Achieving 12.8% Efficiency by Simultaneously Improving Open-Circuit Voltage and Short-Circuit Current Density in Tandem Organic Solar Cells.

PubMed

Qin, Yunpeng; Chen, Yu; Cui, Yong; Zhang, Shaoqing; Yao, Huifeng; Huang, Jiang; Li, Wanning; Zheng, Zhong; Hou, Jianhui

2017-06-01

Tandem organic solar cells (TOSCs), which integrate multiple organic photovoltaic layers with complementary absorption in series, have been proved to be a strong contender in organic photovoltaic depending on their advantages in harvesting a greater part of the solar spectrum and more efficient photon utilization than traditional single-junction organic solar cells. However, simultaneously improving open circuit voltage (V oc ) and short current density (J sc ) is a still particularly tricky issue for highly efficient TOSCs. In this work, by employing the low-bandgap nonfullerene acceptor, IEICO, into the rear cell to extend absorption, and meanwhile introducing PBDD4T-2F into the front cell for improving V oc , an impressive efficiency of 12.8% has been achieved in well-designed TOSC. This result is also one of the highest efficiencies reported in state-of-the-art organic solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

PubMed Central

Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

2017-01-01

Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design. PMID:28145438

Organic transistors manufactured using inkjet technology with subfemtoliter accuracy

PubMed Central

Sekitani, Tsuyoshi; Noguchi, Yoshiaki; Zschieschang, Ute; Klauk, Hagen; Someya, Takao

2008-01-01

A major obstacle to the development of organic transistors for large-area sensor, display, and circuit applications is the fundamental compromise between manufacturing efficiency, transistor performance, and power consumption. In the past, improving the manufacturing efficiency through the use of printing techniques has inevitably resulted in significantly lower performance and increased power consumption, while attempts to improve performance or reduce power have led to higher process temperatures and increased manufacturing cost. Here, we lift this fundamental limitation by demonstrating subfemtoliter inkjet printing to define metal contacts with single-micrometer resolution on the surface of high-mobility organic semiconductors to create high-performance p-channel and n-channel transistors and low-power complementary circuits. The transistors employ an ultrathin low-temperature gate dielectric based on a self-assembled monolayer that allows transistors and circuits on rigid and flexible substrates to operate with very low voltages. PMID:18362348

Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor.

PubMed

Campos, Antonio; Riera-Galindo, Sergi; Puigdollers, Joaquim; Mas-Torrent, Marta

2018-05-09

Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

PubMed

Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

2011-08-01

Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) < 70 nA when I(on) > 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

Organic-on-silicon complementary metal-oxide-semiconductor colour image sensors.

PubMed

Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

2015-01-12

Complementary metal-oxide-semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor.

Organic-on-silicon complementary metal–oxide–semiconductor colour image sensors

PubMed Central

Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

2015-01-01

Complementary metal–oxide–semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor. PMID:25578322

A photonic circuit for complementary frequency shifting, in-phase quadrature/single sideband modulation and frequency multiplication: analysis and integration feasibility

NASA Astrophysics Data System (ADS)

Hasan, Mehedi; Hu, Jianqi; Nikkhah, Hamdam; Hall, Trevor

2017-08-01

A novel photonic integrated circuit architecture for implementing orthogonal frequency division multiplexing by means of photonic generation of phase-correlated sub-carriers is proposed. The circuit can also be used for implementing complex modulation, frequency up-conversion of the electrical signal to the optical domain and frequency multiplication. The principles of operation of the circuit are expounded using transmission matrices and the predictions of the analysis are verified by computer simulation using an industry-standard software tool. Non-ideal scenarios that may affect the correct function of the circuit are taken into consideration and quantified. The discussion of integration feasibility is illustrated by a photonic integrated circuit that has been fabricated using 'library' components and which features most of the elements of the proposed circuit architecture. The circuit is found to be practical and may be fabricated in any material platform that offers a linear electro-optic modulator such as organic or ferroelectric thin films hybridized with silicon photonics.

Average output polarization dataset for signifying the temperature influence for QCA designed reversible logic circuits.

PubMed

Abdullah-Al-Shafi, Md; Bahar, Ali Newaz; Bhuiyan, Mohammad Maksudur Rahman; Shamim, S M; Ahmed, Kawser

2018-08-01

Quantum-dot cellular automata (QCA) as nanotechnology is a pledging contestant that has incredible prospective to substitute complementary metal-oxide-semiconductor (CMOS) because of its superior structures such as intensely high device thickness, minimal power depletion with rapid operation momentum. In this study, the dataset of average output polarization (AOP) for fundamental reversible logic circuits is organized as presented in (Abdullah-Al-Shafi and Bahar, 2017; Bahar et al., 2016; Abdullah-Al-Shafi et al., 2015; Abdullah-Al-Shafi, 2016) [1-4]. QCADesigner version 2.0.3 has been utilized to survey the AOP of reversible circuits at separate temperature point in Kelvin (K) unit.

A modeling framework for deriving the structural and functional architecture of a short-term memory microcircuit.

PubMed

Fisher, Dimitry; Olasagasti, Itsaso; Tank, David W; Aksay, Emre R F; Goldman, Mark S

2013-09-04

Although many studies have identified neural correlates of memory, relatively little is known about the circuit properties connecting single-neuron physiology to behavior. Here we developed a modeling framework to bridge this gap and identify circuit interactions capable of maintaining short-term memory. Unlike typical studies that construct a phenomenological model and test whether it reproduces select aspects of neuronal data, we directly fit the synaptic connectivity of an oculomotor memory circuit to a broad range of anatomical, electrophysiological, and behavioral data. Simultaneous fits to all data, combined with sensitivity analyses, revealed complementary roles of synaptic and neuronal recruitment thresholds in providing the nonlinear interactions required to generate the observed circuit behavior. This work provides a methodology for identifying the cellular and synaptic mechanisms underlying short-term memory and demonstrates how the anatomical structure of a circuit may belie its functional organization. Copyright © 2013 Elsevier Inc. All rights reserved.

Development of chip passivated monolithic complementary MISFET circuits with beam leads

NASA Technical Reports Server (NTRS)

Ragonese, L. J.; Kim, M. J.; Corrie, B. L.; Brouillette, J. W.; Warr, R. E.

1972-01-01

The results are presented of a program to demonstrate the processes for fabricating complementary MISFET beam-leaded circuits, which, potentially, are comparable in quality to available bipolar beam-lead chips that use silicon nitride passivation in conjunction with a platinum-titanium-gold metal system. Materials and techniques, different from the bipolar case, were used in order to be more compatible with the special requirements of fully passivated complementary MISFET devices. Two types of circuits were designed and fabricated, a D-flip-flop and a three-input NOR/NAND gate. Fifty beam-leaded chips of each type were constructed. A quality and reliability assurance program was performed to identify failure mechanisms. Sample tests and inspections (including destructive) were developed to measure the physical characteristics of the circuits.

Three-Dimensional, Inkjet-Printed Organic Transistors and Integrated Circuits with 100% Yield, High Uniformity, and Long-Term Stability.

PubMed

Kwon, Jimin; Takeda, Yasunori; Fukuda, Kenjiro; Cho, Kilwon; Tokito, Shizuo; Jung, Sungjune

2016-11-22

In this paper, we demonstrate three-dimensional (3D) integrated circuits (ICs) based on a 3D complementary organic field-effect transistor (3D-COFET). The transistor-on-transistor structure was achieved by vertically stacking a p-type OFET over an n-type OFET with a shared gate joining the two transistors, effectively halving the footprint of printed transistors. All the functional layers including organic semiconductors, source/drain/gate electrodes, and interconnection paths were fully inkjet-printed except a parylene dielectric which was deposited by chemical vapor deposition. An array of printed 3D-COFETs and their inverter logic gates comprising over 100 transistors showed 100% yield, and the uniformity and long-term stability of the device were also investigated. A full-adder circuit, the most basic computing unit, has been successfully demonstrated using nine NAND gates based on the 3D structure. The present study fulfills the essential requirements for the fabrication of organic printed complex ICs (increased transistor density, 100% yield, high uniformity, and long-term stability), and the findings can be applied to realize more complex digital/analogue ICs and intelligent devices.

Rylene and related diimides for organic electronics.

PubMed

Zhan, Xiaowei; Facchetti, Antonio; Barlow, Stephen; Marks, Tobin J; Ratner, Mark A; Wasielewski, Michael R; Marder, Seth R

2011-01-11

Organic electron-transporting materials are essential for the fabrication of organic p-n junctions, photovoltaic cells, n-channel field-effect transistors, and complementary logic circuits. Rylene diimides are a robust, versatile class of polycyclic aromatic electron-transport materials with excellent thermal and oxidative stability, high electron affinities, and, in many cases, high electron mobilities; they are, therefore, promising candidates for a variety of organic electronics applications. In this review, recent developments in the area of high-electron-mobility diimides based on rylenes and related aromatic cores, particularly perylene- and naphthalene-diimide-based small molecules and polymers, for application in high-performance organic field-effect transistors and photovoltaic cells are summarized and analyzed.

CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review.

PubMed

Li, Haitao; Liu, Xiaowen; Li, Lin; Mu, Xiaoyi; Genov, Roman; Mason, Andrew J

2016-12-31

Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS) instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design.

CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review

PubMed Central

Li, Haitao; Liu, Xiaowen; Li, Lin; Mu, Xiaoyi; Genov, Roman; Mason, Andrew J.

2016-01-01

Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS) instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design. PMID:28042860

Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits.

PubMed

Larentis, Stefano; Fallahazad, Babak; Movva, Hema C P; Kim, Kyounghwan; Rai, Amritesh; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K; Tutuc, Emanuel

2017-05-23

Transition metal dichalcogenides are of interest for next generation switches, but the lack of low resistance electron and hole contacts in the same material has hindered the development of complementary field-effect transistors and circuits. We demonstrate an air-stable, reconfigurable, complementary monolayer MoTe 2 field-effect transistor encapsulated in hexagonal boron nitride, using electrostatically doped contacts. The introduction of a multigate design with prepatterned bottom contacts allows us to independently achieve low contact resistance and threshold voltage tuning, while also decoupling the Schottky contacts and channel gating. We illustrate a complementary inverter and a p-i-n diode as potential applications.

8.4% efficient fullerene-free organic solar cells exploiting long-range exciton energy transfer.

PubMed

Cnops, Kjell; Rand, Barry P; Cheyns, David; Verreet, Bregt; Empl, Max A; Heremans, Paul

2014-03-07

In order to increase the power conversion efficiency of organic solar cells, their absorption spectrum should be broadened while maintaining efficient exciton harvesting. This requires the use of multiple complementary absorbers, usually incorporated in tandem cells or in cascaded exciton-dissociating heterojunctions. Here we present a simple three-layer architecture comprising two non-fullerene acceptors and a donor, in which an energy-relay cascade enables an efficient two-step exciton dissociation process. Excitons generated in the remote wide-bandgap acceptor are transferred by long-range Förster energy transfer to the smaller-bandgap acceptor, and subsequently dissociate at the donor interface. The photocurrent originates from all three complementary absorbing materials, resulting in a quantum efficiency above 75% between 400 and 720 nm. With an open-circuit voltage close to 1 V, this leads to a remarkable power conversion efficiency of 8.4%. These results confirm that multilayer cascade structures are a promising alternative to conventional donor-fullerene organic solar cells.

Doping Polymer Semiconductors by Organic Salts: Toward High-Performance Solution-Processed Organic Field-Effect Transistors.

PubMed

Hu, Yuanyuan; Rengert, Zachary D; McDowell, Caitlin; Ford, Michael J; Wang, Ming; Karki, Akchheta; Lill, Alexander T; Bazan, Guillermo C; Nguyen, Thuc-Quyen

2018-04-24

Solution-processed organic field-effect transistors (OFETs) were fabricated with the addition of an organic salt, trityl tetrakis(pentafluorophenyl)borate (TrTPFB), into thin films of donor-acceptor copolymer semiconductors. The performance of OFETs is significantly enhanced after the organic salt is incorporated. TrTPFB is confirmed to p-dope the organic semiconductors used in this study, and the doping efficiency as well as doping physics was investigated. In addition, systematic electrical and structural characterizations reveal how the doping enhances the performance of OFETs. Furthermore, it is shown that this organic salt doping method is feasible for both p- and n-doping by using different organic salts and, thus, can be utilized to achieve high-performance OFETs and organic complementary circuits.

Radiation damage in MOS integrated circuits, Part 1

NASA Technical Reports Server (NTRS)

Danchenko, V.

1971-01-01

Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were investigated for sensitivity to radiation environment. The circuits were irradiated with 1.5 MeV electrons. The results are given for electrons and for the Co-60 gamma radiation equivalent. The data are presented in terms of shifts in the threshold potentials and changes in transconductances and leakages. Gate biases of -10V, +10V and zero volts were applied to individual MOS units during irradiation. It was found that, in most of circuits of complementary MOS technologies, noticable changes due to radiation appear first as increased leakage in n-channel MOSFETs somewhat before a total integrated dose 10 to the 12th power electrons/sg cm is reached. The inability of p-channel MOSFETs to turn on sets in at about 10 to the 13th power electrons/sq cm. Of the circuits tested, an RCA A-series circuit was the most radiation resistant sample.

Comparison of conductor and dielectric inks in printed organic complementary transistors

NASA Astrophysics Data System (ADS)

Ng, Tse Nga; Mei, Ping; Whiting, Gregory L.; Schwartz, David E.; Abraham, Biby; Wu, Yiliang; Veres, Janos

2014-10-01

Two types of printable conductor and a bilayer gate dielectric are evaluated for use in all-additive, inkjetprinted complementary OTFTs. The Ag nanoparticle ink based on nonpolar alkyl amine surfactant or stabilizer enables good charge injection into p-channel devices, but this ink also leaves residual stabilizer that modifies the transistor backchannel and shifts the turn-on voltage to negative values. The Ag ink based on polar solvent requires dopant modification to improve charge injection to p-channel devices, but this ink allows the OTFT turn-on voltage to be close to 0 V. The reverse trend is observed for n-channel OTFTs. For gate insulator, a bilayer dielectric is demonstrated that combines the advantages of two types of insulator materials, in which a fluoropolymer reduces dipolar disorder at the semiconductor-dielectric interface, while a high-k PVDF terpolymer dielectric facilitates high gate capacitance. The dielectric is incorporated into an inverter and a three-stage ring oscillator, and the resulting circuits were demonstrated to operate at a supply voltage as low as 2 V, with bias stress levels comparable to circuits with other types of dielectrics.

11.4% Efficiency non-fullerene polymer solar cells with trialkylsilyl substituted 2D-conjugated polymer as donor

PubMed Central

Bin, Haijun; Gao, Liang; Zhang, Zhi-Guo; Yang, Yankang; Zhang, Yindong; Zhang, Chunfeng; Chen, Shanshan; Xue, Lingwei; Yang, Changduk; Xiao, Min; Li, Yongfang

2016-01-01

Simutaneously high open circuit voltage and high short circuit current density is a big challenge for achieving high efficiency polymer solar cells due to the excitonic nature of organic semdonductors. Herein, we developed a trialkylsilyl substituted 2D-conjugated polymer with the highest occupied molecular orbital level down-shifted by Si–C bond interaction. The polymer solar cells obtained by pairing this polymer with a non-fullerene acceptor demonstrated a high power conversion efficiency of 11.41% with both high open circuit voltage of 0.94 V and high short circuit current density of 17.32 mA cm−2 benefitted from the complementary absorption of the donor and acceptor, and the high hole transfer efficiency from acceptor to donor although the highest occupied molecular orbital level difference between the donor and acceptor is only 0.11 eV. The results indicate that the alkylsilyl substitution is an effective way in designing high performance conjugated polymer photovoltaic materials. PMID:27905397

11.4% Efficiency non-fullerene polymer solar cells with trialkylsilyl substituted 2D-conjugated polymer as donor.

PubMed

Bin, Haijun; Gao, Liang; Zhang, Zhi-Guo; Yang, Yankang; Zhang, Yindong; Zhang, Chunfeng; Chen, Shanshan; Xue, Lingwei; Yang, Changduk; Xiao, Min; Li, Yongfang

2016-12-01

Simutaneously high open circuit voltage and high short circuit current density is a big challenge for achieving high efficiency polymer solar cells due to the excitonic nature of organic semdonductors. Herein, we developed a trialkylsilyl substituted 2D-conjugated polymer with the highest occupied molecular orbital level down-shifted by Si-C bond interaction. The polymer solar cells obtained by pairing this polymer with a non-fullerene acceptor demonstrated a high power conversion efficiency of 11.41% with both high open circuit voltage of 0.94 V and high short circuit current density of 17.32 mA cm -2 benefitted from the complementary absorption of the donor and acceptor, and the high hole transfer efficiency from acceptor to donor although the highest occupied molecular orbital level difference between the donor and acceptor is only 0.11 eV. The results indicate that the alkylsilyl substitution is an effective way in designing high performance conjugated polymer photovoltaic materials.

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2006-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

NASA Technical Reports Server (NTRS)

Bouldin, D. L.; Eastes, R. W.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

1979-01-01

The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it; Barra, M.; Ciccullo, F.

In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system

NASA Astrophysics Data System (ADS)

Liu, Yang; Wang, Sheng; Liu, Huaping; Peng, Lian-Mao

2017-06-01

Single material-based monolithic optoelectronic integration with complementary metal oxide semiconductor-compatible signal processing circuits is one of the most pursued approaches in the post-Moore era to realize rapid data communication and functional diversification in a limited three-dimensional space. Here, we report an electrically driven carbon nanotube-based on-chip three-dimensional optoelectronic integrated circuit. We demonstrate that photovoltaic receivers, electrically driven transmitters and on-chip electronic circuits can all be fabricated using carbon nanotubes via a complementary metal oxide semiconductor-compatible low-temperature process, providing a seamless integration platform for realizing monolithic three-dimensional optoelectronic integrated circuits with diversified functionality such as the heterogeneous AND gates. These circuits can be vertically scaled down to sub-30 nm and operates in photovoltaic mode at room temperature. Parallel optical communication between functional layers, for example, bottom-layer digital circuits and top-layer memory, has been demonstrated by mapping data using a 2 × 2 transmitter/receiver array, which could be extended as the next generation energy-efficient signal processing paradigm.

CMOS-based carbon nanotube pass-transistor logic integrated circuits

PubMed Central

Ding, Li; Zhang, Zhiyong; Liang, Shibo; Pei, Tian; Wang, Sheng; Li, Yan; Zhou, Weiwei; Liu, Jie; Peng, Lian-Mao

2012-01-01

Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration. PMID:22334080

A molybdenum disulfide/carbon nanotube heterogeneous complementary inverter.

PubMed

Huang, Jun; Somu, Sivasubramanian; Busnaina, Ahmed

2012-08-24

We report a simple, bottom-up/top-down approach for integrating drastically different nanoscale building blocks to form a heterogeneous complementary inverter circuit based on layered molybdenum disulfide and carbon nanotube (CNT) bundles. The fabricated CNT/MoS(2) inverter is composed of n-type molybdenum disulfide (MOS(2)) and p-type CNT transistors, with a high voltage gain of 1.3. The CNT channels are fabricated using directed assembly while the layered molybdenum disulfide channels are fabricated by mechanical exfoliation. This bottom-up fabrication approach for integrating various nanoscale elements with unique characteristics provides an alternative cost-effective methodology to complementary metal-oxide-semiconductors, laying the foundation for the realization of high performance logic circuits.

Postirradiation Effects In Integrated Circuits

NASA Technical Reports Server (NTRS)

Shaw, David C.; Barnes, Charles E.

1993-01-01

Two reports discuss postirradiation effects in integrated circuits. Presents examples of postirradiation measurements of performances of integrated circuits of five different types: dual complementary metal oxide/semiconductor (CMOS) flip-flop; CMOS analog multiplier; two CMOS multiplying digital-to-analog converters; electrically erasable programmable read-only memory; and semiconductor/oxide/semiconductor octal buffer driver.

Ternary Blend Composed of Two Organic Donors and One Acceptor for Active Layer of High-Performance Organic Solar Cells.

PubMed

Lee, Jong Won; Choi, Yoon Suk; Ahn, Hyungju; Jo, Won Ho

2016-05-04

Ternary blends composed of two donor absorbers with complementary absorptions provide an opportunity to enhance the short-circuit current and thus the power conversion efficiency (PCE) of organic solar cells. In addition to complementary absorption of two donors, ternary blends may exhibit favorable morphology for high-performance solar cells when one chooses properly the donor pair. For this purpose, we develop a ternary blend with two donors (diketopyrrolopyrrole-based polymer (PTDPP2T) and small molecule ((TDPP)2Ph)) and one acceptor (PC71BM). The solar cell made of a ternary blend with 10 wt % (TDPP)2Ph exhibits higher PCE of 7.49% as compared with the solar cells with binary blends, PTDPP2T:PC71BM (6.58%) and (TDPP)2Ph:PC71BM (3.21%). The higher PCE of the ternary blend solar cell is attributed mainly to complementary absorption of two donors. However, a further increase in (TDPP)2Ph content in the ternary blend (>10 wt %) decreases the PCE. The ternary blend with 10 wt % (TDPP)2Ph exhibits well-developed morphology with narrow-sized fibrils while the blend with 15 wt % (TDPP)2Ph shows phase separation with large-sized domains, demonstrating that the phase morphology and compatibility of ternary blend are important factors to achieve a high-performance solar cell made of ternary blends.

High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

PubMed

Song, Yong-Ha; Ahn, Sang-Joon Kenny; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi-Sun; Pi, Jae-Eun; Ko, Seung-Deok; Choi, Kwang-Wook; Park, Sang-Hee Ko; Yoon, Jun-Bo

2015-03-25

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

An organic water-gated ambipolar transistor with a bulk heterojunction active layer for stable and tunable photodetection

NASA Astrophysics Data System (ADS)

Xu, Haihua; Zhu, Qingqing; Wu, Tongyuan; Chen, Wenwen; Zhou, Guodong; Li, Jun; Zhang, Huisheng; Zhao, Ni

2016-11-01

Organic water-gated transistors (OWGTs) have emerged as promising sensing architectures for biomedical applications and environmental monitoring due to their ability of in-situ detection of biological substances with high sensitivity and low operation voltage, as well as compatibility with various read-out circuits. Tremendous progress has been made in the development of p-type OWGTs. However, achieving stable n-type operation in OWGTs due to the presence of solvated oxygen in water is still challenging. Here, we report an ambipolar OWGT based on a bulk heterojunction active layer, which exhibits a stable hole and electron transport when exposed to aqueous environment. The device can be used as a photodetector both in the hole and electron accumulation regions to yield a maximum responsivity of 0.87 A W-1. More importantly, the device exhibited stable static and dynamic photodetection even when operated in the n-type mode. These findings bring possibilities for the device to be adopted for future biosensing platforms, which are fully compatible with low-cost and low-power organic complementary circuits.

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

PubMed

Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin

2017-03-21

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

PubMed Central

Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin

2017-01-01

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm2/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm2/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics. PMID:28772679

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

1995-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2004-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2000-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Dynamic and Tunable Threshold Voltage in Organic Electrochemical Transistors.

PubMed

Doris, Sean E; Pierre, Adrien; Street, Robert A

2018-04-01

In recent years, organic electrochemical transistors (OECTs) have found applications in chemical and biological sensing and interfacing, neuromorphic computing, digital logic, and printed electronics. However, the incorporation of OECTs in practical electronic circuits is limited by the relative lack of control over their threshold voltage, which is important for controlling the power consumption and noise margin in complementary and unipolar circuits. Here, the threshold voltage of OECTs is precisely tuned over a range of more than 1 V by chemically controlling the electrochemical potential at the gate electrode. This threshold voltage tunability is exploited to prepare inverters and amplifiers with improved noise margin and gain, respectively. By coupling the gate electrode with an electrochemical oscillator, single-transistor oscillators based on OECTs with dynamic time-varying threshold voltages are prepared. This work highlights the importance of electrochemistry at the gate electrode in determining the electrical properties of OECTs, and opens a path toward the system-level design of low-power OECT-based electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Employment of single-diode model to elucidate the variations in photovoltaic parameters under different electrical and thermal conditions

PubMed Central

Hameed, Shilan S.; Aziz, Fakhra; Sulaiman, Khaulah; Ahmad, Zubair

2017-01-01

In this research work, numerical simulations are performed to correlate the photovoltaic parameters with various internal and external factors influencing the performance of solar cells. Single-diode modeling approach is utilized for this purpose and theoretical investigations are compared with the reported experimental evidences for organic and inorganic solar cells at various electrical and thermal conditions. Electrical parameters include parasitic resistances (Rs and Rp) and ideality factor (n), while thermal parameters can be defined by the cells temperature (T). A comprehensive analysis concerning broad spectral variations in the short circuit current (Isc), open circuit voltage (Voc), fill factor (FF) and efficiency (η) is presented and discussed. It was generally concluded that there exists a good agreement between the simulated results and experimental findings. Nevertheless, the controversial consequence of temperature impact on the performance of organic solar cells necessitates the development of a complementary model which is capable of well simulating the temperature impact on these devices performance. PMID:28793325

CMOS/SOS processing

NASA Technical Reports Server (NTRS)

Ramondetta, P.

1980-01-01

Report describes processes used in making complementary - metal - oxide - semiconductor/silicon-on-sapphire (CMOS/SOS) integrated circuits. Report lists processing steps ranging from initial preparation of sapphire wafers to final mapping of "good" and "bad" circuits on a wafer.

High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes

NASA Astrophysics Data System (ADS)

Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

2017-09-01

As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes.

PubMed

Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

2017-09-01

As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

NASA Astrophysics Data System (ADS)

Yin, Lan; Bozler, Carl; Harburg, Daniel V.; Omenetto, Fiorenzo; Rogers, John A.

2015-01-01

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

Metal contact engineering and registration-free fabrication of complementary metal-oxide semiconductor integrated circuits using aligned carbon nanotubes.

PubMed

Wang, Chuan; Ryu, Koungmin; Badmaev, Alexander; Zhang, Jialu; Zhou, Chongwu

2011-02-22

Complementary metal-oxide semiconductor (CMOS) operation is very desirable for logic circuit applications as it offers rail-to-rail swing, larger noise margin, and small static power consumption. However, it remains to be a challenging task for nanotube-based devices. Here in this paper, we report our progress on metal contact engineering for n-type nanotube transistors and CMOS integrated circuits using aligned carbon nanotubes. By using Pd as source/drain contacts for p-type transistors, small work function metal Gd as source/drain contacts for n-type transistors, and evaporated SiO(2) as a passivation layer, we have achieved n-type transistor, PN diode, and integrated CMOS inverter with an air-stable operation. Compared with other nanotube n-doping techniques, such as potassium doping, PEI doping, hydrazine doping, etc., using low work function metal contacts for n-type nanotube devices is not only air stable but also integrated circuit fabrication compatible. Moreover, our aligned nanotube platform for CMOS integrated circuits shows significant advantage over the previously reported individual nanotube platforms with respect to scalability and reproducibility and suggests a practical and realistic approach for nanotube-based CMOS integrated circuit applications.

Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

PubMed

Nam, SungWoo; Jiang, Xiaocheng; Xiong, Qihua; Ham, Donhee; Lieber, Charles M

2009-12-15

Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arsenide (n-InAs) and p-type germanium/silicon core/shell (p-Ge/Si) nanowire (NW) field-effect transistors (FETs). The DC voltage output (V(out)) versus input (V(in)) response of vertically interconnected CMOS inverters showed sharp switching at close to the ideal value of one-half the supply voltage and, moreover, exhibited substantial DC gain of approximately 45. The gain and the rail-to-rail output switching are consistent with the large noise margin and minimal static power consumption of CMOS. Vertically interconnected, three-stage CMOS ring oscillators were also fabricated by using layer-1 InAs NW n-FETs and layer-2 Ge/Si NW p-FETs. Significantly, measurements of these circuits demonstrated stable, self-sustained oscillations with a maximum frequency of 108 MHz, which represents the highest-frequency integrated circuit based on chemically synthesized nanoscale materials. These results highlight the flexibility of bottom-up assembly of distinct nanoscale materials and suggest substantial promise for 3D integrated circuits.

Development of analog watch with minute repeater

NASA Astrophysics Data System (ADS)

Okigami, Tomio; Aoyama, Shigeru; Osa, Takashi; Igarashi, Kiyotaka; Ikegami, Tomomi

A complementary metal oxide semiconductor with large scale integration was developed for an electronic minute repeater. It is equipped with the synthetic struck sound circuit to generate natural struck sound necessary for the minute repeater. This circuit consists of an envelope curve drawing circuit, frequency mixer, polyphonic mixer, and booster circuit made by using analog circuit technology. This large scale integration is a single chip microcomputer with motor drivers and input ports in addition to the synthetic struck sound circuit, and it is possible to make an electronic system of minute repeater at a very low cost in comparison with the conventional type.

Bistability in a complementary metal oxide semiconductor inverter circuit.

PubMed

Carroll, Thomas L

2005-09-01

Radiofrequency signals can disrupt the operation of low frequency circuits. A digital inverter circuit would seem to be immune to such disruption, because its output state usually jumps abruptly between 0 and 5 V. Nevertheless, when driven with a high frequency signal, the inverter can have two coexisting stable states (which are not at 0 and 5 V). Slow switching between these states (by changing the rf signal) will produce a low frequency signal. I demonstrate the bistability in a circuit experiment and in a simple model of the circuit.

Error suppression via complementary gauge choices in Reed-Muller codes

NASA Astrophysics Data System (ADS)

Chamberland, Christopher; Jochym-O'Connor, Tomas

2017-09-01

Concatenation of two quantum error-correcting codes with complementary sets of transversal gates can provide a means toward universal fault-tolerant quantum computation. We first show that it is generally preferable to choose the inner code with the higher pseudo-threshold to achieve lower logical failure rates. We then explore the threshold properties of a wide range of concatenation schemes. Notably, we demonstrate that the concatenation of complementary sets of Reed-Muller codes can increase the code capacity threshold under depolarizing noise when compared to extensions of previously proposed concatenation models. We also analyze the properties of logical errors under circuit-level noise, showing that smaller codes perform better for all sampled physical error rates. Our work provides new insights into the performance of universal concatenated quantum codes for both code capacity and circuit-level noise.

A Self-Sustained Wireless Multi-Sensor Platform Integrated with Printable Organic Sensors for Indoor Environmental Monitoring

PubMed Central

Wu, Chun-Chang; Chuang, Wen-Yu; Wu, Ching-Da; Su, Yu-Cheng; Huang, Yung-Yang; Huang, Yang-Jing; Peng, Sheng-Yu; Yu, Shih-An; Lin, Chih-Ting; Lu, Shey-Shi

2017-01-01

A self-sustained multi-sensor platform for indoor environmental monitoring is proposed in this paper. To reduce the cost and power consumption of the sensing platform, in the developed platform, organic materials of PEDOT:PSS and PEDOT:PSS/EB-PANI are used as the sensing films for humidity and CO2 detection, respectively. Different from traditional gas sensors, these organic sensing films can operate at room temperature without heating processes or infrared transceivers so that the power consumption of the developed humidity and the CO2 sensors can be as low as 10 μW and 5 μW, respectively. To cooperate with these low-power sensors, a Complementary Metal-Oxide-Semiconductor (CMOS) system-on-chip (SoC) is designed to amplify and to read out multiple sensor signals with low power consumption. The developed SoC includes an analog-front-end interface circuit (AFE), an analog-to-digital convertor (ADC), a digital controller and a power management unit (PMU). Scheduled by the digital controller, the sensing circuits are power gated with a small duty-cycle to reduce the average power consumption to 3.2 μW. The designed PMU converts the power scavenged from a dye sensitized solar cell (DSSC) module into required supply voltages for SoC circuits operation under typical indoor illuminance conditions. To our knowledge, this is the first multiple environmental parameters (Temperature/CO2/Humidity) sensing platform that demonstrates a true self-powering functionality for long-term operations. PMID:28353680

A Self-Sustained Wireless Multi-Sensor Platform Integrated with Printable Organic Sensors for Indoor Environmental Monitoring.

PubMed

Wu, Chun-Chang; Chuang, Wen-Yu; Wu, Ching-Da; Su, Yu-Cheng; Huang, Yung-Yang; Huang, Yang-Jing; Peng, Sheng-Yu; Yu, Shih-An; Lin, Chih-Ting; Lu, Shey-Shi

2017-03-29

A self-sustained multi-sensor platform for indoor environmental monitoring is proposed in this paper. To reduce the cost and power consumption of the sensing platform, in the developed platform, organic materials of PEDOT:PSS and PEDOT:PSS/EB-PANI are used as the sensing films for humidity and CO₂ detection, respectively. Different from traditional gas sensors, these organic sensing films can operate at room temperature without heating processes or infrared transceivers so that the power consumption of the developed humidity and the CO₂ sensors can be as low as 10 μW and 5 μW, respectively. To cooperate with these low-power sensors, a Complementary Metal-Oxide-Semiconductor (CMOS) system-on-chip (SoC) is designed to amplify and to read out multiple sensor signals with low power consumption. The developed SoC includes an analog-front-end interface circuit (AFE), an analog-to-digital convertor (ADC), a digital controller and a power management unit (PMU). Scheduled by the digital controller, the sensing circuits are power gated with a small duty-cycle to reduce the average power consumption to 3.2 μW. The designed PMU converts the power scavenged from a dye sensitized solar cell (DSSC) module into required supply voltages for SoC circuits operation under typical indoor illuminance conditions. To our knowledge, this is the first multiple environmental parameters (Temperature/CO₂/Humidity) sensing platform that demonstrates a true self-powering functionality for long-term operations.

Fast, Low-Power, Hysteretic Level-Detector Circuit

NASA Technical Reports Server (NTRS)

Arditti, Mordechai

1993-01-01

Circuit for detection of preset levels of voltage or current intended to replace standard fast voltage comparator. Hysteretic analog/digital level detector operates at unusually low power with little sacrifice of speed. Comprises low-power analog circuit and complementary metal oxide/semiconductor (CMOS) digital circuit connected in overall closed feedback loop to decrease rise and fall times, provide hysteresis, and trip-level control. Contains multiple subloops combining linear and digital feedback. Levels of sensed signals and hysteresis level easily adjusted by selection of components to suit specific application.

The effect of body bias of the metal-oxide-semiconductor field-effect transistor in the resistive network on spatial current distribution in a bio-inspired complementary metal-oxide-semiconductor vision chip

NASA Astrophysics Data System (ADS)

Kong, Jae-Sung; Hyun, Hyo-Young; Seo, Sang-Ho; Shin, Jang-Kyoo

2008-11-01

Complementary metal-oxide-semiconductor (CMOS) vision chips for edge detection based on a resistive circuit have recently been developed. These chips help in the creation of neuromorphic systems of a compact size, high speed of operation, and low power dissipation. The output of the vision chip depends predominantly upon the electrical characteristics of the resistive network which consists of a resistive circuit. In this paper, the body effect of the metal-oxide-semiconductor field-effect transistor for current distribution in a resistive circuit is discussed with a simple model. In order to evaluate the model, two 160 × 120 CMOS vision chips have been fabricated using a standard CMOS technology. The experimental results nicely match our prediction.

Heterogeneous integration of low-temperature metal-oxide TFTs

NASA Astrophysics Data System (ADS)

Schuette, Michael L.; Green, Andrew J.; Leedy, Kevin D.; McCandless, Jonathan P.; Jessen, Gregg H.

2017-02-01

The breadth of circuit fabrication opportunities enabled by metal-oxide thin-film transistors (MO-TFTs) is unprecedented. Large-area deposition techniques and high electron mobility are behind their adoption in the display industry, and substrate agnosticism and low process temperatures enabled the present wave of flexible electronics research. Reports of circuits involving complementaryMO-TFTs, oxide-organic hybrid combinations, and even MO-TFTs integrated onto Si LSI back end of line interconnects demonstrate this technology's utility in 2D and 3D monolithic heterogeneous integration (HI). In addition to a brief literature review focused on functional HI between MO-TFTs and a variety of dissimilar active devices, we share progress toward integrating MO-TFTs with compound semiconductor devices, namely GaN HEMTs. A monolithically integrated cascode topology was used to couple a HEMT's >200 V breakdown characteristic with the gate driving characteristic of an IGZO TFT, effectively shifting the HEMT threshold voltage from -3 V to +1 V.

Active pixel sensor array with multiresolution readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor); Pain, Bedabrata (Inventor)

1999-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Yongsuk; Kang, Junmo; Jariwala, Deep

2016-03-22

Low-voltage complementary circuits comprising n-type and p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated. The resulting VFETs possess high on-state current densities (>3000 A cm-2) and on/off current ratios (>104) in a narrow voltage window (<3 V).

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Nakamura, Junichi (Inventor); Kemeny, Sabrina E. (Inventor)

2005-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Making A D-Latch Sensitive To Alpha Particles

NASA Technical Reports Server (NTRS)

Buehler, Martin G.; Blaes, Brent R.; Nixon, Robert H.

1994-01-01

Standard complementary metal oxide/semiconductor (CMOS) D-latch integrated circuit modified to increase susceptibility to single-event upsets (SEU's) (changes in logic state) caused by impacts of energetic alpha particles. Suitable for use in relatively inexpensive bench-scale SEU tests of itself and of related integrated circuits like static random-access memories.

Interface Circuits for Self-Checking Microprocessors

NASA Technical Reports Server (NTRS)

Rennels, D. A.; Chandramouli, R.

1986-01-01

Fault-tolerant-microcomputer concept based on enhancing "simple" computer with redundancy and self-checking logic circuits detect hardware faults. Interface and checking logic and redundant processors confer on 16-bit microcomputer ability to check itself for hardware faults. Checking circuitry also checks itself. Concept of self-checking complementary pairs (SCCP's) employed throughout ICL unit.

Radiation induced failures of complementary metal oxide semiconductor containing pacemakers: a potentially lethal complication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lewin, A.A.; Serago, C.F.; Schwade, J.G.

1984-10-01

New multi-programmable pacemakers frequently employ complementary metal oxide semiconductors (CMOS). This circuitry appears more sensitive to the effects of ionizing radiation when compared to the semiconductor circuits used in older pacemakers. A case of radiation induced runaway pacemaker in a CMOS device is described. Because of this and other recent reports of radiation therapy-induced CMOS type pacemaker failure, these pacemakers should not be irradiated. If necessary, the pacemaker can be shielded or moved to a site which can be shielded before institution of radiation therapy. This is done to prevent damage to the CMOS circuit and the life threatening arrythmiasmore » which may result from such damage.« less

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

PubMed

Yu, Lili; Zubair, Ahmad; Santos, Elton J G; Zhang, Xu; Lin, Yuxuan; Zhang, Yuhao; Palacios, Tomás

2015-08-12

Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.

Speed-Up Techniques for Complementary Metal Oxide Semiconductor Very Large Scale Integration.

DTIC Science & Technology

1984-12-14

The input voltage at which the two transistors are in the constant current region at the same time marks the active operating region of the inverter...decoder precharge configurations. One circuit displayed a marked enhancement in operation while the other precharged circuit displyed degraded operation due...34 IEEE Journal of Solid State Circuits, SC-18: 457-462 (October 1983). 19. Cobbold , R. Theory and Applications of Field Effect Transistors, New York: John

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

PubMed

Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il-Kwon; Kim, Hyungjun; Ahn, Jong-Hyun

2016-11-01

2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS 2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Monolithically Integrated Flexible Black Phosphorus Complementary Inverter Circuits.

PubMed

Liu, Yuanda; Ang, Kah-Wee

2017-07-25

Two-dimensional (2D) inverters are a fundamental building block for flexible logic circuits which have previously been realized by heterogeneously wiring transistors with two discrete channel materials. Here, we demonstrate a monolithically integrated complementary inverter made using a homogeneous black phosphorus (BP) nanosheet on flexible substrates. The digital logic inverter circuit is demonstrated via effective threshold voltage tuning within a single BP material, which offers both electron and hole dominated conducting channels with nearly symmetric pinch-off and current saturation. Controllable electron concentration is achieved by accurately modulating the aluminum (Al) donor doping, which realizes BP n-FET with a room-temperature on/off ratio >10 3 . Simultaneously, work function engineering is employed to obtain a low Schottky barrier contact electrode that facilities hole injection, thus enhancing the current density of the BP p-FET by 9.4 times. The flexible inverter circuit shows a clear digital logic voltage inversion operation along with a larger-than-unity direct current voltage gain, while exhibits alternating current dynamic signal switching at a record high frequency up to 100 kHz and remarkable electrical stability upon mechanical bending with a radii as small as 4 mm. Our study demonstrates a practical monolithic integration strategy for achieving functional logic circuits on one material platform, paving the way for future high-density flexible electronic applications.

CMOS Active-Pixel Image Sensor With Simple Floating Gates

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

1996-01-01

Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

PubMed Central

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Abstract Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlOx), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers. PMID:28634499

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

PubMed

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

Total Dose Effects on Single Event Transients in Digital CMOS and Linear Bipolar Circuits

NASA Technical Reports Server (NTRS)

Buchner, S.; McMorrow, D.; Sibley, M.; Eaton, P.; Mavis, D.; Dusseau, L.; Roche, N. J-H.; Bernard, M.

2009-01-01

This presentation discusses the effects of ionizing radiation on single event transients (SETs) in circuits. The exposure of integrated circuits to ionizing radiation changes electrical parameters. The total ionizing dose effect is observed in both complementary metal-oxide-semiconductor (CMOS) and bipolar circuits. In bipolar circuits, transistors exhibit grain degradation, while in CMOS circuits, transistors exhibit threshold voltage shifts. Changes in electrical parameters can cause changes in single event upset(SEU)/SET rates. Depending on the effect, the rates may increase or decrease. Therefore, measures taken for SEU/SET mitigation might work at the beginning of a mission but not at the end following TID exposure. The effect of TID on SET rates should be considered if SETs cannot be tolerated.

Zero energy-storage ballast for compact fluorescent lamps

DOEpatents

Schultz, W.N.; Thomas, R.J.

1999-08-31

A CFL ballast includes complementary-type switching devices connected in series with their gates connected together at a control node. The switching devices supply a resonant tank circuit which is tuned to a frequency near, but slightly lower than, the resonant frequency of a resonant control circuit. As a result, the tank circuit restarts oscillations immediately following each zero crossing of the bus voltage. Such rapid restarts avoid undesirable flickering while maintaining the operational advantages and high efficacy of the CFL ballast. 4 figs.

Zero energy-storage ballast for compact fluorescent lamps

DOEpatents

Schultz, William Newell; Thomas, Robert James

1999-01-01

A CFL ballast includes complementary-type switching devices connected in series with their gates connected together at a control node. The switching devices supply a resonant tank circuit which is tuned to a frequency near, but slightly lower than, the resonant frequency of a resonant control circuit. As a result, the tank circuit restarts oscillations immediately following each zero crossing of the bus voltage. Such rapid restarts avoid undesirable flickering while maintaining the operational advantages and high efficacy of the CFL ballast.

Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors.

PubMed

Chen, Haitian; Cao, Yu; Zhang, Jialu; Zhou, Chongwu

2014-06-13

Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors to achieve large-scale (>1,000 transistors for 501-stage ring oscillators) complementary macroelectronic circuits on both rigid and flexible substrates. This approach of hybrid integration allows us to combine the strength of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and offers high device yield and low device variation. Based on this approach, we report the successful demonstration of various logic gates (inverter, NAND and NOR gates), ring oscillators (from 51 stages to 501 stages) and dynamic logic circuits (dynamic inverter, NAND and NOR gates).

Complementary Paired G4FETs as Voltage-Controlled NDR Device

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Chen, Suheng; Blalock, Ben; Britton, Chuck; Prothro, Ben; Vandersand, James; Schrimph, Ron; Cristoloveanu, Sorin; Akavardar, Kerem; Gentil, P.

2009-01-01

It is possible to synthesize a voltage-controlled negative-differential-resistance (NDR) device or circuit by use of a pair of complementary G4FETs (four-gate field-effect transistors). [For more information about G4FETs, please see the immediately preceding article]. As shown in Figure 1, the present voltage-controlled NDR device or circuit is an updated version of a prior NDR device or circuit, known as a lambda diode, that contains a pair of complementary junction field-effect transistors (JFETs). (The lambda diode is so named because its current-versus- voltage plot bears some resemblance to an upper-case lambda.) The present version can be derived from the prior version by substituting G4FETs for the JFETs and connecting both JFET gates of each G4FET together. The front gate terminals of the G4FETs constitute additional terminals (that is, terminals not available in the older JFET version) to which one can apply control voltages VN and VP. Circuits in which NDR devices have been used include (1) Schmitt triggers and (2) oscillators containing inductance/ capacitance (LC) resonant circuits. Figure 2 depicts such circuits containing G4FET NDR devices like that of Figure 1. In the Schmitt trigger shown here, the G4FET NDR is loaded with an ordinary inversion-mode, p-channel, metal oxide/semiconductor field-effect transistor (inversion-mode PMOSFET), the VN terminal of the G4FET NDR device is used as an input terminal, and the input terminals of the PMOSFET and the G4FET NDR device are connected. VP can be used as an extra control voltage (that is, a control voltage not available in a typical prior Schmitt trigger) for adjusting the pinch-off voltage of the p-channel G4FET and thereby adjusting the trigger-voltage window. In the oscillator, a G4FET NDR device is loaded with a conventional LC tank circuit. As in other LC NDR oscillators, oscillation occurs because the NDR counteracts the resistance in the tank circuit. The advantage of this G4FET-NDR LC oscillator over a conventional LC NDR oscillator is that one can apply a time-varying signal to one of the extra control input terminals (VN or VP) to modulate the conductance of the NDR device and thereby amplitude-modulate the output signal.

Multifunctional Logic Gate Controlled by Temperature

NASA Technical Reports Server (NTRS)

Stoica, Adrian; Zebulum, Ricardo

2005-01-01

A complementary metal oxide/semiconductor (CMOS) electronic circuit has been designed to function as a NAND gate at a temperature between 0 and 80 deg C and as a NOR gate at temperatures from 120 to 200 C. In the intermediate temperature range of 80 to 120 C, this circuit is expected to perform a function intermediate between NAND and NOR with degraded noise margin. The process of designing the circuit and the planned fabrication and testing of the circuit are parts of demonstration of polymorphic electronics a technological discipline that emphasizes designing the same circuit to perform different analog and/or digital functions under different conditions. In this case, the different conditions are different temperatures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Lan; Harburg, Daniel V.; Rogers, John A., E-mail: jrogers@illinois.edu

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formedmore » with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.« less

Organic integrated circuits for information storage based on ambipolar polymers and charge injection engineering

NASA Astrophysics Data System (ADS)

Dell'Erba, Giorgio; Luzio, Alessandro; Natali, Dario; Kim, Juhwan; Khim, Dongyoon; Kim, Dong-Yu; Noh, Yong-Young; Caironi, Mario

2014-04-01

Ambipolar semiconducting polymers, characterized by both high electron (μe) and hole (μh) mobility, offer the advantage of realizing complex complementary electronic circuits with a single semiconducting layer, deposited by simple coating techniques. However, to achieve complementarity, one of the two conduction paths in transistors has to be suppressed, resulting in unipolar devices. Here, we adopt charge injection engineering through a specific interlayer in order to tune injection into frontier energy orbitals of a high mobility donor-acceptor co-polymer. Starting from field-effect transistors with Au contacts, showing a p-type unbalanced behaviour with μh = 0.29 cm2/V s and μe = 0.001 cm2/V s, through the insertion of a caesium salt interlayer with optimized thickness, we obtain an n-type unbalanced transistor with μe = 0.12 cm2/V s and μh = 8 × 10-4 cm2/V s. We applied this result to the development of the basic pass-transistor logic building blocks such as inverters, with high gain and good noise margin, and transmission-gates. In addition, we developed and characterized information storage circuits like D-Latches and D-Flip-Flops consisting of 16 transistors, demonstrating both their static and dynamic performances and thus the suitability of this technology for more complex circuits such as display addressing logic.

Rail-to-rail differential input amplification stage with main and surrogate differential pairs

DOEpatents

Britton, Jr., Charles Lanier; Smith, Stephen Fulton

2007-03-06

An operational amplifier input stage provides a symmetrical rail-to-rail input common-mode voltage without turning off either pair of complementary differential input transistors. Secondary, or surrogate, transistor pairs assume the function of the complementary differential transistors. The circuit also maintains essentially constant transconductance, constant slew rate, and constant signal-path supply current as it provides rail-to-rail operation.

Graphene radio frequency receiver integrated circuit.

PubMed

Han, Shu-Jen; Garcia, Alberto Valdes; Oida, Satoshi; Jenkins, Keith A; Haensch, Wilfried

2014-01-01

Graphene has attracted much interest as a future channel material in radio frequency electronics because of its superior electrical properties. Fabrication of a graphene integrated circuit without significantly degrading transistor performance has proven to be challenging, posing one of the major bottlenecks to compete with existing technologies. Here we present a fabrication method fully preserving graphene transistor quality, demonstrated with the implementation of a high-performance three-stage graphene integrated circuit. The circuit operates as a radio frequency receiver performing signal amplification, filtering and downconversion mixing. All circuit components are integrated into 0.6 mm(2) area and fabricated on 200 mm silicon wafers, showing the unprecedented graphene circuit complexity and silicon complementary metal-oxide-semiconductor process compatibility. The demonstrated circuit performance allow us to use graphene integrated circuit to perform practical wireless communication functions, receiving and restoring digital text transmitted on a 4.3-GHz carrier signal.

Graphene radio frequency receiver integrated circuit

NASA Astrophysics Data System (ADS)

Han, Shu-Jen; Garcia, Alberto Valdes; Oida, Satoshi; Jenkins, Keith A.; Haensch, Wilfried

2014-01-01

Graphene has attracted much interest as a future channel material in radio frequency electronics because of its superior electrical properties. Fabrication of a graphene integrated circuit without significantly degrading transistor performance has proven to be challenging, posing one of the major bottlenecks to compete with existing technologies. Here we present a fabrication method fully preserving graphene transistor quality, demonstrated with the implementation of a high-performance three-stage graphene integrated circuit. The circuit operates as a radio frequency receiver performing signal amplification, filtering and downconversion mixing. All circuit components are integrated into 0.6 mm2 area and fabricated on 200 mm silicon wafers, showing the unprecedented graphene circuit complexity and silicon complementary metal-oxide-semiconductor process compatibility. The demonstrated circuit performance allow us to use graphene integrated circuit to perform practical wireless communication functions, receiving and restoring digital text transmitted on a 4.3-GHz carrier signal.

Complementary Metal-Oxide-Silicon (CMOS)-Memristor Hybrid Nanoelectronics for Advanced Encryption Standard (AES) Encryption

DTIC Science & Technology

2016-04-01

with Al top electrodes and Cu bottom electrodes. ................... 9 Figure 4. SPICE netlist structure...memory elements play a part in logic gate. 4.4.2 Simulation SPICE Simulation Program for Integrated Circuits Emphasis ( SPICE ) is a general-purpose...analog circuit simulator that was developed at the Electronics Research Laboratory of the University of California, Berkeley [6]. In 1975, SPICE

Multifunctional Logic Gate Controlled by Supply Voltage

NASA Technical Reports Server (NTRS)

Stoica, Adrian; Zebulum, Ricardo

2005-01-01

A complementary metal oxide/semiconductor (CMOS) electronic circuit functions as a NAND gate at a power-supply potential (V(sub dd)) of 3.3 V and as NOR gate for V(sub dd) = 1.8 V. In the intermediate V(sub dd) range of 1.8 to 3.3 V, this circuit performs a function intermediate between NAND and NOR with degraded noise margin. Like the circuit of the immediately preceding article, this circuit serves as a demonstration of the evolutionary approach to design of polymorphic electronics -- a technological discipline that emphasizes evolution of the design of a circuit to perform different analog and/or digital functions under different conditions. In this instance, the different conditions are different values of V(sub dd).

Triple inverter pierce oscillator circuit suitable for CMOS

DOEpatents

Wessendorf,; Kurt, O [Albuquerque, NM

2007-02-27

An oscillator circuit is disclosed which can be formed using discrete field-effect transistors (FETs), or as a complementary metal-oxide-semiconductor (CMOS) integrated circuit. The oscillator circuit utilizes a Pierce oscillator design with three inverter stages connected in series. A feedback resistor provided in a feedback loop about a second inverter stage provides an almost ideal inverting transconductance thereby allowing high-Q operation at the resonator-controlled frequency while suppressing a parasitic oscillation frequency that is inherent in a Pierce configuration using a "standard" triple inverter for the sustaining amplifier. The oscillator circuit, which operates in a range of 10 50 MHz, has applications for use as a clock in a microprocessor and can also be used for sensor applications.

High-Performance Organic Vertical Thin Film Transistor Using Graphene as a Tunable Contact.

PubMed

Liu, Yuan; Zhou, Hailong; Weiss, Nathan O; Huang, Yu; Duan, Xiangfeng

2015-11-24

Here we present a general strategy for the fabrication of high-performance organic vertical thin film transistors (OVTFTs) based on the heterostructure of graphene and different organic semiconductor thin films. Utilizing the unique tunable work function of graphene, we show that the vertical carrier transport across the graphene-organic semiconductor junction can be effectively modulated to achieve an ON/OFF ratio greater than 10(3). Importantly, with the OVTFT design, the channel length is determined by the organic thin film thickness rather than by lithographic resolution. It can thus readily enable transistors with ultrashort channel lengths (<200 nm) to afford a delivering current greatly exceeding that of conventional planar TFTs, thus enabling a respectable operation frequency (up to 0.4 MHz) while using low-mobility organic semiconductors and low-resolution lithography. With this vertical device architecture, the entire organic channel is sandwiched and naturally protected between the source and drain electrodes, which function as the self-passivation layer to ensure stable operation of both p- and n-type OVTFTs in ambient conditions and enable complementary circuits with voltage gain. The creation of high-performance and highly robust OVTFTs can open up exciting opportunities in large-area organic macroelectronics.

An Autonomous Circuit for the Measurement of Photovoltaic Devices Parameters.

