Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Ma, Xu; Liu, Xinkun; Li, Haizhu; Zhang, Angran; Huang, Mingju

2017-03-01

High-quality vanadium oxide ( VO2) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO2 has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO2 thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm.

Study of the resonant frequencies of silicon microcantilevers coated with vanadium dioxide films during the insulator-to-metal transition

NASA Astrophysics Data System (ADS)

Rúa, Armando; Fernández, Félix E.; Hines, Melissa A.; Sepúlveda, Nelson

2010-03-01

Vanadium dioxide (VO2) thin films were grown on silicon microcantilevers and companion test substrates by pulsed laser deposition followed by in situ annealing in an oxidizing atmosphere, with annealing times used to control crystallite sizes. Annealing times of 18 min produced VO2 films with average crystallite sizes of ˜10 nm or less, while those annealed for 35 min had crystallites of average size ˜90 nm, comparable to sample thickness. X-ray diffraction and x-ray photoelectron spectroscopy studies of the samples showed that films with crystallite sizes ˜40 nm or greater consisted of substoichiometric VO2 in its monoclinic phase, with preferential orientation with (011) planes parallel to the sample surface, while finer structured samples had a substantially similar composition, but showed no clear evidence of preferential orientation and were probably partially amorphous. Forced vibration experiments were performed with the cantilevers as they were thermally cycled through the VO2 insulator-to-metal transition (IMT). Very large reversible changes in the resonant frequencies of up to 5% (3.6 kHz) as well as hysteretic behavior were observed, which depend strongly on film crystallite size. The average value of Young's modulus for VO2 films with crystallite sizes of ˜90 nm was estimated from the mechanical resonance data at room temperature to be ˜120 GPa, but the large tensile stresses which develop between film and substrate through the IMT impede a similar determination for the VO2 tetragonal phase, since the commonly used relationships for cantilever frequencies derived from elasticity theory are not applicable for strongly curved composite beams. The results presented show that VO2 thin films can be useful in novel microscale and nanoscale electromechanical resonators in which effective stiffness can be tuned thermally or optically. This response can provide additional functionality to VO2—based devices which take advantage of other property changes through the IMT.

Thermochromic VO2 on Zinnwaldite Mica by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Mathevula, L.; Ngom, B. D.; Kotsedi, L.; Sechogela, P.; Doyle, T. B.; Ghouti, M.; Maaza, M.

2014-09-01

VO2 thin films have been deposited by pulsed laser deposition on Zinnwaldite Mica substrates. The crystal structure, chemical composition, morphology were determined and the semiconductor/metal transition (SMT) properties of the deposited films were investigated. Without any post annealing, the films exhibit a textured nature with a VO2 (0 1 1) preferred crystallographic orientation and an elevated thermal variation of the electric resistance ratio RS/RM through the SMT at T ≈ 68 °C of the order of 104 and a narrow ∼7 °C hysteresis. In addition, the growth of the VO2 crystallites seem to be governed likely by a Volmer-Weber or Stranski-Krastanov mechanisms and certainly not a Frank-van Der Merwe process.

Research progress of VO2 thin film as laser protecting material

NASA Astrophysics Data System (ADS)

Liu, Zhiwei; Lu, Yuan; Hou, Dianxin

2018-03-01

With the development of laser technology, the battlefield threat of directional laser weapons is becoming more and more serious. The blinding and destruction caused by laser weapons on the photoelectric equipment is an important part of the current photo-electronic warfare. The research on the defense technology of directional laser weapons based on the phase transition characteristics of VO2 thin films is an important subject. The researches of VO2 thin films are summarized based on review these points: the preparation methods of VO2 thin films, phase transition mechanism, phase transition temperature regulating, interaction between VO2 thin films and laser, and the application prospect of vo2 thin film as laser protecting material. This paper has some guiding significance for further research on the VO2 thin films in the field of defense directional laser weapons.

Vanadium dioxide thin films prepared on silicon by low temperature MBE growth and ex-situ annealing

NASA Astrophysics Data System (ADS)

Homm, Pia; van Bilzen, Bart; Menghini, Mariela; Locquet, Jean-Pierre; Ivanova, Todora; Sanchez, Luis; Sanchis, Pablo

Vanadium dioxide (VO2) is a material that shows an insulator to metal transition (IMT) near room temperature. This property can be exploited for applications in field effect devices, electro-optical switches and nonlinear circuit components. We have prepared VO2 thin films on silicon wafers by combining a low temperature MBE growth with an ex-situ annealing at high temperature. We investigated the structural, electrical and optical characteristics of films with thicknesses ranging from 10 to 100 nm. We have also studied the influence of the substrate cleaning. The films grown with our method are polycrystalline with a preferred orientation in the (011) direction of the monoclinic phase. For the films produced on silicon with a native oxide, an IMT at around 75 °C is observed. The magnitude of the resistance change across the IMT decreases with thickness while the refractive index at room temperature corresponds with values reported in the literature for thin films. The successful growth of VO2 films on silicon with good electrical and optical properties is an important step towards the integration of VO2 in novel devices. The authors acknowledge financial support from the FWO project G052010N10 and EU-FP7 SITOGA project. PH acknowledges support from Becas Chile - CONICYT.

Structural analysis of LaVO3 thin films under epitaxial strain

NASA Astrophysics Data System (ADS)

Meley, H.; Karandeep, Oberson, L.; de Bruijckere, J.; Alexander, D. T. L.; Triscone, J.-M.; Ghosez, Ph.; Gariglio, S.

2018-04-01

Rare earth vanadate perovskites exhibit a phase diagram in which two different types of structural distortions coexist: the strongest, the rotation of the oxygen octahedra, comes from the small tolerance factor of the perovskite cell (t = 0.88 for LaVO3) and the smaller one comes from inter-site d-orbital interactions manifesting as a cooperative Jahn-Teller effect. Epitaxial strain acts on octahedral rotations and crystal field symmetry to alter this complex lattice-orbit coupling. In this study, LaVO3 thin film structures have been investigated by X-ray diffraction and scanning transmission electron microscopy. The analysis shows two different orientations of octahedral tilt patterns, as well as two distinct temperature behaviors, for compressive and tensile film strain states. Ab initio calculations capture the strain effect on the tilt pattern orientation in agreement with experimental data.

Characterization of nanostructured VO2 thin films grown by magnetron controlled sputtering deposition and post annealing method.

PubMed

Chen, Sihai; Lai, Jianjun; Dai, Jun; Ma, Hong; Wang, Hongchen; Yi, Xinjian

2009-12-21

By magnetron controlled sputtering system, a new nanostructured metastable monoclinic phase VO2 (B) thin film has been fabricated. The testing result shows that this nanostructured VO2 (B) thin film has high temperature coefficient of resistance (TCR) of -7%/K. Scanning electron microscopy measurement shows that the average grain diameter of the VO2 (B) crystallite is between 100 and 250 nm. After post annealed, VO2 (B) crystallite is changed into monoclinic (M) phase VO2 (M) crystallite with the average grain diameter between 20 and 50 nm. A set up of testing the thin film switching time is established. The test result shows the switching time is about 50 ms. With the nanostructured VO2 (B) and VO2 (M) thin films, optical switches and high sensitivity detectors will be presented.

Investigation of electron beam lithography effects on metal-insulator transition behavior of vanadium dioxide

NASA Astrophysics Data System (ADS)

Yuce, H.; Alaboz, H.; Demirhan, Y.; Ozdemir, M.; Ozyuzer, L.; Aygun, G.

2017-11-01

Vanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.

Microstructure evolution determined by the crystalline phases competition in self-assembled WO3-BiVO4 hetero nanostructures

NASA Astrophysics Data System (ADS)

Song, Haili; Li, Chao; Nguyen Van, Chien; Dong, Wenxia; Qi, Ruijuan; Zhang, Yuanyuan; Huang, Rong; Chu, Ying-Hao; Duan, Chun-Gang

2018-02-01

A series of self-assembled WO3-BiVO4 nanostructured thin films were grown on the (001) yttria-stabilized zirconia (YSZ) substrate at the substrate temperatures of 400 °C, 500 °C, 550 °C, 600 °C, 650 °C and 700 °C by a pulsed laser deposition method. The microstructures including crystalline phases, epitaxial relationships, surface morphologies and interface structures were investigated by a combination of x-ray diffraction, scanning electron microscopy and high-resolution transmission electron microscopy. The sample grown at 400 °C was amorphous due to the low driving forces for nucleation and diffusion. For the samples made at 500 °C, 550 °C and 600 °C, the monoclinic BiVO4 matrix epitaxially grew on YSZ, forming the matrix, where the WO3 nanopillars were embedded in with a specific orientation relationship among BiVO4, WO3 and YSZ. However, in thin films deposited at 650 °C and 700 °C, the WO3 grains randomly grew on the YSZ substrate, which dominated the microstructures of the resultant thin films. Quantitative analyses of the microstructures revealed that the lateral grain sizes of BiVO4 and WO3 increased and the volume fraction of BiVO4 in the thin films decreased with the increase of the deposition temperature. A three-regime growth mechanism of the WO3-BiVO4 composite thin film was proposed based on the growth dynamics determined by the competition between BiVO4 and WO3.

Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications

PubMed Central

Skuza, J. R.; Scott, D. W.; Mundle, R. M.; Pradhan, A. K.

2016-01-01

We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5–10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT. PMID:26884225

Improved photoelectrochemical performance of BiVO4/MoO3 heterostructure thin films

NASA Astrophysics Data System (ADS)

Kodan, Nisha; Mehta, B. R.

2018-05-01

Bismuth vanadate (BiVO4) and Molybdenum trioxide (MoO3) thin films have been prepared by RF sputtering technique. BiVO4 thin films were deposited on indium doped tin oxide (In: SnO2; ITO) substrates at room temperature and 80W applied rf power. The prepared BiVO4 thin films were further annealed at 450°C for 2 hours in air to obtain crystalline monoclinic phase and successively coated with MoO3 thin films deposited at 150W rf power and 400°C for 30 minutes. The effect of coupling BiVO4 and MoO3 on the structural, optical and photoelectrochemical (PEC) properties have been studied. Optical studies reveal that coupling of BiVO4 and MoO3 results in improvement of optical absorption in visible region of solar spectrum. PEC study shows approximate 3-fold and 38-fold increment in photocurrent values of BiVO4/MoO3 (0.38 mA/cm2) heterostructure thin film as compared to MoO3 (0.15 mA/cm2) and BiVO4 (10 µA/cm2) thin films at applied bias of 1 V vs Ag/AgCl in 0.5 M Na2SO4 (pH=7) electrolyte.

Effect of oxygen partial pressure and VO2 content on hexagonal WO3 thin films synthesized by pulsed laser deposition technique

NASA Astrophysics Data System (ADS)

Kaushal, Ajay; Kaur, Davinder

2011-06-01

We report on the effect of oxygen partial pressure and vacuum annealing on structural and optical properties of pulsed laser-deposited nanocrystalline WO3 thin films. XRD results show the hexagonal phase of deposited WO3 thin films. The crystallite size was observed to increase with increase in oxygen partial pressure. Vacuum annealing changed the transparent as-deposited WO3 thin film to deep shade of blue color which increases the optical absorption of the film. The origin of this blue color could be due to the presence of oxygen vacancies associated with tungsten ions in lower oxidation states. In addition, the effects of VO2 content on structural, electrochemical, and optical properties of (WO3)1- x (VO2) x nanocomposite thin films have also been systematically investigated. Cyclic voltammogram exhibits a modification with the appearance of an extra cathodic peak for VO2-WO3 thin film electrode with higher VO2 content ( x ≥ 0.2). Increase of VO2 content in (WO3)1- x (VO2) x films leads to red shift in optical band gap.

Thermochromic properties of W-doped VO2 thin films deposited by aqueous sol-gel method for adaptive infrared stealth application

NASA Astrophysics Data System (ADS)

Liu, Dongqing; Cheng, Haifeng; Xing, Xin; Zhang, Chaoyang; Zheng, Wenwei

2016-07-01

The W doped VO2 thin films with various W contents were successfully deposited by aqueous sol-gel method followed by a post annealing process. The derived thin films were characterized by X-ray diffraction, Raman spectra, scanning electron microscopy and atomic force microscopy. Besides, the resistance-temperature relationship and infrared emissivity in the waveband 7.5-14 μm were analyzed, and the effects of W doping on the thermochromic properties of VO2 thin films were studied. The results show that W atoms enter the crystal lattice of VO2 and the transition temperature decreases gradually with increasing doping amount of W. The emissivity of VO2-W-4% thin films has dropped to 0.4 when its real temperature is above 30 °C. The thermal infrared images were also examined under different temperature by thermal imager. The results indicate that the temperature under which W doped VO2 thin films begin to have lower emissivity decreases gradually with increasing doping amount of W. W doped VO2 thin films can control its infrared radiation intensity actively at a lower temperature level of 30 °C, which has great application prospects in the adaptive infrared stealth technology.

Near-zero IR transmission of VO2 thin films deposited on Si substrate

NASA Astrophysics Data System (ADS)

Zhang, Chunzi; Koughia, Cyril; Li, Yuanshi; Cui, Xiaoyu; Ye, Fan; Shiri, Sheida; Sanayei, Mohsen; Wen, Shi-Jie; Yang, Qiaoqin; Kasap, Safa

2018-05-01

Vanadium dioxide (VO2) thin films of different thickness have been deposited on Si substrates by using DC magnetron sputtering. The effects of substrate pre-treatment by means of seeding (spin coating and ultrasonic bathing) and biasing on the structure and optical properties were investigated. Seeding results in a smaller grain size in the oxide film, whereas biasing results in square-textured crystals. VO2 thin films of 150 nm thick show a near-zero IR transmission in switched state. Especially, the 150 nm thick VO2 thin film with seeding treatment shows an enhanced switching efficiency.

Effect of W addition on the electrical switching of VO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajeswaran, Bharathi, E-mail: rajeswaran.bharathi@gmail.com, E-mail: rbharathi@mrc.iisc.ernet.in; Umarji, Arun M.

2016-03-15

Vanadium Oxide has been a frontrunner in the field of oxide electronics because of its metal-insulator transition (MIT). The interplay of different structures of VO{sub 2} has played a crucial role in deciding the magnitude of the first order MIT. Substitution doping has been found to introduce different polymorphs of VO{sub 2}. Hence the role of substitution doping in stabilizing the competing phases of VO{sub 2} in the thin film form remains underexplored. Consequently there have been reports both discounting and approving such a stabilization of competing phases in VO{sub 2}. It is reported in the literature that the bandwidthmore » of the hysteresis and transition temperature of VO{sub 2} can be tuned by substitutional doping of VO{sub 2} with W. In this work, we have adopted a novel technique called, Ultrasonic Nebulized Spray Pyrolysis of Aqueous Combustion Mixture (UNSPACM) to deposit VO{sub 2} and W- doped VO{sub 2} as thin films. XRD and Raman spectroscopy were used to investigate the role of tungsten on the structure of VO{sub 2} thin films. Morphology of the thin films was found to be consisting of globular and porous nanoparticles of size ∼ 20 nm. Transition temperature decreased with the addition of W. We found that for 2.0 at % W doping in VO{sub 2}, the transition temperature has reduced from 68 {sup o} C to 25 {sup o} C. It is noted that W-doping in the process of reducing the transition temperature, alters the local structure and also increases room temperature carrier concentration.« less

Facile Phase Control of Multivalent Vanadium Oxide Thin Films (V2O5 and VO2) by Atomic Layer Deposition and Postdeposition Annealing.

PubMed

Song, Gwang Yeom; Oh, Chadol; Sinha, Soumyadeep; Son, Junwoo; Heo, Jaeyeong

2017-07-19

Atomic layer deposition was adopted to deposit VO x thin films using vanadyl tri-isopropoxide {VO[O(C 3 H 7 )] 3 , VTIP} and water (H 2 O) at 135 °C. The self-limiting and purge-time-dependent growth behaviors were studied by ex situ ellipsometry to determine the saturated growth conditions for atomic-layer-deposited VO x . The as-deposited films were found to be amorphous. The structural, chemical, and optical properties of the crystalline thin films with controlled phase formation were investigated after postdeposition annealing at various atmospheres and temperatures. Reducing and oxidizing atmospheres enabled the formation of pure VO 2 and V 2 O 5 phases, respectively. The possible band structures of the crystalline VO 2 and V 2 O 5 thin films were established. Furthermore, an electrochemical response and a voltage-induced insulator-to-metal transition in the vertical metal-vanadium oxide-metal device structure were observed for V 2 O 5 and VO 2 films, respectively.

Anisotropic vanadium dioxide sculptured thin films with superior thermochromic properties.

PubMed

Sun, Yaoming; Xiao, Xiudi; Xu, Gang; Dong, Guoping; Chai, Guanqi; Zhang, Hua; Liu, Pengyi; Zhu, Hanmin; Zhan, Yongjun

2013-09-25

VO2 (M) STF through reduction of V2O5 STF was prepared. The results illustrate that V2O5 STF can be successfully obtained by oblique angle thermal evaporation technique. After annealing at 550 °C/3 min, the V2O5 STF deposited at 85° can be easily transformed into VO2 STF with slanted columnar structure and superior thermochromic properties. After deposition SiO2 antireflective layer, Tlum of VO2 STF is enhanced 26% and ΔTsol increases 60% compared with that of normal VO2 thin films. Due to the anisotropic microstructure of VO2 STF, angular selectivity transmission of VO2 STF is observed and the solar modulation ability is further improved from 7.2% to 8.7% when light is along columnar direction. Moreover, the phase transition temperature of VO2 STF can be depressed into 54.5 °C without doping. Considering the oblique incidence of sunlight on windows, VO2 STF is more beneficial for practical application as smart windows compared with normal homogenous VO2 thin films.

Anisotropic vanadium dioxide sculptured thin films with superior thermochromic properties

PubMed Central

Sun, Yaoming; Xiao, Xiudi; Xu, Gang; Dong, Guoping; Chai, Guanqi; Zhang, Hua; Liu, Pengyi; Zhu, Hanmin; Zhan, Yongjun

2013-01-01

VO2 (M) STF through reduction of V2O5 STF was prepared. The results illustrate that V2O5 STF can be successfully obtained by oblique angle thermal evaporation technique. After annealing at 550°C/3 min, the V2O5 STF deposited at 85° can be easily transformed into VO2 STF with slanted columnar structure and superior thermochromic properties. After deposition SiO2 antireflective layer, Tlum of VO2 STF is enhanced 26% and ΔTsol increases 60% compared with that of normal VO2 thin films. Due to the anisotropic microstructure of VO2 STF, angular selectivity transmission of VO2 STF is observed and the solar modulation ability is further improved from 7.2% to 8.7% when light is along columnar direction. Moreover, the phase transition temperature of VO2 STF can be depressed into 54.5°C without doping. Considering the oblique incidence of sunlight on windows, VO2 STF is more beneficial for practical application as smart windows compared with normal homogenous VO2 thin films. PMID:24067743

Studies of electronic and magnetic properties of LaVO3 thin film

NASA Astrophysics Data System (ADS)

Jana, Anupam; Karwal, Sharad; Choudhary, R. J.; Phase, D. M.

2018-04-01

We have investigated the electronic and magnetic properties of pulsed laser deposited Mott insulator LaVO3 (LVO) thin film. Structural characterization revels the single phase [00l] oriented LVO thin film. Enhancement of out of plane lattice parameter indicates the compressively strained LVO film. Electron spectroscopic studies demonstrate that vanadium is present in V3+ state. An energy dispersive X-ray spectroscopic study ensures the stoichiometric growth of the film. Very smooth surface is observed in scanning electron micrograph. Colour mapping for elemental distribution reflect the homogeneity of LVO film. The bifurcation between zero-field-cooled and Field-cooled curves clearly points towards the weak ferromagnetic phase presence in compressively strained LVO thin film. A finite value of coercivity at 300 K reflects the possibility of room temperature ferromagnetism of LVO thin film.

Effect of ZnO buffer layer on phase transition properties of vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Lekang; Li, Chunbo

2016-03-01

VO2 thin films were prepared on ZnO buffer layers by DC magnetron sputtering at room temperature using vanadium target and post annealing at 400 °C. The ZnO buffer layers with different thickness deposited on glass substrates by magnetron sputtering have a high visible and near infrared optical transmittance. The electrical resistivity and the phase transition properties of the VO2/ZnO composite thin films in terms of temperature were investigated. The results showed that the resistivity variation of VO2 thin film with ZnO buffer layer deposited for 35 min was 16 KΩ-cm. The VO2/ZnO composite thin films exhibit a reversible semiconductor-metal phase transition at 48 °C.

Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Lim, Herianto; Stavrias, Nikolas; Johnson, Brett C.; Marvel, Robert E.; Haglund, Richard F.; McCallum, Jeffrey C.

2014-03-01

Vanadium dioxide (VO2) is under intensive consideration for optical switching due to its reversible phase transition, which features a drastic and rapid shift in infrared reflectivity. Classified as an insulator-to-metal transition, the phase transition in VO2 can be induced thermally, electrically, and optically. When induced optically, the transition can occur on sub-picosecond time scales. It is interesting to dope VO2 with erbium ions (Er3+) and observe their combined properties. The first excited-state luminescence of Er3+ lies within the wavelength window of minimal transmission-loss in silicon and has been widely utilized for signal amplification and generation in silicon photonics. The incorporation of Er3+ into VO2 could therefore result in a novel photonic material capable of simultaneous optical switching and amplification. In this work, we investigate the optical switching and photoluminescence in Er-implanted VO2 thin films. Thermally driven optical switching is demonstrated in the Er-implanted VO2 by infrared reflectometry. Photoluminescence is observed in the thin films annealed at ˜800 °C or above. In addition, Raman spectroscopy and a statistical analysis of switching hysteresis are carried out to assess the effects of the ion implantation on the VO2 thin films. We conclude that Er-implanted VO2 can function as an optical switch and amplifier, but with reduced switching quality compared to pure VO2.

Study on Ultrafast Photodynamics of Novel Multilayered Thin Films for Device Applications

DTIC Science & Technology

2004-07-31

study ultrafast phase-transition of VO2 thin film. This part of work was started right after the new laser installed. With better laser output...1-3]. With the purpose of combined effect that the proposed ultrafast phase-transition VO2 thin film deposited on a substrate of heavy metal...second point of focus was to study ultrafast phase-transition of VO2 thin film. This part of work was started right after the new laser installed

Optical constants, dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

NASA Astrophysics Data System (ADS)

Sarkar, S.; Das, N. S.; Chattopadhyay, K. K.

2014-07-01

BiVO4 thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO4 target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO4 target material was prepared through solid-state reaction method by heating Bi2O3 and V2O5 mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV-Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO4 thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO4 thin films have been investigated in detail. Dielectric properties of the BiVO4 thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO4 thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO4.

Effects of Zirconium Ions Doping on the Structural and Thermochromic Properties of VO2 Thin Films

NASA Astrophysics Data System (ADS)

Li, Yuanbao; Liu, Juncheng; Wang, Danping; Dang, Yuanyuan

2017-11-01

As an inorganic functional material, VO2 thin films are expected to be used for smart windows. However, these films are not conducive to practical applications when the phase transition temperature ( Tc) of the VO2 is approximately 68°C, which is greater than room temperature. To decrease Tc, the effect of Zr4+ doping on the structure and properties of VO2 films were investigated. The films were prepared using a sol-gel process, spin-coating on quartz glasses, and annealing at 525°C in a tube furnace within a nitrogen atmosphere. The results demonstrate that these films have a highly preferential crystalline orientation on the substrate; however, the primary two x-ray diffraction pattern peaks shift slightly toward the small angle, and when 7 at.% Zr4+ was doped in the VO2 film, the deviation angle was 0.16°, and the crystallite size was approximately 98 nm. A large number of grains were found on the surface of the pure VO2 films, but all the Zr4+ doped films had a layered structure, and the thickness of the films was approximately 200 nm. The Tc of these films was characterized using differential scanning calorimetry, and the luminous and solar transmittance was characterized using a UV-Vis-NIR spectrophotometer, which demonstrated that the effect of Zr4+ doping decreased Tc by approximately 1°C per 1 at.% on average, and the Tc of the 7 at.% film was slightly greater than that of the 5 at.% film, the phase transition temperature of which was 61.4°C. The transmittance decreased as the doping concentration increased, and 1 at.% Zr4+ doping increased the luminous regulation efficiency (Δ T lum) and solar modulation efficiency (Δ T sol). The Δ T lum of the pure VO2 film and the 1 at.% Zr4+-doped VO2 films was 10.9% and 11.2%, and Δ T sol was 14.4 and 15.2%, respectively.

Facile fabrication of an efficient BiVO4 thin film electrode for water splitting under visible light irradiation.

PubMed

Jia, Qingxin; Iwashina, Katsuya; Kudo, Akihiko

2012-07-17

An efficient BiVO(4) thin film electrode for overall water splitting was prepared by dipping an F-doped SnO(2) (FTO) substrate electrode in an aqueous nitric acid solution of Bi(NO(3))(3) and NH(4)VO(3), and subsequently calcining it. X-ray diffraction of the BiVO(4) thin film revealed that a photocatalytically active phase of scheelite-monoclinic BiVO(4) was obtained. Scanning electron microscopy images showed that the surface of an FTO substrate was uniformly coated with the BiVO(4) film with 300-400 nm of the thickness. The BiVO(4) thin film electrode gave an excellent anodic photocurrent with 73% of an IPCE at 420 nm at 1.0 V vs. Ag/AgCl. Modification with CoO on the BiVO(4) electrode improved the photoelectrochemical property. A photoelectrochemical cell consisting of the BiVO(4) thin film electrode with and without CoO, and a Pt counter electrode was constructed for water splitting under visible light irradiation and simulated sunlight irradiation. Photocurrent due to water splitting to form H(2) and O(2) was confirmed with applying an external bias smaller than 1.23 V that is a theoretical voltage for electrolysis of water. Water splitting without applying external bias under visible light irradiation was demonstrated using a SrTiO(3)Rh photocathode and the BiVO(4) photoanode.

Solution-processed phase-change VO(2) metamaterials from colloidal vanadium oxide (VO(x)) nanocrystals.

PubMed

Paik, Taejong; Hong, Sung-Hoon; Gaulding, E Ashley; Caglayan, Humeyra; Gordon, Thomas R; Engheta, Nader; Kagan, Cherie R; Murray, Christopher B

2014-01-28

We demonstrate thermally switchable VO2 metamaterials fabricated using solution-processable colloidal nanocrystals (NCs). Vanadium oxide (VOx) NCs are synthesized through a nonhydrolytic reaction and deposited from stable colloidal dispersions to form NC thin films. Rapid thermal annealing transforms the VOx NC thin films into monoclinic, nanocrystalline VO2 thin films that show a sharp, reversible metal-insulator phase transition. Introduction of precise concentrations of tungsten dopings into the colloidal VOx NCs enables the still sharp phase transition of the VO2 thin films to be tuned to lower temperatures as the doping level increases. We fabricate "smart", differentially doped, multilayered VO2 films to program the phase and therefore the metal-insulator behavior of constituent vertically structured layers with temperature. With increasing temperature, we tailored the optical response of multilayered films in the near-IR and IR regions from that of a strong light absorber, in a metal-insulator structure, to that of a Drude-like reflector, characteristic of a pure metallic structure. We demonstrate that nanocrystal-based nanoimprinting can be employed to pattern multilayered subwavelength nanostructures, such as three-dimensional VO2 nanopillar arrays, that exhibit plasmonic dipolar responses tunable with a temperature change.

Enhanced Visible Transmittance of Thermochromic VO2 Thin Films by SiO2 Passivation Layer and Their Optical Characterization

PubMed Central

Yu, Jung-Hoon; Nam, Sang-Hun; Lee, Ji Won; Boo, Jin-Hyo

2016-01-01

This paper presents the preparation of high-quality vanadium dioxide (VO2) thermochromic thin films with enhanced visible transmittance (Tvis) via radio frequency (RF) sputtering and plasma enhanced chemical vapor deposition (PECVD). VO2 thin films with high Tvis and excellent optical switching efficiency (Eos) were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc) of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58%) compared with the pristine samples (λ 650 nm, 43%). This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications. PMID:28773679

Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

NASA Astrophysics Data System (ADS)

Takayanagi, Makoto; Tsuchiya, Takashi; Namiki, Wataru; Ueda, Shigenori; Minohara, Makoto; Horiba, Koji; Kumigashira, Hiroshi; Terabe, Kazuya; Higuchi, Tohru

2018-03-01

Epitaxial Ca1-xSrxVO3 (0 ≦ x ≦ 1) thin films were grown on (100)-oriented SrTiO3 substrates by using the pulsed laser deposition technique. In contrast to the previous report that metal-insulator transition (MIT) in Ca1-xSrxVO3 (CSVO) was achieved only for extremely thin films (several nm thick), MIT was observed at 39, 72, and 113 K for films with a thickness of 50 nm. The electronic structure was investigated by hard and soft X-ray photoemission spectroscopy (HX-PES and SX-PES). The difference between these PES results was significant due to the variation in an escape depth of photoelectrons of PES. While HX-PES showed that the V 2p3/2 spectra consisted of four peaks (V5+, V4+, V3+, and V2+/1+), SX-PES showed only three peaks (V5+, V4+, and V3+). This difference can be caused by a strain from the substrate, which leads to the chemical disorder (V5+, V4+, V3+, and V2+/1+). The thin film near the substrate is affected by the strain. The positive magnetoresistance is attributed to the effect of electron-electron interactions in the disorder system. Therefore, the emergence of MIT can be explained by the electron-electron interactions from the chemical disorder due to the strain.

Switchable vanadium oxide films by a sol-gel process

NASA Astrophysics Data System (ADS)

Partlow, D. P.; Gurkovich, S. R.; Radford, K. C.; Denes, L. J.

1991-07-01

Thin polycrystalline films of VO2 and V2O3 were deposited on a variety of substrates using a sol-gel process. The orientation, microstructure, optical constants, and optical and electrical switching behavior are presented. These films exhibited sharp optical switching behavior even on an amorphous substrate such as fused silica. The method yields reproducible results and is amenable to the coating of large substrates and curved surfaces such as mirrors and lenses.

BiVO4 thin film photoanodes grown by chemical vapor deposition.

PubMed

Alarcón-Lladó, Esther; Chen, Le; Hettick, Mark; Mashouf, Neeka; Lin, Yongjing; Javey, Ali; Ager, Joel W

2014-01-28

BiVO4 thin film photoanodes were grown by vapor transport chemical deposition on FTO/glass substrates. By controlling the flow rate, the temperatures of the Bi and V sources (Bi metal and V2O5 powder, respectively), and the temperature of the deposition zone in a two-zone furnace, single-phase monoclinic BiVO4 thin films can be obtained. The CVD-grown films produce global AM1.5 photocurrent densities up to 1 mA cm(-2) in aqueous conditions in the presence of a sacrificial reagent. Front illuminated photocatalytic performance can be improved by inserting either a SnO2 hole blocking layer and/or a thin, extrinsically Mo doped BiVO4 layer between the FTO and the CVD-grown layer. The incident photon to current efficiency (IPCE), measured under front illumination, for BiVO4 grown directly on FTO/glass is about 10% for wavelengths below 450 nm at a bias of +0.6 V vs. Ag/AgCl. For BiVO4 grown on a 40 nm SnO2/20 nm Mo-doped BiVO4 back contact, the IPCE is increased to over 40% at wavelengths below 420 nm.

Epitaxial VO2 thin-film-based radio-frequency switches with electrical activation

NASA Astrophysics Data System (ADS)

Lee, Jaeseong; Lee, Daesu; Cho, Sang June; Seo, Jung-Hun; Liu, Dong; Eom, Chang-Beom; Ma, Zhenqiang

2017-09-01

Vanadium dioxide (VO2) is a correlated material exhibiting a sharp insulator-to-metal phase transition (IMT) caused by temperature change and/or bias voltage. We report on the demonstration of electrically triggered radio-frequency (RF) switches based on epitaxial VO2 thin films. The highly epitaxial VO2 and SnO2 template layer was grown on a (001) TiO2 substrate by pulsed laser deposition (PLD). A resistance change of the VO2 thin films of four orders of magnitude was achieved with a relatively low threshold voltage, as low as 13 V, for an IMT phase transition. VO2 RF switches also showed high-frequency responses of insertion losses of -3 dB at the on-state and return losses of -4.3 dB at the off-state over 27 GHz. Furthermore, an intrinsic cutoff frequency of 17.4 THz was estimated for the RF switches. The study on electrical IMT dynamics revealed a phase transition time of 840 ns.

Structure and Properties of VO2 and Titanium Dioxide Based Epitaxial Heterostructures Integrated with Silicon and Sapphire Substrates

NASA Astrophysics Data System (ADS)

Bayati, Mohammad Reza

The main focus of this study was placed on structure-property correlation in TiO2 and VO2 based epitaxial heterostructures where the photochemical and electrical properties were tuned through microstructural engineering. In the framework of domain matching epitaxy, epitaxial growth of TiO2 and VO2 heterostructures on different substrates were explained. The theta-2theta and ϕ scan X-ray diffraction measurements and detailed high resolution electron microscopy studies corroborated our understanding of the epitaxial growth and the crystallographic arrangement across the interfaces. The influence of the laser and substrate variables on structural characteristics of the films was investigated using X-ray photoelectron spectroscopy, room temperature photoluminescence spectroscopy, and UV-Vis spectrophotometry. In addition, morphological studies were performed by atomic force microscopy. Photochemical properties of the heterostructures were assessed through measuring surface wettability characteristics and photocatalytic reaction rate constant of degradation of 4-chlorophenol under ultraviolet and visible irradiations. We also studied electrical properties employing 4-probe measurement technique. The effect of post treatment processes, such as vacuum annealing and laser treatment, on structure and properties was investigated as well. The role of point defects and deviation from the stoichiometry on photochemical and electrical properties was addressed. In this research, TiO2 epilayers with controlled phase structure, defect content, and crystallographic alignments were grown on sapphire and silicon substrates. Integration with silicon was achieved using cubic and tetragonal yttria-stabilized zirconia buffer layers. I was able to tune the phase structure of the TiO2 based heterostructures from pure rutile to pure anatase and establish an epitaxial relationship across the interfaces in each case. These heterostructures were used for two different purposes. First, their application in environmental remediation was taken into account. The photochemical efficiency of the samples was evaluated under ultraviolet and visible illuminations. I was able to establish a correlation between the growth conditions and the photocatalytic activity of single crystalline TiO 2 thin films. Visible-light-responsive TiO2 films were fabricated via vacuum annealing of the samples where point defects, namely oxygen vacancies and titanium interstitial, are surmised to play a critical role. An ultrafast switching was observed in wetting characteristics of the single crystalline rutile TiO2 films from a hydrophobic state to a superhydrophilic state by single pulsed excimer laser annealing. It was observed that the laser annealing almost doubles the photocatalytic efficiency of the anatase epitaxial thin films. I was able to measure the photochemical properties of the rutile and the anatase TiO2 heterostructures in a controlled way due to the single crystalline nature of the films. Second, the rutile TiO2 epilayers with different out-of-plane orientations were deposited and used as a platform for VO2 based epitaxial heterostructures with the aim of manipulating of microstructure and electrical properties of the VO 2 films. Vanadium dioxide (VO2) is an interesting material due to the abrupt change in electrical resistivity and infrared transmittance at about 68 °C. The transition temperature can be tuned through microstructural engineering. It was the idea behind using rutile TiO2 with different crystallographic orientations as a template to tune the semiconductor to metal transition characteristics of the VO2 top layer. I successfully grew VO2(001), VO2(100), and VO2(2¯01) epitaxial thin films on TiO2(100)/c-sapphire, TiO2(101)/r-sapphire, and TiO2(001)/ m-sapphire platforms, respectively. It was observed that tetragonal phase of VO2 was stabilized at lower temperatures leading to a significant decrease in the semiconductor to metal transition temperature. In other words, we were able to tune the transition temperature of the VO 2 epitaxial heterostructures. This achievement introduces the VO 2 based single crystalline heterostructures as a promising candidate for a wide range of applications where different transition temperatures are required. The epitaxial relationships were established and atomic arrangement across the interfaces was studied in detail.

Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers

NASA Astrophysics Data System (ADS)

Kim, Heungsoo; Bingham, Nicholas S.; Charipar, Nicholas A.; Piqué, Alberto

2017-10-01

Epitaxial VO2/SnO2 thin film heterostructures were deposited on m-cut sapphire substrates via pulsed laser deposition. By adjusting SnO2 (150 nm) growth conditions, we are able to control the interfacial strain between the VO2 film and SnO2 buffer layer such that the semiconductor-to-metal transition temperature (TC) of VO2 films can be tuned without diminishing the magnitude of the transition. It is shown that in-plane tensile strain and out-of-plane compressive strain of the VO2 film leads to a decrease of Tc. Interestingly, VO2 films on SnO2 buffer layers exhibit a structural phase transition from tetragonal-like VO2 to tetragonal-VO2 during the semiconductor-to-metal transition. These results suggest that the strain generated by SnO2 buffer provides an effective way for tuning the TC of VO2 films.

Electric field induced metal-insulator transition in VO2 thin film based on FTO/VO2/FTO structure

NASA Astrophysics Data System (ADS)

Hao, Rulong; Li, Yi; Liu, Fei; Sun, Yao; Tang, Jiayin; Chen, Peizu; Jiang, Wei; Wu, Zhengyi; Xu, Tingting; Fang, Baoying

2016-03-01

A VO2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO2 (FTO) conductive glass substrate. The FTO/VO2/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I-V hysteresis loop for the FTO/VO2/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO2/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.

Semiconductor-insulator transition in VO{sub 2} (B) thin films grown by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rúa, Armando; Díaz, Ramón D.; Lysenko, Sergiy

2015-09-28

Thin films of B-phase VO{sub 2} were grown by pulsed-laser deposition on glass and (100)-cut MgO substrates in a temperature range from 375 to 425 °C and at higher gas pressures than usual for this technique. The films were strongly oriented, with ab-planes parallel to the substrate surface. Detailed study of surface morphology through Atomic Force Microscopy images suggest significant differences in evolution as a function of growth temperature for films on the two types of substrates. Measurements of electrical conductivities through cooling-heating cycles from room temperature to 120 K showed changes of five orders of magnitude, with steeper changes between roommore » temperature and ∼150 K, which corresponds with the extended and reversible phase transition known to occur for this material. At lower temperatures conductivities exhibited Arrhenius behavior, indicating that no further structural change was occurring and that conduction is thermally activated. In this lower temperature range, conductivity of the samples can be described by the near-neighbor hopping model. No hysteresis was found between the cooling and heating braches of the cycles, which is at variance with previous results published for VO{sub 2} (B). This apparent lack of hysteresis for thin films grown in the manner described and the large conductivity variation as a function of temperature observed for the samples suggests this material could be of interest for infrared sensing applications.« less

Infrared characteristics of VO2 thin films for smart window and laser protection applications

NASA Astrophysics Data System (ADS)

Huang, Zhangli; Chen, Sihai; Lv, Chaohong; Huang, Ying; Lai, Jianjun

2012-11-01

Vanadium dioxide (VO2) films with a low semiconductor-to-metal transition temperature of 45 °C were fabricated through direct current magnetron sputtering followed by a post-annealing. Atomic force microscopy measurements show that the VO2 grain size is about one hundred of nanometers. Infrared (IR) characteristic is well investigated by applying a He-Ne laser power intensity measurement, and the result reveals that the VO2 film exhibits excellent IR switching property. Furthermore, solar smart window and laser protection experiments demonstrate that the obtained VO2 thin film is a promising material for the application in related fields.

Characterization of pulsed laser deposition grown V2O3 converted VO2

NASA Astrophysics Data System (ADS)

Majid, Suhail; Shukla, D. K.; Rahman, F.; Gautam, Kamini; Sathe, V. G.; Choudhary, R. J.; Phase, D. M.

2016-10-01

Controllable tuning of Metal-insulator transition in VxOy thin film has been a field of extensive research. However controlled synthesis of desired Vanadium oxide phase is a challenging task. We have successfully achieved VO2 phase on Silicon substrate after post deposition annealing treatment to the PLD grown as deposited V2O3 thin films. The annealed thin film was characterized by x-ray diffraction (XRD), resistivity, Raman spectroscopy, X-ray absorption spectroscopy (XAS) and X-ray photoelectron spectroscopy (XPS) measurements. XRD confirms the crystalline nature and growth of VO2 phase in thin film. The characteristic MIT was observed from resistivity measurements and transition temperature appeared at lower value around 336 K, compared to bulk VO2. The structural transition accompanied with MIT from lower temperature monoclinic phase to higher temperature Rutile phase became evident from temperature dependent Raman measurements. Chemical state of vanadium was examined using XAS and XPS measurements which confirm the presence of +4 oxidation state of vanadium in thin film.

Angle-independent VO2 Thin Film on Glass Fiber Cloth as a Soft-Smart-Mirror (SSM)

PubMed Central

Cai, Nianjin; Zhang, Wang; Wang, Wanlin; Zhu, Yuchen; Zada, Imran; Gu, Jiajun; Liu, Qinglei; Su, Huilan; Guo, Cuiping; Zhang, Zhijian; Zhang, Jianzhong; Wu, Liping; Zhang, Di

2016-01-01

Designing materials with a negative feedback function is beneficial for achieving temperature regulation inside a greenhouse. VO2 has been studied extensively because of its low insulator-to-metal transition temperature (IMT). In this study, reflection changes during a VO2 phase transition were investigated. Glass fiber cloth was used as a substrate, as it is stable and soft. A VO2 thin film on a glass fiber cloth whose surface contained 96% V4+ and 4% V5+ was prepared using an inorganic sol-gels method. The insulator-to-metal transition temperature was decreased by 38 °C, which was observed from the reflection curve detected using an angle-resolved spectrometer. This decrease in IMT occurred mainly because of the presence of V5+, which causes destabilization of the monoclinic phase of VO2. When the greenhouse temperature was increased from 30 °C to 40 °C, the reflected intensity of VO2 on glass fiber cloth decreased by 22% for the wavelength range of 400 nm to 800 nm. In addition, the angle-independent property of the VO2 thin film was observed using an angle-resolved spectrometer. Owing to its thermo-reflective properties, the thin film can serve as a soft-smart-mirror (SSM) inside a greenhouse to stabilize the temperature, playing a negative feedback role. PMID:27849051

Angle-independent VO2 Thin Film on Glass Fiber Cloth as a Soft-Smart-Mirror (SSM)

NASA Astrophysics Data System (ADS)

Cai, Nianjin; Zhang, Wang; Wang, Wanlin; Zhu, Yuchen; Zada, Imran; Gu, Jiajun; Liu, Qinglei; Su, Huilan; Guo, Cuiping; Zhang, Zhijian; Zhang, Jianzhong; Wu, Liping; Zhang, Di

2016-11-01

Designing materials with a negative feedback function is beneficial for achieving temperature regulation inside a greenhouse. VO2 has been studied extensively because of its low insulator-to-metal transition temperature (IMT). In this study, reflection changes during a VO2 phase transition were investigated. Glass fiber cloth was used as a substrate, as it is stable and soft. A VO2 thin film on a glass fiber cloth whose surface contained 96% V4+ and 4% V5+ was prepared using an inorganic sol-gels method. The insulator-to-metal transition temperature was decreased by 38 °C, which was observed from the reflection curve detected using an angle-resolved spectrometer. This decrease in IMT occurred mainly because of the presence of V5+, which causes destabilization of the monoclinic phase of VO2. When the greenhouse temperature was increased from 30 °C to 40 °C, the reflected intensity of VO2 on glass fiber cloth decreased by 22% for the wavelength range of 400 nm to 800 nm. In addition, the angle-independent property of the VO2 thin film was observed using an angle-resolved spectrometer. Owing to its thermo-reflective properties, the thin film can serve as a soft-smart-mirror (SSM) inside a greenhouse to stabilize the temperature, playing a negative feedback role.

Angle-independent VO2 Thin Film on Glass Fiber Cloth as a Soft-Smart-Mirror (SSM).

PubMed

Cai, Nianjin; Zhang, Wang; Wang, Wanlin; Zhu, Yuchen; Zada, Imran; Gu, Jiajun; Liu, Qinglei; Su, Huilan; Guo, Cuiping; Zhang, Zhijian; Zhang, Jianzhong; Wu, Liping; Zhang, Di

2016-11-16

Designing materials with a negative feedback function is beneficial for achieving temperature regulation inside a greenhouse. VO 2 has been studied extensively because of its low insulator-to-metal transition temperature (IMT). In this study, reflection changes during a VO 2 phase transition were investigated. Glass fiber cloth was used as a substrate, as it is stable and soft. A VO 2 thin film on a glass fiber cloth whose surface contained 96% V 4+ and 4% V 5+ was prepared using an inorganic sol-gels method. The insulator-to-metal transition temperature was decreased by 38 °C, which was observed from the reflection curve detected using an angle-resolved spectrometer. This decrease in IMT occurred mainly because of the presence of V 5+ , which causes destabilization of the monoclinic phase of VO 2 . When the greenhouse temperature was increased from 30 °C to 40 °C, the reflected intensity of VO 2 on glass fiber cloth decreased by 22% for the wavelength range of 400 nm to 800 nm. In addition, the angle-independent property of the VO 2 thin film was observed using an angle-resolved spectrometer. Owing to its thermo-reflective properties, the thin film can serve as a soft-smart-mirror (SSM) inside a greenhouse to stabilize the temperature, playing a negative feedback role.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties.

PubMed

Dey, Arjun; Nayak, Manish Kumar; Esther, A Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A K; Bera, Parthasarathi; Barshilia, Harish C; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D Raghavendra; Sridhara, N; Sharma, Anand Kumar

2016-11-17

Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V 2 O 5 , V 2 O 3 and VO 2 along with MoO 3 . Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10 -5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

NASA Astrophysics Data System (ADS)

Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

2016-11-01

Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10-5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

Naturally formed ultrathin V2O5 heteroepitaxial layer on VO2/sapphire(001) film

NASA Astrophysics Data System (ADS)

Littlejohn, Aaron J.; Yang, Yunbo; Lu, Zonghuan; Shin, Eunsung; Pan, KuanChang; Subramanyam, Guru; Vasilyev, Vladimir; Leedy, Kevin; Quach, Tony; Lu, Toh-Ming; Wang, Gwo-Ching

2017-10-01

Vanadium dioxide (VO2) and vanadium pentoxide (V2O5) thin films change their properties in response to external stimuli such as photons, temperature, electric field and magnetic field and have applications in electronics, optical devices, and sensors. Due to the multiple valence states of V and non-stoichiometry in thin films, it is challenging to grow epitaxial, single-phase V-oxide on a substrate, or a heterostructure of two epitaxial V-oxides. We report the formation of a heterostructure consisting of a few nm thick ultrathin V2O5 epitaxial layer on pulsed laser deposited tens of nm thick epitaxial VO2 thin films grown on single crystal Al2O3(001) substrates without post annealing of the VO2 film. The simultaneous observation of the ultrathin epitaxial V2O5 layer and VO2 epitaxial film is only possible by our unique reflection high energy electron diffraction pole figure analysis. The out-of-plane and in-plane epitaxial relationships are V2O5[100]||VO2[010]||Al2O3[001] and V2O5[03 2 bar ]||VO2[100]||Al2O3[1 1 bar 0], respectively. The existence of the V2O5 layer on the surface of the VO2 film is also supported by X-ray photoelectron spectroscopy and Raman spectroscopy.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Yong; Pan, Xuan; Bernussi, Ayrton A.

We demonstrate that catalyst-assisted hydrogen spillover doping of VO{sub 2} thin films significantly alters the metal-insulator transition characteristics and stabilizes the metallic rutile phase at room temperature. With hydrogen inserted into the VO{sub 2} lattice, high resolution X-ray diffraction reveals expansion of the V-V chain separation when compared to the VO{sub 2}(R) phase. The donated free electrons, possibly from O-H bond formation, stabilize the VO{sub 2}(R) to low temperatures. By controlling the amount of dopants to obtain mixed insulating and metallic phases, VO{sub 2} resistivity can be continuously tuned until a critical condition is achieved that suppresses Fabry-Perot resonances. Ourmore » results demonstrate that hydrogen spillover is an effective technique to tune the electrical and optical properties of VO{sub 2} thin films.« less

Dynamic structural colour using vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Wilson, K.; Marocico, C. A.; Bradley, A. L.

2018-06-01

A thin film stack consisting of layers of indium tin oxide (ITO) with an intermediate vanadium oxide (VO2) layer on an optically thick silver film has been investigated for dynamic structural colour. The structure benefits from the phase change properties of VO2. Compared with other phase change materials, such as germanium antimony telluride (GST), VO2 can be offered as a lower power consumption alternative. It has been overlooked in the visible spectral range due to its smaller refractive index change below 700 nm. We demonstrate that the sensitivity of the visible reflectance spectrum to the change in phase of a 30 nm VO2 layer is increased after it is incorporated in a thin film stack, with performance comparable to other phase change materials. The extent to which dynamic tuning of the reflectance spectra of ITO–VO2–ITO–Ag thin film stacks can be exploited for colour switching is reported, with approximately 25% change in reflectance demonstrated at 550 nm. Inclusion of a top ITO layer is also shown to improve the chromaticity change on phase transition.

Sapphire substrate-induced effects in VO2 thin films grown by oxygen plasma-assisted pulsed laser deposition

NASA Astrophysics Data System (ADS)

Skuza, J. R.; Scott, D. W.; Pradhan, A. K.

2015-11-01

We investigate the structural and electronic properties of VO2 thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO2 film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO2, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO2 film growth with SMTs that can be easily tailored for device applications.

Structure and enhanced thermochromic performance of low-temperature fabricated VO2/V2O3 thin film

NASA Astrophysics Data System (ADS)

Sun, Guangyao; Cao, Xun; Gao, Xiang; Long, Shiwei; Liang, Mengshi; Jin, Ping

2016-10-01

For VO2-based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. Here, the thermochromic films of VO2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V2O3 interlayer. V2O3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO2 film. The VO2/V2O3 films display high solar modulating ability and narrow hysteresis loop. Our data can serve as a promising point for industrial production with high degree of crystallinity at a low temperature.

Observation of reduced phase transition temperature in N-doped thermochromic film of monoclinic VO2

NASA Astrophysics Data System (ADS)

Wan, Meinan; Xiong, Mo; Li, Neng; Liu, Baoshun; Wang, Shuo; Ching, Wai-Yim; Zhao, Xiujian

2017-07-01

Research on monoclinic (M1) phase of VO2 has attracted a great of interest for smart coating applications due to its exceptional thermochromic property. Herein, we report the results using a novel approach to synthesize N-doped VO2(M1) thin films with high purity by heat treatment in NH3 atmosphere. The N dopant in the film can be regulated by varying NH3 concentration during the annealing process. We find that the N atoms are located at the interstitial sites or substitute oxygen atoms, and the V-N bonds in the VO2 thin films increase with NH3 concentration. The metal to insulator transition (MIT) temperature (τc,h) of the VO2 thin film is effectively reduced from 80.0 to 62.9 °C, while the solar modulation efficiency (ΔTsol) and the modulation efficiency at 2000 nm (ΔT2000nm) are 7.36% and 55.6% respectively. The band gap of N-doped VO2 thin films related to MIT (Eg1) is estimated to be as low as 0.18-0.25 eV whereas the band gap associated with the visible transparency (Eg2) is about 1.50-1.58 eV. Based on the highly accurate first-principles calculations, the Eg1 of VO2 (M1) is reduced after substituted or interstitial N-doping, while the Eg2 alters with the mode of N-doping, which is excellent agreement with experimental measurement.

Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal—insulator phase transition properties

NASA Astrophysics Data System (ADS)

Liang, Ji-Ran; Wu, Mai-Jun; Hu, Ming; Liu, Jian; Zhu, Nai-Wei; Xia, Xiao-Xu; Chen, Hong-Da

2014-07-01

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal—insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from (1¯11) to (011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal—insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal—insulator transition.

Metal-insulator transition characteristics of VO2 thin films grown on Ge(100) single crystals

NASA Astrophysics Data System (ADS)

Yang, Z.; Ko, C.; Ramanathan, S.

2010-10-01

Phase transitions exhibited by correlated oxides could be of potential relevance to the emerging field of oxide electronics. We report on the synthesis of high-quality VO2 thin films grown on single crystal Ge(100) substrates by physical vapor deposition and their metal-insulator transition (MIT) properties. Thermally triggered MIT is demonstrated with nearly three orders of magnitude resistance change across the MIT with transition temperatures of 67 °C (heating) and 61 °C (cooling). Voltage-triggered hysteretic MIT is observed at room temperature at threshold voltage of ˜2.1 V for ˜100 nm thickness VO2 films. Activation energies for electron transport in the insulating and conducting states are obtained from variable temperature resistance measurements. We further compare the properties of VO2 thin films grown under identical conditions on Si(100) single crystals. The VO2 thin films grown on Ge substrate show higher degree of crystallinity, slightly reduced compressive strain, larger resistance change across MIT compared to those grown on Si. Depth-dependent x-ray photoelectron spectroscopy measurements were performed to provide information on compositional variation trends in the two cases. These results suggest Ge could be a suitable substrate for further explorations of switching phenomena and devices for thin film functional oxides.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

PubMed Central

Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

2016-01-01

Vanadium oxide-molybdenum oxide (VO-MO) thin (21–475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45–50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10−5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films. PMID:27853234

Structure and enhanced thermochromic performance of low-temperature fabricated VO 2/V 2O 3 thin film

DOE PAGES

Sun, Guangyao; Cao, Xun; Gao, Xiang; ...

2016-10-06

For VO 2-based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. In this paper, the thermochromic films of VO 2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V 2O 3 interlayer. V 2O 3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO 2 film. The VO 2/V 2O 3 films display high solar modulating ability and narrow hysteresis loop. Finally, our data can serve as a promising point formore » industrial production with high degree of crystallinity at a low temperature.« less

Thermally tunable VO2-SiO2 nanocomposite thin-film capacitors

NASA Astrophysics Data System (ADS)

Sun, Yifei; Narayanachari, K. V. L. V.; Wan, Chenghao; Sun, Xing; Wang, Haiyan; Cooley, Kayla A.; Mohney, Suzanne E.; White, Doug; Duwel, Amy; Kats, Mikhail A.; Ramanathan, Shriram

2018-03-01

We present a study of co-sputtered VO2-SiO2 nanocomposite dielectric thin-film media possessing continuous temperature tunability of the dielectric constant. The smooth thermal tunability is a result of the insulator-metal transition in the VO2 inclusions dispersed within an insulating matrix. We present a detailed comparison of the dielectric characteristics of this nanocomposite with those of a VO2 control layer and of VO2/SiO2 laminate multilayers of comparable overall thickness. We demonstrated a nanocomposite capacitor that has a thermal capacitance tunability of ˜60% between 25 °C and 100 °C at 1 MHz, with low leakage current. Such thermally tunable capacitors could find potential use in applications such as sensing, thermal cloaks, and phase-change energy storage devices.

Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

NASA Astrophysics Data System (ADS)

Dai, Yuehua; Pan, Zhiyong; Wang, Feifei; Li, Xiaofeng

2016-08-01

The work investigated the shape and orientation of oxygen vacancy clusters in HfO2-base resistive random access memory (ReRAM) by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO2, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO2 super-cell was obtained.

Sharpness and intensity modulation of the metal-insulator transition in ultrathin VO2 films by interfacial structure manipulation

NASA Astrophysics Data System (ADS)

McGee, Ryan; Goswami, Ankur; Pal, Soupitak; Schofield, Kalvin; Bukhari, Syed Asad Manzoor; Thundat, Thomas

2018-03-01

Vanadium dioxide (VO2) undergoes a structural transformation from monoclinic (insulator) to tetragonal (metallic) upon heating above 340 K, accompanied by abrupt changes to its electronic, optical, and mechanical properties. Not only is this transition scientifically intriguing, but there are also numerous applications in sensing, memory, and optoelectronics. Here we investigate the effect different substrates and the processing conditions have on the characteristics metal-insulator transition (MIT), and how the properties can be tuned for specific applications. VO2 thin films were grown on c -plane sapphire (0001) and p-type silicon <100 > by pulsed laser deposition. High-resolution x-ray diffraction along with transmission electron microscopy reveals textured epitaxial growth on sapphire by domain-matching epitaxy, while the presence of a native oxide layer on silicon prevented any preferential growth resulting in a polycrystalline film. An orientation relationship of <001 > (010)VO2||<11 ¯00 > (0001)Al 2O3 was established for VO2 grown on sapphire, while no such relationship was found for VO2 grown on silicon. Surface-energy minimization is the driving force behind grain growth, as the lowest energy VO2 plane grew on silicon, while on sapphire the desire for epitaxial growth was dominant. Polycrystallinity of films grown on silicon caused a weaker and less prominent MIT than observed on sapphire, whose MIT was higher in magnitude and steeper in slope. The position of the MIT was shown to depend on the competing effects of misfit strain and grain growth. Higher deposition temperatures caused an increase in the MIT, while compressive strain resulted in a decreased MIT.

Growth and characterization of ultra thin vanadium oxide films

NASA Astrophysics Data System (ADS)

Song, Fangfang

This dissertation focuses on the growth and characterization of ultra thin VO2 films on technologically relevant Si/SiO2 substrate. The samples were prepared by magnetron sputtering with varying deposition and post annealing conditions. VO2(M1) films prepared under optimal condition with thickness around 42nm shows a continuous micro-structure and a metal insulator transition with resistivity change of two orders of magnitude. The transition temperature is determined to be 345K with a hysteresis width of approximately 8°C. The activation energy of the low temperature semiconducting VO2 monoclinic phase is determined to be 0.16+/-0.03ev. These properties are found to be fairly stable over time under ambient atmosphere. Temperature dependent hall measurements suggest that the decrease of the resistivity with increasing temperature is mainly caused by the increase of the number density of charge carriers, the energy gap of VO2 film in the semiconducting phase is 0.4ev and phonon scattering is the dominant scattering mechanism in the temperature range from 195K to 340K. Analysis based on composite model suggested that the sample has some untransitional phases with a length that is 1/4 of the grain size. Stress measurements using X-ray diffraction indicate that the ultra thin VO2 film has a large tensile stress of 2.0+/-0.2GPa. This value agrees well with that calculated thermal stress assuming the stress is due to differential thermal expansion between VO2 film and substrate. The stress is expected to lead to a shift of the transition temperature in the film, as observed. Using magnetron sputtering, VO2(B) film was able to obtained on Si substrate. The temperature dependent current voltage measurement on VO2(B) film did not show any abrupt change in the electrical resistivity. W - VO2(B) thin film - W metal semiconductor-metal I-V properties were found to be determined by reverse biased Schottky barrier at the W/VO 2(b) interface. And the Schottky height between VO2(B) and W was determined to be about 0.15ev, which indicate the electron affinity of the VO2(B) is about 4.35ev.

Au doping effects on electrical and optical properties of vanadium dioxides

NASA Astrophysics Data System (ADS)

Zhu, YaBin; He, Fan; Na, Jie

2012-03-01

Vanadium dioxides were fabricated on normal glass substrates using reactive radio frequency (RF) magnetron sputtering. The oxygen flow volume and annealed temperatures as growth parameters are systematically investigated. The electrical and optical properties of VO2 and Au:VO2 thin films with different growth conditions are discussed. The semiconductor-metal phase transition temperature decreased by ˜10°C for the sample with Au doping compared to the sample without Au doping. However, the optical transmittance of Au:VO2 thin films is much lower than that of bare VO2. These results show that Au doping has a marked effect on the electrical and optical properties.

Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films

NASA Astrophysics Data System (ADS)

Khamseh, S.; Araghi, H.; Ghahari, M.; Faghihi Sani, M. A.

2016-03-01

W-doped VO2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VOX-WOX-VOX ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO2 (M) and VO2 (B) was formed in VOX-WOX-VOX ceramic thin films. Tungsten content of VOX-WOX-VOX ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance ( R sq) of VOX-WOX-VOX ceramic thin films increased from 65 to 86 kΩ/sq. The VOX-WOX-VOX ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness.

Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skuza, J. R., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu; Scott, D. W.; Pradhan, A. K., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu

2015-11-21

We investigate the structural and electronic properties of VO{sub 2} thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO{sub 2} film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO{sub 2}, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO{sub 2} film growth with SMTs that can bemore » easily tailored for device applications.« less

Postfabrication annealing effects on insulator-metal transitions in VO2 thin-film devices.

PubMed

Rathi, Servin; Lee, In-yeal; Park, Jin-Hyung; Kim, Bong-Jun; Kim, Hyun-Tak; Kim, Gil-Ho

2014-11-26

In order to investigate the metal-insulator transition characteristics of VO2 devices annealed in reducing atmosphere after device fabrication at various temperature, electrical, chemical, and thermal characteristics are measured and analyzed. It is found that the sheet resistance and the insulator-metal transition point, induced by both voltage and thermal, decrease when the devices are annealed from 200 to 500 °C. The V 2p3/2 peak variation in X-ray photoelectron spectroscopy (XPS) characterization verifies the reduction of thin-films. A decrease of the transition temperature from voltage hysteresis measurements further endorse the reducing effects of the annealing on VO2 thin-film.

Irreversible metal-insulator transition in thin film VO2 induced by soft X-ray irradiation

NASA Astrophysics Data System (ADS)

Singh, V. R.; Jovic, V.; Valmianski, I.; Ramirez, J. G.; Lamoureux, B.; Schuller, Ivan K.; Smith, K. E.

2017-12-01

In this study, we show the ability of soft x-ray irradiation to induce room temperature metal-insulator transitions (MITs) in VO2 thin films grown on R-plane sapphire. The ability of soft x-rays to induce MIT in VO2 thin films is confirmed by photoemission spectroscopy and soft x-ray spectroscopy measurements. When irradiation was discontinued, the systems do not return to the insulating phase. Analysis of valence band photoemission spectra revealed that the density of states (DOSs) of the V 3d band increased with irradiation time, while the DOS of the O 2p band decreased. We use these results to propose a model in which the MIT is driven by oxygen desorption from thin films during irradiation.

The fabrication and visible-near-infrared optical modulation of vanadium dioxide/silicon dioxide composite photonic crystal structure

NASA Astrophysics Data System (ADS)

Liang, Jiran; Li, Peng; Song, Xiaolong; Zhou, Liwei

2017-12-01

We demonstrated a visible and near-infrared light tunable photonic nanostructure, which is composed of vanadium dioxide (VO2) thin film and silicon dioxide (SiO2) ordered nanosphere arrays. The vanadium films were sputtered on two-dimensional (2D) SiO2 sphere arrays. VO2 thin films were prepared by rapid thermal annealing (RTA) method with different oxygen flow rates. The close-packed VO2 shell formed a continuous surface, the composition of VO2 films in the structure changed when the oxygen flow rates increased. The 2D VO2/SiO2 composite photonic crystal structure exhibited transmittance trough tunability and near-infrared (NIR) transmittance modulation. When the oxygen flow rate increased from 3 slpm to 4 slpm, the largest transmittance trough can be regulated from 904 to 929 nm at low temperature, the transmittance troughs also appear blue shift when the VO2 phase changes from insulator to metal. The composite nanostructure based on VO2 films showed visible transmittance tunability, which would provide insights into the glass color changing in smart windows.

Equivalent circuit for VO{sub 2} phase change material film in reconfigurable frequency selective surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanphuang, Varittha; Ghalichechian, Nima; Nahar, Niru K.

We developed equivalent circuits of phase change materials based on vanadium dioxide (VO{sub 2}) thin films. These circuits are used to model VO{sub 2} thin films for reconfigurable frequency selective surfaces (FSSs). This is important as it provides a way for designing complex structures. A reconfigurable FSS filter using VO{sub 2} ON/OFF switches is designed demonstrating −60 dB isolation between the states. This filter is used to provide the transmission and reflection responses of the FSS in the frequency range of 0.1–0.6 THz. The comparison between equivalent circuit and full-wave simulation shows excellent agreement.

Switchable vanadium dioxide (VO2) metamaterials fabricated from tungsten doped vanadia-based colloidal nanocrystals

NASA Astrophysics Data System (ADS)

Paik, Taejong; Hong, Sung-Hoon; Gordon, Thomas; Gaulding, Ashley; Kagan, Cherie; Murray, Christopher

2013-03-01

We report the fabrication of thermochromic VO2-based metamaterials using solution-processable colloidal nanocrystals. Vanadium-based nanoparticles are prepared through a non-hydrolytic reaction, resulting in stable colloidal dispersions in solution. Thermochromic nanocrystalline VO2 thin-films are prepared via rapid thermal annealing of colloidal nanoparticles coated on a variety of substrates. Nanostructured VO2 can be patterned over large areas by nanoimprint lithography. Precise control of tungsten (W) doping concentration in colloidal nanoparticles enables tuning of the phase transition temperature of the nanocrystalline VO2 thin-films. W-doped VO2 films display a sharp temperature dependent phase transition, similar to the undoped VO2 film, but at lower temperatures tunable with the doping level. By sequential coating of doped VO2 with different doping concentrations, we fabricate ?smart? multi-layered VO2 films displaying multiple phase transition temperatures within a single structure, allowing for dynamic modulation of the metal-dielectric layered structure. The optical properties programmed into the layered structure are switchable with temperature, which provides additional degrees of freedom to design tunable optical metamaterials. This work is supported by the US Office of Naval Research Multidisciplinary University Research Initiative (MURI) program grant number ONR-N00014-10-1-0942.

Semiconductor to Metal Transition Characteristics of VO2/NiO Epitaxial Heterostructures Integrated with Si(100)

NASA Astrophysics Data System (ADS)

Molaei, Roya

The novel functionalities of Vanadium dioxide (VO2), such as, several orders of magnitude transition in resistivity and IR transmittance, provide the exciting opportunity for the development of next generation memory, sensor, and field-effect based devices. A critical issue in the development of practical devices based on metal oxides is the integration of high quality epitaxial oxide thin films with the existing silicon technology which is based on silicon (100) substrates. However, silicon is not suitable for epitaxial growth of oxides owing to its tendency to readily form an amorphous oxide layer or silicide at the film-substrate interface. The oxide films deposited directly on silicon exhibit poor crystallinity and are not suitable for device applications. To overcome this challenge, appropriate substrate templates must be developed for the growth of oxide thin films on silicon substrates. The primary objective of this dissertation was to develop an integration methodology of VO2 with Si (100) substrates so they could be used in "smart" sensor type of devices along with other multifunctional devices on the same silicon chip. This was achieved by using a NiO/c- YSZ template layer deposited in situ. It will be shown that if the deposition conditions are controlled properly. This approach was used to integrate VO 2 thin films with Si (100) substrates using pulsed laser deposition (PLD) technique. The deposition methodology of integrating VO2 thin films on silicon using various other template layers will also be discussed. Detailed epitaxial relationship of NiO/c-YSZ/Si(100) heterostructures as a template to growth of VO2 as well as were studied. We also were able to create a p-n junction within a single NiO epilayer through subsequent nanosecond laser annealing, as well as established a structure-property correlation in NiO/c-YSZ/Si(100) thin film epitaxial heterostructures with especial emphasis on the stoichiometry and crystallographic characteristics. NiO/c-YSZ/Si(100) heterostructures were used as template to grow fully relaxed VO2 thin films. The detailed x-ray diffraction, transmission electron microscopy (TEM), electrical characterization results for the deposited films will be presented. In the framework on domain matching epitaxy, epitaxial growth of VO2 (tetragonal crystal structure at growth temperature) on NiO has been explained. Our detailed phi-scan X-ray diffraction measurements corroborate our understanding of the epitaxial growth and in-plane atomic arrangements at the interface. It was observed that the transition characteristics (sharpness, over which electrical property changes are completed, amplitude, transition temperature, and hysteresis) are a strong function of microstructure, strain, and stoichiometry. We have shown that by the choosing the right template layer, strain in the VO2 thin films can be fully relaxed and near-bulk VO2 transition temperatures can be achieved. Finally, I will present my research work on modification of semiconductor-to-metal transition characteristics and effect on room temperature magnetic properties of VO2 thin films upon laser annealing. While the microstructure (epitaxy, crystalline quality etc.) and phase were preserved, we envisage these changes to occur as a result of introduction of oxygen vacancies upon laser treatment.

Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment

NASA Astrophysics Data System (ADS)

Molaei, R.; Bayati, R.; Nori, S.; Kumar, D.; Prater, J. T.; Narayan, J.

2013-12-01

VO2(010)/NiO(111) epitaxial heterostructures were integrated with Si(100) substrates using a cubic yttria-stabilized zirconia (c-YSZ) buffer. The epitaxial alignment across the interfaces was determined to be VO2(010)‖NiO(111)‖c-YSZ(001)‖Si(001) and VO2[100]‖NiO⟨110⟩‖c-YSZ⟨100⟩‖Si⟨100⟩. The samples were subsequently treated by a single shot of a nanosecond KrF excimer laser. Pristine as-deposited film showed diamagnetic behavior, while laser annealed sample exhibited ferromagnetic behavior. The population of majority charge carriers (e-) and electrical conductivity increased by about two orders of magnitude following laser annealing. These observations are attributed to the introduction of oxygen vacancies into the VO2 thin films and the formation of V3+ defects.

Elevated transition temperature in Ge doped VO2 thin films

NASA Astrophysics Data System (ADS)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

PubMed Central

Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

2016-01-01

Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films. PMID:26975328

Roles of strain and domain boundaries on the phase transition stability of VO2 thin films

NASA Astrophysics Data System (ADS)

Jian, Jie; Chen, Aiping; Chen, Youxing; Zhang, Xinghang; Wang, Haiyan

2017-10-01

The fundamental phase transition mechanism and the stability of the semiconductor-to-metal phase transition properties during multiple thermal cycles have been investigated on epitaxial vanadium dioxide (VO2) thin films via both ex situ heating and in situ heating by transmission electron microscopy (TEM). VO2 thin films were deposited on c-cut sapphire substrates by pulsed laser deposition. Ex situ studies show the broadening of transition sharpness (ΔT) and the width of thermal hysteresis (ΔH) after 60 cycles. In situ TEM heating studies reveal that during thermal cycles, large strain was accumulated around the domain boundaries, which was correlated with the phase transition induced lattice constant change and the thermal expansion. It suggests that the degradation of domain boundary structures in the VO2 films not only caused the transition property reduction (e.g., the decrease in ΔT and ΔH) but also played an important role in preventing the film from fracture during thermal cycles.

Strain Effects in Epitaxial VO2 Thin Films on Columnar Buffer-Layer TiO2/Al2O3 Virtual Substrates.

PubMed

Breckenfeld, Eric; Kim, Heungsoo; Burgess, Katherine; Charipar, Nicholas; Cheng, Shu-Fan; Stroud, Rhonda; Piqué, Alberto

2017-01-18

Epitaxial VO 2 /TiO 2 thin film heterostructures were grown on (100) (m-cut) Al 2 O 3 substrates via pulsed laser deposition. We have demonstrated the ability to reduce the semiconductor-metal transition (SMT) temperature of VO 2 to ∼44 °C while retaining a 4 order of magnitude SMT using the TiO 2 buffer layer. A combination of electrical transport and X-ray diffraction reciprocal space mapping studies help examine the specific strain states of VO 2 /TiO 2 /Al 2 O 3 heterostructures as a function of TiO 2 film growth temperatures. Atomic force microscopy and transmission electron microscopy analyses show that the columnar microstructure present in TiO 2 buffer films is responsible for the partially strained VO 2 film behavior and subsequently favorable transport characteristics with a lower SMT temperature. Such findings are of crucial importance for both the technological implementation of the VO 2 system, where reduction of its SMT temperature is widely sought, as well as the broader complex oxide community, where greater understanding of the evolution of microstructure, strain, and functional properties is a high priority.

Enhanced luminous transmittance of thermochromic VO2 thin film patterned by SiO2 nanospheres

NASA Astrophysics Data System (ADS)

Zhou, Liwei; Liang, Jiran; Hu, Ming; Li, Peng; Song, Xiaolong; Zhao, Yirui; Qiang, Xiaoyong

2017-05-01

In this study, an ordered SiO2 nanosphere array coated with vanadium dioxide (VO2) has been fabricated to enhance transmittance with the potential application as an energy-efficient coating in the field of smart windows. SiO2 arrays were formed using the methods of self-assembly, and VO2 thin films were prepared by rapid thermal annealing (RTA) of sputtered vanadium films. VO2@SiO2 arrays were characterized by scanning electron microscopy, X-ray diffraction, a four-point probe, and UV-vis-NIR spectrophotometry. Compared with the planar films, the films deposited on 300 nm diameter SiO2 nanospheres can offer approximately 18% enhancement of luminous transmission (Tlum) because the diameter is smaller than the given wavelength and the protuberance of the surface array behaves as a gradation of refractive index producing antireflection. The solar regulation efficiency was not much deteriorated.

Fundamental Studies on Confinement Effects in Ionic Conduction and Inversion Layers in 2-D Single Crystal Free Standing Oxide Membranes

DTIC Science & Technology

2014-02-14

properties of VO2 films and membranes and compare the results with annealing VO2 films and membranes in hydrogen to provide insight into the doping...2-dimensional free standing membrane with correlated oxides may also lead to new insights into mesoscopic electronic phenomena. Vanadium oxide ( VO2 ...well as for potential applications in switching devices. While studies have been conducted on thin films, hybrid layers of VO2 supported on other

Thermal aging effect of vanadyl acetylacetonate precursor for deposition of VO{sub 2} thin films with thermochromic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Jung-Hoon; Nam, Sang-Hun; Kim, Donguk

Highlights: • 7 day aged VO(acac){sub 2} sol shows enhanced adhesivity on the SiO{sub 2} compared with non-aged sol. • The aging process has significantly affected the morphologies of VO{sub 2} films. • From the FT-IR spectra, thermal aging process provides the deformation of precursor. • The metal insulator transition (MIT) efficiency (ΔT{sub at2000} {sub nm}) reached a maximum value of 51% at 7 day aging. • Thermal aging process could shorten the aging time of sol solution. - Abstract: Thermochromic properties of vanadium dioxide (VO{sub 2}) have been studied extensively due to their IR reflection applications in energy smartmore » windows. In this paper, we studied the optical switching property of VO{sub 2} thin film, depending on the thermal aging time of the vanadyl acetylacetonate (VO(acac){sub 2}) precursor. We found the alteration of the IR spectra of the precursor by tuning the aging time as well as heat treatments of the precursor. An aging effect of vanadium precursor directly affects the morphologies, optical switching property and crystallinity of VO{sub 2} films. The optimum condition was achieved at the 7 day aging time with metal insulator transition (MIT) efficiency of 50%.« less

VO2 nanoparticles on edge orientated graphene foam for high rate lithium ion batteries and supercapacitors

NASA Astrophysics Data System (ADS)

Ren, Guofeng; Zhang, Ruibo; Fan, Zhaoyang

2018-05-01

With the fully exposed graphene edges, high conductivity and large surface area, edge oriented graphene foam (EOGF), prepared by deposition of perpendicular graphene network encircling the struts of Ni foam, is a superior scaffold to support active materials for electrochemical applications. With VO2 as an example, EOGF loaded VO2 nanoparticle (VO2/EOGF) electrode has high rate performance as cathode in lithium ion batteries (LIBs). In addition to the Li+ intercalation into the lattice, contribution of non-diffusion-limited pseudocapacitance to the capacity is prominent at high rates. VO2/EOGF based supercapacitor also exhibits fast response, with a characteristic frequency of 15 Hz when the phase angle reaches -45°, or a relaxation time constant of 66.7 ms. These results suggest the promising potential of EOGF as a scaffold in supporting active nanomaterials for electrochemical energy storage and other applications.

