Megahertz organic/polymer diodes

DOEpatents

Katz, Howard Edan; Sun, Jia; Pal, Nath Bhola

2012-12-11

Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akselrod, Gleb M.; Bawendi, Moungi G.; Bulovic, Vladimir

Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.

Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors

PubMed Central

Jin Lee, Su; Kim, Yong-Jae; Young Yeo, So; Lee, Eunji; Sun Lim, Ho; Kim, Min; Song, Yong-Won; Cho, Jinhan; Ah Lim, Jung

2015-01-01

Here we report the first demonstration for centro-apical self-organization of organic semiconductors in a line-printed organic semiconductor: polymer blend. Key feature of this work is that organic semiconductor molecules were vertically segregated on top of the polymer phase and simultaneously crystallized at the center of the printed line pattern after solvent evaporation without an additive process. The thickness and width of the centro-apically segregated organic semiconductor crystalline stripe in the printed blend pattern were controlled by varying the relative content of the organic semiconductors, printing speed, and solution concentrations. The centro-apical self-organization of organic semiconductor molecules in a printed polymer blend may be attributed to the combination of an energetically favorable vertical phase-separation and hydrodynamic fluids inside the droplet during solvent evaporation. Finally, a centro-apically phase-separated bilayer structure of organic semiconductor: polymer blend was successfully demonstrated as a facile method to form the semiconductor and dielectric layer for OFETs in one- step. PMID:26359068

Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors.

PubMed

Lee, Su Jin; Kim, Yong-Jae; Yeo, So Young; Lee, Eunji; Lim, Ho Sun; Kim, Min; Song, Yong-Won; Cho, Jinhan; Lim, Jung Ah

2015-09-11

Here we report the first demonstration for centro-apical self-organization of organic semiconductors in a line-printed organic semiconductor: polymer blend. Key feature of this work is that organic semiconductor molecules were vertically segregated on top of the polymer phase and simultaneously crystallized at the center of the printed line pattern after solvent evaporation without an additive process. The thickness and width of the centro-apically segregated organic semiconductor crystalline stripe in the printed blend pattern were controlled by varying the relative content of the organic semiconductors, printing speed, and solution concentrations. The centro-apical self-organization of organic semiconductor molecules in a printed polymer blend may be attributed to the combination of an energetically favorable vertical phase-separation and hydrodynamic fluids inside the droplet during solvent evaporation. Finally, a centro-apically phase-separated bilayer structure of organic semiconductor: polymer blend was successfully demonstrated as a facile method to form the semiconductor and dielectric layer for OFETs in one- step.

Surface and Interface Engineering of Organometallic and Two Dimensional Semiconductor

NASA Astrophysics Data System (ADS)

Park, Jun Hong

For over half a century, inorganic Si and III-V materials have led the modern semiconductor industry, expanding to logic transistor and optoelectronic applications. However, these inorganic materials have faced two different fundamental limitations, flexibility for wearable applications and scaling limitation as logic transistors. As a result, the organic and two dimensional have been studied intentionally for various fields. In the present dissertation, three different studies will be presented with followed order; (1) the chemical response of organic semiconductor in NO2 exposure. (2) The surface and stability of WSe2 in ambient air. (3) Deposition of dielectric on two dimensional materials using organometallic seeding layer. The organic molecules rely on the van der Waals interaction during growth of thin films, contrast to covalent bond inorganic semiconductors. Therefore, the morphology and electronic property at surface of organic semiconductor in micro scale is more sensitive to change in gaseous conditions. In addition, metal phthalocyanine, which is one of organic semiconductor materials, change their electronic property as reaction with gaseous analytes, suggesting as potential chemical sensing platforms. In the present part, the growth behavior of metal phthalocyanine and surface response to gaseous condition will be elucidated using scanning tunneling microscopy (STM). In second part, the surface of layered transition metal dichalcogenides and their chemical response to exposure ambient air will be investigated, using STM. Layered transition metal dichalcogenides (TMDs) have attracted widespread attention in the scientific community for electronic device applications because improved electrostatic gate control and suppression of short channel leakage resulted from their atomic thin body. To fabricate the transistor based on TMDs, TMDs should be exposed to ambient conditions, while the effect of air exposure has not been understood fully. In this part, the effect of ambient air on TMDs will be investigated and partial oxidation of TMDs. In the last part, uniform deposition of dielectric layers on 2D materials will be presented, employing organic seedling layer. Although 2D materials have been expected as next generation semiconductor platform, direct deposition of dielectric is still challenging and induces leakage current commonly, because inertness of their surface resulted from absent of dangling bond. Here, metal phthalocyanine monolayer (ML) is employed as seedling layers and the growth of atomic layer deposition (ALD) dielectric is investigated in each step using STM.

Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps

PubMed Central

Mei, Yaochuan; Diemer, Peter J.; Niazi, Muhammad R.; Hallani, Rawad K.; Jarolimek, Karol; Day, Cynthia S.; Risko, Chad; Anthony, John E.; Amassian, Aram

2017-01-01

The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms. PMID:28739934

Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps.

PubMed

Mei, Yaochuan; Diemer, Peter J; Niazi, Muhammad R; Hallani, Rawad K; Jarolimek, Karol; Day, Cynthia S; Risko, Chad; Anthony, John E; Amassian, Aram; Jurchescu, Oana D

2017-08-15

The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms.

Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends.

PubMed

Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

2016-08-02

Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed.

Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends

PubMed Central

Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

2016-01-01

Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed. PMID:28773772

Estimation of carrier mobility and charge behaviors of organic semiconductor films in metal-insulator-semiconductor diodes consisting of high-k oxide/organic semiconductor double layers

NASA Astrophysics Data System (ADS)

Chosei, Naoya; Itoh, Eiji

2018-02-01

We have comparatively studied the charge behaviors of organic semiconductor films based on charge extraction by linearly increasing voltage in a metal-insulator-semiconductor (MIS) diode structure (MIS-CELIV) and by classical capacitance-voltage measurement. The MIS-CELIV technique allows the selective measurement of electron and hole mobilities of n- and p-type organic films with thicknesses representative of those of actual devices. We used an anodic oxidized sputtered Ta or Hf electrode as a high-k layer, and it effectively blocked holes at the insulator/semiconductor interface. We estimated the hole mobilities of the polythiophene derivatives regioregular poly(3-hexylthiophene) (P3HT) and poly(3,3‧‧‧-didodecylquarterthiophene) (PQT-12) before and after heat treatment in the ITO/high-k/(thin polymer insulator)/semiconductor/MoO3/Ag device structure. The hole mobility of PQT-12 was improved from 1.1 × 10-5 to 2.1 × 10-5 cm2 V-1 s-1 by the heat treatment of the device at 100 °C for 30 min. An almost two orders of magnitude higher mobility was obtained in MIS diodes with P3HT as the p-type layer. We also determined the capacitance from the displacement current in MIS diodes at a relatively low-voltage sweep, and it corresponded well to the classical capacitance-voltage and frequency measurement results.

Long-range coupling of electron-hole pairs in spatially separated organic donor-acceptor layers

PubMed Central

Nakanotani, Hajime; Furukawa, Taro; Morimoto, Kei; Adachi, Chihaya

2016-01-01

Understanding exciton behavior in organic semiconductor molecules is crucial for the development of organic semiconductor-based excitonic devices such as organic light-emitting diodes and organic solar cells, and the tightly bound electron-hole pair forming an exciton is normally assumed to be localized on an organic semiconducting molecule. We report the observation of long-range coupling of electron-hole pairs in spatially separated electron-donating and electron-accepting molecules across a 10-nanometers-thick spacer layer. We found that the exciton energy can be tuned over 100 megaelectron volts and the fraction of delayed fluorescence can be increased by adjusting the spacer-layer thickness. Furthermore, increasing the spacer-layer thickness produced an organic light-emitting diode with an electroluminescence efficiency nearly eight times higher than that of a device without a spacer layer. Our results demonstrate the first example of a long-range coupled charge-transfer state between electron-donating and electron-accepting molecules in a working device. PMID:26933691

Charge transfer at organic-inorganic interfaces—Indoline layers on semiconductor substrates

NASA Astrophysics Data System (ADS)

Meyenburg, I.; Falgenhauer, J.; Rosemann, N. W.; Chatterjee, S.; Schlettwein, D.; Heimbrodt, W.

2016-12-01

We studied the electron transfer from excitons in adsorbed indoline dye layers across the organic-inorganic interface. The hybrids consist of indoline derivatives on the one hand and different inorganic substrates (TiO2, ZnO, SiO2(0001), fused silica) on the other. We reveal the electron transfer times from excitons in dye layers to the organic-inorganic interface by analyzing the photoluminescence transients of the dye layers after femtosecond excitation and applying kinetic model calculations. A correlation between the transfer times and four parameters have been found: (i) the number of anchoring groups, (ii) the distance between the dye and the organic-inorganic interface, which was varied by the alkyl-chain lengths between the carboxylate anchoring group and the dye, (iii) the thickness of the adsorbed dye layer, and (iv) the level alignment between the excited dye ( π* -level) and the conduction band minimum of the inorganic semiconductor.

Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

PubMed

Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

2016-02-10

Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

Photoelectrical Stimulation of Neuronal Cells by an Organic Semiconductor-Electrolyte Interface.

PubMed

Abdullaeva, Oliya S; Schulz, Matthias; Balzer, Frank; Parisi, Jürgen; Lützen, Arne; Dedek, Karin; Schiek, Manuela

2016-08-23

As a step toward the realization of neuroprosthetics for vision restoration, we follow an electrophysiological patch-clamp approach to study the fundamental photoelectrical stimulation mechanism of neuronal model cells by an organic semiconductor-electrolyte interface. Our photoactive layer consisting of an anilino-squaraine donor blended with a fullerene acceptor is supporting the growth of the neuronal model cell line (N2A cells) without an adhesion layer on it and is not impairing cell viability. The transient photocurrent signal upon illumination from the semiconductor-electrolyte layer is able to trigger a passive response of the neuronal cells under physiological conditions via a capacitive coupling mechanism. We study the dynamics of the capacitive transmembrane currents by patch-clamp recordings and compare them to the dynamics of the photocurrent signal and its spectral responsivity. Furthermore, we characterize the morphology of the semiconductor-electrolyte interface by atomic force microscopy and study the stability of the interface in dark and under illuminated conditions.

Lead Halide Perovskites as Charge Generation Layers for Electron Mobility Measurement in Organic Semiconductors.

PubMed

Love, John A; Feuerstein, Markus; Wolff, Christian M; Facchetti, Antonio; Neher, Dieter

2017-12-06

Hybrid lead halide perovskites are introduced as charge generation layers (CGLs) for the accurate determination of electron mobilities in thin organic semiconductors. Such hybrid perovskites have become a widely studied photovoltaic material in their own right, for their high efficiencies, ease of processing from solution, strong absorption, and efficient photogeneration of charge. Time-of-flight (ToF) measurements on bilayer samples consisting of the perovskite CGL and an organic semiconductor layer of different thickness are shown to be determined by the carrier motion through the organic material, consistent with the much higher charge carrier mobility in the perovskite. Together with the efficient photon-to-electron conversion in the perovskite, this high mobility imbalance enables electron-only mobility measurement on relatively thin application-relevant organic films, which would not be possible with traditional ToF measurements. This architecture enables electron-selective mobility measurements in single components as well as bulk-heterojunction films as demonstrated in the prototypical polymer/fullerene blends. To further demonstrate the potential of this approach, electron mobilities were measured as a function of electric field and temperature in an only 127 nm thick layer of a prototypical electron-transporting perylene diimide-based polymer, and found to be consistent with an exponential trap distribution of ca. 60 meV. Our study furthermore highlights the importance of high mobility charge transporting layers when designing perovskite solar cells.

Organic solar cells with graded absorber layers processed from nanoparticle dispersions.

PubMed

Gärtner, Stefan; Reich, Stefan; Bruns, Michael; Czolk, Jens; Colsmann, Alexander

2016-03-28

The fabrication of organic solar cells with advanced multi-layer architectures from solution is often limited by the choice of solvents since most organic semiconductors dissolve in the same aromatic agents. In this work, we investigate multi-pass deposition of organic semiconductors from eco-friendly ethanol dispersion. Once applied, the nanoparticles are insoluble in the deposition agent, allowing for the application of further nanoparticulate layers and hence for building poly(3-hexylthiophene-2,5-diyl):indene-C60 bisadduct absorber layers with vertically graded polymer and conversely graded fullerene concentration. Upon thermal annealing, we observe some degrees of polymer/fullerene interdiffusion by means of X-ray photoelectron spectroscopy and Kelvin probe force microscopy. Replacing the common bulk-heterojunction by such a graded photo-active layer yields an enhanced fill factor of the solar cell due to an improved charge carrier extraction, and consequently an overall power conversion efficiency beyond 4%. Wet processing of such advanced device architectures paves the way for a versatile, eco-friendly and industrially feasible future fabrication of organic solar cells with advanced multi-layer architectures.

Enhancing surface plasmon leakage at the metal/semiconductor interface: towards increased light outcoupling efficiency in organic optoelectronics.

PubMed

Kohl, Jesse; Pantina, Joseph A; O'Carroll, Deirdre M

2014-04-07

The light outcoupling efficiency of organic light-emitting optoelectronic devices is severely limited by excitation of tightly bound surface plasmon polaritons at the metal electrodes. We present a theoretical study of an organic semiconductor-silver-SiO(2) waveguide and demonstrate that by simple tuning of metal film thickness and the emission regime of the organic semiconductor, a significant fraction of surface plasmon polariton mode amplitude is leaked into the active semiconductor layer, thereby decreasing the amount of optical energy trapped by the metal. At visible wavelengths, mode leakage increases by factors of up to 3.8 and 88 by tuning metal film thickness and by addition of gain, respectively.

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.

PubMed

Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

2015-06-30

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

Tunable molecular orientation and elevated thermal stability of vapor-deposited organic semiconductors

PubMed Central

Walters, Diane M.; Lyubimov, Ivan; de Pablo, Juan J.; Ediger, M. D.

2015-01-01

Physical vapor deposition is commonly used to prepare organic glasses that serve as the active layers in light-emitting diodes, photovoltaics, and other devices. Recent work has shown that orienting the molecules in such organic semiconductors can significantly enhance device performance. We apply a high-throughput characterization scheme to investigate the effect of the substrate temperature (Tsubstrate) on glasses of three organic molecules used as semiconductors. The optical and material properties are evaluated with spectroscopic ellipsometry. We find that molecular orientation in these glasses is continuously tunable and controlled by Tsubstrate/Tg, where Tg is the glass transition temperature. All three molecules can produce highly anisotropic glasses; the dependence of molecular orientation upon substrate temperature is remarkably similar and nearly independent of molecular length. All three compounds form “stable glasses” with high density and thermal stability, and have properties similar to stable glasses prepared from model glass formers. Simulations reproduce the experimental trends and explain molecular orientation in the deposited glasses in terms of the surface properties of the equilibrium liquid. By showing that organic semiconductors form stable glasses, these results provide an avenue for systematic performance optimization of active layers in organic electronics. PMID:25831545

Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

PubMed Central

Matsushima, Toshinori; Sandanayaka, Atula S. D.; Esaki, Yu; Adachi, Chihaya

2015-01-01

We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10–2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost. PMID:26416434

Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors.

PubMed

Matsushima, Toshinori; Sandanayaka, Atula S D; Esaki, Yu; Adachi, Chihaya

2015-09-29

We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10(-2) cm(2)/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm(2)/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost.

Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

NASA Astrophysics Data System (ADS)

Matsushima, Toshinori; Sandanayaka, Atula S. D.; Esaki, Yu; Adachi, Chihaya

2015-09-01

We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10-2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost.

Hybrid organic semiconductor lasers for bio-molecular sensing.

PubMed

Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

2014-01-01

Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

Flat-lying semiconductor-insulator interfacial layer in DNTT thin films.

PubMed

Jung, Min-Cherl; Leyden, Matthew R; Nikiforov, Gueorgui O; Lee, Michael V; Lee, Han-Koo; Shin, Tae Joo; Takimiya, Kazuo; Qi, Yabing

2015-01-28

The molecular order of organic semiconductors at the gate dielectric is the most critical factor determining carrier mobility in thin film transistors since the conducting channel forms at the dielectric interface. Despite its fundamental importance, this semiconductor-insulator interface is not well understood, primarily because it is buried within the device. We fabricated dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) thin film transistors by thermal evaporation in vacuum onto substrates held at different temperatures and systematically correlated the extracted charge mobility to the crystal grain size and crystal orientation. As a result, we identify a molecular layer of flat-lying DNTT molecules at the semiconductor-insulator interface. It is likely that such a layer might form in other material systems as well, and could be one of the factors reducing charge transport. Controlling this interfacial flat-lying layer may raise the ultimate possible device performance for thin film devices.

Diode and method of making the same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dickerson, Jeramy Ray; Wierer, Jr., Jonathan; Kaplar, Robert

2018-03-13

A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.

Spin-dependent transport phenomena in organic semiconductors

NASA Astrophysics Data System (ADS)

Bergeson, Jeremy D.

Thin-film organic semiconductors transport can have an anomalously high sensitivity to low magnetic fields. Such a response is unexpected considering that thermal fluctuation energies are greater than the energy associated with the intrinsic spin of charge carriers at a modest magnetic field of 100 Oe by a factor of more than 104 at room temperature and is still greater by 102 even at liquid helium temperatures. Nevertheless, we report experimental characterization of (1) spin-dependent injection, detection and transport of spin-polarized current through organic semiconductors and (2) the influence of a magnetic field on the spin dynamics of recombination-limited transport. The first focus of this work was accomplished by fabricating basic spin-valve devices consisting of two magnetic layers spatially separated by a nonmagnetic organic semiconductor. The spin-valve effect is a change in electrical resistance due to the magnetizations of the magnetic layers changing from parallel to antiparallel alignment, or vice versa. The conductivities of the metallic contacts and that of the semiconductor differed by many orders of magnitude, which inhibited the injection of a spin-polarized current from the magnet into the nonmagnet. We successfully overcame the problem of conductivity mismatch by inserting ultra-thin tunnel barriers at the metal/semiconductor interfaces which aided in yielding a ˜20% spin-valve effect at liquid helium temperatures and the effect persisted up to 150 K. We built on this achievement by constructing spin valves where one of the metallic contacts was replaced by the organic-based magnetic semiconductor vanadium tetracyanoethylene (V[TCNE]2). At 10 K these devices produced the switching behavior of the spin-valve effect. The second focus of this work was the bulk magnetoresistance (MR) of small molecule, oligomer and polymer organic semiconductors in thin-film structures. At room temperature the resistance can change up to 8% at 100 Oe and 15% at 1000 Oe. Depending on parameters such as temperature, layer thickness, or applied voltage, the resistance of these materials may increase or decrease as a function of field. A model for this phenomenon, termed magnetoresistance by the interconversion of singlets and triplets (MIST), is developed to account for this anomalous behavior. This model predicts that increasing the spin-orbit coupling in the organic semiconductor should decrease the magnitude of the MR. In an experiment where the small molecule Alq3 was doped with phosphorescent sensitizers, to increase the spin-orbit coupling, the MR was observed to decrease by an order of magnitude or more, depending on the doping. In addition to low-magnetic-field effects, we show the experimental observation of high-field MR in devices with and without magnetic contacts. To the best of our knowledge, we are the first to report (1) a tunnel-barrier-assisted spin-valve effect into an organic semiconductor using partially polarized metallic magnetic electrodes and (2) an experimental characterization of the central impact of the hyperfine interaction and spin-orbit coupling on MR in organic semiconductors.

Organic semiconductor growth and morphology considerations for organic thin-film transistors.

PubMed

Virkar, Ajay A; Mannsfeld, Stefan; Bao, Zhenan; Stingelin, Natalie

2010-09-08

Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystallinity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small-molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self-assembled mono-layers and their effect on organic-semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al).([¹]) The second part of the Review focuses on polymeric semiconductors. The dependence of physico-chemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macromolecules, are described.

Tunable molecular orientation and elevated thermal stability of vapor-deposited organic semiconductors

DOE PAGES

Dalal, Shakeel S.; Walters, Diane M.; Lyubimov, Ivan; ...

2015-03-23

Physical vapor deposition is commonly used to prepare organic glasses that serve as the active layers in light-emitting diodes, photovoltaics, and other devices. Recent work has shown that orienting the molecules in such organic semiconductors can significantly enhance device performance. In this paper, we apply a high-throughput characterization scheme to investigate the effect of the substrate temperature (T substrate) on glasses of three organic molecules used as semiconductors. The optical and material properties are evaluated with spectroscopic ellipsometry. We find that molecular orientation in these glasses is continuously tunable and controlled by T substrate/T g, where T g is themore » glass transition temperature. All three molecules can produce highly anisotropic glasses; the dependence of molecular orientation upon substrate temperature is remarkably similar and nearly independent of molecular length. All three compounds form “stable glasses” with high density and thermal stability, and have properties similar to stable glasses prepared from model glass formers. Simulations reproduce the experimental trends and explain molecular orientation in the deposited glasses in terms of the surface properties of the equilibrium liquid. Finally, by showing that organic semiconductors form stable glasses, these results provide an avenue for systematic performance optimization of active layers in organic electronics.« less

Conductors and semiconductors for advanced organic electronics

NASA Astrophysics Data System (ADS)

Meyer-Friedrichsen, Timo; Elschner, Andreas; Keohan, Frank; Lövenich, Wilfried; Ponomarenko, Sergei A.

2009-08-01

The development of suitable materials for organic electronics is still one of the key points to access new application areas with this promising technology. Semiconductors based on thiophene chemistry show very high charge carrier mobilities. The functionalization with linker groups provided materials that built monomolecular layers of the semiconductors on the hydrolyzed oxide surface of a silicon-wafer. This approach lead to self-assembled mono-layer field-effect transistors (SAM-FETs) with mobilities of up to 0.04 cm2/Vs, which is comparable to the values of the respective bulk thin film. Transparent inorganic conductors like ITO are highly conductive but the costly processing and the brittleness hamper their use in cost-sensitive and/or flexible devices. Highly conductive PEDOT-grades have been developed with conductivities of up to 1000 S/cm which are easily applicable by printing techniques and can be used as ITO replacement in devices such as touch panels or organic photovoltaics.

Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates.

PubMed

Janneck, Robby; Pilet, Nicolas; Bommanaboyena, Satya Prakash; Watts, Benjamin; Heremans, Paul; Genoe, Jan; Rolin, Cedric

2017-11-01

Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step method for organic semiconductor layers combining a solution-processed templating layer and a lateral homo-epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus-guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high-performance, large-area electronics based on highly crystalline thin films of organic semiconductors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical in-situ characterisation of interface stabilised organic thin-film transistors

PubMed Central

Striedinger, Bernd; Fian, Alexander; Petritz, Andreas; Lassnig, Roman; Winkler, Adolf; Stadlober, Barbara

2015-01-01

We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO2 with an optional polymer interface stabilisation layer serves as the gate dielectric and pentacene is chosen as the organic semiconductor. The evolution of transistor parameters is studied on a bi-layer dielectric of a 150 nm of SiO2 and 20 nm of poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) and compared to the behaviour on a pure SiO2 dielectric. The thin layer of PNDPE, which is an intrinsically photo-patternable organic dielectric, shows an excellent stabilisation performance, significantly reducing the calculated interface trap density at the OSC/dielectric interface up to two orders of magnitude, and thus remarkably improving the transistor performance. PMID:26457122

Rational In Silico Design of an Organic Semiconductor with Improved Electron Mobility.

PubMed

Friederich, Pascal; Gómez, Verónica; Sprau, Christian; Meded, Velimir; Strunk, Timo; Jenne, Michael; Magri, Andrea; Symalla, Franz; Colsmann, Alexander; Ruben, Mario; Wenzel, Wolfgang

2017-11-01

Organic semiconductors find a wide range of applications, such as in organic light emitting diodes, organic solar cells, and organic field effect transistors. One of their most striking disadvantages in comparison to crystalline inorganic semiconductors is their low charge-carrier mobility, which manifests itself in major device constraints such as limited photoactive layer thicknesses. Trial-and-error attempts to increase charge-carrier mobility are impeded by the complex interplay of the molecular and electronic structure of the material with its morphology. Here, the viability of a multiscale simulation approach to rationally design materials with improved electron mobility is demonstrated. Starting from one of the most widely used electron conducting materials (Alq 3 ), novel organic semiconductors with tailored electronic properties are designed for which an improvement of the electron mobility by three orders of magnitude is predicted and experimentally confirmed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Interface Structure of MoO3 on Organic Semiconductors

PubMed Central

White, Robin T.; Thibau, Emmanuel S.; Lu, Zheng-Hong

2016-01-01

We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO3 on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are used to measure the evolution of the physical, chemical and electronic structure of the interfaces at various stages of MoO3 deposition on these organic semiconductor surfaces. For the interface physical structure, it is found that MoO3 diffuses into the underlying organic layer, exhibiting a trend of increasing diffusion with decreasing molecular molar mass. For the interface chemical structure, new carbon and molybdenum core-level states are observed, as a result of interfacial electron transfer from organic semiconductor to MoO3. For the interface electronic structure, energy level alignment is observed in agreement with the universal energy level alignment rule of molecules on metal oxides, despite deposition order inversion. PMID:26880185

Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors

NASA Astrophysics Data System (ADS)

Lin, Xin; Wegner, Berthold; Lee, Kyung Min; Fusella, Michael A.; Zhang, Fengyu; Moudgil, Karttikay; Rand, Barry P.; Barlow, Stephen; Marder, Seth R.; Koch, Norbert; Kahn, Antoine

2017-12-01

Chemical doping of organic semiconductors using molecular dopants plays a key role in the fabrication of efficient organic electronic devices. Although a variety of stable molecular p-dopants have been developed and successfully deployed in devices in the past decade, air-stable molecular n-dopants suitable for materials with low electron affinity are still elusive. Here we demonstrate that photo-activation of a cleavable air-stable dimeric dopant can result in kinetically stable and efficient n-doping of host semiconductors, whose reduction potentials are beyond the thermodynamic reach of the dimer’s effective reducing strength. Electron-transport layers doped in this manner are used to fabricate high-efficiency organic light-emitting diodes. Our strategy thus enables a new paradigm for using air-stable molecular dopants to improve conductivity in, and provide ohmic contacts to, organic semiconductors with very low electron affinity.

Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

NASA Astrophysics Data System (ADS)

Yoon, Myung-Han

Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on six different bilayer dielectrics consisting of various spin-coated polymers/HMDS on 300 nm SiO2/p+-Si, followed by transistor fabrication. In case of air-sensitive n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters while film morphologies and microstructures remain unchanged. In contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by dielectric surface modifications. The origin of the mobility sensitivity to the various surface chemistries in the case of air sensitive n-type semiconductors is found to be due to electron trapping by silanol and carbonyl functionalities at the semiconductor-dielectric interface.

Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit.

PubMed

Zhang, Yuhan; Qiao, Jingsi; Gao, Si; Hu, Fengrui; He, Daowei; Wu, Bing; Yang, Ziyi; Xu, Bingchen; Li, Yun; Shi, Yi; Ji, Wei; Wang, Peng; Wang, Xiaoyong; Xiao, Min; Xu, Hangxun; Xu, Jian-Bin; Wang, Xinran

2016-01-08

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3  nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit

NASA Astrophysics Data System (ADS)

Zhang, Yuhan; Qiao, Jingsi; Gao, Si; Hu, Fengrui; He, Daowei; Wu, Bing; Yang, Ziyi; Xu, Bingchen; Li, Yun; Shi, Yi; Ji, Wei; Wang, Peng; Wang, Xiaoyong; Xiao, Min; Xu, Hangxun; Xu, Jian-Bin; Wang, Xinran

2016-01-01

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ˜3 nm . Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectric.

PubMed

Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

2014-02-28

Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene-graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene-graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm(2) V(-1) s(-1) and a threshold voltage of -0.7 V at V(gs) = -40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm(2) V(-1) s(-1) and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yafyasov, A. M., E-mail: yafyasov@gmail.com; Bogevolnov, V. B.; Ryumtsev, E. I.

A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (N{sub ss}) at the interface. A system with N{sub ss} ≈ 5 × 10{sup 10} cm{sup –2} is obtained for the example of n-Ge and the physical characteristics of the interface are measured for this system with liquid and metal field electrodes. For a system with an organic insulator, the range of variation of the surface potential from enrichment of the space-charge region of the semiconductor to the inversion state is first obtained without changing the mechanism of interaction between the adsorbedmore » layer and the semiconductor surface. The effect of enhanced polarization of the space-charge region of the semiconductor occurs due to a change in the spatial structure of mobile charge in the organic dielectric layer. The system developed in the study opens up technological opportunities for the formation of a new generation of electronic devices based on organic film structures and for experimental modeling of the electronic properties of biological membranes.« less

On Practical Charge Injection at the Metal/Organic Semiconductor Interface

PubMed Central

Kumatani, Akichika; Li, Yun; Darmawan, Peter; Minari, Takeo; Tsukagoshi, Kazuhito

2013-01-01

We have revealed practical charge injection at metal and organic semiconductor interface in organic field effect transistor configurations. We have developed a facile interface structure that consisted of double-layer electrodes in order to investigate the efficiency through contact metal dependence. The metal interlayer with few nanometers thickness between electrode and organic semiconductor drastically reduces the contact resistance at the interface. The improvement has clearly obtained when the interlayer is a metal with lower standard electrode potential of contact metals than large work function of the contact metals. The electrode potential also implies that the most dominant effect on the mechanism at the contact interface is induced by charge transfer. This mechanism represents a step forward towards understanding the fundamental physics of intrinsic charge injection in all organic devices. PMID:23293741

Effect of temperature on series resistance of organic/inorganic semiconductor junction diode

NASA Astrophysics Data System (ADS)

Tripathi, Udbhav; Kaur, Ramneek; Bharti, Shivani

2016-05-01

The paper reports the fabrication and characterization of CuPc/n-Si organic/inorganic semiconductor diode. Copper phthalocyanine, a p-type organic semiconductor layer has been deposited on Si substrate by thermal evaporation technique. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Temperature dependence of the schottky diode parameters has been studied and discussed in the temperature range, 303 K to 353 K. Series resistance of the diode has been determined using Cheung's function method. Series resistance decreases with increase in temperature. The large value of series resistance at low temperature has been explained on the basis of barrier inhomogeneities in the diode.

Semiconductor structure and recess formation etch technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching processmore » stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.« less

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

NASA Astrophysics Data System (ADS)

Held, Martin; Schießl, Stefan P.; Miehler, Dominik; Gannott, Florentina; Zaumseil, Jana

2015-08-01

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfOx) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100-300 nF/cm2) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfOx dielectrics.

Method of making photovoltaic cell

DOEpatents

Cruz-Campa, Jose Luis; Zhou, Xiaowang; Zubia, David

2017-06-20

A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

Optically switched graphene/4H-SiC junction bipolar transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chandrashekhar, MVS; Sudarshan, Tangali S.; Omar, Sabih U.

A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on amore » first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.« less

SiGe derivatization by spontaneous reduction of aryl diazonium salts

NASA Astrophysics Data System (ADS)

Girard, A.; Geneste, F.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.

2013-10-01

Germanium semiconductors have interesting properties for FET-based biosensor applications since they possess high surface roughness allowing the immobilization of a high amount of receptors on a small surface area. Since SiGe combined low cost of Si and intrinsic properties of Ge with high mobility carriers, we focused the study on this particularly interesting material. The comparison of the efficiency of a functionalization process involving the spontaneous reduction of diazonium salts is studied on Si(1 0 0), SiGe and Ge semiconductors. XPS analysis of the functionalized surfaces reveals the presence of a covalent grafted layer on all the substrates that was confirmed by AFM. Interestingly, the modified Ge derivatives have still higher surface roughness after derivatization. To support the estimated thickness by XPS, a step measurement of the organic layers is done by AFM or by profilometer technique after a O2 plasma etching of the functionalized layer. This original method is well-adapted to measure the thickness of thin organic films on rough substrates such as germanium. The analyses show a higher chemical grafting on SiGe substrates compared with Si and Ge semiconductors.

Photovoltaic cell with nano-patterned substrate

DOEpatents

Cruz-Campa, Jose Luis; Zhou, Xiaowang; Zubia, David

2016-10-18

A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

Fully Solution-Processed Flexible Organic Thin Film Transistor Arrays with High Mobility and Exceptional Uniformity

PubMed Central

Fukuda, Kenjiro; Takeda, Yasunori; Mizukami, Makoto; Kumaki, Daisuke; Tokito, Shizuo

2014-01-01

Printing fully solution-processed organic electronic devices may potentially revolutionize production of flexible electronics for various applications. However, difficulties in forming thin, flat, uniform films through printing techniques have been responsible for poor device performance and low yields. Here, we report on fully solution-processed organic thin-film transistor (TFT) arrays with greatly improved performance and yields, achieved by layering solution-processable materials such as silver nanoparticle inks, organic semiconductors, and insulating polymers on thin plastic films. A treatment layer improves carrier injection between the source/drain electrodes and the semiconducting layer and dramatically reduces contact resistance. Furthermore, an organic semiconductor with large-crystal grains results in TFT devices with shorter channel lengths and higher field-effect mobilities. We obtained mobilities of over 1.2 cm2 V−1 s−1 in TFT devices with channel lengths shorter than 20 μm. By combining these fabrication techniques, we built highly uniform organic TFT arrays with average mobility levels as high as 0.80 cm2 V−1 s−1 and ideal threshold voltages of 0 V. These results represent major progress in the fabrication of fully solution-processed organic TFT device arrays. PMID:24492785

Nanoparticle Solutions for Printed Electronics

DTIC Science & Technology

2013-09-19

the printed semiconductor materials and their nanoparticle and colloidal precursors. Without this basic knowledge, further development and the...titania, silica ) were investigated in the production of complementary inks for complex devices. These were either obtained commercially in...layers were also deposited on borosilicate glass and silicon wafers. In the photovoltaic program, hybrid inorganic-organic semiconductor combinations

Ambipolar Small-Molecule:Polymer Blend Semiconductors for Solution-Processable Organic Field-Effect Transistors.

PubMed

Kang, Minji; Hwang, Hansu; Park, Won-Tae; Khim, Dongyoon; Yeo, Jun-Seok; Kim, Yunseul; Kim, Yeon-Ju; Noh, Yong-Young; Kim, Dong-Yu

2017-01-25

We report on the fabrication of an organic thin-film semiconductor formed using a blend solution of soluble ambipolar small molecules and an insulating polymer binder that exhibits vertical phase separation and uniform film formation. The semiconductor thin films are produced in a single step from a mixture containing a small molecular semiconductor, namely, quinoidal biselenophene (QBS), and a binder polymer, namely, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based on QBS/PVN blend semiconductor are then assembled using top-gate/bottom-contact device configuration, which achieve almost four times higher mobility than the neat QBS semiconductor. Depth profile via secondary ion mass spectrometry and atomic force microscopy images indicate that the QBS domains in the films made from the blend are evenly distributed with a smooth morphology at the bottom of the PVN layer. Bias stress test and variable-temperature measurements on QBS-based OFETs reveal that the QBS/PVN blend semiconductor remarkably reduces the number of trap sites at the gate dielectric/semiconductor interface and the activation energy in the transistor channel. This work provides a one-step solution processing technique, which makes use of soluble ambipolar small molecules to form a thin-film semiconductor for application in high-performance OFETs.

Method of making silicon on insalator material using oxygen implantation

DOEpatents

Hite, Larry R.; Houston, Ted; Matloubian, Mishel

1989-01-01

The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

Theory of Excitation Transfer between Two-Dimensional Semiconductor and Molecular Layers

NASA Astrophysics Data System (ADS)

Specht, Judith F.; Verdenhalven, Eike; Bieniek, Björn; Rinke, Patrick; Knorr, Andreas; Richter, Marten

2018-04-01

The geometry-dependent energy transfer rate from an electrically pumped inorganic semiconductor quantum well into an organic molecular layer is studied theoretically. We focus on Förster-type nonradiative excitation transfer between the organic and inorganic layers and include quasimomentum conservation and intermolecular coupling between the molecules in the organic film. (Transition) partial charges calculated from density-functional theory are used to calculate the coupling elements. The partial charges describe the spatial charge distribution and go beyond the common dipole-dipole interaction. We find that the transfer rates are highly sensitive to variations in the geometry of the hybrid inorganic-organic system. For instance, the transfer efficiency is improved by up to 2 orders of magnitude by tuning the spatial arrangement of the molecules on the surface: Parameters of importance are the molecular packing density along the effective molecular dipole axis and the distance between the molecules and the surface. We also observe that the device performance strongly depends on the orientation of the molecular dipole moments relative to the substrate dipole moments determined by the inorganic crystal structure. Moreover, the operating regime is identified where inscattering dominates over unwanted backscattering from the molecular layer into the substrate.

Comparative study on degradation and trap density-of-states of p type and n type organic semiconductors

NASA Astrophysics Data System (ADS)

Shijeesh, M. R.; Vikas, L. S.; Jayaraj, M. K.; Puigdollers, J.

2014-10-01

The OTFTs with both p type and n type channel layers were fabricated using the inverted-staggered (top contact) structure by thermal vapour deposition on Si/SiO2 substrate. Pentacene and N,N'-Dioctyl- 3,4,9,10- perylenedicarboximide (PTCDI-C8) were used as channel layer for the fabrications of p type and n type OTFTs respectively. A comparative study on the degradation and density of states (DOS) of p type and n type organic semiconductors have been carried out. In order to compare the stability and degradation of pentacene and PTCDI-C8 OTFTs, the devices were exposed to air for 2 h before performing electrical measurements in air. The DOS measurements revealed that a level with defect density of 1020 cm-3 was formed only in PTCDI C8 layer on exposure to air. The oxygen adsorption into the PTCDI-C8 active layer can be attributed to the formation of this level at 0.15 eV above the LUMO level. The electrical charge transport is strongly affected by the oxygen traps and hence n type organic materials are less stable than p type organic materials.

On the Effect of Confinement on the Structure and Properties of Small-Molecular Organic Semiconductors

DOE PAGES

Martín, Jaime; Dyson, Matthew; Reid, Obadiah G.; ...

2017-12-11

Many typical organic optoelectronic devices, such as light-emitting diodes, field-effect transistors, and photovoltaic cells, use an ultrathin active layer where the organic semiconductor is confined within nanoscale dimensions. However, the question of how this spatial constraint impacts the active material is rarely addressed, although it may have a drastic influence on the phase behavior and microstructure of the active layer and hence the final performance. Here, the small-molecule semiconductor p-DTS(FBTTh 2) 2 is used as a model system to illustrate how sensitive this class of material can be to spatial confinement on device-relevant length scales. It is also shown thatmore » this effect can be exploited; it is demonstrated, for instance, that spatial confinement is an efficient tool to direct the crystal orientation and overall texture of p-DTS(FBTTh 2) 2 structures in a controlled manner, allowing for the manipulation of properties including photoluminescence and charge transport characteristics. This insight should be widely applicable as the temperature/confinement phase diagrams established via differential scanning calorimetry and grazing-incidence X-ray diffraction are used to identify specific processing routes that can be directly extrapolated to other functional organic materials, such as polymeric semiconductors, ferroelectrics or high-refractive-index polymers, to induce desired crystal textures or specific (potentially new) polymorphs.« less

On the Effect of Confinement on the Structure and Properties of Small-Molecular Organic Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martín, Jaime; Dyson, Matthew; Reid, Obadiah G.

Many typical organic optoelectronic devices, such as light-emitting diodes, field-effect transistors, and photovoltaic cells, use an ultrathin active layer where the organic semiconductor is confined within nanoscale dimensions. However, the question of how this spatial constraint impacts the active material is rarely addressed, although it may have a drastic influence on the phase behavior and microstructure of the active layer and hence the final performance. Here, the small-molecule semiconductor p-DTS(FBTTh 2) 2 is used as a model system to illustrate how sensitive this class of material can be to spatial confinement on device-relevant length scales. It is also shown thatmore » this effect can be exploited; it is demonstrated, for instance, that spatial confinement is an efficient tool to direct the crystal orientation and overall texture of p-DTS(FBTTh 2) 2 structures in a controlled manner, allowing for the manipulation of properties including photoluminescence and charge transport characteristics. This insight should be widely applicable as the temperature/confinement phase diagrams established via differential scanning calorimetry and grazing-incidence X-ray diffraction are used to identify specific processing routes that can be directly extrapolated to other functional organic materials, such as polymeric semiconductors, ferroelectrics or high-refractive-index polymers, to induce desired crystal textures or specific (potentially new) polymorphs.« less

Measuring the complete cross-cell carrier mobility distributions in bulk heterojunction solar cells

NASA Astrophysics Data System (ADS)

Seifter, Jason; Sun, Yanming; Choi, Hyosung; Lee, Byoung Hoon; Heeger, Alan

2015-03-01

Carbon nanotube-enabled, vertical, organic field effect transistors (CN-VFETs) based on the small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) have demonstrated high current, low-power operation suitable for driving active matix organic light emitting diode (AMOLED) displays. This performance is achieved without the need for costly high-resolution patterning, despite the low mobility of the organic semiconductor, by employing sub-micron channel widths, defined in the vertical devices by the thickness of the semiconducting layer. Replacing the thermally evaporated small molecule semiconductor with a solution-processed polymer would possibly further simplify the fabrication process and reduce manufacturing cost. Here we investigate several polymer systems as wide bandgap semiconducting channel layers for potentially air stable and transparent CN-VFETs. The field effect mobility and optical transparency of the polymer layers are determined, and the performance and air stability of CN-VFET devices are measured. A. S. gratefully acknowledges support from the National Science Foundation under DMR-1156737.

