Synthesis of Platelike {100} SrTiO3 Particles by Topochemical Microcrystal Conversion and Fabrication of Grain-Oriented Ceramics

NASA Astrophysics Data System (ADS)

Saito, Yasuyoshi; Takao, Hisaaki

2006-09-01

Platelike SrTiO3 particles with a cubic perovskite structure were synthesized by topochemical microcrystal conversion (TMC) from platelike precursor particles of layer-structured SrBi4Ti4O15 at 950 °C. SrTiO3 particles preserved the shape of precursor particles, and had a thickness of approximately 0.5 μm and a width of 5-10 μm. X-ray diffraction analysis revealed that in the TMC reaction, the crystallographic {001} plane of SrBi4Ti4O15 is converted into the {100} plane of SrTiO3. Using the platelike SrTiO3 particles as a template in templated grain growth method, dense {100} grain-oriented SrTiO3 ceramics having a {100} orientation degree (Lotgering’s factor) higher than 91% could be fabricated at sintering temperatures between 1350 and 1550 °C. The maximum orientation factor reached 99.3%.

Orientation Control of Interfacial Magnetism at La 0.67Sr 0.33MnO 3/SrTiO 3 Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Er-Jia; Charlton, Timothy; Ambaye, Haile

Understanding the magnetism at the interface between a ferromagnet and an insulator is essential because the commonly posited magnetic “dead” layer close to an interface can be problematic in magnetic tunnel junctions. Previously, degradation of the magnetic interface was attributed to charge discontinuity across the interface. In this paper, the interfacial magnetism was investigated using three identically prepared La 0.67Sr 0.33MnO 3 (LSMO) thin films grown on different oriented SrTiO 3 (STO) substrates by polarized neutron reflectometry. In all cases the magnetization at the LSMO/STO interface is larger than the film bulk. We show that the interfacial magnetization is largestmore » across the LSMO/STO interfaces with (001) and (111) orientations, which have the largest net charge discontinuities across the interfaces. In contrast, the magnetization of LSMO/STO across the (110) interface, the orientation with no net charge discontinuity, is the smallest of the three orientations. We show that a magnetically degraded interface is not intrinsic to LSMO/STO heterostructures. Finally, the approach to use different crystallographic orientations provides a means to investigate the influence of charge discontinuity on the interfacial magnetization.« less

Orientation Control of Interfacial Magnetism at La 0.67Sr 0.33MnO 3/SrTiO 3 Interfaces

DOE PAGES

Guo, Er-Jia; Charlton, Timothy; Ambaye, Haile; ...

2017-05-16

Understanding the magnetism at the interface between a ferromagnet and an insulator is essential because the commonly posited magnetic “dead” layer close to an interface can be problematic in magnetic tunnel junctions. Previously, degradation of the magnetic interface was attributed to charge discontinuity across the interface. In this paper, the interfacial magnetism was investigated using three identically prepared La 0.67Sr 0.33MnO 3 (LSMO) thin films grown on different oriented SrTiO 3 (STO) substrates by polarized neutron reflectometry. In all cases the magnetization at the LSMO/STO interface is larger than the film bulk. We show that the interfacial magnetization is largestmore » across the LSMO/STO interfaces with (001) and (111) orientations, which have the largest net charge discontinuities across the interfaces. In contrast, the magnetization of LSMO/STO across the (110) interface, the orientation with no net charge discontinuity, is the smallest of the three orientations. We show that a magnetically degraded interface is not intrinsic to LSMO/STO heterostructures. Finally, the approach to use different crystallographic orientations provides a means to investigate the influence of charge discontinuity on the interfacial magnetization.« less

Structure and magnetic properties of Fe-Co-B alloy thin films prepared on cubic (001) single-crystal substrates

NASA Astrophysics Data System (ADS)

Ohtake, Mitsuru; Serizawa, Kana; Futamoto, Masaaki; Kirino, Fumiyoshi; Inaba, Nobuyuki

2018-04-01

Fe70Co30 and (Fe70Co30)0.95B5 (at. %) alloy films of 5 nm thickness are prepared by sputtering on cubic (001) oxide substrates at 200 °C. The lattice mismatch between film and substrate is varied from -4.2%, 0%, to +3.5% by employing MgO, MgAl2O4, and SrTiO3 substrates, respectively. Fe70Co30 and (Fe70Co30)0.95B5 single-crystal films with bcc structure grow epitaxially on all the substrates in the orientation relationship of (001)[110]film || (001)[100]substrate. The in-plane and out-of-plane lattice constants, a and c, are in agreement within small differences ranging between +1.1% and -0.9% with the value of bulk bcc-Fe70Co30 crystal, even though there exist the lattice mismatches of -4.2% and +3.5%. The result indicates that misfit dislocations are introduced around the film/substrate interface when films are deposited on MgO and SrTiO3 substrates. The single-crystal films show in-plane magnetic anisotropies with the easy magnetization direction of bcc[100], which are reflecting the magnetocrystalline anisotropy of bulk Fe70Co30 crystal.

Interfacial dislocations in (111) oriented (Ba 0.7Sr 0.3)TiO 3 films on SrTiO 3 single crystal

DOE PAGES

Shen, Xuan; Yamada, Tomoaki; Lin, Ruoqian; ...

2015-10-08

In this study, we have investigated the interfacial structure of epitaxial (Ba,Sr)TiO 3 films grown on (111)-oriented SrTiO 3 single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a<110> comprised of a misfit dislocation along <112>, and threading dislocations along <110> or <100>. The misfit dislocation with Burgers vector of a <110> can dissociate into two ½ a <110> partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography,more » we retrieved the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba 0.7Sr 0.3)TiO 3 films.« less

Realization of single terminated surface of perovskite oxide single crystals and their band profile: (LaAlO3)0.3(Sr2AlTaO6)0.7, SrTiO3 and KTaO3 case study

NASA Astrophysics Data System (ADS)

Tomar, Ruchi; Wadehra, Neha; Budhiraja, Vaishali; Prakash, Bhanu; Chakraverty, S.

2018-01-01

To characterize the physical properties of thin films without ambiguity and design interface with new functionalities, it is essential to have detailed knowledge of physical properties and appropriate estimation of the band profile of perovskite oxide substrates. We have developed and demonstrated a chemical free unified framework to realize single terminated surface of KTaO3, (LaAlO3)0.3 (Sr2AlTaO6)0.7 and SrTiO3 (001) oriented single crystals. The electronic band line-up of these single crystal substrates, using a combination of optical spectroscopy and Kelvin Probe Force Microscopy, has been constructed. A polar-polar interface of KTaO3 and LaBO3 (B-Transition metal ion) before and after the possible surface/electronic reconstruction has also been schematically presented.

Epitaxial growth and properties of YBa2Cu3O(x)-Pb(Zr(0.6)Ti(0.4))O3-YBa2Cu3O(x) trilayer structure by laser ablation

NASA Astrophysics Data System (ADS)

Boikov, Iu. A.; Esaian, S. K.; Ivanov, Z. G.; Brorsson, G.; Claeson, T.; Lee, J.; Safari, A.

1992-08-01

YBa2Cu3O(x)Pb(Zr(0.6)Ti(0.4))O3-YBa2Cu3O(x) multilayer structure has been grown on SrTiO3 and Al2O3 substrates using laser ablation. The deposition conditions for the growth of trilayers and their properties are studied in this investigation. Scanning electron microscope images and X-ray diffraction analyses indicate that all the constituent films in the trilayer grow epitaxially on SrTiO3 and were highly oriented on Al2O3. Transport measurements on these multilayers show that top YBa2Cu3O(x) films have good superconducting properties.

Substrate-induced dielectric polarization in thin films of lead-free (Sr0.5Bi0.5)2Mn2-xTixO6-δ perovskites grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Álvarez-Serrano, I.; Ruiz de Larramendi, I.; López, M. L.; Veiga, M. L.

2017-03-01

Thin films of SrBiMn2-xTixO6-δ have been fabricated by Pulsed Laser Deposition on SrTiO3 [100] and [111] substrates. Their texture, width, homogeneity and morphology are evaluated by means of XRD, SEM, XPS, whereas complex impedance spectroscopy is employed to analyze their electrical response. The thickness values range between 80 and 900 nm depending on the experimental conditions. The epitaxial growing could be interpreted in terms of two contributions of microstructural origin: a matrix part and some polycrystalline surface formations (hemi-spheres). Texture studies suggest a fiber-type orientated morphology coherently with the Scanning Electron Microscopy images. XPS analyses indicate a segregation regarding A-sublattice cations, which features depend on the substrate orientation. This segregation could be connected to the development of nanopolar regions. Impedance data show the electrical polarization in the samples to be enhanced compared to bulk response of corresponding powdered samples. A relaxor behavior which fits a Vogel-Fulcher law is obtained for x = 0.50 whereas an almost frequency-independent relaxor ferroelectric behavior is registered for the thinnest film of x = 0.25 composition grown on SrTiO3 [111] substrate. The influence of compositional and structural aspects in the obtained dielectric response is analyzed.

BaFe2As2/Fe Bilayers with [001]-tilt Grain Boundary on MgO and SrTiO3 Bicrystal Substrates

NASA Astrophysics Data System (ADS)

Iida, K.; Haindl, S.; Kurth, F.; Hänisch, J.; Schulz, L.; Holzapfel, B.

Co-doped BaFe2As2 (Ba-122) can be realized on both MgO and SrTiO3 bicrystal substrates with [001]-tilt grain boundary by employing Fe buffer layers. However, an additional spinel (i.e. MgAl2O4) buffer between Fe and SrTiO3 is necessary since an epitaxial, smooth surface of Fe layer can not be grown on bare SrTiO3. Both types of bicrystal films show good crystalline quality.

Surface properties of atomically flat poly-crystalline SrTiO3

PubMed Central

Woo, Sungmin; Jeong, Hoidong; Lee, Sang A.; Seo, Hosung; Lacotte, Morgane; David, Adrian; Kim, Hyun You; Prellier, Wilfrid; Kim, Yunseok; Choi, Woo Seok

2015-01-01

Comparison between single- and the poly-crystalline structures provides essential information on the role of long-range translational symmetry and grain boundaries. In particular, by comparing single- and poly-crystalline transition metal oxides (TMOs), one can study intriguing physical phenomena such as electronic and ionic conduction at the grain boundaries, phonon propagation, and various domain properties. In order to make an accurate comparison, however, both single- and poly-crystalline samples should have the same quality, e.g., stoichiometry, crystallinity, thickness, etc. Here, by studying the surface properties of atomically flat poly-crystalline SrTiO3 (STO), we propose an approach to simultaneously fabricate both single- and poly-crystalline epitaxial TMO thin films on STO substrates. In order to grow TMOs epitaxially with atomic precision, an atomically flat, single-terminated surface of the substrate is a prerequisite. We first examined (100), (110), and (111) oriented single-crystalline STO surfaces, which required different annealing conditions to achieve atomically flat surfaces, depending on the surface energy. A poly-crystalline STO surface was then prepared at the optimum condition for which all the domains with different crystallographic orientations could be successfully flattened. Based on our atomically flat poly-crystalline STO substrates, we envision expansion of the studies regarding the TMO domains and grain boundaries. PMID:25744275

Iso-oriented monolayer α-MoO 3 (010) films epitaxially grown on SrTiO 3 (001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Yingge; Li, Guoqiang; Peterson, Erik W.

The ability to synthesis well-ordered two-dimensional materials under ultra-high vacuum and directly characterize them by other techniques in-situ can greatly advance our current understanding on their physical and chemical properties. In this paper, we demonstrate that iso-oriented α-MoO3 films with as low as single monolayer thickness can be reproducibly grown on SrTiO3(001) substrates by molecular beam epitaxy ( (010)MoO3 || (001)STO, [100]MoO3 || [100]STO or [010]STO) through a self-limiting process. While one in-plane lattice parameter of the MoO3 is very close to that of the SrTiO3 (aMoO3 = 3.96 Å, aSTO = 3.905 Å), the lattice mismatch along other directionmore » is large (~5%, cMoO3 = 3.70 Å), which leads to relaxation as clearly observed from the splitting of streaks in reflection high-energy electron diffraction (RHEED) patterns. A narrow range in the growth temperature is found to be optimal for the growth of monolayer α-MoO3 films. Increasing deposition time will not lead to further increase in thickness, which is explained by a balance between deposition and thermal desorption due to the weak van der Waals force between α-MoO3 layers. Lowering growth temperature after the initial iso-oriented α-MoO3 monolayer leads to thicker α-MoO3(010) films with excellent crystallinity.« less

The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Brooks, Charles M.

Included in this work is a range of studies on films of homoeptaxial and heteroepitaxial films of SrTiO3 and the first reported phase-pure films of LuFe2O4. We report the structural properties of homoepitaxial (100) SrTiO3 films grown by reactive molecular-beam epitaxy (MBE). The lattice spacing and x-ray diffraction (XRD) rocking curves of stoichiometric MBEgrown SrTiO3 films are indistinguishable from the underlying SrTiO3 substrates. The effect of off-stoichiometry for both strontium-rich and strontium-poor compositions results in lattice expansion with significant changes to the shuttered reflection high-energy electron diffraction oscillations, XRD, film microstructure, and thermal conductivity. Up to an 80% reduction in Sr(1+x)TiO3 film thermal conductivity is measured for x = -0.1 to 0.5. Significant reduction, from 11.5 to ˜2 W˙m-1K-1, occurs through the formation of Ruddlesden-Popper planar faults. The ability to deposit films with a reduction in thermal conductivity is applicable to thermal barrier coatings and thermoelectrics. Scanning transmission electron microscopy is used to examine the formation of Ruddlesden-Popper planar faults in films with strontium excess. We also show that the band gap of SrTiO3 can be altered by >10% (0.3 eV) by using experimentally realizable biaxial strains providing a new means to accomplish band gap engineering of SrTiO3 and related perovskites. Such band gap manipulation is relevant to applications in solar cells water splitting, transparent conducting oxides, superconductivity, two-dimensional electron liquids, and other emerging oxide electronics. This work also presents the adsorption-controlled growth of single-phase (0001)-oriented epitaxial films of charge ordered multiferroic, LuFe2O4, on (111) MgAl2O4, (111) MgO, and (0001) 6H-SiC substrates in an iron-rich environment at pressures and temperatures where excess iron desorbs from the film surface during growth. Scanning transmission electron microscopy reveals reaction-free film-substrate interfaces. The magnetization increases rapidly below 240 K, consistent with the paramagnetic-to-ferrimagnetic phase transition of bulk LuFe2O4.

Atomic structure of (111) SrTiO3/Pt interfaces

NASA Astrophysics Data System (ADS)

Schmidt, Steffen; Klenov, Dmitri O.; Keane, Sean P.; Lu, Jiwei; Mates, Thomas E.; Stemmer, Susanne

2006-03-01

Atomic resolution high-angle annular dark field (HAADF) imaging in scanning transmission electron microscopy was used to investigate the interface atomic structure of epitaxial, (111) oriented SrTiO3 films on epitaxial Pt electrodes grown on (0001) sapphire. The cube-on-cube orientation relationship of SrTiO3 on Pt was promoted by the use of a Ti adhesion layer underneath the Pt electrode. While a Ti-rich Pt surface was observed before SrTiO3 growth, HAADF images showed an atomically abrupt SrTiO3/Pt interface with no interfacial layers. The SrTiO3 films contained two twin variants that were related by a 180° rotation about the ⟨111⟩ surface normal. HAADF images showed two different interface atomic arrangements for the two twins. The role of Ti in promoting (111) epitaxy and the implications for the dielectric properties are discussed.

Orientation-adjusted anomalous insulator-metal transition in NdNiO3/LaMnO3 bilayers

NASA Astrophysics Data System (ADS)

Pan, S. Y.; Shi, L.; Zhao, J. Y.; Zhou, S. M.; Xu, X. M.

2018-04-01

NdNiO3/LaMnO3 (NNO/LMO) bilayers were epitaxially grown on SrTiO3 (STO) substrates with different orientations by the polymer-assisted deposition technique. A well crystallization quality of the bilayers is confirmed by X-ray diffraction. Two consecutive transitions, an anomalous insulator-metal transition at ˜100 K followed by the typical metal-insulator transition at ˜171 K, are observed in the (001)-oriented NNO/LMO/STO bilayer. The anomalous insulator-metal transition temperature increases to 142 K for the (111)-oriented NNO/LMO/STO bilayer. Meanwhile, the magnetic properties of the NNO/LMO bilayers show an obvious difference with [100] and [111] orientations. Considering the different strain directions and the related oxygen octahedral distortion/rotation, it is suggested that the magnetic changes and the low-temperature anomalous insulator-metal transition in the NNO/LMO bilayers are attributed to the strong interlayer exchange coupling and charge transfer adjusted by the substrate orientation, which can be an effective technique to tune the properties of transition-metal oxide films.

Sputter Deposition of Yttrium-Barium Superconductor and Strontium Titanium Oxide Barrier Layer Thin Films

NASA Astrophysics Data System (ADS)

Truman, James Kelly

1992-01-01

The commercial application of superconducting rm YBa_2Cu_3O_{7 -x} thin films requires the development of deposition methods which can be used to reproducibly deposit films with good superconducting properties on insulating and semiconducting substrates. Sputter deposition is the most popular method to fabricate Y-Ba-Cu-O superconductor thin films, but when used in the standard configuration suffers from a deviation between the compositions of the Y-Ba-Cu-O sputter target and deposited films, which is thought to be primarily due to resputtering of the film by negative ions sputtered from the target. In this study, the negative ions were explicitly identified and were found to consist predominantly O^-. The sputter yield of O^- was found to depend on the Ba compound used in the fabrication of Y -Ba-Cu-O targets and was related to the electronegativity difference between the components. An unreacted mixture of rm Y_2O_3, CuO, and BaF_2 was found to have the lowest O^- yield among targets with Y:Ba:Cu = 1:2:3. The high yield of O^- from rm YBa_2Cu_3O _{7-x} was found to depend on the target temperature and be due to the excess oxygen present. The SIMS negative ion data supported the composition data for sputter-deposited Y-Ba-Cu-O films. Targets using BaF _2 were found to improve the Ba deficiency, the run-to-run irreproducibility and the nonuniformity of the film composition typically found in sputtered Y -Ba-Cu-O films. Superconducting Y-Ba-Cu-O films were formed on SrTiO_3 substrates by post-deposition heat treatment of Y-Ba-Cu-O-F films in humid oxygen. The growth of superconducting rm YBa_2Cu_3O_{7-x}, thin films on common substrates such as sapphire or silicon requires the use of a barrier layer to prevent the deleterious interaction which occurs between Y-Ba-Cu-O films and these substrates. Barrier layers of SrTiO_3 were studied and found to exhibit textured growth with a preferred (111) orientation on (100) Si substrates. However, SrTiO_3 was found to be unsuitable as a barrier layer for the growth of rm YBa _2Cu_3O_{7-x}, on Si since Ba reacted with the si after migrating through the SrTiO_3 layer. For sapphire, no textured growth of SrTiO_3 was observed but it was found to be a suitable barrier layer since it prevented any interaction between Y-Ba-Cu-O films and sapphire substrates.

Magnetic domain configuration of (111)-oriented LaFeO 3 epitaxial thin films

DOE PAGES

Hallsteinsen, I.; Moreau, M.; Chopdekar, R. V.; ...

2017-08-22

In antiferromagnetic spintronics control of the domains and corresponding spin axis orientation is crucial for devices. Here we investigate the antiferromagnetic axis in (111)-oriented LaFeO 3 SrTiO 3 , which is coupled to structural twin domains. The structural domains have either the orthorhombic a- or b-axis along the in-plane <1more » $$\\bar{1}$$0> cubic directions of the substrate, and the corresponding magnetic domains have the antiferromagnetic axis in the sample plane. Six degenerate antiferromagnetic axes are found corresponding to the <1$$\\bar{1}$$0> and <11$$\\bar{2}$$> in-plane directions. This is in contrast to the biaxial anisotropy in (001)-oriented films and reflects how crystal orientation can be used to control magnetic anisotropy in antiferromagnets.« less

Well-ordered large-area arrays of epitaxial ferroelectric (Bi,La)4Ti3O12 nanostructures fabricated by gold nanotube-membrane lithography

NASA Astrophysics Data System (ADS)

Lee, Sung Kyun; Lee, Woo; Alexe, Marin; Nielsch, Kornelius; Hesse, Dietrich; Gösele, Ulrich

2005-04-01

Two-dimensionally well-ordered, large-area arrays of epitaxial, ferroelectric, La-substituted Bi4Ti3O12 (BLT) nanostructures are prepared using gold nanotube membranes as a liftoff mask. Epitaxial nanostructures with a height of about 65nm and a lateral size of about 150nm, with either (001) ("c-axis") orientation, or mixed (118)/(100) ("non-c-axis") orientation, are obtained on (001)- and (011)-oriented SrTiO3 substrates, respectively. The ferroelectric properties are probed by piezoresponse scanning force microscopy. Non-c-axis-oriented BLT nanostructures show an effective piezoresponse coefficient (2dzz) of about 38.0pm /V, whereas c-axis-oriented structures show one of only about 4.9pm/V.

Thickness dependence of structural and piezoelectric properties of epitaxial Pb(Zr0.52Ti0.48)O3 films on Si and SrTiO3 substrates

NASA Astrophysics Data System (ADS)

Kim, D. M.; Eom, C. B.; Nagarajan, V.; Ouyang, J.; Ramesh, R.; Vaithyanathan, V.; Schlom, D. G.

2006-04-01

We report the structural and longitudinal piezoelectric responses (d33) of epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) films on (001) SrTiO3 and Si substrates in the thickness range of 40nm -4μm. With increasing film thickness the tetragonality of PZT was reduced. The increase in d33 value with increasing film thicknesses was attributed to the reduction of substrate constraints and softening of PZT due to reduced tetragonality. The d33 values of PZT films on Si substrates (˜330pm/V) are higher than those on SrTiO3 substrates (˜200pm /V). The epitaxial PZT films on silicon will lead to the fabrication of high performance piezoelectric microelectromechanical devices.

Epitaxial structure and transport in LaTiO3+x films on (001) SrTiO3

NASA Astrophysics Data System (ADS)

Kim, K. H.; Norton, D. P.; Budai, J. D.; Chisholm, M. F.; Sales, B. C.; Christen, D. K.; Cantoni, C.

2003-12-01

The structure and transport properties of LaTiO3+x epitaxial thin films grown on (001) SrTiO3 by pulsed-laser deposition is examined. Four-circle X-ray diffraction indicates that the films possess the defect perovskite LaTiO3 structure when deposited in vacuum, with the higher X compounds forming at moderate oxygen pressures. The crystal structure of the LaTiO3 films is tetragonal in the epitaxial films, in contrast to the orthorhombic structure observed in bulk materials. A domain structure is observed in the films, consisting of LaTiO3 oriented either with the [110] or [001] directions perpendicular to the substrate surface. Z-contrast scanning transmission electron microscopy reveals that this domain structure is not present in the first few unit cells of the film, but emerges approximately 2-3 nm from the SrTiO3/LaTiO3 interface. Upon increasing the oxygen pressure during growth, a shift in the lattice d-spacing parallel to the substrate surface is observed, and is consistent with the growth of the La2Ti2O7 phase. However, van der Pauw measurements show that the films with the larger d-spacing remain conductive, albeit with a resistivity that is significantly higher than that for the perovskite LaTiO3 films. The transport behavior suggests that the films grown at higher oxygen pressures are LaTiO3+x with 0.4 < x < 0.5. (

Top-seeded solution growth of SrTiO3 single crystals virtually free of mosaicity

NASA Astrophysics Data System (ADS)

Guguschev, Christo; Kok, Dirk J.; Juda, Uta; Uecker, Reinhard; Sintonen, Sakari; Galazka, Zbigniew; Bickermann, Matthias

2017-06-01

Strontium titanate (SrTiO3), a well-established traditional perovskite substrate as well as a promising substrate crystal for the epitaxy of new advanced perovskite-type thin films, suffers from the unavailability in adequate quality for the latter. To improve the situation attempts have been made to grow SrTiO3 at moderate temperatures (<1535 °C) well below the melting temperature and under low temperature gradients by the top-seeded solution growth method. Based on very special modifications of the growth conditions, virtually mosaicity-free SrTiO3 single crystals in the 1-2 cm range were obtained. High crystalline quality was verified by defect selective etching, rocking curve measurements, energy dispersive Laue mappings and by synchrotron X-Ray diffraction topography. The production of virtually subgrain- and dislocation free substrate crystals is essential to considerably improve characteristics of SrTiO3 based SQUIDs, transistors or memory devices and to allow an in-depth analysis of intrinsic and extrinsic factors influencing the properties of epitaxially grown oxide heterostructures.

Substrate-dependent structural and CO sensing properties of LaCoO3 epitaxial films

NASA Astrophysics Data System (ADS)

Liu, Haifeng; Sun, Hongjuan; Xie, Ruishi; Zhang, Xingquan; Zheng, Kui; Peng, Tongjiang; Wu, Xiaoyu; Zhang, Yanping

2018-06-01

LaCoO3 thin films were grown on different (0 0 1) oriented LaAlO3, SrTiO3 and (LaAlO3)0.3(Sr2AlTaO6)0.7 by the polymer assisted deposition method, respectively. All the LaCoO3 thin films are in epitaxial growth on these substrates, with tetragonal distortion of CoO6 octahedrons. Due to different in-plane lattice mismatch, the LaCoO3 film on LaAlO3 has the largest tetragonal distortion of CoO6 octahedrons while the film grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 has the smallest tetragonal distortion. The relative contents of the surface absorbed oxygen species are found to increase for the LaCoO3 epitaxial films grown on (0 0 1) oriented (LaAlO3)0.3(Sr2AlTaO6)0.7, SrTiO3 and LaAlO3 substrates, sequentially. The film sensors exhibit good CO sensing properties at 150 °C, and the LaCoO3 film on LaAlO3 shows the highest response but the film on (LaAlO3)0.3(Sr2AlTaO6)0.7 shows the lowest. It reveals that the larger degree of Jahn-Teller-like tetragonal distortion of CoO6 octahedrons may greatly improve the surface absorbing and catalytic abilities, corresponding to more excellent CO sensing performance. The present study suggests that the formation of epitaxial films is an efficient methodology for controlling the octahedral distortion and thereby improving the gas sensing performance of perovskite transition metal oxides.

Composition dependences of crystal structure and electrical properties of epitaxial Pb(Zr,Ti)O3 films grown on Si and SrTiO3 substrates

NASA Astrophysics Data System (ADS)

Okamoto, Shoji; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

2016-10-01

{100}-oriented Pb(Zr x ,Ti1- x )O3 (PZT) thin films of approximately 2 µm thickness and Zr/(Zr + Ti) ratios of 0.39-0.65 were epitaxially grown on (100)cSrRuO3//(100)SrTiO3 (STO) and (100)cSrRuO3//(100)cLaNiO3//(100)CeO2//(100)YSZ//(100)Si (Si) substrates having different thermal expansion coefficients by pulsed metal-organic chemical vapor deposition (MOCVD). The effects of Zr/(Zr + Ti) ratio and type of substrate on the crystal structure and dielectric, ferroelectric and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that both films changed from having a tetragonal symmetry to rhombohedral symmetry through the coexisting region with increasing Zr/(Zr + Ti) ratio. This region showed the Zr/(Zr + Ti) ratios of 0.45-0.59 for the films on the STO substrates that were wider than the films on the Si substrates. Saturation polarization values were minimum at approximately Zr/(Zr + Ti) = 0.50 for the films on the STO substrates, and no obvious Zr/(Zr + Ti) ratio dependence was detected in the films on the Si substrates. On the other hand, the maximum field-induced strain values measured by scanning force microscopy at approximately Zr/(Zr + Ti) = 0.50 at 100 kV/cm were about 0.5 and 0.1% in the films on the Si and STO, respectively.

Controlling BaZrO3 nanostructure orientation in YBa2Cu3O{}_{7-\\delta } films for a three-dimensional pinning landscape

NASA Astrophysics Data System (ADS)

Wu, J. Z.; Shi, J. J.; Baca, F. J.; Emergo, R.; Wilt, J.; Haugan, T. J.

2015-12-01

The orientation phase diagram of self-assembled BaZrO3 (BZO) nanostructures in c-oriented YBa2Cu3O{}7-δ (YBCO) films on flat and vicinal SrTiO3 substrates was studied experimentally with different dopant concentrations and vicinal angles and theoretically using a micromechanical model based on the theory of elasticity. The organized BZO nanostructure configuration was found to be tunable, between c-axis to ab-plane alignment, by the dopant concentration in the YBCO film matrix strained via lattice mismatched substrates. The correlation between the local strain caused by the BZO doping and the global strain on the matrix provides a unique approach for controllable growth of dopant nanostructure landscapes. In particular, a mixed phase of the c-axis-aligned nanorods and the ab-plane-aligned planar nanostructures can be obtained, leading to a three-dimensional pinning landscape with single impurity doping and much improved J c in almost all directions of applied magnetic field.

Optimized dielectric properties of SrTiO3:Nb /SrTiO3 (001) films for high field effect charge densities

NASA Astrophysics Data System (ADS)

Cai, Xiuyu; Frisbie, C. Daniel; Leighton, C.

2006-12-01

The authors report the growth, structural and electrical characterizations of SrTiO3 films deposited on conductive SrTiO3:Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ˜200 (for a thickness of 1150Å). The breakdown fields in SrTiO3:Nb /SrTiO3/Ag capacitors are consistent with induced charge densities >1×1014cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.

Construction and performance of a high-temperature-superconductor composite bolometer

NASA Technical Reports Server (NTRS)

Brasunas, J. C.; Moseley, S. H.; Lakew, B.; Ono, R. H.; Mcdonald, D. G.

1989-01-01

A high-Tc superconducting bolometer has been constructed using a YBa2Cu3O(x) thin-film meander line 20 microns wide and 76,000 microns long, deposited on a SrTiO3 substrate. Radiation is absorbed by a thin film of Bi with well-characterized absorption properties deposited on a Si substrate in contact with the SrTiO3. At 1.8 Hz the measured bolometer response to a 500-K blackbody is 5.2 V/W (820 V/W extrapolated to dc). The impact of apparent nonohmic behavior at the transition is discussed, as are ways of reducing the observed 1/f noise. The response time is 32 s and is dominated by the heat capacity of the SrTiO3 substrate.

Modulation of ferroelectricity and resistance switching in SrTiO3 films

NASA Astrophysics Data System (ADS)

Yang, Fang; Wang, Weihua; Guo, Jiandong

SrTiO3 has remarkable dielectric property; it also exhibits ferroelectricity in thin films with strain or defects. It is expected that modulation of its ferroelectricity and electricity is potential in oxide electronics. The nonstoichiometry SrTiO3 thin films with different cation concentrations were prepared on Si (001) substrates. Piezoresponse force microscopy measurements show that those films with Sr deficiency display obvious ferroelectricity. The scanning transmission electron microscopy results show that there are interstitial Ti atoms in the unit cells. Polar defect pairs can be formed by the interstitial Ti atoms and Sr vacancies along [100] or [110] direction. Such antisitelike defects observed in SrTiO3 films are considered as the origin of the ferroelectricity. In this way, the SrTiO3 ferroelectricity can be modulated by control the concentration of the antisitelike defects via changing the cation concentration. Further, [(SrTiO3)3 /(LaTiO3)2 ]3 superlattices have been prepared on 0.67[Pb(Mg1/3Nb2/3) O3]-0.33[PbTiO3] (PMN-PT) substrate. The superlattices show resistance switching under the ferroelectric polarization of the PMN-PT substrate. The on/off ratio of the interfacial resistance is about 20% 25%. This can be applied in oxide electronics in potential. This work is supported by Chinese MOST (Grant No. 2014CB921001), Chinese NSFC (Grant No. 11404381 & Grant No. 11225422) and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB07030100).

Influence of anisotropic strain on the dielectric and ferroelectric properties of SrTiO3 thin films on DyScO3 substrates

NASA Astrophysics Data System (ADS)

Biegalski, M. D.; Vlahos, E.; Sheng, G.; Li, Y. L.; Bernhagen, M.; Reiche, P.; Uecker, R.; Streiffer, S. K.; Chen, L. Q.; Gopalan, V.; Schlom, D. G.; Trolier-McKinstry, S.

2009-06-01

The in-plane dielectric and ferroelectric properties of coherent anisotropically strained SrTiO3 thin films grown on orthorhombic (101) DyScO3 substrates were examined as a function of the angle between the applied electric field and the principal directions of the substrate. The dielectric permittivity revealed two distinct maxima as a function of temperature along the [100]p and [010]p SrTiO3 pseudocubic directions. These data, in conjunction with optical second-harmonic generation, show that the switchable ferroelectric polarization develops first predominantly along the in-plane axis with the larger tensile strain before developing a polarization component along the perpendicular direction with smaller strain as well, leading to domain twinning at the lower temperature. Finally, weak signatures in the dielectric and second-harmonic generation response were detected at the SrTiO3 tilt transition close to 165 K. These studies indicate that anisotropic biaxial strain can lead to new ferroelectric domain reorientation transitions that are not observed in isotropically strained films.

In situ X-ray diffraction and the evolution of polarization during the growth of ferroelectric superlattices

DOE PAGES

Bein, Benjamin; Hsing, Hsiang-Chun; Callori, Sara J.; ...

2015-12-04

In the epitaxially strained ferroelectric thin films and superlattices, the ferroelectric transition temperature can lie above the growth temperature. Ferroelectric polarization and domains should then evolve during the growth of a sample, and electrostatic boundary conditions may play an important role. In this work, ferroelectric domains, surface termination, average lattice parameter and bilayer thickness are simultaneously monitored using in situ synchrotron X-ray diffraction during the growth of BaTiO 3/SrTiO 3 superlattices on SrTiO 3 substrates by off-axis radio frequency magnetron sputtering. The technique used allows for scan times substantially faster than the growth of a single layer of material. Effectsmore » of electric boundary conditions are investigated by growing the same superlattice alternatively on SrTiO 3 substrates and 20 nm SrRuO 3 thin films on SrTiO 3 substrates. Our experiments provide important insights into the formation and evolution of ferroelectric domains when the sample is ferroelectric during the growth process.« less

Striped lanthanum cobaltite films: how strain orders oxygen defects

NASA Astrophysics Data System (ADS)

Birenbaum, Axiel Yael; Biegalski, Michael D.; Qiao, Liang; Cooper, Valentino R.; Borisevich, Albina

Oxygen-deficient metal cobalt oxides have been widely studied for solid oxide fuel cell cathode applications. In order to predict atomic-scale transport pathways, a thorough understanding of its defect properties is crucial. Previous studies, including Scanning Transmission Electron Microscopy (STEM), demonstrate lanthanum cobaltite, grown as thin films on [100]pc oriented perovskites, spontaneously order its oxygen vacancies. In this work, we investigate the behavior of LaCoO3 - δ thin films grown on SrTiO3 [111] surface to determine if orientation can be used to shape the anisotropy of oxygen transport. For these films, STEM studies reveal ordered vacancy arrangements. We do so by establishing the structural and electronic properties of LaCoO3 - δ on SrTiO3, using ab initio electronic structure calculations. We then treat how epitaxial strain leads to oxygen vacancies forming these distinctive stripe patterns. The impact of different substrates is addressed. In addition, this leads to an opportunity to discuss the effect of reduced symmetry in oxygen deficient compounds on cobalt oxide behavior compared to the ideal perovskite environment. Research was sponsored by the US DoE, Office of Science, BES, MSED, and used resources at NERSC and OLCF.

Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Choi, Miri; Posadas, Agham; Dargis, Rytis; Shih, Chih-Kang; Demkov, Alexander A.; Triyoso, Dina H.; David Theodore, N.; Dubourdieu, Catherine; Bruley, John; Jordan-Sweet, Jean

2012-03-01

An epitaxial layer of SrTiO3 grown directly on Si may be used as a pseudo-substrate for the integration of perovskite oxides onto silicon. When SrTiO3 is initially grown on Si (001), it is nominally compressively strained. However, by subsequent annealing in oxygen at elevated temperature, an SiOx interlayer can be formed which alters the strain state of SrTiO3. We report a study of strain relaxation in SrTiO3 films grown on Si by molecular beam epitaxy as a function of annealing time and oxygen partial pressure. Using a combination of x-ray diffraction, reflection high energy electron diffraction, and transmission electron microscopy, we describe the process of interfacial oxidation and strain relaxation of SrTiO3 on Si (001). Understanding the process of strain relaxation of SrTiO3 on silicon will be useful for controlling the SrTiO3 lattice constant for lattice matching with functional oxide overlayers.

Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate

NASA Astrophysics Data System (ADS)

Bai, Gang; Xie, Qiyun; Liu, Zhiguo; Wu, Dongmei

2015-08-01

A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO3 films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO3 films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO3 films similar to PZT and other lead-based ferroelectrics can be expected.

Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

NASA Astrophysics Data System (ADS)

Takayanagi, Makoto; Tsuchiya, Takashi; Namiki, Wataru; Ueda, Shigenori; Minohara, Makoto; Horiba, Koji; Kumigashira, Hiroshi; Terabe, Kazuya; Higuchi, Tohru

2018-03-01

Epitaxial Ca1-xSrxVO3 (0 ≦ x ≦ 1) thin films were grown on (100)-oriented SrTiO3 substrates by using the pulsed laser deposition technique. In contrast to the previous report that metal-insulator transition (MIT) in Ca1-xSrxVO3 (CSVO) was achieved only for extremely thin films (several nm thick), MIT was observed at 39, 72, and 113 K for films with a thickness of 50 nm. The electronic structure was investigated by hard and soft X-ray photoemission spectroscopy (HX-PES and SX-PES). The difference between these PES results was significant due to the variation in an escape depth of photoelectrons of PES. While HX-PES showed that the V 2p3/2 spectra consisted of four peaks (V5+, V4+, V3+, and V2+/1+), SX-PES showed only three peaks (V5+, V4+, and V3+). This difference can be caused by a strain from the substrate, which leads to the chemical disorder (V5+, V4+, V3+, and V2+/1+). The thin film near the substrate is affected by the strain. The positive magnetoresistance is attributed to the effect of electron-electron interactions in the disorder system. Therefore, the emergence of MIT can be explained by the electron-electron interactions from the chemical disorder due to the strain.

Crystallographic orientation of epitaxial BaTiO3 films: The role of thermal-expansion mismatch with the substrate

NASA Astrophysics Data System (ADS)

Srikant, V.; Tarsa, E. J.; Clarke, D. R.; Speck, J. S.

1995-02-01

Expitaxial ferroelectric BaTiO3 thin films have been grown on (001) MgO and MgO-buffered (001) GaAs substrates by pulsed laser deposition to explore the effect of substrate lattice parameter. X-ray-diffraction studies showed that the BaTiO3 films on both MgO single-crystal substrates and MgO-buffered (001) GaAs substrates have a cube-on-cube epitaxy; however, for the BaTiO3 films grown on MgO the spacing of the planes parallel to the substrate was close to the c-axis dimension of the unconstrained tetragonal phase, whereas the BaTiO3 films on MgO/GaAs exhibited a spacing closer to the a-axis dimension of the unconstrained tetragonal phase. The cube-on-cube epitaxy was maintained through the heterostructures even when thin epitaxial intermediate buffer layers of SrTiO3 and La(0.5)Sr(0.5)CoO3 were used. The intermediate layers had no effect on the position of the BaTiO3 peak in theta - 2 theta scans. Together, these observations indicate that, for the materials combinations studied, it is the thermal-expansion mismatch between the film and the underlying substrate that determines the crystallographic orientation of the BaTiO3 film. Preliminary measurements indicate that the BaTiO3 films are 'weakly' ferroelectric.

Chemical strain-dependent two-dimensional transport at R AlO 3 / SrTiO 3 interfaces ( R = La , Nd , Sm , and Gd )

DOE PAGES

Li, Chen; Shen, Xuan; Yang, Yurong; ...

2016-12-27

Perovskite RAlO 3 (R = La, Nd, Sm, and Gd) films have been deposited epitaxially on (001) TiO 2-terminated SrTiO 3 substrates. In this paper, it is observed that the two-dimensional transport characteristics at the RAlO 3/SrTiO 3 interfaces are very sensitive to the species of rare-earth element, that is to chemical strain. Although electron energy loss spectroscopy measurements show that electron transfer occurs in all the four polar/nonpolar heterostructures, the amount of electrons transferred across SmAlO 3/SrTiO 3 and GdAlO 3/SrTiO 3 interfaces are much less than those across LaAlO 3/SrTiO 3 and NdAlO 3/SrTiO 3 interfaces. First-principles calculationsmore » reveal the competition between ionic polarization and electronic polarization in the polar layers in compensating the build-in polarization due to the polar discontinuity at the interface. Finally, in particular, a large ionic polarization is found in SmAlO 3/SrTiO 3 and GdAlO 3/SrTiO 3 systems (which experience the largest tensile epitaxial strain), hence reducing the amount of electrons transferred.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Chen; Shen, Xuan; Yang, Yurong

Perovskite RAlO 3 (R = La, Nd, Sm, and Gd) films have been deposited epitaxially on (001) TiO 2-terminated SrTiO 3 substrates. In this paper, it is observed that the two-dimensional transport characteristics at the RAlO 3/SrTiO 3 interfaces are very sensitive to the species of rare-earth element, that is to chemical strain. Although electron energy loss spectroscopy measurements show that electron transfer occurs in all the four polar/nonpolar heterostructures, the amount of electrons transferred across SmAlO 3/SrTiO 3 and GdAlO 3/SrTiO 3 interfaces are much less than those across LaAlO 3/SrTiO 3 and NdAlO 3/SrTiO 3 interfaces. First-principles calculationsmore » reveal the competition between ionic polarization and electronic polarization in the polar layers in compensating the build-in polarization due to the polar discontinuity at the interface. Finally, in particular, a large ionic polarization is found in SmAlO 3/SrTiO 3 and GdAlO 3/SrTiO 3 systems (which experience the largest tensile epitaxial strain), hence reducing the amount of electrons transferred.« less

Impact of cleaning methods on the structural properties and morphology of SrTiO3 surface

NASA Astrophysics Data System (ADS)

Arnay, Iciar; Rubio-Zuazo, Juan; Castro, German R.

2018-01-01

SrTiO3 is a widely used substrate for the epitaxial growth of complex systems. Nevertheless, in order to get good quality interface and avoid the formation of defects in the adsorbed layer it is essential to prepare the surface of the substrate prior to the deposition. Thermal and chemical treatments are mostly used to eliminate superficial contamination and improve the surface quality. However, there is a lack of information regarding the impact of these treatments on the formation of structural defects at the SrTiO3 surface. In this work we present a detailed characterization of the SrTiO3 surface for the different cleaning methods paying special attention to the formation of oxygen vacancies, large surface mosaicity and roughness. We prove that thermal treatment induces large surface roughness and that chemical etching produces important structural defects at the surface. Our results show that mechanical polishing provided the best compromise in terms of large surface domains, low roughness, absence of oxygen vacancies and absence of atomic structure modification, although with the presence of low level of contaminants at the SrTiO3 surface.

Structural characterization of niobium oxide thin films grown on SrTiO3 (111) and (La,Sr)(Al,Ta)O3 (111) substrates

NASA Astrophysics Data System (ADS)

Dhamdhere, Ajit R.; Hadamek, Tobias; Posadas, Agham B.; Demkov, Alexander A.; Smith, David J.

2016-12-01

Niobium oxide thin films have been grown by molecular beam epitaxy on SrTiO3 (STO) (111) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT) (111) substrates. Transmission electron microscopy (TEM) confirmed the formation of high quality films with coherent interfaces. Films grown with higher oxygen pressure on STO (111) resulted in a (110)-oriented NbO2 phase with a distorted rutile structure, which can be described as body-centered tetragonal. The a lattice parameter of NbO2 was determined to be ˜13.8 Å in good agreement with neutron diffraction results published in the literature. Films grown on LSAT (111) at lower oxygen pressure produced the NbO phase with a defective rock salt cubic structure. The NbO lattice parameter was determined to be a ≈ 4.26 Å. The film phase/structure identification from TEM was in good agreement with in situ x-ray photoelectron spectroscopy measurements that confirmed the dioxide and monoxide phases, respectively. The atomic structure of the NbO2/STO and NbO/LSAT interfaces was determined based on comparisons between high-resolution electron micrographs and image simulations.

La-doped SrTiO3 films with large cryogenic thermoelectric power factors

NASA Astrophysics Data System (ADS)

Cain, Tyler A.; Kajdos, Adam P.; Stemmer, Susanne

2013-05-01

The thermoelectric properties at temperatures between 10 K and 300 K of La-doped SrTiO3 thin films grown by hybrid molecular beam epitaxy (MBE) on undoped SrTiO3 substrates are reported. Below 50 K, the Seebeck coefficients exhibit very large magnitudes due to the influence of phonon drag. Combined with high carrier mobilities, exceeding 50 000 cm2 V-1 s-1 at 2 K for the films with the lowest carrier densities, this leads to thermoelectric power factors as high as 470 μWcm-1 K-2. The results are compared with other promising low temperature thermoelectric materials and discussed in the context of coupling with phonons in the undoped substrate.

Evidence for filamentary superconductivity up to 220 K in oriented multiphase Y-Ba-Cu-O thin films

NASA Astrophysics Data System (ADS)

Schönberger, R.; Otto, H. H.; Brunner, B.; Renk, K. F.

1991-02-01

We report on the observation of filamentary superconductivity up to 220 K in multiphase Y-Ba-Cu-O materials that are deposited as highly oriented thin films on (110)-SrTiO 3 substrates by laser ablation from ceramic targets. The high temperature zero resistivity states are reproducible after temperature cycling down to 80 K for samples treated by a special oxygenation and ozonization process at 340 K and measured in a pure oxygen atmosphere. Our results on thin films confirm former experiments of J.T. Chen and co-workers obtained on ceramic samples with preferred crystallite orientation. A close connection between superconductivity and structural instabilities of most likely ferroic nature, which are observed more often for YBa 2Cu 3O 7 in a narrow temperature range near 220 K, is suggested.

Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water

PubMed Central

Connell, J. G.; Nichols, J.; Gruenewald, J. H.; Kim, D.-W.; Seo, S. S. A.

2016-01-01

We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns. PMID:27033248

Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaspar, Tiffany C.; Hong, Seungbum; Bowden, Mark E.

2018-02-14

Current piezoelectric sensors and actuators are limited to operating temperatures less than ~200°C due to the low Curie temperature of the piezoelectric material. High temperature piezoelectric materials such as La2Ti2O7 (LTO) would facilitate the development of high-temperature sensors if the piezoelectric coupling coefficient could be maximized. We have deposited epitaxial LTO films on SrTiO3(001), SrTiO3(110), and rutile TiO2(110) substrates by pulsed laser deposition, and show that the crystalline orientation of the LTO film, and thus its piezoelectric coupling direction, can be controlled by epitaxial matching to the substrate. The structure and phase purity of the films were investigated by x-raymore » diffraction and scanning transmission electron microscopy. To characterize the piezoelectric properties, piezoresponse force microscopy was used to measure the in-plane and out-of-plane piezoelectric coupling in the films. We find that the strength of the out-of-plane piezoelectric coupling can be increased when the piezoelectric crystalline direction is rotated partially out-of-plane via epitaxy. The strongest out-of-plane coupling is observed for LTO/STO(001). Deposition on TiO2(110) results in epitaxial La2/3TiO3, an orthorhombic perovskite of interest as a microwave dielectric material. La2/3TiO3 can be difficult to stabilize in bulk form, and epitaxial deposition has not been previously reported. These results confirm that control of the crystalline orientation of LTO-based materials can increase the out-of-plane strength of its piezoelectric coupling, which can be exploited in piezoelectric devices.« less

Scavenging of oxygen from SrTiO3 by metals and its implications for oxide thin film deposition

NASA Astrophysics Data System (ADS)

Posadas, Agham; Kormondy, Kristy; Guo, Wei; Ponath, Patrick; Kremer, Jacqueline; Hadamek, Tobias; Demkov, Alexander

SrTiO3 is a widely used substrate for the growth of other functional oxide thin films. However, SrTiO3 loses oxygen very easily during oxide thin film deposition even under relatively high oxygen pressures. In some cases, there will be an interfacial layer of oxygen-deficient SrTiO3 formed at the interface with the deposited oxide film, depending on the metals present in the film. By depositing a variety of metals layer by layer and measuring the evolution of the core level spectra of both the deposited metal and SrTiO3 using x-ray photoelectron spectroscopy, we show that there are three distinct types of behavior that occur for thin metal films on SrTiO3. We discuss the implications of these types of behavior for the growth of complex oxide thin films on SrTiO3, and which oxide thin films are expected to produce an interfacial oxygen-deficient layer depending on their elemental constituents.

Research in High Dielectric Properties of Ferroelectric Materials

DTIC Science & Technology

1992-01-01

compositions) on perovskite SrTiO 3 substrates. However, only a small range of perovskite materials can be grown using SrTiO 3 because of its small unit cell (a...because of the excellent homogeneity and small particle size of sol-gel films, the spontaneous polarization of PZT films grown by this technique has...9-11]. are polycrystalline due to the poor lattice match with The deposition of PZT and PLZT films by the the substrates. A small split of the (200

Enhanced photoelectrical performance of dye-sensitized solar cells with double-layer TiO2 on perovskite SrTiO3 substrate

NASA Astrophysics Data System (ADS)

Liu, Qiuhong; Sun, Qiong; Zhang, Min; Li, Yang; Zhao, Mei; Dong, Lifeng

2016-04-01

In this research, perovskite SrTiO3 particles are synthesized by a hydrothermal method, and TiO2 with a double-layer structure is grown on the SrTiO3 surface by a hydrolysis-condensation process. Structural characterizations reveal that TiO2 comprises of two phases: anatase film at the bottom and single-crystal rutile nanorods grown along the [110] direction on top. The TiO2-SrTiO3 composite film is investigated as photoanode material for dye-sensitized solar cells. In comparison with pure TiO2 and SrTiO3, the composite photoanode shows a much better performance in photoelectric conversion efficiency (1.35 %), which is about 2 and 100 times as efficient as pure TiO2 and SrTiO3, respectively. This indicates that the composite structure can facilitate charge carrier transfer and reduce electron-hole recombination to enhance photoelectrical properties of TiO2-based photoanode materials.

Ion blocking dip shape analysis around a LaAlO3/SrTiO3 interface

NASA Astrophysics Data System (ADS)

Jalabert, D.; Zaid, H.; Berger, M. H.; Fongkaew, I.; Lambrecht, W. R. L.; Sehirlioglu, A.

2018-05-01

We present an analysis of the widths of the blocking dips obtained in MEIS ion blocking experiments of two LaAlO3/SrTiO3 heterostructures differing in their LaAlO3 layer thicknesses. In the LaAlO3 layers, the observed blocking dips are larger than expected. This enlargement is the result of the superposition of individual dips at slightly different angular positions revealing a local disorder in the atomic alignment, i.e., layer buckling. By contrast, in the SrTiO3 substrate, just below the interface, the obtained blocking dips are thinner than expected. This thinning indicates that the blocking atoms stand at a larger distance from the scattering center than expected. This is attributed to an accumulation of Sr vacancies at the layer/substrate interface which induces lattice distortions shifting the atoms off the scattering plane.

Writing and Reading of Ultrathin Ferroelectric Domains on Commensurate SrTiO3 on Silicon

NASA Astrophysics Data System (ADS)

Levy, Jeremy; Cen, Cheng; Sleasman, Charles R.; Warusawithana, Maitri; Schlom, Darrell G.

2008-03-01

Ferroelectricity in ultrathin epitaxial SrTiO3 grown commensurately by oxide-molecular beam epitaxy (MBE) on silicon substrates was investigated using piezoforce microscopy (PFM). A series of samples containing n molecular layers (ML) of SrTiO3 (n = 3, 4, 5, 6, 8, 10, 20) was grown on silicon substrates. Room-temperature ferroelectricity was observed for samples containing n = 5, 6, 8, 10 ML. Temperature-dependent measurements indicate that the sample with n = 5 exhibits a ferroelectric phase transition at Tc˜317 K. Sample with n = 6 remains ferroelectric up to at least 393K. Polar domains created on the n = 6 was found to be stable at room temperature for more than 72 hours. The implications of these results for fundamental and device-related applications will be discussed briefly.

Structural transition of secondary phase oxide nanorods in epitaxial YBa2Cu3O7-δ films on vicinal substrates

NASA Astrophysics Data System (ADS)

Shi, Jack J.; Wu, Judy Z.

2012-12-01

A theoretical study of a structural transition of secondary phase oxide nanorods in epitaxial YBa2Cu3O7-δ films on vicinal SrTiO3 substrates is presented. Two possible types of film/substrate interface are considered, with one assuming complete coherence, while the other is defective as manifested by the presence of antiphase grain boundaries. Only in the former case does the increase of the vicinal angle of the substrate lead to a substantial change of the strain field in the film, resulting in a transition of the nanorod orientation from the normal to the in-plane direction of the film. The calculated threshold vicinal angle for the onset of the transition and lattice deformation of the YBa2Cu3O7-δ film due to the inclusion of the nanorods is in very good agreement with experimental observations. This result sheds lights on the understanding of the role of the film/substrate lattice mismatch in controlling self-assembly of dopant nanostructures in matrix films.

Perovskite-based heterostructures integrating ferromagnetic-insulating La0.1Bi0.9MnO3

NASA Astrophysics Data System (ADS)

Gajek, M.; Bibes, M.; Barthélémy, A.; Varela, M.; Fontcuberta, J.

2005-05-01

We report on the growth of thin films and heterostructures of the ferromagnetic-insulating perovskite La0.1Bi0.9MnO3. We show that the La0.1Bi0.9MnO3 perovskite grows single phased, epitaxially, and with a single out-of-plane orientation either on SrTiO3 substrates or onto strained La2/3Sr1/3MnO3 and SrRuO3 ferromagnetic-metallic buffer layers. We discuss the magnetic properties of the La0.1Bi0.9MnO3 films and heterostructures in view of their possible potential as magnetoelectric or spin-dependent tunneling devices.

Dielectric and ferroelectric properties of strain-relieved epitaxial lead-free KNN-LT-LS ferroelectric thin films on SrTiO3 substrates

NASA Astrophysics Data System (ADS)

Abazari, M.; Akdoǧan, E. K.; Safari, A.

2008-05-01

We report the growth of single-phase (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated ⟨001⟩ oriented SrTiO3 substrates by using pulsed laser deposition. Films grown at 600°C under low laser fluence exhibit a ⟨001⟩ textured columnar grained nanostructure, which coalesce with increasing deposition temperature, leading to a uniform fully epitaxial highly stoichiometric film at 750°C. However, films deposited at lower temperatures exhibit compositional fluctuations as verified by Rutherford backscattering spectroscopy. The epitaxial films of 400-600nm thickness have a room temperature relative permittivity of ˜750 and a loss tangent of ˜6% at 1kHz. The room temperature remnant polarization of the films is 4μC /cm2, while the saturation polarization is 7.1μC/cm2 at 24kV/cm and the coercive field is ˜7.3kV/cm. The results indicate that approximately 50% of the bulk permittivity and 20% of bulk spontaneous polarization can be retained in submicron epitaxial KNN-LT-LS thin film, respectively. The conductivity of the films remains to be a challenge as evidenced by the high loss tangent, leakage currents, and broad hysteresis loops.

Irreversibility and carriers control in two-dimensional electron gas at LaTiO3/SrTiO3 interface

NASA Astrophysics Data System (ADS)

Bergeal, N.; Biscaras, J.; Hurand, S.; Feuillet-Palma, C.; Lesueur, J.; Rastogi, A.; Budhani, R. C.; Reyren, N.; Lesne, E.; Leboeuf, D.; Proust, C.

2013-03-01

It has been shown recently that a two-dimensional electron gas 2DEG could form at the interface of two insulators such as LaAlO3 and SrTiO3, or LaTiO3 (a Mott insulator) and SrTiO3. We present low temperature transport measurements on LaTiO3/SrTiO3 and LaAlO3/SrTiO3 hetero-structures, whose properties can be modulated by field effect using a metallic gate on the back of the substrate. Here we show that when the carrier density is electrostatically increased beyond a critical value, the added electrons escape into the SrTiO3 leading to an irreversible doping regime where all the electronic properties of the 2DEG saturate (carrier density, resistivity, superconducting transition...). The dynamic of leakage was studied using time resolved measurement. Based on a complete self-consistent description of the confinement well, a thermal model for the carriers escape has been developed, which quantitatively accounts for the data.

Effects of Surface Electron Doping and Substrate on the Superconductivity of Epitaxial FeSe Films.

