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Sample records for oversampled optoelectronic analog-digital

  1. On automatic synthesis of analog/digital circuits

    SciTech Connect

    Beiu, V.

    1998-12-31

    The paper builds on a recent explicit numerical algorithm for Kolmogorov`s superpositions, and will show that in order to synthesize minimum size (i.e., size-optimal) circuits for implementing any Boolean function, the nonlinear activation function of the gates has to be the identity function. Because classical and--or implementations, as well as threshold gate implementations require exponential size, it follows that size-optimal solutions for implementing arbitrary Boolean functions can be obtained using analog (or mixed analog/digital) circuits. Conclusions and several comments are ending the paper.

  2. Configurable analog-digital conversion using the neural engineering framework

    PubMed Central

    Mayr, Christian G.; Partzsch, Johannes; Noack, Marko; Schüffny, Rene

    2014-01-01

    Efficient Analog-Digital Converters (ADC) are one of the mainstays of mixed-signal integrated circuit design. Besides the conventional ADCs used in mainstream ICs, there have been various attempts in the past to utilize neuromorphic networks to accomplish an efficient crossing between analog and digital domains, i.e., to build neurally inspired ADCs. Generally, these have suffered from the same problems as conventional ADCs, that is they require high-precision, handcrafted analog circuits and are thus not technology portable. In this paper, we present an ADC based on the Neural Engineering Framework (NEF). It carries out a large fraction of the overall ADC process in the digital domain, i.e., it is easily portable across technologies. The analog-digital conversion takes full advantage of the high degree of parallelism inherent in neuromorphic networks, making for a very scalable ADC. In addition, it has a number of features not commonly found in conventional ADCs, such as a runtime reconfigurability of the ADC sampling rate, resolution and transfer characteristic. PMID:25100933

  3. A neurocomputer based on an analog-digital hybrid architecture

    NASA Technical Reports Server (NTRS)

    Moopenn, A.; Thakoor, A. P.; Duong, T.; Khanna, S. K.

    1987-01-01

    A novel analog-digital hybrid architecture based on the utilization of high density digital random access memories for the storage of the synaptic weights of a neural network, and high speed analog hardware to perform neural computation is described. An electronic neurocomputer based on such an architecture is ideally suited for investigating the dynamics, associative recall properties, and computational capabilities of neural networks and provides significant speed improvement in comparison to conventional software based neural network simulations. As a demonstration of the feasibility of the hybrid architectural concept, a prototype breadboard hybrid neurocomputer system with 32 neurons has been designed and fabricated with off-the-shelf hardware components. The performance of the breadboard system has been tested for variety of applications including associative memory and combinatorial problem solving such as Graph Coloring, and is discussed in this paper.

  4. Iterated oversampled filter banks and wavelet frames

    NASA Astrophysics Data System (ADS)

    Selesnick, Ivan W.; Sendur, Levent

    2000-12-01

    This paper takes up the design of wavelet tight frames that are analogous to Daubechies orthonormal wavelets - that is, the design of minimal length wavelet filters satisfying certain polynomial properties, but now in the oversampled case. The oversampled dyadic DWT considered in this paper is based on a single scaling function and tow distinct wavelets. Having more wavelets than necessary gives a closer spacing between adjacent wavelets within the same scale. As a result, the transform is nearly shift-invariant, and can be used to improve denoising. Because the associated time- frequency lattice preserves the dyadic structure of the critically sampled DWT it can be used with tree-based denoising algorithms that exploit parent-child correlation.

  5. Optical hybrid analog-digital signal processing based on spike processing in neurons

    NASA Astrophysics Data System (ADS)

    Fok, Mable P.; Tian, Yue; Rosenbluth, David; Deng, Yanhua; Prucnal, Paul R.

    2011-09-01

    Spike processing is one kind of hybrid analog-digital signal processing, which has the efficiency of analog processing and the robustness to noise of digital processing. When instantiated with optics, a hybrid analog-digital processing primitive has the potential to be scalable, computationally powerful, and have high operation bandwidth. These devices open up a range of processing applications for which electronic processing is too slow. Our approach is based on a hybrid analog/digital computational primitive that elegantly implements the functionality of an integrate-and-fire neuron using a Ge-doped non-linear optical fiber and off-the-shelf semiconductor devices. In this paper, we introduce our photonic neuron architecture and demonstrate the feasibility of implementing simple photonic neuromorphic circuits, including the auditory localization algorithm of the barn owl, which is useful for LIDAR localization, and the crayfish tail-flip escape response.

  6. BacNet and Analog/Digital Interfaces of the Building Controls Virtual Testbed

    SciTech Connect

    Nouidui, Thierry Stephane; Wetter, Michael; Li, Zhengwei; Pang, Xiufeng; Bhattachayra, Prajesh; Haves, Philip

    2011-11-01

    This paper gives an overview of recent developments in the Building Controls Virtual Test Bed (BCVTB), a framework for co-simulation and hardware-in-the- loop. First, a general overview of the BCVTB is presented. Second, we describe the BACnet interface, a link which has been implemented to couple BACnet devices to the BCVTB. We present a case study where the interface was used to couple a whole building simulation program to a building control system to assess in real-time the performance of a real building. Third, we present the ADInterfaceMCC, an analog/digital interface that allows a USB-based analog/digital converter to be linked to the BCVTB. In a case study, we show how the link was used to couple the analog/digital converter to a building simulation model for local loop control.

  7. Small pixel oversampled IR focal plane arrays

    NASA Astrophysics Data System (ADS)

    Caulfield, John; Curzan, Jon; Lewis, Jay; Dhar, Nibir

    2015-06-01

    We report on a new high definition high charge capacity 2.1 Mpixel MWIR Infrared Focal Plane Array. This high definition (HD) FPA utilizes a small 5 um pitch pixel size which is below the Nyquist limit imposed by the optical systems Point Spread Function (PSF). These smaller sub diffraction limited pixels allow spatial oversampling of the image. We show that oversampling IRFPAs enables improved fidelity in imaging including resolution improvements, advanced pixel correlation processing to reduce false alarm rates, improved detection ranges, and an improved ability to track closely spaced objects. Small pixel HD arrays are viewed as the key component enabling lower size, power and weight of the IR Sensor System. Small pixels enables a reduction in the size of the systems components from the smaller detector and ROIC array, the reduced optics focal length and overall lens size, resulting in an overall compactness in the sensor package, cooling and associated electronics. The highly sensitive MWIR small pixel HD FPA has the capability to detect dimmer signals at longer ranges than previously demonstrated.

  8. Object Tracking by Oversampling Local Features.

    PubMed

    Pernici, Federico; Del Bimbo, Alberto

    2014-12-01

    In this paper, we present the ALIEN tracking method that exploits oversampling of local invariant representations to build a robust object/context discriminative classifier. To this end, we use multiple instances of scale invariant local features weakly aligned along the object template. This allows taking into account the 3D shape deviations from planarity and their interactions with shadows, occlusions, and sensor quantization for which no invariant representations can be defined. A non-parametric learning algorithm based on the transitive matching property discriminates the object from the context and prevents improper object template updating during occlusion. We show that our learning rule has asymptotic stability under mild conditions and confirms the drift-free capability of the method in long-term tracking. A real-time implementation of the ALIEN tracker has been evaluated in comparison with the state-of-the-art tracking systems on an extensive set of publicly available video sequences that represent most of the critical conditions occurring in real tracking environments. We have reported superior or equal performance in most of the cases and verified tracking with no drift in very long video sequences. PMID:26353156

  9. Oversampling the Minority Class in the Feature Space.

    PubMed

    Perez-Ortiz, Maria; Gutierrez, Pedro Antonio; Tino, Peter; Hervas-Martinez, Cesar

    2016-09-01

    The imbalanced nature of some real-world data is one of the current challenges for machine learning researchers. One common approach oversamples the minority class through convex combination of its patterns. We explore the general idea of synthetic oversampling in the feature space induced by a kernel function (as opposed to input space). If the kernel function matches the underlying problem, the classes will be linearly separable and synthetically generated patterns will lie on the minority class region. Since the feature space is not directly accessible, we use the empirical feature space (EFS) (a Euclidean space isomorphic to the feature space) for oversampling purposes. The proposed method is framed in the context of support vector machines, where the imbalanced data sets can pose a serious hindrance. The idea is investigated in three scenarios: 1) oversampling in the full and reduced-rank EFSs; 2) a kernel learning technique maximizing the data class separation to study the influence of the feature space structure (implicitly defined by the kernel function); and 3) a unified framework for preferential oversampling that spans some of the previous approaches in the literature. We support our investigation with extensive experiments over 50 imbalanced data sets.

  10. Oversampling the Minority Class in the Feature Space.

    PubMed

    Perez-Ortiz, Maria; Gutierrez, Pedro Antonio; Tino, Peter; Hervas-Martinez, Cesar

    2016-09-01

    The imbalanced nature of some real-world data is one of the current challenges for machine learning researchers. One common approach oversamples the minority class through convex combination of its patterns. We explore the general idea of synthetic oversampling in the feature space induced by a kernel function (as opposed to input space). If the kernel function matches the underlying problem, the classes will be linearly separable and synthetically generated patterns will lie on the minority class region. Since the feature space is not directly accessible, we use the empirical feature space (EFS) (a Euclidean space isomorphic to the feature space) for oversampling purposes. The proposed method is framed in the context of support vector machines, where the imbalanced data sets can pose a serious hindrance. The idea is investigated in three scenarios: 1) oversampling in the full and reduced-rank EFSs; 2) a kernel learning technique maximizing the data class separation to study the influence of the feature space structure (implicitly defined by the kernel function); and 3) a unified framework for preferential oversampling that spans some of the previous approaches in the literature. We support our investigation with extensive experiments over 50 imbalanced data sets. PMID:26316222

  11. The design, fabrication, and test of a new VLSI hybrid analog-digital neural processing element

    NASA Technical Reports Server (NTRS)

    Deyong, Mark R.; Findley, Randall L.; Fields, Chris

    1992-01-01

    A hybrid analog-digital neural processing element with the time-dependent behavior of biological neurons has been developed. The hybrid processing element is designed for VLSI implementation and offers the best attributes of both analog and digital computation. Custom VLSI layout reduces the layout area of the processing element, which in turn increases the expected network density. The hybrid processing element operates at the nanosecond time scale, which enables it to produce real-time solutions to complex spatiotemporal problems found in high-speed signal processing applications. VLSI prototype chips have been designed, fabricated, and tested with encouraging results. Systems utilizing the time-dependent behavior of the hybrid processing element have been simulated and are currently in the fabrication process. Future applications are also discussed.

  12. Nanowire Optoelectronics

    NASA Astrophysics Data System (ADS)

    Wang, Zhihuan; Nabet, Bahram

    2015-12-01

    Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes,"which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light inNWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

  13. An Analog-Digital Mixed Measurement Method of Inductive Proximity Sensor

    PubMed Central

    Guo, Yi-Xin; Shao, Zhi-Biao; Li, Ting

    2015-01-01

    Inductive proximity sensors (IPSs) are widely used in position detection given their unique advantages. To address the problem of temperature drift, this paper presents an analog-digital mixed measurement method based on the two-dimensional look-up table. The inductance and resistance components can be separated by processing the measurement data, thus reducing temperature drift and generating quantitative outputs. This study establishes and implements a two-dimensional look-up table that reduces the online computational complexity through structural modeling and by conducting an IPS operating principle analysis. This table is effectively compressed by considering the distribution characteristics of the sample data, thus simplifying the processing circuit. Moreover, power consumption is reduced. A real-time, built-in self-test (BIST) function is also designed and achieved by analyzing abnormal sample data. Experiment results show that the proposed method obtains the advantages of both analog and digital measurements, which are stable, reliable, and taken in real time, without the use of floating-point arithmetic and process-control-based components. The quantitative output of displacement measurement accelerates and stabilizes the system control and detection process. The method is particularly suitable for meeting the high-performance requirements of the aviation and aerospace fields. PMID:26729118

  14. An Analog-Digital Mixed Measurement Method of Inductive Proximity Sensor.

    PubMed

    Guo, Yi-Xin; Shao, Zhi-Biao; Li, Ting

    2015-01-01

    Inductive proximity sensors (IPSs) are widely used in position detection given their unique advantages. To address the problem of temperature drift, this paper presents an analog-digital mixed measurement method based on the two-dimensional look-up table. The inductance and resistance components can be separated by processing the measurement data, thus reducing temperature drift and generating quantitative outputs. This study establishes and implements a two-dimensional look-up table that reduces the online computational complexity through structural modeling and by conducting an IPS operating principle analysis. This table is effectively compressed by considering the distribution characteristics of the sample data, thus simplifying the processing circuit. Moreover, power consumption is reduced. A real-time, built-in self-test (BIST) function is also designed and achieved by analyzing abnormal sample data. Experiment results show that the proposed method obtains the advantages of both analog and digital measurements, which are stable, reliable, and taken in real time, without the use of floating-point arithmetic and process-control-based components. The quantitative output of displacement measurement accelerates and stabilizes the system control and detection process. The method is particularly suitable for meeting the high-performance requirements of the aviation and aerospace fields.

  15. Hybrid-integrated prism array optoelectronic targeting system

    NASA Astrophysics Data System (ADS)

    Chang, C. C.; Chang, H. C.; Tang, L. C.; Young, W. K.; Wang, J. C.; Huang, K. L.

    2005-11-01

    This investigation proposes a cost-effective, compact, and robust optoelectronic targeting system for measuring ballistic impact velocity and the distribution of projectile motion. The major elements of this system are four photo-gates hybridized by compound one-dimensional prism array and analog/digital electronic components. The number of light sources and photodetectors used in a photo-gate was reduced to one pair of light source and photodetector. The average velocity and location of the projectile are determined according to the measured time intervals ( ˜10 -8 s) passing each pair. The system can accurately measure the velocity of a bullet as it leaves a gun barrel, as well as the velocity at specific points along the trajectory outside the firearm. Additionally, the system uses a widespread low-powered laser pointer as a light source. Compared with other optoelectronic targeting systems that use high-powered lasers, the proposed system is both economical and safe.

  16. Optoelectronic device

    DOEpatents

    Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

    2014-09-09

    The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

  17. RACOG and wRACOG: Two Probabilistic Oversampling Techniques

    PubMed Central

    Das, Barnan; Krishnan, Narayanan C.; Cook, Diane J.

    2016-01-01

    As machine learning techniques mature and are used to tackle complex scientific problems, challenges arise such as the imbalanced class distribution problem, where one of the target class labels is under-represented in comparison with other classes. Existing oversampling approaches for addressing this problem typically do not consider the probability distribution of the minority class while synthetically generating new samples. As a result, the minority class is not well represented which leads to high misclassification error. We introduce two Gibbs sampling-based oversampling approaches, namely RACOG and wRACOG, to synthetically generating and strategically selecting new minority class samples. The Gibbs sampler uses the joint probability distribution of attributes of the data to generate new minority class samples in the form of Markov chain. While RACOG selects samples from the Markov chain based on a predefined lag, wRACOG selects those samples that have the highest probability of being misclassified by the existing learning model. We validate our approach using five UCI datasets that were carefully modified to exhibit class imbalance and one new application domain dataset with inherent extreme class imbalance. In addition, we compare the classification performance of the proposed methods with three other existing resampling techniques. PMID:27041974

  18. The development and demonstration of hybrid programmable attitude control electronics. [with adaptable analog/digital design approach

    NASA Technical Reports Server (NTRS)

    Smith, L. S.; Kopf, E. H., Jr.

    1974-01-01

    HYPACE provides an adaptable, analog/digital design approach that permits preflight and in-flight accommodation of mission changes, component performance variations, spacecraft changes, etc., through programing. This enabled broad multimission flexibility of application in a cost-effective manner. The HYPACE design, which was demonstrated in breadboard form on a single-axis gas-bearing spacecraft simulation, uses a single control channel to perform the attitude control functions sequentially, thus significantly reducing the number of component parts over hard-wired designs. The success of this effort resulted in the concept being selected for the Mariner/Jupiter/Saturn 1977 spacecraft application.

  19. High-accuracy fit of the poles of spectroscopy amplifiers designed for mixed analog-digital filtering

    SciTech Connect

    Bittanti, S.; Gatti, E.; Ripamonti, G.; Savaresi, S.M.

    1997-04-01

    In this paper, a method for the identification of the poles` and zeros` position of an analog amplifier for nuclear spectroscopy used as a prefilter for a subsequent digital filter setup is presented. The proposed technique is based upon a subspace-based system state-space identification (4SID) method, which is well suited to a data set constituted by a noisy measurement of the sampled impulse response of the circuit. The algorithm runs unassisted and does not require skills by the operator. The experiments confirm that by using the so-obtained pole values, the shape of the impulse response of the amplifier can be fit with much better than 1% accuracy. Consequently, the overall filtering (analog + digital) can have finite duration and a top with a flatness much better than 1%.

  20. High-dynamic-range hybrid analog-digital control broadband optical spectral processor using micromirror and acousto-optic devices.

    PubMed

    Riza, Nabeel A; Reza, Syed Azer

    2008-06-01

    For the first time, to the best of our knowledge, the design and demonstration of a programmable spectral filtering processor is presented that simultaneously engages the power of an analog-mode optical device such as an acousto-optic tunable filter and a digital-mode optical device such as the digital micromirror device. The demonstrated processor allows a high 50 dB attenuation dynamic range across the chosen 1530-1565 nm (~C band). The hybrid analog-digital spectral control mechanism enables the processor to operate with greater versatility when compared to analog- or digital-only processor designs. Such a processor can be useful both as a test instrument in biomedical applications and as an equalizer in fiber communication networks.

  1. Design and evaluation of a low-level RF control system analog/digital receiver for the ILC main Linacs

    SciTech Connect

    Mavric, Uros; Vidmar, Matjaz; Chase, Brian; /Fermilab

    2008-06-01

    The proposed RF distribution scheme for the two 15 km long ILC LINACs, uses one klystron to feed 26 superconducting RF cavities operating at 1.3 GHz. For a precise control of the vector sum of the signals coming from the SC cavities, the control system needs a high performance, low cost, reliable and modular multichannel receiver. At Fermilab we developed a 96 channel, 1.3 GHz analog/digital receiver for the ILC LINAC LLRF control system. In the paper we present a balanced design approach to the specifications of each receiver section, the design choices made to fulfill the goals and a description of the prototyped system. The design is tested by measuring standard performance parameters, such as noise figure, linearity and temperature sensitivity. Measurements show that the design meets the specifications and it is comparable to other similar systems developed at other laboratories, in terms of performance.

  2. Detecting target velocity and location using a novel optoelectronic sensing system

    NASA Astrophysics Data System (ADS)

    Chang, Chi Ching

    2004-12-01

    We propose a cost-effective, compact, and robust optoelectronic sensing system for measuring ballistic impact velocity and distribution of the projectile motion. The key elements consisted of this system are four photo-gates hybridized by compound one-dimensional prism array and analog/digital electronic components. The number of light sources and photodetectors used in a photo-gate was reduced to one pair of that. The time interval passing each pair can be measured precisely (~10-8 s). The average velocity and location of projectile are carried out according the measured time intervals. The system can precisely measure the velocity of a bullet as it leaves a gun barrel and the velocity toward the trajectory outside the firearm. Furthermore, the system uses a commonly found low-powered laser pointer as light source. Compared with other optoelectronic sensing systems that use high-powered lasers, our system is both economical and safe.

  3. Close-Packed Silicon Microelectrodes for Scalable Spatially Oversampled Neural Recording

    PubMed Central

    Scholvin, Jörg; Kinney, Justin P.; Bernstein, Jacob G.; Moore-Kochlacs, Caroline; Kopell, Nancy; Fonstad, Clifton G.; Boyden, Edward S.

    2015-01-01

    Objective Neural recording electrodes are important tools for understanding neural codes and brain dynamics. Neural electrodes that are close-packed, such as in tetrodes, enable spatial oversampling of neural activity, which facilitates data analysis. Here we present the design and implementation of close-packed silicon microelectrodes, to enable spatially oversampled recording of neural activity in a scalable fashion. Methods Our probes are fabricated in a hybrid lithography process, resulting in a dense array of recording sites connected to submicron dimension wiring. Results We demonstrate an implementation of a probe comprising 1000 electrode pads, each 9 × 9 μm, at a pitch of 11 μm. We introduce design automation and packaging methods that allow us to readily create a large variety of different designs. Significance Finally, we perform neural recordings with such probes in the live mammalian brain that illustrate the spatial oversampling potential of closely packed electrode sites. PMID:26699649

  4. Synchronization sampling method based on delta-sigma analog-digital converter for underwater towed array system

    NASA Astrophysics Data System (ADS)

    Jiang, Jia-Jia; Duan, Fa-Jie; Li, Yan-Chao; Hua, Xiang-Ning

    2014-03-01

    Synchronization sampling is very important in underwater towed array system where every acquisition node (AN) samples analog signals by its own analog-digital converter (ADC). In this paper, a simple and effective synchronization sampling method is proposed to ensure synchronized operation among different ANs of the underwater towed array system. We first present a master-slave synchronization sampling model, and then design a high accuracy phase-locked loop to synchronize all delta-sigma ADCs to a reference clock. However, when the master-slave synchronization sampling model is used, both the time-delay (TD) of messages traveling along the wired transmission medium and the jitter of the clocks will bring out synchronization sampling error (SSE). Therefore, a simple method is proposed to estimate and compensate the TD of the messages transmission, and then another effective method is presented to overcome the SSE caused by the jitter of the clocks. An experimental system with three ANs is set up, and the related experimental results verify the validity of the synchronization sampling method proposed in this paper.

  5. A hybrid analog-digital phase-locked loop for frequency mode non-contact scanning probe microscopy.

    PubMed

    Mehta, M M; Chandrasekhar, V

    2014-01-01

    Non-contact scanning probe microscopy (SPM) has developed into a powerful technique to image many different properties of samples. The conventional method involves monitoring the amplitude, phase, or frequency of a cantilever oscillating at or near its resonant frequency as it is scanned across the surface of a sample. For high Q factor cantilevers, monitoring the resonant frequency is the preferred method in order to obtain reasonable scan times. This can be done by using a phase-locked-loop (PLL). PLLs can be obtained as commercial integrated circuits, but these do not have the frequency resolution required for SPM. To increase the resolution, all-digital PLLs requiring sophisticated digital signal processors or field programmable gate arrays have also been implemented. We describe here a hybrid analog/digital PLL where most of the components are implemented using discrete analog integrated circuits, but the frequency resolution is provided by a direct digital synthesis chip controlled by a simple peripheral interface controller (PIC) microcontroller. The PLL has excellent frequency resolution and noise, and can be controlled and read by a computer via a universal serial bus connection. PMID:24517775

  6. Multiplexed Oversampling Digitizer in 65 nm CMOS for Column-Parallel CCD Readout

    SciTech Connect

    Grace, Carl; Walder, Jean-Pierre; von der Lippe, Henrik

    2012-04-10

    A digitizer designed to read out column-parallel charge-coupled devices (CCDs) used for high-speed X-ray imaging is presented. The digitizer is included as part of the High-Speed Image Preprocessor with Oversampling (HIPPO) integrated circuit. The digitizer module comprises a multiplexed, oversampling, 12-bit, 80 MS/s pipelined Analog-to-Digital Converter (ADC) and a bank of four fast-settling sample-and-hold amplifiers to instrument four analog channels. The ADC multiplexes and oversamples to reduce its area to allow integration that is pitch-matched to the columns of the CCD. Novel design techniques are used to enable oversampling and multiplexing with a reduced power penalty. The ADC exhibits 188 ?V-rms noise which is less than 1 LSB at a 12-bit level. The prototype is implemented in a commercially available 65 nm CMOS process. The digitizer will lead to a proof-of-principle 2D 10 Gigapixel/s X-ray detector.

  7. Optoelectronic Mounting Structure

    DOEpatents

    Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

    2004-10-05

    An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

  8. Advances in optoelectronic oscillators

    NASA Astrophysics Data System (ADS)

    Nguimdo, Romain M.; Saleh, Khaldoun; Lin, Guoping; Matinenghi, Romain; Chembo, Yanne K.

    2016-02-01

    Optoelectronic oscillators are used for a wide variety of applications in microwave photonics. We here report the latest advances in this technology from our research group, with emphasis on the analysis of phase noise performance. We present a stochastic modelling approach for phase noise performance analysis of optoelectronic oscillators based on whispering gallery mode resonators and/or optical fiber delay lines, and the theory is complemented with experimental measurements. We provide a detailed theoretical analysis which enables us to find the stationary states of the system as well as their stability. Our calculations also permit to find explicit formulas for the phase noise spectra, thereby allowing for their optimization.

  9. Optoelectronic integrated circuits

    NASA Astrophysics Data System (ADS)

    Forrest, Stephen R.

    1987-11-01

    The technology development requirements of several generic photonic systems for advanced optoelectronic ICs are currently being met by the fabrication of highly functional integrated transmitters, receivers, modulators, and arrays of such devices. Attention is presently given to illustrative examples of each of these, as well as of other 'archetypal' ICs. It is noted that the materials-growth techniques employed in optoelectronic IC structures constitute the foundation of their development hierarchy; the primary pacer of development progress is therefore the rapidity of advancements in epitaxial materials-growth technology.

  10. Optoelectronic packaging: A review

    SciTech Connect

    Carson, R.F.

    1993-09-01

    Optoelectronics and photonics hold great potential for high data-rate communication and computing. Wide using in computing applications was limited first by device technologies and now suffers due to the need for high-precision, mass-produced packaging. The use of phontons as a medium of communication and control implies a unique set of packaging constraints that was not present in traditional telecommunications applications. The state-of-the-art in optoelectronic packaging is now driven by microelectric techniques that have potential for low cost and high volume manufacturing.

  11. Employment of sawtooth-shaped-function excitation signal and oversampling for improving resistance measurement accuracy

    NASA Astrophysics Data System (ADS)

    Lin, Ling; Li, Shujuan; Yan, Wenjuan; Li, Gang

    2016-10-01

    In order to achieve higher measurement accuracy of routine resistance without increasing the complexity and cost of the system circuit of existing methods, this paper presents a novel method that exploits a shaped-function excitation signal and oversampling technology. The excitation signal source for resistance measurement is modulated by the sawtooth-shaped-function signal, and oversampling technology is employed to increase the resolution and the accuracy of the measurement system. Compared with the traditional method of using constant amplitude excitation signal, this method can effectively enhance the measuring accuracy by almost one order of magnitude and reduce the root mean square error by 3.75 times under the same measurement conditions. The results of experiments show that the novel method can attain the aim of significantly improve the measurement accuracy of resistance on the premise of not increasing the system cost and complexity of the circuit, which is significantly valuable for applying in electronic instruments.

  12. Real-time Nyquist signaling with dynamic precision and flexible non-integer oversampling.

    PubMed

    Schmogrow, R; Meyer, M; Schindler, P C; Nebendahl, B; Dreschmann, M; Meyer, J; Josten, A; Hillerkuss, D; Ben-Ezra, S; Becker, J; Koos, C; Freude, W; Leuthold, J

    2014-01-13

    We demonstrate two efficient processing techniques for Nyquist signals, namely computation of signals using dynamic precision as well as arbitrary rational oversampling factors. With these techniques along with massively parallel processing it becomes possible to generate and receive high data rate Nyquist signals with flexible symbol rates and bandwidths, a feature which is highly desirable for novel flexgrid networks. We achieved maximum bit rates of 252 Gbit/s in real-time.

  13. Optoelectronic techniques for broadband switching

    NASA Astrophysics Data System (ADS)

    Su, S. F.; Jou, L.; Lenart, J.

    1988-01-01

    Optoelectronic switching employs a hybrid optical/electronic principle to perform the switching function and is applicable for either analog broadband or high-bit rate digital switching. The major advantages of optoelectronic switching include high isolation, low crosstalk, small physical size, light weight, and low power consumption. These advantages make optoelectronic switching an excellent candidate for on-board satellite switching. This paper describes a number of optoelectronic switching architectures. System components required for implementing these switching architectures are discussed. Performance of these architectures are evaluated by calculating their crosstalk, isolation, insertion loss, matrix size, drive power, throughput, and switching speed. Technologies needed for monolithic optoelectronic switching are also identified.

  14. Picosecond optoelectronic devices

    SciTech Connect

    Lee, C.L.

    1984-01-01

    Ever since the invention of picosecond lasers, scientists and electronic engineers have been dreaming of inventing electronic devices that can record in real time the physical and electronic events that take place on picosecond time scales. With the exception of the expensive streak camera, this dream has been largely unfullfilled. Today, a real-time oscilloscope with picosecond time resolution is still not available. To fill the need for even better time resolution, researchers have turned to optical pulses and thus a hybrid technology has emerged-picosecond optoelectronics. This technology, based on bulk photoconductors, has had a slow start. However, because of the simplicity, scaleability, and jitterfree nature of the devices, the technology has recently experienced a rapid growth. This volume reviews the major developments in the field of picosecond optoelectronics over the past decade.

  15. Towards optoelectronic urea biosensors.

    PubMed

    Pokrzywnicka, Marta; Koncki, Robert; Tymecki, Łukasz

    2015-03-01

    Integration of immobilized enzymes with light-emitting diodes (LEDs) leads to the development of optoelectronic enzyme-based biosensors. In this work, urease, used as a model enzyme, immobilized in the form of an open-tubular microbioreactor or biosensing membrane that has been integrated with two red LEDs. It forms complete, fiberless, miniaturized, and extremely economic biooptoelectronic devices useful for nonstationary measurements under flow analysis conditions. Both enzyme-based biodevices, operating according to the paired emitter detector diode (PEDD) principle, allow relatively fast, highly sensitive, and well-reproducible urea detection in the millimolar range of concentrations. Potential analytical applications of the developed urea bioPEDDs have been announced. Both presented constructions will be easily adapted for the development of other optoelectronic biosensors exploring various enzyme-based schemes of biodetection. PMID:25619983

  16. Monolithic Optoelectronic Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Walters, Wayne; Gustafsen, Jerry; Bendett, Mark

    1990-01-01

    Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.

  17. Complexation of Optoelectronic Systems

    NASA Astrophysics Data System (ADS)

    Boreisho, A. S.; Il‧in, M. Yu.; Konyaev, M. A.; Mikhailenko, A. S.; Morozov, A. V.; Strakhov, S. Yu.

    2016-05-01

    Problems of increasing the efficiency and the functionality of complex optoelectronic systems for monitoring real atmospheric conditions and of their use are discussed. It is shown by the example of a meteorological complex comprising an infrared wind-sensing lidar and an X-range Doppler radar that the complexation of probing systems working in different electromagnetic-radiation ranges opens up new opportunities for determining the meteorological parameters of a turbulent atmosphere and investigating the interaction of radiation with it.

  18. Optoelectronic reservoir computing.

    PubMed

    Paquot, Y; Duport, F; Smerieri, A; Dambre, J; Schrauwen, B; Haelterman, M; Massar, S

    2012-01-01

    Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an optoelectronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations.

  19. Optoelectronic Reservoir Computing

    NASA Astrophysics Data System (ADS)

    Paquot, Y.; Duport, F.; Smerieri, A.; Dambre, J.; Schrauwen, B.; Haelterman, M.; Massar, S.

    2012-02-01

    Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an optoelectronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations.

  20. Optoelectronic technology consortium

    NASA Astrophysics Data System (ADS)

    Hibbs-Brenner, Mary

    1992-12-01

    The Optoelectronics Technology Consortium has been established to position U.S. industry as the world leader in optical interconnect technology by developing, fabricating, intergrating and demonstrating the producibility of optoelectronic components for high-density/high-data-rate processors and accelerating the insertion of this technology into military and commercial applications. This objective will be accomplished by a program focused in three areas. (1) Demonstrated performance: OETC will demonstrate an aggregate data transfer rate of 16 Gbit/s between single transmitter and receiver packages, as well as the expandability of this technology by combing four links in parallel to achieve a 64 Gbit/s link. (2) Accelerated development: By collaborating during precompetitive technology development stage, OTEC will advance the development of optical components and produce links for a multiboard processor testbed demonstration; and (3) Producibility: OETC's technology will achieve this performance by using components that are affordable, and reliable, with a line BER less than 10(exp -15) and MTTF greater than 10(exp 6) hours.

  1. An automated lung nodule detection system for CT images using synthetic minority oversampling

    NASA Astrophysics Data System (ADS)

    Mehre, Shrikant A.; Mukhopadhyay, Sudipta; Dutta, Anirvan; Harsha, Nagam Chaithan; Dhara, Ashis Kumar; Khandelwal, Niranjan

    2016-03-01

    Pulmonary nodules are a potential manifestation of lung cancer, and their early detection can remarkably enhance the survival rate of patients. This paper presents an automated pulmonary nodule detection algorithm for lung CT images. The algorithm utilizes a two-stage approach comprising nodule candidate detection followed by reduction of false positives. The nodule candidate detection involves thresholding, followed by morphological opening. The geometrical features at this stage are selected from properties of nodule size and compactness, and lead to reduced number of false positives. An SVM classifier is used with a radial basis function kernel. The data imbalance, due to uneven distribution of nodules and non-nodules as a result of the candidate detection stage, is proposed to be addressed by oversampling of minority class using Synthetic Minority Over-sampling Technique (SMOTE), and over-imposition of its misclassification penalty. Experiments were performed on 97 CT scans of a publically-available (LIDC-IDRI) database. Performance is evaluated in terms of sensitivity and false positives per scan (FP/scan). Results indicate noteworthy performance of the proposed approach (nodule detection sensitivity after 4-fold cross-validation is 92.91% with 3 FP/scan). Comparative analysis also reflects a comparable and often better performance of the proposed setup over some of the existing techniques.

  2. Optoelectronic Reservoir Computing

    PubMed Central

    Paquot, Y.; Duport, F.; Smerieri, A.; Dambre, J.; Schrauwen, B.; Haelterman, M.; Massar, S.

    2012-01-01

    Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an optoelectronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations. PMID:22371825

  3. Materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John; Smigelski, Jr., Paul Michael

    2015-01-27

    Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

  4. Optoelectronic devices by GSMBE

    NASA Astrophysics Data System (ADS)

    Goldstein, L.

    1990-10-01

    The growth of high quality InP and GaInAsP alloy by gas source molecular beam epitaxy (GSMBE) is of high interest for the realization of optoelectronic devices in the wavelength region of 1.3-1.55 μm. This epitaxial technique is also well adapted to the growth of quantum well structure with very sharp interfaces. Optical devices of high performances, i.e. semiconductor amplifier and distributed feedback multi-quantum well (DFB-MQW) lasers, are fabricated with a hybrid process with GSMBE for the active structure and liquid phase epitaxy (LPE) for the regrowth of lateral confinement layers. These devices show excellent electrical and optical characteristics.

  5. Optoelectronic fringe projection operations

    NASA Astrophysics Data System (ADS)

    Garavaglia, Mario; Rabal, Hector J.; Aguirre, E.

    1990-07-01

    We present a simple optoelectronical fringe projection method for topographic or deformation study of objects. Programmed positioning and repositioning can also be performed. 1. DESCRIPTION An incoherent method for fringe projection operations was recently reported'' using photographic procedures. It is extended now to real time operation using an LCD video projector and a CCD camera. Fringes consisting in Rbnchitype rulings are generated in a personal computer and projected onto an object by using a Kodak LCD colour video projector. Its image is then read by a SVHS-CCD Panasonic camera and electronically memorized. This fringe pattern contains information concerning the position and topography of the object stored as fringe phase modulation. A standard state of the object can be frozen in the screen of a monitor and its evolution deformation or misspositioning followed through the Moire between current and stored fringes. Topography of the object expressed as a mathemati cal functi on h ( x y) and its time evolution can alsO be determined from the memorized data. . Besides a conjugated grid can be generated so that when the latter is projected onto the object the observed fringes are corrected to straight lines resembling the original Ronchi rul ings i. e. distortion produced by object topography is cancelled out. Deformations with respect to this state are straightforwardly interpreted by an observer both in magnitude and sign. The system can be made

  6. A new cluster-based oversampling method for improving survival prediction of hepatocellular carcinoma patients.

    PubMed

    Santos, Miriam Seoane; Abreu, Pedro Henriques; García-Laencina, Pedro J; Simão, Adélia; Carvalho, Armando

    2015-12-01

    Liver cancer is the sixth most frequently diagnosed cancer and, particularly, Hepatocellular Carcinoma (HCC) represents more than 90% of primary liver cancers. Clinicians assess each patient's treatment on the basis of evidence-based medicine, which may not always apply to a specific patient, given the biological variability among individuals. Over the years, and for the particular case of Hepatocellular Carcinoma, some research studies have been developing strategies for assisting clinicians in decision making, using computational methods (e.g. machine learning techniques) to extract knowledge from the clinical data. However, these studies have some limitations that have not yet been addressed: some do not focus entirely on Hepatocellular Carcinoma patients, others have strict application boundaries, and none considers the heterogeneity between patients nor the presence of missing data, a common drawback in healthcare contexts. In this work, a real complex Hepatocellular Carcinoma database composed of heterogeneous clinical features is studied. We propose a new cluster-based oversampling approach robust to small and imbalanced datasets, which accounts for the heterogeneity of patients with Hepatocellular Carcinoma. The preprocessing procedures of this work are based on data imputation considering appropriate distance metrics for both heterogeneous and missing data (HEOM) and clustering studies to assess the underlying patient groups in the studied dataset (K-means). The final approach is applied in order to diminish the impact of underlying patient profiles with reduced sizes on survival prediction. It is based on K-means clustering and the SMOTE algorithm to build a representative dataset and use it as training example for different machine learning procedures (logistic regression and neural networks). The results are evaluated in terms of survival prediction and compared across baseline approaches that do not consider clustering and/or oversampling using the

  7. The Synthetic-Oversampling Method: Using Photometric Colors to Discover Extremely Metal-poor Stars

    NASA Astrophysics Data System (ADS)

    Miller, A. A.

    2015-09-01

    Extremely metal-poor (EMP) stars ([Fe/H] ≤ -3.0 dex) provide a unique window into understanding the first generation of stars and early chemical enrichment of the universe. EMP stars are exceptionally rare, however, and the relatively small number of confirmed discoveries limits our ability to exploit these near-field probes of the first ˜500 Myr after the Big Bang. Here, a new method to photometrically estimate [Fe/H] from only broadband photometric colors is presented. I show that the method, which utilizes machine-learning algorithms and a training set of ˜170,000 stars with spectroscopically measured [Fe/H], produces a typical scatter of ˜0.29 dex. This performance is similar to what is achievable via low-resolution spectroscopy, and outperforms other photometric techniques, while also being more general. I further show that a slight alteration to the model, wherein synthetic EMP stars are added to the training set, yields the robust identification of EMP candidates. In particular, this synthetic-oversampling method recovers ˜20% of the EMP stars in the training set, at a precision of ˜0.05. Furthermore, ˜65% of the false positives from the model are very metal-poor stars ([Fe/H] ≤ -2.0 dex). The synthetic-oversampling method is biased toward the discovery of warm (˜F-type) stars, a consequence of the targeting bias from the Sloan Digital Sky Survey/Sloan Extension for Galactic Understanding survey. This EMP selection method represents a significant improvement over alternative broadband optical selection techniques. The models are applied to >12 million stars, with an expected yield of ˜600 new EMP stars, which promises to open new avenues for exploring the early universe.

  8. THE SYNTHETIC-OVERSAMPLING METHOD: USING PHOTOMETRIC COLORS TO DISCOVER EXTREMELY METAL-POOR STARS

    SciTech Connect

    Miller, A. A.