Interface and gate bias dependence responses of sensing organic thin-film transistors.

PubMed

Tanese, Maria Cristina; Fine, Daniel; Dodabalapur, Ananth; Torsi, Luisa

2005-11-15

The effects of the exposure of organic thin-film transistors, comprising different organic semiconductors and gate dielectrics, to 1-pentanol are investigated. The transistor sensors exhibited an increase or a decrease of the transient source-drain current in the presence of the analyte, most likely as a result of a trapping or of a doping process of the organic active layer. The occurrence of these two effects, that can also coexist, depend on the gate-dielectric/organic semiconductor interface and on the applied gate field. Evidence of a systematic and sizable response enhancement for an OTFT sensor operated in the enhanced mode is also presented.

Nanoscale observation of organic thin film by atomic force microscopy

NASA Astrophysics Data System (ADS)

Mochizuki, Shota; Uruma, Takeshi; Satoh, Nobuo; Saravanan, Shanmugam; Soga, Tetsuo

2017-08-01

Organic photovoltaics (OPVs) fabricated using organic semiconductors and hybrid solar cells (HSCs) based on organic semiconductors/quantum dots (QDs) have been attracting significant attention owing to their potential use in low-cost solar energy-harvesting applications and flexible, light-weight, colorful, large-area devices. In this study, we observed and evaluated the surface of a photoelectric conversion layer (active layer) of the OPVs and HSCs based on phenyl-C61-butyric acid methyl ester (PCBM), poly(3-hexylthiophene) (P3HT), and zinc oxide (ZnO) nanoparticles. The experiment was performed using atomic force microscopy (AFM) combined with a frequency modulation detector (FM detector) and a contact potential difference (CPD) detection circuit. We experimentally confirmed the changes in film thickness and surface potential, as affected by the ZnO nanoparticle concentration. From the experimental results, we confirmed that ZnO nanoparticles possibly affect the structures of PCBM and P3HT. Also, we prepared an energy band diagram on the basis of the observation results, and analyzed the energy distribution inside the active layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states atmore » the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.« less

Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

S Kim; M Jang; H Yang

2011-12-31

Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO{sub 2} dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, weremore » characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.« less

Clean graphene electrodes on organic thin-film devices via orthogonal fluorinated chemistry.

PubMed

Beck, Jonathan H; Barton, Robert A; Cox, Marshall P; Alexandrou, Konstantinos; Petrone, Nicholas; Olivieri, Giorgia; Yang, Shyuan; Hone, James; Kymissis, Ioannis

2015-04-08

Graphene is a promising flexible, highly transparent, and elementally abundant electrode for organic electronics. Typical methods utilized to transfer large-area films of graphene synthesized by chemical vapor deposition on metal catalysts are not compatible with organic thin-films, limiting the integration of graphene into organic optoelectronic devices. This article describes a graphene transfer process onto chemically sensitive organic semiconductor thin-films. The process incorporates an elastomeric stamp with a fluorinated polymer release layer that can be removed, post-transfer, via a fluorinated solvent; neither fluorinated material adversely affects the organic semiconductor materials. We used Raman spectroscopy, atomic force microscopy, and scanning electron microscopy to show that chemical vapor deposition graphene can be successfully transferred without inducing defects in the graphene film. To demonstrate our transfer method's compatibility with organic semiconductors, we fabricate three classes of organic thin-film devices: graphene field effect transistors without additional cleaning processes, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices. These experiments demonstrate the potential of hybrid graphene/organic devices in which graphene is deposited directly onto underlying organic thin-film structures.

Method of producing strained-layer semiconductor devices via subsurface-patterning

DOEpatents

Dodson, Brian W.

1993-01-01

A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.

Method of doping organic semiconductors

DOEpatents

Kloc,; Christian Leo; Ramirez; Arthur Penn; So, Woo-Young

2010-10-26

An apparatus has a crystalline organic semiconducting region that includes polyaromatic molecules. A source electrode and a drain electrode of a field-effect transistor are both in contact with the crystalline organic semiconducting region. A gate electrode of the field-effect transistor is located to affect the conductivity of the crystalline organic semiconducting region between the source and drain electrodes. A dielectric layer of a first dielectric that is substantially impermeable to oxygen is in contact with the crystalline organic semiconducting region. The crystalline organic semiconducting region is located between the dielectric layer and a substrate. The gate electrode is located on the dielectric layer. A portion of the crystalline organic semiconducting region is in contact with a second dielectric via an opening in the dielectric layer. A physical interface is located between the second dielectric and the first dielectric.

Effect of dielectric layers on device stability of pentacene-based field-effect transistors.

PubMed

Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wang, Ying; Wu, Weiping; Zhu, Daoben

2009-09-07

We report stable organic field-effect transistors (OFETs) based on pentacene. It was found that device stability strongly depends on the dielectric layer. Pentacene thin-film transistors based on the bare or polystyrene-modified SiO(2) gate dielectrics exhibit excellent electrical stabilities. In contrast, the devices with the octadecyltrichlorosilane (OTS)-treated SiO(2) dielectric layer showed the worst stabilities. The effects of the different dielectrics on the device stabilities were investigated. We found that the surface energy of the gate dielectric plays a crucial role in determining the stability of the pentacene thin film, device performance and degradation of electrical properties. Pentacene aggregation, phase transfer and film morphology are also important factors that influence the device stability of pentacene devices. As a result of the surface energy mismatch between the dielectric layer and organic semiconductor, the electronic performance was degraded. Moreover, when pentacene was deposited on the OTS-treated SiO(2) dielectric layer with very low surface energy, pentacene aggregation occurred and resulted in a dramatic decrease of device performance. These results demonstrated that the stable OFETs could be obtained by using pentacene as a semiconductor layer.

Method of transferring a thin crystalline semiconductor layer

DOEpatents

Nastasi, Michael A [Sante Fe, NM; Shao, Lin [Los Alamos, NM; Theodore, N David [Mesa, AZ

2006-12-26

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

NASA Astrophysics Data System (ADS)

Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

2017-11-01

Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

Multi-Layer Organic Squaraine-Based Photodiode for Indirect X-Ray Detection

NASA Astrophysics Data System (ADS)

Iacchetti, Antonio; Binda, Maddalena; Natali, Dario; Giussani, Mattia; Beverina, Luca; Fiorini, Carlo; Peloso, Roberta; Sampietro, Marco

2012-10-01

The paper presents an organic-based photodiode coupled to a CsI(Tl) scintillator to realize an X-ray detector. A suitable blend of an indolic squaraine derivative and of fullerene derivative has been used for the photodiode, thus allowing external quantum efficiency in excess of 10% at a wavelength of 570 nm, well matching the scintillator output spectrum. Thanks to the additional deposition of a 15 nm thin layer of a suitable low electron affinity polymer, carriers injection from the metal into the organic semiconductor has been suppressed, and dark current density as low as has been obtained, which is comparable to standard Si-based photodiodes. By using a collimated X-ray beam impinging onto the scintillator mounted over the photodiode we have been able to measure current variations in the order of 150 pA on a dark current floor of less than 50 pA when operating the X-ray tube in switching mode, thus proving the feasibility of indirect X-ray detection by means of organic semiconductors.

Variable temperature semiconductor film deposition

DOEpatents

Li, X.; Sheldon, P.

1998-01-27

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Variable temperature semiconductor film deposition

DOEpatents

Li, Xiaonan; Sheldon, Peter

1998-01-01

A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering.

PubMed

Moon, Yeon-Keon; Moon, Dae-Yong; Lee, Sang-Ho; Jeong, Chang-Oh; Park, Jong-Wan

2008-09-01

Research in large area electronics, especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs). ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (micro(sat)) of 1.8 cm2/Vs and threshold voltage (Vth) of -0.7 V were obtained.

High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

NASA Astrophysics Data System (ADS)

Houin, G.; Duez, F.; Garcia, L.; Cantatore, E.; Torricelli, F.; Hirsch, L.; Belot, D.; Pellet, C.; Abbas, M.

2016-09-01

The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance with hysteresis-free characteristics. A number of approaches were applied to simplify the process, improve device performance and decrease the operating voltage: they include an oxide interfacial layer to decrease contact resistance; a polymer passivation layer to optimize semiconductor/dielectric interface and an anodized high-k oxide as dielectric layer for low voltage operation. The devices fabricated on plastic substrate yielded excellent electrical characteristics, showing mobility of 1.6 cm2/Vs, lack of hysteresis, operation below 5 V and on/off current ratio above 105. An OFET model based on variable ranging hopping theory was used to extract the relevant parameters from the transfer and output characteristics, which enabled us to simulate our devices achieving reasonable agreement with the measurements

Quantifying resistances across nanoscale low- and high-angle interspherulite boundaries in solution-processed organic semiconductor thin films.

PubMed

Lee, Stephanie S; Mativetsky, Jeffrey M; Loth, Marsha A; Anthony, John E; Loo, Yueh-Lin

2012-11-27

The nanoscale boundaries formed when neighboring spherulites impinge in polycrystalline, solution-processed organic semiconductor thin films act as bottlenecks to charge transport, significantly reducing organic thin-film transistor mobility in devices comprising spherulitic thin films as the active layers. These interspherulite boundaries (ISBs) are structurally complex, with varying angles of molecular orientation mismatch along their lengths. We have successfully engineered exclusively low- and exclusively high-angle ISBs to elucidate how the angle of molecular orientation mismatch at ISBs affects their resistivities in triethylsilylethynyl anthradithiophene thin films. Conductive AFM and four-probe measurements reveal that current flow is unaffected by the presence of low-angle ISBs, whereas current flow is significantly disrupted across high-angle ISBs. In the latter case, we estimate the resistivity to be 22 MΩμm(2)/width of the ISB, only less than a quarter of the resistivity measured across low-angle grain boundaries in thermally evaporated sexithiophene thin films. This discrepancy in resistivities across ISBs in solution-processed organic semiconductor thin films and grain boundaries in thermally evaporated organic semiconductor thin films likely arises from inherent differences in the nature of film formation in the respective systems.

Tuning charge carrier transport and optical birefringence in liquid-crystalline thin films: A new design space for organic light-emitting diodes.

PubMed

Keum, Chang-Min; Liu, Shiyi; Al-Shadeedi, Akram; Kaphle, Vikash; Callens, Michiel Koen; Han, Lu; Neyts, Kristiaan; Zhao, Hongping; Gather, Malte C; Bunge, Scott D; Twieg, Robert J; Jakli, Antal; Lüssem, Björn

2018-01-15

Liquid-crystalline organic semiconductors exhibit unique properties that make them highly interesting for organic optoelectronic applications. Their optical and electrical anisotropies and the possibility to control the alignment of the liquid-crystalline semiconductor allow not only to optimize charge carrier transport, but to tune the optical property of organic thin-film devices as well. In this study, the molecular orientation in a liquid-crystalline semiconductor film is tuned by a novel blading process as well as by different annealing protocols. The altered alignment is verified by cross-polarized optical microscopy and spectroscopic ellipsometry. It is shown that a change in alignment of the liquid-crystalline semiconductor improves charge transport in single charge carrier devices profoundly. Comparing the current-voltage characteristics of single charge carrier devices with simulations shows an excellent agreement and from this an in-depth understanding of single charge carrier transport in two-terminal devices is obtained. Finally, p-i-n type organic light-emitting diodes (OLEDs) compatible with vacuum processing techniques used in state-of-the-art OLEDs are demonstrated employing liquid-crystalline host matrix in the emission layer.

Semiconductor nanocrystal-based phagokinetic tracking

DOEpatents

Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

2014-11-18

Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

Polarization-induced transport in organic field-effect transistors: the role of ferroelectric dielectrics

NASA Astrophysics Data System (ADS)

Guha, Suchismita; Laudari, Amrit

2017-08-01

The ferroelectric nature of polymer ferroelectrics such as poly(vinylidene fluoride) (PVDF) has been known for over 45 years. However, its role in interfacial transport in organic/polymeric field-effect transistors (FETs) is not that well understood. Dielectrics based on PVDF and its copolymers are a perfect test-bed for conducting transport studies where a systematic tuning of the dielectric constant with temperature may be achieved. The charge transport mechanism in an organic semiconductor often occurs at the intersection of band-like coherent motion and incoherent hopping through localized states. By choosing two small molecule organic semiconductors - pentacene and 6,13 bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) - along with a copolymer of PVDF (PVDF-TrFe) as the dielectric layer, the transistor characteristics are monitored as a function of temperature. A negative coefficient of carrier mobility is observed in TIPS-pentacene upwards of 200 K with the ferroelectric dielectric. In contrast, TIPS-pentacene FETs show an activated transport with non-ferroelectric dielectrics. Pentacene FETs, on the other hand, show a weak temperature dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE, which is attributed to polarization fluctuation driven transport resulting from a coupling of the charge carriers to the surface phonons of the dielectric layer. Further, we show that there is a strong correlation between the nature of traps in the organic semiconductor and interfacial transport in organic FETs, especially in the presence of a ferroelectric dielectric.

Structure and properties of small molecule-polymer blend semiconductors for organic thin film transistors.

PubMed

Kang, Jihoon; Shin, Nayool; Jang, Do Young; Prabhu, Vivek M; Yoon, Do Y

2008-09-17

A comprehensive structural and electrical characterization of solution-processed blend films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) semiconductor and poly(alpha-methylstyrene) (PalphaMS) insulator was performed to understand and optimize the blend semiconductor films, which are very attractive as the active layer in solution-processed organic thin-film transistors (OTFTs). Our study, based on careful measurements of specular neutron reflectivity and grazing-incidence X-ray diffraction, showed that the blends with a low molecular-mass PalphaMS exhibited a strong segregation of TIPS-pentacene only at the air interface, but surprisingly the blends with a high molecular-mass PalphaMS showed a strong segregation of TIPS-pentacene at both air and bottom substrate interfaces with high crystallinity and desired orientation. This finding led to the preparation of a TIPS-pentacene/PalphaMS blend active layer with superior performance characteristics (field-effect mobility, on/off ratio, and threshold voltage) over those of neat TIPS-pentacene, as well as the solution-processability of technologically attractive bottom-gate/bottom-contact OTFT devices.

Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Sekula-Moise, Patricia A.; Sieg, Robert M.; Drotos, Mark N.; Bogner, Nancy A.

1992-01-01

An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.

Hybrid Lead Halide Layered Perovskites with Silsesquioxane Interlayers.

PubMed

Kataoka, Sho; Kaburagi, Wako; Mochizuki, Hiroyuki; Kamimura, Yoshihiro; Sato, Kazuhiko; Endo, Akira

2018-01-01

Hybrid organic-lead halide perovskites exhibit remarkable properties as semiconductors and light absorbers. Here, we report the formation of silsesquioxane-lead halide hybrid layered perovskites. We prepared silsesquioxane with a cubic cage-like structure and fabricated hybrid silsesquioxane-lead halide layered perovskites in a self-assembled manner. It is demonstrated that the silsesquioxane maintain their cage-like structure between lead halide perovskite layers. The silsesquioxane-lead halide perovskites also show excitonic absorption and emission in the visible light region similar to typical lead halide layered perovskites.

Hybrid Molecular and Spin-Semiconductor Based Research

DTIC Science & Technology

2005-02-02

thick layers of low- temperature-grown (LTG) GaAs, i.e. GaAs grown at lower than normal substrate temperatures in a molecular beam epitaxy system...1999 – Oct.31, 2004 4. TITLE AND SUBTITLE Hybrid Molecular and Spin-Semiconductor Based research 5. FUNDING NUMBERS DAAD19-99-1-0198...spintronic devices. Thrust III is entitled “ Molecular Electronics” and its objective is to develop, characterize and model organic/inorganic

Group I-III-VI.sub.2 semiconductor films for solar cell application

DOEpatents

Basol, Bulent M.; Kapur, Vijay K.

1991-01-01

This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.

Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1998-01-01

Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe.

PubMed

Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

2018-01-01

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe

NASA Astrophysics Data System (ADS)

Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

2018-01-01

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

A new electrode design for ambipolar injection in organic semiconductors.

PubMed

Kanagasekaran, Thangavel; Shimotani, Hidekazu; Shimizu, Ryota; Hitosugi, Taro; Tanigaki, Katsumi

2017-10-17

Organic semiconductors have attracted much attention for low-cost, flexible and human-friendly optoelectronics. However, achieving high electron-injection efficiency is difficult from air-stable electrodes and cannot be equivalent to that of holes. Here, we present a novel concept of electrode composed of a bilayer of tetratetracontane (TTC) and polycrystalline organic semiconductors (pc-OSC) covered by a metal layer. Field-effect transistors of single-crystal organic semiconductors with the new electrodes of M/pc-OSC/TTC (M: Ca or Au) show both highly efficient electron and hole injection. Contact resistance for electron injection from Au/pc-OSC/TTC and hole injection from Ca/pc-OSC/TTC are comparable to those for electron injection from Ca and hole injection from Au, respectively. Furthermore, the highest field-effect mobilities of holes (22 cm 2  V -1  s -1 ) and electrons (5.0 cm 2  V -1  s -1 ) are observed in rubrene among field-effect transistors with electrodes so far proposed by employing Ca/pc-OSC/TTC and Au/pc-OSC/TTC electrodes for electron and hole injection, respectively.One of technological challenges building organic electronics is efficient injection of electrons at metal-semiconductor interfaces compared to that of holes. The authors show an air-stable electrode design with induced gap states, which support Fermi level pinning and thus ambipolar carrier injection.

Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

DOEpatents

Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; Cruz-Campa, Jose Luis

2015-05-12

A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.

Blending crystalline/liquid crystalline small molecule semiconductors: A strategy towards high performance organic thin film transistors

NASA Astrophysics Data System (ADS)

He, Chao; He, Yaowu; Li, Aiyuan; Zhang, Dongwei; Meng, Hong

2016-10-01

Solution processed small molecule polycrystalline thin films often suffer from the problems of inhomogeneity and discontinuity. Here, we describe a strategy to solve these problems through deposition of the active layer from a blended solution of crystalline (2-phenyl[1]benzothieno[3,2-b][1]benzothiophene, Ph-BTBT) and liquid crystalline (2-(4-dodecylphenyl) [1]benzothieno[3,2-b]benzothiophene, C12-Ph-BTBT) small molecule semiconductors with the hot spin-coating method. Organic thin film transistors with average hole mobility approaching 1 cm2/V s, much higher than that of single component devices, have been demonstrated, mainly due to the improved uniformity, continuity, crystallinity, and stronger intermolecular π-π stacking in blend thin films. Our results indicate that the crystalline/liquid crystalline semiconductor blend method is an effective way to enhance the performance of organic transistors.

Interface Energetics and Chemical Doping of Organic Electronic Materials

NASA Astrophysics Data System (ADS)

Kahn, Antoine

2014-03-01

The energetics of organic semiconductors and their interfaces are central to the performance of organic thin film devices. The relative positions of charge transport states across the many interfaces of multi-layer OLEDs, OPV cells and OFETs determine in great part the efficiency and lifetime of these devices. New experiments are presented here, that look in detail at the position of these transport states and associated gap states and electronic traps that tail into the energy gap of organic molecular (e.g. pentacene) or polymer (P3HT, PBDTTT-C) semiconductors, and which directly affect carrier mobility in these materials. Disorder, sometime caused by simple exposure to an inert gas, impurities and defects are at the origin of these electronic gap states. Recent efforts in chemical doping in organic semiconductors aimed at mitigating the impact of electronic gap states are described. An overview of the reducing or oxidizing power of several n- and p-type dopants for vacuum- or solution-processed films, and their effect on the electronic structure and conductivity of both vacuum- and solution-processed organic semiconductor films is given. Finally, the filling (compensation) of active gap states via doping is investigated on the electron-transport materials C60 and P(NDI2OD-T2) , and the hole-transport polymer PBDTTT-C.

Effects of Contact-Induced Doping on the Behaviors of Organic Photovoltaic Devices

DOE PAGES

Wang, Jian; Xu, Liang; Lee, Yun -Ju; ...

2015-10-09

Substrates can significantly affect the electronic properties of organic semiconductors. In this paper, we report the effects of contact-induced doping, arising from charge transfer between a high work function hole extraction layer (HEL) and the organic active layer, on organic photovoltaic device performance. Employing a high work function HEL is found to increase doping in the active layer and decrease photocurrent. Combined experimental and modeling investigations reveal that higher doping increases polaron–exciton quenching and carrier recombination within the field-free region. Consequently, there exists an optimal HEL work function that enables a large built-in field while keeping the active layer dopingmore » low. This value is found to be ~0.4 eV larger than the pinning level of the active layer material. As a result, these understandings establish a criterion for optimal design of the HEL when adapting a new active layer system and can shed light on optimizing performance in other organic electronic devices.« less

Conductive layer for biaxially oriented semiconductor film growth

DOEpatents

Findikoglu, Alp T.; Matias, Vladimir

2007-10-30

A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

Field-effect P-N junction

DOEpatents

Regan, William; Zettl, Alexander

2015-05-05

This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

Solvent-Free Toner Printing of Organic Semiconductor Layer in Flexible Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Sakai, Masatoshi; Koh, Tokuyuki; Toyoshima, Kenji; Nakamori, Kouta; Okada, Yugo; Yamauchi, Hiroshi; Sadamitsu, Yuichi; Shinamura, Shoji; Kudo, Kazuhiro

2017-07-01

A solvent-free printing process for printed electronics is successfully developed using toner-type patterning of organic semiconductor toner particles and the subsequent thin-film formation. These processes use the same principle as that used for laser printing. The organic thin-film transistors are prepared by electrically distributing the charged toner onto a Au electrode on a substrate film, followed by thermal lamination. The thermal lamination is effective for obtaining an oriented and crystalline thin film. Toner printing is environmentally friendly compared with other printing technologies because it is solvent free, saves materials, and enables easy recycling. In addition, this technology simultaneously enables both wide-area and high-resolution printing.

In situ growth of metal particles on 3D urchin-like WO3 nanostructures.

PubMed

Xi, Guangcheng; Ye, Jinhua; Ma, Qiang; Su, Ning; Bai, Hua; Wang, Chao

2012-04-18

Metal/semiconductor hybrid materials of various sizes and morphologies have many applications in areas such as catalysis and sensing. Various organic agents are necessary to stabilize metal nanoparticles during synthesis, which leads to a layer of organic compounds present at the interfaces between the metal particles and the semiconductor supports. Generally, high-temperature oxidative treatment is used to remove the organics, which can extensively change the size and morphology of the particles, in turn altering their activity. Here we report a facile method for direct growth of noble-metal particles on WO(3) through an in situ redox reaction between weakly reductive WO(2.72) and oxidative metal salts in aqueous solution. This synthetic strategy has the advantages that it takes place in one step and requires no foreign reducing agents, stabilizing agents, or pretreatment of the precursors, making it a practical method for the controlled synthesis of metal/semiconductor hybrid nanomaterials. This synthetic method may open up a new way to develop metal-nanoparticle-loaded semiconductor composites. © 2012 American Chemical Society

Ferroelectric polarization induces electric double layer bistability in electrolyte-gated field-effect transistors.

PubMed

Fabiano, Simone; Crispin, Xavier; Berggren, Magnus

2014-01-08

The dense surface charges expressed by a ferroelectric polymeric thin film induce ion displacement within a polyelectrolyte layer and vice versa. This is because the density of dipoles along the surface of the ferroelectric thin film and its polarization switching time matches that of the (Helmholtz) electric double layers formed at the ferroelectric/polyelectrolyte and polyelectrolyte/semiconductor interfaces. This combination of materials allows for introducing hysteresis effects in the capacitance of an electric double layer capacitor. The latter is advantageously used to control the charge accumulation in the semiconductor channel of an organic field-effect transistor. The resulting memory transistors can be written at a gate voltage of around 7 V and read out at a drain voltage as low as 50 mV. The technological implication of this large difference between write and read-out voltages lies in the non-destructive reading of this ferroelectric memory.

Single crystal, liquid crystal, and hybrid organic semiconductors

NASA Astrophysics Data System (ADS)

Twieg, Robert J.; Getmanenko, Y.; Lu, Z.; Semyonov, A. N.; Huang, S.; He, P.; Seed, A.; Kiryanov, A.; Ellman, B.; Nene, S.

2003-07-01

The synthesis and characterization of organic semiconductors is being pursued in three primary structure formats: single crystal, liquid crystal and organic-inorganic hybrid. The strategy here is to share common structures, synthesis methods and fabrication techniques across these formats and to utilize common characterization tools such as the time of flight technique. The single crystal efforts concentrate on aromatic and heteroaromatic compounds including simple benzene derivatives and derivatives of the acenes. The structure-property relationships due to incorporation of small substituents and heteroatoms are being examined. Crystals are grown by solution, melt or vapor transport techniques. The liquid crystal studies exploit their self-organizing properties and relative ease of sample preparation. Though calamitic systems tha deliver the largest mobilities are higher order smectics, even some unusual twist grain boundary phases are being studied. We are attempting to synthesize discotic acene derivatives with appropriate substitution patterns to render them mesogenic. The last format being examined is the hybrid organic-inorganic class. Here, layered materials of alternating organic and inorganic composition are designed and synthesized. Typical materials are conjugated aromatic compounds, usually functinalized with an amine or a pyridine and reacted with appropriate reactive metal derivatives to incorporate them into metal oxide or sulfide layers.

Interfaces of electrical contacts in organic semiconductor devices

NASA Astrophysics Data System (ADS)

Demirkan, Korhan

Progress in organic semiconductor devices relies on better understanding of interfaces as well as material development. The engineering of interfaces that exhibit low resistance, low operating voltage and long-term stability to minimize device degradation is one of the crucial requirements. Photoelectron spectroscopy is a powerful technique to study the metal-semiconductor interfaces, allowing: (i) elucidation of the energy levels of the semiconductor and the contacts that determine Schottky barrier height, (ii) inspection of electrical interactions (such as charge transfer, dipole formation, formation of induced density of states or formation of polaron/bi-polaron states) that effect the energy level alignment, (iii) determination of interfacial chemistry, and (iv) estimation of interface morphology. In this thesis, we have used photoelectron spectroscopy extensively for detailed analysis of the metal organic semiconductor interfaces. In this study, we demonstrate the use of photoelectron spectroscopy for construction of energy level diagrams and display some results related to chemical tailoring of materials for engineering interfaces with lowered Schottky barriers. Following our work on the energy level alignment of poly(p-phenyene vinylene) based organic semiconductors on various substrates [Au, indium tin oxide, Si (with native oxide) and Al (with native oxide)], we tested controlling the energy level alignment by using polar self assembled molecules (SAMs). Photoelectron spectroscopy showed that, by introducing SAMs on the Au surface, we successfully changed the effective work function of Au surface. We found that in this case, the change in the effective work function of the metal surface was not reflected as a shift in the energy levels of the organic semiconductor, as opposed to the results achieved with different substrate materials. To investigate the chemical interactions at the metal/organic interface, we studied the metallization of poly(2-methoxy-5,2'-ethyl-hexyloxy-phenylene vinylene) (MEH-PPV), polystyrene (PS) and ozone treated polystyrene (PS-O3) surfaces by thermal deposition of aluminum. Photoelectron spectroscopy showed the degree of chemical interaction between Al and each polymer, for MEH-PPV, the chemical interactions were mainly through the C-O present in the side chain of the polymer structure. The chemical interaction of Al with polystyrene was less significant, but it showed a dramatic increase after ozone treatment of the polystyrene surface (due to the formation of exposed oxygen sites). Formation of metal oxide and metal-organic compound is detected during the Al metallization of MEH-PPV and ozone-treated PS surfaces. Our results showed that the condensation of Al on polymer surfaces is highly dependent on surface reactivity. Enormous differences were observed for the condensation coefficient of Al on PS and PS-O3 surfaces. For the inert PS surface, results showed that Al atoms poorly wet the polymer surface and form distributed clusters at the surface. Results on reactive polymer surfaces suggest morphology reminiscent of a Stranski-Krastanov-type growth and high contact area. Many studies have shown that the insertion of a thin interlayer of the oxide or fluoride of alkali or alkaline metals between the low work function electrode and the organic semiconductor layers dramatically lowers the onset voltage and increases the efficiency compared to identical devices without the insulating layer. Various modes have been suggested for the mechanism of device performance enhancement. We have investigated the chemical and electrical interaction of (i) LiF with MEH-PPV, (ii) Al with MEH-PPV in the presence of a thin LiF layer at the interface, and finally (iii) the interaction of Al with LiF. AFM and XPS data showed that LiF forms island on the surface. Our data in agreement with various existing models suggested the (i) alteration in the electronic properties under applied bias, (ii) doping of the organic semiconductor, (iii) formation of metal alloy (Au-Li). In addition to the possible electrical modifications at the interface suggested previously, our data also suggest a change in the film growth on LiF modified surfaces.

Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates

Treesearch

Cheng-Yin Wang; Canek Fuentes-Hernandez; Jen-Chieh Liu; Amir Dindar; Sangmoo Choi; Jeffrey P. Youngblood; Robert J. Moon; Bernard Kippelen

2015-01-01

We report on the performance and the characterization of top-gate organic field-effect transistors (OFETs), comprising a bilayer gate dielectric of CYTOP/ Al2O3 and a solution-processed semiconductor layer made of a blend of TIPS-pentacene:PTAA, fabricated on recyclable cellulose nanocrystal−glycerol (CNC/glycerol...

Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs

PubMed Central

Hosono, Hideo; Toda, Yoshitake; Kamiya, Toshio; Watanabe, Satoru

2017-01-01

Efficient electron transfer between a cathode and an active organic layer is one key to realizing high-performance organic devices, which require electron injection/transport materials with very low work functions. We developed two wide-bandgap amorphous (a-) oxide semiconductors, a-calcium aluminate electride (a-C12A7:e) and a-zinc silicate (a-ZSO). A-ZSO exhibits a low work function of 3.5 eV and high electron mobility of 1 cm2/(V · s); furthermore, it also forms an ohmic contact with not only conventional cathode materials but also anode materials. A-C12A7:e has an exceptionally low work function of 3.0 eV and is used to enhance the electron injection property from a-ZSO to an emission layer. The inverted electron-only and organic light-emitting diode (OLED) devices fabricated with these two materials exhibit excellent performance compared with the normal type with LiF/Al. This approach provides a solution to the problem of fabricating oxide thin-film transistor-driven OLEDs with both large size and high stability. PMID:28028243

Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

NASA Astrophysics Data System (ADS)

Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

2017-08-01

Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

Method for removing semiconductor layers from salt substrates

DOEpatents

Shuskus, Alexander J.; Cowher, Melvyn E.

1985-08-27

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

High-Performance Organic Vertical Thin Film Transistor Using Graphene as a Tunable Contact.

PubMed

Liu, Yuan; Zhou, Hailong; Weiss, Nathan O; Huang, Yu; Duan, Xiangfeng

2015-11-24

Here we present a general strategy for the fabrication of high-performance organic vertical thin film transistors (OVTFTs) based on the heterostructure of graphene and different organic semiconductor thin films. Utilizing the unique tunable work function of graphene, we show that the vertical carrier transport across the graphene-organic semiconductor junction can be effectively modulated to achieve an ON/OFF ratio greater than 10(3). Importantly, with the OVTFT design, the channel length is determined by the organic thin film thickness rather than by lithographic resolution. It can thus readily enable transistors with ultrashort channel lengths (<200 nm) to afford a delivering current greatly exceeding that of conventional planar TFTs, thus enabling a respectable operation frequency (up to 0.4 MHz) while using low-mobility organic semiconductors and low-resolution lithography. With this vertical device architecture, the entire organic channel is sandwiched and naturally protected between the source and drain electrodes, which function as the self-passivation layer to ensure stable operation of both p- and n-type OVTFTs in ambient conditions and enable complementary circuits with voltage gain. The creation of high-performance and highly robust OVTFTs can open up exciting opportunities in large-area organic macroelectronics.

Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage.

PubMed

Feng, Chengang; Yi, Mingdong; Yu, Shunyang; Hümmelgen, Ivo A; Zhang, Tong; Ma, Dongge

2008-04-01

We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage. The addition of two Ca layers, leading to a Ca/Ag/Ca base, allowed to obtain a large value of common-emitter current gain, but still retaining the permeable-base transistor character. This kind of vertical devices produced by simple technologies offer attractive new possibilities due to the large variety of available molecular semiconductors, opening the possibility of incorporating new functionalities in silicon-based devices.

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Aoki, T.; Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T.

2014-07-01

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al2O3. This AlN passivation incorporated nitrogen at the Al2O3/GaAs interface, improving the capacitance-voltage (C-V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C-V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (Dit). The Dit was reduced over the entire GaAs band gap. In particular, these devices exhibited Dit around the midgap of less than 4 × 1012 cm-2eV-1, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

Synthesis, structural, thermal and optical studies of inorganic-organic hybrid semiconductors, R-PbI4

NASA Astrophysics Data System (ADS)

Pradeesh, K.; Nageswara Rao, K.; Vijaya Prakash, G.

2013-02-01

Wide varieties of naturally self-assembled two-dimensional inorganic-organic (IO) hybrid semiconductors, (4-ClC6H4NH3)2PbI4, (C6H9C2H4NH3)2PbI4, (CnH2n+1NH3)2PbI4 (where n = 12, 16, 18), (CnH2n-1NH3)2PbI4 (where n = 3, 4, 5), (C6H5C2H4NH3)2PbI4, NH3(CH2)12NH3PbI4, and (C4H3SC2H4NH3)2PbI4, were fabricated by intercalating structurally diverse organic guest moieties into lead iodide perovskite structure. The crystal packing of all these fabricated IO-hybrids comprises of well-ordered organic and inorganic layers, stacked-up alternately along c-axis. Almost all these hybrids are thermally stable upto 200 °C and show strong room-temperature exciton absorption and photoluminescence features. These strongly confined optical excitons are highly influenced by structural deformation of PbI matrix due to the conformation of organic moiety. A systematic correlation of optical exciton behavior of IO-hybrids with the organic/inorganic layer thicknesses, intercalating organic moieties, and various structural disorders were discussed. This systematic study clearly suggests that the PbI layer crumpling is directly responsible for the tunability of optical exciton energy.

Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds

DOEpatents

Mickelsen, Reid A.; Chen, Wen S.

1983-01-01

Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

X-ray diffraction study of the molecular propolis films deposited from an alcohol solution onto the cleavage surfaces of layered V2VI3 compounds

NASA Astrophysics Data System (ADS)

Drapak, S. I.; Gavrylyuk, S. V.; Kaminskii, V. M.; Kovalyuk, Z. D.

2008-09-01

The structures of the molecular propolis films deposited from an alcohol solution on the (0001) cleavage surface of layered bismuth selenide and telluride are studied by X-ray diffraction. Despite the chemical interaction between the semiconductor substrates and the organic-substance components, the molecular structural ordering of the propolis films is shown to be identical to that in the films of this substance on the surface of amorphous glass substrates. The chemical and deformation interaction between the organic substance and the layered V2VI3 compounds is found to result in the formation of an organic-inorganic sandwich nanostructure at a distance of ˜0.3 μm from the layered crystal-propolis film interface.

Alpha voltaic batteries and methods thereof

NASA Technical Reports Server (NTRS)

Jenkins, Phillip (Inventor); Scheiman, David (Inventor); Castro, Stephanie (Inventor); Raffaelle, Ryne P. (Inventor); Wilt, David (Inventor); Chubb, Donald (Inventor)

2011-01-01

An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vashchenko, A. A.; Goriachiy, D. O., E-mail: goryachii@phystech.edu; Vitukhnovsky, A. G.

Experimental samples of organic light-emitting diodes with transport layers based on polythienothiophenes and using CdSe/CdS/ZnS semiconductor quantum dots with an internal quantum efficiency up to 85% in the emitting layer are investigated. It is shown that solubility and film-forming properties are key for using polythienothiophenes in light-emitting diodes. The most promising polythienothiophenes are identified on the basis of the results obtained.

Solution-based electrical doping of semiconducting polymer films over a limited depth

NASA Astrophysics Data System (ADS)

Kolesov, Vladimir A.; Fuentes-Hernandez, Canek; Chou, Wen-Fang; Aizawa, Naoya; Larrain, Felipe A.; Wang, Ming; Perrotta, Alberto; Choi, Sangmoo; Graham, Samuel; Bazan, Guillermo C.; Nguyen, Thuc-Quyen; Marder, Seth R.; Kippelen, Bernard

2017-04-01

Solution-based electrical doping protocols may allow more versatility in the design of organic electronic devices; yet, controlling the diffusion of dopants in organic semiconductors and their stability has proven challenging. Here we present a solution-based approach for electrical p-doping of films of donor conjugated organic semiconductors and their blends with acceptors over a limited depth with a decay constant of 10-20 nm by post-process immersion into a polyoxometalate solution (phosphomolybdic acid, PMA) in nitromethane. PMA-doped films show increased electrical conductivity and work function, reduced solubility in the processing solvent, and improved photo-oxidative stability in air. This approach is applicable to a variety of organic semiconductors used in photovoltaics and field-effect transistors. PMA doping over a limited depth of bulk heterojunction polymeric films, in which amine-containing polymers were mixed in the solution used for film formation, enables single-layer organic photovoltaic devices, processed at room temperature, with power conversion efficiencies up to 5.9 +/- 0.2% and stable performance on shelf-lifetime studies at 60 °C for at least 280 h.

[Optical and electrical properties of NPB/Alq3 organic quantum well].

PubMed

Huang, Jin-Zhao; Xu, Zheng; Zhao, Su-Ling; Zhang, Fu-Jun; Wang, Yong

2007-04-01

In the present paper, the organic quantum-well device similar to the type-II quantum well of inorganic semiconductor material was prepared by heat evaporation. NPB (N, N'-di-[(1-naphthalenyl)-N, N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine) and Alq3 (Tris-(8-quinolinolato) aluminum) act as the potential barrier layer and the potential well layer respectively. Besides, the single layer structure of Alq3 was prepared. In the experiments, the Forster nonradiative resonant energy transfer from the barrier layer to the well layer was identified, and the quantum well luminescence device possesses a favorable current-voltage property. The narrowing of spectrum was observed, and the spectrum shifted to blue region continuously when the applied voltage increased.

High efficiency, low cost, thin film silicon solar cell design and method for making

DOEpatents

Sopori, Bhushan L.

2001-01-01

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

High efficiency low cost thin film silicon solar cell design and method for making

DOEpatents

Sopori, Bhushan L.

1999-01-01

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

Semiconductor films on flexible iridium substrates

DOEpatents

Goyal, Amit

2005-03-29

A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

Sci-Sat AM: Radiation Dosimetry and Practical Therapy Solutions - 01: Optimization of an organic field effect transistor for radiation dosimetry measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Syme, Alasdair

2016-08-15

Purpose: To use Monte Carlo simulations to optimize the design of an organic field effect transistor (OFET) to maximize water-equivalence across the diagnostic and therapeutic photon energy ranges. Methods: DOSXYZnrc was used to simulate transport of mono-energetic photon beams through OFETs. Dose was scored in the dielectric region of devices and used for evaluating the response of the device relative to water. Two designs were considered: 1. a bottom-gate device on a substrate of polyethylene terephthalate (PET) with an aluminum gate, a dielectric layer of either PMMA or CYTOP (a fluorocarbon) and an organic semiconductor (pentacene). 2. a symmetric bilayermore » design was employed in which two polymer layers (PET and CYTOP) were deposited both below the gate and above the semiconductor to improve water-equivalence and reduce directional dependence. The relative thickness of the layers was optimized to maximize water-equivalence. Results: Without the bilayer, water-equivalence was diminished relative to OFETs with the symmetric bilayer at low photon energies (below 80 keV). The bilayer’s composition was designed to have one layer with an effective atomic number larger than that of water and the other with an effective atomic number lower than that of water. For the particular materials used in this study, a PET layer 0.1mm thick coupled with a CYTOP layer of 900 nm provided a device with a water-equivalence within 3% between 20 keV and 5 MeV. Conclusions: organic electronic devices hold tremendous potential as water-equivalent dosimeters that could be used in a wide range of applications without recalibration.« less

Evaluation of the density of the charge trapped in organic ferroelectric capacitors based on the Mott-Schottky model

NASA Astrophysics Data System (ADS)

Kim, Won-Ho; Kwon, Jin-Hyuk; Park, Gyeong-Tae; Kim, Jae-Hyun; Bae, Jin-Hyuk; Zhang, Xue; Park, Jaehoon

2014-09-01

Organic ferroelectric capacitors were fabricated using pentacene and poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as an organic semiconductor and a ferroelectric material, respectively. A paraelectric poly(vinyl cinnamate) layer was adopted as an interlayer between the PVDF-TrFE layer and the bottom electrode. The paraelectric interlayer induced a depolarization field opposite to the direction of the polarization formed in the ferroelectric PVDF-TrFE insulator, thereby suppressing spontaneous polarization. As a result, the Mott-Schottky model could be used to evaluate, from the extracted flat-band voltages, the density of the charge trapped in the organic ferroelectric capacitors.

Light emitting diode with porous SiC substrate and method for fabricating

DOEpatents

Li, Ting; Ibbetson, James; Keller, Bernd

2005-12-06

A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.

Photovoltaic healing of non-uniformities in semiconductor devices

DOEpatents

Karpov, Victor G.; Roussillon, Yann; Shvydka, Diana; Compaan, Alvin D.; Giolando, Dean M.

