Method And Apparatus For Coupling Optical Elements To Optoelectronic Devices For Manufacturing Optical Transceiver Modules

DOEpatents

Anderson, Gene R.; Armendariz, Marcelino G.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; Giunta, Rachel Knudsen; Mitchell, Robert T.; McCormick, Frederick B.; Peterson, David W.; Rising, Merideth A.; Reber, Cathleen A.; Reysen, Bill H.

2005-06-14

A process is provided for aligning and connecting at least one optical fiber to at least one optoelectronic device so as to couple light between at least one optical fiber and at least one optoelectronic device. One embodiment of this process comprises the following steps: (1) holding at least one optical element close to at least one optoelectronic device, at least one optical element having at least a first end; (2) aligning at least one optical element with at least one optoelectronic device; (3) depositing a first non-opaque material on a first end of at least one optoelectronic device; and (4) bringing the first end of at least one optical element proximate to the first end of at least one optoelectronic device in such a manner that the first non-opaque material contacts the first end of at least one optoelectronic device and the first end of at least one optical element. The optical element may be an optical fiber, and the optoelectronic device may be a vertical cavity surface emitting laser. The first non-opaque material may be a UV optical adhesive that provides an optical path and mechanical stability. In another embodiment of the alignment process, the first end of at least one optical element is brought proximate to the first end of at least one optoelectronic device in such a manner that an interstitial space exists between the first end of at least one optoelectronic device and the first end of at least one optical element.

Conjugated polymers and their use in optoelectronic devices

DOEpatents

Marks, Tobin J.; Guo, Xugang; Zhou, Nanjia; Chang, Robert P. H.; Drees, Martin; Facchetti, Antonio

2016-10-18

The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Light-emitting diodes based on colloidal silicon quantum dots

NASA Astrophysics Data System (ADS)

Zhao, Shuangyi; Liu, Xiangkai; Pi, Xiaodong; Yang, Deren

2018-06-01

Colloidal silicon quantum dots (Si QDs) hold great promise for the development of printed Si electronics. Given their novel electronic and optical properties, colloidal Si QDs have been intensively investigated for optoelectronic applications. Among all kinds of optoelectronic devices based on colloidal Si QDs, QD light-emitting diodes (LEDs) play an important role. It is encouraging that the performance of LEDs based on colloidal Si QDs has been significantly increasing in the past decade. In this review, we discuss the effects of the QD size, QD surface and device structure on the performance of colloidal Si-QD LEDs. The outlook on the further optimization of the device performance is presented at the end.

Epidermal Inorganic Optoelectronics for Blood Oxygen Measurement.

PubMed

Li, Haicheng; Xu, Yun; Li, Xiaomin; Chen, Ying; Jiang, Yu; Zhang, Changxing; Lu, Bingwei; Wang, Jian; Ma, Yinji; Chen, Yihao; Huang, Yin; Ding, Minquang; Su, Honghong; Song, Guofeng; Luo, Yi; Feng, X

2017-05-01

Flexible and stretchable optoelectronics, built-in inorganic semiconductor materials, offer a wide range of unprecedented opportunities and will redefine the conventional rigid optoelectronics in biological application and medical measurement. However, a significant bottleneck lies in the brittleness nature of rigid semiconductor materials and the performance's extreme sensitivity to the light intensity variation due to human skin deformation while measuring physical parameters. In this study, the authors demonstrate a systematic strategy to design an epidermal inorganic optoelectronic device by using specific strain-isolation design, nanodiamond thinning, and hybrid transfer printing. The authors propose all-in-one suspension structure to achieve the stretchability and conformability for surrounding environment, and they propose a two-step transfer printing method for hybrid integrating III-V group emitting elements, Si-based photodetector, and interconnects. Owing to the excellent flexibility and stretchability, such device is totally conformal to skin and keeps the constant light transmission between emitting element and photodetector as well as the signal stability due to skin deformation. This method opens a route for traditional inorganic optoelectronics to achieve flexibility and stretchability and improve the performance of optoelectronics for biomedical application. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.

PubMed

Wang, Feng; Wang, Zhenxing; Jiang, Chao; Yin, Lei; Cheng, Ruiqing; Zhan, Xueying; Xu, Kai; Wang, Fengmei; Zhang, Yu; He, Jun

2017-09-01

2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors, holding many novel properties, such as the absence of surface dangling bonds, sizable band gaps, high flexibility, and ability of artificial assembly. With the prospect of bringing revolutionary opportunities for electronic and optoelectronic applications, 2DLSMs have prospered over the past twelve years. From materials preparation and property exploration to device applications, 2DLSMs have been extensively investigated and have achieved great progress. However, there are still great challenges for high-performance devices. In this review, we provide a brief overview on the recent breakthroughs in device optimization based on 2DLSMs, particularly focussing on three aspects: device configurations, basic properties of channel materials, and heterostructures. The effects from device configurations, i.e., electrical contacts, dielectric layers, channel length, and substrates, are discussed. After that, the affect of the basic properties of 2DLSMs on device performance is summarized, including crystal defects, crystal symmetry, doping, and thickness. Finally, we focus on heterostructures based on 2DLSMs. Through this review, we try to provide a guide to improve electronic and optoelectronic devices of 2DLSMs for achieving practical device applications in the future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multi-material optoelectronic fiber devices

NASA Astrophysics Data System (ADS)

Sorin, F.; Yan, Wei; Volpi, Marco; Page, Alexis G.; Nguyen Dang, Tung; Qu, Y.

2017-05-01

The recent ability to integrate materials with different optical and optoelectronic properties in prescribed architectures within flexible fibers is enabling novel opportunities for advanced optical probes, functional surfaces and smart textiles. In particular, the thermal drawing process has known a series of breakthroughs in recent years that have expanded the range of materials and architectures that can be engineered within uniform fibers. Of particular interest in this presentation will be optoelectronic fibers that integrate semiconductors electrically addressed by conducting materials. These long, thin and flexible fibers can intercept optical radiation, localize and inform on a beam direction, detect its wavelength and even harness its energy. They hence constitute ideal candidates for applications such as remote and distributed sensing, large-area optical-detection arrays, energy harvesting and storage, innovative health care solutions, and functional fabrics. To improve performance and device complexity, tremendous progresses have been made in terms of the integrated semiconductor architectures, evolving from large fiber solid-core, to sub-hundred nanometer thin-films, nano-filaments and even nanospheres. To bridge the gap between the optoelectronic fiber concept and practical applications however, we still need to improve device performance and integration. In this presentation we will describe the materials and processing approaches to realize optoelectronic fibers, as well as give a few examples of demonstrated systems for imaging as well as light and chemical sensing. We will then discuss paths towards practical applications focusing on two main points: fiber connectivity, and improving the semiconductor microstructure by developing scalable approaches to make fiber-integrated single-crystal nanowire based devices.

One-dimensional CdS nanostructures: a promising candidate for optoelectronics.

PubMed

Li, Huiqiao; Wang, Xi; Xu, Junqi; Zhang, Qi; Bando, Yoshio; Golberg, Dmitri; Ma, Ying; Zhai, Tianyou

2013-06-11

As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Novel optoelectronic methodology for testing of MOEMS

NASA Astrophysics Data System (ADS)

Pryputniewicz, Ryszard J.; Furlong, Cosme

2003-01-01

Continued demands for delivery of high performance micro-optoelectromechanical systems (MOEMS) place unprecedented requirements on methods used in their development and operation. Metrology is a major and inseparable part of these methods. Optoelectronic methodology is an essential field of metrology. Due to its scalability, optoelectronic methodology is particularly suitable for testing of MOEMS where measurements must be made with ever increasing accuracy and precision. This was particularly evident during the last few years, characterized by miniaturization of devices, when requirements for measurements have rapidly increased as the emerging technologies introduced new products, especially, optical MEMS. In this paper, a novel optoelectronic methodology for testing of MOEMS is described and its applications are illustrated with representative examples. These examples demonstrate capability to measure submicron deformations of various components of the micromirror device, under operating conditions, and show viability of the optoelectronic methodology for testing of MOEMS.

Two-Dimensional Materials for Halide Perovskite-Based Optoelectronic Devices.

PubMed

Chen, Shan; Shi, Gaoquan

2017-06-01

Halide perovskites have high light absorption coefficients, long charge carrier diffusion lengths, intense photoluminescence, and slow rates of non-radiative charge recombination. Thus, they are attractive photoactive materials for developing high-performance optoelectronic devices. These devices are also cheap and easy to be fabricated. To realize the optimal performances of halide perovskite-based optoelectronic devices (HPODs), perovskite photoactive layers should work effectively with other functional materials such as electrodes, interfacial layers and encapsulating films. Conventional two-dimensional (2D) materials are promising candidates for this purpose because of their unique structures and/or interesting optoelectronic properties. Here, we comprehensively summarize the recent advancements in the applications of conventional 2D materials for halide perovskite-based photodetectors, solar cells and light-emitting diodes. The examples of these 2D materials are graphene and its derivatives, mono- and few-layer transition metal dichalcogenides (TMDs), graphdiyne and metal nanosheets, etc. The research related to 2D nanostructured perovskites and 2D Ruddlesden-Popper perovskites as efficient and stable photoactive layers is also outlined. The syntheses, functions and working mechanisms of relevant 2D materials are introduced, and the challenges to achieving practical applications of HPODs using 2D materials are also discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fused thiophene-based conjugated polymers and their use in optoelectronic devices

DOEpatents

Facchetti, Antonio; Marks, Tobin J; Takai, Atsuro; Seger, Mark; Chen, Zhihua

2015-11-03

The present teachings relate to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Device-packaging method and apparatus for optoelectronic circuits

DOEpatents

Zortman, William A.; Henry, Michael David; Jarecki, Jr., Robert L.

2017-04-25

An optoelectronic device package and a method for its fabrication are provided. The device package includes a lid die and an active die that is sealed or sealable to the lid die and in which one or more optical waveguides are integrally defined. The active die includes one or more active device regions, i.e. integral optoelectronic devices or etched cavities for placement of discrete optoelectronic devices. Optical waveguides terminate at active device regions so that they can be coupled to them. Slots are defined in peripheral parts of the active dies. At least some of the slots are aligned with the ends of integral optical waveguides so that optical fibers or optoelectronic devices inserted in the slots can optically couple to the waveguides.

Correlating Microstructure and Optoelectronic Performance of Carbon-Based Nanomaterials

NASA Astrophysics Data System (ADS)

Rochford, Caitlin

There is a great deal of interest in carbon nanostructures such as graphene and various forms of carbon nanotubes due to their exceptional physical, electronic, and optical properties. Many technological applications have been proposed for these nanostructures, but despite the promise many carbon nanostructure-based optoelectronic devices fail to compete with their conventional counterparts. This is often due in large part to a non-optimized material or device microstructure. Factors such as crystallinity, contact quality, defect structure, and device configuration can critically affect device performance due to the high sensitivity and extreme surface to volume ratio of carbon nanostructures. In order for the exceptional intrinsic properties of the nanostructures to be exploited, a clear understanding of the microstructure and its correlation with device-relevant optoelectronic properties is needed. This dissertation presents four projects which demonstrate this principle. First, a TiO 2-coated carbon nanofiber is studied in order to optimize its structure for use in a novel dye-sensitized solar cell. Second, the electrode configuration of an individual multiwall carbon nanotube infrared sensor is investigated in order to surpass the limitations of disordered nanotube film-based infrared sensors. Third, the properties of defect structures in large area transferred graphene films grown by chemical vapor deposition are correlated with carrier diffusion in order to understand the film's low mobility compared to exfoliated graphene. Fourth, the effect of deposition conditions on graphene-metal contact was studied with the goal of achieving sufficiently transparent contacts for investigation of the superconducting proximity effect. All four projects highlight the unique properties of carbon nanostructures as well as the need to correlate their optoelectronic properties with microstructural details in order to achieve the desired device performance.

Amino-functionalized sub-40 nm ultrathin Ag/ZnO transparent electrodes for flexible polymer dispersed liquid crystal devices

NASA Astrophysics Data System (ADS)

Huang, Jinhua; Lu, Yuehui; Wu, Wenxuan; Li, Jia; Zhang, Xianpeng; Zhu, Chaoting; Yang, Ye; Xu, Feng; Song, Weijie

2017-11-01

Various flexible transparent conducting electrodes (FTCEs) have been studied for promising applications in flexible optoelectronic devices, but there are still challenges in achieving higher transparency and conductivity, lower thickness, better mechanical flexibility, and lower preparation temperatures. In this work, we prepared a sub-40 nm Ag(9 nm)/ZnO(30 nm) FTCE at room temperature, where each layer played a relatively independent role in the tailoring of the optoelectronic properties. A continuous and smooth 9-nm Ag thin film was grown on amino-functionalized glass and polyethylene terephthalate (PET) substrates to provide good conductivity. A 30-nm ZnO cladding, as an antireflection layer, further improved the transmittance while hardly affecting the conductivity. The room-temperature grown sub-40 nm Ag/ZnO thin films on PET substrate exhibited a transmittance of 88.6% at 550 nm and a sheet resistance of 7.6 Ω.sq-1, which were superior to those of the commercial ITO. The facile preparation benefits the integration of FTCEs into various flexible optoelectronic devices, where the excellent performance of the sub-40 nm Ag/ZnO FTCEs in a flexible polymer dispersed liquid crystal device was demonstrated. Sub-40 nm Ag/ZnO FTCEs that have the characteristics of simple structure, room-temperature preparation, and easily tailored optoelectronic properties would provide flexible optoelectronic devices with more degrees of freedom.

Optoelectronically probing the density of nanowire surface trap states to the single state limit

NASA Astrophysics Data System (ADS)

Dan, Yaping

2015-02-01

Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 109 cm-2/eV at deep levels to 1012 cm-2/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

Single-sided lateral-field and phototransistor-based optoelectronic tweezers

NASA Technical Reports Server (NTRS)

Ohta, Aaron (Inventor); Chiou, Pei-Yu (Inventor); Hsu, Hsan-Yin (Inventor); Jamshidi, Arash (Inventor); Wu, Ming-Chiang (Inventor); Neale, Steven L. (Inventor)

2011-01-01

Described herein are single-sided lateral-field optoelectronic tweezers (LOET) devices which use photosensitive electrode arrays to create optically-induced dielectrophoretic forces in an electric field that is parallel to the plane of the device. In addition, phototransistor-based optoelectronic tweezers (PhOET) devices are described that allow for optoelectronic tweezers (OET) operation in high-conductivity physiological buffer and cell culture media.

Optoelectronic Devices and Materials

NASA Astrophysics Data System (ADS)

Sweeney, Stephen; Adams, Alfred

Unlike the majority of electronic devices, which are silicon based, optoelectronic devices are predominantly made using III-V semiconductor compounds such as GaAs, InP, GaN and GaSb and their alloys due to their direct band gap. Understanding the properties of these materials has been of vital importance in the development of optoelectronic devices. Since the first demonstration of a semiconductor laser in the early 1960s, optoelectronic devices have been produced in their millions, pervading our everyday lives in communications, computing, entertainment, lighting and medicine. It is perhaps their use in optical-fibre communications that has had the greatest impact on humankind, enabling high-quality and inexpensive voice and data transmission across the globe. Optical communications spawned a number of developments in optoelectronics, leading to devices such as vertical-cavity surface-emitting lasers, semiconductor optical amplifiers, optical modulators and avalanche photodiodes. In this chapter we discuss the underlying theory of operation of the most important optoelectronic devices. The influence of carrier-photon interactions is discussed in the context of producing efficient emitters and detectors. Finally we discuss how the semiconductor band structure can be manipulated to enhance device properties using quantum confinement and strain effects, and how the addition of dilute amounts of elements such as nitrogen is having a profound effect on the next generation of optoelectronic devices.

Attenuator And Conditioner

DOEpatents

Anderson, Gene R.; Armendariz, Marcelino G.; Carson, Richard F.; Bryan, Robert P.; Duckett, III, Edwin B.; Kemme, Shanalyn Adair; McCormick, Frederick B.; Peterson, David W.

2006-04-04

An apparatus and method of attenuating and/or conditioning optical energy for an optical transmitter, receiver or transceiver module is disclosed. An apparatus for attenuating the optical output of an optoelectronic connector including: a mounting surface; an array of optoelectronic devices having at least a first end; an array of optical elements having at least a first end; the first end of the array of optical elements optically aligned with the first end of the array of optoelectronic devices; an optical path extending from the first end of the array of optoelectronic devices and ending at a second end of the array of optical elements; and an attenuator in the optical path for attenuating the optical energy emitted from the array of optoelectronic devices. Alternatively, a conditioner may be adapted in the optical path for conditioning the optical energy emitted from the array of optoelectronic devices.

Recent progress in high-mobility thin-film transistors based on multilayer 2D materials

NASA Astrophysics Data System (ADS)

Hong, Young Ki; Liu, Na; Yin, Demin; Hong, Seongin; Kim, Dong Hak; Kim, Sunkook; Choi, Woong; Yoon, Youngki

2017-04-01

Two-dimensional (2D) layered semiconductors are emerging as promising candidates for next-generation thin-film electronics because of their high mobility, relatively large bandgap, low-power switching, and the availability of large-area growth methods. Thin-film transistors (TFTs) based on multilayer transition metal dichalcogenides or black phosphorus offer unique opportunities for next-generation electronic and optoelectronic devices. Here, we review recent progress in high-mobility transistors based on multilayer 2D semiconductors. We describe the theoretical background on characterizing methods of TFT performance and material properties, followed by their applications in flexible, transparent, and optoelectronic devices. Finally, we highlight some of the methods used in metal-semiconductor contacts, hybrid structures, heterostructures, and chemical doping to improve device performance.

Engineering highly organized and aligned single walled carbon nanotube networks for electronic device applications: Interconnects, chemical sensor, and optoelectronics

NASA Astrophysics Data System (ADS)

Kim, Young Lae

For 20 years, single walled carbon nanotubes (SWNTs) have been studied actively due to their unique one-dimensional nanostructure and superior electrical, thermal, and mechanical properties. For these reasons, they offer the potential to serve as building blocks for future electronic devices such as field effect transistors (FETs), electromechanical devices, and various sensors. In order to realize these applications, it is crucial to develop a simple, scalable, and reliable nanomanufacturing process that controllably places aligned SWNTs in desired locations, orientations, and dimensions. Also electronic properties (semiconducting/metallic) of SWNTs and their organized networks must be controlled for the desired performance of devices and systems. These fundamental challenges are significantly limiting the use of SWNTs for future electronic device applications. Here, we demonstrate a strategy to fabricate highly controlled micro/nanoscale SWNT network structures and present the related assembly mechanism to engineer the SWNT network topology and its electrical transport properties. A method designed to evaluate the electrical reliability of such nano- and microscale SWNT networks is also presented. Moreover, we develop and investigate a robust SWNT based multifunctional selective chemical sensor and a range of multifunctional optoelectronic switches, photo-transistors, optoelectronic logic gates and complex optoelectronic digital circuits.

Improved interface control for high-performance graphene-based organic solar cells

NASA Astrophysics Data System (ADS)

Jung, Seungon; Lee, Junghyun; Choi, Yunseong; Myeon Lee, Sang; Yang, Changduk; Park, Hyesung

2017-12-01

The demand for high-efficiency flexible optoelectronic devices is ever-increasing because next-generation electronic devices that comprise portable or wearable electronic systems are set to play an important role. Graphene has received extensive attention as it is considered to be a promising candidate material for transparent flexible electrode platforms owing to its outstanding electrical, optical, and physical properties. Despite these properties, the inert and hydrophobic nature of graphene surfaces renders it difficult to use in optoelectronic devices. In particular, commonly used charge transporting layer (CTL) materials for organic solar cells (OSCs) cannot uniformly coat a graphene surface, which leads to such devices failing. Herein, this paper proposes an approach that will enable CTL materials to completely cover a graphene electrode; this is done with the assistance of commonly accessible polar solvents. These are successfully applied to various configurations of OSCs, with power conversion efficiencies of 8.17% for graphene electrode-based c-OSCs (OSCs with conventional structures), 8.38% for i-OSCs (OSCs with inverted structures), and 7.53% for flexible solar cells. The proposed approach is expected to bring about significant advances for efficiency enhancements in graphene-based optoelectronic devices, and it is expected that it will open up new possibilities for flexible optoelectronic systems.

Solution growth of single crystal methylammonium lead halide perovskite nanostructures for optoelectronic and photovoltaic applications.

PubMed

Fu, Yongping; Meng, Fei; Rowley, Matthew B; Thompson, Blaise J; Shearer, Melinda J; Ma, Dewei; Hamers, Robert J; Wright, John C; Jin, Song

2015-05-06

Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic-inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid-liquid interfacial conversion reaction can create a highly crystalline, nanostructured MAPbI3 film with micrometer grain size and high surface coverage that enables photovoltaic devices with a power conversion efficiency of 10.6%. These results suggest that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.

The Electrical and Optical Properties of Organometal Halide Perovskites Relevant to Optoelectronic Performance.

PubMed

Adinolfi, Valerio; Peng, Wei; Walters, Grant; Bakr, Osman M; Sargent, Edward H

2018-01-01

Organometal halide perovskites are under intense study for use in optoelectronics. Methylammonium and formamidinium lead iodide show impressive performance as photovoltaic materials; a premise that has spurred investigations into light-emitting devices and photodetectors. Herein, the optical and electrical material properties of organometal halide perovskites are reviewed. An overview is given on how the material composition and morphology are tied to these properties, and how these properties ultimately affect device performance. Material attributes and techniques used to estimate them are analyzed for different perovskite materials, with a particular focus on the bandgap, mobility, diffusion length, carrier lifetime, and trap-state density. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photonics

NASA Technical Reports Server (NTRS)

1991-01-01

Optoelectronic materials and devices are examined. Optoelectronic devices, which generate, detect, modulate, or switch electromagnetic radiation are being developed for a variety of space applications. The program includes spatial light modulators, solid state lasers, optoelectronic integrated circuits, nonlinear optical materials and devices, fiber optics, and optical networking photovoltaic technology and optical processing.

Direct Photolithography on Molecular Crystals for High Performance Organic Optoelectronic Devices.

PubMed

Yao, Yifan; Zhang, Lei; Leydecker, Tim; Samorì, Paolo

2018-05-23

Organic crystals are generated via the bottom-up self-assembly of molecular building blocks which are held together through weak noncovalent interactions. Although they revealed extraordinary charge transport characteristics, their labile nature represents a major drawback toward their integration in optoelectronic devices when the use of sophisticated patterning techniques is required. Here we have devised a radically new method to enable the use of photolithography directly on molecular crystals, with a spatial resolution below 300 nm, thereby allowing the precise wiring up of multiple crystals on demand. Two archetypal organic crystals, i.e., p-type 2,7-diphenyl[1]benzothieno[3,2- b][1]benzothiophene (Dph-BTBT) nanoflakes and n-type N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) nanowires, have been exploited as active materials to realize high-performance top-contact organic field-effect transistors (OFETs), inverter and p-n heterojunction photovoltaic devices supported on plastic substrate. The compatibility of our direct photolithography technique with organic molecular crystals is key for exploiting the full potential of organic electronics for sophisticated large-area devices and logic circuitries, thus paving the way toward novel applications in plastic (opto)electronics.

GaAs MOEMS Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.

2003-03-01

Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vitalmore » step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.« less

Compendium of Current Total Ionizing Dose and Displacement Damage Results from NASA GSFC and NEPP

NASA Technical Reports Server (NTRS)

Topper, Alyson D.; Campola, Michael J.; Chen, Dakai; Casey, Megan C.; Yau, Ka-Yen; Label, Kenneth A.; Cochran, Donna J.; O'Bryan, Martha V.

2017-01-01

Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include opto-electronics, digital, analog, linear bipolar devices, and hybrid devices.

A Flexible and Thin Graphene/Silver Nanowires/Polymer Hybrid Transparent Electrode for Optoelectronic Devices.

PubMed

Dong, Hua; Wu, Zhaoxin; Jiang, Yaqiu; Liu, Weihua; Li, Xin; Jiao, Bo; Abbas, Waseem; Hou, Xun

2016-11-16

A typical thin and fully flexible hybrid electrode was developed by integrating the encapsulation of silver nanowires (AgNWs) network between a monolayer graphene and polymer film as a sandwich structure. Compared with the reported flexible electrodes based on PET or PEN substrate, this unique electrode exhibits the superior optoelectronic characteristics (sheet resistance of 8.06 Ω/□ at 88.3% light transmittance). Meanwhile, the specific up-to-bottom fabrication process could achieve the superflat surface (RMS = 2.58 nm), superthin thickness (∼8 μm thickness), high mechanical robustness, and lightweight. In addition, the strong corrosion resistance and stability for the hybrid electrode were proved. With these advantages, we employ this electrode to fabricate the simple flexible organic light-emitting device (OLED) and perovskite solar cell device (PSC), which exhibit the considerable performance (best PCE of OLED = 2.11 cd/A 2 ; best PCE of PSC = 10.419%). All the characteristics of the unique hybrid electrode demonstrate its potential as a high-performance transparent electrode candidate for flexible optoelectronics.

Spatially Resolved Photoexcited Charge-Carrier Dynamics in Phase-Engineered Monolayer MoS 2

DOE PAGES

Yamaguchi, Hisato; Blancon, Jean-Christophe; Kappera, Rajesh; ...

2014-12-18

A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. We investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS 2) under photo-excitation using correlated scanning photocurrent microscopy and photoluminescence imaging. We examined the effect of local phase transformation underneath the metal electrodes on the generation of photocurrent across the channel length with diffraction-limited spatial resolution. While maximum photocurrent generation occurs at the Schottky contacts of semiconducting (2H-phase) MoS 2, after the metallic phase transformation (1T-phase), the photocurrent peak ismore » observed towards the center of the device channel, suggesting a strong reduction of native Schottky barriers. Analysis using the bias and position dependence of the photocurrent indicates that the Schottky barrier heights are few meV for 1T- and ~200 meV for 2H-contacted devices. We also demonstrate that a reduction of native Schottky barriers in a 1T device enhances the photo responsivity by more than one order of magnitude, a crucial parameter in achieving high performance optoelectronic devices. The obtained results pave a pathway for the fundamental understanding of intrinsic optoelectronic properties of atomically thin TMDs where Ohmic contacts are necessary for achieving high efficiency devices with low power consumption.« less

Multifunctional graphene optoelectronic devices capable of detecting and storing photonic signals.

PubMed

Jang, Sukjae; Hwang, Euyheon; Lee, Youngbin; Lee, Seungwoo; Cho, Jeong Ho

2015-04-08

The advantages of graphene photodetectors were utilized to design a new multifunctional graphene optoelectronic device. Organic semiconductors, gold nanoparticles (AuNPs), and graphene were combined to fabricate a photodetecting device with a nonvolatile memory function for storing photonic signals. A pentacene organic semiconductor acted as a light absorption layer in the device and provided a high hole photocurrent to the graphene channel. The AuNPs, positioned between the tunneling and blocking dielectric layers, acted as both a charge trap layer and a plasmonic light scatterer, which enable storing of the information about the incident light. The proposed pentacene-graphene-AuNP hybrid photodetector not only performed well as a photodetector in the visible light range, it also was able to store the photonic signal in the form of persistent current. The good photodetection performance resulted from the plasmonics-enabled enhancement of the optical absorption and from the photogating mechanisms in the pentacene. The device provided a photoresponse that depended on the wavelength of incident light; therefore, the signal information (both the wavelength and intensity) of the incident light was effectively committed to memory. The simple process of applying a negative pulse gate voltage could then erase the programmed information. The proposed photodetector with the capacity to store a photonic signal in memory represents a significant step toward the use of graphene in optoelectronic devices.

Two-dimensional crystals: managing light for optoelectronics.

PubMed

Eda, Goki; Maier, Stefan A

2013-07-23

Semiconducting two-dimensional (2D) crystals such as MoS2 and WSe2 exhibit unusual optical properties that can be exploited for novel optoelectronics ranging from flexible photovoltaic cells to harmonic generation and electro-optical modulation devices. Rapid progress of the field, particularly in the growth area, is beginning to enable ways to implement 2D crystals into devices with tailored functionalities. For practical device performance, a key challenge is to maximize light-matter interactions in the material, which is inherently weak due to its atomically thin nature. Light management around the 2D layers with the use of plasmonic nanostructures can provide a compelling solution.

Research Update: Emerging chalcostibite absorbers for thin-film solar cells

DOE PAGES

de Souza Lucas, Francisco Willian; Zakutayev, Andriy

2018-06-04

Copper antimony chalcogenides CuSbCh 2 (Ch=S, Se) are an emerging family of absorbers studied for thin-film solar cells. These non-toxic and Earth-abundant materials show a layered low-dimensional chalcostibite crystal structure, leading to interesting optoelectronic properties for applications in photovoltaic (PV) devices. This research update describes the CuSbCh 2 crystallographic structures, synthesis methods, competing phases, band structures, optoelectronic properties, point defects, carrier dynamics, and interface band offsets, based on experimental and theoretical data. Correlations between these absorber properties and PV device performance are discussed, and opportunities for further increase in the efficiency of the chalcostibite PV devices are highlighted.

Research Update: Emerging chalcostibite absorbers for thin-film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

de Souza Lucas, Francisco Willian; Zakutayev, Andriy

Copper antimony chalcogenides CuSbCh 2 (Ch=S, Se) are an emerging family of absorbers studied for thin-film solar cells. These non-toxic and Earth-abundant materials show a layered low-dimensional chalcostibite crystal structure, leading to interesting optoelectronic properties for applications in photovoltaic (PV) devices. This research update describes the CuSbCh 2 crystallographic structures, synthesis methods, competing phases, band structures, optoelectronic properties, point defects, carrier dynamics, and interface band offsets, based on experimental and theoretical data. Correlations between these absorber properties and PV device performance are discussed, and opportunities for further increase in the efficiency of the chalcostibite PV devices are highlighted.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Recent Advances in Biointegrated Optoelectronic Devices.

PubMed

Xu, Huihua; Yin, Lan; Liu, Chuan; Sheng, Xing; Zhao, Ni

2018-05-28

With recent progress in the design of materials and mechanics, opportunities have arisen to improve optoelectronic devices, circuits, and systems in curved, flexible, stretchable, and biocompatible formats, thereby enabling integration of customized optoelectronic devices and biological systems. Here, the core material technologies of biointegrated optoelectronic platforms are discussed. An overview of the design and fabrication methods to form semiconductor materials and devices in flexible and stretchable formats is presented, strategies incorporating various heterogeneous substrates, interfaces, and encapsulants are discussed, and their applications in biomimetic, wearable, and implantable systems are highlighted. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible transparent conducting hybrid film using a surface-embedded copper nanowire network: a highly oxidation-resistant copper nanowire electrode for flexible optoelectronics.

PubMed

Im, Hyeon-Gyun; Jung, Soo-Ho; Jin, Jungho; Lee, Dasom; Lee, Jaemin; Lee, Daewon; Lee, Jung-Yong; Kim, Il-Doo; Bae, Byeong-Soo

2014-10-28

We report a flexible high-performance conducting film using an embedded copper nanowire transparent conducting electrode; this material can be used as a transparent electrode platform for typical flexible optoelectronic devices. The monolithic composite structure of our transparent conducting film enables simultaneously an outstanding oxidation stability of the copper nanowire network (14 d at 80 °C), an exceptionally smooth surface topography (R(rms) < 2 nm), and an excellent opto-electrical performances (Rsh = 25 Ω sq(-1) and T = 82%). A flexible organic light emitting diode device is fabricated on the transparent conducting film to demonstrate its potential as a flexible copper nanowire electrode platform.

Compendium of Current Total Ionizing Dose and Displacement Damage Results from NASA Goddard Space Flight Center and Selected NASA Electronic Parts and Packaging Program

NASA Technical Reports Server (NTRS)

Topper, Alyson D.; Campola, Michael J.; Chen, Dakai; Casey, Megan C.; Yau, Ka-Yen; Cochran, Donna J.; LaBel, Kenneth A.; Ladbury, Raymond L.; Lauenstein, Jean-Marie; Mondy, Timothy K.;

Flexion bonding transfer of multilayered graphene as a top electrode in transparent organic light-emitting diodes

PubMed Central

Tae Lim, Jong; Lee, Hyunkoo; Cho, Hyunsu; Kwon, Byoung-Hwa; Sung Cho, Nam; Kuk Lee, Bong; Park, Jonghyurk; Kim, Jaesu; Han, Jun-Han; Yang, Jong-Heon; Yu, Byoung-Gon; Hwang, Chi-Sun; Chu Lim, Seong; Lee, Jeong-Ik

2015-01-01

Graphene has attracted considerable attention as a next-generation transparent conducting electrode, because of its high electrical conductivity and optical transparency. Various optoelectronic devices comprising graphene as a bottom electrode, such as organic light-emitting diodes (OLEDs), organic photovoltaics, quantum-dot LEDs, and light-emitting electrochemical cells, have recently been reported. However, performance of optoelectronic devices using graphene as top electrodes is limited, because the lamination process through which graphene is positioned as the top layer of these conventional OLEDs is a lack of control in the surface roughness, the gapless contact, and the flexion bonding between graphene and organic layer of the device. Here, a multilayered graphene (MLG) as a top electrode is successfully implanted, via dry bonding, onto the top organic layer of transparent OLED (TOLED) with flexion patterns. The performance of the TOLED with MLG electrode is comparable to that of a conventional TOLED with a semi-transparent thin-Ag top electrode, because the MLG electrode makes a contact with the TOLED with no residue. In addition, we successfully fabricate a large-size transparent segment panel using the developed MLG electrode. Therefore, we believe that the flexion bonding technology presented in this work is applicable to various optoelectronic devices. PMID:26626439

Electrostatically tunable lateral MoTe2 p-n junction for use in high-performance optoelectronics.

PubMed

Wang, Zhenxing; Wang, Feng; Yin, Lei; Huang, Yun; Xu, Kai; Wang, Fengmei; Zhan, Xueying; He, Jun

2016-07-21

Because of their ultimate thickness, layered structure and high flexibility, pn junctions based on layered two-dimensional semiconductors have been attracting increasing attention recently. In this study, for the first time, we fabricated lateral pn junctions (LPNJs) based on ultrathin MoTe2 by introducing two separated electrostatic back gates, and investigated their electronic and photovoltaic performance. Pn, np, nn, and pp junctions can be easily realized by modulating the conductive channel type using gate voltages with different polarities. Strong rectification effects were observed in the pn and np junctions and the rectification ratio reached ∼5 × 10(4). Importantly, we find a unique phenomenon that the parameters for MoTe2 LPNJs experience abrupt changes during the transition from p to n or n to p. Furthermore, a high performance photovoltaic device with a filling factor of above 51% and electrical conversion efficiency (η) of around 0.5% is achieved. Our findings are of importance to comprehensively understand the electronic and optoelectronic properties of MoTe2 and may further open up novel electronic and optoelectronic device applications.

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.

PubMed

Gong, Chuanhui; Zhang, Yuxi; Chen, Wei; Chu, Junwei; Lei, Tianyu; Pu, Junru; Dai, Liping; Wu, Chunyang; Cheng, Yuhua; Zhai, Tianyou; Li, Liang; Xiong, Jie

2017-12-01

With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high-performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe 2 and ReX 2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low-symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field-effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high-performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

Strain-engineered optoelectronic properties of 2D transition metal dichalcogenide lateral heterostructures

DOE PAGES

Lee, Jaekwang; Huang, Jingsong; Sumpter, Bobby G.; ...

2017-02-17

Compared with their bulk counterparts, 2D materials can sustain much higher elastic strain at which optical quantities such as bandgaps and absorption spectra governing optoelectronic device performance can be modified with relative ease. Using first-principles density functional theory and quasiparticle GW calculations, we demonstrate how uniaxial tensile strain can be utilized to optimize the electronic and optical properties of transition metal dichalcogenide lateral (in-plane) heterostructures such as MoX 2/WX 2 (X = S, Se, Te). We find that these lateral-type heterostructures may facilitate efficient electron–hole separation for light detection/harvesting and preserve their type II characteristic up to 12% of uniaxialmore » strain. Based on the strain-dependent bandgap and band offset, we show that uniaxial tensile strain can significantly increase the power conversion efficiency of these lateral heterostructures. Our results suggest that these strain-engineered lateral heterostructures are promising for optimizing optoelectronic device performance by selectively tuning the energetics of the bandgap.« less

RIR-MAPLE deposition of conjugated polymers and hybrid nanocomposites for application to optoelectronic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stiff-Roberts, Adrienne D.; Pate, Ryan; McCormick, Ryan

2012-07-30

Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) is a variation of pulsed laser deposition that is useful for organic-based thin films because it reduces material degradation by selective absorption of infrared radiation in the host matrix. A unique emulsion-based RIR-MAPLE approach has been developed that reduces substrate exposure to solvents and provides controlled and repeatable organic thin film deposition. In order to establish emulsion-based RIR-MAPLE as a preferred deposition technique for conjugated polymer or hybrid nanocomposite optoelectronic devices, studies have been conducted to demonstrate the value added by the approach in comparison to traditional solution-based deposition techniques, and this workmore » will be reviewed. The control of hybrid nanocomposite thin film deposition, and the photoconductivity in such materials deposited using emulsion-based RIR-MAPLE, will also be reviewed. The overall result of these studies is the demonstration of emulsion-based RIR-MAPLE as a viable option for the fabrication of conjugated polymer and hybrid nanocomposite optoelectronic devices that could yield improved device performance.« less

Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

NASA Technical Reports Server (NTRS)

Richard, M. A.; Claspy, P. C.; Bhasin, K. B.; Bendett, M. B.

1990-01-01

Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs monolithic microwave integrated circuit (MMIC) based phased array antennas. The performance of a hybrid GaAs optoelectronic integrated circuit (OEIC) is described, as well as its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 30b Mbps. The performance characteristics and potential applications of the device are presented.

Methods and devices for fabricating and assembling printable semiconductor elements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Methods and devices for fabricating and assembling printable semiconductor elements

DOEpatents

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2014-03-04

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Optoelectronic device with nanoparticle embedded hole injection/transport layer

DOEpatents

Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

2012-01-03

An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

Radiation Effects on Optoelectronic Devices in Space Missions

NASA Technical Reports Server (NTRS)

Johnston, Allan H.

2006-01-01

Radiation degradation of optoelectronic devices is discussed, including effects on optical emitters, detectors and optocouplers. The importance of displacement damage is emphasized, including the limitations of non-ionizing energy loss (NIEL) in normalizing damage. Failures of optoelectronics in fielded space systems are discussed, along with testing and qualification methods.

Small Molecule Organic Optoelectronic Devices

NASA Astrophysics Data System (ADS)

Bakken, Nathan

Organic optoelectronics include a class of devices synthesized from carbon containing 'small molecule' thin films without long range order crystalline or polymer structure. Novel properties such as low modulus and flexibility as well as excellent device performance such as photon emission approaching 100% internal quantum efficiency have accelerated research in this area substantially. While optoelectronic organic light emitting devices have already realized commercial application, challenges to obtain extended lifetime for the high energy visible spectrum and the ability to reproduce natural white light with a simple architecture have limited the value of this technology for some display and lighting applications. In this research, novel materials discovered from a systematic analysis of empirical device data are shown to produce high quality white light through combination of monomer and excimer emission from a single molecule: platinum(II) bis(methyl-imidazolyl)toluene chloride (Pt-17). Illumination quality achieved Commission Internationale de L'Eclairage (CIE) chromaticity coordinates (x = 0.31, y = 0.38) and color rendering index (CRI) > 75. Further optimization of a device containing Pt-17 resulted in a maximum forward viewing power efficiency of 37.8 lm/W on a plain glass substrate. In addition, accelerated aging tests suggest high energy blue emission from a halogen-free cyclometalated platinum complex could demonstrate degradation rates comparable to known stable emitters. Finally, a buckling based metrology is applied to characterize the mechanical properties of small molecule organic thin films towards understanding the deposition kinetics responsible for an elastic modulus that is both temperature and thickness dependent. These results could contribute to the viability of organic electronic technology in potentially flexible display and lighting applications. The results also provide insight to organic film growth kinetics responsible for optical, mechanical, and water uptake properties relevant to engineering the next generation of optoelectronic devices.

Synthesis, structure, and optoelectronic properties of II-IV-V 2 materials

DOE PAGES

Martinez, Aaron D.; Fioretti, Angela N.; Toberer, Eric S.; ...

2017-03-07

II-IV-V 2 materials offer the promise of enhanced functionality in optoelectronic devices due to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic devices based on nitride, phosphide, and arsenide II-IV-V 2 materials. As ternary analogs to the III-V materials, these compounds share many of the attractive features that have made the III-Vs the basis of modern optoelectronic devices (e.g. high mobility, strong optical absorption). Control of cation order parameter in the II-IV-V 2 materials can produce significant changes in optoelectronic properties at fixed chemical composition, including decoupling band gap from lattice parameter. Recent progressmore » has begun to resolve outstanding questions concerning the structure, dopability, and optical properties of the II-IV-V 2 materials. Furthermore, remaining research challenges include growth optimization and integration into heterostructures and devices.« less

Optoelectronic Devices with Complex Failure Modes

NASA Technical Reports Server (NTRS)

Johnston, A.

2000-01-01

This part of the NSREC-2000 Short Course discusses radiation effects in basic photonic devices along with effects in more complex optoelectronic devices where the overall radiation response depends on several factors, with the possibility of multiple failure modes.

Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors

PubMed Central

Cao, Yufei; Cai, Kaiming; Hu, Pingan; Zhao, Lixia; Yan, Tengfei; Luo, Wengang; Zhang, Xinhui; Wu, Xiaoguang; Wang, Kaiyou; Zheng, Houzhi

2015-01-01

A critical challenge for the integration of optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. Generally, a large electrodes spacing in photodetectors is required to absorb sufficient light to maintain high photoresponsivity and reduce the dark current. However, this will limit the optoelectronic integration density. Through spatially resolved photocurrent investigation, we find that the photocurrent in metal-semiconductor-metal (MSM) photodetectors based on layered GaSe is mainly generated from the region close to the metal-GaSe interface with higher electrical potential. The photoresponsivity monotonically increases with shrinking the spacing distance before the direct tunneling happens, which was significantly enhanced up to 5,000 AW−1 for the bottom Ti/Au contacted device. It is more than 1,700-fold improvement over the previously reported results. The response time of the Ti/Au contacted devices is about 10–20 ms and reduced down to 270 μs for the devices with single layer graphene as metallic electrodes. A theoretical model has been developed to well explain the photoresponsivity for these two types of device configurations. Our findings realize reducing the size and improving the performance of 2D semiconductor based MSM photodetectors simultaneously, which could pave the way for future high density integration of optoelectronics with high performances. PMID:25632886

Securing Information with Complex Optical Encryption Networks

DTIC Science & Technology

2015-08-11

Network Security, Network Vulnerability , Multi-dimentional Processing, optoelectronic devices 16. SECURITY CLASSIFICATION OF: 17. LIMITATION... optoelectronic devices and systems should be analyzed before the retrieval, any hostile hacker will need to possess multi-disciplinary scientific...sophisticated optoelectronic principles and systems where he/she needs to process the information. However, in the military applications, most military

Robust broad spectral photodetection (UV-NIR) and ultra high responsivity investigated in nanosheets and nanowires of Bi2Te3 under harsh nano-milling conditions.

PubMed

Sharma, Alka; Srivastava, A K; Senguttuvan, T D; Husale, Sudhir

2017-12-20

Due to miniaturization of device dimensions, the next generation's photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic properties of nanodevices fabricated from new novel materials and testing their performances at harsh conditions. The recent advances on 2D layered materials indicate exciting progress on broad spectral photodetection (BSP) but still there is a great demand for fabricating ultra-high performance photodetectors made from single material sensing broad electromagnetic spectrum since the detection range 325 nm-1550 nm is not covered by the conventional Si or InGaAs photodetectors. Alternatively, Bi 2 Te 3 is a layered material, possesses exciting optoelectronic, thermoelectric, plasmonics properties. Here we report robust photoconductivity measurements on Bi 2 Te 3 nanosheets and nanowires demonstrating BSP from UV to NIR. The nanosheets of Bi 2 Te 3 show the best ultra-high photoresponsivity (~74 A/W at 1550 nm). Further these nanosheets when transform into nanowires using harsh FIB milling conditions exhibit about one order enhancement in the photoresponsivity without affecting the performance of the device even after 4 months of storage at ambient conditions. An ultra-high photoresponsivity and BSP indicate exciting robust nature of topological insulator based nanodevices for optoelectronic applications.

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

PubMed Central

Gong, Chuanhui; Zhang, Yuxi; Chen, Wei; Lei, Tianyu; Pu, Junru; Dai, Liping; Wu, Chunyang; Li, Liang

2017-01-01

Abstract With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed. PMID:29270337

New class of optoelectronic oscillators (OEO) for microwave signal generation and processing

NASA Astrophysics Data System (ADS)

Maleki, Lute; Yao, X. S.

1996-11-01

A new class of oscillators based on photonic devices is presented. These opto-electronic oscillators (OEO's) generate microwave oscillation by converting continuous energy from a light source using a feedback circuit which includes a delay element, an electro-optic switch, and a photodetector. Different configurations of OEO's are presented, each of which may be applied to a particular application requiring ultra-high performance, or low cost and small size.

Recent advances in flexible and wearable organic optoelectronic devices

NASA Astrophysics Data System (ADS)

Zhu, Hong; Shen, Yang; Li, Yanqing; Tang, Jianxin

2018-01-01

Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed. Project supported by the Ministry of Science and Technology of China (No. 2016YFB0400700).

Organic photosensitive devices

DOEpatents

Rand, Barry P; Forrest, Stephen R

2013-11-26

The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.

Spontaneous and Selective Nanowelding of Silver Nanowires by Electrochemical Ostwald Ripening and High Electrostatic Potential at the Junctions for High-Performance Stretchable Transparent Electrodes.

PubMed

Lee, Hyo-Ju; Oh, Semi; Cho, Ki-Yeop; Jeong, Woo-Lim; Lee, Dong-Seon; Park, Seong-Ju

2018-04-25

Metal nanowires have been gaining increasing attention as the most promising stretchable transparent electrodes for emerging field of stretchable optoelectronic devices. Nanowelding technology is a major challenge in the fabrication of metal nanowire networks because the optoelectronic performances of metal nanowire networks are mostly limited by the high junction resistance between nanowires. We demonstrate the spontaneous and selective welding of Ag nanowires (AgNWs) by Ag solders via an electrochemical Ostwald ripening process and high electrostatic potential at the junctions of AgNWs. The AgNWs were welded by depositing Ag nanoparticles (AgNPs) on the conducting substrate and then exposing them to water at room temperature. The AgNPs were spontaneously dissolved in water to form Ag + ions, which were then reduced to single-crystal Ag solders selectively at the junctions of the AgNWs. Hence, the welded AgNWs showed higher optoelectronic and stretchable performance compared to that of as-formed AgNWs. These results indicate that electrochemical Ostwald ripening-based welding can be used as a promising method for high-performance metal nanowire electrodes in various next-generation devices such as stretchable solar cells, stretchable displays, organic light-emitting diodes, and skin sensors.

Organic-Inorganic Composites of Semiconductor Nanocrystals for Efficient Excitonics.

PubMed

Guzelturk, Burak; Demir, Hilmi Volkan

2015-06-18

Nanocomposites of colloidal semiconductor nanocrystals integrated into conjugated polymers are the key to soft-material hybrid optoelectronics, combining advantages of both plastics and particles. Synergic combination of the favorable properties in the hybrids of colloidal nanocrystals and conjugated polymers offers enhanced performance and new functionalities in light-generation and light-harvesting applications, where controlling and mastering the excitonic interactions at the nanoscale are essential. In this Perspective, we highlight and critically consider the excitonic interactions in the organic-inorganic nanocomposites to achieve highly efficient exciton transfer through rational design of the nanocomposites. The use of strong excitonic interactions in optoelectronic devices can trigger efficiency breakthroughs in hybrid optoelectronics.

Wafer bonded epitaxial templates for silicon heterostructures

DOEpatents

Atwater, Jr., Harry A.; Zahler, James M [Pasadena, CA; Morral, Anna Fontcubera I [Paris, FR

2008-03-11

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Wafer bonded epitaxial templates for silicon heterostructures

NASA Technical Reports Server (NTRS)

Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)

2008-01-01

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Challenge of Si/SiGe technology to optoelectronics

NASA Astrophysics Data System (ADS)

Chang, C. Y.; Jung, J. G.

1993-01-01

Low temperature epitaxy (LTE) of Si and SiGecanbe performed at a temperature of 550 C or lower. Very promising applications can be opened. Such as high speed/high frequency operations at 90GHZ by constructing heterojunction bipolar transistors. High performance FET'slikepseudomorphic p-channel orn-channel high mobility field effect transistors are presented which canbe composed to perform CMOS operations. Optoelectronic devices such as IRdetectors (1-12um), mutiple quantum well (MOW), disordered superlattice (d-SL) which are the potential candidatesof IR detector and optical sources (e.q. LED, LD etc.) Various physical insights regarding to SiGe heterostructures are presented which includeswave function filter, mass filter as well as band mixing are introduced. Researchesat National Nano Device Laboratory (NDL) which processes the capability of 0.3um Si ULSI technologies and SiGe works as well as lll-V, a-Si/SiGe lines are also presented.

Understanding and removing surface states limiting charge transport in TiO2 nanowire arrays for enhanced optoelectronic device performance.

PubMed

Sheng, Xia; Chen, Liping; Xu, Tao; Zhu, Kai; Feng, Xinjian

2016-03-01

Charge transport within electrode materials plays a key role in determining the optoelectronic device performance. Aligned single-crystal TiO 2 nanowire arrays offer an ideal electron transport path and are expected to have higher electron mobility. Unfortunately, their transport is found not to be superior to that in nanoparticle films. Here we show that the low electron transport in rutile TiO 2 nanowires is mainly caused by surface traps in relatively deep energy levels, which cannot be removed by conventional approaches, such as oxygen annealing treatment. Moreover, we demonstrate an effective wet-chemistry approach to minimize these trap states, leading to over 20-fold enhancement in electron diffusion coefficient and 62% improvement in solar cell performance. On the basis of our results, the potential of TiO 2 NWs can be developed and well-utilized, which is significantly important for their practical applications.

Inverted organic photosensitive devices

DOEpatents

Forrest, Stephen R.; Bailey-Salzman, Rhonda F.

2016-12-06

The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz.

PubMed

Moustakas, Theodore D; Paiella, Roberto

2017-10-01

This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

NASA Astrophysics Data System (ADS)

Moustakas, Theodore D.; Paiella, Roberto

2017-10-01

This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

Piezo-Phototronic Effect in a Quantum Well Structure.

PubMed

Huang, Xin; Du, Chunhua; Zhou, Yongli; Jiang, Chunyan; Pu, Xiong; Liu, Wei; Hu, Weiguo; Chen, Hong; Wang, Zhong Lin

2016-05-24

With enhancements in the performance of optoelectronic devices, the field of piezo-phototronics has attracted much attention, and several theoretical works have been reported based on semiclassical models. At present, the feature size of optoelectronic devices are rapidly shrinking toward several tens of nanometers, which results in the quantum confinement effect. Starting from the basic piezoelectricity equation, Schrödinger equation, Poisson equation, and Fermi's golden rule, a self-consistent theoretical model is proposed to study the piezo-phototronic effect in the framework of perturbation theory in quantum mechanics. The validity and universality of this model are well-proven with photoluminescence measurements in a single GaN/InGaN quantum well and multiple GaN/InGaN quantum wells. This study provides important insight into the working principle of nanoscale piezo-phototronic devices as well as guidance for the future device design.

Variation in Optoelectronic Properties of Azo Dye-Sensitized TiO 2 Semiconductor Interfaces with Different Adsorption Anchors: Carboxylate, Sulfonate, Hydroxyl and Pyridyl Groups

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Lei; Cole, Jacqueline M.; Dai, Chencheng

2014-05-28

The optoelectronic properties of four azo dye-sensitized TiO2 interfaces are systematically studied as a function of a changing dye anchoring group: carboxylate, sulfonate, hydroxyl, and pyridyl. The variation in optoelectronic properties of the free dyes and those in dye/TiO 2 nanocomposites are studied both experimentally and computationally, in the context of prospective dye-sensitized solar cell (DSSC) applications. Experimental UV/vis absorption spectroscopy, cyclic voltammetry, and DSSC device performance testing reveal a strong dependence on the nature of the anchor of the optoelectronic properties of these dyes, both in solution and as dye/TiO2 nanocomposites. First-principles calculations on both an isolated dye/TiO2 clustermore » model (using localized basis sets) and each dye modeled onto the surface of a 2D periodic TiO2 nanostructure (using plane wave basis sets) are presented. Detailed examination of these experimental and computational results, in terms of light harvesting, electron conversion and photovoltaic device performance characteristics, indicates that carboxylate is the best anchoring group, and hydroxyl is the worst, whereas sulfonate and pyridyl groups exhibit competing potential. Different sensitization solvents are found to affect critically the extent of dye adsorption achieved in the dye-sensitization of the TiO2 semiconductor, especially where the anchor is a pyridyl group.« less

Enhancement of sun-tracking with optoelectronic devices

NASA Astrophysics Data System (ADS)

Wu, Jiunn-Chi

2015-09-01

Sun-tracking is one of the most challenging tasks in implementing CPV. In order to justify the additional complexity of sun-tracking, careful assessment of performance of CPV by monitoring the performance of sun-tracking is vital. Measurement of accuracy of sun-tracking is one of the important tasks in an outdoor test. This study examines techniques with three optoelectronic devices (i.e. position sensitive device (PSD), CCD and webcam). Outdoor measurements indicated that during sunny days (global horizontal insolation (GHI) > 700 W/m2), three devices recorded comparable tracking accuracy of 0.16˜0.3°. The method using a PSD has fastest sampling rate and is able to detect the sun's position without additional image processing. Yet, it cannot identify the sunlight effectively during low insolation. The techniques with a CCD and a webcam enhance the accuracy of centroid of sunlight via the optical lens and image processing. The image quality acquired using a webcam and a CCD is comparable but the webcam is more affordable than that of CCD because it can be assembled with consumer-graded products.

Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures

PubMed Central

Wang, Jiaming; Xu, Fujun; Zhang, Xia; An, Wei; Li, Xin-Zheng; Song, Jie; Ge, Weikun; Tian, Guangshan; Lu, Jing; Wang, Xinqiang; Tang, Ning; Yang, Zhijian; Li, Wei; Wang, Weiying; Jin, Peng; Chen, Yonghai; Shen, Bo

2014-01-01

Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelectronic devices and consequently the relevant performance of this material system. Here we show a brandnew type-II band alignment of the lattice-matched In0.17Al0.83N/GaN heterostructure from the perspective of both experimental observations and first-principle theoretical calculations. The band discontinuity is dominated by the conduction band offset ΔEC, with a small contribution from the valence band offset ΔEV which equals 0.1 eV (with being above). Our work may open up new prospects to realize high-performance III-Nitrides optoelectronic devices based on type-II energy band engineering. PMID:25283334

Evidence of type-II band alignment in III-nitride semiconductors: experimental and theoretical investigation for In 0.17 Al 0.83 N/GaN heterostructures.

PubMed

Wang, Jiaming; Xu, Fujun; Zhang, Xia; An, Wei; Li, Xin-Zheng; Song, Jie; Ge, Weikun; Tian, Guangshan; Lu, Jing; Wang, Xinqiang; Tang, Ning; Yang, Zhijian; Li, Wei; Wang, Weiying; Jin, Peng; Chen, Yonghai; Shen, Bo

2014-10-06

Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelectronic devices and consequently the relevant performance of this material system. Here we show a brandnew type-II band alignment of the lattice-matched In 0.17 Al 0.83 N/GaN heterostructure from the perspective of both experimental observations and first-principle theoretical calculations. The band discontinuity is dominated by the conduction band offset ΔEC, with a small contribution from the valence band offset ΔEV which equals 0.1 eV (with E(AlInN(VBM) being above E(GaN)(VBM)). Our work may open up new prospects to realize high-performance III-Nitrides optoelectronic devices based on type-II energy band engineering.

Wafer bonded virtual substrate and method for forming the same

DOEpatents

Atwater, Jr., Harry A.; Zahler, James M [Pasadena, CA; Morral, Anna Fontcuberta i [Paris, FR

2007-07-03

A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

Wafer bonded virtual substrate and method for forming the same

NASA Technical Reports Server (NTRS)

Atwater, Jr., Harry A. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcuberta i (Inventor)

2007-01-01

A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

Modelling of optoelectronic circuits based on resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

2017-08-01

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices

PubMed Central

Tian, He; Yang, Yi; Xie, Dan; Cui, Ya-Long; Mi, Wen-Tian; Zhang, Yuegang; Ren, Tian-Ling

2014-01-01

In virtue of its superior properties, the graphene-based device has enormous potential to be a supplement or an alternative to the conventional silicon-based device in varies applications. However, the functionality of the graphene devices is still limited due to the restriction of the high cost, the low efficiency and the low quality of the graphene growth and patterning techniques. We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. And the graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based electronic, optoelectronic and electroacoustic devices. PMID:24398542

In-situ device integration of large-area patterned organic nanowire arrays for high-performance optical sensors

PubMed Central

Wu, Yiming; Zhang, Xiujuan; Pan, Huanhuan; Deng, Wei; Zhang, Xiaohong; Zhang, Xiwei; Jie, Jiansheng

2013-01-01

Single-crystalline organic nanowires (NWs) are important building blocks for future low-cost and efficient nano-optoelectronic devices due to their extraordinary properties. However, it remains a critical challenge to achieve large-scale organic NW array assembly and device integration. Herein, we demonstrate a feasible one-step method for large-area patterned growth of cross-aligned single-crystalline organic NW arrays and their in-situ device integration for optical image sensors. The integrated image sensor circuitry contained a 10 × 10 pixel array in an area of 1.3 × 1.3 mm2, showing high spatial resolution, excellent stability and reproducibility. More importantly, 100% of the pixels successfully operated at a high response speed and relatively small pixel-to-pixel variation. The high yield and high spatial resolution of the operational pixels, along with the high integration level of the device, clearly demonstrate the great potential of the one-step organic NW array growth and device construction approach for large-scale optoelectronic device integration. PMID:24287887

Effectively Transparent Front Contacts for Optoelectronic Devices

DOE PAGES

Saive, Rebecca; Borsuk, Aleca M.; Emmer, Hal S.; ...

2016-06-10

Effectively transparent front contacts for optoelectronic devices achieve a measured transparency of up to 99.9% and a measured sheet resistance of 4.8 Ω sq-1. These 3D microscale triangular cross-section grid fingers redirect incoming photons efficiently to the active semiconductor area and can replace standard grid fingers as well as transparent conductive oxide layers in optoelectronic devices. Optoelectronic devices such as light emitting diodes, photodiodes, and solar cells play an important and expanding role in modern technology. Photovoltaics is one of the largest optoelectronic industry sectors and an ever-increasing component of the world's rapidly growing renewable carbon-free electricity generation infrastructure. Inmore » recent years, the photovoltaics field has dramatically expanded owing to the large-scale manufacture of inexpensive crystalline Si and thin film cells and modules. The current record efficiency (η = 25.6%) Si solar cell utilizes a heterostructure intrinsic thin layer (HIT) design[1] to enable increased open circuit voltage, while more mass-manufacturable solar cell architectures feature front contacts.[2, 3] Thus improved solar cell front contact designs are important for future large-scale photovoltaics with even higher efficiency.« less

Method of fabricating an optoelectronic device having a bulk heterojunction

DOEpatents

Shtein, Max [Ann Arbor, MI; Yang, Fan [Princeton, NJ; Forrest, Stephen R [Princeton, NJ

2008-10-14

A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.

PubMed

Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung

2016-06-01

Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm

NASA Astrophysics Data System (ADS)

Zeng, Longhui; Lin, Shenghuang; Lou, Zhenhua; Yuan, Huiyu; Long, Hui; Li, Yanyong; Lu, Wei; Lau, Shu Ping; Wu, Di; Tsang, Yuen Hong

2018-04-01

The newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe2 have promising applications in high-performance microelectronic and optoelectronic devices due to their high carrier mobilities, widely tunable bandages and ultrastabilities. However, the optoelectronic performance of broadband PtSe2 photodetectors integrated with silicon remains undiscovered. Here, we report the successful preparation of large-scale, uniform and vertically grown PtSe2 films by simple selenization method for the design of a PtSe2/Si nanowire array heterostructure, which exhibited a very good photoresponsivity of 12.65 A/W, a high specific detectivity of 2.5 × 1013 Jones at -5 V and fast rise/fall times of 10.1/19.5 μs at 10 kHz without degradation while being capable of responding to high frequencies of up to 120 kHz. Our work has demonstrated the compatibility of PtSe2 with the existing silicon technology and ultrabroad band detection ranging from deep ultraviolet to optical telecommunication wavelengths, which can largely cover the limitations of silicon detectors. Further investigation of the device revealed pronounced photovoltaic behavior at 0 V, making it capable of operating as a self-powered photodetector. Overall, this representative PtSe2/Si nanowire array-based photodetector offers great potential for applications in next-generation optoelectronic and electronic devices.

Nanostructure and optoelectronic phenomena in germanium-transparent conductive oxide (Ge:TCO) composites

NASA Astrophysics Data System (ADS)

Shih, Grace Hwei-Pyng

Nanostructured composites are attracting intense interest for electronic and optoelectronic device applications, specifically as active elements in thin film photovoltaic (PV) device architectures. These systems implement fundamentally different concepts of enhancing energy conversion efficiencies compared to those seen in current commercial devices. This is possible through considerable flexibility in the manipulation of device-relevant properties through control of the interplay between the nanostructure and the optoelectronic response. In the present work, inorganic nanocomposites of semiconductor Ge embedded in transparent conductive indium tin oxide (ITO) as well as Ge in zinc oxide (ZnO) were produced by a single step RF-magnetron sputter deposition process. It is shown that, by controlling the design of the nanocomposites as well as heat treatment conditions, decreases in the physical dimensions of Ge nanophase size provided an effective tuning of the optical absorption and charge transport properties. This effect of changes in the optical properties of nanophase semiconductors with respect to size is known as the quantum confinement effect. Variation in the embedding matrix material between ITO and ZnO with corresponding characterization of optoelectronic properties exhibit notable differences in the presence and evolution of an interfacial oxide within these composites. Further studies of interfacial structures were performed using depth-profiling XPS and Raman spectroscopy, while study of the corresponding electronic effects were performed using room temperature and temperature-dependent Hall Effect. Optical absorption was noted to shift to higher onset energies upon heat treatment with a decrease in the observed Ge domain size, indicating quantum confinement effects within these systems. This contrasts to previous investigations that have involved the introduction of nanoscale Ge into insulating, amorphous oxides. Comparison of these different matrix chemistries highlights the overarching role of interfacial structures on quantum-size characteristics. The opportunity to tune the spectral response of these PV materials, via control of semiconductor phase assembly in the nanocomposite, directly impacts the potential for the use of these materials as sensitizing elements for enhanced solar cell conversion efficiency.

Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells.

PubMed

Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

2017-12-01

The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

Optoelectronic devices utilizing materials having enhanced electronic transitions

DOEpatents

Black, Marcie R [Newton, MA

2011-02-22

An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Optoelectronic devices utilizing materials having enhanced electronic transitions

DOEpatents

Black, Marcie R.

2013-04-09

An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Single event test methodology for integrated optoelectronics

NASA Technical Reports Server (NTRS)

Label, Kenneth A.; Cooley, James A.; Stassinopoulos, E. G.; Marshall, Paul; Crabtree, Christina

1993-01-01

A single event upset (SEU), defined as a transient or glitch on the output of a device, and its applicability to integrated optoelectronics are discussed in the context of spacecraft design and the need for more than a bit error rate viewpoint for testing and analysis. A methodology for testing integrated optoelectronic receivers and transmitters for SEUs is presented, focusing on the actual test requirements and system schemes needed for integrated optoelectronic devices. Two main causes of single event effects in the space environment, including protons and galactic cosmic rays, are considered along with ground test facilities for simulating the space environment.

Multiscale modeling of nanostructured ZnO based devices for optoelectronic applications: Dynamically-coupled structural fields, charge, and thermal transport processes

NASA Astrophysics Data System (ADS)

Abdullah, Abdulmuin; Alqahtani, Saad; Nishat, Md Rezaul Karim; Ahmed, Shaikh; SIU Nanoelectronics Research Group Team

Recently, hybrid ZnO nanostructures (such as ZnO deposited on ZnO-alloys, Si, GaN, polymer, conducting oxides, and organic compounds) have attracted much attention for their possible applications in optoelectronic devices (such as solar cells, light emitting and laser diodes), as well as in spintronics (such as spin-based memory, and logic). However, efficiency and performance of these hybrid ZnO devices strongly depend on an intricate interplay of complex, nonlinear, highly stochastic and dynamically-coupled structural fields, charge, and thermal transport processes at different length and time scales, which have not yet been fully assessed experimentally. In this work, we study the effects of these coupled processes on the electronic and optical emission properties in nanostructured ZnO devices. The multiscale computational framework employs the atomistic valence force-field molecular mechanics, models for linear and non-linear polarization, the 8-band sp3s* tight-binding models, and coupling to a TCAD toolkit to determine the terminal properties of the device. A series of numerical experiments are performed (by varying different nanoscale parameters such as size, geometry, crystal cut, composition, and electrostatics) that mainly aim to improve the efficiency of these devices. Supported by the U.S. National Science Foundation Grant No. 1102192.

External amplitude and frequency modulation of a terahertz quantum cascade laser using metamaterial/graphene devices.

PubMed

Kindness, S J; Jessop, D S; Wei, B; Wallis, R; Kamboj, V S; Xiao, L; Ren, Y; Braeuninger-Weimer, P; Aria, A I; Hofmann, S; Beere, H E; Ritchie, D A; Degl'Innocenti, R

2017-08-09

Active control of the amplitude and frequency of terahertz sources is an essential prerequisite for exploiting a myriad of terahertz applications in imaging, spectroscopy, and communications. Here we present a optoelectronic, external modulation technique applied to a terahertz quantum cascade laser which holds the promise of addressing a number of important challenges in this research area. A hybrid metamaterial/graphene device is implemented into an external cavity set-up allowing for optoelectronic tuning of feedback into a quantum cascade laser. We demonstrate powerful, all-electronic, control over the amplitude and frequency of the laser output. Full laser switching is performed by electrostatic gating of the metamaterial/graphene device, demonstrating a modulation depth of 100%. External control of the emission spectrum is also achieved, highlighting the flexibility of this feedback method. By taking advantage of the frequency dispersive reflectivity of the metamaterial array, different modes of the QCL output are selectively suppressed using lithographic tuning and single mode operation of the multi-mode laser is enforced. Side mode suppression is electrically modulated from ~6 dB to ~21 dB, demonstrating active, optoelectronic modulation of the laser frequency content between multi-mode and single mode operation.

1.31-1.55-µm Hybrid integrated optoelectronic receiver using low-loss quasi-monolithic integration technology

NASA Astrophysics Data System (ADS)

Luo, Yang; Huang, Yongqing; Ren, Xiaomin; Duan, Xiaofeng; Wang, Qi

2014-01-01

In order to integrate photonic devices with electronic devices to realize the low-loss hybrid integrated devices. A wide spectral hybrid integrated optoelectronic receiver was fabricated by using quasi-monolithic integration technology (QMIT) in this paper. It consisted of a 8.5 GHz InGaAs photodetector and a 1.25 Gbps mature transimpedance pre-amplifier (TIA) complementrary metal oxide semiconductor (CMOS) chip. The Au layer was deposited on a designed Si platform to form planar waveguide electrode which replaced a part of bonding wire, so it reduced the parasitic parameters of the optoelectronic receiver, and then enhanced high-speed response characteristics and the stability of the hybrid integrated receiver. Finally, a 3 Gbps clear open eye diagram of the hybrid integrated optoelectronic receiver was obtained.

High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure.

PubMed

Chen, Yan; Wang, Xudong; Wu, Guangjian; Wang, Zhen; Fang, Hehai; Lin, Tie; Sun, Shuo; Shen, Hong; Hu, Weida; Wang, Jianlu; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

2018-03-01

Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light-emitting devices, and photodiodes. In this work, high-performance photovoltaic photodetectors based on MoTe 2 /MoS 2 vertical heterojunctions are demonstrated by exfoliating-restacking approach. The fundamental electric properties and band structures of the junction are revealed and analyzed. It is shown that this kind of photodetectors can operate under zero bias with high on/off ratio (>10 5 ) and ultralow dark current (≈3 pA). Moreover, a fast response time of 60 µs and high photoresponsivity of 46 mA W -1 are also attained at room temperature. The junctions based on 2D materials are expected to constitute the ultimate functional elements of nanoscale electronic and optoelectronic applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jaekwang; Huang, Jingsong; Sumpter, Bobby G.

Compared with their bulk counterparts, 2D materials can sustain much higher elastic strain at which optical quantities such as bandgaps and absorption spectra governing optoelectronic device performance can be modified with relative ease. Using first-principles density functional theory and quasiparticle GW calculations, we demonstrate how uniaxial tensile strain can be utilized to optimize the electronic and optical properties of transition metal dichalcogenide lateral (in-plane) heterostructures such as MoX 2/WX 2 (X = S, Se, Te). We find that these lateral-type heterostructures may facilitate efficient electron–hole separation for light detection/harvesting and preserve their type II characteristic up to 12% of uniaxialmore » strain. Based on the strain-dependent bandgap and band offset, we show that uniaxial tensile strain can significantly increase the power conversion efficiency of these lateral heterostructures. Our results suggest that these strain-engineered lateral heterostructures are promising for optimizing optoelectronic device performance by selectively tuning the energetics of the bandgap.« less

Beyond Donor-Acceptor (D-A) Approach: Structure-Optoelectronic Properties-Organic Photovoltaic Performance Correlation in New D-A1 -D-A2 Low-Bandgap Conjugated Polymers.

PubMed

Chochos, Christos L; Drakopoulou, Sofia; Katsouras, Athanasios; Squeo, Benedetta M; Sprau, Christian; Colsmann, Alexander; Gregoriou, Vasilis G; Cando, Alex-Palma; Allard, Sybille; Scherf, Ullrich; Gasparini, Nicola; Kazerouni, Negar; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

2017-04-01

Low-bandgap near-infrared polymers are usually synthesized using the common donor-acceptor (D-A) approach. However, recently polymer chemists are introducing more complex chemical concepts for better fine tuning of their optoelectronic properties. Usually these studies are limited to one or two polymer examples in each case study so far, though. In this study, the dependence of optoelectronic and macroscopic (device performance) properties in a series of six new D-A 1 -D-A 2 low bandgap semiconducting polymers is reported for the first time. Correlation between the chemical structure of single-component polymer films and their optoelectronic properties has been achieved in terms of absorption maxima, optical bandgap, ionization potential, and electron affinity. Preliminary organic photovoltaic results based on blends of the D-A 1 -D-A 2 polymers as the electron donor mixed with the fullerene derivative [6,6]-phenyl-C 71 -butyric acid methyl ester demonstrate power conversion efficiencies close to 4% with short-circuit current densities (J sc ) of around 11 mA cm -2 , high fill factors up to 0.70, and high open-circuit voltages (V oc s) of 0.70 V. All the devices are fabricated in an inverted architecture with the photoactive layer processed in air with doctor blade technique, showing the compatibility with roll-to-roll large-scale manufacturing processes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light box for investigation of characteristics of optoelectronics detectors

NASA Astrophysics Data System (ADS)

Szreder, Agnieszka; Mazikowski, Adam

2017-09-01

In this paper, a light box for investigation of characteristics of optoelectronic detectors is described. The light box consists of an illumination device, an optical power sensor and a mechanical enclosure. The illumination device is based on four types of high-power light emitting diodes (LED): white light, red, green and blue. The illumination level can be varied for each LED independently by the driver and is measured by optical power sensor. The mechanical enclosure provides stable mounting points for the illumination device, sensor and the examined detector and protects the system from external light, which would otherwise strongly influence the measurement results. Uniformity of illumination distribution provided by the light box for all colors is good, making the measurement results less dependent on the position of the examined detector. The response of optoelectronic detectors can be investigated using the developed light box for each LED separately or for any combination of up to four LED types. As the red, green and blue LEDs are rather narrow bandwidth sources, spectral response of different detectors can be examined for these wavelength ranges. The described light box can be used for different applications. Its primary use is in a student laboratory setup for investigation of characteristics of optoelectronic detectors. Moreover, it can also be used in various colorimetric or photographic applications. Finally, it will be used as a part of demonstrations from the fields of vision and color, performed during science fairs and outreach activities increasing awareness of optics and photonics.

2D Organic Materials for Optoelectronic Applications.

PubMed

Yang, Fangxu; Cheng, Shanshan; Zhang, Xiaotao; Ren, Xiaochen; Li, Rongjin; Dong, Huanli; Hu, Wenping

2018-01-01

The remarkable merits of 2D materials with atomically thin structures and optoelectronic attributes have inspired great interest in integrating 2D materials into electronics and optoelectronics. Moreover, as an emerging field in the 2D-materials family, assembly of organic nanostructures into 2D forms offers the advantages of molecular diversity, intrinsic flexibility, ease of processing, light weight, and so on, providing an exciting prospect for optoelectronic applications. Herein, the applications of organic 2D materials for optoelectronic devices are a main focus. Material examples include 2D, organic, crystalline, small molecules, polymers, self-assembly monolayers, and covalent organic frameworks. The protocols for 2D-organic-crystal-fabrication and -patterning techniques are briefly discussed, then applications in optoelectronic devices are introduced in detail. Overall, an introduction to what is known and suggestions for the potential of many exciting developments are presented. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Planar-integrated single-crystalline perovskite photodetectors

PubMed Central

Saidaminov, Makhsud I.; Adinolfi, Valerio; Comin, Riccardo; Abdelhady, Ahmed L.; Peng, Wei; Dursun, Ibrahim; Yuan, Mingjian; Hoogland, Sjoerd; Sargent, Edward H.; Bakr, Osman M.

2015-01-01

Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals have been shown to overcome this problem and exhibit impressive improvements: low trap density, low intrinsic carrier concentration, high mobility, and long diffusion length that outperform perovskite-based thin films. These characteristics make the material ideal for realizing photodetection that is simultaneously fast and sensitive; unfortunately, these macroscopic single crystals cannot be grown on a planar substrate, curtailing their potential for optoelectronic integration. Here we produce large-area planar-integrated films made up of large perovskite single crystals. These crystalline films exhibit mobility and diffusion length comparable with those of single crystals. Using this technique, we produced a high-performance light detector showing high gain (above 104 electrons per photon) and high gain-bandwidth product (above 108 Hz) relative to other perovskite-based optical sensors. PMID:26548941

Design-for-reliability (DfR) of aerospace electronics: Attributes and challenges

NASA Astrophysics Data System (ADS)

Bensoussan, A.; Suhir, E.

The next generation of multi-beam satellite systems that would be able to provide effective interactive communication services will have to operate within a highly flexible architecture. One option to develop such flexibility is to employ microwaves and/or optoelectronic components and to make them reliable. The use of optoelectronic devices, equipments and systems will result indeed in significant improvement in the state-of-the-art only provided that the new designs will suggest a novel and effective architecture that will combine the merits of good functional performance, satisfactory mechanical (structural) reliability and high cost effectiveness. The obvious challenge is the ability to design and fabricate equipment based on EEE components that would be able to successfully withstand harsh space environments for the entire duration of the mission. It is imperative that the major players in the space industry, such as manufacturers, industrial users, and space agencies, understand the importance and the limits of the achievable quality and reliability of optoelectronic devices operated in harsh environments. It is equally imperative that the physics of possible failures is well understood and, if necessary, minimized, and that adequate Quality Standards are developed and employed. The space community has to identify and to develop the strategic approach for validating optoelectronic products. This should be done with consideration of numerous intrinsic and extrinsic requirements for the systems' performance. When considering a particular next generation optoelectronic space system, the space community needs to address the following major issues: proof of concept for this system, proof of reliability and proof of performance. This should be done with taking into account the specifics of the anticipated application. High operational reliability cannot be left to the prognostics and health monitoring/management (PHM) effort and stage, no matter how important and - ffective such an effort might be. Reliability should be pursued at all the stages of the equipment lifetime: design, product development, manufacturing, burn-in testing and, of course, subsequent PHM after the space apparatus is launched and operated.

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

PubMed

Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

2017-12-04

High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

Two-Dimensional CH₃NH₃PbI₃ Perovskite: Synthesis and Optoelectronic Application.

PubMed

Liu, Jingying; Xue, Yunzhou; Wang, Ziyu; Xu, Zai-Quan; Zheng, Changxi; Weber, Bent; Song, Jingchao; Wang, Yusheng; Lu, Yuerui; Zhang, Yupeng; Bao, Qiaoliang

2016-03-22

Hybrid organic-inorganic perovskite materials have received substantial research attention due to their impressively high performance in photovoltaic devices. As one of the oldest functional materials, it is intriguing to explore the optoelectronic properties in perovskite after reducing it into a few atomic layers in which two-dimensional (2D) confinement may get involved. In this work, we report a combined solution process and vapor-phase conversion method to synthesize 2D hybrid organic-inorganic perovskite (i.e., CH3NH3PbI3) nanocrystals as thin as a single unit cell (∼1.3 nm). High-quality 2D perovskite crystals have triangle and hexagonal shapes, exhibiting tunable photoluminescence while the thickness or composition is changed. Due to the high quantum efficiency and excellent photoelectric properties in 2D perovskites, a high-performance photodetector was demonstrated, in which the current can be enhanced significantly by shining 405 and 532 nm lasers, showing photoresponsivities of 22 and 12 AW(-1) with a voltage bias of 1 V, respectively. The excellent optoelectronic properties make 2D perovskites building blocks to construct 2D heterostructures for wider optoelectronic applications.

Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

PubMed

Oh, Soong Ju; Berry, Nathaniel E; Choi, Ji-Hyuk; Gaulding, E Ashley; Paik, Taejong; Hong, Sung-Hoon; Murray, Christopher B; Kagan, Cherie R

2013-03-26

We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhuang, Shendong; Tang, Nujiang; Chen, Zhuo, E-mail: zchen@nju.edu.cn

Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture.more » We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.« less

Opto-Electronic Characterization CdTe Solar Cells from TCO to Back Contact with Nano-Scale CL Probe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moseley, John; Al-Jassim, Mowafak M.; Paudel, Naba

2015-06-14

We used cathodoluminescence (CL) (spectrum-per-pixel) imaging on beveled CdTe solar cell sections to investigate the opto-electronic properties of these devices from the TCO to the back contact. We used a nano-scale CL probe to resolve luminescence from grain boundary (GB) and grain interior (GI) locations near the CdS/CdTe interface where the grains are very small. As-deposited, CdCl2-treated, Cu-treated, and (CdCl2+Cu)-treated cells were analyzed. Color-coded CL spectrum imaging maps on bevels illustrate the distribution of the T=6 K luminescence transitions through the depth of devices with unprecedented spatial resolution. The CL at the GBs and GIs is shown to vary significantlymore » from the front to the back of devices and is a sensitive function of processing. Supporting D-SIMS depth profile, TRPL lifetime, and C-V measurements are used to link the CL data to the J-V performance of devices.« less

Highly sensitive MoS2 photodetectors with graphene contacts

NASA Astrophysics Data System (ADS)

Han, Peize; St. Marie, Luke; Wang, Qing X.; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-01

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

Highly sensitive MoS2 photodetectors with graphene contacts.

PubMed

Han, Peize; St Marie, Luke; Wang, Qing X; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-18

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS 2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 10 14 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS 2 . We study MoS 2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

Optoelectronic Mounting Structure

DOEpatents

Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

2004-10-05

An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

Precision Controlled Carbon Materials for Next-Generation Optoelectronic and Photonic Devices

DTIC Science & Technology

2018-01-08

absorbers. Semiconducting nanotubes are strong, dye-like absorbers with bandgaps tunable to the ideal for single-junction solar PV ~1.3 eV or deeper...semiconducting carbon nanotube-based photovoltaic solar cells and photodetectors; (2) high-performance carbon nanotube electronics; (3) stretchable...photovoltaic solar cells and photodetectors Semiconducting carbon nanotubes are attractive absorbers for photovoltaic and photodetector devices. The

Measurements relevant to the performance of infrared opto-electronic devices in fog

NASA Astrophysics Data System (ADS)

Clay, M. R.; Lenham, A. P.

1981-04-01

The transmissivity of the atmosphere in the visible and infrared was measured in a number of fogs. The data is summarized in the form of tables and diagrams that indicate the gain in range that may be achievable in the various infrared windows. In some fogs there does not appear to be any significant advantage in using infrared devices.

Carbon nanotube chemistry and assembly for electronic devices

NASA Astrophysics Data System (ADS)

Derycke, Vincent; Auvray, Stéphane; Borghetti, Julien; Chung, Chia-Ling; Lefèvre, Roland; Lopez-Bezanilla, Alejandro; Nguyen, Khoa; Robert, Gaël; Schmidt, Gregory; Anghel, Costin; Chimot, Nicolas; Lyonnais, Sébastien; Streiff, Stéphane; Campidelli, Stéphane; Chenevier, Pascale; Filoramo, Arianna; Goffman, Marcelo F.; Goux-Capes, Laurence; Latil, Sylvain; Blase, Xavier; Triozon, François; Roche, Stephan; Bourgoin, Jean-Philippe

2009-05-01

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties; (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes (this route being particularly relevant for gas- and bio-sensors, opto-electronic devices and energy sources); and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we review our recent results concerning nanotube chemistry and assembly and their use to develop electronic devices. In particular, we present carbon nanotube field effect transistors and their chemical optimization, high frequency nanotube transistors, nanotube-based opto-electronic devices with memory capabilities and nanotube-based nano-electromechanical systems (NEMS). The impact of chemical functionalization on the electronic properties of CNTs is analyzed on the basis of theoretical calculations. To cite this article: V. Derycke et al., C. R. Physique 10 (2009).

Ultrathin (<1 μm) Substrate-Free Flexible Photodetector on Quantum Dot-Nanocellulose Paper

PubMed Central

Wu, Jingda; Lin, Lih Y.

2017-01-01

Conventional approaches to flexible optoelectronic devices typically require depositing the active materials on external substrates. This is mostly due to the weak bonding between individual molecules or nanocrystals in the active materials, which prevents sustaining a freestanding thin film. Herein we demonstrate an ultrathin freestanding ZnO quantum dot (QD) active layer with nanocellulose structuring, and its corresponding device fabrication method to achieve substrate-free flexible optoelectronic devices. The ultrathin ZnO QD-nanocellulose composite is obtained by hydrogel transfer printing and solvent-exchange processes to overcome the water capillary force which is detrimental to achieving freestanding thin films. We achieved an active nanocellulose paper with ~550 nm thickness, and >91% transparency in the visible wavelength range. The film retains the photoconductive and photoluminescent properties of ZnO QDs and is applied towards substrate-free Schottky photodetector applications. The device has an overall thickness of ~670 nm, which is the thinnest freestanding optoelectronic device to date, to the best of our knowledge, and functions as a self-powered visible-blind ultraviolet photodetector. This platform can be readily applied to other nano materials as well as other optoelectronic device applications. PMID:28266651

A full-duplex working integrated optoelectronic device for optical interconnect

NASA Astrophysics Data System (ADS)

Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

2018-05-01

In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

NASA Astrophysics Data System (ADS)

Zúñiga-Pérez, Jesús; Consonni, Vincent; Lymperakis, Liverios; Kong, Xiang; Trampert, Achim; Fernández-Garrido, Sergio; Brandt, Oliver; Renevier, Hubert; Keller, Stacia; Hestroffer, Karine; Wagner, Markus R.; Reparaz, Juan Sebastián; Akyol, Fatih; Rajan, Siddharth; Rennesson, Stéphanie; Palacios, Tomás; Feuillet, Guy

2016-12-01

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade.

Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

NASA Astrophysics Data System (ADS)

Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

2017-11-01

Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices

NASA Astrophysics Data System (ADS)

Zheng, Zhaoqiang; Zhang, Tanmei; Yao, Jiandomg; Zhang, Yi; Xu, Jiarui; Yang, Guowei

2016-06-01

Although two-dimensional (2D) materials have attracted considerable research interest for use in the development of innovative wearable optoelectronic systems, the integrated optoelectronic performance of 2D materials photodetectors, including flexibility, transparency, broadband response and stability in air, remains quite low to date. Here, we demonstrate a flexible, transparent, high-stability and ultra-broadband photodetector made using large-area and highly-crystalline WSe2 films that were prepared by pulsed-laser deposition (PLD). Benefiting from the 2D physics of WSe2 films, this device exhibits excellent average transparency of 72% in the visible range and superior photoresponse characteristics, including an ultra-broadband detection spectral range from 370 to 1064 nm, reversible photoresponsivity approaching 0.92 A W-1, external quantum efficiency of up to 180% and a relatively fast response time of 0.9 s. The fabricated photodetector also demonstrates outstanding mechanical flexibility and durability in air. Also, because of the wide compatibility of the PLD-grown WSe2 film, we can fabricate various photodetectors on multiple flexible or rigid substrates, and all these devices will exhibit distinctive switching behavior and superior responsivity. These indicate a possible new strategy for the design and integration of flexible, transparent and broadband photodetectors based on large-area WSe2 films, with great potential for practical applications in the wearable optoelectronic devices.

78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-12-20

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-860] Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY...

Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

DOEpatents

Thompson, Mark E [Anaheim Hills, CA; Li, Jian [Los Angeles, CA; Forrest, Stephen [Princeton, NJ; Rand, Barry [Princeton, NJ

2011-02-22

An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

Successful development of first-generation laser device; marking China's optoelectronic technology at world class level

NASA Astrophysics Data System (ADS)

1995-04-01

Bell Laboratories has developed the world's first optical information processor. Its core device is a self-excited electrooptical effect apparatus array of symmetric operation. After being developed in the United States, this high-technology device was successfully developed by China's scientists,thus making the fact that China's optoelectronic technology is among the most advanced in the world.

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.

PubMed

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

2016-10-27

Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures.

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

PubMed Central

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

2016-01-01

Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures. PMID:28335321

Probing molecular orientations in thin films by x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Li, Y.; Li, P.; Lu, Z.-H.

2018-03-01

A great number of functional organic molecules in active thin-film layers of optoelectronic devices have highly asymmetric structures, such as plate-like, rod-like, etc. This makes molecular orientation an important aspect in thin-films as it can significantly affect both the optical and electrical performance of optoelectronic devices. With a combination of in-situ ultra violet photoelectron spectroscopy (UPS) and x-ray photoelectron spectroscopy (XPS) investigations for organic molecules having a broad range of structural properties, we discovered a rigid connection of core levels and frontier highest occupied molecular orbital levels at organic interfaces. This finding opens up opportunities of using X-ray photoemission spectroscopy as an alternative tool to UPS for providing an easy and unambiguous data interpretation in probing molecular orientations.

Phase Transition Control for High Performance Ruddlesden-Popper Perovskite Solar Cells.

PubMed

Zhang, Xu; Munir, Rahim; Xu, Zhuo; Liu, Yucheng; Tsai, Hsinhan; Nie, Wanyi; Li, Jianbo; Niu, Tianqi; Smilgies, Detlef-M; Kanatzidis, Mercouri G; Mohite, Aditya D; Zhao, Kui; Amassian, Aram; Liu, Shengzhong Frank

2018-05-01

Ruddlesden-Popper reduced-dimensional hybrid perovskite (RDP) semiconductors have attracted significant attention recently due to their promising stability and excellent optoelectronic properties. Here, the RDP crystallization mechanism in real time from liquid precursors to the solid film is investigated, and how the phase transition kinetics influences phase purity, quantum well orientation, and photovoltaic performance is revealed. An important template-induced nucleation and growth of the desired (BA) 2 (MA) 3 Pb 4 I 13 phase, which is achieved only via direct crystallization without formation of intermediate phases, is observed. As such, the thermodynamically preferred perpendicular crystal orientation and high phase purity are obtained. At low temperature, the formation of intermediate phases, including PbI 2 crystals and solvate complexes, slows down intercalation of ions and increases nucleation barrier, leading to formation of multiple RDP phases and orientation randomness. These insights enable to obtain high quality (BA) 2 (MA) 3 Pb 4 I 13 films with preferentially perpendicular quantum well orientation, high phase purity, smooth film surface, and improved optoelectronic properties. The resulting devices exhibit high power conversion efficiency of 12.17%. This work should help guide the perovskite community to better control Ruddlesden-Popper perovskite structure and further improve optoelectronic and solar cell devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stable High-Performance Perovskite Solar Cells via Grain Boundary Passivation.

PubMed

Niu, Tianqi; Lu, Jing; Munir, Rahim; Li, Jianbo; Barrit, Dounya; Zhang, Xu; Hu, Hanlin; Yang, Zhou; Amassian, Aram; Zhao, Kui; Liu, Shengzhong Frank

2018-04-01

The trap states at grain boundaries (GBs) within polycrystalline perovskite films deteriorate their optoelectronic properties, making GB engineering particularly important for stable high-performance optoelectronic devices. It is demonstrated that trap states within bulk films can be effectively passivated by semiconducting molecules with Lewis acid or base functional groups. The perovskite crystallization kinetics are studied using in situ synchrotron-based grazing-incidence X-ray scattering to explore the film formation mechanism. A model of the passivation mechanism is proposed to understand how the molecules simultaneously passivate the Pb-I antisite defects and vacancies created by under-coordinated Pb atoms. In addition, it also explains how the energy offset between the semiconducting molecules and the perovskite influences trap states and intergrain carrier transport. The superior optoelectronic properties are attained by optimizing the molecular passivation treatments. These benefits are translated into significant enhancements of the power conversion efficiencies to 19.3%, as well as improved environmental and thermal stability of solar cells. The passivated devices without encapsulation degrade only by ≈13% after 40 d of exposure in 50% relative humidity at room temperature, and only ≈10% after 24 h at 80 °C in controlled environment. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Direct Observation of Halide Migration and its Effect on the Photoluminescence of Methylammonium Lead Bromide Perovskite Single Crystals.

PubMed

Luo, Yanqi; Khoram, Parisa; Brittman, Sarah; Zhu, Zhuoying; Lai, Barry; Ong, Shyue Ping; Garnett, Erik C; Fenning, David P

2017-11-01

Optoelectronic devices based on hybrid perovskites have demonstrated outstanding performance within a few years of intense study. However, commercialization of these devices requires barriers to their development to be overcome, such as their chemical instability under operating conditions. To investigate this instability and its consequences, the electric field applied to single crystals of methylammonium lead bromide (CH 3 NH 3 PbBr 3 ) is varied, and changes are mapped in both their elemental composition and photoluminescence. Synchrotron-based nanoprobe X-ray fluorescence (nano-XRF) with 250 nm resolution reveals quasi-reversible field-assisted halide migration, with corresponding changes in photoluminescence. It is observed that higher local bromide concentration is correlated to superior optoelectronic performance in CH 3 NH 3 PbBr 3 . A lower limit on the electromigration rate is calculated from these experiments and the motion is interpreted as vacancy-mediated migration based on nudged elastic band density functional theory (DFT) simulations. The XRF mapping data provide direct evidence of field-assisted ionic migration in a model hybrid-perovskite thin single crystal, while the link with photoluminescence proves that the halide stoichiometry plays a key role in the optoelectronic properties of the perovskite. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Excitonic Materials for Hybrid Solar Cells and Energy Efficient Lighting

NASA Astrophysics Data System (ADS)

Kabra, Dinesh; Lu, Li Ping; Vaynzof, Yana; Song, Myounghoon; Snaith, Henry J.; Friend, Richard H.

2011-07-01

Conventional photovoltaic technology will certainly contribute this century, but to generate a significant fraction of our global power from solar energy, a radically new disruptive technology is required. Research primarily focused on developing the physics and technologies being low cost photovoltaic concepts are required. The materials with carbon-based solution processible organic semiconductors with power conversion efficiency as high as ˜8.2%, which have emerged over the last decade as promising alternatives to expensive silicon based technologies. We aim at exploring the morphological and optoelectronic properties of blends of newly synthesized polymer semiconductors as a route to enhance the performance of organic semiconductor based optoelectronic devices, like photovoltaic diodes (PV) and Light Emitting Diodes (LED). OLED efficiency has reached upto 150 lm/W and going to be next generation cheap and eco friendly solid state lighting solution. Hybrid electronics represent a valuable alternative for the production of easy processible, flexible and reliable optoelectronic thin film devices. I will be presenting recent advancement of my work in the area of hybrid photovoltaics, PLED and research path towards realization electrically injectable organic laser diodes.

Characterization of shape and deformation of MEMS by quantitative optoelectronic metrology techniques

NASA Astrophysics Data System (ADS)

Furlong, Cosme; Pryputniewicz, Ryszard J.

2002-06-01

Recent technological trends based on miniaturization of mechanical, electro-mechanical, and photonic devices to the microscopic scale, have led to the development of microelectromechanical systems (MEMS). Effective development of MEMS components requires the synergism of advanced design, analysis, and fabrication methodologies, and also of quantitative metrology techniques for characterizing their performance, reliability, and integrity during the electronic packaging cycle. In this paper, we describe opto-electronic techniques for measuring, with sub-micrometer accuracy, shape and changes in states of deformation of MEMS strictures. With the described opto-electronic techniques, it is possible to characterize MEMS components using the display and data modes. In the display mode, interferometric information related to shape and deformation is displayed at video frame rates, providing the capability for adjusting and setting experimental conditions. In the data mode, interferometric information related to shape and deformation is recorded as high-spatial and high-digital resolution images, which are further processed to provide quantitative 3D information. Furthermore, the quantitative 3D data are exported to computer-aided design (CAD) environments and utilized for analysis and optimization of MEMS devices. Capabilities of opto- electronic techniques are illustrated with representative applications demonstrating their applicability to provide indispensable quantitative information for the effective development and optimization of MEMS devices.

Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction.

PubMed

Ross, Jason S; Rivera, Pasqual; Schaibley, John; Lee-Wong, Eric; Yu, Hongyi; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jiaqiang; Mandrus, David; Cobden, David; Yao, Wang; Xu, Xiaodong

2017-02-08

Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p-n junctions in a MoSe 2 -WSe 2 heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p-n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. These results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.

Comprehensive study of the influence of different environments on degradation processes in F8BT: Correlating optoelectronic properties with Raman measurements

NASA Astrophysics Data System (ADS)

Linde, Sivan; Shikler, Rafi

2013-10-01

There is a growing interest in conjugated polymers from both industrial and academic points of views. The reasons are their tunable optoelectronic properties, ease of production, and excellent mechanical properties. However, the ease with which their optoelectronic properties are tunable make devices based on them prone to fast degradation and therefore, short life time. The issue of degradation of organic based optoelectronic devices is the topic of many ongoing researches. However, much less attention is given to degradation processes of the individual components of the devices and their dependence on the environmental conditions. In this work, we report on the degradation of a film of a polyfluorene block copolymer F8BT that is used in a variety of optoelectronic devices under different environments: Sun exposure, heating, and UV exposure in inert and ambient conditions. Degradation was observed in most of the optoelectronic properties of the film. Topographic measurements did not show observable changes of the film morphology following degradation. However, Raman spectroscopy measurements show changes that indicate degradation in one of the building blocks of the copolymer that is associated with electron's conduction. The absolute value of the correlation coefficient between the decrease in the Raman signal and the decrease in the optoelectronic properties is larger than 0.95 under sun exposure it is larger than 0.8 under all other ambient exposures and smaller than 0.65 under inert conditions. These results support the assumption that Oxygen, not necessarily through photo-oxidation, and also water play an important role in the degradation process and indicate the part of the polymer that is most susceptible to degradation.

Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect.

PubMed

Wang, Zhaona; Yu, Ruomeng; Wen, Xiaonan; Liu, Ying; Pan, Caofeng; Wu, Wenzhuo; Wang, Zhong Lin

2014-12-23

Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

Functionalized polyfluorenes for use in optoelectronic devices

DOEpatents

Chichak, Kelly Scott [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY

2011-11-01

The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

Electron and Phonon Engineered Nano- and Heterostructures for Increased Speed and Performance Enhancement of the Electronic and Optoelectronic Devices

DTIC Science & Technology

2011-01-01

doped source and drain form ohmic contact to metal silicide [2]-[6] due to their immunity to short channel effect [7]-[10]. In this project, we...investigated the hole mobility of SB Si NW. II. Device Fabrication Technology We prepared SiNWs by Au-catalyzed vapor-transport as described in Ref. [11...overlapping Ti/Au (70/50 nm) top gate is defined. Devices are characterized at this stage and also after annealing. III. Silicide Formation Our devices

High-Performance Near-Infrared Photodetectors Based on p-type SnX (X=S, Se) Nanowires Grown via Chemical Vapor Deposition.

PubMed

Zheng, Dingshan; Fang, Hehai; Long, Mingsheng; Wu, Feng; Wang, Peng; Gong, Fan; Wu, Xing; Ho, Johnny C; Liao, Lei; Hu, Weida

2018-06-21

Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) with semiconducting property have been demonstrated with tremendous potential for various technological applications, especially electronics and optoelectronics. However, until now, most of the state-of-the-art NW photodetectors are predominantly based on the N-type NW channel. Here, we successfully synthesized P-type SnSe and SnS NWs via chemical vapor deposition method and fabricated high-performance single SnSe and SnS NW photodetectors. Importantly, these two NW devices exhibit the impressive photodetection performance with the high photoconductive gain of 1.5 × 10 4 (2.8 × 10 4 ), good responsivity of 1.0× 10 4 A W -1 (1.6× 10 4 A W -1 ) as well as excellent detectivity of 3.3 × 10 12 Jones (2.4 × 10 12 Jones) under near-infrared illumination at a bias of 3 V for the SnSe NW (SnS NW) channel. The rise and fall times can be as efficient as 460 and 520 μs (1.2 and 15.1 ms), respectively, for the SnSe NW (SnS NW) device. Moreover, the spatially resolved photocurrent mapping of the devices further reveals the bias-dependent photocurrent generation. All these results evidently demonstrate that the P-type SnSe and SnS NWs have great potential to be applied in next-generation high-performance optoelectronic devices.

Epitaxial Technologies for SiGeSn High Performance Optoelectronic Devices

DTIC Science & Technology

2015-04-29

comparison for specific detectivity (D*) between GeSn and other market dominating infrared detectors in short wavelength infrared range. An improved...Fig. 22(b). For this set of devices wherein the dark current is high, the shot noise dominates over other noise mechanisms. As applied voltage...interdigitated electrodes to allow high responsivity and low noise current. Photodiodes: The team has developed GeSn photodiode detector , which is a

Multi-color Long Wavelength Infrared Detectors Based On III-V Semiconductors

DTIC Science & Technology

2010-07-30

both interband and intersubband transitions that form the basis of may optoelectronic devices. The research performed under this grant made it...based on interband and intersubband transitions in InAs and InGaAs QDs as a means for room temperature, multi-color photodetection in the visible...AM1.5 standard solar simulator. DOPING EFFECT ON INTERBAND AND INTERSUBBAND MULTICOLOR INFRARED PHOTODETECTORS: First, many samples and devices

GaAs Optoelectronic Integrated-Circuit Neurons

NASA Technical Reports Server (NTRS)

Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

1992-01-01

Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation.

PubMed

Islam, Abu Bashar Mohammad Hamidul; Shim, Jong-In; Shin, Dong-Soo

2018-05-07

We investigate the cause of the optoelectronic performance variations in InGaN/GaN multiple-quantum-well blue light-emitting diodes, using three different samples from an identical wafer grown on a c -plane sapphire substrate. Various macroscopic measurements have been conducted, revealing that with increasing strain in the quantum wells (QWs), the crystal quality improves with an increasing peak internal quantum efficiency while the droop becomes more severe. We propose to explain these variations using a model where the in-plane local potential fluctuation in QWs is considered. Our work is contrasted with prior works in that macroscopic measurements are utilized to find clues on the microscopic changes and their impacts on the device performances, which has been rarely attempted.

Fluorescence particle detection using microfluidics and planar optoelectronic elements

NASA Astrophysics Data System (ADS)

Kettlitz, Siegfried W.; Moosmann, Carola; Valouch, Sebastian; Lemmer, Uli

2014-05-01

Detection of fluorescent particles is an integral part of flow cytometry for analysis of selectively stained cells. Established flow cytometer designs achieve great sensitivity and throughput but require bulky and expensive components which prohibit mass production of small single-use point-of-care devices. The use of a combination of innovative technologies such as roll-to-roll printed microuidics with integrated optoelectronic components such as printed organic light emitting diodes and printed organic photodiodes enables tremendous opportunities in cost reduction, miniaturization and new application areas. In order to harvest these benefits, the optical setup requires a redesign to eliminate the need for lenses, dichroic mirrors and lasers. We investigate the influence of geometric parameters on the performance of a thin planar design which uses a high power LED as planar light source and a PIN-photodiode as planar detector. Due to the lack of focusing optics and inferior optical filters, the device sensitivity is not yet on par with commercial state of the art flow cytometer setups. From noise measurements, electronic and optical considerations we deduce possible pathways of improving the device performance. We identify that the sensitivity is either limited by dark noise for very short apertures or by noise from background light for long apertures. We calculate the corresponding crossover length. For the device design we conclude that a low device thickness, low particle velocity and short aperture length are necessary to obtain optimal sensitivity.

Engineering light emission of two-dimensional materials in both the weak and strong coupling regimes

NASA Astrophysics Data System (ADS)

Brotons-Gisbert, Mauro; Martínez-Pastor, Juan P.; Ballesteros, Guillem C.; Gerardot, Brian D.; Sánchez-Royo, Juan F.

2018-01-01

Two-dimensional (2D) materials have promising applications in optoelectronics, photonics, and quantum technologies. However, their intrinsically low light absorption limits their performance, and potential devices must be accurately engineered for optimal operation. Here, we apply a transfer matrix-based source-term method to optimize light absorption and emission in 2D materials and related devices in weak and strong coupling regimes. The implemented analytical model accurately accounts for experimental results reported for representative 2D materials such as graphene and MoS2. The model has been extended to propose structures to optimize light emission by exciton recombination in MoS2 single layers, light extraction from arbitrarily oriented dipole monolayers, and single-photon emission in 2D materials. Also, it has been successfully applied to retrieve exciton-cavity interaction parameters from MoS2 microcavity experiments. The present model appears as a powerful and versatile tool for the design of new optoelectronic devices based on 2D semiconductors such as quantum light sources and polariton lasers.

Distinct photoresponse in graphene induced by laser irradiation and interfacial gating.

NASA Astrophysics Data System (ADS)

Wang, Wenhui; Guo, Xitao; Nan, Haiyan; Ni, Zhenhua; Spectroscopy; Optoelectronics Group Team

Graphene-based photodetectors have recently received much attention due to its unique optical and electronic properties. The photoresponse modulation plays a crucial role in the study of photocurrent generation mechanism and optoelectronic applications. Here, the tunable p-p +-p junctions of graphene were fabricated through simple laser irradiation process. Distinct photoresponse was observed at the graphene (G)-laser irradiation graphene (LIG) junction. Detailed investigation suggests that the photo-thermoelectric effect, instead of the photovoltaic effect, dominates the photocurrent generation at the G-LIG junction. On the other hand, the localized interface states, existing at the silicon dioxide/lightly doped Si interface, would induce an interfacial gating mechanism, which will enhance the photoresponsivity to 1000 A/W. More important, the photoresponse time of our device has been pushed to 400ns. The current device structure does not need a complicated fabrication process and is fully compatible with silicon technology. This work will open up a route to graphene-based high-performance optoelectronic devices. This work was supported by Southeast University.

Advanced interdisciplinary undergraduate program: light engineering

NASA Astrophysics Data System (ADS)

Bakholdin, Alexey; Bougrov, Vladislav; Voznesenskaya, Anna; Ezhova, Kseniia

2016-09-01

The undergraduate educational program "Light Engineering" of an advanced level of studies is focused on development of scientific learning outcomes and training of professionals, whose activities are in the interdisciplinary fields of Optical engineering and Technical physics. The program gives practical experience in transmission, reception, storage, processing and displaying information using opto-electronic devices, automation of optical systems design, computer image modeling, automated quality control and characterization of optical devices. The program is implemented in accordance with Educational standards of the ITMO University. The specific features of the Program is practice- and problem-based learning implemented by engaging students to perform research and projects, internships at the enterprises and in leading Russian and international research educational centers. The modular structure of the Program and a significant proportion of variable disciplines provide the concept of individual learning for each student. Learning outcomes of the program's graduates include theoretical knowledge and skills in natural science and core professional disciplines, deep knowledge of modern computer technologies, research expertise, design skills, optical and optoelectronic systems and devices.

Highly efficient flexible optoelectronic devices using metal nanowire-conducting polymer composite transparent electrode

NASA Astrophysics Data System (ADS)

Jung, Eui Dae; Nam, Yun Seok; Seo, Houn; Lee, Bo Ram; Yu, Jae Choul; Lee, Sang Yun; Kim, Ju-Young; Park, Jang-Ung; Song, Myoung Hoon

2015-09-01

Here, we report a comprehensive analysis of the electrical, optical, mechanical, and surface morphological properties of composite nanostrutures based on silver nanowires (AgNW) and PEDOT:PSS conducting polymer for the use as flexible and transparent electrodes. Compared to ITO or the single material of AgNW or PEDOT:PSS, the AgNW/PEDOT:PSS composite electrode showed high electrical conductivity with a low sheet resistance of 26.8 Ω/sq at 91% transmittance (at 550 nm), improves surface smoothness, and enhances mechanical properties assisted by an amphiphilic fluoro-surfactant. The polymeric light-emitting diodes (PLEDs) and organic solar cells (OSCs) using the AgNW/PEDOT:PSS composite electrode showed higher device performances than those with AgNW and PEDOT:PSS electrodes and excellent flexibility under bending test. These results indicates that the AgNW/PEDOT:PSS composite presented is a good candidate as next-generation transparent elelctrodes for applications into flexible optoelectronic devices. [Figure not available: see fulltext.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Hyekyoung; Kim, Sungwoo; Luther, Joseph M.