    2015-09-20

    Extremely metal-poor (EMP) stars ([Fe/H] ≤ −3.0 dex) provide a unique window into understanding the first generation of stars and early chemical enrichment of the universe. EMP stars are exceptionally rare, however, and the relatively small number of confirmed discoveries limits our ability to exploit these near-field probes of the first ∼500 Myr after the Big Bang. Here, a new method to photometrically estimate [Fe/H] from only broadband photometric colors is presented. I show that the method, which utilizes machine-learning algorithms and a training set of ∼170,000 stars with spectroscopically measured [Fe/H], produces a typical scatter of ∼0.29 dex. This performance is similar to what is achievable via low-resolution spectroscopy, and outperforms other photometric techniques, while also being more general. I further show that a slight alteration to the model, wherein synthetic EMP stars are added to the training set, yields the robust identification of EMP candidates. In particular, this synthetic-oversampling method recovers ∼20% of the EMP stars in the training set, at a precision of ∼0.05. Furthermore, ∼65% of the false positives from the model are very metal-poor stars ([Fe/H] ≤ −2.0 dex). The synthetic-oversampling method is biased toward the discovery of warm (∼F-type) stars, a consequence of the targeting bias from the Sloan Digital Sky Survey/Sloan Extension for Galactic Understanding survey. This EMP selection method represents a significant improvement over alternative broadband optical selection techniques. The models are applied to >12 million stars, with an expected yield of ∼600 new EMP stars, which promises to open new avenues for exploring the early universe.

  9. An analog-digital hybrid RX beamformer chip with non-uniform sampling for ultrasound medical imaging with 2D CMUT array.

    PubMed

    Um, Ji-Yong; Kim, Yoon-Jee; Cho, Seong-Eun; Chae, Min-Kyun; Song, Jongkeun; Kim, Baehyung; Lee, Seunghun; Bang, Jihoon; Kim, Youngil; Cho, Kyungil; Kim, Byungsub; Sim, Jae-Yoon; Park, Hong-June

    2014-12-01

    To reduce the memory area, a two-stage RX beamformer (BF) chip with 64 channels is proposed for the ultrasound medical imaging with a 2D CMUT array. The chip retrieved successfully two B-mode phantom images with a steering angle from -45 (°) to +45 (°), the maximum delay range of 8 μs, and the delay resolution of 6.25 ns. An analog-digital hybrid BF (HBF) is chosen for the proposed chip to utilize the easy beamforming operation in the digital domain and also to reduce chip area by minimizing the number of ADCs. The chip consists of eight analog beamformers (ABF) for the 1st-stage and a digital beamformer (DBF) for the 2nd-stage. The two-stage architecture reduces the memory area of both ABF and DBF by around four times. The DBF circuit is divided into three steps to further reduce the digital FIFO memory area by around twice. Coupled with the non-uniform sampling scheme, the proposed two-stage HBF chip reduces the total memory area by around 40 times compared to the uniform-sampling single-stage BF chip. The chip fabricated in a 0.13- μm CMOS process occupies the area of 19.4 mm(2), and dissipates 1.14 W with the analog supply of 3.3 V and the digital supply of 1.2 V.

  10. Compact Optoelectronic Compass

    NASA Technical Reports Server (NTRS)

    Christian, Carl

    2004-01-01

    A compact optoelectronic sensor unit measures the apparent motion of the Sun across the sky. The data acquired by this chip are processed in an external processor to estimate the relative orientation of the axis of rotation of the Earth. Hence, the combination of this chip and the external processor finds the direction of true North relative to the chip: in other words, the combination acts as a solar compass. If the compass is further combined with a clock, then the combination can be used to establish a threeaxis inertial coordinate system. If, in addition, an auxiliary sensor measures the local vertical direction, then the resulting system can determine the geographic position. This chip and the software used in the processor are based mostly on the same design and operation as those of the unit described in Micro Sun Sensor for Spacecraft (NPO-30867) elsewhere in this issue of NASA Tech Briefs. Like the unit described in that article, this unit includes a small multiple-pinhole camera comprising a micromachined mask containing a rectangular array of microscopic pinholes mounted a short distance in front of an image detector of the active-pixel sensor (APS) type (see figure). Further as in the other unit, the digitized output of the APS in this chip is processed to compute the centroids of the pinhole Sun images on the APS. Then the direction to the Sun, relative to the compass chip, is computed from the positions of the centroids (just like a sundial). In the operation of this chip, one is interested not only in the instantaneous direction to the Sun but also in the apparent path traced out by the direction to the Sun as a result of rotation of the Earth during an observation interval (during which the Sun sensor must remain stationary with respect to the Earth). The apparent path of the Sun across the sky is projected on a sphere. The axis of rotation of the Earth lies at the center of the projected circle on the sphere surface. Hence, true North (not magnetic

  11. Nanocrystal-based Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Evans, Kenneth; Herzog, Joseph; Ward, Daniel; Natelson, Douglas

    2012-02-01

    Optoelectronic devices capable of detecting and emitting light on a scale well below its wavelength could have a profound impact on basic and applied experimental research in light-based electronics, on-demand photon generation, and for studying poorly understood quantum phenomena such as blinking and spectral wandering. We present a fabrication procedure for ultrasmall, nanocrystal optoelectronic devices based on self-assembled layers of quantum dots in plasmonically-active gold nanogaps. We provide preliminary experimental results which examine the possibility for surfaced-enhanced fluorescence, subwavelength detection and emission of light as well as plasmon-based optical trapping in these systems.

  12. Coupled opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Yao, X. Steve (Inventor); Maleki, Lute (Inventor)

    1999-01-01

    A coupled opto-electronic oscillator that directly couples a laser oscillation with an electronic oscillation to simultaneously achieve a stable RF oscillation at a high frequency and ultra-short optical pulsation by mode locking with a high repetition rate and stability. Single-mode selection can be achieved even with a very long opto-electronic loop. A multimode laser can be used to pump the electronic oscillation, resulting in a high operation efficiency. The optical and the RF oscillations are correlated to each other.

  13. Anthropogenic Emissions of Highly Reactive Volatile Organic Compounds (HRVOCs) Inferred from Oversampling of OMI HCHO Columns

    NASA Technical Reports Server (NTRS)

    Zhu, Lei; Jacob, Daniel; Mickley, Loretta; Marais, Eloise; Zhang, Aoxing; Cohan, Daniel; Yoshida, Yasuko; Duncan, Bryan; Abad, Gonzalo Gonzalez; Chance, Kelly; DeSmedt, Isabelle

    2014-01-01

    Satellite observations of formaldehyde (HCHO) columns provide top-down constraints on emissions of highly reactive volatile organic compounds (HRVOCs). This approach has been used previously to constrain emissions of isoprene from vegetation, but application to US anthropogenic emissions has been stymied by lack of a discernable HCHO signal. Here we show that oversampling of HCHO data from the Ozone Monitoring Instrument (OMI) for 2005 - 2008 enables quantitative detection of urban and industrial plumes in eastern Texas including Houston, Port Arthur, and Dallas-Fort Worth. By spatially integrating the individual urban-industrial HCHO plumes observed by OMI we can constrain the corresponding HCHO-weighted HRVOC emissions. Application to the Houston plume indicates a HCHO source of 260 plus or minus 110 kmol h-1 and implies a factor of 5.5 plus or minus 2.4 underestimate of anthropogenic HRVOC emissions in the US Environmental Protection Agency inventory. With this approach we are able to monitor the trend in HRVOC emissions over the US, in particular from the oil-gas industry, over the past decade.

  14. Oversampling advances in millimeter-wave scan imaging using inexpensive neon indicator lamp detectors

    NASA Astrophysics Data System (ADS)

    Levanon, Assaf; Kopeika, Natan S.; Yitzhaky, Yitzhak; Abramovich, Amir; Rozban, Daniel; Joseph, Hezi; Aharon, Avihai; Belenky, Alex; Gefen, Michael; Yadid-Pecht, Orly

    2013-06-01

    In recent years, much effort has been invested to develop room temperature inexpensive, but sensitive, millimeter wave (MMW) and terahertz (THz) detectors that can be used as pixels in focal plane arrays, which is important for real-time imaging. A new 18×2 neon indicator lamp MMW/THz scanner was developed. The components of the camera include horizontally shifted two-column glow discharge detectors in a scanning array. The detectors, costing about 50 cents each, are wired to a preprocessing card, a VLSI board, and a motor for scanner movement. A description of the VLSI Verilog programmable hardware of the new scanner, the physical architecture, the software user interface, and imaging results at 97 GHz are presented. At this stage, the emphasis is focused on the lamp exposure time and spatial resolution when the scanning is performed horizontally. In the future it is planned to expose all pixels simultaneously for real-time imaging. New software capabilities allow the application of digital image enhancement algorithms. Fast scanning permits obtaining images in 1 to 5 s. Oversampling yields a sharper edge response and a higher signal-to-noise ratio.

  15. Oversampling in virtual visual sensors as a means to recover higher modes of vibration

    NASA Astrophysics Data System (ADS)

    Shariati, Ali; Schumacher, Thomas

    2015-03-01

    Vibration-based structural health monitoring (SHM) techniques require modal information from the monitored structure in order to estimate the location and severity of damage. Natural frequencies also provide useful information to calibrate finite element models. There are several types of physical sensors that can measure the response over a range of frequencies. For most of those sensors however, accessibility, limitation of measurement points, wiring, and high system cost represent major challenges. Recent optical sensing approaches offer advantages such as easy access to visible areas, distributed sensing capabilities, and comparatively inexpensive data recording while having no wiring issues. In this research we propose a novel methodology to measure natural frequencies of structures using digital video cameras based on virtual visual sensors (VVS). In our initial study where we worked with commercially available inexpensive digital video cameras we found that for multiple degrees of freedom systems it is difficult to detect all of the natural frequencies simultaneously due to low quantization resolution. In this study we show how oversampling enabled by the use of high-end high-frame-rate video cameras enable recovering all of the three natural frequencies from a three story lab-scale structure.

  16. Compact FPGA-based beamformer using oversampled 1-bit A/D converters.

    PubMed

    Tomov, Borislav Gueorguiev; Jensen, Jørgen Arendt

    2005-05-01

    A compact medical ultrasound beamformer architecture that uses oversampled 1-bit analog-to-digital (A/D) converters is presented. Sparse sample processing is used, as the echo signal for the image lines is reconstructed in 512 equidistant focal points along the line through its in-phase and quadrature components. That information is sufficient for presenting a B-mode image and creating a color flow map. The high sampling rate provides the necessary delay resolution for the focusing. The low channel data width (1-bit) makes it possible to construct a compact beamformer logic. The signal reconstruction is done using finite impulse reponse (FIR) filters, applied on selected bit sequences of the delta-sigma modulator output stream. The approach allows for a multichannel beamformer to fit in a single field programmable gate array (FPGA) device. A 32-channel beamformer is estimated to occupy 50% of the available logic resources in a commercially available mid-range FPGA, and to be able to operate at 129 MHz. Simulation of the architecture at 140 MHz provides images with a dynamic range approaching 60 dB for an excitation frequency of 3 MHz.

  17. Improving the accuracy of MTF measurement at low frequencies based on oversampled edge spread function deconvolution.

    PubMed

    Zhou, Zhongxing; Gao, Feng; Zhao, Huijuan; Zhang, Lixin; Ren, Liqiang; Li, Zheng; Ghani, Muhammad U; Hao, Ting; Liu, Hong

    2015-01-01

    The modulation transfer function (MTF) of a radiographic system is often evaluated by measuring the system's edge spread function (ESF) using edge device. However, the numerical differentiation procedure of the traditional slanted edge method amplifies noises in the line spread function (LSF) and limits the accuracy of the MTF measurement at low frequencies. The purpose of this study is to improve the accuracy of low-frequency MTF measurement for digital x-ray imaging systems. An edge spread function (ESF) deconvolution technique was developed for MTF measurement based on the degradation model of slanted edge images. Specifically, symmetric oversampled ESFs were constructed by subtracting a shifted version of the ESF from the original one. For validation, the proposed MTF technique was compared with conventional slanted edge method through computer simulations as well as experiments on two digital radiography systems. The simulation results show that the average errors of the proposed ESF deconvolution technique were 0.11% ± 0.09% and 0.23% ± 0.14%, and they outperformed the conventional edge method (0.64% ± 0.57% and 1.04% ± 0.82% respectively) at low-frequencies. On the experimental edge images, the proposed technique achieved better uncertainty performance than the conventional method. As a result, both computer simulation and experiments have demonstrated that the accuracy of MTF measurement at low frequencies can be improved by using the proposed ESF deconvolution technique. PMID:26410662

  18. A PWM Buck Converter With Load-Adaptive Power Transistor Scaling Scheme Using Analog-Digital Hybrid Control for High Energy Efficiency in Implantable Biomedical Systems.

    PubMed

    Park, Sung-Yun; Cho, Jihyun; Lee, Kyuseok; Yoon, Euisik

    2015-12-01

    We report a pulse width modulation (PWM) buck converter that is able to achieve a power conversion efficiency (PCE) of > 80% in light loads 100 μA) for implantable biomedical systems. In order to achieve a high PCE for the given light loads, the buck converter adaptively reconfigures the size of power PMOS and NMOS transistors and their gate drivers in accordance with load currents, while operating at a fixed frequency of 1 MHz. The buck converter employs the analog-digital hybrid control scheme for coarse/fine adjustment of power transistors. The coarse digital control generates an approximate duty cycle necessary for driving a given load and selects an appropriate width of power transistors to minimize redundant power dissipation. The fine analog control provides the final tuning of the duty cycle to compensate for the error from the coarse digital control. The mode switching between the analog and digital controls is accomplished by a mode arbiter which estimates the average of duty cycles for the given load condition from limit cycle oscillations (LCO) induced by coarse adjustment. The fabricated buck converter achieved a peak efficiency of 86.3% at 1.4 mA and > 80% efficiency for a wide range of load conditions from 45 μA to 4.1 mA, while generating 1 V output from 2.5-3.3 V supply. The converter occupies 0.375 mm(2) in 0.18 μm CMOS processes and requires two external components: 1.2 μF capacitor and 6.8 μH inductor.

  19. A PWM Buck Converter With Load-Adaptive Power Transistor Scaling Scheme Using Analog-Digital Hybrid Control for High Energy Efficiency in Implantable Biomedical Systems.

    PubMed

    Park, Sung-Yun; Cho, Jihyun; Lee, Kyuseok; Yoon, Euisik

    2015-12-01

    We report a pulse width modulation (PWM) buck converter that is able to achieve a power conversion efficiency (PCE) of > 80% in light loads 100 μA) for implantable biomedical systems. In order to achieve a high PCE for the given light loads, the buck converter adaptively reconfigures the size of power PMOS and NMOS transistors and their gate drivers in accordance with load currents, while operating at a fixed frequency of 1 MHz. The buck converter employs the analog-digital hybrid control scheme for coarse/fine adjustment of power transistors. The coarse digital control generates an approximate duty cycle necessary for driving a given load and selects an appropriate width of power transistors to minimize redundant power dissipation. The fine analog control provides the final tuning of the duty cycle to compensate for the error from the coarse digital control. The mode switching between the analog and digital controls is accomplished by a mode arbiter which estimates the average of duty cycles for the given load condition from limit cycle oscillations (LCO) induced by coarse adjustment. The fabricated buck converter achieved a peak efficiency of 86.3% at 1.4 mA and > 80% efficiency for a wide range of load conditions from 45 μA to 4.1 mA, while generating 1 V output from 2.5-3.3 V supply. The converter occupies 0.375 mm(2) in 0.18 μm CMOS processes and requires two external components: 1.2 μF capacitor and 6.8 μH inductor. PMID:26742139

  20. Simple Optoelectronic Feedback in Microwave Oscillators

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Iltchenko, Vladimir

    2009-01-01

    A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.

  1. III-Nitride nanowire optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian

    2015-11-01

    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  2. Optoelectronic device for hematocrit measurements

    NASA Astrophysics Data System (ADS)

    Pluta, M.; Milewska, D.; Mazikowski, A.

    2015-09-01

    An optoelectronic system for measurements of hematocrit level (HCT) in the whole human blood is presented. Proposed system integrates a dedicated optoelectronic sensor, a microcontroller and a small LCD display in a low cost, battery-powered, handheld device. Chosen method for determining blood hematocrit level is based on optical properties of whole blood in visible and NIR wavelength range. Measurements with the use of proposed system require blood samples (small drop in the range of microliters) which is placed in the micro cuvette. Then, absorption of the sample is measured at wavelengths of 570 nm and 880 nm. Prototype of the device was build and tested. Test results confirmed proper operation of the device with correct metrological parameters in application to HCT level measurements. Such a portable device can be used as a tool of bedside diagnosis, which becomes interesting alternative to full laboratory tests.

  3. Optoelectronic Apparatus Measures Glucose Noninvasively

    NASA Technical Reports Server (NTRS)

    Ansari, Rafat R.; Rovati, Luigi L.

    2003-01-01

    An optoelectronic apparatus has been invented as a noninvasive means of measuring the concentration of glucose in the human body. The apparatus performs polarimetric and interferometric measurements of the human eye to acquire data from which the concentration of glucose in the aqueous humor can be computed. Because of the importance of the concentration of glucose in human health, there could be a large potential market for instruments based on this apparatus.

  4. Opto-electronic morphological processor

    NASA Technical Reports Server (NTRS)

    Yu, Jeffrey W. (Inventor); Chao, Tien-Hsin (Inventor); Cheng, Li J. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    The opto-electronic morphological processor of the present invention is capable of receiving optical inputs and emitting optical outputs. The use of optics allows implementation of parallel input/output, thereby overcoming a major bottleneck in prior art image processing systems. The processor consists of three components, namely, detectors, morphological operators and modulators. The detectors and operators are fabricated on a silicon VLSI chip and implement the optical input and morphological operations. A layer of ferro-electric liquid crystals is integrated with a silicon chip to provide the optical modulation. The implementation of the image processing operators in electronics leads to a wide range of applications and the use of optical connections allows cascadability of these parallel opto-electronic image processing components and high speed operation. Such an opto-electronic morphological processor may be used as the pre-processing stage in an image recognition system. In one example disclosed herein, the optical input/optical output morphological processor of the invention is interfaced with a binary phase-only correlator to produce an image recognition system.

  5. Optoelectronic Oscillators for Communication Systems

    NASA Astrophysics Data System (ADS)

    Romeira, Bruno; Figueiredo, José

    We introduce and report recent developments on a novel five port optoelectronic voltage controlled oscillator consisting of a resonant tunneling diode (RTD) optical-waveguide integrated with a laser diode. The RTD-based optoelectronic oscillator (OEO) has both optical and electrical input and output ports, with the fifth port allowing voltage control. The RTD-OEO locks to reference radio-frequency (RF) sources by either optical or electrical injection locking techniques allowing remote synchronization, eliminating the need of impedance matching between traditional RF oscillators. RTD-OEO functions include generation, amplification and distribution of RF carriers, clock recovery, carrier recovery, modulation and demodulation and frequency synthesis. Self-injection locking operation modes, where small portions of the output electrical/optical signals are fed back into the electrical/optical input ports, are also proposed. The self-phase locked loop configuration can give rise to low-noise high-stable oscillations, not limited by the RF source performance and with no need of external optoelectronic conversion.

  6. Nanofabrication of Hybrid Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Dibos, Alan Michael

    The material requirements for optoelectronic devices can vary dramatically depending on the application. Often disparate material systems need to be combined to allow for full device functionality. At the nanometer scale, this can often be challenging because of the inherent chemical and structural incompatibilities of nanofabrication. This dissertation concerns the integration of seemingly dissimilar materials into hybrid optoelectronic devices for photovoltaic, plasmonic, and photonic applications. First, we show that combining a single strip of conjugated polymer and inorganic nanowire can yield a nanoscale solar cell, and modeling of optical absorption and exciton diffusion in this device can provide insight into the efficiency of charge separation. Second, we use an on-chip nanowire light emitting diode to pump a colloidal quantum dot coupled to a silver waveguide. The resulting device is an electro-optic single plasmon source. Finally, we transfer diamond waveguides onto near-field avalanche photodiodes fabricated from GaAs. Embedded in the diamond waveguides are nitrogen vacancy color centers, and the mapping of emission from these single-photon sources is demonstrated using our on-chip detectors, eliminating the need for external photodetectors on an optical table. These studies show the promise of hybrid optoelectronic devices at the nanoscale with applications in alternative energy, optical communication, and quantum optics.

  7. Optoelectronic tweezers for medical diagnostics

    NASA Astrophysics Data System (ADS)

    Kremer, Clemens; Neale, Steven; Menachery, Anoop; Barrett, Mike; Cooper, Jonathan M.

    2012-01-01

    Optoelectronic tweezers (OET) allows the spatial patterning of electric fields through selected illumination of a photoconductive surface. This enables the manipulation of micro particles and cells by creating non-uniform electrical fields that then produce dielectrophoretic (DEP) forces. The DEP responses of cells differ and can produce negative or positive (repelled or attracted to areas of high electric field) forces. Therefore OET can be used to manipulate individual cells and separate different cell types from each other. Thus OET has many applications for medical diagnostics, demonstrated here with work towards diagnosing Human African Trypanosomiasis, also known as sleeping sickness.

  8. Cell rotation using optoelectronic tweezers.

    PubMed

    Liang, Yuan-Li; Huang, Yuan-Peng; Lu, Yen-Sheng; Hou, Max T; Yeh, J Andrew

    2010-01-01

    A cell rotation method by using optoelectronic tweezers (OET) is reported. The binary image of a typical OET device, whose light and dark sides act as two sets of parallel plates with different ac voltages, was used to create a rotating electric field. Its feasibility for application to electrorotation of cells was demonstrated by rotating Ramos and yeast cells in their pitch axes. The electrorotation by using OET devices is dependent on the medium and cells' electrical properties, the cells' positions, and the OET device's geometrical dimension, as well as the frequency of the electric field. PMID:21267435

  9. Integrated Optoelectronics for Parallel Microbioanalysis

    NASA Technical Reports Server (NTRS)

    Stirbl, Robert; Moynihan, Philip; Bearman, Gregory; Lane, Arthur

    2003-01-01

    Miniature, relatively inexpensive microbioanalytical systems ("laboratory-on-achip" devices) have been proposed for the detection of hazardous microbes and toxic chemicals. Each system of this type would include optoelectronic sensors and sensor-output-processing circuitry that would simultaneously look for the optical change, fluorescence, delayed fluorescence, or phosphorescence signatures from multiple redundant sites that have interacted with the test biomolecules in order to detect which one(s) was present in a given situation. These systems could be used in a variety of settings that could include doctors offices, hospitals, hazardous-material laboratories, biological-research laboratories, military operations, and chemical-processing plants.

  10. Oversampling OMI SO2 to characterize large point sources, pollution transport and SO2 lifetimes in the atmosphere

    NASA Astrophysics Data System (ADS)

    Wilkins, J. L.; de Foy, B.

    2012-12-01

    Power plant emissions play a key role in anthropogenic sulfur dioxide (SO2) generated pollution. The emissions of regulated point sources in many cases is well understood and can be monitored in real time. Although, remaining problems include emissions estimations of poorly characterized sources, SO2 mean lifetime and transport of the emissions. With the development of satellite remote sensing, a top-down estimate approach to SO2 emissions can be made world-wide using oversampled SO2 measurements from NASA's Aura Ozone Monitoring Instrument (OMI). Initially this study will focus on large point sources in the United States. OMI retrievals are oversampled to fine rectangular or polar grids with grid spacing between 1 to 5 km. Constrained nonlinear optimization is used to determine the parameters of the scalar decay function of SO2 from a point source. Applying this technique on OMI SO2 measurements over a period of several years coupled with observational and/or modeled wind data improves the estimations of pollution transport, dispersion, decay, and the mean lifetime of SO2 emissions.

  11. Optoelectronic monitoring of neural activity

    NASA Astrophysics Data System (ADS)

    Liu, Xiuli; Quan, Tingwei; Zhou, Wei

    2008-12-01

    Neural activity is a process of induction and propagation of neural excitability. Clarifying the mechanism of neural activity is one of the basic goals of modern brain science. The calcium ion, a second messenger in the brain, plays key roles in neuronal signaling pathways. To detect electrophysiology signals basing on membrane potential change of neurons and fluorescence signals basing on calcium dynamics and fluorescence labeling technique is critical for understanding neuronal signaling. In this research, a random access two-photon fluorescence microscope system basing on acousto-optic deflectors was used to monitor calcium fluorescence signals of neurons, combining a HEKA patch clamp to detect neuronal electrophysiology synchronously. Results showed that the optoelectronic method to monitor the firing of action potential at 50 Hz has single action potential resolution.

  12. Optoelectronic neural networks and learning machines

    SciTech Connect

    Farhat, N.H

    1989-09-01

    Optics offers advantages in realizing the parallelism, massive interconnectivity, and plasticity required in the design and construction of large-scale optoelectronic (photonic) neurocomputers that solve optimization problems at potentially very high speeds by learning to perform mappings and associations. To elucidate these advantages, a brief neural net primer based on phase-space and energy landscape considerations is presented. This provides the basis for subsequent discussion of optoelectronic architectures and implementations with self-organization and learning ability that are configured around an optical crossbar interconnect. Stochastic learning in the context of a Boltzmann machine is then described to illustrate the flexibility of optoelectronics in performing tasks that may be difficult for electronics alone. Stochastic nets are studies to gain insight into the possible role of noise in biological neural nets. The authors describe two approaches to realizing large-scale optoelectronic neurocomputers.

  13. Opto-Electronic Oscillator and its Applications

    NASA Technical Reports Server (NTRS)

    Yao, X. S.; Maleki, L.

    1996-01-01

    We present the theoretical and experimental results of a new class of microwave oscillators called opto-electronic oscillators (OEO). We discuss techniques of achieving high stability single mode operation and demonstrate the applications of OEO in photonic communication systems.

  14. Metal oxides for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  15. Metal oxides for optoelectronic applications.

    PubMed

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories. PMID:27005918

  16. Metal oxides for optoelectronic applications.

    PubMed

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  17. Transparent heat-spreader for optoelectronic applications

    DOEpatents

    Minano, Juan Carlos; Benitez, Pablo

    2014-11-04

    An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

  18. Radiation effects in optoelectronic devices. [Review

    SciTech Connect

    Barnes, C.E.; Wiczer, J.J.

    1984-05-01

    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given.

  19. Optoelectronic microdevices for combined phototherapy

    NASA Astrophysics Data System (ADS)

    Zharov, Vladimir P.; Menyaev, Yulian A.; Hamaev, V. A.; Antropov, G. M.; Waner, Milton

    2000-03-01

    In photomedicine in some of cases radiation delivery to local zones through optical fibers can be changed for the direct placing of tiny optical sources like semiconductor microlasers or light diodes in required zones of ears, nostrils, larynx, nasopharynx cochlea or alimentary tract. Our study accentuates the creation of optoelectronic microdevices for local phototherapy and functional imaging by using reflected light. Phototherapeutic micromodule consist of the light source, microprocessor and miniature optics with different kind of power supply: from autonomous with built-in batteries to remote supply by using pulsed magnetic field and supersmall coils. The developed prototype photomodule has size (phi) 8X16 mm and work duration with built-in battery and light diode up several hours at the average power from several tenths of mW to few mW. Preliminary clinical tests developed physiotherapeutic micrimodules in stomatology for treating the inflammation and in otolaryngology for treating tonsillitis and otitis are presented. The developed implanted electro- optical sources with typical size (phi) 4X0,8 mm and with remote supply were used for optical stimulation of photosensitive retina structure and electrostimulation of visual nerve. In this scheme the superminiature coil with 30 electrical integrated levels was used. Such devices were implanted in eyes of 175 patients with different vision problems during clinical trials in Institute of Eye's Surgery in Moscow. For functional imaging of skin layered structure LED arrays coupled photodiodes arrays were developed. The possibilities of this device for study drug diffusion and visualization small veins are discussed.

  20. Polymer light harvesting composites for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Sun, Sam-Shajing; Wang, Dan

    2015-09-01

    Polymer based optoelectronic composites and thin film devices exhibit great potential in space applications due to their lightweight, flexible shape, high photon absorption coefficients, and robust radiation tolerance in space environment. Polymer/dye composites appear promising for optoelectronics applications due to potential enhancements in both light harvesting and charge separation. In this study, the optoelectronic properties of a series of molecular dyes paired with a conjugated polymer Poly(3-hexylthiophene-2,5-diyl) (P3HT) were investigated. Specifically, the solution PL quenching coefficients (Ksv) of dye/polymer follows a descending order from dyes of Chloro(protoporphyrinato)iron(III) (Hemin), Protoporphyrin, to meso-Tetra(4-carboxyphenyl)porphine (TCPP). In optoelectronic devices made of the P3HT/dye/PCBM composites, the short circuit current densities Jsc as well as the overall power conversion efficiencies (PCE) also follow a descending order from Hemin, Protoporphyrin, to TCPP, despite Hemin exhibits the intermediate polymer/dye LUMO (lowest unoccupied molecular orbital) offset and lowest absorption coefficient as compared to the other two dyes, i.e., the cell optoelectronic efficiency did not follow the LUMO offsets which are the key driving forces for the photo induced charge separations. This study reveals that too large LUMO offset or electron transfer driving force may result in smaller PL quenching and optoelectronic conversion efficiency, this could be another experimental evidence for the Marcus electron transfer model, particularly for the Marcus `inverted region'. It appears an optimum electron transfer driving force or strong PL quenching appears more critical than absorption coefficient for optoelectronic conversion devices.

  1. Optoelectronics research in the former Soviet Union

    NASA Astrophysics Data System (ADS)

    Casey, H. C., Jr.; Bishop, S. G.; Eichen, E.; Kazarinov, R. F.; Taylor, H. F.

    1992-05-01

    Optoelectronics research in the former Soviet Union has been examined in the areas of eptitaxial layer growth and device processing, photonic devices such as semiconductor laser and photodetectors, high-speed lasers, the integration of photonic devices and transistors for optoelectronic integrated circuits (OEIC's), optical amplifiers, optoelectronic switching, and optical communications. These devices are largely prepared with 3-5 compound semiconductors. The assessment by a panel of US experts is based on a review of the translated Soviet technical literature, supplemented by information from recent visits to the former Soviet Union. The majority of Soviet optoelectronic devices were fabricated on wafers prepared by liquid-phase epitaxy. The strongest area of Soviet optoelectronic device research has been semiconductor lasers. No reports of ER(3+)-doped fiber amplifiers were found in the Soviet literature. However, Er(3+)-doped fiber fabrication is extremely simple, and, given its traditional strengths in the area of glass fabrication, the former Soviet Union should have the capability to fabricate Er(3+)-doped optical-fiber amplifiers. The current turmoil in the former Soviet Union makes predictions of the future difficult. It is likely that researchers will be driven to develop funding ties with foreign entities, and they also will become better integrated into the world research community by publishing in foreign (mainly US) journals.

  2. Cellular Level Mass Spectrometry Imaging using Infrared Matrix Assisted Laser Desorption Electrospray Ionization (IR-MALDESI) by Oversampling

    PubMed Central

    Nazari, Milad; Muddiman, David C.

    2014-01-01

    Mass spectrometry imaging (MSI) allows for the direct and simultaneous analysis of the spatial distribution of molecular species from sample surfaces such as tissue sections. One of the goals of MSI is monitoring the distribution of compounds at the cellular resolution in order to gain insights about the biology that occurs at this spatial level. Infrared matrix-assisted laser desorption electrospray ionization (IR-MALDESI) imaging of cervical tissue sections was performed using a spot-to-spot distance of 10 μm by utilizing the method of oversampling; where the target plate is moved by a distance that is less than the desorption radius of the laser. In addition to high spatial resolution, high mass accuracy (± 1 ppm) and high mass resolving power (140,000 at m/z=200) was achieved by coupling the IR-MALDESI imaging source to a hybrid quadrupole Orbitrap mass spectrometer. Ion maps of cholesterol in tissues were generated from voxels containing <1 cell, on average. Additionally, the challenges of imaging at the cellular level in terms of loss of sensitivity and longer analysis time are discussed. PMID:25486925

  3. Influence of the Laser Spot Size, Focal Beam Profile, and Tissue Type on the Lipid Signals Obtained by MALDI-MS Imaging in Oversampling Mode

    NASA Astrophysics Data System (ADS)

    Wiegelmann, Marcel; Dreisewerd, Klaus; Soltwisch, Jens

    2016-08-01

    To improve the lateral resolution in matrix-assisted laser desorption/ionization mass spectrometry imaging (MALDI-MSI) beyond the dimensions of the focal laser spot oversampling techniques are employed. However, few data are available on the effect of the laser spot size and its focal beam profile on the ion signals recorded in oversampling mode. To investigate these dependencies, we produced 2 times six spots with dimensions between ~30 and 200 μm. By optional use of a fundamental beam shaper, square flat-top and Gaussian beam profiles were compared. MALDI-MSI data were collected using a fixed pixel size of 20 μm and both pixel-by-pixel and continuous raster oversampling modes on a QSTAR mass spectrometer. Coronal mouse brain sections coated with 2,5-dihydroxybenzoic acid matrix were used as primary test systems. Sizably higher phospholipid ion signals were produced with laser spots exceeding a dimension of ~100 μm, although the same amount of material was essentially ablated from the 20 μm-wide oversampling pixel at all spot size settings. Only on white matter areas of the brain these effects were less apparent to absent. Scanning electron microscopy images showed that these findings can presumably be attributed to different matrix morphologies depending on tissue type. We propose that a transition in the material ejection mechanisms from a molecular desorption at large to ablation at smaller spot sizes and a concomitant reduction in ion yields may be responsible for the observed spot size effects. The combined results indicate a complex interplay between tissue type, matrix crystallization, and laser-derived desorption/ablation and finally analyte ionization.

  4. Bio-inspired networks for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Han, Bing; Huang, Yuanlin; Li, Ruopeng; Peng, Qiang; Luo, Junyi; Pei, Ke; Herczynski, Andrzej; Kempa, Krzysztof; Ren, Zhifeng; Gao, Jinwei

    2014-11-01

    Modern optoelectronics needs development of new materials characterized not only by high optical transparency and electrical conductivity, but also by mechanical strength, and flexibility. Recent advances employ grids of metallic micro- and nanowires, but the overall performance of the resulting material composites remains unsatisfactory. In this work, we propose a new strategy: application of natural scaffoldings perfected by evolution. In this context, we study two bio-inspired networks for two specific optoelectronic applications. The first network, intended for solar cells, light sources and similar devices, has a quasi-fractal structure and is derived directly from a chemically extracted leaf venation system. The second network is intended for touch screens and flexible displays, and is obtained by metalizing a spider’s silk web. We demonstrate that each of these networks attain an exceptional optoelectonic and mechanical performance for its intended purpose, providing a promising direction in the development of more efficient optoelectronic devices.

  5. Bio-inspired networks for optoelectronic applications.

    PubMed

    Han, Bing; Huang, Yuanlin; Li, Ruopeng; Peng, Qiang; Luo, Junyi; Pei, Ke; Herczynski, Andrzej; Kempa, Krzysztof; Ren, Zhifeng; Gao, Jinwei

    2014-01-01

    Modern optoelectronics needs development of new materials characterized not only by high optical transparency and electrical conductivity, but also by mechanical strength, and flexibility. Recent advances employ grids of metallic micro- and nanowires, but the overall performance of the resulting material composites remains unsatisfactory. In this work, we propose a new strategy: application of natural scaffoldings perfected by evolution. In this context, we study two bio-inspired networks for two specific optoelectronic applications. The first network, intended for solar cells, light sources and similar devices, has a quasi-fractal structure and is derived directly from a chemically extracted leaf venation system. The second network is intended for touch screens and flexible displays, and is obtained by metalizing a spider's silk web. We demonstrate that each of these networks attain an exceptional optoelectonic and mechanical performance for its intended purpose, providing a promising direction in the development of more efficient optoelectronic devices.

  6. Optoelectronic semiconductor device and method of fabrication

    DOEpatents

    Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Fan, Shanhui; Yu, Zongfu

    2014-11-25

    An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

  7. Opto-electronic oscillators having optical resonators

    NASA Technical Reports Server (NTRS)

    Yao, Xiaotian Steve (Inventor); Maleki, Lutfollah (Inventor); Ilchenko, Vladimir (Inventor)

    2003-01-01

    Systems and techniques of incorporating an optical resonator in an optical part of a feedback loop in opto-electronic oscillators. This optical resonator provides a sufficiently long energy storage time and hence to produce an oscillation of a narrow linewidth and low phase noise. Certain mode matching conditions are required. For example, the mode spacing of the optical resonator is equal to one mode spacing, or a multiplicity of the mode spacing, of an opto-electronic feedback loop that receives a modulated optical signal and to produce an electrical oscillating signal.

  8. Using optoelectronic sensors in the system PROTEUS

    NASA Astrophysics Data System (ADS)

    Zyczkowski, M.; Szustakowski, M.; Ciurapinski, W.; Piszczek, M.

    2010-10-01

    The paper presents the concept of optoelectronic devices for human protection in rescue activity. The system consists of an ground robots with predicted sensor. The multisensor construction of the system ensures significant improvement of security of using on-situ like chemical or explosive sensors. The article show a various scenario of use for individual sensor in system PROTEUS.

  9. Trends in optoelectronic perimeter security sensors

    NASA Astrophysics Data System (ADS)

    Szustakowski, Mieczyslaw; Ciurapinski, Wiesław M.; Zyczkowski, Marek

    2007-10-01

    New trends in development of optoelectronic and radar systems with mixed technologies for detection, identification and visualization for critical infrastructure protection are presented. Network-based communication as well as new algorithms of intelligent vision surveillance and image fusion is described.

  10. Efficient Optoelectronics Teaching in Undergraduate Engineering Curriculum

    ERIC Educational Resources Information Center

    Matin, M. A.

    2005-01-01

    The Engineering Department's vision for undergraduate education for the next century is to develop a set of laboratory experiences that are thoughtfully sequenced and integrated to promote the full development of students in all courses. Optoelectronics is one of the most important and most demanding courses in Electrical and Computer Engineering.…

  11. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott; Lewis, Larry Neil; Cella, James Anthony; Shiang, Joseph John

    2011-11-01

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  12. Polymer optoelectronic structures for retinal prosthesis.

    PubMed

    Gautam, Vini; Narayan, K S

    2014-01-01

    This commentary highlights the effectiveness of optoelectronic properties of polymer semiconductors based on recent results emerging from our laboratory, where these materials are explored as artificial receptors for interfacing with the visual systems. Organic semiconductors based polymer layers in contact with physiological media exhibit interesting photophysical features, which mimic certain natural photoreceptors, including those in the retina. The availability of such optoelectronic materials opens up a gateway to utilize these structures as neuronal interfaces for stimulating retinal ganglion cells. In a recently reported work entitled "A polymer optoelectronic interface provides visual cues to a blind retina," we utilized a specific configuration of a polymer semiconductor device structure to elicit neuronal activity in a blind retina upon photoexcitation. The elicited neuronal signals were found to have several features that followed the optoelectronic response of the polymer film. More importantly, the polymer-induced retinal response resembled the natural response of the retina to photoexcitation. These observations open up a promising material alternative for artificial retina applications.

  13. GaAs optoelectronic neuron arrays.

    PubMed

    Lin, S; Grot, A; Luo, J; Psaltis, D

    1993-03-10

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10(4) cm(-2) are discussed.

  14. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  15. OSA proceedings on picosecond electronics and optoelectronics

    SciTech Connect

    Sollner, T.C.L.G. . Lincoln Lab.); Bloom, D.M. . Edward L. Ginzton Lab.)

    1989-01-01

    This book presents an introduction to optical communications. Systems considerations of this important application of optoelectronics are used to provide the motivation for many of the papers that follow. The authors are also concerned with another optoelectronic application, the measurement of phenomena that take place on a picosecond time scale. Short optical or electrical pulses are used to sample the parameter of interest, usually electric fields, in electronic or optoelectronic devices and circuits. Several methods of sampling are described, as are improvements to components that make up these systems. The authors address the electronic and optoelectronic components that lay the foundation for the systems considered above. Diode laser chirping, picosecond optical pulse amplifiers, a spread-spectrum approach to modulation, and two novel methods of picosecond pulse synthesis are discussed. Papers on tunneling and resonant tunneling are presented. Devices based on these effects have promise in high-speed electronics. Several papers investigate the speed of electron tunneling between two reservoirs and the effect of speed on device performance. Resonant-tunneling diode switches are also considered. This book also covers transistors as well as studies of carrier transport on the picosecond time scale. Excellent results for silicon FETs are given, demonstrating the great flexibility of that established technology.