2006-08-29

A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.

Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

DOEpatents

Norman, Andrew G; Ptak, Aaron J

2013-08-13

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a') maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.

Synthesis and spectroscopic properties of silica-dye-semiconductor nanocrystal hybrid particles.

PubMed

Ren, Ting; Erker, Wolfgang; Basché, Thomas; Schärtl, Wolfgang

2010-12-07

We prepared silica-dye-nanocrystal hybrid particles and studied the energy transfer from semiconductor nanocrystals (= donor) to organic dye molecules (= acceptor). Multishell CdSe/CdS/ZnS semiconductor nanocrystals were adsorbed onto monodisperse Stöber silica particles with an outer silica shell of thickness 2-23 nm containing organic dye molecules (Texas Red). The thickness of this dye layer has a strong effect on the energy transfer efficiency, which is explained by the increase in the number of dye molecules homogeneously distributed within the silica shell, in combination with an enhanced surface adsorption of nanocrystals with increasing dye amount. Our conclusions were underlined by comparison of the experimental results with numerically calculated FRET efficiencies and by control experiments confirming attractive interaction between the nanocrystals and Texas Red freely dissolved in solution.

Spontaneously formed high-performance charge-transport layers of organic single-crystal semiconductors on precisely synthesized insulating polymers

NASA Astrophysics Data System (ADS)

Makita, Tatsuyuki; Sasaki, Masayuki; Annaka, Tatsuro; Sasaki, Mari; Matsui, Hiroyuki; Mitsui, Chikahiko; Kumagai, Shohei; Watanabe, Shun; Hayakawa, Teruaki; Okamoto, Toshihiro; Takeya, Jun

2017-04-01

Charge-transporting semiconductor layers with high carrier mobility and low trap-density, desired for high-performance organic transistors, are spontaneously formed as a result of thermodynamic phase separation from a blend of π-conjugated small molecules and precisely synthesized insulating polymers dissolved in an aromatic solvent. A crystal film grows continuously to the size of centimeters, with the critical conditions of temperature, concentrations, and atmosphere. It turns out that the molecular weight of the insulating polymers plays an essential role in stable film growth and interfacial homogeneity at the phase separation boundary. Fabricating the transistor devices directly at the semiconductor-insulator boundaries, we demonstrate that the mixture of 3,11-didecyldinaphtho[2,3-d:2',3'-d']benzo[1,2-b:4,5-b']dithiophene and poly(methyl methacrylate) with the optimized weight-average molecular weight shows excellent device performances. The spontaneous phase separation with a one-step fabrication process leads to a high mobility up to 10 cm2 V-1 s-1 and a low subthreshold swing of 0.25 V dec-1 even without any surface treatment such as self-assembled monolayer modifications on oxide gate insulators.

Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

DOEpatents

Forrest, Stephen R.; Wei, Guodan

2010-07-06

A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

DOEpatents

Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

2012-09-04

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Current-voltage characteristics of organic semiconductors: Interfacial control between organic layers and electrodes

NASA Astrophysics Data System (ADS)

Kondo, Takeshi

2007-12-01

Current-voltage (I-V) characteristics of organic molecular glasses and solution processable materials embedded between two electrodes were studied to find materials possessing high charge-carrier mobilities and to design organic memory devices. The comparison studies between TOF, FET and SCLC measurements confirm the validity of using analyses of I-V characteristics to determine the mobility of organic semiconductors. Hexaazatrinaphthylene derivatives tri-substituted by electron withdrawing groups were characterized as potential electron transporting molecular glasses. The presence of two isomers has important implications for film morphology and effective mobility. The statistical isomer mixture of hexaazatrinaphthylene derivatized with pentafluoro-phenylmethyl ester is able to form amorphous films, and electron mobilities with the range of 10--2 cm2/Vs are observed in their I-V characteristics. Single-layer organic memory devices consisting of a polymer layer embedded between an Al electrode and ITO modified with Ag nanodots (Ag-NDs) prepared by a solution-based surface assembly demonstrated a potential capability as nonvolatile organic memory device with high ON/OFF switching ratios of 10 4. This level of performance could be achieved by modifying the ITO electrodes with some Ag-NDs that act as trapping sites, reducing the current in the OFF state. Based upon the observed electrical characteristics, the currents of the low-resistance state can be attributed to a tunneling through low-resistance pathways of metal particles originating from the metal top electrode in the organic layer and that the high-resistance state is controlled by charge trapping by the metal particles including Ag-NDs. In an alternative approach, complex films of AgNO3: hexaazatrinaphthylene derivatives were studied as the active layers for all-solution processed and air-stable organic memory devices. Rewritable memory effects were observed in the devices comprised of a thin polymer dielectric layer deposited on the bottom electrode, the complex film, and a conducting polymer film as the top electrode. The electrical characteristics indicate that the accumulation of Ag+ ions at the interface of the complex film and the top electrode may contribute to the switching effect.

Methodological comparison on hybrid nano organic solar cell fabrication

NASA Astrophysics Data System (ADS)

Vairavan, Rajendaran; Hambali, Nor Azura Malini Ahmad; Wahid, Mohamad Halim Abd; Retnasamy, Vithyacharan; Shahimin, Mukhzeer Mohamad

2018-02-01

The development of low cost solar cells has been the main focus in recent years. This has lead to the generation of photovoltaic cells based on hybrid of nanoparticle-organic polymer materials. This type of hybrid photovoltaic cells can overcome the problem of polymeric devices having low optical absorption and carrier mobilities. The hybrid cell has the potential of bridging the efficiency gap, which in present in organic and inorganic semiconductor materials. This project focuses on obtaining an hybrid active layer consisting of nanoparticles and organic polymer, to understand the parameter involved in obtaining this active layer and finally to investigate if the addition of nano particles in to the active layer could enhance the output of the hybrid solar cell. The hybrid active layer have will be deposited using the spin coating technique by using CdTe, CdS nano particles mixed with poly (2-methoxy,5-(2-ethyl-hexyloxy)-p-phenylvinylene)MEH-PPV.

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

1994-01-01

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Lattice matched semiconductor growth on crystalline metallic substrates

DOEpatents

Norman, Andrew G; Ptak, Aaron J; McMahon, William E

2013-11-05

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

Architectures for Improved Organic Semiconductor Devices

NASA Astrophysics Data System (ADS)

Beck, Jonathan H.

Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes, semiconductors and substrates compatible with low-temperature, flexible, and oxygenated and aromatic solvent-free fabrication. Materials and processes must be capable of future high volume production in order to enable low costs. In this thesis we explore several techniques to improve organic semiconductor device performance and enable new fabrication processes. In Chapter 2, I describe the integration of sub-optical-wavelength nanostructured electrodes that improve fill factor and power conversion efficiency in organic photovoltaic devices. Photovoltaic fill factor performance is one of the primary challenges facing organic photovoltaics because most organic semiconductors have poor charge mobility. Our electrical and optical measurements and simulations indicate that nanostructured electrodes improve charge extraction in organic photovoltaics. In Chapter 3, I describe a general method for maximizing the efficiency of organic photovoltaic devices by simultaneously optimizing light absorption and charge carrier collection. We analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of organic photovoltaic devices. This technique may be used to improve organic photovoltaic materials with low absorption, or short exciton diffusion and carrier-recombination lengths, opening up the device design space. In Chapter 4, I describe a process for high-quality graphene transfer onto chemically sensitive, weakly interacting organic semiconductor thin-films. Graphene is a promising flexible and highly transparent electrode for organic electronics; however, transferring graphene films onto organic semiconductor devices was previously impossible. We demonstrate a new transfer technique based on an elastomeric stamp coated with an fluorinated polymer release layer. We fabricate three classes of organic semiconductor devices: field effect transistors without high temperature annealing, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices.

High efficiency low cost thin film silicon solar cell design and method for making

DOEpatents

Sopori, B.L.

1999-04-27

A semiconductor device is described having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer. 9 figs.

Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}

DOEpatents

Mickelsen, R.A.; Chen, W.S.

1985-08-13

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2

DOEpatents

Mickelsen, R.A.; Chen, W.S.

1982-06-15

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

Thin film photovoltaic device with multilayer substrate

DOEpatents

Catalano, Anthony W.; Bhushan, Manjul

1984-01-01

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

DOEpatents

Alivisatos, A. Paul; Colvin, Vickie

1996-01-01

An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

Tunnel barrier schottky

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Rongming; Cao, Yu; Li, Zijian

2018-02-20

A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

PubMed Central

Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J.; Chang, Robert P. H.; Facchetti, Antonio; Marks, Tobin J.

2015-01-01

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor–inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance. PMID:26080437

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

DOE PAGES

Zhou, Nanjia; Kim, Myung -Gil; Loser, Stephen; ...

2015-06-15

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor– inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactivemore » materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Lastly, continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.« less

Voltage-matched, monolithic, multi-band-gap devices

DOEpatents

Wanlass, Mark W.; Mascarenhas, Angelo

2006-08-22

Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a sting of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

Voltage-Matched, Monolithic, Multi-Band-Gap Devices

DOEpatents

Wanlass, M. W.; Mascarenhas, A.

2006-08-22

Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a string of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and second layer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.

Photovoltaic devices comprising zinc stannate buffer layer and method for making

DOEpatents

Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

2001-01-01

A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

Effect of oxide insertion layer on resistance switching properties of copper phthalocyanine

NASA Astrophysics Data System (ADS)

Joshi, Nikhil G.; Pandya, Nirav C.; Joshi, U. S.

2013-02-01

Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalocyanine (CuPc) film sandwiched between aluminum (Al) electrodes. Pronounced hysteresis in the I-V curves revealed a resistance switching with on-off ratio of the order of 85%. In order to control the charge injection in the CuPc, nanoscale indium oxide buffer layer was inserted to form Al/CuPc/In2O3/Al device. Analysis of I-V measurements revealed space charge limited switching conduction at the Al/CuPc interface. The traps in the organic layer and charge blocking by oxide insertion layer have been used to explain the absence of resistance switching in the oxide buffer layered memory device cell. Present study offer potential applications for CuPc organic semiconductor in low power non volatile resistive switching memory and logic circuits.

Large-area, laterally-grown epitaxial semiconductor layers

DOEpatents

Han, Jung; Song, Jie; Chen, Danti

2017-07-18

Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

Surface-segregated monolayers: a new type of ordered monolayer for surface modification of organic semiconductors.

PubMed

Wei, Qingshuo; Tajima, Keisuke; Tong, Yujin; Ye, Shen; Hashimoto, Kazuhito

2009-12-09

We report a new type of ordered monolayer for the surface modification of organic semiconductors. Fullerene derivatives with fluorocarbon chains ([6,6]-phenyl-C(61)-buryric acid 1H,1H-perfluoro-1-alkyl ester or FC(n)) spontaneously segregated as a monolayer on the surface of a [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) film during a spin-coating process from the mixture solutions, as confirmed by X-ray photoelectron spectroscopy (XPS). Ultraviolet photoelectron spectroscopy (UPS) showed the shift of ionization potentials (IPs) depending on the fluorocarbon chain length, indicating the formation of surface dipole moments. Surface-sensitive vibrational spectroscopy, sum frequency generation (SFG) revealed the ordered molecular orientations of the C(60) moiety in the surface FC(n) layers. The intensity of the SFG signals from FC(n) on the surface showed a clear odd-even effect when the length of the fluorocarbon chain was changed. This new concept of the surface-segregated monolayer provides a facile and versatile approach to modifying the surface of organic semiconductors and is applicable to various organic optoelectronic devices.

An organic p-type dopant with high thermal stability for an organic semiconductor.

PubMed

Gao, Zhi Qiang; Mi, Bao Xiu; Xu, Gui Zhen; Wan, Yi Qian; Gong, Meng Lian; Cheah, Kok Wai; Chen, Chin H

2008-01-07

To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.

340 Ghz Multipixel Transceiver

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam (Inventor); Cooper, Ken B. (Inventor); Decrossas, Emmanuel (Inventor); Gill, John J. (Inventor); Jung-Kubiak, Cecile (Inventor); Lee, Choonsup (Inventor); Lin, Robert (Inventor); Mehdi, Imran (Inventor); Peralta, Alejandro (Inventor); Reck, Theodore (Inventor)

2017-01-01

A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.

Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

DOEpatents

Yang, Liyou

1993-10-26

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

Hole mobility in various transition-metal-oxides doped organic semiconductor films

NASA Astrophysics Data System (ADS)

Yoo, Seung-Jun; Lee, Jeong-Hwan; Kim, Jae-Min; Kim, Jang-Joo

2017-01-01

Hole mobility in various p-doped organic semiconductors possessing different energetic disorder parameters in low-to-moderate doping range is reported. The hole mobility is reduced by orders of magnitude and converged to 10-7-10-6 cm2/Vs at a doping concentration of 5 mol. % for all the materials, even though the pristine organic films possess orders of magnitude of different mobilities from 10-5 to 10-3 cm2/Vs. These results indicate that the ionized dopants behave as traps for generated carriers to reduce the mobility. Further increase in the doping concentration either increases or decreases the mobility depending on the energetic disorder parameters of the organic films. These phenomena are interpreted based on the Coulomb trap depth of the ionized dopants and energetic disorder of the host layers.

Back contact buffer layer for thin-film solar cells

DOEpatents

Compaan, Alvin D.; Plotnikov, Victor V.

2014-09-09

A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

Inverted organic electronic and optoelectronic devices

NASA Astrophysics Data System (ADS)

Small, Cephas E.

The research and development of organic electronics for commercial application has received much attention due to the unique properties of organic semiconductors and the potential for low-cost high-throughput manufacturing. For improved large-scale processing compatibility and enhanced device stability, an inverted geometry has been employed for devices such as organic light emitting diodes and organic photovoltaic cells. These improvements are attributed to the added flexibility to incorporate more air-stable materials into the inverted device geometry. However, early work on organic electronic devices with an inverted geometry typically showed reduced device performance compared to devices with a conventional structure. In the case of organic light emitting diodes, inverted devices typically show high operating voltages due to insufficient carrier injection. Here, a method for enhancing hole injection in inverted organic electronic devices is presented. By incorporating an electron accepting interlayer into the inverted device, a substantial enhancement in hole injection efficiency was observed as compared to conventional devices. Through a detailed carrier injection study, it is determined that the injection efficiency enhancements in the inverted devices are due to enhanced charge transfer at the electron acceptor/organic semiconductor interface. A similar situation is observed for organic photovoltaic cells, in which devices with an inverted geometry show limited carrier extraction in early studies. In this work, enhanced carrier extraction is demonstrated for inverted polymer solar cells using a surface-modified ZnO-polymer composite electron-transporting layer. The insulating polymer in the composite layer inhibited aggregation of the ZnO nanoparticles, while the surface-modification of the composite interlayer improved the electronic coupling with the photoactive layer. As a result, inverted polymer solar cells with power conversion efficiencies of over 8% were obtained. To further study carrier extraction in inverted polymer solar cells, the active layer thickness dependence of the efficiency was investigated. For devices with active layer thickness < 200 nm, power conversion efficiencies over 8% was obtained. This result is important for demonstrating improved large-scale processing compatibility. Above 200 nm, significant reduction in cell efficiency were observed. A detailed study of the loss processes that contributed to the reduction in efficiency for thick-film devices are presented.

Final Scientific/Technical Report -- Single-Junction Organic Solar Cells with >15% Efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Starkenburg, Daken; Weldeab, Asmerom; Fagnani, Dan

Organic solar cells have the potential to offer low-cost solar energy conversion due to low material costs and compatibility with low-temperature and high throughput manufacturing processes. This project aims to further improve the efficiency of organic solar cells by applying a previously demonstrated molecular self-assembly approach to longer-wavelength light-absorbing organic materials. The team at the University of Florida designed and synthesized a series of low-bandgap organic semiconductors with functional hydrogen-bonding groups, studied their assembly characteristics and optoelectronic properties in solid-state thin film, and fabricated organic solar cells using solution processing. These new organic materials absorb light up 800 nm wavelength,more » and provide a maximum open-circuit voltage of 1.05 V in the resulted solar cells. The results further confirmed the effectiveness in this approach to guide the assembly of organic semiconductors in thin films to yield higher photovoltaic performance for solar energy conversion. Through this project, we have gained important understanding on designing, synthesizing, and processing organic semiconductors that contain appropriately functionalized groups to control the morphology of the organic photoactive layer in solar cells. Such fundamental knowledge could be used to further develop new functional organic materials to achieve higher photovoltaic performance, and contribute to the eventual commercialization of the organic solar cell technology.« less

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

DOEpatents

Mickelsen, Reid A.; Chen, Wen S.

1982-01-01

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

DOEpatents

Mickelsen, Reid A [Bellevue, WA; Chen, Wen S [Seattle, WA

1985-08-13

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Photoactivated and patternable charge transport materials and their use in organic light-emitting devices

NASA Astrophysics Data System (ADS)

Liu, Jie; Lewis, Larry N.; Duggal, Anil R.

2007-06-01

Organic light-emitting devices (OLEDs) usually employ at least one organic semiconductor layer that acts as a hole-injection material. The prototypical example is a conjugated polymer such as poly(3,4-ethylenedioxythiophene) heavily p doped with polystyrene sulfonic acid. Here, the authors describe a chemical doping strategy for hole injection material formulation that enables spatial patterning of the material conductivity through optical activation. The strategy utilizes an organic photoacid generator (PAG) dispersed in a polymeric organic semiconductor host. Upon UV irradiation, the PAG decomposes and generates a strong protonic acid that subsequently p dopes the host. The authors demonstrate an OLED made with such a light-activated hole-injection material and show that arbitrary emission patterning can be accomplished. This approach may provide a simple, low cost path toward specialty lighting and signage applications for OLED technology.

Material growth and characterization for solid state devices

NASA Technical Reports Server (NTRS)

Collis, Ward J.; Abul-Fadl, Ali; Iyer, Shanthi

1988-01-01

During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used to grow ternary and quaternary alloy III-V semiconductor thin films. Selective area growth of InGaAs was performed on InP substrates using a patterned sputtered quartz or spin-on glass layer. The etch back and growth characteristics with respect to substrate orientation were investigated. The etch back behavior is somewhat different from wet chemical etching with respect to the sidewall profiles which are observed. LPEE was also employed to grow epitaxial layers of InGaAsP alloys on InP substrates. The behavior of Mn as an acceptor dopant was investigated with low temperature Hall coefficient and photoluminescence measurements. A metal-organic vapor phase epitaxy system was partially complete within the grant period. This atmospheric pressure system will be used to deposit III-V compound and alloy semiconductor layers in future research efforts.

Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

DOEpatents

Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

2015-05-26

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/

DOEpatents

Osbourn, G.C.

1983-10-06

An intrinsic semiconductor electro-optical device comprises a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8 to 12 ..mu..m. This radiation responsive p-n junction comprises a strained-layer superlattice (SLS) of alternating layers of two different III-V semiconductors. The lattice constants of the two semiconductors are mismatched, whereby a total strain is imposed on each pair of alternating semiconductor layers in the SLS structure, the proportion of the total strain which acts on each layer of the pair being proportional to the ratio of the layer thicknesses of each layer in the pair.

Plasmon absorption modulator systems and methods

DOEpatents

Kekatpure, Rohan Deodatta; Davids, Paul

2014-07-15

Plasmon absorption modulator systems and methods are disclosed. A plasmon absorption modulator system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and a metal layer formed on a top surface of the stack of quantum well layers. A method for modulating plasmonic current includes enabling propagation of the plasmonic current along a metal layer, and applying a voltage across the stack of quantum well layers to cause absorption of a portion of energy of the plasmonic current by the stack of quantum well layers. A metamaterial switching system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and at least one metamaterial structure formed on a top surface of the stack of quantum well layers.

Doped bottom-contact organic field-effect transistors

NASA Astrophysics Data System (ADS)

Liu, Shiyi; Billig, Paul; Al-Shadeedi, Akram; Kaphle, Vikash; Lüssem, Björn

2018-07-01

The influence of doping on doped bottom-gate bottom-contact organic field-effect transistors (OFETs) is discussed. It is shown that the inclusion of a doped layer at the dielectric/organic semiconductor layer leads to a significant reduction in the contact resistances and a fine control of the threshold voltage. Through varying the thickness of the doped layer, a linear shift of threshold voltage V T from ‑3.1 to ‑0.22 V is observed for increasing thickness of doped layer. Meanwhile, the contact resistance at the source and drain electrode is reduced from 138.8 MΩ at V GS = ‑10 V for 3 nm to 0.3 MΩ for 7 nm thick doped layers. Furthermore, an increase of charge mobility is observed for increasing thickness of doped layer. Overall, it is shown that doping can minimize injection barriers in bottom-contact OFETs with channel lengths in the micro-meter regime, which has the potential to increase the performance of this technology further.

Photoresponse and photo-induced memory effect in the organic field-effect transistor based on AlOX nanoparticles at the interface of semiconductor/dielectric

NASA Astrophysics Data System (ADS)

Cheng, Yunfei; Wang, Wu

2017-10-01

In this work, the photoresponse and photo-induced memory effect were demonstrated in an organic field-effect transistor (OFET) with semiconductor pentacene and SiO2 as the active and gate dielectric layers, respectively. By inserting AlOX nanoparticles (NPs) at the interface of pentacene/SiO2, obvious enhancing photoresponse was obtained in the OFET with the maximum responsivity and photosensitivity of about 15 A/W and 100, respectively. Moreover, the stable photoinduced memory effect was achieved in the OFET, attributing to the photogenerated electrons captured by the interface traps of the AlOX NPs/SiO2.

Hybrid organic–inorganic porous semiconductor transducer for multi-parameters sensing

PubMed Central

Caliò, Alessandro; Cassinese, Antonio; Casalino, Maurizio; Rea, Ilaria; Barra, Mario; Chiarella, Fabio; De Stefano, Luca

2015-01-01

Porous silicon (PSi) non-symmetric multi-layers are modified by organic molecular beam deposition of an organic semiconductor, namely the N,N′-1H,1H-perfluorobutyldicyanoperylene-carboxydi-imide (PDIF-CN2). Joule evaporation of PDIF-CN2 into the PSi sponge-like matrix not only improves but also adds transducing skills, making this solid-state device a dual signal sensor for chemical monitoring. PDIF-CN2 modified PSi optical microcavities show an increase of about five orders of magnitude in electric current with respect to the same bare device. This feature can be used to sense volatile substances. PDIF-CN2 also improves chemical resistance of PSi against alkaline and acid corrosion. PMID:26063814

Hybrid organic-inorganic porous semiconductor transducer for multi-parameters sensing.

PubMed

Caliò, Alessandro; Cassinese, Antonio; Casalino, Maurizio; Rea, Ilaria; Barra, Mario; Chiarella, Fabio; De Stefano, Luca

2015-07-06

Porous silicon (PSi) non-symmetric multi-layers are modified by organic molecular beam deposition of an organic semiconductor, namely the N,N'-1H,1H-perfluorobutyldicyanoperylene-carboxydi-imide (PDIF-CN2). Joule evaporation of PDIF-CN2 into the PSi sponge-like matrix not only improves but also adds transducing skills, making this solid-state device a dual signal sensor for chemical monitoring. PDIF-CN2 modified PSi optical microcavities show an increase of about five orders of magnitude in electric current with respect to the same bare device. This feature can be used to sense volatile substances. PDIF-CN2 also improves chemical resistance of PSi against alkaline and acid corrosion. © 2015 The Author(s) Published by the Royal Society. All rights reserved.

Molecular Imaging of Ultrathin Pentacene Films: Evidence for Homoepitaxy

NASA Astrophysics Data System (ADS)

Wu, Yanfei; Haugstad, Greg; Frisbie, C. Daniel

2013-03-01

Ultrathin polycrystalline films of organic semiconductors have received intensive investigations due to the critical role they play in governing the performance of organic thin film transistors. In this work, a variety of scanning probe microscopy (SPM) techniques have been employed to investigate ultrathin polycrystalline films (1-3 nm) of the benchmark organic semiconductor pentacene. By using spatially resolved Friction Force Microscopy (FFM), Kelvin Probe Force Microscopy (KFM) and Electrostatic Force Microscopy (EFM), an interesting multi-domain structure is revealed within the second layer of the films, characterized as two distinct friction and surface potential domains correlating with each other. The existence of multiple homoepitaxial modes within the films is thus proposed and examined. By employing lattice-revolved imaging using contact mode SPM, direct molecular evidence for the unusual homoepitaxy is obtained.

Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering

DOE PAGES

Kowarik, S.; Hinderhofer, A.; Wang, C.; ...

2015-11-30

Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs) of the organic semiconductors pentacene (PEN) and perfluoro-pentacene (PFP). Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ~ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findingsmore » are important for the development of novel organic quantum optoelectronic devices.« less

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, Olga B.; Lear, Kevin L.

1998-01-01

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Surface preparation of substances for continuous convective assembly of fine particles

DOEpatents

Rossi, Robert

2003-01-01

A method for producing periodic nanometer-scale arrays of metal or semiconductor junctions on a clean semiconductor substrate surface is provided comprising the steps of: etching the substrate surface to make it hydrophilic, forming, under an inert atmosphere, a crystalline colloid layer on the substrate surface, depositing a metal or semiconductor material through the colloid layer onto the surface of the substrate, and removing the colloid from the substrate surface. The colloid layer is grown on the clean semiconductor surface by withdrawing the semiconductor substrate from a sol of colloid particles.

Thin-film solar cell fabricated on a flexible metallic substrate

DOEpatents

Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

2006-05-30

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate

DOEpatents

Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

2006-05-30

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE.

PubMed

Li, Xin; Jordan, Matthew B; Ayari, Taha; Sundaram, Suresh; El Gmili, Youssef; Alam, Saiful; Alam, Muhbub; Patriarche, Gilles; Voss, Paul L; Paul Salvestrini, Jean; Ougazzaden, Abdallah

2017-04-11

Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties were carefully characterized and discussed. The thick layers exhibited strong band-edge absorption near 215 nm. A highly oriented two-dimensional h-BN structure was formed at the film/sapphire interface, which permitted an effective exfoliation of the thick BN film onto other adhesive supports. And this structure resulted in a metal-semiconductor-metal (MSM) device prototype fabricated on BN membrane delaminating from the substrate. MSM photodiode prototype showed low dark current of 2 nA under 100 V, and 100 ± 20% photoconductivity yield for deep UV light illumination. These wafer-scale MOVPE-grown thick BN layers present great potential for the development of deep UV photodetection applications, and even for flexible (opto-) electronics in the future.

Interconnected semiconductor devices

DOEpatents

Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

1990-10-23

Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

Bar-Coated Ultrathin Semiconductors from Polymer Blend for One-Step Organic Field-Effect Transistors.

PubMed

Ge, Feng; Liu, Zhen; Lee, Seon Baek; Wang, Xiaohong; Zhang, Guobing; Lu, Hongbo; Cho, Kilwon; Qiu, Longzhen

2018-06-27

One-step deposition of bi-functional semiconductor-dielectric layers for organic field-effect transistors (OFETs) is an effective way to simplify the device fabrication. However, the proposed method has rarely been reported in large-area flexible organic electronics. Herein, we demonstrate wafer-scale OFETs by bar coating the semiconducting and insulating polymer blend solution in one-step. The semiconducting polymer poly(3-hexylthiophene) (P3HT) segregates on top of the blend film, whereas dielectric polymethyl methacrylate (PMMA) acts as the bottom layer, which is achieved by a vertical phase separation structure. The morphology of blend film can be controlled by varying the concentration of P3HT and PMMA solutions. The wafer-scale one-step OFETs, with a continuous ultrathin P3HT film of 2.7 nm, exhibit high electrical reproducibility and uniformity. The one-step OFETs extend to substrate-free arrays that can be attached everywhere on varying substrates. In addition, because of the well-ordered molecular arrangement, the moderate charge transport pathway is formed, which resulted in stable OFETs under various organic solvent vapors and lights of different wavelengths. The results demonstrate that the one-step OFETs have promising potential in the field of large-area organic wearable electronics.

Thermally robust semiconductor optical amplifiers and laser diodes

DOEpatents

Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

2002-01-01

A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

Unitary lens semiconductor device

DOEpatents

Lear, Kevin L.

1997-01-01

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

PubMed Central

Nguyen, Ky V.; Payne, Marcia M.; Anthony, John E.; Lee, Jung Hun; Song, Eunjoo; Kang, Boseok; Cho, Kilwon; Lee, Wi Hyoung

2016-01-01

Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence on device performance, a substantial number of studies have been devoted to controlling the crystallization characteristics of organic semiconductors. We studied the intrinsic effects of GBs within 5,11-bis(triethylsilylethynyl) anthradithiophene (TES-ADT) thin films on the electrical properties of OFETs. The GB density was easily changed by controlling nulceation event in TES-ADT thin films. When the mixing time was increased, the number of aggregates in as-spun TES-ADT thin films were increased and subsequent exposure of the films to 1,2-dichloroethane vapor led to a significant increase in the number of nuleation sites, thereby increasing the GB density of TES-ADT spherulites. The density of GBs strongly influences the angular spread and crystallographic orientation of TES-ADT spherulites. Accordingly, the FETs with higher GB densities showed much poorer electrical characteristics than devices with lower GB density. Especially, GBs provide charge trapping sites which are responsible for bias-stress driven electrical instability. Dielectric surface treatment with a polystyrene brush layer clarified the GB-induced charge trapping by reducing charge trapping at the semiconductor-dielectric interface. Our study provides an understanding on GB induced bias instability for the development of high performance OFETs. PMID:27615358

Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors.

PubMed

Nguyen, Ky V; Payne, Marcia M; Anthony, John E; Lee, Jung Hun; Song, Eunjoo; Kang, Boseok; Cho, Kilwon; Lee, Wi Hyoung

2016-09-12

Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence on device performance, a substantial number of studies have been devoted to controlling the crystallization characteristics of organic semiconductors. We studied the intrinsic effects of GBs within 5,11-bis(triethylsilylethynyl) anthradithiophene (TES-ADT) thin films on the electrical properties of OFETs. The GB density was easily changed by controlling nulceation event in TES-ADT thin films. When the mixing time was increased, the number of aggregates in as-spun TES-ADT thin films were increased and subsequent exposure of the films to 1,2-dichloroethane vapor led to a significant increase in the number of nuleation sites, thereby increasing the GB density of TES-ADT spherulites. The density of GBs strongly influences the angular spread and crystallographic orientation of TES-ADT spherulites. Accordingly, the FETs with higher GB densities showed much poorer electrical characteristics than devices with lower GB density. Especially, GBs provide charge trapping sites which are responsible for bias-stress driven electrical instability. Dielectric surface treatment with a polystyrene brush layer clarified the GB-induced charge trapping by reducing charge trapping at the semiconductor-dielectric interface. Our study provides an understanding on GB induced bias instability for the development of high performance OFETs.

Field-Induced Disorder and Carrier Localization in Molecular Organic Transistors

NASA Astrophysics Data System (ADS)

Ando, M.; Minakata, T.; Duffy, C.; Sirringhaus, H.

2009-06-01

We propose a "field-induced polymorphous disorder" model to explain bias-stress instability in molecular organic thin-film transistors, based on the experimental results showing the strong correlation between the micro-structural change in semiconductor layer composed of penrtacene molecules and the threshold voltage (Vth) shift due to electron trapping in a reversible manner under the successive bias-stress, thermal annealing, and light irradiation.

Solar cells with low cost substrates and process of making same

DOEpatents

Mitchell, Kim W.

1984-01-01

A solar cell having a substrate and an intermediate recrystallized film and a semiconductor material capable of absorbing light with the substrate being selected from one of a synthetic organic resin, graphite, glass and a crystalline material having a grain size less than about 1 micron.sup.2. The intermediate recrystallized film has a grain size in the range of from about 10 microns.sup.2 to about 10,000 microns.sup.2 and a lattice mismatch with the semiconductor material not greater than about 4%. The semiconductor material has a grain size not less than about 10 microns.sup.2. An anti-reflective layer and electrical contact means are provided. Also disclosed is a subcombination of substrate, intermediate recrystallized film and semiconductor material. Also, methods of formulating the solar cell and subcombination are disclosed.

Solar cells with low cost substrates, process of making same and article of manufacture

DOEpatents

Mitchell, K.W.

A solar cell is disclosed having a substrate and an intermediate recrystallized film and a semiconductor material capable of absorbing light with the substrate being selected from one of a synthetic organic resin, graphite, glass and a crystalline material having a grain size less than about 1 micron/sup 2/. The intermediate recrystallized film has a grain size in the range of from about 10 microns/sup 2/ to about 10,000 microns/sup 2/ and a lattice mismatch with the semiconductor material not greater than about 4%. The semiconductor material has a grain size not less than about 10 microns/sup 2/. An anti-reflective layer and electrical contact means are provided. Also disclosed is a subcombination of substrate, intermediate recrystallized film and semiconductor material. Also, methods of formulating the solar cell and subcombination are disclosed.

Method for depositing high-quality microcrystalline semiconductor materials

DOEpatents

Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

2011-03-08

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Unitary lens semiconductor device

DOEpatents

Lear, K.L.

1997-05-27

A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

Low temperature production of large-grain polycrystalline semiconductors

DOEpatents

Naseem, Hameed A [Fayetteville, AR; Albarghouti, Marwan [Loudonville, NY

2007-04-10

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors.

PubMed

Bu, Laju; Hu, Mengxing; Lu, Wanlong; Wang, Ziyu; Lu, Guanghao

2018-01-01

Source-semiconductor-drain coplanar transistors with an organic semiconductor layer located within the same plane of source/drain electrodes are attractive for next-generation electronics, because they could be used to reduce material consumption, minimize parasitic leakage current, avoid cross-talk among different devices, and simplify the fabrication process of circuits. Here, a one-step, drop-casting-like printing method to realize a coplanar transistor using a model semiconductor/insulator [poly(3-hexylthiophene) (P3HT)/polystyrene (PS)] blend is developed. By manipulating the solution dewetting dynamics on the metal electrode and SiO 2 dielectric, the solution within the channel region is selectively confined, and thus make the top surface of source/drain electrodes completely free of polymers. Subsequently, during solvent evaporation, vertical phase separation between P3HT and PS leads to a semiconductor-insulator bilayer structure, contributing to an improved transistor performance. Moreover, this coplanar transistor with semiconductor-insulator bilayer structure is an ideal system for injecting charges into the insulator via gate-stress, and the thus-formed PS electret layer acts as a "nonuniform floating gate" to tune the threshold voltage and effective mobility of the transistors. Effective field-effect mobility higher than 1 cm 2 V -1 s -1 with an on/off ratio > 10 7 is realized, and the performances are comparable to those of commercial amorphous silicon transistors. This coplanar transistor simplifies the fabrication process of corresponding circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Deposit heterogeneity and the dynamics of the organic semiconductors P3HT and PCBM solution under evaporation

NASA Astrophysics Data System (ADS)

Yu, H. P.; Luo, H.; Liu, T. T.; Jing, G. Y.

2015-04-01

The formation of organic semiconductor layer is the key procedure in the manufacture of organic photovoltaic solar cell, in which the natural evaporation of the solvent from the polymer solution plays the essential role for the conversion efficiency. Here, poly(3-hexylthiophene) (P3HT) and fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), as two types of semiconductor polymers, were selected as the active layer to form the deposit by drying the blend solution drops on the substrate. We explored the influences of droplet size and solute concentration on the homogeneity of the deposit. Additionally, the spatial distribution of molecular chains and grains and the instability of the droplet morphology during the drying were investigated. The results showed that the "coffee-ring" phenomenon occurred forming an annular deposit at the outermost edge and the width of the annular ring increased linearly with the concentration of the P3HT solution, until a saturation plateau is approached. On the other hand, the PCBM deposition presented a circular disk at low concentration, but displayed a sudden instability for an irregular perimeter at a critical concentration and there existed a second critical concentration above which the deposit exhibited the return of the stable circular shape. The results have an instructive impact on the performance of the device and the formation of fine structures during the process of printing, film preparation and painting.

Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask

NASA Technical Reports Server (NTRS)

Morrison, Andrew D. (Inventor); Daud, Taher (Inventor)

1986-01-01

A method for growing a high purity, low defect layer of semiconductor is described. This method involves depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities. The process can be iterated and the mask translated to further improve the quality of grown layers.

Laser pumping of thyristors for fast high current rise-times

DOEpatents

Glidden, Steven C.; Sanders, Howard D.

2013-06-11

An optically triggered semiconductor switch includes an anode metallization layer; a cathode metallization layer; a semiconductor between the anode metallization layer and the cathode metallization layer and a photon source. The semiconductor includes at least four layers of alternating doping in the form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode and in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light. The photon source emits light having a wavelength, with the light from the photon source being configured to match the window pattern of the anode metallization layer.

Evidence of thermal transport anisotropy in stable glasses of vapor deposited organic molecules

NASA Astrophysics Data System (ADS)

Ràfols-Ribé, Joan; Dettori, Riccardo; Ferrando-Villalba, Pablo; Gonzalez-Silveira, Marta; Abad, Llibertat; Lopeandía, Aitor F.; Colombo, Luciano; Rodríguez-Viejo, Javier

2018-03-01

Vapor deposited organic glasses are currently in use in many optoelectronic devices. Their operation temperature is limited by the glass transition temperature of the organic layers and thermal management strategies become increasingly important to improve the lifetime of the device. Here we report the unusual finding that molecular orientation heavily influences heat flow propagation in glassy films of small molecule organic semiconductors. The thermal conductivity of vapor deposited thin-film semiconductor glasses is anisotropic and controlled by the deposition temperature. We compare our data with extensive molecular dynamics simulations to disentangle the role of density and molecular orientation on heat propagation. Simulations do support the view that thermal transport along the backbone of the organic molecule is strongly preferred with respect to the perpendicular direction. This is due to the anisotropy of the molecular interaction strength that limits the transport of atomic vibrations. This approach could be used in future developments to implement small molecule glassy films in thermoelectric or other organic electronic devices.

Conductivity Modifications of Graphene by Electron Donative Organic Molecules

NASA Astrophysics Data System (ADS)

Masujima, Hiroaki; Mori, Takehiko; Hayamizu, Yuhei

2017-07-01

Graphene has been studied for the application of transparent electrodes in flexible electrical devices with semiconductor organics. Control of the charge carrier density in graphene is crucial to reduce the contact resistance between graphene and the active layer of organic semiconductor. Chemical doping of graphene is an approach to change the carrier density, where the adsorbed organic molecules donate or accept electrons form graphene. While various acceptor organic molecules have been demonstrated so far, investigation about donor molecules is still poor. In this work, we have investigated doping effect in graphene field-effect transistors functionalized by organic donor molecules such as dibenzotetrathiafulvalene (DBTTF), hexamethyltetrathiafulvalene (HMTTF), 1,5-diaminonaphthalene (DAN), and N, N, N', N'-tetramethyl- p-phenylenediamine (TMPD). Based on conductivity measurements of graphene transistors, the former three molecules do not have any significant effect to graphene transistors. However, TMPD shows effective n-type doping. The doping effect has a correlation with the level of highest occupied molecular orbital (HOMO) of each molecule, where TMPD has the highest HOMO level.

Optical devices featuring textured semiconductor layers

DOEpatents

Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

2011-10-11

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Optical devices featuring textured semiconductor layers

DOEpatents

Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

2012-08-07

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Back-side readout semiconductor photomultiplier

DOEpatents

Choong, Woon-Seng; Holland, Stephen E

2014-05-20

This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

Sintered silver joints via controlled topography of electronic packaging subcomponents

DOEpatents

Wereszczak, Andrew A.

2014-09-02

Disclosed are sintered silver bonded electronic package subcomponents and methods for making the same. Embodiments of the sintered silver bonded EPSs include topography modification of one or more metal surfaces of semiconductor devices bonded together by the sintered silver joint. The sintered silver bonded EPSs include a first semiconductor device having a first metal surface, the first metal surface having a modified topography that has been chemically etched, grit blasted, uniaxial ground and/or grid sliced connected to a second semiconductor device which may also include a first metal surface with a modified topography, a silver plating layer on the first metal surface of the first semiconductor device and a silver plating layer on the first metal surface of the second semiconductor device and a sintered silver joint between the silver plating layers of the first and second semiconductor devices which bonds the first semiconductor device to the second semiconductor device.

Method for fabricating an interconnected array of semiconductor devices

DOEpatents

Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

1989-10-10

Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

High-resolution parallel-detection sensor array using piezo-phototronics effect

DOEpatents

Wang, Zhong L.; Pan, Caofeng

2015-07-28

A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.

Solid state radiative heat pump

DOEpatents

Berdahl, P.H.

1984-09-28

A solid state radiative heat pump operable at room temperature (300 K) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of change carriers as compared equilibrium. In one form of the invention an infrared semiconductor photodiode is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention, a homogenous semiconductor is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation the active surface of the semiconductor are disclosed. In one method, an anti-refection layer is coated into the active surface of the semiconductor, the anti-reflection layer having an index of refraction equal to the square root of that of the semiconductor. In the second method, a passive layer is speaced trom the active surface of the semiconductor by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler with a paraboloid reflecting surface surface is in contact with the active surface of the semiconductor, the coupler having an index of refraction about the same as that of the semiconductor.

Fused Methoxynaphthyl Phenanthrimidazole Semiconductors as Functional Layer in High Efficient OLEDs.