PubMed

Zhang, W H; Liu, X; Wen, C H P; Peng, R; Tan, S Y; Xie, B P; Zhang, T; Feng, D L

2016-03-09

Superconductivity in FeSe is greatly enhanced in films grown on SrTiO3 substrates, although the mechanism behind remains unclear. Recently, surface potassium (K) doping has also proven able to enhance the superconductivity of FeSe. Here, by using scanning tunneling microscopy, we compare the K doping dependence of the superconductivity in FeSe films grown on two substrates: SrTiO3 (001) and graphitized SiC (0001). For thick films (20 unit cells (UC)), the optimized superconducting (SC) gaps are of similar size (∼9 meV) regardless of the substrate. However, when the thickness is reduced to a few UC, the optimized SC gap is increased up to ∼15 meV for films on SrTiO3, whereas it remains unchanged for films on SiC. This clearly indicates that the FeSe/SrTiO3 interface can further enhance the superconductivity, beyond merely doping electrons. Intriguingly, we found that this interface enhancement decays exponentially as the thickness increases, with a decay length of 2.4 UC, which is much shorter than the length scale for relaxation of the lattice strain, pointing to interfacial electron-phonon coupling as the likely origin.

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers

NASA Astrophysics Data System (ADS)

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

2017-12-01

High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10-4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately -60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.

Ionic Conductivity Increased by Two Orders of Magnitude in Micrometer-Thick Vertical Yttria-Stabilized ZrO 2 Nanocomposite Films

DOE PAGES

Lee, Shinbuhm; Zhang, Wenrui; Khatkhatay, Fauzia; ...

2015-09-03

We design and create a unique cell geometry of templated micrometer-thick epitaxial nanocomposite films which contain ~20 nm diameter yttria-stabilized ZrO 2 (YSZ) nanocolumns, strain coupled to a SrTiO 3 matrix. We also enhanced the ionic conductivity of these nanocolumnsby over 2 orders of magnitude compared to plain YSZ films. Concomitant with the higher ionic conduction is the finding that the YSZ nanocolumns in the films have much higher crystallinity and orientation, compared to plain YSZ films. Hence, “oxygen migration highways” are formed in the desired out-of-plane direction. This improved structure is shown to originate from the epitaxial coupling ofmore » the YSZ nanocolumns to the SrTiO 3 film matrix and from nucleation of the YSZ nanocolumns on an intermediate nanocomposite base layer of highly aligned Sm-doped CeO 2 nanocolumns within the SrTiO 3 matrix. Furthermore, this intermediate layer reduces the lattice mismatch between the YSZ nanocolumns and the substrate. Vertical ionic conduction values as high as 10 –2 Ω –1 cm –1 were demonstrated at 360 °C (300 °C lower than plain YSZ films), showing the strong practical potential of these nanostructured films for use in much lower operation temperature ionic devices.« less

High ferroelectric polarization in c-oriented BaTiO 3 epitaxial thin films on SrTiO 3/Si(001)

DOE PAGES

Scigaj, M.; Chao, C. H.; Gázquez, J.; ...

2016-09-21

The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3/LaNiO 3/SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2. Lastly, this result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.

Octahedral rotation patterns in strained EuFeO 3 and other Pbnm perovskite films: Implications for hybrid improper ferroelectricity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choquette, A. K.; Smith, C. R.; Sichel-Tissot, R. J.

2016-07-01

We report the relationship between epitaxial strain and the crystallographic orientation of the in-phase rotation axis and A-site displacements in Pbnm-type perovskite films. Synchrotron diffraction measurements of EuFeO3 films under strain states ranging from 2% compressive to 0.9% tensile on cubic or rhombohedral substrates exhibit a combination of a(-)a(+)c(-) and a(+)a(-)c(-) rotational patterns. We compare the EuFeO3 behavior with previously reported experimental and theoretical work on strained Pbnm-type films on nonorthorhombic substrates, as well as additional measurements from LaGaO3, LaFeO3, and Eu0.7Sr0.3MnO3 films on SrTiO3. Compiling the results from various material systems reveals a general strain dependence in which compressivemore » strain strongly favors a(-)a(+)c(-) and a(+)a(-)c(-) rotation patterns and tensile strain weakly favors a(-)a(-)c(+) structures. In contrast, EuFeO3 films grown on Pbnm-type GdScO3 under 2.3% tensile strain take on a uniform a(-)a(+)c(-) rotation pattern imprinted from the substrate, despite strain considerations that favor the a(-)a(-)c(+) pattern. These results point to the use of substrate imprinting as a more robust route than strain for tuning the crystallographic orientations of the octahedral rotations and A-site displacements needed to realize rotation-induced hybrid improper ferroelectricity in oxide heterostructures.« less

Octahedral rotation patterns in strained EuFeO 3 and other Pbnm perovskite films: Implications for hybrid improper ferroelectricity

DOE PAGES

Choquette, A. K.; Smith, C. R.; Sichel-Tissot, R. J.; ...

2016-07-07

Here, we report the relationship between epitaxial strain and the crystallographic orientation of the in-phase rotation axis and A -site displacements in Pbnm-type perovskite films. Synchrotron diffraction measurements of EuFeO 3 films under strain states ranging from 2% compressive to 0.9% tensile on cubic or rhombohedral substrates exhibit a combination of a - a + c - and a + a - c - rotational patterns. We compare the EuFeO 3 behavior with previously reported experimental and theoretical work on strained Pbnm-type films on nonorthorhombic substrates, as well as additional measurements from LaGaO 3 ,more » LaFeO 3 , and Eu 0.7Sr 0.3 MnO 3 films on SrTiO 3 . Compiling the results from various material systems reveals a general strain dependence in which compressive strain strongly favors a - a + c - and a + a - c - rotation patterns and tensile strain weakly favors a - a - c + structures. In contrast, EuFeO 3 films grown on Pbnm-type GdScO 3 under 2.3% tensile strain take on a uniform a - a + c - rotation pattern imprinted from the substrate, despite strain considerations that favor the a - a - c + pattern. Our results point to the use of substrate imprinting as a more robust route than strain for tuning the crystallographic orientations of the octahedral rotations and A -site displacements needed to realize rotation-induced hybrid improper ferroelectricity in oxide heterostructures.« less

High-Throughput Design of Two-Dimensional Electron Gas Systems Based on Polar/Nonpolar Perovskite Oxide Heterostructures

PubMed Central

Yang, Kesong; Nazir, Safdar; Behtash, Maziar; Cheng, Jianli

2016-01-01

The two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides such as LaAlO3 and SrTiO3 (STO) is of fundamental and practical interest because of its novel interfacial conductivity and its promising applications in next-generation nanoelectronic devices. Here we show that a group of combinatorial descriptors that characterize the polar character, lattice mismatch, band gap, and the band alignment between the perovskite-oxide-based band insulators and the STO substrate, can be introduced to realize a high-throughput (HT) design of SrTiO3-based 2DEG systems from perovskite oxide quantum database. Equipped with these combinatorial descriptors, we have carried out a HT screening of all the polar perovskite compounds, uncovering 42 compounds of potential interests. Of these, Al-, Ga-, Sc-, and Ta-based compounds can form a 2DEG with STO, while In-based compounds exhibit a strain-induced strong polarization when deposited on STO substrate. In particular, the Ta-based compounds can form 2DEG with potentially high electron mobility at (TaO2)+/(SrO)0 interface. Our approach, by defining materials descriptors solely based on the bulk materials properties, and by relying on the perovskite-oriented quantum materials repository, opens new avenues for the discovery of perovskite-oxide-based functional interface materials in a HT fashion. PMID:27708415

The atomic structure and polarization of strained SrTiO3/Si

NASA Astrophysics Data System (ADS)

Kumah, D. P.; Reiner, J. W.; Segal, Y.; Kolpak, A. M.; Zhang, Z.; Su, D.; Zhu, Y.; Sawicki, M. S.; Broadbridge, C. C.; Ahn, C. H.; Walker, F. J.

2010-12-01

For thin film devices based on coupling ferroelectric polarization to charge carriers in semiconductors, the role of the interface is critical. To elucidate this role, we use synchrotron x-ray diffraction to determine the interface structure of epitaxial SrTiO3 grown on the (001) surface of Si. The average displacement of the O octahedral sublattice relative to the Sr sublattice determines the film polarization and is measured to be about 0.05 nm toward the Si, with Ti off-center displacements 0.009 nm away from the substrate. Measurements of films with different boundary conditions on the top of the SrTiO3 show that the polarization at the SrTiO3/Si interface is dominated by oxide-Si chemical interactions.

Interdiffusion effect on strained La0.8Ba0.2MnO3 thin films by off-axis sputtering on SrTiO3 (100) substrates

NASA Astrophysics Data System (ADS)

Chou, Hsiung; Hsu, S. G.; Lin, C. B.; Wu, C. B.

2007-02-01

Strained La0.8Ba0.2MnO3 thin films on SrTiO3 (100) substrate are grown by an off-axis sputtering technique. It is found that the ferromagnetic temperature TC increases for thinner films. Secondary ion mass spectroscopy indicates that Sr diffuses partially into the film, making it structurally nonuniform. The region close to the film/substrate interface acts as La1-x(SryBa1-y)xMnO3 with a near negligible y for the as grown film and a non-negligible amount of y for the high-temperature postannealed film. The enhancement of TC is attributed to the combination of the strain and interdiffusion effects.

Electron Phonon Coupling versus Photoelectron Energy Loss at the Origin of Replica Bands in Photoemission of FeSe on SrTiO3

NASA Astrophysics Data System (ADS)

Li, Fengmiao; Sawatzky, George A.

2018-06-01

The recent observation of replica bands in single-layer FeSe /SrTiO3 by angle-resolved photoemission spectroscopy (ARPES) has triggered intense discussions concerning the potential influence of the FeSe electrons coupling with substrate phonons on the superconducting transition temperature. Here we provide strong evidence that the replica bands observed in the single-layer FeSe /SrTiO3 system and several other cases are largely due to the energy loss processes of the escaping photoelectron, resulted from the well-known strong coupling of external propagating electrons to Fuchs-Kliewer surface phonons in ionic materials in general. The photoelectron energy loss in ARPES on single-layer FeSe /SrTiO3 is calculated using the demonstrated successful semiclassical dielectric theory in describing low energy electron energy loss spectroscopy of ionic insulators. Our result shows that the observed replica bands are mostly a result of extrinsic photoelectron energy loss and not a result of the electron phonon interaction of the Fe d electrons with the substrate phonons. The strong enhancement of the superconducting transition temperature in these monolayers remains an open question.

Transport phenomena in SrVO3/SrTiO3 superlattices

NASA Astrophysics Data System (ADS)

Gu, Man; Wolf, Stuart A.; Lu, Jiwei

2018-03-01

Epitaxial [(SrVO3)7/(SrTiO3)4] r (SVO/STO) superlattices were grown on (0 0 1)-oriented LSAT substrates using a pulsed electron-beam deposition technique. The transport properties of the superlattices were investigated by varying the number of repetitions of the SVO/STO bilayers r (1  ⩽  r  ⩽  9). A single SVO/STO bilayer (r  =  1) was semiconducting, whereas an increase in the number of repetitions r resulted in metallic behavior in the superlattices with r  ⩾  3. The transport phenomena in the SVO/STO superlattices can be regarded as conduction through parallel-coupled SVO layers, the SVO layer embedded in the superlattices showed a great enhancement in the conductivity compared with the single SVO layer. This work provides further evidence of electronic phase separation in the SVO ultrathin layer that has been recently discovered, the SVO ultrathin layer is considered as a 2D Mott insulator with metallic and insulating phases coexisting, the coupling between SVO layers embedded in the SVO/STO superlattices creates more conduction pathways with increasing number of repetitions r, resulting in a crossover from insulating to metallic behavior.

Spatially modulated magnetic structure of EuS due to the tetragonal domain structure of SrTiO3

NASA Astrophysics Data System (ADS)

Rosenberg, Aaron J.; Katmis, Ferhat; Kirtley, John R.; Gedik, Nuh; Moodera, Jagadeesh S.; Moler, Kathryn A.

2017-12-01

The combination of ferromagnets with topological superconductors or insulators allows for new phases of matter that support excitations such as chiral edge modes and Majorana fermions. EuS, a wide-bandgap ferromagnetic insulator with a Curie temperature around 16 K, and SrTiO3 (STO), an important substrate for engineering heterostructures, may support these phases. We present scanning superconducting quantum interference device measurements of EuS grown epitaxially on STO that reveal micron-scale variations in ferromagnetism and paramagnetism. These variations are oriented along the STO crystal axes and only change their configuration upon thermal cycling above the STO cubic-to-tetragonal structural transition temperature at 105 K, indicating that the observed magnetic features are due to coupling between EuS and the STO tetragonal structure. We speculate that the STO tetragonal distortions may strain the EuS, altering the magnetic anisotropy on a micron scale. This result demonstrates that local variation in the induced magnetic order from EuS grown on STO needs to be considered when engineering new phases of matter that require spatially homogeneous exchange.

Resistance change effect in SrTiO3/Si (001) isotype heterojunction

NASA Astrophysics Data System (ADS)

Huang, Xiushi; Gao, Zhaomeng; Li, Pei; Wang, Longfei; Liu, Xiansheng; Zhang, Weifeng; Guo, Haizhong

2018-02-01

Resistance switching has been observed in double and multi-layer structures of ferroelectric films. The higher switching ratio opens up a vast path for emerging ferroelectric semiconductor devices. An n-n+ isotype heterojunction has been fabricated by depositing an oxide SrTiO3 layer on a conventional n-type Si (001) substrate (SrTiO3/Si) by pulsed laser disposition. Rectification and resistive switching behaviors in the n-n+ SrTiO3/Si heterojunction were observed by a conductive atomic force microscopy, and the n-n+ SrTiO3/Si heterojunction exhibits excellent endurance and retention characteristics. The possible mechanism was proposed based on the band structure of the n-n+ SrTiO3/Si heterojunction, and the observed electrical behaviors could be attributed to the modulation effect of the electric field reversal on the width of accumulation and the depletion region, as well as the height of potential of the n-n+ junction formed at the STO/Si interface. Moreover, oxygen vacancies are also indicated to play a crucial role in causing insulator to semiconductor transition. These results open the way to potential application in future microelectronic devices based on perovskite oxide layers on conventional semiconductors.

Nanoscale investigation of platinum nanoparticles on strontium titanium oxide grown via physical vapor deposition and atomic layer deposition

NASA Astrophysics Data System (ADS)

Christensen, Steven Thomas

This dissertation examines growth of platinum nanoparticles from vapor deposition on SrTiO3 using a characterization approach that combines imaging techniques and X-ray methods. The primary suite of characterization probes includes atomic force microscopy (AFM), grazing-incidence small-angle X-ray scattering (GISAXS), X-ray fluorescence (XRF), scanning electron microscopy (SEM), and X-ray absorption spectroscopy (XAS). The vapor deposition techniques include physical vapor deposition (PVD) by evaporation and atomic layer deposition (ALD). For the PVD platinum study, AFM/XRF showed ˜10 nm nanoparticles separated by an average of 100 nm. The combination of AFM, GISAXS, and XRF indicated that the nanoparticles observed with AFM were actually comprised of closely spaced, smaller nanoparticles. These conclusions were supported by high-resolution SEM. The unusual behavior of platinum nanoparticles to aggregate without coalescence or sintering was observed previously by other researchers using transmissision electron microscopy (TEM). Platinum nanoparticle growth was also investigated on SrTiO3 (001) single crystals using ALD to nucleate nanoparticles that subsequently grew and coalesced into granular films as the ALD progresses. The expected growth rate for the early stages of ALD showed a two-fold increase which was attributed to the platinum deposition occurring faster on the bare substrate. Once the nanoparticles had coalesced into a film, steady state ALD growth proceeded. The formation of nanoparticles was attributed to the atomic diffusion of platinum atoms on the surface in addition to direct growth from the ALD precursor gases. The platinum ALD nanoparticles were also studied on SrTiO3 nanocube powders. The SrTiO3 nanocubes average 60 nm on a side and the cube faces have a {001} orientation. The ALD proceeded in a similar fashion as on the single crystal substrates where the deposition rate was twice as fast as the steady state growth rate. The Pt nanoparticle size increased linearly starting at ˜0.7 nm for 1 ALD cycle to ˜3 nm for 5 ALD cycles. The platinum chemical state was also investigated using X-ray absorption spectroscopy. Platinum nanoparticles ˜1 nm or smaller tended to be oxidized. For larger nanoparticles, the platinum state systematically approached that of bulk platinum metal as the size (number of ALD cycles) increased. The platinum loading was exceptionally low, ˜10 -3 mg cm-2.

Structural phase transitions in SrTiO 3 nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Han; Liu, Sizhan; Scofield, Megan E.

2017-07-31

Pressure dependent structural measurements on monodispersed nanoscale SrTiO3 samples with average diameters of 10 to ~80 nm were conducted to enhance the understanding of the structural phase diagram of nanoscale SrTiO3. A robust pressure independent polar structure was found in the 10 nm sample for pressures up to 13 GPa, while a size dependent cubic to tetragonal transition occurs (at P = Pc) for larger particle sizes. The results suggest that the growth of ~10 nm STO particles on substrates with significant lattice mismatch may maintain a polar state for a large range of strain values, possibly enabling device use.

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers

PubMed Central

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

2017-01-01

Abstract High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10−4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately –60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements. PMID:28740558

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers.

PubMed

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

2017-01-01

High-quality thermoelectric La 0.2 Sr 0.8 TiO 3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO 3 (001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10 -4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO 3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately -60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.

Photovoltaic effect of ferroelectric Pb(Zr0.52,Ti0.48)O3 deposited on SrTiO3 buffered n-GaAs by laser molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhou, Yunxia; Zhu, Jun; Liu, Xingpeng; Wu, Zhipeng

Ferroelectric Pb(Zr0.52,Ti0.48)O3(PZT) thin film was grown on n-type GaAs (001) substrate with SrTiO3 (STO) buffer layer by laser molecular beam epitaxy (L-MBE). The epitaxial process of the STO was in situ monitored by reflection high-energy electron diffraction (RHEED). The crystallographical growth orientation relationship was revealed to be (002) 〈100〉 PZT//(002) 〈100〉 STO//(001) 〈110〉 GaAs by RHEED and X-ray diffraction (XRD). It was found that a small lattice mismatch between PZT and GaAs with a 45∘ in-plane rotation relationship can be formed by inserting of a buffer layer STO. Besides, the enhanced electrical properties of the heterostructure were obtained with the short-circuit photocurrent increased to 52mA/cm2 and the better power conversation efficiency increased by 20% under AM1.5G (100mW/cm2) illumination. The work could provide a way for the application of this kind of heterostructure with high photocurrent response in optoelectronic thin film devices.

Laser ablated high T(sub c) superconducting thin YBa2Cu3O(7-x) films on substrates suitable for microwave applications

NASA Astrophysics Data System (ADS)

Warner, J. D.; Meola, J. E.; Jenkins, K. A.; Bhasin, K. B.

1990-04-01

The development of high temperature superconducting YBa2Cu3O(7-x) thin films on substrates suitable for microwave applications is of great interest for evaluating their applications for space radar, communication, and sensor systems. Thin films of YBa2Cu3O(7-x) were formed on SrTiO3, ZrO2, MgO, and LaAlO3 substrates by laser ablation. The wavelength used was 248 nm from a KrF excimer laser. During deposition the films were heated to 600 C in a flowing oxygen environment, and required no post annealing. The low substrate temperature during deposition with no post annealing gave films which were smooth, which had their c-axis aligned to the substrates, and which had grains ranging from 0.2 to 0.5 microns in size. The films being c-axis aligned gave excellent surface resistance at 35 GHz which was lower than that of copper at 77 K. At present, LaAlO3 substrates with a dielectric constant of 22, appears suitable as a substrate for microwave and electronic applications. The films were characterized by resistance-temperature measurements, scanning electron microscopy, and x ray diffraction. The highest critical transition temperatures (T sub c) are above 89 K for films on SrTiO3 and LaAlO3, above 88 K for ZrO2, and above 86 K for MgO. The critical current density (J sub c) of the films on SrTiO3 is above 2 x 10(exp 6) amperes/sq cm at 77 K. The T(sub c) and J(sub c) are reported as a function of laser power, composition of the substrate, and temperature of the substrate during deposition.

Pulsed laser deposition of single layer, hexagonal boron nitride (white graphene, h-BN) on fiber-oriented Ag(111)/SrTiO3(001)

NASA Astrophysics Data System (ADS)

Velázquez, Daniel; Seibert, Rachel; Man, Hamdi; Spentzouris, Linda; Terry, Jeff

2016-03-01

We report on the growth of 1-10 ML films of hexagonal boron nitride (h-BN), also known as white graphene, on fiber-oriented Ag buffer films on SrTiO3(001) by pulsed laser deposition. The Ag buffer films of 40 nm thickness were used as substitutes for expensive single crystal metallic substrates. In-situ, reflection high-energy electron diffraction was used to monitor the surface structure of the Ag films and to observe the formation of the characteristic h-BN diffraction pattern. Further evidence of the growth of h-BN was provided by attenuated total reflectance spectroscopy, which showed the characteristic h-BN peaks at ˜780 cm-1 and 1367.4 cm-1. Ex-situ photoelectron spectroscopy showed that the surface of the h-BN films is stoichiometric. The physical structure of the films was confirmed by scanning electron microscopy. The h-BN films grew as large, sub-millimeter sheets with nano- and micro-sheets scattered on the surface. The h-BN sheets can be exfoliated by the micromechanical adhesive tape method. Spectral analysis was performed by energy dispersive spectroscopy in order to identify the h-BN sheets after exfoliation. The use of thin film Ag allows for reduced use of Ag and makes it possible to adjust the surface morphology of the thin film prior to h-BN growth.

Oxygen Vacancy Linear Clustering in a Perovskite Oxide

DOE PAGES

Eom, Kitae; Choi, Euiyoung; Choi, Minsu; ...

2017-07-14

Oxygen vacancies have been implicitly assumed isolated ones, and understanding oxide materials possibly containing oxygen vacancies remains elusive within the scheme of the isolated vacancies, although the oxygen vacancies have been playing a decisive role in oxide materials. We report the presence of oxygen vacancy linear clusters and their orientation along a specific crystallographic direction in SrTiO 3, a representative of a perovskite oxide. The presence of the linear clusters and associated electron localization was revealed by an electronic structure represented in the increase in the Ti 2+ valence state or corresponding Ti 3d 2 electronic configuration along with divacancymore » cluster model analysis and transport measurement. The orientation of the linear clusters along the [001] direction in perovskite SrTiO 3 was verified by further X-ray diffuse scattering analysis. And because SrTiO 3 is an archetypical perovskite oxide, the vacancy linear clustering with the specific aligned direction and electron localization can be extended to a wide variety of the perovskite oxides.« less

Oxygen Vacancy Linear Clustering in a Perovskite Oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eom, Kitae; Choi, Euiyoung; Choi, Minsu

Oxygen vacancies have been implicitly assumed isolated ones, and understanding oxide materials possibly containing oxygen vacancies remains elusive within the scheme of the isolated vacancies, although the oxygen vacancies have been playing a decisive role in oxide materials. We report the presence of oxygen vacancy linear clusters and their orientation along a specific crystallographic direction in SrTiO 3, a representative of a perovskite oxide. The presence of the linear clusters and associated electron localization was revealed by an electronic structure represented in the increase in the Ti 2+ valence state or corresponding Ti 3d 2 electronic configuration along with divacancymore » cluster model analysis and transport measurement. The orientation of the linear clusters along the [001] direction in perovskite SrTiO 3 was verified by further X-ray diffuse scattering analysis. And because SrTiO 3 is an archetypical perovskite oxide, the vacancy linear clustering with the specific aligned direction and electron localization can be extended to a wide variety of the perovskite oxides.« less

Carrier Density at LaAlO3/SrTiO3 Interfaces: Evidence of Electronic Reconstruction.

NASA Astrophysics Data System (ADS)

Xi, Xiaoxing

The origin of the 2D electron gas at the LaAlO3/SrTiO3 interface has been a controversial subject ever since its discovery. A serious inconsistency with the most accepted mechanism, an electronic reconstruction in response to a polar discontinuity at the interface, is that the carrier densities reported experimentally are invariably lower than the expected value except under conditions where reduction of SrTiO3 substrate is suspected. We have grown LaAlO3 films of different stoichiometry on TiO2-terminated SrTiO3 substrates using atomic layer-by-layer laser molecular beam epitaxy (ALL-Laser MBE), in which La2O3 and Al2O3 targets were sequentially ablated in 37 mTorr oxygen. The high oxygen pressure during growth prevents the possible oxygen reduction in SrTiO3, ensures that the LaAlO3 films are sufficiently oxygenated, and suppresses the La-Sr intermixing due to the bombardment effect. X-ray linear dichroism (XLD) and x-ray magnetic circular dichroism (XMCD) measurements show characteristics of oxygenated samples. In the electronic reconstruction picture, instead of the charge transfer of half of an electron in the case of a sufficiently thick stoichiometric LaAlO3, a LaAlO3 film thickness dependence is expected as well as a linear dependence on stoichiometry. Our experimental results on carrier densities in 10 nm-thick LaAl1 +yO3(1 +0.5y) films agree quantitatively with the theoretical expectations, lending a strong support for the electronic reconstruction mechanism. This material is based upon work supported by the U.S. Department of Energy, Office of Science, under Grant No. DE-SC0004764.

High-resolution x-ray diffraction and transmission electron microscopy of multiferroic BiFeO3 films

NASA Astrophysics Data System (ADS)

Qi, Xiaoding; Wei, Ming; Lin, Yuan; Jia, Quanxi; Zhi, Dan; Dho, Joonghoe; Blamire, Mark G.; MacManus-Driscoll, Judith L.

2005-02-01

High-resolution x-ray diffraction and transmission electron microscopy (TEM) have been used to study BiFeO3 thin films grown on the bare and SrRuO3 buffered (001) SrTiO3 substrates. Reciprocal space mapping (RSM) around (002) and (103) reflections revealed that BFO films with a thickness of about 200 nm were almost fully relaxed and had a rhombohedral structure. Cross-sectional, high-resolution TEM showed that the films started to relax at a very early stage of growth, which was consistent with the RSM results. A thin intermediate layer of about 2 nm was observed at the interface, which had a smaller lattice than the overgrown film. Twist distortions about the c axis to release the shear strain introduced by the growth of rhombic (001) BiFeO3 on cubic (001) SrTiO3 were also observed. The results indicate that a strained, coherent BiFeO3 film on (001) SrTiO3 is very difficult to maintain and (111) STO substrates are preferable.

High mobility La-doped BaSnO3 on non-perovskite MgO substrate

NASA Astrophysics Data System (ADS)

Kim, Youjung; Shin, Juyeon; Kim, Young Mo; Char, Kookrin

(Ba,La)SnO3 is a transparent perovskite oxide with high electron mobility and excellent oxygen stability. Field effect device with (Ba,La)SnO3 channel was reported to show good output characteristics on STO substrate. Here, we fabricated (Ba,La)SnO3\\ films and field effect devices with (Ba,La)SnO3 channel on non-perovskite MgO substrates, which are available in large size wafers. X-ray diffraction and transmission electron microscope (TEM) images of (Ba,La)SnO3\\ films on MgO substrates show that the films are epitaxial with many threading dislocations. (Ba,La)SnO3 exhibits the high mobility with 97.2 cm2/Vs at 2 % La doping on top of 150 nm thick BaSnO3 buffer layer. Excellent carrier modulation was observed in field effect devices. FET performances on MgO substrates are slightly better than those on SrTiO3 substrates in spite of the higher dislocation density on MgO than on SrTiO3 substrates. These high mobility BaSnO3 thin films and transistors on MgO substrates will accelerate development for applications in high temperature and high power electronics. Samsung Science and Technology Foundation.

Atomic and electronic structures of single-layer FeSe on SrTiO 3(001): The role of oxygen deficiency

DOE PAGES

Bang, Junhyeok; Li, Zhi; Sun, Y. Y.; ...

2013-06-06

Using first-principles calculation, we propose an interface structure for single triple-layer FeSe on the SrTiO 3(001) surface, a high-T c superconductor found recently. The key component of this structure is the oxygen deficiency on the top layer of the SrTiO 3 substrate, as a result of Se etching used in preparing the high-T c samples. The O vacancies strongly bind the FeSe triple layer to the substrate giving rise to a (2×1) reconstruction, as observed by scanning tunneling microscopy. The enhanced binding correlates to the significant increase of T c observed in experiment. The O vacancies also serve as themore » source of electron doping, which modifies the Fermi surface of the first FeSe layer by filling the hole pocket near the center of the surface Brillouin zone, as suggested from angle-resolved photoemission spectroscopy measurement.« less

Room-temperature growth of thin films of niobium on strontium titanate (0 0 1) single-crystal substrates for superconducting joints

NASA Astrophysics Data System (ADS)

Shimizu, Yuhei; Tonooka, Kazuhiko; Yoshida, Yoshiyuki; Furuse, Mitsuho; Takashima, Hiroshi

2018-06-01

With the eventual aim of forming joints between superconducting wires of YBa2Cu3O7-δ (YBCO), thin films of Nb were grown at room-temperature on SrTiO3 (STO) (0 0 1), a single-crystal substrate that shows good lattice matching with YBCO. The crystallinity, surface morphology, and superconducting properties of the Nb thin films were investigated and compared with those of similar films grown on a silica glass substrate. The Nb thin films grew with an (hh0) orientation on both substrates. The crystallinity of the Nb thin films on the STO substrate was higher than that on the silica glass substrate. X-ray diffraction measurements and observation of the surface morphology by atomic-force microscopy indicated that Nb grew in the plane along the [1 0 0] and [0 1 0] directions of the STO substrate. This growth mode relaxes strain between Nb and STO, and is believed to lead to the high crystallinity observed. As a result, the Nb thin films on the STO substrates showed lower electric resistivity and a higher superconducting transition temperature than did those on the silica glass substrates. The results of this study should be useful in relation to the production of superconducting joints.

Red-ultraviolet photoluminescence tuning by Ni nanocrystals in epitaxial SrTiO3 matrix

NASA Astrophysics Data System (ADS)

Xiong, Z. W.; Cao, L. H.

2018-07-01

In this work, the self-organized Ni nanocrystals (NCs) were embedded in the epitaxial SrTiO3 matrix using pulsed laser deposition method. With the in-situ monitoring of reflection high-energy electron diffraction, both matrix and NCs could be precisely engineered with desired qualities by regulating the growth conditions according to the full release of stress energy at the interfaces of Ni NCs and SrTiO3. We achieved a controllable strained system according to the transformation of growth modes from three dimensional (3D) islands of Ni NCs to 2D layer-by-layer of SrTiO3, corresponding to the (1 1 1) and (0 0 l) orientation for Ni and SrTiO3, respectively. With the increase of Ni NCs concentration, the absorption intensity is increasing in the regions of 190-300 nm, and the band gap is gradually decreased. Besides, photoluminescence (PL) spectra reveal that the energy levels of Ni 3d bands contribute to the different PL colors, further inducing the enhancement of PL intensity and red-shift of emission peaks. Compared with the pure SrTiO3 published in the literature, much wider ranges of PL emission from red to ultraviolet can be tuned by the Ni NCs.

Effect of oxygen concentration on the magnetic properties of La2CoMnO6 thin films

NASA Astrophysics Data System (ADS)

Guo, H. Z.; Gupta, A.; Zhang, Jiandi; Varela, M.; Pennycook, S. J.

2007-11-01

The dependence of the magnetic properties on oxygen concentration in epitaxial La2CoMnO6 thin films deposited on (100)-oriented SrTiO3 substrates has been investigated by varying the oxygen background pressure during growth using pulsed laser deposition. Two distinct ferromagnetic (FM) phases are revealed, and the relative fraction varies with the oxygen concentration. The existence of oxygen vacancies induces the local vibronic Mn3+-O -Co3+ superexchange interactions in direct competition with the static FM Mn4+-O-Co2+ interactions. This results in the appearance of a new low temperature FM phase and suppression of the high-temperature FM phase, creating two distinct magnetic phase transitions.

Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Mele, P.; Saini, S.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.

2013-06-01

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300 °C-600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10-3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Structural phase transitions in SrTiO 3 nanoparticles

DOE PAGES

Zhang, Han; Liu, Sizhan; Scofield, Megan E.; ...

2017-08-04

We present that pressure dependent structural measurements on monodispersed nanoscale SrTiO 3 samples with average diameters of 10 to ~80 nm were conducted to enhance the understanding of the structural phase diagram of nanoscale SrTiO 3. A robust pressure independent polar structure was found in the 10 nm sample for pressures up to 13 GPa, while a size dependent cubic to tetragonal transition occurs (at P = P c) for larger particle sizes. In conclusion, the results suggest that the growth of ~10 nm STO particles on substrates with significant lattice mismatch may maintain a polar state for a largemore » range of strain values, possibly enabling device use.« less

Interplay of point defects, biaxial strain, and thermal conductivity in homoepitaxial SrTiO3 thin films

NASA Astrophysics Data System (ADS)

Wiedigen, S.; Kramer, T.; Feuchter, M.; Knorr, I.; Nee, N.; Hoffmann, J.; Kamlah, M.; Volkert, C. A.; Jooss, Ch.

2012-02-01

Separating out effects of point defects and lattice strain on thermal conductivity is essential for improvement of thermoelectric properties of SrTiO3. We study relations between defects generated during deposition, induced lattice strain, and their impact on thermal conductivity κ in homoepitaxial SrTiO3 films prepared by ion-beam sputtering. Lowering the deposition temperature gives rise to lattice expansion by enhancement of point defect density which increases the hardness of the films. Due to a fully coherent substrate-film interface, the lattice misfit induces a large biaxial strain. However, we can show that the temperature dependence of κ is mainly sensitive on the defect concentration.

Tunable anomalous orbital structure in a spinel-perovskite interface γ-Al2O3/SrTiO3

NASA Astrophysics Data System (ADS)

Cao, Yanwei; Liu, Xiaoran; Shafer, Padraic; Middey, Srimanta; Meyers, Derek; Kareev, Mikhail; Zhong, Zhicheng; Kim, Jong-Woo; Ryan, Philip; Arenholz, Elke; Chakhalian, Jak

In all archetypical reported (001)-oriented perovskite heterostructures, for example LaTiO3/SrTiO3, LaAlO3/SrTiO3,YTiO3/SrTiO3 and so on, it has been deduced that the preferential occupation of two-dimensional electron gases is in-plane dxy state. In sharp contrast to this, the investigated electronic structure of a spinel-perovskite heterostructure γ-Al2O3/SrTiO3 by resonant soft X-ray linear dichroism, demonstrates that the preferential occupation is in out-of-plane dxz/dyz states for interfacial electrons. Moreover, the impact of strain further corroborates that this anomalous orbital structure can be linked to the altered crystal field at the interface and symmetry breaking of the interfacial structural units. Our findings provide another interesting route to engineer emergent quantum states with deterministic orbital symmetry. J.C. and Y.C. was supported by the Gordon and Betty Moore Foundation EPiQS Initiative through Grant No. GBMF4534. S.M. and M.K. were supported by the DOD-ARO under Grant No. 0402-172.

Thickness and angular dependent magnetic anisotropy of La0.67Sr0.33MnO3 thin films by Vectorial Magneto Optical Kerr Magnetometry

NASA Astrophysics Data System (ADS)

Chaluvadi, S. K.; Perna, P.; Ajejas, F.; Camarero, J.; Pautrat, A.; Flament, S.; Méchin, L.

2017-10-01

We investigate the in-plane magnetic anisotropy in La0.67Sr0.33MnO3 thin films grown on SrTiO3 (001) substrate using angular dependent room temperature Vectorial Magneto-Optical Kerr Magnetometry. The experimental data reveals that the magnetic anisotropy symmetry landscape significantly changes depending upon the strain and thickness. At low film thickness (12 and 25 nm) the dominant uniaxial anisotropy is due to interface effects, step edges due to mis-cut angle of SrTiO3 substrate. At intermediate thickness, the magnetic anisotropy presents a competition between magnetocrystalline (biaxial) and substrate step induced (uniaxial) anisotropy. Depending upon their relative strengths, a profound biaxial or uniaxial or mixed anisotropy is favoured. Above the critical thickness, magnetocrystalline anisotropy dominates all other effects and shows a biaxial anisotropy.

Magnetic and electronic properties of SrMnO3 thin films

NASA Astrophysics Data System (ADS)

Mandal, Arup Kumar; Panchal, Gyanendra; Choudhary, R. J.; Phase, D. M.

2018-05-01

Single phase hexagonal bulk SrMnO3 (SMO) was prepared by solid state route and it was used for depositing thin films by pulsed laser deposition (PLD) technique on single crystalline (100) oriented SrTiO3 (STO) substrate. X-ray diffraction shows that the thin film is deposited in cubic SrMnO3 phase. From X-ray absorption at the Mn L edge we observed the mixed valency of Mn (Mn3+& Mn4+) due to strain induced by the lattice mismatching between SMO and STO. Due to this mixed valency of Mn ion in SMO film, the ferromagnetic nature is observed at lower temperature because of double exchange. After post annealing with very low oxygen partial pressure, magnetic and electronic property of SMO films are effectively modified.

Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors

NASA Astrophysics Data System (ADS)

Lee, J.; Johnson, L.; Safari, A.; Ramesh, R.; Sands, T.; Gilchrist, H.; Keramidas, V. G.

1993-07-01

Pb(Zr(0.52)Ti(0.48))O3 (PZT)/Y1Ba2Cu3O(x) (YBCO) heterostructures were grown by pulsed laser deposition, in which PZT films were epitaxial, highly oriented, or polycrystalline. These PZT films were obtained by varying the deposition temperature from 550 to 760 C or by using various substrates such as SrTiO3 (100), MgO (100), and r-plane sapphire. PZT films with Pt top electrodes exhibited large fatigue with 35-50 percent loss of the remanent polarization after 10 exp 9 cycles, depending on the crystalline quality. Polycrystalline films showed better fatigue resistance than epitaxial or highly oriented films. However, PZT films with both top and bottom YBCO electrodes had significantly improved fatigue resistance for both epitaxial and polycrystalline films. Electrode material seems to be a more important parameter in fatigue than the crystalline quality of the PZT films.

Orientation-resolved domain mapping in tetragonal SrTiO 3 using polarized Raman spectroscopy

DOE PAGES

Gray, Jr., Dodd J.; Merz, Tyler A.; Hikita, Yasuyuki; ...

2016-12-16

Here, we present microscopically resolved, polarized spectroscopy of Raman scattering collected from tetragonal SrTiO 3. The anisotropic response of first-order Raman peaks within a single tetragonal domain has been measured. From these data, we assign symmetries to the phonons seen in the first-order Raman spectrum which is normally complicated by uncontrolled domain structure. Using a translation stage, we map the local domain orientation of a 3–μm 3 crystal volume near the laser focus and compare it to wide-field polarized images. This technique can be performed with readily available instruments and is relevant to the study of a wide range ofmore » related materials, interfaces, and devices.« less

Epitaxial Ba2IrO4 thin-films grown on SrTiO3 substrates by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Nichols, J.; Korneta, O. B.; Terzic, J.; Cao, G.; Brill, J. W.; Seo, S. S. A.

2014-03-01

We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metal-insulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr2IrO4. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlation energy. Our results suggest that BIO thin-films have great potential for realizing the interesting physical properties predicted in layered iridates.

Study of defects in an electroresistive Au/La2/3Sr1/3MnO3/SrTiO3(001) heterostructure by positron annihilation

NASA Astrophysics Data System (ADS)

Ferragut, R.; Dupaquier, A.; Brivio, S.; Bertacco, R.; Egger, W.

2011-09-01

Defects in an ultrathin Au/La2/3Sr1/3MnO3/SrTiO3 (Au/LSMO/STO) heterostructure displaying electroresistive behavior were studied using variable energy positron annihilation spectroscopy. Vacancy-like defects were found to be the dominant positron traps in the LSMO and STO thin perovskite oxides with a number density >1017 cm-3 and 2 × 1017 cm-3 in the STO substrate. High defect density was revealed by strong positron trapping at the Au/LSMO interface. Oxygen deficiency in LSMO would be the main source of these traps. Besides, a low density of sub-nano voids of ˜6 Å was found in the substrate and in the thin LSMO/STO films.

Spatially modulated magnetic structure of EuS due to the tetragonal domain structure of SrTiO 3

DOE PAGES

Rosenberg, Aaron J.; Katmis, Ferhat; Kirtley, John R.; ...

2017-12-15

The combination of ferromagnets with topological superconductors or insulators allows for new phases of matter that support excitations such as chiral edge modes and Majorana fermions. EuS, a wide-bandgap ferromagnetic insulator with a Curie temperature around 16K, and SrTiO 3 (STO), an important substrate for engineering heterostructures, may support these phases. We present scanning superconducting quantum interference device measurements of EuS grown epitaxially on STO that reveal micron-scale variations in ferromagnetism and paramagnetism. These variations are oriented along the STO crystal axes and only change their configuration upon thermal cycling above the STO cubic-to-tetragonal structural transition temperature at 105 K,more » indicating that the observed magnetic features are due to coupling between EuS and the STO tetragonal structure. Here, we speculate that the STO tetragonal distortions may strain the EuS, altering the magnetic anisotropy on a micron scale. This result demonstrates that local variation in the induced magnetic order from EuS grown on STO needs to be considered when engineering new phases of matter that require spatially homogeneous exchange.« less

Spatially modulated magnetic structure of EuS due to the tetragonal domain structure of SrTiO 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rosenberg, Aaron J.; Katmis, Ferhat; Kirtley, John R.

The combination of ferromagnets with topological superconductors or insulators allows for new phases of matter that support excitations such as chiral edge modes and Majorana fermions. EuS, a wide-bandgap ferromagnetic insulator with a Curie temperature around 16K, and SrTiO 3 (STO), an important substrate for engineering heterostructures, may support these phases. We present scanning superconducting quantum interference device measurements of EuS grown epitaxially on STO that reveal micron-scale variations in ferromagnetism and paramagnetism. These variations are oriented along the STO crystal axes and only change their configuration upon thermal cycling above the STO cubic-to-tetragonal structural transition temperature at 105 K,more » indicating that the observed magnetic features are due to coupling between EuS and the STO tetragonal structure. Here, we speculate that the STO tetragonal distortions may strain the EuS, altering the magnetic anisotropy on a micron scale. This result demonstrates that local variation in the induced magnetic order from EuS grown on STO needs to be considered when engineering new phases of matter that require spatially homogeneous exchange.« less

Stressor-layer-induced elastic strain sharing in SrTiO 3 complex oxide sheets

DOE PAGES

Tilka, J. A.; Park, J.; Ahn, Y.; ...

2018-02-26

A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO 3 sheets using a silicon nitride stressor layer. A conformal stressor layer deposited using plasma-enhanced chemical vapor deposition produces an elastic strain in the sheet consistent with the magnitude of the nitride residual stress. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO 3 sheets is on the order of 10 -4, matching the predictions of an elastic model. Using this approach to elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect notmore » achievable in heteroepitaxy on rigid substrates.« less

Stressor-layer-induced elastic strain sharing in SrTiO 3 complex oxide sheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tilka, J. A.; Park, J.; Ahn, Y.

A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO 3 sheets using a silicon nitride stressor layer. A conformal stressor layer deposited using plasma-enhanced chemical vapor deposition produces an elastic strain in the sheet consistent with the magnitude of the nitride residual stress. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO 3 sheets is on the order of 10 -4, matching the predictions of an elastic model. Using this approach to elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect notmore » achievable in heteroepitaxy on rigid substrates.« less

Structure and piezo-ferroelectricity relationship study of (K0.5Na0.5)0.985La0.005NbO3 epitaxial films deposited on SrTiO3 by sputtering.

PubMed

H Mŏk, H Linh; Martínez-Aguilar, E; Gervacio-Arciniega, J J; Vendrell, X; Siqueiros-Beltrones, J M; Raymond-Herrera, O

2017-12-18

This work demonstrates that the rf-sputtering technique, combined with appropriate heat treatments, is potentially effective to develop new materials and devices based on oxide-interface and strain engineering. We report a study of the structural-physical properties relationship of high crystalline quality, highly oriented and epitaxial thin films of the lead-free (K 0.5 Na 0.5 ) 0.985 La 0.005 NbO 3 (KNNLa) compound which were successfully deposited on Nb-doped SrTiO 3 substrates, with orientations [100] (NSTO100) and [110] (NSTO110). The crystalline growth and the local ferroelectric and piezoelectric properties were evaluated by piezoresponse force microscopy combined with transmission electron microscopy and texture analysis by X-ray diffraction. Conditioned by the STO surface parameters, in the KNNLa films on NSTO100 coexist a commensurate [001]-tetragonal phase and two incommensurate [010]-monoclinic phases; while on NSTO110 the KNNLa films grew only in an incommensurate [101]-monoclinic phase. Both samples show excellent out-of-plane polarization switching patterns consistent with 180° domains walls; while for KNNLa/NSTO100 ferroelectric domains grow with the polarization pointing down, for KNNLa/NSTO110 they prefer to grow with the polarization pointing up. Comparing with previous reports on epitaxial KNN films, we find our samples to be of very high quality regarding their crystalline growth with highly ordered ferroelectric domains arrangements and, consequently, great potential for domain engineering.

Processing of La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

NASA Astrophysics Data System (ADS)

Madakson, P.; Cuomo, J. J.; Yee, D. S.; Roy, R. A.; Scilla, G.

1988-03-01

High-quality La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 micron thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-(9 pct)Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, TEM, X-ray diffraction, and SIMS. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film.

Highly Oriented Growth of Piezoelectric Thin Films on Silicon Using Two-Dimensional Nanosheets as Growth Template Layer.

PubMed

Nguyen, Minh D; Yuan, Huiyu; Houwman, Evert P; Dekkers, Matthijn; Koster, Gertjan; Ten Elshof, Johan E; Rijnders, Guus

2016-11-16

Ca 2 Nb 3 O 10 (CNOns) and Ti 0.87 O 2 (TiOns) metal oxide nanosheets (ns) are used as a buffer layer for epitaxial growth of piezoelectric capacitor stacks on Si and Pt/Ti/SiO 2 /Si (Pt/Si) substrates. Highly (001)- and (110)-oriented Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) films are achieved by utilizing CNOns and TiOns, respectively. The piezoelectric capacitors are characterized by polarization and piezoelectric hysteresis loops and by fatigue measurements. The devices fabricated with SrRuO 3 top and bottom electrodes directly on nanosheets/Si have ferroelectric and piezoelectric properties well comparable with devices that use more conventional oxide buffer layers (stacks) such as YSZ, CeO 2 /YSZ, or SrTiO 3 on Si. The devices grown on nanosheets/Pt/Si with Pt top electrodes show significantly improved polarization fatigue properties over those of similar devices grown directly on Pt/Si. The differences in properties are ascribed to differences in the crystalline structures and the density of the films. These results show a route toward the fabrication of single crystal piezoelectric thin films and devices with high quality, long-lifetime piezoelectric capacitor structures on nonperovskite and even noncrystalline substrates such as glass or polished metal surfaces.

Growth, structure, and properties of epitaxial thin films of first-principles predicted multiferroic Bi2FeCrO6

NASA Astrophysics Data System (ADS)

Nechache, Riad; Harnagea, Catalin; Pignolet, Alain; Normandin, François; Veres, Teodor; Carignan, Louis-Philippe; Ménard, David

2006-09-01

The authors report the structural and physical properties of epitaxial Bi2FeCrO6 thin films on epitaxial SrRuO3 grown on (100)-oriented SrTiO3 substrates by pulsed laser ablation. The 300nm thick films exhibit both ferroelectricity and magnetism at room temperature with a maximum dielectric polarization of 2.8μC /cm2 at Emax=82kV/cm and a saturated magnetization of 20emu/cm3 (corresponding to ˜0.26μB per rhombohedral unit cell), with coercive fields below 100Oe. The results confirm the predictions made using ab initio calculations about the existence of multiferroic properties in Bi2FeCrO6.

Thermoelectric Properties of Al-Doped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Saini, S.; Mele, P.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Ichinose, A.

2014-06-01

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures ( T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K-2 at 600 K, surpassing the best AZO film previously reported in the literature.

Ellipsometric study of YBa2Cu3O(7-x) laser ablated and co-evaporated films

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Sieg, R. E.; Warner, J. D.; Stan, M. A.; Vitta, S.

1990-01-01

High temperature superconducting films of YBa2Cu3O(7-x) (YBCO were grown on SrTiO3, LaA1O3, and YSZ substrates using two techniques: excimer laser ablation with in situ annealing and co-evaporation of Y, Cu, and BaF2 with ex-situ annealing. Film thicknesses were typically 5000 A, with predominant c-axis alignment perpendicular to the substrate. Critical temperatures up to Tc(R=O)=90 K were achieved by both techniques. Ellipsometric measurements were taken in the range 1.6 to 4.3 eV using a variable angle spectroscopic ellipsometer. The complex dielectric function of the laser ablated films was reproducible from run to run, and was found to be within 10 percent of that previously reported for (001) oriented single crystals. A dielectric overlayer was observed in these films, with an index of refraction of approximately 1.55 and nearly zero absorption. For the laser ablated films the optical properties were essentially independent of substrate material. The magnitude of the dielectric function obtained for the co-evaported films was much lower than the value reported for single crystals, and was sample dependent.

Appearance and disappearance of ferromagnetism in ultrathin LaMnO3 on SrTiO3 substrate: A viewpoint from first principles

NASA Astrophysics Data System (ADS)

An, Ming; Weng, Yakui; Zhang, Huimin; Zhang, Jun-Jie; Zhang, Yang; Dong, Shuai

2017-12-01

The intrinsic magnetic state (ferromagnetic or antiferromagnetic) of ultrathin LaMnO3 films on the most commonly used SrTiO3 substrate is a long-existing question under debate. Either strain effect or nonstoichiometry was argued to be responsible for the experimental ferromagnetism. In a recent experiment [X. R. Wang, C. J. Li, W. M. Lü, T. R. Paudel, D. P. Leusink, M. Hoek, N. Poccia, A. Vailionis, T. Venkatesan, J. M. D. Coey, E. Y. Tsymbal, Ariando, and H. Hilgenkamp, Science 349, 716 (2015), 10.1126/science.aaa5198], one more mechanism, namely, the self-doping due to polar discontinuity, was argued to be the driving force of ferromagnetism beyond the critical thickness. Here systematic first-principles calculations have been performed to check these mechanisms in ultrathin LaMnO3 films as well as superlattices. Starting from the very precise descriptions of both LaMnO3 and SrTiO3, it is found that the compressive strain is the dominant force for the appearance of ferromagnetism, while the open surface with oxygen vacancies leads to the suppression of ferromagnetism. Within LaMnO3 layers, the charge reconstructions involve many competitive factors and certainly go beyond the intuitive polar catastrophe model established for LaAlO3/SrTiO3 heterostructures. Our paper not only explains the long-term puzzle regarding the magnetism of ultrathin LaMnO3 films but also sheds light on how to overcome the notorious magnetic dead layer in ultrathin manganites.

Two-dimensional superconductivity at a Mott insulator/band insulator interface LaTiO3/SrTiO3.

PubMed

Biscaras, J; Bergeal, N; Kushwaha, A; Wolf, T; Rastogi, A; Budhani, R C; Lesueur, J

2010-10-05

Transition metal oxides show a great variety of quantum electronic behaviours where correlations often have an important role. The achievement of high-quality epitaxial interfaces involving such materials gives a unique opportunity to engineer artificial structures where new electronic orders take place. One of the most striking result in this area is the recent observation of a two-dimensional electron gas at the interface between a strongly correlated Mott insulator LaTiO(3) and a band insulator SrTiO(3). The mechanism responsible for such a behaviour is still under debate. In particular, the influence of the nature of the insulator has to be clarified. In this article, we show that despite the expected electronic correlations, LaTiO(3)/SrTiO(3) heterostructures undergo a superconducting transition at a critical temperature T(c)(onset)~300 mK. We have found that the superconducting electron gas is confined over a typical thickness of 12 nm and is located mostly on the SrTiO(3) substrate.

Channelling study of La1-xSrxCoO3 films on different substrates

NASA Astrophysics Data System (ADS)

Szilágyi, E.; Kótai, E.; Rata, D.; Németh, Z.; Vankó, G.

2014-08-01

The cobalt oxide system LaCoO3 and its Sr-doped child compounds have been intensively studied for decades due to their intriguing magnetic and electronic properties. Preparing thin La1-xSrxCoO3 (LSCO) films on different substrates allows for studies with a new type of perturbation, as the films are subject to substrate-dependent epitaxial strain. By choosing a proper substrate for a thin film grow, not only compressing but also tensile strain can be applied. The consequences for the fundamental physical properties are dramatic: while compressed films are metallic, as the bulk material, films under tensile strain become insulating. The goal of this work is to determine the strain tensor in LSCO films prepared on LaAlO3 and SrTiO3 substrates by pulsed laser deposition using RBS/channelling methods. Apart from the composition and defect structure of the samples, the depth dependence of the strain tensor, the cell parameters, and the volume of the unit cell are also determined. Asymmetric behaviour of the strained cell parameters is found on both substrates. This asymmetry is rather weak in the case of LSCO film grown on LaAlO3, while stronger on SrTiO3 substrate. The strain is more effective at the interface, some relaxation can be observed near to the surface.

Hydrothermal epitaxy and resultant properties of EuTiO3 films on SrTiO3(001) substrate

PubMed Central

2014-01-01

We report a novel epitaxial growth of EuTiO3 films on SrTiO3(001) substrate by hydrothermal method. The morphological, structural, chemical, and magnetic properties of these epitaxial EuTiO3 films were examined by scanning electron microscopy, transmission electron microscopy, high-resolution X-ray diffractometry, X-ray photoelectron spectroscopy, and superconducting quantum interference device magnetometry, respectively. As-grown EuTiO3 films with a perovskite structure were found to show an out-of-plane lattice shrinkage and room-temperature ferromagnetism, possibly resulting from an existence of Eu3+. Postannealing at 1,000°C could reduce the amount of Eu3+, relax the out-of-plane lattice shrinkage, and impact the magnetic properties of the films. PACS 81.10.Aj; 81.15.-z; 61.05.-a PMID:24948889

Magneto-transport in LaTi1-xMnxO3/SrTiO3 oxide heterostructures

NASA Astrophysics Data System (ADS)

Kumar, Pramod; Dogra, Anjana; Budhani, R. C.

2014-04-01

We report the growth of ultrathin film of Mn doped LaTiO3 on TiO2 terminated SrTiO3 (001) substrate by pulsed laser deposition (PLD) and their electrical transport characteristics including magnetoresistance (MR). Though the replacement of Mn in LaTiO3 at the Ti site in dilute limit does not affect the metallic behaviour of films but variation in resistance is observed. Normalised resistance behaviour is explained on the basis of variation in charge carriers and increased interaction between Mn atoms in the system under investigation.

Glass-Like Through-Plane Thermal Conductivity Induced by Oxygen Vacancies in Nanoscale Epitaxial La 0.5Sr 0.5CoO 3– δ [Glass-Like Thermal Conductivity Induced by Oxygen Vacancies in Nanoscale Epitaxial La 0.5Sr 0.5CoO 3– δ

DOE PAGES

Wu, Xuewang; Walter, Jeff; Feng, Tianli; ...