  16. Ferroelectric/Optoelectronic Memory/Processor

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita; Thakoor, Anilkumar P.

    1992-01-01

    Proposed hybrid optoelectronic nonvolatile analog memory and data processor comprises planar array of microscopic photosensitive ferroelectric capacitors performing massively parallel analog computations. Processors overcome electronic crosstalk and limitations on number of input/output contacts inherent in electronic implementations of large interconnection arrays. Used in general optical computing, recognition of patterns, and artificial neural networks.

  17. Optoelectronic Inner-Product Neural Associative Memory

    NASA Technical Reports Server (NTRS)

    Liu, Hua-Kuang

    1993-01-01

    Optoelectronic apparatus acts as artificial neural network performing associative recall of binary images. Recall process is iterative one involving optical computation of inner products between binary input vector and one or more reference binary vectors in memory. Inner-product method requires far less memory space than matrix-vector method.

  18. Hybrid optoelectronic neurocomputer: variants of realization

    NASA Astrophysics Data System (ADS)

    Evtikhiev, Nickolay N.; Starikov, Rostislav S.; Scherbakov, Igor B.; Gaponov, Alexandr E.; Onyky, Boris N.

    1995-04-01

    The optoelectronic devices are the most effective for realization in the form of the vector- matrix multiplier. Proposed optoelectronic neurocomputers (OENC) consist of optical vector- matrix multiplier (OVMM), random access memory (RAM) and electronic control system. There are two variants of realization. The first neurocomputer scheme includes OVMM based on MAOM -- multichannel multifrequency acousto-optic modulator (Bragg cell). MAOM is the fastest up-to-date spatial light modulator. The second neurocomputer is constructed on the basis of planar OVMM (POVMM). Vector-matrix multiplication in POVMM is executed in a very small volume. The POVMM consists of matrix of light emitting diodes and array of linear photodetectors. A special computer program `NEUROEMULATOR' was designed to learn and to test performance of neural networks. Neural networks were trained with gradient and stochastic algorithms. The paper presents results of computer simulation and hardware implementation of neural networks.

  19. Block copolymers for opto-electronics

    NASA Astrophysics Data System (ADS)

    Sun, Sam-Shajing; Fan, Zhen; Wang, Yiqing; Taft, Charles; Haliburton, James H.; Maaref, Shahin; Ledbetter, Abram J.; Bonner, Carl E.

    2004-05-01

    A D(donor)-B(bridge)-A(acceptor)-B(bridge)-type block copolymer system has been developed and preliminarily examined for potential opto-electronic photovoltaic functions. The unique feature of the device includes a primary DBAB-type block copolymer backbone, where D and A are conjugated donor and acceptor polymer blocks, and B is a non-conjugated and flexible chain, a π orbital stacked and conjugated chain self-assembled and ordered "secondary structure", and a donor/acceptor asymmetric layers sandwiched D/A columnar "tertiary structure". This structure is expected to improve photovoltaic power conversion efficiency significantly in comparison to most existing organic or polymeric donor/acceptor binary photovoltaic systems due to the reduction of "exciton loss", the "carrier loss", as well as the "photon loss" via three-dimensional space and energy level optimizations. Preliminary experimental results revealed better morphology and opto-electronic properties of DBAB vs. D/A blends.

  20. Optoelectronic Systems Trained With Backpropagation Through Time.

    PubMed

    Hermans, Michiel; Dambre, Joni; Bienstman, Peter

    2015-07-01

    Delay-coupled optoelectronic systems form promising candidates to act as powerful information processing devices. In this brief, we consider such a system that has been studied before in the context of reservoir computing (RC). Instead of viewing the system as a random dynamical system, we see it as a true machine-learning model, which can be fully optimized. We use a recently introduced extension of backpropagation through time, an optimization algorithm originally designed for recurrent neural networks, and use it to let the network perform a difficult phoneme recognition task. We show that full optimization of all system parameters of delay-coupled optoelectronics systems yields a significant improvement over the previously applied RC approach.

  1. Terahertz optoelectronics with surface plasmon polariton diode.

    PubMed

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  2. Technologies for highly parallel optoelectronic integrated circuits

    SciTech Connect

    Lear, K.L.

    1994-10-01

    While summarily reviewing the range of optoelectronic integrated circuits (OEICs), this paper emphasizes technology for highly parallel optical interconnections. Market volume and integration suitability considerations highlight board-to-board interconnects within systems as an initial insertion point for large OEIC production. The large channel count of these intrasystem interconnects necessitates two-dimensional laser transmitter and photoreceiver arrays. Surface normal optoelectronic components are promoted as a basis for OEICs in this application. An example system is discussed that uses vertical cavity surface emitting lasers for optical buses between layers of stacked multichip modules. Another potentially important application for highly parallel OEICs is optical routing or packet switching, and examples of such systems based on smart pixels are presented.

  3. Optoelectronic Instruments For Analysis Of Surface Defects

    NASA Technical Reports Server (NTRS)

    Collins, J. David; Mueller, Robert P.; Davis, Richard M.; Gleman, Stuart M.; Hallberg, Carl G.; Thayer, Stephen W.; Thompson, David L.; Thompson, James E.

    1995-01-01

    Family of portable optoelectronic instruments developed to facilitate inspection of surface flaws like gouges, scratches, raised metal, and dents on large metal workpieces subject to surface-finish requirements. Instrument brought to workpiece and semiautomatically makes electronic record of three-dimensional shape of flaw. Entire inspection process takes only minutes. Prototype instrument includes structured-light microscope. Concept involves projection of known pattern of light onto surface inspected. Topography of surface determined from distortion of pattern as viewed through instrument.

  4. Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

    SciTech Connect

    Huang, Bing; Yoon, Mina; Smith, Sean C; Wei, Su-Huai; Deng, Hui-Xiong; Liu, Feng; Lee, Hoonkyung; Sumpter, Bobby G

    2014-01-01

    Silicon is arguably the best electronic material, but not as good an optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS) shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable bandgap. At low hydrogen concentrations, four ground states of single- and double-side hydrogenated BS are characterized with dipole-allowed direct (or quasidirect) bandgaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-side hydrogenated BS structures exhibit direct (or quasidirect) bandgaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high-efficiency, optoelectronic applications.

  5. Analog current mode analog/digital converter

    NASA Technical Reports Server (NTRS)

    Hadidi, Khayrollah (Inventor)

    1996-01-01

    An improved subranging or comparator circuit is provided for an analog-to-digital converter. As a subranging circuit, the circuit produces a residual signal representing the difference between an analog input signal and an analog of a digital representation. This is achieved by subdividing the digital representation into two or more parts and subtracting from the analog input signal analogs of each of the individual digital portions. In another aspect of the present invention, the subranging circuit comprises two sets of differential input pairs in which the transconductance of one differential input pair is scaled relative to the transconductance of the other differential input pair. As a consequence, the same resistor string may be used for two different digital-to-analog converters of the subranging circuit.

  6. Hybrid analog-digital associative neural network

    NASA Technical Reports Server (NTRS)

    Moopenn, Alexander W. (Inventor); Thakoor, Anilkumar P. (Inventor); Lambe, John J. (Inventor)

    1989-01-01

    Random access memory is used to store synaptic information in the form of a matrix of rows and columns of binary digits. N rows read in sequence are processed through switches and resistors, and a summing amplifier to N neural amplifiers in sequence, one row for each amplifier, using a first array of sample-and-hold devices S/H1 for commutation. The outputs of the neural amplifiers are stored in a second array of sample-and-hold devices S/H2 so that after N rows are processed, all of said second array of sample-and-hold devices are updated. A second memory may be added for binary values of 0 and -1, and processed simultaneously with the first to provide for values of 1, 0, and -1, the results of which are combined in a difference amplifier.

  7. Analog/Digital System for Germanium Thermometer

    NASA Technical Reports Server (NTRS)

    Woodhouse, Christopher

    1988-01-01

    Electronic system containing analog and digital circuits makes high-precision, four-wire measurements of resistance of each germanium resistance thermometer (GRT) in array of devices, using alternating current (ac) of 1 micro-A. At end measurement interval, contents of negative register subtracted from positive one, resulting in very-narrow-band synchronous demodulation of carrier wave and suppression of out-of-band noise. Microprocessor free to perform other duties after measurement complete. Useful in noisy terrestrial environments encountered in factories.

  8. A current-excited triple-time-voltage oversampling method for bio-impedance model for cost-efficient circuit system.

    PubMed

    Yan Hong; Yong Wang; Wang Ling Goh; Yuan Gao; Lei Yao

    2015-08-01

    This paper presents a mathematic method and a cost-efficient circuit to measure the value of each component of the bio-impedance model at electrode-electrolyte interface. The proposed current excited triple-time-voltage oversampling (TTVO) method deduces the component values by solving triple simultaneous electric equation (TSEE) at different time nodes during a current excitation, which are the voltage functions of time. The proposed triple simultaneous electric equations (TSEEs) allows random selections of the time nodes, hence numerous solutions can be obtained during a single current excitation. Following that, the oversampling approach is engaged by averaging all solutions of multiple TSEEs acquired after a single current excitation, which increases the practical measurement accuracy through the improvement of the signal-to-noise ratio (SNR). In addition, a print circuit board (PCB) that consists a switched current exciter and an analog-to-digital converter (ADC) is designed for signal acquisition. This presents a great cost reduction when compared against other instrument-based measurement data reported [1]. Through testing, the measured values of this work is proven to be in superb agreements on the true component values of the electrode-electrolyte interface model. This work is most suited and also useful for biological and biomedical applications, to perform tasks such as stimulations, recordings, impedance characterizations, etc.

  9. Assembly of opto-electronic module with improved heat sink

    DOEpatents

    Chan, Benson; Fortier, Paul Francis; Freitag, Ladd William; Galli, Gary T.; Guindon, Francois; Johnson, Glen Walden; Letourneau, Martial; Sherman, John H.; Tetreault, Real

    2004-11-23

    A heat sink for a transceiver optoelectronic module including dual direct heat paths and a structure which encloses a number of chips having a central web which electrically isolates transmitter and receiver chips from each other. A retainer for an optical coupler having a port into which epoxy is poured. An overmolded base for an optoelectronic module having epoxy flow controller members built thereon. Assembly methods for an optoelectronic module including gap setting and variation of a TAB bonding process.

  10. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  11. Optoelectronic and Photonic Devices for Optical Communications Systems

    NASA Technical Reports Server (NTRS)

    Kim, Q.; Kayali, S.

    2000-01-01

    General overview of optical communications was described. Efforts were concentrated for the reliability concerns of the optoelectronic and photonic parts needed for potential applications in space environments.

  12. Shallow halogen vacancies in halide optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Du, Mao-Hua

    2014-11-01

    Halogen vacancies (VH ) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., C H3N H3Pb I3 and TlBr. Both C H3N H3Pb I3 and TlBr have been found to have shallow VH , in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., C H3N H3Pb I3 , C H3N H3Sn I3 (photovoltaic materials), TlBr, and CsPbB r3 (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VH is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of n s2 ions both play important roles in creating shallow VH in halides such as C H3N H3Pb I3 , C H3N H3Sn I3 , and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH , such as those with large cation-cation distances and low anion coordination numbers and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH . The results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.

  13. Shallow halogen vacancies in halide optoelectronic materials

    DOE PAGES

    Shi, Hongliang; Du, Mao -Hua

    2014-11-05

    Halogen vacancies (VH) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., CH3NH3PbI3 and TlBr. Both CH3NH3PbI3 and TlBr have been found to have shallow VH, in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., CH3NH3PbI3, CH3NH3SnI3 (photovoltaic materials), TlBr, and CsPbBr3, (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VHmore » is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of ns2 ions both play important roles in creating shallow VH in halides such as CH3NH3PbI3, CH3NH3SnI3, and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH, such as those with long cation-cation distances and low anion coordination numbers, and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH. Furthermore, the results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.« less

  14. In-situ nanochemistry for optoelectronics

    NASA Astrophysics Data System (ADS)

    Kim, Won Jin

    This thesis describes recent results on simple methods to arrange nanosize objects such as semiconductor nanocrystals, noble metal nanoparticles, and upconversion nanophosphors by means of top-down processes. Specific focus is directed towards approaches to produce predefined patterns of various nanostructure materials using optical lithography for direct writing of films for optoelectronic and electronic devices. To obtain photo-patternability, the nanostructure materials [for example semiconductor nanocrystals (CdSe, CdTe, PbSe), metallic nanoparticles (Ag), upconversion nanophosphors (Er3+/Yb 3+ or Tm3+/Yb3+ co-doped NaYF4 ), and transparent conducting oxide nanoparticles (ITO, ZnO)] were functionalized by incorporation of the functional ligand t-butoxycarbonyl (t-BOC) which has an acid-labile moiety. The t-BOC group undergoes a cleavage, when subjected to UV irradiation in the presence of a photo acid generator (PAG) to releases isobutene and carbon dioxide. Depending on the need of the application, either the exposed regions (negative pattern) or the non-exposed regions (positive pattern) could be developed from the exposed films by appropriate solvent selection. The photo exposed regions of the film are rendered hydrophilic due to the degradation of the t-BOC, the un-exposed regions remain hydrophobic. This solubility change in the QDs is the basis of their patternablity. The un-exposed regions can be removed to obtain the negative pattern by washing with hydrophobic solvents, whereas the exposed regions can be selectively removed to obtain positive pattern by washing with hydrophilic solvents. This change in the surface chemistry results in the ability to photo-pattern the various nanostructure materials where desired for a number of optoelectronic device geometries. We demonstrate that the ultimate resolution (linewidth and spacing) of this technique is below submicron. Details on technological aspects concerning nanoparticle patterning as well as practical

  15. Optical thin film metrology for optoelectronics

    NASA Astrophysics Data System (ADS)

    Petrik, Peter

    2012-12-01

    The manufacturing of optoelectronic thin films is of key importance, because it underpins a significant number of industries. The aim of the European joint research project for optoelectronic thin film characterization (IND07) in the European Metrology Research Programme of EURAMET is to develop optical and X-ray metrologies for the assessment of quality as well as key parameters of relevant materials and layer systems. This work is intended to be a step towards the establishment of validated reference metrologies for the reliable characterization, and the development of calibrated reference samples with well-defined and controlled parameters. In a recent comprehensive study (including XPS, AES, GD-OES, GD-MS, SNMS, SIMS, Raman, SE, RBS, ERDA, GIXRD), Abou-Ras et al. (Microscopy and Microanalysis 17 [2011] 728) demonstrated that most characterization techniques have limitations and bottle-necks, and the agreement of the measurement results in terms of accurate, absolute values is not as perfect as one would expect. This paper focuses on optical characterization techniques, laying emphasis on hardware and model development, which determine the kind and number of parameters that can be measured, as well as their accuracy. Some examples will be discussed including optical techniques and materials for photovoltaics, biosensors and waveguides.

  16. Optoelectronic pH Meter: Further Details

    NASA Technical Reports Server (NTRS)

    Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.

    2009-01-01

    A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

  17. Optoelectronic inventory system for special nuclear material

    SciTech Connect

    Sieradzki, F.H.

    1994-01-01

    In support of the Department of Energy`s Dismantlement Program, the Optoelectronics Characterization and Sensor Development Department 2231 at Sandia National Laboratories/New Mexico has developed an in situ nonintrusive Optoelectronic Inventory System (OIS) that has the potential for application wherever periodic inventory of selected material is desired. Using a network of fiber-optic links, the OIS retrieves and stores inventory signatures from data storage devices (which are permanently attached to material storage containers) while inherently providing electromagnetic pulse immunity and electrical noise isolation. Photovoltaic cells (located within the storage facility) convert laser diode optic power from a laser driver to electrical energy. When powered and triggered, the data storage devices sequentially output their digital inventory signatures through light-emitting diode/photo diode data links for retrieval and storage in a mobile data acquisition system. An item`s exact location is determined through fiber-optic network and software design. The OIS provides an on-demand method for obtaining acceptable inventory reports while eliminating the need for human presence inside the material storage facility. By using modularization and prefabricated construction with mature technologies and components, an OIS installation with virtually unlimited capacity can be tailored to the customer`s requirements.

  18. Reconfigurable Optical Interconnections Using Dynamic Optoelectronic Holograms

    NASA Astrophysics Data System (ADS)

    Schulze, Elmar

    1988-04-01

    Increasing complexity and processing speed of electronic circuits and a high device density have led to serious problems in electrical interconnections. Their limitations arise from their signal transmission capacity. power consumption. crosstalk. and reliability. Optical links may solve such problems by offering high data rates of several gigabits per second. large fanouts of up to 100 loads. good reliability and less power expenditure. Optical fibers, integrated optical waveguides or free-space transmission links may be applicable. For the free-space links, lenses. mirrors and holograms can be used to guide the light waves. In this paper, reconfigurable optical interconnection schemes are proposed and described which are based on optoelectronic holograms. Their interference patterns can be changed dynamically. To establish connections as free-space links, the light beams emitted from even hundreds of light sources are imaged onto an array of small dynamic holograms. Their interference patterns are optically and electronically controllable. These holograms diffract and focus each of the incident light beams individually onto the receiving photo-diodes. By changing the hologram interference patterns dynamically. an optical switch is obtained. It renders the establishment of reconfigurable optical interconnections. As optoelectronic holograms very-high-resolution spatial light modulators are proposed.

  19. Architectures for optoelectronic analogs of self-organizing neural networks.

    PubMed

    Farhat, N H

    1987-06-01

    Architectures for partitioning optoelectronic analogs of neural nets into input-output and internal groups to form a multilayered net capable of self-organization, self-programming, and learning are described. The architectures and implementation ideas given describe a class of optoelectronic neural net modules that, when interfaced to a conventional computer controller, can impart to it artificial intelligence attributes.

  20. Six Classes of Diffraction-Based Optoelectronic Instruments

    NASA Technical Reports Server (NTRS)

    Spremo, Stevan; Fuhr, Peter; Schipper, John

    2003-01-01

    Six classes of diffraction-based optoelectronic instruments have been invented as means for wavelength-based processing of light. One family of anticipated applications lies in scientific instrumentation for studying chemical and physical reactions that affect and/or are affected differently by light of different wavelengths or different combinations of wavelengths. Another family of anticipated applications lies in optoelectronic communication systems.

  1. Optoelectronic hit/miss transform for screening cervical smear slides

    NASA Astrophysics Data System (ADS)

    Narayanswamy, R.; Turner, R. M.; McKnight, D. J.; Johnson, K. M.; Sharpe, J. P.

    1995-06-01

    An optoelectronic morphological processor for detecting regions of interest (abnormal cells) on a cervical smear slide using the hit/miss transform is presented. Computer simulation of the algorithm tested on 184 Pap-smear images provided 95% detection and 5% false alarm. An optoelectronic implementation of the hit/miss transform is presented, along with preliminary experimental results.

  2. Radiation Effects on Optoelectronic Devices in Space Missions

    NASA Technical Reports Server (NTRS)

    Johnston, Allan H.

    2006-01-01

    Radiation degradation of optoelectronic devices is discussed, including effects on optical emitters, detectors and optocouplers. The importance of displacement damage is emphasized, including the limitations of non-ionizing energy loss (NIEL) in normalizing damage. Failures of optoelectronics in fielded space systems are discussed, along with testing and qualification methods.

  3. Anthropogenic emissions of highly reactive volatile organic compounds in eastern Texas inferred from oversampling of satellite (OMI) measurements of HCHO columns

    NASA Astrophysics Data System (ADS)

    Zhu, Lei; Jacob, Daniel J.; Mickley, Loretta J.; Marais, Eloïse A.; Cohan, Daniel S.; Yoshida, Yasuko; Duncan, Bryan N.; González Abad, Gonzalo; Chance, Kelly V.

    2014-11-01

    Satellite observations of formaldehyde (HCHO) columns provide top-down constraints on emissions of highly reactive volatile organic compounds (HRVOCs). This approach has been used previously in the US to estimate isoprene emissions from vegetation, but application to anthropogenic emissions has been stymied by lack of a discernable HCHO signal. Here we show that temporal oversampling of HCHO data from the Ozone Monitoring Instrument (OMI) for 2005-2008 enables detection of urban and industrial plumes in eastern Texas including Houston, Port Arthur, and Dallas/Fort Worth. By spatially integrating the HCHO enhancement in the Houston plume observed by OMI we estimate an anthropogenic HCHO source of 250 ± 140 kmol h-1. This implies that anthropogenic HRVOC emissions in Houston are 4.8 ± 2.7 times higher than reported by the US Environmental Protection Agency inventory, and is consistent with field studies identifying large ethene and propene emissions from petrochemical industrial sources.

  4. Optoelectronic determination of insect presence in fruit

    NASA Astrophysics Data System (ADS)

    Shrestha, Bim P.; Guyer, Daniel E.; Ariana, Diwan P.

    2004-03-01

    Opto-electronic methods represent a potential to identify the presence of insect activities on or within agricultural commodities. Such measurements may detect actual insect presence or indirect secondary changes in the product resulting from past or present insect activities. Preliminary imaging studies have demonstrated some unique spectral characteristics of insect larvae on cherries. A detailed study on spectral characteristics of healthy and infested tart cherry tissue with and without larvae (Plum Curculio) was conducted for reflectance, transmittance and interactance modes for each of UV and visible/NIR light sources. The intensity of transmitted UV signals through the tart cherry was found to be weak; however, the spectral properties of UV light in reflectance mode has revealed some typical characteristics of larvae on healthy and infested tissue. The larvae on tissue were found to exhibit UV induced fluorescence signals in the range of 400-700 nm. Multi spectral imaging of the halved tart cherry has also corroborated this particular behavior of plum curculio larvae. The gray scale subtraction between corresponding pixels in these multi-spectral images has helped to locate the larvae precisely on the tart cherry tissue background, which otherwise was inseparable. The spectral characteristics of visible/NIR energy in transmittance and reflectance mode are capable of estimating the secondary effect of infestation in tart cherry tissue. The study has shown the shifting in peaks of reflected and transmitted signals from healthy and infested tissues and coincides with the concept of browning of tissue at cell level as a process of infestation. Interactance study has been carried out to study the possibility of coupling opto-electronic devices with the existing pitting process. The shifting of peaks has been observed for the normalized intensity of healthy and infested tissues. The study has been able to establish the inherent spectral characteristic of these

  5. Shallow halogen vacancies in halide optoelectronic materials

    SciTech Connect

    Shi, Hongliang; Du, Mao -Hua

    2014-11-05

    Halogen vacancies (VH) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., CH3NH3PbI3 and TlBr. Both CH3NH3PbI3 and TlBr have been found to have shallow VH, in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., CH3NH3PbI3, CH3NH3SnI3 (photovoltaic materials), TlBr, and CsPbBr3, (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VH is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of ns2 ions both play important roles in creating shallow VH in halides such as CH3NH3PbI3, CH3NH3SnI3, and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH, such as those with long cation-cation distances and low anion coordination numbers, and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH. Furthermore, the results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.

  6. Optoelectronic date acquisition system based on FPGA

    NASA Astrophysics Data System (ADS)

    Li, Xin; Liu, Chunyang; Song, De; Tong, Zhiguo; Liu, Xiangqing

    2015-11-01

    An optoelectronic date acquisition system is designed based on FPGA. FPGA chip that is EP1C3T144C8 of Cyclone devices from Altera corporation is used as the centre of logic control, XTP2046 chip is used as A/D converter, host computer that communicates with the date acquisition system through RS-232 serial communication interface are used as display device and photo resistance is used as photo sensor. We use Verilog HDL to write logic control code about FPGA. It is proved that timing sequence is correct through the simulation of ModelSim. Test results indicate that this system meets the design requirement, has fast response and stable operation by actual hardware circuit test.

  7. Optoelectronic properties of nanocrystalline silicon composites

    NASA Astrophysics Data System (ADS)

    Posada Marin, Yury

    The interest in silicon at the nano-scale level has gained great impetus since the discovery in the last decade of its photoluminescence properties at room temperature; this characteristic has opened up the possibility of creating microelectronics with optical integrated capabilities and has been the main motivation for new research in photonics and optoelectronics applications. To date, the most cost effective technique used to make silicon nanoparticles is the electroetching of silicon wafers in HF electrolytes solutions; this method generates hydrogen-passivated particles by the electrochemical dispersion of bulk silicon. The ultrasonic fracturing of porous silicon structures produces a colloidal suspension of particles in a large variety of organic solvents that can be readily used as photoluminescent tags and to create new optical materials. Silicon nanoparticles can be also produced by sputtering Si-SiO 2, a technique that can render films with distributions of silicon crystallite sizes. This thesis presents the results of an optoelectronic study of nanocrystalline silicon produced by chemical electroetching of silicon wafers and RF-co sputtering of Si-SiO2. Herein are presented the experimental contributions of this work: the development of two novel materials: silica gel monoliths and microfilms doped with porous silicon nanoclusters that have showed blue shifted photoluminescence emission with intensities over five times higher than the original intensity from the native material used for the sol-gel preparation; the enhancement of the photoluminescence of porous silicon substrates by silica gel spin coating. Finally, through a charge transport study of nanocrystalline silicon in Si-SiO2 a relationship between the photoluminescence with the silicon crystallites sizes and concentrations is demonstrated and analyzed along with the diffusion length.

  8. Assembling silver nanowires using optoelectronic tweezers

    NASA Astrophysics Data System (ADS)

    Zhang, Shuailong; Cooper, Jonathan M.; Neale, Steve L.

    2016-03-01

    Light patterned dielectrophoresis or optoelectronic tweezers (OET) has been proved to be an effective micromanipulation technology for cell separation, cell sorting and control of cell interactions. Apart from being useful for cell biology experiments, the capability of moving small objects accurately also makes OET an attractive technology for other micromanipulation applications. In particular, OET has the potential to be used for efficiently and accurately assembling small optoelectronic/electronic components into circuits. This approach could produce a step change in the size of the smallest components that are routinely assembled; down from the current smallest standard component size of 400×200 μm (0402 metric) to components a few microns across and even nanostructured components. In this work, we have demonstrated the use of OET to manipulate conductive silver nanowires into different patterns. The silver nanowires (typical diameter: 60 nm; typical length: 10 μm) were suspended in a 15 mS/m solution of KCL in water and manipulated by positive dielectrophoresis force generated by OET. A proof-of-concept demonstration was also made to prove the feasibility of using OET to manipulate silver nanowires to form a 150-μm-long conductive path between two isolated electrodes. It can be seen that the resistance between two electrodes was effectively brought down to around 700 Ω after the silver nanowires were assembled and the solution evaporated. Future work in this area will focus on increasing the conductivity of these tracks, encapsulating the assembled silver nanowires to prevent silver oxidation and provide mechanical protection, which can be achieved via 3D printing and inkjet printing technology.

  9. Integrated NEMS and optoelectronics for sensor applications.

    SciTech Connect

    Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R.; Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade; Okandan, Murat; Peterson, Kenneth Allen

    2008-01-01

    This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

  10. An optoelectronic interferometric analog-to-digital converter

    NASA Astrophysics Data System (ADS)

    Evtikhiev, N. N.; Karinskii, S. S.; Mirovitskii, D. I.; Popkov, V. T.

    1987-02-01

    A high-speed optoelectronic analog-to-digital (A/D) converter utilizing waveguide interferometric modulators (WIMs) is analyzed in detail. A mathematical model is proposed which describes the relationship between the characteristics of WIMs in LiNbO3 and their manufacturing conditions. The requirements placed on the parameters of the manufacturing process for obtaining the desired modulator and optoelectronic A/D converter characteristics are determined. Results are presented of the R&D of a 4-bit optoelectronic A/D converter with a conversion rate of 160 MBit/s.

  11. Organic Optoelectronic Devices Employing Small Molecules

    NASA Astrophysics Data System (ADS)

    Fleetham, Tyler Blain

    Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, DeltaE DA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt

  12. Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

    NASA Astrophysics Data System (ADS)

    Liang, Yu Teng

    Over the past couple decades, fundamental research into carbon nanomaterials has produced a steady stream of groundbreaking physical science. Their record setting mechanical strength, chemical stability, and optoelectronic performance have fueled many optimistic claims regarding the breadth and pace of carbon nanotube and graphene integration. However, present synthetic, processing, and economic constraints have precluded these materials from many practical device applications. To overcome these limitations, novel synthetic techniques, processing methodologies, device geometries, and mechanistic insight were developed in this dissertation. The resulting advancements in material production and composite device performance have brought carbon nanomaterials ever closer to commercial implementation. For improved materials processing, vacuum co-deposition was first demonstrated as viable technique for forming carbon nanocomposite films without property distorting covalent modifications. Co-deposited nanoparticle, carbon nanotube, and graphene composite films enabled rapid device prototyping and compositional optimization. Cellulosic polymer stabilizers were then shown to be highly effective carbon nanomaterial dispersants, improving graphene production yields by two orders of magnitude in common organic solvents. By exploiting polarity interactions, iterative solvent exchange was used to further increase carbon nanomaterial dispersion concentrations by an additional order of magnitude, yielding concentrated inks. On top of their low causticity, these cellulosic nanomaterial inks have highly tunable viscosities, excellent film forming capacity, and outstanding thermal stability. These processing characteristics enable the efficient scaling of carbon nanomaterial coatings and device production using existing roll-to-roll fabrication techniques. Utilizing these process improvements, high-performance gas sensing, energy storage, transparent conductor, and photocatalytic

  13. Magnetometer Based on Optoelectronic Microwave Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Strekalov, Dmitry; Matsko, Andrey

    2005-01-01

    proposed instrument, intended mainly for use as a magnetometer, would include an optoelectronic oscillator (OEO) stabilized by an atomic cell that could play the role of a magnetically tunable microwave filter. The microwave frequency would vary with the magnetic field in the cell, thereby providing an indication of the magnetic field. The proposed magnetometer would offer a combination of high accuracy and high sensitivity, characterized by flux densities of less than a picotesla. In comparison with prior magnetometers, the proposed magnetometer could, in principle, be constructed as a compact, lightweight instrument: It could fit into a package of about 10 by 10 by 10 cm and would have a mass <0.5 kg. As described in several prior NASA Tech Briefs articles, an OEO is a hybrid of photonic and electronic components that generates highly spectrally pure microwave radiation, and optical radiation modulated by the microwave radiation, through direct conversion between laser light and microwave radiation in an optoelectronic feedback loop. As used here, "atomic cell" signifies a cell containing a vapor, the constituent atoms of which can be made to undergo transitions between quantum states, denoted hyperfine levels, when excited by light in a suitable wavelength range. The laser light must be in this range. The energy difference between the hyperfine levels defines the microwave frequency. In the proposed instrument (see figure), light from a laser would be introduced into an electro-optical modulator (EOM). Amplitude-modulated light from the exit port of the EOM would pass through a fiber-optic splitter having two output branches. The light in one branch would be sent through an atomic cell to a photodiode. The light in the other branch would constitute the microwave-modulated optical output. Part of the light leaving the atomic cell could also be used to stabilize the laser at a frequency in the vicinity of the desired hyperfine or other quantum transition. The

  14. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    DOE PAGES

    Du, Mao -Hua; Shi, Hongliang; Ming, Wenmei

    2016-03-29

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of ns2 ions (e.g., Tl+, Pb2+, and Bi3+). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain Bi3+, which is also an ns2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of bandmore » gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected Bi3+ based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n-BiSeBr, p-BiSI, and p-BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p-type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. As a result, defect calculations indeed show that

  15. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Ming, Wenmei; Du, Mao-Hua

    2016-03-01

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of n s2 ions (e.g., T l+ , P b2 + , and B i3 + ). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain B i3 + , which is also an n s2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of band gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected B i3 + based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n -BiSeBr, p -BiSI, and p -BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p -type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. Defect calculations indeed show that the

  16. Optoelectronic performance issues in fiber-optic communications

    NASA Astrophysics Data System (ADS)

    Channin, D. J.

    1985-06-01

    The use of optoelectronic devices and components in fiber-optic communications systems is discussed. Optical power budget and signal fidelity, which govern fiber-optic system performance, are explained. The characteristics of isolated optoelectronic devices, which include bandwidths and noise, are described. Interaction of the characteristics of an optoelectronic source with the fiber-optic medium can limit the performance of the fiber-optic communications systems; these factors are examined. Modulation of light for signal transmission and the design constraints for fiber-optic transmitters and receivers because of modulation are discussed. The performance of the fiber-optic communications systems and the effect various optoelectronic devices and specifications have on the system's performance are considered. Analytical descriptions and quantitative examples of the phenomena reviewed are provided.

  17. Hybrid optoelectronic device with multiple bistable outputs

    NASA Astrophysics Data System (ADS)

    Costazo-Caso, Pablo A.; Jin, Yiye; Gelh, Michael; Granieri, Sergio; Siahmakoun, Azad

    2011-01-01

    Optoelectronic circuits which exhibit optical and electrical bistability with hysteresis behavior are proposed and experimentally demonstrated. The systems are based on semiconductor optical amplifiers (SOA), bipolar junction transistors (BJT), PIN photodiodes (PD) and laser diodes externally modulated with integrated electro-absorption modulators (LD-EAM). The device operates based on two independent phenomena leading to both electrical bistability and optical bistability. The electrical bistability is due to the series connection of two p-i-n structures (SOA, BJT, PD or LD) in reverse bias. The optical bistability is consequence of the quantum confined Stark effect (QCSE) in the multi-quantum well (MQW) structure in the intrinsic region of the device. This effect produces the optical modulation of the transmitted light through the SOA (or reflected from the PD). Finally, because the optical transmission of the SOA (in reverse bias) and the reflected light from the PD are so small, a LD-EAM modulated by the voltage across these devices are employed to obtain a higher output optical power. Experiments show that the maximum switching frequency is in MHz range and the rise/fall times lower than 1 us. The temporal response is mainly limited by the electrical capacitance of the devices and the parasitic inductances of the connecting wires. The effects of these components can be reduced in current integration technologies.

  18. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott; Lewis, Larry Neil; Cella, James Anthony; Shiang, Joseph John

    2011-11-08

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## wherein R.sup.1 and R.sup.2 are independently alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.5is H or CHO; R.sup.3 and R.sup.4 are independently hydrogen, alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.11 and R.sup.12 taken together form a substituted or unsubstituted monocyclic or bicyclic heteroaromatic ring; R.sup.13 is independently at each occurrence halo, nitro, hydroxy, amino, alkyl, aryl, arylalkyl, alkoxy, substituted alkoxy, substituted alkyl, substituted aryl, or substituted arylalkyl; Ar is aryl, heteroaryl, substituted aryl, substituted heteroaryl, or a combination thereof; X is selected from a direct bond, alky, substituted alkyl, and combinations thereof; Y is CHO or NH.sub.2; Z is CHO or NH.sub.2 where Z does not equal Y; and p is 0, 1 or 2. The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  19. Assessment of dental plaque by optoelectronic methods

    NASA Astrophysics Data System (ADS)

    Negrutiu, Meda-Lavinia; Sinescu, Cosmin; Bortun, Cristina Maria; Levai, Mihaela-Codrina; Topala, Florin Ionel; Crǎciunescu, Emanuela Lidia; Cojocariu, Andreea Codruta; Duma, Virgil Florin; Podoleanu, Adrian Gh.

    2016-03-01

    The formation of dental biofilm follows specific mechanisms of initial colonization on the surface, microcolony formation, development of organized three dimensional community structures, and detachment from the surface. The structure of the plaque biofilm might restrict the penetration of antimicrobial agents, while bacteria on a surface grow slowly and display a novel phenotype; the consequence of the latter is a reduced sensitivity to inhibitors. The aim of this study was to evaluate with different optoelectronic methods the morphological characteristics of the dental biofilm. The study was performed on samples from 25 patients aged between 18 and 35 years. The methods used in this study were Spectral Domain Optical Coherence Tomography (SD-OCT) working at 870 nm for in vivo evaluations and Scanning Electron Microscopy (SEM) for validations. For each patient a sample of dental biofilm was obtained directly from the vestibular surface of the teeth's. SD-OCT produced C- and B-scans that were used to generate three dimensional (3D) reconstructions of the sample. The results were compared with SEM evaluations. The biofilm network was dramatically destroyed after the professional dental cleaning. OCT noninvasive methods can act as a valuable tool for the 3D characterization of dental biofilms.

  20. Emissive polymeric materials for optoelectronic devices

    SciTech Connect

    Shiang, Joseph John; Chichak, Kelly Scott; Cella, James Anthony; Lewis, Larry Neil; Janora, Kevin Henry

    2011-07-05

    Polymers including at least one structural unit derived from a compound of formula I or including at least one pendant group of formula II may be used in optoelectronic devices ##STR00001## wherein R.sup.1, R.sup.3, R.sup.4 and R.sup.6 are independently hydrogen, alkyl, alkoxy, oxaalkyl, alkylaryl, aryl, arylalkyl, heteroaryl, substituted alkyl; substituted alkoxy, substituted oxaalkyl, substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted heteroaryl; R.sup.1a is hydrogen or alkyl; R.sup.2 is alkylene, substituted alkylene, oxaalkylene, CO, or CO.sub.2; R.sup.2a is alkylene; R.sup.5 is independently at each occurrence hydrogen, alkyl, alkylaryl, aryl, arylalkyl, alkoxy, carboxy, substituted alkyl; substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted alkoxy, X is halo, triflate, --B(OR.sup.1a).sub.2, or ##STR00002## located at the 2, 5- or 2, 7-positions; and L is derived from phenylpyridine, tolylpyridine, benzothienylpyridine, phenylisoquinoline, dibenzoquinozaline, fluorenylpyridine, ketopyrrole, 2-(1-naphthyl)benzoxazole)), 2-phenylbenzoxazole, 2-phenylbenzothiazole, coumarin, thienylpyridine, phenylpyridine, benzothienylpyridine, 3-methoxy-2-phenylpyridine, thienylpyridine, phenylimine, vinylpyridine, pyridylnaphthalene, pyridylpyrrole, pyridylimidazole, phenylindole, derivatives thereof or combinations thereof.

  1. Image stabilization for SWIR advanced optoelectronic device

    NASA Astrophysics Data System (ADS)

    Schiopu, Paul; Manea, Adrian; Cristea, Ionica; Grosu, Neculai; Craciun, Anca-Ileana; Craciun, Alexandru; Granciu, Dana

    2015-02-01

    At long ranges and under low visibility conditions, Advanced Optoelectronic Device provides the signal-to-noise ratio and image quality in the Short-wave Infra-red - SWIR (wavelengths between 1,1 ÷2,5 μm), significantly better than in the near wave infrared - NWIR and visible spectral bands [1,2]. The quality of image is nearly independent of the polarization in the incoming light, but it is influenced by the relative movement between the optical system and the observer (the operators' handshake), and the movement towards the support system (land and air vehicles). All these make it difficult to detect objectives observation in real time. This paper presents some systems enhance which the ability of observation and sighting through the optical systems without the use of the stands, tripods or other means. We have to eliminate the effect of "tremors of the hands" and the vibration in order to allow the use of optical devices by operators on the moving vehicles on land, on aircraft, or on boats, and to provide additional comfort for the user to track the moving object through the optical system, without losing the control in the process of detection and tracking. The practical applications of stabilization image process, in SWIR, are the most advanced part of the optical observation systems available worldwide [3,4,5]. This application has a didactic nature, because it ensures understanding by the students about image stabilization and their participation in research.