PubMed

Jayabharathi, Jayaraman; Ramanathan, Periyasamy; Karunakaran, Chockalingam; Thanikachalam, Venugopal

2016-01-01

Efficient hole transport materials based on novel fused methoxynaphthyl phenanthrimidazole core structure were synthesised and characterized. Their device performances in phosphorescent organic light emitting diodes were investigated. The high thermal stability in combination with the reversible oxidation process made promising candidates as hole-transporting materials for organic light-emitting devices. Highly efficient Alq3-based organic light emitting devices have been developed using phenanthrimidazoles as functional layers between NPB [4,4-bis(N-(1-naphthyl)-N-phenylamino)biphenyl] and Alq3 [tris(8-hydroxyquinoline)aluminium] layers. Using the device of ITO/NPB/4/Alq3/LiF/Al, a maximum luminous efficiency of 5.99 cd A(-1) was obtained with a maximum brightness of 40,623 cd m(-2) and a power efficiency of 5.25 lm W(-1).

Structure and transport in organic semiconductor thin films

NASA Astrophysics Data System (ADS)

Vos, Sandra Elizabeth Fritz

Organic Semiconductors represent an exciting area of research due to their potential application in cheap and flexible electronics. In spite of the abundant interest in organic electronics the electronic transport mechanism remains poorly understood. Understanding the connection between molecular structure, crystal packing, intermolecular interactions and electronic delocalization is an important aspect of improving the transport properties of organics in thin film transistors (TFTs). In an organic thin film transistor, charge carrier transport is believed to occur within the first few monolayers of the organic material adjacent to the dielectric. It is therefore critical to understand the initial stages of film growth and molecular structure in these first few layers and relate this structure to electronic transport properties. The structure of organic films at the interface with an amorphous silicon dioxide ( a-SiO2) dielectric and how structure relates to transport in a TFT is the focus of this thesis. Pentacene films on a-SiO2 were extensively characterized with specular and in-plane X-ray diffraction, and CuKalpha1, and synchrotron radiation. The first layer of pentacene molecules adjacent to the a-SiO2 crystallized in a rectangular unit cell with the long axis of the molecules perpendicular to the substrate surface. Subsequent layers of pentacene crystallized in a slightly oblique in-plane unit cell that evolved as thickness was increased. The rectangular monolayer phase of pentacene did not persist when subsequent layers were deposited. Specular diffraction with Synchrotron radiation of a 160 A pentacene film (˜ 10 layers) revealed growth initiation of a bulk-like phase and persistence of the thin-film phase. Pentacene molecules were more tilted in the bulk-like phase and the in-plane unit cell was slightly more oblique. Pentacene grains began to grow randomly oriented with respect to the substrate surface (out-of-plane) in films near 650 A in thickness. The single crystal bulk phase of pentacene was observed from specular diffraction (CuKalpha1) of a 2.5 mum film. These results suggest that the thickness of pentacene films on a-SiO2 is an important aspect in the comparison of crystal structure and electronic transport.

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

DOEpatents

Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.

1984-04-19

In a field-effect transistor comprising a semiconductor having therein a source, a drain, a channel and a gate in operational relationship, there is provided an improvement wherein said semiconductor is a superlattice comprising alternating quantum well and barrier layers, the quantum well layers comprising a first direct gap semiconductor material which in bulk form has a certain bandgap and a curve of electron velocity versus applied electric field which has a maximum electron velocity at a certain electric field, the barrier layers comprising a second semiconductor material having a bandgap wider than that of said first semiconductor material, wherein the layer thicknesses of said quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice having a curve of electron velocity versus applied electric field which has a maximum electron velocity at a certain electric field, and wherein the thicknesses of said quantum well layers are selected to provide a superlattice curve of electron velocity versus applied electric field whereby, at applied electric fields higher than that at which the maximum electron velocity occurs in said first material when in bulk form, the electron velocities are higher in said superlattice than they are in said first semiconductor material in bulk form.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, O.B.; Lear, K.L.

1998-03-10

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Organic Donor-Acceptor Complexes as Novel Organic Semiconductors.

PubMed

Zhang, Jing; Xu, Wei; Sheng, Peng; Zhao, Guangyao; Zhu, Daoben

2017-07-18

Organic donor-acceptor (DA) complexes have attracted wide attention in recent decades, resulting in the rapid development of organic binary system electronics. The design and synthesis of organic DA complexes with a variety of component structures have mainly focused on metallicity (or even superconductivity), emission, or ferroelectricity studies. Further efforts have been made in high-performance electronic investigations. The chemical versatility of organic semiconductors provides DA complexes with a great number of possibilities for semiconducting applications. Organic DA complexes extend the semiconductor family and promote charge separation and transport in organic field-effect transistors (OFETs) and organic photovoltaics (OPVs). In OFETs, the organic complex serves as an active layer across extraordinary charge pathways, ensuring the efficient transport of induced charges. Although an increasing number of organic semiconductors have been reported to exhibit good p- or n-type properties (mobilities higher than 1 or even 10 cm 2 V -1 s -1 ), critical scientific challenges remain in utilizing the advantages of existing semiconductor materials for more and wider applications while maintaining less complicated synthetic or device fabrication processes. DA complex materials have revealed new insight: their unique molecular packing and structure-property relationships. The combination of donors and acceptors could offer practical advantages compared with their unimolecular materials. First, growing crystals of DA complexes with densely packed structures will reduce impurities and traps from the self-assembly process. Second, complexes based on the original structural components could form superior mixture stacking, which can facilitate charge transport depending on the driving force in the coassembly process. Third, the effective use of organic semiconductors can lead to tunable band structures, allowing the operation mode (p- or n-type) of the transistor to be systematically controlled by changing the components. Finally, theoretical calculations based on cocrystals with unique stacking could widen our understanding of structure-property relationships and in turn help us design high-performance semiconductors based on DA complexes. In this Account, we focus on discussing organic DA complexes as a new class of semiconducting materials, including their design, growth methods, packing modes, charge-transport properties, and structure-property relationships. We have also fabricated and investigated devices based on these binary crystals. This interdisciplinary work combines techniques from the fields of self-assembly, crystallography, condensed-matter physics, and theoretical chemistry. Researchers have designed new complex systems, including donor and acceptor compounds that self-assemble in feasible ways into highly ordered cocrystals. We demonstrate that using this crystallization method can easily realize ambipolar or unipolar transport. To further improve device performance, we propose several design strategies, such as using new kinds of donors and acceptors, modulating the energy alignment of the donor (ionization potential, IP) and acceptor (electron affinity, EA) components, and extending the π-conjugated backbones. In addition, we have found that when we use molecular "doping" (2:1 cocrystallization), the charge-transport nature of organic semiconductors can be switched from hole-transport-dominated to electron-transport-dominated. We expect that the formation of cocrystals through the complexation of organic donor and acceptor species will serve as a new strategy to develop semiconductors for organic electronics with superior performances over their corresponding individual components.

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.; Sheldon, Peter; Rose, Douglas H.

1999-01-01

A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

Porous silicon carbide (SiC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory.

PubMed

Li, Wen; Guo, Fengning; Ling, Haifeng; Liu, Hui; Yi, Mingdong; Zhang, Peng; Wang, Wenjun; Xie, Linghai; Huang, Wei

2018-01-01

In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG 3 ) is reported. The WG 3 NSs are prepared from phase separation by spin-coating blend solutions of WG 3 /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG 3 film, the device based on WG 3 NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10 4 s), and reliable switching properties. A quantitative study of the WG 3 NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG 3 NSs and pentacene layer. This versatile solution-processing approach to preparing WG 3 NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Assembly, Structure, and Functionality of Metal-Organic Networks and Organic Semiconductor Layers at Surfaces

NASA Astrophysics Data System (ADS)

Tempas, Christopher D.

Self-assembled nanostructures at surfaces show promise for the development of next generation technologies including organic electronic devices and heterogeneous catalysis. In many cases, the functionality of these nanostructures is not well understood. This thesis presents strategies for the structural design of new on-surface metal-organic networks and probes their chemical reactivity. It is shown that creating uniform metal sites greatly increases selectivity when compared to ligand-free metal islands. When O2 reacts with single-site vanadium centers, in redox-active self-assembled coordination networks on the Au(100) surface, it forms one product. When O2 reacts with vanadium metal islands on the same surface, multiple products are formed. Other metal-organic networks described in this thesis include a mixed valence network containing Pt0 and PtII and a network where two Fe centers reside in close proximity. This structure is stable to temperatures >450 °C. These new on-surface assemblies may offer the ability to perform reactions of increasing complexity as future heterogeneous catalysts. The functionalization of organic semiconductor molecules is also shown. When a few molecular layers are grown on the surface, it is seen that the addition of functional groups changes both the film's structure and charge transport properties. This is due to changes in both first layer packing structure and the pi-electron distribution in the functionalized molecules compared to the original molecule. The systems described in this thesis were studied using high-resolution scanning tunneling microscopy, non-contact atomic force microscopy, and X-ray photoelectron spectroscopy. Overall, this work provides strategies for the creation of new, well-defined on-surface nanostructures and adds additional chemical insight into their properties.

p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells

PubMed Central

Irwin, Michael D.; Buchholz, D. Bruce; Hains, Alexander W.; Chang, Robert P. H.; Marks, Tobin J.

2008-01-01

To minimize interfacial power losses, thin (5–80 nm) layers of NiO, a p-type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) + [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/LiF/Al solar cells. The interfacial NiO layer is deposited by pulsed laser deposition directly onto cleaned ITO, and the active layer is subsequently deposited by spin-coating. Insertion of the NiO layer affords cell power conversion efficiencies as high as 5.2% and enhances the fill factor to 69% and the open-circuit voltage (Voc) to 638 mV versus an ITO/P3HT:PCBM/LiF/Al control device. The value of such hole-transporting/electron-blocking interfacial layers is clearly demonstrated and should be applicable to other organic photovoltaics.

Semiconductor P-I-N detector

DOEpatents

Sudharsanan, Rengarajan; Karam, Nasser H.

2001-01-01

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

Tunneling and Origin of Large Access Resistance in Layered-Crystal Organic Transistors

NASA Astrophysics Data System (ADS)

Hamai, Takamasa; Arai, Shunto; Minemawari, Hiromi; Inoue, Satoru; Kumai, Reiji; Hasegawa, Tatsuo

2017-11-01

Layered crystallinity of organic semiconductors is crucial to obtaining high-performance organic thin-film transistors (OTFTs), as it allows both smooth-channel-gate-insulator interface formation and efficient two-dimensional carrier transport along the interface. However, the role of vertical transport across the crystalline molecular layers in device operations has not been a crucial subject so far. Here, we show that the interlayer carrier transport causes unusual nonlinear current-voltage characteristics and enormous access resistance in extremely high-quality single-crystal OTFTs based on 2-decyl-7-phenyl[1]-benzothieno[3 ,2 -b ][1]benzothiophene (Ph -BTBT -C10 ) that involve inherent multiple semiconducting π -conjugated layers interposed, respectively, by electrically inert alkyl-chain layers. The output characteristics present layer-number (n )-dependent nonlinearity that becomes more evident at larger n (1 ≤n ≤15 ), demonstrating tunneling across multiple alkyl-chain layers. The n -dependent device mobility and four-probe measurements reveal that the alkyl-chain layers generate a large access resistance that suppresses the device mobility from the intrinsic value of about 20 cm2 V-1 s-1 . Our findings clarify the reason why device characteristics are distributed in single-crystal OTFTs.

Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts.

PubMed

Tang, Cindy G; Ang, Mervin C Y; Choo, Kim-Kian; Keerthi, Venu; Tan, Jun-Kai; Syafiqah, Mazlan Nur; Kugler, Thomas; Burroughes, Jeremy H; Png, Rui-Qi; Chua, Lay-Lay; Ho, Peter K H

2016-11-24

To make high-performance semiconductor devices, a good ohmic contact between the electrode and the semiconductor layer is required to inject the maximum current density across the contact. Achieving ohmic contacts requires electrodes with high and low work functions to inject holes and electrons respectively, where the work function is the minimum energy required to remove an electron from the Fermi level of the electrode to the vacuum level. However, it is challenging to produce electrically conducting films with sufficiently high or low work functions, especially for solution-processed semiconductor devices. Hole-doped polymer organic semiconductors are available in a limited work-function range, but hole-doped materials with ultrahigh work functions and, especially, electron-doped materials with low to ultralow work functions are not yet available. The key challenges are stabilizing the thin films against de-doping and suppressing dopant migration. Here we report a general strategy to overcome these limitations and achieve solution-processed doped films over a wide range of work functions (3.0-5.8 electronvolts), by charge-doping of conjugated polyelectrolytes and then internal ion-exchange to give self-compensated heavily doped polymers. Mobile carriers on the polymer backbone in these materials are compensated by covalently bonded counter-ions. Although our self-compensated doped polymers superficially resemble self-doped polymers, they are generated by separate charge-carrier doping and compensation steps, which enables the use of strong dopants to access extreme work functions. We demonstrate solution-processed ohmic contacts for high-performance organic light-emitting diodes, solar cells, photodiodes and transistors, including ohmic injection of both carrier types into polyfluorene-the benchmark wide-bandgap blue-light-emitting polymer organic semiconductor. We also show that metal electrodes can be transformed into highly efficient hole- and electron-injection contacts via the self-assembly of these doped polyelectrolytes. This consequently allows ambipolar field-effect transistors to be transformed into high-performance p- and n-channel transistors. Our strategy provides a method for producing ohmic contacts not only for organic semiconductors, but potentially for other advanced semiconductors as well, including perovskites, quantum dots, nanotubes and two-dimensional materials.

Characterization of the interface interaction of cobalt on top of copper- and iron-phthalocyanine.

PubMed

Schmitt, Felix; Sauther, Jens; Lach, Stefan; Ziegler, Christiane

2011-05-01

The electronic structure of the interface between ferromagnetic cobalt and the organic semiconductors copper- (CuPc) and iron-phthalocyanine (FePc) was investigated by means of photoemission spectroscopy (UPS, IPES, and XPS). These metal-phthalocyanine (MePc) molecules have an open shell structure and are known to show promising properties for their use in organic spintronics. In spintronic devices, the interface between ferromagnetic electrode and the organic layer determines the spin injection properties and is hence important for the quality of, e.g., a possible spin-valve device. For this purpose, cobalt was deposited onto the MePcs, such as in devices with ferromagnetic top contacts. The reported investigations reveal a diffusion of cobalt into the organic layers and chemical reactions at the interface.

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

1999-07-13

A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

Structural properties of thiophenes investigated with simulations of a coarse-grained model

NASA Astrophysics Data System (ADS)

Luettmer-Strathmann, Jutta; Almutairi, Amani

Thiophenes have important applications in organic electronics, energy conversion, and storage. The interfacial layer of an organic semiconductor in contact with a metal electrode has important effects on the performance of thin-film devices. However, the structure of this layer is not easy to model. In recent work, we developed a coarse-grained model for alpha-oligothiophenes in the bulk and near gold surfaces. We describe the molecules as linear chains of bonded, discotic particles with Gay-Berne potential interactions between non-bonded ellipsoids. In this work, we investigate structural properties of thiophenes with simulations of our coarse-grained model.

Low-voltage organic field effect transistors with a 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene semiconductor layer.

PubMed

Amin, Atefeh Y; Khassanov, Artoem; Reuter, Knud; Meyer-Friedrichsen, Timo; Halik, Marcus

2012-10-10

An asymmetric n-alkyl substitution pattern was realized in 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene (C(13)-BTBT) in order to improve the charge transport properties in organic thin-film transistors. We obtained large hole mobilities up to 17.2 cm(2)/(V·s) in low-voltage operating devices. The large mobility is related to densely packed layers of the BTBT π-systems at the channel interface dedicated to the substitution motif and confirmed by X-ray reflectivity measurements. The devices exhibit promising stability in continuous operation for several hours in ambient air.

Dry texturing of solar cells

DOEpatents

Sopori, B.L.

1994-10-25

A textured backside of a semiconductor device for increasing light scattering and absorption in a semiconductor substrate is accomplished by applying infrared radiation to the front side of a semiconductor substrate that has a metal layer deposited on its backside in a time-energy profile that first produces pits in the backside surface and then produces a thin, highly reflective, low resistivity, epitaxial alloy layer over the entire area of the interface between the semiconductor substrate and a metal contact layer. The time-energy profile includes ramping up to a first energy level and holding for a period of time to create the desired pit size and density and then rapidly increasing the energy to a second level in which the entire interface area is melted and alloyed quickly. After holding the second energy level for a sufficient time to develop the thin alloy layer over the entire interface area, the energy is ramped down to allow epitaxial crystal growth in the alloy layer. The result is a textured backside on an optically reflective, low resistivity alloy interface between the semiconductor substrate and the metal electrical contact layer. 9 figs.

Dry texturing of solar cells

DOEpatents

Sopori, Bhushan L.

1994-01-01

A textured backside of a semiconductor device for increasing light scattering and absorption in a semiconductor substrate is accomplished by applying infrared radiation to the front side of a semiconductor substrate that has a metal layer deposited on its backside in a time-energy profile that first produces pits in the backside surface and then produces a thin, highly reflective, low resistivity, epitaxial alloy layer over the entire area of the interface between the semiconductor substrate and a metal contact layer. The time-energy profile includes ramping up to a first energy level and holding for a period of time to create the desired pit size and density and then rapidly increasing the energy to a second level in which the entire interface area is melted and alloyed quickly. After holding the second energy level for a sufficient time to develop the thin alloy layer over the entire interface area, the energy is ramped down to allow epitaxial crystal growth in the alloy layer. The result is a textured backside an optically reflective, low resistivity alloy interface between the semiconductor substrate and the metal electrical contact layer.

Nanomembrane structures having mixed crystalline orientations and compositions

DOEpatents

Lagally, Max G.; Scott, Shelley A.; Savage, Donald E.

2014-08-12

The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.

Die singulation method

DOEpatents

Swiler, Thomas P.; Garcia, Ernest J.; Francis, Kathryn M.

2013-06-11

A method is disclosed for singulating die from a semiconductor substrate (e.g. a semiconductor-on-insulator substrate or a bulk silicon substrate) containing an oxide layer (e.g. silicon dioxide or a silicate glass) and one or more semiconductor layers (e.g. monocrystalline or polycrystalline silicon) located above the oxide layer. The method etches trenches through the substrate and through each semiconductor layer about the die being singulated, with the trenches being offset from each other around at least a part of the die so that the oxide layer between the trenches holds the substrate and die together. The trenches can be anisotropically etched using a Deep Reactive Ion Etching (DRIE) process. After the trenches are etched, the oxide layer between the trenches can be etched away with an HF etchant to singulate the die. A release fixture can be located near one side of the substrate to receive the singulated die.

Die singulation method

DOEpatents

Swiler, Thomas P [Albuquerque, NM; Garcia, Ernest J [Albuquerque, NM; Francis, Kathryn M [Rio Rancho, NM

2014-01-07

A method is disclosed for singulating die from a semiconductor substrate (e.g. a semiconductor-on-insulator substrate or a bulk silicon substrate) containing an oxide layer (e.g. silicon dioxide or a silicate glass) and one or more semiconductor layers (e.g. monocrystalline or polycrystalline silicon) located above the oxide layer. The method etches trenches through the substrate and through each semiconductor layer about the die being singulated, with the trenches being offset from each other around at least a part of the die so that the oxide layer between the trenches holds the substrate and die together. The trenches can be anisotropically etched using a Deep Reactive Ion Etching (DRIE) process. After the trenches are etched, the oxide layer between the trenches can be etched away with a HF etchant to singulate the die. A release fixture can be located near one side of the substrate to receive the singulated die.

Method for depositing layers of high quality semiconductor material

DOEpatents

Guha, Subhendu; Yang, Chi C.

2001-08-14

Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.

Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Min Jeong; Gwon, Dong-Oh; Lee, Chan-Mi

2015-08-15

Highlights: • A hybrid device was demonstrated by using MEH-PPV, PEDOT:PSS, and GaN nanoneedles. • I–V curve of the hybrid device showed its rectification behaviour, similar to a diode. • EL peak originated by the different potential barriers at MEH-PPV and GaN interface. - Abstract: A hybrid device that combines the properties of organic and inorganic semiconductors was fabricated and studied. It incorporated poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic polymers and GaN nanoneedles as an inorganic semiconductor. Layers of the two polymers were spin coated on to the GaN nanoneedles. The one peak in the electroluminescence spectrum originatedmore » from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles. However, the photoluminescence spectrum showed peaks due to both GaN nanoneedles and MEH-PPV. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices.« less

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aoki, T., E-mail: aokit@sc.sumitomo-chem.co.jp; Fukuhara, N.; Osada, T.

2014-07-21

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap ofmore » less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.« less

Universal diffusion-limited injection and the hook effect in organic thin-film transistors

NASA Astrophysics Data System (ADS)

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-07-01

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials.

Universal diffusion-limited injection and the hook effect in organic thin-film transistors.

PubMed

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-07-21

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials.

Universal diffusion-limited injection and the hook effect in organic thin-film transistors

PubMed Central

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-01-01

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials. PMID:27440253

Hybrid organic/inorganic position-sensitive detectors based on PEDOT:PSS/n-Si

NASA Astrophysics Data System (ADS)

Javadi, Mohammad; Gholami, Mahdiyeh; Torbatiyan, Hadis; Abdi, Yaser

2018-03-01

Various configurations like p-n junctions, metal-semiconductor Schottky barriers, and metal-oxide-semiconductor structures have been widely used in position-sensitive detectors. In this report, we propose a PEDOT:PSS/n-Si heterojunction as a hybrid organic/inorganic configuration for position-sensitive detectors. The influence of the thickness of the PEDOT:PSS layer, the wavelength of incident light, and the intensity of illumination on the device performance are investigated. The hybrid PSD exhibits very high sensitivity (>100 mV/mm), excellent nonlinearity (<3%), and a response correlation coefficient (>0.995) with a response time of <4 ms to the inhomogeneous IR illumination. The presented hybrid configuration also benefits from a straightforward low-temperature fabrication process. These advantages of the PEDOT:PSS/n-Si heterojunction are very promising for developing a new class of position-sensitive detectors based on the hybrid organic/inorganic junctions.

Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation

PubMed Central

Sun, Huabin; Wang, Qijing; Li, Yun; Lin, Yen-Fu; Wang, Yu; Yin, Yao; Xu, Yong; Liu, Chuan; Tsukagoshi, Kazuhito; Pan, Lijia; Wang, Xizhang; Hu, Zheng; Shi, Yi

2014-01-01

Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm2 V−1 s−1 is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the “reading” and “programming” speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method. PMID:25428665

Vacuum-processed polyethylene as a dielectric for low operating voltage organic field effect transistors

PubMed Central

Kanbur, Yasin; Irimia-Vladu, Mihai; Głowacki, Eric D.; Voss, Gundula; Baumgartner, Melanie; Schwabegger, Günther; Leonat, Lucia; Ullah, Mujeeb; Sarica, Hizir; Erten-Ela, Sule; Schwödiauer, Reinhard; Sitter, Helmut; Küçükyavuz, Zuhal; Bauer, Siegfried; Sariciftci, Niyazi Serdar

2012-01-01

We report on the fabrication and performance of vacuum-processed organic field effect transistors utilizing evaporated low-density polyethylene (LD-PE) as a dielectric layer. With C60 as the organic semiconductor, we demonstrate low operating voltage transistors with field effect mobilities in excess of 4 cm2/Vs. Devices with pentacene showed a mobility of 0.16 cm2/Vs. Devices using tyrian Purple as semiconductor show low-voltage ambipolar operation with equal electron and hole mobilities of ∼0.3 cm2/Vs. These devices demonstrate low hysteresis and operational stability over at least several months. Grazing-angle infrared spectroscopy of evaporated thin films shows that the structure of the polyethylene is similar to solution-cast films. We report also on the morphological and dielectric properties of these films. Our experiments demonstrate that polyethylene is a stable dielectric supporting both hole and electron channels. PMID:23483783

Optical devices combining an organic semiconductor crystal with a two-dimensional inorganic diffraction grating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kitazawa, Takenori; Yamao, Takeshi, E-mail: yamao@kit.ac.jp; Hotta, Shu

2016-02-01

We have fabricated optical devices using an organic semiconductor crystal as an emission layer in combination with a two-dimensional (2D) inorganic diffraction grating used as an optical cavity. We formed the inorganic diffraction grating by wet etching of aluminum-doped zinc oxide (AZO) under a 2D cyclic olefin copolymer (COC) diffraction grating used as a mask. The COC diffraction grating was fabricated by nanoimprint lithography. The AZO diffraction grating was composed of convex prominences arranged in a triangular lattice. The organic crystal placed on the AZO diffraction grating indicated narrowed peaks in its emission spectrum under ultraviolet light excitation. These aremore » detected parallel to the crystal plane. The peaks were shifted by rotating the optical devices around the normal to the crystal plane, which reflected the rotational symmetries of the triangular lattice through 60°.« less

Towards colorless transparent organic transistors: potential of benzothieno[3,2-b]benzothiophene-based wide-gap semiconductors.

PubMed

Moon, Hanul; Cho, Hyunsu; Kim, Mincheol; Takimiya, Kazuo; Yoo, Seunghyup

2014-05-21

Colorless, highly transparent organic thin-film transistors (TOTFTs) with high performance are realized based on benzothieno[3,2-b]benzothiophene (BTBT) derivatives that simultaneously exhibit a wide energy gap and high transport properties. Multilayer transparent source/drain electrodes maintain the transparency, and ultrathin fluoropolymer dielectric layers enable stable, low-voltage operation of the proposed TOTFTs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Inverted bulk-heterojunction solar cell with cross-linked hole-blocking layer

PubMed Central

Udum, Yasemin; Denk, Patrick; Adam, Getachew; Apaydin, Dogukan H.; Nevosad, Andreas; Teichert, Christian; S. White, Matthew.; S. Sariciftci, Niyazi.; Scharber, Markus C.

2014-01-01

We have developed a hole-blocking layer for bulk-heterojunction solar cells based on cross-linked polyethylenimine (PEI). We tested five different ether-based cross-linkers and found that all of them give comparable solar cell efficiencies. The initial idea that a cross-linked layer is more solvent resistant compared to a pristine PEI layer could not be confirmed. With and without cross-linking, the PEI layer sticks very well to the surface of the indium–tin–oxide electrode and cannot be removed by solvents used to process PEI or common organic semiconductors. The cross-linked PEI hole-blocking layer functions for multiple donor–acceptor blends. We found that using cross-linkers improves the reproducibility of the device fabrication process. PMID:24817837

Lattice-mismatched GaInP LED devices and methods of fabricating same

DOEpatents

Mascarenhas, Angelo; Steiner, Myles A; Bhusal, Lekhnath; Zhang, Yong

2014-10-21

A method (100) of fabricating an LED or the active regions of an LED and an LED (200). The method includes growing, depositing or otherwise providing a bottom cladding layer (208) of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer (208). A first active layer (202) may be grown above the bottom cladding layer (208) wherein the first active layer (202) is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer (202) will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer (204) above the first active layer (202) where the second active layer (204) Is fabricated from the same semiconductor alloy.

Amorphous semiconductor solar cell

DOEpatents

Dalal, Vikram L.

1981-01-01

A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

Organic permeable-base transistors - superb power efficiency at highest frequencies (Conference Presentation)

NASA Astrophysics Data System (ADS)

Klinger, Markus P.; Fischer, Axel; Kaschura, Felix; Scholz, Reinhard; Lüssem, Björn; Kheradmand-Boroujeni, Bahman; Ellinger, Frank; Kasemann, Daniel; Leo, Karl

2016-11-01

Organic field-effect transistors (OFET) are important elements in thin-film electronics, being considered for flat-panel or flexible displays, radio frequency identification systems, and sensor arrays. To optimize the devices for high-frequency operation, the channel length, defined as the horizontal distance between the source and the drain contact, can be scaled down. Here, an architecture with a vertical current flow, in particular the Organic Permeable-Base Transistors (OPBT), opens up new opportunities, because the effective transit length in vertical direction is precisely tunable in the nanometer range by the thickness of the semiconductor layer. We present an advanced OPBT, competing with best OFETs while a low-cost, OLED-like fabrication with low-resolution shadow masks is used (Klinger et al., Adv. Mater. 27, 2015). Its design consists of a stack of three parallel electrodes separated by two semiconductor layers of C60 . The vertical current flow is controlled by the middle base electrode with nano-sized openings passivated by an native oxide. Using insulated layers to structure the active area, devices show an on/off ratio of 10⁶ , drive 11 A/cm² at an operation voltage of 1 V, and have a low subthreshold slope of 102 mV/decade. These OPBTs show a unity current-gain transit frequency of 2.2 MHz and off-state break-down fields above 1 MV/cm. Thus, our optimized setup does not only set a benchmark for vertical organic transistors, but also outperforms best lateral OFETs using similar low-cost structuring techniques in terms of power efficiency at high frequencies.

Energy-level alignment at organic heterointerfaces

PubMed Central

Oehzelt, Martin; Akaike, Kouki; Koch, Norbert; Heimel, Georg

2015-01-01

Today’s champion organic (opto-)electronic devices comprise an ever-increasing number of different organic-semiconductor layers. The functionality of these complex heterostructures largely derives from the relative alignment of the frontier molecular-orbital energies in each layer with respect to those in all others. Despite the technological relevance of the energy-level alignment at organic heterointerfaces, and despite continued scientific interest, a reliable model that can quantitatively predict the full range of phenomena observed at such interfaces is notably absent. We identify the limitations of previous attempts to formulate such a model and highlight inconsistencies in the interpretation of the experimental data they were based on. We then develop a theoretical framework, which we demonstrate to accurately reproduce experiment. Applying this theory, a comprehensive overview of all possible energy-level alignment scenarios that can be encountered at organic heterojunctions is finally given. These results will help focus future efforts on developing functional organic interfaces for superior device performance. PMID:26702447

Nanocrystal structures

DOEpatents

Eisler, Hans J [Stoneham, MA; Sundar, Vikram C [Stoneham, MA; Walsh, Michael E [Everett, MA; Klimov, Victor I [Los Alamos, NM; Bawendi, Moungi G [Cambridge, MA; Smith, Henry I [Sudbury, MA

2008-12-30

A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

Nanocrystal structures

DOEpatents

Eisler, Hans J.; Sundar, Vikram C.; Walsh, Michael E.; Klimov, Victor I.; Bawendi, Moungi G.; Smith, Henry I.

2006-12-19

A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

Solid state radiative heat pump

DOEpatents

Berdahl, Paul H.

1986-01-01

A solid state radiative heat pump (10, 50, 70) operable at room temperature (300.degree. K.) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of charge carriers as compared to thermal equilibrium. In one form of the invention (10, 70) an infrared semiconductor photodiode (21, 71) is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention (50), a homogeneous semiconductor (51) is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation through the active surface of the semiconductor are disclosed. In one method, an anti-reflection layer (19) is coated into the active surface (13) of the semiconductor (11), the anti-reflection layer (19) having an index of refraction equal to the square root of that of the semiconductor (11). In the second method, a passive layer (75) is spaced from the active surface (73) of the semiconductor (71) by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler (91) with a paraboloid reflecting surface (92) is in contact with the active surface (13, 53) of the semiconductor (11, 51), the coupler having an index of refraction about the same as that of the semiconductor.

Optical devices featuring nonpolar textured semiconductor layers

DOEpatents

Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

2013-11-26

A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

SCB initiator

DOEpatents

Bickes Jr., Robert W.; Renlund, Anita M.; Stanton, Philip L.

1994-11-01

A detonator for high explosives initiated by mechanical impact includes a cylindrical barrel, a layer of flyer material mechanically covering the barrel at one end, and a semiconductor bridge ignitor including a pair of electrically conductive pads connected by a semiconductor bridge. The bridge is in operational contact with the layer, whereby ignition of said bridge forces a portion of the layer through the barrel to detonate the explosive. Input means are provided for igniting the semiconductor bridge ignitor.

SCB initiator

DOEpatents

Bickes, Jr., Robert W.; Renlund, Anita M.; Stanton, Philip L.

1994-01-01

A detonator for high explosives initiated by mechanical impact includes a cylindrical barrel, a layer of flyer material mechanically covering the barrel at one end, and a semiconductor bridge ignitor including a pair of electrically conductive pads connected by a semiconductor bridge. The bridge is in operational contact with the layer, whereby ignition of said bridge forces a portion of the layer through the barrel to detonate the explosive. Input means are provided for igniting the semiconductor bridge ignitor.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

PubMed

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-12-14

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

PubMed Central

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-01-01

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

Electron gas grid semiconductor radiation detectors

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

Method of transferring strained semiconductor structure

DOEpatents

Nastasi, Michael A [Santa Fe, NM; Shao, Lin [College Station, TX

2009-12-29

The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

Atomically-thin molecular layers for electrode modification of organic transistors

NASA Astrophysics Data System (ADS)

Gim, Yuseong; Kang, Boseok; Kim, Bongsoo; Kim, Sun-Guk; Lee, Joong-Hee; Cho, Kilwon; Ku, Bon-Cheol; Cho, Jeong Ho

2015-08-01

Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices. The GOs were functionalized with various aryl diazonium salts, including 4-nitroaniline, 4-fluoroaniline, or 4-methoxyaniline, to produce several types of GOs with different surface functional groups (NO2-Ph-GO, F-Ph-GO, or CH3O-Ph-GO, respectively). The deposition of aryl-functionalized GOs or their reduced derivatives onto metal electrode surfaces dramatically enhanced the electrical performances of both p-type and n-type OFETs relative to the performances of OFETs prepared without the GO modification layer. Among the functionalized rGOs, CH3O-Ph-rGO yielded the highest hole mobility of 0.55 cm2 V-1 s-1 and electron mobility of 0.17 cm2 V-1 s-1 in p-type and n-type FETs, respectively. Two governing factors: (1) the work function of the modified electrodes and (2) the crystalline microstructures of the benchmark semiconductors grown on the modified electrode surface were systematically investigated to reveal the origin of the performance improvements. Our simple, inexpensive, and scalable electrode modification technique provides a significant step toward optimizing the device performance by engineering the semiconductor-electrode interfaces in OFETs.Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices. The GOs were functionalized with various aryl diazonium salts, including 4-nitroaniline, 4-fluoroaniline, or 4-methoxyaniline, to produce several types of GOs with different surface functional groups (NO2-Ph-GO, F-Ph-GO, or CH3O-Ph-GO, respectively). The deposition of aryl-functionalized GOs or their reduced derivatives onto metal electrode surfaces dramatically enhanced the electrical performances of both p-type and n-type OFETs relative to the performances of OFETs prepared without the GO modification layer. Among the functionalized rGOs, CH3O-Ph-rGO yielded the highest hole mobility of 0.55 cm2 V-1 s-1 and electron mobility of 0.17 cm2 V-1 s-1 in p-type and n-type FETs, respectively. Two governing factors: (1) the work function of the modified electrodes and (2) the crystalline microstructures of the benchmark semiconductors grown on the modified electrode surface were systematically investigated to reveal the origin of the performance improvements. Our simple, inexpensive, and scalable electrode modification technique provides a significant step toward optimizing the device performance by engineering the semiconductor-electrode interfaces in OFETs. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr03307a

[The photoluminescence characteristics of organic multilayer quantum wells].

PubMed

Zhao, De-Wei; Song, Shu-Fang; Zhao, Su-Ling; Xu, Zheng; Wang, Yong-Sheng; Xu, Xu-Rong

2007-04-01

By the use of multi-source high-vaccum organic beam deposition system, the authors prepared organic multilayer quantum well structures, which consist of alternate organic small molecule materials PBD and Alq3. Based on 4-period organic quantum wells, different samples with different thickness barriers and wells were prepared. The authors measured the lowest unoccupied molecular orbit (LUMO) and the highest occupied molecular orbit (HOMO) by electrochemistry cyclic voltammetry and optical absorption. From the energy diagrams, it seems like type-I quantum well structures of the inorganic semiconductor, in which PBD is used as a barrier layer and Alq3 as a well layer and emitter. From small angle X-ray diffraction measurements, the results indicate that these structures have high interface quality and uniformity. The photoluminescence characteristics of organic multilayer quantum wells were investigated. The PL peak has a blue-shift with the decrease of the well layer thickness. Meanwhile as the barrier thickness decreases the PL peaks of PBD disappear gradually. And the energy may be effectively transferred from PBD to Alq3, inducing an enhancement of the luminescence of Alq3.

Oxygen Impurities Link Bistability and Magnetoresistance in Organic Spin Valves.

PubMed

Bergenti, Ilaria; Borgatti, Francesco; Calbucci, Marco; Riminucci, Alberto; Cecchini, Raimondo; Graziosi, Patrizio; MacLaren, Donald A; Giglia, Angelo; Rueff, Jean Pascal; Céolin, Denis; Pasquali, Luca; Dediu, Valentin

2018-03-07

Vertical crossbar devices based on manganite and cobalt injecting electrodes and a metal-quinoline molecular transport layer are known to manifest both magnetoresistance (MR) and electrical bistability. The two effects are strongly interwoven, inspiring new device applications such as electrical control of the MR and magnetic modulation of bistability. To explain the device functionality, we identify the mechanism responsible for electrical switching by associating the electrical conductivity and the impedance behavior with the chemical states of buried layers obtained by in operando photoelectron spectroscopy. These measurements revealed that a significant fraction of oxygen ions migrate under voltage application, resulting in a modification of the electronic properties of the organic material and of the oxidation state of the interfacial layer with the ferromagnetic contacts. Variable oxygen doping of the organic molecules represents the key element for correlating bistability and MR, and our measurements provide the first experimental evidence in favor of the impurity-driven model describing the spin transport in organic semiconductors in similar devices.

Reduced quenching effects of organic gain media with metallic electrodes via introducing a conjugated macroelectrolyte interlayer

NASA Astrophysics Data System (ADS)

Yi, Jianpeng; Huang, Jinjin; Liu, Chengfang; Lai, Wen-Yong; Huang, Wei

2017-01-01

We have demonstrated amplified spontaneous emission (ASE) restoration and threshold reduction by introducing a novel water/alcohol soluble conjugated macroelectrolyte, tris(4-(7-(9,9-di(hexyl-1-N,N-diethanolamino)-9H-fluoren-2-yl)-9,9-di(hexyl-1-N,N-diethanolamino)-9H-fluoren-2-yl)phenyl)amine (TPAOH), serving as an interfacial layer between the gain media layer, dioctyl substituted polyfluorene (PFO), and the Ag electrode layer. By optimizing the film thickness of TPAOH, enhanced ASE performance has been achieved with the lowest threshold of 21 μJ/cm2, demonstrating 3.5-fold reduction from 74 μJ/cm2. Atomic force microscopy results showed good compatibility between the TPAOH film and the PFO layer. The results suggest a facile and low-cost solution-processing interfacial technique to construct efficient organic semiconductor lasers in the presence of metallic electrodes.

Centimetre-scale electron diffusion in photoactive organic heterostructures

NASA Astrophysics Data System (ADS)

Burlingame, Quinn; Coburn, Caleb; Che, Xiaozhou; Panda, Anurag; Qu, Yue; Forrest, Stephen R.

2018-02-01

The unique properties of organic semiconductors, such as flexibility and lightness, are increasingly important for information displays, lighting and energy generation. But organics suffer from both static and dynamic disorder, and this can lead to variable-range carrier hopping, which results in notoriously poor electrical properties, with low electron and hole mobilities and correspondingly short charge-diffusion lengths of less than a micrometre. Here we demonstrate a photoactive (light-responsive) organic heterostructure comprising a thin fullerene channel sandwiched between an electron-blocking layer and a blended donor:C70 fullerene heterojunction that generates charges by dissociating excitons. Centimetre-scale diffusion of electrons is observed in the fullerene channel, and this can be fitted with a simple electron diffusion model. Our experiments enable the direct measurement of charge diffusivity in organic semiconductors, which is as high as 0.83 ± 0.07 square centimetres per second in a C60 channel at room temperature. The high diffusivity of the fullerene combined with the extraordinarily long charge-recombination time yields diffusion lengths of more than 3.5 centimetres, orders of magnitude larger than expected for an organic system.

Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas

PubMed Central

Kuo, Chin-Guo; Chen, Jung-Hsuan; Chao, Yi-Chieh; Chen, Po-Lin

2017-01-01

In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good electrical conductivity. In this work, P3HT was coated on the zinc oxide nanowires by the spin coating to form an organic-inorganic heterogeneous interface of the gas sensor for detecting ammonia gas. The thicknesses of the P3HT were around 462 nm, 397 nm, and 277 nm when the speeds of the spin coating were 4000 rpm, 5000 rpm, and 6000 rpm, respectively. The electrical properties and sensing characteristics of the gas sensing device at room temperature were evaluated by Hall effect measurement and the sensitivity of detecting ammonia gas. The results of Hall effect measurement for the P3HT-ZnO nanowires semiconductor with 462 nm P3HT film showed that the carrier concentration and the mobility were 2.7 × 1019 cm−3 and 24.7 cm2∙V−1∙s−1 respectively. The gas sensing device prepared by the P3HT-ZnO nanowires semiconductor had better sensitivity than the device composed of the ZnO film and P3HT film. Additionally, this gas sensing device could reach a maximum sensitivity around 11.58 per ppm. PMID:29295573

Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas.