A metal-insulator transition study of VO 2 thin films grown on sapphire substrates

DOE PAGES

Yu, Shifeng; Wang, Shuyu; Lu, Ming; ...

2017-12-15

In this paper, vanadium thin films were deposited on sapphire substrates by DC magnetron sputtering and then oxidized in a tube furnace filled with oxygen under different temperatures and oxygen flow rates. The significant influence of the oxygen flow rate and oxidation temperature on the electrical and structural properties of the vanadium oxide thin films were investigated systematically. It shows the pure vanadium dioxide (VO 2) state can only be obtained in a very narrow temperature and oxygen flow rate range. The resistivity change during the metal-insulator transition varies from 0.2 to 4 orders of magnitude depending on the oxidationmore » condition. Large thermal hysteresis during the metal-insulator phase transition was observed during the transition compared to the results in literature. Proper oxidation conditions can significantly reduce the thermal hysteresis. Finally, the fabricated VO 2 thin films showed the potential to be applied in the development of electrical sensors and other smart devices.« less

Defect-mediated room temperature ferromagnetism in vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Yang, Tsung-Han; Nori, Sudhakar; Zhou, Honghui; Narayan, Jagdish

2009-09-01

High quality epitaxial undoped vanadium oxide (VO2) thin films on c-plane sapphire (0001) substrate have been grown using pulsed laser deposition technique. The as-grown films exhibited excellent structural and transport properties without requiring further annealing treatments for these oxygen-deficient oxide films. The epitaxial growth has been achieved via domain matching epitaxy, where matching of integral multiples of planes occurs across the film-substrate interface. The magnetic properties of vanadium oxide (VO2) films investigated at different temperatures in the range of 10-360 K showed significant magnetic hysteresis as well as saturation of the magnetic moment. The origin of ferromagnetic properties with an estimated Curie temperature above 500 K is discussed in the absence of magnetic impurities in VO2 thin films as determined by x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy.

Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

NASA Astrophysics Data System (ADS)

Zhu, Nai-Wei; Hu, Ming; Xia, Xiao-Xu; Wei, Xiao-Ying; Liang, Ji-Ran

2014-04-01

The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-°C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.

Effects of gamma irradiations on reactive pulsed laser deposited vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Madiba, I. G.; Émond, N.; Chaker, M.; Thema, F. T.; Tadadjeu, S. I.; Muller, U.; Zolliker, P.; Braun, A.; Kotsedi, L.; Maaza, M.

2017-07-01

Vanadium oxide films are considered suitable coatings for various applications such as thermal protective coating of small spacecrafts because of their thermochromic properties. While in outer space, such coating will be exposed to cosmic radiations which include γ-rays. To study the effect of these γ-rays on the coating properties, we have deposited vanadium dioxide (VO2) films on silicon substrates and subjected them to extensive γ-irradiations with typical doses encountered in space missions. The prevalent crystallographic phase after irradiation remains the monoclinic VO2 phase but the films preferential orientation shifts to lower angles due to the presence of disordered regions caused by radiations. Raman spectroscopy measurements also evidences that the VO2 structure is slightly affected by gamma irradiation. Indeed, increasing the gamma rays dose locally alters the crystalline and electronic structures of the films by modifying the V-V inter-dimer distance, which in turns favours the presence of the VO2 metallic phase. From the XPS measurements of V2p and O1s core level spectra, an oxidation of vanadium from V4+ towards V5+ is revealed. The data also reveal a hydroxylation upon irradiation which is corroborated by the vanishing of a low oxidation state peak near the Fermi energy in the valence band. Our observations suggest that gamma radiations induce the formation of Frenkel pairs. Moreover, THz transmission measurements show that the long range structure of VO2 remains intact after irradiation whilst the electrical measurements evidence that the coating resistivity decreases with gamma irradiation and that their transition temperature is slightly reduced for high gamma ray doses. Even though gamma rays are only one of the sources of radiations that are encountered in space environment, these results are very promising with regards to the potential of integration of such VO2 films as a protective coating for spacecrafts.

Self-Assembled Multilayer Structure and Enhanced Thermochromic Performance of Spinodally Decomposed TiO2-VO2 Thin Film.

PubMed

Sun, Guangyao; Zhou, Huaijuan; Cao, Xun; Li, Rong; Tazawa, Masato; Okada, Masahisa; Jin, Ping

2016-03-23

Composite films of VO2-TiO2 were deposited on sapphire (11-20) substrate by cosputtering method. Self-assembled well-ordered multilayer structure with alternating Ti- and V-rich epitaxial thin layer was obtained by thermal annealing via a spinodal decomposition mechanism. The structured thermochromic films demonstrate superior optical modulation upon phase transition, with significantly reduced transition temperature. The results provide a facile and novel approach to fabricate smart structures with excellent performance.

Atomic layer deposition of VO2 films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor

NASA Astrophysics Data System (ADS)

Lv, Xinrui; Cao, Yunzhen; Yan, Lu; Li, Ying; Song, Lixin

2017-02-01

VO2 thin films have been grown on Si(100) (VO2/Si) and fused silica substrates (VO2/SiO2) by atomic layer deposition (ALD) using tetrakis-dimethyl-amino vanadium (IV) (TDMAV) as a novel vanadium precursor and water as reactant gas. The quartz crystal microbalance (QCM) measurement was performed to study the ALD process of VO2 thin film deposition, and a constant growth rate of about 0.95 Å/cycle was obtained at the temperature range of 150-200 °C. XRD measurement was performed to study the influence of deposition temperature and post-annealing condition on the crystallization of VO2 films, which indicated that the films deposited between 150 and 200 °C showed well crystallinity after annealing at 475 °C for 100 min in Ar atmosphere. XPS measurement verified that the vanadium oxidation state was 4+ for both as-deposited film and post-annealed VO2/Si film. AFM was applied to study the surface morphology of VO2/Si films, which showed a dense polycrystalline film with roughness of about 1 nm. The resistance of VO2/Si films deposited between 150 °C and 200 °C as a function of temperature showed similar semiconductor-to-metal transition (SMT) characters with the transition temperature for heating branch (Tc,h) of about 72 °C, a hysteresis width of about 10 °C and the resistance change of two orders of magnitude. The increase of Tc,h compared with the bulk VO2 (68 °C) may be attributed to the tensile stress along the c-axis in the film. Transmittance measurement of VO2/SiO2 films showed typical thermochromic property with a NIR switching efficiency of above 50% at 2 μm across the transition.

Sputtering Deposition of Sandwich-Structured V2O5/Metal (V, W)/V2O5 Multilayers for the Preparation of High-Performance Thermally Sensitive VO2 Thin Films with Selectivity of VO2 (B) and VO2 (M) Polymorph.

PubMed

Liu, Hengwu; Wan, Dongyun; Ishaq, Ahmad; Chen, Lanli; Guo, Beibei; Shi, Siqi; Luo, Hongjie; Gao, Yanfeng

2016-03-01

For specific application to an uncooled infrared detector, VO2 thin films should have a series of characteristics including purposefully chosen polymorphs, accurate stoichiometry, phase stabilization, a high temperature-coefficient of resistance (TCR), and suitable square-resistance. This work reports controllable preparation of high-performance VO2 films via post annealing of a sandwich-structured V2O5/metal (V, W)/V2O5 multilayer precursor, which was deposited by RF magnetron sputtering. This sandwich structure can dynamically regulate oxygen contents and doping element levels in the films, enabling us to achieve accurate regulation of stoichiometry and polymorphs. The precursor films undergo a B to M phase transition depending on the quantity of the metal layers. At the thickness of the metal layer below a limitation, the resulting film after heat treatment was VO2 (B), and above the limitation, the product was VO2 (M). The optical modulation of the VO2 (M) in the near-infrared region can be tuned from 1.2 to 39.8% (ΔT2000 nm). TCR values can range from -1.89 to -4.29%/K and the square-resistances at room temperature (R0) from 69.68 to 12.63 kΩ. The simplicity in phase regulation of the present method and the superior optical and electrical properties of the films may allow its wide applications in thermo-opto-electro sensing devices.

Flexible thermochromic window based on hybridized VO2/graphene.

PubMed

Kim, Hyeongkeun; Kim, Yena; Kim, Keun Soo; Jeong, Hu Young; Jang, A-Rang; Han, Seung Ho; Yoon, Dae Ho; Suh, Kwang S; Shin, Hyeon Suk; Kim, TaeYoung; Yang, Woo Seok

2013-07-23

Large-scale integration of vanadium dioxide (VO2) on mechanically flexible substrates is critical to the realization of flexible smart window films that can respond to environmental temperatures to modulate light transmittance. Until now, the formation of highly crystalline and stoichiometric VO2 on flexible substrate has not been demonstrated due to the high-temperature condition for VO2 growth. Here, we demonstrate a VO2-based thermochromic film with unprecedented mechanical flexibility by employing graphene as a versatile platform for VO2. The graphene effectively functions as an atomically thin, flexible, yet robust support which enables the formation of stoichiometric VO2 crystals with temperature-driven phase transition characteristics. The graphene-supported VO2 was capable of being transferred to a plastic substrate, forming a new type of flexible thermochromic film. The flexible VO2 films were then integrated into the mock-up house, exhibiting its efficient operation to reduce the in-house temperature under infrared irradiation. These results provide important progress for the fabrication of flexible thermochromic films for energy-saving windows.

Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma

NASA Astrophysics Data System (ADS)

Ham, Yong-Hyun; Efremov, Alexander; Min, Nam-Ki; Lee, Hyun Woo; Yun, Sun Jin; Kwon, Kwang-Ho

2009-08-01

A study on both etching characteristics and mechanism of VO2 thin films in the Cl2/Ar inductively coupled plasma was carried. The variable parameters were gas pressure (4-10 mTorr) and input power (400-700 W) at fixed bias power of 150 W and initial mixture composition of 25% Cl2 + 75% Ar. It was found that an increase in both gas pressure and input power results in increasing VO2 etch rate while the etch selectivity over photoresist keeps a near to constant values. Plasma diagnostics by Langmuir probes and zero-dimensional plasma model provided the data on plasma parameters, steady-state densities and fluxes of active species on the etched surface. The model-based analysis of the etch mechanism showed that, for the given ranges of operating conditions, the VO2 etch kinetics corresponds to the transitional regime of ion-assisted chemical reaction and is influenced by both neutral and ion fluxes with a higher sensitivity to the neutral flux.

Supercritical temperature synthesis of fluorine-doped VO2(M) nanoparticle with improved thermochromic property

NASA Astrophysics Data System (ADS)

Riapanitra, Anung; Asakura, Yusuke; Cao, Wenbin; Noda, Yasuto; Yin, Shu

2018-06-01

Fluorine-doped VO2(M) nanoparticles have been successfully synthesized using the hydrothermal method at a supercritical temperature of 490 °C. The pristine VO2(M) has the critical phase transformation temperature of 64 °C. The morphology and homogeneity of the monoclinic structure VO2(M) were adopted by the fluorine-doped system. The obtained particle size of the samples is smaller at the higher concentration of anion doping. The best reduction of critical temperature was achieved by fluorine doping of 0.13% up to 48 °C. The thin films of the fluorine-doped VO2(M) showed pronounced thermochromic property and therefore are suitable for smart window applications.

Localized surface plasmon resonance modulation of totally encapsulated VO2/Au/VO2 composite structure

NASA Astrophysics Data System (ADS)

Liang, Jiran; Guo, Jinbang; Zhao, Yirui; Zhang, Ying; Su, Tianyu

2018-07-01

We design and fabricate a totally encapsulated VO2/Au/VO2 composite structure which is aimed to improve the tunability of the localized surface plasmon resonance (LSPR) peak. In this work, the structure will ensure all the Au NPs’ resonant electric field area is filled with VO2. The modulation range of the totally encapsulated structure is larger than that of the semi-coated structure. To further improve the modulation range, we also explore the VO2 thickness dependence of the structure’s LSPR modulation. With the increase of the top layer VO2 thin film thickness, the modulation range becomes larger. When the thickness is about 80 nm, the absorption peak achieves a largest shift of 112 nm. FDTD solution and equivalent model of series capacitor are used to explain the phenomenon. These results will contribute to the area of metamaterial electromagnetic wave absorber and other fields.

Localized surface plasmon resonance modulation of totally encapsulated VO2/Au/VO2 composite structure.

PubMed

Liang, Jiran; Guo, Jinbang; Zhao, Yirui; Zhang, Ying; Su, Tianyu

2018-07-06

We design and fabricate a totally encapsulated VO 2 /Au/VO 2 composite structure which is aimed to improve the tunability of the localized surface plasmon resonance (LSPR) peak. In this work, the structure will ensure all the Au NPs' resonant electric field area is filled with VO 2 . The modulation range of the totally encapsulated structure is larger than that of the semi-coated structure. To further improve the modulation range, we also explore the VO 2 thickness dependence of the structure's LSPR modulation. With the increase of the top layer VO 2 thin film thickness, the modulation range becomes larger. When the thickness is about 80 nm, the absorption peak achieves a largest shift of 112 nm. FDTD solution and equivalent model of series capacitor are used to explain the phenomenon. These results will contribute to the area of metamaterial electromagnetic wave absorber and other fields.

An Exploration and Optimization of the Metal Insulator Transition in Vanadium Dioxide Thin Films

DTIC Science & Technology

2009-12-02

Executive summary Vanadium dioxide ( VO2 ) is an archetypal strongly correlated oxide and could offer many opportunities for new paradigms of information...experimental understanding of the metal-insulator transition in VO2 and explored the various ways to control the transition temperature and hysteresis...Beyond attempts to understand the strong correlation phenomena in VO2 , we hope to demonstrate a phase transition switch based on the electrically

Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation

NASA Astrophysics Data System (ADS)

Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

2016-02-01

Compared to state-of-the-art modulation techniques, protonation is the most ideal to control the electrical and optical properties of transition metal oxides (TMOs) due to its intrinsic non-volatile operation. However, the protonation of TMOs is not typically utilized for solid-state devices because of imperative high-temperature annealing treatment in hydrogen source. Although one solution for room temperature (RT) protonation of TMOs is liquid-phase electrochemistry, it is unsuited for practical purposes due to liquid-leakage problem. Herein we demonstrate solid-state RT-protonation of vanadium dioxide (VO2), which is a well-known thermochromic TMO. We fabricated the three terminal thin-film-transistor structure on an insulating VO2 film using a water-infiltrated nanoporous glass, which serves as a solid electrolyte. For gate voltage application, water electrolysis and protonation/deprotonation of VO2 film surface occurred, leading to reversible metal-insulator phase conversion of ~11-nm-thick VO2 layer. The protonation was clearly accompanied by the structural change from an insulating monoclinic to a metallic tetragonal phase. Present results offer a new route for the development of electro-optically active solid-state devices with TMO materials by engineering RT protonation.

Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films

NASA Astrophysics Data System (ADS)

Abreu, Elsa; Gilbert Corder, Stephanie N.; Yun, Sun Jin; Wang, Siming; Ramírez, Juan Gabriel; West, Kevin; Zhang, Jingdi; Kittiwatanakul, Salinporn; Schuller, Ivan K.; Lu, Jiwei; Wolf, Stuart A.; Kim, Hyun-Tak; Liu, Mengkun; Averitt, Richard D.

2017-09-01

Ultrafast optical pump-optical probe and optical pump-terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3 ) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the spectral weight oscillations generated by the photoinduced longitudinal acoustic modulation, reveals the strong electron-phonon coupling that exists in both materials. The low-energy Drude response of V2O3 appears more amenable than VO2 to ultrafast strain control. Additionally, our results provide a measurement of the temperature dependence of the sound velocity in both systems, revealing a four- to fivefold increase in VO2 and a three- to fivefold increase in V2O3 across the insulator-to-metal phase transition. Our data also confirm observations of strong damping and phonon anharmonicity in the metallic phase of VO2, and suggest that a similar phenomenon might be at play in the metallic phase of V2O3 . More generally, our simple table-top approach provides relevant and detailed information about dynamical lattice properties of vanadium oxides, paving the way to similar studies in other complex materials.

Reduction of V2O5 thin films deposited by aqueous sol-gel method to VO2(B) and investigation of its photocatalytic activity

NASA Astrophysics Data System (ADS)

Monfort, Olivier; Roch, Tomas; Satrapinskyy, Leonid; Gregor, Maros; Plecenik, Tomas; Plecenik, Andrej; Plesch, Gustav

2014-12-01

A way of preparation of VO2(B) thin films by reduction of V2O5 films synthesized from an aqueous sol-gel system has been developed and photocatalytic properties of the obtained films were studied. The reduction was performed by annealing of the V2O5 film in vacuum as well as in H2/Ar atmosphere, which was followed by temperature dependent XRD. It has been shown that the reduction is influenced by the layered-structure of the vanadium oxides. It is a two-step process, where the mixed-valence vanadium oxide V4O9 is first formed before reaching the VO2(B) phase. The film microstructure was characterized by SEM and AFM and the valence states of vanadium in VO2(B) films were evaluated by XPS. The VO2(B) polymorph shows an energy band-gap around 2.8 eV and it exhibits photocatalytic properties. It was measured by following the degradation of rhodamine B under UVA as well as metalhalogenide lamp irradiation, which has similar spectral distribution as natural sunlight. The VO2(B) films show distinct photoactivities under both lamps, although they were found to be more active under the UVA irradiation. The film annealed under reducing hydrogen atmosphere, which exhibits higher granularity and surface roughness, shows higher photoactivity than the vacuum-annealed film.

Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films.

PubMed

Mihailescu, Cristian N; Symeou, Elli; Svoukis, Efthymios; Negrea, Raluca F; Ghica, Corneliu; Teodorescu, Valentin; Tanase, Liviu C; Negrila, Catalin; Giapintzakis, John

2018-04-25

Controlling the semiconductor-to-metal transition temperature in epitaxial VO 2 thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects of growth temperature on the structure, chemical composition, interface coherency and electrical characteristics of rutile VO 2 epitaxial thin films grown on TiO 2 substrates are investigated. It is hereby deduced that the transition temperature is lower than the bulk value of 340 K. However, it is found to approach this value as a function of increased growth temperature even though it is accompanied by a contraction along the V 4+ -V 4+ bond direction, the crystallographic c-axis lattice parameter. Additionally, it is demonstrated that films grown at low substrate temperatures exhibit a relaxed state and a strongly reduced transition temperature. It is suggested that, besides thermal and epitaxial strain, growth-induced defects may strongly affect the electronic phase transition. The results of this work reveal the difficulty in extracting the intrinsic material response to strain, when the exact contribution of all strain sources cannot be effectively determined. The findings also bear implications on the limitations in obtaining the recently predicted novel semi-Dirac point phase in VO 2 /TiO 2 multilayer structures.

Effects of postdeposition annealing on the metal-insulator transition of VO2-x thin films prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Liu, Shiu-Jen; Su, Yu-Tai; Hsieh, Juang-Hsin

2014-03-01

We report the fabrication of textured VO2-x films on c-cut sapphire substrates by postdeposition annealing of V2O3 films prepared by RF magnetron sputtering using V2O3 as the target. Although the prepared VO2-x films are expected to be oxygen-deficient, overoxidation on the film surface was revealed by X-ray photoelectron spectroscopy. The metal-insulator transition (MIT) characteristics of the VO2-x films were investigated. MIT parameters including the transition temperature, transition sharpness, and hysteresis width of the VO2-x films were manipulated by varying the oxygen pressure during postdeposition annealing. The suppression of optical transmittance in the near-infrared region was observed by increasing the temperature through the MIT.

Template-free synthesis of vanadium oxides nanobelt arrays as high-rate cathode materials for lithium ion batteries

NASA Astrophysics Data System (ADS)

Qin, Mulan; Liang, Qiang; Pan, Anqiang; Liang, Shuquan; Zhang, Qing; Tang, Yan; Tan, Xiaoping

2014-12-01

A facile hydrothermal route has been developed to fabricate the metastable VO2 (B) ultra-thin nanobelt arrays, which can be converted into V2O5 porous nanobelt arrays after calcinating VO2 (B) in air at 400 °C for 1 h. The influence of hydrothermal time to the crystallinity and morphology of the VO2 phase has been studied. A possible mechanism for the formation of VO2 nanobelt arrays has been proposed in this paper. As a cathode material for lithium ion batteries, the V2O5 nanobelt arrays show excellent rate capability and cycling stability. An initial discharge capacity of 142 mA h g-1 can be delivered at a current density of 50 mA g-1 with almost no capacity fading after 100 cycles. Even at a current density of 1000 mA g-1, they still exhibit the capacity of 130 mA h g-1 and superior capacity retention capability. The excellent electrochemical properties are attributed to the ultra-thin thickness and the porous structures of the nanobelts.

Enhanced electrochemical performance of orientated VO2(B) raft-like nanobelt arrays through direct lithiation for lithium ion batteries.

PubMed

Liu, Liang; Liu, Qiang; Zhao, Wen; Li, Guochun; Wang, Limei; Shi, Weidong; Chen, Long

2017-02-10

Lithiation modification of VO 2 (B) has been carried out by a facile hydrothermal process, and the compact and locally ordered VO 2 (B) raft-like nanobelt arrays have been prepared. The synthesis route provides a new approach to elaborate a VO 2 (B) nanostructure under a mild environment condition. It is found that the growth mechanism of VO 2 (B) raft-like nanobelt arrays is different from the traditional nucleation-growth process. A novel chemical lithiating-exfoliating-splitting model is proposed. Compared with the bulk counterpart, the lithiated VO 2 (B) raft-like nanobelt arrays as cathodes exhibit a higher discharge capacity and an enhanced high-rate performance owing to their increased structural anisotropy and decreased polarization. This work indicates that VO 2 (B) raft-like nanobelt arrays have great potential applications as cathode materials for lithium ion batteries.

Enhanced electrochemical performance of orientated VO2(B) raft-like nanobelt arrays through direct lithiation for lithium ion batteries

NASA Astrophysics Data System (ADS)

Liu, Liang; Liu, Qiang; Zhao, Wen; Li, Guochun; Wang, Limei; Shi, Weidong; Chen, Long

2017-02-01

Lithiation modification of VO2(B) has been carried out by a facile hydrothermal process, and the compact and locally ordered VO2(B) raft-like nanobelt arrays have been prepared. The synthesis route provides a new approach to elaborate a VO2(B) nanostructure under a mild environment condition. It is found that the growth mechanism of VO2(B) raft-like nanobelt arrays is different from the traditional nucleation-growth process. A novel chemical lithiating-exfoliating-splitting model is proposed. Compared with the bulk counterpart, the lithiated VO2(B) raft-like nanobelt arrays as cathodes exhibit a higher discharge capacity and an enhanced high-rate performance owing to their increased structural anisotropy and decreased polarization. This work indicates that VO2(B) raft-like nanobelt arrays have great potential applications as cathode materials for lithium ion batteries.

Coherently coupled ZnO and VO2 interface studied by photoluminescence and electrical transport across a phase transition

NASA Astrophysics Data System (ADS)

Srivastava, Amar; Herng, T. S.; Saha, Surajit; Nina, Bao; Annadi, A.; Naomi, N.; Liu, Z. Q.; Dhar, S.; Ariando; Ding, J.; Venkatesan, T.

2012-06-01

We have investigated the photoluminescence and electrical properties of a coherently coupled interface consisting of a ZnO layer grown on top of an oriented VO2 layer on sapphire across the phase transition of VO2. The band edge and defect luminescence of the ZnO overlayer exhibit hysteresis in opposite directions induced by the phase transition of VO2. Concomitantly the phase transition of VO2 was seen to induce defects in the ZnO layer. Such coherently coupled interfaces could be of use in characterizing the stability of a variety of interfaces in situ and also for novel device application.

Tunable VO{sub 2}/Au hyperbolic metamaterial

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prayakarao, S.; Noginov, M. A., E-mail: mnoginov@nsu.edu; Mendoza, B.

2016-08-08

Vanadium dioxide (VO{sub 2}) is known to have a semiconductor-to-metal phase transition at ∼68 °C. Therefore, it can be used as a tunable component of an active metamaterial. The lamellar metamaterial studied in this work is composed of subwavelength VO{sub 2} and Au layers and is designed to undergo a temperature controlled transition from the optical hyperbolic phase to the metallic phase. VO{sub 2} films and VO{sub 2}/Au lamellar metamaterial stacks have been fabricated and studied in electrical conductivity and optical (transmission and reflection) experiments. The observed temperature-dependent changes in the reflection and transmission spectra of the metamaterials and VO{sub 2}more » thin films are in a good qualitative agreement with theoretical predictions. The demonstrated optical hyperbolic-to-metallic phase transition is a unique physical phenomenon with the potential to enable advanced control of light-matter interactions.« less

Tuning phase transition temperature of VO2 thin films by annealing atmosphere

NASA Astrophysics Data System (ADS)

Liu, Xingxing; Wang, Shao-Wei; Chen, Feiliang; Yu, Liming; Chen, Xiaoshuang

2015-07-01

A simple new way to tune the optical phase transition temperature of VO2 films was proposed by only controlling the pressure of oxygen during the annealing process. Vanadium films were deposited on glass by a large-scale magnetron sputtering coating system and then annealed in appropriate oxygen atmosphere to form the VO2 films. The infrared transmission change (at 2400 nm) is as high as 58% for the VO2 thin film on the glass substrate, which is very good for tuning infrared radiation and energy saving as smart windows. The phase transition temperature of the films can be easily tuned from an intrinsic temperature to 44.7 °C and 40.2 °C on glass and sapphire by annealing oxygen pressure, respectively. The mechanism is: V3+ ions form in the film when under anaerobic conditions, which can interrupt the V4+ chain and reduce the phase transition temperature. The existence of V3+ ions has been observed by x-ray photoelectron spectroscopy (XPS) experiments as proof.

Thermal hysteresis measurement of the VO2 emissivity and its application in thermal rectification.

PubMed

Gomez-Heredia, C L; Ramirez-Rincon, J A; Ordonez-Miranda, J; Ares, O; Alvarado-Gil, J J; Champeaux, C; Dumas-Bouchiat, F; Ezzahri, Y; Joulain, K

2018-05-31

Hysteresis loops in the emissivity of VO 2 thin films grown on sapphire and silicon substrates by a pulsed laser deposition process are experimentally measured through the thermal-wave resonant cavity technique. Remarkable variations of about 43% are observed in the emissivity of both VO 2 films, within their insulator-to-metal and metal-to-insulator transitions. It is shown that: i) The principal hysteresis width (maximum slope) in the VO 2 emissivity of the VO 2  + silicon sample is around 3 times higher (lower) than the corresponding one of the VO 2  + sapphire sample. VO 2 synthesized on silicon thus exhibits a wider principal hysteresis loop with slower MIT than VO 2 on sapphire, as a result of the significant differences on the VO 2 film microstructures induced by the silicon or sapphire substrates. ii) The hysteresis width along with the rate of change of the VO 2 emissivity in a VO 2  + substrate sample can be tuned with its secondary hysteresis loop. iii) VO 2 samples can be used to build a radiative thermal diode able to operate with a rectification factor as high as 87%, when the temperature difference of its two terminals is around 17 °C. This record-breaking rectification constitutes the highest one reported in literature, for a relatively small temperature change of diode terminals.

Electronic structure of HxVO2 probed with in-situ spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Kim, So Yeun; Sandilands, Luke J.; Kang, Taedong; Son, Jaeseok; Sohn, C. H.; Yoon, Hyojin; Son, Junwoo; Moon, S. J.; Noh, T. W.

Vanadium dioxide (VO2) undergoes a metal-to-insulator transition (MIT) near 340K. Despite extensive studies on this material, the role of electron-electron correlation and electron-lattice interactions in driving this MIT is still under debate. Recently, it was demonstrated that hydrogen can be reversibly absorbed into VO2 thin film without destroying the lattice framework. This H-doping allows systematic control of the electron density and lattice structure which in turn leads to a insulator (VO2) - metal (HxVO2) - insulator (HVO2) phase modulation. To better understand the phase modulation of HxVO2, we used in-situ spectroscopic ellipsometry to monitor the electronic structure during the hydrogenization process, i.e. we measured the optical conductivity of HxVO2 while varying x. Starting in the high temperature rutile metallic phase of VO2, we observed a large change in the electronic structure upon annealing in H gas at 370K: the low energy conductivity is continuously suppressed, consistent with reported DC resistivity data, while the conductivity peaks at high energy show strong changes in energy and spectral weight. The implications of our results for the MIT in HxVO2 will be discussed.

Electron and hole dynamics in the electronic and structural phase transitions of VO2

NASA Astrophysics Data System (ADS)

Haglund, Richard

2015-03-01

The ultrafast, optically induced insulator-to-metal transition (IMT) and the associated structural phase transition (SPT) in vanadium dioxide (VO2) have been studied for over a decade. However, only recently have effects due to the combined presence of electron-hole pairs and injected electrons been observed. Here we compare and contrast IMT dynamics when both hot electrons and optically excited electron-hole pairs are involved, in (1) thin films of VO2 overlaid by a thin gold foil, in which hot electrons are generated by 1.5 eV photons absorbed in the foil and accelerated through the VO2 by an applied electric field; (2) VO2 nanoparticles covered with a sparse mesh of gold nanoparticles averaging 20-30 nm in diameter in which hot electrons are generated by resonant excitation and decay of the localized surface plasmon; and (3) bare VO2 thin films excited by intense near-single-cycle THz pulses. In the first case, the IMT is driven by excitation of the bulk gold plasmon, and the SPT appears on a few-picosecond time scale. In the second case, density-functional calculations indicate that above a critical carrier density, the addition of a single electron to a 27-unit supercell drives the catastrophic collapse of the coherent phonon associated with, and leading to, the SPT. In the third case, sub-bandgap-energy photons (approximately 0.1 eV) initiate the IMT, but exhibit the same sub-100 femtosecond switching time and coherent phonon dynamics as observed when the IMT is initiated by 1.5 eV photons. This suggests that the underlying mechanism must be quite different, possibly THz-field induced interband tunneling of spatially separated electron-hole pairs. The implications of these findings for ultrafast switching in opto-electronic devices - such as hybrid VO2 silicon ring resonators - are briefly considered. Support from the National Science Foundation (DMR-1207407), the Office of Science, U.S. Department of Energy (DE-FG02-01ER45916) and the Defense Threat-Reduction Agency (HDTRA1-10-1-0047) for these studies is gratefully acknowledged.

Bidirectional current triggering in planar devices based on serially connected VO₂ thin films using 965 nm laser diode.

PubMed

Kim, Jihoon; Park, Kyongsoo; Kim, Bong-Jun; Lee, Yong Wook

2016-08-08

By incorporating a 965 nm laser diode, the bidirectional current triggering of up to 30 mA was demonstrated in a two-terminal planar device based on serially connected vanadium dioxide (VO₂) thin films grown by pulsed laser deposition. The bidirectional current triggering was realized by using the focused beams of laser pulses through the photo-thermally induced phase transition of VO₂. The transient responses of laser-triggered currents were also investigated when laser pulses excited the device at a variety of pulse widths and repetition rates of up to 4.0 Hz. A switching contrast between off- and on-state currents was obtained as ~8333, and rising and falling times were measured as ~39 and ~29 ms, respectively, for 50 ms laser pulses.

Selective scanning tunneling microscope light emission from rutile phase of VO2.

PubMed

Sakai, Joe; Kuwahara, Masashi; Hotsuki, Masaki; Katano, Satoshi; Uehara, Yoichi

2016-09-28

We observed scanning tunneling microscope light emission (STM-LE) induced by a tunneling current at the gap between an Ag tip and a VO2 thin film, in parallel to scanning tunneling spectroscopy (STS) profiles. The 34 nm thick VO2 film grown on a rutile TiO2 (0 0 1) substrate consisted of both rutile (R)- and monoclinic (M)-structure phases of a few 10 nm-sized domains at room temperature. We found that STM-LE with a certain photon energy of 2.0 eV occurs selectively from R-phase domains of VO2, while no STM-LE was observed from M-phase. The mechanism of STM-LE from R-phase VO2 was determined to be an interband transition process rather than inverse photoemission or inelastic tunneling processes.

Exploring the work function variability and structural stability of VO2(1 1 0) surface upon noble metal (Ag, Au, Pt) adsorption and incorporation

NASA Astrophysics Data System (ADS)

Chen, Lanli; Cui, Yuanyuan; Shi, Siqi; Luo, Hongjie; Gao, Yanfeng

2018-08-01

Vanadium dioxide (VO2) has attracted great attention, with scientific and technological advances over the past few decades due to its reversible metal-insulator transition at 340 K. However, the high phase transition temperature (Tc) of VO2 limits its practical applications. Our first-principles calculations show that VO2(1 1 0) surfaces with adsorbed noble metals (Ag, Au, Pt) exhibit a lower work function compared with the clean surface and further induces a lower Tc due to charge transfer from the noble metals to the VO2(1 1 0) surface. However, the work functions of the VO2(1 1 0) surfaces after the incorporation of noble metals are higher than that of the clean surface. In addition, the results of formation energies of various configurations show that the VO2(1 1 0) surface with the adsorption and incorporation of Ag is energetically more favorable than those with Au and Pt. Therefore, it may be concluded that the adsorption and incorporation of noble metals can not only tailor the work function of VO2, in turn realizing the rational tuning of Tc of VO2, but also stabilize the structures of VO2 thin films. These results provide guidance for further exploration of VO2-based optical switching devices and smart windows.

Thermal conductivity of SrVO3-SrTiO3 thin films: Evidence of intrinsic thermal resistance at the interface between oxide layers

NASA Astrophysics Data System (ADS)

Katsufuji, T.; Saiki, T.; Okubo, S.; Katayama, Y.; Ueno, K.

2018-05-01

By using a technique of thermoreflectance that can precisely measure the thermal conductivity of thin films, we found that the thermal conductivity of SrVO3-SrTiO3 multilayer thin films normal to the surface was substantially reduced by decreasing the thickness of each layer. This indicates that a large intrinsic thermal resistance exists at the interface between SrVO3 and SrTiO3 in spite of the similar phononic properties for these two compounds.

Electronic structure and insulating gap in epitaxial VO 2 polymorphs

DOE PAGES

Lee, Shinbuhm; Meyer, Tricia L.; Sohn, Changhee; ...

2015-12-24

Here, determining the origin of the insulating gap in the monoclinic VO 2(M1) is a long-standing issue. The difficulty of this study arises from the simultaneous occurrence of structural and electronic transitions upon thermal cycling. Here, we compare the electronic structure of the M1 phase with that of single crystalline insulating VO 2(A) and VO 2(B) thin films to better understand the insulating phase of VO 2. As these A and B phases do not undergo a structural transition upon thermal cycling, we comparatively study the origin of the gap opening in the insulating VO 2 phases. By x-ray absorptionmore » and optical spectroscopy, we find that the shift of unoccupied t 2g orbitals away from the Fermi level is a common feature, which plays an important role for the insulating behavior in VO 2 polymorphs. The distinct splitting of the half-filled t 2g orbital is observed only in the M1 phase, widening the bandgap up to ~0.6 eV. Our approach of comparing all three insulating VO 2 phases provides insight into a better understanding of the electronic structure and the origin of the insulating gap in VO 2.« less

Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films

PubMed Central

Ji, Yanda; Zhang, Yin; Gao, Min; Yuan, Zhen; Xia, Yudong; Jin, Changqing; Tao, Bowan; Chen, Chonglin; Jia, Quanxi; Lin, Yuan

2014-01-01

Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device development. The metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3 (0001) substrates were systematically studied by characterizing the temperature dependency of both Raman spectrum and Fourier transform infrared spectroscopy. Our findings on the correlation between the nucleation dynamics of intermediate monoclinic (M2) phase with microstructures will open a new avenue for the design and integration of advanced heterostructures with controllable multifunctionalities for sensing and imaging system applications. PMID:24798056

Size and composition-controlled fabrication of thermochromic metal oxide nanocrystals

NASA Astrophysics Data System (ADS)

Clavero, César; Slack, Jonathan L.; Anders, André

2013-09-01

Finding new methods for the fabrication of metal oxide nanocrystals with high control on their composition, size and crystallinity is paramount for making large-area and low-cost optical coatings. Here, we demonstrate the fabrication of thermochromic VO2 nanocrystals using a physical vapour deposition-based route, with high control over their composition, size and crystallinity. This technique presents great potential to be scaled up and integrated with in-line coaters, commonly used for large-area deposition. Optimum crystallization of the VO2 nanoparticles is achieved after post-growth annealing at 350 °C, a temperature drastically lower than that required by chemical or implantation fabrication methods. The obtained nanoparticle thin films exhibit superior modulation of the transmittance in the visible and near IR portion of the spectrum as compared to conventional VO2 thin films due to plasmonic effects, opening up a new horizon in applications such as smarts windows.

Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films

PubMed Central

Kocer, Hasan; Butun, Serkan; Palacios, Edgar; Liu, Zizhuo; Tongay, Sefaattin; Fu, Deyi; Wang, Kevin; Wu, Junqiao; Aydin, Koray

2015-01-01

Plasmonic and metamaterial based nano/micro-structured materials enable spectrally selective resonant absorption, where the resonant bandwidth and absorption intensity can be engineered by controlling the size and geometry of nanostructures. Here, we demonstrate a simple, lithography-free approach for obtaining a resonant and dynamically tunable broadband absorber based on vanadium dioxide (VO2) phase transition. Using planar layered thin film structures, where top layer is chosen to be an ultrathin (20 nm) VO2 film, we demonstrate broadband IR light absorption tuning (from ~90% to ~30% in measured absorption) over the entire mid-wavelength infrared spectrum. Our numerical and experimental results indicate that the bandwidth of the absorption bands can be controlled by changing the dielectric spacer layer thickness. Broadband tunable absorbers can find applications in absorption filters, thermal emitters, thermophotovoltaics and sensing. PMID:26294085

Surface charge sensing by altering the phase transition in VO2

NASA Astrophysics Data System (ADS)

Kumar, S.; Esfandyarpour, R.; Davis, R.; Nishi, Y.

2014-08-01

Detection of surface charges has various applications in medicine, electronics, biotechnology, etc. The source of surface charge induction may range from simple charge-polarized molecules like water to complicated proteins. It was recently discovered that surface charge accumulation can alter the temperature at which VO2 undergoes a Mott transition. Here, we deposited polar molecules onto the surface of two-terminal thin-film VO2 lateral devices and monitored the joule-heating-driven Mott transition, or conductance switching. We observed that the power required to induce the conductance switching reduced upon treatment with polar molecules and, using in-situ blackbody-emission direct measurement of local temperature, we show that this reduction in power was accompanied by reduction in the Mott transition temperature. Further evidence suggested that this effect has specificity to the nature of the species used to induce surface charges. Using x-ray absorption spectroscopy, we also show that there is no detectable change in oxidation state of vanadium or structural phase in the bulk of the 40 nm VO2 thin-film even as the phase transition temperature is reduced by up to 20 K by the polar molecules. The ability to alter the phase transition parameters by depositing polar molecules suggests a potential application in sensing surface charges of different origins and this set of results also highlights interesting aspects of the phase transition in VO2.

Oxidizing annealing effects on VO2 films with different microstructures

NASA Astrophysics Data System (ADS)

Dou, Yan-Kun; Li, Jing-Bo; Cao, Mao-Sheng; Su, De-Zhi; Rehman, Fida; Zhang, Jia-Song; Jin, Hai-Bo

2015-08-01

Vanadium dioxide (VO2) films have been prepared by direct-current magnetron sputter deposition on m-, a-, and r-plane sapphire substrates. The obtained VO2 films display different microstructures depending on the orientation of sapphire substrates, i.e. mixed microstructure of striped grains and equiaxed grains on m-sapphire, big equiaxed grains on a-sapphire and fine-grained microstructure on r-sapphire. The VO2 films were treated by the processes of oxidation in air. The electric resistance and infrared transmittance of the oxidized films were characterized to examine performance characteristics of VO2 films with different microstructures in oxidation environment. The oxidized VO2 films on m-sapphire exhibit better electrical performance than the other two films. After air oxidization for 600 s at 450 °C, the VO2 films on m-sapphire show a resistance change of 4 orders of magnitude over the semiconductor-to-metal transition. The oxidized VO2 films on a-sapphire have the highest optical modulation efficiency in infrared region compared to other samples. The different performance characteristics of VO2 films are understood in terms of microstructures, i.e. grain size, grain shape, and oxygen vacancies. The findings reveal the correlation of microstructures and performances of VO2 films, and provide useful knowledge for the design of VO2 materials to different applications.

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse.

PubMed

Oliva, Nicoló; Casu, Emanuele Andrea; Yan, Chen; Krammer, Anna; Rosca, Teodor; Magrez, Arnaud; Stolichnov, Igor; Schueler, Andreas; Martin, Olivier J F; Ionescu, Adrian Mihai

2017-10-27

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS 2 ) on a phase transition material, vanadium dioxide (VO 2 ). The vdW MoS 2 /VO 2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO 2 . We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.

Effects of V2O3 buffer layers on sputtered VO2 smart windows: Improved thermochromic properties, tunable width of hysteresis loops and enhanced durability

NASA Astrophysics Data System (ADS)

Long, Shiwei; Cao, Xun; Sun, Guangyao; Li, Ning; Chang, Tianci; Shao, Zewei; Jin, Ping

2018-05-01

Vanadium dioxide (VO2) is one of the most well-known thermochromic materials, which exhibits a notable optical change from transparent to reflecting in the infrared region upon a metal-insulator phase transition. For practical applications, VO2 thin films should be in high crystalline quality to obtain a strong solar modulation ability (ΔTsol). Meanwhile, narrow hysteresis loops and robust ambient durability are also indispensable for sensitivity and long-lived utilization, respectively. In this work, a series of high-quality V2O3/VO2 bilayer structures were grown on quartz glass substrates by reactive magnetron sputtering. Basically, the bottom V2O3 acts as the buffer layer to improve the crystallinity of the top VO2, while the VO2 serves as the thermochromic layer to guarantee the solar modulation ability for energy-saving. We observed an obvious increase in ΔTsol of 76% (from 7.5% to 13.2%) for VO2 films after introducing V2O3 buffer layers. Simultaneously, a remarkable reduction by 79% (from 21.9 °C to 4.7 °C) in width of hysteresis loop was obtained when embedding 60 nm V2O3 buffer for 60 nm VO2. In addition, VO2 with non-stoichiometry of V2O3±x buffer demonstrates a broadening hysteresis loops width, which is derived from the lattice distortion caused by lattice imperfection. Finally, durability of VO2 has been significantly improved due to positive effects of V2O3 buffer layer. Our results lead to a comprehensive enhancement in crystallinity of VO2 and shed new light on the promotion of thermochromic property by homologous oxides for VO2.

Control of the metal-insulator transition in vanadium dioxide by modifying orbital occupancy

NASA Astrophysics Data System (ADS)

Aetukuri, Nagaphani B.; Gray, Alexander X.; Drouard, Marc; Cossale, Matteo; Gao, Li; Reid, Alexander H.; Kukreja, Roopali; Ohldag, Hendrik; Jenkins, Catherine A.; Arenholz, Elke; Roche, Kevin P.; Dürr, Hermann A.; Samant, Mahesh G.; Parkin, Stuart S. P.

2013-10-01

External control of the conductivity of correlated oxides is one of the most promising schemes for realizing energy-efficient electronic devices. Vanadium dioxide (VO2), an archetypal correlated oxide compound, undergoes a temperature-driven metal-insulator transition near room temperature with a concomitant change in crystal symmetry. Here, we show that the metal-insulator transition temperature of thin VO2(001) films can be changed continuously from ~285 to ~345K by varying the thickness of the RuO2 buffer layer (resulting in different epitaxial strains). Using strain-, polarization- and temperature-dependent X-ray absorption spectroscopy, in combination with X-ray diffraction and electronic transport measurements, we demonstrate that the transition temperature and the structural distortion across the transition depend on the orbital occupancy in the metallic state. Our findings open up the possibility of controlling the conductivity in atomically thin VO2 layers by manipulating the orbital occupancy by, for example, heterostructural engineering.

Orientation of Vanadium Dioxide Grains on Various Substrates

NASA Astrophysics Data System (ADS)

Rivera, Felipe; Davis, Robert; Vanfleet, Richard

2010-10-01

Crystalline vanadium dioxide VO2 experiences a fast and reversible semiconductor-to-metal structural phase transition near 68^oC. The changes exhibited during this phase transition comprise a well known change in resistivity of several orders of magnitude, as well as a significant drop in optical transmittance in the infrared. Due to the changes in these optical and electronic properties, vanadium dioxide shows promise as a material to be used in many applications ranging from thermochromic window coatings to optoelectronic devices. However, since there is a structural component to the phase transition of VO2, it is of interest to study the orientation of the crystalline grains deposited. Substrates such as glass, SiO2, Sapphire, and TiO2 have been used for the deposition of this material. We used orientation imaging microscopy to study and characterize the orientation of the grains deposited on several of these substrates. Here we present results on this study.

Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films

NASA Astrophysics Data System (ADS)

Tadjer, Marko J.; Wheeler, Virginia D.; Downey, Brian P.; Robinson, Zachary R.; Meyer, David J.; Eddy, Charles R.; Kub, Fritz J.

2017-10-01

Amorphous vanadium oxide (VO2) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 °C for 1-2 h under a low oxygen pressure (10-4 to 10-5 Torr). Under these conditions the crystalline VO2 phase was maintained, while formation of the V2O5 phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 °C range, with an ROFF/RON ratio of up to about 750 and ΔTC ≅ 7-10 °C. Lateral electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO2 sample processed with the 2 h long O2 anneal. Both the width and slope of the field induced MIT I-V hysteresis were dependent upon the VO2 crystalline quality.

VO 2 thin films synthesis for collaborators and various applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Raegan Lynn; Clem, Paul G.

2016-11-01

Vanadium dioxide (VO 2) is an attractive material for a variety of applications due to its metal-to-insulator transition (MIT) observed at modest temperatures. This transition takes VO 2 from its low temperature insulating monoclinic phase to a high temperature (above 68°C) metallic rutile phase. This transition gives rise to a change in resistivity up to 5 orders of magnitude and a change in complex refractive index (especially at IR wavelengths), which is of interest for radar circuit protection and tunable control of infrared signature. Recently, collaborations have been initiated between CINT scientists and external university programs. The Enhanced Surveillance fundsmore » help fund this work which enabled synthesis of VO 2 films for several collaborations with internal and external researchers.« less

Influences of W Content on the Phase Transformation Properties and the Associated Stress Change in Thin Film Substrate Combinations Studied by Fabrication and Characterization of Thin Film V1- xW xO2 Materials Libraries.

PubMed

Wang, Xiao; Rogalla, Detlef; Ludwig, Alfred

2018-04-09

The mechanical stress change of VO 2 film substrate combinations during their reversible phase transformation makes them promising for applications in micro/nanoactuators. V 1- x W x O 2 thin film libraries were fabricated by reactive combinatorial cosputtering to investigate the effects of the addition of W on mechanical and other transformation properties. High-throughput characterization methods were used to systematically determine the composition spread, crystalline structure, surface topography, as well as the temperature-dependent phase transformation properties, that is, the hysteresis curves of the resistance and stress change. The study indicates that as x in V 1- x W x O 2 increases from 0.007 to 0.044 the crystalline structure gradually shifts from the VO 2 (M) phase to the VO 2 (R) phase. The transformation temperature decreases by 15 K/at. % and the resistance change is reduced to 1 order of magnitude, accompanied by a wider transition range and a narrower hysteresis with a minimal value of 1.8 K. A V 1- x W x O 2 library deposited on a Si 3 N 4 /SiO 2 -coated Si cantilever array wafer was used to study simultaneously the temperature-dependent stress change σ( T) of films with different W content through the phase transformation. Compared with σ( T) of ∼700 MPa of a VO 2 film, σ( T) in V 1- x W x O 2 films decreases to ∼250 MPa. Meanwhile, σ( T) becomes less abrupt and occurs over a wider temperature range with decreased transformation temperatures.

Growth and study of first order metal insulator transition in VO2 films

NASA Astrophysics Data System (ADS)

Rathore, Ajay K.; Kumar, Satish; Kumar, Dhirendra; Sathe, V. G.

2015-06-01

VO2 films have been grown on Si substrate using pulse laser deposition technique. The as-deposited film prepared by V2O3 target is found to possess signatures of V2O5 phase. Up on annealing at 780°C the film transforms to VO2 phase. The annealed film is found to be highly oriented along (011) and single phase in nature. The high temperature Raman spectroscopic measurements on the annealed film showed first order transition from monoclinic insulating phase to conductive tetragonal rutile phase around 65°C.

Investigations on structural and giant magneto impedance properties of Zn3(VO4)2 nanorods

NASA Astrophysics Data System (ADS)

Malaidurai, M.; Bulusu, Venkat; De, Sourodeep; Thangavel, R.

2018-05-01

In this paper, we successfully synthesized Zn3(VO4)2 novel nanorods by hydrothermal method. As mixed phase of Zn3(VO4)2 structural and phase transformations were monitored in crystal lattice with different ionic strength by X-ray diffraction(XRD). The Zn3(VO4)2 thin film formation validated through qualitative and quantitative analysis by FESEM and it is clearly depicted the formation of the Zn3(VO4)2 nanorods varied from ˜100nm in lengths and ˜30 nm in widths. The Zn precursor's anions directly influence the composition and shape of the resultant hydrated Zn3(VO4)2. Impedance analysis were closely studied with Impedance-Frequency characterization, which was then followed by a dielectric measurement. The analysis of GMI effect was carried out with the help of the model equivalent circuit at low frequencies, constant phase element (CPE). GMI effect and the sensitivity are calculated for the sample by appling magnetic field and driving frequency in order to analyze the giant magnetoimpedance resistance of grain boundaries for spintronics applications.

Chemically induced porosity on BiVO4 films produced by double magnetron sputtering to enhance the photo-electrochemical response.

PubMed

Thalluri, Sitaramanjaneya Mouli; Rojas, Roberto Mirabal; Rivera, Osmary Depablos; Hernández, Simelys; Russo, Nunzio; Rodil, Sandra Elizabeth

2015-07-21

Double magnetron sputtering (DMS) is an efficient system that is well known because of its precise control of the thin film synthesizing process over any kind of substrate. Here, DMS has been adopted to synthesize BiVO4 films over a conducting substrate (FTO), using metallic vanadium and ceramic Bi2O3 targets simultaneously. The films were characterized using different techniques, such as X-ray diffraction (XRD), UV-Vis spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and profilometry. The photo-electrochemical analysis was performed using linear scan voltammetry, chronoamperometry and electrochemical impedance spectroscopy (EIS) under the illumination of simulated solar light at 1 Sun. The photocurrent density of the sputtered BiVO4 thin films could be improved from 0.01 mA cm(-2) to 1.19 mA cm(-2) at 1.23 V vs. RHE by chemical treatment using potassium hydroxide (KOH). The effect of KOH was the removal of impurities from the grain boundaries, leading to a more porous structure and more pure crystalline monoclinic BiVO4 particles. Such variations in the microstructure as well as the improvement of the charge transfer properties of the BiVO4 film after the KOH treatment were confirmed and studied in depth by EIS analysis.

Geometric confinement effects on the metal-insulator transition temperature and stress relaxation in VO2 thin films grown on silicon

NASA Astrophysics Data System (ADS)

Viswanath, Changhyun Ko, B.; Yang, Zheng; Ramanathan, Shriram

2011-03-01

VO2 undergoes a sharp metal-insulator transition at ˜67 °C with several orders of change in conductivity and optical transmittance. Understanding and control of the properties of vanadium oxide layers grown on technologically relevant substrates such as Si (100) single crystals is therefore of great interest. In this work, we show tunability of metal-insulator transition temperature as well as recoverable stress in VO2 thin films grown on Si substrate by introducing nanoscale atomic layer deposited HfO2 interfacial layers with no degradation in the resistance ratio. For a confined VO2 film, the metal-insulator transition temperature is suppressed by ˜16 °C and the recoverable stress is 150 MPa, compared to 400 MPa for a bare film. These observations are further correlated with in situ variable temperature measurement of stress changes occurring during the phase transition. Structural and microstructural studies on the various samples have been carried out by x ray diffraction and cross-sectional transmission electron microscopy. The strategy of tuning the metal-insulator transition characteristics by nanoscale interfacial dielectrics is of broader relevance in design of programmable materials and integration into solid state devices for electronics.

Influence of Heat Treatment Conditions on the Properties of Vanadium Oxide Thin Films for Thermochromic Applications.

PubMed

Kim, Donguk; Kwon, Samyoung; Park, Young; Boo, Jin-Hyo; Nam, Sang-Hun; Joo, Yang Tae; Kim, Minha; Lee, Jaehyeong

2016-05-01

In present work, the effects of the heat treatment on the structural, optical, and thermochromic properties of vanadium oxide films were investigated. Vanadium dioxide (VO2) thin films were deposited on glass substrate by reactive pulsed DC magnetron sputtering from a vanadium metal target in mixture atmosphere of argon and oxygen gas. Various heat treatment conditions were applied in order to evaluate their influence on the crystal phases formed, surface morphology, and optical properties. The films were characterized by an X-ray diffraction (XRD) in order to investigate the crystal structure and identify the phase change as post-annealing temperature of 500-600 degrees C for 5 minutes. Surface conditions of the obtained VO2(M) films were analyzed by field emission scanning electron microscopy (FE-SEM) and the semiconductor-metal transition (SMT) characteristics of the VO2 films were evaluate by optical spectrophotometry in the UV-VIS-NIR, controlling temperature of the films.

Effect of temperature on NH3 sensing by ZnO: Mg thin film grown by radio frequency magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Vinoth, E.; Gopalakrishnan, N.

2018-04-01

Undoped and Mg doped (at l0 mol %) ZnO thin films have been grown on glass substrates by using the RF magnetron sputtering. The structural properties of the fabricated thin films were studied by X-ray diffraction analysis and it was found hexagonal wurtzite phase and preferential orientation along (002) of both films. Green Band Emission peaks in the Photoluminescence spectra confirm the structural defects such as oxygen vacancies (Vo) in the films. Uniform distribution of spherical shape morphology of grains observed in the both films by FESEM. However, the growth of grains was found in the Mg doped thin film. The temperature dependent ammonia sensing is done by the indigenously made gas sensing setup. The gas response of the both films was increased as the temperature increases, attains maximum at 75° C and then decreases. Response and recovery time measurementswere donefor boththe films and it shows the fast response time and quick recovery for doped thin film compared to the pure ZnO thin film.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Shifeng; Wang, Shuyu; Lu, Ming

In this paper, vanadium thin films were deposited on sapphire substrates by DC magnetron sputtering and then oxidized in a tube furnace filled with oxygen under different temperatures and oxygen flow rates. The significant influence of the oxygen flow rate and oxidation temperature on the electrical and structural properties of the vanadium oxide thin films were investigated systematically. It shows the pure vanadium dioxide (VO 2) state can only be obtained in a very narrow temperature and oxygen flow rate range. The resistivity change during the metal-insulator transition varies from 0.2 to 4 orders of magnitude depending on the oxidationmore » condition. Large thermal hysteresis during the metal-insulator phase transition was observed during the transition compared to the results in literature. Proper oxidation conditions can significantly reduce the thermal hysteresis. Finally, the fabricated VO 2 thin films showed the potential to be applied in the development of electrical sensors and other smart devices.« less

BiVO{sub 4} photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gong, Haibo; Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin; Freudenberg, Norman

2016-04-15

Photoactive bismuth vanadate (BiVO{sub 4}) thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC) properties of the BiVO{sub 4} films were investigated. Phase-pure monoclinic BiVO{sub 4} films, which are more photoactive than the tetragonal BiVO{sub 4} phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO{sub 4} films, the photocurrent increased 2.6 times compared to undoped films. After optimization of the BiVO{sub 4} film thickness, the photocurrent densities (without a catalyst or a blocking layer ormore » a hole scavenger) exceeded 1.2 mA/cm{sup 2} at a potential of 1.23 V{sub RHE} under solar AM1.5 irradiation. The surprisingly high injection efficiency of holes into the electrolyte is attributed to the highly porous film morphology. This co-magnetron sputtering preparation route for photoactive BiVO{sub 4} films opens new possibilities for the fabrication of large-scale devices for water splitting.« less

Simulation study of MEMS piezoelectric vibration energy harvester based on c-axis tilted AlN thin film for performance improvement

NASA Astrophysics Data System (ADS)

Kong, Lingfeng; Zhang, Jinhui; Wang, Huiyuan; Ma, Shenglin; Li, Fang; Wang, Qing-Ming; Qin, Lifeng

2016-12-01

In this paper, a MEMS piezoelectric cantilevered vibration energy harvester based on c-axis tilted AlN thin film is investigated. Based on basic piezoelectric equations and static analysis of cantilever beam, the equations for generated energy (E) and open circuit voltage (Vo) were derived, and simulations were carried out to study the effects of geometry parameters and c-axis tilted angle. Results show that E and Vo of energy harvesters are greatly dependent on c-axis tilted angle and geometry parameters, while the coupling between c-axis tilted angle and geometry parameters is not strong. For a given structure size, E and Vo can be almost simultaneously improved by controlling c-axis tilted angle; compared with the case of normal c-axis angle, E with optimal c-axis tilted angle can be amplified by more than 3 times, and the Vo is amplified by about 2 times. E or Vo could be further improved by geometry parameters, while there is trade-off between them. These results can be used for the design and application of piezoelectric cantilevered vibration energy harvester.

Epitaxial growth of VO2 by periodic annealing

NASA Astrophysics Data System (ADS)

Tashman, J. W.; Lee, J. H.; Paik, H.; Moyer, J. A.; Misra, R.; Mundy, J. A.; Spila, T.; Merz, T. A.; Schubert, J.; Muller, D. A.; Schiffer, P.; Schlom, D. G.

2014-02-01

We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

Degradation process by effect of water molecules during negative bias temperature stress in amorphous-InGaZnO thin-film transistor

NASA Astrophysics Data System (ADS)

Lee, Yeol-Hyeong; Cho, Yong-Jung; Kim, Woo-Sic; Park, Jeong Ki; Kim, Geon Tae; Kim, Ohyun

2017-10-01

We explained how H2O degrades amorphous-InGaZnO thin-film transistors. H2O caused serious degradation only during negative bias temperature stress (NBTS). Degradation was caused by molecules that were absorbed or diffused from the outside. We suggest that degradation under NBTS is caused by the migration of hydrogen ions among oxygen vacancies. Under illumination, the soaking time t S did not affect the threshold voltage shift ΔV th. We consider that this independence occurred because illumination caused ionization from the oxygen vacancy VO state to VO 2+, which impeded hydrogen migration induced by electric field and thereby protected the device from degradation after exposure to water.

Ferromagnetism induced by oxygen-vacancy complex in (Mn, in) codoped ZnO

NASA Astrophysics Data System (ADS)

Wu, Kongping; Gu, Shulin; Tang, Kun; Zhu, Shunming; Zhou, Mengran; Huang, Yourui; Xu, Mingxiang; Zhang, Rong; Zheng, Youdou

2012-07-01

Mn doped Zinc oxide (ZnO) thin films were prepared by metal organic chemical vapor deposition (MOCVD) technique. Structural characterizations by X-ray diffraction technique (XRD) and photoluminescence (PL) indicate the crystal quality of ZnO films. PL and Raman show a large fraction of oxygen vacancies (VO2+) are generated by vacuum annealed the film. The enhancement of ferromagnetism in post-annealed (Mn, In) codoped ZnO could result from VO2+ incorporation. The effect of VO2+ on the magnetic properties of (Mn, In) codoped ZnO has been studied by first-principles calculations. It is found that only In donor cannot induce ferromagnetism (FM) in Mn-doped ZnO. Besides, the presence of VO2+ makes the Mn empty 3d-t2g minority state broadened, and a t2g-VO2+ hybrid level at the conduction band minimum forms. The presence of VO2+ can lead to strong ferromagnetic coupling with the nearest neighboring Mn cation by BMP model based on defects reveal that the ferromagnetic exchange is mediated by the donor impurity state, which mainly consists of Mn 3d electrons trapped in oxygen vacancies.

Correlation of plume dynamics and oxygen pressure with VO2 stoichiometry during pulsed laser deposition

NASA Astrophysics Data System (ADS)

Lafane, S.; Kerdja, T.; Abdelli-Messaci, S.; Khereddine, Y.; Kechouane, M.; Nemraoui, O.

2013-07-01

Vanadium dioxide thin films have been deposited on Corning glass substrates by a KrF laser ablation of V2O5 target at the laser fluence of 2 J cm-2. The substrate temperature and the target-substrate distance were set to 500 ∘C and 4 cm, respectively. X-ray diffraction analysis showed that pure VO2 is only obtained at an oxygen pressure range of 4×10-3-2×10-2 mbar. A higher optical switching contrast was obtained for the VO2 films deposited at 4×10-3-10-2 mbar. The films properties were correlated to the plume-oxygen gas interaction monitored by fast imaging of the plume.

Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering

NASA Astrophysics Data System (ADS)

Li, Yan; Zhang, Dongping; Wang, Bo; Liang, Guangxing; Zheng, Zhuanghao; Luo, Jingting; Cai, Xingmin; Fan, Ping

2013-12-01

Vanadium oxide thin films were prepared by DC reactive sputtering method, and the samples were annealed in Ar atmosphere under different temperature for 2 hours. The microstructure, optical and electrical properties of the as-grown and treated samples were characterized by XRD, spectrophotometer, and four-probe technique, respectively. XRD results investigated that the main content of the annealed sample are VO2 and V2O5. With annealing temperature increasing, the intensity of the VO2 phase diffraction peak strengthened. The electrical properties reveal that the annealed samples exhibit semiconductor-to-metal transition characteristic at about 40°C. Comparison of transmission spectra of the samples at room temperature and 100°C, a drastic drop in IR region is found.

Spontaneous generation of vortex and coherent vector beams from a thin-slice c-cut Nd:GdVO4 laser with wide-aperture laser-diode end pumping: application to highly sensitive rotational and translational Doppler velocimetry

NASA Astrophysics Data System (ADS)

Otsuka, Kenju; Chu, Shu-Chun

2017-07-01

Selective excitation of Laguerre-Gauss modes (optical vortices: helical LG0,2 and LG0,1), reflecting their weak transverse cross-saturation of population inversions against a preceding higher-order Ince-Gauss (IG0,2) or Hermite-Gauss (HG2,1) mode, was observed in a thin-slice c-cut Nd:GdVO4 laser with wide-aperture laser-diode end pumping. Single-frequency coherent vector beams were generated through the transverse mode locking of a pair of orthogonally polarized IG2,0 and LG0,2 or HG2,1 and LG0,1 modes. Highly sensitive self-mixing rotational and translational Doppler velocimetry is demonstrated by using vortex and coherent vector beams.

Control of electromagnetically induced transparency via a hybrid semiconductor quantum dot-vanadium dioxide nanoparticle system

NASA Astrophysics Data System (ADS)

Zamani, Naser; Hatef, Ali; Nadgaran, Hamid; Keshavarz, Alireza

2017-07-01

We numerically investigate the electromagnetically induced transparency (EIT) of a hybrid system consisting of a three-level quantum dot (QD) in the vicinity of vanadium dioxide nanoparticle (VO2NP). VO2NP has semiconductor and metallic phases where the transition between the two phases occurs around a critical temperature. When the QD-VO2NP hybrid system interacts with continuous wave laser fields in an infrared regime, it supports a coherent coupling of exciton-polariton and exciton-plasmon polariton in semiconductor and metal phases of VO2NP, respectively. In our calculations a filling fraction factor controls the VO2NP phase transition. A probe and control laser field configuration is studied for the hybrid system to measure the absorption of QD through the filling fraction factor manipulations. We show that for the VO2NP semiconductor phase and proper geometrical configuration, the absorption spectrum profile of the QD represents an EIT with two peaks and a clear minimum. These two peaks merge to one through the VO2NP phase transition to metal. We also show that the absorption spectrum profile is modified by different orientations of the laser fields with the axis of the QD-VO2NP hybrid system. The innovation in comparison to other research in the field is that robust variation in the absorption profile through EIT is due to the phase transition in VO2NP without any structural change in the QD-VO2NP hybrid system. Our results can be employed to design nanothermal sensors, optical nanoswitches, and energy transfer devices.

Effect of the KOH chemical treatment on the optical and photocatalytic properties of BiVO4 thin films

NASA Astrophysics Data System (ADS)

Mirabal-Rojas, R.; Depablos-Rivera, O.; Thalluri, S. M.; Medina, J. C.; Bizarro, M.; Perez-Alvarez, J.; Rodil, S. E.; Zeinert, A.

2016-04-01

In this work, we present the structural, optical and photocatalytic properties of BiVO4 thin films produced by a dual-magnetron sputtering process using both Bi2O3 (α-phase, 99.98 % purity) and V (99.9 % purity) targets under Ar/O2 atmosphere with a ratio of 18:2. The films were deposited varying the power applied to the targets to obtain stoichiometric films, and the monoclinic structure was achieved by post-deposition annealing. The dual process was chosen to better control the Bi/V ratio since Bi and V have very different sputtering yields. In particular, the influence of a chemical treatment using potassium hydroxide (KOH) on the optical properties and different dye discolorations (acid blue 113 and methyl orange) is discussed. The optical properties were studied by reflectance and transmittance spectroscopy, where the spectra were fitted to obtain the refractive index dispersion and the optical band gap of the BiVO4 as a function of the film structure, as determined by X-ray diffraction and Raman spectroscopy.

Surface structural reconstruction of SrVO3 thin films on SrTiO3 (001)

NASA Astrophysics Data System (ADS)

Wang, Gaomin; Saghayezhian, Mohammad; Chen, Lina; Guo, Hangwen; Zhang, Jiandi

Paramagnetic metallic oxide SrVO3>(SVO) is an itinerant system known to undergo thickness-induced metal-insulator-transition (MIT) in ultrathin film form, which makes it a prototype system for the study of the mechanism behind metal-insulator-transition like structure distortion, electron correlations and disorder-induced localization. We have grown SrVO3 thin film with atomically flat surface through the layer-by-layer deposition by laser Molecular Beam Epitaxy (laser-MBE) on SrTiO3 (001) surface. Low Energy Electron Diffraction (LEED) measurements reveal that there is a (√2X √2) R45°surface reconstruction independent of film thickness. By using LEED-I(V) structure refinement, we determine the surface structure. In combination with X-ray Photoelectron Spectroscopy (XPS) and Scanning Tunneling Microscopy (STM), we discuss the implication on the MIT in ultrathin films below 2-3 unit cell thickness. This work is supported by the National Science Foundation under the NSF EPSCoR Cooperative Agreement No. EPS-1003897 with additional support from the Louisiana Board of Regents.

Optical and Nonlinear Optical Response of Light Sensor Thin Films

PubMed Central

Liu, Huimin; Rua, Armando; Vasquez, Omar; Vikhnin, Valentin S.; Fernandez, Felix E.; Fonseca, Luis F.; Resto, Oscar; Weisz, Svi Z.

2005-01-01

For potential ultrafast optical sensor application, both VO2 thin films and nanocomposite crystal-Si enriched SiO2 thin films grown on fused quartz substrates were successfully prepared using pulsed laser deposition (PLD) and RF co-sputtering techniques. In photoluminescence (PL) measurement c-Si/SiO2 film contains nanoparticles of crystal Si exhibits strong red emission with the band maximum ranging from 580 to 750 nm. With ultrashort pulsed laser excitation all films show extremely intense and ultrafast nonlinear optical (NLO) response. The recorded holography from all these thin films in a degenerate-four-wave-mixing configuration shows extremely large third-order response. For VO2 thin films, an optically induced semiconductor-to-metal phase transition (PT) immediately occurred upon laser excitation. it accompanied. It turns out that the fast excited state dynamics was responsible to the induced PT. For c-Si/SiO2 film, its NLO response comes from the contribution of charge carriers created by laser excitation in conduction band of the c-Si nanoparticles. It was verified by introducing Eu3+ which is often used as a probe sensing the environment variations. It turns out that the entire excited state dynamical process associated with the creation, movement and trapping of the charge carriers has a characteristic 500 ps duration.

Role of interfacial transition layers in VO2/Al2O3 heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Honghui; Chisholm, Matthew F; Yang, Tsung-Han

2011-01-01

Epitaxial VO2 films grown by pulsed laser deposition (PLD) on c-cut sapphire substrates ((0001) Al2O3) were studied by aberration-corrected scanning transmission electron microscopy (STEM). A number of film/substrate orientation relationships were found and are discussed in the context of the semiconductor-metal transition (SMT) characteristics. A structurally and electronically modified buffer layer was revealed on the interface and was attributed to the interface free-energy minimization process of accommodating the symmetry mismatch between the substrate and the film. This interfacial transition layer is expected to affect the SMT behavior when the interfacial region is a significant fraction of the VO2 film thickness.

Nanoscale thermal imaging of VO2 via Poole-Frenkel conduction

NASA Astrophysics Data System (ADS)

Spitzig, Alyson; Hoffman, Jason D.; Pivonka, Adam E.; Mickalide, Harry; Frenzel, Alex; Kim, Jeehoon; Ko, Changhyun; Zhou, You; O'Connor, Kevin; Hudson, Eric W.; Ramanathan, Shriram; Hoffman, Jennifer E.

We present a novel method for nanoscale thermal imaging of insulating thin films. We demonstrate this method on VO2, which undergoes a sharp insulator-to-metal transition at 340 K. We sweep the voltage applied to a conducting atomic force microscope tip in contact mode at room temperature and measure the resultant current through a VO2 film. The Poole-Frenkel (PF) conduction mechanism, which dominates in the insulating state of VO2, is fit to extract the local temperature of the film using fundamental constants and known film properties. We measure the local electric field and temperature immediately preceding the insulator-to-metal transition in VO2 to determine whether the transition can be triggered by an applied electric field alone. We calculate an average temperature of 334 +/- 5 K, implying that Joule heating has locally warmed the sample very close to the transition temperature. Our thermometry technique opens up the possibility to measure the local temperature of any film dominated by the PF conduction mechanism, and presents the opportunity to extend our technique to other conduction mechanisms. Canada Excellence Research Chair program and NSERC - CGSM.

Pulsed laser-deposited VO2 thin films on Pt layers

NASA Astrophysics Data System (ADS)

Sakai, Joe; Zaghrioui, Mustapha; Ta Phuoc, Vinh; Roger, Sylvain; Autret-Lambert, Cécile; Okimura, Kunio

2013-03-01

VO2 films were deposited on Pt (111)/TiO2/SiO2/Si (001) substrates by means of a pulsed laser deposition technique. An x-ray diffraction peak at 2θ = 39.9° was deconvoluted into two pseudo-Voigt profiles of Pt (111) and VOx-originated components. The VOx diffraction peak was more obvious in a VOx/Pt (111)/Al2O3 (0001) sample, having a narrower width compared with a VO2/Al2O3 (0001) sample. Temperature-controlled Raman spectroscopy for the VOx/Pt/TiO2/SiO2/Si sample has revealed the monoclinic VO2 phase at low temperature and the structural phase transition at about 72 °C in a heating process. The electronic conductive nature at the high temperature phase was confirmed by near normal incidence infrared reflectivity measurements. Out-of-plane current-voltage characteristics showed an electric field-induced resistance switching at a voltage as low as 0.2 V for a 50 nm-thick film. A survey of present and previous results suggests an experimental law that the transition voltage of VO2 is proportional to the square root of the electrodes distance.

Electrical Conducting and Mechanism of Oxygen-Deficient Tin Oxide Films Deposited by RF Magnetron Sputtering at Various O2/Ar Ratios

NASA Astrophysics Data System (ADS)

Wang, Qi; Wang, Chengbiao; Lv, Changchun; Wang, Yang; Peng, Zhijian; Fu, Xiuli

Oxygen-deficient tin oxide thin films were prepared by radiofrequency magnetron sputtering with a sintered non-stoichiometric tin oxide ceramic target under an atmosphere of various ratios of O2/Ar from pure Ar to 1:1. X-ray diffraction analysis showed that the thin films were polycrystalline with relatively strong (1 1 0), (1 0 1) and (2 1 1) diffraction peaks. Scanning electron microscopy observation revealed that the thin films prepared at different O2/Ar ratios were all of relatively dense and homogeneous structure. With increasing O2/Ar ratio, the grain size of the films decreased slightly, and their chemical composition became close to the stoichiometric SnO2; but the deposition rate as well as film thickness increased first and then decreased sharply. It was revealed that the main defect in obtained films was oxygen vacancy (VO), and as the O2/Ar ratio increased, the concentration of VO fell down monotonously, which would lead to an increased electrical resistivity.

Nanoscale self-templating for oxide epitaxy with large symmetry mismatch

DOE PAGES

Gao, Xiang; Lee, Shinbuhm; Nichols, John A.; ...

2016-12-02

Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO 2(B) thin film on a perovskite SrTiO 3 (STO) substrate. For this study, we observe an ultrathin (2–3 unit cells) interlayer best described as highly strained VO 2(B) nanodomains combined with an extra (Ti,V)O 2 layer on the TiO 2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO 2(B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despitemore » their large symmetry and lattice mismatch.« less

Coherently Coupled ZnO and VO2 Interface studied by Photoluminescence and electrical transport across a phase transition

NASA Astrophysics Data System (ADS)

Srivastava, Amar; Saha, S.; Annadi, A.; Zhao, Y. L.; Gopinadhan, K.; Wang, X.; Naomi, N.; Liu, Z. Q.; Dhar, S.; Herng, T. S.; Nina, Bao; Ariando, -; Ding, Jun; Venkatesan, T.

