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Sample records for oversampled optoelectronic analog-digital

  1. Telemedicine optoelectronic biomedical data processing system

    NASA Astrophysics Data System (ADS)

    Prosolovska, Vita V.

    2010-08-01

    The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

  2. Time-interleaved oversampling convertors

    NASA Astrophysics Data System (ADS)

    Khoini-Poorfard, R.; Johns, D. A.

    1993-09-01

    A new architecture is proposed which exploits the time-interleaving concept to increase the oversampling ratio in delta-sigma modulators. It is shown that the effective oversampling ratio is increased by a factor M through the use of M interconnected modulators. Although a high speed sample-and-hold circuit is still required for an analog-to-digital convertor, speed constraints are significantly reduced for the majority of analogue parts such as loop filters, A/D and D/A blocks.

  3. On automatic synthesis of analog/digital circuits

    SciTech Connect

    Beiu, V.

    1998-12-31

    The paper builds on a recent explicit numerical algorithm for Kolmogorov`s superpositions, and will show that in order to synthesize minimum size (i.e., size-optimal) circuits for implementing any Boolean function, the nonlinear activation function of the gates has to be the identity function. Because classical and--or implementations, as well as threshold gate implementations require exponential size, it follows that size-optimal solutions for implementing arbitrary Boolean functions can be obtained using analog (or mixed analog/digital) circuits. Conclusions and several comments are ending the paper.

  4. Configurable analog-digital conversion using the neural engineering framework

    PubMed Central

    Mayr, Christian G.; Partzsch, Johannes; Noack, Marko; Schüffny, Rene

    2014-01-01

    Efficient Analog-Digital Converters (ADC) are one of the mainstays of mixed-signal integrated circuit design. Besides the conventional ADCs used in mainstream ICs, there have been various attempts in the past to utilize neuromorphic networks to accomplish an efficient crossing between analog and digital domains, i.e., to build neurally inspired ADCs. Generally, these have suffered from the same problems as conventional ADCs, that is they require high-precision, handcrafted analog circuits and are thus not technology portable. In this paper, we present an ADC based on the Neural Engineering Framework (NEF). It carries out a large fraction of the overall ADC process in the digital domain, i.e., it is easily portable across technologies. The analog-digital conversion takes full advantage of the high degree of parallelism inherent in neuromorphic networks, making for a very scalable ADC. In addition, it has a number of features not commonly found in conventional ADCs, such as a runtime reconfigurability of the ADC sampling rate, resolution and transfer characteristic. PMID:25100933

  5. Configurable analog-digital conversion using the neural engineering framework.

    PubMed

    Mayr, Christian G; Partzsch, Johannes; Noack, Marko; Schüffny, Rene

    2014-01-01

    Efficient Analog-Digital Converters (ADC) are one of the mainstays of mixed-signal integrated circuit design. Besides the conventional ADCs used in mainstream ICs, there have been various attempts in the past to utilize neuromorphic networks to accomplish an efficient crossing between analog and digital domains, i.e., to build neurally inspired ADCs. Generally, these have suffered from the same problems as conventional ADCs, that is they require high-precision, handcrafted analog circuits and are thus not technology portable. In this paper, we present an ADC based on the Neural Engineering Framework (NEF). It carries out a large fraction of the overall ADC process in the digital domain, i.e., it is easily portable across technologies. The analog-digital conversion takes full advantage of the high degree of parallelism inherent in neuromorphic networks, making for a very scalable ADC. In addition, it has a number of features not commonly found in conventional ADCs, such as a runtime reconfigurability of the ADC sampling rate, resolution and transfer characteristic.

  6. A neurocomputer based on an analog-digital hybrid architecture

    NASA Technical Reports Server (NTRS)

    Moopenn, A.; Thakoor, A. P.; Duong, T.; Khanna, S. K.

    1987-01-01

    A novel analog-digital hybrid architecture based on the utilization of high density digital random access memories for the storage of the synaptic weights of a neural network, and high speed analog hardware to perform neural computation is described. An electronic neurocomputer based on such an architecture is ideally suited for investigating the dynamics, associative recall properties, and computational capabilities of neural networks and provides significant speed improvement in comparison to conventional software based neural network simulations. As a demonstration of the feasibility of the hybrid architectural concept, a prototype breadboard hybrid neurocomputer system with 32 neurons has been designed and fabricated with off-the-shelf hardware components. The performance of the breadboard system has been tested for variety of applications including associative memory and combinatorial problem solving such as Graph Coloring, and is discussed in this paper.

  7. Immune Centroids Oversampling Method for Binary Classification

    PubMed Central

    Ai, Xusheng; Wu, Jian; Cui, Zhiming

    2015-01-01

    To improve the classification performance of imbalanced learning, a novel oversampling method, immune centroids oversampling technique (ICOTE) based on an immune network, is proposed. ICOTE generates a set of immune centroids to broaden the decision regions of the minority class space. The representative immune centroids are regarded as synthetic examples in order to resolve the imbalance problem. We utilize an artificial immune network to generate synthetic examples on clusters with high data densities, which can address the problem of synthetic minority oversampling technique (SMOTE), which lacks reflection on groups of training examples. Meanwhile, we further improve the performance of ICOTE via integrating ENN with ICOTE, that is, ICOTE + ENN. ENN disposes the majority class examples that invade the minority class space, so ICOTE + ENN favors the separation of both classes. Our comprehensive experimental results show that two proposed oversampling methods can achieve better performance than the renowned resampling methods. PMID:25834570

  8. A digital filter for an analog-digital converter with delta-sigma modulation

    NASA Astrophysics Data System (ADS)

    Beliavskaia, T. G.; Levchuk, Iu. P.; Strigina, E. V.

    1986-05-01

    Various methods of implementing the digital versions of analog-digital converters are examined, with attention given to homogeneous, triangular, and low-frequency digital filters. A comparison of the implementations proposed here makes it possible to optimize the structure of an analog-digital converter with respect to the hardware costs depending on the required accuracy.

  9. Optical Oversampled Analog-to-Digital Conversion

    DTIC Science & Technology

    1992-06-29

    Introduction 1 1.1 Background and Motivation........................... 2 1.1.1 Nyquist Rate Conversion........................ 3 1.1.2 Optical A/ D ...processor [9] was used with the electronic analog input signal driving an optical beam deflector . This method of optical A/ D conversion was limited...implement an optical oversampled A/ D converter. From the theoretical development in Chapter 2 , there are two principal functions which require optical

  10. Nokia PureView oversampling technology

    NASA Astrophysics Data System (ADS)

    Vuori, Tero; Alakarhu, Juha; Salmelin, Eero; Partinen, Ari

    2013-03-01

    This paper describes Nokia's PureView oversampling imaging technology as well as the product, Nokia 808 PureView, featuring it. The Nokia PureView imaging technology is the combination of a large, super high resolution 41Mpix with high performance Carl Zeiss optics. Large sensor enables a pixel oversampling technique that reduces an image taken at full resolution into a lower resolution picture, thus achieving higher definition and light sensitivity. One oversampled super pixel in image file is formed by using many sensor pixels. A large sensor enables also a lossless zoom. If a user wants to use the lossless zoom, the sensor image is cropped. However, up-scaling is not needed as in traditional digital zooming usually used in mobile devices. Lossless zooming means image quality that does not have the digital zooming artifacts as well as no optical zooming artifacts like zoom lens system distortions. Zooming with PureView is also completely silent. PureView imaging technology is the result of many years of research and development and the tangible fruits of this work are exceptional image quality, lossless zoom, and superior low light performance.

  11. BacNet and Analog/Digital Interfaces of the Building Controls Virtual Testbed

    SciTech Connect

    Nouidui, Thierry Stephane; Wetter, Michael; Li, Zhengwei; Pang, Xiufeng; Bhattacharya, Prajesh; Haves, Philip

    2011-11-01

    This paper gives an overview of recent developments in the Building Controls Virtual Test Bed (BCVTB), a framework for co-simulation and hardware-in-the-loop. First, a general overview of the BCVTB is presented. Second, we describe the BACnet interface, a link which has been implemented to couple BACnet devices to the BCVTB. We present a case study where the interface was used to couple a whole building simulation program to a building control system to assess in real-time the performance of a real building. Third, we present the ADInterfaceMCC, an analog/digital interface that allows a USB-based analog/digital converter to be linked to the BCVTB. In a case study, we show how the link was used to couple the analog/digital converter to a building simulation model for local loop control.

  12. Optical hybrid analog-digital signal processing based on spike processing in neurons

    NASA Astrophysics Data System (ADS)

    Fok, Mable P.; Tian, Yue; Rosenbluth, David; Deng, Yanhua; Prucnal, Paul R.

    2011-09-01

    Spike processing is one kind of hybrid analog-digital signal processing, which has the efficiency of analog processing and the robustness to noise of digital processing. When instantiated with optics, a hybrid analog-digital processing primitive has the potential to be scalable, computationally powerful, and have high operation bandwidth. These devices open up a range of processing applications for which electronic processing is too slow. Our approach is based on a hybrid analog/digital computational primitive that elegantly implements the functionality of an integrate-and-fire neuron using a Ge-doped non-linear optical fiber and off-the-shelf semiconductor devices. In this paper, we introduce our photonic neuron architecture and demonstrate the feasibility of implementing simple photonic neuromorphic circuits, including the auditory localization algorithm of the barn owl, which is useful for LIDAR localization, and the crayfish tail-flip escape response.

  13. Small pixel oversampled IR focal plane arrays

    NASA Astrophysics Data System (ADS)

    Caulfield, John; Curzan, Jon; Lewis, Jay; Dhar, Nibir

    2015-06-01

    We report on a new high definition high charge capacity 2.1 Mpixel MWIR Infrared Focal Plane Array. This high definition (HD) FPA utilizes a small 5 um pitch pixel size which is below the Nyquist limit imposed by the optical systems Point Spread Function (PSF). These smaller sub diffraction limited pixels allow spatial oversampling of the image. We show that oversampling IRFPAs enables improved fidelity in imaging including resolution improvements, advanced pixel correlation processing to reduce false alarm rates, improved detection ranges, and an improved ability to track closely spaced objects. Small pixel HD arrays are viewed as the key component enabling lower size, power and weight of the IR Sensor System. Small pixels enables a reduction in the size of the systems components from the smaller detector and ROIC array, the reduced optics focal length and overall lens size, resulting in an overall compactness in the sensor package, cooling and associated electronics. The highly sensitive MWIR small pixel HD FPA has the capability to detect dimmer signals at longer ranges than previously demonstrated.

  14. Photonic analog-to-digital conversion based on oversampling techniques

    NASA Astrophysics Data System (ADS)

    Shoop, Barry L.; Das, Pankaj K.; Ressler, Eugene K., Jr.; Talty, Timothy J.

    2000-07-01

    A novel photonic approach to analog-to-digital (A/D) conversion based on temporal and spatial oversampling techniques in conjunction with a smart pixel hardware implementation of a neural algorithm is described. In this approach, the input signal is first sampled at a rate higher than that required by the Nyquist criterion and then presented spatially as the input to the 2D error diffusion neural network consisting of M X N pixels. The neural network processes the input oversampled analog image and produces an M X N pixel binary output image which is an optimum representation of the input analog signal. Upon convergence, the neural network minimizes an energy function representing the frequency-weighted squared error between the input analog image and the output halftoned image. Decimation and low-pass filtering techniques, common to oversampling A/D converters, digitally sum and average the M X N pixel output binary image using high-speed digital electronic circuitry. By employing a 2D smart pixel neural approach to oversampling A/D conversion, each pixel constitutes a simple oversampling modulator thereby producing a distributed A/D architecture. Spectral noise shaping across the array diffuses quantization error thereby improving the signal-to-noise ratio performance. Here, each quantizer within the network is embedded in a fully- connected, distributed mesh feedback loop which spectrally shapes the overall quantization noise significantly reducing the effects of component mismatch typically associated with parallel or channelized A/D approaches. The 2D neural array provides higher aggregate bit rates which can extend the useful bandwidth of oversampling converters.

  15. The analog-digital conversion equipment of the 'Orbita-RV' equipment

    NASA Astrophysics Data System (ADS)

    Tikhonov, O. S.; Rabinovich, G. V.; Pustygin, E. V.; Kantor, L. Ia.; Chekhovskii, E. Ia.

    1982-11-01

    The analog-digital conversion (ADC) equipment of the Orbita-RV communication system serves to convert sound-broadcasting signals to digital form for transmission in standard digital bit streams over satellite or terrestrial communication links. The ADC equipment also combines standard digital bit streams into groups including printed text (newspaper) signals which are transmitted in bit streams at a rate of 2.048 Megabits/sec. The main components of the ADC equipment are a rack for transmitting radio-broadcast programs in the form of digital bit streams, a rack for the reception of these signals, a rack for routing digital bit streams, and a section for the separation of the digital bit streams. Block diagrams and the principal technical characteristics of these components are presented.

  16. The design, fabrication, and test of a new VLSI hybrid analog-digital neural processing element

    NASA Technical Reports Server (NTRS)

    Deyong, Mark R.; Findley, Randall L.; Fields, Chris

    1992-01-01

    A hybrid analog-digital neural processing element with the time-dependent behavior of biological neurons has been developed. The hybrid processing element is designed for VLSI implementation and offers the best attributes of both analog and digital computation. Custom VLSI layout reduces the layout area of the processing element, which in turn increases the expected network density. The hybrid processing element operates at the nanosecond time scale, which enables it to produce real-time solutions to complex spatiotemporal problems found in high-speed signal processing applications. VLSI prototype chips have been designed, fabricated, and tested with encouraging results. Systems utilizing the time-dependent behavior of the hybrid processing element have been simulated and are currently in the fabrication process. Future applications are also discussed.

  17. The design, fabrication, and test of a new VLSI hybrid analog-digital neural processing element

    NASA Technical Reports Server (NTRS)

    Deyong, Mark R.; Findley, Randall L.; Fields, Chris

    1992-01-01

    A hybrid analog-digital neural processing element with the time-dependent behavior of biological neurons has been developed. The hybrid processing element is designed for VLSI implementation and offers the best attributes of both analog and digital computation. Custom VLSI layout reduces the layout area of the processing element, which in turn increases the expected network density. The hybrid processing element operates at the nanosecond time scale, which enables it to produce real-time solutions to complex spatiotemporal problems found in high-speed signal processing applications. VLSI prototype chips have been designed, fabricated, and tested with encouraging results. Systems utilizing the time-dependent behavior of the hybrid processing element have been simulated and are currently in the fabrication process. Future applications are also discussed.

  18. Nanowire Optoelectronics

    NASA Astrophysics Data System (ADS)

    Wang, Zhihuan; Nabet, Bahram

    2015-12-01

    Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes,"which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light inNWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

  19. Hybrid-integrated prism array optoelectronic targeting system

    NASA Astrophysics Data System (ADS)

    Chang, C. C.; Chang, H. C.; Tang, L. C.; Young, W. K.; Wang, J. C.; Huang, K. L.

    2005-11-01

    This investigation proposes a cost-effective, compact, and robust optoelectronic targeting system for measuring ballistic impact velocity and the distribution of projectile motion. The major elements of this system are four photo-gates hybridized by compound one-dimensional prism array and analog/digital electronic components. The number of light sources and photodetectors used in a photo-gate was reduced to one pair of light source and photodetector. The average velocity and location of the projectile are determined according to the measured time intervals ( ˜10 -8 s) passing each pair. The system can accurately measure the velocity of a bullet as it leaves a gun barrel, as well as the velocity at specific points along the trajectory outside the firearm. Additionally, the system uses a widespread low-powered laser pointer as a light source. Compared with other optoelectronic targeting systems that use high-powered lasers, the proposed system is both economical and safe.

  20. Analog-digital conversion signal-to-noise ratio analysis for synthetic aperture interferometric radiometer

    NASA Astrophysics Data System (ADS)

    Zhang, Jin; Li, Zhiping; Zheng, Cheng; Yao, Xianxun; Yang, Baohua; Shang, Xiaozhou; Miao, Jungang

    2014-01-01

    A nontrivial analog-digital conversion (ADC) signal-to-noise ratio (SNR) analysis for synthetic aperture interferometric radiometers for microwave remote sensing is presented. Correlation uncertainty is a key issue in the digital processing of radiometric signals. The ADC digitizes the analog intermediate frequency signal to perform digital correlations, hence the ADC noise is critical for radiometric performance, but this effect has lacked sufficient analysis. First, the ADC SNR requirement is drawn, and ADC SNR degradation is attributed to input noise, quantization noise, and sampling jitter. Second, it is proved that the input and the quantization noise have negligible effects on visibility uncertainty. Third, it is shown that the sampling jitter should be stringently controlled by Gaussian noise digitization SNR requirement. The sampling clock jitter is the dominant contributor in jitter caused SNR, and is evaluated by the long-term statistical time interval error jitter. Finally, the sampling jitter, the realized ADC SNR ratio and visibility uncertainties are tested on BHU-2D-U radiometer to verify the demonstrations. The analysis results can be used as a guideline in the digital correlation design of polarimetric or synthetic aperture radiometric systems.

  1. An Analog-Digital Mixed Measurement Method of Inductive Proximity Sensor

    PubMed Central

    Guo, Yi-Xin; Shao, Zhi-Biao; Li, Ting

    2015-01-01

    Inductive proximity sensors (IPSs) are widely used in position detection given their unique advantages. To address the problem of temperature drift, this paper presents an analog-digital mixed measurement method based on the two-dimensional look-up table. The inductance and resistance components can be separated by processing the measurement data, thus reducing temperature drift and generating quantitative outputs. This study establishes and implements a two-dimensional look-up table that reduces the online computational complexity through structural modeling and by conducting an IPS operating principle analysis. This table is effectively compressed by considering the distribution characteristics of the sample data, thus simplifying the processing circuit. Moreover, power consumption is reduced. A real-time, built-in self-test (BIST) function is also designed and achieved by analyzing abnormal sample data. Experiment results show that the proposed method obtains the advantages of both analog and digital measurements, which are stable, reliable, and taken in real time, without the use of floating-point arithmetic and process-control-based components. The quantitative output of displacement measurement accelerates and stabilizes the system control and detection process. The method is particularly suitable for meeting the high-performance requirements of the aviation and aerospace fields. PMID:26729118

  2. Reentrant excitation in an analog-digital hybrid circuit model of cardiac tissue

    NASA Astrophysics Data System (ADS)

    Mahmud, Farhanahani; Shiozawa, Naruhiro; Makikawa, Masaaki; Nomura, Taishin

    2011-06-01

    We propose an analog-digital hybrid circuit model of one-dimensional cardiac tissue with hardware implementation that allows us to perform real-time simulations of spatially conducting cardiac action potentials. Each active nodal compartment of the tissue model is designed using analog circuits and a dsPIC microcontroller, by which the time-dependent and time-independent nonlinear current-voltage relationships of six types of ion channel currents employed in the Luo-Rudy phase I (LR-I) model for a single mammalian cardiac ventricular cell can be reproduced quantitatively. Here, we perform real-time simulations of reentrant excitation conduction in a ring-shaped tissue model that includes eighty nodal compartments. In particular, we show that the hybrid tissue model can exhibit real-time dynamics for initiation of reentries induced by uni-directional block, as well as those for phase resetting that leads to annihilation of the reentry in response to impulsive current stimulations at appropriate nodes and timings. The dynamics of the hybrid model are comparable to those of a spatially distributed tissue model with LR-I compartments. Thus, it is conceivable that the hybrid model might be a useful tool for large scale simulations of cardiac tissue dynamics, as an alternative to numerical simulations, leading toward further understanding of the reentrant mechanisms.

  3. A mixed analog/digital chaotic neuro-computer system for quadratic assignment problems.

    PubMed

    Horio, Yoshihiko; Ikeguchi, Tohru; Aihara, Kazuyuki

    2005-01-01

    We construct a mixed analog/digital chaotic neuro-computer prototype system for quadratic assignment problems (QAPs). The QAP is one of the difficult NP-hard problems, and includes several real-world applications. Chaotic neural networks have been used to solve combinatorial optimization problems through chaotic search dynamics, which efficiently searches optimal or near optimal solutions. However, preliminary experiments have shown that, although it obtained good feasible solutions, the Hopfield-type chaotic neuro-computer hardware system could not obtain the optimal solution of the QAP. Therefore, in the present study, we improve the system performance by adopting a solution construction method, which constructs a feasible solution using the analog internal state values of the chaotic neurons at each iteration. In order to include the construction method into our hardware, we install a multi-channel analog-to-digital conversion system to observe the internal states of the chaotic neurons. We show experimentally that a great improvement in the system performance over the original Hopfield-type chaotic neuro-computer is obtained. That is, we obtain the optimal solution for the size-10 QAP in less than 1000 iterations. In addition, we propose a guideline for parameter tuning of the chaotic neuro-computer system according to the observation of the internal states of several chaotic neurons in the network.

  4. Bits from photons: oversampled image acquisition using binary Poisson statistics.

    PubMed

    Yang, Feng; Lu, Yue M; Sbaiz, Luciano; Vetterli, Martin

    2012-04-01

    We study a new image sensor that is reminiscent of a traditional photographic film. Each pixel in the sensor has a binary response, giving only a 1-bit quantized measurement of the local light intensity. To analyze its performance, we formulate the oversampled binary sensing scheme as a parameter estimation problem based on quantized Poisson statistics. We show that, with a single-photon quantization threshold and large oversampling factors, the Cramér-Rao lower bound (CRLB) of the estimation variance approaches that of an ideal unquantized sensor, i.e., as if there were no quantization in the sensor measurements. Furthermore, the CRLB is shown to be asymptotically achievable by the maximum-likelihood estimator (MLE). By showing that the log-likelihood function of our problem is concave, we guarantee the global optimality of iterative algorithms in finding the MLE. Numerical results on both synthetic data and images taken by a prototype sensor verify our theoretical analysis and demonstrate the effectiveness of our image reconstruction algorithm. They also suggest the potential application of the oversampled binary sensing scheme in high dynamic range photography.

  5. Optoelectronic device

    DOEpatents

    Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

    2014-09-09

    The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

  6. Low-voltage and low-power circuit design for mixed analog/digital systems in portable equipment

    NASA Astrophysics Data System (ADS)

    Matsuzawa, Akira

    1994-04-01

    This paper describes low-voltage and low-power (LV/LP) circuit design for both analog LSI's and digital LSI's which are used in mixed analog/digital systems in portable equipment. We review some LV/LP circuits used in digital LSI's, such as general logic gate, DSP, and DRAM, and others used in analog LSI's, such as operational amplifiers, video-signal processing circuits, A/D and D/A converters, filters, and RF circuits, along with a wide range of items used in recently developed LSI's. Since analog circuits have fundamental difficulties for reducing the operating voltage and the power consumption, in spite of recent progress in LV/LP circuit techniques, these difficulties will be a major issue for decreasing the total power consumption of some mixed analog/digital systems used in portable equipment.

  7. LVQ-SMOTE - Learning Vector Quantization based Synthetic Minority Over-sampling Technique for biomedical data.

    PubMed

    Nakamura, Munehiro; Kajiwara, Yusuke; Otsuka, Atsushi; Kimura, Haruhiko

    2013-10-02

    Over-sampling methods based on Synthetic Minority Over-sampling Technique (SMOTE) have been proposed for classification problems of imbalanced biomedical data. However, the existing over-sampling methods achieve slightly better or sometimes worse result than the simplest SMOTE. In order to improve the effectiveness of SMOTE, this paper presents a novel over-sampling method using codebooks obtained by the learning vector quantization. In general, even when an existing SMOTE applied to a biomedical dataset, its empty feature space is still so huge that most classification algorithms would not perform well on estimating borderlines between classes. To tackle this problem, our over-sampling method generates synthetic samples which occupy more feature space than the other SMOTE algorithms. Briefly saying, our over-sampling method enables to generate useful synthetic samples by referring to actual samples taken from real-world datasets. Experiments on eight real-world imbalanced datasets demonstrate that our proposed over-sampling method performs better than the simplest SMOTE on four of five standard classification algorithms. Moreover, it is seen that the performance of our method increases if the latest SMOTE called MWMOTE is used in our algorithm. Experiments on datasets for β-turn types prediction show some important patterns that have not been seen in previous analyses. The proposed over-sampling method generates useful synthetic samples for the classification of imbalanced biomedical data. Besides, the proposed over-sampling method is basically compatible with basic classification algorithms and the existing over-sampling methods.

  8. RACOG and wRACOG: Two Probabilistic Oversampling Techniques

    PubMed Central

    Das, Barnan; Krishnan, Narayanan C.; Cook, Diane J.

    2016-01-01

    As machine learning techniques mature and are used to tackle complex scientific problems, challenges arise such as the imbalanced class distribution problem, where one of the target class labels is under-represented in comparison with other classes. Existing oversampling approaches for addressing this problem typically do not consider the probability distribution of the minority class while synthetically generating new samples. As a result, the minority class is not well represented which leads to high misclassification error. We introduce two Gibbs sampling-based oversampling approaches, namely RACOG and wRACOG, to synthetically generating and strategically selecting new minority class samples. The Gibbs sampler uses the joint probability distribution of attributes of the data to generate new minority class samples in the form of Markov chain. While RACOG selects samples from the Markov chain based on a predefined lag, wRACOG selects those samples that have the highest probability of being misclassified by the existing learning model. We validate our approach using five UCI datasets that were carefully modified to exhibit class imbalance and one new application domain dataset with inherent extreme class imbalance. In addition, we compare the classification performance of the proposed methods with three other existing resampling techniques. PMID:27041974

  9. The development and demonstration of hybrid programmable attitude control electronics. [with adaptable analog/digital design approach

    NASA Technical Reports Server (NTRS)

    Smith, L. S.; Kopf, E. H., Jr.

    1974-01-01

    HYPACE provides an adaptable, analog/digital design approach that permits preflight and in-flight accommodation of mission changes, component performance variations, spacecraft changes, etc., through programing. This enabled broad multimission flexibility of application in a cost-effective manner. The HYPACE design, which was demonstrated in breadboard form on a single-axis gas-bearing spacecraft simulation, uses a single control channel to perform the attitude control functions sequentially, thus significantly reducing the number of component parts over hard-wired designs. The success of this effort resulted in the concept being selected for the Mariner/Jupiter/Saturn 1977 spacecraft application.

  10. The development and demonstration of hybrid programmable attitude control electronics. [with adaptable analog/digital design approach

    NASA Technical Reports Server (NTRS)

    Smith, L. S.; Kopf, E. H., Jr.

    1974-01-01

    HYPACE provides an adaptable, analog/digital design approach that permits preflight and in-flight accommodation of mission changes, component performance variations, spacecraft changes, etc., through programing. This enabled broad multimission flexibility of application in a cost-effective manner. The HYPACE design, which was demonstrated in breadboard form on a single-axis gas-bearing spacecraft simulation, uses a single control channel to perform the attitude control functions sequentially, thus significantly reducing the number of component parts over hard-wired designs. The success of this effort resulted in the concept being selected for the Mariner/Jupiter/Saturn 1977 spacecraft application.

  11. Obstacle Avoidance and Target Acquisition for Robot Navigation Using a Mixed Signal Analog/Digital Neuromorphic Processing System

    PubMed Central

    Milde, Moritz B.; Blum, Hermann; Dietmüller, Alexander; Sumislawska, Dora; Conradt, Jörg; Indiveri, Giacomo; Sandamirskaya, Yulia

    2017-01-01

    Neuromorphic hardware emulates dynamics of biological neural networks in electronic circuits offering an alternative to the von Neumann computing architecture that is low-power, inherently parallel, and event-driven. This hardware allows to implement neural-network based robotic controllers in an energy-efficient way with low latency, but requires solving the problem of device variability, characteristic for analog electronic circuits. In this work, we interfaced a mixed-signal analog-digital neuromorphic processor ROLLS to a neuromorphic dynamic vision sensor (DVS) mounted on a robotic vehicle and developed an autonomous neuromorphic agent that is able to perform neurally inspired obstacle-avoidance and target acquisition. We developed a neural network architecture that can cope with device variability and verified its robustness in different environmental situations, e.g., moving obstacles, moving target, clutter, and poor light conditions. We demonstrate how this network, combined with the properties of the DVS, allows the robot to avoid obstacles using a simple biologically-inspired dynamics. We also show how a Dynamic Neural Field for target acquisition can be implemented in spiking neuromorphic hardware. This work demonstrates an implementation of working obstacle avoidance and target acquisition using mixed signal analog/digital neuromorphic hardware. PMID:28747883

  12. Design and evaluation of a low-level RF control system analog/digital receiver for the ILC main Linacs

    SciTech Connect

    Mavric, Uros; Vidmar, Matjaz; Chase, Brian; /Fermilab

    2008-06-01

    The proposed RF distribution scheme for the two 15 km long ILC LINACs, uses one klystron to feed 26 superconducting RF cavities operating at 1.3 GHz. For a precise control of the vector sum of the signals coming from the SC cavities, the control system needs a high performance, low cost, reliable and modular multichannel receiver. At Fermilab we developed a 96 channel, 1.3 GHz analog/digital receiver for the ILC LINAC LLRF control system. In the paper we present a balanced design approach to the specifications of each receiver section, the design choices made to fulfill the goals and a description of the prototyped system. The design is tested by measuring standard performance parameters, such as noise figure, linearity and temperature sensitivity. Measurements show that the design meets the specifications and it is comparable to other similar systems developed at other laboratories, in terms of performance.

  13. High-dynamic-range hybrid analog-digital control broadband optical spectral processor using micromirror and acousto-optic devices.

    PubMed

    Riza, Nabeel A; Reza, Syed Azer

    2008-06-01

    For the first time, to the best of our knowledge, the design and demonstration of a programmable spectral filtering processor is presented that simultaneously engages the power of an analog-mode optical device such as an acousto-optic tunable filter and a digital-mode optical device such as the digital micromirror device. The demonstrated processor allows a high 50 dB attenuation dynamic range across the chosen 1530-1565 nm (~C band). The hybrid analog-digital spectral control mechanism enables the processor to operate with greater versatility when compared to analog- or digital-only processor designs. Such a processor can be useful both as a test instrument in biomedical applications and as an equalizer in fiber communication networks.

  14. P32Tools: reduction of ISOPHOT P32 oversampled maps

    NASA Technical Reports Server (NTRS)

    Schulz, B.; Lu, N.; Peschke, S. B.; Gabriel, C.; Khan, I.; Laureijs, R. J.

    2002-01-01

    During the IS0 mission, the ISOPHOT instrument has collected more than 1100 observations in oversampled mapping mode (AOT PHT32) in the wavelength range of45 to 240 microns. The observations comprise mapping of small and large extended regions, but also faint point sources. PHT32 observations are affected by strong signal transients due to flux changes generated by the relatively fast chopper movement. A program described by Tuffs & Gabriel (2002), was developed to correct for these effects. It was integrated in the ISOPHOT Interactive Analysis (PIA) via a graphical user interface (GUI), so that most aspects of the processing can be addressed in a coherent and user friendly environment. The resulting package 'P32Tools' was introduced to the user community at three hands-on workshops on PHT32 processing held in spring 2001. The hands-on experience from these workshops lead to further improvements. Here we present an overview of the functionalities of the final release of this new software.

  15. Smectite Detections at Murray Ridge and Cape Tribulation, Mars, from Along-Track Oversampled CRISM Observations

    NASA Astrophysics Data System (ADS)

    Fox, V.; Arvidson, R.; Murchie, S.; Squyres, S.

    2014-07-01

    Aluminous, ferric and magnesian smectites were identified along the rim of Endeavour crater in three major outcrops using CRISM hyperspectral data from enhanced spatial resolution along-track oversampled (ATO) observations.

  16. Detecting target velocity and location using a novel optoelectronic sensing system

    NASA Astrophysics Data System (ADS)

    Chang, Chi Ching

    2004-12-01

    We propose a cost-effective, compact, and robust optoelectronic sensing system for measuring ballistic impact velocity and distribution of the projectile motion. The key elements consisted of this system are four photo-gates hybridized by compound one-dimensional prism array and analog/digital electronic components. The number of light sources and photodetectors used in a photo-gate was reduced to one pair of that. The time interval passing each pair can be measured precisely (~10-8 s). The average velocity and location of projectile are carried out according the measured time intervals. The system can precisely measure the velocity of a bullet as it leaves a gun barrel and the velocity toward the trajectory outside the firearm. Furthermore, the system uses a commonly found low-powered laser pointer as light source. Compared with other optoelectronic sensing systems that use high-powered lasers, our system is both economical and safe.

  17. Experimental Optoelectronic Associative Memory

    NASA Technical Reports Server (NTRS)

    Chao, Tien-Hsin

    1992-01-01

    Optoelectronic associative memory responds to input image by displaying one of M remembered images. Which image to display determined by optoelectronic analog computation of resemblance between input image and each remembered image. Does not rely on precomputation and storage of outer-product synapse matrix. Size of memory needed to store and process images reduced.

  18. Experimental Optoelectronic Associative Memory

    NASA Technical Reports Server (NTRS)

    Chao, Tien-Hsin

    1992-01-01

    Optoelectronic associative memory responds to input image by displaying one of M remembered images. Which image to display determined by optoelectronic analog computation of resemblance between input image and each remembered image. Does not rely on precomputation and storage of outer-product synapse matrix. Size of memory needed to store and process images reduced.

  19. 2x2 oversampling in digital radiography imaging for CsI-based scintillator detectors

    NASA Astrophysics Data System (ADS)

    Kim, Dong Sik; Kim, Eun; Lee, Eunae; Shin, Choul Woo

    2017-03-01

    In order to efficiently conduct the anti-aliasing filtering in digital radiography imaging, the oversampling scheme using an oversampling detector, in which the sampling frequency is higher than that of the desired detector, is considered in this paper. Instead of using difficult analog anti-aliasing filters, digital anti-aliasing filters are applied to the oversampled data and then their downsampling enables acquiring the desired x-ray images. Supposing an ideal anti-aliasing filtering, the detective quantum efficiency (DQE) performance of the desired detector can be close to that of the oversampling detector since the overlap of the adjacent noise aliases can be minimized while maintaining the frequency amplitude response for the fundamental frequency range. In this paper, a 2 x 2 oversampling is conducted for the desired pixel pitch of 152 μm/pixel and various filters are tested for anti-aliasing filtering. It is shown that securing an enough transition band is important to avoid the ringing artifacts even though the anti-aliasing performance deteriorates due to the wide transition band. From an experiment using a CsI(Tl)-based detector, the aliasing artifact problem is alleviated and a DQE improvement of 0.1 is achieved at 2.5 lp/mm from the oversampling radiography imaging over the binning scheme.

  20. Analysis of Along-Track Oversampled CRISM Observations

    NASA Astrophysics Data System (ADS)

    Fraeman, A. A.; Arvidson, R. E.; Murchie, S. L.; McGovern, A.; Seelos, F. P.; Humm, D. C.; Seelos, K. D.

    2011-12-01

    The Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) has recently begun using its gimbaled optical system to acquire observations in which hyperspectral pixels are spatially overlapping in the along-track direction. At the time of this writing, along-track oversampled (ATO) observations of 35 scientifically interesting targets on Mars have been acquired, including data which have been used to tactically guide the Opportunity Mars rover in the exploration of Santa Maria and Endeavour craters at Meridiani Planum [Arvidson et al., this conference]. ATO data are also currently scheduled to be acquired over Curiosity's selected landing site at Gale Crater, with an emphasis on coverage of possible rover traverse paths. Here we describe the properties of the ATO dataset and demonstrate the value of these observations in comparison with normal CRISM full resolution targeted (FRT) ~18 m/pixel data. To first order, along-track pixel overlap allows spectra from deposits at the scale of the CRISM's highest spatial resolution to have a greater chance of being captured by a single pixel rather than split between adjacent pixels. Additionally, techniques designed to take advantage of the spatial overlap of pixels may be used to process ATO data to resolutions smaller than ~18 m/pixel. Along-track pixel spacing at the scale of meters rather than tens of meters in combination with geometric lookup tables (GLT) allow ATO data to be projected to spatial resolutions much smaller than normal FRT observations. Previously undetectable small scale features as small as ~3 m become visible in these improved-resolution images. Additionally, more sophisticated mathematical methods that take into account the trade-off between increased spatial resolutions with decreased signal-to-noise are applied to the ATO CRISM data. These methods, which were originally developed for application to terrestrial microwave radiometer systems, result in the generation of sub-18 m pixels and employ

  1. Synchronization sampling method based on delta-sigma analog-digital converter for underwater towed array system

    NASA Astrophysics Data System (ADS)

    Jiang, Jia-Jia; Duan, Fa-Jie; Li, Yan-Chao; Hua, Xiang-Ning

    2014-03-01

    Synchronization sampling is very important in underwater towed array system where every acquisition node (AN) samples analog signals by its own analog-digital converter (ADC). In this paper, a simple and effective synchronization sampling method is proposed to ensure synchronized operation among different ANs of the underwater towed array system. We first present a master-slave synchronization sampling model, and then design a high accuracy phase-locked loop to synchronize all delta-sigma ADCs to a reference clock. However, when the master-slave synchronization sampling model is used, both the time-delay (TD) of messages traveling along the wired transmission medium and the jitter of the clocks will bring out synchronization sampling error (SSE). Therefore, a simple method is proposed to estimate and compensate the TD of the messages transmission, and then another effective method is presented to overcome the SSE caused by the jitter of the clocks. An experimental system with three ANs is set up, and the related experimental results verify the validity of the synchronization sampling method proposed in this paper.

  2. A hybrid analog-digital phase-locked loop for frequency mode non-contact scanning probe microscopy.

    PubMed

    Mehta, M M; Chandrasekhar, V

    2014-01-01

    Non-contact scanning probe microscopy (SPM) has developed into a powerful technique to image many different properties of samples. The conventional method involves monitoring the amplitude, phase, or frequency of a cantilever oscillating at or near its resonant frequency as it is scanned across the surface of a sample. For high Q factor cantilevers, monitoring the resonant frequency is the preferred method in order to obtain reasonable scan times. This can be done by using a phase-locked-loop (PLL). PLLs can be obtained as commercial integrated circuits, but these do not have the frequency resolution required for SPM. To increase the resolution, all-digital PLLs requiring sophisticated digital signal processors or field programmable gate arrays have also been implemented. We describe here a hybrid analog/digital PLL where most of the components are implemented using discrete analog integrated circuits, but the frequency resolution is provided by a direct digital synthesis chip controlled by a simple peripheral interface controller (PIC) microcontroller. The PLL has excellent frequency resolution and noise, and can be controlled and read by a computer via a universal serial bus connection.

  3. Synchronization sampling method based on delta-sigma analog-digital converter for underwater towed array system.

    PubMed

    Jiang, Jia-Jia; Duan, Fa-Jie; Li, Yan-Chao; Hua, Xiang-Ning

    2014-03-01

    Synchronization sampling is very important in underwater towed array system where every acquisition node (AN) samples analog signals by its own analog-digital converter (ADC). In this paper, a simple and effective synchronization sampling method is proposed to ensure synchronized operation among different ANs of the underwater towed array system. We first present a master-slave synchronization sampling model, and then design a high accuracy phase-locked loop to synchronize all delta-sigma ADCs to a reference clock. However, when the master-slave synchronization sampling model is used, both the time-delay (TD) of messages traveling along the wired transmission medium and the jitter of the clocks will bring out synchronization sampling error (SSE). Therefore, a simple method is proposed to estimate and compensate the TD of the messages transmission, and then another effective method is presented to overcome the SSE caused by the jitter of the clocks. An experimental system with three ANs is set up, and the related experimental results verify the validity of the synchronization sampling method proposed in this paper.

  4. Radiation stability in optoelectronics

    NASA Astrophysics Data System (ADS)

    Zaitov, Farit Alimovich; Litvinova, Nadezhda Nikolaevna; Savitskii, Vladimir Grigor'evich; Sredin, Viktor Gennadievich

    The book deals with various aspects of the radiation stability of some commonly used semiconductor optoelectronic instruments, such as radiation sources and detectors, solar energy converters, and certain types of glasses and fibers. In particular, attention is given to the classification and principal physical characteristics of ionizing radiations, principal types of optoelectronic semiconductor instruments, effect of ionizing radiation on photosensitive and light-emitting semiconductor structures, and effect of ionizing radiation on semiconducting materials.

  5. Modulation transfer function evaluation of cone beam computed tomography for dental use with the oversampling method

    PubMed Central

    Watanabe, H; Honda, E; Kurabayashi, T

    2010-01-01

    Objectives The aim was to investigate the possibility of evaluating the modulation transfer function (MTF) of cone beam CT (CBCT) for dental use using the oversampling method. Methods The CBCT apparatus (3D Accuitomo) with an image intensifier was used with a 100 μm tungsten wire placed inside the scanner at a slight angle to the plane perpendicular to the plane of interest and scanned. 200 contiguous reconstructed images were used to obtain the oversampling line-spread function (LSF). The MTF curve was obtained by computing the Fourier transformation from the oversampled LSF. Line pair tests were also performed using Catphan®. Results The oversampling method provided smooth and reproducible MTF curves. The MTF curves revealed that the spatial resolution in the z-axis direction was significantly higher than that in the axial direction. This result was also confirmed by the line pair test. Conclusions MTF analysis was performed successfully using the oversampling method. In addition, this study clarified that the 3D Accuitomo had high spatial resolution, especially in the z-axis direction. PMID:20089741

  6. [The primary research and development of software oversampling mapping system for electrocardiogram].

    PubMed

    Zhou, Yu; Ren, Jie

    2011-04-01

    We put forward a new concept of software oversampling mapping system for electrocardiogram (ECG) to assist the research of the ECG inverse problem to improve the generality of mapping system and the quality of mapping signals. We then developed a conceptual system based on the traditional ECG detecting circuit, Labview and DAQ card produced by National Instruments, and at the same time combined the newly-developed oversampling method into the system. The results indicated that the system could map ECG signals accurately and the quality of the signals was good. The improvement of hardware and enhancement of software made the system suitable for mapping in different situations. So the primary development of the software for oversampling mapping system was successful and further research and development can make the system a powerful tool for researching ECG inverse problem.

  7. Close-Packed Silicon Microelectrodes for Scalable Spatially Oversampled Neural Recording

    PubMed Central

    Scholvin, Jörg; Kinney, Justin P.; Bernstein, Jacob G.; Moore-Kochlacs, Caroline; Kopell, Nancy; Fonstad, Clifton G.; Boyden, Edward S.

    2015-01-01

    Objective Neural recording electrodes are important tools for understanding neural codes and brain dynamics. Neural electrodes that are close-packed, such as in tetrodes, enable spatial oversampling of neural activity, which facilitates data analysis. Here we present the design and implementation of close-packed silicon microelectrodes, to enable spatially oversampled recording of neural activity in a scalable fashion. Methods Our probes are fabricated in a hybrid lithography process, resulting in a dense array of recording sites connected to submicron dimension wiring. Results We demonstrate an implementation of a probe comprising 1000 electrode pads, each 9 × 9 μm, at a pitch of 11 μm. We introduce design automation and packaging methods that allow us to readily create a large variety of different designs. Significance Finally, we perform neural recordings with such probes in the live mammalian brain that illustrate the spatial oversampling potential of closely packed electrode sites. PMID:26699649

  8. Photonic analog-to-digital converter via asynchronous oversampling

    NASA Astrophysics Data System (ADS)

    Carver, Spencer; Reeves, Erin; Siahmakoun, Azad; Granieri, Sergio

    2012-06-01

    This paper presents a hybrid opto-electronic asynchronous delta-sigma modulator, implemented in the form of a fiber-optic Analog-to-Digital converter (ADC). This architecture was chosen for its independence of an external clock and ease of demodulation through a single low-pass filter stage. The fiber-optic prototype consists of an input laser (wavelength λ1) which is modulated with an input RF signal, a high-speed comparator circuit working as bi-stable quantizer, and a fiber-optic loop that includes a SOA and a band-pass filter that act as a leaky integrator. The fiber-optic loop acts as a fiber-ring resonator (FRR), and defines the resonance wavelength λ2 of the system. The gain within this loop is modified through cross-gain modulation (XGM) by the input wavelength λ1, and thus achieves the desired modulation effect. The proposed architecture has been constructed and characterized at a sampling rate of 15.4 MS/s processing input analog signals in the range of dc-3 MHz with a signal-to-noise ratio of 36 dB and an effective number of bits of 5.7.

  9. Analog-Digital-Wandler

    NASA Astrophysics Data System (ADS)

    Döring, Peter

    Analogsignale in digital codierter Form haben Vorteile (z. B. Speicherung, Übertragung). Ein Beispiel dafür ist die Musik-Film-CD/DVD. In diesem Kapitel werden entsprechende Verfahren vorgestellt. Themen: Grundlagen; Spannungs-Frequenz-Umsetzer: Sägezahn-Verfahren; Dual-Slope-Verfahren; Flash-Umsetzer; Umsetzer nach dem Wägeverfahren. Integrierte Umsetzer.

  10. Optoelectronic Mounting Structure

    DOEpatents

    Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

    2004-10-05

    An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

  11. Discussion of optoelectronic HMDASS

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Liu, Xu; Yang, Yi; Sun, Longhe; Liu, Hua

    2000-10-01

    The use of opto-electronic Helmet Mounted Display And Sight System (HMDASS) will decrease responding time for fighter in near distance tussle. See-through type Helmet Mounted Display (HMD), instead of the simple graduation board display, will provide more information and so much as integrate the FLTR image. We research some questions of TFTLCD device in optic- electric HMDASS application, such as luminance, information content & format etc. This paper discuss the luminance question in perspective type LCD-HMD and put forward a display method to increase the reaction velocity for a pilot using opto-electronic Helmet Mounted Sight (HMS).

  12. A photonic analog-to-digital converter using phase modulation and self-coherent detection with spatial oversampling.

    PubMed

    Golani, Ori; Mauri, Luca; Pasinato, Fabiano; Cattaneo, Cristian; Consonnni, Guido; Balsamo, Stefano; Marom, Dan M

    2014-05-19

    We propose a new type of photonic analog-to-digital converter (ADC), designed for high-resolution (>7 bit) and high sampling rates (scalable to tens of GS/s). It is based on encoding the input analog voltage signal onto the phase of an optical pulse stream originating from a mode-locked laser, and uses spatial oversampling as a means to improve the conversion resolution. This paper describes the concept of spatial oversampling and draws its similarities to the commonly used temporal oversampling. The design and fabrication of a LiNbO(3)/silica hybrid photonic integrated circuit for implementing the spatial oversampling is shown, and its abilities are demonstrated experimentally by digitizing gigahertz signals (frequencies up to 18GHz) at an undersampled rate of 2.56GS/s with a conversion resolution of up to 7.6 effective bits. Oversampling factors of 1-4 are demonstrated.

  13. SROT: Sparse representation-based over-sampling technique for classification of imbalanced dataset

    NASA Astrophysics Data System (ADS)

    Zou, Xionggao; Feng, Yueping; Li, Huiying; Jiang, Shuyu

    2017-08-01

    As one of the most popular research fields in machine learning, the research on imbalanced dataset receives more and more attentions in recent years. The imbalanced problem usually occurs in when minority classes have extremely fewer samples than the others. Traditional classification algorithms have not taken the distribution of dataset into consideration, thus they fail to deal with the problem of class-imbalanced learning, and the performance of classification tends to be dominated by the majority class. SMOTE is one of the most effective over-sampling methods processing this problem, which changes the distribution of training sets by increasing the size of minority class. However, SMOTE would easily result in over-fitting on account of too many repetitive data samples. According to this issue, this paper proposes an improved method based on sparse representation theory and over-sampling technique, named SROT (Sparse Representation-based Over-sampling Technique). The SROT uses a sparse dictionary to create synthetic samples directly for solving the imbalanced problem. The experiments are performed on 10 UCI datasets using C4.5 as the learning algorithm. The experimental results show that compared our algorithm with Random Over-sampling techniques, SMOTE and other methods, SROT can achieve better performance on AUC value.

  14. Multiplexed Oversampling Digitizer in 65 nm CMOS for Column-Parallel CCD Readout

    SciTech Connect

    Grace, Carl; Walder, Jean-Pierre; von der Lippe, Henrik

    2012-04-10

    A digitizer designed to read out column-parallel charge-coupled devices (CCDs) used for high-speed X-ray imaging is presented. The digitizer is included as part of the High-Speed Image Preprocessor with Oversampling (HIPPO) integrated circuit. The digitizer module comprises a multiplexed, oversampling, 12-bit, 80 MS/s pipelined Analog-to-Digital Converter (ADC) and a bank of four fast-settling sample-and-hold amplifiers to instrument four analog channels. The ADC multiplexes and oversamples to reduce its area to allow integration that is pitch-matched to the columns of the CCD. Novel design techniques are used to enable oversampling and multiplexing with a reduced power penalty. The ADC exhibits 188 ?V-rms noise which is less than 1 LSB at a 12-bit level. The prototype is implemented in a commercially available 65 nm CMOS process. The digitizer will lead to a proof-of-principle 2D 10 Gigapixel/s X-ray detector.

  15. Optoelectronic techniques for broadband switching

    NASA Astrophysics Data System (ADS)

    Su, S. F.; Jou, L.; Lenart, J.

    1988-01-01

    Optoelectronic switching employs a hybrid optical/electronic principle to perform the switching function and is applicable for either analog broadband or high-bit rate digital switching. The major advantages of optoelectronic switching include high isolation, low crosstalk, small physical size, light weight, and low power consumption. These advantages make optoelectronic switching an excellent candidate for on-board satellite switching. This paper describes a number of optoelectronic switching architectures. System components required for implementing these switching architectures are discussed. Performance of these architectures are evaluated by calculating their crosstalk, isolation, insertion loss, matrix size, drive power, throughput, and switching speed. Technologies needed for monolithic optoelectronic switching are also identified.

  16. Picosecond optoelectronic devices

    SciTech Connect

    Lee, C.L.

    1984-01-01

    Ever since the invention of picosecond lasers, scientists and electronic engineers have been dreaming of inventing electronic devices that can record in real time the physical and electronic events that take place on picosecond time scales. With the exception of the expensive streak camera, this dream has been largely unfullfilled. Today, a real-time oscilloscope with picosecond time resolution is still not available. To fill the need for even better time resolution, researchers have turned to optical pulses and thus a hybrid technology has emerged-picosecond optoelectronics. This technology, based on bulk photoconductors, has had a slow start. However, because of the simplicity, scaleability, and jitterfree nature of the devices, the technology has recently experienced a rapid growth. This volume reviews the major developments in the field of picosecond optoelectronics over the past decade.

  17. Monolithic Optoelectronic Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Walters, Wayne; Gustafsen, Jerry; Bendett, Mark

    1990-01-01

    Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.

  18. Complexation of Optoelectronic Systems

    NASA Astrophysics Data System (ADS)

    Boreisho, A. S.; Il‧in, M. Yu.; Konyaev, M. A.; Mikhailenko, A. S.; Morozov, A. V.; Strakhov, S. Yu.

    2016-05-01

    Problems of increasing the efficiency and the functionality of complex optoelectronic systems for monitoring real atmospheric conditions and of their use are discussed. It is shown by the example of a meteorological complex comprising an infrared wind-sensing lidar and an X-range Doppler radar that the complexation of probing systems working in different electromagnetic-radiation ranges opens up new opportunities for determining the meteorological parameters of a turbulent atmosphere and investigating the interaction of radiation with it.

  19. Monolithic Optoelectronic Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Walters, Wayne; Gustafsen, Jerry; Bendett, Mark

    1990-01-01

    Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.

  20. Employment of sawtooth-shaped-function excitation signal and oversampling for improving resistance measurement accuracy

    NASA Astrophysics Data System (ADS)

    Lin, Ling; Li, Shujuan; Yan, Wenjuan; Li, Gang

    2016-10-01

    In order to achieve higher measurement accuracy of routine resistance without increasing the complexity and cost of the system circuit of existing methods, this paper presents a novel method that exploits a shaped-function excitation signal and oversampling technology. The excitation signal source for resistance measurement is modulated by the sawtooth-shaped-function signal, and oversampling technology is employed to increase the resolution and the accuracy of the measurement system. Compared with the traditional method of using constant amplitude excitation signal, this method can effectively enhance the measuring accuracy by almost one order of magnitude and reduce the root mean square error by 3.75 times under the same measurement conditions. The results of experiments show that the novel method can attain the aim of significantly improve the measurement accuracy of resistance on the premise of not increasing the system cost and complexity of the circuit, which is significantly valuable for applying in electronic instruments.

  1. A simple method to build oversampled filter banks and tight frames.

    PubMed

    Yang, Bo; Jing, Zhongliang

    2007-11-01

    This paper presents conditions under which the sampling lattice for a filter bank can be replaced without loss of perfect reconstruction. This is the generalization of common knowledge that removing up/downsampling will not lose perfect reconstruction. The results provide a simple way of building oversampled filter banks. If the original filter banks are orthogonal, these oversampled banks construct tight frames of l2 (Z(n)) when iterated. As an example, a quincunx lattice is used to replace the rectangular one of the standard wavelet transform. This replacement leads to a tight frame that has a higher sampling in both time and frequency. The frame transform is nearly shift invariant and has intermediate scales. An application of the transform to image fusion is also presented.

  2. Employment of sawtooth-shaped-function excitation signal and oversampling for improving resistance measurement accuracy.

    PubMed

    Lin, Ling; Li, Shujuan; Yan, Wenjuan; Li, Gang

    2016-10-01

    In order to achieve higher measurement accuracy of routine resistance without increasing the complexity and cost of the system circuit of existing methods, this paper presents a novel method that exploits a shaped-function excitation signal and oversampling technology. The excitation signal source for resistance measurement is modulated by the sawtooth-shaped-function signal, and oversampling technology is employed to increase the resolution and the accuracy of the measurement system. Compared with the traditional method of using constant amplitude excitation signal, this method can effectively enhance the measuring accuracy by almost one order of magnitude and reduce the root mean square error by 3.75 times under the same measurement conditions. The results of experiments show that the novel method can attain the aim of significantly improve the measurement accuracy of resistance on the premise of not increasing the system cost and complexity of the circuit, which is significantly valuable for applying in electronic instruments.

  3. Optoelectronic technology consortium

    NASA Astrophysics Data System (ADS)

    Hibbs-Brenner, Mary

    1992-12-01

    The Optoelectronics Technology Consortium has been established to position U.S. industry as the world leader in optical interconnect technology by developing, fabricating, intergrating and demonstrating the producibility of optoelectronic components for high-density/high-data-rate processors and accelerating the insertion of this technology into military and commercial applications. This objective will be accomplished by a program focused in three areas. (1) Demonstrated performance: OETC will demonstrate an aggregate data transfer rate of 16 Gbit/s between single transmitter and receiver packages, as well as the expandability of this technology by combing four links in parallel to achieve a 64 Gbit/s link. (2) Accelerated development: By collaborating during precompetitive technology development stage, OTEC will advance the development of optical components and produce links for a multiboard processor testbed demonstration; and (3) Producibility: OETC's technology will achieve this performance by using components that are affordable, and reliable, with a line BER less than 10(exp -15) and MTTF greater than 10(exp 6) hours.