2017-11-02

Here, ultrafast time-domain thermoreflectance (TDTR) is utilized to extract the through-plane thermal conductivity (Λ LSCO) of epitaxial La 0.5Sr 0.5CoO 3–δ (LSCO) of varying thickness (<20 nm) on LaAlO 3 and SrTiO 3 substrates. These LSCO films possess ordered oxygen vacancies as the primary means of lattice mismatch accommodation with the substrate, which induces compressive/tensile strain and thus controls the orientation of the oxygen vacancy ordering (OVO). TDTR results demonstrate that the room-temperature Λ LSCO of LSCO on both substrates (1.7 W m –1 K –1) are nearly a factor of four lower than that of bulk single-crystal LSCO (6.2more » W m –1 K –1). Remarkably, this approaches the lower limit of amorphous oxides (e.g., 1.3 W m –1 K –1 for glass), with no dependence on the OVO orientation. Through theoretical simulations, origins of the glass-like thermal conductivity of LSCO are revealed as a combined effect resulting from oxygen vacancies (the dominant factor), Sr substitution, size effects, and the weak electron/phonon coupling within the LSCO film. The absence of OVO dependence in the measured Λ LSCO is rationalized by two main effects: (1) the nearly isotropic phononic thermal conductivity resulting from the imperfect OVO planes when δ is small; (2) the missing electronic contribution to Λ LSCO along the through-plane direction for these ultrathin LSCO films on insulating substrates.« less

Glass-Like Through-Plane Thermal Conductivity Induced by Oxygen Vacancies in Nanoscale Epitaxial La 0.5Sr 0.5CoO 3– δ [Glass-Like Thermal Conductivity Induced by Oxygen Vacancies in Nanoscale Epitaxial La 0.5Sr 0.5CoO 3– δ

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Xuewang; Walter, Jeff; Feng, Tianli

Here, ultrafast time-domain thermoreflectance (TDTR) is utilized to extract the through-plane thermal conductivity (Λ LSCO) of epitaxial La 0.5Sr 0.5CoO 3–δ (LSCO) of varying thickness (<20 nm) on LaAlO 3 and SrTiO 3 substrates. These LSCO films possess ordered oxygen vacancies as the primary means of lattice mismatch accommodation with the substrate, which induces compressive/tensile strain and thus controls the orientation of the oxygen vacancy ordering (OVO). TDTR results demonstrate that the room-temperature Λ LSCO of LSCO on both substrates (1.7 W m –1 K –1) are nearly a factor of four lower than that of bulk single-crystal LSCO (6.2more » W m –1 K –1). Remarkably, this approaches the lower limit of amorphous oxides (e.g., 1.3 W m –1 K –1 for glass), with no dependence on the OVO orientation. Through theoretical simulations, origins of the glass-like thermal conductivity of LSCO are revealed as a combined effect resulting from oxygen vacancies (the dominant factor), Sr substitution, size effects, and the weak electron/phonon coupling within the LSCO film. The absence of OVO dependence in the measured Λ LSCO is rationalized by two main effects: (1) the nearly isotropic phononic thermal conductivity resulting from the imperfect OVO planes when δ is small; (2) the missing electronic contribution to Λ LSCO along the through-plane direction for these ultrathin LSCO films on insulating substrates.« less

Ion beam sputtering of in situ superconducting Y-Ba-Cu-O films

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.; Clauson, S. L.

1990-05-01

Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria stabilized zirconia and SrTiO3 substrates by ion-beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 83.5 K without post-deposition anneals. Both the deposition rate and the c-lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c-dimensions and low Tc. Higher-power sputtering produced a continuous decrease in the c-lattice parameter and increase in critical temperature. Films having the smaller c-lattice parameters were Cu rich. The Cu content of films deposited at beam voltages of 800 V and above increased with increasing beam power.

Garden-like perovskite superstructures with enhanced photocatalytic activity

NASA Astrophysics Data System (ADS)

Ye, Meidan; Wang, Mengye; Zheng, Dajiang; Zhang, Nan; Lin, Changjian; Lin, Zhiqun

2014-03-01

By subjecting amorphous flower-like TiO2 to a facile hydrothermal synthesis in the presence of Sr2+, garden-like perovskite SrTiO3 superstructures were achieved. The amorphous TiO2 was preformed using ZnO flowers as templates. Different three-dimensional SrTiO3 architectures were coexisted in the garden, including SrTiO3 flowers composed of several hollow sword-shaped petals, many sheet-shaped petals or numerous flake-shaped petals, and SrTiO3 grass consisting of a number of long blades. These SrTiO3 superstructures were simultaneously grown on fluorine-doped tin oxide (FTO) substrates. On the basis of a comprehensive study on the effects of growth time, temperature, initial concentrations of precursor, and pH, the formation of these various hierarchical architectures was attributed primarily to the dissolution of amorphous TiO2 and precipitation of perovskite crystals, followed by the Ostwald ripening process of perovskite nanocrystals and self-organization of perovskite building blocks. Interestingly, this approach can be readily extended to create other perovskite structures, including dendritic BaTiO3 and nest-like CaTiO3, as well as PbTiO3 transformed from plate-like pyrochlore Pb2Ti2O6 after post-thermal treatment. Garden-like SrTiO3 superstructures showed a superior photocatalytic performance when compared to other as-prepared semiconductors and perovskite materials (i.e., ZnO, TiO2, BaTiO3, CaTiO3 and PbTiO3), probably due to their intrinsic photocatalytic activity and special garden-like features with a coexistence of various structures that significantly facilitated the adsorption and diffusion of methyl blue (MB) molecules and oxygen species in the photochemical reaction of MB degradation.By subjecting amorphous flower-like TiO2 to a facile hydrothermal synthesis in the presence of Sr2+, garden-like perovskite SrTiO3 superstructures were achieved. The amorphous TiO2 was preformed using ZnO flowers as templates. Different three-dimensional SrTiO3 architectures were coexisted in the garden, including SrTiO3 flowers composed of several hollow sword-shaped petals, many sheet-shaped petals or numerous flake-shaped petals, and SrTiO3 grass consisting of a number of long blades. These SrTiO3 superstructures were simultaneously grown on fluorine-doped tin oxide (FTO) substrates. On the basis of a comprehensive study on the effects of growth time, temperature, initial concentrations of precursor, and pH, the formation of these various hierarchical architectures was attributed primarily to the dissolution of amorphous TiO2 and precipitation of perovskite crystals, followed by the Ostwald ripening process of perovskite nanocrystals and self-organization of perovskite building blocks. Interestingly, this approach can be readily extended to create other perovskite structures, including dendritic BaTiO3 and nest-like CaTiO3, as well as PbTiO3 transformed from plate-like pyrochlore Pb2Ti2O6 after post-thermal treatment. Garden-like SrTiO3 superstructures showed a superior photocatalytic performance when compared to other as-prepared semiconductors and perovskite materials (i.e., ZnO, TiO2, BaTiO3, CaTiO3 and PbTiO3), probably due to their intrinsic photocatalytic activity and special garden-like features with a coexistence of various structures that significantly facilitated the adsorption and diffusion of methyl blue (MB) molecules and oxygen species in the photochemical reaction of MB degradation. Electronic supplementary information (ESI) available: FESEM images and the XRD pattern of SrTiO3 films (effects of growth temperature, initial precursor concentration, and pH value), EDS analysis of ZnO, TiO2 and SrTiO3, the XRD pattern and PL spectra of PbTiO3, UV-vis spectra of different films, and UV photo-degradation of MB. See DOI: 10.1039/c3nr05564g

Crystallization dynamics and interface stability of strontium titanate thin films on silicon.

PubMed

Hanzig, Florian; Hanzig, Juliane; Mehner, Erik; Richter, Carsten; Veselý, Jozef; Stöcker, Hartmut; Abendroth, Barbara; Motylenko, Mykhaylo; Klemm, Volker; Novikov, Dmitri; Meyer, Dirk C

2015-04-01

Different physical vapor deposition methods have been used to fabricate strontium titanate thin films. Within the binary phase diagram of SrO and TiO 2 the stoichiometry ranges from Ti rich to Sr rich, respectively. The crystallization of these amorphous SrTiO 3 layers is investigated by in situ grazing-incidence X-ray diffraction using synchrotron radiation. The crystallization dynamics and evolution of the lattice constants as well as crystallite sizes of the SrTiO 3 layers were determined for temperatures up to 1223 K under atmospheric conditions applying different heating rates. At approximately 473 K, crystallization of perovskite-type SrTiO 3 is initiated for Sr-rich electron beam evaporated layers, whereas Sr-depleted sputter-deposited thin films crystallize at 739 K. During annealing, a significant diffusion of Si from the substrate into the SrTiO 3 layers occurs in the case of Sr-rich composition. This leads to the formation of secondary silicate phases which are observed by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy.

Structures, Properties and Defects of SrTiO3/GaAs Hetero-interfaces

NASA Astrophysics Data System (ADS)

Hong, Liang; Bhatnagar, Kunal; Droopad, Ravi; Öğüt, Serdar; Klie, Robert

SrTiO3 thin film can be epitaxially grown on GaAs substrate and used as a platform for growing other oxides to create functional metal-oxide-semiconductor devices, where a high-quality SrTiO3/GaAs interface is essential. We studied the structural and electronic properties of SrTiO3/GaAs hetero-interfaces at atomic level using scanning transmission electron microscopy and first-principles calculations. Our results suggest the preferred termination of GaAs (001) is significantly dependent on the oxygen concentration in the first oxide layer. The favorable interface structure is characterized as oxygen-deficient SrO in contact with arsenic and is observed in both experiment and simulation. The electronic properties are calculated and found to be tunable by interfacial defects such as oxygen, gallium and arsenic vacancies. This work was supported by the National Science Foundation (Grant No. DMR-1408427). This work made use of instruments in the Electron Microscopy Service and the High Performance Computing Clusters at University of Illinois at Chicago.

Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)2As2

NASA Astrophysics Data System (ADS)

Wang, R.; Huang, Z. X.; Zhao, G. Q.; Yu, S.; Deng, Z.; Jin, C. Q.; Jia, Q. J.; Chen, Y.; Yang, T. Y.; Jiang, X. M.; Cao, L. X.

2017-04-01

Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O3 substrate with their magnetic polarization aligned almost solely on the film growth direction.

Domain ordering of strained 5 ML SrTiO3 films on Si(001)

NASA Astrophysics Data System (ADS)

Ryan, P.; Wermeille, D.; Kim, J. W.; Woicik, J. C.; Hellberg, C. S.; Li, H.

2007-05-01

High resolution x-ray diffraction data indicate ordered square shaped coherent domains, ˜1200Å in length, coexisting with longer, ˜9500Å correlated regions in highly strained 5 ML SrTiO3 films grown on Si(001). These long range film structures are due to the Si substrate terraces defined by the surface step morphology. The silicon surface "step pattern" is comprised of an "intrinsic" terrace length from strain relaxation and a longer "extrinsic" interstep distance due to the surface miscut.

Two-dimensional superconductivity induced by high-mobility carrier doping in LaTiO3/SrTiO3 hetero-structures

NASA Astrophysics Data System (ADS)

Biscaras, Johan; Hurand, S.; Palma, C.; Lesueur, J.; Bergeal, N.; Leboeuf, D.; Proust, C.; Rastogi, A.; Budhani, R. C.

2013-03-01

Transition metal oxides display a great variety of quantum electronic behaviors where correlations often play an important role. The achievement of high quality epitaxial interfaces involving such materials gives a unique opportunity to engineer artificial materials where new electronic orders take place. It has been shown recently that a two-dimensional electron gas 2DEG could form at the interface of two insulators such as LaAlO3 and SrTiO3, or LaTiO3 (a Mott insulator) and SrTiO3. We show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose properties can be modulated by field effect using a metallic gate on the back of the substrate. The gas consists of two types of carriers : a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic doping. The calculation of the electrons spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by field effect.

Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

NASA Technical Reports Server (NTRS)

Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

1988-01-01

Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

Metallic conductance at the interface of tri-color titanate superlattices

NASA Astrophysics Data System (ADS)

Kareev, M.; Cao, Yanwei; Liu, Xiaoran; Middey, S.; Meyers, D.; Chakhalian, J.

2013-12-01

Ultra-thin tri-color (tri-layer) titanate superlattices ([3 u.c. LaTiO3/2 u.c. SrTiO3/3 u.c. YTiO3], u.c. = unit cells) were grown in a layer-by-layer way on single crystal TbScO3 (110) substrates by pulsed laser deposition. High sample quality and electronic structure were characterized by the combination of in-situ photoelectron and ex-situ structure and surface morphology probes. Temperature-dependent sheet resistance indicates the presence of metallic interfaces in both [3 u.c. LaTiO3/2 u.c. SrTiO3] bi-layers and all the tri-color structures, whereas a [3 u.c. YTiO3/2 u.c. SrTiO3] bi-layer shows insulating behavior. Considering that in the bulk YTiO3 is ferromagnetic below 30 K, the tri-color titanate superlattices provide an opportunity to induce tunable spin-polarization into the two-dimensional electron gas with Mott carriers.

Domain matching epitaxy of BaBiO3 on SrTiO3 with structurally modified interface

NASA Astrophysics Data System (ADS)

Zapf, M.; Stübinger, M.; Jin, L.; Kamp, M.; Pfaff, F.; Lubk, A.; Büchner, B.; Sing, M.; Claessen, R.

2018-04-01

The perovskite BaBiO3 (BBO) is a versatile oxide parent material which displays superconductivity upon p-doping, while n-doping has been predicted to establish a wide-bandgap topological insulator phase. Here, we report on a mechanism that allows for epitaxial deposition of high-quality crystalline BBO thin films on SrTiO3 substrates despite a significant lattice mismatch of as large as 12%. It is revealed that the growth takes place through domain matching epitaxy, resulting in domains with alternating lateral sizes of 8 and 9 BBO unit cells. In particular, a structurally modified interface layer is identified which serves as a nucleation layer for the BBO films and gradually relieves the strain by decoupling the film lattice from the substrate. The BBO growth mechanism identified here may be prototypical for prospective thin film deposition of other perovskites with large lattice constants.

Leakage current behavior in lead-free ferroelectric (K,Na)NbO3-LiTaO3-LiSbO3 thin films

NASA Astrophysics Data System (ADS)

Abazari, M.; Safari, A.

2010-12-01

Conduction mechanisms in epitaxial (001)-oriented pure and 1 mol % Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrate were investigated. Temperature dependence of leakage current density was measured as a function of applied electric field in the range of 200-380 K. It was shown that the different transport mechanisms dominate in pure and Mn-doped thin films. In pure (KNN-LT-LS) thin films, Poole-Frenkel emission was found to be responsible for the leakage, while Schottky emission was the dominant mechanism in Mn-doped thin films at higher electric fields. This is a remarkable yet clear indication of effect of 1 mol % Mn on the resistive behavior of such thin films.

Difference between blocking and Néel temperatures in the exchange biased Fe3O4/CoO system.

PubMed

van der Zaag, P J; Ijiri, Y; Borchers, J A; Feiner, L F; Wolf, R M; Gaines, J M; Erwin, R W; Verheijen, M A

2000-06-26

The blocking temperature T(B) has been determined as a function of the antiferromagnetic layer thickness in the Fe3O4/CoO exchange biased system. For CoO layers thinner than 50 A, T(B) is reduced below the Néel temperature T(N) of bulk CoO (291 K), independent of crystallographic orientation or film substrate ( alpha-Al2O3, SrTiO3, and MgO). Neutron diffraction studies show that T(B) does not track the CoO ordering temperature and, hence, that this reduction in T(B) does not arise from finite-size scaling. Instead, the ordering temperature of the CoO layers is enhanced above the bulk T(N) for layer thicknesses approximately less than or equal to 100 A due to the proximity of magnetic Fe3O4 layers.

Fabrication Of SNS Weak Links On SOS Substrates

NASA Technical Reports Server (NTRS)

Hunt, Brian D.

1995-01-01

High-quality superconductor/normal-conductor/superconductor (SNS) devices ("weak links") containing epitaxial films of YBa(2)Cu(3)O(7-x) and SrTiO(3) fabricated on silicon-on-sapphire (SOS) substrates with help of improved multilayer buffer system. Process for fabrication of edge-defined SNS weak links described in "Edge-Geometry SNS Devices Made of Y/Ba/Cu" (NPO-18552).

Growth and electrical transport properties of La 0.7 Sr 0.3 MnO 3 thin films on Sr 2 IrO 4 single crystals

DOE PAGES

Moon, E. J.; May, A. F.; Shafer, P.; ...

2017-04-20

Here, we report the physical properties of La 0.7 Sr 0.3 MnO 3 thin films on Sr 2 IrO 4 single crystals. We also deposited the manganite films using oxide molecular beam epitaxy on flux-grown (001)-oriented iridate crystals. Temperature-dependent magnetotransport and x-ray magnetic circular dichroism measurements reveal the presence of a ferromagnetic metallic ground state in the films, consistent with films grown on SrTiO 3 and La 0.3 Sr 0.7 Al 0.65 Ta 0.35 O 3 . A parallel resistance model is used to separate conduction effects within the Sr 2 IrO 4 substrate and the La 0.7 Sr 0.3more » MnO 3 thin films, revealing that the measured resistance maximum does not correspond to the manganite Curie temperature but results from a convolution of properties of the near-insulating substrate and metallic film. Furthermore, the ability to grow and characterize epitaxial perovskites on Sr 2 IrO 4 crystals enables a new route for studying magnetism at oxide interfaces in the presence of strong spin-orbit interactions.« less

Surface Termination Conversion during SrTiO3 Thin Film Growth Revealed by X-ray Photoelectron Spectroscopy

PubMed Central

Baeumer, Christoph; Xu, Chencheng; Gunkel, Felix; Raab, Nicolas; Heinen, Ronja Anika; Koehl, Annemarie; Dittmann, Regina

2015-01-01

Emerging electrical and magnetic properties of oxide interfaces are often dominated by the termination and stoichiometry of substrates and thin films, which depend critically on the growth conditions. Currently, these quantities have to be measured separately with different sophisticated techniques. This report will demonstrate that the analysis of angle dependent X-ray photoelectron intensity ratios provides a unique tool to determine both termination and stoichiometry simultaneously in a straightforward experiment. Fitting the experimental angle dependence with a simple analytical model directly yields both values. The model is calibrated through the determination of the termination of SrTiO3 single crystals after systematic pulsed laser deposition of sub-monolayer thin films of SrO. We then use the model to demonstrate that during homoepitaxial SrTiO3 growth, excess Sr cations are consumed in a self-organized surface termination conversion before cation defects are incorporated into the film. We show that this termination conversion results in insulating properties of interfaces between polar perovskites and SrTiO3 thin films. These insights about oxide thin film growth can be utilized for interface engineering of oxide heterostructures. In particular, they suggest a recipe for obtaining two-dimensional electron gases at thin film interfaces: SrTiO3 should be deposited slightly Ti-rich to conserve the TiO2-termination. PMID:26189436

Phase transitions and electrical behavior of lead-free (K0.50Na0.50)NbO3 thin film

NASA Astrophysics Data System (ADS)

Wu, Jiagang; Wang, John

2009-09-01

Lead-free (K0.50Na0.50)NbO3 (KNN) thin films with a high degree of (100) preferred orientation were deposited on the SrRuO3-buffered SrTiO3(100) substrate by off-axis radio frequency magnetron sputtering. They possess lower phase transition temperatures (To-t˜120 °C and Tc˜310 °C), as compared to those of KNN bulk ceramic (To-t˜190 °C and Tc˜400 °C). They also demonstrate enhanced ferroelectric behavior (e.g., 2Pr=24.1 μc/cm2) and fatigue endurance, together with a lower dielectric loss (tan δ ˜0.017) and a lower leakage current, as compared to the bulk ceramic counterpart. Oxygen vacancies are shown to be involved in the conduction of the KNN thin film.

Growth and giant coercive field of spinel-structured Co3- x Mn x O4 thin films

NASA Astrophysics Data System (ADS)

Kwak, Yongsu; Song, Jonghyun; Koo, Taeyeong

2016-08-01

We grew epitaxial thin films of CoMn2O4 and Co2MnO4 on Nb-doped SrTiO3(011) and SrTiO3(001) single crystal substrates using pulsed laser deposition. The magnetic Curie temperature ( T c ) of the Co2MnO4 thin films was ~176 K, which is higher than that of the bulk whereas CoMn2O4 thin films exhibited a value of T c (~151 K) lower than that of the bulk. For the Co2MnO4 thin films, the M - H loop showed a coercive field of ~0.7 T at 10 K, similar to the value for the bulk. However, the M -H loop of the CoMn2O4(0 ll) thin film grown on a Nb-doped SrTiO3(011) substrate exhibited a coercive field of ~4.5 T at 30 K, which is significantly higher than those of the Co2MnO4 thin film and bulk. This giant coercive field, only observed for the CoMn2O4(0 ll) thin film, can be attributed to the shape anisotropy and strong spin-orbit coupling.

Enhanced superconductivity due to forward scattering in FeSe thin films on SrTiO 3 substrates

DOE PAGES

Rademaker, Louk; Wang, Yan; Berlijn, Tom; ...

2016-02-10

In this paper, we study the consequences of an electron–phonon (e–ph) interaction that is strongly peaked in the forward scattering (more » $${\\bf{q}}=0$$) direction in a two-dimensional superconductor using Migdal–Eliashberg theory. We find that strong forward scattering results in an enhanced T c that is linearly proportional to the strength of the dimensionless e–ph coupling constant $${\\lambda }_{m}$$ in the weak coupling limit. This interaction also produces distinct replica bands in the single-particle spectral function, similar to those observed in recent angle-resolved photoemission experiments on FeSe monolayers on SrTiO 3 and BaTiO 3 substrates. Finally, by comparing our model to photoemission experiments, we infer an e–ph coupling strength that can provide a significant portion of the observed high T c in these systems.« less

Strain-induced nanostructure of Pb(Mg1/3Nb2/3)O3-PbTiO3 on SrTiO3 epitaxial thin films with low PbTiO3 concentration

NASA Astrophysics Data System (ADS)

Kiguchi, Takanori; Fan, Cangyu; Shiraishi, Takahisa; Konno, Toyohiko J.

2017-10-01

The singularity of the structure in (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) (x = 0-50 mol %) epitaxial thin films of 100 nm thickness was investigated from the viewpoint of the localized residual strain in the nanoscale. The films were deposited on SrTiO3 (STO) (001) single-crystal substrates by chemical solution deposition (CSD) using metallo-organic decomposition (MOD) solutions. X-ray and electron diffraction patterns revealed that PMN-xPT thin films included a single phase of the perovskite-type structure with the cube-on-cube orientation relationship between PMN-xPT and STO: (001)Film ∥ (001)Sub, [100]Film ∥ [100]Sub. X-ray reciprocal space maps showed an in-plane tensile strain in all the compositional ranges considered. Unit cells in the films were strained from the rhombohedral (pseudocubic) (R) phase to a lower symmetry crystal system, the monoclinic (MB) phase. The morphotropic phase boundary (MPB) that split the R and tetragonal (T) phases was observed at x = 30-35 for bulk crystals of PMN-xPT, whereas the strain suppressed the transformation from the R phase to the T phase in the films up to x = 50. High-angle annular dark field-scanning transmission electron microscopy (HAADF-STEM) analysis and its related local strain analysis revealed that all of the films have a bilayer morphology. The nanoscale strained layer formed only above the film/substrate semi-coherent interface. The misfit dislocations generated the localized and periodic strain fields deformed the unit cells between the dislocation cores from the R to an another type of the monoclinic (MA) phase. Thus, the singular and localized residual strains in the PMN-xPT/STO (001) epitaxial thin films affect the phase stability around the MPB composition and result in the MPB shift phenomena.

Self-organization in complex oxide thin films: from 2D to 0D nanostructures of SrRuO3 and CoCr2O4

NASA Astrophysics Data System (ADS)

Sánchez, F.; Lüders, U.; Herranz, G.; Infante, I. C.; Fontcuberta, J.; García-Cuenca, M. V.; Ferrater, C.; Varela, M.

2005-05-01

We report here on the controlled fabrication of nanostructures of varied dimensionality by self-organization processes in the heteroepitaxial growth of SrRuO3 (SRO) and CoCr2O4 (CCO) films. The surface of SRO films on SrTiO3(001) substrates can show extremely smooth terraces (2D objects) separated by atomic steps, a structure of faceted islands (0D objects), a cross-hatch morphology (1D objects), an array of finger-like units (1D objects), or an array of giant bunched steps (1D objects). The surface can be tailored to a particular structure by controlling the vicinality of the substrate and the growth rate and nominal thickness of the film. In the case of CCO films, grown on (001)-oriented MgAl2O4 or MgO substrates, high aspect ratio {111}-faceted pyramids and hut clusters (0D objects), highly oriented and having a similar size, appear above a critical thickness. The size and spatial density can be tuned by varying deposition temperature, nominal thickness, and substrate. This dependence allows the fabrication of surfaces being fully faceted (2D objects), or having arrays of dislocated pyramids of up to micrometric size, or small coherently lattice strained pyramids having a nanometric size. We discuss the driving forces that originate the peculiar SRO and CCO nanostructures. The findings illustrate that the growth of complex oxides can promote a variety of novel self-organized morphologies, and suggest original strategies to fabricate templates or hybrid structures of oxides combining varied functionalities.

Optical properties of epitaxial BiFeO3 thin film grown on SrRuO3-buffered SrTiO3 substrate.

PubMed

Xu, Ji-Ping; Zhang, Rong-Jun; Chen, Zhi-Hui; Wang, Zi-Yi; Zhang, Fan; Yu, Xiang; Jiang, An-Quan; Zheng, Yu-Xiang; Wang, Song-You; Chen, Liang-Yao

2014-01-01

The BiFeO3 (BFO) thin film was deposited by pulsed-laser deposition on SrRuO3 (SRO)-buffered (111) SrTiO3 (STO) substrate. X-ray diffraction pattern reveals a well-grown epitaxial BFO thin film. Atomic force microscopy study indicates that the BFO film is rather dense with a smooth surface. The ellipsometric spectra of the STO substrate, the SRO buffer layer, and the BFO thin film were measured, respectively, in the photon energy range 1.55 to 5.40 eV. Following the dielectric functions of STO and SRO, the ones of BFO described by the Lorentz model are received by fitting the spectra data to a five-medium optical model consisting of a semi-infinite STO substrate/SRO layer/BFO film/surface roughness/air ambient structure. The thickness and the optical constants of the BFO film are obtained. Then a direct bandgap is calculated at 2.68 eV, which is believed to be influenced by near-bandgap transitions. Compared to BFO films on other substrates, the dependence of the bandgap for the BFO thin film on in-plane compressive strain from epitaxial structure is received. Moreover, the bandgap and the transition revealed by the Lorentz model also provide a ground for the assessment of the bandgap for BFO single crystals.

Preparation of c-axis perpendicularly oriented ultra-thin L10-FePt films on MgO and VN underlayers

NASA Astrophysics Data System (ADS)

Futamoto, Masaaki; Shimizu, Tomoki; Ohtake, Mitsuru

2018-05-01

Ultra-thin L10-FePt films of 2 nm average thickness are prepared on (001) oriented MgO and VN underlayers epitaxially grown on base substrate of SrTiO3(001) single crystal. Detailed cross-sectional structures are observed by high-resolution transmission electron microscopy. Continuous L10-FePt(001) thin films with very flat surface are prepared on VN(001) underlayer whereas the films prepared on MgO(001) underlayer consist of isolated L10-FePt(001) crystal islands. Presence of misfit dislocation and lattice bending in L10-FePt material is reducing the effective lattice mismatch with respect to the underlayer to be less than 0.5 %. Formation of very flat and continuous FePt layer on VN underlayer is due to the large surface energy of VN material where de-wetting of FePt material at high temperature annealing process is suppressed under a force balance between the surface and interface energies of FePt and VN materials. An employment of underlayer or substrate material with the lattice constant and the surface energy larger than those of L10-FePt is important for the preparation of very thin FePt epitaxial thin continuous film with the c-axis controlled to be perpendicular to the substrate surface.

Tuning the magnetic properties of LaCoO3 thin films by epitaxial strain

NASA Astrophysics Data System (ADS)

Fuchs, D.; Arac, E.; Pinta, C.; Schuppler, S.; Schneider, R.; v. Löhneysen, H.

2008-01-01

Ferromagnetic order can be induced in LaCoO3 (LCO) thin films by epitaxial strain. Here, we show that the magnetic properties can be “tuned” by epitaxial strain imposed on LCO thin films by the epitaxial growth on various substrate materials, i.e., (001) oriented SrLaAlO4 , LaAlO3 , SrLaGaO4 , (LaAlO3)0.3(Sr2AlTaO6)0.7 , and SrTiO3 . The lattice mismatch at room temperature of the in-plane lattice parameters between the substrate, as , and bulk LCO, ab , ranges from -1.31% to +2.63% . Single-phase, ⟨001⟩ oriented LCO thin films were grown by pulsed laser deposition on all these substrates. Due to the difference of the thermal-expansion coefficients between LCO and the substrates, the films experience an additional tensile strain of about +0.3% during the cooling process after the deposition at Ts=650°C . The film lattice parameters display an elastic behavior, i.e., an increase of the in-plane film lattice parameter with increasing as . From the ratio between the out-of-plane and in-plane strain, we obtain a Poisson ratio of ν≈1/3 . All films show a ferromagnetic transition as determined from magnetization measurements. The magnetization increases strongly with increasing tensile strain, whereas the transition temperature TC after a rapid initial rise appears to saturate at TC≈85K above a=3.86Å . The effective magnetic moment μeff in the paramagnetic state increases almost linearly as a function of the mean lattice parameter ⟨a⟩ , indicating an enhanced population of higher spin states, i.e., intermediate- or high-spin states. The experimental results are discussed in terms of a decrease of the octahedral-site rotation with increasing tensile strain.

Polarization Rotation in Ferroelectric Tricolor PbTiO3/SrTiO3/PbZr0.2Ti0.8O3 Superlattices.

PubMed

Lemée, Nathalie; Infante, Ingrid C; Hubault, Cécile; Boulle, Alexandre; Blanc, Nils; Boudet, Nathalie; Demange, Valérie; Karkut, Michael G

2015-09-16

In ferroelectric thin films, controlling the orientation of the polarization is a key element to controlling their physical properties. We use laboratory and synchrotron X-ray diffraction to investigate ferroelectric bicolor PbTiO3/PbZr0.2Ti0.8O3 and tricolor PbTiO3/SrTiO3/PbZr0.2Ti0.8O3 superlattices and to study the role of the SrTiO3 layers on the domain structure. In the tricolor superlattices, we demonstrate the existence of 180° ferroelectric stripe nanodomains, induced by the depolarization field produced by the SrTiO3 layers. Each ultrathin SrTiO3 layer modifies the electrostatic boundary conditions between the ferroelectric layers compared to the corresponding bicolor structures, leading to the suppression of the a/c polydomain states. Combined with the electrostatic effect, the tensile strain induced by PbZr0.2Ti0.8O3 in the PbTiO3 layers leads to polarization rotation in the system as evidenced by grazing incidence X-ray measurements. This polarization rotation is associated with the monoclinic Mc phase as revealed by the splitting of the (HHL) and (H0L) reciprocal lattice points. This work demonstrates that the tricolor paraelectric/ferroelectric superlattices constitute a tunable system to investigate the concomitant effects of strains and depolarizing fields. Our studies provide a pathway to stabilize a monoclinic symmetry in ferroelectric layers, which is of particular interest for the enhancement of the piezoelectric properties.

Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

NASA Astrophysics Data System (ADS)

Pergolesi, Daniele; Roddatis, Vladimir; Fabbri, Emiliana; Schneider, Christof W.; Lippert, Thomas; Traversa, Enrico; Kilner, John A.

2015-02-01

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

Anisotropic electrical conduction in ferromagnetic-antiferromagnetic-ferromagnetic oxide trilayers

NASA Astrophysics Data System (ADS)

Padhan, P.; Prellier, W.

2007-07-01

An antiferromagnetic layer of an insulator PrMnO3 , CaMnO3 , or Pr0.5Ca0.5MnO3 has been sandwiched between two layers of ferromagnetic SrRuO3 on (001)-oriented SrTiO3 and LaAlO3 substrates using the pulsed laser deposition technique. Magnetotransport measurements reveal a change of anisotropy in the case of trilayers having a Pr0.5Ca0.5MnO3 or a CaMnO3 spacer layer as compared to that of 20unit cells thick film of SrRuO3 , while in the case of PrMnO3 spacer layer, the change of anisotropy is negligible. In addition, two switching magnetic fields are observed with the trilayer made of PrMnO3 spacer layer in the field-dependent anisotropic magnetoresistance. The results are discussed using the concept of spin-orbit coupling and spin mixing conduction process at the interfaces.

Properties of large area ErBa2Cu3O(7-x) thin films deposited by ionized cluster beams

NASA Technical Reports Server (NTRS)

Levenson, L. L.; Stan, Mark A.; Bhasin, Kul B.

1991-01-01

ErBa2Cu3O(7-x) films have been produced by simultaneous deposition of Er, Ba, and Cu from three ionized cluster beam (ICB) sources at acceleration voltages of 0.3 to 0.5 kV. Combining ozone oxidation with ICB deposition at 650 C eliminated any need of post annealing processing. The substrates were rotated at 10 rotations per minute during the deposition which took place at a rate of about 3 to 4 nm. Films with areas up to 70 mm in diameter have been made by ICB deposition. These films, 100 nm thick, were deposited on SrTiO3 (100) substrates at 650 C in a mixture of six percent O3 in O2 at a total pressure of 4 x 10(exp -4) Torr. They had T(sub c) ranging from 84.3 K to 86.8 K over a 70 mm diameter and J(sub c) above 10(exp 6) A/sq cm at 77 K. X ray diffraction measurements of the three samples showed preferential c-axis orientation normal to the substrate surface. Scanning electron micrographs (SEM) of the three samples also show some texture dependence on sample position. For the three samples, there is a correlation between SEM texture, full width at half-maximum of rocking curves and J(sub c) versus temperature curves.

Structural differences between superconducting and non-superconducting CaCuO2/SrTiO3 interfaces

NASA Astrophysics Data System (ADS)

Zarotti, Francesca; Di Castro, Daniele; Felici, Roberto; Balestrino, Giuseppe

2018-06-01

A study of the interface structure of superconducting and non-superconducting CaCuO2/SrTiO3 heterostructures grown on NdGaO3(110) substrates is reported. Using the combination of high resolution x-ray reflectivity and surface diffraction, the crystallographic structure of superconducting and non-superconducting samples has been investigated. The analysis has demonstrated the excellent sharpness of the CaCuO2/SrTiO3 interface (roughness smaller than one perovskite unit cell). Furthermore, we were able to discriminate between the superconducting and the non-superconducting phase. In the former case, we found an increase of the spacing between the topmost Ca plane of CaCuO2 block and the first TiO2 plane of the overlaying STO block, relative to the non-superconducting case. These results are in agreement with the model that foresees a strong oxygen incorporation in the interface Ca plane in the superconducting heterostructures.

Strain dependence of the electronic properties of LaTiO3 thin films

NASA Astrophysics Data System (ADS)

Moon, S. J.; Kim, Y. S.

2014-11-01

We report on the transport and the core-level X-ray photoemission spectroscopy data of fully-strained LaTiO3 thin films grown on GdScO3 and SrTiO3 substrates. We observed that LaTiO3 thin film grown on GdScO3 showed insulating behavior but that grown on SrTiO3 exhibited a metallic character. We found that while the La 4 d photoemission spectra of the two films were nearly the same, their Ti 2 p and O 1 s data revealed a difference. Our results suggest that strain-induced changes in the Ti-O bonding play an important role in the electronic properties of LaTiO3 thin films.

Low Fatigue in Epitaxial Pb(Zr0.2Ti0.8)O3 on Si Substrates with LaNiO3 Electrodes by RF Sputtering

NASA Astrophysics Data System (ADS)

Wang, Chun; Kryder, Mark H.

2009-09-01

Epitaxial PZT (001) thin films with a LaNiO3 bottom electrode were deposited by radio-frequency (RF) sputtering onto Si(001) single-crystal substrates with SrTiO3/TiN buffer layers. Pb(Zr0.2Ti0.8)O3 (PZT) samples were shown to consist of a single perovskite phase and to have an (001) orientation. The orientation relationship was determined to be PZT(001)[110]∥LaNiO3(001)[110]∥SrTiO3 (001)[110]∥TiN(001)[110]∥Si(001)[110]. Atomic force microscope (AFM) measurements showed the PZT films to have smooth surfaces with a roughness of 1.15 nm. The microstructure of the multilayer was studied using transmission electron microscopy (TEM). Electrical measurements were conducted using both Pt and LaNiO3 as top electrodes. The measured remanent polarization P r and coercive field E c of the PZT thin film with Pt top electrodes were 23 μC/cm2 and 75 kV/cm, and were 25 μC/cm2 and 60 kV/cm for the PZT film with LaNiO3 top electrodes. No obvious fatigue after 1010 switching cycles indicated good electrical endurance of the PZT films using LaNiO3 electrodes, compared with the PZT film with Pt top electrodes showing a significant polarization loss after 108 cycles. These PZT films with LaNiO3 electrodes could be potential recording media for probe-based high-density data storage.

Enhanced Piezoelectric Response in HybridPerovskite via Interfacing with Ferroelectric Pb(Zr,Ti)O3

NASA Astrophysics Data System (ADS)

Song, Jingfeng; Xiao, Zhiyong; Chen, Bo; Prockish, Spencer; Chen, Xuegang; Wang, Dong; Huang, Jinsong; Hong, Xia

In this work, we have carried out a comprehensive study of the piezoelectric properties of polycrystalline hybrid perovskite CH3NH3PbI3 (MAPbI3) thin films on two types of substrates. We spin coated 20-100 nm MAPbI3 thin films on gold and ferroelectric Pb(Zr,Ti)O3 (PZT), and characterized their piezoelectric coefficient d33 using piezoresponse force microscopy (PFM). The MAPbI3 thin films on gold showed a d33 of 0.4 pm/V. The epitaxial PZT films ( 50 nm) were deposited on (La,Sr)MnO3/SrTiO3 substrates, with polarization uniformly oriented in the up direction. For MAPbI3 films on PZT, there are regions showing clear PFM phase response, suggesting that MAPbI3 is polar with out-of-plane polarization. The PFM amplitude image of MAPbI3 indicated the existence of both constructive and destructive piezoresponse with that of PZT. The extracted d33is4 pm/V, 10-fold higher than that on gold. The enhanced piezoresponse is attributed to the dipole-dipole interaction between MAPbI3 and PZT. Our study points to an effective route to engineer the piezoelectric properties MAPbI3 for applications such as mechanical actuators and energy harvesting.

Electrical transport across nanometric SrTiO3 and BaTiO3 barriers in conducting/insulator/conducting junctions

NASA Astrophysics Data System (ADS)

Navarro, H.; Sirena, M.; González Sutter, J.; Troiani, H. E.; del Corro, P. G.; Granell, P.; Golmar, F.; Haberkorn, N.

2018-01-01

We report the electrical transport properties of conducting/insulator/conducting heterostructures by studying current-voltage IV curves at room temperature. The measurements were obtained on tunnel junctions with different areas (900, 400 and 100 μm2) using a conducting atomic force microscope. Trilayers with GdBa2Cu3O7 (GBCO) as the bottom electrode, SrTiO3 or BaTiO3 (thicknesses between 1.6 and 4 nm) as the insulator barrier, and GBCO or Nb as the top electrode were grown by DC sputtering on (100) SrTiO3 substrates For SrTiO3 and BaTiO3 barriers, asymmetric IV curves at positive and negative polarization can be obtained using electrodes with different work function. In addition, hysteretic IV curves are obtained for BaTiO3 barriers, which can be ascribed to a combined effect of the FE reversal switching polarization and an oxygen vacancy migration. For GBCO/BaTiO3/GBCO heterostructures, the IV curves correspond to that expected for asymmetric interfaces, which indicates that the disorder affects differently the properties at the bottom and top interfaces. Our results show the role of the interface disorder on the electrical transport of conducting/insulator/conduction heterostructures, which is relevant for different applications, going from resistive switching memories (at room temperature) to Josephson junctions (at low temperatures).

Kondo effect with tunable spin-orbit interaction in LaTiO3/CeTiO3/SrTiO3 heterostructure.

PubMed

Ghising, Pramod; Das, Debarchan; Das, Shubhankar; Hossain, Z

2018-07-18

We have fabricated epitaxial films of CeTiO 3 (CTO) on (0 0 1) oriented SrTiO 3 (STO) substrates, which exhibit highly insulating and diamagnetic properties. X-ray photoelectron spectroscopy was used to establish the 3+  valence state of the Ce and Ti ions. Furthermore, we have also fabricated δ (CTO) doped LaTiO 3 (LTO)/SrTiO 3 thin films which exhibit variety of interesting properties including Kondo effect and spin-orbit interaction (SOI) at low temperatures. The SOI shows a non-monotonic behaviour as the thickness of the CTO layer is increased and is reflected in the value of characteristic SOI field ([Formula: see text]) obtained from weak anti-localization fitting. The maximum value of [Formula: see text] is 1.00 T for δ layer thickness of 6 u.c. This non-monotonic behaviour of SOI is attributed to the strong screening of the confining potential at the interface. The screening effect is enhanced by the CTO layer thickness and the dielectric constant of STO which increases at low temperatures. Due to the strong screening, electrons confined at the interface are spread deeper into the STO bulk where it starts to populate the Ti [Formula: see text] subbands; consequently the Fermi level crosses over from [Formula: see text] to the [Formula: see text] subbands. At the crossover region of [Formula: see text] where there is orbital mixing, SOI goes through a maximum.

Rapid Synthesis and Formation Mechanism of Core-Shell-Structured La-Doped SrTiO3 with a Nb-Doped Shell

PubMed Central

Park, Nam-Hee; Akamatsu, Takafumi; Itoh, Toshio; Izu, Noriya; Shin, Woosuck

2015-01-01

To provide a convenient and practical synthesis process for metal ion doping on the surface of nanoparticles in an assembled nanostructure, core-shell-structured La-doped SrTiO3 nanocubes with a Nb-doped surface layer were synthesized via a rapid synthesis combining a rapid sol-precipitation and hydrothermal process. The La-doped SrTiO3 nanocubes were formed at room temperature by a rapid dissolution of NaOH pellets during the rapid sol-precipitation process, and the Nb-doped surface (shell) along with Nb-rich edges formed on the core nanocubes via the hydrothermal process. The formation mechanism of the core-shell-structured nanocubes and their shape evolution as a function of the Nb doping level were investigated. The synthesized core-shell-structured nanocubes could be arranged face-to-face on a SiO2/Si substrate by a slow evaporation process, and this nanostructured 10 μm thick thin film showed a smooth surface. PMID:28793420

Absence of giant spin splitting in the two-dimensional electron liquid at the surface of SrTiO3 (001)

NASA Astrophysics Data System (ADS)

McKeown Walker, S.; Riccò, S.; Bruno, F. Y.; de la Torre, A.; Tamai, A.; Golias, E.; Varykhalov, A.; Marchenko, D.; Hoesch, M.; Bahramy, M. S.; King, P. D. C.; Sánchez-Barriga, J.; Baumberger, F.

2016-06-01

We reinvestigate the putative giant spin splitting at the surface of SrTiO3 reported by Santander-Syro et al. [Nat. Mater. 13, 1085 (2014), 10.1038/nmat4107]. Our spin- and angle-resolved photoemission experiments on fractured (001) oriented surfaces supporting a two-dimensional electron liquid with high carrier density show no detectable spin polarization in the photocurrent. We demonstrate that this result excludes a giant spin splitting while it is consistent with the unconventional Rashba-like splitting seen in band structure calculations that reproduce the experimentally observed ladder of quantum confined subbands.

Magnetic anisotropy and transport properties of 70 nm SrRuO3 films grown on different substrates

NASA Astrophysics Data System (ADS)

Wang, X. W.; Zhang, Y. Q.; Meng, H.; Wang, Z. J.; Li, D.; Zhang, Z. D.

2011-04-01

Magnetic and transport properties of 70 nm SrRuO3 films grown on (001) SrTiO3, (001) LaAlO3 and (001) MgO have been investigated. A perpendicular magnetic anisotropy is observed in compressive strained films grown on SrTiO3. A weaker perpendicular magnetic anisotropy and a weak in-plane magnetic anisotropy are found in strain-free films grown on MgO and LAO, respectively, possibly due to different growth mechanisms. In addition, metallic behavior is observed in all the as-grown films and the resistivity of the film grown on MgO is lowest (230 μΩ cm at 300 K), which is close to that of bulk single crystal SrRuO3 (about 195 μΩ cm). The relation between structure and properties indicates that the magnetic anisotropy, as well as the magnitude of resistivity of SrRuO3 films, can be effectively tailored by taking advantage of different strains and growth mechanisms induced by growth on different substrates.

Interfacial B-site atomic configuration in polar (111) and non-polar (001) SrIrO3/SrTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Anderson, T. J.; Zhou, H.; Xie, L.; Podkaminer, J. P.; Patzner, J. J.; Ryu, S.; Pan, X. Q.; Eom, C. B.

2017-09-01

The precise control of interfacial atomic arrangement in ABO3 perovskite heterostructures is paramount, particularly in cases where the subsequent electronic properties of the material exhibit geometrical preferences along polar crystallographic directions that feature inevitably complex surface reconstructions. Here, we present the B-site interfacial structure in polar (111) and non-polar (001) SrIrO3/SrTiO3 interfaces. The heterostructures were examined using scanning transmission electron microscopy and synchrotron-based coherent Bragg rod analysis. Our results reveal the preference of B-site intermixing across the (111) interface due to the polarity-compensated SrTiO3 substrate surface prior to growth. By comparison, the intermixing at the non-polar (001) interface is negligible. This finding suggests that the intermixing may be necessary to mitigate epitaxy along heavily reconstructed and non-stoichiometric (111) perovskite surfaces. Furthermore, this preferential B-site configuration could allow the geometric design of the interfacial perovskite structure and chemistry to selectively engineer the correlated electronic states of the B-site d-orbital.

Variation in superconducting transition temperature due to tetragonal domains in two-dimensionally doped SrTiO 3

DOE PAGES

Noad, Hilary; Spanton, Eric M.; Nowack, Katja C.; ...

2016-11-28

Strontium titanate is a low-temperature, non–Bardeen-Cooper-Schrieffer superconductor that superconducts to carrier concentrations lower than in any other system and exhibits avoided ferroelectricity at low temperatures. Neither the mechanism of superconductivity in strontium titanate nor the importance of the structure and dielectric properties for the superconductivity are well understood. We studied the effects of twin structure on superconductivity in a 5.5-nm-thick layer of niobium-doped SrTiO 3 embedded in undoped SrTiO 3. We used a scanning superconducting quantum interference device susceptometer to image the local diamagnetic response of the sample as a function of temperature. We observed regions that exhibited a superconductingmore » transition temperature T c ≳ 10% higher than the temperature at which the sample was fully superconducting. The pattern of these regions varied spatially in a manner characteristic of structural twin domains. Some regions are too wide to originate on twin boundaries; therefore, we propose that the orientation of the tetragonal unit cell with respect to the doped plane affects T c. Finally, our results suggest that the anisotropic dielectric properties of SrTiO 3 are important for its superconductivity and need to be considered in any theory of the mechanism of the superconductivity.« less

Electrical properties of thermoelectric cobalt Ca3Co4O9 epitaxial heterostructures

NASA Astrophysics Data System (ADS)

Guo, Haizhong; Wang, Shufang; Wang, Le; Jin, Kui-juan; Chen, Shanshan; Fu, Guangsheng; Ge, Chen; Lu, Huibin; Wang, Can; He, Meng; Yang, Guozhen

2013-03-01

Heterostructures fabricated from layered cobalt oxides offer substantial advantages for thermoelectric applications. C-axis-oriented Ca3Co4O9 (CCO) thin films on SrTiO3 substrates and Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunctions were fabricated by pulsed laser deposition. The measurements of in-plane resistivity, thermopower, and magnetic properties performed on the Ca3Co4O9 thin films were found to be comparable to ab-plane those of the single crystals due to good orientation of the films. The temperature dependence of the electrical transport properties of Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunction was also investigated. The junction shows two distinctive transport mechanisms at different temperature regimes under forward bias: tunneling across the Schottky barrier in the temperature range of 100-380 K, and tunneling mechanism at low bias and thermal emission mechanism at high bias between 10 and 100 K. However, for the case of low reverse bias, the trap assisted tunneling process should be considered for the leakage current. Negative magnetoresistance effect is observed at low temperatures, related to the electron spin-dependent scattering and the interface resistance of the heterostructures.

Crystal orientation, crystallinity, and thermoelectric properties of Bi0.9Sr0.1CuSeO epitaxial films grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Ishizawa, Mamoru; Fujishiro, Hiroyuki; Naito, Tomoyuki; Ito, Akihiko; Goto, Takashi

2018-02-01

We have grown Bi0.9Sr0.1CuSeO epitaxial thin films on MgO and SrTiO3 (STO) single-crystal substrates by pulsed laser deposition (PLD) under various growth conditions, and investigated the crystal orientation, crystallinity, chemical composition, and thermoelectric properties of the films. The optimization of the growth conditions was realized in the film grown on MgO at the temperature T s = 573 K and Ar pressure P Ar = 0.01 Torr in this study, in which there was no misalignment apart from the c-axis and no impurity phase. It was clearly found that the higher crystal orientation of the epitaxial film grown at a higher temperature under a lower Ar pressure mainly enhanced the thermoelectric power factor P (= S 2/ρ), where S is the Seebeck coefficient and ρ is the electrical resistivity. However, the thermoelectric properties of the films were lower than those of polycrystalline bulk because of lattice distortion from lattice mismatch, a low crystallinity caused by a lower T s, and Bi and Cu deficiencies in the films.

Growth of biaxially textured template layers using ion beam assisted deposition

NASA Astrophysics Data System (ADS)

Park, Seh-Jin

A two-step IBAD (ion beam assisted deposition) method is investigated, and compared to the conventional IBAD methods. The two step method uses surface energy anisotropy to achieve uniaxial texture and ion beam irradiation for biaxial texture. The biaxial texture was achieved by selective surface etching and enhanced by grain overgrowth. In this method, biaxial texture alignment is performed on a (001) uniaxially textured buffer layer. The material selected for achieving uniaxial texture, YBCO (YBa2Cu3O7-x), has strong surface energy anisotropy. YBCO is chemically susceptible to the reaction with the adjacent layer. Yttria stabilized zirconia (YSZ) was used to prevent the reaction between YBCO and the substrates (polycrystalline Ni alloy [Hastelloy] and amorphous SiNx/Si). A SrTiO3 layer was deposited on the uniaxially textured YBCO layer to retard stoichiometry change with subsequent processing. STO is well lattice matched with YBCO. A top layer of Ni was then deposited. The Ni layer was used for studying the effect of grain overgrowth. The obtained uniaxial Ni films were used for subsequent ion beam processing. Ar ion beam irradiation onto the uniaxially textured Ni film was used to study the effect of selective grain etching in achieving in-plane aligned Ni grains. Additional Ni deposition induces the overgrowth of the in-plane aligned Ni grains and, finally, the overall in-plane alignment. The in-plane alignment is examined with XRD phi scan. The effect of surface polarity of insulating oxide substrates on the epitaxial growth behavior was investigated. The lattice strain energy was the most important factor for determining the orientation of Ni films on a non-polar surface. However, for a polar surface, the surface energy plays an important role in determining the final orientation of the Ni films based on the experimental and theoretical results. Y2O3 growth behavior was also studied. The lattice strain energy is the most important factor for Y2O3 growth on single crystalline substrates. The surface energy anisotropy is the most important factor for the growth on amorphous substrates. The XRD phi scan study shows that Ar ion beam irradiation with favorable angle of incidence enhances the in-plane alignment of Y2O3 films grown on randomly oriented substrates due to the ion channeling.

Ferromagnetic-Antiferromagnetic Coupling by Distortion of Fe/Mn Oxygen Octahedrons in (BiFeO3 )m (La0.7 Sr0.3 MnO3 )n Superlattices.

PubMed

Xiong, Jie; Lei, Tianyu; Chu, Junwei; Yang, Chao; Wei, Jiake; Zhuo, Mujin; Choi, Eun-Mi; Tao, Bowan; Zhang, Wanli; Wang, Yongqiang; Li, Yanrong

2017-05-01

Interface enhanced magnetism attracts much attention due to its potential use in exploring novel structure devices. Nevertheless, the magnetic behavior at interfaces has not been quantitatively determined. In this study, abnormal magnetic moment reduction is observed in La 0.7 Sr 0.3 MnO 3 (LSMO)/BiFeO 3 (BFO) superlattices, which is induced by ferromagnetic (FM)/antiferromagnetic (AFM) coupling in the interface. With reduced repetition of the superlattice's unit cell [(LSMO) n /(BFO) n ] 60/ n (n = 1, 2, 5, 10) on a SrTiO 3 substrate, magnetic moment reduction from 25.5 emu cc -1 ([(LSMO) 10 /(BFO) 10 ] 6 ) to 1.5 emu cc -1 ([(LSMO) 1 /(BFO) 1 ] 60 ) is obtained. Ab initio simulations show that due to the different magnetic domain formation energies, the magnetic moment orientation tends to be paramagnetic in the FM/AFM interface. The work focuses on the magnetic domain formation energy and provides a pathway to construct artificial heterostructures that can be an effective way to tune the magnetic moment orientation and control the magnetization of ultrathin films. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microwave properties and characterization of co-evaporated BSCCO thin films

NASA Technical Reports Server (NTRS)

Miranda, F. A.; Chorey, C. M.; Stan, M. A.; Nordgren, C. E.; Kwor, R. Y.; Kalkur, T. S.

1993-01-01

An extensive characterization of Bi-Sr-Ca-Cu-O (BSCCO) thin films deposited by co-evaporation on LaAlO3 and SrTiO3 substrates was performed. The films had a T(sub c) (R = O) of approximately 78 K, and were predominantly c-axis oriented, with critical current densities (J(sub c)) at 4.5 K of 1.6 x 10(exp 6) and 1.1 x 10(exp 6) A cm(sup -2), for the samples on SrTiO3 and LaAlO3, respectively. The microwave properties of the films were examined by three techniques. The complex conductivity sigma(sub *) = sigma(sub 1) - j(sigma(sub 2)) and the magnetic penetration depth (A) were measured by power transmission at 30.6 GHz; the surface resistance (R(sub s)) was measured using a cavity resonator at 58.9 GHz, and the transmission line losses were determined by measuring the quality factor (Q) of a linear microstrip resonator at 10.4 and 20.2 GHz. The complex conductivity for the film on LaAlO3 was determined to be (2.0-j10) x 10(exp 5) S/m at 77 K. It was observed that in the superconducting state sigma(sub 1) deviates from both the Bardeen-Cooper-Schrieffer (BCS) theory and the two-fluid model. Values of lambda were found to be approximately 2.0 and 1.1 microns at 77 K and 20 K respectively, and were obtained for the film on LaAlO3. The value of lambda at 20 K was approximately three times larger than that of BSCCO single crystals. R(sub s) values of 865 and 1391 mOmega were obtained for the films on SrTiO3 and LaAlO3, respectively, at 77 K and 58.9 GHz. Unloaded Q factors at 20 K of approximately 1100 and 800 at 10.4 and 20.2 GHz respectively, were measured for the BSCCO resonator. Unloaded Q values of 290 and 405 at 20 K were obtained at 10.4 GHz and 20.2 GHz respectively, for an all gold (Au) resonator.

Thin films of the Bi2Sr2Ca2Cu3O(x) superconductor

NASA Technical Reports Server (NTRS)

Mei, YU; Luo, H. L.; Hu, Roger

1990-01-01

Using RF sputtering technique, thin films of near single phase Bi2Sr2Ca2Cu3O(x) were successfully prepared on SrTiO3(100), MgO(100), and LaAlO3(012) substrates. Zero resistance of these films occurred in the range of 90-105 K.

Epitaxial thin films of Dirac semimetal antiperovskite Cu3PdN

NASA Astrophysics Data System (ADS)

Quintela, C. X.; Campbell, N.; Shao, D. F.; Irwin, J.; Harris, D. T.; Xie, L.; Anderson, T. J.; Reiser, N.; Pan, X. Q.; Tsymbal, E. Y.; Rzchowski, M. S.; Eom, C. B.

2017-09-01

The growth and study of materials showing novel topological states of matter is one of the frontiers in condensed matter physics. Among this class of materials, the nitride antiperovskite Cu3PdN has been proposed as a new three-dimensional Dirac semimetal. However, the experimental realization of Cu3PdN and the consequent study of its electronic properties have been hindered due to the difficulty of synthesizing this material. In this study, we report fabrication and both structural and transport characterization of epitaxial Cu3PdN thin films grown on (001)-oriented SrTiO3 substrates by reactive magnetron sputtering and post-annealed in NH3 atmosphere. The structural properties of the films, investigated by x-ray diffraction and scanning transmission electron microscopy, establish single phase Cu3PdN exhibiting cube-on-cube epitaxy (001)[100]Cu3PdN||(001)[100]SrTiO3. Electrical transport measurements of as-grown samples show metallic conduction with a small temperature coefficient of the resistivity of 1.5 × 10-4 K-1 and a positive Hall coefficient. Post-annealing in NH3 results in the reduction of the electrical resistivity accompanied by the Hall coefficient sign reversal. Using a combination of chemical composition analyses and ab initio band structure calculations, we discuss the interplay between nitrogen stoichiometry and magneto-transport results in the framework of the electronic band structure of Cu3PdN. Our successful growth of thin films of antiperovskite Cu3PdN opens the path to further investigate its physical properties and their dependence on dimensionality, strain engineering, and doping.