2012-02-01

In this work we report a study of a coherently coupled interface consisting of a ZnO layer grown on top of an oriented VO2 layer on sapphire by photoluminescence and electrical transport measurements across the VO2 metal insulator phase transition (MIT). The photoluminescence of the ZnO layer showed a broad hysteresis induced by the phase transition of VO2 while the width of the electrical hysteresis was narrow and unaffected by the over layer. The enhanced width of the PL hysteresis was due to the formation of defects during the MIT as evidenced by a broad hysteresis in the opposite direction to that of the band edge PL in the defect luminescense. Unlike VO2 the defects in ZnO did not fully recover across the phase transition. From the defect luminescence data, oxygen interstitials were found to be the predominant defects in ZnO mediated by the strain from the VO2 phase transition. Such coherently coupled interfaces could be of use in characterizing the stability of a variety of interfaces and also for novel device application.

Microwave Tunable Metamaterial Based on Semiconductor-to-Metal Phase Transition.

PubMed

Zhang, Guanqiao; Ma, He; Lan, Chuwen; Gao, Rui; Zhou, Ji

2017-07-18

A microwave tunable metamaterial utilizing the semiconductor-to-metal transition of vanadium dioxide (VO 2 ) is proposed, experimentally demonstrated and theoretically scrutinized. Basic concept of the design involves the combination of temperature-dependent hysteresis in VO 2 with resonance induced heating, resulting in a nonlinear response to power input. A lithographically prepared gold split-rings resonator (SRR) array deposited with VO 2 thin film is fabricated. Transmission spectra analysis shows a clear manifestation of nonlinearity, involving power-dependence of resonant frequency as well as transmitted intensity at both elevated and room temperature. Simulation performed with CST Microwave Studio conforms with the findings. The concept may find applications in transmission modulation and frequency tuning devices working under microwave frequency bands.

Synthesis and thermochromic property studies on W doped VO2 films fabricated by sol-gel method.

PubMed

Pan, Guoping; Yin, Jinhua; Ji, Keli; Li, Xiang; Cheng, Xingwang; Jin, Haibo; Liu, Jiping

2017-07-21

Tungsten-doped VO 2 thin films have been synthesized by a modified sol-gel process and followed by a post annealing. Vanadium pentoxide and tungstic acid as raw materials with the addition of hydrogen peroxide, concentrated hydrochloric acid (catalyst) and oxalic acid used as reducing agent were reacted in isobutanol. Finally, the uniform sol of vanadyl oxalate in isobutanol solvent was obtained as precursor. Detailed study suggested that W doped in VO 2 introduces additional electron carriers and induces the formation of V 3+ . Post annealing under vacuum promotes the releasing of chemical stress and generates oxygen vacancies in the samples. Temperature dependent transmittance study revealed that the releasing of chemical stress and deliberately introducing oxygen vacancies in W-doped VO 2 films have positive effects on enhancing its switching ability in the infrared transmittance as the metal-insulator transition (MIT) occurs. The largest switching of transmittance was obtained about 48% in the infrared range at 43 °C in 1.5%W doped VO 2 films, which is significantly larger than the reported ones. The findings in this work open a new way to synthesize the novel and thermochromic W doped VO 2 films with facility and low cost. Therefore, it has extensive application to construct smart windows and electronic devices.

Porous silicon-VO{sub 2} based hybrids as possible optical temperature sensor: Wavelength-dependent optical switching from visible to near-infrared range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antunez, E. E.; Salazar-Kuri, U.; Estevez, J. O.

Morphological properties of thermochromic VO{sub 2}—porous silicon based hybrids reveal the growth of well-crystalized nanometer-scale features of VO{sub 2} as compared with typical submicron granular structure obtained in thin films deposited on flat substrates. Structural characterization performed as a function of temperature via grazing incidence X-ray diffraction and micro-Raman demonstrate reversible semiconductor-metal transition of the hybrid, changing from a low-temperature monoclinic VO{sub 2}(M) to a high-temperature tetragonal rutile VO{sub 2}(R) crystalline structure, coupled with a decrease in phase transition temperature. Effective optical response studied in terms of red/blue shift of the reflectance spectra results in a wavelength-dependent optical switching withmore » temperature. As compared to VO{sub 2} film over crystalline silicon substrate, the hybrid structure is found to demonstrate up to 3-fold increase in the change of reflectivity with temperature, an enlarged hysteresis loop and a wider operational window for its potential application as an optical temperature sensor. Such silicon based hybrids represent an exciting class of functional materials to display thermally triggered optical switching culminated by the characteristics of each of the constituent blocks as well as device compatibility with standard integrated circuit technology.« less

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model.

PubMed

Currie, Marc; Mastro, Michael A; Wheeler, Virginia D

2018-05-23

Vanadium dioxide is a material that has a reversible metal-insulator phase change near 68 °C. To grow VO2 on a wide variety of substrates, with wafer-scale uniformity and angstrom level control of thickness, the method of atomic-layer deposition was chosen. This ALD process enables high-quality, low-temperature (≤150 °C) growth of ultrathin films (100-1000 Å) of VO2. For this demonstration, the VO2 films were grown on sapphire substrates. This low temperature growth technique produces mostly amorphous VO2 films. A subsequent anneal in an ultra-high vacuum chamber with a pressure of 7x10 -4 Pa of ultra-high purity (99.999%) oxygen produced oriented, polycrystalline VO2 films. The crystallinity, phase, and strain of the VO2 were determined by Raman spectroscopy and X-ray diffraction, while the stoichiometry and impurity levels were determined by X-ray photoelectron spectroscopy, and finally the morphology was determined by atomic force microscopy. These data demonstrate the high-quality of the films grown by this technique. A model was created to fit to the data for VO2 in its metallic and insulating phases in the near infrared spectral region. The permittivity and refractive index of the ALD VO2 agreed well with the other fabrication methods in its insulating phase, but showed a difference in its metallic state. Finally, the analysis of the films' optical properties enabled the creation of a wavelength- and temperature-dependent model of the complex optical refractive index for developing VO2 as a tunable refractive index material.

Plasmonic enhancement of the vanadium dioxide phase transition induced by low-power laser irradiation

NASA Astrophysics Data System (ADS)

Ferrara, Davon W.; MacQuarrie, Evan R.; Diez-Blanco, Victor; Nag, Joyeeta; Kaye, Anthony B.; Haglund, Richard F.

2012-08-01

Nanocomposites consisting of gold nanoparticle (NP) arrays and vanadium dioxide (VO2) thin films are noteworthy for the tunability of both their thermal and optical properties. The localized surface plasmon resonance (LSPR) of the Au can be tuned when its dielectric environment is modulated by the semiconducting-to-metal phase transition (SMT) of the VO2; the LSPR itself can be altered by changing the shape of the NPs and the pitch of the NP array. In principle, then it should be possible to choose a combination of VO2 film and Au LSPR properties that maximizes the overall optical response of the nanocomposite. To demonstrate this effect, transient transmission measurements were conducted on lithographically fabricated arrays of Au NPs of diameter 140 nm, array spacing 350 nm, and covered with a 60 nm thick films of VO2 via pulsed laser deposition. Both Au::VO2 nanocomposites and bare VO2 film were irradiated with a shuttered 785 nm pump laser, and their optical response was probed at 1550 nm by a fixed-frequency diode laser. The Au::VO2 nanocomposite exhibited an increased effective absorption coefficient 1.5 times that of the plain film and required 37 % less laser power to induce the SMT. The time-dependent temperature rise in the film as a function of laser intensity was calculated from these measurements and compared with both analytic and finite-element models. Our results suggest that Au::VO2 nanocomposites may be useful in applications such as thermal-management coatings for energy efficient "smart" windows.

Highly efficient photocatalytic conversion of solar energy to hydrogen by WO3/BiVO4 core-shell heterojunction nanorods

NASA Astrophysics Data System (ADS)

Kosar, Sonya; Pihosh, Yuriy; Bekarevich, Raman; Mitsuishi, Kazutaka; Mawatari, Kazuma; Kazoe, Yutaka; Kitamori, Takehiko; Tosa, Masahiro; Tarasov, Alexey B.; Goodilin, Eugene A.; Struk, Yaroslav M.; Kondo, Michio; Turkevych, Ivan

2018-04-01

Photocatalytic splitting of water under solar light has proved itself to be a promising approach toward the utilization of solar energy and the generation of environmentally friendly fuel in a form of hydrogen. In this work, we demonstrate highly efficient solar-to-hydrogen conversion efficiency of 7.7% by photovoltaic-photoelectrochemical (PV-PEC) device based on hybrid MAPbI3 perovskite PV cell and WO3/BiVO4 core-shell nanorods PEC cell tandem that utilizes spectral splitting approach. Although BiVO4 is characterized by intrinsically high recombination rate of photogenerated carriers, this is not an issue for WO3/BiVO4 core-shell nanorods, where highly conductive WO3 cores are combined with extremely thin absorber BiVO4 shell layer. Since the BiVO4 layer is thinner than the characteristic carrier diffusion length, the photogenerated charge carriers are separated at the WO3/BiVO4 heterojunction before their recombination. Also, such architecture provides sufficient optical thickness even for extremely thin BiVO4 layer due to efficient light trapping in the core-shell WO3/BiVO4 nanorods with high aspect ratio. We also demonstrate that the concept of fill factor can be used to compare I-V characteristics of different photoanodes regarding their optimization for PV/PEC tandem devices.

Phase-selective vanadium dioxide (VO2) nanostructured thin films by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Masina, B. N.; Lafane, S.; Wu, L.; Akande, A. A.; Mwakikunga, B.; Abdelli-Messaci, S.; Kerdja, T.; Forbes, A.

2015-10-01

Thin films of monoclinic nanostructured vanadium dioxide are notoriously difficult to produce in a selective manner. To date, post-annealing, after pulsed laser deposition (PLD), has been used to revert the crystal phase or to remove impurities, and non-glass substrates have been employed, thus reducing the efficacy of the transparency switching. Here, we overcome these limitations in PLD by optimizing a laser-ablation and deposition process through optical imaging of the laser-induced plasma. We report high quality monoclinic rutile-type vanadium dioxide (VO2) (M1) nanoparticles without post-annealing, and on a glass substrate. Our samples demonstrate a reversible metal-to-insulator transition at ˜43 °C, without any doping, paving the way to switchable transparency in optical materials at room temperature.

Thermochromic VO2 thin films: solution-based processing, improved optical properties, and lowered phase transformation temperature.

PubMed

Zhang, Zongtao; Gao, Yanfeng; Chen, Zhang; Du, Jing; Cao, Chuanxiang; Kang, Litao; Luo, Hongjie

2010-07-06

This paper describes a solution-phase synthesis of high-quality vanadium dioxide thermochromic thin films. The films obtained showed excellent visible transparency and a large change in transmittance at near-infrared (NIR) wavelengths before and after the metal-insulator phase transition (MIPT). For a 59 nm thick single-layer VO(2) thin film, the integral values of visible transmittance (T(int)) for metallic (M) and semiconductive (S) states were 54.1% and 49.1%, respectively, while the NIR switching efficiencies (DeltaT) were as high as 50% at 2000 nm. Thinner films can provide much higher transmittance of visible light, but they suffer from an attenuation of the switching efficiency in the near-infrared region. By varying the film thickness, ultrahigh T(int) values of 75.2% and 75.7% for the M and S states, respectively, were obtained, while the DeltaT at 2000 nm remained high. These results represent the best data for VO(2) to date. Thicker films in an optimized range can give enhanced NIR switching efficiencies and excellent NIR blocking abilities; in a particularly impressive experiment, one film provided near-zero NIR transmittance in the switched state. The thickness-dependent performance suggests that VO(2) will be of great use in the objective-specific applications. The reflectance and emissivity at the wavelength range of 2.5-25 microm before and after the MIPT were dependent on the film thickness; large contrasts were observed for relatively thick films. This work also showed that the MIPT temperature can be reduced simply by selecting the annealing temperature that induces local nonstoichiometry; a MIPT temperature as low as 42.7 degrees C was obtained by annealing the film at 440 degrees C. These properties (the high visible transmittance, the large change in infrared transmittance, and the near room-temperature MIPT) suggest that the current method is a landmark in the development of this interesting material toward applications in energy-saving smart windows.

Quasiparticle Interference on Cubic Perovskite Oxide Surfaces.

PubMed

Okada, Yoshinori; Shiau, Shiue-Yuan; Chang, Tay-Rong; Chang, Guoqing; Kobayashi, Masaki; Shimizu, Ryota; Jeng, Horng-Tay; Shiraki, Susumu; Kumigashira, Hiroshi; Bansil, Arun; Lin, Hsin; Hitosugi, Taro

2017-08-25

We report the observation of coherent surface states on cubic perovskite oxide SrVO_{3}(001) thin films through spectroscopic-imaging scanning tunneling microscopy. A direct link between the observed quasiparticle interference patterns and the formation of a d_{xy}-derived surface state is supported by first-principles calculations. We show that the apical oxygens on the topmost VO_{2} plane play a critical role in controlling the coherent surface state via modulating orbital state.

C-oriented and {010} facets exposed BiVO4 nanowall films: template-free fabrication and their enhanced photoelectrochemical properties.

PubMed

Zhou, Min; Zhang, Shudong; Sun, Yongfu; Wu, Changzheng; Wang, Mingtai; Xie, Yi

2010-12-03

Vertically aligned BiVO(4) nanowall films on indium tin oxide (ITO) glass have been fabricated through a template-free hydrothermal method for the first time. Based on the structural understanding of both BiVO(4) and ITO, the lattice matches ({020}(BiVO4) and {040}(ITO), {200}(BiVO4) and {004}(ITO), respectively) and the similarity of metal atomic arrangement parallel to {001} planes turn out to be crucial for the fabrication of the nanowalls. Consequently, the growth of a BiVO(4) film begins from heteroepitaxy and undergoes an Ostwald ripening process to form an extended network, resulting in a c-orientation and exposing {010} facets. Through this process, it is much easier to obtain a range of nanowall films with different packing densities, as the surface state of ITO glass is alterable by adjusting the concentration of acid. The films can be directly used as an electrode, which exhibits an excellent response to visible light, especially light with low intensity, allowing for the electrical interconnection, highly active surface, appropriate orientation, and a good contact with the substrate. There are great benefits in improving the technique for detecting the weak light source signals.

VO{sub 2} (A): Reinvestigation of crystal structure, phase transition and crystal growth mechanisms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rao Popuri, Srinivasa; University of Bordeaux, ICMCB, UPR 9048, F-33608 Pessac; National Institute for Research and Development in Electrochemistry and Condensed Matter, Timisoara, Plautius Andronescu Str. No. 1, 300224 Timisoara

2014-05-01

Well crystallized VO{sub 2} (A) microrods were grown via a single step hydrothermal reaction in the presence of V{sub 2}O{sub 5} and oxalic acid. With the advantage of high crystalline samples, we propose P4/ncc as an appropriate space group at room temperature. From morphological studies, we found that the oriented attachment and layer by layer growth mechanisms are responsible for the formation of VO{sub 2} (A) micro rods. The structural and electronic transitions in VO{sub 2} (A) are strongly first order in nature, and a marked difference between the structural transition temperatures and electronic transitions temperature was evidenced. The reversiblemore » intra- (LTP-A to HTP-A) and irreversible inter- (HTP-A to VO{sub 2} (M1)) structural phase transformations were studied by in-situ powder X-ray diffraction. Attempts to increase the size of the VO{sub 2} (A) microrods are presented and the possible formation steps for the flower-like morphologies of VO{sub 2} (M1) are described. - Graphical abstract: Using a single step and template free hydrothermal synthesis, well crystallized VO{sub 2} (A) microrods were prepared and the P4/ncc space group was assigned to the room temperature crystal structure. Reversible and irreversible phase transitions among different VO{sub 2} polymorphs were identified and their progressive nature was highlighted. Attempts to increase the microrods size, involving layer by layer formation mechanisms, are presented. - Highlights: • Highly crystallized VO{sub 2} (A) microrods were grown via a single step hydrothermal process. • The P4/ncc space group was determined for VO{sub 2} (A) at room temperature. • The electronic structure and progressive nature of the structural phase transition were investigated. • A weak coupling between structural and electronic phase transitions was identified. • Different crystallite morphologies were discussed in relation with growth mechanisms.« less

Wafer-scale growth of VO2 thin films using a combinatorial approach

PubMed Central

Zhang, Hai-Tian; Zhang, Lei; Mukherjee, Debangshu; Zheng, Yuan-Xia; Haislmaier, Ryan C.; Alem, Nasim; Engel-Herbert, Roman

2015-01-01

Transition metal oxides offer functional properties beyond conventional semiconductors. Bridging the gap between the fundamental research frontier in oxide electronics and their realization in commercial devices demands a wafer-scale growth approach for high-quality transition metal oxide thin films. Such a method requires excellent control over the transition metal valence state to avoid performance deterioration, which has been proved challenging. Here we present a scalable growth approach that enables a precise valence state control. By creating an oxygen activity gradient across the wafer, a continuous valence state library is established to directly identify the optimal growth condition. Single-crystalline VO2 thin films have been grown on wafer scale, exhibiting more than four orders of magnitude change in resistivity across the metal-to-insulator transition. It is demonstrated that ‘electronic grade' transition metal oxide films can be realized on a large scale using a combinatorial growth approach, which can be extended to other multivalent oxide systems. PMID:26450653

Preparation of VO2 thin film and its direct optical bit recording characteristics.

PubMed

Fukuma, M; Zembutsu, S; Miyazawa, S

1983-01-15

Vanadium dioxide (VO2) film which has nearly the same transition point as single crystal has been obtained by reactive evaporation of vanadium on glass and subsequent annealing in N2 gas. Relations between optical properties of V02 film and its preparation conditions are presented. We made optical direct bit recording on V02 film using a laser diode as the light source. The threshold recording energy and bit density are 2 mJ/cm 2 and 350 bits/mm, respectively. We also made tungsten doping to lower the V02 film transition temperature.

Thermal tuning of infrared resonant absorbers based on hybrid gold-VO{sub 2} nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kocer, Hasan; Department of Electrical Engineering, Turkish Military Academy, 06654 Ankara; Butun, Serkan

2015-04-20

Resonant absorbers based on plasmonic materials, metamaterials, and thin films enable spectrally selective absorption filters, where absorption is maximized at the resonance wavelength. By controlling the geometrical parameters of nano/microstructures and materials' refractive indices, resonant absorbers are designed to operate at wide range of wavelengths for applications including absorption filters, thermal emitters, thermophotovoltaic devices, and sensors. However, once resonant absorbers are fabricated, it is rather challenging to control and tune the spectral absorption response. Here, we propose and demonstrate thermally tunable infrared resonant absorbers using hybrid gold-vanadium dioxide (VO{sub 2}) nanostructure arrays. Absorption intensity is tuned from 90% to 20%more » and 96% to 32% using hybrid gold-VO{sub 2} nanowire and nanodisc arrays, respectively, by heating up the absorbers above the phase transition temperature of VO{sub 2} (68 °C). Phase change materials such as VO{sub 2} deliver useful means of altering optical properties as a function of temperature. Absorbers with tunable spectral response can find applications in sensor and detector applications, in which external stimulus such as heat, electrical signal, or light results in a change in the absorption spectrum and intensity.« less

Facile and Low-Temperature Fabrication of Thermochromic Cr2O3/VO2 Smart Coatings: Enhanced Solar Modulation Ability, High Luminous Transmittance and UV-Shielding Function.

PubMed

Chang, Tianci; Cao, Xun; Li, Ning; Long, Shiwei; Gao, Xiang; Dedon, Liv R; Sun, Guangyao; Luo, Hongjie; Jin, Ping

2017-08-09

In the pursuit of energy efficient materials, vanadium dioxide (VO 2 ) based smart coatings have gained much attention in recent years. For smart window applications, VO 2 thin films should be fabricated at low temperature to reduce the cost in commercial fabrication and solve compatibility problems. Meanwhile, thermochromic performance with high luminous transmittance and solar modulation ability, as well as effective UV shielding function has become the most important developing strategy for ideal smart windows. In this work, facile Cr 2 O 3 /VO 2 bilayer coatings on quartz glasses were designed and fabricated by magnetron sputtering at low temperatures ranging from 250 to 350 °C as compared with typical high growth temperatures (>450 °C). The bottom Cr 2 O 3 layer not only provides a structural template for the growth of VO 2 (R), but also serves as an antireflection layer for improving the luminous transmittance. It was found that the deposition of Cr 2 O 3 layer resulted in a dramatic enhancement of the solar modulation ability (56.4%) and improvement of luminous transmittance (26.4%) when compared to single-layer VO 2 coating. According to optical measurements, the Cr 2 O 3 /VO 2 bilayer structure exhibits excellent optical performances with an enhanced solar modulation ability (ΔT sol = 12.2%) and a high luminous transmittance (T lum,lt = 46.0%), which makes a good balance between ΔT sol and T lum for smart windows applications. As for UV-shielding properties, more than 95.8% UV radiation (250-400 nm) can be blocked out by the Cr 2 O 3 /VO 2 structure. In addition, the visualized energy-efficient effect was modeled by heating a beaker of water using infrared imaging method with/without a Cr 2 O 3 /VO 2 coating glass.

Coding of Velocity Storage in the Vestibular Nuclei.

PubMed

Yakushin, Sergei B; Raphan, Theodore; Cohen, Bernard

2017-01-01

Semicircular canal afferents sense angular acceleration and output angular velocity with a short time constant of ≈4.5 s. This output is prolonged by a central integrative network, velocity storage that lengthens the time constants of eye velocity. This mechanism utilizes canal, otolith, and visual (optokinetic) information to align the axis of eye velocity toward the spatial vertical when head orientation is off-vertical axis. Previous studies indicated that vestibular-only (VO) and vestibular-pause-saccade (VPS) neurons located in the medial and superior vestibular nucleus could code all aspects of velocity storage. A recently developed technique enabled prolonged recording while animals were rotated and received optokinetic stimulation about a spatial vertical axis while upright, side-down, prone, and supine. Firing rates of 33 VO and 8 VPS neurons were studied in alert cynomolgus monkeys. Majority VO neurons were closely correlated with the horizontal component of velocity storage in head coordinates, regardless of head orientation in space. Approximately, half of all tested neurons (46%) code horizontal component of velocity in head coordinates, while the other half (54%) changed their firing rates as the head was oriented relative to the spatial vertical, coding the horizontal component of eye velocity in spatial coordinates. Some VO neurons only coded the cross-coupled pitch or roll components that move the axis of eye rotation toward the spatial vertical. Sixty-five percent of these VO and VPS neurons were more sensitive to rotation in one direction (predominantly contralateral), providing directional orientation for the subset of VO neurons on either side of the brainstem. This indicates that the three-dimensional velocity storage integrator is composed of directional subsets of neurons that are likely to be the bases for the spatial characteristics of velocity storage. Most VPS neurons ceased firing during drowsiness, but the firing rates of VO neurons were unaffected by states of alertness and declined with the time constant of velocity storage. Thus, the VO neurons are the prime components of the mechanism of coding for velocity storage, whereas the VPS neurons are likely to provide the path from the vestibular to the oculomotor system for the VO neurons.

Coding of Velocity Storage in the Vestibular Nuclei

PubMed Central

Yakushin, Sergei B.; Raphan, Theodore; Cohen, Bernard

2017-01-01

Semicircular canal afferents sense angular acceleration and output angular velocity with a short time constant of ≈4.5 s. This output is prolonged by a central integrative network, velocity storage that lengthens the time constants of eye velocity. This mechanism utilizes canal, otolith, and visual (optokinetic) information to align the axis of eye velocity toward the spatial vertical when head orientation is off-vertical axis. Previous studies indicated that vestibular-only (VO) and vestibular-pause-saccade (VPS) neurons located in the medial and superior vestibular nucleus could code all aspects of velocity storage. A recently developed technique enabled prolonged recording while animals were rotated and received optokinetic stimulation about a spatial vertical axis while upright, side-down, prone, and supine. Firing rates of 33 VO and 8 VPS neurons were studied in alert cynomolgus monkeys. Majority VO neurons were closely correlated with the horizontal component of velocity storage in head coordinates, regardless of head orientation in space. Approximately, half of all tested neurons (46%) code horizontal component of velocity in head coordinates, while the other half (54%) changed their firing rates as the head was oriented relative to the spatial vertical, coding the horizontal component of eye velocity in spatial coordinates. Some VO neurons only coded the cross-coupled pitch or roll components that move the axis of eye rotation toward the spatial vertical. Sixty-five percent of these VO and VPS neurons were more sensitive to rotation in one direction (predominantly contralateral), providing directional orientation for the subset of VO neurons on either side of the brainstem. This indicates that the three-dimensional velocity storage integrator is composed of directional subsets of neurons that are likely to be the bases for the spatial characteristics of velocity storage. Most VPS neurons ceased firing during drowsiness, but the firing rates of VO neurons were unaffected by states of alertness and declined with the time constant of velocity storage. Thus, the VO neurons are the prime components of the mechanism of coding for velocity storage, whereas the VPS neurons are likely to provide the path from the vestibular to the oculomotor system for the VO neurons. PMID:28861030

The electro-optic mechanism and infrared switching dynamic of the hybrid multilayer VO2/Al:ZnO heterojunctions.

PubMed

Zhang, Peng; Zhang, Wu; Wang, Junyong; Jiang, Kai; Zhang, Jinzhong; Li, Wenwu; Wu, Jiada; Hu, Zhigao; Chu, Junhao

2017-06-30

Active and widely controllable phase transition optical materials have got rapid applications in energy-efficient electronic devices, field of meta-devices and so on. Here, we report the optical properties of the vanadium dioxide (VO 2 )/aluminum-doped zinc oxide (Al:ZnO) hybrid n-n type heterojunctions and the corresponding electro-optic performances of the devices. Various structures are fabricated to compare the discrepancy of the optical and electrical characteristics. It was found that the reflectance spectra presents the wheel phenomenon rather than increases monotonically with temperature at near-infrared region range. The strong interference effects was found in the hybrid multilayer heterojunction. In addition, the phase transition temperature decreases with increasing the number of the Al:ZnO layer, which can be ascribed to the electron injection to the VO 2 film from the Al:ZnO interface. Affected by the double layer Al:ZnO, the abnormal Raman vibration mode was presented in the insulator region. By adding the external voltage on the Al 2 O 3 /Al:ZnO/VO 2 /Al:ZnO, Al 2 O 3 /Al:ZnO/VO 2 and Al 2 O 3 /VO 2 /Al:ZnO thin-film devices, the infrared optical spectra of the devices can be real-time manipulated by an external voltage. The main effect of joule heating and assistant effect of electric field are illustrated in this work. It is believed that the results will add a more thorough understanding in the application of the VO 2 /transparent conductive film device.

Variation of optical properties of gel-derived VO2 thin films with temperature

NASA Astrophysics Data System (ADS)

Hou, Lisong; Lu, Song W.; Gan, Fuxi

1991-11-01

VO2 thin films are prepared on three kinds of substrates by the sol-gel dip-coating method followed by heat treatment under vacuum conditions. The IR and UV-visible spectra of the films are studied during heating and cooling between room temperature and 100 degree(s)C. The experimental results show that the films exhibit thermally-induced reversible phase transition and, as a result, the maximum changes in transmittance and reflectivity are 58% and 25%, respectively, in the case of vacuum heat treatment at 400 degree(s)C and silica glass substrates. The refractive index n decreases and the extinction coefficient k increases when heating these films from room temperature to 100 degree(s)C, and vice versa. The reasons why the optical constants and IR absorption spectra change so remarkably are discussed.

Phase-selective vanadium dioxide (VO{sub 2}) nanostructured thin films by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Masina, B. N., E-mail: BMasina@csir.co.za, E-mail: slafane@cdta.dz; School of Physics, University of KwaZulu-Natal, Private Bag X54001, Durban 4000; Lafane, S., E-mail: BMasina@csir.co.za, E-mail: slafane@cdta.dz

2015-10-28

Thin films of monoclinic nanostructured vanadium dioxide are notoriously difficult to produce in a selective manner. To date, post-annealing, after pulsed laser deposition (PLD), has been used to revert the crystal phase or to remove impurities, and non-glass substrates have been employed, thus reducing the efficacy of the transparency switching. Here, we overcome these limitations in PLD by optimizing a laser-ablation and deposition process through optical imaging of the laser-induced plasma. We report high quality monoclinic rutile-type vanadium dioxide (VO{sub 2}) (M1) nanoparticles without post-annealing, and on a glass substrate. Our samples demonstrate a reversible metal-to-insulator transition at ∼43 °C, withoutmore » any doping, paving the way to switchable transparency in optical materials at room temperature.« less

Multipass pumped Nd-based thin-disk lasers: continuous-wave laser operation at 1.06 and 0.9 {mu}m with intracavity frequency doubling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavel, Nicolaie; Luenstedt, Kai; Petermann, Klaus

2007-12-01

The laser performances of the 1.06 {mu}m 4F3/2 --> 4I11/2 four-level transition and of the 0.9 {mu}m 4F3/2 --> I9/24 quasi-three-level transition were investigated using multipass pumped Nd-based media in thin-disk geometry. When pumping at 0.81 {mu}m into the 4F5/2 level, continuous-wave laser operation was obtained with powers in excess of 10 W at 1.06 {mu}m, in the multiwatt region at 0.91 {mu}m in Nd:YVO4 and Nd:GdVO4, and at 0.95 {mu}m in Nd:YAG. Intracavity frequency-doubled Nd:YVO4 thin-disk lasers with output powers of 6.4 W at 532 nm and of 1.6 W at 457 nm were realized at this pumping wavelength.more » The pumping at 0.88 {mu}m, which is directed into the 4F3/2 emitting level, was also employed, and Nd:YVO4 and Nd:GdVO4 thin-disk lasers with {approx}9 W output power at 1.06 {mu}m and visible laser radiation at 0.53 {mu}m with output power in excess of 4 W were realized. Frequency-doubled Nd:vanadate thin-disk lasers with deep blue emission at 0.46 {mu}m were obtained under pumping directly into the 4F3/2 emitting level.« less

A cost-effective process to prepare VO{sub 2} (M) powder and films with superior thermochromic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Xiudi; Zhang, Hua; Chai, Guanqi

2014-03-01

Graphical abstract: Combining codeposition and short time post annealing, VO{sub 2} (M) with high quality and excellent phase transition performance is obtained. After mixing the VO{sub 2} powder with acrylic resin, the composite films deposited on glass show superior visible transmission and solar modulation, which can be used as an excellent candidate of low cost smart window in energy saving field. - Highlights: • The VO{sub 2} powder obtained by short time thermolysis method is high purity and crystallinity with superior phase transition performance. • The maximum decreasing efficiency of phase transition temperature is about −30 K/at% with w =more » 0.4 at%. • After mixing VO{sub 2} powder with acrylic resin, the maximal visible transmission of the composite films is 48% and the transmission modulation at 2000 nm is 37.3% with phase transition temperature of 66.2 °C. • Though the phase transition performance is weakened by tungsten doping, the film prepared by 1.3 at% tungsten doped VO{sub 2} still show superior transmission modulation about 26.4%, which means that it is a potential candidate as smart windows. - Abstract: VO{sub 2} powder with superior phase transition performance was prepared by convenient thermolysis method. The results illustrated that VO{sub 2} powder show high purity and crystallinity. VO{sub 2} particles are transformed from cluster to quasi-sphere with the increase of annealing temperature. The DSC analysis proves that VO{sub 2} show superior phase transition performance around 68 °C. The phase transition temperature can be reduced to 33.5 °C by 1.8 at% tungsten doping. The maximum decreasing efficiency of phase transition temperature is about −30 K/at% with w = 0.4 at%. After mixing VO{sub 2} powder with acrylic resin, the maximal visible transmission of the composite thin films on glass is 48% and the transmission modulation at 2000 nm is 37.3% with phase transition temperature of 66.2 °C. Though the phase transition performance is weakened by tungsten doping, the film prepared by 1.3 at% tungsten doped VO{sub 2} still show superior transmission modulation about 26.4% at 2000 nm, which means that it is a potential candidate as smart windows.« less

Combined strain and composition-induced effects in the metal-insulator transition of epitaxial VO2 films

NASA Astrophysics Data System (ADS)

Théry, V.; Boulle, A.; Crunteanu, A.; Orlianges, J. C.

2017-12-01

The role of epitaxial strain, thermal strain, and bulk (strain-free) lattice parameters in the metal-insulator transition (MIT) and the structural phase transition (SPT) of VO2 is investigated for the case of epitaxial films grown on (001)-oriented TiO2 substrates. Temperature-resolved X-ray reciprocal space mapping has been used to determine the absolute state of strain as well as the bulk lattice parameters of VO2 at 100 °C. For the thinnest film (15 nm), the state of strain is dominated by the film/substrate lattice mismatch yielding an in-plane tensile strain which, in turn, shifts both the MIT and the SPT towards lower temperatures. Conversely, for the thickest film (100 nm), the epitaxial strain is relaxed, so that the state of strain is dominated by the VO2/TiO2 thermal expansion mismatch which is responsible for a compressive in-plane strain. In all cases, a swelling of the strain-free VO2 unit-cell is observed which indicates the presence of interfacial oxygen vacancies and/or Ti diffusion into the VO2 films. The presence of oxygen vacancies stabilizes the metallic rutile phase and counterbalances the action of thermal strain on the MIT and the SPT and degrades the electric properties for the thinnest film. For the thickest film, the resistivity ratio is 6.4 × 104.

Vanadium dioxide film protected with an atomic-layer-deposited Al{sub 2}O{sub 3} thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xiao; Cao, Yunzhen, E-mail: yzhcao@mail.sic.ac.cn; Yang, Chao

2016-01-15

A VO{sub 2} film exposed to ambient air is prone to oxidation, which will degrade its thermochromic properties. In this work, the authors deposited an ultrathin Al{sub 2}O{sub 3} film with atomic layer deposition (ALD) to protect the underlying VO{sub 2} film from degradation, and then studied the morphology and crystalline structure of the films. To assess the protectiveness of the Al{sub 2}O{sub 3} capping layer, the authors performed a heating test and a damp heating test. An ultrathin 5-nm-thick ALD Al{sub 2}O{sub 3} film was sufficient to protect the underlying VO{sub 2} film heated at 350 °C. However, in amore » humid environment at prolonged durations, a thicker ALD Al{sub 2}O{sub 3} film (15 nm) was required to protect the VO{sub 2}. The authors also deposited and studied a TiO{sub 2}/Al{sub 2}O{sub 3} bilayer, which significantly improved the protectiveness of the Al{sub 2}O{sub 3} film in a humid environment.« less

Adhesion characteristics of VO2 ink film sintered by intense pulsed light for smart window

NASA Astrophysics Data System (ADS)

Youn, Ji Won; Lee, Seok-Jae; Kim, Kwang-Seok; Kim, Dae Up

2018-05-01

Progress in the development of energy-efficient coatings on glass has led to the research of smart windows that can modulate solar energy in response to an external stimulus like light, heat, or electricity. Thermochromic smart windows have attracted great interest because they provide highly visible transparency and intelligently controllable solar heat. VO2 has been widely used as coating material for thermochromism owing to its reversible metal-to-insulator transition near room temperature. However, unstable crystalline phases and expensive fabrication processes of VO2 films limit their facile application in smart windows. To overcome these restrictions, we manufactured nanoinks based on VO2 nanoparticles and fabricated films using spin coating and intense pulsed light (IPL) sintering on a quartz substrate. We examined adhesion between the VO2 nanoink films and the quartz substrate by varying the applied voltages and the number of pulses. The average adhesion of thin films increased to 83 and 108 N/m as the applied voltage during IPL sintering increased from 1400 to 2000 V. By increasing the number of pulses from 5 to 20, the adhesive strength increased from 83 to 94 N/m at 1400 V, and decreased from 108 to 96 N/m at 2000 V voltage.

Local probing of thermal energy transfer and conversion processes in VO2 nanostructures

NASA Astrophysics Data System (ADS)

Menges, Fabian

Nanostructures of strongly correlated materials, such as metal-insulator transition (MIT) oxides, enable unusual coupling of charge and heat transport. Hence, they provide an interesting pathway to the development of non-linear thermal devices for active heat flux control. Here, we will report the characterization of local thermal non-equilibrium processes in vanadium dioxide (VO2) thin films and single-crystalline nanobeams. Using a scanning thermal microscope and calorimetric MEMS platforms, we studied the MIT triggered by electrical currents, electrical fields, near-field thermal radiation and thermal conduction. Based on out recently introduced scanning probe thermometry method, which enables direct imaging of local Joule and Peltier effects, we quantified self-heating processes in VO2 memristors using the tip of a resistively heated scanning probe both as local sensor and nanoscopic heat source. Finally, we will report on recent approaches to build radiative thermal switches and oscillators using VO2 nanostructures. We quantified variations of near-field radiative thermal transport between silicon dioxide and VO2 down to nanoscopic gap sizes, and will discuss its implications for the development of phonon polariton based radiative thermal devices. Funding of the Swiss Federal Office of Energy under Grant Agreement No. SI/501093-01 is gratefully acknowledged.

Voltage- and current-activated metal-insulator transition in VO2-based electrical switches: a lifetime operation analysis.

PubMed

Crunteanu, Aurelian; Givernaud, Julien; Leroy, Jonathan; Mardivirin, David; Champeaux, Corinne; Orlianges, Jean-Christophe; Catherinot, Alain; Blondy, Pierre

2010-12-01

Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal-insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal-insulator transition in VO 2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs) in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO 2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO 2 -based switching (more than 260 million cycles without failure) compared with the voltage-activated mode (breakdown at around 16 million activation cycles). The evolution of the electrical self-oscillations of a VO 2 -based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eaton, Craig; Brahlek, Matthew; Engel-Herbert, Roman, E-mail: rue2@psu.edu

The authors report the growth of stoichiometric SrVO{sub 3} thin films on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (001) substrates using hybrid molecular beam epitaxy. This growth approach employs a conventional effusion cell to supply elemental A-site Sr and the metalorganic precursor vanadium oxytriisopropoxide (VTIP) to supply vanadium. Oxygen is supplied in its molecular form through a gas inlet. An optimal VTIP:Sr flux ratio has been identified using reflection high-energy electron-diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy, demonstrating stoichiometric SrVO{sub 3} films with atomically flat surface morphology. Away from the optimal VTIP:Sr flux, characteristic changes inmore » the crystalline structure and surface morphology of the films were found, enabling identification of the type of nonstoichiometry. For optimal VTIP:Sr flux ratios, high quality SrVO{sub 3} thin films were obtained with smallest deviation of the lattice parameter from the ideal value and with atomically smooth surfaces, indicative of the good cation stoichiometry achieved by this growth technique.« less

Vanadium Oxide Thin Films Alloyed with Ti, Zr, Nb, and Mo for Uncooled Infrared Imaging Applications

NASA Astrophysics Data System (ADS)

Ozcelik, Adem; Cabarcos, Orlando; Allara, David L.; Horn, Mark W.

2013-05-01

Microbolometer-grade vanadium oxide (VO x ) thin films with 1.3 < x < 2.0 were prepared by pulsed direct-current (DC) sputtering using substrate bias in a controlled oxygen and argon environment. These films were systematically alloyed with Ti, Nb, Mo, and Zr using a second gun and radiofrequency (RF) reactive co-sputtering to probe the effects of the transition metals on the film charge transport characteristics. The results reveal that the temperature coefficient of resistance (TCR) and resistivity are unexpectedly similar for alloyed and unalloyed films up to alloy compositions in the ˜20 at.% range. Analysis of the film structures for the case of the 17% Nb-alloyed film by glancing-angle x-ray diffraction and transmission electron microscopy shows that the microstructure remains even with the addition of high concentrations of alloy metal, demonstrating the robust character of the VO x films to maintain favorable electrical transport properties for bolometer applications. Postdeposition thermal annealing of the alloyed VO x films further reveals improvement of electrical properties compared with unalloyed films, indicating a direction for further improvements in the materials.

An improved scan laser with a VO2 programmable mirror

NASA Astrophysics Data System (ADS)

Chivian, J. S.; Scott, M. W.; Case, W. E.; Krasutsky, N. J.

1985-04-01

A 10.6-microns scan laser has been constructed and operated with an off-axis cathode ray tube, high reflectance multilayer thin-film structures, and a tapered plasma discharge tube. Equations are given for the switching time of a high-reflectance spot on the VO2 and for the relation of scan laser output power to cavity geometry, cavity losses, and the gain of the active CO2 medium. A scan capability of 2100 easily resolvable directions was demonstrated, and sequential and randomly addressed spot rates of 100,000/sec were achieved. The equations relating output power and cavity mode size were experimentally verified using a nonscanned beam.

New Insights into the Diverse Electronic Phases of a Novel Vanadium Dioxide Polymorph: A Terahertz Spectroscopy Study

PubMed Central

Lourembam, James; Srivastava, Amar; La-o-vorakiat, Chan; Rotella, H.; Venkatesan, T.; Chia, Elbert E. M.

2015-01-01

A remarkable feature of vanadium dioxide is that it can be synthesized in a number of polymorphs. The conductivity mechanism in the metastable layered polymorph VO2(B) thin films has been investigated by terahertz time-domain spectroscopy (THz-TDS). In VO2(B), a critical temperature of 240 K marks the appearance of a non-zero Drude term in the observed complex conductivity, indicating the evolution from a pure insulating state towards a metallic state. In contrast, the THz conductivity of the well-known VO2(M1) is well fitted only by a modification of the Drude model to include backscattering. We also identified two different THz conductivity regimes separated by temperature in these two polymorphs. The electronic phase diagram is constructed, revealing that the width and onset of the metal-insulator transition in the B phase develop differently from the M1 phase. PMID:25777320

VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

PubMed Central

Zhang, Dong; Sun, Hong-Jun; Wang, Min-Huan; Miao, Li-Hua; Liu, Hong-Zhu; Zhang, Yu-Zhi; Bian, Ji-Ming

2017-01-01

Vanadium dioxide (VO2) thermochromic thin films with various thicknesses were grown on quartz glass substrates by radio frequency (RF)-plasma assisted oxide molecular beam epitaxy (O-MBE). The crystal structure, morphology and chemical stoichiometry were investigated systemically by X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) analyses. An excellent reversible metal-to-insulator transition (MIT) characteristics accompanied by an abrupt change in both electrical resistivity and optical infrared (IR) transmittance was observed from the optimized sample. Remarkably, the transition temperature (TMIT) deduced from the resistivity-temperature curve was reasonably consistent with that obtained from the temperature-dependent IR transmittance. Based on Raman measurement and XPS analyses, the observations were interpreted in terms of residual stresses and chemical stoichiometry. This achievement will be of great benefit for practical application of VO2-based smart windows. PMID:28772673

Thermal Instability Induced Oriented 2D Pores for Enhanced Sodium Storage.

PubMed

Kong, Lingjun; Xie, Chen-Chao; Gu, Haichen; Wang, Chao-Peng; Zhou, Xianlong; Liu, Jian; Zhou, Zhen; Li, Zhao-Yang; Zhu, Jian; Bu, Xian-He

2018-04-19

Hierarchical porous structures are highly desired for various applications. However, it is still challenging to obtain such materials with tunable architectures. Here, this paper reports hierarchical nanomaterials with oriented 2D pores by taking advantages of thermally instable bonds in vanadium-based metal-organic frameworks (MOFs). High-temperature calcination of these MOFs accompanied by the loss of coordinated water molecules and other components enables the formation of orderly slit-like 2D pores in vanadium oxide/porous carbon nanorods (VO x /PCs). This unique combination leads to an increase of the reactive surface area. In addition, optimized VO x /PCs demonstrate high-rate capability and ultralong cycling life for sodium storage. The assembled full cells also show high capacity and cycling stability. This report provides an effective strategy for producing MOFs-derived composites with hierarchical porous architectures for energy storage. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Deposition and characterization of stoichiometric films of V2O5 on Pd(111)

NASA Astrophysics Data System (ADS)

Feng, Xu; Abdel-Rahman, Mohammed K.; Kruppe, Christopher M.; Trenary, Michael

2017-10-01

A simple and efficient method has been used to grow V2O5 thin films on Pd(111) at a substrate temperature of 300 K through physical vapor deposition by heating a fine powder of V2O5 in a non-oxidative, UHV environment. X-ray photoelectron spectroscopy (XPS), reflection absorption infrared spectroscopy (RAIRS) and low energy electron diffraction (LEED) were used to characterize the thin films. When the as-grown films exceed a minimum thickness, characteristic features of V2O5 were revealed by XPS and RAIRS, which confirms the presence of stoichiometric V2O5. LEED indicates no long range order of the as-grown films at 300 K. Annealing to temperatures between 600 and 700 K causes a reduction of V2O5 to VO2 as identified by XPS and the formation of ordered structures as determined by LEED, and VO2 is predominant after annealing to 800 K. After further annealing to 1000 K, only an ordered form of V2O3 is present on Pd(111).

The role of postural control in the association between aerobic capacity and walking capacity in chronic stroke: a cross-sectional analysis.

PubMed

Outermans, Jacqueline C; van de Port, Ingrid; Kwakkel, Gert; Visser-Meily, Johanna M; Wittink, Harriet

2018-03-12

Reports on the association between aerobic capacity and walking capacity in people after stroke show disparate results. To determine (1) if the predictive validity of peak oxygen uptake (VO2peak) for walking capacity post stroke is different from that of maximal oxygen uptake (VO2max) and (2) if postural control, hemiplegic lower extremity muscle strength, age and gender distort the association between aerobic capacity and walking capacity. Cross-sectional study. General community in Utrecht, the Netherlands. Community-dwelling people more than three months after stroke. Measurement of aerobic capacity were performed with cardiopulmonary exercise testing (CPET) and differentiated between the achievement of VO2peak or VO2max. Measurement of walking capacity with the Six Minute Walk Test (6MWT), postural control with the Performance Oriented Mobility Assessment (POMA) and hemiplegic lower extremity muscle strength with the Motricity Index (MI-LE). Fifty-one out of 62 eligible participants, aged 64.7 (±12.5) years were included. Analysis of covariance (ANCOVA) showed a nonsignificant difference between the predictive validities of VO2max (N = 22, β = 0.56; 95%CI 0.12 - 0.97) and VO2peak (N = 29, β = 0.72; 95%CI 0.38 - 0.92). Multiple regression analysis of the pooled sample showed a significant decrease in the β value of VO2peak (21.6%) for the 6MWT when adding the POMA as a covariate in the association model. VO2peak remained significantly related to 6MWT after correcting for the POMA (β = 0.56 (95%CI 0.39 - 0.75)) CONCLUSIONS: The results suggest similar predictive validity of aerobic capacity for walking capacity in participants achieving VO2max compared to those only achieving VO2peak. Postural control confounds the association between aerobic capacity and walking capacity. Aerobic capacity remains a valid predictor of walking capacity. Aerobic capacity is an important factor associated with walking capacity after stroke. However, to understand this relationship, postural control needs to be measured. Both aerobic capacity and postural control may need to be addressed during interventions aiming to improve walking capacity after stroke.

Oxygen-vacancy-mediated dielectric property in perovskite Eu0.5Ba0.5TiO3-δ epitaxial thin films

NASA Astrophysics Data System (ADS)

Li, Weiwei; Gu, Junxing; He, Qian; Zhang, Kelvin H. L.; Wang, Chunchang; Jin, Kuijuan; Wang, Yongqiang; Acosta, Matias; Wang, Haiyan; Borisevich, Albina Y.; MacManus-Driscoll, Judith L.; Yang, Hao

2018-04-01

Dielectric relaxation in ABO3 perovskite oxides can result from many different charge carrier-related phenomena. Despite a strong understanding of dielectric relaxations, a detailed investigation of the relationship between the content of oxygen vacancies (VO) and dielectric relaxation has not been performed in perovskite oxide films. In this work, we report a systematic investigation of the influence of the VO concentration on the dielectric relaxation of Eu0.5Ba0.5TiO3-δ epitaxial thin films. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen concentration in Eu0.5Ba0.5TiO3-δ films. We found that dipolar defects created by VO interact with the off-centered Ti ions, which results in the dielectric relaxation in Eu0.5Ba0.5TiO3-δ films. Activation energy gradually increases with the increasing content of VO. The present work significantly extends our understanding of relaxation properties in oxide films.

Oxidation State Discrimination in the Atomic Layer Deposition of Vanadium Oxides

DOE PAGES

Weimer, Matthew S.; Kim, In Soo; Guo, Peijun; ...

2017-06-02

We describe the use of a vanadium 3+ precursor for atomic layer deposition (ALD) of thin films that span the common oxidation states of vanadium oxides. Self-limiting surface synthesis of V 2O 3, VO 2, and V 2O 5 are realized via four distinct reaction mechanisms accessed via judicious choice of oxygen ALD partners. In situ quartz crystal microbalance and quadrupole mass spectrometry were used to study the reaction mechanism of the vanadium precursor with O 3, H 2O 2, H 2O/O 2, and H 2O 2/H 2. A clear distinction between non-oxidative protic ligand exchange and metal oxidation ismore » demonstrated through sequential surface reactions with different non-metal precursors. This synergistic effect, provides greater control of the resultant metal species in the film, as well as reactive surface species during growth. In an extension of this approach, we introduce oxidation state control through reducing equivalents of H 2 gas. When H 2 is dosed after H 2O 2 during growth, amorphous films of VO 2 are deposited that are readily crystallized with a low temperature anneal. These VO 2 films show a temperature dependent Raman spectroscopy response in the expected range and consistent with the well-known phase-change behavior of VO 2.« less

Radiation-based near-field thermal rectification with phase transition materials

NASA Astrophysics Data System (ADS)

Yang, Yue; Basu, Soumyadipta; Wang, Liping

2013-10-01

The capability of manipulating heat flow has promising applications in thermal management and thermal circuits. In this Letter, we report strong thermal rectification effect based on the near-field thermal radiation between silicon dioxide (SiO2) and a phase transition material, vanadium dioxide (VO2), separated by nanometer vacuum gaps under the framework of fluctuational electrodynamics. Strong coupling of surface phonon polaritons between SiO2 and insulating VO2 leads to enhanced near-field radiative transfer, which on the other hand is suppressed when VO2 becomes metallic, resulting in thermal rectification. The rectification factor is close to 1 when vacuum gap is at 1 μm and it increases to almost 2 at sub-20-nm gaps when emitter and receiver temperatures are set to 400 and 300 K, respectively. Replacing bulk SiO2 with a thin film of several nanometers, rectification factor of 3 can be achieved when the vacuum gap is around 100 nm.

Photoelectrochemical performance of W-doped BiVO4 thin films deposited by spray pyrolysis

NASA Astrophysics Data System (ADS)

Holland, S. Keith; Dutter, Melissa R.; Lawrence, David J.; Reisner, Barbara A.; DeVore, Thomas C.

2014-01-01

The effects of tungsten doping and hydrogen annealing on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting were studied. Thin films of BiVO were deposited on indium tin oxide-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) to the precursor. The 1.7- to 2.2-μm-thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375°C in 3% H exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination, where photocurrent densities of up to 1.3 mA cm-2 at 0.5 V with respect to Ag/AgCl were achieved. Films doped with 1% or 5% (atomic percent) tungsten from either STA or AMT exhibited reduced PEC performance and greater sample-to-sample performance variations. Powder x-ray diffraction data indicated that the films continue to crystallize in the monoclinic polymorph at low doping levels but crystallize in the tetragonal scheelite structure at higher doping. It is surmised that the phase and morphology differences promoted by the addition of W during the deposition process reduced the PEC performance as measured by photovoltammetry.

Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

NASA Astrophysics Data System (ADS)

Zhang, Huafu; Wu, Zhiming; Niu, Ruihua; Wu, Xuefei; he, Qiong; Jiang, Yadong

2015-03-01

Silicon-doped and un-doped vanadium dioxide (VO2) films were synthesized on high-purity single-crystal silicon substrates by means of reactive direct current magnetron sputtering followed by thermal annealing. The structure, morphology and metal-insulator transition properties of silicon-doped VO2 films at terahertz range were measured and compared to those of un-doped VO2 films. X-ray diffraction and scanning electron microscopy indicated that doping the films with silicon significantly affects the preferred crystallographic orientation and surface morphologies (grain size, pores and characteristics of grain boundaries). The temperature dependence of terahertz transmission shows that the transition temperature, hysteresis width and transition sharpness greatly depend on the silicon contents while the transition amplitude was relatively insensitive to the silicon contents. Interestingly, the VO2 film doped with a silicon content of 4.6 at.% shows excellent terahertz switching characteristics, namely a small hysteresis width of 4.5 °C, a giant transmission modulation ratio of about 82% and a relatively low transition temperature of 56.1 °C upon heating. This work experimentally indicates that silicon doping can effectively control not only the surface morphology but also the metal-insulator transition characteristics of VO2 films at terahertz range.

Enhancement of electrical transport modulation in epitaxial VO2 nanowire field-effect transistor

NASA Astrophysics Data System (ADS)

Tanaka, Hidekazu; Chikanari, Masashi; Kanki, Teruo

Strongly correlated system vanadium dioxide VO2 has attracted widespread concerns from researchers as an exciting electronic material, due to the many intriguing features, especially metal-insulator transition (MIT) in vicinity of room temperature. In this work, we report a diverse geometry for high sensitivity in the transport modulation. By taking advantage of nanometer scale channel, instead of thin film channels, we demonstrated the enhancement of resistance modulation by applying gate voltage. Also we designed the insulating gate, consisting of high-k material Ta2O5/organic polymer parylene-C hybrid insulator. Such as this hybrid gate dielectric would effectively reduce interface deterioration of active channel oxide and provide sufficient carrier density. Moreover, benefited from the nanometer scale channel, the VO2 nanowire-based transistor could deliver a resistance modulation ratio over 8.5%, which are about 10 folds higher than that of the film case. Furthermore, this result is explained that in spite of the stronger field distribution in the edge parts of VO2 nanowire channel yielded little carrier density, the generated mobility modulation would biquadratic increase according to Brinkman-Rice picture as new finding.

Two-step electrodeposition to fabricate the p-n heterojunction of a Cu2O/BiVO4 photoanode for the enhancement of photoelectrochemical water splitting.

PubMed

Bai, Shouli; Liu, Jingchao; Cui, Meng; Luo, Ruixian; He, Jing; Chen, Aifan

2018-05-15

A Cu2O/BiVO4 p-n heterojunction based photoanode in photoelectrochemical (PEC) water splitting is fabricated by a two-step electrodeposition method on an FTO substrate followed by annealing treatment. The structures and properties of the samples are characterized by XRD, FESEM, HRTEM, XPS and UV-visible spectra. The photoelectrochemical activity of the photoanode in water oxidation has been investigated and measured in a three electrode quartz cell system; the obtained maximum photocurrent density of 1.72 mA cm-2 at 1.23 V vs. RHE is 4.5 times higher than that of pristine BiVO4 thin films (∼0.38 mA cm-2). The heterojunction based photoanode also exhibits a tremendous cathodic shift of the onset potential (∼420 mV) and enhancement in the IPCE value by more than 4-fold. The enhanced photoelectrochemical properties of the Cu2O/BiVO4 photoelectrode are attributed to the efficient separation of the photoexcited electron-hole pairs caused by the inner electronic field (IEF) of the p-n heterojunction.

Growth control of the oxidation state in vanadium oxide thin films

NASA Astrophysics Data System (ADS)

Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Egami, Takeshi; Lee, Ho Nyung

2014-12-01

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V2 + 3 O 3 , V + 4 O 2 , and V2 + 5 O 5 . A well pronounced MIT was only observed in VO2 films grown in a very narrow range of oxygen partial pressure P(O2). The films grown either in lower (<10 mTorr) or higher P(O2) (>25 mTorr) result in V2O3 and V2O5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

Growth control of the oxidation state in vanadium oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Shinbuhm; Meyer, Tricia L.; Lee, Ho Nyung, E-mail: hnlee@ornl.gov

2014-12-01

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase puremore » epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V{sub 2}{sup +3}O{sub 3}, V{sup +4}O{sub 2}, and V{sub 2}{sup +5}O{sub 5}. A well pronounced MIT was only observed in VO{sub 2} films grown in a very narrow range of oxygen partial pressure P(O{sub 2}). The films grown either in lower (<10 mTorr) or higher P(O{sub 2}) (>25 mTorr) result in V{sub 2}O{sub 3} and V{sub 2}O{sub 5} phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO{sub 2} thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.« less

Ultrathin Lutetium Oxide Film as an Epitaxial Hole-Blocking Layer for Crystalline Bismuth Vanadate Water Splitting Photoanodes

DOE PAGES

Zhang, Wenrui; Yan, Danhua; Tong, Xiao; ...

2018-01-08

Here a novel ultrathin lutetium oxide (Lu 2O 3) interlayer is integrated with crystalline bismuth vanadate (BiVO4) thin film photoanodes to facilitate carrier transport through atomic-scale interface control. The epitaxial Lu 2O 32O 3

Atomic Layer Deposition of Bismuth Vanadates for Solar Energy Materials.

PubMed

Stefik, Morgan

2016-07-07

The fabrication of porous nanocomposites is key to the advancement of energy conversion and storage devices that interface with electrolytes. Bismuth vanadate, BiVO4 , is a promising oxide for solar water splitting where the controlled fabrication of BiVO4 layers within porous, conducting scaffolds has remained a challenge. Here, the atomic layer deposition of bismuth vanadates is reported from BiPh3 , vanadium(V) oxytriisopropoxide, and water. The resulting films have tunable stoichiometry and may be crystallized to form the photoactive scheelite structure of BiVO4 . A selective etching process was used with vanadium-rich depositions to enable the synthesis of phase-pure BiVO4 after spinodal decomposition. BiVO4 thin films were measured for photoelectrochemical performance under AM 1.5 illumination. The average photocurrents were 1.17 mA cm(-2) at 1.23 V versus the reversible hydrogen electrode using a hole-scavenging sulfite electrolyte. The capability to deposit conformal bismuth vanadates will enable a new generation of nanocomposite architectures for solar water splitting. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Carbon quantum dots coated BiVO{sub 4} inverse opals for enhanced photoelectrochemical hydrogen generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nan, Feng; Shen, Mingrong; Fang, Liang, E-mail: zhkang@suda.edu.cn, E-mail: lfang@suda.edu.cn

Carbon quantum dots (CQDs) coated BiVO{sub 4} inverse opal (io-BiVO{sub 4}) structure that shows dramatic improvement of photoelectrochemical hydrogen generation has been fabricated using electrodeposition with a template. The io-BiVO{sub 4} maximizes photon trapping through slow light effect, while maintaining adequate surface area for effective redox reactions. CQDs are then incorporated to the io-BiVO{sub 4} to further improve the photoconversion efficiency. Due to the strong visible light absorption property of CQDs and enhanced separation of the photoexcited electrons, the CQDs coated io-BiVO{sub 4} exhibit a maximum photo-to-hydrogen conversion efficiency of 0.35%, which is 6 times higher than that of themore » pure BiVO{sub 4} thin films. This work is a good example of designing composite photoelectrode by combining quantum dots and photonic crystal.« less

SUPERFUND TREATABILITY CLEARINGHOUSE: INPUT/OUTPUT DATA FOR SEVERAL TREATMENT TECHNOLOGIES

EPA Science Inventory

This treatability study is a pilot-scale evaluation of a thin-film evaporator (TFE) for volatile organics (VO) removal from oily sludges such as refinery sludges. TFEs were studied to evaluate their use to remove and recover VO from these sludges prior to land treatment. This w...

Simultaneous sampling of tissue oxygenation and oxygen consumption in skeletal muscle.

PubMed

Nugent, William H; Song, Bjorn K; Pittman, Roland N; Golub, Aleksander S

2016-05-01

Under physiologic conditions, microvascular oxygen delivery appears to be well matched to oxygen consumption in respiring tissues. We present a technique to measure interstitial oxygen tension (PISFO2) and oxygen consumption (VO2) under steady-state conditions, as well as during the transitions from rest to activity and back. Phosphorescence Quenching Microscopy (PQM) was employed with pneumatic compression cycling to achieve 1 to 10 Hz sampling rates of interstitial PO2 and simultaneous recurrent sampling of VO2 (3/min) in the exteriorized rat spinotrapezius muscle. The compression pressure was optimized to 120-130 mmHg without adverse effect on the tissue preparation. A cycle of 5s compression followed by 15s recovery yielded a resting VO2 of 0.98 ± 0.03 ml O2/100 cm(3)min while preserving microvascular oxygen delivery. The measurement system was then used to assess VO2 dependence on PISFO2 at rest and further tested under conditions of isometric muscle contraction to demonstrate a robust ability to monitor the on-kinetics of tissue respiration and the compensatory changes in PISFO2 during contraction and recovery. The temporal and spatial resolution of this approach is well suited to studies seeking to characterize microvascular oxygen supply and demand in thin tissues. Copyright © 2015 Elsevier Inc. All rights reserved.

Electrical and structural properties of TiO2-δ thin film with oxygen vacancies prepared by RF magnetron sputtering using oxygen radical

NASA Astrophysics Data System (ADS)

Kawamura, Kinya; Suzuki, Naoya; Tsuchiya, Takashi; Shimazu, Yuichi; Minohara, Makoto; Kobayashi, Masaki; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

2016-06-01

Anatase TiO2-δ thin film was prepared by RF magnetron sputtering using oxygen radical and Ti-metal target. Degrees of the TiO2-δ crystal orientation in the thin film depends of the oxygen gas pressure (P\\text{O2}) in the radical gun. The (004)- and (112)-oriented TiO2-δ thin films crystallized without postannealing have the mixed valence Ti4+/Ti3+ state. The electrical conductivities, which corresponds to n-type oxide semiconductor, is higher in the case of (004)-oriented TiO2-δ thin film containing with high concentration of oxygen vacancy. The donor band of TiO2-δ thin film is observed at ˜1.0 eV from the Fermi level (E F). The density-of-state at E F is higher in (004)-oriented TiO2-δ thin film. The above results indicate that the oxygen vacancies can control by changing the P\\text{O2} of the oxygen radical.

Laser-processing of VO2 thin films synthesized by polymer-assisted-deposition

NASA Astrophysics Data System (ADS)

Breckenfeld, Eric; Kim, Heungsoo; Gorzkowski, Edward P.; Sutto, Thomas E.; Piqué, Alberto

2017-03-01

We investigate a novel route for synthesis and laser-sintering of VO2 thin films via solution-based polymer-assisted-deposition (PAD). By replacing the traditional solvent for PAD (water) with propylene glycol, we are able to control the viscosity and improve the environmental stability of the precursor. The solution stability and ability to control the viscosity makes for an ideal solution to pattern simple or complex shapes via direct-write methods. We demonstrate the potential of our precursor for printing applications by combining PAD with laser induced forward transfer (LIFT). We also demonstrate large-area film synthesis on 4 in. diameter glass wafers. By varying the annealing temperature, we identify the optimal synthesis conditions, obtaining optical transmittance changes of 60% at a 2500 nm wavelength and a two-order-of-magnitude semiconductor-to-metal transition. We go on to demonstrate two routes for improved semiconductor-to-metal characteristics. The first method uses a multi-coating process to produce denser films with large particles. The second method uses a pulsed-UV-laser sintering step in films annealed at low temperatures (<450° C) to promote particle growth and improve the semiconductor-to-metal transition. By comparing the hysteresis width and semiconductor-to-metal transition magnitude in these samples, we demonstrate that both methods yield high quality VO2 with a three-order-of-magnitude transition.

Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

NASA Astrophysics Data System (ADS)

Cho, Yong-Jung; Kim, Woo-Sic; Lee, Yeol-Hyeong; Park, Jeong Ki; Kim, Geon Tae; Kim, Ohyun

2018-06-01

We investigated the mechanism of formation of the hump that occurs in the current-voltage I-V characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) that are exposed to long-term drain bias stress under illumination. Transfer characteristics showed two-stage degradation under the stress. At the beginning of the stress, the I-V characteristics shifted in the negative direction with a degradation of subthreshold slope, but the hump phenomenon developed over time in the I-V characteristics. The development of the hump was related to creation of defects, especially ionized oxygen vacancies which act as shallow donor-like states near the conduction-band minimum in a-IGZO. To further investigate the hump phenomenon we measured a capacitance-voltage C-V curve and performed two-dimensional device simulation. Stretched-out C-V for the gate-to-drain capacitance and simulated electric field distribution which exhibited large electric field near the drain side of TFT indicated that VO2+ were generated near the drain side of TFT, but the hump was not induced when VO2+ only existed near the drain side. Therefore, the degradation behavior under DBITS occurred because VO2+ were created near the drain side, then were migrated to the source side of the TFT.

Low temperature fabrication of VO x thin films for uncooled IR detectors by direct current reactive magnetron sputtering method

NASA Astrophysics Data System (ADS)

Dai, Jun; Wang, Xingzhi; He, Shaowei; Huang, Ying; Yi, Xinjian

2008-03-01

Vanadium oxide films have been fabricated on Si3N4-film-coated silicon substrates by direct current reactive magnetron sputtering method. Conditions of deposition are optimized making use of parameters such as sputtering time, dc power, oxygen partial pressure and substrate temperature. X-ray diffraction indicates that the film is a mixture of VO2, V2O3, and V3O5. Four-probe measurement shows that the VOx thin film owns high temperature coefficient of resistance (TCR ∼-2.05%/°C) and suitable square resistance 18.40 kΩ/□ (measured at 25 °C), indicating it is a well candidate material for uncooled IR detectors. In addition, IR absorption in the wavelength of 2-16 μm has been characterized. It is worth noting that the films are sputtered at a relatively low temperature of 210 °C in a controlled Ar/O2 atmosphere. Compared to traditional craft, this method needs no post-anneal at high temperature (400-500 °C).

Suspended sub-50 nm vanadium dioxide membrane transistors: fabrication and ionic liquid gating studies

NASA Astrophysics Data System (ADS)

Sim, Jai S.; Zhou, You; Ramanathan, Shriram

2012-10-01

We demonstrate a robust lithographic patterning method to fabricate self-supported sub-50 nm VO2 membranes that undergo a phase transition. Utilizing such self-supported membranes, we directly observed a shift in the metal-insulator transition temperature arising from stress relaxation and consistent opening of the hysteresis. Electric double layer transistors were then fabricated with the membranes and compared to thin film devices. The ionic liquid allowed reversible modulation of channel resistance and distinguishing bulk processes from the surface effects. From the shift in the metal-insulator transition temperature, the carrier density doped through electrolyte gating is estimated to be 1 × 1020 cm-3. Hydrogen annealing studies showed little difference in resistivity between the film and the membrane indicating rapid diffusion of hydrogen in the vanadium oxide rutile lattice consistent with previous observations. The ability to fabricate electrically-wired, suspended VO2 ultra-thin membranes creates new opportunities to study mesoscopic size effects on phase transitions and may also be of interest in sensor devices.

Microstructure et proprietes electriques de l'oxyde de vanadium pour les microbolometres

NASA Astrophysics Data System (ADS)

Cadieux, Catherine

Recent technological breakthroughs in the fabrication of microsystems will soon allow the mass production of infrared cameras. Subsequent price cut will open many new sectors of application. Because of its electrical properties, sputtered vanadium oxide has already been identified as the leading candidate for the active material of microbolometers. However, the large number of different crystallographic phases, as well as the instable nature of reactive sputtering, haveled to numerous contradictions in the existing literature. With the objective of understanding the impact of the deposition parameters on the microstructure, and of the microstructure on the electrical properties, vanadium oxide thin films have been deposited and characterised. In order to study their impact on the microstructure, oxidation state and pulse at the target, substrate bias and temperature, power, and film thickness were varied independently. The resulting thin films have been characterised by X-ray diffraction, Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, spectral reflectometry, optical interferometry as well as four-point probe and Van Der Pauw electrical measurements. Because of the instability of the poisoning regime, the actual system configuration forbids the deposition of phases with composition between V 3O7 and V7O3. Films deposited under a strong bias in the poisoned regime having the best properties, their growth mechanism has been thoroughly investigated. Under those conditions, the bombarding ions are energetic enough to modify the structure of the underlying thin film without resputtering it. A complex relation linking temperature, thickness and microstructure is observed. As the thickness is increased, the structure changes from amorphous, to almost monocristalline V2O5 (001) oriented, to polycristalline. For higher deposition power, the polycristalline section contains V3O7 in addition to the multiple orientations of V2O5. Those germinations which have already been observed but not explained in literature can be attributed to the accumulation of germination centers, a stress buildup for the crystalline sections, and a substrate heating caused by the ions bombardment. This last effect is also suggested to be the cause of the amorphous phase crystallisation for the films with longer deposition times. Films deposited at different temperatures show the same microstructure transitions. Two different behavior regimes can be proposed as function of the adatoms' energy. For low temperature, increasing the adatom energy increases the diffusion which promotes the formation of the lowest surface energy stoichiometry and orientation, V2O 5(001). At higher temperature, energy is sufficient to form more energetically expensive orientation and phases. Resistivity is strongly dependant on grain boundaries density as seen by its relationship with lateral grain size. The thin film resistivity is also increased with the number of different crystallographic orientation present in it. To circumvent the high sheet resistance of the deposited single layer films, a multilayer stacking of alternating oxides and metal layers has been deposited. This approach has permitted this project's industrial collaborator to obtain a sheet resistance of 250 kO/□and a TCR of -1.59 %/K. The microstructure of the multilayer is however very heterogeneous. Not only can the metal layers be identified, it is also possible to observe the amorphous to polycrystalline transition described higher for every oxide layer. This multilayer, as well as the best single layer film produced have been annealed for 2 hours at 400°C in high vacuum. The annealed multilayer doesn't show any diffraction peaks, has very low resistance, and an almost null TCR generally attributed to metallic compounds We suggest that the diffusion of the vanadium layers into the stack created a polycrystalline structure with grains that are too small to be seen by XRD. The single layer underwent thermal reduction to form the VO2(B)phase and also became very conductive. Its TCR was afterward measured at the interesting value of -1.74 %/K. Is it suggested that the low resistivity is caused by the presence of small grains of the metallic phase of VO2, which happens to be the next step in the reduction process. Single layer annealing seems to be a promising avenue for the development of films adequate for microbolometer integration with the present deposition system. It is nonetheless recommended to pursue this avenue using films that are homogenous on their thickness in order to decouple the thickness dependence of deposition and thermal reduction. Multilayers using already homogenous amorphous oxides can also be a solution. Finally, non-reactive deposition of tungsten doped thin films followed by an oxidizing anneal may be an option that would bypass the uniformity and stability problems of the present project.

DFT+DMFT study of strain and interface effects in d1 and d2 t2 g-perovskites

NASA Astrophysics Data System (ADS)

Sclauzero, Gabriele; Dymkowski, Krzysztof; Ederer, Claude

2015-03-01

Metal-insulator transitions in thin films of early-transition metal correlated oxides are linked to both epitaxial strain and electronic reconstruction at the film/substrate interface. We separately address these two key factors for LaTiO3 and LaVO3 through density functional theory plus dynamical mean-field theory (DFT+DMFT). We find that mere epitaxial strain suffices to induce an insulator-to-metal transition in LaTiO3, but not in LaVO3, in agreement with recent experiments. We show that this difference can be explained by the combined effect of strain-induced changes in the crystal field splitting of t2 g orbitals and different orbital filling in these two materials. The role of the interface is investigated through DFT+DMFT simulations of LaVO3/SrTiO3 heterostructures with varying superlattice periodicities and substrate terminations. Our aim is to assess whether the metallicity observed at the LaVO3/SrTiO3 interface could be driven by pure electronic reconstruction effects, rather than structural or stoichiometric reasons (such as, e.g., O-related defects).

Studies on annealed ZnO:V thin films deposited by nebulised spray pyrolysis method

NASA Astrophysics Data System (ADS)

Malini, D. Rachel

2018-04-01

Structural, optical and photoluminescence properties of annealed ZnO:V thin films deposited by nebulized spray pyrolysis technique by varying vanadium concentration are studied. Thickness of thin films varies from 1.52µm to 7.78µm. V2O5, VO2 and ZnO peaks are observed in XRD patterns deposited with high vanadium concentration and the intensity of peaks corresponding to ZnO decreases in those samples. Morphological properties were studied by analysing SEM images and annealed thin films deposited at ZnO:V = 50:50 possess dumb bell shape grains. Emission peaks corresponding to both Augur transition and deep level transition are observed in the PL spectra of the samples.

Integrating a Semitransparent, Fullerene-Free Organic Solar Cell in Tandem with a BiVO4 Photoanode for Unassisted Solar Water Splitting.

PubMed

Peng, Yuelin; Govindaraju, Gokul V; Lee, Dong Ki; Choi, Kyoung-Shin; Andrew, Trisha L

2017-07-12

We report an unassisted solar water splitting system powered by a diketopyrrolopyrrole (DPP)-containing semitransparent organic solar cell. Two major merits of this fullerene-free solar cell enable its integration with a BiVO 4 photoanode. First is the high open circuit voltage and high fill factor displayed by this single junction solar cell, which yields sufficient power to effect water splitting when serially connected to an appropriate electrode/catalyst. Second, the wavelength-resolved photoaction spectrum of the DPP-based solar cell has minimal overlap with that of the BiVO 4 photoanode, thus ensuring that light collection across these two components can be optimized. The latter feature enables a new water splitting device configuration wherein the solar cell is placed first in the path of incident light, before the BiVO 4 photoanode, although BiVO 4 has a wider bandgap. This configuration is accessed by replacing the reflective top electrode of the standard DPP-based solar cell with a thin metal film and an antireflection layer, thus rendering the solar cell semitransparent. In this configuration, incident light does not travel through the aqueous electrolyte to reach the solar cell or photoanode, and therefore, photon losses due to the scattering of water are reduced. Moreover, this new configuration allows the BiVO 4 photoanode to be back-illuminated, i.e., through the BiVO 4 /back contact interface, which leads to higher photocurrents compared to front illumination. The combination of a semitransparent single-junction solar cell and a BiVO 4 photoanode coated with oxygen evolution catalysts in a new device configuration yielded an unassisted solar water splitting system with a solar-to-hydrogen conversion efficiency of 2.2% in water.

Photoelectrochemical performance of W-doped BiVO4 thin-films deposited by spray pyrolysis

NASA Astrophysics Data System (ADS)

Holland, Stephen K.; Dutter, Melissa R.; Lawrence, David J.; Reisner, Barbara A.; DeVore, Thomas C.