  4. Integrated terahertz optoelectronics

    NASA Astrophysics Data System (ADS)

    Liang, Guozhen; Wang, Qi Jie

    2016-11-01

    Currently, terahertz (THz) optical systems are based on bulky free-space optics. This is due to the lack of a common platform onto which different THz components, e.g., source, waveguide, modulator and detector, can be monolithically integrated. With the development of THz quantum cascade laser (QCL), it has been realized that the QCL chip may be such a platform for integrated THz photonics. Here, we report our recent works where the THz QCL is integrated with passive or optoelectronic components. They are: 1) integrated graphene modulator with THz QCL achieving 100% modulation depth and fast speed; 2) phase-locked THz QCL with integrated plasmonic waveguide and subwavelength antennas realizing dynamically widely tunable polarizations.

  5. Optoelectronic Reservoir Computing

    PubMed Central

    Paquot, Y.; Duport, F.; Smerieri, A.; Dambre, J.; Schrauwen, B.; Haelterman, M.; Massar, S.

    2012-01-01

    Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an optoelectronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations. PMID:22371825

  6. Materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John; Smigelski, Jr., Paul Michael

    2015-01-27

    Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

  7. An automated lung nodule detection system for CT images using synthetic minority oversampling

    NASA Astrophysics Data System (ADS)

    Mehre, Shrikant A.; Mukhopadhyay, Sudipta; Dutta, Anirvan; Harsha, Nagam Chaithan; Dhara, Ashis Kumar; Khandelwal, Niranjan

    2016-03-01

    Pulmonary nodules are a potential manifestation of lung cancer, and their early detection can remarkably enhance the survival rate of patients. This paper presents an automated pulmonary nodule detection algorithm for lung CT images. The algorithm utilizes a two-stage approach comprising nodule candidate detection followed by reduction of false positives. The nodule candidate detection involves thresholding, followed by morphological opening. The geometrical features at this stage are selected from properties of nodule size and compactness, and lead to reduced number of false positives. An SVM classifier is used with a radial basis function kernel. The data imbalance, due to uneven distribution of nodules and non-nodules as a result of the candidate detection stage, is proposed to be addressed by oversampling of minority class using Synthetic Minority Over-sampling Technique (SMOTE), and over-imposition of its misclassification penalty. Experiments were performed on 97 CT scans of a publically-available (LIDC-IDRI) database. Performance is evaluated in terms of sensitivity and false positives per scan (FP/scan). Results indicate noteworthy performance of the proposed approach (nodule detection sensitivity after 4-fold cross-validation is 92.91% with 3 FP/scan). Comparative analysis also reflects a comparable and often better performance of the proposed setup over some of the existing techniques.

  8. VLSI Potentiostat Array With Oversampling Gain Modulation for Wide-Range Neurotransmitter Sensing.

    PubMed

    Stanacevic, M; Murari, K; Rege, A; Cauwenberghs, G; Thakor, N V

    2007-03-01

    A 16-channel current-measuring very large-scale integration (VLSI) sensor array system for highly sensitive electrochemical detection of electroactive neurotransmiters like dopamine and nitric-oxide is presented. Each channel embeds a current integrating potentiostat within a switched-capacitor first-order single-bit delta-sigma modulator implementing an incremental analog-to-digital converter. The duty-cycle modulation of current feedback in the delta-sigma loop together with variable oversampling ratio provide a programmable digital range selection of the input current spanning over six orders of magnitude from picoamperes to microamperes. The array offers 100-fA input current sensitivity at 3.4-muW power consumption per channel. The operation of the 3 mm times3 mm chip fabricated in 0.5-mum CMOS technology is demonstrated with real-time multichannel acquisition of neurotransmitter concentration.

  9. An analog-digital hybrid RX beamformer chip with non-uniform sampling for ultrasound medical imaging with 2D CMUT array.

    PubMed

    Um, Ji-Yong; Kim, Yoon-Jee; Cho, Seong-Eun; Chae, Min-Kyun; Song, Jongkeun; Kim, Baehyung; Lee, Seunghun; Bang, Jihoon; Kim, Youngil; Cho, Kyungil; Kim, Byungsub; Sim, Jae-Yoon; Park, Hong-June

    2014-12-01

    To reduce the memory area, a two-stage RX beamformer (BF) chip with 64 channels is proposed for the ultrasound medical imaging with a 2D CMUT array. The chip retrieved successfully two B-mode phantom images with a steering angle from -45 (°) to +45 (°), the maximum delay range of 8 μs, and the delay resolution of 6.25 ns. An analog-digital hybrid BF (HBF) is chosen for the proposed chip to utilize the easy beamforming operation in the digital domain and also to reduce chip area by minimizing the number of ADCs. The chip consists of eight analog beamformers (ABF) for the 1st-stage and a digital beamformer (DBF) for the 2nd-stage. The two-stage architecture reduces the memory area of both ABF and DBF by around four times. The DBF circuit is divided into three steps to further reduce the digital FIFO memory area by around twice. Coupled with the non-uniform sampling scheme, the proposed two-stage HBF chip reduces the total memory area by around 40 times compared to the uniform-sampling single-stage BF chip. The chip fabricated in a 0.13- μm CMOS process occupies the area of 19.4 mm(2), and dissipates 1.14 W with the analog supply of 3.3 V and the digital supply of 1.2 V.

  10. THE SYNTHETIC-OVERSAMPLING METHOD: USING PHOTOMETRIC COLORS TO DISCOVER EXTREMELY METAL-POOR STARS

    SciTech Connect

    Miller, A. A.

    2015-09-20

    Extremely metal-poor (EMP) stars ([Fe/H] ≤ −3.0 dex) provide a unique window into understanding the first generation of stars and early chemical enrichment of the universe. EMP stars are exceptionally rare, however, and the relatively small number of confirmed discoveries limits our ability to exploit these near-field probes of the first ∼500 Myr after the Big Bang. Here, a new method to photometrically estimate [Fe/H] from only broadband photometric colors is presented. I show that the method, which utilizes machine-learning algorithms and a training set of ∼170,000 stars with spectroscopically measured [Fe/H], produces a typical scatter of ∼0.29 dex. This performance is similar to what is achievable via low-resolution spectroscopy, and outperforms other photometric techniques, while also being more general. I further show that a slight alteration to the model, wherein synthetic EMP stars are added to the training set, yields the robust identification of EMP candidates. In particular, this synthetic-oversampling method recovers ∼20% of the EMP stars in the training set, at a precision of ∼0.05. Furthermore, ∼65% of the false positives from the model are very metal-poor stars ([Fe/H] ≤ −2.0 dex). The synthetic-oversampling method is biased toward the discovery of warm (∼F-type) stars, a consequence of the targeting bias from the Sloan Digital Sky Survey/Sloan Extension for Galactic Understanding survey. This EMP selection method represents a significant improvement over alternative broadband optical selection techniques. The models are applied to >12 million stars, with an expected yield of ∼600 new EMP stars, which promises to open new avenues for exploring the early universe.

  11. Ensemble based adaptive over-sampling method for imbalanced data learning in computer aided detection of microaneurysm.

    PubMed

    Ren, Fulong; Cao, Peng; Li, Wei; Zhao, Dazhe; Zaiane, Osmar

    2017-01-01

    Diabetic retinopathy (DR) is a progressive disease, and its detection at an early stage is crucial for saving a patient's vision. An automated screening system for DR can help in reduce the chances of complete blindness due to DR along with lowering the work load on ophthalmologists. Among the earliest signs of DR are microaneurysms (MAs). However, current schemes for MA detection appear to report many false positives because detection algorithms have high sensitivity. Inevitably some non-MAs structures are labeled as MAs in the initial MAs identification step. This is a typical "class imbalance problem". Class imbalanced data has detrimental effects on the performance of conventional classifiers. In this work, we propose an ensemble based adaptive over-sampling algorithm for overcoming the class imbalance problem in the false positive reduction, and we use Boosting, Bagging, Random subspace as the ensemble framework to improve microaneurysm detection. The ensemble based over-sampling methods we proposed combine the strength of adaptive over-sampling and ensemble. The objective of the amalgamation of ensemble and adaptive over-sampling is to reduce the induction biases introduced from imbalanced data and to enhance the generalization classification performance of extreme learning machines (ELM). Experimental results show that our ASOBoost method has higher area under the ROC curve (AUC) and G-mean values than many existing class imbalance learning methods. Copyright © 2016 Elsevier Ltd. All rights reserved.

  12. Optoelectronics with Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Kinoshita, Megumi

    2011-12-01

    purified tubes aligned in parallel. While the operating principle is somewhat different from that of single-tube diodes because of the presence of metallic tubes in the material, the film diodes nonetheless show a rectifying behavior and much greater light intensity than single-tube devices. With their superior light output and robustness, they bring us one step closer to a real-world application of carbon nanotubes optoelectronics.

  13. Compact Optoelectronic Compass

    NASA Technical Reports Server (NTRS)

    Christian, Carl

    2004-01-01

    A compact optoelectronic sensor unit measures the apparent motion of the Sun across the sky. The data acquired by this chip are processed in an external processor to estimate the relative orientation of the axis of rotation of the Earth. Hence, the combination of this chip and the external processor finds the direction of true North relative to the chip: in other words, the combination acts as a solar compass. If the compass is further combined with a clock, then the combination can be used to establish a threeaxis inertial coordinate system. If, in addition, an auxiliary sensor measures the local vertical direction, then the resulting system can determine the geographic position. This chip and the software used in the processor are based mostly on the same design and operation as those of the unit described in Micro Sun Sensor for Spacecraft (NPO-30867) elsewhere in this issue of NASA Tech Briefs. Like the unit described in that article, this unit includes a small multiple-pinhole camera comprising a micromachined mask containing a rectangular array of microscopic pinholes mounted a short distance in front of an image detector of the active-pixel sensor (APS) type (see figure). Further as in the other unit, the digitized output of the APS in this chip is processed to compute the centroids of the pinhole Sun images on the APS. Then the direction to the Sun, relative to the compass chip, is computed from the positions of the centroids (just like a sundial). In the operation of this chip, one is interested not only in the instantaneous direction to the Sun but also in the apparent path traced out by the direction to the Sun as a result of rotation of the Earth during an observation interval (during which the Sun sensor must remain stationary with respect to the Earth). The apparent path of the Sun across the sky is projected on a sphere. The axis of rotation of the Earth lies at the center of the projected circle on the sphere surface. Hence, true North (not magnetic

  14. Coupled opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Yao, X. Steve (Inventor); Maleki, Lute (Inventor)

    1999-01-01

    A coupled opto-electronic oscillator that directly couples a laser oscillation with an electronic oscillation to simultaneously achieve a stable RF oscillation at a high frequency and ultra-short optical pulsation by mode locking with a high repetition rate and stability. Single-mode selection can be achieved even with a very long opto-electronic loop. A multimode laser can be used to pump the electronic oscillation, resulting in a high operation efficiency. The optical and the RF oscillations are correlated to each other.

  15. A PWM Buck Converter With Load-Adaptive Power Transistor Scaling Scheme Using Analog-Digital Hybrid Control for High Energy Efficiency in Implantable Biomedical Systems.

    PubMed

    Park, Sung-Yun; Cho, Jihyun; Lee, Kyuseok; Yoon, Euisik

    2015-12-01

    We report a pulse width modulation (PWM) buck converter that is able to achieve a power conversion efficiency (PCE) of > 80% in light loads 100 μA) for implantable biomedical systems. In order to achieve a high PCE for the given light loads, the buck converter adaptively reconfigures the size of power PMOS and NMOS transistors and their gate drivers in accordance with load currents, while operating at a fixed frequency of 1 MHz. The buck converter employs the analog-digital hybrid control scheme for coarse/fine adjustment of power transistors. The coarse digital control generates an approximate duty cycle necessary for driving a given load and selects an appropriate width of power transistors to minimize redundant power dissipation. The fine analog control provides the final tuning of the duty cycle to compensate for the error from the coarse digital control. The mode switching between the analog and digital controls is accomplished by a mode arbiter which estimates the average of duty cycles for the given load condition from limit cycle oscillations (LCO) induced by coarse adjustment. The fabricated buck converter achieved a peak efficiency of 86.3% at 1.4 mA and > 80% efficiency for a wide range of load conditions from 45 μA to 4.1 mA, while generating 1 V output from 2.5-3.3 V supply. The converter occupies 0.375 mm(2) in 0.18 μm CMOS processes and requires two external components: 1.2 μF capacitor and 6.8 μH inductor.

  16. Simple Optoelectronic Feedback in Microwave Oscillators

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Iltchenko, Vladimir

    2009-01-01

    A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.

  17. An optoelectronic fuel level sensor

    NASA Astrophysics Data System (ADS)

    Murashkina, T. I.; Badeeva, E. A.; Badeev, A. V.; Savochkina, M. M.

    2017-01-01

    The block and schematic construction diagrams of a new optoelectronic fuel level sensor are considered. The operating principle of the sensor is based on registering the intensity value of the optical path reflected from the mirror, located on the reservoir bottom.

  18. Improving the accuracy of MTF measurement at low frequencies based on oversampled edge spread function deconvolution.

    PubMed

    Zhou, Zhongxing; Gao, Feng; Zhao, Huijuan; Zhang, Lixin; Ren, Liqiang; Li, Zheng; Ghani, Muhammad U; Hao, Ting; Liu, Hong

    2015-01-01

    The modulation transfer function (MTF) of a radiographic system is often evaluated by measuring the system's edge spread function (ESF) using edge device. However, the numerical differentiation procedure of the traditional slanted edge method amplifies noises in the line spread function (LSF) and limits the accuracy of the MTF measurement at low frequencies. The purpose of this study is to improve the accuracy of low-frequency MTF measurement for digital x-ray imaging systems. An edge spread function (ESF) deconvolution technique was developed for MTF measurement based on the degradation model of slanted edge images. Specifically, symmetric oversampled ESFs were constructed by subtracting a shifted version of the ESF from the original one. For validation, the proposed MTF technique was compared with conventional slanted edge method through computer simulations as well as experiments on two digital radiography systems. The simulation results show that the average errors of the proposed ESF deconvolution technique were 0.11% ± 0.09% and 0.23% ± 0.14%, and they outperformed the conventional edge method (0.64% ± 0.57% and 1.04% ± 0.82% respectively) at low-frequencies. On the experimental edge images, the proposed technique achieved better uncertainty performance than the conventional method. As a result, both computer simulation and experiments have demonstrated that the accuracy of MTF measurement at low frequencies can be improved by using the proposed ESF deconvolution technique.

  19. Compact FPGA-based beamformer using oversampled 1-bit A/D converters.

    PubMed

    Tomov, Borislav Gueorguiev; Jensen, Jørgen Arendt

    2005-05-01

    A compact medical ultrasound beamformer architecture that uses oversampled 1-bit analog-to-digital (A/D) converters is presented. Sparse sample processing is used, as the echo signal for the image lines is reconstructed in 512 equidistant focal points along the line through its in-phase and quadrature components. That information is sufficient for presenting a B-mode image and creating a color flow map. The high sampling rate provides the necessary delay resolution for the focusing. The low channel data width (1-bit) makes it possible to construct a compact beamformer logic. The signal reconstruction is done using finite impulse reponse (FIR) filters, applied on selected bit sequences of the delta-sigma modulator output stream. The approach allows for a multichannel beamformer to fit in a single field programmable gate array (FPGA) device. A 32-channel beamformer is estimated to occupy 50% of the available logic resources in a commercially available mid-range FPGA, and to be able to operate at 129 MHz. Simulation of the architecture at 140 MHz provides images with a dynamic range approaching 60 dB for an excitation frequency of 3 MHz.

  20. Anthropogenic Emissions of Highly Reactive Volatile Organic Compounds (HRVOCs) Inferred from Oversampling of OMI HCHO Columns

    NASA Technical Reports Server (NTRS)

    Zhu, Lei; Jacob, Daniel; Mickley, Loretta; Marais, Eloise; Zhang, Aoxing; Cohan, Daniel; Yoshida, Yasuko; Duncan, Bryan; Abad, Gonzalo Gonzalez; Chance, Kelly; DeSmedt, Isabelle

    2014-01-01

    Satellite observations of formaldehyde (HCHO) columns provide top-down constraints on emissions of highly reactive volatile organic compounds (HRVOCs). This approach has been used previously to constrain emissions of isoprene from vegetation, but application to US anthropogenic emissions has been stymied by lack of a discernable HCHO signal. Here we show that oversampling of HCHO data from the Ozone Monitoring Instrument (OMI) for 2005 - 2008 enables quantitative detection of urban and industrial plumes in eastern Texas including Houston, Port Arthur, and Dallas-Fort Worth. By spatially integrating the individual urban-industrial HCHO plumes observed by OMI we can constrain the corresponding HCHO-weighted HRVOC emissions. Application to the Houston plume indicates a HCHO source of 260 plus or minus 110 kmol h-1 and implies a factor of 5.5 plus or minus 2.4 underestimate of anthropogenic HRVOC emissions in the US Environmental Protection Agency inventory. With this approach we are able to monitor the trend in HRVOC emissions over the US, in particular from the oil-gas industry, over the past decade.

  1. Anthropogenic emissions of highly reactive volatile organic compounds inferred from oversampling of OMI HCHO columns

    NASA Astrophysics Data System (ADS)

    Zhu, L.; Jacob, D. J.; Mickley, L. J.; Marais, E. A.; Cohan, D. S.; Yoshida, Y.; Duncan, B. N.; Gonzalez Abad, G.; Chance, K.

    2014-12-01

    Satellite observations of formaldehyde (HCHO) columns provide top-down constraints on emissions of highly reactive volatile organic compounds (HRVOCs). This approach has been used previously to constrain emissions of isoprene from vegetation, but application to US anthropogenic emissions has been stymied by lack of a discernable HCHO signal. Here we show that oversampling of HCHO data from the Ozone Monitoring Instrument (OMI) for 2005-2008 enables quantitative detection of urban and industrial plumes in eastern Texas including Houston, Port Arthur, and Dallas/Fort Worth. By spatially integrating the individual urban/industrial HCHO plumes observed by OMI we can constrain the corresponding HCHO-weighted HRVOC emissions. Application to the Houston plume indicates a HCHO source of 260±110 kmol h-1 and implies a factor of 5.5±2.4 underestimate of anthropogenic HRVOC emissions in the US Environmental Protection Agency inventory. This approach allows us to monitor trends in HRVOC emissions over the US, in particular from the urban areas and oil/gas industry.

  2. Synthetic Minority Oversampling Technique and Fractal Dimension for Identifying Multiple Sclerosis

    NASA Astrophysics Data System (ADS)

    Zhang, Yu-Dong; Zhang, Yin; Phillips, Preetha; Dong, Zhengchao; Wang, Shuihua

    Multiple sclerosis (MS) is a severe brain disease. Early detection can provide timely treatment. Fractal dimension can provide statistical index of pattern changes with scale at a given brain image. In this study, our team used susceptibility weighted imaging technique to obtain 676 MS slices and 880 healthy slices. We used synthetic minority oversampling technique to process the unbalanced dataset. Then, we used Canny edge detector to extract distinguishing edges. The Minkowski-Bouligand dimension was a fractal dimension estimation method and used to extract features from edges. Single hidden layer neural network was used as the classifier. Finally, we proposed a three-segment representation biogeography-based optimization to train the classifier. Our method achieved a sensitivity of 97.78±1.29%, a specificity of 97.82±1.60% and an accuracy of 97.80±1.40%. The proposed method is superior to seven state-of-the-art methods in terms of sensitivity and accuracy.

  3. A design method for high performance seismic data acquisition based on oversampling delta-sigma modulation

    NASA Astrophysics Data System (ADS)

    Gao, Shanghua; Xue, Bing

    2017-04-01

    The dynamic range of the currently most widely used 24-bit seismic data acquisition devices is 10-20 dB lower than that of broadband seismometers, and this can affect the completeness of seismic waveform recordings under certain conditions. However, this problem is not easy to solve because of the lack of analog to digital converter (ADC) chips with more than 24 bits in the market. So the key difficulties for higher-resolution data acquisition devices lie in achieving more than 24-bit ADC circuit. In the paper, we propose a method in which an adder, an integrator, a digital to analog converter chip, a field-programmable gate array, and an existing low-resolution ADC chip are used to build a third-order 16-bit oversampling delta-sigma modulator. This modulator is equipped with a digital decimation filter, thus forming a complete analog to digital converting circuit. Experimental results show that, within the 0.1-40 Hz frequency range, the circuit board's dynamic range reaches 158.2 dB, its resolution reaches 25.99 dB, and its linearity error is below 2.5 ppm, which is better than what is achieved by the commercial 24-bit ADC chips ADS1281 and CS5371. This demonstrates that the proposed method may alleviate or even solve the amplitude-limitation problem that broadband observation systems so commonly have to face during strong earthquakes.

  4. Restricted Boltzmann machines based oversampling and semi-supervised learning for false positive reduction in breast CAD.

    PubMed

    Cao, Peng; Liu, Xiaoli; Bao, Hang; Yang, Jinzhu; Zhao, Dazhe

    2015-01-01

    The false-positive reduction (FPR) is a crucial step in the computer aided detection system for the breast. The issues of imbalanced data distribution and the limitation of labeled samples complicate the classification procedure. To overcome these challenges, we propose oversampling and semi-supervised learning methods based on the restricted Boltzmann machines (RBMs) to solve the classification of imbalanced data with a few labeled samples. To evaluate the proposed method, we conducted a comprehensive performance study and compared its results with the commonly used techniques. Experiments on benchmark dataset of DDSM demonstrate the effectiveness of the RBMs based oversampling and semi-supervised learning method in terms of geometric mean (G-mean) for false positive reduction in Breast CAD.

  5. III-Nitride nanowire optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian

    2015-11-01

    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  6. Optoelectronic assistance for the disabled

    NASA Astrophysics Data System (ADS)

    Minor, Arturo; Almazan, Salvador; Suaste, Ernesto

    1994-06-01

    We show an optoelectronic implementation assistant that will be used by handicapped people. The system works with the head gesture movements of the user. These movements are vectorized with an IR spotlight that is detected by four optocoupled detectors. The information is interpreted and sent to the PC by the serial port. This implementation could be used as a powerful tool between man-machine interaction.

  7. Packaging investigation of optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Zhike, Zhang; Yu, Liu; Jianguo, Liu; Ninghua, Zhu

    2015-10-01

    Compared with microelectronic packaging, optoelectronic packaging as a new packaging type has been developed rapidly and it will play an essential role in optical communication. In this paper, we try to summarize the development history, research status, technology issues and future prospects, and hope to provide a meaningful reference. Project supported by the National High Technology Research and Development Program of China (Nos. 2013AA014201, 2013AA014203) and the National Natural Science Foundation of China (Nos. 61177080, 61335004, 61275031).

  8. Optoelectronic Apparatus Measures Glucose Noninvasively

    NASA Technical Reports Server (NTRS)

    Ansari, Rafat R.; Rovati, Luigi L.

    2003-01-01

    An optoelectronic apparatus has been invented as a noninvasive means of measuring the concentration of glucose in the human body. The apparatus performs polarimetric and interferometric measurements of the human eye to acquire data from which the concentration of glucose in the aqueous humor can be computed. Because of the importance of the concentration of glucose in human health, there could be a large potential market for instruments based on this apparatus.

  9. Nanofabrication of Hybrid Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Dibos, Alan Michael

    The material requirements for optoelectronic devices can vary dramatically depending on the application. Often disparate material systems need to be combined to allow for full device functionality. At the nanometer scale, this can often be challenging because of the inherent chemical and structural incompatibilities of nanofabrication. This dissertation concerns the integration of seemingly dissimilar materials into hybrid optoelectronic devices for photovoltaic, plasmonic, and photonic applications. First, we show that combining a single strip of conjugated polymer and inorganic nanowire can yield a nanoscale solar cell, and modeling of optical absorption and exciton diffusion in this device can provide insight into the efficiency of charge separation. Second, we use an on-chip nanowire light emitting diode to pump a colloidal quantum dot coupled to a silver waveguide. The resulting device is an electro-optic single plasmon source. Finally, we transfer diamond waveguides onto near-field avalanche photodiodes fabricated from GaAs. Embedded in the diamond waveguides are nitrogen vacancy color centers, and the mapping of emission from these single-photon sources is demonstrated using our on-chip detectors, eliminating the need for external photodetectors on an optical table. These studies show the promise of hybrid optoelectronic devices at the nanoscale with applications in alternative energy, optical communication, and quantum optics.

  10. Opto-electronic morphological processor

    NASA Technical Reports Server (NTRS)

    Yu, Jeffrey W. (Inventor); Chao, Tien-Hsin (Inventor); Cheng, Li J. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    The opto-electronic morphological processor of the present invention is capable of receiving optical inputs and emitting optical outputs. The use of optics allows implementation of parallel input/output, thereby overcoming a major bottleneck in prior art image processing systems. The processor consists of three components, namely, detectors, morphological operators and modulators. The detectors and operators are fabricated on a silicon VLSI chip and implement the optical input and morphological operations. A layer of ferro-electric liquid crystals is integrated with a silicon chip to provide the optical modulation. The implementation of the image processing operators in electronics leads to a wide range of applications and the use of optical connections allows cascadability of these parallel opto-electronic image processing components and high speed operation. Such an opto-electronic morphological processor may be used as the pre-processing stage in an image recognition system. In one example disclosed herein, the optical input/optical output morphological processor of the invention is interfaced with a binary phase-only correlator to produce an image recognition system.

  11. Regularization of Mars Reconnaissance Orbiter CRISM along-track oversampled hyperspectral imaging observations of Mars

    NASA Astrophysics Data System (ADS)

    Kreisch, C. D.; O'Sullivan, J. A.; Arvidson, R. E.; Politte, D. V.; He, L.; Stein, N. T.; Finkel, J.; Guinness, E. A.; Wolff, M. J.; Lapôtre, M. G. A.

    2017-01-01

    Mars Reconnaissance Orbiter Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) hyperspectral image data have been acquired in an along-track oversampled (ATO) mode with the intent of processing the data to better than the nominal ∼18 m/pixel ground resolution. We have implemented an iterative maximum log-likelihood method (MLM) that utilizes the instrument spectral and spatial transfer functions and includes a penalty function to regularize the data. Products are produced both in sensor space and as projected hyperspectral image cubes at 12 m/pixel. Preprocessing steps include retrieval of surface single scattering albedos (SSA) using the Hapke Function and DISORT-based radiative modeling of atmospheric gases and aerosols. Resultant SSA cubes are despiked to remove extrema and tested to ensure that the remaining data are Poisson-distributed, an underlying assumption for the MLM algorithm implementation. Two examples of processed ATO data sets are presented. ATO0002EC79 covers the route taken by the Curiosity rover during its initial ascent of Mount Sharp in Gale Crater. SSA data are used to model mineral abundances and grain sizes predicted to be present in the Namib barchan sand dune sampled and analyzed by Curiosity. CRISM based results compare favorably to in situ results derived from Curiosity's measurement campaign. ATO0002DDF9 covers Marathon Valley on the Cape Tribulation rim segment of Endeavour Crater. SSA spectra indicate the presence of a minor component of Fe3+ and Mg2+ smectites on the valley floor and walls. Localization to 12 m/pixel provided the detailed spatial information needed for the Opportunity rover to traverse to and characterize those outcrops that have the deepest absorptions. The combination of orbital and rover-based data show that the smectite-bearing outcrops in Marathon Valley are impact breccias that are basaltic in composition and that have been isochemically altered in a low water to rock environment.

  12. Smectites in the Rim of Endeavour Crater, Mars, Detected Using Along-Track Oversampled CRISM Observations

    NASA Astrophysics Data System (ADS)

    Fox, V. K.; Arvidson, R. E.; Squyres, S. W.; Murchie, S. L.

    2014-12-01

    Smectite minerals in the rim of the Noachian aged Endeavour Crater demonstrate that aqueous alteration under relatively mild acidity and oxidation potential was a pervasive process, probably in early Martian history. Reflectance spectra retrieved from along-track oversampled Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) observations have been key in directing the Opportunity rover to relatively small outcrops with smectite signatures. CRISM I/F data were converted to single scattering albedo (SSA) using the radiative code package DISORT to best identify subtle smectite absorption features without dependence on column ratios or assumed atmospheric transmission spectra. Scattering and absorption by atmospheric dust and ice aerosols are modeled from first principles, and CO2, CO and water vapor absorptions are modeled as a function of atmospheric column mass. Surface scattering assumes a Hapke surface model with a modestly backscattering single particle phase function. Whereas SSA values are retrieved from 0.4 to 2.65 μm, we primarily consider the 2.1 and 2.5 μm region. Metal-OH combination absorptions are clearly evident on Mars at these wavelengths and are characteristic of smectites. Spectral noise in this region is minimized by both instrumental and physical factors. Shallow absorptions at 2.3 and 2.4 μm, indicating Fe and Mg bearing smectites, were detected in the floor of Marathon Valley, on the western edge of Endeavour Crater, and were evident in several overlapping CRISM observations. Exploration of these outcrops by Opportunity establishes the geologic context and paleoenvironmental conditions associated with the formation of the smectites. Al-bearing smectites are also detected in several scenes over the western rim of Endeavour, particularly in sun-facing and soil-free outcrops.

  13. Oversampling smoothness: an effective algorithm for phase retrieval of noisy diffraction intensities.

    PubMed

    Rodriguez, Jose A; Xu, Rui; Chen, Chien-Chun; Zou, Yunfei; Miao, Jianwei

    2013-04-01

    Coherent diffraction imaging (CDI) is high-resolution lensless microscopy that has been applied to image a wide range of specimens using synchrotron radiation, X-ray free-electron lasers, high harmonic generation, soft X-ray lasers and electrons. Despite recent rapid advances, it remains a challenge to reconstruct fine features in weakly scattering objects such as biological specimens from noisy data. Here an effective iterative algorithm, termed oversampling smoothness (OSS), for phase retrieval of noisy diffraction intensities is presented. OSS exploits the correlation information among the pixels or voxels in the region outside of a support in real space. By properly applying spatial frequency filters to the pixels or voxels outside the support at different stages of the iterative process (i.e. a smoothness constraint), OSS finds a balance between the hybrid input-output (HIO) and error reduction (ER) algorithms to search for a global minimum in solution space, while reducing the oscillations in the reconstruction. Both numerical simulations with Poisson noise and experimental data from a biological cell indicate that OSS consistently outperforms the HIO, ER-HIO and noise robust (NR)-HIO algorithms at all noise levels in terms of accuracy and consistency of the reconstructions. It is expected that OSS will find application in the rapidly growing CDI field, as well as other disciplines where phase retrieval from noisy Fourier magnitudes is needed. The MATLAB (The MathWorks Inc., Natick, MA, USA) source code of the OSS algorithm is freely available from http://www.physics.ucla.edu/research/imaging.

  14. Small Molecule Organic Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Bakken, Nathan

    Organic optoelectronics include a class of devices synthesized from carbon containing 'small molecule' thin films without long range order crystalline or polymer structure. Novel properties such as low modulus and flexibility as well as excellent device performance such as photon emission approaching 100% internal quantum efficiency have accelerated research in this area substantially. While optoelectronic organic light emitting devices have already realized commercial application, challenges to obtain extended lifetime for the high energy visible spectrum and the ability to reproduce natural white light with a simple architecture have limited the value of this technology for some display and lighting applications. In this research, novel materials discovered from a systematic analysis of empirical device data are shown to produce high quality white light through combination of monomer and excimer emission from a single molecule: platinum(II) bis(methyl-imidazolyl)toluene chloride (Pt-17). Illumination quality achieved Commission Internationale de L'Eclairage (CIE) chromaticity coordinates (x = 0.31, y = 0.38) and color rendering index (CRI) > 75. Further optimization of a device containing Pt-17 resulted in a maximum forward viewing power efficiency of 37.8 lm/W on a plain glass substrate. In addition, accelerated aging tests suggest high energy blue emission from a halogen-free cyclometalated platinum complex could demonstrate degradation rates comparable to known stable emitters. Finally, a buckling based metrology is applied to characterize the mechanical properties of small molecule organic thin films towards understanding the deposition kinetics responsible for an elastic modulus that is both temperature and thickness dependent. These results could contribute to the viability of organic electronic technology in potentially flexible display and lighting applications. The results also provide insight to organic film growth kinetics responsible for optical

  15. Integrated Optoelectronics for Parallel Microbioanalysis

    NASA Technical Reports Server (NTRS)

    Stirbl, Robert; Moynihan, Philip; Bearman, Gregory; Lane, Arthur

    2003-01-01

    Miniature, relatively inexpensive microbioanalytical systems ("laboratory-on-achip" devices) have been proposed for the detection of hazardous microbes and toxic chemicals. Each system of this type would include optoelectronic sensors and sensor-output-processing circuitry that would simultaneously look for the optical change, fluorescence, delayed fluorescence, or phosphorescence signatures from multiple redundant sites that have interacted with the test biomolecules in order to detect which one(s) was present in a given situation. These systems could be used in a variety of settings that could include doctors offices, hospitals, hazardous-material laboratories, biological-research laboratories, military operations, and chemical-processing plants.

  16. Semiconductor–superconductor optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Bouscher, Shlomi; Panna, Dmitry; Hayat, Alex

    2017-10-01

    Devices combining superconductors with semiconductors offer a wide range of applications, particularly in the growing field of quantum information processing. This is due to their ability to take advantage of both the extensive knowledge gathered in the field of semiconductors and the unique quantum properties of superconductors. This results in novel device concepts, such as structures generating and detecting entangled photon pairs as well as novel optical gain and laser realizations. In this review, we discuss the fundamental concepts and the underlying physical phenomena of superconductor–semiconductor optoelectronics as well as practical device implementations.

  17. Optoelectronic tweezers for medical diagnostics

    NASA Astrophysics Data System (ADS)

    Kremer, Clemens; Neale, Steven; Menachery, Anoop; Barrett, Mike; Cooper, Jonathan M.

    2012-01-01

    Optoelectronic tweezers (OET) allows the spatial patterning of electric fields through selected illumination of a photoconductive surface. This enables the manipulation of micro particles and cells by creating non-uniform electrical fields that then produce dielectrophoretic (DEP) forces. The DEP responses of cells differ and can produce negative or positive (repelled or attracted to areas of high electric field) forces. Therefore OET can be used to manipulate individual cells and separate different cell types from each other. Thus OET has many applications for medical diagnostics, demonstrated here with work towards diagnosing Human African Trypanosomiasis, also known as sleeping sickness.

  18. Thermal characterization abstraction for integrated optoelectronics

    NASA Astrophysics Data System (ADS)

    Schlitt, Lawrence M.

    Advances in silicon photonics are enabling hybrid integration of optoelectronic circuits alongside current complementary metal-oxide-semiconductor (CMOS) technologies. To fully exploit the capability of this integration, it is important to explore the effects of thermal gradients on optoelectronic devices. The sensitivity of optical components to temperature variation gives rise to design issues in silicon on insulator (SOI) optoelectronic technology. The thermo-electric effect becomes problematic with the integration of hybrid optoelectronic systems, where heat is generated from electrical components. Through the thermo-optic effect, the optical signals are in turn affected and compensation is necessary. To improve the capability of optical SOI designs, optical-wave-simulation models and the characteristic thermal operating environment need to be integrated to ensure proper operation. In order to exploit the potential for compensation by virtue of resynthesis, temperature characterization on a system level is required. Thermal characterization within the flow of physical design automation tools for hybrid optoelectronic technology enables device resynthesis and validation at a system level. Additionally, thermally-aware routing and placement would be possible. A simplified abstraction will help in the active design process, within the contemporary computer-aided design (CAD) flow when designing optoelectronic features. This thesis investigates an abstraction model to characterize the effect of a temperature gradient on optoelectronic circuit operation. To make the approach scalable, reduced order computations are desired that effectively model the effect of temperature on an optoelectronic layout; this is achieved using an electrical analogy to heat flow. Given an optoelectronic circuit, using a thermal resistance network to abstract thermal flow, we compute the temperature distribution throughout the layout. Subsequently, we show how this thermal distribution

  19. Log-Likelihood Method of Reducing Noise in CRISM Along-Track Oversampled Hyperspectral Images

    NASA Astrophysics Data System (ADS)

    Kreisch, C.; Arvidson, R. E.; O'Sullivan, J. A.; Fraeman, A. A.

    2014-12-01

    The Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) began taking Along-Track Oversampled (ATO) observations in 2010 to obtain super-resolution hyperspectral images, with spatial resolutions in the along-track direction of as small as ~5 m/pixel. We present a new method to both process and reduce noise in the ATOs. We developed a log-likelihood algorithm to determine the most likely estimate of the actual Martian surface given the CRISM spectral radiance measurements and spatial and spectral transfer functions (TF). We assume the spatial TF is given by a 2D Gaussian and use the asymmetric Gaussian spectral TF given in the CRISM documentation. The log-likelihood method reduces Poisson noise in the spectrum for a given hyperspectral pixel, allowing for identification of subtle spectral absorptions otherwise lost in noise. We assume that the data are Poisson distributed and that the mean μ is given by a blurred version of the actual scene c. The CRISM ATO is this blurred version. It is more efficient to maximize the log of a function rather than the function itself, so we compute the image c that maximizes the log-likelihood function for the data. We begin with an initial guess for the projected, estimated scene c and have the freedom to choose any reasonable output pixel size. To forward project, we convolve the spatial TF with c and then convolve the spectral TF with the output. The result is a simulation of the measured ATO. We divide the CRISM ATO by this simulated scene to obtain the error, and then we backproject the error into dimensions of c by applying transposes of the TFs. Finally, we update our guess for the actual scene by multiplying c by the backprojected error. We iterate until convergence. We focus our analysis on recent ATOs of Gale Crater to illustrate the advantages of the method. We will also present a combined Poisson and Gaussian noise iterative approach with regularization and results for reducing noise in CRISM data.

  20. New CRISM Along-Track Oversampled Observations and Implications for Spectral Mapping at Fine Spatial Scales

    NASA Astrophysics Data System (ADS)

    Coman, E. I.; Arvidson, R. E.; Stein, N.; Murchie, S. L.; McGovern, A.; Seelos, K. D.; Seelos, F. P.; Humm, D. C.

    2013-12-01

    The Mars Reconnaissance Orbiter (MRO) Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) is a hyperspectral line scanner imaging system (0.362-3.920 micrometers at 6.55 nm/channel) that was designed to acquire targeted images at ~18 m/pixel spatial sampling. Past experiments have shown that by appropriately commanding the gimbal system, CRISM can also collect Along-Track Oversampled (ATO) observations with overlapping pixels that can be sharpened to along-track spatial resolutions as fine as 5 m/pixel. These observations were impossible to sharpen to a constant along-track spatial resolution within scenes because pixel overlap varied significantly due to irregularities in gimbal motion during imaging of targets. A new observational scheme has been implemented in which gimbaling has been adjusted to keep overlap constant, allowing consistent regularization and sharpening across the entire scene. We demonstrate two processing approaches for spatial sharpening of several scenes acquired with the new gimbaling approach. The scenes are: 1. A recent crater with dark ejecta located at 23.7N, 220.1E (areocentric) ATO00029FC9; 2. Layered rocks uplifted in crater near Solis Dorsa located at 23.14N, 281.37E ATO00029F00, and 3. Dikes in Valles Marineris Coprates Chasma located at 15.02N, 306.96 ATO00029EFD. The two methods are Tikhonov damped least squares spatial sharpening implemented in one dimensional and two dimensional schemes. The Tikhonov method for spatial sharpening replaces the overlapping pixels with smaller, regularly spaced pixels by minimizing the sums of squares of deviations between the observed data matrix and a matrix of regularized, smaller-sized pixels premultiplied by the imaging system transfer function, including ground motion smear. A side constraint is introduced to minimize the sums of squares of deviations of first derivatives for the regularized pixel matrix. This side constraint minimizes noise, and the extent of this minimization is

  1. Spatial over-sampling and its influence on spatial resolution for photoacoustic tomography with finite sized detectors

    NASA Astrophysics Data System (ADS)

    Burgholzer, P.; Roitner, H.; Berer, T.; Grün, H.; Nuster, R.; Paltauf, G.; Haltmeier, M.

    2014-03-01

    Detector arrays enable parallel detection for faster photoacoustic imaging than by moving a single detector, but the detector spacing for arrays cannot be smaller than the size of an array element. Spatial over-sampling is scanning with a step-size smaller than the size of the detector element and is possible only for a moving single detector. For a detector with finite sized surface the measured acoustic signal is a spatial average of the pressure field over the detector surface. If the reconstruction is performed assuming point-like detection over-sampling brings no advantage as e.g. for spherical or cylindrical detection surfaces the blurring caused by a finite detector size is proportional to the distance from the rotation center and is equal to the detector size at the detection surface. Iterative reconstruction algorithms or inverting directly the imaging matrix can take the finite size of real detectors directly into account, but the numerical effort is significantly higher compared to direct algorithms assuming point-like detection. Another reconstruction with less numerical effort is to use a direct algorithm assuming point-like detectors and run a deconvolution algorithm for deblurring afterwards. For such reconstruction methods spatial over-sampling makes sense because it reduces the blurring significantly. The effect of step size on the reconstructed image is systematically examined using simulated and experimental data. Experimental data are obtained on a plastisol cylinder with thin holes filled with an absorbing liquid. Data acquisition is done by utilization of a piezoelectric detector (PVDF stripe) which is rotated around the plastisol cylinder.

  2. Optoelectronics with 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Mueller, Thomas

    2015-03-01

    Two-dimensional (2D) atomic crystals, such as graphene and layered transition-metal dichalcogenides, are currently receiving a lot of attention for applications in electronics and optoelectronics. In this talk, I will review our research activities on electrically driven light emission, photovoltaic energy conversion and photodetection in 2D semiconductors. In particular, WSe2 monolayer p-n junctions formed by electrostatic doping using a pair of split gate electrodes, type-II heterojunctions based on MoS2/WSe2 and MoS2/phosphorene van der Waals stacks, 2D multi-junction solar cells, and 3D/2D semiconductor interfaces will be presented. Upon optical illumination, conversion of light into electrical energy occurs in these devices. If an electrical current is driven, efficient electroluminescence is obtained. I will present measurements of the electrical characteristics, the optical properties, and the gate voltage dependence of the device response. In the second part of my talk, I will discuss photoconductivity studies of MoS2 field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photoconductive gain. A model will be presented that reproduces our experimental findings, such as the dependence on optical power and gate voltage. We envision that the efficient photon conversion and light emission, combined with the advantages of 2D semiconductors, such as flexibility, high mechanical stability and low costs of production, could lead to new optoelectronic technologies.

  3. Solid-state optoelectronic devices (Handbook)

    NASA Astrophysics Data System (ADS)

    Ivanov, V. I.; Aksenov, A. I.; Iushin, A. M.

    The principles of operation of solid-state optoelectronic devices are examined, and their main technical characteristics and applications are presented. The devices covered in the book include light-emitting diodes, indicating devices based on light-emitting diodes, infrared radiators, photoreceivers, and optoelectronic microcircuits.

  4. Optoelectronic Applications of Colloidal Quantum Dots

    NASA Astrophysics Data System (ADS)

    Wang, Zhiping; Zhang, Nanzhu; Brenneman, Kimber; Wu, Tsai Chin; Jung, Hyeson; Biswas, Sushmita; Sen, Banani; Reinhardt, Kitt; Liao, Sicheng; Stroscio, Michael A.; Dutta, Mitra

    This chapter highlights recent optoelectronic applications of colloidal quantum dots (QDs). In recent years, many colloidal QD-based optoelectronic devices, and device concepts have been proposed and studied. Many of these device concepts build on traditional optoelectronic device concepts. Increasingly, many new optoelectronic device concepts have been based on the use of biomolecule QD complexes. In this chapter, both types of structures are discussed. Special emphasis is placed on new optoelectronic device concepts that incorporate DNA-based aptamers in biomolecule QD complexes. Not only are the extensions of traditional devices and concepts realizable, such as QD-based photo detectors, displays, photoluminescent and photovoltaic devices, light-emitting diodes (LEDs), photovoltaic devices, and solar cells, but new devices concepts such a biomolecule-based molecular sensors possible. This chapter highlights a number of such novel QD-based devices and device concepts.

  5. Optoelectronic Particle-Fallout Sensor

    NASA Technical Reports Server (NTRS)

    Ihlefeld, Curtis; Mogan, Paul A.; Youngquist, Robert C.; Moerk, John S.; Haskell, William D.; Cox, Robert B.; Rose, Kenneth A.

    1995-01-01

    Portable optoelectronic system monitors fallout of small particles (dust and fibers) onto surface at given location during extended time. Data on accumulated fallout downloaded from system to computer for display and analysis. Typical display is plot of signal proportional to amount of accumulated fallout as function of time and read to determine when contamination occurs. In many cases, possible to establish correlations between accumulations of particles and activities in vicinity. Also capable of signaling alarm in event contamination by fallout exceeds specified level. System made very inexpensively and used to monitor accumulation of dust and fibers associated with motion of air in variety of environments. Phenomena monitored indirectly by use of system might include circulation of air in buildings, and human and animal activity. Also serves as auxiliary intrusion monitor (though probably not real-time alarm) in sealed room because motion of intruder inevitably stirs up some dust.

  6. Oversampling as a methodological strategy for the study of self-reported health among lesbian, gay and bisexual populations.

    PubMed

    Anderssen, Norman; Malterud, Kirsti

    2017-08-01

    Epidemiological research on lesbian, gay and bisexual populations raises concerns regarding self-selection and group sizes. The aim of this research was to present strategies used to overcome these challenges in a national population-based web survey of self-reported sexual orientation and living conditions-exemplified with a case of daily tobacco smoking. The sample was extracted from pre-established national web panels. Utilizing an oversampling strategy, we established a sample including 315 gay men, 217 bisexual men, 789 heterosexual men, 197 lesbian women, 405 bisexual women and 979 heterosexual women. We compared daily smoking, representing three levels of differentiation of sexual orientation for each gender. The aggregation of all non-heterosexuals into one group yielded a higher odds ratio (OR) for non-heterosexuals being a daily smoker. The aggregation of lesbian and bisexual women indicated higher OR between this group and heterosexual women. The full differentiation yielded no differences between groups except for bisexual compared with heterosexual women. The analyses demonstrated the advantage of differentiation of sexual orientation and gender, in this case bisexual women were the main source of group differences. We recommend an oversampling procedure, making it possible to avoid self-recruitment and to increase the transferability of findings.

  7. A review of ultrafast optics and optoelectronics

    NASA Astrophysics Data System (ADS)

    Steinmeyer, Günter

    2003-01-01

    The speed of optoelectronic devices is normally limited by the components used on the electronic side of the device. The direct generation of short light pulses from short current pulses, for example, is limited by the speed of an electronic pulse generator or the response time of a laser diode. These electronic bandwidth limitations can be overcome by switching to indirect schemes. These schemes use optical means, whenever bandwidth is an issue. This is combined with much slower optoelectronic technology, bringing together the inherent speed of all-optical approaches and the virtues of standard optoelectronics. Apart from the generation of short pulses, we will also address their detection and characterization, their modulation, and transmission effects. These methods carry the functionality of optoelectronics from a temporal resolution of a few picoseconds well into the femtosecond range.

  8. Opto-Electronic Oscillator and its Applications

    NASA Technical Reports Server (NTRS)

    Yao, X. S.; Maleki, L.

    1996-01-01

    We present the theoretical and experimental results of a new class of microwave oscillators called opto-electronic oscillators (OEO). We discuss techniques of achieving high stability single mode operation and demonstrate the applications of OEO in photonic communication systems.

  9. Nano-Optoelectronic Integration on Silicon

    DTIC Science & Technology

    2012-12-14

    Nano -Optoelectronic Integration on Silicon Roger Chen Electrical Engineering and Computer Sciences University of California at Berkeley Technical...COVERED 00-00-2012 to 00-00-2012 4. TITLE AND SUBTITLE Nano -Optoelectronic Integration on Silicon 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM...silicon under conditions that are compatible with the process constraints of CMOS technology. This dissertation will present a variety of nano

  10. Transparent heat-spreader for optoelectronic applications

    DOEpatents

    Minano, Juan Carlos; Benitez, Pablo

    2014-11-04

    An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

  11. Radiation effects in optoelectronic devices. [Review

    SciTech Connect

    Barnes, C.E.; Wiczer, J.J.

    1984-05-01

    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given.

  12. Metal oxides for optoelectronic applications.

    PubMed

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  13. Metal oxides for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  14. Metamaterial mirrors in optoelectronic devices.

    PubMed

    Esfandyarpour, Majid; Garnett, Erik C; Cui, Yi; McGehee, Michael D; Brongersma, Mark L

    2014-07-01

    The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror (φ = π) to that of a perfect magnetic mirror (φ = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band.

  15. Test system design used to characterize and test the MOSAD technology multiplexed oversampled A/D all-digital FPA

    NASA Astrophysics Data System (ADS)

    Braathen, Jan M.

    1998-07-01

    The MOSAD, Multiplexed Oversampled Analog to Digital conversion approach at Amain Electronics research center, introduces an extremely low power on focal plane analog to digital conversion at each pixel site. The MOSAD technology has been tested and characterized for different focal plane array sizes. This approach has demonstrated superior linearity, well capacity and signal to noise ratio, which exceeds existing A/D capabilities, by eliminating all analog multiplexing and readout electronics off focal plane. This document describes the design, characterization and testing methodology to satisfy the variety of requirements for the readout interface to the MOSAD technology. The necessary readout interface electronics used to validate the MOSAD technology with Dewar assembly is presented. Results from the testing performance considerations such as signal to noise ratio are discussed. Amain Electronics test methodology considerations are described to show that an all digital focal plane array simplifies the future FPA test complexity and methodology.

  16. The analysis of indexed astronomical time series - XII. The statistics of oversampled Fourier spectra of noise plus a single sinusoid

    NASA Astrophysics Data System (ADS)

    Koen, Chris

    2015-10-01

    With few exceptions, theoretical studies of periodogram properties focus on pure noise time series. This paper considers the case in which the time series consists of noise together with a single sinusoid, observed at regularly spaced time points. The distribution of the periodogram ordinates in this case is shown to be of exponentially modified Gaussian form. Simulations are used to demonstrate that if the periodogram is substantially oversampled (i.e. calculated in a dense grid of frequencies), then the distribution of the periodogram maxima can be accurately approximated by a simple form (at least at moderate signal-to-noise ratios). This result can be used to derive a calculation formula for the probability of correct signal frequency identification at given values of the time series length and (true) signal-to-noise ratio. A set of curves is presented which can be used to apply the theory to, for example, asteroseismic data. An illustrative application to Kepler data is given.

  17. Optoelectronic microdevices for combined phototherapy

    NASA Astrophysics Data System (ADS)

    Zharov, Vladimir P.; Menyaev, Yulian A.; Hamaev, V. A.; Antropov, G. M.; Waner, Milton

    2000-03-01

    In photomedicine in some of cases radiation delivery to local zones through optical fibers can be changed for the direct placing of tiny optical sources like semiconductor microlasers or light diodes in required zones of ears, nostrils, larynx, nasopharynx cochlea or alimentary tract. Our study accentuates the creation of optoelectronic microdevices for local phototherapy and functional imaging by using reflected light. Phototherapeutic micromodule consist of the light source, microprocessor and miniature optics with different kind of power supply: from autonomous with built-in batteries to remote supply by using pulsed magnetic field and supersmall coils. The developed prototype photomodule has size (phi) 8X16 mm and work duration with built-in battery and light diode up several hours at the average power from several tenths of mW to few mW. Preliminary clinical tests developed physiotherapeutic micrimodules in stomatology for treating the inflammation and in otolaryngology for treating tonsillitis and otitis are presented. The developed implanted electro- optical sources with typical size (phi) 4X0,8 mm and with remote supply were used for optical stimulation of photosensitive retina structure and electrostimulation of visual nerve. In this scheme the superminiature coil with 30 electrical integrated levels was used. Such devices were implanted in eyes of 175 patients with different vision problems during clinical trials in Institute of Eye's Surgery in Moscow. For functional imaging of skin layered structure LED arrays coupled photodiodes arrays were developed. The possibilities of this device for study drug diffusion and visualization small veins are discussed.

  18. Polymer light harvesting composites for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Sun, Sam-Shajing; Wang, Dan

    2015-09-01

    Polymer based optoelectronic composites and thin film devices exhibit great potential in space applications due to their lightweight, flexible shape, high photon absorption coefficients, and robust radiation tolerance in space environment. Polymer/dye composites appear promising for optoelectronics applications due to potential enhancements in both light harvesting and charge separation. In this study, the optoelectronic properties of a series of molecular dyes paired with a conjugated polymer Poly(3-hexylthiophene-2,5-diyl) (P3HT) were investigated. Specifically, the solution PL quenching coefficients (Ksv) of dye/polymer follows a descending order from dyes of Chloro(protoporphyrinato)iron(III) (Hemin), Protoporphyrin, to meso-Tetra(4-carboxyphenyl)porphine (TCPP). In optoelectronic devices made of the P3HT/dye/PCBM composites, the short circuit current densities Jsc as well as the overall power conversion efficiencies (PCE) also follow a descending order from Hemin, Protoporphyrin, to TCPP, despite Hemin exhibits the intermediate polymer/dye LUMO (lowest unoccupied molecular orbital) offset and lowest absorption coefficient as compared to the other two dyes, i.e., the cell optoelectronic efficiency did not follow the LUMO offsets which are the key driving forces for the photo induced charge separations. This study reveals that too large LUMO offset or electron transfer driving force may result in smaller PL quenching and optoelectronic conversion efficiency, this could be another experimental evidence for the Marcus electron transfer model, particularly for the Marcus `inverted region'. It appears an optimum electron transfer driving force or strong PL quenching appears more critical than absorption coefficient for optoelectronic conversion devices.

  19. Bio-inspired networks for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Han, Bing; Huang, Yuanlin; Li, Ruopeng; Peng, Qiang; Luo, Junyi; Pei, Ke; Herczynski, Andrzej; Kempa, Krzysztof; Ren, Zhifeng; Gao, Jinwei

    2014-11-01

    Modern optoelectronics needs development of new materials characterized not only by high optical transparency and electrical conductivity, but also by mechanical strength, and flexibility. Recent advances employ grids of metallic micro- and nanowires, but the overall performance of the resulting material composites remains unsatisfactory. In this work, we propose a new strategy: application of natural scaffoldings perfected by evolution. In this context, we study two bio-inspired networks for two specific optoelectronic applications. The first network, intended for solar cells, light sources and similar devices, has a quasi-fractal structure and is derived directly from a chemically extracted leaf venation system. The second network is intended for touch screens and flexible displays, and is obtained by metalizing a spider’s silk web. We demonstrate that each of these networks attain an exceptional optoelectonic and mechanical performance for its intended purpose, providing a promising direction in the development of more efficient optoelectronic devices.

  20. Perovskite Materials: Solar Cell and Optoelectronic Applications

    SciTech Connect

    Yang, Bin; Geohegan, David B; Xiao, Kai

    2017-01-01

    Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure, and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.