  2. Optoelectronic devices incorporating fluoropolymer compositions for protection

    SciTech Connect

    Chen, Xuming; Chum, Pak-Wing S.; Howard, Kevin E.; Lopez, Leonardo C.; Sumner, William C.; Wu, Shaofu

    2015-12-22

    The fluoropolymer compositions of the present invention generally incorporate ingredients comprising one or more fluoropolymers, an ultraviolet light protection component (hereinafter UV protection component), and optionally one or more additional ingredients if desired. The UV protection component includes a combination of at least one hindered tertiary amine (HTA) compound having a certain structure and a weight average molecular weight of at least 1000. This tertiary amine is used in combination with at least one organic, UV light absorbing compound (UVLA compound) having a weight average molecular weight greater than 500. When the HTA compound and the UVLA compound are selected according to principles of the present invention, the UV protection component provides fluoropolymer compositions with significantly improved weatherability characteristics for protecting underlying materials, features, structures, components, and/or the like. In particular, fluoropolymer compositions incorporating the UV protection component of the present invention have unexpectedly improved ability to resist blackening, coloration, or other de gradation that may be caused by UV exposure. As a consequence, devices protected by these compositions would be expected to have dramatically improved service life. The compositions have a wide range of uses but are particularly useful for forming protective layers in optoelectronic devices.

  3. GaAs-based optoelectronic neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H. (Inventor); Kim, Jae H. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

  4. Software for Use with Optoelectronic Measuring Tool

    NASA Technical Reports Server (NTRS)

    Ballard, Kim C.

    2004-01-01

    A computer program has been written to facilitate and accelerate the process of measurement by use of the apparatus described in "Optoelectronic Tool Adds Scale Marks to Photographic Images" (KSC-12201). The tool contains four laser diodes that generate parallel beams of light spaced apart at a known distance. The beams of light are used to project bright spots that serve as scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The computer program is applicable to a scene that contains the laser spots and that has been imaged in a square pixel format that can be imported into a graphical user interface (GUI) generated by the program. It is assumed that the laser spots and the distance(s) to be measured all lie in the same plane and that the plane is perpendicular to the line of sight of the camera used to record the image

  5. Terahertz biochip based on optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lu, Ja-Yu; Chen, Li-Jin; Kao, Tzeng-Fu; Chang, Hsu-Hao; Liu, An-Shyi; Yu, Yi-Chun; Wu, Ruey-Beei; Liu, Wei-Sheng; Chyi, Jen-Inn; Pan, Ci-Ling; Tsai, Ming-Cheng; Sun, Chi-Kuang

    2005-10-01

    The accurate detection of minute amounts of chemical and biological substances has been a major goal in bioanalytical technology throughout the twentieth century. Fluorescence dye labeling detection remains the effective analysis method, but it modifies the surroundings of molecules and lowering the precision of detection. An alternative label free detecting tool with little disturbance of target molecules is highly desired. Theoretical calculations and experiments have demonstrated that many biomolecules have intrinsic resonance due to vibration or rotation level transitions, allowing terahertz (THz)-probing technique as a potential tool for the label-free and noninvasive detection of biomolecules. In this paper, we first ever combined the THz optoelectronic technique with biochip technology to realize THz biosensing. By transferring the edge-coupled photonic transmitter into a thin glass substrate and by integrating with a polyethylene based biochip channel, near field THz detection of the biomolecules is demonstrated. By directly acquiring the absorption micro-spectrum in the THz range, different boiomecules can then be identified according to their THz fingerprints. For preliminary studies, the capability to identity different illicit drug powders is successfully demonstrated. This novel biochip sensing system has the advantages including label-free detection, high selectivity, high sensitivity, ease for sample preparation, and ease to parallel integrate with other biochip functionality modules. Our demonstrated detection capability allows specifying various illicit drug powders with weight of nano-gram, which also enables rapid identification with minute amounts of other important molecules including DNA, biochemical agents in terrorism warfare, explosives, viruses, and toxics.

  6. Recent progress in opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute

    2005-01-01

    The optoelectronic oscillator (OEO) is a unique device based on photonics techniques to generate highly spectrally pure microwave signals [1]. The development of the OEO was motivated by the need for high performance oscillators in the frequency range larger than 10 GHz, where conventional electronic oscillators have a number of limitations. These limitations typically stem from the product of fQ, where f is the oscillator frequency and Q is the quality factor of the resonator in the oscillator. In conventional resonators, whether electromagnetic or piezoelectric, this product is usually a constant. Thus, as the oscillator frequency is pushed higher, the quality factor degrades, resulting in degradation of the phase noise of the oscillator. An approach to mitigate the problem is to start with a very high quality signal in the 5 to 100 MHz range generated by a quartz oscillator and multiply the frequency to achieve the desired microwave signal. Here again, frequency multiplication also results in an increase of the phase noise by a factor of 2010gN, where N is the multiplication factor.

  7. Colloidal quantum dot materials for infrared optoelectronics

    NASA Astrophysics Data System (ADS)

    Arinze, Ebuka S.; Nyirjesy, Gabrielle; Cheng, Yan; Palmquist, Nathan; Thon, Susanna M.

    2015-09-01

    Colloidal quantum dots (CQDs) are an attractive material for optoelectronic applications because they combine flexible, low-cost solution-phase synthesis and processing with the potential for novel functionality arising from their nanostructure. Specifically, the bandgap of films composed of arrays of CQDs can be tuned via the quantum confinement effect for tailored spectral utilization. PbS-based CQDs can be tuned throughout the near and mid-infrared wavelengths and are a promising materials system for photovoltaic devices that harvest non-visible solar radiation. The performance of CQD solar cells is currently limited by an absorption-extraction compromise, whereby photon absorption lengths in the near infrared spectral regime exceed minority carrier diffusion lengths in the bulk films. Several light trapping strategies for overcoming this compromise and increasing the efficiency of infrared energy harvesting will be reviewed. A thin-film interference technique for creating multi-colored and transparent solar cells will be presented, and a discussion of designing plasmonic nanomaterials based on earth-abundant materials for integration into CQD solar cells is developed. The results indicate that it should be possible to achieve high absorption and color-tunability in a scalable nanomaterials system.

  8. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    DOEpatents

    Wang, Qingwu; Li, Wenguang; Jiang, Hua

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  9. Nanomedicine crystals-inspired optoelectronic device materials and processing

    NASA Astrophysics Data System (ADS)

    Fang, Yan; Wang, Fangzhang; Wu, Rong

    2012-02-01

    Aim: Organic, biological materials and soft matters with optoelectronic donors and acceptors are postulated to be novel optoelectronic device materials. Methods: Molecular self-assemblies of nanomedicine crystals are employed by inelastic electron tunneling interaction force, which is a quantum force to make basic units of organic, biological and soft matter with optoelectronic donors and acceptors to be enlarged from nanometers to micrometers on silicon chips. Results: Self-assembled topographic structures and corresponding conducting with kondo effects and photoluminescence properties of self-assembled nanomedicine crystal building blocks are demonstrated by conducting atomic force microscopy (C-AFM) images and current-voltage curves, and laser micro- photoluminescence (PL) spectra. By contrast to top-down processing, the bottom-up processing of molecular self-assembly is low cost on large scale industrial manufacturing. Conclusion: The self-assembled nanomedicine crystal building blocks with optoelectronic donors and acceptors are candidates of novel optoelectronic device materials to be in the emerging discipline of information technology (IT) in its broadest sense, i.e. bioelectronics & biosensors, optoelectronic devices, data storage devices; simple to complex quantum entanglements and superposition for quantum bits computing, a novel strategy for 2020 IT and beyond.

  10. Nanomedicine crystals-inspired optoelectronic device materials and processing

    NASA Astrophysics Data System (ADS)

    Fang, Yan; Wang, Fangzhang; Wu, Rong

    2011-11-01

    Aim: Organic, biological materials and soft matters with optoelectronic donors and acceptors are postulated to be novel optoelectronic device materials. Methods: Molecular self-assemblies of nanomedicine crystals are employed by inelastic electron tunneling interaction force, which is a quantum force to make basic units of organic, biological and soft matter with optoelectronic donors and acceptors to be enlarged from nanometers to micrometers on silicon chips. Results: Self-assembled topographic structures and corresponding conducting with kondo effects and photoluminescence properties of self-assembled nanomedicine crystal building blocks are demonstrated by conducting atomic force microscopy (C-AFM) images and current-voltage curves, and laser micro- photoluminescence (PL) spectra. By contrast to top-down processing, the bottom-up processing of molecular self-assembly is low cost on large scale industrial manufacturing. Conclusion: The self-assembled nanomedicine crystal building blocks with optoelectronic donors and acceptors are candidates of novel optoelectronic device materials to be in the emerging discipline of information technology (IT) in its broadest sense, i.e. bioelectronics & biosensors, optoelectronic devices, data storage devices; simple to complex quantum entanglements and superposition for quantum bits computing, a novel strategy for 2020 IT and beyond.

  11. Optoelectronic System Measures Distances to Multiple Targets

    NASA Technical Reports Server (NTRS)

    Liebe, Carl Christian; Abramovici, Alexander; Bartman, Randall; Chapsky, Jacob; Schmalz, John; Coste, Keith; Litty, Edward; Lam, Raymond; Jerebets, Sergei

    2007-01-01

    An optoelectronic metrology apparatus now at the laboratory-prototype stage of development is intended to repeatedly determine distances of as much as several hundred meters, at submillimeter accuracy, to multiple targets in rapid succession. The underlying concept of optoelectronic apparatuses that can measure distances to targets is not new; such apparatuses are commonly used in general surveying and machining. However, until now such apparatuses have been, variously, constrained to (1) a single target or (2) multiple targets with a low update rate and a requirement for some a priori knowledge of target geometry. When fully developed, the present apparatus would enable measurement of distances to more than 50 targets at an update rate greater than 10 Hz, without a requirement for a priori knowledge of target geometry. The apparatus (see figure) includes a laser ranging unit (LRU) that includes an electronic camera (photo receiver), the field of view of which contains all relevant targets. Each target, mounted at a fiducial position on an object of interest, consists of a small lens at the output end of an optical fiber that extends from the object of interest back to the LRU. For each target and its optical fiber, there is a dedicated laser that is used to illuminate the target via the optical fiber. The targets are illuminated, one at a time, with laser light that is modulated at a frequency of 10.01 MHz. The modulated laser light is emitted by the target, from where it returns to the camera (photodetector), where it is detected. Both the outgoing and incoming 10.01-MHz laser signals are mixed with a 10-MHz local-oscillator to obtain beat notes at 10 kHz, and the difference between the phases of the beat notes is measured by a phase meter. This phase difference serves as a measure of the total length of the path traveled by light going out through the optical fiber and returning to the camera (photodetector) through free space. Because the portion of the path

  12. Optoelectronic Sensor System for Guidance in Docking

    NASA Technical Reports Server (NTRS)

    Howard, Richard T.; Bryan, Thomas C.; Book, Michael L.; Jackson, John L.

    2004-01-01

    The Video Guidance Sensor (VGS) system is an optoelectronic sensor that provides automated guidance between two vehicles. In the original intended application, the two vehicles would be spacecraft docking together, but the basic principles of design and operation of the sensor are applicable to aircraft, robots, vehicles, or other objects that may be required to be aligned for docking, assembly, resupply, or precise separation. The system includes a sensor head containing a monochrome charge-coupled- device video camera and pulsed laser diodes mounted on the tracking vehicle, and passive reflective targets on the tracked vehicle. The lasers illuminate the targets, and the resulting video images of the targets are digitized. Then, from the positions of the digitized target images and known geometric relationships among the targets, the relative position and orientation of the vehicles are computed. As described thus far, the VGS system is based on the same principles as those of the system described in "Improved Video Sensor System for Guidance in Docking" (MFS-31150), NASA Tech Briefs, Vol. 21, No. 4 (April 1997), page 9a. However, the two systems differ in the details of design and operation. The VGS system is designed to operate with the target completely visible within a relative-azimuth range of +/-10.5deg and a relative-elevation range of +/-8deg. The VGS acquires and tracks the target within that field of view at any distance from 1.0 to 110 m and at any relative roll, pitch, and/or yaw angle within +/-10deg. The VGS produces sets of distance and relative-orientation data at a repetition rate of 5 Hz. The software of this system also accommodates the simultaneous operation of two sensors for redundancy

  13. Optoelectronic properties of hexagonal boron nitride epilayers

    NASA Astrophysics Data System (ADS)

    Cao, X. K.; Majety, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2013-01-01

    This paper summarizes recent progress primarily achieved in authors' laboratory on synthesizing hexagonal boron nitride (hBN) epilayers by metal organic chemical vapor deposition (MCVD) and studies of their structural and optoelectronic properties. The structural and optical properties of hBN epilayers have been characterized by x-ray diffraction (XRD) and photoluminescence (PL) studies and compared to the better understood wurtzite AIN epilayers with a comparable energy bandgap. These MOCVD grown hBN epilayers exhibit highly efficient band-edge PL emission lines centered at around 5.5 eVat room temperature. The band-edge emission of hBN is two orders of magnitude higher than that of high quality AlN epilayers. Polarization-resolved PL spectroscopy revealed that hEN epilayers are predominantly a surface emission material, in which the band-edge emission with electric field perpendicular to the c-axis (Eemi⊥c) is about 1.7 times stronger than the component along the c-axis (Eemillc). This is in contrast to AIN, in which the band­ edge emission is known to be polarized along the c-axis, (Eemillc). Based on the graphene optical absorption concept, the estimated band-edge absorption coefficient of hBN is about 7x105 cm-1, which is more than 3 times higher than the value for AlN (~2x105 cm-1 . The hBN epilayer based photodetectors exhibit a sharp cut-off wavelength around 230 nm, which coincides with the band-edge PL emission peak and virtually no responses in the long wavelengths. The dielectric strength of hBN epilayers exceeds that of AlN and is greater than 4.5 MV/cm based on the measured result for an hBN epilayer released from the host sapphire substrate.

  14. Toward high-resolution optoelectronic retinal prosthesis

    NASA Astrophysics Data System (ADS)

    Palanker, Daniel; Huie, Philip; Vankov, Alexander; Asher, Alon; Baccus, Steven

    2005-04-01

    It has been already demonstrated that electrical stimulation of retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. Current retinal implants provide very low resolution (just a few electrodes), while several thousand pixels are required for functional restoration of sight. We present a design of the optoelectronic retinal prosthetic system that can activate a retinal stimulating array with pixel density up to 2,500 pix/mm2 (geometrically corresponding to a visual acuity of 20/80), and allows for natural eye scanning rather than scanning with a head-mounted camera. The system operates similarly to "virtual reality" imaging devices used in military and medical applications. An image from a video camera is projected by a goggle-mounted infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. Such a system provides a broad field of vision by allowing for natural eye scanning. The goggles are transparent to visible light, thus allowing for simultaneous utilization of remaining natural vision along with prosthetic stimulation. Optical control of the implant allows for simple adjustment of image processing algorithms and for learning. A major prerequisite for high resolution stimulation is the proximity of neural cells to the stimulation sites. This can be achieved with sub-retinal implants constructed in a manner that directs migration of retinal cells to target areas. Two basic implant geometries are described: perforated membranes and protruding electrode arrays. Possibility of the tactile neural stimulation is also examined.

  15. Semiselective Optoelectronic Sensors for Monitoring Microbes

    NASA Technical Reports Server (NTRS)

    Tabacco, Mary Beth; Chuang, Han; Taylor,Laura; Russo, Jaime

    2003-01-01

    Sensor systems are under development for use in real-time detection and quantitation of microbes in water without need for sampling. These systems include arrays of optical sensors; miniature, portable electronic data-acquisition circuits; and optoelectronic interfaces between the sensor arrays and data-acquisition circuits. These systems are intended for original use in long-term, inline monitoring of waterborne micro-organisms in water-reclamation systems aboard future spacecraft. They could also be adapted to similar terrestrial uses with respect to municipal water supplies, stored drinking water, and swimming water; for detecting low-level biological contamination in biotechnological, semiconductor, and pharmaceutical process streams; and in verifying the safety of foods and beverages. In addition, they could be adapted to monitoring of airborne microbes and of surfaces (e.g., to detect and/or quantitate biofilms). The designs of the sensors in these systems are based partly on those of sensors developed previously for monitoring airborne biological materials. The designs exploit molecular- recognition and fluorescence-spectroscopy techniques, such that in the presence of micro-organisms of interest, fluorescence signals change and the changes can be measured. These systems are characterized as semiselective because they respond to classes of micro-organisms and can be used to discriminate among the classes. This semiselectivity is a major aspect of the design: It is important to distinguish between (1) the principle of detection and quantitation of classes of micro-organisms by use of these sensors and (2) the principle of detection and quantitation of individual microbiological species by means of prior immuno-diagnostic and/or molecular-biology techniques. Detection of classes (in contradistinction to species) is particularly valuable when the exact nature of a contaminant is unknown.

  16. Nanocrystal Optoelectronic Devices in Plasmonic Nanojunctions

    NASA Astrophysics Data System (ADS)

    Evans, Kenneth Mellinger

    Optical trapping is an important tool for studying and manipulating nanoscale objects. Recent experiments have shown that subwavelength control of nanoparticles is possible by using patterned plasmonic nanostructures, rather than using a laser directly, to generate the electric fields necessary for particle trapping. In this thesis we present a theoretical model and experimental evidence for plasmonic optical trapping in nanoscale metal junctions. Further, we examine the use of the resultant devices as ultrasmall photodectors. Electromigrated nanojunctions, or "nanogaps", have a well-established plasmon resonance in the near-IR, leading to electric field enhancements large enough for single-molecule sensitivity in Surface-Enhance Raman (SERS) measurements. While molecule-based devices have been carefully studied, optically and electrically prob- ing individual quantum dots in nanoscale metal junctions remains relatively unex- plored. Plasmon-based optical trapping of quantum dots into prefabricated struc- tures could allow for inexpensive, scalable luminescent devices which are fully integrable into established silicon-based fabrication techniques. Additionally, these metal-nanocrystal-metal structures are ideal candidates to study optoelectronics in ultrasmall nanocrystals-based structures, as well as more exotic nanoscale phenom- ena such as blinking, plasmon-exciton interactions, and surface-enhanced fluorescence (SEF). We present experimental data supporting plasmon-based optical trapping in the nanogap geometry, and a corresponding numerical model of the electric field-generated forces in the nanogap geometry. Further, we give proof-of-concept measurements of photoconductance in the resultant quantum dot-based devices, as well as challenges and improvements moving forward.

  17. Vertical Organic Field-Effect Transistors for Integrated Optoelectronic Applications.

    PubMed

    Yu, Hyeonggeun; Dong, Zhipeng; Guo, Jing; Kim, Doyoung; So, Franky

    2016-04-27

    Direct integration of a vertical organic field-effect transistor (VOFET) and an optoelectronic device offers a single stacked, low power optoelectronic VOFET with high aperture ratios. However, a functional optoelectronic VOFET could not be realized because of the difficulty in fabricating transparent source and gate electrodes. Here, we report a VOFET with an on/off ratio up to 10(5) as well as output current saturation by fabricating a transparent gate capacitor consisting of a perforated indium tin oxide (ITO) source electrode, HfO2 gate dielectric, and ITO gate electrode. Effects of the pore size and the pore depth within the porous ITO electrodes on the on/off characteristic of a VOFET are systematically explained in this work. By combining a phosphorescent organic light-emitting diode with an optimized VOFET structure, a vertical organic light-emitting transistor with a luminance on/off ratio of 10(4) can be fabricated.

  18. Low-cost packaging of high-performance optoelectronic components

    SciTech Connect

    Lowry, M.; Lu, Shin-Yee; Pocha, M.; Strand, O.T.

    1994-08-01

    Optoelectronic component costs are often dominated by the costs of attaching fiber optic pigtails--especially for the case of single transverse mode devices. We present early results of our program in low-cost packaging. We are employing machine-vision controlled automated positioning and silicon microbench technology to reduce the costs of optoelectronic components. Our machine vision approach to automated positioning has already attained a positional accuracy of less than 5 microns in less than 5 minutes; accuracies and times are expected to improve significantly as the development progresses. Complementing the machine vision assembly is our manufacturable approach to silicon microbench technology. We will describe our silicon microbench optoelectronic device packages that incorporate built-in heaters for solder bonding reflow.

  19. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOEpatents

    Shtein, Max; Yang, Fan; Forrest, Stephen R.

    2008-10-14

    A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

  20. Vertical Organic Field-Effect Transistors for Integrated Optoelectronic Applications.

    PubMed

    Yu, Hyeonggeun; Dong, Zhipeng; Guo, Jing; Kim, Doyoung; So, Franky

    2016-04-27

    Direct integration of a vertical organic field-effect transistor (VOFET) and an optoelectronic device offers a single stacked, low power optoelectronic VOFET with high aperture ratios. However, a functional optoelectronic VOFET could not be realized because of the difficulty in fabricating transparent source and gate electrodes. Here, we report a VOFET with an on/off ratio up to 10(5) as well as output current saturation by fabricating a transparent gate capacitor consisting of a perforated indium tin oxide (ITO) source electrode, HfO2 gate dielectric, and ITO gate electrode. Effects of the pore size and the pore depth within the porous ITO electrodes on the on/off characteristic of a VOFET are systematically explained in this work. By combining a phosphorescent organic light-emitting diode with an optimized VOFET structure, a vertical organic light-emitting transistor with a luminance on/off ratio of 10(4) can be fabricated. PMID:27082815

  1. Optoelectronic Infrastructure for Radio Frequency and Optical Phased Arrays

    NASA Technical Reports Server (NTRS)

    Cai, Jianhong

    2015-01-01

    Optoelectronic integrated circuits offer radiation-hardened solutions for satellite systems in addition to improved size, weight, power, and bandwidth characteristics. ODIS, Inc., has developed optoelectronic integrated circuit technology for sensing and data transfer in phased arrays. The technology applies integrated components (lasers, amplifiers, modulators, detectors, and optical waveguide switches) to a radio frequency (RF) array with true time delay for beamsteering. Optical beamsteering is achieved by controlling the current in a two-dimensional (2D) array. In this project, ODIS integrated key components to produce common RF-optical aperture operation.

  2. Applications of HTSC films in hybrid optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Pavuna, Davor

    1992-03-01

    An overview is given of potential applications of high-Tc superconductors (HTSC) in the context of hybrid optoelectronic technology. The main requirements are described for the in situ growth of epitaxial YBa2Cu3O(7-delta) (YBCO) films on SrTiO3 and discuss the properties of YBCO layers grown on Si and GaAs substrates with intermediate, conducting indium-tin-oxide buffer layers. The performances of the microbridge and the meander type of HTSC bolometer are compared, and several concepts are discussed that may become relevant for future hybrid optoelectronic technology.

  3. Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires.

    PubMed

    Léonard, François; Song, Erdong; Li, Qiming; Swartzentruber, Brian; Martinez, Julio A; Wang, George T

    2015-12-01

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

  4. The Use of Opto-Electronics in Viscometry.

    ERIC Educational Resources Information Center

    Mazza, R. J.; Washbourn, D. H.

    1982-01-01

    Describes a semi-automatic viscometer which incorporates a microprocessor system and uses optoelectronics to detect flow of liquid through the capillary, flow time being displayed on a timer with accuracy of 0.01 second. The system could be made fully automatic with an additional microprocessor circuit and inclusion of a pump. (Author/JN)

  5. Stabilizing an optoelectronic microwave oscillator with photonic filters

    NASA Technical Reports Server (NTRS)

    Strekalov, D.; Aveline, D.; Yu, N.; Thompson, R.; Matsko, A. B.; Maleki, L.

    2003-01-01

    This paper compares methods of active stabilization of an optoelectronic microwave oscillator (OEO) based on insertion of a source of optical group delay into an OEO loop. The performance of an OEO stabilized with either a high- optical cavity or an atomic cell is analyzed. We show that the elements play a role of narrow-band microwave filters improving an OEO stability.

  6. Simultaneous thermoelectric and optoelectronic characterization of individual nanowires

    SciTech Connect

    Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; Martinez, Julio A.; Song, Erdong; Li, Qiming

    2015-11-03

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

  7. Simultaneous thermoelectric and optoelectronic characterization of individual nanowires

    DOE PAGES

    Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; Martinez, Julio A.; Song, Erdong; Li, Qiming

    2015-11-03

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrentmore » observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.« less

  8. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    PubMed

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems. PMID:27043922

  9. Optoelectronic reservoir computing: tackling noise-induced performance degradation.

    PubMed

    Soriano, M C; Ortín, S; Brunner, D; Larger, L; Mirasso, C R; Fischer, I; Pesquera, L

    2013-01-14

    We present improved strategies to perform photonic information processing using an optoelectronic oscillator with delayed feedback. In particular, we study, via numerical simulations and experiments, the influence of a finite signal-to-noise ratio on the computing performance. We illustrate that the performance degradation induced by noise can be compensated for via multi-level pre-processing masks.

  10. Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

    DOEpatents

    Thompson, Mark E.; Li, Jian; Forrest, Stephen; Rand, Barry

    2011-02-22

    An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

  11. Novel optoelectronic RS flipflop based on optically coupled inverters

    NASA Astrophysics Data System (ADS)

    Chino, T.; Matsuda, K.; Adachi, H.; Shibata, J.

    1992-03-01

    An optoelectronic RS flipflop emitting differential output has been proposed and demonstrated. It consists of two optical inverters. Optical interconnections are used to couple these inverters. Stable operation for the variation of bias voltage is demonstrated, which exhibits the possibility for 2-dimensional integration.

  12. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R.

    2013-04-09

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  13. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R.

    2011-02-22

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  14. Magnetometer Based on the Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute

    2005-01-01

    We theoretically propose and discuss properties of two schemes of an all-optical self-oscillating magnetometer based on an opto-electronic oscillator stabilized with an atomic vapor cell. Proof of the principle DC magnetic field measurements characterized with 2 x 10(exp -7) G sensitivity and 1 - 1000 mG dynamic range in one of the schemes are demonstrated.

  15. A coupled optoelectronic oscillator with three resonant cavities

    NASA Astrophysics Data System (ADS)

    Shan, Yuan-yuan; Jiang, Yang; Bai, Guang-fu; Ma, Chuang; Li, Hong-xia; Liang, Jian-hui

    2015-01-01

    A new single-mode optoelectronic oscillator (OEO) with three coupled cavities is proposed and demonstrated. A Fabry-Perot (F-P) cavity fiber laser and an optical-electrical feedback branch are coupled together to construct an optoelectronic oscillator, where the F-P cavity fiber laser serves as a light source, and a modulator is placed in the laser cavity to implement reciprocating modulation, which simultaneously splits the laser cavity into two parts and forms a dual-loop configuration. To complete an optoelectronic oscillator, part of optical signal is output from the F-P cavity to implement the feedback modulation, which constructs the third cavity. Since only the oscillation signal satisfies the requirements of all the three cavities, a single-mode oscillation can be finally achieved. Three resonant cavities are successfully designed without adding more optoelectronic devices, and the side-modes can be well suppressed with low cost. The oscillation condition is theoretically analyzed. In the experimental demonstration, a 20 GHz single longitudinal mode microwave signal is successfully obtained.

  16. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    PubMed

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems.

  17. New generation of high-efficiency optoelectronic devices and systems for transportation: infrastructure equipment

    NASA Astrophysics Data System (ADS)

    Adonin, Alexej S.; Ermakov, Oleg N.

    2002-04-01

    Review is presented for optoelectronic products market present state and global development trends. The steady positive dynamics of optoelectronic products market is noted. Presented economical data reveal the large capacity of optoelectronics market and hard competition between leading manufacturers of optoelectronic products. The clear trend is emphasized for applications range widening of optoelectronic devices and their based systems, this trend being caused by radical progress in new high-efficiency optoelectronic materials synthesis and their based bulk and quantum - confined heterostructures. Different applications of optoelectronic devices and systems in transportation infrastructure are considered. Company R&D program is briefly reviewed, including silicon - on - sapphire (SOS) technology, direct deposition technology of A3 B5 and A2 B6 compounds on Si and sapphire, microporous Si and electroluminescent polymers technologies.

  18. Growing perovskite into polymers for easy-processable optoelectronic devices.

    PubMed

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-12

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH₃NH₃PbI₃ (MAPbI₃) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

  19. Growing perovskite into polymers for easy-processable optoelectronic devices.

    PubMed

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH₃NH₃PbI₃ (MAPbI₃) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition. PMID:25579988

  20. Nucleobase appended viologens: Building blocks for new optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Ciobanu, Marius; Asaftei, Simona

    2015-04-01

    We describe here the fabrication, characterization and possible applications of a new type of optical material - consisting of 4,4‧-bipyridinium core ("viologen") and nucleobases i.e. adenine and/or thymine made by H-bonding. The viologen-nucleobase derivatives were used to construct supramolecular structures in a "biomimetic way" with complementary oligonucleotides (ssDNA) and peptide nucleic acids (ssPNA) as templates. The new nanostructured materials are expected to exhibit enhanced optical and optoelectronic properties with application in the field of supramolecular electronics. Such viologen derivatives could be significant in the design of new 2D and 3D materials with potentially application in optoelectronics, molecular electronics or sensoric.

  1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

    PubMed

    Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras; Coleman, Jonathan N; Strano, Michael S

    2012-11-01

    The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.

  2. Optoelectronic workshops. Part 4: Liquid Crystals for Laser Applications

    NASA Astrophysics Data System (ADS)

    Jacobs, Stephen; Pohlmann, Juergen

    1988-05-01

    This optoelectronic workshop represents the fourth of a series of intensive academic/government interactions in the field of advanced electro-optics as part of the Army sponsored University Research Initiative. The workshops are a collaboration between the Center of Opto-Electronic Systems Research at the University of Rochester, Rochester, New York and the U.S. Army Center for Night Vision and Electro-Optics, Ft. Belvoir, Virginia. By documenting the associated technology status and dialogue it is hoped that this baseline will serve all interested parties towards providing a solution to high priority Army requirements. Responsible for program and program execution are Dr. Nicholas George, University of Rochester (ARO-URI) and Dr. Rudy Buser, NVEOC.

  3. Reconfigurable high-speed optoelectronic interconnect technology for multiprocessor computers

    NASA Astrophysics Data System (ADS)

    Cheng, Julian

    1995-06-01

    We describe a compact optoelectronic switching technology for interconnecting multiple computer processors and shared memory modules together through dynamically reconfigurable optical paths to provide simultaneous, high speed communication amongst different nodes. Each switch provides a optical link to other nodes as well as electrical access to an individual processor, and it can perform optical and optoelectronic switching to covert digital data between various electrical and optical input/output formats. This multifunctional switching technology is based on the monolithic integration of arrays of vertical-cavity surface-emitting lasers with photodetectors and heterojunction bipolar transistors. The various digital switching and routing functions, as well as optically cascaded multistage operation, have been experimentally demonstrated.

  4. Optoelectronic characteristics of single CdS nanobelts

    SciTech Connect

    Li, Q.H.; Gao, T.; Wang, T.H.

    2005-05-09

    Optoelectronic properties of single CdS nanobelts are investigated by performing transport measurements with different laser ON/OFF circles. The current increases linearly with the bias voltage in the dark, and superlinearly under illumination. The superlinear increase can be related to the enhanced mobility due to the partial release of surface adsorbates under illumination. The current jumps up by five orders of magnitude upon turning on the laser with an intensity of 0.3 W/cm{sup 2} within 91 ms and decreases by five orders 6 ms just after turning off the laser. The high sensitivity and fast response in the visible range indicate potential applications of CdS nanobelts in realizing optoelectronic switches.

  5. Development of a dual-axis optoelectronic precision level

    NASA Astrophysics Data System (ADS)

    Fan, Kuang-Chao; Wang, Tsung-Han; Lin, Sheng-Yi; Liu, Yen-Chih

    2011-12-01

    This paper presents the design principle and applications of a innovative dual-axis optoelectronic level. A commercially available DVD pickup head is adopted as the angle sensor in association with the double-layer pendulum mechanism for dual-axis swings. A mass-damping system is analyzed to model the mechanical dynamics. Measured angles of both axes are processed by a microprocessor and displayed on a LCD or exported to an external PC. Compared with a triple-beam laser angular interferometer, the error of the dual-axis optoelectronic level is better than +/-0.5 arc-seconds in the measuring range of +/-20 arc-seconds, and the settling time is within 0.5 sec. Two experimental results show the consistency with a Renishaw interfereometer and its practical use in industry.

  6. Van der Waals stacked 2D layered materials for optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhang, Wenjing; Wang, Qixing; Chen, Yu; Wang, Zhuo; Wee, Andrew T. S.

    2016-06-01

    The band gaps of many atomically thin 2D layered materials such as graphene, black phosphorus, monolayer semiconducting transition metal dichalcogenides and hBN range from 0 to 6 eV. These isolated atomic planes can be reassembled into hybrid heterostructures made layer by layer in a precisely chosen sequence. Thus, the electronic properties of 2D materials can be engineered by van der Waals stacking, and the interlayer coupling can be tuned, which opens up avenues for creating new material systems with rich functionalities and novel physical properties. Early studies suggest that van der Waals stacked 2D materials work exceptionally well, dramatically enriching the optoelectronics applications of 2D materials. Here we review recent progress in van der Waals stacked 2D materials, and discuss their potential applications in optoelectronics.

  7. Optoelectronics with electrically tunable PN diodes in monolayer WSe2

    NASA Astrophysics Data System (ADS)

    Churchill, Hugh; Baugher, Britton; Yang, Yafang; Jarillo-Herrero, Pablo

    2014-03-01

    We describe the transport and optoelectronic behavior of ambipolar monolayer WSe2 devices in which two local gates are used to define a PN junction exclusively within the sheet of WSe2. With these electrically tunable PN junctions, we demonstrate both PN and NP diodes with ideality factors better than 2. Under excitation with light, the diodes show photodetection responsivity of 210 mA/W and photovoltaic power generation with a peak external quantum efficiency of 0.2%, promising numbers for a nearly transparent monolayer sheet in a lateral device geometry. Finally, we demonstrate a light-emitting diode based on monolayer WSe2. These devices provide a fundamental building block for ultra-thin, flexible, and nearly transparent optoelectronic and electronic applications based on ambipolar dichalcogenide materials.

  8. Opto-Electronic Oscillator Using Suppressed Phase Modulation

    NASA Technical Reports Server (NTRS)

    Dick, G. John; Yu, Nan

    2007-01-01

    A proposed opto-electronic oscillator (OEO) would generate a microwave signal having degrees of frequency stability and spectral purity greater than those achieved in prior OEOs. The design of this system provides for reduction of noise levels (including the level of phase noise in the final output microwave signal) to below some of the fundamental limits of the prior OEOs while retaining the advantages of photonic generation of microwaves.

  9. Diffusion of excitons in materials for optoelectronic device applications

    NASA Astrophysics Data System (ADS)

    Singh, Jai; Narayan, Monishka Rita; Ompong, David

    2015-06-01

    The diffusion of singlet excitonsis known to occur through the Förster resonance energy transfer (FRET) mechanism and that of singlet and triplet excitonscan occur through the Dexter carrier transfer mechanism. It is shown here that if a material possesses the strong exciton-spin-orbit-photon interaction then triplet excitonscan also be transported /diffused through a mechanism like FRET. The theory is applicable to the diffusion of excitonsin optoelectronic devices like organic solar cells, organic light emitting devices and inorganic scintillators.

  10. Patterning of conjugated polymers for organic optoelectronic devices.

    PubMed

    Xu, Youyong; Zhang, Fan; Feng, Xinliang

    2011-05-23

    Conjugated polymers have been attracting more and more attention because they possess various novel electrical, magnetical, and optical properties, which render them useful in modern organic optoelectronic devices. Due to their organic nature, conjugated polymers are light-weight and can be fabricated into flexible appliances. Significant research efforts have been devoted to developing new organic materials to make them competitive with their conventional inorganic counterparts. It is foreseeable that when large-scale industrial manufacture of the devices made from organic conjugated polymers is feasible, they would be much cheaper and have more functions. On one hand, in order to improve the performance of organic optoelectronic devices, it is essential to tune their surface morphologies by techniques such as patterning. On the other hand, patterning is the routine requirement for device processing. In this review, the recent progress in the patterning of conjugated polymers for high-performance optoelectronic devices is summarized. Patterning based on the bottom-up and top-down methods are introduced. Emerging new patterning strategies and future trends for conventional patterning techniques are discussed.

  11. Optoelectronic properties of valence-state-controlled amorphous niobium oxide

    NASA Astrophysics Data System (ADS)

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-01

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

  12. Optoelectronics-related competence building in Japanese and Western firms

    NASA Astrophysics Data System (ADS)

    Miyazaki, Kumiko

    1992-05-01

    In this paper, an analysis is made of how different firms in Japan and the West have developed competence related to optoelectronics on the basis of their previous experience and corporate strategies. The sample consists of a set of seven Japanese and four Western firms in the industrial, consumer electronics and materials sectors. Optoelectronics is divided into subfields including optical communications systems, optical fibers, optoelectronic key components, liquid crystal displays, optical disks, and others. The relative strengths and weaknesses of companies in the various subfields are determined using the INSPEC database, from 1976 to 1989. Parallel data are analyzed using OTAF U.S. patent statistics and the two sets of data are compared. The statistical analysis from the database is summarized for firms in each subfield in the form of an intra-firm technology index (IFTI), a new technique introduced to assess the revealed technology advantage of firms. The quantitative evaluation is complemented by results from intensive interviews with the management and scientists of the firms involved. The findings show that there is a marked variation in the way firms' technological trajectories have evolved giving rise to strength in some and weakness in other subfields for the different companies, which are related to their accumulated core competencies, previous core business activities, organizational, marketing, and competitive factors.

  13. Microwave and millimeter-wave losses in conventional optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Mortazy, Ebrahim; Wu, Ke

    2011-06-01

    In this paper, microwave characteristics of conventional optoelectronic devices, with emphasis on devices with microstrip (MS) and coplanar waveguide (CPW) electrode structures, are obtained. This analysis is essential for any improvement in the structure of the conventional optoelectronic devices so as to obtain a high performance. Microwave loss is one of the important bandwidth limitation factors in microwave and millimeter-wave (mmW) optical devices. Different sources of loss including ohmic, dielectric and radiating loss in MS and CPW of conventional optical devices are analyzed and compared. The results show that the total microwave loss increases with frequency in conventional MS and CPW waveguides. Also, in traveling-wave optoelectronic devices, the bandwidth is limited in the optical part by effects such as the carrier transit time effect and in the microwave part by factors such as length of the devices in active and non-active sections. In addition, validation of the results in the paper is performed with published theoretical and/or measurement results.

  14. Web-Enabled Optoelectronic Particle-Fallout Monitor

    NASA Technical Reports Server (NTRS)

    Lineberger, Lewis P.

    2008-01-01

    A Web-enabled optoelectronic particle- fallout monitor has been developed as a prototype of future such instruments that (l) would be installed in multiple locations for which assurance of cleanliness is required and (2) could be interrogated and controlled in nearly real time by multiple remote users. Like prior particle-fallout monitors, this instrument provides a measure of particles that accumulate on a surface as an indication of the quantity of airborne particulate contaminants. The design of this instrument reflects requirements to: Reduce the cost and complexity of its optoelectronic sensory subsystem relative to those of prior optoelectronic particle fallout monitors while maintaining or improving capabilities; Use existing network and office computers for distributed display and control; Derive electric power for the instrument from a computer network, a wall outlet, or a battery; Provide for Web-based retrieval and analysis of measurement data and of a file containing such ancillary data as a log of command attempts at remote units; and Use the User Datagram Protocol (UDP) for maximum performance and minimal network overhead.