2013-09-01

The effect of tungsten doping and hydrogen annealing treatments on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting was studied. Thin films of BiVO4 were deposited on ITO-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) in the aqueous precursor. The 1.7 μm - 2.2 μm thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375 ºC in 3% H2 exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination. This performance enhancement was believed to be due to the formation of oxygen vacancies, which are shallow electron donors, in the films. Films doped with 1% or 5% tungsten from either STA or AMT exhibited reduced photoelectrochemical performance and greater sample-to-sample performance variations. Powder X-ray diffraction data of the undoped films indicated that they were comprised primarily of the monoclinic scheelite phase while unidentified phases were also present. Scanning electron microscopy showed slightly different morphology characteristics for the Wdoped films. It is surmised that the addition of W in the deposition process promoted the morphology differences and the formation of different phases, thus reducing the PEC performance of the photoanode samples. Significant PEC performance variability was also observed among films deposited using the described process.

Changes in blood lactate and respiratory gas exchange measures in sports with discontinuous load profiles.

PubMed

Smekal, Gerhard; von Duvillard, Serge P; Pokan, Rochus; Tschan, Harald; Baron, Ramon; Hofmann, Peter; Wonisch, Manfred; Bachl, Norbert

2003-06-01

This study compares two different sport events (orienteering = OTC; tennis = TEC) with discontinuous load profiles and different activity/recovery patterns by means of blood lactate (LA), heart rate (HR), and respiratory gas exchange measures (RGME) determined via a portable respiratory system. During the TEC, 20 tennis-ranked male subjects [age: 26.0 (3.7) years; height: 181.0 (5.7) cm; weight: 73.2 (6.8) kg; maximal oxygen consumption (VO(2)max): 57.3 (5.1) ml.kg(-1).min(-1)] played ten matches of 50 min. During the OTC, 11 male members of the Austrian National Team [age: 23.5 (3.9) years; height: 183.6 (6.8) cm; weight: 72.4 (3.9) kg; VO(2)max: 67.9 (3.8) ml.kg(-1).min(-1)] performed a simulated OTC (six sections; average length: 10.090 m). In both studies data from the maximal treadmill tests (TT) were used as reference values for the comparison of energy expenditure of OTC and TEC. During TEC, the average VO(2) was considerably lower [29.1 (5.6) ml(.)kg(-1.)min(-1)] or 51.1 (10.9)% of VO(2)max and 64.8.0 (13.3)% of VO(2) determined at the individual anaerobic threshold (IAT) on the TT. The short high-intensity periods (activity/recovery = 1/6) did not result in higher LA levels [average LA of games: 2.07 (0.9) mmol.l(-1)]. The highest average VO(2 )value for a whole game was 47.8 ml.kg(-1.)min(-1) and may provide a reference for energy demands required to sustain high-intensity periods of tennis predominantly via aerobic mechanism of energy delivery. During OTC, we found an average VO(2) of 56.4 (4.5) ml.kg(-1).min(-1) or 83.0 (3.8)% of VO(2)max and 94.6 (5.2)% of VO(2) at IAT. In contrast to TEC, LA were relatively high [5.16 (1.5) mmol.l(-1)) although the average VO(2) was significantly lower than VO(2) at IAT. Our data suggest that portable RGEM provides valuable information concerning the energy expenditure in sports that cannot be interpreted from LA or HR measures alone. Portable RGEM systems provide valuable assessment of under- or over-estimation of requirements of sports and assist in the optimization and interpretation of training in athletes.

Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

NASA Astrophysics Data System (ADS)

Kusano, E.; Theil, J. A.; Thornton, John A.

1988-06-01

It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

NASA Technical Reports Server (NTRS)

Kusano, E.; Theil, J. A.; Thornton, John A.

1988-01-01

It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

Fabrication and characterization of {110}-oriented Pb(Zr,Ti)O3 thin films on Pt/SiO2/Si substrates using PdO//Pd buffer layer

NASA Astrophysics Data System (ADS)

Oshima, Naoya; Uchiyama, Kiyoshi; Ehara, Yoshitaka; Oikawa, Takahiro; Ichinose, Daichi; Tanaka, Hiroki; Sato, Tomoya; Uchida, Hiroshi; Funakubo, Hiroshi

2017-10-01

A strongly {110}-oriented perovskite-type thin film of tetragonal Pb(Zr0.4Ti0.6)O3 (PZT) was successfully obtained on a (100)Si substrate using a {101}PdO//{111}Pd thin film as a buffer layer. The {101}PdO//{111}Pd thin film buffer layer was obtained by oxidizing {111}Pd after depositing {111}Pd on a {111}Pt/TiO x /SiO2/{100}Si substrate. Using this buffer layer, a {110} c -oriented SrRuO3 (SRO) thin film was deposited by sputtering as a bottom electrode of PZT thin films. Subsequently, the {110}-oriented PZT thin film can be deposited on a (110) c SRO thin film by metal-organic chemical deposition (MOCVD) and its properties can be compared with those of PZT thin films with other orientations of {100} and {111}. Among the {100}, {110}, {111}-oriented PZT films, the {100}-oriented one showed the largest remnant polarization, which is in good agreement with those of the PZTs epitaxially grown in the 〈100〉, 〈110〉, and 〈111〉 directions. The other properties, i.e., piezoelectricity and dielectric constants, also showed similar anisotropic tendencies, which is in good agreement with the data reported in the epitaxially grown PZTs.

Inhomogeneity of the ultrafast insulator-to-metal transition dynamics of VO2.

PubMed

O'Callahan, Brian T; Jones, Andrew C; Hyung Park, Jae; Cobden, David H; Atkin, Joanna M; Raschke, Markus B

2015-04-21

The insulator-metal transition (IMT) of vanadium dioxide (VO2) has remained a long-standing challenge in correlated electron physics since its discovery five decades ago. Most interpretations of experimental observations have implicitly assumed a homogeneous material response. Here we reveal inhomogeneous behaviour of even individual VO2 microcrystals using pump-probe microscopy and nanoimaging. The timescales of the ultrafast IMT vary from 40±8 fs, that is, shorter than a suggested phonon bottleneck, to 200±20 fs, uncorrelated with crystal size, transition temperature and initial insulating structural phase, with average value similar to results from polycrystalline thin-film studies. In combination with the observed sensitive variations in the thermal nanodomain IMT behaviour, this suggests that the IMT is highly susceptible to local changes in, for example, doping, defects and strain. Our results suggest an electronic mechanism dominating the photoinduced IMT, but also highlight the difficulty to deduce microscopic mechanisms when the true intrinsic material response is yet unclear.

Temperature dependence of laser induced insulator-metal transition in VO2

NASA Astrophysics Data System (ADS)

Wang, Siming; Bar-Ad, Shimshon; Ramirez, Juan Gabriel; Huppert, Dan; Schuller, Ivan K.

2013-03-01

We performed optical pump-probe experiments on VO2 thin films with low laser fluence at temperatures ranging across the insulator-metal transition (IMT). At room temperature, the reflectivity of VO2 increases in the first 400-500 fs when pumped by 150 fs laser pulses. An exponential decay of the reflectivity is observed in the following 1 ps. Interestingly, as the temperature approaches the transition temperature (340 K), the reflectivity shows a second increase on an 80 ps time scale following the exponential decay, indicating an IMT. We propose that the decay of the reflectivity is due to electron-phonon thermalization, which raises the phonon temperature and causes a superheating of the lattice. This process provides the latent heat and induces the IMT on the 80 ps time scale. The coexistence of the insulating and metallic phases is observed in the reflectivity measurements for temperatures above 340 K. This work is supported by the Air Force Office of Scientific Research No. FA9550-12-1-0381.

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

NASA Astrophysics Data System (ADS)

Noh, Hyeon-Kyun; Chang, K. J.; Ryu, Byungki; Lee, Woo-Jin

2011-09-01

We perform first-principles density functional calculations to investigate the atomic and electronic properties of various O-vacancy (VO) defects in amorphous indium gallium zinc oxides (a-IGZO). The formation energies of VO have a tendency to increase with increasing number of neighboring Ga atoms, whereas they are generally low in the environment surrounded with In atoms. Thus, adding Ga atoms suppresses the formation of O-deficiency defects, which are considered as the origin of device instability in a-IGZO-based thin film transistors. The conduction band edge state is characterized by the In s orbital and insensitive to disorder, in good agreement with the experimental finding that increasing the In content enhances the carrier density and mobility. In a-IGZO, while most VO defects are deep donors, some of the defects act as shallow donors due to local environments different from those in crystalline oxides. As ionized O vacancies can capture electrons, it is suggested that these defects are responsible for positive shifts of the threshold voltage observed under positive gate bias stress. Under light illumination stress, VO defects can be ionized, becoming VO2+ defects due to the negative-U behavior. When electrons are captured by applying a negative bias voltage, ionized VO2+ defects return to the original neutral charge state. Through molecular dynamics simulations, we find that the initial neutral state is restored by annealing, in good agreement with experiments, although the annealing temperature depends on the local environment. Our calculations show that VO defects play an important role in the instability of a-IGZO-based devices.

Magnetic and Ferroelectric Anisotropy in Multiferroic FeVO4

NASA Astrophysics Data System (ADS)

Abdelhamid, Ehab; Dixit, Ambesh; Kimura, Kenta; Kimura, Tsuyoshi; Jayakumar, Onattu; Naik, Vaman; Naik, Ratna; Lawes, Gavin; Nadgorny, Boris

FeVO4 has been studied as a model system for understanding the magnetoelectric interaction mechanisms in low symmetry multiferroics. Triclinic FeVO4 is characterized by two antiferromagnetic phase transitions, occurring at TN 1 = 22 K and TN 2 = 15 K, with the latter transition signaling a break in the space inversion symmetry, accompanied by the development of a non-collinear magnetic order which induces ferroelectricity. Earlier measurements on polycrystalline FeVO4 doped with magnetic (Cr and Mn) as well as non magnetic (Zn) dopants indicate the stability of the two antiferromagnetic transition temperatures. In this work, single crystals of both undoped and doped FeVO4 were grown from flux. To track the changes in lattice parameters induced by changing the doping concentration (measured by EDAX), XRD and Raman spectra were obtained. By recording the magnetization along two different crystal orientations, we were able to confirm the easy magnetic axis in this structure. Finally, we obtain the crystal's ferroelectric polarization along two different directions in an attempt to further understand the mechanism responsible for the ferroelectric transition. This work is supported by the NSF under DMR-1306449.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Hongjiang; Gao, Yanfeng, E-mail: gaosic@gmail.com; School of Materials Science and Engineering, Shanghai University, Shangda Rd. 99, Baoshan, Shanghai 200444

A novel, hydrothermal and hard-template-free method was developed for the first time to grow oriented, single-crystalline monoclinic VO{sub 2} (B) flower-like nanorod films on transparent conductive fluorine-doped tin oxide (FTO) substrates. The length and morphology of the nanorods can be tuned by changing the growth parameters, such as growth time and initial precursor concentration. The flower-like V{sub 2}O{sub 5} films were obtained after post-calcination treatment of VO{sub 2} (B) films. The photocatalytic activity of V{sub 2}O{sub 5} films was investigated by the degradation of methylene blue (MB) under UV and visible light. The prepared V{sub 2}O{sub 5} film exhibited goodmore » photocatalytic performance (74.6% and 63% under UV and visible light for 210 min, respectively) and more practical application in industry. - Graphical abstract: Flower nanostructured vanadium oxide film was prepared by hydrothermal reaction for photocatalysis application. - Highlights: • Monoclinic VO{sub 2} nanorod array and flower-like nanostructure were directly grown on FTO substrate by hydrothermal reaction. • The growth mechanism was analyzed by FESEM at different time. • V{sub 2}O{sub 5} flower-like nanostructure film was obtained after calcining VO{sub 2} film. • V{sub 2}O{sub 5} film exhibited good light activity and potential application in photocatalysis.« less

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

NASA Astrophysics Data System (ADS)

Shen, Huaxiang; Zhu, Guo-Zhen; Botton, Gianluigi A.; Kitai, Adrian

2015-03-01

The growth mechanisms of high quality GaN thin films on 6H-SiC by sputtering were investigated by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The XRD θ-2θ scans show that high quality ( 0002 ) oriented GaN was deposited on 6H-SiC by reactive magnetron sputtering. Pole figures obtained by 2D-XRD clarify that GaN thin films are dominated by ( 0002 ) oriented wurtzite GaN and { 111 } oriented zinc-blende GaN. A thin amorphous silicon oxide layer on SiC surfaces observed by STEM plays a critical role in terms of the orientation information transfer from the substrate to the GaN epilayer. The addition of H2 into Ar and/or N2 during sputtering can reduce the thickness of the amorphous layer. Moreover, adding 5% H2 into Ar can facilitate a phase transformation from amorphous to crystalline in the silicon oxide layer and eliminate the unwanted { 3 3 ¯ 02 } orientation in the GaN thin film. Fiber texture GaN thin films can be grown by adding 10% H2 into N2 due to the complex reaction between H2 and N2.

All-optical short pulse translation through cross-phase modulation in a VO₂ thin film.

PubMed

Fardad, Shima; Das, Susobhan; Salandrino, Alessandro; Breckenfeld, Eric; Kim, Heungsoo; Wu, Judy; Hui, Rongqing

2016-01-15

VO2 is a promising material for reconfigurable photonic devices due to the ultrafast changes in electronic and optical properties associated with its dielectric-to-metal phase transition. Based on a fiber-optic, pump-probe setup at 1550 nm wavelength window, and by varying the pump-pulse duration, we show that the material phase transition is primarily caused by the pump-pulse energy. For the first time, we demonstrate that the instantaneous optical phase modulation of probe during pump leading edge can be utilized to create short optical pulses at probe wavelength, through optical frequency discrimination. This circumvents the impact of long recovery time well known for the phase transition of VO2.

Photocatalytic generation of hydrogen by core-shell WO3/BiVO4 nanorods with ultimate water splitting efficiency

PubMed Central

Pihosh, Yuriy; Turkevych, Ivan; Mawatari, Kazuma; Uemura, Jin; Kazoe, Yutaka; Kosar, Sonya; Makita, Kikuo; Sugaya, Takeyoshi; Matsui, Takuya; Fujita, Daisuke; Tosa, Masahiro; Kondo, Michio; Kitamori, Takehiko

2015-01-01

Efficient photocatalytic water splitting requires effective generation, separation and transfer of photo-induced charge carriers that can hardly be achieved simultaneously in a single material. Here we show that the effectiveness of each process can be separately maximized in a nanostructured heterojunction with extremely thin absorber layer. We demonstrate this concept on WO3/BiVO4+CoPi core-shell nanostructured photoanode that achieves near theoretical water splitting efficiency. BiVO4 is characterized by a high recombination rate of photogenerated carriers that have much shorter diffusion length than the thickness required for sufficient light absorption. This issue can be resolved by the combination of BiVO4 with more conductive WO3 nanorods in a form of core-shell heterojunction, where the BiVO4 absorber layer is thinner than the carrier diffusion length while it’s optical thickness is reestablished by light trapping in high aspect ratio nanostructures. Our photoanode demonstrates ultimate water splitting photocurrent of 6.72 mA cm−2 under 1 sun illumination at 1.23 VRHE that corresponds to ~90% of the theoretically possible value for BiVO4. We also demonstrate a self-biased operation of the photoanode in tandem with a double-junction GaAs/InGaAsP photovoltaic cell with stable water splitting photocurrent of 6.56 mA cm−2 that corresponds to the solar to hydrogen generation efficiency of 8.1%. PMID:26053164

Photocatalytic generation of hydrogen by core-shell WO3/BiVO4 nanorods with ultimate water splitting efficiency

NASA Astrophysics Data System (ADS)

Pihosh, Yuriy; Turkevych, Ivan; Mawatari, Kazuma; Uemura, Jin; Kazoe, Yutaka; Kosar, Sonya; Makita, Kikuo; Sugaya, Takeyoshi; Matsui, Takuya; Fujita, Daisuke; Tosa, Masahiro; Kondo, Michio; Kitamori, Takehiko

2015-06-01

Efficient photocatalytic water splitting requires effective generation, separation and transfer of photo-induced charge carriers that can hardly be achieved simultaneously in a single material. Here we show that the effectiveness of each process can be separately maximized in a nanostructured heterojunction with extremely thin absorber layer. We demonstrate this concept on WO3/BiVO4+CoPi core-shell nanostructured photoanode that achieves near theoretical water splitting efficiency. BiVO4 is characterized by a high recombination rate of photogenerated carriers that have much shorter diffusion length than the thickness required for sufficient light absorption. This issue can be resolved by the combination of BiVO4 with more conductive WO3 nanorods in a form of core-shell heterojunction, where the BiVO4 absorber layer is thinner than the carrier diffusion length while it’s optical thickness is reestablished by light trapping in high aspect ratio nanostructures. Our photoanode demonstrates ultimate water splitting photocurrent of 6.72 mA cm-2 under 1 sun illumination at 1.23 VRHE that corresponds to ~90% of the theoretically possible value for BiVO4. We also demonstrate a self-biased operation of the photoanode in tandem with a double-junction GaAs/InGaAsP photovoltaic cell with stable water splitting photocurrent of 6.56 mA cm-2 that corresponds to the solar to hydrogen generation efficiency of 8.1%.

Effects of quercetin supplementation on endurance performance and maximal oxygen consumption: a meta-analysis.

PubMed

Pelletier, Denis M; Lacerte, Guillaume; Goulet, Eric D B

2013-02-01

Lately, the effect of quercetin supplementation (QS) on endurance performance (EP) and maximal oxygen consumption (VO2max) has been receiving much scientific and media attention. Therefore, a meta-analysis was performed to determine QS's ergogenic value on these variables. Studies were located with database searches (PubMed and SPORTDiscus) and cross-referencing. Outcomes represent mean percentage changes in EP (measured via power output) and VO2max between QS and placebo. Random-effects model meta-regression, mixed-effects model analog to the ANOVA, random-effects weighted mean effect summary, and magnitude-based inferences analyses were used to delineate the effects of QS. Seven research articles (representing 288 subjects) were included, producing 4 VO2max and 10 EP effect estimates. Mean QS daily intake and duration were, respectively, 960 ± 127 mg and 26 ± 24 d for the EP outcome and 1,000 ± 0 mg and 8 ± 23 d for the VO2max outcome. EP was assessed during exercise with a mean duration of 79 ± 82 min. Overall, QS improved EP by 0.74% (95% CI: 0.10-1.39, p = .02) compared with placebo. However, only in untrained individuals (0.83% ± 0.78%, p = .02) did QS significantly improve EP (trained individuals: 0.09% ± 2.15%, p = .92). There was no relationship between QS duration and EP (p = .69). Overall, QS increased VO2max by 1.94% (95% CI: 0.30-3.59, p = .02). Magnitude-based inferences suggest that the effect of QS on EP and VO2max is likely to be trivial for both trained and untrained individuals. In conclusion, this meta-analysis indicates that QS is unlikely to prove ergogenic for aerobic-oriented exercises in trained and untrained individuals.

Fabrication of vanadium dioxide polycrystalline films with higher temperature coefficient of resistance

NASA Astrophysics Data System (ADS)

Li, Jinhua; Yuan, Ningyi; Jiang, Meiping; Kun, Li

2011-08-01

Vanadium Dioxide Polycrystalline Films with High Temperature Coefficient of Resistance(TCR) were fabricated by modified Ion Beam Enhanced Deposition(IBED) method. The TCR of the Un-doping VO2 was about -4%/K at room temperature after appropriate thermal annealing. The XRD results clearly showed that IBED polycrystalline VO2 films had a single [002] orientation of VO2(M). The TCR of 5at.%W and 7at.% Ta doped Vanadium Dioxide Polycrystalline Films were high up to -18%/K and -12%/K at room temperature, respectively. Using 7at.% Ta and 2at.% Ti co-doping, the TCR of the co-doped vanadium oxide film was -7%/K and without hysteresis during temperature increasing and decresing from 0-80°C. It should indicate that the W-doped vanadium dioxide films colud be used for high sensing IR detect and the Ta/Ti co-doped film without hysteresis is suitable for infrarid imaging application.

Preparation and Ferroelectric Property of (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 Thin Film on Pt/Ti/SiO2/Si Substrate

NASA Astrophysics Data System (ADS)

Fan, Suhua; Che, Quande; Zhang, Fengqing

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

Harnessing the metal-insulator transition for tunable metamaterials

NASA Astrophysics Data System (ADS)

Charipar, Nicholas A.; Charipar, Kristin M.; Kim, Heungsoo; Bingham, Nicholas S.; Suess, Ryan J.; Mathews, Scott A.; Auyeung, Raymond C. Y.; Piqué, Alberto

2017-08-01

The control of light-matter interaction through the use of subwavelength structures known as metamaterials has facilitated the ability to control electromagnetic radiation in ways not previously achievable. A plethora of passive metamaterials as well as examples of active or tunable metamaterials have been realized in recent years. However, the development of tunable metamaterials is still met with challenges due to lack of materials choices. To this end, materials that exhibit a metal-insulator transition are being explored as the active element for future metamaterials because of their characteristic abrupt change in electrical conductivity across their phase transition. The fast switching times (▵t < 100 fs) and a change in resistivity of four orders or more make vanadium dioxide (VO2) an ideal candidate for active metamaterials. It is known that the properties associated with thin film metal-insulator transition materials are strongly dependent on the growth conditions. For this work, we have studied how growth conditions (such as gas partial pressure) influence the metalinsulator transition in VO2 thin films made by pulsed laser deposition. In addition, strain engineering during the growth process has been investigated as a method to tune the metal-insulator transition temperature. Examples of both the optical and electrical transient dynamics facilitating the metal-insulator transition will be presented together with specific examples of thin film metamaterial devices.

Ferroelectric behavior and reproducible Bi-stable resistance switching property in K-doped ZnO thin films as candidate for application in non-volatile memories

NASA Astrophysics Data System (ADS)

Lee, J. W.; Subramaniam, N. G.; Kang, T. W.; Shon, Yoon; Kim, E. K.

2015-05-01

Potassium-doped ZnO thin films electrodeposited on indium tin oxide (ITO) coated glass substrates exhibited ferroelectric behavior with a remnant polarization of 0.2 μC/cm2. Especially, wave forms showing the applied input voltage Vi and output voltage Vo were obtained for Al/ZnO:K/ITO structure. It exhibits a superposition of Vi (input) and Vo (output) signal from Al/ZnO:K/ITO structure with a clear phase shift between the two wave forms which again confirms that the observed ferroelectric hysteresis curve is not related to leaky dielectric materials. The current-voltage characteristics of Al/ZnO:K/ITO structures measured for several cycles revealed bi-stable switching characteristics. The reproducible bi-stable switching characteristics for the mentioned structures had good retention in one particular resistance state. Around one order of switching was realized between low and high resistance states. The switching property thought to be polarization induced originating out from the ferroelectric properties of the potassium doped ZnO thin film. The switching between ZnO:K/ITO interface is assumed to be critical for stability in switching for several cycles. Possible application of this structure in non-volatile memories is explored.

Orbital electronic occupation effect on metal-insulator transition in Ti x V1-x O2.

PubMed

Huang, Kang; Meng, Yifan; Xu, XiaoFeng; Chen, Pingping; Lu, Aijiang; Li, Hui; Wu, Binhe; Wang, Chunrui; Chen, Xiaoshuang

2017-09-06

A series of Ti x V 1-x O 2 (0%  ⩽  x  ⩽  4.48%) thin films on c-plane sapphire substrates have been fabricated by co-sputtering oxidation solutions, and the metal-insulator transition temperature (T MIT ) of Ti x V 1-x O 2 films rises monotonically at the rate of 1.64 K/at.% Ti. The x-ray diffraction measurement results show that, after Ti 4+ ion doping, the rutile structure expands along the c r axis while shrinking along the a r and b r axis simultaneously. It makes the V-O bond length shorter, which is believed to upshift the π * orbitals. The rising of π * orbitals in Ti-doped VO 2 has been illustrated by ultraviolet-infrared spectroscopy and first-principles calculation. With the Ti 4+ ion doping concentration increasing, the energy levels of π * orbitals are elevated and the electronic occupation of π * orbitals decreases, which weakens the shielding for the strong electron-electron correlations in the d || orbital and result in the T MIT rising. The research reveals that the T MIT of VO 2 can be effected by the electronic occupancy of π * orbitals in a rutile state, which is helpful for developing VO 2 -based thermal devices.

Effect of vanadium content on remanent polarization in bismuth titanate thin films prepared by liquid source misted chemical deposition

NASA Astrophysics Data System (ADS)

Kim, Tai Suk; Kim, Ki Woong; Jeon, Min Ku; Jung, Chang Hwa; Woo, Seong Ihl

2007-01-01

Bi4-x/3Ti3-xVxO12 (BTV) ferroelectric thin films were fabricated by liquid source misted chemical deposition. The substitution of vanadium for titanium site changed the crystalline orientation and surface morphology of the thin film, which in turn influenced the remanent polarization (Pr). 2Pr of BTV thin film increased with increase of vanadium content and reached a maximum value (21.5μC/cm2) at x =0.03, as this corresponded with the largest degree of a-axis orientation. However, at 0.05⩽x⩽0.09, 2Pr reduced with decrease in the degree of a-axis orientation. These results indicate that the Pr of the films is dependent on the degree of a-axis orientation.

Improved metal-insulator-transition characteristics of ultrathin VO2 epitaxial films by optimized surface preparation of rutile TiO2 substrates

NASA Astrophysics Data System (ADS)

Martens, Koen; Aetukuri, Nagaphani; Jeong, Jaewoo; Samant, Mahesh G.; Parkin, Stuart S. P.

2014-02-01

Key to the growth of epitaxial, atomically thin films is the preparation of the substrates on which they are deposited. Here, we report the growth of atomically smooth, ultrathin films of VO2 (001), only ˜2 nm thick, which exhibit pronounced metal-insulator transitions, with a change in resistivity of ˜500 times, at a temperature that is close to that of films five times thicker. These films were prepared by pulsed laser deposition on single crystalline TiO2(001) substrates that were treated by dipping in acetone, HCl and HF in successive order, followed by an anneal at 700-750 °C in flowing oxygen. This pretreatment removes surface contaminants, TiO2 defects, and provides a terraced, atomically smooth surface.

Enhanced photoelectrochemical performance of inorganic-organic hybrid consisting of BiVO4 and PEDOT:PSS

NASA Astrophysics Data System (ADS)

Trzciński, K.; Szkoda, M.; Siuzdak, K.; Sawczak, M.; Lisowska-Oleksiak, A.

2016-12-01

The PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)) was electrodeposited on a thin layer of bismuth vanadate (BiVO4) prepared using the pulsed laser deposition technique onto FTO. The inorganic-organic junction was characterized by Raman spectroscopy, UV-vis spectroscopy and scanning electron microscopy. Chronoamperometry curves, recorded under simulated solar light illumination, were performed to determine generated photocurrent during water and hydroquinone oxidation at the electrode surface. Experiments were performed for three types of electrode materials: (i) FTO/BiVO4, (ii) FTO/PEDOT:PSS and (iii) FTO/BiVO4/PEDOT:PSS in aqueous electrolyte. Almost 5 times higher photocurrent in electrolyte containing hole scavenger was generated after modification of BiVO4 photoanode with electrodeposited polymer. It is noteworthy that anodic photocurrent was stable even after 4 h of illumination. Cyclic voltammetry curves of FTO/BiVO4/PEDOT:PSS recorded before and after experiments performed under electrode illumination indicated that the organic part in tested junction is photo-corrosion resistant.

(LaTiO3)n/(LaVO3)n as a model system for unconventional charge transfer and polar metallicity

NASA Astrophysics Data System (ADS)

Weng, Yakui; Zhang, Jun-Jie; Gao, Bin; Dong, Shuai

2017-04-01

At interfaces between oxide materials, lattice and electronic reconstructions always play important roles in exotic phenomena. In this study, the density functional theory and maximally localized Wannier functions are employed to investigate the (LaTiO3)n/(LaVO3)n magnetic superlattices. The electron transfer from Ti3 + to V3 + is predicted, which violates the intuitive band alignment based on the electronic structures of LaTiO3 and LaVO3. Such unconventional charge transfer quenches the magnetism of LaTiO3 layer mostly and leads to metal-insulator transition in the n =1 superlattice when the stacking orientation is altered. In addition, the compatibility among the polar structure, ferrimagnetism, and metallicity is predicted in the n =2 superlattice.

Preparation and investigation of sputtered vanadium dioxide films with large phase-transition hysteresis loops

NASA Astrophysics Data System (ADS)

Zhang, Huafu; Wu, Zhiming; He, Qiong; Jiang, Yadong

2013-07-01

Vanadium dioxide (VO2) films with large phase-transition hysteresis loops were fabricated on glass substrates by reactive direct current (DC) magnetron sputtering in Ar/O2 atmosphere and subsequent in situ annealing process in pure oxygen. The crystal structure, chemical composition, morphology and metal-insulator transition (MIT) properties of the deposited films were investigated. The results reveal that the films show a polycrystalline nature with a (0 1 1) preferred orientation and consist of small spheroidal nanoparticles. All the deposited VO2 films show large hysteresis loops due to the small density of nucleating defects and the large interfacial energies, which are determined by the characteristics of the particles in the films, namely the small transversal grain size and the spheroidal shape. The film comprising the smallest spheroidal nanoparticles not only shows a large hysteresis width of 36.3 °C but also shows a low transition temperature of 32.2 °C upon cooling. This experiment facilitates the civilian applications of the VO2 films on glass substrates in optical storage-type devices.

Reference Model for Performance Management in Service-Oriented Virtual Organization Breeding Environments

NASA Astrophysics Data System (ADS)

Paszkiewicz, Zbigniew; Picard, Willy

Performance management (PM) is a key function of virtual organization (VO) management. A large set of PM indicators has been proposed and evaluated within the context of virtual breeding environments (VBEs). However, it is currently difficult to describe and select suitable PM indicators because of the lack of a common vocabulary and taxonomies of PM indicators. Therefore, there is a need for a framework unifying concepts in the domain of VO PM. In this paper, a reference model for VO PM is presented in the context of service-oriented VBEs. In the proposed reference model, both a set of terms that could be used to describe key performance indicators, and a set of taxonomies reflecting various aspects of PM are proposed. The proposed reference model is a first attempt and a work in progress that should not be supposed exhaustive.

VO.sub.2 precipitates for self-protected optical surfaces

DOEpatents

Gea, Laurence A.; Boatner, Lynn A.

1999-01-01

A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al.sub.2 O.sub.3), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO.sub.2 precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al.sub.2 O.sub.3 host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at .about.77.degree. C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally "switchable" surface region on Al.sub.2 O.sub.3.

Engineering Electronic Properties of Strongly Correlated Metal Thin Films

NASA Astrophysics Data System (ADS)

Eaton, Craig

This dissertation reports on advances in synthesis and characterization of high quality perovskite metals with strong electron correlation. These materials have attracted considerable attention for their potential application as an active electronic material in logic applications utilizing the Mott type metal-to-insulator transition. CaVO3 and SrVO3 correlated metal oxide films have been grown by hybrid-molecular beam epitaxy (MBE), where alkaline earth cations are supplied using a conventional effusion cell and the transition metal vanadium is supplied using the metal-organic precursor vanadium (V) oxytriisopropoxide. Oxygen is available in both molecular and remote plasma activated forms. Titanate-based band insulators, namely SrTiO3 and CaTiO3, have also been grown using titanium tetra-isopropoxide as metal-organic precursor. The grown films have been characterized using reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM), transition electron microscopy (TEM), and electrical properties have been determined using temperature dependent resistivity and Hall measurements. Optimized films exhibit high quality Kiessig fringes, with substrate limited rocking curve widths of 8 arc seconds in the case of CaVO3 and 17 arc seconds in the case of SrVO3. Both vanadate films grew in a step-flow mode with atomic steps visible after growth by AFM. In SrVO3, the perovskite phase remained present with a gradual lattice expansion away from the optimal cation flux ratio. For CaVO3, the films remained phase pure and with little change in lattice parameter throughout a growth window that spanned a 30% range in cation flux ratios. While an abrupt increase of lattice parameter was found for CaVO3 films grown under Carich conditions, films grown under V-rich conditions revealed a gradual reduction in lattice parameter, in contrast to SrVO3 where all defects have been shown to increase unit cell volume. Low resistivity and high residual resistivity ration complex vanadate thin films have been demonstrated. Methods for growing minimally strained SrVO3 films on (LaAlO 3)0.3(Sr2AlTaO6)0.7 substrates (0.7% tensile) were expanded to other substrates with different lattice mismatches, namely SrTiO3 (1.8% tensile) and LaAlO3 (1.3% compressive). Varying strain modifies bond angles or overlap, and can give rise to an insulating ground state. Changes in the film surface morphology derived from atomic force microscopy (AFM) was used to discriminate optimal growth conditions on each substrate. Films grown at each strain state remain strongly metallic at 10 nm thickness. Low temperature resistivity measurements, which demonstrates a marked increase in low temperature resistivity with respect to those films grown at optimized growth parameters, were found to be substrate dependent. The thickness of films grown on SrTiO3 are optimized for maximum thickness without cracking. Use of epitaxial strain as a mechanism for enabling a Mott transition was not demonstrated at strains and conditions attempted within this study. The experimental support of this hypothesis could not be experimentally confirmed within the range of strains studied here. Finally, high quality epitaxial SrTiO3-SrVO3-SrTiO 3 heterostructures are grown on (LaAlO3)0.3(Sr 2AlTaO6)0.7 substrates by hybrid MBE. RHEED, XRD, and TEM showed that these structures are of high structural quality, with atomically and chemically abrupt interfaces. By fixing the thickness of the SrTiO3 confinement layers to be 15 nm and decreasing the thickness of the SrVO3 from 50 nm down to 1.2 nm, it has been demonstrated that the system transitions from a strongly-correlated metal to an insulating state, as shown by temperature dependent resistivity and carrier concentration measurements. For films with thickness larger than 1.2 nm, the resistivity versus temperature is described by Fermi liquid behavior. Below this critical thickness the material undergoes an electronic phase transition into a variable-range hopping insulating phase. The results of this dissertation show that high quality vanadate thin films can be grown by hybrid MBE. Their electronic ground state, metallic in the bulk phase, can be effectively changed using geometrical confinement, while epitaxial strain was found to have a negligible effect. The ability to grow CaVO3 in a self-regulated fashion holds promise that the favorable growth kinetics in hybrid MBE might be a general characteristic of the metalorganic precursor employed.

Nanostructured vanadium oxide thin film with high TCR at room temperature for microbolometer

NASA Astrophysics Data System (ADS)

Wang, Bin; Lai, Jianjun; Li, Hui; Hu, Haoming; Chen, Sihai

2013-03-01

In order to obtain high quality of thermal sensitive material, VOx thin film of high temperature coefficient of resistance (TCR) of 6.5%/K at room temperature has been deposited by reactive ion beam sputtering and post annealing method. AFM and XRD measurements indicate that the VOx thin film with nanostructured crystalline is composed of VO2 and V2O3. The nanostructured VOx microbolometer has been designed and fabricated. The measurement of the film system with TiN absorbing layer indicates that it has about 92% infrared absorption in the range of 8-14 μm. The performance of this bolometer, comparing with that of bolometer with common VOx, has a better result. At 20 Hz frequency and 10 μA bias current, the bolometer with high TCR has reached detectivity of 1.0 × 109 cm Hz1/2/W. It also indicates that this nanostructured VOx thin film has not only a higher TCR but also a lower noise than common VOx thin film without annealing.

Metal-insulator transition in CaVO3 thin films: Interplay between epitaxial strain, dimensional confinement, and surface effects

NASA Astrophysics Data System (ADS)

Beck, Sophie; Sclauzero, Gabriele; Chopra, Uday; Ederer, Claude

2018-02-01

We use density functional theory plus dynamical mean-field theory (DFT+DMFT) to study multiple control parameters for tuning the metal-insulator transition (MIT) in CaVO3 thin films. We focus on separating the effects resulting from substrate-induced epitaxial strain from those related to the reduced thickness of the film. We show that tensile epitaxial strain of around 3%-4% is sufficient to induce a transition to a paramagnetic Mott-insulating phase. This corresponds to the level of strain that could be achieved on a SrTiO3 substrate. Using free-standing slab models, we then demonstrate that reduced film thickness can also cause a MIT in CaVO3, however, only for thicknesses of less than 4 perovskite units. Our calculations indicate that the MIT in such ultrathin films results mainly from a surface-induced crystal-field splitting between the t2 g orbitals, favoring the formation of an orbitally polarized Mott insulator. This surface-induced crystal-field splitting is of the same type as the one resulting from tensile epitaxial strain, and thus the two effects can also cooperate. Furthermore, our calculations confirm an enhancement of correlation effects at the film surface, resulting in a reduced quasiparticle spectral weight in the outermost layer, whereas bulklike properties are recovered within only a few layers away from the surface.

The relation between knee muscle strength and performance tests in orienteering athletes.

PubMed

Çinar-Medeni, Özge; Colakoglu, Fatma F; Yüce, Koray; Ipekoğlu, Gökhan; Baltaci, Gul

2016-11-01

The aim of this study was to analyze the effect of knee muscle strength on performance tests in orienteers. Thirty-seven orienteers were voluntarily included in this study. Isokinetic knee flexor and extensor muscles' strength was assessed at 120°/s velocity for both "dominant leg" (DL) and "non-dominant leg" (NDL). "Single-legged hop test" (SLHT), "flamingo balance test" (FBT), "star excursion balance test" (SEBT), vertical jump-and-reach test (for anaerobic power), T-drill test and 20-meter shuttle run test (for aerobic power) were carried out. Correlation and regression analyses were performed on the data. VO2max levels showed moderate correlations with DL's "flexor peak torque" (FPT) and NDL's "extensor peak torque" (EPT) and FPT values respectively (r=0.49, r=0.38, r=0.58). FPT of NDL was a predictor of VO2max level (R2=0.33). Anaerobic power has a relationship with EPT of NDL (r=0.43) and T-drill test with EPT and FPT values of both DL and NDL respectively (r=-0.35, r=-0.63, r=-0.53, r=-0.58). EPT of NDL was a predictor for anaerobic power (R2=0.19) and FPT of DL for agility (R2=0.40). Nonparametric linear regression results showed that EPT is a predictor in DL (median slope=-0.71, P=0.01), and FPT in NDL (median slope=-0.90, P=0.006) for FBT. FPT was a predictor of SEBT scores for both legs (0.13

Astroinformatics as a New Research Field. UkrVO Astroinformation Resources: Tasks and Prospective

NASA Astrophysics Data System (ADS)

Vavilova, I. B.

The data-oriented astronomy has allowed classifying the Astroinformatics as a new academic research field, which covers various multi-disciplinary applications of the e-Astronomy. Among them are the data modeling, data mining, metadata standards development, data access, digital astronomical databases, image archives and visualization, machine learning, statistics and other computational methods and software for work with astronomical survey and catalogues with their teta- topeta-scale astroinformation resource. In this review we describe briefly the astroinformatics applications and software/services performed for different astronomical tasks in frame of the VIrtual Roentgen and Gamma Observatory (VIRGO) and Ukrainian VirtualObservatory (UkrVO). Among them there are projects based on the archival space-born data of X-ray and gamma space observatories and on the Joint Digitized Archive (JDA) database of astroplate network collections. The UkrVO JDA DR1 deals with the star catalogues (FON, Polar zone, open clusters, GRB star fields) as well as the UkrVO JDA DR2 deals with the Solar System bodies (giant and small planets, satellites, astronomical heritage images).

Imaging Nanometer Phase Coexistence at Defects During the Insulator-Metal Phase Transformation in VO2 Thin Films by Resonant Soft X-ray Holography.

PubMed

Vidas, Luciana; Günther, Christian M; Miller, Timothy A; Pfau, Bastian; Perez-Salinas, Daniel; Martínez, Elías; Schneider, Michael; Gührs, Erik; Gargiani, Pierluigi; Valvidares, Manuel; Marvel, Robert E; Hallman, Kent A; Haglund, Richard F; Eisebitt, Stefan; Wall, Simon

2018-05-18

We use resonant soft X-ray holography to image the insulator-metal phase transition in vanadium dioxide with element and polarization specificity and nanometer spatial resolution. We observe that nanoscale inhomogeneity in the film results in spatial-dependent transition pathways between the insulating and metallic states. Additional nanoscale phases form in the vicinity of defects which are not apparent in the initial or final states of the system, which would be missed in area-integrated X-ray absorption measurements. These intermediate phases are vital to understand the phase transition in VO 2 , and our results demonstrate how resonant imaging can be used to understand the electronic properties of phase-separated correlated materials obtained by X-ray absorption.

Orientation effect on microwave dielectric properties of Si-integrated Ba0.6Sr0.4TiO3 thin films for frequency agile devices

NASA Astrophysics Data System (ADS)

Kim, Hyun-Suk; Hyun, Tae-Seon; Kim, Ho-Gi; Kim, Il-Doo; Yun, Tae-Soon; Lee, Jong-Chul

2006-07-01

The effect of texture with (100) and (110) preferred orientations on dielectric properties of Ba0.6Sr0.4TiO3 (BST) thin films grown on SrO (9nm) and CeO2 (70nm ) buffered Si substrates, respectively, was investigated. The coplanar waveguide (CPW) phase shifter using (100) oriented BST films on SrO buffered Si exhibited a much-enhanced figure of merit of 24.7°/dB, as compared to that (10.2°/dB) of a CPW phase shifter using (110) oriented BST films on CeO2 buffered Si at 12GHz. This work demonstrates that the microwave properties of the Si-integrated BST thin films are highly correlated with crystal orientation.

Epitaxial growth and dielectric properties of Pb0.4Sr0.6TiO3 thin films on (00l)-oriented metallic Li0.3Ni0.7O2 coated MgO substrates

NASA Astrophysics Data System (ADS)

Li, X. T.; Du, P. Y.; Mak, C. L.; Wong, K. H.

2007-06-01

Highly (00l)-oriented Li0.3Ni0.7O2 thin films have been fabricated on (001) MgO substrates by pulsed laser deposition. The Pb0.4Sr0.6TiO3 (PST40) thin film deposited subsequently also shows a significant (00l)-oriented texture. Both the PST40 and Li0.3Ni0.7O2 have good epitaxial behavior. The epitaxial growth of the PST40 thin film is more perfect with the Li0.3Ni0.7O2 buffer layer due to the less distortion in the film. The dielectric tunability of the PST40 thin film with Li0.3Ni0.7O2 buffer layer therefore reaches 70%, which is 75% higher than that without Li0.3Ni0.7O2 buffer layer, and the dielectric loss of the PST40 thin film is 0.06.

VO{sub 2} precipitates for self-protected optical surfaces

DOEpatents

Gea, L.A.; Boatner, L.A.

1999-03-23

A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al{sub 2}O{sub 3}), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO{sub 2} precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al{sub 2}O{sub 3} host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at ca. 77 C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally ``switchable`` surface region on Al{sub 2}O{sub 3}. 5 figs.

X-Ray Spectroscopy of Ultra-Thin Oxide/Oxide Heteroepitaxial Films: A Case Study of Single-Nanometer VO2/TiO2.

PubMed

Quackenbush, Nicholas F; Paik, Hanjong; Woicik, Joseph C; Arena, Dario A; Schlom, Darrell G; Piper, Louis F J

2015-08-21

Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm), contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the properties of the epilayer from the bulk. This is especially true for oxide on oxide systems. Here, we have employed a combination of hard X-ray photoelectron spectroscopy (HAXPES) and angular soft X-ray absorption spectroscopy (XAS) to study epitaxial VO2/TiO2 (100) films ranging from 7.5 to 1 nm. We observe a low-temperature (300 K) insulating phase with evidence of vanadium-vanadium (V-V) dimers and a high-temperature (400 K) metallic phase absent of V-V dimers irrespective of film thickness. Our results confirm that the metal insulator transition can exist at atomic dimensions and that biaxial strain can still be used to control the temperature of its transition when the interfaces are atomically sharp. More generally, our case study highlights the benefits of using non-destructive XAS and HAXPES to extract out information regarding the interfacial quality of the epilayers and spectroscopic signatures associated with exotic phenomena at these dimensions.

Doping induced c-axis oriented growth of transparent ZnO thin film

NASA Astrophysics Data System (ADS)

Mistry, Bhaumik V.; Joshi, U. S.

2018-04-01

c-Axis oriented In doped ZnO (IZO) transparent conducting thin films were optimized on glass substrate using sol gel spin coating method. The Indium content in ZnO was varied systematically and the structural parameters were studied. Along with the crystallographic properties, the optoelectronic and electrical properties of IZO thin films were investigated in detail. The IZO thin films revealed hexagonal wurtzite structure. It was found that In doping in ZnO promotes the c-axis oriented growth of the thin films deposited on amorphous substrate. The particle size of the IZO films were increase as doping content increases from 2% to 5%. The 2% In doped ZnO film show electrical resistivity of 0.11 Ω cm, which is far better than the reported value for ZnO thin film. Better than 75% average optical transmission was estimated in the wavelength range from 400-800 nm. Systematic variartions in the electron concentration and band gap was observed with increasing In doping. Note worthy finding is that, with suitable amount of In doping improves not only transparency and conductivity but also improves the preferred orientation of the oxide thin film.

Metal-Insulator crossover in SrVO3 thin film

NASA Astrophysics Data System (ADS)

Wang, Gaomin; Wang, Zhen; Saghayezhian, Mohammad; Chen, Chen; Chen, Lina; Guo, Hangwen; Zhu, Yimei; Zhang, Jiandi

Paramagnetic metallic oxide SrVO3 (SVO) represents a prototype system for the study of the mechanism behind thickness-induced metal-to-insulator transition (MIT) or crossover due to its simple structure and itinerancy. Here SrVO3 thin films with different thicknesses were obtained through the layer-by-layer growth by laser Molecular Beam Epitaxy on SrTiO3 (001) surface. Ultraviolet Photoemission Spectroscopy and Scanning Tunneling Spectroscopy measurements confirm a MIT at the thickness of 3 unit cell, while atomically resolved Scanning Transmission Electron Microscopy and Electron Energy Loss Spectroscopy analysis reveal the depletion of Sr, change of V-valence and expansion of the out-of-plane lattice constant in the first three unit cell above the interface, thus different from the rest of the films. The existence of significant amount of oxygen vacancies is proposed, which is also supported by X-ray Photoelectron Spectroscopy, therefore providing a possible explanation of MIT. This work is primarily supported by U.S. DOE under Grant No. DOE DE-SC0002136. G.W. was supported by U.S. NSF under Grant No. DMR 16088865.

Virtual Observatory Interfaces to the Chandra Data Archive

NASA Astrophysics Data System (ADS)

Tibbetts, M.; Harbo, P.; Van Stone, D.; Zografou, P.

2014-05-01

The Chandra Data Archive (CDA) plays a central role in the operation of the Chandra X-ray Center (CXC) by providing access to Chandra data. Proprietary interfaces have been the backbone of the CDA throughout the Chandra mission. While these interfaces continue to provide the depth and breadth of mission specific access Chandra users expect, the CXC has been adding Virtual Observatory (VO) interfaces to the Chandra proposal catalog and observation catalog. VO interfaces provide standards-based access to Chandra data through simple positional queries or more complex queries using the Astronomical Data Query Language. Recent development at the CDA has generalized our existing VO services to create a suite of services that can be configured to provide VO interfaces to any dataset. This approach uses a thin web service layer for the individual VO interfaces, a middle-tier query component which is shared among the VO interfaces for parsing, scheduling, and executing queries, and existing web services for file and data access. The CXC VO services provide Simple Cone Search (SCS), Simple Image Access (SIA), and Table Access Protocol (TAP) implementations for both the Chandra proposal and observation catalogs within the existing archive architecture. Our work with the Chandra proposal and observation catalogs, as well as additional datasets beyond the CDA, illustrates how we can provide configurable VO services to extend core archive functionality.

Fabrication of field-effect transistor utilizing oriented thin film of octahexyl-substituted phthalocyanine and its electrical anisotropy based on columnar structure

NASA Astrophysics Data System (ADS)

Ohmori, Masashi; Nakatani, Mitsuhiro; Kajii, Hirotake; Miyamoto, Ayano; Yoneya, Makoto; Fujii, Akihiko; Ozaki, Masanori

2018-03-01

Field-effect transistors with molecularly oriented thin films of metal-free non-peripherally octahexyl-substituted phthalocyanine (C6PcH2), which characteristically form a columnar structure, have been fabricated, and the electrical anisotropy of C6PcH2 has been investigated. The molecularly oriented thin films of C6PcH2 were prepared by the bar-coating technique, and the uniform orientation in a large area and the surface roughness at a molecular level were observed by polarized spectroscopy and atomic force microscopy, respectively. The field effect mobilities parallel and perpendicular to the column axis of C6PcH2 were estimated to be (1.54 ± 0.24) × 10-2 and (2.10 ± 0.23) × 10-3 cm2 V-1 s-1, respectively. The electrical anisotropy based on the columnar structure has been discussed by taking the simulated results obtained by density functional theory calculation into consideration.

The Representation of Orientation in Macaque V2: Four Stripes Not Three

PubMed Central

Felleman, Daniel J.; Lim, Heejin; Xiao, Youping; Wang, Yi; Eriksson, Anastasia; Parajuli, Arun

2015-01-01

Area V2 of macaque monkeys is traditionally thought to consist of 3 distinct functional compartments with characteristic cortical connections and functional properties. Orientation selectivity is one property that has frequently been used to distinguish V2 stripes, however, this receptive field property has been found in a high percentage of neurons across V2 compartments. Using quantitative intrinsic cortical imaging, we derived maps of preferred orientation, orientation selectivity, and orientation gradient in thin stripes, thick stripes, and interstripes in area V2. Orientation-selective responses were found in each V2 stripe, but the magnitude and organization of orientation selectivity differed significantly from stripe to stripe. Remarkably, the 2 pale stripes flanking each cytochrome oxidase dense stripe differed significantly in their representation of orientation resulting in their distinction as type-I and type-II interstripes. V2 orientation maps are characterized by clockwise and anticlockwise “orientation pinwheels”, but unlike V1, they are not homogeneously distributed across V2. Furthermore, V2 stripes contain large-scale sequences of preferred orientation. These analyses demonstrate that V2 consists of 4 distinct functional compartments; thick stripes and type-II interstripes, which are strongly orientation selective and thin stripes and type-I interstripes, which are significantly less selective for orientation and exhibit larger orientation gradient magnitudes. PMID:24614951

Tm:GdVO4 microchip laser Q-switched by a Sb2Te3 topological insulator

NASA Astrophysics Data System (ADS)

Loiko, Pavel; Bogusławski, Jakub; Serres, Josep Maria; Kifle, Esrom; Kowalczyk, Maciej; Mateos, Xavier; Sotor, Jarosław; Zybała, Rafał; Mars, Krzysztof; Mikuła, Andrzej; Aguiló, Magdalena; Díaz, Francesc; Griebner, Uwe; Petrov, Valentin

2018-02-01

We report on the first application of a topological insulator based on antimony telluride (Sb2Te3) as a saturable absorber (SA) in a bulk microchip laser. The transmission-type SA consisted of a thin film of Sb2Te3 (thickness: 3 nm) deposited on a glass substrate by pulsed magnetron sputtering. The saturable absorption of the Sb2Te3 film was confirmed for ns-long pulses. The microchip laser was based on a Tm:GdVO4 crystal diode-pumped at 802 nm. In the continuous-wave regime, this laser generated 3.54 W at 1905-1921 nm with a slope efficiency η of 37%. The Q-switched laser generated a maximum average output power of 0.70 W at 1913 nm. The pulse energy and duration were 3.5 μJ and 223 ns, respectively, at a repetition rate of 200 kHz. The Sb2Te3 SAs are promising for passively Q-switched waveguide lasers at 2 μm.

Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium

NASA Astrophysics Data System (ADS)

Jain, N.; Zhu, Y.; Maurya, D.; Varghese, R.; Priya, S.; Hudait, M. K.

2014-01-01

We have investigated the structural and band alignment properties of nanoscale titanium dioxide (TiO2) thin films deposited on epitaxial crystallographic oriented Ge layers grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy. The TiO2 thin films deposited at low temperature by physical vapor deposition were found to be amorphous in nature, and high-resolution transmission electron microscopy confirmed a sharp heterointerface between the TiO2 thin film and the epitaxially grown Ge with no traceable interfacial layer. A comprehensive assessment on the effect of substrate orientation on the band alignment at the TiO2/Ge heterointerface is presented by utilizing x-ray photoelectron spectroscopy and spectroscopic ellipsometry. A band-gap of 3.33 ± 0.02 eV was determined for the amorphous TiO2 thin film from the Tauc plot. Irrespective of the crystallographic orientation of the epitaxial Ge layer, a sufficient valence band-offset of greater than 2 eV was obtained at the TiO2/Ge heterointerface while the corresponding conduction band-offsets for the aforementioned TiO2/Ge system were found to be smaller than 1 eV. A comparative assessment on the effect of Ge substrate orientation revealed a valence band-offset relation of ΔEV(100) > ΔEV(111) > ΔEV(110) and a conduction band-offset relation of ΔEC(110) > ΔEC(111) > ΔEC(100). These band-offset parameters are of critical importance and will provide key insight for the design and performance analysis of TiO2 for potential high-κ dielectric integration and for future metal-insulator-semiconductor contact applications with next generation of Ge based metal-oxide field-effect transistors.

Controlled crystal growth of layered-perovskite thin films as an approach to study their basic properties

NASA Astrophysics Data System (ADS)

Watanabe, Takayuki; Funakubo, Hiroshi

2006-09-01

This article describes the current progress in thin bismuth layer-structured ferroelectric films (BLSFs) including SrBi2Ta2O9 and (Bi,La)4Ti3O12, particularly those developed in the last ten years. BLSF thin films can be applied to ferroelectric random access memories because of their durable fatigue-free properties and lead-free composition. We will briefly introduce epitaxial thin films grown on a variety of substrates. Because of the difficulty in growing single crystals of sufficient size to characterize the ferroelectric behavior in specific crystal growth directions, we will characterize epitaxially grown thin films to obtain basic information about the anisotropic switching behavior, which is important for evaluating the performance of emerging materials. We will then discuss the fiber-textured growth on the (111)Pt-covered Si substrates of SrBi2Ta2O9 and Bi4Ti3O12 thin films. Because we expect that the spread crystal orientation will affect the bit-to-bit errors, we believe that the fiber-textured growth and the characterization technique for the deposited film orientation are interesting from a practical standpoint. Another specific challenge of thin film growth is the growth of a-axis-(polar axis)-oriented films. a-/b-axis-oriented films are characterized both crystallographically and by electric hysteresis loop. The hysteresis performance was in accordance with the volume fraction of the a /b domains; however, no evidence for 90° switching of the b domain by an external electric field was obtained. The control of film orientation also allows systematic studies on the effects of a structural modification and relation between spontaneous polarization and Curie temperature, examples of which are given in this paper. After a short description of the piezoelectric properties, we will conclude with a summary and the future prospects of BLSF thin films for research and applications.

X-Ray Spectroscopy of Ultra-Thin Oxide/Oxide Heteroepitaxial Films: A Case Study of Single-Nanometer VO2/TiO2

PubMed Central

Quackenbush, Nicholas F.; Paik, Hanjong; Woicik, Joseph C.; Arena, Dario A.; Schlom, Darrell G.; Piper, Louis F. J.

2015-01-01

Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm), contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the properties of the epilayer from the bulk. This is especially true for oxide on oxide systems. Here, we have employed a combination of hard X-ray photoelectron spectroscopy (HAXPES) and angular soft X-ray absorption spectroscopy (XAS) to study epitaxial VO2/TiO2 (100) films ranging from 7.5 to 1 nm. We observe a low-temperature (300 K) insulating phase with evidence of vanadium-vanadium (V-V) dimers and a high-temperature (400 K) metallic phase absent of V-V dimers irrespective of film thickness. Our results confirm that the metal insulator transition can exist at atomic dimensions and that biaxial strain can still be used to control the temperature of its transition when the interfaces are atomically sharp. More generally, our case study highlights the benefits of using non-destructive XAS and HAXPES to extract out information regarding the interfacial quality of the epilayers and spectroscopic signatures associated with exotic phenomena at these dimensions. PMID:28793516

X-ray Spectroscopy of Ultra-thin Oxide/oxide Heteroepitaxial Films: A Case Study of Single-nanometer VO2/TiO2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quackenbush, Nicholas F.; Paik, Hanjong; Woicik, Joseph C.

2015-08-21

Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm), contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the properties of the epilayer from the bulk. This is especially true for oxide on oxide systems. Here, we have employed a combination of hard X-ray photoelectron spectroscopy (HAXPES) and angular soft X-ray absorption spectroscopy (XAS) to study epitaxial VO2/TiO2 (100) films ranging from 7.5 to 1 nm. We observe amore » low-temperature (300 K) insulating phase with evidence of vanadium-vanadium (V-V) dimers and a high-temperature (400 K) metallic phase absent of V-V dimers irrespective of film thickness. Results confirm that the metal insulator transition can exist at atomic dimensions and that biaxial strain can still be used to control the temperature of its transition when the interfaces are atomically sharp. Generally, our case study highlights the benefits of using non-destructive XAS and HAXPES to extract out information regarding the interfacial quality of the epilayers and spectroscopic signatures associated with exotic phenomena at these dimensions.« less

Perpendicular Orientation Control without Interfacial Treatment of RAFT-Synthesized High-χ Block Copolymer Thin Films with Sub-10 nm Features Prepared via Thermal Annealing.

PubMed

Nakatani, Ryuichi; Takano, Hiroki; Chandra, Alvin; Yoshimura, Yasunari; Wang, Lei; Suzuki, Yoshinori; Tanaka, Yuki; Maeda, Rina; Kihara, Naoko; Minegishi, Shinya; Miyagi, Ken; Kasahara, Yuusuke; Sato, Hironobu; Seino, Yuriko; Azuma, Tsukasa; Yokoyama, Hideaki; Ober, Christopher K; Hayakawa, Teruaki

2017-09-20

In this study, a series of perpendicular lamellae-forming poly(polyhedral oligomeric silsesquioxane methacrylate-block-2,2,2-trifluoroethyl methacrylate)s (PMAPOSS-b-PTFEMAs) was developed based on the bottom-up concept of creating a simple yet effective material by tailoring the chemical properties and molecular composition of the material. The use of silicon (Si)-containing hybrid high-χ block copolymers (BCPs) provides easy access to sub-10 nm feature sizes. However, as the surface free energies (SFEs) of Si-containing polymers are typically vastly lower than organic polymers, this tends to result in the selective segregation of the inorganic block onto the air interface and increased difficulty in controlling the BCP orientation in thin films. Therefore, by balancing the SFEs between the organic and inorganic blocks through the use of poly(2,2,2-trifluoroethyl methacrylate) (PTFEMA) on the organic block, a polymer with an SFE similar to Si-containing polymers, orientation control of the BCP domains in thin films becomes much simpler. Herein, perpendicularly oriented BCP thin films with a χ eff value of 0.45 were fabricated using simple spin-coating and thermal annealing processes under ambient conditions. The thin films displayed a minimum domain size of L 0 = 11 nm, as observed via atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Furthermore, directed self-assembly (DSA) of the BCP on a topographically prepatterned substrate using the grapho-epitaxy method was used to successfully obtain perpendicularly oriented lamellae with a half pitch size of ca. 8 nm.

Jumping and hopping in elite and amateur orienteering athletes and correlations to sprinting and running.

PubMed

Hébert-Losier, Kim; Jensen, Kurt; Holmberg, Hans-Christer

2014-11-01

Jumping and hopping are used to measure lower-body muscle power, stiffness, and stretch-shortening-cycle utilization in sports, with several studies reporting correlations between such measures and sprinting and/or running abilities in athletes. Neither jumping and hopping nor correlations with sprinting and/or running have been examined in orienteering athletes. The authors investigated squat jump (SJ), countermovement jump (CMJ), standing long jump (SLJ), and hopping performed by 8 elite and 8 amateur male foot-orienteering athletes (29 ± 7 y, 183 ± 5 cm, 73 ± 7 kg) and possible correlations to road, path, and forest running and sprinting performance, as well as running economy, velocity at anaerobic threshold, and peak oxygen uptake (VO(2peak)) from treadmill assessments. During SJs and CMJs, elites demonstrated superior relative peak forces, times to peak force, and prestretch augmentation, albeit lower SJ heights and peak powers. Between-groups differences were unclear for CMJ heights, hopping stiffness, and most SLJ parameters. Large pairwise correlations were observed between relative peak and time to peak forces and sprinting velocities; time to peak forces and running velocities; and prestretch augmentation and forest-running velocities. Prestretch augmentation and time to peak forces were moderately correlated to VO(2peak). Correlations between running economy and jumping or hopping were small or trivial. Overall, the elites exhibited superior stretch-shortening-cycle utilization and rapid generation of high relative maximal forces, especially vertically. These functional measures were more closely related to sprinting and/or running abilities, indicating benefits of lower-body training in orienteering.

Effect of substrates on the molecular orientation of silicon phthalocyanine dichloride thin films

NASA Astrophysics Data System (ADS)

Deng, Juzhi; Baba, Yuji; Sekiguchi, Tetsuhiro; Hirao, Norie; Honda, Mitsunori

2007-05-01

Molecular orientations of silicon phthalocyanine dichloride (SiPcCl2) thin films deposited on three different substrates have been measured by near-edge x-ray absorption fine structure (NEXAFS) spectroscopy using linearly polarized synchrotron radiation. The substrates investigated were highly oriented pyrolitic graphite (HOPG), polycrystalline gold and indium tin oxide (ITO). For thin films of about five monolayers, the polarization dependences of the Si K-edge NEXAFS spectra showed that the molecular planes of SiPcCl2 on three substrates were nearly parallel to the surface. Quantitative analyses of the polarization dependences revealed that the tilted angle on HOPG was only 2°, which is interpreted by the perfect flatness of the HOPG surface. On the other hand, the tilted angle on ITO was 26°. Atomic force microscopy (AFM) observation of the ITO surface showed that the periodicity of the horizontal roughness is of the order of a few nanometres, which is larger than the molecular size of SiPcCl2. It is concluded that the morphology of the top surface layer of the substrate affects the molecular orientation of SiPcCl2 molecules not only for mono-layered adsorbates but also for multi-layered thin films.

Switching of magnetic easy-axis using crystal orientation for large perpendicular coercivity in CoFe2O4 thin film

PubMed Central

Shirsath, Sagar E.; Liu, Xiaoxi; Yasukawa, Yukiko; Li, Sean; Morisako, Akimitsu

2016-01-01

Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is necessary for a variety of applications, particularly in magnetic recording media. A strong (111) orientation is successfully achieved in the CoFe2O4 (CFO) thin film at relatively low substrate temperature of 100 °C, whereas the (311)-preferred randomly oriented CFO is prepared at room temperature by the DC magnetron sputtering technique. The oxygen-deficient porous CFO film after post-annealing gives rise to compressive strain perpendicular to the film surface, which induces large perpendicular coercivity. We observe the coercivity of 11.3 kOe in the 40-nm CFO thin film, which is the highest perpendicular coercivity ever achieved on an amorphous SiO2/Si substrate. The present approach can guide the systematic tuning of the magnetic easy axis and coercivity in the desired direction with respect to crystal orientation in the nanoscale regime. Importantly, this can be achieved on virtually any type of substrate. PMID:27435010

Modifying ultrafast optical response of sputtered VOX nanostructures in a broad spectral range by altering post annealing atmosphere

NASA Astrophysics Data System (ADS)

Kürüm, U.; Yaglioglu, H. G.; Küçüköz, B.; Oksuzoglu, R. M.; Yıldırım, M.; Yağcı, A. M.; Yavru, C.; Özgün, S.; Tıraş, T.; Elmali, A.

2015-01-01

Nanostructured VOX thin films were grown in a dc magnetron sputter system under two different Ar:O2 gas flow ratios. The films were annealed under vacuum and various ratios of O2/N2 atmospheres. The insulator-to-metal transition properties of the thin films were investigated by temperature dependent resistance measurement. Photo induced insulator-to-metal transition properties were investigated by Z-scan and ultrafast white light continuum pump probe spectroscopy measurements. Experiments showed that not only insulator-to-metal transition, but also wavelength dependence (from NIR to VIS) and time scale (from ns to ultrafast) of nonlinear optical response of the VOX thin films could be fine tuned by carefully adjusting post annealing atmosphere despite different initial oxygen content in the production. Fabricated VO2 thin films showed reflection change in the visible region due to photo induced phase transition. The results have general implications for easy and more effective fabrication of the nanostructured oxide systems with controllable electrical, optical, and ultrafast optical responses.

High performance VO2 thin films fabricated by room-temperature reactive magnetron sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Zhan, Yongjun; Xiao, Xiudi; Lu, Yuan; Cao, Ziyi; Cheng, Haoliang; Shi, Jifu; Xu, Gang

2017-10-01

The VOx thin films are successfully prepared on glass substrate by reactive magnetron sputtering at room-temperature, and subsequently annealed by rapid thermal annealing system in N2 from 0.5Pa to 10000Pa. The effects of annealing pressure on the optical performance and phase transition temperature (Tc) of VOx thin films are systematically investigated. The results show that the VOx thin films exhibit good performance with Tlum of 28.17%, ΔTsol of 12.69%, and Tc of 42. The annealing pressure had an obvious influence on the grain size, which can be attributed to light scattering effects by gas molecule. Compared with oxygen vacancy defects, the grain size plays a decisive role in the regulation of Tc. The restricting the growth of grain can be reduced the Tc, and a little deterioration effect on optical performance can be observed. In addition, the method in this paper not only depressed the Tc, but also simplified the process and improved efficiency, which will provide guidance for the preparation and application of VOx thin films.

Ab-initio calculations of structural, electronic, and optical properties of Zn3(VO4)2

NASA Astrophysics Data System (ADS)

Ahmed, Nisar; Mukhtar, S.; Gao, Wei; Zafar Ilyas, Syed

2018-03-01

The structural, electronic, and optical properties of Zn3(VO4)2 are investigated using full potential linearized augmented plane wave (FP-LAPW) method within the framework of density functional theory (DFT). Various approaches are adopted to treat the exchange and correlation potential energy such as generalized gradient approximation (GGA), GGA+U, and the Tran–Blaha modified Becke–Johnson (TB-mBJ) potential. The calculated band gap of 3.424 eV by TB-mBJ is found to be close to the experimental result (3.3 eV). The optical anisotropy is analyzed through optical constants, such as dielectric function and absorption coefficient along parallel and perpendicular crystal orientations. The absorption coefficient reveals high absorption (1.5× {10}6 {cm}}-1) of photons in the ultraviolet region.

Combined Thermochromic And Plasmonic: Optical Responses In Novel Nanocomposite Au-VO2 Films Prepared By RF Inverted Cylindrical Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Kana, J. B. Kana; Ndjaka, J. M.; Manyala, N.; Nemraoui, O.; Beye, A. C.; Maaza, M.

2008-09-01

We prepared gold/Vanadium dioxide nanocomposites thin films by the rf reactive inverted cylindrical magnetron sputtering (ICMS) for the first time and report their enhanced surface plasmon resonance (SPR) tunable shift reversibility. ICMS has been attracting much attention for its ability for uniform coating of three-dimensional objects and high-rate deposition of dielectric materials. To investigate the optical properties of gold nanoparticles embedded in an active matrix (VO2) composite film was synthesized on corning glass substrates for several substrate temperatures ranging from 400 °C to 600 °C. The X-ray diffraction results demonstrated that the Au and VO2 were well crystallized. The optical transmission properties were measured from 300nm to 1100nm and the absorption peak due to the surface plasmon resonance (SPR) of Au nanoparticles were observed. Under external temperature stimuli, the tunable reversibility of the SPR shift was observed when the nanocomposites temperature varies from 20 °C to 100 °C. The enhancement of this shift of SPR was observed as the substrate temperature increases and it was found that the shift of SPR increased rapidly with increasing substrate temperature but then remained constant at ˜57 nm for substrate temperature higher than 500 °C.

Morin transition temperature in (0001)-oriented α-Fe{sub 2}O{sub 3} thin film and effect of Ir doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimomura, Naoki, E-mail: shimomura@ecei.tohoku.ac.jp; Pati, Satya Prakash; Sato, Yuji

2015-05-07

The structural properties and Morin transition in c-plane-oriented α-Fe{sub 2}O{sub 3} and Ir-doped α-Fe{sub 2}O{sub 3} thin films have been investigated. The enhancement of the Morin transition temperature (T{sub M}) in α-Fe{sub 2}O{sub 3} film by Ir doping has been demonstrated. The T{sub M} in the c-plane-oriented α-Fe{sub 2}O{sub 3} thin film was determined from the temperature-dependent in-plane magnetization and change of coercivity (H{sub c}); this T{sub M} value was found close to that of bulk α-Fe{sub 2}O{sub 3}. The spin directions of non-doped and Ir-doped α-Fe{sub 2}O{sub 3} at room temperature were also estimated from conversion electron Mössbauer spectroscopymore » measurements. We confirmed that Ir doping dramatically enhances the T{sub M} of α-Fe{sub 2}O{sub 3} thin film.« less

Ultra-thin Oxide Membranes: Synthesis and Carrier Transport

NASA Astrophysics Data System (ADS)

Sim, Jai Sung

Self-supported freestanding membranes are films that are devoid of any underlying supporting layers. The key advantage of such structures is that, due to the lack of substrate effects - both mechanical and chemical, the true native properties of the material can be probed. This is crucial since many of the studies done on materials that are used as freestanding membranes are done as films clamped to substrates or in the bulk form. This thesis focuses on the synthesis and fabrication as well as electrical studies of free standing ultrathin < 40nm oxide membranes. It also is one of the first demonstrations for electrically probing nanoscale freestanding oxide membranes. Fabrication of such membranes is non-trivial as oxide materials are often brittle and difficult to handle. Therefore, it requires an understanding of thin plate mechanics coupled with controllable thin film deposition process. Taking things a step further, to electrically probe these membranes required design of complex device architecture and extensive optimization of nano-fabrication processes. The challenges and optimized fabrication method of such membranes are demonstrated. Three materials are probed in this study, VO2, TiO2, and CeO2. VO2 for understanding structural considerations for electronic phase change and nature of ionic liquid gating, TiO2 and CeO2 for understanding surface conduction properties and surface chemistry. The VO2 study shows shift in metal-insulator transition (MIT) temperature arising from stress relaxation and opening of the hysteresis. The ionic liquid gating studies showed reversible modulation of channel resistance and allowed distinguishing bulk process from the surface effects. Comparing the ionic liquid gating experiments to hydrogen doping experiments illustrated that ionic liquid gating can be a surface limited electrostatic effect, if the critical voltage threshold is not exceeded. TiO2 study shows creation of non-stoichiometric forms under ion milling. Utilizing focused ion beam milling, thin membranes of Ti xOy of 100-300 nm thickness have been created. TEM studies indicated polycrystallinity and presence of twins in the FIB-milled nanowalls. Compositional analysis in the transmission electron microscope also showed reduced content of oxygen, confirming non-stoichiometry. Temperature dependence of the electrical resistivity of the nanowall showed semiconducting behavior with an activation energy different from that of TiO2 single crystals and was attributed to formation of TinO2n-1 phases after FIB processing. The CeO2 study involved high temperature conductivity studies on substrate-free self-supported nano-crystalline ceria membranes up to 800 K. Increasing conductivity with oxygen partial pressure directly opposing the behavior of thin film devices 'clamped' by substrate has been observed. This illustrate that the relaxed nature of free standing membranes, and increased surface to volume ratio enables more sensitive electrical response to oxygen adsorption which could have implications for their use in oxygen storage devices, solid oxide fuel cells, and chemical sensors. The work in this thesis advances the understanding of materials in freestanding membrane form and advances fabrication techniques that have not been explored before, having implications for sensors, actuators, SOFC, memristors, and physics of quasi-2D materials.

Pump-probe STM light emission spectroscopy for detection of photo-induced semiconductor-metal phase transition of VO2

NASA Astrophysics Data System (ADS)

Sakai, Joe; Katano, Satoshi; Kuwahara, Masashi; Uehara, Yoichi

2017-10-01

We attempted to observe pump-probe scanning tunneling microscopy (STM)-light emission (LE) from a VO2 thin film grown on a rutile TiO2(0 0 1) substrate, with an Ag tip fixed over a semiconducting domain. Laser pulses from a Ti:sapphire laser (wavelength 920 nm pulse width less than 1.5 ps) irradiated the tip-sample gap as pump and probe light sources. With a photon energy of 2.7 eV, suggesting phase transition from semiconducting monoclinic (M) to metallic rutile (R) phases in relation to the electronic band structure, faint LE was observed roughly 30 ps after the irradiation of the pump pulse, followed by retention for roughly 20 ps. The incident energy fluence of the pump pulse at the gap was five orders of magnitude lower than the threshold value for reported photo-induced M-R phase transition. The mechanism that makes it possible to reduce the threshold fluence is discussed.

Pump-probe STM light emission spectroscopy for detection of photo-induced semiconductor-metal phase transition of VO2.

PubMed

Sakai, Joe; Katano, Satoshi; Kuwahara, Masashi; Uehara, Yoichi

2017-10-11

We attempted to observe pump-probe scanning tunneling microscopy (STM)-light emission (LE) from a VO 2 thin film grown on a rutile TiO 2 (0 0 1) substrate, with an Ag tip fixed over a semiconducting domain. Laser pulses from a Ti:sapphire laser (wavelength 920 nm; pulse width less than 1.5 ps) irradiated the tip-sample gap as pump and probe light sources. With a photon energy of 2.7 eV, suggesting phase transition from semiconducting monoclinic (M) to metallic rutile (R) phases in relation to the electronic band structure, faint LE was observed roughly 30 ps after the irradiation of the pump pulse, followed by retention for roughly 20 ps. The incident energy fluence of the pump pulse at the gap was five orders of magnitude lower than the threshold value for reported photo-induced M-R phase transition. The mechanism that makes it possible to reduce the threshold fluence is discussed.

The self-paced VO2max test to assess maximal oxygen uptake in highly trained runners.