  1. Bio-inspired networks for optoelectronic applications.

    PubMed

    Han, Bing; Huang, Yuanlin; Li, Ruopeng; Peng, Qiang; Luo, Junyi; Pei, Ke; Herczynski, Andrzej; Kempa, Krzysztof; Ren, Zhifeng; Gao, Jinwei

    2014-11-28

    Modern optoelectronics needs development of new materials characterized not only by high optical transparency and electrical conductivity, but also by mechanical strength, and flexibility. Recent advances employ grids of metallic micro- and nanowires, but the overall performance of the resulting material composites remains unsatisfactory. In this work, we propose a new strategy: application of natural scaffoldings perfected by evolution. In this context, we study two bio-inspired networks for two specific optoelectronic applications. The first network, intended for solar cells, light sources and similar devices, has a quasi-fractal structure and is derived directly from a chemically extracted leaf venation system. The second network is intended for touch screens and flexible displays, and is obtained by metalizing a spider's silk web. We demonstrate that each of these networks attain an exceptional optoelectonic and mechanical performance for its intended purpose, providing a promising direction in the development of more efficient optoelectronic devices.

  2. A new optoelectronic reversible storage medium (Review)

    NASA Astrophysics Data System (ADS)

    Basov, N. G.; Plotnikov, A. F.; Popov, Iu. M.; Seleznev, V. N.

    1987-03-01

    The characteristics of reversible storage media designed for optical data recording (such as thermomagnetic media used in disk storages) are analyzed. Consideration is given to a new class of optoelectronic media based on MNOS structures. It is shown that the data recording density in these media can reach 100,000 bit/sq mm and that the energy of the light pulse which controls the recording will not exceed 10 to the -12th J. The use of these media broadens the possibilities for optical programming and redundancy. The data exchange rate in the optoelectronic memory can reach 10 to the 11th bit/s.

  3. Dual-scale topology optoelectronic processor.

    PubMed

    Marsden, G C; Krishnamoorthy, A V; Esener, S C; Lee, S H

    1991-12-15

    The dual-scale topology optoelectronic processor (D-STOP) is a parallel optoelectronic architecture for matrix algebraic processing. The architecture can be used for matrix-vector multiplication and two types of vector outer product. The computations are performed electronically, which allows multiplication and summation concepts in linear algebra to be generalized to various nonlinear or symbolic operations. This generalization permits the application of D-STOP to many computational problems. The architecture uses a minimum number of optical transmitters, which thereby reduces fabrication requirements while maintaining area-efficient electronics. The necessary optical interconnections are space invariant, minimizing space-bandwidth requirements.

  4. Opto-electronic oscillators having optical resonators

    NASA Technical Reports Server (NTRS)

    Yao, Xiaotian Steve (Inventor); Maleki, Lutfollah (Inventor); Ilchenko, Vladimir (Inventor)

    2003-01-01

    Systems and techniques of incorporating an optical resonator in an optical part of a feedback loop in opto-electronic oscillators. This optical resonator provides a sufficiently long energy storage time and hence to produce an oscillation of a narrow linewidth and low phase noise. Certain mode matching conditions are required. For example, the mode spacing of the optical resonator is equal to one mode spacing, or a multiplicity of the mode spacing, of an opto-electronic feedback loop that receives a modulated optical signal and to produce an electrical oscillating signal.

  5. Optoelectronic semiconductor device and method of fabrication

    SciTech Connect

    Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Fan, Shanhui; Yu, Zongfu

    2014-11-25

    An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

  6. Cellular-level mass spectrometry imaging using infrared matrix-assisted laser desorption electrospray ionization (IR-MALDESI) by oversampling.

    PubMed

    Nazari, Milad; Muddiman, David C

    2015-03-01

    Mass spectrometry imaging (MSI) allows for the direct and simultaneous analysis of the spatial distribution of molecular species from sample surfaces such as tissue sections. One of the goals of MSI is monitoring the distribution of compounds at the cellular resolution in order to gain insights about the biology that occurs at this spatial level. Infrared matrix-assisted laser desorption electrospray ionization (IR-MALDESI) imaging of cervical tissue sections was performed using a spot-to-spot distance of 10 μm by utilizing the method of oversampling, where the target plate is moved by a distance that is less than the desorption radius of the laser. In addition to high spatial resolution, high mass accuracy (±1 ppm) and high mass resolving power (140,000 at m/z = 200) were achieved by coupling the IR-MALDESI imaging source to a hybrid quadrupole Orbitrap mass spectrometer. Ion maps of cholesterol in tissues were generated from voxels containing <1 cell, on average. Additionally, the challenges of imaging at the cellular level in terms of loss of sensitivity and longer analysis time are discussed.

  7. High-accuracy fourier transform interferometry, without oversampling, with a 1-bit analog-to-digital converter.

    PubMed

    Daria, V R; Saloma, C

    2000-01-01

    We demonstrate a new technique for performing accurate Fourier transform interferometry with a 1-bit analog-to-digital (AD) converter that does not require oversampling of the interferogram, unlike in other 1-bit coding schemes that rely on delta-sigma modulation. Sampling aims at locating the intersections {z(i)} of the modulation term s(z) of the interferogram and a reference sinusoid r(z) = A cos(2pif(r)z), where z is the optical path difference. A new autocorrelation-based procedure that includes the accurate recovery of the equally sampled amplitude representation {s(k)} of s(z) from {z(i)} is utilized to calculate the square of the emission spectrum of the light source (sample). The procedure is suitable for interferograms that are corrupted with additive noise. Sinusoid-crossing sampling satisfies the Nyquist sampling criterion, and a z(i) exists within each sampling interval Delta = 1/2f(r), if A >or= |s(z)| for all z, and f(r) >or= f(c), where f(c) is the highest frequency component of s(z). By locating a crossing at an accuracy of 1 part in 2(16), we determine the multimode spectrum of an argon-ion laser with a 1-bit AD converter that performs like a 13-bit amplitude-sampling AD converter.

  8. Optoelectronic Inner-Product Neural Associative Memory

    NASA Technical Reports Server (NTRS)

    Liu, Hua-Kuang

    1993-01-01

    Optoelectronic apparatus acts as artificial neural network performing associative recall of binary images. Recall process is iterative one involving optical computation of inner products between binary input vector and one or more reference binary vectors in memory. Inner-product method requires far less memory space than matrix-vector method.

  9. Efficient Optoelectronics Teaching in Undergraduate Engineering Curriculum

    ERIC Educational Resources Information Center

    Matin, M. A.

    2005-01-01

    The Engineering Department's vision for undergraduate education for the next century is to develop a set of laboratory experiences that are thoughtfully sequenced and integrated to promote the full development of students in all courses. Optoelectronics is one of the most important and most demanding courses in Electrical and Computer Engineering.…

  10. Optoelectronic Integrated Circuits For Neural Networks

    NASA Technical Reports Server (NTRS)

    Psaltis, D.; Katz, J.; Kim, Jae-Hoon; Lin, S. H.; Nouhi, A.

    1990-01-01

    Many threshold devices placed on single substrate. Integrated circuits containing optoelectronic threshold elements developed for use as planar arrays of artificial neurons in research on neural-network computers. Mounted with volume holograms recorded in photorefractive crystals serving as dense arrays of variable interconnections between neurons.

  11. Silicon photomultiplier-based optoelectronic mixing

    NASA Astrophysics Data System (ADS)

    Yishuo, Song; Xiaoping, Du; Zhaoyang, Zeng; Shengjun, Wang

    2013-09-01

    Silicon photomultiplier (SiPM)-based optoelectronic mixing (OEM) is studied for the first time. The validity of SiPM-based OEM is experimentally verified. Compared with the avalanche photodiodes-based OEM, the SiPM-based OEM is less noisy and easy to realize for its low voltage operation and high responsivity.

  12. Optoelectronic Shaft-Angle Encoder Tolerates Misalignments

    NASA Technical Reports Server (NTRS)

    Osborne, Eric P.

    1991-01-01

    Optoelectronic shaft-angle encoder measures angle of rotation of shaft with high precision while minimizing effects of eccentricity and other misalignments. Grooves on disk serve as reference marks to locate reading heads and measure increments of rotation of disk. Shaft-angle encoder, resembling optical compact-disk drive, includes two tracking heads illuminating grooves on disk and measures reflections from them.

  13. Thin-Film Optoelectronic Circuits Research Program.

    DTIC Science & Technology

    1987-04-01

    cost basis with digital electronics, monolithic optoelectronic integration will be required. Optical waveguides, switches, modulators , sources and... modulators , delta-beta electra-optic switches, and integrated GaAs photodetectors. - 20. DISTRIBUTION ,AVAILABILITV OF ABSTRACT 121 ABSTRACT SECURITY...Section I INTRODUCTION STATEMENT OF THE PROBLEM 3 Monolithic integration of electronic circuits in silicon has made possible a revolution in electronic

  14. Ferroelectric/Optoelectronic Memory/Processor

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita; Thakoor, Anilkumar P.

    1992-01-01

    Proposed hybrid optoelectronic nonvolatile analog memory and data processor comprises planar array of microscopic photosensitive ferroelectric capacitors performing massively parallel analog computations. Processors overcome electronic crosstalk and limitations on number of input/output contacts inherent in electronic implementations of large interconnection arrays. Used in general optical computing, recognition of patterns, and artificial neural networks.

  15. Using optoelectronic sensors in the system PROTEUS

    NASA Astrophysics Data System (ADS)

    Zyczkowski, M.; Szustakowski, M.; Ciurapinski, W.; Piszczek, M.

    2010-10-01

    The paper presents the concept of optoelectronic devices for human protection in rescue activity. The system consists of an ground robots with predicted sensor. The multisensor construction of the system ensures significant improvement of security of using on-situ like chemical or explosive sensors. The article show a various scenario of use for individual sensor in system PROTEUS.

  16. Efficient Optoelectronics Teaching in Undergraduate Engineering Curriculum

    ERIC Educational Resources Information Center

    Matin, M. A.

    2005-01-01

    The Engineering Department's vision for undergraduate education for the next century is to develop a set of laboratory experiences that are thoughtfully sequenced and integrated to promote the full development of students in all courses. Optoelectronics is one of the most important and most demanding courses in Electrical and Computer Engineering.…

  17. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  18. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY

    2011-11-01

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  19. Influence of the Laser Spot Size, Focal Beam Profile, and Tissue Type on the Lipid Signals Obtained by MALDI-MS Imaging in Oversampling Mode

    NASA Astrophysics Data System (ADS)

    Wiegelmann, Marcel; Dreisewerd, Klaus; Soltwisch, Jens

    2016-12-01

    To improve the lateral resolution in matrix-assisted laser desorption/ionization mass spectrometry imaging (MALDI-MSI) beyond the dimensions of the focal laser spot oversampling techniques are employed. However, few data are available on the effect of the laser spot size and its focal beam profile on the ion signals recorded in oversampling mode. To investigate these dependencies, we produced 2 times six spots with dimensions between 30 and 200 μm. By optional use of a fundamental beam shaper, square flat-top and Gaussian beam profiles were compared. MALDI-MSI data were collected using a fixed pixel size of 20 μm and both pixel-by-pixel and continuous raster oversampling modes on a QSTAR mass spectrometer. Coronal mouse brain sections coated with 2,5-dihydroxybenzoic acid matrix were used as primary test systems. Sizably higher phospholipid ion signals were produced with laser spots exceeding a dimension of 100 μm, although the same amount of material was essentially ablated from the 20 μm-wide oversampling pixel at all spot size settings. Only on white matter areas of the brain these effects were less apparent to absent. Scanning electron microscopy images showed that these findings can presumably be attributed to different matrix morphologies depending on tissue type. We propose that a transition in the material ejection mechanisms from a molecular desorption at large to ablation at smaller spot sizes and a concomitant reduction in ion yields may be responsible for the observed spot size effects. The combined results indicate a complex interplay between tissue type, matrix crystallization, and laser-derived desorption/ablation and finally analyte ionization.

  20. Terahertz optoelectronics with surface plasmon polariton diode.

    PubMed

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  1. Optoelectronic Effect in Laser Transmitter Modules

    NASA Astrophysics Data System (ADS)

    Luc, V. V.; Mien, V. D.; Eliseev, P. G.

    2001-04-01

    Optoelectronic signals in laser transmitter modules based on the voltage saturation effect of laser diode have been experimentally studied for the GaAlAs/GaAs (λ = 830 nm) and InGaAsP/InP (λ= 1310 nm) structures. The behavior of the observed optoelectronic signals has been explained as the changing of the relative position of carrier quazi-Fermi levels. The experimental method for definition of the density inversion threshold in the active region of laser diodes has been established as well as the active region internal gain has been measured. These results give the possibility of using laser transmitter modules at the same time as an amplifier and optical switch.

  2. Innovative Optoelectronic Materials and Structures Using OMVPE

    DTIC Science & Technology

    1989-10-27

    optoelectronic integrated circuits. The ability to intermix quantum well heterostructures opens the possibility to the fabrication and integration of...year, many accomplishments which focus on quantum well laser de- vices have been realized. For example. progress has been made on incorporating disor...vibrational modes of a single quantum well at room temperature. This is the first report of the non-resonant observation of single quantum well

  3. Innovative Optoelectronic Materials and Structures Using OMVPE

    DTIC Science & Technology

    1991-03-19

    facilities which supports compound semiconductor research activities at Cornell. Finally, key research activities which focus on quantum well laser materials...the fabrication of Optoelectronic Integrated Circuits (OEICs). The ability to intermix quantum well heterostructures opens the possibility to the...non-resonant spectra of single quantum well GRIN-SCH structures were reported at the end of 1989. A continued investigation of other laser designs

  4. Multi-material optoelectronic fiber devices

    NASA Astrophysics Data System (ADS)

    Sorin, F.; Yan, Wei; Volpi, Marco; Page, Alexis G.; Nguyen Dang, Tung; Qu, Y.

    2017-05-01

    The recent ability to integrate materials with different optical and optoelectronic properties in prescribed architectures within flexible fibers is enabling novel opportunities for advanced optical probes, functional surfaces and smart textiles. In particular, the thermal drawing process has known a series of breakthroughs in recent years that have expanded the range of materials and architectures that can be engineered within uniform fibers. Of particular interest in this presentation will be optoelectronic fibers that integrate semiconductors electrically addressed by conducting materials. These long, thin and flexible fibers can intercept optical radiation, localize and inform on a beam direction, detect its wavelength and even harness its energy. They hence constitute ideal candidates for applications such as remote and distributed sensing, large-area optical-detection arrays, energy harvesting and storage, innovative health care solutions, and functional fabrics. To improve performance and device complexity, tremendous progresses have been made in terms of the integrated semiconductor architectures, evolving from large fiber solid-core, to sub-hundred nanometer thin-films, nano-filaments and even nanospheres. To bridge the gap between the optoelectronic fiber concept and practical applications however, we still need to improve device performance and integration. In this presentation we will describe the materials and processing approaches to realize optoelectronic fibers, as well as give a few examples of demonstrated systems for imaging as well as light and chemical sensing. We will then discuss paths towards practical applications focusing on two main points: fiber connectivity, and improving the semiconductor microstructure by developing scalable approaches to make fiber-integrated single-crystal nanowire based devices.

  5. New bridged oligofuran for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Tibaoui, T.; Ayachi, S.; Chemek, M.; Alimi, K.

    2015-05-01

    Based on density functional theory (DFT) calculations, we have investigated the structural and optoelectronic properties of oligofuran (OFu)-bridged systems via useful electron donating groups (>S, >CH2, >SiH2 and >NH) and electron accepting ones (>Cdbnd C(CN)2, >Cdbnd O, >Cdbnd S and >Cdbnd CH2). The results were then discussed and compared with those obtained with the corresponding unbridged form. It was found that the optical band gap of OFu decreases significantly when it is bridged by >NH group arranged through an alternating way with >Cdbnd S or >Cdbnd C(CN)2 group, which gives bridged polyfuran (PFu) with desirable opto-electronic properties. Further, an intra-molecular charge transfer for the systems was undertaken in support of time-dependent DFT (TD-DFT) and semi-empirical ZINDO calculations. In this frame, we have shown that >Cdbnd C(CN)2 and >S bridging groups leads to a new oligomer possessing favorable optoelectronic parameter for its use as an active layer in organic photovoltaic cells.

  6. Intriguing Optoelectronic Properties of Metal Halide Perovskites.

    PubMed

    Manser, Joseph S; Christians, Jeffrey A; Kamat, Prashant V

    2016-11-09

    A new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX3 stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewed with an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CH3NH3PbI3) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2-dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.

  7. Memory and coupling in nanocrystal optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Fairfield, Jessamyn A.

    Optoelectronic devices incorporating semiconducting nanocrystals are promising for many potential applications. Nanocrystals whose size is below the exciton Bohr radius have optical absorption and emission that is tunable with size, due to the quantum confinement of the charge carriers. However, the same confinement that yields these optical properties also makes electrical conduction in a film of nanocrystals occur via tunneling, due to the high energy barrier between nanocrystals. Hence, the extraction of photo-generated charge carriers presents a significant challenge. Several approaches to optimizing the reliability and efficiency of optoelectronic devices using semiconducting nanocrystals are explored herein. Force microscopy is used to investigate charge behavior in nanocrystal films. Plasmonic structures are lithographically defined to enhance electric field and thus charge collection efficiency in two-electrode nanocrystal devices illuminated at plasmonically resonant wavelengths. Graphene substrates are shown to couple electronically with nanocrystal films, improving device conduction while maintaining carrier quantum confinement within the nanocrystal. And finally, the occupancy of charge carrier traps is shown to both directly impact the temperature-dependent photocurrent behavior, and be tunable using a combination of illumination and electric field treatments. Trap population manipulation is robustly demonstrated and verified using a variety of wavelength, intensity, and time-dependent measurements of photocurrent in nanogap nanocrystal devices, emphasizing the importance of measurement history and the possibility of advanced device behavior tuning based on desired operating conditions. Each of these experiments reveals a path toward understanding and optimizing semiconducting nanocrystal optoelectronic devices.

  8. Light Management with Nanostructures for Optoelectronic Devices.

    PubMed

    Leung, Siu-Fung; Zhang, Qianpeng; Xiu, Fei; Yu, Dongliang; Ho, Johnny C; Li, Dongdong; Fan, Zhiyong

    2014-04-17

    Light management is of paramount importance to improve the performance of optoelectronic devices including photodetectors, solar cells, and light-emitting diodes. Extensive studies have shown that the efficiency of these optoelectronic devices largely depends on the device structural design. In the case of solar cells, three-dimensional (3-D) nanostructures can remarkably improve device energy conversion efficiency via various light-trapping mechanisms, and a number of nanostructures were fabricated and exhibited tremendous potential for highly efficient photovoltaics. Meanwhile, these optical absorption enhancement schemes can benefit photodetectors by achieving higher quantum efficiency and photon extraction efficiency. On the other hand, low extraction efficiency of a photon from the emissive layer to outside often puts a constraint on the external quantum efficiency (EQE) of LEDs. In this regard, different designs of device configuration based on nanostructured materials such as nanoparticles and nanotextures were developed to improve the out-coupling efficiency of photons in LEDs under various frameworks such as waveguides, plasmonic theory, and so forth. In this Perspective, we aim to provide a comprehensive review of the recent progress of research on various light management nanostructures and their potency to improve performance of optoelectronic devices including photodetectors, solar cells, and LEDs.

  9. Organic Optoelectronic Materials: Mechanisms and Applications.

    PubMed

    Ostroverkhova, Oksana

    2016-11-23

    Organic (opto)electronic materials have received considerable attention due to their applications in thin-film-transistors, light-emitting diodes, solar cells, sensors, photorefractive devices, and many others. The technological promises include low cost of these materials and the possibility of their room-temperature deposition from solution on large-area and/or flexible substrates. The article reviews the current understanding of the physical mechanisms that determine the (opto)electronic properties of high-performance organic materials. The focus of the review is on photoinduced processes and on electronic properties important for optoelectronic applications relying on charge carrier photogeneration. Additionally, it highlights the capabilities of various experimental techniques for characterization of these materials, summarizes top-of-the-line device performance, and outlines recent trends in the further development of the field. The properties of materials based both on small molecules and on conjugated polymers are considered, and their applications in organic solar cells, photodetectors, and photorefractive devices are discussed.

  10. Intriguing optoelectronic properties of metal halide perovskites

    DOE PAGES

    Manser, Joseph S.; Christians, Jeffrey A.; Kamat, Prashant V.

    2016-06-21

    Here, a new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX3 stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewed withmore » an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CH3NH3PbI3) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2- dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.« less

  11. Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

    NASA Astrophysics Data System (ADS)

    Huang, Bing; Deng, Hui-Xiong; Lee, Hoonkyung; Yoon, Mina; Sumpter, Bobby G.; Liu, Feng; Smith, Sean C.; Wei, Su-Huai

    2014-04-01

    Silicon is arguably the best electronic material, but it is not a good optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS) shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single- and double-sided hydrogenated BS are characterized by dipole-allowed direct (or quasidirect) band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-sided hydrogenated BS structures exhibit direct (or quasidirect) band gaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high-efficiency, optoelectronic applications.

  12. Analog/Digital System for Germanium Thermometer

    NASA Technical Reports Server (NTRS)

    Woodhouse, Christopher

    1988-01-01

    Electronic system containing analog and digital circuits makes high-precision, four-wire measurements of resistance of each germanium resistance thermometer (GRT) in array of devices, using alternating current (ac) of 1 micro-A. At end measurement interval, contents of negative register subtracted from positive one, resulting in very-narrow-band synchronous demodulation of carrier wave and suppression of out-of-band noise. Microprocessor free to perform other duties after measurement complete. Useful in noisy terrestrial environments encountered in factories.

  13. Program Documentation for the Analog Digitization Program,

    DTIC Science & Technology

    COMPUTER PROGRAM DOCUMENTATION, *ANALOG TO DIGITAL CONVERTERS, REAL TIME, COMPUTER LOGIC, INPUT OUTPUT PROCESSING, SAMPLING, INPUT OUTPUT DEVICES...FLOW CHARTING, ANALOG SIGNALS, DISK RECORDING SYSTEMS, DIGITAL RECORDING SYSTEMS, ASSEMBLY LANGUAGES.

  14. Electro-Optic Analog/Digital Converter.

    DTIC Science & Technology

    electro - optic material and a source of linearly polarized light is arranged to transmit its light energy along each of the optical waveguides. Electrodes are disposed contiguous to the optical waveguides for impressing electric fields thereacross. An input signal potential is applied to the electrodes to produce electric fields of intensity relative to each of the waveguides such that causes phase shift and resultant change of polarization which can be detected as representative of a binary ’one’ or binary ’zero’ for each of the channel optical

  15. Analog current mode analog/digital converter

    NASA Technical Reports Server (NTRS)

    Hadidi, Khayrollah (Inventor)

    1996-01-01

    An improved subranging or comparator circuit is provided for an analog-to-digital converter. As a subranging circuit, the circuit produces a residual signal representing the difference between an analog input signal and an analog of a digital representation. This is achieved by subdividing the digital representation into two or more parts and subtracting from the analog input signal analogs of each of the individual digital portions. In another aspect of the present invention, the subranging circuit comprises two sets of differential input pairs in which the transconductance of one differential input pair is scaled relative to the transconductance of the other differential input pair. As a consequence, the same resistor string may be used for two different digital-to-analog converters of the subranging circuit.

  16. Intelligent computational model for classification of sub-Golgi protein using oversampling and fisher feature selection methods.

    PubMed

    Ahmad, Jamal; Javed, Faisal; Hayat, Maqsood

    2017-05-01

    Golgi is one of the core proteins of a cell, constitutes in both plants and animals, which is involved in protein synthesis. Golgi is responsible for receiving and processing the macromolecules and trafficking of newly processed protein to its intended destination. Dysfunction in Golgi protein is expected to cause many neurodegenerative and inherited diseases that may be cured well if they are detected effectively and timely. Golgi protein is categorized into two parts cis-Golgi and trans-Golgi. The identification of Golgi protein via direct method is very hard due to limited available recognized structures. Therefore, the researchers divert their attention toward the sequences from structures. However, owing to technological advancement, exploration of huge amount of sequences was reported in the databases. So recognition of large amount of unprocessed data using conventional methods is very difficult. Therefore, the concept of intelligence was incorporated with computational model. Intelligence based computational model obtained reasonable results, but the gap of improvement is still under consideration. In this regard, an intelligent automatic recognition model is developed in order to enhance the true classification rate of sub-Golgi proteins. In this approach, discrete and evolutionary feature extraction methods are applied on the benchmark Golgi protein datasets to excerpt salient, propound and variant numerical descriptors. After that, an oversampling technique Syntactic Minority over Sampling Technique is employed to balance the data. Hybrid spaces are also generated with combination of these feature spaces. Further, Fisher feature selection method is utilized to reduce the extra noisy and redundant features from feature vector. Finally, k-nearest neighbor algorithm is used as learning hypothesis. Three distinct cross validation tests are used to examine the stability and efficiency of the proposed model. The predicted outcomes of proposed model are better

  17. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  18. Assembly of opto-electronic module with improved heat sink

    DOEpatents

    Chan, Benson; Fortier, Paul Francis; Freitag, Ladd William; Galli, Gary T.; Guindon, Francois; Johnson, Glen Walden; Letourneau, Martial; Sherman, John H.; Tetreault, Real

    2004-11-23

    A heat sink for a transceiver optoelectronic module including dual direct heat paths and a structure which encloses a number of chips having a central web which electrically isolates transmitter and receiver chips from each other. A retainer for an optical coupler having a port into which epoxy is poured. An overmolded base for an optoelectronic module having epoxy flow controller members built thereon. Assembly methods for an optoelectronic module including gap setting and variation of a TAB bonding process.

  19. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  20. A Class of Near Shift-Invariant and Orientation-Selective Transform Based on Delay-Less Oversampled Even-Stacked Cosine-Modulated Filter Banks

    NASA Astrophysics Data System (ADS)

    Kyochi, Seisuke; Ikehara, Masaaki

    The purpose of this study is to show a class of near shift-invariant and orientation-selective transform based on even-stacked cosine-modulated filter banks (ECFBs) which originally have been proposed by Lin and Vaidyanathan. It is well-known that ECFBs can be designed by the modulation of just one prototype filter and guarantee the linear phase property. We extend this class to delay-less oversampled ECFB and show two additional attractive features; high directional selectivity and near shift-invariant property. In this paper, these properties are verified by theoretical analysis and demonstrations.

  1. Shallow halogen vacancies in halide optoelectronic materials

    DOE PAGES

    Shi, Hongliang; Du, Mao -Hua

    2014-11-05

    Halogen vacancies (VH) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., CH3NH3PbI3 and TlBr. Both CH3NH3PbI3 and TlBr have been found to have shallow VH, in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., CH3NH3PbI3, CH3NH3SnI3 (photovoltaic materials), TlBr, and CsPbBr3, (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VHmore » is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of ns2 ions both play important roles in creating shallow VH in halides such as CH3NH3PbI3, CH3NH3SnI3, and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH, such as those with long cation-cation distances and low anion coordination numbers, and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH. Furthermore, the results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.« less

  2. Shallow halogen vacancies in halide optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Du, Mao-Hua

    2014-11-01

    Halogen vacancies (VH ) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., C H3N H3Pb I3 and TlBr. Both C H3N H3Pb I3 and TlBr have been found to have shallow VH , in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., C H3N H3Pb I3 , C H3N H3Sn I3 (photovoltaic materials), TlBr, and CsPbB r3 (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VH is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of n s2 ions both play important roles in creating shallow VH in halides such as C H3N H3Pb I3 , C H3N H3Sn I3 , and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH , such as those with large cation-cation distances and low anion coordination numbers and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH . The results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.

  3. Optoelectronic Workshops. 5. Modern Coherence Theory

    DTIC Science & Technology

    1988-05-19

    ARO -URI Center for Opto-Electronic Systems Research The Institute of Optics, University of Rochester srr*iri 7CLA$5F(1ATI0N OF Tl"’PG im, WWIOfI...providing a solution to h~gh priority Army requirements. Responsible for program and program execuition are Dr. Nicholas George, University of Rochester ( ARO ...ON MODERN COHERENCE THEORY Organizer: ARO -URI-University of Rochester and CECOM Center for Night Vision and Electro-Optics 1. INTRODUCTION 2. SUMMARY

  4. Statistical conjugated polymers comprising optoelectronically distinct units.

    PubMed

    Hollinger, Jon; Sun, Jing; Gao, Dong; Karl, Dominik; Seferos, Dwight S

    2013-03-12

    Poly(3-heptylselenophene)-stat-poly(3-hexylthiophene) is synthesized and characterized in terms of its crystallinity and performance in an organic photovoltaic (OPV) cell. Despite the random distribution of units along the polymer main chain, the material is semi-crystalline, as demonstrated by differential scanning calorimetry and wide-angle X-ray diffraction. Thin-film absorption suggests an increased compatibility than seen with 3-hexylselenophene monomer. Optoelectronic properties are an average of the two homopolymers, and OPV performance is enhanced by a broadened absorption profile and a favorable morphology.

  5. ARTICLES: Optoelectronic readout with an injection laser

    NASA Astrophysics Data System (ADS)

    Luc, Vu V.; Eliseev, P. G.; Man'ko, Margarita A.; Mikaelyan, T. T.; Okhotnikov, O. G.; Sokolov, S. N.

    1982-09-01

    An investigation was made of the possibility of utilizing an injection heterolaser in optical devices for data retrieval. An injection laser was used both as a source and detector of its own radiation reflected from a data carrier (optoelectronic readout). The influence of the reflected radiation was due to quasisteady modulation of the Q factor of the resonator, which was accompanied by modulation of the voltage across the laser diode. A study was made of the influence of the pump current on the useful signal and it was found that this current was related to the differential resistance of the laser diode.

  6. Focused Ion Beam Technology for Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Reithmaier, J. P.; Bach, L.; Forchel, A.

    2003-08-01

    High-resolution proximity free lithography was developed using InP as anorganic resist for ion beam exposure. InP is very sensitive on ion beam irradiation and show a highly nonlinear dose dependence with a contrast function comparable to organic electron beam resists. In combination with implantation induced quantum well intermixing this new lithographic technique based on focused ion beams is used to realize high performance nano patterned optoelectronic devices like complex coupled distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers.

  7. Monolithically integrated optoelectronic down-converter (MIOD)

    NASA Astrophysics Data System (ADS)

    Portnoi, Efrim L.; Venus, G. B.; Khazan, A. A.; Gorfinkel, Vera B.; Kompa, Guenter; Avrutin, Evgenii A.; Thayne, Iain G.; Barrow, David A.; Marsh, John H.

    1995-06-01

    Optoelectronic down-conversion of very high-frequency amplitude-modulated signals using a semiconductor laser simultaneously as a local oscillator and a mixer is proposed. Three possible constructions of a monolithically integrated down-converter are considered theoretically: a four-terminal semiconductor laser with dual pumping current/modal gain control, and both a passively mode-locked and a passively Q-switched semiconductor laser monolithically integrated with an electroabsorption or pumping current modulator. Experimental verification of the feasibility of the concept of down conversion in a laser diode is presented.

  8. Optoelectronics education training programs in Scotland

    NASA Astrophysics Data System (ADS)

    Marsh, John H.

    2002-05-01

    The optoelectronics industry is of increasing importance to the Scottish economy, with annual sales of 1 billion and it is planned to grow this to 8.8 billion by 2010. The industry already employs around 5,000 people and, in the last year, 800 new jobs were created, including a high percentage filled by graduates and PhDs. One of the major challenges is to provide staff training at all levels: technicians, graduates and postgraduates. A variety of organizations - industry, government, university and professional societies - are working together to meet this challenge.

  9. A Design Methodology for Optoelectronic VLSI

    DTIC Science & Technology

    2007-01-01

    soldered to a copper -clad printed circuit (PC) board, are no longer sufficient for today’s high-speed ICs. A processing chip that can compute data at a rate...design approach. A new design methodology has to be adopted to take advan- tage of the benefits that FSOI offers. Optoelectronic VLSI is the coupling of...and connections are made from chip to chip via traces of copper wire, as shown in Figure 2-2. The signal from a logic gate on one chip to a logic gate

  10. Coherent optoelectronics with single quantum dots

    NASA Astrophysics Data System (ADS)

    Zrenner, A.; Ester, P.; Michaelis de Vasconcellos, S.; Hübner, M. C.; Lackmann, L.; Stufler, S.; Bichler, M.

    2008-11-01

    The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.

  11. In-situ nanochemistry for optoelectronics

    NASA Astrophysics Data System (ADS)

    Kim, Won Jin

    This thesis describes recent results on simple methods to arrange nanosize objects such as semiconductor nanocrystals, noble metal nanoparticles, and upconversion nanophosphors by means of top-down processes. Specific focus is directed towards approaches to produce predefined patterns of various nanostructure materials using optical lithography for direct writing of films for optoelectronic and electronic devices. To obtain photo-patternability, the nanostructure materials [for example semiconductor nanocrystals (CdSe, CdTe, PbSe), metallic nanoparticles (Ag), upconversion nanophosphors (Er3+/Yb 3+ or Tm3+/Yb3+ co-doped NaYF4 ), and transparent conducting oxide nanoparticles (ITO, ZnO)] were functionalized by incorporation of the functional ligand t-butoxycarbonyl (t-BOC) which has an acid-labile moiety. The t-BOC group undergoes a cleavage, when subjected to UV irradiation in the presence of a photo acid generator (PAG) to releases isobutene and carbon dioxide. Depending on the need of the application, either the exposed regions (negative pattern) or the non-exposed regions (positive pattern) could be developed from the exposed films by appropriate solvent selection. The photo exposed regions of the film are rendered hydrophilic due to the degradation of the t-BOC, the un-exposed regions remain hydrophobic. This solubility change in the QDs is the basis of their patternablity. The un-exposed regions can be removed to obtain the negative pattern by washing with hydrophobic solvents, whereas the exposed regions can be selectively removed to obtain positive pattern by washing with hydrophilic solvents. This change in the surface chemistry results in the ability to photo-pattern the various nanostructure materials where desired for a number of optoelectronic device geometries. We demonstrate that the ultimate resolution (linewidth and spacing) of this technique is below submicron. Details on technological aspects concerning nanoparticle patterning as well as practical

  12. Optoelectronic pH Meter: Further Details

    NASA Technical Reports Server (NTRS)

    Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.

    2009-01-01

    A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

  13. Colloidal quantum dots as optoelectronic elements

    NASA Astrophysics Data System (ADS)

    Vasudev, Milana; Yamanaka, Takayuki; Sun, Ke; Li, Yang; Yang, Jianyong; Ramadurai, Dinakar; Stroscio, Michael A.; Dutta, Mitra

    2007-02-01

    Novel optoelectronic systems based on ensembles of semiconductor nanocrystals are addressed in this paper. Colloidal semiconductor quantum dots and related quantum-wire structures have been characterized optically; these optical measurements include those made on self-assembled monolayers of DNA molecules terminated on one end with a common substrate and on the other end with TiO II quantum dots. The electronic properties of these structures are modeled and compared with experiment. The characterization and application of ensembles of colloidal quantum dots with molecular interconnects are considered. The chemically-directed assembly of ensembles of colloidal quantum dots with biomolecular interconnects is demonstrated with quantum dot densities in excess of 10 +17 cm -3. A number of novel photodetectors have been designed based on the combined use of double-barrier quantum-well injectors, colloidal quantum dots, and conductive polymers. Optoelectronic devices including photodetectors and solar cells based on threedimensional ensembles of quantum dots are considered along with underlying phenomena such as miniband formation and the robustness of minibands to displacements of quantum dots in the ensemble.

  14. Optoelectronic inventory system for special nuclear material

    SciTech Connect

    Sieradzki, F.H.

    1994-01-01

    In support of the Department of Energy`s Dismantlement Program, the Optoelectronics Characterization and Sensor Development Department 2231 at Sandia National Laboratories/New Mexico has developed an in situ nonintrusive Optoelectronic Inventory System (OIS) that has the potential for application wherever periodic inventory of selected material is desired. Using a network of fiber-optic links, the OIS retrieves and stores inventory signatures from data storage devices (which are permanently attached to material storage containers) while inherently providing electromagnetic pulse immunity and electrical noise isolation. Photovoltaic cells (located within the storage facility) convert laser diode optic power from a laser driver to electrical energy. When powered and triggered, the data storage devices sequentially output their digital inventory signatures through light-emitting diode/photo diode data links for retrieval and storage in a mobile data acquisition system. An item`s exact location is determined through fiber-optic network and software design. The OIS provides an on-demand method for obtaining acceptable inventory reports while eliminating the need for human presence inside the material storage facility. By using modularization and prefabricated construction with mature technologies and components, an OIS installation with virtually unlimited capacity can be tailored to the customer`s requirements.

  15. VCSEL operational requirements for optoelectronic neural networks

    NASA Astrophysics Data System (ADS)

    Waddie, Andrew J.; Taghizadeh, Mohammad R.

    2003-04-01

    In this paper we shall describe the design and successful operation of an optoelectronic Hopfield network demonstrator system. This demonstrator system, based around a free-space diffractive optical interconnect, was designed to perform a range of optimisation tasks, in particular those associated with the scheduling of packets through different switching topologies. Experimental optimisation of the neural network throughput, for both a crossbar and Banyan switch topology, allows the neural network parameters (e.g. neuron bias, neuron weighting) to be tuned to ensure optimal operation of the network for a particular switch topology. The weighted interconnections in this optoelectronic system are provided by a diffractive optical element/lens combination whilst the neurons are implemented electronically. The transition between the electronic and optical domains is handled by an 8×8 VCSEL array for the electronic-optic interface, and an 8×8 Si photodetector array for the optic-electronic interface. The VCSEL array, supplied by Avalon Photonics, is an oxide-confined near-infrared GaAs device capable of 250MHz modulation at a wavelength of 960nm. The diffractive optical interconnect is designed using simulated annealing optimization and fabricated using VLSI photolithography. Using these techniques it is possible to create interconnects with a total efficiency of ~70% and a uniformity of < 1%.

  16. Time-Resolved Measurements in Optoelectronic Microbioanalysis

    NASA Technical Reports Server (NTRS)

    Bearman, Gregory; Kossakovski, Dmitri

    2003-01-01

    A report presents discussion of time-resolved measurements in optoelectronic microbioanalysis. Proposed microbioanalytical laboratory-on-a-chip devices for detection of microbes and toxic chemicals would include optoelectronic sensors and associated electronic circuits that would look for fluorescence or phosphorescence signatures of multiple hazardous biomolecules in order to detect which ones were present in a given situation. The emphasis in the instant report is on gating an active-pixel sensor in the time domain, instead of filtering light in the wavelength domain, to prevent the sensor from responding to a laser pulse used to excite fluorescence or phosphorescence while enabling the sensor to respond to the decaying fluorescence or phosphorescence signal that follows the laser pulse. The active-pixel sensor would be turned on after the laser pulse and would be used to either integrate the fluorescence or phosphorescence signal over several lifetimes and many excitation pulses or else take time-resolved measurements of the fluorescence or phosphorescence. The report also discusses issues of multiplexing and of using time-resolved measurements of fluorophores with known different fluorescence lifetimes to distinguish among them.

  17. Pole movement in electronic and optoelectronic oscillators

    NASA Astrophysics Data System (ADS)

    Chatterjee, S.; Pal, S.; Biswas, B. N.

    2013-12-01

    An RLC circuit with poles on the left half of the complex frequency plane is capable of executing transient oscillations. During this period, energy conversion from potential to kinetic and from kinetic to potential continuously goes on, until the stored energy is lost in dissipation through the resistance. On the other hand, in an electronic or opto-electronic oscillator with an embedded RLC circuit, the poles are forcibly placed on the right-half plane (RHP) and as far as practicable away from the imaginary axis in order to help the growth of oscillation as quickly as possible. And ultimately, it is imagined that, like the case of an ideal linear harmonic oscillator, the poles are frozen on the imaginary axis so that the oscillation neither grows nor decays. The authors feel that this act of holding the poles right on the imaginary axis is a theoretical conjecture in a soft or hard self-excited oscillator. In this article, a detailed discussion on pole movement in an electronic and opto-electronic oscillator is carried out from the basic concept. A new analytical method for estimating the time-dependent part of the pole is introduced here.

  18. 77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-30

    ... COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... the United States after importation of certain optoelectronic devices for fiber optic communications... importation of certain optoelectronic devices for fiber optic communications, components thereof, and products...

  19. A current-excited triple-time-voltage oversampling method for bio-impedance model for cost-efficient circuit system.

    PubMed

    Yan Hong; Yong Wang; Wang Ling Goh; Yuan Gao; Lei Yao

    2015-08-01

    This paper presents a mathematic method and a cost-efficient circuit to measure the value of each component of the bio-impedance model at electrode-electrolyte interface. The proposed current excited triple-time-voltage oversampling (TTVO) method deduces the component values by solving triple simultaneous electric equation (TSEE) at different time nodes during a current excitation, which are the voltage functions of time. The proposed triple simultaneous electric equations (TSEEs) allows random selections of the time nodes, hence numerous solutions can be obtained during a single current excitation. Following that, the oversampling approach is engaged by averaging all solutions of multiple TSEEs acquired after a single current excitation, which increases the practical measurement accuracy through the improvement of the signal-to-noise ratio (SNR). In addition, a print circuit board (PCB) that consists a switched current exciter and an analog-to-digital converter (ADC) is designed for signal acquisition. This presents a great cost reduction when compared against other instrument-based measurement data reported [1]. Through testing, the measured values of this work is proven to be in superb agreements on the true component values of the electrode-electrolyte interface model. This work is most suited and also useful for biological and biomedical applications, to perform tasks such as stimulations, recordings, impedance characterizations, etc.

  20. S-SulfPred: A sensitive predictor to capture S-sulfenylation sites based on a resampling one-sided selection undersampling-synthetic minority oversampling technique.

    PubMed

    Jia, Cangzhi; Zuo, Yun

    2017-06-07

    Protein S-sulfenylation is a reversible post-translational modification involving covalent attachment of hydroxide to the thiol group of cysteine residues, which is involved in various biological processes including cell signaling, response to stress and protein functions. Herein we present S-SulfPred, a support vector machine based model to capture potential S-sulfenylation sites and improve the efficiency and relevance of experimental identification of protein S-sulfenylation sites. One-sided selection (OSS) undersampling and synthetic minority oversampling technique (SMOTE) oversampling were combined to establish balanced training datasets. This approach is shown to perform better than using only OSS or SMOTE in an independent test. The best combination of position-specific amino acid propensity and five physicochemical properties of amino acids were selected to optimize the predictor performance. Using S-SulfPred, we achieve an average sensitivity of 74.62%, and an average specificity of 71.62% on independent datasets. Compared with other published tools, S-SulfPred attains both higher sensitivity and specificity. We not only propose a highly accurate method to predict protein S-sulfenylation sites, but also provide insights that could improve the efficiency of other bioinformatics tools. Copyright © 2017 Elsevier Ltd. All rights reserved.

  1. Optoelectronic hit/miss transform for screening cervical smear slides

    NASA Astrophysics Data System (ADS)

    Narayanswamy, R.; Turner, R. M.; McKnight, D. J.; Johnson, K. M.; Sharpe, J. P.

    1995-06-01

    An optoelectronic morphological processor for detecting regions of interest (abnormal cells) on a cervical smear slide using the hit/miss transform is presented. Computer simulation of the algorithm tested on 184 Pap-smear images provided 95% detection and 5% false alarm. An optoelectronic implementation of the hit/miss transform is presented, along with preliminary experimental results.

  2. Optoelectronic sensors for subsea oil and gas production

    NASA Astrophysics Data System (ADS)

    McStay, D.; Shiach, G.; Nolan, A.; McAvoy, S.

    2007-07-01

    The potential for optoelectronic sensor technology to provide the monitoring and control systems required for advanced subsea hydrocarbon production management is described. The utilisation of optoelectronic sensor technology to produce a new class of subsea Christmas Tree with in-built enhanced production monitoring and control systems as well as effective environmental monitoring systems is reported.

  3. Multiple Quantum Well (MQW) Devices For Monolithic Integrated Optoelectronics

    NASA Astrophysics Data System (ADS)

    Wood, Thomas H.

    1988-05-01

    Semiconductor MQWs represent a new technology for opto-electronics. These MQWs have an electroabsorption effect approximately 50 times larger than conventional semiconductors. They are compatible with existing source and detector material systems and produce devices that are compact and high speed, which makes them useful for monolithic integrated optoelectronic devices.

  4. Multiple Quantum Well(MQW) Devices For Monolithic Integrated Optoelectronics

    NASA Astrophysics Data System (ADS)

    Wood, Thomas H.

    1987-02-01

    A new technology for opto-electronics has been developed, semiconductor MQWs. These MQWs have an electroabsorption effect 30-60 times larger than conventional semiconductors. They are compatible with existing source and detector material systems and produce devices that are compact and high speed, which makes them useful for monolithic integrated optoelectronic devices.

  5. Six Classes of Diffraction-Based Optoelectronic Instruments

    NASA Technical Reports Server (NTRS)

    Spremo, Stevan; Fuhr, Peter; Schipper, John

    2003-01-01

    Six classes of diffraction-based optoelectronic instruments have been invented as means for wavelength-based processing of light. One family of anticipated applications lies in scientific instrumentation for studying chemical and physical reactions that affect and/or are affected differently by light of different wavelengths or different combinations of wavelengths. Another family of anticipated applications lies in optoelectronic communication systems.

  6. Optoelectronic determination of insect presence in fruit

    NASA Astrophysics Data System (ADS)

    Shrestha, Bim P.; Guyer, Daniel E.; Ariana, Diwan P.

    2004-03-01

    Opto-electronic methods represent a potential to identify the presence of insect activities on or within agricultural commodities. Such measurements may detect actual insect presence or indirect secondary changes in the product resulting from past or present insect activities. Preliminary imaging studies have demonstrated some unique spectral characteristics of insect larvae on cherries. A detailed study on spectral characteristics of healthy and infested tart cherry tissue with and without larvae (Plum Curculio) was conducted for reflectance, transmittance and interactance modes for each of UV and visible/NIR light sources. The intensity of transmitted UV signals through the tart cherry was found to be weak; however, the spectral properties of UV light in reflectance mode has revealed some typical characteristics of larvae on healthy and infested tissue. The larvae on tissue were found to exhibit UV induced fluorescence signals in the range of 400-700 nm. Multi spectral imaging of the halved tart cherry has also corroborated this particular behavior of plum curculio larvae. The gray scale subtraction between corresponding pixels in these multi-spectral images has helped to locate the larvae precisely on the tart cherry tissue background, which otherwise was inseparable. The spectral characteristics of visible/NIR energy in transmittance and reflectance mode are capable of estimating the secondary effect of infestation in tart cherry tissue. The study has shown the shifting in peaks of reflected and transmitted signals from healthy and infested tissues and coincides with the concept of browning of tissue at cell level as a process of infestation. Interactance study has been carried out to study the possibility of coupling opto-electronic devices with the existing pitting process. The shifting of peaks has been observed for the normalized intensity of healthy and infested tissues. The study has been able to establish the inherent spectral characteristic of these

  7. Shallow halogen vacancies in halide optoelectronic materials

    SciTech Connect

    Shi, Hongliang; Du, Mao -Hua

    2014-11-05

    Halogen vacancies (VH) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., CH3NH3PbI3 and TlBr. Both CH3NH3PbI3 and TlBr have been found to have shallow VH, in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., CH3NH3PbI3, CH3NH3SnI3 (photovoltaic materials), TlBr, and CsPbBr3, (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VH is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of ns2 ions both play important roles in creating shallow VH in halides such as CH3NH3PbI3, CH3NH3SnI3, and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH, such as those with long cation-cation distances and low anion coordination numbers, and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH. Furthermore, the results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.

  8. Prospects for high-Tc superconducting optoelectronics

    NASA Astrophysics Data System (ADS)

    Sobolewski, Roman

    1992-04-01

    Two possible approaches for the development of a complete optoelectronic system with the elements based on high-temperature superconducting (HTS) films are discussed. The first approach consists of manufacturing the devices made of conventional electro-optic materials and containing HTS transmission lines and electrodes. The second, more futuristic approach, is to exploit contrasting properties of the oxygen-poor and oxygen-rich HTS phases to fabricate novel, monolithic devices. In this latter case, a laser writing process is implemented to define superconducting and nonsuperconducting regions in the same, epitaxial HTS film Several practical devices, such as high-speed interconnects, high-frequency traveling-wave optical modulators, picosecond electrical pulse generators, sensitive photodetectors, and a novel HTS charging-effect transistor are proposed. All the devices can operate in the 30-80 K temperature range, where refrigeration is cheap and the parameters of semiconducting (e.g., GaAs) devices are optimal.

  9. Implantable optoelectronic probes for in vivo optogenetics

    NASA Astrophysics Data System (ADS)

    Iseri, Ege; Kuzum, Duygu

    2017-06-01

    More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

  10. Towards an optoelectronic luminescent sensing device

    NASA Astrophysics Data System (ADS)

    Papkovsky, Dmitry B.; Ponomarev, Gely V.; Ogurtsov, Vladimir I.; Dvornikov, Alexey A.

    1994-02-01

    The new dye which has improved spectral characteristics synthesized on the basis of platinum complex of the porphyrin-like compound was studied with the view of its application to oxygen sensing. It resulted in a new solid-state oxygen-sensitive material with advanced working characteristics which is highly compatible with excitation with yellow LEDs. This new sensing material makes it possible to develop simple fiber-optoelectronic devices -- prototype oxygen sensors. One of the embodiments was constructed which utilizes powerful yellow LED as a light source, silicone photodiode as a photodetector, and has a fiber-optic output terminated with an active element (oxygen membrane). The electronic scheme of the device provides modulation of LED at a kilohertz range frequency and is capable of measuring specific luminescent signal. The system is now under improvement and optimization with emphasis to lifetime measurements performed by phase method.

  11. Implantable optoelectronic probes for in vivo optogenetics.

    PubMed

    Iseri, Ege; Kuzum, Duygu

    2017-02-15

    More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

  12. Optoelectronic date acquisition system based on FPGA

    NASA Astrophysics Data System (ADS)

    Li, Xin; Liu, Chunyang; Song, De; Tong, Zhiguo; Liu, Xiangqing

    2015-11-01

    An optoelectronic date acquisition system is designed based on FPGA. FPGA chip that is EP1C3T144C8 of Cyclone devices from Altera corporation is used as the centre of logic control, XTP2046 chip is used as A/D converter, host computer that communicates with the date acquisition system through RS-232 serial communication interface are used as display device and photo resistance is used as photo sensor. We use Verilog HDL to write logic control code about FPGA. It is proved that timing sequence is correct through the simulation of ModelSim. Test results indicate that this system meets the design requirement, has fast response and stable operation by actual hardware circuit test.

  13. Nanoscale selective area epitaxy for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Elarde, V. C.; Coleman, J. J.

    Self-assembled quantum dots have been heavily researched in recent years because of the potential applications to quantum electronic and optoelectronic devices they present. The non-uniformity and random ordering resulting from the self-assembly processes, however, are detrimental to potential applications, prohibiting the type of engineering control necessary for complex systems. The work presented in this document has sought to overcome the limitations of self-assembly by combining selective area epitaxy via MOCVD with high-resolution electron beam lithography to achieve lateral control over semiconductor structures at the nanometer scale. Two different structures are presented. The first is patterned quantum dots which improve on the uniformity and order of similar self-assembled quantum dots. The second is an entirely novel structure, the nanopore active layer, which demonstrates the potential for this process to extend beyond the constraints of self-assembly. Experimental and theoretical results for both structures are presented.

  14. Integrated NEMS and optoelectronics for sensor applications.

    SciTech Connect

    Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R.; Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade; Okandan, Murat; Peterson, Kenneth Allen

    2008-01-01

    This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

  15. Assembling silver nanowires using optoelectronic tweezers

    NASA Astrophysics Data System (ADS)

    Zhang, Shuailong; Cooper, Jonathan M.; Neale, Steve L.

    2016-03-01

    Light patterned dielectrophoresis or optoelectronic tweezers (OET) has been proved to be an effective micromanipulation technology for cell separation, cell sorting and control of cell interactions. Apart from being useful for cell biology experiments, the capability of moving small objects accurately also makes OET an attractive technology for other micromanipulation applications. In particular, OET has the potential to be used for efficiently and accurately assembling small optoelectronic/electronic components into circuits. This approach could produce a step change in the size of the smallest components that are routinely assembled; down from the current smallest standard component size of 400×200 μm (0402 metric) to components a few microns across and even nanostructured components. In this work, we have demonstrated the use of OET to manipulate conductive silver nanowires into different patterns. The silver nanowires (typical diameter: 60 nm; typical length: 10 μm) were suspended in a 15 mS/m solution of KCL in water and manipulated by positive dielectrophoresis force generated by OET. A proof-of-concept demonstration was also made to prove the feasibility of using OET to manipulate silver nanowires to form a 150-μm-long conductive path between two isolated electrodes. It can be seen that the resistance between two electrodes was effectively brought down to around 700 Ω after the silver nanowires were assembled and the solution evaporated. Future work in this area will focus on increasing the conductivity of these tracks, encapsulating the assembled silver nanowires to prevent silver oxidation and provide mechanical protection, which can be achieved via 3D printing and inkjet printing technology.

  16. Novel Oversampling Technique for Improving Signal-to-Quantization Noise Ratio on Accelerometer-Based Smart Jerk Sensors in CNC Applications

    PubMed Central

    Rangel-Magdaleno, Jose J.; Romero-Troncoso, Rene J.; Osornio-Rios, Roque A.; Cabal-Yepez, Eduardo

    2009-01-01

    Jerk monitoring, defined as the first derivative of acceleration, has become a major issue in computerized numeric controlled (CNC) machines. Several works highlight the necessity of measuring jerk in a reliable way for improving production processes. Nowadays, the computation of jerk is done by finite differences of the acceleration signal, computed at the Nyquist rate, which leads to low signal-to-quantization noise ratio (SQNR) during the estimation. The novelty of this work is the development of a smart sensor for jerk monitoring from a standard accelerometer, which has improved SQNR. The proposal is based on oversampling techniques that give a better estimation of jerk than that produced by a Nyquist-rate differentiator. Simulations and experimental results are presented to show the overall methodology performance. PMID:22412337

  17. An automated system using spatial oversampling for optical mapping in murine atria. Development and validation with monophasic and transmembrane action potentials

    PubMed Central

    Yu, Ting Yue; Syeda, Fahima; Holmes, Andrew P.; Osborne, Benjamin; Dehghani, Hamid; Brain, Keith L.; Kirchhof, Paulus; Fabritz, Larissa

    2014-01-01

    We developed and validated a new optical mapping system for quantification of electrical activation and repolarisation in murine atria. The system makes use of a novel 2nd generation complementary metal-oxide-semiconductor (CMOS) camera with deliberate oversampling to allow both assessment of electrical activation with high spatial and temporal resolution (128 × 2048 pixels) and reliable assessment of atrial murine repolarisation using post-processing of signals. Optical recordings were taken from isolated, superfused and electrically stimulated murine left atria. The system reliably describes activation sequences, identifies areas of functional block, and allows quantification of conduction velocities and vectors. Furthermore, the system records murine atrial action potentials with comparable duration to both monophasic and transmembrane action potentials in murine atria. PMID:25130572

  18. Novel Oversampling Technique for Improving Signal-to-Quantization Noise Ratio on Accelerometer-Based Smart Jerk Sensors in CNC Applications.