  15. Optimization design of the precision optoelectronic tracking turntable frame

    NASA Astrophysics Data System (ADS)

    Li, Jie

    2010-10-01

    Opto-electric scouting & tracking device is used to scouting the object of hemisphere airspace and tracing of movement tail of object in real time. The precision turntable was important parts of scouting device and it was crucial to the scouting device's technology guideline, such as tracking precision, scouting range, volume and quality etc. To achieving the purpose which scouting & tracking device's volume smallness, quality light, rigid bigness and precision highness characteristics, the mechanical structure of turntable was designed in this paper. Then, the static and dynamic analysis of the precision turntable frame was done using the finite element method. The static analysis results show the intensity and rigid requirement of tracking turntable frame was satisfied, and it had big space to reducing. So the structure optimization design can be done to reduce the frame's volume and moment of inertia. The optimization design of turntable frame was done based on the establishing the optimizing mathematics model. The objective function of optimization was minimizing frame volume. The optimizing result indicated the optimizing effect was distinct. The volume of precision opto-electronic tracking turntable frame reduced 15%. The intensity and rigid of precision opto-electronic tracking turntable frame were verified after optimization, the results was satisfied to the design requirement. It provided important reference to improving the Opto-electronic scouting and tracking device.

  16. Optoelectronic properties of valence-state-controlled amorphous niobium oxide.

    PubMed

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-29

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications. PMID:27168317

  17. Method And Apparatus For Coupling Optical Elements To Optoelectronic Devices For Manufacturing Optical Transceiver Modules

    SciTech Connect

    Anderson, Gene R.; Armendariz, Marcelino G.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; Giunta, Rachel Knudsen; Mitchell, Robert T.; McCormick, Frederick B.; Peterson, David W.; Rising, Merideth A.; Reber, Cathleen A.; Reysen, Bill H.

    2005-06-14

    A process is provided for aligning and connecting at least one optical fiber to at least one optoelectronic device so as to couple light between at least one optical fiber and at least one optoelectronic device. One embodiment of this process comprises the following steps: (1) holding at least one optical element close to at least one optoelectronic device, at least one optical element having at least a first end; (2) aligning at least one optical element with at least one optoelectronic device; (3) depositing a first non-opaque material on a first end of at least one optoelectronic device; and (4) bringing the first end of at least one optical element proximate to the first end of at least one optoelectronic device in such a manner that the first non-opaque material contacts the first end of at least one optoelectronic device and the first end of at least one optical element. The optical element may be an optical fiber, and the optoelectronic device may be a vertical cavity surface emitting laser. The first non-opaque material may be a UV optical adhesive that provides an optical path and mechanical stability. In another embodiment of the alignment process, the first end of at least one optical element is brought proximate to the first end of at least one optoelectronic device in such a manner that an interstitial space exists between the first end of at least one optoelectronic device and the first end of at least one optical element.

  18. Grain-size considerations for optoelectronic multistage interconnection networks.

    PubMed

    Krishnamoorthy, A V; Marchand, P J; Kiamilev, F E; Esener, S C

    1992-09-10

    This paper investigates, at the system level, the performance-cost trade-off between optical and electronic interconnects in an optoelectronic interconnection network. The specific system considered is a packet-switched, free-space optoelectronic shuffle-exchange multistage interconnection network (MIN). System bandwidth is used as the performance measure, while system area, system power, and system volume constitute the cost measures. A detailed design and analysis of a two-dimensional (2-D) optoelectronic shuffle-exchange routing network with variable grain size K is presented. The architecture permits the conventional 2 x 2 switches or grains to be generalized to larger K x K grain sizes by replacing optical interconnects with electronic wires without affecting the functionality of the system. Thus the system consists of log(k) N optoelectronic stages interconnected with free-space K-shuffles. When K = N, the MIN consists of a single electronic stage with optical input-output. The system design use an effi ient 2-D VLSI layout and a single diffractive optical element between stages to provide the 2-D K-shuffle interconnection. Results indicate that there is an optimum range of grain sizes that provides the best performance per cost. For the specific VLSI/GaAs multiple quantum well technology and system architecture considered, grain sizes larger than 256 x 256 result in a reduced performance, while grain sizes smaller than 16 x 16 have a high cost. For a network with 4096 channels, the useful range of grain sizes corresponds to approximately 250-400 electronic transistors per optical input-output channel. The effect of varying certain technology parameters such as the number of hologram phase levels, the modulator driving voltage, the minimum detectable power, and VLSI minimum feature size on the optimum grain-size system is studied. For instance, results show that using four phase levels for the interconnection hologram is a good compromise for the cost

  19. Single-sided lateral-field and phototransistor-based optoelectronic tweezers

    NASA Technical Reports Server (NTRS)

    Ohta, Aaron (Inventor); Chiou, Pei-Yu (Inventor); Hsu, Hsan-Yin (Inventor); Jamshidi, Arash (Inventor); Wu, Ming-Chiang (Inventor); Neale, Steven L. (Inventor)

    2011-01-01

    Described herein are single-sided lateral-field optoelectronic tweezers (LOET) devices which use photosensitive electrode arrays to create optically-induced dielectrophoretic forces in an electric field that is parallel to the plane of the device. In addition, phototransistor-based optoelectronic tweezers (PhOET) devices are described that allow for optoelectronic tweezers (OET) operation in high-conductivity physiological buffer and cell culture media.

  20. Blends of conjugated rigid-rod polymers: Novel supramolecular materials for electronics, optoelectronics and photonics

    SciTech Connect

    Jenekhe, S.A.

    1996-12-31

    Selected examples of binary blends of conjugated polymers will be presented to illustrate the vast scope of their supramolecular structures and electronic, optical, nonlinear optical, and optoelectronic properties.

  1. Optoelectronic sensor device for monitoring ethanol concentration in winemaking applications

    NASA Astrophysics Data System (ADS)

    Jiménez-Márquez, F.; Vázquez, J.; Úbeda, J.; Rodríguez-Rey, J.; Sánchez-Rojas, J. L.

    2015-05-01

    The supervision of key variables such as sugar, alcohol, released CO2 and microbiological evolution in fermenting grape must is of great importance in the winemaking industry. However, the fermentation kinetics is assessed by monitoring the evolution of the density as it varies during a fermentation, since density is an indicator of the total amount of sugars, ethanol and glycerol. Even so, supervising the fermentation process is an awkward and non-comprehensive task, especially in wine cellars where production rates are massive, and enologists usually measure the density of the extracted samples from each fermentation tank manually twice a day. This work aims at the design of a fast, low-cost, portable and reliable optoelectronic sensor for measuring ethanol concentration in fermenting grape must samples. Different sets of model solutions, which contain ethanol, fructose, glucose, glycerol dissolved in water and emulate the grape must composition at different stages of the fermentation, were prepared both for calibration and validation. The absorption characteristics of these model solutions were analyzed by a commercial spectrophotometer in the NIR region, in order to identify key wavelengths from which valuable information regarding the sample composition can be extracted. Finally, a customized optoelectronic prototype based on absorbance measurements at two wavelengths belonging to the NIR region was designed, fabricated and successfully tested. The system, whose optoelectronics is reduced after a thorough analysis to only two LED lamps and their corresponding paired photodiodes operating at 1.2 and 1.3 μm respectively, calculates the ethanol content by a multiple linear regression.

  2. Graduate studies on optoelectronics in Argentina: an experience

    NASA Astrophysics Data System (ADS)

    Fernández, Juan C.; Garea, María. T.; Isaurralde, Silvia; Perez, Liliana I.; Raffo, Carlos A.

    2014-07-01

    The number of graduate programs in Optoelectronics in Argentina is scarce. The current Optics and Photonics Education Directory lists only three programs. One of them was launched in 2001 in the Facultad de Ingeniería (College of Engineering), Universidad de Buenos Aires (UBA). This was the first graduate program in the field, leading to a Master Degree in Optoelectronics. This decision arose from the demand of telecommunications industries and several estate- or private-funded research institutions working with us in the fields of lasers, optics, remote sensing, etc. A great bonus was the steady work, during several decades, of research groups in the College on the development of different type of lasers and optical non destructive tests and their engineering applications. As happened in many engineering graduate programs in Argentina at that time, few non full-time students could finish their studies, which called for 800 hours of traditional lecture-recitation classes, and the Master Thesis. In recent years Argentine Education authorities downsized the Master programs to 700 hours of blended learning and we redesigned the Graduate Optoelectronic Engineering Program to meet the challenge, dividing it in two successive one year programs, the first aimed at a professional training for almost immediate insertion in the labor market (called Especialización en Ingeniería Optoelectrónica), and the second (called Maestría en Ingeniería Optoelectrónica y Fotónica) aimed at a more academic and research target to comply with the UBA standards for Master degrees. The present work is a presentation of the new program design, which has begun in the current year.

  3. Two-dimensional crystals: managing light for optoelectronics.

    PubMed

    Eda, Goki; Maier, Stefan A

    2013-07-23

    Semiconducting two-dimensional (2D) crystals such as MoS2 and WSe2 exhibit unusual optical properties that can be exploited for novel optoelectronics ranging from flexible photovoltaic cells to harmonic generation and electro-optical modulation devices. Rapid progress of the field, particularly in the growth area, is beginning to enable ways to implement 2D crystals into devices with tailored functionalities. For practical device performance, a key challenge is to maximize light-matter interactions in the material, which is inherently weak due to its atomically thin nature. Light management around the 2D layers with the use of plasmonic nanostructures can provide a compelling solution.

  4. Quantum dot rolled-up microtube optoelectronic integrated circuit.

    PubMed

    Bhowmick, Sishir; Frost, Thomas; Bhattacharya, Pallab

    2013-05-15

    A rolled-up microtube optoelectronic integrated circuit operating as a phototransceiver is demonstrated. The microtube is made of a InGaAs/GaAs strained bilayer with InAs self-organized quantum dots inserted in the GaAs layer. The phototransceiver consists of an optically pumped microtube laser and a microtube photoconductive detector connected by an a-Si/SiO2 waveguide. The loss in the waveguide and responsivity of the entire phototransceiver circuit are 7.96 dB/cm and 34 mA/W, respectively.

  5. Neuromorphic opto-electronic integrated circuits for optical signal processing

    NASA Astrophysics Data System (ADS)

    Romeira, B.; Javaloyes, J.; Balle, S.; Piro, O.; Avó, R.; Figueiredo, J. M. L.

    2014-08-01

    The ability to produce narrow optical pulses has been extensively investigated in laser systems with promising applications in photonics such as clock recovery, pulse reshaping, and recently in photonics artificial neural networks using spiking signal processing. Here, we investigate a neuromorphic opto-electronic integrated circuit (NOEIC) comprising a semiconductor laser driven by a resonant tunneling diode (RTD) photo-detector operating at telecommunication (1550 nm) wavelengths capable of excitable spiking signal generation in response to optical and electrical control signals. The RTD-NOEIC mimics biologically inspired neuronal phenomena and possesses high-speed response and potential for monolithic integration for optical signal processing applications.

  6. Optoelectronic System for Measuring Heights Above a Floor

    NASA Technical Reports Server (NTRS)

    Youngquist, Robert C.; Davis, Chris; Polk, Jimmy; Burns, Brad; Haskell, William; Opalka, Tim; McClure, Michael

    2003-01-01

    An optoelectronic system has been developed for measuring heights, above a floor, of designated points on a large object. In the original application for which the system was conceived, the large object is a space shuttle and the designated points are two front and two rear points for the attachment of jacks for positioning the shuttle at the height and horizontal pitch specified for maintenance operations. The front and rear jacking points are required to be raised to heights of 198 1/4 in. (502.9 0.6 cm) and 120.6 1/4 in. (306.4 0.6 cm), respectively.

  7. Optoelectronic set for measuring reflectance spectrum of living human skin

    NASA Astrophysics Data System (ADS)

    Gryko, Lukasz; Zajac, Andrzej; Gilewski, Marian; Kulesza, Ewa

    2015-09-01

    In the paper the authors present the developed optoelectronic set for measuring spectral reflectance of living human skin. The basic elements of the set are: the illuminator consists of the LED illuminator emitting a uniform distribution of spectral irradiance in the exposed field, the semispherical measuring chamber and the spectrometer which measures spectrum of reflected radiation. Measured radiation is from spectral range of tissue optical window (from 600 nm to 1000 nm). Knowledge about the reflectance spectrum of the patient skin allows adjusting spectral and energetic parameters of the radiation used in biostimulation treatment. The developed set also enables the repeatable exposures of patients in the Low Level Laser Therapy procedures.

  8. Conjugated polymers and their use in optoelectronic devices

    DOEpatents

    Marks, Tobin J.; Guo, Xugang; Zhou, Nanjia; Chang, Robert P. H.; Drees, Martin; Facchetti, Antonio

    2016-10-18

    The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.

  9. Isochronal chaos synchronization of delay-coupled optoelectronic oscillators.

    PubMed

    Illing, Lucas; Panda, Cristian D; Shareshian, Lauren

    2011-07-01

    We study experimentally chaos synchronization of nonlinear optoelectronic oscillators with time-delayed mutual coupling and self-feedback. Coupling three oscillators in a chain, we find that the outer two oscillators always synchronize. In contrast, isochronal synchronization of the mediating middle oscillator is found only when self-feedback is added to the middle oscillator. We show how the stability of the isochronal solution of any network, including the case of three coupled oscillators, can be determined by measuring the synchronization threshold of two unidirectionally coupled systems. In addition, we provide a sufficient condition that guarantees global asymptotic stability of the synchronized solution.

  10. MEMS oscillating squeeze-film pressure sensor with optoelectronic feedback

    NASA Astrophysics Data System (ADS)

    Kumar, Lalit; Reimann, Klaus; Goossens, Martijn J.; Besling, Willem F. A.; Dolleman, Robin J.; Pijnenburg, Remco H. W.; van der Avoort, Cas; Sarro, Lina P. M.; Steeneken, Peter G.

    2015-04-01

    This work reports on an oscillating pressure sensor that converts pressure into frequency using the squeeze-film effect. A new aspect is the laser Doppler vibrometer (LDV) in the optoelectronic feedback loop that is used to bring the sensor element into sustained mechanical oscillation. A phase shifter and automatic gain control circuit stabilize the oscillation. The frequency stability of the pressure sensor is investigated by measuring its Allan deviation and is compared to the performance of a quartz oscillating pressure sensor. Finally, the pressure resolution of this oscillating sensor is compared to conventional pressure sensors.

  11. Integration of InP-based optoelectronics with silicon waveguides

    NASA Astrophysics Data System (ADS)

    Aalto, Timo; Harjanne, Mikko; Kapulainen, Markku; Ylinen, Sami; Ollila, Jyrki; Vilokkinen, Ville; Mörl, Ludwig; Möhrle, Martin; Hamelin, Régis

    2009-02-01

    Compound semiconductors provide state-of-the-art performance in optoelectronics, while silicon-on-insulator (SOI) is an ideal platform for many passive functions in integrated optics. By combining them one can realise optical devices with high performance and low cost. This paper discusses the various applications and technologies for integrating InP chips with SOI waveguides. Bonding of lasers, SOA arrays and detectors for practical applications is described. Experimental results are given for visually aligned thermo-compression bonding and self-aligned flip-chip bonding with Indium bumps. Flip-chip bonding is reported directly on SOI chips, as well as on a separate silicon-optical-bench.

  12. All-optoelectronic continuous-wave terahertz systems.

    PubMed

    Löffler, Torsten; Siebert, Karsten J; Quast, Holger; Hasegawa, Noburu; Loata, Gabriel; Wipf, Robert; Hahn, Tobias; Thomson, Mark; Leonhardt, Rainer; Roskos, Hartmut G

    2004-02-15

    We discuss the optoelectronic generation and detection of continuous-wave terahertz (THz) radiation by the mixing of visible/near-infrared laser radiation in photoconductive antennas. We review attempts to reach higher THz output-power levels by reverting from mobility-lifetime-limited photomixers to transit-time-limited p-i-n photodiodes. We then describe our implementation of a THz spectroscopy and imaging-measurement system and demonstrate its imaging performance with several examples. Possible application areas of THz imaging in the biomedical field and in surface characterization for industrial purposes are explored. PMID:15306519

  13. Comparison of two methods of laser stabilization for optoelectronic oscillators

    NASA Astrophysics Data System (ADS)

    Salzenstein, Patrice; Saleh, Khaldoun; Zarubin, Mikhail; Trushin, Arseniy S.

    2014-05-01

    In order to stabilize the signal delivered by an optoelectronic oscillator (OEO) [1-5], it is necessary to lock the signal of the laser on the resonance. The laser wavelength must be stabilized onto one of the resonator's resonances to be able to maintain a stable performance of the oscillator. We first present the Pound Drever hall method that has been used to realize this setup. As an alternative method, we have also investigate another technique based on the use of acousto-optic cells (AOC). It is presented on part 3 of this paper.

  14. Optoelectronic signal processing using finite impulse response neural networks

    NASA Astrophysics Data System (ADS)

    H. B. Xavier da Silveira, Paulo Eduardo

    2001-08-01

    This thesis investigates the use of finite impulse response neural network as the computational algorithm for efficient optoelectronic signal processing. The study begins with the analysis and development of different suitable algorithms, followed by the optoelectronic design of single-layer and multi-layer architectures, and it is concluded with the presentation of the results of a successful experimental implementation. First, finite impulse response adaptive filters and neural networks-the algorithmic building blocks-are introduced, followed by a description of finite impulse response neural networks. This introduction is followed by a historical background, describing early optoelectronic implementations of these algorithms. Next, different algorithms capable of temporal back-propagation are derived in detail, including a novel modification to the conventional algorithm, called delayed-feedback back- propagation. Based on these algorithms, different optoelectronic processors making use of adaptive volume holograms and three-dimensional optical processing are developed. Two single-layer architectures are presented: the input delay plane architecture and the output delay plane architecture. By combining them it is possible to implement both forward and backward propagation in two complementary multi-layer architectures: the first making use of the conventional temporal back-propagation and the second making use of delayed feedback back-propagation. Next, emphasis is given to a specific application: the processing of signals from adaptive antenna arrays. This research is initiated by computer simulations of different scenarios with multiple broadband signals and jammers, in planar and circular arrays, studying issues such as the effect of modulator non-linearities to the performance of the array, and the relation between the number of jammers and the final nulling depth. Two sets of simulations are presented: the first set applied to RF antenna arrays and the

  15. Optoelectronic complex for separation of moving small size mineral objects

    NASA Astrophysics Data System (ADS)

    Chertov, Aleksandr N.; Gorbunova, Elena V.; Korotaev, Valery V.; Pavlenko, Nikita A.

    2014-05-01

    For today the mineral resources of our planet, especially mineral raw deposits are depleted continuously. Therefore the traditional technologies of extraction and enrichment of mineral raw materials are often unable to provide the profitability of development of mentioned mineral deposits. Thus, the mining industry needs in improving of the existing systems for mineral raw materials separation. The well-known optical sorting method is the most promising in terms of improving of structure and characteristics of devices that realize this method. There are a lot of types of color sorters, but they have a number of shortcomings relating to both schemes of lighting and registration of mineral objects as well as used algorithms of images processing. Often color sorters are unable to divide low-contrast small size mineral objects. This problem can be solved by using of optoelectronic complex for separation of moving small size mineral objects developed by the employees of the chair of optical-electronic devices and systems of University ITMO in Russia. The paper presents the description of structure organization and operating principles of proposed experimental model of optoelectronic complex for separation of moving small size mineral objects.

  16. Growing perovskite into polymers for easy-processable optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

  17. Growing perovskite into polymers for easy-processable optoelectronic devices

    PubMed Central

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition. PMID:25579988

  18. Nanoengineered quantum dot medium for space optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Oktyabrsky, S.; Tokranov, V.; Yakimov, M.; Sergeev, A.; Mitin, V.

    2012-10-01

    Resistance to temperature and ionizing radiation of space optoelectronic devices can be improved through control of carrier kinetics in nanoscale systems. Recent results in the science and technology of self-assembled heteroepitaxial InAs quantum dot (QD) medium related to photonic applications are discussed. Focus is placed on management of carrier kinetics via nanoengineering of electronic spectrum and potential profiles in the QD ensemble using modeling and controlled fabrication of QDs with molecular beam epitaxy. Shape-engineered QD sheets embedded into GaAs quantum wells were found to withstand two orders of magnitude higher proton dose than QWs and to account for high luminescence efficiency and thermally stable laser diodes. Built-in charge in QDs is responsible for improvement of both near and mid-IR optical absorption, but also control photoelectron lifetime in the structures. The negatively charged QD medium was the first QD material that has recently shown credible improvement of solar cell efficiency. It has resulted from IR energy harvesting and suppressed fast electron capture processes. It is thus expected that QD InAs/GaAs photovoltaics will overcome the efficiency and lifespan of multi-junction solar cells. Potentials due to QD built-in charge are also responsible for improved photoelectron lifetime in QD infrared photodetectors. QD correlated clusters provide even higher collective potential barriers around clusters and constitute the novel approach to the optoelectronic materials combining manageable photoelectron lifetime, high mobility, and tunable localized and conducting states.

  19. All-organic optoelectronic sensor for pulse oximetry

    NASA Astrophysics Data System (ADS)

    Lochner, Claire M.; Khan, Yasser; Pierre, Adrien; Arias, Ana C.

    2014-12-01

    Pulse oximetry is a ubiquitous non-invasive medical sensing method for measuring pulse rate and arterial blood oxygenation. Conventional pulse oximeters use expensive optoelectronic components that restrict sensing locations to finger tips or ear lobes due to their rigid form and area-scaling complexity. In this work, we report a pulse oximeter sensor based on organic materials, which are compatible with flexible substrates. Green (532 nm) and red (626 nm) organic light-emitting diodes (OLEDs) are used with an organic photodiode (OPD) sensitive at the aforementioned wavelengths. The sensor’s active layers are deposited from solution-processed materials via spin-coating and printing techniques. The all-organic optoelectronic oximeter sensor is interfaced with conventional electronics at 1 kHz and the acquired pulse rate and oxygenation are calibrated and compared with a commercially available oximeter. The organic sensor accurately measures pulse rate and oxygenation with errors of 1% and 2%, respectively.

  20. Laser hyperdoping silicon for enhanced infrared optoelectronic properties

    NASA Astrophysics Data System (ADS)

    Warrender, Jeffrey M.

    2016-09-01

    Pulsed laser melting and rapid solidification have attracted interest for decades as a method to achieve impurity concentrations in silicon orders of magnitude above the equilibrium solubility limit. The incorporation of sulfur into silicon using this technique led to the observation of strong broadband infrared absorption in the resulting material. This observation, combined with interest in impurity band optoelectronic device concepts, has resulted in renewed interest in laser techniques for achieving high impurity concentrations. In this paper, I review the literature that led to the present understanding of laser hyperdoping and provide a summary of the optical and optoelectronic measurements made on sulfur hyperdoped silicon to date. I mention recent work exploring transition metal impurities and discuss how considerations discovered in early solidification and later rapid solidification work inform our approaches to kinetically trapping such impurities. I also provide a simplified picture of how a laser hyperdoping process is typically carried out, as an entry point for an experimentalist seeking to fabricate such layers.

  1. A novel dual-axis optoelectronic level with refraction principle

    NASA Astrophysics Data System (ADS)

    Torng, Jingsyan; Wang, Chih-Hsiung; Huang, Zih-Nan; Fan, Kuang-Chao

    2013-03-01

    Levels are fundamental metrological tools for machine leveling and angle measurements. Current levels are all based on the pendulum principle and bubble vial principle. The former is precise but complicated, while the latter is not precise enough. This paper presents a novel, simple and precise optoelectronic level. It is based on the principle of light refraction in the transparent and viscous fluid. The fluid surface is always in leveling condition regardless whether the ground is level or not. Measuring the refraction angle with precise dual-axis autocollimator can directly reflect the inclined angle of the level. A leakage prevention design is also proposed to allow the level to be placed in any pose. Calibrated by an angular interferometer, the error of the dual-axis optoelectronic level is better than ±0.7 arcsec in the measuring range of ±100 arcsec, and better than ±0.4 arcsec for the range of ±30 arcsec, for both axes. Without the need of a pendulum mechanism, this is a simpler design for precision level.

  2. Optoelectronic measures in the analysis of running target shooting.

    PubMed

    Mononen, K; Viitasalo, J T; Era, P; Konttinen, N

    2003-06-01

    In this study, we examined the construct validity and practical significance of an optoelectronic shooting training system (Noptel ST 2000 Sport) for the technical analysis of running target shooting. A total of 37 male shooters of three different skill levels participated in the study. Principal component analysis revealed four common factors of 16 variables describing the aiming trajectory of the rifle barrel: (i) Holding area, (ii) Accuracy of aiming, (iii) Cleanness of triggering and (iv) Time on target. These factors were suggested to describe the essential components of running target shooting. According to the discriminant analysis, the shooters of various skill levels seemed to discriminate successfully into three groups when the aiming trajectory data were analysed. Finally, the aiming trajectory variables represented a 43% of the total variance in the shooting score. In summary, the present data indicated that the optoelectronic shooting training system had practical significance and supported the technical analysis of rifle barrel movement in running target shooting. A sub-set of variables, which reflect the essential information of running target shooting performance, were outlined for training and coaching purposes.

  3. Impact of optical antennas on active optoelectronic devices.

    PubMed

    Bonakdar, Alireza; Mohseni, Hooman

    2014-10-01

    Remarkable progress has been made in the fabrication and characterization of optical antennas that are integrated with optoelectronic devices. Herein, we describe the fundamental reasons for and experimental evidence of the dramatic improvements that can be achieved by enhancing the light-matter interaction via an optical antenna in both photon-emitting and -detecting devices. In addition, integration of optical antennas with optoelectronic devices can lead to the realization of highly compact multifunctional platforms for future integrated photonics, such as low-cost lab-on-chip systems. In this review paper, we further focus on the effect of optical antennas on the detectivity of infrared photodetectors. One particular finding is that the antenna can have a dual effect on the specific detectivity, while it can elevate light absorption efficiency of sub-wavelength detectors, it can potentially increase the noise of the detectors due to the enhanced spontaneous emission rate. In particular, we predict that the detectivity of interband photon detectors can be negatively affected by the presence of optical antennas across a wide wavelength region covering visible to long wavelength infrared bands. In contrast, the detectivity of intersubband detectors could be generally improved with a properly designed optical antenna.

  4. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOEpatents

    Shtein, Max; Yang, Fan; Forrest, Stephen R.

    2008-09-02

    A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.

  5. Prediction of Silicon-Based Layered Structures for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Luo, Wei; Ma, Yanming; Gong, Xingao; Xiang, Hongjun; CCMG Team

    2015-03-01

    A method based on the particle swarm optimization (PSO) algorithm is presented to design quasi-two-dimensional (Q2D) materials. With this development, various single-layer and bi-layer materials in C, Si, Ge, Sn, and Pb were predicted. A new Si bi-layer structure is found to have a much-favored energy than the previously widely accepted configuration. Both single-layer and bi-layer Si materials have small band gaps, limiting their usages in optoelectronic applications. Hydrogenation has therefore been used to tune the electronic and optical properties of Si layers. We discover two hydrogenated materials of layered Si8H2andSi6H2 possessing quasi-direct band gaps of 0.75 eV and 1.59 eV, respectively. Their potential applications for light emitting diode and photovoltaics are proposed and discussed. Our study opened up the possibility of hydrogenated Si layered materials as next-generation optoelectronic devices.

  6. Analog-digital models of stream-aquifer systems

    USGS Publications Warehouse

    Moulder, E.A.; Jenkins, C.T.

    1969-01-01

    The best features of analog and digital computers were combined to make a management model of a stream-aquifer system. The analog model provides a means for synthesizing, verifying, and summarizing aquifer properties; the digital model permits rapid calculation of the effects of water management practices. Given specific management alternatives, a digital program can be written that will optimize operation plans of stream-aquifer systems. The techniques are demonstrated by application to a study of the Arkansas River valley in southeastern Colorado.

  7. Larger bases and mixed analog/digital neural nets

    SciTech Connect

    Beiu, V.

    1998-12-31

    The paper overviews results dealing with the approximation capabilities of neural networks, and bounds on the size of threshold gate circuits. Based on an explicit numerical algorithm for Kolmogorov`s superpositions the authors show that minimum size neural networks--for implementing any Boolean function--have the identity function as the activation function. Conclusions and several comments on the required precision are ending the paper.

  8. a 9-BIT, Pipelined Gallium Arsenide Analog-Digital Converter

    NASA Astrophysics Data System (ADS)

    Breevoort, Cornelius Marius

    1992-01-01

    Excellent Short Take-Off and Landing (STOL) performance is achieved by Upper Surface Blowing (USB) aircraft as a result of mounting high by-pass turbofan engines over the forward part of the wing. High lift levels are generated by directing the engine exhaust over the wing upper surface to entrain additional airflow and by using the Coanda effect to turn the exhaust flow downward over a large radius "Coanda" flap. Commercial application of USB technology could reduce airport congestion and community noise if future configurations can be designed with economically acceptable cruise drag levels. An experimental investigation of the high speed aerodynamics of USB aircraft configurations has been conducted to accurately define the magnitude and causes of the powered configuration cruise drag. A highly instrumented wind tunnel model of a realistic USB configuration has been used which permitted parametric variations in the number and spanwise location of the nacelles and accurately modeled the engine power effects with turbofan propulsion simulators. The measured force data provides an accurate definition of the cruise drag penalty associated with each configuration and the constructed pressure contour plots provide detailed insight into their causes. It was found that the high speed aerodynamics of USB configurations is a complex interaction of jet induced and wing transonic flowfields. The presence of the nacelles on the wing upper surface created a severe drag penalty which increased with freestream Mach number, power setting and angle of attack. The more widely spaced two nacelle configurations exhibited improved flowfields at moderate Mach numbers but suffered from drag levels comparable to the baseline configuration for high speed cruise conditions. At high Mach numbers and power settings, all of the tested configurations displayed strong shocks and separated zones in the wing/nacelle junction regions. Detailed discussions of the causes of the cruise drag penalty and recommended future design improvements are presented.

  9. Optoelectronic method for detection of cervical intraepithelial neoplasia and cervical cancer

    NASA Astrophysics Data System (ADS)

    Pruski, D.; Przybylski, M.; Kędzia, W.; Kędzia, H.; Jagielska-Pruska, J.; Spaczyński, M.

    2011-12-01

    The optoelectronic method is one of the most promising concepts of biophysical program of the diagnostics of CIN and cervical cancer. Objectives of the work are evaluation of sensitivity and specificity of the optoelectronic method in the detection of CIN and cervical cancer. The paper shows correlation between the pNOR number and sensitivity/specificity of the optoelectronic method. The study included 293 patients with abnormal cervical cytology result and the following examinations: examination with the use of the optoelectronic method — Truscreen, colposcopic examination, and histopathologic biopsy. Specificity of the optoelectronic method for LGSIL was estimated at 65.70%, for HGSIL and squamous cell carcinoma of cervix amounted to 90.38%. Specificity of the optoelectronic method used to confirm lack of cervical pathology was estimated at 78.89%. The field under the ROC curve for the optoelectronic method was estimated at 0.88 (95% CI, 0.84-0.92) which shows high diagnostic value of the test in the detection of HGSIL and squamous cell carcinoma. The optoelectronic method is characterised by high usefulness in the detection of CIN, present in the squamous epithelium and squamous cell carcinoma of cervix.

  10. Integrated optoelectronics for communication and processing; Proceedings of the Meeting, Boston, MA, Sept. 3, 4, 1991

    NASA Astrophysics Data System (ADS)

    Hong, C.-S.

    The present volume on integrated optoelectronics and processing discusses backplane interconnects, transmitters, array technology, receivers, modulators, and lasers. Attention is given to fiber-optic technologies for aircraft applications, packet switch networks, hybrid packaging of surface-emitting microlaser arrays on planar optical systems, and techniques for the implementation of high-speed free-space optical interconnections. Topics addressed include the development of efficient monolithic surface-emitting laser diode arrays, hybrid optoelectronic integration of transmitter arrays on a silicon waferboard, a four-channel hybrid receiver using a silicon substrate for packaging, and novel processing techniques for optoelectronic devices and their integration. Also discussed are processing issues and technologies for optoelectronic integrated circuits and devices, a wideband impedance-matched integrated optoelectronic transmitter, laser packaging for single-mode fiber systems, and an integrated active optical bistable circuit.

  11. Growth and characterization of silicon-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Filios, Adam A.

    Photonics, a blending of optics and electronics, has emerged as one of the world's most rapidly developing fields. Along with microelectronics, they constitute the core technologies of the information industry, and their advances are complementing each other in the tasks of the acquisition, transmission, storage, and processing of increasing amounts of information. Microelectronic device integration has progressed to the point that complete "systems-on-the-chip" have been realized. Photonic materials need to be integrated with standard electronic circuits for the implementation of the next generation optoelectronic "super-chip" where both electrons and photons participate in the transmission and processing of information. Silicon is the cornerstone material in conventional VLSI systems. However, having a relatively small and indirect fundamental energy band-gap, silicon is an inefficient lightemitter. On the other hand, direct integration of III-V photonic materials on a silicon chip is still very problematic. Squeezing light out of silicon itself appears to be an attractive alternative. Light emission from silicon is an important fundamental issue with enormous technological implications. In this work we explore several strategies towards developing silicon based optoelectronic devices. Porous silicon, a material produced by electrochemically etching silicon in aqueous hydrofluoric acid solutions, generated great interest in the early 1990s when it was shown to exhibit relatively bright, room temperature, visible photoluminescence. However, having a poor surface morphology, the material is fragile and chemically unstable leading to degradation of light emission and preventing integration with silicon processing technology. With the development of the epitaxially grown crystalline-Si/O superlattice, we attempt to overcome the morphological problems of porous silicon, retaining its light emission characteristics. Our multilayer c-Si/O device consists of thin silicon

  12. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-01-05

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  13. Optoelectronic switching in diamond and optical surface breakdown

    SciTech Connect

    Lipatov, E I; Tarasenko, V F

    2008-03-31

    The optoelectronic switching in two natural diamond samples of type 2-A is studied at voltages up to 1000 V and the energy density of control 60-ns, 308-nm laser pulses up to 0.6 J cm{sup -2}. It is shown that the design of a diamond switch affects the switching efficiency. When the energy density exceeds 0.2 J cm{sup -2} and the interelectrode surface is completely illuminated, the surface breakdown is initiated by UV radiation, which shunts the current flow through the diamond crystal. When the illumination of the interelectrode surface is excluded, the surface breakdown does not occur. The threshold radiation densities sufficient for initiating the surface breakdown are determined for electric field strengths up to 10 kV cm{sup -1}. (laser applications and other topics in quantum electronics)

  14. EDITORIAL: Focus on Advanced Semiconductor Heterostructures for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Amann, Markus C.; Capasso, Federico; Larsson, Anders; Pessa, Markus

    2009-12-01

    Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures. Focus on Advanced Semiconductor Heterostructures for Optoelectronics Contents Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert and G Tränkle GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, F Guillot, G Pozzovivo, M Tchernycheva, A Lupu, L Vivien, P Crozat, E Warde, C Bougerol, S Schacham, G Strasser, G Bahir, E Monroy and F H Julien Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction/injection stage Maria I Amanti, Giacomo Scalari, Romain Terazzi, Milan Fischer, Mattias Beck, Jérôme Faist, Alok Rudra, Pascal Gallo and Eli Kapon Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Young Joon Hong, Jong-Myeong Jeon, Miyoung

  15. Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

    NASA Technical Reports Server (NTRS)

    Pavlidis, Dimitris

    1991-01-01

    The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

  16. Opto-Electronic Oscillator Stabilized By A Hyperfine Atomic Transition

    NASA Technical Reports Server (NTRS)

    Strekalov, Dmitry; Aveline, David; Matsko, Andrey B.; Thompson, Robert; Yu, Nan

    2004-01-01

    Opto-electronic oscillator (OEO) is a closed-loop system with part of the loop is implemented by an optical beam, and the rest by RF circuitry. The technological advantage of this approach over traditional all-RF loops in the gigahertz range comes from the that frequency filtering can be done far more efficiently in the optical range with compact, low power, and have superior stability. In this work, we report our preliminary results on using the phenomenon of coherent population trapping in (87) Rb vapor as an optical filter. Such a filter allows us to stabilize the OEO at the hyperfine splitting frequency of rubidium, thus implementing a novel type of frequency standard.

  17. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-03-22

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  18. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  19. Advanced Opto-Electronics (LIDAR and Microsensor Development)

    NASA Technical Reports Server (NTRS)

    Vanderbilt, Vern C. (Technical Monitor); Spangler, Lee H.

    2005-01-01

    Our overall intent in this aspect of the project were to establish a collaborative effort between several departments at Montana State University for developing advanced optoelectronic technology for advancing the state-of-the-art in optical remote sensing of the environment. Our particular focus was on development of small systems that can eventually be used in a wide variety of applications that might include ground-, air-, and space deployments, possibly in sensor networks. Specific objectives were to: 1) Build a field-deployable direct-detection lidar system for use in measurements of clouds, aerosols, fish, and vegetation; 2) Develop a breadboard prototype water vapor differential absorption lidar (DIAL) system based on highly stable, tunable diode laser technology developed previously at MSU. We accomplished both primary objectives of this project, in developing a field-deployable direct-detection lidar and a breadboard prototype of a water vapor DIAL system. Paper summarizes each of these accomplishments.

  20. Modifying the Optoelectronic Properties of Rubrene by Strain

    NASA Astrophysics Data System (ADS)

    Sharifzadeh, Sahar; Ramasubramaniam, Ashwin

    Rubrene crystals are promising organic electronic and optoelectronic materials due to their high charge carrier mobility. Recent studies have shown that the electronic properties of rubrene films can be tuned by substrate-induced strain, suggesting a new route towards the design of more efficient devices. Here, we present a first-principles density functional theory and many-body perturbation theory analysis of strain-induced changes to the mechanical, electronic, and optical properties of rubrene crystals. With an applied strain that is consistent with experiment, we predict changes of hole motilities in excellent agreement with electrical conductivity measurements. Furthermore, we predict that the optical absorption and nature of low-energy excitons within the crystal can be tuned by an applied strain as low as 1%. This work utilized resources at the Center for Nanoscale Materials, supported by the U.S. Department of Energy under Contract No. DE-AC02-06CH11357.

  1. Digital optical computers at the optoelectronic computing systems center

    NASA Technical Reports Server (NTRS)

    Jordan, Harry F.

    1991-01-01

    The Digital Optical Computing Program within the National Science Foundation Engineering Research Center for Opto-electronic Computing Systems has as its specific goal research on optical computing architectures suitable for use at the highest possible speeds. The program can be targeted toward exploiting the time domain because other programs in the Center are pursuing research on parallel optical systems, exploiting optical interconnection and optical devices and materials. Using a general purpose computing architecture as the focus, we are developing design techniques, tools and architecture for operation at the speed of light limit. Experimental work is being done with the somewhat low speed components currently available but with architectures which will scale up in speed as faster devices are developed. The design algorithms and tools developed for a general purpose, stored program computer are being applied to other systems such as optimally controlled optical communication networks.

  2. A nonlinear optoelectronic filter for electronic signal processing.

    PubMed

    Loh, William; Yegnanarayanan, Siva; Ram, Rajeev J; Juodawlkis, Paul W

    2014-01-01

    The conversion of electrical signals into modulated optical waves and back into electrical signals provides the capacity for low-loss radio-frequency (RF) signal transfer over optical fiber. Here, we show that the unique properties of this microwave-photonic link also enable the manipulation of RF signals beyond what is possible in conventional systems. We achieve these capabilities by realizing a novel nonlinear filter, which acts to suppress a stronger RF signal in the presence of a weaker signal independent of their separation in frequency. Using this filter, we demonstrate a relative suppression of 56 dB for a stronger signal having a 1-GHz center frequency, uncovering the presence of otherwise undetectable weaker signals located as close as 3.5 Hz away. The capabilities of the optoelectronic filter break the conventional limits of signal detection, opening up new possibilities for radar and communication systems, and for the field of precision frequency metrology. PMID:24402418

  3. Optoelectronic investigation of nanodiamond interactions with human blood

    NASA Astrophysics Data System (ADS)

    Ficek, M.; Wróbel, M. S.; Wasowicz, M.; Jedrzejewska-Szczerska, M.