PubMed

Hogg, James S; Hopker, James G; Mauger, Alexis R

2015-03-01

The novel self-paced maximal-oxygen-uptake (VO2max) test (SPV) may be a more suitable alternative to traditional maximal tests for elite athletes due to the ability to self-regulate pace. This study aimed to examine whether the SPV can be administered on a motorized treadmill. Fourteen highly trained male distance runners performed a standard graded exercise test (GXT), an incline-based SPV (SPVincline), and a speed-based SPV (SPVspeed). The GXT included a plateau-verification stage. Both SPV protocols included 5×2-min stages (and a plateau-verification stage) and allowed for self-pacing based on fixed increments of rating of perceived exertion: 11, 13, 15, 17, and 20. The participants varied their speed and incline on the treadmill by moving between different marked zones in which the tester would then adjust the intensity. There was no significant difference (P=.319, ES=0.21) in the VO2max achieved in the SPVspeed (67.6±3.6 mL·kg(-1)·min(-1), 95%CI=65.6-69.7 mL·kg(-1)·min(-1)) compared with that achieved in the GXT (68.6±6.0 mL·kg(-1)·min(-1), 95%CI=65.1-72.1 mL·kg(-1)·min(-1)). Participants achieved a significantly higher VO2max in the SPVincline (70.6±4.3 mL·kg(-1)·min(-1), 95%CI=68.1-73.0 mL·kg(-1)·min(-1)) than in either the GXT (P=.027, ES=0.39) or SPVspeed (P=.001, ES=0.76). The SPVspeed protocol produces VO2max values similar to those obtained in the GXT and may represent a more appropriate and athlete-friendly test that is more oriented toward the variable speed found in competitive sport.

Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method

NASA Astrophysics Data System (ADS)

Cheng, Zhenxiang; Kannan, Chinna Venkatasamy; Ozawa, Kiyoshi; Kimura, Hideo; Wang, Xiaolin

2006-07-01

Samarium doped bismuth titanate thin films with the composition of Bi3.25Sm0.75Ti3O12 and with strong preferred orientations along the c axis and the (117) direction were fabricated on Pt /TiO2/SiO2/Si substrate by pulsed laser ablation. Measurements on Pt /BSmT/Pt capacitors showed that the c-axis oriented film had a small remanent polarization (2Pr) of 5μC/cm2, while the highly (117) oriented film showed a 2Pr value of 54μC/cm2 at an electrical field of 268kV/cm and a coercive field Ec of 89kV/cm. This is different from the sol-gel derived c-axis oriented Bi3.15Sm0.85Ti3O12 film showing a 2Pr value of 49μC/cm2.

Ultrafast far-infrared studies of vanadates &mdash Multiple routes for an insulator to metal transition

NASA Astrophysics Data System (ADS)

Liu, Mengkun

The metal insulator transition in vanadates has been studied for decades and yet new discoveries still spring up revealing new physics, especially among two of the most studied members: Vanadium sesquioxide (V20 3) and Vanadium dioxide (VO2). Although subtleties abound, both of the materials have first order insulator to metal phase transitions that are considered to be related to strong electron-electron (e-e) correlation. Further, ultrafast spectroscopy of strongly correlated materials has generated great interest in the field given the potential to dynamically distinguish the difference between electronic (spin) response versus lattice responses due to the associated characteristic energy and time scales. In this thesis, I mainly focus on utilizing ultrafast optical and THz spectroscopy to study phase transition dynamics in high quality V20 3 and VO2 thin films epitaxially grown on different substrates. The main findings of the thesis are: (1) Despite the fact that the insulator to metal transition (IMT) in V203 is electron-correlation driven, lattice distortion plays an important role. Coherent oscillations in the far-infrared conductivity are observed resulting from coherent acoustic phonon modulation of the bandwidth W. The same order of lattice distortion induces less of an effect on the electron transport in VO2 in comparison to V203. This is directly related to the difference in latent heat of the phase transitions in VO2 and V203. (2) It is possible for the IMT to occur with very little structural change in epitaxial strained VO2 films, like in the case of Cr doped or strained V203. However, in V02, this necessitates a large strain which is only possible by clamping to a substrate with larger c axis parameter through epitaxial growth. This is demonstrated for VO 2 films on TiO2 substrates. (3) Initiating an ultrafast photo-induced insulator-to-metal transition (IMT) is not only possible with above bandgap excitation, but also possible with high-field far-infrared excitation. With the help of the field enhancement in metamaterial split ring resonator gaps, we obtain picosecond THz electric field transients of several MV/cm which is sufficient to drive the insulator to metal transition in V02.

A Confined Fabrication of Perovskite Quantum Dots in Oriented MOF Thin Film.

PubMed

Chen, Zheng; Gu, Zhi-Gang; Fu, Wen-Qiang; Wang, Fei; Zhang, Jian

2016-10-26

Organic-inorganic hybrid lead organohalide perovskites are inexpensive materials for high-efficiency photovoltaic solar cells, optical properties, and superior electrical conductivity. However, the fabrication of their quantum dots (QDs) with uniform ultrasmall particles is still a challenge. Here we use oriented microporous metal-organic framework (MOF) thin film prepared by liquid phase epitaxy approach as a template for CH 3 NH 3 PbI 2 X (X = Cl, Br, and I) perovskite QDs fabrication. By introducing the PbI 2 and CH 3 NH 3 X (MAX) precursors into MOF HKUST-1 (Cu 3 (BTC) 2 , BTC = 1,3,5-benzene tricarboxylate) thin film in a stepwise approach, the resulting perovskite MAPbI 2 X (X = Cl, Br, and I) QDs with uniform diameters of 1.5-2 nm match the pore size of HKUST-1. Furthermore, the photoluminescent properties and stability in the moist air of the perovskite QDs loaded HKUST-1 thin film were studied. This confined fabrication strategy demonstrates that the perovskite QDs loaded MOF thin film will be insensitive to air exposure and offers a novel means of confining the uniform size of the similar perovskite QDs according to the oriented porous MOF materials.

Effect of annealing temperature on thermochromic properties of vanadium dioxide thin films deposited by organic sol-gel method

NASA Astrophysics Data System (ADS)

Wu, Jing; Huang, Wanxia; Shi, Qiwu; Cai, Jinghan; Zhao, Dong; Zhang, Yubo; Yan, Jiazhen

2013-03-01

This paper described the synthesis of vanadium dioxide (VO2) thin films on mica substrates with different annealing temperatures by an organic sol-gel method. We performed X-ray diffraction, scanning electron microscope and optical transmission measurements to investigate the effect of the annealing temperature on the crystalline structure, morphology, and phase transition properties of these films. The results showed that a polycrystalline structure with high crystallinity and compact surface at the annealing temperature of 500 °C. The film exhibited a V6O13 phase and a flat surface with small grain size at 440 °C. By contrast, the VnO2n-1 appeared when the annealing temperature at 540 °C, and the film surface split into segregation of spherical grain and aggregates of continuously dendritic particles. Accordingly, the optimal annealing temperature was 500 °C using the organic sol-gel method. And it turned out that the films mainly contained VO2 (M) phase at room temperature with high content of V4+ valence. Particularly, the films showed different changes in the infrared transmittance and hysteresis width during the phase transition. The largest transformation of the infrared transmittance before and after MIT was 73%, while the narrowest temperature hysteresis width was 8 °C at 500 °C.

Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment.

PubMed

Xu, Lei; Chen, Qian; Liao, Lei; Liu, Xingqiang; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Jiang, Changzhong; Wang, Jinlan; Li, Jinchai

2016-03-02

Hydrogenation is one of the effective methods for improving the performance of ZnO thin film transistors (TFTs), which originate from the fact that hydrogen (H) acts as a defect passivator and a shallow n-type dopant in ZnO materials. However, passivation accompanied by an excessive H doping of the channel region of a ZnO TFT is undesirable because high carrier density leads to negative threshold voltages. Herein, we report that Mg/H codoping could overcome the trade-off between performance and reliability in the ZnO TFTs. The theoretical calculation suggests that the incorporation of Mg in hydrogenated ZnO decrease the formation energy of interstitial H and increase formation energy of O-vacancy (VO). The experimental results demonstrate that the existence of the diluted Mg in hydrogenated ZnO TFTs could be sufficient to boost up mobility from 10 to 32.2 cm(2)/(V s) at a low carrier density (∼2.0 × 10(18) cm(-3)), which can be attributed to the decreased electron effective mass by surface band bending. The all results verified that the Mg/H codoping can significantly passivate the VO to improve device reliability and enhance mobility. Thus, this finding clearly points the way to realize high-performance metal oxide TFTs for low-cost, large-volume, flexible electronics.

Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films

NASA Astrophysics Data System (ADS)

Rupp, Jonathan A. J.; Querré, Madec; Kindsmüller, Andreas; Besland, Marie-Paule; Janod, Etienne; Dittmann, Regina; Waser, Rainer; Wouters, Dirk J.

2018-01-01

This study investigates resistive switching in amorphous undoped and Cr-doped vanadium oxide thin films synthesized by sputtering deposition at low oxygen partial pressure. Two different volatile threshold switching characteristics can occur as well as a non-volatile bipolar switching mechanism, depending on device stack symmetry and Cr-doping. The two threshold switching types are associated with different crystalline phases in the conduction filament created during an initial forming step. The first kind of threshold switching, observed for undoped vanadium oxide films, was, by its temperature dependence, proven to be associated with a thermally triggered insulator-to-metal transition in a crystalline VO2 phase, whereas the threshold switch observed in chromium doped films is stable up to 90 °C and shows characteristics of an electronically induced Mott transition. This different behaviour for undoped versus doped films has been attributed to an increased stability of V3+ due to the Cr3+ doping (as evidenced by X-ray photoelectron spectroscopy analysis), probably favouring the creation of a crystalline Cr-doped V2O3 phase (rather than a Cr-doped VO2 phase) during the energetic forming step. The symmetric Pt/a-(VCr)Ox/Pt device showing high temperature stable threshold switching may find interesting applications as a possible new selector device for resistive switching memory (ReRAM) crossbar arrays.

Amorphous and Crystalline Vanadium Oxides as High-Energy and High-Power Cathodes for Three-Dimensional Thin-Film Lithium Ion Batteries.

PubMed

Mattelaer, Felix; Geryl, Kobe; Rampelberg, Geert; Dendooven, Jolien; Detavernier, Christophe

2017-04-19

Flexible wearable electronics and on-chip energy storage for wireless sensors drive rechargeable batteries toward thin-film lithium ion batteries. To enable more charge storage on a given surface, higher energy density materials are required, while faster energy storage and release can be obtained by going to thinner films. Vanadium oxides have been examined as cathodes in classical and thin-film lithium ion batteries for decades, but amorphous vanadium oxide thin films have been mostly discarded. Here, we investigate the use of atomic layer deposition, which enables electrode deposition on complex three-dimensional (3D) battery architectures, to obtain both amorphous and crystalline VO 2 and V 2 O 5 , and we evaluate their thin-film cathode performance. Very high volumetric capacities are found, alongside excellent kinetics and good cycling stability. Better kinetics and higher volumetric capacities were observed for the amorphous vanadium oxides compared to their crystalline counterparts. The conformal deposition of these vanadium oxides on silicon micropillar structures is demonstrated. This study shows the promising potential of these atomic layer deposited vanadium oxides as cathodes for 3D all-solid-state thin-film lithium ion batteries.

Preparation and characterization of epitaxial MgO thin film by atmospheric-pressure metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Zeng, J. M.; Wang, H.; Shang, S. X.; Wang, Z.; Wang, M.

1996-12-01

Magnesium oxide (MgO) thin films have been prepared on Si(100), {SiO2(100) }/{Si} and {Pt(111) }/{Si} substrates by atmospheric-pressure metalorganic chemical vapor deposition (AP-MOCVD) for the first time. The relationship between the temperature of substrates ( Ts) and crystallographic orientations was also investigated. Magnesium acetylacetonate [Mg(CH 2COCH 2COCH 3) 2] was used as the metalorganic source. The relatively low temperature of substrates is about 480°C and the MgO thin films obtained were uniform, dense and well-ordered single crystal. X-ray diffraction experiments provided evidence that the MgO thin films on Si(100) ( Ts ≈ 400-680°C), {SiO2}/{Si} and {Pt}/{Si} were fully textured with (100) orientation. The deliquescent character of MgO thin films was also studied.

Structural and magnetic characterization of the one-dimensional S = 5/2 antiferromagnetic chain system SrMn(VO 4)(OH)

DOE PAGES

Sanjeewa, Liurukara D.; Garlea, Vasile O.; McGuire, Michael A.; ...

2016-06-06

The descloizite-type compound, SrMn(VO 4)(OH), was synthesized as large single crystals (1-2mm) using a high-temperature high-pressure hydrothermal technique. X-ray single crystal structure analysis reveals that the material crystallizes in the acentric orthorhombic space group of P2 12 12 1 (no. 19), Z = 4. The structure exhibits a one-dimensional feature, with [MnO 4] chains propagating along the a-axis which are interconnected by VO 4 tetrahedra. Raman and infrared spectra were obtained to identify the fundamental vanadate and hydroxide vibrational modes. Magnetization data reveal a broad maximum at approximately 80 K, arising from one-dimensional magnetic correlations with intrachain exchange constant ofmore » J/k B = 9.97(3) K between nearest Mn neighbors and a canted antiferromagnetic behavior below T N = 30 K. Single crystal neutron diffraction at 4 K yielded a magnetic structure solution in the lower symmetry of the magnetic space group P2 1 with two unique chains displaying antiferromagnetically ordered Mn moments oriented nearly perpendicular to the chain axis. Lastly, the presence of the Dzyaloshinskii Moriya antisymmetric exchange interaction leads to a slight canting of the spins and gives rise to a weak ferromagnetic component along the chain direction.« less

Formation and characterization of preferred oriented perovskite thin films on single-crystalline substrates

NASA Astrophysics Data System (ADS)

Chen, Lung-Chien; Chen, Cheng-Chiang; Hsiung Chang, Sheng; Lee, Kuan-Lin; Tseng, Zong-Liang; Chen, Sheng-Hui; Kuo, Hao-Chung

2018-06-01

Three single-crystalline (Al2O3, GaN/Al2O3 and InAs) substrates are used to assist the formation of crystallographically preferred oriented CH3NH3PbI3 (MAPbI3) thin films. The estimation of the lattice mismatch at the MAPbI3/substrate interface and water-droplet contact angle experiments indicate that the formation of a preferred oriented MAPbI3 thin film is induced by the single-crystalline substrate and is insensitive to the surface wettibility of the substrate. Moreover, the experimental results suggest that the lattice mismatch at the MAPbI3/single-crystalline semiconductor interface can strongly influence the photovoltaic performance of tandem solar cells.

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

PubMed

George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

2015-06-24

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

Room temperature chemical synthesis of lead selenide thin films with preferred orientation

NASA Astrophysics Data System (ADS)

Kale, R. B.; Sartale, S. D.; Ganesan, V.; Lokhande, C. D.; Lin, Yi-Feng; Lu, Shih-Yuan

2006-11-01

Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH3COO)2 as Pb2+ and Na2SeSO3 as Se2- ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV.

Symmetry Breaking in Side Chains Leading to Mixed Orientations and Improved Charge Transport in Isoindigo-alt-Bithiophene Based Polymer Thin Films.

PubMed

Xue, Guobiao; Zhao, Xikang; Qu, Ge; Xu, Tianbai; Gumyusenge, Aristide; Zhang, Zhuorui; Zhao, Yan; Diao, Ying; Li, Hanying; Mei, Jianguo

2017-08-02

The selection of side chains is important in design of conjugated polymers. It not only affects their intrinsic physical properties, but also has an impact on thin film morphologies. Recent reports suggested that a face-on/edge-on bimodal orientation observed in polymer thin films may be responsible for a three-dimensional (3D) charge transport and leads to dramatically improved mobility in donor-acceptor based conjugated polymers. To achieve a bimodal orientation in thin films has been seldom explored from the aspect of molecular design. Here, we demonstrate a design strategy involving the use of asymmetric side chains that enables an isoindigo-based polymer to adopt a distinct bimodal orientation, confirmed by the grazing incidence X-ray diffraction. As a result, the polymer presents an average high mobility of 3.8 ± 0.7 cm 2 V -1 s -1 with a maximum value of 5.1 cm 2 V -1 s -1 , in comparison with 0.47 and 0.51 cm 2 V -1 s -1 obtained from the two reference polymers. This study exemplifies a new strategy to develop the next generation polymers through understanding the property-structure relationship.

Development of buffer layer structure for epitaxial growth of (100)/(001)Pb(Zr,Ti)O3-based thin film on (111)Si wafer

NASA Astrophysics Data System (ADS)

Hayasaka, Takeshi; Yoshida, Shinya; Tanaka, Shuji

2017-07-01

This paper reports on the development of a novel buffer layer structure, (100)SrRuO3/(100)LaNiO3/(111)Pt/(111)CeO2, for the epitaxial growth of a (100)/(001)-oriented Pb(Zr,Ti)O3 (PZT)-based thin film on a (111)Si wafer. (111)Pt and (111)CeO2 were epitaxially grown on (111)Si straightforwardly. Then, the crystal orientation was forcibly changed from (111) to (100) at the LaNiO3 layer owing to its strong (100)-self-orientation property, which enabled the cube-on-cube epitaxial growth of the subsequent (100)SrRuO3 layer and preferentially (100)/(001)-oriented PZT-based thin film. The PZT-based epitaxial thin films were comprehensively characterized in terms of the crystallinity, in-plane epitaxial relationships, piezoelectricity, and so forth. This buffer layer structure for the epitaxial growth of PZT can be applied to piezoelectric micro-electro-mechanical systems (MEMS) vibrating ring gyroscopes.

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

NASA Astrophysics Data System (ADS)

Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

2018-01-01

Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} thin films on all-oxide layers buffered silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vu, Hien Thu; Nguyen, Minh Duc, E-mail: minh.nguyen@itims.edu.vn; Inorganic Materials Science

2015-12-15

Graphical abstract: The cross sections show a very dense structure in the (001)-oriented films (c,d), while an open columnar growth structure is observed in the case of the (110)-oriented films (a,b). The (110)-oriented PZT films show a significantly larger longitudinal piezoelectric coefficient (d33{sub ,f}), but smaller transverse piezoelectric coefficient (d31{sub ,f}) than the (001) oriented films. - Highlights: • We fabricate all-oxide, epitaxial piezoelectric PZT thin films on Si. • The orientation of the films can be controlled by changing the buffer layer stack. • The coherence of the in-plane orientation of the grains and grain boundaries affects the ferroelectricmore » properties. • Good cycling stability of the ferroelectric properties of (001)-oriented PZT thin films. The (110)-oriented PZT thin films show a larger d33{sub ,f} but smaller d31{sub ,f} than the (001)-oriented films. - Abstract: Epitaxial ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) were fabricated with an extra CeO{sub 2} buffer layer (CeO{sub 2}/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33{sub ,f} coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31{sub ,f} coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between grains) of the former films.« less

Influence of acute moderate hypoxia on time to exhaustion at vVO2max in unacclimatized runners.

PubMed

Billat, V L; Lepretre, P M; Heubert, R P; Koralsztein, J P; Gazeau, F P

2003-01-01

Eight unacclimatized long-distance runners performed, on a level treadmill, an incremental test to determine the maximal oxygen uptake (VO2max) and the minimal velocity eliciting VO2max (vVO2max) in normoxia (N) and acute moderate hypoxia (H) corresponding to an altitude of 2,400 m (PIO 2 of 109 mmHg). Afterwards, on separate days, they performed two all-out constant velocity runs at vO2 max in a random order (one in N and the other in H). The decrease in VO2max between N and H showed a great degree of variability amongst subjects as VO2max decreased by 8.9 +/- 4 ml x min(-1) x kg)(-1) in H vs. N conditions (-15.3 +/- 6.3 % with a range from -7.9 % to -23.8 %). This decrease in VO2max was proportional to the value of VO2max (VO2max vs. delta VO2max N-H, r = 0.75, p = 0.03). The time run at vVO2max was not affected by hypoxia (483 +/- 122 vs. 506 +/- 148 s, in N and H, respectively, p = 0.37). However, the greater the decrease in vVO2max during hypoxia, the greater the runners increased their time to exhaustion at vVO2max (vVO2max N-H vs. tlim @vVO2max N-H, r = -0.75, p = 0.03). In conclusion, this study showed that there was a positive association between the extent of decrease in vVO2max, and the increase in run time at vVO2max in hypoxia.

Comparison of the 1.5 Mile Run Times at 7,200 Feet and Simulated 850 Feet in a Hyperoxic Room

DTIC Science & Technology

2012-03-01

Maximal Oxygen Update ( VO2 max) Test ......................................... 7 Figure 3 - VO2 Max results for Male, Female and All Subjects. * p...0.001 between Male and Female VO2 ’s. ............................................................. 11 Figure 4 - VO2 Max vs Predicted VO2 Max at 850...and 7,200 Feet ................. 12 Figure 5 - Actual VO2 Max vs Predicted VO2 Max at ALT (7,200 Feet) ....... 13 Figure 6 - VO2 Max vs Predicted

Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

DOE PAGES

Si, W.; Zhang, C.; Wu, L.; ...

2015-09-01

Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Si, Weidong, E-mail: wds@bnl.gov, E-mail: qiangli@bnl.gov; Zhang, Cheng; Wu, Lijun

2015-08-31

Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF{sub 2} crystalline substrates, respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. Withmore » large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

Formation kinetics and mechanism of metastable vacancy-dioxygen complex in neutron irradiated Czochralski silicon

NASA Astrophysics Data System (ADS)

Dong, Peng; Wang, Rong; Yu, Xuegong; Chen, Lin; Ma, Xiangyang; Yang, Deren

2017-07-01

We have quantitatively investigated the formation kinetics of metastable vacancy-dioxygen (VO2) complex in a structure of [VO + Oi], where a VO complex is trapped in a next-neighbor position to an interstitial oxygen atom (Oi). It is found that the VO annihilation is accompanied by the generation of metastable [VO + Oi] complex during annealing in the temperature range of 220-250 °C. The activation energy for [VO + Oi] generation appears at around 0.48 eV, which is much lower than the counterpart of stable VO2 complex. This indicates that the formation of [VO + Oi] complex originates from the reaction between VO and Oi. The ab initio calculations show that the formation energy of [VO + Oi] complex is larger than that of VO2 complex, which means that [VO + Oi] complex is thermodynamically unfavorable as compared to VO2 complex. However, the binding energy of [VO + Oi] complex is positive, indicating that [VO + Oi] complex is stable against decomposition of VO and Oi in silicon. It is believed that [VO + Oi] complex serves as the intermediate for VO to VO2 conversion.

Controlling phase separation in vanadium dioxide thin films via substrate engineering

DOE PAGES

Gilbert Corder, Stephanie N.; Jiang, Jianjuan; Chen, Xinzhong; ...

2017-10-23

The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. Here in this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of TiO 2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in VO 2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system aremore » directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.« less

Solid State Research, 1977:3

DTIC Science & Technology

1977-08-15

Reflectivity of CdGeAs, G.D. Holah* A. Miller* W. D. Dunnett* G.W. Iseler Solid State Commun. 23, 75 (1977) 4726 Thin-Film VO2 Submillimeter- Wave...Measure- ments 4439 X-Ray Lithographic and Pro- cessing Technologies for Fabricating Surface Relief Gratings with Profile Control < 400 A S. A...stripe-geometry lasers. The stripe width is 1 3 |i.m, and the cavity length is typically 3 80 to 400 |im. Ohmic contacts were made by

Multilayer Ni/Fe thin films as oxygen evolution catalysts for solar fuel production

NASA Astrophysics Data System (ADS)

Biset-Peiró, M.; Murcia-López, S.; Fàbrega, C.; Morante, J. R.; Andreu, T.

2017-03-01

The slow kinetics and high overpotential of the oxygen evolution reaction is one of the main limiting factors to achieve the minimum required performances of the so-called photoelectrochemical water splitting systems. An oxygen evolution catalyst (OEC) becomes essential in order to perform this process with higher efficiency. Herein, we report the physical, optical and electrochemical characterization of multilayer Ni/Fe thin films as earth-abundant OEC, to avoid the use of platinum group metals (PGM). Uniform films of thicknesses ranging from 1 to 10 nm were fabricated by sequential and alternate thermal evaporation of Ni and Fe. It was found that the successive deposition allows the fabrication of a Ni terminated surface that does not need activation due to the Fe underlayer. The lowest overpotential achieved for NiFe was 370 mV at 10 mA cm-2 and a Tafel slope of 37 mV dec-1 with 1 nm thickness and 95% transmittance. Finally, NiFe OEC was implemented on top of Mo:BiVO4 photoanodes which resulted in a reduction of the open circuit potential of 0.2 V and up to five fold increase of the oxidation efficiency at 0.7 VRHE. The results presented facilitate the practical implementation of BiVO4 photoanodes in tandem configuration for bias free photoassisted water splitting.

Combined Thermochromic And Plasmonic: Optical Responses In Novel Nanocomposite Au-VO{sub 2} Films Prepared By RF Inverted Cylindrical Magnetron Sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kana, J. B. Kana; Department of physics, University of Yaounde I, P.O. Box 812 Yaounde; Ndjaka, J. M.

2008-09-23

We prepared gold/Vanadium dioxide nanocomposites thin films by the rf reactive inverted cylindrical magnetron sputtering (ICMS) for the first time and report their enhanced surface plasmon resonance (SPR) tunable shift reversibility. ICMS has been attracting much attention for its ability for uniform coating of three-dimensional objects and high-rate deposition of dielectric materials. To investigate the optical properties of gold nanoparticles embedded in an active matrix (VO{sub 2}) composite film was synthesized on corning glass substrates for several substrate temperatures ranging from 400 deg. C to 600 deg. C. The X-ray diffraction results demonstrated that the Au and VO{sub 2} weremore » well crystallized. The optical transmission properties were measured from 300nm to 1100nm and the absorption peak due to the surface plasmon resonance (SPR) of Au nanoparticles were observed. Under external temperature stimuli, the tunable reversibility of the SPR shift was observed when the nanocomposites temperature varies from 20 deg. C to 100 deg. C. The enhancement of this shift of SPR was observed as the substrate temperature increases and it was found that the shift of SPR increased rapidly with increasing substrate temperature but then remained constant at {approx}57 nm for substrate temperature higher than 500 deg. C.« less

Cardiorespiratory fitness is differentially associated with cortical thickness in young and older adults

PubMed Central

Williams, Victoria; Hayes, Jasmeet P.; Forman, Daniel E.; Salat, David H.; Sperling, Reisa A.; Verfaellie, Mieke; Hayes, Scott M.

2016-01-01

Aging is associated with reductions in gray matter volume and cortical thickness. One factor that may play a role in mitigating age-associated brain decline is cardiorespiratory fitness (CRF). Although previous work has identified a positive association between CRF and gray matter volume, the relationship between CRF and cortical thickness, which serves as a more sensitive indicator of gray matter integrity, has yet to be assessed in healthy young and older adults. To address this gap in the literature, 32 young and 29 older adults completed treadmill-based progressive maximal exercise testing to assess CRF (peak VO2), and structural magnetic resonance imaging (MRI) to determine vertex-wise surface-based cortical thickness metrics. Results indicated a significant CRF by age group interaction such that Peak VO2 was associated with thicker cortex in older adults but with thinner cortex in young adults. Notably, the majority of regions demonstrating a positive association between peak VO2 and cortical thickness in older adults overlapped with brain regions showing significant age-related cortical thinning. Further, when older adults were categorized as high or low fit based on normative data, we observed a stepwise pattern whereby cortex was thickest in young adults, intermediate in high fit older adults and thinnest in low fit older adults. Overall, these results support the notion that CRF-related neuroplasticity may reduce although not eliminate age-related cortical atrophy. PMID:27989841

Cardiorespiratory fitness is differentially associated with cortical thickness in young and older adults.

PubMed

Williams, Victoria J; Hayes, Jasmeet P; Forman, Daniel E; Salat, David H; Sperling, Reisa A; Verfaellie, Mieke; Hayes, Scott M

2017-02-01

Aging is associated with reductions in gray matter volume and cortical thickness. One factor that may play a role in mitigating age-associated brain decline is cardiorespiratory fitness (CRF). Although previous work has identified a positive association between CRF and gray matter volume, the relationship between CRF and cortical thickness, which serves as a more sensitive indicator of gray matter integrity, has yet to be assessed in healthy young and older adults. To address this gap in the literature, 32 young and 29 older adults completed treadmill-based progressive maximal exercise testing to assess CRF (peak VO 2 ), and structural magnetic resonance imaging (MRI) to determine vertex-wise surface-based cortical thickness metrics. Results indicated a significant CRF by age group interaction such that Peak VO 2 was associated with thicker cortex in older adults but with thinner cortex in young adults. Notably, the majority of regions demonstrating a positive association between peak VO 2 and cortical thickness in older adults overlapped with brain regions showing significant age-related cortical thinning. Further, when older adults were categorized as high or low fit based on normative data, we observed a stepwise pattern whereby cortex was thickest in young adults, intermediate in high fit older adults and thinnest in low fit older adults. Overall, these results support the notion that CRF-related neuroplasticity may reduce although not eliminate age-related cortical atrophy. Published by Elsevier Inc.

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates.

PubMed

Imajo, T; Toko, K; Takabe, R; Saitoh, N; Yoshizawa, N; Suemasu, T

2018-01-16

Semiconductor strontium digermanide (SrGe 2 ) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe 2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe 2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe 2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe 2 to high-efficiency thin-film solar cells.

Stress Analysis of Adhesively Bonded Repairs to Fibre Composite Structures,

DTIC Science & Technology

1981-03-01

which is bonded to a thin sheet of fibre composite material. The x and y axes are taken in a plane parallel to the midsurface of the sheet with the z...SHEET vI X1 FIG. 1 AXIS SYSTEM IN PATCH related to the displacements at the midsurface of the patch, which we will denote by uo, vo and w, and the...displacements at the midsurface of the sheet, which we will denote by u, vs and w, by the following expression: T ( =uo - us +f7 ’ f/fg + (VO - v, +f 7 3)f4

Relation of oxygen uptake to work rate in prepubertal healthy children - reference for VO2/W-slope and effect on cardiorespiratory fitness assessment.

PubMed

Tompuri, Tuomo; Lintu, Niina; Laitinen, Tomi; Lakka, Timo A

2017-08-09

Exercise testing by cycle ergometer allows to observe the interaction between oxygen uptake (VO 2 ) and workload (W), and VO 2 /W-slope can be used as a diagnostic tool. Respectively, peak oxygen uptake (VO 2 PEAK ) can be estimated by maximal workload. We aim to determine reference for VO 2 /W-slope among prepubertal children and define agreement between estimated and measured VO 2 PEAK . A total of 38 prepubertal children (20 girls) performed a maximal cycle ergometer test with respiratory gas analysis. VO 2 /W-slopes were computed using linear regression. Agreement analysis by Bland and Altman for estimated and measured VO 2 PEAK was carried out including limits of agreement (LA). Determinants for VO 2 /W-slopes and estimation bias were defined. VO2/W-slope was in both girls and boys ≥9·4 and did not change with exercise level, but the oxygen cost of exercise was higher among physically more active children. Estimated VO 2 PEAK had 6·4% coefficient of variation, and LA varied from 13% underestimation to 13% overestimation. Bias had a trend towards underestimation along lean mass proportional VO 2 PEAK . The primary determinant for estimation bias was VO2/W-slope (β = -0·65; P<0·001). The reference values for VO 2 /W-slope among healthy prepubertal children were similar to those published for adults and among adolescents. Estimated and measured VO 2 PEAK should not be considered to be interchangeable because of the variation in the relationship between VO 2 and W. On other hand, variation in the relationship between VO 2 and W enables that VO 2 /W-slope can be used as a diagnostic tool. © 2017 Scandinavian Society of Clinical Physiology and Nuclear Medicine. Published by John Wiley & Sons Ltd.

Symmetry Breaking in Side Chains Leading to Mixed Orientations and Improved Charge Transport in Isoindigo- alt -Bithiophene Based Polymer Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Guobiao; Zhao, Xikang; Qu, Ge

The selection of side chains is important in design of conjugated polymers. It not only affects their intrinsic physical properties, but also has an impact on thin film morphologies. Recent reports suggested that a face-on/edge-on bimodal orientation observed in polymer thin films may be responsible for a three-dimensional (3D) charge transport and leads to dramatically improved mobility in donor–acceptor based conjugated polymers. To achieve a bimodal orientation in thin films has been seldom explored from the aspect of molecular design. Here, we demonstrate a design strategy involving the use of asymmetric side chains that enables an isoindigo-based polymer to adoptmore » a distinct bimodal orientation, confirmed by the grazing incidence X-ray diffraction. As a result, the polymer presents an average high mobility of 3.8 ± 0.7 cm2 V–1 s–1 with a maximum value of 5.1 cm2 V–1 s–1, in comparison with 0.47 and 0.51 cm2 V–1 s–1 obtained from the two reference polymers. This study exemplifies a new strategy to develop the next generation polymers through understanding the property-structure relationship.« less

Ab Initio Metadynamics Study of the VO2+/VO2+ Redox Reaction Mechanism at the Graphite Edge/Water Interface.

PubMed

Jiang, Zhen; Klyukin, Konstantin; Alexandrov, Vitaly

2018-06-20

Redox flow batteries (RFBs) are promising electrochemical energy storage systems, for which development is impeded by a poor understanding of redox reactions occurring at electrode/electrolyte interfaces. Even for the conventional all-vanadium RFB chemistry employing V 2+ /V 3+ and VO 2 + /VO 2+ couples, there is still no consensus about the reaction mechanism, electrode active sites, and rate-determining step. Herein, we perform Car-Parrinello molecular dynamics-based metadynamics simulations to unravel the mechanism of the VO 2 + /VO 2+ redox reaction in water at the oxygen-functionalized graphite (112̅0) edge surface serving as a representative carbon-based electrode. Our results suggest that during the battery discharge aqueous VO 2 + /VO 2+ species adsorb at the surface C-O groups as inner-sphere complexes, exhibiting faster adsorption/desorption kinetics than V 2+ /V 3+ , at least at low vanadium concentrations considered in our study. We find that this is because (i) VO 2 + /VO 2+ conversion does not involve the slow transfer of an oxygen atom, (ii) protonation of VO 2 + is spontaneous and coupled to interfacial electron transfer in acidic conditions to enable VO 2+ formation, and (iii) V 3+ found to be strongly bound to oxygen groups of the graphite surface features unfavorable desorption kinetics. In contrast, the reverse process taking place upon charging is expected to be more sluggish for the VO 2 + /VO 2+ redox couple because of both unfavorable deprotonation of the VO 2+ water ligands and adsorption/desorption kinetics.

The influence of exercise duration at VO2 max on the off-transient pulmonary oxygen uptake phase during high intensity running activity.

PubMed

Billat, V L; Hamard, L; Koralsztein, J P

2002-12-01

The purpose of this study was to examine the influence of time run at maximal oxygen uptake (VO2 max) on the off-transient pulmonary oxygen uptake phase after supra-lactate threshold runs. We hypothesised: 1) that among the velocities eliciting VO2 max there is a velocity threshold from which there is a slow component in the VO2-off transient, and 2) that at this velocity the longer the duration of this time at VO2 max (associated with an accumulated oxygen kinetics since VO2 can not overlap VO2 max), the longer is the off-transient phase of oxygen uptake kinetics. Nine long-distance runners performed five maximal tests on a synthetic track (400 m) while breathing through the COSMED K4b2 portable, telemetric metabolic analyser: i) an incremental test which determined VO2 max, the minimal velocity associated with VO2 max (vVO2 max) and the velocity at the lactate threshold (vLT), ii) and in a random order, four supra-lactate threshold runs performed until exhaustion at vLT + 25, 50, 75 and 100% of the difference between vLT and vVO2 max (vdelta25, vdelta50, vdelta75, vdelta100). At vdelta25, vdelta50 (= 91.0 +/- 0.9% vVO2 max) and vdelta75, an asymmetry was found between the VO2 on (double exponential) and off-transient (mono exponential) phases. Only at vdelta75 there was at positive relationship between the time run at VO2 max (%tlimtot) and the VO2 recovery time constant (Z = 1.8, P = 0.05). In conclusion, this study showed that among the velocities eliciting VO2 max, vdelta75 is the velocity at which the longer the duration of the time at VO2 max, the longer is the off-transient phase of oxygen uptake kinetics. It may be possible that at vdelta50 there is not an accumulated oxygen deficit during the plateau of VO2 at VO2 max and that the duration of the time at VO2 max during the exhaustive runs at vdelta100, could be too short to induce an accumulating oxygen deficit affecting the oxygen recovery.

Structural and electrical properties of large area epitaxial VO2 films grown by electron beam evaporation

NASA Astrophysics Data System (ADS)

Théry, V.; Boulle, A.; Crunteanu, A.; Orlianges, J. C.; Beaumont, A.; Mayet, R.; Mennai, A.; Cosset, F.; Bessaudou, A.; Fabert, M.

2017-02-01

Large area (up to 4 squared inches) epitaxial VO2 films, with a uniform thickness and exhibiting an abrupt metal-insulator transition with a resistivity ratio as high as 2.85 × 10 4 , have been grown on (001)-oriented sapphire substrates by electron beam evaporation. The lattice distortions (mosaicity) and the level of strain in the films have been assessed by X-ray diffraction. It is demonstrated that the films grow in a domain-matching mode where the distortions are confined close to the interface which allows growth of high-quality materials despite the high film-substrate lattice mismatch. It is further shown that a post-deposition high-temperature oxygen annealing step is crucial to ensure the correct film stoichiometry and provide the best structural and electrical properties. Alternatively, it is possible to obtain high quality films with a RF discharge during deposition, which hence do not require the additional annealing step. Such films exhibit similar electrical properties and only slightly degraded structural properties.

Aqueous citrato-oxovanadate(IV) precursor solutions for VO2: synthesis, spectroscopic investigation and thermal analysis.

PubMed

Peys, Nick; Adriaensens, Peter; Van Doorslaer, Sabine; Gielis, Sven; Peeters, Ellen; De Dobbelaere, Christopher; De Gendt, Stefan; Hardy, An; Van Bael, Marlies K

2014-09-07

An aqueous precursor solution, containing citrato-VO(2+) complexes, is synthesized for the formation of monoclinic VO2. With regard to the decomposition of the VO(2+) complexes towards vanadium oxide formation, it is important to gain insights into the chemical structure and transformations of the precursor during synthesis and thermal treatment. Hence, the conversion of the cyclic [V4O12](4-) ion to the VO(2+) ion in aqueous solution, using oxalic acid as an acidifier and a reducing agent, is studied by (51)Vanadium nuclear magnetic resonance spectroscopy. The citrate complexation of this VO(2+) ion and the differentiation between a solution containing citrato-oxalato-VO(2+) and citrato-VO(2+) complexes are studied by electron paramagnetic resonance and Fourier transform infra-red spectroscopy. In both solutions, the VO(2+) containing complex is mononuclear and has a distorted octahedral geometry with a fourfold R-CO2(-) ligation at the equatorial positions and likely a fifth R-CO2(-) ligation at the axial position. Small differences in the thermal decomposition pathway between the gel containing citrato-oxalato-VO(2+) complexes and the oxalate-free gel containing citrato-VO(2+) complexes are observed between 150 and 200 °C in air and are assigned to the presence of (NH4)2C2O4 in the citrato-oxalato-VO(2+) solution. Both precursor solutions are successfully used for the formation of crystalline vanadium oxide nanostructures on SiO2, after thermal annealing at 500 °C in a 0.1% O2 atmosphere. However, the citrato-oxalato-VO(2+) and the oxalate-free citrato-VO(2+) solution result in the formation of monoclinic V6O13 and monoclinic VO2, respectively.

Vanadyl (IV) and vanadate (V) binding to selected endogenous phosphate, carboxyl, and amino ligands; calculations of cellular vanadium species distribution.

PubMed

Nechay, B R; Nanninga, L B; Nechay, P S

1986-11-15

Vanadium enters cells as vanadate (V) where it is reduced to vanadyl (IV), VO2+. Vanadate species at plasma pH, H2VO4-, and HVO4(2-) are referred to as VO3-. To gain an insight into the subcellular vanadium distribution we measured the binding of VO3- and VO2+ to extra- and intracellular ligands, and calculated free and bound fractions of these ions for expected in vivo conditions. The association constants (K) were determined by the pH shift caused by an addition of VOSO4 or NaVO3 to individual ligand solutions at 20 degrees C and a pH equal to the pK of the reactive groups. The pk's for binding of VO2+ were ATP, 5.9; ADP, 5.5; AMP, 5.1; Pi 4.3; creatine phosphate (CP), 3.6; glutamic acid, 3.4; aspartic acid, 3.1; human serum albumin, 3.1; glutathione, 2.7; ascorbic acid, 3.3; citric acid, 4.0. The pk of VO3- and human serum albumin was 3.3 and of that VO3- and glutathione was 4.2. VO3- did not bind to ATP, even via Mg2+ or Ca2+ bridges. We calculated that in cells approximately 1% of total VO2+ is unbound, which is 10(-10)-10(-9) M since published values for total vanadium (mainly VO2+) concentrations in tissues are on the order of 10(-8)-10(-7) M. Free VO2+ may be even less because of binding to additional ligands not considered and due to spontaneous hydrolysis to VOOH+ and VO(OH)2(2+) at intracellular pH. The binding of VO2+ to each ligand was corrected for presence of multiple ligands and competition by H+, K+, and Mg2+. In cells with no CP, up to 70% of VO2+ is bound to phosphates and up to 29% to proteins; in cells with 30 mM CP (as in muscle), approximately 95% is bound to phosphates (CP binds up to 61% of total VO2+) and approximately 4% to proteins; in cells with 2 mM ascorbic acid (as in brain), the vitamin binds approximately 3% of total VO2+. These binding values apply for the total VO2+ concentration range of 10(-8)-10(-5) M. The intracellular binding and a reducing environment protect the freshly reduced VO2+ from oxidation to VO3- that would otherwise occur at neutral pH. This strong affinity of VO2+ primarily for phosphates also explains the mechanism for the intracellular accumulation of vanadium which is a factor in previously observed transport of VO3- into cells.(ABSTRACT TRUNCATED AT 400 WORDS)

Specific Effects of Oxygen Molecule and Plasma on Thin-Film Growth of Y-Ba-Cu-O and Bi-Sr-(Ca)-Cu-O Systems

NASA Astrophysics Data System (ADS)

Endo, Tamio; Horie, Munehiro; Hirate, Naoki; Itoh, Katsutoshi; Yamada, Satoshi; Tada, Masaki; Itoh, Ken-ichi; Sugiyama, Morihiro; Sano, Shinji; Watabe, Kinji

1998-07-01

Thin films of a-oriented YBa2Cu3Ox (YBCO), Ca-doped c-oriented Bi2(Sr,Ca)2CuOx and nondoped c-oriented Bi2Sr2CuOx (Bi2201) were prepared at low temperatures by ion beam sputtering with supply of oxygen molecules or plasma. The plasma enhances crystal growth of the a-YBCO and Ca-doped Bi2201 phases. This can be interpreted in terms of their higher surface energies. The growth and quality of nondoped Bi2201 are improved with the supply of oxygen molecules. This particular result could be interpreted by the collision process between the oxygen molecules and the sputtered particles.

Exertional oxygen uptake kinetics: a stamen of stamina?

PubMed

Whipp, Brian J; Rossiter, H B; Ward, S A

2002-04-01

The fundamental pulmonary O(2) uptake (.VO(2)) response to moderate, constant-load exercise can be characterized as (d.VO(2)/dt)(tau)+Delta.VO(2) (t)=Delta.VO(2SS) where Delta.VO(2SS) is the steady-state response, and tau is the time constant, with the .VO(2) kinetics reflecting intramuscular O(2) uptake (.QO(2)) kinetics, to within 10%. The role of phosphocreatine (PCr) turnover in .QO(2) control can be explored using (31)P-MR spectroscopy, simultaneously with .VO(2). Although tau.VO(2) and tauPCr vary widely among subjects (approx. 20-65 s), they are not significantly different from each other, either at the on- or off-transient. A caveat to interpreting the "well-fit" exponential is that numerous units of similar Delta.VO(2SS) but with a wide tau distribution can also yield a .VO(2) response with an apparent single tau. This tau is, significantly, inversely correlated with lactate threshold and .VO(2max)(but is poorly predictive; a frail stamen, therefore), consistent with tau not characterizing a compartment with uniform kinetics. At higher intensities, the fundamental kinetics become supplemented with a slowly-developing phase, setting .VO(2)on a trajectory towards maximum .VO(2). This slow component is also demonstrable in Delta[PCr]: the decreased efficiency thereby reflecting a predominantly high phosphate-cost of force production rather than a high O(2)-cost of phosphate production. We also propose that the O(2)-deficit for the slow-component is more likely to reflect shifting Delta.VO(2SS) rather than a single one with a single tau.

Integration of the physiological factors determining endurance performance ability.

PubMed

Coyle, E F

1995-01-01

This model is used to understand the interrelationships of the physiological factors determining endurance performance ability during prolonged exercise. Early studies found that marathon runners maintain a velocity in competition that corresponds to the intensity at which lactate begins to accumulate in blood and muscle [7, 8, 19]. From this observation, the concept developed that this blood lactate threshold (LT Vo2) reflects the degree of muscular stress, glycogenolysis and fatigue. However, it was not clear whether the lactate accumulation was a result of cardiovascular limitations linked to oxygen delivery, as reflected by Vo2max [54], as opposed to metabolic factors in the exercising muscle related to the extent to which mitochondrial respiration is disturbed to maintain a given rate of O2 consumption [29, 30]. Two studies were performed to determine whether LT Vo2 was tightly coupled to Vo2max. In one study, endurance-trained ischemic heart disease patients were observed to possess a Vo2max that was 18% below that of normal master athletes who followed the patient's training program and who displayed the same performance ability as the patients. Both the patients and the normal men displayed an identical LT Vo2 (i.e., 37 ml/kg/min) (Fig. 2.5). Therefore, performance was determined primarily by LT Vo2 instead of Vo2max in this situation, albeit with abnormal subjects. In a second study we assembled two groups of competitive cyclists who were identical in Vo2max but differed by having a high or low LT Vo2 (82% vs. 66% Vo2max) [13]. When cycling at 80-88% Vo2max, the low LT group displayed more than a 2-fold higher rate of muscle glycogen use and blood lactate concentration, and as a result were able to exercise only one-half as long as the high LT group. Performance time for a given Vo2 was clearly related to LT Vo2 instead of Vo2max (Fig. 2.6). This is not to say that Vo2max plays no role in determining LT Vo2, because as in heart disease patients, it clearly sets the upper limit. Indeed, we have seen that much of the variance (i.e., 31-72%) in LT Vo2 is related to Vo2max. (Fig. 2.11.) However, improvements in performance after the first 2-3 yr of intense training are associated with improvements in LT Vo2, whereas Vo2max generally increases very little thereafter (Table 2.3). The next question concerns the factors responsible for further increases in LT Vo2 and Performance. Another major factor determining LT Vo2 is the muscle's Aerobic Enzyme Activity or mitochondrial respiratory capacity, as discussed in previous reviews [29, 30].(ABSTRACT TRUNCATED AT 400 WORDS)

Effect of limb cooling on peripheral and global oxygen consumption in neonates

PubMed Central

Hassan, I; Wickramasinghe, Y; Spencer, S

2003-01-01

Aim: To evaluate peripheral oxygen consumption (VO2) measurements using near infrared spectroscopy (NIRS) with arterial occlusion in healthy term neonates by studying the effect of limb cooling on peripheral and global VO2. Subjects and methods: Twenty two healthy term neonates were studied. Peripheral VO2 was measured by NIRS using arterial occlusion and measurement of the oxyhaemoglobin (HbO2) decrement slope. Global VO2 was measured by open circuit calorimetry. Global and peripheral VO2 was measured in each neonate before and after limb cooling. Results: In 10 neonates, a fall in forearm temperature of 2.2°C (mild cooling) decreased forearm VO2 by 19.6% (p < 0.01). Global VO2 did not change. In 12 neonates, a fall in forearm temperature of 4°C (moderate cooling) decreased forearm VO2 by 34.7% (p < 0.01). Global VO2 increased by 17.6% (p < 0.05). Conclusions: The NIRS arterial occlusion method is able to measure changes in peripheral VO2 induced by limb cooling. The changes are more pronounced with moderate limb cooling when a concomitant rise in global VO2 is observed. Change in peripheral temperature must be taken into consideration in the interpretation of peripheral VO2 measurements in neonates. PMID:12598504

Effect of limb cooling on peripheral and global oxygen consumption in neonates.

PubMed

Hassan, I A-A; Wickramasinghe, Y A; Spencer, S A

2003-03-01

To evaluate peripheral oxygen consumption (VO(2)) measurements using near infrared spectroscopy (NIRS) with arterial occlusion in healthy term neonates by studying the effect of limb cooling on peripheral and global VO(2). Twenty two healthy term neonates were studied. Peripheral VO(2) was measured by NIRS using arterial occlusion and measurement of the oxyhaemoglobin (HbO(2)) decrement slope. Global VO(2) was measured by open circuit calorimetry. Global and peripheral VO(2) was measured in each neonate before and after limb cooling. In 10 neonates, a fall in forearm temperature of 2.2 degrees C (mild cooling) decreased forearm VO(2) by 19.6% (p < 0.01). Global VO(2) did not change. In 12 neonates, a fall in forearm temperature of 4 degrees C (moderate cooling) decreased forearm VO(2) by 34.7% (p < 0.01). Global VO(2) increased by 17.6% (p < 0.05). The NIRS arterial occlusion method is able to measure changes in peripheral VO(2) induced by limb cooling. The changes are more pronounced with moderate limb cooling when a concomitant rise in global VO(2) is observed. Change in peripheral temperature must be taken into consideration in the interpretation of peripheral VO(2) measurements in neonates.

Analyzing optical properties of thin vanadium oxide films through semiconductor-to-metal phase transition using spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Sun, Jianing; Pribil, Greg K.

2017-11-01

We investigated the optical behaviors of vanadium dioxide (VO2) films through the semiconductor-to-metal (STM) phase transition using spectroscopic ellipsometry. Correlations between film thickness and refractive index were observed resulting from the absorbing nature of these films. Simultaneously analyzing data at multiple temperatures using Kramers-Kronig consistent oscillator models help identify film thickness. Nontrivial variations in resulting optical constants were observed through STM transition. As temperature increases, a clear increase is observed in near infrared absorption due to Drude losses that accompany the transition from semiconducting to metallic phases. Thin films grown on silicon and sapphire substrate present different optical properties and thermal hysteresis due to lattice stress and compositional differences.

IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski-Si containing carbon

NASA Astrophysics Data System (ADS)

Londos, C. A.; Andrianakis, A.; Sgourou, E. N.; Emtsev, V. V.; Ohyama, H.

2011-02-01

We report infrared absorption studies of oxygen-related defects in electron-irradiated Ge-doped Czochralski-Si. Our investigation was mainly focused on the reaction channel leading to the formation of VOn (1≤n≤6) defects. The VOn defects form mainly upon annealing, as a result of the successive aggregation of oxygen atoms in the initial VO defect produced by the irradiation: (VO+Oi→VO2+Oi→VO3+Oi→VO4,…). It was found that the ratio of the conversion of VOn to VOn+1 defects is sensitive to the Ge content of the material. In particular, the ratio of the conversion of the VO to the VO2 defects was found to decrease with the increase in Ge concentration of the samples, although the opposite trend was observed for the VO3 to VO4 conversion. However, the VO2 to VO3 conversion changes only slightly with Ge content, being practically unaffected for Ge concentrations up to 2×1020 cm-3. In the case of VO2 formation, the phenomenon was attributed to the elastic strains induced in the lattice due to the Ge presence which affects the balance between the reactions VO+Oi→VO2, VO+SiI→Oi, mainly involved in the decay of the VO and the growth of the VO2 defects. In the case of VO4 formation, the phenomenon was discussed by taking into account the enhancement of the diffusivity of the Oi atoms in the Ge-doped Si, which could lead to an enhancement of the rate of the reaction VO3+Oi→VO4. For the VO3 formation this effect is practically negligible due to the fact that at the temperatures of VO2 to VO3 conversion oxygen diffusivity is quite small. The exhibited behavior in the conversion of the VOn to VOn+1 defects (n=1,2,3) was similar in Ge-doped samples with low carbon content ([Cs]<2×1016 cm-3) and in Ge-doped samples with high carbon content ([Cs]≥1×1017 cm-3). The impact of C as well as its role in the conversion efficiency of VO to VO2 was studied by comparing the spectra in low carbon and high carbon Ge free Si material. Furthermore, a pair of bands at (1037,1051 cm-1) was attributed to the VO5 defect. The origin of another pair of bands (967,1005 cm-1) was discussed and tentatively correlated with a VOnCs structure. The role of Ge and C in the formation of the latter two pairs of bands was discussed.

Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection.

PubMed

Ding, Hong; Dwaraknath, Shyam S; Garten, Lauren; Ndione, Paul; Ginley, David; Persson, Kristin A

2016-05-25

With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO2 compounds which provides a rich chemical and structural polymorph space. We find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO2 substrates, where the VO2 brookite phase would be preferentially grown on the a-c TiO2 brookite plane while the columbite and anatase structures favor the a-b plane on the respective TiO2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. These criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available.

Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection

DOE PAGES

Ding, Hong; Dwaraknath, Shyam S.; Garten, Lauren; ...

2016-05-04

With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO 2 compounds which provides a rich chemical and structural polymorph space. Here, we find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO 2 substrates, where the VO 2 brookite phase would be preferentially grown on the a-c TiO 2 brookite plane whilemore » the columbite and anatase structures favor the a-b plane on the respective TiO 2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO 2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. Our criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available.« less

Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Hong; Dwaraknath, Shyam S.; Garten, Lauren

With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO2 compounds which provides a rich chemical and structural polymorph space. We find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO2 substrates, where the VO2 brookite phase would be preferentially grown on the a-c TiO2 brookite plane while the columbite and anatase structuresmore » favor the a-b plane on the respective TiO2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. These criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available.« less

Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Hong; Dwaraknath, Shyam S.; Garten, Lauren

With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO 2 compounds which provides a rich chemical and structural polymorph space. Here, we find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO 2 substrates, where the VO 2 brookite phase would be preferentially grown on the a-c TiO 2 brookite plane whilemore » the columbite and anatase structures favor the a-b plane on the respective TiO 2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO 2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. Our criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available.« less

Rapid hydrothermal synthesis of VO2 (B) and its conversion to thermochromic VO2 (M1).

PubMed

Popuri, Srinivasa Rao; Miclau, Marinela; Artemenko, Alla; Labrugere, Christine; Villesuzanne, Antoine; Pollet, Michaël

2013-05-06

The present study provides a rapid way to obtain VO2 (B) under economical and environmentally friendly conditions. VO2 (B) is one of the well-known polymorphs of vanadium dioxide and is a promising cathode material for aqueous lithium ion batteries. VO2 (B) was successfully synthesized by rapid single-step hydrothermal process using V2O5 and citric acid as precursors. The present study shows that phase-pure VO2 (B) polytype can be easily obtained at 180 °C for 2 h and 220 °C for 1 h, that is, the lowest combination of temperature and duration reported so far. The obtained VO2 (B) is characterized by X-ray powder diffraction, high-resolution scanning electron microscopy, and Fourier transform infrared spectroscopy. In addition, we present an indirect way to obtain VO2 (M1) by annealing VO2 (B) under vacuum for 1 h.

A novel inorganic precipitation-peptization method for VO2 sol and VO2 nanoparticles preparation: Synthesis, characterization and mechanism.

PubMed

Li, Yao; Jiang, Peng; Xiang, Wei; Ran, Fanyong; Cao, Wenbin

2016-01-15

In this paper, a simple, safe and cost-saving precipitation-peptization method was proposed to prepare VO2 sol by using inorganic VOSO4-NH3⋅H2O-H2O2 reactants system in air under room temperature. In this process, VOSO4 was firstly precipitated to form VO(OH)2, then monometallic species of VO(O2)(OH)(-) were formed through the coordination between VO(OH)2 and H2O2. The rearrangement of VO(O2)(OH)(-) in a nonplanar pattern and intermolecular condensation reactions result in multinuclear species. Finally, VO2 sol is prepared through the condensation reactions between the multinuclear species. After drying the obtained sol at 40°C, VO2 xerogel exhibiting monoclinic crystal structure with the space group of C2/m was prepared. The crystal structure of VO2 nanoparticles was transferred to monoclinic crystal structure with the space group of P21/c (VO2(M)) by annealing the xerogel at 550°C. Both XRD and TEM analysis indicated that the nanoparticles possess good crystallinity with crystallite size of 34.5nm as estimated by Scherrer's method. These results suggest that the VO2 sol has been prepared successfully through the proposed simple method. Copyright © 2015 Elsevier Inc. All rights reserved.

Selective UV–O3 treatment for indium zinc oxide thin film transistors with solution-based multiple active layer

NASA Astrophysics Data System (ADS)

Kim, Yu-Jung; Jeong, Jun-Kyo; Park, Jung-Hyun; Jeong, Byung-Jun; Lee, Hi-Deok; Lee, Ga-Won

2018-06-01

In this study, a method to control the electrical performance of solution-based indium zinc oxide (IZO) thin film transistors (TFTs) is proposed by ultraviolet–ozone (UV–O3) treatment on the selective layer during multiple IZO active layer depositions. The IZO film is composed of triple layers formed by spin coating and UV–O3 treatment only on the first layer or last layer. The IZO films are compared by X-ray photoelectron spectroscopy, and the results show that the atomic ratio of oxygen vacancy (VO) increases in the UV–O3 treatment on the first layer, while it decreases on last layer. The device characteristics of the bottom gated structure are also improved in the UV–O3 treatment on the first layer. This indicates that the selective UV–O3 treatment in a multi-stacking active layer is an effective method to optimize TFT properties by controlling the amount of VO in the IZO interface and surface independently.

Enhancement Strategies for Frame-To Uas Stereo Visual Odometry

NASA Astrophysics Data System (ADS)

Kersten, J.; Rodehorst, V.

2016-06-01

Autonomous navigation of indoor unmanned aircraft systems (UAS) requires accurate pose estimations usually obtained from indirect measurements. Navigation based on inertial measurement units (IMU) is known to be affected by high drift rates. The incorporation of cameras provides complementary information due to the different underlying measurement principle. The scale ambiguity problem for monocular cameras is avoided when a light-weight stereo camera setup is used. However, also frame-to-frame stereo visual odometry (VO) approaches are known to accumulate pose estimation errors over time. Several valuable real-time capable techniques for outlier detection and drift reduction in frame-to-frame VO, for example robust relative orientation estimation using random sample consensus (RANSAC) and bundle adjustment, are available. This study addresses the problem of choosing appropriate VO components. We propose a frame-to-frame stereo VO method based on carefully selected components and parameters. This method is evaluated regarding the impact and value of different outlier detection and drift-reduction strategies, for example keyframe selection and sparse bundle adjustment (SBA), using reference benchmark data as well as own real stereo data. The experimental results demonstrate that our VO method is able to estimate quite accurate trajectories. Feature bucketing and keyframe selection are simple but effective strategies which further improve the VO results. Furthermore, introducing the stereo baseline constraint in pose graph optimization (PGO) leads to significant improvements.

Effect of a prior intermittent run at vVO2max on oxygen kinetics during an all-out severe run in humans.

PubMed

Billat, V L; Bocquet, V; Slawinski, J; Laffite, L; Demarle, A; Chassaing, P; Koralsztein, J P

2000-09-01

The purpose of this study was to examine the influence of prior intermittent running at VO2max on oxygen kinetics during a continuous severe intensity run and the time spent at VO2max. Eight long-distance runners performed three maximal tests on a synthetic track (400 m) whilst breathing through the COSMED K4 portable telemetric metabolic analyser: i) an incremental test which determined velocity at the lactate threshold (vLT), VO2max and velocity associated with VO2max (vVO2max), ii) a continuous severe intensity run at vLT+50% (vdelta50) of the difference between vLT and vVO2max (91.3+/-1.6% VO2max)preceded by a light continuous 20 minute run at 50% of vVO2max (light warm-up), iii) the same continuous severe intensity run at vdelta50 with a prior interval training exercise (hard warm-up) of repeated hard running bouts performed at 100% of vVO2max and light running at 50% of vVO2max (of 30 seconds each) performed until exhaustion (on average 19+/-5 min with 19+/-5 interval repetitions). This hard warm-up speeded the VO2 kinetics: the time constant was reduced by 45% (28+/-7 sec vs 51+/-37 sec) and the slow component of VO2 (deltaVO2 6-3 min) was deleted (-143+/-271 ml x min(-1) vs 291+/-153 ml x min(-1)). In conclusion, despite a significantly lower total run time at vdelta50 (6 min 19+/-0) min 17 vs 8 min 20+/-1 min 45, p=0.02) after the intermittent warm-up at VO2max, the time spent specifically at VO2max in the severe continuous run at vdelta50 was not significantly different.

Highly c-axis-oriented monocrystalline Pb(Zr, Ti)O₃ thin films on si wafer prepared by fast cooling immediately after sputter deposition.

PubMed

Yoshida, Shinya; Hanzawa, Hiroaki; Wasa, Kiyotaka; Esashi, Masayoshi; Tanaka, Shuji

2014-09-01

We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr0.5, Ti0.5)O3 films showed reasonably large piezoelectric coefficients, e(31,f) = ~-11 C/m(2), with remarkably small dielectric constants, ϵ(r) = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.

Oriented conductive oxide electrodes on SiO2/Si and glass

DOEpatents

Jia, Quanxi; Arendt, Paul N.

2001-01-01

A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

Ventilatory threshold may be a more specific measure of aerobic capacity than peak oxygen consumption rate in persons with stroke.

PubMed

Boyne, Pierce; Reisman, Darcy; Brian, Michael; Barney, Brian; Franke, Ava; Carl, Daniel; Khoury, Jane; Dunning, Kari

2017-03-01

After stroke, aerobic deconditioning can have a profound impact on daily activities. This is usually measured by the peak oxygen consumption rate achieved during exercise testing (VO2-peak). However, VO2-peak may be distorted by motor function. The oxygen uptake efficiency slope (OUES) and VO2 at the ventilatory threshold (VO2-VT) could more specifically assess aerobic capacity after stroke, but this has not been tested. To assess the differential influence of motor function on three measures of aerobic capacity (VO2-peak, OUES, and VO2-VT) and to evaluate the inter-rater reliability of VO2-VT determination post-stroke. Among 59 persons with chronic stroke, cross-sectional correlations with motor function (comfortable gait speed [CGS] and lower extremity Fugl-Meyer [LEFM]) were compared between the different aerobic capacity measures, after adjustment for covariates, in order to isolate any distorting effect of motor function. Reliability of VO2-VT determination between three raters was assessed with intra-class correlation (ICC). CGS was moderately correlated with VO2-peak (r = 0.52, p < 0.0001) and weakly correlated with OUES (r = 0.41, p = 0.002) and VO2-VT (r = 0.37, p = 0.01). LEFM was weakly correlated with VO2-peak (r = 0.26, p = 0.055) and very weakly correlated with OUES (r = 0.19, p = 0.17) and VO2-VT (r = 0.14, p = 0.31). Compared to VO2-peak, VO2-VT was significantly less correlated with CGS (r difference = -0.16, p = 0.02). Inter-rater reliability of VO2-VT determination was high (ICC: 0.93, 95% CI: 0.89-0.96). Motor dysfunction appears to artificially lower measured aerobic capacity. VO2-VT seemed to be less distorted than VO2-peak and had good inter-rater reliability, so it may provide more specific assessment of aerobic capacity post-stroke.

Organic Field Effect Transistor Using Amorphous Fluoropolymer as Gate Insulating Film

NASA Astrophysics Data System (ADS)

Kitajima, Yosuke; Kojima, Kenzo; Mizutani, Teruyoshi; Ochiai, Shizuyasu

Organic field effect transistors are fabricated by the active layer of Regioregular poly (3-hexylthiophene-2,5-diy)(P3HT) thin film. CYTOP thin film made from Amorphous Fluoropolymer and fabricated by spin-coating is adopted to a gate dielectric layer on Polyethylenenaphthalate (PEN) thin film that is the substrate of an organic field effect transistor. The surface morphology and molecular orientation of P3HT thin films is observed by atomic force microscope (AFM) and X-Ray diffractometer (XRD). Grains are observed on the CYTOP thin film via an AFM image and the P3HT molecule is oriented perpendicularly on the CYTOP thin film. Based on the performance of the organic field effect transistor, the carrier mobility is 0.092 cm2/Vs, the ON/OFF ratio is 7, and the threshold voltage is -12 V. The ON/OFF ratio is relatively low and to improve On/Off ratio, the CYTOP/Polyimide double gate insulating layer is adopted to OFET.

Enhanced energy storage and pyroelectric properties of highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 thin films derived at low temperature

NASA Astrophysics Data System (ADS)

Zhu, Hanfei; Ma, Hongfang; Zhao, Yuyao

2018-05-01

Highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.15, y = 0.05; x = 0.1, y = 0.1; x = 0.05, y = 0.15) thin films were deposited on Pt/Ti/SiO2/Si substrates at a low temperature of 450 °C via a sol-gel route. It was found that all the (Pb1-x-yLaxCay)Ti1-x/4O3 thin films could be completely crystallized and the content of La/Ca showed a significant effect on the electrical properties of films. Among the three films, the (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.1, y = 0.1) thin film exhibited the enhanced overall electrical properties, such as a low dielectric loss (tan ⁡ δ < 0.08) and leakage current (J ∼ 4.6 ×10-5 A/cm2), a high recoverable energy density (Wre ∼ 15 J/cm3), as well as a large pyroelectric coefficient (p ∼ 190 μC/m2K) and figure of merit (Fd‧∼ 77 μC /m2K). The findings suggest that the fabricated thin films with a good (100) orientation can be an attractive candidate for applications in Si-based energy storage and pyroelectric devices.

Significance of the velocity at VO2max and time to exhaustion at this velocity.

PubMed

Billat, L V; Koralsztein, J P

1996-08-01

In 1923, Hill and Lupton pointed out that for Hill himself, 'the rate of oxygen intake due to exercise increases as speed increases, reaching a maximum for the speeds beyond about 256 m/min. At this particular speed, for which no further increases in O2 intake can occur, the heart, lungs, circulation, and the diffusion of oxygen to the active muscle-fibres have attained their maximum activity. At higher speeds the requirement of the body for oxygen is far higher but cannot be satisfied, and the oxygen debt continuously increases'. In 1975, this minimal velocity which elicits maximal oxygen uptake (VO2max) was called 'critical speed' and was used to measure the maximal aerobic capacity (max Eox), i.e. the total oxygen consumed at VO2max. This should not be confused with the term 'critical power' which is closes to the power output at the 'lactate threshold'. In 1984, the term 'velocity at VO2max' and the abbreviation 'vVO2max' was introduced. It was reported that vVO2max is a useful variable that combines VO2max and economy into a single factor which can identify aerobic differences between various runners or categories of runners. vVO2max explained individual differences in performance that VO2max or running economy alone did not. Following that, the concept of a maximal aerobic running velocity (Vamax in m/sec) was formulated. This was a running velocity at which VO2max occurred and was calculated as the ratio between VO2max (ml/kg/min) minus oxygen consumption at rest, and the energy cost of running (ml/kg/sec). There are many ways to determine the velocity associated with VO2max making it difficult to compare maintenance times. In fact, the time to exhaustion (tlim) at vVO2max is reproducible in an individual, however, there is a great variability among individuals with a low coefficient of variation for vVO2max. For an average value of about 6 minutes, the coefficient of variation is about 25%. It seems that the lactate threshold which is correlated with the tlim at vVO2max can explain this difference among individuals, the role of the anaerobic contribution being significant. An inverse relationship has been found between tlim at vVO2max and VO2max, and a positive one between vVO2max and the velocity at the lactate threshold expressed as a fraction of vVO2max. These results are similar for different sports (e.g. running, cycling, kayaking, swimming). It seems that the real time spent at VO2max is significantly different from an exhaustive run at a velocity close to vVO2max (105% vVO2max). However, the minimal velocity which elicits VO2max, and the tlim at this velocity appear to convey valuable information when analysing a runner's performance over 1500m to a marathon.

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Validation of cardiac output using real-time measurement of oxygen consumption during cardiac catheterization in children under 3 years of age.

PubMed

Seckeler, Michael D; Hirsch, Russel; Beekman, Robert H; Goldstein, Bryan H

2014-01-01

To validate a method for determination of cardiac index (CI) using real-time measurement of oxygen consumption (VO2 ) in young children undergoing cardiac catheterization. Retrospective review comparing thermodilution cardiac index (TDCI) to CI calculated by the Fick equation using real-time measured VO2 (RT-VO2 ) and VO2 derived from 2 published predictive equations. Paired t-test and Bland-Altman analysis were used to compare TDCI to Fick CI. A survey to ascertain pediatric cardiac catheterization practices regarding VO2 determination was also conducted. Quaternary care children's hospital cardiac catheterization laboratory. Children <3 years old with structurally normal hearts undergoing cardiac catheterization under general anesthesia with at least one set of contemporaneous TDCI and RT-VO2 measurements. Thirty-six paired measurements of TDCI and RT-VO2 were made in 27 patients over a 2-year period. Indications for catheterization included congenital diaphragmatic hernia postrepair (n = 13), heart disease post-orthotopic heart transplant (n = 13), and suspected cardiomyopathy (n = 1). Mean age was 21.5 ± 8 months; median weight was 9.9 kg (IQR 8.57, 12.2). RT-VO2 was higher than VO2 predicted by the LaFarge equation (190 ± 31 vs. 173.8 ± 12.8 mL/min/m(2), P < .001), but there was no difference between TDCI and Fick CI calculated using VO2 from any method. Bland-Altman analysis showed excellent agreement between TDCI and Fick CI using RT-VO2 and VO2 predicted by the Lundell equation; Fick CI using VO2 predicted by the LaFarge equation showed fair agreement with TDCI. In children <3 years with a structurally normal heart, RT-VO2 generates highly accurate determinations of Fick CI as compared with TDCI. Additionally, in this population, VO2 derived from the LaFarge and Lundell equations generates accurate Fick CI compared with TDCI. Future studies are needed to identify factors associated with inaccurate VO2 generated from these predictive equations. © 2013 Wiley Periodicals, Inc.

Highly infrared sensitive VO2 nanowires for a nano-optical device.

PubMed

Bhuyan, Prabal Dev; Gupta, Sanjeev K; Kumar, Ashok; Sonvane, Yogesh; Gajjar, P N

2018-04-25

Recent studies on the electronic, magnetic and optical properties of VO2 (vanadium dioxide) materials have motivated the exploration of one dimensional VO2 nanowires. First principles calculations were performed to investigate the structural, electronic, magnetic and optical properties of the monoclinic (M) and rutile (R) phases of VO2 nanowires. The monoclinic phase shows semiconducting behaviour with a band gap of 1.17 eV, whereas the rutile phase of VO2 nanowires behaves as a spin gapless semiconducting material, as band lines cross the Fermi level due only to up spin contribution. The monoclinic structure of VO2 nanowires is found to be paramagnetic and the rutile structure shows ferromagnetic half metal behavior. The conductivity calculation for VO2 nanowires shows the metal-insulator transition (MIT) temperature to be 250 K. The possible mechanism of VO2 nanowires to be used as smart windows has been discussed, as the nanowires are highly sensitive in the infrared (IR) region. Interestingly, at low temperature, the VO2 monoclinic structure allows infrared light to be transmitted, while VO2 with the rutile phase blocks light in the IR region. Furthermore, we adsorbed CO2, N2 and SO2 gas molecules on 1D VO2 monoclinic nanowire to investigate their interaction behaviour. It was observed that the absorption and transmission properties of VO2 dramatically change upon the adsorption of CO2 and SO2 gas molecules, which is likely to open up its application as an optical gas sensor.

Tuning polymorphism and orientation in organic semiconductor thin films via post-deposition processing.

PubMed

Hiszpanski, Anna M; Baur, Robin M; Kim, Bumjung; Tremblay, Noah J; Nuckolls, Colin; Woll, Arthur R; Loo, Yueh-Lin

2014-11-05

Though both the crystal structure and molecular orientation of organic semiconductors are known to impact charge transport in thin-film devices, separately accessing different polymorphs and varying the out-of-plane molecular orientation is challenging, typically requiring stringent control over film deposition conditions, film thickness, and substrate chemistry. Here we demonstrate independent tuning of the crystalline polymorph and molecular orientation in thin films of contorted hexabenzocoronene, c-HBC, during post-deposition processing without the need to adjust deposition conditions. Three polymorphs are observed, two of which have not been previously reported. Using our ability to independently tune the crystal structure and out-of-plane molecular orientation in thin films of c-HBC, we have decoupled and evaluated the effects that molecular packing and orientation have on device performance in thin-film transistors (TFTs). In the case of TFTs comprising c-HBC, polymorphism and molecular orientation are equally important; independently changing either one affects the field-effect mobility by an order of magnitude.

57Fe CEMS study on dilute metal ions codoped SnO2 thin films prepared by spray pyrolysis

NASA Astrophysics Data System (ADS)

Nomura, Kiyoshi; Koike, Yuya; Nakanishi, Akio

2017-11-01

Dilute Mn-Fe, Co-Fe and V-Fe codoped tin oxide films prepared by spray pyrolysis were characterized by 57Fe conversion electron Mössbauer spectrometry (CEMS) at room temperature (RT) and at 20 K. Two kinds of paramagnetic Fe3+ species were detected at RT; one doublet 1 (D1) with IS = 0.36-0.37 mm/s, QS = 0.69-0.75 mm/s and LW = 0.32-0.40 mm/s, and another doublet 2 (D2) with IS = 0.31-0.35 mm/s QS = 1.16-1.25 mm/s and LW = 0.46-0.52 mm/s. CEMS at 20 K provided more distinguished doublets than at RT. It is found that especially D2 with relatively small IS and large QS values are influenced by other metal ions codoped in SnO2 matrix, whereas D1 with relatively large IS and small QS has the parameters close to the models of Fe-VO1 and Fe-2VO1-Fe models (Nomura et al. Phys. Rev. B 75, 184411 2007; Mudarra Navarro et al. J. Phys. Chem. C 119, 5596-5603 2015).

Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases.

PubMed

Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Zeng, Xierong; Huang, Haitao

2015-06-24

A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm(3) along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range.

Thick crystalline films on foreign substrates

DOEpatents

Smith, H.I.; Atwater, H.A.; Geis, M.W.