    PubMed

    Rangel-Magdaleno, Jose J; Romero-Troncoso, Rene J; Osornio-Rios, Roque A; Cabal-Yepez, Eduardo

    2009-01-01

    Jerk monitoring, defined as the first derivative of acceleration, has become a major issue in computerized numeric controlled (CNC) machines. Several works highlight the necessity of measuring jerk in a reliable way for improving production processes. Nowadays, the computation of jerk is done by finite differences of the acceleration signal, computed at the Nyquist rate, which leads to low signal-to-quantization noise ratio (SQNR) during the estimation. The novelty of this work is the development of a smart sensor for jerk monitoring from a standard accelerometer, which has improved SQNR. The proposal is based on oversampling techniques that give a better estimation of jerk than that produced by a Nyquist-rate differentiator. Simulations and experimental results are presented to show the overall methodology performance.

  19. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Ming, Wenmei; Du, Mao-Hua

    2016-03-01

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of n s2 ions (e.g., T l+ , P b2 + , and B i3 + ). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain B i3 + , which is also an n s2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of band gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected B i3 + based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n -BiSeBr, p -BiSI, and p -BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p -type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. Defect calculations indeed show that the

  20. Magnetometer Based on Optoelectronic Microwave Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Strekalov, Dmitry; Matsko, Andrey

    2005-01-01

    proposed instrument, intended mainly for use as a magnetometer, would include an optoelectronic oscillator (OEO) stabilized by an atomic cell that could play the role of a magnetically tunable microwave filter. The microwave frequency would vary with the magnetic field in the cell, thereby providing an indication of the magnetic field. The proposed magnetometer would offer a combination of high accuracy and high sensitivity, characterized by flux densities of less than a picotesla. In comparison with prior magnetometers, the proposed magnetometer could, in principle, be constructed as a compact, lightweight instrument: It could fit into a package of about 10 by 10 by 10 cm and would have a mass <0.5 kg. As described in several prior NASA Tech Briefs articles, an OEO is a hybrid of photonic and electronic components that generates highly spectrally pure microwave radiation, and optical radiation modulated by the microwave radiation, through direct conversion between laser light and microwave radiation in an optoelectronic feedback loop. As used here, "atomic cell" signifies a cell containing a vapor, the constituent atoms of which can be made to undergo transitions between quantum states, denoted hyperfine levels, when excited by light in a suitable wavelength range. The laser light must be in this range. The energy difference between the hyperfine levels defines the microwave frequency. In the proposed instrument (see figure), light from a laser would be introduced into an electro-optical modulator (EOM). Amplitude-modulated light from the exit port of the EOM would pass through a fiber-optic splitter having two output branches. The light in one branch would be sent through an atomic cell to a photodiode. The light in the other branch would constitute the microwave-modulated optical output. Part of the light leaving the atomic cell could also be used to stabilize the laser at a frequency in the vicinity of the desired hyperfine or other quantum transition. The

  1. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    DOE PAGES

    Du, Mao -Hua; Shi, Hongliang; Ming, Wenmei

    2016-03-29

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of ns2 ions (e.g., Tl+, Pb2+, and Bi3+). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain Bi3+, which is also an ns2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of bandmore » gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected Bi3+ based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n-BiSeBr, p-BiSI, and p-BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p-type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. As a result, defect calculations indeed show that

  2. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    SciTech Connect

    Du, Mao -Hua; Shi, Hongliang; Ming, Wenmei

    2016-03-29

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of ns2 ions (e.g., Tl+, Pb2+, and Bi3+). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain Bi3+, which is also an ns2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of band gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected Bi3+ based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n-BiSeBr, p-BiSI, and p-BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p-type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at

  3. Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

    NASA Astrophysics Data System (ADS)

    Liang, Yu Teng

    Over the past couple decades, fundamental research into carbon nanomaterials has produced a steady stream of groundbreaking physical science. Their record setting mechanical strength, chemical stability, and optoelectronic performance have fueled many optimistic claims regarding the breadth and pace of carbon nanotube and graphene integration. However, present synthetic, processing, and economic constraints have precluded these materials from many practical device applications. To overcome these limitations, novel synthetic techniques, processing methodologies, device geometries, and mechanistic insight were developed in this dissertation. The resulting advancements in material production and composite device performance have brought carbon nanomaterials ever closer to commercial implementation. For improved materials processing, vacuum co-deposition was first demonstrated as viable technique for forming carbon nanocomposite films without property distorting covalent modifications. Co-deposited nanoparticle, carbon nanotube, and graphene composite films enabled rapid device prototyping and compositional optimization. Cellulosic polymer stabilizers were then shown to be highly effective carbon nanomaterial dispersants, improving graphene production yields by two orders of magnitude in common organic solvents. By exploiting polarity interactions, iterative solvent exchange was used to further increase carbon nanomaterial dispersion concentrations by an additional order of magnitude, yielding concentrated inks. On top of their low causticity, these cellulosic nanomaterial inks have highly tunable viscosities, excellent film forming capacity, and outstanding thermal stability. These processing characteristics enable the efficient scaling of carbon nanomaterial coatings and device production using existing roll-to-roll fabrication techniques. Utilizing these process improvements, high-performance gas sensing, energy storage, transparent conductor, and photocatalytic

  4. A simple encapsulation method for organic optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Sun, Qian-Qian; An, Qiao-Shi; Zhang, Fu-Jun

    2014-08-01

    The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become a key problem for further development. In this paper, we report one simple encapsulation method for organic optoelectronic devices with a parafilm, based on ternary polymer solar cells (PSCs). The power conversion efficiencies (PCE) of PSCs with and without encapsulation decrease from 2.93% to 2.17% and from 2.87% to 1.16% after 168-hours of degradation under an ambient environment, respectively. The stability of PSCs could be enhanced by encapsulation with a parafilm. The encapsulation method is a competitive choice for organic optoelectronic devices, owing to its low cost and compatibility with flexible devices.

  5. Device-packaging method and apparatus for optoelectronic circuits

    DOEpatents

    Zortman, William A.; Henry, Michael David; Jarecki, Jr., Robert L.

    2017-04-25

    An optoelectronic device package and a method for its fabrication are provided. The device package includes a lid die and an active die that is sealed or sealable to the lid die and in which one or more optical waveguides are integrally defined. The active die includes one or more active device regions, i.e. integral optoelectronic devices or etched cavities for placement of discrete optoelectronic devices. Optical waveguides terminate at active device regions so that they can be coupled to them. Slots are defined in peripheral parts of the active dies. At least some of the slots are aligned with the ends of integral optical waveguides so that optical fibers or optoelectronic devices inserted in the slots can optically couple to the waveguides.

  6. Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

    NASA Astrophysics Data System (ADS)

    Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

    2017-07-01

    Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

  7. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    DOEpatents

    Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  8. Metal-dielectric hybrid surfaces as integrated optoelectronic interfaces

    DOEpatents

    Narasimhan, Vijay K.; Hymel, Thomas M.; Lai, Ruby A.; Cui, Yi

    2017-01-03

    An optoelectronic device has a hybrid metal-dielectric optoelectronic interface including an array of nanoscale dielectric resonant elements (e.g., nanopillars), and a metal film disposed between the dielectric resonant elements and below a top surface of the resonant elements such that the dielectric resonant elements protrude through the metal film. The device may also include an anti-reflection coating. The device may further include a metal film layer on each of the dielectric resonant elements.

  9. Metal-insulator-semiconductor optoelectronic fibres.

    PubMed

    Bayindir, Mehmet; Sorin, Fabien; Abouraddy, Ayman F; Viens, Jeff; Hart, Shandon D; Joannopoulos, John D; Fink, Yoel

    2004-10-14

    The combination of conductors, semiconductors and insulators with well-defined geometries and at prescribed length scales, while forming intimate interfaces, is essential in most functional electronic and optoelectronic devices. These are typically produced using a variety of elaborate wafer-based processes, which allow for small features, but are restricted to planar geometries and limited coverage area. In contrast, the technique of fibre drawing from a preformed reel or tube is simpler and yields extended lengths of highly uniform fibres with well-controlled geometries and good optical transport characteristics. So far, this technique has been restricted to particular materials and larger features. Here we report on the design, fabrication and characterization of fibres made of conducting, semiconducting and insulating materials in intimate contact and in a variety of geometries. We demonstrate that this approach can be used to construct a tunable fibre photodetector comprising an amorphous semiconductor core contacted by metallic microwires, and surrounded by a cylindrical-shell resonant optical cavity. Such a fibre is sensitive to illumination along its entire length (tens of meters), thus forming a photodetecting element of dimensionality one. We also construct a grid of such fibres that can identify the location of an illumination point. The advantage of this type of photodetector array is that it needs a number of elements of only order N, in contrast to the conventional order N2 for detector arrays made of photodetecting elements of dimensionality zero.

  10. Colloidal quantum dot materials for infrared optoelectronics

    NASA Astrophysics Data System (ADS)

    Arinze, Ebuka S.; Nyirjesy, Gabrielle; Cheng, Yan; Palmquist, Nathan; Thon, Susanna M.

    2015-09-01

    Colloidal quantum dots (CQDs) are an attractive material for optoelectronic applications because they combine flexible, low-cost solution-phase synthesis and processing with the potential for novel functionality arising from their nanostructure. Specifically, the bandgap of films composed of arrays of CQDs can be tuned via the quantum confinement effect for tailored spectral utilization. PbS-based CQDs can be tuned throughout the near and mid-infrared wavelengths and are a promising materials system for photovoltaic devices that harvest non-visible solar radiation. The performance of CQD solar cells is currently limited by an absorption-extraction compromise, whereby photon absorption lengths in the near infrared spectral regime exceed minority carrier diffusion lengths in the bulk films. Several light trapping strategies for overcoming this compromise and increasing the efficiency of infrared energy harvesting will be reviewed. A thin-film interference technique for creating multi-colored and transparent solar cells will be presented, and a discussion of designing plasmonic nanomaterials based on earth-abundant materials for integration into CQD solar cells is developed. The results indicate that it should be possible to achieve high absorption and color-tunability in a scalable nanomaterials system.

  11. Assessment of dental plaque by optoelectronic methods

    NASA Astrophysics Data System (ADS)

    Negrutiu, Meda-Lavinia; Sinescu, Cosmin; Bortun, Cristina Maria; Levai, Mihaela-Codrina; Topala, Florin Ionel; Crǎciunescu, Emanuela Lidia; Cojocariu, Andreea Codruta; Duma, Virgil Florin; Podoleanu, Adrian Gh.

    2016-03-01

    The formation of dental biofilm follows specific mechanisms of initial colonization on the surface, microcolony formation, development of organized three dimensional community structures, and detachment from the surface. The structure of the plaque biofilm might restrict the penetration of antimicrobial agents, while bacteria on a surface grow slowly and display a novel phenotype; the consequence of the latter is a reduced sensitivity to inhibitors. The aim of this study was to evaluate with different optoelectronic methods the morphological characteristics of the dental biofilm. The study was performed on samples from 25 patients aged between 18 and 35 years. The methods used in this study were Spectral Domain Optical Coherence Tomography (SD-OCT) working at 870 nm for in vivo evaluations and Scanning Electron Microscopy (SEM) for validations. For each patient a sample of dental biofilm was obtained directly from the vestibular surface of the teeth's. SD-OCT produced C- and B-scans that were used to generate three dimensional (3D) reconstructions of the sample. The results were compared with SEM evaluations. The biofilm network was dramatically destroyed after the professional dental cleaning. OCT noninvasive methods can act as a valuable tool for the 3D characterization of dental biofilms.

  12. Software for Use with Optoelectronic Measuring Tool

    NASA Technical Reports Server (NTRS)

    Ballard, Kim C.

    2004-01-01

    A computer program has been written to facilitate and accelerate the process of measurement by use of the apparatus described in "Optoelectronic Tool Adds Scale Marks to Photographic Images" (KSC-12201). The tool contains four laser diodes that generate parallel beams of light spaced apart at a known distance. The beams of light are used to project bright spots that serve as scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The computer program is applicable to a scene that contains the laser spots and that has been imaged in a square pixel format that can be imported into a graphical user interface (GUI) generated by the program. It is assumed that the laser spots and the distance(s) to be measured all lie in the same plane and that the plane is perpendicular to the line of sight of the camera used to record the image

  13. Terahertz biochip based on optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lu, Ja-Yu; Chen, Li-Jin; Kao, Tzeng-Fu; Chang, Hsu-Hao; Liu, An-Shyi; Yu, Yi-Chun; Wu, Ruey-Beei; Liu, Wei-Sheng; Chyi, Jen-Inn; Pan, Ci-Ling; Tsai, Ming-Cheng; Sun, Chi-Kuang

    2005-10-01

    The accurate detection of minute amounts of chemical and biological substances has been a major goal in bioanalytical technology throughout the twentieth century. Fluorescence dye labeling detection remains the effective analysis method, but it modifies the surroundings of molecules and lowering the precision of detection. An alternative label free detecting tool with little disturbance of target molecules is highly desired. Theoretical calculations and experiments have demonstrated that many biomolecules have intrinsic resonance due to vibration or rotation level transitions, allowing terahertz (THz)-probing technique as a potential tool for the label-free and noninvasive detection of biomolecules. In this paper, we first ever combined the THz optoelectronic technique with biochip technology to realize THz biosensing. By transferring the edge-coupled photonic transmitter into a thin glass substrate and by integrating with a polyethylene based biochip channel, near field THz detection of the biomolecules is demonstrated. By directly acquiring the absorption micro-spectrum in the THz range, different boiomecules can then be identified according to their THz fingerprints. For preliminary studies, the capability to identity different illicit drug powders is successfully demonstrated. This novel biochip sensing system has the advantages including label-free detection, high selectivity, high sensitivity, ease for sample preparation, and ease to parallel integrate with other biochip functionality modules. Our demonstrated detection capability allows specifying various illicit drug powders with weight of nano-gram, which also enables rapid identification with minute amounts of other important molecules including DNA, biochemical agents in terrorism warfare, explosives, viruses, and toxics.

  14. Colloidal nanorod heterostructures for photovoltaics and optoelectronics

    NASA Astrophysics Data System (ADS)

    Shim, Moonsub

    2017-05-01

    Colloidal quantum dots (QDs) synthesized in versatile, easy-to-process solutions are opening up exciting prospects in multiple areas, especially in biomedical imaging, photovoltaics, solid-state lighting and displays. The success of most of these prospects relies on high-quality heterostructures that improve optical properties. In particular, the core/shell heterostructure with a type I straddling band offset has been indispensable but the applicability is often limited to those exploiting only photoluminescence. QDs and their heterostructures can also be made with anisotropic shapes that allow access to essentially an unlimited number of combinations of size, shape and composition. Structures that allow enhancement of optical properties and physical accessibility for carrier injection/extraction simultaneously can open up new and exciting prospects in photovoltaics and optoelectronics. This topical review focuses on nanorod-based colloidal semiconductor heterostructures. Two-component, type II staggered band offset nanorod heterostructures capable of efficiently separating photoinduced charges are first discussed. Double heterojunction nanorods that contain three different phases are then considered with respect to their novelty and potential as emissive materials in light-emitting diodes. We conclude with an outlook on the possibility of developing colloidal nanorods that contain epitaxial interfaces beyond the conventional semiconductor heterojunctions.

  15. Superenhancers: Novel opportunities for nanowire optoelectronics

    PubMed Central

    Khudiyev, Tural; Bayindir, Mehmet

    2014-01-01

    Nanowires play a crucial role in the development of new generation optoelectronic devices ranging from photovoltaics to photodetectors, as these designs capitalize on the low material usage, utilize leaky-mode optical resonances and possess high conversion efficiencies associated with nanowire geometry. However, their current schemes lack sufficient absorption capacity demanded for their practical applicability, and more efficient materials cannot find widespread usage in these designs due to their rarity and cost. Here we suggest a novel and versatile nanoconcentrator scheme utilizing unique optical features of non-resonant Mie (NRM) scattering regime associated with low-index structures. The scattering regime is highly compatible with resonant Mie absorption effect taking place in nanowire absorbers. This technique in its optimized forms can provide up to 1500% total absorption enhancement, 400-fold material save and is suitable for large-area applications with significant area preservation compared to thin-film of same materials. Proposed superenhancer concept with its exceptional features such as broadband absorption enhancement, polarization immunity and material-independent manner paves the way for development of efficient nanowire photosensors or solar thermophotovoltaic devices and presents novel design opportunities for self-powered nanosystems. PMID:25511865

  16. Potentials and challenges for the optoelectronic oscillator

    NASA Astrophysics Data System (ADS)

    Zhou, Weimin; Okusaga, Olukayode; Levy, Etgar; Cahill, James; Docherty, Andrew; Menyuk, Curtis; Cater, Gary; Horowitz, Moshe

    2012-02-01

    We review our experimental and simulation-modeling studies on optoelectronic oscillators (OEOs). The OEO can have an intrinsic quality factor, Q that is orders of magnitude higher than that of the best electronic oscillators (i.e. Poseidon). However, our experimental results show that the OEO's current phase noise level is still worse than that of the Poseidon. This is caused by many noise sources in the OEO which reduce the "loaded-Q" in the loop system. In order to mitigate these noise sources, we have systematically studied such phenomena as the laser RIN, Brillouin and Rayleigh scattering in the fiber, vibration, etc. These noise sources are convoluted in both optical and electrical domains by many different physical effects; hence, it is very difficult to experimentally separate them, and only the dominant phase noise is observed in each offset-frequency. Therefore, we developed a computational model to simulate our experimental injection-locked dual-OEO system. By validating the model with our experimental results from both individual components and OEO loops, we can start to trace the individual phase noise sources. The goal is to use the validated model to guide our experiments to identify the dominant phase noise in each spectral region, and mitigate these noise sources so that the OEO can reach its full potential.

  17. Superenhancers: novel opportunities for nanowire optoelectronics.

    PubMed

    Khudiyev, Tural; Bayindir, Mehmet

    2014-12-16

    Nanowires play a crucial role in the development of new generation optoelectronic devices ranging from photovoltaics to photodetectors, as these designs capitalize on the low material usage, utilize leaky-mode optical resonances and possess high conversion efficiencies associated with nanowire geometry. However, their current schemes lack sufficient absorption capacity demanded for their practical applicability, and more efficient materials cannot find widespread usage in these designs due to their rarity and cost. Here we suggest a novel and versatile nanoconcentrator scheme utilizing unique optical features of non-resonant Mie (NRM) scattering regime associated with low-index structures. The scattering regime is highly compatible with resonant Mie absorption effect taking place in nanowire absorbers. This technique in its optimized forms can provide up to 1500% total absorption enhancement, 400-fold material save and is suitable for large-area applications with significant area preservation compared to thin-film of same materials. Proposed superenhancer concept with its exceptional features such as broadband absorption enhancement, polarization immunity and material-independent manner paves the way for development of efficient nanowire photosensors or solar thermophotovoltaic devices and presents novel design opportunities for self-powered nanosystems.

  18. Single carbon-nanotube photonics and optoelectronics

    NASA Astrophysics Data System (ADS)

    Kato, Yuichiro K.

    2015-03-01

    Single-walled carbon nanotubes have unique optical properties as a result of their one-dimensional structure. Not only do they exhibit strong polarization for both absorption and emission, large exciton binding energies allow for room-temperature excitonic luminescence. Furthermore, their emission is in the telecom-wavelengths and they can be directly synthesized on silicon substrates, providing new opportunities for nanoscale photonics and optoelectronics. Here we discuss the use of individual single-walled carbon nanotubes for generation, manipulation, and detection of light on a chip. Their emission properties can be controlled by coupling to silicon photonic structures such as photonic crystal microcavities and microdisk resonators. Simultaneous photoluminescence and photocurrent measurements show that excitons can dissociate spontaneously, enabling photodetection at low bias voltages despite the large binding energies. More recently, we have found that alternating gate-voltages can generate optical pulse trains from individual nanotubes. Ultimately, these results may be combined to achieve further control over photons at the nanoscale. Work supported by KAKENHI, The Canon Foundation, The Asahi Glass Foundation, and JSPS Open Partnership Joint Projects, as well as the Nanotechnology Platform and Photon Frontier Network Program of MEXT, Japan.

  19. Admin interface of Optoelectronics Research Center

    NASA Astrophysics Data System (ADS)

    Nicolae, Popescu R.; Schiopu, Paul

    2007-05-01

    The scope of the Optoelectronics Research Center website is to provide useful information about the center such as: member's cv, projects, conferences, as well as many other related information's. Based upon a worldwide study a visitor pay attention to a website for about 50-60 seconds, in this time he(she) is searching the website pages for the desired information, if the information it's found in this period the visitor will be pleased, if not he will look the information on other websites. For the CCO website a user-friendly environment has been designed, this interface has been severely tested, the results matching the 50-60 seconds time. In more than 80% of the cases the webmasters are not the same with the webdesigners; this is the point where the problems frequently occur. The content of a website has to be updated in order for visitors to get the proper information's, and not to be misled. To overcome this problem an administrator interface has been constructed. Using the admin interface the webmaster will easily update the whole website with only few clicks of a button, without need to know anything about programming or webdesign.

  20. Emissive polymeric materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John [Niskayuna, NY; Chichak, Kelly Scott [Clifton Park, NY; Cella, James Anthony [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Janora, Kevin Henry [Schenectady, NY

    2011-07-05

    Polymers including at least one structural unit derived from a compound of formula I or including at least one pendant group of formula II may be used in optoelectronic devices ##STR00001## wherein R.sup.1, R.sup.3, R.sup.4 and R.sup.6 are independently hydrogen, alkyl, alkoxy, oxaalkyl, alkylaryl, aryl, arylalkyl, heteroaryl, substituted alkyl; substituted alkoxy, substituted oxaalkyl, substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted heteroaryl; R.sup.1a is hydrogen or alkyl; R.sup.2 is alkylene, substituted alkylene, oxaalkylene, CO, or CO.sub.2; R.sup.2a is alkylene; R.sup.5 is independently at each occurrence hydrogen, alkyl, alkylaryl, aryl, arylalkyl, alkoxy, carboxy, substituted alkyl; substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted alkoxy, X is halo, triflate, --B(OR.sup.1a).sub.2, or ##STR00002## located at the 2, 5- or 2, 7-positions; and L is derived from phenylpyridine, tolylpyridine, benzothienylpyridine, phenylisoquinoline, dibenzoquinozaline, fluorenylpyridine, ketopyrrole, 2-(1-naphthyl)benzoxazole)), 2-phenylbenzoxazole, 2-phenylbenzothiazole, coumarin, thienylpyridine, phenylpyridine, benzothienylpyridine, 3-methoxy-2-phenylpyridine, thienylpyridine, phenylimine, vinylpyridine, pyridylnaphthalene, pyridylpyrrole, pyridylimidazole, phenylindole, derivatives thereof or combinations thereof.

  1. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY

    2011-11-08

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## wherein R.sup.1 and R.sup.2 are independently alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.5is H or CHO; R.sup.3 and R.sup.4 are independently hydrogen, alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.11 and R.sup.12 taken together form a substituted or unsubstituted monocyclic or bicyclic heteroaromatic ring; R.sup.13 is independently at each occurrence halo, nitro, hydroxy, amino, alkyl, aryl, arylalkyl, alkoxy, substituted alkoxy, substituted alkyl, substituted aryl, or substituted arylalkyl; Ar is aryl, heteroaryl, substituted aryl, substituted heteroaryl, or a combination thereof; X is selected from a direct bond, alky, substituted alkyl, and combinations thereof; Y is CHO or NH.sub.2; Z is CHO or NH.sub.2 where Z does not equal Y; and p is 0, 1 or 2. The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  2. GaAs-based optoelectronic neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H. (Inventor); Kim, Jae H. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

  3. Optical and optoelectronic properties of organic nanomaterials

    NASA Astrophysics Data System (ADS)

    Satapathi, Soumitra

    In this dissertation research, organic nanomaterials, such as semiconducting polymer nanoparticles, graphene nanosheets and organic small molecules were successfully utilized for fabrication of organic solar cells, optical sensors and for high contrast imaging of cancer cells. Semiconducting polymer nanoparticles were synthesized by a simple miniemulsion technique. These size controllable polymeric nanoparticles were proven to be able to optimize the morphologies of the bulk heterojunction solar cells and to provide fundamental insight into the evolution of the nanostructures. Highly sensitive optical sensors were fabricated using these polymeric nanoparticles for efficient detection of nitroaromatic explosives, such as 2,4 dinitrotoluene (DNT) and 2,4,6 trinitrotoluene (TNT) in aqueous medium as well as in vapor the phase. Moreover, these water dispersible and fluorescent polymer nanodots were two-photon active and could be internalized by tumor cells as demonstrated by two-photon confocal imaging. In addition to the polymer nanoparticles, the role of the graphene nanosheets in the performance enhancement of dye sensitized solar cells was also investigated. The use of organic small molecules for optical sensing of different nerve gas agents and their potential use in multiphoton imaging of cancer cells were discussed. Controlling material properties at nanoscale for optoelectronics and imaging application as discussed in this dissertation would provide new dimensions in the areas of applied physics and materials science researches.

  4. Optoelectronic devices incorporating fluoropolymer compositions for protection

    SciTech Connect

    Chen, Xuming; Chum, Pak-Wing S.; Howard, Kevin E.; Lopez, Leonardo C.; Sumner, William C.; Wu, Shaofu

    2015-12-22

    The fluoropolymer compositions of the present invention generally incorporate ingredients comprising one or more fluoropolymers, an ultraviolet light protection component (hereinafter UV protection component), and optionally one or more additional ingredients if desired. The UV protection component includes a combination of at least one hindered tertiary amine (HTA) compound having a certain structure and a weight average molecular weight of at least 1000. This tertiary amine is used in combination with at least one organic, UV light absorbing compound (UVLA compound) having a weight average molecular weight greater than 500. When the HTA compound and the UVLA compound are selected according to principles of the present invention, the UV protection component provides fluoropolymer compositions with significantly improved weatherability characteristics for protecting underlying materials, features, structures, components, and/or the like. In particular, fluoropolymer compositions incorporating the UV protection component of the present invention have unexpectedly improved ability to resist blackening, coloration, or other de gradation that may be caused by UV exposure. As a consequence, devices protected by these compositions would be expected to have dramatically improved service life. The compositions have a wide range of uses but are particularly useful for forming protective layers in optoelectronic devices.

  5. Nanosized optoelectronic devices based on photoactivated proteins.

    PubMed

    Dimonte, Alice; Frache, Stefano; Erokhin, Victor; Piccinini, Gianluca; Demarchi, Danilo; Milano, Francesco; Micheli, Giovanni De; Carrara, Sandro

    2012-11-12

    Molecular nanoelectronics is attracting much attention, because of the possibility to add functionalities to silicon-based electronics by means of intrinsically nanoscale biological or organic materials. The contact point between active molecules and electrodes must present, besides nanoscale size, a very low resistance. To realize Metal-Molecule-Metal junctions it is, thus, mandatory to be able to control the formation of useful nanometric contacts. The distance between the electrodes has to be of the same size of the molecule being put in between. Nanogaps technology is a perfect fit to fulfill this requirement. In this work, nanogaps between gold electrodes have been used to develop optoelectronic devices based on photoactive proteins. Reaction Centers (RC) and Bacteriorhodopsin (BR) have been inserted in nanogaps by drop casting. Electrical characterizations of the obtained structures were performed. It has been demonstrated that these nanodevices working principle is based on charge separation and photovoltage response. The former is induced by the application of a proper voltage on the RC, while the latter comes from the activation of BR by light of appropriate wavelengths.

  6. Recent progress in opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute

    2005-01-01

    The optoelectronic oscillator (OEO) is a unique device based on photonics techniques to generate highly spectrally pure microwave signals [1]. The development of the OEO was motivated by the need for high performance oscillators in the frequency range larger than 10 GHz, where conventional electronic oscillators have a number of limitations. These limitations typically stem from the product of fQ, where f is the oscillator frequency and Q is the quality factor of the resonator in the oscillator. In conventional resonators, whether electromagnetic or piezoelectric, this product is usually a constant. Thus, as the oscillator frequency is pushed higher, the quality factor degrades, resulting in degradation of the phase noise of the oscillator. An approach to mitigate the problem is to start with a very high quality signal in the 5 to 100 MHz range generated by a quartz oscillator and multiply the frequency to achieve the desired microwave signal. Here again, frequency multiplication also results in an increase of the phase noise by a factor of 2010gN, where N is the multiplication factor.

  7. Physical and material science aspects of integrated optoelectronics

    NASA Astrophysics Data System (ADS)

    Ermakov, Oleg N.

    2007-05-01

    Physical, material science and technological aspects (adequate material and substrate choice, different physical effects and limitations of modern simulation methods) are discussed. Analysis of modern microelectronics and optoelectronics development trends shows that rigid boundaries between microoelectronics and optoelectronics are smearing. Wide materials range previously used only in optoelectronics ( A 3 B 5 - , A2 B 6 -, A 4 B 4 - compounds, their sold alloys, diamond, organic material etc.) are now of interest for LSI designers also. Although wide range of different substrates types (organic and inorganic, single crystalline and amorphous, rigid and flexible) are now used in optoelectronics optically transparent and electrically insulating substrates are preferable for integrated optoelectronics. One type of such substrates namely sapphire is of essential practical interest now because silicon on sapphire (SOS) structures are used for LSI implementation and gallium nitride and its alloys on sapphire stwctures (GNS) are used for super bright LEDs, LDs and photodetectors fabrication. Special attention is paid to optical properties of organic structures as very promising media both for integrated optoelectronics and microelectronics. Different physical effects (band structure, quantum, disorder, strain, carrier heating effects) as well as limitations of modern simulation methods are discussed.

  8. Optoelectronic System Measures Distances to Multiple Targets

    NASA Technical Reports Server (NTRS)

    Liebe, Carl Christian; Abramovici, Alexander; Bartman, Randall; Chapsky, Jacob; Schmalz, John; Coste, Keith; Litty, Edward; Lam, Raymond; Jerebets, Sergei

    2007-01-01

    An optoelectronic metrology apparatus now at the laboratory-prototype stage of development is intended to repeatedly determine distances of as much as several hundred meters, at submillimeter accuracy, to multiple targets in rapid succession. The underlying concept of optoelectronic apparatuses that can measure distances to targets is not new; such apparatuses are commonly used in general surveying and machining. However, until now such apparatuses have been, variously, constrained to (1) a single target or (2) multiple targets with a low update rate and a requirement for some a priori knowledge of target geometry. When fully developed, the present apparatus would enable measurement of distances to more than 50 targets at an update rate greater than 10 Hz, without a requirement for a priori knowledge of target geometry. The apparatus (see figure) includes a laser ranging unit (LRU) that includes an electronic camera (photo receiver), the field of view of which contains all relevant targets. Each target, mounted at a fiducial position on an object of interest, consists of a small lens at the output end of an optical fiber that extends from the object of interest back to the LRU. For each target and its optical fiber, there is a dedicated laser that is used to illuminate the target via the optical fiber. The targets are illuminated, one at a time, with laser light that is modulated at a frequency of 10.01 MHz. The modulated laser light is emitted by the target, from where it returns to the camera (photodetector), where it is detected. Both the outgoing and incoming 10.01-MHz laser signals are mixed with a 10-MHz local-oscillator to obtain beat notes at 10 kHz, and the difference between the phases of the beat notes is measured by a phase meter. This phase difference serves as a measure of the total length of the path traveled by light going out through the optical fiber and returning to the camera (photodetector) through free space. Because the portion of the path

  9. Designed self-organization for molecular optoelectronics

    NASA Astrophysics Data System (ADS)

    Norton, Michael; Neff, David; Towler, Ian; Day, Scott; Grambos, Zachary; Shremshock, Mikala; Butts, Heather; Meadows, Christiaan; Samiso, Yuko; Cao, Huan; Rahman, Mashiur

    2006-05-01

    The convergence of terahertz spectroscopy and single molecule experimentation offer significant promise of enhancement in sensitivity and selectivity in molecular recognition, identification and quantitation germane to military and security applications. This presentation reports the results of experiments which address fundamental barriers to the integration of large, patterned bio-compatible molecular opto-electronic systems with silicon based microelectronic systems. The central thrust of this approach is sequential epitaxy on surface bound single stranded DNA one-dimensional substrates. The challenge of producing highly structured macromolecular substrates, which are necessary in order to implement molecular nanolithography, has been addressed by combining "designer" synthetic DNA with biosynthetically derived plasmid components. By design, these one dimensional templates are composed of domains which contain sites which are recognized, and therefore addressable by either complementary DNA sequences and/or selected enzymes. Such design is necessary in order to access the nominal 2 nm linewidth potential resolution of nanolithography on these one-dimensional substrates. The recognition and binding properties of DNA ensure that the lithographic process is intrinsically self-organizing, and therefore self-aligning, a necessity for assembly processes at the requisite resolution. Another requirement of this molecular epitaxy approach is that the substrate must be immobilized. The challenge of robust surface immobilization is being addressed via the production of the equivalent of molecular tube sockets. In this application, multi-valent core-shell fluorescent quantum dots provide a mechanism to prepare surface attachment sites with a pre-determined 1:1 attachment site : substrate (DNA) molecule ratio.

  10. Semiselective Optoelectronic Sensors for Monitoring Microbes

    NASA Technical Reports Server (NTRS)

    Tabacco, Mary Beth; Chuang, Han; Taylor,Laura; Russo, Jaime

    2003-01-01

    Sensor systems are under development for use in real-time detection and quantitation of microbes in water without need for sampling. These systems include arrays of optical sensors; miniature, portable electronic data-acquisition circuits; and optoelectronic interfaces between the sensor arrays and data-acquisition circuits. These systems are intended for original use in long-term, inline monitoring of waterborne micro-organisms in water-reclamation systems aboard future spacecraft. They could also be adapted to similar terrestrial uses with respect to municipal water supplies, stored drinking water, and swimming water; for detecting low-level biological contamination in biotechnological, semiconductor, and pharmaceutical process streams; and in verifying the safety of foods and beverages. In addition, they could be adapted to monitoring of airborne microbes and of surfaces (e.g., to detect and/or quantitate biofilms). The designs of the sensors in these systems are based partly on those of sensors developed previously for monitoring airborne biological materials. The designs exploit molecular- recognition and fluorescence-spectroscopy techniques, such that in the presence of micro-organisms of interest, fluorescence signals change and the changes can be measured. These systems are characterized as semiselective because they respond to classes of micro-organisms and can be used to discriminate among the classes. This semiselectivity is a major aspect of the design: It is important to distinguish between (1) the principle of detection and quantitation of classes of micro-organisms by use of these sensors and (2) the principle of detection and quantitation of individual microbiological species by means of prior immuno-diagnostic and/or molecular-biology techniques. Detection of classes (in contradistinction to species) is particularly valuable when the exact nature of a contaminant is unknown.

  11. Optoelectronic properties of hexagonal boron nitride epilayers

    NASA Astrophysics Data System (ADS)

    Cao, X. K.; Majety, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2013-01-01

    This paper summarizes recent progress primarily achieved in authors' laboratory on synthesizing hexagonal boron nitride (hBN) epilayers by metal organic chemical vapor deposition (MCVD) and studies of their structural and optoelectronic properties. The structural and optical properties of hBN epilayers have been characterized by x-ray diffraction (XRD) and photoluminescence (PL) studies and compared to the better understood wurtzite AIN epilayers with a comparable energy bandgap. These MOCVD grown hBN epilayers exhibit highly efficient band-edge PL emission lines centered at around 5.5 eVat room temperature. The band-edge emission of hBN is two orders of magnitude higher than that of high quality AlN epilayers. Polarization-resolved PL spectroscopy revealed that hEN epilayers are predominantly a surface emission material, in which the band-edge emission with electric field perpendicular to the c-axis (Eemi⊥c) is about 1.7 times stronger than the component along the c-axis (Eemillc). This is in contrast to AIN, in which the band­ edge emission is known to be polarized along the c-axis, (Eemillc). Based on the graphene optical absorption concept, the estimated band-edge absorption coefficient of hBN is about 7x105 cm-1, which is more than 3 times higher than the value for AlN (~2x105 cm-1 . The hBN epilayer based photodetectors exhibit a sharp cut-off wavelength around 230 nm, which coincides with the band-edge PL emission peak and virtually no responses in the long wavelengths. The dielectric strength of hBN epilayers exceeds that of AlN and is greater than 4.5 MV/cm based on the measured result for an hBN epilayer released from the host sapphire substrate.

  12. Toward high-resolution optoelectronic retinal prosthesis

    NASA Astrophysics Data System (ADS)

    Palanker, Daniel; Huie, Philip; Vankov, Alexander; Asher, Alon; Baccus, Steven

    2005-04-01

    It has been already demonstrated that electrical stimulation of retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. Current retinal implants provide very low resolution (just a few electrodes), while several thousand pixels are required for functional restoration of sight. We present a design of the optoelectronic retinal prosthetic system that can activate a retinal stimulating array with pixel density up to 2,500 pix/mm2 (geometrically corresponding to a visual acuity of 20/80), and allows for natural eye scanning rather than scanning with a head-mounted camera. The system operates similarly to "virtual reality" imaging devices used in military and medical applications. An image from a video camera is projected by a goggle-mounted infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. Such a system provides a broad field of vision by allowing for natural eye scanning. The goggles are transparent to visible light, thus allowing for simultaneous utilization of remaining natural vision along with prosthetic stimulation. Optical control of the implant allows for simple adjustment of image processing algorithms and for learning. A major prerequisite for high resolution stimulation is the proximity of neural cells to the stimulation sites. This can be achieved with sub-retinal implants constructed in a manner that directs migration of retinal cells to target areas. Two basic implant geometries are described: perforated membranes and protruding electrode arrays. Possibility of the tactile neural stimulation is also examined.

  13. Optoelectronic Sensor System for Guidance in Docking

    NASA Technical Reports Server (NTRS)

    Howard, Richard T.; Bryan, Thomas C.; Book, Michael L.; Jackson, John L.

    2004-01-01

    The Video Guidance Sensor (VGS) system is an optoelectronic sensor that provides automated guidance between two vehicles. In the original intended application, the two vehicles would be spacecraft docking together, but the basic principles of design and operation of the sensor are applicable to aircraft, robots, vehicles, or other objects that may be required to be aligned for docking, assembly, resupply, or precise separation. The system includes a sensor head containing a monochrome charge-coupled- device video camera and pulsed laser diodes mounted on the tracking vehicle, and passive reflective targets on the tracked vehicle. The lasers illuminate the targets, and the resulting video images of the targets are digitized. Then, from the positions of the digitized target images and known geometric relationships among the targets, the relative position and orientation of the vehicles are computed. As described thus far, the VGS system is based on the same principles as those of the system described in "Improved Video Sensor System for Guidance in Docking" (MFS-31150), NASA Tech Briefs, Vol. 21, No. 4 (April 1997), page 9a. However, the two systems differ in the details of design and operation. The VGS system is designed to operate with the target completely visible within a relative-azimuth range of +/-10.5deg and a relative-elevation range of +/-8deg. The VGS acquires and tracks the target within that field of view at any distance from 1.0 to 110 m and at any relative roll, pitch, and/or yaw angle within +/-10deg. The VGS produces sets of distance and relative-orientation data at a repetition rate of 5 Hz. The software of this system also accommodates the simultaneous operation of two sensors for redundancy

  14. Mineralogy of the Northwestern Slopes of Mt Sharp, Gale Crater, as Observed Using Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) Along-track Oversampled observations

    NASA Astrophysics Data System (ADS)

    Fox, V. K.; Arvidson, R. E.; Fraeman, A. A.

    2016-12-01

    Three Along-Track Oversampled CRISM observations of the northwestern slopes of Gale Crater provide 12 m/pixel hyperspectral data where the Mars Science Laboratory Curiosity Rover plans to traverse during its extended missions. Atmospheric contributions from dust and ice aerosols, CO2, CO, and H2O gases are removed using Discrete Ordinates Radiative Transfer (DISORT), and the surface boundary layer is modeled using the Hapke function, accounting for local topography and lighting geometries. CRISM scenes are regularized using an iterative maximum log-likelihood algorithm with side penalties to retrieve the best signal in the presence of Poisson noise for the wavelength region from 0.4 to 2.65 micrometers. This processing methodology allows for mineralogical mapping in higher spatial detail than previous studies of the region and better discrimination between mineral species in discrete stratigraphic layers. Determining the relationship between mineralogy and stratigraphy is necessary to understand the changing environmental conditions recorded in Gale Crater. CRISM-based detections of minerals produced in aqueous environments may be used to help define the exploration goals of the Curiosity Mars Science Laboratory.

  15. An efficient algorithm coupled with synthetic minority over-sampling technique to classify imbalanced PubChem BioAssay data.

    PubMed

    Hao, Ming; Wang, Yanli; Bryant, Stephen H

    2014-01-02

    It is common that imbalanced datasets are often generated from high-throughput screening (HTS). For a given dataset without taking into account the imbalanced nature, most classification methods tend to produce high predictive accuracy for the majority class, but significantly poor performance for the minority class. In this work, an efficient algorithm, GLMBoost, coupled with Synthetic Minority Over-sampling TEchnique (SMOTE) is developed and utilized to overcome the problem for several imbalanced datasets from PubChem BioAssay. By applying the proposed combinatorial method, those data of rare samples (active compounds), for which usually poor results are generated, can be detected apparently with high balanced accuracy (Gmean). As a comparison with GLMBoost, Random Forest (RF) combined with SMOTE is also adopted to classify the same datasets. Our results show that the former (GLMBoost+SMOTE) not only exhibits higher performance as measured by the percentage of correct classification for the rare samples (Sensitivity) and Gmean, but also demonstrates greater computational efficiency than the latter (RF+SMOTE). Therefore, we hope that the proposed combinatorial algorithm based on GLMBoost and SMOTE could be extensively used to tackle the imbalanced classification problem.

  16. Low-cost packaging of high-performance optoelectronic components

    SciTech Connect

    Lowry, M.; Lu, Shin-Yee; Pocha, M.; Strand, O.T.

    1994-08-01

    Optoelectronic component costs are often dominated by the costs of attaching fiber optic pigtails--especially for the case of single transverse mode devices. We present early results of our program in low-cost packaging. We are employing machine-vision controlled automated positioning and silicon microbench technology to reduce the costs of optoelectronic components. Our machine vision approach to automated positioning has already attained a positional accuracy of less than 5 microns in less than 5 minutes; accuracies and times are expected to improve significantly as the development progresses. Complementing the machine vision assembly is our manufacturable approach to silicon microbench technology. We will describe our silicon microbench optoelectronic device packages that incorporate built-in heaters for solder bonding reflow.

  17. Optoelectronics based on 2D TMDs and heterostructures

    NASA Astrophysics Data System (ADS)

    Huo, Nengjie; Yang, Yujue; Li, Jingbo

    2017-03-01

    2D materials including graphene and TMDs have proven interesting physical properties and promising optoelectronic applications. We reviewed the growth, characterization and optoelectronics based on 2D TMDs and their heterostructures, and demonstrated their unique and high quality of performances. For example, we observed the large mobility, fast response and high photo-responsivity in MoS2, WS2 and WSe2 phototransistors, as well as the novel performances in vdW heterostructures such as the strong interlayer coupling, am-bipolar and rectifying behaviour, and the obvious photovoltaic effect. It is being possible that 2D family materials could play an increasingly important role in the future nano- and opto-electronics, more even than traditional semiconductors such as silicon.

  18. Optoelectronic implementation of multilayer perceptron and Hopfield neural networks

    NASA Astrophysics Data System (ADS)

    Domanski, Andrzej W.; Olszewski, Mikolaj K.; Wolinski, Tomasz R.

    2004-11-01

    In this paper we present an optoelectronic implementation of two networks based on multilayer perceptron and the Hopfield neural network. We propose two different methods to solve a problem of lack of negative optical signals that are necessary for connections between layers of perceptron as well as within the Hopfield network structure. The first method applied for construction of multilayer perceptron was based on division of signals into two channels and next to use both of them independently as positive and negative signals. The second one, applied for implementation of the Hopfield model, was based on adding of constant value for elements of matrix weight. Both methods of compensation of lack negative optical signals were tested experimentally as optoelectronic models of multilayer perceptron and Hopfield neural network. Special configurations of optical fiber cables and liquid crystal multicell plates were used. In conclusion, possible applications of the optoelectronic neural networks are briefly discussed.

  19. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOEpatents

    Shtein, Max; Yang, Fan; Forrest, Stephen R.

    2008-10-14

    A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

  20. Vertical Organic Field-Effect Transistors for Integrated Optoelectronic Applications.

    PubMed

    Yu, Hyeonggeun; Dong, Zhipeng; Guo, Jing; Kim, Doyoung; So, Franky

    2016-04-27

    Direct integration of a vertical organic field-effect transistor (VOFET) and an optoelectronic device offers a single stacked, low power optoelectronic VOFET with high aperture ratios. However, a functional optoelectronic VOFET could not be realized because of the difficulty in fabricating transparent source and gate electrodes. Here, we report a VOFET with an on/off ratio up to 10(5) as well as output current saturation by fabricating a transparent gate capacitor consisting of a perforated indium tin oxide (ITO) source electrode, HfO2 gate dielectric, and ITO gate electrode. Effects of the pore size and the pore depth within the porous ITO electrodes on the on/off characteristic of a VOFET are systematically explained in this work. By combining a phosphorescent organic light-emitting diode with an optimized VOFET structure, a vertical organic light-emitting transistor with a luminance on/off ratio of 10(4) can be fabricated.

  1. Optoelectronic devices, plasmonics, and photonics with topological insulators

    NASA Astrophysics Data System (ADS)

    Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.

    2017-03-01

    Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.

  2. Optoelectronic Infrastructure for Radio Frequency and Optical Phased Arrays

    NASA Technical Reports Server (NTRS)

    Cai, Jianhong

    2015-01-01

    Optoelectronic integrated circuits offer radiation-hardened solutions for satellite systems in addition to improved size, weight, power, and bandwidth characteristics. ODIS, Inc., has developed optoelectronic integrated circuit technology for sensing and data transfer in phased arrays. The technology applies integrated components (lasers, amplifiers, modulators, detectors, and optical waveguide switches) to a radio frequency (RF) array with true time delay for beamsteering. Optical beamsteering is achieved by controlling the current in a two-dimensional (2D) array. In this project, ODIS integrated key components to produce common RF-optical aperture operation.

  3. High bandgap III-V alloys for high efficiency optoelectronics

    DOEpatents

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  4. A reconfigurable optoelectronic interconnect technology for multi-processor networks

    SciTech Connect

    Lu, Y.C.; Cheng, J.; Zolper, J.C.; Klem, J.

    1995-05-01

    This paper describes a new optical interconnect architecture and the integrated optoelectronic circuit technology for implementing a parallel, reconfigurable, multiprocessor network. The technology consists of monolithic array`s of optoelectronic switches that integrate vertical-cavity surface-emitting lasers with three-terminal heterojunction phototransistors, which effectively combined the functions of an optical transceiver and an optical spatial routing switch. These switches have demonstrated optical switching at 200 Mb/s, and electrical-to-optical data conversion at > 500 Mb/s, with a small-signal electrical-to-optical modulation bandwidth of {approximately} 4 GHz.

  5. Magnetometer Based on the Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute

    2005-01-01

    We theoretically propose and discuss properties of two schemes of an all-optical self-oscillating magnetometer based on an opto-electronic oscillator stabilized with an atomic vapor cell. Proof of the principle DC magnetic field measurements characterized with 2 x 10(exp -7) G sensitivity and 1 - 1000 mG dynamic range in one of the schemes are demonstrated.

  6. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R [Newton, MA

    2011-02-22

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  7. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R.

    2013-04-09

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  8. Ultrafast Broadband Photodetectors for High-Tc Superconductive Optoelectronics

    DTIC Science & Technology

    1997-01-01

    TITLE AND SUBTITLE Ultrafast Broadband Photodetectors for High-Tc Supercondcutive Optoelectronics 6. AUTHOR(S) Dr. Roman Sobolewski (PI) Dr...The rapid suppression of the Maki-Thompson process for the oxygen-deficient YBCO films, indicated an unconventional symmetry of the superconducting

  9. Microwave filter based on Lamb modes for optoelectronic generator

    NASA Astrophysics Data System (ADS)

    Vitko, V. V.; Nikitin, A. A.; Kondrashov, A. V.; Nikitin, A. A.; Ustinov, A. B.; Belyavskiy, P. Yu; Kalinikos, B. A.; Butler, J. E.

    2015-12-01

    Experimental results for narrowband filter based on yttrium iron garnet film epitaxially grown on gadolinium gallium garnet substrate have been shown. The principle of operation of the filter is based on excitation of Lamb modes in the substrate. We demonstrated also that the use of single crystal diamond as a substrate will significantly reduce the phase noise of the designed optoelectronic microwave generator.

  10. Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

    DOEpatents

    Thompson, Mark E [Anaheim Hills, CA; Li, Jian [Los Angeles, CA; Forrest, Stephen [Princeton, NJ; Rand, Barry [Princeton, NJ

    2011-02-22

    An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

  11. Simultaneous thermoelectric and optoelectronic characterization of individual nanowires

    SciTech Connect

    Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; Martinez, Julio A.; Song, Erdong; Li, Qiming

    2015-11-03

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

  12. An Active Metamaterial Platform for Chiral Responsive Optoelectronics.

    PubMed

    Kang, Lei; Lan, Shoufeng; Cui, Yonghao; Rodrigues, Sean P; Liu, Yongmin; Werner, Douglas H; Cai, Wenshan

    2015-08-05

    Chiral-selective non-linear optics and optoelectronic signal generation are demonstrated in an electrically active photonic metamaterial. The metamaterial reveals significant chiroptical responses in both harmonic generation and the photon drag effect, correlated to the resonance behavior in the linear regime. The multifunctional chiral metamaterial with dual electrical and optical functionality enables transduction of chiroptical responses to electrical signals for integrated photonics.

  13. Magnetometer Based on the Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute

    2005-01-01

    We theoretically propose and discuss properties of two schemes of an all-optical self-oscillating magnetometer based on an opto-electronic oscillator stabilized with an atomic vapor cell. Proof of the principle DC magnetic field measurements characterized with 2 x 10(exp -7) G sensitivity and 1 - 1000 mG dynamic range in one of the schemes are demonstrated.

  14. Automatized convergence of optoelectronic simulations using active machine learning

    NASA Astrophysics Data System (ADS)

    Rouet-Leduc, Bertrand; Hulbert, Claudia; Barros, Kipton; Lookman, Turab; Humphreys, Colin J.

    2017-07-01

    A fundamental problem of optoelectronic simulations is to achieve convergence. We use statistical analysis and machine learning to effectively guide the selection of the next device to be examined based upon the expected convergence of the simulation. This active learning strategy rapidly constructs a model that predicts Poisson-Schrödinger simulations of devices and that simultaneously produces fully converged simulations.

  15. Optoelectronic Components and Integration Devices: From Concepts to Applications

    DTIC Science & Technology

    2003-04-01

    The fourth part addresses optoelectronic integration techniques such as monolithic integration of different functions but also fiber chip coupling...voltage operation, large bandwidth and monolithic integration with other components such as laser diodes. In Fig. 4 an EAM is sketched which has been...achieved simultaneously. A novel multifunctional device has recently been presented, the electroabsorption modulator integrated into the structure of a

  16. Optoelectronic fuzzy associative memory with controllable attraction basin sizes

    NASA Astrophysics Data System (ADS)

    Wen, Zhiqing; Campbell, Scott; Wu, Weishu; Yeh, Pochi

    1995-10-01

    We propose and demonstrate a new fuzzy associative memory model that provides an option to control the sizes of the attraction basins in neural networks. In our optoelectronic implementation we use spatial/polarization encoding to represent the fuzzy variables. Shadow casting of the encoded patterns is employed to yield the fuzzy-absolute difference between fuzzy variables.

  17. The Use of Opto-Electronics in Viscometry.

    ERIC Educational Resources Information Center

    Mazza, R. J.; Washbourn, D. H.

    1982-01-01

    Describes a semi-automatic viscometer which incorporates a microprocessor system and uses optoelectronics to detect flow of liquid through the capillary, flow time being displayed on a timer with accuracy of 0.01 second. The system could be made fully automatic with an additional microprocessor circuit and inclusion of a pump. (Author/JN)

  18. Parallel optical interconnects - Implementation of optoelectronics in multiprocessor architectures

    NASA Astrophysics Data System (ADS)

    Frietman, E. E. E.; Dekker, L.; van Nifterick, W.; Jongeling, T. J. M.

    1990-03-01

    Optoelectronic logic element circuitries are described which can be used for the implementation of a wide variety of interconnection schemes. Particular attention is given to the design, construction, and application of an electrooptic communication system (EOCS) using dedicated free space multiple data distributors and integrated optically writable input buffer arrays with fully parallel access. Some experimental results obtained on the complete EOCS are presented.

  19. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    PubMed

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems.

  20. The Use of Opto-Electronics in Viscometry.

    ERIC Educational Resources Information Center

    Mazza, R. J.; Washbourn, D. H.

    1982-01-01

    Describes a semi-automatic viscometer which incorporates a microprocessor system and uses optoelectronics to detect flow of liquid through the capillary, flow time being displayed on a timer with accuracy of 0.01 second. The system could be made fully automatic with an additional microprocessor circuit and inclusion of a pump. (Author/JN)

  1. Optoelectronic and photovoltaic devices with low-reflectance surfaces

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A. (Inventor); Jenkins, Phillip P. (Inventor)

    1993-01-01

    Low angle V-grooves are provided in the target surfaces of optoelectronic or photovoltaic devices such as solar cells and photodetectors. The low angle V-grooves increase the efficiency of the devices by promoting total internal reflection of light reflected from the target surface at the interface of the coverglass and the external environment.

  2. Optoelectronic implementation of bipolar analog neural network using shadow casting

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Tanida, Jun; Itoh, Kazuyoshi; Ichioka, Yoshiki

    1990-07-01

    Based on the optical shadow casting technique, an optoelectronic implementation of a neural network with bipolar analog neurons and interconnection weights is proposed. Experimental results of an associative memory based on the Hopfield model using the proposed method are also described.

  3. Intersatellite communications optoelectronics research at the Goddard Space Flight Center

    NASA Technical Reports Server (NTRS)

    Krainak, Michael A.

    1992-01-01

    A review is presented of current optoelectronics research and development at the NASA Goddard Space Flight Center for high-power, high-bandwidth laser transmitters; high-bandwidth, high-sensitivity optical receivers; pointing, acquisition, and tracking components; and experimental and theoretical system modeling at the NASA Goddard Space Flight Center. Program hardware and space flight opportunities are presented.

  4. Design and Packaging of Fault Tolerant Optoelectronic Multiprocessor Computing System

    DTIC Science & Technology

    1993-12-14

    crystals in packaging design and to assemble packaged fault tolerant systems using the developed technologies. On the secondary basis, we would model...optoelectronic packaging for free-space optical interconnect alters the nature of electrical packaging design methodologies, as well as the complexity of

  5. Control over multifunctionality in optoelectronic device based on organic phototransistor.

    PubMed

    Mukherjee, Biswanath; Mukherjee, Moumita; Choi, Youngill; Pyo, Seungmoon

    2010-06-01

    Highly stable, reproducible, photosensitive organic field-effect transistors based on an n-type organic material, copper hexadecafluorophthalocyanine, and two different polymeric gate dielectrics has been reported and their performances have been compared by evaluating the surface/interface properties. The devices produced a maximum photocurrent gain (I(light)/I(dark)) of 79 at V(G) = 7 V and showed the potentiality as multifunctional optoelectronic switching applications depending upon the external pulses. The switching time of the transistor upon irradiation of light pulse, i.e., the photoswitching time of the device, was measured to be approximately 10 ms. On the basis of optical or combination of optical and electrical pulses, the electronic/optoelectronic properties of the device can be tuned efficiently. The multifunctions achieved by the single device can ensure very promising material for high density RAM and other optoelectronic applications. Furthermore, as the device geometry in the present work is not limited to rigid substrate only, it will lead to the development of flexible organic optoelectronic switch compatible with plastic substrates.