Silver dimetal chalcogenide (Ag-V-VI 2) ternary quantum dots (QDs) are emerging lead-free materials for optoelectronic devices due to their NIR band gaps, large absorption coefficients, and superior electronic properties. However, thin film-based devices of the ternary QDs still lag behind due to the lack of understanding of the surface chemistry, compared to that of lead chalcogenide QDs even with the same crystal structure. Here in this paper, the surface ligand interactions of AgSbS 2 QDs, synthesized with 1-dodecanethiol used as a stabilizer, are studied. For nonpolar (1 0 0) surfaces, it is suggested that the thiolate ligands are associated withmore » the crystal lattices, thus preventing surface oxidation by protecting sulfur after air-exposure, as confirmed through optical and surface chemical analysis. Otherwise, silver rich (1 1 1) surfaces are passivated by thiolate ligands, allowing ligand exchange processes for the conductive films. This in-depth investigation of the surface chemistry of ternary QDs will prompt the performance enhancement of their optoelectronic devices.« less

Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification.

PubMed

Zhu, Tongtong; Liu, Yingjun; Ding, Tao; Fu, Wai Yuen; Jarman, John; Ren, Christopher Xiang; Kumar, R Vasant; Oliver, Rachel A

2017-03-27

Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. For many device applications, it is highly desirable to achieve not only high reflectivity and low absorption, but also good conductivity to allow effective electrical injection of charges. Here, we demonstrate the wafer-scale fabrication of highly reflective and conductive non-polar gallium nitride (GaN) DBRs, consisting of perfectly lattice-matched non-polar (11-20) GaN and mesoporous GaN layers that are obtained by a facile one-step electrochemical etching method without any extra processing steps. The GaN/mesoporous GaN DBRs exhibit high peak reflectivities (>96%) across the entire visible spectrum and wide spectral stop-band widths (full-width at half-maximum >80 nm), while preserving the material quality and showing good electrical conductivity. Such mesoporous GaN DBRs thus provide a promising and scalable platform for high performance GaN-based optoelectronic, photonic, and quantum photonic devices.

Black Phosphorus Quantum Dots for Hole Extraction of Typical Planar Hybrid Perovskite Solar Cells.

PubMed

Chen, Wei; Li, Kaiwen; Wang, Yao; Feng, Xiyuan; Liao, Zhenwu; Su, Qicong; Lin, Xinnan; He, Zhubing

2017-02-02

Black phosphorus, famous as two-dimensional (2D) materials, shows such excellent properties for optoelectronic devices such as tunable direct band gap, extremely high hole mobility (300-1000 cm 2 /(V s)), and so forth. In this Letter, facile processed black phosphorus quantum dots (BPQDs) were successfully applied to enhance hole extraction at the anode side of the typical p-i-n planar hybrid perovskite solar cells, which remarkably improved the performance of devices with photon conversion efficiency ramping up from 14.10 to 16.69%. Moreover, more detailed investigations by c-AFM, SKPM, SEM, hole-only devices, and photon physics measurements discover further the hole extraction effect and work mechanism of the BPQDs, such as nucleation assistance for the growth of large grain size perovskite crystals, fast hole extraction, more efficient hole transfer, and suppression of energy-loss recombination at the anode interface. This work definitely paves the way for discovering more and more 2D materials with high electronic properties to be used in photovoltaics and optoelectronics.

Extremely efficient internal exciton dissociation through edge states in layered 2D perovskites

NASA Astrophysics Data System (ADS)

Blancon, J.-C.; Tsai, H.; Nie, W.; Stoumpos, C. C.; Pedesseau, L.; Katan, C.; Kepenekian, M.; Soe, C. M. M.; Appavoo, K.; Sfeir, M. Y.; Tretiak, S.; Ajayan, P. M.; Kanatzidis, M. G.; Even, J.; Crochet, J. J.; Mohite, A. D.

2017-03-01

Understanding and controlling charge and energy flow in state-of-the-art semiconductor quantum wells has enabled high-efficiency optoelectronic devices. Two-dimensional (2D) Ruddlesden-Popper perovskites are solution-processed quantum wells wherein the band gap can be tuned by varying the perovskite-layer thickness, which modulates the effective electron-hole confinement. We report that, counterintuitive to classical quantum-confined systems where photogenerated electrons and holes are strongly bound by Coulomb interactions or excitons, the photophysics of thin films made of Ruddlesden-Popper perovskites with a thickness exceeding two perovskite-crystal units (>1.3 nanometers) is dominated by lower-energy states associated with the local intrinsic electronic structure of the edges of the perovskite layers. These states provide a direct pathway for dissociating excitons into longer-lived free carriers that substantially improve the performance of optoelectronic devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blancon, Jean -Christophe Robert; Tsai, Hsinhan; Nie, Wanyi

Understanding and controlling charge and energy flow in state-of-the-art semiconductor quantum wells has enabled high-efficiency optoelectronic devices. Two-dimensional (2D) Ruddlesden-Popper perovskites are solution-processed quantum wells wherein the band gap can be tuned by varying the perovskite-layer thickness, which modulates the effective electron-hole confinement. We report that, counterintuitive to classical quantum-confined systems where photogenerated electrons and holes are strongly bound by Coulomb interactions or excitons, the photophysics of thin films made of Ruddlesden-Popper perovskites with a thickness exceeding two perovskite-crystal units (>1.3 nanometers) is dominated by lower-energy states associated with the local intrinsic electronic structure of the edges of the perovskitemore » layers. Furthermore, these states provide a direct pathway for dissociating excitons into longer-lived free carriers that substantially improve the performance of optoelectronic devices.« less

Interlayer exciton optoelectronics in a 2D heterostructure p–n junction

DOE PAGES

Ross, Jason S.; Rivera, Pasqual; Schaibley, John; ...

2016-12-22

Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p–n junctions in a MoSe 2–WSe 2 heterobilayer. Applying a forward bias enablesmore » the first observation of electroluminescence from interlayer excitons. At zero bias, the p–n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. Lastly, these results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.« less

Integrated MEMS-based variable optical attenuator and 10Gb/s receiver

NASA Astrophysics Data System (ADS)

Aberson, James; Cusin, Pierre; Fettig, H.; Hickey, Ryan; Wylde, James

2005-03-01

MEMS devices can be successfully commercialized in favour of competing technologies only if they offer an advantage to the customer in terms of lower cost or increased functionality. There are limited markets where MEMS can be manufactured cheaper than similar technologies due to large volumes: automotive, printing technology, wireless communications, etc. However, success in the marketplace can also be realized by adding significant value to a system at minimal cost or leverging MEMS technology when other solutions simply will not work. This paper describes a thermally actuated, MEMS based, variable optical attenuator that is co-packaged with existing opto-electronic devices to develop an integrated 10Gb/s SONET/SDH receiver. The configuration of the receiver opto-electronics and relatively low voltage availability (12V max) in optical systems bar the use of LCD, EO, and electro-chromic style attenuators. The device was designed and fabricated using a silicon-on-insulator (SOI) starting material. The design and performance of the device (displacement, power consumption, reliability, physical geometry) was defined by the receiver parameters geometry. This paper will describe how these design parameters (hence final device geometry) were determined in light of both the MEMS device fabrication process and the receiver performance. Reference will be made to the design tools used and the design flow which was a joint effort between the MEMS vendor and the end customer. The SOI technology offered a robust, manufacturable solution that gave the required performance in a cost-effective process. However, the singulation of the devices required the development of a new singulation technique that allowed large volumes of silicon to be removed during fabrication yet still offer high singulation yields.

Human eye-inspired soft optoelectronic device using high-density MoS2-graphene curved image sensor array.

PubMed

Choi, Changsoon; Choi, Moon Kee; Liu, Siyi; Kim, Min Sung; Park, Ok Kyu; Im, Changkyun; Kim, Jaemin; Qin, Xiaoliang; Lee, Gil Ju; Cho, Kyoung Won; Kim, Myungbin; Joh, Eehyung; Lee, Jongha; Son, Donghee; Kwon, Seung-Hae; Jeon, Noo Li; Song, Young Min; Lu, Nanshu; Kim, Dae-Hyeong

2017-11-21

Soft bioelectronic devices provide new opportunities for next-generation implantable devices owing to their soft mechanical nature that leads to minimal tissue damages and immune responses. However, a soft form of the implantable optoelectronic device for optical sensing and retinal stimulation has not been developed yet because of the bulkiness and rigidity of conventional imaging modules and their composing materials. Here, we describe a high-density and hemispherically curved image sensor array that leverages the atomically thin MoS 2 -graphene heterostructure and strain-releasing device designs. The hemispherically curved image sensor array exhibits infrared blindness and successfully acquires pixelated optical signals. We corroborate the validity of the proposed soft materials and ultrathin device designs through theoretical modeling and finite element analysis. Then, we propose the ultrathin hemispherically curved image sensor array as a promising imaging element in the soft retinal implant. The CurvIS array is applied as a human eye-inspired soft implantable optoelectronic device that can detect optical signals and apply programmed electrical stimulation to optic nerves with minimum mechanical side effects to the retina.

Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: Energy transfer vs. optical coupling effects

DOE PAGES

Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D.; ...

2015-12-07

Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from themore » OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. Lastly, these results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.« less

Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: energy transfer vs. optical coupling effects.

PubMed

Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D; Nykypanchuk, Dmytro; Nam, Chang-Yong

2016-03-21

Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. These results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.

Ultrahigh Performance C60 Nanorod Large Area Flexible Photoconductor Devices via Ultralow Organic and Inorganic Photodoping

PubMed Central

Saran, Rinku; Stolojan, Vlad; Curry, Richard J.

2014-01-01

One dimensional single-crystal nanorods of C60 possess unique optoelectronic properties including high electron mobility, high photosensitivity and an excellent electron accepting nature. In addition, their rapid large scale synthesis at room temperature makes these organic semiconducting nanorods highly attractive for advanced optoelectronic device applications. Here, we report low-cost large-area flexible photoconductor devices fabricated using C60 nanorods. We demonstrate that the photosensitivity of the C60 nanorods can be enhanced ~400-fold via an ultralow photodoping mechanism. The photodoped devices offer broadband UV-vis-NIR spectral tuneability, exhibit a detectivitiy >109 Jones, an external quantum efficiency of ~100%, a linear dynamic range of 80 dB, a rise time 60 µs and the ability to measure ac signals up to ~250 kHz. These figures of merit combined are among the highest reported for one dimensional organic and inorganic large-area planar photoconductors and are competitive with commercially available inorganic photoconductors and photoconductive cells. With the additional processing benefits providing compatibility with large-area flexible platforms, these devices represent significant advances and make C60 nanorods a promising candidate for advanced photodetector technologies. PMID:24853479

Review of optoelectronic oscillators based on modelocked lasers and resonant tunneling diode optoelectronics

NASA Astrophysics Data System (ADS)

Ironside, C. N.; Haji, Mohsin; Hou, Lianping; Akbar, Jehan; Kelly, Anthony E.; Seunarine, K.; Romeira, Bruno; Figueiredo, José M. L.

2011-05-01

Optoelectronic oscillators can provide low noise oscillators at radio frequencies in the 0.5-40 GHz range and in this paper we review two recently introduced approaches to optoelectronic oscillators. Both approaches use an optical fibre feedback loop. One approach is based on passively modelocked laser diodes and in a 40 GHz oscillator achieves up to 30 dB noise reduction. The other approach is based on resonant tunneling diode optoelectronic devices and in a 1.4 GHz oscillator can achieve up to 30 dB noise reduction.

Rapidly-Indexing Incremental-Angle Encoder

NASA Technical Reports Server (NTRS)

Christon, Philip R.; Meyer, Wallace W.

1989-01-01

Optoelectronic system measures relative angular position of shaft or other device to be turned, also measures absolute angular position after device turned through small angle. Relative angular position measured with fine resolution by optoelectronically counting finely- and uniformly-spaced light and dark areas on encoder disk as disk turns past position-sensing device. Also includes track containing coarsely- and nonuniformly-spaced light and dark areas, angular widths varying in proportion to absolute angular position. This second track provides gating and indexing signal.

Optoelectronic devices product assurance guideline for space application

NASA Astrophysics Data System (ADS)

Bensoussan, A.; Vanzi, M.

2017-11-01

New opportunities are emerging for the implementation of hardware sub-systems based on OptoElectronic Devices (OED) for space application. Since the end of this decade the main players for space systems namely designers and users including Industries, Agencies, Manufacturers and Laboratories are strongly demanding of adequate strategies to qualify and validate new optoelectronics products and sub-systems [1]. The long term space application mission will require to address either inter-satellite link (free space communication, positioning systems, tracking) or intra-satellite connectivity/flexibility/reconfigurability or high volume of data transfer between equipment installed into payload.

Development and Performance Analysis of a Photonics-Assisted RF Converter for 5G Applications

NASA Astrophysics Data System (ADS)

Borges, Ramon Maia; Muniz, André Luiz Marques; Sodré Junior, Arismar Cerqueira

2017-03-01

This article presents a simple, ultra-wideband and tunable radiofrequency (RF) converter for 5G cellular networks. The proposed optoelectronic device performs broadband photonics-assisted upconversion and downconversion using a single optical modulator. Experimental results demonstrate RF conversion from DC to millimeter waves, including 28 and 38 GHz that are potential frequency bands for 5G applications. Narrow linewidth and low phase noise characteristics are observed in all generated RF carriers. An experimental digital performance analysis using different modulation schemes illustrates the applicability of the proposed photonics-based device in reconfigurable optical wireless communications.

Flexible Transparent Conductive Films with High Performance and Reliability Using Hybrid Structures of Continuous Metal Nanofiber Networks for Flexible Optoelectronics.

PubMed

Park, Juyoung; Hyun, Byung Gwan; An, Byeong Wan; Im, Hyeon-Gyun; Park, Young-Geun; Jang, Junho; Park, Jang-Ung; Bae, Byeong-Soo

2017-06-21

We report an Ag nanofiber-embedded glass-fabric reinforced hybrimer (AgNF-GFRHybrimer) composite film as a reliable and high-performance flexible transparent conducting film. The continuous AgNF network provides superior optoelectronic properties of the composite film by minimizing transmission loss and junction resistance. In addition, the excellent thermal/chemical stability and mechanical durability of the GFRHybrimer matrix provides enhanced mechanical durability and reliability of the final AgNF-GFRHybrimer composite film. To demonstrate the availability of our AgNF-GFRHybrimer composite as a transparent conducting film, we fabricated a flexible organic light-emitting diode (OLED) device on the AgNF-GFRHybrimer film; the OLED showed stable operation during a flexing.

Gallium Arsenide Monolithic Optoelectronic Circuits

NASA Astrophysics Data System (ADS)

Bar-Chaim, N.; Katz, J.; Margalit, S.; Ury, I.; Wilt, D.; Yariv, A.

1981-07-01

The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate.

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

DOEpatents

University of Illinois

2009-04-21

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

DOEpatents

Rogers, John A [Champaign, IL; Khang, Dahl-Young [Seoul, KR; Sun, Yugang [Naperville, IL; Menard, Etienne [Durham, NC

2012-06-12

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

DOEpatents

Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne

2014-06-17

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

DOEpatents

Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne

2016-12-06

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

DOEpatents

Rogers, John A.; Khang, Dahl -Young; Sun, Yugang; Menard, Etienne

2015-08-11

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Failure Mode/Mechanism Distributions

DTIC Science & Technology

1991-09-01

circuits , hybrids, discrete semiconductors, microwave devices, optoelectronics and nonelectronic parts employed in military, space, industrial and...FMEA may be performed as a hardware analysis, a functional analysis, or a combination analysis and is ideally initiated at the part, circuit or...by a single replaceable module , a separate FMEA could be performed on the internal functions of the module , viewing the module as a system. The level

Visualizing Carrier Transport in Metal Halide Perovskite Nanoplates via Electric Field Modulated Photoluminescence Imaging.

PubMed

Hu, Xuelu; Wang, Xiao; Fan, Peng; Li, Yunyun; Zhang, Xuehong; Liu, Qingbo; Zheng, Weihao; Xu, Gengzhao; Wang, Xiaoxia; Zhu, Xiaoli; Pan, Anlian

2018-05-09

Metal halide perovskite nanostructures have recently been the focus of intense research due to their exceptional optoelectronic properties and potential applications in integrated photonics devices. Charge transport in perovskite nanostructure is a crucial process that defines efficiency of optoelectronic devices but still requires a deep understanding. Herein, we report the study of the charge transport, particularly the drift of minority carrier in both all-inorganic CsPbBr 3 and organic-inorganic hybrid CH 3 NH 3 PbBr 3 perovskite nanoplates by electric field modulated photoluminescence (PL) imaging. Bias voltage dependent elongated PL emission patterns were observed due to the carrier drift at external electric fields. By fitting the drift length as a function of electric field, we obtained the carrier mobility of about 28 cm 2 V -1 S -1 in the CsPbBr 3 perovskite nanoplate. The result is consistent with the spatially resolved PL dynamics measurement, confirming the feasibility of the method. Furthermore, the electric field modulated PL imaging is successfully applied to the study of temperature-dependent carrier mobility in CsPbBr 3 nanoplates. This work not only offers insights for the mobile carrier in metal halide perovskite nanostructures, which is essential for optimizing device design and performance prediction, but also provides a novel and simple method to investigate charge transport in many other optoelectronic materials.

Characterizing the local optoelectronic performance of organic solar cells with scanning-probe microscopy

NASA Astrophysics Data System (ADS)

Coffey, David C.

2007-12-01

Conjugated polymers, small molecules, and colloidal semiconductor nanocrystals are promising materials for use in low-cost, thin-film solar cells. The photovoltaic performance of these materials, however, is highly dependent on film structure, and directly correlating local film structures with device performance remains challenging. This dissertation describes several techniques we have developed to probe and control the local optoelectronic properties of organic semiconducting films. First, with an aim of rapidly fabricating photovoltaic films with varying morphology, we demonstrate that Dip-Pen Nanolithography (DPN) can be used to control nanoscale phase separation with sub-150 nm lateral resolution in polymer films that are 20--80 nm thick. This control is based on writing monolayer chemical templates that nucleate phase separation, and we use this technique to study heterogeneous nucleation in thin films. Second, we use time-resolved electrostatic force microscopy (trEFM) to measure photoexcited charge in polymer films with a resolution of 100 nm and 100 mus. We show that such data can predict the external quantum efficiencies of polymer photodiodes, and can thus link device performance with local optoelectronic properties. When applied to the study of blended polyfluorene films, we show that domain centers can buildup charge faster then domain interfaces, which indicates that polymer/polymer blend devices should be modeled as having impure donor/acceptor domains. Third, we use photoconductive atomic force microscopy (pcAFM) to map local photocurrents with 20 nm-resolution in polymer/fullerene solar cells- achieving an order of magnitude better resolution than previous techniques. We present photocurrent maps under short-circuit conditions (zero applied bias), as well as under various applied voltages. We find significant variations in the short-circuit current between regions that appear identical in AFM topography. These variations occur from one domain to another, as well as on larger length scales incorporating multiple domains. Our results suggest that organic solar cells can be significantly improved with better donor/acceptor structuring.

Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices

NASA Astrophysics Data System (ADS)

Higurashi, Eiji

2018-04-01

Heterogeneous integration is an attractive approach to manufacturing future optoelectronic devices. Recent progress in low-temperature bonding techniques such as plasma activation bonding (PAB) and surface-activated bonding (SAB) enables a new approach to integrating dissimilar materials for a wide range of photonics applications. In this paper, low-temperature direct bonding and intermediate layer bonding techniques are focused, and their state-of-the-art applications in optoelectronic devices are reviewed. First, we describe the room-temperature direct bonding of Ge/Ge and Ge/Si wafers for photodetectors and of GaAs/SiC wafers for high-power semiconductor lasers. Then, we describe low-temperature intermediate layer bonding using Au and lead-free Sn-3.0Ag-0.5Cu solders for optical sensors and MEMS packaging.

Diffusion of excitons in materials for optoelectronic device applications

NASA Astrophysics Data System (ADS)

Singh, Jai; Narayan, Monishka Rita; Ompong, David

2015-06-01

The diffusion of singlet excitonsis known to occur through the Förster resonance energy transfer (FRET) mechanism and that of singlet and triplet excitonscan occur through the Dexter carrier transfer mechanism. It is shown here that if a material possesses the strong exciton-spin-orbit-photon interaction then triplet excitonscan also be transported /diffused through a mechanism like FRET. The theory is applicable to the diffusion of excitonsin optoelectronic devices like organic solar cells, organic light emitting devices and inorganic scintillators.

III-V Compounds and Alloys: An Update.

PubMed

Woodall, J M

1980-05-23

The III-V compounds and alloys have been studied for three decades. Until recently, these materials have been commercialized for only a few specialized optoelectronic devices and microwave devices. Advances in thin-film epitaxy techniques, such as liquid phase epitaxy and chemical vapor deposition, are now providing the ability to form good quality lattice-matched heterojunctions with III-V materials. New optoelectronic devices, such as room-temperature continuous-wave injection lasers, have already resulted. This newfound ability may also affect the field of highspeed integrated circuits.

Boosting Two-Dimensional MoS2/CsPbBr3 Photodetectors via Enhanced Light Absorbance and Interfacial Carrier Separation.

PubMed

Song, Xiufeng; Liu, Xuhai; Yu, Dejian; Huo, Chengxue; Ji, Jianping; Li, Xiaoming; Zhang, Shengli; Zou, Yousheng; Zhu, Gangyi; Wang, Yongjin; Wu, Mingzai; Xie, An; Zeng, Haibo

2018-01-24

Transition metal dichalcogenides (TMDs) are promising candidates for flexible optoelectronic devices because of their special structures and excellent properties, but the low optical absorption of the ultrathin layers greatly limits the generation of photocarriers and restricts the performance. Here, we integrate all-inorganic perovskite CsPbBr 3 nanosheets with MoS 2 atomic layers and take the advantage of the large absorption coefficient and high quantum efficiency of the perovskites, to achieve excellent performance of the TMD-based photodetectors. Significantly, the interfacial charge transfer from the CsPbBr 3 to the MoS 2 layer has been evidenced by the observed photoluminescence quenching and shortened decay time of the hybrid MoS 2 /CsPbBr 3 . Resultantly, such a hybrid MoS 2 /CsPbBr 3 photodetector exhibits a high photoresponsivity of 4.4 A/W, an external quantum efficiency of 302%, and a detectivity of 2.5 × 10 10 Jones because of the high efficient photoexcited carrier separation at the interface of MoS 2 and CsPbBr 3 . The photoresponsivity of this hybrid device presents an improvement of 3 orders of magnitude compared with that of a MoS 2 device without CsPbBr 3 . The response time of the device is also shortened from 65.2 to 0.72 ms after coupling with MoS 2 layers. The combination of the all-inorganic perovskite layer with high photon absorption and the carrier transport TMD layer may pave the way for novel high-performance optoelectronic devices.

Semiconductor quantum wells: old technology or new device functionalities

NASA Astrophysics Data System (ADS)

Kolbas, R. M.; Lo, Y. C.; Hsieh, K. Y.; Lee, J. H.; Reed, F. E.; Zhang, D.; Zhang, T.

2009-08-01

The introduction of semiconductor quantum wells in the 1970s created a revolution in optoelectronic devices. A large fraction of today's lasers and light emitting diodes are based on quantum wells. It has been more than 30 years but novel ideas and new device functions have recently been demonstrated using quantum well heterostructures. This paper provides a brief overview of the subject and then focuses on the physics of quantum wells that the lead author believes holds the key to new device functionalities. The data and figures contained within are not new. They have been assembled from 30 years of work. They are presented to convey the story of why quantum wells continue to fuel the engine that drives the semiconductor optoelectronic business. My apologies in advance to my students and co-workers that contributed so much that could not be covered in such a short manuscript. The explanations provided are based on the simplest models possible rather than the very sophisticated mathematical models that have evolved over many years. The intended readers are those involved with semiconductor optoelectronic devices and are interested in new device possibilities.

Photonics: Technology project summary

NASA Technical Reports Server (NTRS)

Depaula, Ramon P.

1991-01-01

Photonics involves the use of light (photons) in conjunction with electronics for applications in communications, computing, control, and sensing. Components used in photonic systems include lasers, optical detectors, optical wave guide devices, fiber optics, and traditional electronic devices. The goal of this program is to develop hybrid optoelectronic devices and systems for sensing, information processing, communications, and control. It is hoped that these new devices will yield at least an order of magnitude improvement in performance over existing technology. The objective of the program is to conduct research and development in the following areas: (1) materials and devices; (2) networking and computing; (3) optical processing/advanced pattern recognition; and (4) sensing.

Extremely efficient internal exciton dissociation through edge states in layered 2D perovskites

DOE PAGES

Blancon, Jean -Christophe Robert; Tsai, Hsinhan; Nie, Wanyi; ...

2017-03-09

Understanding and controlling charge and energy flow in state-of-the-art semiconductor quantum wells has enabled high-efficiency optoelectronic devices. Two-dimensional (2D) Ruddlesden-Popper perovskites are solution-processed quantum wells wherein the band gap can be tuned by varying the perovskite-layer thickness, which modulates the effective electron-hole confinement. We report that, counterintuitive to classical quantum-confined systems where photogenerated electrons and holes are strongly bound by Coulomb interactions or excitons, the photophysics of thin films made of Ruddlesden-Popper perovskites with a thickness exceeding two perovskite-crystal units (>1.3 nanometers) is dominated by lower-energy states associated with the local intrinsic electronic structure of the edges of the perovskitemore » layers. Furthermore, these states provide a direct pathway for dissociating excitons into longer-lived free carriers that substantially improve the performance of optoelectronic devices.« less

High-Pressure Band-Gap Engineering in Lead-Free Cs 2 AgBiBr 6 Double Perovskite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Qian; Wang, Yonggang; Pan, Weicheng

Novel inorganic lead-free double perovskites with improved stability are regarded as alternatives to state-of-art hybrid lead halide perovskites in photovoltaic devices. The recently discovered Cs2AgBiBr6 double perovskite exhibits attractive optical and electronic features, making it promising for various optoelectronic applications. However, its practical performance is hampered by the large band gap. In this work, remarkable band gap narrowing of Cs2AgBiBr6 is, for the first time, achieved on inorganic photovoltaic double perovskites through high pressure treatments. Moreover, the narrowed band gap is partially retainable after releasing pressure, promoting its optoelectronic applications. This work not only provides novel insights into the structure–propertymore » relationship in lead-free double perovskites, but also offers new strategies for further development of advanced perovskite devices.« less

Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

PubMed Central

Botiz, Ioan; Stingelin, Natalie

2014-01-01

It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. PMID:28788568

Feature issue introduction: halide perovskites for optoelectronics.

PubMed

White, Thomas P; Deleporte, Emmanuelle; Sum, Tze-Chien

2018-01-22

This joint Optics Express and Optical Materials Express feature issue presents a collection of nine papers on the topic of halide perovskites for optoelectronics. Perovskite materials have attracted significant attention over the past four years, initially for their outstanding performance in thin film solar cells, but more recently for applications in light-emitting devices (LEDs and lasers), photodetectors and nonlinear optics. At the same time, there is still much more to learn about the fundamental properties of these materials, and how these depend on composition, processing, and exposure to the environment. This feature issue provides a snapshot of some of the latest research in this rapidly-evolving multidisciplinary field.

High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

NASA Technical Reports Server (NTRS)

Connolly, J. C.; Goldstein, B.; Pultz, G. N.; Slavin, S. E.; Carlin, D. B.; Ettenberg, M.

1988-01-01

A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

Optoelectronic devices, plasmonics, and photonics with topological insulators

NASA Astrophysics Data System (ADS)

Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.

2017-03-01

Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.

Optoelectronic characteristics of MEH-PPV + BT blend thin films in polymer light emitting diodes

NASA Astrophysics Data System (ADS)

Massah Bidgoli, M.; Mohsennia, M.; Akbari Boroumand, F.; Mohsen Nia, A.

2015-06-01

Due to the unique optical and electronic properties of conjugated polymers, much research has been conducted to study the effect of the incorporation of electron-transporting materials on the polymer blends’ compatibility and their capability for use in optoelectronic devices. In this work, to characterize the optoelectronic properties of blend thin films of poly [2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) with benzothiadiazole (BT), polymer light- emitting diodes (PLEDs) with single-emission layers of MEH-PPV + BT blends have been fabricated. The influence of MEH-PPV + BT blend weight ratios over ITO/PEDOT:PSS/MEH-PPV + BT/Al PLEDs performances, e.g., lifetime, turn-on voltage, and current density-voltage (J-V) characteristics, has been studied. According to the obtained results, the turn-on voltage of the devices successfully decreased with the addition of the BT as an electronic transportation material. At an optimum condition, we obtained a turn-on voltage as low as 5 V and a lifetime of about 190 h for a device incorporating 65% BT. The logarithmic plots of the J-V characteristics of the fabricated devices showed a power law behavior (J ∝ Vk+1) with three distinct regions. The J-V characteristics have been explained by the Fowler-Nordheim (FN) tunneling model. It was found that the hole-injection barrier height decreases with increasing BT content in the range of 0-65%. According to the obtained results, in all of our investigations, the electroluminescence (EL) originated exclusively from the MEH-PPV material, even for the high BT contents.

Photo-Detection on Narrow-Bandgap High-Mobility 2D Semiconductors

NASA Astrophysics Data System (ADS)

Charnas, Adam; Qiu, Gang; Deng, Yexin; Wang, Yixiu; Du, Yuchen; Yang, Lingming; Wu, Wenzhuo; Ye, Peide

Photo-detection and energy harvesting device concepts have been demonstrated widely in 2D materials such as graphene, TMDs, and black phosphorus. In this work, we demonstrate anisotropic photo-detection achieved using devices fabricated from hydrothermally grown narrow-bandgap high-mobility 2D semiconductor. Back-gated FETs were fabricated by transferring the 2D flakes onto a Si/SiO2 substrate and depositing various metal contacts across the flakes to optimize the access resistance for optoelectronic devices. Photo-responsivity was measured and mapped by slightly biasing the devices and shining a laser spot at different locations of the device to observe and map the resulting photo-generated current. Optimization of the Schottky barrier height for both n and p at the metal-2D interfaces using asymmetric contact engineering was performed to improve device performance.

Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

NASA Technical Reports Server (NTRS)

Collis, Ward J.; Abul-Fadl, Ali

1988-01-01

The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

Deterministic growth of AgTCNQ and CuTCNQ nanowires on large-area reduced graphene oxide films for flexible optoelectronics.

PubMed

Zhang, Shuai; Lu, Zhufeng; Gu, Li; Cai, Liling; Cao, Xuebo

2013-11-22

We describe a synchronous reduction and assembly procedure to directly produce large-area reduced graphene oxide (rGO) films sandwiched by a high density of metal nanoparticles (silver and copper). Further, by using the sandwiched metal NPs as sources, networks consisting of AgTCNQ and CuTCNQ nanowires were deterministically grown from the rGO films, forming structurally and functionally integrated rGO/metal-TCNQ hybrid films with outstanding flexibility, bending endurance, and electrical stability. Interestingly, due to the p-type nature of the rGO film and the n-type nature of the metal-TCNQ NWs, the hybrid films are essentially thin-film p-n junctions which are useful in ubiquitous electronics and optoelectronics. Measurements of the optoelectronic properties demonstrate that the rGO/metal-TCNQ hybrid films exhibit substantial photoconductivity and highly reproducible photoswitching behaviours. The present approach may open the door to the versatile and deterministic integration of functional nanostructures into flexible conducting substrates and provide an important step towards producing low-cost and high-performance soft electronic and optoelectronic devices.

High-Quality AZO/Au/AZO Sandwich Film with Ultralow Optical Loss and Resistivity for Transparent Flexible Electrodes.

PubMed

Zhou, Hua; Xie, Jing; Mai, Manfang; Wang, Jing; Shen, Xiangqian; Wang, Shuying; Zhang, Lihua; Kisslinger, Kim; Wang, Hui-Qiong; Zhang, Jinxing; Li, Yu; Deng, Junhong; Ke, Shanming; Zeng, Xierong

2018-05-09

Transparent flexible electrodes are in ever-growing demand for modern stretchable optoelectronic devices, such as display technologies, solar cells, and smart windows. Such sandwich-film-electrodes deposited on polymer substrates are unattainable because of the low quality of the films, inducing a relatively large optical loss and resistivity as well as a difficulty in elucidating the interference behavior of light. In this article, we report a high-quality AZO/Au/AZO sandwich film with excellent optoelectronic performance, e.g., an average transmittance of about 81.7% (including the substrate contribution) over the visible range, a sheet resistance of 5 Ω/sq, and a figure-of-merit (FoM) factor of ∼55.1. These values are well ahead of those previously reported for sandwich-film-electrodes. Additionally, the interference behaviors of light modulated by the coat and metal layers have been explored with the employment of transmittance spectra and numerical simulations. In particular, a heater device based on an AZO/Au/AZO sandwich film exhibits high performance such as short response time (∼5 s) and uniform temperature field. This work provides a deep insight into the improvement of the film quality of the sandwich electrodes and the design of high-performance transparent flexible devices by the application of a flexible substrate with an atomically smooth surface.

Cation Dynamics Governed Thermal Properties of Lead Halide Perovskite Nanowires.

PubMed

Wang, Yuxi; Lin, Renxing; Zhu, Pengchen; Zheng, Qinghui; Wang, Qianjin; Li, Deyu; Zhu, Jia

2018-05-09

Metal halide perovskite (MHP) nanowires such as hybrid organic-inorganic CH 3 NH 3 PbX 3 (X = Cl, Br, I) have drawn significant attention as promising building blocks for high-performance solar cells, light-emitting devices, and semiconductor lasers. However, the physics of thermal transport in MHP nanowires is still elusive even though it is highly relevant to the device thermal stability and optoelectronic performance. Through combined experimental measurements and theoretical analyses, here we disclose the underlying mechanisms governing thermal transport in three different kinds of lead halide perovskite nanowires (CH 3 NH 3 PbI 3 , CH 3 NH 3 PbBr 3 and CsPbBr 3 ). It is shown that the thermal conductivity of CH 3 NH 3 PbBr 3 nanowires is significantly suppressed as compared to that of CsPbBr 3 nanowires, which is attributed to the cation dynamic disorder. Furthermore, we observed different temperature-dependent thermal conductivities of hybrid perovskites CH 3 NH 3 PbBr 3 and CH 3 NH 3 PbI 3 , which can be attributed to accelerated cation dynamics in CH 3 NH 3 PbBr 3 at low temperature and the combined effects of lower phonon group velocity and higher Umklapp scattering rate in CH 3 NH 3 PbI 3 at high temperature. These data and understanding should shed light on the design of high-performance MHP based thermal and optoelectronic devices.

Purely Organic Thermally Activated Delayed Fluorescence Materials for Organic Light-Emitting Diodes.

PubMed

Wong, Michael Y; Zysman-Colman, Eli

2017-06-01

The design of thermally activated delayed fluorescence (TADF) materials both as emitters and as hosts is an exploding area of research. The replacement of phosphorescent metal complexes with inexpensive organic compounds in electroluminescent (EL) devices that demonstrate comparable performance metrics is paradigm shifting, as these new materials offer the possibility of developing low-cost lighting and displays. Here, a comprehensive review of TADF materials is presented, with a focus on linking their optoelectronic behavior with the performance of the organic light-emitting diode (OLED) and related EL devices. TADF emitters are cross-compared within specific color ranges, with a focus on blue, green-yellow, orange-red, and white OLEDs. Organic small-molecule, dendrimer, polymer, and exciplex emitters are all discussed within this review, as is their use as host materials. Correlations are provided between the structure of the TADF materials and their optoelectronic properties. The success of TADF materials has ushered in the next generation of OLEDs. © 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of thermochemical treatment on CuSbS 2 photovoltaic absorber quality and solar cell reproducibility

DOE PAGES

de Souza Lucas, Francisco Willian; Welch, Adam W.; Baranowski, Lauryn L.; ...

2016-08-01

CuSbS 2 is a promising nontoxic and earth-abundant photovoltaic absorber that is chemically simpler than the widely studied Cu 2ZnSnS 4. However, CuSbS 2 photovoltaic (PV) devices currently have relatively low efficiency and poor reproducibility, often due to suboptimal material quality and insufficient optoelectronic properties. To address these issues, here we develop a thermochemical treatment (TT) for CuSbS 2 thin films, which consists of annealing in Sb 2S 3 vapor followed by a selective KOH surface chemical etch. The annealed CuSbS 2 films show improved structural quality and optoelectronic properties, such as stronger band-edge photoluminescence and longer photoexcited carrier lifetime.more » These improvements also lead to more reproducible CuSbS 2 PV devices, with performance currently limited by a large cliff-type interface band offset with CdS contact. Altogether, these results point to the potential avenues to further increase the performance of CuSbS 2 thin film solar cell, and the findings can be transferred to other thin film photovoltaic technologies.« less

Incorporating fluorinated moieties in fully conjugated donor-acceptor block copolymers

NASA Astrophysics Data System (ADS)

Lee, Youngmin; Wang, Qing; Gomez, Enrique D.

Fully conjugated donor-acceptor block copolymers are promising candidates for photovoltaics due to their ability to microphase separate at length scales commensurate with exciton diffusion lengths. These materials can also serve as model systems to study the relationship between molecular structure, microstructure, and optoelectronic properties of conjugated polymers. The development of new donor-acceptor block copolymers relies on the manipulation of the chemical structure to fine tune properties and improve overall performance when employed in photovoltaic devices. To this end, we have demonstrated the incorporation of fluorinated moieties in conjugated block copolymers. The introduction of fluorine, a strong electron withdrawing element, is known to influence phase separation and the bandgap, and as a result, optoelectronic properties. Fluorine was introduced to the acceptor block of poly(3-hexylthiophene-2,5-diyl)-block-poly((9,9-bis(2-octyl)fluorene-2,7-diyl)-alt-(4,7-di(thiophene-2-yl)-2,1,3-benzothiadiazole)-5 ',5?-diyl) (P3HT- b-PFTBT). PFTBTs were prepared with di-fluorinated and mono-fluorinated TBT. We find that fluorination impacts the bandgap, morphology and performance in devices.

Strong electrically tunable MoTe2/graphene van der Waals heterostructures for high-performance electronic and optoelectronic devices

NASA Astrophysics Data System (ADS)

Wang, Feng; Yin, Lei; Wang, Zhenxing; Xu, Kai; Wang, Fengmei; Shifa, Tofik Ahmed; Huang, Yun; Wen, Yao; Jiang, Chao; He, Jun

2016-11-01

MoTe2 is an emerging two-dimensional layered material showing ambipolar/p-type conductivity, which makes it an important supplement to n-type two-dimensional layered material like MoS2. However, the properties based on its van der Waals heterostructures have been rarely studied. Here, taking advantage of the strong Fermi level tunability of monolayer graphene (G) and the feature of van der Waals interfaces that is free from Fermi level pinning effect, we fabricate G/MoTe2/G van der Waals heterostructures and systematically study the electronic and optoelectronic properties. We demonstrate the G/MoTe2/G FETs with low Schottky barriers for both holes (55.09 meV) and electrons (122.37 meV). Moreover, the G/MoTe2/G phototransistors show high photoresponse performances with on/off ratio, responsivity, and detectivity of ˜105, 87 A/W, and 1012 Jones, respectively. Finally, we find the response time of the phototransistors is effectively tunable and a mechanism therein is proposed to explain our observation. This work provides an alternative choice of contact for high-performance devices based on p-type and ambipolar two-dimensional layered materials.

Light-induced lattice expansion leads to high-efficiency perovskite solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Hsinhan; Asadpour, Reza; Blancon, Jean-Christophe

Hybrid-perovskite based high-performance optoelectronic devices and clues from their operation has led to the realization that light-induced structural dynamics play a vital role on their physical properties, device performance and stability. Here, we report that continuous light illumination leads to a uniform lattice expansion in hybrid perovskite thin-films, which is critical for obtaining high-efficiency photovoltaic devices. Correlated, in-situ structural and device characterizations reveal that light-induced lattice expansion significantly benefits the performances of a mixed-cation pure-halide planar device, boosting the power conversion efficiency from 18.5% to 20.5%. This is a direct consequence of the relaxation of local lattice strains during latticemore » expansion, which results in the reduction of the energetic barriers at the perovskite/contact interfaces in devices, thus improving the open circuit voltage and fill factor. The light-induced lattice expansion stabilizes these high-efficiency photovoltaic devices under continuous operation of full-spectrum 1-Sun illumination for over 1500 hours. One Sentence Summary: Light-induced lattice expansion improves crystallinity, relaxes lattice strain, which enhances photovoltaic performance in hybrid perovskite device.« less

JSEP Fellowship

DTIC Science & Technology

1993-06-28

entitled "MBE Grown Microcavities for Optoelectronic Devices." In the dissertation work,1 the precision of molecular - beam epitaxy (MBE) is taken...Layers For Surface Normal Optoelectronic Devices," North American Conference on Molecular Beam Epitaxy , Ottawa, Canada, October 12-14, 1992, to be...8. C. Lei, T. J. Rogers, D. G. Deppe, and B. G. Streetman, "InGaAs-GaAs Quantum Well Vertical-Cavity Surface-Emitting Laser Using Molecular Beam

Hot carrier-enhanced interlayer electron-hole pair multiplication in 2D semiconductor heterostructure photocells

NASA Astrophysics Data System (ADS)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger K.; Aji, Vivek; Gabor, Nathaniel M.

2017-12-01

Strong electronic interactions can result in novel particle-antiparticle (electron-hole, e-h) pair generation effects, which may be exploited to enhance the photoresponse of nanoscale optoelectronic devices. Highly efficient e-h pair multiplication has been demonstrated in several important nanoscale systems, including nanocrystal quantum dots, carbon nanotubes and graphene. The small Fermi velocity and nonlocal nature of the effective dielectric screening in ultrathin layers of transition-metal dichalcogenides (TMDs) indicates that e-h interactions are very strong, so high-efficiency generation of e-h pairs from hot electrons is expected. However, such e-h pair multiplication has not been observed in 2D TMD devices. Here, we report the highly efficient multiplication of interlayer e-h pairs in 2D semiconductor heterostructure photocells. Electronic transport measurements of the interlayer I-VSD characteristics indicate that layer-indirect e-h pairs are generated by hot-electron impact excitation at temperatures near T = 300 K. By exploiting this highly efficient interlayer e-h pair multiplication process, we demonstrate near-infrared optoelectronic devices that exhibit 350% enhancement of the optoelectronic responsivity at microwatt power levels. Our findings, which demonstrate efficient carrier multiplication in TMD-based optoelectronic devices, make 2D semiconductor heterostructures viable for a new class of ultra-efficient photodetectors based on layer-indirect e-h excitations.

Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics.

PubMed

Madéo, Julien; Margiolakis, Athanasios; Zhao, Zhen-Yu; Hale, Peter J; Man, Michael K L; Zhao, Quan-Zhong; Peng, Wei; Shi, Wang-Zhou; Dani, Keshav M

2015-07-15

We report on the first terahertz (THz) emitter based on femtosecond-laser-ablated gallium arsenide (GaAs), demonstrating a 65% enhancement in THz emission at high optical power compared to the nonablated device. Counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. We understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. Our results show that laser ablation allows for efficient and cost-effective optoelectronic THz devices via the manipulation of fundamental properties of materials.

Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures

PubMed Central

Wen, Yao; Cai, Kaiming; Cheng, Ruiqing; Yin, Lei; Zhang, Yu; Li, Jie; Wang, Zhenxing; Wang, Feng; Wang, Fengmei; Shifa, Tofik Ahmed; Jiang, Chao; Yang, Hyunsoo

2018-01-01

Optoelectronic devices for information storage and processing are at the heart of optical communication technology due to their significant applications in optical recording and computing. The infrared radiations of 850, 1310, and 1550 nm with low energy dissipation in optical fibers are typical optical communication wavebands. However, optoelectronic devices that could convert and store the infrared data into electrical signals, thereby enabling optical data communications, have not yet been realized. We report an infrared memory device using MoS2/PbS van der Waals heterostructures, in which the infrared pulse intrigues a persistent resistance state that hardly relaxes within our experimental time scales (more than 104 s). The device fully retrieves the memory state even after powering off for 3 hours, indicating its potential for nonvolatile storage devices. Furthermore, the device presents a reconfigurable switch of 2000 stable cycles. Supported by a theoretical model with quantitative analysis, we propose that the optical memory and the electrical erasing phenomenon, respectively, originate from the localization of infrared-induced holes in PbS and gate voltage pulse-enhanced tunneling of electrons from MoS2 to PbS. The demonstrated MoS2 heterostructure–based memory devices open up an exciting field for optoelectronic infrared memory and programmable logic devices. PMID:29770356

Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures.

PubMed

Wang, Qisheng; Wen, Yao; Cai, Kaiming; Cheng, Ruiqing; Yin, Lei; Zhang, Yu; Li, Jie; Wang, Zhenxing; Wang, Feng; Wang, Fengmei; Shifa, Tofik Ahmed; Jiang, Chao; Yang, Hyunsoo; He, Jun

2018-04-01

Optoelectronic devices for information storage and processing are at the heart of optical communication technology due to their significant applications in optical recording and computing. The infrared radiations of 850, 1310, and 1550 nm with low energy dissipation in optical fibers are typical optical communication wavebands. However, optoelectronic devices that could convert and store the infrared data into electrical signals, thereby enabling optical data communications, have not yet been realized. We report an infrared memory device using MoS 2 /PbS van der Waals heterostructures, in which the infrared pulse intrigues a persistent resistance state that hardly relaxes within our experimental time scales (more than 10 4 s). The device fully retrieves the memory state even after powering off for 3 hours, indicating its potential for nonvolatile storage devices. Furthermore, the device presents a reconfigurable switch of 2000 stable cycles. Supported by a theoretical model with quantitative analysis, we propose that the optical memory and the electrical erasing phenomenon, respectively, originate from the localization of infrared-induced holes in PbS and gate voltage pulse-enhanced tunneling of electrons from MoS 2 to PbS. The demonstrated MoS 2 heterostructure-based memory devices open up an exciting field for optoelectronic infrared memory and programmable logic devices.

Light manipulation for organic optoelectronics using bio-inspired moth's eye nanostructures.

PubMed

Zhou, Lei; Ou, Qing-Dong; Chen, Jing-De; Shen, Su; Tang, Jian-Xin; Li, Yan-Qing; Lee, Shuit-Tong

2014-02-10

Organic-based optoelectronic devices, including light-emitting diodes (OLEDs) and solar cells (OSCs) hold great promise as low-cost and large-area electro-optical devices and renewable energy sources. However, further improvement in efficiency remains a daunting challenge due to limited light extraction or absorption in conventional device architectures. Here we report a universal method of optical manipulation of light by integrating a dual-side bio-inspired moth's eye nanostructure with broadband anti-reflective and quasi-omnidirectional properties. Light out-coupling efficiency of OLEDs with stacked triple emission units is over 2 times that of a conventional device, resulting in drastic increase in external quantum efficiency and current efficiency to 119.7% and 366 cd A(-1) without introducing spectral distortion and directionality. Similarly, the light in-coupling efficiency of OSCs is increased 20%, yielding an enhanced power conversion efficiency of 9.33%. We anticipate this method would offer a convenient and scalable way for inexpensive and high-efficiency organic optoelectronic designs.

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

NASA Astrophysics Data System (ADS)

Lee, Juwon; Pak, Sangyeon; Lee, Young-Woo; Cho, Yuljae; Hong, John; Giraud, Paul; Shin, Hyeon Suk; Morris, Stephen M.; Sohn, Jung Inn; Cha, Seungnam; Kim, Jong Min

2017-03-01

Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ~4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 104 s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices.

Spectrally pure RF photonic source based on a resonant optical hyper-parametric oscillator

NASA Astrophysics Data System (ADS)

Liang, W.; Eliyahu, D.; Matsko, A. B.; Ilchenko, V. S.; Seidel, D.; Maleki, L.

2014-03-01

We demonstrate a free running 10 GHz microresonator-based RF photonic hyper-parametric oscillator characterized with phase noise better than -60 dBc/Hz at 10 Hz, -90 dBc/Hz at 100 Hz, and -150 dBc/Hz at 10 MHz. The device consumes less than 25 mW of optical power. A correlation between the frequency of the continuous wave laser pumping the nonlinear resonator and the generated RF frequency is confirmed. The performance of the device is compared with the performance of a standard optical fiber based coupled opto-electronic oscillator of OEwaves.

Exfoliating and Dispersing Few-Layered Graphene in Low-Boiling-Point Organic Solvents towards Solution-Processed Optoelectronic Device Applications.

PubMed

Zhang, Lu; Miao, Zhongshuo; Hao, Zhen; Liu, Jun

2016-05-06

With normal organic surfactants, graphene can only be dispersed in water and cannot be dispersed in low-boiling-point organic solvents, which hampers its application in solution-processed organic optoelectronic devices. Herein, we report the exfoliation of graphite into graphene in low-boiling-point organic solvents, for example, methanol and acetone, by using edge-carboxylated graphene quantum dots (ECGQD) as the surfactant. The great capability of ECGQD for graphene dispersion is due to its ultralarge π-conjugated unit that allows tight adhesion on the graphene surface through strong π-π interactions, its edge-carboxylated structure that diminishes the steric effects of the oxygen-containing functional groups on the basal plane of ECGQD, and its abundance of carboxylic acid groups for solubility. The graphene dispersion in methanol enables the application of graphene:ECGQD as a cathode interlayer in polymer solar cells (PSCs). Moreover, the PSC device performance of graphene:ECGQD is better than that of Ca, the state-of-the-art cathode interlayer material. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Vapor Phase Synthesis of Organometal Halide Perovskite Nanowires for Tunable Room-Temperature Nanolasers.

PubMed

Xing, Jun; Liu, Xin Feng; Zhang, Qing; Ha, Son Tung; Yuan, Yan Wen; Shen, Chao; Sum, Tze Chien; Xiong, Qihua

2015-07-08

Semiconductor nanowires have received considerable attention in the past decade driven by both unprecedented physics derived from the quantum size effect and strong isotropy and advanced applications as potential building blocks for nanoscale electronics and optoelectronic devices. Recently, organic-inorganic hybrid perovskites have been shown to exhibit high optical absorption coefficient, optimal direct band gap, and long electron/hole diffusion lengths, leading to high-performance photovoltaic devices. Herein, we present the vapor phase synthesis free-standing CH3NH3PbI3, CH3NH3PbBr3, and CH3NH3PbIxCl3(-x) perovskite nanowires with high crystallinity. These rectangular cross-sectional perovskite nanowires have good optical properties and long electron hole diffusion length, which ensure adequate gain and efficient optical feedback. Indeed, we have demonstrated optical-pumped room-temperature CH3NH3PbI3 nanowire lasers with near-infrared wavelength of 777 nm, low threshold of 11 μJ/cm(2), and a quality factor as high as 405. Our research advocates the promise of optoelectronic devices based on organic-inorganic perovskite nanowires.

All Inorganic Halide Perovskites Nanosystem: Synthesis, Structural Features, Optical Properties and Optoelectronic Applications.

PubMed

Li, Xiaoming; Cao, Fei; Yu, Dejian; Chen, Jun; Sun, Zhiguo; Shen, Yalong; Zhu, Ying; Wang, Lin; Wei, Yi; Wu, Ye; Zeng, Haibo

2017-03-01

The recent success of organometallic halide perovskites (OHPs) in photovoltaic devices has triggered lots of corresponding research and many perovskite analogues have been developed to look for devices with comparable performance but better stability. Upon the preparation of all inorganic halide perovskite nanocrystals (IHP NCs), research activities have soared due to their better stability, ultrahigh photoluminescence quantum yield (PL QY), and composition dependent luminescence covering the whole visible region with narrow line-width. They are expected to be promising materials for next generation lighting and display, and many other applications. Within two years, a lot of interesting results have been observed. Here, the synthesis of IHPs is reviewed, and their progresses in optoelectronic devices and optical applications, such as light-emitting diodes (LEDs), photodetectors (PDs), solar cells (SCs), and lasing, is presented. Information and recent understanding of their crystal structures and morphology modulations are addressed. Finally, a brief outlook is given, highlighting the presently main problems and their possible solutions and future development directions. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Facet-Specific Ligand Interactions on Ternary AgSbS 2 Colloidal Quantum Dots

DOE PAGES

Choi, Hyekyoung; Kim, Sungwoo; Luther, Joseph M.; ...

2017-11-07

Silver dimetal chalcogenide (Ag-V-VI 2) ternary quantum dots (QDs) are emerging lead-free materials for optoelectronic devices due to their NIR band gaps, large absorption coefficients, and superior electronic properties. However, thin film-based devices of the ternary QDs still lag behind due to the lack of understanding of the surface chemistry, compared to that of lead chalcogenide QDs even with the same crystal structure. Here in this paper, the surface ligand interactions of AgSbS 2 QDs, synthesized with 1-dodecanethiol used as a stabilizer, are studied. For nonpolar (1 0 0) surfaces, it is suggested that the thiolate ligands are associated withmore » the crystal lattices, thus preventing surface oxidation by protecting sulfur after air-exposure, as confirmed through optical and surface chemical analysis. Otherwise, silver rich (1 1 1) surfaces are passivated by thiolate ligands, allowing ligand exchange processes for the conductive films. This in-depth investigation of the surface chemistry of ternary QDs will prompt the performance enhancement of their optoelectronic devices.« less

Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.