DTIC Science & Technology

1986-09-01

Comparison Data, Gallium Arsenide ................ 80 A 7 A,. TABLE OF SYMBOLS A Curve Fitting Constant ADC Analog to Digital Converter AMO Air-Mass-Zero...in Radiation Fluence in the Logarithmic Region CMOS Complementary Metal-Oxide Semiconductor DAC Digital to Analog Converter DC Direct Current Dp Hole...characteristics of individual solar cells. A novel circuit is developed that uses a microprocessor controlled Digital to Analog Converter (DAC) to obtain

Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.

PubMed

Zhao, Yudan; Li, Qunqing; Xiao, Xiaoyang; Li, Guanhong; Jin, Yuanhao; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

2016-02-23

We have proposed and fabricated stable and repeatable, flexible, single-walled carbon nanotube (SWCNT) thin film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) integrated circuits based on a three-dimensional (3D) structure. Two layers of SWCNT-TFT devices were stacked, where one layer served as n-type devices and the other one served as p-type devices. On the basis of this method, it is able to save at least half of the area required to construct an inverter and make large-scale and high-density integrated CMOS circuits easier to design and manufacture. The 3D flexible CMOS inverter gain can be as high as 40, and the total noise margin is more than 95%. Moreover, the input and output voltage of the inverter are exactly matched for cascading. 3D flexible CMOS NOR, NAND logic gates, and 15-stage ring oscillators were fabricated on PI substrates with high performance as well. Stable electrical properties of these circuits can be obtained with bending radii as small as 3.16 mm, which shows that such a 3D structure is a reliable architecture and suitable for carbon nanotube electrical applications in complex flexible and wearable electronic devices.

Optimized structural designs for stretchable silicon integrated circuits.

PubMed

Kim, Dae-Hyeong; Liu, Zhuangjian; Kim, Yun-Soung; Wu, Jian; Song, Jizhou; Kim, Hoon-Sik; Huang, Yonggang; Hwang, Keh-Chih; Zhang, Yongwei; Rogers, John A

2009-12-01

Materials and design strategies for stretchable silicon integrated circuits that use non-coplanar mesh layouts and elastomeric substrates are presented. Detailed experimental and theoretical studies reveal many of the key underlying aspects of these systems. The results shpw, as an example, optimized mechanics and materials for circuits that exhibit maximum principal strains less than 0.2% even for applied strains of up to approximately 90%. Simple circuits, including complementary metal-oxide-semiconductor inverters and n-type metal-oxide-semiconductor differential amplifiers, validate these designs. The results suggest practical routes to high-performance electronics with linear elastic responses to large strain deformations, suitable for diverse applications that are not readily addressed with conventional wafer-based technologies.

Soluble fullerene derivatives: The effect of electronic structure on transistor performance and air stability

NASA Astrophysics Data System (ADS)

Ball, James M.; Bouwer, Ricardo K. M.; Kooistra, Floris B.; Frost, Jarvist M.; Qi, Yabing; Domingo, Ester Buchaca; Smith, Jeremy; de Leeuw, Dago M.; Hummelen, Jan C.; Nelson, Jenny; Kahn, Antoine; Stingelin, Natalie; Bradley, Donal D. C.; Anthopoulos, Thomas D.

2011-07-01

The family of soluble fullerene derivatives comprises a widely studied group of electron transporting molecules for use in organic electronic and optoelectronic devices. For electronic applications, electron transporting (n-channel) materials are required for implementation into organic complementary logic circuit architectures. To date, few soluble candidate materials have been studied that fulfill the stringent requirements of high carrier mobility and air stability. Here we present a study of three soluble fullerenes with varying electron affinity to assess the impact of electronic structure on device performance and air stability. Through theoretical and experimental analysis of the electronic structure, characterization of thin-film structure, and characterization of transistor device properties we find that the air stability of the present series of fullerenes not only depends on the absolute electron affinity of the semiconductor but also on the disorder within the thin-film.

Performance Enhancement of Polymer Solar Cells by Using Two Polymer Donors with Complementary Absorption Spectra.

PubMed

Lu, Heng; Zhang, Xuejuan; Li, Cuihong; Wei, Hedi; Liu, Qian; Li, Weiwei; Bo, Zhishan

2015-07-01

Performance enhancement of polymer solar cells (PSCs) is achieved by expanding the absorption of the active layer of devices. To better match the spectrum of solar radiation, two polymers with different band gaps are used as the donor material to fabricate ternary polymer cells. Ternary blend PSCs exhibit an enhanced short-circuit current density and open-circuit voltage in comparison with the corresponding HD-PDFC-DTBT (HD)- and DT-PDPPTPT (DPP)-based binary polymer solar cells, respectively. Ternary PSCs show a power conversion efficiency (PCE) of 6.71%, surpassing the corresponding binary PSCs. This work demonstrates that the fabrication of ternary PSCs by using two polymers with complementary absorption is an effective way to improve the device performance. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A CMOS current-mode log(x) and log(1/x) functions generator

NASA Astrophysics Data System (ADS)

Al-Absi, Munir A.; Al-Tamimi, Karama M.

2014-08-01

A novel Complementary Metal Oxide Semiconductor (CMOS) current-mode low-voltage and low-power controllable logarithmic function circuit is presented. The proposed design utilises one Operational Transconductance Amplifier (OTA) and two PMOS transistors biased in weak inversion region. The proposed design provides high dynamic range, controllable amplitude, high accuracy and is insensitive to temperature variations. The circuit operates on a ±0.6 V power supply and consumes 0.3 μW. The functionality of the proposed circuit was verified using HSPICE with 0.35 μm 2P4M CMOS process technology.

Social Origins of Developmental Risk for Mental and Physical Illness.

PubMed

Cameron, Judy L; Eagleson, Kathie L; Fox, Nathan A; Hensch, Takao K; Levitt, Pat

2017-11-08

Adversity in early childhood exerts an enduring impact on mental and physical health, academic achievement, lifetime productivity, and the probability of interfacing with the criminal justice system. More science is needed to understand how the brain is affected by early life stress (ELS), which produces excessive activation of stress response systems broadly throughout the child's body (toxic stress). Our research examines the importance of sex, timing and type of stress exposure, and critical periods for intervention in various brain systems across species. Neglect (the absence of sensitive and responsive caregiving) or disrupted interaction with offspring induces robust, lasting consequences in mice, monkeys, and humans. Complementary assessment of internalizing disorders and brain imaging in children suggests that early adversity can interfere with white matter development in key brain regions, which may increase risk for emotional difficulties in the long term. Neural circuits that are most plastic during ELS exposure in monkeys sustain the greatest change in gene expression, offering a mechanism whereby stress timing might lead to markedly different long-term behaviors. Rodent models reveal that disrupted maternal-infant interactions yield metabolic and behavioral outcomes often differing by sex. Moreover, ELS may further accelerate or delay critical periods of development, which reflect GABA circuit maturation, BDNF, and circadian Clock genes. Such factors are associated with several mental disorders and may contribute to a premature closure of plastic windows for intervention following ELS. Together, complementary cross-species studies are elucidating principles of adaptation to adversity in early childhood with molecular, cellular, and whole organism resolution. Copyright © 2017 the authors 0270-6474/17/3710783-09$15.00/0.

Semiconductor/High-Tc-Superconductor Hybrid ICs

NASA Technical Reports Server (NTRS)

Burns, Michael J.

1995-01-01

Hybrid integrated circuits (ICs) containing both Si-based semiconducting and YBa(2)Cu(3)O(7-x) superconducting circuit elements on sapphire substrates developed. Help to prevent diffusion of Cu from superconductors into semiconductors. These hybrid ICs combine superconducting and semiconducting features unavailable in superconducting or semiconducting circuitry alone. For example, complementary metal oxide/semiconductor (CMOS) readout and memory devices integrated with fast-switching Josephson-junction super-conducting logic devices and zero-resistance interconnections.

Minimal Power Latch for Single-Slope ADCs

NASA Technical Reports Server (NTRS)

Hancock, Bruce R.

2013-01-01

Column-parallel analog-to-digital converters (ADCs) for imagers involve simultaneous operation of many ADCs. Single-slope ADCs are well adapted to this use because of their simplicity. Each ADC contains a comparator, comparing its input signal level to an increasing reference signal (ramp). When the ramp is equal to the input, the comparator triggers a latch that captures an encoded counter value (code). Knowing the captured code, the ramp value and hence the input signal are determined. In a column-parallel ADC, each column contains only the comparator and the latches; the ramp and code generation are shared. In conventional latch or flip-flop circuits, there is an input stage that tracks the input signal, and this stage consumes switching current every time the input changes. With many columns, many bits, and high code rates, this switching current can be substantial. It will also generate noise that may corrupt the analog signals. A latch was designed that does not track the input, and consumes power only at the instant of latching the data value. The circuit consists of two S-R (set-reset) latches, gated by the comparator. One is set by high data values and the other by low data values. The latches are cross-coupled so that the first one to set blocks the other. In order that the input data not need an inversion, which would consume power, the two latches are made in complementary polarity. This requires complementary gates from the comparator, instead of complementary data values, but the comparator only triggers once per conversion, and usually has complementary outputs to begin with. An efficient CMOS (complementary metal oxide semiconductor) implementation of this circuit is shown in the figure, where C is the comparator output, D is the data (code), and Q0 and Q1 are the outputs indicating the capture of a zero or one value. The latch for Q0 has a negative-true set signal and output, and is implemented using OR-AND-INVERT logic, while the latch for Q1 uses positive- true signals and is implemented using AND-OR-INVERT logic. In this implementation, both latches are cleared when the comparator is reset. Two redundant transistors are removed from the reset side of each latch, making for a compact layout. CMOS imagers with column-parallel ADCs have demonstrated high performance for remote sensing applications. With this latch circuit, the power consumption and noise can be further reduced. This innovation can be used in CMOS imagers and very-low-power electronics

Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory

NASA Astrophysics Data System (ADS)

Kang, Minji; Khim, Dongyoon; Park, Won-Tae; Kim, Jihong; Kim, Juhwan; Noh, Yong-Young; Baeg, Kang-Jun; Kim, Dong-Yu

2015-07-01

Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.

Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory.

PubMed

Kang, Minji; Khim, Dongyoon; Park, Won-Tae; Kim, Jihong; Kim, Juhwan; Noh, Yong-Young; Baeg, Kang-Jun; Kim, Dong-Yu

2015-07-23

Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.

Flexible non-volatile memory devices based on organic semiconductors

NASA Astrophysics Data System (ADS)

Cosseddu, Piero; Casula, Giulia; Lai, Stefano; Bonfiglio, Annalisa

2015-09-01

The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

One-shot multivibrator with complementary metal-oxide-semiconductor components

NASA Technical Reports Server (NTRS)

Oneill, R. W.

1970-01-01

Breadboard model is tuned to produce output pulses from one microsecond up to several seconds in width with up to 95 percent duty cycle, and with lower power consumption than previously existing circuits.

Materials Integration and Doping of Carbon Nanotube-based Logic Circuits

NASA Astrophysics Data System (ADS)

Geier, Michael

Over the last 20 years, extensive research into the structure and properties of single- walled carbon nanotube (SWCNT) has elucidated many of the exceptional qualities possessed by SWCNTs, including record-setting tensile strength, excellent chemical stability, distinctive optoelectronic features, and outstanding electronic transport characteristics. In order to exploit these remarkable qualities, many application-specific hurdles must be overcome before the material can be implemented in commercial products. For electronic applications, recent advances in sorting SWCNTs by electronic type have enabled significant progress towards SWCNT-based integrated circuits. Despite these advances, demonstrations of SWCNT-based devices with suitable characteristics for large-scale integrated circuits have been limited. The processing methodologies, materials integration, and mechanistic understanding of electronic properties developed in this dissertation have enabled unprecedented scales of SWCNT-based transistor fabrication and integrated circuit demonstrations. Innovative materials selection and processing methods are at the core of this work and these advances have led to transistors with the necessary transport properties required for modern circuit integration. First, extensive collaborations with other research groups allowed for the exploration of SWCNT thin-film transistors (TFTs) using a wide variety of materials and processing methods such as new dielectric materials, hybrid semiconductor materials systems, and solution-based printing of SWCNT TFTs. These materials were integrated into circuit demonstrations such as NOR and NAND logic gates, voltage-controlled ring oscillators, and D-flip-flops using both rigid and flexible substrates. This dissertation explores strategies for implementing complementary SWCNT-based circuits, which were developed by using local metal gate structures that achieve enhancement-mode p-type and n-type SWCNT TFTs with widely separated and symmetric threshold voltages. Additionally, a novel n-type doping procedure for SWCNT TFTs was also developed utilizing a solution-processed organometallic small molecule to demonstrate the first network top-gated n-type SWCNT TFTs. Lastly, new doping and encapsulation layers were incorporated to stabilize both p-type and n-type SWCNT TFT electronic properties, which enabled the fabrication of large-scale memory circuits. Employing these materials and processing advances has addressed many application specific barriers to commercialization. For instance, the first thin-film SWCNT complementary metal-oxide-semi-conductor (CMOS) logic devices are demonstrated with sub-nanowatt static power consumption and full rail-to-rail voltage transfer characteristics. With the introduction of a new n-type Rh-based molecular dopant, the first SWCNT TFTs are fabricated in top-gate geometries over large areas with high yield. Then by utilizing robust encapsulation methods, stable and uniform electronic performance of both p-type and n-type SWCNT TFTs has been achieved. Based on these complementary SWCNT TFTs, it is possible to simulate, design, and fabricate arrays of low-power static random access memory (SRAM) circuits, achieving large-scale integration for the first time based on solution-processed semiconductors. Together, this work provides a direct pathway for solution processable, large scale, power-efficient advanced integrated logic circuits and systems.

Optical programmable Boolean logic unit.

PubMed

Chattopadhyay, Tanay

2011-11-10

Logic units are the building blocks of many important computational operations likes arithmetic, multiplexer-demultiplexer, radix conversion, parity checker cum generator, etc. Multifunctional logic operation is very much essential in this respect. Here a programmable Boolean logic unit is proposed that can perform 16 Boolean logical operations from a single optical input according to the programming input without changing the circuit design. This circuit has two outputs. One output is complementary to the other. Hence no loss of data can occur. The circuit is basically designed by a 2×2 polarization independent optical cross bar switch. Performance of the proposed circuit has been achieved by doing numerical simulations. The binary logical states (0,1) are represented by the absence of light (null) and presence of light, respectively.

Active quench and reset integrated circuit with novel hold-off time control logic for Geiger-mode avalanche photodiodes.

PubMed

Deng, Shijie; Morrison, Alan P

2012-09-15

This Letter presents an active quench-and-reset circuit for Geiger-mode avalanche photodiodes (GM-APDs). The integrated circuit was fabricated using a conventional 0.35 μm complementary metal oxide semiconductor process. Experimental results show that the circuit is capable of linearly setting the hold-off time from several nanoseconds to microseconds with a resolution of 6.5 ns. This allows the selection of the optimal afterpulse-free hold-off time for the GM-APD via external digital inputs or additional signal processing circuitry. Moreover, this circuit resets the APD automatically following the end of the hold-off period, thus simplifying the control for the end user. Results also show that a minimum dead time of 28.4 ns is achieved, demonstrating a saturated photon-counting rate of 35.2 Mcounts/s.

Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring.

PubMed

Malits, Maria; Brouk, Igor; Nemirovsky, Yael

2018-05-19

This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage ( V t ) can be used to accurately measure the chip local temperature by using a V t extractor circuit. Furthermore, the circuit's performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the V t extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 µm partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of ±1.5 K across 300 K⁻500 K temperature range while consuming only 30 µW during operation.

A nanocryotron comparator can connect single-flux-quantum circuits to conventional electronics

NASA Astrophysics Data System (ADS)

Zhao, Qing-Yuan; McCaughan, Adam N.; Dane, Andrew E.; Berggren, Karl K.; Ortlepp, Thomas

2017-04-01

Integration with conventional electronics offers a straightforward and economical approach to upgrading existing superconducting technologies, such as scaling up superconducting detectors into large arrays and combining single flux quantum (SFQ) digital circuits with semiconductor logic gates and memories. However, direct output signals from superconducting devices (e.g., Josephson junctions) are usually not compatible with the input requirements of conventional devices (e.g., transistors). Here, we demonstrate the use of a single three-terminal superconducting-nanowire device, called the nanocryotron (nTron), as a digital comparator to combine SFQ circuits with mature semiconductor circuits such as complementary metal oxide semiconductor (CMOS) circuits. Since SFQ circuits can digitize output signals from general superconducting devices and CMOS circuits can interface existing CMOS-compatible electronics, our results demonstrate the feasibility of a general architecture that uses an nTron as an interface to realize a ‘super-hybrid’ system consisting of superconducting detectors, superconducting quantum electronics, CMOS logic gates and memories, and other conventional electronics.

Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform interferometer

DOE PAGES

Arenas, D. J.; Shim, Dongha; Koukis, D. I.; ...

2011-10-24

Optical methods for measuring of the emission spectra of oscillator circuits operating in the 400-600 GHz range are described. The emitted power from patch antennas included in the circuits is measured by placing the circuit in the source chamber of a Fourier-transform interferometric spectrometer. The results show that this optical technique is useful for measuring circuits pushing the frontier in operating frequency. The technique also allows the characterization of the circuit by measuring the power radiated in the fundamental and in the harmonics. This capability is useful for oscillator architectures designed to cancel the fundamental and use higher harmonics. Themore » radiated power was measured using two techniques: direct measurement of the power by placing the device in front of a bolometer of known responsivity, and by comparison to the estimated power from blackbody sources. The latter technique showed that these circuits have higher emission than blackbody sources at the operating frequencies, and, therefore, offer potential spectroscopy applications.« less

Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

PubMed Central

Wang, Huiliang; Wei, Peng; Li, Yaoxuan; Han, Jeff; Lee, Hye Ryoung; Naab, Benjamin D.; Liu, Nan; Wang, Chenggong; Adijanto, Eric; Tee, Benjamin C.-K.; Morishita, Satoshi; Li, Qiaochu; Gao, Yongli; Cui, Yi; Bao, Zhenan

2014-01-01

Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at VDD = 80 V (70% of 1/2VDD) and a gain of 85. Additionally, robust SWNT complementary metal−oxide−semiconductor inverter (noise margin 72% of 1/2VDD) and logic gates with rail-to-rail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate. PMID:24639537

Survey of key technologies on millimeter-wave CMOS integrated circuits

NASA Astrophysics Data System (ADS)

Yu, Fei; Gao, Lei; Li, Lixiang; Cai, Shuo; Wang, Wei; Wang, Chunhua

2018-05-01

In order to provide guidance for the development of high performance millimeter-wave complementary metal oxide semiconductor (MMW-CMOS) integrated circuits (IC), this paper provides a survey of key technologies on MMW-CMOS IC. Technical background of MMW wireless communications is described. Then the recent development of the critical technologies of the MMW-CMOS IC are introduced in detail and compared. A summarization is given, and the development prospects on MMW-CMOS IC are also discussed.

Characterization and modelling of a microstrip line loaded with complementary split-ring resonators (CSRRs) and its application to highpass filters

NASA Astrophysics Data System (ADS)

Li, C.; Li, Fang

2007-06-01

A method to characterize and model a microstrip line coupled with complementary split-ring resonators (CSRRs) is investigated. The detailed parameter extraction approach based on three characteristic frequencies is presented. Good agreement between the results of the equivalent circuit model and the full wave simulations supports the effectiveness of the proposed modelling methodology. In particular, it is found that the shunt capacitance in the equivalent circuit has a negative value which appears to contradict the general physical perception. The physical rationality of the problem is discussed and justified. It is found that the negative capacitance is a natural part required to approximate more closely the distributed nature of the CSRR-loaded microstrip line and the whole equivalent circuit still satisfies Foster's reactance theorem. To extract the effective permittivity of the CSRR-loaded microstrip, the dielectric window concept and the effective medium theory are both applied. Both their results show the negative permittivity at the vicinity of the resonance. Finally, the application of the CSRRs in microstip highpass filters is presented to highlight the unique features of the CSRRs and the validity of their equivalent circuit descriptions. Compared with conventional structures, the proposed highpass filters not only have via free structure but also exhibit extremely steep out-of-band rejection. This may lead to useful applications.

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

PubMed

Yang, Yingjun; Ding, Li; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

2017-04-25

Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

Electronic switching circuit uses complementary non-linear components

NASA Technical Reports Server (NTRS)

Zucker, O. S.

1972-01-01

Inherent switching properties of saturable inductors and storage diodes are combined to perform large variety of electronic functions, such as pulse shaping, gating, and multiplexing. Passive elements replace active switching devices in generation of complex waveforms.

Verilog-A Device Models for Cryogenic Temperature Operation of Bulk Silicon CMOS Devices

NASA Technical Reports Server (NTRS)

Akturk, Akin; Potbhare, Siddharth; Goldsman, Neil; Holloway, Michael

2012-01-01

Verilog-A based cryogenic bulk CMOS (complementary metal oxide semiconductor) compact models are built for state-of-the-art silicon CMOS processes. These models accurately predict device operation at cryogenic temperatures down to 4 K. The models are compatible with commercial circuit simulators. The models extend the standard BSIM4 [Berkeley Short-channel IGFET (insulated-gate field-effect transistor ) Model] type compact models by re-parameterizing existing equations, as well as adding new equations that capture the physics of device operation at cryogenic temperatures. These models will allow circuit designers to create optimized, reliable, and robust circuits operating at cryogenic temperatures.

Associative Pattern Recognition In Analog VLSI Circuits

NASA Technical Reports Server (NTRS)

Tawel, Raoul

1995-01-01

Winner-take-all circuit selects best-match stored pattern. Prototype cascadable very-large-scale integrated (VLSI) circuit chips built and tested to demonstrate concept of electronic associative pattern recognition. Based on low-power, sub-threshold analog complementary oxide/semiconductor (CMOS) VLSI circuitry, each chip can store 128 sets (vectors) of 16 analog values (vector components), vectors representing known patterns as diverse as spectra, histograms, graphs, or brightnesses of pixels in images. Chips exploit parallel nature of vector quantization architecture to implement highly parallel processing in relatively simple computational cells. Through collective action, cells classify input pattern in fraction of microsecond while consuming power of few microwatts.

Integrated logic circuits using single-atom transistors

PubMed Central

Mol, J. A.; Verduijn, J.; Levine, R. D.; Remacle, F.

2011-01-01

Scaling down the size of computing circuits is about to reach the limitations imposed by the discrete atomic structure of matter. Reducing the power requirements and thereby dissipation of integrated circuits is also essential. New paradigms are needed to sustain the rate of progress that society has become used to. Single-atom transistors, SATs, cascaded in a circuit are proposed as a promising route that is compatible with existing technology. We demonstrate the use of quantum degrees of freedom to perform logic operations in a complementary-metal–oxide–semiconductor device. Each SAT performs multilevel logic by electrically addressing the electronic states of a dopant atom. A single electron transistor decodes the physical multivalued output into the conventional binary output. A robust scalable circuit of two concatenated full adders is reported, where by utilizing charge and quantum degrees of freedom, the functionality of the transistor is pushed far beyond that of a simple switch. PMID:21808050

Percolation, sliding, localization and relaxation in topologically closed circuits

NASA Astrophysics Data System (ADS)

Hurowitz, Daniel; Cohen, Doron

2016-03-01

Considering a random walk in a random environment in a topologically closed circuit, we explore the implications of the percolation and sliding transitions for its relaxation modes. A complementary question regarding the “delocalization” of eigenstates of non-hermitian Hamiltonians has been addressed by Hatano, Nelson, and followers. But we show that for a conservative stochastic process the implied spectral properties are dramatically different. In particular we determine the threshold for under-damped relaxation, and observe “complexity saturation” as the bias is increased.

Packet Controller For Wireless Headset

NASA Technical Reports Server (NTRS)

Christensen, Kurt K.; Swanson, Richard J.

1993-01-01

Packet-message controller implements communications protocol of network of wireless headsets. Designed for headset application, readily adapted to other uses; slight modification enables controller to implement Integrated Services Digital Network (ISDN) X.25 protocol, giving far-reaching applications in telecommunications. Circuit converts continuous voice signals into digital packets of data and vice versa. Operates in master or slave mode. Controller reduced to single complementary metal oxide/semiconductor integrated-circuit chip. Occupies minimal space in headset and consumes little power, extending life of headset battery.

Effect of the co-sensitization sequence on the performance of dye-sensitized solar cells with porphyrin and organic dyes.

PubMed

Fan, Suhua; Lu, Xuefeng; Sun, Hong; Zhou, Gang; Chang, Yuan Jay; Wang, Zhong-Sheng

2016-01-14

To obtain a broad spectral response in the visible region, TiO2 film is co-sensitized with a porphyrin dye (FNE57 or FNE59) and an organic dye (FNE46). It is found that the stepwise co-sensitization in one single dye solution followed by in another single dye solution is better than the co-sensitization in a cocktail solution in terms of photovoltaic performance. The stepwise co-sensitization first with a porphyrin dye and then with an organic dye outperforms that in a reverse order. DSSC devices based on co-sensitizers FNE57 + FNE46 and FNE59 + FNE46 with a quasi-solid-state gel electrolyte generate power conversion efficiencies of 7.88% and 8.14%, respectively, which exhibits remarkable efficiency improvements of 61% and 35%, as compared with devices sensitized with the porphyrin dyes FNE57 and FNE59, respectively. Co-sensitization brings about a much improved short-circuit photocurrent due to the complementary absorption of the two sensitizers. The observed enhancement of incident monochromatic photon-to-electron conversion efficiency from individual dye sensitization to co-sensitization is attributed to the improved charge collection efficiency rather than to the light harvesting efficiency. Interestingly, the open-circuit photovoltage for the co-sensitization system comes between the higher voltage for the porphyrin dye (FNE57 or FNE59) and the lower voltage for the organic dye (FNE46), which is well correlated with their electron lifetimes. This finding indicates that not only the spectral complementation but also the electron lifetime should be considered to select dyes for co-sensitization.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2006-03-14

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2008-03-25

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector.

PubMed

Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

2014-01-13

We investigate signal-to-noise ratio (SNR) characteristics of an 850-nm optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The OEIC receiver is composed of a Si avalanche photodetector (APD) and BiCMOS analog circuits including a transimpedance amplifier with DC-balanced buffer, a tunable equalizer, a limiting amplifier, and an output buffer with 50-Ω loads. We measure APD SNR characteristics dependence on the reverse bias voltage as well as BiCMOS circuit noise characteristics. From these, we determine the SNR characteristics of the entire OEIC receiver, and finally, the results are verified with bit-error rate measurement.

2D negative capacitance field-effect transistor with organic ferroelectrics.

PubMed

Zhang, Heng; Chen, Yan; Ding, Shijin; Wang, Jianlu; Bao, Wenzhong; Zhang, David Wei; Zhou, Peng

2018-06-15

In the past fifty years, complementary metal-oxide-semiconductor integrated circuits have undergone significant development, but Moore's law will soon come to an end. In order to break through the physical limit of Moore's law, 2D materials have been widely used in many electronic devices because of their high mobility and excellent mechanical flexibility. And the emergence of a negative capacitance field-effect transistor (NCFET) could not only break the thermal limit of conventional devices, but reduce the operating voltage and power consumption. This paper demonstrates a 2D NCFET that treats molybdenum disulfide as a channel material and organic P(VDF-TrFE) as a gate dielectric directly. This represents a new attempt to prepare NCFETs and produce flexible electronic devices. It exhibits a 10^6 on-/off-current ratio. And the minimum subthreshold swing (SS) of the 21 mV/decade and average SS of the 44 mV/decade in four orders of magnitude of drain current can also be observed at room temperature of 300 K.

2D negative capacitance field-effect transistor with organic ferroelectrics

NASA Astrophysics Data System (ADS)

Zhang, Heng; Chen, Yan; Ding, Shijin; Wang, Jianlu; Bao, Wenzhong; Zhang, David Wei; Zhou, Peng

2018-06-01

In the past fifty years, complementary metal-oxide-semiconductor integrated circuits have undergone significant development, but Moore’s law will soon come to an end. In order to break through the physical limit of Moore’s law, 2D materials have been widely used in many electronic devices because of their high mobility and excellent mechanical flexibility. And the emergence of a negative capacitance field-effect transistor (NCFET) could not only break the thermal limit of conventional devices, but reduce the operating voltage and power consumption. This paper demonstrates a 2D NCFET that treats molybdenum disulfide as a channel material and organic P(VDF-TrFE) as a gate dielectric directly. This represents a new attempt to prepare NCFETs and produce flexible electronic devices. It exhibits a 106 on-/off-current ratio. And the minimum subthreshold swing (SS) of the 21 mV/decade and average SS of the 44 mV/decade in four orders of magnitude of drain current can also be observed at room temperature of 300 K.

Teaching by Telephone: The Problems of Teaching Without the Visual Channel

ERIC Educational Resources Information Center

Short, John

1974-01-01

Observations and research on telephone communication as opposed to face-to-face and closed circuit TV communication are examined, and telephone's advantages and disadvantages are listed with the conclusion that it can constitute an acceptable complementary teaching approach. (JT)

Design of a Sub-Picosecond Jitter with Adjustable-Range CMOS Delay-Locked Loop for High-Speed and Low-Power Applications

PubMed Central

Abdulrazzaq, Bilal I.; Ibrahim, Omar J.; Kawahito, Shoji; Sidek, Roslina M.; Shafie, Suhaidi; Yunus, Nurul Amziah Md.; Lee, Lini; Halin, Izhal Abdul

2016-01-01

A Delay-Locked Loop (DLL) with a modified charge pump circuit is proposed for generating high-resolution linear delay steps with sub-picosecond jitter performance and adjustable delay range. The small-signal model of the modified charge pump circuit is analyzed to bring forth the relationship between the DLL’s internal control voltage and output time delay. Circuit post-layout simulation shows that a 0.97 ps delay step within a 69 ps delay range with 0.26 ps Root-Mean Square (RMS) jitter performance is achievable using a standard 0.13 µm Complementary Metal-Oxide Semiconductor (CMOS) process. The post-layout simulation results show that the power consumption of the proposed DLL architecture’s circuit is 0.1 mW when the DLL is operated at 2 GHz. PMID:27690040

Differential wide temperature range CMOS interface circuit for capacitive MEMS pressure sensors.

PubMed

Wang, Yucai; Chodavarapu, Vamsy P

2015-02-12

We describe a Complementary Metal-Oxide Semiconductor (CMOS) differential interface circuit for capacitive Micro-Electro-Mechanical Systems (MEMS) pressure sensors that is functional over a wide temperature range between -55 °C and 225 °C. The circuit is implemented using IBM 0.13 μm CMOS technology with 2.5 V power supply. A constant-gm biasing technique is used to mitigate performance degradation at high temperatures. The circuit offers the flexibility to interface with MEMS sensors with a wide range of the steady-state capacitance values from 0.5 pF to 10 pF. Simulation results show that the circuitry has excellent linearity and stability over the wide temperature range. Experimental results confirm that the temperature effects on the circuitry are small, with an overall linearity error around 2%.

Differential Wide Temperature Range CMOS Interface Circuit for Capacitive MEMS Pressure Sensors

PubMed Central

Wang, Yucai; Chodavarapu, Vamsy P.

2015-01-01

We describe a Complementary Metal-Oxide Semiconductor (CMOS) differential interface circuit for capacitive Micro-Electro-Mechanical Systems (MEMS) pressure sensors that is functional over a wide temperature range between −55 °C and 225 °C. The circuit is implemented using IBM 0.13 μm CMOS technology with 2.5 V power supply. A constant-gm biasing technique is used to mitigate performance degradation at high temperatures. The circuit offers the flexibility to interface with MEMS sensors with a wide range of the steady-state capacitance values from 0.5 pF to 10 pF. Simulation results show that the circuitry has excellent linearity and stability over the wide temperature range. Experimental results confirm that the temperature effects on the circuitry are small, with an overall linearity error around 2%. PMID:25686312

Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2016-06-09

We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

High-Speed Binary-Output Image Sensor

NASA Technical Reports Server (NTRS)

Fossum, Eric; Panicacci, Roger A.; Kemeny, Sabrina E.; Jones, Peter D.

1996-01-01

Photodetector outputs digitized by circuitry on same integrated-circuit chip. Developmental special-purpose binary-output image sensor designed to capture up to 1,000 images per second, with resolution greater than 10 to the 6th power pixels per image. Lower-resolution but higher-frame-rate prototype of sensor contains 128 x 128 array of photodiodes on complementary metal oxide/semiconductor (CMOS) integrated-circuit chip. In application for which it is being developed, sensor used to examine helicopter oil to determine whether amount of metal and sand in oil sufficient to warrant replacement.

Analysis of the capability to effectively design complementary metal oxide semiconductor integrated circuits

NASA Astrophysics Data System (ADS)

McConkey, M. L.

1984-12-01

A complete CMOS/BULK design cycle has been implemented and fully tested to evaluate its effectiveness and a viable set of computer-aided design tools for the layout, verification, and simulation of CMOS/BULK integrated circuits. This design cycle is good for p-well, n-well, or twin-well structures, although current fabrication technique available limit this to p-well only. BANE, an integrated layout program from Stanford, is at the center of this design cycle and was shown to be simple to use in the layout of CMOS integrated circuits (it can be also used to layout NMOS integrated circuits). A flowchart was developed showing the design cycle from initial layout, through design verification, and to circuit simulation using NETLIST, PRESIM, and RNL from the University of Washington. A CMOS/BULK library was designed and includes logic gates that were designed and completely tested by following this flowchart. Also designed was an arithmetic logic unit as a more complex test of the CMOS/BULK design cycle.

Delineating the Diversity of Spinal Interneurons in Locomotor Circuits.

PubMed

Gosgnach, Simon; Bikoff, Jay B; Dougherty, Kimberly J; El Manira, Abdeljabbar; Lanuza, Guillermo M; Zhang, Ying

2017-11-08

Locomotion is common to all animals and is essential for survival. Neural circuits located in the spinal cord have been shown to be necessary and sufficient for the generation and control of the basic locomotor rhythm by activating muscles on either side of the body in a specific sequence. Activity in these neural circuits determines the speed, gait pattern, and direction of movement, so the specific locomotor pattern generated relies on the diversity of the neurons within spinal locomotor circuits. Here, we review findings demonstrating that developmental genetics can be used to identify populations of neurons that comprise these circuits and focus on recent work indicating that many of these populations can be further subdivided into distinct subtypes, with each likely to play complementary functions during locomotion. Finally, we discuss data describing the manner in which these populations interact with each other to produce efficient, task-dependent locomotion. Copyright © 2017 the authors 0270-6474/17/3710835-07$15.00/0.

Towards circuit optogenetics.

PubMed

Chen, I-Wen; Papagiakoumou, Eirini; Emiliani, Valentina

2018-06-01

Optogenetics neuronal targeting combined with single-photon wide-field illumination has already proved its enormous potential in neuroscience, enabling the optical control of entire neuronal networks and disentangling their role in the control of specific behaviors. However, establishing how a single or a sub-set of neurons controls a specific behavior, or how functionally identical neurons are connected in a particular task, or yet how behaviors can be modified in real-time by the complex wiring diagram of neuronal connections requires more sophisticated approaches enabling to drive neuronal circuits activity with single-cell precision and millisecond temporal resolution. This has motivated on one side the development of flexible optical methods for two-photon (2P) optogenetic activation using either, or a hybrid of two approaches: scanning and parallel illumination. On the other side, it has stimulated the engineering of new opsins with modified spectral characteristics, channel kinetics and spatial distribution of expression, offering the necessary flexibility of choosing the appropriate opsin for each application. The need for optical manipulation of multiple targets with millisecond temporal resolution has imposed three-dimension (3D) parallel holographic illumination as the technique of choice for optical control of neuronal circuits organized in 3D. Today 3D parallel illumination exists in several complementary variants, each with a different degree of simplicity, light uniformity, temporal precision and axial resolution. In parallel, the possibility to reach hundreds of targets in 3D volumes has prompted the development of low-repetition rate amplified laser sources enabling high peak power, while keeping low average power for stimulating each cell. All together those progresses open the way for a precise optical manipulation of neuronal circuits with unprecedented precision and flexibility. Copyright © 2018 Elsevier Ltd. All rights reserved.

Mechanically Flexible and High-Performance CMOS Logic Circuits.

PubMed

Honda, Wataru; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2015-10-13

Low-power flexible logic circuits are key components required by the next generation of flexible electronic devices. For stable device operation, such components require a high degree of mechanical flexibility and reliability. Here, the mechanical properties of low-power flexible complementary metal-oxide-semiconductor (CMOS) logic circuits including inverter, NAND, and NOR are investigated. To fabricate CMOS circuits on flexible polyimide substrates, carbon nanotube (CNT) network films are used for p-type transistors, whereas amorphous InGaZnO films are used for the n-type transistors. The power consumption and voltage gain of CMOS inverters are <500 pW/mm at Vin = 0 V (<7.5 nW/mm at Vin = 5 V) and >45, respectively. Importantly, bending of the substrate is not found to cause significant changes in the device characteristics. This is also observed to be the case for more complex flexible NAND and NOR logic circuits for bending states with a curvature radius of 2.6 mm. The mechanical stability of these CMOS logic circuits makes them ideal candidates for use in flexible integrated devices.

Mechanically Flexible and High-Performance CMOS Logic Circuits

PubMed Central

Honda, Wataru; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2015-01-01

Low-power flexible logic circuits are key components required by the next generation of flexible electronic devices. For stable device operation, such components require a high degree of mechanical flexibility and reliability. Here, the mechanical properties of low-power flexible complementary metal–oxide–semiconductor (CMOS) logic circuits including inverter, NAND, and NOR are investigated. To fabricate CMOS circuits on flexible polyimide substrates, carbon nanotube (CNT) network films are used for p-type transistors, whereas amorphous InGaZnO films are used for the n-type transistors. The power consumption and voltage gain of CMOS inverters are <500 pW/mm at Vin = 0 V (<7.5 nW/mm at Vin = 5 V) and >45, respectively. Importantly, bending of the substrate is not found to cause significant changes in the device characteristics. This is also observed to be the case for more complex flexible NAND and NOR logic circuits for bending states with a curvature radius of 2.6 mm. The mechanical stability of these CMOS logic circuits makes them ideal candidates for use in flexible integrated devices. PMID:26459882

Heavy-ion induced single-event upset in integrated circuits

NASA Technical Reports Server (NTRS)

Zoutendyk, J. A.

1991-01-01

The cosmic ray environment in space can affect the operation of Integrated Circuit (IC) devices via the phenomenon of Single Event Upset (SEU). In particular, heavy ions passing through an IC can induce sufficient integrated current (charge) to alter the state of a bistable circuit, for example a memory cell. The SEU effect is studied in great detail in both static and dynamic memory devices, as well as microprocessors fabricated from bipolar, Complementary Metal Oxide Semiconductor (CMOS) and N channel Metal Oxide Semiconductor (NMOS) technologies. Each device/process reflects its individual characteristics (minimum scale geometry/process parameters) via a unique response to the direct ionization of electron hole pairs by heavy ion tracks. A summary of these analytical and experimental SEU investigations is presented.

A scalable neural chip with synaptic electronics using CMOS integrated memristors.

PubMed

Cruz-Albrecht, Jose M; Derosier, Timothy; Srinivasa, Narayan

2013-09-27

The design and simulation of a scalable neural chip with synaptic electronics using nanoscale memristors fully integrated with complementary metal-oxide-semiconductor (CMOS) is presented. The circuit consists of integrate-and-fire neurons and synapses with spike-timing dependent plasticity (STDP). The synaptic conductance values can be stored in memristors with eight levels, and the topology of connections between neurons is reconfigurable. The circuit has been designed using a 90 nm CMOS process with via connections to on-chip post-processed memristor arrays. The design has about 16 million CMOS transistors and 73 728 integrated memristors. We provide circuit level simulations of the entire chip performing neuronal and synaptic computations that result in biologically realistic functional behavior.

Neural CMOS-integrated circuit and its application to data classification.

PubMed

Göknar, Izzet Cem; Yildiz, Merih; Minaei, Shahram; Deniz, Engin

2012-05-01

Implementation and new applications of a tunable complementary metal-oxide-semiconductor-integrated circuit (CMOS-IC) of a recently proposed classifier core-cell (CC) are presented and tested with two different datasets. With two algorithms-one based on Fisher's linear discriminant analysis and the other based on perceptron learning, used to obtain CCs' tunable parameters-the Haberman and Iris datasets are classified. The parameters so obtained are used for hard-classification of datasets with a neural network structured circuit. Classification performance and coefficient calculation times for both algorithms are given. The CC has 6-ns response time and 1.8-mW power consumption. The fabrication parameters used for the IC are taken from CMOS AMS 0.35-μm technology.

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.

PubMed

Yan, Xiao; Zhang, David Wei; Liu, Chunsen; Bao, Wenzhong; Wang, Shuiyuan; Ding, Shijin; Zheng, Gengfeng; Zhou, Peng

2018-04-01

2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field-effect transistors. However, 2DLM-based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS 2 /GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM-based integrated circuits based on amplifier circuits.

A zirconium dioxide ammonia microsensor integrated with a readout circuit manufactured using the 0.18 μm CMOS process.

PubMed

Lin, Guan-Ming; Dai, Ching-Liang; Yang, Ming-Zhi

2013-03-15

The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit. The ammonia sensor is constructed by a sensitive film and the interdigitated electrodes. The sensitive film is zirconium dioxide that is coated on the interdigitated electrodes. The heater is used to provide a working temperature to the sensitive film. A post-process is employed to remove the sacrificial layer and to coat zirconium dioxide on the sensor. When the sensitive film adsorbs or desorbs ammonia gas, the sensor produces a change in resistance. The readout circuit converts the resistance variation of the sensor into the output voltage. The experiments show that the integrated ammonia sensor has a sensitivity of 4.1 mV/ppm.

A power management system for energy harvesting and wireless sensor networks application based on a novel charge pump circuit

NASA Astrophysics Data System (ADS)

Aloulou, R.; De Peslouan, P.-O. Lucas; Mnif, H.; Alicalapa, F.; Luk, J. D. Lan Sun; Loulou, M.

2016-05-01

Energy Harvesting circuits are developed as an alternative solution to supply energy to autonomous sensor nodes in Wireless Sensor Networks. In this context, this paper presents a micro-power management system for multi energy sources based on a novel design of charge pump circuit to allow the total autonomy of self-powered sensors. This work proposes a low-voltage and high performance charge pump (CP) suitable for implementation in standard complementary metal oxide semiconductor (CMOS) technologies. The CP design was implemented using Cadence Virtuoso with AMS 0.35μm CMOS technology parameters. Its active area is 0.112 mm2. Consistent results were obtained between the measured findings of the chip testing and the simulation results. The circuit can operate with an 800 mV supply and generate a boosted output voltage of 2.835 V with 1 MHz as frequency.

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures

PubMed Central

Yan, Xiao; Zhang, David Wei; Liu, Chunsen; Bao, Wenzhong; Wang, Shuiyuan; Ding, Shijin; Zheng, Gengfeng

2018-01-01

Abstract 2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field‐effect transistors. However, 2DLM‐based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS2/GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM‐based integrated circuits based on amplifier circuits. PMID:29721428

Design for low-power and reliable flexible electronics

NASA Astrophysics Data System (ADS)

Huang, Tsung-Ching (Jim)

Flexible electronics are emerging as an alternative to conventional Si electronics for large-area low-cost applications such as e-paper, smart sensors, and disposable RFID tags. By utilizing inexpensive manufacturing methods such as ink-jet printing and roll-to-roll imprinting, flexible electronics can be made on low-cost plastics just like printing a newspaper. However, the key elements of exible electronics, thin-film transistors (TFTs), have slower operating speeds and less reliability than their Si electronics counterparts. Furthermore, depending on the material property, TFTs are usually mono-type -- either p- or n-type -- devices. Making air-stable complementary TFT circuits is very challenging and not applicable to most TFT technologies. Existing design methodologies for Si electronics, therefore, cannot be directly applied to exible electronics. Other inhibiting factors such as high supply voltage, large process variation, and lack of trustworthy device modeling also make designing larger-scale and robust TFT circuits a significant challenge. The major goal of this dissertation is to provide a viable solution for robust circuit design in exible electronics. I will first introduce a reliability simulation framework that can predict the degraded TFT circuits' performance under bias-stress. This framework has been validated using the amorphous-silicon (a-Si) TFT scan driver for TFT-LCD displays. To reuse the existing CMOS design ow for exible electronics, I propose a Pseudo-CMOS cell library that can make TFT circuits operable under low supply voltage and which has post-fabrication tunability for reliability and performance enhancement. This cell library has been validated using 2V self-assembly-monolayer (SAM) organic TFTs with a low-cost shadow-mask deposition process. I will also demonstrate a 3-bit 1.25KS/s Flash ADC in a-Si TFTs, which is based on the proposed Pseudo-CMOS cell library, and explore more possibilities in display, energy, and sensing applications.

Towards a unified theory of neocortex: laminar cortical circuits for vision and cognition.

PubMed

Grossberg, Stephen

2007-01-01

A key goal of computational neuroscience is to link brain mechanisms to behavioral functions. The present article describes recent progress towards explaining how laminar neocortical circuits give rise to biological intelligence. These circuits embody two new and revolutionary computational paradigms: Complementary Computing and Laminar Computing. Circuit properties include a novel synthesis of feedforward and feedback processing, of digital and analog processing, and of preattentive and attentive processing. This synthesis clarifies the appeal of Bayesian approaches but has a far greater predictive range that naturally extends to self-organizing processes. Examples from vision and cognition are summarized. A LAMINART architecture unifies properties of visual development, learning, perceptual grouping, attention, and 3D vision. A key modeling theme is that the mechanisms which enable development and learning to occur in a stable way imply properties of adult behavior. It is noted how higher-order attentional constraints can influence multiple cortical regions, and how spatial and object attention work together to learn view-invariant object categories. In particular, a form-fitting spatial attentional shroud can allow an emerging view-invariant object category to remain active while multiple view categories are associated with it during sequences of saccadic eye movements. Finally, the chapter summarizes recent work on the LIST PARSE model of cognitive information processing by the laminar circuits of prefrontal cortex. LIST PARSE models the short-term storage of event sequences in working memory, their unitization through learning into sequence, or list, chunks, and their read-out in planned sequential performance that is under volitional control. LIST PARSE provides a laminar embodiment of Item and Order working memories, also called Competitive Queuing models, that have been supported by both psychophysical and neurobiological data. These examples show how variations of a common laminar cortical design can embody properties of visual and cognitive intelligence that seem, at least on the surface, to be mechanistically unrelated.

High-performance, mechanically flexible, and vertically integrated 3D carbon nanotube and InGaZnO complementary circuits with a temperature sensor.

PubMed

Honda, Wataru; Harada, Shingo; Ishida, Shohei; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2015-08-26

A vertically integrated inorganic-based flexible complementary metal-oxide-semiconductor (CMOS) inverter with a temperature sensor with a high inverter gain of ≈50 and a low power consumption of <7 nW mm(-1) is demonstrated using a layer-by-layer assembly process. In addition, the negligible influence of the mechanical flexibility on the performance of the CMOS inverter and the temperature dependence of the CMOS inverter characteristics are discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanoantennas for enhancing and confining the magnetic optical field

NASA Astrophysics Data System (ADS)

Grosjean, Thierry; Mivelle, Mathieu; Baida, Fadi I.; Burr, Geoffrey W.; Fischer, Ulrich C.

2011-05-01

We propose different optical antenna structures for enhancing and confining the magnetic optical field. A common feature of these structures are concave corners in thin metal films as locations of the enhanced magnetic field. This proposal is inspired by Babinet's principle as the concave edges are the complementary structures to convex metal corners, which are known to be locations of a strongly enhanced electric field. Bowtie antennas and the bowtie apertures of appropriate size were shown to exhibit resonances in the infrared frequency range with an especially strong enhancement of the electrical field in the gap between 2 convex metal corners. We show by numerical calculations, that the complementary structures, the complementary bowtie aperture - the diabolo antenna - and the complementary bow tie antenna - two closely spaced triangular apertures in a metal film with a narrow gap between two opposing concave corners - exhibit resonances with a strongly enhanced magnetic field at the narrow metal constriction between the concave corners. We suggest sub-wavelength circuits of concave and convex corners as building blocks of planar metamaterials.

Two Well-Miscible Acceptors Work as One for Efficient Fullerene-Free Organic Solar Cells.

PubMed

Yu, Runnan; Zhang, Shaoqing; Yao, Huifeng; Guo, Bing; Li, Sunsun; Zhang, Hao; Zhang, Maojie; Hou, Jianhui

2017-07-01

High-performance ternary organic solar cells are fabricated by using a wide-bandgap polymer donor (bithienyl-benzodithiophene-alt-fluorobenzotriazole copolymer, J52) and two well-miscible nonfullerene acceptors, methyl-modified nonfullerene acceptor (IT-M) and 2,2'-((2Z,2'Z)-((5,5'-(4,4,9,9-tetrakis(4-hexylphenyl)-4,9-dihydros-indaceno[1,2-b:5,6-b']dithiophene-2,7-diyl)bis(4-((2-ethylhexyl)oxy)thiophene-5,2-diyl))bis(methanylylidene))bis(3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile (IEICO). The two acceptors with complementary absorption spectra and similar lowest unoccupied molecular orbital levels show excellent compatibility in the blend due to their very similar chemical structures. Consequently, the obtained ternary organic solar cells (OSC) exhibits a high efficiency of 11.1%, with an enhanced short-circuit current density of 19.7 mA cm -2 and a fill factor of 0.668. In this ternary system, broadened absorption, similar output voltages, and compatible morphology are achieved simultaneously, demonstrating a promising strategy to further improve the performance of ternary OSCs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

2 Gbit/s 0.5 μm complementary metal-oxide semiconductor optical transceiver with event-driven dynamic power-on capability

NASA Astrophysics Data System (ADS)

Wang, Xingle; Kiamilev, Fouad; Gui, Ping; Wang, Xiaoqing; Ekman, Jeremy; Zuo, Yongrong; Blankenberg, Jason; Haney, Michael

2006-06-01

A 2 Gb/s0.5 μm complementary metal-oxide semiconductor optical transceiver designed for board- or backplane level power-efficient interconnections is presented. The transceiver supports optical wake-on-link (OWL), an event-driven dynamic power-on technique. Depending on external events, the transceiver resides in either the active mode or the sleep mode and switches accordingly. The active-to-sleep transition shuts off the normal, gigabit link and turns on dedicated circuits to establish a low-power (~1.8 mW), low data rate (less than 100 Mbits/s) link. In contrast the normal, gigabit link consumes over 100 mW. Similarly the sleep-to-active transition shuts off the low-power link and turns on the normal, gigabit link. The low-power link, sharing the same optical channel with the normal, gigabit link, is used to achieve transmitter/receiver pair power-on synchronization and greatly reduces the power consumption of the transceiver. A free-space optical platform was built to evaluate the transceiver performance. The experiment successfully demonstrated the event-driven dynamic power-on operation. To our knowledge, this is the first time a dynamic power-on scheme has been implemented for optical interconnects. The areas of the circuits that implement the low-power link are approximately one-tenth of the areas of the gigabit link circuits.

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

2011-01-01

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process was investigated. The structure of the ammonia sensor is composed of a sensitive film and polysilicon electrodes. The ammonia sensor requires a post-process to etch the sacrificial layer, and to coat the sensitive film on the polysilicon electrodes. The sensitive film that is prepared by a hydrothermal method is made of zinc oxide. The sensor resistance changes when the sensitive film adsorbs or desorbs ammonia gas. The readout circuit is used to convert the sensor resistance into the voltage output. Experiments show that the ammonia sensor has a sensitivity of about 1.5 mV/ppm at room temperature.

A 5GHz Band Low Noise and Wide Tuning Range Si-CMOS VCO with a Novel Varactors Pair Circuit

NASA Astrophysics Data System (ADS)

Ta, Tuan Thanh; Kameda, Suguru; Takagi, Tadashi; Tsubouchi, Kazuo

In this paper, a fully integrated 5GHz voltage controlled oscillator (VCO) is presented. The VCO is designed with 0.18µm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, a novel varactors pair circuit is proposed to cancel effects of capacitance fluctuation that makes harmonic currents which increase phase noise of VCO. The VCO with the proposed varactor circuit has tuning range from 5.1GHz to 6.1GHz (relative value of 17.9%) and phase noise of lower than -110.8dBc/Hz at 1MHz offset over the full tuning range. Figure-of-merit-with-tuning-range (FOMT) of the proposed VCO is -182dBc/Hz.

Primary status, complementary status, and organizational survival in the U.S. venture capital industry.

PubMed

Bothner, Matthew S; Kim, Young-Kyu; Lee, Wonjae

2015-07-01

We introduce a distinction between two kinds of status and examine their effects on the exit rates of organizations investing in the U.S. venture capital industry. Extending past work on status-based competition, we start with a simple baseline: we describe primary status as a network-related signal of an organization's quality in a leadership role, that is, as a function of the degree to which an organization leads others that are themselves well regarded as lead organizations in the context of investment syndicates. Combining Harary's (1959) image of the elite consultant with Goffman's (1956) concept of "capacity-esteem," we then discuss complementary status as an affiliation-based signal of an organization's quality in a supporting role. We measure complementary status as a function of the extent to which an organization is invited into syndicates by well-regarded lead organizations-that is, by those possessing high levels of primary status. Findings show that, conditioning on primary status, complementary status reduces the rate at which venture capital organizations exit the industry. Consistent with the premise that these kinds of status correspond to different roles and market identities, we also find that complementary status attenuates (and ultimately reverses) the otherwise favorable effect of primary status on an organization's life chances. Theoretically and methodologically oriented scope conditions, as well as implications for future research, are discussed. Copyright © 2015 Elsevier Inc. All rights reserved.