PubMed

Kuo, Chin-Guo; Chen, Jung-Hsuan; Chao, Yi-Chieh; Chen, Po-Lin

2017-12-25

In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good electrical conductivity. In this work, P3HT was coated on the zinc oxide nanowires by the spin coating to form an organic-inorganic heterogeneous interface of the gas sensor for detecting ammonia gas. The thicknesses of the P3HT were around 462 nm, 397 nm, and 277 nm when the speeds of the spin coating were 4000 rpm, 5000 rpm, and 6000 rpm, respectively. The electrical properties and sensing characteristics of the gas sensing device at room temperature were evaluated by Hall effect measurement and the sensitivity of detecting ammonia gas. The results of Hall effect measurement for the P3HT-ZnO nanowires semiconductor with 462 nm P3HT film showed that the carrier concentration and the mobility were 2.7 × 10 19 cm -3 and 24.7 cm²∙V -1 ∙s -1 respectively. The gas sensing device prepared by the P3HT-ZnO nanowires semiconductor had better sensitivity than the device composed of the ZnO film and P3HT film. Additionally, this gas sensing device could reach a maximum sensitivity around 11.58 per ppm.

InP solar cell with window layer

NASA Technical Reports Server (NTRS)

Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

1994-01-01

The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

Microstructural control over soluble pentacene deposited by capillary pen printing for organic electronics.

PubMed

Lee, Wi Hyoung; Min, Honggi; Park, Namwoo; Lee, Junghwi; Seo, Eunsuk; Kang, Boseok; Cho, Kilwon; Lee, Hwa Sung

2013-08-28

Research into printing techniques has received special attention for the commercialization of cost-efficient organic electronics. Here, we have developed a capillary pen printing technique to realize a large-area pattern array of organic transistors and systematically investigated self-organization behavior of printed soluble organic semiconductor ink. The capillary pen-printed deposits of organic semiconductor, 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS_PEN), was well-optimized in terms of morphological and microstructural properties by using ink with mixed solvents of chlorobenzene (CB) and 1,2-dichlorobenzene (DCB). Especially, a 1:1 solvent ratio results in the best transistor performances. This result is attributed to the unique evaporation characteristics of the TIPS_PEN deposits where fast evaporation of CB induces a morphological evolution at the initial printed position, and the remaining DCB with slow evaporation rate offers a favorable crystal evolution at the pinned position. Finally, a large-area transistor array was facilely fabricated by drawing organic electrodes and active layers with a versatile capillary pen. Our approach provides an efficient printing technique for fabricating large-area arrays of organic electronics and further suggests a methodology to enhance their performances by microstructural control of the printed organic semiconducting deposits.

Interface design principles for high-performance organic semiconductor devices

DOE PAGES

Nie, Wanyi; Gupta, Gautam; Crone, Brian K.; ...

2015-03-23

Organic solar cells (OSCs) are a promising cost-effective candidate in next generation photovoltaic technology. However, a critical bottleneck for OSCs is the electron/hole recombination loss through charge transfer state at the interface, which greatly limits the power conversion efficiency. W. Nie, A. Mohite, and co-workers demonstrate a simple strategy of suppressing the recombination rate by inserting a spacer layer at the donor-acceptor interface, resulting in a dramatic increase in power conversion efficiency.

Fabrication of optically reflecting ohmic contacts for semiconductor devices

DOEpatents

Sopori, Bhushan L.

1995-01-01

A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

Plastic Schottky barrier solar cells

DOEpatents

Waldrop, James R.; Cohen, Marshall J.

1984-01-24

A photovoltaic cell structure is fabricated from an active medium including an undoped, intrinsically p-type organic semiconductor comprising polyacetylene. When a film of such material is in rectifying contact with a magnesium electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates the magnesium layer on the undoped polyacetylene film.

Screening of inorganic wide-bandgap p-type semiconductors for high performance hole transport layers in organic photovoltaic devices

NASA Astrophysics Data System (ADS)

Ginley, David; Zakutayev, Andriy; Garcia, Andreas; Widjonarko, Nicodemus; Ndione, Paul; Sigdel, Ajaya; Parilla, Phillip; Olson, Dana; Perkins, John; Berry, Joseph

2011-03-01

We will report on the development of novel inorganic hole transport layers (HTL) for organic photovoltaics (OPV). All the studied materials belong to the general class of wide-bandgap p-type oxide semiconductors. Potential candidates suitable for HTL applications include SnO, NiO, Cu2O (and related CuAlO2, CuCrO2, SrCu2O4 etc) and Co3O4 (and related ZnCo2O4, NiCo2O4, MgCo2O4 etc.). Materials have been optimized by high-throughput combinatorial approaches. The thin films were deposited by RF sputtering and pulsed laser deposition at ambient and elevated temperatures. Performance of the inorganic HTLs and that of the reference organic PEDOT:PSS HTL were compared by measuring the power conversion efficiencies and spectral responses of the P3HT/PCBM- and PCDTBT/PCBM-based OPV devices. Preliminary results indicate that Co3O4-based HTLs have performance comparable to that of our previously reported NiOs and PEDOT:PSS HTLs, leading to a power conversion efficiency of about 4 percent. The effect of composition and work function of the ternary materials on their performance in OPV devices is under investigation.

Chemically fixed p-n heterojunctions for polymer electronics by means of covalent B-F bond formation.

PubMed

Hoven, Corey V; Wang, Huiping; Elbing, Mark; Garner, Logan; Winkelhaus, Daniel; Bazan, Guillermo C

2010-03-01

Widely used solid-state devices fabricated with inorganic semiconductors, including light-emitting diodes and solar cells, derive much of their function from the p-n junction. Such junctions lead to diode characteristics and are attained when p-doped and n-doped materials come into contact with each other. Achieving bilayer p-n junctions with semiconducting polymers has been hindered by difficulties in the deposition of thin films with independent p-doped and n-doped layers. Here we report on how to achieve permanently fixed organic p-n heterojunctions by using a cationic conjugated polyelectrolyte with fluoride counteranions and an underlayer composed of a neutral conjugated polymer bearing anion-trapping functional groups. Application of a bias leads to charge injection and fluoride migration into the neutral layer, where irreversible covalent bond formation takes place. After the initial charging and doping, one obtains devices with no delay in the turn on of light-emitting electrochemical behaviour and excellent current rectification. Such devices highlight how mobile ions in organic media can open opportunities to realize device structures in ways that do not have analogies in the world of silicon and promise new opportunities for integrating organic materials within technologies now dominated by inorganic semiconductors.

Chemically fixed p-n heterojunctions for polymer electronics by means of covalent B-F bond formation

NASA Astrophysics Data System (ADS)

Hoven, Corey V.; Wang, Huiping; Elbing, Mark; Garner, Logan; Winkelhaus, Daniel; Bazan, Guillermo C.

2010-03-01

Widely used solid-state devices fabricated with inorganic semiconductors, including light-emitting diodes and solar cells, derive much of their function from the p-n junction. Such junctions lead to diode characteristics and are attained when p-doped and n-doped materials come into contact with each other. Achieving bilayer p-n junctions with semiconducting polymers has been hindered by difficulties in the deposition of thin films with independent p-doped and n-doped layers. Here we report on how to achieve permanently fixed organic p-n heterojunctions by using a cationic conjugated polyelectrolyte with fluoride counteranions and an underlayer composed of a neutral conjugated polymer bearing anion-trapping functional groups. Application of a bias leads to charge injection and fluoride migration into the neutral layer, where irreversible covalent bond formation takes place. After the initial charging and doping, one obtains devices with no delay in the turn on of light-emitting electrochemical behaviour and excellent current rectification. Such devices highlight how mobile ions in organic media can open opportunities to realize device structures in ways that do not have analogies in the world of silicon and promise new opportunities for integrating organic materials within technologies now dominated by inorganic semiconductors.

Self Assembly and Interface Engineering of Organic Functional Materials for High Performance Polymer Solar Cells

NASA Astrophysics Data System (ADS)

Jen, Alex

2010-03-01

The performance of polymer solar cells are strongly dependent on the efficiency of light harvesting, exciton dissociation, charge transport, and charge collection at the metal/organic, metal/metal oxide, and organic/metal oxide interfaces. To improve the device performance, two parallel approaches were used: 1) developing novel low band gap conjugated polymers with good charge-transporting properties and 2) modifying the interfaces between the organic/metal oxide and organic/metal layers with functional self-assembling monolayers to tune their energy barriers. Moreover, the molecule engineering approach was also used to tune the energy level, charge mobility, and morphology of organic semiconductors.

Device Engineered Organic Transistors for Flexible Sensing Applications.

PubMed

Zang, Yaping; Huang, Dazhen; Di, Chong-An; Zhu, Daoben

2016-06-01

Organic thin-film transistors (OFETs) represent a promising candidate for next-generation sensing applications because of the intrinsic advantages of organic semiconductors. The development of flexible sensing devices has received particular interest in the past few years. The recent efforts of developing OFETs for sensitive and specific flexible sensors are summarized from the standpoint of device engineering. The tuning of signal transduction and signal amplification are highlighted based on an overview of active-layer thickness modulation, functional receptor implantation and device geometry optimization. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof

DOEpatents

McCandless, Brian E.

2001-06-26

An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

Processes for multi-layer devices utilizing layer transfer

DOEpatents

Nielson, Gregory N; Sanchez, Carlos Anthony; Tauke-Pedretti, Anna; Kim, Bongsang; Cederberg, Jeffrey; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

2015-02-03

A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

Photonic crystals for improving light absorption in organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duché, D., E-mail: david.duche@im2np.fr; Le Rouzo, J.; Masclaux, C.

2015-02-07

We theoretically and experimentally study the structuration of organic solar cells in the shape of photonic crystal slabs. By taking advantage of the optical properties of photonic crystals slabs, we show the possibility to couple Bloch modes with very low group velocities in the active layer of the cells. These Bloch modes, also called slow Bloch modes (SBMs), allow increasing the lifetime of photons within the active layer. Finally, we present experimental demonstration performed by using nanoimprint to directly pattern the standard poly-3-hexylthiophène:[6,6]-phenyl-C61-butiryc acid methyl ester organic semiconductor blend in thin film form in the shape of a photonic crystalmore » able to couple SBMs. In agreement with the model, optical characterizations will demonstrate significant photonic absorption gains.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Usanov, D. A., E-mail: UsanovDA@info.sgu.ru; Nikitov, S. A.; Skripal, A. V.

A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n{sup +} layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.

Selective epitaxy using the gild process

DOEpatents

Weiner, Kurt H.

1992-01-01

The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

Semiconductor devices incorporating multilayer interference regions

DOEpatents

Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

1990-01-01

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

High-efficiency photovoltaic cells

DOEpatents

Yang, H.T.; Zehr, S.W.

1982-06-21

High efficiency solar converters comprised of a two cell, non-lattice matched, monolithic stacked semiconductor configuration using optimum pairs of cells having bandgaps in the range 1.6 to 1.7 eV and 0.95 to 1.1 eV, and a method of fabrication thereof, are disclosed. The high band gap subcells are fabricated using metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) to produce the required AlGaAs layers of optimized composition, thickness and doping to produce high performance, heteroface homojunction devices. The low bandgap subcells are similarly fabricated from AlGa(As)Sb compositions by LPE, MBE or MOCVD. These subcells are then coupled to form a monolithic structure by an appropriate bonding technique which also forms the required transparent intercell ohmic contact (IOC) between the two subcells. Improved ohmic contacts to the high bandgap semiconductor structure can be formed by vacuum evaporating to suitable metal or semiconductor materials which react during laser annealing to form a low bandgap semiconductor which provides a low contact resistance structure.

Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

NASA Astrophysics Data System (ADS)

Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Yokoyama, Masaaki; Seki, Shu

2014-07-01

The density of traps at semiconductor-insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 1012 cm-2, and the hole mobility was up to 6.5 cm2 V-1 s-1 after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

Analytical and numerical analysis of charge carriers extracted by linearly increasing voltage in a metal-insulator-semiconductor structure relevant to bulk heterojunction organic solar cells

NASA Astrophysics Data System (ADS)

Yumnam, Nivedita; Hirwa, Hippolyte; Wagner, Veit

2017-12-01

Analysis of charge extraction by linearly increasing voltage is conducted on metal-insulator-semiconductor capacitors in a structure relevant to organic solar cells. For this analysis, an analytical model is developed and is used to determine the conductivity of the active layer. Numerical simulations of the transient current were performed as a way to confirm the applicability of our analytical model and other analytical models existing in the literature. Our analysis is applied to poly(3-hexylthiophene)(P3HT) : phenyl-C61-butyric acid methyl ester (PCBM) which allows to determine the electron and hole mobility independently. A combination of experimental data analysis and numerical simulations reveals the effect of trap states on the transient current and where this contribution is crucial for data analysis.

Ordered materials for organic electronics and photonics.

PubMed

O'Neill, Mary; Kelly, Stephen M

2011-02-01

We present a critical review of semiconducting/light emitting, liquid crystalline materials and their use in electronic and photonic devices such as transistors, photovoltaics, OLEDs and lasers. We report that annealing from the mesophase improves the order and packing of organic semiconductors to produce state-of-the-art transistors. We discuss theoretical models which predict how charge transport and light emission is affected by the liquid crystalline phase. Organic photovoltaics and OLEDs require optimization of both charge transport and optical properties and we identify the various trade-offs involved for ordered materials. We report the crosslinking of reactive mesogens to give pixellated full-colour OLEDs and distributed bi-layer photovoltaics. We show how the molecular organization inherent to the mesophase can control the polarization of light-emitting devices and the gain in organic, thin-film lasers and can also provide distributed feedback in chiral nematic mirrorless lasers. We update progress on the surface alignment of liquid crystalline semiconductors to obtain monodomain devices without defects or devices with spatially varying properties. Finally the significance of all of these developments is assessed. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

25th anniversary article: charge transport and recombination in polymer light-emitting diodes.

PubMed

Kuik, Martijn; Wetzelaer, Gert-Jan A H; Nicolai, Herman T; Craciun, N Irina; De Leeuw, Dago M; Blom, Paul W M

2014-01-01

This article reviews the basic physical processes of charge transport and recombination in organic semiconductors. As a workhorse, LEDs based on a single layer of poly(p-phenylene vinylene) (PPV) derivatives are used. The hole transport in these PPV derivatives is governed by trap-free space-charge-limited conduction, with the mobility depending on the electric field and charge-carrier density. These dependencies are generally described in the framework of hopping transport in a Gaussian density of states distribution. The electron transport on the other hand is orders of magnitude lower than the hole transport. The reason is that electron transport is hindered by the presence of a universal electron trap, located at 3.6 eV below vacuum with a typical density of ca. 3 × 10¹⁷ cm⁻³. The trapped electrons recombine with free holes via a non-radiative trap-assisted recombination process, which is a competing loss process with respect to the emissive bimolecular Langevin recombination. The trap-assisted recombination in disordered organic semiconductors is governed by the diffusion of the free carrier (hole) towards the trapped carrier (electron), similar to the Langevin recombination of free carriers where both carriers are mobile. As a result, with the charge-carrier mobilities and amount of trapping centers known from charge-transport measurements, the radiative recombination as well as loss processes in disordered organic semiconductors can be fully predicted. Evidently, future work should focus on the identification and removing of electron traps. This will not only eliminate the non-radiative trap-assisted recombination, but, in addition, will shift the recombination zone towards the center of the device, leading to an efficiency improvement of more than a factor of two in single-layer polymer LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

DOEpatents

Norman, Andrew

2016-08-23

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

Crystalline Stratification in Semiconducting Polymer Thin Film Quantified by Grazing Incidence X-ray Scattering

NASA Astrophysics Data System (ADS)

Gann, Eliot; Caironi, Mario; Noh, Yong-Young; Kim, Yun-Hi; McNeill, Christopher R.

The depth dependence of crystalline structure within thin films is critical for many technological applications, but has been impossible to measure directly using common techniques. In this work, by monitoring diffraction peak intensity and location and utilizing the highly angle-dependent waveguiding effects of X-rays near grazing incidence we quantitatively measure the thickness, roughness and orientation of stratified crystalline layers within thin films of a high-performance semiconducting polymer. In particular, this diffractive X-ray waveguiding reveals a self-organized 5-nm-thick crystalline surface layer with crystalline orientation orthogonal to the underlying 65-nm-thick layer. While demonstrated for an organic semiconductor film, this approach is applicable to any thin film material system where stratified crystalline structure and orientation can influence important interfacial processes such as charge injection and field-effect transport.

High Performance Photodiode Based on p-Si/Copper Phthalocyanine Heterojunction.

PubMed

Zhong, Junkang; Peng, Yingquan; Zheng, Tingcai; Lv, Wenli; Ren, Qiang; Fobao, Huang; Ying, Wang; Chen, Zhen; Tang, Ying

2016-06-01

Hybrid organic-inorganic (HOI) photodiodes have both advantages of organic and inorganic materials, including compatibility of traditional Si-based semiconductor technology, low cost, high photosensitivity and high reliability, showing tremendous value in application. Red light sensitive HOI photodiodes based on the p-Si/copper phthalocyanine (CuPc) hetrojunction were fabricated and characterized. The effects of CuPc layer thickness on the performance were investigated, and an optimal layer thickness of around 30 nm was determined. An analytical expression is derived to describe the measured thickness dependence of the saturation photocurrent. For the device with optimal CuPc layer thickness, a photoresponsivity of 0.35 A/W and external quantum efficiency of 70% were obtained at 9 V reverse voltage bias and 655 nm light illumination of 0.451 mW. Furthermore, optical power dependent performances were investigated.

Alternative photocatalysts to TiO2 for the photocatalytic reduction of CO2

NASA Astrophysics Data System (ADS)

Nikokavoura, Aspasia; Trapalis, Christos

2017-01-01

The increased concentration of CO2 in the atmosphere, originating from the burning of fossil fuels in stationary and mobile sources, is referred as the "Anthropogenic Greenhouse Effect" and constitutes a major environmental concern. The scientific community is highly concerned about the resulting enhancement of the mean atmospheric temperature, so a vast diversity of methods has been applied. Thermochemical, electrochemical, photocatalytic, photoelectrochemical processes, as well as combination of solar electricity generation and water splitting processes have been performed in order to lower the CO2 atmospheric levels. Photocatalytic methods are environmental friendly and succeed in reducing the atmospheric CO2 concentration and producing fuels or/and useful organic compounds at the same time. The most common photocatalysts for the CO2 reduction are the inorganic, the carbon based semiconductors and the hybrids based on semiconductors, which combine stability, low cost and appropriate structure in order to accomplish redox reactions. In this review, inorganic semiconductors such as single-metal oxide, mixed-metal oxides, metal oxide composites, layered double hydroxides (LDHs), salt composites, carbon based semiconductors such as graphene based composites, CNT composites, g-C3N4 composites and hybrid organic-inorganic materials (ZIFs) were studied. TiO2 and Ti based photocatalysts are extensively studied and therefore in this review they are not mentioned.

Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen

DOEpatents

Compaan, Alvin D.; Price, Kent J.; Ma, Xianda; Makhratchev, Konstantin

2005-02-08

A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.

Fabrication of optically reflecting ohmic contacts for semiconductor devices

DOEpatents

Sopori, B.L.

1995-07-04

A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

Semiconductor devices incorporating multilayer interference regions

DOEpatents

Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

1987-08-31

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aoki, Takeshi, E-mail: aokit@sc.sumitomo-chem.co.jp; Fukuhara, Noboru; Osada, Takenori

2015-08-15

This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resultingmore » MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.« less

Simplified efficient phosphorescent organic light-emitting diodes by organic vapor phase deposition

NASA Astrophysics Data System (ADS)

Pfeiffer, P.; Beckmann, C.; Stümmler, D.; Sanders, S.; Simkus, G.; Heuken, M.; Vescan, A.; Kalisch, H.

2017-12-01

The most efficient phosphorescent organic light-emitting diodes (OLEDs) are comprised of complex stacks with numerous organic layers. State-of-the-art phosphorescent OLEDs make use of blocking layers to confine charge carriers and excitons. On the other hand, simplified OLEDs consisting of only three organic materials have shown unexpectedly high efficiency when first introduced. This was attributed to superior energy level matching and suppressed external quantum efficiency (EQE) roll-off. In this work, we study simplified OLED stacks, manufactured by organic vapor phase deposition, with a focus on charge balance, turn-on voltage (Von), and efficiency. To prevent electrons from leaking through the device, we implemented a compositionally graded emission layer. By grading the emitter with the hole transport material, charge confinement is enabled without additional blocking layers. Our best performing organic stack is composed of only three organic materials in two layers including the emitter Ir(ppy)3 and yields a Von of 2.5 V (>1 cd/m2) and an EQE of 13% at 3000 cd/m2 without the use of any additional light extraction techniques. Changes in the charge balance, due to barrier tuning or adjustments in the grading parameters and layer thicknesses, are clearly visible in the current density-voltage-luminance (J-V-L) measurements. As charge injection at the electrodes and organic interfaces is of great interest but difficult to investigate in complex device structures, we believe that our simplified organic stack is not only a potent alternative to complex state-of-the-art OLEDs but also a well suited test vehicle for experimental studies focusing on the modification of the electrode-organic semiconductor interface.

Solution-Processed Organic Thin-Film Transistor Array for Active-Matrix Organic Light-Emitting Diode

NASA Astrophysics Data System (ADS)

Harada, Chihiro; Hata, Takuya; Chuman, Takashi; Ishizuka, Shinichi; Yoshizawa, Atsushi

2013-05-01

We developed a 3-in. organic thin-film transistor (OTFT) array with an ink-jetted organic semiconductor. All layers except electrodes were fabricated by solution processes. The OTFT performed well without hysteresis, and the field-effect mobility in the saturation region was 0.45 cm2 V-1 s-1, the threshold voltage was 3.3 V, and the on/off current ratio was more than 106. We demonstrated a 3-in. active-matrix organic light-emitting diode (AMOLED) display driven by the OTFT array. The display could provide clear moving images. The peak luminance of the display was 170 cd/m2.

Simultaneous cross-linking and p-doping of a polymeric semiconductor film by immersion into a phosphomolybdic acid solution for use in organic solar cells.

PubMed

Aizawa, Naoya; Fuentes-Hernandez, Canek; Kolesov, Vladimir A; Khan, Talha M; Kido, Junji; Kippelen, Bernard

2016-03-07

Poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT) is shown to be simultaneously cross-linked and p-doped when immersed into a phosphomolybdic acid solution, yielding conductive films with low solubility that can withstand the solution processing of subsequent photoactive layers. Such a modified PCDTBT film serves to improve hole collection and limit carrier recombination in organic solar cells.

2,7-Diphenyl[1]benzothieno[3,2-b]benzothiophene, a new organic semiconductor for air-stable organic field-effect transistors with mobilities up to 2.0 cm2 V(-1) s(-1).

PubMed

Takimiya, Kazuo; Ebata, Hideaki; Sakamoto, Katsuhiro; Izawa, Takafumi; Otsubo, Tetsuo; Kunugi, Yoshihito

2006-10-04

Vapor-deposited thin films of a newly developed sulfur-containing heteroarene, 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT), were used as an active layer of OFETs, which showed excellent FET characteristics in ambient conditions with mobilities of approximately 2.0 cm2 V-1 s-1 and Ion/Ioff of 107.

Decreased Charge Transport Barrier and Recombination of Organic Solar Cells by Constructing Interfacial Nanojunction with Annealing-Free ZnO and Al Layers.

PubMed

Liu, Chunyu; Zhang, Dezhong; Li, Zhiqi; Zhang, Xinyuan; Guo, Wenbin; Zhang, Liu; Ruan, Shengping; Long, Yongbing

2017-07-05

To overcome drawbacks of the electron transport layer, such as complex surface defects and unmatched energy levels, we successfully employed a smart semiconductor-metal interfacial nanojunciton in organic solar cells by evaporating an ultrathin Al interlayer onto annealing-free ZnO electron transport layer, resulting in a high fill factor of 73.68% and power conversion efficiency of 9.81%. The construction of ZnO-Al nanojunction could effectively fill the surface defects of ZnO and reduce its work function because of the electron transfer from Al to ZnO by Fermi level equilibrium. The filling of surface defects decreased the interfacial carrier recombination in midgap trap states. The reduced surface work function of ZnO-Al remodulated the interfacial characteristics between ZnO and [6,6]-phenyl C71-butyric acid methyl ester (PC 71 BM), decreasing or even eliminating the interfacial barrier against the electron transport, which is beneficial to improve the electron extraction capacity. The filled surface defects and reduced interfacial barrier were realistically observed by photoluminescence measurements of ZnO film and the performance of electron injection devices, respectively. This work provides a simple and effective method to simultaneously solve the problems of surface defects and unmatched energy level for the annealing-free ZnO or other metal oxide semiconductors, paving a way for the future popularization in photovoltaic devices.

Multifunctional graphene optoelectronic devices capable of detecting and storing photonic signals.

PubMed

Jang, Sukjae; Hwang, Euyheon; Lee, Youngbin; Lee, Seungwoo; Cho, Jeong Ho

2015-04-08

The advantages of graphene photodetectors were utilized to design a new multifunctional graphene optoelectronic device. Organic semiconductors, gold nanoparticles (AuNPs), and graphene were combined to fabricate a photodetecting device with a nonvolatile memory function for storing photonic signals. A pentacene organic semiconductor acted as a light absorption layer in the device and provided a high hole photocurrent to the graphene channel. The AuNPs, positioned between the tunneling and blocking dielectric layers, acted as both a charge trap layer and a plasmonic light scatterer, which enable storing of the information about the incident light. The proposed pentacene-graphene-AuNP hybrid photodetector not only performed well as a photodetector in the visible light range, it also was able to store the photonic signal in the form of persistent current. The good photodetection performance resulted from the plasmonics-enabled enhancement of the optical absorption and from the photogating mechanisms in the pentacene. The device provided a photoresponse that depended on the wavelength of incident light; therefore, the signal information (both the wavelength and intensity) of the incident light was effectively committed to memory. The simple process of applying a negative pulse gate voltage could then erase the programmed information. The proposed photodetector with the capacity to store a photonic signal in memory represents a significant step toward the use of graphene in optoelectronic devices.

Context-based automated defect classification system using multiple morphological masks

DOEpatents

Gleason, Shaun S.; Hunt, Martin A.; Sari-Sarraf, Hamed

2002-01-01

Automatic detection of defects during the fabrication of semiconductor wafers is largely automated, but the classification of those defects is still performed manually by technicians. This invention includes novel digital image analysis techniques that generate unique feature vector descriptions of semiconductor defects as well as classifiers that use these descriptions to automatically categorize the defects into one of a set of pre-defined classes. Feature extraction techniques based on multiple-focus images, multiple-defect mask images, and segmented semiconductor wafer images are used to create unique feature-based descriptions of the semiconductor defects. These feature-based defect descriptions are subsequently classified by a defect classifier into categories that depend on defect characteristics and defect contextual information, that is, the semiconductor process layer(s) with which the defect comes in contact. At the heart of the system is a knowledge database that stores and distributes historical semiconductor wafer and defect data to guide the feature extraction and classification processes. In summary, this invention takes as its input a set of images containing semiconductor defect information, and generates as its output a classification for the defect that describes not only the defect itself, but also the location of that defect with respect to the semiconductor process layers.

Semiconductor ferroelectric compositions and their use in photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rappe, Andrew M; Davies, Peter K; Spanier, Jonathan E

Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprisingmore » a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.« less

Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

NASA Astrophysics Data System (ADS)

Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo

2016-10-01

Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron-hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals

DOE PAGES

Perret, Edith; Highland, M. J.; Stephenson, G. B.; ...

2014-08-04

Non-polar orientations of III-nitride semiconductors have attracted significant interest due to their potential application in optoelectronic devices with enhanced efficiency. Using in-situ surface x-ray scattering during metal-organic vapor phase epitaxy (MOVPE) of GaN on non-polar (m-plane) and polar (c-plane) orientations of single crystal substrates, we have observed the homoepitaxial growth modes as a function of temperature and growth rate. On the m-plane surface we observe all three growth modes (step-flow, layer-by-layer, and three-dimensional) as conditions are varied. In contrast, the +c-plane surface exhibits a direct cross over between step-flow and 3-D growth, with no layer-by-layer regime. The apparent activation energymore » of 2.8 ± 0.2 eV observed for the growth rate at the layer-by-layer to step-flow boundary on the m-plane surface is consistent with those observed for MOVPE growth of other III-V compounds, indicating a large critical nucleus size for islands.« less

The formation of organic (propolis films)/inorganic (layered crystals) interfaces for optoelectronic applications

NASA Astrophysics Data System (ADS)

Drapak, S. I.; Bakhtinov, A. P.; Gavrylyuk, S. V.; Kovalyuk, Z. D.; Lytvyn, O. S.

2008-10-01

Propolis (honeybee glue) organic films were prepared from an alcoholic solution on the surfaces of inorganic layered semiconductors (indium, gallium and bismuth selenides). Atomic force microscopy (AFM) and X-ray diffraction (XRD) are used to characterize structural properties of an organic/inorganic interfaces. It is shown that nanodimensional linear defects and nanodimensional cavities of various shapes are formed on the van der Waals (VDW) surfaces of layered crystals as a result of chemical interaction between the components of propolis (flavonoids, aminoacids and phenolic acids) and the VDW surfaces as well as deformation interaction between the VDW surfaces and propolis films during their polymerization. The nanocavities are formed as a result of the rupture of strong covalent bonds in the upper layers of layered crystals and have the shape of hexagons or triangles in the (0001) plane. The shape, lateral size and distribution of nanodimensional defects on the VDW surfaces depends on the type of crystals, the magnitude and distribution of surface stresses. We have obtained self-organized nanofold structures of propolis/InSe interface. It is established that such heterostructures have photosensitivity in the infrared range hν<1.2 eV (the values of energy gap are 1.2 eV for InSe and 3.07 eV for propolis films at room temperature).

High efficiency photovoltaic device

DOEpatents

Guha, Subhendu; Yang, Chi C.; Xu, Xi Xiang

1999-11-02

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

Directional Charge Separation in Isolated Organic Semiconductor Crystalline Nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barnes, Michael; Labastide, Joelle; Bond-Thompson, Hilary

2017-03-01

In the conventional view of organic photovoltaics (OPV), localized electronic excitations (excitons) formed in the active layer are transported by random 3D diffusion to an interface where charge separation and extraction take place. Because radiative de-excitation is usually strongly allowed in organic semiconductors, efficient charge separation requires high exciton mobility, with much of the diffusive motion ‘wasted’ in directions that don’t result in an interface encounter. Our research efforts are focused on ways to enforce a preferred directionality in energy and/or charge transport using ordered crystalline nanowires in which the intermolecular interactions that facilitate transport along, for example, the pi-stackingmore » axis, can be made several orders of magnitude stronger than those in a transverse direction. The results presented in our recent work (Nature Communications) is a first step towards realizing the goal of directional control of both energy transport and charge separation, where excitons shared between adjacent molecules dissociate exclusively along the pi-stacking direction.« less

Electronic functions of solid-to-liquid interfaces of organic semiconductor crystals and ionic liquid

NASA Astrophysics Data System (ADS)

Takeya, J.

2008-10-01

The environment of surface electrons at 'solid-to-liquid' interfaces is somewhat extreme, subjected to intense local electric fields or harsh chemical pressures that high-density ionic charge or polarization of mobile molecules create. In this proceedings, we argue functions of electronic carriers generated at the surface of organic semiconductor crystals in response to the local electric fields in the very vicinity of the interface to ionic liquid. The ionic liquids (ILs), or room temperature molten salts, are gaining considerable interest in the recent decade at the prospect of nonvolatile 'green solvents', with the development of chemically stable and nontoxic compounds. Moreover, such materials are also applied to electrolytes for lithium ion batteries and electric double-layer (EDL) capacitors. Our present solid-to-liquid interfaces of rubrene single crystals and ionic liquids work as fast-switching organic field-effect transistors (OFETs) with the highest transconductance, i.e. the most efficient response of the output current to the input voltage, among the OFETs ever built.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

PubMed

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-05-09

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C60 bilayer solar cells

PubMed Central

Jenatsch, Sandra; Geiger, Thomas; Heier, Jakob; Kirsch, Christoph; Nüesch, Frank; Paracchino, Adriana; Rentsch, Daniel; Ruhstaller, Beat; C Véron, Anna; Hany, Roland

2015-01-01

Simple bilayer organic solar cells rely on very thin coated films that allow for effective light absorption and charge carrier transport away from the heterojunction at the same time. However, thin films are difficult to coat on rough substrates or over large areas, resulting in adverse shorting and low device fabrication yield. Chemical p-type doping of organic semiconductors can reduce Ohmic losses in thicker transport layers through increased conductivity. By using a Co(III) complex as chemical dopant, we studied doped cyanine dye/C60 bilayer solar cell performance for increasing dye film thickness. For films thicker than 50 nm, doping increased the power conversion efficiency by more than 30%. At the same time, the yield of working cells increased to 80%. We addressed the fate of the doped cyanine dye, and found no influence of doping on solar cell long term stability. PMID:27877804

Organic electrical double layer transistors gated with ionic liquids

NASA Astrophysics Data System (ADS)

Xie, Wei; Frisbie, C. Daniel

2011-03-01

Transport in organic semiconductors gated with several types of ionic liquids has been systematically studied at charge densities larger than 1013 cm-2 . We observe a pronounced maximum in channel conductance for both p-type and n-type organic single crystals which is attributed to carrier localization at the semiconductor-electrolyte interface. Carrier mobility, as well as charge density and dielectric capacitance are determined through displacement current measurement and capacitance-voltage measurement. By using a larger-sized and spherical anion, tris(pentafluoroethyl)trifluorophosphate (FAP), effective carrier mobility in rubrene can be enhanced substantially up to 3.2 cm2 V-1 s -1 . Efforts have been made to maximize the charge density in rubrene single crystals, and at low temperature when higher gate bias can be applied, charge density can more than double the amount of that at room temperature, reaching 8*1013 cm-2 holes (0.4 holes per rubrene molecule). NSF MRSEC program at the University of Minnesota.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

PubMed Central

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-01-01

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V−1 sec−1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity. PMID:27157914

Cross-plane coherent acoustic phonons in two-dimensional organic-inorganic hybrid perovskites.

PubMed

Guo, Peijun; Stoumpos, Constantinos C; Mao, Lingling; Sadasivam, Sridhar; Ketterson, John B; Darancet, Pierre; Kanatzidis, Mercouri G; Schaller, Richard D

2018-05-22

Two-dimensional Ruddlesden-Popper organic-inorganic hybrid layered perovskites (2D RPs) are solution-grown semiconductors with prospective applications in next-generation optoelectronics. The heat-carrying, low-energy acoustic phonons, which are important for heat management of 2D RP-based devices, have remained unexplored. Here we report on the generation and propagation of coherent longitudinal acoustic phonons along the cross-plane direction of 2D RPs, following separate characterizations of below-bandgap refractive indices. Through experiments on single crystals of systematically varied perovskite layer thickness, we demonstrate significant reduction in both group velocity and propagation length of acoustic phonons in 2D RPs as compared to the three-dimensional methylammonium lead iodide counterpart. As borne out by a minimal coarse-grained model, these vibrational properties arise from a large acoustic impedance mismatch between the alternating layers of perovskite sheets and bulky organic cations. Our results inform on thermal transport in highly impedance-mismatched crystal sub-lattices and provide insights towards design of materials that exhibit highly anisotropic thermal dissipation properties.

Photoprecursor Approach Enables Preparation of Well-Performing Bulk-Heterojunction Layers Comprising a Highly Aggregating Molecular Semiconductor.

PubMed

Suzuki, Mitsuharu; Yamaguchi, Yuji; Takahashi, Kohei; Takahira, Katsuya; Koganezawa, Tomoyuki; Masuo, Sadahiro; Nakayama, Ken-ichi; Yamada, Hiroko

2016-04-06

Active-layer morphology critically affects the performance of organic photovoltaic cells, and thus its optimization is a key toward the achievement of high-efficiency devices. However, the optimization of active-layer morphology is sometimes challenging because of the intrinsic properties of materials such as strong self-aggregating nature or low miscibility. This study postulates that the "photoprecursor approach" can serve as an effective means to prepare well-performing bulk-heterojunction (BHJ) layers containing highly aggregating molecular semiconductors. In the photoprecursor approach, a photoreactive precursor compound is solution-deposited and then converted in situ to a semiconducting material. This study employs 2,6-di(2-thienyl)anthracene (DTA) and [6,6]-phenyl-C71-butyric acid methyl ester as p- and n-type materials, respectively, in which DTA is generated by the photoprecursor approach from the corresponding α-diketone-type derivative DTADK. When only chloroform is used as a cast solvent, the photovoltaic performance of the resulting BHJ films is severely limited because of unfavorable film morphology. The addition of a high-boiling-point cosolvent, o-dichlorobenzene (o-DCB), to the cast solution leads to significant improvement such that the resulting active layers afford up to approximately 5 times higher power conversion efficiencies. The film structure is investigated by two-dimensional grazing-incident wide-angle X-ray diffraction, atomic force microscopy, and fluorescence microspectroscopy to demonstrate that the use of o-DCB leads to improvement in film crystallinity and increase in charge-carrier generation efficiency. The change in film structure is assumed to originate from dynamic molecular motion enabled by the existence of solvent during the in situ photoreaction. The unique features of the photoprecursor approach will be beneficial in extending the material and processing scopes for the development of organic thin-film devices.

Blue/pink/purple electroluminescence from metal-oxide-semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon

NASA Astrophysics Data System (ADS)

Ohzone, Takashi; Matsuda, Toshihiro; Fukuoka, Ryouhei; Hattori, Fumihiro; Iwata, Hideyuki

2016-08-01

Blue/pink/purple electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with an indium tin oxide (ITO)/[Gd/(Ta + Gd/Pr)/(Pr + Ce)-Si-O] insulator layer/n+-Si substrate surface is reported. The insulator layers were fabricated from organic liquid sources of Gd or (Ta + Gd/Pr)/(Pr + Ce) mixtures, which were spin-coated on the n+-Si substrate and annealed at 950 °C for 30 min in air. The EL emission could be observed by the naked eye in the dark in the Fowler-Nordheim (FN) tunnel current regions. Peak wavelengths in the measured EL spectra were independent of the positive current. The EL intensity ratio of ultraviolet (UV) to the visible range varied with the composition ratio of the (Ta + Gd) liquids, and an optimum Ta to Gd ratio existed for the strongest blue emission, which could be attributed to the Ta-related oxide/silicate. The pink EL of the device fabricated with the (\\text{Ta}:\\text{Pr} = 6:4) mixture ratio can be explained by EL emission peaks related to the Pr3+ ions. The purple EL observed from the (\\text{Pr}:\\text{Ce} = 6:4) device corresponds to the strong and broad emission profile near the 357 nm peak, which cannot be assigned to Ce3+ ions. The results suggest that the EL can be attributed to the double-layer oxides with different compositions in the MOS devices. The upper layer consists of various Ta-, Gd-, Pr-, and Ce-related oxides and their silicates, while the lower SiO x -rich layer contributes to the FN current due to the high electric field, and thus the various EL colors.

Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm

NASA Astrophysics Data System (ADS)

Marmalyuk, A. A.; Ryaboshtan, Yu L.; Gorlachuk, P. V.; Ladugin, M. A.; Padalitsa, A. A.; Slipchenko, S. O.; Lyutetskiy, A. V.; Veselov, D. A.; Pikhtin, N. A.

2018-03-01

The effect of the waveguide layer thickness on output characteristics of AlGaInAs/InP quantum-well semiconductor lasers is analysed. The samples of semiconductor lasers with narrow and wide waveguides are experimentally fabricated. Their comparison is carried out and the advantages of particular constructions depending on the current pump are demonstrated.

Wavelength-division multiplexed optical integrated circuit with vertical diffraction grating

NASA Technical Reports Server (NTRS)

Lang, Robert J. (Inventor); Forouhar, Siamak (Inventor)

1994-01-01

A semiconductor optical integrated circuit for wave division multiplexing has a semiconductor waveguide layer, a succession of diffraction grating points in the waveguide layer along a predetermined diffraction grating contour, a semiconductor diode array in the waveguide layer having plural optical ports facing the succession of diffraction grating points along a first direction, respective semiconductor diodes in the array corresponding to respective ones of a predetermined succession of wavelengths, an optical fiber having one end thereof terminated at the waveguide layer, the one end of the optical fiber facing the succession of diffraction grating points along a second direction, wherein the diffraction grating points are spatially distributed along the predetermined contour in such a manner that the succession of diffraction grating points diffracts light of respective ones of the succession of wavelengths between the one end of the optical fiber and corresponding ones of the optical ports.

Dye-sensitized solar cells

DOEpatents

Skotheim, T.A.

1980-03-04

A low-cost dye-sensitized Schottky barrier solar cell is comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent. 3 figs.

Dye-sensitized solar cells

DOEpatents

Skotheim, Terje A. [Berkeley, CA

1980-03-04

A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent.

Dye-sensitized Schottky barrier solar cells

DOEpatents

Skotheim, Terje A.

1978-01-01

A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent.

Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Schwank, James R.; Fleetwood, Daniel M.; Shaneyfelt, Marty R.; Winokur, Peter S.; Devine, Roderick A. B.

1998-01-01

A method for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus-voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer.

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, R.J.; Osbourn, G.C.

1983-07-08

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, Roger J.; Osbourn, Gordon C.