Ab initio study of cross-interface electron-phonon couplings in FeSe thin films on SrTiO 3 and BaTiO 3

DOE PAGES

Wang, Y.; Linscheid, A.; Berlijn, T.; ...

2016-04-22

We study the electron-phonon coupling strength near the interface of monolayer and bilayer FeSe thin films on SrTiO 3 , BaTiO 3 , and oxygen-vacant SrTiO 3 substrates, using ab initio methods. The calculated total electron-phonon coupling strength λ = 0.2 – 0.3 cannot account for the high T c ~ 70 K observed in these systems through the conventional phonon-mediated pairing mechanism. In all of these systems, however, we find that the coupling constant of a polar oxygen branch peaks at q = 0 with negligible coupling elsewhere, while the energy of this mode coincides with the offset energymore » of the replica bands measured recently by angle-resolved photoemission spectroscopy experiments. However, the integrated coupling strength for this mode from our current calculations is still too small to produce the observed high T c , even through the more efficient pairing mechanism provided by the forward scattering. Also, we arrive at the same qualitative conclusion when considering a checkerboard antiferromagnetic configuration in the Fe layer. In light of the experimental observations of the replica band feature and the relatively high T c of FeSe monolayers on polar substrates, our results point towards a cooperative role for the electron-phonon interaction, where the cross-interface interaction acts in conjunction with a purely electronic interaction. Finally, we discuss a few scenarios where the coupling strength obtained here may be enhanced.« less

Engineering Electronic Properties of Strongly Correlated Metal Thin Films

NASA Astrophysics Data System (ADS)

Eaton, Craig

This dissertation reports on advances in synthesis and characterization of high quality perovskite metals with strong electron correlation. These materials have attracted considerable attention for their potential application as an active electronic material in logic applications utilizing the Mott type metal-to-insulator transition. CaVO3 and SrVO3 correlated metal oxide films have been grown by hybrid-molecular beam epitaxy (MBE), where alkaline earth cations are supplied using a conventional effusion cell and the transition metal vanadium is supplied using the metal-organic precursor vanadium (V) oxytriisopropoxide. Oxygen is available in both molecular and remote plasma activated forms. Titanate-based band insulators, namely SrTiO3 and CaTiO3, have also been grown using titanium tetra-isopropoxide as metal-organic precursor. The grown films have been characterized using reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM), transition electron microscopy (TEM), and electrical properties have been determined using temperature dependent resistivity and Hall measurements. Optimized films exhibit high quality Kiessig fringes, with substrate limited rocking curve widths of 8 arc seconds in the case of CaVO3 and 17 arc seconds in the case of SrVO3. Both vanadate films grew in a step-flow mode with atomic steps visible after growth by AFM. In SrVO3, the perovskite phase remained present with a gradual lattice expansion away from the optimal cation flux ratio. For CaVO3, the films remained phase pure and with little change in lattice parameter throughout a growth window that spanned a 30% range in cation flux ratios. While an abrupt increase of lattice parameter was found for CaVO3 films grown under Carich conditions, films grown under V-rich conditions revealed a gradual reduction in lattice parameter, in contrast to SrVO3 where all defects have been shown to increase unit cell volume. Low resistivity and high residual resistivity ration complex vanadate thin films have been demonstrated. Methods for growing minimally strained SrVO3 films on (LaAlO 3)0.3(Sr2AlTaO6)0.7 substrates (0.7% tensile) were expanded to other substrates with different lattice mismatches, namely SrTiO3 (1.8% tensile) and LaAlO3 (1.3% compressive). Varying strain modifies bond angles or overlap, and can give rise to an insulating ground state. Changes in the film surface morphology derived from atomic force microscopy (AFM) was used to discriminate optimal growth conditions on each substrate. Films grown at each strain state remain strongly metallic at 10 nm thickness. Low temperature resistivity measurements, which demonstrates a marked increase in low temperature resistivity with respect to those films grown at optimized growth parameters, were found to be substrate dependent. The thickness of films grown on SrTiO3 are optimized for maximum thickness without cracking. Use of epitaxial strain as a mechanism for enabling a Mott transition was not demonstrated at strains and conditions attempted within this study. The experimental support of this hypothesis could not be experimentally confirmed within the range of strains studied here. Finally, high quality epitaxial SrTiO3-SrVO3-SrTiO 3 heterostructures are grown on (LaAlO3)0.3(Sr 2AlTaO6)0.7 substrates by hybrid MBE. RHEED, XRD, and TEM showed that these structures are of high structural quality, with atomically and chemically abrupt interfaces. By fixing the thickness of the SrTiO3 confinement layers to be 15 nm and decreasing the thickness of the SrVO3 from 50 nm down to 1.2 nm, it has been demonstrated that the system transitions from a strongly-correlated metal to an insulating state, as shown by temperature dependent resistivity and carrier concentration measurements. For films with thickness larger than 1.2 nm, the resistivity versus temperature is described by Fermi liquid behavior. Below this critical thickness the material undergoes an electronic phase transition into a variable-range hopping insulating phase. The results of this dissertation show that high quality vanadate thin films can be grown by hybrid MBE. Their electronic ground state, metallic in the bulk phase, can be effectively changed using geometrical confinement, while epitaxial strain was found to have a negligible effect. The ability to grow CaVO3 in a self-regulated fashion holds promise that the favorable growth kinetics in hybrid MBE might be a general characteristic of the metalorganic precursor employed.

DFT+DMFT study of strain and interface effects in d1 and d2 t2 g-perovskites

NASA Astrophysics Data System (ADS)

Sclauzero, Gabriele; Dymkowski, Krzysztof; Ederer, Claude

2015-03-01

Metal-insulator transitions in thin films of early-transition metal correlated oxides are linked to both epitaxial strain and electronic reconstruction at the film/substrate interface. We separately address these two key factors for LaTiO3 and LaVO3 through density functional theory plus dynamical mean-field theory (DFT+DMFT). We find that mere epitaxial strain suffices to induce an insulator-to-metal transition in LaTiO3, but not in LaVO3, in agreement with recent experiments. We show that this difference can be explained by the combined effect of strain-induced changes in the crystal field splitting of t2 g orbitals and different orbital filling in these two materials. The role of the interface is investigated through DFT+DMFT simulations of LaVO3/SrTiO3 heterostructures with varying superlattice periodicities and substrate terminations. Our aim is to assess whether the metallicity observed at the LaVO3/SrTiO3 interface could be driven by pure electronic reconstruction effects, rather than structural or stoichiometric reasons (such as, e.g., O-related defects).

What makes the T c of monolayer FeSe on SrTiO 3 so high: a sign-problem-free quantum Monte Carlo study

DOE PAGES

Li, Zi-Xiang; Wang, Fa; Yao, Hong; ...

2016-04-30

Monolayer FeSe films grown on SrTiO 3 (STO) substrate show superconducting gap-opening temperatures (T c) which are almost an order of magnitude higher than those of the bulk FeSe and are highest among all known Fe-based superconductors. Angle-resolved photoemission spectroscopy observed “replica bands” suggesting the importance of the interaction between FeSe electrons and STO phonons. These facts rejuvenated the quest for T c enhancement mechanisms in iron-based, especially iron-chalcogenide, superconductors. Here, we perform the first numerically-exact sign-problem-free quantum Monte Carlo simulations to iron-based superconductors. We (1) study the electronic pairing mechanism intrinsic to heavily electron doped FeSe films, and (2)more » examine the effects of electron–phonon interaction between FeSe and STO as well as nematic fluctuations on T c. Armed with these results, we return to the question “what makes the T c of monolayer FeSe on SrTiO 3 so high?” in the conclusion and discussions.« less

Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO 3 hybrids

NASA Astrophysics Data System (ADS)

Shang, T.; Zhan, Q. F.; Yang, H. L.; Zuo, Z. H.; Xie, Y. L.; Zhang, Y.; Liu, L. P.; Wang, B. M.; Wu, Y. H.; Zhang, S.; Li, Run-Wei

2015-10-01

We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO3 (LCO) ferromagnetic insulator films. The LaCoO3 films were deposited on several single crystalline substrates [LaAlO3,(La,Sr)(Al,Ta)O3, and SrTiO3] with (001) orientation. The physical properties of LaCoO3 films were characterized by the measurements of magnetic and transport properties. The LaCoO3 films undergo a paramagnetic to ferromagnetic (FM) transition at Curie temperatures ranging from 40 to 85 K, below which the Pt/LCO hybrids exhibit significant extraordinary Hall resistance up to 50 m Ω and unconventional magnetoresistance ratio Δ ρ /ρ0 about 1.2 ×10-4 , accompanied by the conventional magnetoresistance. The observed spin transport properties share some common features as well as some unique characteristics when compared with well-studied Y3Fe5O12 -based Pt thin films. Our findings call for new theories since the extraordinary Hall resistance and magnetoresistance cannot be consistently explained by the existing theories.

Antiferromagnetic Order in Epitaxial FeSe Films on SrTiO3

NASA Astrophysics Data System (ADS)

Zhou, Y.; Miao, L.; Wang, P.; Zhu, F. F.; Jiang, W. X.; Jiang, S. W.; Zhang, Y.; Lei, B.; Chen, X. H.; Ding, H. F.; Zheng, Hao; Zhang, W. T.; Jia, Jin-feng; Qian, Dong; Wu, D.

2018-03-01

Single monolayer FeSe film grown on a Nb-doped SrTiO3 (001 ) substrate shows the highest superconducting transition temperature (TC˜100 K ) among the iron-based superconductors (iron pnictides), while the TC value of bulk FeSe is only ˜8 K . Although bulk FeSe does not show antiferromagnetic order, calculations suggest that the parent FeSe /SrTi O3 films are antiferromagnetic. Experimentally, because of a lack of a direct probe, the magnetic state of FeSe /SrTi O3 films remains mysterious. Here, we report direct evidence of antiferromagnetic order in the parent FeSe /SrTi O3 films by the magnetic exchange bias effect measurements. The magnetic blocking temperature is ˜140 K for a single monolayer film. The antiferromagnetic order disappears after electron doping.

Multiple relaxations of the cluster surface diffusion in a homoepitaxial SrTiO3 layer

NASA Astrophysics Data System (ADS)

Woo, Chang-Su; Chu, Kanghyun; Song, Jong-Hyun; Yang, Chan-Ho

2018-03-01

We examine the surface diffusion process of adatomic clusters on a (001)-oriented SrTiO3 single crystal using reflection high energy electron diffraction (RHEED). We find that the recovery curve of the RHEED intensity acquired after a homoepitaxial half-layer growth can be accurately fit into a double exponential function, indicating the existence of two dominant relaxation mechanisms. The characteristic relaxation times at selected growth temperatures are investigated to determine the diffusion activation barriers of 0.67 eV and 0.91 eV, respectively. The Monte Carlo simulation of the cluster hopping model suggests that the decrease in the number of dimeric and trimeric clusters during surface diffusion is the origin of the observed relaxation phenomena.

Strain localization in thin films of Bi(Fe,Mn)O 3 due to the formation of stepped Mn 4+-rich antiphase boundaries

DOE PAGES

MacLaren, I.; Sala, B.; Andersson, S. M. L.; ...

2015-10-17

Here, the atomic structure and chemistry of thin films of Bi(Fe,Mn)O 3 (BFMO) films with a target composition of Bi 2FeMnO 6 on SrTiO 3 are studied using scanning transmission electron microscopy imaging and electron energy loss spectroscopy. It is shown that Mn4+-rich antiphase boundaries are locally nucleated right at the film substrate and then form stepped structures that are approximately pyramidal in three dimensions. These have the effect of confining the material below the pyramids in a highly strained state with an out-of-plane lattice parameter close to 4.1 Å. Outside the area enclosed by the antiphase boundaries, the out-of-planemore » lattice parameter is much closer to bulk values for BFMO. This suggests that to improve the crystallographic perfection of the films whilst retaining the strain state through as much of the film as possible, ways need to be found to prevent nucleation of the antiphase boundaries. Since the antiphase boundaries seem to form from the interaction of Mn with the Ti in the substrate, one route to perform this would be to grow a thin buffer layer of pure BiFeO 3 on the SrTiO 3 substrate to minimise any Mn-Ti interactions.« less

Interfacial magnetism in CaRuO3/CaMnO3 superlattices grown on (001) SrTiO3

NASA Astrophysics Data System (ADS)

He, C.; Zhai, X.; Mehta, V. V.; Wong, F. J.; Suzuki, Y.

2011-04-01

We have studied epitaxially grown superlattices of CaRuO3/CaMnO3 as well as an alloy film of CaMn0.5Ru0.5O3 on (001) SrTiO3 substrates. In contrast to previous experiments, we have studied CRO/CMO superlattices with a constant CRO thickness and variable CMO thickness. All superlattices exhibit Curie temperatures (TC) of 110 K. The saturated magnetization per interfacial Mn cation has been found to be 1.1 μB/Mn ion. The TC's of the superlattices are much lower than the TC of the alloy film while the saturated magnetization values are larger than that of the alloy film. These observations suggest that interdiffusion alone cannot account for ferromagnetism in the superlattices and that double exchange induced FM must play a role at the interfaces.

Enhancement of spin-lattice coupling in nanoengineered oxide films and heterostructures by laser MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xi, Xiaoxing

The objective of the proposed research is to investigate nanoengineered oxide films and multilayer structures that are predicted to show desirable properties. The main focus of the project is an atomic layer-by-layer laser MBE (ALL-Laser MBE ) technique that is superior to the conventional laser MBE in broadening the conditions for the synthesis of high quality nanoscale oxides and new designer materials. In ALL-Laser MBE, separate oxide targets are used instead of one compound target in the conventional laser MBE. The targets are switched back and forth in front of a UV laser beam as they are alternately ablated. Themore » oxide film is thus constructed one atomic layer at a time. The growth of each atomic layer is monitored and controlled by the reflection high energy electron diffraction (RHEED). The intensity of the diffraction spots increases or decreases depending on the chemistry of each atomic layer as well as the surface roughness. This allows us to determine whether the chemical ratio of the different elements in the films meets the desired value and whether each atomic layer is complete. ALL-Laser MBE is versatile: it works for non-polar film on non-polar substrate, polar film on polar substrate, and polar film on non-polar substrate. (In a polar material, each atomic layer is charged whereas in a non-polar material the atomic layers are charge neutral.) It allows one to push the thermodynamic boundary further in stabilizing new phases than reactive MBE and PLD, two of the most successful techniques for oxide thin films. For example, La 5Ni 4O 13, the Ruddlesden-Popper phase with n = 4, has never been reported in the literature because it needs atomic layer-by-layer growth at high oxygen pressures, not possible with other growth techniques. ALL-Laser MBE makes it possible. We have studied the interfacial 2-dimensional electron gas in the LaAlO 3/SrTiO 3 system, whose mechanism has been a subject of controversy. According to the most prevailing electronic reconstruction mechanism, a positive diverging electric potential is built up in the polar LaAlO 3 film when it is grown on a TiO 2-terminated SrTiO 3 substrate, which is non-polar. This leads to the transfer of half of an electron from the LaAlO 3 film surface to SrTiO 3 when the LaAlO 3 layer is thicker than 4 unit cells, creating a 2D electron gas at the interface with a sheet carrier density of 3.3×10 14/cm 2 for sufficiently thick LaAlO 3. A serious inconsistency with this mechanism is that the carrier densities reported experimentally are invariably lower than the expected value. The most likely reason is that the SrTiO 3 substrate is oxygen difficient due to the low oxygen pressures (< 10 mTorr) during growth, and post-growth annealing in oxygen is often used to remove the oxygen vacancies. People cannot grow the LaAlO 3 film in higher oxygen pressures - it results in insulating samples or 3D island growth. Because we grow the LaAlO 3 film one atomic layer at a time, we were able to grow conducting LaAlO 3/SrTiO 3 interfaces at a high oxygen pressure with ALL-Laser MBE, as high as 37 mTorr. The high oxygen pressure helps to prevent the possible oxygen reduction in SrTiO 3, ensure that the LaAlO 3 films are sufficiently oxygenated. Measurements of x-ray linear dichroism (XLD) and x-ray magnetic circular dichroism (XMCD) both show that the spectra of our films are similar to those of well oxygenated samples. In the LaAlO 3/SrTiO 3 interfaces grown by ALL-Laser MBE at 37 mTorr oxygen pressure, a quantitative agreement between our experimental result and the theoretical prediction was observed, which provides a strong support to the electronic reconstruction mechanism. The key differences between our result and the previous reports are the high oxygen pressure during the film growth and the high film crystallinity. The high oxygen pressure suppresses the likelihood of oxygen vacancies in SrTiO 3. Well oxygenated samples produced during film growth can avoid possible defects when sufficient oxygen is provided only after the growth by annealing. Using ALL-Laser MBE, we also synthesized high-quality singlec-rystalline CaMnO 3 films. The systematic increase of the oxygen vacancy content in CaMnO 3 as a function of applied in-plane strain is observed and confirmed experimentally using high-resolution soft x-ray XAS and hard x-ray photoemission spectroscopy (HAXPES). The relevant defect states in the densities of states are identified and the vacancy content in the films quantified using the combination of first-principles theory and core-hole multiplet calculations with holistic fitting. The strain-induced oxygen-vacancy formation and ordering are a promising avenue for designing and controlling new functionalities in complex transition-metal oxides.« less

Carrier-Controlled Ferromagnetism in SrTiO 3

DOE PAGES

Moetakef, Pouya; Williams, James R.; Ouellette, Daniel G.; ...

2012-06-27

Magnetotransport and superconducting properties are investigated for uniformly La-doped SrTiO 3 films and GdTiO 3/SrTiO 3 heterostructures, respectively. GdTiO 3/SrTiO 3 interfaces exhibit a high-density 2D electron gas on the SrTiO 3 side of the interface, while, for the SrTiO 3 films, carriers are provided by the dopant atoms. Both types of samples exhibit ferromagnetism at low temperatures, as evidenced by a hysteresis in the magnetoresistance. For the uniformly doped SrTiO 3 films, the Curie temperature is found to increase with doping and to coexist with superconductivity for carrier concentrations on the high-density side of the superconducting dome. The Curiemore » temperature of the GdTiO 3/SrTiO 3 heterostructures scales with the thickness of the SrTiO 3 quantum well. The results are used to construct a stability diagram for the ferromagnetic and superconducting phases of SrTiO 3.« less

Structural and Magnetic Properties of LaCoO3/SrTiO3 Multilayers.

PubMed

Zhang, Hongrui; Zhang, Jing; Yang, Huaiwen; Lan, Qianqian; Hong, Deshun; Wang, Shufang; Shen, Xi; Khan, Tahira; Yu, Richeng; Sun, Jirong; Shen, Baogen

2016-07-20

Structural and magnetic properties of the LaCoO3/SrTiO3 (LCO/STO) multilayers (MLs) with a fixed STO layer of 4 nm but varied LCO layer thicknesses have been systematically studied. The MLs grown on Sr0.7La0.3Al0.65Ta0.35O3 (LSAT) and SrTiO3 (STO) exhibit the in-plane lattice constant of the substrates, but those on LaAlO3 (LAO) show the in-plane lattice constant between those of the first two kinds of MLs. Compared with the LCO single layer (SL), the magnetic order of the MLs is significantly enhanced, as demonstrated by a very slow decrease, which is fast for the SL, of the Curie temperature and the saturation magnetization as the LCO layer thickness decreases. For example, clear ferromagnetic order is observed in the ML with the LCO layer of ∼1.5 nm, whereas it vanishes below ∼6 nm for the LCO SL. This result is consistent with the observation that the dark stripes, which are believed to be closely related to the magnetic order, remain clear in the MLs while they are vague in the corresponding LCO SL. The present work suggests a novel route to tune the magnetism of perovskite oxide films.

Shubnikov-de Haas Oscillations in LaTiO3/SrTiO3 Heterostructures

NASA Astrophysics Data System (ADS)

Veit, Michael; Ramshaw, Brad; Chan, Mun; Suzuki, Yuri

Emergent metallic behavior in heterostructures of the Mott insulator LaTiO3 and the band insulator SrTiO3 was observed for the first time more than a decade ago. It has often been compared to other oxide systems which have a two-dimensional Fermi surface, but there have been few studies probing the dimensionality of the metallicity in this system. We have studied the transport properties of thin films of LaTiO3 on SrTiO3 substrates. Our measurements have indicated that the entirety of the LaTiO3 film is conductive with an additional contribution near the interface. When the film thickness is on the order of 3-4 unit cells, we observe two sets of Shubnikov-de Haas oscillations - low frequency oscillations with a frequency of 2T and high frequency of 36T. We attribute the observation of these two sets of oscillations to a Rashba splitting which creates a smaller inner Fermi pocket and a larger outer Fermi pocket. These results are consistent with our measurements of in plane anisotropic magnetoresistance and a weak antilocalization correction to the magnetoconductance Further measurements on the angular dependence of the oscillations indicate that their frequency does not change, thus indicating that the Fermi surface is more three-dimensional.

Interfacial Coupling-Induced Ferromagnetic Insulator Phase in Manganite Film

DOE PAGES

Zhang, Bangmin; Wu, Lijun; Yin, Wei-Guo; ...

2016-06-08

Interfaces with subtle differences in atomic and electronic structures in perovskite ABO 3 heterostructures often yield intriguingly different properties, yet their exact roles remain elusive. Here, we report an integrated study of unusual transport, magnetic, and structural properties of Pr 0.67Sr 0.33MnO 3 film on SrTiO 3 substrate. The variations in the out-of-plane lattice constant and BO 6 octahedral rotation across the Pr 0.67Sr 0.33MnO 3/SrTiO 3 interface strongly depend on the thickness of the Pr 0.67Sr 0.33MnO 3 film. In the 12-nm film, a new interface-sensitive ferromagnetic polaronic insulator (FI') phase is formed during the cubic-to-tetragonal phase transition ofmore » SrTiO 3, apparently due to the enhanced electron–phonon interaction and atomic disorder in the film. The transport properties of the FI' phase in the 30-nm film are masked because of the reduced interfacial coupling and smaller interface-to-volume ratio. In conclusion, this work demonstrates how thickness-dependent interfacial coupling leads to the formation of a theoretically predicted ferromagnetic–polaronic insulator, as illustrated in a new phase diagram, that is otherwise ferromagnetic metal (FM) in bulk form.« less

Interfacial Coupling-Induced Ferromagnetic Insulator Phase in Manganite Film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Bangmin; Wu, Lijun; Yin, Wei-Guo

Interfaces with subtle differences in atomic and electronic structures in perovskite ABO 3 heterostructures often yield intriguingly different properties, yet their exact roles remain elusive. Here, we report an integrated study of unusual transport, magnetic, and structural properties of Pr 0.67Sr 0.33MnO 3 film on SrTiO 3 substrate. The variations in the out-of-plane lattice constant and BO 6 octahedral rotation across the Pr 0.67Sr 0.33MnO 3/SrTiO 3 interface strongly depend on the thickness of the Pr 0.67Sr 0.33MnO 3 film. In the 12-nm film, a new interface-sensitive ferromagnetic polaronic insulator (FI') phase is formed during the cubic-to-tetragonal phase transition ofmore » SrTiO 3, apparently due to the enhanced electron–phonon interaction and atomic disorder in the film. The transport properties of the FI' phase in the 30-nm film are masked because of the reduced interfacial coupling and smaller interface-to-volume ratio. In conclusion, this work demonstrates how thickness-dependent interfacial coupling leads to the formation of a theoretically predicted ferromagnetic–polaronic insulator, as illustrated in a new phase diagram, that is otherwise ferromagnetic metal (FM) in bulk form.« less

Pyroelectric property of SrTiO3/Si ferroelectric-semiconductor heterojunctions near room temperature

NASA Astrophysics Data System (ADS)

Bai, Gang; Wu, Dongmei; Xie, Qiyun; Guo, Yanyan; Li, Wei; Deng, Licheng; Liu, Zhiguo

2015-12-01

A nonlinear thermodynamic formalism is developed to calculate the pyroelectric property of epitaxial single domain SrTiO3/Si heterojunctions by taking into account the thermal expansion misfit strain at different temperatures. It has been demonstrated that the crucial role was played by the contribution associated with the structure order parameter arising from the rotations of oxygen octahedral on pyroelectricity. A dramatic decrease in the pyroelectric coefficient due to the strong coupling between the polarization and the structure order parameter is found at ferroelectric TF1-TF2 phase transition. At the same time, the thermal expansion mismatch between film and substrate is also found to provide an additional weak decrease of pyroelectricity. The analytic relationship of the out-of-plane pyroelectric coefficient and dielectric constant of ferroelectric phases by considering the thermal expansion of thin films and substrates has been determined for the first time. Our research provides another avenue for the investigation of the pyroelectric effects of ferroic thin films, especially, such as antiferroelectric and multiferroic materials having two or more order parameters.

Modulation-Doped SrTiO3/SrTi1-xZrxO3 Heterostructures

NASA Astrophysics Data System (ADS)

Kajdos, Adam Paul

Two-dimensional electron gases (2DEGs) in SrTiO3 have attracted considerable attention for exhibiting a variety of interesting physical phenomena, such as superconductivity and magnetism. So far, most of the literature has focused on interfaces between nonpolar SrTiO3 and polar perovskite oxides (e.g. LaAlO3 or rare-earth titanates), where high carrier density 2DEGs (˜3 x 1014 cm-2) are generated by polar discontinuity. Modulation doping is an alternative approach to generating a 2DEG that has been explored extensively in III-V semiconductors but has not heretofore been explored in complex oxides. This approach involves interfacing an undoped semiconductor with a doped semiconductor whose conduction band edge lies at a higher energy, which results in electrons diffusing into the undoped semiconductor transport channel, where scattering from ionized dopants is minimized. Realizing a high-mobility modulation-doped structure with a SrTiO3 transport channel therefore requires both the optimization of the transport channel by minimizing native defects as well as the development of a perovskite oxide which has a suitable band offset with SrTiO3 and can be electron-doped. The growth of high electron mobility SrTiO3 as a suitable transport channel material was previously demonstrated using the hybrid molecular beam epitaxy (MBE) approach, where Sr is delivered via a solid source and Ti is delivered using a metal-organic precursor, titanium (IV) tetra-isopropoxide (TTIP). Expanding on this, in-situ reflection high-energy electron diffraction (RHEED) is used to track the surface and resulting film cation stoichiometry of homoepitaxial SrTiO3 (001) thin films grown by hybrid MBE. It is shown that films with lattice parameters identical to bulk single-crystal substrates within the detection limit of high-resolution X-ray diffraction (XRD) measurements exhibit an evolution in surface reconstruction with increasing TTIP beam-equivalent pressure. The change in the observed surface reconstruction from (1x1) to (2x1) to c(4x4) is correlated with a change from mixed SrO/TiO2 to pure TiO2 surface termination. It is argued that optimal cation stoichiometry is achieved for growth conditions within the XRD-defined growth window that result in a c(4x4) surface lattice. The development of a doped perovskite oxide semiconductor with a suitable conduction band offset is then discussed as the next necessary step towards realizing modulation-doped heterostructures. The SrTixZr1-x O3 solid solution is investigated for this purpose, with a focus on optimizing cation stoichiometry to allow for controlled doping. In particular, the hybrid MBE growth of SrTixZr1-xO3 thin films is explored using a metal-organic precursor for Zr, zirconium tert-butoxide (ZTB). The successful generation of 2DEGs by modulation doping of SrTiO3 is then demonstrated in SrTiO3/La:SrTi0.95Zr0.05O 3 heterostructures, and the electronic structure is studied by Shubnikov-de Haas analysis using multiple-subband models.

The influence of A-site rare-earth for barium substitution on the chemical structure and ferroelectric properties of BZT thin films

NASA Astrophysics Data System (ADS)

Ostos, C.; Martínez-Sarrión, M. L.; Mestres, L.; Delgado, E.; Prieto, P.

2009-10-01

Rare-earth ( RE) doped Ba(Zr,Ti)O 3 (BZT) thin films were prepared by rf-magnetron sputtering from a Ba 0.90Ln0.067Zr 0.09Ti 0.91O 3 ( Ln=La, Nd) target. The films were deposited at a substrate temperature of 600 °C in a high oxygen pressure atmosphere. X-ray diffraction (XRD) patterns of RE-BZT films revealed a <001> epitaxial crystal growth on Nb-doped SrTiO 3, <001> and <011> growth on single-crystal Si, and a <111>-preferred orientation on Pt-coated Si substrates. Scanning electron microscopy (SEM) showed uniform growth of the films deposited, along with the presence of crystals of about half-micron size on the film's surface. Transmission electron microscopy (TEM) evidenced high crystalline films with thicknesses of about 100 nm for 30 min of sputtering. Electron-probe microanalysis (EPMA) corroborated the growth rate (3.0-3.5 nm/min) of films deposited on Pt-coated Si substrates. X-ray photoelectron spectroscopy (XPS), in depth profile mode, showed variations in photoelectron Ti 2 p doublet positions at lower energies with spin-orbital distances characteristic of BaTiO 3-based compounds. The XPS analysis revealed that lanthanide ions positioned onto the A-site of the BZT-perovskite structure increasing the MO 6-octahedra distortion ( M=Ti, Zr) and, thereby, modifying the Ti-O binding length. Polarization-electric field hysteresis loops on Ag/ RE-doped BZT/Pt capacitor showed good ferroelectric behavior and higher remanent polarization values than corresponding non-doped system.

Chemical potential fluctuations in topological insulator (Bi0.5Sb0.5)2Te3-films visualized by photocurrent spectroscopy

NASA Astrophysics Data System (ADS)

Kastl, Christoph; Seifert, Paul; He, Xiaoyue; Wu, Kehui; Li, Yongqing; Holleitner, Alexander

2015-06-01

We investigate the photocurrent properties of the topological insulator (Bi0.5Sb0.5)2Te3 on SrTiO3-substrates. We find reproducible, submicron photocurrent patterns generated by long-range chemical potential fluctuations, occurring predominantly at the topological insulator/substrate interface. We fabricate nano-plowed constrictions which comprise single potential fluctuations. Hereby, we can quantify the magnitude of the disorder potential to be in the meV range. The results further suggest a dominating photo-thermoelectric current generated in the surface states in such nanoscale constrictions.

Enhanced thermoelectric properties via oxygen non-stoichiometry in La2NiO4 and SrTiO3

NASA Astrophysics Data System (ADS)

Pardo, Victor; Botana, Antia S.; Bach, Paul M.; Leboran, Victor; Rivadulla, Francisco; Baldomir, Daniel

2013-03-01

We present the results of transport properties calculations and experiments on various oxides. A large enhancement of the thermoelectric properties is predicted[1] via ab initio calculations for La2NiO4+δ, with electronic-only thermoelectric figure of merit (zT) values exceeding unity for oxygen excess δ <= 0.10. The effects of lattice strain (caused, e.g. by growth of thin films on different substrates) enhance even further the thermoelectric response. A similar result is obtained at very low electron-doping in bulk SrTiO3 via oxygen removal. This is analyzed experimentally via thermal annealing that depletes oxygen (~ 1 oxygen vacancy per 106 unit cells). In both these systems, the increase in conductivity reached in the metallic limit retains a large thermopower, with the corresponding enhancement of zT . In the case of SrTiO3, experiments indicate[2] that such a small oxygen vacancy level reduces drastically the thermal conductivity by introducing random scattering centers. In the talk, we will discuss the electronic structure origin of the enhancement of the thermoelectric response and how this can be tuned. Results are general and applicable to other non-stoichiometric oxides.

Processing And Patterning Of Thin Film Superconductors Formed By Metallo-Organic Deposition

NASA Astrophysics Data System (ADS)

Micheli, Adolph L.; Mantese, Joseph V.; Hamdi, Aboud H.

1990-04-01

Thin film superconductors of Y-Ba-Cu and Yb-Ba-Cu were formed by the pyrolysis of neodecanoate solutions of Y, Yb, Ba and Cu which had been deposited onto <100> SrTiO3 substrates [1]. Rapid thermal annealing, in oxygen, of the as-deposited films produced high T films having superconducting onset temperatures above 90 K and zero resistance at 8g K. Scanning Electron Microscopy (SEM) revealed enhancements in grain growth, compared to furnace annealed films, by a factor of 4. X-ray diffraction analysis showed preferred epitaxial grain growth with the c-axis of the films oriented both perpendicular and parallel to the substrate surface. Separate Rutherford Backscattering Spectrometry (RBS) channeling experiments confirmed the formation of preferred epitaxial grain growth. Film composition was determined by RBS and Inductively Coupled Plasma Emission Spectrometry (ICPES). Selective patterning was accomplished by focused beam exposure of the metal neodecanoate films [2-4]. The exposure rendered the neodecanoate film locally insoluble in xylene, thus permitting selective area patterning prior to pyrolysis. Electron, ion and laser beams were used to pattern films on <100> SrTiO3. The finest lines, approximately 5 #m in width and 26 nm thick, were patterned using electron beams whose lines had superconducting onsets above 90 K and zero resistance at 69 K after rapid thermal annealing. Both ion beam and laser patterning had similar superconducting onsets and zero resistance. Neodecanoates of Y, Yb, Ba, and Cu were formed, as previously described [5], by reacting the metal acetates of these materials with either ammonium neodecanoate or tetramethyl ammonium neodecanoate. The carboxylates formed from these reactions were then dissolved in a solution of xylene and pyridine. The individual chemical constituents were combined to produce solutions, Ln:Ba:Cu, in the ratio 1:2:4. Here, Ln is a rare-earth element. Details of the preparation of the metal carboxylates may be found elsewhere [6]. Thin films of Y-Ba-Cu and Yb-Ba-Cu were deposited onto <100> SrTiO by flooding the substrates with the appropriate neodecanoate solutions, then spin drying them at 2000 rpm for 30 s. The substrates were heated rapidly to 500?°C for 5 min in an air oven to pyrolize the metallo organics to their oxides. This process produces thin films about 200 nm thick. The spin coating process was repeated 3-6 times if thicker films were desired. X-ray diffraction analysis of films pyrolized at 500?°C shoed the presence of only microcrystallites. Room temperature resistivities of lx10 0-cm were measured for these films. No superconducting behavior was observed. After the 500?°C pyrolysis the films were further processed by RTA in flowing oxygen. The substrates were placed upon oxidized silicon wafers, rapidly heated to 850?°C for 60 s using infrared radiation produced by a bank of quartz lamps then allowed to cool to room temperature. A second rapid annealing was then performed at 920?°C for 30 s in oxygen. Thin film superconductors formed in the manner described above were very uniform in structure and thickness across the surface of the film. The grains are approximately 1 #m wide and 2 #m long, a factor of 4 larger than the grains found in furnace annealed films formed by MOD [5].

Effects of substrate-induced-strain on the electrical properties and laser induced voltages of tilted La0.67Ca0.33MnO3 thin films

NASA Astrophysics Data System (ADS)

Ma, Ji; Zhang, Hui; Chen, Qingming; Liu, Xiang

2013-07-01

La0.67Ca0.33MnO3 thin films have been prepared on vicinal cut LaAlO3, (LaAlO3)0.3-(SrAlTaO6)0.7, and SrTiO3 (001) substrates by pulsed laser deposition. The influence of the substrate on the electrical transport properties and laser induced voltage (LIV) effect of the films was investigated. The high insulator to metal transition temperature Tp (263.6 K) and large peak voltage of LIV signal (2.328 V) were observed in the film grown on LaAlO3 substrate. The compressive strain and large Seebeck coefficient anisotropy ΔS (3.62 μV/K) induced by LaAlO3 are thought to be responsible for this result.

Interfacial Octahedral Rotation Mismatch Control of the Symmetry and Properties of SrRuO 3

DOE PAGES

Gao, Ran; Dong, Yongqi; Xu, Han; ...

2016-05-24

We can use epitaxial strain to tune the properties of complex oxides with perovskite structure. Beyond just lattice mismatch, the use of octahedral rotation mismatch at heterointerfaces could also provide a route to manipulate material properties. We examine the evolution of the lattice (i.e., parameters, symmetry, and octahedral rotations) of SrRuO 3 films grown on substrates engineered to have the same lattice parameters, but 2 different octahedral rotations. SrRuO 3 films grown on SrTiO 3 (001) (no octahedral rotations) and GdScO 3-buffered SrTiO 3 (001) (with octahedral rotations) substrates are found to exhibit monoclinic and tetragonal symmetry, respectively. Electrical transportmore » and magnetic measurements reveal that the tetragonal films exhibit higher resistivity, lower magnetic Curie temperatures, and more isotropic magnetism as compared to those with monoclinic structure. Synchrotron-based half-order Bragg peak analysis reveals that the octahedral rotation pattern in both film variants is the same (albeit with slightly different magnitudes of in-plane rotation angles). Furthermore, the abnormal rotation pattern observed in tetragonal SrRuO 3 indicates a possible decoupling between the internal octahedral rotation and lattice symmetry, which could provide new opportunities to engineer thin-film structure and properties.« less

PREPARATION AND ELECTRICAL PROPERTIES OF BiFeO3/La0.7Sr0.3MnO3 MULTILAYERS

NASA Astrophysics Data System (ADS)

Zhu, Huiwen; Wang, Shunli; Li, Xiaoyun

2013-07-01

(La0.7Sr0.3MnO3 12 nm/BiFeO3 12 nm)10 was grown on SrTiO3 (001) substrate using rf magnetron sputtering. The structure analysis indicated that BiFeO3/La0.7Sr0.3MnO3 multilayers were highly (001)-oriented. Compared with bottom La0.7Sr0.3MnO3 electrode, the top La0.7Sr0.3MnO3 electrode displayed a rougher surface. The electric transport characteristics of the sample were investigated mainly at low temperature, and it was found that the sample exhibited resistance-temperature curves similar to those of La0.7Sr0.3MnO3 with the exception of an upturn at lower temperature region. Furthermore, a nonlinear I-V curve, which is characteristic of a tunneling conduction mechanism, was observed at 50 K. At higher temperature, the I-V curves were found to be diode-like. When the temperature was further increased to 300 K, the sample showed a space charge limited conduction (SCLC) characteristic.

Impulse voltage control of continuously tunable bipolar resistive switching in Pt/Bi0.9Eu0.1FeO3/Nb-doped SrTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Wei, Maocai; Liu, Meifeng; Wang, Xiuzhang; Li, Meiya; Zhu, Yongdan; Zhao, Meng; Zhang, Feng; Xie, Shuai; Hu, Zhongqiang; Liu, Jun-Ming

2017-03-01

Epitaxial Bi0.9Eu0.1FeO3 (BEFO) thin films are deposited on Nb-doped SrTiO3 (NSTO) substrates by pulsed laser deposition to fabricate the Pt/BEFO/NSTO (001) heterostructures. These heterostructures possess bipolar resistive switching, where the resistances versus writing voltage exhibits a distinct hysteresis loop and a memristive behavior with good retention and anti-fatigue characteristics. The local resistive switching is confirmed by the conductive atomic force microscopy (C-AFM), suggesting the possibility to scale down the memory cell size. The observed memristive behavior could be attributed to the ferroelectric polarization effect, which modulates the height of potential barrier and width of depletion region at the BEFO/NSTO interface. The continuously tunable resistive switching behavior could be useful to achieve non-volatile, high-density, multilevel random access memory with low energy consumption.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scigaj, M.; Chao, C. H.; Gázquez, J.

The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3/LaNiO 3/SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2. Lastly, this result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.

Greatly enhanced flux pinning properties of fluorine-free metal-organic decomposition YBCO films by co-addition of halogens (Cl, Br) and metals (Zr, Sn, Hf)

NASA Astrophysics Data System (ADS)

Motoki, Takanori; Ikeda, Shuhei; Nakamura, Shin-ichi; Honda, Genki; Nagaishi, Tatsuoki; Doi, Toshiya; Shimoyama, Jun-ichi

2018-04-01

Additive-free YBCO films, as well as those with halogen (X) added, metal (M) added and (X, M) co-added, have been prepared by the fluorine-free metal-organic decomposition method on SrTiO3(100) single crystalline substrates, where X = Cl, Br and M = Zr, Sn, Hf. It was revealed that the addition of both Cl and Br to the starting solution resulted in the generation of oxyhalide, Ba2Cu3O4 X 2, in the YBCO films, and that the oxyhalide was found to promote the bi-axial orientation of the YBCO crystals. By adding a decent amount of Cl or Br, highly textured YBCO films with high J c were reproducibly obtained, even when an impurity metal, M, was co-added, while the addition of M without X did not greatly improve J c owing to the poor bi-axial orientation of the YBCO crystals. Our results suggest that the addition of Br more effectively enhances J c than the addition of Cl. The pinning force density at 40 K in 4.8 T reached ˜55 GN m-3 with the co-addition of (Br, M). This value is much larger than that of the pure YBCO film, reaching ˜17 GN m-3.

Tuning the growth and strain relaxation of ferroelectric BaTiO3 thin films on SrRuO3 electrode: influence on electrical properties

NASA Astrophysics Data System (ADS)

Aidoud, Amina; Maroutian, Thomas; Matzen, Sylvia; Agnus, Guillaume; Amrani, Bouhalouane; Driss-Khodja, Kouider; Aubert, Pascal; Lecoeur, Philippe

2018-01-01

This study is focused on the link between the structural and electric properties of BaTiO3 thin films grown on SrRuO3-buffered (001) SrTiO3 substrates, SrRuO3 acting as bottom electrode. The growth regime and film structure are here tuned through the growth pressure for pulsed laser deposition in the 1-200 mTorr range. The dielectric, ferroelectric and leakage current properties are systematically measured for the different strain states of the BaTiO3 thin films on SrRuO3. The results are discussed with the help of ab initio calculations on the effects of Ba- and Ti-vacancies on BaTiO3 lattice parameters. A sharp increase of the dielectric constant is evidenced in the high pressure region, where the tetragonality of the BaTiO3 is decreasing rapidly with growth pressure. We interpret this divergence of the dielectric function as the signature of the vicinity of the phase boundary between the out-of-plane and in-plane orientations of the tetragonal BTO films.

Temperature-dependent band structure of SrTiO3 interfaces

NASA Astrophysics Data System (ADS)

Raslan, Amany; Lafleur, Patrick; Atkinson, W. A.

2017-02-01

We build a theoretical model for the electronic properties of the two-dimensional (2D) electron gas that forms at the interface between insulating SrTiO3 and a number of polar cap layers, including LaTiO3, LaAlO3, and GdTiO3. The model treats conduction electrons within a tight-binding approximation and the dielectric polarization via a Landau-Devonshire free energy that incorporates strontium titanate's strongly nonlinear, nonlocal, and temperature-dependent dielectric response. The self-consistent band structure comprises a mix of quantum 2D states that are tightly bound to the interface and quasi-three-dimensional (3D) states that extend hundreds of unit cells into the SrTiO3 substrate. We find that there is a substantial shift of electrons away from the interface into the 3D tails as temperature is lowered from 300 K to 10 K. This shift is least important at high electron densities (˜1014cm-2 ) but becomes substantial at low densities; for example, the total electron density within 4 nm of the interface changes by a factor of two for 2D electron densities ˜1013cm-2 . We speculate that the quasi-3D tails form the low-density high-mobility component of the interfacial electron gas that is widely inferred from magnetoresistance measurements.

Preparation and characterization of BiFeO3/La0.7Sr0.3MnO3 heterostructure grown on SrTiO3 substrate

NASA Astrophysics Data System (ADS)

Zhao, Chenwei; Zhou, Chaochao; Chen, Changle

2017-09-01

In this paper, BiFeO3/La0.7Sr0.3MnO3 heterostructure is fabricated on the SrTiO (100) substrate using the pulsed laser deposition method (PLD). Magnetization hystersis loops of the BiFeO3/La0.7Sr0.3MnO3 heterostructure are obtained at 300 K and 80 K. The heterostructure exhibits evident ferromagnetic characteristic at both room temperature and 80 K. At 80 K, magnetization of the heterostructure is stronger than room temperature magnetic measure. The temperature dependence of resistance of the heterostructure with different currents is also studied. With different currents, there appears to be a peak resistance about 180 K. When I is 50 uA, ΔR is 68.4%. And when I is 100 uA, ΔR is 79.3%. The BiFeO3/La0.7Sr0.3MnO3 heterostructure exhibits a positive colossal magnetoresistance (MR) effect over a temperature range of 80-300 K. In our heterostructure, maximum magnetic resistance appears in 210 K, and MR = 44.34%. Mechanism analysis of the leakage current at room temperature shows that the leakage current is the interface-limited Schottky emission, but not dominated by the Poole-Frenkel emission or SCLC.

Electrospinning Fabrication of SrTiO3 Nanofibers and Their Photocatalytic Activity

NASA Astrophysics Data System (ADS)

Xu, Lei; Zhao, Yiping; Wang, Wei; Liu, Hao; Wang, Rui

2018-06-01

SrTiO3 nanofibers were fabricated by an electrospinning process. The phase, microstructure and photocatalytic activity of the obtained SrTiO3 nanofibers were investigated. The XRD patterns and the SEM images suggest that SrTiO3 nanofibers with perovskite phase and rough surface have been fabricated in the current work. The SrTiO3 nanofibers show a high efficiency decomposition of RhB under ultraviolet light irradiation. The high photocatalytic activity of SrTiO3 nanofibers results from the large specific surface area. The large specific surface area provides more surface active sits and makes an easier charge carrier transport. On the basis of the photocatalytic performance of SrTiO3 nanofibers, the possible photocatalysis mechanism was proposed.

Dynamic interface rearrangement in LaFeO3/n -SrTiO3 heterojunctions

NASA Astrophysics Data System (ADS)

Spurgeon, Steven R.; Sushko, Peter V.; Chambers, Scott A.; Comes, Ryan B.

2017-11-01

Thin-film synthesis methods that have developed over the past decades have unlocked emergent interface properties ranging from conductivity to ferroelectricity. However, our attempts to exercise precise control over interfaces are constrained by a limited understanding of growth pathways and kinetics. Here we demonstrate that shuttered molecular beam epitaxy induces rearrangements of atomic planes at a polar/nonpolar junction of LaFeO3 (LFO)/n -SrTiO3 (STO) depending on the substrate termination. Surface characterization confirms that substrates with two different (TiO2 and SrO) terminations were prepared prior to LFO deposition; however, local electron-energy-loss spectroscopy measurements of the final heterojunctions show a predominantly LaO/TiO2 interfacial junction in both cases. Ab initio simulations suggest that the interfaces can be stabilized by trapping extra oxygen (in LaO/TiO2) and forming oxygen vacancies (in FeO2/SrO), which points to different growth kinetics in each case and may explain the apparent disappearance of the FeO2/SrO interface. We conclude that judicious control of deposition time scales can be used to modify growth pathways, opening new avenues to control the structure and properties of interfacial systems.

New Insights into Sensitization Mechanism of the Doped Ce (IV) into Strontium Titanate

PubMed Central

Wang, Yuan; Liu, Chenglun; Xu, Longjun

2018-01-01

SrTiO3 and Ce4+ doped SrTiO3 were synthesized by a modified sol–gel process. The optimization synthesis parameters were obtained by a series of single factor experiments. Interesting phenomena are observable in Ce4+ doped SrTiO3 systems. Sr2+ in SrTiO3 system was replaced by Ce4+, which reduced the surface segregation of Ti4+, ameliorated agglomeration, increased specific surface area more than four times compared with pure SrTiO3, and enhanced quantum efficiency for SrTiO3. Results showed that Ce4+ doping increased the physical adsorption of H2O and adsorbed oxygen on the surface of SrTiO3, which produced additional catalytic active centers. Electrons on the 4f energy level for Ce4+ produced new energy states in the band gap of SrTiO3, which not only realized the use of visible light but also led to an easier separation between the photogenerated electrons and holes. Ce4+ repeatedly captured photoelectrons to produce Ce3+, which inhibited the recombination between photogenerated electrons and holes as well as prolonged their lifetime; it also enhanced quantum efficiency for SrTiO3. The methylene blue (MB) degradation efficiency reached 98.7% using 3 mol % Ce4+ doped SrTiO3 as a photocatalyst, indicating highly photocatalytic activity. PMID:29690605

Glass-Like Thermal Conductivity of (010)-Textured Lanthanum-Doped Strontium Niobate Synthesized with Wet Chemical Deposition

DOE PAGES

Foley, Brian M.; Brown-Shaklee, Harlan J.; Campion, Michael J.; ...

2014-11-08

We have measured the cross-plane thermal conductivity (κ) of (010)-textured, undoped, and lanthanum-doped strontium niobate (Sr 2-xLa xNb 2O 7-δ) thin films via time-domain thermoreflectance. Then the thin films were deposited on (001)-oriented SrTiO 3 substrates via the highly-scalable technique of chemical solution deposition. We find that both film thickness and lanthanum doping have little effect on κ, suggesting that there is a more dominant phonon scattering mechanism present in the system; namely the weak interlayer-bonding along the b-axis in the Sr 2Nb 2O 7 parent structure. We also compare our experimental results with two variations of the minimum-limit modelmore » for κ and discuss the nature of transport in material systems with weakly-bonded layers. The low cross-plane κ of these scalably-fabricated films is comparable to that of similarly layered niobate structures grown epitaxially.« less

ARPES Studies on the substrate effect on monolayer FeSe

NASA Astrophysics Data System (ADS)

Rebec, Slavko; Jia, Tao; Lee, James; Li, Wei; Zhang, Chaofan; Moore, Robert; Shen, Z. X.

For 2D films, interface interactions can play a critical role in determining the prevailing physics of the system. In the case of FeSe on SrTiO3, reducing the FeSe thickness to 1 monolayer (ML) from bulk leads to a significantly increased superconducting transition temperature (Tc). To fully utilize and maximize this approach to increasing Tc in FeSe and potentially apply it to other superconducting materials, the role which the substrate plays in this system must be understood. Here we present recent in-situ angle-resolved photo emission studies of the substrate effect on MBE grown 1 ML FeSe films.

High-Quality FeTe1-x Se x Monolayer Films on SrTiO3(001) Substrates Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Han, Zhi-Qing; Shi, Xun; Peng, Xi-Liang; Sun, Yu-Jie; Wang, Shan-Cai

2017-10-01

Not Available Supported by the Ministry of Science and Technology of China under Grant Nos 2015CB921000, 2016YFA0401000, 2015CB921301 and 2016YFA0300300, and the National Natural Science Foundation of China under Grant Nos 11274381, 11574371, 11274362, 1190020, 11334012 and 11674371.

Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study.

PubMed

Bano, Amreen; Gaur, N K

2018-01-15

A variety of theoretical and experimental works have reported several potential applications of MoS 2 monolayer based heterostructures (HSs) such as light emitting diodes, photodetectors and field effect transistors etc. In the present work, we have theoretically performed as a model case study, MoS 2 monolayer deposited over insulating SrTiO 3 (001) to study the band alignment at TiO 2 termination. The interfacial characteristics are found to be highly dependent on the interface termination. With an insulating oxide material, a significant band gap (0.85eV) is found in MoS 2 /TiO 2 interface heterostructure (HS). A unique electronic band profile with an indirect band gap (0.67eV) is observed in MoS 2 monolayer when confined in a cubic environment of SrTiO 3 (STO). Adsorption analysis showed the chemisorption of MoS 2 on the surface of STO substrate with TiO 2 termination which is justified by the charge density calculations that shows the existence of covalent bonding at the interface. The fabrication of HS of such materials paves the path for developing the unprecedented 2D materials with exciting properties such as semiconducting devices, thermoelectric and optoelectronic applications.

Magnetic orders of LaTiO3 under epitaxial strain: A first-principles study

NASA Astrophysics Data System (ADS)

Weng, Yakui; Huang, Xin; Tang, Yankun; Dong, Shuai

2014-05-01

Perovskite LaTiO3 bulk is a typical Mott-insulator with G-type antiferromagnetic order. In this work, the biaxial strain effects on the ground magnetic order of LaTiO3 films grown on various substrates have been studied. For the compressive strain, LaTiO3 films grown on LaAlO3, LaGaO3, and SrTiO3 substrates undergo a phase transition from the original G-type antiferromagnet to A-type antiferromagnet. The underlying physical mechanisms are the lattice distortions tunned by strain. While for the tensile strain, the BaTiO3 and LaScO3 substrates have been tested, which show a tendency to transit the LaTiO3 to the C-type antiferromagnet. Furthermore, our calculations find that the magnetic transitions under epitaxial strain do not change the insulating fact of LaTiO3.

Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Huang, X. D.; Lai, P. T.; Liu, L.; Xu, J. P.

2011-06-01

Charge-trapping characteristics of SrTiO3 with and without nitrogen incorporation were investigated based on Al/Al2O3/SrTiO3/SiO2/Si (MONOS) capacitors. A Ti-silicate interlayer at the SrTiO3/SiO2 interface was confirmed by x-ray photoelectron spectroscopy and transmission electron microscopy. Compared with the MONOS capacitor with SrTiO3 as charge-trapping layer (CTL), the one with nitrided SrTiO3 showed a larger memory window (8.4 V at ±10 V sweeping voltage), higher P/E speeds (1.8 V at 1 ms +8 V) and better retention properties (charge loss of 38% after 104 s), due to the nitrided SrTiO3 film exhibiting higher dielectric constant, higher deep-level traps induced by nitrogen incorporation, and suppressed formation of Ti silicate between the CTL and SiO2 by nitrogen passivation.

Effects of background oxygen pressure on dielectric and ferroelectric properties of epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrTiO3

NASA Astrophysics Data System (ADS)

Abazari, M.; Akdoǧan, E. K.; Safari, A.

2008-11-01

Oxygen partial pressure (PO_2) in pulsed laser deposition significantly influences the composition, microstructure, and electrical properties of epitaxial misfit strain-relieved 450nm ⟨001⟩ oriented epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated SrTiO3. Films deposited at 400mTorr exhibit high remnant and saturated polarization of 7.5 and 16.5μC /cm2, respectively, which is ˜100% increase over the ones grown at 100mTorr. The dielectric constant linearly increases from 220 to 450 with increasing PO2. The observed changes in surface morphology of the films and their properties are shown to be due to the suppression of volatile A-site cation loss.

Effect of manganese doping on remnant polarization and leakage current in (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 epitaxial thin films on SrTiO3

NASA Astrophysics Data System (ADS)

Abazari, M.; Akdoǧan, E. K.; Safari, A.

2008-05-01

Single phase, epitaxial, ⟨001⟩ oriented, undoped and 1mol% Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films of 400nm thickness were synthesized on SrRuO3 coated SrTiO3. Such films exhibit well saturated hysteresis loops and have a spontaneous polarization (Ps) of 10μC /cm2, which is a 150% higher over the Ps of the undoped composition. The coercive field of 1mol% Mn doped films is 13kV/cm. Mn-doping results in three orders of magnitude decrease in leakage current above 50kV/cm electric field, which we attribute to the suppression of intrinsic p-type conductivity of undoped films by Mn donors.

Parallel charge sheets of electron liquid and gas in La0.5Sr0.5TiO3/SrTiO3 heterostructures

PubMed Central

Renshaw Wang, X.; Sun, L.; Huang, Z.; Lü, W. M.; Motapothula, M.; Annadi, A.; Liu, Z. Q.; Zeng, S. W.; Venkatesan, T.; Ariando

2015-01-01

We show here a new phenomenon in La0.5Sr0.5TiO3/SrTiO3 (LSTO/STO) heterostructures; that is a coexistence of three-dimensional electron liquid (3DEL) and 2D electron gas (2DEG), separated by an intervening insulating LSTO layer. The two types of carriers were revealed through multi-channel analysis of the evolution of nonlinear Hall effect as a function of film thickness, temperature and back gate voltage. We demonstrate that the 3D electron originates from La doping in LSTO film and the 2D electron at the surface of STO is due to the polar field in the intervening insulating layer. As the film thickness is reduced below a critical thickness of 6 unit cells (uc), an abrupt metal-to-insulator transition (MIT) occurs without an intermediate semiconducting state. The properties of the LSTO layer grown on different substrates suggest that the insulating phase of the intervening layer is a result of interface strain induced by the lattice mismatch between the film and substrate. Further, by fitting the magnetoresistance (MR) curves, the 6 unit cell thick LSTO is shown to exhibit spin-orbital coupling. These observations point to new functionalities, in addition to magnetism and superconductivity in STO-based systems, which could be exploited in a multifunctional context. PMID:26669575

Electronic properties and surface reactivity of SrO-terminated SrTiO3 and SrO-terminated iron-doped SrTiO3

PubMed Central

Staykov, Aleksandar; Tellez, Helena; Druce, John; Wu, Ji; Ishihara, Tatsumi; Kilner, John

2018-01-01

Abstract Surface reactivity and near-surface electronic properties of SrO-terminated SrTiO3 and iron doped SrTiO3 were studied with first principle methods. We have investigated the density of states (DOS) of bulk SrTiO3 and compared it to DOS of iron-doped SrTiO3 with different oxidation states of iron corresponding to varying oxygen vacancy content within the bulk material. The obtained bulk DOS was compared to near-surface DOS, i.e. surface states, for both SrO-terminated surface of SrTiO3 and iron-doped SrTiO3. Electron density plots and electron density distribution through the entire slab models were investigated in order to understand the origin of surface electrons that can participate in oxygen reduction reaction. Furthermore, we have compared oxygen reduction reactions at elevated temperatures for SrO surfaces with and without oxygen vacancies. Our calculations demonstrate that the conduction band, which is formed mainly by the d-states of Ti, and Fe-induced states within the band gap of SrTiO3, are accessible only on TiO2 terminated SrTiO3 surface while the SrO-terminated surface introduces a tunneling barrier for the electrons populating the conductance band. First principle molecular dynamics demonstrated that at elevated temperatures the surface oxygen vacancies are essential for the oxygen reduction reaction. PMID:29535797

Homogeneity and variation of donor doping in Verneuil-grown SrTiO3:Nb single crystals

PubMed Central

Rodenbücher, C.; Luysberg, M.; Schwedt, A.; Havel, V.; Gunkel, F.; Mayer, J.; Waser, R.