CMOS Active-Pixel Image Sensor With Intensity-Driven Readout

NASA Technical Reports Server (NTRS)

Langenbacher, Harry T.; Fossum, Eric R.; Kemeny, Sabrina

1996-01-01

Proposed complementary metal oxide/semiconductor (CMOS) integrated-circuit image sensor automatically provides readouts from pixels in order of decreasing illumination intensity. Sensor operated in integration mode. Particularly useful in number of image-sensing tasks, including diffractive laser range-finding, three-dimensional imaging, event-driven readout of sparse sensor arrays, and star tracking.

Radiation-hardened MRAM-based LUT for non-volatile FPGA soft error mitigation with multi-node upset tolerance

NASA Astrophysics Data System (ADS)

Zand, Ramtin; DeMara, Ronald F.

2017-12-01

In this paper, we have developed a radiation-hardened non-volatile lookup table (LUT) circuit utilizing spin Hall effect (SHE)-magnetic random access memory (MRAM) devices. The design is motivated by modeling the effect of radiation particles striking hybrid complementary metal oxide semiconductor/spin based circuits, and the resistive behavior of SHE-MRAM devices via established and precise physics equations. The models developed are leveraged in the SPICE circuit simulator to verify the functionality of the proposed design. The proposed hardening technique is based on using feedback transistors, as well as increasing the radiation capacity of the sensitive nodes. Simulation results show that our proposed LUT circuit can achieve multiple node upset (MNU) tolerance with more than 38% and 60% power-delay product improvement as well as 26% and 50% reduction in device count compared to the previous energy-efficient radiation-hardened LUT designs. Finally, we have performed a process variation analysis showing that the MNU immunity of our proposed circuit is realized at the cost of increased susceptibility to transistor and MRAM variations compared to an unprotected LUT design.

Hybrid integrated biological-solid-state system powered with adenosine triphosphate.

PubMed

Roseman, Jared M; Lin, Jianxun; Ramakrishnan, Siddharth; Rosenstein, Jacob K; Shepard, Kenneth L

2015-12-07

There is enormous potential in combining the capabilities of the biological and the solid state to create hybrid engineered systems. While there have been recent efforts to harness power from naturally occurring potentials in living systems in plants and animals to power complementary metal-oxide-semiconductor integrated circuits, here we report the first successful effort to isolate the energetics of an electrogenic ion pump in an engineered in vitro environment to power such an artificial system. An integrated circuit is powered by adenosine triphosphate through the action of Na(+)/K(+) adenosine triphosphatases in an integrated in vitro lipid bilayer membrane. The ion pumps (active in the membrane at numbers exceeding 2 × 10(6) mm(-2)) are able to sustain a short-circuit current of 32.6 pA mm(-2) and an open-circuit voltage of 78 mV, providing for a maximum power transfer of 1.27 pW mm(-2) from a single bilayer. Two series-stacked bilayers provide a voltage sufficient to operate an integrated circuit with a conversion efficiency of chemical to electrical energy of 14.9%.

MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.

PubMed

He, Xuexia; Chow, WaiLeong; Liu, Fucai; Tay, BengKang; Liu, Zheng

2017-01-01

2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS 2 ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS 2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm 2 V -1 s -1 , respectively. The ambipolar behavior is explained based on the band alignment of MoS 2 and rubrene. Furthermore, being a building block, the MoS 2 /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fundamental energy limits of SET-based Brownian NAND and half-adder circuits. Preliminary findings from a physical-information-theoretic methodology

NASA Astrophysics Data System (ADS)

Ercan, İlke; Suyabatmaz, Enes

2018-06-01

The saturation in the efficiency and performance scaling of conventional electronic technologies brings about the development of novel computational paradigms. Brownian circuits are among the promising alternatives that can exploit fluctuations to increase the efficiency of information processing in nanocomputing. A Brownian cellular automaton, where signals propagate randomly and are driven by local transition rules, can be made computationally universal by embedding arbitrary asynchronous circuits on it. One of the potential realizations of such circuits is via single electron tunneling (SET) devices since SET technology enable simulation of noise and fluctuations in a fashion similar to Brownian search. In this paper, we perform a physical-information-theoretic analysis on the efficiency limitations in a Brownian NAND and half-adder circuits implemented using SET technology. The method we employed here establishes a solid ground that enables studying computational and physical features of this emerging technology on an equal footing, and yield fundamental lower bounds that provide valuable insights into how far its efficiency can be improved in principle. In order to provide a basis for comparison, we also analyze a NAND gate and half-adder circuit implemented in complementary metal oxide semiconductor technology to show how the fundamental bound of the Brownian circuit compares against a conventional paradigm.

Optimal scan strategy for mega-pixel and kilo-gray-level OLED-on-silicon microdisplay.

PubMed

Ji, Yuan; Ran, Feng; Ji, Weigui; Xu, Meihua; Chen, Zhangjing; Jiang, Yuxi; Shen, Weixin

2012-06-10

The digital pixel driving scheme makes the organic light-emitting diode (OLED) microdisplays more immune to the pixel luminance variations and simplifies the circuit architecture and design flow compared to the analog pixel driving scheme. Additionally, it is easily applied in full digital systems. However, the data bottleneck becomes a notable problem as the number of pixels and gray levels grow dramatically. This paper will discuss the digital driving ability to achieve kilogray-levels for megapixel displays. The optimal scan strategy is proposed for creating ultra high gray levels and increasing light efficiency and contrast ratio. Two correction schemes are discussed to improve the gray level linearity. A 1280×1024×3 OLED-on-silicon microdisplay, with 4096 gray levels, is designed based on the optimal scan strategy. The circuit driver is integrated in the silicon backplane chip in the 0.35 μm 3.3 V-6 V dual voltage one polysilicon layer, four metal layers (1P4M) complementary metal-oxide semiconductor (CMOS) process with custom top metal. The design aspects of the optimal scan controller are also discussed. The test results show the gray level linearity of the correction schemes for the optimal scan strategy is acceptable by the human eye.

Advanced lesion symptom mapping analyses and implementation as BCBtoolkit.

PubMed

Foulon, Chris; Cerliani, Leonardo; Kinkingnéhun, Serge; Levy, Richard; Rosso, Charlotte; Urbanski, Marika; Volle, Emmanuelle; Thiebaut de Schotten, Michel

2018-03-01

Patients with brain lesions provide a unique opportunity to understand the functioning of the human mind. However, even when focal, brain lesions have local and remote effects that impact functionally and structurally connected circuits. Similarly, function emerges from the interaction between brain areas rather than their sole activity. For instance, category fluency requires the associations between executive, semantic, and language production functions. Here, we provide, for the first time, a set of complementary solutions for measuring the impact of a given lesion on the neuronal circuits. Our methods, which were applied to 37 patients with a focal frontal brain lesions, revealed a large set of directly and indirectly disconnected brain regions that had significantly impacted category fluency performance. The directly disconnected regions corresponded to areas that are classically considered as functionally engaged in verbal fluency and categorization tasks. These regions were also organized into larger directly and indirectly disconnected functional networks, including the left ventral fronto-parietal network, whose cortical thickness correlated with performance on category fluency. The combination of structural and functional connectivity together with cortical thickness estimates reveal the remote effects of brain lesions, provide for the identification of the affected networks, and strengthen our understanding of their relationship with cognitive and behavioral measures. The methods presented are available and freely accessible in the BCBtoolkit as supplementary software [1].

A microarchitecture for resource-limited superscalar microprocessors

NASA Astrophysics Data System (ADS)

Basso, Todd David

1999-11-01

Microelectronic components in space and satellite systems must be resistant to total dose radiation, single-even upset, and latchup in order to accomplish their missions. The demand for inexpensive, high-volume, radiation hardened (rad-hard) integrated circuits (ICs) is expected to increase dramatically as the communication market continues to expand. Motorola's Complementary Gallium Arsenide (CGaAsTM) technology offers superior radiation tolerance compared to traditional CMOS processes, while being more economical than dedicated rad-hard CMOS processes. The goals of this dissertation are to optimize a superscalar microarchitecture suitable for CGaAsTM microprocessors, develop circuit techniques for such applications, and evaluate the potential of CGaAsTM for the development of digital VLSI circuits. Motorola's 0.5 mum CGaAsTM process is summarized and circuit techniques applicable to digital CGaAsTM are developed. Direct coupled FET, complementary, and domino logic circuits are compared based on speed, power, area, and noise margins. These circuit techniques are employed in the design of a 600 MHz PowerPCTM arithmetic logic unit. The dissertation emphasizes CGaASTM-specific design considerations, specifically, low integration level. A baseline superscalar microarchitecture is defined and SPEC95 integer benchmark simulations are used to evaluate the applicability of advanced architectural features to microprocessors having low integration levels. The performance simulations center around the optimization of a simple superscalar core, small-scale branch prediction, instruction prefetching, and an off-chip primary data cache. The simulation results are used to develop a superscalar microarchitecture capable of outperforming a comparable sequential pipeline, while using only 500,000 transistors. The architecture, running at 200 MHz, is capable of achieving an estimated 153 MIPS, translating to a 27% performance increase over a comparable traditional pipelined microprocessor. The proposed microarchitecture is process independent and can be applied to low-cost, or transistor-limited applications. The proposed microarchitecture is implemented in the design of a 0.35 mum CMOS microprocessor, and the design of a 0.5 mum CGaAsTM micro-processor. The two technologies and designs are compared to ascertain the state of CGaAsTM for digital VLSI applications.

Transport properties of silicon complementary-metal-oxide semiconductor quantum well field-effect transistors

NASA Astrophysics Data System (ADS)

Naquin, Clint Alan

Introducing explicit quantum transport into silicon (Si) transistors in a manner compatible with industrial fabrication has proven challenging, yet has the potential to transform the performance horizons of large scale integrated Si devices and circuits. Explicit quantum transport as evidenced by negative differential transconductances (NDTCs) has been observed in a set of quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors fabricated using industrial silicon complementary MOS processing. The QW potential was formed via lateral ion implantation doping on a commercial 45 nm technology node process line, and measurements of the transfer characteristics show NDTCs up to room temperature. Detailed gate length and temperature dependence characteristics of the NDTCs in these devices have been measured. Gate length dependence of NDTCs shows a correlation of the interface channel length with the number of NDTCs formed as well as with the gate voltage (VG) spacing between NDTCs. The VG spacing between multiple NDTCs suggests a quasi-parabolic QW potential profile. The temperature dependence is consistent with partial freeze-out of carrier concentration against a degenerately doped background. A folding amplifier frequency multiplier circuit using a single QW NMOS transistor to generate a folded current-voltage transfer function via a NDTC was demonstrated. Time domain data shows frequency doubling in the kHz range at room temperature, and Fourier analysis confirms that the output is dominated by the second harmonic of the input. De-embedding the circuit response characteristics from parasitic cable and contact impedances suggests that in the absence of parasitics the doubling bandwidth could be as high as 10 GHz in a monolithic integrated circuit, limited by the transresistance magnitude of the QW NMOS. This is the first example of a QW device fabricated by mainstream Si CMOS technology being used in a circuit application and establishes the feasibility of scalable CMOS circuits that exploit explicit quantum transport. Ongoing quantum transport simulations based off of the spatial dopant distribution suggests a quasi-parabolic potential profile. Energy spacings between resonant transmission states are not consistent with experimental data, suggesting that either the assumed transport model is incomplete, or scattering mechanisms significantly mix the quasi-bound states and broaden the energy spacings.

High-performance ternary blend polymer solar cells involving both energy transfer and hole relay processes.

PubMed

Lu, Luyao; Chen, Wei; Xu, Tao; Yu, Luping

2015-06-04

The integration of multiple materials with complementary absorptions into a single junction device is regarded as an efficient way to enhance the power conversion efficiency (PCE) of organic solar cells (OSCs). However, because of increased complexity with one more component, only limited high-performance ternary systems have been demonstrated previously. Here we report an efficient ternary blend OSC with a PCE of 9.2%. We show that the third component can reduce surface trap densities in the ternary blend. Detailed studies unravel that the improved performance results from synergistic effects of enlarged open circuit voltage, suppressed trap-assisted recombination, enhanced light absorption, increased hole extraction, efficient energy transfer and better morphology. The working mechanism and high device performance demonstrate new insights and design guidelines for high-performance ternary blend solar cells and suggest that ternary structure is a promising platform to boost the efficiency of OSCs.

A self-reliant RSI payload development in Taiwan

NASA Astrophysics Data System (ADS)

Weng, Shui-Lin; Lian, Yu-Yung

2011-10-01

Instead of outsourcing the whole FORMOSAT-2 satellite to a foreign prime contractor, the National Space Organization in Taiwan is stepping ahead to take the full responsibility of consolidating self-reliant space technology capabilities. A newly initiated program FORMOSAT-5 satellite, not only to build a heritage design of a spacecraft bus but also, selfreliantly, to leap a big step toward Remote Sensing Instrument payload development, is sailing on its voyage. Among the payload development effort, an integrated circuit of the kind Complementary Metal Oxide Semiconductor instead of Charge-coupled Device is chosen as the image sensor playing the lead role for the instrument. Despite the foreseen technical concerns, management issues over scheduling and documentation are constantly emerging owing to the payload development underwent is collaborated by several domestic industries and research centers. Regardless of challenges we may confront with, a carefully planned strategy especially emphasizing on the product realization processes is considered, discussed, and implemented.

CMOS analogue amplifier circuits optimisation using hybrid backtracking search algorithm with differential evolution

NASA Astrophysics Data System (ADS)

Mallick, S.; Kar, R.; Mandal, D.; Ghoshal, S. P.

2016-07-01

This paper proposes a novel hybrid optimisation algorithm which combines the recently proposed evolutionary algorithm Backtracking Search Algorithm (BSA) with another widely accepted evolutionary algorithm, namely, Differential Evolution (DE). The proposed algorithm called BSA-DE is employed for the optimal designs of two commonly used analogue circuits, namely Complementary Metal Oxide Semiconductor (CMOS) differential amplifier circuit with current mirror load and CMOS two-stage operational amplifier (op-amp) circuit. BSA has a simple structure that is effective, fast and capable of solving multimodal problems. DE is a stochastic, population-based heuristic approach, having the capability to solve global optimisation problems. In this paper, the transistors' sizes are optimised using the proposed BSA-DE to minimise the areas occupied by the circuits and to improve the performances of the circuits. The simulation results justify the superiority of BSA-DE in global convergence properties and fine tuning ability, and prove it to be a promising candidate for the optimal design of the analogue CMOS amplifier circuits. The simulation results obtained for both the amplifier circuits prove the effectiveness of the proposed BSA-DE-based approach over DE, harmony search (HS), artificial bee colony (ABC) and PSO in terms of convergence speed, design specifications and design parameters of the optimal design of the analogue CMOS amplifier circuits. It is shown that BSA-DE-based design technique for each amplifier circuit yields the least MOS transistor area, and each designed circuit is shown to have the best performance parameters such as gain, power dissipation, etc., as compared with those of other recently reported literature.

A novel high-speed CMOS circuit based on a gang of capacitors

NASA Astrophysics Data System (ADS)

Sharroush, Sherif M.

2017-08-01

There is no doubt that complementary metal-oxide semiconductor (CMOS) circuits with wide fan-in suffers from the relatively sluggish operation. In this paper, a circuit that contains a gang of capacitors sharing their charge with each other is proposed as an alternative to long N-channel MOS and P-channel MOS stacks. The proposed scheme is investigated quantitatively and verified by simulation using the 45-nm CMOS technology with VDD = 1 V. The time delay, area and power consumption of the proposed scheme are investigated and compared with the conventional static CMOS logic circuit. It is verified that the proposed scheme achieves 52% saving in the average propagation delay for eight inputs and that it has a smaller area compared to the conventional CMOS logic when the number of inputs exceeds three and a smaller power consumption for a number of inputs exceeding two. The impacts of process variations, component mismatches and technology scaling on the proposed scheme are also investigated.

Additive manufacturing of hybrid circuits

DOE PAGES

Bell, Nelson S.; Sarobol, Pylin; Cook, Adam; ...

2016-03-26

There is a rising interest in developing functional electronics using additively manufactured components. Considerations in materials selection and pathways to forming hybrid circuits and devices must demonstrate useful electronic function; must enable integration; and must complement the complex shape, low cost, high volume, and high functionality of structural but generally electronically passive additively manufactured components. This article reviews several emerging technologies being used in industry and research/development to provide integration advantages of fabricating multilayer hybrid circuits or devices. First, we review a maskless, noncontact, direct write (DW) technology that excels in the deposition of metallic colloid inks for electrical interconnects.more » Second, we review a complementary technology, aerosol deposition (AD), which excels in the deposition of metallic and ceramic powder as consolidated, thick conformal coatings and is additionally patternable through masking. As a result, we show examples of hybrid circuits/devices integrated beyond 2-D planes, using combinations of DW or AD processes and conventional, established processes.« less

5A Zirconium Dioxide Ammonia Microsensor Integrated with a Readout Circuit Manufactured Using the 0.18 μm CMOS Process

PubMed Central

Lin, Guan-Ming; Dai, Ching-Liang; Yang, Ming-Zhi

2013-01-01

The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit. The ammonia sensor is constructed by a sensitive film and the interdigitated electrodes. The sensitive film is zirconium dioxide that is coated on the interdigitated electrodes. The heater is used to provide a working temperature to the sensitive film. A post-process is employed to remove the sacrificial layer and to coat zirconium dioxide on the sensor. When the sensitive film adsorbs or desorbs ammonia gas, the sensor produces a change in resistance. The readout circuit converts the resistance variation of the sensor into the output voltage. The experiments show that the integrated ammonia sensor has a sensitivity of 4.1 mV/ppm. PMID:23503294

EVALUATION OF NUTRITIONAL AND OPERATIONAL REQUIREMENTS FOR BIODEGRADATION OF CHLORINATED PHENOLS BY THE WHITE ROT BASIDIOMYCETE, PHANEROCHAETE CHRYSOSPORIUM IN RBC REACTORS

EPA Science Inventory

The ability to degrade and detoxify organic & inorganic constituents requires complementary features of microbial competence; the biochem. means (enzymes) to detoxify wastes and the capability of a single organism or a multiplicity of compatible organisms of complementary compete...

Broadband image sensor array based on graphene-CMOS integration

NASA Astrophysics Data System (ADS)

Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

2017-06-01

Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

High voltage power supply

NASA Technical Reports Server (NTRS)

Ruitberg, A. P.; Young, K. M. (Inventor)

1985-01-01

A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

Memristor-CMOS hybrid integrated circuits for reconfigurable logic.

PubMed

Xia, Qiangfei; Robinett, Warren; Cumbie, Michael W; Banerjee, Neel; Cardinali, Thomas J; Yang, J Joshua; Wu, Wei; Li, Xuema; Tong, William M; Strukov, Dmitri B; Snider, Gregory S; Medeiros-Ribeiro, Gilberto; Williams, R Stanley

2009-10-01

Hybrid reconfigurable logic circuits were fabricated by integrating memristor-based crossbars onto a foundry-built CMOS (complementary metal-oxide-semiconductor) platform using nanoimprint lithography, as well as materials and processes that were compatible with the CMOS. Titanium dioxide thin-film memristors served as the configuration bits and switches in a data routing network and were connected to gate-level CMOS components that acted as logic elements, in a manner similar to a field programmable gate array. We analyzed the chips using a purpose-built testing system, and demonstrated the ability to configure individual devices, use them to wire up various logic gates and a flip-flop, and then reconfigure devices.

NASA Space Engineering Research Center for VLSI systems design

NASA Technical Reports Server (NTRS)

1991-01-01

This annual review reports the center's activities and findings on very large scale integration (VLSI) systems design for 1990, including project status, financial support, publications, the NASA Space Engineering Research Center (SERC) Symposium on VLSI Design, research results, and outreach programs. Processor chips completed or under development are listed. Research results summarized include a design technique to harden complementary metal oxide semiconductors (CMOS) memory circuits against single event upset (SEU); improved circuit design procedures; and advances in computer aided design (CAD), communications, computer architectures, and reliability design. Also described is a high school teacher program that exposes teachers to the fundamentals of digital logic design.

Noise-Aided Logic in an Electronic Analog of Synthetic Genetic Networks

PubMed Central

Hellen, Edward H.; Dana, Syamal K.; Kurths, Jürgen; Kehler, Elizabeth; Sinha, Sudeshna

2013-01-01

We report the experimental verification of noise-enhanced logic behaviour in an electronic analog of a synthetic genetic network, composed of two repressors and two constitutive promoters. We observe good agreement between circuit measurements and numerical prediction, with the circuit allowing for robust logic operations in an optimal window of noise. Namely, the input-output characteristics of a logic gate is reproduced faithfully under moderate noise, which is a manifestation of the phenomenon known as Logical Stochastic Resonance. The two dynamical variables in the system yield complementary logic behaviour simultaneously. The system is easily morphed from AND/NAND to OR/NOR logic. PMID:24124531

Synergistic Synthetic Biology: Units in Concert

PubMed Central

Trosset, Jean-Yves; Carbonell, Pablo

2013-01-01

Synthetic biology aims at translating the methods and strategies from engineering into biology in order to streamline the design and construction of biological devices through standardized parts. Modular synthetic biology devices are designed by means of an adequate elimination of cross-talk that makes circuits orthogonal and specific. To that end, synthetic constructs need to be adequately optimized through in silico modeling by choosing the right complement of genetic parts and by experimental tuning through directed evolution and craftsmanship. In this review, we consider an additional and complementary tool available to the synthetic biologist for innovative design and successful construction of desired circuit functionalities: biological synergies. Synergy is a prevalent emergent property in biological systems that arises from the concerted action of multiple factors producing an amplification or cancelation effect compared with individual actions alone. Synergies appear in domains as diverse as those involved in chemical and protein activity, polypharmacology, and metabolic pathway complementarity. In conventional synthetic biology designs, synergistic cross-talk between parts and modules is generally attenuated in order to verify their orthogonality. Synergistic interactions, however, can induce emergent behavior that might prove useful for synthetic biology applications, like in functional circuit design, multi-drug treatment, or in sensing and delivery devices. Synergistic design principles are therefore complementary to those coming from orthogonal design and may provide added value to synthetic biology applications. The appropriate modeling, characterization, and design of synergies between biological parts and units will allow the discovery of yet unforeseeable, novel synthetic biology applications. PMID:25022769

Synergistic Synthetic Biology: Units in Concert.

PubMed

Trosset, Jean-Yves; Carbonell, Pablo

2013-01-01

Synthetic biology aims at translating the methods and strategies from engineering into biology in order to streamline the design and construction of biological devices through standardized parts. Modular synthetic biology devices are designed by means of an adequate elimination of cross-talk that makes circuits orthogonal and specific. To that end, synthetic constructs need to be adequately optimized through in silico modeling by choosing the right complement of genetic parts and by experimental tuning through directed evolution and craftsmanship. In this review, we consider an additional and complementary tool available to the synthetic biologist for innovative design and successful construction of desired circuit functionalities: biological synergies. Synergy is a prevalent emergent property in biological systems that arises from the concerted action of multiple factors producing an amplification or cancelation effect compared with individual actions alone. Synergies appear in domains as diverse as those involved in chemical and protein activity, polypharmacology, and metabolic pathway complementarity. In conventional synthetic biology designs, synergistic cross-talk between parts and modules is generally attenuated in order to verify their orthogonality. Synergistic interactions, however, can induce emergent behavior that might prove useful for synthetic biology applications, like in functional circuit design, multi-drug treatment, or in sensing and delivery devices. Synergistic design principles are therefore complementary to those coming from orthogonal design and may provide added value to synthetic biology applications. The appropriate modeling, characterization, and design of synergies between biological parts and units will allow the discovery of yet unforeseeable, novel synthetic biology applications.

A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose

PubMed Central

Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

2016-01-01

An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal–oxide–semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm2. The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively. PMID:27792131

A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose.

PubMed

Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

2016-10-25

An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal-oxide-semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm². The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively.

Plasmonic integrated circuits comprising metal waveguides, multiplexer/demultiplexer, detectors, and logic circuits on a silicon substrate

NASA Astrophysics Data System (ADS)

Fukuda, M.; Ota, M.; Sumimura, A.; Okahisa, S.; Ito, M.; Ishii, Y.; Ishiyama, T.

2017-05-01

A plasmonic integrated circuit configuration comprising plasmonic and electronic components is presented and the feasibility for high-speed signal processing applications is discussed. In integrated circuits, plasmonic signals transmit data at high transfer rates with light velocity. Plasmonic and electronic components such as wavelength-divisionmultiplexing (WDM) networks comprising metal wires, plasmonic multiplexers/demultiplexers, and crossing metal wires are connected via plasmonic waveguides on the nanometer or micrometer scales. To merge plasmonic and electronic components, several types of plasmonic components were developed. To ensure that the plasmonic components could be easily fabricated and monolithically integrated onto a silicon substrate using silicon complementary metal-oxide-semiconductor (CMOS)-compatible processes, the components were fabricated on a Si substrate and made from silicon, silicon oxides, and metal; no other materials were used in the fabrication. The plasmonic components operated in the 1300- and 1550-nm-wavelength bands, which are typically employed in optical fiber communication systems. The plasmonic logic circuits were formed by patterning a silicon oxide film on a metal film, and the operation as a half adder was confirmed. The computed plasmonic signals can propagate through the plasmonic WDM networks and be connected to electronic integrated circuits at high data-transfer rates.

Designing Nanoscale Counter Using Reversible Gate Based on Quantum-Dot Cellular Automata

NASA Astrophysics Data System (ADS)

Moharrami, Elham; Navimipour, Nima Jafari

2018-04-01

Some new technologies such as Quantum-dot Cellular Automata (QCA) is suggested to solve the physical limits of the Complementary Metal-Oxide Semiconductor (CMOS) technology. The QCA as one of the novel technologies at nanoscale has potential applications in future computers. This technology has some advantages such as minimal size, high speed, low latency, and low power consumption. As a result, it is used for creating all varieties of memory. Counter circuits as one of the important circuits in the digital systems are composed of some latches, which are connected to each other in series and actually they count input pulses in the circuit. On the other hand, the reversible computations are very important because of their ability in reducing energy in nanometer circuits. Improving the energy efficiency, increasing the speed of nanometer circuits, increasing the portability of system, making smaller components of the circuit in a nuclear size and reducing the power consumption are considered as the usage of reversible logic. Therefore, this paper aims to design a two-bit reversible counter that is optimized on the basis of QCA using an improved reversible gate. The proposed reversible structure of 2-bit counter can be increased to 3-bit, 4-bit and more. The advantages of the proposed design have been shown using QCADesigner in terms of the delay in comparison with previous circuits.

A silicon-on-insulator complementary-metal-oxide-semiconductor compatible flexible electronics technology

NASA Astrophysics Data System (ADS)

Tu, Hongen; Xu, Yong

2012-07-01

This paper reports a simple flexible electronics technology that is compatible with silicon-on-insulator (SOI) complementary-metal-oxide-semiconductor (CMOS) processes. Compared with existing technologies such as direct fabrication on flexible substrates and transfer printing, the main advantage of this technology is its post-SOI-CMOS compatibility. Consequently, high-performance and high-density CMOS circuits can be first fabricated on SOI wafers using commercial foundry and then be integrated into flexible substrates. The yield is also improved by eliminating the transfer printing step. Furthermore, this technology allows the integration of various sensors and microfluidic devices. To prove the concept of this technology, flexible MOSFETs have been demonstrated.

A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit.

PubMed

Chakrabarti, B; Lastras-Montaño, M A; Adam, G; Prezioso, M; Hoskins, B; Payvand, M; Madhavan, A; Ghofrani, A; Theogarajan, L; Cheng, K-T; Strukov, D B

2017-02-14

Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore's law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + "Molecular") architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit.

Implementation of an integrated op-amp based chaotic neuron model and observation of its chaotic dynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Jinwoo; Lee, Jewon; Song, Hanjung

2011-03-15

This paper presents a fully integrated circuit implementation of an operational amplifier (op-amp) based chaotic neuron model with a bipolar output function, experimental measurements, and analyses of its chaotic behavior. The proposed chaotic neuron model integrated circuit consists of several op-amps, sample and hold circuits, a nonlinear function block for chaotic signal generation, a clock generator, a nonlinear output function, etc. Based on the HSPICE (circuit program) simulation results, approximated empirical equations for analyses were formulated. Then, the chaotic dynamical responses such as bifurcation diagrams, time series, and Lyapunov exponent were calculated using these empirical equations. In addition, we performedmore » simulations about two chaotic neuron systems with four synapses to confirm neural network connections and got normal behavior of the chaotic neuron such as internal state bifurcation diagram according to the synaptic weight variation. The proposed circuit was fabricated using a 0.8-{mu}m single poly complementary metal-oxide semiconductor technology. Measurements of the fabricated single chaotic neuron with {+-}2.5 V power supplies and a 10 kHz sampling clock frequency were carried out and compared with the simulated results.« less

A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

PubMed Central

Chakrabarti, B.; Lastras-Montaño, M. A.; Adam, G.; Prezioso, M.; Hoskins, B.; Cheng, K.-T.; Strukov, D. B.

2017-01-01

Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore’s law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + “Molecular”) architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit. PMID:28195239

Theoretical analysis and simulation study of low-power CMOS electrochemical impedance spectroscopy biosensor in 55 nm deeply depleted channel technology for cell-state monitoring

NASA Astrophysics Data System (ADS)

Itakura, Keisuke; Kayano, Keisuke; Nakazato, Kazuo; Niitsu, Kiichi

2018-01-01

We present an impedance-detection complementary metal oxide semiconductor (CMOS) biosensor circuit for cell-state observation. The proposed biosensor can measure the expected impedance values encountered by a cell-state observation measurement system within a 0.1-200 MHz frequency range. The proposed device is capable of monitoring the intracellular conditions necessary for real-time cell-state observation, and can be fabricated using a 55 nm deeply depleted channel CMOS process. Operation of the biosensor circuit with 0.9 and 1.7 V supply voltages is verified via a simulated program with integrated circuit emphasis (SPICE) simulation. The power consumption is 300 µW. Further, the standby power consumption is 290 µW, indicating that this biosensor is a low-power instrument suitable for use in Internet of Things (IoT) devices.

Ethanol Microsensors with a Readout Circuit Manufactured Using the CMOS-MEMS Technique

PubMed Central

Yang, Ming-Zhi; Dai, Ching-Liang

2015-01-01

The design and fabrication of an ethanol microsensor integrated with a readout circuit on-a-chip using the complementary metal oxide semiconductor (CMOS)-microelectro-mechanical system (MEMS) technique are investigated. The ethanol sensor is made up of a heater, a sensitive film and interdigitated electrodes. The sensitive film is tin dioxide that is prepared by the sol-gel method. The heater is located under the interdigitated electrodes, and the sensitive film is coated on the interdigitated electrodes. The sensitive film needs a working temperature of 220 °C. The heater is employed to provide the working temperature of sensitive film. The sensor generates a change in capacitance when the sensitive film senses ethanol gas. A readout circuit is used to convert the capacitance variation of the sensor into the output frequency. Experiments show that the sensitivity of the ethanol sensor is 0.9 MHz/ppm. PMID:25594598

A Reconfigurable Readout Integrated Circuit for Heterogeneous Display-Based Multi-Sensor Systems

PubMed Central

Park, Kyeonghwan; Kim, Seung Mok; Eom, Won-Jin; Kim, Jae Joon

2017-01-01

This paper presents a reconfigurable multi-sensor interface and its readout integrated circuit (ROIC) for display-based multi-sensor systems, which builds up multi-sensor functions by utilizing touch screen panels. In addition to inherent touch detection, physiological and environmental sensor interfaces are incorporated. The reconfigurable feature is effectively implemented by proposing two basis readout topologies of amplifier-based and oscillator-based circuits. For noise-immune design against various noises from inherent human-touch operations, an alternate-sampling error-correction scheme is proposed and integrated inside the ROIC, achieving a 12-bit resolution of successive approximation register (SAR) of analog-to-digital conversion without additional calibrations. A ROIC prototype that includes the whole proposed functions and data converters was fabricated in a 0.18 μm complementary metal oxide semiconductor (CMOS) process, and its feasibility was experimentally verified to support multiple heterogeneous sensing functions of touch, electrocardiogram, body impedance, and environmental sensors. PMID:28368355

Sol-gel zinc oxide humidity sensors integrated with a ring oscillator circuit on-a-chip.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

2014-10-28

The study develops an integrated humidity microsensor fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated humidity sensor consists of a humidity sensor and a ring oscillator circuit on-a-chip. The humidity sensor is composed of a sensitive film and branch interdigitated electrodes. The sensitive film is zinc oxide prepared by sol-gel method. After completion of the CMOS process, the sensor requires a post-process to remove the sacrificial oxide layer and to coat the zinc oxide film on the interdigitated electrodes. The capacitance of the sensor changes when the sensitive film adsorbs water vapor. The circuit is used to convert the capacitance of the humidity sensor into the oscillation frequency output. Experimental results show that the output frequency of the sensor changes from 84.3 to 73.4 MHz at 30 °C as the humidity increases 40 to 90%RH.

A Reconfigurable Readout Integrated Circuit for Heterogeneous Display-Based Multi-Sensor Systems.

PubMed

Park, Kyeonghwan; Kim, Seung Mok; Eom, Won-Jin; Kim, Jae Joon

2017-04-03

This paper presents a reconfigurable multi-sensor interface and its readout integrated circuit (ROIC) for display-based multi-sensor systems, which builds up multi-sensor functions by utilizing touch screen panels. In addition to inherent touch detection, physiological and environmental sensor interfaces are incorporated. The reconfigurable feature is effectively implemented by proposing two basis readout topologies of amplifier-based and oscillator-based circuits. For noise-immune design against various noises from inherent human-touch operations, an alternate-sampling error-correction scheme is proposed and integrated inside the ROIC, achieving a 12-bit resolution of successive approximation register (SAR) of analog-to-digital conversion without additional calibrations. A ROIC prototype that includes the whole proposed functions and data converters was fabricated in a 0.18 μm complementary metal oxide semiconductor (CMOS) process, and its feasibility was experimentally verified to support multiple heterogeneous sensing functions of touch, electrocardiogram, body impedance, and environmental sensors.

All-optical differential equation solver with constant-coefficient tunable based on a single microring resonator.

PubMed

Yang, Ting; Dong, Jianji; Lu, Liangjun; Zhou, Linjie; Zheng, Aoling; Zhang, Xinliang; Chen, Jianping

2014-07-04

Photonic integrated circuits for photonic computing open up the possibility for the realization of ultrahigh-speed and ultra wide-band signal processing with compact size and low power consumption. Differential equations model and govern fundamental physical phenomena and engineering systems in virtually any field of science and engineering, such as temperature diffusion processes, physical problems of motion subject to acceleration inputs and frictional forces, and the response of different resistor-capacitor circuits, etc. In this study, we experimentally demonstrate a feasible integrated scheme to solve first-order linear ordinary differential equation with constant-coefficient tunable based on a single silicon microring resonator. Besides, we analyze the impact of the chirp and pulse-width of input signals on the computing deviation. This device can be compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may motivate the development of integrated photonic circuits for optical computing.

All-optical differential equation solver with constant-coefficient tunable based on a single microring resonator

PubMed Central

Yang, Ting; Dong, Jianji; Lu, Liangjun; Zhou, Linjie; Zheng, Aoling; Zhang, Xinliang; Chen, Jianping

2014-01-01

Photonic integrated circuits for photonic computing open up the possibility for the realization of ultrahigh-speed and ultra wide-band signal processing with compact size and low power consumption. Differential equations model and govern fundamental physical phenomena and engineering systems in virtually any field of science and engineering, such as temperature diffusion processes, physical problems of motion subject to acceleration inputs and frictional forces, and the response of different resistor-capacitor circuits, etc. In this study, we experimentally demonstrate a feasible integrated scheme to solve first-order linear ordinary differential equation with constant-coefficient tunable based on a single silicon microring resonator. Besides, we analyze the impact of the chirp and pulse-width of input signals on the computing deviation. This device can be compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may motivate the development of integrated photonic circuits for optical computing. PMID:24993440

Ethanol microsensors with a readout circuit manufactured using the CMOS-MEMS technique.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang

2015-01-14

The design and fabrication of an ethanol microsensor integrated with a readout circuit on-a-chip using the complementary metal oxide semiconductor (CMOS)-microelectro -mechanical system (MEMS) technique are investigated. The ethanol sensor is made up of a heater, a sensitive film and interdigitated electrodes. The sensitive film is tin dioxide that is prepared by the sol-gel method. The heater is located under the interdigitated electrodes, and the sensitive film is coated on the interdigitated electrodes. The sensitive film needs a working temperature of 220 °C. The heater is employed to provide the working temperature of sensitive film. The sensor generates a change in capacitance when the sensitive film senses ethanol gas. A readout circuit is used to convert the capacitance variation of the sensor into the output frequency. Experiments show that the sensitivity of the ethanol sensor is 0.9 MHz/ppm.

An acetone microsensor with a ring oscillator circuit fabricated using the commercial 0.18 μm CMOS process.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Shih, Po-Jen

2014-07-17

This study investigates the fabrication and characterization of an acetone microsensor with a ring oscillator circuit using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The acetone microsensor contains a sensitive material, interdigitated electrodes and a polysilicon heater. The sensitive material is α-Fe2O3 synthesized by the hydrothermal method. The sensor requires a post-process to remove the sacrificial oxide layer between the interdigitated electrodes and to coat the α-Fe2O3 on the electrodes. When the sensitive material adsorbs acetone vapor, the sensor produces a change in capacitance. The ring oscillator circuit converts the capacitance of the sensor into the oscillation frequency output. The experimental results show that the output frequency of the acetone sensor changes from 128 to 100 MHz as the acetone concentration increases 1 to 70 ppm.

An Acetone Microsensor with a Ring Oscillator Circuit Fabricated Using the Commercial 0.18 μm CMOS Process

PubMed Central

Yang, Ming-Zhi; Dai, Ching-Liang; Shih, Po-Jen

2014-01-01

This study investigates the fabrication and characterization of an acetone microsensor with a ring oscillator circuit using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The acetone microsensor contains a sensitive material, interdigitated electrodes and a polysilicon heater. The sensitive material is α-Fe2O3 synthesized by the hydrothermal method. The sensor requires a post-process to remove the sacrificial oxide layer between the interdigitated electrodes and to coat the α-Fe2O3 on the electrodes. When the sensitive material adsorbs acetone vapor, the sensor produces a change in capacitance. The ring oscillator circuit converts the capacitance of the sensor into the oscillation frequency output. The experimental results show that the output frequency of the acetone sensor changes from 128 to 100 MHz as the acetone concentration increases 1 to 70 ppm. PMID:25036331

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bell, Nelson S.; Sarobol, Pylin; Cook, Adam

There is a rising interest in developing functional electronics using additively manufactured components. Considerations in materials selection and pathways to forming hybrid circuits and devices must demonstrate useful electronic function; must enable integration; and must complement the complex shape, low cost, high volume, and high functionality of structural but generally electronically passive additively manufactured components. This article reviews several emerging technologies being used in industry and research/development to provide integration advantages of fabricating multilayer hybrid circuits or devices. First, we review a maskless, noncontact, direct write (DW) technology that excels in the deposition of metallic colloid inks for electrical interconnects.more » Second, we review a complementary technology, aerosol deposition (AD), which excels in the deposition of metallic and ceramic powder as consolidated, thick conformal coatings and is additionally patternable through masking. As a result, we show examples of hybrid circuits/devices integrated beyond 2-D planes, using combinations of DW or AD processes and conventional, established processes.« less

Theoretical comparison, equivalent transformation, and conjunction operations of electromagnetic induction generator and triboelectric nanogenerator for harvesting mechanical energy.

PubMed

Zhang, Chi; Tang, Wei; Han, Changbao; Fan, Fengru; Wang, Zhong Lin

2014-06-11

Triboelectric nanogenerator (TENG) is a newly invented technology that is effective using conventional organic materials with functionalized surfaces for converting mechanical energy into electricity, which is light weight, cost-effective and easy scalable. Here, we present the first systematic analysis and comparison of EMIG and TENG from their working mechanisms, governing equations and output characteristics, aiming at establishing complementary applications of the two technologies for harvesting various mechanical energies. The equivalent transformation and conjunction operations of the two power sources for the external circuit are also explored, which provide appropriate evidences that the TENG can be considered as a current source with a large internal resistance, while the EMIG is equivalent to a voltage source with a small internal resistance. The theoretical comparison and experimental validations presented in this paper establish the basis of using the TENG as a new energy technology that could be parallel or possibly equivalently important as the EMIG for general power application at large-scale. It opens a field of organic nanogenerator for chemists and materials scientists who can be first time using conventional organic materials for converting mechanical energy into electricity at a high efficiency. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Component-Level Electronic-Assembly Repair (CLEAR) Spacecraft Circuit Diagnostics by Analog and Complex Signature Analysis

NASA Technical Reports Server (NTRS)

Oeftering, Richard C.; Wade, Raymond P.; Izadnegahdar, Alain

2011-01-01

The Component-Level Electronic-Assembly Repair (CLEAR) project at the NASA Glenn Research Center is aimed at developing technologies that will enable space-flight crews to perform in situ component-level repair of electronics on Moon and Mars outposts, where there is no existing infrastructure for logistics spares. These technologies must provide effective repair capabilities yet meet the payload and operational constraints of space facilities. Effective repair depends on a diagnostic capability that is versatile but easy to use by crew members that have limited training in electronics. CLEAR studied two techniques that involve extensive precharacterization of "known good" circuits to produce graphical signatures that provide an easy-to-use comparison method to quickly identify faulty components. Analog Signature Analysis (ASA) allows relatively rapid diagnostics of complex electronics by technicians with limited experience. Because of frequency limits and the growing dependence on broadband technologies, ASA must be augmented with other capabilities. To meet this challenge while preserving ease of use, CLEAR proposed an alternative called Complex Signature Analysis (CSA). Tests of ASA and CSA were used to compare capabilities and to determine if the techniques provided an overlapping or complementary capability. The results showed that the methods are complementary.

PERSONAL COMPUTER MONITORS: A SCREENING EVALUATION OF VOLATILE ORGANIC EMISSIONS FROM EXISTING PRINTED CIRCUIT BOARD LAMINATES AND POTENTIAL POLLUTION PREVENTION ALTERNATIVES

EPA Science Inventory

The report gives results of a screening evaluation of volatile organic emissions from printed circuit board laminates and potential pollution prevention alternatives. In the evaluation, printed circuit board laminates, without circuitry, commonly found in personal computer (PC) m...

A neural command circuit for grooming movement control.

PubMed

Hampel, Stefanie; Franconville, Romain; Simpson, Julie H; Seeds, Andrew M

2015-09-07

Animals perform many stereotyped movements, but how nervous systems are organized for controlling specific movements remains unclear. Here we use anatomical, optogenetic, behavioral, and physiological techniques to identify a circuit in Drosophila melanogaster that can elicit stereotyped leg movements that groom the antennae. Mechanosensory chordotonal neurons detect displacements of the antennae and excite three different classes of functionally connected interneurons, which include two classes of brain interneurons and different parallel descending neurons. This multilayered circuit is organized such that neurons within each layer are sufficient to specifically elicit antennal grooming. However, we find differences in the durations of antennal grooming elicited by neurons in the different layers, suggesting that the circuit is organized to both command antennal grooming and control its duration. As similar features underlie stimulus-induced movements in other animals, we infer the possibility of a common circuit organization for movement control that can be dissected in Drosophila.

Maximizing the short circuit current of organic solar cells by partial decoupling of electrical and optical properties

NASA Astrophysics Data System (ADS)

Qarony, Wayesh; Hossain, Mohammad I.; Jovanov, Vladislav; Knipp, Dietmar; Tsang, Yuen Hong

2018-03-01

The partial decoupling of electronic and optical properties of organic solar cells allows for realizing solar cells with increased short circuit current and energy conversion efficiency. The proposed device consists of an organic solar cell conformally prepared on the surface of an array of single and double textured pyramids. The device geometry allows for increasing the optical thickness of the organic solar cell, while the electrical thickness is equal to the nominal thickness of the solar cell. By increasing the optical thickness of the solar cell, the short circuit current is distinctly increased. The quantum efficiency and short circuit current are determined using finite-difference time-domain simulations of the 3D solar cell structure. The influence of different solar cell designs on the quantum efficiency and short circuit current is discussed and optimal device dimensions are proposed.

Monitoring microbial metabolites using an inductively coupled resonance circuit

NASA Astrophysics Data System (ADS)

Karnaushenko, Daniil; Baraban, Larysa; Ye, Dan; Uguz, Ilke; Mendes, Rafael G.; Rümmeli, Mark H.; de Visser, J. Arjan G. M.; Schmidt, Oliver G.; Cuniberti, Gianaurelio; Makarov, Denys

2015-08-01

We present a new approach to monitor microbial population dynamics in emulsion droplets via changes in metabolite composition, using an inductively coupled LC resonance circuit. The signal measured by such resonance detector provides information on the magnetic field interaction with the bacterial culture, which is complementary to the information accessible by other detection means, based on electric field interaction, i.e. capacitive or resistive, as well as optical techniques. Several charge-related factors, including pH and ammonia concentrations, were identified as possible contributors to the characteristic of resonance detector profile. The setup enables probing the ionic byproducts of microbial metabolic activity at later stages of cell growth, where conventional optical detection methods have no discriminating power.

Entrainment and high-density three-dimensional mapping in right atrial macroreentry provide critical complementary information: Entrainment may unmask "visual reentry" as passive.

PubMed

Pathik, Bhupesh; Lee, Geoffrey; Nalliah, Chrishan; Joseph, Stephen; Morton, Joseph B; Sparks, Paul B; Sanders, Prashanthan; Kistler, Peter M; Kalman, Jonathan M

2017-10-01

With the recent advent of high-density (HD) 3-dimensional (3D) mapping, the utility of entrainment is uncertain. However, the limitations of visual representation and interpretation of these high-resolution 3D maps are unclear. The purpose of this study was to determine the strengths and limitations of both HD 3D mapping and entrainment mapping during mapping of right atrial macroreentry. Fifteen patients were studied. The number and type of circuits accounting for ≥90% of the tachycardia cycle length using HD 3D mapping were verified using systematic entrainment mapping. Entrainment sites with an unexpectedly long postpacing interval despite proximity to the active circuit were evaluated. Based on HD 3D mapping, 27 circuits were observed: 12 peritricuspid, 2 upper loop reentry, 10 lower loop reentry, and 3 lateral wall circuits. With entrainment, 17 of the 27 circuits were active: all 12 peritricuspid and 2 upper loop reentry. However, lower loop reentry was confirmed in only 3 of 10, and none of the 3 lateral wall circuits were present. Mean percentage of tachycardia cycle length covered by active circuits was 98% ± 1% vs 97% ± 2% for passive circuits (P = .09). None of the 345 entrainment runs terminated tachycardia or changed tachycardia mechanism. In 8 of 15 patients, 13 examples of unexpectedly long postpacing interval were observed at entrainment sites located distal to localized zones of slow conduction seen on HD 3D mapping. Using HD 3D mapping, "visual reentry" may be due to passive circuitous propagation rather than a critical reentrant circuit. HD 3D mapping provides new insights into regional conduction and helps explain unusual entrainment phenomena. Copyright © 2017 Heart Rhythm Society. Published by Elsevier Inc. All rights reserved.

Chip-integrated optical power limiter based on an all-passive micro-ring resonator

NASA Astrophysics Data System (ADS)

Yan, Siqi; Dong, Jianji; Zheng, Aoling; Zhang, Xinliang

2014-10-01

Recent progress in silicon nanophotonics has dramatically advanced the possible realization of large-scale on-chip optical interconnects integration. Adopting photons as information carriers can break the performance bottleneck of electronic integrated circuit such as serious thermal losses and poor process rates. However, in integrated photonics circuits, few reported work can impose an upper limit of optical power therefore prevent the optical device from harm caused by high power. In this study, we experimentally demonstrate a feasible integrated scheme based on a single all-passive micro-ring resonator to realize the optical power limitation which has a similar function of current limiting circuit in electronics. Besides, we analyze the performance of optical power limiter at various signal bit rates. The results show that the proposed device can limit the signal power effectively at a bit rate up to 20 Gbit/s without deteriorating the signal. Meanwhile, this ultra-compact silicon device can be completely compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may pave the way of very large scale integrated photonic circuits for all-optical information processors and artificial intelligence systems.

A Circuit-Based Neural Network with Hybrid Learning of Backpropagation and Random Weight Change Algorithms

PubMed Central

Yang, Changju; Kim, Hyongsuk; Adhikari, Shyam Prasad; Chua, Leon O.

2016-01-01

A hybrid learning method of a software-based backpropagation learning and a hardware-based RWC learning is proposed for the development of circuit-based neural networks. The backpropagation is known as one of the most efficient learning algorithms. A weak point is that its hardware implementation is extremely difficult. The RWC algorithm, which is very easy to implement with respect to its hardware circuits, takes too many iterations for learning. The proposed learning algorithm is a hybrid one of these two. The main learning is performed with a software version of the BP algorithm, firstly, and then, learned weights are transplanted on a hardware version of a neural circuit. At the time of the weight transplantation, a significant amount of output error would occur due to the characteristic difference between the software and the hardware. In the proposed method, such error is reduced via a complementary learning of the RWC algorithm, which is implemented in a simple hardware. The usefulness of the proposed hybrid learning system is verified via simulations upon several classical learning problems. PMID:28025566

Microelectromechanical accelerometer with resonance-cancelling control circuit including an idle state

DOEpatents

Chu, Dahlon D.; Thelen, Jr., Donald C.; Campbell, David V.

2001-01-01

A digital feedback control circuit is disclosed for use in an accelerometer (e.g. a microelectromechanical accelerometer). The digital feedback control circuit, which periodically re-centers a proof mass in response to a sensed acceleration, is based on a sigma-delta (.SIGMA..DELTA.) configuration that includes a notch filter (e.g. a digital switched-capacitor filter) for rejecting signals due to mechanical resonances of the proof mass and further includes a comparator (e.g. a three-level comparator). The comparator generates one of three possible feedback states, with two of the feedback states acting to re-center the proof mass when that is needed, and with a third feedback state being an "idle" state which does not act to move the proof mass when no re-centering is needed. Additionally, the digital feedback control system includes an auto-zero trim capability for calibration of the accelerometer for accurate sensing of acceleration. The digital feedback control circuit can be fabricated using complementary metal-oxide semiconductor (CMOS) technology, bi-CMOS technology or bipolar technology and used in single- and dual-proof-mass accelerometers.

Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes.

PubMed

Cao, Xuan; Cao, Yu; Zhou, Chongwu

2016-01-26

Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 μm. In addition, the resulted transistors show mobility up to 12.04 cm(2) V(-1) S(-1), high on-off ratio (∼10(6)), ultralight weight (<3 g/m(2)), and good mechanical robustness (accommodating severe crumpling and 67% compressive strain). Furthermore, the nanotube circuits can operate properly with 33% compressive strain. On the basis of the aforementioned features, our ultraflexible p-type nanotube transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics.

Advanced lesion symptom mapping analyses and implementation as BCBtoolkit

PubMed Central

Foulon, Chris; Cerliani, Leonardo; Kinkingnéhun, Serge; Levy, Richard; Rosso, Charlotte; Urbanski, Marika

2018-01-01

Abstract Background Patients with brain lesions provide a unique opportunity to understand the functioning of the human mind. However, even when focal, brain lesions have local and remote effects that impact functionally and structurally connected circuits. Similarly, function emerges from the interaction between brain areas rather than their sole activity. For instance, category fluency requires the associations between executive, semantic, and language production functions. Findings Here, we provide, for the first time, a set of complementary solutions for measuring the impact of a given lesion on the neuronal circuits. Our methods, which were applied to 37 patients with a focal frontal brain lesions, revealed a large set of directly and indirectly disconnected brain regions that had significantly impacted category fluency performance. The directly disconnected regions corresponded to areas that are classically considered as functionally engaged in verbal fluency and categorization tasks. These regions were also organized into larger directly and indirectly disconnected functional networks, including the left ventral fronto-parietal network, whose cortical thickness correlated with performance on category fluency. Conclusions The combination of structural and functional connectivity together with cortical thickness estimates reveal the remote effects of brain lesions, provide for the identification of the affected networks, and strengthen our understanding of their relationship with cognitive and behavioral measures. The methods presented are available and freely accessible in the BCBtoolkit as supplementary software [1]. PMID:29432527

Complementary p- and n-type polymer doping for ambient stable graphene inverter.

PubMed

Yun, Je Moon; Park, Seokhan; Hwang, Young Hwan; Lee, Eui-Sup; Maiti, Uday; Moon, Hanul; Kim, Bo-Hyun; Bae, Byeong-Soo; Kim, Yong-Hyun; Kim, Sang Ouk

2014-01-28

Graphene offers great promise to complement the inherent limitations of silicon electronics. To date, considerable research efforts have been devoted to complementary p- and n-type doping of graphene as a fundamental requirement for graphene-based electronics. Unfortunately, previous efforts suffer from undesired defect formation, poor controllability of doping level, and subtle environmental sensitivity. Here we present that graphene can be complementary p- and n-doped by simple polymer coating with different dipolar characteristics. Significantly, spontaneous vertical ordering of dipolar pyridine side groups of poly(4-vinylpyridine) at graphene surface can stabilize n-type doping at room-temperature ambient condition. The dipole field also enhances and balances the charge mobility by screening the impurity charge effect from the bottom substrate. We successfully demonstrate ambient stable inverters by integrating p- and n-type graphene transistors, which demonstrated clear voltage inversion with a gain of 0.17 at a 3.3 V input voltage. This straightforward polymer doping offers diverse opportunities for graphene-based electronics, including logic circuits, particularly in mechanically flexible form.