    2016-03-01

    We present optoelectronic investigation of in vitro interactions of whole human blood with different nanodiamond biomarkers. Plasmo-chemical modifications of detonation nanodiamond particles gives the possibility for controlling their surface for biological applications. Optical investigations reveal the biological activity of nanodiamonds in blood dependent on its surface termination. We compare different types of nanodiamonds: commercial non-modified detonation nanodiamonds, and nanodiamonds modified by MW PACVD method with H2-termination, and chemically modified nanodiamond with O2-termination. The absorption spectra, and optical microscope investigations were conducted. The results indicate haemocompatibility of non-modified detonation nanodiamond as well as modified nanodiamonds, which enables their application for drug delivery, as well as sensing applications.

  4. Injectable, Cellular-Scale Optoelectronics with Applications for Wireless Optogenetics

    NASA Astrophysics Data System (ADS)

    Kim, Tae-il; McCall, Jordan G.; Jung, Yei Hwan; Huang, Xian; Siuda, Edward R.; Li, Yuhang; Song, Jizhou; Song, Young Min; Pao, Hsuan An; Kim, Rak-Hwan; Lu, Chaofeng; Lee, Sung Dan; Song, Il-Sun; Shin, GunChul; Al-Hasani, Ream; Kim, Stanley; Tan, Meng Peun; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.; Bruchas, Michael R.

    2013-04-01

    Successful integration of advanced semiconductor devices with biological systems will accelerate basic scientific discoveries and their translation into clinical technologies. In neuroscience generally, and in optogenetics in particular, the ability to insert light sources, detectors, sensors, and other components into precise locations of the deep brain yields versatile and important capabilities. Here, we introduce an injectable class of cellular-scale optoelectronics that offers such features, with examples of unmatched operational modes in optogenetics, including completely wireless and programmed complex behavioral control over freely moving animals. The ability of these ultrathin, mechanically compliant, biocompatible devices to afford minimally invasive operation in the soft tissues of the mammalian brain foreshadow applications in other organ systems, with potential for broad utility in biomedical science and engineering.

  5. Optoelectronic properties of (ZnO)60 isomers.

    PubMed

    Caddeo, Claudia; Malloci, Giuliano; De Angelis, Filippo; Colombo, Luciano; Mattoni, Alessandro

    2012-11-01

    We studied the optoelectronic properties of six possible structures of the (ZnO)(60) cluster using density functional theory (DFT). Vertical ionization energies and electron affinities are calculated through total energy differences, while the optical absorption spectra are obtained by using hybrid time-dependent DFT. The (ZnO)(60) cluster has been proven to be particularly stable and it is of potential interest for future applications in nanoelectronics, but its ground-state configuration has been unknown to date. Since the relative stability inferred from total energy calculations suffers from a strong dependence on the computational scheme adopted, we combined it with optical spectroscopy to identify the most abundant geometrical structure of this cluster. The calculated optical spectra are different for each isomer and they could be thus used in comparison with experimental data to explain the ground state of (ZnO)(60). PMID:23000945

  6. Microbeam High Angular Resolution Diffraction Applied to Optoelectronic Devices

    SciTech Connect

    Kazimirov, A.; Bilderback, D. H.; Sirenko, A. A.; Cai, Z.-H.; Lai, B.

    2007-01-19

    Collimating perfect crystal optics in a combination with the X-ray focusing optics has been applied to perform high angular resolution microbeam diffraction and scattering experiments on micron-size optoelectronic devices produced by modern semiconductor technology. At CHESS, we used capillary optics and perfect Si/Ge crystal(s) arrangement to perform X-ray standing waves, high angular-resolution diffraction and high resolution reciprocal space mapping analysis. At the APS, 2ID-D microscope beamline, we employed a phase zone plate producing a beam with the size of 240 nm in the horizontal plane and 350 nm in the vertical (diffraction) plane and a perfect Si (004) analyzer crystal to perform diffraction analysis of selectively grown InGaAsP and InGaAlAs-based waveguides with arc sec angular resolution.

  7. A nonlinear optoelectronic filter for electronic signal processing

    PubMed Central

    Loh, William; Yegnanarayanan, Siva; Ram, Rajeev J.; Juodawlkis, Paul W.

    2014-01-01

    The conversion of electrical signals into modulated optical waves and back into electrical signals provides the capacity for low-loss radio-frequency (RF) signal transfer over optical fiber. Here, we show that the unique properties of this microwave-photonic link also enable the manipulation of RF signals beyond what is possible in conventional systems. We achieve these capabilities by realizing a novel nonlinear filter, which acts to suppress a stronger RF signal in the presence of a weaker signal independent of their separation in frequency. Using this filter, we demonstrate a relative suppression of 56 dB for a stronger signal having a 1-GHz center frequency, uncovering the presence of otherwise undetectable weaker signals located as close as 3.5 Hz away. The capabilities of the optoelectronic filter break the conventional limits of signal detection, opening up new possibilities for radar and communication systems, and for the field of precision frequency metrology. PMID:24402418

  8. Education kits for fiber optics, optoelectronics, and optical communications

    NASA Astrophysics Data System (ADS)

    Hájek, Martin; Švrček, Miroslav

    2007-04-01

    Our company MIKROKOM, s.r.o. is engaged for many years in development of education equipment and kits for fiber optics, optoelectronics and optical communications. We would like to inform competitors of conference about results of this long-time development. Requirements on education kits and equipment in a modern and dynamic area as is optical communications and fiber optics are quite difficult. The education kits should to clearly introduce students to given issue - the most important physical principles and technical approaches, but it should to introduce also to new and modern technologies, which are quickly changing and developing. On the other hand should be these tools and kits reasonable for the schools. In our paper we would like to describe possible ways of development of this education kits and equipment and present our results of long-time work, which covers very wide range. On the one hand we developed equipment and kits for clear demonstration of physical effects using plastic optical fibers POF, next we prepare kits with a glass fibers, which are the most used fibers in practice and after as much as the kits, which covers broad range of passive and active elements of the optical networks and systems and which makes possible to create complex optical transmission connection. This kind of systems with using corresponding tools and equipment introduce the students to properties, manipulation, measurement and usage of optical fibers, traces and many active and passive components. Furthermore, with using different sorts of optical sources, photodetectors, fiber optics couplers etc., students can get acquainted with all optoelectronics transmission system, which uses different sorts of signals. Special part will be devoted also to effort mentioned before - to implement modern technologies such as e.g. Wavelength Division Multiplex (WDM) into the education kits. Our presentation will inform auditors about development of mentioned education kits and

  9. Scanning tunneling microscopy studies of diamond films and optoelectronic materials

    NASA Technical Reports Server (NTRS)

    Perez, Jose M.

    1993-01-01

    In this report, we report on progress achieved from 12/1/92 to 10/1/93 under the grant entitled 'Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials'. We have set-up a chemical vapor deposition (CVD) diamond film growth system and a Raman spectroscopy system to study the nucleation and growth of diamond films with atomic resolution using scanning tunneling microscopy (STM). A unique feature of the diamond film growth system is that diamond films can be transferred directly to the ultrahigh vacuum (UHV) chamber of a scanning tunneling microscope without contaminating the films by exposure to air. The University of North Texas (UNT) provided $20,000 this year as matching funds for the NASA grant to purchase the diamond growth system. In addition, UNT provided a Coherent Innova 90S Argon ion laser, a Spex 1404 double spectrometer, and a Newport optical table costing $90,000 to set-up the Raman spectroscopy system. The CVD diamond growth system and Raman spectroscopy system will be used to grow and characterize diamond films with atomic resolution using STM as described in our proposal. One full-time graduate student and one full-time undergraduate student are supported under this grant. In addition, several graduate and undergraduate students were supported during the summer to assist in setting-up the diamond growth and Raman spectroscopy systems. We have obtained research results concerning STM of the structural and electronic properties of CVD grown diamond films, and STM and scanning tunneling spectroscopy of carbon nanotubes. In collaboration with the transmission electron microscopy (TEM) group at UNT, we have also obtained results concerning the optoelectronic material siloxene. These results were published in refereed scientific journals, submitted for publication, and presented as invited and contributed talks at scientific conferences.

  10. Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.

    PubMed

    Jariwala, Deep; Davoyan, Artur R; Tagliabue, Giulia; Sherrott, Michelle C; Wong, Joeson; Atwater, Harry A

    2016-09-14

    We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency. PMID:27563733

  11. Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.

    PubMed

    Jariwala, Deep; Davoyan, Artur R; Tagliabue, Giulia; Sherrott, Michelle C; Wong, Joeson; Atwater, Harry A

    2016-09-14

    We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

  12. Modeling and optoelectronic realization of an artificial cortex

    NASA Astrophysics Data System (ADS)

    Pashaie, Ramin

    codes and cortical topological computational maps. Next step in this research is seeking suitable enabling technologies, such as electronics and optics, for hardware implementation of these cortical models. It is a general consensus that realization of parallelism and massive interconnections can be done far better in optics compared to electronics. Nevertheless, one can exploit optoelectronic methodologies that combine the benefits of optics with flexibilities of electronics. An innovative optoelectronic approach is taking advantage of the optical mechanism of a special type of stimulable storage phosphor, the so called electron trapping materials. Our analytical modelings and experimental works reveal that the equilibrium state luminescence of this material can be controlled to generate a variety of different nonlinear behaviors including quasi-quadratic responses that can be used for generation of quadratic return maps. Combining this versatility with the state-of-the-art high speed spatial light modulators and CCD cameras, large arrays of quadratic return maps can be accommodated in a thin film of electron trapping material. Another approach which is investigated in this dissertation is based on using the recently developed digital microelectromechanic spatial light modulators. These modulators can control the exposure precisely. We show that a closed loop of such a spatial light modulator and a CCD camera can be used to build an optoelectronic machine suitable for parallel recursive computations similar to our cortical models.

  13. Oxide semiconductors for organic opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Sigdel, Ajaya K.

    In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the

  14. Middle infrared optoelectronic absorption systems for monitoring physiological glucose solutions

    NASA Astrophysics Data System (ADS)

    Martin, W. Blake

    Tight monitoring of the glucose levels for diabetic individuals is essential to control long-term complications. A definitive diabetes management system has yet to be developed for the diabetic. This research investigates the application of middle infrared absorption frequencies for monitoring glucose levels in biological solutions. Three frequencies were identified using a Fourier transform infrared spectrometer and correlated to changes in glucose concentrations. The 1035 +/- 1 cm-1 frequency was determined to be the best representative frequency. Other biological molecules contributed no significant interference to monitoring glucose absorption. A second frequency at 1193 cm-1 was suggested as a representative background absorption frequency, which could be used for more accurate glucose absorption values. Next, a quantum cascade laser optoelectronic absorption system was designed and developed to monitor glucose. After careful alignment and design, the system was used to monitor physiological glucose concentrations. Correlation at 1036 cm-1 with glucose changes was comparable to the previous results. The use of the background absorption frequency was verified. This frequency essentially acts as a calibrating frequency to adjust in real-time to any changes in the background absorption that may alter the accuracy of the predicted glucose value. An evanescent wave cavity ring-down spectroscopy technique was explored to monitor molecules in a biological solution. Visible light at 425 nm was used to monitor hemoglobin in control urine samples. An adsorption isotherm for hemoglobin was detectable to limit of 5.8 nM. Evanescent wave cavity ring-down spectroscopy would be useful for a glucose solution. Given an equivalent system designed for the middle infrared, the molar extinction coefficient of glucose allows for a detectable limit of 45 mg/dl for a free-floating glucose solution, which is below normal physiological concentrations. The future use of a hydrophobic

  15. Programmable Optoelectronic Multiprocessors: Design, Performance and CAD Development

    NASA Astrophysics Data System (ADS)

    Kiamilev, Fouad Eskender

    1992-01-01

    This thesis describes the development of Programmable Optoelectronic Multiprocessor (POEM) architectures and systems. POEM systems combine simple electronic processing elements with free-space optical interconnects to implement high-performance, massively-parallel computers. POEM architectures are fundamentally different from architectures used in conventional VLSI systems. Novel system partitioning and processing element design methods have been developed to ensure efficient implementation of POEM architectures with optoelectronic technology. The main contributions of this thesis are: architecture and software design for the POEM prototype built at UCSD; detailed technology design-tradeoff and comparison studies for POEM interconnection networks; and application of the VHSIC Hardware Description Language (VHDL) to the design, simulation, and synthesis of POEM computers. A general-purpose POEM SIMD parallel computer architecture has been designed for symbolic computing applications. A VHDL simulation of this architecture was written to test the POEM hardware running parallel programs prior to prototype fabrication. Detailed performance comparison of this architecture with all-optical computing, based on symbolic substitution, has also been carried out to show that POEMs offer higher computational efficiency. A detailed technological design of a packet-switched POEM multistage interconnection network system has been performed. This design uses optically interconnected stages of K x K electronic switching elements, where K is a variable parameter, called grain-size, that determines the ratio of optics to electronics in the system. A thorough cost and performance comparison between this design and existing VLSI implementations was undertaken to show that the POEM approach offers better scalability and higher performance. The grain-size was optimized, showing that switch sizes of 16 x 16 to 256 x 256 provide maximum performance/cost. The effects of varying

  16. Computational evaluation of optoelectronic properties for organic/carbon materials.

    PubMed

    Shuai, Zhigang; Wang, Dong; Peng, Qian; Geng, Hua

    2014-11-18

    CONSPECTUS: Organic optoelectronic materials are used in a variety of devices, including light-emitting diodes, field-effect transistors, photovoltaics, thermoelectrics, spintronics, and chemico- and biosensors. The processes that determine the intrinsic optoelectronic properties occur either in the photoexcited states or within the electron-pumped charged species, and computations that predict these optical and electrical properties would help researchers design new materials. In this Account, we describe recent advances in related density functional theory (DFT) methods and present case studies that examine the efficiency of light emission, carrier mobility, and thermoelectric figures of merit by calculation of the electron-vibration couplings. First we present a unified vibrational correlation function formalism to evaluate the excited-state radiative decay rate constant kr, the nonradiative decay rate constant knr, the intersystem crossing rate constant kISC, and the optical spectra. The molecular parameters that appear in the formalism, such as the electronic excited-state energy, vibrational modes, and vibronic couplings, require extensive DFT calculations. We used experiments for anthracene at both low and ambient temperatures to benchmark the calculated photophysical parameters. In the framework of Fermi's golden rule, we incorporated the non-adiabatic coupling and the spin-orbit coupling to evaluate the phosphorescence efficiency and emission spectrum. Both of these are in good agreement with experimental results for anthracene and iridium compounds. Band electron scattering and relaxation processes within Boltzmann theory can describe charge transport in two-dimensional carbon materials and closely packed organic solids. For simplicity, we considered only the acoustic phonon scattering as modeled by the deformation potential approximation coupled with extensive DFT calculations for band structures. We then related the carrier mobility to the band

  17. High throughput optoelectronic smart pixel systems using diffractive optics

    NASA Astrophysics Data System (ADS)

    Chen, Chih-Hao

    1999-12-01

    Recent developments in digital video, multimedia technology and data networks have greatly increased the demand for high bandwidth communication channels and high throughput data processing. Electronics is particularly suited for switching, amplification and logic functions, while optics is more suitable for interconnections and communications with lower energy and crosstalk. In this research, we present the design, testing, integration and demonstration of several optoelectronic smart pixel devices and system architectures. These systems integrate electronic switching/processing capability with parallel optical interconnections to provide high throughput network communication and pipeline data processing. The Smart Pixel Array Cellular Logic processor (SPARCL) is designed in 0.8 m m CMOS and hybrid integrated with Multiple-Quantum-Well (MQW) devices for pipeline image processing. The Smart Pixel Network Interface (SAPIENT) is designed in 0.6 m m GaAs and monolithically integrated with LEDs to implement a highly parallel optical interconnection network. The Translucent Smart Pixel Array (TRANSPAR) design is implemented in two different versions. The first version, TRANSPAR-MQW, is designed in 0.5 m m CMOS and flip-chip integrated with MQW devices to provide 2-D pipeline processing and translucent networking using the Carrier- Sense-MultipleAccess/Collision-Detection (CSMA/CD) protocol. The other version, TRANSPAR-VM, is designed in 1.2 m m CMOS and discretely integrated with VCSEL-MSM (Vertical-Cavity-Surface- Emitting-Laser and Metal-Semiconductor-Metal detectors) chips and driver/receiver chips on a printed circuit board. The TRANSPAR-VM provides an option of using the token ring network protocol in addition to the embedded functions of TRANSPAR-MQW. These optoelectronic smart pixel systems also require micro-optics devices to provide high resolution, high quality optical interconnections and external source arrays. In this research, we describe an innovative

  18. Aqueous solution synthesis of zinc oxide for application in optoelectronics

    NASA Astrophysics Data System (ADS)

    Joo, John Hwajong

    Recently, ZnO has garnered widespread attention in the semiconductor community for its large set of useful properties, which include a wide bandgap and its resulting optical transparency, a large exciton binding energy, a significant piezoelectric response, and good electrical conductivity. In many ways, it shares many properties with a widely used and technologically important semiconductor GaN, which is widely used for blue LEDs and lasers. However, ZnO cannot substitute for GaN in most optoelectronic applications, because it cannot be doped p-type. On the other hand, unlike many traditional, covalently bonded semiconductors like GaN, ZnO can be easily formed aqueous solutions at close to room temperature and pressure in the form of large crystals or a variety of nanostructures, making possible applications that are normally very difficult with traditional semiconductors. In this light, we aimed to take advantage of aqueous solution-based, ZnO growth techniques and incorporated ZnO structures novel optoelectronic and photonic structures. By controlling the morphology of ZnO, we studied the effects of nanowire-based ZnO/Cu2O solar cells. Carrier collection was increased using a nanowire-based device architecture. The main result, however, was the time evolution of the performance of these devices due to the movement of ionized defects in the material. The effects of geometry on the ageing characteristics were studied, which showed that the carrier collection could be increased further with aging in a nanowire Cu2O solar cell. The aging behavior was substantially different between nanowire and planar solar cells, which implies that future design of nanostructured solar cells must long term aging effects. In addition to solar cells, we explored the possibilities of using aqueous solution growth of ZnO to fabricated whispering gallery mode optical cavities and waveguides for enhancing extraction from a single photon source. In both applications, we used templated

  19. EDFA-based coupled opto-electronic oscillator and its phase noise

    NASA Technical Reports Server (NTRS)

    Salik, Ertan; Yu, Nan; Tu, Meirong; Maleki, Lute

    2004-01-01

    EDFA-based coupled opto-electronic oscillator (COEO), an integrated optical and microwave oscillator that can generate picosecond optical pulses, is presented. the phase noise measurements of COEO show better performance than synthesizer-driven mode-locked laser.

  20. Design of a high-resolution optoelectronic retinal prosthesis.

    PubMed

    Palanker, Daniel; Vankov, Alexander; Huie, Phil; Baccus, Stephen

    2005-03-01

    It has been demonstrated that electrical stimulation of the retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. However, current retinal implants provide very low resolution (just a few electrodes), whereas at least several thousand pixels would be required for functional restoration of sight. This paper presents the design of an optoelectronic retinal prosthetic system with a stimulating pixel density of up to 2500 pix mm(-2) (corresponding geometrically to a maximum visual acuity of 20/80). Requirements on proximity of neural cells to the stimulation electrodes are described as a function of the desired resolution. Two basic geometries of sub-retinal implants providing required proximity are presented: perforated membranes and protruding electrode arrays. To provide for natural eye scanning of the scene, rather than scanning with a head-mounted camera, the system operates similar to 'virtual reality' devices. An image from a video camera is projected by a goggle-mounted collimated infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. The goggles are transparent to visible light, thus allowing for the simultaneous use of remaining natural vision along with prosthetic stimulation. Optical delivery of visual information to the implant allows for real-time image processing adjustable to retinal architecture, as well as flexible control of image processing algorithms and stimulation parameters. PMID:15876646

  1. Energetic Beam Processing of Silicon to Engineer Optoelectronically Active Defects

    NASA Astrophysics Data System (ADS)

    Recht, Daniel

    This thesis explores ways to use ion implantation and nanosecond pulsed laser melting, both energetic beam techniques, to engineer defects in silicon. These defects are chosen to facilitate the use of silicon in optoelectronic applications for which its indirect bandgap is not ideal. Chapter 2 develops a kinetic model for the use of point defects as luminescence centers for light-emitting diodes and demonstrates an experimental procedure capable of high-throughput screening of the electroluminescent properties of such defects. Chapter 3 discusses the dramatic change in optical absorption observed in silicon highly supersaturated (i.e., hyperdoped) with the chalcogens sulfur, selenium, and tellurium and reports the first measurements of the optical absorption of such materials for photon energies greater than the bandgap of silicon. Chapter 3 examines the use of silicon hyperdoped with chalcogens in light detectors and concludes that while these devices display strong internal gain that is coupled to a particular type of surface defect, hyperdoping with chalcogens does not lead directly to measurable sub-bandgap photoconductivity. Chapter 4 considers the potential for Silicon to serve as the active material in an intermediate-band solar cell and reports experimental progress on two proposed approaches for hyperdoping silicon for this application. The main results of this chapter are the use of native-oxide etching to control the surface evaporation rate of sulfur from silicon and the first synthesis of monocrystalline silicon hyperdoped with gold.

  2. A bimodal optoelectronic flow-through detector for phosphate determination.

    PubMed

    Fiedoruk, Marta; Mieczkowska, Elżbieta; Koncki, Robert; Tymecki, Lukasz

    2014-10-01

    A miniature flow-through detector useful for bimodal, photometric and fluorimetric, determination of phosphates has been developed. This optoelectronic device made of four light emitting diodes (LEDs) integrated in the form of 85 µL optical cell is easily applied in flow analysis manifolds. These LEDs play the roles of light source for photometric measurements, fluorescence inductors and detector of absorbance and fluorescence. For photometric mode of determinations a phosphomolybdenum blue method has been applied. The fluorimetric method of phosphate determination is based on quenching of rhodamine fluorescence by the heteropolyacid. The developed detector used in a simple three-channel flow injection analysis (FIA) system allows photometric or fluorimetric determination of phosphate in the wide range of concentration. The detection limits found for photometric and fluorimetric modes of FIA measurements are 5.5 mg L(-1) and 10.4 µg L(-1), respectively. The potential utility of the flow-through detector for the needs of food and clinical analysis has been demonstrated. PMID:25059150

  3. Electronic and optoelectronic materials and devices inspired by nature

    NASA Astrophysics Data System (ADS)

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  4. Manipulating and assembling metallic beads with Optoelectronic Tweezers

    PubMed Central

    Zhang, Shuailong; Juvert, Joan; Cooper, Jonathan M.; Neale, Steven L.

    2016-01-01

    Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been developed as a micromanipulation technology for controlling micro- and nano-particles with applications such as cell sorting and studying cell communications. Additionally, the capability of moving small objects accurately and assembling them into arbitrary 2D patterns also makes OET an attractive technology for microfabrication applications. In this work, we demonstrated the use of OET to manipulate conductive silver-coated Poly(methyl methacrylate) (PMMA) microspheres (50 μm diameter) into tailored patterns. It was found that the microspheres could be moved at a max velocity of 3200 μm/s, corresponding to 4.2 nano-newton (10−9 N) DEP force, and also could be positioned with high accuracy via this DEP force. The underlying mechanism for this strong DEP force is shown by our simulations to be caused by a significant increase of the electric field close to the particles, due to the interaction between the field and the silver shells coating the microspheres. The associated increase in electrical gradient causes DEP forces that are much stronger than any previously reported for an OET device, which facilitates manipulation of the metallic microspheres efficiently without compromise in positioning accuracy and is important for applications on electronic component assembling and circuit construction. PMID:27599445

  5. Technical quality assessment of an optoelectronic system for movement analysis

    NASA Astrophysics Data System (ADS)

    Di Marco, R.; Rossi, S.; Patanè, F.; Cappa, P.

    2015-02-01

    The Optoelectronic Systems (OS) are largely used in gait analysis to evaluate the motor performances of healthy subjects and patients. The accuracy of marker trajectories reconstruction depends on several aspects: the number of cameras, the dimension and position of the calibration volume, and the chosen calibration procedure. In this paper we propose a methodology to evaluate the effects of the mentioned sources of error on the reconstruction of marker trajectories. The novel contribution of the present work consists in the dimension of the tested calibration volumes, which is comparable with the ones normally used in gait analysis; in addition, to simulate trajectories during clinical gait analysis, we provide non-default paths for markers as inputs. Several calibration procedures are implemented and the same trial is processed with each calibration file, also considering different cameras configurations. The RMSEs between the measured trajectories and the optimal ones are calculated for each comparison. To investigate the significant differences between the computed indices, an ANOVA analysis is implemented. The RMSE is sensible to the variations of the considered calibration volume and the camera configurations and it is always inferior to 43 mm.

  6. Optoelectronic Properties of Hybrid Titania Nanotubes/Hematite Nanoparticles Structures

    NASA Astrophysics Data System (ADS)

    Wang, Lili; Panaitescu, Eugen; Menon, Latika

    2015-03-01

    TiO2/Fe2O3 nanostructures are becoming promising alternatives for improving cost effectiveness (in /W) of emerging photovoltaic devices such as dye sensitized or metal-insulator-semiconductor solar cells, combining the low cost, earth abundance and stability of the materials with the enhanced performance offered by the nanoscale architecture. We investigated novel, high quality titania/hematite composites, namely hematite nanoparticle decorated titania nanotube arrays, which were obtained by a simple, inexpensive and easily scalable two-step process, electrochemical anodization of titanium followed by forced hydrolysis. The titania nanotubular scaffold provides a large active surface area, while the iron oxide nanoparticles significantly broaden the light absorption range into the visible region. The morphological and structural characteristics of the samples were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The light absorption efficiency was measured by diffuse reflectance spectroscopy (DRS), and the optoelectronic behavior of the hybrid structures was analyzed by IV measurements under simulated solar illumination. The influence of the synthesis process and the structure design on the photovoltaic performance is currently investigated for optimal device prototyping.

  7. Extreme Light Management in Mesoporous Wood Cellulose Paper for Optoelectronics.

    PubMed

    Zhu, Hongli; Fang, Zhiqiang; Wang, Zhu; Dai, Jiaqi; Yao, Yonggang; Shen, Fei; Preston, Colin; Wu, Wenxin; Peng, Peng; Jang, Nathaniel; Yu, Qingkai; Yu, Zongfu; Hu, Liangbing

    2016-01-26

    Wood fibers possess natural unique hierarchical and mesoporous structures that enable a variety of new applications beyond their traditional use. We dramatically modulate the propagation of light through random network of wood fibers. A highly transparent and clear paper with transmittance >90% and haze <1.0% applicable for high-definition displays is achieved. By altering the morphology of the same wood fibers that form the paper, highly transparent and hazy paper targeted for other applications such as solar cell and antiglare coating with transmittance >90% and haze >90% is also achieved. A thorough investigation of the relation between the mesoporous structure and the optical properties in transparent paper was conducted, including full-spectrum optical simulations. We demonstrate commercially competitive multitouch touch screen with clear paper as a replacement for plastic substrates, which shows excellent process compatibility and comparable device performance for commercial applications. Transparent cellulose paper with tunable optical properties is an emerging photonic material that will realize a range of much improved flexible electronics, photonics, and optoelectronics.

  8. Design of a high-resolution optoelectronic retinal prosthesis

    NASA Astrophysics Data System (ADS)

    Palanker, Daniel; Vankov, Alexander; Huie, Phil; Baccus, Stephen

    2005-03-01

    It has been demonstrated that electrical stimulation of the retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. However, current retinal implants provide very low resolution (just a few electrodes), whereas at least several thousand pixels would be required for functional restoration of sight. This paper presents the design of an optoelectronic retinal prosthetic system with a stimulating pixel density of up to 2500 pix mm-2 (corresponding geometrically to a maximum visual acuity of 20/80). Requirements on proximity of neural cells to the stimulation electrodes are described as a function of the desired resolution. Two basic geometries of sub-retinal implants providing required proximity are presented: perforated membranes and protruding electrode arrays. To provide for natural eye scanning of the scene, rather than scanning with a head-mounted camera, the system operates similar to 'virtual reality' devices. An image from a video camera is projected by a goggle-mounted collimated infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. The goggles are transparent to visible light, thus allowing for the simultaneous use of remaining natural vision along with prosthetic stimulation. Optical delivery of visual information to the implant allows for real-time image processing adjustable to retinal architecture, as well as flexible control of image processing algorithms and stimulation parameters.

  9. Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing.

    PubMed

    Jariwala, Deep; Sangwan, Vinod K; Lauhon, Lincoln J; Marks, Tobin J; Hersam, Mark C

    2013-04-01

    In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in selected applications, issues surrounding structural inhomogeneity and imprecise assembly have impeded robust and reliable implementation of carbon nanomaterials in widespread technologies. However, with recent advances in synthesis, sorting, and assembly techniques, carbon nanomaterials are experiencing renewed interest as the basis of numerous scalable technologies. Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity samples. Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area. In this manner, this article will provide guidance to future application developers and also articulate the remaining research challenges confronting this field.

  10. Indium phosphide nanowires and their applications in optoelectronic devices

    PubMed Central

    Zafar, Fateen

    2016-01-01

    Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III–V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core–shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed. PMID:27118920

  11. Extreme Light Management in Mesoporous Wood Cellulose Paper for Optoelectronics.

    PubMed

    Zhu, Hongli; Fang, Zhiqiang; Wang, Zhu; Dai, Jiaqi; Yao, Yonggang; Shen, Fei; Preston, Colin; Wu, Wenxin; Peng, Peng; Jang, Nathaniel; Yu, Qingkai; Yu, Zongfu; Hu, Liangbing

    2016-01-26

    Wood fibers possess natural unique hierarchical and mesoporous structures that enable a variety of new applications beyond their traditional use. We dramatically modulate the propagation of light through random network of wood fibers. A highly transparent and clear paper with transmittance >90% and haze <1.0% applicable for high-definition displays is achieved. By altering the morphology of the same wood fibers that form the paper, highly transparent and hazy paper targeted for other applications such as solar cell and antiglare coating with transmittance >90% and haze >90% is also achieved. A thorough investigation of the relation between the mesoporous structure and the optical properties in transparent paper was conducted, including full-spectrum optical simulations. We demonstrate commercially competitive multitouch touch screen with clear paper as a replacement for plastic substrates, which shows excellent process compatibility and comparable device performance for commercial applications. Transparent cellulose paper with tunable optical properties is an emerging photonic material that will realize a range of much improved flexible electronics, photonics, and optoelectronics. PMID:26673796

  12. Laser processing of components for polymer mircofluidic and optoelectronic products

    NASA Astrophysics Data System (ADS)

    Gillner, Arnold; Bremus-Koebberling, Elke A.; Wehner, Martin; Russek, Ulrich A.; Berden, Thomas

    2001-06-01

    Miniaturization is one of the keywords for the production of customer oriented and highly integrated consumer products like mobile phones, portables and other products from the daily life and there are some first silicon made products like pressure sensors, acceleration sensors and micro fluidic components, which are built in automobiles, washing machines and medical products. However, not all applications can be covered with this material, because of the limitations in lateral and 3-dimensional structuring, the mechanical behavior, the functionality and the costs of silicon. Therefore other materials, like polymers have been selected as suitable candidates for cost effective mass products. This holds especially for medical and optical applications, where the properties of selected polymers, like biocompatibility, inert chemical behavior and high transparency can be used. For this material laser micro processing offers appropriate solutions for structuring as well as for packaging with high flexibility, material variety, structure size, processing speed and easy integration into existing fabrication plants. The paper presents recent results and industrial applications of laser micro processing for polymer micro fluidic devices, like micro analysis systems, micro reactors and medical micro implants, where excimer radiation is used for lateral structuring and diode lasers have used for joining and packaging. Similar technologies have been applied to polymer waveguides to produce passive optoelectronic components for high speed interconnection with surface roughness less than 20 nm and low attenuation. The paper also reviews the technical and economical limitations and the potential of the technology for other micro products.

  13. New Schemes for Improved Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Yao, Steve; Ji, Yu; Ilchenko, Vladimir

    2000-01-01

    The opto-Electronic Oscillator (OEO) has already demonstrated superior spectral purity as a for microwave and millimeter wave reference signals. Experimental results have produced a performance characterized by noise as low as -50 dBc/Hz at 10 Hz and -140 dBc/Hz for a 10 GHz oscillator. This performance is significant because it was produced by an oscillator that was free running. Since the noise in an OEO is independent of the oscillation frequency, the same performance may also be obtained at higher frequency. The recent work in our laboratory has been focused in three areas: 1) realization of a compact OEO based on semiconductor lasers and modulators, 2) reduction of the close-to-carrier noise of the OEO originating from the 1/f noise of the amplifier, and 3) miniaturization of the OEO. In this paper we report on progress made in these areas, and describe future plans to increase the performance and the efficiency of the OEO.

  14. A nanomesh scaffold for supramolecular nanowire optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Zhong, Xiaolan; Pavlica, Egon; Li, Songlin; Klekachev, Alexander; Bratina, Gvido; Ebbesen, Thomas W.; Orgiu, Emanuele; Samorì, Paolo

    2016-10-01

    Supramolecular organic nanowires are ideal nanostructures for optoelectronics because they exhibit both efficient exciton generation as a result of their high absorption coefficient and remarkable light sensitivity due to the low number of grain boundaries and high surface-to-volume ratio. To harvest photocurrent directly from supramolecular nanowires it is necessary to wire them up with nanoelectrodes that possess different work functions. However, devising strategies that can connect multiple nanowires at the same time has been challenging. Here, we report a general approach to simultaneously integrate hundreds of supramolecular nanowires of N,N‧-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) in a hexagonal nanomesh scaffold with asymmetric nanoelectrodes. Optimized PTCDI-C8 nanowire photovoltaic devices exhibit a signal-to-noise ratio approaching 107, a photoresponse time as fast as 10 ns and an external quantum efficiency >55%. This nanomesh scaffold can also be used to investigate the fundamental mechanism of photoelectrical conversion in other low-dimensional semiconducting nanostructures.

  15. Fluorescence particle detection using microfluidics and planar optoelectronic elements

    NASA Astrophysics Data System (ADS)

    Kettlitz, Siegfried W.; Moosmann, Carola; Valouch, Sebastian; Lemmer, Uli

    2014-05-01

    Detection of fluorescent particles is an integral part of flow cytometry for analysis of selectively stained cells. Established flow cytometer designs achieve great sensitivity and throughput but require bulky and expensive components which prohibit mass production of small single-use point-of-care devices. The use of a combination of innovative technologies such as roll-to-roll printed microuidics with integrated optoelectronic components such as printed organic light emitting diodes and printed organic photodiodes enables tremendous opportunities in cost reduction, miniaturization and new application areas. In order to harvest these benefits, the optical setup requires a redesign to eliminate the need for lenses, dichroic mirrors and lasers. We investigate the influence of geometric parameters on the performance of a thin planar design which uses a high power LED as planar light source and a PIN-photodiode as planar detector. Due to the lack of focusing optics and inferior optical filters, the device sensitivity is not yet on par with commercial state of the art flow cytometer setups. From noise measurements, electronic and optical considerations we deduce possible pathways of improving the device performance. We identify that the sensitivity is either limited by dark noise for very short apertures or by noise from background light for long apertures. We calculate the corresponding crossover length. For the device design we conclude that a low device thickness, low particle velocity and short aperture length are necessary to obtain optimal sensitivity.

  16. Narrow band gap conjugated polymers for emergent optoelectronic technologies

    NASA Astrophysics Data System (ADS)

    Azoulay, Jason D.; Zhang, Benjamin A.; London, Alexander E.

    2015-09-01

    Conjugated organic molecules effectively produce and harvest visible light and find utility in a variety of emergent optoelectronic technologies. There is currently interest in expanding the scope of these materials to extend functionality into the infrared (IR) spectral regions and endow functionality relevant in emergent technologies. Developing an understanding of the interplay between chemical and electronic structure in these systems will require control of the frontier orbital energetics (separation, position, and alignment), ground state electronic configurations, interchain arrangements, solid-state properties, and many other molecular features with synthetic precision that has yet to be demonstrated. Bridgehead imine substituted 4H-cyclopenta[2,1-b:3,4-b']dithiophene (CPDT) structural units, in combination with strong acceptors with progressively delocalized π-systems, afford modular donor-acceptor copolymers with broad and long wavelength absorption that spans technologically relevant wavelength (λ) ranges from 0.7 < λ < 3.2 μm.1 Here we demonstrate that electronic and structural manipulation play a major role in influencing the energetics of these systems and ultimately controlling the band gap of the materials. These results bear implication in the development of very narrow band gap systems where precise control will be necessary for achieving desired properties such as interactions with longer wavelength light.

  17. Strain-tuned optoelectronic properties of hollow gallium sulphide microspheres.

    PubMed

    Zhang, Yin; Chen, Chen; Liang, C Y; Liu, Z W; Li, Y S; Che, Renchao

    2015-11-01

    Sulfide semiconductors have attracted considerable attention. The main challenge is to prepare materials with a designable morphology, a controllable band structure and optoelectronic properties. Herein, we report a facile chemical transportation reaction for the synthesis of Ga2S3 microspheres with novel hollow morphologies and partially filled volumes. Even without any extrinsic dopant, photoluminescence (PL) emission wavelength could be facilely tuned from 635 to 665 nm, depending on its intrinsic inhomogeneous strain distribution. Geometric phase analysis (GPA) based on high-resolution transmission electron microscopy (HRTEM) imaging reveals that the strain distribution and the associated PL properties can be accurately controlled by changing the growth temperature gradient, which depends on the distance between the boats used for raw material evaporation and microsphere deposition. The stacking-fault density, lattice distortion degree and strain distribution at the shell interfacial region of the Ga2S3 microspheres could be readily adjusted. Ab initio first-principles calculations confirm that the lowest conductive band (LCB) is dominated by S-3s and Ga-4p states, which shift to the low-energy band as a result of the introduction of tensile strain, well in accordance with the observed PL evolution. Therefore, based on our strain driving strategy, novel guidelines toward the reasonable design of sulfide semiconductors with tunable photoluminescence properties are proposed.

  18. Manipulating and assembling metallic beads with Optoelectronic Tweezers.

    PubMed

    Zhang, Shuailong; Juvert, Joan; Cooper, Jonathan M; Neale, Steven L

    2016-09-07

    Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been developed as a micromanipulation technology for controlling micro- and nano-particles with applications such as cell sorting and studying cell communications. Additionally, the capability of moving small objects accurately and assembling them into arbitrary 2D patterns also makes OET an attractive technology for microfabrication applications. In this work, we demonstrated the use of OET to manipulate conductive silver-coated Poly(methyl methacrylate) (PMMA) microspheres (50 μm diameter) into tailored patterns. It was found that the microspheres could be moved at a max velocity of 3200 μm/s, corresponding to 4.2 nano-newton (10(-9) N) DEP force, and also could be positioned with high accuracy via this DEP force. The underlying mechanism for this strong DEP force is shown by our simulations to be caused by a significant increase of the electric field close to the particles, due to the interaction between the field and the silver shells coating the microspheres. The associated increase in electrical gradient causes DEP forces that are much stronger than any previously reported for an OET device, which facilitates manipulation of the metallic microspheres efficiently without compromise in positioning accuracy and is important for applications on electronic component assembling and circuit construction.

  19. Multilevel organization in hybrid thin films for optoelectronic applications.

    PubMed

    Vohra, Varun; Bolognesi, Alberto; Calzaferri, Gion; Botta, Chiara

    2009-10-20

    In this work we report two simple approaches to prepare hybrid thin films displaying a high concentration of zeolite crystals that could be used as active layers in optoelectronic devices. In the first approach, in order to organize nanodimensional zeolite crystals of 40 nm diameter in an electroactive environment, we chemically modify their external surface and play on the hydrophilic/hydrophobic forces. We obtain inorganic nanocrystals that self-organize in honeycomb electroluminescent polymer structures obtained by breath figure formation. The different functionalizations of the zeolite surface result in different organizations inside the cavities of the polymeric structure. The second approach involving soft-litography techniques allows one to arrange single dye-loaded zeolite L crystals of 800 nm of length by mechanical loading into the nanocavities of a conjugated polymer. Both techniques result in the formation of thin hybrid films displaying three levels of organization: organization of the dye molecules inside the zeolite nanochannels, organization of the zeolite crystals inside the polymer cavities, and micro- or nanostructuration of the polymer.