PubMed

Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei

2013-10-13

Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

Improving the light-emitting properties of single-layered polyfluorene light-emitting devices by simple ionic liquid blending

NASA Astrophysics Data System (ADS)

Horike, Shohei; Nagaki, Hiroto; Misaki, Masahiro; Koshiba, Yasuko; Morimoto, Masahiro; Fukushima, Tatsuya; Ishida, Kenji

2018-03-01

This paper describes an evaluation of ionic liquids (ILs) as potential electrolytes for single-layered light-emitting devices with good emission performance. As optoelectronic devices continue to grow in abundance, high-performance light-emitting devices with a single emission layer are becoming increasingly important for low-cost production. We show that a simple technique of osmosing IL into the polymer layer can result in high luminous efficiency and good response times of single-layered light-emitting polymers, even without the additional stacking of charge carrier injection and transport layers. The IL contributions to the light-emission of the polymer are discussed from the perspectives of energy diagrams and of the electric double layers on the electrodes. Our findings enable a faster, cheaper, and lower-in-waste production of light-emitting devices.

Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide

DOE PAGES

Bao, Wei; Borys, Nicholas J.; Ko, Changhyun; ...

2015-08-13

The ideal building blocks for atomically thin, flexible optoelectronic and catalytic devices are two-dimensional monolayer transition metal dichalcogenide semiconductors. Although challenging for two-dimensional systems, sub-diffraction optical microscopy provides a nanoscale material understanding that is vital for optimizing their optoelectronic properties. We use the ‘Campanile’ nano-optical probe to spectroscopically image exciton recombination within monolayer MoS2 with sub-wavelength resolution (60 nm), at the length scale relevant to many critical optoelectronic processes. Moreover, synthetic monolayer MoS2 is found to be composed of two distinct optoelectronic regions: an interior, locally ordered but mesoscopically heterogeneous two-dimensional quantum well and an unexpected ~300-nm wide, energetically disorderedmore » edge region. Further, grain boundaries are imaged with sufficient resolution to quantify local exciton-quenching phenomena, and complimentary nano-Auger microscopy reveals that the optically defective grain boundary and edge regions are sulfur deficient. In conclusion, the nanoscale structure–property relationships established here are critical for the interpretation of edge- and boundary-related phenomena and the development of next-generation two-dimensional optoelectronic devices.« less

Light-induced lattice expansion leads to high-efficiency perovskite solar cells

NASA Astrophysics Data System (ADS)

Tsai, Hsinhan; Asadpour, Reza; Blancon, Jean-Christophe; Stoumpos, Constantinos C.; Durand, Olivier; Strzalka, Joseph W.; Chen, Bo; Verduzco, Rafael; Ajayan, Pulickel M.; Tretiak, Sergei; Even, Jacky; Alam, Muhammad Ashraf; Kanatzidis, Mercouri G.; Nie, Wanyi; Mohite, Aditya D.

2018-04-01

Light-induced structural dynamics plays a vital role in the physical properties, device performance, and stability of hybrid perovskite–based optoelectronic devices. We report that continuous light illumination leads to a uniform lattice expansion in hybrid perovskite thin films, which is critical for obtaining high-efficiency photovoltaic devices. Correlated, in situ structural and device characterizations reveal that light-induced lattice expansion benefits the performances of a mixed-cation pure-halide planar device, boosting the power conversion efficiency from 18.5 to 20.5%. The lattice expansion leads to the relaxation of local lattice strain, which lowers the energetic barriers at the perovskite-contact interfaces, thus improving the open circuit voltage and fill factor. The light-induced lattice expansion did not compromise the stability of these high-efficiency photovoltaic devices under continuous operation at full-spectrum 1-sun (100 milliwatts per square centimeter) illumination for more than 1500 hours.

Solar cells

DOEpatents

Peumans, Peter; Uchida, Soichi; Forrest, Stephen R.

2013-06-18

Organic photosensitive optoelectronic devices are disclosed. The devises are thin-film crystalline organic optoelectronic devices capable of generating a voltage when exposed to light, and prepared by a method including the steps of: depositing a first organic layer over a first electrode; depositing a second organic layer over the first organic layer; depositing a confining layer over the second organic layer to form a stack; annealing the stack; and finally depositing a second electrode over the second organic layer.

Negative terahertz photoconductivity in 2D layered materials.

PubMed

Lu, Junpeng; Liu, Hongwei; Sun, Jing

2017-11-17

The remarkable qualities of 2D layered materials such as wide spectral coverage, high strength and great flexibility mean that ultrathin 2D layered materials have the potential to meet the criteria of next-generation optoelectronic devices. Photoconductivity is one of the critical parameters of materials applied to optoelectronics. In contrast to traditional semiconductors, specific ultrathin 2D layers present anomalous negative photoconductivity. This opens a new avenue for designing novel optoelectronic devices. It is important to have a deep understanding of the fundamentals of this anomalous response, in order to design and optimize such devices. In this review, we provide an overview of the observation of negative photoconductivity in 2D layered materials including graphene, topological insulators and transitional metal dichalcogenides. We also summarize recent reports on investigations into the fundamental mechanism using ultrafast terahertz (THz) spectroscopies. Finally, we conclude the review by discussing the existing challenges and proposing the possible prospects of this direction of research.

Growing perovskite into polymers for easy-processable optoelectronic devices

NASA Astrophysics Data System (ADS)

Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

2015-01-01

Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

Growing perovskite into polymers for easy-processable optoelectronic devices

PubMed Central

Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

2015-01-01

Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition. PMID:25579988

Voltage-controlled quantum light from an atomically thin semiconductor

NASA Astrophysics Data System (ADS)

Chakraborty, Chitraleema; Kinnischtzke, Laura; Goodfellow, Kenneth M.; Beams, Ryan; Vamivakas, A. Nick

2015-06-01

Although semiconductor defects can often be detrimental to device performance, they are also responsible for the breadth of functionality exhibited by modern optoelectronic devices. Artificially engineered defects (so-called quantum dots) or naturally occurring defects in solids are currently being investigated for applications ranging from quantum information science and optoelectronics to high-resolution metrology. In parallel, the quantum confinement exhibited by atomically thin materials (semi-metals, semiconductors and insulators) has ushered in an era of flatland optoelectronics whose full potential is still being articulated. In this Letter we demonstrate the possibility of leveraging the atomically thin semiconductor tungsten diselenide (WSe2) as a host for quantum dot-like defects. We report that this previously unexplored solid-state quantum emitter in WSe2 generates single photons with emission properties that can be controlled via the application of external d.c. electric and magnetic fields. These new optically active quantum dots exhibit excited-state lifetimes on the order of 1 ns and remarkably large excitonic g-factors of 10. It is anticipated that WSe2 quantum dots will provide a novel platform for integrated solid-state quantum photonics and quantum information processing, as well as a rich condensed-matter physics playground with which to explore the coupling of quantum dots and atomically thin semiconductors.

Synthesis, properties and applications of 2D layered MIIIXVI (M = Ga, In; X = S, Se, Te) materials.

PubMed

Xu, Kai; Yin, Lei; Huang, Yun; Shifa, Tofik Ahmed; Chu, Junwei; Wang, Feng; Cheng, Ruiqing; Wang, Zhenxing; He, Jun

2016-09-29

Group III-VI compounds M III X VI (M = Ga, In; X = S, Se, Te) are one class of important 2D layered materials and are currently attracting increasing interest due to their unique electronic and optoelectronic properties and their great potential applications in various other fields. Similar to 2D layered transition metal dichalcogenides (TMDs), M III X VI also have the significant merits of ultrathin thickness, ultrahigh surface-to-volume ratio, and high compatibility with flexible devices. More impressively, in contrast with TMDCs, M III X VI demonstrate many superior properties, such as direct band gap electronic structure, high carrier mobility, rare p-type electronic behaviors, high charge density, and so on. These unique characteristics cause high-performance device applications in electronics, optoelectronics, and optics. In this review, we aim to provide a summary of the state-of-the-art of research activities in 2D layered M III X VI materials. The scope of the review covers the synthesis and properties of 2D layered M III X VI materials and their van der Waals heterostructures. We especially focus on the applications in electronics and optoelectronics. Moreover, the review concludes with some perspectives on future developments in this field.

Silicon Schottky Diode Safe Operating Area

NASA Technical Reports Server (NTRS)

Casey, Megan C.; Campola, Michael J.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Phan, Anthony M.; LaBel, Kenneth A.

2016-01-01

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

Soft bioelectronics using nanomaterials

NASA Astrophysics Data System (ADS)

Lee, Hyunjae; Kim, Dae-Hyeong

2016-09-01

Recently, soft bioelectronics has attracted significant attention because of its potential applications in biointegrated healthcare devices and minimally invasive surgical tools. Mechanical mismatch between conventional electronic/optoelectronic devices and soft human tissues/organs, however, causes many challenges in materials and device designs of bio-integrated devices. Intrinsically soft hybrid materials comprising twodimensional nanomaterials are utilized to solve these issues. In this paper, we describe soft bioelectronic devices based on graphene synthesized by a chemical vapor deposition process. These devices have unique advantages over rigid electronics, particularly in biomedical applications. The functionalized graphene is hybridized with other nanomaterials and fabricated into high-performance sensors and actuators toward wearable and minimally invasive healthcare devices. Integrated bioelectronic systems constructed using these devices solve pending issues in clinical medicine while providing new opportunities in personalized healthcare.

Monolithically integrated bacteriorhodopsin/semiconductor opto-electronic integrated circuit for a bio-photoreceiver.

PubMed

Xu, J; Bhattacharya, P; Váró, G

2004-03-15

The light-sensitive protein, bacteriorhodopsin (BR), is monolithically integrated with an InP-based amplifier circuit to realize a novel opto-electronic integrated circuit (OEIC) which performs as a high-speed photoreceiver. The circuit is realized by epitaxial growth of the field-effect transistors, currently used semiconductor device and circuit fabrication techniques, and selective area BR electro-deposition. The integrated photoreceiver has a responsivity of 175 V/W and linear photoresponse, with a dynamic range of 16 dB, with 594 nm photoexcitation. The dynamics of the photochemical cycle of BR has also been modeled and a proposed equivalent circuit simulates the measured BR photoresponse with good agreement.

Prototype Focal-Plane-Array Optoelectronic Image Processor

NASA Technical Reports Server (NTRS)

Fang, Wai-Chi; Shaw, Timothy; Yu, Jeffrey

1995-01-01

Prototype very-large-scale integrated (VLSI) planar array of optoelectronic processing elements combines speed of optical input and output with flexibility of reconfiguration (programmability) of electronic processing medium. Basic concept of processor described in "Optical-Input, Optical-Output Morphological Processor" (NPO-18174). Performs binary operations on binary (black and white) images. Each processing element corresponds to one picture element of image and located at that picture element. Includes input-plane photodetector in form of parasitic phototransistor part of processing circuit. Output of each processing circuit used to modulate one picture element in output-plane liquid-crystal display device. Intended to implement morphological processing algorithms that transform image into set of features suitable for high-level processing; e.g., recognition.

Organic Optoelectronic Devices Employing Small Molecules

NASA Astrophysics Data System (ADS)

Fleetham, Tyler Blain

Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, DeltaE DA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt-16. Furthermore, the development of a series of tetradentate Pt complexes yielded highly efficient and stable single doped white devices due to their halogen free tetradentate design. In addition to these benchmark achievements, the systematic molecular modification of both emissive and absorbing materials provides valuable structure-property relationship information that should help guide further developments in the field.

Optoelectronic Fibers via Selective Amplification of In-Fiber Capillary Instabilities.

PubMed

Wei, Lei; Hou, Chong; Levy, Etgar; Lestoquoy, Guillaume; Gumennik, Alexander; Abouraddy, Ayman F; Joannopoulos, John D; Fink, Yoel

2017-01-01

Thermally drawn metal-insulator-semiconductor fibers provide a scalable path to functional fibers. Here, a ladder-like metal-semiconductor-metal photodetecting device is formed inside a single silica fiber in a controllable and scalable manner, achieving a high density of optoelectronic components over the entire fiber length and operating at a bandwidth of 470 kHz, orders of magnitude larger than any other drawn fiber device. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experiments On Transparent Conductive Films For Spacecraft

NASA Technical Reports Server (NTRS)

Perez-Davis, Marla E.; Rutledge, Sharon K.; De Groh, Kim K.; Hung, Ching-Cheh; Malave-Sanabria, Tania; Hambourger, Paul; Roig, David

1995-01-01

Report describes experiments on thin, transparent, electrically conductive films made, variously, of indium tin oxide covered by magnesium fluoride (ITO/MgF2), aluminum-doped zinc oxide (AZO), or pure zinc oxide (ZnO). Films are candidates for application to such spacecraft components, including various optoelectronic devices and window surfaces that must be protected against buildup of static electric charge. On Earth, such films useful on heat mirrors, optoelectronic devices, gas sensors, and automotive and aircraft windows.

The Validity and Reliability of an iPhone App for Measuring Running Mechanics.

PubMed

Balsalobre-Fernández, Carlos; Agopyan, Hovannes; Morin, Jean-Benoit

2017-07-01

The purpose of this investigation was to analyze the validity of an iPhone application (Runmatic) for measuring running mechanics. To do this, 96 steps from 12 different runs at speeds ranging from 2.77-5.55 m·s -1 were recorded simultaneously with Runmatic, as well as with an opto-electronic device installed on a motorized treadmill to measure the contact and aerial time of each step. Additionally, several running mechanics variables were calculated using the contact and aerial times measured, and previously validated equations. Several statistics were computed to test the validity and reliability of Runmatic in comparison with the opto-electronic device for the measurement of contact time, aerial time, vertical oscillation, leg stiffness, maximum relative force, and step frequency. The running mechanics values obtained with both the app and the opto-electronic device showed a high degree of correlation (r = .94-.99, p < .001). Moreover, there was very close agreement between instruments as revealed by the ICC (2,1) (ICC = 0.965-0.991). Finally, both Runmatic and the opto-electronic device showed almost identical reliability levels when measuring each set of 8 steps for every run recorded. In conclusion, Runmatic has been proven to be a highly reliable tool for measuring the running mechanics studied in this work.

Self-Assembly High-Performance UV-vis-NIR Broadband β-In2Se3/Si Photodetector Array for Weak Signal Detection.

PubMed

Zheng, Zhaoqiang; Yao, Jiandong; Wang, Bing; Yang, Yibin; Yang, Guowei; Li, Jingbo

2017-12-20

The emergence of a rich variety of layered materials has attracted considerable attention in recent years because of their exciting properties. However, the applications of layered materials in optoelectronic devices are hampered by the low light absorption of monolayers/few layers, the lack of p-n junction, and the challenges for large-scale production. Here, we report a scalable production of β-In 2 Se 3 /Si heterojunction arrays using pulsed-laser deposition. Photodetectors based on the as-produced heterojunction array are sensitive to a broadband wavelength from ultraviolet (370 nm) to near-infrared (808 nm), showing a high responsivity (5.9 A/W), a decent current on/off ratio (∼600), and a superior detectivity (4.9 × 10 12 jones), simultaneously. These figures-of-merits are among the best values of the reported heterojunction-based photodetectors. In addition, these devices can further enable the detection of weak signals, as successfully demonstrated with weak light sources including a flashlight, lighter, and fluorescent light. Device physics modeling shows that their high performance is attributed to the strong light absorption of the relatively thick β-In 2 Se 3 film (20.3 nm) and the rational energy band structures of β-In 2 Se 3 and Si, which allows efficient separation of photoexcited electron-hole pairs. These results offer a new insight into the rational design of optoelectronic devices from the synergetic effect of layered materials as well as mature semiconductor technology.

Photonics and optoelectronics of two-dimensional materials beyond graphene.

PubMed

Ponraj, Joice Sophia; Xu, Zai-Quan; Dhanabalan, Sathish Chander; Mu, Haoran; Wang, Yusheng; Yuan, Jian; Li, Pengfei; Thakur, Siddharatha; Ashrafi, Mursal; Mccoubrey, Kenneth; Zhang, Yupeng; Li, Shaojuan; Zhang, Han; Bao, Qiaoliang

2016-11-18

Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.

Photonics and optoelectronics of two-dimensional materials beyond graphene

NASA Astrophysics Data System (ADS)

Ponraj, Joice Sophia; Xu, Zai-Quan; Chander Dhanabalan, Sathish; Mu, Haoran; Wang, Yusheng; Yuan, Jian; Li, Pengfei; Thakur, Siddharatha; Ashrafi, Mursal; Mccoubrey, Kenneth; Zhang, Yupeng; Li, Shaojuan; Zhang, Han; Bao, Qiaoliang

2016-11-01

Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.

Optoelectronic Integrated Circuits For Neural Networks

NASA Technical Reports Server (NTRS)

Psaltis, D.; Katz, J.; Kim, Jae-Hoon; Lin, S. H.; Nouhi, A.

1990-01-01

Many threshold devices placed on single substrate. Integrated circuits containing optoelectronic threshold elements developed for use as planar arrays of artificial neurons in research on neural-network computers. Mounted with volume holograms recorded in photorefractive crystals serving as dense arrays of variable interconnections between neurons.

Electronic and optoelectronic nano-devices based on carbon nanotubes.

PubMed

Scarselli, M; Castrucci, P; De Crescenzi, M

2012-08-08

The discovery and understanding of nanoscale phenomena and the assembly of nanostructures into different devices are among the most promising fields of material science research. In this scenario, carbon nanostructures have a special role since, in having only one chemical element, they allow physical properties to be calculated with high precision for comparison with experiment. Carbon nanostructures, and carbon nanotubes (CNTs) in particular, have such remarkable electronic and structural properties that they are used as active building blocks for a large variety of nanoscale devices. We review here the latest advances in research involving carbon nanotubes as active components in electronic and optoelectronic nano-devices. Opportunities for future research are also identified.

Guided Growth of Horizontal ZnSe Nanowires and their Integration into High-Performance Blue-UV Photodetectors.

PubMed

Oksenberg, Eitan; Popovitz-Biro, Ronit; Rechav, Katya; Joselevich, Ernesto

2015-07-15

Perfectly aligned horizontal ZnSe nano-wires are obtained by guided growth, and easily integrated into high-performance blue-UV photodetectors. Their crystal phase and crystallographic orientation are controlled by the epitaxial relations with six different sapphire planes. Guided growth paves the way for the large-scale integration of nanowires into optoelectronic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Frugal Droplet Microfluidics Using Consumer Opto-Electronics.

PubMed

Frot, Caroline; Taccoen, Nicolas; Baroud, Charles N

2016-01-01

The maker movement has shown how off-the-shelf devices can be combined to perform operations that, until recently, required expensive specialized equipment. Applying this philosophy to microfluidic devices can play a fundamental role in disseminating these technologies outside specialist labs and into industrial use. Here we show how nanoliter droplets can be manipulated using a commercial DVD writer, interfaced with an Arduino electronic controller. We couple the optical setup with a droplet generation and manipulation device based on the "confinement gradients" approach. This device uses regions of different depths to generate and transport the droplets, which further simplifies the operation and reduces the need for precise flow control. The use of robust consumer electronics, combined with open source hardware, leads to a great reduction in the price of the device, as well as its footprint, without reducing its performance compared with the laboratory setup.

Frugal Droplet Microfluidics Using Consumer Opto-Electronics

PubMed Central

Frot, Caroline; Taccoen, Nicolas; Baroud, Charles N.

2016-01-01

The maker movement has shown how off-the-shelf devices can be combined to perform operations that, until recently, required expensive specialized equipment. Applying this philosophy to microfluidic devices can play a fundamental role in disseminating these technologies outside specialist labs and into industrial use. Here we show how nanoliter droplets can be manipulated using a commercial DVD writer, interfaced with an Arduino electronic controller. We couple the optical setup with a droplet generation and manipulation device based on the “confinement gradients” approach. This device uses regions of different depths to generate and transport the droplets, which further simplifies the operation and reduces the need for precise flow control. The use of robust consumer electronics, combined with open source hardware, leads to a great reduction in the price of the device, as well as its footprint, without reducing its performance compared with the laboratory setup. PMID:27560139

High-efficient light absorption of monolayer graphene via cylindrical dielectric arrays and the sensing application

NASA Astrophysics Data System (ADS)

Zhou, Peng; Zheng, Gaige

2018-04-01

The efficiency of graphene-based optoelectronic devices is typically limited by the poor absolute absorption of light. A hybrid structure of monolayer graphene with cylindrical titanium dioxide (TiO2) array and aluminum oxide (Al2O3) spacer layer on aluminum (Al) substrate has been proposed to enhance the absorption for two-dimensional (2D) materials. By combining dielectric array with metal substrate, the structure achieves multiple absorption peaks with near unity absorbance at near-infrared wavelengths due to the resonant effect of dielectric array. Completed monolayer graphene is utilized in the design without any demand of manufacture process to form the periodic patterns. Further analysis indicates that the near-field enhancement induced by surface modes gives rise to the high absorption. This favorable field enhancement and tunability of absorption not only open up new approaches to accelerate the light-graphene interaction, but also show great potential for practical applications in high-performance optoelectronic devices, such as modulators and sensors.

Deciphering Halogen Competition in Organometallic Halide Perovskite Growth

DOE PAGES

Keum, Jong Kahk; Ovchinnikova, Olga S.; Chen, Shiyou; ...

2016-03-01

Organometallic halide perovskites (OHPs) hold great promise for next-generation, low-cost optoelectronic devices. During the chemical synthesis and crystallization of OHP thin films a major unresolved question is the competition between multiple halide species (e.g. I-, Cl-, Br-) in the formation of the mixed halide perovskite crystals. Whether Cl- ions are successfully incorporated into the perovskite crystal structure or alternatively, where they are located, is not yet fully understood. Here, in situ X-ray diffraction measurements of crystallization dynamics are combined with ex situ TOF-SIMS chemical analysis to reveal that Br- or Cl- ions can promote crystal growth, yet reactive I- ionsmore » prevent them from incorporating into the lattice of the final perovskite crystal structure. The Cl- ions are located in the grain boundaries of the perovskite films. These findings significantly advance our understanding of the role of halogens during synthesis of hybrid perovskites, and provide an insightful guidance to the engineering of high-quality perovskite films, essential for exploring superior-performance and cost-effective optoelectronic devices.« less

Deciphering Halogen Competition in Organometallic Halide Perovskite Growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Keum, Jong Kahk; Ovchinnikova, Olga S.; Chen, Shiyou

Organometallic halide perovskites (OHPs) hold great promise for next-generation, low-cost optoelectronic devices. During the chemical synthesis and crystallization of OHP thin films a major unresolved question is the competition between multiple halide species (e.g. I-, Cl-, Br-) in the formation of the mixed halide perovskite crystals. Whether Cl- ions are successfully incorporated into the perovskite crystal structure or alternatively, where they are located, is not yet fully understood. Here, in situ X-ray diffraction measurements of crystallization dynamics are combined with ex situ TOF-SIMS chemical analysis to reveal that Br- or Cl- ions can promote crystal growth, yet reactive I- ionsmore » prevent them from incorporating into the lattice of the final perovskite crystal structure. The Cl- ions are located in the grain boundaries of the perovskite films. These findings significantly advance our understanding of the role of halogens during synthesis of hybrid perovskites, and provide an insightful guidance to the engineering of high-quality perovskite films, essential for exploring superior-performance and cost-effective optoelectronic devices.« less

Chemical and charge transfer studies on interfaces of a conjugated polymer and ITO

NASA Astrophysics Data System (ADS)

David, Tanya M. S.; Arasho, Wondwosson; Smith, O'Neil; Hong, Kunlun; Bonner, Carl; Sun, Sam-Shajing

2017-08-01

Conjugated oligomers and polymers are very attractive for potential future plastic electronic and opto-electronic device applications such as plastic photo detectors and solar cells, thermoelectric devices, field effect transistors, and light emitting diodes. Understanding and optimizing charge transport between an active polymer layer and conductive substrate is critical to the optimization of polymer based electronic and opto-electronic devices. This study focused on the design, synthesis, self-assembly, and electron transfers and transports of a phosphonic acid end-functionalized polyphenylenevinylene (PPV) that was covalently attached and self-assembled onto an Indium Tin Oxide (ITO) substrate. This study demonstrated how atomic force microscopy (AFM) can be an effective characterization technique in conjunction with conventional electron transfer methods, including cyclic voltammetry (CV), towards determining electron transfer rates in polymer and polymer/conductor interface systems. This study found that the electron transfer rates of covalently attached and self-assembled films were much faster than the spin coated films. The knowledge from this study can be very useful for designing potential polymer based electronic and opto-electronic thin film devices.

Achieving high performance polymer optoelectronic devices for high efficiency, long lifetime and low fabrication cost

NASA Astrophysics Data System (ADS)

Huang, Jinsong

This thesis described three types of organic optoelectronic devices: polymer light emitting diodes (PLED), polymer photovoltaic solar cell, and organic photo detector. The research in this work focuses improving their performance including device efficiency, operation lifetime simplifying fabrication process. With further understanding in PLED device physics, we come up new device operation model and improved device architecture design. This new method is closely related to understanding of the science and physics at organic/metal oxide and metal oxide/metal interface. In our new device design, both material and interface are considered in order to confine and balance all injected carriers, which has been demonstrated very be successful in increasing device efficiency. We created two world records in device efficiency: 18 lm/W for white emission fluorescence PLED, 22 lm/W for red emission phosphorescence PLED. Slow solvent drying process has been demonstrated to significantly increase device efficiency in poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C 61-butyric acid methyl ester (PCBM) mixture polymer solar cell. From the mobility study by time of flight, the increase of efficiency can be well correlated to the improved carrier transport property due to P3HT crystallization during slow solvent drying. And it is found that, similar to PLED, balanced carrier mobility is essential in high efficient polymer solar cell. There is also a revolution in our device fabrication method. A unique device fabrication method is presented by an electronic glue based lamination process combined with interface modification as a one-step polymer solar cell fabrication process. It can completely skip the thermal evaporation process, and benefit device lifetime by several merits: no air reactive. The device obtained is metal free, semi-transparent, flexible, self-encapsulated, and comparable efficiency with that by regular method. We found the photomultiplication (PM) phenomenon in C60 based device accidentally. The high PM factor makes it good candidate for photo detector. The high gain was assigned to the trapped-charge induced enhanced-injection at C60/PEDOT:PSS interface.

Advances in graphene-based optoelectronics, plasmonics and photonics

NASA Astrophysics Data System (ADS)

Nguyen, Bich Ha; Hieu Nguyen, Van

2016-03-01

Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented.

Advances in Perovskite Solar Cells

PubMed Central

Zuo, Chuantian; Bolink, Henk J.; Han, Hongwei; Huang, Jinsong

2016-01-01

Organolead halide perovskite materials possess a combination of remarkable optoelectronic properties, such as steep optical absorption edge and high absorption coefficients, long charge carrier diffusion lengths and lifetimes. Taken together with the ability for low temperature preparation, also from solution, perovskite‐based devices, especially photovoltaic (PV) cells have been studied intensively, with remarkable progress in performance, over the past few years. The combination of high efficiency, low cost and additional (non‐PV) applications provides great potential for commercialization. Performance and applications of perovskite solar cells often correlate with their device structures. Many innovative device structures were developed, aiming at large‐scale fabrication, reducing fabrication cost, enhancing the power conversion efficiency and thus broadening potential future applications. This review summarizes typical structures of perovskite solar cells and comments on novel device structures. The applications of perovskite solar cells are discussed. PMID:27812475

SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Optoelectronic processors with scanning CCD photodetectors

NASA Astrophysics Data System (ADS)

Esepkina, N. A.; Lavrov, A. P.; Anan'ev, M. N.; Blagodarnyi, V. S.; Ivanov, S. I.; Mansyrev, M. I.; Molodyakov, S. A.

1995-10-01

Two new types of optoelectronic radio-signal processors were investigated. Charge-coupled device (CCD) photodetectors are used in these processors under continuous scanning conditions, i.e. in a time delay and storage mode. One of these processors is based on a CCD photodetector array with a reference-signal amplitude transparency and the other is an adaptive acousto-optical signal processor with linear frequency modulation. The processor with the transparency performs multichannel discrete—analogue convolution of an input signal with a corresponding kernel of the transformation determined by the transparency. If a light source is an array of light-emitting diodes of special (stripe) geometry, the optical stages of the processor can be made from optical fibre components and the whole processor then becomes a rigid 'sandwich' (a compact hybrid optoelectronic microcircuit). A report is given also of a study of a prototype processor with optical fibre components for the reception of signals from a system with antenna aperture synthesis, which forms a radio image of the Earth.

Meniscus-assisted solution printing of large-grained perovskite films for high-efficiency solar cells

NASA Astrophysics Data System (ADS)

He, Ming; Li, Bo; Cui, Xun; Jiang, Beibei; He, Yanjie; Chen, Yihuang; O'Neil, Daniel; Szymanski, Paul; Ei-Sayed, Mostafa A.; Huang, Jinsong; Lin, Zhiqun

2017-07-01

Control over morphology and crystallinity of metal halide perovskite films is of key importance to enable high-performance optoelectronics. However, this remains particularly challenging for solution-printed devices due to the complex crystallization kinetics of semiconductor materials within dynamic flow of inks. Here we report a simple yet effective meniscus-assisted solution printing (MASP) strategy to yield large-grained dense perovskite film with good crystallization and preferred orientation. Intriguingly, the outward convective flow triggered by fast solvent evaporation at the edge of the meniscus ink imparts the transport of perovskite solutes, thus facilitating the growth of micrometre-scale perovskite grains. The growth kinetics of perovskite crystals is scrutinized by in situ optical microscopy tracking to understand the crystallization mechanism. The perovskite films produced by MASP exhibit excellent optoelectronic properties with efficiencies approaching 20% in planar perovskite solar cells. This robust MASP strategy may in principle be easily extended to craft other solution-printed perovskite-based optoelectronics.

Two-dimensional non-volatile programmable p-n junctions

NASA Astrophysics Data System (ADS)

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

The Power of Materials Science Tools for Gaining Insights into Organic Semiconductors

NASA Astrophysics Data System (ADS)

Treat, Neil D.; Westacott, Paul; Stingelin, Natalie

2015-07-01

The structure of organic semiconductors can be complex because features from the molecular level (such as molecular conformation) to the micrometer scale (such as the volume fraction and composition of phases, phase distribution, and domain size) contribute to the definition of the optoelectronic landscape of the final architectures and, hence, to device performance. As a consequence, a detailed understanding of how to manipulate molecular ordering, e.g., through knowledge of relevant phase transitions, of the solidification process, of relevant solidification mechanisms, and of kinetic factors, is required to induce the desired optoelectronic response. In this review, we discuss relevant structural features of single-component and multicomponent systems; provide a case study of the multifaceted structure that polymer:fullerene systems can adopt; and highlight relevant solidification mechanisms such as nucleation and growth, liquid-liquid phase separation, and spinodal decomposition. In addition, cocrystal formation, solid solutions, and eutectic systems are treated and their relevance within the optoelectronic area emphasized.

Two-dimensional non-volatile programmable p-n junctions.

PubMed

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe 2 /hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 10 4 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

Real-Time Observation of Order-Disorder Transformation of Organic Cations Induced Phase Transition and Anomalous Photoluminescence in Hybrid Perovskites.

PubMed

Yang, Bin; Ming, Wenmei; Du, Mao-Hua; Keum, Jong K; Puretzky, Alexander A; Rouleau, Christopher M; Huang, Jinsong; Geohegan, David B; Wang, Xiaoping; Xiao, Kai

2018-05-01

A fundamental understanding of the interplay between the microscopic structure and macroscopic optoelectronic properties of organic-inorganic hybrid perovskite materials is essential to design new materials and improve device performance. However, how exactly the organic cations affect the structural phase transition and optoelectronic properties of the materials is not well understood. Here, real-time, in situ temperature-dependent neutron/X-ray diffraction and photoluminescence (PL) measurements reveal a transformation of the organic cation CH 3 NH 3 + from order to disorder with increasing temperature in CH 3 NH 3 PbBr 3 perovskites. The molecular-level order-to-disorder transformation of CH 3 NH 3 + not only leads to an anomalous increase in PL intensity, but also results in a multidomain to single-domain structural transition. This discovery establishes the important role that organic cation ordering has in dictating structural order and anomalous optoelectronic phenomenon in hybrid perovskites. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Systematic study of the elastic, optoelectronic, and thermoelectric behavior of MRh2O4 (M = Zn, Cd) based on first principles calculations

NASA Astrophysics Data System (ADS)

Abbas, Syed Adeel; Rashid, Muhammad; Faridi, Muhammad Ayub; Saddique, Muhammad Bilal; Mahmood, Asif; Ramay, Shahid Muhammad

2018-02-01

In the present study, we performed first principles total energy calculations to explore the electronic, elastic, optical, and thermoelectric behavior of MRh2O4(M = Zn, Cd) spinel oxides. We employed Perdew-Burke-Ernzerhof-sol as well as the modified Becke and Johnson potential to compute the elastic, optoelectronic, and thermoelectric behavior of MRh2O4(M = Zn, Cd). The optical behavior was investigated by calculating the complex dielectric constant, refractive index, optical reflectivity, absorption coefficient, and optical conductivity. All of the optical parameters indicated a shift to lower energies as the atomic size increased from Zn to Cd, thereby suggesting potential applications of the spinel oxides in optoelectronic device. Moreover, the thermoelectric properties of MRh2O4(M = Zn, Cd) spinel oxides were computed in terms of the electrical conductivity (σ), Seebeck coefficient (S), thermal conductivity (k), and power factor (σS2) using the BoltzTraP code.

Meniscus-assisted solution printing of large-grained perovskite films for high-efficiency solar cells

PubMed Central

He, Ming; Li, Bo; Cui, Xun; Jiang, Beibei; He, Yanjie; Chen, Yihuang; O’Neil, Daniel; Szymanski, Paul; EI-Sayed, Mostafa A.; Huang, Jinsong; Lin, Zhiqun

2017-01-01

Control over morphology and crystallinity of metal halide perovskite films is of key importance to enable high-performance optoelectronics. However, this remains particularly challenging for solution-printed devices due to the complex crystallization kinetics of semiconductor materials within dynamic flow of inks. Here we report a simple yet effective meniscus-assisted solution printing (MASP) strategy to yield large-grained dense perovskite film with good crystallization and preferred orientation. Intriguingly, the outward convective flow triggered by fast solvent evaporation at the edge of the meniscus ink imparts the transport of perovskite solutes, thus facilitating the growth of micrometre-scale perovskite grains. The growth kinetics of perovskite crystals is scrutinized by in situ optical microscopy tracking to understand the crystallization mechanism. The perovskite films produced by MASP exhibit excellent optoelectronic properties with efficiencies approaching 20% in planar perovskite solar cells. This robust MASP strategy may in principle be easily extended to craft other solution-printed perovskite-based optoelectronics. PMID:28685751

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

PubMed

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-17

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

Finite mode analysis through harmonic waveguides

PubMed

Alieva; Wolf

2000-08-01

The mode analysis of signals in a multimodal shallow harmonic waveguide whose eigenfrequencies are equally spaced and finite can be performed by an optoelectronic device, of which the optical part uses the guide to sample the wave field at a number of sensors along its axis and the electronic part computes their fast Fourier transform. We illustrate this process with the Kravchuk transform.

Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities

DOE PAGES

Xia, Zhenyang; Song, Haomin; Kim, Munho; ...

2017-07-07

Miniaturization of optoelectronic devices offers tremendous performance gain. As the volume of photoactive material decreases, optoelectronic performance improves, including the operation speed, the signal-to-noise ratio, and the internal quantum efficiency. Over the past decades, researchers have managed to reduce the volume of photoactive materials in solar cells and photodetectors by orders of magnitude. However, two issues arise when one continues to thin down the photoactive layers to the nanometer scale (for example, <50 nm). First, light-matter interaction becomes weak, resulting in incomplete photon absorption and low quantum efficiency. Second, it is difficult to obtain ultrathin materials with single-crystalline quality. Wemore » introduce a method to overcome these two challenges simultaneously. It uses conventional bulk semiconductor wafers, such as Si, Ge, and GaAs, to realize single-crystalline films on foreign substrates that are designed for enhanced light-matter interaction. We use a high-yield and high-throughput method to demonstrate nanometer-thin photodetectors with significantly enhanced light absorption based on nanocavity interference mechanism. As a result, these single-crystalline nanomembrane photodetectors also exhibit unique optoelectronic properties, such as the strong field effect and spectral selectivity.« less

Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

NASA Astrophysics Data System (ADS)

Patrick Xiao, T.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

2018-05-01

Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of ηext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0-10 mW/cm2), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

Origin of vertical orientation in two-dimensional metal halide perovskites and its effect on photovoltaic performance.

PubMed

Chen, Alexander Z; Shiu, Michelle; Ma, Jennifer H; Alpert, Matthew R; Zhang, Depei; Foley, Benjamin J; Smilgies, Detlef-M; Lee, Seung-Hun; Choi, Joshua J

2018-04-06

Thin films based on two-dimensional metal halide perovskites have achieved exceptional performance and stability in numerous optoelectronic device applications. Simple solution processing of the 2D perovskite provides opportunities for manufacturing devices at drastically lower cost compared to current commercial technologies. A key to high device performance is to align the 2D perovskite layers, during the solution processing, vertical to the electrodes to achieve efficient charge transport. However, it is yet to be understood how the counter-intuitive vertical orientations of 2D perovskite layers on substrates can be obtained. Here we report a formation mechanism of such vertically orientated 2D perovskite in which the nucleation and growth arise from the liquid-air interface. As a consequence, choice of substrates can be liberal from polymers to metal oxides depending on targeted application. We also demonstrate control over the degree of preferential orientation of the 2D perovskite layers and its drastic impact on device performance.

Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications

DOE PAGES

Mitchell, Brandon; Timmerman, D.; Poplawsky, Jonathan D.; ...

2016-01-04

The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the nature of the incorporation of other co-dopants, such as rare earth ions, has been largely overlooked in GaN. Here, we report the first comprehensive study of the critical role that oxygen has on Eu in GaN, as well as atomic scale observation of diffusion and local concentration of both atoms in the crystal lattice. We find that oxygen plays an integral role in the location, stability, and local defect structure around the Eu ions thatmore » were doped into the GaN host. Although the availability of oxygen is essential for these properties, it renders the material incompatible with GaN-based devices. However, the utilization of the normally occurring oxygen in GaN is promoted through structural manipulation, reducing its concentration by 2 orders of magnitude, while maintaining both the material quality and the favorable optical properties of the Eu ions. Furthermore, these findings open the way for full integration of RE dopants for optoelectronic functionalities in the existing GaN platform.« less

Enhancement of photovoltaic response in multilayer MoS2 induced by plasma doping.

PubMed

Wi, Sungjin; Kim, Hyunsoo; Chen, Mikai; Nam, Hongsuk; Guo, L Jay; Meyhofer, Edgar; Liang, Xiaogan

2014-05-27

Layered transition-metal dichalcogenides hold promise for making ultrathin-film photovoltaic devices with a combination of excellent photovoltaic performance, superior flexibility, long lifetime, and low manufacturing cost. Engineering the proper band structures of such layered materials is essential to realize such potential. Here, we present a plasma-assisted doping approach for significantly improving the photovoltaic response in multilayer MoS2. In this work, we fabricated and characterized photovoltaic devices with a vertically stacked indium tin oxide electrode/multilayer MoS2/metal electrode structure. Utilizing a plasma-induced p-doping approach, we are able to form p-n junctions in MoS2 layers that facilitate the collection of photogenerated carriers, enhance the photovoltages, and decrease reverse dark currents. Using plasma-assisted doping processes, we have demonstrated MoS2-based photovoltaic devices exhibiting very high short-circuit photocurrent density values up to 20.9 mA/cm(2) and reasonably good power-conversion efficiencies up to 2.8% under AM1.5G illumination, as well as high external quantum efficiencies. We believe that this work provides important scientific insights for leveraging the optoelectronic properties of emerging atomically layered two-dimensional materials for photovoltaic and other optoelectronic applications.

Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering

NASA Astrophysics Data System (ADS)

Tsai, Chia-Lung; Lu, Yi-Chen; Hsiung Chang, Sheng

2018-07-01

Photocurrent extraction and electron injection in CH3NH3PbBr3 (MAPbBr3) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr3 interface but also increases the crystallinity of the MAPbBr3 thin films. The optimized dual-functional PCBM-MAPbBr3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m‑2. In addition, the modulation speed of the MAPbBr3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr3 thin film can be effectively reduced by using the ESA process.

Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering.

PubMed

Tsai, Chia-Lung; Lu, Yi-Chen; Chang, Sheng Hsiung

2018-07-06

Photocurrent extraction and electron injection in CH 3 NH 3 PbBr 3 (MAPbBr 3 ) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr 3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr 3 interface but also increases the crystallinity of the MAPbBr 3 thin films. The optimized dual-functional PCBM-MAPbBr 3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m -2 . In addition, the modulation speed of the MAPbBr 3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr 3 thin film can be effectively reduced by using the ESA process.

InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

NASA Technical Reports Server (NTRS)

Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

1995-01-01

A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

An Alternative Anionic Polyelectrolyte for Aqueous PEDOT Dispersions: Toward Printable Transparent Electrodes.

PubMed

Hofmann, Anna I; Smaal, Wiljan T T; Mumtaz, Muhammad; Katsigiannopoulos, Dimitrios; Brochon, Cyril; Schütze, Falk; Hild, Olaf R; Cloutet, Eric; Hadziioannou, Georges

2015-07-13

Organic conducting polymers are promising electrode materials for printable organic electronics. One of the most studied conducting polymers is PSS, which is sufficiently conductive and transparent, but which shows some drawbacks, such as hygroscopicity and acidity. A new approach to stabilize PEDOT in aqueous dispersions involves the replacement of PSS with a basic polyanion based on a polystyrene backbone with (trifluoromethylsulfonyl)imide (TSFI) side groups. The PSTFSIK dispersions were obtained by oxidative polymerization of EDOT in an aqueous PSTFSIK solution and were characterized with regard to their composition, morphology, doping, rheological behavior, and optoelectronic performance. The PSTFSIK dispersions showed excellent printability and good optoelectronic performance (238 Ohm sq(-1) at 91% transmittance, σ>260 S cm(-1)) and were successfully integrated as flexible electrodes in OLED and OPV devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Total Ionizing Dose and Displacement Damage Compendium of Candidate Spacecraft Electronics for NASA

NASA Technical Reports Server (NTRS)

Cochran, Donna J.; Chen, Dakai; Oldham, Timothy R.; Sanders, Anthony B.; Kim, Hak S.; Campola, Michael J.; Buchner, Stephen P.; LaBel, Kenneth A.; Marshall, Cheryl J.; Pellish, Jonathan A.;

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1983-01-01

GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

Ultrathin Polyaniline-based Buffer Layer for Highly Efficient Polymer Solar Cells with Wide Applicability

PubMed Central

Zhao, Wenchao; Ye, Long; Zhang, Shaoqing; Fan, Bin; Sun, Mingliang; Hou, Jianhui

2014-01-01

Interfacial buffer layers often attribute the improved device performance in organic optoelectronic device. Herein, a water-soluble hydrochloric acid doped polyanilines (HAPAN) were utilized as p-type electrode buffer layer in highly efficient polymer solar cells (PSC) based on PBDTTT-EFT and several representative polymers. The PBDTTT-EFT-based conventional PSC featuring ultrathin HAPAN (1.3 nm) delivered high PCE approximately 9%, which is one of the highest values among conventional PSC devices. Moreover, ultrathin HAPAN also exhibited wide applicability in a variety of efficient photovoltaic polymers including PBDTTT-C-T, PTB7, PBDTBDD, PBTTDPP-T, PDPP3T and P3HT. The excellent performances were originated from the high transparency, small film roughness and suitable work function. PMID:25300365

Recent Total Ionizing Dose and Displacement Damage Compendium of Candidate Electronics for NASA Space Systems

NASA Technical Reports Server (NTRS)

Cochran, Donna J.; Boutte, Alvin J.; Campola, Michael J.; Carts, Martin A.; Casey, Megan C.; Chen, Dakai; LaBel, Kenneth A.; Ladbury, Raymond L.; Lauenstein, Jean-Marie; Marshall, Cheryl J.;

Building devices from colloidal quantum dots.

PubMed

Kagan, Cherie R; Lifshitz, Efrat; Sargent, Edward H; Talapin, Dmitri V

2016-08-26

The continued growth of mobile and interactive computing requires devices manufactured with low-cost processes, compatible with large-area and flexible form factors, and with additional functionality. We review recent advances in the design of electronic and optoelectronic devices that use colloidal semiconductor quantum dots (QDs). The properties of materials assembled of QDs may be tailored not only by the atomic composition but also by the size, shape, and surface functionalization of the individual QDs and by the communication among these QDs. The chemical and physical properties of QD surfaces and the interfaces in QD devices are of particular importance, and these enable the solution-based fabrication of low-cost, large-area, flexible, and functional devices. We discuss challenges that must be addressed in the move to solution-processed functional optoelectronic nanomaterials. Copyright © 2016, American Association for the Advancement of Science.

Empirically based device modeling of bulk heterojunction organic photovoltaics

NASA Astrophysics Data System (ADS)

Pierre, Adrien; Lu, Shaofeng; Howard, Ian A.; Facchetti, Antonio; Arias, Ana Claudia

2013-04-01

We develop an empirically based optoelectronic model to accurately simulate the photocurrent in organic photovoltaic (OPV) devices with novel materials including bulk heterojunction OPV devices based on a new low band gap dithienothiophene-DPP donor polymer, P(TBT-DPP), blended with PC70BM at various donor-acceptor weight ratios and solvent compositions. Our devices exhibit power conversion efficiencies ranging from 1.8% to 4.7% at AM 1.5G. Electron and hole mobilities are determined using space-charge limited current measurements. Bimolecular recombination coefficients are both analytically calculated using slowest-carrier limited Langevin recombination and measured using an electro-optical pump-probe technique. Exciton quenching efficiencies in the donor and acceptor domains are determined from photoluminescence spectroscopy. In addition, dielectric and optical constants are experimentally determined. The photocurrent and its bias-dependence that we simulate using the optoelectronic model we develop, which takes into account these physically measured parameters, shows less than 7% error with respect to the experimental photocurrent (when both experimentally and semi-analytically determined recombination coefficient is used). Free carrier generation and recombination rates of the photocurrent are modeled as a function of the position in the active layer at various applied biases. These results show that while free carrier generation is maximized in the center of the device, free carrier recombination is most dominant near the electrodes even in high performance devices. Such knowledge of carrier activity is essential for the optimization of the active layer by enhancing light trapping and minimizing recombination. Our simulation program is intended to be freely distributed for use in laboratories fabricating OPV devices.

Autonomous onboard optical processor for driving aid

NASA Astrophysics Data System (ADS)

Attia, Mondher; Servel, Alain; Guibert, Laurent

1995-01-01

We take advantage of recent technological advances in the field of ferroelectric liquid crystal silicon back plane optoelectronic devices. These are well suited to perform massively parallel processing tasks. That choice enables the design of low cost vision systems and allows the implementation of an on-board system. We focus on transport applications such as road sign recognition. Preliminary in-car experimental results are presented.

Diverse Functionalities of Vertically Stacked Graphene/Single layer n-MoS2/SiO2/p-GaN Heterostructures.

PubMed

Perumal, Packiyaraj; Karuppiah, Chelladurai; Liao, Wei-Cheng; Liou, Yi-Rou; Liao, Yu-Ming; Chen, Yang-Fang

2017-08-30

Integrating different dimentional materials on vertically stacked p-n hetero-junctions have facinated a considerable scrunity and can open up excellent feasibility with various functionalities in opto-electronic devices. Here, we demonstrate that vertically stacked p-GaN/SiO 2 /n-MoS 2 /Graphene heterostructures enable to exhibit prominent dual opto-electronic characteristics, including efficient photo-detection and light emission, which represents the emergence of a new class of devices. The photoresponsivity was found to achieve as high as ~10.4 AW -1 and the detectivity and external quantum efficiency were estimated to be 1.1 × 10 10 Jones and ~30%, respectively. These values are superier than most reported hererojunction devices. In addition, this device exhibits as a self-powered photodetector, showing a high responsivity and fast response speed. Moreover, the device demonstrates the light emission with low turn-on voltage (~1.0 V) which can be realized by electron injection from graphene electrode and holes from GaN film into monolayer MoS 2 layer. These results indicate that with a suitable choice of band alignment, the vertical stacking of materials with different dimentionalities could be significant potential for integration of highly efficient heterostructures and open up feasible pathways towards integrated nanoscale multi-functional optoelectronic devices for a variety of applications.

Charge transport in strongly coupled quantum dot solids

NASA Astrophysics Data System (ADS)

Kagan, Cherie R.; Murray, Christopher B.

2015-12-01

The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design.

Charge transport in strongly coupled quantum dot solids.

PubMed

Kagan, Cherie R; Murray, Christopher B

2015-12-01

The emergence of high-mobility, colloidal semiconductor quantum dot (QD) solids has triggered fundamental studies that map the evolution from carrier hopping through localized quantum-confined states to band-like charge transport in delocalized and hybridized states of strongly coupled QD solids, in analogy with the construction of solids from atoms. Increased coupling in QD solids has led to record-breaking performance in QD devices, such as electronic transistors and circuitry, optoelectronic light-emitting diodes, photovoltaic devices and photodetectors, and thermoelectric devices. Here, we review the advances in synthesis, assembly, ligand treatments and doping that have enabled high-mobility QD solids, as well as the experiments and theory that depict band-like transport in the QD solid state. We also present recent QD devices and discuss future prospects for QD materials and device design.

Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications

DTIC Science & Technology

2007-03-01

with HF in methanol. For example, for 4.5 nm In0.91Ga0.09P nanoparticles in toluene, there is a dramatic increase in PL quantum efficiency from 8...opto-electronic device applications, for which quantum efficiencies above 50% are typically required for commercial cost-effectiveness. For the...InGaP nanocrystals……… 14 Figure 4: 2D double- quantum 31P NMR spectrum, 4.5 nm InGaP nanocrystals………….…… 15 Figure 5: TEM of of 10 nm, 5 nm

Nanophotonic integrated circuits from nanoresonators grown on silicon.

PubMed

Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie

2014-07-07

Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

Compendium of Current Total Ionizing Dose Results and Displacement Damage Results for Candidate Spacecraft Electronics for NASA

NASA Technical Reports Server (NTRS)

Cochran, Donna J.; O'Bryan, Martha V.; Buchner, Stephen P.; Poivey, Christian; Ladbury, Ray L.; LaBel, Kenneth A.

2007-01-01

Sensitivity of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

PubMed

Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras; Coleman, Jonathan N; Strano, Michael S

2012-11-01

The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.

Empirically based device modeling of bulk heterojunction organic photovoltaics

NASA Astrophysics Data System (ADS)

Pierre, Adrien; Lu, Shaofeng; Howard, Ian A.; Facchetti, Antonio; Arias, Ana Claudia

2013-10-01

An empirically based, open source, optoelectronic model is constructed to accurately simulate organic photovoltaic (OPV) devices. Bulk heterojunction OPV devices based on a new low band gap dithienothiophene- diketopyrrolopyrrole donor polymer (P(TBT-DPP)) are blended with PC70BM and processed under various conditions, with efficiencies up to 4.7%. The mobilities of electrons and holes, bimolecular recombination coefficients, exciton quenching efficiencies in donor and acceptor domains and optical constants of these devices are measured and input into the simulator to yield photocurrent with less than 7% error. The results from this model not only show carrier activity in the active layer but also elucidate new routes of device optimization by varying donor-acceptor composition as a function of position. Sets of high and low performance devices are investigated and compared side-by-side.

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.

2016-01-05

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.

2014-07-08

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

DOEpatents

Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

2014-04-01

A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.

2016-03-22

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Optical surface analysis: a new technique for the inspection and metrology of optoelectronic films and wafers

NASA Astrophysics Data System (ADS)

Bechtler, Laurie; Velidandla, Vamsi

2003-04-01

In response to demand for higher volumes and greater product capability, integrated optoelectronic device processing is rapidly increasing in complexity, benefiting from techniques developed for conventional silicon integrated circuit processing. The needs for high product yield and low manufacturing cost are also similar to the silicon wafer processing industry. This paper discusses the design and use of an automated inspection instrument called the Optical Surface Analyzer (OSA) to evaluate two critical production issues in optoelectronic device manufacturing: (1) film thickness uniformity, and (2) defectivity at various process steps. The OSA measurement instrument is better suited to photonics process development than most equipment developed for conventional silicon wafer processing in two important ways: it can handle both transparent and opaque substrates (unlike most inspection and metrology tools), and it is a full-wafer inspection method that captures defects and film variations over the entire substrate surface (unlike most film thickness measurement tools). Measurement examples will be provided in the paper for a variety of films and substrates used for optoelectronics manufacturing.