2016-01-01

The homogeneity of Verneuil-grown SrTiO3:Nb crystals was investigated. Due to the fast crystal growth process, inhomogeneities in the donor dopant distribution and variation in the dislocation density are expected to occur. In fact, for some crystals optical studies show variations in the density of Ti3+ states on the microscale and a cluster-like surface conductivity was reported in tip-induced resistive switching studies. However, our investigations by TEM, EDX mapping, and 3D atom probe reveal that the Nb donors are distributed in a statistically random manner, indicating that there is clearly no inhomogeneity on the macro-, micro-, and nanoscale in high quality Verneuil-grown crystals. In consequence, the electronic transport in the bulk of donor-doped crystals is homogeneous and it is not significantly channelled by extended defects such as dislocations which justifies using this material, for example, as electronically conducting substrate for epitaxial oxide film growth. PMID:27577508

Synthesis of Multifunctional Materials

DTIC Science & Technology

2006-09-01

temperatures of 600’C and higher, whereas layers grown at lower temperature contained PbO inclusions. Growth of Pb(ZrxTi1 ..)0 3 ( PZT ) films by molecular...beam epitaxy was demonstrated for the first time. Single-crystal, single-phase PZT films were grown on (001) SrTiO3 substrates at a growth temperature...compounds of the PZT system, PbTiO 3 and PbZrO 3, and three-dimensional growth mode for PZT films of intermediate compositions. Epitaxial growth of PbO

Anisotropic two-dimensional electron gas at SrTiO3(110)

PubMed Central

Wang, Zhiming; Zhong, Zhicheng; Hao, Xianfeng; Gerhold, Stefan; Stöger, Bernhard; Schmid, Michael; Sánchez-Barriga, Jaime; Varykhalov, Andrei; Franchini, Cesare; Held, Karsten; Diebold, Ulrike

2014-01-01

Two-dimensional electron gases (2DEGs) at oxide heterostructures are attracting considerable attention, as these might one day substitute conventional semiconductors at least for some functionalities. Here we present a minimal setup for such a 2DEG––the SrTiO3(110)-(4 × 1) surface, natively terminated with one monolayer of tetrahedrally coordinated titania. Oxygen vacancies induced by synchrotron radiation migrate underneath this overlayer; this leads to a confining potential and electron doping such that a 2DEG develops. Our angle-resolved photoemission spectroscopy and theoretical results show that confinement along (110) is strikingly different from the (001) crystal orientation. In particular, the quantized subbands show a surprising “semiheavy” band, in contrast with the analog in the bulk, and a high electronic anisotropy. This anisotropy and even the effective mass of the (110) 2DEG is tunable by doping, offering a high flexibility to engineer the properties of this system. PMID:24591596

Oxygen vacancy induced structural evolution of SrFeO3 -x epitaxial thin film from brownmillerite to perovskite

NASA Astrophysics Data System (ADS)

Roh, Seulki; Lee, Seokbae; Lee, Myounghoon; Seo, Yu-Seong; Khare, Amit; Yoo, Taesup; Woo, Sungmin; Choi, Woo Seok; Hwang, Jungseek; Glamazda, A.; Choi, K.-Y.

2018-02-01

We investigated SrFeO3 -x thin films on a SrTiO3 (001) substrate prepared via pulsed laser epitaxy using an optical spectroscopy technique. The oxygen vacancy level (x ) was controlled by post-annealing processes at different oxygen partial pressures. We achieved a brownmillerite (BM) structure at x =0.5 and observed the evolution of the crystal structure from BM into perovskite (PV) as the oxygen concentration increased. We observed the evolution of infrared-active phonons with respect to the oxygen concentration, which was closely related to the structural evolution observed via x-ray diffraction. We identified the phonons using the shell-model calculation. Furthermore, we studied temperature-dependent behaviors of the phonon modes of three representative samples: PV and two BMs (BMoop and BMip) with different orientations of the oxygen vacancy channel. In the BMoop sample, we observed a phonon mode, which exhibited an unusual redshift with decreasing temperature; this behavior may have been due to the apical oxygen instability in the FeO6 octahedron. Our results provide important information regarding the ionic conduction mechanism in SrFeO3 -x material systems.

Improvement of laser molecular beam epitaxy grown SrTiO3 thin film properties by temperature gradient modulation growth

NASA Astrophysics Data System (ADS)

Li, Jin Long; Hao, J. H.; Li, Y. R.

2007-09-01

Oxygen diffusion at the SrTiO3/Si interface was analyzed. A method called temperature gradient modulation growth was introduced to control oxygen diffusion at the interface of SrTiO3/Si. Nanoscale multilayers were grown at different temperatures at the initial growing stage of films. Continuous growth of SrTiO3 films was followed to deposit on the grown sacrificial layers. The interface and crystallinity of SrTiO3/Si were investigated by in situ reflection high energy electron diffraction and x-ray diffraction measurements. It has been shown that the modulated multilayers may help suppress the interfacial diffusion, and therefore improve SrTiO3 thin film properties.

Études par diffraction haute résolution et réflectivité de films minces épitaxiés

NASA Astrophysics Data System (ADS)

Baulès, P.; Casanove, M. J.; Roucau, C.; Ousset, J. C.; Bobo, J. F.; Snoeck, E.; Magnoux, D.; Gatel, C.

2002-07-01

The studies we present concern the general researches involved in order to understand the growth mechanisms of thin films deposited on oriented substrates. Among the different investigation technics of the thin layers, X-ray diffraction and reflectivity will be discussed through two applications. In a first step, thediffraction presented, illustrated by reciprocal space mapping, will give information about the layer state of stress and the lattice distorsion of La{1-x}SrxMnO3 deposited on SrTiO3. The results obtained are discussed and compared to those given by electron microscopy. In a second step, we will present an application of reflectivity concerning a very roughness surface of platinum deposited on MgO showing an island growth process. We will verify that reflectivity can lead to the determination of the recovered rate of the surface, even if some problems exist in the simulation of the whole data set. Results obtained in electron microscopy will complete those issued from reflectivity. Les études que nous allons présenter sont à replacer dans le contexte général de la compréhension des mécanismes de croissance des films minces déposés sur des substrats orientés. Parmi les diverses techniques d'investigations des couches minces, la diffraction et la réflectivité des rayons X vont être abordées à travers deux applications. Nous verrons tout d'abord que la diffraction, illustrée par la cartographie en deux dimension du réseau réciproque, permet de remonter à l'état de contrainte ainsi qu'à la déformation de la maille de La{1-x}SrxMnO3 déposé sur SrTiO3. Les résultats déduits de ces mesures seront discutés et comparés à ceux obtenus en microscopie électronique. Dans la suite de l'article, nous verrons une des applications de la réflectivité, sur une surface très perturbée de platine déposé sur MgO et présentant une croissance en îlots. Nous verrons que la réflectivité permet d'estimer le taux de recouvrement de la surface, mais que des problèmes persistent dans la simulation de l'intégralité des données expérimentales. Les résultats obtenus en MET viendront compléter ceux issus de la réflectivité.

Independence of surface morphology and reconstruction during the thermal preparation of perovskite oxide surfaces

NASA Astrophysics Data System (ADS)

Jäger, Maren; Teker, Ali; Mannhart, Jochen; Braun, Wolfgang

2018-03-01

Using a CO2 laser to directly heat the crystals from the back side, SrTiO3 substrates may be thermally prepared in situ for epitaxy without the need for ex-situ etching and annealing. We find that the formation of large terraces with straight steps at 900-1100 °C is independent of the formation of the ideal surface reconstruction for epitaxy, which requires temperatures in excess of 1200 °C to complete. The process may be universal, at least for perovskite oxide surfaces, as it also works, at different temperatures, for LaAlO3 and NdGaO3, two other widely used oxide substrate materials.

P-doped strontium titanate grown using two target pulsed laser deposition for thin film solar cells

NASA Astrophysics Data System (ADS)

Man, Hamdi

Thin-film solar cells made of Mg-doped SrTiO3 p-type absorbers are promising candidates for clean energy generation. This material shows p-type conductivity and also demonstrates reasonable absorption of light. In addition, p-type SrTiO3 can be deposited as thin films so that the cost can be lower than the competing methods. In this work, Mg-doped SrTiO3 (STO) thin-films were synthesized and analyzed in order to observe their potential to be employed as the base semiconductor in photovoltaic applications. Mg-doped STO thin-films were grown by using pulsed laser deposition (PLD) using a frequency quadrupled Yttrium Aluminum Garnet (YAG) laser and with a substrate that was heated by back surface absorption of infrared (IR) laser light. The samples were characterized using X-ray photoelectron spectroscopy (XPS) and it was observed that Mg atoms were doped successfully in the stoichiometry. Reflection high energy electron diffraction (RHEED) spectroscopy proved that the thin films were polycrystalline. Kelvin Probe work function measurements indicated that the work function of the films were 4.167 eV after annealing. UV/Vis Reflection spectroscopy showed that Mg-doped STO thin-films do not reflect significantly except in the ultraviolet region of the spectrum where the reflection percentage increased up to 80%. Self-doped STO thin-films, Indium Tin Oxide (ITO) thin films and stainless steel foil (SSF) were studied in order to observe their characteristics before employing them in Mg-doped STO based solar cells. Self-doped STO thin films were grown using PLD and the results showed that they are capable of serving as the n-type semiconductor in solar cell applications with oxygen vacancies in their structure and low reflectivity. Indium Tin Oxide thin-films grown by PLD system showed low 25-50 ?/square sheet resistance and very low reflection features. Finally, commercially available stainless steel foil substrates were excellent substrates for the inexpensive growth of these novel solar cells.

Fabrication and Photocatalytic Property of Novel SrTiO3/Bi5O7I Nanocomposites

NASA Astrophysics Data System (ADS)

Xia, Yongmei; He, Zuming; Su, Jiangbin; Liu, Ya; Tang, Bin

2018-05-01

The novel SrTiO3/Bi5O7I nanocomposites were successfully fabricated by a thermal decomposition approach. The as-prepared samples were characterized by XRD, XPS, SEM, EDS, FTIR, DRS and PL spectra. The results show that the SrTiO3/Bi5O7I nanocomposites are composed of perovskite SrTiO3 nanoparticles and tetragonal Bi5O7I nanorods. The SrTiO3/Bi5O7I nanocomposites exhibit an excellent photocatalytic performance for the degradation of RhB solution under simulated solar light irradiation, which is superior to that of pristine Bi5O7I and SrTiO3. In particular, the 30 wt% SrTiO3/Bi5O7I nanocomposite is found as the optimal composites, over which the dye degradation reaches 89.6% for 150 min of photocatalysis. The photocatalytic degradation rate of the 30 wt% SrTiO3/Bi5O7I nanocomposite is found to be 3.97 times and 12.5 times higher than that of bare Bi5O7I and SrTiO3, respectively. The reactive species trapping experiments suggest that \\bullet {O}_2- and holes are the main active species responsible for the RhB degradation. In addition, the PL spectra elucidate the effective separation of photoinduced electron-hole pairs. Further, the possible photocatalytic mechanism of the SrTiO3/Bi5O7I nanocomposites is also elucidated based on the experimental evidences.

Fabrication and Photocatalytic Property of Novel SrTiO3/Bi5O7I Nanocomposites.

PubMed

Xia, Yongmei; He, Zuming; Su, Jiangbin; Liu, Ya; Tang, Bin

2018-05-11

The novel SrTiO 3 /Bi 5 O 7 I nanocomposites were successfully fabricated by a thermal decomposition approach. The as-prepared samples were characterized by XRD, XPS, SEM, EDS, FTIR, DRS and PL spectra. The results show that the SrTiO 3 /Bi 5 O 7 I nanocomposites are composed of perovskite SrTiO 3 nanoparticles and tetragonal Bi 5 O 7 I nanorods. The SrTiO 3 /Bi 5 O 7 I nanocomposites exhibit an excellent photocatalytic performance for the degradation of RhB solution under simulated solar light irradiation, which is superior to that of pristine Bi 5 O 7 I and SrTiO 3 . In particular, the 30 wt% SrTiO 3 /Bi 5 O 7 I nanocomposite is found as the optimal composites, over which the dye degradation reaches 89.6% for 150 min of photocatalysis. The photocatalytic degradation rate of the 30 wt% SrTiO 3 /Bi 5 O 7 I nanocomposite is found to be 3.97 times and 12.5 times higher than that of bare Bi 5 O 7 I and SrTiO 3 , respectively. The reactive species trapping experiments suggest that [Formula: see text] and holes are the main active species responsible for the RhB degradation. In addition, the PL spectra elucidate the effective separation of photoinduced electron-hole pairs. Further, the possible photocatalytic mechanism of the SrTiO 3 /Bi 5 O 7 I nanocomposites is also elucidated based on the experimental evidences.

Effect of Bi(Mg1/2Ti1/2)O3 addition on the electrical properties of Si-Mn modified on SrTiO3

NASA Astrophysics Data System (ADS)

Roh, Yoon-ah; Masaki, Takaki; Yoon, Dae-Ho

2015-05-01

Single-Crystalline Strontium titanate (SrTiO3) has been widely used in many fields such as catalyst, semiconductors and dielectrics. SrTiO3 is a typical perovskite-type oxide, the physical properties of which strongly depend on its chemical composition, structure, shape, size, and crystallinity. In this work, the effects of Bi(Mg1/2Ti1/2)O3 addition on the nanostructure and the dielectric properties of Si-Mn modified SrTiO3 were investigated to develop nano-sized particles and low-temperature-fired SrTiO3-based ceramics with stable temperature characteristics. The dielectric constant of SrTiO3-Bi(Mg1/2Ti1/2)O3 was found to range from 900 to 1200 at 1 kHz for samples sintered at 1200°C. This new composition, SrTiO3-Bi(Mg1/2Ti1/2)O3, can be applied as a nano-sized dielectric materials in various fields.

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

PubMed Central

Dral, A. Petra; Dubbink, David; Nijland, Maarten; ten Elshof, Johan E.; Rijnders, Guus; Koster, Gertjan

2014-01-01

Atomically defined substrate surfaces are prerequisite for the epitaxial growth of complex oxide thin films. In this protocol, two approaches to obtain such surfaces are described. The first approach is the preparation of single terminated perovskite SrTiO3 (001) and DyScO3 (110) substrates. Wet etching was used to selectively remove one of the two possible surface terminations, while an annealing step was used to increase the smoothness of the surface. The resulting single terminated surfaces allow for the heteroepitaxial growth of perovskite oxide thin films with high crystalline quality and well-defined interfaces between substrate and film. In the second approach, seed layers for epitaxial film growth on arbitrary substrates were created by Langmuir-Blodgett (LB) deposition of nanosheets. As model system Ca2Nb3O10- nanosheets were used, prepared by delamination of their layered parent compound HCa2Nb3O10. A key advantage of creating seed layers with nanosheets is that relatively expensive and size-limited single crystalline substrates can be replaced by virtually any substrate material. PMID:25549000

Deposition of high quality YBa2Cu3O(7-delta) thin films over large areas by pulsed laser ablation with substrate scanning

NASA Technical Reports Server (NTRS)

Davis, M. F.; Wosik, J.; Forster, K.; Deshmukh, S. C.; Rampersad, H. R.

1991-01-01

The paper describes thin films deposited in a system where substrates are scanned over areas up to 3.5 x 3.5 cm through the stationary plume of an ablated material defined by an aperture. These YBCO films are deposited on LaAlO3 and SrTiO3 substrates with the thickness of 90 and 160 nm. Attention is focused on the main features of the deposition system: line focusing of the laser beam on the target; an aperture defining the area of the plume; computerized stepper motor-driven X-Y stage translating the heated sampler holder behind the plume-defining aperture in programmed patterns; and substrate mounting block with uniform heating at high temperatures over large areas. It is noted that the high degree of uniformity of the properties in each film batch illustrates that the technique of pulsed laser deposition can be applied to produce large YBCO films of high quality.

Transition regime from step-flow to step-bunching in the growth of epitaxial SrRuO3 on (001) SrTiO3

NASA Astrophysics Data System (ADS)

Gura, Anna; Bertino, Giulia; Bein, Benjamin; Dawber, Matthew

2018-04-01

We present a study of the surface morphology of SrRuO3 thin films grown on TiO2 terminated (001) SrTiO3 substrates using an off-axis RF magnetron sputtering deposition technique. We investigated the step bunching formation and the evolution of the films by varying deposition parameters. The thin films were characterized using atomic force microscopy methods, allowing us to study the various growth regimes of SrRuO3 as a function of the growth parameters. We observe a strong influence of both the miscut angle and growth temperature on the evolution of the SrRuO3 surface morphology. In addition, a thickness dependence is present. Remarkably, the formation of a smooth, regular, and uniform "fish-skin" structure at the step-bunch transition is observed. The fish-skin morphology results from the merging of 2D flat islands predicted by previous models. The direct observation of surface evolution allows us to better understand the different growth regimes of SrRuO3 thin films.

Imaging and tuning polarity at SrTiO3 domain walls

NASA Astrophysics Data System (ADS)

Frenkel, Yiftach; Haham, Noam; Shperber, Yishai; Bell, Christopher; Xie, Yanwu; Chen, Zhuoyu; Hikita, Yasuyuki; Hwang, Harold Y.; Salje, Ekhard K. H.; Kalisky, Beena

2017-12-01

Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO3/SrTiO3 interface 2DEG at the nanoscale. In particular, SrTiO3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO3 twin boundary and detect a change in LaAlO3/SrTiO3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO3-based devices on the nanoscale.

Strain Phase Diagram of SrTiO3 Thin Films

NASA Astrophysics Data System (ADS)

He, Feizhou; Shapiro, S. M.

2005-03-01

SrTiO3 thin films were used as a model system to study the effects of strain and epitaxial constraint on structural phase transitions of oxide films. The basic phenomena revealed will apply to a variety of important structural transitions including the ferroelectric transition. Highly strained, epitaxial films of SrTiO3 were grown on different substrates. The structural phase transition temperature Tc increases from 105 K in bulk STO to 167 K for films under tensile strain and 330 K for films with compressive strain. The measured temperature-strain phase diagram is qualitatively consistent with theory [1], however the increase in Tc is much larger than predicted in all cases. The symmetry of the phases involved in the transition is different from the corresponding bulk structures largely because of epitaxial constraint, the clamping effect. Thus the shape of the STO unit cell is tetragonal at all temperatures. The possibility exists of a very unique low temperature phase with orthorhombic symmetry (Cmcm) but tetragonal unit cell shape. More generally, we have characterized at least three different manifestations of the clamping effect, showing it is much more subtle than usually recognized. This work is supported through NSF DMR-0239667, DMR-0132918, by the Research Corp, and at BNL by the US DOE DE-AC02-98CH10886. [1] N. A. Pertsev, A. K. Tagantsev and N. Setter, Phys. Rev. B61, R825 (2000).

Photoreduction of CO2 on TiO2/SrTiO3 Heterojunction Network Film

NASA Astrophysics Data System (ADS)

Bi, Yongsheng; Zong, Lanlan; Li, Chen; Li, Qiuye; Yang, Jianjun

2015-08-01

Nanotube titanic acid (NTA) network film has a porous structure and large BET surface area, which lead them to possessing high utilization of the incident light and strong adsorption ability. We used NTA as the precursor to fabricate a TiO2/ SrTiO3 heterojunction film by the hydrothermal method. In the process of the reaction, part of NTA reacted with SrCl2 to form SrTiO3 nanocubes, and the remainder dehydrated to transform to the rutile TiO2. The ratio of TiO2 and SrTiO3 varied with the hydrothermal reaction time. SEM and TEM images indicated that SrTiO3 nanocubes dispersed uniformly on TiO2 film, and the particle size and crystallinity of SrTiO3 nanocubes increased with the reaction time prolonging. The TiO2/SrTiO3 heterojunction obtained by 1 h showed the best activity for CO2 photoreduction, where the mole ratio of TiO2 and SrTiO3 was 4:1. And the photo-conversion efficiency of CO2 to CH4 improved remarkably after the foreign electron traps of Pt and Pd nanoparticles were loaded. The highest photocatalytic production rate of CH4 reached 20.83 ppm/h cm2. In addition, the selectivity of photoreduction product of CO2 was also increased apparently when Pd acted as the cocatalyst on TiO2/SrTiO3 heterojunction film.

Characterization of Fe-doped SrTiO3/BaTiO3 multilayer films and their ethanol sensing applications

NASA Astrophysics Data System (ADS)

Supasai, Thidarat; Wisitsoraat, Anurat; Hodak, Satreerat

2010-03-01

Fe-doped SrTiO3/BaTiO3 multilayer films have been deposited on alumina substrate using a sol-gel spin coating technique. The field effect scanning electron microscope photographs revealed a mixture of round and facet-shaped crystals in the undoped films. This microstructure disappeared in Fe-doped films which adopted a more porous sponge-like structure. The grain size of the films decreased from 300 nm for undoped films to 100 nm and 70 nm with Fe doping concentrations of 4 and 8 wt%, respectively. The absorption edge energy for X-rays by Fe was found to be about 7121 eV consistent with Fe^2+ oxidation state. Interdigitated electrodes were applied on these films for ethanol gas sensing application. A sensitivity figure of merit based on the relative change in the resistance of the Fe-doped films 8 wt% film was found to be in the 1-3 range for ethanol doses of 100-1000 ppm when operating at 250 C and in the range of 3-10 when the operating temperature was 350 C.

Electrochemical fabrication of SrTiO3 nanowires with nanoporous alumina template.

PubMed

Kang, Jinwook; Ryu, Jaemin; Ko, Eunseong; Tak, Yongsug

2007-11-01

Strontium titanate nanowires were electrochemically synthesized with nanoporous alumina template. Both chemical and electrical variables such as electrolyte pH, temperature, and current waveform were modulated to investigate the synthesis process of SrTiO3 nanowires. Superimposed cathodic pulse and diffusion time accelerated the growth of SrTiO3 nanowires, which suggested that the concentration of H+ and Sr2+ ion inside alumina template had a strong influence on the formation of SrTiO3 nanowires. Morphology and crystallinity of SrTiO3 nanowires were investigated with scanning electron microscope, X-ray diffractometer and energy dispersive X-ray spectroscopy.

Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices.

PubMed

Takizawa, M; Wadati, H; Tanaka, K; Hashimoto, M; Yoshida, T; Fujimori, A; Chikamatsu, A; Kumigashira, H; Oshima, M; Shibuya, K; Mihara, T; Ohnishi, T; Lippmaa, M; Kawasaki, M; Koinuma, H; Okamoto, S; Millis, A J

2006-08-04

We have measured photoemission spectra of SrTiO3/LaTiO3 superlattices with a topmost SrTiO3 layer of variable thickness. A finite coherent spectral weight with a clear Fermi cutoff was observed at chemically abrupt SrTiO3/LaTiO3 interfaces, indicating that an "electronic reconstruction" occurs at the interface between the Mott insulator LaTiO3 and the band insulator SrTiO3. For SrTiO3/LaTiO3 interfaces annealed at high temperatures (approximately 1000 degrees C), which leads to Sr/La atomic interdiffusion and hence to the formation of La(1-x)Sr(x)TiO3-like material, the intensity of the incoherent part was found to be dramatically reduced whereas the coherent part with a sharp Fermi cutoff was enhanced due to the spread of charge. These important experimental features are well reproduced by layer dynamical-mean-field-theory calculation.

A novel synthesis of SrCO3-SrTiO3 nanocomposites with high photocatalytic activity

NASA Astrophysics Data System (ADS)

Márquez-Herrera, A.; Ovando-Medina, Víctor M.; Castillo-Reyes, Blanca E.; Meléndez-Lira, M.; Zapata-Torres, M.; Saldaña, N.

2014-12-01

The results of the production and characterization of SrCO3-SrTiO3 nanocomposites as a promising candidate for efficient photocatalysts are reported. The production is based on a novelty route employing the solvothermal method with strontium chloride and titanium (IV) butoxide as the precursor solutions. The effect on the properties of the nanocomposites due to changes in the content of SrCO3 and SrTiO3 is reported. The as-prepared materials were tested in the photodegradation of methylene blue dye in aqueous solutions under the solar light. The reported route allows the production of SrCO3-SrTiO3 nanocomposites with particle sizes ranging between 18 and 29 nm. The SrCO3-SrTiO3 nanocomposites obtained with 19 % of SrCO3 phase and 81 % of SrTiO3 (M10) can achieve 94 and 97 % of dye photodegradation after 30 and 120 min, respectively.

Atomic structures of Ruddlesden-Popper faults in LaCoO3/SrRuO3 multilayer thin films induced by epitaxial strain

NASA Astrophysics Data System (ADS)

Wang, Wei; Zhang, Hui; Shen, Xi; Guan, Xiangxiang; Yao, Yuan; Wang, Yanguo; Sun, Jirong; Yu, Richeng

2018-05-01

In this paper, scanning transmission electron microscopy is used to study the microstructures of the defects in LaCoO3/SrRuO3 multilayer films grown on the SrTiO3 substrates, and these films have different thickness of SrRuO3 (SRO) layers. Several types of Ruddlesden-Popper (R.P.) faults at an atomic level are found, and these chemical composition fluctuations in the growth process are induced by strain fields originating from the film-film and film-substrate lattice mismatches. Furthermore, we propose four types of structural models based on the atomic arrangements of the R.P. planar faults, which severely affect the functional properties of the films.

Photocatalytic CO2 reduction over SrTiO3: Correlation between surface structure and activity

NASA Astrophysics Data System (ADS)

Luo, Chao; Zhao, Jie; Li, Yingxuan; Zhao, Wen; Zeng, Yubin; Wang, Chuanyi

2018-07-01

Perovskite oxide SrTiO3 is a promising semiconductor photocatalyst for CO2 reduction, which has two possible chemical surfaces-TiO2-terminated and SrO-terminated surfaces. Up to now, the effect of chemical surface and its modification on CO2 adsorption, activation and sequential photocatalytic reduction is not established. In the work, SrTiO3, surface-Ti-rich SrTiO3 and Sr(OH)2-decorated SrTiO3 were prepared and their structural, surface, and optical properties and photocatalytic activity were explored. It is found that the absorption edge of surface-Ti-rich SrTiO3 shifted toward visible-light region as compared with that of the other two photocatalysts, which is attributed to the decreased Ti 3d ground-state level at the surface. Bicarbonate- (HCO3-) and bidentate carbonate-like (b-CO3=) species are the main species for CO2 adsorption on the surface-Ti-rich SrTiO3, whereas, besides HCO3- and b-CO3=, plenty of monodentate carbonate-like species (m-CO3=) that has relatively low reactivity is present on the SrTiO3 and Sr(OH)2-decorated photocatalysts. As a result, the surface-Ti-rich SrTiO3 exhibits the highest activity for CO2 reduction. Furthermore, although Sr(OH)2-decoration and SrO-terminated surfaces facilitate CO2 fixing, the produced surface species are attached to the weakly active Sr ions, giving rise to the lower reactivity. The present work might supply a guide for designing highly active perovskite-type semiconductors for photocatalysis.

Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jie; Morrow, Darien J.; Fu, Yongping

High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr 3) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO 3(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcomingmore » the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr 3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (10 4 cm s –1), and low defect density of 10 12 cm –3, which are comparable to those of CsPbBr 3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.« less

Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3)

DOE PAGES

Chen, Jie; Morrow, Darien J.; Fu, Yongping; ...

2017-09-05

High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr 3) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO 3(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcomingmore » the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr 3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (10 4 cm s –1), and low defect density of 10 12 cm –3, which are comparable to those of CsPbBr 3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.« less

Very high commutation quality factor and dielectric tunability in nanocomposite SrTiO 3 thin films with T c enhanced to >300 °C

DOE PAGES

Sangle, Abhijeet L.; Lee, Oon Jew; Kursumovic, Ahmed; ...

2018-02-05

We report on nanoengineered SrTiO 3–Sm2O 3 nanocomposite thin films with the highest reported values of commutation quality factor (CQF or K-factor) of >2800 in SrTiO 3 at room temperature. The films also had a large tunability of dielectric constant (49%), low tangent loss (tan δ = 0.01) and a Curie temperature for SrTiO 3 > 300 °C, making them very attractive for tunable RF applications. The enhanced properties originate from the unique nanostructure in the films, with <20 nm diameter strain-controlling Sm 2O 3 nanocolumns embedded in a SrTiO 3 matrix. Very large out-of-plane strains (up to 2.6%) andmore » high tetragonality (c/a) (up to 1.013) were induced in the SrTiO 3. Finally, the K-factor was further enhanced by adding 1 at% Sc 3+ (acceptor) dopant in SrTiO 3 to a value of 3300 with the tangent loss being ≤0.01 up to 1000 kV cm -1.« less

Very high commutation quality factor and dielectric tunability in nanocomposite SrTiO 3 thin films with T c enhanced to >300 °C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sangle, Abhijeet L.; Lee, Oon Jew; Kursumovic, Ahmed

We report on nanoengineered SrTiO 3–Sm2O 3 nanocomposite thin films with the highest reported values of commutation quality factor (CQF or K-factor) of >2800 in SrTiO 3 at room temperature. The films also had a large tunability of dielectric constant (49%), low tangent loss (tan δ = 0.01) and a Curie temperature for SrTiO 3 > 300 °C, making them very attractive for tunable RF applications. The enhanced properties originate from the unique nanostructure in the films, with <20 nm diameter strain-controlling Sm 2O 3 nanocolumns embedded in a SrTiO 3 matrix. Very large out-of-plane strains (up to 2.6%) andmore » high tetragonality (c/a) (up to 1.013) were induced in the SrTiO 3. Finally, the K-factor was further enhanced by adding 1 at% Sc 3+ (acceptor) dopant in SrTiO 3 to a value of 3300 with the tangent loss being ≤0.01 up to 1000 kV cm -1.« less

Understanding the interactions of CO 2 with doped and undoped SrTiO 3

DOE PAGES

Wu, Qiyuan; Cen, Jiajie; Goodman, Kenneth R.; ...

2016-06-17

SrTiO 3 and doped SrTiO 3 have a wide range of applications in different fields. For example, Rh-doped SrTiO 3 has been shown to have photocatalytic activity for both hydrogen production and CO 2 conversion. In this study, both undoped and Rh-doped SrTiO 3 were synthesized by hydrothermal and polymerizable complex methods. Different characterizations techniques including X-ray photoelectron spectroscopy (XPS), XRD, Raman, and UV/Vis spectroscopy were utilized to establish correlations between the preparation methods and the electronic/structural properties of Rh-doped SrTiO 3. The presence of dopants and oxygen vacancies substantially influenced the CO 2 interactions with the surface, as revealedmore » by the in situ infrared spectroscopic study. As a result, the presence of distinctly different adsorption sites was correlated to oxygen vacancies and oxidation states of Ti and Rh.« less

Sequentially evaporated thin Y-Ba-Cu-O superconductor films: Composition and processing effects

NASA Technical Reports Server (NTRS)

Valco, George J.; Rohrer, Norman J.; Warner, Joseph D.; Bhasin, Kul B.

1988-01-01

Thin films of YBa2Cu3O(7-beta) have been grown by sequential evaporation of Cu, Y, and BaF2 on SrTiO3 and MgO substrates. The onset temperatures were as high as 93 K while T sub c was 85 K. The Ba/Y ratio was varied from 1.9 to 4.0. The Cu/Y ratio was varied from 2.8 to 3.4. The films were then annealed at various times and temperatures. The times ranged from 15 min to 3 hr, while the annealing temperatures used ranged from 850 C to 900 C. A good correlation was found between transition temperature (T sub c) and the annealing conditions; the films annealed at 900 C on SrTiO3 had the best T sub c's. There was a weaker correlation between composition and T sub c. Barium poor films exhibitied semiconducting normal state resistance behavior while barium rich films were metallic. The films were analyzed by resistance versus temperature measurements and scanning electron microscopy. The analysis of the films and the correlations are reported.

Synchrotron X-ray studies of epitaxial ferroelectric thin films and nanostructures

NASA Astrophysics Data System (ADS)

Klug, Jeffrey A.

The study of ferroelectric thin films is a field of considerable scientific and technological interest. In this dissertation synchrotron x-ray techniques were applied to examine the effects of lateral confinement and epitaxial strain in ferroelectric thin films and nanostructures. Three materials systems were investigated: laterally confined epitaxial BiFeO3 nanostructures on SrTiO3 (001), ultra-thin commensurate SrTiO 3 films on Si (001), and coherently strained films of BaTiO3 on DyScO3 (110). Epitaxial films of BiFeO3 were deposited by radio frequency magnetron sputtering on SrRuO3 coated SrTiO 3 (001) substrates. Laterally confined nanostructures were fabricated using focused ion-beam processing and subsequently characterized with focused beam x-ray nanodiffraction measurements with unprecedented spatial resolution. Results from a series of rectangular nanostructures with lateral dimensions between 500 nm and 1 mum and a comparably-sized region of the unpatterned BiFeO3 film revealed qualitatively similar distributions of local strain and lattice rotation with a 2-3 times larger magnitude of variation observed in those of the nanostructures compared to the unpatterned film. This indicates that lateral confinement leads to enhanced variation in the local strain and lattice rotation fields in epitaxial BiFeO3 nanostructures. A commensurate 2 nm thick film of SrTiO3 on Si was characterized by the x-ray standing wave (XSW) technique to determine the Sr and Ti cation positions in the strained unit cell in order to verify strain-induced ferroelectricity in SrTiO3/Si. A Si (004) XSW measurement at 10°C indicated that the average Ti displacement from the midpoint between Sr planes was consistent in magnitude to that predicted by a density functional theory (DFT) calculated ferroelectric structure. The Ti displacement determined from a 35°C measurement better matched a DFT-predicted nonpolar structure. The thin film extension of the XSW technique was employed to measure the polar displacement of the Ba cations in a 50 nm thick coherently strained BaTiO3 film on DyScO3 (110). An analysis assuming a bulk-like ratio between the Ti and Ba displacements found that the polar shift of Ba cations was larger than in bulk BaTiO3, which was consistent with strain-induced enhancement of ferroelectric polarization in BaTiO3/DyScO3 (110).

Imaging and tuning polarity at SrTiO 3 domain walls

DOE PAGES

Frenkel, Yiftach; Haham, Noam; Shperber, Yishai; ...

2017-09-18

Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here in this paper, we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO 3/SrTiO 3 interface 2DEG at the nanoscale. In particular, SrTiO 3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO 3more » twin boundary and detect a change in LaAlO 3/SrTiO 3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO 3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO 3-based devices on the nanoscale.« less

Temperature controlled evolution of monoclinic to super-tetragonal phase of epitaxial BiFeO3 thin films on La0.67Sr0.33MnO3 buffered SrTiO3 substrate

NASA Astrophysics Data System (ADS)

Singh, Anar; Kaifeng, Dong; Chen, Jing-Sheng

2018-03-01

Epitaxial BiFeO3 thin films of 130nm were deposited by pulsed laser deposition (PLD) technique on La0.67Sr0.33MnO3 buffered SrTiO3 (001) substrate at various temperatures under different ambient oxygen pressures. Reciprocal space mapping reveals that, with decreasing temperature and oxygen pressure, the broadly reported monoclinic phase (MA) of BiFeO3 thin film initially transforms to a tetragonal phase (T1) with c/a =1.05 (1) in a narrow girth of deposition condition and then to a super-tetragonal phase (T2) with giant c/a = 1.24 (1), as confirmed by reciprocal space mapping using high resolution x-ray diffraction. The surface morphology of the films reveals the island growth of the BiFeO3 films deposited at low temperatures. We propose that the transformation from monoclinic to the super-tetragonal phase is essentially due to the manifestation of excess local strain as a result of the island growth. This study offers a recipe to grow the super-tetragonal phase of BiFeO3, with giant c/a =1.24 (1) which exhibits exceptionally large ferroelectric polarization, on ferromagnetic layer La0.67Sr0.33MnO3. This phase of BiFeO3 can be utilized for the ferroelectric control of magnetism at the interface of BiFeO3 and La0.67Sr0.33MnO3.

Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface.

PubMed

Zhang, Hui; Zhang, Hongrui; Yan, Xi; Zhang, Xuejing; Zhang, Qinghua; Zhang, Jing; Han, Furong; Gu, Lin; Liu, Banggui; Chen, Yuansha; Shen, Baogen; Sun, Jirong

2017-10-18

Two-dimensional electron gas (2DEG) at the perovskite oxide interface exhibits a lot of exotic properties, presenting a promising platform for the exploration of emergent phenomena. While most of the previous works focused on SrTiO 3 -based 2DEG, here we report on the fabrication of high-quality 2DEGs by growing an amorphous LaAlO 3 layer on a (001)-orientated KTaO 3 substrate, which is a 5d metal oxide with a polar surface, at a high temperature that is usually adopted for crystalline LaAlO 3 . Metallic 2DEGs with a Hall mobility as high as ∼2150 cm 2 /(V s) and a sheet carrier density as low as 2 × 10 12 cm -2 are obtained. For the first time, the gating effect on the transport process is studied, and its influence on spin relaxation and inelastic and elastic scattering is determined. Remarkably, the spin relaxation time can be strongly tuned by a back gate. It is reduced by a factor of ∼69 while the gate voltage is swept from -25 to +100 V. The mechanism that dominates the spin relaxation is elucidated.

Effect of strain on thermoelectric properties of SrTiO3: First-principles calculations

NASA Astrophysics Data System (ADS)

Zou, Daifeng; Liu, Yunya; Xie, Shuhong; Lin, Jianguo; Li, Jiangyu

2013-10-01

The electronic structures of strained SrTiO3 were investigated by using first-principles calculations, and the anisotropic thermoelectric properties of n-type SrTiO3 under biaxial strain were calculated on the base of the semi-classical Boltzmann transport theory. It was theoretically found that the in-plane and out-of-plane power factors of n-type SrTiO3 can be increased under compressive and tensile strains, respectively, and such dependence can be explained by the strain-induced redistribution of electrons. To further optimize the thermoelectric performance of n-type SrTiO3, the maximum power factors and the corresponding optimal n-type doping levels were evaluated.

Rational design of mixed ionic and electronic conducting perovskite oxides for solid oxide fuel cell anode materials: A case study for doped SrTiO3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suthirakun, Suwit; Xiao, Guoliang; Ammal, Salai Cheettu

2014-01-01

The effect of p- and n-type dopants on ionic and electronic conductivity of SrTiO3 based perovskites were investigated both computationally and experimentally. Specifically, we performed density functional theory (DFT) calculations of Na- and La-doped SrTiO3 and Na- and Nb-doped SrTiO3 systems. Constrained ab initio thermodynamic calculations were used to evaluate the phase stability and reducibility of doped SrTiO3 under both oxidizing and reducing synthesis conditions, as well as under anodic solid oxide fuel cell (SOFC) conditions. The density of states (DOS) of these materials was analyzed to study the effects of p- and n-doping on the electronic conductivity. Furthermore, Na-more » and La-doped SrTiO3 and Na- and Nb-doped SrTiO3 samples were experimentally prepared and the conductivity was measured to confirm our computational predictions. The experimental observations are in very good agreement with the theoretical predictions that doping n-doped SrTiO3 with small amounts of p-type dopants promotes both the ionic and electronic conductivity of the material. This doping strategy is valid independent of p- and n-doping site and permits the synthesis of perovskite based mixed ionic/electronic conductors.« less

Formation of a conducting LaAlO3/SrTiO3 interface studied by low-energy electron reflection during growth

NASA Astrophysics Data System (ADS)

van der Torren, A. J. H.; Liao, Z.; Xu, C.; Gauquelin, N.; Yin, C.; Aarts, J.; van der Molen, S. J.

2017-12-01

The two-dimensional electron gas occurring between the band insulators SrTiO3 and LaAlO3 continues to attract considerable interest, due to the possibility of dynamic control over the carrier density and due to ensuing phenomena such as magnetism and superconductivity. The formation of this conducting interface is sensitive to the growth conditions, but despite numerous investigations there are still questions about the details of the physics involved. In particular, not much is known about the electronic structure of the growing LaAlO3 layer at the growth temperature (around 800°C) in oxygen (pressure around 5 ×10-5 mbar), since analysis techniques at these conditions are not readily available. We developed a pulsed laser deposition system inside a low-energy electron microscope in order to study this issue. The setup allows for layer-by-layer growth control and in situ measurements of the angle-dependent electron reflection intensity, which can be used as a fingerprint of the electronic structure of the surface layers during growth. By using different substrate terminations and growth conditions we observe two families of reflectivity maps, which we can connect either to samples with an AlO2-rich surface and a conducting interface or to samples with a LaO-rich surface and an insulating interface. Our observations emphasize that substrate termination and stoichiometry determine the electronic structure of the growing layer, and thereby the conductance of the interface.

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film.

PubMed

Park, Jeongmin; Kang, Haeyong; Kang, Kyeong Tae; Yun, Yoojoo; Lee, Young Hee; Choi, Woo Seok; Suh, Dongseok

2016-03-09

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.

Transition from Reconstruction toward Thin Film on the (110) Surface of Strontium Titanate

PubMed Central

2016-01-01

The surfaces of metal oxides often are reconstructed with a geometry and composition that is considerably different from a simple termination of the bulk. Such structures can also be viewed as ultrathin films, epitaxed on a substrate. Here, the reconstructions of the SrTiO3 (110) surface are studied combining scanning tunneling microscopy (STM), transmission electron diffraction, and X-ray absorption spectroscopy (XAS), and analyzed with density functional theory calculations. Whereas SrTiO3 (110) invariably terminates with an overlayer of titania, with increasing density its structure switches from n × 1 to 2 × n. At the same time the coordination of the Ti atoms changes from a network of corner-sharing tetrahedra to a double layer of edge-shared octahedra with bridging units of octahedrally coordinated strontium. This transition from the n × 1 to 2 × n reconstructions is a transition from a pseudomorphically stabilized tetrahedral network toward an octahedral titania thin film with stress-relief from octahedral strontia units at the surface. PMID:26954064

Interplay between current driven ferromagnetism in charge ordered antiferromagnetic Pr0.5Ca0.5MnO3 and superconducting YBa2Cu3O7-δ thin film multilayer

NASA Astrophysics Data System (ADS)

Baisnab, Dipak Kumar; Sardar, Manas; Amaladass, E. P.; Vaidhyanathan, L. S.; Baskaran, R.

2018-07-01

Thin film multilayer heterostructure of alternate YBa2Cu3O7-δ (YBCO) and Pr0.5Ca0.5MnO3 (PCMO) with thickness of each layer ∼60 nm has been deposited on (100) oriented SrTiO3 substrate by Pulsed Laser Deposition technique. A half portion of the base YBCO layer was masked in situ using mechanical shadow mask and in the remaining half portion, five alternate layers of PCMO and YBCO thin films were deposited. Magnetoresistance measurements were carried out under externally applied magnetic field and injection current. A noticeable damped oscillation of the superconducting transition temperature (TC) of this multilayer with respect to magnetic field is seen. Curiously, the field at which the first minimum in TC occurs, decreases as an injection current is driven perpendicular/parallel to the multilayers. Both these phenomena indicate that ferromagnetic correlation can be induced in antiferromagnetic PCMO thin films by (1) external magnetic field, or (2) injection current. While (1) is well researched, our study indicates that ferromagnetism can be induced by small amount of current in PCMO thin films. This unusual behavior points towards the strongly correlated nature of electrons in PCMO.

Effect of dipolar fields, surface termination, and surface orientation on photochemical reactions on transition metal oxides

NASA Astrophysics Data System (ADS)

Giocondi, Jennifer Lynn

Experiments have been conducted to determine the effects of dipolar fields, surface termination, and surface orientation on the photochemical reactivity of several transition metal oxides. These compounds include BaTiO3, SrTiO3, BaTi4O9, Sr2Nb2O 7, and Sr2Ta2O7 which were studied as polycrystalline ceramics, single crystals, micron-sized faceted particles, or some combination of these forms. The reduction of Ag+ from an aqueous AgNO3 solution (Ag0 product) and the oxidation of Pb2+ from an aqueous lead acetate solution (PbO 2 product) were selected as probe reactions because they leave insoluble products on the oxide surfaces. The reactivity of ferroelectric BaTiO3 was dominated by the effect of dipolar fields on the transport of photogenerated charge carriers. Silver was reduced on domains with a positive surface charge while lead was oxidized on domains with a negative surface charge. This reactivity implies that the dipolar field in individual domains drives photogenerated charge carriers to oppositely charged surfaces. This reaction mechanism results in a physical separation of the photogenerated charge carriers and the locations of the oxidation and reduction half reactions on the catalyst surface. Experiments performed on polycrystalline ceramics, single crystals, and micron-sized particles all showed this domain specific reactivity. SrTiO3 has the ideal cubic perovskite structure from which the tetragonally distorted ferroelectric BaTiO3 phase is derived. Polished and annealed surfaces of randomly oriented grain surfaces were bound by some combination of the following three planes: {110}, {111}, and a complex facet inclined approximately 24° from {100}. Surfaces with the complex {100} facet were found to be the most active for Ag reduction. Single crystal studies also showed that the nonpolar (100) surface is the most reactive and that the composition of the termination layer does not influence this reaction. However, the polar (111) and (110) surfaces had a non-uniform distribution of reaction products. For these orientations, the location of the reduction and oxidation reactions is determined by the chemical and charge terminations of the different terraces or facets. The reactivity for silver reduction on the faceted particles is ranked as (100) > (111) > (110) while the (100) surface was least reactive for lead oxidation. Overall, these results show that the photochemical reactivity of SrTiO3 is anisotropic and that on polar surfaces, dipolar fields arising from charged surface domains influence the transport of photogenerated charge carriers and promote spatially selective oxidation and reduction reactions. (Abstract shortened by UMI.)

Fabrication of patterned single-crystal SrTiO3 thin films by ion slicing and anodic bonding

NASA Astrophysics Data System (ADS)

Lee, Yoo Seung; Djukic, Djordje; Roth, Ryan M.; Laibowitz, Robert; Izuhara, Tomoyuki; Osgood, Richard M.; Bakhru, Sasha; Bakhru, Hassaram; Si, Weidong; Welch, David

2006-09-01

A new technique for directly fabricating patterned thin films (<1μm thick) of fully single-crystal strontium titanate uses deep H+ implantation into the oxide sample, followed by anodic bonding of the sample to a Pyrex or Pyrex-on-Si substrate. The dielectric properties and crystal structure of such thin films are characterized and are found to be essentially those of the bulk single crystal.

Ferromagnetism in tetragonally distorted LaCoO3 thin films

NASA Astrophysics Data System (ADS)

Mehta, Virat Vasav; Liberati, Marco; Wong, Franklin J.; Chopdekar, Rajesh Vilas; Arenholz, Elke; Suzuki, Yuri

2009-04-01

Thin films of epitaxial LaCoO3 were synthesized on SrTiO3 and (La ,Sr)(Al,Ta)O3 substrates, varying the oxygen background pressure in order to evaluate the impact of epitaxial growth as well as oxygen vacancies on the long range magnetic order. The epitaxial constraints from the substrate impose a tetragonal distortion compared to the bulk form. X-ray absorption and x-ray magnetic circular dichroism measurements confirmed that the ferromagnetism arises from the Co ions and persists through the entire thickness of the film. It was found that for the thin films to show ferromagnetic order they have to be grown under the higher oxygen pressures. A correlation of the structure and magnetism suggests that the tetragonal distortions induce the ferromagnetism.

Multi-level resistive switching behaviors and retention characteristics in ZnO/Nb:SrTiO3 heterojunction

NASA Astrophysics Data System (ADS)

Ren, Yong; Li, Jiachen; Zhang, Weifeng; Jia, Caihong

2017-10-01

Epitaxial ZnO thin films were grown on SrTiO3:Nb (NSTO) substrates by rf magnetron sputtering method. The multi-level resistance states were observed by applying different amplitudes and/or polarities of voltage pulses, which is supposed to be related to the drift of oxygen vacancies. Furthermore, the decay of retention is also corresponding to the migration of oxygen vacancies. The retention and cycle stability implies that the ZnO/Nb:SrTiO3 heterojunctions are promising for high density memory application.

Influence of excess SrO on the thermoelectric properties of heavily doped SrTiO3 ceramics

NASA Astrophysics Data System (ADS)

Wang, Yifeng; Wan, Chunlei; Zhang, Xiaoyan; Shen, Liming; Koumoto, Kunihito; Gupta, Arunava; Bao, Ningzhong

2013-05-01

The effects of excess SrO on the thermoelectric properties of n-type SrTiO3 have been investigated through a comparative study of different polycrystalline ceramic samples. These include Gd-doped SrTiO3 with varying SrO, nominally in the form of Ruddlesden-Popper phase of SrO(SrTiO3)n with n = 5, 10, and 20, and previously reported analogues with n = 1, 2, and ∞ (i.e., stoichiometric SrTiO3). As compared with stoichiometric SrTiO3, with increasing SrO excess (i.e., decreasing n value), the electrical conductivity is found to decrease more substantially than the thermal conductivity, while the Seebeck coefficient remains almost unaffected with n in the range of 5-20.

Magnetic Interactions at the Nanoscale in Trilayer Titanates

NASA Astrophysics Data System (ADS)

Cao, Yanwei; Yang, Zhenzhong; Kareev, M.; Liu, Xiaoran; Meyers, D.; Middey, S.; Choudhury, D.; Shafer, P.; Guo, Jiandong; Freeland, J. W.; Arenholz, E.; Gu, Lin; Chakhalian, J.

2016-02-01

We report on the phase diagram of competing magnetic interactions at the nanoscale in engineered ultrathin trilayer heterostructures of LaTiO3 /SrTiO3/YTiO3 , in which the interfacial inversion symmetry is explicitly broken. Combined atomic layer resolved scanning transmission electron microscopy with electron energy loss spectroscopy and electrical transport have confirmed the formation of a spatially separated two-dimensional electron liquid and high density two-dimensional localized magnetic moments at the LaTiO3 /SrTiO3 and SrTiO3 /YTiO3 interfaces, respectively. Resonant soft x-ray linear dichroism spectroscopy has demonstrated the presence of orbital polarization of the conductive LaTiO3 /SrTiO3 and localized SrTiO3 /YTiO3 electrons. Our results provide a route with prospects for exploring new magnetic interfaces, designing a tunable two-dimensional d -electron Kondo lattice, and potential spin Hall applications.

Preparation of Cu-loaded SrTiO3 nanoparticles and their photocatalytic activity for hydrogen evolution from methanol aqueous solution

NASA Astrophysics Data System (ADS)

Bui, Duc-Nguyen; Mu, Jin; Wang, Lei; Kang, Shi-Zhao; Li, Xiangqing

2013-06-01

Cu-loaded SrTiO3 nanoparticles (Cu-SrTiO3) were prepared using a simple in situ photo-deposition method and their photocatalytic activity for hydrogen evolution from methanol aqueous solution was evaluated. The results characterized with XRD, TEM, XPS and EDX indicated that the as-synthesized sample was composed of metallic Cu and cubic SrTiO3, and the metallic Cu was homogeneously loaded on the surface of SrTiO3 nanoparticles. Under UV light irradiation, Cu-SrTiO3 displayed much higher photocatalytic activity for hydrogen evolution and excellent stability in comparison with pure SrTiO3 nanoparticles. The results further confirmed that the efficient separation of photogenerated electron/hole pairs was critical for the enhanced photocatalytic activity of Cu-SrTiO3. Moreover, the rate of hydrogen evolution of 0.5 wt.% Cu-SrTiO3 is comparable with that of 0.5 wt.% Pt-SrTiO3 photocatalyst under optimum conditions, implying that the metallic Cu is an efficient alternative to Pt as a co-catalyst on SrTiO3. The high photocatalytic activity, low cost and chemical stability mean that the Cu-loaded SrTiO3 is a potential catalyst for the photocatalytic hydrogen evolution from methanol aqueous solution.

Enhanced Output Power of PZT Nanogenerator by Controlling Surface Morphology of Electrode.

PubMed

Jung, Woo-Suk; Lee, Won-Hee; Ju, Byeong-Kwon; Yoon, Seok-Jin; Kang, Chong-Yun

2015-11-01

Piezoelectric power generation using Pb(Zr,Ti)O3(PZT) nanowires grown on Nb-doped SrTiO3(nb:STO) substrate has been demonstrated. The epitaxial PZT nanowires prepared by a hydrothermal method, with a diameter and length of approximately 300 nm and 7 μm, respecively, were vertically aligned on the substrate. An embossed Au top electrode was applied to maximize the effective power generation area for non-uniform PZT nanowires. The PZT nanogenerator produced output power density of 0.56 μW/cm2 with a voltage of 0.9 V and current of 75 nA. This research suggests that the morphology control of top electrode can be useful to improve the efficiency of piezoelectric power generation.

Phase-field simulations of thickness-dependent domain stability in PbTiO3 thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheng, Guang; Hu, Jia-Mian; Zhang, Jinxian

Phase-field approach is used to predict the thickness effect on the domain stability in ferroelectric thin films. The strain relaxation mechanism and critical thickness for dislocation formation from both Matthews-Blakeslee (MB) and People-Bean (PB) models are employed. Thickness - strain domain stability diagrams are obtained for PbTiO3 thin films under different strain relaxation models. The relative domain fractions as a function of film thickness are also calculated and compared with experiment measurements in PbTiO3 thin films grown on SrTiO3 and KTaO3 substrates.

A facile in-situ hydrothermal synthesis of SrTiO3/TiO2 microsphere composite

NASA Astrophysics Data System (ADS)

Wang, Hongxing; Zhao, Wei; Zhang, Yubo; Zhang, Shimeng; Wang, Zihao; Zhao, Dan

2016-06-01

TiO2 was successfully used as sacrificed template to synthesise SrTiO3/TiO2 microsphere composite via an in-situ hydrothermal process. The diameter of SrTiO3/TiO2 microsphere was about 700 nm with the same size of the template, and all of the microspheres were in good dispersity. The optimized reaction parameters for the phase and morphology of the as-synthesized samples were investigated. The results showed the SrTiO3/TiO2 microsphere can be synthesized at 170 °C when the concentration of sodium hydroxide was 0.1 M. Lower hydrothermal temperature hampered the formation of the SrTiO3/TiO2 composite, the higher alkali concentration, however, will destroy the morphology of products. The formation mechanism of SrTiO3/TiO2 microsphere composite was proposed and the photocatalytic properties of the samples were characterized using methylene blue solution as the pollutant under the UV light irradiation. The results indicated the proper OH- concentration will provide a channel for Sr2+ to react with Ti4+ located in the template and form the SrTiO3/TiO2 composite, and those with micro-scaled spherical morphology exhibited good photocatalytic activities.