  6. Intersatellite communications optoelectronics research at the Goddard Space Flight Center

    NASA Astrophysics Data System (ADS)

    Krainak, Michael A.

    1992-09-01

    A review is presented of current optoelectronics research and development at the NASA Goddard Space Flight Center for high-power, high-bandwidth laser transmitters; high-bandwidth, high-sensitivity optical receivers; pointing, acquisition, and tracking components; and experimental and theoretical system modeling at the NASA Goddard Space Flight Center. Program hardware and space flight opportunities are presented.

  7. Simultaneous thermoelectric and optoelectronic characterization of individual nanowires

    DOE PAGES

    Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; ...

    2015-11-03

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrentmore » observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.« less

  8. Stabilizing an optoelectronic microwave oscillator with photonic filters

    NASA Technical Reports Server (NTRS)

    Strekalov, D.; Aveline, D.; Yu, N.; Thompson, R.; Matsko, A. B.; Maleki, L.

    2003-01-01

    This paper compares methods of active stabilization of an optoelectronic microwave oscillator (OEO) based on insertion of a source of optical group delay into an OEO loop. The performance of an OEO stabilized with either a high- optical cavity or an atomic cell is analyzed. We show that the elements play a role of narrow-band microwave filters improving an OEO stability.

  9. New Results with the Opto-Electronic Oscillators (OEO)

    NASA Technical Reports Server (NTRS)

    Yao, S.; Maleki, L.

    1996-01-01

    A new class of oscillators based on photonic devices is presented. These opto-electronic oscillators (OEOs) generate microwave oscillation by converting continuous energy from a light source using a feedback circuit which includes a delay element, an electro-optic switch, and a photodetctor.

  10. Pulse-train solutions and excitability in an optoelectronic oscillator

    NASA Astrophysics Data System (ADS)

    Rosin, D. P.; Callan, K. E.; Gauthier, D. J.; Schöll, E.

    2011-11-01

    We study an optoelectronic time-delay oscillator with bandpass filtering for different values of the filter bandwidth. Our experiments show novel pulse-train solutions with pulse widths that can be controlled over a three-order-of-magnitude range, with a minimum pulse width of ~150 ps. The equations governing the dynamics of our optoelectronic oscillator are similar to the FitzHugh-Nagumo model from neurodynamics with delayed feedback in the excitable and oscillatory regimes. Using a nullclines analysis, we derive an analytical proportionality between pulse width and the low-frequency cutoff of the bandpass filter, which is in agreement with experiments and numerical simulations. Furthermore, the nullclines help to describe the shape of the waveforms.

  11. Widrow-cellular neural network and optoelectronic implementation

    NASA Astrophysics Data System (ADS)

    Bal, Abdullah

    A new type of optoelectronic cellular neural network has been developed by providing the capability of coefficients adjusment of cellular neural network (CNN) using Widrow based perceptron learning algorithm. The new supervised cellular neural network is called Widrow-CNN. Despite the unsupervised CNN, the proposed learning algorithm allows to use the Widrow-CNN for various image processing applications easily. Also, the capability of CNN for image processing and feature extraction has been improved using basic joint transform correlation architecture. This hardware application presents high speed processing capability compared to digital applications. The optoelectronic Widrow-CNN has been tested for classic CNN feature extraction problems. It yields the best results even in case of hard feature extraction problems such as diagonal line detection and vertical line determination.

  12. Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.

    PubMed

    Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung

    2016-06-01

    Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Prediction of silicon-based layered structures for optoelectronic applications.

    PubMed

    Luo, Wei; Ma, Yanming; Gong, Xingao; Xiang, Hongjun

    2014-11-12

    A method based on the particle swarm optimization algorithm is presented to design quasi-two-dimensional materials. With this development, various single-layer and bilayer materials of C, Si, Ge, Sn, and Pb were predicted. A new Si bilayer structure is found to have a more favored energy than the previously widely accepted configuration. Both single-layer and bilayer Si materials have small band gaps, limiting their usages in optoelectronic applications. Hydrogenation has therefore been used to tune the electronic and optical properties of Si layers. We discover two hydrogenated materials of layered Si8H2 and Si6H2 possessing quasidirect band gaps of 0.75 and 1.59 eV, respectively. Their potential applications for light-emitting diode and photovoltaics are proposed and discussed. Our study opened up the possibility of hydrogenated Si layered materials as next-generation optoelectronic devices.

  14. D-π-A conjugated molecules for optoelectronic applications.

    PubMed

    Kim, Tae-Dong; Lee, Kwang-Sup

    2015-06-01

    Dipolar chromophores consisting of electron donor (D) and electron acceptor (A) groups connected through a conjugated π-bridge have been actively studied and integrated in optoelectronic and electronic devices. Generally, such π-conjugated molecules provide substantial delocalization of π-electrons over the molecules. Here, a brief overview of recent research on D-π-A dipolar chromophores including their syntheses and several promising applications is reported, especially in nonlinear optical devices and organic photovoltaics. Structure/property relationships are discussed in order to exploit the potentials by tuning the π-electron density, polarizability, and HOMO-LUMO band gap of the chromophores. Some of the examples may well set the stage for chip-scale integration of optoelectronics as well as the realization of an important array of new device technologies. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

    PubMed

    Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras; Coleman, Jonathan N; Strano, Michael S

    2012-11-01

    The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.

  16. Wide bandgap III-nitride nanomembranes for optoelectronic applications.

    PubMed

    Park, Sung Hyun; Yuan, Ge; Chen, Danti; Xiong, Kanglin; Song, Jie; Leung, Benjamin; Han, Jung

    2014-08-13

    Single crystalline nanomembranes (NMs) represent a new embodiment of semiconductors having a two-dimensional flexural character with comparable crystalline perfection and optoelectronic efficacy. In this Letter, we demonstrate the preparation of GaN NMs with a freestanding thickness between 90 to 300 nm. Large-area (>5 × 5 mm(2)) GaN NMs can be routinely obtained using a procedure of conductivity-selective electrochemical etching. GaN NM is atomically flat and possesses an optical quality similar to that from bulk GaN. A light-emitting optical heterostructure NM consisting of p-GaN/InGaN quantum wells/GaN is prepared by epitaxy, undercutting etching, and layer transfer. Bright blue light emission from this heterostructure validates the concept of NM-based optoelectronics and points to potentials in flexible applications and heterogeneous integration.

  17. Accurate manufacturing and production of optoelectronic parts and modules

    NASA Astrophysics Data System (ADS)

    Hannula, Tapio; Karioja, Pentti; Keraenen, Kimmo; Kopola, Harri K.; Malinen, Jouko; Ollila, Jyrki

    1998-12-01

    The trends in optoelectronic products are towards higher integration level of optics, electronics and mechanics. It means smaller dimensions and tighter packaging density. The precisions in component manufacturing and accuracies in module assemblings typically are in 10 to 50 micrometer range. Due to demands of the production in series of tens of thousands it means new type of know-how in production and assembling technologies.

  18. Diffusion of excitons in materials for optoelectronic device applications

    NASA Astrophysics Data System (ADS)

    Singh, Jai; Narayan, Monishka Rita; Ompong, David

    2015-06-01

    The diffusion of singlet excitonsis known to occur through the Förster resonance energy transfer (FRET) mechanism and that of singlet and triplet excitonscan occur through the Dexter carrier transfer mechanism. It is shown here that if a material possesses the strong exciton-spin-orbit-photon interaction then triplet excitonscan also be transported /diffused through a mechanism like FRET. The theory is applicable to the diffusion of excitonsin optoelectronic devices like organic solar cells, organic light emitting devices and inorganic scintillators.

  19. Applications of high-Tc superconductors in optoelectronics

    NASA Astrophysics Data System (ADS)

    Sobolewski, Roman

    1991-10-01

    The discovery of high-temperature superconductors (HTS) has opened new opportunities for applications of superconductors in optoelectronics. The HTS perovskites represent a new class of solid-state materials, exhibiting many very interesting and potentially useful electronic, optical, and electro-optical properties. They also operate in the 30-80 K temperature range, where refrigeration is cheap and the parameters of semiconducting devices are optimal. A review of the substrate materials and deposition techniques suitable for fabrication of high- quality epitaxial HTS films for electronic and optoelectronic applications is given. Laser processing techniques of HTS films are presented, with a special emphasis put on the laser writing method, which enable definition of superconducting and nonsuperconducting regions in the same epitaxial HTS film. Two possible approaches for the development of a complete optoelectronic system with the elements based on the HTS films and operational at liquid- nitrogen temperatures are presented. The first approach consists of manufacturing the devices made of conventional electro-optic materials and containing HTS transmission lines and electrodes. Design and properties of ultrafast HTS interconnects are discussed, and a new concept of the Mach-Zehnder-type YBa2Cu3O7-y-on-LiNbO3 optical modulator is introduced. The second, more futuristic approach, is to exploit contrasting properties of the oxygen-poor and oxygen-rich HTS phases to fabricate novel monolithic devices. Recent experiments are discussed which reveal intriguing optical properties of HTS films, and are most relevant for the development of all-HTS optoelectronics devices. Several practical devices, such as high-frequency modulators, ultrafast-pulse generators, and sensitive photodetectors are presented.

  20. Applications of high-Tc superconductors in optoelectronics

    NASA Astrophysics Data System (ADS)

    Sobolewski, Roman

    1991-10-01

    The discovery of high-temperature superconductors (HTS) has opened new opportunities for applications of superconductors in optoelectronics. The HTS perovskites represent a new class of solid-state materials exhibiting many very interesting and potentially useful electronic, optical, and electro-optical properties. They also operate in the 30-80 K temperature range, where refrigeration is cheap and the parameters of semiconducting devices are optimal. A review of the substrate materials and deposition techniques suitable for fabrication of high- quality epitaxial HTS films for electronic and optoelectronic applications is given. Laser processing techniques of HTS films are presented, with a special emphasis on the laser-writing method, which enables definition of superconducting and nonsuperconducting regions in the same epitaxial HTS film. Two possible approaches for the development of a complete optoelectronic system with the elements based on the HTS films and operational at liquid- nitrogen temperatures are presented. The first approach consists of manufacturing the devices made of conventional electro-optic materials and containing HTS transmission lines and electrodes. Design and properties of ultrafast HTS interconnects are discussed, and a new concept of the Mach-Zehnder-type YBa2Cu3O7-y-on-LiNbO3optical modulator is introduced. The second, more futuristic, approach is to exploit contrasting properties of the oxygen-poor and oxygen-rich HTS phases to fabricate novel, monolithic devices. Recent experiments are discussed which reveal intriguing optical properties of HTS films and are most relevant for the development of all-HTS optoelectronic devices. Several practical devices, such as high-frequency modulators, ultrafast-pulse generators, and sensitive photodetectors, are presented.

  1. Applications of high-Tc superconductors in optoelectronics

    NASA Astrophysics Data System (ADS)

    Sobolewski, Roman

    1991-09-01

    The discovery of high-temperature superconductors (HTS) has opened new opportunities for applications of superconductors in optoelectronics. The HTS perovskites represent a new class of solid-state materials, exhibiting many very interesting and potentially useful electronic, optical, and electro-optical properties. They also operate in the 30-80 K temperature range, where refrigeration is cheap and the parameters of semiconducting devices are optimal. A review of the substrate materials and deposition techniques suitable for fabrication of high- quality epitaxial HTS films for electronic and optoelectronic applications is given. Laser processing techniques of HTS films are presented, with a special emphasis put on the laser writing method, which enables definition of superconducting and nonsuperconducting regions in the same, epitaxial HTS film. Two possible approaches for the development of a complete optoelectronic system with the elements based on the HTS films and operational at liquid- nitrogen temperatures are presented. The first approach consists of manufacturing the devices made of conventional electro-optic materials and containing HTS transmission lines and electrodes. Design and properties of ultrafast HTS interconnects are discussed, and a new concept of the Mach-Zehnder-type YBa2Cu3O7-y-on-LiNbO3 optical modulator is introduced. The second, more futuristic approach, is to exploit contrasting properties of the oxygen-poor and oxygen-rich HTS phases to fabricate novel, monolithic devices. Recent experiments are discussed, which reveal intriguing optical properties of HTS films, and are most relevant for the development of all-HTS optoelectronic devices. Several practical devices, such as high-frequency modulators, ultrafast-pulse generators, and sensitive photodetectors will be presented.

  2. Applications of high-Tc superconductors in optoelectronics

    NASA Astrophysics Data System (ADS)

    Sobolewski, Roman

    1991-08-01

    The discovery of high-temperature superconductors (HTS) has opened new opportunities for applications of superconductors in optoelectronics. The HTS perovskites represent a new class of solid-state materials, exhibiting many very interesting and potentially electronic, optical, and electro-optical properties. They also operate int he 30 - 80 K temperature range, where refrigeration is cheap and the parameters of semiconducting devices are optimal. A review of the substrate materials and deposition techniques suitable for fabrication of high-quality epitaxial HTS films for electronic and optoelectronic applications is given. Laser processing techniques of HTS films are presented, with a special emphasis put on the laser writing method. Two possible approaches for the development of a complete optoelectronic system with the elements based on the HTS films and operational at liquid- nitrogen temperatures are presented. The first approach consists of manufacturing the devices made of conventional electro-optic materials and containing HTS transmission lines and electrodes. Design and properties of ultrafast HTS interconnects are discussed, and a new concept of the Mach- Zehnder-type YBa2Cu3O7-y-on LiNbO3 optical modulator is introduced. The second, more futuristic, approach, is to exploit contrasting properties of the oxygen-poor and oxygen-rich HTS phases to fabricate novel, monolithic devices. Recent experiments are discussed which reveal intriguing optical properties of HTS films, and are most relevant for the development of all-HTS optoelectronic devices. Several practical devices, such as high- frequency modulators, ultrafast-pulse generators, and sensitive photodetectors, are presented.

  3. Applications of high-Tc superconductors in optoelectronics

    NASA Astrophysics Data System (ADS)

    Sobolewski, Roman

    1991-09-01

    The discovery of high-temperature superconductors (HTS) has opened new opportunities for applications of superconductors in optoelectronics. The HTS perovskites represent a new class of solid-state materials, exhibiting many very interesting and potentially useful electronic, optical, and electro-optical properties. They also operate in the 30-80 K temperature range, where refrigeration is cheap and the parameters of semiconducting devices are optimal. A review of the substrate materials and deposition techniques suitable for fabrication of high- quality epitaxial HTS films for electronic and optoelectronic applications are given. Laser processing techniques of HTS films are presented, with a special emphasis put on the laser writing method. These techniques make it possible to define superconducting and nonsuperconducting regions in the same, epitaxial HTS film. Two possible approaches are presented for the development of a complete optoelectronic system with the elements based on the HTS films and operational at liquid-nitrogen temperatures. The first approach consists of manufacturing the devices made of conventional electro-optic materials and containing HTS transmission lines and electrodes. Design and properties of ultrafast HTS interconnects are discussed, and a new concept of the Mach-Zehnder-type YBa2Cu3O7-y- on-LiNbO3 optical modulator is introduced. The second, more futuristic approach, is to exploit contrasting properties of the oxygen-poor and oxygen-rich HTs phases to fabricate novel, monolithic devices. We discuss recent experiments, which reveal intriguing optical properties of HTS films, and are most relevant for the development of all-HTS optoelectronic devices. Several practical devices, such as high-frequency modulators, ultrafast-pulse generators, and sensitive photodetectors are presented.

  4. Applications of high-Tc superconductors in optoelectronics

    NASA Astrophysics Data System (ADS)

    Sobolewski, Roman

    1991-08-01

    The discovery of high-temperature superconductors (HTS) has opened new opportunities for applications of superconductors in optoelectronics. The HTS perovskites represent a new class of solid-state materials, exhibiting many very interesting and potentially useful electronic, optical, and electro- optical properties. They also operate in the 30-80 K temperature range, where refrigeration is cheap and the parameters of semiconducting devices are optical. A review of the substrate materials and deposition techniques suitable for fabrication of high-quality epitaxial HTS films for electronic and optoelectronic applications is given. Laser processing techniques of HTS films are presented, with a special emphasis put on the laser writing method, which enables the definition of superconducting and nonsuperconducting regions in the same, epitaxial HTS film. Two possible approaches for the development of a complete optoelectronic system with the elements based on the HTS films and operational at liquid-nitrogen temperatures are presented. The first approach consists of manufacturing the devices made of conventional electro- optic materials and containing HTS transmission lines and electrodes. Design and properties of ultrafast HTS interconnects are discussed, and a new concept of the Mach-Zehnder-type YBa2Cu3O7-y-on-LiNbO3 optical modulator is introduced. The second, more futuristic approach, is to exploit contrasting properties of the oxygen-poor and oxygen-rich HTS phases to fabricate novel, monolithic devices. Recent experiments, which reveal intriguing optical properties of HTS films, and are most relevant for the development of all-HTS optoelectronic devices are discussed. Several practical devices, such as high-frequency modulators, ultrafast-pulse generators, and sensitive photodetectors will be presented.

  5. Applications of high-Tc superconductors in optoelectronics

    NASA Astrophysics Data System (ADS)

    Sobolewski, Roman

    1991-08-01

    The discovery of high-temperature superconductors (HTS) has opened new opportunities for applications of superconductors in optoelectronics. The HTS perovskites represent a new class of solid-state materials, exhibiting many very interesting and potentially useful electronic, optical, and electro- optical properties. They also operate in the 30-80 K temperature range, where refrigeration is cheap and the parameters of semiconducting devices are optimal. A review of the substrate materials and deposition techniques suitable for fabrication of high-quality epitaxial HTS films for electronic and optoelectronic applications is given. Laser processing techniques of HTS films are presented, with a special emphasis put on the laser writing method, which enables the definition of superconducting and nonsuperconducting regions in the same, epitaxial HTS film. Two possible approaches for the development of a complete optoelectronic system with the elements based on the HTS films and operational at liquid-nitrogen temperatures are presented. The first approach consists of manufacturing the devices made of conventional electro- optic materials and containing HTS transmission lines and electrodes. Design and properties of ultrafast HTS interconnects are discussed, and a new concept of the Mach-Zehnder-type YBa2Cu3/$O(subscript 7-y-on-LiNbO3 optical modulator is introduced. The second, more futuristic approach, is to exploit contrasting properties of the oxygen-poor and oxygen-rich HTS phases to fabricate novel, monolithic devices. Recent experiments, which reveal intriguing optical properties of HTS films, and are most relevant for the development of all-HTS optoelectronic devices are discussed. Several practical devices, such as high-frequency modulators, ultrafast-pulse generators, and sensitive photodetectors will be presented.

  6. High-Resolution Optoelectronic Shaft-Angle Encoder

    NASA Technical Reports Server (NTRS)

    Leviton, Douglas B.

    1994-01-01

    Improved optoelectronic encoder measures absolute angle to which shaft has been rotated. Costs little more than older, less capable encoders do, yet measures absolute angles at high resolution and does not lose absolute-angle data because generates those data anew with each reading at up to 1,000 times per second. It accumulates increments to measure total angular interval through which shaft has been turned (including unlimited number of complete turns), as long as power remains on.

  7. Phased-Array Antenna With Optoelectronic Control Circuits

    NASA Technical Reports Server (NTRS)

    Kunath, Richard R.; Shalkhauser, Kurt A.; Martzaklis, Konstantinos; Lee, Richard Q.; Downey, Alan N.; Simons, Rainee N.

    1995-01-01

    Prototype phased-array antenna features control of amplitude and phase at each radiating element. Amplitude- and phase-control signals transmitted on optical fiber to optoelectronic interface circuit (OEIC), then to monolithic microwave integrated circuit (MMIC) at each element. Offers advantages of flexible, rapid electronic steering and shaping of beams. Furthermore, greater number of elements, less overall performance of antenna degraded by malfunction in single element.

  8. Lipid Bilayer-Integrated Optoelectronic Tweezers for Nanoparticle Manipulations

    DTIC Science & Technology

    2013-01-01

    Lipid Bilayer -Integrated Optoelectronic Tweezers for Nanoparticle Manipulations Sadao Ota,† Sheng Wang,† Yuan Wang,† Xiaobo Yin,† and Xiang Zhang...undesired ionic convections, or irreversible particle immobilization on surfaces. We report here the first demonstration of a lipid bilayer ... bilayer membrane with a ∼5 nm thickness supported by a photoconductive electrode to confine the diffusion of chemically tethered nanoparticles in a

  9. Workshop on MQW Mixing and its Application to Optoelectronic Devices

    DTIC Science & Technology

    1990-09-01

    presented and the initial results of diffusion induced intermixing of quantum wells will be presented together with a projection on the integration of...tartial Intermixing of Strained InGaAs/GaAs Quantum Wells " P Melman E S Koteles, B Ehnan and C A Armiento GTE Laboratories Inc, Waltham, MA, USA 09.35...technique to intermix quantum - well and barrier materials. Intermixing by implantation of non-dopant ions is of interest for optoelectronics devices

  10. Two distinct bifurcation routes for delayed optoelectronic oscillators

    NASA Astrophysics Data System (ADS)

    Weicker, Lionel; Friart, Gaetan; Erneux, Thomas

    2017-09-01

    We investigate the coexistence of low- and high-frequency oscillations in a delayed optoelectronic oscillator. We identify two nearby Hopf bifurcation points exhibiting low and high frequencies and demonstrate analytically how they lead to stable solutions. We then show numerically that these two branches of solutions undergo higher order instabilities as the feedback rate is increased but remain separated in the bifurcation diagram. The two bifurcation routes can be followed independently by either progressively increasing or decreasing the bifurcation parameter.

  11. Highly parallel consistent labeling algorithm suitable for optoelectronic implementation.

    PubMed

    Marsden, G C; Kiamilev, F; Esener, S; Lee, S H

    1991-01-10

    Constraint satisfaction problems require a search through a large set of possibilities. Consistent labeling is a method by which search spaces can be drastically reduced. We present a highly parallel consistent labeling algorithm, which achieves strong k-consistency for any value k and which can include higher-order constraints. The algorithm uses vector outer product, matrix summation, and matrix intersection operations. These operations require local computation with global communication and, therefore, are well suited to a optoelectronic implementation.

  12. Opto-Electronic Oscillator Using Suppressed Phase Modulation

    NASA Technical Reports Server (NTRS)

    Dick, G. John; Yu, Nan

    2007-01-01

    A proposed opto-electronic oscillator (OEO) would generate a microwave signal having degrees of frequency stability and spectral purity greater than those achieved in prior OEOs. The design of this system provides for reduction of noise levels (including the level of phase noise in the final output microwave signal) to below some of the fundamental limits of the prior OEOs while retaining the advantages of photonic generation of microwaves.

  13. Low -Dimensional Halide Perovskites and Their Advanced Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Zhang, Jian; Yang, Xiaokun; Deng, Hui; Qiao, Keke; Farooq, Umar; Ishaq, Muhammad; Yi, Fei; Liu, Huan; Tang, Jiang; Song, Haisheng

    2017-07-01

    Metal halide perovskites are crystalline materials originally developed out of scientific curiosity. They have shown great potential as active materials in optoelectronic applications. In the last 6 years, their certified photovoltaic efficiencies have reached 22.1%. Compared to bulk halide perovskites, low-dimensional ones exhibited novel physical properties. The photoluminescence quantum yields of perovskite quantum dots are close to 100%. The external quantum efficiencies and current efficiencies of perovskite quantum dot light-emitting diodes have reached 8% and 43 cd A-1, respectively, and their nanowire lasers show ultralow-threshold room-temperature lasing with emission tunability and ease of synthesis. Perovskite nanowire photodetectors reached a responsivity of 10 A W-1 and a specific normalized detectivity of the order of 1012 Jones. Different from most reported reviews focusing on photovoltaic applications, we summarize the rapid progress in the study of low-dimensional perovskite materials, as well as their promising applications in optoelectronic devices. In particular, we review the wide tunability of fabrication methods and the state-of-the-art research outputs of low-dimensional perovskite optoelectronic devices. Finally, the anticipated challenges and potential for this exciting research are proposed.

  14. Patterning of conjugated polymers for organic optoelectronic devices.

    PubMed

    Xu, Youyong; Zhang, Fan; Feng, Xinliang

    2011-05-23

    Conjugated polymers have been attracting more and more attention because they possess various novel electrical, magnetical, and optical properties, which render them useful in modern organic optoelectronic devices. Due to their organic nature, conjugated polymers are light-weight and can be fabricated into flexible appliances. Significant research efforts have been devoted to developing new organic materials to make them competitive with their conventional inorganic counterparts. It is foreseeable that when large-scale industrial manufacture of the devices made from organic conjugated polymers is feasible, they would be much cheaper and have more functions. On one hand, in order to improve the performance of organic optoelectronic devices, it is essential to tune their surface morphologies by techniques such as patterning. On the other hand, patterning is the routine requirement for device processing. In this review, the recent progress in the patterning of conjugated polymers for high-performance optoelectronic devices is summarized. Patterning based on the bottom-up and top-down methods are introduced. Emerging new patterning strategies and future trends for conventional patterning techniques are discussed.

  15. Optoelectronics-related competence building in Japanese and Western firms

    NASA Astrophysics Data System (ADS)

    Miyazaki, Kumiko

    1992-05-01

    In this paper, an analysis is made of how different firms in Japan and the West have developed competence related to optoelectronics on the basis of their previous experience and corporate strategies. The sample consists of a set of seven Japanese and four Western firms in the industrial, consumer electronics and materials sectors. Optoelectronics is divided into subfields including optical communications systems, optical fibers, optoelectronic key components, liquid crystal displays, optical disks, and others. The relative strengths and weaknesses of companies in the various subfields are determined using the INSPEC database, from 1976 to 1989. Parallel data are analyzed using OTAF U.S. patent statistics and the two sets of data are compared. The statistical analysis from the database is summarized for firms in each subfield in the form of an intra-firm technology index (IFTI), a new technique introduced to assess the revealed technology advantage of firms. The quantitative evaluation is complemented by results from intensive interviews with the management and scientists of the firms involved. The findings show that there is a marked variation in the way firms' technological trajectories have evolved giving rise to strength in some and weakness in other subfields for the different companies, which are related to their accumulated core competencies, previous core business activities, organizational, marketing, and competitive factors.

  16. Optoelectronic properties of valence-state-controlled amorphous niobium oxide

    NASA Astrophysics Data System (ADS)

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-01

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

  17. Transparent electrodes for organic optoelectronic devices: a review

    NASA Astrophysics Data System (ADS)

    Cao, Weiran; Li, Jian; Chen, Hongzheng; Xue, Jiangeng

    2014-01-01

    Transparent conductive electrodes are one of the essential components for organic optoelectronic devices, including photovoltaic cells and light-emitting diodes. Indium-tin oxide (ITO) is the most common transparent electrode in these devices due to its excellent optical and electrical properties. However, the manufacturing of ITO film requires precious raw materials and expensive processes, which limits their compatibility with mass production of large-area, low-cost devices. The optical/electrical properties of ITO are strongly dependent on the deposition processes and treatment conditions, whereas its brittleness and the potential damage to underlying films during deposition also present challenges for its use in flexible devices. Recently, several other transparent conductive materials, which have various degrees of success relative to commercial applications have been developed to address these issues. Starting from the basic properties of ITO and the effect of various ITO surface modification methods, here we review four different groups of materials, doped metal oxides, thin metals, conducting polymers, and nanomaterials (including carbon nanotubes, graphene, and metal nanowires), that have been reported as transparent electrodes in organic optoelectronic materials. Particular emphasis is given to their optical/electrical and other material properties, deposition techniques, and applications in organic optoelectronic devices.

  18. Epitaxial growth of three-dimensionally architectured optoelectronic devices.

    PubMed

    Nelson, Erik C; Dias, Neville L; Bassett, Kevin P; Dunham, Simon N; Verma, Varun; Miyake, Masao; Wiltzius, Pierre; Rogers, John A; Coleman, James J; Li, Xiuling; Braun, Paul V

    2011-07-24

    Optoelectronic devices have long benefited from structuring in multiple dimensions on microscopic length scales. However, preserving crystal epitaxy, a general necessity for good optoelectronic properties, while imparting a complex three-dimensional structure remains a significant challenge. Three-dimensional (3D) photonic crystals are one class of materials where epitaxy of 3D structures would enable new functionalities. Many 3D photonic crystal devices have been proposed, including zero-threshold lasers, low-loss waveguides, high-efficiency light-emitting diodes (LEDs) and solar cells, but have generally not been realized because of material limitations. Exciting concepts in metamaterials, including negative refraction and cloaking, could be made practical using 3D structures that incorporate electrically pumped gain elements to balance the inherent optical loss of such devices. Here we demonstrate the 3D-template-directed epitaxy of group III-V materials, which enables formation of 3D structured optoelectronic devices. We illustrate the power of this technique by fabricating an electrically driven 3D photonic crystal LED.

  19. Advances in graphene-based optoelectronics, plasmonics and photonics

    NASA Astrophysics Data System (ADS)

    Nguyen, Bich Ha; Hieu Nguyen, Van

    2016-03-01

    Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented.

  20. Web-Enabled Optoelectronic Particle-Fallout Monitor

    NASA Technical Reports Server (NTRS)

    Lineberger, Lewis P.

    2008-01-01

    A Web-enabled optoelectronic particle- fallout monitor has been developed as a prototype of future such instruments that (l) would be installed in multiple locations for which assurance of cleanliness is required and (2) could be interrogated and controlled in nearly real time by multiple remote users. Like prior particle-fallout monitors, this instrument provides a measure of particles that accumulate on a surface as an indication of the quantity of airborne particulate contaminants. The design of this instrument reflects requirements to: Reduce the cost and complexity of its optoelectronic sensory subsystem relative to those of prior optoelectronic particle fallout monitors while maintaining or improving capabilities; Use existing network and office computers for distributed display and control; Derive electric power for the instrument from a computer network, a wall outlet, or a battery; Provide for Web-based retrieval and analysis of measurement data and of a file containing such ancillary data as a log of command attempts at remote units; and Use the User Datagram Protocol (UDP) for maximum performance and minimal network overhead.

  1. Method And Apparatus For Coupling Optical Elements To Optoelectronic Devices For Manufacturing Optical Transceiver Modules

    DOEpatents

    Anderson, Gene R.; Armendariz, Marcelino G.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; Giunta, Rachel Knudsen; Mitchell, Robert T.; McCormick, Frederick B.; Peterson, David W.; Rising, Merideth A.; Reber, Cathleen A.; Reysen, Bill H.

    2005-06-14

    A process is provided for aligning and connecting at least one optical fiber to at least one optoelectronic device so as to couple light between at least one optical fiber and at least one optoelectronic device. One embodiment of this process comprises the following steps: (1) holding at least one optical element close to at least one optoelectronic device, at least one optical element having at least a first end; (2) aligning at least one optical element with at least one optoelectronic device; (3) depositing a first non-opaque material on a first end of at least one optoelectronic device; and (4) bringing the first end of at least one optical element proximate to the first end of at least one optoelectronic device in such a manner that the first non-opaque material contacts the first end of at least one optoelectronic device and the first end of at least one optical element. The optical element may be an optical fiber, and the optoelectronic device may be a vertical cavity surface emitting laser. The first non-opaque material may be a UV optical adhesive that provides an optical path and mechanical stability. In another embodiment of the alignment process, the first end of at least one optical element is brought proximate to the first end of at least one optoelectronic device in such a manner that an interstitial space exists between the first end of at least one optoelectronic device and the first end of at least one optical element.

  2. Quantum Dot Superlattice Enabled Rational Design in Optoelectronics and Hydrogen Generation

    DTIC Science & Technology

    2014-11-25

    in Optoelectronics and Hydrogen Generation 5a. CONTRACT NUMBER FA2386-13-1-4074 5b. GRANT NUMBER Grant AOARD-134074 5c. PROGRAM ELEMENT...FA2386-13-1-4074 “Quantum Dot Superlattice Enabled Rational Design in Optoelectronics and Hydrogen Generation” April 21, 2014 PI and Co-PI...impacts on optoelectronic devices, and hydrogen generation under sunlight. Introduction: Intensive research works have been made on inorganic

  3. Single-sided lateral-field and phototransistor-based optoelectronic tweezers

    NASA Technical Reports Server (NTRS)

    Ohta, Aaron (Inventor); Chiou, Pei-Yu (Inventor); Hsu, Hsan-Yin (Inventor); Jamshidi, Arash (Inventor); Wu, Ming-Chiang (Inventor); Neale, Steven L. (Inventor)

    2011-01-01

    Described herein are single-sided lateral-field optoelectronic tweezers (LOET) devices which use photosensitive electrode arrays to create optically-induced dielectrophoretic forces in an electric field that is parallel to the plane of the device. In addition, phototransistor-based optoelectronic tweezers (PhOET) devices are described that allow for optoelectronic tweezers (OET) operation in high-conductivity physiological buffer and cell culture media.

  4. Advanced educational program in optoelectronics for undergraduates and graduates in electronics

    NASA Astrophysics Data System (ADS)

    Vladescu, Marian; Schiopu, Paul

    2015-02-01

    The optoelectronics education included in electronics curricula at Faculty of Electronics, Telecommunications and Information Technology of "Politehnica" University of Bucharest started in early '90s, and evolved constantly since then, trying to address the growing demand of engineers with a complex optoelectronics profile and to meet the increased requirements of microelectronics, optoelectronics, and lately nanotechnologies. Our goal is to provide a high level of theoretical background combined with advanced experimental tools in laboratories, and also with simulation platforms. That's why we propose an advanced educational program in optoelectronics for both grades of our study program, bachelor and master.

  5. Dynamic manipulation and patterning of microparticles and cells by using TiOPc-based optoelectronic dielectrophoresis.

    PubMed

    Yang, Shih-Mo; Yu, Tung-Ming; Huang, Hang-Ping; Ku, Meng-Yen; Hsu, Long; Liu, Cheng-Hsien

    2010-06-15

    We develop light-driven optoelectronic tweezers based on the organic photoconductive material titanium oxide phthalocyanine. These tweezers function based on negative dielectrophoresis (nDEP). The dynamic manipulation of a single microparticle and cell patterning are demonstrated by using this light-driven optoelectronic DEP chip. The adaptive light patterns that drive the optoelectronic DEP onchip are designed by using Flash software to approach appropriate dynamic manipulation. This is also the first reported demonstration, to the best of our knowledge, for successfully patterning such delicate cells from human hepatocellular liver carcinoma cell line HepG2 by using any optoelectronic tweezers.

  6. Optoelectronic sensor device for monitoring ethanol concentration in winemaking applications

    NASA Astrophysics Data System (ADS)

    Jiménez-Márquez, F.; Vázquez, J.; Úbeda, J.; Rodríguez-Rey, J.; Sánchez-Rojas, J. L.

    2015-05-01

    The supervision of key variables such as sugar, alcohol, released CO2 and microbiological evolution in fermenting grape must is of great importance in the winemaking industry. However, the fermentation kinetics is assessed by monitoring the evolution of the density as it varies during a fermentation, since density is an indicator of the total amount of sugars, ethanol and glycerol. Even so, supervising the fermentation process is an awkward and non-comprehensive task, especially in wine cellars where production rates are massive, and enologists usually measure the density of the extracted samples from each fermentation tank manually twice a day. This work aims at the design of a fast, low-cost, portable and reliable optoelectronic sensor for measuring ethanol concentration in fermenting grape must samples. Different sets of model solutions, which contain ethanol, fructose, glucose, glycerol dissolved in water and emulate the grape must composition at different stages of the fermentation, were prepared both for calibration and validation. The absorption characteristics of these model solutions were analyzed by a commercial spectrophotometer in the NIR region, in order to identify key wavelengths from which valuable information regarding the sample composition can be extracted. Finally, a customized optoelectronic prototype based on absorbance measurements at two wavelengths belonging to the NIR region was designed, fabricated and successfully tested. The system, whose optoelectronics is reduced after a thorough analysis to only two LED lamps and their corresponding paired photodiodes operating at 1.2 and 1.3 μm respectively, calculates the ethanol content by a multiple linear regression.

  7. Graduate studies on optoelectronics in Argentina: an experience

    NASA Astrophysics Data System (ADS)

    Fernández, Juan C.; Garea, María. T.; Isaurralde, Silvia; Perez, Liliana I.; Raffo, Carlos A.

    2014-07-01

    The number of graduate programs in Optoelectronics in Argentina is scarce. The current Optics and Photonics Education Directory lists only three programs. One of them was launched in 2001 in the Facultad de Ingeniería (College of Engineering), Universidad de Buenos Aires (UBA). This was the first graduate program in the field, leading to a Master Degree in Optoelectronics. This decision arose from the demand of telecommunications industries and several estate- or private-funded research institutions working with us in the fields of lasers, optics, remote sensing, etc. A great bonus was the steady work, during several decades, of research groups in the College on the development of different type of lasers and optical non destructive tests and their engineering applications. As happened in many engineering graduate programs in Argentina at that time, few non full-time students could finish their studies, which called for 800 hours of traditional lecture-recitation classes, and the Master Thesis. In recent years Argentine Education authorities downsized the Master programs to 700 hours of blended learning and we redesigned the Graduate Optoelectronic Engineering Program to meet the challenge, dividing it in two successive one year programs, the first aimed at a professional training for almost immediate insertion in the labor market (called Especialización en Ingeniería Optoelectrónica), and the second (called Maestría en Ingeniería Optoelectrónica y Fotónica) aimed at a more academic and research target to comply with the UBA standards for Master degrees. The present work is a presentation of the new program design, which has begun in the current year.

  8. Conjugated polymers and their use in optoelectronic devices

    SciTech Connect

    Marks, Tobin J.; Guo, Xugang; Zhou, Nanjia; Chang, Robert P. H.; Drees, Martin; Facchetti, Antonio

    2016-10-18

    The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.

  9. Quantum dot rolled-up microtube optoelectronic integrated circuit.

    PubMed

    Bhowmick, Sishir; Frost, Thomas; Bhattacharya, Pallab

    2013-05-15

    A rolled-up microtube optoelectronic integrated circuit operating as a phototransceiver is demonstrated. The microtube is made of a InGaAs/GaAs strained bilayer with InAs self-organized quantum dots inserted in the GaAs layer. The phototransceiver consists of an optically pumped microtube laser and a microtube photoconductive detector connected by an a-Si/SiO2 waveguide. The loss in the waveguide and responsivity of the entire phototransceiver circuit are 7.96 dB/cm and 34 mA/W, respectively.

  10. Electrical and optoelectronic properties of two-dimensional materials

    NASA Astrophysics Data System (ADS)

    Wang, Qiaoming

    Electrical and optoelectronic properties of bulk semiconductor materials have been extensively explored in last century. However, when reduced to one-dimensional and two-dimensional, many semiconductors start to show unique electrical and optoelectronic behaviors. In this dissertation, electrical and optoelectronic properties of one-dimensional (nanowires) and two-dimensional semiconductor materials are investigated by various techniques, including scanning photocurrent microscopy, scanning Kelvin probe microscopy, Raman spectroscopy, photoluminescence, and finite-element simulations. In our work, gate-tunable photocurrent in ZnO nanowires has been observed under optical excitation in the visible regime, which originates from the nanowire/substrate interface states. This gate tunability in the visible regime can be used to enhance the photon absorption efficiency, and suppress the undesirable visible-light photodetection in ZnO-based solar cells. The power conversion efficiency of CuInSe2/CdS core-shell nanowire solar cells has been investigated. The highest power conversion efficiency per unit area/volume is achieved with core diameter of 50 nm and the thinnest shell thickness. The existence of the optimal geometrical parameters is due to a combined effect of optical resonances and carrier transport/dynamics. Significant current crowding in two-dimensional black phosphorus field-effect transistors has been found, which has been significantly underestimated by the commonly used transmission-line model. This current crowding can lead to Joule heating close to the contacts. New van der Waals metal-semiconductor junctions have been mechanically constructed and systematically studied. The photocurrent on junction area has been demonstrated to originate from the photothermal effect rather than the photovoltaic effect. Our findings suggest that a reasonable control of interface/surface state properties can enable new and beneficial functionalities in nanostructures. We

  11. Antenna-enhanced optoelectronic probing of carbon nanotubes.

    PubMed

    Mauser, Nina; Hartmann, Nicolai; Hofmann, Matthias S; Janik, Julia; Högele, Alexander; Hartschuh, Achim

    2014-07-09

    We report on the first antenna-enhanced optoelectronic microscopy studies on nanoscale devices. By coupling the emission and excitation to a scanning optical antenna, we are able to locally enhance the electroluminescence and photocurrent along a carbon nanotube device. We show that the emission source of the electroluminescence can be pointlike with a spatial extension below 20 nm. Topographic and antenna-enhanced photocurrent measurements reveal that the emission takes place at the location of highest local electric field indicating that the mechanism behind the emission is the radiative decay of excitons created via impact excitation.

  12. WDM module research within the Canadian Solid State Optoelectronics Consortium

    NASA Astrophysics Data System (ADS)

    Fallahi, Mahmoud; Koteles, Emil S.; Delage, Andre; Chatenoud, F.; Templeton, Ian M.; Champion, Garth; He, Jian Jun; Wang, Weijian; Dion, Michael M.; Barber, Richard A.

    1995-02-01

    We report on the design, growth, fabrication, and characterization of monolithic wavelength division multiplexed (WDM) modules produced within the Canadian Solid State Optoelectronics Consortium. The transmitter module includes multiple, discrete wavelength, distributed Bragg reflector (DBR) laser diodes monolithically integrated with waveguide combiners fabricated using an InGaAs/GaAs heterostructure. The wavelength demultiplexer unit is based on a Rowland circle grating spectrometer monolithically integrated with a metal- semiconductor-metal (MSM) detector array fabricated on an InGaAs/AlGaAs/GaAs heterostructure. The epitaxial layer wafers for both transmitter and receiver modules were grown in single molecular beam epitaxy (MBE) runs.

  13. Optoelectronic set for measuring reflectance spectrum of living human skin

    NASA Astrophysics Data System (ADS)

    Gryko, Lukasz; Zajac, Andrzej; Gilewski, Marian; Kulesza, Ewa

    2015-09-01

    In the paper the authors present the developed optoelectronic set for measuring spectral reflectance of living human skin. The basic elements of the set are: the illuminator consists of the LED illuminator emitting a uniform distribution of spectral irradiance in the exposed field, the semispherical measuring chamber and the spectrometer which measures spectrum of reflected radiation. Measured radiation is from spectral range of tissue optical window (from 600 nm to 1000 nm). Knowledge about the reflectance spectrum of the patient skin allows adjusting spectral and energetic parameters of the radiation used in biostimulation treatment. The developed set also enables the repeatable exposures of patients in the Low Level Laser Therapy procedures.

  14. Optoelectronic III-V Heterostructures on SI Substrates

    DTIC Science & Technology

    1990-09-14

    V optoelectronic devices operating at wavelengths (i.e., A > 1.2 microns) requiring a transparent substrate or monolithic waveguides. In addition to... integration of InP and related compounds with Si previously.’ The buffer layer was then capped with an un- would allow the combining of optical sources...modulators, doped InP active layer of 4/pm thickness grown at 480 C and detectors operating at 1.3 and 1.55 /m with Si integrated and 1 um/h. Reflection

  15. Acousto-optic collinear filter with optoelectronic feedback

    NASA Astrophysics Data System (ADS)

    Mantsevich, S. N.; Balakshy, V. I.; Kuznetsov, Yu. I.

    2017-04-01

    A spectral optoelectronic system combining a collinear acousto-optic cell fabricated of calcium molybdate single crystal and a positive electronic feedback is proposed first and examined theoretically and experimentally. The feedback signal is formed at the cell output due to the optical heterodyning effect with the use of an unconventional regime of cell operation. It is shown that the feedback enables controlling spectral characteristics of the acousto-optic cell, resulting in enhancing the spectral resolution and the accuracy of optical wavelength determination. In the experiment, maximal filter passband narrowing was as great as 37 times.

  16. Multiple fluorescence microscopy and optoelectronic imaging: possibilities and limits

    NASA Astrophysics Data System (ADS)

    Gundlach, Heinz

    1997-12-01

    The last 20 years have seen an unexpected great renaissance and a partial revolution in light microscopy. This recent progress is due to new design in optics and instrumentation as well as improvement of optical contrast enhancement techniques. Recent progress in fluorescence microscopy is achieved by multiparameter fluorescence techniques, by improvement of conventional photomicrography as well as by optoelectronic imaging, confocal laser scanning microscopy, image processing and analysis. Due to the increase in number of fluorescence dyes, double and triple bandpass filter sets permit a rapid changeover between different fluorochromes simultaneously.

  17. Cooperative Lamb shift and superradiance in an optoelectronic device

    NASA Astrophysics Data System (ADS)

    Frucci, G.; Huppert, S.; Vasanelli, A.; Dailly, B.; Todorov, Y.; Beaudoin, G.; Sagnes, I.; Sirtori, C.

    2017-04-01

    When a single excitation is shared between a large number of two-level systems, a strong enhancement of the spontaneous emission appears. This phenomenon is known as superradiance. This enhanced rate can be accompanied by a shift of the emission frequency, the cooperative Lamb shift, issued from the exchange of virtual photons between the emitters. In this work we present a semiconductor optoelectronic device allowing the observation of these two phenomena at room temperature. We demonstrate experimentally and theoretically that plasma oscillations in spatially separated quantum wells interact through real and virtual photon exchange. This gives rise to a superradiant mode displaying a large cooperative Lamb shift.

  18. Electronic and optoelectronic nano-devices based on carbon nanotubes.

    PubMed

    Scarselli, M; Castrucci, P; De Crescenzi, M

    2012-08-08

    The discovery and understanding of nanoscale phenomena and the assembly of nanostructures into different devices are among the most promising fields of material science research. In this scenario, carbon nanostructures have a special role since, in having only one chemical element, they allow physical properties to be calculated with high precision for comparison with experiment. Carbon nanostructures, and carbon nanotubes (CNTs) in particular, have such remarkable electronic and structural properties that they are used as active building blocks for a large variety of nanoscale devices. We review here the latest advances in research involving carbon nanotubes as active components in electronic and optoelectronic nano-devices. Opportunities for future research are also identified.

  19. All-optoelectronic continuous wave THz imaging for biomedical applications.

    PubMed

    Siebert, Karsten J; Löffler, Torsten; Quast, Holger; Thomson, Mark; Bauer, Tobias; Leonhardt, Rainer; Czasch, Stephanie; Roskos, Hartmut G

    2002-11-07

    We present an all-optoelectronic THz imaging system for ex vivo biomedical applications based on photomixing of two continuous-wave laser beams using photoconductive antennas. The application of hyperboloidal lenses is discussed. They allow for f-numbers less than 1/2 permitting better focusing and higher spatial resolution compared to off-axis paraboloidal mirrors whose f-numbers for practical reasons must be larger than 1/2. For a specific histological sample, an analysis of image noise is discussed.

  20. All-optoelectronic continuous-wave terahertz systems.

    PubMed

    Löffler, Torsten; Siebert, Karsten J; Quast, Holger; Hasegawa, Noburu; Loata, Gabriel; Wipf, Robert; Hahn, Tobias; Thomson, Mark; Leonhardt, Rainer; Roskos, Hartmut G

    2004-02-15

    We discuss the optoelectronic generation and detection of continuous-wave terahertz (THz) radiation by the mixing of visible/near-infrared laser radiation in photoconductive antennas. We review attempts to reach higher THz output-power levels by reverting from mobility-lifetime-limited photomixers to transit-time-limited p-i-n photodiodes. We then describe our implementation of a THz spectroscopy and imaging-measurement system and demonstrate its imaging performance with several examples. Possible application areas of THz imaging in the biomedical field and in surface characterization for industrial purposes are explored.

  1. Neuromorphic opto-electronic integrated circuits for optical signal processing

    NASA Astrophysics Data System (ADS)

    Romeira, B.; Javaloyes, J.; Balle, S.; Piro, O.; Avó, R.; Figueiredo, J. M. L.

    2014-08-01

    The ability to produce narrow optical pulses has been extensively investigated in laser systems with promising applications in photonics such as clock recovery, pulse reshaping, and recently in photonics artificial neural networks using spiking signal processing. Here, we investigate a neuromorphic opto-electronic integrated circuit (NOEIC) comprising a semiconductor laser driven by a resonant tunneling diode (RTD) photo-detector operating at telecommunication (1550 nm) wavelengths capable of excitable spiking signal generation in response to optical and electrical control signals. The RTD-NOEIC mimics biologically inspired neuronal phenomena and possesses high-speed response and potential for monolithic integration for optical signal processing applications.

  2. Optoelectronic Workshops (14th). Ferroelectric Liquid Crystal IR chopper.

    DTIC Science & Technology

    1989-02-21

    James E. Miller B. Center for Opto-Electronic Systems Research Organizer -- Stephen Jacobs IR Shutter-Chopper Employing Ferroelectric Liquid Crystals...Marshall and S. D. Jacobs 3I 1. INTRODUCTION This workshop is a follow-up to Workshop IV: Liquid Crystals for Laser Applications, which was held at...703-664-1585 Edward J. Sharp L-LRT 703-664-5767 University of Rochester Stephen D. Jacobs * LLE 716-275-5105 Ronald Antos Optics 716-275-4179 Nicholas

  3. Nonplanar push-pull chromophores for opto-electronic applications.

    PubMed

    Breiten, Benjamin; Biaggio, Ivan; Diederich, François

    2010-01-01

    Donor-substituted cyanoethynylethenes (CEEs) are planar push-pull chromophores featuring intense intramolecular charge-transfer (CT) interactions and high third-order optical nonlinearities. Their thermal stability allows for the formation of crystalline thin films by vapor-phase deposition. On the other hand, high-quality amorphous thin films are preferred for opto-electronic applications and such films can be prepared using nonplanar push-pull chromophores with a less pronounced propensity to crystallize. By taking advantage of a versatile, atom-economic 'click-chemistry'-type transformation, involving a formal [2 + 2] cycloaddition of tetracyanoethene (TCNE) to electron-rich alkynes, followed by cycloreversion, stable donor-substituted 1,1,4,4-tetracyanobuta-1,3-dienes (TCBDs) are obtained in high yield and large quantities. These nonplanar push-pull chromophores also feature intense intramolecular CT and, in many cases, high third-order optical nonlinearities. Some of these compounds form high-optical-quality amorphous thin films by vapor-phase deposition, and first applications in next-generation opto-electronic devices have already been demonstrated. Chiral derivatives display high helical twisting power and are efficient dopants to translate molecular into macroscopic chirality, by switching nematic into cholesteric liquid crystalline phases.

  4. Photonics and optoelectronics of two-dimensional materials beyond graphene.

    PubMed

    Ponraj, Joice Sophia; Xu, Zai-Quan; Dhanabalan, Sathish Chander; Mu, Haoran; Wang, Yusheng; Yuan, Jian; Li, Pengfei; Thakur, Siddharatha; Ashrafi, Mursal; Mccoubrey, Kenneth; Zhang, Yupeng; Li, Shaojuan; Zhang, Han; Bao, Qiaoliang

    2016-11-18

    Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.

  5. Optoelectronic implementation of diffusion neural network for contour detection

    NASA Astrophysics Data System (ADS)

    Kim, Jae-Chang; Cho, Cheol S.; Nam, Ki G.; Yoon, Tae-Hoon; Liu, Hua-Kuang

    1994-08-01

    In this paper we investigate a feasibility of an opto-electronic implementation of the diffusion neural network for contour detection. The diffusion neural network performs the Gaussian operation efficiently by the diffusion process. We apply this in producing the DOG (Difference of two Gaussian) functions, which can detect the intensity changes of the different spatial frequency components in an image. In the diffusion neural network each neuron has four connections with the four nearest neighbor neurons and a self-decay loop for a 2D image, and the connection weights are fixed-valued. Therefore the diffusion neural network is simpler and more efficient than LOG masking method in hardware or optical implementation. We implement the diffusion neural network opto-electronically using the point spread function of a spatial light modulator. This system is composed of a spatial light modulator, a 2D image sensor array, and a computer. The processing time of the system is very fast. Therefore the system has a potential applicability to the system that requires a real time processing of an image.

  6. Optoelectronic polarimeter controlled by a graphical user interface of Matlab

    NASA Astrophysics Data System (ADS)

    Vilardy, J. M.; Jimenez, C. J.; Torres, R.

    2017-01-01

    We show the design and implementation of an optical polarimeter using electronic control. The polarimeter has a software with a graphical user interface (GUI) that controls the optoelectronic setup and captures the optical intensity measurement, and finally, this software evaluates the Stokes vector of a state of polarization (SOP) by means of the synchronous detection of optical waves. The proposed optoelectronic polarimeter can determine the Stokes vector of a SOP in a rapid and efficient way. Using the polarimeter proposed in this paper, the students will be able to observe (in an optical bench) and understand the different interactions of the SOP when the optical waves pass through to the linear polarizers and retarder waves plates. The polarimeter prototype could be used as a main tool for the students in order to learn the theory and experimental aspects of the SOP for optical waves via the Stokes vector measurement. The proposed polarimeter controlled by a GUI of Matlab is more attractive and suitable to teach and to learn the polarization of optical waves.

  7. Photonics and optoelectronics of two-dimensional materials beyond graphene

    NASA Astrophysics Data System (ADS)

    Ponraj, Joice Sophia; Xu, Zai-Quan; Chander Dhanabalan, Sathish; Mu, Haoran; Wang, Yusheng; Yuan, Jian; Li, Pengfei; Thakur, Siddharatha; Ashrafi, Mursal; Mccoubrey, Kenneth; Zhang, Yupeng; Li, Shaojuan; Zhang, Han; Bao, Qiaoliang

    2016-11-01

    Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.

  8. Optoelectronic leak detection system for monitoring subsea structures

    NASA Astrophysics Data System (ADS)

    Moodie, D.,; Costello, L.; McStay, D.

    2010-04-01

    Leak detection and monitoring on subsea structures is an area of increasing interest for the detection and monitoring of production and control fluids for the oil and gas industry. Current techniques such as capacitive (dielectric) based measurement or passive acoustic systems have limitations and we report here an optoelectronic solution based upon fluorescence spectroscopy to provide a permanent monitoring solution. We report here a new class of optoelectronic subsea sensor for permanent, real time monitoring of hydrocarbon production systems. The system is capable of detecting small leaks of production or hydraulic fluid (ppm levels) over distances of 4-5 meters in a subsea environment. Ideally systems designed for such applications should be capable of working at depths of up to 3000m unattended for periods of 20+ years. The system uses advanced single emitter LED technology to meet the challenges of lifetime, power consumption, spatial coverage and delivery of a cost effective solution. The system is designed for permanent deployment on Christmas tree (XT), subsea processing systems (SPS) and associated equipment to provide enhanced leak detection capability.