Novel optoelectronic devices; Proceedings of the Meeting, The Hague, Netherlands, Mar. 31-Apr. 2, 1987

NASA Technical Reports Server (NTRS)

Adams, Michael J. (Editor)

1987-01-01

The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.

Doping dependent crystal structures and optoelectronic properties of n-type CdSe:Ga nanowries.

PubMed

Hu, Zhizhong; Zhang, Xiujuan; Xie, Chao; Wu, Chunyan; Zhang, Xiaozhen; Bian, Liang; Wu, Yiming; Wang, Li; Zhang, Yuping; Jie, Jiansheng

2011-11-01

Although CdSe nanostructures possess excellent electrical and optical properties, efforts to make nano-optoelectronic devices from CdSe nanostructures have been hampered by the lack of efficient methods to rationally control their structural and electrical characteristics. Here, we report CdSe nanowires (NWs) with doping dependent crystal structures and optoelectronic properties by using gallium (Ga) as the efficient n-type dopant via a simple thermal co-evaporation method. The phase change of CdSe NWs from wurtzite to zinc blende with increased doping level is observed. Systematical measurements on the transport properties of the CdSe:Ga NWs reveal that the NW conductivity could be tuned in a wide range of near nine orders of magnitude by adjusting the Ga doping level and a high electron concentration up to 4.5 × 10(19) cm(-3) is obtained. Moreover, high-performance top-gate field-effect transistors are constructed based on the individual CdSe:Ga NWs by using high-κ HfO(2) as the gate dielectric. The great potential of the CdSe:Ga NWs as high-sensitive photodetectors and nanoscale light emitters is also exploited, revealing the promising applications of the CdSe:Ga NWs in new-generation nano-optoelectronics.

Oxide semiconductors for organic opto-electronic devices

NASA Astrophysics Data System (ADS)

Sigdel, Ajaya K.

In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the microstructure during the thin films growth, resulting in GZO electrode with conductivity greater than 4000 S/cm and transparency greater than ˜ 90%. Similarly, various studies on research and development of Indium Zinc Tin Oxide and Indium Zinc Oxide thin films which can be applied to flexible substrates for next generation solar cells application is presented. In these new TCO systems, understanding the role of crystallographic structure ranging from poly-crystalline to amorphous phase and the influence on the charge transport and optical transparency as well as important surface passivation and surface charge transport properties. Implementation of these electrode based on ZnO on opto-electronics devices such as OLED and OPV is complicated due to chemical interaction over time with the organic layer or with ambient. The problem of inefficient charge collection/injection due to poor understanding of interface and/or bulk property of oxide electrode exists at several oxide-organic interfaces. The surface conductivity, the work function, the formation of dipoles and the band-bending at the interfacial sites can positively or negatively impact the device performance. Detailed characterization of the surface composition both before and after various chemicals treatment of various oxide electrode can therefore provide insight into optimization of device performance. Some of the work related to controlling the interfacial chemistry associated with charge transport of transparent electrodes are discussed. Thus, the role of various pre-treatment on poly-crystalline GZO electrode and amorphous indium zinc oxide (IZO) electrode is compared and contrasted. From the study, we have found that removal of defects and self passivating defects caused by accumulation of hydroxides in the surface of both poly-crystalline GZO and amorphous IZO, are critical for improving the surface conductivity and charge transport. Further insight on how these insulating and self-passivating defects cause charge accumulation and recombination in an device is discussed. (Abstract shortened by UMI.)

A Novel Optoelectronic Device Based on Correlated Two-Dimensional Fermions

NASA Astrophysics Data System (ADS)

Dianat, Pouya

Conventional metallic contacts can be replicated by quantum two dimensional charge (of Fermion) systems (2DFS). Unlike metals, the particle concentration of these "unconventional" systems can be accurately controlled in an extensive range and by means of external electronic or optical stimuli. A 2DFS can, hence, transition from a high-density kinetic liquid into a dilute-but highly correlated-gas state, in which inter-particle Coulombic interactions are significant. Such interactions contribute negatively, by so-called exchange-correlation energies, to the overall energetics of the system, and are manifested as a series negative quantum capacitance. This dissertation investigates the capacitive performance of a class of unconventional devices based on a planar metal-semiconductor-metal structure with an embedded 2DFS. They constitute an opto-electronically controlled variable capacitor, with record breaking figures-of-merit in capacitance tuning ranges of up to 7000 and voltage sensitivities as large as 400. Internal eld manipulations by localized depletion of a dense 2DFS account for the enlarged maximum and reduced minimum capacitances. The capacitance-voltage characteristics of these devices incur an anomalous "Batman" shape capacitance enhancement (CE) of up to 200% that may be triggered optically. The CE is attributed to the release and storage of exchange-correlation energies; from the "unconventional" plate and in the dielectric, respectively. This process is enforced by density manipulation of the 2DFS by a hybrid of an external eld and light-generated carriers. Under moderate optical powers, the capacitance becomes 43 times greater than the dark value; thus a new capacitance-based photodetection method is offered. This new capacitance based photodetection method has a range of applications in optoelectronics, particularly in the next generation of photonic integrated systems.

Portable digital lock-in instrument to determine chemical constituents with single-color absorption measurements for Global Health Initiatives

NASA Astrophysics Data System (ADS)

Vacas-Jacques, Paulino; Linnes, Jacqueline; Young, Anna; Gerrard, Victoria; Gomez-Marquez, Jose

2014-03-01

Innovations in international health require the use of state-of-the-art technology to enable clinical chemistry for diagnostics of bodily fluids. We propose the implementation of a portable and affordable lock-in amplifier-based instrument that employs digital technology to perform biochemical diagnostics on blood, urine, and other fluids. The digital instrument is composed of light source and optoelectronic sensor, lock-in detection electronics, microcontroller unit, and user interface components working with either power supply or batteries. The instrument performs lock-in detection provided that three conditions are met. First, the optoelectronic signal of interest needs be encoded in the envelope of an amplitude-modulated waveform. Second, the reference signal required in the demodulation channel has to be frequency and phase locked with respect to the optoelectronic carrier signal. Third, the reference signal should be conditioned appropriately. We present three approaches to condition the signal appropriately: high-pass filtering the reference signal, precise offset tuning the reference level by low-pass filtering, and by using a voltage divider network. We assess the performance of the lock-in instrument by comparing it to a benchmark device and by determining protein concentration with single-color absorption measurements. We validate the concentration values obtained with the proposed instrument using chemical concentration measurements. Finally, we demonstrate that accurate retrieval of phase information can be achieved by using the same instrument.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vacas-Jacques, Paulino; Wellman Center for Photomedicine and Harvard Medical School, Massachusetts General Hospital, Boston, Massachusetts 02114; Linnes, Jacqueline

Innovations in international health require the use of state-of-the-art technology to enable clinical chemistry for diagnostics of bodily fluids. We propose the implementation of a portable and affordable lock-in amplifier-based instrument that employs digital technology to perform biochemical diagnostics on blood, urine, and other fluids. The digital instrument is composed of light source and optoelectronic sensor, lock-in detection electronics, microcontroller unit, and user interface components working with either power supply or batteries. The instrument performs lock-in detection provided that three conditions are met. First, the optoelectronic signal of interest needs be encoded in the envelope of an amplitude-modulated waveform. Second,more » the reference signal required in the demodulation channel has to be frequency and phase locked with respect to the optoelectronic carrier signal. Third, the reference signal should be conditioned appropriately. We present three approaches to condition the signal appropriately: high-pass filtering the reference signal, precise offset tuning the reference level by low-pass filtering, and by using a voltage divider network. We assess the performance of the lock-in instrument by comparing it to a benchmark device and by determining protein concentration with single-color absorption measurements. We validate the concentration values obtained with the proposed instrument using chemical concentration measurements. Finally, we demonstrate that accurate retrieval of phase information can be achieved by using the same instrument.« less

The Integration of Bacteriorhodopsin Proteins with Semiconductor Heterostructure Devices

NASA Astrophysics Data System (ADS)

Xu, Jian

2008-03-01

Bioelectronics has emerged as one of the most rapidly developing fields among the active frontiers of interdisciplinary research. A major thrust in this field is aimed at the coupling of the technologically-unmatched performance of biological systems, such as neural and sensing functions, with the well developed technology of microelectronics and optoelectronics. To this end we have studied the integration of a suitably engineered protein, bacteriorhodopsin (BR), with semiconductor optoelectronic devices and circuits. Successful integration will potentially lead to ultrasensitive sensors with polarization selectivity and built-in preprocessing capabilities that will be useful for high speed tracking, motion and edge detection, biological detection, and artificial vision systems. In this presentation we will summarize our progresses in this area, which include fundamental studies on the transient dynamics of photo-induced charge shift in BR and the coupling mechanism at protein-semiconductor interface for effective immobilizing and selectively integrating light sensitive proteins with microelectronic devices and circuits, and the device engineering of BR-transistor-integrated optical sensors as well as their applications in phototransceiver circuits. Work done in collaboration with Pallab Bhattacharya, Jonghyun Shin, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI; Robert R. Birge, Department of Chemistry, University of Connecticut, Storrs, CT 06269; and György V'ar'o, Institute of Biophysics, Biological Research Center of the Hungarian Academy of Science, H-6701 Szeged, Hungary.

Fiber Bragg grating fabrication for the implementation of sensors in the electronics and optoelectronics laboratory at BUAP

NASA Astrophysics Data System (ADS)

Bracamontes Rodríguez, Y. E.; Beltrán Pérez, G.; Castillo Mixcóatl, J.; Muñoz Aguirre, S.

2011-09-01

Fiber Bragg gratings (FBG) are important optical devices since they have been quite successful not only in the field of communications but also in sensor systems and optical fiber lasers. In the sensors area they are generally used as detection elements for different physical parameters such as temperature, strain, flow, etc. In the electronics and optoelectronics laboratory at Benemérita Universidad Autónoma de Puebla (LEyO-BUAP), there are already experimental setups of sensors as well as laser systems, where FBGs are fundamental elements for their adequate performance. However, these FBGs are commercial devices and they present limited characteristics in their transmission profiles, bandwidth and reflectivity. On the other hand, in some occasions, the delivery time from the fabricant to the customer is quite long. Therefore, it is important for LEyO to implement a system to fabricate this kind of devices, which would mean LEyO independence in the technological development. In this work, results of FBGs fabrication based on the phase mask technique are presented. Such mask is optimized for UV and it has a period of 1060 nm. A Nd:YAG pulsed laser with a 5 ns pulse length and an energy of 40 mJ was used as the UV source employing the 4th harmonic generation to obtain a 266 nm wavelength. Ge-doped fiber was used to fabricate the devices.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr04688a

Self-catalytic VLS growth one dimensional layered GaSe nanobelts for high performance photodetectors

NASA Astrophysics Data System (ADS)

Tang, Luping; Zhao, Zixiang; Yuan, Shuangping; Yang, Tiefeng; Zhou, Bingxin; Zhou, Hong

2018-07-01

Layered GaSe is an important binary semiconductor because of its anisotropic crystallography characteristics, wide band gap and attractive optical and electrical properties. Here, we report the self-catalytic growth of GaSe nanobelts via a simple chemical vapor deposition method. The quality of the as-grown nanobelts have been confirmed by transmission electron microscope and photoluminescence spectra. The field-effect transistors based on these individual GaSe nanobelts have been fabricated and show p-type semiconducting behaviors and on-off ratio of 106. The GaSe nanobelts not only show good responsivity of 164.4 A W-1, but also exhibit excellent stability and reliability, which are superior to their bulk counterparts. These results make GaSe nanobelt a promising optoelectronic material in integrated electronic/optoelectronic devices.

Compliant heterogeneous assemblies of micro-VCSELs as a new materials platform for integrated optoelectronics

NASA Astrophysics Data System (ADS)

Kang, Dongseok; Lee, Sung-Min; Kwong, Anthony; Yoon, Jongseung

2015-03-01

Despite many unique advantages, vertical cavity surface emitting lasers (VCSELs) have been available mostly on rigid, planar wafers over restricted areas, thereby limiting their usage for applications that can benefit from large-scale, programmable assemblies, hybrid integration with dissimilar materials and devices, or mechanically flexible constructions. Here, materials design and fabrication strategies that address these limitations of conventional VCSELs are presented. Specialized design of epitaxial materials and etching processes, together with printing-based deterministic assemblies and substrate thermal engineering, enabled defect-free release of microscale VCSELs and their device- and circuit-level implementation on non-native, flexible substrates with performance comparable to devices on the growth substrate.

Broadband temperature-insensitivity of dispersion-engineered waveguides and resonators

NASA Astrophysics Data System (ADS)

Xu, Lijuan; He, Liuqing; Guo, Yuhao; Li, Guifang; Zhang, Lin

2018-02-01

Photonic circuits suffer from thermal drift of device performance, which is a key obstacle to the development of commercial optoelectronic products. Temperature-insensitive integrated waveguides and resonators have been demonstrated by using materials with a negative TOC at a single wavelength, which are not suitable for WDM devices and wideband nonlinear devices. Here, we propose a waveguide structure with temperature-insensitivity over a bandwidth of 780 nm (1280 to 2060 nm) with an ultra-small effective TOC within +/-1×10-6/K. Uniquely, the waveguide has small anomalous dispersion (from 66 to 329 ps/nm/km) over the same band and is suitable for frequency comb generation without being affected by intra-cavity thermal dynamics.

Metal Complexes for Organic Optoelectronic Applications

NASA Astrophysics Data System (ADS)

Huang, Liang

Organic optoelectronic devices have drawn extensive attention by over the past two decades. Two major applications for Organic optoelectronic devices are efficient organic photovoltaic devices(OPV) and organic light emitting diodes (OLED). Organic Solar cell has been proven to be compatible with the low cost, large area bulk processing technology and processed high absorption efficiencies compared to inorganic solar cells. Organic light emitting diodes are a promising approach for display and solid state lighting applications. To improve the efficiency, stability, and materials variety for organic optoelectronic devices, several emissive materials, absorber-type materials, and charge transporting materials were developed and employed in various device settings. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. In this thesis, Chapter 1 provides an introduction to the background knowledge of OPV and OLED research fields presented. Chapter 2 discusses new porphyrin derivatives- azatetrabenzylporphyrins for OPV and near infrared OLED applications. A modified synthetic method is utilized to increase the reaction yield of the azatetrabenzylporphyrin materials and their photophysical properties, electrochemical properties are studied. OPV devices are also fabricated using Zinc azatetrabenzylporphyrin as donor materials. Pt(II) azatetrabenzylporphyrin were also synthesized and used in near infra-red OLED to achieve an emission over 800 nm with reasonable external quantum efficiencies. Chapter 3, discusses the synthesis, characterization, and device evaluation of a series of tetradentate platinum and palladium complexesfor single doped white OLED applications and RGB white OLED applications. Devices employing some of the developed emitters demonstrated impressively high external quantum efficiencies within the range of 22%-27% for various emitter concentrations. And the palladium complex, i.e. Pd3O3, enables the fabrication of stable devices achieving nearly 1000h. at 1000cd/m2 without any outcoupling enhancement while simultaneously achieving peak external quantum efficiencies of 19.9%. Chapter 4 discusses tetradentate platinum and palladium complexes as deep blue emissive materials for display and lighting applications. The platinum complex PtNON, achieved a peak external quantum efficiency of 24.4 % and CIE coordinates of (0.18, 0.31) in a device structure designed for charge confinement and the palladium complexes Pd2O2 exhibited peak external quantum efficiency of up to 19.2%.

Flexible manufacturing for photonics device assembly

NASA Technical Reports Server (NTRS)

Lu, Shin-Yee; Pocha, Michael D.; Strand, Oliver T.; Young, K. David

1994-01-01

The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

DOEpatents

Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

2014-05-20

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

DOEpatents

Rogers, John A [Champaign, IL; Meitl, Matthew [Raleigh, NC; Sun, Yugang [Naperville, IL; Ko, Heung Cho [Urbana, IL; Carlson, Andrew [Urbana, IL; Choi, Won Mook [Champaign, IL; Stoykovich, Mark [Dover, NH; Jiang, Hanqing [Urbana, IL; Huang, Yonggang [Glencoe, IL; Nuzzo, Ralph G [Champaign, IL; Lee, Keon Jae [Tokyo, JP; Zhu, Zhengtao [Rapid City, SD; Menard, Etienne [Durham, NC; Khang, Dahl-Young [Seoul, KR; Kan, Seong Jun [Daejeon, KR; Ahn, Jong Hyun [Suwon, KR; Kim, Hoon-sik [Champaign, IL

2012-07-10

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Photoresponse in graphene induced by defect engineering

NASA Astrophysics Data System (ADS)

Du, Ruxia; Wang, Wenhui; Du, Jianxin; Guo, Xitao; Liu, Er; Bing, Dan; Bai, Jing

2016-11-01

We present a photoresponse study on a lateral defect/pristine graphene junction device fabricated by a simple plasma irradiation method. The junction between pristine graphene and plasma-modified graphene was created by controlling the location of Ar+ plasma treatment. We found that a distinct photocurrent was generated at the junction by photocurrent line scanning measurements, and further analysis reveals that the photo-thermoelectric (PTE) effect, instead of the photovoltaic (PV) effect, dominates the photocurrent generation at the interface. Additionally, the obtained results suggest that tuning the defect density could be effective in modulating the optoelectronic performance of junctions in our device.

Temperature Dependence of Photoluminescence in InGaAs/InP Strained MQW Heterostructures

NASA Technical Reports Server (NTRS)

Raisky, O. Y.; Wang, W. B.; Alfano, R. R.; Reynolds, C. L., Jr.; Swaminathan, V.

1996-01-01

Multiple quantum well (MQW) InGaAsP/InP heterostructure systems have been drawn considerable research interest in recent years due to its suitability for long wavelength optoelectronic devices. The performance of such devices is strongly affected by peculiarities of recombination processes in the quantum wells (QW). The goal of this study was to investigate the effect of barrier width on the radiative recombination of carriers. In our study, the photoluminescence spectra from InGaAsP/lnP MQW double heterostructures have been measured in the 77-290 K temperature range with different excitation intensities.

Monolayer borophene electrode for effective elimination of both the Schottky barrier and strong electric field effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, L. Z., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn; Xiong, S. J.; Wu, X. L., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn

2016-08-08

The formation of Schottky barriers between 2D semiconductors and traditional metallic electrodes has greatly limited the application of 2D semiconductors in nanoelectronic and optoelectronic devices. In this study, metallic borophene was used as a substitute for the traditional noble metal electrode to contact with the 2D semiconductor. Theoretical calculations demonstrated that no Schottky barrier exists in the borophene/2D semiconductor heterostructure. The contact remains ohmic even with a strong electric field applied. This finding provides a way to construct 2D electronic devices and sensors with greatly enhanced performance.

Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

NASA Astrophysics Data System (ADS)

Liang, Yu Teng

Over the past couple decades, fundamental research into carbon nanomaterials has produced a steady stream of groundbreaking physical science. Their record setting mechanical strength, chemical stability, and optoelectronic performance have fueled many optimistic claims regarding the breadth and pace of carbon nanotube and graphene integration. However, present synthetic, processing, and economic constraints have precluded these materials from many practical device applications. To overcome these limitations, novel synthetic techniques, processing methodologies, device geometries, and mechanistic insight were developed in this dissertation. The resulting advancements in material production and composite device performance have brought carbon nanomaterials ever closer to commercial implementation. For improved materials processing, vacuum co-deposition was first demonstrated as viable technique for forming carbon nanocomposite films without property distorting covalent modifications. Co-deposited nanoparticle, carbon nanotube, and graphene composite films enabled rapid device prototyping and compositional optimization. Cellulosic polymer stabilizers were then shown to be highly effective carbon nanomaterial dispersants, improving graphene production yields by two orders of magnitude in common organic solvents. By exploiting polarity interactions, iterative solvent exchange was used to further increase carbon nanomaterial dispersion concentrations by an additional order of magnitude, yielding concentrated inks. On top of their low causticity, these cellulosic nanomaterial inks have highly tunable viscosities, excellent film forming capacity, and outstanding thermal stability. These processing characteristics enable the efficient scaling of carbon nanomaterial coatings and device production using existing roll-to-roll fabrication techniques. Utilizing these process improvements, high-performance gas sensing, energy storage, transparent conductor, and photocatalytic coatings have been demonstrated. In particular, co-deposited platinum, silicon, and carbon nanomaterial films were fashioned into electronic hydrogen gas sensors, cost efficient dye sensitized solar cell electrodes, and high capacity lithium ion battery anodes. Furthermore, concentrated graphene inks were coated to form aligned graphene-polymer nanocomposites and outstanding carbon nanotube-graphene hybrid semitransparent electrical conductors. Nanocomposite graphene-titanium dioxide catalysts produced from these cellulosic inks have low covalent defect densities and were shown to be approximately two and seven times more active than those based on reduced graphene oxide in photo-oxidation and photo-reduction reactions, respectively. Using a broad range of material characterization techniques, mechanistic insight was obtained using composite photocatalysts fabricated from well defined nanomaterials. For instance, optical spectroscopy and electronic measurements revealed a direct correlation between graphene charge transport performance and composite photochemical activity. Moreover, investigations into multidimensional composites based on 1D carbon nanotubes, 2D graphene, and 2D titanium dioxide nanosheets generated additional mechanistic insight for extending photocatalytic spectral response and increasing reaction specificity. Together, these results demonstrate the versatility of vacuum co-deposition and cellulosic nanomaterial inks for fabricating carbon nanocomposite optoelectronic and energy conversion coatings.

Diketopyrrolopyrrole-based Conjugated Polymers Bearing Branched Oligo(Ethylene Glycol) Side Chains for Photovoltaic Devices.

PubMed

Chen, Xingxing; Zhang, Zijian; Ding, Zicheng; Liu, Jun; Wang, Lixiang

2016-08-22

Conjugated polymers are essential for solution-processable organic opto-electronic devices. In contrast to the great efforts on developing new conjugated polymer backbones, research on developing side chains is rare. Herein, we report branched oligo(ethylene glycol) (OEG) as side chains of conjugated polymers. Compared with typical alkyl side chains, branched OEG side chains endowed the resulting conjugated polymers with a smaller π-π stacking distance, higher hole mobility, smaller optical band gap, higher dielectric constant, and larger surface energy. Moreover, the conjugated polymers with branched OEG side chains exhibited outstanding photovoltaic performance in polymer solar cells. A power conversion efficiency of 5.37 % with near-infrared photoresponse was demonstrated and the device performance could be insensitive to the active layer thickness. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A multiplexed electronic architecture for opto-electronic patch sensor to effectively monitor heart rate and oxygen saturation

NASA Astrophysics Data System (ADS)

Yan, Liangwen; Hu, Sijung; Alharbi, Samah; Blanos, Panagiotis

2018-02-01

To effectively capture human vital signs, a multi-wavelength optoelectronic patch sensor (MOEPS), together with a schematic architecture of electronics, was developed to overcome the drawbacks of present photoplethysmographic (PPG) sensors. To obtain a better performance of in vivo physiological measurement, the optimal illuminations, i.e., light emitting diodes (LEDs) in the MOEPS, whose wavelength is automatically adjusted to each specific subject, were selected to capture better PPG signals. A multiplexed electronic architecture has been well established to properly drive the MOEPS and effectively capture pulsatile waveforms at rest. The protocol was designed to investigate its performance with the participation of 11 healthy subjects aged between 18 and 30. The signals obtained from green (525nm) and orange (595nm) illuminations were used to extract heart rate (HR) and oxygen saturation (SpO2%). These results were compared with data, simultaneously acquired, from a commercial ECG and a pulse oximeter. Considering the difficulty for current devices to attain the SpO2%, a new computing method, to obtain the value of SpO2%, is proposed depended on the green and orange wavelength illuminations. The values of SpO2% between the MOEPS and the commercial Pulse Oximeter devics showed that the results were in good agreement. The values of HR showed close correlation between commercial devices and the MOEPS (HR: r1=0.994(Green); r2=0.992(Orange); r3=0.975(Red); r4=0.990(IR)).

Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jie; Morrow, Darien J.; Fu, Yongping

High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr 3) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO 3(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcomingmore » the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr 3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (10 4 cm s –1), and low defect density of 10 12 cm –3, which are comparable to those of CsPbBr 3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.« less

Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3)

DOE PAGES

Chen, Jie; Morrow, Darien J.; Fu, Yongping; ...

2017-09-05

High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr 3) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO 3(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcomingmore » the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr 3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (10 4 cm s –1), and low defect density of 10 12 cm –3, which are comparable to those of CsPbBr 3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.« less

Detection of wavelengths in the visible range using fiber optic sensors

NASA Astrophysics Data System (ADS)

Díaz, Leonardo; Morales, Yailteh; Mattos, Lorenzo; Torres, Cesar O.

2013-11-01

This paper shows the design and implementation of a fiber optic sensor for detecting and identifying wavelengths in the visible range. The system consists of a diffuse optical fiber, a conventional laser diode 650nm, 2.5mW of power, an ambient light sensor LX1972, a PIC 18F2550 and LCD screen for viewing. The principle used in the detection of the lambda is based on specular reflection and absorption. The optoelectronic device designed and built used the absorption and reflection properties of the material under study, having as active optical medium a bifurcated optical fiber, which is optically coupled to an ambient light sensor, which makes the conversion of light signals to electricas, procedure performed by a microcontroller, which acquires and processes the signal. To verify correct operation of the assembly were utilized the color cards of sewing thread and nail polish as samples for analysis. This optoelectronic device can be used in many applications such as quality control of industrial processes, classification of corks or bottle caps, color quality of textiles, sugar solutions, polymers and food among others.

Excitations Partition into Two Distinct Populations in Bulk Perovskites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lili; Brawand, Nicholas P.; Vörös, Márton

2018-01-09

Organolead halide perovskites convert optical excitations to charge carriers with remarkable efficiency in optoelectronic devices. Previous research predominantly documents dynamics in perovskite thin films; however, extensive disorder in this platform may obscure the observed carrier dynamics. Here, carrier dynamics in perovskite single-domain single crystals is examined by performing transient absorption spectroscopy in a transmissive geometry. Two distinct sets of carrier populations that coexist at the same radiation fluence, but display different decay dynamics, are observed: one dominated by second-order recombination and the other by third-order recombination. Based on ab initio simulations, this observation is found to be most consistent withmore » the hypothesis that free carriers and localized carriers coexist due to polaron formation. The calculations suggest that polarons will form in both CH3NH3PbBr3 and CH3NH3PbI3 crystals, but that they are more pronounced in CH3NH3PbBr3. Single-crystal CH3NH3PbBr3 could represent the key to understanding the impact of polarons on the transport properties of perovskite optoelectronic devices.« less

Theoretical investigation of carrier transfer by an optical contacting scheme for optoelectronic application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jianfeng, E-mail: jianfeng.yang@student.unsw.edu.au; Zhang, Zhilong; Chen, Weijian

2016-04-21

As a promising charge carrier transfer scheme, optical coupling could potentially improve the performance of an optoelectronic device for energy harvesting based on well developed nanotechnology. By extracting carriers optically, the functional features of the nano-structured material could be better used by minimizing the concerns about its electrical properties. In this paper, we present a rigorous electromagnetic model to analyze the optical carrier transfer problem. The flow of the energy is analyzed carefully by the photon transfer spectrum, and the photon emitters (electron-hole pairs) are assumed in a thermal equilibrium described by Bose-Einstein distribution. The result shows that an energymore » selective carrier transfer can be optically achieved at the device level by integrating the emitter and receiver into a nano-optical resonator, where both the photon emission and absorption are significantly amplified by a near-field coupling around the resonant frequency. General design and optimization schemes in practice are addressed by examining the influence of the photonic design and an energy dependent emissivity of the emitter, which can be used to develop the optical contacting concept further.« less

Synthesis, properties and applications of 2D non-graphene materials.

PubMed

Wang, Feng; Wang, Zhenxing; Wang, Qisheng; Wang, Fengmei; Yin, Lei; Xu, Kai; Huang, Yun; He, Jun

2015-07-24

As an emerging class of new materials, two-dimensional (2D) non-graphene materials, including layered and non-layered, and their heterostructures are currently attracting increasing interest due to their promising applications in electronics, optoelectronics and clean energy. In contrast to traditional semiconductors, such as Si, Ge and III-V group materials, 2D materials show significant merits of ultrathin thickness, very high surface-to-volume ratio, and high compatibility with flexible devices. Owing to these unique properties, while scaling down to ultrathin thickness, devices based on these materials as well as artificially synthetic heterostructures exhibit novel and surprising functions and performances. In this review, we aim to provide a summary on the state-of-the-art research activities on 2D non-graphene materials. The scope of the review will cover the preparation of layered and non-layered 2D materials, construction of 2D vertical van der Waals and lateral ultrathin heterostructures, and especially focus on the applications in electronics, optoelectronics and clean energy. Moreover, the review is concluded with some perspectives on the future developments in this field.

Roll-To-Roll Printing of Meter-Scale Composite Transparent Electrodes with Optimized Mechanical and Optical Properties for Photoelectronics.

PubMed

Meng, Xiangchuan; Hu, Xiaotian; Yang, Xia; Yin, Jingping; Wang, Qingxia; Huang, Liqiang; Yu, Zoukangning; Hu, Ting; Tan, Licheng; Zhou, Weihua; Chen, Yiwang

2018-03-14

Flexible transparent electrodes are an indispensable component for flexible optoelectronic devices. In this work, the meter-scale composite transparent electrodes (CTEs) composed of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) and Ag grid/polyethylene terephthalate (PET) with optimized mechanical and optical properties are demonstrated by slot-die roll-to-roll technique with solution printing method under a low cost ($15-20 per square meter), via control of the viscosity and surface energy of PEDOT:PSS ink as well as the printing parameters. The CTEs show excellent flexibility remaining 98% of the pristine value after bending 2000 times under various bending situations, and the square resistance ( R s ) of CTEs can be reduced to 4.5-5.0 Ω/sq with an appropriate transmittance. Moreover, the optical performances, such as haze, extinction coefficient, and refractive index, are investigated, as compared with indium tin oxide/PET, which are potential for the inexpensive optoelectronic flexible devices. The CTEs could be successfully employed in polymer solar cells with different areas, showing a maximal power conversion efficiency of 8.08%.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lili; Brawand, Nicholas P.; Vörös, Márton

Organolead halide perovskites convert optical excitations to charge carriers with remarkable efficiency in optoelectronic devices. Previous research predominantly documents dynamics in perovskite thin films; however, extensive disorder in this platform may obscure the observed carrier dynamics. Here, carrier dynamics in perovskite single-domain single crystals is examined by performing transient absorption spectroscopy in a transmissive geometry. Two distinct sets of carrier populations that coexist at the same radiation fluence, but display different decay dynamics, are observed: one dominated by second-order recombination and the other by third-order recombination. Based on ab initio simulations, this observation is found to be most consistent withmore » the hypothesis that free carriers and localized carriers coexist due to polaron formation. The calculations suggest that polarons will form in both CH3NH3PbBr3 and CH3NH3PbI3 crystals, but that they are more pronounced in CH3NH3PbBr3. Single-crystal CH3NH3PbBr3 could represent the key to understanding the impact of polarons on the transport properties of perovskite optoelectronic devices.« less

High bandgap III-V alloys for high efficiency optoelectronics

DOEpatents

Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

2017-01-10

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

Structure and Growth Control of Organic-Inorganic Halide Perovskites for Optoelectronics: From Polycrystalline Films to Single Crystals.

PubMed

Chen, Yani; He, Minhong; Peng, Jiajun; Sun, Yong; Liang, Ziqi

2016-04-01

Recently, organic-inorganic halide perovskites have sparked tremendous research interest because of their ground-breaking photovoltaic performance. The crystallization process and crystal shape of perovskites have striking impacts on their optoelectronic properties. Polycrystalline films and single crystals are two main forms of perovskites. Currently, perovskite thin films have been under intensive investigation while studies of perovskite single crystals are just in their infancy. This review article is concentrated upon the control of perovskite structures and growth, which are intimately correlated for improvements of not only solar cells but also light-emitting diodes, lasers, and photodetectors. We begin with the survey of the film formation process of perovskites including deposition methods and morphological optimization avenues. Strategies such as the use of additives, thermal annealing, solvent annealing, atmospheric control, and solvent engineering have been successfully employed to yield high-quality perovskite films. Next, we turn to summarize the shape evolution of perovskites single crystals from three-dimensional large sized single crystals, two-dimensional nanoplates, one-dimensional nanowires, to zero-dimensional quantum dots. Siginificant functions of perovskites single crystals are highlighted, which benefit fundamental studies of intrinsic photophysics. Then, the growth mechanisms of the previously mentioned perovskite crystals are unveiled. Lastly, perspectives for structure and growth control of perovskites are outlined towards high-performance (opto)electronic devices.

Method of fabricating an optoelectronic device having a bulk heterojunction

DOEpatents

Shtein, Max [Princeton, NJ; Yang, Fan [Princeton, NJ; Forrest, Stephen R [Princeton, NJ

2008-09-02

A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.

Metal oxide charge transport material doped with organic molecules

DOEpatents

Forrest, Stephen R.; Lassiter, Brian E.

2016-08-30

Doping metal oxide charge transport material with an organic molecule lowers electrical resistance while maintaining transparency and thus is optimal for use as charge transport materials in various organic optoelectronic devices such as organic photovoltaic devices and organic light emitting devices.

A Long-Term View on Perovskite Optoelectronics.

PubMed

Docampo, Pablo; Bein, Thomas

2016-02-16

Recently, metal halide perovskite materials have become an exciting topic of research for scientists of a wide variety of backgrounds. Perovskites have found application in many fields, starting from photovoltaics and now also making an impact in light-emitting applications. This new class of materials has proven so interesting since it can be easily solution processed while exhibiting materials properties approaching the best inorganic optoelectronic materials such as GaAs and Si. In photovoltaics, in only 3 years, efficiencies have rapidly increased from an initial value of 3.8% to over 20% in recent reports for the commonly employed methylammonium lead iodide (MAPI) perovskite. The first light emitting diodes and light-emitting electrochemical cells have been developed already exhibiting internal quantum efficiencies exceeding 15% for the former and tunable light emission spectra. Despite their processing advantages, perovskite optoelectronic materials suffer from several drawbacks that need to be overcome before the technology becomes industrially relevant and hence achieve long-term application. Chief among these are the sensitivity of the structure toward moisture and crystal phase transitions in the device operation regime, unreliable device performance dictated by the operation history of the device, that is, hysteresis, the inherent toxicity of the structure, and the high cost of the employed charge selective contacts. In this Account, we highlight recent advances toward the long-term viability of perovskite photovoltaics. We identify material decomposition routes and suggest strategies to prevent damage to the structure. In particular, we focus on the effect of moisture upon the structure and stabilization of the material to avoid phase transitions in the solar cell operating range. Furthermore, we show strategies to achieve low-cost chemistries for the development of hole transporters for perovskite solar cells, necessary to be able to compete with other established technologies. Additionally, we explore the application of perovskite materials in optoelectronic applications. We show that perovskite materials can function efficiently both as a film in light-emitting diodes and also in the form of nanoparticles in light-emitting electrochemical cells. Perovskite materials have indeed a very bright future.

Terahertz optoelectronics with surface plasmon polariton diode.

PubMed

Vinnakota, Raj K; Genov, Dentcho A

2014-05-09

The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

PubMed Central

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-01-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics. PMID:27507171

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

NASA Astrophysics Data System (ADS)

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-08-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics.

A review of the synthesis of reduced defect density InxGa1-xN for all indium compositions

NASA Astrophysics Data System (ADS)

Clinton, Evan A.; Vadiee, Ehsan; Fabien, Chloe A. M.; Moseley, Michael W.; Gunning, Brendan P.; Doolittle, W. Alan; Fischer, Alec M.; Wei, Yong O.; Xie, Hongen; Ponce, Fernando A.

2017-10-01

A review of metal rich and nitrogen rich (N-rich), low-temperature grown InxGa1-xN is provided, focusing on two low-temperature approaches that have resulted in non-phase separated InxGa1-xN. The metal modulated epitaxy (MME) and N-rich, low temperature approaches to the reduction of defects in InxGa1-xN are described and are capable of growing InxGa1-xN throughout the miscibility gap. MME films remain smooth at all thicknesses but show device quality material primarily for x < 0.2 and x > 0.6. Low temperature, N-rich grown films show a critical thickness extend well beyond the theoretical values and results in slower relaxation through the 0.2 < x < 0.6 range most interesting for light emitters and solar cells. This reduced defect density results in improved optical emission, but due to increased roughening with increased thickness, low temperature, N-rich films are limited to thin layers. Future thick InxGa1-xN substrates are necessary to increase design freedom, as well as improve optoelectronic device performance. Initial results with films up to 800 nm are shown to display evidence of defect annihilation which could be promising for future thick optoelectronic templates and thick devices.

Ligand removal and photo-activation of CsPbBr3 quantum dots for enhanced optoelectronic devices.

PubMed

Moyen, Eric; Kanwat, Anil; Cho, Sinyoung; Jun, Haeyeon; Aad, Roy; Jang, Jin

2018-05-10

Perovskite quantum dots have recently emerged as a promising light source for optoelectronic applications. However, integrating them into devices while preserving their outstanding optical properties remains challenging. Due to their ionic nature, perovskite quantum dots are extremely sensitive and degrade on applying the simplest processes. To maintain their colloidal stability, they are surrounded by organic ligands; these prevent efficient charge carrier injection in devices and have to be removed. Here we report on a simple method, where a moderate thermal process followed by exposure to UV in air can efficiently remove ligands and increase the photo-luminescence of the room temperature synthesized perovskite quantum dot thin films. Annealing is accompanied by a red shift of the emission wavelength, usually attributed to the coalescence and irreversible degradation of the quantum dots. We show that it is actually related to the relaxation of the quantum dots upon the ligand removal, without the creation of non-radiative recombining defects. The quantum dot surface, as devoid of ligands, is subsequently photo-oxidized and smoothened upon exposure to UV in air, which drastically enhances their photo-luminescence. This adequate combination of treatments improves by more than an order of magnitude the performances of perovskite quantum dot light emitting diodes.

Polymer-silicon nanosheet composites: bridging the way to optoelectronic applications

NASA Astrophysics Data System (ADS)

Lyuleeva, Alina; Helbich, Tobias; Rieger, Bernhard; Lugli, Paolo

2017-04-01

The fabrication of electronic devices from sensitive, functional, two-dimensional (2D) nanomaterials with anisotropic structural properties has attracted much attention. Many theoretical and experimental studies have been performed; however, such materials have not been used in applications. In this context, the focus has shifted toward the study and synthesis of new materials. Freestanding hydrogen-terminated silicon nanosheets (SiNSs) are a new class of material with outstanding (opto)electronic properties (e.g. photoluminescence at approximately 510 nm) (Nakano 2014 J. Ceram. Soc. Japan 122 748). SiNSs are promising candidates for use in nanoelectronic devices and flexible electronics. Additional reasons for interest in such nanomaterials are their structural anisotropy and the fact that they are made from silicon. Here, we present examples for the application of functionalized SiNS-based composites as active materials for photonic sensors. The implementation of SiNSs in a covalent nanocomposite not only improves their stability but also facilitates subsequent device fabrication. Thus, SiNSs can be used in a straightforward setup preparation procedure. We show that the modification of novel Si-based 2D nanosheets with selected organic components not only opens a new field of photosensitive applications but also improves the processability of these nanosheets (Niu et al 2014 Sci. Rep. 4 4810, Chimene et al 2015 Adv. Mater. 27 7261).

Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

PubMed

Zhang, Panlong; Wang, Haibo; Yan, Donghang

2017-09-01

A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Ahmari, David Abbas

Heterojunction bipolar transistors (HBTs) have demonstrated the high-frequency characteristics as well as the high linearity, gain, and power efficiency necessary to make them attractive for a variety of applications. Specific applications for which HBTs are well suited include amplifiers, analog-to-digital converters, current sources, and optoelectronic integrated circuits. Currently, most commercially available HBT-based integrated circuits employ the AlGaAs/GaAs material system in applications such as a 4-GHz gain block used in wireless phones. As modern systems require higher-performance and lower-cost devices, HBTs utilizing the newer, InGaP/GaAs and InP/InGaAs material systems will begin to dominate the HBT market. To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.

Compendium of Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA

NASA Technical Reports Server (NTRS)

Cochran, Donna J.; Boutte, Alvin J.; Chen, Dakai; Pellish, Jonathan A.; Ladbury, Raymond L.; Casey, Megan C.; Campola, Michael J.; Wilcox, Edward P.; Obryan, Martha V.; LaBel, Kenneth A.;

Highly anisotropic solar-blind UV photodetector based on large-size two-dimensional α-MoO3 atomic crystals

NASA Astrophysics Data System (ADS)

Zhong, Mianzeng; Zhou, Ke; Wei, Zhongming; Li, Yan; Li, Tao; Dong, Huanli; Jiang, Lang; Li, Jingbo; Hu, Wenping

2018-07-01

Orthorhombic MoO3 (α-MoO3) is a typical layered n-type semiconductor with optical band gap over 2.7 eV, which have been widely studied in catalysis, gas sensing, lithium-ion batteries, field-emission, photoelectrical, photochromic and electrochromic devices, supercapacitors and organic solar cells. However, the bottleneck of generation large size atomic thin two-dimensional (2D) α-MoO3 crystals remain challenging this field (normally several micrometers size). Herein, we developed a facile vapor–solid (VS) process for controllable growth of large-size 2D α-MoO3 single crystals with a few nanometers thick and over 300 μm in lateral size. High-performance solar-blind photodetectors were fabricated based on individual 2D α-MoO3 single crystal. The detectors demonstrate outstanding optoelectronic properties under solar-blind UV light (254 nm), with a photoresponsivity of 67.9 A W‑1, external quantum efficiency of 3.3  ×  104%. More important, the devices showed strong in-plane anisotropy in optoelectronic response and transport properties, e.g. the photocurrent along b-axis was found to be 5 times higher than the values along c-axis under 254 nm UV light, and current ON/OFF ratio and mobility anisotropy is about 2 times high. Our work suggests an optimized synthesis routine for 2D crystals, and the great potential of 2D oxides in functional optoelectronics.

Metal-insulator-semiconductor heterostructures for plasmonic hot-carrier optoelectronics.

PubMed

García de Arquer, F Pelayo; Konstantatos, Gerasimos

2015-06-01

Plasmonic hot-electron devices are attractive candidates for light-energy harvesting and photodetection applications. For solid state devices, the most compact and straightforward architecture is the metal-semiconductor Schottky junction. However convenient, this structure introduces limitations such as the elevated dark current associated to thermionic emission, or constraints for device design due to the finite choice of materials. In this work we theoretically consider the metal-insulator-semiconductor heterojunction as a candidate for plasmonic hot-carrier photodetection and solar cells. The presence of the insulating layer can significantly reduce the dark current, resulting in increased device performance with predicted solar power conversion efficiencies up to 9%. For photodetection, the sensitivity can be extended well into the infrared by a judicious choice of the insulating layer, with up to 300-fold expected enhancement in detectivity.

Co-deposition methods for the fabrication of organic optoelectronic devices

DOEpatents

Thompson, Mark E.; Liu, Zhiwei; Wu, Chao

2016-09-06

A method for fabricating an OLED by preparing phosphorescent metal complexes in situ is provided. In particular, the method simultaneously synthesizes and deposits copper (I) complexes in an organic light emitting device. Devices comprising such complexes may provide improved photoluminescent and electroluminescent properties.

Inkjet-printed optoelectronics.

PubMed

Zhan, Zhaoyao; An, Jianing; Wei, Yuefan; Tran, Van Thai; Du, Hejun

2017-01-19

Inkjet printing is a powerful and cost-effective technique for deposition of liquid inks with high accuracy, which is not only of great significance for graphic applications but also has enormous potential for the direct printing of optoelectronic devices. This review highlights a comprehensive overview of the progress that has been made in optoelectronics fabrication by the inkjet printing technique. The first part briefly covers the droplet-generation process in the nozzles of printheads and the physical properties affecting droplet formation and the profiles of the printed patterns. The second section outlines the recent activities related to applications of inkjet printing in optoelectronics fabrication including solar cells, light-emitting diodes, photodetectors and transparent electrodes. In each application field, the challenges with the inkjet printing process and the possible solutions are discussed before a few remarks. In the last section, a brief summary on the progress of inkjet printing fabrication of optoelectronics and an outlook for future research effort are presented.

Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

NASA Astrophysics Data System (ADS)

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-07-01

Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

Transparent, Flexible Silicon Nanostructured Wire Networks with Seamless Junctions for High-Performance Photodetector Applications.

PubMed

Hossain, Mozakkar; Kumar, Gundam Sandeep; Barimar Prabhava, S N; Sheerin, Emmet D; McCloskey, David; Acharya, Somobrata; Rao, K D M; Boland, John J

2018-05-22

Optically transparent photodetectors are crucial in next-generation optoelectronic applications including smart windows and transparent image sensors. Designing photodetectors with high transparency, photoresponsivity, and robust mechanical flexibility remains a significant challenge, as is managing the inevitable trade-off between high transparency and strong photoresponse. Here we report a scalable method to produce flexible crystalline Si nanostructured wire (NW) networks fabricated from silicon-on-insulator (SOI) with seamless junctions and highly responsive porous Si segments that combine to deliver exceptional performance. These networks show high transparency (∼92% at 550 nm), broadband photodetection (350 to 950 nm) with excellent responsivity (25 A/W), optical response time (0.58 ms), and mechanical flexibility (1000 cycles). Temperature-dependent photocurrent measurements indicate the presence of localized electronic states in the porous Si segments, which play a crucial role in light harvesting and photocarrier generation. The scalable low-cost approach based on SOI has the potential to deliver new classes of flexible optoelectronic devices, including next-generation photodetectors and solar cells.

Vapour-Deposited Cesium Lead Iodide Perovskites: Microsecond Charge Carrier Lifetimes and Enhanced Photovoltaic Performance

PubMed Central

2017-01-01

Metal halide perovskites such as methylammonium lead iodide (MAPbI3) are highly promising materials for photovoltaics. However, the relationship between the organic nature of the cation and the optoelectronic quality remains debated. In this work, we investigate the optoelectronic properties of fully inorganic vapour-deposited and spin-coated black-phase CsPbI3 thin films. Using the time-resolved microwave conductivity technique, we measure charge carrier mobilities up to 25 cm2/(V s) and impressively long charge carrier lifetimes exceeding 10 μs for vapour-deposited CsPbI3, while the carrier lifetime reaches less than 0.2 μs in the spin-coated samples. Finally, we show that these improved lifetimes result in enhanced device performance with power conversion efficiencies close to 9%. Altogether, these results suggest that the charge carrier mobility and recombination lifetime are mainly dictated by the inorganic framework rather than the organic nature of the cation. PMID:28852710

Light-induced lattice expansion leads to high-efficiency perovskite solar cells.

PubMed

Tsai, Hsinhan; Asadpour, Reza; Blancon, Jean-Christophe; Stoumpos, Constantinos C; Durand, Olivier; Strzalka, Joseph W; Chen, Bo; Verduzco, Rafael; Ajayan, Pulickel M; Tretiak, Sergei; Even, Jacky; Alam, Muhammad Ashraf; Kanatzidis, Mercouri G; Nie, Wanyi; Mohite, Aditya D

2018-04-06

Light-induced structural dynamics plays a vital role in the physical properties, device performance, and stability of hybrid perovskite-based optoelectronic devices. We report that continuous light illumination leads to a uniform lattice expansion in hybrid perovskite thin films, which is critical for obtaining high-efficiency photovoltaic devices. Correlated, in situ structural and device characterizations reveal that light-induced lattice expansion benefits the performances of a mixed-cation pure-halide planar device, boosting the power conversion efficiency from 18.5 to 20.5%. The lattice expansion leads to the relaxation of local lattice strain, which lowers the energetic barriers at the perovskite-contact interfaces, thus improving the open circuit voltage and fill factor. The light-induced lattice expansion did not compromise the stability of these high-efficiency photovoltaic devices under continuous operation at full-spectrum 1-sun (100 milliwatts per square centimeter) illumination for more than 1500 hours. Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Physical Design and Dynamical Analysis of Resonant-Antiresonant Ag/MgO/GaSe/Al Optoelectronic Microwave Devices

NASA Astrophysics Data System (ADS)

Kmail, Renal R. N.; Qasrawi, A. F.

2015-11-01

In this work, the design and optical and electrical properties of MgO/GaSe heterojunction devices are reported and discussed. The device was designed using 0.4- μm-thick n-type GaSe as substrate for a 1.6- μm-thick p-type MgO optoelectronic window. The device was characterized by means of ultraviolet-visible optical spectrophotometry in the wavelength region from 200 nm to 1100 nm, current-voltage ( I- V) characteristics, impedance spectroscopy in the range from 1.0 MHz to 1.8 GHz, and microwave amplitude spectroscopy in the frequency range from 1.0 MHz to 3.0 GHz. Optical analysis of the MgO/GaSe heterojunction revealed enhanced absorbing ability of the GaSe below 2.90 eV with an energy bandgap shift from 2.10 eV for the GaSe substrate to 1.90 eV for the heterojunction design. On the other hand, analysis of I- V characteristics revealed a tunneling-type device conducting current by electric field-assisted tunneling of charged particles through a barrier with height of 0.81 eV and depletion region width of 670 nm and 116 nm when forward and reverse biased, respectively. Very interesting features of the device are observed when subjected to alternating current (ac) signal analysis. In particular, the device exhibited resonance-antiresonance behavior and negative capacitance characteristics near 1.0 GHz. The device quality factor was ˜102. In addition, when a small ac signal of Bluetooth amplitude (0.0 dBm) was imposed between the device terminals, the power spectra of the device displayed tunable band-stop filter characteristics with maximum notch frequency of 1.6 GHz. The energy bandgap discontinuity, the resonance-antiresonance behavior, the negative capacitance features, and the tunability of the electromagnetic power spectra at microwave frequencies nominate the Ag/MgO/GaSe/Al device as a promising optoelectronic device for use in multipurpose operations at microwave frequencies.

Optoelectronic aid for patients with severely restricted visual fields in daylight conditions

NASA Astrophysics Data System (ADS)

Peláez-Coca, María Dolores; Sobrado-Calvo, Paloma; Vargas-Martín, Fernando

2011-11-01

In this study we evaluated the immediate effectiveness of an optoelectronic visual field expander in a sample of subjects with retinitis pigmentosa suffering from a severe peripheral visual field restriction. The aid uses the augmented view concept and provides subjects with visual information from outside their visual field. The tests were carried out in daylight conditions. The optoelectronic aid comprises a FPGA (real-time video processor), a wide-angle mini camera and a transparent see-through head-mounted display. This optoelectronic aid is called SERBA (Sistema Electro-óptico Reconfigurable de Ayuda para Baja Visión). We previously showed that, without compromising residual vision, the SERBA system provides information about objects within an area about three times greater on average than the remaining visual field of the subjects [1]. In this paper we address the effects of the device on mobility under daylight conditions with and without SERBA. The participants were six subjects with retinitis pigmentosa. In this mobility test, better results were obtained when subjects were wearing the SERBA system; specifically, both the number of contacts with low-level obstacles and mobility errors decreased significantly. A longer training period with the device might improve its usefulness.

Optoelectronic Devices, Sensors, Communication and Multimedia, Photonics Applications and Web Engineering, Wilga, May 2012

NASA Astrophysics Data System (ADS)

Romaniuk, Ryszard S.

2012-05-01

This paper is the fourth part (out of five) of the research survey of WILGA Symposium work, May 2012 Edition, concerned with Optoelectronic Devices, Sensors, Communication and Multimedia (Video and Audio) technologies. It presents a digest of chosen technical work results shown by young researchers from different technical universities from this country during the Jubilee XXXth SPIE-IEEE Wilga 2012, May Edition, symposium on Photonics and Web Engineering. Topical tracks of the symposium embraced, among others, nanomaterials and nanotechnologies for photonics, sensory and nonlinear optical fibers, object oriented design of hardware, photonic metrology, optoelectronics and photonics applications, photonics-electronics co-design, optoelectronic and electronic systems for astronomy and high energy physics experiments, JET tokamak and pi-of-the sky experiments development. The symposium is an annual summary in the development of numerable Ph.D. theses carried out in this country in the area of advanced electronic and photonic systems. It is also a great occasion for SPIE, IEEE, OSA and PSP students to meet together in a large group spanning the whole country with guests from this part of Europe. A digest of Wilga references is presented [1-270].

Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects

NASA Astrophysics Data System (ADS)

Gao, Yuanda

Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects. After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz. On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ?0.1 dB/?m transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed. The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.

Surface structure, optoelectronic properties and charge transport in ZnO nanocrystal/MDMO-PPV multilayer films.