Phase transitions and domain structures in multiferroics

NASA Astrophysics Data System (ADS)

Vlahos, Eftihia

2011-12-01

Thin film ferroelectrics and multiferroics are two important classes of materials interesting both from a scientific and a technological prospective. The volatility of lead and bismuth as well as environmental issues regarding the toxicity of lead are two disadvantages of the most commonly used ferroelectric random access memory (FeRAM) materials such as Pb(Zr,Ti)O3 and SrBi2Ta2O9. Therefore lead-free thin film ferroelectrics are promising substitutes as long as (a) they can be grown on technologically important substrates such as silicon, and (b) their T c and Pr become comparable to that of well established ferroelectrics. On the other hand, the development of functional room temperature ferroelectric ferromagnetic multiferroics could lead to very interesting phenomena such as control of magnetism with electric fields and control of electrical polarization with magnetic fields. This thesis focuses on the understanding of material structure-property relations using nonlinear optical spectroscopy. Nonlinear spectroscopy is an excellent tool for probing the onset of ferroelectricity, and domain dynamics in strained ferroelectrics and multiferroics. Second harmonic generation was used to detect ferroelectricity and the antiferrodistortive phase transition in thin film SrTiO3. Incipient ferroelectric CaTiO3 has been shown to become ferroelectric when strained with a combination of SHG and dielectric measurements. The tensorial nature of the induced nonlinear polarization allows for probing of the BaTiO3 and SrTiO3 polarization contributions in nanoscale BaTiO3/SrTiO3 superlattices. In addition, nonlinear optics was used to demonstrate ferroelectricity in multiferroic EuTiO3. Finally, confocal SHG and Raman microscopy were utilized to visualize polar domains in incipient ferroelectric and ferroelastic CaTiO3.

Growth of Pb(Ti,Zr)O 3 thin films by metal-organic molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Avrutin, V.; Liu, H. Y.; Izyumskaya, N.; Xiao, B.; Özgür, Ü.; Morkoç, H.

2009-02-01

Single-crystal Pb(Zr xTi 1-x)O 3 thin films have been grown on (0 0 1) SrTiO 3 and SrTiO 3:Nb substrates by molecular beam epitaxy using metal-organic source of Zr and two different sources of reactive oxygen—RF plasma and hydrogen-peroxide sources. The same growth modes and comparable structural properties were observed for the films grown with both oxygen sources, while the plasma source allowed higher growth rates. The films with x up to 0.4 were single phase, while attempts to increase x beyond gave rise to the ZrO 2 second phase. The effects of growth conditions on growth modes, Zr incorporation, and phase composition of the Pb(Zr xTi 1-x)O 3 films are discussed. Electrical and ferroelectric properties of the Pb(Zr xTi 1-x)O 3 films of ~100 nm in thickness grown on SrTiO 3:Nb were studied using current-voltage, capacitance-voltage, and polarization-field measurements. The single-phase films show low leakage currents and large breakdown fields, while the values of remanent polarization are low (around 5 μC/cm 2). It was found that, at high sweep fields, the contribution of the leakage current to the apparent values of remanent polarization can be large, even for the films with large electrical resistivity (˜10 8-10 9 Ω cm at an electric filed of 1 MV/cm). The measured dielectric constant ranges from 410 to 260 for Pb(Zr 0.33Ti 0.67)O 3 and from 313 to 213 for Pb(Zr 0.2Ti 0.8)O 3 in the frequency range from 100 to 1 MHz.

Study of structure and properties of oxide electrode materials (Fe3O4, AZO, SRO) and their device applications

NASA Astrophysics Data System (ADS)

Olga, Chichvarina

Ferroelectric thin film capacitor heterostructures have attracted considerable attention in the last decade because of their potential applications in piezoelectric sensors, actuators, power generators and non-volatile memory devices. Strongly correlated all-perovskite oxide heterojunctions are of a particular interest, as their material properties (electronic, structural, magnetic and optical, etc.) can be tuned via doping, interface effect, applied electrical field, and formation of two-dimensional electron gas (2DEG), etc. The right selection of electrode material for this type of capacitor-like structures may modify and enhance the performance of a device, as the electrode/barrier layer interfaces can significantly influence its macroscopic properties. Although there is a number of reports on the effect of electrode interfaces on the properties of PZT capacitors deposited on SRO buffered STO substrate, very little is known about Fe3O4/PZT and AZO/PZT electrode interfaces. This thesis comprises two parts. In the first part we present a systematic study of the structural, transport, magnetic and optical properties of oxide thin films: AZO, Fe3O4 and SRO. These monolayers were fabricated via pulsed laser deposition technique on quartz, MgO and STO substrates respectively. The second part of this thesis elucidates the behaviour of these three oxides as electrode components in PZT/SRO/STO heteroepitaxial structures. The highlights of the work are summarized below: 1) Zinc-blende (ZB) phase of ZnO was predicted to possess higher values of conductivity and higher doping efficiency compared to its wurzite counterpart and thus has greater chances of facilitating the fabrication of ZnO-electrode-based devices. However, zinc-blende is a metastable phase, and it is challenging to obtain single-phase ZB. To tackle this challenge we tuned parameters such-as film thickness, substrate and annealing effect, and achieved a ZB phase of Ti-doped ZnO, ZB-(Zn1-xTix)O thin film. An in-depth systematic study on ZnO zinc-blende formation and the underlying mechanism is presented in Chapter 3 of this work. In addition, this study also looked into the effect of ZnO doping with hydrogen and aluminum. 2) Perpendicular magnetic anisotropy in electrodes is an essential property for the development of certain types of random access memories. In order to study magnetic anisotropy of ferroelectric Fe3O4, we fabricated Fe3O4 epitaxial films of various thicknesses on MgO substrates with different orientations. Fe3O4 thin films on MgO (111)-oriented substrates showed prominent out-of-plane magnetic anisotropy. With the purpose of exploring the mechanism behind this phenomenon, we investigated the role of substrate orientation and film thickness dependency. It was shown that by using the substrates of different orientations and thereby, altering the substrate lattice strain the anisotropy manipulation in Fe3O4, thin films is possible. 3) The last part of the thesis focuses on the performance of AZO/PZT/SRO/STO and Fe3O4/PZT/SRO/STO heterostructures. High quality crystalline films with sharp interfaces and rms surface roughness 1 nm were achieved. Pronounced bipolar switching was observed in both heterostructures. More importantly, it was found that physical properties of Fe3O 4/Pb(Zr0.52Ti0.48)O3/SrRuO3/SrTiO 3 heterostructure can be modulated by introducing Fe2+ and Fe3+ cations into Pb(Zr0.52Ti0.48)O 3 active layer. The sample showed MR signal of 3% after being set into low-resistance state, attributing to the formation of Fe-related semiconductor-like channel in the Pb(Zr0.52Ti0.48)O3 layer. After resetting to high-resistance state, MR signal disappeared due to the rupture of the channel. The results paves the way to the realization of a nonvolatile multiple states Pb(ZrTi)O 3-based hybrid memory.

Carrier Localization in Confined Vanadate Superlattices

NASA Astrophysics Data System (ADS)

Eaton, Craig; Zhang, Lei; Engel-Herbert, Roman

2015-03-01

Perovskite oxide heterostructures have attracted attention due to the wealth of phenomena emerging at the interface, as well as the presence of strong electron correlations with potential applications as active electronic material for logic application utilizing the metal-to-insulator transition. Successful monolithic integration of perovskite oxides with Si makes them an ideal material choice. Here we present the growth of cubic SrTiO3/SrVO3/SrTiO3 heterostructures on (La0.3Sr0.7) (Al0.65Ta0.35) O3 substrates and orthorhombically distorted CaTiO3/CaVO3/CaTiO3 heterostructures on (LaSrAlTa4) O3 substrates by hybrid molecular beam epitaxy, where alkaline earth metals were supplied using conventional effusion cells and the transition metals from the metal-organic precursor titanium-isopropoxide and vanadium oxi-tri-isopropoxide. Here, the interfaces are non-polar and carrier confinement in the correlated vanadate metals (d1 configuration, 1 electron per unit cell) is achieved using insulating titanates as barrier material. Growth challenges associated with optimizing conditions for cation and oxygen stoichiometry are discussed. Confined structures down to 2 ML have been studied to demonstrate the potential for tuning incipient 2D Mott transition from 3D correlated metal. Room temperature hall measurements revealed carrier concentration in SrVO3 films are 2 × 1022 cm-3 in thick films and decreases to 8 × 1020 cm-3 at 3 ML confinement, revealing the onset of strong carrier localization. Direct comparison between SrVO3 and CaVO3 structures are presented to elucidate the role of dimensional confinement and structural distortion.

Local optical control of ferromagnetism and chemical potential in a topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeats, Andrew L.; Mintun, Peter J.; Pan, Yu

Many proposed experiments involving topological insulators (TIs) require spatial control over time-reversal symmetry and chemical potential. We demonstrate reconfigurable micron-scale optical control of both magnetization (which breaks time-reversal symmetry) and chemical potential in ferromagnetic thin films of Cr-(Bi,Sb) 2Te 3 grown on SrTiO 3. By optically modulating the coercivity of the films, we write and erase arbitrary patterns in their remanent magnetization, which we then image with Kerr microscopy. Additionally, by optically manipulating a space charge layer in the underlying SrTiO 3 substrates, we control the local chemical potential of the films. This optical gating effect allows us to writemore » and erase p-n junctions in the films, which we study with photocurrent microscopy. Both effects are persistent and may be patterned and imaged independently on a few-micron scale. As a result, dynamic optical control over both magnetization and chemical potential of a TI may be useful in efforts to understand and control the edge states predicted at magnetic domain walls in quantum anomalous Hall insulators.« less

Local optical control of ferromagnetism and chemical potential in a topological insulator

DOE PAGES

Yeats, Andrew L.; Mintun, Peter J.; Pan, Yu; ...

2017-09-12

Many proposed experiments involving topological insulators (TIs) require spatial control over time-reversal symmetry and chemical potential. We demonstrate reconfigurable micron-scale optical control of both magnetization (which breaks time-reversal symmetry) and chemical potential in ferromagnetic thin films of Cr-(Bi,Sb) 2Te 3 grown on SrTiO 3. By optically modulating the coercivity of the films, we write and erase arbitrary patterns in their remanent magnetization, which we then image with Kerr microscopy. Additionally, by optically manipulating a space charge layer in the underlying SrTiO 3 substrates, we control the local chemical potential of the films. This optical gating effect allows us to writemore » and erase p-n junctions in the films, which we study with photocurrent microscopy. Both effects are persistent and may be patterned and imaged independently on a few-micron scale. As a result, dynamic optical control over both magnetization and chemical potential of a TI may be useful in efforts to understand and control the edge states predicted at magnetic domain walls in quantum anomalous Hall insulators.« less

Influence of Strain on the Thermoelectric Properties of electron-doped SrTiO3 Thin Films

NASA Astrophysics Data System (ADS)

Sarantopoulos, Alexandros; Ferreiro-Vila, Elias; Magen, Cesar; Aguirre, Myriam H.; Pardo, Victor; Rivadulla, Francisco

2015-03-01

The discovery of a two dimensional electron gas with high mobility at the interface between insulating LaAlO3 / SrTiO3 (LAO/STO) opened the possibility of fabricating functional devices based on this interfacial effect. Therefore, it is important to study the influence of the growth parameters on the properties of the constituent materials. Here, we demonstrate that the thermoelectric properties of epitaxial thin films of Nb:STO can be finely tuned by adjusting the growth conditions in a PLD system. By growing the sample on different substrates, we demonstrate that the amount of vacancies depends on the degree of epitaxial compressive stress. The vacancies produced lead to impurity scattering at low temperatures. We show that the magnetoresistance response, and non-linear behavior of the Hall effect, characteristic of LAO/STO interfaces, can be reproduced in thin films of Nb:STO with a controlled number of vacancies. Moreover, we show that the Seebeck coefficient is a valid tool to obtain information about the degeneracy of the electronic band structure. We acknowledge support from the ERC 2D Therms project.

Real-time monitoring of the structure of ultrathin Fe3O4 films during growth on Nb-doped SrTiO3(001)

NASA Astrophysics Data System (ADS)

Kuschel, O.; Spiess, W.; Schemme, T.; Rubio-Zuazo, J.; Kuepper, K.; Wollschläger, J.

2017-07-01

In this work, thin magnetite films were deposited on SrTiO3 via reactive molecular beam epitaxy at different substrate temperatures. The growth process was monitored in-situ during deposition by means of x-ray diffraction. While the magnetite film grown at 400 °C shows a fully relaxed vertical lattice constant already in the early growth stages, the film deposited at 270 °C exhibits a strong vertical compressive strain and relaxes towards the bulk value with increasing film thickness. Furthermore, a lateral tensile strain was observed under these growth conditions although the inverse behavior is expected due to the lattice mismatch of -7.5%. Additionally, the occupancy of the A and B sublattices of magnetite with tetrahedral and octahedral sites was investigated showing a lower occupancy of the A sites compared to an ideal inverse spinel structure. The occupation of A sites decreases for a higher growth temperature. Thus, we assume a relocation of the iron ions from tetrahedral sites to octahedral vacancies forming a deficient rock salt lattice.

Metal-organic chemical vapor deposition of cerium oxide, gallium-indium-oxide, and magnesium oxide thin films: Precursor design, film growth, and film characterization

NASA Astrophysics Data System (ADS)

Edleman, Nikki Lynn

A new class of volatile, low-melting, fluorine-free lanthanide metal-organic chemical vapor deposition (MOCVD) precursors has been developed. The neutral, monomeric cerium, neodymium, gadolinium, and erbium complexes are coordinatively saturated by a versatile, multidentate, ether-functionalized beta-ketoiminate ligand, and complex melting point and volatility characteristics can be tuned by altering the alkyl substituents on the ligand periphery. Direct comparison with lanthanide beta-diketonate complexes reveals that the present precursor class is a superior choice for lanthanide oxide MOCVD. Epitaxial CeO 2 buffer layer films have been grown on (001) YSZ substrates by MOCVD at significantly lower temperatures than previously reported using one of the newly developed cerium precursors. High-quality YBCO films grown on these CeO2 buffer layers by POMBE exhibit very good electrical transport properties. The cerium complex has therefore been explicitly demonstrated to be a stable and volatile precursor and is attractive for low-temperature growth of coated conductor multilayer structures by MOCVD. Gallium-indium-oxide thin films (GaxIn2-xO 3), x = 0.0˜1.1, have been grown by MOCVD using the volatile metal-organic precursors In(dpm)3 and Ga(dpm)3. The films have a homogeneously Ga-substituted, cubic In2O3 microstructure randomly oriented on quartz or heteroepitaxial on (100) YSZ single-crystal substrates. The highest conductivity of the as-grown films is found at x = 0.12. The optical transmission window and absolute transparency of the films rivals or exceeds that of the most transparent conductive oxides known. Reductive annealing results in improved charge transport characteristics with little loss of optical transparency. No significant difference in electrical properties is observed between randomly oriented and heteroepitaxial films, thus arguing that carrier scattering effects at high-angle grain boundaries play a minor role in the film conductivity mechanism. The synthesis and characterization of a new magnesium MOCVD precursor, Mg(dpm)2(TMEDA) is detailed. It is shown that the donating ligand TMEDA prevents oligomerization and subsequent volatility depression as observed in the commonly used [Mg(dpm)2]2. The superiority of Mg(dpm)2(TMEDA) as an MOCVD precursor is explicitly demonstrated by growth of epitaxial MgO thin films on single-crystal SrTiO3 substrates.

Molecular beam epitaxial growth, transmittance and photoluminescence spectra of zinc-blende CdTe thin films with high-quality on perovskite SrTiO3 (1 1 1) substrates

NASA Astrophysics Data System (ADS)

Song, Kun; Zhu, Xuanting; Tang, Kai; Bai, W.; Zhu, Liangqing; Yang, Jing; Zhang, Yuanyuan; Tang, Xiaodong; Chu, Junhao

2018-03-01

High-crystalline quality CdTe thin films are grown on the largely lattice-mismatched SrTiO3 (STO) (1 1 1) substrates by molecular beam epitaxy. A transformation from a three dimensional regime to a two dimensional one is observed by the reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The formation of an elastic deformation CdTe layer on STO (1 1 1), namely a pseudomorphic growth mode with a critical thickness of ∼40 nm, is supported by the RHEED, AFM and X-ray diffraction. Crystal structures and epitaxial relationships of CdTe epitaxial films on STO (1 1 1) are characterized by 2θ-ω scans and reciprocal space mapping. Two strong absorption peaks at the energies of ∼1.621 eV and ∼1.597 eV at 5 K are clearly observed for a ∼120 nm thick CdTe epitaxial film, which are proposed to be ascribed to the strained and unstrained epitaxial CdTe layers, respectively. Moreover, the presence of the exciton band while the absence of deep level defect states for the ∼120 nm thick CdTe film characterized by the temperature dependent photoluminescence spectra further supports the high-crystalline quality.

Nickel sulfide/graphitic carbon nitride/strontium titanate (NiS/g-C3N4/SrTiO3) composites with significantly enhanced photocatalytic hydrogen production activity.

PubMed

Luo, Xiu-Li; He, Gang-Ling; Fang, Yue-Ping; Xu, Yue-Hua

2018-05-15

NiS/g-C 3 N 4 /SrTiO 3 (NS/CN/STO) composites were prepared using a facile hydrothermal method. The synergistic effect of g-C 3 N 4 /SrTiO 3 (CN/STO) heterojunction and NiS cocatalyst enhanced the photocatalytic hydrogen evolution activity of NS/CN/STO. A hydrogen production rate of 1722.7 μmol h -1  g -1 was obtained when the 2%NiS/20%g-C 3 N 4 /SrTiO 3 (2NS/20CN/STO) was used for the photocatalytic hydrogen evolution in the presence of methanol used as a sacrificial agent under UV-vis light irradiation; the photocatalytic hydrogen production rate of 2NS/20CN/STO is 32.8, 8.9 and 4.2 times the value of that obtained with pure g-C 3 N 4 , SrTiO 3 and 20%g-C 3 N 4 /SrTiO 3 (20CN/STO), respectively. Moreover, in photoelectrochemical investigations when compared with 20CN/STO, SrTiO 3 and g-C 3 N 4 , 2NS/20CN/STO exhibited significant photocurrent enhancement. The heterojunction and cocatalyst in NS/CN/STO improved the charge separation efficiency and the lifetime of the charge carriers, leading to the enhanced generation of electrons for photocatalytic hydrogen production. Copyright © 2018 Elsevier Inc. All rights reserved.

Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO 3-buffered ferroelectric BaTiO 3 film on GaAs

DOE PAGES

Qiao, Q.; Zhang, Y.; Contreras-Guerrero, Rocio; ...

2015-11-16

The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO 3 thin filmsgrown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO 3 grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. We also use a combination of aberration-corrected scanning transmission electron microscopy andmore » first-principles density functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectricpolarization of a BaTiO 3 thin filmgrown on GaAs. Moreover, we demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO 3), and propose that the presence of surface charge screening allows the formation of switchable domains.« less

Effect of epitaxial strain on ferroelectric polarization in multiferroic BiFeO3 films

NASA Astrophysics Data System (ADS)

Kim, Dae Ho; Lee, Ho Nyung; Biegalski, Michael D.; Christen, Hans M.

2008-01-01

Multiferroic BiFeO3 epitaxial films with thicknesses ranging from 40to960nm were grown by pulsed laser deposition on SrTiO3 (001) substrates with SrRuO3 bottom electrodes. X-ray characterization shows that the structure evolves from angularly distorted tetragonal with c /a≈1.04 to more bulklike distorted rhombohedral (c/a≈1.01) as the strain relaxes with increasing thickness. Despite this significant structural evolution, the ferroelectric polarization along the body diagonal of the distorted pseudocubic unit cells, as calculated from measurements along the normal direction, barely changes.

Modulation of superconducting transition temperature in LaAlO3/SrTiO3 by SrTiO3 structural domains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noad, Hilary; Moler, Kathryn

2018-01-01

The tetragonal domain structure in SrTiO3 (STO) is known to modulate the normal-state carrier density in LaAlO3/SrTiO3 (LAO/STO) heterostructures, among other electronic properties, but the effect of STO domains on the superconductivity in LAO/STO has not been fully explored. Using a scanning SQUID susceptometer microscope to map the superconducting response as a function of temperature in LAO/STO, we find that the superconducting transition temperature is spatially inhomogeneous and modulated in a pattern that is characteristic of structural domains in the STO.

Selection rules for Cooper pairing in two-dimensional interfaces and sheets

NASA Astrophysics Data System (ADS)

Scheurer, Mathias S.; Agterberg, Daniel F.; Schmalian, Jörg

2017-12-01

Thin sheets deposited on a substrate and interfaces of correlated materials offer a plethora of routes towards the realization of exotic phases of matter. In these systems, inversion symmetry is broken which strongly affects the properties of possible instabilities—in particular in the superconducting channel. By combining symmetry and energetic arguments, we derive general and experimentally accessible selection rules for Cooper instabilities in noncentrosymmetric systems, which yield necessary and sufficient conditions for spontaneous time-reversal-symmetry breaking at the superconducting transition and constrain the orientation of the triplet vector. We discuss in detail the implications for various different materials. For instance, we conclude that the pairing state in thin layers of Sr2RuO4 must, as opposed to its bulk superconducting state, preserve time-reversal symmetry with its triplet vector being parallel to the plane of the system. All triplet states of this system allowed by the selection rules are predicted to display topological Majorana modes at dislocations or at the edge of the system. Applying our results to the LaAlO3/SrTiO3 heterostructures, we find that while the condensates of the (001) and (110) oriented interfaces must be time-reversal symmetric, spontaneous time-reversal-symmetry breaking can only occur for the less studied (111) interface. We also discuss the consequences for thin layers of URu2Si2 and UPt3 as well as for single-layer FeSe. On a more general level, our considerations might serve as a design principle in the search for time-reversal-symmetry-breaking superconductivity in the absence of external magnetic fields.

Electric-field-induced local and mesoscale structural changes in polycrystalline dielectrics and ferroelectrics

DOE PAGES

Usher, Tedi -Marie; Levin, Igor; Daniels, John E.; ...

2015-10-01

In this study, the atomic-scale response of dielectrics/ferroelectrics to electric fields is central to their functionality. Here we introduce an in situ characterization method that reveals changes in the local atomic structure in polycrystalline materials under fields. The method employs atomic pair distribution functions (PDFs), determined from X-ray total scattering that depends on orientation relative to the applied field, to probe structural changes over length scales from sub-Ångstrom to several nanometres. The PDF is sensitive to local ionic displacements and their short-range order, a key uniqueness relative to other techniques. The method is applied to representative ferroelectrics, BaTiO 3 andmore » Na ½Bi ½TiO 3, and dielectric SrTiO 3. For Na ½Bi ½TiO 3, the results reveal an abrupt field-induced monoclinic to rhombohedral phase transition, accompanied by ordering of the local Bi displacements and reorientation of the nanoscale ferroelectric domains. For BaTiO 3 and SrTiO 3, the local/nanoscale structural changes observed in the PDFs are dominated by piezoelectric lattice strain and ionic polarizability, respectively.« less

Magnetic Interactions at the Nanoscale in Trilayer Titanates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Yanwei; Yang, Zhenzhong; Kareev, M.

2016-02-17

We report on the phase diagram of competing magnetic interactions at the nanoscale in engineered ultrathin trilayer heterostructures of LaTiO3/SrTiO3/YTiO3, in which the interfacial inversion symmetry is explicitly broken. Combined atomic layer resolved scanning transmission electron microscopy with electron energy loss spectroscopy and electrical transport have confirmed the formation of a spatially separated two-dimensional electron liquid and high density two-dimensional localized magnetic moments at the LaTiO3/SrTiO3 and SrTiO3/YTiO3 interfaces, respectively. Resonant soft x-ray linear dichroism spectroscopy has demonstrated the presence of orbital polarization of the conductive LaTiO3/SrTiO3 and localized SrTiO3/YTiO3 electrons. Our results provide a route with prospects for exploringmore » new magnetic interfaces, designing a tunable two-dimensional d-electron Kondo lattice, and potential spin Hall applications.« less

Physical and electrical properties of SrTiO3 and SrZrO3

NASA Astrophysics Data System (ADS)

Fashren Muhamad, Norhizatol; Aina Maulat Osman, Rozana; Sobri Idris, Mohd; Yasin, Mohd Najib Mohd

2017-11-01

Perovskite type oxide strontium titanate (SrTiO3) and strontium zirconate (SrZrO3) ceramic powder has been synthesized using conventional solid state reaction method. The powders were mixed and ground undergone calcinations at 1400°C for 12 h and sintered at 1550°C for 5h. X-ray Diffraction exposes physical properties SrTiO3 which exhibit cubic phase (space group: pm-3m) at room temperature meanwhile SrZrO3 has Orthorhombic phase (space group: pnma). The electrical properties such as dielectric constant (ɛr), dielectric loss (tan δ), and conductivity (σ) were studied in variation temperature and frequency. High dielectric constant of SrTiO3 and SrZrO3 were observed at 10 kHz for both samples about 240 and 21 respectively at room temperature. The dielectric loss of SrTiO3 and SrZrO3 is very low loss value approximately 0.00076 and 0.67512 indicates very good dielectric.

Morphology modulation of SrTiO3/TiO2 heterostructures for enhanced photoelectrochemical performance.

PubMed

Jiao, Zhengbo; Chen, Tao; Yu, Hongchao; Wang, Teng; Lu, Gongxuan; Bi, Yingpu

2014-04-01

Design and fabrication of nanoscale semiconductors with regulatable morphology or structure has attracted tremendous interest due to the dependency relationship between properties and architectures. Two types of SrTiO3/TiO2 nanocomposites with different morphologies and structures have been fabricated by controlling the kinetics of hydrothermal reactions. One is TiO2 nanotube arrays densely wrapped by SrTiO3 film and the other is SrTiO3 nanospheres distributed on the top region of TiO2 nanotube arrays, which has been firstly fabricated. It has been found that the photoelectrochemical performances of these heterostructures are crucially dominated by their architectures. Heterostructured SrTiO3/TiO2 nanotube arrays were fabricated by traditional method in the absence of NaOH and they exhibited higher photoelectrochemical performance than pure TiO2 nanotube arrays. However, the compact SrTiO3 coating film on the sidewalls of TiO2 nanotube arrays could inevitably destroy the tubular structures of TiO2 and thus go against the vectorial transport of electrons. Interestingly, when excess NaOH was added into the growth solution, SrTiO3 nanospheres would be rationally grafted on the top of TiO2 nanotube arrays, which could preserve the tubular structures of TiO2, and thus further improve the photoelectrochemical performance. Copyright © 2013 Elsevier Inc. All rights reserved.

Stabilizing new bismuth compounds in thin film form [Stabilizing new thin film materials in bismuth compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Aiping; Zhou, Honghui; Zhu, Yuanyuan

2016-11-10

Growth of unexpected phases from a composite target of BiFeO 3:BiMnO 3 and/or BiFeO 3:BiCrO 3 has been explored using pulsed laser deposition. The Bi 2FeMnO 6 tetragonal phase can be grown directly on SrTiO 3 (STO) substrate, while two phases (S1 and S2) were found to grow on LaAlO 3 (LAO) substrates with narrow growth windows. However, introducing a thin CeO 2 buffer layer effectively broadens the growth window for the pure S1 phase, regardless of the substrate. Moreover, we discovered two new phases (X1 and X2) when growing on STO substrates using a BiFeO 3:BiCrO 3 target. Puremore » X2 phase can be obtained on CeO 2-buffered STO and LAO substrates. This work demonstrates that some unexpected phases can be stabilized in a thin film form by using composite perovskite BiRO 3 (R = Cr, Mn, Fe, Co, Ni) targets. Moreover, it also indicates that CeO 2 can serve as a general template for the growth of bismuth compounds with potential room-temperature multiferroicity.« less

High Temperature Superconducting Compounds

DTIC Science & Technology

1992-11-30

broadened interest in superconductivity in both the engineering and scientific communities. Superconducting materials may be offered as a solution to a...YBa2Cu307- has been made. For yttrium, the tris( isopropoxide ) was used exclusively, while the use of both Ba(O-i-Pr)2 and Ba(OCH2Ch2OEt)2 (prepared in... solutions of Cu(acac)2, Ba(OCH2CH 2OEt)2 , and Y(O-i-Pr)3 were spin coated on SrTiO 3 (100) and fired under oxygen to give oriented (b axis normal to the

Physics of SrTiO₃-based heterostructures and nanostructures: a review.

PubMed

Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

2017-08-30

1 Overview 1 1.1 Introduction 1 1.1.1 Oxide growth techniques are rooted in search for high-Tc superconductors 2 1.1.2 First reports of interface conductivity 2 1.2 2D physics 2 1.3 Emergent properties of oxide heterostructures and nanostructures 3 1.4 Outline 3 2 Relevant properties of SrTiO3 3 2.1 Structural properties and transitions 3 2.2 Ferroelectricity, Paraelectricity and Quantum Paraelectricity 4 2.3 Electronic structure 5 2.4 Defects 6 2.4.1 Oxygen vacancies 6 2.4.2 Terraces 7 2.5 Superconductivity 7 3 SrTiO3-based heterostructures and nanostructures 8 3.1 Varieties of heterostructures 8 3.1.1 SrTiO3 only 9 3.1.2 LaAlO3/SrTiO3 9 3.1.3 Other heterostructures formed with SrTiO3 10 3.2 Thin-film growth 10 3.2.1 Substrates 10 3.2.2 SrTiO3 surface treatment 11 3.2.3 Pulsed Laser Deposition 11 3.2.4 Atomic Layer Deposition 13 3.2.5 Molecular Beam Epitaxy 14 3.2.6 Sputtering 15 3.3 Device Fabrication 15 3.3.1 "Conventional" photolithography - Thickness Modulation, hard masks, etc. 15 3.3.2 Ion beam irradiation 16 3.3.3 Conductive-AFM lithography 16 4 Properties and phase diagram of LaAlO3/SrTiO3 16 4.1 Insulating state 16 4.2 Conducting state 17 4.2.1 Confinement thickness (the depth profile of the 2DEG) 17 4.3 Metal-insulator transition and critical thickness 18 4.3.1 Polar catastrophe ( electronic reconstruction) 18 4.3.2 Oxygen Vacancies 19 4.3.3 Interdiffusion 20 4.3.4 Polar Interdiffusion + oxygen vacancies + antisite pairs 20 4.3.5 Role of surface adsorbates 21 4.3.6 Hidden FE like distortion - Strain induced instability 21 4.4 Structural properties and transitions 21 4.5 Electronic band structure 22 4.5.1 Theory 22 4.5.2 Experiment 23 4.5.3 Lifshitz transition 24 4.6 Defects, doping, and compensation 25 4.7 Magnetism 25 4.7.1 Experimental evidence 25 4.7.2 Two types of magnetism 27 4.7.3 Ferromagnetism 27 4.7.4 Metamagnetism 28 4.8 Superconductivity 28 4.9 Optical properties 29 4.9.1 Photoluminesce experiments 29 4.9.2 Second Harmonic Generation 29 4.10 Coexistence of superconductivity and magnetism 30 4.11 Magnetic and conducting phases 30 5 Quantum transport in LaAlO3/SrTiO3 heterostructures and microstructures 31 5.1 2D transport 31 5.2 Inhomogeneous Transport 31 5.3 Anisotropic Magnetoresistance 32 5.4 Spin-orbit coupling 32 5.5 Anomalous Hall Effect 34 5.6 Shubnikov-de Haas (SdH) Oscillation 35 5.7 Quantum Hall Effect 37 5.8 Spintronic Effects 38 6 Quantum transport in LaAlO3/SrTiO3 nanostructures 39 6.1 Quasi-1D Superconductivity 39 6.2 Universal conductance fluctuations 40 6.3 Dissipationless Electronic Waveguides 40 6.4 Superconducting Quantum Interference Devices (SQUID) 41 6.5 Electron pairing without superconductivity 41 6.6 Tunable Electron-Electron Interaction 42 7 Outlook 43 7.1 Outstanding physics questions 43 7.1.1 Polar catastrophe (not) 43 7.1.2 Coexistence of phases 43 7.1.3 Novel superconducting states (e.g., FFLO, other pairing symmetries) 43 7.1.4 Magnetism mechanism 43 7.1.5 Exotic phases (eg. Majorana physics) 43 7.1.6 Luttinger liquids 44 7.2 Future applications 44 7.2.1 Spintronics 44 7.2.2 Quantum simulation 44 7.2.3 Qubits/quantum computing 44 7.2.4 Sensing 44 8 Figures 45 9 Reference 6. © 2017 IOP Publishing Ltd.

Ferroelectricity of strained SrTiO3 in lithium tetraborate glass-nanocomposite and glass-ceramic

NASA Astrophysics Data System (ADS)

Abdel-Khalek, E. K.; Mohamed, E. A.; Kashif, I.

2018-02-01

Glass-nanocomposite (GNCs) sample of the composition [90Li2B4O7-10SrTiO3] (mol %) was prepared by conventional melt quenching technique. The glassy phase and the amorphous nature of the GNCs sample were identified by Differential thermal analysis (DTA) and X-ray diffraction (XRD) studies, respectively. DTA of the GNCs exhibits sharp and broad exothermic peaks which represent the crystallization of Li2B4O7 and SrTiO3, respectively. The tetragonal Li2B4O7 and tetragonal SrTiO3 crystalline phases in glass-ceramic (GC) were identified by XRD and scanning electron microscopic (SEM). The strain tetragonal SrTiO3 phase in GNCs and GC has been confirmed by SEM. The values of crystallization activation energies (Ec1 and Ec2) for the first and second exothermic peaks are equal to 174 and 1452 kJ/mol, respectively. The Ti3+ ions in tetragonal distorted octahedral sites in GNCs were identified by optical transmission spectrum. GNCs and GC samples exhibit broad dielectric anomalies at 303 and 319 K because of strained SrTiO3 ferroelectric, respectively.

Electronic and optical properties of Cr-, B-doped, and (Cr, B)-codoped SrTiO3

NASA Astrophysics Data System (ADS)

Wu, Jiao; Huang, Wei-Qing; Yang, Ke; Wei, Zeng-Xi; Peng, P.; Huang, Gui-Fang

2017-04-01

Energy band engineering of semiconductors plays a crucial role in exploring high-efficiency visible-light response photocatalysts. Herein, we systematically study the electronic properties and optical response of Cr-, B-doped SrTiO3, and (Cr, B)-codoped SrTiO3 by using first-principles calculations to explore the mechanism for its superior photocatalytic activities in the visible light region. Special emphasis is placed on uncovering the synergy effects of nonmetal B dopant with metal Cr dopant at different cation sites. It is found that the electronic properties and optical absorption of SrTiO3 can be dramatically engineered by mono- or co-doping. In particular, the intermediate levels lying in the bandgap of the codoped SrTiO3 relay on the Cr impurity doped at Sr or Ti cation sites. Moreover, the (Cr@Sr, B@O)-SrTiO3 retains the charge balancing without the generation of unexpected oxygen vacancies, and is more desirable for solar light harvesting due to its higher absorption than others in the entire visible light. The findings can rationalize the available experimental results and are helpful in designing SrTiO3-based photocatalysts with high-efficiency performance.

Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates

PubMed Central

Zhao, Lina; Lu, Zengxing; Zhang, Fengyuan; Tian, Guo; Song, Xiao; Li, Zhongwen; Huang, Kangrong; Zhang, Zhang; Qin, Minghui; SujuanWu; Lu, Xubing; Zeng, Min; Gao, Xingsen; Dai, Jiyan; Liu, Jun-Ming

2015-01-01

Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ~60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch2) nonvolatile memories and other oxide nanoelectronic devices. PMID:25853937

Electron Mobility in γ -Al2O3/SrTiO3

NASA Astrophysics Data System (ADS)

Christensen, D. V.; Frenkel, Y.; Schütz, P.; Trier, F.; Wissberg, S.; Claessen, R.; Kalisky, B.; Smith, A.; Chen, Y. Z.; Pryds, N.

2018-05-01

One of the key issues in engineering oxide interfaces for electronic devices is achieving high electron mobility. SrTiO3 -based interfaces with high electron mobility have gained a lot of interest due to the possibility of combining quantum phenomena with the many functionalities exhibited by SrTiO3 . To date, the highest electron mobility (140 000 cm2/V s at 2 K) is obtained by interfacing perovskite SrTiO3 with spinel γ -Al2O3 . The origin of the high mobility, however, remains poorly understood. Here, we investigate the scattering mechanisms limiting the mobility in γ -Al2O3/SrTiO3 at temperatures between 2 and 300 K and over a wide range of sheet carrier densities. For T >150 K , we find that the mobility is limited by longitudinal optical phonon scattering. For large sheet carrier densities (>8 ×1013 cm-2 ), the screened electron-phonon coupling leads to room-temperature mobilities up to μ ˜12 cm2/V s . For 5 K

Ferromagnetic CaRuO3

PubMed Central

Tripathi, Shivendra; Rana, Rakesh; Kumar, Sanjay; Pandey, Parul; Singh, R. S.; Rana, D. S.

2014-01-01

The non-magnetic and non-Fermi-liquid CaRuO3 is the iso-structural analog of the ferromagnetic (FM) and Fermi-liquid SrRuO3. We show that an FM order in the orthorhombic CaRuO3 can be established by the means of tensile epitaxial strain. The structural and magnetic property correlations in the CaRuO3 films formed on SrTiO3 (100) substrate establish a scaling relation between the FM moment and the tensile strain. The strain dependent crossover from non-magnetic to FM CaRuO3 was observed to be associated with switching of non-Fermi liquid to Fermi-liquid behavior. The intrinsic nature of this strain-induced FM order manifests in the Hall resistivity too; the anomalous Hall component realizes in FM tensile-strained CaRuO3 films on SrTiO3 (100) whereas the non-magnetic compressive-strained films on LaAlO3 (100) exhibit only the ordinary Hall effect. These observations of an elusive FM order are consistent with the theoretical predictions of scaling of the tensile epitaxial strain and the magnetic order in tensile CaRuO3. We further establish that the tensile strain is more efficient than the chemical route to induce FM order in CaRuO3. PMID:24464302

Nanoscale Investigation of New Fe-Based Superconductors

DTIC Science & Technology

2012-10-15

temperature over 55K in one unit cell FeSe film on SrTiO3 substrate [4]. In addition, a clear diamagnetic signal around 40K was observed in as-grown FeSe nano ...scale. Comparing with other two kinds of nano -scale samples, ultrathin film and Report Documentation Page Form ApprovedOMB No. 0704-0188 Public...unclassified c. THIS PAGE unclassified Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std Z39-18 nano -particles, crystalline nanowire (NW) in

Mechanisms of charge transfer and redistribution in LaAlO3/SrTiO3 revealed by high-energy optical conductivity.

PubMed

Asmara, T C; Annadi, A; Santoso, I; Gogoi, P K; Kotlov, A; Omer, H M; Motapothula, M; Breese, M B H; Rübhausen, M; Venkatesan, T; Ariando; Rusydi, A

2014-04-14

In condensed matter physics the quasi two-dimensional electron gas at the interface of two different insulators, polar LaAlO3 on nonpolar SrTiO3 (LaAlO3/SrTiO3) is a spectacular and surprising observation. This phenomenon is LaAlO3 film thickness dependent and may be explained by the polarization catastrophe model, in which a charge transfer of 0.5e(-) from the LaAlO3 film into the LaAlO3/SrTiO3 interface is expected. Here we show that in conducting samples (≥ 4 unit cells of LaAlO3) there is indeed a ~0.5e(-) transfer from LaAlO3 into the LaAlO3/SrTiO3 interface by studying the optical conductivity in a broad energy range (0.5-35 eV). Surprisingly, in insulating samples (≤ 3 unit cells of LaAlO3) a redistribution of charges within the polar LaAlO3 sublayers (from AlO2 to LaO) as large as ~0.5e(-) is observed, with no charge transfer into the interface. Hence, our results reveal the different mechanisms for the polarization catastrophe compensation in insulating and conducting LaAlO3/SrTiO3 interfaces.

Electric-Field Induced Reversible Switching of the Magnetic Easy Axis in Co/BiFeO3 on SrTiO3.

PubMed

Gao, Tieren; Zhang, Xiaohang; Ratcliff, William; Maruyama, Shingo; Murakami, Makoto; Varatharajan, Anbusathaiah; Yamani, Zahra; Chen, Peijie; Wang, Ke; Zhang, Huairuo; Shull, Robert; Bendersky, Leonid A; Unguris, John; Ramesh, Ramamoorthy; Takeuchi, Ichiro

2017-05-10

Electric-field (E-field) control of magnetism enabled by multiferroic materials has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme has only been demonstrated at room temperature using BiFeO 3 films grown on DyScO 3 , a unique and expensive substrate, which gives rise to a particular ferroelectric domain pattern in BiFeO 3 . Here, we demonstrate reversible electric-field-induced switching of the magnetic state of the Co layer in Co/BiFeO 3 (BFO) (001) thin film heterostructures fabricated on (001) SrTiO 3 (STO) substrates. The angular dependence of the coercivity and the remanent magnetization of the Co layer indicates that its easy axis reversibly switches back and forth 45° between the (100) and the (110) crystallographic directions of STO as a result of alternating application of positive and negative voltage pulses between the patterned top Co electrode layer and the (001) SrRuO 3 (SRO) layer on which the ferroelectric BFO is epitaxially grown. The coercivity (H C ) of the Co layer exhibits a hysteretic behavior between two states as a function of voltage. A mechanism based on the intrinsic magnetoelectric coupling in multiferroic BFO involving projection of antiferromagnetic G-type domains is used to explain the observation. We have also measured the exact canting angle of the G-type domain in strained BFO films for the first time using neutron diffraction. These results suggest a pathway to integrating BFO-based devices on Si wafers for implementing low power consumption and nonvolatile magnetoelectronic devices.

Spatially Resolved Nano-Scale Characterization of Electronic States in SrTiO3(001) Surfaces by STM/STS

NASA Astrophysics Data System (ADS)

Iwaya, Katsuya; Ohsawa, Takeo; Shimizu, Ryota; Hashizume, Tomihiro; Hitosugi, Taro

2012-02-01

We have performed low temperature scanning tunneling microscopy/spectroscopy (STM/STS) measurements on TiO2-terminated SrTiO3(001) thin film surfaces. The conductance map exhibited electronic modulations that were completely different from the surface structure. We also found that the electronic modulations were strongly dependent on temperature and the density of atomic defects associated with oxygen vacancies. These results suggest the existence of strongly correlated two-dimensional electronic states near the SrTiO3 surface, implying the importance of electron correlation at the interfaces of SrTiO3-related heterostructures.

Nanoscale self-templating for oxide epitaxy with large symmetry mismatch

DOE PAGES

Gao, Xiang; Lee, Shinbuhm; Nichols, John A.; ...

2016-12-02

Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO 2(B) thin film on a perovskite SrTiO 3 (STO) substrate. For this study, we observe an ultrathin (2–3 unit cells) interlayer best described as highly strained VO 2(B) nanodomains combined with an extra (Ti,V)O 2 layer on the TiO 2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO 2(B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despitemore » their large symmetry and lattice mismatch.« less

Dielectric collapse at the LaAlO 3/SrTiO 3 (001) heterointerface under applied electric field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minohara, M.; Hikita, Y.; Bell, C.

The fascinating interfacial transport properties at the LaAlO 3/SrTiO 3 heterointerface have led to intense investigations of this oxide system. Exploiting the large dielectric constant of SrTiO 3 at low temperatures, tunability in the interfacial conductivity over a wide range has been demonstrated using a back-gate device geometry. In order to understand the effect of back-gating, it is crucial to assess the interface band structure and its evolution with external bias. In this study, we report measurements of the gate-bias dependent interface band alignment, especially the confining potential profile, at the conducting LaAlO 3/SrTiO 3 (001) heterointerface using soft andmore » hard x-ray photoemission spectroscopy in conjunction with detailed model simulations. Depth-profiling analysis incorporating the electric field dependent dielectric constant in SrTiO 3 reveals that a significant potential drop on the SrTiO 3 side of the interface occurs within ~2 nm of the interface under negative gate-bias. These results demonstrate gate control of the collapse of the dielectric permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.« less

Dielectric collapse at the LaAlO 3/SrTiO 3 (001) heterointerface under applied electric field

DOE PAGES

Minohara, M.; Hikita, Y.; Bell, C.; ...

2017-08-25

The fascinating interfacial transport properties at the LaAlO 3/SrTiO 3 heterointerface have led to intense investigations of this oxide system. Exploiting the large dielectric constant of SrTiO 3 at low temperatures, tunability in the interfacial conductivity over a wide range has been demonstrated using a back-gate device geometry. In order to understand the effect of back-gating, it is crucial to assess the interface band structure and its evolution with external bias. In this study, we report measurements of the gate-bias dependent interface band alignment, especially the confining potential profile, at the conducting LaAlO 3/SrTiO 3 (001) heterointerface using soft andmore » hard x-ray photoemission spectroscopy in conjunction with detailed model simulations. Depth-profiling analysis incorporating the electric field dependent dielectric constant in SrTiO 3 reveals that a significant potential drop on the SrTiO 3 side of the interface occurs within ~2 nm of the interface under negative gate-bias. These results demonstrate gate control of the collapse of the dielectric permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.« less

Impact of oxygen diffusion on superconductivity in YBa2Cu3O7 -δ thin films studied by positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Reiner, M.; Gigl, T.; Jany, R.; Hammerl, G.; Hugenschmidt, C.

2018-04-01

The oxygen deficiency δ in YBa2Cu3O7 -δ (YBCO) plays a crucial role for affecting high-temperature superconductivity. We apply (coincident) Doppler broadening spectroscopy of the electron-positron annihilation line to study in situ the temperature dependence of the oxygen concentration and its depth profile in single crystalline YBCO film grown on SrTiO3 (STO) substrates. The oxygen diffusion during tempering is found to lead to a distinct depth dependence of δ , which is not accessible using x-ray diffraction. A steady state reached within a few minutes is defined by both, the oxygen exchange at the surface and at the interface to the STO substrate. Moreover, we reveal the depth-dependent critical temperature Tc in the as prepared and tempered YBCO film.

Time Resolved X-ray Surface Diffraction Study of Surface Transport During Pulsed Laser Deposition of SrTiO_3

NASA Astrophysics Data System (ADS)

Tischler, J. Z.; Larson, B. C.; Eres, Gyula; Rouleau, D. H.; Lowndes, D. H.; Zschack, P.

2003-03-01

Time-resolved, phin-situ, surface x-ray diffraction measurements at the UNICAT beamline at the Advanced Photon Source were used to study the early stages of growth during pulsed laser deposition of SrTiO_3. Crystal truncation rod (CTR) intensity oscillations observed at anti-Bragg positions indicated layer by layer growth in the broad temperature range of 350^oC to 850^oC. The structure of the CTR intensities between laser pulses shows two time scales, a prompt (< 1 msec) response when the laser ablation plume arrives at the substrate followed by a slower ( ˜1-10 sec) intensity response. The fast time scale is attributed to a prompt ˜μ s transfer of newly arrived species to a lower level, and the slower to material transfer delayed by the evolution of small islands. We present analyses of the CTR intensties in terms of the fraction of the deposited material that promptly changes level and the kinetics of the delayed transfer as a function of surface coverage.

Transition from reconstruction toward thin film on the (110) surface of strontium titanate

DOE PAGES

Wang, Z.; Loon, A.; Subramanian, A.; ...

2016-03-08

The surfaces of metal oxides often are reconstructed with a geometry and composition that is considerably different from a simple termination of the bulk. Such structures can also be viewed as ultrathin films, epitaxed on a substrate. Here, the reconstructions of the SrTiO 3 (110) surface are studied combining scanning tunneling microscopy (STM), transmission electron diffraction, and X-ray absorption spectroscopy (XAS), and analyzed with density functional theory calculations. Whereas SrTiO 3 (110) invariably terminates with an overlayer of titania, with increasing density its structure switches from n × 1 to 2 × n. At the same time the coordination ofmore » the Ti atoms changes from a network of corner-sharing tetrahedra to a double layer of edge-shared octahedra with bridging units of octahedrally coordinated strontium. Furthermore, this transition from the n × 1 to 2 × n reconstructions is a transition from a pseudomorphically stabilized tetrahedral network toward an octahedral titania thin film with stress-relief from octahedral strontia units at the surface.« less

Growth control of oxygen stoichiometry in homoepitaxial SrTiO3 films by pulsed laser epitaxy in high vacuum

PubMed Central

Lee, Ho Nyung; Ambrose Seo, Sung S.; Choi, Woo Seok; Rouleau, Christopher M.

2016-01-01

In many transition metal oxides, oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a challenge. In this work, we show that, through proper control of the plume kinetic energy, stoichiometric crystalline films can be synthesized without generating oxygen defects even in high vacuum. We use a model homoepitaxial system of SrTiO3 (STO) thin films on single crystal STO substrates. Physical property measurements indicate that oxygen vacancy generation in high vacuum is strongly influenced by the energetics of the laser plume, and it can be controlled by proper laser beam delivery. Therefore, our finding not only provides essential insight into oxygen stoichiometry control in high vacuum for understanding the fundamental properties of STO-based thin films and heterostructures, but expands the utility of pulsed laser epitaxy of other materials as well. PMID:26823119

Interface Structure, Band Alignment, and Built-In Potentials at LaFeO 3 / n - SrTiO 3 Heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Comes, Ryan; Chambers, Scott

We demonstrate that LaFeO 3/n-SrTiO 3(001) heterojunctions engineered to have opposite interface polarities exhibit very similar band offsets and built-in potentials within the LaFeO 3 layer of the same sign. However, heterojunctions with the TiO20-LaO+ interface structure attract electronic charge from the n-STO substrate, whereas those with the SrO0-FeO2-1 interface structure do not. These results suggest that the latter would more effectively facilitate photogenerated electron-hole pair separation than the former, an important result for photoelectrochemical water splitting

First-Principles Prediction of Two-Dimensional Electron Gas Driven by Polarization Discontinuity in Nonpolar/Nonpolar AHfO3/SrTiO3 (A=Ca, Sr, and Ba) Heterostructures

NASA Astrophysics Data System (ADS)

Cheng, Jianli; Nazir, Safdar; Yang, Kesong

By using first-principles electronic structure calculations, we explored the possibility of producing two-dimensional electron gas (2DEG) in nonpolar/nonpolar AHfO3/SrTiO3 (A = Ca, Sr, and Ba) heterostructures (HS). Two types of interfaces, AO/TiO2 and HfO2/SrO, each with AO and HfO2 surface terminations, are modeled, respectively. The polarization domain and resulting interfacial electronic property are found to be more sensitive to the surface termination of the film rather than the interface model. As film thickness increases, an insulator-to-metal transition (IMT) is found in all the HS with HfO2 surface termination: for AO/TiO2 interfaces, predicted critical film thickness for an IMT is about 7, 6, and 3 unit cells for CaHfO3/SrTiO3, SrHfO3/SrTiO3, and BaHfO3/SrTiO3, respectively; for HfO2/SrO interfaces, the critical film thickness is about 7.5, 5.5, and 4.5 unit cells, respectively. In contrast, for the HS with AO surface termination, only CaHfO3/SrTiO3 exhibits an IMT with a much larger critical film thickness about 11 - 12 unit cells. This work is expected to stimulate further experimental investigation to the interfacial conductivity in the nonpolar/nonpolar AHfO3/SrTiO3 HS. National Science Foundation and Department of Defense National Security Science and Engineering Faculty Fellowship.

Hybrid Molecular Beam Epitaxy for High Quality Strontium Titanate

NASA Astrophysics Data System (ADS)

Jalan, Bharat

2011-12-01

Advancement in thin film growth techniques drives new physics and technologies. Thin film growth approaches and characterization techniques have become more crucial than ever to design and evaluate many emerging materials systems, such as complex oxides. Complex oxides with the perovskite and related structures are fundamentally different from conventional semiconductors and exhibit much richer phenomena as diverse as ferroelectricity, superconductivity, and strongly-correlated Mott-Hubbard-type insulator characteristics. The structural quality of oxide films grown by molecular beam epitaxy (MBE) now matches that of epitaxial semiconductors. Stoichiometry control, however, remains a major challenge. The presence of large (˜tens of ppm) amounts of point defects and impurities, which are commonly present in thin films, has often made the realization and interpretation of intrinsic phenomena difficult. In this dissertation we first describe our work in the development of a hybrid MBE approach for the growth of high quality insulating SrTiO 3 films. The approach uses a combination of solid and metal-organic sources to supply the metals. Films grow in layer-by-layer and step-flow growth modes, with atomically smooth surfaces and an excellent structural quality that is only limited by those of the substrates. A major as- pect of this MBE technique is that it provides a route to stoichiometric SrTiO3. This is achieved by growing films within a "MBE growth window", in which the stoichiome- try is self-regulating, independent of the precise metal flux ratios. Despite the use of a chemical precursor that supply Ti, the carbon incorporation in the films remains below or in the low ppm range. This was achieved by growing films at relatively high temper- atures. We will discuss the transport properties of MBE grown SrTiO3 film. We show that excellent stoichiometry control and low intrinsic defect concentrations, afforded by MBE, allow for the high electron mobility in n-doped SrTiO 3 films, exceeding that of bulk single crystals. In addition, we demonstrate that modification of the band-structure and removal of domains etc. using uniaxial compressive stress can lead to an additional enhancement of low-temperature electron mobility by 300%, up to 128,000 cm2/Vs, with no obvious mobility saturation. Finally, we discuss the nature of the two-dimensional electron gas in delta-doped SrTiO3 films by analyzing Shubnikov-de Haas oscillations. Despite the inherent com- plexity of a sub-band that is derived from four d-band states near the conduction band minimum, we show that the quantum oscillations can be modeled quantitatively. We present the room temperature thermoelectric properties of uniformly doped and delta-doped SrTiO3 films, with the goal to explore these high quality films not only as a potential thermoelectric but also to understand electronic structure using electrical and thermal transport.

Ferroelectric Sm-Doped BiMnO3 Thin Films with Ferromagnetic Transition Temperature Enhanced to 140 K

PubMed Central

2014-01-01

A combined chemical pressure and substrate biaxial pressure crystal engineering approach was demonstrated for producing highly epitaxial Sm-doped BiMnO3 (BSMO) films on SrTiO3 single crystal substrates, with enhanced magnetic transition temperatures, TC up to as high as 140 K, 40 K higher than that for standard BiMnO3 (BMO) films. Strong room temperature ferroelectricity with piezoresponse amplitude, d33 = 10 pm/V, and long-term retention of polarization were also observed. Furthermore, the BSMO films were much easier to grow than pure BMO films, with excellent phase purity over a wide growth window. The work represents a very effective way to independently control strain in-plane and out-of-plane, which is important not just for BMO but for controlling the properties of many other strongly correlated oxides. PMID:25141031

Optical study of the free-carrier response of LaTiO3/SrTiO3 superlattices.

PubMed

Seo, S S A; Choi, W S; Lee, H N; Yu, L; Kim, K W; Bernhard, C; Noh, T W

2007-12-31

We used infrared spectroscopic ellipsometry to investigate the electronic properties of LaTiO_{3}/SrTiO_{3} superlattices (SLs). Our results indicated that, independent of the SL periodicity and individual layer thickness, the SLs exhibited a Drude metallic response with sheet carrier density per interface approximately 3x10;{14} cm;{-2}. This is probably due to the leakage of d electrons at interfaces from the Mott insulator LaTiO3 to the band insulator SrTiO3. We observed a carrier relaxation time approximately 35 fs and mobility approximately 35 cm;{2} V-1 s;{-1} at 10 K, and an unusual temperature dependence of carrier density that was attributed to the dielectric screening of quantum paraelectric SrTiO3.

Pinhole mediated electrical transport across LaTiO3/SrTiO3 and LaAlO3/SrTiO3 oxide hetero-structures

NASA Astrophysics Data System (ADS)

Kumar, Pramod; Dogra, Anjana; Toutam, Vijaykumar

2013-11-01

Metal-insulator-metal configuration of LaTiO3/SrTiO3 and LaAlO3/SrTiO3 hetero-structures between two dimensional electron gas formed at the interface and different area top electrodes is employed for Conductive Atomic force microscopy (CAFM) imaging, Current-Voltage (I-V), and Capacitance-Voltage (C-V) spectroscopy. Electrode area dependent I-V characteristics are observed for these oxide hetero-structures. With small area electrodes, rectifying I-V characteristics are observed, compared to, both tunneling and leakage current characteristics for large area electrodes. CAFM mapping confirmed the presence of pinholes on both surfaces. Resultant I-V characteristics have a contribution from both tunneling and leakage due to pinholes.

Controlling the preferential orientation in sol-gel prepared CaCu3Ti4O12 thin films by LaAlO3 and NdGaO3 substrates

NASA Astrophysics Data System (ADS)

Pongpaiboonkul, Suriyong; Kasa, Yumairah; Phokharatkul, Ditsayut; Putasaeng, Bundit; Hodak, Jose H.; Wisitsoraat, Anurat; Hodak, Satreerat K.