  9. Ultrasensitive optoelectronic sensors for nitrogen oxides and explosives detection

    NASA Astrophysics Data System (ADS)

    Wojtas, J.; Bielecki, Z.; Stacewicz, T.; Mikolajczyk, J.

    2013-01-01

    The article describes application of cavity enhanced absorption spectroscopy (CEAS) for detection of nitrogen oxides and vapours of explosives. The oxides are important greenhouse gases that are of large influence on environment, living organisms and human health. These compounds are also markers of some human diseases as well as they are emitted by commonly used explosives. Therefore sensitive nitrogen oxides sensors are of great importance for many applications, e. g. for environment protection (air monitoring), for medicine investigation (analyzing of exhaled air) and finally for explosives detection. In the Institute of Optoelectronics MUT different types of optoelectronic sensors employing CEAS were developed. They were designed to measure trace concentration of nitrogen dioxide, nitric oxide, and nitrous oxide. The sensors provide opportunity for simultaneous measurement of these gases concentration at ppb level. Their sensitivity is comparable with sensitivities of instruments based on other methods, e.g. gas chromatography or mass spectrometry. Our sensors were used for some explosives detection as well. The experiment showed that the sensors provide possibility to detect explosive devices consisting of nitroglycerine, ammonium nitrate, TNT, PETN, RDX and HMX.

  10. Light-sensing ambipolar organic transistors for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Anthopoulos, Thomas D.; Wöbkenberg, Paul H.; Bradley, Donal D. C.

    2008-04-01

    Since their invention use of organic field-effect transistors (OFETs) has been restricted to applications that explore their unifunctional, i.e. current switching, characteristics. Recently, however, OFETs with additional functionalities have been designed and demonstrated with most notable examples the light-emitting (LE-OFET) [1] and light-sensing (LS-OFET) [2] transistors. These devices are of particular significance since design and fabrication of a new type of organic circuits can now be envisioned. Here we report on electro-optical circuits based on ambipolar LS-OFETs and unipolar OFETs. By carefully tuning the ambipolar transport of LS-OFETs their photosensitivity can be controlled and optimised. By going a step further and integrating LS-OFETs with unipolar OFETs we are able to demonstrate various optoelectronic circuits including electro-optical switches and logic gates. A unique characteristic of these gates is that their input signal(s) can be designed to be either all-optical or electro-optical. An additional advantage of the technology is that LS-OFETs can be integrated with the driving electronics using the same number of processing steps, hence eliminating the need of additional fabrication costs. This is one of the first demonstrations of organic circuits where signal processing involves the use of both optical and electrical input signals. Such optoelectronic devices/circuits could one day be explored in various applications including electro-optical transceivers and optical sensor arrays.

  11. Laser hyperdoping silicon for enhanced infrared optoelectronic properties

    NASA Astrophysics Data System (ADS)

    Warrender, Jeffrey M.

    2016-09-01

    Pulsed laser melting and rapid solidification have attracted interest for decades as a method to achieve impurity concentrations in silicon orders of magnitude above the equilibrium solubility limit. The incorporation of sulfur into silicon using this technique led to the observation of strong broadband infrared absorption in the resulting material. This observation, combined with interest in impurity band optoelectronic device concepts, has resulted in renewed interest in laser techniques for achieving high impurity concentrations. In this paper, I review the literature that led to the present understanding of laser hyperdoping and provide a summary of the optical and optoelectronic measurements made on sulfur hyperdoped silicon to date. I mention recent work exploring transition metal impurities and discuss how considerations discovered in early solidification and later rapid solidification work inform our approaches to kinetically trapping such impurities. I also provide a simplified picture of how a laser hyperdoping process is typically carried out, as an entry point for an experimentalist seeking to fabricate such layers.

  12. Nanoengineered quantum dot medium for space optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Oktyabrsky, S.; Tokranov, V.; Yakimov, M.; Sergeev, A.; Mitin, V.

    2012-10-01

    Resistance to temperature and ionizing radiation of space optoelectronic devices can be improved through control of carrier kinetics in nanoscale systems. Recent results in the science and technology of self-assembled heteroepitaxial InAs quantum dot (QD) medium related to photonic applications are discussed. Focus is placed on management of carrier kinetics via nanoengineering of electronic spectrum and potential profiles in the QD ensemble using modeling and controlled fabrication of QDs with molecular beam epitaxy. Shape-engineered QD sheets embedded into GaAs quantum wells were found to withstand two orders of magnitude higher proton dose than QWs and to account for high luminescence efficiency and thermally stable laser diodes. Built-in charge in QDs is responsible for improvement of both near and mid-IR optical absorption, but also control photoelectron lifetime in the structures. The negatively charged QD medium was the first QD material that has recently shown credible improvement of solar cell efficiency. It has resulted from IR energy harvesting and suppressed fast electron capture processes. It is thus expected that QD InAs/GaAs photovoltaics will overcome the efficiency and lifespan of multi-junction solar cells. Potentials due to QD built-in charge are also responsible for improved photoelectron lifetime in QD infrared photodetectors. QD correlated clusters provide even higher collective potential barriers around clusters and constitute the novel approach to the optoelectronic materials combining manageable photoelectron lifetime, high mobility, and tunable localized and conducting states.

  13. Rapidly and continuously frequency-scanning opto-electronic oscillator.

    PubMed

    Cen, Qizhuang; Dai, Yitang; Yin, Feifei; Zhou, Yue; Li, Jianqiang; Dai, Jian; Yu, Lan; Xu, Kun

    2017-01-23

    An opto-electronic oscillator (OEO) scheme which operates at "chirp oscillation" mode and generates low-phase-noise, frequency-swept microwave is proposed and experimentally demonstrated. This frequency-swept OEO is achieved by embedding a rapidly frequency-scanning microwave filter in an opto-electronic cavity. The filter has fixed passband while its center frequency scans rapidly and periodically at cavity round-trip time, covering a large frequency range (~GHz). Experimentally, the generated frequency-swept microwave is linear frequency-modulated continuous wave (FMCW) which centers at 7 GHz with 1-GHz bandwidth. Its instantaneous frequency varies linearly from 6.5 GHz to 7.5 GHz, back and forth, in a period of 12.8 μs, resulting in a frequency scanning rate of ~156 MHz/μs. The single-side-band (SSB) noise of the generated FMCW is -104 dBc/Hz at 10 kHz offset frequency, which is much lower than that from a commercial electronic arbitrary waveform generator (E-AWG). Improvement as large as 23 dB is experimentally reported.

  14. Optoelectronic measures in the analysis of running target shooting.

    PubMed

    Mononen, K; Viitasalo, J T; Era, P; Konttinen, N

    2003-06-01

    In this study, we examined the construct validity and practical significance of an optoelectronic shooting training system (Noptel ST 2000 Sport) for the technical analysis of running target shooting. A total of 37 male shooters of three different skill levels participated in the study. Principal component analysis revealed four common factors of 16 variables describing the aiming trajectory of the rifle barrel: (i) Holding area, (ii) Accuracy of aiming, (iii) Cleanness of triggering and (iv) Time on target. These factors were suggested to describe the essential components of running target shooting. According to the discriminant analysis, the shooters of various skill levels seemed to discriminate successfully into three groups when the aiming trajectory data were analysed. Finally, the aiming trajectory variables represented a 43% of the total variance in the shooting score. In summary, the present data indicated that the optoelectronic shooting training system had practical significance and supported the technical analysis of rifle barrel movement in running target shooting. A sub-set of variables, which reflect the essential information of running target shooting performance, were outlined for training and coaching purposes.

  15. Growing perovskite into polymers for easy-processable optoelectronic devices

    PubMed Central

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition. PMID:25579988

  16. Structural evolution and optoelectronic applications of multilayer silicene

    NASA Astrophysics Data System (ADS)

    Guo, Zhi-Xin; Zhang, Yue-Yu; Xiang, Hongjun; Gong, Xin-Gao; Oshiyama, Atsushi

    2015-11-01

    Despite the recent progress on two-dimensional multilayer materials (2DMMs) with weak interlayer interactions, the investigation of 2DMMs with strong interlayer interactions is far from sufficient. Here, we report on first-principles calculations that clarify the structural evolution and optoelectronic properties of such a 2DMM, multilayer silicene. With our global optimization algorithm, we discover the existence of rich dynamically stable multilayer silicene phases, whose stability is closely related to the extent of s p3 hybridization that can be evaluated by average bonds and effective bond angles. Stable Si(111) surface structures are obtained when the silicene thickness gets up to four, showing the critical thickness for a structural evolution. We also find that multilayer silicene with π -bonded surfaces presents outstanding optoelectronic properties for solar cells and optical fiber communications due to the incorporation of s p2 -type bonds in the s p3 -type bond dominated system. This study helps to complete the picture of the structure and related property evolution of 2DMMs with strong interlayer interactions.

  17. Microfluidic optoelectronic sensor for salivary diagnostics of stomach cancer.

    PubMed

    Zilberman, Yael; Sonkusale, Sameer R

    2015-05-15

    We present a microfluidic optoelectronic sensor for saliva diagnostics with a potential application for non-invasive early diagnosis of stomach cancer. Stomach cancer is the second most common cause of cancer-related deaths in the world. The primary identified cause is infection by a gram-negative bacterium Helicobacter pylori. These bacteria secrete the enzyme urease that converts urea into carbon dioxide (CO2) and ammonia (NH3), leading to their elevated levels in breath and body fluids. The proposed optoelectronic sensor will detect clinically relevant levels of CO2 and NH3 in saliva that can potentially be used for early diagnosis of stomach cancer. The sensor is composed of the embedded in a microfluidic device array of microwells filled with ion-exchange polymer microbeads doped with various organic dyes. The optical response of this unique highly diverse sensor is monitored over a broad spectrum, which provides a platform for cross-reactive sensitivity and allows detection of CO2 and NH3 in saliva at ppm levels. Copyright © 2014 Elsevier B.V. All rights reserved.

  18. Growing perovskite into polymers for easy-processable optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

  19. Wafer level optoelectronic device packaging using MEMS (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Nallani, Arunkumar; Chen, Ting; Lee, J.-B.; Hayes, Donald; Wallace, David

    2005-07-01

    The emergence of vertical cavity surface emitting laser (VCSEL) and photo diode (PD) arrays has given scope for the development of many applications such as high speed data communication. Further increase in performance can be obtained by the inclusion of micro-mirrors and microlens in the optical path between these components. However, the lack of efficient assembly and alignment techniques has become bottlenecks for new products. In this paper, we present development of optical sub-assembly and metallic MEMS structures that enable in the massively parallel assembly and alignment of these components to form a single miniature package. VCSEL wafer was processed to have polymer pedestal and polymeric lens on top of it. Such optical sub assembly greatly increases coupling efficiency between the VCSEL and optical fibers. Multiple numbers of suspended MEMS serpentine springs made out of electroplated nickel have been fabricated on ceramic substrates. These springs serve for clamping and alignment of multiple numbers of optoelectronic components. They are designed to be self-aligning with alignment accuracies of less than 3 micron after final assembly. Electrical connection between the bond pads of VCSEL's and PD's to the electrical leads on the substrate has been demonstrated by molten solder inkjet printing into precisely designed MEMS mold structures. This novel massively parallel assembly process is substrate independent and relatively simple process. This technique will provide reliable assembly of optoelectronic components and miniature optical systems in low cost mass production manner.

  20. Impact of optical antennas on active optoelectronic devices.

    PubMed

    Bonakdar, Alireza; Mohseni, Hooman

    2014-10-07

    Remarkable progress has been made in the fabrication and characterization of optical antennas that are integrated with optoelectronic devices. Herein, we describe the fundamental reasons for and experimental evidence of the dramatic improvements that can be achieved by enhancing the light-matter interaction via an optical antenna in both photon-emitting and -detecting devices. In addition, integration of optical antennas with optoelectronic devices can lead to the realization of highly compact multifunctional platforms for future integrated photonics, such as low-cost lab-on-chip systems. In this review paper, we further focus on the effect of optical antennas on the detectivity of infrared photodetectors. One particular finding is that the antenna can have a dual effect on the specific detectivity, while it can elevate light absorption efficiency of sub-wavelength detectors, it can potentially increase the noise of the detectors due to the enhanced spontaneous emission rate. In particular, we predict that the detectivity of interband photon detectors can be negatively affected by the presence of optical antennas across a wide wavelength region covering visible to long wavelength infrared bands. In contrast, the detectivity of intersubband detectors could be generally improved with a properly designed optical antenna.

  1. Picosecond photoconductive devices for 10 Gbit/s optoelectronic switching

    NASA Astrophysics Data System (ADS)

    Veith, G.

    1985-03-01

    Semiconductor materials with a high density of recombination and trapping centers exhibit extremely short carrier lifetimes in the order of 1 to 100 ps and have been the base for the development of high speed optoelectronic switches. These devices are activated by picosecond laser pulses and can be driven nearly free of jitter with respect to the optical excitation pulses. They show some unique properties as picosecond risetimes and response times and can be operated within a relatively high dynamical range (10-5 to 10 sub 4 V) (0.00001 to 0.0001 V). A review is given on the wide field of possible applications of the ultrafast photoconductive switches. They can be used as photodetectors for picosecond light pulses as well as sampling gates for the characterization of high speed electronic and optoelectronic devices. In some experiments which are discussed more in detail the author demonstrates the capability of this type of photoconductive switches for the generation of picosecond infrared pulse trains in laser diodes and for the generation of high-bit rate electrical codes for use in Gbit/s optical communication and sensing systems, for logical switching and for testing purposes of high speed electronic instrumentations.

  2. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOEpatents

    Shtein, Max; Yang, Fan; Forrest, Stephen R.

    2008-09-02

    A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.

  3. Prediction of Silicon-Based Layered Structures for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Luo, Wei; Ma, Yanming; Gong, Xingao; Xiang, Hongjun; CCMG Team

    2015-03-01

    A method based on the particle swarm optimization (PSO) algorithm is presented to design quasi-two-dimensional (Q2D) materials. With this development, various single-layer and bi-layer materials in C, Si, Ge, Sn, and Pb were predicted. A new Si bi-layer structure is found to have a much-favored energy than the previously widely accepted configuration. Both single-layer and bi-layer Si materials have small band gaps, limiting their usages in optoelectronic applications. Hydrogenation has therefore been used to tune the electronic and optical properties of Si layers. We discover two hydrogenated materials of layered Si8H2andSi6H2 possessing quasi-direct band gaps of 0.75 eV and 1.59 eV, respectively. Their potential applications for light emitting diode and photovoltaics are proposed and discussed. Our study opened up the possibility of hydrogenated Si layered materials as next-generation optoelectronic devices.

  4. Laser applications in the electronics and optoelectronics industry in Japan

    NASA Astrophysics Data System (ADS)

    Washio, Kunihiko

    1999-07-01

    This paper explains current status and technological trends in laser materials processing applications in electronics and optoelectronics industry in Japan. Various laser equipment based on solid state lasers or gas lasers such as excimer lasers or CO2 lasers has been developed and applied in manufacturing electronic and optoelectronic devices to meet the strong demands for advanced device manufacturing technologies for high-performance, lightweight, low power-consumption portable digital electronic appliances, cellular mobile phones, personal computers, etc. Representative applications of solid-state lasers are, opaque and clear defects repairing of photomasks for LSIs and LCDs, trimming of thick-film chip resistors and low resistance metal resistors, laser cutting and drilling of thin films for high-pin count semiconductor CSP packages, laser patterning of thin-film amorphous silicon solar cells, and laser welding of electronic components such as hard-disk head suspensions, optical modules, miniature relays and lithium ion batteries. Compact and highly efficient diode- pumped and Q-switched solid-state lasers in second or third harmonic operation mode are now being increasingly incorporated in various laser equipment for fine material processing. Representative applications of excimer lasers are, sub-quarter micron design-rule LSI lithography and low- temperature annealing of poly-silicon TFT LCD.

  5. A hemispherical electronic eye camera based on compressible silicon optoelectronics.

    PubMed

    Ko, Heung Cho; Stoykovich, Mark P; Song, Jizhou; Malyarchuk, Viktor; Choi, Won Mook; Yu, Chang-Jae; Geddes, Joseph B; Xiao, Jianliang; Wang, Shuodao; Huang, Yonggang; Rogers, John A

    2008-08-07

    The human eye is a remarkable imaging device, with many attractive design features. Prominent among these is a hemispherical detector geometry, similar to that found in many other biological systems, that enables a wide field of view and low aberrations with simple, few-component imaging optics. This type of configuration is extremely difficult to achieve using established optoelectronics technologies, owing to the intrinsically planar nature of the patterning, deposition, etching, materials growth and doping methods that exist for fabricating such systems. Here we report strategies that avoid these limitations, and implement them to yield high-performance, hemispherical electronic eye cameras based on single-crystalline silicon. The approach uses wafer-scale optoelectronics formed in unusual, two-dimensionally compressible configurations and elastomeric transfer elements capable of transforming the planar layouts in which the systems are initially fabricated into hemispherical geometries for their final implementation. In a general sense, these methods, taken together with our theoretical analyses of their associated mechanics, provide practical routes for integrating well-developed planar device technologies onto the surfaces of complex curvilinear objects, suitable for diverse applications that cannot be addressed by conventional means.

  6. Optoelectronic scanning system upgrade by energy center localization methods

    NASA Astrophysics Data System (ADS)

    Flores-Fuentes, W.; Sergiyenko, O.; Rodriguez-Quiñonez, J. C.; Rivas-López, M.; Hernández-Balbuena, D.; Básaca-Preciado, L. C.; Lindner, L.; González-Navarro, F. F.

    2016-11-01

    A problem of upgrading an optoelectronic scanning system with digital post-processing of the signal based on adequate methods of energy center localization is considered. An improved dynamic triangulation analysis technique is proposed by an example of industrial infrastructure damage detection. A modification of our previously published method aimed at searching for the energy center of an optoelectronic signal is described. Application of the artificial intelligence algorithm of compensation for the error of determining the angular coordinate in calculating the spatial coordinate through dynamic triangulation is demonstrated. Five energy center localization methods are developed and tested to select the best method. After implementation of these methods, digital compensation for the measurement error, and statistical data analysis, a non-parametric behavior of the data is identified. The Wilcoxon signed rank test is applied to improve the result further. For optical scanning systems, it is necessary to detect a light emitter mounted on the infrastructure being investigated to calculate its spatial coordinate by the energy center localization method.

  7. Development of an optoelectronic holographic platform for otolaryngology applications

    NASA Astrophysics Data System (ADS)

    Harrington, Ellery; Dobrev, Ivo; Bapat, Nikhil; Flores, Jorge Mauricio; Furlong, Cosme; Rosowski, John; Cheng, Jeffery Tao; Scarpino, Chris; Ravicz, Michael

    2010-08-01

    In this paper, we present advances on our development of an optoelectronic holographic computing platform with the ability to quantitatively measure full-field-of-view nanometer-scale movements of the tympanic membrane (TM). These measurements can facilitate otologists' ability to study and diagnose hearing disorders in humans. The holographic platform consists of a laser delivery system and an otoscope. The control software, called LaserView, is written in Visual C++ and handles communication and synchronization between hardware components. It provides a user-friendly interface to allow viewing of holographic images with several tools to automate holography-related tasks and facilitate hardware communication. The software uses a series of concurrent threads to acquire images, control the hardware, and display quantitative holographic data at video rates and in two modes of operation: optoelectronic holography and lensless digital holography. The holographic platform has been used to perform experiments on several live and post-mortem specimens, and is to be deployed in a medical research environment with future developments leading to its eventual clinical use.

  8. Bioinspired Transparent Laminated Composite Film for Flexible Green Optoelectronics.

    PubMed

    Lee, Daewon; Lim, Young-Woo; Im, Hyeon-Gyun; Jeong, Seonju; Ji, Sangyoon; Kim, Yong Ho; Choi, Gwang-Mun; Park, Jang-Ung; Lee, Jung-Yong; Jin, Jungho; Bae, Byeong-Soo

    2017-07-19

    Herein, we report a new version of a bioinspired chitin nanofiber (ChNF) transparent laminated composite film (HCLaminate) made of siloxane hybrid materials (hybrimers) reinforced with ChNFs, which mimics the nanofiber-matrix structure of hierarchical biocomposites. Our HCLaminate is produced via vacuum bag compressing and subsequent UV-curing of the matrix resin-impregnated ChNF transparent paper (ChNF paper). It is worthwhile to note that this new type of ChNF-based transparent substrate film retains the strengths of the original ChNF paper and compensates for ChNF paper's drawbacks as a flexible transparent substrate. As a result, compared with high-performance synthetic plastic films, such as poly(ethylene terephthalate), poly(ether sulfone), poly(ethylene naphthalate), and polyimide, our HCLaminate is characterized to exhibit extremely smooth surface topography, outstanding optical clarity, high elastic modulus, high dimensional stability, etc. To prove our HCLaminate as a substrate film, we use it to fabricate flexible perovskite solar cells and a touch-screen panel. As far as we know, this work is the first to demonstrate flexible optoelectronics, such as flexible perovskite solar cells and a touch-screen panel, actually fabricated on a composite film made of ChNF. Given its desirable macroscopic properties, we envision our HCLaminate being utilized as a transparent substrate film for flexible green optoelectronics.

  9. Larger bases and mixed analog/digital neural nets

    SciTech Connect

    Beiu, V.

    1998-12-31

    The paper overviews results dealing with the approximation capabilities of neural networks, and bounds on the size of threshold gate circuits. Based on an explicit numerical algorithm for Kolmogorov`s superpositions the authors show that minimum size neural networks--for implementing any Boolean function--have the identity function as the activation function. Conclusions and several comments on the required precision are ending the paper.

  10. Analog approach to mixed analog-digital circuit simulation

    NASA Astrophysics Data System (ADS)

    Ogrodzki, Jan

    2013-10-01

    Logic simulation of digital circuits is a well explored research area. Most up-to-date CAD tools for digital circuits simulation use an event driven, selective trace algorithm and Hardware Description Languages (HDL), e.g. the VHDL. This techniques enable simulation of mixed circuits, as well, where an analog part is connected to the digital one through D/A and A/D converters. The event-driven mixed simulation applies a unified, digital-circuits dedicated method to both digital and analog subsystems. In recent years HDL techniques have been also applied to mixed domains, as e.g. in the VHDL-AMS. This paper presents an approach dual to the event-driven one, where an analog part together with a digital one and with converters is treated as the analog subsystem and is simulated by means of circuit simulation techniques. In our problem an analog solver used yields some numerical problems caused by nonlinearities of digital elements. Efficient methods for overriding these difficulties have been proposed.

  11. a 9-BIT, Pipelined Gallium Arsenide Analog-Digital Converter

    NASA Astrophysics Data System (ADS)

    Breevoort, Cornelius Marius

    1992-01-01

    Excellent Short Take-Off and Landing (STOL) performance is achieved by Upper Surface Blowing (USB) aircraft as a result of mounting high by-pass turbofan engines over the forward part of the wing. High lift levels are generated by directing the engine exhaust over the wing upper surface to entrain additional airflow and by using the Coanda effect to turn the exhaust flow downward over a large radius "Coanda" flap. Commercial application of USB technology could reduce airport congestion and community noise if future configurations can be designed with economically acceptable cruise drag levels. An experimental investigation of the high speed aerodynamics of USB aircraft configurations has been conducted to accurately define the magnitude and causes of the powered configuration cruise drag. A highly instrumented wind tunnel model of a realistic USB configuration has been used which permitted parametric variations in the number and spanwise location of the nacelles and accurately modeled the engine power effects with turbofan propulsion simulators. The measured force data provides an accurate definition of the cruise drag penalty associated with each configuration and the constructed pressure contour plots provide detailed insight into their causes. It was found that the high speed aerodynamics of USB configurations is a complex interaction of jet induced and wing transonic flowfields. The presence of the nacelles on the wing upper surface created a severe drag penalty which increased with freestream Mach number, power setting and angle of attack. The more widely spaced two nacelle configurations exhibited improved flowfields at moderate Mach numbers but suffered from drag levels comparable to the baseline configuration for high speed cruise conditions. At high Mach numbers and power settings, all of the tested configurations displayed strong shocks and separated zones in the wing/nacelle junction regions. Detailed discussions of the causes of the cruise drag penalty and recommended future design improvements are presented.

  12. (Nanotechnology Initiative) Revision of Quantum Engineering of Nanostructures for Optoelectronic Devices with Optimum Performance

    DTIC Science & Technology

    2011-10-11

    Colloidal Quantum Dots (QDs) in Optoelectronic Devices --- Solar Cells ...Li, Vaishnavi Narayanamurthy, Kitt Reinhardt, and Michael A. Stroscio, Colloidal Quantum Dots (QDs) in Optoelectronic Devices --- Solar Cells ...Mitra Dutta, and Michael A. Stroscio, Photodetector Based on GaN Double-Barrier Resonant Tunneling Diode Coupled with Colloidal Quantum Dots ,

  13. Recovery of Spectrally Overlapping QPSK Signals Using a Nonlinear Optoelectronic Filter

    DTIC Science & Technology

    2017-03-19

    b) [Type text ] Figure 1: (a) System diagram showing two transmitted signals that are QPSK...b) [Type text ] Figure 2: (a) Optoelectronic filter output showing the suppression of a large-signal interferer relative to a small...further refinements of the optoelectronic filter. 3. References [Type text ] [1] W. Loh, S. Yegnanarayanan, R. J. Ram, and P. W. Juodawlkis

  14. 75 FR 41891 - In the Matter of Certain Optoelectronic Devices, Components Thereof, and Products Containing the...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-19

    ... COMMISSION In the Matter of Certain Optoelectronic Devices, Components Thereof, and Products Containing the... devices, components thereof, or products containing the same by reason of infringement of certain claims... optoelectronic devices, components thereof, and products containing the same that are covered by one or more...

  15. Optoelectronic method for detection of cervical intraepithelial neoplasia and cervical cancer

    NASA Astrophysics Data System (ADS)

    Pruski, D.; Przybylski, M.; Kędzia, W.; Kędzia, H.; Jagielska-Pruska, J.; Spaczyński, M.

    2011-12-01

    The optoelectronic method is one of the most promising concepts of biophysical program of the diagnostics of CIN and cervical cancer. Objectives of the work are evaluation of sensitivity and specificity of the optoelectronic method in the detection of CIN and cervical cancer. The paper shows correlation between the pNOR number and sensitivity/specificity of the optoelectronic method. The study included 293 patients with abnormal cervical cytology result and the following examinations: examination with the use of the optoelectronic method — Truscreen, colposcopic examination, and histopathologic biopsy. Specificity of the optoelectronic method for LGSIL was estimated at 65.70%, for HGSIL and squamous cell carcinoma of cervix amounted to 90.38%. Specificity of the optoelectronic method used to confirm lack of cervical pathology was estimated at 78.89%. The field under the ROC curve for the optoelectronic method was estimated at 0.88 (95% CI, 0.84-0.92) which shows high diagnostic value of the test in the detection of HGSIL and squamous cell carcinoma. The optoelectronic method is characterised by high usefulness in the detection of CIN, present in the squamous epithelium and squamous cell carcinoma of cervix.

  16. Growth and characterization of silicon-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Filios, Adam A.

    Photonics, a blending of optics and electronics, has emerged as one of the world's most rapidly developing fields. Along with microelectronics, they constitute the core technologies of the information industry, and their advances are complementing each other in the tasks of the acquisition, transmission, storage, and processing of increasing amounts of information. Microelectronic device integration has progressed to the point that complete "systems-on-the-chip" have been realized. Photonic materials need to be integrated with standard electronic circuits for the implementation of the next generation optoelectronic "super-chip" where both electrons and photons participate in the transmission and processing of information. Silicon is the cornerstone material in conventional VLSI systems. However, having a relatively small and indirect fundamental energy band-gap, silicon is an inefficient lightemitter. On the other hand, direct integration of III-V photonic materials on a silicon chip is still very problematic. Squeezing light out of silicon itself appears to be an attractive alternative. Light emission from silicon is an important fundamental issue with enormous technological implications. In this work we explore several strategies towards developing silicon based optoelectronic devices. Porous silicon, a material produced by electrochemically etching silicon in aqueous hydrofluoric acid solutions, generated great interest in the early 1990s when it was shown to exhibit relatively bright, room temperature, visible photoluminescence. However, having a poor surface morphology, the material is fragile and chemically unstable leading to degradation of light emission and preventing integration with silicon processing technology. With the development of the epitaxially grown crystalline-Si/O superlattice, we attempt to overcome the morphological problems of porous silicon, retaining its light emission characteristics. Our multilayer c-Si/O device consists of thin silicon

  17. A Long-Term View on Perovskite Optoelectronics.

    PubMed

    Docampo, Pablo; Bein, Thomas

    2016-02-16

    Recently, metal halide perovskite materials have become an exciting topic of research for scientists of a wide variety of backgrounds. Perovskites have found application in many fields, starting from photovoltaics and now also making an impact in light-emitting applications. This new class of materials has proven so interesting since it can be easily solution processed while exhibiting materials properties approaching the best inorganic optoelectronic materials such as GaAs and Si. In photovoltaics, in only 3 years, efficiencies have rapidly increased from an initial value of 3.8% to over 20% in recent reports for the commonly employed methylammonium lead iodide (MAPI) perovskite. The first light emitting diodes and light-emitting electrochemical cells have been developed already exhibiting internal quantum efficiencies exceeding 15% for the former and tunable light emission spectra. Despite their processing advantages, perovskite optoelectronic materials suffer from several drawbacks that need to be overcome before the technology becomes industrially relevant and hence achieve long-term application. Chief among these are the sensitivity of the structure toward moisture and crystal phase transitions in the device operation regime, unreliable device performance dictated by the operation history of the device, that is, hysteresis, the inherent toxicity of the structure, and the high cost of the employed charge selective contacts. In this Account, we highlight recent advances toward the long-term viability of perovskite photovoltaics. We identify material decomposition routes and suggest strategies to prevent damage to the structure. In particular, we focus on the effect of moisture upon the structure and stabilization of the material to avoid phase transitions in the solar cell operating range. Furthermore, we show strategies to achieve low-cost chemistries for the development of hole transporters for perovskite solar cells, necessary to be able to compete with other

  18. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  19. Optoelectronic delay-time controller for laser pulses.

    PubMed

    Lin, G R

    2000-06-01

    A dc-voltage-controlled optoelectronic delay line for continuous tuning of the relative delay time of an optical pulse train generated from a gain-switched laser diode is demonstrated. A maximum tunable range delay time of 3.9 ns ( approximately 2 periods) for optical pulses at a 500-MHz repetition rate is reported, which corresponds to a phase shift of as much as 4pi. The tuning responsivity and resolution of the current apparatus are 0.54 ps/mV and <0.2 ps, respectively. The measured timing fluctuation and long-term drift at any delay time are 0.13 ps and 20 fs/min, respectively. This scheme further permits the simultaneous phase tracking of the laser pulse train to unknown signals generated from the device under test.

  20. Complex of optoelectronic facilities for the nuclear industry

    NASA Astrophysics Data System (ADS)

    Chugui, Yu. V.; Golubev, I. V.; Gushchina, A. A.; Ladygin, V. I.; Kuchinskii, K. I.; Pastushenko, A. I.; Plotnikov, S. V.; Sysoev, E. V.; Yunoshev, V. P.; Blinov, A. M.; Veretennikov, O. A.; Lositskii, A. F.; Filippov, V. B.; Cheremnykh, G. S.; Zarubin, M. G.; Karlov, Yu. K.; Petrov, A. N.; Rozhkov, V. V.; Chapaev, I. G.; Lavrenyuk, P. I.; Pimenov, Yu. V.

    2006-02-01

    The safety and high operating reliability of nuclear reactors can be assured only by 100% noncontact monitoring of the geometrical parameters of the heat-producing assemblies that make them up. To solve this problem, a complex of optoelectronic facilities has been developed and created at the Design-Technological Institute of Scientific Instrumentation, Siberian Branch, Russian Academy of Sciences. These include the KONTROL' system for measuring the geometrical parameters of the heat-producing elements (HPEs) of nuclear reactors VVÉR-1000 and VVÉR-440, the LMM laser measurement machine for monitoring the geometrical parameters of the spacer grids, system GRAD for dimensional monitoring of the end fittings of the HPEs, and the PROFIL' system for measuring the relief and depth of surface defects of the HPEs. The operating principles, the structure, the technical characteristics, and results of production tests of the resulting facilities are given.

  1. Transparent electrode of nanoscale metal film for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lee, Illhwan; Lee, Jong-Lam

    2015-01-01

    This paper reviews the principles, impediments, and recent progress in the development of ultrathin flexible Ag electrodes for use in flexible optoelectronic devices. Thin Ag-based electrodes are promising candidates for next-generation flexible transparent electrodes. Thin Ag-based electrodes that have a microcavity structure show the best device performance, but have relatively low optical transmittance (OT) due to reflection and absorption of photons by the thin Ag; this trait causes problems such as spectral narrowing and change of emission color with viewing angle in white organic light-emitting diodes. Thinning the Ag electrode to <-10 nm thickness (ultrathin Ag) is an approach to overcome these problems. This ultrathin Ag electrode has a high OT, while providing comparable sheet resistance similar to indium tin oxide. As the OT of the electrode increases, the cavity is weakened, so the spectral width of the emission and the angular color stability are increased.

  2. Digital optical computers at the optoelectronic computing systems center

    NASA Technical Reports Server (NTRS)

    Jordan, Harry F.

    1991-01-01

    The Digital Optical Computing Program within the National Science Foundation Engineering Research Center for Opto-electronic Computing Systems has as its specific goal research on optical computing architectures suitable for use at the highest possible speeds. The program can be targeted toward exploiting the time domain because other programs in the Center are pursuing research on parallel optical systems, exploiting optical interconnection and optical devices and materials. Using a general purpose computing architecture as the focus, we are developing design techniques, tools and architecture for operation at the speed of light limit. Experimental work is being done with the somewhat low speed components currently available but with architectures which will scale up in speed as faster devices are developed. The design algorithms and tools developed for a general purpose, stored program computer are being applied to other systems such as optimally controlled optical communication networks.

  3. Injectable, Cellular-Scale Optoelectronics with Applications for Wireless Optogenetics

    PubMed Central

    Kim, Tae-il; McCall, Jordan G.; Jung, Yei Hwan; Huang, Xian; Siuda, Edward R.; Li, Yuhang; Song, Jizhou; Song, Young Min; Pao, Hsuan An; Kim, Rak-Hwan; Lu, Chaofeng; Lee, Sung Dan; Song, Il-Sun; Shin, Gun Chul; Al-Hasani, Ream; Kim, Stanley; Tan, Meng Peun; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.; Bruchas, Michael R.

    2013-01-01

    Successful integration of advanced semiconductor devices with biological systems will accelerate basic scientific discoveries and their translation into clinical technologies. In neuroscience generally, and in optogenetics in particular, an ability to insert light sources, detectors, sensors and other components into precise locations of the deep brain could yield versatile and important capabilities. Here, we introduce an injectable class of cellular-scale optoelectronics that offers such features, with examples of unmatched operational modes in optogenetics, including completely wireless and programmed complex behavioral control over freely moving animals. The ability of these ultrathin, mechanically compliant, biocompatible devices to afford minimally invasive operation in the soft tissues of the mammalian brain foreshadow applications in other organ systems, with potential for broad utility in biomedical science and engineering. PMID:23580530

  4. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-03-22

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  5. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-01-05

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  6. Advanced Opto-Electronics (LIDAR and Microsensor Development)

    NASA Technical Reports Server (NTRS)

    Vanderbilt, Vern C. (Technical Monitor); Spangler, Lee H.

    2005-01-01

    Our overall intent in this aspect of the project were to establish a collaborative effort between several departments at Montana State University for developing advanced optoelectronic technology for advancing the state-of-the-art in optical remote sensing of the environment. Our particular focus was on development of small systems that can eventually be used in a wide variety of applications that might include ground-, air-, and space deployments, possibly in sensor networks. Specific objectives were to: 1) Build a field-deployable direct-detection lidar system for use in measurements of clouds, aerosols, fish, and vegetation; 2) Develop a breadboard prototype water vapor differential absorption lidar (DIAL) system based on highly stable, tunable diode laser technology developed previously at MSU. We accomplished both primary objectives of this project, in developing a field-deployable direct-detection lidar and a breadboard prototype of a water vapor DIAL system. Paper summarizes each of these accomplishments.

  7. Exceptional Optoelectronic Properties of Si-related compounds

    NASA Astrophysics Data System (ADS)

    Huang, Bing; Zhuang, Houlong; Yoon, Mina; Wei, Su-Huai; Sumpter, Bobby

    2015-03-01

    The search of new silicon-related functional compounds are of great interests but still very changeling. In the last few decades, researchers have heavily studied the structural and electronic properties of silicon in order to improve its optical absorption in the visible light range using analyses of metastable silicon phases, silicon-based alloys, and silicon-based superlattices. In this talk, I will present our recent theoretical efforts on searching and designing new silicon phases, from bulk to two-dimensional (2D) silicon, with exceptional optoelectronic properties. Especially, we find that chemically functionalized 2D silicon and silicon alloys could be the best candidates to create efficient thin-film solar absorbers and silicon-based, white-light-emitting diodes, paving the way for new ``green'' energy applications.

  8. Modifying the Optoelectronic Properties of Rubrene by Strain

    NASA Astrophysics Data System (ADS)

    Sharifzadeh, Sahar; Ramasubramaniam, Ashwin

    Rubrene crystals are promising organic electronic and optoelectronic materials due to their high charge carrier mobility. Recent studies have shown that the electronic properties of rubrene films can be tuned by substrate-induced strain, suggesting a new route towards the design of more efficient devices. Here, we present a first-principles density functional theory and many-body perturbation theory analysis of strain-induced changes to the mechanical, electronic, and optical properties of rubrene crystals. With an applied strain that is consistent with experiment, we predict changes of hole motilities in excellent agreement with electrical conductivity measurements. Furthermore, we predict that the optical absorption and nature of low-energy excitons within the crystal can be tuned by an applied strain as low as 1%. This work utilized resources at the Center for Nanoscale Materials, supported by the U.S. Department of Energy under Contract No. DE-AC02-06CH11357.

  9. EDITORIAL: Focus on Advanced Semiconductor Heterostructures for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Amann, Markus C.; Capasso, Federico; Larsson, Anders; Pessa, Markus

    2009-12-01

    Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures. Focus on Advanced Semiconductor Heterostructures for Optoelectronics Contents Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert and G Tränkle GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, F Guillot, G Pozzovivo, M Tchernycheva, A Lupu, L Vivien, P Crozat, E Warde, C Bougerol, S Schacham, G Strasser, G Bahir, E Monroy and F H Julien Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction/injection stage Maria I Amanti, Giacomo Scalari, Romain Terazzi, Milan Fischer, Mattias Beck, Jérôme Faist, Alok Rudra, Pascal Gallo and Eli Kapon Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Young Joon Hong, Jong-Myeong Jeon, Miyoung

  10. Optoelectronic investigation of nanodiamond interactions with human blood

    NASA Astrophysics Data System (ADS)

    Ficek, M.; Wróbel, M. S.; Wasowicz, M.; Jedrzejewska-Szczerska, M.

    2016-03-01

    We present optoelectronic investigation of in vitro interactions of whole human blood with different nanodiamond biomarkers. Plasmo-chemical modifications of detonation nanodiamond particles gives the possibility for controlling their surface for biological applications. Optical investigations reveal the biological activity of nanodiamonds in blood dependent on its surface termination. We compare different types of nanodiamonds: commercial non-modified detonation nanodiamonds, and nanodiamonds modified by MW PACVD method with H2-termination, and chemically modified nanodiamond with O2-termination. The absorption spectra, and optical microscope investigations were conducted. The results indicate haemocompatibility of non-modified detonation nanodiamond as well as modified nanodiamonds, which enables their application for drug delivery, as well as sensing applications.

  11. Three-dimensional integration of VCSEL-based optoelectronics

    NASA Astrophysics Data System (ADS)

    Louderback, Duane A.; Lin, Hung-Cheng; Fish, Melanie A.; Cheng, Julien; Guilfoyle, Peter S.

    2005-03-01

    A monolithic optoelectronic device structure with the potential to enable VCSEL-based photonic integrated circuits on GaAs is presented. Using integrated diffraction gratings, the device structure enables the optical output of VCSELs to be coupled to an internal horizontal waveguide, while the optical signals in the waveguide are tapped off to resonant cavity detectors. Since horizontal waveguides are used to route the optical signals between devices, the output mirror transmission of the VCSELs can be eliminated, although we have chosen to retain a small amount of transmission in the top DBR to enable on-wafer testing. The design and fabrication of the monolithically integrated structure, including epitaxial regrowth, is discussed and initial device characteristics are presented.

  12. Opto-electronic transport properties of graphene oxide based devices

    SciTech Connect

    Das, Poulomi; Ibrahim, Sk; Pal, Tanusri; Chakraborty, Koushik; Ghosh, Surajit

    2015-06-24

    Large area, solution-processed, graphene oxide (GO)nanocomposite based photo FET has been successfully fabricated. The device exhibits p-type charge transport characteristics in dark condition. Our measurements indicate that the transport characteristics are gate dependent and extremely sensitive to solar light. Photo current decay mechanism of GO is well explained and is associated with two phenomena: a) fast response process and b) slow response process. Slow response photo decay can be considered as the intrinsic phenomena which are present for both GO and reduced GO (r-GO), whereas the first response photo decay is controlled by the surface defect states. Demonstration of photo FET performance of GO thin film is a significant step forward in integrating these devices in various optoelectronic circuits.

  13. Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

    NASA Technical Reports Server (NTRS)

    Pavlidis, Dimitris

    1991-01-01

    The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

  14. Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

    PubMed

    Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

    2016-11-15

    Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

  15. Laser micromachining of thin films for optoelectronic devices and packages

    NASA Astrophysics Data System (ADS)

    Moore, David F.; Williams, John A.; Hopcroft, Matthew A.; Boyle, Billy; He, Johnny H.; Syms, Richard R. A.

    2003-04-01

    Focused laser micromachining in an optical microscope system is used to prototype packages for optoelectronic devices and to investigate new materials with potential applications in packaging. Micromachined thin fims are proposed as mechanical components to locate fibers and other optical and electrical components on opto-assemblies. This paper reports prototype structures which are micromachined in silicon carbide to produce beams 5 μm thick by (1) laser cutting a track in a SiC coated Si wafer, (2) undercutting by anisotropic silicon etching using KOH in water, and (3) trimming if necessary with the laser system. This approach has the advantage of fast turn around and proof of concept. Mechanical test data are obtained from the prototype SiC beam package structures by testing with a stylus profilometer. The Youngs modulus obtained for chemical vapor deposited silicon carbide is 360 +/- 50 GPa indicating that it is a promising material for packaging applications.

  16. A nonlinear optoelectronic filter for electronic signal processing.

    PubMed

    Loh, William; Yegnanarayanan, Siva; Ram, Rajeev J; Juodawlkis, Paul W

    2014-01-09

    The conversion of electrical signals into modulated optical waves and back into electrical signals provides the capacity for low-loss radio-frequency (RF) signal transfer over optical fiber. Here, we show that the unique properties of this microwave-photonic link also enable the manipulation of RF signals beyond what is possible in conventional systems. We achieve these capabilities by realizing a novel nonlinear filter, which acts to suppress a stronger RF signal in the presence of a weaker signal independent of their separation in frequency. Using this filter, we demonstrate a relative suppression of 56 dB for a stronger signal having a 1-GHz center frequency, uncovering the presence of otherwise undetectable weaker signals located as close as 3.5 Hz away. The capabilities of the optoelectronic filter break the conventional limits of signal detection, opening up new possibilities for radar and communication systems, and for the field of precision frequency metrology.

  17. Analog optoelectronic independent component analysis for radio frequency signals

    NASA Astrophysics Data System (ADS)

    Baylor, Martha-Elizabeth

    This thesis addresses the problem of blind source separation of signals at radio frequencies. Independent component analysis (ICA), which includes a second-order decorrelation followed by a fourth-order decorrelation, uses signal independence to estimate the original signals from the received mixtures. Until now, ICA has been applied to many applications at or below audio frequencies. The work presented here demonstrates that an optoelectronic implementation using the parallel processing nature of dynamic holography can overcome the computational difficulties associated with algorithmic implementations of ICA. The holographic nature of a photorefractive crystal combined with the non-linearity of an electro-optic modulator in a feedback loop can be described by a nonlinear dynamical equation. The dynamics can be cast in the form of Lotka-Volterra equations used to study the dynamics of competing populations of species. Although this analogy with the animal world is interesting, the dynamical equation associated with the fourth-order decorrelation system is fascinating. The statistics associated with the original signals, rather than an external potential, determine the dynamics of the system. In particular, the system is multistable, metastable, or monostable depending on whether the probability density functions of the original signals are sub-Gaussian, Gaussian, or super-Gaussian, respectively. The multistable solution, which occurs for sub-Gaussian signals, provides the winner-takes-all behavior required to separate signals. This ability to separate sub-Gaussian signals is advantageous since signals modulated on a sinusoidal carrier are sub-Gaussian. The fourth-order decorrelation system achieves greater than 40 dB signal separation on 200 MHz single-frequency sine waves and greater than 20 dB signal separation for 10 MHz bandwidth signals. The system performance is degraded by 10 to 20 dB when mixed electronically due to imperfections in the mixing circuitry

  18. Opto-Electronic Oscillator Stabilized By A Hyperfine Atomic Transition

    NASA Technical Reports Server (NTRS)

    Strekalov, Dmitry; Aveline, David; Matsko, Andrey B.; Thompson, Robert; Yu, Nan

    2004-01-01

    Opto-electronic oscillator (OEO) is a closed-loop system with part of the loop is implemented by an optical beam, and the rest by RF circuitry. The technological advantage of this approach over traditional all-RF loops in the gigahertz range comes from the that frequency filtering can be done far more efficiently in the optical range with compact, low power, and have superior stability. In this work, we report our preliminary results on using the phenomenon of coherent population trapping in (87) Rb vapor as an optical filter. Such a filter allows us to stabilize the OEO at the hyperfine splitting frequency of rubidium, thus implementing a novel type of frequency standard.

  19. Spatially resolved optoelectronic characterization of perovskite lead iodide nanostructures

    NASA Astrophysics Data System (ADS)

    Xiao, Rui; Peng, Xingyu; Hou, Yasen; Yu, Dong

    The high power conversion efficiency of organo-lead halide perovskite-based solar cells has attracted world-wide attention over the past few years. The high efficiency was believed to originate from the unusual properties including long carrier lifetimes and consequent long carrier diffusion lengths in these materials. Ion drift, ferroelectricity, and charge traps have been proposed to account for the efficient charge separation and photocurrent hysteresis. However, it remains unclear which mechanism is dominating. We fabricate field effect transistors (FETs) incorporating single nanoplates/nanowires of organic perovskite and perform scanning photocurrent microscopic (SPCM) measurements to extract carrier diffusion lengths as a function of gate voltage, source-drain bias. Spatially resolved optoelectronic investigations of single crystalline perovskite nanostructures provide valuable information and key evidence on distinguishing the dominating charge transport/separation mechanism.

  20. Optoelectronic Properties of Semiconductor Quantum Dot Solids for Photovoltaic Applications.

    PubMed

    Chistyakov, A A; Zvaigzne, M A; Nikitenko, V R; Tameev, A R; Martynov, I L; Prezhdo, O V

    2017-09-07

    Quantum dot (QD) solids represent a new type of condensed matter drawing high fundamental and applied interest. Quantum confinement in individual QDs, combined with macroscopic scale whole materials, leads to novel exciton and charge transfer features that are particularly relevant to optoelectronic applications. This Perspective discusses the structure of semiconductor QD solids, optical and spectral properties, charge carrier transport, and photovoltaic applications. The distance between adjacent nanoparticles and surface ligands influences greatly electrostatic interactions between QDs and, hence, charge and energy transfer. It is almost inevitable that QD solids exhibit energetic disorder that bears many similarities to disordered organic semiconductors, with charge and exciton transport described by the multiple trapping model. QD solids are synthesized at low cost from colloidal solutions by casting, spraying, and printing. A judicious selection of a layer sequence involving QDs with different size, composition, and ligands can be used to harvest sunlight over a wide spectral range, leading to inexpensive and efficient photovoltaic devices.

  1. Recent developments in InP-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Venghaus, H.; Bach, H.-G.; Bauer, S.; Beling, A.; Heidrich, H.; Hoffman, D.; Hüttl, B.; Kaiser, R.; Kreissl, J.; Mekonnen, G. G.; Möhrle, M.; Rehbein, W.; Sartorius, B.; Velthaus, K.-O.

    2005-09-01

    Recent development trends in InP-based optoelectronic devices are illustrated by means of selected examples. These include lasers for uncooled operation and direct modulation at 10 Gbit/s, complex-coupled lasers, which exhibit particularly low sensitivity to back reflections as well as monolithic mode-locked semiconductor lasers as ps-pulse sources for OTDM applications. Furthermore, a Mach-Zehnder interferometer modulator for high bit rate applications (40 Gbit/s and beyond) is described, and finally, photoreceivers and ultra high-speed waveguide-integrated photodiodes with > 100 GHz bandwidth are presented, which are key component for high bit rate systems, advanced modulation format transmission links, and for high speed measurement equipment as well.

  2. Multirhythmicity in an optoelectronic oscillator with large delay

    NASA Astrophysics Data System (ADS)

    Weicker, Lionel; Erneux, Thomas; Rosin, David P.; Gauthier, Daniel J.

    2015-01-01

    An optoelectronic oscillator exhibiting a large delay in its feedback loop is studied both experimentally and theoretically. We show that multiple square-wave oscillations may coexist for the same values of the parameters (multirhythmicity). Depending on the sign of the phase shift, these regimes admit either periods close to an integer fraction of the delay or periods close to an odd integer fraction of twice the delay. These periodic solutions emerge from successive Hopf bifurcation points and stabilize at a finite amplitude following a scenario similar to Eckhaus instability in spatially extended systems. We find quantitative agreements between experiments and numerical simulations. The linear stability of the square waves is substantiated analytically by determining the stable fixed points of a map.

  3. An optoelectronic connectionist machine utilizing liquid crystal spatial light modulators

    SciTech Connect

    Bigner, J.; Zhang, L.; Cotter, L.K.; Johnson, K.M.

    1988-09-01

    The significant feature of neural-like networks is their highly interconnected architectures. In principle, optical implementations of these networks have an advantage over electronics because they can exploit a third dimension for interconnecting processing elements. Experimental demonstrations of optical neurocomputers include those using planar and volume and spatial light modulators. The former has the advantage of implementing large sized networks, but with much less control over the value of individual connection weights as compared to spatial light modulator based systems. In this paper the authors present experimental results on a liquid crystal spatial light modulator (SLM) based neural-like netowrk. This optoelectronic network, as shown schematically in figure 1, uses liquid crystal SLM's for the input and connection weight matricies. The system is interfaced with a computer to provide electronic feedback and control of the individual weights.

  4. Injectable, Cellular-Scale Optoelectronics with Applications for Wireless Optogenetics

    NASA Astrophysics Data System (ADS)

    Kim, Tae-il; McCall, Jordan G.; Jung, Yei Hwan; Huang, Xian; Siuda, Edward R.; Li, Yuhang; Song, Jizhou; Song, Young Min; Pao, Hsuan An; Kim, Rak-Hwan; Lu, Chaofeng; Lee, Sung Dan; Song, Il-Sun; Shin, GunChul; Al-Hasani, Ream; Kim, Stanley; Tan, Meng Peun; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.; Bruchas, Michael R.

    2013-04-01

    Successful integration of advanced semiconductor devices with biological systems will accelerate basic scientific discoveries and their translation into clinical technologies. In neuroscience generally, and in optogenetics in particular, the ability to insert light sources, detectors, sensors, and other components into precise locations of the deep brain yields versatile and important capabilities. Here, we introduce an injectable class of cellular-scale optoelectronics that offers such features, with examples of unmatched operational modes in optogenetics, including completely wireless and programmed complex behavioral control over freely moving animals. The ability of these ultrathin, mechanically compliant, biocompatible devices to afford minimally invasive operation in the soft tissues of the mammalian brain foreshadow applications in other organ systems, with potential for broad utility in biomedical science and engineering.

  5. Prototype Focal-Plane-Array Optoelectronic Image Processor

    NASA Technical Reports Server (NTRS)

    Fang, Wai-Chi; Shaw, Timothy; Yu, Jeffrey

    1995-01-01

    Prototype very-large-scale integrated (VLSI) planar array of optoelectronic processing elements combines speed of optical input and output with flexibility of reconfiguration (programmability) of electronic processing medium. Basic concept of processor described in "Optical-Input, Optical-Output Morphological Processor" (NPO-18174). Performs binary operations on binary (black and white) images. Each processing element corresponds to one picture element of image and located at that picture element. Includes input-plane photodetector in form of parasitic phototransistor part of processing circuit. Output of each processing circuit used to modulate one picture element in output-plane liquid-crystal display device. Intended to implement morphological processing algorithms that transform image into set of features suitable for high-level processing; e.g., recognition.

  6. Scanning tunneling microscopy studies of diamond films and optoelectronic materials

    NASA Technical Reports Server (NTRS)

    Perez, Jose M.

    1993-01-01

    In this report, we report on progress achieved from 12/1/92 to 10/1/93 under the grant entitled 'Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials'. We have set-up a chemical vapor deposition (CVD) diamond film growth system and a Raman spectroscopy system to study the nucleation and growth of diamond films with atomic resolution using scanning tunneling microscopy (STM). A unique feature of the diamond film growth system is that diamond films can be transferred directly to the ultrahigh vacuum (UHV) chamber of a scanning tunneling microscope without contaminating the films by exposure to air. The University of North Texas (UNT) provided $20,000 this year as matching funds for the NASA grant to purchase the diamond growth system. In addition, UNT provided a Coherent Innova 90S Argon ion laser, a Spex 1404 double spectrometer, and a Newport optical table costing $90,000 to set-up the Raman spectroscopy system. The CVD diamond growth system and Raman spectroscopy system will be used to grow and characterize diamond films with atomic resolution using STM as described in our proposal. One full-time graduate student and one full-time undergraduate student are supported under this grant. In addition, several graduate and undergraduate students were supported during the summer to assist in setting-up the diamond growth and Raman spectroscopy systems. We have obtained research results concerning STM of the structural and electronic properties of CVD grown diamond films, and STM and scanning tunneling spectroscopy of carbon nanotubes. In collaboration with the transmission electron microscopy (TEM) group at UNT, we have also obtained results concerning the optoelectronic material siloxene. These results were published in refereed scientific journals, submitted for publication, and presented as invited and contributed talks at scientific conferences.