PubMed

Lian, Qing; Chen, Mu; Mokhtar, Muhamad Z; Wu, Shanglin; Zhu, Mingning; Whittaker, Eric; O'Brien, Paul; Saunders, Brian R

2018-05-07

Blends of semiconducting nanocrystals and conjugated polymers continue to attract major research interest because of their potential applications in optoelectronic devices, such as solar cells, photodetectors and light-emitting diodes. In this study we investigate the surface structure, morphological and optoelectronic properties of multilayer films constructed from ZnO nanocrystals (NCs) and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV). The effects of layer number and ZnO concentration (C ZnO ) used on the multilayer film properties are investigated. An optimised solvent blend enabled well-controlled layers to be sequentially spin coated and the construction of multilayer films containing six ZnO NC (Z) and MDMO-PPV (M) layers (denoted as (ZM) 6 ). Contact angle data showed a strong dependence on C ZnO and indicated distinct differences in the coverage of MDMO-PPV by the ZnO NCs. UV-visible spectroscopy showed that the MDMO-PPV absorption increased linearly with the number of layers in the films and demonstrates highly tuneable light absorption. Photoluminescence spectra showed reversible quenching as well as a surprising red-shift of the MDMO-PPV emission peak. Solar cells were constructed to probe vertical photo-generated charge transport. The measurements showed that (ZM) 6 devices prepared using C ZnO = 14.0 mg mL -1 had a remarkably high open circuit voltage of ∼800 mV. The device power conversion efficiency was similar to that of a control bilayer device prepared using a much thicker MDMO-PPV layer. The results of this study provide insight into the structure-optoelectronic property relationships of new semiconducting multilayer films which should also apply to other semiconducting NC/polymer combinations.

The Impact of Acceptor-Acceptor Homocoupling on the Optoelectronic Properties and Photovoltaic Performance of PDTSQxff Low Bandgap Polymers.

PubMed

Pirotte, Geert; Kesters, Jurgen; Cardeynaels, Tom; Verstappen, Pieter; D'Haen, Jan; Lutsen, Laurence; Champagne, Benoît; Vanderzande, Dirk; Maes, Wouter

2018-04-22

Push-pull-type conjugated polymers applied in organic electronics do not always contain a perfect alternation of donor and acceptor building blocks. Misscouplings can occur, which have a noticeable effect on the device performance. In this work, the influence of homocoupling on the optoelectronic properties and photovoltaic performance of PDTSQx ff polymers is investigated, with a specific focus on the quinoxaline acceptor moieties. A homocoupled biquinoxaline segment is intentionally inserted in specific ratios during the polymerization. These homocoupled units cause a gradually blue-shifted absorption, while the highest occupied molecular orbital energy levels decrease only significantly upon the presence of 75-100% of homocouplings. Density functional theory calculations show that the homocoupled acceptor unit generates a twist in the polymer backbone, which leads to a decreased conjugation length and a reduced aggregation tendency. The virtually defect-free PDTSQx ff affords a solar cell efficiency of 5.4%, which only decreases substantially upon incorporating a homocoupling degree over 50%. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Selective Processing Techniques for Electronics and Opto-Electronic Applications: Quantum-Well Devices and Integrated Optic Circuits

DTIC Science & Technology

1993-02-10

new technology is to have sufficient control of processing to *- describable by an appropriate elecromagnetic model . build useful devices. For example...3. W aveguide Modulators .................................. 7 B. Integrated Optical Device and Circuit Modeling ... ................... .. 10 C...following categories: A. Integrated Optical Devices and Technology B. Integrated Optical Device and Circuit Modeling C. Cryogenic Etching for Low

Hybrid Silicon Nanocrystal/Poly(3-hexylthiophene-2,5-diyl) Solar Cells from a Chlorinated Silicon Precursor

NASA Astrophysics Data System (ADS)

Ding, Yi; Gresback, Ryan; Yamada, Riku; Okazaki, Ken; Nozaki, Tomohiro

2013-11-01

Freestanding silicon nanocrystals (Si NCs) synthesized by a nonthermal plasma from silicon tetrachloride (SiCl4) were successfully employed in hybrid Si NC/poly(3-hexylthiophene-2,5-diyl) (P3HT) bulk-hetrojunction (BHJ) solar cells. The weight fraction of Si NCs in P3HT greatly influences device performance. As the weight fraction increases up to 50 wt %, short-circuit current dramatically increases, while open-circuit voltage (Voc) and fill factor (FF) do not change significantly. The improvement in device performance is attributed to both increased probability of exciton dissociation in P3HT and an enhancement in the light conversion of wavelengths where P3HT is a poor absorber. These results demonstrate an alternative approach to synthesizing Si NCs from SiCl4 instead of silane (SiH4) for optoelectronic devices.

Soluble fullerene derivatives: The effect of electronic structure on transistor performance and air stability

NASA Astrophysics Data System (ADS)

Ball, James M.; Bouwer, Ricardo K. M.; Kooistra, Floris B.; Frost, Jarvist M.; Qi, Yabing; Domingo, Ester Buchaca; Smith, Jeremy; de Leeuw, Dago M.; Hummelen, Jan C.; Nelson, Jenny; Kahn, Antoine; Stingelin, Natalie; Bradley, Donal D. C.; Anthopoulos, Thomas D.

2011-07-01

The family of soluble fullerene derivatives comprises a widely studied group of electron transporting molecules for use in organic electronic and optoelectronic devices. For electronic applications, electron transporting (n-channel) materials are required for implementation into organic complementary logic circuit architectures. To date, few soluble candidate materials have been studied that fulfill the stringent requirements of high carrier mobility and air stability. Here we present a study of three soluble fullerenes with varying electron affinity to assess the impact of electronic structure on device performance and air stability. Through theoretical and experimental analysis of the electronic structure, characterization of thin-film structure, and characterization of transistor device properties we find that the air stability of the present series of fullerenes not only depends on the absolute electron affinity of the semiconductor but also on the disorder within the thin-film.

The donor-supply electrode enhances performance in colloidal quantum dot solar cells.

PubMed

Maraghechi, Pouya; Labelle, André J; Kirmani, Ahmad R; Lan, Xinzheng; Adachi, Michael M; Thon, Susanna M; Hoogland, Sjoerd; Lee, Anna; Ning, Zhijun; Fischer, Armin; Amassian, Aram; Sargent, Edward H

2013-07-23

Colloidal quantum dot (CQD) solar cells combine solution-processability with quantum-size-effect tunability for low-cost harvesting of the sun's broad visible and infrared spectrum. The highest-performing colloidal quantum dot solar cells have, to date, relied on a depleted-heterojunction architecture in which an n-type transparent metal oxide such as TiO2 induces a depletion region in the p-type CQD solid. These devices have, until now, been limited by a modest depletion region depth produced in the CQD solid owing to limitations in the doping available in TiO2. Herein we report a new device geometry-one based on a donor-supply electrode (DSE)-that leads to record-performing CQD photovoltaic devices. Only by employing this new charge-extracting approach do we deepen the depletion region in the CQD solid and thereby extract notably more photocarriers, the key element in achieving record photocurrent and device performance. With the use of optoelectronic modeling corroborated by experiment, we develop the guidelines for building a superior CQD solar cell based on the DSE concept. We confirm that using a shallow-work-function terminal electrode is essential to producing improved charge extraction and enhanced performance.

2,5-linked polyfluorenes for optoelectronic devices

DOEpatents

Cella, James Anthony; Shiang, Joseph John; Shanklin, Elliott West; Smigelski, Paul Michael

2010-06-08

Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

2,5-linked polyfluorenes for optoelectronic devices

DOEpatents

Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY; Shanklin, Elliott West [Altamont, NY; Smigelski, Jr, Paul Michael

2011-06-28

Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

2,5-linked polyfluorenes for optoelectronic devices

DOEpatents

Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY; Shanklin, Elliott West [Altamont, NY; Smigelski, Paul Michael [Scotia, NY

2009-12-22

Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

2,5-linked polyfluorenes for optoelectronic devices

DOEpatents

Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY; Shanklin, Elliott West [Altamont, NY; Smigelski, Jr., Paul Michael

2011-11-08

Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

Structured organic materials and devices using low-energy particle beams

DOEpatents

Vardeny, Z. Valy; Li, Sergey; Delong, Matthew C.; Jiang, Xiaomei

2005-09-13

Organic materials exposed to an electron beam for patterning a substrate (1) to make an optoelectronic organic device which includes a source, a drain, gate dielectric layer (4), and a substrate for emitting light.

Electrical characteristics of silicon nanowire CMOS inverters under illumination.

PubMed

Yoo, Jeuk; Kim, Yoonjoong; Lim, Doohyeok; Kim, Sangsig

2018-02-05

In this study, we examine the electrical characteristics of complementary metal-oxide-semiconductor (CMOS) inverters with silicon nanowire (SiNW) channels on transparent substrates under illumination. The electrical characteristics vary with the wavelength and power of light due to the variation in the generation rates of the electric-hole pairs. Compared to conventional optoelectronic devices that sense the on/off states by the variation in the current, our device achieves the sensing of the on/off states with more precision by using the voltage variation induced by the wavelength or intensity of light. The device was fabricated on transparent substrates to maximize the light absorption using conventional CMOS technologies. The key difference between our SiNW CMOS inverters and conventional optoelectronic devices is the ability to control the flow of charge carriers more effectively. The improved sensitivity accomplished with the use of SiNW CMOS inverters allows better control of the on/off states.

A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

NASA Astrophysics Data System (ADS)

Zhang, Teng-Fei; Wu, Guo-An; Wang, Jiu-Zhen; Yu, Yong-Qiang; Zhang, Deng-Yue; Wang, Dan-Dan; Jiang, Jing-Bo; Wang, Jia-Mu; Luo, Lin-Bao

2017-08-01

In this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

Current Total Ionizing Dose Results and Displacement Damage Results for Candidate Spacecraft Electronics for NASA

NASA Technical Reports Server (NTRS)

Cochran, Donna J.; Kniffin, Scott D.; LaBel, Kenneth A.; OBryan, Martha V.; Reed, Robert A.; Ladbury, Ray L.; Howard, James W., Jr.; Poivey, Christian; Buchner, Stephen P.; Marshall, Cheryl J.

2004-01-01

We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to-Digital Converters (ADCs), and Digital-to-Analog Converters (DACS), among others.

Total Ionizing Dose Results and Displacement Damage Results for Candidate Spacecraft Electronics for NASA

NASA Technical Reports Server (NTRS)

Cochran, Donna J.; Kniffin, Scott D.; LaBel, Kenneth A.; OBryan, Martha V.; Reed, Robert A.; Ladbury, Ray L.; Howard, James W., Jr.; Poivey, Christian; Buchner, Stephen P.; Marshall, Cheryl J.

2003-01-01

We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to-Digital Converters (ADCs), and Digital-to-Analog Converters (DACs), among others.

[Performance dependence of organic light-emitting devices on the thickness of Alq3 emitting layer].

PubMed

Lian, Jia-rong; Liao, Qiao-sheng; Yang, Rui-bo; Zheng, Wei; Zeng, Peng-ju

2010-10-01

The dependence of opto-electronical characteristics in organic light-emitting devices on the thickness of Alq3 emitter layer was studied, where MoO3, NPB, and Alq3 were used as hole injector, hole transporter, and emitter/electron transporter, respectively. By increasing the thickness of Alq3 layer from 20 to 100 nm, the device current decreased gradually, and the EL spectra of devices performed a little red shift with an obvious broadening in long wavelength range but a little decrease in intensity of short wavelength range. The authors simulated the EL spectra using the photoluminescence (PL) spectra of Alq3 as Alq3 intrinsic emission, which coincided with the experimental EL spectra well. The simulated results suggested that the effect of interference takes the major role in broadening the long wavelength range of EL spectra, and the distribution of emission zone largely affects the profile of EL spectra in short wavelength range.

A molecular nematic liquid crystalline material for high-performance organic photovoltaics

PubMed Central

Sun, Kuan; Xiao, Zeyun; Lu, Shirong; Zajaczkowski, Wojciech; Pisula, Wojciech; Hanssen, Eric; White, Jonathan M.; Williamson, Rachel M.; Subbiah, Jegadesan; Ouyang, Jianyong; Holmes, Andrew B.; Wong, Wallace W.H.; Jones, David J.

2015-01-01

Solution-processed organic photovoltaic cells (OPVs) hold great promise to enable roll-to-roll printing of environmentally friendly, mechanically flexible and cost-effective photovoltaic devices. Nevertheless, many high-performing systems show best power conversion efficiencies (PCEs) with a thin active layer (thickness is ~100 nm) that is difficult to translate to roll-to-roll processing with high reproducibility. Here we report a new molecular donor, benzodithiophene terthiophene rhodanine (BTR), which exhibits good processability, nematic liquid crystalline behaviour and excellent optoelectronic properties. A maximum PCE of 9.3% is achieved under AM 1.5G solar irradiation, with fill factor reaching 77%, rarely achieved in solution-processed OPVs. Particularly promising is the fact that BTR-based devices with active layer thicknesses up to 400 nm can still afford high fill factor of ~70% and high PCE of ~8%. Together, the results suggest, with better device architectures for longer device lifetime, BTR is an ideal candidate for mass production of OPVs. PMID:25586307

Spectroscopic Ellipsometry Studies of n-i-p Hydrogenated Amorphous Silicon Based Photovoltaic Devices

PubMed Central

Karki Gautam, Laxmi; Junda, Maxwell M.; Haneef, Hamna F.; Collins, Robert W.; Podraza, Nikolas J.

2016-01-01

Optimization of thin film photovoltaics (PV) relies on characterizing the optoelectronic and structural properties of each layer and correlating these properties with device performance. Growth evolution diagrams have been used to guide production of materials with good optoelectronic properties in the full hydrogenated amorphous silicon (a-Si:H) PV device configuration. The nucleation and evolution of crystallites forming from the amorphous phase were studied using in situ near-infrared to ultraviolet spectroscopic ellipsometry during growth of films prepared as a function of hydrogen to reactive gas flow ratio R = [H2]/[SiH4]. In conjunction with higher photon energy measurements, the presence and relative absorption strength of silicon-hydrogen infrared modes were measured by infrared extended ellipsometry measurements to gain insight into chemical bonding. Structural and optical models have been developed for the back reflector (BR) structure consisting of sputtered undoped zinc oxide (ZnO) on top of silver (Ag) coated glass substrates. Characterization of the free-carrier absorption properties in Ag and the ZnO + Ag interface as well as phonon modes in ZnO were also studied by spectroscopic ellipsometry. Measurements ranging from 0.04 to 5 eV were used to extract layer thicknesses, composition, and optical response in the form of complex dielectric function spectra (ε = ε1 + iε2) for Ag, ZnO, the ZnO + Ag interface, and undoped a-Si:H layer in a substrate n-i-p a-Si:H based PV device structure. PMID:28773255

Metasurfaces Based on Phase-Change Material as a Reconfigurable Platform for Multifunctional Devices

PubMed Central

Raeis-Hosseini, Niloufar; Rho, Junsuk

2017-01-01

Integration of phase-change materials (PCMs) into electrical/optical circuits has initiated extensive innovation for applications of metamaterials (MMs) including rewritable optical data storage, metasurfaces, and optoelectronic devices. PCMs have been studied deeply due to their reversible phase transition, high endurance, switching speed, and data retention. Germanium-antimony-tellurium (GST) is a PCM that has amorphous and crystalline phases with distinct properties, is bistable and nonvolatile, and undergoes a reliable and reproducible phase transition in response to an optical or electrical stimulus; GST may therefore have applications in tunable photonic devices and optoelectronic circuits. In this progress article, we outline recent studies of GST and discuss its advantages and possible applications in reconfigurable metadevices. We also discuss outlooks for integration of GST in active nanophotonic metadevices. PMID:28878196

Enhanced photoresponse of monolayer molybdenum disulfide (MoS2) based on microcavity structure

NASA Astrophysics Data System (ADS)

Lu, Yanan; Yang, Guofeng; Wang, Fuxue; Lu, Naiyan

2018-05-01

There is an increasing interest in using monolayer molybdenum disulfide (MoS2) for optoelectronic devices because of its inherent direct band gap characteristics. However, the weak absorption of monolayer MoS2 restricts its applications, novel concepts need to be developed to address the weakness. In this work, monolayer MoS2 monolithically integrates with plane microcavity structure, which is formed by the top and bottom chirped distributed Bragg reflector (DBR), is demonstrated to improve the absorption of MoS2. The optical absorption is 17-fold enhanced, reaching values over 70% at work wavelength. Moreover, the monolayer MoS2-based photodetector device with microcavity presents a significantly increased photoresponse, demonstrating its promising prospects in MoS2-based optoelectronic devices.

Solution-Processed Metal Oxides as Efficient Carrier Transport Layers for Organic Photovoltaics.

PubMed

Choy, Wallace C H; Zhang, Di

2016-01-27

Carrier (electron and hole) transport layers (CTLs) are essential components for boosting the performance of various organic optoelectronic devices such as organic solar cells and organic light-emitting diodes. Considering the drawbacks of conventional CTLs (easily oxidized/unstable, demanding/costly fabrication, etc.), transition metal oxides with good carrier transport/extraction and superior stability have drawn extensive research interest as CTLs for next-generation devices. In recent years, many research efforts have been made toward the development of solution-based metal oxide CTLs with the focus on low- or even room-temperature processes, which can potentially be compatible with the deposition processes of organic materials and can significantly contribute to the low-cost and scale-up of organic devices. Here, the recent progress of different types of solution-processed metal oxide CTLs are systematically reviewed in the context of organic photovoltaics, from synthesis approaches to device performance. Different approaches for further enhancing the performance of solution-based metal oxide CTLs are also discussed, which may push the future development of this exciting field. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Strain induced optical properties of BaReO3

NASA Astrophysics Data System (ADS)

Kumavat, Sandip R.; Kansara, Shivam; Gupta, Sanjeev K.; Sonvane, Yogesh

2018-05-01

Here, we have performed strain induce optical properties of BaReO3 by using density functional theory (DFT). We noticed that after applying intrinsic and extrinsic strain to the BaReO3, it shows the metallic behavior. We also studied optical properties, which show good activity in the ultraviolet region. The results show that after applying intrinsic and extrinsic strain to BaReO3 the absorption peaks are shifted towards the high UV region of the spectrum. Thus, we concluded that, BaReO3 material with extrinsic strain can be useful for high frequency UV device and optoelectronic devices.

Contact planarization of ensemble nanowires

NASA Astrophysics Data System (ADS)

Chia, A. C. E.; LaPierre, R. R.

2011-06-01

The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

Contact planarization of ensemble nanowires.

PubMed

Chia, A C E; LaPierre, R R

2011-06-17

The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

Oxide Heteroepitaxy for Flexible Optoelectronics.

PubMed

Bitla, Yugandhar; Chen, Ching; Lee, Hsien-Chang; Do, Thi Hien; Ma, Chun-Hao; Qui, Le Van; Huang, Chun-Wei; Wu, Wen-Wei; Chang, Li; Chiu, Po-Wen; Chu, Ying-Hao

2016-11-30

The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts. With the examples of ITO and AZO as a case study, a strong emphasis is laid upon the growth of flexible yet epitaxial TCO relying muscovite's superior properties compared to those of conventional flexible substrates and its compatibility with the present fabrication methods. Besides excellent optoelectro-mechanical properties, an additional functionality of high-temperature stability, normally lacking in the current state-of-the-art transparent flexitronics, is provided by these heterostructures. These epitaxial TCO electrodes with good chemical and thermal stabilities as well as mechanical durability can significantly contribute to the field of flexible, light-weight, and portable smart electronics.

Fabrication of p-type CuO thin films using chemical bath deposition technique and their solar cell applications with Si nanowires

NASA Astrophysics Data System (ADS)

Akgul, Funda Aksoy; Akgul, Guvenc

2017-02-01

Recently, CuO has attracted much interest owing to its suitable material properties, inexpensive fabrication cost and potential applications for optoelectronic devices. In this study, CuO thin films were deposited on glass substrates using chemical bath deposition technique and post-deposition annealing effect on the properties of the prepared samples were investigated. p-n heterojunction solar cells were then constructed by coating of p-type CuO films onto the vertically well-aligned n-type Si nanowires synthesized through MACE method. Photovoltaic performance of the fabricated devices were determined with current-voltage (I-V) measurements under AM 1.5 G illumination. The optimal short-circuit current density, open-circuit voltage, fill factor and power conversion efficiency were found to be 3.2 mA/cm-2, 337 mV, 37.9 and 0.45%, respectively. The observed performance clearly indicates that the investigated device structure could be a promising candidate for high-performance low-cost new-generation photovoltaic diodes.

Cooperative Lamb shift and superradiance in an optoelectronic device

NASA Astrophysics Data System (ADS)

Frucci, G.; Huppert, S.; Vasanelli, A.; Dailly, B.; Todorov, Y.; Beaudoin, G.; Sagnes, I.; Sirtori, C.

2017-04-01

When a single excitation is shared between a large number of two-level systems, a strong enhancement of the spontaneous emission appears. This phenomenon is known as superradiance. This enhanced rate can be accompanied by a shift of the emission frequency, the cooperative Lamb shift, issued from the exchange of virtual photons between the emitters. In this work we present a semiconductor optoelectronic device allowing the observation of these two phenomena at room temperature. We demonstrate experimentally and theoretically that plasma oscillations in spatially separated quantum wells interact through real and virtual photon exchange. This gives rise to a superradiant mode displaying a large cooperative Lamb shift.

Precise, Self-Limited Epitaxy of Ultrathin Organic Semiconductors and Heterojunctions Tailored by van der Waals Interactions.

PubMed

Wu, Bing; Zhao, Yinghe; Nan, Haiyan; Yang, Ziyi; Zhang, Yuhan; Zhao, Huijuan; He, Daowei; Jiang, Zonglin; Liu, Xiaolong; Li, Yun; Shi, Yi; Ni, Zhenhua; Wang, Jinlan; Xu, Jian-Bin; Wang, Xinran

2016-06-08

Precise assembly of semiconductor heterojunctions is the key to realize many optoelectronic devices. By exploiting the strong and tunable van der Waals (vdW) forces between graphene and organic small molecules, we demonstrate layer-by-layer epitaxy of ultrathin organic semiconductors and heterostructures with unprecedented precision with well-defined number of layers and self-limited characteristics. We further demonstrate organic p-n heterojunctions with molecularly flat interface, which exhibit excellent rectifying behavior and photovoltaic responses. The self-limited organic molecular beam epitaxy (SLOMBE) is generically applicable for many layered small-molecule semiconductors and may lead to advanced organic optoelectronic devices beyond bulk heterojunctions.

Quaternary laser devices: history and state of the art

NASA Astrophysics Data System (ADS)

Eliseev, Petr G.

1993-05-01

Quaternary alloys of semiconductor compounds are suitable materials for wide-spectrum optoelectronic applications. The most important property of these efficient luminescent materials is the opportunity to fit the lattice parameter in some range to a given value corresponding to another crystalline material. This leads to the method to construct defect-free and stress-free heterojunctions, which was used for the preparation of a number of laser and LED devices. Quaternaries of InGaAsP, InGaSbAs, InSbAsP, PbSnTeSe, and other alloys were introduced into practical usage particularly in diode laser devices. The alloy InGaAsP appears to be one of the most widely used in optoelectronic applications at present as it covers ranges near 1.3 and 1.55 micrometers wavelengths of fiber-optic communication. For the spectral range near 2 micrometers the alloy InGaSbAs seems to be most attractive, and cw-operating diode lasers at room temperature were demonstrated at 2.0 - 2.4 micrometers . The alloy PbSnTeSe was used to obtain a longest wave of diode laser emission 46 micrometers . Quaternaries played an important role in the development of the semiconductor optoelectronics during the last two decades.

Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric

2010-09-21

Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shieldingmore » is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated its extreme radiation hardness using a 65 MeV proton beam line. The solar-blind AlGaN photodiodes retained ~50% responsivity up to 3x1012 protons/cm2 fluence. The Stanford-NSTec-SETI team will continue to develop radiation hard optoelectronic devices for applications under extreme conditions.« less

Ultrafast characterization of optoelectronic devices and systems

NASA Astrophysics Data System (ADS)

Zheng, Xuemei

The recent fast growth in high-speed electronics and optoelectronics has placed demanding requirements on testing tools. Electro-optic (EO) sampling is a well-established technique for characterization of high-speed electronic and optoelectronic devices and circuits. However, with the progress in device miniaturization, lower power consumption (smaller signal), and higher throughput (higher clock rate), EO sampling also needs to be updated, accordingly, towards better signal-to-noise ratio (SNR) and sensitivity, without speed sacrifice. In this thesis, a novel EO sampler with a single-crystal organic 4-dimethylamino-N-methy-4-stilbazolium tosylate (DAST) as the EO sensor is developed. The system exhibits sub-picosecond temporal resolution, sub-millivolt sensitivity, and a 10-fold improvement on SNR, compared with its LiTaO3 counterpart. The success is attributed to the very high EO coefficient, the very low dielectric constant, and the fast response, coming from the major contribution of the pi-electrons in DAST. With the advance of ultrafast laser technology, low-noise and compact femtosecond fiber lasers have come to maturation and become light-source options for ultrafast metrology systems. We have successfully integrated a femtosecond erbium-doped-fiber laser into an EO sampler, making the system compact and very reliable. The fact that EO sampling is essentially an impulse-response measurement process, requires integration of ultrashort (sub-picosecond) impulse generation network with the device under test. We have implemented a reliable lift-off and transfer technique in order to obtain epitaxial-quality freestanding low-temperature-grown GaAs (LT-GaAs) thin-film photo-switches, which can be integrated with many substrates. The photoresponse of our freestanding LT-GaAs devices was thoroughly characterized with the help of our EO sampler. As fast as 360 fs full-width-at-half-maximum (FWHM) and >1 V electrical pulses were obtained, with quantum efficiency reaching 54%. The response time was found to not depend on either the device bias or excitation power. Nitrogen-implanted GaAs is a novel ion-implanted semiconductor. Its intrinsic property of high density of incorporated defects due to the implantation process makes it a promising candidate for ultrafast photodetection. A novel photodetector based on N+-GaAs has been successfully fabricated and its performance was characterized, using again our EO sampler. Our photodetectors, based on N+-GaAs, exhibit ˜2.1 ps FWHM photoresponse and very high sensitivity.

Study of application and key technology of the high-energy laser weapon in optoelectronic countermeasure

NASA Astrophysics Data System (ADS)

Qu, Zhou; Xing, Hao; Wang, Dawei; Wang, Qiugui

2015-10-01

High-energy Laser weapon is a new-style which is developing rapidly nowadays. It is a one kind of direction energy weapon which can destroy the targets or make them invalid. High-energy Laser weapon has many merits such as concentrated energy, fast transmission, long operating range, satisfied precision, fast shift fire, anti-electromagnetic interference, reusability, cost-effectiveness. High-energy Laser weapon has huge potential for modern warfare since its laser beam launch attack to the target by the speed of light. High-energy Laser weapon can be deployed by multiple methods such as skyborne, carrier borne, vehicle-mounted, foundation, space platform. Besides the connection with command and control system, High-energy Laser weapon is consist of high-energy laser and beam steering. Beam steering is comprised of Large diameter launch system and Precision targeting systems. Meanwhile, beam steering includes the distance measurement of target location, detection system of television and infrared sensor, adaptive optical system of Laser atmospheric distortion correction. The development of laser technology is very fast in recent years. A variety of laser sources have been regarded as the key component in many optoelectronic devices. For directed energy weapon, the progress of laser technology has greatly improved the tactical effectiveness, such as increasing the range and strike precision. At the same time, the modern solid-state laser has become the ideal optical source for optical countermeasure, because it has high photoelectric conversion efficiency and small volume or weight. However, the total performance is limited by the mutual cooperation between different subsystems. The optical countermeasure is a complex technique after many years development. The key factor to evaluate the laser weapon can be formulated as laser energy density to target. This article elaborated the laser device technology of optoelectronic countermeasure and Photoelectric tracking technology. Also the allocation of optoelectronic countermeasure was discussed in this article. At last, this article prospected the future development of high-energy laser.

Self-assembled III-V quantum dots: potential for silicon optoelectronics

NASA Technical Reports Server (NTRS)

Leon, R.

2001-01-01

The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.

Piezoelectric Diffraction-Based Optical Switches

NASA Technical Reports Server (NTRS)

Spremo, Stevan; Fuhr, Peter; Schipper, John

2003-01-01

Piezoelectric diffraction-based optoelectronic devices have been invented to satisfy requirements for switching signals quickly among alternative optical paths in optical communication networks. These devices are capable of operating with switching times as short as microseconds or even nanoseconds in some cases.

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode.

PubMed

Jariwala, Deep; Sangwan, Vinod K; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L; Geier, Michael L; Marks, Tobin J; Lauhon, Lincoln J; Hersam, Mark C

2013-11-05

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10(4). This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics.

Structure and Growth Control of Organic–Inorganic Halide Perovskites for Optoelectronics: From Polycrystalline Films to Single Crystals

PubMed Central

Chen, Yani; He, Minhong; Peng, Jiajun; Sun, Yong

2016-01-01

Recently, organic–inorganic halide perovskites have sparked tremendous research interest because of their ground‐breaking photovoltaic performance. The crystallization process and crystal shape of perovskites have striking impacts on their optoelectronic properties. Polycrystalline films and single crystals are two main forms of perovskites. Currently, perovskite thin films have been under intensive investigation while studies of perovskite single crystals are just in their infancy. This review article is concentrated upon the control of perovskite structures and growth, which are intimately correlated for improvements of not only solar cells but also light‐emitting diodes, lasers, and photodetectors. We begin with the survey of the film formation process of perovskites including deposition methods and morphological optimization avenues. Strategies such as the use of additives, thermal annealing, solvent annealing, atmospheric control, and solvent engineering have been successfully employed to yield high‐quality perovskite films. Next, we turn to summarize the shape evolution of perovskites single crystals from three‐dimensional large sized single crystals, two‐dimensional nanoplates, one‐dimensional nanowires, to zero‐dimensional quantum dots. Siginificant functions of perovskites single crystals are highlighted, which benefit fundamental studies of intrinsic photophysics. Then, the growth mechanisms of the previously mentioned perovskite crystals are unveiled. Lastly, perspectives for structure and growth control of perovskites are outlined towards high‐performance (opto)electronic devices. PMID:27812463

Gate-tunable carbon nanotube–MoS2 heterojunction p-n diode

PubMed Central

Jariwala, Deep; Sangwan, Vinod K.; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L.; Geier, Michael L.; Marks, Tobin J.; Lauhon, Lincoln J.; Hersam, Mark C.

2013-01-01

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 104. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics. PMID:24145425

Chemical Intercalation of Topological Insulator Grid Nanostructures for High-Performance Transparent Electrodes.

PubMed

Guo, Yunfan; Zhou, Jinyuan; Liu, Yujing; Zhou, Xu; Yao, Fengrui; Tan, Congwei; Wu, Jinxiong; Lin, Li; Liu, Kaihui; Liu, Zhongfan; Peng, Hailin

2017-11-01

2D layered nanomaterials with strong covalent bonding within layers and weak van der Waals' interactions between layers have attracted tremendous interest in recent years. Layered Bi 2 Se 3 is a representative topological insulator material in this family, which holds promise for exploration of the fundamental physics and practical applications such as transparent electrode. Here, a simultaneous enhancement of optical transmittancy and electrical conductivity in Bi 2 Se 3 grid electrodes by copper-atom intercalation is presented. These Cu-intercalated 2D Bi 2 Se 3 electrodes exhibit high uniformity over large area and excellent stabilities to environmental perturbations, such as UV light, thermal fluctuation, and mechanical distortion. Remarkably, by intercalating a high density of copper atoms, the electrical and optical performance of Bi 2 Se 3 grid electrodes is greatly improved from 900 Ω sq -1 , 68% to 300 Ω sq -1 , 82% in the visible range; with better performance of 300 Ω sq -1 , 91% achieved in the near-infrared region. These unique properties of Cu-intercalated topological insulator grid nanostructures may boost their potential applications in high-performance optoelectronics, especially for infrared optoelectronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanocrystal sensitized photovoltaics and photodetectors with performance enhanced using ligand engineering

NASA Astrophysics Data System (ADS)

Schut, David M.; Williams, George M., Jr.; Arteaga, Stefan; Allen, Thomas L.; Novet, Thomas

2011-06-01

Nanocrystal quantum dot photovoltaics and photodetectors with performance optimized by engineering the nanocrystals size and the optoelectronic properties of the nanocrystal's chemical coating are reported. Due to the large surface-to-volume ratio inherent to nanocrystals, the surface effects of ligands used to chemically coat and passivate nanocrystals play a significant role in device performance. However, the optoelectronic properties of ligands are difficult to ascertain, as the band structure of the ligand-capped nanoparticle system is complex and difficult to model. Using density-of-states measurements, we demonstrate that modeling of electropositive and electronegative substituents and use of the Hammett equation, are useful tools in optimizing nanocrystal detector performance. A new particle, the Janus-II nanoparticles, developed using 'charge-donating' and 'charge-withdrawing' ligands distributed over opposite surfaces of the nanocrystal, is described. The polarizing ligands of the Janus-II nanoparticle form a degeneracy-splitting dipole, which reduces the overlap integral between excitonic states, and thus reduces the probability of carrier recombination, allowing carrier extraction to take place more efficiently. This is shown to allow increased photodetection efficiencies and to allow the capture of multiple exciton events in working photodetectors.

Electrical Stress Influences the Efficiency of CH3 NH3 PbI3 Perovskite Light Emitting Devices.

PubMed

Zhao, Lianfeng; Gao, Jia; Lin, YunHui L; Yeh, Yao-Wen; Lee, Kyung Min; Yao, Nan; Loo, Yueh-Lin; Rand, Barry P

2017-06-01

Organic-inorganic hybrid perovskite materials are emerging as semiconductors with potential application in optoelectronic devices. In particular, perovskites are very promising for light-emitting devices (LEDs) due to their high color purity, low nonradiative recombination rates, and tunable bandgap. Here, using pure CH 3 NH 3 PbI 3 perovskite LEDs with an external quantum efficiency (EQE) of 5.9% as a platform, it is shown that electrical stress can influence device performance significantly, increasing the EQE from an initial 5.9% to as high as 7.4%. Consistent with the enhanced device performance, both the steady-state photoluminescence (PL) intensity and the time-resolved PL decay lifetime increase after electrical stress, indicating a reduction in nonradiative recombination in the perovskite film. By investigating the temperature-dependent characteristics of the perovskite LEDs and the cross-sectional elemental depth profile, it is proposed that trap reduction and resulting device-performance enhancement is due to local ionic motion of excess ions, likely excess mobile iodide, in the perovskite film that fills vacancies and reduces interstitial defects. On the other hand, it is found that overstressed LEDs show irreversibly degraded device performance, possibly because ions initially on the perovskite lattice are displaced during extended electrical stress and create defects such as vacancies. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

PubMed

Xie, Chao; Nie, Biao; Zeng, Longhui; Liang, Feng-Xia; Wang, Ming-Zheng; Luo, Linbao; Feng, Mei; Yu, Yongqiang; Wu, Chun-Yan; Wu, Yucheng; Yu, Shu-Hong

2014-04-22

Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

Heterojunction PbS nanocrystal solar cells with oxide charge-transport layers.

PubMed

Hyun, Byung-Ryool; Choi, Joshua J; Seyler, Kyle L; Hanrath, Tobias; Wise, Frank W

2013-12-23

Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Room-temperature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures.

Functionalized graphene and other two-dimensional materials for photovoltaic devices: device design and processing.

PubMed

Liu, Zhike; Lau, Shu Ping; Yan, Feng

2015-08-07

Graphene is the thinnest two-dimensional (2D) carbon material and has many advantages including high carrier mobilities and conductivity, high optical transparency, excellent mechanical flexibility and chemical stability, which make graphene an ideal material for various optoelectronic devices. The major applications of graphene in photovoltaic devices are for transparent electrodes and charge transport layers. Several other 2D materials have also shown advantages in charge transport and light absorption over traditional semiconductor materials used in photovoltaic devices. Great achievements in the applications of 2D materials in photovoltaic devices have been reported, yet numerous challenges still remain. For practical applications, the device performance should be further improved by optimizing the 2D material synthesis, film transfer, surface functionalization and chemical/physical doping processes. In this review, we will focus on the recent advances in the applications of graphene and other 2D materials in various photovoltaic devices, including organic solar cells, Schottky junction solar cells, dye-sensitized solar cells, quantum dot-sensitized solar cells, other inorganic solar cells, and perovskite solar cells, in terms of the functionalization techniques of the materials, the device design and the device performance. Finally, conclusions and an outlook for the future development of this field will be addressed.

A new method for motion capture of the scapula using an optoelectronic tracking device: a feasibility study.

PubMed

Šenk, Miroslav; Chèze, Laurence

2010-06-01

Optoelectronic tracking systems are rarely used in 3D studies examining shoulder movements including the scapula. Among the reasons is the important slippage of skin markers with respect to scapula. Methods using electromagnetic tracking devices are validated and frequently applied. Thus, the aim of this study was to develop a new method for in vivo optoelectronic scapular capture dealing with the accepted accuracy issues of validated methods. Eleven arm positions in three anatomical planes were examined using five subjects in static mode. The method was based on local optimisation, and recalculation procedures were made using a set of five scapular surface markers. The scapular rotations derived from the recalculation-based method yielded RMS errors comparable with the frequently used electromagnetic scapular methods (RMS up to 12.6° for 150° arm elevation). The results indicate that the present method can be used under careful considerations for 3D kinematical studies examining different shoulder movements.

Some special sub-systems for stratospheric balloon flights in India

NASA Astrophysics Data System (ADS)

Damle, S. V.; Gokhale, G. S.; Kundapurkar, R. U.

During last few years several new sub-systems for balloon were developed and are being regularly used in the balloon flights. Some of these sub-systems are i) positive monitor for magnetic ballast release using an opto-electronic device ii) one-way pressure switch to terminate flight for runaway balloon iii) in-flight payload reel down system for atmospheric science experiment. The design, usage and performance of these and other sub-systems will be presented.

PECASE: Multi-Spectral Photon Detection in Polymer/Nanoparticle Composites-Toward IR Photodectors and Solar Cells Applicable to Unmanned Vehicles

DTIC Science & Technology

2016-03-31

in Polymer/Nanoparticle Composites-Toward IR Photodectors and Solar Cells Applicable to Sb. GRANT NUMBER Unmanned Vehicles N00014-1 0-1-0481 Sc...photodetectors and solar cells deposited by RIR-MAPLE, and developing a simulation tool for optoelectronic device performance that accounts for RIR...MAPLE film properties. 1S. SUBJECT TERMS Hybrid nanocomposites, MAPLE, RIR-MAPLE, intraband absorption, mid-IR photodetectors, organic solar cells

Highly crystalline films of PCPDTBT with branched side chains by solvent vapor crystallization: influence on opto-electronic properties.

PubMed

Fischer, Florian S U; Trefz, Daniel; Back, Justus; Kayunkid, Navaphun; Tornow, Benjamin; Albrecht, Steve; Yager, Kevin G; Singh, Gurpreet; Karim, Alamgir; Neher, Dieter; Brinkmann, Martin; Ludwigs, Sabine

2015-02-18

PCPDTBT, a marginally crystallizable polymer, is crystallized into a new crystal structure using solvent-vapor annealing. Highly ordered areas with three different polymer-chain orientations are identified using TEM/ED, GIWAXS, and polarized Raman spectroscopy. The optical and structural properties differ significantly from films prepared by standard device preparation protocols. Bilayer solar cells, however, show similar performance. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible and stretchable electronics for biointegrated devices.

PubMed

Kim, Dae-Hyeong; Ghaffari, Roozbeh; Lu, Nanshu; Rogers, John A

2012-01-01

Advances in materials, mechanics, and manufacturing now allow construction of high-quality electronics and optoelectronics in forms that can readily integrate with the soft, curvilinear, and time-dynamic surfaces of the human body. The resulting capabilities create new opportunities for studying disease states, improving surgical procedures, monitoring health/wellness, establishing human-machine interfaces, and performing other functions. This review summarizes these technologies and illustrates their use in forms integrated with the brain, the heart, and the skin.

Silicon-based silicon–germanium–tin heterostructure photonics

PubMed Central

Soref, Richard

2014-01-01

The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479

PREFACE: Preface

NASA Astrophysics Data System (ADS)

Ye, Chaohui; Wang, Zhong Lin; Zhou, Bingkun

2011-02-01

The 3rd International Photonics and OptoElectronics Meeting (POEM 2010) was held from November 2-5, 2011, in Wuhan, China. POEM takes place annually, usually in November, with the aim of focusing on the key techniques of scientific frontiers and industry in the field of optoelectronics, understanding future trends as well as making the most of the industrial advantages of Wuhan - Optics Valley of China (OVC). POEM 2010 presented a plenary session and six parallel sessions. The latter comprised Laser Technology and Applications; Nano-enabled Energy Technologies and Materials; Optoelectronic Devices and Integration; Optoelectronic Sensing and Imaging; Solar Cells, Solid State Lighting and Information Display Technologies; and Tera-Hertz Science and Technology. 700 delegates from the field of optoelectronics - including world-famous experts, researchers, investors and entrepreneurs from more than 20 countries - attended the conference, among whom were 160 invited speakers. POEM 2010 once again received extensive praise for its intricate planning, rich contents, and the high-level and influential invited speakers which it attracted. Participants remarked that the presentations by the invited experts, the 'hot topic' discussions, students' posters, and the awards for papers were very engaging. They appreciated this valuable and beneficial opportunity for exchanging ideas with top photonics and optoelectronics experts. Our thanks are extended to the Conference Secretariat and Local Organizing Committee, who have been completely dedicated to their work, and who made the conference such a great success. We are also grateful for the financial support from 111 Project (B07038), and for the help with organization and coordination from Wuhan National Laboratory for Optoelectronics and Huazhong University of Science and Technology. Proceedings of POEM 2010234 papers were selected out of the 343 manuscripts submitted. The organizers of POEM 2010 are grateful to all the authors whose papers are being published in this volume of the Journal of Physics: Conference Series. The proceedings are divided into six sections according to different technical areas: Laser Technology and Applications (LTA) Nano-enabled Energy Technologies and Materials (NETM) Optoelectronic Devices and Integration (OEDI) Optoelectronic Sensing and Imaging (OSI) Solar Cells, Solid State Lighting and Information Display Technologies (SSID) Tera-Hertz Science and Technology (THST) Wuhan, PR ChinaDecember, 2010 Chaohui YeZhong Lin WangBingkun ZhouConference Chairs The 3rd International Photonics and OptoElectronics Meeting (POEM 2010)November 2-5, 2010Wuhan, China Supporters:Ministry of Education of China (MOE)State Administration of Foreign Experts Affairs (SAFEA)National Natural Science Foundation of China (NSFC) Sponsors:Huazhong University of Science and Technology (HUST)China Hubei Provincial Science Technology Department (HBSTD)Wuhan East Lake National Innovation Model Park Co-operating Societies:Institute of Physics (IOP)American Institute of Physics (AIP)International Biomedical Optics Society (IBOS)Laser Institute of America (LIA)Optical Society of America (OSA)IEEE Photonics Society (Singapore and Hongkong Chapters)Chinese Optical Society (COS) Organizer:Wuhan National Laboratory for Optoelectronics (WNLO) 1. LASER TECHNOLOGY AND APPLICATIONS (LTA)Editors:Peixiang Lu, Wuhan National Laboratory for Optoelectronics (China)Katsumi Midorikawa, Extreme Photonics Research Group, RIKEN (Japan)Bernd Wilhelmi, Jenoptik AG, Jena (Germany) 2. NANO-ENABLED ENERGY TECHNOLOGIES AND MATERIALS (NETM)Editors:Zhong Lin Wang, Wuhan National Laboratory for Optoelectronics (China) and Georgia Institute of Technology (USA)Guozhen Shen, Wuhan National Laboratory for Optoelectronics (China) 3. OPTOELECTRONIC DEVICES AND INTEGRATION (OEDI)Editors:Chinlon Lin, Bell Laboratory (USA)Jesper Moerk, Technical University of Denmark (Denmark)Xun Li, McMaster University (Canada)Xinliang Zhang, Wuhan National Laboratory for Optoelectronics (China)Junqiang Sun, Wuhan National Laboratory for Optoelectronics (China) 4. OPTOELECTRONIC SENSING AND IMAGING (OSI)Editors:Kecheng Yang, Wuhan National Laboratory for Optoelectronics (China)Pengcheng Li, Wuhan National Laboratory for Optoelectronics (China) 5. SOLAR CELLS, SOLID-STATE LIGHTING AND INFORMATION DISPLAY TECHNOLOGIES (SSID)Editors:Hiroshi Amano, Meijo University (Japan)Yibing Cheng, Monash University (Australia)Jinzhong Yu, Institute of Semiconductor, CAS (China)Changqing Chen, Wuhan National Laboratory for Optoelectronics (China)Hongwei Han, Wuhan National Laboratory for Optoelectronics (China)Guoli Tu, Wuhan National Laboratory for Optoelectronics (China) 6. TERA-HERTZ SCIENCE AND TECHNOLOGY (THST)Editors:Jianquan Yao, Tianjin University (China)Shenggang Liu, University of Electronic Science and Technology of China (China)X C Zhang, Rensselaer Polytechnic Institute (USA)Jinsong Liu, Wuhan National Laboratory for Optoelectronics (China) International Advisory Committee:Yibing Cheng, Monash University (Australia)Stephen Z D Cheng, University of Akron (USA)Min Gu, Swinburne University of Technology (Australia)Andrew B Holmes, the University of Melbourne (Australia)Chinlon Lin, Bell Laboratory (retired, USA)Xun Li, McMaster University (Canada)Shenggang Liu, University of Electronic Science and Technology of China (China)Jesper Moerk, Technical University of Denmark (Denmark)Dennis L Matthews, University of California, Davis (USA)Jiacong Shen, Jilin University (China)Ping Shum, Nanyang Technological University (Singapore)Chester C T Shu, Chinese University of Hong Kong (China)Valery V Tuchin, Saratov State University (Russia)Bruce Tromberg, University of California/Irvine (USA)Peiheng Wu, University of Nanjing (China)Alan Willner, University of Southern California (USA)Lihong Wang, Washington University in St. Louis (USA)C P Wong, Georgia Institute of Technology (USA)Jianquan Yao, Tianjin University (China)Xi Zhang, Tsinghua University (China)X C Zhang, Rensselaer Polytechnic Institute (USA) Program Committee:Qingming Luo, Wuhan National Laboratory for Optoelectronics (China) - ChairHiroshi Amano, Meijo University (Japan)Yibing Cheng, Monash University (Australia)Peixiang Lu, Wuhan National Laboratory for Optoelectronics (China)Ruxin Li, Shanghai Institute of Optics and Fine Mechanics (China)Chinlon Lin, Bell Laboratory (USA)Xun Li, McMaster University (Canada)Shenggang Liu, University of Electronic Science and Technology of China (China)Katsumi Midorikawa, Extreme Photonics Research Group, RIKEN (Japan)Jesper Moerk, Technical University of Denmark (Denmark)Valery V Tuchin, Saratov State University (Russia)Lihong Wang, Washington University in St. Louis (USA)Zhong Lin Wang, Georgia Institute of Technology(USA)Jinzhong Yu, Institute of Semiconductor, CAS (China)Jianquan Yao, Tianjin University (China)X C Zhang, Rensselaer Polytechnic Institute (USA) Local Organizing committee:Lin Lin, Wuhan National Laboratory for Optoelectronics (China) - ChairSheng Lu, Administration Committee of Wuhan East Lake Hi-tech Development Zone (China) - ChairChangqing Chen, Wuhan National Laboratory for Optoelectronics (China)Ling Fu, Wuhan National Laboratory for Optoelectronics (China)Hongwei Han, Wuhan National Laboratory for Optoelectronics (China)Peixiang Lu, Wuhan National Laboratory for Optoelectronics (China)Pengcheng Li, Wuhan National Laboratory for Optoelectronics (China)Jinsong Liu, Wuhan National Laboratory for Optoelectronics (China)Junqiang Sun, Wuhan National Laboratory for Optoelectronics (China)Guozhen Shen, Wuhan National Laboratory for Optoelectronics (China)Guoli Tu, Wuhan National Laboratory for Optoelectronics (China)Kecheng Yang, Wuhan National Laboratory for Optoelectronics (China)Xinliang Zhang, Wuhan National Laboratory for Optoelectronics (China)Yuandi Zhao, Wuhan National Laboratory for Optoelectronics (China) Local Secretariat:Xiaochun Xiao, Huazhong University of Science and Technology (China)Weiwei Dong, Huazhong University of Science and Technology (China)

Controlled formation of GeSi nanostructures on pillar-patterned Si substrate

NASA Astrophysics Data System (ADS)

Zhou, Tong; Zeng, Ceng; Fan, Yongliang; Jiang, Zuimin; Xia, Jinsong; Zhong, Zhenyang; Fudan University Team; Huazhong University of Science; Technology Collaboration

2015-03-01

GeSi quantum nanostructures (QNs) have potential applications in optoelectronic devices due to their unique properties and compatibility with the sophisticated Si technology. However, the disadvantages of poor quantum efficiency of the GeSi QNs on flat Si (001) substrates hinder their optoelectronic applications. Today, numerous growth strategies have been proposed to control the formation of GeSi QNs in hope of improving the optoelectronic performances. One of the ways is to fabricate GeSi QNs on patterned substrates, where the GeSi QNs can be greatly manipulated in aspects of size, shape, composition, orientation and arrangement. Here, self-assembled GeSi QNs on periodic Si (001) sub-micro pillars (SPMs) are systematically studied. By controlling the growth conditions and the diameters of the SPMs, different GeSi QNs, including circularly arranged quantum dots (QDs), quantum rings (QRs), and quantum dot molecules (QDMs), are realized at the top edge of SMPs. Meanwhile, fourfold symmetric GeSi QDMs can be also obtained at the base edges of the SPMs. The promising features of self-assembled GeSi QNs are explained in terms of the surface chemical potential, which disclose the critical effect of surface morphology on the diffusion and the aggregation of Ge adatoms.

Full 3D opto-electronic simulation tool for nanotextured solar cells (Conference Presentation)

NASA Astrophysics Data System (ADS)

Michallon, Jérôme; Collin, Stéphane

2017-04-01

Increasing efforts on the photovoltaics research have recently been devoted to material savings, leading to the emergence of new designs based on nanotextured and nanowire-based solar cells. The use of small absorber volumes, light-trapping nanostructures and unconventional carrier collection schemes (radial nanowire junctions, point contacts in planar structures,…) increases the impact of surfaces recombination and induces homogeneity in the photogenerated carrier concentrations. The investigation of their impacts on the device performances need to be addressed using full 3D coupled opto-electrical modeling. In this context, we have developed a new tool for full 3D opto-electrical simulation using the most advanced optical and electrical simulation techniques. We will present an overview of its simulation capabilities and the key issues that have been solved to make it fully operational and reliable. We will provide various examples of opto-electronic simulation of (i) nanostructured solar cells with localized contacts and (ii) nanowire solar cells. We will also show how opto-electronic simulation can be used to simulate light- and electron-beam induced current (LBIC/EBIC) experiments, targeting quantitative analysis of the passivation properties of surfaces.

Optoelectronic response of a WS2 tubular p-n junction

NASA Astrophysics Data System (ADS)

Zhang, Y. J.; Onga, M.; Qin, F.; Shi, W.; Zak, A.; Tenne, R.; Smet, J.; Iwasa, Y.

2018-07-01

Due to their favourable and rich electronic and optical properties, group-VI-B transition-metal dichalcogenides (TMDs) have attracted considerable interest. They have earned their position in the materials portfolio of the spintronics and valleytronics communities. The electrical performance of TMDs is enhanced by rolling up the two-dimensional (2D) sheets to form quasi-one-dimensional (1D) tubular structures. The fabrication of p-n junctions out of these tubular TMDs would boost their potential for optoelectronic devices as such junctions represent a fundamental building block. Here, we report the realization of a p-n junction out of a single, isolated WS2-nanotube (WS2-NT). Light-emitting diode operation and photovoltaic behaviour were observed based on such p-n junctions. The emitted light as well as the photovoltaic effect exhibit strong linear polarization characteristics due to the quasi-1D nature. The external quantum efficiency for the photovoltaic effect reaches a value as high as 4.8%, exceeding by far that of 2D TMDs and even approaching the internal quantum efficiency of the 2D TMDs. This efficiency improvement indicates that TMD nanotubes are superior candidates over 2D TMDs for optoelectronic applications.

Integrated optoelectronic oscillator.

PubMed

Tang, Jian; Hao, Tengfei; Li, Wei; Domenech, David; Baños, Rocio; Muñoz, Pascual; Zhu, Ninghua; Capmany, José; Li, Ming

2018-04-30

With the rapid development of the modern communication systems, radar and wireless services, microwave signal with high-frequency, high-spectral-purity and frequency tunability as well as microwave generator with light weight, compact size, power-efficient and low cost are increasingly demanded. Integrated microwave photonics (IMWP) is regarded as a prospective way to meet these demands by hybridizing the microwave circuits and the photonics circuits on chip. In this article, we propose and experimentally demonstrate an integrated optoelectronic oscillator (IOEO). All of the devices needed in the optoelectronic oscillation loop circuit are monolithically integrated on chip within size of 5×6cm 2 . By tuning the injection current to 44 mA, the output frequency of the proposed IOEO is located at 7.30 GHz with phase noise value of -91 dBc/Hz@1MHz. When the injection current is increased to 65 mA, the output frequency can be changed to 8.87 GHz with phase noise value of -92 dBc/Hz@1MHz. Both of the oscillation frequency can be slightly tuned within 20 MHz around the center oscillation frequency by tuning the injection current. The method about improving the performance of IOEO is carefully discussed at the end of in this article.