Micro-electro-mechanically switchable near infrared complementary metamaterial absorber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pitchappa, Prakash; Pei Ho, Chong; Institute of Microelectronics

2014-05-19

We experimentally demonstrate a micro-electro-mechanically switchable near infrared complementary metamaterial absorber by integrating the metamaterial layer to be the out of plane movable microactuator. The metamaterial layer is electrostatically actuated by applying voltage across the suspended complementary metamaterial layer and the stationary bottom metallic reflector. Thus, the effective spacing between the metamaterial layer and bottom metal reflector is varied as a function of applied voltage. With the reduction of effective spacing between the metamaterial and reflector layers, a strong spectral blue shift in the peak absorption wavelength can be achieved. With spacing change of 300 nm, the spectral shift of 0.7 μmmore » in peak absorption wavelength was obtained for near infrared spectral region. The electro-optic switching performance of the device was characterized, and a striking switching contrast of 1500% was achieved at 2.1 μm. The reported micro-electro-mechanically tunable complementary metamaterial absorber device can potentially enable a wide range of high performance electro-optical devices, such as continuously tunable filters, modulators, and electro-optic switches that form the key components to facilitate future photonic circuit applications.« less

A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.

PubMed

Cho, Ah-Jin; Park, Kee Chan; Kwon, Jang-Yeon

2015-01-01

For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in practical applications, particularly in logic circuits. Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility. Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor. The advantages provided by the complementary metal-oxide-semiconductor (CMOS) configuration and the high-performance TMD channels allow us to fabricate a TMD complementary inverter that has a high-gain of 13.7. This work demonstrates the operation of the MoS2 n-FET and WSe2 p-FET on the same substrate, and the electrical performance of the CMOS inverter, which is based on a different driving current, is also measured.

Fault tolerant system based on IDDQ testing

NASA Astrophysics Data System (ADS)

Guibane, Badi; Hamdi, Belgacem; Mtibaa, Abdellatif; Bensalem, Brahim

2018-06-01

Offline test is essential to ensure good manufacturing quality. However, for permanent or transient faults that occur during the use of the integrated circuit in an application, an online integrated test is needed as well. This procedure should ensure the detection and possibly the correction or the masking of these faults. This requirement of self-correction is sometimes necessary, especially in critical applications that require high security such as automotive, space or biomedical applications. We propose a fault-tolerant design for analogue and mixed-signal design complementary metal oxide (CMOS) circuits based on the quiescent current supply (IDDQ) testing. A defect can cause an increase in current consumption. IDDQ testing technique is based on the measurement of power supply current to distinguish between functional and failed circuits. The technique has been an effective testing method for detecting physical defects such as gate-oxide shorts, floating gates (open) and bridging defects in CMOS integrated circuits. An architecture called BICS (Built In Current Sensor) is used for monitoring the supply current (IDDQ) of the connected integrated circuit. If the measured current is not within the normal range, a defect is signalled and the system switches connection from the defective to a functional integrated circuit. The fault-tolerant technique is composed essentially by a double mirror built-in current sensor, allowing the detection of abnormal current consumption and blocks allowing the connection to redundant circuits, if a defect occurs. Spices simulations are performed to valid the proposed design.

Column-parallel correlated multiple sampling circuits for CMOS image sensors and their noise reduction effects.

PubMed

Suh, Sungho; Itoh, Shinya; Aoyama, Satoshi; Kawahito, Shoji

2010-01-01

For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors. This paper presents column-parallel high-gain signal readout circuits, correlated multiple sampling (CMS) circuits and their noise reduction effects. In the CMS, the gain of the noise cancelling is controlled by the number of samplings. It has a similar effect to that of an amplified CDS for the thermal noise but is a little more effective for 1/f and RTS noises. Two types of the CMS with simple integration and folding integration are proposed. In the folding integration, the output signal swing is suppressed by a negative feedback using a comparator and one-bit D-to-A converter. The CMS circuit using the folding integration technique allows to realize a very low-noise level while maintaining a wide dynamic range. The noise reduction effects of their circuits have been investigated with a noise analysis and an implementation of a 1Mpixel pinned photodiode CMOS image sensor. Using 16 samplings, dynamic range of 59.4 dB and noise level of 1.9 e(-) for the simple integration CMS and 75 dB and 2.2 e(-) for the folding integration CMS, respectively, are obtained.

Carbon nanotube macroelectronics

NASA Astrophysics Data System (ADS)

Zhang, Jialu

In this dissertation, I discuss the application of carbon nanotubes in macroelectronis. Due to the extraordinary electrical properties such as high intrinsic carrier mobility and current-carrying capacity, single wall carbon nanotubes are very desirable for thin-film transistor (TFT) applications such as flat panel display, transparent electronics, as well as flexible and stretchable electronics. Compared with other popular channel material for TFTs, namely amorphous silicon, polycrystalline silicon and organic materials, nanotube thin-films have the advantages of low-temperature processing compatibility, transparency, and flexibility, as well as high device performance. In order to demonstrate scalable, practical carbon nanotube macroelectroncis, I have developed a platform to fabricate high-density, uniform separated nanotube based thin-film transistors. In addition, many other essential analysis as well as technology components, such as nanotube film density control, purity and diameter dependent semiconducting nanotube electrical performance study, air-stable n-type transistor fabrication, and CMOS integration platform have also been demonstrated. On the basis of the above achievement, I have further demonstrated various kinds of applications including AMOLED display electronics, PMOS and CMOS logic circuits, flexible and transparent electronics. The dissertation is structured as follows. First, chapter 1 gives a brief introduction to the electronic properties of carbon nanotubes, which serves as the background knowledge for the following chapters. In chapter 2, I will present our approach of fabricating wafer-scale uniform semiconducting carbon nanotube thin-film transistors and demonstrate their application in display electronics and logic circuits. Following that, more detailed information about carbon nanotube thin-film transistor based active matrix organic light-emitting diode (AMOLED) displays is discussed in chapter 3. And in chapter 4, a technology to fabricate air-stable n-type semiconducting nanotube thin-film transistor is developed and complementary metal--oxide--semiconductor (CMOS) logic circuits are demonstrated. Chapter 5 discusses the application of carbon nanotubes in transparent and flexible electronics. After that, in chapter 6, a simple and low cost nanotube separation method is introduced and the electrical performance of separated nanotubes with different diameter is studied. Finally, in chapter 7 a brief summary is drawn and some future research directions are proposed with preliminary results.

Surface acoustic waves in one-dimensional piezoelectric-metallic phononic crystal: Effect of a cap layer.

PubMed

Alami, M; El Boudouti, E H; Djafari-Rouhani, B; El Hassouani, Y; Talbi, A

2018-06-18

We study the propagation of transverse acoustic waves associated with the surface of a semi-infinite superlattice (SL) composed of piezoelectric-metallic layers and capped with a piezoelectric layer. We present closed-form expressions for localized surface waves, the so-called Bleustein-Gulyaev (BG) waves depending on whether the cap layer is open-circuited or short-circuited. These expressions are obtained by means of the Green's function method which enables to deduce also the densities of states. These theoretical results are illustrated by a few numerical applications to SLs made of piezoelectric layers of hexagonal symmetry belonging to the 6 mm class such as PZT4 and ZnO in contact with metallic layers such as Fe, Al, Au, Cu and boron-doped-diamond. We demonstrate a rule about the existence of surface modes when considering two complementary semi-infinite SLs obtained by the cleavage of an infinite SL along a plane parallel to the piezoelectric layers. Indeed, when the surface layers are open-circuited, one obtains one surface mode per gap, this mode is associated with one of the two complementary SLs. However, when the surface layers are short-circuited, this rule is not fulfilled and one can obtain zero, one or two modes inside each gap of the two complementary SLs depending on the position of the plane where the cleavage is produced. We show that in addition to the BG surface waves localized at the surface of the cap layer, there may exist true guided waves and pseudo-guided waves (i.e. leaky waves) induced by the cap layer either inside the gaps or inside the bands of the SL respectively. Also, we highlight the possibility of existence of interface modes between the SL and a cap layer as well as an interaction between these modes and the BG surface mode when both modes fall in the same band gaps of the SL. The strength of the interaction depends on the width of the cap layer. Finally, we show that the electromechanical coupling coefficient (ECC) is very sensitive to the cap layer thickness, in particular we calculate and discuss the behavior of the ECC as a function of the adlayer thickness for the low velocity surface modes of the SL which exhibit the highest ECC values. The effect of the nature of the metallic layers inside the SL on the ECC is also investigated. The different surface modes discussed in this work should have applications in sensing applications. Copyright © 2018. Published by Elsevier B.V.

Homeostasis of Complementary Pair Theory: Ecological Comparisons in Diverse Universal Design for Learning Environments

ERIC Educational Resources Information Center

Ianneo, Brittany

2014-01-01

Accommodation~assimilation relations were theorized by Kelso and Engstrom (2006) as independent and dependent complementary pairs. This study defined relationships between organisms that experienced complementary interactions of accommodation~assimilation in diverse ecologies designed with universal design for learning environments (UDLE) compared…

ICT, complementary investment, and firm performance in China

NASA Astrophysics Data System (ADS)

Sun, Linlin; Ding, Juan; Fan, Maoqing

2011-12-01

Using China firm data about ICT, we provide some insight into the link between ICT, productivity and complementary investment. The results show that the contribution of ICT capital deepening is raised when firms combine ICT use and some complementary investment (human capital, innovation and organization change).

A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Gutiérrez-Heredia, G.; González, L. A.; Alshareef, H. N.; Gnade, B. E.; Quevedo-López, M.

2010-11-01

We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 µA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 µA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas 'parylene only' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented.

High-performance ternary blend polymer solar cells involving both energy transfer and hole relay processes

DOE PAGES

Lu, Luyao; Chen, Wei; Xu, Tao; ...

2015-06-04

The integration of multiple materials with complementary absorptions into a single junction device is regarded as an efficient way to enhance the power conversion efficiency (PCE) of organic solar cells (OSCs). However, because of increased complexity with one more component, only limited high-performance ternary systems have been demonstrated previously. Here we report an efficient ternary blend OSC with a PCE of 9.2%. We show that the third component can reduce surface trap densities in the ternary blend. Detailed studies unravel that the improved performance results from synergistic effects of enlarged open circuit voltage, suppressed trap-assisted recombination, enhanced light absorption, increasedmore » hole extraction, efficient energy transfer and better morphology. As a result, the working mechanism and high device performance demonstrate new insights and design guidelines for high-performance ternary blend solar cells and suggest that ternary structure is a promising platform to boost the efficiency of OSCs.« less

Development of Integrated Preamplifier for High-Frequency Ultrasonic Transducers and Low-Power Handheld Receiver

PubMed Central

Choi, Hojong; Li, Xiang; Lau, Sien-Ting; Hu, ChangHong; Zhou, Qifa; Shung, K. Kirk

2012-01-01

This paper describes the design of a front-end circuit consisting of an integrated preamplifier with a Sallen-Key Butterworth filter for very-high-frequency ultrasonic transducers and a low-power handheld receiver. This preamplifier was fabricated using a 0.18-μm 7WL SiGe bi-polar complementary metal oxide semiconductor (BiCMOS) process. The Sallen-Key filter is used to increase the voltage gain of the front-end circuit for high-frequency transducers which are generally low in sensitivity. The measured peak voltage gain of the frontend circuits for the BiCMOS preamplifier with the Sallen-Key filter was 41.28 dB at 100 MHz with a −6-dB bandwidth of 91%, and the dc power consumption of the BiCMOS preamplifier was 49.53 mW. The peak voltage gain of the front-end circuits for the CMOS preamplifier with the Sallen-Key filter was 39.52 dB at 100 MHz with a −6-dB bandwidth of 108%, and the dc power consumption of the CMOS preamplifier was 43.57 mW. Pulse-echo responses and wire phantom images with a single-element ultrasonic transducer have been acquired to demonstrate the performance of the front-end circuit. PMID:23443700

Laminar circuit organization and response modulation in mouse visual cortex

PubMed Central

Olivas, Nicholas D.; Quintanar-Zilinskas, Victor; Nenadic, Zoran; Xu, Xiangmin

2012-01-01

The mouse has become an increasingly important animal model for visual system studies, but few studies have investigated local functional circuit organization of mouse visual cortex. Here we used our newly developed mapping technique combining laser scanning photostimulation (LSPS) with fast voltage-sensitive dye (VSD) imaging to examine the spatial organization and temporal dynamics of laminar circuit responses in living slice preparations of mouse primary visual cortex (V1). During experiments, LSPS using caged glutamate provided spatially restricted neuronal activation in a specific cortical layer, and evoked responses from the stimulated layer to its functionally connected regions were detected by VSD imaging. In this study, we first provided a detailed analysis of spatiotemporal activation patterns at specific V1 laminar locations and measured local circuit connectivity. Then we examined the role of cortical inhibition in the propagation of evoked cortical responses by comparing circuit activity patterns in control and in the presence of GABAa receptor antagonists. We found that GABAergic inhibition was critical in restricting layer-specific excitatory activity spread and maintaining topographical projections. In addition, we investigated how AMPA and NMDA receptors influenced cortical responses and found that blocking AMPA receptors abolished interlaminar functional projections, and the NMDA receptor activity was important in controlling visual cortical circuit excitability and modulating activity propagation. The NMDA receptor antagonist reduced neuronal population activity in time-dependent and laminar-specific manners. Finally, we used the quantitative information derived from the mapping experiments and presented computational modeling analysis of V1 circuit organization. Taken together, the present study has provided important new information about mouse V1 circuit organization and response modulation. PMID:23060751

Development of a mass sensitive quartz crystal microbalance (QCM)-based DNA biosensor using a 50 MHz electronic oscillator circuit.

PubMed

García-Martinez, Gonzalo; Bustabad, Enrique Alonso; Perrot, Hubert; Gabrielli, Claude; Bucur, Bogdan; Lazerges, Mathieu; Rose, Daniel; Rodriguez-Pardo, Loreto; Fariña, Jose; Compère, Chantal; Vives, Antonio Arnau

2011-01-01

This work deals with the design of a high sensitivity DNA sequence detector using a 50 MHz quartz crystal microbalance (QCM) electronic oscillator circuit. The oscillator circuitry is based on Miller topology, which is able to work in damping media. Calibration and experimental study of frequency noise are carried out, finding that the designed sensor has a resolution of 7.1 ng/cm(2) in dynamic conditions (with circulation of liquid). Then the oscillator is proved as DNA biosensor. Results show that the system is able to detect the presence of complementary target DNAs in a solution with high selectivity and sensitivity. DNA target concentrations higher of 50 ng/mL can be detected.

Monitoring microbial metabolites using an inductively coupled resonance circuit

PubMed Central

Karnaushenko, Daniil; Baraban, Larysa; Ye, Dan; Uguz, Ilke; Mendes, Rafael G.; Rümmeli, Mark H.; de Visser, J. Arjan G. M.; Schmidt, Oliver G.; Cuniberti, Gianaurelio; Makarov, Denys

2015-01-01

We present a new approach to monitor microbial population dynamics in emulsion droplets via changes in metabolite composition, using an inductively coupled LC resonance circuit. The signal measured by such resonance detector provides information on the magnetic field interaction with the bacterial culture, which is complementary to the information accessible by other detection means, based on electric field interaction, i.e. capacitive or resistive, as well as optical techniques. Several charge-related factors, including pH and ammonia concentrations, were identified as possible contributors to the characteristic of resonance detector profile. The setup enables probing the ionic byproducts of microbial metabolic activity at later stages of cell growth, where conventional optical detection methods have no discriminating power. PMID:26264183

Active-Pixel Image Sensor With Analog-To-Digital Converters

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.

1995-01-01

Proposed single-chip integrated-circuit image sensor contains 128 x 128 array of active pixel sensors at 50-micrometer pitch. Output terminals of all pixels in each given column connected to analog-to-digital (A/D) converter located at bottom of column. Pixels scanned in semiparallel fashion, one row at time; during time allocated to scanning row, outputs of all active pixel sensors in row fed to respective A/D converters. Design of chip based on complementary metal oxide semiconductor (CMOS) technology, and individual circuit elements fabricated according to 2-micrometer CMOS design rules. Active pixel sensors designed to operate at video rate of 30 frames/second, even at low light levels. A/D scheme based on first-order Sigma-Delta modulation.

Dispensable, Redundant, Complementary, and Cooperative Roles of Dopamine, Octopamine, and Serotonin in Drosophila melanogaster

PubMed Central

Chen, Audrey; Ng, Fanny; Lebestky, Tim; Grygoruk, Anna; Djapri, Christine; Lawal, Hakeem O.; Zaveri, Harshul A.; Mehanzel, Filmon; Najibi, Rod; Seidman, Gabriel; Murphy, Niall P.; Kelly, Rachel L.; Ackerson, Larry C.; Maidment, Nigel T.; Jackson, F. Rob; Krantz, David E.

2013-01-01

To investigate the regulation of Drosophila melanogaster behavior by biogenic amines, we have exploited the broad requirement of the vesicular monoamine transporter (VMAT) for the vesicular storage and exocytotic release of all monoamine neurotransmitters. We used the Drosophila VMAT (dVMAT) null mutant to globally ablate exocytotic amine release and then restored DVMAT activity in either individual or multiple aminergic systems, using transgenic rescue techniques. We find that larval survival, larval locomotion, and female fertility rely predominantly on octopaminergic circuits with little apparent input from the vesicular release of serotonin or dopamine. In contrast, male courtship and fertility can be rescued by expressing DVMAT in octopaminergic or dopaminergic neurons, suggesting potentially redundant circuits. Rescue of major aspects of adult locomotion and startle behavior required octopamine, but a complementary role was observed for serotonin. Interestingly, adult circadian behavior could not be rescued by expression of DVMAT in a single subtype of aminergic neurons, but required at least two systems, suggesting the possibility of unexpected cooperative interactions. Further experiments using this model will help determine how multiple aminergic systems may contribute to the regulation of other behaviors. Our data also highlight potential differences between behaviors regulated by standard exocytotic release and those regulated by other mechanisms. PMID:23086220

Use of complementary and alternative medicine by pediatric patients with functional and organic gastrointestinal diseases: results from a multicenter survey.

PubMed

Vlieger, Arine M; Blink, Marjolein; Tromp, Ellen; Benninga, Marc A

2008-08-01

Many pediatric patients use complementary and alternative medicine, especially when facing a chronic illness for which treatment options are limited. So far, research on the use of complementary and alternative medicine in patients with functional gastrointestinal disease has been scarce. This study was designed to assess complementary and alternative medicine use in children with different gastrointestinal diseases, including functional disorders, to determine which factors predicted complementary and alternative medicine use and to assess the willingness of parents to participate in future studies on complementary and alternative medicine efficacy and safety. The prevalence of complementary and alternative medicine use was assessed by using a questionnaire for 749 children visiting pediatric gastroenterology clinics of 9 hospitals in the Netherlands. The questionnaire consisted of 35 questions on the child's gastrointestinal disease, medication use, health status, past and future complementary and alternative medicine use, reasons for its use, and the necessity of complementary and alternative medicine research. In this study population, the frequency of complementary and alternative medicine use was 37.6%. A total of 60.3% of this group had used complementary and alternative medicine specifically for their gastrointestinal disease. This specific complementary and alternative medicine use was higher in patients with functional disorders than organic disorders (25.3% vs 17.2%). Adverse effects of allopathic medication, school absenteeism, age

Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique

PubMed Central

Liu, Mao-Chen; Dai, Ching-Liang; Chan, Chih-Hua; Wu, Chyan-Chyi

2009-01-01

This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature. PMID:22399944

Commercialisation of CMOS integrated circuit technology in multi-electrode arrays for neuroscience and cell-based biosensors.

PubMed

Graham, Anthony H D; Robbins, Jon; Bowen, Chris R; Taylor, John

2011-01-01

The adaptation of standard integrated circuit (IC) technology as a transducer in cell-based biosensors in drug discovery pharmacology, neural interface systems and electrophysiology requires electrodes that are electrochemically stable, biocompatible and affordable. Unfortunately, the ubiquitous Complementary Metal Oxide Semiconductor (CMOS) IC technology does not meet the first of these requirements. For devices intended only for research, modification of CMOS by post-processing using cleanroom facilities has been achieved. However, to enable adoption of CMOS as a basis for commercial biosensors, the economies of scale of CMOS fabrication must be maintained by using only low-cost post-processing techniques. This review highlights the methodologies employed in cell-based biosensor design where CMOS-based integrated circuits (ICs) form an integral part of the transducer system. Particular emphasis will be placed on the application of multi-electrode arrays for in vitro neuroscience applications. Identifying suitable IC packaging methods presents further significant challenges when considering specific applications. The various challenges and difficulties are reviewed and some potential solutions are presented.

Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique.

PubMed

Liu, Mao-Chen; Dai, Ching-Liang; Chan, Chih-Hua; Wu, Chyan-Chyi

2009-01-01

This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature.

UHF front-end feeding RFID-based body sensor networks by exploiting the reader signal

NASA Astrophysics Data System (ADS)

Pasca, M.; Colella, R.; Catarinucci, L.; Tarricone, L.; D'Amico, S.; Baschirotto, A.

2016-05-01

This paper presents an integrated, high-sensitivity UHF radio frequency identification (RFID) power management circuit for body sensor network applications. The circuit consists of a two-stage RF-DC Dickson's rectifier followed by an integrated five-stage DC-DC Pelliconi's charge pump driven by an ultralow start-up voltage LC oscillator. The DC-DC charge pump interposed between the RF-DC rectifier and the output load provides the RF to load isolation avoiding losses due to the diodes reverse saturation current. The RF-DC rectifier has been realized on FR4 substrate, while the charge pump and the oscillator have been realized in 180 nm complementary metal oxide semiconductor (CMOS) technology. Outdoor measurements demonstrate the ability of the power management circuit to provide 400 mV output voltage at 14 m distance from the UHF reader, in correspondence of -25 dBm input signal power. As demonstrated in the literature, such output voltage level is suitable to supply body sensor network nodes.

An ultra low-power CMOS automatic action potential detector.

PubMed

Gosselin, Benoit; Sawan, Mohamad

2009-08-01

We present a low-power complementary metal-oxide semiconductor (CMOS) analog integrated biopotential detector intended for neural recording in wireless multichannel implants. The proposed detector can achieve accurate automatic discrimination of action potential (APs) from the background activity by means of an energy-based preprocessor and a linear delay element. This strategy improves detected waveforms integrity and prompts for better performance in neural prostheses. The delay element is implemented with a low-power continuous-time filter using a ninth-order equiripple allpass transfer function. All circuit building blocks use subthreshold OTAs employing dedicated circuit techniques for achieving ultra low-power and high dynamic range. The proposed circuit function in the submicrowatt range as the implemented CMOS 0.18- microm chip dissipates 780 nW, and it features a size of 0.07 mm(2). So it is suitable for massive integration in a multichannel device with modest overhead. The fabricated detector succeeds to automatically detect APs from underlying background activity. Testbench validation results obtained with synthetic neural waveforms are presented.

Sol-Gel Zinc Oxide Humidity Sensors Integrated with a Ring Oscillator Circuit On-a-Chip

PubMed Central

Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

2014-01-01

The study develops an integrated humidity microsensor fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated humidity sensor consists of a humidity sensor and a ring oscillator circuit on-a-chip. The humidity sensor is composed of a sensitive film and branch interdigitated electrodes. The sensitive film is zinc oxide prepared by sol-gel method. After completion of the CMOS process, the sensor requires a post-process to remove the sacrificial oxide layer and to coat the zinc oxide film on the interdigitated electrodes. The capacitance of the sensor changes when the sensitive film adsorbs water vapor. The circuit is used to convert the capacitance of the humidity sensor into the oscillation frequency output. Experimental results show that the output frequency of the sensor changes from 84.3 to 73.4 MHz at 30 °C as the humidity increases 40 to 90 %RH. PMID:25353984

An Optimized Three-Level Design of Decoder Based on Nanoscale Quantum-Dot Cellular Automata

NASA Astrophysics Data System (ADS)

Seyedi, Saeid; Navimipour, Nima Jafari

2018-03-01

Quantum-dot Cellular Automata (QCA) has been potentially considered as a supersede to Complementary Metal-Oxide-Semiconductor (CMOS) because of its inherent advantages. Many QCA-based logic circuits with smaller feature size, improved operating frequency, and lower power consumption than CMOS have been offered. This technology works based on electron relations inside quantum-dots. Due to the importance of designing an optimized decoder in any digital circuit, in this paper, we design, implement and simulate a new 2-to-4 decoder based on QCA with low delay, area, and complexity. The logic functionality of the 2-to-4 decoder is verified using the QCADesigner tool. The results have shown that the proposed QCA-based decoder has high performance in terms of a number of cells, covered area, and time delay. Due to the lower clock pulse frequency, the proposed 2-to-4 decoder is helpful for building QCA-based sequential digital circuits with high performance.

Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.

PubMed

Park, Sangsu; Noh, Jinwoo; Choo, Myung-Lae; Sheri, Ahmad Muqeem; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Hwang, Hyunsang

2013-09-27

Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption.In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal-oxide-semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers.

Socio-demographic predictors of person-organization fit.

PubMed

Merecz-Kot, Dorota; Andysz, Aleksandra

2017-02-21

The aim of this study was to explore the relationship between socio-demographic characteristics and the level of complementary and supplementary person-organization fit (P-O fit). The study sample was a group of 600 Polish workers, urban residents aged 19-65. Level of P-O fit was measured using the Subjective Person-Organization Fit Questionnaire by Czarnota-Bojarska. The binomial multivariate logistic regression was applied. The analyzes were performed separately for the men and women. Socio-demographic variables explained small percentage of the outcome variability. Gender differences were found. In the case of men shift work decreased complementary and supplementary fit, while long working hours decreased complementary fit. In the women, age was a stimulant of a complementary fit, involuntary job losses predicted both complementary and supplementary misfit. Additionally, relational responsibilities increased probability of supplementary P-O fit in the men. Going beyond personality and competences as the factors affecting P-O fit will allow development of a more accurate prediction of P-O fit. Int J Occup Med Environ Health 2017;30(1):133-139. This work is available in Open Access model and licensed under a CC BY-NC 3.0 PL license.

Automated tracking of animal posture and movement during exploration and sensory orientation behaviors.

PubMed

Gomez-Marin, Alex; Partoune, Nicolas; Stephens, Greg J; Louis, Matthieu; Brembs, Björn

2012-01-01

The nervous functions of an organism are primarily reflected in the behavior it is capable of. Measuring behavior quantitatively, at high-resolution and in an automated fashion provides valuable information about the underlying neural circuit computation. Accordingly, computer-vision applications for animal tracking are becoming a key complementary toolkit to genetic, molecular and electrophysiological characterization in systems neuroscience. We present Sensory Orientation Software (SOS) to measure behavior and infer sensory experience correlates. SOS is a simple and versatile system to track body posture and motion of single animals in two-dimensional environments. In the presence of a sensory landscape, tracking the trajectory of the animal's sensors and its postural evolution provides a quantitative framework to study sensorimotor integration. To illustrate the utility of SOS, we examine the orientation behavior of fruit fly larvae in response to odor, temperature and light gradients. We show that SOS is suitable to carry out high-resolution behavioral tracking for a wide range of organisms including flatworms, fishes and mice. Our work contributes to the growing repertoire of behavioral analysis tools for collecting rich and fine-grained data to draw and test hypothesis about the functioning of the nervous system. By providing open-access to our code and documenting the software design, we aim to encourage the adaptation of SOS by a wide community of non-specialists to their particular model organism and questions of interest.

Three-dimensional crossbar arrays of self-rectifying Si/SiO 2/Si memristors

DOE PAGES

Li, Can; Han, Lili; Jiang, Hao; ...

2017-06-05

Memristors are promising building blocks for the next generation memory, unconventional computing systems and beyond. Currently common materials used to build memristors are not necessarily compatible with the silicon dominant complementary metal-oxide-semiconductor (CMOS) technology. Furthermore, external selector devices or circuits are usually required in order for large memristor arrays to function properly, resulting in increased circuit complexity. Here we demonstrate fully CMOS-compatible, all-silicon based and self-rectifying memristors that negate the need for external selectors in large arrays. It consists of p- and n-type doped single crystalline silicon electrodes and a thin chemically produced silicon oxide switching layer. The device exhibitsmore » repeatable resistance switching behavior with high rectifying ratio (10 5), high ON/OFF conductance ratio (10 4) and attractive retention at 300 °C. We further build a 5-layer 3-dimensional (3D) crossbar array of 100 nm memristors by stacking fluid supported silicon membranes. The CMOS compatibility and self-rectifying behavior open up opportunities for mass production of memristor arrays and 3D hybrid circuits on full-wafer scale silicon and flexible substrates without increasing circuit complexity.« less

Electrically driven monolithic subwavelength plasmonic interconnect circuits

PubMed Central

Liu, Yang; Zhang, Jiasen; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

2017-01-01

In the post-Moore era, an electrically driven monolithic optoelectronic integrated circuit (OEIC) fabricated from a single material is pursued globally to enable the construction of wafer-scale compact computing systems with powerful processing capabilities and low-power consumption. We report a monolithic plasmonic interconnect circuit (PIC) consisting of a photovoltaic (PV) cascading detector, Au-strip waveguides, and electrically driven surface plasmon polariton (SPP) sources. These components are fabricated from carbon nanotubes (CNTs) via a CMOS (complementary metal-oxide semiconductor)–compatible doping-free technique in the same feature size, which can be reduced to deep-subwavelength scale (~λ/7 to λ/95, λ = 1340 nm) compared with the 14-nm technique node. An OEIC could potentially be configured as a repeater for data transport because of its “photovoltaic” operation mode to transform SPP energy directly into electricity to drive subsequent electronic circuits. Moreover, chip-scale throughput capability has also been demonstrated by fabricating a 20 × 20 PIC array on a 10 mm × 10 mm wafer. Tailoring photonics for monolithic integration with electronics beyond the diffraction limit opens a new era of chip-level nanoscale electronic-photonic systems, introducing a new path to innovate toward much faster, smaller, and cheaper computing frameworks. PMID:29062890

Nutritional and sensory evaluation of a complementary food formulated from rice, faba beans, sweet potato flour, and peanut oil.

PubMed

Mahmoud, Amal H; El Anany, Ayman Mohammed

2014-12-01

Childhood malnutrition is a common disorder in developing countries. To formulate a complementary food from rice, germinated-decoated faba bean, orange-fleshed sweet potato flour, and peanut oil (RFPP formula) for infants aged 6 to 24 months. The nutritional and sensory characteristics of the RFPP complementary food in comparison with those of a commercial complementary food were determined using standard official procedures. The levels of protein (17.89 g/100 g), fat (10.35 g/100 g), carbohydrate (67.82 g/100 g), and energy (435.99 kcal/100 g) of the RFPP complementary food met the specifications of the Codex standard (1991) and the Egyptian Standard No. 3284 (2005). The essential amino acid contents of the RFPP complementary food were higher than the amino acid profile of the Food and Agriculture Organization/World Health Organization/United Nations University (2002) reference protein for children 0.5 to 1 and 1 to 2 years of age. The RFPP complementary food had high levels (54.00%) of monounsaturated fatty acids. However, the highest level of saturated fatty acids (51.10%) was recorded for the commercial complementary food. The sensory evaluation results, using a nine-point hedonic scale ranging from 1 (dislike extremely) to 9 (like extremely), show that the RFPP complementary food was acceptable in appearance (7.20), color (6.35), aroma (6.75), taste (7.25), and mouthfeel (7.10) and had an overall acceptability of 6.40. The RFPP formulated complementary food was acceptable and adequate in nutrients for weaning purposes.

[Traditional and Complementary Medicine in Brazil: inclusion in the Brazilian Unified National Health System and integration with primary care].

PubMed

Sousa, Islandia Maria Carvalho de; Tesser, Charles Dalcanale

2017-01-23

This study aimed to analyze the inclusion of Traditional and Complementary Medicine in Brazilian Unified National Health System (SUS) and its integration with primary healthcare (PHC). A qualitative study drew on institutional data, indexed articles, and case studies in selected Brazilian cities: Campinas (São Paulo State), Florianópolis (Santa Catarina State), Recife (Pernambuco State), Rio de Janeiro, and São Paulo. The analysis adopted the perspective of inclusion of Traditional and Complementary Medicine in the healthcare network and its integration with primary healthcare, based on the following dimensions: presence of Traditional and Complementary Medicine on the municipal agenda; position in the services; mode of access to Traditional and Complementary Medicine; Traditional and Complementary Medicine practitioners; types of practices; demand profile; and potential for expansion in the SUS. The authors identified and characterized four types of inclusion and integration of Traditional and Complementary Medicine, whether in association or not: Type 1 - in primary healthcare via professionals from the family health teams - Integrated; Type 2 - in primary healthcare via professionals with full-time employment - Juxtaposed; Type 3 - in primary healthcare via matrix-organized teams - Matrix Organization; Type 4 - in specialized services - Without Integration. The combination of types 1 and 3 was considered a potential guideline for the expansion of Traditional and Complementary Medicine in the SUS and can orient the growth and integration of Traditional and Complementary Medicine with primary healthcare. The growing presence of Traditional and Complementary Medicine in the SUS requires conceiving its strategic expansion, while existing experiences should not be wasted.

A novel self-powered and sensitive label-free DNA biosensor in microbial fuel cell.

PubMed

Asghary, Maryam; Raoof, Jahan Bakhsh; Rahimnejad, Mostafa; Ojani, Reza

2016-08-15

In this work, a novel self-powered, sensitive, low-cost, and label-free DNA biosensor is reported by applying a two-chambered microbial fuel cell (MFC) as a power supply. A graphite electrode and an Au nanoparticles modified graphite electrode (AuNP/graphite electrode) were used as anode and cathode in the MFC system, respectively. The active biocatalyst in the anodic chamber was a mixed culture of microorganisms. The sensing element of the biosensor was fabricated by the well-known Au-thiol binding the ssDNA probe on the surface of an AuNP/graphite cathode. Electrons produced by microorganisms were transported from the anode to the cathode through an external circuit, which could be detected by the terminal multi-meter detector. The difference between power densities of the ssDNA probe modified cathode in the absence and presence of complementary sequence served as the detection signal of the DNA hybridization with detection limit of 3.1nM. Thereafter, this biosensor was employed for diagnosis and determination of complementary sequence in a human serum sample. The hybridization specificity studies further revealed that the developed DNA biosensor could distinguish fully complementary sequences from one-base mismatched and non-complementary sequences. Copyright © 2016 Elsevier B.V. All rights reserved.

Highly Efficient Ternary-Blend Polymer Solar Cells Enabled by a Nonfullerene Acceptor and Two Polymer Donors with a Broad Composition Tolerance.

PubMed

Xu, Xiaopeng; Bi, Zhaozhao; Ma, Wei; Wang, Zishuai; Choy, Wallace C H; Wu, Wenlin; Zhang, Guangjun; Li, Ying; Peng, Qiang

2017-12-01

In this work, highly efficient ternary-blend organic solar cells (TB-OSCs) are reported based on a low-bandgap copolymer of PTB7-Th, a medium-bandgap copolymer of PBDB-T, and a wide-bandgap small molecule of SFBRCN. The ternary-blend layer exhibits a good complementary absorption in the range of 300-800 nm, in which PTB7-Th and PBDB-T have excellent miscibility with each other and a desirable phase separation with SFBRCN. In such devices, there exist multiple energy transfer pathways from PBDB-T to PTB7-Th, and from SFBRCN to the above two polymer donors. The hole-back transfer from PTB7-Th to PBDB-T and multiple electron transfers between the acceptor and the donor materials are also observed for elevating the whole device performance. After systematically optimizing the weight ratio of PBDB-T:PTB7-Th:SFBRCN, a champion power conversion efficiency (PCE) of 12.27% is finally achieved with an open-circuit voltage (V oc ) of 0.93 V, a short-circuit current density (J sc ) of 17.86 mA cm -2 , and a fill factor of 73.9%, which is the highest value for the ternary OSCs reported so far. Importantly, the TB-OSCs exhibit a broad composition tolerance with a high PCE over 10% throughout the whole blend ratios. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Review of mixer design for low voltage - low power applications

NASA Astrophysics Data System (ADS)

Nurulain, D.; Musa, F. A. S.; Isa, M. Mohamad; Ahmad, N.; Kasjoo, S. R.

2017-09-01

A mixer is used in almost all radio frequency (RF) or microwave systems for frequency translation. Nowadays, the increase market demand encouraged the industry to deliver circuit designs to create proficient and convenient equipment with very low power (LP) consumption and low voltage (LV) supply in both digital and analogue circuits. This paper focused on different Complementary Metal Oxide Semiconductor (CMOS) design topologies for LV and LP mixer design. Floating Gate Metal Oxide Semiconductor (FGMOS) is an alternative technology to replace CMOS due to their high ability for LV and LP applications. FGMOS only required a few transistors per gate and can have a shift in threshold voltage (VTH) to increase the LP and LV performances as compared to CMOS, which makes an attractive option to replace CMOS.

Low-Power Photoplethysmogram Acquisition Integrated Circuit with Robust Light Interference Compensation.

PubMed

Kim, Jongpal; Kim, Jihoon; Ko, Hyoungho

2015-12-31

To overcome light interference, including a large DC offset and ambient light variation, a robust photoplethysmogram (PPG) readout chip is fabricated using a 0.13-μm complementary metal-oxide-semiconductor (CMOS) process. Against the large DC offset, a saturation detection and current feedback circuit is proposed to compensate for an offset current of up to 30 μA. For robustness against optical path variation, an automatic emitted light compensation method is adopted. To prevent ambient light interference, an alternating sampling and charge redistribution technique is also proposed. In the proposed technique, no additional power is consumed, and only three differential switches and one capacitor are required. The PPG readout channel consumes 26.4 μW and has an input referred current noise of 260 pArms.

Low-Power Photoplethysmogram Acquisition Integrated Circuit with Robust Light Interference Compensation

PubMed Central

Kim, Jongpal; Kim, Jihoon; Ko, Hyoungho

2015-01-01

To overcome light interference, including a large DC offset and ambient light variation, a robust photoplethysmogram (PPG) readout chip is fabricated using a 0.13-μm complementary metal–oxide–semiconductor (CMOS) process. Against the large DC offset, a saturation detection and current feedback circuit is proposed to compensate for an offset current of up to 30 μA. For robustness against optical path variation, an automatic emitted light compensation method is adopted. To prevent ambient light interference, an alternating sampling and charge redistribution technique is also proposed. In the proposed technique, no additional power is consumed, and only three differential switches and one capacitor are required. The PPG readout channel consumes 26.4 μW and has an input referred current noise of 260 pArms. PMID:26729122

An ENG resonator-based microwave sensor for the characterization of aqueous glucose

NASA Astrophysics Data System (ADS)

Kumari, Ratnesh; Patel, Piyush N.; Yadav, Rahul

2018-02-01

This work proposes a microwave filter with a notched frequency of transmission using an epsilon negative (ENG) unit-cell resonator as a sensor device. The device finds important application for the characterization of life-saving samples such as glucose. The ENG structure consists of two complementary geometries in the shape of ring and horn. The structure efficiently inhibits the incoming RF signal and creates a stopband resonance at 2.074 GHz. The printed circuit board of the layout was realized using FR-4 substrate of relative permittivity ɛ r  =  4.4, and height of 1.6 mm. It is experimentally seen that in the complementary area of horn and circular ring, the glucose sample perturbs the air-dielectric fringing fields which exist over the complementary area and modifies the frequency of stopband resonance. A change in sensor resonance was recorded and calibrated for different concentrations of glucose sample. The sensor exhibits a linear response for glucose concentration ranging from 20 to 100 mg ml-1 in the sensing area.

Short-Circuit Fault Detection and Classification Using Empirical Wavelet Transform and Local Energy for Electric Transmission Line.

PubMed

Huang, Nantian; Qi, Jiajin; Li, Fuqing; Yang, Dongfeng; Cai, Guowei; Huang, Guilin; Zheng, Jian; Li, Zhenxin

2017-09-16

In order to improve the classification accuracy of recognizing short-circuit faults in electric transmission lines, a novel detection and diagnosis method based on empirical wavelet transform (EWT) and local energy (LE) is proposed. First, EWT is used to deal with the original short-circuit fault signals from photoelectric voltage transformers, before the amplitude modulated-frequency modulated (AM-FM) mode with a compactly supported Fourier spectrum is extracted. Subsequently, the fault occurrence time is detected according to the modulus maxima of intrinsic mode function (IMF₂) from three-phase voltage signals processed by EWT. After this process, the feature vectors are constructed by calculating the LE of the fundamental frequency based on the three-phase voltage signals of one period after the fault occurred. Finally, the classifier based on support vector machine (SVM) which was constructed with the LE feature vectors is used to classify 10 types of short-circuit fault signals. Compared with complementary ensemble empirical mode decomposition with adaptive noise (CEEMDAN) and improved CEEMDAN methods, the new method using EWT has a better ability to present the frequency in time. The difference in the characteristics of the energy distribution in the time domain between different types of short-circuit faults can be presented by the feature vectors of LE. Together, simulation and real signals experiment demonstrate the validity and effectiveness of the new approach.

Short-Circuit Fault Detection and Classification Using Empirical Wavelet Transform and Local Energy for Electric Transmission Line

PubMed Central

Huang, Nantian; Qi, Jiajin; Li, Fuqing; Yang, Dongfeng; Cai, Guowei; Huang, Guilin; Zheng, Jian; Li, Zhenxin

2017-01-01

In order to improve the classification accuracy of recognizing short-circuit faults in electric transmission lines, a novel detection and diagnosis method based on empirical wavelet transform (EWT) and local energy (LE) is proposed. First, EWT is used to deal with the original short-circuit fault signals from photoelectric voltage transformers, before the amplitude modulated-frequency modulated (AM-FM) mode with a compactly supported Fourier spectrum is extracted. Subsequently, the fault occurrence time is detected according to the modulus maxima of intrinsic mode function (IMF2) from three-phase voltage signals processed by EWT. After this process, the feature vectors are constructed by calculating the LE of the fundamental frequency based on the three-phase voltage signals of one period after the fault occurred. Finally, the classifier based on support vector machine (SVM) which was constructed with the LE feature vectors is used to classify 10 types of short-circuit fault signals. Compared with complementary ensemble empirical mode decomposition with adaptive noise (CEEMDAN) and improved CEEMDAN methods, the new method using EWT has a better ability to present the frequency in time. The difference in the characteristics of the energy distribution in the time domain between different types of short-circuit faults can be presented by the feature vectors of LE. Together, simulation and real signals experiment demonstrate the validity and effectiveness of the new approach. PMID:28926953

Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer.

PubMed

Lee, Young Tack; Kwon, Hyeokjae; Kim, Jin Sung; Kim, Hong-Hee; Lee, Yun Jae; Lim, Jung Ah; Song, Yong-Won; Yi, Yeonjin; Choi, Won-Kook; Hwang, Do Kyung; Im, Seongil

2015-10-27

Two-dimensional van der Waals (2D vdWs) materials are a class of new materials that can provide important resources for future electronics and materials sciences due to their unique physical properties. Among 2D vdWs materials, black phosphorus (BP) has exhibited significant potential for use in electronic and optoelectronic applications because of its allotropic properties, high mobility, and direct and narrow band gap. Here, we demonstrate a few-layered BP-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. Experiments showed that our BP-based ferroelectric transistors operate satisfactorily at room temperature in ambient air and exhibit a clear memory window. Unlike conventional ambipolar BP transistors, our ferroelectric transistors showed only p-type characteristics due to the carbon-fluorine (C-F) dipole effect of the P(VDF-TrFE) layer, as well as the highest linear mobility value of 1159 cm(2) V(-1) s(-1) with a 10(3) on/off current ratio. For more advanced memory applications beyond unit memory devices, we implemented two memory inverter circuits, a resistive-load inverter circuit and a complementary inverter circuit, combined with an n-type molybdenum disulfide (MoS2) nanosheet. Our memory inverter circuits displayed a clear memory window of 15 V and memory output voltage efficiency of 95%.

Ratiometric, filter-free optical sensor based on a complementary metal oxide semiconductor buried double junction photodiode.

PubMed

Yung, Ka Yi; Zhan, Zhiyong; Titus, Albert H; Baker, Gary A; Bright, Frank V

2015-07-16

We report a complementary metal oxide semiconductor integrated circuit (CMOS IC) with a buried double junction (BDJ) photodiode that (i) provides a real-time output signal that is related to the intensity ratio at two emission wavelengths and (ii) simultaneously eliminates the need for an optical filter to block Rayleigh scatter. We demonstrate the BDJ platform performance for gaseous NH3 and aqueous pH detection. We also compare the BDJ performance to parallel results obtained by using a slew scanned fluorimeter (SSF). The BDJ results are functionally equivalent to the SSF results without the need for any wavelength filtering or monochromators and the BDJ platform is not prone to errors associated with source intensity fluctuations or sensor signal drift. Copyright © 2015 Elsevier B.V. All rights reserved.

Three-Function Logic Gate Controlled by Analog Voltage

NASA Technical Reports Server (NTRS)

Zebulum, Ricardo; Stoica, Adrian

2006-01-01

The figure is a schematic diagram of a complementary metal oxide/semiconductor (CMOS) electronic circuit that performs one of three different logic functions, depending on the level of an externally applied control voltage, V(sub sel). Specifically, the circuit acts as A NAND gate at V(sub sel) = 0.0 V, A wire (the output equals one of the inputs) at V(sub sel) = 1.0 V, or An AND gate at V(sub sel) = -1.8 V. [The nominal power-supply potential (VDD) and logic "1" potential of this circuit is 1.8 V.] Like other multifunctional circuits described in several prior NASA Tech Briefs articles, this circuit was synthesized following an automated evolutionary approach that is so named because it is modeled partly after the repetitive trial-and-error process of biological evolution. An evolved circuit can be tested by computational simulation and/or tested in real hardware, and the results of the test can provide guidance for refining the design through further iteration. The evolutionary synthesis of electronic circuits can now be implemented by means of a software package Genetic Algorithms for Circuit Synthesis (GACS) that was developed specifically for this purpose. GACS was used to synthesize the present trifunctional circuit. As in the cases of other multifunctional circuits described in several prior NASA Tech Briefs articles, the multiple functionality of this circuit, the use of a single control voltage to select the function, and the automated evolutionary approach to synthesis all contribute synergistically to a combination of features that are potentially advantageous for the further development of robust, multiple-function logic circuits, including, especially, field-programmable gate arrays (FPGAs). These advantages include the following: This circuit contains only 9 transistors about half the number of transistors that would be needed to obtain equivalent NAND/wire/AND functionality by use of components from a standard digital design library. If multifunctional gates like this circuit were used in the place of the configurable logic blocks of present commercial FPGAs, it would be possible to change the functions of the resulting digital systems within shorter times. For example, by changing a single control voltage, one could change the function of thousands of FPGA cells within nanoseconds. In contrast, typically, the reconfiguration in a conventional FPGA by use of bits downloaded from look-up tables via a digital bus takes microseconds.

Gallium Nitride Monolithic Microwave Integrated Circuit Designs Using 0.25-micro m Qorvo Process

DTIC Science & Technology

2017-07-27

and sensor systems of interest to US Defense Department applications, particularly for next-generation radar systems. Broadband, efficient, high...A simple GaN high-electron-mobility-transistor (HEMT) TR single-pull double- throw (SPDT) switch consists of at least 2 series- and 2 shunt... simple TR switch that works well up to 6 GHz is shown in Figs. 4 (layout) and 5 (simulation). Complementary DC-bias voltages are applied at inputs A

Physical fault tolerance of nanoelectronics.

PubMed

Szkopek, Thomas; Roychowdhury, Vwani P; Antoniadis, Dimitri A; Damoulakis, John N

2011-04-29

The error rate in complementary transistor circuits is suppressed exponentially in electron number, arising from an intrinsic physical implementation of fault-tolerant error correction. Contrariwise, explicit assembly of gates into the most efficient known fault-tolerant architecture is characterized by a subexponential suppression of error rate with electron number, and incurs significant overhead in wiring and complexity. We conclude that it is more efficient to prevent logical errors with physical fault tolerance than to correct logical errors with fault-tolerant architecture.

A bipolar analog front-end integrated circuit for the SDC silicon tracker

NASA Astrophysics Data System (ADS)

Kipnis, I.; Spieler, H.; Collins, T.

1993-11-01

A low noise, low power, high bandwidth, radiation hard, silicon bipolar transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDC silicon tracker. The IC was designed and tested at LBL and was fabricated using CBIC-U2, 4 GHz f(sub T) complementary bipolar technology. Each channel contains the following functions: low noise preamplification, pulse shaping, and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 micron pitch double-sided silicon strip detector. The chip measures 6.8 mm by 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to four times the noise level, a 16 nsec time-walk for 1.25 to 10 fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a Phi = 10(exp 14) protons/sq cm have been performed on the IC, demonstrating the radiation hardness of the complementary bipolar process.

Symmetry-breaking charge transfer in a zinc chlorodipyrrin acceptor for high open circuit voltage organic photovoltaics.

PubMed

Bartynski, Andrew N; Gruber, Mark; Das, Saptaparna; Rangan, Sylvie; Mollinger, Sonya; Trinh, Cong; Bradforth, Stephen E; Vandewal, Koen; Salleo, Alberto; Bartynski, Robert A; Bruetting, Wolfgang; Thompson, Mark E

2015-04-29

Low open-circuit voltages significantly limit the power conversion efficiency of organic photovoltaic devices. Typical strategies to enhance the open-circuit voltage involve tuning the HOMO and LUMO positions of the donor (D) and acceptor (A), respectively, to increase the interfacial energy gap or to tailor the donor or acceptor structure at the D/A interface. Here, we present an alternative approach to improve the open-circuit voltage through the use of a zinc chlorodipyrrin, ZCl [bis(dodecachloro-5-mesityldipyrrinato)zinc], as an acceptor, which undergoes symmetry-breaking charge transfer (CT) at the donor/acceptor interface. DBP/ZCl cells exhibit open-circuit voltages of 1.33 V compared to 0.88 V for analogous tetraphenyldibenzoperyflanthrene (DBP)/C60-based devices. Charge transfer state energies measured by Fourier-transform photocurrent spectroscopy and electroluminescence show that C60 forms a CT state of 1.45 ± 0.05 eV in a DBP/C60-based organic photovoltaic device, while ZCl as acceptor gives a CT state energy of 1.70 ± 0.05 eV in the corresponding device structure. In the ZCl device this results in an energetic loss between E(CT) and qV(OC) of 0.37 eV, substantially less than the 0.6 eV typically observed for organic systems and equal to the recombination losses seen in high-efficiency Si and GaAs devices. The substantial increase in open-circuit voltage and reduction in recombination losses for devices utilizing ZCl demonstrate the great promise of symmetry-breaking charge transfer in organic photovoltaic devices.

A complementary organic inverter of porphyrazine thin films: low-voltage operation using ionic liquid gate dielectrics.

PubMed

Fujimoto, Takuya; Miyoshi, Yasuhito; Matsushita, Michio M; Awaga, Kunio

2011-05-28

We studied a complementary organic inverter consisting of a p-type semiconductor, metal-free phthalocyanine (H(2)Pc), and an n-type semiconductor, tetrakis(thiadiazole)porphyrazine (H(2)TTDPz), operated through the ionic-liquid gate dielectrics of N,N-diethyl-N-methyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide (DEME-TFSI). This organic inverter exhibits high performance with a very low operation voltage below 1.0 V and a dynamic response up to 20 Hz. © The Royal Society of Chemistry 2011

Organic field effect transistor with ultra high amplification

NASA Astrophysics Data System (ADS)

Torricelli, Fabrizio

2016-09-01

High-gain transistors are essential for the large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show organic transistors fabricated on plastic foils enabling unipolar amplifiers with ultra-gain. The proposed approach is general and opens up new opportunities for ultra-large signal amplification in organic circuits and sensors.

Adaptive neuro fuzzy inference system-based power estimation method for CMOS VLSI circuits

NASA Astrophysics Data System (ADS)

Vellingiri, Govindaraj; Jayabalan, Ramesh

2018-03-01

Recent advancements in very large scale integration (VLSI) technologies have made it feasible to integrate millions of transistors on a single chip. This greatly increases the circuit complexity and hence there is a growing need for less-tedious and low-cost power estimation techniques. The proposed work employs Back-Propagation Neural Network (BPNN) and Adaptive Neuro Fuzzy Inference System (ANFIS), which are capable of estimating the power precisely for the complementary metal oxide semiconductor (CMOS) VLSI circuits, without requiring any knowledge on circuit structure and interconnections. The ANFIS to power estimation application is relatively new. Power estimation using ANFIS is carried out by creating initial FIS modes using hybrid optimisation and back-propagation (BP) techniques employing constant and linear methods. It is inferred that ANFIS with the hybrid optimisation technique employing the linear method produces better results in terms of testing error that varies from 0% to 0.86% when compared to BPNN as it takes the initial fuzzy model and tunes it by means of a hybrid technique combining gradient descent BP and mean least-squares optimisation algorithms. ANFIS is the best suited for power estimation application with a low RMSE of 0.0002075 and a high coefficient of determination (R) of 0.99961.

Digital time delay

DOEpatents

Martin, A.D.

1986-05-09

Method and apparatus are provided for generating an output pulse following a trigger pulse at a time delay interval preset with a resolution which is high relative to a low resolution available from supplied clock pulses. A first lumped constant delay provides a first output signal at predetermined interpolation intervals corresponding to the desired high resolution time interval. Latching circuits latch the high resolution data to form a first synchronizing data set. A selected time interval has been preset to internal counters and corrected for circuit propagation delay times having the same order of magnitude as the desired high resolution. Internal system clock pulses count down the counters to generate an internal pulse delayed by an internal which is functionally related to the preset time interval. A second LCD corrects the internal signal with the high resolution time delay. A second internal pulse is then applied to a third LCD to generate a second set of synchronizing data which is complementary with the first set of synchronizing data for presentation to logic circuits. The logic circuits further delay the internal output signal with the internal pulses. The final delayed output signal thereafter enables the output pulse generator to produce the desired output pulse at the preset time delay interval following input of the trigger pulse.

A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition.