1987-01-01

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

Monte-Carlo simulations of a coarse-grained model for α-oligothiophenes

NASA Astrophysics Data System (ADS)

Almutairi, Amani; Luettmer-Strathmann, Jutta

The interfacial layer of an organic semiconductor in contact with a metal electrode has important effects on the performance of thin-film devices. However, the structure of this layer is not easy to model. Oligothiophenes are small, π-conjugated molecules with applications in organic electronics that also serve as small-molecule models for polythiophenes. α-hexithiophene (6T) is a six-ring molecule, whose adsorption on noble metal surfaces has been studied extensively (see, e.g., Ref.). In this work, we develop a coarse-grained model for α-oligothiophenes. We describe the molecules as linear chains of bonded, discotic particles with Gay-Berne potential interactions between non-bonded ellipsoids. We perform Monte Carlo simulations to study the structure of isolated and adsorbed molecules

Solar Power Wires Based on Organic Photovoltaic Materials

NASA Astrophysics Data System (ADS)

Lee, Michael R.; Eckert, Robert D.; Forberich, Karen; Dennler, Gilles; Brabec, Christoph J.; Gaudiana, Russell A.

2009-04-01

Organic photovoltaics in a flexible wire format has potential advantages that are described in this paper. A wire format requires long-distance transport of current that can be achieved only with conventional metals, thus eliminating the use of transparent oxide semiconductors. A phase-separated, photovoltaic layer, comprising a conducting polymer and a fullerene derivative, is coated onto a thin metal wire. A second wire, coated with a silver film, serving as the counter electrode, is wrapped around the first wire. Both wires are encased in a transparent polymer cladding. Incident light is focused by the cladding onto to the photovoltaic layer even when it is completely shadowed by the counter electrode. Efficiency values of the wires range from 2.79% to 3.27%.

Mixed ternary heterojunction solar cell

DOEpatents

Chen, Wen S.; Stewart, John M.

1992-08-25

A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.

Photoelectrochemical cells for conversion of solar energy to electricity and methods of their manufacture

DOEpatents

Skotheim, Terje

1984-04-10

A photoelectric device is disclosed which comprises first and second layers of semiconductive material, each of a different bandgap, with a layer of dry solid polymer electrolyte disposed between the two semiconductor layers. A layer of a polymer blend of a highly conductive polymer and a solid polymer electrolyte is further interposed between the dry solid polymer electrolyte and the first semiconductor layer. A method of manufacturing such devices is also disclosed.

Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

PubMed

Zhang, Panlong; Wang, Haibo; Yan, Donghang

2017-09-01

A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanoscale Spectroscopic Imaging of Organic Semiconductor Films by Plasmon-Polariton Coupling

NASA Astrophysics Data System (ADS)

Zhang, D.; Heinemeyer, U.; Stanciu, C.; Sackrow, M.; Braun, K.; Hennemann, L. E.; Wang, X.; Scholz, R.; Schreiber, F.; Meixner, A. J.

2010-02-01

Tip-enhanced near-field optical images and correlated topographic images of an organic semiconductor film (diindenoperylene, DIP) on Si have been recorded with high optical contrast and high spatial resolution (17 nm) using a parabolic mirror with a high numerical aperture for tip illumination and signal collection. The DIP molecular domain boundaries being one to four molecular layers (1.5-6 nm) high are resolved topographically by a shear-force scanning tip and optically by simultaneously recording the 6×105 times enhanced photoluminescence (PL). The excitation is 4×104 times enhanced and the intrinsically weak PL-yield of the DIP-film is 15-fold enhanced by the tip. The Raman spectra indicate an upright orientation of the DIP molecules. The enhanced PL contrast results from the local film morphology via stronger coupling between the tip plasmon and the exciton-polariton in the DIP film.

Removing the current-limit of vertical organic field effect transistors

NASA Astrophysics Data System (ADS)

Sheleg, Gil; Greenman, Michael; Lussem, Bjorn; Tessler, Nir

2017-11-01

The reported Vertical Organic Field Effect Transistors (VOFETs) show either superior current and switching speeds or well-behaved transistor performance, especially saturation in the output characteristics. Through the study of the relationship between the device architecture or dimensions and the device performance, we find that achieving a saturation regime in the output characteristics requires that the device operates in the injection limited regime. In current structures, the existence of the injection limited regime depends on the source's injection barrier as well as on the buried semiconductor layer thickness. To overcome the injection limit imposed by the necessity of injection barrier, we suggest a new architecture to realize VOFETs. This architecture shows better gate control and is independent of the injection barrier at the source, thus allowing for several A cm-2 for a semiconductor having a mobility value of 0.1 cm2 V-1 s-1.

Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

DOEpatents

Findikoglu, Alp T [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM; Matias, Vladimir [Santa Fe, NM; Choi, Woong [Los Alamos, NM

2009-10-27

A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-04-02

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

Colored ultra-thin hybrid photovoltaics with high quantum efficiency for decorative PV applications (Presentation Recording)

NASA Astrophysics Data System (ADS)

Guo, L. Jay

2015-10-01

This talk will describe an approach to create architecturally compatible and decorative thin-film-based hybrid photovoltaics [1]. Most current solar panels are fabricated via complex processes using expensive semiconductor materials, and they are rigid and heavy with a dull, black appearance. As a result of their non-aesthetic appearance and weight, they are primarily installed on rooftops to minimize their negative impact on building appearance. Recently we introduced dual-function solar cells based on ultra-thin dopant-free amorphous silicon embedded in an optical cavity that not only efficiently extract the photogenerated carriers but also display distinctive colors with the desired angle-insensitive appearances [1,2]. The angle-insensitive behavior is the result of an interesting phase cancellation effect in the optical cavity with respect to angle of light propagation [3]. In order to produce the desired optical effect, the semiconductor layer should be ultra-thin and the traditional doped layers need to be eliminated. We adopted the approach of employing charge transport/blocking layers used in organic solar cells to meet this demand. We showed that the ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell can transmit desired wavelength of light and that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges. This is because the a-Si layer thickness is smaller than the charge diffusion length, therefore the electron-hole recombination is strongly suppressed in such ultra-thin layer. Reflective colored PVs can be made in a similar fashion. Light-energy-harvesting colored signage was demonstrated. Furthermore, a cascaded photovoltaics scheme based on tunable spectrum splitting can be employed to increase power efficiency by absorbing a broader band of light energy. Our work provides a guideline for optimizing a photoactive layer thickness in high efficiency hybrid PV design, which can be adopted by other material systems as well. Based on these understandings, we have also developed colored perovskite PV by integrating an optical cavity with the perovskite semiconductors [4]. The principle and experimental results will be presented. 1. J. Y. Lee, K. T. Lee, S.Y. Seo, L. J. Guo, "Decorative power generating panels creating angle insensitive transmissive colors," Sci. Rep. 4, 4192, 2014. 2. K. T. Lee, J.Y. Lee, S.-Y. Seo, and L. J. Guo, "Colored ultra-thin hybrid photovoltaics with high quantum efficiency," Light: Science and Applications, 3, e215, 2014. 3. K. T. Lee, S.-Y. Seo, J.Y. Lee, and L. J. Guo, "Ultrathin metal-semiconductor-metal resonator for angle invariant visible band transmission filters," Appl. Phys. Lett. 104, 231112, (2014); and "Strong resonance effect in a lossy medium-based optical cavity for angle robust spectrum filters," Adv. Mater, 26, 6324-6328, 2014. 4. K. T. Lee, M. Fukuda, L. J. Guo, "Colored, see-through perovskite solar cells employing an optical cavity," Submitted, 2015

Flexible ITO-free organic solar cells applying aqueous solution-processed V2O5 hole transport layer: An outdoor stability study

NASA Astrophysics Data System (ADS)

Lima, F. Anderson S.; Beliatis, Michail J.; Roth, Bérenger; Andersen, Thomas R.; Bortoti, Andressa; Reyna, Yegraf; Castro, Eryza; Vasconcelos, Igor F.; Gevorgyan, Suren A.; Krebs, Frederik C.; Lira-Cantu, Mónica

2016-02-01

Solution processable semiconductor oxides have opened a new paradigm for the enhancement of the lifetime of thin film solar cells. Their fabrication by low-cost and environmentally friendly solution-processable methods makes them ideal barrier (hole and electron) transport layers. In this work, we fabricate flexible ITO-free organic solar cells (OPV) by printing methods applying an aqueous solution-processed V2O5 as the hole transport layer (HTL) and compared them to devices applying PEDOT:PSS. The transparent conducting electrode was PET/Ag/PEDOT/ZnO, and the OPV configuration was PET/Ag/PEDOT/ZnO/P3HT:PC60BM/HTL/Ag. Outdoor stability analyses carried out for more than 900 h revealed higher stability for devices fabricated with the aqueous solution-processed V2O5.

Flexible single-layer ionic organic-inorganic frameworks towards precise nano-size separation

NASA Astrophysics Data System (ADS)

Yue, Liang; Wang, Shan; Zhou, Ding; Zhang, Hao; Li, Bao; Wu, Lixin

2016-02-01

Consecutive two-dimensional frameworks comprised of molecular or cluster building blocks in large area represent ideal candidates for membranes sieving molecules and nano-objects, but challenges still remain in methodology and practical preparation. Here we exploit a new strategy to build soft single-layer ionic organic-inorganic frameworks via electrostatic interaction without preferential binding direction in water. Upon consideration of steric effect and additional interaction, polyanionic clusters as connection nodes and cationic pseudorotaxanes acting as bridging monomers connect with each other to form a single-layer ionic self-assembled framework with 1.4 nm layer thickness. Such soft supramolecular polymer frameworks possess uniform and adjustable ortho-tetragonal nanoporous structure in pore size of 3.4-4.1 nm and exhibit greatly convenient solution processability. The stable membranes maintaining uniform porous structure demonstrate precisely size-selective separation of semiconductor quantum dots within 0.1 nm of accuracy and may hold promise for practical applications in selective transport, molecular separation and dialysis systems.

Transition metal oxide as anode interface buffer for impedance spectroscopy

NASA Astrophysics Data System (ADS)

Xu, Hui; Tang, Chao; Wang, Xu-Liang; Zhai, Wen-Juan; Liu, Rui-Lan; Rong, Zhou; Pang, Zong-Qiang; Jiang, Bing; Fan, Qu-Li; Huang, Wei

2015-12-01

Impedance spectroscopy is a strong method in electric measurement, which also shows powerful function in research of carrier dynamics in organic semiconductors when suitable mathematical physical models are used. Apart from this, another requirement is that the contact interface between the electrode and materials should at least be quasi-ohmic contact. So in this report, three different transitional metal oxides, V2O5, MoO3 and WO3 were used as hole injection buffer for interface of ITO/NPB. Through the impedance spectroscopy and PSO algorithm, the carrier mobilities and I-V characteristics of the NPB in different devices were measured. Then the data curves were compared with the single layer device without the interface layer in order to investigate the influence of transitional metal oxides on the carrier mobility. The careful research showed that when the work function (WF) of the buffer material was just between the work function of anode and the HOMO of the organic material, such interface material could work as a good bridge for carrier injection. Under such condition, the carrier mobility measured through impedance spectroscopy should be close to the intrinsic value. Considering that the HOMO (or LUMO) of most organic semiconductors did not match with the work function of the electrode, this report also provides a method for wide application of impedance spectroscopy to the research of carrier dynamics.

Electrodynamic properties of a hypercrystal with ferrite and semiconductor layers in an external magnetic field

NASA Astrophysics Data System (ADS)

Fedorin, Illia V.

2018-01-01

Electrodynamic properties of a photonic hypercrystal formed by periodically alternating two types of anisotropic metamaterials are studied. The first metamaterial consists of ferrite and dielectric layers, while the second metamaterial consists of semiconductor and dielectric layers. The system is assumed to be placed in an external magnetic field, which applied parallel to the boundaries of the layers. An effective medium theory which is suitable for calculation of properties of long-wavelength electromagnetic modes is applied in order to derive averaged expressions for effective constitutive parameters. It has been shown that providing a conscious choice of the constitutive parameters and material fractions of magnetic, semiconductor, and dielectric layers, the system under study shows hypercrystal properties for both TE and TM waves in the different frequency ranges.

Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

DOEpatents

Wu, Xuanzhi; Sheldon, Peter

2000-01-01

A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

Charge dissipative dielectric for cryogenic devices

NASA Technical Reports Server (NTRS)

Cantor, Robin Harold (Inventor); Hall, John Addison (Inventor)

2007-01-01

A Superconducting Quantum Interference Device (SQUID) is disclosed comprising a pair of resistively shunted Josephson junctions connected in parallel within a superconducting loop and biased by an external direct current (dc) source. The SQUID comprises a semiconductor substrate and at least one superconducting layer. The metal layer(s) are separated by or covered with a semiconductor material layer having the properties of a conductor at room temperature and the properties of an insulator at operating temperatures (generally less than 100 Kelvins). The properties of the semiconductor material layer greatly reduces the risk of electrostatic discharge that can damage the device during normal handling of the device at room temperature, while still providing the insulating properties desired to allow normal functioning of the device at its operating temperature. A method of manufacturing the SQUID device is also disclosed.

Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

NASA Astrophysics Data System (ADS)

Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

2017-03-01

Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

Spin-Polarized Tunneling at Interfaces Between Oxides and Metals or Semiconductors

DTIC Science & Technology

2006-09-01

solution 3 3. Several miscellaneous compounds , including molecular oxygen and organic biradicals 4. Metals When a variable magnetic field is...substrate layer) Heusler alloys are considered to be prime candidates, because they show great potential for spin-injection contacts to compound and...usually employ simple parabolic bands and/or momentum and energy independent tunneling matrix elements. The classical theory of tunneling assumes that the

Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links.

PubMed

Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L

2016-03-09

Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links.

Back wall solar cell

NASA Technical Reports Server (NTRS)

Brandhorst, H. W., Jr. (Inventor)

1978-01-01

A solar cell is disclosed which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to electrical energy, and a layer of a second semiconductor material, preferably highly doped, of opposite conductivity type on the first semiconductor material adjacent the first semiconductor material at an interface remote from the heavily doped field region. Instead of the opposite conductivity layer, a metallic Schottky diode layer may be used, in which case no additional back contact is needed. A contact such as a gridded contact, previous to the radiant energy may be applied to the heavily doped field region of the more heavily doped, same conductivity material for its contact.

Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment.

PubMed

Porrazzo, Rossella; Luzio, Alessandro; Bellani, Sebastiano; Bonacchini, Giorgio Ernesto; Noh, Yong-Young; Kim, Yun-Hi; Lanzani, Guglielmo; Antognazza, Maria Rosa; Caironi, Mario

2017-01-31

The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm -2 in full accumulation and a mobility-capacitance product of 7 × 10 -3 μF/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation.

Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment

PubMed Central

2017-01-01

The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm–2 in full accumulation and a mobility–capacitance product of 7 × 10–3 μF/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation. PMID:28180187

Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

DOEpatents

Gessert, T.A.

1999-06-01

A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

DOEpatents

Gessert, Timothy A.

1999-01-01

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

[CH(3)(CH(2))(11)NH(3)]SnI(3): a hybrid semiconductor with MoO(3)-type tin(II) iodide layers.

PubMed

Xu, Zhengtao; Mitzi, David B

2003-10-20

The organic-inorganic hybrid [CH(3)(CH(2))(11)NH(3)]SnI(3) presents a lamellar structure with a Sn-I framework isotypic to that of MoO(3). The SnI(3)(-) layer consists of edge and corner-sharing SnI(6) octahedra in which one of the six Sn-I bonds is distinctly elongated (e.g., 3.62 A), indicating lone-pair stereoactivity for the Sn(II) atom. The overall electronic character remains comparable with that of the well-studied SnI(4)(2)(-)-based perovskite semiconductors, such as [CH(3)(CH(2))(11)NH(3)](2)SnI(4), with a red-shifted and broadened exciton peak associated with the band gap, apparently due to the increased dimensionality of the Sn-I framework. The title compound offers, aside from the hybrid perovskites, a new type of solution-processable Sn-I network for potential applications in semiconductive devices.

A Designed Room Temperature Multilayered Magnetic Semiconductor

NASA Astrophysics Data System (ADS)

Bouma, Dinah Simone; Charilaou, Michalis; Bordel, Catherine; Duchin, Ryan; Barriga, Alexander; Farmer, Adam; Hellman, Frances; Materials Science Division, Lawrence Berkeley National Lab Team

2015-03-01

A room temperature magnetic semiconductor has been designed and fabricated by using an epitaxial antiferromagnet (NiO) grown in the (111) orientation, which gives surface uncompensated magnetism for an odd number of planes, layered with the lightly doped semiconductor Al-doped ZnO (AZO). Magnetization and Hall effect measurements of multilayers of NiO and AZO are presented for varying thickness of each. The magnetic properties vary as a function of the number of Ni planes in each NiO layer; an odd number of Ni planes yields on each NiO layer an uncompensated moment which is RKKY-coupled to the moments on adjacent NiO layers via the carriers in the AZO. This RKKY coupling oscillates with the AZO layer thickness, and it disappears entirely in samples where the AZO is replaced with undoped ZnO. The anomalous Hall effect data indicate that the carriers in the AZO are spin-polarized according to the direction of the applied field at both low temperature and room temperature. NiO/AZO multilayers are therefore a promising candidate for spintronic applications demanding a room-temperature semiconductor.

Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

ERIC Educational Resources Information Center

Jones, Kenneth

1979-01-01

Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

Electron Tunneling in Junctions Doped with Semiconductors and Metals.

NASA Astrophysics Data System (ADS)

Bell, Lloyd Douglas, II

In this study, tunnel junctions incorporating thin layers of semiconductors and metals have been analyzed. Inelastic electron tunneling spectroscopy (IETS) was employed to yield high-resolution vibrational spectra of surface species deposited at the oxide-M_2 interface of M_1-M_1O _{rm x}-M _2 tunneling samples. Analysis was also performed on the elastic component of the tunneling current, yielding information on the tunnel barrier shape. The samples in this research exhibit a wide range of behavior. The IETS for Si, SiO_2, and Ge doped samples show direct evidence of SiH _{rm x} and GeH_ {rm x} formation. The particular species formed is shown to depend on the form of the evaporated dopant. Samples were also made with organic dopants deposited over the evaporated dopants. Many such samples show marked effects of the evaporated dopants on the inelastic peak intensities of the organic dopants. These alterations are correlated with the changed reactivity of the oxide surface coupled with a change in the OH dipole layer density on the oxide. Thicker organic dopant layers cause large changes in the elastic tunneling barrier due to OH layer alterations or the low barrier attributes of the evaporated dopant. In the cases of the thicker layers an extra current-carrying mechanism is shown to be contributing. Electron ejection from charge traps is proposed as an explanation for this extra current. The trend of barrier shape with dopant thickness is examined. Many of these dopants also produce a voltage-induced shift in the barrier shape which is stable at low temperature but relaxes at high temperature. This effect is similar to that produced by certain organic dopants and is explained by metastable bond formation between the surface OH and dopant. Other dopants, such as Al, Mg, and Fe, produce different effects. These dopants cause large I-V nonlinearity at low voltages. This nonlinearity is modeled as a giant zero-bias anomaly (ZBA) and fits are presented which show good agreement with theory. For some samples, poor fits result due to additional nonlinearity at higher voltages. This is explained in terms of a barrier lowering due to disruption of the OH layer or the small bandgap of the dopant.

Gain in three-dimensional metamaterials utilizing semiconductor quantum structures

NASA Astrophysics Data System (ADS)

Schwaiger, Stephan; Klingbeil, Matthias; Kerbst, Jochen; Rottler, Andreas; Costa, Ricardo; Koitmäe, Aune; Bröll, Markus; Heyn, Christian; Stark, Yuliya; Heitmann, Detlef; Mendach, Stefan

2011-10-01

We demonstrate gain in a three-dimensional metal/semiconductor metamaterial by the integration of optically active semiconductor quantum structures. The rolling-up of a metallic structure on top of strained semiconductor layers containing a quantum well allows us to achieve a tightly bent superlattice consisting of alternating layers of lossy metallic and amplifying gain material. We show that the transmission through the superlattice can be enhanced by exciting the quantum well optically under both pulsed or continuous wave excitation. This points out that our structures can be used as a starting point for arbitrary three-dimensional metamaterials including gain.

Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

DOEpatents

Warren, W.L.; Vanheusden, K.J.R.; Schwank, J.R.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.

1998-07-28

A method is disclosed for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer. 5 figs.

Interlayer excitons in a bulk van der Waals semiconductor.

PubMed

Arora, Ashish; Drüppel, Matthias; Schmidt, Robert; Deilmann, Thorsten; Schneider, Robert; Molas, Maciej R; Marauhn, Philipp; Michaelis de Vasconcellos, Steffen; Potemski, Marek; Rohlfing, Michael; Bratschitsch, Rudolf

2017-09-21

Bound electron-hole pairs called excitons govern the electronic and optical response of many organic and inorganic semiconductors. Excitons with spatially displaced wave functions of electrons and holes (interlayer excitons) are important for Bose-Einstein condensation, superfluidity, dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments and ab initio calculations for 2H-MoTe 2 , we explain their salient features: the positive sign of the g-factor and the large diamagnetic shift. Our investigations solve the long-standing puzzle of positive g-factors in transition metal dichalcogenides, and pave the way for studying collective phenomena in these materials at elevated temperatures.Excitons, quasi-particles of bound electron-hole pairs, are at the core of the optoelectronic properties of layered transition metal dichalcogenides. Here, the authors unveil the presence of interlayer excitons in bulk van der Waals semiconductors, arising from strong localization and spin-valley coupling of charge carriers.

On precursor self-organization upon the microwave vacuum-plasma deposition of submonolayer carbon coatings on silicon (100) crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yafarov, R. K., E-mail: pirpc@yandex.ru

Scanning atomic-force and electron microscopies are used to study the self-organization kinetics of nanoscale domains upon the deposition of submonolayer carbon coatings on silicon (100) in the microwave plasma of low-pressure ethanol vapor. Model mechanisms of how silicon-carbon domains are formed are suggested. The mechanisms are based on Langmuir’s model of adsorption from the precursor state and modern concepts of modification of the equilibrium structure of the upper atomic layer in crystalline semiconductors under the influence of external action.

SLS complementary logic devices with increase carrier mobility

DOEpatents

Chaffin, R.J.; Osbourn, G.C.; Zipperian, T.E.

1991-07-09

In an electronic device comprising a semiconductor material and having at least one performance characteristic which is limited by the mobility of holes in the semiconductor material, said mobility being limited because of a valence band degeneracy among high-mobility and low-mobility energy levels accessible to said holes at the energy-momentum space maximum, an improvement is provided wherein the semiconductor material is a strained layer superlattice (SLS) whose layer compositions and layer thicknesses are selected so that the strain on the layers predominantly containing said at least one carrier type splits said degeneracy and modifies said energy levels around said energy-momentum space maximum in a manner whereby said limitation on the mobility of said holes is alleviated. 5 figures.

SLS complementary logic devices with increase carrier mobility

DOEpatents

Chaffin, Roger J.; Osbourn, Gordon C.; Zipperian, Thomas E.

1991-01-01

In an electronic device comprising a semiconductor material and having at least one performance characteristic which is limited by the mobility of holes in the semiconductor material, said mobility being limited because of a valence band degeneracy among high-mobility and low-mobility energy levels accessible to said holes at the energy-momentum space maximum, an improvement is provided wherein the semiconductor material is a strained layer superlattice (SLS) whose layer compositions and layer thicknesses are selected so that the strain on the layers predominantly containing said at least one carrier type splits said degeneracy and modifies said energy levels around said energy-momentum space maximum in a manner whereby said limitation on the mobility of said holes is alleviated.

Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.

2016-03-15

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materialsmore » on the basis of porous silicon and nanostructures with a high aspect ratio.« less

Electrically pumped edge-emitting photonic bandgap semiconductor laser

DOEpatents

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

NASA Technical Reports Server (NTRS)

Danchenko, V.

1974-01-01

Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.

Large area ultraviolet photodetector on surface modified Si:GaN layers

NASA Astrophysics Data System (ADS)

Anitha, R.; R., Ramesh; Loganathan, R.; Vavilapalli, Durga Sankar; Baskar, K.; Singh, Shubra

2018-03-01

Unique features of semiconductor based heterostructured photoelectric devices have drawn considerable attention in the recent past. In the present work, large area UV photodetector has been fabricated utilizing interesting Zinc oxide microstructures on etched Si:GaN layers. The surface of Si:GaN layer grown by metal organic chemical vapor deposition method on sapphire has been modified by chemical etching to control the microstructure. The photodetector exhibits response to Ultraviolet light only. Optimum etching of Si:GaN was required to exhibit higher responsivity (0.96 A/W) and detectivity (∼4.87 × 109 Jones), the two important parameters for a photodetector. Present method offers a tunable functionality of photodetector through modification of top layer microstructure. A comparison with state of art materials has also been presented.

Traditional Semiconductors in the Two-Dimensional Limit.

PubMed

Lucking, Michael C; Xie, Weiyu; Choe, Duk-Hyun; West, Damien; Lu, Toh-Ming; Zhang, S B

2018-02-23

Interest in two-dimensional materials has exploded in recent years. Not only are they studied due to their novel electronic properties, such as the emergent Dirac fermion in graphene, but also as a new paradigm in which stacking layers of distinct two-dimensional materials may enable different functionality or devices. Here, through first-principles theory, we reveal a large new class of two-dimensional materials which are derived from traditional III-V, II-VI, and I-VII semiconductors. It is found that in the ultrathin limit the great majority of traditional binary semiconductors studied (a series of 28 semiconductors) are not only kinetically stable in a two-dimensional double layer honeycomb structure, but more energetically stable than the truncated wurtzite or zinc-blende structures associated with three dimensional bulk. These findings both greatly increase the landscape of two-dimensional materials and also demonstrate that in the double layer honeycomb form, even ordinary semiconductors, such as GaAs, can exhibit exotic topological properties.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Scalable quantum computer architecture with coupled donor-quantum dot qubits

DOEpatents

Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

2014-08-26

A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

PubMed

Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

2018-04-12

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

Efficient organic photovoltaic cells on a single layer graphene transparent conductive electrode using MoOx as an interfacial layer.

PubMed

Du, J H; Jin, H; Zhang, Z K; Zhang, D D; Jia, S; Ma, L P; Ren, W C; Cheng, H M; Burn, P L

2017-01-07

The large surface roughness, low work function and high cost of transparent electrodes using multilayer graphene films can limit their application in organic photovoltaic (OPV) cells. Here, we develop single layer graphene (SLG) films as transparent anodes for OPV cells that contain light-absorbing layers comprised of the evaporable molecular organic semiconductor materials, zinc phthalocyanine (ZnPc)/fullerene (C60), as well as a molybdenum oxide (MoO x ) interfacial layer. In addition to an increase in the optical transmittance, the SLG anodes had a significant decrease in surface roughness compared to two and four layer graphene (TLG and FLG) anodes fabricated by multiple transfer and stacking of SLGs. Importantly, the introduction of a MoO x interfacial layer not only reduced the energy barrier between the graphene anode and the active layer, but also decreased the resistance of the SLG by nearly ten times. The OPV cells with the structure of polyethylene terephthalate/SLG/MoO x /CuI/ZnPc/C60/bathocuproine/Al were flexible, and had a power conversion efficiency of up to 0.84%, which was only 17.6% lower than the devices with an equivalent structure but prepared on commercial indium tin oxide anodes. Furthermore, the devices with the SLG anode were 50% and 86.7% higher in efficiency than the cells with the TLG and FLG anodes. These results show the potential of SLG electrodes for flexible and wearable OPV cells as well as other organic optoelectronic devices.

Tandem organic light-emitting diodes with buffer-modified C60/pentacene as charge generation layer

NASA Astrophysics Data System (ADS)

Wang, Zhen; Zheng, Xin; Liu, Fei; Wang, Pei; Gan, Lin; Wang, Jing-jing

2017-09-01

Buffer-modified C60/pentacene as charge generation layer (CGL) is investigated to achieve effective performance of charge generation. Undoped green electroluminescent tandem organic light-emitting diodes (OLEDs) with multiple identical emissive units and using buffer-modified C60/pentacene organic semiconductor heterojunction (OHJ) as CGL are demonstrated to exhibit better current density and brightness, compared with conventional single-unit devices. The current density and brightness both can be significantly improved with increasing the thickness of Al. However, excessive thickness of Al seriously decreases the transmittance of films and damages the interface. As a result, the maximum current efficiency of 1.43 cd·A-1 at 30 mA·cm-2 can be achieved for tandem OLEDs with optimal thickness of Al. These results clearly demonstrate that Cs2CO3/Al is an effective buffer for C60/pentacene-based tandem OLEDs.

Organic Spin-Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering.

PubMed

Jang, Hyuk-Jae; Richter, Curt A

2017-01-01

Since the first observation of the spin-valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin-polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin-flip mechanisms in organic semiconductors and the role of hybrid metal-organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin-transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal-organic interface by interface engineering can greatly impact the efficiency of spin-polarized carrier injection. Here, progress on efficient spin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self-assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single-crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin-polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Understanding polymorphism in organic semiconductor thin films through nanoconfinement.

PubMed

Diao, Ying; Lenn, Kristina M; Lee, Wen-Ya; Blood-Forsythe, Martin A; Xu, Jie; Mao, Yisha; Kim, Yeongin; Reinspach, Julia A; Park, Steve; Aspuru-Guzik, Alán; Xue, Gi; Clancy, Paulette; Bao, Zhenan; Mannsfeld, Stefan C B

2014-12-10

Understanding crystal polymorphism is a long-standing challenge relevant to many fields, such as pharmaceuticals, organic semiconductors, pigments, food, and explosives. Controlling polymorphism of organic semiconductors (OSCs) in thin films is particularly important given that such films form the active layer in most organic electronics devices and that dramatic changes in the electronic properties can be induced even by small changes in the molecular packing. However, there are very few polymorphic OSCs for which the structure-property relationships have been elucidated so far. The major challenges lie in the transient nature of metastable forms and the preparation of phase-pure, highly crystalline thin films for resolving the crystal structures and evaluating the charge transport properties. Here we demonstrate that the nanoconfinement effect combined with the flow-enhanced crystal engineering technique is a powerful and likely material-agnostic method to identify existing polymorphs in OSC materials and to prepare the individual pure forms in thin films at ambient conditions. With this method we prepared high quality crystal polymorphs and resolved crystal structures of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), including a new polymorph discovered via in situ grazing incidence X-ray diffraction and confirmed by molecular mechanic simulations. We further correlated molecular packing with charge transport properties using quantum chemical calculations and charge carrier mobility measurements. In addition, we applied our methodology to a [1]benzothieno[3,2-b][1]1benzothiophene (BTBT) derivative and successfully stabilized its metastable form.

Digital Alloy Absorber for Photodetectors

NASA Technical Reports Server (NTRS)

Hill, Cory J. (Inventor); Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor)

2016-01-01

In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.

Transient phases during fast crystallization of organic thin films from solution

NASA Astrophysics Data System (ADS)

Wan, Jing; Li, Yang; Ulbrandt, Jeffrey G.; Smilgies, Detlef-M.; Hollin, Jonathan; Whalley, Adam C.; Headrick, Randall L.

2016-01-01

We report an in situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to ≈93 °C. The layered smectic liquid-crystalline phase of C8-BTBT initially forms and preceedes inter-layer ordering, followed by a transient crystalline phase for temperature >60 °C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during high-speed processing. For high writing speed (25 mm/s), mobility up to 3.0 cm2/V-s has been observed.

GUARD RING SEMICONDUCTOR JUNCTION

DOEpatents

Goulding, F.S.; Hansen, W.L.

1963-12-01

A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

Self bleaching photoelectrochemical-electrochromic device

DOEpatents

Bechinger, Clemens S.; Gregg, Brian A.

2002-04-09

A photoelectrochemical-electrochromic device comprising a first transparent electrode and a second transparent electrode in parallel, spaced relation to each other. The first transparent electrode is electrically connected to the second transparent electrode. An electrochromic material is applied to the first transparent electrode and a nanoporous semiconductor film having a dye adsorbed therein is applied to the second transparent electrode. An electrolyte layer contacts the electrochromic material and the nanoporous semiconductor film. The electrolyte layer has a redox couple whereby upon application of light, the nanoporous semiconductor layer dye absorbs the light and the redox couple oxidizes producing an electric field across the device modulating the effective light transmittance through the device.

Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

NASA Astrophysics Data System (ADS)

Zhukov, N. D.; Mosiyash, D. S.; Sinev, I. V.; Khazanov, A. A.; Smirnov, A. V.; Lapshin, I. V.

2017-12-01

Current-voltage ( I- V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I- V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

Plastic Schottky-barrier solar cells

DOEpatents

Waldrop, J.R.; Cohen, M.J.

1981-12-30

A photovoltaic cell structure is fabricated from an active medium including an undoped polyacetylene, organic semiconductor. When a film of such material is in rectifying contact with a metallic area electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates a magnesium layer on the undoped polyacetylene film. With the proper selection and location of elements a photovoltaic cell structure and solar cell are obtained.

Design of Polymers with Semiconductor, NLO and Structural Properties.

DTIC Science & Technology

1991-04-22

polymer thin films. + 14 KV Needle electrod Polymer layer ITO electrode Substrate Heater and temperature control unit The second harmonic coefficients of...the solubily and processability through utilization of derivitization and precursor routes we have been able to form the first optical quality films...ethylene spacer, and therefore 14 possesses a great degree of solubility in organic solvents, necessary for the fabrication of optical quality thin films

Photo-reactive charge trapping memory based on lanthanide complex.

PubMed

Zhuang, Jiaqing; Lo, Wai-Sum; Zhou, Li; Sun, Qi-Jun; Chan, Chi-Fai; Zhou, Ye; Han, Su-Ting; Yan, Yan; Wong, Wing-Tak; Wong, Ka-Leung; Roy, V A L

2015-10-09

Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 10(4) s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

Photo-reactive charge trapping memory based on lanthanide complex

NASA Astrophysics Data System (ADS)

Zhuang, Jiaqing; Lo, Wai-Sum; Zhou, Li; Sun, Qi-Jun; Chan, Chi-Fai; Zhou, Ye; Han, Su-Ting; Yan, Yan; Wong, Wing-Tak; Wong, Ka-Leung; Roy, V. A. L.

2015-10-01

Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 104 s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

NASA Astrophysics Data System (ADS)

Hadjichristov, G. B.; Ivanov, Tz E.; Marinov, Y. G.

2014-12-01

Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+ at the fluence of 3.2 × 1016 cm-2 the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined.

Advances and Promises of Layered Halide Hybrid Perovskite Semiconductors.

PubMed

Pedesseau, Laurent; Sapori, Daniel; Traore, Boubacar; Robles, Roberto; Fang, Hong-Hua; Loi, Maria Antonietta; Tsai, Hsinhan; Nie, Wanyi; Blancon, Jean-Christophe; Neukirch, Amanda; Tretiak, Sergei; Mohite, Aditya D; Katan, Claudine; Even, Jacky; Kepenekian, Mikaël

2016-11-22

Layered halide hybrid organic-inorganic perovskites (HOP) have been the subject of intense investigation before the rise of three-dimensional (3D) HOP and their impressive performance in solar cells. Recently, layered HOP have also been proposed as attractive alternatives for photostable solar cells and revisited for light-emitting devices. In this review, we combine classical solid-state physics concepts with simulation tools based on density functional theory to overview the main features of the optoelectronic properties of layered HOP. A detailed comparison between layered and 3D HOP is performed to highlight differences and similarities. In the same way as the cubic phase was established for 3D HOP, here we introduce the tetragonal phase with D 4h symmetry as the reference phase for 2D monolayered HOP. It allows for detailed analysis of the spin-orbit coupling effects and structural transitions with corresponding electronic band folding. We further investigate the effects of octahedral tilting on the band gap, loss of inversion symmetry and possible Rashba effect, quantum confinement, and dielectric confinement related to the organic barrier, up to excitonic properties. Altogether, this paper aims to provide an interpretive and predictive framework for 3D and 2D layered HOP optoelectronic properties.

Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells

PubMed Central

Ray, Biswajit; Baradwaj, Aditya G.; Khan, Mohammad Ryyan; Boudouris, Bryan W.; Alam, Muhammad Ashraful

2015-01-01

The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. Here we show that the short-circuit current density from SS-OPV devices can be enhanced significantly (∼100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: (i) detailed numerical simulations, (ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and (iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. These insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials. PMID:26290582

Multifunctional Hybrid Multilayer Gate Dielectrics with Tunable Surface Energy for Ultralow-Power Organic and Amorphous Oxide Thin-Film Transistors.

PubMed

Byun, Hye-Ran; You, Eun-Ah; Ha, Young-Geun

2017-03-01

For large-area, printable, and flexible electronic applications using advanced semiconductors, novel dielectric materials with excellent capacitance, insulating property, thermal stability, and mechanical flexibility need to be developed to achieve high-performance, ultralow-voltage operation of thin-film transistors (TFTs). In this work, we first report on the facile fabrication of multifunctional hybrid multilayer gate dielectrics with tunable surface energy via a low-temperature solution-process to produce ultralow-voltage organic and amorphous oxide TFTs. The hybrid multilayer dielectric materials are constructed by iteratively stacking bifunctional phosphonic acid-based self-assembled monolayers combined with ultrathin high-k oxide layers. The nanoscopic thickness-controllable hybrid dielectrics exhibit the superior capacitance (up to 970 nF/cm 2 ), insulating property (leakage current densities <10 -7 A/cm 2 ), and thermal stability (up to 300 °C) as well as smooth surfaces (root-mean-square roughness <0.35 nm). In addition, the surface energy of the hybrid multilayer dielectrics are easily changed by switching between mono- and bifunctional phosphonic acid-based self-assembled monolayers for compatible fabrication with both organic and amorphous oxide semiconductors. Consequently, the hybrid multilayer dielectrics integrated into TFTs reveal their excellent dielectric functions to achieve high-performance, ultralow-voltage operation (< ± 2 V) for both organic and amorphous oxide TFTs. Because of the easily tunable surface energy, the multifunctional hybrid multilayer dielectrics can also be adapted for various organic and inorganic semiconductors, and metal gates in other device configurations, thus allowing diverse advanced electronic applications including ultralow-power and large-area electronic devices.

Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells.

PubMed

Ray, Biswajit; Baradwaj, Aditya G; Khan, Mohammad Ryyan; Boudouris, Bryan W; Alam, Muhammad Ashraful

2015-09-08

The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. Here we show that the short-circuit current density from SS-OPV devices can be enhanced significantly (∼100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: (i) detailed numerical simulations, (ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and (iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. These insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials.

Photoprecursor approach as an effective means for preparing multilayer organic semiconducting thin films by solution processes

PubMed Central

Yamaguchi, Yuji; Suzuki, Mitsuharu; Motoyama, Takao; Sugii, Shuhei; Katagiri, Chiho; Takahira, Katsuya; Ikeda, Shinya; Yamada, Hiroko; Nakayama, Ken-ichi

2014-01-01

The vertical composition profile of active layer has a major effect on the performance of organic photovoltaic devices (OPVs). While stepwise deposition of different materials is a conceptually straightforward method for controlled preparation of multi-component active layers, it is practically challenging for solution processes because of dissolution of the lower layer. Herein, we overcome this difficulty by employing the photoprecursor approach, in which a soluble photoprecursor is solution-deposited then photoconverted in situ to a poorly soluble organic semiconductor. This approach enables solution-processing of the p-i-n triple-layer architecture that has been suggested to be effective in obtaining efficient OPVs. We show that, when 2,6-dithienylanthracene and a fullerene derivative PC71BM are used as donor and acceptor, respectively, the best p-i-n OPV affords a higher photovoltaic efficiency than the corresponding p-n device by 24% and bulk-heterojunction device by 67%. The photoprecursor approach is also applied to preparation of three-component p-i-n films containing another donor 2,6-bis(5′-(2-ethylhexyl)-(2,2′-bithiophen)-5-yl)anthracene in the i-layer to provide a nearly doubled efficiency as compared to the original two-component p-i-n system. These results indicate that the present approach can serve as an effective means for controlled preparation of well-performing multi-component active layers in OPVs and related organic electronic devices. PMID:25413952

A novel single-stranded DNA detection method based on organic semiconductor heterojunction

NASA Astrophysics Data System (ADS)

Gu, Wen; Liu, Hongbo; Zhang, Xia; Zhang, Hao; Chen, Xiong; Wang, Jun

2016-12-01

We demonstrate a novel DNA detection method with low-cost and disposable advantages by utilizing F16CuPc/CuPc planar organic heterojunction device. Single-stranded DNA (ssDNA) molecules have been well immobilized on the surface of CuPc film observed by atomic force microscopy, producing an obvious electrical response of the device. The conductivity of the organic heterojunction film was significantly increased by ssDNA immobilization because ssDNA molecules brought additional positive charges at heterojunction interface. Furthermore, the thickness dependence of CuPc upper layer on the electrical response was studied to optimize the sensitivity. This study will be helpful for the development of organic heterojunction based biosensors.

Electroluminescence color tuning between green and red from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

NASA Astrophysics Data System (ADS)

Matsuda, Toshihiro; Hattori, Fumihiro; Iwata, Hideyuki; Ohzone, Takashi

2018-04-01

Color tunable electroluminescence (EL) from metal-oxide-semiconductor devices with the rare-earth elements Tb and Eu is reported. Organic compound liquid sources of (Tb + Ba) and Eu with various Eu/Tb ratios from 0.001 to 0.4 were spin-coated on an n+-Si substrate and annealed to form an oxide insulator layer. The EL spectra had only peaks corresponding to the intrashell Tb3+/Eu3+ transitions in the spectral range from green to red, and the intensity ratio of the peaks was appropriately tuned using the appropriate Eu/Tb ratios in liquid sources. Consequently, the EL emission colors linearly changed from yellowish green to yellowish orange and eventually to reddish orange on the CIE chromaticity diagram. The gate current +I G current also affected the EL colors for the medium-Eu/Tb-ratio device. The structure of the surface insulator films analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS) has four layers, namely, (Tb4O7 + Eu2O3), [Tb4O7 + Eu2O3 + (Tb/Eu/Ba)SiO x ], (Tb/Eu/Ba)SiO x , and SiO x -rich oxide. The EL mechanism proposed is that electrons injected from the Si substrate into the SiO x -rich oxide and Tb/Eu/Ba-silicate layers become hot electrons accelerated in a high electric field, and then these hot electrons excite Tb3+ and Eu3+ ions in the Tb4O7/Eu2O3 layers resulting in EL emission from Tb3+ and Eu3+ intrashell transitions.