Flexible opto-electronics enabled microfluidics systems with cloud connectivity for point-of-care micronutrient analysis.

PubMed

Lee, Stephen; Aranyosi, A J; Wong, Michelle D; Hong, Ji Hyung; Lowe, Jared; Chan, Carol; Garlock, David; Shaw, Scott; Beattie, Patrick D; Kratochvil, Zachary; Kubasti, Nick; Seagers, Kirsten; Ghaffari, Roozbeh; Swanson, Christina D

2016-04-15

In developing countries, the deployment of medical diagnostic technologies remains a challenge because of infrastructural limitations (e.g. refrigeration, electricity), and paucity of health professionals, distribution centers and transportation systems. Here we demonstrate the technical development and clinical testing of a novel electronics enabled microfluidic paper-based analytical device (EE-μPAD) for quantitative measurement of micronutrient concentrations in decentralized, resource-limited settings. The system performs immune-detection using paper-based microfluidics, instrumented with flexible electronics and optoelectronic sensors in a mechanically robust, ultrathin format comparable in size to a credit card. Autonomous self-calibration, plasma separation, flow monitoring, timing and data storage enable multiple devices to be run simultaneously. Measurements are wirelessly transferred to a mobile phone application that geo-tags the data and transmits it to a remote server for real time tracking of micronutrient deficiencies. Clinical tests of micronutrient levels from whole blood samples (n=95) show comparable sensitivity and specificity to ELISA-based tests. These results demonstrate instantaneous acquisition and global aggregation of diagnostics data using a fully integrated point of care system that will enable rapid and distributed surveillance of disease prevalence and geographical progression. Copyright © 2015 Elsevier B.V. All rights reserved.

Experimental investigation of the contact resistance of Graphene/MoS2 interface treated with O2 plasma

NASA Astrophysics Data System (ADS)

Lu, Qin; Liu, Yan; Han, Genquan; Fang, Cizhe; Shao, Yao; Zhang, Jincheng; Hao, Yue

2018-02-01

High contact resistance has been a major bottleneck for MoS2 to achieve high performances among two-dimensional material based optoelectronic and electronic devices. In this study, we investigate the contact resistances of different layered graphene film with MoS2 film with Ti/Au electrodes under different O2 plasma treatment time using the circular transmission line model (CTLM). Annealing process followed O2 plasma process to reduce the oxygen element introduced. Raman and X-ray photoelectric spectroscopy were used to analyze the quality of the materials. Finally, the current and voltage curve indicates good linear characteristics. Under the optimized condition of the O2 plasma treatment, a relatively low contact resistance (∼35.7 Ohm mm) without back gate voltage in single-layer graphene/MoS2 structure at room temperature was achieved compared with the existing reports. This method of introducing graphene as electrodes for MoS2 film demonstrates a remarkable ability to improve the contact resistance, without additional channel doping for two-dimensional materials based devices, which paves the way for MoS2 to be a more promising channel material in optoelectronic and electronic integration.

Novel transparent high-performance AgNWs/ZnO electrodes prepared on unconventional substrates with 3D structured surfaces

NASA Astrophysics Data System (ADS)

Lan, Wei; Yang, Zhiwei; Zhang, Yue; Wei, Yupeng; Wang, Pengxiang; Abas, Asim; Tang, Guomei; Zhang, Xuetao; Wang, Junya; Xie, Erqing

2018-03-01

With the development of optoelectronic devices with three-dimensional (3D) structured surfaces, transparent electrodes that can be deposited on non-plane substrates have become increasingly important. In this paper, novel transparent silver nanowire (AgNWs)/ZnO film electrodes were uniformly prepared on treated 3D glass and PET substrates with a combination of spin-coating and heat-welding. The AgNWs/ZnO films show a transmittance of ∼88% and a sheet resistance of ∼10 Ω/sq. They are comparable with commercial ITO films. Furthermore, only a small in-plane resistance variation of ∼1 Ω/sq was measured using four-point probe mapping in films with a 10 cm × 10 cm area. These results confirm that these novel film electrodes are very uniform. Both electrical resistance and optical transmittance of the films remain mostly intact after 1000 bending cycles and tape peeling-tests with 10 cycles. The films show high thermal stability for more than one month at 80 °C. The strategy provides a new route for the design and fabrication of optoelectronic devices with 3D structured surfaces.

Battery-free, stretchable optoelectronic systems for wireless optical characterization of the skin.

PubMed

Kim, Jeonghyun; Salvatore, Giovanni A; Araki, Hitoshi; Chiarelli, Antonio M; Xie, Zhaoqian; Banks, Anthony; Sheng, Xing; Liu, Yuhao; Lee, Jung Woo; Jang, Kyung-In; Heo, Seung Yun; Cho, Kyoungyeon; Luo, Hongying; Zimmerman, Benjamin; Kim, Joonhee; Yan, Lingqing; Feng, Xue; Xu, Sheng; Fabiani, Monica; Gratton, Gabriele; Huang, Yonggang; Paik, Ungyu; Rogers, John A

2016-08-01

Recent advances in materials, mechanics, and electronic device design are rapidly establishing the foundations for health monitoring technologies that have "skin-like" properties, with options in chronic (weeks) integration with the epidermis. The resulting capabilities in physiological sensing greatly exceed those possible with conventional hard electronic systems, such as those found in wrist-mounted wearables, because of the intimate skin interface. However, most examples of such emerging classes of devices require batteries and/or hard-wired connections to enable operation. The work reported here introduces active optoelectronic systems that function without batteries and in an entirely wireless mode, with examples in thin, stretchable platforms designed for multiwavelength optical characterization of the skin. Magnetic inductive coupling and near-field communication (NFC) schemes deliver power to multicolored light-emitting diodes and extract digital data from integrated photodetectors in ways that are compatible with standard NFC-enabled platforms, such as smartphones and tablet computers. Examples in the monitoring of heart rate and temporal dynamics of arterial blood flow, in quantifying tissue oxygenation and ultraviolet dosimetry, and in performing four-color spectroscopic evaluation of the skin demonstrate the versatility of these concepts. The results have potential relevance in both hospital care and at-home diagnostics.

Fiber Optic Microswitch For Industrial Use

NASA Astrophysics Data System (ADS)

Desforges, F. X.; Jeunhomme, L. B.; Graindorge, Ph.; LeBoudec, G.

1988-03-01

Process control instrumentation is a large potential market for fiber optic sensors and particulary for fiber optic microswitches. Use of such devices brings a lot of advantages such as lighter cables, E.M. immunity, intrinsic security due to optical measurement, no grounding problems and so on. However, commercially available fiber optic microswitches exhibit high insertion losses as well as non optimal mechanical design. In fact, these drawbacks are due to operation principles which are based on a mobile shutter displaced between two fibers. The fiber optic microswitch we present here, has been specially designed for harsh environments (oil industry). The patented operation principle uses only one fiber placed in front of a retroreflecting material by the mean of a fiber optic connector. The use of this retroreflector material allows an important reduction of the position tolerances required in two fibers devices, as well as easier fabrication and potential mass production of the optical microswitch. Moreover, such a configuration yields good performances in term of reflection coefficient leading to large dynamic range and consequently large distances (up to 250 m) between the optical microswitch and its optoelectronic instrument. Optomechanical design of the microswitch as well as electronic design of the optoelectronic instrument will be examined and discussed.

Boosting Photon Harvesting in Organic Solar Cells with Highly Oriented Molecular Crystals via Graphene-Organic Heterointerface.

PubMed

Jo, Sae Byeok; Kim, Hyun Ho; Lee, Hansol; Kang, Boseok; Lee, Seongkyu; Sim, Myungsun; Kim, Min; Lee, Wi Hyoung; Cho, Kilwon

2015-08-25

Photon harvesting in organic solar cells is highly dependent on the anisotropic nature of the optoelectronic properties of photoactive materials. Here, we demonstrate an efficient approach to dramatically enhance photon harvesting in planar heterojunction solar cells by using a graphene-organic heterointerface. A large area, residue-free monolayer graphene is inserted at anode interface to serve as an atomically thin epitaxial template for growing highly orientated pentacene crystals with lying-down orientation. This anisotropic orientation enhances the overall optoelectronic properties, including light absorption, charge carrier lifetime, interfacial energetics, and especially the exciton diffusion length. Spectroscopic and crystallographic analysis reveal that the lying-down orientation persists until a thickness of 110 nm, which, along with increased exciton diffusion length up to nearly 100 nm, allows the device optimum thickness to be doubled to yield significantly enhanced light absorption within the photoactive layers. The resultant photovoltaic performance shows simultaneous increment in Voc, Jsc, and FF, and consequently a 5 times increment in the maximum power conversion efficiency than the equivalent devices without a graphene layer. The present findings indicate that controlling organic-graphene heterointerface could provide a design strategy of organic solar cell architecture for boosting photon harvesting.

Recent Total Ionizing Dose Results and Displacement Damage Results for Candidate Spacecraft Electronics for NASA

NASA Technical Reports Server (NTRS)

Cochran, Donna J.; Buchner, Stephen P.; Irwin, Tim L.; LaBel, Kenneth A.; Marshall, Cheryl J.; Reed, Robert A.; Sanders, Anthony B.; Hawkins, Donald K.; Flanigan, Ryan J.; Cox, Stephen R.

2005-01-01

We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to- Digital Converters (ADCs), and Digital-to-Analog Converters (DACs), among others. T

Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

PubMed

Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

2015-01-14

The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

Surface engineered two-dimensional and quasi-one-dimensional nanomaterials for electronic and optoelectronic devices

NASA Astrophysics Data System (ADS)

Du, Xiang

As the sizes of individual components in electronic and optoelectronic devices approach nano scale, the performance of the devices is often determined by surface properties due to their large surface-to-volume ratio. Surface phenomena have become one of the cornerstones in nanoelectronic industry. For this reason, research on the surface functionalization has been tremendous amount of growth over the past decades, and promises to be an increasingly important field in the future. Surface functionalization, as an effective technique to modify the surface properties of a material through a physical or chemical approach, exhibits great potential to solve the problems and challenges, and modulate the performance of nanomaterials based functional devices. Surface functionalization drives the developments and applications of modern electronic and optoelectronic devices fabricated by nanomaterials. In this thesis, I demonstrate two surface functionalization approaches, namely, surface transfer doping and H2 annealing, to effectively solve the problems and significantly enhance the performance of 2D (single structure black phosphorus (BP) and heterostructure graphene/Si Schottky junction), and quasi-1D (molybdenum trioxide (MoO 3) nanobelt) nanomaterials based functional devices, respectively. In situ photoelectron spectroscopy (PES) measurements were also carried out to explore the interfacial charge transfer occurring at the interface between the nanostructures and doping layers, and the gap states in MoO 3 thin films, which provides the underlying mechanism to understand and support our device measurement results. In the first part of this thesis, I will discuss the first surface functionalization approach, namely, surface transfer doping, to effectively modulate the ambipolar characteristics of 2D few-layer BP flakes based FETs. The ambipolar characteristics of BP transistors were effectively modulated through in situ surface functionalization with cesium carbonate (Cs2CO3) and MoO3, respectively. Cs2CO3 was found to strongly electron dope black phosphorus. The electron mobility of black phosphorus was significantly enhanced to ˜27 cm2V-1s-1 after 10 nm Cs2CO3 modification, indicating a greatly improved electron transport behavior. In contrast, MoO3 decoration demonstrated a giant hole doping effect. In situ PES characterization confirms the interfacial charge transfer between black phosphorus and doping layers. This doping can also modulate the Schottky junctions formed between metal contacts and black phosphorus flakes, and hence to enhance the responsivity of black phosphorus based photodetectors. These findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics. Following the same surface transfer doping technique, I will demonstrate a remarkable performance enhancement of graphene/Si Schottky junction based self-powered photodetectors via surface modification with MoO3 thin film. It was found that the photocurrent responsivity of MoO3 doped graphene/Si photodetectors was highly increased under a wide spectrum of illuminated light from ultraviolet to near infrared. The current on-off ratio reached up to ˜104 under illumination of 500 nm light with intensity of ˜62 muWcm-2. More importantly, the external quantum efficiency of graphene/Si devices was significantly enhanced up to ˜80% by almost four times in the visible light region after MoO3 functionalization. The largely improved photodetecting performance originates from the increased Schottky barrier height at the graphene/Si interface as well as the reduced series resistance after MoO3 modification, which was further corroborated by the in situ PES and electrical transport characterizations. These observations promise a simple method to effectively modify the graphene/Si Schottky junction based self-powered photodetectors and thus significantly enhance their photodetecting performance. After discussion of the first surface functionalization method, next I will introduce the second approach which is H2 annealing, to greatly extend the photoresponse range of single MoO3 nanobelt based photodetector from UV to visible light by introducing substantial gap states. After annealing, the conductance of MoO3 nanobelt was largely enhanced; at the same time, the photodetector possessed wide visible spectrum response. As corroborated by in situ PES investigations, such strong wide spectrum photoresponse arises from the largely enriched oxygen vacancies and gap states in MoO3 nanobelt after H2 annealing. These results open up a new avenue to extend the wide bandgap metal oxide nanomaterials based optoelectronics devices with efficient visible light response through surface modification, i.e. the introduction of the high density of carefully engineered gap states.

Towards a Graphene-Based Low Intensity Photon Counting Photodetector

PubMed Central

Williams, Jamie O. D.; Alexander-Webber, Jack A.; Lapington, Jon S.; Roy, Mervyn; Hutchinson, Ian B.; Sagade, Abhay A.; Martin, Marie-Blandine; Braeuninger-Weimer, Philipp; Cabrero-Vilatela, Andrea; Wang, Ruizhi; De Luca, Andrea; Udrea, Florin; Hofmann, Stephan

2016-01-01

Graphene is a highly promising material in the development of new photodetector technologies, in particular due its tunable optoelectronic properties, high mobilities and fast relaxation times coupled to its atomic thinness and other unique electrical, thermal and mechanical properties. Optoelectronic applications and graphene-based photodetector technology are still in their infancy, but with a range of device integration and manufacturing approaches emerging this field is progressing quickly. In this review we explore the potential of graphene in the context of existing single photon counting technologies by comparing their performance to simulations of graphene-based single photon counting and low photon intensity photodetection technologies operating in the visible, terahertz and X-ray energy regimes. We highlight the theoretical predictions and current graphene manufacturing processes for these detectors. We show initial experimental implementations and discuss the key challenges and next steps in the development of these technologies. PMID:27563903

Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits.

PubMed

Lu, Yegang; Stegmaier, Matthias; Nukala, Pavan; Giambra, Marco A; Ferrari, Simone; Busacca, Alessandro; Pernice, Wolfram H P; Agarwal, Ritesh

2017-01-11

Phase change materials (PCMs) are highly attractive for nonvolatile electrical and all-optical memory applications because of unique features such as ultrafast and reversible phase transitions, long-term endurance, and high scalability to nanoscale dimensions. Understanding their transient characteristics upon phase transition in both the electrical and the optical domains is essential for using PCMs in future multifunctional optoelectronic circuits. Here, we use a PCM nanowire embedded into a nanophotonic circuit to study switching dynamics in mixed-mode operation. Evanescent coupling between light traveling along waveguides and a phase-change nanowire enables reversible phase transition between amorphous and crystalline states. We perform time-resolved measurements of the transient change in both the optical transmission and resistance of the nanowire and show reversible switching operations in both the optical and the electrical domains. Our results pave the way toward on-chip multifunctional optoelectronic integrated devices, waveguide integrated memories, and hybrid processing applications.

DOC II 32-bit digital optical computer: optoelectronic hardware and software

NASA Astrophysics Data System (ADS)

Stone, Richard V.; Zeise, Frederick F.; Guilfoyle, Peter S.

1991-12-01

This paper describes current electronic hardware subsystems and software code which support OptiComp's 32-bit general purpose digital optical computer (DOC II). The reader is referred to earlier papers presented in this section for a thorough discussion of theory and application regarding DOC II. The primary optoelectronic subsystems include the drive electronics for the multichannel acousto-optic modulators, the avalanche photodiode amplifier, as well as threshold circuitry, and the memory subsystems. This device utilizes a single optical Boolean vector matrix multiplier and its VME based host controller interface in performing various higher level primitives. OptiComp Corporation wishes to acknowledge the financial support of the Office of Naval Research, the National Aeronautics and Space Administration, the Rome Air Development Center, and the Strategic Defense Initiative Office for the funding of this program under contracts N00014-87-C-0077, N00014-89-C-0266 and N00014-89-C- 0225.

Mechanism for rapid growth of organic–inorganic halide perovskite crystals

PubMed Central

Nayak, Pabitra K.; Moore, David T.; Wenger, Bernard; Nayak, Simantini; Haghighirad, Amir A.; Fineberg, Adam; Noel, Nakita K.; Reid, Obadiah G.; Rumbles, Garry; Kukura, Philipp; Vincent, Kylie A.; Snaith, Henry J.

2016-01-01

Optoelectronic devices based on hybrid halide perovskites have shown remarkable progress to high performance. However, despite their apparent success, there remain many open questions about their intrinsic properties. Single crystals are often seen as the ideal platform for understanding the limits of crystalline materials, and recent reports of rapid, high-temperature crystallization of single crystals should enable a variety of studies. Here we explore the mechanism of this crystallization and find that it is due to reversible changes in the solution where breaking up of colloids, and a change in the solvent strength, leads to supersaturation and subsequent crystallization. We use this knowledge to demonstrate a broader range of processing parameters and show that these can lead to improved crystal quality. Our findings are therefore of central importance to enable the continued advancement of perovskite optoelectronics and to the improved reproducibility through a better understanding of factors influencing and controlling crystallization. PMID:27830749

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

PubMed

Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

2015-07-28

Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

Laser deposition of resonant silicon nanoparticles on perovskite for photoluminescence enhancement

NASA Astrophysics Data System (ADS)

Tiguntseva, E. Y.; Zalogina, A. S.; Milichko, V. A.; Zuev, D. A.; Omelyanovich, M. M.; Ishteev, A.; Cerdan Pasaran, A.; Haroldson, R.; Makarov, S. V.; Zakhidov, A. A.

2017-11-01

Hybrid lead halide perovskite based optoelectronics is a promising area of modern technologies yielding excellent characteristics of light emitting diodes and lasers as well as high efficiencies of photovoltaic devices. However, the efficiency of perovskite based devices hold a potential of further improvement. Here we demonstrate high photoluminescence efficiency of perovskites thin films via deposition of resonant silicon nanoparticles on their surface. The deposited nanoparticles have a number of advances over their plasmonic counterparts, which were applied in previous studies. We show experimentally the increase of photoluminescence of perovskite film with the silicon nanoparticles by 150 % as compared to the film without the nanoparticles. The results are supported by numerical calculations. Our results pave the way to high throughput implementation of low loss resonant nanoparticles in order to create highly effective perovskite based optoelectronic devices.

Optoelectronic date acquisition system based on FPGA

NASA Astrophysics Data System (ADS)

Li, Xin; Liu, Chunyang; Song, De; Tong, Zhiguo; Liu, Xiangqing

2015-11-01

An optoelectronic date acquisition system is designed based on FPGA. FPGA chip that is EP1C3T144C8 of Cyclone devices from Altera corporation is used as the centre of logic control, XTP2046 chip is used as A/D converter, host computer that communicates with the date acquisition system through RS-232 serial communication interface are used as display device and photo resistance is used as photo sensor. We use Verilog HDL to write logic control code about FPGA. It is proved that timing sequence is correct through the simulation of ModelSim. Test results indicate that this system meets the design requirement, has fast response and stable operation by actual hardware circuit test.

Pump-probe spectroscopy in organic semiconductors: monitoring fundamental processes of relevance in optoelectronics.

PubMed

Cabanillas-Gonzalez, Juan; Grancini, Giulia; Lanzani, Guglielmo

2011-12-08

In this review we highlight the contribution of pump-probe spectroscopy to understand elementary processes taking place in organic based optoelectronic devices. The techniques described in this article span from conventional pump-probe spectroscopy to electromodulated pump-probe and the state-of-the-art confocal pump-probe microscopy. The article is structured according to three fundamental processes (optical gain, charge photogeneration and charge transport) and the contribution of these techniques on them. The combination of these tools opens up new perspectives for assessing the role of short-lived excited states on processes lying underneath organic device operation. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Technical Reports Server (NTRS)

Pavlidis, Dimitris

1991-01-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Astrophysics Data System (ADS)

Pavlidis, Dimitris

1991-02-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

A novel electroluminescent PPV copolymer and silsesquioxane nanocomposite film for the preparation of efficient PLED devices.

PubMed

Venegoni, Ivan; Carniato, Fabio; Olivero, Francesco; Bisio, Chiara; Pira, Nello Li; Lambertini, Vito Guido; Marchese, Leonardo

2012-11-02

Polymer light-emitting diodes (PLEDs) have attracted growing interest in recent years for their potential use in displays and lighting fields. Nevertheless, PLED devices have some disadvantages in terms of low optoelectronic efficiency, high cost, short lifetimes and low thermal stability, which limit their final applications. Huge efforts have been made recently to improve the performances of these devices. The addition of inorganic or hybrid organic-inorganic nanoparticles to the light-emitting polymers, for example, allows their thermal stability and electroluminescent efficiency to be increased. Following this approach, novel PLED devices based on composite films of PPV-derivative copolymer (commercial name Super Yellow, SY) and octaisobutil POSS, were developed in this study. The device containing Super Yellow loaded with 1 wt% of POSS showed higher efficiency (ca. +30%) and improved lifetime in comparison to PLED prepared with the pure electroluminescent polymer. The PLED devices developed in this study are suitable candidates for automotive dashboards and, in general, for lighting applications.

A General Method for the Chemical Synthesis of Large-Scale, Seamless Transition Metal Dichalcogenide Electronics.

PubMed

Li, Li; Guo, Yichuan; Sun, Yuping; Yang, Long; Qin, Liang; Guan, Shouliang; Wang, Jinfen; Qiu, Xiaohui; Li, Hongbian; Shang, Yuanyuan; Fang, Ying

2018-03-01

The capability to directly build atomically thin transition metal dichalcogenide (TMD) devices by chemical synthesis offers important opportunities to achieve large-scale electronics and optoelectronics with seamless interfaces. Here, a general approach for the chemical synthesis of a variety of TMD (e.g., MoS 2 , WS 2 , and MoSe 2 ) device arrays over large areas is reported. During chemical vapor deposition, semiconducting TMD channels and metallic TMD/carbon nanotube (CNT) hybrid electrodes are simultaneously formed on CNT-patterned substrate, and then coalesce into seamless devices. Chemically synthesized TMD devices exhibit attractive electrical and mechanical properties. It is demonstrated that chemically synthesized MoS 2 -MoS 2 /CNT devices have Ohmic contacts between MoS 2 /CNT hybrid electrodes and MoS 2 channels. In addition, MoS 2 -MoS 2 /CNT devices show greatly enhanced mechanical stability and photoresponsivity compared with conventional gold-contacted devices, which makes them suitable for flexible optoelectronics. Accordingly, a highly flexible pixel array based on chemically synthesized MoS 2 -MoS 2 /CNT photodetectors is applied for image sensing. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Two Unipolar Terminal-Attractor-Based Associative Memories

NASA Technical Reports Server (NTRS)

Liu, Hua-Kuang; Wu, Chwan-Hwa

1995-01-01

Two unipolar mathematical models of electronic neural network functioning as terminal-attractor-based associative memory (TABAM) developed. Models comprise sets of equations describing interactions between time-varying inputs and outputs of neural-network memory, regarded as dynamical system. Simplifies design and operation of optoelectronic processor to implement TABAM performing associative recall of images. TABAM concept described in "Optoelectronic Terminal-Attractor-Based Associative Memory" (NPO-18790). Experimental optoelectronic apparatus that performed associative recall of binary images described in "Optoelectronic Inner-Product Neural Associative Memory" (NPO-18491).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jr., Jie Jerry; Sista, Srinivas Prasad; Shi, Xiaolei

Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and an electron transporting layer comprising inorganic nanoparticles dispersed in an organic matrix.

Nanoelectronics: Opportunities for future space applications

NASA Technical Reports Server (NTRS)

Frazier, Gary

1995-01-01

Further improvements in the performance of integrated electronics will eventually halt due to practical fundamental limits on our ability to downsize transistors and interconnect wiring. Avoiding these limits requires a revolutionary approach to switching device technology and computing architecture. Nanoelectronics, the technology of exploiting physics on the nanometer scale for computation and communication, attempts to avoid conventional limits by developing new approaches to switching, circuitry, and system integration. This presentation overviews the basic principles that operate on the nanometer scale that can be assembled into practical devices and circuits. Quantum resonant tunneling (RT) is used as the center-piece of the overview since RT devices already operate at high temperature (120 degrees C) and can be scaled, in principle, to a few nanometers in semiconductors. Near- and long-term applications of GaAs and silicon quantum devices are suggested for signal and information processing, memory, optoelectronics, and radio frequency (RF) communication.

Origin of photovoltage in perovskite solar cells probed by first-principles calculations

NASA Astrophysics Data System (ADS)

Echeverría-Arrondo, C.

2018-06-01

Hybrid halide perovskite solar cells hold great potential for photovoltaic applications, but suffer, however, from anomalous current density-voltage characteristics. With a view to further understanding the performance of these optoelectronic devices, we investigate a prototypical electron selective contact with density functional theory methods. Our computations on a TiO2/CH3NH3PbI3 heterojunction doped with Schottky defects at open circuit reveal a consistent picture of ions and interlayer excitons at the origin of photovoltage formation.

Electroabsorption Spectroscopy Measurements of the Exciton Binding Energy, ElectronHole Reduced Effective Mass, and Band Gap in the Perovskite CHsub3NHsub3PbIsub3

DTIC Science & Technology

2016-07-28

can essentially be described in terms of free carrier generation . KEYWORDS: solar cell, photovoltaic, Franz−Keldysh effect, Wannier exciton, Stark...optoelectronic devices such as lasers,1,2 LEDs,3 and solar cells,4−6 despite requiring only inexpensive and relatively crude processing conditions...compared to current high-performance crystalline semiconductors. The archetypal material, CH3NH3PbI3, has exhibited excellent power con- version

Electrical Performance of Monolayer MoS2 Field-Effect Transistors Prepared by Chemical Vapor Deposition

DTIC Science & Technology

2013-05-16

Furthermore, MoS2 also shows promise for use in logic circuits and optoelectronic devices, and it is a promising material for use on flexible and...onto an auxiliary silicon substrate and placed inside a tube furnace with the growth substrates surrounding it. Sulfur powder, placed upstream near the...opening of the furnace at an approximate temperature of 600 C, was subli- mated for use as the sulfur vapor source. The furnace was heated to a peak

Functionalization of Semiconductor Nanomaterials for Optoelectronic Devices And Components

DTIC Science & Technology

2015-03-04

conversion efficiency of InAs quantum dot solar cell by using a single layer anatase TiO2 anti-reflection coating,” R. Vasan, Y. F. Makableh, J. C...dx.doi.org/10.1557//opl.2013.742 9. “The Optimization of InP/ZnS Core/Shell Nanocrystals and TiO2 Nanotubes for Quantum Dot Sensitized Solar Cells ...Quantum Dots Solar Cells Performance,” J. C. Sarker, Y. F. Makableh, R. Vasan, S. Lee, M. O. Manasreh, and M. Benamara, IEEE J. Photovoltaic. (submitted

Electrochemical fabrication and optoelectronic properties of hybrid heterostructure of CuPc/porous GaN

NASA Astrophysics Data System (ADS)

Peng, Fei; Qin, Shuang-Jiao; Hu, Li-Feng; Wang, Juan-Ye; Yang, Jia-Mei; Chen, Xue-Qing; Pan, Ge-Bo

2016-05-01

A new hybrid heterostructure of p-type copper phthalocyanine (CuPc) and n-type porous GaN (PGaN) has been fabricated by electrophoretic deposition. The influence of CuPc concentration, electric field intensity, and deposition time on the growth of CuPc film has been explored. The as-prepared CuPc films are made of numerous nanorods. The X-ray diffraction (XRD) spectra revealed that the CuPc films are the β phase and amorphous type on pristine and porous GaN, respectively. Moreover, the prototype devices were fabricated on the basis of the CuPc/PGaN heterostructures. The devices exhibited excellent photodetector performance under ultraviolet (UV) light illumination.

Two-photon absorption in layered transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Dong, Ningning; Zhang, Saifeng; Li, Yuanxin; Wang, Jun

2018-02-01

Two-dimensional (2D) layered transition metal dichalcogenides (TMDCs) exhibit unique nonlinear optical (NLO) features and have becoming intriguing and promising candidate materials for photonic and optoelectronic devices with high performance and unique functions. Owing to layered geometry and the thickness-dependent bandgap, we studied the ultrafast NLO properties of a range of TMDCs. TMDCs with high-quality layered nanosheets were prepared through chemical vapor deposition (CVD) technique and vapor-phase growth method. Saturable absorption, two photon absorption (TPA) and two photon pumped frequency up-converted luminescence were observed from these 2D nanostructures. The exciting results open up the door to 2D photonic devices, such as passive mode-lockers, Q-switchers, optical limiters, light emitters, etc.

Coupling carbon nanomaterials with photochromic molecules for the generation of optically responsive materials

PubMed Central

Zhang, Xiaoyan; Hou, Lili; Samorì, Paolo

2016-01-01

Multifunctional carbon-based nanomaterials offer routes towards the realization of smart and high-performing (opto)electronic (nano)devices, sensors and logic gates. Meanwhile photochromic molecules exhibit reversible transformation between two forms, induced by the absorption of electromagnetic radiation. By combining carbon-based nanomaterials with photochromic molecules, one can achieve reversible changes in geometrical structure, electronic properties and nanoscale mechanics triggering by light. This thus enables a reversible modulation of numerous physical and chemical properties of the carbon-based nanomaterials towards the fabrication of cognitive devices. This review examines the state of the art with respect to these responsive materials, and seeks to identify future directions for investigation. PMID:27067387

Black phosphorus ink formulation for inkjet printing of optoelectronics and photonics.

PubMed

Hu, Guohua; Albrow-Owen, Tom; Jin, Xinxin; Ali, Ayaz; Hu, Yuwei; Howe, Richard C T; Shehzad, Khurram; Yang, Zongyin; Zhu, Xuekun; Woodward, Robert I; Wu, Tien-Chun; Jussila, Henri; Wu, Jiang-Bin; Peng, Peng; Tan, Ping-Heng; Sun, Zhipei; Kelleher, Edmund J R; Zhang, Meng; Xu, Yang; Hasan, Tawfique

2017-08-17

Black phosphorus is a two-dimensional material of great interest, in part because of its high carrier mobility and thickness dependent direct bandgap. However, its instability under ambient conditions limits material deposition options for device fabrication. Here we show a black phosphorus ink that can be reliably inkjet printed, enabling scalable development of optoelectronic and photonic devices. Our binder-free ink suppresses coffee ring formation through induced recirculating Marangoni flow, and supports excellent consistency (< 2% variation) and spatial uniformity (< 3.4% variation), without substrate pre-treatment. Due to rapid ink drying (< 10 s at < 60 °C), printing causes minimal oxidation. Following encapsulation, the printed black phosphorus is stable against long-term (> 30 days) oxidation. We demonstrate printed black phosphorus as a passive switch for ultrafast lasers, stable against intense irradiation, and as a visible to near-infrared photodetector with high responsivities. Our work highlights the promise of this material as a functional ink platform for printed devices.Atomically thin black phosphorus shows promise for optoelectronics and photonics, yet its instability under environmental conditions and the lack of well-established large-area synthesis protocols hinder its applications. Here, the authors demonstrate a stable black phosphorus ink suitable for printed ultrafast lasers and photodetectors.

Towards lead-free perovskite photovoltaics and optoelectronics by ab-initio simulations.

PubMed

Roknuzzaman, Md; Ostrikov, Kostya Ken; Wang, Hongxia; Du, Aijun; Tesfamichael, Tuquabo

2017-10-25

Lead (Pb) free non-toxic perovskite solar cells have become more important in the commercialization of the photovoltaic devices. In this study the structural, electronic, optical and mechanical properties of Pb-free inorganic metal halide cubic perovskites CsBX 3 (B = Sn, Ge; X = I, Br, Cl) for perovskite solar cells are simulated using first-principles Density Functional Theory (DFT). These compounds are semiconductors with direct band gap energy and mechanically stable. Results suggest that the materials have high absorption coefficient, low reflectivity and high optical conductivity with potential application in solar cells and other optoelectronic energy devices. On the basis of the optical properties, one can expect that the Germanium (Ge) would be a better replacement of Pb as Ge containing compounds have higher optical absorption and optical conductivity than that of Pb containing compounds. A combinational analysis of the electronic, optical and mechanical properties of the compounds suggests that CsGeI 3 based perovskite is the best Pb-free inorganic metal halide semiconductor for the solar cell application. However, the compound with solid solution of CsGe(I 0.7 Br 0.3 ) 3 is found to be mechanically more ductile than CsGeI 3 . This study will also guide to obtain Pb-free organic perovskites for optoelectronic devices.

Augmented Quantum Yield of a 2D Monolayer Photodetector by Surface Plasmon Coupling.

PubMed

Bang, Seungho; Duong, Ngoc Thanh; Lee, Jubok; Cho, Yoo Hyun; Oh, Hye Min; Kim, Hyun; Yun, Seok Joon; Park, Chulho; Kwon, Min-Ki; Kim, Ja-Yeon; Kim, Jeongyong; Jeong, Mun Seok

2018-04-11

Monolayer (1L) transition metal dichalcogenides (TMDCs) are promising materials for nanoscale optoelectronic devices because of their direct band gap and wide absorption range (ultraviolet to infrared). However, 1L-TMDCs cannot be easily utilized for practical optoelectronic device applications (e.g., photodetectors, solar cells, and light-emitting diodes) because of their extremely low optical quantum yields (QYs). In this investigation, a high-gain 1L-MoS 2 photodetector was successfully realized, based on the surface plasmon (SP) of the Ag nanowire (NW) network. Through systematic optical characterization of the hybrid structure consisting of a 1L-MoS 2 and the Ag NW network, it was determined that a strong SP and strain relaxation effect influenced a greatly enhanced optical QY. The photoluminescence (PL) emission was drastically increased by a factor of 560, and the main peak was shifted to the neutral exciton of 1L-MoS 2 . Consequently, the overall photocurrent of the hybrid 1L-MoS 2 photodetector was observed to be 250 times better than that of the pristine 1L-MoS 2 photodetector. In addition, the photoresponsivity and photodetectivity of the hybrid photodetector were effectively improved by a factor of ∼1000. This study provides a new approach for realizing highly efficient optoelectronic devices based on TMDCs.

Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

NASA Astrophysics Data System (ADS)

Jiang, Nian

III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application

PubMed Central

2014-01-01

In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a preferential growth orientation along [1 1¯ 0] direction. Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm2V-1 s-1 and hole concentration of 1.34 × 1018 cm-3, respectively. According to first-principle calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What is more, the CuO NW device was sensitive to visible light illumination with peak sensitivity at 600 nm. The responsitivity, conductive gain, and detectivity are estimated to be 2.0 × 102 A W-1, 3.95 × 102 and 6.38 × 1011 cm Hz1/2 W-1, respectively, which are better than the devices composed of other materials. Further study showed that nanophotodetectors assembled on flexible polyethylene terephthalate (PET) substrate can work under different bending conditions with good reproducibility. The totality of the above results suggests that the present CuO NWs are potential building blocks for assembling high-performance optoelectronic devices. PMID:25489288

Optoelectronic performance comparison of new thiophene linked benzimidazole conjugates with diverse substitution patterns

NASA Astrophysics Data System (ADS)

Saltan, Gözde Murat; Dinçalp, Haluk; Kırmacı, Eser; Kıran, Merve; Zafer, Ceylan

2018-01-01

In an approach to develop efficient organic optoelectronic devices to be used in light-driven systems, a series of three thiophene linked benzimidazole conjugates were synthesized and characterized. The combination of two thiophene rings to a benzimidazole core decorated with different functional groups (such as sbnd OCH3, sbnd N(CH3)2, sbnd CF3) resulted in donor-acceptor type molecular scaffold. The effect of the electronic behavior of the substituents on the optical, electrochemical, morphological and electron/hole transporting properties of the dyes were systematically investigated. DTBI2 dye exhibited distinct absorption properties among the other studied dyes because N,N-dimethylamino group initiated intramolecular charge transfer (ICT) process in the studied solvents. In solid state, the dyes exhibit peaks extending up to 600 nm. Depending on the solvent polarities, dyes show significant wavelength changes on their fluorescence emission spectra in the excited states. Morphological parameters of the thin films spin-coated from CHCl3 solution were investigated by using AFM instrument; furthermore photovoltaic responses are reported, even though photovoltaic performances of the fabricated solar cells with different configurations are quite low.

Exploring Alkyl Chains in Benzobisthiazole-Naphthobisthiadiazole Polymers: Impact on Solar-Cell Performance, Crystalline Structures, and Optoelectronics.

PubMed

Al-Naamani, Eman; Gopal, Anesh; Ide, Marina; Osaka, Itaru; Saeki, Akinori

2017-11-01

The shapes and lengths of the alkyl chains of conjugated polymers greatly affect the efficiencies of organic photovoltaic devices. This often results in a trade-off between solubility and self-organizing behavior; however, each material has specific optimal chains. Here we report on the effect of alkyl side chains on the film morphologies, crystallinities, and optoelectronic properties of new benzobisthiazole-naphthobisthiadiazole (PBBT-NTz) polymers. The power conversion efficiencies (PCEs) of linear-branched and all-branched polymers range from 2.5% to 6.6%; the variations in these PCEs are investigated by atomic force microscopy, two-dimensional X-ray diffraction (2D-GIXRD), and transient photoconductivity techniques. The best-performing linear-branched polymer, bearing dodecyl and decyltetradecyl chains (C12-DT), exhibits nanometer-scale fibers along with the highest crystallinity, comprising predominant edge-on and partial face-on orientations. This morphology leads to the highest photoconductivity and the longest carrier lifetime. These results highlight the importance of long alkyl chains for inducing intermolecular stacking, which is in contrast to observations made for analogous previously reported polymers.

Tailoring the Interfacial Chemical Interaction for High-Efficiency Perovskite Solar Cells.

PubMed

Zuo, Lijian; Chen, Qi; De Marco, Nicholas; Hsieh, Yao-Tsung; Chen, Huajun; Sun, Pengyu; Chang, Sheng-Yung; Zhao, Hongxiang; Dong, Shiqi; Yang, Yang

2017-01-11

The ionic nature of perovskite photovoltaic materials makes it easy to form various chemical interactions with different functional groups. Here, we demonstrate that interfacial chemical interactions are a critical factor in determining the optoelectronic properties of perovskite solar cells. By depositing different self-assembled monolayers (SAMs), we introduce different functional groups onto the SnO 2 surface to form various chemical interactions with the perovskite layer. It is observed that the perovskite solar cell device performance shows an opposite trend to that of the energy level alignment theory, which shows that chemical interactions are the predominant factor governing the interfacial optoelectronic properties. Further analysis verifies that proper interfacial interactions can significantly reduce trap state density and facilitate the interfacial charge transfer. Through use of the 4-pyridinecarboxylic acid SAM, the resulting perovskite solar cell exhibits striking improvements to the reach the highest efficiency of 18.8%, which constitutes an ∼10% enhancement compared to those without SAMs. Our work highlights the importance of chemical interactions at perovskite/electrode interfaces and paves the way for further optimizing performances of perovskite solar cells.

Platform technologies for hybrid optoelectronic integration and packaging

NASA Astrophysics Data System (ADS)

Datta, Madhumita

In order to bring fiber-optics closer to individual home and business services, the optical network components have to be inexpensive and reliable. Integration and packaging of optoelectronic devices holds the key to high-volume low-cost component manufacturing. The goal of this dissertation is to propose, study, and demonstrate various ways to integrate optoelectronic devices on a packaging platform to implement cost-effective, functional optical modules. Two types of hybrid integration techniques have been proposed: flip-chip solder bump bonding for high-density two-dimensional array packaging of surface-emitting devices, and solder preform bonding for fiber-coupled edge-emitting semiconductor devices. For flip-chip solder bump bonding, we developed a simple, inexpensive remetallization process called "electroless plating", which converts the aluminum bond pads of foundry-made complementary metal oxide semiconductor (CMOS) chips into solder-bondable and wire-bondable gold surfaces. We have applied for a patent on this remetallization technique. For fiber-pigtailed edge-emitting laser modules, we have studied the coupling characteristics of different types of lensed single-mode fibers including semispherically lensed fiber, cylindrically lensed fiber and conically lensed fiber. We have experimentally demonstrated 66% coupling efficiency with semispherically lensed fiber and 50% efficiency with conically lensed fibers. We have proposed and designed a packaging platform on which lensed fibers can be actively aligned to a laser and solder-attached reliably to the platform so that the alignment is retained. We have designed thin-film nichrome heaters on fused quartz platforms as local heat source to facilitate on-board solder alignment and attachment of fiber. The thermal performance of the heaters was simulated using finite element analysis tool ANSYS prior to fabrication. Using the heater's reworkability advantage, we have estimated the shift of the fiber due to solder shrinkage and introduced a pre-correction in the alignment process to restore optimum coupling efficiency close to 50% with conically lensed fibers. We have applied for a patent on this unique active alignment method through the University of Maryland's Technology Commercialization Office. Although we have mostly concentrated on active alignment platforms, we have proposed the idea of combining the passive alignment advantages of silicon optical benches to the on-board heater-assisted active alignment technique. This passive-active alignment process has the potential of cost-effective array packaging of edge-emitting devices.

Two-dimensional bismuth nanosheets as prospective photo-detector with tunable optoelectronic performance

NASA Astrophysics Data System (ADS)

Huang, Hao; Ren, Xiaohui; Li, Zhongjun; Wang, Huide; Huang, Zongyu; Qiao, Hui; Tang, Pinghua; Zhao, Jinlai; Liang, Weiyuan; Ge, Yanqi; Liu, Jie; Li, Jianqing; Qi, Xiang; Zhang, Han

2018-06-01

Two dimensional Bi nanosheets have been employed to fabricate electrodes for broadband photo-detection. A series of characterization techniques including scanning electron microscopy and high-resolution transmission electron microscopy have verified that Bi nanosheets with intact lamellar structure have been obtained after facile liquid phase exfoliation. In the meanwhile, UV–vis and Raman spectra are also carried out and the inherent optical and physical properties of Bi nanosheets are confirmed. Inherited from the topological characteristics of Bi bulk counterpart, the resultant Bi nanosheet-based photo-detector exhibits preferable photo-response activity as well as environmental robustness. We then evaluate the photo-electrochemical (PEC) performance of the photodetector in 1 M NaOH and 0.5 M Na2SO4 electrolytes, and demonstrated that the as-prepared Bi nanosheets may possess a great potential as PEC-type photo-detector. Additional PEC measurements show that the current density of Bi nanosheets can reach up to 830 nA cm‑2, while an enhanced responsivity (1.8 μA W‑1) had been achieved. We anticipate that this contribution can provide feasibility towards the construction of high-performance elemental Bi nanosheets-based optoelectronic devices in the future.

Two-dimensional bismuth nanosheets as prospective photo-detector with tunable optoelectronic performance.

PubMed

Huang, Hao; Ren, Xiaohui; Li, Zhongjun; Wang, Huide; Huang, Zongyu; Qiao, Hui; Tang, Pinghua; Zhao, Jinlai; Liang, Weiyuan; Ge, Yanqi; Liu, Jie; Li, Jianqing; Qi, Xiang; Zhang, Han

2018-06-08

Two dimensional Bi nanosheets have been employed to fabricate electrodes for broadband photo-detection. A series of characterization techniques including scanning electron microscopy and high-resolution transmission electron microscopy have verified that Bi nanosheets with intact lamellar structure have been obtained after facile liquid phase exfoliation. In the meanwhile, UV-vis and Raman spectra are also carried out and the inherent optical and physical properties of Bi nanosheets are confirmed. Inherited from the topological characteristics of Bi bulk counterpart, the resultant Bi nanosheet-based photo-detector exhibits preferable photo-response activity as well as environmental robustness. We then evaluate the photo-electrochemical (PEC) performance of the photodetector in 1 M NaOH and 0.5 M Na 2 SO 4 electrolytes, and demonstrated that the as-prepared Bi nanosheets may possess a great potential as PEC-type photo-detector. Additional PEC measurements show that the current density of Bi nanosheets can reach up to 830 nA cm -2 , while an enhanced responsivity (1.8 μA W -1 ) had been achieved. We anticipate that this contribution can provide feasibility towards the construction of high-performance elemental Bi nanosheets-based optoelectronic devices in the future.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

PubMed

Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

2014-12-21

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

Simulation of light in-coupling through an aperture probe to investigate light propagation in a thin layer for opto-electronic application

NASA Astrophysics Data System (ADS)

Ermes, Markus; Lehnen, Stephan; Cao, Zhao; Bittkau, Karsten; Carius, Reinhard

2015-06-01

In thin optoelectronic devices, like organic light emitting diodes (OLED) or thin-film solar cells (TFSC), light propagation, which is initiated by a local point source, is of particular importance. In OLEDs, light is generated in the layer by the luminescence of single molecules, whereas in TFSCs, light is coupled into the devices by scattering at small surface features. In both applications, light propagation within the active layers has a significant impact on the optical device performance. Scanning near-field optical microscopy (SNOM) using aperture probes is a powerful tool to investigate this propagation with a high spatial resolution. Dual-probe SNOM allows simulating the local light generation by an illumination probe as well as the detection of the light propagated through the layer. In our work, we focus on the light propagation in thin silicon films as used in thin-film silicon solar cells. We investigate the light-in-coupling from an illuminating probe via rigorous solution of Maxwell's equations using a Finite-Difference Time-Domain approach, especially to gain insight into the light distribution inside a thin layer, which is not accessible in the experiment. The structures investigated include at and structured surfaces with varying illumination positions and wavelengths. From the performed simulations, we define a "spatial sensitivity" which is characteristic for the local structure and illumination position. This quantity can help to identify structures which are beneficial as well as detrimental to absorption inside the investigated layer. We find a strong dependence of the spatial sensitivity on the surface structure as well as both the absorption coefficient and the probe position. Furthermore, we investigate inhomogeneity in local light propagation resulting from different surface structures and illumination positions.

Dipole-allowed direct band gap silicon superlattices

PubMed Central

Oh, Young Jun; Lee, In-Ho; Kim, Sunghyun; Lee, Jooyoung; Chang, Kee Joo

2015-01-01

Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable pure-silicon superlattice structures that can serve as promising materials for solar cell applications and can lead to the realization of pure Si-based optoelectronic devices. The structures are almost identical to that of bulk Si except that defective layers are intercalated in the diamond lattice. The superlattices exhibit dipole-allowed direct band gaps as well as indirect band gaps, providing ideal conditions for the investigation of a direct-to-indirect band gap transition. The fact that almost all structural portions of the superlattices originate from bulk Si warrants their stability and good lattice matching with bulk Si. Through first-principles molecular dynamics simulations, we confirmed their thermal stability and propose a possible method to synthesize the defective layer through wafer bonding. PMID:26656482

Non-Toxic Gold Nanoclusters for Solution-Processed White Light-Emitting Diodes.

PubMed

Chao, Yu-Chiang; Cheng, Kai-Ping; Lin, Ching-Yi; Chang, Yu-Li; Ko, Yi-Yun; Hou, Tzu-Yin; Huang, Cheng-Yi; Chang, Walter H; Lin, Cheng-An J

2018-06-11

Solution-processed optoelectronic devices are attractive because of the potential low-cost fabrication and the compatibility with flexible substrate. However, the utilization of toxic elements such as lead and cadmium in current optoelectronic devices on the basis of colloidal quantum dots raises environmental concerns. Here we demonstrate that white-light-emitting diodes can be achieved by utilizing non-toxic and environment-friendly gold nanoclusters. Yellow-light-emitting gold nanoclusters were synthesized and capped with trioctylphosphine. These gold nanoclusters were then blended with the blue-light-emitting organic host materials to form the emissive layer. A current efficiency of 0.13 cd/A was achieved. The Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.33) were obtained from our experimental analysis, which is quite close to the ideal pure white emission coordinates (0.33, 0.33). Potential applications include innovative lighting devices and monitor backlight.

One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

PubMed Central

2009-01-01

The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2nanowires, one-dimensional (1-D) nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, andp–nheterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities. PMID:20596452

Photonic integrated circuits based on sampled-grating distributed-Bragg-reflector lasers

NASA Astrophysics Data System (ADS)

Barton, Jonathon S.; Skogen, Erik J.; Masanovic, Milan L.; Raring, James; Sysak, Matt N.; Johansson, Leif; DenBaars, Steven P.; Coldren, Larry A.

2003-07-01

The Sampled-Grating Distributed-Bragg-Reflector laser(SGDBR) provides wide tunability (>40nm), and high output power (>10mW). Driven by the demand for network reconfigurability and ease of implementation, the SGDBR has moved from the research lab to be commercially viable in the marketplace. The SGDBR is most often implemented using an offset-quantum well epitaxial structure in which the quantum wells are etched off in the passive sections. Alternatively, quantum well intermixing has been used recently to achieve the same goal - resulting in improved optical gain and the potential for multiple bandgaps along the device structure. These epitaxial "platforms" provide the basis for more exotic opto-electronic device functionality exhibiting low chirp for digital applications and enhanced linearity for analog applications. This talk will cover state-of-the-art opto-electronic devices based on the SGDBR platform including: integrated Mach-Zehnder modulators, and integrated electro-absorption modulators.

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean -Christophe

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grownmore » on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. Here, these results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices.« less

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide.

PubMed

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean-Christophe; Liu, Fangze; Stoumpos, Costas C; Traore, Boubacar; Kepenekian, Mikael; Durand, Olivier; Katan, Claudine; Tretiak, Sergei; Crochet, Jared; Ajayan, Pulickel M; Kanatzidis, MercouriG; Even, Jacky; Mohite, Aditya D

2018-02-01

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grown on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. These results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide

DOE PAGES

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean -Christophe; ...

2017-12-11

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grownmore » on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. Here, these results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices.« less

OPTOELECTRONICS, FIBER OPTICS, AND OTHER ASPECTS OF QUANTUM ELECTRONICS: Nonlinear optical devices: basic elements of a future optical digital computer?

NASA Astrophysics Data System (ADS)

Fischer, R.; Müller, R.

1989-08-01

It is shown that nonlinear optical devices are the most promising elements for an optical digital supercomputer. The basic characteristics of various developed nonlinear elements are presented, including bistable Fabry-Perot etalons, interference filters, self-electrooptic effect devices, quantum-well devices utilizing transitions between the lowest electron states in the conduction band of GaAs, etc.

Optoelectronic devices toward monolithic integration

NASA Astrophysics Data System (ADS)

Ghergia, V.

1992-12-01

Starting from the present state of tl art of discrete devices up to the on going realization of monolithic semicorxtuctor integrated prototypes an overview ofoptoelectronic devices for telecom applications is given inchiding a short classification of the different kind of integrated devices. On the future perspective of IBCN distribution network some economica of hybrid and monolithic forms of integration are attempted. lnaflyashoitpresentationoftheactivitiesperformedintbefieldofmonolithic integration by EEC ESPR1T and RACE projects is reported. 1.

Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors.

PubMed

Nasiri, Noushin; Bo, Renheng; Fu, Lan; Tricoli, Antonio

2017-02-02

Visible-blind ultraviolet photodetectors are a promising emerging technology for the development of wide bandgap optoelectronic devices with greatly reduced power consumption and size requirements. A standing challenge is to improve the slow response time of these nanostructured devices. Here, we present a three-dimensional nanoscale heterojunction architecture for fast-responsive visible-blind UV photodetectors. The device layout consists of p-type NiO clusters densely packed on the surface of an ultraporous network of electron-depleted n-type ZnO nanoparticles. This 3D structure can detect very low UV light densities while operating with a near-zero power consumption of ca. 4 × 10 -11 watts and a low bias of 0.2 mV. Most notably, heterojunction formation decreases the device rise and decay times by 26 and 20 times, respectively. These drastic enhancements in photoresponse dynamics are attributed to the stronger surface band bending and improved electron-hole separation of the nanoscale NiO/ZnO interface. These findings demonstrate a superior structural design and a simple, low-cost CMOS-compatible process for the engineering of high-performance wearable photodetectors.

Self-assembled nanotextures impart broadband transparency to glass windows and solar cell encapsulants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liapis, Andreas C.; Rahman, Atikur; Black, Charles T.