1986-03-18

To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 [mu]m) film on a foreign substrate, the film is formed so as to be thin (<1 [mu]m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns. 2 figs.

Vanadium oxide thin films produced by magnetron sputtering from a V2O5 target at room temperature

NASA Astrophysics Data System (ADS)

de Castro, Marcelo S. B.; Ferreira, Carlos L.; de Avillez, Roberto R.

2013-09-01

Vanadium oxide thin films were grown by RF magnetron sputtering from a V2O5 target at room temperature, an alternative route of production of vanadium oxide thin films for infrared detector applications. The films were deposited on glass substrates, in an argon-oxygen atmosphere with an oxygen partial pressure from nominal 0% to 20% of the total pressure. X-ray diffraction (XRD) and X-ray photon spectroscopy (XPS) analyses showed that the films were a mixture of several vanadium oxides (V2O5, VO2, V5O9 and V2O3), which resulted in different colors, from yellow to black, depending on composition. The electrical resistivity varied from 1 mΩ cm to more than 500 Ω cm and the thermal coefficient of resistance (TCR), varied from -0.02 to -2.51% K-1. Computational thermodynamics was used to simulate the phase diagram of the vanadium-oxygen system. Even if plasma processes are far from equilibrium, this diagram provides the range of oxygen pressures that lead to the growth of different vanadium oxide phases. These conditions were used in the present work.

Pulmonary and leg VO2 during submaximal exercise: implications for muscular efficiency

NASA Technical Reports Server (NTRS)

Poole, D. C.; Gaesser, G. A.; Hogan, M. C.; Knight, D. R.; Wagner, P. D.

1992-01-01

Insights into muscle energetics during exercise (e.g., muscular efficiency) are often inferred from measurements of pulmonary gas exchange. This procedure presupposes that changes of pulmonary O2 (VO2) associated with increases of external work reflect accurately the increased muscle VO2. The present investigation addressed this issue directly by making simultaneous determinations of pulmonary and leg VO2 over a range of work rates calculated to elicit 20-90% of maximum VO2 on the basis of prior incremental (25 or 30 W/min) cycle ergometry. VO2 for both legs was calculated as the product of twice one-leg blood flow (constant-infusion thermodilution) and arteriovenous O2 content difference across the leg. Measurements were made 3-5 min after each work rate imposition to avoid incorporation of the VO2 slow component above the lactate threshold. For all 17 subjects, the slope of pulmonary VO2 (9.9 +/- 0.2 ml O2.W-1.min-1) was not different (P greater than 0.05) from that for leg VO2 (9.2 +/- 0.6 ml O2.W-1.min-1). Estimation of "delta" efficiency (i.e., delta work accomplished divided by delta energy expended, calculated from slope of VO2 vs. work rate and a caloric equivalent for O2 of 4.985 cal/ml) using pulmonary VO2 measurements (29.1 +/- 0.6%) was likewise not significantly different (P greater than 0.05) from that made using leg VO2 measurements (33.7 +/- 2.4%). These data suggest that the net VO2 cost of metabolic "support" processes outside the exercising legs changes little over a relatively broad range of exercise intensities. Thus, under the conditions of this investigation, changes of VO2 measured from expired gas reflected closely those occurring within the exercising legs.

Piezoresistivity of mechanically drawn single-walled carbon nanotube (SWCNT) thin films-: mechanism and optimizing principle

NASA Astrophysics Data System (ADS)

Obitayo, Waris

The individual carbon nanotube (CNT) based strain sensors have been found to have excellent piezoresistive properties with a reported gauge factor (GF) of up to 3000. This GF on the other hand, has been shown to be structurally dependent on the nanotubes. In contrast, to individual CNT based strain sensors, the ensemble CNT based strain sensors have very low GFs e.g. for a single walled carbon nanotube (SWCNT) thin film strain sensor, GF is ~1. As a result, studies which are mostly numerical/analytical have revealed the dependence of piezoresistivity on key parameters like concentration, orientation, length and diameter, aspect ratio, energy barrier height and Poisson ratio of polymer matrix. The fundamental understanding of the piezoresistive mechanism in an ensemble CNT based strain sensor still remains unclear, largely due to discrepancies in the outcomes of these numerical studies. Besides, there have been little or no experimental confirmation of these studies. The goal of my PhD is to study the mechanism and the optimizing principle of a SWCNT thin film strain sensor and provide experimental validation of the numerical/analytical investigations. The dependence of the piezoresistivity on key parameters like orientation, network density, bundle diameter (effective tunneling area), and length is studied, and how one can effectively optimize the piezoresistive behavior of a SWCNT thin film strain sensors. To reach this goal, my first research accomplishment involves the study of orientation of SWCNTs and its effect on the piezoresistivity of mechanically drawn SWCNT thin film based piezoresistive sensors. Using polarized Raman spectroscopy analysis and coupled electrical-mechanical test, a quantitative relationship between the strain sensitivity and SWCNT alignment order parameter was established. As compared to randomly oriented SWCNT thin films, the one with draw ratio of 3.2 exhibited ~6x increase on the GF. My second accomplishment involves studying the influence of the network density on the piezoresistivity of mechanically drawn SWCNT thin films. Mechanically drawn SWCNT thin films with different layer (or thickness) e.g. 1-layer, 3-layer, 10-layer and 20-layer SWCNT thin films were prepared to understand the variation of SWCNT network density as well as the alignment of SWCNTs on the strain sensitivity. The less entangled SWCNT bundles observed in the sparse network density (1- layer and 3-layer SWCNT thin films) allows for easy alignment and the best gauge factors. As compared to the randomly oriented SWCNT thin films, the one with draw ratio of 3.2 exhibited ~8x increase on the GF for the 1-layer SWCNT thin films while the 20-layer SWCNT thin films exhibited ~3x increase in the GF. My third accomplishment examines the effect of SWCNT bundles with different diameters on the piezoresistive behavior of mechanically drawn SWCNT thin films. SWCNT thin film network of sparse morphology (1-layer) with different bundle sizes were prepared by varying the sonication duration e.g. S0.5hr, S4hr, S10hr and S20hr and using spraying coating. The GF increased by a factor of ~10 when the randomly oriented SWCNT thin film was stretched to a draw ratio of 3.2 for the S0.5hr SWCNT thin films and by a factor of ~2 for the S20hr SWCNT thin films. Three main mechanisms were attributed to this behavior e.g. effect of concentration of exfoliated nanotubes, bundle reduction due to mechanical stretching, and influence of bundle length on the alignment of SWCNTs. Furthermore, information about the average length and length distribution is very essential when investigating the influence of individual nanotube length on the strain sensitivity. With that in mind, we would use our previously developed preparative ultracentrifuge method (PUM), and our newly developed gel electrophoresis and simultaneous Raman and photoluminescence spectroscopy (GEP-SRSPL) to characterize the average length and length distribution of individual SWCNTs respectively.

VO2 attained during treadmill running: the influence of a specialist (400-m or 800-m) event.

PubMed

James, David V B; Sandals, Leigh E; Draper, Stephen B; Maldonado-Martin, Sara; Wood, Dan M

2007-06-01

Previously it has been observed that, in well-trained 800-m athletes, VO2max is not attained during middle-distance running events on a treadmill, even when a race-type pacing strategy is adopted. Therefore, the authors investigated whether specialization in a particular running distance (400-m or 800-m) influences the VO2 attained during running on a treadmill. Six 400-m and six 800-m running specialists participated in the study.A 400-m trial and a progressive test to determine VO2max were completed in a counterbalanced order. Oxygen uptakes attained during the 400-m trial were compared to examine the influence of specialist event. A VO2 plateau was observed in all participants for the progressive test, demonstrating the attainment of VO2max. The VO2max values were 56.2 +/- 4.7 and 69.3 +/- 4.5 mL x kg-1 x min-1 for the 400-m- and 800-m-event specialists, respectively (P = .0003). Durations for the 400-m trial were 55.1 +/- 4.2 s and 55.8 +/- 2.3 s for the 400-m- and 800-m-event specialists, respectively. The VO2 responses achieved were 93.1% +/- 2.0% and 85.7% +/- 3.0% VO2max for the 400-m- and 800-m-event specialists, respectively (P = .001). These results demonstrate that specialist running events do appear to influence the percentage of VO2max achieved in the 400-m trial, with the 800-m specialists attaining a lower percentage of VO2max than the 400-m specialists. The 400-m specialists appear to compensate for a lower VO2max by attaining a higher percentage VO2max during a 400-m trial.

Applied physiology of marathon running.

PubMed

Sjödin, B; Svedenhag, J

1985-01-01

Performance in marathon running is influenced by a variety of factors, most of which are of a physiological nature. Accordingly, the marathon runner must rely to a large extent on a high aerobic capacity. But great variations in maximal oxygen uptake (VO2 max) have been observed among runners with a similar performance capacity, indicating complementary factors are of importance for performance. The oxygen cost of running or the running economy (expressed, e.g. as VO2 15 at 15 km/h) as well as the fractional utilisation of VO2 max at marathon race pace (%VO2 Ma X VO2 max-1) [where Ma = mean marathon velocity] are additional factors which are known to affect the performance capacity. Together VO2 max, VO2 15 and %VO2 Ma X VO2 max-1 can almost entirely explain the variation in marathon performance. To a similar degree, these variables have also been found to explain the variations in the 'anaerobic threshold'. This factor, which is closely related to the metabolic response to increasing exercise intensities, is the single variable that has the highest predictive power for marathon performance. But a major limiting factor to marathon performance is probably the choice of fuels for the exercising muscles, which factor is related to the %VO2 Ma X VO2 max-1. Present indications are that marathon runners, compared with normal individuals, have a higher turnover rate in fat metabolism at given high exercise intensities expressed both in absolute (m/sec) and relative (%VO2 max) terms. The selection of fat for oxidation by the muscles is important since the stores of the most efficient fuel, the carbohydrates, are limited. The large amount of endurance training done by marathon runners is probably responsible for similar metabolic adaptations, which contribute to a delayed onset of fatigue and raise the VO2 Ma X VO2max-1. There is probably an upper limit in training kilometrage above which there are no improvements in the fractional utilisation of VO2 max at the marathon race pace. The influence of training on VO2 max and, to some extent, on the running economy appears, however, to be limited by genetic factors.

Metamaterials based on the phase transition of VO2

NASA Astrophysics Data System (ADS)

Liu, Hongwei; Lu, Junpeng; Renshaw Wang, Xiao

2018-01-01

In this article, we present a comprehensive review on recent research progress in design and fabrication of active tunable metamaterials and devices based on phase transition of VO2. Firstly, we introduce mechanisms of the metal-to-insulator phase transition (MIPT) in VO2 investigated by ultrafast THz spectroscopies. By analyzing the THz spectra, the evolutions of MIPT in VO2 induced by different external excitations are described. The superiorities of using VO2 as building blocks to construct highly tunable metamaterials are discussed. Subsequently, the recently demonstrated metamaterial devices based on VO2 are reviewed. These metamaterials devices are summarized and described in the categories of working frequency. In each working frequency range, representative metamaterials based on VO2 with different architectures and functionalities are reviewed and the contributions of the MIPT of VO2 are emphasized. Finally, we conclude the recent reports and provide a prospect on the strategies of developing future tunable metamaterials based on VO2.

Vanadium and cancer treatment: antitumoral mechanisms of three oxidovanadium(IV) complexes on a human osteosarcoma cell line.

PubMed

León, I E; Butenko, N; Di Virgilio, A L; Muglia, C I; Baran, E J; Cavaco, I; Etcheverry, S B

2014-05-01

We report herein the antitumor actions of three oxidovanadium(IV) complexes on MG-63 human osteosarcoma cell line. The three complexes: VO(oda), VO(oda)bipy and VO(oda)phen (oda=oxodiacetate), caused a concentration dependent inhibition of cell viability. The antiproliferative action of VO(oda)phen could be observed in the whole range of concentrations (at 2.5 μM), while VO(oda)bipy and VO(oda) showed a decrease of cell viability only at higher concentrations (at 50 and 75 μM, respectively) (p<0.01). Moreover, VO(oda)phen caused a decrease of lysosomal and mitochondrial activities at 2.5 μM, while VO(oda) and VO(oda)bipy affected neutral red uptake and mitochondrial metabolism at 50 μM (p<0.01). On the other hand, no DNA damage studied by the Comet assay could be observed in MG-63 cells treated with VO(oda) at 2.5-10 μM. Nevertheless, VO(oda)phen and VO(oda)bipy induced DNA damage at 2.5 and 10 μM, respectively (p<0.01). The generation of reactive oxygen species increased at 10 μM of VO(oda)phen and only at 100 μM of VO(oda) and VO(oda)bipy (p<0.01). Besides, VO(oda)phen and VO(oda)bipy triggered apoptosis as determined by externalization of the phosphatidylserine. The determination of DNA cleavage by agarose gel electrophoresis showed that the ability of VO(oda)(bipy) is similar to that of VO(oda), while VO(oda)(phen) showed the highest nuclease activity in this series. Overall, our results showed a good relationship between the bioactivity of the complexes and their structures since VO(oda)phen presented the most potent antitumor action in human osteosarcoma cells followed by VO(oda)bipy and then by VO(oda) according to the number of intercalating heterocyclic moieties. © 2013.

Effects of training on muscle O2 transport at VO2max

NASA Technical Reports Server (NTRS)

Roca, J.; Agusti, A. G.; Alonso, A.; Poole, D. C.; Viegas, C.; Barbera, J. A.; Rodriguez-Roisin, R.; Ferrer, A.; Wagner, P. D.

1992-01-01

To quantify the relative contributions of convective and peripheral diffusive components of O2 transport to the increase in leg O2 uptake (VO2leg) at maximum O2 uptake (VO2max) after 9 wk of endurance training, 12 sedentary subjects (age 21.8 +/- 3.4 yr, VO2max 36.9 +/- 5.9 ml.min-1.kg-1) were studied. VO2max, leg blood flow (Qleg), and arterial and femoral venous PO2, and thus VO2leg, were measured while the subjects breathed room air, 15% O2, and 12% O2. The sequence of the three inspirates was balanced. After training, VO2max and VO2leg increased at each inspired O2 concentration [FIO2; mean over the 3 FIO2 values 25.2 +/- 17.8 and 36.5 +/- 33% (SD), respectively]. Before training, VO2leg and mean capillary PO2 were linearly related through the origin during hypoxia but not during room air breathing, suggesting that, at 21% O2, VO2max was not limited by O2 supply. After training, VO2leg and mean capillary PO2 at each FIO2 fell along a straight line with zero intercept, just as in athletes (Roca et al. J. Appl. Physiol. 67: 291-299, 1989). Calculated muscle O2 diffusing capacity (DO2) rose 34% while Qleg increased 19%. The relatively greater rise in DO2 increased the DO2/Qleg, which led to 9.9% greater O2 extraction. By numerical analysis, the increase in Qleg alone (constant DO2) would have raised VO2leg by 35 ml/min (mean), but that of DO2 (constant Qleg) would have increased VO2leg by 85 ml/min, more than twice as much. The sum of these individual effects (120 ml/min) was less (P = 0.013) than the observed rise of 164 ml/min (mean). This synergism (explained by the increase in DO2/Qleg) seems to be an important contribution to increases in VO2max with training.

Polyethyleneimine High-Energy Hydrophilic Surface Interfacial Treatment toward Efficient and Stable Perovskite Solar Cells.

PubMed

Li, Pengwei; Liang, Chao; Zhang, Yiqiang; Li, Fengyu; Song, Yanlin; Shao, Guosheng

2016-11-30

The interfacial contact is critical for the performance of perovskite solar cells (PSCs), leading to dense perovskite thin films and efficient charge transport. In this contribution, an effective interfacial treatment solution using polyethyleneimine (PEI) was developed to improve the performance and stability of PSCs. Inserting PEI between the s-VO x and perovskite layers can produce a high-energy hydrophilic surface to facilitate the formation of a high-quality perovskite layer by the solution method. Accordingly, the surface coverage of perovskite film on the s-VO x layer increased from 80% to 95%, and the PCE of the device improved from 12.06% (with an average of 10.16%) to 14.4% (with an average value of 12.8%) under an irradiance of 100 mW cm -2 AM 1.5G sunlight. More importantly, the stability of PSCs was further improved after adding another PEI layer between the electron transport layer and LiF/Al layer, less than 10% decay in efficiency during a 10-days observation. Since all layers of the PSCs were fabricated at low temperature (<150 °C), these PEI-treated PSCs based on the amorphous VO x layer have the potential to contribute significantly toward the development of efficient and stable solar cells on flexible substrates.

Multiple variables explain the variability in the decrement in VO2max during acute hypobaric hypoxia.

PubMed

Robergs, R A; Quintana, R; Parker, D L; Frankel, C C

1998-06-01

We used multiple regression analyses to determine the relationships between the decrement in sea level (SL, 760 Torr) VO2max during hypobaric hypoxia (HH) and variables that could alter or be related to the decrement in VO2max. HH conditions consisted of 682 Torr, 632 Torr, and 566 Torr, and the measured independent variables were SL-VO2max, SL lactate threshold (SL-LT), the change in hemoglobin saturation at VO2max between 760 and 566 Torr (delta SaO2max), lean body mass (LBM), and gender. Male (N = 14) and female (N = 14) subjects of varied fitness, training status, and residential altitude (1,640-2,460 m) completed cycle ergometry tests of VO2max at each HH condition under randomized and single-blinded conditions. VO2max decreased significantly from 760 Torr after 682 Torr (approximately 915 m) (3.5 +/- 0.9 to 3.4 +/- 0.8 L.min-1, P = 0.0003). Across all HH conditions, the slope of the relative decrement in VO2max (%VO2max) during HH was -9.2%/100 mm Hg (-8.1%/1000 m) with an initial decrease from 100% estimated to occur below 705 Torr (610 m). Step-wise multiple regression revealed that SL-VO2max, SL-LT, delta SaO2max, LBM, and gender each significantly combined to account for 89.03% of the variance in the decrement in VO2max (760-566 Torr) (P < 0.001). Individuals who have a combination of a large SL-VO2max, a small SL-LT (VO2, L.min-1), greater reductions in delta SaO2max, a large LBM, and are male have the greatest decrement in VO2max during HH. The unique variance explanation afforded by SL-LT, LBM, and gender suggests that issues pertaining to oxygen diffusion within skeletal muscle may add to the explanation of between subjects variability in the decrement in VO2max during HH.

High-intensity Interval Training in Different Exercise Modes: Lessons from Time to Exhaustion.

PubMed

Sousa, Ana Catarina; Fernandes, Ricardo J; Boas, Joao Paulo Vilas; Figueiredo, Pedro

2018-06-20

To provide information for high-intensity interval training (HIIT) load, we compared the temporal variables of VO 2 response at, and after, a time sustained at the exercise intensity corresponding to VO 2max (Tlim) in different exercise modes. Forty-five trained male swimmers (11), rowers (13), runners (10) and cyclists (11) completed an incremental protocol to determine the velocity (vVO 2max ) or power (wVO 2max ) at VO 2max and a square wave exercise from rest to 100% of vVO 2max /wVO 2max . The temporal variables of VO 2 response were examined using a breath-by-breath gas analyzer. VO 2 responses were not different between exercise modes, except for the percentage of VO 2max at 50% of Tlim, which was ~6% higher in rowing compared to cycling (97.70±2.90 vs 92.40±5.69%, p =0.013). During the recovery period, both swimmers and rowers evidenced higher percentages of VO 2max compared to cyclists at 30 s (65.1±10.4 and 65.7±5.6 vs 52.7±5.6%) and 60 s (41.7±10.8 and 38.4±5.4 vs 30.4±1.8%) time periods, all for p< 0.01. Furthermore, swimmers presented higher time values to reach 50% VO 2max compared to runners and cyclists (51.1±15.6 vs 38.1±6.7 and 33.8±4.7%; p <0.001). When training at 100% of VO 2max intensity, fixed intervals for HIIT could be set freely. However, recovery periods based on time or intensity are exercise-mode dependent. © Georg Thieme Verlag KG Stuttgart · New York.

Orientational behavior of thin films of poly(3-methylthiophene) on platinium: A FTIR and near edge x-ray absorption fine structure (NEXAFS) study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, X.Q.; Chen, J.; Hale, P.D.

1988-01-01

Near edge x-ray absorption fine structure (NEXAFS) and infrared reflection-absorption spectroscopy (IRRAS) have been used to study the orientational behavior of thin films of poly(3-methylthiophene) electrochemically polymerized on a platinum surface. Clear orientational effects, with the thiophene rings predominantly oriented parallel to the platinum surface, were observed when the thickness of the polymer films were within a few hundred /angstrom/A. It was found that more highly ordered films were produced at lower polymerization potential (1.4V vs SCE) than at higher potential (1.8V vs SCE). 5 refs., 4 figs., 2 tabs.

Improving the electrocatalytic performance of carbon nanotubes for VO2+/VO2+ redox reaction by KOH activation

NASA Astrophysics Data System (ADS)

Dai, Lei; Jiang, Yingqiao; Meng, Wei; Zhou, Huizhu; Wang, Ling; He, Zhangxing

2017-04-01

In this paper, carbon nanotubes (CNTs) was activated by KOH treatment at high temperature and investigated as catalyst for VO2+/VO2+ redox reaction for vanadium redox flow battery (VRFB). X-ray photoelectron spectroscopy results suggest that the oxygen-containing groups can be introduced on CNTs by KOH activation. The mass transfer of vanadium ions can be accelerated by chemical etching by KOH activation and improved wettability due to the introduction of hydrophilic groups. The electrochemical properties of VO2+/VO2+ redox reaction can be enhanced by introduced oxygen-containing groups as active sites. The sample treated at 900 °C with KOH/CNTs mass ratio of 3:1 (CNTs-3) exhibits the highest electrocatalytic activity for VO2+/VO2+ redox reaction. The cell using CNTs-3 as positive catalyst demonstrates the smallest electrochemical polarization, the highest capacity and efficiency among the samples. Using KOH-activated CNTs-3 can increase the average energy efficiency of the cell by 4.4%. This work suggests that KOH-activated CNTs is a low-cost, efficient and promising catalyst for VO2+/VO2+ redox reaction for VRFB system.

Electrochemical Synthesis of Amorphous VO2 Colloids and Their Rapid Thermal Transforming to VO2 (M) Nanoparticles with Good Thermochromic Performance.

PubMed

Wu, Hao; Li, Ming; Zhong, Li; Luo, Yuan Yuan; Li, Guang Hai

2016-12-05

Amorphous VO 2 (a-VO 2 ) colloids were synthesized by electrochemical anodic oxidation of metallic vanadium. It was found that the a-VO 2 colloids have a cotton-like morphology composed of very small clusters, and that the crystallization temperature of the a-VO 2 colloids can be adjusted either by the electrolyte of the anodic oxidation or/and the dispersion agent of the colloids. VO 2 (M) nanoparticles (NPs) (and a NP film) with an average size of about 50 nm can be obtained by a rapid thermal annealing of the a-VO 2 colloids at 310 °C under air, which is beneficial for practical applications. The VO 2 (M) NP film shows an obvious metal-semiconductor transition with a resistance less than 10 Ω in the metallic state. An integral visible transmittance of 40.7 %, a solar transmittance modulation of 9.4 %, and a resistance modulation in the order of 5×10 4 were realized in the VO 2 (M) NP film. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Normalization for peak oxygen uptake increases the prognostic power of the ventilatory response to exercise in patients with chronic heart failure.

PubMed

Guazzi, Marco; De Vita, Stefano; Cardano, Paola; Barlera, Simona; Guazzi, Maurizio D

2003-09-01

Peak exercise oxygen uptake (peak VO2) and ventilation to CO2 production (VE/VCO2) slope are established prognostic indicators in patients with chronic heart failure (CHF). A high VE/VCO2 slope, however, does not take into account the level of physical performance as expressed by peak VO2. We hypothesized that the prognostic value of a high VE/VCO2 slope may be improved by normalization for peak VO2 (VE/VCO2/VO2). One hundred patients with CHF underwent pulmonary function tests at rest (spirometry and lung diffusion capacity) and maximal cardiopulmonary exercise testing. The prognostic value of VE/VCO2 slope, peak VO2 and VE/VCO2/VO2 was probed prospectively. Twenty-one patients died from cardiac reasons during a mean follow-up of 26 +/- 19 months. Nonsurvivors, compared to survivors, showed a lower peak VO2 (13.6 +/- 4.0 vs 17.5 +/- 4.1 mL x min(-1) x kg(-1), P <.01) and a steeper VE/VCO2 slope (43 +/- 11 vs 31.6 +/- 5.0, P <.01). Nonetheless, in patients whose VE/VCO2 slope exceeded 34 (upper normal limit), there was no correlation with peak VO2 (r = -35, P = not significant). Interestingly 35% of them showed a normal exercise performance (peak VO2 > or =18 mL x min(-1) x kg(-1)). At multivariate analysis, the VE/VCO2 slope showed a prognostic power stronger than that of peak VO2; however, the VE/VCO2/VO2 index retained a prognostic power greater than that of both VE/VCO2 slope and peak VO2. A VE/VCO2/VO2 > or =2.4 signaled cases at higher risk. Discrepancies between VE/VCO2 slope and peak VO2 may generate uncertainty. Normalization of the former by the latter improves outcome prediction and may be considered a simple and effective way for maximizing the clinical applicability of these 2 indicators.

Li2.97Mg0.03VO4: High rate capability and cyclability performances anode material for rechargeable Li-ion batteries

NASA Astrophysics Data System (ADS)

Dong, Youzhong; Zhao, Yanming; Duan, He; Singh, Preetam; Kuang, Quan; Peng, Hongjian

2016-07-01

Mg-doped composite, Li2.97Mg0.03VO4, with an orthorhombic structure was prepared by a sol-gel method. The effects of the Mg doping on the structure and electrochemical performance of Li3VO4 were investigated. The X-ray diffraction pattern shows that the Mg doping does not change the crystal structure of Li3VO4. The EDS mappings indicated the fairly uniform distribution of Mg throughout the grains of Li2.97Mg0.03VO4. Electronic conductivity of Mg-doped Li3VO4 increased by two orders of magnitude compared to that of pure Li3VO4. CV and EIS measurement confirms that the Li2.97Mg0.03VO4 sample exhibits a smaller polarization and transfer resistance and a higher lithium diffusion coefficient compared with the pure Li3VO4. Due to the better electrochemical kinetics properties, Mg-doped Li3VO4 showed a significant improved performance compared to the pure Li3VO4, especially for the high rate capability. At the higher discharge/charge rate (2C), the discharge and charge capacities of 415.5 and 406.1 mAh/g have been obtained for the Li2.97Mg0.03VO4 which is more than three times higher the discharge/charge capacities of Li3VO4. The discharge and charge capacities of pure Li3VO4 are only 126.4 and 125.8 mAh/g respectively. The excellent electrochemical performance of Li2.97Mg0.03VO4 enables it as a promising anode material for rechargeable lithium-ion batteries.

Reactions of vanadium dioxide molecules with acetylene: infrared spectra of VO2(η(2)-C2H2)(x) (x = 1, 2) and OV(OH)CCH in solid neon.

PubMed

Zhou, Xiaojie; Chen, Mohua; Zhou, Mingfei

2013-07-03

Reactions of vanadium dioxide molecules with acetylene have been studied by matrix isolation infrared spectroscopy. Reaction intermediates and products are identified on the basis of isotopic substitutions as well as density functional frequency calculations. Ground state vanadium dioxide molecule reacts with acetylene in forming the side-on-bonded VO2(η(2)-C2H2) and VO2(η(2)-C2H2)2 complexes spontaneously on annealing in solid neon. The VO2(η(2)-C2H2) complex is characterized to have a (2)B2 ground state with C2v symmetry, whereas the VO2(η(2)-C2H2)2 complex has a (2)A ground state with C2 symmetry. The VO2(η(2)-C2H2) and VO2(η(2)-C2H2)2 complexes are photosensitive. The VO2(η(2)-C2H2) complex rearranges to the OV(OH)CCH molecule upon UV-vis light excitation.

F-doped VO2 nanoparticles for thermochromic energy-saving foils with modified color and enhanced solar-heat shielding ability.

PubMed

Dai, Lei; Chen, Shi; Liu, Jianjun; Gao, Yanfeng; Zhou, Jiadong; Chen, Zhang; Cao, Chuanxiang; Luo, Hongjie; Kanehira, Minoru

2013-07-28

F-doped VO2 (M1) nanoparticles were prepared via one-pot hydrothermal synthesis. The F-doping can minimise the size of the VO2 (M1) nanoparticles, induce a homogeneous size distribution and effectively decrease the phase transition temperature to 35 °C at 2.93% F in VO2. VO2 smart glass foils obtained by casting these nanoparticles exhibit excellent thermochromism in the near-infrared region, which suggests that these foils can be used for energy-efficient glass. Compared to a pure VO2 foil, the 2.93% F-doped VO2 foil exhibits an increased solar-heat shielding ability (35.1%) and a modified comfortable colour, while still retaining an excellent solar modulation ability (10.7%) and an appropriate visible transmittance (48.7%). The F-doped VO2 foils are the first to simultaneously meet the requirements of a reduced phase transition temperature, diluted colour and excellent thermochromic properties, and these properties make the further improved F-doped VO2 foils suitable for commercial applications in energy efficient glass.

Improving the Accuracy of Predicting Maximal Oxygen Consumption (VO2pk)

NASA Technical Reports Server (NTRS)

Downs, Meghan E.; Lee, Stuart M. C.; Ploutz-Snyder, Lori; Feiveson, Alan

2016-01-01

Maximal oxygen (VO2pk) is the maximum amount of oxygen that the body can use during intense exercise and is used for benchmarking endurance exercise capacity. The most accurate method to determineVO2pk requires continuous measurements of ventilation and gas exchange during an exercise test to maximal effort, which necessitates expensive equipment, a trained staff, and time to set-up the equipment. For astronauts, accurate VO2pk measures are important to assess mission critical task performance capabilities and to prescribe exercise intensities to optimize performance. Currently, astronauts perform submaximal exercise tests during flight to predict VO2pk; however, while submaximal VO2pk prediction equations provide reliable estimates of mean VO2pk for populations, they can be unacceptably inaccurate for a given individual. The error in current predictions and logistical limitations of measuring VO2pk, particularly during spaceflight, highlights the need for improved estimation methods.

Ion beam modification of single crystalline BiVO4

NASA Astrophysics Data System (ADS)

Wendler, Elke; Bischoff, Marie; Schmidt, Emanuel; Schrempel, F.; Ellmer, Klaus; Kanis, Michael; van de Krol, Roel

2017-10-01

A single crystalline BiVO4 sample was investigated. Angular resolved Rutherford backscattering spectrometry (arRBS) was performed as a function of two orthogonal angles perpendicular to the surface. The crystal planes appearing in the angular charts are compared with the crystal structure of monoclinic BiVO4. By this comparison the crystal axis being almost normal to the surface was identified to be 〈0 0 1〉. These measurements support the control of orientation and quality of the grown BiVO4 crystal. Additionally it is found that during prolonged analysis the He ions produce a considerable amount of damage. As the nuclear energy loss of the He ions is negligibly low within the corresponding depth region, the damage is mainly caused by the electronic energy loss of the ions. For studying radiation resistance and damage formation, the BiVO4 single crystal was implanted with 200 keV Ar ions. The damage production in the Bi sublattice was analysed by RBS applying 1.8 MeV He ions in channelling configuration. The damage profiles determined from the channelling RBS spectra can be well represented by the electronic energy loss of the implanted Ar ions. From this it is concluded that, in agreement with the finding mentioned above, this energy mainly triggers damage formation in ion irradiated BiVO4. The energy for producing one displaced Bi atom as seen by RBS decreases with increasing damage concentration and varies between 33 and 3.4 eV.

Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps

DOE PAGES

Choe, Hwan Sung; Suh, Joonki; Ko, Changhyun; ...

2017-08-02

Efficient thermal management at the nanoscale is important for reducing energy consumption and dissipation in electronic devices, lab-on-a-chip platforms and energy harvest/conversion systems. For many of these applications, it is much desired to have a solid-state structure that reversibly switches thermal conduction with high ON/OFF ratios and at high speed. We describe design and implementation of a novel, all-solid-state thermal switching device by nanostructured phase transformation, i.e., modulation of contact pressure an d area between two poly-silicon surfaces activated by microstructural change of a vanadium dioxide (VO 2 ) thin film. Our solid-state devices demonstrate large and reversible alteration ofmore » cross-plane thermal conductance as a function of temperature, achieving a conductance ratio of at least 2.5. This new approach using nanostructured phase transformation provides new opportunities for applications that require advanced temperature and heat regulations.« less

Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choe, Hwan Sung; Suh, Joonki; Ko, Changhyun

Efficient thermal management at the nanoscale is important for reducing energy consumption and dissipation in electronic devices, lab-on-a-chip platforms and energy harvest/conversion systems. For many of these applications, it is much desired to have a solid-state structure that reversibly switches thermal conduction with high ON/OFF ratios and at high speed. We describe design and implementation of a novel, all-solid-state thermal switching device by nanostructured phase transformation, i.e., modulation of contact pressure an d area between two poly-silicon surfaces activated by microstructural change of a vanadium dioxide (VO 2 ) thin film. Our solid-state devices demonstrate large and reversible alteration ofmore » cross-plane thermal conductance as a function of temperature, achieving a conductance ratio of at least 2.5. This new approach using nanostructured phase transformation provides new opportunities for applications that require advanced temperature and heat regulations.« less

n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE

NASA Astrophysics Data System (ADS)

Wang, Minhuan; Bian, Jiming; Sun, Hongjun; Liu, Weifeng; Zhang, Yuzhi; Luo, Yingmin

2016-12-01

High quality VO2 films with precisely controlled thickness were grown on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). Results indicated that a distinct reversible semiconductor-to-metal (SMT) phase transition was observed for all the samples in the temperature dependent electrical resistance measurement, and the influence of VO2 layer thickness on the SMT properties of the as-grown n-VO2/p-GaN based nitride-oxide heterostructure was investigated. Meanwhile, the clear rectifying transport characteristics originated from the n-VO2/p-GaN interface were demonstrated before and after SMT of the VO2 over layer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. Moreover, the X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO2 films was principally composed of V4+ with trace amount of V5+. The design and modulation of the n-VO2/p-GaN based heterostructure devices will benefit significantly from these achievements.

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

NASA Astrophysics Data System (ADS)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

[Dynamics of oxygen uptake during a 100 m front crawl event, performed during competition ].

PubMed

Jalab, Chadi; Enea, Carina; Delpech, Nathalie; Bernard, Olivier

2011-04-01

The main purpose of this study is to estimate the dynamics of oxygen uptake (VO2) during a 100 m front crawl event, performed in competition conditions. Eleven trained swimmers participated in 2 separate sessions, in a 25 m swimming pool. Maximal oxygen uptake (VO2max) was determined during a 400 m maximal event. Swimmers also performed a 100 m front crawl in competition conditions, and then, 3 tests (25, 50, and 75 m) following the pacing strategy of the 100 m event. To be free of technical constraints, VO2 was not measured during the tests, but before and just at the end of each test with a 1 min breath-by-breath method. Each post-test VO2 measurement (after 25, 50, 75, and 100 m) allows us to reconstruct the VO2 kinetics of the 100 m performance. Our results differ from previous studies in that VO2 increases faster in the first half of the race (at 50 m, VO2 ≈ 94% VO2max), reaches VO2max at the 75 m mark; then a decrease in VO2 corresponding to 7% of VO2max appears during the last 25 m. These differences are supposed to be mainly the consequences of the adoption of technical elements and a pacing strategy similar to competition conditions. In the future, these observations may lead to different considerations of the bioenergetic contributions.

A simple and low-cost combustion method to prepare monoclinic VO2 with superior thermochromic properties

PubMed Central

Cao, Ziyi; Xiao, Xiudi; Lu, Xuanming; Zhan, Yongjun; Cheng, Haoliang; Xu, Gang

2016-01-01

In this approach, the VO2 nanoparticles have been successfully fabricated via combusting the low-cost precursor solution consisted of NH4VO3, C2H6O2 and C2H5OH. By the XRD, TEM and XPS analysis, it can be found that the synthetic monoclinic VO2 is single crystal and no impurity is defined. After dispersing the VO2 nanoparticles into the polymer, the solar modulation of VO2-based composite film is up to 12.5% with luminous transmission and haze around 62.2% and 0.5%, respectively. In other words, the composite films show high performance of thermochromic properties. This could open an efficient way to fabricate low-cost and large-scale VO2 (M) nanoparticles and thermochromic films. PMID:27976748

Prediction of maximal oxygen uptake by bioelectrical impedance analysis in overweight adolescents.

PubMed

Roberts, M D; Drinkard, B; Ranzenhofer, L M; Salaita, C G; Sebring, N G; Brady, S M; Pinchbeck, C; Hoehl, J; Yanoff, L B; Savastano, D M; Han, J C; Yanovski, J A

2009-09-01

Maximal oxygen uptake (VO(2max)), the gold standard for measurement of cardiorespiratory fitness, is frequently difficult to assess in overweight individuals due to physical limitations. Reactance and resistance measures obtained from bioelectrical impedance analysis (BIA) have been suggested as easily obtainable predictors of cardiorespiratory fitness, but the accuracy with which ht(2)/Z can predict VO(2max) has not previously been examined in overweight adolescents. The impedance index was used as a predictor of VO(2max) in 87 overweight girls and 47 overweight boys ages 12 to 17 with mean BMI of 38.6 + or - 7.3 and 42.5 + or - 8.2 in girls and boys respectively. The Bland Altman procedure assessed agreement between predicted and actual VO(2max). Predicted VO(2max) was significantly correlated with measured VO(2max) (r(2)=0.48, P<0.0001). Using the Bland Altman procedure, there was significant magnitude bias (r(2)=0.10; P<0.002). The limits of agreement for predicted relative to actual VO(2max) were -589 to 574 mL O(2)/min. The impedance index was highly correlated with VO(2max) in overweight adolescents. However, using BIA data to predict maximal oxygen uptake over-predicted VO(2max) at low levels of oxygen consumption and under-predicted VO(2max) at high levels of oxygen consumption. This magnitude bias, along with the large limits of agreement of BIA-derived predicted VO(2max), limit its usefulness in the clinical setting for overweight adolescents.

Interval training at 95% and 100% of the velocity at VO2 max: effects on aerobic physiological indexes and running performance.

PubMed

Denadai, Benedito S; Ortiz, Marcelo J; Greco, Camila C; de Mello, Marco T

2006-12-01

The objective of this study was to analyze the effect of two different high-intensity interval training (HIT) programs on selected aerobic physiological indices and 1500 and 5000 m running performance in well-trained runners. The following tests were completed (n=17): (i) incremental treadmill test to determine maximal oxygen uptake (VO2 max), running velocity associated with VO2 max (vVO2 max), and the velocity corresponding to 3.5 mmol/L of blood lactate concentration (vOBLA); (ii) submaximal constant-intensity test to determine running economy (RE); and (iii) 1500 and 5000 m time trials on a 400 m track. Runners were then randomized into 95% vVO2 max or 100% vVO2 max groups, and undertook a 4 week training program consisting of 2 HIT sessions (performed at 95% or 100% vVO2 max, respectively) and 4 submaximal run sessions per week. Runners were retested on all parameters at the completion of the training program. The VO2 max values were not different after training for both groups. There was a significant increase in post-training vVO2 max, RE, and 1500 m running performance in the 100% vVO2 max group. The vOBLA and 5000 m running performance were significantly higher after the training period for both groups. We conclude that vOBLA and 5000 m running performance can be significantly improved in well-trained runners using a 4 week training program consisting of 2 HIT sessions (performed at 95% or 100% vVO2 max) and 4 submaximal run sessions per week. However, the improvement in vVO2 max, RE, and 1500 m running performance seems to be dependent on the HIT program at 100% vVO2 max.

A comparison of practical assessment methods to determine treadmill, cycle and elliptical ergometer VO2peak

PubMed Central

Mays, Ryan J.; Boér, Nicholas F.; Mealey, Lisa M.; Kim, Kevin H.; Goss, Fredric L.

2015-01-01

This investigation compared estimated and predicted peak oxygen consumption (VO2peak) and maximal heart rate (HRmax) among the treadmill, cycle ergometer and elliptical ergometer. Seventeen women (mean ± SE: 21.9 ± .3 yrs) exercised to exhaustion on all modalities. ACSM metabolic equations were used to estimate VO2peak. Digital displays on the elliptical ergometer were used to estimate VO2peak. Two individual linear regression methods were used to predict VO2peak: 1) two steady state heart rate (HR) responses up to 85% of age-predicted HRmax, and 2) multiple steady state/non-steady state HR responses up to 85% of age-predicted HRmax. Estimated VO2peak for the treadmill (46.3 ± 1.3 ml · kg−1 · min−1) and the elliptical ergometer (44.4 ± 1.0 ml · kg−1 · min−1) did not differ. The cycle ergometer estimated VO2peak (36.5 ± 1.0 ml · kg−1 · min−1) was lower (p < .001) than the estimated VO2peak values for the treadmill and elliptical ergometer. Elliptical ergometer VO2peak predicted from steady state (51.4 ± .8 ml · kg−1 · min−1) and steady state/non-steady state (50.3 ± 2.0 ml · kg−1 · min−1) models were higher than estimated elliptical ergometer VO2peak, p < .01. HRmax and estimates of VO2peak were similar between the treadmill and elliptical ergometer, thus cross-modal exercise prescriptions may be generated. The use of digital display estimates of submaximal oxygen uptake for the elliptical ergometer may not be an accurate method for predicting VO2peak. Health-fitness professionals should use caution when utilizing submaximal elliptical ergometer digital display estimates to predict VO2peak. PMID:20393357

VO2 responses to intermittent swimming sets at velocity associated with VO2max.

PubMed

Libicz, Sebastien; Roels, Belle; Millet, Gregoire P

2005-10-01

While the physiological adaptations following endurance training are relatively well understood, in swimming there is a dearth of knowledge regarding the metabolic responses to interval training (IT). The hypothesis tested predicted that two different endurance swimming IT sets would induce differences in the total time the subjects swam at a high percentage of maximal oxygen consumption (VO(2)max). Ten trained triathletes underwent an incremental test to exhaustion in swimming so that the swimming velocity associated with VO(2)max (vVO(2)max) could be determined. This was followed by a maximal 400-m test and two intermittent sets at vVO(2)max: (a) 16 x 50 m with 15-s rest (IT(50)); (b) 8 x 100 m with 30-s rest (IT(100)). The times sustained above 95% VO(2)max (68.50 +/- 62.69 vs. 145.01 +/- 165.91 sec) and 95% HRmax (146.67 +/- 131.99 vs. 169.78 +/- 203.45 sec, p = 0.54) did not differ between IT(50) and IT(100)(values are mean +/- SD). In conclusion, swimming IT sets of equal time duration at vVO(2)max but of differing work-interval durations led to slightly different VO(2)and HR responses. The time spent above 95% of VO(2)max was twice as long in IT(100) as in IT (50), and a large variability between mean VO(2)and HR values was also observed.

Evolution of Structural and Electrical Properties of Oxygen-Deficient VO2 under Low Temperature Heating Process.

PubMed

Zhang, Jiasong; Zhao, Zhengjing; Li, Jingbo; Jin, Haibo; Rehman, Fida; Chen, Pengwan; Jiang, Yijie; Chen, Chunxu; Cao, Maosheng; Zhao, Yongjie

2017-08-16

Structural stability and functional performances of vanadium dioxide (VO 2 ) are strongly influenced by oxygen vacancies. However, the mechanism of metal-insulator transition (MIT) influenced by defects is still under debate. Here, we study the evolution of structure and electrical property of oxygen-deficient VO 2 by a low temperature annealing process (LTP) based on a truss-structured VO 2 nanonet. The oxygenation process of the oxygen-deficient VO 2 is greatly prolonged, which enables us to probe the gradual change of properties of the oxygen-deficient VO 2 . A continuous lattice reduction is observed during LTP. No recrystallization and structural collapse of the VO 2 nanonet can be found after LTP. The valence-band X-ray photoelectron spectroscopy (XPS) measurements indicate that the oxygen deficiency strongly affects the energy level of the valence band edge. Correspondingly, the resistance changes of the VO 2 films from 1 to 4.5 orders of magnitude are achieved by LTP. The effect of oxygen vacancy on the electric field driven MIT is investigated. The threshold value of voltage triggering the MIT decreases with increasing the oxygen vacancy concentration. This work demonstrates a novel and effective way to control the content of oxygen vacancies in VO 2 and the obvious impact of oxygen vacancy on MIT, facilitating further research on the role of oxygen vacancy in structure and MIT of VO 2 , which is important for the deep understanding of MIT and exploiting innovative functional application of VO 2 .

Orientation dependence of ferroelectric and piezoelectric properties of Bi3.15Nd0.85Ti3O12 thin films on Pt(100)/TiO2/SiO2/Si substrates

NASA Astrophysics Data System (ADS)

Hu, G. D.

2006-11-01

Bi3.15Nd0.85Ti3O12 (BNT0.85) thin films with (100) [α(100)=87.8%], (117) [α(117)=77.1%], and (001) [α(001)=98.8%] preferred orientations were deposited on Pt(100)/TiO2/SiO2/Si substrates using a metal organic decomposition process. The remanent polarization of (100)-predominant BNT0.85 film is about 50% and three times larger than those of (117)-preferred and (001)-oriented films, respectively, suggesting that the major polarization vector of BNT0.85 is close to the a axis rather than the c axis. This result can be further demonstrated by the piezoelectric measurements using an atomic force microscope in the piezoresponse mode.

Parameters controlling microstructures and resistance switching of electrodeposited cuprous oxide thin films

NASA Astrophysics Data System (ADS)

Yazdanparast, Sanaz

2016-12-01

Cuprous oxide (Cu2O) thin films were electrodeposited cathodically from a highly alkaline bath using tartrate as complexing agent. Different microstructures for Cu2O thin films were achieved by varying the applied potential from -0.285 to -0.395 V versus a reference electrode of Ag/AgCl at 50 °C in potentiostatic mode, and separately by changing the bath temperature from 25 to 50 °C in galvanostatic mode. Characterization experiments showed that both grain size and orientation of Cu2O can be controlled by changing the applied potential. Applying a high negative potential of -0.395 V resulted in smaller grain size of Cu2O thin films with a preferred orientation in [111] direction. An increase in the bath temperature in galvanostatic electrodeposition increased the grain size of Cu2O thin films. All the films in Au/Cu2O/Au-Pd cell showed unipolar resistance switching behavior after an initial FORMING process. Increasing the grain size of Cu2O thin films and decreasing the top electrode area increased the FORMING voltage and decreased the current level of high resistance state (HRS). The current in low resistance state (LRS) was independent of the top electrode area and the grain size of deposited films, suggesting a filamentary conduction mechanism in unipolar resistance switching of Cu2O.

Preparation and enhanced infrared response properties of ordered W-doped VO2 nanowire array

NASA Astrophysics Data System (ADS)

Xie, Bing He; Fu, Wen Biao; Fei, Guang Tao; Xu, Shao Hui; Gao, Xu Dong; Zhang, Li De

2018-04-01

In this article, pure and tungsten-doped (W-doped) highly ordered two-dimensional (2D) vanadium dioxide (VO2) nanowire arrays were successfully prepared by a hydrothermal treatment, followed by a self-assembly progress and the in-situ high temperature treatment. The infrared photodetector devices based on monoclinic VO2 (VO2(M)) and W-doped VO2(M) nanowires were comparatively studied . It was found that the device based on W-doped VO2(M) nanowires exhibits a rapid infrared response and an enhanced photoelectric responsivity of 21.4 mA/W under the incident infrared light intensity of 280 mW/cm2, which is nearly two orders of magnitude superior to pure VO2(M) nanowire array. Our experimental results provided a direct and convenient path for design of future high-performance photodetector devices.

Correlation between surface morphology and electrical properties of VO2 films grown by direct thermal oxidation method

NASA Astrophysics Data System (ADS)

Yoon, Joonseok; Park, Changwoo; Park, Sungkyun; Mun, Bongjin Simon; Ju, Honglyoul

2015-10-01

We investigate surface morphology and electrical properties of VO2 films fabricated by direct thermal oxidation method. The VO2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 104, and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO2 films reveals that the transport properties of VO2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

Pain threshold is achieved at intensity above anaerobic threshold in patients with intermittent claudication.

PubMed

Ritti-Dias, Raphael Mendes; de Moraes Forjaz, Cláudia Lúcia; Cucato, Gabriel Grizzo; Costa, Luis Augusto Riani; Wolosker, Nelson; de Fátima Nunes Marucci, Maria

2009-01-01

Walking training is considered as the first treatment option for patients with peripheral arterial disease and intermittent claudication (IC). Walking exercise has been prescribed for these patients by relative intensity of peak oxygen uptake (VO2peak), ranging from 40% to 70% VO2peak, or pain threshold (PT). However, the relationship between these methods and anaerobic threshold (AT), which is considered one of the best metabolic markers for establishing training intensity, has not been analyzed. Thus, the aim of this study was to compare, in IC patients, the physiological responses at exercise intensities usually prescribed for training (% VO2peak or % PT) with the ones observed at AT. Thirty-three IC patients performed maximal graded cardiopulmonary treadmill test to assess exercise tolerance. During the test, heart rate (HR), VO2, and systolic blood pressure were measured and responses were analyzed at the following: 40% of VO2peak; 70% of VO2peak; AT; and PT. Heart rate and VO2 at 40% and 70% of VO2peak were lower than those at AT (HR: -13 +/- 9% and -3 +/- 8%, P < .01, respectively; VO2: -52 +/- 12% and -13 +/- 15%, P < .01, respectively). Conversely, HR and VO2 at PT were slightly higher than those at AT (HR: +3 +/- 8%, P < .01; VO2: +6 +/- 15%, P = .04). None of the patients achieved the respiratory compensation point. Prescribing exercise for IC patients between 40% and 70% of VO2peak will induce a lower stimulus than that at AT, whereas prescribing exercise at PT will result in a stimulus above AT. Thus, prescribing exercise training for IC patients on the basis of PT will probably produce a greater metabolic stimulus, promoting better cardiovascular benefits.

Oxygen Costs of the Incremental Shuttle Walk Test in Cardiac Rehabilitation Participants: An Historical and Contemporary Analysis.

PubMed

Buckley, John P; Cardoso, Fernando M F; Birkett, Stefan T; Sandercock, Gavin R H

2016-12-01

The incremental shuttle walk test (ISWT) is a standardised assessment for cardiac rehabilitation. Three studies have reported oxygen costs (VO 2 )/metabolic equivalents (METs) of the ISWT. In spite of classic representations from these studies graphically showing curvilinear VO 2 responses to incremented walking speeds, linear regression techniques (also used by the American College of Sports Medicine [ACSM]) have been used to estimate VO 2 . The two main aims of this study were to (i) resolve currently reported discrepancies in the ISWT VO 2 -walking speed relationship, and (ii) derive an appropriate VO 2 versus walking speed regression equation. VO 2 was measured continuously during an ISWT in 32 coronary heart disease [cardiac] rehabilitation (CHD-CR) participants and 30 age-matched controls. Both CHD-CR and control group VO 2 responses were curvilinear in nature. For CHD-CR VO 2  = 4.4e 0.23 × walkingspeed (km/h) . The integrated area under the curve (iAUC) VO 2 across nine ISWT stages was greater in the CHD-CR group versus the control group (p < 0.001): CHD-CR = 423 (±86) ml·kg -1 ·min -1 ·km·h -1 ; control = 316 (±52) ml·kg -1 ·min -1 ·km·h -1 . CHD-CR group vs. control VO 2 was up to 30 % greater at higher ISWT stages. The curvilinear nature of VO 2 responses during the ISWT concur with classic studies reported over 100 years. VO 2 estimates for walking using linear regression models (including the ACSM) clearly underestimate values in healthy and CHD-CR participants, and this study provides a resolution to this when the ISWT is used for CHD-CR populations.

Impact of isovalent doping on radiation defects in silicon

NASA Astrophysics Data System (ADS)

Londos, C. A.; Sgourou, E. N.; Timerkaeva, D.; Chroneos, A.; Pochet, P.; Emtsev, V. V.

2013-09-01

Isovalent doping is an important process for the control of point defects in Si. Here, by means of infrared spectroscopy, we investigated the properties of the two main radiation-induced defects in Czochralski-Si (Cz-Si) the oxygen-vacancy (VO) and the carbon-oxygen (CiOi) centres. In particular, we investigated the effect of isovalent doping on the production, the thermal evolution, and the thermal stability of the VO and the CiOi defects. Additionally, we studied the reactions that participate upon annealing and the defects formed as a result of these reactions. Upon annealing VO is converted to VO2 defect although part of the CiOi is converted to CsO2i complexes. Thus, we studied the conversion ratios [VO2]/[VO] and [CsO2i]/[CiOi] with respect to the isovalent dopant. Additionally, the role of carbon in the above processes was discussed. A delay between the temperature characterizing the onset of the VO decay and the temperature characterizing the VO2 growth as well the further growth of VO2 after the complete disappearance of VO indicate that the VO to VO2 conversion is a complex phenomenon with many reaction processes involved. Differences exhibited between the effects of the various dopants on the properties of the two defects were highlighted. The results are discussed in view of density functional theory calculations involving the interaction of isovalent dopants with intrinsic defects, the oxygen and carbon impurities in Si.

Evidence for filamentary superconductivity up to 220 K in oriented multiphase Y-Ba-Cu-O thin films

NASA Astrophysics Data System (ADS)

Schönberger, R.; Otto, H. H.; Brunner, B.; Renk, K. F.

1991-02-01

We report on the observation of filamentary superconductivity up to 220 K in multiphase Y-Ba-Cu-O materials that are deposited as highly oriented thin films on (110)-SrTiO 3 substrates by laser ablation from ceramic targets. The high temperature zero resistivity states are reproducible after temperature cycling down to 80 K for samples treated by a special oxygenation and ozonization process at 340 K and measured in a pure oxygen atmosphere. Our results on thin films confirm former experiments of J.T. Chen and co-workers obtained on ceramic samples with preferred crystallite orientation. A close connection between superconductivity and structural instabilities of most likely ferroic nature, which are observed more often for YBa 2Cu 3O 7 in a narrow temperature range near 220 K, is suggested.

Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n = 0, 2, 4

NASA Astrophysics Data System (ADS)

Shibata, Yosei; Tsutsumi, Jun'ya; Matsuoka, Satoshi; Matsubara, Koji; Yoshida, Yuji; Chikamatsu, Masayuki; Hasegawa, Tatsuo

2015-04-01

We report the fabrication of high quality thin films for semiconducting organic donor-acceptor charge-transfer (CT) compounds, (diC8BTBT)(FnTCNQ) (diC8BTBT = 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and FnTCNQ [n = 0,2,4] = fluorinated derivatives of 7,7,8,8,-tetracyanoquinodimethane), which have a high degree of layered crystallinity. Single-phase and uniaxially oriented polycrystalline thin films of the compounds were obtained by co-evaporation of the component donor and acceptor molecules. Organic thin-film transistors (OTFTs) fabricated with the compound films exhibited n-type field-effect characteristics, showing a mobility of 6.9 × 10-2 cm2/V s, an on/off ratio of 106, a sub-threshold swing of 0.8 V/dec, and an excellent stability in air. We discuss the suitability of strong intermolecular donor-acceptor interaction and the narrow CT gap nature in compounds for stable n-type OTFT operation.

Influence of work-interval intensity and duration on time spent at a high percentage of VO2max during intermittent supramaximal exercise.

PubMed

Wakefield, Benjamin R; Glaister, Mark

2009-12-01

The purpose of this study was to examine the effect of work-interval duration (WID) and intensity on the time spent at, or above, 95% VO2max (T95 VO2max) during intermittent bouts of supramaximal exercise. Over a 5-week period, 7 physically active men with a mean (+/-SD) age, height, body mass, and VO2max of 22 +/- 5 years, 181.5 +/- 5.6 cm, 86.4 +/- 11.4 kg, and 51.5 +/- 1.5 ml.kg-1.min-1, respectively, attended 7 testing sessions. After completing a submaximal incremental test on a treadmill to identify individual oxygen uptake/running velocity relationships, subjects completed a maximal incremental test to exhaustion to VO2max and subsequently (from the aforementioned relationship) the minimum velocity required to elicit VO2max (vVO2max). In a random order, subjects then carried out 3 intermittent runs to exhaustion at both 105% and 115% vVO2max. Each test used a different WID (20 s, 25 s, or 30 s) interspersed with 20-second passive recovery periods. Results revealed no significant difference in T95 vVO2max for intermittent runs at 105% versus 115% vVO2max (p = 0.142). There was, however, a significant effect (p < 0.001) of WID on T95 VO2max, with WIDs of 30 seconds enabling more time relative to WIDs of 20 seconds (p = 0.018) and 25 seconds (p = 0.009). Moreover, there was an interaction between intensity and duration such that the effect of WID was magnified at the lower exercise intensity (p = 0.046). In conclusion, despite a number of limitations, the results of this investigation suggest that exercise intensities of approximately 105% vVO2max combined with WIDs greater than 25 seconds provide the best way of optimizing T95 VO2max when using fixed 20-second stationary rest periods.

Pore orientation effects on the kinetics of mesostructure loss in surfactant templated titania thin films

DOE PAGES

Das, Saikat; Nagpure, Suraj; Garlapalli, Ravinder K.; ...

2016-12-17

The mesostructure loss kinetics are measured as a function of the orientation of micelles in 2D hexagonal close packed (HCP) columnar mesostructured titania thin films using in situ grazing incidence small angle x-ray scattering (GISAXS). Complementary supporting information is provided by ex situ scanning electron microscopy. Pluronic surfactant P123 acts as the template to synthesize HCP structured titania thin films. When the glass substrates are modified with crosslinked P123, the micelles of the HCP mesophase align orthogonal to the films, whereas a mix of parallel and orthogonal alignment is found on unmodified glass. The rate of mesostructure loss of orthogonallymore » oriented (o-HCP) thin films (~60 nm thickness) prepared on modified substrate is consistently found to be less by a factor of 2.5 ± 0.35 than that measured for mixed orientation HCP films on unmodified substrates. The activation energy for mesostructure loss is only slightly greater for films on modified glass (155 ± 25 kJ/mol -1) than on unmodified (128 kJ/mol -1), which implies that the rate difference stems a greater activation entropy for mesostructure loss in o-HCP titania films. Nearly perfect orthogonal orientation of micelles on modified surfaces contributes to the lower rate of mesostructure loss by supporting the anisotropic stresses that develop within the films during annealing due to continuous curing, sintering and crystallization into the anatase phase during high temperature calcination (>450 °C). Because the film thickness dictates the propagation of orientation throughout the films and the degree of confinement, thicker (~250 nm) films cast onto P123-modified substrates have a much lower activation energy for mesostructure loss (89 ± 27 kJ/mol -1) due to the mix of orientations found in the films. Thus, in conclusion, this kinetic study shows that thin P123- templated o-HCP titania films are not only better able to achieve good orthogonal alignment of 3 the mesophase relative to thicker films or films on unmodified substrates, but that alignment of the mesophase in the films stabilizes the mesophase against thermally-induced mesostructure loss.« less

Pore orientation effects on the kinetics of mesostructure loss in surfactant templated titania thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Saikat; Nagpure, Suraj; Garlapalli, Ravinder K.

The mesostructure loss kinetics are measured as a function of the orientation of micelles in 2D hexagonal close packed (HCP) columnar mesostructured titania thin films using in situ grazing incidence small angle x-ray scattering (GISAXS). Complementary supporting information is provided by ex situ scanning electron microscopy. Pluronic surfactant P123 acts as the template to synthesize HCP structured titania thin films. When the glass substrates are modified with crosslinked P123, the micelles of the HCP mesophase align orthogonal to the films, whereas a mix of parallel and orthogonal alignment is found on unmodified glass. The rate of mesostructure loss of orthogonallymore » oriented (o-HCP) thin films (~60 nm thickness) prepared on modified substrate is consistently found to be less by a factor of 2.5 ± 0.35 than that measured for mixed orientation HCP films on unmodified substrates. The activation energy for mesostructure loss is only slightly greater for films on modified glass (155 ± 25 kJ/mol -1) than on unmodified (128 kJ/mol -1), which implies that the rate difference stems a greater activation entropy for mesostructure loss in o-HCP titania films. Nearly perfect orthogonal orientation of micelles on modified surfaces contributes to the lower rate of mesostructure loss by supporting the anisotropic stresses that develop within the films during annealing due to continuous curing, sintering and crystallization into the anatase phase during high temperature calcination (>450 °C). Because the film thickness dictates the propagation of orientation throughout the films and the degree of confinement, thicker (~250 nm) films cast onto P123-modified substrates have a much lower activation energy for mesostructure loss (89 ± 27 kJ/mol -1) due to the mix of orientations found in the films. Thus, in conclusion, this kinetic study shows that thin P123- templated o-HCP titania films are not only better able to achieve good orthogonal alignment of 3 the mesophase relative to thicker films or films on unmodified substrates, but that alignment of the mesophase in the films stabilizes the mesophase against thermally-induced mesostructure loss.« less

Compare the phase transition properties of VO2 films from infrared to terahertz range

NASA Astrophysics Data System (ADS)

Liang, Shan; Shi, Qiwu; Huang, Wanxia; Peng, Bo; Mao, Zhenya; Zhu, Hongfu

2018-06-01

VO2 with reversible semiconductor-metal phase transition properties is particularly available for the application in smart opto-electrical devices. However, there are rare reports on comparing its phase transition properties at different ranges. In this study, the VO2 films are designed with the similar crystalline structure and stoichiometry, but different morphologies by inorganic and organic sol-gel methods, and their phase transition characteristics are compared both at infrared and terahertz range. The results indicate that the VO2 film prepared by inorganic sol-gel method shows more compact nanostructure. It results in larger resistivity change, infrared and terahertz switching ratio in the VO2 film. Moreover, it presents that the phase transition intensity of VO2 film in terahertz range is more sensitive to its microstructure. This work is helpful for understanding the susceptibility of terahertz switching properties of VO2 to its microstructure. And it can provide insights for the applications of VO2 in terahertz smart devices.

Preparation and characterization of self-supporting thermochromic films composed of VO2(M)@SiO2 Nanofibers.

PubMed

Li, Shaotang; Li, Yamei; Jiang, Meng; Ji, Shidong; Luo, Hongjie; Gao, Yanfeng; Jin, Ping

2013-07-24

Nanofibers of VO2(A) with the diameter and length averagely at 100 nm and 10-20 μm were prepared via a facile one-step hydrothermal method by reducing NH4VO3 with 1,3-propylene glycol in an acidic solution. The obtained VO2(A) was coated by SiO2 to form VO2(A)@SiO2 core-shell nanocomposites, which were then transformed into VO2(M)@SiO2 by annealing under nitrogen atmosphere. The resulted composites maintained the original fibrous morphology, particularly with a large amount of pores emerging inside the fiber due to the volume shrinkage during the phase transition, which may improve its thermal insulation ability in real applications. The VO2(M)@SiO2 nanofibers were arranged into a self-supporting film by filtration, which shows excellent thermochromic properties.

Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt /Ti/SiO2/Si substrates

NASA Astrophysics Data System (ADS)

Zhai, Jiwei; Yao, Xi; Xu, Zhengkui; Chen, Haydn

2006-08-01

Thin films of ferroelectric PbxSr1-xTiO3 (PST) with x =0.3-0.7 and graded composition were fabricated on LaNiO3 buffered Pt /Ti/SiO2/Si substrates by a sol-gel deposition method. The thin films crystallized into a single perovskite structure and exhibited highly (100) preferred orientation after postdeposition annealing at 650°C. The grain size of PST thin films systematically decreased with the increase of Sr content. Dielectric and ferroelectric properties were investigated as a function of temperature, frequency, and dc applied field. Pb0.6Sr0.4TiO3 films showed a dominant voltage dependence of dielectric constant with a high tunability in a temperature range of 25-230°C. The compositionally graded PST thin films with x =0.3-0.6 also showed the high tunability. The graded thin films exhibited a diffused phase transition accompanied by a diffused peak in the temperature variations of dielectric constants. This kind of thin films has a potential in a fabrication of a temperature stable tunable device.

Oxygen consumption of the chicken embryo: interaction between temperature and oxygenation.

PubMed

Mortola, Jacopo P; Labbè, Katherine

2005-03-01

We measured the effects of hypoxia and changes in ambient temperature (T) on the oxygen consumption (VO2) of chicken embryos at embryonic days 11, 16 and 20 (E11, E16 and E20, respectively), and post-hatching day 1 (H1). Between 30 and 39 degrees C, at E11 and E16, VO2 changed linearly with T, as in ectothermic animals, with a Q10 of about 2.1. At E20, VO2 did not significantly change with T, indicating the onset of endothermy. At H1, a drop in T increased VO2, a clear thermogenic response. Hypoxia (11% O2 for 30 min) decreased VO2, by an amount that varied with T and age. At H1, hypoxia lowered VO2 especially at low T. At E20, hypoxic hypometabolism was similar at all T. At E11 and E16, hypoxia lowered VO2 only at the higher T. In fact, at E11, with T=39 degrees C even a modest hypoxia (15-18% O2) decreased VO2. Upon return to normoxia after 40 min of 11% O2, VO2 did not rise above the pre-hypoxic level, indicating that the hypometabolism during hypoxia did not generate an O2 debt. At E11, during modest hypoxia (16% O2) at 36 degrees C, the drop in VO2 was lifted by raising the T to 39 degrees C, suggesting that the hypoxic hypometabolism at 36 degrees C was not due to O2-supply limitation. In conclusion, the hypometabolic effects of hypoxia on the chicken embryo's VO2 depend on the development of the thermogenic ability, occurring predominantly at high T during the early (ectothermic phase) and at low T during the late (endothermic) phase. At E11, both low T and low oxygen force VO2 to drop. However, at a near-normal T, modest hypoxia promotes a hypometabolic response with the characteristics of regulated O2 conformism.

Micro-orientation control of silicon polymer thin films on graphite surfaces modified by heteroatom doping

NASA Astrophysics Data System (ADS)

Shimoyama, Iwao; Baba, Yuji; Hirao, Norie

2017-05-01

Near-edge X-ray absorption fine structure (NEXAFS) spectroscopy is applied to study orientation structures of polydimethylsilane (PDMS) films deposited on heteroatom-doped graphite substrates prepared by ion beam doping. The Si K-edge NEXAFS spectra of PDMS show opposite trends of polarization dependence for non irradiated and N2+-irradiated substrates, and show no polarization dependence for an Ar+-irradiated substrate. Based on a theoretical interpretation of the NEXAFS spectra via first-principles calculations, we clarify that PDMS films have lying, standing, and random orientations on the non irradiated, N2+-irradiated, and Ar+-irradiated substrates, respectively. Furthermore, photoemission electron microscopy indicates that the orientation of a PDMS film can be controlled with microstructures on the order of μm by separating irradiated and non irradiated areas on the graphite surface. These results suggest that surface modification of graphite using ion beam doping is useful for micro-orientation control of organic thin films.

Ceramic surfaces, interfaces and solid-state reactions

NASA Astrophysics Data System (ADS)

Heffelfinger, Jason Roy

Faceting, the decomposition of a surface into two or more surfaces of different orientation, is studied as a function of annealing time for ceramic surfaces. Single-crystals of Alsb2Osb3\\ (alpha-Alsb2Osb3 or corundum structure) are carefully prepared and characterized by atomic force microscopy, scanning electron microscopy and transmission electron microscopy. The mechanisms by which the originally smooth vicinal surface transforms into either a hill-and-valley or a terrace-and-step structure have been characterized. The progression of faceting is found to have a series of stages: surface smoothing, nucleation and growth of individual facets, formation of facet domains, coalescence of individual and facet domains and facet coarsening. These stages provide a model for the mechanisms of how other ceramic surfaces may facet into hill-and-valley and terrace-and-step surface microstructures. The well characterized Alsb2Osb3 surfaces provide excellent substrates by which to study the effect of surface structure on thin-film growth. Pulsed-laser deposition was used to grow thin films of yttria stabilized zirconia (YSZ) and Ysb2Osb3 onto annealed Alsb2Osb3 substrates. The substrate surface structure, such as surface steps and terraces, was found to have several effects on thin-film growth. Thin-films grown onto single-crystal substrates serve as a model geometry for studying thin-film solid-state reactions. Here, the reaction sequence and orientation relationship between thin films of Ysb2Osb3 and an Alsb2Osb3 substrate were characterized for different reaction temperatures. In a system were multiple reaction phases can form, the yttria aluminum monoclinic phase (YAM) was found to form prior to formation of other phases in this system. In a second system, a titanium alloy was reacted with single crystal Alsb2Osb3 in order to study phase formation in an intermetallic system. Both Tisb3Al and TiAl were found to form as reaction products and their orientation relationships with the Alsb2Osb3 are discussed.

Complexes of oxovanadium(IV), dioxovanadium(V) and dioxouranium(VI) with aminoacids in aqueous solution

NASA Astrophysics Data System (ADS)

Lagrange, P.; Schneider, M.; Lagrange, J.

1998-11-01

The equilibria between three oxocations (VO2+, VO2+ and UO22+) and several ?- aminoacids (glycine, serine, asparagine, lysine, aspartic acid and glutamic acid) are studied in aqueous solution. Stoichiometry and stability of the complexes formed are determined from a combination of potentiometric and spectroscopic measurements. Solution structures of the different complexes are proposed based on the thermodynamic results. The oxovanadium(IV) complexes appear less stable than the corresponding dioxouranium(VI) and dioxovanadium(V) complexes. VO2+ can be bound to only one ligand to form monodentate or chelate complexes. UO22+ and VO2+ cations may be chelated by one or two ligands. Les équilibres entre trois oxocations, VO2+, VO2+ et UO22+ et plusieurs α-aminoacides, glycine, sérine, asparagine, lysine et acides aspartique et glutamique, sont étudiés en solution aqueuse par potentiométrie couplée à la spectrophotométrie. Les complexes de VO2+ sont moins stables que les complexes de VO2+ et UO22+ de même stoechiométrie. VO2+ ne peut se lier qu'à un seul ligand pour former soit des complexes monodentés, soit des chélates. UO22+ et VO2+ peuvent être chélatés par un ou deux ligands. Des structures hypothétiques en solution sont proposées.

Comparison of distribution and toxicity following repeated oral dosing of different vanadium oxide nanoparticles in mice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Eun-Jung, E-mail: pejtoxic@hanmail.net

Vanadium is an important ultra-trace element derived from fuel product combustion. With the development of nanotechnology, vanadium oxide nanoparticles (VO NPs) have been considered for application in various fields, thus the possibility of release into the environment and human exposure is also increasing. Considering that verification of bioaccumulation and relevant biological responses are essential for safe application of products, in this study, we aimed to identify the physicochemical properties that determine their health effects by comparing the biological effects and tissue distribution of different types of VO NPs in mice. For this, we prepared five types of VO NPs, commercialmore » (C)-VO{sub 2} and -V{sub 2}O{sub 5} NPs and synthetic (S)-VO{sub 2}, -V{sub 2}O{sub 3,} and -V{sub 2}O{sub 5} NPs. While the hydrodynamic diameter of the two types of C-VO NPs was irregular and impossible to measure, those of the three types of S-VO NPs was in the range of 125–170 nm. The S- and C-V{sub 2}O{sub 5} NPs showed higher dissolution rates compared to other VO NPs. We orally dosed the five types of VO NPs (70 and 210 μg/mouse, approximately 2 and 6 mg/kg) to mice for 28 days and compared their biodistribution and toxic effects. We found that S-V{sub 2}O{sub 5} and S-V{sub 2}O{sub 3} NPs more accumulated in tissues compared to other three types of VO NPs, and the accumulated level was in order of heart>liver>kidney>spleen. Additionally, tissue levels of redox reaction-related elements and electrolytes (Na{sup +}, K{sup +}, and Ca{sup 2+}) were most clearly altered in the heart of treated mice. Notably, all S- and C-VO NPs decreased the number of WBCs at the higher dose, while total protein and albumin levels were reduced at the higher dose of S-V{sub 2}O{sub 5} and S-V{sub 2}O{sub 3} NPs. Taken together, we conclude that the biodistribution and toxic effects of VO NPs depend on their dissolution rates and size (surface area). Additionally, we suggest that further studies are needed to clarify effects of VO NPs on functions of the heart and the immune system. - Highlights: • We used commercial (C)-VO{sub 2} and -V{sub 2}O{sub 5} and synthetic (S)-VO{sub 2}, -V{sub 2}O{sub 3,} and -V{sub 2}O{sub 5} NPs. • The S- and C-V{sub 2}O{sub 5} NPs showed higher dissolution rates compared to other VO NPs. • S-V{sub 2}O{sub 5} and S-V{sub 2}O{sub 3} NPs more accumulated in tissues compared to other types of VO NPs. • Redox reaction-related elements and electrolytes were clearly altered in the heart. • With decreased body weight, immune and blood-related factors influence by all VO NPs. • Biodistribution and toxicity of VO NPs depend on their dissolution rates and size.« less

The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films

NASA Astrophysics Data System (ADS)

Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Zhang, Ping; Lan, Kuibo

2017-07-01

In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films with different preferred orientation were prepared on platinized silicon substrates by a modified sol-gel method. Our results indicate that the polarization switching current in PZT thin films is dependent on preferred orientation and poling temperature. In our measurements, (111)-oriented PZT has a larger polarization switching current than randomly oriented PZT, and with the increase of the degree of (111) preferred orientation and the poling temperature, the polarization switching current gradually increase. Considering the contact of PZT thin film with electrodes, the space-charged limited conduction (SCLC) combined with domain switching mechanism may be responsible for such phenomena. By analyzing the conduction data, we found the interface-limited Schottky emission (ES) and bulk-limited Poole-Frenkel hopping (PF) are not suitable for our samples.

Thin film materials and devices for resistive temperature sensing applications

NASA Astrophysics Data System (ADS)

Basantani, Hitesh A.