PubMed

Dong, Kaichen; Choe, Hwan Sung; Wang, Xi; Liu, Huili; Saha, Bivas; Ko, Changhyun; Deng, Yang; Tom, Kyle B; Lou, Shuai; Wang, Letian; Grigoropoulos, Costas P; You, Zheng; Yao, Jie; Wu, Junqiao

2018-04-01

Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously. Here 0.2 V MEM switching devices with ≳10 6 safe operating cycles in ambient air are reported, which achieve the lowest operating voltage in mechanical switches without body bias reported to date. The ultralow operating voltage is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide (VO 2 ) slightly above room temperature. The phase-transition MEM switches open possibilities for sub 1 V hybrid integrated devices/circuits/systems, as well as ultralow power consumption sensors for Internet of Things applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cobalt Oxide Nanosheet and CNT Micro Carbon Monoxide Sensor Integrated with Readout Circuit on Chip

PubMed Central

Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

2010-01-01

The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively. PMID:22294897

Cobalt oxide nanosheet and CNT micro carbon monoxide sensor integrated with readout circuit on chip.

PubMed

Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

2010-01-01

The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively.

A memristor-based nonvolatile latch circuit

NASA Astrophysics Data System (ADS)

Robinett, Warren; Pickett, Matthew; Borghetti, Julien; Xia, Qiangfei; Snider, Gregory S.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley

2010-06-01

Memristive devices, which exhibit a dynamical conductance state that depends on the excitation history, can be used as nonvolatile memory elements by storing information as different conductance states. We describe the implementation of a nonvolatile synchronous flip-flop circuit that uses a nanoscale memristive device as the nonvolatile memory element. Controlled testing of the circuit demonstrated successful state storage and restoration, with an error rate of 0.1%, during 1000 power loss events. These results indicate that integration of digital logic devices and memristors could open the way for nonvolatile computation with applications in small platforms that rely on intermittent power sources. This demonstrated feasibility of tight integration of memristors with CMOS (complementary metal-oxide-semiconductor) circuitry challenges the traditional memory hierarchy, in which nonvolatile memory is only available as a large, slow, monolithic block at the bottom of the hierarchy. In contrast, the nonvolatile, memristor-based memory cell can be fast, fine-grained and small, and is compatible with conventional CMOS electronics. This threatens to upset the traditional memory hierarchy, and may open up new architectural possibilities beyond it.

Nanogap Electrodes towards Solid State Single-Molecule Transistors.

PubMed

Cui, Ajuan; Dong, Huanli; Hu, Wenping

2015-12-01

With the establishment of complementary metal-oxide-semiconductor (CMOS)-based integrated circuit technology, it has become more difficult to follow Moore's law to further downscale the size of electronic components. Devices based on various nanostructures were constructed to continue the trend in the minimization of electronics, and molecular devices are among the most promising candidates. Compared with other candidates, molecular devices show unique superiorities, and intensive studies on molecular devices have been carried out both experimentally and theoretically at the present time. Compared to two-terminal molecular devices, three-terminal devices, namely single-molecule transistors, show unique advantages both in fundamental research and application and are considered to be an essential part of integrated circuits based on molecular devices. However, it is very difficult to construct them using the traditional microfabrication techniques directly, thus new fabrication strategies are developed. This review aims to provide an exclusive way of manufacturing solid state gated nanogap electrodes, the foundation of constructing transistors of single or a few molecules. Such single-molecule transistors have the potential to be used to build integrated circuits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Commercialisation of CMOS Integrated Circuit Technology in Multi-Electrode Arrays for Neuroscience and Cell-Based Biosensors

PubMed Central

Graham, Anthony H. D.; Robbins, Jon; Bowen, Chris R.; Taylor, John

2011-01-01

The adaptation of standard integrated circuit (IC) technology as a transducer in cell-based biosensors in drug discovery pharmacology, neural interface systems and electrophysiology requires electrodes that are electrochemically stable, biocompatible and affordable. Unfortunately, the ubiquitous Complementary Metal Oxide Semiconductor (CMOS) IC technology does not meet the first of these requirements. For devices intended only for research, modification of CMOS by post-processing using cleanroom facilities has been achieved. However, to enable adoption of CMOS as a basis for commercial biosensors, the economies of scale of CMOS fabrication must be maintained by using only low-cost post-processing techniques. This review highlights the methodologies employed in cell-based biosensor design where CMOS-based integrated circuits (ICs) form an integral part of the transducer system. Particular emphasis will be placed on the application of multi-electrode arrays for in vitro neuroscience applications. Identifying suitable IC packaging methods presents further significant challenges when considering specific applications. The various challenges and difficulties are reviewed and some potential solutions are presented. PMID:22163884

Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.

PubMed

Baeg, Kang-Jun; Caironi, Mario; Noh, Yong-Young

2013-08-21

For at least the past ten years printed electronics has promised to revolutionize our daily life by making cost-effective electronic circuits and sensors available through mass production techniques, for their ubiquitous applications in wearable components, rollable and conformable devices, and point-of-care applications. While passive components, such as conductors, resistors and capacitors, had already been fabricated by printing techniques at industrial scale, printing processes have been struggling to meet the requirements for mass-produced electronics and optoelectronics applications despite their great potential. In the case of logic integrated circuits (ICs), which constitute the focus of this Progress Report, the main limitations have been represented by the need of suitable functional inks, mainly high-mobility printable semiconductors and low sintering temperature conducting inks, and evoluted printing tools capable of higher resolution, registration and uniformity than needed in the conventional graphic arts printing sector. Solution-processable polymeric semiconductors are the best candidates to fulfill the requirements for printed logic ICs on flexible substrates, due to their superior processability, ease of tuning of their rheology parameters, and mechanical properties. One of the strongest limitations has been mainly represented by the low charge carrier mobility (μ) achievable with polymeric, organic field-effect transistors (OFETs). However, recently unprecedented values of μ ∼ 10 cm(2) /Vs have been achieved with solution-processed polymer based OFETs, a value competing with mobilities reported in organic single-crystals and exceeding the performances enabled by amorphous silicon (a-Si). Interestingly these values were achieved thanks to the design and synthesis of donor-acceptor copolymers, showing limited degree of order when processed in thin films and therefore fostering further studies on the reason leading to such improved charge transport properties. Among this class of materials, various polymers can show well balanced electrons and holes mobility, therefore being indicated as ambipolar semiconductors, good environmental stability, and a small band-gap, which simplifies the tuning of charge injection. This opened up the possibility of taking advantage of the superior performances offered by complementary "CMOS-like" logic for the design of digital ICs, easing the scaling down of critical geometrical features, and achieving higher complexity from robust single gates (e.g., inverters) and test circuits (e.g., ring oscillators) to more complete circuits. Here, we review the recent progress in the development of printed ICs based on polymeric semiconductors suitable for large-volume micro- and nano-electronics applications. Particular attention is paid to the strategies proposed in the literature to design and synthesize high mobility polymers and to develop suitable printing tools and techniques to allow for improved patterning capability required for the down-scaling of devices in order to achieve the operation frequencies needed for applications, such as flexible radio-frequency identification (RFID) tags, near-field communication (NFC) devices, ambient electronics, and portable flexible displays. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dual embedded agency: physicians implement integrative medicine in health-care organizations.

PubMed

Keshet, Yael

2013-11-01

The paradox of embedded agency addresses the question of how embedded agents are able to conceive of new ideas and practices and then implement them in institutionalized organizations if social structures exert so powerful an influence on behavior, and agents operate within a framework of institutional constraints. This article proposes that dual embedded agency may provide an explanation of the paradox. The article draws from an ethnographic study that examined the ways in which dual-trained physicians, namely medical doctors trained also in some modality of complementary and alternative medicine, integrate complementary and alternative medicine into the biomedical fortress of mainstream health-care organizations. Participant observations were conducted during the years 2006-2011. The observed physicians were found to be embedded in two diverse medical cultures and to have a hybrid professional identity that comprised two sets of health-care values. Seeking to introduce new ideas and practices associated with complementary and alternative medicine to medical institutions, they maneuvered among the constraints of institutional structures while using these very structures, in an isomorphic mode of action, as a platform for launching complementary and alternative medicine practices and values. They drew on the complementary and alternative medicine philosophical principle of interconnectedness and interdependency of seemingly polar opposites or contrary forces and acted to achieve change by means of nonadversarial strategies. By addressing the structure-agency dichotomy, this study contributes to the literature on change in institutionalized health-care organizations. It likewise contributes both theoretically and empirically to the study of integrative medicine and to the further development of this relatively new area of inquiry within the sociology of medicine.

Proposal of indicators to evaluate complementary feeding based on World Health Organization indicators.

PubMed

Saldan, Paula Chuproski; Venancio, Sonia Isoyama; Saldiva, Silvia Regina Dias Medici; de Mello, Débora Falleiros

2016-09-01

This study compares complementary feeding World Health Organization (WHO) indicators with those built in accordance with Brazilian recommendations (Ten Steps to Healthy Feeding). A cross-sectional study was carried out during the National Immunization Campaign against Poliomyelitis in Guarapuava-Paraná, Brazil, in 2012. Feeding data from 1,355 children aged 6-23 months were obtained through the 24 h diet recall. Based on five indicators, the proportion of adequacy was evaluated: introduction of solid, semi-solid, or soft foods; minimum dietary diversity; meal frequency; acceptable diet; and consumption of iron-rich foods. Complementary feeding showed adequacy higher than 85% in most WHO indicators, while review by the Ten Steps assessment method showed a less favorable circumstance and a high intake of unhealthy foods. WHO indicators may not reflect the complementary feeding conditions of children in countries with low malnutrition rates and an increased prevalence of overweight/obesity. The use of indicators according to the Ten Steps can be useful to identify problems and redirect actions aimed at promoting complementary feeding. © 2016 John Wiley & Sons Australia, Ltd.

Noise and correlations in a microwave-mechanical-optical transducer

NASA Astrophysics Data System (ADS)

Higginbotham, Andrew P.; Burns, Peter S.; Peterson, Robert W.; Urmey, Maxwell D.; Kampel, Nir S.; Menke, Timothy; Cicak, Katarina; Simmonds, Raymond W.; Regal, Cindy A.; Lehnert, Konrad W.

Viewed as resources for quantum information processing, microwave and optical fields offer complementary strengths. We simultaneously couple one mode of a micromechanical oscillator to a resonant microwave circuit and a high-finesse optical cavity. In previous work, this system was operated as a classical converter between microwave and optical signals at 4 K, operating with 10% efficiency and 1500 photons of added noise. To improve noise performance, we now operate the converter at 0.1 K. We have observed order-of-magnitude improvement in noise performance, and quantified effects from undesired interactions between the laser and superconducting circuit. Correlations between the microwave and optical fields have also been investigated, serving as a precursor to upcoming quantum operation. We acknowledge support from AFOSR MURI Grant FA9550-15-1-0015 and PFC National Science Foundation Grant 1125844.

Subwavelength InSb-based Slot wavguides for THz transport: concept and practical implementations.

PubMed

Ma, Youqiao; Zhou, Jun; Pištora, Jaromír; Eldlio, Mohamed; Nguyen-Huu, Nghia; Maeda, Hiroshi; Wu, Qiang; Cada, Michael

2016-12-07

Seeking better surface plasmon polariton (SPP) waveguides is of critical importance to construct the frequency-agile terahertz (THz) front-end circuits. We propose and investigate here a new class of semiconductor-based slot plasmonic waveguides for subwavelength THz transport. Optimizations of the key geometrical parameters demonstrate its better guiding properties for simultaneous realization of long propagation lengths (up to several millimeters) and ultra-tight mode confinement (~λ 2 /530) in the THz spectral range. The feasibility of the waveguide for compact THz components is also studied to lay the foundations for its practical implementations. Importantly, the waveguide is compatible with the current complementary metal-oxide-semiconductor (CMOS) fabrication technique. We believe the proposed waveguide configuration could offer a potential for developing a CMOS plasmonic platform and can be designed into various components for future integrated THz circuits (ITCs).

Power management circuits for self-powered systems based on micro-scale solar energy harvesting

NASA Astrophysics Data System (ADS)

Yoon, Eun-Jung; Yu, Chong-Gun

2016-03-01

In this paper, two types of power management circuits for self-powered systems based on micro-scale solar energy harvesting are proposed. First, if a solar cell outputs a very low voltage, less than 0.5 V, as in miniature solar cells or monolithic integrated solar cells, such that it cannot directly power the load, a voltage booster is employed to step up the solar cell's output voltage, and then a power management unit (PMU) delivers the boosted voltage to the load. Second, if the output voltage of a solar cell is enough to drive the load, the PMU directly supplies the load with solar energy. The proposed power management systems are designed and fabricated in a 0.18-μm complementary metal-oxide-semiconductor process, and their performances are compared and analysed through measurements.

Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits

NASA Astrophysics Data System (ADS)

Strangio, S.; Palestri, P.; Lanuzza, M.; Esseni, D.; Crupi, F.; Selmi, L.

2017-02-01

In this work, a benchmark for low-power digital applications of a III-V TFET technology platform against a conventional CMOS FinFET technology node is proposed. The analysis focuses on full-adder circuits, which are commonly identified as representative of the digital logic environment. 28T and 24T topologies, implemented in complementary-logic and transmission-gate logic, respectively, are investigated. Transient simulations are performed with a purpose-built test-bench on each single-bit full adder solution. The extracted delays and energy characteristics are post-processed and translated into figures-of-merit for multi-bit ripple-carry-adders. Trends related to the different full-adder implementations (for the same device technology platform) and to the different technology platforms (for the same full-adder topology) are presented and discussed.

Derivation of the open-circuit voltage of organic solar cells

NASA Astrophysics Data System (ADS)

Staple, Douglas B.; Oliver, Patricia A. K.; Hill, Ian G.

2014-05-01

Organic photovoltaic cells have improved in efficiency from 1% two decades ago to over 10% today. Continued improvement necessitates a theoretical understanding of the factors determining efficiency. Organic photovoltaic efficiency can be parameterized in terms of open-circuit voltage, short-circuit current, and fill factor. Here we present a theory that explains the dependencies of open-circuit voltage on semiconductor energy levels, light intensity, solar cell and light-source temperatures, charge-carrier recombination, and external fluorescence efficiency. The present theory also explains why recombination at the donor-acceptor heterointerface is a dominant process in heterojunction-based cells. Furthermore, the Carnot efficiency appears, highlighting the connection to basic thermodynamics. The theory presented here is consistent with and builds on the experimental and theoretical observations already in the literature. Crucially, the present theory can be straightforwardly derived in a line-by-line fashion using standard tools from statistical physics.

Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Ching-Lin Fan,; Hui-Lung Lai,; Jyu-Yu Chang,

2010-05-01

In this paper, we propose a novel pixel design and driving method for active-matrix organic light-emitting diode (AM-OLED) displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). The proposed threshold voltage compensation circuit, which comprised five transistors and two capacitors, has been verified to supply uniform output current by simulation work using the automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE) simulator. The driving scheme of this voltage programming method includes four periods: precharging, compensation, data input, and emission. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<1%) and high output current. The proposed pixel circuit shows high immunity to the threshold voltage deviation characteristics of both the driving poly-Si TFT and the OLED.

Measurement of Bacterial Bioluminescence Intensity and Spectrum: Current Physical Techniques and Principles.

PubMed

Jia, Kun; Ionescu, Rodica Elena

2016-01-01

: Bioluminescence is light production by living organisms, which can be observed in numerous marine creatures and some terrestrial invertebrates. More specifically, bacterial bioluminescence is the "cold light" produced and emitted by bacterial cells, including both wild-type luminescent and genetically engineered bacteria. Because of the lively interplay of synthetic biology, microbiology, toxicology, and biophysics, different configurations of whole-cell biosensors based on bacterial bioluminescence have been designed and are widely used in different fields, such as ecotoxicology, food toxicity, and environmental pollution. This chapter first discusses the background of the bioluminescence phenomenon in terms of optical spectrum. Platforms for bacterial bioluminescence detection using various techniques are then introduced, such as a photomultiplier tube, charge-coupled device (CCD) camera, micro-electro-mechanical systems (MEMS), and complementary metal-oxide-semiconductor (CMOS) based integrated circuit. Furthermore, some typical biochemical methods to optimize the analytical performances of bacterial bioluminescent biosensors/assays are reviewed, followed by a presentation of author's recent work concerning the improved sensitivity of a bioluminescent assay for pesticides. Finally, bacterial bioluminescence as implemented in eukaryotic cells, bioluminescent imaging, and cancer cell therapies is discussed.

Automated Tracking of Animal Posture and Movement during Exploration and Sensory Orientation Behaviors

PubMed Central

Gomez-Marin, Alex; Partoune, Nicolas; Stephens, Greg J.; Louis, Matthieu

2012-01-01

Background The nervous functions of an organism are primarily reflected in the behavior it is capable of. Measuring behavior quantitatively, at high-resolution and in an automated fashion provides valuable information about the underlying neural circuit computation. Accordingly, computer-vision applications for animal tracking are becoming a key complementary toolkit to genetic, molecular and electrophysiological characterization in systems neuroscience. Methodology/Principal Findings We present Sensory Orientation Software (SOS) to measure behavior and infer sensory experience correlates. SOS is a simple and versatile system to track body posture and motion of single animals in two-dimensional environments. In the presence of a sensory landscape, tracking the trajectory of the animal's sensors and its postural evolution provides a quantitative framework to study sensorimotor integration. To illustrate the utility of SOS, we examine the orientation behavior of fruit fly larvae in response to odor, temperature and light gradients. We show that SOS is suitable to carry out high-resolution behavioral tracking for a wide range of organisms including flatworms, fishes and mice. Conclusions/Significance Our work contributes to the growing repertoire of behavioral analysis tools for collecting rich and fine-grained data to draw and test hypothesis about the functioning of the nervous system. By providing open-access to our code and documenting the software design, we aim to encourage the adaptation of SOS by a wide community of non-specialists to their particular model organism and questions of interest. PMID:22912674

Strong Coupling of Microwave Photons to Antiferromagnetic Fluctuations in an Organic Magnet.

PubMed

Mergenthaler, Matthias; Liu, Junjie; Le Roy, Jennifer J; Ares, Natalia; Thompson, Amber L; Bogani, Lapo; Luis, Fernando; Blundell, Stephen J; Lancaster, Tom; Ardavan, Arzhang; Briggs, G Andrew D; Leek, Peter J; Laird, Edward A

2017-10-06

Coupling between a crystal of di(phenyl)-(2,4,6-trinitrophenyl)iminoazanium radicals and a superconducting microwave resonator is investigated in a circuit quantum electrodynamics (circuit QED) architecture. The crystal exhibits paramagnetic behavior above 4 K, with antiferromagnetic correlations appearing below this temperature, and we demonstrate strong coupling at base temperature. The magnetic resonance acquires a field angle dependence as the crystal is cooled down, indicating anisotropy of the exchange interactions. These results show that multispin modes in organic crystals are suitable for circuit QED, offering a platform for their coherent manipulation. They also utilize the circuit QED architecture as a way to probe spin correlations at low temperature.

Strong Coupling of Microwave Photons to Antiferromagnetic Fluctuations in an Organic Magnet

NASA Astrophysics Data System (ADS)

Mergenthaler, Matthias; Liu, Junjie; Le Roy, Jennifer J.; Ares, Natalia; Thompson, Amber L.; Bogani, Lapo; Luis, Fernando; Blundell, Stephen J.; Lancaster, Tom; Ardavan, Arzhang; Briggs, G. Andrew D.; Leek, Peter J.; Laird, Edward A.

2017-10-01

Coupling between a crystal of di(phenyl)-(2,4,6-trinitrophenyl)iminoazanium radicals and a superconducting microwave resonator is investigated in a circuit quantum electrodynamics (circuit QED) architecture. The crystal exhibits paramagnetic behavior above 4 K, with antiferromagnetic correlations appearing below this temperature, and we demonstrate strong coupling at base temperature. The magnetic resonance acquires a field angle dependence as the crystal is cooled down, indicating anisotropy of the exchange interactions. These results show that multispin modes in organic crystals are suitable for circuit QED, offering a platform for their coherent manipulation. They also utilize the circuit QED architecture as a way to probe spin correlations at low temperature.

Transistor and memory devices based on novel organic and biomaterials

NASA Astrophysics Data System (ADS)

Tseng, Jia-Hung

Organic semiconductor devices have aroused considerable interest because of the enormous potential in many technological applications. Organic electroluminescent devices have been extensively applied in display technology. Rapid progress has also been made in transistor and memory devices. This thesis considers aspects of the transistor based on novel organic single crystals and memory devices using hybrid nanocomposites comprising polymeric/inorganic nanoparticles, and biomolecule/quantum dots. Organic single crystals represent highly ordered structures with much less imperfections compared to amorphous thin films for probing the intrinsic charge transport in transistor devices. We demonstrate that free-standing, thin organic single crystals with natural flexing ability can be fabricated as flexible transistors. We study the surface properties of the organic crystals to determine a nearly perfect surface leading to high performance transistors. The flexible transistors can maintain high performance under reversible bending conditions. Because of the high quality crystal technique, we further develop applications on organic complementary circuits and organic single crystal photovoltaics. In the second part, two aspects of memory devices are studied. We examine the charge transfer process between conjugated polymers and metal nanoparticles. This charge transfer process is essential for the conductance switching in nanoseconds to induce the memory effect. Under the reduction condition, the charge transfer process is eliminated as well as the memory effect, raising the importance of coupling between conjugated systems and nanoparticle accepters. The other aspect of memory devices focuses on the interaction of virus biomolecules with quantum dots or metal nanoparticles in the devices. We investigate the impact of memory function on the hybrid bio-inorganic system. We perform an experimental analysis of the charge storage activation energy in tobacco mosaic virus with platinum nanoparticles. It is established that the effective barrier height in the materials systems needs to be further engineered in order to have sufficiently long retention times. Finally other novel architectures such as negative differential resistance devices and high density memory arrays are investigated for their influence on memory technology.

Organic membrane photonic integrated circuits (OMPICs).

PubMed

Amemiya, Tomohiro; Kanazawa, Toru; Hiratani, Takuo; Inoue, Daisuke; Gu, Zhichen; Yamasaki, Satoshi; Urakami, Tatsuhiro; Arai, Shigehisa

2017-08-07

We propose the concept of organic membrane photonic integrated circuits (OMPICs), which incorporate various functions needed for optical signal processing into a flexible organic membrane. We describe the structure of several devices used within the proposed OMPICs (e.g., transmission lines, I/O couplers, phase shifters, photodetectors, modulators), and theoretically investigate their characteristics. We then present a method of fabricating the photonic devices monolithically in an organic membrane and demonstrate the operation of transmission lines and I/O couplers, the most basic elements of OMPICs.

Connector tube for a turbine rotor cooling circuit

DOEpatents

Li, Ming Cheng

2003-06-24

A tubular connector adapted to extend between two tubular components comprising a tubular body having an internal diameter, a first free end including an annular radial flange having a tapered surface adapted to engage a complementary seating surface on a first of the two tubular components, the internal diameter remaining constant through the first free end; and a second free end having an annular bulbous shape adapted to seat within a cylindrical end of a second of the two tubular components.

Connector tube for a turbine rotor cooling circuit

DOEpatents

Li, Ming Cheng

2002-01-01

A tubular connector adapted to extend between two tubular components comprising a tubular body having an internal diameter, a first free end including an annular radial flange having a tapered surface adapted to engage a complementary seating surface on a first of the two tubular components, the internal diameter remaining constant through the first free end; and a second free end having an annular bulbous shape adapted to seat within a cylindrical end of a second of the two tubular components.

How visual illusions illuminate complementary brain processes: illusory depth from brightness and apparent motion of illusory contours

PubMed Central

Grossberg, Stephen

2014-01-01

Neural models of perception clarify how visual illusions arise from adaptive neural processes. Illusions also provide important insights into how adaptive neural processes work. This article focuses on two illusions that illustrate a fundamental property of global brain organization; namely, that advanced brains are organized into parallel cortical processing streams with computationally complementary properties. That is, in order to process certain combinations of properties, each cortical stream cannot process complementary properties. Interactions between these streams, across multiple processing stages, overcome their complementary deficiencies to compute effective representations of the world, and to thereby achieve the property of complementary consistency. The two illusions concern how illusory depth can vary with brightness, and how apparent motion of illusory contours can occur. Illusory depth from brightness arises from the complementary properties of boundary and surface processes, notably boundary completion and surface-filling in, within the parvocellular form processing cortical stream. This illusion depends upon how surface contour signals from the V2 thin stripes to the V2 interstripes ensure complementary consistency of a unified boundary/surface percept. Apparent motion of illusory contours arises from the complementary properties of form and motion processes across the parvocellular and magnocellular cortical processing streams. This illusion depends upon how illusory contours help to complete boundary representations for object recognition, how apparent motion signals can help to form continuous trajectories for target tracking and prediction, and how formotion interactions from V2-to-MT enable completed object representations to be continuously tracked even when they move behind intermittently occluding objects through time. PMID:25389399

Organic printed photonics: From microring lasers to integrated circuits

PubMed Central

Zhang, Chuang; Zou, Chang-Ling; Zhao, Yan; Dong, Chun-Hua; Wei, Cong; Wang, Hanlin; Liu, Yunqi; Guo, Guang-Can; Yao, Jiannian; Zhao, Yong Sheng

2015-01-01

A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices. PMID:26601256

Organic printed photonics: From microring lasers to integrated circuits.

PubMed

Zhang, Chuang; Zou, Chang-Ling; Zhao, Yan; Dong, Chun-Hua; Wei, Cong; Wang, Hanlin; Liu, Yunqi; Guo, Guang-Can; Yao, Jiannian; Zhao, Yong Sheng

2015-09-01

A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 10(5), which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

Assessing hemispheric specialization for processing arithmetic skills in adults: A functional transcranial doppler ultrasonography (fTCD) study.

PubMed

Connaughton, Veronica M; Amiruddin, Azhani; Clunies-Ross, Karen L; French, Noel; Fox, Allison M

2017-05-01

A major model of the cerebral circuits that underpin arithmetic calculation is the triple-code model of numerical processing. This model proposes that the lateralization of mathematical operations is organized across three circuits: a left-hemispheric dominant verbal code; a bilateral magnitude representation of numbers and a bilateral Arabic number code. This study simultaneously measured the blood flow of both middle cerebral arteries using functional transcranial Doppler ultrasonography to assess hemispheric specialization during the performance of both language and arithmetic tasks. The propositions of the triple-code model were assessed in a non-clinical adult group by measuring cerebral blood flow during the performance of multiplication and subtraction problems. Participants were 17 adults aged between 18-27 years. We obtained laterality indices for each type of mathematical operation and compared these in participants with left-hemispheric language dominance. It was hypothesized that blood flow would lateralize to the left hemisphere during the performance of multiplication operations, but would not lateralize during the performance of subtraction operations. Hemispheric blood flow was significantly left lateralized during the multiplication task, but was not lateralized during the subtraction task. Compared to high spatial resolution neuroimaging techniques previously used to measure cerebral lateralization, functional transcranial Doppler ultrasonography is a cost-effective measure that provides a superior temporal representation of arithmetic cognition. These results provide support for the triple-code model of arithmetic processing and offer complementary evidence that multiplication operations are processed differently in the adult brain compared to subtraction operations. Copyright © 2017 Elsevier B.V. All rights reserved.

78 FR 26669 - Self-Regulatory Organizations; EDGX Exchange, Inc.; Notice of Filing and Immediate Effectiveness...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-05-07

... gigabyte Copper circuit; $750 per physical port that connects to the System via a 1 gigabyte Fiber circuit; and $1,000 per physical port that connects to the System via a 10 gigabyte Fiber circuit. The Exchange... physical port that connects to the System via a 1 gigabyte Fiber circuit from $750 to $1,000; (ii) increase...

78 FR 8680 - Self-Regulatory Organizations; BATS Exchange, Inc.; Notice of Filing and Immediate Effectiveness...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-02-06

... changes to the market- wide circuit breaker on a pilot basis for a period scheduled to start on February 4... circuit breaker pilot to April 8, 2013 in order for the implementation date for the market-wide circuit..., SR-NASD-98-27, and SR-Phlx-98-15). Once a Rule 11.18 circuit breaker is in effect, trading in all...

78 FR 8659 - Self-Regulatory Organizations; BATS Y-Exchange, Inc.; Notice of Filing and Immediate...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-02-06

... proposed changes to the market- wide circuit breaker on a pilot basis for a period scheduled to start on... circuit breaker pilot to April 8, 2013 in order for the implementation date for the market-wide circuit..., SR-NASD-98-27, and SR-Phlx-98-15). Once a Rule 11.18 circuit breaker is in effect, trading in all...

Mapping sensory circuits by anterograde trans-synaptic transfer of recombinant rabies virus

PubMed Central

Zampieri, Niccolò; Jessell, Thomas M.; Murray, Andrew J.

2014-01-01

Summary Primary sensory neurons convey information from the external world to relay circuits within the central nervous system (CNS), but the identity and organization of the neurons that process incoming sensory information remains sketchy. Within the CNS viral tracing techniques that rely on retrograde trans-synaptic transfer provide a powerful tool for delineating circuit organization. Viral tracing of the circuits engaged by primary sensory neurons has, however, been hampered by the absence of a genetically tractable anterograde transfer system. In this study we demonstrate that rabies virus can infect sensory neurons in the somatosensory system, is subject to anterograde trans-synaptic transfer from primary sensory to spinal target neurons, and can delineate output connectivity with third-order neurons. Anterograde trans-synaptic transfer is a feature shared by other classes of primary sensory neurons, permitting the identification and potentially the manipulation of neural circuits processing sensory feedback within the mammalian CNS. PMID:24486087

Amorphous In-Ga-Zn-O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays

NASA Astrophysics Data System (ADS)

Chen, Charlene; Abe, Katsumi; Fung, Tze-Ching; Kumomi, Hideya; Kanicki, Jerzy

2009-03-01

In this paper, we analyze application of amorphous In-Ga-Zn-O thin film transistors (a-InGaZnO TFTs) to current-scaling pixel electrode circuit that could be used for 3-in. quarter video graphics array (QVGA) full color active-matrix organic light-emitting displays (AM-OLEDs). Simulation results, based on a-InGaZnO TFT and OLED experimental data, show that both device sizes and operational voltages can be reduced when compare to the same circuit using hydrogenated amorphous silicon (a-Si:H) TFTs. Moreover, the a-InGaZnO TFT pixel circuit can compensate for the drive TFT threshold voltage variation (ΔVT) within acceptable operating error range.

V-TECS Guide for Tractor Mechanic.

ERIC Educational Resources Information Center

Benson, Robert T.

This guide contains a course outline for a tractor mechanic course. The outline is organized by 15 duties: performing general skills and maintaining and servicing storage battery, ignition circuit, the cooling system, the charging circuit, the starting circuit, gasoline fuel system, diesel fuel system, basic engine, lubrication system, clutches,…

30 CFR 57.2 - Definitions.

Code of Federal Regulations, 2011 CFR

2011-07-01

... which is initiated by a safety fuse. Blasting circuit means the electrical circuit used to fire one or... enclosure through which an electric circuit is carried to one or more cables from a single incoming feed... organization which hires one or more persons to work for wages or salary. Emulsion means an explosive material...

30 CFR 57.2 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-07-01

... which is initiated by a safety fuse. Blasting circuit means the electrical circuit used to fire one or... enclosure through which an electric circuit is carried to one or more cables from a single incoming feed... organization which hires one or more persons to work for wages or salary. Emulsion means an explosive material...

30 CFR 57.2 - Definitions.

Code of Federal Regulations, 2013 CFR

2013-07-01

... which is initiated by a safety fuse. Blasting circuit means the electrical circuit used to fire one or... enclosure through which an electric circuit is carried to one or more cables from a single incoming feed... organization which hires one or more persons to work for wages or salary. Emulsion means an explosive material...

[Person-organization fit as a mediator of relationship between work environment and stress among social workers].

PubMed

Waszkowska, Małlgorzata; Andysz, Aleksandra; Merecz, Dorota

2014-01-01

Occupational stress of social workers is associated with various psychosocial hazards in the work environment. Some of them affect person-organization fit (P-O fit). The aim of the study was to verify a hypothesis on the mediating role of P-O fit in the relationship between work environment and stress. The research was based on a sample of 500 social workers directly involved in social work. The data were obtained using the Person-Organization Fit Questionnaire by Czarnota-Bojarska, the Work Environment Questionnaire developed by the Department of Occupational Psychology, Nofer Institute of Occupational Medicine, Łódź, and the Perceived Stress Scale (PSS-10) by Cohen et al. As revealed by the regression analysis of the 4 analyzed work environment factors, only organizational politics was significantly related with perceived stress. Complementary and supplementary dimensions of P-O fit and identification with organization were the mediators of the relationship between organizational policies and stress, but only complementary fit proved to be a total mediator. The results of the study suggest that person-organization fit, especially its complementary aspect, is an essential determinant of accomplishing the core functions of social work and good practice among social workers.

Open external circuit for microbial fuel cell sensor to monitor the nitrate in aquatic environment.

PubMed

Wang, Donglin; Liang, Peng; Jiang, Yong; Liu, Panpan; Miao, Bo; Hao, Wen; Huang, Xia

2018-07-15

This study employed an open external circuit, rather than a closed circuit applied in previous studies, to operate an microbial fuel cell (MFC) sensor for real-time nitrate monitoring, and achieved surprisingly greater sensitivity (4.42 ± 0.3-6.66 ± 0.4 mV/(mg/L)) when the nitrate was at a concentration of 10-40 mg/L, compared to that of the MFC sensor with a closed circuit (0.8 ± 0.05-1.6 ± 0.1 mV/(mg/L)). The MFC sensor operated in open circuit (O-MFC sensor) delivered much more stable performance than that operated in closed circuit (C-MFC sensor) when affected by organic matter (NaAc). The sensitivity of O-MFC sensor was twice that of C-MFC sensor at a low background concentration of organic matter. When organic matter reached a high concentration, the sensitivity of O-MFC sensor remained at an acceptable level, while that of C-MFC sensor dropped to almost zero. Challenged by a combined shock of organic matter and nitrate, O-MFC sensor delivered evident electrical signals for nitrate warning, while C-MFC failed. Another novel feature of this study lies in a new mathematical model to examine the bioanode process of nitrate monitoring. It revealed that lower capacitance of the bioanode in O-MFC was the major contributor to the improved sensitivity of the device. Copyright © 2018 Elsevier B.V. All rights reserved.

A Behavior-Based Circuit Model of How Outcome Expectations Organize Learned Behavior in Larval "Drosophila"

ERIC Educational Resources Information Center

Schleyer, Michael; Saumweber, Timo; Nahrendorf, Wiebke; Fischer, Benjamin; von Alpen, Desiree; Pauls, Dennis; Thum, Andreas; Gerber, Bertram

2011-01-01

Drosophila larvae combine a numerically simple brain, a correspondingly moderate behavioral complexity, and the availability of a rich toolbox for transgenic manipulation. This makes them attractive as a study case when trying to achieve a circuit-level understanding of behavior organization. From a series of behavioral experiments, we suggest a…

75 FR 48390 - Self-Regulatory Organizations; NASDAQ OMX BX, Inc.; Order Approving a Proposed Rule Change...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-08-10

... SECURITIES AND EXCHANGE COMMISSION [Release No. 34-62638; File No. SR-BX-2010-043] Self-Regulatory Organizations; NASDAQ OMX BX, Inc.; Order Approving a Proposed Rule Change Relating to Pricing for Direct... establish pricing for 10Gb direct circuit connections and codify pricing for 1Gb direct circuit connections...

78 FR 8648 - Self-Regulatory Organizations; EDGX Exchange, Inc.; Notice of Filing and Immediate Effectiveness...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-02-06

... changes to the market- wide circuit breaker on a pilot basis for a period scheduled to start on February 4... circuit breaker pilot to April 8, 2013 in order for the implementation date for the market-wide circuit...-Amex-98-09, SR-BSE-98-06, SR-CHX-98-08, SR-NASD-98-27, and SR-Phlx-98-15). Once a Rule 11.14 circuit...

Study on the transient properties of amorphous solar cells

NASA Astrophysics Data System (ADS)

Smrity, Manu; Dhariwal, S. R.

2016-05-01

The transient response for the solar cell when switched off from steady-state can provide useful information about the quality of the material used for fabrication of the device. In this paper we shall discuss the photovoltaic transients of amorphous silicon solar cells when switched off from open circuit configuration and illuminated by electrical pulse. The open-circuit voltage (Voc) decay can be performed by two methods, by optical excitation and by electrical pulse. When one of carriers has a concentration much higher than the other the photoconductivity is dominated by majority carriers; in that case the Voc decay which depends on the np product can be used as complementary method for obtaining information about the minority carriers. Also the series resistance drop in an electrical Voc decay method can be used to obtain a IJ't product as an additional information regarding the material of the device.

Transversal Clifford gates on folded surface codes

DOE PAGES

Moussa, Jonathan E.

2016-10-12

Surface and color codes are two forms of topological quantum error correction in two spatial dimensions with complementary properties. Surface codes have lower-depth error detection circuits and well-developed decoders to interpret and correct errors, while color codes have transversal Clifford gates and better code efficiency in the number of physical qubits needed to achieve a given code distance. A formal equivalence exists between color codes and folded surface codes, but it does not guarantee the transferability of any of these favorable properties. However, the equivalence does imply the existence of constant-depth circuit implementations of logical Clifford gates on folded surfacemore » codes. We achieve and improve this result by constructing two families of folded surface codes with transversal Clifford gates. This construction is presented generally for qudits of any dimension. Lastly, the specific application of these codes to universal quantum computation based on qubit fusion is also discussed.« less

Capacitive Micro Pressure Sensor Integrated with a Ring Oscillator Circuit on Chip

PubMed Central

Dai, Ching-Liang; Lu, Po-Wei; Chang, Chienliu; Liu, Cheng-Yang

2009-01-01

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0–300 kPa. PMID:22303167

Capacitive micro pressure sensor integrated with a ring oscillator circuit on chip.

PubMed

Dai, Ching-Liang; Lu, Po-Wei; Chang, Chienliu; Liu, Cheng-Yang

2009-01-01

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0-300 kPa.

Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

NASA Astrophysics Data System (ADS)

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-07-01

Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

Recent progress in GeSn growth and GeSn-based photonic devices

NASA Astrophysics Data System (ADS)

Zheng, Jun; Liu, Zhi; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

2018-06-01

The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content exceeds 6%. It shows great potential for laser use in optoelectronic integration circuits (OEIC) on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photodetectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the monolithic integration of Si photonic circuits by the complementary metal–oxide–semiconductor (CMOS) technology. Project supported by the Beijing Natural Science Foundation (No. 4162063) and the Youth Innovation Promotion Association of CAS (No. 2015091).

Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications

DOEpatents

Schwank, James R.; Shaneyfelt, Marty R.; Draper, Bruce L.; Dodd, Paul E.

2001-01-01

A silicon-on-insulator (SOI) field-effect transistor (FET) and a method for making the same are disclosed. The SOI FET is characterized by a source which extends only partially (e.g. about half-way) through the active layer wherein the transistor is formed. Additionally, a minimal-area body tie contact is provided with a short-circuit electrical connection to the source for reducing floating body effects. The body tie contact improves the electrical characteristics of the transistor and also provides an improved single-event-upset (SEU) radiation hardness of the device for terrestrial and space applications. The SOI FET also provides an improvement in total-dose radiation hardness as compared to conventional SOI transistors fabricated without a specially prepared hardened buried oxide layer. Complementary n-channel and p-channel SOI FETs can be fabricated according to the present invention to form integrated circuits (ICs) for commercial and military applications.

Noise and linearity optimization methods for a 1.9GHz low noise amplifier.

PubMed

Guo, Wei; Huang, Da-Quan

2003-01-01

Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for the cascode architecture, a widely used circuit structure in LNA designs, is presented. The noise and the linearity improvement techniques for cascode structures are also developed and have been proven by computer simulating experiments. Theoretical analysis and simulation results showed that, for cascode structure LNAs, the first metallic oxide semiconductor field effect transistor (MOSFET) dominates the noise performance of the LNA, while the second MOSFET contributes more to the linearity. A conclusion is thus obtained that the first and second MOSFET of the LNA can be designed to optimize the noise performance and the linearity performance separately, without trade-offs. The 1.9GHz Complementary Metal-Oxide-Semiconductor (CMOS) LNA simulation results are also given as an application of the developed theory.

An analog front-end bipolar-transistor integrated circuit for the SDC silicon tracker

NASA Astrophysics Data System (ADS)

Kipnis, I.; Spieler, H.; Collins, T.

1994-08-01

A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDC silicon tracker The IC was designed and tested at LBL and was fabricated using AT&T's CBIC-U2, 4 GHz f/sub /spl tau// complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 /spl mu/m pitch double-sided silicon strip detector. The chip measures 6.8 mm/spl times/3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. RMS at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16 nsec time-walk for 1.25 to 10 fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a /spl Phi/=10/sup 14/ protons/cm/sup 2/ have been performed on the IC, demonstrating the radiation hardness of the complementary bipolar process.

Organic Light-Emitting Diode-on-Silicon Pixel Circuit Using the Source Follower Structure with Active Load for Microdisplays

NASA Astrophysics Data System (ADS)

Kwak, Bong-Choon; Lim, Han-Sin; Kwon, Oh-Kyong

2011-03-01

In this paper, we propose a pixel circuit immune to the electrical characteristic variation of organic light-emitting diodes (OLEDs) for organic light-emitting diode-on-silicon (OLEDoS) microdisplays with a 0.4 inch video graphics array (VGA) resolution and a 6-bit gray scale. The proposed pixel circuit is implemented using five p-channel metal oxide semiconductor field-effect transistors (MOSFETs) and one storage capacitor. The proposed pixel circuit has a source follower with a diode-connected transistor as an active load for improving the immunity against the electrical characteristic variation of OLEDs. The deviation in the measured emission current ranges from -0.165 to 0.212 least significant bit (LSB) among 11 samples while the anode voltage of OLED is 0 V. Also, the deviation in the measured emission current ranges from -0.262 to 0.272 LSB in pixel samples, while the anode voltage of OLED varies from 0 to 2.5 V owing to the electrical characteristic variation of OLEDs.

Programmed coherent coupling in a synthetic DNA-based excitonic circuit

NASA Astrophysics Data System (ADS)

Boulais, Étienne; Sawaya, Nicolas P. D.; Veneziano, Rémi; Andreoni, Alessio; Banal, James L.; Kondo, Toru; Mandal, Sarthak; Lin, Su; Schlau-Cohen, Gabriela S.; Woodbury, Neal W.; Yan, Hao; Aspuru-Guzik, Alán; Bathe, Mark

2018-02-01

Natural light-harvesting systems spatially organize densely packed chromophore aggregates using rigid protein scaffolds to achieve highly efficient, directed energy transfer. Here, we report a synthetic strategy using rigid DNA scaffolds to similarly program the spatial organization of densely packed, discrete clusters of cyanine dye aggregates with tunable absorption spectra and strongly coupled exciton dynamics present in natural light-harvesting systems. We first characterize the range of dye-aggregate sizes that can be templated spatially by A-tracts of B-form DNA while retaining coherent energy transfer. We then use structure-based modelling and quantum dynamics to guide the rational design of higher-order synthetic circuits consisting of multiple discrete dye aggregates within a DX-tile. These programmed circuits exhibit excitonic transport properties with prominent circular dichroism, superradiance, and fast delocalized exciton transfer, consistent with our quantum dynamics predictions. This bottom-up strategy offers a versatile approach to the rational design of strongly coupled excitonic circuits using spatially organized dye aggregates for use in coherent nanoscale energy transport, artificial light-harvesting, and nanophotonics.

Few-Layer MoS2-Organic Thin-Film Hybrid Complementary Inverter Pixel Fabricated on a Glass Substrate.

PubMed

Lee, Hee Sung; Shin, Jae Min; Jeon, Pyo Jin; Lee, Junyeong; Kim, Jin Sung; Hwang, Hyun Chul; Park, Eunyoung; Yoon, Woojin; Ju, Sang-Yong; Im, Seongil

2015-05-13

Few-layer MoS2-organic thin-film hybrid complementary inverters demonstrate a great deal of device performance with a decent voltage gain of ≈12, a few hundred pW power consumption, and 480 Hz switching speed. As fabricated on glass, this hybrid CMOS inverter operates as a light-detecting pixel as well, using a thin MoS2 channel. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Speed, High-Resolution Time-to-Digital Conversion

NASA Technical Reports Server (NTRS)

Katz, Richard; Kleyner, Igor; Garcia, Rafael

2013-01-01

This innovation is a series of time-tag pulses from a photomultiplier tube, featuring short time interval between pulses (e.g., 2.5 ns). Using the previous art, dead time between pulses is too long, or too much hardware is required, including a very-high-speed demultiplexer. A faster method is needed. The goal of this work is to provide circuits to time-tag pulses that arrive at a high rate using the hardwired logic in an FPGA - specifically the carry chain - to create what is (in effect) an analog delay line. High-speed pulses travel down the chain in a "wave." For instance, a pulse train has been demonstrated from a 1- GHz source reliably traveling down the carry chain. The size of the carry chain is over 10 ns in the time domain. Thus, multiple pulses will travel down the carry chain in a wave simultaneously. A register clocked by a low-skew clock takes a "snapshot" of the wave. Relatively simple logic can extract the pulses from the snapshot picture by detecting the transitions between logic states. The propagation delay of CMOS (complementary metal oxide semiconductor) logic circuits will differ and/or change as a result of temperature, voltage, age, radiation, and manufacturing variances. The time-to-digital conversion circuits can be calibrated with test signals, or the changes can be nulled by a separate on-die calibration channel, in a closed loop circuit.

Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses

PubMed Central

Fukuda, Kenjiro; Sekine, Tomohito; Shiwaku, Rei; Morimoto, Takuya; Kumaki, Daisuke; Tokito, Shizuo

2016-01-01

The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates that have been removed. The fabricated organic circuits with total device thicknesses down to 350 nm have electrical performance levels close to those fabricated on conventional flexible substrates. Moreover, they exhibit excellent mechanical robustness, whereby their static and dynamic electrical characteristics do not change even under 50% compressive strain. Tests using systematically applied compressive strains reveal that these free-standing organic transistors possess anisotropic mechanical stability, and a strain model for a multilayer stack can be used to describe the strain in this sort of ultra-thin device. These results show the feasibility of ultimate-thin organic electronic devices using free-standing constructions. PMID:27278828

30 CFR 56.2 - Definitions.

Code of Federal Regulations, 2013 CFR

2013-07-01

... circuit used to fire one or more electric blasting caps. Blasting switch means a switch used to connect a... circuit is carried to one or more cables from a single incoming feed line, each cable circuit being... or salary in the service of an employer. Employer means a person or organization which hires one or...

30 CFR 56.2 - Definitions.

Code of Federal Regulations, 2011 CFR

2011-07-01

... circuit used to fire one or more electric blasting caps. Blasting switch means a switch used to connect a... circuit is carried to one or more cables from a single incoming feed line, each cable circuit being... or salary in the service of an employer. Employer means a person or organization which hires one or...

30 CFR 56.2 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-07-01

... circuit used to fire one or more electric blasting caps. Blasting switch means a switch used to connect a... circuit is carried to one or more cables from a single incoming feed line, each cable circuit being... or salary in the service of an employer. Employer means a person or organization which hires one or...

Series circuit of organic thin-film solar cells for conversion of water into hydrogen.

PubMed

Aoki, Atsushi; Naruse, Mitsuru; Abe, Takayuki

2013-07-22

A series circuit of bulk hetero-junction (BHJ) organic thin-film solar cells (OSCs) is investigated for electrolyzing water to gaseous hydrogen and oxygen. The BHJ OSCs applied consist of poly(3-hexylthiophene) as a donor and [6,6]-phenyl C61 butyric acid methyl ester as an acceptor. A series circuit of six such OSC units has an open circuit voltage (V(oc)) of 3.4 V, which is enough to electrolyze water. The short circuit current (J(sc)), fill factor (FF), and energy conversion efficiency (η) are independent of the number of unit cells. A maximum electric power of 8.86 mW cm(-2) is obtained at the voltage of 2.35 V. By combining a water electrolysis cell with the series circuit solar cells, the electrolyzing current and voltage obtained are 1.09 mA and 2.3 V under a simulated solar light irradiation (100 mW cm(-2), AM1.5G), and in one hour 0.65 mL hydrogen is generated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Active-Matrix Organic Light Emission Diode Pixel Circuit for Suppressing and Compensating for the Threshold Voltage Degradation of Hydrogenated Amorphous Silicon Thin Film Transistors

NASA Astrophysics Data System (ADS)

Shin, Hee-Sun; Lee, Won-Kyu; Park, Sang-Guen; Kuk, Seung-Hee; Han, Min-Koo

2009-03-01

A new hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) pixel circuit for active-matrix organic light emission diodes (AM-OLEDs), which significantly compensates the OLED current degradation by memorizing the threshold voltage of driving TFT and suppresses the threshold voltage shift of a-Si:H TFTs by negative bias annealing, is proposed and fabricated. During the first half of each frame, the driving TFT of the proposed pixel circuit supplies current to the OLED, which is determined by modified data voltage in the compensation scheme. The proposed pixel circuit was able to compensate the threshold voltage shift of the driving TFT as well as the OLED. During the remaining half of each frame, the proposed pixel circuit induces the recovery of the threshold voltage degradation of a-Si:H TFTs owing to the negative bias annealing. The experimental results show that the proposed pixel circuit was able to successfully compensate for the OLED current degradation and suppress the threshold voltage degradation of the driving TFT.

Solution-processed hybrid organic-inorganic complementary thin-film transistor inverter

NASA Astrophysics Data System (ADS)

Cheong, Heajeong; Kuribara, Kazunori; Ogura, Shintaro; Fukuda, Nobuko; Yoshida, Manabu; Ushijima, Hirobumi; Uemura, Sei

2016-04-01

We investigated hybrid organic-inorganic complementary inverters with a solution-processed indium-gallium-zinc-oxide (IGZO) n-channel thin-film transistor (TFT) and p-channel TFTs using the high-uniformity polymer poly[2,5-bis(alkyl)pyrrolo[3,4-c]pyrrolo-1,4(2H,5H)-dione-alt-5,5-di(thiophene-2-yl)-2,2-(E)-2-(2-(thiophen-2-yl)vinyl)thiophene] (PDVT-10). The IGZO TFT was fabricated at 150 °C for 1 min. It showed a high field-effect mobility of 0.9 cm2·V-1·s-1 and a high on/off current ratio of 107. A hybrid complementary inverter was fabricated by combining IGZO with a PDVT-10 thin-film transistor and its operation was confirmed.

[Mathematical apparatus of the circuit theory in modeling of heat transfer upon extreme heating of an organism].

PubMed

2010-01-01

The mathematical model of heat transfer in whole-body hyperthermia, developed earlier by the author, has been refined using the mathematical apparatus of the circuit theory. The model can be used to calculate the temperature of each organ, which can increase the efficacy and safety of the immersion-convection technique of whole-body hyperthermia.

Scaling of Topologically Similar Functional Modules Defines Mouse Primary Auditory and Somatosensory Microcircuitry

PubMed Central

Sadovsky, Alexander J.

2013-01-01

Mapping the flow of activity through neocortical microcircuits provides key insights into the underlying circuit architecture. Using a comparative analysis we determined the extent to which the dynamics of microcircuits in mouse primary somatosensory barrel field (S1BF) and auditory (A1) neocortex generalize. We imaged the simultaneous dynamics of up to 1126 neurons spanning multiple columns and layers using high-speed multiphoton imaging. The temporal progression and reliability of reactivation of circuit events in both regions suggested common underlying cortical design features. We used circuit activity flow to generate functional connectivity maps, or graphs, to test the microcircuit hypothesis within a functional framework. S1BF and A1 present a useful test of the postulate as both regions map sensory input anatomically, but each area appears organized according to different design principles. We projected the functional topologies into anatomical space and found benchmarks of organization that had been previously described using physiology and anatomical methods, consistent with a close mapping between anatomy and functional dynamics. By comparing graphs representing activity flow we found that each region is similarly organized as highlighted by hallmarks of small world, scale free, and hierarchical modular topologies. Models of prototypical functional circuits from each area of cortex were sufficient to recapitulate experimentally observed circuit activity. Convergence to common behavior by these models was accomplished using preferential attachment to scale from an auditory up to a somatosensory circuit. These functional data imply that the microcircuit hypothesis be framed as scalable principles of neocortical circuit design. PMID:23986241

Review of Millimeter-Wave Integrated Circuits With Low Power Consumption for High Speed Wireless Communications

NASA Astrophysics Data System (ADS)

Ellinger, Frank; Fritsche, David; Tretter, Gregor; Leufker, Jan Dirk; Yodprasit, Uroschanit; Carta, C.

2017-01-01

In this paper we review high-speed radio-frequency integrated circuits operating up to 210 GHz and present selected state-of-the-art circuits with leading-edge performance, which we have designed at our chair. The following components are discussed employing bipolar complementary metal oxide semiconductors (BiCMOS) technologies: a 200 GHz amplifier with 17 dB gain and around 9 dB noise figure consuming only 18 mW, a 200 GHz down mixer with 5.5 dB conversion gain and 40 mW power consumption, a 190 GHz receiver with 47 dB conversion gain and 11 dB noise figure and a 60 GHz power amplifier with 24.5 dBm output power and 12.9 % power added efficiency (PAE). Moreover, we report on a single-core flash CMOS analogue-to-digital converter (ADC) with 3 bit resolution and a speed of 24 GS/s. Finally, we discuss a 60 GHz on-off keying (OOK) BiCMOS transceiver chip set. The wireless transmission of data with 5 Gb/s at 42 cm distance between transmitter and receiver was verified by experiments. The complete transceiver consumes 396 mW.

Twenty-four-micrometer-pitch microelectrode array with 6912-channel readout at 12 kHz via highly scalable implementation for high-spatial-resolution mapping of action potentials.