  20. Optoelectronic Chaos in a Simple Light Activated Feedback Circuit

    NASA Astrophysics Data System (ADS)

    Joiner, K. L.; Palmero, F.; Carretero-González, R.

    The nonlinear dynamics of an optoelectronic negative feedback switching circuit is studied. The circuit, composed of a bulb, a photoresistor, a thyristor and a linear resistor, corresponds to a nightlight device whose light is looped back into its light sensor. Periodic bifurcations and deterministic chaos are obtained by the feedback loop created when the thyristor switches on the bulb in the absence of light being detected by the photoresistor and the bulb light is then looped back into the nightlight to switch it off. The experimental signal is analyzed using tools of delay-embedding reconstruction that yield a reconstructed attractor with fractional dimension and positive Lyapunov exponent suggesting chaotic behavior for some parameter values. We construct a simple circuit model reproducing experimental results that qualitatively matches the different dynamical regimes of the experimental apparatus. In particular, we observe an order-chaos-order transition as the strength of the feedback is varied corresponding to varying the distance between the nightlight bulb and its photo-detector. A two-dimensional parameter diagram of the model reveals that the order-chaos-order transition is generic for this system.

  1. Manipulating and assembling metallic beads with Optoelectronic Tweezers.

    PubMed

    Zhang, Shuailong; Juvert, Joan; Cooper, Jonathan M; Neale, Steven L

    2016-01-01

    Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been developed as a micromanipulation technology for controlling micro- and nano-particles with applications such as cell sorting and studying cell communications. Additionally, the capability of moving small objects accurately and assembling them into arbitrary 2D patterns also makes OET an attractive technology for microfabrication applications. In this work, we demonstrated the use of OET to manipulate conductive silver-coated Poly(methyl methacrylate) (PMMA) microspheres (50 μm diameter) into tailored patterns. It was found that the microspheres could be moved at a max velocity of 3200 μm/s, corresponding to 4.2 nano-newton (10(-9) N) DEP force, and also could be positioned with high accuracy via this DEP force. The underlying mechanism for this strong DEP force is shown by our simulations to be caused by a significant increase of the electric field close to the particles, due to the interaction between the field and the silver shells coating the microspheres. The associated increase in electrical gradient causes DEP forces that are much stronger than any previously reported for an OET device, which facilitates manipulation of the metallic microspheres efficiently without compromise in positioning accuracy and is important for applications on electronic component assembling and circuit construction. PMID:27599445

  2. Electronic and optoelectronic materials and devices inspired by nature.

    PubMed

    Meredith, P; Bettinger, C J; Irimia-Vladu, M; Mostert, A B; Schwenn, P E

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities-some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the 'ubiquitous sensor network', all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow ('ionics and protonics') and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  3. Chemical switch based reusable dual optoelectronic sensor for nitrite.

    PubMed

    Vishnuvardhan, V; Kala, R; Prasada Rao, T

    2008-08-01

    An optical sensor was developed for sensing of nitrite based on the monotonous decrease in absorbance of Rhodamine 6G at 525 nm (the absorbance maximum of dye) with increasing concentration of nitrite. This sensor also permits naked eye detection. Various parameters like concentrations of sulphuric acid and Rhodamine 6G, response time and stability were varied and optimal conditions are reported. Under these conditions, the developed sensor enables the determination of nitrite in the concentration range 0-12.18 micromol L(-1). The nitrite response is selective as 60-2.5x10(5) fold amounts of several anions and cations have no deleterious effect. The addition of nitrite to Rhodamine 6G dye causes hypsochromic shift from 525 to 385 nm while several other anions like I(-), SCN(-), ClO(4)(-), [HgI(4)](2-) and [Zn (SCN)(4)](2-) showed a bathochromatic shift from 525 to 575 nm. The sequential addition of nitrite and sulphamic to Rhodamine 6G in 0.75 mol L(-1) sulphuric acid solution results in switching of "ON" and "OFF" absorbance. The time elapse and concentration of sulphamic acid required for chemical switching was also established. Similar "ON" and "OFF" switching behaviour was observed in fluorescence studies also. This enabled the design and development of reusable chemical switch based dual optoelectronic sensor, for monitoring of traces of nitrite in environmental and food samples. The plausible mechanism for above switching behaviour is also proposed.

  4. Graphene/MoS2 heterostructures for optoelectronics applications

    NASA Astrophysics Data System (ADS)

    Han, P.; Wong, Q.; El Fatimy, A.; Ishigami, M.; Barbara, P.

    Graphene and other atomically thin materials can be combined to make novel ultra-thin devices that are suitable for flexible substrates. However, fabricating these heterostructures is a challenge. Most previous work was done by stacking monolayers exfoliated from bulk materials , which is a very time-consuming, low-yield method. Large-area monolayer can also be grown by CVD and stacked, as demonstrated by the successful transfer of graphene on as-grown MoS2, yet the optical properties of some materials like MoS2 may be degraded by the processing required to detach them from the growth substrate, thereby limiting options in device architecture. Here we develop a method to transfer, align and stack large flakes and films of MoS2 and graphene after transferring both from the growth substrate onto an arbitrary substrate. The Raman and photoluminescence measurements show that the optical properties of the stacked monolayers are not degraded, making this method viable for fabrication of optoelectronics devices. . Work supported by the U.S. ONR (Award: N000141310865) and the NSF-REU (DMR-1358978).

  5. Enhancement of sun-tracking with optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Wu, Jiunn-Chi

    2015-09-01

    Sun-tracking is one of the most challenging tasks in implementing CPV. In order to justify the additional complexity of sun-tracking, careful assessment of performance of CPV by monitoring the performance of sun-tracking is vital. Measurement of accuracy of sun-tracking is one of the important tasks in an outdoor test. This study examines techniques with three optoelectronic devices (i.e. position sensitive device (PSD), CCD and webcam). Outdoor measurements indicated that during sunny days (global horizontal insolation (GHI) > 700 W/m2), three devices recorded comparable tracking accuracy of 0.16˜0.3°. The method using a PSD has fastest sampling rate and is able to detect the sun's position without additional image processing. Yet, it cannot identify the sunlight effectively during low insolation. The techniques with a CCD and a webcam enhance the accuracy of centroid of sunlight via the optical lens and image processing. The image quality acquired using a webcam and a CCD is comparable but the webcam is more affordable than that of CCD because it can be assembled with consumer-graded products.

  6. 3-D movies using microprocessor-controlled optoelectronic spectacles

    NASA Astrophysics Data System (ADS)

    Jacobs, Ken; Karpf, Ron

    2012-02-01

    Despite rapid advances in technology, 3-D movies are impractical for general movie viewing. A new approach that opens all content for casual 3-D viewing is needed. 3Deeps--advanced microprocessor controlled optoelectronic spectacles--provides such a new approach to 3-D. 3Deeps works on a different principle than other methods for 3-D. 3-D movies typically use the asymmetry of dual images to produce stereopsis, necessitating costly dual-image content, complex formatting and transmission standards, and viewing via a corresponding selection device. In contrast, all 3Deeps requires to view movies in realistic depth is an illumination asymmetry--a controlled difference in optical density between the lenses. When a 2-D movie has been projected for viewing, 3Deeps converts every scene containing lateral motion into realistic 3-D. Put on 3Deeps spectacles for 3-D viewing, or remove them for viewing in 2-D. 3Deeps works for all analogue and digital 2-D content, by any mode of transmission, and for projection screens, digital or analogue monitors. An example using aerial photography is presented. A movie consisting of successive monoscopic aerial photographs appears in realistic 3-D when viewed through 3Deeps spectacles.

  7. New optoelectronic sensor for measuring biologically effective irradiance

    NASA Astrophysics Data System (ADS)

    Kosyachenko, Leonid A.; Sklyarchuk, Valery M.

    1997-12-01

    A new optoelectronic sensor whose spectral responsivity to UV radiation is almost identical with that of the human skin or of the eyes is presented. The sensor comprises two closely-spaced UV-sensitive Au-SiC diode, one of which is fitted with a glass filter. The photodiodes are connected to electronics that amplifies, combines and subtracts electrical signals generated by radiation in the photodiodes. The responsivity of the Au-SiC diode structure with a semitransparent gold electrode covers the whole UV spectrum, with the long-wavelength end bounded by the semiconductor bandgap. The photodiode with a filter absorbing wavelengths shorter than 315-320 nm is responsive in the UV-A region, while the difference between the electrical signals generated in the filter-containing and filter-free diodes is determined by the UV-B + IV-C radiation. The measuring of biologically effective radiation over the entire UV spectral range is achieved through combining the signal generated by UV-A radiation and the previously amplified difference signal generated by UV-B + UV-C radiation. The sensor spectral responsivity thus obtained is very close to the tabular curve of the relative spectral effectiveness of UV radiation on the normal human skin or eyes.

  8. Organic non-linear optics and opto-electronics

    NASA Astrophysics Data System (ADS)

    Maldonado, J. L.; Ramos-Ortíz, G.; Rodríguez, M.; Meneses-Nava, M. A.; Barbosa-García, O.; Santillán, R.; Farfán, N.

    2010-12-01

    π-conjugated organic molecules and polymers are of great importance in physics, chemistry, material science and engineering. It is expected that, in the near future, organic materials will find widespread use in many technological applications. In the case of organic opto-electronic systems, the list of devices includes light emitting diodes (OLEDs), photovoltaic cells (OPVs), field-effect transistors (OFET), photorefractive materials for light manipulation, among others. These materials are also used for photonic applications: all-optical switching, modulators, optical correlators, plastic waveguides, all polymeric integrated circuits, solid-state lasers, and for biophotonic applications as in the case of the development of organic labels for multiphoton microscopy and photodynamic therapy. The advances in the developing of organic compounds with better mechanical, electrical, and optical (linear and non-linear) characteristics are of a great importance for this field. Here, we present the research on this area carried out at the Centro de Investigaciones en Óp-tica (CIO), in collaboration with Chemistry Departments of different institutions. This work focuses on the optical characterization of materials through several techniques such as TOF, FWM, TBC, THG Maker Fringes, HRS, Z-scan, and TPEF. Additionally, some applications, such as dynamic holography by using photorefractive polymers, and OPVs cells will be discussed.

  9. Transition-metal dichalcogenide-based dipolariton optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Kolmakov, German; Byrnes, Tim; He, Andy; Kezerashvili, Roman Ya.

    Using computational modeling, we simulate the dynamics of dipolaritons in an optical microcavity, which encompasses the transition-metal dichalcogenide double-layer structure. We demonstrate that dipolaritons, a three-way superposition of photons, direct excitons and indirect excitons, are guided by a pattern deposited on the microcavity and can be driven by an external electric field or voltage applied to the structure. Focusing on a normal dipolariton gas in Y- and Psi-shaped patterns, we isolate conditions when the dipolariton flow can be switched between the channel branches of the pattern by the electric field. We also studied the superfluid dynamics of dipolariton Bose-Einstein condensates in patterned substrates at low temperatures, showing that the condensate in the channels can be accelerated and then directed by the electric field. We compare the obtained results with those for GaAs-based microcavities and demonstrate that dipolaritons in transition-metal dichalcogenide-based microcavities can be utilized for the design of optical switches and transistors for optoelectronic integrated circuits.

  10. Optoelectronic Instrument Monitors pH in a Culture Medium

    NASA Technical Reports Server (NTRS)

    Anderson, Melody M.; Pellis, Neal; Jeevarajan, Anthony S.; Taylor, Thomas D.

    2004-01-01

    An optoelectronic instrument monitors the pH of an aqueous cell-culture medium in a perfused rotating-wall-vessel bioreactor. The instrument is designed to satisfy the following requirements: It should be able to measure the pH of the medium continuously with an accuracy of 0.1 in the range from 6.5 to 7.5. It should be noninvasive. Any material in contact with the culture medium should be sterilizable as well as nontoxic to the cells to be grown in the medium. The biofilm that inevitably grows on any surface in contact with the medium should not affect the accuracy of the pH measurement. It should be possible to obtain accurate measurements after only one calibration performed prior to a bioreactor cell run. The instrument should be small and lightweight. The instrument includes a quartz cuvette through which the culture medium flows as it is circulated through the bioreactor. The cuvette is sandwiched between light source on one side and a photodetector on the other side. The light source comprises a red and a green light-emitting diode (LED) that are repeatedly flashed in alternation with a cycle time of 5 s. The responses of the photodiode to the green and red LEDs are processed electronically to obtain a quantity proportional to the ratio between the amounts of green and red light transmitted through the medium.

  11. Research on optoelectronic technology for detecting rifling of artillery online

    NASA Astrophysics Data System (ADS)

    Ma, Hong; Che, Ying; Shen, Yuzhi; Bai, Baoxing

    1996-10-01

    In this report, an optoelectronics instrument is introduced, in which the technology of laser alignment, the technology of computer image identification, and the principle of optical triangulation are used to inspect the contour and the internal surface quality of rifling in artillery barrel with real-time and automatically. This instrument is composed of laser aligning system, optical triangulation system, CCD camera system, computer image processing and identification system and computer-controlled system, the photoelectric targets of the caliber gauging system, of the CCD camera system and of laser aligning system, are all fixed in the chamber of the cutter of the boring tool, and they compose the photoelectric probe. When the boring tool bores the barrel, the light coming from the semiconductor laser which is located in the photoelectric probe, is reflected by the internal surface of the barrel and then received by 1D CCD. By the aid of optical triangulation operation, the radius of the rifling can be obtained, in the mean time, the image information of internal surface of the barrel, which is obtained by CCD is fed to be processed by computer image processing and identification system, and then the classified results can be given. The magnitude of deviation of the boring cutter from its ideal boring line, is provided by the laser aligning system with real time, the feedback system can revise the position of the boring tool whenever necessary. The caliber gauging precision of this instrument is +/- 0.005mm.

  12. Study of optoelectronic switch for satellite-switched time-division multiple access

    NASA Technical Reports Server (NTRS)

    Su, Shing-Fong; Jou, Liz; Lenart, Joe

    1987-01-01

    The use of optoelectronic switching for satellite switched time division multiple access will improve the isolation and reduce the crosstalk of an IF switch matrix. The results are presented of a study on optoelectronic switching. Tasks include literature search, system requirements study, candidate switching architecture analysis, and switch model optimization. The results show that the power divided and crossbar switching architectures are good candidates for an IF switch matrix.

  13. Chip scale low dimensional materials: optoelectronics & nonlinear optics

    NASA Astrophysics Data System (ADS)

    Gu, Tingyi

    The CMOS foundry infrastructure enables integration of high density, high performance optical transceivers. We developed integrated devices that assemble resonators, waveguide, tapered couplers, pn junction and electrodes. Not only the volume standard manufacture in silicon foundry is promising to low-lost optical components operating at IR and mid-IR range, it also provides a robust platform for revealing new physical phenomenon. The thesis starts from comparison between photonic crystal and micro-ring resonators based on chip routers, showing photonic crystal switches have small footprint, consume low operation power, but its higher linear loss may require extra energy for signal amplification. Different designs are employed in their implementation in optical signal routing on chip. The second part of chapter 2 reviews the graphene based optoelectronic devices, such as modulators, lasers, switches and detectors, potential for group IV optoelectronic integrated circuits (OEIC). In chapter 3, the highly efficient thermal optic control could act as on-chip switches and (transmittance) tunable filters. Local temperature tuning compensates the wavelength differences between two resonances, and separate electrode is used for fine tuning of optical pathways between two resonators. In frequency domain, the two cavity system also serves as an optical analogue of Autler-Towns splitting, where the cavity-cavity resonance detuning is controlled by the length of pathway (phase) between them. The high thermal sensitivity of cavity resonance also effectively reflects the heat distribution around the nanoheaters, and thus derives the thermal conductivity in the planar porous suspended silicon membrane. Chapter 4 & 5 analyze graphene-silicon photonic crystal cavities with high Q and small mode volume. With negligible nonlinear response to the milliwatt laser excitation, the monolithic silicon PhC turns into highly nonlinear after transferring the single layer graphene with

  14. Atomic Clock Based on Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Yu, Nan

    2005-01-01

    A proposed highly accurate clock or oscillator would be based on the concept of an opto-electronic oscillator (OEO) stabilized to an atomic transition. Opto-electronic oscillators, which have been described in a number of prior NASA Tech Briefs articles, generate signals at frequencies in the gigahertz range characterized by high spectral purity but not by longterm stability or accuracy. On the other hand, the signals generated by previously developed atomic clocks are characterized by long-term stability and accuracy but not by spectral purity. The proposed atomic clock would provide high spectral purity plus long-term stability and accuracy a combination of characteristics needed to realize advanced developments in communications and navigation. In addition, it should be possible to miniaturize the proposed atomic clock. When a laser beam is modulated by a microwave signal and applied to a photodetector, the electrical output of the photodetector includes a component at the microwave frequency. In atomic clocks of a type known as Raman clocks or coherent-population-trapping (CPT) clocks, microwave outputs are obtained from laser beams modulated, in each case, to create two sidebands that differ in frequency by the amount of a hyperfine transition in the ground state of atoms of an element in vapor form in a cell. The combination of these sidebands produces a transparency in the population of a higher electronic level that can be reached from either of the two ground-state hyperfine levels by absorption of a photon. The beam is transmitted through the vapor to a photodetector. The components of light scattered or transmitted by the atoms in the two hyperfine levels mix in the photodetector and thereby give rise to a signal at the hyperfine- transition frequency. The proposed atomic clock would include an OEO and a rubidium- or cesium- vapor cell operating in the CPT/Raman regime (see figure). In the OEO portion of this atomic clock, as in a typical prior OEO, a

  15. Thin film technologies for optoelectronic components in fiber optic communication

    NASA Astrophysics Data System (ADS)

    Perinati, Agostino

    1998-02-01

    will grow at an annual average rate of 22 percent from 1.3 million fiber-km in 1995 to 3.5 million fiber-km in 2000. The worldwide components market-cable, transceivers and connectors - 6.1 billion in 1994, is forecasted to grow and show a 19 percent combined annual growth rate through the year 2000 when is predicted to reach 17.38 billion. Fiber-in-the-loop and widespread use of switched digital services will dominate this scenario being the fiber the best medium for transmitting multimedia services. As long as communication will partially replace transportation, multimedia services will push forward technology for systems and related components not only for higher performances but for lower cost too in order to get the consumers wanting to buy the new services. In the long distance transmission area (trunk network) higher integration of electronic and optoelectronic functions are required for transmitter and receiver in order to allow for higher system speed, moving from 2.5 Gb/s to 5, 10, 40 Gb/s; narrow band wavelength division multiplexing (WDM) filters are required for higher transmission capacity through multiwavelength technique and for optical amplifier. In the access area (distribution network) passive components as splitters, couplers, filters are needed together with optical amplifiers and transceivers for point-to-multipoint optical signal distribution: main issue in this area is the total cost to be paid by the customer for basic and new services. Multimedia services evolution, through fiber to the home and to the desktop approach, will be mainly affected by the availability of technologies suitable for component consistent integration, high yield manufacturing processes and final low cost. In this paper some of the optoelectronic components and related thin film technologies expected to mainly affect the fiber optic transmission evolution, either for long distance telecommunication systems or for subscriber network, are presented.

  16. Strain-tuned optoelectronic properties of hollow gallium sulphide microspheres

    NASA Astrophysics Data System (ADS)

    Zhang, Yin; Chen, Chen; Liang, C. Y.; Liu, Z. W.; Li, Y. S.; Che, Renchao

    2015-10-01

    Sulfide semiconductors have attracted considerable attention. The main challenge is to prepare materials with a designable morphology, a controllable band structure and optoelectronic properties. Herein, we report a facile chemical transportation reaction for the synthesis of Ga2S3 microspheres with novel hollow morphologies and partially filled volumes. Even without any extrinsic dopant, photoluminescence (PL) emission wavelength could be facilely tuned from 635 to 665 nm, depending on its intrinsic inhomogeneous strain distribution. Geometric phase analysis (GPA) based on high-resolution transmission electron microscopy (HRTEM) imaging reveals that the strain distribution and the associated PL properties can be accurately controlled by changing the growth temperature gradient, which depends on the distance between the boats used for raw material evaporation and microsphere deposition. The stacking-fault density, lattice distortion degree and strain distribution at the shell interfacial region of the Ga2S3 microspheres could be readily adjusted. Ab initio first-principles calculations confirm that the lowest conductive band (LCB) is dominated by S-3s and Ga-4p states, which shift to the low-energy band as a result of the introduction of tensile strain, well in accordance with the observed PL evolution. Therefore, based on our strain driving strategy, novel guidelines toward the reasonable design of sulfide semiconductors with tunable photoluminescence properties are proposed.Sulfide semiconductors have attracted considerable attention. The main challenge is to prepare materials with a designable morphology, a controllable band structure and optoelectronic properties. Herein, we report a facile chemical transportation reaction for the synthesis of Ga2S3 microspheres with novel hollow morphologies and partially filled volumes. Even without any extrinsic dopant, photoluminescence (PL) emission wavelength could be facilely tuned from 635 to 665 nm, depending on its

  17. Average energy gap of AIBIIIC2VI optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Kumar, Virendra; Chandra, Dinesh

    1991-03-01

    (In this paper we propose a model based on plasma oscillations theory of solids for the calculatio f th average energy gap of optoelectronic materials having A B-''- 1C2 chalcopyrite stru eture. In the present calculation special care of delectrons in the case of noble and transition metal compounds has been taken into account. Our calculated values are in excellent agreement with the reported values). The dielectric theory of Phillips1 Van Vechten2''3 and Levine has been widely used in a varity of physicochemical problems relating to crystal structures nonlinear optical susceptibilit ies dielectric constant cohesive energies heats of formation average energy gaps etc. Using the concept of these theories the author 5 has recently developed a model based on plasma oscill ations theory of solids for the calculation of the covalent (Eh)afld ionic (C) energy gaps of several semiconductors having different crystal structures. . In the present paper we extend the calculation of the average energy gap in the case of AIBIIIC2VI semiconductors. The expressons for the Eh and C in terms of plasmon energy can be written as7 Eh K1 (tw)L6533 eV (1) C K2b (!iw)2" ex [ K3(hw)" 3 ] eV . (2) If delectrons are present in the crystal following relationhas been developed for the ionic energy gap while the covalent energy gap remains the same. C Kb (w)2" exp [K5 (''hw) (hw)2" 3J eV () where K''s

  18. Development of optoelectronic monitoring system for ear arterial pressure waveforms

    NASA Astrophysics Data System (ADS)

    Sasayama, Satoshi; Imachi, Yu; Yagi, Tamotsu; Imachi, Kou; Ono, Toshirou; Man-i, Masando

    1994-02-01

    Invasive intra-arterial blood pressure measurement is the most accurate method but not practical if the subject is in motion. The apparatus developed by Wesseling et al., based on a volume-clamp method of Penaz (Finapres), is able to monitor continuous finger arterial pressure waveforms noninvasively. The limitation of Finapres is the difficulty in measuring the pressure of a subject during work that involves finger or arm action. Because the Finapres detector is attached to subject's finger, the measurements are affected by inertia of blood and hydrostatic effect cause by arm or finger motion. To overcome this problem, the authors made a detector that is attached to subject's ear and developed and optoelectronic monitoring systems for ear arterial pressure waveform (Earpres). An IR LEDs, photodiode, and air cuff comprised the detector. The detector was attached to a subject's ear, and the space adjusted between the air cuff and the rubber plate on which the LED and photodiode were positioned. To evaluate the accuracy of Earpres, the following tests were conducted with participation of 10 healthy male volunteers. The subjects rested for about five minutes, then performed standing and squatting exercises to provide wide ranges of systolic and diastolic arterial pressure. Intra- and inter-individual standard errors were calculated according to the method of van Egmond et al. As a result, average, the averages of intra-individual standard errors for earpres appeared small (3.7 and 2.7 mmHg for systolic and diastolic pressure respectively). The inter-individual standard errors for Earpres were about the same was Finapres for both systolic and diastolic pressure. The results showed the ear monitor was reliable in measuring arterial blood pressure waveforms and might be applicable to various fields such as sports medicine and ergonomics.

  19. Adhesion of functional layer on polymeric substrates for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Amendola, E.; Cammarano, A.; Pezzuto, M.; Acierno, D.

    2009-06-01

    The use of plastic film substrates for organic electronic devices promises to enable new applications, such as flexible displays. Plastic substrates have several distinct advantages, such as ruggedness, robustness, ultra lightness, conformability and impact resistance over glass substrates, which are primarily used in flat panel displays (FPDs) today. However, high transparency, proper surface roughness, low gas permeability and high transparent electrode conductivity of the plastic substrate are required for commercial applications. Polyesters, both amorphous and semicrystalline, are a promising class of commercial polymer for optoelectronic applications. Surface modification of polyester films was performed via chemical solution determining hydrolysis or oxidation. Hydrolysis was carried out by means of sodium hydroxide solution and oxidation by using standard clean 1 (SC-1) of RCA procedure [1]. For this work we have used commercial polymer films of 100μm in thickness: AryLite [2], supplied by Ferrania Imaging Technologies S.p.A. and characterised by very high glass transition temperature, Mylar (Polyethylene Terephthalate PET) and Teonex (Polyethylene Naphthalate PEN) both supplied by Dupont. More over, a bioriented and semicrystalline PET have been used. The aim of this study is modifying the polymer surface to improve the adhesion between organic-inorganic layer. It was found that the NaOH and SC-1 treatment cause a decrease of contact angles. In the present study we have deposited a thin films of amorphous hydrogenated silicon (a-Si:H) and its oxide (SiO2) on a new high temperature polymer substrate, AryLite, by plasma enhanced chemical vapour deposition (PECVD) [3], with a radio frequency plasma system.

  20. Optoelectronic blood oximetry as a tool of health safety monitoring

    NASA Astrophysics Data System (ADS)

    Cysewska-Sobusiak, Anna

    2001-08-01

    A metrological approach of some selected problems connected with the significant field of biomedical optics i.e., monitoring of arterial blood oxygenation by use of the tissues as optical media exposed to the controlled light action, has been presented. The subject of the measurements based on utilization of the selection absorption properties of blood is the hemoglobin oxygen saturation. Using optoelectronic sensing allows to convert sophisticated effects of noninvasive light-living tissue interaction to electrical signals which may be convenient to measure. Pulse oximetry which is based upon such a way of sensing and processing, is the recent advance in noninvasive oximetry. The unique advantages of that marvelous diagnostic technique have caused to recommend pulse oximeters as standard equipment in intensive care and other critical situations impending hypoxemia appearance. However, end-users of the pulse oximeters not always are aware of that these devices fall under specific limitations, of both physiological and technical nature. The author of this paper is a metrologist and deals mainly with various interdisciplinary problems of a measurement reliability including the aspects such as uncertainty of an outcome accessible to the user, causes affecting sensitivity, resolution and repeatability of processing function, and response time and stability of results. Referring to the subject discussed herein, and taking into account some open questions, the author's contribution is her own experience in modeling as well as in in vivo measuring of transilluminated living objects. A proposed novel use of the known pulse oximetry concept may be considered as complementary results against a general review background of the achievements obtained in oximetry as the state-of-the-art, and furthermore, the developing studies which are still in progress.

  1. Image processing for a high-resolution optoelectronic retinal prosthesis.

    PubMed

    Asher, Alon; Segal, William A; Baccus, Stephen A; Yaroslavsky, Leonid P; Palanker, Daniel V

    2007-06-01

    In an effort to restore visual perception in retinal diseases such as age-related macular degeneration or retinitis pigmentosa, a design was recently presented for a high-resolution optoelectronic retinal prosthesis having thousands of electrodes. This system requires real-time image processing fast enough to convert a video stream of images into electrical stimulus patterns that can be properly interpreted by the brain. Here, we present image-processing and tracking algorithms for a subretinal implant designed to stimulate the second neuron in the visual pathway, bypassing the degenerated first synaptic layer. For this task, we have developed and implemented: 1) A tracking algorithm that determines the implant's position in each frame. 2) Image cropping outside of the implant boundaries. 3) A geometrical transformation that distorts the image appropriate to the geometry of the fovea. 4) Spatio-temporal image filtering to reproduce the visual processing normally occurring in photoceptors and at the photoreceptor-bipolar cell synapse. 5) Conversion of the filtered visual information into a pattern of electrical current. Methods to accelerate real-time transformations include the exploitation of data redundancy in the time domain, and the use of precomputed lookup tables that are adjustable to retinal physiology and allow flexible control of stimulation parameters. A software implementation of these algorithms processes natural visual scenes with sufficient speed for real-time operation. This computationally efficient algorithm resembles, in some aspects, biological strategies of efficient coding in the retina and could provide a refresh rate higher than fifty frames per second on our system.

  2. International Conference on Optoelectronic Science and Engineering '90, Beijing, People's Republic of China, Aug. 22-25, 1990, Proceedings

    NASA Astrophysics Data System (ADS)

    Wang, Da-Heng

    1990-07-01

    Recent advances in optoelectronic technology are discussed, with an emphasis on developments in the People's Republic of China. Sections are devoted to new optoelectronic, electrooptic, acoustooptic, and magnetooptic devices and modulators; intelligent optoelectronic sensors; optoelectronic test and analysis equipment; lasers and their applications; IR optics and low-light-level technology; and fiber-optic devices. Also considered are photovoltaic technology and solar-energy systems, hybrid systems for image processing, optical-disk information storage and retrieval, optical bistability and optical computing, pattern recognition and robot vision, and the application of artificial intelligence to optical equipment. Diagrams, drawings, graphs, and sample images are provided.

  3. Solution processed semiconductor alloy nanowire arrays for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Shimpi, Paresh R.

    NBE UV emission, indicating significantly enhanced inter-diffusion of Mg into ZnO nanowires in this oxygen-rich environment. The successfully developed solution process for semiconductor nanowires alloying has few advantages in low cost, large yield, environmental friendliness and low reaction temperature. This solution processed ZnMgO nanowire arrays could provide a new class of nanoscale building blocks for various optoelectronic devices in UV lighting and visible solar energy harvesting.

  4. Computational design of surfaces, nanostructures and optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Choudhary, Kamal

    Properties of engineering materials are generally influenced by defects such as point defects (vacancies, interstitials, substitutional defects), line defects (dislocations), planar defects (grain boundaries, free surfaces/nanostructures, interfaces, stacking faults) and volume defects (voids). Classical physics based molecular dynamics and quantum physics based density functional theory can be useful in designing materials with controlled defect properties. In this thesis, empirical potential based molecular dynamics was used to study the surface modification of polymers due to energetic polyatomic ion, thermodynamics and mechanics of metal-ceramic interfaces and nanostructures, while density functional theory was used to screen substituents in optoelectronic materials. Firstly, polyatomic ion-beams were deposited on polymer surfaces and the resulting chemical modifications of the surface were examined. In particular, S, SC and SH were deposited on amorphous polystyrene (PS), and C2H, CH3, and C3H5 were deposited on amorphous poly (methyl methacrylate) (PMMA) using molecular dynamics simulations with classical reactive empirical many-body (REBO) potentials. The objective of this work was to elucidate the mechanisms by which the polymer surface modification took place. The results of the work could be used in tailoring the incident energy and/or constituents of ion beam for obtaining a particular chemistry inside the polymer surface. Secondly, a new Al-O-N empirical potential was developed within the charge optimized many body (COMB) formalism. This potential was then used to examine the thermodynamic stability of interfaces and mechanical properties of nanostructures composed of aluminum, its oxide and its nitride. The potentials were tested for these materials based on surface energies, defect energies, bulk phase stability, the mechanical properties of the most stable bulk phase, its phonon properties as well as with a genetic algorithm based evolution theory of

  5. Optoelectronic Tool Adds Scale Marks to Photographic Images

    NASA Technical Reports Server (NTRS)

    Stevenson, Charlie; Rivera, Jorge; Youngquist, Robert; Cox, Robert; Haskell, William

    2003-01-01

    A simple, easy-to-use optoelectronic tool projects scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The role played by the scale marks projected by this tool is the same as that of the scale marks on a ruler placed in a scene for the purpose of establishing a length scale. However, this tool offers the advantage that it can put scale marks quickly and safely in any visible location, including a location in which placement of a ruler would be difficult, unsafe, or time-consuming. The tool (see Figure 1) includes an aluminum housing, within which are mounted four laser diodes that operate at a wavelength of 670 nm. The laser diodes are spaced 1 in. (2.54 cm) apart along a baseline. The laser diodes are mounted with setscrews, which are used to adjust their beams to make them all parallel to each other and perpendicular to the baseline. During the adjustment process, the effect of the adjustments is observed by measuring the positions of the laser-beam spots on a target 80 ft (approx.24 m) away. Once the adjustments have been completed, the laser beams define three 1-in. (2.54-cm) intervals and the location of each beam is defined to within 1/16 in. (approx.1.6 mm) at any target distance out to about 80 ft (approx.24 m). The distance between the laser-beam spots as seen in an image is strictly defined only along an axis parallel to the baseline and perpendicular to the laser beam (also perpendicular to the line of sight of the camera, assuming that the camera-to-target distance is much greater than the distance between the tool and the camera lens). If a flat target surface illuminated by the laser beams is tilted with respect to the aforesaid axis, then the distance along the target surface between scale marks is proportional to the secant of the tilt angle. If one knows the tilt angle, one can correct for it. Even

  6. Nonlinear Optics in Optoelectronic Integration with Some Novel Waveguide Devices.

    NASA Astrophysics Data System (ADS)

    Vakhshoori, Daryoosh

    lasers in the Cassette Disk (CD) players, laser printers, magneto-optic memories, bar-code reading and other applications. These and other applications have a larger potential market for optical and opto-electronic systems; however. (Abstract shortened with permission of author.).

  7. Photonic crystal cavities for spectrally-selective optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Yang, Hongjun

    Photonic crystal (PC) structures exhibit unconventional dispersion and refractive properties making possible hitherto not realizable optical and optoelectronic devices with high spectral selectivity. Functional PC devices (e.g., optical filters, reflectors, and photo detectors and light emitters) on both Si and III-V semiconductor material systems were fabricated via E-Beam lithography (EBL). The device layer can be further transferred onto foreign substrates such as glass or plastic (PET), using a low-cost "wet nanomembrane transfer technique" developed in this study. The broadband membrane reflectors (MR) based on Fano resonances in patterned silicon nanomembranes have been demonstrated. Resonance control of the reflectors was realized either by partially removing buried oxide layer underneath the device layer, or by controlled SiO2 film deposition on the top of the devices. Both blue- and red-shifts were demonstrated with a turning range of 50 nm for a center wavelength at 1550 nm. These results demonstrate practical post-process means for Fano resonance engineering for both narrow band filters and ultra-compact broadband reflectors. An optically pumped resonance cavity light emitting device (RCLED) with Si based membrane reflectors (MR) has been demonstrated experimentally. The stimulated cavity mode at 1545 nm was observed at room temperature with a pulsed green pumping laser light source. We observed significant spectral narrowing in RCLEDs with linewidth reduced from 50 nm down to <4 nm, owing to the presence of top and bottom MR reflectors. The measured photoluminescence efficiency also increased by a factor of 100 in RCLEDs, as compared to the value measured from as-grown InGaAsP QW structures on InP substrate. The mode shifts were also investigated over different temperatures and different pumping power levels. An InGaAsP QW LED array device was also fabricated and transferred onto flexible PET substrate. The devices showed very good electrical and

  8. Nonlinear optical and optoelectronic studies of topological insulator surfaces

    NASA Astrophysics Data System (ADS)

    McIver, James W.

    Since their experimental discovery in 2008, topological insulators have been catapulted to the forefront of condensed matter physics research owing to their potential to realize both exciting new technologies as well as novel electronic phases that are inaccessible in any other material class. Their exotic properties arise from a rare quantum organization of its electrons called "topological order,'' which evades the conventional broken symmetry based-classification scheme used to categorize nearly every other state of ordered matter. Instead, topologically ordered phases are classified by topological invariants, which characterize the phase of an electron's wavefunction as it moves through momentum space. When a topologically ordered phase is interfaced with an ordinary phase, such as the vacuum, a novel metallic state appears at their shared boundary. In topological insulators, this results in the formation of a two-dimensional metallic state that spans all of its surfaces. The surface state electronic spectrum is characterized by a single linearly dispersing and helically spin-polarized Dirac cone that is robust against disorder. The helical nature of the surface Dirac cone is highly novel because the Dirac electrons carry a net magnetic moment and are capable of transporting 100% spin-polarized electrical currents, which are the long-sought electronic properties needed for many spin-based electronic applications. However, owing to the small bulk band gap and intrinsic electronic doping inherent to these materials, isolating the surface electronic response from the bulk has proven to be a major experimental obstacle. In this thesis, we demonstrate the means by which light can be used to isolate and study the surface electronic response of topological insulators using optoelectronic and nonlinear optical techniques. In chapter 1, we overview the physics of topological order and topological insulators. In chapter 2, we show how polarized light can be used to

  9. Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

    SciTech Connect

    Tripathi, Madhvendra Nath

    2015-06-24

    Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In{sub 32-x}Sn{sub x}O{sub 48+x/2}; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom of conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.

  10. Highly conductive transparent organic electrodes with multilayer structures for rigid and flexible optoelectronics.

    PubMed

    Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

    2015-05-27

    Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric-metal-dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq(-1) at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices.

  11. Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

    NASA Astrophysics Data System (ADS)

    Congxin, Xia; Jingbo, Li

    2016-05-01

    Since two-dimensional (2D) graphene was fabricated successfully, many kinds of graphene-like 2D materials have attracted extensive attention. Among them, the studies of 2D metal chalcogenides have become the focus of intense research due to their unique physical properties and promising applications. Here, we review significant recent advances in optoelectronic properties and applications of 2D metal chalcogenides. This review highlights the recent progress of synthesis, characterization and isolation of single and few layer metal chalcogenides nanosheets. Moreover, we also focus on the recent important progress of electronic, optical properties and optoelectronic devices of 2D metal chalcogenides. Additionally, the theoretical model and understanding on the band structures, optical properties and related physical mechanism are also reviewed. Finally, we give some personal perspectives on potential research problems in the optoelectronic characteristics of 2D metal chalcogenides and related device applications.

  12. Microstructure and optoelectronic properties of galliumtitanium-zinc oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Shou-bu; Lu, Zhou; Zhong, Zhi-you; Long, Hao; Gu, Jin-hua; Long, Lu

    2016-07-01

    Gallium-titanium-zinc oxide (GTZO) transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.

  13. Light-driven strong spin valve effects in an azobenzene-based spin optoelectronic device

    NASA Astrophysics Data System (ADS)

    Zeng, Jing; Chen, Ke-Qiu; Deng, Xiaohui; Long, Mengqiu

    2016-10-01

    A photoswitched single-molecule junction, a stable and reversible single-molecule electrical switch, has been successfully prepared by means of molecular engineering (2016 Science 352 1443). In this work we use a first-principles computational approach to investigate the spin valve effect of an azobenzene-based spin optoelectronic device. Our results demonstrate that the magnetoresistive ratio of the spin optoelectronic device is only about 65% when the azobenzene is in cis configuration, which is a low performance for practical applications. However, the magnetoresistive ratio of the device can be enhanced to about 2775% when the cis configuration of the azobenzene is changed into the trans configuration by applying a pulse of light. As a consequence, photoexcitation provides an effective way to obtain a high-performance spin optoelectronic device.