Thin films of vanadium oxide (VOx) and hydrogenated amorphous silicon (a-Si:H) are the two dominant material systems used in resistive infrared radiation detectors (microbolometers) for sensing long wave infrared (LWIR) wavelengths in the 8--14 microm range. Typical thin films of VO x (x < 2) currently used in the bolometer industry have a magnitude of temperature coefficient of resistance (TCR) between 2%/K -- 3%/K. In contrast, thin films of hydrogenated germanium (SiGe:H) have |TCR| between 3%/K to 4%/K. Devices made from either of these materials have resulted in similar device performance with NETD ≈ 25 mK. The performance of the microbolometers is limited by the electronic noise, especially 1/f noise. Therefore, regardless of the choice of bolometer sensing material and read out circuitry, manufacturers are constantly striving to reduce 1/f noise while simultaneously increasing TCR to give better signal to noise ratios in their bolometers and ultimately, better image quality with more thermal information to the end user. In this work, thin films of VOx and hydrogenated germanium (Ge:H), having TCR values > 4 %/K are investigated as potential candidates for higher sensitivity next generation of microbolometers. Thin films of VO x were deposited by Biased Target Ion Beam Deposition (BTIBD) (˜85 nm thick). Electrical characterization of lateral resistor structures showed resistivity ranging from 104 O--cm to 2.1 x 104 O--cm, TCR varying from --4%/K to --5%/K, normalized Hooge parameter (alphaH/n) of 5 x 10 -21 to 5 x 10-18 cm3. Thin films of Ge:H were deposited by plasma enhanced chemical vapor deposition (PECVD) by incorporating an increasing amount of crystal fraction in the growing thin films. Thin films of Ge:H having a mixed phase, amorphous + nanocrystalline, having a |TCR| > 6 %/K were deposited with resistivity < 2,300 O--cm and a normalized Hooge's parameter 'alphaH/n' < 2 x 10-20 cm3. Higher TCR materials are desired, however, such materials have higher resistivity and therefore unacceptable large electrical resistance in a lateral resistor configuration. This work looks at an alternate bolometer device design which incorporates higher TCR materials in a vertically integrated configuration. Thin films of high TCR hydrogenated germanium (Ge:H, |TCR| > 6%/K) and vanadium oxide (VOx, TCR > 5%/K) were integrated in lateral and through film configuration. The electrical performance of the vertically integrated devices is compared with lateral resistance structures. It was confirmed experimentally that the device impedance was significantly lowered while maintaining the signal to noise ratio of the lateral resistor configuration. The vertically integrated devices allow higher device currents without any increase in self heating. These structures may help reduce integration time and may result in higher frame rate. Finally, one dimensional arrays were fabricated using both lateral and vertically integrated configurations and their performance was evaluated. It was found that the performance of the lateral devices was limited by noise floor of the measurement setup used. However, due to the lower impedance of the vertically integrated resistors, a higher signal and therefore higher signal to noise ratio could be obtained. These vertically integrated devices exhibited low RMS noise values of 12 mK.

The annealing mechanism of the radiation-induced vacancy-oxygen defect in silicon

NASA Astrophysics Data System (ADS)

Voronkov, V. V.; Falster, R.; Londos, C. A.

2012-06-01

Annealing experiments on the VO defect (the A-centre) produced by radiation in silicon—reported long ago—have been re-examined in order to deduce the two most important properties of VO: its diffusivity and the equilibrium constant for VO dissociation into V + O. The loss rate of VO is accounted for by two major reactions. One is the conventional reaction of the trapping of mobile VO by oxygen, thus producing VO2. The other is an annihilation of vacancies, which coexist in an equilibrium ratio with VO, by radiation-produced interstitial point defects. In some cases, a minor reaction, VO + V, should also be taken into account. The emerging minor defects V2O are also highly mobile. They partially dissociate back and partially get trapped by oxygen producing stable V2O2 defects.

Vanadium(V) Complexes with Substituted 1,5-bis(2-hydroxybenzaldehyde)carbohydrazones and Their Use As Catalyst Precursors in Oxidation of Cyclohexane.

PubMed

Dragancea, Diana; Talmaci, Natalia; Shova, Sergiu; Novitchi, Ghenadie; Darvasiová, Denisa; Rapta, Peter; Breza, Martin; Galanski, Markus; Kožı́šek, Jozef; Martins, Nuno M R; Martins, Luísa M D R S; Pombeiro, Armando J L; Arion, Vladimir B

2016-09-19

Six dinuclear vanadium(V) complexes have been synthesized: NH4[(VO2)2((H)LH)] (NH4[1]), NH4[(VO2)2((t-Bu)LH)] (NH4[2]), NH4[(VO2)2((Cl)LH)] (NH4[3]), [(VO2)(VO)((H)LH)(CH3O)] (4), [(VO2)(VO)((t-Bu)LH)(C2H5O)] (5), and [(VO2)(VO)((Cl)LH)(CH3O)(CH3OH/H2O)] (6) (where (H)LH4 = 1,5-bis(2-hydroxybenzaldehyde)carbohydrazone, (t-Bu)LH4 = 1,5-bis(3,5-di-tert-butyl-2-hydroxybenzaldehyde)carbohydrazone, and (Cl)LH4 = 1,5-bis(3,5-dichloro-2-hydroxybenzaldehyde)carbohydrazone). The structures of NH4[1] and 4-6 have been determined by X-ray diffraction (XRD) analysis. In all complexes, the triply deprotonated ligand accommodates two V ions, using two different binding sites ONN and ONO separated by a diazine unit -N-N-. In two pockets of NH4[1], two identical VO2(+) entities are present, whereas, in those of 4-6, two different VO2(+) and VO(3+) are bound. The highest oxidation state of V ions was corroborated by X-ray data, indicating the presence of alkoxido ligand bound to VO(3+) in 4-6, charge density measurements on 4, magnetic susceptibility, NMR spectroscopy, spectroelectrochemistry, and density functional theory (DFT) calculations. All four complexes characterized by XRD form dimeric associates in the solid state, which, however, do not remain intact in solution. Compounds NH4[1], NH4[2], and 4-6 were applied as alternative selective homogeneous catalysts for the industrially significant oxidation of cyclohexane to cyclohexanol and cyclohexanone. The peroxidative (with tert-butyl hydroperoxide, TBHP) oxidation of cyclohexane was performed under solvent-free and additive-free conditions and under low-power microwave (MW) irradiation. Cyclohexanol and cyclohexanone were the only products obtained (high selectivity), after 1.5 h of MW irradiation. Theoretical calculations suggest a key mechanistic role played by the carbohydrazone ligand, which can undergo reduction, instead of the metal itself, to form an active reduced form of the catalyst.

On the use of response surface methodology to predict and interpret the preferred c-axis orientation of sputtered AlN thin films

NASA Astrophysics Data System (ADS)

Adamczyk, J.; Horny, N.; Tricoteaux, A.; Jouan, P.-Y.; Zadam, M.

2008-01-01

This paper deals with experimental design applied to response surface methodology (RSM) in order to determine the influence of the discharge conditions on preferred c-axis orientation of sputtered AlN thin films. The thin films have been deposited by DC reactive magnetron sputtering on Si (1 0 0) substrates. The preferred orientation was evaluated using a conventional Bragg-Brentano X-ray diffractometer ( θ-2 θ) with the CuKα radiation. We have first determined the experimental domain for 3 parameters: sputtering pressure (2-6 mTorr), discharge current (312-438 mA) and nitrogen percentage (17-33%). For the setup of the experimental design we have used a three factors Doehlert matrix which allows the use of the statistical response surface methodology (RSM) in a spherical domain. A four dimensional surface response, which represents the (0 0 0 2) peak height as a function of sputtering pressure, discharge current and nitrogen percentage, was obtained. It has been found that the main interaction affecting the preferential c-axis orientation was the pressure-nitrogen percentage interaction. It has been proved that a Box-Cox transformation is a very useful method to interpret and discuss the experimental results and leads to predictions in good agreement with experiments.

Time to Exhaustion at the VO2max Velocity in Swimming: A Review

PubMed Central

Fernandes, Ricardo J.; Vilas-Boas, J. Paulo

2012-01-01

The aim of this study was to present a review on the time to exhaustion at the minimum swimming velocity corresponding to maximal oxygen consumption (TLim-vVO2max). This parameter is critical both for the aerobic power and the lactate tolerance bioenergetical training intensity zones, being fundamental to characterize it, and to point out its main determinants. The few number of studies conducted in this topic observed that swimmers were able to maintain an exercise intensity corresponding to maximal aerobic power during 215 to 260 s (elite swimmers), 230 to 260 s (high level swimmers) and 310 to 325 s (low level swimmers), and no differences between genders were reported. TLim-vVO2max main bioenergetic and functional determinants were swimming economy and VO2 slow component (direct relationship), and vVO2max, velocity at anaerobic threshold and blood lactate production (inverse relationship); when more homogeneous groups of swimmers were analysed, the inverse correlation value between TLim-vVO2max and vVO2max was not so evident. In general, TLim-vVO2max was not related to VO2max. TLim-vVO2max seems also to be influenced by stroking parameters, with a direct relationship to stroke length and stroke index, and an inverse correlation with stroke rate. Assessing TLim-vVO2max, together with the anaerobic threshold and the biomechanical general parameters, will allow a larger spectrum of testing protocols application, helping to build more objective and efficient training programs. PMID:23486651

Control of magnetization reversal in oriented strontium ferrite thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roy, Debangsu, E-mail: debangsu@physics.iisc.ernet.in; Anil Kumar, P. S.

2014-02-21

Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al{sub 2}O{sub 3}(0001) substrate using Pulsed Laser Deposition technique. The angle dependent magnetic hysteresis, remanent coercivity, and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth.

Experimental and theoretical study of the reactions between neutral vanadium oxide clusters and ethane, ethylene, and acetylene.

PubMed

Dong, Feng; Heinbuch, Scott; Xie, Yan; Rocca, Jorge J; Bernstein, Elliot R; Wang, Zhe-Chen; Deng, Ke; He, Sheng-Gui

2008-02-13

Reactions of neutral vanadium oxide clusters with small hydrocarbons, namely C2H6, C2H4, and C2H2, are investigated by experiment and density functional theory (DFT) calculations. Single photon ionization through extreme ultraviolet (EUV, 46.9 nm, 26.5 eV) and vacuum ultraviolet (VUV, 118 nm, 10.5 eV) lasers is used to detect neutral cluster distributions and reaction products. The most stable vanadium oxide clusters VO2, V2O5, V3O7, V4O10, etc. tend to associate with C2H4 generating products V(m)O(n)C2H4. Oxygen-rich clusters VO3(V2O5)(n=0,1,2...), (e.g., VO3, V3O8, and V5O13) react with C2H4 molecules to cause a cleavage of the C=C bond of C2H4 to produce (V2O5)(n)VO2CH2 clusters. For the reactions of vanadium oxide clusters (V(m)O(n)) with C2H2 molecules, V(m)O(n)C2H2 are assigned as the major products of the association reactions. Additionally, a dehydration reaction for VO3 + C2H2 to produce VO2C2 is also identified. C2H6 molecules are quite stable toward reaction with neutral vanadium oxide clusters. Density functional theory calculations are employed to investigate association reactions for V2O5 + C2H(x). The observed relative reactivity of C2 hydrocarbons toward neutral vanadium oxide clusters is well interpreted by using the DFT calculated binding energies. DFT calculations of the pathways for VO3+C2H4 and VO3+C2H2 reaction systems indicate that the reactions VO3+C2H4 --> VO2CH2 + H2CO and VO3+C2H2 --> VO2C2 + H2O are thermodynamically favorable and overall barrierless at room temperature, in good agreement with the experimental observations.

Abnormal end-tidal PO(2) and PCO(2) at the anaerobic threshold correlate well with impaired exercise gas exchange in patients with left ventricular dysfunction.

PubMed

Kano, Hiroto; Koike, Akira; Hoshimoto-Iwamoto, Masayo; Nagayama, Osamu; Sakurada, Koji; Suzuki, Takeya; Tsuneoka, Hidekazu; Sawada, Hitoshi; Aizawa, Tadanori; Wasserman, Karlman

2012-01-01

The aim of the present study was to compare the end-tidal O(2) pressure (PETO(2)) to end-tidal CO(2) pressure (PETCO(2)) in cardiac patients during rest and during 2 states of exercise: at anaerobic threshold (AT) and at peak. The purpose was to see which metabolic state, PETO(2) or PETCO(2), best correlated with exercise limitation. Thirty-eight patients with left ventricular (LV) ejection fraction <40% underwent cardiopulmonary exercise testing (CPX). PETO(2) and PETCO(2) were measured during CPX, along with peak O(2) uptake (VO(2)), AT, slope of the increase in ventilation (VE) relative to the increase in CO(2) output (VCO(2)) (VE vs. VCO(2) slope), and the ratio of the increase in VO(2) to the increase in work rate (ΔVO(2)/ΔWR). Both PETO(2) and PETCO(2) measured at AT were best correlated with peakVO(2), AT, ΔVO(2)/ΔWR and VE vs. VCO(2) slope. PETO(2) at AT correlated with reduced peak VO(2) (r=-0.60), reduced AT (r=-0.52), reduced ΔVO(2)/ΔWR (r=-0.55) and increased VE vs. VCO(2) slope (r=0.74). PETCO(2) at AT correlated with reduced peak VO(2) (r=0.67), reduced AT (r=0.61), reduced ΔVO(2)/ΔWR (r=0.58) and increased VE vs. VCO(2) slope (r=-0.80). PETCO(2) and PETO(2) at AT correlated with peak VO(2), AT and ΔVO(2)/ΔWR, but best correlated with increased VE vs. VCO(2) slope. PETO(2) and PETCO(2) at AT can be used as a prime index of impaired cardiopulmonary function during exercise in patients with LV failure.

Vacancy-oxygen defects in p-type Si1-xGex

NASA Astrophysics Data System (ADS)

Sgourou, E. N.; Londos, C. A.; Chroneos, A.

2014-10-01

Oxygen-vacancy defects and, in particular, the VO pairs (known as A-centers) are common defects in silicon (Si) with a deleterious impact upon its properties. Although oxygen-vacancy defects have been extensively studied in Si there is far less information about their properties in p-type doped silicon germanium (Si1-xGex). Here, we use Fourier transform infrared spectroscopy to determine the production and evolution of oxygen-vacancy defects in p-type Si1-xGex. It was determined that the increase of Ge content affects the production and the annealing behavior of the VO defect as well as its conversion to the VO2 defect. In particular, both the VO production and the VO annealing temperature are reduced with the increase of Ge. The conversion ratio [VO2]/[VO] also decreases with the increase of x, although the ratios [VO3]/[VO2] and [VO4]/[VO3] show a tendency to increase for larger Ge contents. The results are discussed in view of recent experimental and theoretical studies in Si and Si1-xGex.

Unusual Ferroelectricity in Two-Dimensional Perovskite Oxide Thin Films.

PubMed

Lu, Jinlian; Luo, Wei; Feng, Junsheng; Xiang, Hongjun

2018-01-10

Two-dimensional (2D) ferroelectricity have attracted much attention due to their applications in novel miniaturized devices such as nonvolatile memories, field effect transistors, and sensors. Since most of the commercial ferroelectric (FE) devices are based on ABO 3 perovskite oxides, it is important to investigate the properties of 2D ferroelectricity in perovskite oxide thin films. Here, based on density functional theory (DFT) calculations, we find that there exist three kinds of in-plane FE states that originate from different microscopic mechanisms: (i) a proper FE state with the polarization along [110] due to the second-order Jahn-Teller effect related to the B ion with empty d-orbitals; (ii) a robust FE state with the polarization along [100] induced by the surface effect; (iii) a hybrid improper FE state with the polarization along [110] that is induced by the trilinear coupling between two rotational modes and the A-site displacement. Interestingly, the ferroelectricity in the latter two cases becomes stronger along with decreasing the thin film thickness, in contrast to the usual behavior. Moreover, the latter two FE states are compatible with magnetism since their stability does not depend on the occupation of the d-orbitals of the B-ion. These two novel 2D FE mechanisms provide new avenues to design 2D multiferroics, as we demonstrated in SrVO and CaFeO thin film cases. Our work not only reveals new physical mechanisms of 2D ferroelectricity in perovskite oxide thin films but also provides a new route to design the high-performance 2D FE and multiferroics.

Oriented thin films of mixture of a low-bandgap polymer and a fullerene derivative prepared by friction-transfer method

NASA Astrophysics Data System (ADS)

Tanigaki, Nobutaka; Mizokuro, Toshiko; Miyadera, Tetsuhiko; Shibata, Yousei; Koganezawa, Tomoyuki

2018-02-01

We have been studying oriented thin films of polymers fabricated by the friction-transfer method, which allows the alignment of a variety of conjugated polymers into highly oriented films. In this study, we prepared oriented blend films of a mixture of a low-bandgap polymer, poly{4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b‧]dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene-4,6-diyl} (PTB7), and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), which is a promising combination for application in organic solar cells. We obtained oriented blend films of PTB7 and PC71BM by the friction-transfer method from a solid block. Polarized UV-visible spectra show that the PTB7 chains were aligned parallel to the friction direction in the blend films. Grazing-incidence X-ray diffraction (GIXD) studies with synchrotron radiation suggested that the preferred orientation of PTB7 crystallites was face-on in the blend films. The GIXD results also showed the high uniaxial orientation of PTB7 chains in blend films. Photovoltaic devices were fabricated using the friction-transferred blend films of the PTB7 and PC71BM. These bulk heterojunction devices showed better performance than planar heterojunction devices fabricated using pure friction-transferred PTB7 films.

Global Measurements of Optically Thin Cirrus Clouds Using CALIOP

NASA Astrophysics Data System (ADS)

Ryan, R. A.; Avery, M. A.; Vaughan, M.

2017-12-01

Optically thin cirrus clouds, defined here as cold clouds consisting of randomly oriented ice crystals and having optical depths (τ) less than 0.3, are difficult to measure accurately. Thin cirrus clouds have been shown to have a net warming effect on the globe but, because passive instruments are not sensitive to optically thin clouds, the occurrence frequency of thin cirrus is greatly underestimated in historical passive sensor cloud climatology. One major strength of Cloud-Aerosol Lidar with Orthogonal Polarization (CALIOP) is its ability to detect these thin cirrus clouds, thus filling an important missing piece in the historical data record. This poster examines multiple years of CALIOP Level 2 data, focusing on those CALIOP retrievals identified as being optically thin (τ < 0.3), having a cold centroid temperature (TC < -40°C), and consisting solely of randomly oriented ice crystals. Using this definition, thin cirrus are identified and counted globally within each season. By examining the spatial, and seasonal distributions of these thin clouds we hope to gain a better understanding of how thin cirrus affect the atmosphere. Understanding when and where these clouds form and persist in the global atmosphere is the topic and focus of the presented poster.

Oxygen uptake and blood metabolic responses to a 400-m run.

PubMed

Hanon, Christine; Lepretre, Pierre-Marie; Bishop, David; Thomas, Claire

2010-05-01

This study aimed to investigate the oxygen uptake and metabolic responses during a 400-m run reproducing the pacing strategy used in competition. A portable gas analyser was used to measure the oxygen uptake (VO2) of ten specifically trained runners racing on an outdoor track. The tests included (1) an incremental test to determine maximal VO2 (VO2max) and the velocity associated with VO2(max) (v - VO2max), (2) a maximal 400-m (400T) and 3) a 300-m running test (300T) reproducing the exact pacing pattern of the 400T. Blood lactate, bicarbonate concentrations [HCO3(-)], pH and arterial oxygen saturation were analysed at rest and 1, 4, 7, 10 min after the end of the 400 and 300T. The peak VO2 recorded during the 400T corresponded to 93.9 +/- 3.9% of VO2max and was reached at 24.4 +/- 3.2 s (192 +/- 22 m). A significant decrease in VO2 (P < 0.05) was observed in all subjects during the last 100 m, although the velocity did not decrease below v - VO2max. The VO2 in the last 5 s was correlated with the pH (r = 0.86, P < 0.0005) and [HCO3(-)] (r = 0.70, P < 0.05) measured at the end of 300T. Additionally, the velocity decrease observed in the last 100 m was inversely correlated with [HCO3(-)] and pH at 300T (r = -0.83, P < 0.001, r = -0.69, P < 0.05, respectively). These track running data demonstrate that acidosis at 300 m was related to both the VO2 response and the velocity decrease during the final 100 m of a 400-m run.

Estimation of the rate of oxygen consumption of the common eider duck (Somateria mollissima), with some measurements of heart rate during voluntary dives.

PubMed

Hawkins, P A; Butler, P J; Woakes, A J; Speakman, J R

2000-09-01

The relationship between heart rate (f(H)) and rate of oxygen consumption (V(O2)) was established for a marine diving bird, the common eider duck (Somateria mollissima), during steady-state swimming and running exercise. Both variables increased exponentially with speed during swimming and in a linear fashion during running. Eleven linear regressions of V(O2) (ml kg(-1 )min(-1)) on f(H) (beats min(-1)) were obtained: five by swimming and six by running the birds. The common regression was described by V(O2)=10.1 + 0.15f(H) (r(2)=0.46, N=272, P<0.0001). The accuracy of this relationship for predicting mean V(O2) was determined for a group of six birds by recording f(H) continuously over a 2-day period and comparing estimated V(O2) obtained using the common regression with (i) V(O2) estimated using the doubly labelled water technique (DLW) and (ii) V(O2) measured using respirometry. A two-pool model produced the most accurate estimated V(O2) using DLW. Because of individual variability within mean values of V(O2) estimated using both techniques, there was no significant difference between mean V(O2) estimated using f(H) or DLW and measured V(O2) values (P>0.2), although individual errors were substantially less when f(H) was used rather than DLW to estimate V(O2). Both techniques are, however, only suitable for estimating mean V(O2) for a group of animals, not for individuals. Heart rate and behaviour were monitored during a bout of 63 voluntary dives by one female bird in an indoor tank 1.7 m deep. Tachycardia occurred both in anticipation of and following each dive. Heart rate decreased before submersion but was above resting values for the whole of the dive cycle. Mean f(H) at mean dive duration was significantly greater than f(H) while swimming at maximum sustainable surface speeds. Heart rate was used to estimate mean V(O2) during the dive cycle and to predict aerobic dive limit (ADL) for shallow dives.

Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Lim, Jun-Hyung; Lee, Je-Hun; Kim, Yong-Sung; Ahn, Byung Du; Kim, Dae Hwan

2014-10-01

The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy VO2+ or peroxide O22- with the increase of EOT. It was also found that the VO2+-related extrinsic factor accounts for 80%-92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O22- related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

Core-shell VO2@TiO2 nanorods that combine thermochromic and photocatalytic properties for application as energy-saving smart coatings

PubMed Central

Li, Yamei; Ji, Shidong; Gao, Yanfeng; Luo, Hongjie; Kanehira, Minoru

2013-01-01

Vanadium dioxide (VO2) is a Mott phase transition compound that can be applied as a thermochromic smart material for energy saving and comfort, and titanium dioxide (TiO2) is a well-known photocatalyst for self-cleaning coatings. In this paper, we report a VO2@TiO2 core-shell structure, in which the VO2 nanorod core exhibits a remarkable modulation ability for solar infrared light, and the TiO2 anatase shell exhibits significant photocatalytic degradation of organic dye. In addition, the TiO2 overcoating not only increased the luminous transmittance of VO2 based on an antireflection effect, but also modified the intrinsic colour of VO2 films from yellow to light blue. The TiO2 also enhanced the chemical stability of VO2 against oxidation. This is the first report of such a single nanoparticle structure with both thermochromic and photocatalytic properties that offer significant potential for creating a multifunctional smart coating. PMID:23546301

Core-shell VO2@TiO2 nanorods that combine thermochromic and photocatalytic properties for application as energy-saving smart coatings.

PubMed

Li, Yamei; Ji, Shidong; Gao, Yanfeng; Luo, Hongjie; Kanehira, Minoru

2013-01-01

Vanadium dioxide (VO2) is a Mott phase transition compound that can be applied as a thermochromic smart material for energy saving and comfort, and titanium dioxide (TiO2) is a well-known photocatalyst for self-cleaning coatings. In this paper, we report a VO2@TiO2 core-shell structure, in which the VO2 nanorod core exhibits a remarkable modulation ability for solar infrared light, and the TiO2 anatase shell exhibits significant photocatalytic degradation of organic dye. In addition, the TiO2 overcoating not only increased the luminous transmittance of VO2 based on an antireflection effect, but also modified the intrinsic colour of VO2 films from yellow to light blue. The TiO2 also enhanced the chemical stability of VO2 against oxidation. This is the first report of such a single nanoparticle structure with both thermochromic and photocatalytic properties that offer significant potential for creating a multifunctional smart coating.

Rapid and Efficient Redox Processes within 2D Covalent Organic Framework Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeBlase, Catherine R.; Hernández-Burgos, Kenneth; Silberstein, Katharine E.

2015-03-24

Two-dimensional covalent organic frameworks (2D COFs) are ideally suited for organizing redox-active subunits into periodic, permanently porous polymer networks of interest for pseudocapacitive energy storage. Here we describe a method for synthesizing crystalline, oriented thin films of a redox-active 2D COF on Au working electrodes. The thickness of the COF film was controlled by varying the initial monomer concentration. A large percentage (80–99%) of the anthraquinone groups are electrochemically accessible in films thinner than 200 nm, an order of magnitude improvement over the same COF prepared as a randomly oriented microcrystalline powder. As a result, electrodes functionalized with oriented COFmore » films exhibit a 400% increase in capacitance scaled to electrode area as compared to those functionalized with the randomly oriented COF powder. These results demonstrate the promise of redox-active COFs for electrical energy storage and highlight the importance of controlling morphology for optimal performance.« less

Rapid and Efficient Redox Processes within 2D Covalent Organic Framework Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeBlase, Catherine R.; Hernández-Burgos, Kenneth; Silberstein, Katharine E.

2015-02-17

Two-dimensional covalent organic frameworks (2D COFs) are ideally suited for organizing redox-active subunits into periodic, permanently porous polymer networks of interest for pseudocapacitive energy storage. Here we describe a method for synthesizing crystalline, oriented thin films of a redox-active 2D COF on Au working electrodes. The thickness of the COF film was controlled by varying the initial monomer concentration. A large percentage (80–99%) of the anthraquinone groups are electrochemically accessible in films thinner than 200 nm, an order of magnitude improvement over the same COF prepared as a randomly oriented microcrystalline powder. As a result, electrodes functionalized with oriented COFmore » films exhibit a 400% increase in capacitance scaled to electrode area as compared to those functionalized with the randomly oriented COF powder. These results demonstrate the promise of redox-active COFs for electrical energy storage and highlight the importance of controlling morphology for optimal performance.« less

Simulated swimming: a useful tool for evaluation the VO2 max of swimmers in the laboratory.

PubMed Central

Kimura, Y; Yeater, R A; Martin, R B

1990-01-01

This study was designed to develop a simulated swimming exercise (SS) so that peak VO2 would be assessed on swimmers in a laboratory setting. The subjects assumed a prone position on an incline bench and performed arm cranking on a Monark Rehab Trainer while performing a flutter kick against tension supplied by elastic cords. The SS test was compared to four peak VO2 tests: treadmill running (RN), tethered swimming (TW), bicycle ergometry (B), and arm cranking (AC). Eleven male varsity swimmers underwent each of the five VO2 max tests, and maximal cardiorespiratory indicators (HR, VE, VO2, O2 pulse, and RQ) were measured. The percentage of peak VO2 obtained during SS was compared to RN, TW, B, and AC. The SS test achieved 78 percent of RN, 91 percent of TW, 81 percent of B, and 124 percent of AC. There were no significant differences in VO2 in ml/kg.min between SS and TW. As expected, RN and B were significantly higher, while AC was lower. Ten subjects performed the SS test twice on two separate days within one week. The reliability of VO2 max in ml/kg.min was 0.95. the validity of VO2 max in ml/kg.min in the SS test vs. RN was 0.68. The SS test is reliable and can be used as effectively as TW to assess the VO2 max of swimmers in a laboratory setting. PMID:2078808

{001} Oriented piezoelectric films prepared by chemical solution deposition on Ni foils

NASA Astrophysics Data System (ADS)

Yeo, Hong Goo; Trolier-McKinstry, Susan

2014-07-01

Flexible metal foil substrates are useful in some microelectromechanical systems applications including wearable piezoelectric sensors or energy harvesters based on Pb(Zr,Ti)O3 (PZT) thin films. Full utilization of the potential of piezoelectrics on metal foils requires control of the film crystallographic texture. In this study, {001} oriented PZT thin films were grown by chemical solution deposition (CSD) on Ni foil and Si substrates. Ni foils were passivated using HfO2 grown by atomic layer deposition in order to suppress substrate oxidation during subsequent thermal treatment. To obtain the desired orientation of PZT film, strongly (100) oriented LaNiO3 films were integrated by CSD on the HfO2 coated substrates. A high level of {001} LaNiO3 and PZT film orientation were confirmed by X-ray diffraction patterns. Before poling, the low field dielectric permittivity and loss tangents of (001) oriented PZT films on Ni are near 780 and 0.04 at 1 kHz; the permittivity drops significantly on poling due to in-plane to out-of-plane domain switching. (001) oriented PZT film on Ni displayed a well-saturated hysteresis loop with a large remanent polarization ˜36 μC/cm2, while (100) oriented PZT on Si showed slanted P-E hysteresis loops with much lower remanent polarizations. The |e31,f| piezoelectric coefficient was around 10.6 C/m2 for hot-poled (001) oriented PZT film on Ni.

Transparent optically vanadium dioxide thermochromic smart film fabricated via electrospinning technique

NASA Astrophysics Data System (ADS)

Lu, Yuan; Xiao, Xiudi; Cao, Ziyi; Zhan, Yongjun; Cheng, Haoliang; Xu, Gang

2017-12-01

The monoclinic phase vanadium dioxide VO2 (M) based transparent thermochromic smart films were firstly fabricated through heat treatment of opaque VO2-based composite nanofibrous mats, which were deposited on the glass substrate via electrospinning technique. Noteworthily, the anti-oxidation property of VO2 smart film was improved due to inner distribution of VO2 in the polymethylmethacrylate (PMMA) nanofibers, and the composite mats having water contact angle of 165° determined itself good superhydrophobic property. Besides, PMMA nanofibrous mats with different polymer concentrations demonstrated changeable morphology and fiber diameter. The VO2 nanoparticles having diameter of 30-50 nm gathered and exhibited ellipse-like or belt-like structure. Additionally, the solar modulation ability of PMMA-VO2 composite smart film was 6.88% according to UV-Vis-NIR spectra. The research offered a new notion for fabricating transparent VO2 thermochromic material.

Aerobic Fitness Level Typical of Elite Athletes is not Associated With Even Faster VO2 Kinetics During Cycling Exercise

PubMed Central

Figueira, Tiago R.; Caputo, Fabrizio; Machado, Carlos E.P.; Denadai, Benedito S.

2008-01-01

The aim of this study was to address the question if the VO2 kinetics is further improved as the aerobic training status increases from trained to elite level athletes. Maximal oxygen uptake (VO2max), work-rate associated to VO2max (IVO2max) and VO2 kinetics of moderate (Mod) and maximal exercise (Max) were determined in fifty- five subjects. Then, they were assigned into three groups: low (LF), intermediate (IF) and high (HF) aerobic fitness level. In average, the VO2max of LF, IF and HF groups were, respectively, 36.0 ± 3.1, 51.1 ± 4.5 and 68.1 ± 3.9 ml·kg·min-1 (p ≤ 0.05 among each other). VO2 kinetics mean response time of both exercise intensities were significantly faster (p ≤ 0.05) in HF (Mod, 27.5 ± 5.5 s; Max, 32.6 ± 8.3 s) and IF (Mod, 25.0 ± 3.1 s; Max, 42.6 ± 10.4 s) when compared to LF (Mod, 35.7 ± 7.9 s; Max: 57.8 ± 17.8 s). We can conclude that VO2 kinetics is improved as the fitness level is increased from low to intermediate but not further improved as the aerobic fitness level increases from intermediate to high. Key points Currently, it is reasonable to believe that the rate-limiting step of VO2 kinetics depends on exercise intensity. The well known physiological adaptations induced by endurance training are likely the most extreme means to overcome rate-limiting steps determining VO2 kinetics across exercise intensities. However, exercise adaptation leading individuals to the high-end of aerobic fitness level range (VO2max > 65 ml.kg.min-1) is not able to further improve VO2 kinetics during both, moderate and maximal intensity exercise. PMID:24150145

Physiologic responses during indoor cycling.

PubMed

Battista, Rebecca A; Foster, Carl; Andrew, Jessica; Wright, Glenn; Lucia, Alejandro; Porcari, John P

2008-07-01

During the last decade, there has been active interest in indoor cycling (e.g., spinning) as a method of choreographed group exercise. Recent studies have suggested that exercise intensity during indoor cycling may be quite high and may transiently exceed Vo2max. This study sought to confirm these findings, as the apparent high intensity of indoor cycling has implications for both the efficacy and the risk of indoor cycling as an exercise method. Twenty healthy female students performed an incremental exercise test to define Vo2max and performed 2 videotaped indoor exercise classes lasting 45 minutes and 35 minutes. Vo2, heart rate (HR), and rating of perceived exertion (RPE) were measured during the indoor cycling classes, with Vo2 data integrated in 30-second intervals. The mean %Vo2max during the indoor cycling classes was modest (74 +/- 14% Vo2max and 66 +/- 14%Vo2max, respectively). However, 52% and 35% of the time during the 45- and 35-minute classes was spent at intensities greater than the ventilatory threshold (VT). The HR response indicated that 35% and 38% of the session time was above the HR associated with VT. In 10 of the 40 exercise sessions, there were segments in which the momentary Vo2 exceeded Vo2max observed during incremental testing, and the cumulative time with exercise intensity greater than Vo2max ranged from 0.5 to 14.0 minutes. It can be concluded that although the intensity of indoor cycling in healthy, physically active women is moderate, there are frequent observations of transient values of Vo2 exceeding Vo2max, and a substantial portion of the exercise bouts at intensities greater than VT. As such, the data suggest that indoor cycling must be considered a high-intensity exercise mode of exercise training, which has implications for both efficacy and risk.

Prognostic impact of peakVO2-changes in stable CHF on chronic beta-blocker treatment.

PubMed

Frankenstein, L; Nelles, M; Hallerbach, M; Dukic, D; Fluegel, A; Schellberg, D; Katus, H A; Remppis, A; Zugck, C

2007-11-15

Peak oxygen uptake (pVO2) is used for risk stratification in chronic heart failure (CHF), but little is known about the prognostic impact of pVO2-changes in patients on chronic beta-blocker (BBL) therapy. We therefore prospectively evaluated individual pVO2-changes at a 6-month interval in patients all receiving BBL. 194 patients with stable CHF on stable medication were included (V1) and underwent clinical evaluation and exercise testing. Testing was repeated (V2) at 5.7+/-1.5 months after V1 and patients were followed >12 months after V2. Death or hospitalisation due to cardiac reasons was the predefined EP (EPP, end-point positive; n=62; EPN, end-point negative; n=113). Initial characteristics did not differ between EPP and EPN. Multivariate cox regression analysis revealed that change of pVO2 (EPP: -0.6+/-2.6 ml/kg min; EPN: +2.5+/-3.3 ml/kg min; p<0.001) was independent to pVO2, LVEF, NTproBNP and NYHA at V2 for prediction of the combined end-point during follow-up. An increase of pVO2 by 10% was identified as an adequate cut-off value for risk stratification and ROC-analysis showed the significant incremental prognostic value of the determination of pVO2 changes in combination with pVO2. Serial measurements of pVO2 yield additional information for risk stratification in clinically homogenous CHF patients receiving BBL. This is the first study demonstrating this fact within a narrow predefined interval with all patients on BBL.

Epitaxial Growth of Oriented Metalloporphyrin Network Thin Film for Improved Selectivity of Volatile Organic Compounds.

PubMed

Li, De-Jing; Gu, Zhi-Gang; Vohra, Ismail; Kang, Yao; Zhu, Yong-Sheng; Zhang, Jian

2017-05-01

This study reports an oriented and homogenous cobalt-metalloporphyrin network (PIZA-1) thin film prepared by liquid phase epitaxial (LPE) method. The thickness of the obtained thin films can be well controlled, and their photocurrent properties can also be tuned by LPE cycles or the introduction of conductive guest molecules (tetracyanoquinodimethane and C 60 ) into the PIZA-1 pores. The study of quartz crystal microbalance adsorption confirms that the PIZA-1 thin film with [110]-orientation presents much higher selectivity of benzene over toluene and p-xylene than that of the PIZA-1 powder with mixed orientations. These results reveal that the selective adsorption of volatile organic compounds highly depends on the growth orientations of porphyrin-based metal-organic framework thin films. Furthermore, the work will provide a new perspective for developing important semiconductive sensing materials with improved selectivity of guest compounds. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Controlling compositional homogeneity and crystalline orientation in Bi 0.8 Sb 0.2 thermoelectric thin films [Control of composition and crystallinity in Bi 0.8Sb 0.2 thermoelectric thin films].

DOE PAGES

Rochford, C.; Medlin, D. L.; Erickson, K. J.; ...

2015-12-01

Controlling alloy composition, crystalline quality, and crystal orientation is necessary to achieve high thermoelectric performance in Bi 1-xSb x thin films. These microstructural attributes are demonstrated in this letter via co-sputter deposition of Bi and Sb metals on Si/SiO 2 substrates followed by ex-situ post anneals ranging from 200 – 300 °C in forming gas with rapid cooling to achieve orientation along the trigonal axis. We show with cross-sectional transmission electron microscopy and energy-dispersive X-ray spectrometry that 50 – 95% of the Sb segregates at the surface upon exposure to air during transfer. This then forms a nanocrystalline Sb 2Omore » 3 layer upon annealing, leaving the bulk of the film primarily Bi metal which is a poor thermoelectric material. We demonstrate a SiN capping technique to eliminate Sb segregation and preserve a uniform composition throughout the thickness of the film. Given that the Bi 1-xSb x solid solution melting point depends on the Sb content, the SiN cap allows one to carefully approach but not exceed the melting point during annealing. This leads to the strong orientation along the trigonal axis and high crystalline quality desired for thermoelectric applications.« less

Structures, physicochemical and cytoprotective properties of new oxidovanadium(IV) complexes -[VO(mIDA)(dmbipy)]·1.5H2O and [VO(IDA)(dmbipy)]·2H2O

NASA Astrophysics Data System (ADS)

Drzeżdżon, Joanna; Jacewicz, Dagmara; Wyrzykowski, Dariusz; Inkielewicz-Stępniak, Iwona; Sikorski, Artur; Tesmar, Aleksandra; Chmurzyński, Lech

2017-09-01

New oxidovanadium(IV) complexes with a modification of the ligand in the VO2+ coordination sphere were synthesized. [VO(mIDA)(dmbipy)]•1.5H2O and [VO(IDA)(dmbipy)]•2H2O were obtained as dark green crystals and grey-green powder, respectively (mIDA = N-methyliminodiacetic anion, IDA = iminodiacetic anion, dmbipy = 4,4‧-dimethoxy-2,2‧-dipyridyl). The crystal structure of [VO(mIDA)(dmbipy)]·1.5H2O has been determined by the X-ray diffraction method. The studies of structure of [VO(mIDA)(dmbipy)]•1.5H2O have shown that this compound occurs in the crystal as two rotational conformers. Furthermore, the stability constants of [VO(mIDA)(dmbipy)]•1.5H2O and [VO(IDA)(dmbipy)]•2H2O complexes in aqueous solutions were studied by using the potentiometric titration method and, consequently, determined using the Hyperquad2008 program. Moreover, the title complexes were investigated as antioxidant substances. The impact of the structure modification in the VO2+ complexes on the radical scavenging activity has been studied. The ability to scavenge the superoxide radical by two complexes - [VO(mIDA)(dmbipy)]·1.5H2O and [VO(IDA)(dmbipy)]·2H2O was studied by cyclic voltammetry (CV) and nitrobluetetrazolium (NBT) methods. The title complexes were also examined by the spectrophotometric method as scavengers of neutral organic radical - 1,1-diphenyl-2-picrylhydrazyl (DPPH•) and radical cation - 2,2'-azinobis-(3-ethylbenzothiazoline)-6-sulfonic acid (ABTS•+). Furthermore, the biological properties of two oxidovanadium(IV) complexes were investigated in relation to its cytoprotective properties by the MTT and LDH tests based on the hippocampal HT22 neuronal cell line during the oxidative damage induced by hydrogen peroxide. Finally, the results presented in this paper have shown that the both new oxidovanadium(IV) complexes with the 4,4‧-dimethoxy-2,2‧-dipyridyl ligand can be treated as the cytoprotective substances.

Facile synthesis, phase transition, optical switching and oxidation resistance properties of belt-like VO{sub 2}(A) and VO{sub 2}(M) with a rectangular cross section

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yifu; Huang, Yanfen; Zhang, Juecheng

2012-08-15

Highlights: ► Belt-like VO{sub 2}(A) with a rectangular cross section was synthesized. ► The formation mechanism of belt-like VO{sub 2}(A) was proposed. ► Belt-like VO{sub 2}(M) was prepared by the irreversible transformation of VO{sub 2}(A). ► VO{sub 2}(A) and VO{sub 2}(M) can be used as the optical switching materials. ► VO{sub 2}(A) and VO{sub 2}(M) have good oxidation resistance below 400 °C in air. -- Abstract: Belt-like VO{sub 2}(A) with a rectangular cross section (VA-RCS) was successfully synthesized using V{sub 2}O{sub 5}, H{sub 2}C{sub 2}O{sub 4}·2H{sub 2}O and H{sub 2}O as the starting materials by a facile hydrothermal approach. Somemore » synthetic parameters, such as, the reaction time, reaction temperature and concentration of H{sub 2}C{sub 2}O{sub 4}·2H{sub 2}O, were systematically investigated to control the fabrication of belt-like VA-RCS. The formation mechanism of belt-like VA-RCS was proposed. Subsequently, belt-like VO{sub 2}(M) with a rectangular cross section (VM-RCS) was prepared by the irreversible transformation of VA-RCS at 700 °C for 2 h under the inert atmosphere. The phase transition temperature (T{sub c}) of VA-RCS and VM-RCS was evaluated by DSC test. The optical switching properties of VA-RCS and VM-RCS were studied by the variable-temperature infrared spectra, and it was found that the as-obtained VA-RCS and VM-RCS could be used as the optical switching materials. Furthermore, the oxidation resistance properties of VA-RCS and VM-RCS were investigated by TGA, indicating that they have good thermal stability and oxidation resistance below 400 °C in air.« less

Chemical bond parameters and photoluminescence of a natural-white-light Ca{sub 9}La(VO{sub 4}){sub 7}:Tm{sup 3+},Eu{sup 3+} with one O{sup 2−}→V{sup 5+} charge transfer and dual f-f transition emission centers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Ling; Liu, Xiao Guang; Department of Physics, Pukyong National University, Busan 608-737

2015-01-15

The relationship between the photoluminescence properties and the crystal structure of undoped, Eu{sup 3+} or/ and Tm{sup 3+} singly or codoped Ca{sub 9}La(VO{sub 4}){sub 7} (CLaVO) samples was discussed. Under the excitation of UV light, CLaVO:Tm{sup 3+}, CLaVO, and CLaVO:Eu{sup 3+} exhibit the characteristic emissions of Tm{sup 3+} ({sup 1}G{sub 4}→{sup 3}H{sub 6}, blue), O{sup 2−}→V{sup 5+} charge transfer (CT), and Eu{sup 3+} ({sup 5}D{sub 0}→{sup 7}F{sub 2}, red), respectively. By adjusting the doping concentration of Tm{sup 3+} and Eu{sup 3+} ions in CLaVO, a natural white emission in a single composition with the color temperature at 6181 K wasmore » obtained. Based on the dielectric theory of complex crystal, the chemical bond parameters of La-O and V-O bonds were quantitatively calculated. The standard deviation of environmental factor of every bond (EFSD), which can be expressed as σ(h{sub e{sub i}})=√((1/N)∑{sub i=1}{sup N}(h{sub e{sub i}}−μ){sup 2}) (h{sub e{sub i}}=(f{sub c{sub i}}α{sub b{sub i}}){sup 1/2}Q{sub B{sub i}} and μ=(1/N)∑{sub i=1}{sup N}h{sub e{sub i}}), was proposed to quantitatively express the distortion degree of VO{sub 4}{sup 3−} from that of an ideal tetrahedron. The maximum change of EFSD comes from the [VO{sub 4}]{sup −} tetrahedra in CLaVO sample by comparison with that of EFSD of isostructural Ca{sub 9}Gd(VO{sub 4}){sub 7}. This is possible the key reason that the undoped CLaVO sample has self-activated emission while the self-activated emission of its isostructural Ca{sub 9}Gd(VO{sub 4}){sub 7} sample cannot be found. The quantitative calculation also demonstrated that the broad excitation bands at 319 nm in CLaVO:Tm and at 335 nm in CLaVO:Eu were due to the O-V2 and O-V3 (overlap with O-V2) CT, not the CT energy of O{sup 2−}-Eu1{sup 3+} (O{sup 2−}-Tm1{sup 3+}), O{sup 2−}-Eu2{sup 3+} (O{sup 2−}-Tm2{sup 3+}), and O{sup 2−}-Eu3{sup 3+} (O{sup 2−}-Tm3{sup 3+}). The environmental factors surrounding the atoms V1, V2 and V3 were calculated to be 1.577, 1.6379 and 1.7554, respectively. It can be demonstrated that the excitation spectra at 319 nm for CLaVO:Tm and 335 nm for CLaVO:Eu came from the O-V2 and O-V3 CT, respectively. - Graphical abstracts: The relationship between the photoluminescence properties and the crystal structure of undoped, Eu{sup 3+} or/ and Tm{sup 3+} singly or codoped Ca{sub 9}La(VO{sub 4}){sub 7} (CLaVO) samples was discussed experimentally and theoretically. - Highlights: ●The photoluminescence properties of Ca{sub 9}La(VO{sub 4}){sub 7}:Eu, Tm were measured. ●The tunable color including white emission can be obtained. ●The important chemical bond parameters of O-V were calculated quantitatively. ●The standard deviation of environmental factor of every bond was proposed. ●The theoretical analysis of the self-activated emission for Ca{sub 9}La(VO{sub 4}){sub 7} was given.« less

The slow component of O(2) uptake is not accompanied by changes in muscle EMG during repeated bouts of heavy exercise in humans.

PubMed

Scheuermann, B W; Hoelting, B D; Noble, M L; Barstow, T J

2001-02-15

1. We hypothesized that either the recruitment of additional muscle motor units and/or the progressive recruitment of less efficient fast-twitch muscle fibres was the predominant contributor to the additional oxygen uptake (VO2) observed during heavy exercise. Using surface electromyographic (EMG) techniques, we compared the VO2 response with the integrated EMG (iEMG) and mean power frequency (MPF) response of the vastus lateralis with the VO2 response during repeated bouts of moderate (below the lactate threshold, < LT) and heavy (above the lactate threshold, > LT) intensity cycle ergometer exercise. 2. Seven male subjects (age 29 +/- 7 years, mean +/- S.D.) performed three transitions to a work rate (WR) corresponding to 90 % LT and two transitions to a work rate that would elicit a VO2 corresponding to 50 % of the difference between peak VO2 and the LT (i.e. Delta50 %, > LT1 and > LT2). 3. The VO2 slow component was significantly reduced by prior heavy intensity exercise (> LT1, 410 +/- 196 ml min(-1); > LT2, 230 +/- 191 ml min-1). The time constant (tau), amplitude (A) and gain (DeltaVO2/DeltaWR) of the primary VO2 response (phase II) were not affected by prior heavy exercise when a three-component, exponential model was used to describe the V2 response. 4. Integrated EMG and MPF remained relatively constant and at the same level throughout both > LT1 and > LT2 exercise and therefore were not associated with the VO2 slow component. 5. These data are consistent with the view that the increased O2 cost (i.e. VO2 slow component) associated with performing heavy exercise is coupled with a progressive increase in ATP requirements of the already recruited motor units rather than to changes in the recruitment pattern of slow versus fast-twitch motor units. Further, the lack of speeding of the kinetics of the primary VO2 component with prior heavy exercise, thought to represent the initial muscle VO2 response, are inconsistent with O2 delivery being the limiting factor in V > O2 kinetics during heavy exercise.

Near-ambient pressure XPS of high-temperature surface chemistry in Sr2Co2O5 thin films

DOE PAGES

Hong, Wesley T.; Stoerzinger, Kelsey; Crumlin, Ethan J.; ...

2016-02-11

Transition metal perovskite oxides are promising electrocatalysts for the oxygen reduction reaction (ORR) in fuel cells, but a lack of fundamental understanding of oxide surfaces impedes the rational design of novel catalysts with improved device efficiencies. In particular, understanding the surface chemistry of oxides is essential for controlling both catalytic activity and long-term stability. Thus, elucidating the physical nature of species on perovskite surfaces and their catalytic enhancement would generate new insights in developing oxide electrocatalysts. In this article, we perform near-ambient pressure XPS of model brownmillerite Sr 2Co 2O 5 (SCO) epitaxial thin films with different crystallographic orientations. Detailedmore » analysis of the Co 2p spectra suggests that the films lose oxygen as a function of temperature. Moreover, deconvolution of the O 1s spectra shows distinct behavior for (114)-oriented SCO films compared to (001)-oriented SCO films, where an additional bulk oxygen species is observed. These findings indicate a change to a perovskite-like oxygen chemistry that occurs more easily in (114) SCO than (001) SCO, likely due to the orientation of oxygen vacancy channels out-of-plane with respect to the film surface. This difference in surface chemistry is responsible for the anisotropy of the oxygen surface exchange coefficient of SCO and may contribute to the enhanced ORR kinetics of La 0.8Sr 0.2CoO 3-δ thin films by SCO surface particles observed previously.« less

Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices

NASA Astrophysics Data System (ADS)

Jang, Jun Tae; Ko, Daehyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Yu, Hye Ri; Ahn, Geumho; Jung, Haesun; Rhee, Jihyun; Lee, Heesung; Choi, Sung-Jin; Kim, Dong Myong; Kim, Dae Hwan

2018-02-01

In this study, we investigated how the structure and oxygen flow rate (OFR) during the sputter-deposition affects the photo-responses of amorphous indium-gallium-zinc-oxide (a-IGZO)-based photodetector devices. As the result of comparing three types of device structures with one another, which are a global Schottky diode, local Schottky diode, and thin-film transistor (TFT), the IGZO TFT with the gate pulse technique suppressing the persistent photoconductivity (PPC) is the most promising photodetector in terms of a high photo-sensitivity and uniform sensing characteristic. In order to analyze the IGZO TFT-based photodetectors more quantitatively, the time-evolution of sub-gap density-of-states (DOS) was directly observed under photo-illumination and consecutively during the PPC-compensating period with applying the gate pulse. It shows that the increased ionized oxygen vacancy (VO2+) defects under photo-illumination was fully recovered by the positive gate pulse and even overcompensated by additional electron trapping. Based on experimentally extracted sub-gap DOS, the origin on PPC was successfully decomposed into the hole trapping and the VO ionization. Although the VO ionization is enhanced in lower OFR (O-poor) device, the PPC becomes more severe in high OFR (O-rich) device because the hole trapping dominates the PPC in IGZO TFT under photo-illumination rather than the VO ionization and more abundant holes are trapped into gate insulator and/or interface in O-rich TFTs. Similarly, the electron trapping during the PPC-compensating period with applying the positive gate pulse becomes more prominent in O-rich TFTs. It is attributed to more hole/electron traps in the gate insulator and/or interface, which is associated with oxygen interstitials, or originates from the ion bombardment-related lower quality gate oxide in O-rich devices.

VO2max and ventilatory threshold of trained cyclists are not affected by 28-day L-arginine supplementation.

PubMed

Sunderland, Kyle L; Greer, Felicia; Morales, Jacobo

2011-03-01

The ergogenic effect of L-arginine on an endurance-trained population is not well studied. The few studies that have investigated L-arginine on this population have not been conducted in a laboratory setting or measured aerobic variables. The purpose of the current study is to determine if 28 days of L-arginine supplementation in trained male cyclists affects VO2max and ventilatory threshold (VT). Eighteen (18) endurance-trained male cyclists (mean ± SD, age: 36.3 ± 7.9 years; height: 182.4 ± 4.6 cm; and body mass: 79.5 ± 4.7 kg) performed a graded exercise test (GXT; 50 W + 25 W·min) before and after 28 days of supplementation with L-arginine (ARG; 2 × 6 g·d) or placebo (PLA; cornstarch). The GXT was conducted on the subject's own bicycle using the RacerMate CompuTrainer (Seattle, WA, USA). VO2 was continuously recorded using the ParvoMedics TrueOne 2400 metabolic cart (Salt Lake City, UT, USA) and VT was established by plotting the ventilatory equivalent for O2 (VE/VO2) and the ventilatory equivalent for CO2 (VE/VCO2) and identifying the point at which VE/VO2 increases with no substantial changes in VE/VCO2. L-arginine supplementation had no effect from initial VO2max (PL, 58.7 ± 7.1 ml·kg·min; ARG, 63.5 ± 7.3 ml·kg·min) to postsupplement VO2max (PL, 58.9 ± 6.0 ml·kg·min; ARG, 63.2 ± 7.2 ml·kg·min). Also, no effect was seen from initial VT (PL, 75.7 ± 4.6% VO2max; ARG, 76.0 ± 5.3% VO2max) to postsupplement VT (PL, 74.3 ± 8.1% VO2max; ARG, 74.2 ± 6.4% VO2max). These results indicate that L-arginine does not impact VO2max or VT in trained male cyclists.

Praseodymium Cuprate Thin Film Cathodes for Intermediate Temperature Solid Oxide Fuel Cells: Roles of Doping, Orientation, and Crystal Structure.

PubMed

Mukherjee, Kunal; Hayamizu, Yoshiaki; Kim, Chang Sub; Kolchina, Liudmila M; Mazo, Galina N; Istomin, Sergey Ya; Bishop, Sean R; Tuller, Harry L

2016-12-21

Highly textured thin films of undoped, Ce-doped, and Sr-doped Pr 2 CuO 4 were synthesized on single crystal YSZ substrates using pulsed laser deposition to investigate their area-specific resistance (ASR) as cathodes in solid-oxide fuel cells (SOFCs). The effects of T' and T* crystal structures, donor and acceptor doping, and a-axis and c-axis orientation on ASR were systematically studied using electrochemical impedance spectroscopy on half cells. The addition of both Ce and Sr dopants resulted in improvements in ASR in c-axis oriented films, as did the T* crystal structure with the a-axis orientation. Pr 1.6 Sr 0.4 CuO 4 is identified as a potential cathode material with nearly an order of magnitude faster oxygen reduction reaction kinetics at 600 °C compared to thin films of the commonly studied cathode material La 0.6 Sr 0.4 Co 0.8 Fe 0.2 O 3-δ . Orientation control of the cuprate films on YSZ was achieved using seed layers, and the anisotropy in the ASR was found to be less than an order of magnitude. The rare-earth doped cuprate was found to be a versatile system for study of relationships between bulk properties and the oxygen reduction reaction, critical for improving SOFC performance.

CNC Turning Technician. A Competency-Based Instructional System.

ERIC Educational Resources Information Center

Sloan, Kelly; Hilley, Robert

This competency-based curriculum guide for instructing students in using computer numerically controlled (CNC) turning machines is one of a series of instructional guides for the machinist field developed in Oklahoma. Although developed jointly with Baxter Technologies Corporation and oriented toward the Baxter Vo-Tec 2000 Future Builder CNC…

VO2 /TiN Plasmonic Thermochromic Smart Coatings for Room-Temperature Applications.

PubMed

Hao, Qi; Li, Wan; Xu, Huiyan; Wang, Jiawei; Yin, Yin; Wang, Huaiyu; Ma, Libo; Ma, Fei; Jiang, Xuchuan; Schmidt, Oliver G; Chu, Paul K

2018-03-01

Vanadium dioxide/titanium nitride (VO 2 /TiN) smart coatings are prepared by hybridizing thermochromic VO 2 with plasmonic TiN nanoparticles. The VO 2 /TiN coatings can control infrared (IR) radiation dynamically in accordance with the ambient temperature and illumination intensity. It blocks IR light under strong illumination at 28 °C but is IR transparent under weak irradiation conditions or at a low temperature of 20 °C. The VO 2 /TiN coatings exhibit a good integral visible transmittance of up to 51% and excellent IR switching efficiency of 48% at 2000 nm. These unique advantages make VO 2 /TiN promising as smart energy-saving windows. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

End-exercise ΔHHb/ΔVO2 and post-exercise local oxygen availability in relation to exercise intensity.

PubMed

Stöcker, F; Von Oldershausen, C; Paternoster, F K; Schulz, T; Oberhoffer, R

2017-07-01

Increased local blood supply is thought to be one of the mechanisms underlying oxidative adaptations to interval training regimes. The relationship of exercise intensity with local blood supply and oxygen availability has not been sufficiently evaluated yet. The aim of this study was to examine the effect of six different intensities (40-90% peak oxygen uptake, VO 2peak ) on relative changes in oxygenated, deoxygenated and total haemoglobin (ΔO 2 Hb, ΔHHb, ΔTHb) concentration after exercise as well as end-exercise ΔHHb/ΔVO 2 as a marker for microvascular O 2 distribution. Seventeen male subjects performed an experimental protocol consisting of 3 min cycling bouts at each exercise intensity in randomized order, separated by 5 min rests. ΔO 2 Hb and ΔHHb were monitored with near-infrared spectroscopy of the vastus lateralis muscle, and VO 2 was assessed. ΔHHb/ΔVO 2 increased significantly from 40% to 60% VO 2 peak and decreased from 60% to 90% VO 2 peak. Post-exercise ΔTHb and ΔO 2 Hb showed an overshoot in relation to pre-exercise values, which was equal after 40-60% VO 2peak and rose significantly thereafter. A plateau was reached following exercise at ≥80% VO 2peak . The results suggest that there is an increasing mismatch of local O 2 delivery and utilization during exercise up to 60% VO 2peak . This insufficient local O 2 distribution is progressively improved above that intensity. Further, exercise intensities of ≥80% VO 2peak induce highest local post-exercise O 2 availability. These effects are likely due to improved microvascular perfusion by enhanced vasodilation, which could be mediated by higher lactate production and the accompanying acidosis. © 2015 Scandinavian Society of Clinical Physiology and Nuclear Medicine. Published by John Wiley & Sons Ltd.

Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer

NASA Astrophysics Data System (ADS)

Thao, Pham Ngoc; Yoshida, Shinya; Tanaka, Shuji

2017-12-01

This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7 µm, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ˜250 as a dielectric constants ɛr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.

Structure evolution of zinc oxide thin films deposited by unbalance DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aryanto, Didik, E-mail: didi027@lipi.go.id; Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah; Marwoto, Putut

Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 °C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtainedmore » at growth temperature of 400 °C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.« less

Chemical composition of an aqueous oxalato-/citrato-VO(2+) solution as determinant for vanadium oxide phase formation.

PubMed

Peys, Nick; Maurelli, Sara; Reekmans, Gunter; Adriaensens, Peter; De Gendt, Stefan; Hardy, An; Van Doorslaer, Sabine; Van Bael, Marlies K

2015-01-05

Aqueous solutions of oxalato- and citrato-VO(2+) complexes are prepared, and their ligand exchange reaction is investigated as a function of the amount of citrate present in the aqueous solution via continuous-wave electron paramagnetic resonance (CW EPR) and hyperfine sublevel correlation (HYSCORE) spectroscopy. With a low amount of citrate, monomeric cis-oxalato-VO(2+) complexes occur with a distorted square-pyramidal geometry. As the amount of citrate increases, oxalate is gradually exchanged for citrate. This leads to (i) an intermediate situation of monomeric VO(2+) complexes with a mix of oxalate/citrate ligands and (ii) a final situation of both monomeric and dimeric complexes with exclusively citrato ligands. The monomeric citrato-VO(2+) complexes dominate (abundance > 80%) and are characterized by a 6-fold chelation of the vanadium(IV) ion by 4 RCO2(-) ligands at the equatorial positions and a H2O/R-OH ligand at the axial position. The different redox stabilities of these complexes, relative to that of dissolved O2 in the aqueous solution, is analyzed via (51)V NMR. It is shown that the oxidation rate is the highest for the oxalato-VO(2+) complexes. In addition, the stability of the VO(2+) complexes can be drastically improved by evacuation of the dissolved O2 from the solution and subsequent storage in a N2 ambient atmosphere. The vanadium oxide phase formation process, starting with the chemical solution deposition of the aqueous solutions and continuing with subsequent processing in an ambient 0.1% O2 atmosphere, differs for the two complexes. The oxalato-VO(2+) complexes turn into the oxygen-deficient crystalline VO2 B at 400 °C, which then turns into crystalline V6O13 at 500 °C. In contrast, the citrato-VO(2+) complexes form an amorphous film at 400 °C that crystallizes into VO2 M1 and V6O13 at 500 °C.

Spanish genetic admixture is associated with larger V(O2) max decrement from sea level to 4338 m in Peruvian Quechua.

PubMed

Brutsaert, Tom D; Parra, Esteban J; Shriver, Mark D; Gamboa, Alfredo; Palacios, Jose-Antonio; Rivera, Maria; Rodriguez, Ivette; León-Velarde, Fabiola

2003-08-01

Quechua in the Andes may be genetically adapted to altitude and able to resist decrements in maximal O2 consumption in hypoxia (DeltaVo2 max). This hypothesis was tested via repeated measures of Vo2 max (sea level vs. 4338 m) in 30 men of mixed Spanish and Quechua origins. Individual genetic admixture level (%Spanish ancestry) was estimated by using ancestry-informative DNA markers. Genetic admixture explained a significant proportion of the variability in DeltaVo2 max after control for covariate effects, including sea level Vo2 max and the decrement in arterial O2 saturation measured at Vo2 max (DeltaSpO2 max) (R2 for admixture and covariate effects approximately 0.80). The genetic effect reflected a main effect of admixture on DeltaVo2 max (P = 0.041) and an interaction between admixture and DeltaSpO2 max (P = 0.018). Admixture predicted DeltaVo2 max only in subjects with a large DeltaSpO2 max (P = 0.031). In such subjects, DeltaVo2 max was 12-18% larger in a subgroup of subjects with high vs. low Spanish ancestry, with least squares mean values (+/-SE) of 739 +/- 71 vs. 606 +/- 68 ml/min, respectively. A trend for interaction (P = 0.095) was also noted between admixture and the decrease in ventilatory threshold at 4338 m. As previously, admixture predicted DeltaVo2 max only in subjects with a large decrease in ventilatory threshold. These findings suggest that the genetic effect on DeltaVo2 max depends on a subject's aerobic fitness. Genetic effects may be more important (or easier to detect) in athletic subjects who are more likely to show gas-exchange impairment during exercise. The results of this study are consistent with the evolutionary hypothesis and point to a better gas-exchange system in Quechua.

Prediction of Maximal Oxygen Uptake by Six-Minute Walk Test and Body Mass Index in Healthy Boys.

PubMed

Jalili, Majid; Nazem, Farzad; Sazvar, Akbar; Ranjbar, Kamal

2018-05-14

To develop an equation to predict maximal oxygen uptake (VO2max) based on the 6-minute walk test (6MWT) and body composition in healthy boys. Direct VO2max, 6-minute walk distance, and anthropometric characteristics were measured in 349 healthy boys (12.49 ± 2.72 years). Multiple regression analysis was used to generate VO2max prediction equations. Cross-validation of the VO2max prediction equations was assessed with predicted residual sum of squares statistics. Pearson correlation was used to assess the correlation between measured and predicted VO2max. Objectively measured VO2max had a significant correlation with demographic and 6MWT characteristics (R = 0.11-0.723, P < .01). Multiple regression analysis revealed the following VO2max prediction equation: VO2max (mL/kg/min) = 12.701 + (0.06 × 6-minute walk distance m ) - (0.732 × body mass index kg/m2 ) (R 2 = 0.79, standard error of the estimate [SEE] = 2.91 mL/kg/min, %SEE = 6.9%). There was strong correlation between measured and predicted VO2max (r = 0.875, P < .001). Cross-validation revealed minimal shrinkage (R 2 p = 0.78 and predicted residual sum of squares SEE = 2.99 mL/kg/min). This study provides a relatively accurate and convenient VO2max prediction equation based on the 6MWT and body mass index in healthy boys. This model can be used for evaluation of cardiorespiratory fitness of boys in different settings. Copyright © 2018 Elsevier Inc. All rights reserved.

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

PubMed Central

2013-01-01

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques. PMID:23448090

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate.

PubMed

Wei, Xianqi; Zhao, Ranran; Shao, Minghui; Xu, Xijin; Huang, Jinzhao

2013-02-28

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.

Shape-controlled synthesis and influence of W doping and oxygen nonstoichiometry on the phase transition of VO2

PubMed Central

Chen, Ru; Miao, Lei; Liu, Chengyan; Zhou, Jianhua; Cheng, Haoliang; Asaka, Toru; Iwamoto, Yuji; Tanemura, Sakae

2015-01-01

Monoclinic VO2(M) in nanostructure is a prototype material for interpreting correlation effects in solids with fully reversible phase transition and for the advanced applications to smart devices. Here, we report a facile one-step hydrothermal method for the controlled growth of single crystalline VO2(M/R) nanorods. Through tuning the hydrothermal temperature, duration of the hydrothermal time and W-doped level, single crystalline VO2(M/R) nanorods with controlled aspect ratio can be synthesized in large quantities, and the crucial parameter for the shape-controlled synthesis is the W-doped content. The dopant greatly promotes the preferential growth of (110) to form pure phase VO2(R) nanorods with high aspect ratio for the W-doped level = 2.0 at% sample. The shape-controlled process of VO2(M/R) nanorods upon W-doping are systematically studied. Moreover, the phase transition temperature (Tc) of VO2 depending on oxygen nonstoichiometry is investigated in detail. PMID:26373612

The alveolar to arterial oxygen partial pressure difference is associated with pulmonary diffusing capacity in heart failure patients.

PubMed

Morosin, Marco; Vignati, Carlo; Novi, Angela; Salvioni, Elisabetta; Veglia, Fabrizio; Alimento, Marina; Merli, Guido; Sciomer, Susanna; Sinagra, Gianfranco; Agostoni, Piergiuseppe

2016-11-01

In chronic heart failure (HF), the alveolar-capillary membrane undergoes a remodeling process that negatively affects gas exchange. In case of alveolar-capillary gas diffusion impairment, arterial desaturation (SaO 2 ) is rarely observed in HF patients. At play are 3 factors: overall pulmonary diffusing capacity (assessed as lung diffusion for CO, DLCO), global O 2 consumption (VO 2 ) and alveolar (A) to arterial (a) pO 2 gradient (AaDO 2 ). In 100 consecutive stable HF patients, DLCO, resting respiratory gases and arterial blood gases were measured to determine VO 2, paO 2 , pAO 2 and AaDO 2 . DLCO was poorly but significantly related to AaDO 2 . The correlation improved after correcting AaDO 2 for VO 2 (p<0.001, r=0.49). Both VO 2 and AaDO 2 were independently associated with DLCO (p<0.001). Patients with reduced DLCO showed no differences as regards paO 2 and pAO 2 . AaDO 2 /VO 2 showed a higher gradient in patients with lower DLCO. AaDO 2 increase and VO 2 reduction allow preventing low SaO 2 in HF patients with reduced DLCO. Accordingly, we suggest considering AaDO 2 and VO 2 combined and reporting AaDO 2 /VO 2 . Copyright © 2016 Elsevier B.V. All rights reserved.

Time limit and VO2 slow component at intensities corresponding to VO2max in swimmers.

PubMed

Fernandes, R J; Cardoso, C S; Soares, S M; Ascensão, A; Colaço, P J; Vilas-Boas, J P

2003-11-01

The purpose of this study was to measure, in swimming pool conditions and with high level swimmers, the time to exhaustion at the minimum velocity that elicits maximal oxygen consumption (TLim at vVO(2)max), and the corresponding VO(2) slow component (O(2)SC). The vVO(2)max was determined through an intermittent incremental test (n = 15). Forty-eight hours later, TLim was assessed using an all-out swim at vVO(2)max until exhaustion. VO(2) was measured through direct oximetry and the swimming velocity was controlled using a visual light-pacer. Blood lactate concentrations and heart rate values were also measured. Mean VO(2)max for the incremental test was 5.09 +/- 0.53 l/min and the corresponding vVO(2)max was 1.46 +/- 0.06 m/s. Mean TLim value was 260.20 +/- 60.73 s and it was inversely correlated with the velocity of anaerobic threshold (r = -0.54, p < 0.05). This fact, associated with the inverse relationship between TLim and vVO(2)max (r = -0.47, but only for p < 0.10), suggested that swimmers' lower level aerobic metabolic rate might be associated with a larger capacity to sustain that exercise intensity. O(2)SC reached 274.11 +/- 152.83 l/min and was correlated with TLim (r = 0.54), increased ventilation in TLim test (r = 0.52) and energy cost of the respiratory muscles (r = 0.51), for p < 0.05. These data suggest that O(2)SC was also observed in the swimming pool, in high level swimmers performing at vVO(2)max, and that higher TLim seems to correspond to higher expected O(2)SC amplitude. These findings seem to bring new data with application in middle distance swimming.

Relationship between inflammatory markers of cardiovascular disease and VO2peak in asymptomatic females.

PubMed

Omran Simin, F; Narges, Z; Sajad, A; Parisa, Y; Omrani Vahid, F

2013-04-01

The objective of this study was to investigate the relationship between inflammatory markers of cardiovascular disease (IL-6 and acute-phase reactants) and VO2peak in asymptomatic females. Study subjects were females not affected by coronary heart diseases. Forty healthy female subjects (age, 45±4.2 years; height, 161±3.5 cm; weight, 65±3.1 kg; history of regular physical activity, 5.2±0.45 years) participated in this study Analysis of data was carried out by Pearson's correlation. Statistical analysis of data indicated a negative significant relationship between IL-6 and VO2peak (r=-0.48, r2=0.23, P<0.048), CRP and VO2peak (r=-0.40, r2= 0.16, P<0.002), fibrinogen and VO2peak (r=-0.42, r2=0.17, P<0.001), and WBC and VO2peak (r=-0.22, r2=0.04, P<0.044). In conclusion higher circulating levels of IL-6, CRP and fibrinogen are associated with lower VO2peak in females.

Physiological response to the 6-minute walk test in chronic heart failure patients versus healthy control subjects.

PubMed

Deboeck, Gaël; Van Muylem, Alain; Vachiéry, Jean Luc; Naeije, Robert

2014-08-01

The distance walked in 6 minutes (6MWD) has been reported to be linearly related to peak oxygen uptake (VO2) in cardiac diseases and in lung diseases. In these patients, the VO2 during a 6-min walk test (walkVO2) has been found to be nearly equivalent to peakVO2, but with a lower respiratory exchange ratio (RER). Whether these observations translate to the less functionally impaired patients or healthy control subjects is not exactly known. Thirty-two healthy control subjects and 15 chronic heart failure (CHF) patients performed a 6-min walk test and a maximal cardiopulmonary exercise test (CPET) both with measurements of gas exchange. The 6MWD and peakVO2 were linearly correlated, but with an increased slope appearing above 532 m. In CHF patients, walkVO2 was similar to peakVO2, but with lower heart rate and ventilation than measured at peak exercise. In healthy control subjects, VO2, ventilation and heart rate were lower during the 6-min walk than at maximal exercise but higher than at the anaerobic threshold. The RER during the 6-min walk remained <1 in both groups. Above 500 m, 6MWD becomes less sensitive to any increase in peakVO2. Furthermore, CHF patients and healthy control subjects exercise respectively at maximal and high VO2, but below the anaerobic threshold (as assessed by a CPET) during the 6-min walk test. © The European Society of Cardiology 2013 Reprints and permissions: sagepub.co.uk/journalsPermissions.nav.

Lung function parameters improve prediction of VO2peak in an elderly population: The Generation 100 study.

PubMed

Hassel, Erlend; Stensvold, Dorthe; Halvorsen, Thomas; Wisløff, Ulrik; Langhammer, Arnulf; Steinshamn, Sigurd

2017-01-01

Peak oxygen uptake (VO2peak) is an indicator of cardiovascular health and a useful tool for risk stratification. Direct measurement of VO2peak is resource-demanding and may be contraindicated. There exist several non-exercise models to estimate VO2peak that utilize easily obtainable health parameters, but none of them includes lung function measures or hemoglobin concentrations. We aimed to test whether addition of these parameters could improve prediction of VO2peak compared to an established model that includes age, waist circumference, self-reported physical activity and resting heart rate. We included 1431 subjects aged 69-77 years that completed a laboratory test of VO2peak, spirometry, and a gas diffusion test. Prediction models for VO2peak were developed with multiple linear regression, and goodness of fit was evaluated. Forced expiratory volume in one second (FEV1), diffusing capacity of the lung for carbon monoxide and blood hemoglobin concentration significantly improved the ability of the established model to predict VO2peak. The explained variance of the model increased from 31% to 48% for men and from 32% to 38% for women (p<0.001). FEV1, diffusing capacity of the lungs for carbon monoxide and hemoglobin concentration substantially improved the accuracy of VO2peak prediction when added to an established model in an elderly population.

Removing the thermal component from heart rate provides an accurate VO2 estimation in forest work.

PubMed

Dubé, Philippe-Antoine; Imbeau, Daniel; Dubeau, Denise; Lebel, Luc; Kolus, Ahmet

2016-05-01

Heart rate (HR) was monitored continuously in 41 forest workers performing brushcutting or tree planting work. 10-min seated rest periods were imposed during the workday to estimate the HR thermal component (ΔHRT) per Vogt et al. (1970, 1973). VO2 was measured using a portable gas analyzer during a morning submaximal step-test conducted at the work site, during a work bout over the course of the day (range: 9-74 min), and during an ensuing 10-min rest pause taken at the worksite. The VO2 estimated, from measured HR and from corrected HR (thermal component removed), were compared to VO2 measured during work and rest. Varied levels of HR thermal component (ΔHRTavg range: 0-38 bpm) originating from a wide range of ambient thermal conditions, thermal clothing insulation worn, and physical load exerted during work were observed. Using raw HR significantly overestimated measured work VO2 by 30% on average (range: 1%-64%). 74% of VO2 prediction error variance was explained by the HR thermal component. VO2 estimated from corrected HR, was not statistically different from measured VO2. Work VO2 can be estimated accurately in the presence of thermal stress using Vogt et al.'s method, which can be implemented easily by the practitioner with inexpensive instruments. Copyright © 2015 Elsevier Ltd and The Ergonomics Society. All rights reserved.

Hydrothermal Synthesis of VO2 Polymorphs: Advantages, Challenges and Prospects for the Application of Energy Efficient Smart Windows.