  7. Communications with chaotic optoelectronic systems cryptography and multiplexing

    NASA Astrophysics Data System (ADS)

    Rontani, Damien

    With the rapid development of optical communications and the increasing amount of data exchanged, it has become utterly important to provide effective architectures to protect sensitive data. The use of chaotic optoelectronic devices has already demonstrated great potential in terms of additional computational security at the physical layer of the optical network. However, the determination of the security level and the lack of a multi-user framework are two hurdles which have prevented their deployment on a large scale. In this thesis, we propose to address these two issues. First, we investigate the security of a widely used chaotic generator, the external cavity semiconductor laser (ECSL). This is a time-delay system known for providing complex and high-dimensional chaos, but with a low level of security regarding the identification of its most critical parameter, the time delay. We perform a detailed analysis of the in uence of the ECSL parameters to devise how higher levels of security can be achieved and provide a physical interpretation of their origin. Second, we devise new architectures to multiplex optical chaotic signals and realize multi-user communications at high bit rates. We propose two different approaches exploiting known chaotic optoelectronic devices. The first one uses mutually coupled ECSL and extends typical chaos-based encryption strategies, such as chaos-shift keying (CSK) and chaos modulation (CMo). The second one uses an electro-optical oscillator (EOO) with multiple delayed feedback loops and aims first at transposing coded-division multiple access (CDMA) and then at developing novel strategies of encryption and decryption, when the time-delays of each feedback loop are time-dependent.

  8. Nanostructure-based optoelectronic sensing of vapor phase explosives--a promising but challenging method.

    PubMed

    Zu, Baiyi; Guo, Yanan; Dou, Xincun

    2013-11-21

    Optoelectronic sensing of gas phase hazardous chemicals is a newly explored field, which shows great advantages towards low concentration sensing when compared to normal gas sensing in the dark. Here, based on the recent progress on nanostructured vapor phase explosive gas sensors operated in dark conditions, the attractiveness of developing optoelectronic sensors for vapor phase explosive detection was highlighted. Furthermore, we try to propose some new insights to enhance optoelectronic sensing of vapor phase explosives. We suggest employing photocatalysis principles to enhance the sensitivity and employing a molecular imprinting technique (MIT) to enhance the selectivity.

  9. Progress in the optoelectronic analog signal transfer for high energy particle detectors

    SciTech Connect

    Tsang, T.; Radeka, V.

    1992-05-01

    We report the progress in the development of a radiation hard Optoelectronic analog system to transfer particle detector signals with high accuracy. We will present the motivation of this study, the operating principle of the optoelectronic system, the system noise study, the recent R D efforts on radiation effect, temperature stability, and the realization of an integrated l {times} l6 optical modulator. The issue of photon source for driving such a large-scale optoelectronic modulators is a major concern. We will address this problem by examining different possible photon sources and comment on other possible alternative for signal transfer.

  10. Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.

    PubMed

    Jariwala, Deep; Davoyan, Artur R; Tagliabue, Giulia; Sherrott, Michelle C; Wong, Joeson; Atwater, Harry A

    2016-09-14

    We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

  11. Cellular interconnects optimization algorithm for optoelectronic single-instruction multiple data.

    PubMed

    Hoanca, B; Sawchuk, A A

    1998-02-10

    We present a novel algorithm for designing optimal cellular interconnects (OCI's), which can significantly accelerate the communications among processors in single-instruction multiple-data machines with optoelectronic interconnections. We present the foundations of the OCI architecture and show that the optoelectronic OCI is the optimal topology for a space-invariant interconnect pattern. The OCI is optimal in achieving a minimum number of clock cycles per data shift for a given number of optoelectronic links. In addition, our algorithm for designing the OCI is deterministic, whereas previous designs required a trial-and-error procedure.

  12. Modeling and optoelectronic realization of an artificial cortex

    NASA Astrophysics Data System (ADS)

    Pashaie, Ramin

    codes and cortical topological computational maps. Next step in this research is seeking suitable enabling technologies, such as electronics and optics, for hardware implementation of these cortical models. It is a general consensus that realization of parallelism and massive interconnections can be done far better in optics compared to electronics. Nevertheless, one can exploit optoelectronic methodologies that combine the benefits of optics with flexibilities of electronics. An innovative optoelectronic approach is taking advantage of the optical mechanism of a special type of stimulable storage phosphor, the so called electron trapping materials. Our analytical modelings and experimental works reveal that the equilibrium state luminescence of this material can be controlled to generate a variety of different nonlinear behaviors including quasi-quadratic responses that can be used for generation of quadratic return maps. Combining this versatility with the state-of-the-art high speed spatial light modulators and CCD cameras, large arrays of quadratic return maps can be accommodated in a thin film of electron trapping material. Another approach which is investigated in this dissertation is based on using the recently developed digital microelectromechanic spatial light modulators. These modulators can control the exposure precisely. We show that a closed loop of such a spatial light modulator and a CCD camera can be used to build an optoelectronic machine suitable for parallel recursive computations similar to our cortical models.

  13. Oxide semiconductors for organic opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Sigdel, Ajaya K.

    In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the

  14. Surface directed assembly of conjugated polymers for optoelectronics

    NASA Astrophysics Data System (ADS)

    Liang, Ziqi

    Conjugated polymers combining the optical and electronic properties of semiconductors with advantages of organic materials are being explored as active components in various types of thin-film electronic and optoelectronic devices. The realization of conjugated polymer based electronics and optoelectronics critically depends on developing novel approaches for assembling this new class of materials into a controlled fashion. We have developed new non-photolithographic methods for the spatial deposition of conjugated polymers. As a proof-of-concept of these methods, the well-known luminescent polymer, poly(p-phenylene vinylene) (PPV), has been used as a model structure in our work. One strategy is based on the modification of solid substrates with microcontact-printed self-assembled monolayers (SAMs) that serve as templates for the deposition of PPVs from solution. Conjugated polymer patterns have also been generated by directly stamping of PPVs onto the reactive SAMs-coated substrates. In both methods, PPVs were covalently immobilized onto the supporting surface through the formation of amide bonds, thus rendering great stability of the resulting patterns. Well-defined PPV micropatterns have been fully characterized by UV-vis spectroscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM) and fluorescence optical microscopy. The interaction between PPVs and the underlying surface was analyzed by grazing-angle reflectance Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS). Many applications based on conjugated polymers require the controlled assembly of the polymers as multilayer structures, in which molecules with different functionality can be incorporated into individual layers with precisely controlled thickness. We have developed a series of layer-by-layer (LbL) assembly approaches to multilayer conjugated polymer thin films. Hydrogen-bonding interaction and covalent coupling reaction have been utilized

  15. High throughput optoelectronic smart pixel systems using diffractive optics

    NASA Astrophysics Data System (ADS)

    Chen, Chih-Hao

    1999-12-01

    Recent developments in digital video, multimedia technology and data networks have greatly increased the demand for high bandwidth communication channels and high throughput data processing. Electronics is particularly suited for switching, amplification and logic functions, while optics is more suitable for interconnections and communications with lower energy and crosstalk. In this research, we present the design, testing, integration and demonstration of several optoelectronic smart pixel devices and system architectures. These systems integrate electronic switching/processing capability with parallel optical interconnections to provide high throughput network communication and pipeline data processing. The Smart Pixel Array Cellular Logic processor (SPARCL) is designed in 0.8 m m CMOS and hybrid integrated with Multiple-Quantum-Well (MQW) devices for pipeline image processing. The Smart Pixel Network Interface (SAPIENT) is designed in 0.6 m m GaAs and monolithically integrated with LEDs to implement a highly parallel optical interconnection network. The Translucent Smart Pixel Array (TRANSPAR) design is implemented in two different versions. The first version, TRANSPAR-MQW, is designed in 0.5 m m CMOS and flip-chip integrated with MQW devices to provide 2-D pipeline processing and translucent networking using the Carrier- Sense-MultipleAccess/Collision-Detection (CSMA/CD) protocol. The other version, TRANSPAR-VM, is designed in 1.2 m m CMOS and discretely integrated with VCSEL-MSM (Vertical-Cavity-Surface- Emitting-Laser and Metal-Semiconductor-Metal detectors) chips and driver/receiver chips on a printed circuit board. The TRANSPAR-VM provides an option of using the token ring network protocol in addition to the embedded functions of TRANSPAR-MQW. These optoelectronic smart pixel systems also require micro-optics devices to provide high resolution, high quality optical interconnections and external source arrays. In this research, we describe an innovative

  16. Programmable Optoelectronic Multiprocessors: Design, Performance and CAD Development

    NASA Astrophysics Data System (ADS)

    Kiamilev, Fouad Eskender

    1992-01-01

    This thesis describes the development of Programmable Optoelectronic Multiprocessor (POEM) architectures and systems. POEM systems combine simple electronic processing elements with free-space optical interconnects to implement high-performance, massively-parallel computers. POEM architectures are fundamentally different from architectures used in conventional VLSI systems. Novel system partitioning and processing element design methods have been developed to ensure efficient implementation of POEM architectures with optoelectronic technology. The main contributions of this thesis are: architecture and software design for the POEM prototype built at UCSD; detailed technology design-tradeoff and comparison studies for POEM interconnection networks; and application of the VHSIC Hardware Description Language (VHDL) to the design, simulation, and synthesis of POEM computers. A general-purpose POEM SIMD parallel computer architecture has been designed for symbolic computing applications. A VHDL simulation of this architecture was written to test the POEM hardware running parallel programs prior to prototype fabrication. Detailed performance comparison of this architecture with all-optical computing, based on symbolic substitution, has also been carried out to show that POEMs offer higher computational efficiency. A detailed technological design of a packet-switched POEM multistage interconnection network system has been performed. This design uses optically interconnected stages of K x K electronic switching elements, where K is a variable parameter, called grain-size, that determines the ratio of optics to electronics in the system. A thorough cost and performance comparison between this design and existing VLSI implementations was undertaken to show that the POEM approach offers better scalability and higher performance. The grain-size was optimized, showing that switch sizes of 16 x 16 to 256 x 256 provide maximum performance/cost. The effects of varying

  17. Middle infrared optoelectronic absorption systems for monitoring physiological glucose solutions

    NASA Astrophysics Data System (ADS)

    Martin, W. Blake

    Tight monitoring of the glucose levels for diabetic individuals is essential to control long-term complications. A definitive diabetes management system has yet to be developed for the diabetic. This research investigates the application of middle infrared absorption frequencies for monitoring glucose levels in biological solutions. Three frequencies were identified using a Fourier transform infrared spectrometer and correlated to changes in glucose concentrations. The 1035 +/- 1 cm-1 frequency was determined to be the best representative frequency. Other biological molecules contributed no significant interference to monitoring glucose absorption. A second frequency at 1193 cm-1 was suggested as a representative background absorption frequency, which could be used for more accurate glucose absorption values. Next, a quantum cascade laser optoelectronic absorption system was designed and developed to monitor glucose. After careful alignment and design, the system was used to monitor physiological glucose concentrations. Correlation at 1036 cm-1 with glucose changes was comparable to the previous results. The use of the background absorption frequency was verified. This frequency essentially acts as a calibrating frequency to adjust in real-time to any changes in the background absorption that may alter the accuracy of the predicted glucose value. An evanescent wave cavity ring-down spectroscopy technique was explored to monitor molecules in a biological solution. Visible light at 425 nm was used to monitor hemoglobin in control urine samples. An adsorption isotherm for hemoglobin was detectable to limit of 5.8 nM. Evanescent wave cavity ring-down spectroscopy would be useful for a glucose solution. Given an equivalent system designed for the middle infrared, the molar extinction coefficient of glucose allows for a detectable limit of 45 mg/dl for a free-floating glucose solution, which is below normal physiological concentrations. The future use of a hydrophobic

  18. Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.

    PubMed

    Li, Dong; Wang, Biao; Chen, Mingyuan; Zhou, Jun; Zhang, Zengxing

    2017-06-01

    p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe2 ) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe2 enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe2 heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Synthesis, structure, and optoelectronic properties of II-IV-V2 materials

    DOE PAGES

    Martinez, Aaron D.; Fioretti, Angela N.; Toberer, Eric S.; ...

    2017-03-07

    II-IV-V2 materials offer the promise of enhanced functionality in optoelectronic devices due to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic devices based on nitride, phosphide, and arsenide II-IV-V2 materials. As ternary analogs to the III-V materials, these compounds share many of the attractive features that have made the III-Vs the basis of modern optoelectronic devices (e.g. high mobility, strong optical absorption). Control of cation order parameter in the II-IV-V2 materials can produce significant changes in optoelectronic properties at fixed chemical composition, including decoupling band gap from lattice parameter. Recent progress has begun tomore » resolve outstanding questions concerning the structure, dopability, and optical properties of the II-IV-V2 materials. Furthermore, remaining research challenges include growth optimization and integration into heterostructures and devices.« less

  20. Design of optical metamaterial mirror with metallic nanoparticles for floating-gate graphene optoelectronic devices.

    PubMed

    Lee, Seungwoo; Kim, Juyoung

    2015-08-24

    The purpose of this work is to conceive the idea for using the gate dielectrics of floating-gate memory device (i.e., Au nanoparticle (AuNP) monolayer embedded within polymeric matrix) as a magnetic mirror, so as to harness the broadband light absorption of thin film optoelectronics. In particular, we systematically examined whether the versatile assembly of spherical AuNP monolayer can be indeed treated as the effective magnetic mirror for floating-gate graphene optoelectronic device. High amenability of the AuNP assembly with the large-area device fabrication procedures may make this strategy widely applicable to various thin film optoelectronic devices. Our study thereby advances the design of mirror for thin film optoelectronics.

  1. 78 FR 16296 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-14

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... optic communications, components thereof, and products containing the same by reason of infringement of...

  2. EDFA-based coupled opto-electronic oscillator and its phase noise

    NASA Technical Reports Server (NTRS)

    Salik, Ertan; Yu, Nan; Tu, Meirong; Maleki, Lute

    2004-01-01

    EDFA-based coupled opto-electronic oscillator (COEO), an integrated optical and microwave oscillator that can generate picosecond optical pulses, is presented. the phase noise measurements of COEO show better performance than synthesizer-driven mode-locked laser.

  3. One-dimensional CdS nanostructures: a promising candidate for optoelectronics.

    PubMed

    Li, Huiqiao; Wang, Xi; Xu, Junqi; Zhang, Qi; Bando, Yoshio; Golberg, Dmitri; Ma, Ying; Zhai, Tianyou

    2013-06-11

    As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted.

  4. 25th anniversary article: carbon nanotube- and graphene-based transparent conductive films for optoelectronic devices.

    PubMed

    Du, Jinhong; Pei, Songfeng; Ma, Laipeng; Cheng, Hui-Ming

    2014-04-02

    Carbon nanotube (CNT)- and graphene (G)-based transparent conductive films (TCFs) are two promising alternatives for commonly-used indium tin oxide-based TCFs for future flexible optoelectronic devices. This review comprehensively summarizes recent progress in the fabrication, properties, modification, patterning, and integration of CNT- and G-TCFs into optoelectronic devices. Their potential applications and challenges in optoelectronic devices, such as organic photovoltaic cells, organic light emitting diodes and touch panels, are discussed in detail. More importantly, their key characteristics and advantages for use in these devices are compared. Despite many challenges, CNT- and G-TCFs have demonstrated great potential in various optoelectronic devices and have already been used for some products like touch panels of smartphones. This illustrates the significant opportunities for the industrial use of CNTs and graphene, and hence pushes nanoscience and nanotechnology one step towards practical applications.

  5. Optoelectronic mixing on CVD graphene up to 30 Gigahertz: analysis at high electrostatic doping

    NASA Astrophysics Data System (ADS)

    Montanaro, A.; Mzali, S.; Mazellier, J.-P.; Molin, S.; Larat, C.; Bezencenet, O.; Legagneux, P.

    2016-09-01

    Due to its remarkable properties, graphene-based devices are particularly promising for optoelectronic applications. Thanks to its compatibility with standard silicon technology, graphene could compete III-V compounds for the development of low cost and high-frequency optoelectronic devices. We present a new optoelectronic device that consists in a coplanar waveguide integrating a commercially-available CVD graphene active channel. With this structure, we demonstrate high-frequency (30 GHz) broadband optoelectronic mixing in graphene, by measuring the response of the device to an optical intensity-modulated excitation and an electrical excitation at the same time. These features are particularly promising for RADAR and LIDAR applications, as well as for low-cost high-speed communication systems.

  6. Study of Opto-electronic Properties of a Single Microtubule in the Microwave Regime

    DTIC Science & Technology

    2013-01-09

    Annual Report for AOARD Grant FA2386-11-1-0001 “Research Title” Study of opto-electronic properties of a single microtubule in the microwave regime...SUBTITLE Study of opto-electronic properties of a single microtubule in the microwave regime 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM...signature [porcine (brain neuron), human (MCF 7 active breast cancer cell), fungi 26 (Agaricus bisporus mashroom,) and plant (six days old soybean

  7. Study of optoelectronic switch for satellite-switched time-division multiple access

    NASA Technical Reports Server (NTRS)

    Su, Shing-Fong; Jou, Liz; Lenart, Joe

    1987-01-01

    The use of optoelectronic switching for satellite switched time division multiple access will improve the isolation and reduce the crosstalk of an IF switch matrix. The results are presented of a study on optoelectronic switching. Tasks include literature search, system requirements study, candidate switching architecture analysis, and switch model optimization. The results show that the power divided and crossbar switching architectures are good candidates for an IF switch matrix.

  8. CMOS-based opto-electronic neural interface devices for optogenetics.

    PubMed

    Tokuda, Takashi; Noguchi, Satoki; Iwasaki, Satoru; Takehara, Hiroaki; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

    2016-08-01

    CMOS-based opto-electronic neural interface devices are presented. The devices are designed with target application of in vitro and in vivo optogenetics. Two types of the opto-electronic neural interface devices are presented. One is single-chip type device for on-chip optogenetics, and the other is multi-chip type device with flexibility and wide-area coverage for in vivo optogenetics on brain. Design, packaging and functional evaluations are presented.

  9. Metamorphic InAsSb/AlInAsSb Heterostructures for Optoelectronic Applications

    DTIC Science & Technology

    2013-03-20

    REPORT Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: Metamorphic ...TELEPHONE NUMBER Gregory Belenky 631-632-8397 3. DATES COVERED (From - To) Standard Form 298 (Rev 8/98) Prescribed by ANSI Std. Z39.18 - Metamorphic InAsSb...AlInAsSb heterostructures for optoelectronic applications Report Title ABSTRACT Metamorphic heterostructures containing bulk InAs1?xSbx layers and

  10. A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage

    NASA Astrophysics Data System (ADS)

    Chang, C. Y.; Choi, Daeyoung; Locquet, A.; Wishon, Michael J.; Merghem, K.; Ramdane, Abderrahim; Lelarge, François; Martinez, A.; Citrin, D. S.

    2016-05-01

    A multi-GHz chaotic optoelectronic oscillator based on an external cavity semiconductor laser (ECL) is demonstrated. Unlike the standard optoelectronic oscillators for microwave applications, we do not employ the dynamic light output incident on a photodiode to generate the microwave signal, but instead generate the microwave signal directly by measuring the terminal voltage V(t) of the laser diode of the ECL under constant-current operation, thus obviating the photodiode entirely.

  11. A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage

    SciTech Connect

    Chang, C. Y.; Choi, Daeyoung; Locquet, A. Wishon, Michael J.; Citrin, D. S.; Merghem, K.; Ramdane, Abderrahim; Martinez, A.; Lelarge, François

    2016-05-09

    A multi-GHz chaotic optoelectronic oscillator based on an external cavity semiconductor laser (ECL) is demonstrated. Unlike the standard optoelectronic oscillators for microwave applications, we do not employ the dynamic light output incident on a photodiode to generate the microwave signal, but instead generate the microwave signal directly by measuring the terminal voltage V(t) of the laser diode of the ECL under constant-current operation, thus obviating the photodiode entirely.

  12. New Schemes for Improved Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Yao, Steve; Ji, Yu; Ilchenko, Vladimir

    2000-01-01

    The opto-Electronic Oscillator (OEO) has already demonstrated superior spectral purity as a for microwave and millimeter wave reference signals. Experimental results have produced a performance characterized by noise as low as -50 dBc/Hz at 10 Hz and -140 dBc/Hz for a 10 GHz oscillator. This performance is significant because it was produced by an oscillator that was free running. Since the noise in an OEO is independent of the oscillation frequency, the same performance may also be obtained at higher frequency. The recent work in our laboratory has been focused in three areas: 1) realization of a compact OEO based on semiconductor lasers and modulators, 2) reduction of the close-to-carrier noise of the OEO originating from the 1/f noise of the amplifier, and 3) miniaturization of the OEO. In this paper we report on progress made in these areas, and describe future plans to increase the performance and the efficiency of the OEO.

  13. Technical quality assessment of an optoelectronic system for movement analysis

    NASA Astrophysics Data System (ADS)

    Di Marco, R.; Rossi, S.; Patanè, F.; Cappa, P.

    2015-02-01

    The Optoelectronic Systems (OS) are largely used in gait analysis to evaluate the motor performances of healthy subjects and patients. The accuracy of marker trajectories reconstruction depends on several aspects: the number of cameras, the dimension and position of the calibration volume, and the chosen calibration procedure. In this paper we propose a methodology to evaluate the effects of the mentioned sources of error on the reconstruction of marker trajectories. The novel contribution of the present work consists in the dimension of the tested calibration volumes, which is comparable with the ones normally used in gait analysis; in addition, to simulate trajectories during clinical gait analysis, we provide non-default paths for markers as inputs. Several calibration procedures are implemented and the same trial is processed with each calibration file, also considering different cameras configurations. The RMSEs between the measured trajectories and the optimal ones are calculated for each comparison. To investigate the significant differences between the computed indices, an ANOVA analysis is implemented. The RMSE is sensible to the variations of the considered calibration volume and the camera configurations and it is always inferior to 43 mm.

  14. Optoelectronics of supported and suspended 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Bolotin, Kirill

    2014-03-01

    Two-dimensional semiconductors, materials such monolayer molybdenum disulfide (MoS2) are characterized by strong spin-orbit and electron-electron interactions. However, both electronic and optoelectronic properties of these materials are dominated by disorder-related scattering. In this talk, we investigate approaches to reduce scattering and explore physical phenomena arising in intrinsic 2D semiconductors. First, we discuss fabrication of pristine suspended monolayer MoS2 and use photocurrent spectroscopy measurements to study excitons in this material. We observe band-edge and van Hove singularity excitons and estimate their binding energies. Furthermore, we study dissociation of these excitons and uncover the mechanism of their contribution to photoresponse of MoS2. Second, we study strain-induced modification of bandstructures of 2D semiconductors. With increasing strain, we find large and controllable band gap reduction of both single- and bi-layer MoS2. We also detect experimental signatures consistent with strain-induced transition from direct to indirect band gap in monolayer MoS2. Finally, we fabricate heterostructures of dissimilar 2D semiconductors and study their photoresponse. For closely spaced 2D semiconductors we detect charge transfer, while for separation larger than 10nm we observe Forster-like energy transfer between excitations in different layers.

  15. Novel optoelectronic devices based on single semiconductor nanowires (nanobelts).

    PubMed

    Ye, Yu; Dai, Lun; Gan, Lin; Meng, Hu; Dai, Yu; Guo, Xuefeng; Qin, Guogang

    2012-04-13

    Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal-semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors, the MESFET-based photodetector can make a balance among overall performance parameters, which is desired for practical device applications. We also present our recent work on graphene nanoribbon/semiconductor NW (SNW) heterojunction light-emitting diodes (LEDs). Herein, by taking advantage of both graphene and SNWs, we have fabricated, for the first time, the graphene-based nano-LEDs. This achievement opens a new avenue for developing graphene-based nano-electroluminescence devices. Moreover, the novel graphene/SNW hybrid devices can also find use in other applications, such as high-sensitivity sensor and transparent flexible devices in the future.

  16. Fluorescence particle detection using microfluidics and planar optoelectronic elements

    NASA Astrophysics Data System (ADS)

    Kettlitz, Siegfried W.; Moosmann, Carola; Valouch, Sebastian; Lemmer, Uli

    2014-05-01

    Detection of fluorescent particles is an integral part of flow cytometry for analysis of selectively stained cells. Established flow cytometer designs achieve great sensitivity and throughput but require bulky and expensive components which prohibit mass production of small single-use point-of-care devices. The use of a combination of innovative technologies such as roll-to-roll printed microuidics with integrated optoelectronic components such as printed organic light emitting diodes and printed organic photodiodes enables tremendous opportunities in cost reduction, miniaturization and new application areas. In order to harvest these benefits, the optical setup requires a redesign to eliminate the need for lenses, dichroic mirrors and lasers. We investigate the influence of geometric parameters on the performance of a thin planar design which uses a high power LED as planar light source and a PIN-photodiode as planar detector. Due to the lack of focusing optics and inferior optical filters, the device sensitivity is not yet on par with commercial state of the art flow cytometer setups. From noise measurements, electronic and optical considerations we deduce possible pathways of improving the device performance. We identify that the sensitivity is either limited by dark noise for very short apertures or by noise from background light for long apertures. We calculate the corresponding crossover length. For the device design we conclude that a low device thickness, low particle velocity and short aperture length are necessary to obtain optimal sensitivity.

  17. Miniaturized optoelectronic system for telemetry of in vivo voltammetric signals.

    PubMed

    De Simoni, M G; De Luigi, A; Imeri, L; Algeri, S

    1990-08-01

    In vivo voltammetry is an electrochemical technique that uses carbon fiber microelectrodes stereotaxically implanted in brain areas to monitor monoamine metabolism and release continuously, in freely moving animals. Electric wires connect the polarograph to the animal. A wire-less transmission system (optoelectronic transmission, OPT) of voltammetric signals is described here. It uses infrared diffused light, exploiting the diffusion of the transmitted light over walls and ceiling towards a receiver. The transmission system consists of a main unit and a satellite unit (40 x 30 x 5 mm) positioned on the animal's back. Voltammetric recordings obtained by the classical system (with wires) and by OPT are well defined and almost identical in shape. The power supply is provided by two thin lithium batteries (+/- 3V) that can record for up to 20 h. OPT permits detailed behavioral observations since the animal can be left free to move in a spacious environment. Voltammetry using OPT allows simultaneous recording of neuronal firing activity as well as electroencephalographic recordings (EEG) since there is no cross-talk between the circuits used. The results illustrate the reliability and usefulness of this wire-less transmission system for studying relationships between neurochemical, behavioral and electrophysiological activities.

  18. Toward silicon-based longwave integrated optoelectronics (LIO)

    NASA Astrophysics Data System (ADS)

    Soref, Richard

    2008-02-01

    The vision of longwave silicon photonics articulated in the Journal of Optics A, vol. 8, pp 840-848, 2006 has now come into sharper focus. There is evidence that newly designed silicon-based optoelectronic circuits will operate at any wavelength within the wide 1.6 to 200 μm range. Approaches to that LWIR operation are reviewed here. A long-range goal is to manufacture LWIR OEIC chips in a silicon foundry by integrating photonics on-chip with CMOS, bipolar, or BiCMOS micro-electronics. A principal LWIR application now emerging is the sensing of chemical and biological agents with an OE laboratory-on-a-chip. Regarding on-chip IR sources, the hybrid evanescent-wave integration of III-V interband-cascade lasers and quantum-cascade lasers on silicon (or Ge/Si) waveguides is a promising technique, although an alternative all-group-IV solution is presently taking shape in the form of silicon-based Ge/SiGeSn band-to-band and inter-subband lasers. There is plenty of room for creativity in developing a complete suite of LWIR components. Materials modification, device innovation, and scaling of waveguide dimensions are needed to implement microphotonic, plasmonic and photonic-crystal LWIR devices, both active and passive. Such innovation will likely lead to significant LIO applications.

  19. Manipulating and assembling metallic beads with Optoelectronic Tweezers

    NASA Astrophysics Data System (ADS)

    Zhang, Shuailong; Juvert, Joan; Cooper, Jonathan M.; Neale, Steven L.

    2016-09-01

    Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been developed as a micromanipulation technology for controlling micro- and nano-particles with applications such as cell sorting and studying cell communications. Additionally, the capability of moving small objects accurately and assembling them into arbitrary 2D patterns also makes OET an attractive technology for microfabrication applications. In this work, we demonstrated the use of OET to manipulate conductive silver-coated Poly(methyl methacrylate) (PMMA) microspheres (50 μm diameter) into tailored patterns. It was found that the microspheres could be moved at a max velocity of 3200 μm/s, corresponding to 4.2 nano-newton (10‑9 N) DEP force, and also could be positioned with high accuracy via this DEP force. The underlying mechanism for this strong DEP force is shown by our simulations to be caused by a significant increase of the electric field close to the particles, due to the interaction between the field and the silver shells coating the microspheres. The associated increase in electrical gradient causes DEP forces that are much stronger than any previously reported for an OET device, which facilitates manipulation of the metallic microspheres efficiently without compromise in positioning accuracy and is important for applications on electronic component assembling and circuit construction.

  20. MOF-based electronic and opto-electronic devices.

    PubMed

    Stavila, V; Talin, A A; Allendorf, M D

    2014-08-21

    Metal-organic frameworks (MOFs) are a class of hybrid materials with unique optical and electronic properties arising from rational self-assembly of the organic linkers and metal ions/clusters, yielding myriads of possible structural motifs. The combination of order and chemical tunability, coupled with good environmental stability of MOFs, are prompting many research groups to explore the possibility of incorporating these materials as active components in devices such as solar cells, photodetectors, radiation detectors, and chemical sensors. Although this field is only in its incipiency, many new fundamental insights relevant to integrating MOFs with such devices have already been gained. In this review, we focus our attention on the basic requirements and structural elements needed to fabricate MOF-based devices and summarize the current state of MOF research in the area of electronic, opto-electronic and sensor devices. We summarize various approaches to designing active MOFs, creation of hybrid material systems combining MOFs with other materials, and assembly and integration of MOFs with device hardware. Critical directions of future research are identified, with emphasis on achieving the desired MOF functionality in a device and establishing the structure-property relationships to identify and rationalize the factors that impact device performance.

  1. Manipulating and assembling metallic beads with Optoelectronic Tweezers

    PubMed Central

    Zhang, Shuailong; Juvert, Joan; Cooper, Jonathan M.; Neale, Steven L.

    2016-01-01

    Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been developed as a micromanipulation technology for controlling micro- and nano-particles with applications such as cell sorting and studying cell communications. Additionally, the capability of moving small objects accurately and assembling them into arbitrary 2D patterns also makes OET an attractive technology for microfabrication applications. In this work, we demonstrated the use of OET to manipulate conductive silver-coated Poly(methyl methacrylate) (PMMA) microspheres (50 μm diameter) into tailored patterns. It was found that the microspheres could be moved at a max velocity of 3200 μm/s, corresponding to 4.2 nano-newton (10−9 N) DEP force, and also could be positioned with high accuracy via this DEP force. The underlying mechanism for this strong DEP force is shown by our simulations to be caused by a significant increase of the electric field close to the particles, due to the interaction between the field and the silver shells coating the microspheres. The associated increase in electrical gradient causes DEP forces that are much stronger than any previously reported for an OET device, which facilitates manipulation of the metallic microspheres efficiently without compromise in positioning accuracy and is important for applications on electronic component assembling and circuit construction. PMID:27599445

  2. Multilevel organization in hybrid thin films for optoelectronic applications.

    PubMed

    Vohra, Varun; Bolognesi, Alberto; Calzaferri, Gion; Botta, Chiara

    2009-10-20

    In this work we report two simple approaches to prepare hybrid thin films displaying a high concentration of zeolite crystals that could be used as active layers in optoelectronic devices. In the first approach, in order to organize nanodimensional zeolite crystals of 40 nm diameter in an electroactive environment, we chemically modify their external surface and play on the hydrophilic/hydrophobic forces. We obtain inorganic nanocrystals that self-organize in honeycomb electroluminescent polymer structures obtained by breath figure formation. The different functionalizations of the zeolite surface result in different organizations inside the cavities of the polymeric structure. The second approach involving soft-litography techniques allows one to arrange single dye-loaded zeolite L crystals of 800 nm of length by mechanical loading into the nanocavities of a conjugated polymer. Both techniques result in the formation of thin hybrid films displaying three levels of organization: organization of the dye molecules inside the zeolite nanochannels, organization of the zeolite crystals inside the polymer cavities, and micro- or nanostructuration of the polymer.

  3. Electronic and optoelectronic materials and devices inspired by nature

    NASA Astrophysics Data System (ADS)

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  4. Design of a high-resolution optoelectronic retinal prosthesis.

    PubMed

    Palanker, Daniel; Vankov, Alexander; Huie, Phil; Baccus, Stephen

    2005-03-01

    It has been demonstrated that electrical stimulation of the retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. However, current retinal implants provide very low resolution (just a few electrodes), whereas at least several thousand pixels would be required for functional restoration of sight. This paper presents the design of an optoelectronic retinal prosthetic system with a stimulating pixel density of up to 2500 pix mm(-2) (corresponding geometrically to a maximum visual acuity of 20/80). Requirements on proximity of neural cells to the stimulation electrodes are described as a function of the desired resolution. Two basic geometries of sub-retinal implants providing required proximity are presented: perforated membranes and protruding electrode arrays. To provide for natural eye scanning of the scene, rather than scanning with a head-mounted camera, the system operates similar to 'virtual reality' devices. An image from a video camera is projected by a goggle-mounted collimated infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. The goggles are transparent to visible light, thus allowing for the simultaneous use of remaining natural vision along with prosthetic stimulation. Optical delivery of visual information to the implant allows for real-time image processing adjustable to retinal architecture, as well as flexible control of image processing algorithms and stimulation parameters.

  5. Design of a high-resolution optoelectronic retinal prosthesis

    NASA Astrophysics Data System (ADS)

    Palanker, Daniel; Vankov, Alexander; Huie, Phil; Baccus, Stephen

    2005-03-01

    It has been demonstrated that electrical stimulation of the retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. However, current retinal implants provide very low resolution (just a few electrodes), whereas at least several thousand pixels would be required for functional restoration of sight. This paper presents the design of an optoelectronic retinal prosthetic system with a stimulating pixel density of up to 2500 pix mm-2 (corresponding geometrically to a maximum visual acuity of 20/80). Requirements on proximity of neural cells to the stimulation electrodes are described as a function of the desired resolution. Two basic geometries of sub-retinal implants providing required proximity are presented: perforated membranes and protruding electrode arrays. To provide for natural eye scanning of the scene, rather than scanning with a head-mounted camera, the system operates similar to 'virtual reality' devices. An image from a video camera is projected by a goggle-mounted collimated infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. The goggles are transparent to visible light, thus allowing for the simultaneous use of remaining natural vision along with prosthetic stimulation. Optical delivery of visual information to the implant allows for real-time image processing adjustable to retinal architecture, as well as flexible control of image processing algorithms and stimulation parameters.

  6. Prospects of III-nitride optoelectronics grown on Si

    NASA Astrophysics Data System (ADS)

    Zhu, D.; Wallis, D. J.; Humphreys, C. J.

    2013-10-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures.

  7. Organic (opto)electronic materials: understanding charge carrier dynamics

    NASA Astrophysics Data System (ADS)

    Ostroverkhova, Oksana

    2008-05-01

    There is growing interest in using organic (opto)electronic materials for applications in electronics and photonics. In particular, organic semiconductor thin films offer several advantages over traditional silicon technology, including low-cost processing, the potential for large-area flexible devices, high-efficiency light emission, and widely tunable properties through functionalization of the molecules. Over the past decade, remarkable progress in materials design and purification has been made, which led to applications of organic semiconductors in light-emitting diodes, polymer lasers, photovoltaic cells, high-speed photodetectors, organic thin-film transistors, and many others. Most of the applications envisioned for organic semiconductors rely on their conductive or photoconductive properties. However, despite remarkable progress in organic electronics and photonics, the nature of charge carrier photogeneration and transport in organic semiconductors is not completely understood and remains controversial, partly due to difficulties in assessing intrinsic properties that are often masked by impurities, grain boundaries, etc. Measurements of charge carrier dynamics at picosecond time scales after excitation reveal the intrinsic nature of mobile charge carriers before they are trapped at defect sites. In this presentation, I will review the current state of the field and summarize our recent results on photoconductivity of novel high-performance organic semiconductors (such as functionalized pentacene and anthradithiophene thin films) from picoseconds to seconds after photoexcitation. Photoluminescent properties of these novel materials will also be discussed.

  8. Extreme Light Management in Mesoporous Wood Cellulose Paper for Optoelectronics.

    PubMed

    Zhu, Hongli; Fang, Zhiqiang; Wang, Zhu; Dai, Jiaqi; Yao, Yonggang; Shen, Fei; Preston, Colin; Wu, Wenxin; Peng, Peng; Jang, Nathaniel; Yu, Qingkai; Yu, Zongfu; Hu, Liangbing

    2016-01-26

    Wood fibers possess natural unique hierarchical and mesoporous structures that enable a variety of new applications beyond their traditional use. We dramatically modulate the propagation of light through random network of wood fibers. A highly transparent and clear paper with transmittance >90% and haze <1.0% applicable for high-definition displays is achieved. By altering the morphology of the same wood fibers that form the paper, highly transparent and hazy paper targeted for other applications such as solar cell and antiglare coating with transmittance >90% and haze >90% is also achieved. A thorough investigation of the relation between the mesoporous structure and the optical properties in transparent paper was conducted, including full-spectrum optical simulations. We demonstrate commercially competitive multitouch touch screen with clear paper as a replacement for plastic substrates, which shows excellent process compatibility and comparable device performance for commercial applications. Transparent cellulose paper with tunable optical properties is an emerging photonic material that will realize a range of much improved flexible electronics, photonics, and optoelectronics.

  9. Indium phosphide nanowires and their applications in optoelectronic devices

    PubMed Central

    Zafar, Fateen

    2016-01-01

    Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III–V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core–shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed. PMID:27118920

  10. Optoelectronic Instrument Monitors pH in a Culture Medium

    NASA Technical Reports Server (NTRS)

    Anderson, Melody M.; Pellis, Neal; Jeevarajan, Anthony S.; Taylor, Thomas D.

    2004-01-01

    An optoelectronic instrument monitors the pH of an aqueous cell-culture medium in a perfused rotating-wall-vessel bioreactor. The instrument is designed to satisfy the following requirements: It should be able to measure the pH of the medium continuously with an accuracy of 0.1 in the range from 6.5 to 7.5. It should be noninvasive. Any material in contact with the culture medium should be sterilizable as well as nontoxic to the cells to be grown in the medium. The biofilm that inevitably grows on any surface in contact with the medium should not affect the accuracy of the pH measurement. It should be possible to obtain accurate measurements after only one calibration performed prior to a bioreactor cell run. The instrument should be small and lightweight. The instrument includes a quartz cuvette through which the culture medium flows as it is circulated through the bioreactor. The cuvette is sandwiched between light source on one side and a photodetector on the other side. The light source comprises a red and a green light-emitting diode (LED) that are repeatedly flashed in alternation with a cycle time of 5 s. The responses of the photodiode to the green and red LEDs are processed electronically to obtain a quantity proportional to the ratio between the amounts of green and red light transmitted through the medium.

  11. Computational studies on optoelectronic and nonlinear properties of Octaphyrin derivatives

    NASA Astrophysics Data System (ADS)

    Islam, Nasarul; Lone, Irfan H.

    2017-03-01

    The electronic and nonlinear optical properties of octaphyrin derivatives were studied by employing the DFT/TDFT at CAM-B3LYP/6-311++G (2d, 2p) level of the theory. Thiophene, phenyl, methyl and cyano moieties were substituted on the molecular framework of octaphyrin core, in order to observe the change in optoelectronic and nonlinear response of these systems. The frontier molecular orbital studies and values of electron affinity reveals that the studied compounds are stable against the oxygen and moisture present in air. The calculated ionisation energies, adiabatic electron affinity and reorganization energy values indicate that octaphyrin derivatives can be employed as effective n-type material for Organic Light Emitting Diodes (OLEDs). This character shows an enhancement with the introduction of an electron withdrawing group in the octaphyrin framework. The polarizability and hyperpolarizability values of octaphyrin derivatives demonstrate that they are good candidates for nonlinear optical devices. The nonlinear response of these systems shows enhancement on the introduction of electron donating groups on octaphyrin moiety. However these claims needs further experimental verification.

  12. Laser processing of components for polymer mircofluidic and optoelectronic products

    NASA Astrophysics Data System (ADS)

    Gillner, Arnold; Bremus-Koebberling, Elke A.; Wehner, Martin; Russek, Ulrich A.; Berden, Thomas

    2001-06-01

    Miniaturization is one of the keywords for the production of customer oriented and highly integrated consumer products like mobile phones, portables and other products from the daily life and there are some first silicon made products like pressure sensors, acceleration sensors and micro fluidic components, which are built in automobiles, washing machines and medical products. However, not all applications can be covered with this material, because of the limitations in lateral and 3-dimensional structuring, the mechanical behavior, the functionality and the costs of silicon. Therefore other materials, like polymers have been selected as suitable candidates for cost effective mass products. This holds especially for medical and optical applications, where the properties of selected polymers, like biocompatibility, inert chemical behavior and high transparency can be used. For this material laser micro processing offers appropriate solutions for structuring as well as for packaging with high flexibility, material variety, structure size, processing speed and easy integration into existing fabrication plants. The paper presents recent results and industrial applications of laser micro processing for polymer micro fluidic devices, like micro analysis systems, micro reactors and medical micro implants, where excimer radiation is used for lateral structuring and diode lasers have used for joining and packaging. Similar technologies have been applied to polymer waveguides to produce passive optoelectronic components for high speed interconnection with surface roughness less than 20 nm and low attenuation. The paper also reviews the technical and economical limitations and the potential of the technology for other micro products.

  13. Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing.

    PubMed

    Jariwala, Deep; Sangwan, Vinod K; Lauhon, Lincoln J; Marks, Tobin J; Hersam, Mark C

    2013-04-07

    In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in selected applications, issues surrounding structural inhomogeneity and imprecise assembly have impeded robust and reliable implementation of carbon nanomaterials in widespread technologies. However, with recent advances in synthesis, sorting, and assembly techniques, carbon nanomaterials are experiencing renewed interest as the basis of numerous scalable technologies. Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity samples. Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area. In this manner, this article will provide guidance to future application developers and also articulate the remaining research challenges confronting this field.

  14. Computational Studies on Optoelectronic and Nonlinear Properties of Octaphyrin Derivatives

    PubMed Central

    Islam, Nasarul; Lone, Irfan H.

    2017-01-01

    The electronic and nonlinear optical (NLO) properties of octaphyrin derivatives were studied by employing the DFT/TDFT at CAM-B3LYP/6-311++G (2d, 2p) level of the theory. Thiophene, phenyl, methyl and cyano moieties were substituted on the molecular framework of octaphyrin core, in order to observe the change in optoelectronic and nonlinear response of these systems. The frontier molecular orbital studies and values of electron affinity reveals that the studied compounds are stable against the oxygen and moisture present in air. The calculated ionization energies, adiabatic electron affinity and reorganization energy values indicate that octaphyrin derivatives can be employed as effective n-type material for Organic Light Emitting Diodes (OLEDs). This character shows an enhancement with the introduction of an electron withdrawing group in the octaphyrin framework. The polarizability and hyperpolarizability values of octaphyrin derivatives demonstrate that they are good candidates for NLO devices. The nonlinear response of these systems shows enhancement on the introduction of electron donating groups on octaphyrin moiety. However, these claims needs further experimental verification. PMID:28321394

  15. Computational Studies on Optoelectronic and Nonlinear Properties of Octaphyrin Derivatives.

    PubMed

    Islam, Nasarul; Lone, Irfan H

    2017-01-01

    The electronic and nonlinear optical (NLO) properties of octaphyrin derivatives were studied by employing the DFT/TDFT at CAM-B3LYP/6-311++G (2d, 2p) level of the theory. Thiophene, phenyl, methyl and cyano moieties were substituted on the molecular framework of octaphyrin core, in order to observe the change in optoelectronic and nonlinear response of these systems. The frontier molecular orbital studies and values of electron affinity reveals that the studied compounds are stable against the oxygen and moisture present in air. The calculated ionization energies, adiabatic electron affinity and reorganization energy values indicate that octaphyrin derivatives can be employed as effective n-type material for Organic Light Emitting Diodes (OLEDs). This character shows an enhancement with the introduction of an electron withdrawing group in the octaphyrin framework. The polarizability and hyperpolarizability values of octaphyrin derivatives demonstrate that they are good candidates for NLO devices. The nonlinear response of these systems shows enhancement on the introduction of electron donating groups on octaphyrin moiety. However, these claims needs further experimental verification.

  16. Optoelectronic plethysmography compared to spirometry during maximal exercise.

    PubMed

    Layton, Aimee M; Moran, Sienna L; Garber, Carol Ewing; Armstrong, Hilary F; Basner, Robert C; Thomashow, Byron M; Bartels, Matthew N

    2013-01-15

    The purpose of this study was to compare simultaneous measurements of tidal volume (Vt) by optoelectronic plethysmography (OEP) and spirometry during a maximal cycling exercise test to quantify possible differences between methods. Vt measured simultaneously by OEP and spirometry was collected during a maximal exercise test in thirty healthy participants. The two methods were compared by linear regression and Bland-Altman analysis at submaximal and maximal exercise. The average difference between the two methods and the mean percentage discrepancy were calculated. Submaximal exercise (SM) and maximal exercise (M) Vt measured by OEP and spirometry had very good correlation, SM R=0.963 (p<0.001), M R=0.982 (p<0.001) and high degree of common variance, SM R(2)=0.928, M R(2)=0.983. Bland-Altman analysis demonstrated that during SM, OEP could measure exercise Vt as much as 0.134 L above and -0.025 L below that of spirometry. OEP could measure exercise Vt as much as 0.188 L above and -0.017 L below that of spirometry. The discrepancy between measurements was -2.0 ± 7.2% at SM and -2.4 ± 3.9% at M. In conclusion, Vt measurements at during exercise by OEP and spirometry are closely correlated and the difference between measurements was insignificant.

  17. Electronic and optoelectronic materials and devices inspired by nature.

    PubMed

    Meredith, P; Bettinger, C J; Irimia-Vladu, M; Mostert, A B; Schwenn, P E

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities-some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the 'ubiquitous sensor network', all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow ('ionics and protonics') and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  18. Advanced polymer systems for optoelectronic integrated circuit applications

    NASA Astrophysics Data System (ADS)

    Eldada, Louay A.; Stengel, Kelly M. T.; Shacklette, Lawrence W.; Norwood, Robert A.; Xu, Chengzeng; Wu, Chengjiu; Yardley, James T.

    1997-01-01

    An advanced versatile low-cost polymeric waveguide technology is proposed for optoelectronic integrated circuit applications. We have developed high-performance organic polymeric materials that can be readily made into both multimode and single-mode optical waveguide structures of controlled numerical aperture (NA) and geometry. These materials are formed from highly crosslinked acrylate monomers with specific linkages that determine properties such as flexibility, toughness, loss, and stability against yellowing and humidity. These monomers are intermiscible, providing for precise adjustment of the refractive index from 1.30 to 1.60. Waveguides are formed photolithographically, with the liquid monomer mixture polymerizing upon illumination in the UV via either mask exposure or laser direct-writing. A wide range of rigid and flexible substrates can be used, including glass, quartz, oxidized silicon, glass-filled epoxy printed circuit board substrate, and flexible polyimide film. We discuss the use of these materials on chips and on multi-chip modules (MCMs), specifically in transceivers where we adaptively produced waveguides on vertical-cavity surface-emitting lasers (VCSELs) embedded in transmitter MCMs and on high- speed photodetector chips in receiver MCMs. Light coupling from and to chips is achieved by cutting 45 degree mirrors using excimer laser ablation. The fabrication of our polymeric structures directly on the modules provides for stability, ruggedness, and hermeticity in packaging.

  19. Molecular organization of bacteriorhodopsin films in optoelectronic devices

    SciTech Connect

    Koyama, K.

    1995-12-31

    An extremely stable light sensitive retinal protein, bacteriorhodopsin (bR) is isolated as 2-dimensional crystalline array called purple membrane (PM) from the cell membrane of Halobacterium halobium. The intrinsic properties of bR are suitable for optical and optoelectronic applications. A photocell composed of SnO{sub 2}/PM thin film/electrolyte gel/counterelectronic was fabricated, which shows differential responsivity to light. A 256-pixel photoreceptor made of the photocell is capable of various types of optical information processing, such as mobile image extraction and edge detection, which are essential for visual functions in the vertebrate retina. To improve the efficiency of photoelectric conversion, we have established a method to control the orientation of the protein molecules by two kinds of bispecific (BS) antibodies with different binding sites, one binding to a specific side of bR and the other to a phospholipid hapten. A hapten monolayer deposited on a metal electrode was treated with a BS antibody solution solution and incubated with a PM suspension to produce a highly oriented PM film. A comparison of PM monolayers with different orientations showed that highly and rectified efficient photocurrents were produced by the PM orientation in which cytoplasmic surface of bR faces the electrode. The confirmation of the orientation and uniformity of PM by immuno-gold labeling techniques will be described.

  20. New optoelectronic sensor for measuring biologically effective irradiance

    NASA Astrophysics Data System (ADS)

    Kosyachenko, Leonid A.; Sklyarchuk, Valery M.

    1997-12-01

    A new optoelectronic sensor whose spectral responsivity to UV radiation is almost identical with that of the human skin or of the eyes is presented. The sensor comprises two closely-spaced UV-sensitive Au-SiC diode, one of which is fitted with a glass filter. The photodiodes are connected to electronics that amplifies, combines and subtracts electrical signals generated by radiation in the photodiodes. The responsivity of the Au-SiC diode structure with a semitransparent gold electrode covers the whole UV spectrum, with the long-wavelength end bounded by the semiconductor bandgap. The photodiode with a filter absorbing wavelengths shorter than 315-320 nm is responsive in the UV-A region, while the difference between the electrical signals generated in the filter-containing and filter-free diodes is determined by the UV-B + IV-C radiation. The measuring of biologically effective radiation over the entire UV spectral range is achieved through combining the signal generated by UV-A radiation and the previously amplified difference signal generated by UV-B + UV-C radiation. The sensor spectral responsivity thus obtained is very close to the tabular curve of the relative spectral effectiveness of UV radiation on the normal human skin or eyes.

  1. A nanomesh scaffold for supramolecular nanowire optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Zhong, Xiaolan; Pavlica, Egon; Li, Songlin; Klekachev, Alexander; Bratina, Gvido; Ebbesen, Thomas W.; Orgiu, Emanuele; Samorì, Paolo

    2016-10-01

    Supramolecular organic nanowires are ideal nanostructures for optoelectronics because they exhibit both efficient exciton generation as a result of their high absorption coefficient and remarkable light sensitivity due to the low number of grain boundaries and high surface-to-volume ratio. To harvest photocurrent directly from supramolecular nanowires it is necessary to wire them up with nanoelectrodes that possess different work functions. However, devising strategies that can connect multiple nanowires at the same time has been challenging. Here, we report a general approach to simultaneously integrate hundreds of supramolecular nanowires of N,N‧-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) in a hexagonal nanomesh scaffold with asymmetric nanoelectrodes. Optimized PTCDI-C8 nanowire photovoltaic devices exhibit a signal-to-noise ratio approaching 107, a photoresponse time as fast as 10 ns and an external quantum efficiency >55%. This nanomesh scaffold can also be used to investigate the fundamental mechanism of photoelectrical conversion in other low-dimensional semiconducting nanostructures.

  2. Optoelectronics in two-dimensional semiconductor alloys (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Léonard, François

    2015-08-01

    Two -dimensional transition-metal dichalcogenides (2D-TMDs) have attracted attention for applications in electronics and photonics, as well as for the wealth of new scientific phenomena that arise at low dimensionality. Recently, the ability to grow 2D-TMDs by chemical vapor deposition has opened the path to large area devices, but also to the synthesis of semiconductor alloys with tunable bandgaps. In this presentation, I will discuss our recent experimental work in exploring the optoelectronic properties of 2D MoS_2(1-x)Se_2x alloys spanning the compositional range. In particular, we report the observation of a new regime of operation where the photocurrent depends superlinearly on light intensity. We use spatially-resolved photocurrent measurements on devices consisting of CVD-grown monolayers to show the photoconductive nature of the photoresponse, with the photocurrent dominated by recombination and field-induced carrier separation in the channel. Time-dependent photoconductivity measurements show the presence of persistent photoconductivity for the S-rich alloys, while photocurrent measurements at fixed wavelength for devices of different alloy compositions show a systematic decrease of the responsivity with increasing Se content associated with increased linearity of the current-voltage characteristics. A model based on the presence of different types of recombination centers is presented to explain the origin of the superlinear dependence on light intensity, which emerges when the non-equilibrium occupancy of initially empty fast recombination centers becomes comparable to that of slow recombination centers.

  3. CMOS Optoelectronic Lock-In Amplifier With Integrated Phototransistor Array.

    PubMed

    An Hu; Chodavarapu, Vamsy P

    2010-10-01

    We describe the design and development of an optoelectronic lock-in amplifier (LIA) for optical sensing and spectroscopy applications. The prototype amplifier is fabricated using Taiwan Semiconductor Manufacturing Co. complementary metal-oxide semiconductor 0.35-μm technology and uses a phototransistor array (total active area is 400 μm × 640μm) to convert the incident optical signals into electrical currents. The photocurrents are then converted into voltage signals using a transimpedance amplifier for subsequent convenient signal processing by the LIA circuitry. The LIA is optimized to be operational at 20-kHz modulation frequency but is operational in the frequency range from 13 kHz to 25 kHz. The system is tested with a light-emitting diode (LED) as the light source. The noise and signal distortions are suppressed with filters and a phase-locked loop (PLL) implemented in the LIA. The output dc voltage of the LIA is proportional to the incident optical power. The minimum measured dynamic reserve and sensitivity are 1.31 dB and 34 mV/μW, respectively. The output versus input relationship has shown good linearity. The LIA consumes an average power of 12.79 mW with a 3.3-V dc power supply.

  4. Narrow band gap conjugated polymers for emergent optoelectronic technologies

    NASA Astrophysics Data System (ADS)

    Azoulay, Jason D.; Zhang, Benjamin A.; London, Alexander E.

    2015-09-01

    Conjugated organic molecules effectively produce and harvest visible light and find utility in a variety of emergent optoelectronic technologies. There is currently interest in expanding the scope of these materials to extend functionality into the infrared (IR) spectral regions and endow functionality relevant in emergent technologies. Developing an understanding of the interplay between chemical and electronic structure in these systems will require control of the frontier orbital energetics (separation, position, and alignment), ground state electronic configurations, interchain arrangements, solid-state properties, and many other molecular features with synthetic precision that has yet to be demonstrated. Bridgehead imine substituted 4H-cyclopenta[2,1-b:3,4-b']dithiophene (CPDT) structural units, in combination with strong acceptors with progressively delocalized π-systems, afford modular donor-acceptor copolymers with broad and long wavelength absorption that spans technologically relevant wavelength (λ) ranges from 0.7 < λ < 3.2 μm.1 Here we demonstrate that electronic and structural manipulation play a major role in influencing the energetics of these systems and ultimately controlling the band gap of the materials. These results bear implication in the development of very narrow band gap systems where precise control will be necessary for achieving desired properties such as interactions with longer wavelength light.