Most optoelectronic components and consumer display devices require glass or plastic covers for protection against the environment. Optical reflections from these encapsulation layers can degrade the device performance or lessen the user experience. In this paper, we use a highly scalable self-assembly based approach to texture glass surfaces at the nanoscale, reducing reflections by such an extent so as to make the glass essentially invisible. Our nanotextures provide broadband antireflection spanning visible and infrared wavelengths (450–2500 nm) that is effective even at large angles of incidence. This technology can be used to improve the performance of photovoltaic devices by eliminatingmore » reflection losses, which can be as much as 8% for glass encapsulated cells. In contrast, solar cells encapsulated with nanotextured glass generate the same photocurrent as when operated without a cover. Finally, ultra-transparent windows having surface nanotextures on both sides can withstand three times more optical fluence than commercial broadband antireflection coatings, making them useful for pulsed laser applications.« less

Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

NASA Astrophysics Data System (ADS)

Cheng, Chuan-Hui; Zhang, Bi-Long; Sun, Chao; Li, Ruo-Xuan; Wang, Yuan; Tian, Wen-Ming; Zhao, Chun-Yi; Jin, Sheng-Ye; Liu, Wei-Feng; Luo, Ying-Min; Du, Guo-Tong; Cong, Shu-Lin

2017-06-01

A highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq3 (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m2. In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m2 decreases from 13 to 8 V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices.

Self-assembled nanotextures impart broadband transparency to glass windows and solar cell encapsulants

DOE PAGES

Liapis, Andreas C.; Rahman, Atikur; Black, Charles T.

2017-10-30

Most optoelectronic components and consumer display devices require glass or plastic covers for protection against the environment. Optical reflections from these encapsulation layers can degrade the device performance or lessen the user experience. In this paper, we use a highly scalable self-assembly based approach to texture glass surfaces at the nanoscale, reducing reflections by such an extent so as to make the glass essentially invisible. Our nanotextures provide broadband antireflection spanning visible and infrared wavelengths (450–2500 nm) that is effective even at large angles of incidence. This technology can be used to improve the performance of photovoltaic devices by eliminatingmore » reflection losses, which can be as much as 8% for glass encapsulated cells. In contrast, solar cells encapsulated with nanotextured glass generate the same photocurrent as when operated without a cover. Finally, ultra-transparent windows having surface nanotextures on both sides can withstand three times more optical fluence than commercial broadband antireflection coatings, making them useful for pulsed laser applications.« less

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolat, Sami, E-mail: bolat@ee.bilkent.edu.tr; Tekcan, Burak; Ozgit-Akgun, Cagla

2015-01-15

Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels aremore » observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.« less

A self-assembled microbonded germanium/silicon heterojunction photodiode for 25 Gb/s high-speed optical interconnects

PubMed Central

Tseng, Chih-Kuo; Chen, Wei-Ting; Chen, Ku-Hung; Liu, Han-Din; Kang, Yimin; Na, Neil; Lee, Ming-Chang M.

2013-01-01

A novel technique using surface tension to locally bond germanium (Ge) on silicon (Si) is presented for fabricating high performance Ge/Si photodiodes. Surface tension is a cohesive force among liquid molecules that tends to bring contiguous objects in contact to maintain a minimum surface energy. We take advantage of this phenomenon to fabricate a heterojunction optoelectronic device where the lattice constants of joined semiconductors are different. A high-speed Ge/Si heterojunction waveguide photodiode is presented by microbonding a beam-shaped Ge, first grown by rapid-melt-growth (RMG) method, on top of a Si waveguide via surface tension. Excellent device performances such as an operating bandwidth of 17 GHz and a responsivity of 0.66 and 0.70 A/W at the reverse bias of −4 and −6 V, respectively, are demonstrated. This technique can be simply implemented via modern complementary metal-oxide-semiconductor (CMOS) fabrication technologies for integrating Ge on Si devices. PMID:24232956

Self-assembled nanotextures impart broadband transparency to glass windows and solar cell encapsulants

NASA Astrophysics Data System (ADS)

Liapis, Andreas C.; Rahman, Atikur; Black, Charles T.

2017-10-01

Most optoelectronic components and consumer display devices require glass or plastic covers for protection against the environment. Optical reflections from these encapsulation layers can degrade the device performance or lessen the user experience. Here, we use a highly scalable self-assembly based approach to texture glass surfaces at the nanoscale, reducing reflections by such an extent so as to make the glass essentially invisible. Our nanotextures provide broadband antireflection spanning visible and infrared wavelengths (450-2500 nm) that is effective even at large angles of incidence. This technology can be used to improve the performance of photovoltaic devices by eliminating reflection losses, which can be as much as 8% for glass encapsulated cells. In contrast, solar cells encapsulated with nanotextured glass generate the same photocurrent as when operated without a cover. Ultra-transparent windows having surface nanotextures on both sides can withstand three times more optical fluence than commercial broadband antireflection coatings, making them useful for pulsed laser applications.

The ship-borne infrared searching and tracking system based on the inertial platform

NASA Astrophysics Data System (ADS)

Li, Yan; Zhang, Haibo

2011-08-01

As a result of the radar system got interferenced or in the state of half silent ,it can cause the guided precision drop badly In the modern electronic warfare, therefore it can lead to the equipment depended on electronic guidance cannot strike the incoming goals exactly. It will need to rely on optoelectronic devices to make up for its shortcomings, but when interference is in the process of radar leading ,especially the electro-optical equipment is influenced by the roll, pitch and yaw rotation ,it can affect the target appear outside of the field of optoelectronic devices for a long time, so the infrared optoelectronic equipment can not exert the superiority, and also it cannot get across weapon-control system "reverse bring" missile against incoming goals. So the conventional ship-borne infrared system unable to track the target of incoming quickly , the ability of optoelectronic rivalry declines heavily.Here we provide a brand new controlling algorithm for the semi-automatic searching and infrared tracking based on inertial navigation platform. Now it is applying well in our XX infrared optoelectronic searching and tracking system. The algorithm is mainly divided into two steps: The artificial mode turns into auto-searching when the deviation of guide exceeds the current scene under the course of leading for radar.When the threshold value of the image picked-up is satisfied by the contrast of the target in the searching scene, the speed computed by using the CA model Least Square Method feeds back to the speed loop. And then combine the infrared information to accomplish the closed-loop control of the infrared optoelectronic system tracking. The algorithm is verified via experiment. Target capturing distance is 22.3 kilometers on the great lead deviation by using the algorithm. But without using the algorithm the capturing distance declines 12 kilometers. The algorithm advances the ability of infrared optoelectronic rivalry and declines the target capturing time by using semi-automatic searching and reliable capturing-tracking, when the lead deviation of the radar is great.

Polymer-modified halide perovskite films for efficient and stable planar heterojunction solar cells

PubMed Central

Zuo, Lijian; Guo, Hexia; deQuilettes, Dane W.; Jariwala, Sarthak; De Marco, Nicholas; Dong, Shiqi; DeBlock, Ryan; Ginger, David S.; Dunn, Bruce; Wang, Mingkui; Yang, Yang

2017-01-01

The solution processing of polycrystalline perovskite films introduces trap states that can adversely affect their optoelectronic properties. Motivated by the use of small-molecule surfactants to improve the optoelectronic performance of perovskites, we demonstrate the use of polymers with coordinating groups to improve the performance of solution-processed semiconductor films. The use of these polymer modifiers results in a marked change in the electronic properties of the films, as measured by both carrier dynamics and overall device performance. The devices grown with the polymer poly(4-vinylpyridine) (PVP) show significantly enhanced power conversion efficiency from 16.9 ± 0.7% to 18.8 ± 0.8% (champion efficiency, 20.2%) from a reverse scan and stabilized champion efficiency from 17.5 to 19.1% [under a bias of 0.94 V and AM (air mass) 1.5-G, 1-sun illumination over 30 min] compared to controls without any passivation. Treating the perovskite film with PVP enables a VOC of up to 1.16 V, which is among the best reported for a CH3NH3PbI3 perovskite solar cell and one of the lowest voltage deficits reported for any perovskite to date. In addition, perovskite solar cells treated with PVP show a long shelf lifetime of up to 90 days (retaining 85% of the initial efficiency) and increased by a factor of more than 20 compared to those without any polymer (degrading to 85% after ~4 days). Our work opens up a new class of chemical additives for improving perovskite performance and should pave the way toward improving perovskite solar cells for high efficiency and stability. PMID:28845446

Investigational Clinical Trial of a Prototype Optoelectronic Computer-Aided Navigation Device for Dental Implant Surgery.

PubMed

Jokstad, Asbjørn; Winnett, Brenton; Fava, Joseph; Powell, David; Somogyi-Ganss, Eszter

New digital technologies enable real-time computer-aided (CA) three-dimensional (3D) guidance during dental implant surgery. The aim of this investigational clinical trial was to demonstrate the safety and effectiveness of a prototype optoelectronic CA-navigation device in comparison with the conventional approach for planning and effecting dental implant surgery. Study participants with up to four missing teeth were recruited from the pool of patients referred to the University of Toronto Graduate Prosthodontics clinic. The first 10 participants were allocated to either a conventional or a prototype device study arm in a randomized trial. The next 10 participants received implants using the prototype device. All study participants were restored with fixed dental prostheses after 3 (mandible) or 6 (maxilla) months healing, and monitored over 12 months. The primary outcome was the incidence of any surgical, biologic, or prosthetic adverse events or device-related complications. Secondary outcomes were the incidence of positioning of implants not considered suitable for straightforward prosthetic restoration (yes/no); the perception of the ease of use of the prototype device by the two oral surgeons, recorded by use of a Likert-type questionnaire; and the clinical performance of the implant and superstructure after 1 year in function. Positioning of the implants was appraised on periapical radiographs and clinical photographs by four independent blinded examiners. Peri-implant bone loss was measured on periapical radiographs by a blinded examiner. No adverse events occurred related to placing any implants. Four device-related complications led to a switch from using the prototype device to the conventional method. All implants placed by use of the prototype device were in a position considered suitable for straightforward prosthetic restoration (n = 21). The qualitative evaluation by the surgeons was generally positive, although ergonomic challenges were identified. All study participants were present for the 1-year examination (n = 20 patients, 41 implants, 32 superstructures), and no complications or failures with any implants or superstructures were revealed. The peri-implant bone loss was less than 1 mm for all implants. Within the limitations of this trial, the prototype device provided placement of dental implants without adverse events.

Anisotropic visible photoluminescence from thermally annealed few-layer black phosphorus.

PubMed

Zhao, Chuan; Sekhar, M Chandra; Lu, Wei; Zhang, Chenglong; Lai, Jiawei; Jia, Shuang; Sun, Dong

2018-06-15

Black phosphorus, a two-dimensional material, with high carrier mobility, tunable direct bandgap and anisotropic electronic properties has attracted enormous research interest towards potential application in electronic, optoelectronic and optomechanical devices. The bandgap of BP is thickness dependent, ranging from 0.3 eV for bulk to 1.3 eV for monolayer, while lacking in the visible region, a widely used optical regime for practical optoelectronic applications. In this work, photoluminescence (PL) centered at 605 nm is observed from the thermally annealed BP with thickness ≤20 nm. This higher energy PL is most likely the consequence of the formation of higher bandgap phosphorene oxides and suboxides on the surface BP layers as a result of the enhanced rate of oxidation. Moreover, the polarization-resolved PL measurements show that the emitted light is anisotropic when the excitation polarization is along the armchair direction. However, if excited along zigzag direction, the PL is nearly isotropic. Our findings suggest that the thermal annealing of BP can be used as a convenient route to fill the visible gap of the BP-based optoelectronic and optomechanical devices.

Anisotropic visible photoluminescence from thermally annealed few-layer black phosphorus

NASA Astrophysics Data System (ADS)

Zhao, Chuan; Sekhar, M. Chandra; Lu, Wei; Zhang, Chenglong; Lai, Jiawei; Jia, Shuang; Sun, Dong

2018-06-01

Black phosphorus, a two-dimensional material, with high carrier mobility, tunable direct bandgap and anisotropic electronic properties has attracted enormous research interest towards potential application in electronic, optoelectronic and optomechanical devices. The bandgap of BP is thickness dependent, ranging from 0.3 eV for bulk to 1.3 eV for monolayer, while lacking in the visible region, a widely used optical regime for practical optoelectronic applications. In this work, photoluminescence (PL) centered at 605 nm is observed from the thermally annealed BP with thickness ≤20 nm. This higher energy PL is most likely the consequence of the formation of higher bandgap phosphorene oxides and suboxides on the surface BP layers as a result of the enhanced rate of oxidation. Moreover, the polarization-resolved PL measurements show that the emitted light is anisotropic when the excitation polarization is along the armchair direction. However, if excited along zigzag direction, the PL is nearly isotropic. Our findings suggest that the thermal annealing of BP can be used as a convenient route to fill the visible gap of the BP-based optoelectronic and optomechanical devices.

Thermal engineering of FAPbI3 perovskite material via radiative thermal annealing and in situ XRD

PubMed Central

Pool, Vanessa L.; Dou, Benjia; Van Campen, Douglas G.; Klein-Stockert, Talysa R.; Barnes, Frank S.; Shaheen, Sean E.; Ahmad, Md I.; van Hest, Maikel F. A. M.; Toney, Michael F.

2017-01-01

Lead halide perovskites have emerged as successful optoelectronic materials with high photovoltaic power conversion efficiencies and low material cost. However, substantial challenges remain in the scalability, stability and fundamental understanding of the materials. Here we present the application of radiative thermal annealing, an easily scalable processing method for synthesizing formamidinium lead iodide (FAPbI3) perovskite solar absorbers. Devices fabricated from films formed via radiative thermal annealing have equivalent efficiencies to those annealed using a conventional hotplate. By coupling results from in situ X-ray diffraction using a radiative thermal annealing system with device performances, we mapped the processing phase space of FAPbI3 and corresponding device efficiencies. Our map of processing-structure-performance space suggests the commonly used FAPbI3 annealing time, 10 min at 170 °C, can be significantly reduced to 40 s at 170 °C without affecting the photovoltaic performance. The Johnson-Mehl-Avrami model was used to determine the activation energy for decomposition of FAPbI3 into PbI2. PMID:28094249

Thermal engineering of FAPbI 3 perovskite material via radiative thermal annealing and in situ XRD

DOE PAGES

Pool, Vanessa L.; Dou, Benjia; Van Campen, Douglas G.; ...

2017-01-17

Lead halide perovskites have emerged as successful optoelectronic materials with high photovoltaic power conversion efficiencies and low material cost. However, substantial challenges remain in the scalability, stability and fundamental understanding of the materials. Here we present the application of radiative thermal annealing, an easily scalable processing method for synthesizing formamidinium lead iodide (FAPbI 3) perovskite solar absorbers. Devices fabricated from films formed via radiative thermal annealing have equivalent efficiencies to those annealed using a conventional hotplate. By coupling results from in situ X-ray diffraction using a radiative thermal annealing system with device performances, we mapped the processing phase space ofmore » FAPbI 3 and corresponding device efficiencies. Our map of processing-structure-performance space suggests the commonly used FAPbI 3 annealing time, 10 min at 170 degrees C, can be significantly reduced to 40 s at 170 degrees C without affecting the photovoltaic performance. Lastly, the Johnson-Mehl-Avrami model was used to determine the activation energy for decomposition of FAPbI 3 into PbI 2.« less

Atomically thin p-n junctions with van der Waals heterointerfaces.

PubMed

Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M; Chen, Wenchao; Li, Yilei; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Nuckolls, Colin; Heinz, Tony F; Guo, Jing; Hone, James; Kim, Philip

2014-09-01

Semiconductor p-n junctions are essential building blocks for electronic and optoelectronic devices. In conventional p-n junctions, regions depleted of free charge carriers form on either side of the junction, generating built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes influenced by the spatial extent of this depletion region. With the advent of atomically thin van der Waals materials and their heterostructures, it is now possible to realize a p-n junction at the ultimate thickness limit. Van der Waals junctions composed of p- and n-type semiconductors--each just one unit cell thick--are predicted to exhibit completely different charge transport characteristics than bulk heterojunctions. Here, we report the characterization of the electronic and optoelectronic properties of atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides. We observe gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances the collection of the photoexcited carriers. The atomically scaled van der Waals p-n heterostructures presented here constitute the ultimate functional unit for nanoscale electronic and optoelectronic devices.

Organic-inorganic hybrid lead halide perovskites for optoelectronic and electronic applications.

PubMed

Zhao, Yixin; Zhu, Kai

2016-02-07

Organic and inorganic hybrid perovskites (e.g., CH(3)NH(3)PbI(3)), with advantages of facile processing, tunable bandgaps, and superior charge-transfer properties, have emerged as a new class of revolutionary optoelectronic semiconductors promising for various applications. Perovskite solar cells constructed with a variety of configurations have demonstrated unprecedented progress in efficiency, reaching about 20% from multiple groups after only several years of active research. A key to this success is the development of various solution-synthesis and film-deposition techniques for controlling the morphology and composition of hybrid perovskites. The rapid progress in material synthesis and device fabrication has also promoted the development of other optoelectronic applications including light-emitting diodes, photodetectors, and transistors. Both experimental and theoretical investigations on organic-inorganic hybrid perovskites have enabled some critical fundamental understandings of this material system. Recent studies have also demonstrated progress in addressing the potential stability issue, which has been identified as a main challenge for future research on halide perovskites. Here, we review recent progress on hybrid perovskites including basic chemical and crystal structures, chemical synthesis of bulk/nanocrystals and thin films with their chemical and physical properties, device configurations, operation principles for various optoelectronic applications (with a focus on solar cells), and photophysics of charge-carrier dynamics. We also discuss the importance of further understanding of the fundamental properties of hybrid perovskites, especially those related to chemical and structural stabilities.

Injectable, cellular-scale optoelectronics with applications for wireless optogenetics.

PubMed

Kim, Tae-il; McCall, Jordan G; Jung, Yei Hwan; Huang, Xian; Siuda, Edward R; Li, Yuhang; Song, Jizhou; Song, Young Min; Pao, Hsuan An; Kim, Rak-Hwan; Lu, Chaofeng; Lee, Sung Dan; Song, Il-Sun; Shin, Gunchul; Al-Hasani, Ream; Kim, Stanley; Tan, Meng Peun; Huang, Yonggang; Omenetto, Fiorenzo G; Rogers, John A; Bruchas, Michael R

2013-04-12

Successful integration of advanced semiconductor devices with biological systems will accelerate basic scientific discoveries and their translation into clinical technologies. In neuroscience generally, and in optogenetics in particular, the ability to insert light sources, detectors, sensors, and other components into precise locations of the deep brain yields versatile and important capabilities. Here, we introduce an injectable class of cellular-scale optoelectronics that offers such features, with examples of unmatched operational modes in optogenetics, including completely wireless and programmed complex behavioral control over freely moving animals. The ability of these ultrathin, mechanically compliant, biocompatible devices to afford minimally invasive operation in the soft tissues of the mammalian brain foreshadow applications in other organ systems, with potential for broad utility in biomedical science and engineering.

Materials for optoelectronic devices

DOEpatents

Shiang, Joseph John; Smigelski, Jr., Paul Michael

2015-01-27

Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

INK-JET PRINTING OF PF6 FOR OLED APPLICATIONS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burrasca, G.; Fasolino, T.; Miscioscia, R.

2008-08-28

In the last years there has been much interest in applying ink-jet printing (IJP) technology to the deposition of several materials for organic electronics applications, including metals, polymers and nanoparticles dispersions on flexible substrates. The aim of this work is to study the effect of ink-jet deposition of polymer films in the manufacturing of OLED devices comparing their performances to standard technologies. The ink-jet printed polymer is introduced in an hybrid structure in which other layers are deposited by vacuum thermal evaporation. The electrical and optical properties of the obtained devices are investigated.OLEDs with the same structure were fabricated bymore » spin-coating a polymer film by the same solution used as ink. Results have been compared to the above ones to determine how the deposition method affects the device optoelectronic properties.« less

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

DOE PAGES

Kaplar, R. J.; Allerman, A. A.; Armstrong, A. M.; ...

2016-12-20

“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludesmore » with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.« less

TEM-nanoindentation studies of semiconducting structures.

PubMed

Le Bourhis, E; Patriarche, G

2007-01-01

This paper reviews the application of nanoindentation coupled with transmission electron microscopy (TEM) to investigations of the plastic behaviour of semiconducting structures and its implication for device design. Instrumented nanoindentation has been developed to extract the mechanical behaviour of small volumes scaled to those encountered in semiconductor heterostructures. We illustrate that TEM is a powerful complementary tool for the study of local plasticity induced by nanoindentation. TEM-nanoindentation allows for detailed understanding of the plastic deformation in semiconducting structures and opens practical routes for improvement of devices. Performances of heterostructures are deteriously affected by dislocations that relax the lattice mismatched layers. Different ways to obtain compliant substructures are being developed in order to concentrate the plastic relaxation underneath the heterostructure. Such approaches allow for mechanical design of micro- and opto-electronic devices to be considered throughout the fabrication process.

Study and characterization of a MEMS micromirror device

NASA Astrophysics Data System (ADS)

Furlong, Cosme; Pryputniewicz, Ryszard J.

2004-08-01

In this paper, advances in our study and characterization of a MEMS micromirror device are presented. The micromirror device, of 510 mm characteristic length, operates in a dynamic mode with a maximum displacement on the order of 10 mm along its principal optical axis and oscillation frequencies of up to 1.3 kHz. Developments are carried on by analytical, computational, and experimental methods. Analytical and computational nonlinear geometrical models are developed in order to determine the optimal loading-displacement operational characteristics of the micromirror. Due to the operational mode of the micromirror, the experimental characterization of its loading-displacement transfer function requires utilization of advanced optical metrology methods. Optoelectronic holography (OEH) methodologies based on multiple wavelengths that we are developing to perform such characterization are described. It is shown that the analytical, computational, and experimental approach is effective in our developments.

The effect of coolants on the performance of magnetic micro-refrigerators.

PubMed

Silva, D J; Bordalo, B D; Pereira, A M; Ventura, J; Oliveira, J C R E; Araújo, J P

2014-06-01

Magnetic refrigeration is an alternative cooling technique with envisaged technological applications on micro- and opto-electronic devices. Here, we present a magnetic micro-refrigerator cooling device with embedded micro-channels and based on the magnetocaloric effect. We studied the influence of the coolant fluid in the refrigeration process by numerically simulating the heat transfer processes using the finite element method. This allowed us to calculate the cooling power of the device. Our results show that gallium is the most efficient coolant fluid and, when used with Gd5Si2Ge2, a maximum power of 11.2 W/mm3 at a working frequency of -5 kHz can be reached. However, for operation frequencies around 50 Hz, water is the most efficient fluid with a cooling power of 0.137 W/mm3.

Low-Cost, Rapidly Responsive, Controllable, and Reversible Photochromic Hydrogel for Display and Storage.

PubMed

Yang, Yongqi; Guan, Lin; Gao, Guanghui

2018-04-25

Traditional optoelectronic devices without stretchable performance could be limited for substrates with irregular shape. Therefore, it is urgent to explore a new generation of flexible, stretchable, and low-cost intelligent vehicles as visual display and storage devices, such as hydrogels. In the investigation, a novel photochromic hydrogel was developed by introducing the negatively charged ammonium molybdate as a photochromic unit into polyacrylamide via ionic and covalent cross-linking. The hydrogel exhibited excellent properties of low cost, easy preparation, stretchable deformation, fatigue resistance, high transparency, and second-order response to external signals. Moreover, the photochromic and fading process of hydrogels could be precisely controlled and repeated under the irradiation of UV light and exposure of oxygen at different time and temperature. The photochromic hydrogel could be considered applied for artificial intelligence system, wearable healthcare device, and flexible memory device. Therefore, the strategy for designing a soft photochromic material would open a new direction to manufacture flexible and stretchable devices.

Ultra-Smooth, Fully Solution-Processed Large-Area Transparent Conducting Electrodes for Organic Devices

PubMed Central

Jin, Won-Yong; Ginting, Riski Titian; Ko, Keum-Jin; Kang, Jae-Wook

2016-01-01

A novel approach for the fabrication of ultra-smooth and highly bendable substrates consisting of metal grid-conducting polymers that are fully embedded into transparent substrates (ME-TCEs) was successfully demonstrated. The fully printed ME-TCEs exhibited ultra-smooth surfaces (surface roughness ~1.0 nm), were highly transparent (~90% transmittance at a wavelength of 550 nm), highly conductive (sheet resistance ~4 Ω ◻−1), and relatively stable under ambient air (retaining ~96% initial resistance up to 30 days). The ME-TCE substrates were used to fabricate flexible organic solar cells and organic light-emitting diodes exhibiting devices efficiencies comparable to devices fabricated on ITO/glass substrates. Additionally, the flexibility of the organic devices did not degrade their performance even after being bent to a bending radius of ~1 mm. Our findings suggest that ME-TCEs are a promising alternative to indium tin oxide and show potential for application toward large-area optoelectronic devices via fully printing processes. PMID:27808221

Flexible Light Emission Diode Arrays Made of Transferred Si Microwires-ZnO Nanofilm with Piezo-Phototronic Effect Enhanced Lighting.

PubMed

Li, Xiaoyi; Liang, Renrong; Tao, Juan; Peng, Zhengchun; Xu, Qiming; Han, Xun; Wang, Xiandi; Wang, Chunfeng; Zhu, Jing; Pan, Caofeng; Wang, Zhong Lin

2017-04-25

Due to the fragility and the poor optoelectronic performances of Si, it is challenging and exciting to fabricate the Si-based flexible light-emitting diode (LED) array devices. Here, a flexible LED array device made of Si microwires-ZnO nanofilm, with the advantages of flexibility, stability, lightweight, and energy savings, is fabricated and can be used as a strain sensor to demonstrate the two-dimensional pressure distribution. Based on piezo-phototronic effect, the intensity of the flexible LED array can be increased more than 3 times (under 60 MPa compressive strains). Additionally, the device is stable and energy saving. The flexible device can still work well after 1000 bending cycles or 6 months placed in the atmosphere, and the power supplied to the flexible LED array is only 8% of the power of the surface-contact LED. The promising Si-based flexible device has wide range application and may revolutionize the technologies of flexible screens, touchpad technology, and smart skin.

Ultra-Smooth, Fully Solution-Processed Large-Area Transparent Conducting Electrodes for Organic Devices

NASA Astrophysics Data System (ADS)

Jin, Won-Yong; Ginting, Riski Titian; Ko, Keum-Jin; Kang, Jae-Wook

2016-11-01

A novel approach for the fabrication of ultra-smooth and highly bendable substrates consisting of metal grid-conducting polymers that are fully embedded into transparent substrates (ME-TCEs) was successfully demonstrated. The fully printed ME-TCEs exhibited ultra-smooth surfaces (surface roughness ~1.0 nm), were highly transparent (~90% transmittance at a wavelength of 550 nm), highly conductive (sheet resistance ~4 Ω ◻-1), and relatively stable under ambient air (retaining ~96% initial resistance up to 30 days). The ME-TCE substrates were used to fabricate flexible organic solar cells and organic light-emitting diodes exhibiting devices efficiencies comparable to devices fabricated on ITO/glass substrates. Additionally, the flexibility of the organic devices did not degrade their performance even after being bent to a bending radius of ~1 mm. Our findings suggest that ME-TCEs are a promising alternative to indium tin oxide and show potential for application toward large-area optoelectronic devices via fully printing processes.

Ultra-Smooth, Fully Solution-Processed Large-Area Transparent Conducting Electrodes for Organic Devices.

PubMed

Jin, Won-Yong; Ginting, Riski Titian; Ko, Keum-Jin; Kang, Jae-Wook

2016-11-03

A novel approach for the fabrication of ultra-smooth and highly bendable substrates consisting of metal grid-conducting polymers that are fully embedded into transparent substrates (ME-TCEs) was successfully demonstrated. The fully printed ME-TCEs exhibited ultra-smooth surfaces (surface roughness ~1.0 nm), were highly transparent (~90% transmittance at a wavelength of 550 nm), highly conductive (sheet resistance ~4 Ω ◻ -1 ), and relatively stable under ambient air (retaining ~96% initial resistance up to 30 days). The ME-TCE substrates were used to fabricate flexible organic solar cells and organic light-emitting diodes exhibiting devices efficiencies comparable to devices fabricated on ITO/glass substrates. Additionally, the flexibility of the organic devices did not degrade their performance even after being bent to a bending radius of ~1 mm. Our findings suggest that ME-TCEs are a promising alternative to indium tin oxide and show potential for application toward large-area optoelectronic devices via fully printing processes.

Photoresponse of polyaniline-functionalized graphene quantum dots

NASA Astrophysics Data System (ADS)

Lai, Sin Ki; Luk, Chi Man; Tang, Libin; Teng, Kar Seng; Lau, Shu Ping

2015-03-01

Polyaniline-functionalized graphene quantum dots (PANI-GQD) and pristine graphene quantum dots (GQDs) were utilized for optoelectronic devices. The PANI-GQD based photodetector exhibited higher responsivity which is about an order of magnitude at 405 nm and 7 folds at 532 nm as compared to GQD-based photodetectors. The improved photoresponse is attributed to the enhanced interconnection of GQD by island-like polymer matrices, which facilitate carrier transport within the polymer matrices. The optically tunable current-voltage (I-V) hysteresis of PANI-GQD was also demonstrated. The hysteresis magnifies progressively with light intensity at a scan range of +/-1 V. Both GQD and PANI-GQD devices change from positive to negative photocurrent when the bias reaches 4 V. Photogenerated carriers are excited to the trapping states in GQDs with increased bias. The trapped charges interact with charges injected from the electrodes which results in a net decrease of free charge carriers and a negative photocurrent. The photocurrent switching phenomenon in GQD and PANI-GQD devices may open up novel applications in optoelectronics.Polyaniline-functionalized graphene quantum dots (PANI-GQD) and pristine graphene quantum dots (GQDs) were utilized for optoelectronic devices. The PANI-GQD based photodetector exhibited higher responsivity which is about an order of magnitude at 405 nm and 7 folds at 532 nm as compared to GQD-based photodetectors. The improved photoresponse is attributed to the enhanced interconnection of GQD by island-like polymer matrices, which facilitate carrier transport within the polymer matrices. The optically tunable current-voltage (I-V) hysteresis of PANI-GQD was also demonstrated. The hysteresis magnifies progressively with light intensity at a scan range of +/-1 V. Both GQD and PANI-GQD devices change from positive to negative photocurrent when the bias reaches 4 V. Photogenerated carriers are excited to the trapping states in GQDs with increased bias. The trapped charges interact with charges injected from the electrodes which results in a net decrease of free charge carriers and a negative photocurrent. The photocurrent switching phenomenon in GQD and PANI-GQD devices may open up novel applications in optoelectronics. Electronic supplementary information (ESI) available: Raman spectrum of PANI-GQD, TGA, Red-shift of PL peak with the amounts of aniline, excitation dependent PL of PANI-GQD, area of hysteretic loop for different voltage scan ranges, photocurrent at 1 V under prolonged illumination. See DOI: 10.1039/c4nr07565j

Multilevel Investigation of Charge Transport in Conjugated Polymers.

PubMed

Dong, Huanli; Hu, Wenping

2016-11-15

Conjugated polymers have attracted the world's attentions since their discovery due to their great promise for optoelectronic devices. However, the fundamental understanding of charge transport in conjugated polymers remains far from clear. The origin of this challenge is the natural disorder of polymers with complex molecular structures in the solid state. Moreover, an effective way to examine the intrinsic properties of conjugated polymers is absent. Optoelectronic devices are always based on spin-coated films. In films, polymers tend to form highly disordered structures at nanometer to micrometer length scales due to the high degree of conformational freedom of macromolecular chains and the irregular interchain entanglement, thus typically resulting in much lower charge transport properties than their intrinsic performance. Furthermore, a subtle change of processing conditions may dramatically affect the film formation-inducing large variations in the morphology, crystallinity, microstructure, molecular packing, and alignment, and finally varying the effective charge transport significantly and leading to great inconsistency over an order of magnitude even for devices based on the same polymer semiconductor. Meanwhile, the charge transport mechanism in conjugated polymers is still unclear and its investigation is challenging based on such complex microstructures of polymers in films. Therefore, how to objectively evaluate the charge transport and probe the charge transport mechanism of conjugated polymers has confronted the world for decades. In this Account, we present our recent progress on multilevel charge transport in conjugated polymers, from disordered films, uniaxially aligned thin films, and single crystalline micro- or nanowires to molecular scale, where a derivative of poly(para-phenylene ethynylene) with thioacetyl end groups (TA-PPE) is selected as the candidate for investigation, which could also be extended to other conjugated polymer systems. Our systematic investigations demonstrated that 3-4 orders higher charge transport properties could be achieved with the improvement of polymer chain order and confirmed efficient charge transport along the conjugated polymer backbones. Moreover, with downscaling to molecular scale, many novel phenomena were observed such as the largely quantized electronic structure for an 18 nm-long TA-PPE and the modulation of the redox center of tetrathiafulvalene (TTF) units on tunneling charge transport, which opens the door for conjugated polymers used in nanometer quantum devices. We hope the understanding of charge transport in PPE and its related conjugated polymer at multilevel scale in this Account will provide a new method to sketch the charge transport properties of conjugated polymers, and new insights into the combination of more conjugated polymer materials in the multilevel optoelectronic and other related functional devices, which will offer great promise for the next generation of electronic devices.

SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Waveguide optoelectronic components for devices used in functional processing of digital information

NASA Astrophysics Data System (ADS)

Gladkii, V. P.; Nikitin, V. A.; Prokhorov, V. P.; Yakovenko, N. A.

1995-10-01

The results are given of technologic and circuit-engineering development of planar micro-optics components made of glasses and of lithium niobate. These components are intended for devices to be used in logic—arithmetic processing of information.

A New Regime of Nanoscale Thermal Transport: Collective Diffusion Increases Dissipation Efficiency

DTIC Science & Technology

2015-04-21

including thermal management in nanoelectronics and optoelectronics, thermoelectric devices, nanoenhanced photovoltaics , and nanoparticle-mediated...applications including thermoelectrics for energyharvesting, nanoparticle-mediated thermal therapy, nano- enhanced photovoltaics , and thermal... thermoelectric devices, nanoparticle- mediated thermal therapies, and nanoenhanced photovoltaics for improving clean-energy technologies. Author contributions

Photovoltaic cells with a graded active region achieved using stamp transfer printing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forrest, Stephen R.; Lee, Jun Yeob; Cho, Yong Joo

Disclosed herein are processes for fabricating organic photosensitive optoelectronic devices with a vertical compositionally graded organic active layer. The processes use either a single-stamp or double-stamp printing technique to transfer the vertical compositionally graded organic active layer from a starting substrate to a device layer.

Lipid Bilayer-Integrated Optoelectronic Tweezers for Nanoparticle Manipulations

DTIC Science & Technology

2013-01-01

intensities of ∼5 W/cm2 using a digital micromirror device (Texas Instruments, TX, USA). Figure 4a shows the overlapped image of the projected light...CMMI- 1120724). ■ ABBREVIATIONS ITO, indium tin oxide:; a-Si:H, hydrogenated amorphous silicon:; DMD, digital micromirror device; SLB, supported lipid

Improved Photoresponse Performance of Self-Powered ZnO/Spiro-MeOTAD Heterojunction Ultraviolet Photodetector by Piezo-Phototronic Effect.

PubMed

Shen, Yanwei; Yan, Xiaoqin; Si, Haonan; Lin, Pei; Liu, Yichong; Sun, Yihui; Zhang, Yue

2016-03-09

Strain-induced piezoelectric potential (piezopotential) within wurtzite-structured ZnO can engineer the energy-band structure at a contact or a junction and, thus, enhance the performance of corresponding optoelectronic devices by effectively tuning the charge carriers' separation and transport. Here, we report the fabrication of a flexible self-powered ZnO/Spiro-MeOTAD hybrid heterojunction ultraviolet photodetector (UV PD). The obtained device has a fast and stable response to the UV light illumination at zero bias. Together with responsivity and detectivity, the photocurrent can be increased about 1-fold upon applying a 0.753% tensile strain. The enhanced performance can be attributed to more efficient separation and transport of photogenerated electron-hole pairs, which is favored by the positive piezopotential modulated energy-band structure at the ZnO-Spiro-MeOTAD interface. This study demonstrates a promising approach to optimize the performance of a photodetector made of piezoelectric semiconductor materials through straining.

PINPIN a-Si:H based structures for X-ray image detection using the laser scanning technique

NASA Astrophysics Data System (ADS)

Fernandes, M.; Vygranenko, Y.; Vieira, M.

2015-05-01

Conventional film based X-ray imaging systems are being replaced by their digital equivalents. Different approaches are being followed by considering direct or indirect conversion, with the later technique dominating. The typical, indirect conversion, X-ray panel detector uses a phosphor for X-ray conversion coupled to a large area array of amorphous silicon based optical sensors and a couple of switching thin film transistors (TFT). The pixel information can then be readout by switching the correspondent line and column transistors, routing the signal to an external amplifier. In this work we follow an alternative approach, where the electrical switching performed by the TFT is replaced by optical scanning using a low power laser beam and a sensing/switching PINPIN structure, thus resulting in a simpler device. The optically active device is a PINPIN array, sharing both front and back electrical contacts, deposited over a glass substrate. During X-ray exposure, each sensing side photodiode collects photons generated by the scintillator screen (560 nm), charging its internal capacitance. Subsequently a laser beam (445 nm) scans the switching diodes (back side) retrieving the stored charge in a sequential way, reconstructing the image. In this paper we present recent work on the optoelectronic characterization of the PINPIN structure to be incorporated in the X-ray image sensor. The results from the optoelectronic characterization of the device and the dependence on scanning beam parameters are presented and discussed. Preliminary results of line scans are also presented.

Aluminum gallium nitride-cladding-free nonpolar m-plane gallium nitride-based laser diodes

NASA Astrophysics Data System (ADS)

Schmidt, Mathew Corey

The recent demonstration of nonpolar GaN laser diode operation along with rapid device improvements signal a paradigm shift in GaN-based optoelectronic technology. Up until now, GaN optoelectronics have been trapped on the c-plane facet, where built-in polarization fields place limitations on device design and performance. The advent of bulk GaN substrates has allowed for the full exploration of not only the nonpolar m-plane facet, but all crystal orientations of GaN. This dissertation focuses on the development of some of the world's first nonpolar m-plane GaN laser diodes as well as on the AlGaN-cladding-free concept invented at UCSB. The absence of built-in electric fields allows for thicker quantum wells (≥8 nm) than those allowed on c-plane which improves the optical waveguiding characteristics and eliminates the need for AlGaN cladding layers. The benefits of this design include more uniform growth, more reproducible growth, no tensile cracking, lower operating voltages and currents, and higher yields. The first iteration of device design optimization is presented. Design and growth aspects investigated include quantum well number, quantum well thickness, Mg doping of the p-GaN cladding, aluminum composition of the AlGaN cladding layer and the implementation of an InGaN separate confined heterostructure. These optimizations led to threshold current densities as low as 2.4 kA/cm2.

Recent advances in large-scale assembly of semiconducting inorganic nanowires and nanofibers for electronics, sensors and photovoltaics.

PubMed

Long, Yun-Ze; Yu, Miao; Sun, Bin; Gu, Chang-Zhi; Fan, Zhiyong

2012-06-21

Semiconducting inorganic nanowires (NWs), nanotubes and nanofibers have been extensively explored in recent years as potential building blocks for nanoscale electronics, optoelectronics, chemical/biological/optical sensing, and energy harvesting, storage and conversion, etc. Besides the top-down approaches such as conventional lithography technologies, nanowires are commonly grown by the bottom-up approaches such as solution growth, template-guided synthesis, and vapor-liquid-solid process at a relatively low cost. Superior performance has been demonstrated using nanowires devices. However, most of the nanowire devices are limited to the demonstration of single devices, an initial step toward nanoelectronic circuits, not adequate for production on a large scale at low cost. Controlled and uniform assembly of nanowires with high scalability is still one of the major bottleneck challenges towards the materials and device integration for electronics. In this review, we aim to present recent progress toward nanowire device assembly technologies, including flow-assisted alignment, Langmuir-Blodgett assembly, bubble-blown technique, electric/magnetic- field-directed assembly, contact/roll printing, planar growth, bridging method, and electrospinning, etc. And their applications in high-performance, flexible electronics, sensors, photovoltaics, bioelectronic interfaces and nano-resonators are also presented.

Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors.

PubMed

Reig, Marta; Bagdziunas, Gintautas; Ramanavicius, Arunas; Puigdollers, Joaquim; Velasco, Dolores

2018-06-21

Inspired by the excellent device performance of triindole-based semiconductors in electronic and optoelectronic devices, the relationship between the solid-state organization and the charge-transporting properties of an easily accessible series of triindole derivatives is reported herein. The vacuum-evaporated organic thin-film transistors (OTFTs) exhibited a non ideal behaviour with a double slope in the saturation curves. Moreover, the treatment of the gate insulator of the OTFT device with either a self-assembled monolayer (SAM) or a polymer controls the molecular growth and the film morphology of the semiconducting layer, as shown by X-ray diffraction (XRD) analyses, atomic force microscopy (AFM) and theoretical calculations. N-Trihexyltriindole exhibited the best device performance with hole mobilities up to 0.1 cm2 V-1 s-1 at the low VG range and up to 0.01 cm2 V-1 s-1 at high VG, as well as enhanced Ion/Ioff ratios of around 106. The results suggest that the non-ideal behaviour of the here studied OTFT devices could be related to the higher interfacial disorder in comparison to that in the bulk.

Study on optoelectronic properties of Spiro-CN for developing an efficient OLED

NASA Astrophysics Data System (ADS)

Mishra, Ashok Kumar

2018-05-01

There are a class of organic molecules and polymers which exhibit semiconductor behavior because of nearly free conjugate π-electrons. Hopping of these electrons in molecules forms different excited singlet and triplet states named as excitons. Some of these organic molecules can be set to emit photons by triplet-singlet excitonic transition via a process called Thermally Activated Delayed Fluorescence (TADF) which is exploited for designing the Organic Light Emitting diode (OLED.) Spiro-CN (spirobifluorene skeletons) Spiro is one of these reported noble metal-free TADF molecules which offers unique optical and electronic properties arising from the efficient transition and reverse intersystem crossing between the lowest singlet (S) and triplet (T) excited states. Its ability to harvest triplet excitons for fluorescence through facilitated reverse intersystem crossing (T→S) could directly impact their properties and performances, which is attractive for a wide variety of low-cost optoelectronic device. In the present study, the Spiro-CN compounds have been taken up for the investigation of various optoelectronic properties including the thermally activated delayed fluorescence (TADF) by using the Koopmans Method and Density Functional Theory. The present study discusses the utility of the Spiro-CN organic semiconductor as a suitable TADF material essential for developing an efficient Organic Light Emitting Diode (OLED).

PREFACE: Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II (Symposium K, E-MRS 2009 Spring Meeting)

NASA Astrophysics Data System (ADS)

Nötzel, Richard

2009-07-01

This volume of IOP Conference Series: Materials Science and Engineering contains papers that were presented at the special symposium K at the EMRS 2009 Spring Meeting held 8-12 June in Strasbourg, France, which was entitled 'Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II'. Thanks to the broad interest a large variety of quantum dots and quantum wires and related nanostructures and their application in devices could be covered. There was significant progress in the epitaxial growth of semiconductor quantum dots seen in the operation of high-power, as well as mode locked laser diodes and the lateral positioning of quantum dots on patterned substrates or by selective area growth for future single quantum dot based optoelectronic and electronic devices. In the field of semiconductor nanowires high quality, almost twin free structures are now available together with a new degree of freedom for band structure engineering based on alternation of the crystal structure. In the search for Si based light emitting structures, nanocrystals and miniband-related near infrared luminescence of Si/Ge quantum dot superlattices with high quantum efficiency were reported. These highlights, among others, and the engaged discussions of the scientists, engineers and students brought together at the symposium emphasize how active the field of semiconductor nanostructures and their applications in devices is, so that we can look forward to the progress to come. Guest Editor Richard Nötzel COBRA Research Institute Department of Applied Physics Eindhoven University of Technology 5600 MB Eindhoven The Netherlands Tel.: +31 40 247 2047; fax: +31 40 246 1339 E-mail address: r.noetzel@tue.nl

Electrically excited hot-electron dominated fluorescent emitters using individual Ga-doped ZnO microwires via metal quasiparticle film decoration.

PubMed

Liu, Yang; Jiang, Mingming; Zhang, Zhenzhong; Li, Binghui; Zhao, Haifeng; Shan, Chongxin; Shen, Dezhen

2018-03-28

The generation of hot electrons from metal nanostructures through plasmon decay provided a direct interfacial charge transfer mechanism, which no longer suffers from the barrier height restrictions observed for metal/semiconductor interfaces. Metal plasmon-mediated energy conversion with higher efficiency has been proposed as a promising alternative to construct novel optoelectronic devices, such as photodetectors, photovoltaic and photocatalytic devices, etc. However, the realization of the electrically-driven generation of hot electrons, and the application in light-emitting devices remain big challenges. Here, hybrid architectures comprising individual Ga-doped ZnO (ZnO:Ga) microwires via metal quasiparticle film decoration were fabricated. The hottest spots could be formed towards the center of the wires, and the quasiparticle films were converted into physically isolated nanoparticles by applying a bias onto the wires. Thus, the hot electrons became spatially localized towards the hottest regions, leading to a release of energy in the form of emitting photons. By adjusting the sputtering times and appropriate alloys, such as Au and Ag, wavelength-tunable emissions could be achieved. To exploit the EL emission characteristics, metal plasmons could be used as active elements to mediate the generation of hot electrons from metal nanostructures, which are located in the light-emitting regions, followed by injection into ZnO:Ga microwire-channels; thus, the production of plasmon decay-induced hot-electrons could function as an efficient approach to dominate emission wavelengths. Therefore, by introducing metal nanostructure decoration, individual ZnO:Ga microwires can be used to construct wavelength-tunable fluorescent emitters. The hybrid architectures of metal-ZnO micro/nanostructures offer a fantastic candidate to broaden the potential applications of semiconducting optoelectronic devices, such as photovoltaic devices, photodetectors, optoelectronic sensors, etc.

Battery-free, stretchable optoelectronic systems for wireless optical characterization of the skin

PubMed Central

Kim, Jeonghyun; Salvatore, Giovanni A.; Araki, Hitoshi; Chiarelli, Antonio M.; Xie, Zhaoqian; Banks, Anthony; Sheng, Xing; Liu, Yuhao; Lee, Jung Woo; Jang, Kyung-In; Heo, Seung Yun; Cho, Kyoungyeon; Luo, Hongying; Zimmerman, Benjamin; Kim, Joonhee; Yan, Lingqing; Feng, Xue; Xu, Sheng; Fabiani, Monica; Gratton, Gabriele; Huang, Yonggang; Paik, Ungyu; Rogers, John A.

2016-01-01

Recent advances in materials, mechanics, and electronic device design are rapidly establishing the foundations for health monitoring technologies that have “skin-like” properties, with options in chronic (weeks) integration with the epidermis. The resulting capabilities in physiological sensing greatly exceed those possible with conventional hard electronic systems, such as those found in wrist-mounted wearables, because of the intimate skin interface. However, most examples of such emerging classes of devices require batteries and/or hard-wired connections to enable operation. The work reported here introduces active optoelectronic systems that function without batteries and in an entirely wireless mode, with examples in thin, stretchable platforms designed for multiwavelength optical characterization of the skin. Magnetic inductive coupling and near-field communication (NFC) schemes deliver power to multicolored light-emitting diodes and extract digital data from integrated photodetectors in ways that are compatible with standard NFC-enabled platforms, such as smartphones and tablet computers. Examples in the monitoring of heart rate and temporal dynamics of arterial blood flow, in quantifying tissue oxygenation and ultraviolet dosimetry, and in performing four-color spectroscopic evaluation of the skin demonstrate the versatility of these concepts. The results have potential relevance in both hospital care and at-home diagnostics. PMID:27493994

Self-Healing Thermal Annealing: Surface Morphological Restructuring Control of GaN Nanorods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Conroy, Michele; Li, Haoning; Zubialevich, Vitaly Z.

With advances in nanolithography and dry etching, top-down methods of nanostructuring have become a widely used tool for improving the efficiency of optoelectronics. These nano dimensions can offer various benefits to the device performance in terms of light extraction and efficiency, but often at the expense of emission color quality. Broadening of the target emission peak and unwanted yellow luminescence are characteristic defect-related effects due to the ion beam etching damage, particularly for III–N based materials. In this article we focus on GaN based nanorods, showing that through thermal annealing the surface roughness and deformities of the crystal structure canmore » be “self-healed”. Correlative electron microscopy and atomic force microscopy show the change from spherical nanorods to faceted hexagonal structures, revealing the temperature-dependent surface morphology faceting evolution. The faceted nanorods were shown to be strain- and defect-free by cathodoluminescence hyperspectral imaging, micro-Raman, and transmission electron microscopy (TEM). In-situ TEM thermal annealing experiments allowed for real time observation of dislocation movements and surface restructuring observed in ex-situ annealing TEM sampling. This thermal annealing investigation gives new insight into the redistribution path of GaN material and dislocation movement post growth, allowing for improved understanding and in turn advances in optoelectronic device processing of compound semiconductors.« less

Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate

NASA Astrophysics Data System (ADS)

Utrilla, Antonio D.; Grossi, Davide F.; Reyes, Daniel F.; Gonzalo, Alicia; Braza, Verónica; Ben, Teresa; González, David; Guzman, Alvaro; Hierro, Adrian; Koenraad, Paul M.; Ulloa, Jose M.

2018-06-01

The practical realization of epitaxial quantum dot (QD) nanocrystals led before long to impressive experimental advances in optoelectronic devices, as well as to the emergence of new technological fields. However, the necessary capping process is well-known to hinder a precise control of the QD morphology and therefore of the possible electronic structure required for certain applications. A straightforward approach is shown to tune the structural and optical properties of InAs/GaAs QDs without the need for any capping material different from GaAs or annealing process. The mere adjust of the capping rate allows controlling kinetically the QD dissolution process induced by the surface In-Ga intermixing taking place during overgrowth, determining the final metastable structure. While low capping rates make QDs evolve into more thermodynamically favorable quantum ring structures, increasing capping rates help preserve the QD height and shape, simultaneously improving the luminescence properties. Indeed, a linear relationship between capping rate and QD height is found, resulting in a complete preservation of the original QD geometry for rates above ∼2.0 ML s-1. In addition, the inhibition of In diffusion from the QDs top to the areas in between them yields thinner WLs, what could improve the performance of several QD-based optoelectronic devices.

Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling

NASA Astrophysics Data System (ADS)

Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin

2011-12-01

Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (<10 nm) in electrical characterization3 that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission4,5, we developed a numerical model for the tip-sample Schottky contact4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).

Broadband enhancement of photoluminance from colloidal metal halide perovskite nanocrystals on plasmonic nanostructured surfaces.

PubMed

Zhang, Si; Liang, Yuzhang; Jing, Qiang; Lu, Zhenda; Lu, Yanqing; Xu, Ting

2017-11-07

Metal halide perovskite nanocrystals (NCs) as a new kind of promising optoelectronic material have attracted wide attention due to their high photoluminescence (PL) quantum yield, narrow emission linewidth and wideband color tunability. Since the PL intensity always has a direct influence on the performance of optoelectronic devices, it is of vital importance to improve the perovskite NCs' fluorescence emission efficiency. Here, we synthesize three inorganic perovskite NCs and experimentally demonstrate a broadband fluorescence enhancement of perovskite NCs by exploiting plasmonic nanostructured surface consisting of nanogrooves array. The strong near-field optical localization associated with surface plasmon polariton-coupled emission effect generated by the nanogrooves array can significantly boost the absorption of perovskite NCs and tailor the fluorescence emissions. As a result, the PL intensities of perovskite NCs are broadband enhanced with a maximum factor higher than 8-fold achieved in experimental demonstration. Moreover, the high efficiency PL of perovskite NCs embedded in the polymer matrix layer on the top of plasmonic nanostructured surface can be maintained for more than three weeks. These results imply that plasmonic nanostructured surface is a good candidate to stably broadband enhance the PL intensity of perovskite NCs and further promote their potentials in the application of visible-light-emitting devices.

Theory study on the bandgap of antimonide-based multi-element alloys

NASA Astrophysics Data System (ADS)

An, Ning; Liu, Cheng-Zhi; Fan, Cun-Bo; Dong, Xue; Song, Qing-Li

2017-05-01

In order to meet the design requirements of the high-performance antimonide-based optoelectronic devices, the spin-orbit splitting correction method for bandgaps of Sb-based multi-element alloys is proposed. Based on the analysis of band structure, a correction factor is introduced in the InxGa1-xAsySb1-y bandgaps calculation with taking into account the spin-orbit coupling sufficiently. In addition, the InxGa1-xAsySb1-y films with different compositions are grown on GaSb substrates by molecular beam epitaxy (MBE), and the corresponding bandgaps are obtained by photoluminescence (PL) to test the accuracy and reliability of this new method. The results show that the calculated values agree fairly well with the experimental results. To further verify this new method, the bandgaps of a series of experimental samples reported before are calculated. The error rate analysis reveals that the α of spin-orbit splitting correction method is decreased to 2%, almost one order of magnitude smaller than the common method. It means this new method can calculate the antimonide multi-element more accurately and has the merit of wide applicability. This work can give a reasonable interpretation for the reported results and beneficial to tailor the antimonides properties and optoelectronic devices.

Release strategies for making transferable semiconductor structures, devices and device components

DOEpatents

Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

2014-11-25

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.