2016-11-01

Researchers have paid considerable attention to CaCu3Ti4O12 (CCTO) due to the colossal dielectric constant over a wide range of frequency and temperature. Despite of the growing number of works dealing with CCTO, there have been few studies of the role played by the substrate in inducing structural and dielectric effects of this material. In this work, highly-oriented CCTO thin films have been deposited on LaAlO3(100), NdGaO3(100) and NdGaO3(110) substrates using a sol-gel method. These single crystal substrates were chosen in terms of small lattice mismatch between CCTO and the substrate. The X-ray diffraction patterns showed that the CCTO film layers grow with different orientations depending upon the substrate used. We show that the preferred orientation of CCTO thin films can be manipulated to a high degree by growing it on specific crystal planes of the substrates without the use of buffer layers. Colossal dielectric constants are observed in our films which appear to correlate with the film crystallinity and preferred orientation.

Millimeter-wave surface resistance of laser-ablated YBa2Cu3O(7-delta) superconducting films

NASA Technical Reports Server (NTRS)

Miranda, F. A.; Gordon, W. L.; Bhasin, K. B.; Warner, J. D.

1990-01-01

The millimeter-wave surface resistance of YBa2Cu3O(7-delta) superconducting films was measured in a gold-plated copper host cavity at 58.6 GHz between 25 and 300 K. High-quality laser-ablated films of 1.2-micron thickness were deposited on SrTiO3 and LaGaO3 substrates. Their transition temperatures were 90.0 and 88.9 K, with a surface resistance at 70 K of 82 and 116 milliohms, respectively. These values are better than the values for the gold-plated cavity at the same temperature and frequency.

Effect of double layer thickness on magnetoelectric coupling in multiferroic BaTiO3-Bi0.95Gd0.05FeO3 multilayers

NASA Astrophysics Data System (ADS)

Hohenberger, S.; Lazenka, V.; Temst, K.; Selle, S.; Patzig, C.; Höche, T.; Grundmann, M.; Lorenz, M.

2018-05-01

The effect of double-layer thickness and partial substitution of Bi3+ by Gd3+ is demonstrated for multiferroic BaTiO3–BiFeO3 2–2 heterostructures. Multilayers of 15 double layers of BaTiO3 and Bi0.95Gd0.05FeO3 were deposited onto (0 0 1) oriented SrTiO3 substrates by pulsed laser deposition with various double layer thicknesses. X-ray diffraction and high resolution transmission electron microscopy investigations revealed a systematic strain tuning with layer thickness via coherently strained interfaces. The multilayers show increasingly enhanced magnetoelectric coupling with reduced double layer thickness. The maximum magnetoelectric coupling coefficient was measured to be as high as 50.8 V cm‑1 Oe‑1 in 0 T DC bias magnetic field at room temperature, and 54.9 V cm‑1 Oe‑1 above 3 T for the sample with the thinnest double layer thickness of 22.5 nm. This enhancement is accompanied by progressively increasing perpendicular magnetic anisotropy and compressive out-of-plane strain. To understand the origin of the enhanced magnetoelectric coupling in such multilayers, the temperature and magnetic field dependency of is discussed. The magnetoelectric performance of the Gd3+ substituted samples is found to be slightly enhanced when compared to unsubstituted BaTiO3–BiFeO3 multilayers of comparable double-layer thickness.

The structural behavior of SrTiO3 under 400 keV Ne2+ ion irradiation

NASA Astrophysics Data System (ADS)

Su, X.; Liu, C. G.; Yang, D. Y.; Wen, J.; Fu, E. G.; Zhang, J.; Chen, L. J.; Xu, D. P.; Wang, Y. Q.; Li, Y. H.

2015-11-01

The structural behavior of polycrystalline perovskite SrTiO3 under 400 keV Ne2+ ion irradiation at both liquid nitrogen (LN2) and room temperature (RT) has been investigated. The grazing incident X-ray diffraction technique was applied to examine the radiation-induced structural evolution. The radiation behavior of SrTiO3 depends strongly on the irradiation temperature. At LN2 temperature, the samples exhibit significant lattice swelling and amorphization, whereas at RT, the lattice swelling is much less conspicuous and no amorphization is detected even at the highest irradiation dose of 5.0 dpa. Nevertheless, Ne2+ irradiation induces peak splitting in XRD patterns at both temperatures. Furthermore, first-principle calculations have been performed with VASP, involving possible defect types, to identify which defect is responsible for the radiation effect of SrTiO3. The results reveal that the oxygen vacancy defect is the most likely to contribute to the radiation behavior of SrTiO3.

Thermoelectric properties of the yttrium-doped ceramic oxide SrTiO3

NASA Astrophysics Data System (ADS)

Khan, Tamal Tahsin; Ur, Soon-Chul

2017-01-01

The doping dependence of the thermoelectric figure of merit, ZT, of the ceramic oxide SrTiO3 at high temperature has been studied. In this study, yttrium was used as the doping element. A conventional solid-state reaction method was used for the preparation of Y-doped SrTiO3. The doping level in SrTiO3 was controlled to be in the doping range of 2 - 10 mole%. Almost all the yttrium atoms incorporated into the SrTiO3 provided charge carriers, as was observed by using X-ray diffraction pattern. The relative densities of all the samples varied from 98.53% to 99.45%. The thermoelectric properties, including the electrical conductivity σ, Seebeck coefficient S, thermal conductivity k, and the figure of merit, ZT, were investigated at medium temperatures. The ZT value showed an obvious doping level dependence, in which a value as high as 0.18 is realized at 773 K for a doping of 8 mole%.

Low-temperature route to metal titanate perovskite nanoparticles for photocatalytic applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alammar, Tarek; Hamm, Ines; Wark, Michael

MTiO 3 (M = Ca, Sr, Ba) nanoparticles were synthesized by a one-step room-temperature ultrasound synthesis in ionic liquid. The samples we gathered are characterized by X-ray diffraction, scanning electron microscopy, nitrogen adsorption, UV–vis diffuse reflectance, Raman and IR spectroscopy and their capability in photocatalytic hydrogen evolution and methylene blue degradation was tested. Powder X-ray diffraction and Raman spectroscopic investigations revealed the products to crystallize in the cubic perovskite structure. SEM observations showed that the obtained CaTiO 3 consists of nanospheres, BaTiO 3 of raspberry-like shaped particles of 20 nm in diameter. SrTiO 3 particles have cubic-like morphology with anmore » edge length varying from 100 to 300 nm. SrTiO 3 exhibited the highest catalytic activity for photocatalytic H 2 evolution using only 0.025 wt.% Rh as co-catalyst and for the degradation of methylene blue under UV irradiation. The influence of parameters such as synthesis method, calcination temperature, and doping with nitrogen on the morphology, crystallinity, chemical composition, and photocatalytic acivity of SrTiO 3 was studied. Heating the as-prepared SrTiO 3 to 700 °C for extended time leads to a decrease in surface area and catalytic activity. Ionothermal prepared SrTiO 3 exhibits a higher activity than sonochemically prepared one without co-catalyst due to a synergistic effect of anatase which is present in small amount as a by-phase. Furthermore, after photodeposition of Rh, however, the activity is lower than that of the sonochemically prepared SrTiO 3. Nitrogen-doped SrTiO 3 showed photocatalytic acivity under visible light irradiation.« less

Low-temperature route to metal titanate perovskite nanoparticles for photocatalytic applications

DOE PAGES

Alammar, Tarek; Hamm, Ines; Wark, Michael; ...

2014-11-13

MTiO 3 (M = Ca, Sr, Ba) nanoparticles were synthesized by a one-step room-temperature ultrasound synthesis in ionic liquid. The samples we gathered are characterized by X-ray diffraction, scanning electron microscopy, nitrogen adsorption, UV–vis diffuse reflectance, Raman and IR spectroscopy and their capability in photocatalytic hydrogen evolution and methylene blue degradation was tested. Powder X-ray diffraction and Raman spectroscopic investigations revealed the products to crystallize in the cubic perovskite structure. SEM observations showed that the obtained CaTiO 3 consists of nanospheres, BaTiO 3 of raspberry-like shaped particles of 20 nm in diameter. SrTiO 3 particles have cubic-like morphology with anmore » edge length varying from 100 to 300 nm. SrTiO 3 exhibited the highest catalytic activity for photocatalytic H 2 evolution using only 0.025 wt.% Rh as co-catalyst and for the degradation of methylene blue under UV irradiation. The influence of parameters such as synthesis method, calcination temperature, and doping with nitrogen on the morphology, crystallinity, chemical composition, and photocatalytic acivity of SrTiO 3 was studied. Heating the as-prepared SrTiO 3 to 700 °C for extended time leads to a decrease in surface area and catalytic activity. Ionothermal prepared SrTiO 3 exhibits a higher activity than sonochemically prepared one without co-catalyst due to a synergistic effect of anatase which is present in small amount as a by-phase. Furthermore, after photodeposition of Rh, however, the activity is lower than that of the sonochemically prepared SrTiO 3. Nitrogen-doped SrTiO 3 showed photocatalytic acivity under visible light irradiation.« less

Imaging Local Polarization in Ferroelectric Thin Films by Coherent X-Ray Bragg Projection Ptychography

NASA Astrophysics Data System (ADS)

Hruszkewycz, S. O.; Highland, M. J.; Holt, M. V.; Kim, Dongjin; Folkman, C. M.; Thompson, Carol; Tripathi, A.; Stephenson, G. B.; Hong, Seungbum; Fuoss, P. H.

2013-04-01

We used x-ray Bragg projection ptychography (BPP) to map spatial variations of ferroelectric polarization in thin film PbTiO3, which exhibited a striped nanoscale domain pattern on a high-miscut (001) SrTiO3 substrate. By converting the reconstructed BPP phase image to picometer-scale ionic displacements in the polar unit cell, a quantitative polarization map was made that was consistent with other characterization. The spatial resolution of 5.7 nm demonstrated here establishes BPP as an important tool for nanoscale ferroelectric domain imaging, especially in complex environments accessible with hard x rays.

Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films

NASA Astrophysics Data System (ADS)

Abutaha, A. I.; Sarath Kumar, S. R.; Alshareef, H. N.

2012-04-01

The effect of the laser fluence on high temperature thermoelectric properties of the La doped SrTiO3 (SLTO) thin films epitaxially grown on LaAlO3 <100> substrates by pulsed laser deposition is clarified. It is shown that oxygen vacancies that influence the effective mass of carriers in SLTO films can be tuned by varying the laser energy. The highest power factor of 0.433 W K-1 m-1 has been achieved at 636 K for a film deposited using the highest laser fluence of 7 J cm-2 pulse-1.

Effect of substrate on the atomic structure and physical properties of thermoelectric Ca3Co4O9 thin films

NASA Astrophysics Data System (ADS)

Qiao, Q.; Gulec, A.; Paulauskas, T.; Kolesnik, S.; Dabrowski, B.; Ozdemir, M.; Boyraz, C.; Mazumdar, D.; Gupta, A.; Klie, R. F.

2011-08-01

The incommensurately layered cobalt oxide Ca3Co4O9 exhibits an unusually high Seebeck coefficient as a polycrystalline bulk material, making it ideally suited for many high temperature thermoelectric applications. In this paper, we investigate properties of Ca3Co4O9 thin films grown on cubic perovskite SrTiO3, LaAlO3, and (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates and on hexagonal Al2O3 (sapphire) substrates using the pulsed laser deposition technique. X-ray diffraction and transmission electron microscopy analysis indicate strain-free growth of films, irrespective of the substrate. However, depending on the lattice and symmetry mismatch, defect-free growth of the hexagonal CoO2 layer is stabilized only after a critical thickness and, in general, we observe the formation of a stable Ca2CoO3 buffer layer near the substrate-film interface. Beyond this critical thickness, a large concentration of CoO2 stacking faults is observed, possibly due to weak interlayer interaction in this layered material. We propose that these stacking faults have a significant impact on the Seebeck coefficient and we report higher values in thinner Ca3Co4O9 films due to additional phonon scattering sites, necessary for improved thermoelectric properties.

Cation Ordering within the Perovskite Block of a Six-layer Ruddlesden-Popper Oxide from Layer-by-layer Growth

NASA Astrophysics Data System (ADS)

Yan, Lei; Niu, H. J.; Rosseinsky, M. J.

2011-03-01

The (AO)(A BO3)n Ruddlesden-Popper structure is an archetypal complex oxide consisting of two distinct structural units, an (AO) rock salt layer separating an n-octahedra thick perovskite block. Conventional high-temperature oxide synthesis methods cannot access members with n > 3 , butlowtemperaturelayer - by - layerthinfilmmethodsallowthepreparationofmaterialswiththickerperovskiteblocks , exploitinghighsurfacemobilityandlatticematchingwiththesubstrate . Thispresentationdescribesthegrowthofann = 6 memberCaO / (ABO 3)n (ABO 3 : CaMnO 3 , La 0.67 Ca 0.33 MnO 3 orCa 0.85 Sm 0.15 MnO 3) epitaxialsinglecrystalfilmsonthe (001) SrTiO 3 substrates by pulsed laser deposition with the assistance of a reflection high energy electron diffraction (RHEED).

Critical thickness for the two-dimensional electron gas in LaTiO3/SrTiO3 superlattices

NASA Astrophysics Data System (ADS)

You, Jeong Ho; Lee, Jun Hee

2013-10-01

Transport dimensionality of Ti d electrons in (LaTiO3)1/(SrTiO3)N superlattices has been investigated using density functional theory with local spin-density approximation + U method. Different spatial distribution patterns have been found between Ti t2g orbital electrons. The dxy orbital electrons are highly localized near interfaces due to the potentials by positively charged LaO layers, while the degenerate dyz and dxz orbital electrons are more distributed inside SrTiO3 insulators. For N ≥ 3 unit cells (u.c.), the Ti dxy densities of state exhibit the staircaselike increments, which appear at the same energy levels as the dxy flat bands along the Γ-Z direction in band structures. The kz-independent discrete energy levels indicate that the electrons in dxy flat bands are two-dimensional electron gases (2DEGs) which can transport along interfaces, but they cannot transport perpendicularly to interfaces due to the confinements in the potential wells by LaO layers. Unlike the dxy orbital electrons, the dyz and dxz orbital electrons have three-dimensional (3D) transport characteristics, regardless of SrTiO3 thicknesses. The 2DEG formation by dxy orbital electrons, when N ≥ 3 u.c., indicates the existence of critical SrTiO3 thickness where the electron transport dimensionality starts to change from 3D to 2D in (LaTiO3)1/(SrTiO3)N superlattices.

Evidence of martensitic phase transitions in magnetic Ni-Mn-In thin films

NASA Astrophysics Data System (ADS)

Sokolov, A.; Zhang, Le; Dubenko, I.; Samanta, T.; Stadler, S.; Ali, N.

2013-02-01

Ni50Mn35In15 Heusler alloy thin films (with thicknesses of about 10 nm) have been grown on single crystal MgO and SrTiO3 (STO) (100) substrates using a laser-assisted molecular beam epitaxy method. Films of mixed austenitic and martensitic phases and of pure martensitic phase have been detected for those grown on MgO and STO substrates, respectively. Thermomagnetic curves were measured using a SQUID magnetometer and are consistent with those of off-stoichiometric In-based bulk Heusler alloys, including a martensitic transition at T = 315 K for films grown on MgO. The differences in the properties of the films grown on MgO and STO are discussed.

Effect of substrate on the atomic structure and physical properties of thermoelectric Ca₃Co₄O₉ thin films.

PubMed

Qiao, Q; Gulec, A; Paulauskas, T; Kolesnik, S; Dabrowski, B; Ozdemir, M; Boyraz, C; Mazumdar, D; Gupta, A; Klie, R F

2011-08-03

The incommensurately layered cobalt oxide Ca(3)Co(4)O(9) exhibits an unusually high Seebeck coefficient as a polycrystalline bulk material, making it ideally suited for many high temperature thermoelectric applications. In this paper, we investigate properties of Ca(3)Co(4)O(9) thin films grown on cubic perovskite SrTiO(3), LaAlO(3), and (La(0.3)Sr(0.7))(Al(0.65)Ta(0.35))O(3) substrates and on hexagonal Al(2)O(3) (sapphire) substrates using the pulsed laser deposition technique. X-ray diffraction and transmission electron microscopy analysis indicate strain-free growth of films, irrespective of the substrate. However, depending on the lattice and symmetry mismatch, defect-free growth of the hexagonal CoO(2) layer is stabilized only after a critical thickness and, in general, we observe the formation of a stable Ca(2)CoO(3) buffer layer near the substrate-film interface. Beyond this critical thickness, a large concentration of CoO(2) stacking faults is observed, possibly due to weak interlayer interaction in this layered material. We propose that these stacking faults have a significant impact on the Seebeck coefficient and we report higher values in thinner Ca(3)Co(4)O(9) films due to additional phonon scattering sites, necessary for improved thermoelectric properties.

Formation and characterization of preferred oriented perovskite thin films on single-crystalline substrates

NASA Astrophysics Data System (ADS)

Chen, Lung-Chien; Chen, Cheng-Chiang; Hsiung Chang, Sheng; Lee, Kuan-Lin; Tseng, Zong-Liang; Chen, Sheng-Hui; Kuo, Hao-Chung

2018-06-01

Three single-crystalline (Al2O3, GaN/Al2O3 and InAs) substrates are used to assist the formation of crystallographically preferred oriented CH3NH3PbI3 (MAPbI3) thin films. The estimation of the lattice mismatch at the MAPbI3/substrate interface and water-droplet contact angle experiments indicate that the formation of a preferred oriented MAPbI3 thin film is induced by the single-crystalline substrate and is insensitive to the surface wettibility of the substrate. Moreover, the experimental results suggest that the lattice mismatch at the MAPbI3/single-crystalline semiconductor interface can strongly influence the photovoltaic performance of tandem solar cells.

Enhanced self-repairing capability of sol-gel derived SrTiO3/nano Al2O3 composite films

NASA Astrophysics Data System (ADS)

Yao, Manwen; Peng, Yong; Xiao, Ruihua; Li, Qiuxia; Yao, Xi

2016-08-01

SrTiO3/nano Al2O3 inorganic nanocomposites were prepared by using a conventional sol-gel spin coating process. For comparison, SrTiO3 films doped by equivalent amount of sol-Al2O3 have also been investigated. Aluminum deposited by using vacuum evaporation was used as the top electrode. The nanocomposites exhibited a significantly enhanced dielectric strength of 506.9 MV/m, which was increased by 97.4% as compared with the SrTiO3 films doped with sol-Al2O3. The leakage current maintained of the same order of microampere until the ultimate breakdown of the nanocomposites. The excellent electrical performances are ascribed to the anodic oxidation reaction in origin, which can repair the internal and/or surface defects of the films.

EPR investigation of the trivalent chromium complexes in SrTiO3

NASA Astrophysics Data System (ADS)

Azamat, D. V.; Dejneka, A.; Lančok, J.; Jastrabik, L.; Trepakov, V. A.; Bryknar, Z.; Neverova, E. V.; Badalyan, A. G.

2014-02-01

The trivalent chromium centers were investigated by means of electron paramagnetic resonance (EPR) in SrTiO3 single crystals grown using the Verneuil technique. It was shown that the charge compensation of the Cr3+-VO dominant centers in octahedral environment is due to the remote oxygen vacancy located on the axial axis of the center. In order to provide insight into spin-phonon relaxation processes the studies of axial distortion of Cr3+-VO centers have been performed as function of temperature. The analysis of the trigonal Cr3+ centers found in SrTiO3 indicates the presence of the nearest-neighbor strontium vacancy. The next-nearest-neighbor exchange-coupled pairs of Cr3+ in SrTiO3 has been analyzed from the angular variation of the total electron spin of S=2 resonance lines.

Physics of SrTiO3-based heterostructures and nanostructures: a review.

PubMed

Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

2018-02-09

This review provides a summary of the rich physics expressed within SrTiO 3 -based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO 3 itself, we will then discuss the basics of SrTiO 3 -based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

Studies on novel BiyXz-TiO2/SrTiO3 composites: Surface properties and visible light-driven photoactivity

NASA Astrophysics Data System (ADS)

Marchelek, Martyna; Grabowska, Ewelina; Klimczuk, Tomasz; Lisowski, Wojciech; Giamello, Elio; Zaleska-Medynska, Adriana

2018-03-01

A series of novel BiyXz-TiO2/SrTiO3 composites were prepared by multistep synthesis route. The as-prepared photocatalysts were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), diffuse reflectance spectroscopy (DRS), Fourier transform infrared (FT-IR), Raman spectra and BET analysis. The photocatalytic activity test was performed in aqueous solution of phenol under the irradiation of visible light range (λ ≥ 420 nm). Obtained results revealed that the BiOI_TiO2/SrTiO3 sample exhibit the highest photocatalytic activity under visible irradiation (0.6 μmol/dm3/min). Thus, it was demonstrated that modification of the TiO2/SrTiO3 microspheres by flowers-like structure made of bismuth oxyiodide resulted in enhancement of photocatalytic activity under visible light. The role of active species during the decomposition process of organic compound was investigated using different types of active species scavengers as well as electron paramagnetic resonance analysis (EPR). The study showed that in the BiOI_TiO2/SrTiO3/Vis system the holes (h+) plays relevant role in phenol decomposition. Furthermore, the stability and recyclable properties of obtained BiOI_TiO2/SrTiO3 sample were confirmed during three consecutive processes.

Change in the magnetic structure of (Bi,Sm)FeO3 thin films at the morphotropic phase boundary probed by neutron diffraction

NASA Astrophysics Data System (ADS)

Maruyama, Shingo; Anbusathaiah, Varatharajan; Fennell, Amy; Enderle, Mechthild; Takeuchi, Ichiro; Ratcliff, William D.

2014-11-01

We report on the evolution of the magnetic structure of BiFeO3 thin films grown on SrTiO3 substrates as a function of Sm doping. We determined the magnetic structure using neutron diffraction. We found that as Sm increases, the magnetic structure evolves from a cycloid to a G-type antiferromagnet at the morphotropic phase boundary, where there is a large piezoelectric response due to an electric-field induced structural transition. The occurrence of the magnetic structural transition at the morphotropic phase boundary offers another route towards room temperature multiferroic devices.

Spin-orbit interaction and Kondo scattering at the PrAlO3/SrTiO3 interface: effects of oxygen content

NASA Astrophysics Data System (ADS)

Mozaffari, Shirin; Guchhait, Samaresh; Markert, John T.

2017-10-01

We report the effects of oxygen pressure during growth (PO2 ) on the electronic and magnetic properties of PrAlO3 films grown on TiO2 -terminated SrTiO3 substrates. Resistivity measurements show an increase in the sheet resistance as PO2 is increased. The saturation of the sheet resistance down to 0.3 K is consistent with Kondo theory for PO2 ≥slant 10-5 torr. Resistivity data fits indicate Kondo temperatures of 16-18 K. For the 10-4 sample, we measured a moderate positive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction at low magnetic fields that evolves into a larger negative MR at high fields due to the Kondo effect. Analysis of the MR data permitted the extraction of the SO interaction critical field for the PO2=10-5 torr interface ( H_SO=1.25 T). We observed high positive MR for the least oxygenated sample, where a fraction of the n-type carriers are derived from oxygen vacancies and possible cation interdiffusion; for this 6×10-6 torr sample, Hall effect data indicate a thick conducting layer. Its extremely high MR (˜400% ) is attributed to classical behavior due to a distribution of mobilities.

A comparative study of photoconductivity in LaTiO3/SrTiO3 and LaAlO3/SrTiO3 2-DEG heterostructures

NASA Astrophysics Data System (ADS)

Rastogi, A.; Hossain, Z.; Budhani, R. C.

2013-02-01

Here we compare the growth temperature dependence of the response of LaTiO3/SrTiO3 and LaAlO3/SrTiO3 2D-electron gas (2-DEG) field effect structure to the optical radiation of near ultraviolet frequency and electrostatic gate field. For both the films the resistance of the channel increases significantly as growth temperature is lowered from 800 to 700 °C. These heterostructures show the photoconductivity (PC) simulated by UV light of λ ≤ 400 nm. The PC follows the stretched exponential dynamics. It is found that photo-response of the LaTiO3 films is prominent and has larger decay time constant as compare to LaAlO3 films. The effect of electric field on the photo-induced conducting state is also studied.

Thickness dependent thermoelectric properties of SrTiO3/SrLaTiO3 and SrZrO3/SrLaTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Ishii, Masatoshi; Baniecki, John; Schafranek, Robert; Kerman, Kian; Kurihara, Kazuaki

2013-03-01

Thermoelectric power generators will be required for future sensor network systems. SrTiO3 (STO) is one candidate thermoelectric material due to its non-toxicity and comparable power factor to Bismuth telluride. The energy conversion efficiency of SrTiO3-based thermoelectric energy conversion elements has been reported to be enhanced by quantum size effects, such as the two dimensional (2D) electron gas in SrTiO3/SrTi0.8Nb0.2O3/SrTiO3. Nevertheless, a complete understanding of the mechanisms for the reported increase in efficiency are missing owing to a lack of understanding of the thickness dependence of the transport properties. In the talk, we will present a study of the thickness dependence of the transport properties of SrTiO3/SrLaTiO3 and SrZrO3/SrLaTiO3 heterostructures. The SrZrO3/SrLaTiO3 interface has a large conduction band off-set of 1.9 eV which can be utilized to confine electrons in a 2D quantum well. Characterization of the thermopower, conductivity, and Hall effect will be presented as a function of the SrLaTiO3 thickness down to a few unit cells and the implications of the thickness dependence of the transport properties on carrier confinement and increasing the efficiency STO-based 2DEG quantum well structures will be discussed.

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE PAGES

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; ...

2016-04-27

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

Thermal conductivity of SrVO3-SrTiO3 thin films: Evidence of intrinsic thermal resistance at the interface between oxide layers

NASA Astrophysics Data System (ADS)

Katsufuji, T.; Saiki, T.; Okubo, S.; Katayama, Y.; Ueno, K.

2018-05-01

By using a technique of thermoreflectance that can precisely measure the thermal conductivity of thin films, we found that the thermal conductivity of SrVO3-SrTiO3 multilayer thin films normal to the surface was substantially reduced by decreasing the thickness of each layer. This indicates that a large intrinsic thermal resistance exists at the interface between SrVO3 and SrTiO3 in spite of the similar phononic properties for these two compounds.

Tunable Orbital-Selective Magnetic Interaction in Tricolor Oxide Interfaces

NASA Astrophysics Data System (ADS)

Cao, Yanwei; Kareev, Michael; Liu, Xiaoran; Choudhury, Debraj; Middey, Srimanta; Meyers, Derek; Chakhalian, Jak

2015-03-01

Recently, several theoretical scenarios of orbital-selective magnetic interactions were proposed to understand the emergence of the unexpected interfacial magnetism in the archetypical SrTiO3-based two-dimensional electron gas systems, the origin of which is still intriguing and not an entirely understood phenomenon in oxide interface physics. Experimentally, however, there thus far lacks a material system to directly demonstrate the magnetic interaction with orbital-selection (dxy vs. dxz/dyz) and eventually manipulate this magnetic interaction. To address this, here we induced 2DEG and localized magnetism into the same SrTiO3 layer by devising the heterostructure LaTiO3/SrTiO3/YTiO3. Combined electrical transport and atomic-resolved scanning transmission electron microscope with electron energy loss spectroscopy revealed that the magnetic localized electrons are formed by the spin transfer from the YTiO3 layer into 2DEG formed at the LaTiO3 /SrTiO3 interface, with the orbital occupancy and strength of the magnetic interaction controlled by the SrTiO3 layer thickness. Our work provides an ideal platform to explore the orbital physics driven by the interfacial magnetism with prospects for exciting spintronic applications.

Optically-Induced Persistent Magnetization in Oxygen Deficient Strontium Titanate

NASA Astrophysics Data System (ADS)

Crooker, Scott

2015-03-01

Interest in electronics and spintronics based on complex oxide materials has exploded in recent years, fueled by the ability to grow atomically-precise heterostructures of various oxides 1. A foundational material in this burgeoning field is strontium titanate, a (nominally) non-magnetic wide-bandgap semiconductor. Owing to its ubiquity in oxide materials science, studies of SrTiO3's interesting dielectric, lattice, and optical properties represent mature research areas. However, renewed interest in SrTiO3 was recently sparked by observations of unexpected spin and magnetization phenomena at interfaces between SrTiO3 and other nonmagnetic oxides 1. The formation and distribution of oxygen vacancies (VO) in SrTiO3 are widely thought to play an essential but as-yet-incompletely understood role in these emergent phenomena. Here we demonstrate a surprising new aspect to the phenomenology of magnetism in SrTiO3 by reporting the observation of an optically-induced and persistent magnetization in slightly oxygen-deficient SrTiO3-δ bulk crystals, using magnetic circular dichroism spectroscopy and optically-coupled SQUID studies 2. This magnetization appears below 18K, persists for hours below 10K, and is tunable via the polarization and wavelength of sub-bandgap (400-500 nm) light. As such, magnetic patterns can be ``written'' into SrTiO3-δ, and subsequently read out, using light alone. This magnetism occurs only in crystals containing VO, and is consistent with a metastable spin polarization of VO-related defect complexes. These data reveal a detailed interplay between magnetism, lattice defects, and light in an archetypal complex oxide material, which may yield new insights into the recent exciting spin physics observed at oxide interfaces.

Domain alignment within ferroelectric/dielectric PbTiO 3 /SrTiO 3 superlattice nanostructures

DOE PAGES

Park, Joonkyu; Mangeri, John; Zhang, Qingteng; ...

2018-01-01

The ferroelectric domain pattern within lithographically defined PbTiO 3/SrTiO 3ferroelectric/dielectric heteroepitaxial superlattice nanostructures is strongly influenced by the edges of the structures.

Charge transfer mechanism for the formation of metallic states at the KTaO3/SrTiO3 interface

NASA Astrophysics Data System (ADS)

Nazir, S.; Singh, N.; Schwingenschlögl, U.

2011-03-01

The electronic and optical properties of the KTaO3/SrTiO3 heterointerface are analyzed by the full-potential linearized augmented plane-wave approach of density functional theory. Optimization of the atomic positions points at subordinate changes in the crystal structure and chemical bonding near the interface, which is due to a minimal lattice mismatch. The creation of metallic interface states thus is not affected by structural relaxation but can be explained by charge transfer between transition metal and oxygen atoms. It is to be expected that a charge transfer is likewise important for related interfaces such as LaAlO3/SrTiO3. The KTaO3/SrTiO3 system is ideal for disentangling the complex behavior of metallic interface states, since almost no structural relaxation takes place.

Prediction of two-dimensional electron gas mediated magnetoelectric coupling at ferroelectric PbTiO3/SrTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Wei, Lan-ying; Lian, Chao; Meng, Sheng

2017-05-01

First-principles calculations predict the emergence of magnetoelectric coupling mediated by two-dimensional electron gas (2DEG) at the ferroelectric PbTiO3/SrTiO3 heterostructure. Free electrons endowed by naturally existing oxygen vacancies in SrTiO3 are driven to the heterostructure interface under the polarizing field of ferroelectric PbTiO3 to form a 2DEG. The electrons are captured by interfacial Ti atoms, which surprisingly exhibits ferromagnetism even at room temperature with a small critical density of ˜15.5 μ C /cm2 . The ferroelectricity-controlled ferromagnetism mediated by interfacial 2DEG shows strong magnetoelectric coupling strength, enabling convenient control of magnetism by electric field and vice versa. The PbTiO3/SrTiO3 heterostructure is cheap, easily grown, and controllable, promising future applications in low-cost spintronics and information storage at ambient condition.

Ultrafast modification of the polarity at LaAlO3/SrTiO3 interfaces

NASA Astrophysics Data System (ADS)

Rubano, A.; Günter, T.; Fiebig, M.; Granozio, F. Miletto; Marrucci, L.; Paparo, D.

2018-01-01

Oxide growth with semiconductorlike accuracy has led to atomically precise thin films and interfaces that exhibit a plethora of phases and functionalities not found in the oxide bulk material. This has yielded spectacular discoveries such as the conducting, magnetic, and even superconducting LaAlO3/SrTiO3 interfaces separating two prototypical insulating perovskite materials. All these investigations, however, consider the static state at the interface, although studies on fast oxide interface dynamics would introduce a powerful degree of freedom to understanding the nature of the LaAlO3/SrTiO3 interface state. Here, we show that the polarization state at the LaAlO3/SrTiO3 interface can be optically enhanced or attenuated within picoseconds. Our observations are explained by a model based on charge propagation effects in the interfacial vicinity and transient polarization buildup at the interface.

Water as probe molecule for midgap states in nanocrystalline strontium titanate by conventional and synchronous luminescence spectroscopy under ambient conditions

NASA Astrophysics Data System (ADS)

Taylor, Sean; Samokhvalov, Alexander

2017-03-01

Alkaline earth metal titanates are broad bandgap semiconductors with applications in electronic devices, as catalysts, photocatalysts, sorbents, and sensors. Strontium titanate SrTiO3 is of interest in electronic devices, sensors, in the photocatalytic hydrogen generation, as catalyst and sorbent. Both photocatalysis and operation of electronic devices rely upon the pathways of relaxation of excited charge in the semiconductor, including relaxation through the midgap states. We report characterization of nanocrystalline SrTiO3 at room temperature by "conventional" vs. synchronous luminescence spectroscopy and complementary methods. We determined energies of radiative transitions in the visible range through the two midgap states in the nanocrystalline SrTiO3. Further, adsorption and desorption of vapor of water as "probe molecule" for midgap states in the nanocrystalline SrTiO3 was studied, for the first time, by luminescence spectroscopy under ambient conditions. Emission of visible light from the nanocrystalline SrTiO3 is significantly increased upon desorption of water and decreased (quenched) upon adsorption of water vapor, due to interactions with the surface midgap states.

Electronic structure and optical properties of Ta-doped and (Ta, N)-codoped SrTiO3 from hybrid functional calculations

NASA Astrophysics Data System (ADS)

Liu, Yanyu; Zhou, Wei; Wu, Ping

2017-02-01

A systematic study has been carried out to research the effect of Ta monodoping and (Ta, N)-codoping on the electronic structure and optical properties of SrTiO3. The results indicate that the incorporation of N into the SrTiO3 lattice is in favor of the substitution of Ta at a Ti site, which is the most favorable structure with respect to both the energetic stability and high photocatalytic activity. Furthermore, the carrier recombination centers induced by Ta monodoping are passivated in the (Ta, N)-codoped SrTiO3 system with Ta at a Ti site. Simultaneous incorporation of N and Ta results in a band gap decreasing about 0.7 eV due to the appearance of the new states hybridized by N-p states with the O-p states above the valence band. The band alignment verifies that the (Ta, N)-codoped SrTiO3 simultaneously meets the criteria of band-edge energetic positions and band gap for the overall water splitting under visible light.

Synergistic effect of Au and Rh on SrTiO3 in significantly promoting visible-light-driven syngas production from CO2 and H2O.

PubMed

Li, Dewang; Ouyang, Shuxin; Xu, Hua; Lu, Da; Zhao, Ming; Zhang, Xueliang; Ye, Jinhua

2016-05-01

A novel photocatalyst constructed by Rh, Au, and SrTiO3 was developed to realize syngas photosynthesis from low-cost CO2 and H2O feedstock under visible-light irradiation. The synergistic effect of Rh and Au on SrTiO3 contributed to a 22- and 153-fold photoactivity magnification for syngas yield in contrast to Au@SrTiO3 and Rh@SrTiO3 samples, respectively.

An aging effect and its origin in GdBCO thin films

NASA Astrophysics Data System (ADS)

Schlesier, K.; Huhtinen, H.; Granroth, S.; Paturi, P.

2010-06-01

An aging effect investigation was made for GdBa2Cu3O7 (GdBCO) thin films grown on SrTiO3 (001) substrates with pulsed laser deposition (PLD) method from nanograined targets. The films were cut into two pieces where one piece was coated with gold cap layer while the other was left without coating. Both pieces were kept in ambient air during the half year measurement period. Magnetization measurements as well as phase purity, lattice parameter, oxygen effect and depth structure determination with x-ray diffraction (XRD) were made in one month interval. For structure and oxygen content, x-ray photoelectron spectroscopy measurements (XPS) were done in the beginning and in the end of the period. A reduction of the critical temperature and the critical current density, Jc, was found in the gold coated GdBCO film in ambient air in course of time. A smaller decrease of Jc was detected in uncoated GdBCO. No development of impurity phase, increase of a-orientation or reduction of the pinning structure was detected in uncoated GdBCO. However, a small development of impurity phase was found in gold coated GdBCO. The diminution of Tc and Jc is concluded to originate from oxygen release. No such a phenomenon was found in YBa2Cu3O7. We conclude that gold is not a proper cap layer at least for some applications.

Preparation, characterization and photocatalytic activities of TiO2-SrTiO3 composites

NASA Astrophysics Data System (ADS)

Wang, Yan; Zhu, Lianjie; Gao, Fubo; Xie, Hanjie

2017-01-01

Series of TiO2-SrTiO3 composites were synthesized by hydrothermal method, using TiO2 nanotube array as a precursor and Sr(OH)2 as a Sr source material. TiO2-SrTiO3 products with various composition were obtained by simply changing the reaction time. The as-synthesized products were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The optical properties were studied by means of UV-Vis absorption spectroscopy and photoluminescence (PL) spectra. Their photocatalytic activities were assessed by photodegradation of rhodamine B (RhB) solution and the photocatalytic reaction mechanism was discussed. The TiO2-SrTiO3 composites obtained at 2 h exhibits the highest activity for photodegradation of RhB.

Tunable dielectric response, resistive switching, and unconventional transport in SrTiO3

NASA Astrophysics Data System (ADS)

Mikheev, Evgeny

The first section of this thesis discusses integration of SR TiO3 grown by molecular beam epitaxy (MBE) in vertical device structures. One target application is as a tunable dielectric. Parallel plate capacitors based on epitaxial Pt(001) bottom electrodes and (Ba,Sr)TiO 3 dielectric layers grown by MBE are demonstrated. Optimization of structural quality of the vertical stack is shown to produce very low dielectric loss combined with very high tunability of the dielectric constant by DC bias. This results in considerable improvement of common figures of merit for varactor performance in comparison to previous reports. Another target application for transition metals oxides is in resistive switching memories, which are based on the hysteretic current-voltage response observed in many oxide-based Schottky junctions and capacitors. A study on the role of metal/oxide interface quality is presented. In particular, the use of epitaxial Pt(001) as Schottky contacts to Nb:SRTiO 3 is shown to suppress resistive switching hysteresis by eliminating unintentional contributions to interface capacitance. Such uncontrolled factors are discussed as a probable root cause for poor reproducibility in resistive switching memories, currently a ubiquitous challenge in the field. Potential routes towards stabilizing reproducible switching through intentional control of defect densities in high-quality structures are discussed, including a proof of concept demonstration using Schottky junctions incorporating intentionally non-stoichiometric SRTiO3 interlayers grown by MBE. The second section of this thesis is concerned with unconventional electronic transport in SRTiO3. A systematic description of scattering mechanisms will be presented for three related material systems: uniformly-doped SRTiO3, two-dimensional electron liquids (2DEL) at SRTiO3/RTiO 3 interfaces (R = Gd, Sm) and confined 2DELs in RTiO3/SRTiO3/ RTiO3 quantum wells. In particular, the prevalence of a well-defined T2 scattering rate in doped SRTiO3 will be discussed as being incompatible with its traditional assignment as electron-electron scattering in a Fermi liquid. In the case of ultrathin SRTiO3 quantum wells bound by RTiO3, evidence will be presented for the existence of a quantum critical point. This refers to a quantum phase transition at zero temperature towards an ordered phase in SRTiO 3. This transition is driven by increasing confinement of the 2DEL, with a critical point located at the 5 SrO layer thickness of SRTiO 3. It is manifested in anomalous temperature exponents of the power law resistivity. Additionally, a well-defined trend for the separation of the Hall and longitudinal scattering rates will be presented, analogously to a similar effect observed in the normal state of high-Tc superconductors. In particular, a unique pattern of residual scattering separation was documented, consistent with a quantum critical correction to the Hall lifetime that is divergent at the quantum critical point.

Electronic Structure and Band Alignment at the NiO and SrTiO3 p-n Heterojunctions.

PubMed

Zhang, Kelvin H L; Wu, Rui; Tang, Fengzai; Li, Weiwei; Oropeza, Freddy E; Qiao, Liang; Lazarov, Vlado K; Du, Yingge; Payne, David J; MacManus-Driscoll, Judith L; Blamire, Mark G

2017-08-09

Understanding the energetics at the interface, including the alignment of valence and conduction bands, built-in potentials, and ionic and electronic reconstructions, is an important challenge in designing oxide interfaces that have controllable multifunctionalities for novel (opto-)electronic devices. In this work, we report detailed investigations on the heterointerface of wide-band-gap p-type NiO and n-type SrTiO 3 (STO). We show that despite a large lattice mismatch (∼7%) and dissimilar crystal structure, high-quality NiO and Li-doped NiO (LNO) thin films can be epitaxially grown on STO(001) substrates through a domain-matching epitaxy mechanism. X-ray photoelectron spectroscopy studies indicate that NiO/STO heterojunctions form a type II "staggered" band alignment. In addition, a large built-in potential of up to 0.97 eV was observed at the interface of LNO and Nb-doped STO (NbSTO). The LNO/NbSTO p-n heterojunctions exhibit not only a large rectification ratio of 2 × 10 3 but also a large ideality factor of 4.3. The NiO/STO p-n heterojunctions have important implications for applications in photocatalysis and photodetectors as the interface provides favorable energetics for facile separation and transport of photogenerated electrons and holes.

Fabrication and chemical composition of RF magnetron sputtered Tl-Ca-Ba-Cu-O high Tc superconducting thin films

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Radpour, F.; Kapoor, V. J.; Lemon, G. H.

1990-01-01

The preparation of TlCaBaCuO superconducting thin films on (100) SrTiO3 substrates is described, and the results of their characterization are presented. Sintering and annealing the thin films in a Tl-rich ambient yielded superconductivity with a Tc of 107 K. The results of an XPS study support two possible mechanisms for the creation of holes in the TlCaBaCuO compound: (1) partial substitution of Ca(2+) for Tl(3+), resulting in hole creation, and (2) charge transfer from Tl(3+) to the CuO layers, resulting in a Tl valence between +3 and +1.

Single-Gap Superconductivity and Dome of Superfluid Density in Nb-Doped SrTiO 3

NASA Astrophysics Data System (ADS)

Thiemann, Markus; Beutel, Manfred H.; Dressel, Martin; Lee-Hone, Nicholas R.; Broun, David M.; Fillis-Tsirakis, Evangelos; Boschker, Hans; Mannhart, Jochen; Scheffler, Marc

2018-06-01

SrTiO3 exhibits a superconducting dome upon doping with Nb, with a maximum critical temperature Tc≈0.4 K . Using microwave stripline resonators at frequencies from 2 to 23 GHz and temperatures down to 0.02 K, we probe the low-energy optical response of superconducting SrTiO3 with a charge carrier concentration from 0.3 to 2.2 ×1020 cm-3 , covering the majority of the superconducting dome. We find single-gap electrodynamics even though several electronic bands are superconducting. This is explained by a single energy gap 2 Δ due to gap homogenization over the Fermi surface consistent with the low level of defect scattering in Nb-doped SrTiO3 . Furthermore, we determine Tc, 2 Δ , and the superfluid density as a function of charge carrier concentration, and all three quantities exhibit the characteristic dome shape.

Growth control of oxygen stoichiometry in homoepitaxial SrTiO 3 films by pulsed laser epitaxy in high vacuum

DOE PAGES

Lee, Ho Nyung; Ambrose Seo, Sung S.; Choi, Woo Seok; ...

2016-01-29

In many transition metal oxides, oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a challenge. In this work, we show that, through proper control of the plume kinetic energy, stoichiometric crystalline films can be synthesized without generating oxygen defects even in high vacuum. We use a model homoepitaxial system of SrTiO 3 (STO) thin films onmore » single crystal STO substrates. Physical property measurements indicate that oxygen vacancy generation in high vacuum is strongly influenced by the energetics of the laser plume, and it can be controlled by proper laser beam delivery. Thus, our finding not only provides essential insight into oxygen stoichiometry control in high vacuum for understanding the fundamental properties of STO-based thin films and heterostructures, but it expands the utility of pulsed laser epitaxy of other materials as well.₃« less

Dynamic Scaling and Island Growth Kinetics in Pulsed Laser Deposition of SrTiO 3

DOE PAGES

Eres, Gyula; Tischler, J. Z.; Rouleau, C. M.; ...

2016-11-11

We use real-time diffuse surface x-ray diffraction to probe the evolution of island size distributions and its effects on surface smoothing in pulsed laser deposition (PLD) of SrTiO 3. In this study, we show that the island size evolution obeys dynamic scaling and two distinct regimes of island growth kinetics. Our data show that PLD film growth can persist without roughening despite thermally driven Ostwald ripening, the main mechanism for surface smoothing, being shut down. The absence of roughening is concomitant with decreasing island density, contradicting the prevailing view that increasing island density is the key to surface smoothing inmore » PLD. We also report a previously unobserved crossover from diffusion-limited to attachment-limited island growth that reveals the influence of nonequilibrium atomic level surface transport processes on the growth modes in PLD. We show by direct measurements that attachment-limited island growth is the dominant process in PLD that creates step flowlike behavior or quasistep flow as PLD “self-organizes” local step flow on a length scale consistent with the substrate temperature and PLD parameters.« less

Dynamic Scaling and Island Growth Kinetics in Pulsed Laser Deposition of SrTiO 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eres, Gyula; Tischler, J. Z.; Rouleau, C. M.

We use real-time diffuse surface x-ray diffraction to probe the evolution of island size distributions and its effects on surface smoothing in pulsed laser deposition (PLD) of SrTiO 3. In this study, we show that the island size evolution obeys dynamic scaling and two distinct regimes of island growth kinetics. Our data show that PLD film growth can persist without roughening despite thermally driven Ostwald ripening, the main mechanism for surface smoothing, being shut down. The absence of roughening is concomitant with decreasing island density, contradicting the prevailing view that increasing island density is the key to surface smoothing inmore » PLD. We also report a previously unobserved crossover from diffusion-limited to attachment-limited island growth that reveals the influence of nonequilibrium atomic level surface transport processes on the growth modes in PLD. We show by direct measurements that attachment-limited island growth is the dominant process in PLD that creates step flowlike behavior or quasistep flow as PLD “self-organizes” local step flow on a length scale consistent with the substrate temperature and PLD parameters.« less

Thermoelectric properties of hole-doped SrTiO3 thin films

NASA Astrophysics Data System (ADS)

Ferreiro-Vila, Elias; Sarantopoulos, Alexandros; Leboran, Victor; Bui, Cong-Tinh; Rivadulla, Francisco; Condense matter Chemistry Group Team

2014-03-01

Two dimensional conductors are expected to show an improved thermoelectric performance due the positive effect of quantum confinement on the thermoelectric power, and the decrease of thermal conductivity by interface boundary scattering. The recent report of a large increase of the thermoelectric power in quantum wells of Nb-doped SrTiO3 (STO) seems to be in agreement with this hypothesis. However, extrinsic effects like the existence of oxygen vacancies that propagate away from the interface cannot be ruled out, and the results are far from clear. Here we will show the thermoelectric properties (electrical conductivity, Seebeck coefficient, and Hall effect), of epitaxial thin-films of (La,Nb)-doped STO. The films have been deposited by PLD on different substrates (STO, LAO...) to study the effect of tensile/compressive stress on the thermoelectric properties of the system. The oxygen pressure during the deposition was carefully controlled to tune the amount of oxygen vacancies and to compare with the cation doping. We have performed a systematic study of the transport properties as a function of thickness and doping, which along with the effect of stress, allows to understand the effect of charge density and dimensionality in an oxide system with promising thermoelectric properties.

Magnetoresistance in the superconducting state at the (111) LaAlO3/SrTiO3 interface

NASA Astrophysics Data System (ADS)

Davis, S.; Huang, Z.; Han, K.; Ariando, Venkatesan, T.; Chandrasekhar, V.

2017-10-01

Condensed-matter systems that simultaneously exhibit superconductivity and ferromagnetism are rare due the antagonistic relationship between conventional spin-singlet superconductivity and ferromagnetic order. In materials in which superconductivity and magnetic order are known to coexist (such as some heavy-fermion materials), the superconductivity is thought to be of an unconventional nature. Recently, the conducting gas that lives at the interface between the perovskite band insulators LaAlO3 (LAO) and SrTiO3 (STO) has also been shown to host both superconductivity and magnetism. Most previous research has focused on LAO/STO samples in which the interface is on the (001) crystal plane. Relatively little work has focused on the (111) crystal orientation, which has hexagonal symmetry at the interface, and has been predicted to have potentially interesting topological properties, including unconventional superconducting pairing states. Here we report measurements of the magnetoresistance of (111) LAO/STO heterostructures at temperatures at which they are also superconducting. As with the (001) structures, the magnetoresistance is hysteretic, indicating the coexistence of magnetism and superconductivity, but in addition, we find that this magnetoresistance is anisotropic. Such an anisotropic response is completely unexpected in the superconducting state and suggests that (111) LAO/STO heterostructures may support unconventional superconductivity.

Epitaxial phase diagrams of SrTiO3, CaTiO3, and SrHfO3: Computational investigation including the role of antiferrodistortive and A -site displacement modes

NASA Astrophysics Data System (ADS)

Angsten, Thomas; Asta, Mark

2018-04-01

Ground-state epitaxial phase diagrams are calculated by density functional theory (DFT) for SrTiO3, CaTiO3, and SrHfO3 perovskite-based compounds, accounting for the effects of antiferrodistortive and A -site displacement modes. Biaxial strain states corresponding to epitaxial growth of (001)-oriented films are considered, with misfit strains ranging between -4 % and 4%. Ground-state structures are determined using a computational procedure in which input structures for DFT optimizations are identified as local minima in expansions of the total energy with respect to strain and soft-mode degrees of freedom. Comparison to results of previous DFT studies demonstrates the effectiveness of the computational approach in predicting ground-state phases. The calculated results show that antiferrodistortive octahedral rotations and associated A -site displacement modes act to suppress polarization and reduce the epitaxial strain energy. A projection of calculated atomic displacements in the ground-state epitaxial structures onto soft-mode eigenvectors shows that three ferroelectric and six antiferrodistortive displacement modes are dominant at all misfit strains considered, with the relative contributions from each varying systematically with the strain. Additional A -site displacement modes contribute to the atomic displacements in CaTiO3 and SrHfO3, which serve to optimize the coordination of the undersized A -site cation.

Pulsed-Laser Crystallization of Ferroelectric/Piezoelectric Oxide Thin Films

NASA Astrophysics Data System (ADS)

Rajashekhar, Adarsh

Integration of ferroelectric/piezoelectric thin films, such as those of lead zirconate titanate (PZT), with temperature sensitive substrates (complementary metal oxide semiconductors (CMOS), or polymers) would benefit from growth at substrate temperatures below 400°C. However, high temperatures are usually required for obtaining good quality PZT films via conventional routes like rapid thermal processing (>550°C). Those conditions are not compatible either with polymer substrates or completed CMOS circuits and dictate exploration of alternative methods to realize integration with such substrates. In part of this work, factors influencing KrF excimer laser induced crystallization of amorphous sputtered Pb(Zr0.30Ti0.70)O3 thin films at substrate temperatures < 215°C were investigated. (111) Pt/Si substrates were utilized to understand the process window. Laser energy densities studied were in the range 35 - 85 mJ/cm2. The Pb content in the films was varied via the Ar gas pressure (in the range 5 mTorr - 9 mTorr) during sputtering of amorphous films. It was seen that a higher Pb content in the asdeposited films aided nucleation of the perovskite phase. Ozone-containing ambients (10% O3/90% O2) during the annealing promoted the formation of the metastable Pb-rich pyrochlore/fluorite phase, while annealing in pure oxygen produced the perovskite phase at relatively lower annealing laser energy densities. Heterogeneous nucleation from the substrate is favored on utilizing a layer-by-layer growth and crystallization process. Films were also grown on polymers using this method. Ferroelectric switching was demonstrated, but extensive process optimization would be needed to reduce leakage and porosity. Real time laser annealing during growth allows for scaling of the layer-by-layer growth process. A pulsed laser deposition system with in situ laser annealing was thus designed, built, and utilized to grow Pb(Zr 0.52Ti0.48)O3 thin films on a laser crystallized Pb(Zr0.20Ti0.80)O3 seed layer, at a temperature of 370°C. Polycrystalline 1.1 microm thick films exhibited columnar grains with small grain sizes ( 30 nm). The films showed well-saturated hysteresis loops (with a remanent polarization of 25 microC/cm2, and a coercive field of 50 kV/cm) and exhibited loss tangents <2.5% with a permittivity of 730. Film orientation could be controlled via the substrate choice; {111} Pb(Zr0.52Ti0.48)O3 films were grown on oriented (111) Pb(Zr0.30Ti0.70)O3 sol-gel seed layers, while epitaxial {001} films were prepared on (100) SrTiO 3 single crystals. In order to study the microstructure evolution in these films, in situ pulsed-laser annealing was used to grow crystalline lead zirconate titanate (PbZr0.52Ti0.48O3) thin films at a substrate temperature of 370°C on PbZr0.30Ti 0.70O3-buffered platinized silicon substrates. Transmission electron microscopy (TEM) analysis indicated that the films were well crystallized into columnar grains, but with pores segregated at the grain boundaries. Lateral densification of the grain columns was significantly improved by reducing the partial pressure of oxygen from 120 mTorr to 50 mTorr, presumably due to enhanced adatom mobility at the surface accompanying increased bombardment. It was found that varying the fractional annealing duration with respect to the deposition duration produced little effect on lateral grain growth. However, increasing the fractional annealing duration led to shift of 111 PZT X-ray diffraction peaks to higher 2theta values, suggesting residual in-plane tensile stresses in the films. Thermal simulations were used to understand the annealing process. Evolution of the film microstructure is described in terms of transient heating from the pulsed laser determining the nucleation events, while the energy of the arriving species dictates grain growth/coarsening.

The enhancement of photovoltaic parameters in dye-sensitized solar cells of nano-crystalline SnO2 by incorporating with large SrTiO3 particles.

PubMed

Aponsu, G M L P; Wijayarathna, T R C K; Perera, I K; Perera, V P S; Siriwardhana, A C P K

2013-05-15

In this paper, the performance of nano-porous electrodes made of a composite material of SrTiO3 and SnO2 are compared with those made of bare SnO2. When these particular devices are analyzed in a comparative mode the results confirmed the enhancement of photovoltaic parameters in the former device. The performance of respective cells were examined by several methods including I-V characteristic measurements, photocurrent action spectra, dark I-V measurements, Mott-Schottky measurements and X-ray diffraction measurements. Even though such improvements in this particular cell could be explicated by the formation of a potential energy barrier of SrTiO3 particles of comparably large width at the SrTiO3/SnO2 interface, the passivation of voids in the SnO2 film by SrTiO3 particles to a certain extent could not be totally ruled out. Besides, high energetic electrons injected by dye molecules move more credibly through mini-bands formed in the chain of nano-crystalline SnO2 particles to the back contact. The blocking of the recombination path and the shifting up of the uppermost electron occupied level of SnO2 accompanying the conduction band edge in the SrTiO3/SnO2 composite film, may have lead to the observed enhancement of the fill factor and photovoltage, respectively. Copyright © 2013 Elsevier B.V. All rights reserved.

High- T c superconductivity at the interface between the CaCuO 2 and SrTiO 3 insulating oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Castro, D.; Cantoni, C.; Ridolfi, F.

2015-09-28

At interfaces between complex oxides it is possible to generate electronic systems with unusual electronic properties, which are not present in the isolated oxides. One important example is the appearance of superconductivity at the interface between insulating oxides, although, until now, with very low T c. We report the occurrence of high T c superconductivity in the bilayer CaCuO 2/SrTiO 3, where both the constituent oxides are insulating. In order to obtain a superconducting state, the CaCuO 2/SrTiO 3 interface must be realized between the Ca plane of CaCuO 2 and the TiO 2 plane of SrTiO 3. Only inmore » this case can oxygen ions be incorporated in the interface Ca plane, acting as apical oxygen for Cu and providing holes to the CuO 2 planes. In addition, a detailed hole doping spatial profile can be obtained by scanning transmission electron microscopy and electron-energy-loss spectroscopy at the O K edge, clearly showing that the (super)conductivity is confined to about 1–2 CaCuO 2 unit cells close to the interface with SrTiO 3. The results obtained for the CaCuO 2/SrTiO 3 interface can be extended to multilayered high T c cuprates, contributing to explaining the dependence of T c on the number of CuO 2 planes in these systems.« less

Epitaxial BiFeO3 thin films fabricated by chemical solution deposition

NASA Astrophysics Data System (ADS)

Singh, S. K.; Kim, Y. K.; Funakubo, H.; Ishiwara, H.