PubMed

Ogi, Jun; Kato, Yuri; Matoba, Yoshihisa; Yamane, Chigusa; Nagahata, Kazunori; Nakashima, Yusaku; Kishimoto, Takuya; Hashimoto, Shigeki; Maari, Koichi; Oike, Yusuke; Ezaki, Takayuki

2017-12-19

A 24-μm-pitch microelectrode array (MEA) with 6912 readout channels at 12 kHz and 23.2-μV rms random noise is presented. The aim is to reduce noise in a "highly scalable" MEA with a complementary metal-oxide-semiconductor integration circuit (CMOS-MEA), in which a large number of readout channels and a high electrode density can be expected. Despite the small dimension and the simplicity of the in-pixel circuit for the high electrode-density and the relatively large number of readout channels of the prototype CMOS-MEA chip developed in this work, the noise within the chip is successfully reduced to less than half that reported in a previous work, for a device with similar in-pixel circuit simplicity and a large number of readout channels. Further, the action potential was clearly observed on cardiomyocytes using the CMOS-MEA. These results indicate the high-scalability of the CMOS-MEA. The highly scalable CMOS-MEA provides high-spatial-resolution mapping of cell action potentials, and the mapping can aid understanding of complex activities in cells, including neuron network activities.

Enhanced performance of polymer solar cells by employing a ternary cascade energy structure.

PubMed

An, Qiaoshi; Zhang, Fujun; Li, Lingliang; Zhuo, Zuliang; Zhang, Jian; Tang, Weihua; Teng, Feng

2014-08-14

We present a route to successfully tackle the two main limitations, low open circuit voltage (Voc) and limited short circuit-density (Jsc), of polymer solar cells (PSCs) based on poly(3-hexylthiophene) (P3HT) as an electron-donor. The indene-C60 bisadduct (ICBA) was selected as an electron acceptor to improve the open circuit voltage (Voc). The narrow band gap polymer poly[(4,8-bis-(2-ethylhexyloxy)-benzo[1,2-b:4,5-b']dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene)-2,6-diyl] (PBDTTT-C), as a complementary electron-donor material, was doped into the host system of P3HT:ICBA to form ternary cascade energy structured PSCs with increased Jsc. The power conversion efficiency (PCE) of P3HT:ICBA-based cells was improved from 3.32% to 4.38% by doping with 3 wt% PBDTTT-C with 1 min 150 °C annealing treatment. The 4.38% PCE of ternary PSCs is still larger than the 3.79% PCE of PSCs based on P3HT:ICBA with 10 minutes 150 °C annealing treatment.

Light-Triggered Ternary Device and Inverter Based on Heterojunction of van der Waals Materials.

PubMed

Shim, Jaewoo; Jo, Seo-Hyeon; Kim, Minwoo; Song, Young Jae; Kim, Jeehwan; Park, Jin-Hong

2017-06-27

Multivalued logic (MVL) devices/circuits have received considerable attention because the binary logic used in current Si complementary metal-oxide-semiconductor (CMOS) technology cannot handle the predicted information throughputs and energy demands of the future. To realize MVL, the conventional transistor platform needs to be redesigned to have two or more distinctive threshold voltages (V TH s). Here, we report a finding: the photoinduced drain current in graphene/WSe 2 heterojunction transistors unusually decreases with increasing gate voltage under illumination, which we refer to as the light-induced negative differential transconductance (L-NDT) phenomenon. We also prove that such L-NDT phenomenon in specific bias ranges originates from a variable potential barrier at a graphene/WSe 2 junction due to a gate-controllable graphene electrode. This finding allows us to conceive graphene/WSe 2 -based MVL logic circuits by using the I D -V G characteristics with two distinctive V TH s. Based on this finding, we further demonstrate a light-triggered ternary inverter circuit with three stable logical states (ΔV out of each state <0.05 V). Our study offers the pathway to substantialize MVL systems.

Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations.

PubMed

Kim, Dae-Hyeong; Song, Jizhou; Choi, Won Mook; Kim, Hoon-Sik; Kim, Rak-Hwan; Liu, Zhuangjian; Huang, Yonggang Y; Hwang, Keh-Chih; Zhang, Yong-wei; Rogers, John A

2008-12-02

Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enable new biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90 degrees in approximately 1 cm) and linear stretching to "rubber-band" levels of strain (e.g., up to approximately 140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics.

Engineering scalable biological systems

PubMed Central

2010-01-01

Synthetic biology is focused on engineering biological organisms to study natural systems and to provide new solutions for pressing medical, industrial and environmental problems. At the core of engineered organisms are synthetic biological circuits that execute the tasks of sensing inputs, processing logic and performing output functions. In the last decade, significant progress has been made in developing basic designs for a wide range of biological circuits in bacteria, yeast and mammalian systems. However, significant challenges in the construction, probing, modulation and debugging of synthetic biological systems must be addressed in order to achieve scalable higher-complexity biological circuits. Furthermore, concomitant efforts to evaluate the safety and biocontainment of engineered organisms and address public and regulatory concerns will be necessary to ensure that technological advances are translated into real-world solutions. PMID:21468204

CSC Tip Sheets: Working with Institutional Partners

EPA Pesticide Factsheets

Partner with organizations, such as other jurisdictions, utilities, complementary programs, community-based organizations, and others, can help you implement your program and achieve your collective goals.

End-of-fabrication CMOS process monitor

NASA Technical Reports Server (NTRS)

Buehler, M. G.; Allen, R. A.; Blaes, B. R.; Hannaman, D. J.; Lieneweg, U.; Lin, Y.-S.; Sayah, H. R.

1990-01-01

A set of test 'modules' for verifying the quality of a complementary metal oxide semiconductor (CMOS) process at the end of the wafer fabrication is documented. By electrical testing of specific structures, over thirty parameters are collected characterizing interconnects, dielectrics, contacts, transistors, and inverters. Each test module contains a specification of its purpose, the layout of the test structure, the test procedures, the data reduction algorithms, and exemplary results obtained from 3-, 2-, or 1.6-micrometer CMOS/bulk processes. The document is intended to establish standard process qualification procedures for Application Specific Integrated Circuits (ASIC's).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, Nan; Tong, Yanhong; Tang, Qingxin, E-mail: tangqx@nenu.edu.cn, E-mail: ycliu@nenu.edu.cn

We showed the advantages of flexible rubrene organic single-crystal microbelts in high-performance devices and circuits towards conformal electronics. The anisotropic transport based on the only one organic microbelt was studied by a “cross-channel” method, and the rubrene microbelt showed the highest mobility up to 26 cm{sup 2}/V s in the length direction. Based on an individual rubrene microbelt, the organic single-crystal circuit with good adherence on a pearl ball and the gain as high as 18 was realized. These results present great potential for applications of organic single-crystal belts in the next-generation conformal electronics.

Increased short circuit current in an azafullerene-based organic solar cell.

PubMed

Cambarau, Werther; Fritze, Urs F; Viterisi, Aurélien; Palomares, Emilio; von Delius, Max

2015-01-21

We report the synthesis of a solution-processable, dodecyloxyphenyl-substituted azafullerene monoadduct (DPC59N) and its application as electron acceptor in bulk heterojunction organic solar cells (BHJ-OSCs). Due to its relatively strong absorption of visible light, DPC59N outperforms PC60BM in respect to short circuit current (JSC) and external quantum efficiency (EQE) in blends with donor P3HT.

Organic Photovoltaic Solar Cells | Photovoltaic Research | NREL

Science.gov Websites

Organic Photovoltaic Solar Cells Organic Photovoltaic Solar Cells The National Center for Photovoltaics (NCPV) at NREL has strong complementary research capabilities in organic photovoltaic (OPV) cells pages: High-Efficiency Crystalline PV Polycrystalline Thin-Film PV Perovskite and Organic PV Advanced PV

Mechanisms of Hierarchical Reinforcement Learning in Corticostriatal Circuits 1: Computational Analysis

PubMed Central

Badre, David

2012-01-01

Growing evidence suggests that the prefrontal cortex (PFC) is organized hierarchically, with more anterior regions having increasingly abstract representations. How does this organization support hierarchical cognitive control and the rapid discovery of abstract action rules? We present computational models at different levels of description. A neural circuit model simulates interacting corticostriatal circuits organized hierarchically. In each circuit, the basal ganglia gate frontal actions, with some striatal units gating the inputs to PFC and others gating the outputs to influence response selection. Learning at all of these levels is accomplished via dopaminergic reward prediction error signals in each corticostriatal circuit. This functionality allows the system to exhibit conditional if–then hypothesis testing and to learn rapidly in environments with hierarchical structure. We also develop a hybrid Bayesian-reinforcement learning mixture of experts (MoE) model, which can estimate the most likely hypothesis state of individual participants based on their observed sequence of choices and rewards. This model yields accurate probabilistic estimates about which hypotheses are attended by manipulating attentional states in the generative neural model and recovering them with the MoE model. This 2-pronged modeling approach leads to multiple quantitative predictions that are tested with functional magnetic resonance imaging in the companion paper. PMID:21693490

A Printed Organic Circuit System for Wearable Amperometric Electrochemical Sensors.

PubMed

Shiwaku, Rei; Matsui, Hiroyuki; Nagamine, Kuniaki; Uematsu, Mayu; Mano, Taisei; Maruyama, Yuki; Nomura, Ayako; Tsuchiya, Kazuhiko; Hayasaka, Kazuma; Takeda, Yasunori; Fukuda, Takashi; Kumaki, Daisuke; Tokito, Shizuo

2018-04-23

Wearable sensor device technologies, which enable continuous monitoring of biological information from the human body, are promising in the fields of sports, healthcare, and medical applications. Further thinness, light weight, flexibility and low-cost are significant requirements for making the devices attachable onto human tissues or clothes like a patch. Here we demonstrate a flexible and printed circuit system consisting of an enzyme-based amperometric sensor, feedback control and amplification circuits based on organic thin-film transistors. The feedback control and amplification circuits based on pseudo-CMOS inverters were successfuly integrated by printing methods on a plastic film. This simple system worked very well like a potentiostat for electrochemical measurements, and enabled the quantitative and real-time measurement of lactate concentration with high sensitivity of 1 V/mM and a short response time of a hundred seconds.

Embedded Touch Sensing Circuit Using Mutual Capacitance for Active-Matrix Organic Light-Emitting Diode Display

NASA Astrophysics Data System (ADS)

Park, Young-Ju; Seok, Su-Jeong; Park, Sang-Ho; Kim, Ohyun

2011-03-01

We propose and simulate an embedded touch sensing circuit for active-matrix organic light-emitting diode (AMOLED) displays. The circuit consists of three thin-film transistors (TFTs), one fixed capacitor, and one variable capacitor. AMOLED displays do not have a variable capacitance characteristic, so we realized a variable capacitor to detect touches in the sensing pixel by exploiting the change in the mutual capacitance between two electrodes that is caused by touch. When a dielectric substance approaches two electrodes, the electric field is shunted so that the mutual capacitance decreases. We use the existing TFT process to form the variable capacitor, so no additional process is needed. We use advanced solid-phase-crystallization TFTs because of their stability and uniformity. The proposed circuit detects multi-touch points by a scanning process.

Network architectures and circuit function: testing alternative hypotheses in multifunctional networks.

PubMed

Leonard, J L

2000-05-01

Understanding how species-typical movement patterns are organized in the nervous system is a central question in neurobiology. The current explanations involve 'alphabet' models in which an individual neuron may participate in the circuit for several behaviors but each behavior is specified by a specific neural circuit. However, not all of the well-studied model systems fit the 'alphabet' model. The 'equation' model provides an alternative possibility, whereby a system of parallel motor neurons, each with a unique (but overlapping) field of innervation, can account for the production of stereotyped behavior patterns by variable circuits. That is, it is possible for such patterns to arise as emergent properties of a generalized neural network in the absence of feedback, a simple version of a 'self-organizing' behavioral system. Comparison of systems of identified neurons suggest that the 'alphabet' model may account for most observations where CPGs act to organize motor patterns. Other well-known model systems, involving architectures corresponding to feed-forward neural networks with a hidden layer, may organize patterned behavior in a manner consistent with the 'equation' model. Such architectures are found in the Mauthner and reticulospinal circuits, 'escape' locomotion in cockroaches, CNS control of Aplysia gill, and may also be important in the coordination of sensory information and motor systems in insect mushroom bodies and the vertebrate hippocampus. The hidden layer of such networks may serve as an 'internal representation' of the behavioral state and/or body position of the animal, allowing the animal to fine-tune oriented, or particularly context-sensitive, movements to the prevalent conditions. Experiments designed to distinguish between the two models in cases where they make mutually exclusive predictions provide an opportunity to elucidate the neural mechanisms by which behavior is organized in vivo and in vitro. Copyright 2000 S. Karger AG, Basel

What is Person-Environment Congruence? Supplementary versus Complementary Models of Fit.

ERIC Educational Resources Information Center

Muchinsky, Paul M.; Monahan, Carlyn J.

1987-01-01

Proposes that there are two types of person-environment congruence: supplementary, the match between an individual and a group of people who comprise an environment, such as a fraternal organization (the rationale behind vocational counseling decisions); and complementary, the match between an individual's talents and the corresponding needs of…

High-Voltage-Input Level Translator Using Standard CMOS

NASA Technical Reports Server (NTRS)

Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

2011-01-01

proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors, which, by virtue of being identical to the input transistors, would reproduce the input differential potential at the output

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Pentacene-based organic thin film transistors, integrated circuits, and active matrix displays on polymeric substrates

NASA Astrophysics Data System (ADS)

Sheraw, Christopher Duncan

2003-10-01

Organic thin film transistors are attractive candidates for a variety of low cost, large area commercial electronics including smart cards, RF identification tags, and flat panel displays. Of particular interest are high performance organic thin film transistors (TFTs) that can be fabricated on flexible polymeric substrates allowing low-cost, lightweight, rugged electronics such as flexible active matrix displays. This thesis reports pentacene organic thin film transistors fabricated on flexible polymeric substrates with record performance, the fastest photolithographically patterned organic TFT integrated circuits on polymeric substrates reported to date, and the fabrication of the organic TFT backplanes used to build the first organic TFT-driven active matrix liquid crystal display (AMLCD), also the first AMLCD on a flexible substrate, ever reported. In addition, the first investigation of functionalized pentacene derivatives used as the active layer in organic thin film transistors is reported. A low temperature (<110°C) process technology was developed allowing the fabrication of high performance organic TFTs, integrated circuits, and large TFT arrays on flexible polymeric substrates. This process includes the development of a novel water-based photolithographic active layer patterning process using polyvinyl alcohol that allows the patterning of organic semiconductor materials for elimination of active layer leakage current without causing device degradation. The small molecule aromatic hydrocarbon pentacene was used as the active layer material to fabricate organic TFTs on the polymeric material polyethylene naphthalate with field-effect mobility as large as 2.1 cm2/V-s and on/off current ratio of 108. These are the best values reported for organic TFTs on polymeric substrates and comparable to organic TFTs on rigid substrates. Analog and digital integrated circuits were also fabricated on polymeric substrates using pentacene TFTs with propagation delay as low as 38 musec and clocked digital circuits that operated at 1.1 kHz. These are the fastest photolithographically patterned organic TFT circuits on polymeric substrates reported to date. Finally, 16 x 16 pentacene TFT pixel arrays were fabricated on polymeric substrates and integrated with polymer dispersed liquid crystal to build an AMLCD. The pixel arrays showed good optical response to changing data signals when standard quarter-VGA display waveforms were applied. This result marks the first organic TFT-driven active matrix liquid crystal display ever reported as well as the first active matrix liquid crystal display on a flexible polymeric substrate. Lastly, functionalized pentacene derivatives were used as the active layer in organic thin film transistor materials. Functional groups were added to the pentacene molecule to influence the molecular ordering so that the amount of pi-orbital overlap would be increased allowing the potential for improved field-effect mobility. The functionalization of these materials also improves solubility allowing for the possibility of solution-processed devices and increased oxidative stability. Organic thin film transistors were fabricated using five different functionalized pentacene active layers. Devices based on the pentacene derivative triisopropylsilyl pentacene were found to have the best performance with field-effect mobility as large as 0.4 cm 2/V-s.

Inverted organic photovoltaic device with a new electron transport layer

NASA Astrophysics Data System (ADS)

Kim, Hyeong Pil; Yusoff, Abd Rashid bin Mohd; Kim, Hyo Min; Lee, Hee Jae; Seo, Gi Jun; Jang, Jin

2014-03-01

We demonstrate that there is a new solution-processed electron transport layer, lithium-doped zinc oxide (LZO), with high-performance inverted organic photovoltaic device. The device exhibits a fill factor of 68.58%, an open circuit voltage of 0.86 V, a short-circuit current density of -9.35 cm/mA2 along with 5.49% power conversion efficiency. In addition, we studied the performance of blend ratio dependence on inverted organic photovoltaics. Our device also demonstrates a long stability shelf life over 4 weeks in air.

Role of Crystallization in the Morphology of Polymer: Non-fullerene Acceptor Bulk Heterojunctions

DOE PAGES

O’Hara, Kathryn A.; Ostrowski, David P.; Koldemir, Unsal; ...

2017-05-22

Many high efficiency organic photovoltaics use fullerene-based acceptors despite their high production cost, weak optical absorption in the visible range, and limited synthetic variability of electronic and optical properties. To circumvent this deficiency, non-fullerene small-molecule acceptors have been developed that have good synthetic flexibility, allowing for precise tuning of optoelectronic properties, leading to enhanced absorption of the solar spectrum and increased open-circuit voltages ( V OC). We examined the detailed morphology of bulk heterojunctions of poly(3-hexylthiophene) and the small-molecule acceptor HPI-BT to reveal structural changes that lead to improvements in the fill factor of solar cells upon thermal annealing. Themore » kinetics of the phase transformation process of HPI-BT during thermal annealing were investigated through in situ grazing incidence wide-angle X-ray scattering studies, atomic force microscopy, and transmission electron microscopy. The HPI-BT acceptor crystallizes during film formation to form micron-sized domains embedded within the film center and a donor rich capping layer at the cathode interface reducing efficient charge extraction. Thermal annealing changes the surface composition and improves charge extraction. In conclusion, this study reveals the need for complementary methods to investigate the morphology of BHJs.« less

Role of Crystallization in the Morphology of Polymer: Non-fullerene Acceptor Bulk Heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

O’Hara, Kathryn A.; Ostrowski, David P.; Koldemir, Unsal

Many high efficiency organic photovoltaics use fullerene-based acceptors despite their high production cost, weak optical absorption in the visible range, and limited synthetic variability of electronic and optical properties. To circumvent this deficiency, non-fullerene small-molecule acceptors have been developed that have good synthetic flexibility, allowing for precise tuning of optoelectronic properties, leading to enhanced absorption of the solar spectrum and increased open-circuit voltages ( V OC). We examined the detailed morphology of bulk heterojunctions of poly(3-hexylthiophene) and the small-molecule acceptor HPI-BT to reveal structural changes that lead to improvements in the fill factor of solar cells upon thermal annealing. Themore » kinetics of the phase transformation process of HPI-BT during thermal annealing were investigated through in situ grazing incidence wide-angle X-ray scattering studies, atomic force microscopy, and transmission electron microscopy. The HPI-BT acceptor crystallizes during film formation to form micron-sized domains embedded within the film center and a donor rich capping layer at the cathode interface reducing efficient charge extraction. Thermal annealing changes the surface composition and improves charge extraction. In conclusion, this study reveals the need for complementary methods to investigate the morphology of BHJs.« less

Ultrasensitive and label-free detection of pathogenic avian influenza DNA by using CMOS impedimetric sensors.

PubMed

Lai, Wei-An; Lin, Chih-Heng; Yang, Yuh-Shyong; Lu, Michael S-C

2012-05-15

This work presents miniaturized CMOS (complementary metal oxide semiconductor) sensors for non-faradic impedimetric detection of AIV (avian influenza virus) oligonucleotides. The signal-to-noise ratio is significantly improved by monolithic sensor integration to reduce the effect of parasitic capacitances. The use of sub-μm interdigitated microelectrodes is also beneficial for promoting the signal coupling efficiency. Capacitance changes associated with surface modification, functionalization, and DNA hybridization were extracted from the measured frequency responses based on an equivalent-circuit model. Hybridization of the AIV H5 capture and target DNA probes produced a capacitance reduction of -13.2 ± 2.1% for target DNA concentrations from 1 fM to 10 fM, while a capacitance increase was observed when H5 target DNA was replaced with non-complementary H7 target DNA. With the demonstrated superior sensing capabilities, this miniaturized CMOS sensing platform shows great potential for label-free point-of-care biosensing applications. Copyright © 2012 Elsevier B.V. All rights reserved.

A survey of the use of complementary and alternative medicine in Illinois hospice and palliative care organizations.

PubMed

Van Hyfte, Gregory J; Kozak, Leila E; Lepore, Michael

2014-08-01

This research assesses complementary and alternative medicine (CAM) use and administration for patients and family caregivers in Illinois hospice and palliative care organizations. An online survey was administered to a sample of 108 contacts of Illinois organizations listed in the National Hospice and Palliative Care Organization website, and 90.3% of the responding organizations offered some type of CAM. The top 5 most frequently offered CAM modalities to patients were pet therapy (64.5%), music therapy (61.3%), massage therapy (54.8%), art therapy (29.0%), and energy therapies (25.8%); these were the same top 5 offered to families but with different frequencies. Findings regarding utilization, administration, financing, and spiritual/cultural competency are discussed with policy recommendations for data collection, administrative improvements, and integration of CAM providers into service delivery. © The Author(s) 2013.

Organization of the Drosophila larval visual circuit

PubMed Central

Gendre, Nanae; Neagu-Maier, G Larisa; Fetter, Richard D; Schneider-Mizell, Casey M; Truman, James W; Zlatic, Marta; Cardona, Albert

2017-01-01

Visual systems transduce, process and transmit light-dependent environmental cues. Computation of visual features depends on photoreceptor neuron types (PR) present, organization of the eye and wiring of the underlying neural circuit. Here, we describe the circuit architecture of the visual system of Drosophila larvae by mapping the synaptic wiring diagram and neurotransmitters. By contacting different targets, the two larval PR-subtypes create two converging pathways potentially underlying the computation of ambient light intensity and temporal light changes already within this first visual processing center. Locally processed visual information then signals via dedicated projection interneurons to higher brain areas including the lateral horn and mushroom body. The stratified structure of the larval optic neuropil (LON) suggests common organizational principles with the adult fly and vertebrate visual systems. The complete synaptic wiring diagram of the LON paves the way to understanding how circuits with reduced numerical complexity control wide ranges of behaviors.

Carbon Nanotube Driver Circuit for 6 × 6 Organic Light Emitting Diode Display

NASA Astrophysics Data System (ADS)

Zou, Jianping; Zhang, Kang; Li, Jingqi; Zhao, Yongbiao; Wang, Yilei; Pillai, Suresh Kumar Raman; Volkan Demir, Hilmi; Sun, Xiaowei; Chan-Park, Mary B.; Zhang, Qing

2015-06-01

Single-walled carbon nanotube (SWNT) is expected to be a very promising material for flexible and transparent driver circuits for active matrix organic light emitting diode (AM OLED) displays due to its high field-effect mobility, excellent current carrying capacity, optical transparency and mechanical flexibility. Although there have been several publications about SWNT driver circuits, none of them have shown static and dynamic images with the AM OLED displays. Here we report on the first successful chemical vapor deposition (CVD)-grown SWNT network thin film transistor (TFT) driver circuits for static and dynamic AM OLED displays with 6 × 6 pixels. The high device mobility of ~45 cm2V-1s-1 and the high channel current on/off ratio of ~105 of the SWNT-TFTs fully guarantee the control capability to the OLED pixels. Our results suggest that SWNT-TFTs are promising backplane building blocks for future OLED displays.

Carbon Nanotube Driver Circuit for 6 × 6 Organic Light Emitting Diode Display.

PubMed

Zou, Jianping; Zhang, Kang; Li, Jingqi; Zhao, Yongbiao; Wang, Yilei; Pillai, Suresh Kumar Raman; Volkan Demir, Hilmi; Sun, Xiaowei; Chan-Park, Mary B; Zhang, Qing

2015-06-29

Single-walled carbon nanotube (SWNT) is expected to be a very promising material for flexible and transparent driver circuits for active matrix organic light emitting diode (AM OLED) displays due to its high field-effect mobility, excellent current carrying capacity, optical transparency and mechanical flexibility. Although there have been several publications about SWNT driver circuits, none of them have shown static and dynamic images with the AM OLED displays. Here we report on the first successful chemical vapor deposition (CVD)-grown SWNT network thin film transistor (TFT) driver circuits for static and dynamic AM OLED displays with 6 × 6 pixels. The high device mobility of ~45 cm(2)V(-1)s(-1) and the high channel current on/off ratio of ~10(5) of the SWNT-TFTs fully guarantee the control capability to the OLED pixels. Our results suggest that SWNT-TFTs are promising backplane building blocks for future OLED displays.

Canonical Organization of Layer 1 Neuron-Led Cortical Inhibitory and Disinhibitory Interneuronal Circuits

PubMed Central

Lee, Alice J.; Wang, Guangfu; Jiang, Xiaolong; Johnson, Seraphina M.; Hoang, Elizabeth T.; Lanté, Fabien; Stornetta, Ruth L.; Beenhakker, Mark P.; Shen, Ying; Julius Zhu, J.

2015-01-01

Interneurons play a key role in cortical function and dysfunction, yet organization of cortical interneuronal circuitry remains poorly understood. Cortical Layer 1 (L1) contains 2 general GABAergic interneuron groups, namely single bouquet cells (SBCs) and elongated neurogliaform cells (ENGCs). SBCs predominantly make unidirectional inhibitory connections (SBC→) with L2/3 interneurons, whereas ENGCs frequently form reciprocal inhibitory and electric connections (ENGC↔) with L2/3 interneurons. Here, we describe a systematic investigation of the pyramidal neuron targets of L1 neuron-led interneuronal circuits in the rat barrel cortex with simultaneous octuple whole-cell recordings and report a simple organizational scheme of the interneuronal circuits. Both SBCs→ and ENGC ↔ L2/3 interneuronal circuits connect to L2/3 and L5, but not L6, pyramidal neurons. SBC → L2/3 interneuronal circuits primarily inhibit the entire dendritic–somato–axonal axis of a few L2/3 and L5 pyramidal neurons located within the same column. In contrast, ENGC ↔ L2/3 interneuronal circuits generally inhibit the distal apical dendrite of many L2/3 and L5 pyramidal neurons across multiple columns. Finally, L1 interneuron-led circuits target distinct subcellular compartments of L2/3 and L5 pyramidal neurons in a L2/3 interneuron type-dependent manner. These results suggest that L1 neurons form canonical interneuronal circuits to control information processes in both supra- and infragranular cortical layers. PMID:24554728

High resolution digital delay timer

DOEpatents

Martin, Albert D.

1988-01-01

Method and apparatus are provided for generating an output pulse following a trigger pulse at a time delay interval preset with a resolution which is high relative to a low resolution available from supplied clock pulses. A first lumped constant delay (20) provides a first output signal (24) at predetermined interpolation intervals corresponding to the desired high resolution time interval. Latching circuits (26, 28) latch the high resolution data (24) to form a first synchronizing data set (60). A selected time interval has been preset to internal counters (142, 146, 154) and corrected for circuit propagation delay times having the same order of magnitude as the desired high resolution. Internal system clock pulses (32, 34) count down the counters to generate an internal pulse delayed by an interval which is functionally related to the preset time interval. A second LCD (184) corrects the internal signal with the high resolution time delay. A second internal pulse is then applied to a third LCD (74) to generate a second set of synchronizing data (76) which is complementary with the first set of synchronizing data (60) for presentation to logic circuits (64). The logic circuits (64) further delay the internal output signal (72) to obtain a proper phase relationship of an output signal (80) with the internal pulses (32, 34). The final delayed output signal (80) thereafter enables the output pulse generator (82) to produce the desired output pulse (84) at the preset time delay interval following input of the trigger pulse (10, 12).

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

PubMed Central

Kazior, Thomas E.

2014-01-01

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III–V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III–V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications. PMID:24567473

Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems.

PubMed

Kazior, Thomas E

2014-03-28

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.

PubMed

Heo, Jae Sang; Kim, Taehoon; Ban, Seok-Gyu; Kim, Daesik; Lee, Jun Ho; Jur, Jesse S; Kim, Myung-Gil; Kim, Yong-Hoon; Hong, Yongtaek; Park, Sung Kyu

2017-08-01

The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p- and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm 2 V -1 s -1 , respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stacked color image sensor using wavelength-selective organic photoconductive films with zinc-oxide thin film transistors as a signal readout circuit

NASA Astrophysics Data System (ADS)

Seo, Hokuto; Aihara, Satoshi; Namba, Masakazu; Watabe, Toshihisa; Ohtake, Hiroshi; Kubota, Misao; Egami, Norifumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Nitta, Hiroshi; Hirao, Takashi

2010-01-01

Our group has been developing a new type of image sensor overlaid with three organic photoconductive films, which are individually sensitive to only one of the primary color components (blue (B), green (G), or red (R) light), with the aim of developing a compact, high resolution color camera without any color separation optical systems. In this paper, we firstly revealed the unique characteristics of organic photoconductive films. Only choosing organic materials can tune the photoconductive properties of the film, especially excellent wavelength selectivities which are good enough to divide the incident light into three primary colors. Color separation with vertically stacked organic films was also shown. In addition, the high-resolution of organic photoconductive films sufficient for high-definition television (HDTV) was confirmed in a shooting experiment using a camera tube. Secondly, as a step toward our goal, we fabricated a stacked organic image sensor with G- and R-sensitive organic photoconductive films, each of which had a zinc oxide (ZnO) thin film transistor (TFT) readout circuit, and demonstrated image pickup at a TV frame rate. A color image with a resolution corresponding to the pixel number of the ZnO TFT readout circuit was obtained from the stacked image sensor. These results show the potential for the development of high-resolution prism-less color cameras with stacked organic photoconductive films.

n-Channel semiconductor materials design for organic complementary circuits.

PubMed

Usta, Hakan; Facchetti, Antonio; Marks, Tobin J

2011-07-19

Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features are essential for a variety of next-generation electronic products, including low-power flexible displays, inexpensive radio frequency identification (RFID) tags, and printable sensors, among many other applications. Accordingly, the preparation of new materials based on π-conjugated organic molecules or polymers has been a central scientific and technological research focus over the past decade. Currently, p-channel (hole-transporting) materials are the leading class of organic semiconductors. In contrast, high-performance n-channel (electron-transporting) semiconductors are relatively rare, but they are of great significance for the development of plastic electronic devices such as organic field-effect transistors (OFETs). In this Account, we highlight the advances our team has made toward realizing moderately and highly electron-deficient n-channel oligomers and polymers based on oligothiophene, arylenediimide, and (bis)indenofluorene skeletons. We have synthesized and characterized a "library" of structurally related semiconductors, and we have investigated detailed structure-property relationships through optical, electrochemical, thermal, microstructural (both single-crystal and thin-film), and electrical measurements. Our results reveal highly informative correlations between structural parameters at various length scales and charge transport properties. We first discuss oligothiophenes functionalized with perfluoroalkyl and perfluoroarene substituents, which represent the initial examples of high-performance n-channel semiconductors developed in this project. The OFET characteristics of these compounds are presented with an emphasis on structure-property relationships. We then examine the synthesis and properties of carbonyl-functionalized oligomers, which constitute second-generation n-channel oligothiophenes, in both vacuum- and solution-processed FETs. These materials have high carrier mobilities and good air stability. In parallel, exceptionally electron-deficient cyano-functionalized arylenediimide derivatives are discussed as early examples of thermodynamically air-stable, high-performance n-channel semiconductors; they exhibit record electron mobilities of up to 0.64 cm(2)/V·s. Furthermore, we provide an overview of highly soluble ladder-type macromolecular semiconductors as OFET components, which combine ambient stability with solution processibility. A high electron mobility of 0.16 cm(2)/V·s is obtained under ambient conditions for solution-processed films. Finally, examples of polymeric n-channel semiconductors with electron mobilities as high as 0.85 cm(2)/V·s are discussed; these constitute an important advance toward fully printed polymeric electronic circuitry. Density functional theory (DFT) computations reveal important trends in molecular physicochemical and semiconducting properties, which, when combined with experimental data, shed new light on molecular charge transport characteristics. Our data provide the basis for a fundamental understanding of charge transport in high-performance n-channel organic semiconductors. Moreover, our results provide a road map for developing functional, complementary organic circuitry, which requires combining p- and n-channel transistors.

A new AC driving circuit for a top emission AMOLED

NASA Astrophysics Data System (ADS)

Yongwen, Zhang; Wenbin, Chen; Haohan, Liu

2013-05-01

A new voltage programmed pixel circuit with top emission design for active-matrix organic light-emitting diode (AMOLED) displays is presented and verified by HSPICE simulations. The proposed pixel circuit consists of five poly-Si TFTs, and can effectively compensate for the threshold voltage variation of the driving TFT. Meanwhile, the proposed pixel circuit offers an AC driving mode for the OLED by the two adjacent pulse voltage sources, which can suppress the degradation of the OLED. Moreover, a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period.

High Speed Solid State Circuit Breaker

NASA Technical Reports Server (NTRS)

Podlesak, Thomas F.

1993-01-01

The U.S. Army Research Laboratory, Fort Monmouth, NJ, has developed and is installing two 3.3 MW high speed solid state circuit breakers at the Army's Pulse Power Center. These circuit breakers will interrupt 4160V three phase power mains in no more than 300 microseconds, two orders of magnitude faster than conventional mechanical contact type circuit breakers. These circuit breakers utilize Gate Turnoff Thyristors (GTO's) and are currently utility type devices using air cooling in an air conditioned enclosure. Future refinements include liquid cooling, either water or two phase organic coolant, and more advanced semiconductors. Each of these refinements promises a more compact, more reliable unit.

Reward from bugs to bipeds: a comparative approach to understanding how reward circuits function

PubMed Central

Scaplen, Kristin M.; Kaun, Karla R.

2016-01-01

Abstract In a complex environment, animals learn from their responses to stimuli and events. Appropriate response to reward and punishment can promote survival, reproduction and increase evolutionary fitness. Interestingly, the neural processes underlying these responses are remarkably similar across phyla. In all species, dopamine is central to encoding reward and directing motivated behaviors, however, a comprehensive understanding of how circuits encode reward and direct motivated behaviors is still lacking. In part, this is a result of the sheer diversity of neurons, the heterogeneity of their responses and the complexity of neural circuits within which they are found. We argue that general features of reward circuitry are common across model organisms, and thus principles learned from invertebrate model organisms can inform research across species. In particular, we discuss circuit motifs that appear to be functionally equivalent from flies to primates. We argue that a comparative approach to studying and understanding reward circuit function provides a more comprehensive understanding of reward circuitry, and informs disorders that affect the brain’s reward circuitry. PMID:27328845

Use of laser drilling in the manufacture of organic inverter circuits.

PubMed

Iba, Shingo; Kato, Yusaku; Sekitani, Tsuyoshi; Kawaguchi, Hiroshi; Sakurai, Takayasu; Someya, Takao

2006-01-01

Inverter circuits have been made by connecting two high-quality pentacene field-effect transistors. A uniform and pinhole-free 900 nm thick polyimide gate-insulating layer was formed on a flexible polyimide film with gold gate electrodes and partially removed by using a CO2 laser drilling machine to make via holes and contact holes. Subsequent evaporation of the gold layer results in good electrical connection with a gold gate layer underneath the gate-insulating layer. By optimization of the settings of the CO2 laser drilling machine, contact resistance can be reduced to as low as 3 ohms for 180 microm square electrodes. No degradation of the transport properties of the organic transistors was observed after the laser-drilling process. This study demonstrates the feasibility of using the laser drilling process for implementation of organic transistors in integrated circuits on flexible polymer films.

Design and implementation of GaAs HBT circuits with ACME

NASA Technical Reports Server (NTRS)

Hutchings, Brad L.; Carter, Tony M.

1993-01-01

GaAs HBT circuits offer high performance (5-20 GHz) and radiation hardness (500 Mrad) that is attractive for space applications. ACME is a CAD tool specifically developed for HBT circuits. ACME implements a novel physical schematic-capture design technique where designers simultaneously view the structure and physical organization of a circuit. ACME's design interface is similar to schematic capture; however, unlike conventional schematic capture, designers can directly control the physical placement of both function and interconnect at the schematic level. In addition, ACME provides design-time parasitic extraction, complex wire models, and extensions to Multi-Chip Modules (MCM's). A GaAs HBT gate-array and semi-custom circuits have been developed with ACME; several circuits have been fabricated and found to be fully functional .

Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.

PubMed

Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo

2017-02-01

Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication and Characterization of Organic Photovoltaic Cell using Keithley 2400 SMU for efficient solar cell

NASA Astrophysics Data System (ADS)

Hafeez, Hafeez Y.; Iro, Zaharaddeen S.; Adam, Bala I.; Mohammed, J.

2018-04-01

An organic solar cell device or organic photovoltaic cell (OPV) is a class of solar cell that uses conductive organic polymers or small organic molecules for light absorption and charge transport. In this study, we fabricate and characterize an organic photovoltaic cell device and estimated important parameters of the device such as Open Circuit Voltage Voc of 0.28V, Short-Circuit Current Isc of 4.0 × 10-5 A, Maximum Power Pmax of 2.4 × 10-6 W, Fill Factor of 0.214 and the energy conversion efficiency of η=0.00239% were tested using Keithley 2400,source meter under A.M 1.5 (1000/m2) illumination from a Newport Class A solar simulator. Also the I-V characteristics for OPV were drawn.

A wireless wearable surface functional electrical stimulator

NASA Astrophysics Data System (ADS)

Wang, Hai-Peng; Guo, Ai-Wen; Zhou, Yu-Xuan; Xia, Yang; Huang, Jia; Xu, Chong-Yao; Huang, Zong-Hao; Lü, Xiao-Ying; Wang, Zhi-Gong

2017-09-01

In this paper, a wireless wearable functional electrical stimulator controlled by Android phone with real-time-varying stimulation parameters for multichannel surface functional electrical stimulation application has been developed. It can help post-stroke patients using more conveniently. This study focuses on the prototype design, including the specific wristband concept, circuits and stimulation pulse-generation algorithm. A novel stimulator circuit with a driving stage using a complementary current source technique is proposed to achieve a high-voltage compliance, a large output impedance and an accurate linear voltage-to-current conversion. The size of the prototype has been significantly decreased to 17 × 7.5 × 1 cm3. The performance of the prototype has been tested with a loaded resistor and wrist extension/flexion movement of three hemiplegic patients. According to the experiments, the stimulator can generate four-channel charge-balanced biphasic stimulation with a voltage amplitude up to 60 V, and the pulse frequency and width can be adjusted in real time with a range of 100-600 μs and 20-80 Hz, respectively.

A compact rail-to-rail CMOS buffer amplifier with very low quiescent current

NASA Astrophysics Data System (ADS)

Arslan, Emre; Yıldız, Merih; Minaei, Shahram

2015-06-01

In this work, a very compact, rail-to-rail, high-speed buffer amplifier for liquid crystal display (LCD) applications is proposed. Compared to other buffer amplifiers, the proposed circuit has a very simple architecture, occupies a small number of transistors and also has a large driving capacity with very low quiescent current. It is composed of two complementary differential input stages to provide rail-to-rail driving capacity. The push-pull transistors are directly connected to the differential input stage, and the output is taken from an inverter. The proposed buffer circuit is laid out using Mentor Graphics IC Station layout editor using AMS 0.35 μm process parameters. It is shown by post-layout simulations that the proposed buffer can drive a 1 nF capacitive load within a small settling time under a full voltage swing, while drawing only 1.6 μA quiescent current from a 3.3 V power supply.

Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology

NASA Astrophysics Data System (ADS)

Ildefonso, Adrian; Lourenco, Nelson E.; Fleetwood, Zachary E.; Wachter, Mason T.; Tzintzarov, George N.; Cardoso, Adilson S.; Roche, Nicolas J.-H.; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Warner, Jeffrey H.; Paki, Pauline; Kaynak, Mehmet; Tillack, Bernd; Cressler, John D.

2017-01-01

The single-event transient (SET) response of the pre-amplification stage of two latched comparators designed using either npn or pnp silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is investigated via two-photon absorption (TPA) carrier injection and mixed-mode TCAD simulations. Experimental data and TCAD simulations showed an improved SET response for the pnp comparator circuit. 2-D raster scans revealed that the devices in the pnp circuit exhibit a reduction in sensitive area of up to 80% compared to their npn counterparts. In addition, by sweeping the input voltage, the sensitive operating region with respect to SETs was determined. By establishing a figure-of-merit, relating the transient peaks and input voltage polarities, the pnp device was determined to have a 21.4% improved response with respect to input voltage. This study has shown that using pnp devices is an effective way to mitigate SETs, and could enable further radiation-hardening-by-design techniques.

A 0.1-1.4 GHz inductorless low-noise amplifier with 13 dBm IIP3 and 24 dBm IIP2 in 180 nm CMOS

NASA Astrophysics Data System (ADS)

Guo, Benqing; Chen, Jun; Chen, Hongpeng; Wang, Xuebing

2018-01-01

An inductorless noise-canceling CMOS low-noise amplifier (LNA) with wideband linearization technique is proposed. The complementary configuration by stacked NMOS/PMOS is employed to compensate second-order nonlinearity of the circuit. The third-order distortion of the auxiliary stage is also mitigated by that of the weak inversion transistors in the main path. The bias and scaling size combined by digital control words are further tuned to obtain enhanced linearity over the desired band. Implemented in a 0.18 μm CMOS process, simulated results show that the proposed LNA provides a voltage gain of 16.1 dB and a NF of 2.8-3.4 dB from 0.1 GHz to 1.4 GHz. The IIP3 and IIP2 of 13-18.9 and 24-40 dBm are obtained, respectively. The circuit core consumes 19 mW from a 1.8 V supply.

Design principles of electrical synaptic plasticity.

PubMed

O'Brien, John

2017-09-08

Essentially all animals with nervous systems utilize electrical synapses as a core element of communication. Electrical synapses, formed by gap junctions between neurons, provide rapid, bidirectional communication that accomplishes tasks distinct from and complementary to chemical synapses. These include coordination of neuron activity, suppression of voltage noise, establishment of electrical pathways that define circuits, and modulation of high order network behavior. In keeping with the omnipresent demand to alter neural network function in order to respond to environmental cues and perform tasks, electrical synapses exhibit extensive plasticity. In some networks, this plasticity can have dramatic effects that completely remodel circuits or remove the influence of certain cell types from networks. Electrical synaptic plasticity occurs on three distinct time scales, ranging from milliseconds to days, with different mechanisms accounting for each. This essay highlights principles that dictate the properties of electrical coupling within networks and the plasticity of the electrical synapses, drawing examples extensively from retinal networks. Copyright © 2017 The Author. Published by Elsevier B.V. All rights reserved.

Receiving sensitivity and transmitting voltage response of a fluid loaded spherical piezoelectric transducer with an elastic coating.

PubMed

George, Jineesh; Ebenezer, D D; Bhattacharyya, S K

2010-10-01

A method is presented to determine the response of a spherical acoustic transducer that consists of a fluid-filled piezoelectric sphere with an elastic coating embedded in infinite fluid to electrical and plane-wave acoustic excitations. The exact spherically symmetric, linear, differential, governing equations are used for the interior and exterior fluids, and elastic and piezoelectric materials. Under acoustic excitation and open circuit boundary condition, the equation governing the piezoelectric sphere is homogeneous and the solution is expressed in terms of Bessel functions. Under electrical excitation, the equation governing the piezoelectric sphere is inhomogeneous and the complementary solution is expressed in terms of Bessel functions and the particular integral is expressed in terms of a power series. Numerical results are presented to illustrate the effect of dimensions of the piezoelectric sphere, fluid loading, elastic coating and internal material losses on the open-circuit receiving sensitivity and transmitting voltage response of the transducer.

An omnipotent Li-ion battery charger with multimode control and polarity reversible techniques

NASA Astrophysics Data System (ADS)

Chen, Jiann-Jong; Ku, Yi-Tsen; Yang, Hong-Yi; Hwang, Yuh-Shyan; Yu, Cheng-Chieh

2016-07-01

The omnipotent Li-ion battery charger with multimode control and polarity reversible techniques is presented in this article. The proposed chip is fabricated with TSMC 0.35μm 2P4M complementary metal-oxide- semiconductor processes, and the chip area including pads is 1.5 × 1.5 mm2. The structure of the omnipotent charger combines three charging modes and polarity reversible techniques, which adapt to any Li-ion batteries. The three reversible Li-ion battery charging modes, including trickle-current charging, large-current charging and constant-voltage charging, can charge in matching polarities or opposite polarities. The proposed circuit has a maximum charging current of 300 mA and the input voltage of the proposed circuit is set to 4.5 V. The maximum efficiency of the proposed charger is about 91% and its average efficiency is 74.8%. The omnipotent charger can precisely provide the charging current to the battery.

Magnetic-free non-reciprocity based on staggered commutation

PubMed Central

Reiskarimian, Negar; Krishnaswamy, Harish

2016-01-01

Lorentz reciprocity is a fundamental characteristic of the vast majority of electronic and photonic structures. However, non-reciprocal components such as isolators, circulators and gyrators enable new applications ranging from radio frequencies to optical frequencies, including full-duplex wireless communication and on-chip all-optical information processing. Such components today dominantly rely on the phenomenon of Faraday rotation in magneto-optic materials. However, they are typically bulky, expensive and not suitable for insertion in a conventional integrated circuit. Here we demonstrate magnetic-free linear passive non-reciprocity based on the concept of staggered commutation. Commutation is a form of parametric modulation with very high modulation ratio. We observe that staggered commutation enables time-reversal symmetry breaking within very small dimensions (λ/1,250 × λ/1,250 in our device), resulting in a miniature radio-frequency circulator that exhibits reduced implementation complexity, very low loss, strong non-reciprocity, significantly enhanced linearity and real-time reconfigurability, and is integrated in a conventional complementary metal–oxide–semiconductor integrated circuit for the first time. PMID:27079524

Biocompatible and totally disintegrable semiconducting polymer for ultrathin and ultralightweight transient electronics

PubMed Central

Lei, Ting; Guan, Ming; Liu, Jia; Lin, Hung-Cheng; Pfattner, Raphael; McGuire, Allister F.; Huang, Tsung-Ching; Shao, Leilai; Cheng, Kwang-Ting; Tok, Jeffrey B.-H.; Bao, Zhenan

2017-01-01

Increasing performance demands and shorter use lifetimes of consumer electronics have resulted in the rapid growth of electronic waste. Currently, consumer electronics are typically made with nondecomposable, nonbiocompatible, and sometimes even toxic materials, leading to serious ecological challenges worldwide. Here, we report an example of totally disintegrable and biocompatible semiconducting polymers for thin-film transistors. The polymer consists of reversible imine bonds and building blocks that can be easily decomposed under mild acidic conditions. In addition, an ultrathin (800-nm) biodegradable cellulose substrate with high chemical and thermal stability is developed. Coupled with iron electrodes, we have successfully fabricated fully disintegrable and biocompatible polymer transistors. Furthermore, disintegrable and biocompatible pseudo-complementary metal–oxide–semiconductor (CMOS) flexible circuits are demonstrated. These flexible circuits are ultrathin (<1 μm) and ultralightweight (∼2 g/m2) with low operating voltage (4 V), yielding potential applications of these disintegrable semiconducting polymers in low-cost, biocompatible, and ultralightweight transient electronics. PMID:28461459

Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

DOE PAGES

Xiao, Zhigang; Kisslinger, Kim

2015-06-17

Thin films of hafnium dioxide (HfO 2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO 2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO 2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO 2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ringmore » oscillator to test the quality of the HfO 2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO 2 thin film functioned very well as the gate oxide.« less

Biocompatible and totally disintegrable semiconducting polymer for ultrathin and ultralightweight transient electronics.

PubMed

Lei, Ting; Guan, Ming; Liu, Jia; Lin, Hung-Cheng; Pfattner, Raphael; Shaw, Leo; McGuire, Allister F; Huang, Tsung-Ching; Shao, Leilai; Cheng, Kwang-Ting; Tok, Jeffrey B-H; Bao, Zhenan

2017-05-16

Increasing performance demands and shorter use lifetimes of consumer electronics have resulted in the rapid growth of electronic waste. Currently, consumer electronics are typically made with nondecomposable, nonbiocompatible, and sometimes even toxic materials, leading to serious ecological challenges worldwide. Here, we report an example of totally disintegrable and biocompatible semiconducting polymers for thin-film transistors. The polymer consists of reversible imine bonds and building blocks that can be easily decomposed under mild acidic conditions. In addition, an ultrathin (800-nm) biodegradable cellulose substrate with high chemical and thermal stability is developed. Coupled with iron electrodes, we have successfully fabricated fully disintegrable and biocompatible polymer transistors. Furthermore, disintegrable and biocompatible pseudo-complementary metal-oxide-semiconductor (CMOS) flexible circuits are demonstrated. These flexible circuits are ultrathin (<1 μm) and ultralightweight (∼2 g/m 2 ) with low operating voltage (4 V), yielding potential applications of these disintegrable semiconducting polymers in low-cost, biocompatible, and ultralightweight transient electronics.

Genetic circuit design automation.

PubMed

Nielsen, Alec A K; Der, Bryan S; Shin, Jonghyeon; Vaidyanathan, Prashant; Paralanov, Vanya; Strychalski, Elizabeth A; Ross, David; Densmore, Douglas; Voigt, Christopher A

2016-04-01

Computation can be performed in living cells by DNA-encoded circuits that process sensory information and control biological functions. Their construction is time-intensive, requiring manual part assembly and balancing of regulator expression. We describe a design environment, Cello, in which a user writes Verilog code that is automatically transformed into a DNA sequence. Algorithms build a circuit diagram, assign and connect gates, and simulate performance. Reliable circuit design requires the insulation of gates from genetic context, so that they function identically when used in different circuits. We used Cello to design 60 circuits forEscherichia coli(880,000 base pairs of DNA), for which each DNA sequence was built as predicted by the software with no additional tuning. Of these, 45 circuits performed correctly in every output state (up to 10 regulators and 55 parts), and across all circuits 92% of the output states functioned as predicted. Design automation simplifies the incorporation of genetic circuits into biotechnology projects that require decision-making, control, sensing, or spatial organization. Copyright © 2016, American Association for the Advancement of Science.

Complementary Enzymes Activities in Organic Phosphorus Mineralization and Cycling by Phosphohydrolases in Soils

USDA-ARS?s Scientific Manuscript database

Inorganic and organic phosphates react strongly with soil constituents, resulting in relatively low concentrations of soluble phosphates in the soil solution. Multiple competing reactions control the solution-phase concentration and the cycling of phosphorus-containing organic substrates and the re...

Impact of tubing length on hemodynamics in a simulated neonatal extracorporeal life support circuit.

PubMed

Qiu, Feng; Uluer, Mehmet C; Kunselman, Allen; Clark, J Brian; Myers, John L; Undar, Akif

2010-11-01

During extracorporeal life support (ECLS), a large portion of the hemodynamic energy is lost to various components of the circuit. Minimization of this loss in the circuit leads to better vital organ perfusion and decreases the risk of systemic inflammation. In this study, we evaluated the hemodynamic properties of differing lengths of tubing in a simulated neonatal ECLS circuit. The neonatal ECLS circuit used in this study included a Capiox Baby RX05 oxygenator (Terumo Corporation, Tokyo, Japan), a Rotaflow centrifugal pump (MAQUET Cardiopulmonary AG, Hirrlingen, Germany), and a heater and cooler unit. An 8Fr Biomedicus arterial and a 10Fr Biomedicus venous cannula were connected to the pseudopatient. One-fourth inch tubing was used for both the arterial and the venous line. A Hoffman clamp was located upstream from the pseudopatient to maintain a certain patient pressure. Three pressure transducers were placed at different sites: postoxygenator, prearterial cannula, and postarterial cannula. The system was primed with Lactated Ringer's solution; human blood was then added to maintain a hematocrit of 40%. The volume of the pseudopatient was 500mL. We hemodynamically evaluated three circuits with different lengths of tubing: 6, 4, and 2 feet (182.88, 121.92, and 60.96 cm, respectively) for both arterial and venous lines; the priming volumes including all of the components of the circuits were 195, 155, and 115mL, respectively. In each circuit, we measured the pressure drops of the arterial tubing and the arterial cannula, as well as the flow rates at different rpm (1750-3000, 250 intervals) under three patient pressures (40, 60, and 80mm Hg). All the experiments were conducted at 37°C. The pressure drop across the arterial cannula is much larger than that of arterial tubing in all set-ups, especially under high flow rates. Upon cutting the tubing from 6 to 2 feet, the pressure drop of the arterial tubing decreased by half, while the pressure drop of the arterial cannula increased due to the slightly higher flow rates. These results suggest that compared to the arterial tubing, the arterial cannula has a larger impact on the hemodynamics of the circuit. There is a little influence of tubing length on the circuit flow rate. © 2010, Copyright the Authors. Artificial Organs © 2010, International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

Wireless multichannel biopotential recording using an integrated FM telemetry circuit.

PubMed

Mohseni, Pedram; Najafi, Khalil; Eliades, Steven J; Wang, Xiaoqin

2005-09-01

This paper presents a four-channel telemetric microsystem featuring on-chip alternating current amplification, direct current baseline stabilization, clock generation, time-division multiplexing, and wireless frequency-modulation transmission of microvolt- and millivolt-range input biopotentials in the very high frequency band of 94-98 MHz over a distance of approximately 0.5 m. It consists of a 4.84-mm2 integrated circuit, fabricated using a 1.5-microm double-poly double-metal n-well standard complementary metal-oxide semiconductor process, interfaced with only three off-chip components on a custom-designed printed-circuit board that measures 1.7 x 1.2 x 0.16 cm3, and weighs 1.1 g including two miniature 1.5-V batteries. We characterize the microsystem performance, operating in a truly wireless fashion in single-channel and multichannel operation modes, via extensive benchtop and in vitro tests in saline utilizing two different micromachined neural recording microelectrodes, while dissipating approximately 2.2 mW from a 3-V power supply. Moreover, we demonstrate successful wireless in vivo recording of spontaneous neural activity at 96.2 MHz from the auditory cortex of an awake marmoset monkey at several transmission distances ranging from 10 to 50 cm with signal-to-noise ratios in the range of 8.4-9.5 dB.

ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

NASA Technical Reports Server (NTRS)

Vasile, Stefan; Lipson, Jerold

2012-01-01

The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

Wireless Low-Power Integrated Basal-Body-Temperature Detection Systems Using Teeth Antennas in the MedRadio Band.

PubMed

Yang, Chin-Lung; Zheng, Gou-Tsun

2015-11-20

This study proposes using wireless low power thermal sensors for basal-body-temperature detection using frequency modulated telemetry devices. A long-term monitoring sensor requires low-power circuits including a sampling circuit and oscillator. Moreover, temperature compensated technologies are necessary because the modulated frequency might have additional frequency deviations caused by the varying temperature. The temperature compensated oscillator is composed of a ring oscillator and a controlled-steering current source with temperature compensation, so the output frequency of the oscillator does not drift with temperature variations. The chip is fabricated in a standard Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-μm complementary metal oxide semiconductor (CMOS) process, and the chip area is 0.9 mm². The power consumption of the sampling amplifier is 128 µW. The power consumption of the voltage controlled oscillator (VCO) core is less than 40 µW, and the output is -3.04 dBm with a buffer stage. The output voltage of the bandgap reference circuit is 1 V. For temperature measurements, the maximum error is 0.18 °C with a standard deviation of ±0.061 °C, which is superior to the required specification of 0.1 °C.

Noise-shaping gradient descent-based online adaptation algorithms for digital calibration of analog circuits.

PubMed

Chakrabartty, Shantanu; Shaga, Ravi K; Aono, Kenji

2013-04-01

Analog circuits that are calibrated using digital-to-analog converters (DACs) use a digital signal processor-based algorithm for real-time adaptation and programming of system parameters. In this paper, we first show that this conventional framework for adaptation yields suboptimal calibration properties because of artifacts introduced by quantization noise. We then propose a novel online stochastic optimization algorithm called noise-shaping or ΣΔ gradient descent, which can shape the quantization noise out of the frequency regions spanning the parameter adaptation trajectories. As a result, the proposed algorithms demonstrate superior parameter search properties compared to floating-point gradient methods and better convergence properties than conventional quantized gradient-methods. In the second part of this paper, we apply the ΣΔ gradient descent algorithm to two examples of real-time digital calibration: 1) balancing and tracking of bias currents, and 2) frequency calibration of a band-pass Gm-C biquad filter biased in weak inversion. For each of these examples, the circuits have been prototyped in a 0.5-μm complementary metal-oxide-semiconductor process, and we demonstrate that the proposed algorithm is able to find the optimal solution even in the presence of spurious local minima, which are introduced by the nonlinear and non-monotonic response of calibration DACs.

On-chip single photon filtering and multiplexing in hybrid quantum photonic circuits.

PubMed

Elshaari, Ali W; Zadeh, Iman Esmaeil; Fognini, Andreas; Reimer, Michael E; Dalacu, Dan; Poole, Philip J; Zwiller, Val; Jöns, Klaus D

2017-08-30

Quantum light plays a pivotal role in modern science and future photonic applications. Since the advent of integrated quantum nanophotonics different material platforms based on III-V nanostructures-, colour centers-, and nonlinear waveguides as on-chip light sources have been investigated. Each platform has unique advantages and limitations; however, all implementations face major challenges with filtering of individual quantum states, scalable integration, deterministic multiplexing of selected quantum emitters, and on-chip excitation suppression. Here we overcome all of these challenges with a hybrid and scalable approach, where single III-V quantum emitters are positioned and deterministically integrated in a complementary metal-oxide-semiconductor-compatible photonic circuit. We demonstrate reconfigurable on-chip single-photon filtering and wavelength division multiplexing with a foot print one million times smaller than similar table-top approaches, while offering excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm. Our work marks an important step to harvest quantum optical technologies' full potential.Combining different integration platforms on the same chip is currently one of the main challenges for quantum technologies. Here, Elshaari et al. show III-V Quantum Dots embedded in nanowires operating in a CMOS compatible circuit, with controlled on-chip filtering and tunable routing.

A Distance Detector with a Strip Magnetic MOSFET and Readout Circuit.

PubMed

Sung, Guo-Ming; Lin, Wen-Sheng; Wang, Hsing-Kuang

2017-01-10

This paper presents a distance detector composed of two separated metal-oxide semiconductor field-effect transistors (MOSFETs), a differential polysilicon cross-shaped Hall plate (CSHP), and a readout circuit. The distance detector was fabricated using 0.18 μm 1P6M Complementary Metal-Oxide Semiconductor (CMOS) technology to sense the magnetic induction perpendicular to the chip surface. The differential polysilicon CSHP enabled the magnetic device to not only increase the magnetosensitivity but also eliminate the offset voltage generated because of device mismatch and Lorentz force. Two MOSFETs generated two drain currents with a quadratic function of the differential Hall voltages at CSHP. A readout circuit-composed of a current-to-voltage converter, a low-pass filter, and a difference amplifier-was designed to amplify the current difference between two drains of MOSFETs. Measurements revealed that the electrostatic discharge (ESD) could be eliminated from the distance sensor by grounding it to earth; however, the sensor could be desensitized by ESD in the absence of grounding. The magnetic influence can be ignored if the magnetic body (human) stays far from the magnetic sensor, and the measuring system is grounded to earth by using the ESD wrist strap (Strap E-GND). Both 'no grounding' and 'grounding to power supply' conditions were unsuitable for measuring the induced Hall voltage.

An area and power-efficient analog li-ion battery charger circuit.

PubMed

Do Valle, Bruno; Wentz, Christian T; Sarpeshkar, Rahul

2011-04-01

The demand for greater battery life in low-power consumer electronics and implantable medical devices presents a need for improved energy efficiency in the management of small rechargeable cells. This paper describes an ultra-compact analog lithium-ion (Li-ion) battery charger with high energy efficiency. The charger presented here utilizes the tanh basis function of a subthreshold operational transconductance amplifier to smoothly transition between constant-current and constant-voltage charging regimes without the need for additional area- and power-consuming control circuitry. Current-domain circuitry for end-of-charge detection negates the need for precision-sense resistors in either the charging path or control loop. We show theoretically and experimentally that the low-frequency pole-zero nature of most battery impedances leads to inherent stability of the analog control loop. The circuit was fabricated in an AMI 0.5-μm complementary metal-oxide semiconductor process, and achieves 89.7% average power efficiency and an end voltage accuracy of 99.9% relative to the desired target 4.2 V, while consuming 0.16 mm(2) of chip area. To date and to the best of our knowledge, this design represents the most area-efficient and most energy-efficient battery charger circuit reported in the literature.

Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations

PubMed Central

Kim, Dae-Hyeong; Song, Jizhou; Choi, Won Mook; Kim, Hoon-Sik; Kim, Rak-Hwan; Liu, Zhuangjian; Huang, Yonggang Y.; Hwang, Keh-Chih; Zhang, Yong-wei; Rogers, John A.

2008-01-01

Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enable new biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90° in ≈1 cm) and linear stretching to “rubber-band” levels of strain (e.g., up to ≈140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics. PMID:19015528

Lower-Dark-Current, Higher-Blue-Response CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Cunningham, Thomas; Hancock, Bruce

2008-01-01

Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated-circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal-handling capacities, relative to those of prior CMOS imagers. The main conclusion that can be drawn from a study of the causes of dark currents in prior CMOS imagers is that dark currents could be reduced by relocating p/n junctions away from Si/SiO2 interfaces. In addition to reflecting this conclusion, the improved designs include several other features to counteract dark-current mechanisms and enhance performance.

Process characteristics and design methods for a 300 deg quad OP amp

NASA Technical Reports Server (NTRS)

Beasom, J. D.; Patterson, R. B., III

1981-01-01

The results of process characterization, circuit design, and reliability studies for the development of a quad OP amplifier intended for use up to 300 C are presented. A dielectrically isolated complementary vertical bipolar process was chosen to fabricate the amplifier in order to eliminate isolation leakage and the possibility of latch up. Characterization of NPN and PNP junctions showed them to be suitable for use up to 300 C. Interconnect reliability was predicted to be greater than four years mean time between failure. Parasitic MOS formation was eliminated by isolation of each device.

Demonstration of High-Mobility Electron and Hole Transport in a Single InGaSb Well for Complementary Circuits

DTIC Science & Technology

2009-01-01

Abrokwah, P.N. Parakh, T.D. Basso, S.M. Gold, S. Stetson, C.R. Gauthier, D. Foster, B. Crawforth, T. McQuire, K . Sakallah, R.J. Lomax, T.N. Mudge...IEEE Trans. VLSI Syst. 6 (1998) 47. [3] A. Leuther, A. Thiede, K . Kohler, T. Jakobus, G. Weimann, Compd. Semicond. 1999 (2000) 313. [4] J.H. Tsai, C.M...Longenbach, R. Beresford, W.I. Wang, IEEE Trans. Electron Devices 37 (1990) 2265. [8] K . Yoh, H. Taniguchi, K . Kiyomi, M. Inoue, Jpn. J. Appl. Phys. I 30

Miniature biotelemeter gives multichannel wideband biomedical data

NASA Technical Reports Server (NTRS)

Carraway, J. B.

1972-01-01

A miniature biotelemeter was developed for sensing and transmitting multiple channels of biomedical data over a radio link. The design of this miniature, 10-channel, wideband (5 kHz/channel), pulse amplitude modulation/ frequency modulation biotelemeter takes advantage of modern device technology (e.g., integrated circuit operational amplifiers, complementary symmetry/metal oxide semiconductor logic, and solid state switches) and hybrid packaging techniques. The telemeter is being used to monitor 10 channels of neuron firings from specific regions of the brain in rats implanted with chronic electrodes. Design, fabrication, and testing of an engineering model biotelemeter are described.

Study of proton radiation effects among diamond and rectangular gate MOSFET layouts

NASA Astrophysics Data System (ADS)

Seixas, L. E., Jr.; Finco, S.; Silveira, M. A. G.; Medina, N. H.; Gimenez, S. P.

2017-01-01

This paper describes an experimental comparative study of proton ionizing radiation effects between the metal-oxide-semiconductor (MOS) Field Effect Transistors (MOSFETs) implemented with hexagonal gate shapes (diamond) and their respective counterparts designed with the classical rectangular ones, regarding the same gate areas, channel widths and geometrical ratios (W/L). The devices were manufactured by using the 350 nm bulk complementary MOS (CMOS) integrated circuits technology. The diamond MOSFET with α angles higher or equal to 90° tends to present a smaller vulnerability to the high doses ionizing radiation than those observed in the typical rectangular MOSFET counterparts.

Simultaneous Bistability of a Qubit and Resonator in Circuit Quantum Electrodynamics

NASA Astrophysics Data System (ADS)

Mavrogordatos, Th. K.; Tancredi, G.; Elliott, M.; Peterer, M. J.; Patterson, A.; Rahamim, J.; Leek, P. J.; Ginossar, E.; Szymańska, M. H.

2017-01-01

We explore the joint activated dynamics exhibited by two quantum degrees of freedom: a cavity mode oscillator which is strongly coupled to a superconducting qubit in the strongly coherently driven dispersive regime. Dynamical simulations and complementary measurements show a range of parameters where both the cavity and the qubit exhibit sudden simultaneous switching between two metastable states. This manifests in ensemble averaged amplitudes of both the cavity and qubit exhibiting a partial coherent cancellation. Transmission measurements of driven microwave cavities coupled to transmon qubits show detailed features which agree with the theory in the regime of simultaneous switching.

Method for shallow junction formation

DOEpatents

Weiner, K.H.

1996-10-29

A doping sequence is disclosed that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated. 8 figs.

Method for shallow junction formation

DOEpatents

Weiner, Kurt H.

1996-01-01

A doping sequence that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated.

Ultra-high-extinction-ratio 2 × 2 silicon optical switch with variable splitter.

PubMed

Suzuki, Keijiro; Cong, Guangwei; Tanizawa, Ken; Kim, Sang-Hun; Ikeda, Kazuhiro; Namiki, Shu; Kawashima, Hitoshi

2015-04-06

We demonstrate a record-high extinction-ratio of 50.4 dB in a 2 × 2 silicon Mach-Zehnder switch equipped with a variable splitter as the front 3-dB splitter. The variable splitter is adjusted to compensate for the splitting-ratio mismatch between the front and rear 3-dB splitters. The high extinction ratio does not rely on waveguide crossings and meets a strong demand in applications to multiport circuit switches. Large fabrication tolerance will make the high extinction ratio compatible with a volume production with standard complementary metal-oxide semiconductor fabrication facilities.

Silicon-controlled-rectifier square-wave inverter with protection against commutation failure

NASA Technical Reports Server (NTRS)

Birchenough, A. G.

1971-01-01

The square-wave SCR inverter that was designed, built, and tested includes a circuit to turn off the inverter in case of commutation failure. The basic power stage is a complementary impulse-commutated parallel inverter consisting of only six components. The 400-watt breadboard was tested while operating at + or - 28 volts, and it had a peak efficiency of 95.5 percent at 60 hertz and 91.7 percent at 400 hertz. The voltage regulation for a fixed input was 3 percent at 60 hertz. An analysis of the operation and design information is included.

Flip-flop logic circuit based on fully solution-processed organic thin film transistor devices with reduced variations in electrical performance

NASA Astrophysics Data System (ADS)

Takeda, Yasunori; Yoshimura, Yudai; Adib, Faiz Adi Ezarudin Bin; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2015-04-01

Organic reset-set (RS) flip-flop logic circuits based on pseudo-CMOS inverters have been fabricated using full solution processing at a relatively low process temperatures of 150 °C or less. The work function for printed silver electrodes was increased from 4.7 to 5.4 eV through surface modification with a self-assembled monolayer (SAM) material. A bottom-gate, bottom-contact organic thin-film transistor (OTFT) device using a solution-processable small-molecular semiconductor material exhibited field-effect mobility of 0.40 cm2 V-1 s-1 in the saturation region and a threshold voltage (VTH) of -2.4 V in ambient air operation conditions. In order to reduce the variations in mobility and VTH, we designed a circuit with six transistors arranged in parallel, in order to average out their electrical characteristics. As a result, we have succeeded in reducing these variations without changing the absolute values of the mobility and VTH. The fabricated RS flip-flop circuits were functioned well and exhibited short delay times of 3.5 ms at a supply voltage of 20 V.

Percutaneous transendocardial delivery of self-complementary adeno-associated virus 6 achieves global cardiac gene transfer in canines

PubMed Central

Bish, Lawrence T.; Sleeper, Meg M.; Brainard, Benjamin; Cole, Stephen; Russell, Nicholas; Withnall, Elanor; Arndt, Jason; Reynolds, Caryn; Davison, Ellen; Sanmiguel, Julio; Wu, Di; Gao, Guangping; Wilson, James M.; Sweeney, H. Lee

2011-01-01

Achieving efficient cardiac gene transfer in a large animal model has proven to be technically challenging. Prior strategies have employed cardio-pulmonary bypass or dual catheterization with the aid of vasodilators to deliver vectors, such as adenovirus, adeno-associated virus or plasmid DNA. While single stranded adeno-associated virus vectors have shown the greatest promise, they suffer from delayed expression, which might be circumvented by using self-complementary vectors. We sought to optimize cardiac gene transfer using a percutaneous transendocardial injection catheter to deliver adeno-associated virus vectors to the canine myocardium. Four vectors were evaluated—single stranded adeno-associated virus 9, self-complementary adeno-associated virus 9, self-complementary adeno-associated virus 8, self-complementary adeno-associated virus 6—so that comparison could be made between single stranded and self complementary vectors as well as among serotypes 9, 8, and 6. We demonstrate that self-complementary adeno-associated virus is superior to single stranded adeno-associated virus and that adeno-associated virus 6 is superior to other serotypes evaluated. Biodistribution studies revealed that vector genome copies were 15 to 4000 times more abundant in the heart than in any other organ for self-complementary adeno-associated virus 6. Percutaneous transendocardial injection of self-complementary adeno-associated virus 6 is a safe, effective method for achieving efficient cardiac gene transfer. PMID:18813281

US Spending On Complementary And Alternative Medicine During 2002–08 Plateaued, Suggesting Role In Reformed Health System

PubMed Central

Davis, Matthew A.; Martin, Brook I.; Coulter, Ian D.; Weeks, William B.

2013-01-01

Complementary and alternative medicine services in the United States are an approximately $9 billion market each year, equal to 3 percent of national ambulatory health care expenditures. Unlike conventional allopathic health care, complementary and alternative medicine is primarily paid for out of pocket, although some services are covered by most health insurance. Examining trends in demand for complementary and alternative medicine services in the United States reported in the Medical Expenditure Panel Survey during 2002–08, we found that use of and spending on these services, previously on the rise, have largely plateaued. The higher proportion of out-of-pocket responsibility for payment for services may explain the lack of growth. Our findings suggest that any attempt to reduce national health care spending by eliminating coverage for complementary and alternative medicine would have little impact at best. Should some forms of complementary and alternative medicine—for example, chiropractic care for back pain—be proven more efficient than allopathic and specialty medicine, the inclusion of complementary and alternative medicine providers in new delivery systems such as accountable care organizations could help slow growth in national health care spending. PMID:23297270

DESIGN OF CIRCUITS FOR THE PATTERN ARTICULATION UNIT. Report No. 127

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, K.C.

1962-08-31

The Pattern Articulation Unit embodies a central core of 1024 identical processing modules called stalactites'' arranged in a two-dimensional array with only local connectivity. Two possible complete circuit realizations of the stalactite are described. Stalactites of either design contain about 50 transistors, 250 diodes, 250 resistors, and 50 capacitors. Stalactite organization, signal flow, the bubbling register connection, the requirements of a working register, design of stacking logic, mode of operation, circuit design, direct and conditional input, design of bubbling logic, complement circuits, output and circuit, up and down drivers, and cable diivers and terminators are described. Experimental verification of variousmore » components is discussed. (M.C.G.)« less

A new LTPS TFT AC pixel circuit for an AMOLED

NASA Astrophysics Data System (ADS)

Yongwen, Zhang; Wenbin, Chen

2013-01-01

This work presents a new voltage programmed pixel circuit for an active-matrix organic light-emitting diode (AMOLED) display. The proposed pixel circuit consists of six low temperature polycrystalline silicon thin-film transistors (LTPS TFTs), one storage capacitor, and one OLED, and is verified by simulation work using HSPICE software. Besides effectively compensating for the threshold voltage variation of the driving TFT and OLED, the proposed pixel circuit offers an AC driving mode for the OLED, which can suppress the degradation of the OLED. Moreover, a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period.

Frequency specific brain networks in Parkinson's disease and comorbid depression.

PubMed

Qian, Long; Zhang, Yi; Zheng, Li; Fu, Xuemei; Liu, Weiguo; Shang, Yuqing; Zhang, Yaoyu; Xu, Yuanyuan; Liu, Yijun; Zhu, Huaiqiu; Gao, Jia-Hong

2017-02-01

The topological organization underlying the human brain was extensively investigated using resting-state functional magnetic resonance imaging, focusing on a low frequency of signal oscillation from 0.01 to 0.1 Hz. However, the frequency specificities with regard to the topological properties of the brain networks have not been fully revealed. In this study, a novel complementary ensemble empirical mode decomposition (CEEMD) method was used to separate the fMRI time series into five characteristic oscillations with distinct frequencies. Then, the small world properties of brain networks were analyzed for each of these five oscillations in patients (n = 67) with depressed Parkinson's disease (DPD, n = 20) , non-depressed Parkinson's disease (NDPD, n = 47) and healthy controls (HC, n = 46). Compared with HC, the results showed decreased network efficiency in characteristic oscillations from 0.05 to 0.12 Hz and from 0.02 to 0.05 Hz for the DPD and NDPD patients, respectively. Furthermore, compared with HC, the most significant inter-group difference across five brain oscillations was found in the basal ganglia (0.01 to 0.05 Hz) and paralimbic-limbic network (0.02 to 0.22 Hz) for the DPD patients, and in the visual cortex (0.02 to 0.05 Hz) for the NDPD patients. Compared with NDPD, the DPD patients showed reduced efficiency of nodes in the basal ganglia network (0.01 to 0.05 Hz). Our results demonstrated that DPD is characterized by a disrupted topological organization in large-scale brain functional networks. Moreover, the CEEMD analysis suggested a prominent dissociation in the topological organization of brain networks between DPD and NDPD in both space and frequency domains. Our findings indicated that these characteristic oscillatory activities in different functional circuits may contribute to distinct motor and non-motor components of clinical impairments in Parkinson's disease.

Acceptor Percolation Determines How Electron-Accepting Additives Modify Transport of Ambipolar Polymer Organic Field-Effect Transistors.

PubMed

Ford, Michael J; Wang, Ming; Bustillo, Karen C; Yuan, Jianyu; Nguyen, Thuc-Quyen; Bazan, Guillermo C

2018-06-18

Organic field-effect transistors (OFETs) that utilize ambipolar polymer semiconductors can benefit from the ability of both electron and hole conduction, which is necessary for complementary circuits. However, simultaneous hole and electron transport in organic field-effect transistors result in poor ON/OFF ratios, limiting potential applications. Solution processing methods have been developed to control charge transport properties and transform ambipolar conduction to hole-only conduction. The electron-acceptor phenyl-C61-butyric acid methyl ester (PC 61 BM), when mixed in solution with an ambipolar semiconducting polymer, can reduce electron conduction. Unipolar p-type OFETs with high, well-defined ON/OFF ratios and without detrimental effects on hole conduction are achieved for a wide range of blend compositions, from 95:5 to 5:95 wt % semiconductor polymer:PC 61 BM. When introducing the alternative acceptor N, N'-bis(1-ethylpropyl)-3,4:9,10-perylenediimide (PDI), high ON/OFF ratios are achieved for 95:5 wt % semiconductor polymer:PDI; however, electron conduction increases for 50:50 and 5:95 wt % semiconductor polymer:PDI. As described within, we show that electron conduction is practically eliminated when additive domains do not percolate across the OFET channel, that is, electrons are "morphologically trapped". Morphologies were characterized by optical, electron, and atomic force microscopy as well as X-ray scattering techniques. PC 61 BM was substituted with an endohedral Lu 3 N fullerene, which enhanced contrast in electron microscopy and allowed for more detailed insight into the blend morphologies. Blends with alternative, nonfullerene acceptors further emphasize the importance of morphology and acceptor percolation, providing insights for such blends that control ambipolar transport and ON/OFF ratios.

A spatially localized architecture for fast and modular DNA computing

NASA Astrophysics Data System (ADS)

Chatterjee, Gourab; Dalchau, Neil; Muscat, Richard A.; Phillips, Andrew; Seelig, Georg

2017-09-01

Cells use spatial constraints to control and accelerate the flow of information in enzyme cascades and signalling networks. Synthetic silicon-based circuitry similarly relies on spatial constraints to process information. Here, we show that spatial organization can be a similarly powerful design principle for overcoming limitations of speed and modularity in engineered molecular circuits. We create logic gates and signal transmission lines by spatially arranging reactive DNA hairpins on a DNA origami. Signal propagation is demonstrated across transmission lines of different lengths and orientations and logic gates are modularly combined into circuits that establish the universality of our approach. Because reactions preferentially occur between neighbours, identical DNA hairpins can be reused across circuits. Co-localization of circuit elements decreases computation time from hours to minutes compared to circuits with diffusible components. Detailed computational models enable predictive circuit design. We anticipate our approach will motivate using spatial constraints for future molecular control circuit designs.

Constraint and Contingency in Multifunctional Gene Regulatory Circuits

PubMed Central

Payne, Joshua L.; Wagner, Andreas

2013-01-01

Gene regulatory circuits drive the development, physiology, and behavior of organisms from bacteria to humans. The phenotypes or functions of such circuits are embodied in the gene expression patterns they form. Regulatory circuits are typically multifunctional, forming distinct gene expression patterns in different embryonic stages, tissues, or physiological states. Any one circuit with a single function can be realized by many different regulatory genotypes. Multifunctionality presumably constrains this number, but we do not know to what extent. We here exhaustively characterize a genotype space harboring millions of model regulatory circuits and all their possible functions. As a circuit's number of functions increases, the number of genotypes with a given number of functions decreases exponentially but can remain very large for a modest number of functions. However, the sets of circuits that can form any one set of functions becomes increasingly fragmented. As a result, historical contingency becomes widespread in circuits with many functions. Whether a circuit can acquire an additional function in the course of its evolution becomes increasingly dependent on the function it already has. Circuits with many functions also become increasingly brittle and sensitive to mutation. These observations are generic properties of a broad class of circuits and independent of any one circuit genotype or phenotype. PMID:23762020

From Spontaneous Motor Activity to Coordinated Behaviour: A Developmental Model

PubMed Central

Marques, Hugo Gravato; Bharadwaj, Arjun; Iida, Fumiya

2014-01-01

In mammals, the developmental path that links the primary behaviours observed during foetal stages to the full fledged behaviours observed in adults is still beyond our understanding. Often theories of motor control try to deal with the process of incremental learning in an abstract and modular way without establishing any correspondence with the mammalian developmental stages. In this paper, we propose a computational model that links three distinct behaviours which appear at three different stages of development. In order of appearance, these behaviours are: spontaneous motor activity (SMA), reflexes, and coordinated behaviours, such as locomotion. The goal of our model is to address in silico four hypotheses that are currently hard to verify in vivo: First, the hypothesis that spinal reflex circuits can be self-organized from the sensor and motor activity induced by SMA. Second, the hypothesis that supraspinal systems can modulate reflex circuits to achieve coordinated behaviour. Third, the hypothesis that, since SMA is observed in an organism throughout its entire lifetime, it provides a mechanism suitable to maintain the reflex circuits aligned with the musculoskeletal system, and thus adapt to changes in body morphology. And fourth, the hypothesis that by changing the modulation of the reflex circuits over time, one can switch between different coordinated behaviours. Our model is tested in a simulated musculoskeletal leg actuated by six muscles arranged in a number of different ways. Hopping is used as a case study of coordinated behaviour. Our results show that reflex circuits can be self-organized from SMA, and that, once these circuits are in place, they can be modulated to achieve coordinated behaviour. In addition, our results show that our model can naturally adapt to different morphological changes and perform behavioural transitions. PMID:25057775

Magnetomicrofluidics Circuits for Organizing Bioparticle Arrays

NASA Astrophysics Data System (ADS)

Abedini-Nassab, Roozbeh

Single-cell analysis (SCA) tools have important applications in the analysis of phenotypic heterogeneity, which is difficult or impossible to analyze in bulk cell culture or patient samples. SCA tools thus have a myriad of applications ranging from better credentialing of drug therapies to the analysis of rare latent cells harboring HIV infection or in Cancer. However, existing SCA systems usually lack the required combination of programmability, flexibility, and scalability necessary to enable the study of cell behaviors and cell-cell interactions at the scales sufficient to analyze extremely rare events. To advance the field, I have developed a novel, programmable, and massively-parallel SCA tool which is based on the principles of computer circuits. By integrating these magnetic circuits with microfluidics channels, I developed a platform that can organize a large number of single particles into an array in a controlled manner. My magnetophoretic circuits use passive elements constructed in patterned magnetic thin films to move cells along programmed tracks with an external rotating magnetic field. Cell motion along these tracks is analogous to the motion of charges in an electrical conductor, following a rule similar to Ohm's law. I have also developed asymmetric conductors, similar to electrical diodes, and storage sites for cells that behave similarly to electrical capacitors. I have also developed magnetophoretic circuits which use an overlaid pattern of microwires to switch single cells between different tracks. This switching mechanism, analogous to the operation of electronic transistors, is achieved by establishing a semiconducting gap in the magnetic pattern which can be changed from an insulating state to a conducting state by application of electrical current to an overlaid electrode. I performed an extensive study on the operation of transistors to optimize their geometry and minimize the required gate currents. By combining these elements into integrated circuits, I have built devices which are capable of organizing a precise number of cells into individually addressable array sites, similar to how a random access memory (RAM) stores electronic data. My programmable magnetic circuits allow for the organization of both cells and single-cell pairs into large arrays. Single cells can also potentially be retrieved for downstream high-throughput genomic analysis. In order to enhance the efficiency of the tool and to increase the delivery speed of the particles, I have also developed microfluidics systems that are combined with the magnetophoretic circuits. This hybrid system, called magnetomicrofluidics, is capable of rapidly organizing an array of particles and cells with the high precision and control. I have also shown that cells can be grown inside these chips for multiple days, enabling the long-term phenotypic analysis of rare cellular events. These types of studies can reveal important insights about the intercellular signaling networks and answer crucial questions in biology and immunology.

Viral-genetic tracing of the input-output organization of a central noradrenaline circuit.

PubMed

Schwarz, Lindsay A; Miyamichi, Kazunari; Gao, Xiaojing J; Beier, Kevin T; Weissbourd, Brandon; DeLoach, Katherine E; Ren, Jing; Ibanes, Sandy; Malenka, Robert C; Kremer, Eric J; Luo, Liqun

2015-08-06

Deciphering how neural circuits are anatomically organized with regard to input and output is instrumental in understanding how the brain processes information. For example, locus coeruleus noradrenaline (also known as norepinephrine) (LC-NE) neurons receive input from and send output to broad regions of the brain and spinal cord, and regulate diverse functions including arousal, attention, mood and sensory gating. However, it is unclear how LC-NE neurons divide up their brain-wide projection patterns and whether different LC-NE neurons receive differential input. Here we developed a set of viral-genetic tools to quantitatively analyse the input-output relationship of neural circuits, and applied these tools to dissect the LC-NE circuit in mice. Rabies-virus-based input mapping indicated that LC-NE neurons receive convergent synaptic input from many regions previously identified as sending axons to the locus coeruleus, as well as from newly identified presynaptic partners, including cerebellar Purkinje cells. The 'tracing the relationship between input and output' method (or TRIO method) enables trans-synaptic input tracing from specific subsets of neurons based on their projection and cell type. We found that LC-NE neurons projecting to diverse output regions receive mostly similar input. Projection-based viral labelling revealed that LC-NE neurons projecting to one output region also project to all brain regions we examined. Thus, the LC-NE circuit overall integrates information from, and broadcasts to, many brain regions, consistent with its primary role in regulating brain states. At the same time, we uncovered several levels of specificity in certain LC-NE sub-circuits. These tools for mapping output architecture and input-output relationship are applicable to other neuronal circuits and organisms. More broadly, our viral-genetic approaches provide an efficient intersectional means to target neuronal populations based on cell type and projection pattern.

High-efficiency broadband excitation and propagation of second-mode spoof surface plasmon polaritons by a complementary structure.

PubMed

Zhang, Dawei; Zhang, Kuang; Wu, Qun; Yang, Guohui; Sha, Xuejun

2017-07-15

A complementary structure based on coplanar waveguides (CPWs) with periodical etching slots is proposed to support spoof surface plasmon polaritons (SSPPs). In contrast to the traditional slotline-based complementary SSPP structure, a dispersion curve of the second mode by the proposed structure has a much lower starting point from the origin which exhibits greatly improved operating bandwidth. Moreover, tighter confinements of SSPPs in the region of small wave vectors corresponding to lower frequencies can be predicted from the dispersion analysis, which means enhancement of transmission efficiency. Then a simple and efficient transition structure with tapered CPWs and gradient slots is proposed to realize high-efficiency and broadband excitation of the second mode of SSPPs for the first time, to the best of our knowledge. Based on the proposed structure, a seamless connection between CPWs and the SSPP structure can be achieved. The measured insertion loss and return loss below 6.6 GHz is better than -0.86 and -13.62  dB, respectively. Furthermore, it can be seen from the measurement results that a 3 dB bandwidth ranges from 0 to 10.57 GHz, and the return loss is better than -10  dB from 0 to 8.96 GHz. The proposed structure can promote the development of plasmonic integrate circuits and functional devices at microwave frequencies.

Nonfullerene Tandem Organic Solar Cells with High Open-Circuit Voltage of 1.97 V.

PubMed

Liu, Wenqing; Li, Shuixing; Huang, Jiang; Yang, Shida; Chen, Jiehuan; Zuo, Lijian; Shi, Minmin; Zhan, Xiaowei; Li, Chang-Zhi; Chen, Hongzheng

2016-11-01

Small-molecule nonfullerene-based tandem organic solar cells (OSCs) are fabricated for the first time by utilizing P3HT:SF(DPPB) 4 and PTB7-Th:IEIC bulk heterojunctions as the front and back subcells, respectively. A power conversion efficiency of 8.48% is achieved with an ultrahigh open-circuit voltage of 1.97 V, which is the highest voltage value reported to date among efficient tandem OSCs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

75 FR 38857 - Self-Regulatory Organizations; The NASDAQ Stock Market LLC; Notice of Filing of Proposed Rule...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-07-06

... Pricing for Direct Circuit Connections June 28, 2010. Pursuant to Section 19(b)(1) of the Securities... proposed rule change to establish pricing for 10Gb direct circuit connections and codify pricing for 10Gb...

Serotonin and the neuropeptide PDF initiate and extend opposing behavioral states in C. elegans.

PubMed

Flavell, Steven W; Pokala, Navin; Macosko, Evan Z; Albrecht, Dirk R; Larsch, Johannes; Bargmann, Cornelia I

2013-08-29

Foraging animals have distinct exploration and exploitation behaviors that are organized into discrete behavioral states. Here, we characterize a neuromodulatory circuit that generates long-lasting roaming and dwelling states in Caenorhabditis elegans. We find that two opposing neuromodulators, serotonin and the neuropeptide pigment dispersing factor (PDF), each initiate and extend one behavioral state. Serotonin promotes dwelling states through the MOD-1 serotonin-gated chloride channel. The spontaneous activity of serotonergic neurons correlates with dwelling behavior, and optogenetic modulation of the critical MOD-1-expressing targets induces prolonged dwelling states. PDF promotes roaming states through a Gαs-coupled PDF receptor; optogenetic activation of cAMP production in PDF receptor-expressing cells induces prolonged roaming states. The neurons that produce and respond to each neuromodulator form a distributed circuit orthogonal to the classical wiring diagram, with several essential neurons that express each molecule. The slow temporal dynamics of this neuromodulatory circuit supplement fast motor circuits to organize long-lasting behavioral states. Copyright © 2013 Elsevier Inc. All rights reserved.

Serotonin and the Neuropeptide PDF Initiate and Extend Opposing Behavioral States in C. elegans

PubMed Central

Flavell, Steven W.; Pokala, Navin; Macosko, Evan Z.; Albrecht, Dirk R.; Larsch, Johannes; Bargmann, Cornelia I.

2013-01-01

SUMMARY Foraging animals have distinct exploration and exploitation behaviors that are organized into discrete behavioral states. Here we characterize a neuromodulatory circuit that generates long-lasting roaming and dwelling states in Caenorhabditis elegans. We find that two opposing neuromodulators, serotonin and the neuropeptide pigment dispersing factor (PDF), each initiate and extend one behavioral state. Serotonin promotes dwelling states through the MOD-1 serotonin-gated chloride channel. The spontaneous activity of serotonergic neurons correlates with dwelling behavior, and optogenetic modulation of the critical MOD-1-expressing targets induces prolonged dwelling states. PDF promotes roaming states through a Gαs-coupled PDF receptor; optogenetic activation of cAMP production in PDF receptor-expressing cells induces prolonged roaming states. The neurons that produce and respond to each neuromodulator form a distributed circuit orthogonal to the classical wiring diagram, with several essential neurons that express each molecule. The slow temporal dynamics of this neuromodulatory circuit supplement fast motor circuits to organize long-lasting behavioral states. PMID:23972393

Carbon Nanotube Driver Circuit for 6 × 6 Organic Light Emitting Diode Display

PubMed Central

Zou, Jianping; Zhang, Kang; Li, Jingqi; Zhao, Yongbiao; Wang, Yilei; Pillai, Suresh Kumar Raman; Volkan Demir, Hilmi; Sun, Xiaowei; Chan-Park, Mary B.; Zhang, Qing

2015-01-01

Single-walled carbon nanotube (SWNT) is expected to be a very promising material for flexible and transparent driver circuits for active matrix organic light emitting diode (AM OLED) displays due to its high field-effect mobility, excellent current carrying capacity, optical transparency and mechanical flexibility. Although there have been several publications about SWNT driver circuits, none of them have shown static and dynamic images with the AM OLED displays. Here we report on the first successful chemical vapor deposition (CVD)-grown SWNT network thin film transistor (TFT) driver circuits for static and dynamic AM OLED displays with 6 × 6 pixels. The high device mobility of ~45 cm2V−1s−1 and the high channel current on/off ratio of ~105 of the SWNT-TFTs fully guarantee the control capability to the OLED pixels. Our results suggest that SWNT-TFTs are promising backplane building blocks for future OLED displays. PMID:26119218

Evolution of central pattern generators and rhythmic behaviours

PubMed Central

Katz, Paul S.

2016-01-01

Comparisons of rhythmic movements and the central pattern generators (CPGs) that control them uncover principles about the evolution of behaviour and neural circuits. Over the course of evolutionary history, gradual evolution of behaviours and their neural circuitry within any lineage of animals has been a predominant occurrence. Small changes in gene regulation can lead to divergence of circuit organization and corresponding changes in behaviour. However, some behavioural divergence has resulted from large-scale rewiring of the neural network. Divergence of CPG circuits has also occurred without a corresponding change in behaviour. When analogous rhythmic behaviours have evolved independently, it has generally been with different neural mechanisms. Repeated evolution of particular rhythmic behaviours has occurred within some lineages due to parallel evolution or latent CPGs. Particular motor pattern generating mechanisms have also evolved independently in separate lineages. The evolution of CPGs and rhythmic behaviours shows that although most behaviours and neural circuits are highly conserved, the nature of the behaviour does not dictate the neural mechanism and that the presence of homologous neural components does not determine the behaviour. This suggests that although behaviour is generated by neural circuits, natural selection can act separately on these two levels of biological organization. PMID:26598733

Evolution of central pattern generators and rhythmic behaviours.

PubMed

Katz, Paul S

2016-01-05

Comparisons of rhythmic movements and the central pattern generators (CPGs) that control them uncover principles about the evolution of behaviour and neural circuits. Over the course of evolutionary history, gradual evolution of behaviours and their neural circuitry within any lineage of animals has been a predominant occurrence. Small changes in gene regulation can lead to divergence of circuit organization and corresponding changes in behaviour. However, some behavioural divergence has resulted from large-scale rewiring of the neural network. Divergence of CPG circuits has also occurred without a corresponding change in behaviour. When analogous rhythmic behaviours have evolved independently, it has generally been with different neural mechanisms. Repeated evolution of particular rhythmic behaviours has occurred within some lineages due to parallel evolution or latent CPGs. Particular motor pattern generating mechanisms have also evolved independently in separate lineages. The evolution of CPGs and rhythmic behaviours shows that although most behaviours and neural circuits are highly conserved, the nature of the behaviour does not dictate the neural mechanism and that the presence of homologous neural components does not determine the behaviour. This suggests that although behaviour is generated by neural circuits, natural selection can act separately on these two levels of biological organization. © 2015 The Author(s).

Alternative Packaging for Back-Illuminated Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2009-01-01

An alternative scheme has been conceived for packaging of silicon-based back-illuminated, back-side-thinned complementary metal oxide/semiconductor (CMOS) and charge-coupled-device image-detector integrated circuits, including an associated fabrication process. This scheme and process are complementary to those described in "Making a Back-Illuminated Imager With Back-Side Connections" (NPO-42839), NASA Tech Briefs, Vol. 32, No. 7 (July 2008), page 38. To avoid misunderstanding, it should be noted that in the terminology of imaging integrated circuits, "front side" or "back side" does not necessarily refer to the side that, during operation, faces toward or away from a source of light or other object to be imaged. Instead, "front side" signifies that side of a semiconductor substrate upon which the pixel pattern and the associated semiconductor devices and metal conductor lines are initially formed during fabrication, and "back side" signifies the opposite side. If the imager is of the type called "back-illuminated," then the back side is the one that faces an object to be imaged. Initially, a back-illuminated, back-side-thinned image-detector is fabricated with its back side bonded to a silicon handle wafer. At a subsequent stage of fabrication, the front side is bonded to a glass wafer (for mechanical support) and the silicon handle wafer is etched away to expose the back side. The frontside integrated circuitry includes metal input/output contact pads, which are rendered inaccessible by the bonding of the front side to the glass wafer. Hence, one of the main problems is to make the input/output contact pads accessible from the back side, which is ultimately to be the side accessible to the external world. The present combination of an alternative packaging scheme and associated fabrication process constitute a solution of the problem.

Ternary Nonfullerene Polymer Solar Cells with 12.16% Efficiency by Introducing One Acceptor with Cascading Energy Level and Complementary Absorption.

PubMed

Jiang, Weigang; Yu, Runnan; Liu, Zhiyang; Peng, Ruixiang; Mi, Dongbo; Hong, Ling; Wei, Qiang; Hou, Jianhui; Kuang, Yongbo; Ge, Ziyi

2018-01-01

A novel small-molecule acceptor, (2,2'-((5E,5'E)-5,5'-((5,5'-(4,4,9,9-tetrakis(5-hexylthiophen-2-yl)-4,9-dihydro-s-indaceno[1,2-b:5,6-b']dithiophene-2,7-diyl)bis(4-(2-ethylhexyl)thiophene-5,2-diyl))bis(methanylylidene)) bis(3-hexyl-4-oxothiazolidine-5,2-diylidene))dimalononitrile (ITCN), end-capped with electron-deficient 2-(3-hexyl-4-oxothiazolidin-2-ylidene)malononitrile groups, is designed, synthesized, and used as the third component in fullerene-free ternary polymer solar cells (PSCs). The cascaded energy-level structure enabled by the newly designed acceptor is beneficial to the carrier transport and separation. Meanwhile, the three materials show a complementary absorption in the visible region, resulting in efficient light harvesting. Hence, the PBDB-T:ITCN:IT-M ternary PSCs possess a high short-circuit current density (J sc ) under an optimal weight ratio of donors and acceptors. Moreover, the open-circuit voltage (V oc ) of the ternary PSCs is enhanced with an increase of the third acceptor ITCN content, which is attributed to the higher lowest unoccupied molecular orbital energy level of ITCN than that of IT-M, thus exhibits a higher V oc in PBDB-T:ITCN binary system. Ultimately, the ternary PSCs achieve a power conversion efficiency of 12.16%, which is higher than the PBDB-T:ITM-based PSCs (10.89%) and PBDB-T:ITCN-based ones (2.21%). This work provides an effective strategy to improve the photovoltaic performance of PSCs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Training and operation of an integrated neuromorphic network based on metal-oxide memristors.

PubMed

Prezioso, M; Merrikh-Bayat, F; Hoskins, B D; Adam, G C; Likharev, K K; Strukov, D B

2015-05-07

Despite much progress in semiconductor integrated circuit technology, the extreme complexity of the human cerebral cortex, with its approximately 10(14) synapses, makes the hardware implementation of neuromorphic networks with a comparable number of devices exceptionally challenging. To provide comparable complexity while operating much faster and with manageable power dissipation, networks based on circuits combining complementary metal-oxide-semiconductors (CMOSs) and adjustable two-terminal resistive devices (memristors) have been developed. In such circuits, the usual CMOS stack is augmented with one or several crossbar layers, with memristors at each crosspoint. There have recently been notable improvements in the fabrication of such memristive crossbars and their integration with CMOS circuits, including first demonstrations of their vertical integration. Separately, discrete memristors have been used as artificial synapses in neuromorphic networks. Very recently, such experiments have been extended to crossbar arrays of phase-change memristive devices. The adjustment of such devices, however, requires an additional transistor at each crosspoint, and hence these devices are much harder to scale than metal-oxide memristors, whose nonlinear current-voltage curves enable transistor-free operation. Here we report the experimental implementation of transistor-free metal-oxide memristor crossbars, with device variability sufficiently low to allow operation of integrated neural networks, in a simple network: a single-layer perceptron (an algorithm for linear classification). The network can be taught in situ using a coarse-grain variety of the delta rule algorithm to perform the perfect classification of 3 × 3-pixel black/white images into three classes (representing letters). This demonstration is an important step towards much larger and more complex memristive neuromorphic networks.

Anterior wrist and medial malleolus as the novel sites of tissue selection: a retrospective study on electric shock death through the hand-to-foot circuit pathway.

PubMed

Xu, Guangtao; Su, Ruibing; Lv, Junyao; Hu, Bo; Gu, Huan; Li, Xianxian; Gu, Jiang; Yu, Xiaojun

2017-05-01

Our previous work demonstrated that characteristic changes could occur in the anterior wrist and medial malleolus in electric deaths through the hand-to-foot electric circuit pathway in an electric shock rat model. However, whether the same phenomenon occurs in humans is unknown. The aim of the present retrospective study was to ascertain whether the anterior wrist and medial malleolus could also be selected as the promising and significant sites in electric death through the hand-to-foot circuit pathway. Nineteen human cases from the autopsy and one clinical survivor who sustained a severe electric shock through the hand-to-foot circuit pathway were analyzed. Additional ten autopsy patients who died from traffic accidents and sudden cardiac attacks were used as the control group. Histopathological changes in the soft tissues of the anterior wrist and medial malleolus in all autopsy patients, as well as the electric current pathway of the survivor, were observed. The results showed that the nuclear polarizations in the anterior wrist and medial malleolus soft tissues of the electric death were extremely noticeable as compared with the controls. The most severe electrical injury in the survivor occurred in the anterior wrist. These findings suggest that the soft tissues of the anterior wrist and/or the medial malleolus as the narrowest parts of the limbs could be used as the complementary sites for tissue selection and considered as necessary locations for examinations to assess the electric death in medicolegal identification.

Lithography for enabling advances in integrated circuits and devices.

PubMed

Garner, C Michael

2012-08-28

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

A portable expression resource for engineering cross-species genetic circuits and pathways

PubMed Central

Kushwaha, Manish; Salis, Howard M.

2015-01-01

Genetic circuits and metabolic pathways can be reengineered to allow organisms to process signals and manufacture useful chemicals. However, their functions currently rely on organism-specific regulatory parts, fragmenting synthetic biology and metabolic engineering into host-specific domains. To unify efforts, here we have engineered a cross-species expression resource that enables circuits and pathways to reuse the same genetic parts, while functioning similarly across diverse organisms. Our engineered system combines mixed feedback control loops and cross-species translation signals to autonomously self-regulate expression of an orthogonal polymerase without host-specific promoters, achieving nontoxic and tuneable gene expression in diverse Gram-positive and Gram-negative bacteria. Combining 50 characterized system variants with mechanistic modelling, we show how the cross-species expression resource's dynamics, capacity and toxicity are controlled by the control loops' architecture and feedback strengths. We also demonstrate one application of the resource by reusing the same genetic parts to express a biosynthesis pathway in both model and non-model hosts. PMID:26184393

Degradation of 2,4,6-trichlorophenol and determination of bacterial community structure by micro-electrical stimulation with or without external organic carbon source.

PubMed

Xu, Hao; Tong, Na; Huang, Shaobin; Zhou, Shaofeng; Li, Shuang; Li, Jianjun; Zhang, Yongqing

2018-05-03

This study aimed to investigate the degradation efficiency of 2,4,6-trichlorophenol through a batch of potentiostatic experiments (0.2 V vs. Ag/AgCl). Efficiencies in the presence and absence of acetate and glucose were compared through open-circuit reference experiments. Significant differences in degradation efficiency were observed in six reactors. The highest and lowest degradation efficiencies were observed in the closed-circuit reactor fed with glucose and in the open-circuit reactor, respectively. This finding was due to the enhanced bacterial metabolism caused by the application of micro-electrical field and degradable organics as co-substrates. The different treatment efficiencies were also caused by the distinct bacterial communities. The composition of bacterial community was affected by adding different organics as co-substrates. At the phylum level, the most dominant bacteria in the reactor with the added acetate and glucose were Proteobacteria and Firmicutes, respectively. Copyright © 2018 Elsevier Ltd. All rights reserved.

General Electronics Technician: Semiconductor Devices and Circuits.

ERIC Educational Resources Information Center

Hilley, Robert

These instructional materials include a teacher's guide designed to assist instructors in organizing and presenting an introductory course in general electronics focusing on semiconductor devices and circuits and a student guide. The materials are based on the curriculum-alignment concept of first stating the objectives, developing instructional…

Degradation of organic pollutants by Ag, Cu and Sn doped waste non-metallic printed circuit boards.

PubMed

Ramaswamy, Kadari; Radha, Velchuri; Malathi, M; Vithal, Muga; Munirathnam, Nagegownivari R

2017-02-01

The disposal and reuse of waste printed circuit boards have been the major global concerns. Printed circuit boards, a form of Electronic waste (hereafter e-waste), have been chemically processed, doped with Ag + , Cu 2+ and Sn 2+ , and used as visible light photocatalysts against the degradation of methylene blue and methyl violet. The elemental analyses of pristine and metal doped printed circuit board were obtained using energy dispersive X-ray fluorescence (EDXRF) spectra and inductively coupled plasma optical emission spectroscopy (ICP-OES). The morphology of parent and doped printed circuit board was obtained from scanning electron microscopy (SEM) measurements. The photocatalytic activity of parent and metal doped samples was carried out for the decomposition of organic pollutants, methylene blue and methyl violet, under visible light irradiation. Metal doped waste printed circuit boards (WPCBs) have shown higher photocatalytic activity against the degradation of methyl violet and methylene blue under visible light irradiation. Scavenger experiments were performed to identify the reactive intermediates responsible for the degradation of methylene blue and methyl violet. The reactive species responsible for the degradation of MV and MB were found to be holes and hydroxyl radicals. A possible mechanism of degradation of methylene blue and methyl violet is given. The stability and reusability of the catalysts are also investigated. Copyright © 2016. Published by Elsevier Ltd.

Ultra-high gain diffusion-driven organic transistor.

PubMed

Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

2016-02-01

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal-semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics.

Ultra-high gain diffusion-driven organic transistor

NASA Astrophysics Data System (ADS)

Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

2016-02-01

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal-semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics.

Building New Bridges: Linking Organization Theory with Other Educational Literatures

ERIC Educational Resources Information Center

Johnson, Bob L., Jr.; Owens, Michael

2005-01-01

Purpose: This paper provides an example of how organization theory can be linked with other literatures in a complementary and productive manner. Establishing a bridge between the organization theory and learning environment literatures, the authors seek to provide an example of how such literature-bridging can enrich our understanding of the…

Single-photon imaging in complementary metal oxide semiconductor processes

PubMed Central

Charbon, E.

2014-01-01

This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging and biomedical imaging, to name just a few. The paper focuses on architectures that are best suited to those applications and the trade-offs they generate. In this context, architectures are described that efficiently collect the output of single pixels when designed in large arrays. Off-chip readout circuit requirements are described for a variety of applications in physics, medicine and the life sciences. Owing to the dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of silicon real estate and of limited readout bandwidth. The paper also describes the main trade-offs involved in architecting such chips and the solutions adopted with focus on scalability and miniaturization. PMID:24567470

Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

PubMed

Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

2015-01-14

The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

9 CFR 306.1 - Designation of circuit supervisor and assistants.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 9 Animals and Animal Products 2 2014-01-01 2014-01-01 false Designation of circuit supervisor and assistants. 306.1 Section 306.1 Animals and Animal Products FOOD SAFETY AND INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE AGENCY ORGANIZATION AND TERMINOLOGY; MANDATORY MEAT AND POULTRY PRODUCTS INSPECTION AND VOLUNTARY...

9 CFR 306.1 - Designation of circuit supervisor and assistants.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 9 Animals and Animal Products 2 2010-01-01 2010-01-01 false Designation of circuit supervisor and assistants. 306.1 Section 306.1 Animals and Animal Products FOOD SAFETY AND INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE AGENCY ORGANIZATION AND TERMINOLOGY; MANDATORY MEAT AND POULTRY PRODUCTS INSPECTION AND VOLUNTARY...

Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters.

PubMed

Jeong, Yong Jin; An, Tae Kyu; Yun, Dong-Jin; Kim, Lae Ho; Park, Seonuk; Kim, Yebyeol; Nam, Sooji; Lee, Keun Hyung; Kim, Se Hyun; Jang, Jaeyoung; Park, Chan Eon

2016-03-02

Complementary inverters consisting of p-type organic and n-type metal oxide semiconductors have received considerable attention as key elements for realizing low-cost and large-area future electronics. Solution-processed ZnO thin-film transistors (TFTs) have great potential for use in hybrid complementary inverters as n-type load transistors because of the low cost of their fabrication process and natural abundance of active materials. The integration of a single ZnO TFT into an inverter requires the development of a simple patterning method as an alternative to conventional time-consuming and complicated photolithography techniques. In this study, we used a photocurable polymer precursor, zinc acrylate (or zinc diacrylate, ZDA), to conveniently fabricate photopatternable ZnO thin films for use as the active layers of n-type ZnO TFTs. UV-irradiated ZDA thin films became insoluble in developing solvent as the acrylate moiety photo-cross-linked; therefore, we were able to successfully photopattern solution-processed ZDA thin films using UV light. We studied the effects of addition of a tiny amount of indium dopant on the transistor characteristics of the photopatterned ZnO thin films and demonstrated low-voltage operation of the ZnO TFTs within ±3 V by utilizing Al2O3/TiO2 laminate thin films or ion-gels as gate dielectrics. By combining the ZnO TFTs with p-type pentacene TFTs, we successfully fabricated organic/inorganic hybrid complementary inverters using solution-processed and photopatterned ZnO TFTs.