  5. 3-D movies using microprocessor-controlled optoelectronic spectacles

    NASA Astrophysics Data System (ADS)

    Jacobs, Ken; Karpf, Ron

    2012-02-01

    Despite rapid advances in technology, 3-D movies are impractical for general movie viewing. A new approach that opens all content for casual 3-D viewing is needed. 3Deeps--advanced microprocessor controlled optoelectronic spectacles--provides such a new approach to 3-D. 3Deeps works on a different principle than other methods for 3-D. 3-D movies typically use the asymmetry of dual images to produce stereopsis, necessitating costly dual-image content, complex formatting and transmission standards, and viewing via a corresponding selection device. In contrast, all 3Deeps requires to view movies in realistic depth is an illumination asymmetry--a controlled difference in optical density between the lenses. When a 2-D movie has been projected for viewing, 3Deeps converts every scene containing lateral motion into realistic 3-D. Put on 3Deeps spectacles for 3-D viewing, or remove them for viewing in 2-D. 3Deeps works for all analogue and digital 2-D content, by any mode of transmission, and for projection screens, digital or analogue monitors. An example using aerial photography is presented. A movie consisting of successive monoscopic aerial photographs appears in realistic 3-D when viewed through 3Deeps spectacles.

  6. Simulating optoelectronic systems for remote sensing with SENSOR

    NASA Astrophysics Data System (ADS)

    Boerner, Anko

    2003-04-01

    The consistent end-to-end simulation of airborne and spaceborne remote sensing systems is an important task and sometimes the only way for the adaptation and optimization of a sensor and its observation conditions, the choice and test of algorithms for data processing, error estimation and the evaluation of the capabilities of the whole sensor system. The presented software simulator SENSOR (Software ENvironment for the Simulation of Optical Remote sensing systems) includes a full model of the sensor hardware, the observed scene, and the atmosphere in between. It allows the simulation of a wide range of optoelectronic systems for remote sensing. The simulator consists of three parts. The first part describes the geometrical relations between scene, sun, and the remote sensing system using a ray tracing algorithm. The second part of the simulation environment considers the radiometry. It calculates the at-sensor radiance using a pre-calculated multidimensional lookup-table taking the atmospheric influence on the radiation into account. Part three consists of an optical and an electronic sensor model for the generation of digital images. Using SENSOR for an optimization requires the additional application of task-specific data processing algorithms. The principle of the end-to-end-simulation approach is explained, all relevant concepts of SENSOR are discussed, and examples of its use are given. The verification of SENSOR is demonstrated.

  7. Organic non-linear optics and opto-electronics

    NASA Astrophysics Data System (ADS)

    Maldonado, J. L.; Ramos-Ortíz, G.; Rodríguez, M.; Meneses-Nava, M. A.; Barbosa-García, O.; Santillán, R.; Farfán, N.

    2010-12-01

    π-conjugated organic molecules and polymers are of great importance in physics, chemistry, material science and engineering. It is expected that, in the near future, organic materials will find widespread use in many technological applications. In the case of organic opto-electronic systems, the list of devices includes light emitting diodes (OLEDs), photovoltaic cells (OPVs), field-effect transistors (OFET), photorefractive materials for light manipulation, among others. These materials are also used for photonic applications: all-optical switching, modulators, optical correlators, plastic waveguides, all polymeric integrated circuits, solid-state lasers, and for biophotonic applications as in the case of the development of organic labels for multiphoton microscopy and photodynamic therapy. The advances in the developing of organic compounds with better mechanical, electrical, and optical (linear and non-linear) characteristics are of a great importance for this field. Here, we present the research on this area carried out at the Centro de Investigaciones en Óp-tica (CIO), in collaboration with Chemistry Departments of different institutions. This work focuses on the optical characterization of materials through several techniques such as TOF, FWM, TBC, THG Maker Fringes, HRS, Z-scan, and TPEF. Additionally, some applications, such as dynamic holography by using photorefractive polymers, and OPVs cells will be discussed.

  8. Prospects of III-nitride optoelectronics grown on Si.

    PubMed

    Zhu, D; Wallis, D J; Humphreys, C J

    2013-10-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures.

  9. Electrophoretic Versus Dielectrophoretic Nanoparticle Patterning Using Optoelectronic Tweezers

    NASA Astrophysics Data System (ADS)

    Muñoz-Martínez, Juan F.; Ramiro, José B.; Alcázar, Ángel; García-Cabañes, Ángel; Carrascosa, Mercedes

    2017-06-01

    Currently, there is increasing interest from many scientific disciplines in the development of systems that are able to sort and arrange many objects in parallel at the nano- and micrometric scale. Among others, photovoltaic tweezers (PVT) are an optoelectronic technique for trapping and patterning nano- and micro-objects in accordance with an arbitrary light profile. In this work, the differential features of electro- and dielectrophoretic (EP and DEP) nanoparticle (NP) patterning using PVT are deeply investigated. The study is carried out through theory and experiments. The developed theory extends the applicability of a previously reported model to be able to compute EP potentials and to obtain numerical values for the EP and DEP potential energies. Two-dimensional patterns of charged and neutral aluminum NPs are fabricated on top of Fe ∶LiNbO3 crystals, and different light distributions and other experimental parameters (crystal thickness and NP concentration) are compared. Patterns of charged and neutral NPs show remarkable differences in both particle density distribution and fidelity to the original light profile. The observed different features between EP and DEP trapping are satisfactorily explained by the theoretical analysis. The results provide routes for the optimization of the NP arrangements for both regimes.

  10. Optoelectronic Chaos in a Simple Light Activated Feedback Circuit

    NASA Astrophysics Data System (ADS)

    Joiner, K. L.; Palmero, F.; Carretero-González, R.

    The nonlinear dynamics of an optoelectronic negative feedback switching circuit is studied. The circuit, composed of a bulb, a photoresistor, a thyristor and a linear resistor, corresponds to a nightlight device whose light is looped back into its light sensor. Periodic bifurcations and deterministic chaos are obtained by the feedback loop created when the thyristor switches on the bulb in the absence of light being detected by the photoresistor and the bulb light is then looped back into the nightlight to switch it off. The experimental signal is analyzed using tools of delay-embedding reconstruction that yield a reconstructed attractor with fractional dimension and positive Lyapunov exponent suggesting chaotic behavior for some parameter values. We construct a simple circuit model reproducing experimental results that qualitatively matches the different dynamical regimes of the experimental apparatus. In particular, we observe an order-chaos-order transition as the strength of the feedback is varied corresponding to varying the distance between the nightlight bulb and its photo-detector. A two-dimensional parameter diagram of the model reveals that the order-chaos-order transition is generic for this system.

  11. Optoelectronic parallel processing with smart pixel arrays for automated screening of cervical smear imagery

    NASA Astrophysics Data System (ADS)

    Metz, John Langdon

    2000-10-01

    This thesis investigates the use of optoelectronic parallel processing systems with smart photosensor arrays (SPAs) to examine cervical smear images. The automation of cervical smear screening seeks to reduce human workload and improve the accuracy of detecting pre- cancerous and cancerous conditions. Increasing the parallelism of image processing improves the speed and accuracy of locating regions-of-interest (ROI) from images of the cervical smear for the first stage of a two-stage screening system. The two-stage approach first detects ROI optoelectronically before classifying them using more time consuming electronic algorithms. The optoelectronic hit/miss transform (HMT) is computed using gray scale modulation spatial light modulators in an optical correlator. To further the parallelism of this system, a novel CMOS SPA computes the post processing steps required by the HMT algorithm. The SPA reduces the subsequent bandwidth passed into the second, electronic image processing stage classifying the detected ROI. Limitations in the miss operation of the HMT suggest using only the hit operation for detecting ROI. This makes possible a single SPA chip approach using only the hit operation for ROI detection which may replace the optoelectronic correlator in the screening system. Both the HMT SPA postprocessor and the SPA ROI detector design provide compact, efficient, and low-cost optoelectronic solutions to performing ROI detection on cervical smears. Analysis of optoelectronic ROI detection with electronic ROI classification shows these systems have the potential to perform at, or above, the current error rates for manual classification of cervical smears.

  12. Thin film technologies for optoelectronic components in fiber optic communication

    NASA Astrophysics Data System (ADS)

    Perinati, Agostino

    1998-02-01

    will grow at an annual average rate of 22 percent from 1.3 million fiber-km in 1995 to 3.5 million fiber-km in 2000. The worldwide components market-cable, transceivers and connectors - 6.1 billion in 1994, is forecasted to grow and show a 19 percent combined annual growth rate through the year 2000 when is predicted to reach 17.38 billion. Fiber-in-the-loop and widespread use of switched digital services will dominate this scenario being the fiber the best medium for transmitting multimedia services. As long as communication will partially replace transportation, multimedia services will push forward technology for systems and related components not only for higher performances but for lower cost too in order to get the consumers wanting to buy the new services. In the long distance transmission area (trunk network) higher integration of electronic and optoelectronic functions are required for transmitter and receiver in order to allow for higher system speed, moving from 2.5 Gb/s to 5, 10, 40 Gb/s; narrow band wavelength division multiplexing (WDM) filters are required for higher transmission capacity through multiwavelength technique and for optical amplifier. In the access area (distribution network) passive components as splitters, couplers, filters are needed together with optical amplifiers and transceivers for point-to-multipoint optical signal distribution: main issue in this area is the total cost to be paid by the customer for basic and new services. Multimedia services evolution, through fiber to the home and to the desktop approach, will be mainly affected by the availability of technologies suitable for component consistent integration, high yield manufacturing processes and final low cost. In this paper some of the optoelectronic components and related thin film technologies expected to mainly affect the fiber optic transmission evolution, either for long distance telecommunication systems or for subscriber network, are presented.

  13. Atomic Clock Based on Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Yu, Nan

    2005-01-01

    A proposed highly accurate clock or oscillator would be based on the concept of an opto-electronic oscillator (OEO) stabilized to an atomic transition. Opto-electronic oscillators, which have been described in a number of prior NASA Tech Briefs articles, generate signals at frequencies in the gigahertz range characterized by high spectral purity but not by longterm stability or accuracy. On the other hand, the signals generated by previously developed atomic clocks are characterized by long-term stability and accuracy but not by spectral purity. The proposed atomic clock would provide high spectral purity plus long-term stability and accuracy a combination of characteristics needed to realize advanced developments in communications and navigation. In addition, it should be possible to miniaturize the proposed atomic clock. When a laser beam is modulated by a microwave signal and applied to a photodetector, the electrical output of the photodetector includes a component at the microwave frequency. In atomic clocks of a type known as Raman clocks or coherent-population-trapping (CPT) clocks, microwave outputs are obtained from laser beams modulated, in each case, to create two sidebands that differ in frequency by the amount of a hyperfine transition in the ground state of atoms of an element in vapor form in a cell. The combination of these sidebands produces a transparency in the population of a higher electronic level that can be reached from either of the two ground-state hyperfine levels by absorption of a photon. The beam is transmitted through the vapor to a photodetector. The components of light scattered or transmitted by the atoms in the two hyperfine levels mix in the photodetector and thereby give rise to a signal at the hyperfine- transition frequency. The proposed atomic clock would include an OEO and a rubidium- or cesium- vapor cell operating in the CPT/Raman regime (see figure). In the OEO portion of this atomic clock, as in a typical prior OEO, a

  14. Chip scale low dimensional materials: optoelectronics & nonlinear optics

    NASA Astrophysics Data System (ADS)

    Gu, Tingyi

    The CMOS foundry infrastructure enables integration of high density, high performance optical transceivers. We developed integrated devices that assemble resonators, waveguide, tapered couplers, pn junction and electrodes. Not only the volume standard manufacture in silicon foundry is promising to low-lost optical components operating at IR and mid-IR range, it also provides a robust platform for revealing new physical phenomenon. The thesis starts from comparison between photonic crystal and micro-ring resonators based on chip routers, showing photonic crystal switches have small footprint, consume low operation power, but its higher linear loss may require extra energy for signal amplification. Different designs are employed in their implementation in optical signal routing on chip. The second part of chapter 2 reviews the graphene based optoelectronic devices, such as modulators, lasers, switches and detectors, potential for group IV optoelectronic integrated circuits (OEIC). In chapter 3, the highly efficient thermal optic control could act as on-chip switches and (transmittance) tunable filters. Local temperature tuning compensates the wavelength differences between two resonances, and separate electrode is used for fine tuning of optical pathways between two resonators. In frequency domain, the two cavity system also serves as an optical analogue of Autler-Towns splitting, where the cavity-cavity resonance detuning is controlled by the length of pathway (phase) between them. The high thermal sensitivity of cavity resonance also effectively reflects the heat distribution around the nanoheaters, and thus derives the thermal conductivity in the planar porous suspended silicon membrane. Chapter 4 & 5 analyze graphene-silicon photonic crystal cavities with high Q and small mode volume. With negligible nonlinear response to the milliwatt laser excitation, the monolithic silicon PhC turns into highly nonlinear after transferring the single layer graphene with

  15. Adhesion of functional layer on polymeric substrates for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Amendola, E.; Cammarano, A.; Pezzuto, M.; Acierno, D.

    2009-06-01

    The use of plastic film substrates for organic electronic devices promises to enable new applications, such as flexible displays. Plastic substrates have several distinct advantages, such as ruggedness, robustness, ultra lightness, conformability and impact resistance over glass substrates, which are primarily used in flat panel displays (FPDs) today. However, high transparency, proper surface roughness, low gas permeability and high transparent electrode conductivity of the plastic substrate are required for commercial applications. Polyesters, both amorphous and semicrystalline, are a promising class of commercial polymer for optoelectronic applications. Surface modification of polyester films was performed via chemical solution determining hydrolysis or oxidation. Hydrolysis was carried out by means of sodium hydroxide solution and oxidation by using standard clean 1 (SC-1) of RCA procedure [1]. For this work we have used commercial polymer films of 100μm in thickness: AryLite [2], supplied by Ferrania Imaging Technologies S.p.A. and characterised by very high glass transition temperature, Mylar (Polyethylene Terephthalate PET) and Teonex (Polyethylene Naphthalate PEN) both supplied by Dupont. More over, a bioriented and semicrystalline PET have been used. The aim of this study is modifying the polymer surface to improve the adhesion between organic-inorganic layer. It was found that the NaOH and SC-1 treatment cause a decrease of contact angles. In the present study we have deposited a thin films of amorphous hydrogenated silicon (a-Si:H) and its oxide (SiO2) on a new high temperature polymer substrate, AryLite, by plasma enhanced chemical vapour deposition (PECVD) [3], with a radio frequency plasma system.

  16. Optoelectronic properties of dicyanofluorene-based n-type polymers.

    PubMed

    Vijayakumar, Chakkooth; Saeki, Akinori; Seki, Shu

    2012-08-01

    Three new donor-acceptor-type copolymers (P1-P3) consisting of dicyanofluorene as acceptor and various donor moieties were designed and synthesized. Optoelectronic properties were studied in detail by means of UV-visible absorption and fluorescence spectroscopy, cyclic voltammetry, space-charge-limited current (SCLC), flash-photolysis time-resolved microwave conductivity (FP-TRMC), and density functional theory (DFT). All polymers showed strong absorption in the UV-visible region and the absorption maximum undergoes redshift with an increasing number of thiophene units in the polymer backbone. SCLC analysis showed that the electron mobilities of the polymers in the bulk state were 1 to 2 orders higher than that of the corresponding hole mobilities, which indicated the n-type nature of the materials. By using FP-TRMC, the intrapolymer charge-carrier mobility was assessed and compared with the interpolymer mobility obtained by SCLC. The polymers exhibited good electron-accepting properties sufficiently high enough to oxidize the excited states of regioregular poly(3-hexylthiophene) (P3HT (donor)), as evident from the FP-TRMC analysis. The P3 polymer exhibited the highest FP-TRMC transients in the pristine form as well as when blended with P3HT. Use of these polymers as n-type materials in all-polymer organic solar cells was also explored in combination with P3HT. In accordance with the TRMC results, P3 exhibited superior electron-transport and photovoltaic properties to the other two polymers, which is explained by the distribution of the energy levels of the polymers by using DFT calculations.

  17. Optoelectronic properties of semiconducting polymers and related applications

    NASA Astrophysics Data System (ADS)

    Wang, Jian

    2000-10-01

    Since the discovery of semiconducting (conjugated) polymers in 1977 by Heeger, MacDiarmid and Shirakawa, a wide variety of electrical and optical devices have been developed using semiconducting polymers, such as light-emitting diodes, photodetectors, and fluorescent biosensors. All the devices are based on the electro-optical or optoelectronic properties of conjugated polymers. So understanding the fundamental electronic structures is of particular importance. A general picture of electronic excitation of PPV upon photoexcitation remains a subject of intense debate. I addressed this problem by studying the photoconductivity excitation profile of aligned PPV sample with polarized light parallel and perpendicular to the chain axis. The spectral signature of the exciton is observed in the excitation profile as a narrow peak that emerges just below the band edge upon increasing the external field, the defect density or the temperature. The exciton binding energy is obtained from the energy of the narrow exciton peak with respect to the band edge, and independently, from analysis of the field dependence and temperature dependence of the exciton dissociation: Eb ˜ 60 meV. The fluorescence quenching of luminescent polymers by electron acceptors through photoinduced charge transfer opens a new opportunity for conjugated polymers in biological and chemical sensors for use in medical diagnostics and toxicology. A comprehensive studies of the quenching mechanisms in two polymer:quencher systems in solutions are presented. The basic quenching mode is identified by carefully studying the buffer ions' effects, absorption profile, and temperature effects. Finally, an application of photodetector utilizing conjugated polymers is presented. A large area photodetector is demonstrated to have true color (24 bit) resolution.

  18. Optoelectronic blood oximetry as a tool of health safety monitoring

    NASA Astrophysics Data System (ADS)

    Cysewska-Sobusiak, Anna

    2001-08-01

    A metrological approach of some selected problems connected with the significant field of biomedical optics i.e., monitoring of arterial blood oxygenation by use of the tissues as optical media exposed to the controlled light action, has been presented. The subject of the measurements based on utilization of the selection absorption properties of blood is the hemoglobin oxygen saturation. Using optoelectronic sensing allows to convert sophisticated effects of noninvasive light-living tissue interaction to electrical signals which may be convenient to measure. Pulse oximetry which is based upon such a way of sensing and processing, is the recent advance in noninvasive oximetry. The unique advantages of that marvelous diagnostic technique have caused to recommend pulse oximeters as standard equipment in intensive care and other critical situations impending hypoxemia appearance. However, end-users of the pulse oximeters not always are aware of that these devices fall under specific limitations, of both physiological and technical nature. The author of this paper is a metrologist and deals mainly with various interdisciplinary problems of a measurement reliability including the aspects such as uncertainty of an outcome accessible to the user, causes affecting sensitivity, resolution and repeatability of processing function, and response time and stability of results. Referring to the subject discussed herein, and taking into account some open questions, the author's contribution is her own experience in modeling as well as in in vivo measuring of transilluminated living objects. A proposed novel use of the known pulse oximetry concept may be considered as complementary results against a general review background of the achievements obtained in oximetry as the state-of-the-art, and furthermore, the developing studies which are still in progress.

  19. Optoelectronic properties of nanostructured ensembles controlled by biomolecular logic systems.

    PubMed

    Pita, Marcos; Krämer, Melina; Zhou, Jian; Poghossian, Arshak; Schöning, Michael J; Fernández, Víctor M; Katz, Evgeny

    2008-10-28

    A nanostructured system composed of enzyme-functionalized silica microparticles, ca. 74 microm, and gold-coated magnetic nanoparticles, 18 +/- 3 nm, modified with pH-sensitive organic shells was used to process biochemical signals and transduce the output signal into the changes of the optoelectronic properties of the assembly. The enzymes (glucose oxidase, invertase, esterase) covalently bound to the silica microparticles performed Boolean logic operations AND/OR processing biochemical information received in the form of chemical input signals resulting in changes of the solution pH value. Dissociation state of the organic shells on the gold-coated magnetic nanoparticles was controlled by pH changes generated in situ by the enzyme logic systems. The charge variation on the organic shells upon the reversible protonation/dissociation process resulted in the changes of the gold layer localized surface plasmon resonance energy (LSPR), thus producing optical changes in the system. The proton transfer process allowed the functional coupling of the information processing enzyme systems with the signal transducing gold-coated magnetic nanoparticles providing their cooperative performance. Magnetic properties of the gold-coated magnetic nanoparticles allowed separation of the signal-transducing nanoparticles from the enzyme-modified signal processing silica microparticles. The reversible system operation was achieved by the Reset function, returning the pH value and optical properties of the system to the initial state. This process was biocatalyzed by another immobilized enzyme (urease) activated with a biochemical signal. The studied approach opens the way to novel optical biosensors logically processing multiple biochemical signals and "smart" multisignal responsive materials with logically switchable optical properties.

  20. Development of optoelectronic monitoring system for ear arterial pressure waveforms

    NASA Astrophysics Data System (ADS)

    Sasayama, Satoshi; Imachi, Yu; Yagi, Tamotsu; Imachi, Kou; Ono, Toshirou; Man-i, Masando

    1994-02-01

    Invasive intra-arterial blood pressure measurement is the most accurate method but not practical if the subject is in motion. The apparatus developed by Wesseling et al., based on a volume-clamp method of Penaz (Finapres), is able to monitor continuous finger arterial pressure waveforms noninvasively. The limitation of Finapres is the difficulty in measuring the pressure of a subject during work that involves finger or arm action. Because the Finapres detector is attached to subject's finger, the measurements are affected by inertia of blood and hydrostatic effect cause by arm or finger motion. To overcome this problem, the authors made a detector that is attached to subject's ear and developed and optoelectronic monitoring systems for ear arterial pressure waveform (Earpres). An IR LEDs, photodiode, and air cuff comprised the detector. The detector was attached to a subject's ear, and the space adjusted between the air cuff and the rubber plate on which the LED and photodiode were positioned. To evaluate the accuracy of Earpres, the following tests were conducted with participation of 10 healthy male volunteers. The subjects rested for about five minutes, then performed standing and squatting exercises to provide wide ranges of systolic and diastolic arterial pressure. Intra- and inter-individual standard errors were calculated according to the method of van Egmond et al. As a result, average, the averages of intra-individual standard errors for earpres appeared small (3.7 and 2.7 mmHg for systolic and diastolic pressure respectively). The inter-individual standard errors for Earpres were about the same was Finapres for both systolic and diastolic pressure. The results showed the ear monitor was reliable in measuring arterial blood pressure waveforms and might be applicable to various fields such as sports medicine and ergonomics.

  1. International Conference on Optoelectronic Science and Engineering '90, Beijing, People's Republic of China, Aug. 22-25, 1990, Proceedings

    NASA Astrophysics Data System (ADS)

    Wang, Da-Heng

    1990-07-01

    Recent advances in optoelectronic technology are discussed, with an emphasis on developments in the People's Republic of China. Sections are devoted to new optoelectronic, electrooptic, acoustooptic, and magnetooptic devices and modulators; intelligent optoelectronic sensors; optoelectronic test and analysis equipment; lasers and their applications; IR optics and low-light-level technology; and fiber-optic devices. Also considered are photovoltaic technology and solar-energy systems, hybrid systems for image processing, optical-disk information storage and retrieval, optical bistability and optical computing, pattern recognition and robot vision, and the application of artificial intelligence to optical equipment. Diagrams, drawings, graphs, and sample images are provided.

  2. Tracking control strategy for the optoelectronic system on the flexible suspended platform based on backstepping method

    NASA Astrophysics Data System (ADS)

    Yu, Wei; Ma, Jiaguang; Xiao, Jing

    2012-10-01

    To improve the optoelectronic tracking ability and rope-hanged platform attitude stability, against the interact effect between rope-hanged platform and optoelectronic system during system tracking process, the optoelectronic system fixed on rope hanged platform simplified dynamic model, according to the system's Lagrange dynamic model, was established. Backstepping method was employed to design an integrated controller for both optoelectronic system azimuth direction steering and platform attitude stabilizing. To deal with model's uncertainty and disturbance, a sliding mode controller form based exponential reaching law was adopted to structure the integrated controller. Simulation experiments simulated an optoelectronic system with 600mm caliber telescope, whose inertia fluctuation is 6%. The maximal control moment is 15Nm. And the external disturbance and internal friction effected together. When the line of sight(LOS) azimuth angular input is a step signal with 1rad amplitude, the response's overshoot is 6%, and the response time is 6.2s, and the steady state error is less than 4×10-4rad. When the input is a sinusoidal signal of 0.2rad amplitude with 0.0318Hz frequency, the LOS azimuth angular error amplitude is 5. 6×10-4rad. It is concluded that the controller designed in this article has excellent ability and can ensure the system's stability.

  3. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    SciTech Connect

    Wang, Hsin-Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; Hettick, Mark; Zheng, Maxwell; Lien, Der-Hsien; Miller, D. Westley; Warren, Charles W.; Roe, Ellis T.; Lonergan, Mark C.; Guthrey, Harvey L.; Haegel, Nancy M.; Ager, Joel W.; Carraro, Carlo; Maboudian, Roya; He, Jr-Hau; Javey, Ali

    2016-07-12

    The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy was used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the relative intragap defect density by 1 order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV and reduced the variance in VOC for the analyzed devices.

  4. Fully Stretchable Optoelectronic Sensors Based on Colloidal Quantum Dots for Sensing Photoplethysmographic Signals.

    PubMed

    Kim, Tae-Ho; Lee, Chang-Seok; Kim, Sangwon; Hur, Jaehyun; Lee, Sangmin; Shin, Keun Wook; Yoon, Young-Zoon; Choi, Moon Kee; Yang, Jiwoong; Kim, Dae-Hyeong; Hyeon, Taeghwan; Park, Seongjun; Hwang, Sungwoo

    2017-06-27

    Flexible and stretchable optoelectronic devices can be potentially applied in displays, biosensors, biomedicine, robotics, and energy generation. The use of nanomaterials with superior optical properties such as quantum dots (QDs) is important in the realization of wearable displays and biomedical devices, but specific structural design as well as selection of materials should preferentially accompany this technology to realize stretchable forms of these devices. Here, we report stretchable optoelectronic sensors manufactured using colloidal QDs and integrated with elastomeric substrates, whose optoelectronic properties are stable under various deformations. A graphene electrode is adopted to ensure extreme bendability of the devices. Ultrathin QD light-emitting diodes and QD photodetectors are transfer-printed onto a prestrained elastomeric layout to form wavy configurations with regular patterns. The layout is mechanically stretchable until the structure is converted to a flat configuration. The emissive and active area itself can be stretched or compressed by buckled structures, which are applicable to wearable electronic devices. We demonstrate that these stretchable optoelectronic sensors can be used for continuous monitoring of blood waves via photoplethysmography signal recording. These and related systems create important and unconventional opportunities for stretchable and foldable optoelectronic devices with health-monitoring capability and, thus, meet the demand for wearable and body-integrated electronics.

  5. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    SciTech Connect

    Wang, Hsin -Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; Hettick, Mark; Zheng, Maxwell; Lien, Der -Hsien; Miller, D. Westley; Warren, Charles W.; Roe, Ellis T.; Lonergan, Mark C.; Guthrey, Harvey L.; Haegel, Nancy M.; Ager, Joel W.; Carraro, Carlo; Maboudian, Roya; He, Jr -Hau; Javey, Ali

    2016-06-08

    The thin-film vapor–liquid–solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy was used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the relative intragap defect density by 1 order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV and reduced the variance in VOC for the analyzed devices.

  6. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    DOE PAGES

    Wang, Hsin -Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; ...

    2016-06-08

    The thin-film vapor–liquid–solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy was used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces themore » relative intragap defect density by 1 order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV and reduced the variance in VOC for the analyzed devices.« less

  7. Fabrication and characterization of ultrafast superconducting optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Adam, Roman

    This thesis describes the complete design, simulation, fabrication, and measurement of high-temperature superconducting optoelectronic devices, intended for conversion of subpicosecond optical pulses into a train of subterahertz bandwidth single flux quantum (SFQ) voltage pulses. Our experimental test structures were patterned in 100- nm-thick YBa 2Cu3O7-x (YBCO) films grown by pulsed laser ablation on (100) MgO bicrystal substrates. Each sample consisted of a coplanar strip transmission line, a microbridge acting as the electrical pulse generator, and up to four Josephson junctions, acting as the pulse shaping circuit. Simulations of our device performance were carried out using numerical analysis based on the resistively and capacitively shunted Josephson junction equivalent circuit. The simulations showed strong dependence of the device response on the input pulse parameters, junction dc bias, loop inductance, and the inductance associated with the junction electrodes (leads). To generate the device input, a train of 100-fs-wide optical pulses from a Ti:sapphire laser photo-excited the superconducting YBCO microbridge and generated 2-ps-wide electrical pulses. The pulses were then used to switch the junction. In addition to the input pulse, junctions were dc-biased at +0.7 Ic, -0.7 Ic, +1.5 Ic, -1.5 Ic and zero- Ic. The time-resolved dynamics of the junction response was measured with the help of our cryogenic electro-optic sampling system, featuring <200-fs time resolution and <150-μV voltage sensitivity. In structures containing a single Josephson junction we obtained 0.65-ps-wide SFQ pulses, generated due to the junction switching process. The response of the multiple- junction devices was dominated by ~0.5-THz oscillatory transient, which corresponded to the resonant frequency of the circuit formed by the double-junction loop and the transmission line capacitance. Junction turn-on delay time observed experimentally was significantly longer than that

  8. Mapping and manipulating optoelectronic processes in emerging photovoltaic materials

    NASA Astrophysics Data System (ADS)

    Leblebici, Sibel Yontz

    The goal of the work in this dissertation is to understand and overcome the limiting optoelectronic processes in emerging second generation photovoltaic devices. There is an urgent need to mitigate global climate change by reducing greenhouse gas emissions. Renewable energy from photovoltaics has great potential to reduce emissions if the energy to manufacture the solar cell is much lower than the energy the solar cell generates. Two emerging thin film solar cell materials, organic semiconductors and hybrid organic-inorganic perovskites, meet this requirement because the active layers are processed at low temperatures, e.g. 150 °C. Other advantages of these two classes of materials include solution processability, composted of abundant materials, strongly light absorbing, highly tunable bandgaps, and low cost. Organic solar cells have evolved significantly from 1% efficient devices in 1989 to 11% efficient devices today. Although organic semiconductors are highly tunable and inexpensive, the main challenges to overcome are the large exciton binding energies and poor understanding of exciton dynamics. In my thesis, I optimized solar cells based on three new solution processable azadipyrromethene-based small molecules. I used the highest performing molecule to study the effect of increasing the permittivity of the material by incorporating a high permittivity small molecule into the active layer. The studies on two model systems, small donor molecules and a polymer-fullerene bulk heterojunction, show that Frenkel and charge transfer exciton binding energies can be manipulated by controlling permittivity, which impacts the solar cell efficiency. Hybrid organic-inorganic perovskite materials have similar advantages to organic semiconductors, but they are not excitonic, which is an added advantage for these materials. Although photovoltaics based on hybrid halide perovskite materials have exceeded 20% efficiency in only a few years of optimization, the loss mechanisms

  9. Optoelectronic Tool Adds Scale Marks to Photographic Images

    NASA Technical Reports Server (NTRS)

    Stevenson, Charlie; Rivera, Jorge; Youngquist, Robert; Cox, Robert; Haskell, William

    2003-01-01

    A simple, easy-to-use optoelectronic tool projects scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The role played by the scale marks projected by this tool is the same as that of the scale marks on a ruler placed in a scene for the purpose of establishing a length scale. However, this tool offers the advantage that it can put scale marks quickly and safely in any visible location, including a location in which placement of a ruler would be difficult, unsafe, or time-consuming. The tool (see Figure 1) includes an aluminum housing, within which are mounted four laser diodes that operate at a wavelength of 670 nm. The laser diodes are spaced 1 in. (2.54 cm) apart along a baseline. The laser diodes are mounted with setscrews, which are used to adjust their beams to make them all parallel to each other and perpendicular to the baseline. During the adjustment process, the effect of the adjustments is observed by measuring the positions of the laser-beam spots on a target 80 ft (approx.24 m) away. Once the adjustments have been completed, the laser beams define three 1-in. (2.54-cm) intervals and the location of each beam is defined to within 1/16 in. (approx.1.6 mm) at any target distance out to about 80 ft (approx.24 m). The distance between the laser-beam spots as seen in an image is strictly defined only along an axis parallel to the baseline and perpendicular to the laser beam (also perpendicular to the line of sight of the camera, assuming that the camera-to-target distance is much greater than the distance between the tool and the camera lens). If a flat target surface illuminated by the laser beams is tilted with respect to the aforesaid axis, then the distance along the target surface between scale marks is proportional to the secant of the tilt angle. If one knows the tilt angle, one can correct for it. Even

  10. Growth, Optical Properties, and Optimization of Infrared Optoelectronic Materials

    NASA Astrophysics Data System (ADS)

    Webster, Preston Thomas

    High-performance III-V semiconductors based on ternary alloys and superlattice systems are fabricated, studied, and compared for infrared optoelectronic applications. InAsBi is a ternary alloy near the GaSb lattice constant that is not as thoroughly investigated as other III-V alloys and that is challenging to produce as Bi has a tendency to surface segregate and form droplets during growth rather than incorporate. A growth window is identified within which high-quality droplet-free bulk InAsBi is produced and Bi mole fractions up to 6.4% are obtained. Photoluminescence with high internal quantum efficiency is observed from InAs/InAsBi quantum wells. The high structural and optical quality of the InAsBi materials examined demonstrates that bulk, quantum well, and superlattice structures utilizing InAsBi are an important design option for efficient infrared coverage. Another important infrared material system is InAsSb and the strain-balanced InAs/InAsSb superlattice on GaSb. Detailed examination of X-ray diffraction, photoluminescence, and spectroscopic ellipsometry data provides the temperature and composition dependent bandgap of bulk InAsSb. The unintentional incorporation of approximately 1% Sb into the InAs layers of the superlattice is measured and found to significantly impact the analysis of the InAs/InAsSb band alignment. In the analysis of the absorption spectra, the ground state absorption coefficient and transition strength of the superlattice are proportional to the square of the electron-hole wavefunction overlap; wavefunction overlap is therefore a major design parameter in terms of optimizing absorption in these materials. Furthermore in addition to improvements through design optimization, the optical quality of the materials studied is found to be positively enhanced with the use of Bi as a surfactant during molecular beam epitaxy growth. A software tool is developed that calculates and optimizes the miniband structure of semiconductor

  11. Photonic crystal cavities for spectrally-selective optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Yang, Hongjun

    Photonic crystal (PC) structures exhibit unconventional dispersion and refractive properties making possible hitherto not realizable optical and optoelectronic devices with high spectral selectivity. Functional PC devices (e.g., optical filters, reflectors, and photo detectors and light emitters) on both Si and III-V semiconductor material systems were fabricated via E-Beam lithography (EBL). The device layer can be further transferred onto foreign substrates such as glass or plastic (PET), using a low-cost "wet nanomembrane transfer technique" developed in this study. The broadband membrane reflectors (MR) based on Fano resonances in patterned silicon nanomembranes have been demonstrated. Resonance control of the reflectors was realized either by partially removing buried oxide layer underneath the device layer, or by controlled SiO2 film deposition on the top of the devices. Both blue- and red-shifts were demonstrated with a turning range of 50 nm for a center wavelength at 1550 nm. These results demonstrate practical post-process means for Fano resonance engineering for both narrow band filters and ultra-compact broadband reflectors. An optically pumped resonance cavity light emitting device (RCLED) with Si based membrane reflectors (MR) has been demonstrated experimentally. The stimulated cavity mode at 1545 nm was observed at room temperature with a pulsed green pumping laser light source. We observed significant spectral narrowing in RCLEDs with linewidth reduced from 50 nm down to <4 nm, owing to the presence of top and bottom MR reflectors. The measured photoluminescence efficiency also increased by a factor of 100 in RCLEDs, as compared to the value measured from as-grown InGaAsP QW structures on InP substrate. The mode shifts were also investigated over different temperatures and different pumping power levels. An InGaAsP QW LED array device was also fabricated and transferred onto flexible PET substrate. The devices showed very good electrical and

  12. Nonlinear optical and optoelectronic studies of topological insulator surfaces

    NASA Astrophysics Data System (ADS)

    McIver, James W.

    Since their experimental discovery in 2008, topological insulators have been catapulted to the forefront of condensed matter physics research owing to their potential to realize both exciting new technologies as well as novel electronic phases that are inaccessible in any other material class. Their exotic properties arise from a rare quantum organization of its electrons called "topological order,'' which evades the conventional broken symmetry based-classification scheme used to categorize nearly every other state of ordered matter. Instead, topologically ordered phases are classified by topological invariants, which characterize the phase of an electron's wavefunction as it moves through momentum space. When a topologically ordered phase is interfaced with an ordinary phase, such as the vacuum, a novel metallic state appears at their shared boundary. In topological insulators, this results in the formation of a two-dimensional metallic state that spans all of its surfaces. The surface state electronic spectrum is characterized by a single linearly dispersing and helically spin-polarized Dirac cone that is robust against disorder. The helical nature of the surface Dirac cone is highly novel because the Dirac electrons carry a net magnetic moment and are capable of transporting 100% spin-polarized electrical currents, which are the long-sought electronic properties needed for many spin-based electronic applications. However, owing to the small bulk band gap and intrinsic electronic doping inherent to these materials, isolating the surface electronic response from the bulk has proven to be a major experimental obstacle. In this thesis, we demonstrate the means by which light can be used to isolate and study the surface electronic response of topological insulators using optoelectronic and nonlinear optical techniques. In chapter 1, we overview the physics of topological order and topological insulators. In chapter 2, we show how polarized light can be used to

  13. Investigations in optoelectronic image processing in scanning laser microscopy

    NASA Astrophysics Data System (ADS)

    Chaliha, Hiranya Kumar

    based recording and measurement of optoelectronic signal from the detector in scanning system has also been designed. Chapter 2, Part B describes the details of this microprocessor based recording system. In Chapter 3, we have investigated different image processing modes in search for novel information, better resolution and more faithful frequency content of image after a brief introduction of the advances already made in this field. Coded aperture processing close to focused spot of laser.

  14. Zinc oxide thin films and nanostructures for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Yun, Juhyung

    The objective of this research focuses on investigating optical, electrical, and structural properties of Al doped ZnO (AZO) and developing novel approaches to demonstrate and improve the photovoltaics and photodetectors by introducing AZO nanoscaled structures. ZnO has been widely studied for optoelectronic applications such as light emitting diodes, lasers and photodiodes covering the ultraviolet spectrum because of its wide and direct bandgap and high exciton binding energy. In this research, aluminum doped ZnO films were grown by a dual beam sputtering method which is a combination of RF sputtered ZnO and DC sputtered Al. Various approaches were applied to characterize its optical, electrical and structural modulation in terms of growth parameters and doping parameters. As an n-type dopant, Al doping was controlled from 5x016 to 5x0 20 cm-3 maintaining visible transparency with a wider transparency as Al increased, and high mobility ( 2 ˜ 14 cm2/V.s). For the optoelectric applications, a ZnO/Si heterojunction was demonstrated and studied regarding Al doping effects on the anisotype and isotype junction. An unlikely conventional photovoltaic structure suggested the ZnO/Si solar cell to be advantageous in terms of low cost fabrication process -- low temperature, no diffusion, and large area processing. In this structure, AZO plays a role as a transparent current spreading layer and rectifying junction with silicon (Si). Furthermore, by introducing metal nanostructures inside of the AZO film, light harvesting was enhanced because of plasmonic and light scattering effects ensuring minimized electrical and optical loss within the AZO. To improve photovoltaic performance, a transparent and conductive nanolens array was embedded on ITO film and employed on a conventional Si solar cell using large scale nanoimprint method. The proposed structure provides superior optical transparency beyond 700 nm of wavelength and omnidirectional broadband low reflectivity as well as

  15. Computational design of surfaces, nanostructures and optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Choudhary, Kamal

    Properties of engineering materials are generally influenced by defects such as point defects (vacancies, interstitials, substitutional defects), line defects (dislocations), planar defects (grain boundaries, free surfaces/nanostructures, interfaces, stacking faults) and volume defects (voids). Classical physics based molecular dynamics and quantum physics based density functional theory can be useful in designing materials with controlled defect properties. In this thesis, empirical potential based molecular dynamics was used to study the surface modification of polymers due to energetic polyatomic ion, thermodynamics and mechanics of metal-ceramic interfaces and nanostructures, while density functional theory was used to screen substituents in optoelectronic materials. Firstly, polyatomic ion-beams were deposited on polymer surfaces and the resulting chemical modifications of the surface were examined. In particular, S, SC and SH were deposited on amorphous polystyrene (PS), and C2H, CH3, and C3H5 were deposited on amorphous poly (methyl methacrylate) (PMMA) using molecular dynamics simulations with classical reactive empirical many-body (REBO) potentials. The objective of this work was to elucidate the mechanisms by which the polymer surface modification took place. The results of the work could be used in tailoring the incident energy and/or constituents of ion beam for obtaining a particular chemistry inside the polymer surface. Secondly, a new Al-O-N empirical potential was developed within the charge optimized many body (COMB) formalism. This potential was then used to examine the thermodynamic stability of interfaces and mechanical properties of nanostructures composed of aluminum, its oxide and its nitride. The potentials were tested for these materials based on surface energies, defect energies, bulk phase stability, the mechanical properties of the most stable bulk phase, its phonon properties as well as with a genetic algorithm based evolution theory of

  16. Modulating the Optoelectronic Properties of Silver Nanowires Films: Effect of Capping Agent and Deposition Technique

    PubMed Central

    Lopez-Diaz, D.; Merino, C.; Velázquez, M. M.

    2015-01-01

    Silver nanowires 90 nm in diameter and 9 µm in length have been synthesized using different capping agents: polyvinyl pyrrolidone (PVP) and alkyl thiol of different chain lengths. The nanowire structure is not influenced by the displacement of PVP by alkyl thiols, although alkyl thiols modify the lateral aggregation of nanowires. We examined the effect of the capping agent and the deposition method on the optical and electrical properties of films prepared by Spray and the Langmuir-Schaefer methodologies. Our results revealed that nanowires capped with PVP and C8-thiol present the best optoelectronic properties. By using different deposition techniques and by modifying the nanowire surface density, we can modulate the optoelectronic properties of films. This strategy allows obtaining films with the optoelectronic properties required to manufacture touch screens and electromagnetic shielding. PMID:28793665

  17. Light-driven strong spin valve effects in an azobenzene-based spin optoelectronic device

    NASA Astrophysics Data System (ADS)

    Zeng, Jing; Chen, Ke-Qiu; Deng, Xiaohui; Long, Mengqiu

    2016-10-01

    A photoswitched single-molecule junction, a stable and reversible single-molecule electrical switch, has been successfully prepared by means of molecular engineering (2016 Science 352 1443). In this work we use a first-principles computational approach to investigate the spin valve effect of an azobenzene-based spin optoelectronic device. Our results demonstrate that the magnetoresistive ratio of the spin optoelectronic device is only about 65% when the azobenzene is in cis configuration, which is a low performance for practical applications. However, the magnetoresistive ratio of the device can be enhanced to about 2775% when the cis configuration of the azobenzene is changed into the trans configuration by applying a pulse of light. As a consequence, photoexcitation provides an effective way to obtain a high-performance spin optoelectronic device.

  18. Recent advances in amorphous and microcrystalline silicon basis devices for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Hamakawa, Yoshihiro

    1999-04-01

    The current state of the art in recent advances hydrogenated amorphous and microcrystalline silicon (a-Si and μc-Si) technologies and their applications to optoelectronic devices are reviewed. With the recent progress in material preparation and characterization technologies, we now have an age that considerably high quality thin films having valency electron controllability can be produced. In this paper, recent progress in thin film solar cell fabrication with a-Si and μc-Si technologies for active materials for optoelectronic devices are reviewed first, and their significance are pointed out, then some typical newly developed devices such as integrated amorphous solar cells, flexible solar cells etc., are demonstrated. Secondly, new kinds of thin film light-emitting devices, including solid-state flat panel displays are introduced. In the final part of this paper, the remarkable industrial progress in the field of optoelectronics and the prospects of market expansion toward the 21st century are briefly discussed.

  19. Chaotic dynamics and synchronization in microchip solid-state lasers with optoelectronic feedback.

    PubMed

    Uchida, Atsushi; Mizumura, Keisuke; Yoshimori, Shigeru

    2006-12-01

    We experimentally observe the dynamics of a two-mode Nd:YVO4 microchip solid-state laser with optoelectronic feedback. The total laser output is detected and fed back to the injection current of the laser diode for pumping. Chaotic oscillations are observed in the microchip laser with optoelectronic self-feedback. We also observe the dynamics of two microchip lasers coupled mutually with optoelectronic link. The output of one laser is detected by a photodiode and the electronic signal converted from the laser output is sent to the pumping of the other laser. Chaotic fluctuation of the laser output is observed when the relaxation oscillation frequency is close to each other between the two microchip lasers. Synchronization of periodic wave form is also obtained when the microchip lasers have a single-longitudinal mode.

  20. Standard Cell-Based Implementation of a Digital Optoelectronic Neural-Network Hardware

    NASA Astrophysics Data System (ADS)

    Maier, Klaus D.; Beckstein, Clemens; Blickhan, Reinhard; Erhard, Werner

    2001-03-01

    A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.

  1. Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

    PubMed Central

    Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

    2016-01-01

    Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures. PMID:28335321

  2. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

    PubMed Central

    Botiz, Ioan; Stingelin, Natalie

    2014-01-01

    It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. PMID:28788568

  3. Standard cell-based implementation of a digital optoelectronic neural-network hardware.

    PubMed

    Maier, K D; Beckstein, C; Blickhan, R; Erhard, W

    2001-03-10

    A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.

  4. Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

    PubMed

    Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

    2014-12-21

    While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

  5. Highly conductive transparent organic electrodes with multilayer structures for rigid and flexible optoelectronics.

    PubMed

    Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

    2015-05-27

    Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric-metal-dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq(-1) at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices.

  6. Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

    SciTech Connect

    Tripathi, Madhvendra Nath

    2015-06-24

    Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In{sub 32-x}Sn{sub x}O{sub 48+x/2}; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom of conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.

  7. Accelerating tomorrow's opto-electronic technologies: a comprehensive introduction to advanced optoelectronic materials and devices in the National Hi-Tech R&D Plan (863-Plan)

    NASA Astrophysics Data System (ADS)

    Jiang, Shan; Chen, Haoming; Ren, Xiaomin; Wang, Zhigong; Qian, Longsheng; Zhang, Rong; Feng, Songlin; Yang, Hui; Xu, Ningsheng

    2004-05-01

    The National Hi-Tech R&D Program (the 863-Program) is to enhance China's international competitiveness and improve China's overall capability of R&D in high technology and to bridge the gap between the laboratory and the marketplace. Advanced Optoelectronic Materials and Devices are one of the technology areas strategically important to China's information industry. It has been one of the major priority research fields funded by the 863 Program even since 1987 when the plan was first initiated. From the viewpoint of Priority Expert Group (PEG), this paper will give a comprehensive introduction to advanced optoelectronic materials and devices in the national 863-Program during the current five years period (up to 2005) which includes the main aims and goals and especially the main content of each subject.

  8. Optoelectronic-based face recognition versus electronic PCA-based face recognition

    NASA Astrophysics Data System (ADS)

    Alsamman, A.

    2003-11-01

    Face recognition based on principal component analysis (PCA) using eigenfaces is popular in face recognition markets. In this paper we present a comparison between various optoelectronic face recognition techniques and principal component analysis (PCA) based technique for face recognition. Computer simulations are used to study the effectiveness of PCA based technique especially for facial images with a high level of distortion. Results are then compared to various distortion-invariant optoelectronic face recognition algorithms such as synthetic discriminant functions (SDF), projection-slice SDF, optical correlator based neural networks, and pose estimation based correlation.

  9. Hybrid nanostructures using pi-conjugated polymers and nanoscale metals: synthesis, characteristics, and optoelectronic applications.

    PubMed

    Park, Dong Hyuk; Kim, Mi Suk; Joo, Jinsoo

    2010-07-01

    Pi-conjugated organic systems have been used as optoelectronic and sensing materials due to their characteristics of efficient light emission or absorption, and p-type charge transport. The hybrid nanostructures of pi-conjugated organic systems with nanoscale metals offer surface plasmon (SP)-enhanced luminescence, which can be applied to organic-based optoelectronics, photonics, and sensing. Various hybrid nanostructures using light-emitting polymers with nanoscale metals have been fabricated and have shown considerable enhancement of photoluminescence efficiency due to energy and charge transfer effects in SP resonance coupling. In this tutorial review, recent conceptual and technological achievements in light-emitting polymers-based hybrid nanostructures are described.

  10. Semiconductor laser amplifier and its optoelectronic properties for application in lightwave communication systems

    NASA Astrophysics Data System (ADS)

    Luc, V. V.; Eliseev, Petr G.; Man'ko, M. A.; Tsotsoriya, M. V.

    1992-12-01

    Output power and fiber-to-fiber gain along with infernal gain of the active element and optoelectronic signal curves at different values of input power versus pumping current are measured for the amplifier modules on the base of AR-coated InGaAsP/InP BH diodes. It is shown that diagnostics of the amplifier module oper''ation regime may be performed by voltage measurements and the optoelectronic signal can be used to monitor optical information passage in the regenerator device or for the distributed access the data transmitted in the lightwave comrnunicat ion systems. I.

  11. Design and construction of the high-speed optoelectronic memory system demonstrator.

    PubMed

    Barbieri, Roberto; Benabes, Philippe; Bierhoff, Thomas; Caswell, Josh J; Gauthier, Alain; Jahns, Jürgen; Jarczynski, Manfred; Lukowicz, Paul; Oksman, Jacques; Russell, Gordon A; Schrage, Jürgen; Snowdon, John F; Stübbe, Oliver; Troster, Gerhard; Wirz, Marco

    2008-07-01

    The high-speed optoelectronic memory system project is concerned with the reduction of latency within multiprocessor computer systems (a key problem) by the use of optoelectronics and associated packaging technologies. System demonstrators have been constructed to enable the evaluation of the technologies in terms of manufacturability. The system combines fiber, free space, and planar integrated optical waveguide technologies to augment the electronic memory and the processor components. Modeling and simulation techniques were developed toward the analysis and design of board-integrated waveguide transmission characteristics and optical interfacing. We describe the fabrication, assembly, and simulation of the major components within the system.

  12. Fundamental properties of PTCDI-C8 semiconductor for optoelectronic and photonic applications

    NASA Astrophysics Data System (ADS)

    Erdoǧan, Erman; Gündüz, Bayram

    2017-02-01

    In this study, we investigated fundamental properties such as electrical and optical properties of the N,N'-Dioctyl-3,4,9,10 perylenedicarboximide (PTCDI-C8) Organic Semiconductor (OSC) material for optoelectronic and photonic applications. The important spectral parameters such as mass extinction coefficient and transmittance spectrum of the PTCDI-C8 molecule were calculated. Optical properties such as refractive index, optical band gap, real and imaginary parts of dielectric constants of the PTCDI-C8 were obtained. The electrical and optical conductance properties were also investigated. The advantages and disadvantages of obtained fundamental parameters were determined for optoelectronic and photonic applications.

  13. A new switching parameter varying optoelectronic delayed feedback model with computer simulation

    PubMed Central

    Liu, Lingfeng; Miao, Suoxia; Cheng, Mengfan; Gao, Xiaojing

    2016-01-01

    In this paper, a new switching parameter varying optoelectronic delayed feedback model is proposed and analyzed by computer simulation. This model is switching between two parameter varying optoelectronic delayed feedback models based on chaotic pseudorandom sequences. Complexity performance results show that this model has a high complexity compared to the original model. Furthermore, this model can conceal the time delay effectively against the auto-correlation function, delayed mutual information and permutation information analysis methods, and can extent the key space, which greatly improve its security. PMID:26923101

  14. WARRP Core: Optoelectronic Implementation of Network-Router Deadlock-Handling Mechanisms.

    PubMed

    Pinkston, T M; Raksapatcharawong, M; Choi, Y

    1998-01-10

    The wormhole adaptive recovery-based routing via pre-emption(WARRP) core optoelectronic chip, which integrates coredeadlock-handling circuitry for a fully adaptive deadlock-freemultiprocessor network router, is presented. This chip demonstratesprimarily the integration of complex deadlock-recovery circuitry andfree-space optoelectronic input-output on a monolithicGaAs-based chip. The design and implementation of thefirst-generation, bit-serial, torus-connected chip that uses 1400transistors and six light-emitting diode-photodetector pairs is presented.

  15. Chemically derived graphene oxide: towards large-area thin-film electronics and optoelectronics.

    PubMed

    Eda, Goki; Chhowalla, Manish

    2010-06-11

    Chemically derived graphene oxide (GO) possesses a unique set of properties arising from oxygen functional groups that are introduced during chemical exfoliation of graphite. Large-area thin-film deposition of GO, enabled by its solubility in a variety of solvents, offers a route towards GO-based thin-film electronics and optoelectronics. The electrical and optical properties of GO are strongly dependent on its chemical and atomic structure and are tunable over a wide range via chemical engineering. In this Review, the fundamental structure and properties of GO-based thin films are discussed in relation to their potential applications in electronics and optoelectronics.

  16. Phase drift cancellation of remote radio frequency transfer using an optoelectronic delay-locked loop.

    PubMed

    Zhang, Lumin; Chang, Le; Dong, Yi; Xie, Weilin; He, Hao; Hu, Weisheng

    2011-03-15

    In this Letter, we propose a phase drift cancellation method for remote radio frequency transfer. Phase fluctuation along the transmission fiber, which is induced by temperature and pressure changes, is measured and compensated by a heterodyne optoelectronic delay-locked loop. The control loop consists of a heterodyne optoelectronic phase detector, a microwave delay module, and the loop filter. We demonstrate the concept by transmitting a 10 GHz microwave frequency over 50 km single-mode fiber, with subpicosecond jitters measured at the remote end.

  17. Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO2 Film.

    PubMed

    Fan, Lele; Chen, Yuliang; Liu, Qianghu; Chen, Shi; Zhu, Lei; Meng, Qiangqiang; Wang, Baolin; Zhang, Qinfang; Ren, Hui; Zou, Chongwen

    2016-12-07

    In this work, high-quality VO2 epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO2/GaN film device, we observed that the infrared transmittance and resistance of VO2 films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO2 in infrared range, an optoelectronic memory device was achieved. This memory device was operated under the "electrical writing-optical reading" mode, which shows promising applications in VO2-based optoelectronic device in the future.

  18. Piezophototronic Effect in Single-Atomic-Layer MoS 2 for Strain-Gated Flexible Optoelectronics

    SciTech Connect

    Wu, Wenzhuo; Wang, Lei; Yu, Ruomeng; Liu, Yuanyue; Wei, Su-Huai; Hone, James; Wang, Zhong Lin

    2016-08-03

    Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

  19. Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics.

    PubMed

    Wu, Wenzhuo; Wang, Lei; Yu, Ruomeng; Liu, Yuanyue; Wei, Su-Huai; Hone, James; Wang, Zhong Lin

    2016-10-01

    Strain-gated flexible optoelectronics are reported based on monolayer MoS2 . Utilizing the piezoelectric polarization created at the metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

  20. Interlayer exciton optoelectronics in a 2D heterostructure p–n junction

    SciTech Connect

    Ross, Jason S.; Rivera, Pasqual; Schaibley, John; Lee-Wong, Eric; Yu, Hongyi; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jiaqiang; Mandrus, David; Cobden, David; Yao, Wang; Xu, Xiaodong

    2016-12-22

    Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p–n junctions in a MoSe2–WSe2 heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p–n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. Lastly, these results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.