Two-dimensional layered semiconductor/graphene heterostructures for solar photovoltaic applications.

PubMed

Shanmugam, Mariyappan; Jacobs-Gedrim, Robin; Song, Eui Sang; Yu, Bin

2014-11-07

Schottky barriers formed by graphene (monolayer, bilayer, and multilayer) on 2D layered semiconductor tungsten disulfide (WS2) nanosheets are explored for solar energy harvesting. The characteristics of the graphene-WS2 Schottky junction vary significantly with the number of graphene layers on WS2, resulting in differences in solar cell performance. Compared with monolayer or stacked bilayer graphene, multilayer graphene helps in achieving improved solar cell performance due to superior electrical conductivity. The all-layered-material Schottky barrier solar cell employing WS2 as a photoactive semiconductor exhibits efficient photon absorption in the visible spectral range, yielding 3.3% photoelectric conversion efficiency with multilayer graphene as the Schottky contact. Carrier transport at the graphene/WS2 interface and the interfacial recombination process in the Schottky barrier solar cells are examined.

Interface engineering of colloidal CdSe quantum dots thin films as acid-stable photocathodes for solar-driven hydrogen evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Hui; Wen, Peng; Hoxie, Adam

Colloidal semiconductor quantum dots-based (CQD) photocathodes for solar-driven hydrogen evolution have attracted significant attention due to their tunable size, nanostructured morphology, crystalline orientation, and band-gap. Here, we report a thin film heterojunction photocathode composed of organic PEDOT:PSS as a hole transport layer, CdSe CQDs as a semiconductor light absorber, and conformal Pt layer deposited by atomic layer deposition (ALD) serving as both a passivation layer and cocatalyst for hydrogen evolution. In neutral aqueous solution, a PEDOT:PSS/CdSe/Pt heterogeneous photocathode with 200 cycles of ALD Pt produces a photocurrent density of -1.08 mA/cm 2 (AM1.5G, 100 mW/cm 2) at a potential ofmore » 0 V vs. RHE (j 0) in neutral aqueous solution, which is nearly 12 times that of the pristine CdSe photocathode. This composite photocathode shows an onset potential for water reduction at +0.46 V vs. RHE and long-term stability with negligible degradation. In acidic electrolyte (pH = 1), where the hydrogen evolution reaction is more favorable but stability is limited due to photocorrosion, a thicker Pt film (300 cycles) is shown to greatly improve the device stability and a j 0 of -2.14 mA/cm 2 is obtained with only 8.3% activity degradation after 6 h, compared to 80% degradation under the same conditions when the less conformal electrodeposition method is used to deposit the Pt layer. Electrochemical impedance spectroscopy and time-resolved photoluminescence results indicate that these enhancements stem from a lower bulk charge recombination rate, higher interfacial charge transfer rate, and faster reaction kinetics. In conclusion, we believe that these interface engineering strategies can be extended to other colloidal semiconductors to construct more efficient and stable heterogeneous photoelectrodes for solar fuel production.« less

Interface engineering of colloidal CdSe quantum dots thin films as acid-stable photocathodes for solar-driven hydrogen evolution

DOE PAGES

Li, Hui; Wen, Peng; Hoxie, Adam; ...

2018-04-30

Colloidal semiconductor quantum dots-based (CQD) photocathodes for solar-driven hydrogen evolution have attracted significant attention due to their tunable size, nanostructured morphology, crystalline orientation, and band-gap. Here, we report a thin film heterojunction photocathode composed of organic PEDOT:PSS as a hole transport layer, CdSe CQDs as a semiconductor light absorber, and conformal Pt layer deposited by atomic layer deposition (ALD) serving as both a passivation layer and cocatalyst for hydrogen evolution. In neutral aqueous solution, a PEDOT:PSS/CdSe/Pt heterogeneous photocathode with 200 cycles of ALD Pt produces a photocurrent density of -1.08 mA/cm 2 (AM1.5G, 100 mW/cm 2) at a potential ofmore » 0 V vs. RHE (j 0) in neutral aqueous solution, which is nearly 12 times that of the pristine CdSe photocathode. This composite photocathode shows an onset potential for water reduction at +0.46 V vs. RHE and long-term stability with negligible degradation. In acidic electrolyte (pH = 1), where the hydrogen evolution reaction is more favorable but stability is limited due to photocorrosion, a thicker Pt film (300 cycles) is shown to greatly improve the device stability and a j 0 of -2.14 mA/cm 2 is obtained with only 8.3% activity degradation after 6 h, compared to 80% degradation under the same conditions when the less conformal electrodeposition method is used to deposit the Pt layer. Electrochemical impedance spectroscopy and time-resolved photoluminescence results indicate that these enhancements stem from a lower bulk charge recombination rate, higher interfacial charge transfer rate, and faster reaction kinetics. In conclusion, we believe that these interface engineering strategies can be extended to other colloidal semiconductors to construct more efficient and stable heterogeneous photoelectrodes for solar fuel production.« less

Interface Engineering of Colloidal CdSe Quantum Dot Thin Films as Acid-Stable Photocathodes for Solar-Driven Hydrogen Evolution.

PubMed

Li, Hui; Wen, Peng; Hoxie, Adam; Dun, Chaochao; Adhikari, Shiba; Li, Qi; Lu, Chang; Itanze, Dominique S; Jiang, Lin; Carroll, David; Lachgar, Abdou; Qiu, Yejun; Geyer, Scott M

2018-05-23

Colloidal semiconductor quantum dot (CQD)-based photocathodes for solar-driven hydrogen evolution have attracted significant attention because of their tunable size, nanostructured morphology, crystalline orientation, and band gap. Here, we report a thin film heterojunction photocathode composed of organic PEDOT:PSS as a hole transport layer, CdSe CQDs as a semiconductor light absorber, and conformal Pt layer deposited by atomic layer deposition (ALD) serving as both a passivation layer and cocatalyst for hydrogen evolution. In neutral aqueous solution, a PEDOT:PSS/CdSe/Pt heterogeneous photocathode with 200 cycles of ALD Pt produces a photocurrent density of -1.08 mA/cm 2 (AM-1.5G, 100 mW/cm 2 ) at a potential of 0 V versus reversible hydrogen electrode (RHE) ( j 0 ) in neutral aqueous solution, which is nearly 12 times that of the pristine CdSe photocathode. This composite photocathode shows an onset potential for water reduction at +0.46 V versus RHE and long-term stability with negligible degradation. In the acidic electrolyte (pH = 1), where the hydrogen evolution reaction is more favorable but stability is limited because of photocorrosion, a thicker Pt film (300 cycles) is shown to greatly improve the device stability and a j 0 of -2.14 mA/cm 2 is obtained with only 8.3% activity degradation after 6 h, compared with 80% degradation under the same conditions when the less conformal electrodeposition method is used to deposit the Pt layer. Electrochemical impedance spectroscopy and time-resolved photoluminescence results indicate that these enhancements stem from a lower bulk charge recombination rate, higher interfacial charge-transfer rate, and faster reaction kinetics. We believe that these interface engineering strategies can be extended to other colloidal semiconductors to construct more efficient and stable heterogeneous photoelectrodes for solar fuel production.

Proximity charge sensing for semiconductor detectors

DOEpatents

Luke, Paul N; Tindall, Craig S; Amman, Mark

2013-10-08

A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.

P-doped organic semiconductor: Potential replacement for PEDOT:PSS in organic photodetectors

NASA Astrophysics Data System (ADS)

Herrbach, J.; Revaux, A.; Vuillaume, D.; Kahn, A.

2016-08-01

In this work, we present an alternative to the use of PEDOT:PSS as hole transport and electron blocking layers in organic photodetectors processed by solution. As Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) is known to be sensitive to humidity, oxygen, and UV, removing this layer is essential for lifetime improvements. As a first step to achieving this goal, we need to find an alternative layer that fulfills the same role in order to obtain a working diode with similar or better performance. As a replacement, a layer of poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-c) p-doped with the dopant tris-[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF3)3) is used. This p-doped layer effectively lowers the hole injection barrier, and the low electron affinity of the polymer prevents the injection of electrons into the active layer. We show similar device performance under light and the improvements of detection performance with the doped layer in comparison with PEDOT:PSS, leading to a detectivity of 1.9 × 1013 cm (Hz)1/2 (W)-1, competitive with silicon diodes used in imaging applications. Moreover, contrary to PEDOT:PSS, no localization of the p-doped layer is needed, leading to a diode active area defined by the patterned electrodes.

High-resolution charge carrier mobility mapping of heterogeneous organic semiconductors

NASA Astrophysics Data System (ADS)

Button, Steven W.; Mativetsky, Jeffrey M.

2017-08-01

Organic electronic device performance is contingent on charge transport across a heterogeneous landscape of structural features. Methods are therefore needed to unravel the effects of local structure on overall electrical performance. Using conductive atomic force microscopy, we construct high-resolution out-of-plane hole mobility maps from arrays of 5000 to 16 000 current-voltage curves. To demonstrate the efficacy of this non-invasive approach for quantifying and mapping local differences in electrical performance due to structural heterogeneities, we investigate two thin film test systems, one bearing a heterogeneous crystal structure [solvent vapor annealed 5,11-Bis(triethylsilylethynyl)anthradithiophene (TES-ADT)—a small molecule organic semiconductor] and one bearing a heterogeneous chemical composition [p-DTS(FBTTh2)2:PC71BM—a high-performance organic photovoltaic active layer]. TES-ADT shows nearly an order of magnitude difference in hole mobility between semicrystalline and crystalline areas, along with a distinct boundary between the two regions, while p-DTS(FBTTh2)2:PC71BM exhibits subtle local variations in hole mobility and a nanoscale domain structure with features below 10 nm in size. We also demonstrate mapping of the built-in potential, which plays a significant role in organic light emitting diode and organic solar cell operation.

Facile fabrication of organic/inorganic nanotube heterojunction arrays for enhanced photoelectrochemical water splitting

NASA Astrophysics Data System (ADS)

Chen, Yingzhi; Li, Aoxiang; Yue, Xiaoqi; Wang, Lu-Ning; Huang, Zheng-Hong; Kang, Feiyu; Volinsky, Alex A.

2016-07-01

Organic/inorganic heterojunction photoanodes are appealing for making concurrent use of the highly photoactive organic semiconductors, and the efficient dielectric screening provided by their inorganic counterparts. In the present work, organic/inorganic nanotube heterojunction arrays composed of TiO2 nanotube arrays and a semiconducting N,N-(dicyclohexyl) perylene-3,4,9,10-tetracarboxylic diimide (PDi) layer were fabricated for photoelectrochemical water splitting. In this arrayed architecture, a PDi layer with a tunable thickness was coated on anodic TiO2 nanotube arrays by physical vapor deposition, which is advantageous for the formation of a uniform layer and an adequate interface contact between PDi and TiO2. The obtained PDi/TiO2 junction exhibited broadened visible light absorption, and an effective interface for enhanced photogenerated electron-hole separation, which is supported by the reduced charge transfer resistance and prolonged excitation lifetime via impedance spectroscopy analysis and fluorescence emission decay investigations. Consequently, such a heterojunction photoanode was photoresponsive to a wide visible light region of 400-600 nm, and thus demonstrated a highly enhanced photocurrent density at 1.23 V vs. a reversible hydrogen electrode. Additionally, the durability of such a photoanode can be guaranteed after long-time illumination because of the geometrical restraint imposed by the PDi aggregates. These results pave the way to discover new organic/inorganic assemblies for high-performance photoelectric applications and device integration.Organic/inorganic heterojunction photoanodes are appealing for making concurrent use of the highly photoactive organic semiconductors, and the efficient dielectric screening provided by their inorganic counterparts. In the present work, organic/inorganic nanotube heterojunction arrays composed of TiO2 nanotube arrays and a semiconducting N,N-(dicyclohexyl) perylene-3,4,9,10-tetracarboxylic diimide (PDi) layer were fabricated for photoelectrochemical water splitting. In this arrayed architecture, a PDi layer with a tunable thickness was coated on anodic TiO2 nanotube arrays by physical vapor deposition, which is advantageous for the formation of a uniform layer and an adequate interface contact between PDi and TiO2. The obtained PDi/TiO2 junction exhibited broadened visible light absorption, and an effective interface for enhanced photogenerated electron-hole separation, which is supported by the reduced charge transfer resistance and prolonged excitation lifetime via impedance spectroscopy analysis and fluorescence emission decay investigations. Consequently, such a heterojunction photoanode was photoresponsive to a wide visible light region of 400-600 nm, and thus demonstrated a highly enhanced photocurrent density at 1.23 V vs. a reversible hydrogen electrode. Additionally, the durability of such a photoanode can be guaranteed after long-time illumination because of the geometrical restraint imposed by the PDi aggregates. These results pave the way to discover new organic/inorganic assemblies for high-performance photoelectric applications and device integration. Electronic supplementary information (ESI) available: Additional structural characterization. See DOI: 10.1039/c5nr07893h

Conversion of type of quantum well structure

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng (Inventor)

2007-01-01

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Conversion of Type of Quantum Well Structure

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng (Inventor)

2007-01-01

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Electrically tunable infrared metamaterial devices

DOEpatents

Brener, Igal; Jun, Young Chul

2015-07-21

A wavelength-tunable, depletion-type infrared metamaterial optical device is provided. The device includes a thin, highly doped epilayer whose electrical permittivity can become negative at some infrared wavelengths. This highly-doped buried layer optically couples with a metamaterial layer. Changes in the transmission spectrum of the device can be induced via the electrical control of this optical coupling. An embodiment includes a contact layer of semiconductor material that is sufficiently doped for operation as a contact layer and that is effectively transparent to an operating range of infrared wavelengths, a thin, highly doped buried layer of epitaxially grown semiconductor material that overlies the contact layer, and a metallized layer overlying the buried layer and patterned as a resonant metamaterial.

Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application.

PubMed

Liu, Pan; Lin, Xiaoyang; Xu, Yong; Zhang, Boyu; Si, Zhizhong; Cao, Kaihua; Wei, Jiaqi; Zhao, Weisheng

2017-12-28

The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect.

Functionalized organic semiconductor molecules to enhance charge carrier injection in electroluminescent cell

NASA Astrophysics Data System (ADS)

Yalcin, Eyyup; Kara, Duygu Akin; Karakaya, Caner; Yigit, Mesude Zeliha; Havare, Ali Kemal; Can, Mustafa; Tozlu, Cem; Demic, Serafettin; Kus, Mahmut; Aboulouard, Abdelkhalk

2017-07-01

Organic semiconductor (OSC) materials as a charge carrier interface play an important role to improve the device performance of organic electroluminescent cells. In this study, 4,4″-bis(diphenyl amino)-1,1':3‧,1″-terphenyl-5'-carboxylic acid (TPA) and 4,4″-di-9H-carbazol-9-yl-1,1':3‧,1″-terphenyl-5'-carboxylic acid (CAR) has been designed and synthesized to modify indium tin oxide (ITO) layer as interface. Bare ITO and PEDOT:PSS coated on ITO was used as reference anode electrodes for comparison. Furthermore, PEDOT:PSS coated over CAR/ITO and TPA/ITO to observe stability of OSC molecules and to completely cover the ITO surface. Electrical, optical and surface characterizations were performed for each device. Almost all modified devices showed around 36% decrease at the turn on voltage with respect to bare ITO. The current density of bare ITO, ITO/CAR and ITO/TPA were measured as 288, 1525 and 1869 A/m2, respectively. By increasing current density, luminance of modified devices showed much better performance with respect to unmodified devices.

Thick layered semiconductor devices with water top-gates: High on-off ratio field-effect transistors and aqueous sensors.

PubMed

Huang, Yuan; Sutter, Eli; Wu, Liangmei; Xu, Hong; Bao, Lihong; Gao, Hong-Jun; Zhou, Xingjiang; Sutter, Peter

2018-06-21

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore de-ionized (DI) water as a solution top gate for field-effect switching of layered semiconductors including SnS2, MoS2, and black phosphorus. The DI water gate is easily fabricated, can sustain rapid bias changes, and its efficient coupling to layered materials provides high on-off current ratios, near-ideal sub-threshold swing, and enhanced short-channel behavior even for FETs with thick, bulk-like channels where such control is difficult to realize with conventional back-gating. Screening by the high-k solution gate eliminates hysteresis due to surface and interface trap states and substantially enhances the field-effect mobility. The onset of water electrolysis sets the ultimate limit to DI water gating at large negative gate bias. Measurements in this regime show promise for aqueous sensing, demonstrated here by the amperometric detection of glucose in aqueous solution. DI water gating of layered semiconductors can be harnessed in research on novel materials and devices, and it may with further development find broad applications in microelectronics and sensing.

Photovoltaic performance of block copolymer devices is independent of the crystalline texture in the active layer

DOE PAGES

Guo, Changhe; Lee, Youngmin; Lin, Yen -Hao; ...

2016-06-15

The electronic properties of organic semiconductors are strongly influenced by intermolecular packing. When cast as thin films, crystalline π-conjugated molecules are strongly textured, potentially leading to anisotropic charge transport. Consequently, it is hypothesized that the orientation of crystallites in the active layer plays an important role in charge extraction and organic photovoltaic device performance. Here we demonstrate orientation control of molecular packing from mostly face-on to edge-on configurations in the active layer of P3HT- b-PFTBT block copolymer photovoltaics using 1-chloronaphthalene as a solvent additive. The effect of molecular orientations in P3HT crystals on charge transport and solar cell performance ismore » examined. We find that optimized photovoltaic device performance is independent of the crystalline texture of P3HT. Our observations provide further insights into the molecular organization required for efficient charge transport and overall device efficiencies. That is, the dominant crystal orientation, whether face-on or edge-on, is not critical to organic solar cells. Furthermore, a broad distribution of crystallite orientations ensures pathways for charge transport in any direction and enables efficient charge extraction in photovoltaic devices.« less

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, Jr., Richard P.; Crawford, Mary H.

1996-01-01

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Method for producing a hybridization of detector array and integrated circuit for readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Grunthaner, Frank J. (Inventor)

1993-01-01

A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.

Inkjet-printing of non-volatile organic resistive devices and crossbar array structures

NASA Astrophysics Data System (ADS)

Sax, Stefan; Nau, Sebastian; Popovic, Karl; Bluemel, Alexander; Klug, Andreas; List-Kratochvil, Emil J. W.

2015-09-01

Due to the increasing demand for storage capacity in various electronic gadgets like mobile phones or tablets, new types of non-volatile memory devices have gained a lot of attention over the last few years. Especially multilevel conductance switching elements based on organic semiconductors are of great interest due to their relatively simple device architecture and their small feature size. Since organic semiconductors combine the electronic properties of inorganic materials with the mechanical characteristics of polymers, this class of materials is suitable for solution based large area device preparation techniques. Consequently, inkjet based deposition techniques are highly capable of facing preparation related challenges. By gradually replacing the evaporated electrodes with inkjet printed silver, the preparation related influence onto device performance parameters such as the ON/OFF ratio was investigated with IV measurements and high resolution transmission electron microscopy. Due to the electrode surface roughness the solvent load during the printing of the top electrode as well as organic layer inhomogeneity's the utilization in array applications is hampered. As a prototypical example a 1diode-1resistor element and a 2×2 subarray from 5×5 array matrix were fully characterized demonstrating the versatility of inkjet printing for device preparation.

A large-area wireless power-transmission sheet using printed organic transistors and plastic MEMS switches.

PubMed

Sekitani, Tsuyoshi; Takamiya, Makoto; Noguchi, Yoshiaki; Nakano, Shintaro; Kato, Yusaku; Sakurai, Takayasu; Someya, Takao

2007-06-01

The electronics fields face serious problems associated with electric power; these include the development of ecologically friendly power-generation systems and ultralow-power-consuming circuits. Moreover, there is a demand for developing new power-transmission methods in the imminent era of ambient electronics, in which a multitude of electronic devices such as sensor networks will be used in our daily life to enhance security, safety and convenience. We constructed a sheet-type wireless power-transmission system by using state-of-the-art printing technologies using advanced electronic functional inks. This became possible owing to recent progress in organic semiconductor technologies; the diversity of chemical syntheses and processes on organic materials has led to a new class of organic semiconductors, dielectric layers and metals with excellent electronic functionalities. The new system directly drives electronic devices by transmitting power of the order of tens of watts without connectors, thereby providing an easy-to-use and reliable power source. As all of the components are manufactured on plastic films, it is easy to place the wireless power-transmission sheet over desks, floors, walls and any other location imaginable.

Method and structure for passivating semiconductor material

DOEpatents

Pankove, Jacques I.

1981-01-01

A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory.

PubMed

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In 2 Ga 2 ZnO 7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO 2 (blocking oxide)/p ++ -Si (control gate) substrate, where 3 nm thick atomic layer deposited Al 2 O 3 (tunneling oxide) and 5 nm thick low-pressure CVD Si 3 N 4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F ) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory

NASA Astrophysics Data System (ADS)

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In2Ga2ZnO7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO2 (blocking oxide)/p++-Si (control gate) substrate, where 3 nm thick atomic layer deposited Al2O3 (tunneling oxide) and 5 nm thick low-pressure CVD Si3N4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies

NASA Astrophysics Data System (ADS)

Kotadiya, Naresh B.; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W. M.; Wetzelaer, Gert-Jan A. H.

2018-02-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

PubMed

Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

2018-04-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Release strategies for making transferable semiconductor structures, devices and device components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew

2016-05-24

Provided are methods for making a device or device component by providing a multi layer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Controlled growth of semiconductor crystals

DOEpatents

Bourret-Courchesne, Edith D.

1992-01-01

A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

Controlled growth of semiconductor crystals

DOEpatents

Bourret-Courchesne, E.D.

1992-07-21

A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

The preparation method of terahertz monolithic integrated device

NASA Astrophysics Data System (ADS)

Zhang, Cong; Su, Bo; He, Jingsuo; Zhang, Hongfei; Wu, Yaxiong; Zhang, Shengbo; Zhang, Cunlin

2018-01-01

The terahertz monolithic integrated device is to integrate the pumping area of the terahertz generation, the detection area of the terahertz receiving and the metal waveguide of terahertz transmission on the same substrate. The terahertz generation and detection device use a photoconductive antenna structure the metal waveguide use a microstrip line structure. The evanescent terahertz-bandwidth electric field extending above the terahertz transmission line interacts with, and is modified by, overlaid dielectric samples, thus enabling the characteristic vibrational absorption resonances in the sample to be probed. In this device structure, since the semiconductor substrate of the photoconductive antenna is located between the strip conductor and the dielectric layer of the microstrip line, and the semiconductor substrate cannot grow on the dielectric layer directly. So how to prepare the semiconductor substrate of the photoconductive antenna and how to bond the semiconductor substrate to the dielectric layer of the microstrip line is a key step in the terahertz monolithic integrated device. In order to solve this critical problem, the epitaxial wafer structure of the two semiconductor substrates is given and transferred to the desired substrate by two methods, respectively.

Casimir Pressure in Mds-Structures

NASA Astrophysics Data System (ADS)

Yurova, V. A.; Bukina, M. N.; Churkin, Yu. V.; Fedortsov, A. B.; Klimchitskaya, G. L.

2012-07-01

The Casimir pressure on the dielectric layer in metal-dielectric-semiconductor (MDS) structures is calculated in the framework of the Lifshitz theory at nonzero temperature. In this calculation the standard parameters of semiconductor devices with a thin dielectric layer are used. We consider the thickness of a layer decreasing from 40 to 1 nm. At the shortest thickness the Casimir pressure achieves 8 MPa. At small thicknesses the results are compared with the predictions of nonrelativistic theory.

Low amplified spontaneous emission threshold and suppression of electroluminescence efficiency roll-off in layers doped with ter(9,9'-spirobifluorene)

NASA Astrophysics Data System (ADS)

Inoue, Munetomo; Matsushima, Toshinori; Adachi, Chihaya

2016-03-01

We demonstrate that ter(9,9'-spirobifluorene) (TSBF) doped in a host matrix layer of 4,4'-bis(carbazol-9-yl)biphenyl (CBP) shows a low amplified spontaneous emission (ASE) threshold (Eth = 1.0 μJ cm-2) and suppressed electroluminescence efficiency roll-off at high current densities (no roll-off up to 100 mA cm-2). One origin of the low ASE threshold is that the TSBF-doped CBP layer possesses a very large radiative decay constant (kr = 1.1 × 109 s-1). Singlet-triplet annihilation is almost suppressed in the TSBF-doped CBP layer, which can be ascribed to the small overlap between the emission and triplet absorption of TSBF. Also, the small energy level difference between TSBF and CBP minimizes carrier trapping in TSBF, leading to the suppression of singlet-polaron annihilation. TSBF showed one of the lowest Eth and the most suppressed efficiency roll-off among organic laser dyes investigated in this study and, therefore, is believed to be a promising candidate to realize electrically pumped organic semiconductor laser diodes in the future.

Graphene-on-semiconductor substrates for analog electronics

DOEpatents

Lagally, Max G.; Cavallo, Francesca; Rojas-Delgado, Richard

2016-04-26

Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.

Low temperature junction growth using hot-wire chemical vapor deposition

DOEpatents

Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

2014-02-04

A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Method for reducing or eliminating interface defects in mismatched semiconductor epilayers

DOEpatents

Fitzgerald, Jr., Eugene A.; Ast, Dieter G.

1992-01-01

The present invention and process relates to crystal lattice mismatched semiconductor composite having a first semiconductor layer and a second semiconductor growth layer deposited thereon to form an interface wherein the growth layer can be deposited at thicknesses in excess of the critical thickness, even up to about 10.times. critical thickness. Such composite has an interface which is substantially free of interface defects. For example, the size of the growth areas in a mismatched In.sub.0.05 Ga.sub.0.95 As/(001)GaAs interface was controlled by fabricating 2-.mu.m high pillars of various lateral geometries and lateral dimensions before the epitaxial deposition of 3500.ANG. of In.sub.0.05 Ga.sub.0.95 As. The linear dislocation density at the interface was reduced from >5000 dislocations/cm to about zero for 25-.mu.m lateral dimensions and to less than 800 dislocations/cm for lateral dimensions as large as 100 .mu.m. The fabricated pillars control the lateral dimensions of the growth layer and block the glide of misfit dislocations with the resultant decrease in dislocation density.

Method for reducing or eliminating interface defects in mismatched semiconductor eiplayers

DOEpatents

Fitzgerald, Jr., Eugene A.; Ast, Dieter G.

1991-01-01

The present invention and process relates to crystal lattice mismatched semiconductor composite having a first semiconductor layer and a second semiconductor growth layer deposited thereon to form an interface wherein the growth layer can be deposited at thicknesses in excess of the critical thickness, even up to about 10x critical thickness. Such composite has an interface which is substantially free of interface defects. For example, the size of the growth areas in a mismatched In.sub.0.05 Ga.sub.0.95 As/(001)GaAs interface was controlled by fabricating 2-.mu.m high pillars of various lateral geometries and lateral dimensions before the epitaxial deposition of 3500.ANG. of In.sub.0.05 Ga.sub.0.95 As. The linear dislocation density at the interface was reduced from >5000 dislocations/cm to about zero for 25-.mu.m lateral dimensions and to less than 800 dislocations/cm for lateral dimensions as large as 100 .mu.m. The fabricated pillars control the lateral dimensions of the growth layer and block the glide of misfit dislocations with the resultant decrease in dislocation density.

Method for reducing or eliminating interface defects in mismatched semiconductor epilayers

DOEpatents

Fitzgerald, E.A. Jr.; Ast, D.G.

1992-10-20

The present invention and process relates to crystal lattice mismatched semiconductor composite having a first semiconductor layer and a second semiconductor growth layer deposited thereon to form an interface wherein the growth layer can be deposited at thicknesses in excess of the critical thickness, even up to about 10[times] critical thickness. Such composite has an interface which is substantially free of interface defects. For example, the size of the growth areas in a mismatched In[sub 0.05]Ga[sub 0.95]As/(001)GaAs interface was controlled by fabricating 2-[mu]m high pillars of various lateral geometries and lateral dimensions before the epitaxial deposition of 3500 [angstrom] of In[sub 0.05]Ga[sub 0.95]As. The linear dislocation density at the interface was reduced from >5000 dislocations/cm to about zero for 25-[mu]m lateral dimensions and to less than 800 dislocations/cm for lateral dimensions as large as 100 [mu]m. The fabricated pillars control the lateral dimensions of the growth layer and block the glide of misfit dislocations with the resultant decrease in dislocation density. 7 figs.

Engineering topological superconductors using surface atomic-layer/molecule hybrid materials

NASA Astrophysics Data System (ADS)

Uchihashi, Takashi

2015-08-01

Surface atomic-layer (SAL) superconductors consisting of epitaxially grown metal adatoms on a clean semiconductor surface have been recently established. Compared to conventional metal thin films, they have two important features: (i) space-inversion symmetry-breaking throughout the system and (ii) high sensitivity to surface adsorption of foreign species. These potentially lead to manifestation of the Rashba effect and a Zeeman field exerted by adsorbed magnetic organic molecules. After introduction of the archetypical SAL superconductor Si(111)-(√7 × √3)-In, we describe how these features are utilized to engineer a topological superconductor with Majorana fermions and discuss its promises and expected challenges.

Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

PubMed

Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

2011-08-01

Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) < 70 nA when I(on) > 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

Semiconductor light source with electrically tunable emission wavelength

DOEpatents

Belenky, Gregory [Port Jefferson, NY; Bruno, John D [Bowie, MD; Kisin, Mikhail V [Centereach, NY; Luryi, Serge [Setauket, NY; Shterengas, Leon [Centereach, NY; Suchalkin, Sergey [Centereach, NY; Tober, Richard L [Elkridge, MD

2011-01-25

A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.

Semiconductor-metal nanostructures: Scanning tunneling microscopy investigation of the fullerene-gold and manganese-germanium-silicon system

NASA Astrophysics Data System (ADS)

Liu, Hui

Nanostructures, assembled from a layer or cluster of atoms with size of the order of nanometers, have attracted much attention for decades, because it has been widely recognized that the properties of nanoscale materials are remarkably different from those of materials of large scale. As one of the most powerful techniques, Scanning Tunneling Microscopy (STM) has become an indispensable technique for studies in nanotechnology. This dissertation is focused on the investigation of the C60-Au system, which is relevant in photovoltaic applications and organic electronic devices, and the Mn-Ge-Si system which is central to the development of advanced spintronics system. The first part of the dissertation focuses on the C60-Au system. Exploring how fullerene molecules interact physically and electronically with each other and with other elements is highly relevant to the advancement of fullerene-based nanotechnology applications. The initial growth stage of C 60 thin film on graphite substrate has been investigated by STM at room temperature. It is observed that the C60 layer grows in a quasi-layer-by-layer mode and forms round 1st layer islands on the graphite surface. The fractal-dendritic growth of the 2nd layer islands has been successfully described by a combination of Monte Carlo simulation and molecular dynamics simulations. As a next step towards the application of fullerenes in device structures, the growth mechanisms of Au clusters on fullerene layers and co-deposition of Au and C60 were explored. The most prominent features of the growth of Au on C60 are the preferential nucleation of Au clusters at the graphite-first fullerene layer islands edge and the co-deposition of C60 and Au on graphite leading to the formation of highly organized structures, in which Au clusters are embedded in a ring of fullerene molecules with a constant width of about 4 nm. The second part of this dissertation concentrates on the Mn-Ge-Si system, a semiconductor/metal system, which is a potential building-block structure for the development of complex spin-electronic devices. In recent years the study of thin film magnetic materials and the doping of semiconductors with magnetically active dopant atoms has received increased attention due their potential applications in magnetic memory devices and spintronics. In particular, the importance of Mn-Ge-Si system emerges since it combines a technically relevant semiconductor surface with a metallic element with a large magnetic moment. The goal in this part is the early growth stage of Mn on a Si (100) 2x1surface, the formation of Mn-nanostructure and the interaction between Mn and Ge on the Si surface. The position of Mn atoms with respect to Si surface has been determined by high resolution STM images. It is found that Mn adatoms form relatively short monoatomic wires, with a typical length of 5 to about 20 atoms, which are oriented perpendicular to the Si-dimer rows. And at the same time, the modification of Si surface around Mn wires was observed. The formation of Mn silicide after annealing the sample was also studied. The stability of Mn wires during the growth of a Ge overlayer was investigated by comparing several STM images, which were taken at different bias voltages. Because of the different local density of states, Mn and Ge may be partially distinguished in STM images. It is turned out that Mn wires preserve their structures after the deposition of a small amount of Ge on the sample. And the growth of Ge at the early stage on Si surface has not been significantly influenced by the presence of Mn adatoms. In summary, an investigation of two semiconductor-metal nanostructures by STM has been reported in this dissertation.

Low trap states in in situ SiN{sub x}/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Xing; Ma, Jun; Jiang, Huaxing

2014-09-08

We report the use of SiN{sub x} grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiN{sub x}/AlN interface exhibits remarkably low trap state densities in the range of 10{sup 11}–10{sup 12 }cm{sup −2}eV{sup −1}. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiN{sub x} layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiN{sub x} as an effectivemore » gate dielectric for AlN/GaN MIS devices.« less

The Assembling of Poly (3-Octyl-Thiophene) on CVD Grown Single Layer Graphene

NASA Astrophysics Data System (ADS)

Jiang, Yanqiu; Yang, Ling; Guo, Zongxia; Lei, Shengbin

2015-12-01

The interface between organic semiconductor and graphene electrode, especially the structure of the first few molecular layers at the interface, is crucial for the device properties such as the charge transport in organic field effect transistors. In this work, we have used scanning tunneling microscopy to investigate the poly (3-octyl-thiophene) (P3OT)-graphene interface. Our results reveal the dynamic assembling of P3OT on single layer graphene. As on other substrates the epitaxial effect plays a role in determining the orientation of the P3OT assembling, however, the inter-thiophene distance along the backbone is consistent with that optimized in vaccum, no compression was observed. Adsorption of P3OT on ripples is weaker due to local curvature, which has been verified both by scanning tunneling microscopy and density functional theory simulation. Scanning tunneling microscopy also reveals that P3OT tends to form hairpin folds when meets a ripple.

Towards efficient and cost-effective inverted hybrid organic solar cells using inorganic semiconductor in the active layer

NASA Astrophysics Data System (ADS)

Imran, M.; Ikram, M.; Dilpazir, S.; Nafees, M.; Ali, S.; Geng, J.

2017-11-01

The article investigates the effects of NiO (p-type) and TiO2 (n-type) nanoparticles (NPs) on the performance of poly(3-hexylthiophene) (P3HT) and (phenyl-C61-butyric acid methylester) (PCBM) based devices with an inverse geometry. Various weight ratios of these nanoparticles were mixed in the polymer solution using 1,2-dichlorobenzene as solvent. An optimal amount of NPs-doped active layer exhibited higher power conversion efficiency (PCE) of 3.85% as compared to the reference cell, which exhibited an efficiency of 3.40% under white light illumination intensity of 100 mW/cm2. Enhanced PCE originates from increased film roughness and light harvesting due to increased absorption range upon mixing an optimal amount of NPs in the organic-based active layer. Further addition of NiO and TiO2 concentration relative to PCBM resulted in significant agglomeration of nanoparticles leading to degraded device parameters.

Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same

DOEpatents

Weng, Xiaojun; Goldman, Rachel S.

2006-06-06

A method for forming a semi-conductor material is provided that comprises forming a donor substrate constructed of GaAs, providing a receiver substrate, implanting nitrogen into the donor substrate to form an implanted layer comprising GaAs and nitrogen. The implanted layer is bonded to the receiver substrate and annealed to form GaAsN and nitrogen micro-blisters in the implanted layer. The micro-blisters allow the implanted layer to be cleaved from the donor substrate.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y. Simon; Deb, Satyen K.

1990-01-01

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.

Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

DOEpatents

Weihs, Timothy P.; Barbee, Jr., Troy W.

2002-01-01

Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

Prediction and theoretical characterization of p-type organic semiconductor crystals for field-effect transistor applications.

PubMed

Atahan-Evrenk, Sule; Aspuru-Guzik, Alán

2014-01-01

The theoretical prediction and characterization of the solid-state structure of organic semiconductors has tremendous potential for the discovery of new high performance materials. To date, the theoretical analysis mostly relied on the availability of crystal structures obtained through X-ray diffraction. However, the theoretical prediction of the crystal structures of organic semiconductor molecules remains a challenge. This review highlights some of the recent advances in the determination of structure-property relationships of the known organic semiconductor single-crystals and summarizes a few available studies on the prediction of the crystal structures of p-type organic semiconductors for transistor applications.

Miniaturized Metal (Metal Alloy)/PdO(x)/SiC Hydrogen and Hydrocarbon Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W. (Inventor); Xu, Jennifer C. (Inventor); Lukco, Dorothy (Inventor)

2008-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO(x)). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600 C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sided sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Copper thiocyanate: An attractive hole transport/extraction layer for use in organic photovoltaic cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Treat, Neil D., E-mail: neil.treat@imperial.ac.uk, E-mail: t.anthopoulos@imperial.ac.uk; Stingelin, Natalie; Yaacobi-Gross, Nir

2015-07-06

We report the advantageous properties of the inorganic molecular semiconductor copper(I) thiocyanate (CuSCN) for use as a hole collection/transport layer (HTL) in organic photovoltaic (OPV) cells. CuSCN possesses desirable HTL energy levels [i.e., valence band at −5.35 eV, 0.35 eV deeper than poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS)], which produces a 17% increase in power conversion efficiency (PCE) relative to PEDOT:PSS-based devices. In addition, a two-fold increase in shunt resistance for the solar cells measured in dark conditions is achieved. Ultimately, CuSCN enables polymer:fullerene based OPV cells to achieve PCE > 8%. CuSCN continues to offer promise as a chemically stable and straightforward replacement for the commonly usedmore » PEDOT:PSS.« less

Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode

DOEpatents

Menon, Madhu; Sheetz, Michael; Sunkara, Mahendra Kumar; Pendyala, Chandrashekhar; Sunkara, Swathi; Jasinski, Jacek B.

2017-09-05

The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.

The role of thin MgO(100) epilayer for polarized charge injection into top-emitting OLED

NASA Astrophysics Data System (ADS)

Kim, Tae Hee; Jong Lee, Nyun; Bae, Yu Jeong; Cho, Hyunduck; Lee, Changhee; Ito, Eisuke

2012-02-01

A new top-emitting OLED (TOLED) structure, which is formed on an Si(100) substrate and an epitaxial MgO(100)/Fe(100)/MgO(100) bottom electrode, was investigated. Our TOLED design included a semi-transparent cathode Al, a stack of conventional organic electroluminescent layers (α-NPD/Alq3/LiF) and a thin Cu-Phthalocyanine (CuPc) film to enhance the hole injection into the luminescent layers. At room temperature (RT), magnetoluminescence of ˜5 % was observed in low magnetic field up to 1 Tesla , which is obviously larger than that of the OLEDs with epitaxial and polycrystalline Fe anodes without MgO(100) covering layer. Our results indicate that the magnetic field effect on the electroluminescence could be strongly related to the magnetic properties of bottom electrode, more precisely the interfacial properties between CuPc layer and the anode. Therefore, we focused on understanding interface electronic states and energy alignment by using x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy. Our results showed that the use of appropriate oxide layers could represent a new interface engineering technique for improving reliability and functionality in organic semiconductor devices.

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

PubMed Central

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Abstract Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlOx), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers. PMID:28634499

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

PubMed

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

Transparent contacts for stacked compound photovoltaic cells

DOEpatents

Tauke-Pedretti, Anna; Cederberg, Jeffrey; Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis

2016-11-29

A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.

Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

DOEpatents

Sherohman, John W [Livermore, CA; Coombs, III, Arthur W.; Yee, Jick Hong [Livermore, CA; Wu, Kuang Jen J [Cupertino, CA

2007-05-29

For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

Dry etching method for compound semiconductors

DOEpatents

Shul, Randy J.; Constantine, Christopher

1997-01-01

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

Dry etching method for compound semiconductors

DOEpatents

Shul, R.J.; Constantine, C.

1997-04-29

A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors.

PubMed

Jie, Wenjing; Hao, Jianhua

2014-06-21

Fundamental studies and applications of 2-dimensional (2D) graphene may be deepened and broadened via combining graphene sheets with various functional materials, which have been extended from the traditional insulator of SiO2 to a versatile range of dielectrics, semiconductors and metals, as well as organic compounds. Among them, ferroelectric materials have received much attention due to their unique ferroelectric polarization. As a result, many attractive characteristics can be shown in graphene/ferroelectric hybrid systems. On the other hand, graphene can be integrated with conventional semiconductors and some newly-discovered 2D layered materials to form distinct Schottky junctions, yielding fascinating behaviours and exhibiting the potential for various applications in future functional devices. This review article is an attempt to illustrate the most recent progress in the fabrication, operation principle, characterization, and promising applications of graphene-based hybrid structures combined with various functional materials, ranging from ferroelectrics to semiconductors. We focus on mechanically exfoliated and chemical-vapor-deposited graphene sheets integrated in numerous advanced devices. Some typical hybrid structures have been highlighted, aiming at potential applications in non-volatile memories, transparent flexible electrodes, solar cells, photodetectors, and so on.

Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors

NASA Astrophysics Data System (ADS)

Jie, Wenjing; Hao, Jianhua

2014-05-01

Fundamental studies and applications of 2-dimensional (2D) graphene may be deepened and broadened via combining graphene sheets with various functional materials, which have been extended from the traditional insulator of SiO2 to a versatile range of dielectrics, semiconductors and metals, as well as organic compounds. Among them, ferroelectric materials have received much attention due to their unique ferroelectric polarization. As a result, many attractive characteristics can be shown in graphene/ferroelectric hybrid systems. On the other hand, graphene can be integrated with conventional semiconductors and some newly-discovered 2D layered materials to form distinct Schottky junctions, yielding fascinating behaviours and exhibiting the potential for various applications in future functional devices. This review article is an attempt to illustrate the most recent progress in the fabrication, operation principle, characterization, and promising applications of graphene-based hybrid structures combined with various functional materials, ranging from ferroelectrics to semiconductors. We focus on mechanically exfoliated and chemical-vapor-deposited graphene sheets integrated in numerous advanced devices. Some typical hybrid structures have been highlighted, aiming at potential applications in non-volatile memories, transparent flexible electrodes, solar cells, photodetectors, and so on.

Highly reproducible alkali metal doping system for organic crystals through enhanced diffusion of alkali metal by secondary thermal activation.

PubMed

Lee, Jinho; Park, Chibeom; Song, Intek; Koo, Jin Young; Yoon, Taekyung; Kim, Jun Sung; Choi, Hee Cheul

2018-05-16

In this paper, we report an efficient alkali metal doping system for organic single crystals. Our system employs an enhanced diffusion method for the introduction of alkali metal into organic single crystals by controlling the sample temperature to induce secondary thermal activation. Using this system, we achieved intercalation of potassium into picene single crystals with closed packed crystal structures. Using optical microscopy and Raman spectroscopy, we confirmed that the resulting samples were uniformly doped and became K 2 picene single crystal, while only parts of the crystal are doped and transformed into K 2 picene without secondary thermal activation. Moreover, using a customized electrical measurement system, the insulator-to-semiconductor transition of picene single crystals upon doping was confirmed by in situ electrical conductivity and ex situ temperature-dependent resistivity measurements. X-ray diffraction studies showed that potassium atoms were intercalated between molecular layers of picene, and doped samples did not show any KH- nor KOH-related peaks, indicating that picene molecules are retained without structural decomposition. During recent decades, tremendous efforts have been exerted to develop high-performance organic semiconductors and superconductors, whereas as little attention has been devoted to doped organic crystals. Our method will enable efficient alkali metal doping of organic crystals and will be a resource for future systematic studies on the electrical property changes of these organic crystals upon doping.

Observation of hole hopping via dopant in MoOx-doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices

NASA Astrophysics Data System (ADS)

Qiao, Xianfeng; Chen, Jiangshan; Li, Xinglin; Ma, Dongge

2010-05-01

Conduction mechanism in molybdenum trioxide (MoOx)-doped hole- and electron-type organic semiconductors is investigated. The used hole-transporting materials are N ,N'-diphenyl-N ,N'-bis(1-naphthylphenyl)-1, 1'-biphen4, 4'-diamine, 4',4″-tri(N-carbazolyl)triphenylamine, 4, 4'-N,N-dicarbazole-biphenyl, and pentacene and the used electron-transporting material is (8-quinolinolato) aluminum (Alq3). It can be seen that the hole conductivity is significantly enhanced upon MoOx doping, and more importantly, dominant hole current could be realized in a typical electron-transport material Alq3 by doping MoOx. Hence, high efficiency organic light-emitting devices can also be achieved even using MoOx-doped Alq3 film as hole transporting layer. The mechanism investigation indicates that the MoOx plays an important role in the hole transport. It is showed that the MoOx serves as the hole hopping sites, whereas the used organic materials serve as the transport medium and determine the magnitude of transport current. Furthermore, it is found that doping MoOx into the organic materials also reduces the energy and position disorders of the doped organic films, which are well demonstrated by the study on transport characteristics of the doped films at various temperatures.

N-Type 2D Organic Single Crystals for High-Performance Organic Field-Effect Transistors and Near-Infrared Phototransistors.

PubMed

Wang, Cong; Ren, Xiaochen; Xu, Chunhui; Fu, Beibei; Wang, Ruihao; Zhang, Xiaotao; Li, Rongjin; Li, Hongxiang; Dong, Huanli; Zhen, Yonggang; Lei, Shengbin; Jiang, Lang; Hu, Wenping

2018-04-01

Organic field-effect transistors and near-infrared (NIR) organic phototransistors (OPTs) have attracted world's attention in many fields in the past decades. In general, the sensitivity, distinguishing the signal from noise, is the key parameter to evaluate the performance of NIR OPTs, which is decided by responsivity and dark current. 2D single crystal films of organic semiconductors (2DCOS) are promising functional materials due to their long-range order in spite of only few molecular layers. Herein, for the first time, air-stable 2DCOS of n-type organic semiconductors (a furan-thiophene quinoidal compound, TFT-CN) with strong absorbance around 830 nm, by the facile drop-casting method on the surface of water are successfully prepared. Almost millimeter-sized TFT-CN 2DCOS are obtained and their thickness is below 5 nm. A competitive field-effect electron mobility (1.36 cm 2 V -1 s -1 ) and high on/off ratio (up to 10 8 ) are obtained in air. Impressively, the ultrasensitive NIR phototransistors operating at the off-state exhibit a very low dark current of ≈0.3 pA and an ultrahigh detectivity (D*) exceeding 6 × 10 14 Jones because the devices can operate in full depletion at the off-state, superior to the majority of the reported organic-based NIR phototransistors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Organic semiconductor crystals.

PubMed

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Direct Free Carrier Photogeneration in Single Layer and Stacked Organic Photovoltaic Devices.

PubMed

Chandran, Hrisheekesh Thachoth; Ng, Tsz-Wai; Foo, Yishu; Li, Ho-Wa; Qing, Jian; Liu, Xiao-Ke; Chan, Chiu-Yee; Wong, Fu-Lung; Zapien, Juan Antonio; Tsang, Sai-Wing; Lo, Ming-Fai; Lee, Chun-Sing

2017-06-01

High performance organic photovoltaic devices typically rely on type-II P/N junctions for assisting exciton dissociation. Heremans and co-workers recently reported a high efficiency device with a third organic layer which is spatially separated from the active P/N junction; but still contributes to the carrier generation by passing its energy to the P/N junction via a long-range exciton energy transfer mechanism. In this study the authors show that there is an additional mechanism contributing to the high efficiency. Some bipolar materials (e.g., subnaphthalocyanine chloride (SubNc) and subphthalocyanine chloride (SubPc)) are observed to generate free carriers much more effectively than typical organic semiconductors upon photoexcitation. Single-layer devices with SubNc or SubPc sandwiched between two electrodes can give power conversion efficiencies 30 times higher than those of reported single-layer devices. In addition, internal quantum efficiencies (IQEs) of bilayer devices with opposite stacking sequences (i.e., SubNc/SubPc vs SubPc/SubNc) are found to be the sum of IQEs of single layer devices. These results confirm that SubNc and SubPc can directly generate free carriers upon photoexcitation without assistance from a P/N junction. These allow them to be stacked onto each other with reversible sequence or simply stacking onto another P/N junction and contribute to the photocarrier generation. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photodetector with enhanced light absorption

DOEpatents

Kane, James

1985-01-01

A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.

Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-07-09

A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

Tuneable photonic device including an array of metamaterial resonators

DOEpatents

Brener, Igal; Wanke, Michael; Benz, Alexander

2017-03-14

A photonic apparatus includes a metamaterial resonator array overlying and electromagnetically coupled to a vertically stacked plurality of quantum wells defined in a semiconductor body. An arrangement of electrical contact layers is provided for facilitating the application of a bias voltage across the quantum well stack. Those portions of the semiconductor body that lie between the electrical contact layers are conformed to provide an electrically conductive path between the contact layers and through the quantum well stack.

Apparatus and method of manufacture for an imager equipped with a cross-talk barrier

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2012-01-01

An imager apparatus and associated starting material are provided. In one embodiment, an imager is provided including a silicon layer of a first conductivity type acting as a junction anode. Such silicon layer is adapted to convert light to photoelectrons. Also included is a semiconductor well of a second conductivity type formed in the silicon layer for acting as a junction cathode. Still yet, a barrier is formed adjacent to the semiconductor well. In another embodiment, a starting material is provided including a first silicon layer and an oxide layer disposed adjacent to the first silicon layer. Also included is a second silicon layer disposed adjacent to the oxide layer opposite the first silicon layer. Such second silicon layer is further equipped with an associated passivation layer and/or barrier.

Surface Polarity and Self-Structured Nanogrooves Collaboratively Oriented Molecular Packing for High Crystallinity toward Efficient Charge Transport.

PubMed

Ji, Deyang; Xu, Xiaomin; Jiang, Longfeng; Amirjalayer, Saeed; Jiang, Lang; Zhen, Yonggang; Zou, Ye; Yao, Yifan; Dong, Huanli; Yu, Junsheng; Fuchs, Harald; Hu, Wenping

2017-02-22

Efficient charge transport in organic semiconductors is essential for construction of high performance optoelectronic devices. Herein, for the first time, we demonstrate that poly(amic acid) (PAA), a facilely deposited and annealing-free dielectric layer, can tailor the growth of organic semiconductor films with large area and high crystallinity toward efficient charge transport and high mobility in their thin film transistors. Pentacene is used as a model system to demonstrate the concept with mobility up to 30.6 cm 2 V -1 s -1 , comparable to its high quality single crystal devices. The structure of PAA has corrugations with OH groups pointing out of the surface, and the presence of an amide bond further allows adjacent polymer strands to interact via hydrogen bonding, leading to a self-rippled surface perpendicular to the corrugation. On the other hand, the strong polar groups (-COOH/-CONH) of PAA could provide repulsive forces between PAA and pentacene, which results in the vertical orientation of pentacene on the dielectric surface. Indeed, in comparison with its imidized counterpart polyimide (PI), PAA dielectric significantly enhances the film crystallinity, drastically increases the domain size, and decreases the interface trap density, giving rise to superior device performance with high mobility. This concept can be extended to more organic semiconducting systems, e.g., 2,6-diphenylanthracene (DPA), tetracene, copper phthalocyanine (CuPc), and copper hexadecafluorophthalocyanine (F 16 CuPc), demonstrating the general applicability. The results show the importance of combining surface nanogrooves with the strong polarity in orienting the molecular arrangement for high crystallinity toward efficient charge transport in organic semiconductors.

Charge carrier transport and optical properties of SAM-induced conducting channel in organic semiconductors.

NASA Astrophysics Data System (ADS)

Podzorov, Vitaly

2009-03-01

Certain types of self-assembled monolayers (SAM) grown directly at the surface of organic semiconductors can induce a high surface conductivity in these materials [1]. For example, the conductivity induced by perfluorinated alkyl silanes in organic molecular crystals approaches 10 to -5 Siemens per square. The observed large electronic effect opens new opportunities for nanoscale surface functionalization of organic semiconductors and provides experimental access to the regime of high carrier density. Here, we will discuss temperature variable measurements of SAM-induced conductivity in several types of organic semiconductors. [1]. M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson and V. Podzorov, ``Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers'', Nature Mat. 7, 84 (2008).

Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells

DOE PAGES

Ray, Biswajit; Baradwaj, Aditya G.; Khan, Mohammad Ryyan; ...

2015-08-19

The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. In this paper, we show that the short-circuit current density from SS-OPVmore » devices can be enhanced significantly (~100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: ( i) detailed numerical simulations, ( ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and ( iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. Finally, these insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials.« less

Observation of turnover of spontaneous polarization in ferroelectric layer of pentacene/poly-(vinylidene-trifluoroethylene) double-layer capacitor under photo illumination by optical second-harmonic generation measurement

NASA Astrophysics Data System (ADS)

Shi, Zhemin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2016-04-01

The details of turnover process of spontaneous polarization and associated carrier motions in indium-tin oxide/poly-(vinylidene-trifluoroethylene)/pentacene/Au capacitor were analyzed by coupling displacement current measurement (DCM) and electric-field-induced optical second-harmonic generation (EFISHG) measurement. A model was set up from DCM results to depict the relationship between electric field in semiconductor layer and applied external voltage, proving that photo illumination effect on the spontaneous polarization process lied in variation of semiconductor conductivity. The EFISHG measurement directly and selectively probed the electric field distribution in semiconductor layer, modifying the model and revealing detailed carrier behaviors involving photo illumination effect, dipole reversal, and interfacial charging in the device. A further decrease of DCM current in the low voltage region under illumination was found as the result of illumination effect, and the result was argued based on the changing of the total capacitance of the double-layer capacitors.

van der Waals epitaxial two-dimensional CdSxSe(1-x) semiconductor alloys with tunable-composition and application to flexible optoelectronics.

PubMed

Xia, Jing; Zhao, Yun-Xuan; Wang, Lei; Li, Xuan-Ze; Gu, Yi-Yi; Cheng, Hua-Qiu; Meng, Xiang-Min

2017-09-21

Despite the substantial progress in the development of two-dimensional (2D) materials from conventional layered crystals, it still remains particularly challenging to produce high-quality 2D non-layered semiconductor alloys which may bring in some unique properties and new functions. In this work, the synthesis of well-oriented 2D non-layered CdS x Se (1-x) semiconductor alloy flakes with tunable compositions and optical properties is established. Structural analysis reveals that the 2D non-layered alloys follow an incommensurate van der Waals epitaxial growth pattern. Photoluminescence measurements show that the 2D alloys have composition-dependent direct bandgaps with the emission peak varying from 1.8 eV to 2.3 eV, coinciding well with the density functional theory calculations. Furthermore, photodetectors based on the CdS x Se (1-x) flakes exhibit a high photoresponsivity of 703 A W -1 with an external quantum efficiency of 1.94 × 10 3 and a response time of 39 ms. Flexible devices fabricated on a thin mica substrate display good mechanical stability upon repeated bending. This work suggests a facile and general method to produce high-quality 2D non-layered semiconductor alloys for next-generation optoelectronic devices.

Suppressing molecular vibrations in organic semiconductors by inducing strain

PubMed Central

Kubo, Takayoshi; Häusermann, Roger; Tsurumi, Junto; Soeda, Junshi; Okada, Yugo; Yamashita, Yu; Akamatsu, Norihisa; Shishido, Atsushi; Mitsui, Chikahiko; Okamoto, Toshihiro; Yanagisawa, Susumu; Matsui, Hiroyuki; Takeya, Jun

2016-01-01

Organic molecular semiconductors are solution processable, enabling the growth of large-area single-crystal semiconductors. Improving the performance of organic semiconductor devices by increasing the charge mobility is an ongoing quest, which calls for novel molecular and material design, and improved processing conditions. Here we show a method to increase the charge mobility in organic single-crystal field-effect transistors, by taking advantage of the inherent softness of organic semiconductors. We compress the crystal lattice uniaxially by bending the flexible devices, leading to an improved charge transport. The mobility increases from 9.7 to 16.5 cm2 V−1 s−1 by 70% under 3% strain. In-depth analysis indicates that compressing the crystal structure directly restricts the vibration of the molecules, thus suppresses dynamic disorder, a unique mechanism in organic semiconductors. Since strain can be easily induced during the fabrication process, we expect our method to be exploited to build high-performance organic devices. PMID:27040501

Suppressing molecular vibrations in organic semiconductors by inducing strain.

PubMed

Kubo, Takayoshi; Häusermann, Roger; Tsurumi, Junto; Soeda, Junshi; Okada, Yugo; Yamashita, Yu; Akamatsu, Norihisa; Shishido, Atsushi; Mitsui, Chikahiko; Okamoto, Toshihiro; Yanagisawa, Susumu; Matsui, Hiroyuki; Takeya, Jun

2016-04-04

Organic molecular semiconductors are solution processable, enabling the growth of large-area single-crystal semiconductors. Improving the performance of organic semiconductor devices by increasing the charge mobility is an ongoing quest, which calls for novel molecular and material design, and improved processing conditions. Here we show a method to increase the charge mobility in organic single-crystal field-effect transistors, by taking advantage of the inherent softness of organic semiconductors. We compress the crystal lattice uniaxially by bending the flexible devices, leading to an improved charge transport. The mobility increases from 9.7 to 16.5 cm(2) V(-1) s(-1) by 70% under 3% strain. In-depth analysis indicates that compressing the crystal structure directly restricts the vibration of the molecules, thus suppresses dynamic disorder, a unique mechanism in organic semiconductors. Since strain can be easily induced during the fabrication process, we expect our method to be exploited to build high-performance organic devices.

Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.

PubMed

Zhang, Congcong; Chen, Penglei; Hu, Wenping

2016-03-09

Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, C.H.; Evans, J.T. Jr.

1998-11-24

A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, Carleton H.; Evans, Jr., Joseph Tate

1998-01-01

A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer

NASA Astrophysics Data System (ADS)

Pak, Jinsu; Min, Misook; Cho, Kyungjune; Lien, Der-Hsien; Ahn, Geun Ho; Jang, Jingon; Yoo, Daekyoung; Chung, Seungjun; Javey, Ali; Lee, Takhee

2016-10-01

Photoswitching response times (rise and decay times) of a vertical organic and inorganic heterostructure with p-type copper phthalocyanine (CuPc) and n-type molybdenum disulfide (MoS2) semiconductors are investigated. By stacking a CuPc layer on MoS2 field effect transistors, better photodetection capability and fast photoswitching rise and decay phenomena are observed. Specifically, with a 2 nm-thick CuPc layer on the MoS2 channel, the photoswitching decay time decreases from 3.57 s to 0.18 s. The p-type CuPc layer, as a passivation layer, prevents the absorption of oxygen on the surface of the MoS2 channel layer, which results in a shortened photoswitching decay time because adsorbed oxygen destroys the balanced ratio of electrons and holes, leading to the interruption of recombination processes. The suggested heterostructure may deliver enhanced photodetection abilities and photoswitching characteristics for realizing ultra-thin and sensitive photodetectors.

Method of fabricating germanium and gallium arsenide devices

NASA Technical Reports Server (NTRS)

Jhabvala, Murzban (Inventor)

1990-01-01

A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

Wholly Aromatic Ether-Imides as n-Type Semiconductors

NASA Technical Reports Server (NTRS)

Weiser, Erik; St. Clair, Terry L.; Dingemans, Theo J.; Samulski, Edward T.; Irene, Gene

2006-01-01

Some wholly aromatic ether-imides consisting of rod-shaped, relatively-low-mass molecules that can form liquid crystals have been investigated for potential utility as electron-donor-type (ntype) organic semiconductors. It is envisioned that after further research to improve understanding of their physical and chemical properties, compounds of this type would be used to make thin film semiconductor devices (e.g., photovoltaic cells and field-effect transistors) on flexible electronic-circuit substrates. This investigation was inspired by several prior developments: Poly(ether-imides) [PEIs] are a class of engineering plastics that have been used extensively in the form of films in a variety of electronic applications, including insulating layers, circuit boards, and low-permittivity coatings. Wholly aromatic PEIs containing naphthalene and perylene moieties have been shown to be useful as electrochromic polymers. More recently, low-molecular-weight imides comprising naphthalene-based molecules with terminal fluorinated tails were shown to be useful as n-type organic semiconductors in such devices as field-effect transistors and Schottky diodes. Poly(etherimide)s as structural resins have been extensively investigated at NASA Langley Research Center for over 30 years. More recently, the need for multi-functional materials has become increasingly important. This n-type semiconductor illustrates the scope of current work towards new families of PEIs that not only can be used as structural resins for carbon-fiber reinforced composites, but also can function as sensors. Such a multi-functional material would permit so-called in-situ health monitoring of composite structures during service. The work presented here demonstrates that parts of the PEI backbone can be used as an n-type semiconductor with such materials being sensitive to damage, temperature, stress, and pressure. In the near future, multi-functional or "smart" composite structures are envisioned to be able to communicate such important parameters to the flight crew and provide vital information with respect to the operational status of their aircraft.

Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures

NASA Astrophysics Data System (ADS)

Crook, Adam M.; Nair, Hari P.; Ferrer, Domingo A.; Bank, Seth R.

2011-08-01

We present a growth method that overcomes the mismatch in rotational symmetry of ErAs and conventional III-V semiconductors, allowing for epitaxially integrated semimetal/semiconductor heterostructures. Transmission electron microscopy and reflection high-energy electron diffraction reveal defect-free overgrowth of ErAs layers, consisting of >2× the total amount of ErAs that can be embedded with conventional layer-by-layer growth methods. We utilize epitaxial ErAs nanoparticles, overgrown with GaAs, as a seed to grow full films of ErAs. Growth proceeds by diffusion of erbium atoms through the GaAs spacer, which remains registered to the underlying substrate, preventing planar defect formation during subsequent GaAs growth. This growth method is promising for metal/semiconductor heterostructures that serve as embedded Ohmic contacts to epitaxial layers and epitaxially integrated active plasmonic devices.

Thiophene-Based Organic Semiconductors.

PubMed

Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

2017-10-24

Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

Conduit for high temperature transfer of molten semiconductor crystalline material

NASA Technical Reports Server (NTRS)

Fiegl, George (Inventor); Torbet, Walter (Inventor)

1983-01-01

A conduit for high temperature transfer of molten semiconductor crystalline material consists of a composite structure incorporating a quartz transfer tube as the innermost member, with an outer thermally insulating layer designed to serve the dual purposes of minimizing heat losses from the quartz tube and maintaining mechanical strength and rigidity of the conduit at the elevated temperatures encountered. The composite structure ensures that the molten semiconductor material only comes in contact with a material (quartz) with which it is compatible, while the outer layer structure reinforces the quartz tube, which becomes somewhat soft at molten semiconductor temperatures. To further aid in preventing cooling of the molten semiconductor, a distributed, electric resistance heater is in contact with the surface of the quartz tube over most of its length. The quartz tube has short end portions which extend through the surface of the semiconductor melt and which are lef bare of the thermal insulation. The heater is designed to provide an increased heat input per unit area in the region adjacent these end portions.

Photodetector having high speed and sensitivity

DOEpatents

Morse, Jeffrey D.; Mariella, Jr., Raymond P.

1991-01-01

The present invention provides a photodetector having an advantageous combination of sensitivity and speed; it has a high sensitivity while retaining high speed. In a preferred embodiment, visible light is detected, but in some embodiments, x-rays can be detected, and in other embodiments infrared can be detected. The present invention comprises a photodetector having an active layer, and a recombination layer. The active layer has a surface exposed to light to be detected, and comprises a semiconductor, having a bandgap graded so that carriers formed due to interaction of the active layer with the incident radiation tend to be swept away from the exposed surface. The graded semiconductor material in the active layer preferably comprises Al.sub.1-x Ga.sub.x As. An additional sub-layer of graded In.sub.1-y Ga.sub.y As may be included between the Al.sub.1-x Ga.sub.x As layer and the recombination layer. The recombination layer comprises a semiconductor material having a short recombination time such as a defective GaAs layer grown in a low temperature process. The recombination layer is positioned adjacent to the active layer so that carriers from the active layer tend to be swept into the recombination layer. In an embodiment, the photodetector may comprise one or more additional layers stacked below the active and recombination layers. These additional layers may include another active layer and another recombination layer to absorb radiation not absorbed while passing through the first layers. A photodetector having a stacked configuration may have enhanced sensitivity and responsiveness at selected wavelengths such as infrared.

Infrared emitting device and method

DOEpatents

Kurtz, S.R.; Biefeld, R.M.; Dawson, L.R.; Howard, A.J.; Baucom, K.C.

1997-04-29

The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns. 8 figs.

Fused thiophene and its periphery fluorinated substitution derivatives: a theoretical study for organic semiconductors

NASA Astrophysics Data System (ADS)

Wei, Hui-Ling; Shi, Ya-Rui; Liu, Yu-Fang

2015-06-01

A series of phenyl end-capped derivatives of benzo[d,d‧]thieno[3,2-b4,5- b‧]dithiophene (BTDT) with periphery-fluorinated substitutions (PFS) were systematically investigated by using density functional theory (DFT) combined with the Marcus-Hush electron transfer theory. The substituting effects of PFS were discussed. Compared with the original compounds, (i) the PFS compounds have a relatively higher efficiency of charge transport, lower barriers of electron injection, and larger HOMO-LUMO gaps; (ii) the air-stability and the device performance are enhanced by PFS; and (iii) the HOMO-LUMO transitions in the absorption spectrum of the PFS compounds show an obvious blue-shift trend. The perfluorophenylbisbenzo[d, d‧]thieno[3,2-b4,5-b‧]dithiophene (BpF-BTDT) is found to be the most stable and most effective compound in charge transport among the investigated compounds, and it is suggested as an ambipolar semiconducting material. The results of electronic coupling of the bisbenzo[d, d‧]thieno[3,2-b 4,5- b‧]dithiophene (BBTDT) derivatives show that the orbital interaction is mainly contributed by the neighboring molecule in the two dimensional (2D) layer. The PFS compounds have lower oxidization potential, ionization potential, and electron affinity values than the corresponding original ones, which suggest that fluorination can enhance the performance of the thiophene-based organic solar cells. These findings provide a better understanding of the PFS effects on organic semiconductors and may help to design high-performance semiconductor materials.

Miniaturized metal (metal alloy)/ PdO.sub.x/SiC hydrogen and hydrocarbon gas sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W. (Inventor); Xu, Jennifer C. (Inventor); Lukco, Dorothy (Inventor)

2011-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO.sub.x ). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600.degree. C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Miniaturized metal (metal alloy)/ PdO.sub.x/SiC hydrogen and hydrocarbon gas sensors

NASA Technical Reports Server (NTRS)

Xu, Jennifer C. (Inventor); Hunter, Gary W. (Inventor); Lukco, Dorothy (Inventor)

2008-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO.sub.x). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600.degree. C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Effects of different self-assembled monolayers on thin-film morphology: a combined DFT/MD simulation protocol.

PubMed

Alberga, Domenico; Mangiatordi, Giuseppe Felice; Motta, Alessandro; Nicolotti, Orazio; Lattanzi, Gianluca

2015-10-06

Organic thin film transistors (OTFTs) are multilayer field-effect transistors that employ an organic conjugated material as semiconductor. Several experimental groups have recently demonstrated that the insertion of an organic self-assembled monolayer (SAM) between the dielectric and the semiconductive layer is responsible for a sensible improvement of the OTFT performances in terms of an increased charge carrier mobility caused by a higher degree of order in the organic semiconductor layer. Here, we describe a combined periodic density functional theory (DFT) and classical molecular dynamics (MD) protocol applied to four different SAMs and a pentacene monolayer deposited onto their surfaces. In particular, we investigate the morphology and the surface of the four SAMs and the translational, orientational, and nematic order of the monolayer through the calculation of several distribution functions and order parameters pointing out the differences among the systems and relating them to known experimental results. Our calculations also suggest that small differences in the SAM molecular design will produce remarkable differences in the SAM surface and monolayer order. In particular, our simulations explain how a SAM with a bulky terminal group results in an irregular and rough surface that determines the deposition of a disordered semiconductive monolayer. On the contrary, SAMs with a small terminal group generate smooth surfaces with uninterrupted periodicity, thus favoring the formation of an ordered pentacene monolayer that increases the mobility of charge carriers and improves the overall performances of the OTFT devices. Our results clearly point out that the in silico procedure presented here might be of help in tuning the design of SAMs in order to improve the quality of OTFT devices.

Method for making a photodetector with enhanced light absorption

DOEpatents

Kane, James

1987-05-05

A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.

Epitaxial growth of CoO films on semiconductor and metal substrates by constructing a complex heterostructure

NASA Astrophysics Data System (ADS)

Entani, S.; Kiguchi, M.; Saiki, K.; Koma, A.

2003-01-01

Epitaxial growth of CoO films was studied using reflection high-energy electron diffraction (RHEED), electron energy loss spectroscopy (EELS), ultraviolet photoelectron spectroscopy (UPS) and Auger electron spectroscopy (AES). The RHEED results indicated that an epitaxial CoO film grew on semiconductor and metal substrates (CoO (0 0 1)∥GaAs (0 0 1), Cu (0 0 1), Ag (0 0 1) and [1 0 0]CoO∥[1 0 0] substrates) by constructing a complex heterostructure with two alkali halide buffer layers. The AES, EELS and UPS results showed that the grown CoO film had almost the same electronic structure as bulk CoO. We could show that use of alkali halide buffer layers was a good way to grow metal oxide films on semiconductor and metal substrates in an O 2 atmosphere. The alkali halide layers not only works as glue to connect very dissimilar materials but also prevents oxidation of metal and semiconductor substrates.

The role of ultra-thin SiO2 layers in metal-insulator-semiconductor (MIS) photoelectrochemical devices (Presentation Recording)

NASA Astrophysics Data System (ADS)

Esposito, Daniel V.

2015-08-01

Solid-state junctions based on a metal-insulator-semiconductor (MIS) architecture are of great interest for a number of optoelectronic applications such as photovoltaics, photoelectrochemical cells, and photodetection. One major advantage of the MIS junction compared to the closely related metal-semiconductor junction, or Schottky junction, is that the thin insulating layer (1-3 nm thick) that separates the metal and semiconductor can significantly reduce the density of undesirable interfacial mid-gap states. The reduction in mid-gap states helps "un-pin" the junction, allowing for significantly higher built-in-voltages to be achieved. A second major advantage of the MIS junction is that the thin insulating layer can also protect the underlying semiconductor from corrosion in an electrochemical environment, making the MIS architecture well-suited for application in (photo)electrochemical applications. In this presentation, discontinuous Si-based MIS junctions immersed in electrolyte are explored for use as i.) photoelectrodes for solar-water splitting in photoelectrochemical cells (PECs) and ii.) position-sensitive photodetectors. The development and optimization of MIS photoelectrodes for both of these applications relies heavily on understanding how processing of the thin SiO2 layer impacts the properties of nano- and micro-scale MIS junctions, as well as the interactions of the insulating layer with the electrolyte. In this work, we systematically explore the effects of insulator thickness, synthesis method, and chemical treatment on the photoelectrochemical and electrochemical properties of these MIS devices. It is shown that electrolyte-induced inversion plays a critical role in determining the charge carrier dynamics within the MIS photoelectrodes for both applications.

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI(3-x)Cl(x) perovskite solar cells.

PubMed

Edri, Eran; Kirmayer, Saar; Mukhopadhyay, Sabyasachi; Gartsman, Konstantin; Hodes, Gary; Cahen, David

2014-03-11

Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p- and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains.

Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors.

PubMed

Wu, Kunjie; Li, Hongwei; Li, Liqiang; Zhang, Suna; Chen, Xiaosong; Xu, Zeyang; Zhang, Xi; Hu, Wenping; Chi, Lifeng; Gao, Xike; Meng, Yancheng

2016-06-28

Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y.S.; Deb, S.K.

1990-10-02

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. 6 figs.

Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

DOEpatents

Madan, A.

1984-12-10

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

Release strategies for making transferable semiconductor structures, devices and device components

DOEpatents

Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

2014-11-25

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Release strategies for making transferable semiconductor structures, devices and device components

DOEpatents

Rogers, John A [Champaign, IL; Nuzzo, Ralph G [Champaign, IL; Meitl, Matthew [Raleigh, NC; Ko, Heung Cho [Urbana, IL; Yoon, Jongseung [Urbana, IL; Menard, Etienne [Durham, NC; Baca, Alfred J [Urbana, IL

2011-04-26

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Novel nano-semiconductor film layer supported nano-Pd Complex Nanostructured Catalyst Pd/Ⓕ-MeOx/AC for High Efficient Selective Hydrogenation of Phenol to Cyclohexanone.

PubMed

Si, Jiaqi; Ouyang, Wenbing; Zhang, Yanji; Xu, Wentao; Zhou, Jicheng

2017-04-28

Supported metal as a type of heterogeneous catalysts are the most widely used in industrial processes. High dispersion of the metal particles of supported catalyst is a key factor in determining the performance of such catalysts. Here we report a novel catalyst Pd/Ⓕ-MeO x /AC with complex nanostructured, Pd nanoparticles supported on the platelike nano-semiconductor film/activated carbon, prepared by the photocatalytic reduction method, which exhibited high efficient catalytic performance for selective hydrogenation of phenol to cyclohexanone. Conversion of phenol achieved up to more than 99% with a lower mole ratio (0.5%) of active components Pd and phenol within 2 h at 70 °C. The synergistic effect of metal nanoparticles and nano-semiconductors support layer and the greatly increasing of contact interface of nano-metal-semiconductors may be responsible for the high efficiency. This work provides a clear demonstration that complex nanostructured catalysts with nano-metal and nano-semiconductor film layer supported on high specific surface AC can yield enhanced catalytic activity and can afford promising approach for developing new supported catalyst.

The Development of Layered Photonic Band Gap Structures Using a Micro-Transfer Molding Technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutherland, Kevin Jerome

Photonic band gap (PBG) crystals are periodic dielectric structures that manipulate electromagnetic radiation in a manner similar to semiconductor devices manipulating electrons. Whereas a semiconductor material exhibits an electronic band gap in which electrons cannot exist, similarly, a photonic crystal containing a photonic band gap does not allow the propagation of specific frequencies of electromagnetic radiation. This phenomenon results from the destructive Bragg diffraction interference that a wave propagating at a specific frequency will experience because of the periodic change in dielectric permitivity. This gives rise to a variety of optical applications for improving the efficiency and effectiveness of opto-electronicmore » devices. These applications are reviewed later. Several methods are currently used to fabricate photonic crystals, which are also discussed in detail. This research involves a layer-by-layer micro-transfer molding ({mu}TM) and stacking method to create three-dimensional FCC structures of epoxy or titania. The structures, once reduced significantly in size can be infiltrated with an organic gain media and stacked on a semiconductor to improve the efficiency of an electronically pumped light-emitting diode. Photonic band gap structures have been proven to effectively create a band gap for certain frequencies of electro-magnetic radiation in the microwave and near-infrared ranges. The objective of this research project was originally two-fold: to fabricate a three dimensional (3-D) structure of a size scaled to prohibit electromagnetic propagation within the visible wavelength range, and then to characterize that structure using laser dye emission spectra. As a master mold has not yet been developed for the micro transfer molding technique in the visible range, the research was limited to scaling down the length scale as much as possible with the current available technology and characterizing these structures with other methods.« less

Prototypical Organic–Oxide Interface: Intramolecular Resolution of Sexiphenyl on In 2O 3 (111)

DOE PAGES

Wagner, Margareta; Hofinger, Jakob; Setvin, Martin; ...

2018-03-28

The performance of an organic semiconductor device is critically determined by the geometric alignment, orientation, and ordering of the organic molecules. Although an organic multilayer eventually adopts the crystal structure of the organic material, the alignment and configuration at the interface with the substrate/electrode material are essential for charge injection into the organic layer. This work focuses on the prototypical organic semiconductor para-sexiphenyl (6P) adsorbed on In 2O 3(111), the thermodynamically most stable surface of the material that the most common transparent conducting oxide, indium tin oxide, is based on. The onset of nucleation and formation of the first monolayermore » are followed with atomically resolved scanning tunneling microscopy and noncontact atomic force microscopy (nc-AFM). Annealing to 200 °C provides sufficient thermal energy for the molecules to orient themselves along the high-symmetry directions of the surface, leading to a single adsorption site. The AFM data suggests an essentially planar adsorption geometry. With increasing coverage, the 6P molecules first form a loose network with a poor long-range order. Eventually, the molecules reorient into an ordered monolayer. In conclusion, this first monolayer has a densely packed, well-ordered (2 × 1) structure with one 6P per In 2O 3(111) substrate unit cell, that is, a molecular density of 5.64 × 10 13 cm –2.« less

Prototypical Organic–Oxide Interface: Intramolecular Resolution of Sexiphenyl on In 2O 3 (111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wagner, Margareta; Hofinger, Jakob; Setvin, Martin

The performance of an organic semiconductor device is critically determined by the geometric alignment, orientation, and ordering of the organic molecules. Although an organic multilayer eventually adopts the crystal structure of the organic material, the alignment and configuration at the interface with the substrate/electrode material are essential for charge injection into the organic layer. This work focuses on the prototypical organic semiconductor para-sexiphenyl (6P) adsorbed on In 2O 3(111), the thermodynamically most stable surface of the material that the most common transparent conducting oxide, indium tin oxide, is based on. The onset of nucleation and formation of the first monolayermore » are followed with atomically resolved scanning tunneling microscopy and noncontact atomic force microscopy (nc-AFM). Annealing to 200 °C provides sufficient thermal energy for the molecules to orient themselves along the high-symmetry directions of the surface, leading to a single adsorption site. The AFM data suggests an essentially planar adsorption geometry. With increasing coverage, the 6P molecules first form a loose network with a poor long-range order. Eventually, the molecules reorient into an ordered monolayer. In conclusion, this first monolayer has a densely packed, well-ordered (2 × 1) structure with one 6P per In 2O 3(111) substrate unit cell, that is, a molecular density of 5.64 × 10 13 cm –2.« less

Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

DOEpatents

Fan, John C. C.; Tsaur, Bor-Yeu; Gale, Ronald P.; Davis, Frances M.

1992-02-25

Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

DOEpatents

Fan, John C. C.; Tsaur, Bor-Yeu; Gale, Ronald P.; Davis, Frances M.

1986-12-30

Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Turkulets, Yury; Shalish, Ilan

2018-01-01

Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies mostly on simulated band structures that are hardly ever verified experimentally. Here, we present a method that experimentally evaluates bandgap, band offsets, and electric fields, in complex multi-semiconductor layered structures, and it does so simultaneously in all the layers. The method uses a modest optical photocurrent spectroscopy setup at ambient conditions. The results are analyzed using a simple model for electro-absorption. As an example, we apply the method to a typical GaN high electron mobility transistor structure. Measurements under various external electric fields allow us to experimentally construct band diagrams, not only at equilibrium but also under any other working conditions of the device. The electric fields are then used to obtain the charge carrier density and mobility in the quantum well as a function of the gate voltage over the entire range of operating conditions of the device. The principles exemplified here may serve as guidelines for the development of methods for simultaneous characterization of all the layers in complex, multi-semiconductor structures.

Highly Sensitive Flexible Pressure Sensors Based on Printed Organic Transistors with Centro-Apically Self-Organized Organic Semiconductor Microstructures.

PubMed

Yeo, So Young; Park, Sangsik; Yi, Yeon Jin; Kim, Do Hwan; Lim, Jung Ah

2017-12-13

A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa -1 and a rapid response time of <20 ms with a high reliability over 1000 cycles. The flexibility and high performance of the 3D OSC FET pressure sensor were exploited in the successful application of our sensors to real-time monitoring of the radial artery pulse, which is useful for healthcare monitoring, and to touch sensing in the e-skin of a realistic prosthetic hand.

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures.

PubMed

Chen, Ruei-San; Tang, Chih-Che; Shen, Wei-Chu; Huang, Ying-Sheng

2015-12-05

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal-semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 Ω(-) (1) cm(-) (1), with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed. Similar results can be obtained for other layer semiconductor materials such as MoS2 and WS2.

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

PubMed Central

Chen, Ruei-San; Tang, Chih-Che; Shen, Wei-Chu; Huang, Ying-Sheng

2015-01-01

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal–semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 Ω−1 cm−1, with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed. Similar results can be obtained for other layer semiconductor materials such as MoS2 and WS2. PMID:26710105

Infrared nanoantenna apparatus and method for the manufacture thereof

DOEpatents

Peters, David W.; Davids, Paul; Leonhardt, Darin; Kim, Jin K.; Wendt, Joel R.; Klem, John F.

2014-06-10

An exemplary embodiment of the present invention is a photodetector comprising a semiconductor body, a periodically patterned metal nanoantenna disposed on a surface of the semiconductor body, and at least one electrode separate from the nanoantenna. The semiconductor body comprises an active layer in sufficient proximity to the nanoantenna for plasmonic coupling thereto. The nanoantenna is dimensioned to absorb electromagnetic radiation in at least some wavelengths not more than 12 .mu.m that are effective for plasmonic coupling into the active layer. The electrode is part of an electrode arrangement for obtaining a photovoltage or photocurrent in operation under appropriate stimulation.

Plasma Reflection in Multigrain Layers of Narrow-Bandgap Semiconductors

NASA Astrophysics Data System (ADS)

Zhukov, N. D.; Shishkin, M. I.; Rokakh, A. G.

2018-04-01

Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15-25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ˜7 μm) is characterized by an absorption band at 2.1-2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50-70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.

Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

PubMed

Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

2016-03-09

We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.

Semiconductor laser devices having lateral refractive index tailoring

DOEpatents

Ashby, Carol I. H.; Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1990-01-01

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

37 CFR 211.5 - Deposit of identifying material.

Code of Federal Regulations, 2011 CFR

2011-07-01

... fixed in the form of the semiconductor chip product in which it was first commercially exploited... photograph of each layer of the work fixed in a semiconductor chip product. The visually perceptible... complete form of the mask work as fixed in a semiconductor product. (ii) Where the mask work contribution...