Tri-state logic circuit

NASA Technical Reports Server (NTRS)

Pryor, Richard Lee (Inventor)

1977-01-01

A line driver including a pair of complementary transistors having their conduction paths serially connected between an operating and a reference potential and their bases connected through a first switch to a signal input terminal. A second switch is connected between the common base connection and the common connection of the conduction paths. With the second switch open and the first closed, an output voltage, responsive to the input signal, corresponding to first or second binary values is obtained. When the second switch is closed and the first opened, the transistor pair is turned off, disconnecting the line driver from its load, thereby providing tri-state logic operation.

Design and evaluation of basic standard encryption algorithm modules using nanosized complementary metal oxide semiconductor molecular circuits

NASA Astrophysics Data System (ADS)

Masoumi, Massoud; Raissi, Farshid; Ahmadian, Mahmoud; Keshavarzi, Parviz

2006-01-01

We are proposing that the recently proposed semiconductor-nanowire-molecular architecture (CMOL) is an optimum platform to realize encryption algorithms. The basic modules for the advanced encryption standard algorithm (Rijndael) have been designed using CMOL architecture. The performance of this design has been evaluated with respect to chip area and speed. It is observed that CMOL provides considerable improvement over implementation with regular CMOS architecture even with a 20% defect rate. Pseudo-optimum gate placement and routing are provided for Rijndael building blocks and the possibility of designing high speed, attack tolerant and long key encryptions are discussed.

Synchronization of heteroclinic circuits through learning in coupled neural networks

NASA Astrophysics Data System (ADS)

Selskii, Anton; Makarov, Valeri A.

2016-01-01

The synchronization of oscillatory activity in neural networks is usually implemented by coupling the state variables describing neuronal dynamics. Here we study another, but complementary mechanism based on a learning process with memory. A driver network, acting as a teacher, exhibits winner-less competition (WLC) dynamics, while a driven network, a learner, tunes its internal couplings according to the oscillations observed in the teacher. We show that under appropriate training the learner can "copy" the coupling structure and thus synchronize oscillations with the teacher. The replication of the WLC dynamics occurs for intermediate memory lengths only, consequently, the learner network exhibits a phenomenon of learning resonance.

Complementary junction heterostructure field-effect transistor

DOEpatents

Baca, Albert G.; Drummond, Timothy J.; Robertson, Perry J.; Zipperian, Thomas E.

1995-01-01

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

Complementary junction heterostructure field-effect transistor

DOEpatents

Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

1995-12-26

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

The Intersection of CMOS Microsystems and Upconversion Nanoparticles for Luminescence Bioimaging and Bioassays

PubMed Central

Wei, Liping.; Doughan, Samer.; Han, Yi.; DaCosta, Matthew V.; Krull, Ulrich J.; Ho, Derek.

2014-01-01

Organic fluorophores and quantum dots are ubiquitous as contrast agents for bio-imaging and as labels in bioassays to enable the detection of biological targets and processes. Upconversion nanoparticles (UCNPs) offer a different set of opportunities as labels in bioassays and for bioimaging. UCNPs are excited at near-infrared (NIR) wavelengths where biological molecules are optically transparent, and their luminesce in the visible and ultraviolet (UV) wavelength range is suitable for detection using complementary metal-oxide-semiconductor (CMOS) technology. These nanoparticles provide multiple sharp emission bands, long lifetimes, tunable emission, high photostability, and low cytotoxicity, which render them particularly useful for bio-imaging applications and multiplexed bioassays. This paper surveys several key concepts surrounding upconversion nanoparticles and the systems that detect and process the corresponding luminescence signals. The principle of photon upconversion, tuning of emission wavelengths, UCNP bioassays, and UCNP time-resolved techniques are described. Electronic readout systems for signal detection and processing suitable for UCNP luminescence using CMOS technology are discussed. This includes recent progress in miniaturized detectors, integrated spectral sensing, and high-precision time-domain circuits. Emphasis is placed on the physical attributes of UCNPs that map strongly to the technical features that CMOS devices excel in delivering, exploring the interoperability between the two technologies. PMID:25211198

Smart single-chip gas sensor microsystem

NASA Astrophysics Data System (ADS)

Hagleitner, C.; Hierlemann, A.; Lange, D.; Kummer, A.; Kerness, N.; Brand, O.; Baltes, H.

2001-11-01

Research activity in chemical gas sensing is currently directed towards the search for highly selective (bio)chemical layer materials, and to the design of arrays consisting of different partially selective sensors that permit subsequent pattern recognition and multi-component analysis. Simultaneous use of various transduction platforms has been demonstrated, and the rapid development of integrated-circuit technology has facilitated the fabrication of planar chemical sensors and sensors based on three-dimensional microelectromechanical systems. Complementary metal-oxide silicon processes have previously been used to develop gas sensors based on metal oxides and acoustic-wave-based sensor devices. Here we combine several of these developments to fabricate a smart single-chip chemical microsensor system that incorporates three different transducers (mass-sensitive, capacitive and calorimetric), all of which rely on sensitive polymeric layers to detect airborne volatile organic compounds. Full integration of the microelectronic and micromechanical components on one chip permits control and monitoring of the sensor functions, and enables on-chip signal amplification and conditioning that notably improves the overall sensor performance. The circuitry also includes analog-to-digital converters, and an on-chip interface to transmit the data to off-chip recording units. We expect that our approach will provide a basis for the further development and optimization of gas microsystems.

Ternary Solar Cells Based on Two Small Molecule Donors with Same Conjugated Backbone: The Role of Good Miscibility and Hole Relay Process.

PubMed

Xiao, Liangang; Liang, Tianxiang; Gao, Ke; Lai, Tianqi; Chen, Xuebin; Liu, Feng; Russell, Thomas P; Huang, Fei; Peng, Xiaobin; Cao, Yong

2017-09-06

Ternary organic solar cells (OSCs) are very attractive for further enhancing the power conversion efficiencies (PCEs) of binary ones but still with a single active layer. However, improving the PCEs is still challenging because a ternary cell with one more component is more complicated on phase separation behavior. If the two donors or two acceptors have similar chemical structures, good miscibility can be expected to reduce the try-and-error work. Herein, we report ternary devices based on two small molecule donors with the same backbone but different substituents. Whereas both binary devices show PCEs about 9%, the PCE of the ternary cells is enhanced to 10.17% with improved fill factor and short-circuit current values and external quantum efficiencies almost in the whole absorption wavelength region from 440 to 850 nm. The same backbone enables the donors miscible at molecular level, and the donor with a higher HOMO level plays hole relay process to facilitate the charge transportation in the ternary devices. Since side-chain engineering has been well performed to tune the active materials' energy levels in OSCs, our results suggest that their ternary systems are promising for further improving the binary cells' performance although their absorptions are not complementary.

Molecular clock integration of brown adipose tissue formation and function

PubMed Central

Nam, Deokhwa; Yechoor, Vijay K.; Ma, Ke

2016-01-01

Abstract The circadian clock is an essential time-keeping mechanism that entrains internal physiology to environmental cues. Despite the well-established link between the molecular clock and metabolic homeostasis, an intimate interplay between the clock machinery and the metabolically active brown adipose tissue (BAT) is only emerging. Recently, we came to appreciate that the formation and metabolic functions of BAT, a key organ for body temperature maintenance, are under an orchestrated circadian clock regulation. Two complementary studies from our group uncover that the cell-intrinsic clock machinery exerts concerted control of brown adipogenesis with consequent impacts on adaptive thermogenesis, which adds a previously unappreciated temporal dimension to the regulatory mechanisms governing BAT development and function. The essential clock transcriptional activator, Bmal1, suppresses adipocyte lineage commitment and differentiation, whereas the clock repressor, Rev-erbα, promotes these processes. This newly discovered temporal mechanism in fine-tuning BAT thermogenic capacity may enable energy utilization and body temperature regulation in accordance with external timing signals during development and functional recruitment. Given the important role of BAT in whole-body metabolic homeostasis, pharmacological interventions targeting the BAT-modulatory activities of the clock circuit may offer new avenues for the prevention and treatment of metabolic disorders, particularly those associated with circadian dysregulation. PMID:27385482

Quantum dot rolled-up microtube optoelectronic integrated circuit.

PubMed

Bhowmick, Sishir; Frost, Thomas; Bhattacharya, Pallab

2013-05-15

A rolled-up microtube optoelectronic integrated circuit operating as a phototransceiver is demonstrated. The microtube is made of a InGaAs/GaAs strained bilayer with InAs self-organized quantum dots inserted in the GaAs layer. The phototransceiver consists of an optically pumped microtube laser and a microtube photoconductive detector connected by an a-Si/SiO2 waveguide. The loss in the waveguide and responsivity of the entire phototransceiver circuit are 7.96 dB/cm and 34 mA/W, respectively.

Printed wiring board system programmer's manual

NASA Technical Reports Server (NTRS)

Brinkerhoff, C. D.

1973-01-01

The printed wiring board system provides automated techniques for the design of printed circuit boards and hybrid circuit boards. The system consists of four programs: (1) the preprocessor program combines user supplied data and pre-defined library data to produce the detailed circuit description data; (2) the placement program assigns circuit components to specific areas of the board in a manner that optimizes the total interconnection length of the circuit; (3) the organizer program assigns pin interconnections to specific board levels and determines the optimal order in which the router program should attempt to layout the paths connecting the pins; and (4) the router program determines the wire paths which are to be used to connect each input pin pair on the circuit board. This document is intended to serve as a programmer's reference manual for the printed wiring board system. A detailed description of the internal logic and flow of the printed wiring board programs is included.

Integrated circuit-based instrumentation for microchip capillary electrophoresis.

PubMed

Behnam, M; Kaigala, G V; Khorasani, M; Martel, S; Elliott, D G; Backhouse, C J

2010-09-01

Although electrophoresis with laser-induced fluorescence (LIF) detection has tremendous potential in lab on chip-based point-of-care disease diagnostics, the wider use of microchip electrophoresis has been limited by the size and cost of the instrumentation. To address this challenge, the authors designed an integrated circuit (IC, i.e. a microelectronic chip, with total silicon area of <0.25 cm2, less than 5 mmx5 mm, and power consumption of 28 mW), which, with a minimal additional infrastructure, can perform microchip electrophoresis with LIF detection. The present work enables extremely compact and inexpensive portable systems consisting of one or more complementary metal-oxide-semiconductor (CMOS) chips and several other low-cost components. There are, to the authors' knowledge, no other reports of a CMOS-based LIF capillary electrophoresis instrument (i.e. high voltage generation, switching, control and interface circuit combined with LIF detection). This instrument is powered and controlled using a universal serial bus (USB) interface to a laptop computer. The authors demonstrate this IC in various configurations and can readily analyse the DNA produced by a standard medical diagnostic protocol (end-labelled polymerase chain reaction (PCR) product) with a limit of detection of approximately 1 ng/microl (approximately 1 ng of total DNA). The authors believe that this approach may ultimately enable lab-on-a-chip-based electrophoretic instruments that cost on the order of several dollars.

A fully integrated oven controlled microelectromechanical oscillator -- Part I. Design and fabrication

DOE PAGES

Wojciechowski, Kenneth E.; Baker, Michael S.; Clews, Peggy J.; ...

2015-06-24

Our paper reports the design and fabrication of a fully integrated oven controlled microelectromechanical oscillator (OCMO). This paper begins by describing the limits on oscillator frequency stability imposed by the thermal drift and electronic properties (Q, resistance) of both the resonant tank circuit and feedback electronics required to form an electronic oscillator. An OCMO is presented that takes advantage of high thermal isolation and monolithic integration of both micromechanical resonators and electronic circuitry to thermally stabilize or ovenize all the components that comprise an oscillator. This was achieved by developing a processing technique where both silicon-on-insulator complementary metal-oxide-semiconductor (CMOS) circuitrymore » and piezoelectric aluminum nitride, AlN, micromechanical resonators are placed on a suspended platform within a standard CMOS integrated circuit. Operation at microscale sizes achieves high thermal resistances (~10 °C/mW), and hence thermal stabilization of the oscillators at very low-power levels when compared with the state-of-the-art ovenized crystal oscillators, OCXO. This constant resistance feedback circuit is presented that incorporates on platform resistive heaters and temperature sensors to both measure and stabilize the platform temperature. Moreover, the limits on temperature stability of the OCMO platform and oscillator frequency imposed by the gain of the constant resistance feedback loop, placement of the heater and temperature sensing resistors, as well as platform radiative and convective heat losses are investigated.« less

Low-Power Analog Processing for Sensing Applications: Low-Frequency Harmonic Signal Classification

PubMed Central

White, Daniel J.; William, Peter E.; Hoffman, Michael W.; Balkir, Sina

2013-01-01

A low-power analog sensor front-end is described that reduces the energy required to extract environmental sensing spectral features without using Fast Fouriér Transform (FFT) or wavelet transforms. An Analog Harmonic Transform (AHT) allows selection of only the features needed by the back-end, in contrast to the FFT, where all coefficients must be calculated simultaneously. We also show that the FFT coefficients can be easily calculated from the AHT results by a simple back-substitution. The scheme is tailored for low-power, parallel analog implementation in an integrated circuit (IC). Two different applications are tested with an ideal front-end model and compared to existing studies with the same data sets. Results from the military vehicle classification and identification of machine-bearing fault applications shows that the front-end suits a wide range of harmonic signal sources. Analog-related errors are modeled to evaluate the feasibility of and to set design parameters for an IC implementation to maintain good system-level performance. Design of a preliminary transistor-level integrator circuit in a 0.13 μm complementary metal-oxide-silicon (CMOS) integrated circuit process showed the ability to use online self-calibration to reduce fabrication errors to a sufficiently low level. Estimated power dissipation is about three orders of magnitude less than similar vehicle classification systems that use commercially available FFT spectral extraction. PMID:23892765

Low-power low-voltage superior-order curvature corrected voltage reference

NASA Astrophysics Data System (ADS)

Popa, Cosmin

2010-06-01

A complementary metal oxide semiconductor (CMOS) voltage reference with a logarithmic curvature-correction will be presented. The first-order compensation is realised using an original offset voltage follower (OVF) block as a proportional to absolute temperature (PTAT) voltage generator, with the advantages of reducing the silicon area and of increasing accuracy by replacing matched resistors with matched transistors. The new logarithmic curvature-correction technique will be implemented using an asymmetric differential amplifier (ADA) block for compensating the logarithmic temperature dependent term from the first-order compensated voltage reference. In order to increase the circuit accuracy, an original temperature-dependent current generator will be designed for computing the exact type of the implemented curvature-correction. The relatively small complexity of the current squarer allows an important increasing of the circuit accuracy that could be achieved by increasing the current generator complexity. As a result of operating most of the MOS transistors in weak inversion, the original proposed voltage reference could be valuable for low-power applications. The circuit is implemented in 0.35 μm CMOS technology and consumes only 60μA for t = 25°C, being supplied at the minimal supply voltage V DD = 1.75V. The temperature coefficient of the reference voltage is 8.7 ppm/°C, while the line sensitivity is 0.75 mV/V for a supply voltage between 1.75 V and 7 V.

Improved Signal Chains for Readout of CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Hancock, Bruce; Cunningham, Thomas

2009-01-01

An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.

Influence of a MoOx interlayer on the open-circuit voltage in organic photovoltaic cells

NASA Astrophysics Data System (ADS)

Zou, Yunlong; Holmes, Russell J.

2013-07-01

Metal-oxides have been used as interlayers at the anode-organic interface in organic photovoltaic cells (OPVs) to increase the open-circuit voltage (VOC). We examine the role of MoOx in determining the maximum VOC in a planar heterojunction OPV and find that the interlayer strongly affects the temperature dependence of VOC. Boron subphthalocyanine chloride (SubPc)-C60 OPVs that contain no interlayer show a maximum VOC of 1.2 V at low temperature, while those with MoOx show no saturation, reaching VOC > 1.4 V. We propose that the MoOx-SubPc interface forms a Schottky junction that provides an additional contribution to VOC at low temperature.

RETHINKING THE EMOTIONAL BRAIN

PubMed Central

LeDoux, Joseph

2013-01-01

I propose a re-conceptualization of key phenomena important in the study of emotion — those phenomena that reflect functions and circuits related to survival, and that are shared by humans and other animals. The approach shifts the focus from questions about whether emotions that humans consciously feel are also present in other animals, and towards questions about the extent to which circuits and corresponding functions that are present in other animals (survival circuits and functions) are also present in humans. Survival circuit functions are not causally related to emotional feelings, but obviously contribute to these, at least indirectly. The survival circuit concept integrates ideas about emotion, motivation, reinforcement, and arousal in the effort to understand how organisms survive and thrive by detecting and responding to challenges and opportunities in daily life. PMID:22365542

Neural circuit basis of visuo-spatial working memory precision: a computational and behavioral study.

PubMed

Almeida, Rita; Barbosa, João; Compte, Albert

2015-09-01

The amount of information that can be retained in working memory (WM) is limited. Limitations of WM capacity have been the subject of intense research, especially in trying to specify algorithmic models for WM. Comparatively, neural circuit perspectives have barely been used to test WM limitations in behavioral experiments. Here we used a neuronal microcircuit model for visuo-spatial WM (vsWM) to investigate memory of several items. The model assumes that there is a topographic organization of the circuit responsible for spatial memory retention. This assumption leads to specific predictions, which we tested in behavioral experiments. According to the model, nearby locations should be recalled with a bias, as if the two memory traces showed attraction or repulsion during the delay period depending on distance. Another prediction is that the previously reported loss of memory precision for an increasing number of memory items (memory load) should vanish when the distances between items are controlled for. Both predictions were confirmed experimentally. Taken together, our findings provide support for a topographic neural circuit organization of vsWM, they suggest that interference between similar memories underlies some WM limitations, and they put forward a circuit-based explanation that reconciles previous conflicting results on the dependence of WM precision with load. Copyright © 2015 the American Physiological Society.

The Bio-Logic and machinery of plant morphogenesis.

PubMed

Niklas, Karl J

2003-04-01

Morphogenesis (the development of organic form) requires signal-trafficking and cross-talking across all levels of organization to coordinate the operation of metabolic and genomic networked systems. Many biologists are currently converging on the pictorial conventions of computer scientists to render biological signaling as logic circuits supervising the operation of one or more signal-activated metabolic or gene networks. This approach can redact and simplify complex morphogenetic phenomena and allows for their aggregation into diagrams of larger, more "global" networked systems. This conceptualization is discussed in terms of how logic circuits and signal-activated subsystems work, and it is illustrated for examples of increasingly more complex morphogenetic phenomena, e.g., auxin-mediated cell expansion, entry into the mitotic cell cycle phases, and polar/lateral intercellular auxin transport. For each of these phenomena, a posited circuit/subsystem diagram draws rapid attention to missing components, either in the logic circuit or in the subsystem it supervises. These components must be identified experimentally if each of these basic phenomena is to be fully understood. Importantly, the power of the circuit/subsystem approach to modeling developmental phenomena resides not in its pictorial appeal but in the mathematical tools that are sufficiently strong to reveal and quantify the synergistics of networked systems and thus foster a better understanding of morphogenesis.

Darwinism Then and Now: The Divide over Form and Function

ERIC Educational Resources Information Center

Ruse, Michael

2010-01-01

As biologists have recognized since Aristotle, there are two complementary ways of looking at organisms: one can think of them from the viewpoint of homology, asking about the isomorphisms between different organisms and even within the organisms themselves; or one can think of them from the viewpoint of adaptation or final cause, asking about the…

Fully integrated low-noise readout circuit with automatic offset cancellation loop for capacitive microsensors.

PubMed

Song, Haryong; Park, Yunjong; Kim, Hyungseup; Cho, Dong-Il Dan; Ko, Hyoungho

2015-10-14

Capacitive sensing schemes are widely used for various microsensors; however, such microsensors suffer from severe parasitic capacitance problems. This paper presents a fully integrated low-noise readout circuit with automatic offset cancellation loop (AOCL) for capacitive microsensors. The output offsets of the capacitive sensing chain due to the parasitic capacitances and process variations are automatically removed using AOCL. The AOCL generates electrically equivalent offset capacitance and enables charge-domain fine calibration using a 10-bit R-2R digital-to-analog converter, charge-transfer switches, and a charge-storing capacitor. The AOCL cancels the unwanted offset by binary-search algorithm based on 10-bit successive approximation register (SAR) logic. The chip is implemented using 0.18 μm complementary metal-oxide-semiconductor (CMOS) process with an active area of 1.76 mm². The power consumption is 220 μW with 3.3 V supply. The input parasitic capacitances within the range of -250 fF to 250 fF can be cancelled out automatically, and the required calibration time is lower than 10 ms.

Fully Integrated Low-Noise Readout Circuit with Automatic Offset Cancellation Loop for Capacitive Microsensors

PubMed Central

Song, Haryong; Park, Yunjong; Kim, Hyungseup; Cho, Dong-il Dan; Ko, Hyoungho

2015-01-01

Capacitive sensing schemes are widely used for various microsensors; however, such microsensors suffer from severe parasitic capacitance problems. This paper presents a fully integrated low-noise readout circuit with automatic offset cancellation loop (AOCL) for capacitive microsensors. The output offsets of the capacitive sensing chain due to the parasitic capacitances and process variations are automatically removed using AOCL. The AOCL generates electrically equivalent offset capacitance and enables charge-domain fine calibration using a 10-bit R-2R digital-to-analog converter, charge-transfer switches, and a charge-storing capacitor. The AOCL cancels the unwanted offset by binary-search algorithm based on 10-bit successive approximation register (SAR) logic. The chip is implemented using 0.18 μm complementary metal-oxide-semiconductor (CMOS) process with an active area of 1.76 mm2. The power consumption is 220 μW with 3.3 V supply. The input parasitic capacitances within the range of −250 fF to 250 fF can be cancelled out automatically, and the required calibration time is lower than 10 ms. PMID:26473877

A 32-bit Ultrafast Parallel Correlator using Resonant Tunneling Devices

NASA Technical Reports Server (NTRS)

Kulkarni, Shriram; Mazumder, Pinaki; Haddad, George I.

1995-01-01

An ultrafast 32-bit pipeline correlator has been implemented using resonant tunneling diodes (RTD) and hetero-junction bipolar transistors (HBT). The negative differential resistance (NDR) characteristics of RTD's is the basis of logic gates with the self-latching property that eliminates pipeline area and delay overheads which limit throughput in conventional technologies. The circuit topology also allows threshold logic functions such as minority/majority to be implemented in a compact manner resulting in reduction of the overall complexity and delay of arbitrary logic circuits. The parallel correlator is an essential component in code division multi-access (CDMA) transceivers used for the continuous calculation of correlation between an incoming data stream and a PN sequence. Simulation results show that a nano-pipelined correlator can provide and effective throughput of one 32-bit correlation every 100 picoseconds, using minimal hardware, with a power dissipation of 1.5 watts. RTD plus HBT based logic gates have been fabricated and the RTD plus HBT based correlator is compared with state of the art complementary metal oxide semiconductor (CMOS) implementations.

An inductorless active mixer using stacked nMOS/pMOS configuration and LO shaping technique

NASA Astrophysics Data System (ADS)

Guo, Benqing; Chen, Jun; Wang, Xuebing; Chen, Hongpeng

2018-04-01

In this paper, a CMOS active down-conversion mixer is presented for wideband applications. Specifically, a LO generation chain is suggested to convert AC LO signal to shaped trapezoid burst, which reduces the sinusoidal LO power level requirement by the mixer. The current-reuse technique by stacked nMOS/pMOS architecture is used to save the power consumption of the circuit. Moreover, this complementary configuration is also employed to compensate second-order nonlinearity of the circuit. Implemented in a 0.18-μm CMOS process, post-simulations show that, driven by only ‑10 dBm sinusoidal LO signal, the proposed inductorless mixer provides a maximal conversion gain of 15.7 dB and a noise figure (NF) of 9.1-12 dB across RF input frequency range 0.5-1.6 GHz. The IIP3 and IP1dB of 3.5 dBm and ‑4.8 dBm are obtained, respectively. The mixer core only consumes 3.6 mW from a 1.8-V supply.

A miniaturized neuroprosthesis suitable for implantation into the brain

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Binkley, David; Blalock, Benjamin; Andersen, Richard; Ulshoefer, Norbert; Johnson, Travis; Del Castillo, Linda

2003-01-01

This paper presents current research on a miniaturized neuroprosthesis suitable for implantation into the brain. The prosthesis is a heterogeneous integration of a 100-element microelectromechanical system (MEMS) electrode array, front-end complementary metal-oxide-semiconductor (CMOS) integrated circuit for neural signal preamplification, filtering, multiplexing and analog-to-digital conversion, and a second CMOS integrated circuit for wireless transmission of neural data and conditioning of wireless power. The prosthesis is intended for applications where neural signals are processed and decoded to permit the control of artificial or paralyzed limbs. This research, if successful, will allow implantation of the electronics into the brain, or subcutaneously on the skull, and eliminate all external signal and power wiring. The neuroprosthetic system design has strict size and power constraints with each of the front-end preamplifier channels fitting within the 400 x 400-microm pitch of the 100-element MEMS electrode array and power dissipation resulting in less than a 1 degree C temperature rise for the surrounding brain tissue. We describe the measured performance of initial micropower low-noise CMOS preamplifiers for the neuroprosthetic.

Simultaneous Increase in Open-Circuit Voltage and Efficiency of Fullerene-Free Solar Cells through Chlorinated Thieno[3,4-b]thiophene Polymer Donor

DOE PAGES

Wang, Huan; Chao, Pengjie; Chen, Hui; ...

2017-08-01

Here, the chlorinated polymer, PBTCl, have been found to be an efficient donor in non-fullerene PSCs, which showed a blue-shifted absorbance compared to that of its fluorine analog (PTB7-th), and resulted in a more complementary light absorption with non-fullerene acceptor, such as ITIC. Meanwhile, chlorine substitution lowered the HOMO level of PBTCl, which increased the open-circuit voltage of the corresponding polymer-based devices. The 2D GIWAXS analysis illustrated that the PBTCl/ITIC blend film exhibited a “face-on” orientation and scattering features of both PBTCl and ITIC, suggesting that the blend of PBTCl and ITIC was phase separated and formed individual crystalline domainsmore » of the donor and acceptor, which promoted charge transfer in the bi-continuous film and eventually elevated the solar energy conversion efficiency. The PBTCl-based non-fullerene PSC exhibited a maximum PCE of 7.57% with a Voc of 0.91 V, which was an approximately 13% increasing in the PCE compared to the fluorine-analog-based device.« less

An integrated semiconductor device enabling non-optical genome sequencing.

PubMed

Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

2011-07-20

The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.

Multi-physics modelling contributions to investigate the atmospheric cosmic rays on the single event upset sensitivity along the scaling trend of CMOS technologies.

PubMed

Hubert, G; Regis, D; Cheminet, A; Gatti, M; Lacoste, V

2014-10-01

Particles originating from primary cosmic radiation, which hit the Earth's atmosphere give rise to a complex field of secondary particles. These particles include neutrons, protons, muons, pions, etc. Since the 1980s it has been known that terrestrial cosmic rays can penetrate the natural shielding of buildings, equipment and circuit package and induce soft errors in integrated circuits. Recently, research has shown that commercial static random access memories are now so small and sufficiently sensitive that single event upsets (SEUs) may be induced from the electronic stopping of a proton. With continued advancements in process size, this downward trend in sensitivity is expected to continue. Then, muon soft errors have been predicted for nano-electronics. This paper describes the effects in the specific cases such as neutron-, proton- and muon-induced SEU observed in complementary metal-oxide semiconductor. The results will allow investigating the technology node sensitivity along the scaling trend. © The Author 2014. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Simultaneous Increase in Open-Circuit Voltage and Efficiency of Fullerene-Free Solar Cells through Chlorinated Thieno[3,4- b ]thiophene Polymer Donor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Huan; Chao, Pengjie; Chen, Hui

The chlorinated polymer, PBTCl, has been found to be an efficient donor in nonfullerene polymer solar cells (PSCs), which showed a blue-shifted absorbance compared to that of its fluorine analogue (PTB7-th) and resulted in more complementary light absorption with a nonfullerene acceptor, such as ITIC. Meanwhile, chlorine substitution lowered the HOMO level of PBTCl, which increased the open-circuit voltage of the corresponding polymer-based devices. The 2D GIWAXS analysis illustrated that the PBTCl/ITIC blend film exhibited a “face-on” orientation and scattering features of both PBTCl and ITIC, suggesting that the blend of PBTCl and ITIC was phase-separated and formed individual crystallinemore » domains of the donor and acceptor, which promoted charge transfer in the bicontinuous film and eventually elevated the solar energy conversion efficiency. The PBTCl-based nonfullerene PSC exhibited a maximum PCE of 7.57% with a Voc of 0.91 V, which was an approximately 13% increasing in the PCE compared to that of the fluorine-analogue-based device.« less

Simultaneous Increase in Open-Circuit Voltage and Efficiency of Fullerene-Free Solar Cells through Chlorinated Thieno[3,4-b]thiophene Polymer Donor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Huan; Chao, Pengjie; Chen, Hui

Here, the chlorinated polymer, PBTCl, have been found to be an efficient donor in non-fullerene PSCs, which showed a blue-shifted absorbance compared to that of its fluorine analog (PTB7-th), and resulted in a more complementary light absorption with non-fullerene acceptor, such as ITIC. Meanwhile, chlorine substitution lowered the HOMO level of PBTCl, which increased the open-circuit voltage of the corresponding polymer-based devices. The 2D GIWAXS analysis illustrated that the PBTCl/ITIC blend film exhibited a “face-on” orientation and scattering features of both PBTCl and ITIC, suggesting that the blend of PBTCl and ITIC was phase separated and formed individual crystalline domainsmore » of the donor and acceptor, which promoted charge transfer in the bi-continuous film and eventually elevated the solar energy conversion efficiency. The PBTCl-based non-fullerene PSC exhibited a maximum PCE of 7.57% with a Voc of 0.91 V, which was an approximately 13% increasing in the PCE compared to the fluorine-analog-based device.« less

Integration of Si-CMOS embedded photo detector array and mixed signal processing system with embedded optical waveguide input

NASA Astrophysics Data System (ADS)

Kim, Daeik D.; Thomas, Mikkel A.; Brooke, Martin A.; Jokerst, Nan M.

2004-06-01

Arrays of embedded bipolar junction transistor (BJT) photo detectors (PD) and a parallel mixed-signal processing system were fabricated as a silicon complementary metal oxide semiconductor (Si-CMOS) circuit for the integration optical sensors on the surface of the chip. The circuit was fabricated with AMI 1.5um n-well CMOS process and the embedded PNP BJT PD has a pixel size of 8um by 8um. BJT PD was chosen to take advantage of its higher gain amplification of photo current than that of PiN type detectors since the target application is a low-speed and high-sensitivity sensor. The photo current generated by BJT PD is manipulated by mixed-signal processing system, which consists of parallel first order low-pass delta-sigma oversampling analog-to-digital converters (ADC). There are 8 parallel ADCs on the chip and a group of 8 BJT PDs are selected with CMOS switches. An array of PD is composed of three or six groups of PDs depending on the number of rows.

78 FR 21657 - Self-Regulatory Organizations; International Securities Exchange LLC; Order Approving, on an...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-04-11

... securities suddenly declining by significant amounts in a very short time period before suddenly reversing to... circuit breaker pilot program, which was implemented through a series of rule filings by the equity exchanges and by FINRA.\\9\\ The single-stock circuit breaker was designed to reduce extraordinary market...

9 CFR 306.1 - Designation of circuit supervisor and assistants.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 9 Animals and Animal Products 2 2012-01-01 2012-01-01 false Designation of circuit supervisor and assistants. 306.1 Section 306.1 Animals and Animal Products FOOD SAFETY AND INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE AGENCY ORGANIZATION AND TERMINOLOGY; MANDATORY MEAT AND POULTRY PRODUCTS INSPECTION AND VOLUNTARY INSPECTION AND CERTIFICATION...

9 CFR 306.1 - Designation of circuit supervisor and assistants.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 9 Animals and Animal Products 2 2013-01-01 2013-01-01 false Designation of circuit supervisor and assistants. 306.1 Section 306.1 Animals and Animal Products FOOD SAFETY AND INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE AGENCY ORGANIZATION AND TERMINOLOGY; MANDATORY MEAT AND POULTRY PRODUCTS INSPECTION AND VOLUNTARY INSPECTION AND CERTIFICATION...

9 CFR 306.1 - Designation of circuit supervisor and assistants.

Code of Federal Regulations, 2011 CFR

2011-01-01

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Plant Development, Auxin, and the Subsystem Incompleteness Theorem

PubMed Central

Niklas, Karl J.; Kutschera, Ulrich

2012-01-01

Plant morphogenesis (the process whereby form develops) requires signal cross-talking among all levels of organization to coordinate the operation of metabolic and genomic subsystems operating in a larger network of subsystems. Each subsystem can be rendered as a logic circuit supervising the operation of one or more signal-activated system. This approach simplifies complex morphogenetic phenomena and allows for their aggregation into diagrams of progressively larger networks. This technique is illustrated here by rendering two logic circuits and signal-activated subsystems, one for auxin (IAA) polar/lateral intercellular transport and another for IAA-mediated cell wall loosening. For each of these phenomena, a circuit/subsystem diagram highlights missing components (either in the logic circuit or in the subsystem it supervises) that must be identified experimentally if each of these basic plant phenomena is to be fully understood. We also illustrate the “subsystem incompleteness theorem,” which states that no subsystem is operationally self-sufficient. Indeed, a whole-organism perspective is required to understand even the most simple morphogenetic process, because, when isolated, every biological signal-activated subsystem is morphogenetically ineffective. PMID:22645582

Organization of Functional Long-Range Circuits Controlling the Activity of Serotonergic Neurons in the Dorsal Raphe Nucleus.

PubMed

Zhou, Li; Liu, Ming-Zhe; Li, Qing; Deng, Juan; Mu, Di; Sun, Yan-Gang

2017-03-21

Serotonergic neurons play key roles in various biological processes. However, circuit mechanisms underlying tight control of serotonergic neurons remain largely unknown. Here, we systematically investigated the organization of long-range synaptic inputs to serotonergic neurons and GABAergic neurons in the dorsal raphe nucleus (DRN) of mice with a combination of viral tracing, slice electrophysiological, and optogenetic techniques. We found that DRN serotonergic neurons and GABAergic neurons receive largely comparable synaptic inputs from six major upstream brain areas. Upon further analysis of the fine functional circuit structures, we found both bilateral and ipsilateral patterns of topographic connectivity in the DRN for the axons from different inputs. Moreover, the upstream brain areas were found to bidirectionally control the activity of DRN serotonergic neurons by recruiting feedforward inhibition or via a push-pull mechanism. Our study provides a framework for further deciphering the functional roles of long-range circuits controlling the activity of serotonergic neurons in the DRN. Copyright © 2017 The Author(s). Published by Elsevier Inc. All rights reserved.

Complex computation in the retina

NASA Astrophysics Data System (ADS)

Deshmukh, Nikhil Rajiv

Elucidating the general principles of computation in neural circuits is a difficult problem requiring both a tractable model circuit as well as sophisticated measurement tools. This thesis advances our understanding of complex computation in the salamander retina and its underlying circuitry and furthers the development of advanced tools to enable detailed study of neural circuits. The retina provides an ideal model system for neural circuits in general because it is capable of producing complex representations of the visual scene, and both its inputs and outputs are accessible to the experimenter. Chapter 2 describes the biophysical mechanisms that give rise to the omitted stimulus response in retinal ganglion cells described in Schwartz et al., (2007) and Schwartz and Berry, (2008). The extra response to omitted flashes is generated at the input to bipolar cells, and is separable from the characteristic latency shift of the OSR apparent in ganglion cells, which must occur downstream in the circuit. Chapter 3 characterizes the nonlinearities at the first synapse of the ON pathway in response to high contrast flashes and develops a phenomenological model that captures the effect of synaptic activation and intracellular signaling dynamics on flash responses. This work is the first attempt to model the dynamics of the poorly characterized mGluR6 transduction cascade unique to ON bipolar cells, and explains the second lobe of the biphasic flash response. Complementary to the study of neural circuits, recent advances in wafer-scale photolithography have made possible new devices to measure the electrical and mechanical properties of neurons. Chapter 4 reports a novel piezoelectric sensor that facilitates the simultaneous measurement of electrical and mechanical signals in neural tissue. This technology could reveal the relationship between the electrical activity of neurons and their local mechanical environment, which is critical to the study of mechanoreceptors, neural development, and traumatic brain injury. Chapter 5 describes advances in the development, fabrication, and testing of a prototype silicon micropipette for patch clamp physiology. Nanoscale photolithography addresses some of the limitations of traditional glass patch electrodes, such as the rapid dialysis of the cell with internal solution, and provides a platform for integration of microfluidics and electronics into the device, which can enable novel experimental methodology.

Perception as a closed-loop convergence process.

PubMed

Ahissar, Ehud; Assa, Eldad

2016-05-09

Perception of external objects involves sensory acquisition via the relevant sensory organs. A widely-accepted assumption is that the sensory organ is the first station in a serial chain of processing circuits leading to an internal circuit in which a percept emerges. This open-loop scheme, in which the interaction between the sensory organ and the environment is not affected by its concurrent downstream neuronal processing, is strongly challenged by behavioral and anatomical data. We present here a hypothesis in which the perception of external objects is a closed-loop dynamical process encompassing loops that integrate the organism and its environment and converging towards organism-environment steady-states. We discuss the consistency of closed-loop perception (CLP) with empirical data and show that it can be synthesized in a robotic setup. Testable predictions are proposed for empirical distinction between open and closed loop schemes of perception.

Perception as a closed-loop convergence process

PubMed Central

Ahissar, Ehud; Assa, Eldad

2016-01-01

Perception of external objects involves sensory acquisition via the relevant sensory organs. A widely-accepted assumption is that the sensory organ is the first station in a serial chain of processing circuits leading to an internal circuit in which a percept emerges. This open-loop scheme, in which the interaction between the sensory organ and the environment is not affected by its concurrent downstream neuronal processing, is strongly challenged by behavioral and anatomical data. We present here a hypothesis in which the perception of external objects is a closed-loop dynamical process encompassing loops that integrate the organism and its environment and converging towards organism-environment steady-states. We discuss the consistency of closed-loop perception (CLP) with empirical data and show that it can be synthesized in a robotic setup. Testable predictions are proposed for empirical distinction between open and closed loop schemes of perception. DOI: http://dx.doi.org/10.7554/eLife.12830.001 PMID:27159238

Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures

NASA Astrophysics Data System (ADS)

Rotta, Davide; Sebastiano, Fabio; Charbon, Edoardo; Prati, Enrico

2017-06-01

Even the quantum simulation of an apparently simple molecule such as Fe2S2 requires a considerable number of qubits of the order of 106, while more complex molecules such as alanine (C3H7NO2) require about a hundred times more. In order to assess such a multimillion scale of identical qubits and control lines, the silicon platform seems to be one of the most indicated routes as it naturally provides, together with qubit functionalities, the capability of nanometric, serial, and industrial-quality fabrication. The scaling trend of microelectronic devices predicting that computing power would double every 2 years, known as Moore's law, according to the new slope set after the 32-nm node of 2009, suggests that the technology roadmap will achieve the 3-nm manufacturability limit proposed by Kelly around 2020. Today, circuital quantum information processing architectures are predicted to take advantage from the scalability ensured by silicon technology. However, the maximum amount of quantum information per unit surface that can be stored in silicon-based qubits and the consequent space constraints on qubit operations have never been addressed so far. This represents one of the key parameters toward the implementation of quantum error correction for fault-tolerant quantum information processing and its dependence on the features of the technology node. The maximum quantum information per unit surface virtually storable and controllable in the compact exchange-only silicon double quantum dot qubit architecture is expressed as a function of the complementary metal-oxide-semiconductor technology node, so the size scale optimizing both physical qubit operation time and quantum error correction requirements is assessed by reviewing the physical and technological constraints. According to the requirements imposed by the quantum error correction method and the constraints given by the typical strength of the exchange coupling, we determine the workable operation frequency range of a silicon complementary metal-oxide-semiconductor quantum processor to be within 1 and 100 GHz. Such constraint limits the feasibility of fault-tolerant quantum information processing with complementary metal-oxide-semiconductor technology only to the most advanced nodes. The compatibility with classical complementary metal-oxide-semiconductor control circuitry is discussed, focusing on the cryogenic complementary metal-oxide-semiconductor operation required to bring the classical controller as close as possible to the quantum processor and to enable interfacing thousands of qubits on the same chip via time-division, frequency-division, and space-division multiplexing. The operation time range prospected for cryogenic control electronics is found to be compatible with the operation time expected for qubits. By combining the forecast of the development of scaled technology nodes with operation time and classical circuitry constraints, we derive a maximum quantum information density for logical qubits of 2.8 and 4 Mqb/cm2 for the 10 and 7-nm technology nodes, respectively, for the Steane code. The density is one and two orders of magnitude less for surface codes and for concatenated codes, respectively. Such values provide a benchmark for the development of fault-tolerant quantum algorithms by circuital quantum information based on silicon platforms and a guideline for other technologies in general.

Introduction to focus issue: quantitative approaches to genetic networks.

PubMed

Albert, Réka; Collins, James J; Glass, Leon

2013-06-01

All cells of living organisms contain similar genetic instructions encoded in the organism's DNA. In any particular cell, the control of the expression of each different gene is regulated, in part, by binding of molecular complexes to specific regions of the DNA. The molecular complexes are composed of protein molecules, called transcription factors, combined with various other molecules such as hormones and drugs. Since transcription factors are coded by genes, cellular function is partially determined by genetic networks. Recent research is making large strides to understand both the structure and the function of these networks. Further, the emerging discipline of synthetic biology is engineering novel gene circuits with specific dynamic properties to advance both basic science and potential practical applications. Although there is not yet a universally accepted mathematical framework for studying the properties of genetic networks, the strong analogies between the activation and inhibition of gene expression and electric circuits suggest frameworks based on logical switching circuits. This focus issue provides a selection of papers reflecting current research directions in the quantitative analysis of genetic networks. The work extends from molecular models for the binding of proteins, to realistic detailed models of cellular metabolism. Between these extremes are simplified models in which genetic dynamics are modeled using classical methods of systems engineering, Boolean switching networks, differential equations that are continuous analogues of Boolean switching networks, and differential equations in which control is based on power law functions. The mathematical techniques are applied to study: (i) naturally occurring gene networks in living organisms including: cyanobacteria, Mycoplasma genitalium, fruit flies, immune cells in mammals; (ii) synthetic gene circuits in Escherichia coli and yeast; and (iii) electronic circuits modeling genetic networks using field-programmable gate arrays. Mathematical analyses will be essential for understanding naturally occurring genetic networks in diverse organisms and for providing a foundation for the improved development of synthetic genetic networks.

Introduction to Focus Issue: Quantitative Approaches to Genetic Networks

NASA Astrophysics Data System (ADS)

Albert, Réka; Collins, James J.; Glass, Leon

2013-06-01

All cells of living organisms contain similar genetic instructions encoded in the organism's DNA. In any particular cell, the control of the expression of each different gene is regulated, in part, by binding of molecular complexes to specific regions of the DNA. The molecular complexes are composed of protein molecules, called transcription factors, combined with various other molecules such as hormones and drugs. Since transcription factors are coded by genes, cellular function is partially determined by genetic networks. Recent research is making large strides to understand both the structure and the function of these networks. Further, the emerging discipline of synthetic biology is engineering novel gene circuits with specific dynamic properties to advance both basic science and potential practical applications. Although there is not yet a universally accepted mathematical framework for studying the properties of genetic networks, the strong analogies between the activation and inhibition of gene expression and electric circuits suggest frameworks based on logical switching circuits. This focus issue provides a selection of papers reflecting current research directions in the quantitative analysis of genetic networks. The work extends from molecular models for the binding of proteins, to realistic detailed models of cellular metabolism. Between these extremes are simplified models in which genetic dynamics are modeled using classical methods of systems engineering, Boolean switching networks, differential equations that are continuous analogues of Boolean switching networks, and differential equations in which control is based on power law functions. The mathematical techniques are applied to study: (i) naturally occurring gene networks in living organisms including: cyanobacteria, Mycoplasma genitalium, fruit flies, immune cells in mammals; (ii) synthetic gene circuits in Escherichia coli and yeast; and (iii) electronic circuits modeling genetic networks using field-programmable gate arrays. Mathematical analyses will be essential for understanding naturally occurring genetic networks in diverse organisms and for providing a foundation for the improved development of synthetic genetic networks.

Polyfluorene light-emitting devices and amorphous silicon:hydrogen TFT pixel circuits for active-matrix organic light-emitting displays

NASA Astrophysics Data System (ADS)

He, Yi

2000-10-01

Organic light-emitting devices (OLEDs) made of single-layer and double-layer polymer thin films have been fabricated and studied. The hole transporting (polymer A) and emissive (polymer B) polymers were poly(9,9' -dioctyl fluorene-2,7-diyl)-co-poly(diphenyl-p-tolyl-amine-4,4 '-diyl) and poly(9,9'-dioctyl fluorene-2,7-diyl)-co-poly(benzothiadiazole 2,5-diyl), respectively. The optical bandgaps of polymer A and B were 2.72 and 2.82 eV, respectively. The photoluminescence (PL) peaks for polymer A and B were 502 and 546 nm, respectively. The electroluminescence (EL) peak for polymer B was 547 nm. No EL has been observed from polymer A single layer OLEDs. To obtain the spectral distribution of the emission properties of the light-emitting devices, a new light-output measurement technique was developed. Using this technique, the spectral distribution of the luminance, radiance, photon density emission can be obtained. Moreover, the device external quantum efficiency calculated using this technique is accurate and insensitive to the light emission spectrum shape. Organic light-emitting devices have been fabricated and studied on both glass and flexible plastic substrates. The OLEDs showed a near-linear relationship between the luminance and the applied current density over four orders of magnitude. For the OLEDs fabricated on the glass substrate, luminance ˜9,300 cd/m2, emission efficiency ˜14.5 cd/A, luminescence power efficiency ˜2.26 lm/W, and external quantum efficiency ˜3.85% have been achieved. For the OLEDs fabricated on the flexible plastic substrates, both aluminum and calcium were used as cathode materials. The achieved maximum OLED luminance, emission efficiency, luminescence power efficiency, and external quantum efficiency were ˜13,000 cd/m2, ˜66.1 cd/A, ˜17.2 lm/W, and 16.7%, respectively. To make an active-matrix organic light-emitting display (AM-OLED), a two-TFT pixel electrode circuit was designed and fabricated based on amorphous silicon TFT technology. This circuit was capable of providing continuous pixel excitation and a simple driving scheme. However, it showed an output current variation of ˜40% to 80% due to the drive TFT threshold voltage (V th) shift after long-term operation. To improve the pixel circuit electrical reliability, a four-TFT pixel electrode circuit was proposed and fabricated. This circuit only showed an output current variation <1% for the high currents (>0.5muA) even when a TFT Vth shift as large as 3V was present. This four-TFT pixel electrode circuit was used to fabricate small size active-matrix monochrome organic light-emitting display.

Plasmonic-resonance-based ternary composite complementary enhancement of the performance of dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Bai, Lihua; Li, Meiya; Liu, Xiaolian; Luoshan, Mengdai; Zhang, Feng; Guo, Kaimo; Zhu, Yongdan; Sun, Beilei; Zhao, Xingzhong

2016-10-01

Graphene (G), TiO2 fusiform nanorods (TiO2NRs) adsorbed with Au nanoparticles (AuNPs) are prepared and blended as multifunctional materials into TiO2 nanocrystalline film to form a novel ternary (G-TiO2NRs-Au) composite photoanode in dye-sensitized solar cells (DSSCs). The effects of G-TiO2NRs-Au on the properties of the photoanode and DSSC are investigated. Results show that, by blending G-TiO2NRs-Au, the light absorption and scattering of the photoanode are obviously improved, and the charge transfer resistance R2 and electron recombination are decreased, resulting in a significant enhancement in the short-circuit current density (J sc) and the photoelectric conversion efficiency (PCE) of the DSSCs. The maximum J sc of 17.66 mA cm-2 and PCE of 8.56% are obtained in the optimal G-TiO2NRs-Au-based DSSC, about 33.6% and 35.0% higher than that obtained in the conventional TiO2-based DSSC. This significant improvement in the performance of the DSSC can be attributed to the ternary composite complementary effects of multi-functions from the surface plasmon resonance of AuNPs, light scattering of TiO2NRs, and the improved dye loading and fast electron transmission channel from graphene. This study provides an effective way of ternary composite complementary enhancement of the J sc and PCE of the DSSCs.

Facile fabrication of efficient organic CMOS circuits.

PubMed

Dzwilewski, Andrzej; Matyba, Piotr; Edman, Ludvig

2010-01-14

Organic electronic circuits based on a combination of n- and p-type transistors (so-called CMOS circuits) are attractive, since they promise the realization of a manifold of versatile and low-cost electronic devices. Here, we report a novel photoinduced transformation method, which allows for a particularly straightforward fabrication of highly functional organic CMOS circuits. A solution-deposited single-layer film, comprising a mixture of the n-type semiconductor [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) and the p-type semiconductor poly-3-hexylthiophene (P3HT) in a 3:1 mass ratio, was utilized as the common active material in an array of transistors. Selected film areas were exposed to laser light, with the result that the irradiated PCBM monomers were photochemically transformed into a low-solubility and high-mobility dimeric state. Thereafter, the entire film was developed via immersion into a developer solution, which selectively removed the nonexposed, and monomeric, PCBM component. The end result was that the transistors in the exposed film areas are n-type, as dimeric PCBM is the majority component in the active material, while the transistors in the nonexposed film areas are p-type, as P3HT is the sole remaining material. We demonstrate the merit of the method by utilizing the resulting combination of n-type and p-type transistors for the realization of CMOS inverters with a high gain of approximately 35.

Stretchable Transparent Electrode Arrays for Simultaneous Electrical and Optical Interrogation of Neural Circuits in Vivo.

PubMed

Zhang, Jing; Liu, Xiaojun; Xu, Wenjing; Luo, Wenhan; Li, Ming; Chu, Fangbing; Xu, Lu; Cao, Anyuan; Guan, Jisong; Tang, Shiming; Duan, Xiaojie

2018-05-09

Recent developments of transparent electrode arrays provide a unique capability for simultaneous optical and electrical interrogation of neural circuits in the brain. However, none of these electrode arrays possess the stretchability highly desired for interfacing with mechanically active neural systems, such as the brain under injury, the spinal cord, and the peripheral nervous system (PNS). Here, we report a stretchable transparent electrode array from carbon nanotube (CNT) web-like thin films that retains excellent electrochemical performance and broad-band optical transparency under stretching and is highly durable under cyclic stretching deformation. We show that the CNT electrodes record well-defined neuronal response signals with negligible light-induced artifacts from cortical surfaces under optogenetic stimulation. Simultaneous two-photon calcium imaging through the transparent CNT electrodes from cortical surfaces of GCaMP-expressing mice with epilepsy shows individual activated neurons in brain regions from which the concurrent electrical recording is taken, thus providing complementary cellular information in addition to the high-temporal-resolution electrical recording. Notably, the studies on rats show that the CNT electrodes remain operational during and after brain contusion that involves the rapid deformation of both the electrode array and brain tissue. This enables real-time, continuous electrophysiological monitoring of cortical activity under traumatic brain injury. These results highlight the potential application of the stretchable transparent CNT electrode arrays in combining electrical and optical modalities to study neural circuits, especially under mechanically active conditions, which could potentially provide important new insights into the local circuit dynamics of the spinal cord and PNS as well as the mechanism underlying traumatic injuries of the nervous system.

A miniature electronic nose system based on an MWNT-polymer microsensor array and a low-power signal-processing chip.

PubMed

Chiu, Shih-Wen; Wu, Hsiang-Chiu; Chou, Ting-I; Chen, Hsin; Tang, Kea-Tiong

2014-06-01

This article introduces a power-efficient, miniature electronic nose (e-nose) system. The e-nose system primarily comprises two self-developed chips, a multiple-walled carbon nanotube (MWNT)-polymer based microsensor array, and a low-power signal-processing chip. The microsensor array was fabricated on a silicon wafer by using standard photolithography technology. The microsensor array comprised eight interdigitated electrodes surrounded by SU-8 "walls," which restrained the material-solvent liquid in a defined area of 650 × 760 μm(2). To achieve a reliable sensor-manufacturing process, we used a two-layer deposition method, coating the MWNTs and polymer film as the first and second layers, respectively. The low-power signal-processing chip included array data acquisition circuits and a signal-processing core. The MWNT-polymer microsensor array can directly connect with array data acquisition circuits, which comprise sensor interface circuitry and an analog-to-digital converter; the signal-processing core consists of memory and a microprocessor. The core executes the program, classifying the odor data received from the array data acquisition circuits. The low-power signal-processing chip was designed and fabricated using the Taiwan Semiconductor Manufacturing Company 0.18-μm 1P6M standard complementary metal oxide semiconductor process. The chip consumes only 1.05 mW of power at supply voltages of 1 and 1.8 V for the array data acquisition circuits and the signal-processing core, respectively. The miniature e-nose system, which used a microsensor array, a low-power signal-processing chip, and an embedded k-nearest-neighbor-based pattern recognition algorithm, was developed as a prototype that successfully recognized the complex odors of tincture, sorghum wine, sake, whisky, and vodka.

[Research progress of mammalian synthetic biology in biomedical field].

PubMed

Yang, Linfeng; Yin, Jianli; Wang, Meiyan; Ye, Haifeng

2017-03-25

Although still in its infant stage, synthetic biology has achieved remarkable development and progress during the past decade. Synthetic biology applies engineering principles to design and construct gene circuits uploaded into living cells or organisms to perform novel or improved functions, and it has been widely used in many fields. In this review, we describe the recent advances of mammalian synthetic biology for the treatment of diseases. We introduce common tools and design principles of synthetic gene circuits, and then we demonstrate open-loop gene circuits induced by different trigger molecules used in disease diagnosis and close-loop gene circuits used for biomedical applications. Finally, we discuss the perspectives and potential challenges of synthetic biology for clinical applications.