2006-04-01

Epitaxial BiFeO3 (BFO) thin films were fabricated on (001)-, (110)-, and (111)-oriented single-crystal SrRuO3(SRO )/SrTiO3(STO) structures by chemical solution deposition. X-ray diffraction indicates the formation of an epitaxial single-phase perovskite structure and pole figure measurement confirms the cube-on-cube epitaxial relationship of BFO ‖SRO‖STO. Chemical-solution-deposited BFO films have a rhombohedral structure with lattice parameter of 0.395nm, which is the same structure as that of a bulk single crystal. The remanent polarization of approximately 50μC/cm2 was observed in BFO (001) thin films at 80K.

In situ x-ray surface diffraction chamber for pulsed laser ablation film growth studies

NASA Astrophysics Data System (ADS)

Tischler, J. Z.; Eres, G.; Lowndes, D. H.; Larson, B. C.; Yoon, M.; Chiang, T.-C.; Zschack, Paul

2000-06-01

Pulsed laser deposition is highly successful for growing complex films such as oxides for substrate buffer layers and HiTc oxide superconductors. A surface diffraction chamber has been constructed to study fundamental aspects of non-equilibrium film growth using pulsed laser deposition. Due to the pulsed nature of the ablating laser, the deposited atoms arrive on the substrate in short sub-millisecond pulses. Thus monitoring the surface x-ray diffraction following individual laser pulses (with resolution down to ˜1 ms) provides direct information on surface kinetics and the aggregation process during film growth. The chamber design, based upon a 2+2 surface diffraction geometry with the modifications necessary for laser ablation, is discussed, and initial measurements on homo-epitaxial growth of SrTiO3 are presented.

Persistent Step-Flow Growth of Strained Films on Vicinal Substrates

NASA Astrophysics Data System (ADS)

Hong, Wei; Lee, Ho Nyung; Yoon, Mina; Christen, Hans M.; Lowndes, Douglas H.; Suo, Zhigang; Zhang, Zhenyu

2005-08-01

We propose a model of persistent step flow, emphasizing dominant kinetic processes and strain effects. Within this model, we construct a morphological phase diagram, delineating a regime of step flow from regimes of step bunching and island formation. In particular, we predict the existence of concurrent step bunching and island formation, a new growth mode that competes with step flow for phase space, and show that the deposition flux and temperature must be chosen within a window in order to achieve persistent step flow. The model rationalizes the diverse growth modes observed in pulsed laser deposition of SrRuO3 on SrTiO3.

Epitaxial effects in thin films of high-Tc cuprates with the K2NiF4 structure

NASA Astrophysics Data System (ADS)

Naito, Michio; Sato, Hisashi; Tsukada, Akio; Yamamoto, Hideki

2018-03-01

La2-xSrxCuO4 (LSCO) and La2-xBaxCuO4 (LBCO) have been recognized as the archetype materials of "hole-doped" high-Tc superconductors. Their crystal structures are relatively simple with a small number of constituent cation elements. In addition, the doping level can be varied by the chemical substitution over a wide range enough to obtain the full spectrum of doping-dependent electronic and magnetic properties. These attractive features have dedicated many researchers to thin-film growth of LSCO and LBCO. The critical temperature (Tc) of LSCO and LBCO is sensitive to strain as manifested by a positive pressure coefficient of Tc in bulk samples. In general, films are strained if they are grown on lattice-mismatched substrates (epitaxial strain). Early attempts (before 1997) at the growth of LSCO and LBCO films resulted in depressed Tc below 30 K as they were grown on a commonly used SrTiO3 substrate (in-plane lattice parameter asub = 3.905 Å): the in-plane lattice parameters of LSCO and LBCO are ≤3.80 Å, and hence tensile epitaxial strain is introduced. The situation was changed by the use of LaSrAlO4 substrates with a slightly shorter in-plane lattice constant (asub = 3.756 Å). On LaSrAlO4 substrates, the Tc reaches 45 K in La1.85Sr0.15CuO4, 47 K in La1.85Ba0.15CuO4, and 56 K in ozone-oxidized La2CuO4+δ films, substantially higher than the Tc's of the bulk compounds. The Tc increase in La1.85Sr0.15CuO4 films on LaSrAlO4 and decrease on SrTiO3 are semi-quantitatively in accord with the phenomenological estimations based on the anisotropic strain coefficients of Tc (dTc/dεi). In this review article, we describe the growth and properties of films of cuprates having the K2NiF4 structure, mainly focusing on the increase/decrease of Tc by epitaxial strain and quasi-stable phase formation by epitaxial stabilization. We further extract the structural and/or physical parameters controlling Tc toward microscopic understanding of the variation of Tc by epitaxial strain.

Get a Grip: Substrate Orientation and Digital Grasping Pressures in Strepsirrhines.

PubMed

Congdon, Kimberly A; Ravosa, Matthew J

2016-01-01

Skeletal functional morphology in primates underlies many fossil interpretations. Understanding the functional correlates of arboreal grasping is central to identifying locomotor signatures in extinct primates. We tested 3 predictions linking substrate orientation and digital grasping pressures: (1) below-branch pressures are greater than above-branch and vertical-branch pressures; (2) there is no difference in pressure exerted across digits within autopods at any substrate orientation, and (3) there is no difference in pressure exerted between homologous digits across autopods at any substrate orientation. Adult males and females from 3 strepsirrhine species crossed an artificial arboreal substrate oriented for above-, below- and vertical-branch locomotion. We compared digital pressures within and across behaviors via ANOVA and Tukey's Honest Significant Difference test. Results show limited support for all predictions: below-branch pressures exceeded vertical-branch pressures and above-branch pressures for some digits and species (prediction 1), lateral digits often exerted greater pressures than medial digits (prediction 2), and pedal digits occasionally exerted greater pressures than manual digits during above-branch and vertical orientations but less often for below-branch locomotion (prediction 3). We observed functional variability across autopods, substrate and species that could underlie morphological variation within and across primates. Future work should consider the complexity of arboreality when inferring locomotor modes in fossils. © 2016 S. Karger AG, Basel.

Magnetic Orders of LaTiO3 and YTiO3 Under Epitaxial Strain: a First-Principles study

NASA Astrophysics Data System (ADS)

Weng, Yakui; Huang, Xin; Tang, Yankun; Dong, Shuai

2014-03-01

Perovskite RTiO3 family is a typical Mott-insulator with localized 3d electrons. In this work, the epitaxial strain effects on the ground magnetic orders of LaTiO3 and YTiO3 films have been studied using the first-principles density-functional theory. For the YTiO3 films, A-type antiferromagnetic order emerges against the original ferromagnetic order under the in-plane compressive strain by LaAlO3 (001) substrate, although the A-type antiferromagnetic order does not exist in any RTiO3 bulks. Then, for the LaTiO3 films under the compressive strain, e.g. LaTiO3 films grown on LaAlO3, LaGaO3, and SrTiO3 substrates, undergo a phase transition from the original G-type antiferromagnetism to A-type antiferromagnetism. While under the tensile strain, e.g. grown on the BaTiO3 and LaScO3 substrate, LaTiO3 films show a tendency to transit to the C-type antiferromagnetism. Furthermore, our calculations find that the magnetic transitions under epitaxial strain do not change the insulating fact of LaTiO3 and YTiO3.

Symmetry of Epitaxial BiFeO3 Films in the Ultrathin Regime

NASA Astrophysics Data System (ADS)

Yang, Yongsoo; Schlep&üTz, Christian; Adamo, Carolina; Schlom, Darrell; Clarke, Roy

2013-03-01

BiFeO3 (BFO) films grown on SrTiO3 (STO) with a SrRuO3 buffer layer exhibit a monoclinic structure at thicknesses greater than 40 nm, but higher structural symmetry can be observed for thinner films [Phys. Rev. B 81, 144115 (2010)]. We report a structural phase transition from monoclinic to tetragonal in ultra-thin BFO films grown directly on (100)-oriented STO. X-ray diffraction measurements of 3-dimensional reciprocal space maps reveal half-integer order peaks due to oxygen octahedral tilting. When the film thickness is decreased below 20 unit cells, the integer-order Bragg peak splitting associated with the presence of multiple domains of the monoclinic phase disappears. Instead, a single peak that is commensurate with the STO substrate lattice appears. The diffraction pattern has four-fold symmetry, ruling out the presence of a single monoclinic domain in favor of a tetragonal film structure. The evolution of the oxygen octahedra tilt pattern inferred from the intensities of half-order peaks suggests that this transition originates from the corner-connectivity of oxygen atoms at the interface between BFO and STO, and also strongly supports this monoclinic to tetragonal transition. Supported in part by the U.S. Department of Energy (DE-FG02-06ER46273). Measurements performed at Sectors 13-BMC, 33-IDD, 33-BMC of the Advanced Photon Source, Argonne National Laboratory, USA (DOE contract No. DE-AC02-06CH11357).

Understanding Methanol Coupling on SrTiO 3 from First Principles

DOE PAGES

Huang, Runhong; Fung, Victor; Zhang, Yafen; ...

2018-03-19

Perovskites are interesting materials for catalysis due to their great tunability. However, the correlation of many reaction processes to the termination of a perovskite surface is still unclear. In this paper, we use the methanol coupling reaction on the SrTiO 3(100) surface as a probe reaction to investigate direct C–C coupling from a computational perspective. We use density functional theory to assess methanol adsorption, C–H activation, and direct C–C coupling reactions on the SrTiO 3(100) surface of different terminations. We find that, although methanol molecules dissociatively adsorb on both A and B terminations with similar strength, the dehydrogenation and C–Cmore » coupling reactions have significantly lower activation energies on the B termination than on the A termination. The predicted formation of methoxy and acetate on the SrTiO 3(100) B termination can well explain the ambient-pressure XPS data of methanol on the single-crystal SrTiO 3(100) surface at 250 °C. Finally, this work suggests that a choice of B termination of perovskites would be beneficial for the C–C coupling reaction of methanol.« less

Fabrication of SrTiO3 nanotubes via an isomorphic conversion strategy

NASA Astrophysics Data System (ADS)

Yang, Dong; Zou, Xiaoyan; Tong, Zhenwei; Nan, Yanhu; Ding, Fei; Jiang, Zhongyi

2018-02-01

One-dimensional nanotubes have attracted enormous attention due to their specific structure and excellent performance since the carbon nanotube was prepared. In this study, the open-ended SrTiO3 nanotubes (STNTs) have been fabricated for the first time via an isomorphic conversion strategy using the protonated titanate nanotubes (HTNTs) as the precursor and template under the hydrothermal treatment. The as-prepared STNTs consist of uniform and continuous multilayers, having inner and outer diameters about 8.0 and 13 nm. The STNT formation involves the exchange of Sr2+ ions with H+ ions in HTNTs and then in situ growth of cubic SrTiO3 crystals by the templating of HTNT frameworks. It is found that the diffusion process of Sr2+ ions plays a critical role in controlling the nanotube morphology of SrTiO3 crystals. In addition, the SrTiO3 nanotubes exhibit high photocatalytic activity for the Cr(VI) reduction, which can reduce nearly 100% Cr(VI) within 6 h under simulated sunlight irradiation. The current strategy may be broadly applicable for fabricating the nanotubes from raw materials without 2D layered nanostructure. [Figure not available: see fulltext.

δ-Doping of oxygen vacancies dictated by thermodynamics in epitaxial SrTiO 3 films

DOE PAGES

Li, Fengmiao; Yang, Fang; Liang, Yan; ...

2017-06-01

Homoepitaxial SrTiO 3(110) film is grown by molecular beam epitaxy in ultra-high vacuum with oxygen diffusing from substrate as the only oxidant. The resulted oxygen vacancies (V Os) are found to be spatially confined within few subsurface layers only, forming a quasi-two-dimensional doped region with a tunable high concentration. Such a δ-function distribution of V Os is essentially determined by the thermodynamics associated with the surface reconstruction, and facilitated by the relatively high growth temperature. Here, our results demonstrate that it is feasible to tune V Os distribution at the atomic scale by controlling the lattice structure of oxide surfaces.more » Transition metal oxide interfaces have exhibited a variety of novel phenomena, including the high-mobility two-dimensional electron gas, superconductivity and unusual magnetism. While these phenomena are inherently related to the artificially designed architecture, oxygen vacancies (V Os) are recognized to be particularly important in determining the exotic behaviors of the oxides systems. As electron donors in oxides, V Os were observed to be one of the major factors for the high carrier density at the LaAlO 3/SrTiO 3 interface. V Os induce ferromagnetism in the epitaxial LaCoO 3 films via the ordering of excess electrons in Co 3d orbit. It was also suggested that the existence of V Os plays an important role in the formation of undesirable insulating phase in ultrathin films of many metallic oxide materials, referred to as the “dead layer” behavior. How V Os are involved in such complex phenomena is still unclear. One essential issue toward the design of emergent properties of oxide films is how to characterize and control V Os at the atomic scale. Recently, quantitative measurements of V O concentration have been realized with high spatial resolution benefited by the development of the state-of-the-art aberration-corrected scanning transmission microscope (STEM) and related spectroscopy techniques. However, tuning the V O density precisely by growth control is still extremely challenging. Different oxidants, i.e., molecular O 2, O 3 and atomic O, have been used with different feeding pressure during the growth. This approach is limited by thermodynamics of the material since the pressure of oxidant has to coordinate with temperature and other parameters in order to ensure the formation of the desired phase. In many cases the optimal condition for oxygen stoichiometry cannot be reached, and residual V Os are inevitably formed. It has been reported that V Os even form inhomogeneous clusters in SrTiO 3 (STO) films. Post annealing is another thermodynamic approach and seems to be effective to reduce the V O density. However, it does not allow the precise control of V Os distribution at the atomic scale either. In the current work, to study the control of V Os at the atomic scale, we grow SrTiO 3 homoepitaxial films along the polar [110] direction. Atomically well-defined (4 × 1) reconstruction is maintained on the surface all through the growth [see Fig. 1 (a) and (b)], which compensates the polarity. More importantly, the energy configuration associated with the surface reconstruction results in the spatial confinement of V Os within only few subsurface layers of the film, while their concentration remains extremely low on the topmost surface and in the bulk of STO substrate. In conclusion, we show that such a quasi-two-dimensional (2D) V O-doped layer, mimicking the δ-doping case in conventional semiconductors, can be precisely controlled.« less

δ-Doping of oxygen vacancies dictated by thermodynamics in epitaxial SrTiO 3 films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Fengmiao; Yang, Fang; Liang, Yan

Homoepitaxial SrTiO 3(110) film is grown by molecular beam epitaxy in ultra-high vacuum with oxygen diffusing from substrate as the only oxidant. The resulted oxygen vacancies (V Os) are found to be spatially confined within few subsurface layers only, forming a quasi-two-dimensional doped region with a tunable high concentration. Such a δ-function distribution of V Os is essentially determined by the thermodynamics associated with the surface reconstruction, and facilitated by the relatively high growth temperature. Here, our results demonstrate that it is feasible to tune V Os distribution at the atomic scale by controlling the lattice structure of oxide surfaces.more » Transition metal oxide interfaces have exhibited a variety of novel phenomena, including the high-mobility two-dimensional electron gas, superconductivity and unusual magnetism. While these phenomena are inherently related to the artificially designed architecture, oxygen vacancies (V Os) are recognized to be particularly important in determining the exotic behaviors of the oxides systems. As electron donors in oxides, V Os were observed to be one of the major factors for the high carrier density at the LaAlO 3/SrTiO 3 interface. V Os induce ferromagnetism in the epitaxial LaCoO 3 films via the ordering of excess electrons in Co 3d orbit. It was also suggested that the existence of V Os plays an important role in the formation of undesirable insulating phase in ultrathin films of many metallic oxide materials, referred to as the “dead layer” behavior. How V Os are involved in such complex phenomena is still unclear. One essential issue toward the design of emergent properties of oxide films is how to characterize and control V Os at the atomic scale. Recently, quantitative measurements of V O concentration have been realized with high spatial resolution benefited by the development of the state-of-the-art aberration-corrected scanning transmission microscope (STEM) and related spectroscopy techniques. However, tuning the V O density precisely by growth control is still extremely challenging. Different oxidants, i.e., molecular O 2, O 3 and atomic O, have been used with different feeding pressure during the growth. This approach is limited by thermodynamics of the material since the pressure of oxidant has to coordinate with temperature and other parameters in order to ensure the formation of the desired phase. In many cases the optimal condition for oxygen stoichiometry cannot be reached, and residual V Os are inevitably formed. It has been reported that V Os even form inhomogeneous clusters in SrTiO 3 (STO) films. Post annealing is another thermodynamic approach and seems to be effective to reduce the V O density. However, it does not allow the precise control of V Os distribution at the atomic scale either. In the current work, to study the control of V Os at the atomic scale, we grow SrTiO 3 homoepitaxial films along the polar [110] direction. Atomically well-defined (4 × 1) reconstruction is maintained on the surface all through the growth [see Fig. 1 (a) and (b)], which compensates the polarity. More importantly, the energy configuration associated with the surface reconstruction results in the spatial confinement of V Os within only few subsurface layers of the film, while their concentration remains extremely low on the topmost surface and in the bulk of STO substrate. In conclusion, we show that such a quasi-two-dimensional (2D) V O-doped layer, mimicking the δ-doping case in conventional semiconductors, can be precisely controlled.« less

Crystallinity of tellurium capping and epitaxy of ferromagnetic topological insulator films on SrTiO 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Jihwey; Soh, Yeong-Ah; Aeppli, Gabriel

2015-06-30

Thin films of topological insulators are often capped with an insulating layer since topological insulators are known to be fragile to degradation. However, capping can hinder the observation of novel transport properties of the surface states. To understand the influence of capping on the surface states, it is crucial to understand the crystal structure and the atomic arrangement at the interfaces. Here, we use x-ray diffraction to establish the crystal structure of magnetic topological insulator Cr-doped (Bi,Sb) 2Te 3 (CBST) films grown on SrTiO 3 (1 1 1) substrates with and without a Te capping layer. We find that bothmore » the film and capping layer are single crystal and that the crystal quality of the film is independent of the presence of the capping layer, but that x-rays cause sublimation of the CBST film, which is prevented by the capping layer. Our findings show that the different transport properties of capped films cannot be attributed to a lower crystal quality but to a more subtle effect such as a different electronic structure at the interface with the capping layer. Our results on the crystal structure and atomic arrangements of the topological heterostructure will enable modelling the electronic structure and design of topological heterostructures.« less

Transparent EuTiO3 films: a possible two-dimensional magneto-optical device

NASA Astrophysics Data System (ADS)

Bussmann-Holder, Annette; Roleder, Krystian; Stuhlhofer, Benjamin; Logvenov, Gennady; Lazar, Iwona; Soszyński, Andrzej; Koperski, Janusz; Simon, Arndt; Köhler, Jürgen

2017-01-01

The magneto-optical activity of high quality transparent thin films of insulating EuTiO3 (ETO) deposited on a thin SrTiO3 (STO) substrate, both being non-magnetic materials, are demonstrated to be a versatile tool for light modulation. The operating temperature is close to room temperature and allows for multiple device engineering. By using small magnetic fields birefringence of the samples can be switched off and on. Similarly, rotation of the sample in the field can modify its birefringence Δn. In addition, Δn can be increased by a factor of 4 in very modest fields with simultaneously enhancing the operating temperature by almost 100 K.

Ultrafast X-ray diffraction probe of terahertz field-driven soft mode dynamics in SrTiO 3

DOE PAGES

Kozina, M.; van Driel, T.; Chollet, M.; ...

2017-05-03

We use ultrafast x-ray pulses to characterize the lattice response of SrTiO 3 when driven by strong terahertz (THz) fields. We observe transient changes in the diffraction intensity with a delayed onset with respect to the driving field. Fourier analysis reveals two frequency components corresponding to the two lowest energy zone-center optical modes in SrTiO 3. Lastly, the lower frequency mode exhibits clear softening as the temperature is decreased while the higher frequency mode shows slight temperature dependence.

Ultrafast X-ray diffraction probe of terahertz field-driven soft mode dynamics in SrTiO 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozina, M.; van Driel, T.; Chollet, M.

We use ultrafast x-ray pulses to characterize the lattice response of SrTiO 3 when driven by strong terahertz (THz) fields. We observe transient changes in the diffraction intensity with a delayed onset with respect to the driving field. Fourier analysis reveals two frequency components corresponding to the two lowest energy zone-center optical modes in SrTiO 3. Lastly, the lower frequency mode exhibits clear softening as the temperature is decreased while the higher frequency mode shows slight temperature dependence.

Engineering two-dimensional superconductivity and Rashba spin–orbit coupling in LaAlO 3/SrTiO 3 quantum wells by selective orbital occupancy

DOE PAGES

Herranz, Gervasi; Singh, Gyanendra; Bergeal, Nicolas; ...

2015-01-13

We find the discovery of two-dimensional electron gases (2DEGs) at oxide interfaces—involving electrons in narrow d-bands—has broken new ground, enabling the access to correlated states that are unreachable in conventional semiconductors based on s- and p- electrons. There is a growing consensus that emerging properties at these novel quantum wells—such as 2D superconductivity and magnetism—are intimately connected to specific orbital symmetries in the 2DEG sub-band structure. Here we show that crystal orientation allows selective orbital occupancy, disclosing unprecedented ways to tailor the 2DEG properties. By carrying out electrostatic gating experiments in ​LaAlO 3/​SrTiO 3 wells of different crystal orientations, wemore » show that the spatial extension and anisotropy of the 2D superconductivity and the Rashba spin–orbit field can be largely modulated by controlling the 2DEG sub-band filling. Such an orientational tuning expands the possibilities for electronic engineering of 2DEGs at ​LaAlO 3/​SrTiO 3 interfaces.« less

Fabrication of Schottky Junction Between Au and SrTiO3

NASA Astrophysics Data System (ADS)

Inoue, Akira; Izumisawa, Kei; Uwe, Hiromoto

2001-05-01

A Schottky junction with a high rectification ratio between Au and La-doped SrTiO3 has been fabricated using a simple surface treatment. Highly La-doped (5%) SrTiO3 single crystals are annealed in O2 atmosphere at about 1000°C for 1 h and etched in HNO3 for more than five min. The HNO3 etching is performed in a globe box containing N2 to prevent pollution from the air. After the treatment, Au is deposited on the SrTiO3 surface in a vacuum (˜ 10-7 Torr) with an e-gun evaporator. The current voltage characteristics of the junction have shown excellent rectification properties, although junctions using neither annealed nor etched SrTiO3 exhibit high leak current in reverse voltage. The rectification ratio of the junction at 1 V is more than six orders of magnitude and there is no hysteresis in the current voltage spectra. The logarithm of the current is linear with the forward bias voltage. The ideal factor of the junction is estimated to be about 1.68. These results suggest that, if prevented from being pollution by the air, a good Schottky junction can be obtained by easy processes such as annealing in oxygen atmosphere and surface etching with acid.

Regulation of depletion layer width in Pb(Zr,Ti)O3/Nb:SrTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Bai, Yu; Jie Wang, Zhan; Cui, Jian Zhong; Zhang, Zhi Dong

2018-05-01

Improving the tunability of depletion layer width (DLW) in ferroelectric/semiconductor heterostructures is important for the performance of some devices. In this work, 200-nm-thick Pb(Zr0.4Ti0.6)O3 (PZT) films were deposited on different Nb-doped SrTiO3 (NSTO) substrates, and the tunability of DLW at PZT/NSTO interfaces were studied. Our results showed that the maximum tunability of the DLW was achieved at the NSTO substrate with 0.5 wt% Nb. On the basis of the modified capacitance model and the ferroelectric semiconductor theory, we suggest that the tunability of the DLW in PZT/NSTO heterostructures can be attributed to a delicate balance of the depletion layer charge and the ferroelectric polarization charge. Therefore, the performance of some devices related to the tunability of DLW in ferroelectric/semiconductor heterostructures can be improved by modulating the doping concentration in semiconducting electrode materials.

Strain Coupling of Conversion-type Fe 3O 4 Thin Films for Lithium Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hwang, Sooyeon; Meng, Qingping; Chen, Ping-Fan

2017-05-29

Lithiation/delithiation induces significant stresses and strains into the electrodes for lithium ion batteries, which can severely degrade their cycling performance. Moreover, this electrochemically induced strain can interact with the local strain existing at solid–solid interfaces. It is not clear how this interaction affects the lithiation mechanism. The effect of this coupling on the lithiation kinetics in epitaxial Fe 3O 4 thin film on a Nb-doped SrTiO 3 substrate is investigated. In-situ and ex-situ transmission electron microscopy (TEM) results show that the lithiation is suppressed by the compressive interfacial strain. At the interface between the film and substrate, the existence ofmore » Li xFe 3O 4 rock-salt phase during lithiation consequently restrains the film from delamination. 2D phase-field simulation verifies the effect of strain. This work provides critical insights of understanding the solid–solid interfaces of conversion-type electrodes.« less

Amorphization due to electronic energy deposition in defective strontium titanate

DOE PAGES

Xue, Haizhou; Zarkadoula, Eva; Liu, Peng; ...

2017-01-27

The synergistic interaction of electronic energy loss by ions with ion-induced defects created by elastic nuclear scattering processes has been investigated for single crystal SrTiO 3. An initial pre-damaged defect state corresponding to a relative disorder level of 0.10–0.15 sensitizes the SrTiO 3 to amorphous track formation along the ion path of 12 and 20 MeV Ti, 21 MeV Cl and 21 MeV Ni ions, where Ti, Cl and Ni ions otherwise do not produce amorphous or damage tracks in pristine SrTiO 3. The electronic stopping power threshold for amorphous ion track formation is found to be 6.7 keV/nm formore » the pre-damaged defect state studied in this work. Lastly, these results suggest the possibility of selectively producing nanometer scale, amorphous ion tracks in thin films of epitaxial SrTiO 3.« less

Novel organic semiconductors and a high capacitance gate dielectric for organic thin film transistors

NASA Astrophysics Data System (ADS)

Cai, Xiuyu

2007-12-01

Organic semiconductors are attracting more and more interest as a promising set of materials in the field of electronics research. This thesis focused on several new organic semiconductors and a novel high-kappa dielectric thin film (SrTiO3), which are two essential parts in Organic Thin Film Transistors (OTFTs). Structure and morphology of thin films of tricyanovinyl capped oligothiophenes were studied using atomic force microscopy and x-ray diffraction. Thin film transistors of one compound exhibited a reasonable electron mobility of 0.02 cm2/Vs. Temperature dependent measurements on the thin film transistor based on this compound revealed shallow trap states that were interpreted in terms of a multiple trap and release model. Moreover, inversion of the majority charge carrier type from electrons to holes was observed when the number of oligothiophene rings increased to six and ambipolar transport behavior was observed for tricyanovinyl sexithiophene. Another interesting organic semiconductor compound is the fluoalkylquarterthiophene, which showed ambipolar transport and large hysteresis in the transfer curve. Due to the bistable state at floating gate, the thin film transistor was exploited to study non-volatile floating gate memory effects. The temperature dependence of the retention time for this memory device revealed that the electron trapping was an activated process. Following the earlier work on hybrid acene-thiophene organic semiconductors, new compounds with similar structure were studied to reveal the mechanism of the air-stability exhibited by some compounds. They all formed highly crystalline thin films and showed reasonable device performances which are well correlated with the molecular structures, thin film microstructures, and solid state packing. The most air-stable compound had no observable degradation with exposure to air for 15 months. SrTiO3 was developed to be employed in OTFTs. Optimization of thin film growth was performed using reactive sputtering growth. Excellent SrTiO3 epitaixal thin film growth was revealed on conductive SrTiO 3:Nb substrates. A maximum charge carrier density of 1014 cm-2 was obtained based on pentacene and perylene diimide thin film transistors. Some new physical phenomena, such as step-like transfer characteristic curve and negative transconductance, were observed at such high field effect induced charge carrier density.

Metal-Insulator Transition of strained SmNiO3 Thin Films: Structural, Electrical and Optical Properties

PubMed Central

Torriss, B.; Margot, J.; Chaker, M.

2017-01-01

Samarium nickelate (SmNiO3) thin films were successfully synthesized on LaAlO3 and SrTiO3 substrates using pulsed-laser deposition. The Mott metal-insulator (MI) transition of the thin films is sensitive to epitaxial strain and strain relaxation. Once the strain changes from compressive to tensile, the transition temperature of the SmNiO3 samples shifts to slightly higher values. The optical conductivity reveals the strong dependence of the Drude spectral weight on the strain relaxation. Actually, compressive strain broadens the bandwidth. In contrast, tensile strain causes the effective number of free carriers to reduce which is consistent with the d-band narrowing. PMID:28098240

Influence of crystal phases on electro-optic properties of epitaxially grown lanthanum-modified lead zirconate titanate films

NASA Astrophysics Data System (ADS)

Masuda, Shin; Seki, Atsushi; Masuda, Yoichiro

2010-02-01

We describe here how we have improved the crystal qualities and controlled the crystal phase of the lanthanum-modified lead zirconate titanate (PLZT) film without changing the composition ratio using an oxygen-pressure crystallization process. A PLZT film deposited on a SrTiO3 substrate with the largest electro-optic (EO) coefficient of 498 pm/V has been achieved by controlling the crystal phase of the film. Additionally, a fatigue-free lead zirconate titanate (PZT) capacitor with platinum electrodes has been realized by reducing the oxygen vacancies in the films.

Colossal positive magnetoresistance in surface-passivated oxygen-deficient strontium titanite.

PubMed

David, Adrian; Tian, Yufeng; Yang, Ping; Gao, Xingyu; Lin, Weinan; Shah, Amish B; Zuo, Jian-Min; Prellier, Wilfrid; Wu, Tom

2015-05-15

Modulation of resistance by an external magnetic field, i.e. magnetoresistance effect, has been a long-lived theme of research due to both fundamental science and device applications. Here we report colossal positive magnetoresistance (CPMR) (>30,000% at a temperature of 2 K and a magnetic field of 9 T) discovered in degenerate semiconducting strontium titanite (SrTiO3) single crystals capped with ultrathin SrTiO3/LaAlO3 bilayers. The low-pressure high-temperature homoepitaxial growth of several unit cells of SrTiO3 introduces oxygen vacancies and high-mobility carriers in the bulk SrTiO3, and the three-unit-cell LaAlO3 capping layer passivates the surface and improves carrier mobility by suppressing surface-defect-related scattering. The coexistence of multiple types of carriers and inhomogeneous transport lead to the emergence of CPMR. This unit-cell-level surface engineering approach is promising to be generalized to others oxides, and to realize devices with high-mobility carriers and interesting magnetoelectronic properties.

Transport Properties of La- doped SrTiO3 Ceramics Prepared Using Spark Plasma Sintering

NASA Astrophysics Data System (ADS)

Mehdizadeh Dehkordi, Arash; Bhattacharya, Sriparna; Tritt, Terry M.; Alshareef, Husam N.

2012-02-01

In this work, thermoelectric transport properties of La-doped SrTiO3 ceramics prepared using conventional solid state reaction and spark plasma sintering have been investigated. Room temperature power factor of single crystal strontium titanate (SrTiO3), comparable to that of Bi2Te3, has brought new attention to this perovskite-type transition metal-oxide as a potential n-type thermoelectric for high temperature applications. Electronic properties of this model complex oxide, SrTiO3 (ABO3), can be tuned in a wide range through different doping mechanisms. In addition to A site (La-doped) or B site (Nb-doped) substitutional doping, introducing oxygen vacancies plays an important role in electrical and thermal properties of these structures. Having multiple doping mechanisms makes the transport properties of these perovskites more dependent on preparation parameters. The effect of these synthesis parameters and consolidation conditions on the transport properties of these materials has been studied.

Influence of rare earth doping on thermoelectric properties of SrTiO3 ceramics

NASA Astrophysics Data System (ADS)

Liu, J.; Wang, C. L.; Li, Y.; Su, W. B.; Zhu, Y. H.; Li, J. C.; Mei, L. M.

2013-12-01

Thermoelectric properties of SrTiO3 ceramics, doped with different rare earth elements, were investigated in this work. It's found that the ionic radius of doping elements plays an important role on thermoelectric properties: SrTiO3 ceramics doped with large rare earth ions (such as La, Nd, and Sm) exhibit large power factors, and those doped with small ions (such as Gd, Dy, Er, and Y) exhibit low thermal conductivities. Therefore, a simple approach for enhancing the thermoelectric performance of SrTiO3 ceramics is proposed: mainly doped with large ions to obtain a large power factor and, simultaneously, slightly co-doped with small ions to obtain a low thermal conductivity. Based on this rule, Sr0.8La0.18Yb0.02TiO3 ceramics were prepared, whose ZT value at 1 023 K reaches 0.31, increasing by a factor of 19% compared with the single-doped counterpart Sr0.8La0.2TiO3 (ZT = 0.26).

Intermediate surface structure between step bunching and step flow in SrRuO3 thin film growth

NASA Astrophysics Data System (ADS)

Bertino, Giulia; Gura, Anna; Dawber, Matthew

We performed a systematic study of SrRuO3 thin films grown on TiO2 terminated SrTiO3 substrates using off-axis magnetron sputtering. We investigated the step bunching formation and the evolution of the SRO film morphology by varying the step size of the substrate, the growth temperature and the film thickness. The thin films were characterized using Atomic Force Microscopy and X-Ray Diffraction. We identified single and multiple step bunching and step flow growth regimes as a function of the growth parameters. Also, we clearly observe a stronger influence of the step size of the substrate on the evolution of the SRO film surface with respect to the other growth parameters. Remarkably, we observe the formation of a smooth, regular and uniform ``fish skin'' structure at the transition between one regime and another. We believe that the fish skin structure results from the merging of 2D flat islands predicted by previous models. The direct observation of this transition structure allows us to better understand how and when step bunching develops in the growth of SrRuO3 thin films.

Integration of (208) oriented epitaxial Hf-doped Bi4Ti3O12 with (0002) GaN using SrTiO3/TiO2 buffer layer

NASA Astrophysics Data System (ADS)

Luo, W. B.; Zhu, J.; Li, Y. R.; Wang, X. P.; Zhang, Y.

2009-05-01

Hf-doped Bi4Ti3O12 (BTH) ferroelectric films with excellent electrical properties were epitaxially integrated with GaN semiconductor using (111) SrTiO3 (STO)/rutile (200) TiO2 as buffer layer. The STO/TiO2 buffer layer was deposited by laser molecular beam epitaxy. The structural characteristics of the buffer layer were in situ and ex situ characterized by reflective high energy electron diffraction, x-ray diffraction (XRD), and high resolution transmission microscopy. The overlaying SrRuO3 (SRO) and BTH films were then deposited by pulsed laser deposition. XRD spectra, including θ-2θ and Φ scans, show that the (208) BTH films were epitaxially grown on GaN, and the BTH films inherit the in-plane twin-domain of STO buffer layer. Electrical measurements demonstrate that the non-c axis BTH films possess a large remnant polarization (2Pr=45 μC/cm2), excellent fatigue endurance (10.2% degradation after 1.1×1010 switching cycles), and a low leakage current density (1.94×10-7 A/cm2 at an electric field of 200 kV/cm). These results reveal that the (208) BTH films with favorable electrical performance could be epitaxially grown on GaN template using STO/TiO2 buffer layer.

Novel Magnetic Phenomena in Oxide Thin Films, Interfaces and Heterostructures

NASA Astrophysics Data System (ADS)

Venkatesan, Thirumalai

2015-03-01

Oxide films, heterostructures and interfaces present wonderful opportunities for exploring novel magnetic phenomena. The idea of cationic vacancy induced ferromagnetism was demonstrated by observing ferromagnetism in TaxTi1-xO2(x = 2 - 6%). Using XAS, XPS and XMCD, the magnetism was mainly located at the Ti sites and was shown to arise from Ti vacancies as opposed to Ti3+. The substrate-film interface was crucial for observing the ferromagnetism, as the required concentration of Ti vacancies could only be maintained close to the interface. With electron transport we were able to see with increasing thickness the emerging role of Kondo scattering (mediated by Ti3+) and at larger thickness impurity scattering. The polar LaAlO3/non-polar SrTiO3 interface exhibits a mixture of magnetic phases most likely arising from cationic defects and selective electron occupancy in Ti t2g levels. Using XMCD ferromagnetism was seen at these interfaces even at room temperature. Unlike LaAlO3, polar LaMnO3 is an insulator exhibiting orbital order that has a smaller band gap than SrTiO3. It is a traditional antiferromagnetic material, but when grown on SrTiO3, LaMnO3 exhibits ferromagnetism for film thicknesses exceeding 5 unit cells. This is discussed in terms of electronic reconstruction with polar charge transfer to the LaMnO3 side of the interface and also to the surface of the over layer. Novel magnetic coupling effects are seen in perovskite ferromagnets separated by a polar oxide layer such as LaAlO3 or NdGaO3, whereas non-polar oxides do not show the same effect. The coupling between the ferromagnetic layers oscillates in sign between FM and AFM, depending on the barrier thickness. Such coupling is totally unexpected in the absence of any itinerary electrons, with insulating barriers that are too thick for tunneling. The novel magnetic coupling is shown to be mediated by spin-orbit coupling and also magnetic excitation of defect levels in the polar oxide planes.

Quasi 2D Ultrahigh Carrier Density in a Complex Oxide Broken Gap Heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Peng; Droubay, Timothy C.; Jeong, Jong S.

2016-01-21

Two-dimensional (2D) ultra-high carrier densities at complex oxide interfaces are of considerable current research interest for novel plasmonic and high charge-gain devices. However, the highest 2D electron density obtained in oxide heterostructures is thus far limited to 3×1014 cm-2 (½ electron/unit cell/interface) at GdTiO3/SrTiO3 interfaces, and is typically an order of magnitude lower at LaAlO3/SrTiO3 interfaces. Here we show that carrier densities much higher than 3×1014 cm-2 can be achieved via band engineering. Transport measurements for 3 nm SrTiO3/t u.c. NdTiO3/3 nm SrTiO3/LSAT (001) show that charge transfer significantly in excess of the value expected from the polar discontinuity modelmore » occurs for higher t values. The carrier density remains unchanged, and equivalent to ½ electron/unit cell/interface for t < 6 unit cells. However, above a critical NdTiO3 thickness of 6 u.c., electrons from the valence band of NdTiO3 spill over into the SrTiO3 conduction band as a natural consequence of the band alignment. An atomistic model consistent with first-principle calculations and experimental results is proposed for the charge transfer mechanisms. These results may provide an exceptional route to the realization of the room-temperature oxide electronics.« less

Growth and interface engineering in thin-film Ba0.6Sr0.4TiO3 /SrMoO3 heterostructures

NASA Astrophysics Data System (ADS)

Radetinac, Aldin; Ziegler, Jürgen; Vafaee, Mehran; Alff, Lambert; Komissinskiy, Philipp

2017-04-01

Epitaxial heterostructures of ferroelectric Ba0.6Sr0.4TiO3 and highly conducting SrMoO3 were grown by pulsed laser deposition on SrTiO3 (0 0 1) substrates. Surface oxidation of the SrMoO3 film is suppressed using a thin cap interlayer of Ba0.6Sr0.4TiO3-δ grown in reduced atmosphere. As shown by X-ray photoelectron spectroscopy, the Mo4+ valence state of the SrMoO3 films is stable upon annealing of the sample in oxygen up to 600 °C. The described oxygen interface engineering enables utilization of the highly conducting material SrMoO3 in multilayer oxide ferroelectric varactors.

Fluorescence X-ray absorption spectroscopy using a Ge pixel array detector: application to high-temperature superconducting thin-film single crystals.

PubMed

Oyanagi, H; Tsukada, A; Naito, M; Saini, N L; Lampert, M O; Gutknecht, D; Dressler, P; Ogawa, S; Kasai, K; Mohamed, S; Fukano, A

2006-07-01

A Ge pixel array detector with 100 segments was applied to fluorescence X-ray absorption spectroscopy, probing the local structure of high-temperature superconducting thin-film single crystals (100 nm in thickness). Independent monitoring of pixel signals allows real-time inspection of artifacts owing to substrate diffractions. By optimizing the grazing-incidence angle theta and adjusting the azimuthal angle phi, smooth extended X-ray absorption fine structure (EXAFS) oscillations were obtained for strained (La,Sr)2CuO4 thin-film single crystals grown by molecular beam epitaxy. The results of EXAFS data analysis show that the local structure (CuO6 octahedron) in (La,Sr)2CuO4 thin films grown on LaSrAlO4 and SrTiO3 substrates is uniaxially distorted changing the tetragonality by approximately 5 x 10(-3) in accordance with the crystallographic lattice mismatch. It is demonstrated that the local structure of thin-film single crystals can be probed with high accuracy at low temperature without interference from substrates.

Microscopic evidence of a strain-enhanced ferromagnetic state in LaCoO3 thin films

NASA Astrophysics Data System (ADS)

Park, S.; Ryan, P.; Karapetrova, E.; Kim, J. W.; Ma, J. X.; Shi, J.; Freeland, J. W.; Wu, Weida

2009-08-01

Strain-induced modification of magnetic properties of lightly hole doped epitaxial LaCoO3 thin films on different substrates were studied with variable temperature magnetic force microscopy (MFM). Real space observation at 10 K reveals the formation of the local magnetic clusters on a relaxed film grown on LaAlO3 (001). In contrast, a ferromagnetic ground state has been confirmed for tensile-strained film on SrTiO3 (001), indicating that strain is an important factor in creating the ferromagnetic state. Simultaneous atomic force microscopy and MFM measurements reveal nanoscale defect lines for the tensile-strained films, where the structural defects have a large impact on the local magnetic properties.

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

PubMed Central

Mehdizadeh Dehkordi, Arash; Bhattacharya, Sriparna; Darroudi, Taghi; Zeng, Xiaoyu; Alshareef, Husam N.; Tritt, Terry M.

2015-01-01

We demonstrate a novel synthesis strategy for the preparation of Pr-doped SrTiO3 ceramics via a combination of solid state reaction and spark plasma sintering techniques. Polycrystalline ceramics possessing a unique morphology can be achieved by optimizing the process parameters, particularly spark plasma sintering heating rate. The phase and morphology of the synthesized ceramics were investigated in detail using X-ray diffraction, scanning electron microcopy and energy-dispersive X-ray spectroscopy. It was observed that the grains of these bulk Pr-doped SrTiO3 ceramics were enhanced with Pr-rich grain boundaries. Electronic and thermal transport properties were also investigated as a function of temperature and doping concentration. Such a microstructure was found to give rise to improved thermoelectric properties. Specifically, it resulted in a significant improvement in carrier mobility and the thermoelectric power factor. Simultaneously, it also led to a marked reduction in the thermal conductivity. As a result, a significant improvement (> 30%) in the thermoelectric figure of merit was achieved for the whole temperature range over all previously reported maximum values for SrTiO3-based ceramics. This synthesis demonstrates the steps for the preparation of bulk polycrystalline ceramics of non-uniformly Pr-doped SrTiO3. PMID:26327483

Electron Correlation in Oxygen Vacancy in SrTiO3

NASA Astrophysics Data System (ADS)

Lin, Chungwei; Demkov, Alexander A.

2014-03-01

Oxygen vacancies are an important type of defect in transition metal oxides. In SrTiO3 they are believed to be the main donors in an otherwise intrinsic crystal. At the same time, a relatively deep gap state associated with the vacancy is widely reported. To explain this inconsistency we investigate the effect of electron correlation in an oxygen vacancy (OV) in SrTiO3. When taking correlation into account, we find that the OV-induced localized level can at most trap one electron, while the second electron occupies the conduction band. Our results offer a natural explanation of how the OV in SrTiO3 can produce a deep in-gap level (about 1 eV below the conduction band bottom) in photoemission, and at the same time be an electron donor. Our analysis implies an OV in SrTiO3 should be fundamentally regarded as a magnetic impurity, whose deep level is always partially occupied due to the strong Coulomb repulsion. An OV-based Anderson impurity model is derived, and its implications are discussed. This work was supported by Scientific Discovery through Advanced Computing (SciDAC) program funded by U.S. Department of Energy, Office of Science, Advanced Scientific Computing Research and Basic Energy Sciences under award number DESC0008877.

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties.

PubMed

Mehdizadeh Dehkordi, Arash; Bhattacharya, Sriparna; Darroudi, Taghi; Zeng, Xiaoyu; Alshareef, Husam N; Tritt, Terry M

2015-08-15

We demonstrate a novel synthesis strategy for the preparation of Pr-doped SrTiO3 ceramics via a combination of solid state reaction and spark plasma sintering techniques. Polycrystalline ceramics possessing a unique morphology can be achieved by optimizing the process parameters, particularly spark plasma sintering heating rate. The phase and morphology of the synthesized ceramics were investigated in detail using X-ray diffraction, scanning electron microcopy and energy-dispersive X-ray spectroscopy. It was observed that the grains of these bulk Pr-doped SrTiO3 ceramics were enhanced with Pr-rich grain boundaries. Electronic and thermal transport properties were also investigated as a function of temperature and doping concentration. Such a microstructure was found to give rise to improved thermoelectric properties. Specifically, it resulted in a significant improvement in carrier mobility and the thermoelectric power factor. Simultaneously, it also led to a marked reduction in the thermal conductivity. As a result, a significant improvement (> 30%) in the thermoelectric figure of merit was achieved for the whole temperature range over all previously reported maximum values for SrTiO3-based ceramics. This synthesis demonstrates the steps for the preparation of bulk polycrystalline ceramics of non-uniformly Pr-doped SrTiO3.

Thermoelectric Properties of Complex Oxide Heterostructures

NASA Astrophysics Data System (ADS)

Cain, Tyler Andrew

Thermoelectrics are a promising energy conversion technology for power generation and cooling systems. The thermal and electrical properties of the materials at the heart of thermoelectric devices dictate conversion efficiency and technological viability. Studying the fundamental properties of potentially new thermoelectric materials is of great importance for improving device performance and understanding the electronic structure of materials systems. In this dissertation, investigations on the thermoelectric properties of a prototypical complex oxide, SrTiO3, are discussed. Hybrid molecular beam epitaxy (MBE) is used to synthesize La-doped SrTiO3 thin films, which exhibit high electron mobilities and large Seebeck coefficients resulting in large thermoelectric power factors at low temperatures. Large interfacial electron densities have been observed in SrTiO3/RTiO 3 (R=Gd,Sm) heterostructures. The thermoelectric properties of such heterostructures are investigated, including the use of a modulation doping approach to control interfacial electron densities. Low-temperature Seebeck coefficients of extreme electron-density SrTiO3 quantum wells are shown to provide insight into their electronic structure.

Generation and characterization of point defects in SrTiO3 and Y3Al5O12

NASA Astrophysics Data System (ADS)

Selim, F. A.; Winarski, D.; Varney, C. R.; Tarun, M. C.; Ji, Jianfeng; McCluskey, M. D.

Positron annihilation lifetime spectroscopy (PALS) was applied to characterize point defects in single crystals of Y3Al5O12 and SrTiO3 after populating different types of defects by relevant thermal treatments. In SrTiO3, PALS measurements identified Sr vacancy, Ti vacancy, vacancy complexes of Ti-O (vacancy) and hydrogen complex defects. In Y3Al5O12 single crystals the measurements showed the presence of Al-vacancy, (Al-O) vacancy and Al-vacancy passivated by hydrogen. These defects are shown to play the major role in defining the electronic and optical properties of these complex oxides.

Spectral scalability and optical spectra of fractal multilayer structures: FDTD analysis

NASA Astrophysics Data System (ADS)

Simsek, Sevket; Palaz, Selami; Mamedov, Amirullah M.; Ozbay, Ekmel

2017-01-01

An investigation of the optical properties and band structures for the conventional and Fibonacci photonic crystals (PCs) based on SrTiO3 and Sb2Te3 is made in the present research. Here, we use one-dimensional SrTiO3- and Sb2Te3-based layers. We have theoretically calculated the photonic band structure and transmission spectra of SrTiO3- and Sb2Te3-based PC superlattices. The position of minima in the transmission spectrum correlates with the gaps obtained in the calculation. The intensity of the transmission depths is more intense in the case of higher refractive index contrast between the layers.

I-V Characteristics vs. Spatial Dissipation Maps in YBCO Grain Boundary on Bicrystal Substrates

NASA Astrophysics Data System (ADS)

Kwon, Chuhee; Yamamoto, Megumi; Pottish, Samuel; Haugan, Timothy; Barnes, Paul

2008-03-01

Grain boundary (GB) properties of YBCO films on SrTiO3 bicrystal substrates with 24 degree misorientations are examined by transport and scanning laser microscopy (SLM) techniques. Thermoelectric SLM clearly shows the location of grain boundaries, and variable temperature SLM confirms that GB has lower Tc. A series of I-V measured in superconducting states exhibit clear step-like features identified in earlier papers as sub-gap structures. The low temperature SLM shows a close relation between the step-like features and the local dissipation pattern in GB. We believe that the activation of Fiske steps is responsible for the step-like I-V, and SLM images show the spatial pattern of the self-excited resonance in GB. We will also discuss how Ca-doping and nanoparticle additions on YBCO affect the junction properties.

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

PubMed Central

Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

2015-01-01

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials. PMID:26202946

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.

PubMed

Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

2015-07-23

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

Hysteretic Characteristics of Pulsed Laser Deposited 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3/ZnO Bilayers.

PubMed

Silva, J P B; Wang, J; Koster, G; Rijnders, G; Negrea, R F; Ghica, C; Sekhar, K C; Moreira, J Agostinho; Gomes, M J M

2018-05-02

In the present work, we study the hysteretic behavior in the electric-field-dependent capacitance and the current characteristics of 0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 (BCZT)/ZnO bilayers deposited on 0.7 wt % Nb-doped (001)-SrTiO 3 (Nb:STO) substrates in a metal-ferroelectric-semiconductor (MFS) configuration. The X-ray diffraction measurements show that the BCZT and ZnO layers are highly oriented along the c-axis and have a single perovskite and wurtzite phases, respectively, whereas high-resolution transmission electron microscopy revealed very sharp Nb:STO/BCZT/ZnO interfaces. The capacitance-electric field ( C- E) characteristics of the bilayers exhibit a memory window of 47 kV/cm and a capacitance decrease of 22%, at a negative bias. The later result is explained by the formation of a depletion region in the ZnO layer. Moreover, an unusual resistive switching (RS) behavior is observed in the BCZT films, where the RS ratio can be 500 times enhanced in the BCZT/ZnO bilayers. The RS enhancement can be understood by the barrier potential profile modulation at the depletion region, in the BCZT/ZnO junction, via ferroelectric polarization switching of the BCZT layer. This work builds a bridge between the hysteretic behavior observed either in the C- E and current-electric field characteristics on a MFS structure.

Sintering of BaCe(sub 0.85)Y(sub 0.15)O(sub 3-delta) with/without SrTiO3 Dopant

NASA Technical Reports Server (NTRS)

Dynys, F.; Sayir, A.; Heimann, P. J.

2004-01-01

The perovskite composition, BaCe(sub 0.85)Y(sub 0.15)O(sub 3-delta), displays excellent protonic conduction at high temperatures making it a desirable candidate for hydrogen separation membranes. This paper reports on the sintering behavior of BaCe(sub 0.85)Y(sub 0.15)O(sub 3-delta) powders doped with SrTiO3. Two methods were used to synthesize BaCe(sub 0.85)Y(sub 0.15)O(sub 3-delta) powders: (1) solid state reaction and (2) wet chemical co-precipitation. Co-precipitated powder crystallized into the perovskite phase at 1000 C for 4 hrs. Complete reaction and crystallization of the perovskite phase by solid state was achieved by calcining at 1200 C for 24 hrs. Solid state synthesis produced a coarser powder with an average particle size of 1.3 microns and surface area of 0.74 sq m/g. Co-precipitation produced a finer powder with a average particle size of 65 nm and surface area of 14.9 sq m/g. Powders were doped with 1, 2, 5, and 10 mole % SrTiO3. Samples were sintered at 1450 C, 1550 C and 1650 C. SrTiO3 enhances sintering, optimal dopant level is different for powders synthesized by solid state and co-precipitation. Both powders exhibit similar grain growth behavior. Dopant levels of 5 and 10 mole % SrTiO3 significantly enhances the grain size.

Piezoelectricity and rotostriction through polar and non-polar coupled instabilities in bismuth-based piezoceramics

PubMed Central

Acosta, Matias; Schmitt, Ljubomira A.; Cazorla, Claudio; Studer, Andrew; Zintler, Alexander; Glaum, Julia; Kleebe, Hans-Joachim; Donner, Wolfgang; Hoffman, Mark; Rödel, Jürgen; Hinterstein, Manuel

2016-01-01

Coupling of order parameters provides a means to tune functionality in advanced materials including multiferroics, superconductors, and ionic conductors. We demonstrate that the response of a frustrated ferroelectric state leads to coupling between order parameters under electric field depending on grain orientation. The strain of grains oriented along a specific crystallographic direction, 〈h00〉, is caused by converse piezoelectricity originating from a ferrodistortive tetragonal phase. For 〈hhh〉 oriented grains, the strain results from converse piezoelectricity and rotostriction, as indicated by an antiferrodistortive instability that promotes octahedral tilting in a rhombohedral phase. Both strain mechanisms combined lead to a colossal local strain of (2.4 ± 0.1) % and indicate coupling between oxygen octahedral tilting and polarization, here termed “rotopolarization”. These findings were confirmed with electromechanical experiments, in situ neutron diffraction, and in situ transmission electron microscopy in 0.75Bi1/2Na1/2TiO3-0.25SrTiO3. This work demonstrates that polar and non-polar instabilities can cooperate to provide colossal functional responses. PMID:27364037

Phase transition in lead titanate thin films: a Brillouin study

NASA Astrophysics Data System (ADS)

Kuzel, P.; Dugautier, C.; Moch, P.; LeMarrec, F.; Karkut, M. G.

2002-12-01

The elastic properties of both polycrystalline and epitaxial PbTiO3 (PTO) thin films are studied using Brillouin scattering spectroscopy. The epitaxial PTO films were prepared by pulsed laser ablation on (1) a [0 0 1] single crystal of SrTiO3 (STO) doped with Nb and (2) a [0 0 1] STO buffered with a layer of YBa2Cu3O7. The polycrystalline PTO films were prepared by sol-gel on a Si substrate buffered with TiO2 and Pt layers. The data analysis takes into account the ripple and the elasto-optic contributions. The latter significantly affects the measured spectra since it gives rise to a Love mode in the p-s scattering geometry. At room temperature, the spectra of the epitaxially grown samples are interpreted using previously published elastic constants of PTO single crystals. Sol-gel samples exhibit appreciable softening of the effective elastic properties compared to PTO single crystals: this result is explained by taking into account the random orientation of the microscopic PTO grains. For both the polycrystalline and the epitaxial films we have determined that the piezoelectric terms do not contribute to the spectra. The temperature dependence of the spectra shows strong anomalies of the elastic properties near the ferroelectric phase transition. Compared to the bulk, TC is higher in the sol-gel films, while in the epitaxial films the sign of the TC shift depends on the underlying material.

Strain relaxation in the epitaxy of La2/3Sr1/3MnO3 grown by pulsed-laser deposition on SrTiO3(001)

NASA Astrophysics Data System (ADS)

Maurice, J.-L.; Pailloux, F.; Barthélémy, A.; Durand, O.; Imhoff, D.; Lyonnet, R.; Rocher, A.; Contour, J.-P.

2003-10-01

With a Curie point at 370 K, the half-metal (La0.7Sr0.3)MnO3 (LSMO) is one of the most interesting candidates for electronic devices based on tunnel magnetoresistance. SrTiO3 (STO) is up to now the best substrate for the epitaxy of suitable thin films of LSMO. The pseudocubic unit cell of rhombohedral LSMO has a parameter aLSMO such that (aSTO m aLSMO)/aLSMO = + 0.83% (where aSTO is the parameter of cubic STO) and an angle of 90.26°. As strained growth is tetragonal, relaxation implies recovery of both the pseudocubic parameter and of the original angle. In the LSMO layers that we prepare by pulsed-laser deposition, we show that these two processes are quite independent. The angular distortion is partially recovered by twinning in films 25 nm thick, while recovery of the parameter never occurs in the thickness range that we explored (up to 432 nm). A relaxation, however, takes place above a thickness of 100 nm, associated with a transition from two-dimensional to three-dimensional columnar growth. It is accompanied by chemical fluctuations. Our magnetic measurements exhibit Curie temperatures and magnetic moments very close to the bulk values in those layers where the crystal parameter is strained but the angle partially relaxed.