PubMed

Li, Ming; Magdassi, Shlomo; Gao, Yanfeng; Long, Yi

2017-09-01

Vanadium dioxide (VO 2 ) is a widely studied inorganic phase change material, which has a reversible phase transition from semiconducting monoclinic to metallic rutile phase at a critical temperature of τ c ≈ 68 °C. The abrupt decrease of infrared transmittance in the metallic phase makes VO 2 a potential candidate for thermochromic energy efficient windows to cut down building energy consumption. However, there are three long-standing issues that hindered its application in energy efficient windows: high τ c , low luminous transmittance (T lum ), and undesirable solar modulation ability (ΔT sol ). Many approaches, including nano-thermochromism, porous films, biomimetic surface reconstruction, gridded structures, antireflective overcoatings, etc, have been proposed to tackle these issues. The first approach-nano-thermochromism-which is to integrate VO 2 nanoparticles in a transparent matrix, outperforms the rest; while the thermochromic performance is determined by particle size, stoichiometry, and crystallinity. A hydrothermal method is the most common method to fabricate high-quality VO 2 nanoparticles, and has its own advantages of large-scale synthesis and precise phase control of VO 2 . This Review focuses on hydrothermal synthesis, physical properties of VO 2 polymorphs, and their transformation to thermochromic VO 2 (M), and discusses the advantages, challenges, and prospects of VO 2 (M) in energy-efficient smart windows application. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Facile Approach to Preparing a Vanadium Oxide Hydrate Layer as a Hole-Transport Layer for High-Performance Polymer Solar Cells.

PubMed

Cong, Hailin; Han, Dongwei; Sun, Bingbing; Zhou, Dongying; Wang, Chen; Liu, Ping; Feng, Lai

2017-05-31

We demonstrate a facile and green approach to preparing a vanadium oxide hydrate (VO x ·nH 2 O) layer to serve as the hole-transport layer (HTL) in high-performance polymer solar cells (PSCs). The VO x ·nH 2 O layer was in situ prepared by a combined H 2 O 2 and ultraviolet-ozone (UVO) processing on a VO x layer. The as-prepared VO x ·nH 2 O layer featured a work function of 5.0 ± 0.1 eV, high transmittance, and better interface properties compared to those of the generally prepared VO x (UVO or thermal annealing) layers. PSCs based on poly[(ethylhexyl-thiophenyl)-benzodithiophene-(ethylhexyl)-thienothiophene]/[6,6]-phenyl-C 71 -butyric acid methyl ester using the VO x ·nH 2 O layer as the HTL yielded high power conversion efficiencies (PCEs) up to 8.11%, outperforming the devices with VO x layers (PCE of 6.79% for the UVO-processed VO x layer and 6.10% for the thermally annealed VO x layer) and conventional polyethylenedioxythiophene-polystyrenesulfonate (PEDOT:PSS) layers (PCE of 7.67%). The improved PCE was attributed to the enhanced J SC and/or fill factor, which mainly correlate to the improved interfacial contact between the photoactive layer and the indium tin oxide/HTL or cathode when using the VO x ·nH 2 O layer as the HTL. A similar improvement in the PCE was also observed for the PSCs based on poly(3-hexylthiophene)/[6,6]-phenyl-C 61 -butyric acid methyl ester. In addition, PSCs with a VO x ·nH 2 O layer as the HTL showed a higher stability than that of those with a PEDOT:PSS layer. Hence, it would be possible to use this simply and in situ prepared VO x ·nH 2 O layer as an inexpensive HTL for high-performance PSCs.

Min-By-Min Respiratory Exchange and Oxygen Uptake Kinetics During Steady-State Exercise in Subjects of High and Low Max VO2

ERIC Educational Resources Information Center

Weltman, Arthur; Katch, Victor

1976-01-01

No statistically meaningful differences in steady-state vo2 uptake for high and low max vo2 groups was indicated in this study, but a clear tendency was observed for the high max vo2 group to reach the steady-state at a faster rate. (MB)

Determinants of Exercise Intolerance in Elderly Heart Failure Patients with Preserved Ejection Fraction

PubMed Central

Haykowsky, Mark J.; Brubaker, Peter H.; John, Jerry M.; Stewart, Kathryn P.; Morgan, Timothy M.; Kitzman, Dalane W.

2011-01-01

Objectives To determine the mechanisms responsible for reduced aerobic capacity (peak VO2) in heart failure patients with preserved ejection fraction (HFPEF). Background HFPEF is the predominant form of HF in older persons. Exercise intolerance is the primary symptom among patients with HFPEF and a major determinant of reduced quality of life. In contrast to patients with HF and reduced EF, the mechanism of exercise intolerance in HFPEF is less well understood. Methods Left ventricular volumes (2D echocardiography), cardiac output (CO), VO2 and calculated arterial-venous oxygen content difference (A-VO2 Diff) were measured at rest and during incremental, exhaustive upright cycle exercise in 48 HFPEF patients (age 69±6 years) and 25 healthy age-matched controls (HC). Results In HFPEF compared to HC, VO2 was reduced at peak exercise (mean±SE: 14.3±0.5 vs. 20.4±0.6 mL·kg min−1; p<0.0001) and was associated with a reduced peak CO (6.3±0.2 vs. 7.6±0.2 L·min−1, p<0.0001) and A-VO2 Diff (17±0.4 vs. 19±0.4 ml·dl−1, p<0.0007). The strongest independent predictor of peak VO2 was the change in A-VO2 Diff from rest to peak exercise (A-VO2 Diff reserve) for both HFPEF (partial correlant 0.58, standardized β coefficient 0.66; p=0.0002) and HC (partial correlant 0.61, standardized β coefficient 0.41; p=0.005) Conclusions Both reduced CO and A-VO2 Diff contribute significantly to the severe exercise intolerance in elderly HFPEF patients. The finding that A-VO2 Diff reserve is an independent predictor of peak exercise VO2 suggests that peripheral, ‘non-cardiac’ factors are important contributors to exercise intolerance in these patients. PMID:21737017

Changes in ventilatory threshold with exercise training in a sedentary population: the HERITAGE Family Study.

PubMed

Gaskill, S E; Walker, A J; Serfass, R A; Bouchard, C; Gagnon, J; Rao, D C; Skinner, J S; Wilmore, J H; Leon, A S

2001-11-01

The purpose of this study was to evaluate the effect of exercise training intensity relative to the ventilatory threshold (VT) on changes in work (watts) and VO2 at the ventilatory threshold and at maximal exercise in previously sedentary participants in the HERITAGE Family Study. We hypothesized that those who exercised below their VT would improve less in VO2 at the ventilatory threshold (VO2vt) and VO2max than those who trained at an intensity greater than their VT. Supervised cycle ergometer training was performed at the 4 participating clinical centers, 3 times a week for 20 weeks. Exercise training progressed from the HR corresponding to 55% VO2max for 30 minutes to the HR associated with 75% VO2max for 50 minutes for the final 6 weeks. VT was determined at baseline and after exercise training using standardized methods. 432 sedentary white and black men (n = 224) and women (n = 208), aged 17 to 65 years, were retrospectively divided into groups based on whether exercise training was initiated below, at, or above VT. 1) Training intensity (relative to VT) accounting for about 26% of the improvement in VO2vt (R2 = 0.26, p < 0.0001). 2) The absolute intensity of training in watts (W) accounted for approximately 56% of the training effect at VT (R2 = 0.56, p < 0.0001) with post-training watts at VT (VT(watts)) being not significantly different than W during training (p > 0.70). 3) Training intensity (relative to VT) had no effect on DeltaVO2max. These data clearly show that as a result of aerobic training both the VO2 and W associated with VT respond and become similar to the absolute intensity of sustained (3 x /week for 50 min) aerobic exercise training. Higher intensities of exercise, relative to VT, result in larger gains in VO2vt but not in VO2max.

Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective

NASA Astrophysics Data System (ADS)

Londos, C. A.; Sgourou, E. N.; Chroneos, A.

2012-12-01

Infrared spectroscopy was used to study the production and evolution of oxygen-vacancy (VOn for n = 1, 2, 3 and VmO for m = 1, 2, 3) clusters, in electron-irradiated Czochralski silicon (Cz-Si) samples, doped with isovalent dopants. It was determined that the production of the VO pair is enhanced in Ge-doped Si but is suppressed in Sn and Pb-doped Si. The phenomenon is discussed in terms of the competition between isovalent dopants and oxygen atoms in capturing vacancies in the course of irradiation. In the case of Ge, only transient GeV pairs form, leading finally to an increase of the VO production. Conversely, for Sn and Pb the corresponding pairs with vacancies are stable, having an opposite impact on the formation of VO pairs. Regarding V2O and V3O clusters, our measurements indicate that Ge doping enhances their formation, although Sn and Pb dopants suppress it. Similar arguments as those for the VO pair could be put forward, based on the effect of isovalent impurities on the availability of vacancies. Additionally, it was found that the conversion ratio of VO to VO2 decreases as the covalent radius of the isovalent dopant increases. These results are discussed in terms of the local strains introduced by the isovalent dopants in the Si lattice. These local strains affect the balance of the intrinsic defects created as a result of irradiation, as well as the balance between the two main reactions (VO + Oi → VO2 and VO + SiI → Oi) participating in the VO annealing, leading finally to a decrease of the VO2 production. The larger the covalent radius of the isovalent dopant (rGe < rSn < rPb), the larger the introduced strains in the lattice and then the less the VO2 formation in accordance with our experimental results. Interestingly, an opposite trend was observed for the conversion ratio of VO2 to VO3. The phenomenon is attributed to the enhanced diffusivity of oxygen impurity as a result of the presence of isovalent dopants, leading to an enhanced formation of the VO3 cluster. The results indicate that isovalent doping of Si is an effective way to control the formation of the deleterious oxygen-vacancy clustering that can affect Si-based devices.

Contribution of central and peripheral factors at peak exercise in heart failure patients with progressive severity of exercise limitation.

PubMed

Del Torto, Alberico; Corrieri, Nicoletta; Vignati, Carlo; Gentile, Piero; Cattadori, Gaia; Paolillo, Stefania; Agostoni, Piergiuseppe

2017-12-01

A reduced cardiac output (CO) response during exercise is a major limiting factor in heart failure (HF). Oxygen consumption (VO 2 ) is directly proportional to CO. Peripheral mechanisms via arteriovenous oxygen difference (Δ(a-v)O 2 ) play a pivotal role in chronic HF. We hypothesized a weak correlation between peak VO 2 and peak CO with a greater Δ(a-v)O 2 variability in most severe HF. We analyzed 278 HF patients (NYHA II-III) who performed maximal cardiopulmonary exercise test with non-invasive CO measurement by inert gas rebreathing. Median peakVO 2 , CO and Δ(a-v)O 2 were 0.96 (0.78-1.28) L/min, 6.3 (5.1-8.0) L/min and 16.0 (14.2-18.0) mL/100mL respectively, with a linear relationship between VO 2 and CO: CO=5.3×VO 2 +1.13 (r 2 =0.705, p<0.001). Patients were grouped according to exercise limitation. Group 1 (101 patients) peakVO 2 <50% pred: peakVO 2 0.80 (0.67-0.94) L/min, peakCO 5.6 (4.7-6.5) L/min, peakΔ(a-v)O 2 14.8 (12.9-17.1) mL/100mL. Group 2 (89 patients) peakVO 2 ≥50-<65% pred: peakVO 2 1.02 (0.84-1.29) L/min, peakCO 6.4 (5.1-8.0) L/min, peakΔ(a-v)O 2 16.7 (15.0-18.5) mL/100mL. Group 3 (88 patients) peakVO 2 ≥65% pred: peakVO 2 1.28 (0.93-1.66) L/min, peakCO 8.0 (6.2-9.7) L/min, peakΔ(a-v)O 2 16.8 (14.6-18.3) mL/100mL. A peakVO 2 and peakCO linear relationship was observed in Group 1 (r 2 =0.381, p<0.001), Group 2 (r 2 =0.756, p<0.001) and Group 3 (r 2 =0.744, p<0.001). With worsening HF we observed a progressive reduction of peak CO and peak VO 2 . However in most compromised patients also peripheral mechanisms play a role as indicated by reduced Δ(a-v)O 2 . Copyright © 2017 Elsevier B.V. All rights reserved.

Stratification in the lunar regolith - A preliminary view

NASA Technical Reports Server (NTRS)

Duke, M. B.; Nagle, J. S.

1975-01-01

Although our knowledge of lunar regolith stratification is incomplete, several categories of thick and thin strata have been identified. Relatively thick units average 2 to 3 cm in thickness, and appear surficially to be massive. On more detailed examination, these units can be uniformly fine-grained, can show internal trends, or can show internal variations which apparently are random. Other thick units contain soil clasts apparently reworked from underlying units. Thin laminae average approximately 1 mm in thickness; lenticular distribution and composition of some thin laminae indicates that they are fillets shed from adjacent rock fragments. Other dark fine-grained well-sorted thin laminae appear to be surficial zones reworked by micrometeorites. Interpretations of stratigraphic succession can be strengthened by the occurrence of characteristic coarse rock fragments and the orientation of large spatter agglutinates, which are commonly found in their original depositional orientation.

Heart rate during basketball game play and volleyball drills accurately predicts oxygen uptake and energy expenditure.

PubMed

Scribbans, T D; Berg, K; Narazaki, K; Janssen, I; Gurd, B J

2015-09-01

There is currently little information regarding the ability of metabolic prediction equations to accurately predict oxygen uptake and exercise intensity from heart rate (HR) during intermittent sport. The purpose of the present study was to develop and, cross-validate equations appropriate for accurately predicting oxygen cost (VO2) and energy expenditure from HR during intermittent sport participation. Eleven healthy adult males (19.9±1.1yrs) were recruited to establish the relationship between %VO2peak and %HRmax during low-intensity steady state endurance (END), moderate-intensity interval (MOD) and high intensity-interval exercise (HI), as performed on a cycle ergometer. Three equations (END, MOD, and HI) for predicting %VO2peak based on %HRmax were developed. HR and VO2 were directly measured during basketball games (6 male, 20.8±1.0 yrs; 6 female, 20.0±1.3yrs) and volleyball drills (12 female; 20.8±1.0yrs). Comparisons were made between measured and predicted VO2 and energy expenditure using the 3 equations developed and 2 previously published equations. The END and MOD equations accurately predicted VO2 and energy expenditure, while the HI equation underestimated, and the previously published equations systematically overestimated VO2 and energy expenditure. Intermittent sport VO2 and energy expenditure can be accurately predicted from heart rate data using either the END (%VO2peak=%HRmax x 1.008-17.17) or MOD (%VO2peak=%HRmax x 1.2-32) equations. These 2 simple equations provide an accessible and cost-effective method for accurate estimation of exercise intensity and energy expenditure during intermittent sport.

The preparation of a plasmonically resonant VO2 thermochromic pigment.

PubMed

Bai, Huaping; Cortie, Michael B; Maaroof, Abbas I; Dowd, Annette; Kealley, Catherine; Smith, Geoffrey B

2009-02-25

Vanadium dioxide (VO(2)) undergoes a reversible metal-insulator transition, normally at approximately 68 degrees C. While the properties of continuous semi-transparent coatings of VO(2) are well known, there is far less information available concerning the potential use of discrete VO(2) nanoparticles as a thermochromic pigment in opaque coatings. Individual VO(2) nanoparticles undergo a localized plasmon resonance with near-infrared light at about 1100 nm and this resonance can be switched on and off by simply varying the temperature of the system. Therefore, incorporation of VO(2) nanoparticles into a coating system imbues the coating with the ability to self-adaptively modulate its own absorptive efficiency in the near-infrared. Here we examine the magnitude and control of this phenomenon. Prototype coatings are described, made using VO(2) powder produced by an improved process. The materials are characterized using calorimetry, x-ray diffraction, high-resolution scanning electron microscopy, transmission electron microscopy, and by measurement of optical properties.

Tailoring of the thermomechanical performance of VO2 nanowire bimorph actuators by ion implantation

NASA Astrophysics Data System (ADS)

Karl, H.; Peyinghaus, S. C.

2015-12-01

Vanadium dioxide VO2 nanowire bimorph actuators work on the basis of the large abrupt length change at the metal-insulator phase transition (MIT). A key parameter for the bimorph performance and efficiency is the bending curvature and the width of the temperature hysteresis of the MIT which is inherently large for single domain VO2 metal side coated nanowires. In this work we present single-clamped Ir side coated VO2 bimorphs which show unprecedented high bending curvatures of up to 105 m-1 and new type of side ion-implanted VO2 nanowire bimorph actuators with a nearly completely suppressed temperature hysteresis. It is assumed that ion-beam induced radiation defects in the VO2 crystal structure act as nucleation sites for the MIT. Moreover it will be shown that mechanical strain intentionally built-in during VO2 nanowire bimorph fabrication allows to direct phase transformation via a strain stabilized metastable phase and thus allows to control bending response on temperature change.

The Effect of Film Composition on the Texture and Grain Size of CuInS2 Prepared by Spray Pyrolysis

NASA Technical Reports Server (NTRS)

Jin, Michael H.; Banger, Kulinder K.; Harris, Jerry D.; Hepp, Aloysius F.

2003-01-01

Ternary single-source precursors were used to deposit CuInS2 thin films using chemical spray pyrolysis. We investigated the effect of the film composition on texture, secondary phase formation, and grain size. As-grown films were most often In-rich. They became more (204/220)-oriented as indium concentration increased, and always contained a yet unidentified secondary phase. The (112)-prefened orientation became more pronounced as the film composition became more Cu-rich. The secondary phase was determined to be an In-rich compound based on composition analysis and Raman spectroscopy. In addition, as-grown Cu-rich (112)-oriented films did not exhibit the In-rich compound. Depositing a thin Cu layer prior to the growth of CuInS2 increased the maximum grain size from - 0.5 micron to - 1 micron, and prevented the formation of the In-rich secondary phase.

Tunable electrical conductivity in oriented thin films of tetrathiafulvalene-based covalent organic framework

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, SL; Zhang, YB; Pun, AB

2014-09-16

Despite the high charge-carrier mobility in covalent organic frameworks (COFs), the low intrinsic conductivity and poor solution processability still impose a great challenge for their applications in flexible electronics. We report the growth of oriented thin films of a tetrathiafulvalene-based COF (TTF-COF) and its tunable doping. The porous structure of the crystalline TTF-COF thin film allows the diffusion of dopants such as I-2 and tetracyanoquinodimethane (TCNQ) for redox reactions, while the closely packed 2D grid sheets facilitate the cross-layer delocalization of thus-formed TTF radical cations to generate more conductive mixed-valence TTF species, as is verified by UV-vis-NIR and electron paramagneticmore » resonance spectra. Conductivity as high as 0.28 S m(-1) is observed for the doped COF thin films, which is three orders of magnitude higher than that of the pristine film and is among the highest for COF materials.« less

VO2/TiO2 Nanosponges as Binder-Free Electrodes for High-Performance Supercapacitors

NASA Astrophysics Data System (ADS)

Hu, Chenchen; Xu, Henghui; Liu, Xiaoxiao; Zou, Feng; Qie, Long; Huang, Yunhui; Hu, Xianluo

2015-11-01

VO2/TiO2 nanosponges with easily tailored nanoarchitectures and composition were synthesized by electrostatic spray deposition as binder-free electrodes for supercapacitors. Benefiting from the unique interconnected pore network of the VO2/TiO2 electrodes and the synergistic effect of high-capacity VO2 and stable TiO2, the as-formed binder-free VO2/TiO2 electrode exhibits a high capacity of 86.2 mF cm-2 (~548 F g-1) and satisfactory cyclability with 84.3% retention after 1000 cycles. This work offers an effective and facile strategy for fabricating additive-free composites as high-performance electrodes for supercapacitors.

VO2/TiO2 Nanosponges as Binder-Free Electrodes for High-Performance Supercapacitors

PubMed Central

Hu, Chenchen; Xu, Henghui; Liu, Xiaoxiao; Zou, Feng; Qie, Long; Huang, Yunhui; Hu, Xianluo

2015-01-01

VO2/TiO2 nanosponges with easily tailored nanoarchitectures and composition were synthesized by electrostatic spray deposition as binder-free electrodes for supercapacitors. Benefiting from the unique interconnected pore network of the VO2/TiO2 electrodes and the synergistic effect of high-capacity VO2 and stable TiO2, the as-formed binder-free VO2/TiO2 electrode exhibits a high capacity of 86.2 mF cm−2 (~548 F g−1) and satisfactory cyclability with 84.3% retention after 1000 cycles. This work offers an effective and facile strategy for fabricating additive-free composites as high-performance electrodes for supercapacitors. PMID:26531072

VO2/TiO2 Nanosponges as Binder-Free Electrodes for High-Performance Supercapacitors.

PubMed

Hu, Chenchen; Xu, Henghui; Liu, Xiaoxiao; Zou, Feng; Qie, Long; Huang, Yunhui; Hu, Xianluo

2015-11-04

VO2/TiO2 nanosponges with easily tailored nanoarchitectures and composition were synthesized by electrostatic spray deposition as binder-free electrodes for supercapacitors. Benefiting from the unique interconnected pore network of the VO2/TiO2 electrodes and the synergistic effect of high-capacity VO2 and stable TiO2, the as-formed binder-free VO2/TiO2 electrode exhibits a high capacity of 86.2 mF cm(-2) (~548 F g(-1)) and satisfactory cyclability with 84.3% retention after 1000 cycles. This work offers an effective and facile strategy for fabricating additive-free composites as high-performance electrodes for supercapacitors.

Influence of VO2 Nanoparticle Morphology on the Colorimetric Assay of H2O2 and Glucose

PubMed Central

Tian, Rui; Sun, Jiaheng; Qi, Yanfei; Zhang, Boyu; Guo, Shuanli; Zhao, Mingming

2017-01-01

Nanozyme-based colorimetric sensors have received considerable attention due to their unique properties. The size, shape, and surface chemistry of these nanozymes could dramatically influence their sensing behaviors. Herein, a comparative study of VO2 nanoparticles with different morphologies (nanofibers, nanosheets, and nanorods) was conducted and applied to the sensitive colorimetric detection of H2O2 and glucose. The peroxidase-like activities and mechanisms of VO2 nanoparticles were analyzed. Among the VO2 nanoparticles, VO2 nanofibers exhibited the best peroxidase-like activity. Finally, a comparative quantitative detections of H2O2 and glucose were done on fiber, sheet, and rod nanoparticles. Under the optimal reaction conditions, the lower limit of detection (LOD) of the VO2 nanofibers, nanosheets, and nanorods for H2O2 are found to be 0.018, 0.266, and 0.41 mM, respectively. The VO2 nanofibers, nanosheets, and nanorods show the linear response for H2O2 from 0.025–10, 0.488–62.5, and 0.488–15.625 mM, respectively. The lower limit of detection (LOD) of the VO2 nanofibers, nanosheets, and nanorods for glucose are found to be 0.009, 0.348, and 0.437 mM, respectively. The VO2 nanofibers, nanosheets, and nanorods show the linear response for glucose from 0.01–10, 0.625–15, and 0.625–10 mM, respectively. The proposed work will contribute to the nanozyme-based colorimetric assay. PMID:29068412

The effect of intermittent standing or walking during head down tilt bedrest on peak O2 consumption

NASA Technical Reports Server (NTRS)

Ertl, A. C.; Dearborn, A. S.; Vernikos, J.

1992-01-01

The cardiovascular aspect of bedrest deconditioning is manifested by decreases in peak O2 uptake (VO(sub 2 peak)) during minimal exercise. The effect of intermittent standing (+G(z)) or walking (+G(z)W) during 4 days of 7 degree Head Down Tilt bedrest (HDT) on VO(sub 2 peak) was evaluated. Methods: Five protocols were performed by eight male subjects; control (C) consisting of complete bedrest, and 15 minute periods to total 2 or 4 hours daily of standing (+G(z)(exp 2) and +G(z)(exp 4) respectively) or walking at 3.0 MPH (+G(z)W2 and +G(z)W4 respectively). Subjects performed VO(sub 2 peak) tests prior to and on the final day of HDT. VO(sub 2 peak) was determined using open circuit indirect calorimetry during supine leg cycling ergometry. After a 5 minute warmup, three 2 minute incremental loads of 33 W previously determined to elicit VO(sub 2 peak) were given and the subject cycled to volitional fatigue. Results: The C protocol VO(sub 2 peak) decreased by 16 percent (2.71 plus or minus 0.16 to 2.27 plus or minus 0.14 L/min) and 11 percent in +G(z)(exp 4) (2.72 plus or minus 0.15 to 2.43 plus or minus 0.14 L/min). With +G(z)W2 VO(sub 2 peak) decreased by 9 percent (2.71 plus or minus 0.17 to 2.46 plus or minus 0.14 L/min) and with +G(z)W4, VO(sub 2 peak) decreased by 10 percent (2.71 plus or minus 0.14 to 2.43 plus or minus 0.14 L/min). VO(sub 2 peak) in all protocols decreased with HDT (P less than 0.05). The decrease in C VO(sub 2 peak) was significantly greater (P less than 0.05) than the decreases in either +G(z) or +G(z)W protocols. Conclusion: The deconditioning that occurs after only 4 days of HDT was demonstrated by decreases in VO(sub 2 peak). Intermittent +G(z) or +G(z)W attenuated, but did not prevent, the decrease in VO(sub 2 peak) with HDT.

van der Waals epitaxial ZnTe thin film on single-crystalline graphene

NASA Astrophysics Data System (ADS)

Sun, Xin; Chen, Zhizhong; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Washington, Morris; Lu, Toh-Ming

2018-01-01

Graphene template has long been promoted as a promising host to support van der Waals flexible electronics. However, van der Waals epitaxial growth of conventional semiconductors in planar thin film form on transferred graphene sheets is challenging because the nucleation rate of film species on graphene is significantly low due to the passive surface of graphene. In this work, we demonstrate the epitaxy of zinc-blende ZnTe thin film on single-crystalline graphene supported by an amorphous glass substrate. Given the amorphous nature and no obvious remote epitaxy effect of the glass substrate, this study clearly proves the van der Waals epitaxy of a 3D semiconductor thin film on graphene. X-ray pole figure analysis reveals the existence of two ZnTe epitaxial orientational domains on graphene, a strong X-ray intensity observed from the ZnTe [ 1 ¯ 1 ¯ 2] ǁ graphene [10] orientation domain, and a weaker intensity from the ZnTe [ 1 ¯ 1 ¯ 2] ǁ graphene [11] orientation domain. Furthermore, this study systematically investigates the optoelectronic properties of this epitaxial ZnTe film on graphene using temperature-dependent Raman spectroscopy, steady-state and time-resolved photoluminescence spectroscopy, and fabrication and characterization of a ZnTe-graphene photodetector. The research suggests an effective approach towards graphene-templated flexible electronics.

Voltage switching of a VO{sub 2} memory metasurface using ionic gel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldflam, M. D.; Liu, M. K.; Chapler, B. C.

2014-07-28

We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO{sub 2}) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO{sub 2} layer. Positive and negative voltage application can selectively tune the metasurface resonance into the “off” or “on” state by pushing the VO{sub 2} into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO{sub 2} based devices suggests that this voltage-induced switching originates primarilymore » from electrochemical effects related to oxygen migration across the electrolyte–VO{sub 2} interface.« less

Influences of annealing temperature on sprayed CuFeO2 thin films

NASA Astrophysics Data System (ADS)

Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

2018-06-01

Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

A comparative analysis of physiological responses at submaximal workloads during different laboratory simulations of field cycling.

PubMed

Kenny, G P; Reardon, F D; Marion, A; Thoden, J S

1995-01-01

The purpose of this study was to evaluate the relationships between heart rate (fc), oxygen consumption (VO2), peak force and average force developed at the crank in response to submaximal exercise employing a racing bicycle which was attached to an ergometer (RE), ridden on a treadmill (TC) and ridden on a 400-m track (FC). Eight male trained competitive cyclists rode at three pre-determined work intensities set at a proportion of their maximal oxygen consumption (VO2max): (1) below lactate threshold [work load that produces a VO2 which is 10% less than the lactate threshold VO2 (sub-LT)], (2) lactate threshold VO2 (LT), and (3) above lactate threshold [workload that produces a VO2 which is 10% greater than lactate threshold VO2 (supra-LT)], and equated across exercise modes on the basis of fc. Voltage signals from the crank arm were recorded as FM signals for subsequent representation of peak and average force. Open circuit VO2 measurements were done in the field by Douglas bag gas collection and in the laboratory by automated gas collection and analysis. fc was recorded with a telemeter (Polar Electro Sport Tester, PE3000). Significant differences (P < 0.05) were observed: (1) in VO2 between FC and both laboratory conditions at sub-LT intensity and LT intensities, (2) in peak force between FC and TC at sub-LT intensity, (3) in average force between FC and RE at sub-LT. No significant differences were demonstrated at supra-LT intensity for VO2. Similarly no significant differences were observed in peak and average force for either LT or supra-LT intensities. These data indicate that equating work intensities on the basis of fc measured in laboratory conditions would overestimate the VO2 which would be generated in the field and conversely, that using fc measured in the laboratory to establish field work intensity would underestimate mechanical workload experienced in the field.

Synthesis of Bi2S3/BiVO4 Heterojunction with a One-Step Hydrothermal Method Based on pH Control and the Evaluation of Visible-Light Photocatalytic Performance

PubMed Central

Zhao, Deqiang; Wang, Wenwen; Zong, Wenjuan; Xiong, Shimin; Zhang, Qian; Ji, Fangying; Xu, Xuan

2017-01-01

The band gaps of bismuth vanadate (BiVO4) and bismuth sulfide (Bi2S3) are about 2.40 eV and 1.30 eV, respectively. Although both BiVO4 and Bi2S3 are capable of strong visible light absorption, electron–hole recombination occurs easily. To solve this problem, we designed a one-step hydrothermal method for synthesizing a Bismuth sulfide (Bi2S3)/Bismuth vanadate (BiVO4) heterojunction using polyvinylpyrrolidone K-30 (PVP) as a structure-directing agent, and 2-Amino-3-mercaptopropanoic acid (l-cysteine) as a sulfur source. The pH of the reaction solution was regulated to yield different products: when the pH was 7.5, only monoclinic BiVO4 was produced (sample 7.5); when the pH was 8.0 or 8.5, both Bi2S3 and BiVO4 were produced (samples 8.0 and 8.5); and when the pH was 9.0, only Bi2S3 was produced (sample 9.0). In sample 8.0, Bi2S3 and BiVO4 were closely integrated with each other, with Bi2S3 particles formed on the surface of concentric BiVO4 layers, but the two compounds grew separately in a pH solution of 8.5. Visible-light photocatalytic degradation experiments demonstrated that the degradation efficiency of the Bi2S3/BiVO4 heterojunction was highest when prepared under a pH of 8.0. The initial rhodamine B in the solution (5 mg/L) was completely degraded within three hours. Recycling experiments verified the high stability of Bi2S3/BiVO4. The synthesis method proposed in this paper is expected to enable large-scale and practical use of Bi2S3/BiVO4. PMID:28767085

Elastic and dielectric anisotropy in barium strontium titanate thin films on orthorhombic neodymium gallate substrates

NASA Astrophysics Data System (ADS)

Simon, William Kurt

Functional oxide thin films often focus on standard cubic substrates that impose an equal biaxial plane stress condition (sigma11 = sigma22) to the film. These internal stresses in thin films reach magnitudes not easily achieved in bulk materials and represent an important influence on the properties of thin films. Equal biaxial plane stress is a small sub-set of stress conditions. Anisotropic stress (sigma11 ≠ sigma 22) represents a wide range of influences that can be utilized to manipulate the properties of thin films. To investigate these conditions, heteroepitaxial thin films of paraelectric Ba0.6Sr0.4TiO3 (BST) were deposited on [100] and [110] oriented single crystal NdGaO 3 (NGO) substrates. Films were grown in the thickness range of 25 to 1200 nm by Pulsed Laser Deposition. The films grown on [100]NGO substrates were [110] oriented, while [110]NGO substrates resulted in [100] oriented BST films. The [100]BST films exhibit a small variation of the epitaxial misfit with direction: -2.6% and -2.8% along the [010]BST and [001 ]BST directions respectively. The epitaxial misfit for the [110]BST films show a greater variation with direction; -1.9% and -2.8% along the [1¯10]BST, and [001]BST directions respectively. The interfacial dislocations that form to relieve stress are found to be dependant on the growth orientation of the film and to contribute to the degree of elastic and dielectric anisotropy. The variation of the residual strains, with thickness and direction are correlated to the non-linear dielectric permittivity at 10 GHz. The relative permittivity is seen to vary from 150 to 500 with in-plane direction of a single [110]BST film. Tunabilities in the same film vary from 30 to 54%, with the greater tunability occurring along the directions with greater permittivity. Analysis of the non-linear polarization curves illustrate that the higher order permittivity terms, which are responsible for tunability, are all adversely affected by strain and reach an elastically saturated limit regardless of growth orientation or in-plane direction. Through the use of unequal epitaxial strains, anisotropy is imparted to the otherwise spherically symmetric permittivity tensor. This asymmetry allows a single film to have a variable response and fill a variety of performance requirements in microwave passive devices.

VO2 Kinetics and Metabolic Contributions Whilst Swimming at 95, 100, and 105% of the Velocity at VO2 max

PubMed Central

Sousa, Ana C.; Vilas-Boas, João P.; Fernandes, Ricardo J.

2014-01-01

A bioenergetical analysis of swimming at intensities near competitive distances is inexistent. It was aimed to compare the transient VO2 kinetics responses and metabolic contributions whilst swimming at different velocities around VO2max⁡. 12 trained male swimmers performed (i) an incremental protocol to determine the velocity at VO2max⁡ (vVO2max⁡) and (ii) three square wave exercises from rest to 95, 100, and 105% of vVO2max⁡. VO2 was directly measured using a telemetric portable gas analyser and its kinetics analysed through a double-exponential model. Metabolic contributions were assessed through the sum of three energy components. No differences were observed in the fast component response (τ 1—15, 18, and 16 s, A 1—36, 34, and 37 mL · kg−1 · min⁡−1, and Gain—32, 29, and 30 mL · min⁡−1 at 95, 100, and 105% of the vVO2max⁡, resp.) but A2 was higher in 95 and 100% compared to 105% intensity (480.76 ± 247.01, 452.18 ± 217.04, and 147.04 ± 60.40 mL · min⁡−1, resp.). The aerobic energy contribution increased with the time sustained (83 ± 5, 74 ± 6, and 59 ± 7% for 95, 100, and 105%, resp.). The adjustment of the cardiovascular and/or pulmonary systems that determine O2 delivery and diffusion to the exercising muscles did not change with changing intensity, with the exception of VO2 slow component kinetics metabolic profiles. PMID:25045690

O2 uptake kinetics during exercise at peak O2 uptake.

PubMed

Scheuermann, Barry W; Barstow, Thomas J

2003-11-01

Compared with moderate- and heavy-intensity exercise, the adjustment of O2 uptake (VO2) to exercise intensities that elicit peak VO2 has received relatively little attention. This study examined the VO2 response of 21 young, healthy subjects (25 +/- 6 yr; mean +/- SD) during cycle ergometer exercise to step transitions in work rate (WR) corresponding to 90, 100, and 110% of the peak WR achieved during a preliminary ramp protocol (15-30 W/min). Gas exchange was measured breath by breath and interpolated to 1-s values. VO2 kinetics were determined by use of a two- or three-component exponential model to isolate the time constant (tau2) as representative of VO2 kinetics and the amplitude (Amp) of the primary fast component independent of the appearance of any VO2 slow component. No difference in VO2 kinetics was observed between WRs (tau90 = 24.7 +/- 9.0; tau100 = 22.8 +/- 6.7; tau110 = 21.5 +/- 9.2 s, where subscripts denote percent of peak WR; P > 0.05); nor in a subgroup of eight subjects was tau2 different from the value for moderate-intensity ( 0.05). As expected, the Amp increased with increasing WRs (Amp90 = 2,089 +/- 548; Amp100 = 2,165 +/- 517; Amp110 = 2,225 +/- 559 ml/min; Amp90 vs. Amp110, P < 0.05). However, the gain (G) of the VO2 response (deltaVO2/deltaWR) decreased with increasing WRs (G90 = 8.5 +/- 0.6; G100 = 7.9 +/- 0.6; G110 = 7.3 +/- 0.6 ml.min-1.W-1; P < 0.05). The Amp of the primary component approximated 85, 88, and 89% of peak Vo2 during 90, 100, and 110% WR transitions, respectively. The results of the present study demonstrate that, compared with moderate- and heavy-intensity exercise, the gain of the Vo2 response (as deltaVO2/DeltaWR) is reduced for exercise transitions in the severe-intensity domain, but the approach to this gain is well described by a common time constant that is invariant across work intensities. The lower deltaVO2/deltaWR may be due to an insufficient adjustment of the cardiovascular and/or pulmonary systems that determine O2 delivery to the exercising muscles or due to recruitment of motor units with lower oxidative capacity, after the onset of exercise in the severe-intensity domain.

Overspeed HIIT in Lower-Body Positive Pressure Treadmill Improves Running Performance.

PubMed

Gojanovic, Boris; Shultz, Rebecca; Feihl, Francois; Matheson, Gordon

2015-12-01

Optimal high-intensity interval training (HIIT) regimens for running performance are unknown, although most protocols result in some benefit to key performance factors (running economy (RE), anaerobic threshold (AT), or maximal oxygen uptake (VO2max)). Lower-body positive pressure (LBPP) treadmills offer the unique possibility to partially unload runners and reach supramaximal speeds. We studied the use of LBPP to test an overspeed HIIT protocol in trained runners. Eleven trained runners (35 ± 8 yr, VO2max, 55.7 ± 6.4 mL·kg⁻¹·min⁻¹) were randomized to an LBPP (n = 6) or a regular treadmill (CON, n = 5), eight sessions over 4 wk of HIIT program. Four to five intervals were run at 100% of velocity at VO2max (vVO2max) during 60% of time to exhaustion at vVO2max (Tlim) with a 1:1 work:recovery ratio. Performance outcomes were 2-mile track time trial, VO2max, vVO2max, vAT, Tlim, and RE. LBPP sessions were carried out at 90% body weight. Group-time effects were present for vVO2max (CON, 17.5 vs. 18.3, P = 0.03; LBPP, 19.7 vs. 22.3 km·h⁻¹; P < 0.001) and Tlim (CON, 307.0 vs. 404.4 s, P = 0.28; LBPP, 444.5 vs. 855.5, P < 0.001). Simple main effects for time were present for field performance (CON, -18; LBPP, -25 s; P = 0.002), VO2max (CON, 57.6 vs. 59.6; LBPP, 54.1 vs. 55.1 mL·kg⁻¹·min⁻¹; P = 0.04) and submaximal HR (157.7 vs. 154.3 and 151.4 vs. 148.5 bpm; P = 0.002). RE was unchanged. A 4-wk HIIT protocol at 100% vVO2max improves field performance, vVO2max, VO2max and submaximal HR in trained runners. Improvements are similar if intervals are run on a regular treadmill or at higher speeds on a LPBB treadmill with 10% body weight reduction. LBPP could provide an alternative for taxing HIIT sessions.

A comparison of the shuttle and 6 minute walking tests with measured peak oxygen consumption in patients with heart failure.

PubMed

Green, D J; Watts, K; Rankin, S; Wong, P; O'Driscoll, J G

2001-09-01

This study investigated the use of an incremental, externally-paced 10 m shuttle walk test (SWT) as an objective, reliable and predictive test of functional capacity in patients with heart failure (CHF). The SWT was compared to a 6 minute walk test (6WT) and a maximal symptom-limited treadmill peak oxygen consumption (VO2peak) test. Experiment 1 examined the reproducibility of the SWT. Two SWF trials were performed and distance ambulated (DA), heart rate (HR) and rate of perceived exertion (RPE) results compared. In experiment 2, SWT, 6WT, and VO2 peak tests were performed and HR. RPE and ambulatory VO2 compared. The SWT demonstrated strong test/retest reliability for DA (r = 0.98). HR (r = 0.96) and RPE (r = 0.89). Treadmill VO2 peak was significantly correlated with DA during the SWT (r = 0.83, P < 0.05), but not the 6WT. SWT peak VO2 (18.5 +/- 1.8 ml.kg(-1) x min(-1)) and treadmill VO2 peak (18.3 +/-2.0 ml.kg(-1) x min(-1)) were also highly correlated (r = 0.78, P < 0.05). Conversely, 6WT peak VO2 and treadmill VO2 peak were not significantly correlated. This study suggests the SWT is a reliable, objective test, highly predictive of VO2 peak which may be a more optimal field exercise test than the self paced 6WT.

C=C bond cleavage on neutral VO3(V2O5)n clusters.

PubMed

Dong, Feng; Heinbuch, Scott; Xie, Yan; Bernstein, Elliot R; Rocca, Jorge J; Wang, Zhe-Chen; Ding, Xun-Lei; He, Sheng-Gui

2009-01-28

The reactions of neutral vanadium oxide clusters with alkenes (ethylene, propylene, 1-butene, and 1,3-butadiene) are investigated by experiments and density function theory (DFT) calculations. Single photon ionization through extreme ultraviolet radiation (EUV, 46.9 nm, 26.5 eV) is used to detect neutral cluster distributions and reaction products. In the experiments, we observe products (V(2)O(5))(n)VO(2)CH(2), (V(2)O(5))(n)VO(2)C(2)H(4), (V(2)O(5))(n)VO(2)C(3)H(4), and (V(2)O(5))(n)VO(2)C(3)H(6), for neural V(m)O(n) clusters in reactions with C(2)H(4), C(3)H(6), C(4)H(6), and C(4)H(8), respectively. The observation of these products indicates that the C=C bonds of alkenes can be broken on neutral oxygen rich vanadium oxide clusters with the general structure VO(3)(V(2)O(5))(n=0,1,2...). DFT calculations demonstrate that the reaction VO(3) + C(3)H(6) --> VO(2)C(2)H(4) + H(2)CO is thermodynamically favorable and overall barrierless at room temperature. They also provide a mechanistic explanation for the general reaction in which the C=C double bond of alkenes is broken on VO(3)(V(2)O(5))(n=0,1,2...) clusters. A catalytic cycle for alkene oxidation on vanadium oxide is suggested based on our experimental and theoretical investigations. The reactions of V(m)O(n) with C(6)H(6) and C(2)F(4) are also investigated by experiments. The products VO(2)(V(2)O(5))(n)C(6)H(4) are observed for dehydration reactions between V(m)O(n) clusters and C(6)H(6). No product is detected for V(m)O(n) clusters reacting with C(2)F(4). The mechanisms of the reactions between VO(3) and C(2)F(4)/C(6)H(6) are also investigated by calculations at the B3LYP/TZVP level.

Effect of BMI, Body Fat Percentage and Fat Free Mass on Maximal Oxygen Consumption in Healthy Young Adults.

PubMed

Mondal, Himel; Mishra, Snigdha Prava

2017-06-01

Maximal oxygen consumption (VO 2max ) is an important measure of cardiorespiratory capacity of an individual at a given degree of fitness and oxygen availability. Risk of cardiovascular diseases increases with increasing degree of obesity and a low level of VO 2max has been established as an independent risk factor for cardiovascular mortality. To determine VO 2max in young adults and to find its correlation with Body Mass Index (BMI), Body Fat% and Fat Free Mass (FFM). Fifty four (male=30, female=24) healthy young adults of age group18-25 years after screening by Physical Activity Readiness Questionnaire (PAR-Q) participated in the study. Height was measured by stadiometer. Weight was measured by digital weighing scale with 0.1 kg sensitivity. Body fat% was measured by Bioelectrical Impedance Analysis (BIA) method. FFM was calculated by subtracting fat mass from the body weight. VO 2max (mL.kg -1 .min -1 ) was obtained by Submaximal Exercise Test (SET) by first two stages of Bruce Protocol with the basis of linear relationship between Heart Rate (HR) and oxygen consumption (VO 2 ). Data were analysed statistically in GraphPad Prism software version 6.01 for windows. VO 2max (mL.kg -1 .min -1 ) of male (43.25±7.25) was significantly (p<0.001) higher than female (31.65±2.10). BMI showed weak negative correlation (r= -0.3232, p=0.0171) with VO 2max but Body Fat% showed strong negative correlation (r= -0.7505, p<0.001) with VO 2max . FFM positively correlated (r=0.3727, p=0.0055) with VO 2max . Increased body fat is associated with decreased level of VO 2max in young adults. Obesity in terms of Fat% is a better parameter than BMI for prediction of low VO 2max .

Verification testing to confirm VO2max attainment in persons with spinal cord injury.

PubMed

Astorino, Todd A; Bediamol, Noelle; Cotoia, Sarah; Ines, Kenneth; Koeu, Nicolas; Menard, Natasha; Nyugen, Brianna; Olivo, Cassandra; Phillips, Gabrielle; Tirados, Ardreen; Cruz, Gabriela Velasco

2018-01-22

Maximal oxygen uptake (VO 2 max) is a widely used measure of cardiorespiratory fitness, aerobic function, and overall health risk. Although VO 2 max has been measured for almost 100 yr, no standardized criteria exist to verify VO 2 max attainment. Studies document that incidence of 'true' VO 2 max obtained from incremental exercise (INC) can be confirmed using a subsequent verification test (VER). In this study, we examined efficacy of VER in persons with spinal cord injury (SCI). Repeated measures, within-subjects study. University laboratory in San Diego, CA. Ten individuals (age and injury duration = 33.3 ± 10.5 yr and 6.8 ± 6.2 yr) with SCI and 10 able-bodied (AB) individuals (age = 24.1 ± 7.4 yr). Peak oxygen uptake (VO 2 peak) was determined during INC on an arm ergometer followed by VER at 105 percent of peak power output (% PPO). Gas exchange data, heart rate (HR), and blood lactate concentration (BLa) were measured during exercise. Across all participants, VO 2 peak was highly related between protocols (ICC = 0.98) and the mean difference was equal to 0.08 ± 0.11 L/min. Compared to INC, VO 2 peak from VER was not different in SCI (1.30 ± 0.45 L/min vs. 1.31 ± 0.43 L/min) but higher in AB (1.63 ± 0.40 L/min vs. 1.76 ± 0.40 L/min). Data show similar VO 2 peak between incremental and verification tests in SCI, suggesting that VER confirms VO 2 max attainment. However, in AB participants completing arm ergometry, VER is essential to validate appearance of 'true' VO 2 peak.

Oxide surfaces in practical and model catalytic systems

NASA Astrophysics Data System (ADS)

Lanier, Courtney H.

Oxide surface structures play a key role in many technological processes, including catalysis, thin film growth, and layered structures, and a thorough understanding of surface structures and surface structure dynamics is required in order to better engineer materials systems for these processes. This research works towards understanding these fundamental principles through an investigation of practical and model catalytic systems. In this work, the surface structures and dynamics of Mg3(VO4)2, LaAlO3, SrTiO3, and alpha-Fe2O3/Fe3O 4 are investigated under a variety of conditions and by a range of experimental and computational techniques. The structure and morphology of LaAlO3 has been investigated over a range of annealing temperatures, and the ( 5x5 )R26.6° reconstruction of LaAlO3 (001) has been determined using transmission electron diffraction combined with direct methods. The structure is relatively simple, consisting of a lanthanum oxide termination with one lanthanum cation vacancy per surface unit cell. The electronic structure is unusual since a fractional number of holes or atomic occupancies per surface unit cell are required to achieve charge neutrality. The reconstruction can be understood in terms of expulsion of the more electropositive cation from the surface followed by an increased covalency between the remaining surface lanthanum atoms and adjacent oxygen atoms. The c(6x2) is a reconstruction of the SrTiO3 (001) surface that is formed between 1050-1100°C in oxidizing annealing conditions. This work proposes a model for the atomic structure for the c(6x2) obtained through a combination of results from transmission electron diffraction, surface x-ray diffraction, direct methods analysis, computational combinational screening, and density functional theory. As it is formed at high temperatures, the surface is complex and can be described as a short-range ordered phase featuring microscopic domains composed of four main structural motifs. Additionally, non-periodic TiO2 units are present on the surface. The surface and bulk of oriented single crystal Mg3(VO 4)2 have been characterized after treatment in a reducing environment. Annealing in a flow of 7% H2 in N2 causes the reduction of Mg3(VO4)2 to Mg3V 2O6, which is shown to be single-crystal to single-crystal and occurs in such a way that the oxygen framework of the crystal is preserved. Transmission electron microscopy images of crystals at the early stages of reduction show low angle grain boundaries and the formation of channels approximately 50nm in diameter. A model for reduction of Mg3(VO4) 2 to Mg3V2O6 based on the experimental observations and derived from classic nucleation theory is proposed. The so-called Biphase structure on alpha-Fe2O3 has been previously reported and described as islands of Fe1-xO and alpha-Fe2O3 arranged in a 40A periodic unit cell. Based on thermodynamic arguments and experimental evidence, including transmission electron diffraction, we find that the previous structure model was incorrect. Rather, it is found that the Biphase structure is, in fact, related to the reduction of alpha-Fe2O3 to Fe 3O4, is a layered structure, and does not contain islands of Fe1-xO. A model for the Biphase termination consisting of bulk alpha-Fe 2O3 with an Fe3O4 -derived overlayer is developed and is consistent with all current and previously reported experimental findings.

Theoretical and experimental analyses to determine the effects of crystal orientation and grain size on the thermoelectric properties of oblique deposited bismuth telluride thin films

NASA Astrophysics Data System (ADS)

Morikawa, Satoshi; Satake, Yuji; Takashiri, Masayuki

2018-06-01

The effects of crystal orientation and grain size on the thermoelectric properties of Bi2Te3 thin films were investigated by conducting experimental and theoretical analyses. To vary the crystal orientation and grain size, we performed oblique deposition, followed by thermal annealing treatment. The crystal orientation decreased as the oblique angle was increased, while the grain size was not changed significantly. The thermoelectric properties were measured at room temperature. A theoretical analysis was performed using a first principles method based on density functional theory. Then the semi-classical Boltzmann transport equation was used in the relaxation time approximation, with the effect of grain size included. Furthermore, the effect of crystal orientation was included in the calculation based on a simple semi-experimental model. A maximum power factor of 11.6 µW/(cm·K2) was obtained at an oblique angle of 40°. The calculated thermoelectric properties were in very good agreement with the experimentally measured values.

Effect of substrate and post-deposition annealing on nanostructure and optical properties of CdTe thin films

NASA Astrophysics Data System (ADS)

Hasani, Ebrahim; Raoufi, Davood

2018-04-01

Thermal evaporation is one of the promising methods for depositing CdTe thin films, which can obtain the thin films with the small thickness. In this work, CdTe nanoparticles have deposited on SiO2 substrates such as quartz (crystal) and glass (amorphous) at a temperature (Ts) of 150 °C under a vacuum pressure of 2 × 10‑5 mbar. The thickness of CdTe thin films prepared under vacuum pressure is 100 nm. X-ray diffraction analysis (XRD) results showed the formation of CdTe cubic phase with a strong preferential orientation of (111) crystalline plane on both substrates. The grain size (D) in this orientation obtained about 7.41 and 5.48 nm for quartz and glass respectively. Ultraviolet-visible spectroscopy (UV–vis) measurements indicated the optical band gap about 1.5 and 1.52 eV for CdTe thin films deposited on quartz and glass respectively. Furthermore, to show the effect of annealing temperature on structure and optical properties of CdTe thin films on quartz and glass substrates, the thin films have been annealed at temperatures 50 and 70 °C for one hour. The results of this work indicate that the structure’s parameters and optical properties of CdTe thin films change due to increase in annealing temperature.

Hydrothermal growth of VO2 nanoplate thermochromic films on glass with high visible transmittance

PubMed Central

Zhang, Jiasong; Li, Jingbo; Chen, Pengwan; Rehman, Fida; Jiang, Yijie; Cao, Maosheng; Zhao, Yongjie; Jin, Haibo

2016-01-01

The preparation of thermochromic vanadium dioxide (VO2) films in an economical way is of interest to realizing the application of smart windows. Here, we reported a successful preparation of self-assembly VO2 nanoplate films on TiO2-buffered glass by a facile hydrothermal process. The VO2 films composed of triangle-shaped plates standing on substrates exhibit a self-generated porous structure, which favors the transmission of solar light. The porosity of films is easily controlled by changing the concentration of precursor solutions. Excellent thermochromic properties are observed with visible light transmittance as high as 70.3% and solar modulating efficiency up to 9.3% in a VO2 film with porosity of ~35.9%. This work demonstrates a promising technique to promote the commercial utilization of VO2 in smart windows. PMID:27296772

Factors affecting oxygen consumption in wild-caught yellow-bellied marmots (Marmota flaviventris).

PubMed

Armitage, K B; Salsbury, C M

1992-12-01

1. All age groups gained mass during the active season, but mass-gain of adult females was delayed during lactation. 2. The relationship of body mass to metabolic rate varied widely; when the relationship was significant, R2 varied from 10.3 to 72.6%. Body mass affects VO2 more during lactation than at any other period. 3. Mean VO2 of adult males was higher in June than that of adult, non-lactating females. 4. VO2 of reproductive females was significantly higher during lactation than during gestation or postlactation because specific VO2 varied. Specific VO2 of non-reproductive females declined over the active season. 5. Specific VO2 of all age groups declined between the premolt and postmolt periods. The reduced maintenance costs can contribute 20-46% to daily growth. 6. Observed VO2 was lower than the value predicted from intraspecific or interspecific Bm:M regressions. 7. VO2 of wild-caught marmots was lower than that of marmots maintained in the laboratory, probably because of dietary differences. 8. Because basal metabolism is a stage on a food-deprivation curve, we suggest that basal metabolic rate is not an appropriate measure of the metabolic activity of free-ranging animals.

Oxygen uptake kinetics and exercise capacity in children with cystic fibrosis.

PubMed

Fielding, Jeremy; Brantley, Lucy; Seigler, Nichole; McKie, Katie T; Davison, Gareth W; Harris, Ryan A

2015-07-01

Exercise capacity, an objective measure of exercise intolerance, is known to predict quality of life and mortality in cystic fibrosis (CF). The mechanisms for exercise intolerance in patients with cystic fibrosis (CF), however, have yet to be fully elucidated. Accordingly, this study sought to investigate oxygen uptake kinetics and the impact of fat-free mass (FFM) on exercise capacity in young patients with CF. 16 young patients with CF (age 13 ± 4 years; 10 female) and 15 matched controls (age 14 ± 3 years; nine female) participated. Pulmonary function and a maximal exercise test on a cycle ergometer using the Godfrey protocol were performed. Exercise capacity (VO2 peak), VO2 response time (VO2 RT), and functional VO2 gain (ΔVO2 /ΔWR) were all determined. Lung function was the only demographic parameter significantly lower (P < 0.05) in CF compared to controls. Exercise capacity was lower in CF (P < 0.014) only when VO2 peak was normalized for FFM (43.5 ± 7.7 vs. 50.6 ± 7.4 ml/kg-FFM/min) or expressed as % predicted (70.1 ± 14.3 vs. 85.4 ± 16.0%). The VO2 RT was slower (36.1 ± 15.1 vs. 25.0 ± 12.4 sec; P = 0.03) and the ΔVO2 /ΔWR slope was lower (8.4 ± 3 ml/min/watt vs. 10.1 ± 1.4 ml/min/watt; P = 0.02) in patients compared to controls, respectively. In conclusion, a delayed VO2 response time coupled with the lower functional VO2 gain (ΔVO2 /ΔWR) suggest that young patients with CF have impairment in oxygen transport and oxygen utilization by the muscles. These data in addition to differences in VO2 peak normalized for FFM provide some insight that muscle mass and muscle metabolism contribute to exercise intolerance in CF. © 2015 Wiley Periodicals, Inc.

Voltage-Controlled Switching and Thermal Effects in VO2 Nano-Gap Junctions

DTIC Science & Technology

2014-06-09

Voltage-controlled switching and thermal effects in VO2 nano-gap junctions Arash Joushaghani,1 Junho Jeong,1 Suzanne Paradis,2 David Alain,2 J...2014) Voltage-controlled switching in lateral VO2 nano-gap junctions with different gap lengths and thermal properties was investigated. The effect of...indicate that the VO2 phase transition was likely initiated electroni- cally, which was sometimes followed by a secondary thermally-induced transition

Crystalline, Highly Oriented MOF Thin Film: the Fabrication and Application.

PubMed

Fu, Zhihua; Xu, Gang

2017-05-01

The thin film of metal-organic frameworks (MOFs) is a rapidly developing research area which has tremendous potential applications in many fields. One of the major challenges in this area is to fabricate MOF thin film with good crystallinity, high orientation and well-controlled thickness. In order to address this challenge, different appealing approaches have been studied intensively. Among various oriented MOF films, many efforts have also been devoted to developing novel properties and broad applications, such as in gas separator, thermoelectric, storage medium and photovoltaics. As a result, there has been a large demand for fundamental studies that can provide guidance and experimental data for further applications. In this account, we intend to present an overview of current synthetic methods for fabricating oriented crystalline MOF thin film and bring some updated applications. We give our perspective on the background, preparation and applications that led to the developments in this area and discuss the opportunities and challenges of using crystalline, highly oriented MOF thin film. © 2017 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Structure, hydrolysis, and diffusion of aqueous vanadium ions from Car-Parrinello molecular dynamics

NASA Astrophysics Data System (ADS)

Jiang, Zhen; Klyukin, Konstantin; Alexandrov, Vitaly

2016-09-01

A molecular level understanding of the properties of electroactive vanadium species in aqueous solution is crucial for enhancing the performance of vanadium redox flow batteries. Here, we employ Car-Parrinello molecular dynamics simulations based on density functional theory to investigate the hydration structures, first hydrolysis reaction, and diffusion of aqueous V2+, V3+, VO2+, and VO 2+ ions at 300 K. The results indicate that the first hydration shell of both V2+ and V3+ contains six water molecules, while VO2+ is coordinated to five and VO 2+ to three water ligands. The first acidity constants (pKa) estimated using metadynamics simulations are 2.47, 3.06, and 5.38 for aqueous V3+, VO 2+ , and VO2+, respectively, while V2+ is predicted to be a fairly weak acid in aqueous solution with a pKa value of 6.22. We also show that the presence of chloride ions in the first coordination sphere of the aqueous VO 2+ ion has a significant impact on water hydrolysis leading to a much higher pKa value of 4.8. This should result in a lower propensity of aqueous VO 2+ for oxide precipitation reaction in agreement with experimental observations for chloride-based electrolyte solutions. The computed diffusion coefficients of vanadium species in water at room temperature are found to increase as V 3 + < VO 2 + < V O 2 + < V 2 + and thus correlate with the simulated hydrolysis constants, namely, the higher the pKa value, the greater the diffusion coefficient.

Quantifying resistances across nanoscale low- and high-angle interspherulite boundaries in solution-processed organic semiconductor thin films.

PubMed

Lee, Stephanie S; Mativetsky, Jeffrey M; Loth, Marsha A; Anthony, John E; Loo, Yueh-Lin

2012-11-27

The nanoscale boundaries formed when neighboring spherulites impinge in polycrystalline, solution-processed organic semiconductor thin films act as bottlenecks to charge transport, significantly reducing organic thin-film transistor mobility in devices comprising spherulitic thin films as the active layers. These interspherulite boundaries (ISBs) are structurally complex, with varying angles of molecular orientation mismatch along their lengths. We have successfully engineered exclusively low- and exclusively high-angle ISBs to elucidate how the angle of molecular orientation mismatch at ISBs affects their resistivities in triethylsilylethynyl anthradithiophene thin films. Conductive AFM and four-probe measurements reveal that current flow is unaffected by the presence of low-angle ISBs, whereas current flow is significantly disrupted across high-angle ISBs. In the latter case, we estimate the resistivity to be 22 MΩμm(2)/width of the ISB, only less than a quarter of the resistivity measured across low-angle grain boundaries in thermally evaporated sexithiophene thin films. This discrepancy in resistivities across ISBs in solution-processed organic semiconductor thin films and grain boundaries in thermally evaporated organic semiconductor thin films likely arises from inherent differences in the nature of film formation in the respective systems.

Oriented niobate ferroelectric thin films for electrical and optical devices

DOEpatents

Wessels, Bruce W.; Nystrom, Michael J.

2001-01-01

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or cyrstalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Peak oxygen consumption measured during the stair-climbing test in lung resection candidates.

PubMed

Brunelli, Alessandro; Xiumé, Francesco; Refai, Majed; Salati, Michele; Di Nunzio, Luca; Pompili, Cecilia; Sabbatini, Armando

2010-01-01

The stair-climbing test is commonly used in the preoperative evaluation of lung resection candidates, but it is difficult to standardize and provides little physiologic information on the performance. To verify the association between the altitude and the V(O2peak) measured during the stair-climbing test. 109 consecutive candidates for lung resection performed a symptom-limited stair-climbing test with direct breath-by-breath measurement of V(O2peak) by a portable gas analyzer. Stepwise logistic regression and bootstrap analyses were used to verify the association of several perioperative variables with a V(O2peak) <15 ml/kg/min. Subsequently, multiple regression analysis was also performed to develop an equation to estimate V(O2peak) from stair-climbing parameters and other patient-related variables. 56% of patients climbing <14 m had a V(O2peak) <15 ml/kg/min, whereas 98% of those climbing >22 m had a V(O2peak) >15 ml/kg/min. The altitude reached at stair-climbing test resulted in the only significant predictor of a V(O2peak) <15 ml/kg/min after logistic regression analysis. Multiple regression analysis yielded an equation to estimate V(O2peak) factoring altitude (p < 0.0001), speed of ascent (p = 0.005) and body mass index (p = 0.0008). There was an association between altitude and V(O2peak) measured during the stair-climbing test. Most of the patients climbing more than 22 m are able to generate high values of V(O2peak) and can proceed to surgery without any additional tests. All others need to be referred for a formal cardiopulmonary exercise test. In addition, we were able to generate an equation to estimate V(O2peak), which could assist in streamlining the preoperative workup and could be used across different settings to standardize this test. Copyright (c) 2010 S. Karger AG, Basel.

The Effect of Habitual Smoking on VO2max

NASA Technical Reports Server (NTRS)

Wier, Larry T.; Suminski, Richard R.; Poston, Walker S.; Randles, Anthony M.; Arenare, Brian; Jackson, Andrew S.

2008-01-01

VO2max is associated with many factors, including age, gender, physical activity, and body composition. It is popularly believed that habitual smoking lowers aerobic fitness. PURPOSE: to determine the effect of habitual smoking on VO2max after controlling for age, gender, activity and BMI. METHODS: 2374 men and 375 women employed at the NASA/Johnson Space Center were measured for VO2max by indirect calorimetry (RER>=1.1), activity by the 11 point (0-10) NASA Physical Activity Status Scale (PASS), BMI and smoking pack-yrs (packs day*y of smoking). Age was recorded in years and gender was coded as M=1, W=0. Pack.y was made a categorical variable consisting of four levels as follows: Never Smoked (0), Light (1-10), Regular (11-20), Heavy (>20). Group differences were verified by ANOVA. A General Linear Models (GLM) was used to develop two models to examine the relationship of smoking behavior on VO2max. GLM #1(without smoking) determined the combined effects of age, gender, PASS and BMI on VO2max. GLM #2 (with smoking) determined the added effects of smoking (pack.y groupings) on VO2max after controlling for age, gender, PASS and BMI. Constant errors (CE) were calculated to compare the accuracy of the two models for estimating the VO2max of the smoking subgroups. RESULTS: ANOVA affirmed the mean VO2max of each pack.y grouping decreased significantly (p<0.01) as the level of smoking exposure increased. GLM #1 showed that age, gender, PASS and BMI were independently related with VO2max (R2 = 0.642, SEE = 4.90, p<0.001). The added pack.y variables in GLM #2 were statistically significant (R2 change = 0.7%, p<0.01). Post hoc analysis showed that compared to Never Smoked, the effects on VO2max from Light and Regular smoking habits were -0.83 and -0.85 ml.kg- 1.min-1 respectively (p<0.05). The effect of Heavy smoking on VO2max was -2.56 ml.kg- 1.min-1 (p<0.001). The CE s of each smoking group in GLM #2 was smaller than the CE s of the smoking group counterparts in GLM #1. CONCLUSIONS: After accounting for the effects of gender, age, PASS and BMI the effect of habitual smoking on reducing VO2max is minimal, about 0.85 ml/kg/min, until the habit exceeds 20 pack.y at which point an additional decrease of 1.71 ml/kg/min is noted. Adding pack.y data improves the accuracy of predicting the VO2max of smokers.

Comparison of distribution and toxicity following repeated oral dosing of different vanadium oxide nanoparticles in mice.

PubMed

Park, Eun-Jung; Lee, Gwang-Hee; Yoon, Cheolho; Kim, Dong-Wan

2016-10-01

Vanadium is an important ultra-trace element derived from fuel product combustion. With the development of nanotechnology, vanadium oxide nanoparticles (VO NPs) have been considered for application in various fields, thus the possibility of release into the environment and human exposure is also increasing. Considering that verification of bioaccumulation and relevant biological responses are essential for safe application of products, in this study, we aimed to identify the physicochemical properties that determine their health effects by comparing the biological effects and tissue distribution of different types of VO NPs in mice. For this, we prepared five types of VO NPs, commercial (C)-VO2 and -V2O5 NPs and synthetic (S)-VO2, -V2O3, and -V2O5 NPs. While the hydrodynamic diameter of the two types of C-VO NPs was irregular and impossible to measure, those of the three types of S-VO NPs was in the range of 125-170nm. The S- and C-V2O5 NPs showed higher dissolution rates compared to other VO NPs. We orally dosed the five types of VO NPs (70 and 210μg/mouse, approximately 2 and 6mg/kg) to mice for 28 days and compared their biodistribution and toxic effects. We found that S-V2O5 and S-V2O3 NPs more accumulated in tissues compared to other three types of VO NPs, and the accumulated level was in order of heart>liver>kidney>spleen. Additionally, tissue levels of redox reaction-related elements and electrolytes (Na(+), K(+), and Ca(2+)) were most clearly altered in the heart of treated mice. Notably, all S- and C-VO NPs decreased the number of WBCs at the higher dose, while total protein and albumin levels were reduced at the higher dose of S-V2O5 and S-V2O3 NPs. Taken together, we conclude that the biodistribution and toxic effects of VO NPs depend on their dissolution rates and size (surface area). Additionally, we suggest that further studies are needed to clarify effects of VO NPs on functions of the heart and the immune system. Copyright © 2016 Elsevier Inc. All rights reserved.

Resistance modulation in VO2 nanowires induced by an electric field via air-gap gates

NASA Astrophysics Data System (ADS)

Kanki, Teruo; Chikanari, Masashi; Wei, Tingting; Tanaka, Hidekazu; The Institute of Scientific; Industrial Research Team

Vanadium dioxide (VO2) shows huge resistance change with metal-insulator transition (MIT) at around room temperature. Controlling of the MIT by applying an electric field is a topical ongoing research toward the realization of Mott transistor. In this study, we have successfully switched channel resistance of VO2 nano-wire channels by a pure electrostatic field effect using a side-gate-type field-effect transistor (SG-FET) viaair gap and found that single crystalline VO2 nanowires and the channels with narrower width enhance transport modulation rate. The rate of change in resistance ((R0-R)/R, where R0 and R is the resistance of VO2 channel with off state and on state gate voltage (VG) , respectively) was 0.42 % at VG = 30 V in in-plane poly-crystalline VO2 channels on Al2O3(0001) substrates, while the rate in single crystalline channels on TiO2 (001) substrates was 3.84 %, which was 9 times higher than that using the poly-crystalline channels. With reducing wire width from 3000 nm to 400 nm of VO2 on TiO2 (001) substrate, furthermore, resistance modulation ratio enhanced from 0.67 % to 3.84 %. This change can not be explained by a simple free-electron model. In this presentation, we will compare the electronic properties between in-plane polycrystalline VO2 on Al2O3 (0001) and single crystalline VO2 on TiO2 (001) substrates, and show experimental data in detail..

Relationship between percentages of heart rate reserve and oxygen uptake reserve during cycling and running: a validation study.

PubMed

Guimarães, Giovanna C; Farinatti, Paulo T V; Midgley, Adrian W; Vasconcellos, Fabrício; Vigário, Patrícia; Cunha, Felipe A

2017-06-22

The present study investigated the relationship between percentages of heart rate reserve (%HRR) and oxygen uptake reserve (%VO2R) during a cardiopulmonary exercise test (CPET) and discrete bouts of isocaloric cycling and treadmill running. Thirty men visited the laboratory three times for anthropometrical and resting VO2 assessments, and perform cycling and running CPETs. Ten men visited the laboratory twice more to investigate the validity of the %HRR-%VO2R relationships during isocaloric bouts of cycling and running at 75% VO2R with energy expenditures of 400 kcals. The %HRR was significantly higher than the %VO2R during both CPETs at all exercise intensities (P < 0.001). During isocaloric exercise bouts, mean %HRR-%VO2R differences of 6.5% and 7.0% were observed for cycling and running, respectively (P = 0.007 to P < 0.001). The %HRR and %VO2R increased over time (P < 0.001), the rate of which was influenced by exercise modality (P < 0.001). On average, heart rate was 5 (P = 0.007) and 8 (P < 0.001) beats·min higher than predicted from the second energy expenditure quartile for cycling and running, respectively; however, observed VO2 was lower than predicted during all quartiles for cycling, and the first quartile for running. Consequently, time to achieve the target energy expenditure was greater than predicted (P < 0.01). In conclusion, the %HRR-%VO2R relationship observed during CPET data did not accurately transpose to prolonged isocaloric bouts of cycling and running. Additionally, power outputs and speeds defined by the ACSM equations for cycling and running, respectively, overestimated VO2 and energy expenditure.

Two-dimensional mapping of triaxial strain fields in a multiferroic BiFeO3 thin film using scanning x-ray microdiffraction

NASA Astrophysics Data System (ADS)

Bark, Chung W.; Cho, Kyung C.; Koo, Yang M.; Tamura, Nobumichi; Ryu, Sangwoo; Jang, Hyun M.

2007-03-01

The dramatically enhanced polarizations and saturation magnetizations observed in the epitaxially constrained BiFeO3 (BFO) thin films with their pronounced grain-orientation dependence have attracted much attention and are attributed largely to the constrained in-plane strain. Thus, it is highly desirable to directly obtain information on the two-dimensional (2D) distribution of the in-plane strain and its correlation with the grain orientation of each corresponding microregion. Here the authors report a 2D quantitative mapping of the grain orientation and the local triaxial strain field in a 250nm thick multiferroic BFO film using a synchrotron x-ray microdiffraction technique. This direct scanning measurement demonstrates that the deviatoric component of the in-plane strain tensor is between 5×10-3 and 6×10-3 and that the local triaxial strain is fairly well correlated with the grain orientation in that particular region.

Peak Oxygen Uptake during and after Long-duration Space Flight

NASA Technical Reports Server (NTRS)

Moore, Alan D., Jr.; Downs, Meghan E.; Lee, Stuart M. C.; Feiveson, Alan H.; Knudsen, Poul; Evetts, Simon N.; Ploutz-Snyder, Lori

2014-01-01

Aerobic capacity (VO2peak) previously has not been measured during or after long-duration spaceflight. PURPOSE: To measure VO2peak and submaximal exercise responses during and after International Space Station (ISS) missions. METHODS: Astronauts (9 M, 5 F: 49 +/- 5 yr, 175 +/- 7 cm, 77.2 +/- 15.1 kg, 40.6 +/- 6.4 mL/kg/min [mean +/-SD]) performed graded peak cycle tests 90 days before spaceflight, 15 d (FD15) after launch and every 30 d thereafter during flight, and 1 (R+1), 10 (R+10), and 30 d (R+30) after landing. Oxygen consumption (VO2) and heart rate (HR) were measured from rest to peak exercise, while cardiac output (Q), stroke volume (SV), and arterial-venous oxygen difference (a-vO2diff) were measured only during rest and submaximal exercise. Data were analyzed using mixed-model linear regression. Body mass contributed significantly to statistical models, and thus results are reported as modeled estimates for an average subject. RESULTS: Early inflight (FD15) VO2peak was 17% lower (95% CI = - 22%, -13%) than preflight. VO2peak increased during spaceflight (0.001 L/min/d, P = 0.02) but did not return to preflight levels. On R+1 VO2peak was 15% (95% CI = -19%, -10%) lower than preflight but recovered to within 2% of preflight by R+30 (95% CI = -6%, +3%). Peak HR was not significantly different from preflight at any time. Inflight submaximal VO2 and a-vO2diff were generally lower than preflight, but the Q vs. VO2 slope was unchanged. In contrast, the SV vs. VO2 slope was lower (P < 0.001), primarily due to elevated SV at rest, and the HR vs. VO2 slope was greater (P < 0.001), largely due to elevated HR during more intense exercise. On R+1 although the relationships between VO2 and Q, SV, and HR were not statistically different than preflight, resting and submaximal exercise SV was lower (P < 0.001), resting and submaximal exercise HR was higher (P < 0.002), and a-vO2diff was unchanged. HR and SV returned to preflight levels by R+30. CONCLUSION: In the average astronaut VO2peak was reduced during spaceflight and immediately after landing but factors contributing to lower VO2peak may be different during spaceflight and recovery. Maintaining Q while VO2 is reduced inflight may be suggestive of an elevated blood flow to vascular beds other than exercising muscles, but decreased SV after flight likely reduces Q at peak exertion.

Comparison of the optical responses of O-poor and O-rich thermochromic VOX films during semiconductor-to-metal transition

NASA Astrophysics Data System (ADS)

Luo, Zhenfei; Wu, Zhiming; Wang, Tao; Xu, Xiangdong; Li, Weizhi; Li, Wei; Jiang, Yadong

2012-09-01

O-poor and O-rich thermochromic vanadium oxide (VOX) nanostructured thin films were prepared by applying reactive direct current magnetron sputtering and post-annealing in oxygen ambient. UV-visible spectrophotometer and spectroscopic ellipsometry were used to investigate the optical properties of films. It was found that, when the O-poor VOX thin film underwent semiconductor-to-metal transition, the values of optical conductivity and extinction coefficient in the visible region increased due to the existence of occupied band-gap states. This noticeable feature, however, was not observed for the O-rich film, which showed a similar optical behavior with the stoichiometric crystalline VO2 films reported in the literatures. Moreover, the O-poor VOX film exhibits consistent variations of transmission values in the visible/near-infrared region when it undergoes semiconductor-to-metal transition.