  14. A new switching parameter varying optoelectronic delayed feedback model with computer simulation.

    PubMed

    Liu, Lingfeng; Miao, Suoxia; Cheng, Mengfan; Gao, Xiaojing

    2016-01-01

    In this paper, a new switching parameter varying optoelectronic delayed feedback model is proposed and analyzed by computer simulation. This model is switching between two parameter varying optoelectronic delayed feedback models based on chaotic pseudorandom sequences. Complexity performance results show that this model has a high complexity compared to the original model. Furthermore, this model can conceal the time delay effectively against the auto-correlation function, delayed mutual information and permutation information analysis methods, and can extent the key space, which greatly improve its security. PMID:26923101

  15. Hybrid nanostructures using pi-conjugated polymers and nanoscale metals: synthesis, characteristics, and optoelectronic applications.

    PubMed

    Park, Dong Hyuk; Kim, Mi Suk; Joo, Jinsoo

    2010-07-01

    Pi-conjugated organic systems have been used as optoelectronic and sensing materials due to their characteristics of efficient light emission or absorption, and p-type charge transport. The hybrid nanostructures of pi-conjugated organic systems with nanoscale metals offer surface plasmon (SP)-enhanced luminescence, which can be applied to organic-based optoelectronics, photonics, and sensing. Various hybrid nanostructures using light-emitting polymers with nanoscale metals have been fabricated and have shown considerable enhancement of photoluminescence efficiency due to energy and charge transfer effects in SP resonance coupling. In this tutorial review, recent conceptual and technological achievements in light-emitting polymers-based hybrid nanostructures are described.

  16. The studying of solar cell process by using optoelectronic measurement system

    NASA Astrophysics Data System (ADS)

    Wang, Hongfang; Lang, Fang; Shi, Jinchao; Li, Gaofei; Hu, Zhiyan; Xiong, Jingfeng

    2013-12-01

    For the optical anti-reflection coating (ARC) and passivation properties, the relationship between parameters of PECVD and solar cell photoelectricity properties is investigated in this work. Solar cell's photoelectricity properties are studied by using various optoelectronic measurement systems. It is found that minority carrier recombination can be reduced by changing the parameters of PECVD, specially tuning pressure parameter, and the hydrogen content is different as the gas total flow changing if the temperature and pressure no changes. And also the hydrogen content can be calculated by absorption spectrum being tested with optoelectronic measurement system.

  17. Commercialization issues and funding opportunities for high-performance optoelectronic computing modules

    NASA Astrophysics Data System (ADS)

    Hessenbruch, John M.; Guilfoyle, Peter S.

    1997-01-01

    Low power, optoelectronic integrated circuits are being developed for high speed switching and data processing applications. These high performance optoelectronic computing modules consist of three primary components: vertical cavity surface emitting lasers, diffractive optical interconnect elements, and detector/amplifier/laser driver arrays. Following the design and fabrication of an HPOC module prototype, selected commercial funding sources will be evaluated to support a product development stage. These include the formation of a strategic alliance with one or more microprocessor or telecommunications vendors, and/or equity investment from one or more venture capital firms.

  18. Design and construction of the high-speed optoelectronic memory system demonstrator.

    PubMed

    Barbieri, Roberto; Benabes, Philippe; Bierhoff, Thomas; Caswell, Josh J; Gauthier, Alain; Jahns, Jürgen; Jarczynski, Manfred; Lukowicz, Paul; Oksman, Jacques; Russell, Gordon A; Schrage, Jürgen; Snowdon, John F; Stübbe, Oliver; Troster, Gerhard; Wirz, Marco

    2008-07-01

    The high-speed optoelectronic memory system project is concerned with the reduction of latency within multiprocessor computer systems (a key problem) by the use of optoelectronics and associated packaging technologies. System demonstrators have been constructed to enable the evaluation of the technologies in terms of manufacturability. The system combines fiber, free space, and planar integrated optical waveguide technologies to augment the electronic memory and the processor components. Modeling and simulation techniques were developed toward the analysis and design of board-integrated waveguide transmission characteristics and optical interfacing. We describe the fabrication, assembly, and simulation of the major components within the system.

  19. Introduction to Organic Vapor Phase Deposition (OVPDⓇ) Technology for Organic (Opto-)electronics

    NASA Astrophysics Data System (ADS)

    Keiper, Dietmar; Meyer, Nico; Heuken, Michael

    In this chapter, the organic vapor phase deposition (OVPDⓇ) technology combined with the Close Coupled Showerhead (CCS) technology for the fabrication of sophisticated opto-electronic organic devices based on open literature will be shortly reviewed. Typically, organic (opto-)electronic devices are fabricated by vacuum thermal evaporation (VTE), which is in contrast with the OVPDⓇ technology. The deposition of single organic films, the morphology control by OVPD and the proposed benefits of mixing organic materials, and applying non-sharp interfaces for the overall organic light emitting diode (OLED) performance will be discussed.

  20. Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems

    NASA Astrophysics Data System (ADS)

    Otsuji, Taiichi; Sugawara, Kenta; Tamamushi, Gen; Dobroiu, Adrian; Suemitsu, Tetsuya; Ryzhii, Victor; Iwatsuki, Katsumi; Kuwano, Shigeru; Kani, Jun-ichi; Terada, Jun

    2016-02-01

    This paper reviews advances in sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. Graphene-channel field effect transistors (G-FETs) and InP-based high electron mobility transistors (inP-HEMT) are experimentally examined as photonic frequency converters. Optoelectronic properties and three-terminal functionalities of the G-FETs and InP-HEMTs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A single transistor can photomix the optical subcarriers to generate LO and mix down the RF data on the sub-THz carrier to the IF band.

  1. A new switching parameter varying optoelectronic delayed feedback model with computer simulation

    PubMed Central

    Liu, Lingfeng; Miao, Suoxia; Cheng, Mengfan; Gao, Xiaojing

    2016-01-01

    In this paper, a new switching parameter varying optoelectronic delayed feedback model is proposed and analyzed by computer simulation. This model is switching between two parameter varying optoelectronic delayed feedback models based on chaotic pseudorandom sequences. Complexity performance results show that this model has a high complexity compared to the original model. Furthermore, this model can conceal the time delay effectively against the auto-correlation function, delayed mutual information and permutation information analysis methods, and can extent the key space, which greatly improve its security. PMID:26923101

  2. Advanced organic optoelectronic materials: harnessing excited-state intramolecular proton transfer (ESIPT) process.

    PubMed

    Kwon, Ji Eon; Park, Soo Young

    2011-08-23

    Recently, organic fluorescent molecules harnessing the excited-state intramolecular proton transfer (ESIPT) process are drawing great attention due to their unique photophysical properties which facilitate novel optoelectronic applications. After a brief introduction to the ESIPT process and related photo-physical properties, molecular design strategies towards tailored emission are discussed in relation to their theoretical aspects. Subsequently, recent studies on advanced ESIPT molecules and their optoelectronic applications are surveyed, particularly focusing on chemical sensors, fluorescence imaging, proton transfer lasers, and organic light-emitting diodes (OLEDs).

  3. A new switching parameter varying optoelectronic delayed feedback model with computer simulation

    NASA Astrophysics Data System (ADS)

    Liu, Lingfeng; Miao, Suoxia; Cheng, Mengfan; Gao, Xiaojing

    2016-02-01

    In this paper, a new switching parameter varying optoelectronic delayed feedback model is proposed and analyzed by computer simulation. This model is switching between two parameter varying optoelectronic delayed feedback models based on chaotic pseudorandom sequences. Complexity performance results show that this model has a high complexity compared to the original model. Furthermore, this model can conceal the time delay effectively against the auto-correlation function, delayed mutual information and permutation information analysis methods, and can extent the key space, which greatly improve its security.

  4. Study on Over-Sampling for Imager

    NASA Technical Reports Server (NTRS)

    Kigawa, Seiichiro; Sullivan, Pamela C.

    1998-01-01

    This report describes the potential improvement of the effective ground resolution of MTSAT (Multi-functional Transport Satellite) Imager. The IFOV (Instantaneous Field of View) of MTSAT Imager is 4 km for infrared and 1 km visible. A combination of some images acquired by the MTSAT Imager could generate 2 km-latticed infrared images. Furthermore, it is possible to generate an effective 2 km IFOV image by the enhancement of the 2 km-latticed image using Digital Signal Processing. This report also mentions the on-orbit demonstration of this concept.

  5. 78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-20

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International...

  6. Functional inks of graphene, metal dichalcogenides and black phosphorus for photonics and (opto)electronics

    NASA Astrophysics Data System (ADS)

    Howe, Richard C. T.; Hu, Guohua; Yang, Zongyin; Hasan, Tawfique

    2015-08-01

    We discuss the emerging role of solution processing and functional ink formulation in the fabrication of devices based on two dimensional (2d) materials. By drawing on examples from our research, we show that these inks allow 2d materials to be exploited in a wide variety of applications, including in photonics and (opto)electronics.

  7. Diagnostic opto-electronic system for measuring physical and biological characteristics of the skin in vivo

    NASA Astrophysics Data System (ADS)

    Makara, Ivanna V.; Kozhukhar, Oleksander T.; Komada, Pawel; Dussembayeva, Shynar

    2015-12-01

    Actuality development of optoelectronic rapid diagnostic system for measuring physical and biological characteristics of the skin in vivo with radiation of electromagnetic radiation in the optical range to obtain objective information on the spatial distribution of biochemical and morphological and anatomical components are different for state standards and pathology.

  8. Controlling Intramolecular Conformation through Nonbonding Interaction for Soft-Conjugated Materials: Molecular Design and Optoelectronic Properties.

    PubMed

    Cheng, Yuanfang; Qi, Yuanyuan; Tang, Yuting; Zheng, Chao; Wan, Yifang; Huang, Wei; Chen, Runfeng

    2016-09-15

    To address the intrinsic contradiction between high optoelectronic properties and good processability in organic π-conjugated molecules, we propose that soft-conjugated molecules (SCMs), conformationally locked by intramolecular nonbonding interactions, can benefit from both nonplanar molecular structures in solution for processing and rigid coplanar structures in the solid state for enhanced optoelectronic properties. Computational results reveal that nonbonding pairs of S···N, N···H, and F···S are strong enough to prevail over thermal fluctuations, steric effects, and other repulsive interactions to force the adjacent aromatic rings to be planar; thus, constructed SCMs display delocalized frontier molecular orbitals with frontier orbital energy levels, band gaps, reorganization energies, and photophyscial properties comparable to those of rigid-conjugated molecules because of their stable planar soft-conjugation at both ground and excited states. The understanding gained from the theoretical investigations of SCMs provides keen insights into construction and modification of soft-conjugations to harmonize the optoelectronic property and processability in conjugated molecules for advanced optoelectronic applications. PMID:27569364

  9. Controlling Intramolecular Conformation through Nonbonding Interaction for Soft-Conjugated Materials: Molecular Design and Optoelectronic Properties.

    PubMed

    Cheng, Yuanfang; Qi, Yuanyuan; Tang, Yuting; Zheng, Chao; Wan, Yifang; Huang, Wei; Chen, Runfeng

    2016-09-15

    To address the intrinsic contradiction between high optoelectronic properties and good processability in organic π-conjugated molecules, we propose that soft-conjugated molecules (SCMs), conformationally locked by intramolecular nonbonding interactions, can benefit from both nonplanar molecular structures in solution for processing and rigid coplanar structures in the solid state for enhanced optoelectronic properties. Computational results reveal that nonbonding pairs of S···N, N···H, and F···S are strong enough to prevail over thermal fluctuations, steric effects, and other repulsive interactions to force the adjacent aromatic rings to be planar; thus, constructed SCMs display delocalized frontier molecular orbitals with frontier orbital energy levels, band gaps, reorganization energies, and photophyscial properties comparable to those of rigid-conjugated molecules because of their stable planar soft-conjugation at both ground and excited states. The understanding gained from the theoretical investigations of SCMs provides keen insights into construction and modification of soft-conjugations to harmonize the optoelectronic property and processability in conjugated molecules for advanced optoelectronic applications.

  10. Fiber optics and opto-electronics for radar and electronic warfare applications

    NASA Astrophysics Data System (ADS)

    Pan, J. J.

    1987-02-01

    Fiber optics and integrated optic circuits have various applications for radar and electronic warfare systems. Examples such as phased array, radar netting, deceptive jammer, and maximum entropy adaptive filter are presented in this paper. Some of the fiber optic and opto-electronic functional devices and building blocks for signal/data processing are also described.

  11. Industrial optoelectronic measurement systems using coherent light; Proceedings of the Meeting, Cannes, France, Nov. 17-20, 1987

    NASA Astrophysics Data System (ADS)

    Fagan, William F.

    Practical applications of coherent-light optoelectronic measurement technology are discussed in reviews and reports. Topics addressed include optoelectronic instrumentation, industrial image-processing systems, quantitative fringe-pattern analysis, industrial applications of holography, speckle interferometry, and optoelectronic holographic and speckle techniques in automotive engineering. Particular attention is given to a robot-based automatic paint inspection system, a high-bandwidth laser heterodyne interferometer to measure transient mechanical displacement, extraction of three-dimensional flow data from transonic flow holograms, three-dimensional surface texture assessment for SEM, and computer-aided in-plane displacement and strain measurement using holographic interferometry.

  12. Growth, patterning and alignment of organolead iodide perovskite nanowires for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Deng, Hui; Dong, Dongdong; Qiao, Keke; Bu, Lingling; Li, Bing; Yang, Dun; Wang, Hong-En; Cheng, Yibing; Zhao, Zhixin; Tang, Jiang; Song, Haisheng

    2015-02-01

    Organolead halide perovskites are becoming intriguing materials applied in optoelectronics. In the present work, organolead iodide perovskite (OIP) nanowires (NWs) have been fabricated by a one step self-assembly method. The controllable NW distributions were implemented by a series of facile techniques: monolayer and small diameter NWs were prepared by precursor concentration tuning; NW patterning was achieved via selected area treatment assisted by a mask; NW alignment was implemented by modified evaporation-induced self-assembly (EISA). The synthesized multifunctional NWs were further applied in photodetectors (PDs) and solar cells as application demos. The PD performances have reached 1.32 AW-1 for responsivity, 2.5 × 1012 Jones for detectivity and 0.3 ms for response speed, superior to OIP films and other typical inorganic NW based PD performances. An energy conversion efficiency of ~2.5% has been obtained for NW film based solar cells. The facile fabrication process, controllable distribution and optoelectronic applications make the OIP NWs promising building blocks for future optoelectronics, especially for low dimensional devices.Organolead halide perovskites are becoming intriguing materials applied in optoelectronics. In the present work, organolead iodide perovskite (OIP) nanowires (NWs) have been fabricated by a one step self-assembly method. The controllable NW distributions were implemented by a series of facile techniques: monolayer and small diameter NWs were prepared by precursor concentration tuning; NW patterning was achieved via selected area treatment assisted by a mask; NW alignment was implemented by modified evaporation-induced self-assembly (EISA). The synthesized multifunctional NWs were further applied in photodetectors (PDs) and solar cells as application demos. The PD performances have reached 1.32 AW-1 for responsivity, 2.5 × 1012 Jones for detectivity and 0.3 ms for response speed, superior to OIP films and other typical inorganic

  13. Tailored single-walled carbon nanotube--CdS nanoparticle hybrids for tunable optoelectronic devices.

    PubMed

    Li, Xianglong; Jia, Yi; Cao, Anyuan

    2010-01-26

    The integration of organic and inorganic building blocks into novel nanohybrids is an important tool to exploit innovative materials with desirable functionalities. For this purpose, carbon nanotube--nanoparticle nanoarchitectures are intensively studied. We report here an efficient noncovalent chemical route to density-controllably and uniformly assemble single-walled carbon nanotubes with CdS nanoparticles. The methodology not only promises the resulting hybrids will be solution-processable but also endows the hybrids with distinct optoelectronic properties including tunable photoresponse mediated by amine molecules. On the basis of these merits, reliable thin-film photoswitches and light-driven chemical sensors are demonstrated, which highlights the potential of tailored hybrids in the development of new tunable optoelectronic devices and sensors.

  14. Fabrication of lateral electrodes on semiconductor nanowires through structurally matched insulation for functional optoelectronics.

    PubMed

    Sheng, Yun; Sun, Huabin; Wang, Jianyu; Gao, Fan; Wang, Junzhuan; Pan, Lijia; Pu, Lin; Zheng, Youdou; Shi, Yi

    2013-01-18

    A strategy of using structurally matched alumina insulation to produce lateral electrodes on semiconductor nanowires is presented. Nanowires in the architecture are structurally matched with alumina insulation using selective anodic oxidation. Lateral electrodes are fabricated by directly evaporating metallic atoms onto the opposite sides of the nanowires. The integrated architecture with lateral electrodes propels carriers to transport them across nanowires and is crucially beneficial to the injection/extraction in optoelectronics. The matched architecture and the insulating properties of the alumina layer are investigated experimentally. ZnO nanowires are functionalized into an ultraviolet photodiode as an example. The present strategy successfully implements an advantageous architecture and is significant in developing diverse semiconductor nanowires in optoelectronic applications.

  15. Optoelectronic devices based on MoTe2 p-n junction

    NASA Astrophysics Data System (ADS)

    Bie, Ya-Qing; Heuck, Mikkel; Furchi, Marco; Grosso, Gabriele; Zheng, Jiabao; Cao, Yuan; Navarro-Moratalla, Efren; Englund, Dirk; Jarillo-Herrero, Pablo

    2D transition metal dichalcogenides (2D-TMD), such as MoS2, have been verified with many remarkable physical properties, which include an indirect to direct band transition as a function of thickness and a valley dependent spin polarization. One of the 2D-TMD family members, 2H-MoTe2 has been shown to be a direct bandgap semiconductor as a monolayer and bilayer with a near infrared (NIR) bandgap of about 1.1eV. However, optoelectronic devices based on MoTe2 were so far not experimentally demonstrated. Here, we will present a high on-off ratio MoTe2 p-n junction enabled by a hexagonal boron nitride encapsulation technique. Our study of the MoTe2 p-n junction devices sheds light on designing efficient NIR optoelectronic devices such as photodetectors and energy harvesting cells and light emitters.

  16. Fabrication of lateral electrodes on semiconductor nanowires through structurally matched insulation for functional optoelectronics

    NASA Astrophysics Data System (ADS)

    Sheng, Yun; Sun, Huabin; Wang, Jianyu; Gao, Fan; Wang, Junzhuan; Pan, Lijia; Pu, Lin; Zheng, Youdou; Shi, Yi

    2013-01-01

    A strategy of using structurally matched alumina insulation to produce lateral electrodes on semiconductor nanowires is presented. Nanowires in the architecture are structurally matched with alumina insulation using selective anodic oxidation. Lateral electrodes are fabricated by directly evaporating metallic atoms onto the opposite sides of the nanowires. The integrated architecture with lateral electrodes propels carriers to transport them across nanowires and is crucially beneficial to the injection/extraction in optoelectronics. The matched architecture and the insulating properties of the alumina layer are investigated experimentally. ZnO nanowires are functionalized into an ultraviolet photodiode as an example. The present strategy successfully implements an advantageous architecture and is significant in developing diverse semiconductor nanowires in optoelectronic applications.

  17. Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector

    NASA Astrophysics Data System (ADS)

    Ko, Pil Ju; Abderrahmane, Abdelkader; Takamura, Tsukasa; Kim, Nam-Hoon; Sandhu, Adarsh

    2016-08-01

    Two-dimensional (2D) layered materials exhibit unique optoelectronic properties at atomic thicknesses. In this paper, we fabricated metal–semiconductor–metal based photodetectors using layered gallium selenide (GaSe) with different thicknesses. The electrical and optoelectronic properties of the photodetectors were studied, and these devices showed good electrical characteristics down to GaSe flake thicknesses of 30 nm. A photograting effect was observed in the absence of a gate voltage, thereby implying a relatively high photoresponsivity. Higher values of the photoresponsivity occurred for thicker layers of GaSe with a maximum value 0.57 AW‑1 and external quantum efficiency of of 132.8%, and decreased with decreasing GaSe flake thickness. The detectivity was 4.05 × 1010 cm Hz1/2 W‑1 at 532 nm laser wavelength, underscoring that GaSe is a promising p-type 2D material for photodetection applications in the visible spectrum.

  18. Optoelectronic studies on heterocyclic bases of deoxyribonucleic acid for DNA photonics.

    PubMed

    El-Diasty, Fouad; Abdel-Wahab, Fathy

    2015-10-01

    The optoelectronics study of large molecules, particularly π-stacking molecules, such as DNA is really an extremely difficult task. We perform first electronic structure calculations on the heterocyclic bases of 2'-deoxyribonucleic acid based on Lorentz-Fresnel dispersion theory. In the UV-VIS range of spectrum, many of the optoelectronic parameters for DNA four bases namely adenine, guanine, cytosine and thymine are calculated and discussed. The results demonstrate that adenine has the highest hyperpolarizability, whereas thymine has the lowest hyperpolarizability. Cytosine has the lower average oscillator energy and the higher lattice energy. Thymine infers the most stable nucleic base with the lower phonon energy. Thymine also has the highest average oscillator energy and the lower lattice energy. Moreover, the four nucleic acid bases have large band gap energies less than 5 eV with a semiconducting behavior. Guanine shows the smallest band gap and the highest Fermi level energy, whereas adenine elucidates the highest band gap energy.

  19. Effect of annealing over optoelectronic properties of graphene based transparent electrodes

    NASA Astrophysics Data System (ADS)

    Yadav, Shriniwas; Kaur, Inderpreet

    2016-04-01

    Graphene, an atom-thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σdc/σopt) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

  20. Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide

    NASA Astrophysics Data System (ADS)

    Li, Hong; Contryman, Alex W.; Qian, Xiaofeng; Ardakani, Sina Moeini; Gong, Yongji; Wang, Xingli; Weisse, Jeffery M.; Lee, Chi Hwan; Zhao, Jiheng; Ajayan, Pulickel M.; Li, Ju; Manoharan, Hari C.; Zheng, Xiaolin

    2015-06-01

    The isolation of the two-dimensional semiconductor molybdenum disulphide introduced a new optically active material possessing a band gap that can be facilely tuned via elastic strain. As an atomically thin membrane with exceptional strength, monolayer molybdenum disulphide subjected to biaxial strain can embed wide band gap variations overlapping the visible light spectrum, with calculations showing the modified electronic potential emanating from point-induced tensile strain perturbations mimics the Coulomb potential in a mesoscopic atom. Here we realize and confirm this `artificial atom' concept via capillary-pressure-induced nanoindentation of monolayer molybdenum disulphide from a tailored nanopattern, and demonstrate that a synthetic superlattice of these building blocks forms an optoelectronic crystal capable of broadband light absorption and efficient funnelling of photogenerated excitons to points of maximum strain at the artificial-atom nuclei. Such two-dimensional semiconductors with spatially textured band gaps represent a new class of materials, which may find applications in next-generation optoelectronics or photovoltaics.

  1. Optoelectronic Crystal of Artificial Atoms in Strain-Textured MoS2

    NASA Astrophysics Data System (ADS)

    Contryman, Alex W.; Li, Hong; Fragapane, Alex H.; Qian, Xiaofeng; Ardakani, Sina Moeini; Gong, Yongji; Wang, Xingli; Weisse, Jeffrey M.; Lee, Chi Hwan; Zhao, Jiheng; Ajayan, Pulickel M.; Li, Ju; Zheng, Xiaolin; Manoharan, Hari C.

    2015-03-01

    The atomically thin semiconductor MoS2 possesses exceptional strength and a strain-tunable band gap. When subjected to biaxial elastic strain, monolayer MoS2 can embed wide band gap variations overlapping the visible spectrum, with calculations showing the modified electronic potential emanating from point-induced tensile strain perturbations mimic the Coulomb potential in a mesoscopic atom. We have realized and confirmed this ``artificial atom'' concept via capillary-pressure-induced nanoindentation of monolayer MoS2 from a tailored nanostructure. We demonstrate that a synthetic lattice of these building blocks forms an optoelectronic crystal capable of broadband light absorption and efficient funneling of photogenerated excitons to points of maximum strain at the atom centers. Such 2D semiconductors with spatially textured band gaps represent a new class of materials which may find applications in next-generation optoelectronics or photovoltaics.

  2. Asynchronous transfer mode distribution network by use of an optoelectronic VLSI switching chip.

    PubMed

    Lentine, A L; Reiley, D J; Novotny, R A; Morrison, R L; Sasian, J M; Beckman, M G; Buchholz, D B; Hinterlong, S J; Cloonan, T J; Richards, G W; McCormick, F B

    1997-03-10

    We describe a new optoelectronic switching system demonstration that implements part of the distribution fabric for a large asynchronous transfer mode (ATM) switch. The system uses a single optoelectronic VLSI modulator-based switching chip with more than 4000 optical input-outputs. The optical system images the input fibers from a two-dimensional fiber bundle onto this chip. A new optomechanical design allows the system to be mounted in a standard electronic equipment frame. A large section of the switch was operated as a 208-Mbits/s time-multiplexed space switch, which can serve as part of an ATM switch by use of an appropriate out-of-band controller. A larger section with 896 input light beams and 256 output beams was operated at 160 Mbits/s as a slowly reconfigurable space switch. PMID:18250868

  3. Development of implantable optoelectronic module for optical brain tissue stimulation in freely moving mice

    NASA Astrophysics Data System (ADS)

    Rusakov, Konstantin; Czajkowski, Rafał; Kaźmierczak, Andrzej

    2015-09-01

    The research aims to design and manufacture of wireless optogenetics devices for freely moving animals in cages IntelliCage system. The purpose of the device is to stimulate specific brain regions using light. The constructed device consists of a light source and optical fibre structure responsible for delivering light into the corresponding region of the brain of the animal. The size of the animal (mouse) and the fact that it is freely moving imposes substantial limitations with respect to the size and weight of the optoelectronic device. The present paper describes research on optical fibre structure fabrication, assembling it to the small size (less than 500 × 500 μm2 top surface) LED chip and experimental validation of the optoelectronic stimulator.

  4. Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide.

    PubMed

    Li, Hong; Contryman, Alex W; Qian, Xiaofeng; Ardakani, Sina Moeini; Gong, Yongji; Wang, Xingli; Weisse, Jeffery M; Lee, Chi Hwan; Zhao, Jiheng; Ajayan, Pulickel M; Li, Ju; Manoharan, Hari C; Zheng, Xiaolin

    2015-06-19

    The isolation of the two-dimensional semiconductor molybdenum disulphide introduced a new optically active material possessing a band gap that can be facilely tuned via elastic strain. As an atomically thin membrane with exceptional strength, monolayer molybdenum disulphide subjected to biaxial strain can embed wide band gap variations overlapping the visible light spectrum, with calculations showing the modified electronic potential emanating from point-induced tensile strain perturbations mimics the Coulomb potential in a mesoscopic atom. Here we realize and confirm this 'artificial atom' concept via capillary-pressure-induced nanoindentation of monolayer molybdenum disulphide from a tailored nanopattern, and demonstrate that a synthetic superlattice of these building blocks forms an optoelectronic crystal capable of broadband light absorption and efficient funnelling of photogenerated excitons to points of maximum strain at the artificial-atom nuclei. Such two-dimensional semiconductors with spatially textured band gaps represent a new class of materials, which may find applications in next-generation optoelectronics or photovoltaics.

  5. A tunable hemispherical platform for non-stretching curved flexible electronics and optoelectronics

    SciTech Connect

    Zhuang, Jinda; Ju, Y. Sungtaek

    2014-07-28

    One major challenge in incorporating flexible electronics or optoelectronics on curved surfaces is the requirement of significant stretchability. We report a tunable platform for incorporating flexible and yet non-stretching device layers on a hemisphere. In this configuration, an array of planar petals contractively maps onto the surface of an inflatable hemisphere through elastocapillary interactions mediated by an interface liquid. A mechanical model is developed to elucidate the dependence of the conformality of the petal structures on their elastic modulus and thickness and the liquid surface tension. The modeling results are validated against experimental results obtained using petal structures of different thicknesses, restoring elastic spring elements of different spring constants, and liquids with different surface tension coefficients. Our platform will enable facile integration of non-stretching electronic and optoelectronic components prepared using established planar fabrication techniques on tunable hemispherical surfaces.

  6. Permutation-network-based optoelectronic path-history units for Viterbi decoders.

    PubMed

    Lin, M B

    2000-09-10

    A concept, believed to be new, is introduced that enables the design and implementation of the path-history (PH) unit of Viterbi decoders with permutation networks. The rationale behind this concept is that the trace-back operation in the PH unit is nothing but propagation of a signal traveling from the rightmost end to the leftmost end in the trellis diagram controlled appropriately by the decision bits. On the basis of this observation, an optoelectronic PH unit, which consists of directional coupler switches and registers, is proposed. This unit can be treated as a direct implementation of the trellis diagram of the underlying convolutional code and carries out the trace-back operation by propagating a photonic signal rather than an electronic signal through a given permutation network controlled by the decision bits. Hence the speed is inherently faster than the equivalent electronic version. Here both unfolded and folded versions of optoelectronic PH units are proposed.

  7. Design of a dual-axis optoelectronic level for precision angle measurements

    NASA Astrophysics Data System (ADS)

    Fan, Kuang-Chao; Wang, Tsung-Han; Lin, Sheng-Yi; Liu, Yen-Chih

    2011-05-01

    The accuracy of machine tools is mainly determined by angular errors during linear motion according to the well-known Abbe principle. Precision angle measurement is important to precision machines. This paper presents the theory and experiments of a new dual-axis optoelectronic level with low cost and high precision. The system adopts a commercial DVD pickup head as the angle sensor in association with the double-layer pendulum mechanism for two-axis swings, respectively. In data processing with a microprocessor, the measured angles of both axes can be displayed on an LCD or exported to an external PC. Calibrated by a triple-beam laser angular interferometer, the error of the dual-axis optoelectronic level is better than ±0.7 arcsec in the measuring range of ±30 arcsec, and the settling time is within 0.5 s. Experiments show the applicability to the inspection of precision machines.

  8. Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

    NASA Astrophysics Data System (ADS)

    Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

    2016-08-01

    The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics.

  9. Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

    PubMed Central

    Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

    2016-01-01

    The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics. PMID:27507171

  10. Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector

    NASA Astrophysics Data System (ADS)

    Ko, Pil Ju; Abderrahmane, Abdelkader; Takamura, Tsukasa; Kim, Nam-Hoon; Sandhu, Adarsh

    2016-08-01

    Two-dimensional (2D) layered materials exhibit unique optoelectronic properties at atomic thicknesses. In this paper, we fabricated metal-semiconductor-metal based photodetectors using layered gallium selenide (GaSe) with different thicknesses. The electrical and optoelectronic properties of the photodetectors were studied, and these devices showed good electrical characteristics down to GaSe flake thicknesses of 30 nm. A photograting effect was observed in the absence of a gate voltage, thereby implying a relatively high photoresponsivity. Higher values of the photoresponsivity occurred for thicker layers of GaSe with a maximum value 0.57 AW-1 and external quantum efficiency of of 132.8%, and decreased with decreasing GaSe flake thickness. The detectivity was 4.05 × 1010 cm Hz1/2 W-1 at 532 nm laser wavelength, underscoring that GaSe is a promising p-type 2D material for photodetection applications in the visible spectrum.

  11. Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion.

    PubMed

    Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

    2016-01-01

    The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene's unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics. PMID:27507171

  12. Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.

    PubMed

    Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei

    2013-10-13

    Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

  13. Optoelectronically automated system for carbon nanotubes synthesis via arc-discharge in solution

    NASA Astrophysics Data System (ADS)

    Bera, Debasis; Brinley, Erik; Kuiry, Suresh C.; McCutchen, Matthew; Seal, Sudipta; Heinrich, Helge; Kabes, Bradley

    2005-03-01

    The method of arc discharge in the solution is unique and inexpensive route for synthesis of the carbon nanotubes (CNTs), carbon onions, and other carbon nanostructures. Such a method can be used for in situ synthesis of CNTs decorated with nanoparticles. Herein, we report a simple and inexpensive optoelectronically automated system for arc discharge in solution synthesis of CNTs. The optoelectronic system maintains a constant gap between the two electrodes allowing a continuous synthesis of the carbon nanostructures. The system operates in a feedback loop consisting of an electrode-gap detector and an analog electronic unit, as controller. This computerized feeding system of the anode was used for in situ nanoparticles incorporated CNTs. For example, we have successfully decorated CNTs with ceria, silica, and palladium nanoparticles. Characterizations of nanostructures are performed using high-resolution transmission electron microscopy, scanning transmission electron microscopy, energy dispersive spectroscopy, and scanning electron microscopy.

  14. The effects of cyclic conjugation and bending on the optoelectronic properties of paraphenylenes.

    PubMed

    Li, Penghao; Sisto, Thomas J; Darzi, Evan R; Jasti, Ramesh

    2014-01-01

    Cycloparaphenylenes (CPPs) have optoelectronic properties that are unique when compared to their acyclic oligoparaphenylene counterparts. The synthesis and characterization of two bent heptaphenyl-containing macrocycles has been achieved in order to probe the effects of bending and cyclic conjugation on the properties of the CPPs. The study suggests that both bending and cyclic conjugation play a role in the novel properties of the CPPs. PMID:24313820

  15. Optodic bonding of optoelectronic components in transparent polymer substrates-based flexible circuit systems

    NASA Astrophysics Data System (ADS)

    Wang, Yixiao; Akin, Meriem; Jogschies, Lisa; Overmeyer, Ludger; Rissing, Lutz

    2015-02-01

    In the field of modern information technology, optoelectronics are being widely used, and play an increasingly important role. Meanwhile, the demand for more flexible circuit carriers is rapidly growing, since flexibility facilitates the realization of diverse functions and applications. As a potential candidate, transparent polymer substrates with a thickness of about a hundred micrometers by virtue of their low cost and sufficient flexibility are getting more attention. Thus, accomplishing an integration of optoelectronic components into polymer based flexible circuit systems increasingly is becoming an attractive research topic, which is of great significance for future information transmission and processing. We are committed to developing a new microchip bonding process to realize it. Taking into account the fact that most economical transparent polymer substrates can only be processed with restricted thermal loading, we designed a so-called optode instead of a widely adopted thermode. We employ UV-curing adhesives as bonding materials; accordingly, the optode is equipped with a UV irradiation source. An investigation of commercial optoelectronic components is conducted, in which their dimensions and structures are studied. While selecting appropriate transparent polymer substrates, we take their characteristics such as UV transmission degree, glass transition temperature, etc. as key criterions, and choose polyethylene terephthalate (PET) and polymethyl methacrylate (PMMA) as carrier materials. Besides bonding achieved through the use of adhesives cured by the optode, underfill is accordingly employed to enhance the reliability of the integration. We deposit electrical interconnects onto the polymeric substrate to be able to bring the optoelectronic components into electrical operation. In order to enlarge the optical coupling zone from component to substrate within the proximity of the adhesive or underfill, we employ transparent interconnects made of indium

  16. Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality.

    PubMed

    Bilgin, Ismail; Liu, Fangze; Vargas, Anthony; Winchester, Andrew; Man, Michael K L; Upmanyu, Moneesh; Dani, Keshav M; Gupta, Gautam; Talapatra, Saikat; Mohite, Aditya D; Kar, Swastik

    2015-09-22

    The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising low-cost route for CMOS compatible, large-scale growth of materials, it often falls short of the high-quality demands in nanoelectronics and optoelectronics. We present large-scale CVD synthesis of single- and few-layered MoS2 using direct vapor-phase sulfurization of MoO2, which enables us to obtain extremely high-quality single-crystal monolayer MoS2 samples with field-effect mobility exceeding 30 cm(2)/(V s) in monolayers. These samples can be readily synthesized on a variety of substrates, and demonstrate a high-degree of optoelectronic uniformity in Raman and photoluminescence mapping over entire crystals with areas exceeding hundreds of square micrometers. Because of their high crystalline quality, Raman spectroscopy on these samples reveal a range of multiphonon processes through peaks with equal or better clarity compared to past reports on mechanically exfoliated samples. This enables us to investigate the layer thickness and substrate dependence of the extremely weak phonon processes at 285 and 487 cm(-1) in 2D-MoS2. The ultrahigh, optoelectronic-grade crystalline quality of these samples could be further established through photocurrent spectroscopy, which clearly reveal excitonic states at room temperature, a feat that has been previously demonstrated only on samples which were fabricated by micro-mechanical exfoliation and then artificially suspended across trenches. Our method reflects a big step in the development of atomically thin, 2D-MoS2 for scalable, high-quality optoelectronics. PMID:26256639

  17. Architectural and performance considerations for a 10(7)-instruction/sec optoelectronic central processing unit.

    PubMed

    Arrathoon, R; Kozaitis, S

    1987-11-01

    Architectural considerations for a multiple-instruction, single-data-based optoelectronic central processing unit operating at 10(7) instructions per second are detailed. Central to the operation of this device is a giant fiber-optic content-addressable memory in a programmable logic array configuration. The design includes four instructions and emphasizes the fan-in and fan-out capabilities of optical systems. Interconnection limitations and scaling issues are examined.

  18. GeSi strained nanostructure self-assembly for nano- and opto-electronics.

    SciTech Connect

    Means, Joel L.; Floro, Jerrold Anthony

    2001-07-01

    Strain-induced self-assembly during semiconductor heteroepitaxy offers a promising approach to produce quantum nanostructures for nanologic and optoelectronics applications. Our current research direction aims to move beyond self-assembly of the basic quantum dot towards the fabrication of more complex, potentially functional structures such as quantum dot molecules and quantum wires. This report summarizes the steps taken to improve the growth quality of our GeSi molecular beam epitaxy process, and then highlights the outcomes of this effort.

  19. Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality.

    PubMed

    Bilgin, Ismail; Liu, Fangze; Vargas, Anthony; Winchester, Andrew; Man, Michael K L; Upmanyu, Moneesh; Dani, Keshav M; Gupta, Gautam; Talapatra, Saikat; Mohite, Aditya D; Kar, Swastik

    2015-09-22

    The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising low-cost route for CMOS compatible, large-scale growth of materials, it often falls short of the high-quality demands in nanoelectronics and optoelectronics. We present large-scale CVD synthesis of single- and few-layered MoS2 using direct vapor-phase sulfurization of MoO2, which enables us to obtain extremely high-quality single-crystal monolayer MoS2 samples with field-effect mobility exceeding 30 cm(2)/(V s) in monolayers. These samples can be readily synthesized on a variety of substrates, and demonstrate a high-degree of optoelectronic uniformity in Raman and photoluminescence mapping over entire crystals with areas exceeding hundreds of square micrometers. Because of their high crystalline quality, Raman spectroscopy on these samples reveal a range of multiphonon processes through peaks with equal or better clarity compared to past reports on mechanically exfoliated samples. This enables us to investigate the layer thickness and substrate dependence of the extremely weak phonon processes at 285 and 487 cm(-1) in 2D-MoS2. The ultrahigh, optoelectronic-grade crystalline quality of these samples could be further established through photocurrent spectroscopy, which clearly reveal excitonic states at room temperature, a feat that has been previously demonstrated only on samples which were fabricated by micro-mechanical exfoliation and then artificially suspended across trenches. Our method reflects a big step in the development of atomically thin, 2D-MoS2 for scalable, high-quality optoelectronics.

  20. Dual-wavelength method and optoelectronic sensor for online monitoring of the efficiency of dialysis treatment

    NASA Astrophysics Data System (ADS)

    Vasilevsky, A. M.; Konoplev, G. A.; Stepanova, O. S.; Zemchenkov, A. Yu; Gerasimchuk, R. P.; Frorip, A.

    2015-11-01

    The absorption spectra of effluent dialysate in the ultraviolet region were investigated. A novel dual-wavelength spectrophotometric method for uric acid determination in effluent dialysate and an optoelectronic sensor based on UV LED were developed. Clinical trials of the proposed sensor were carried out in the dialysis unit of St. Petersburg Mariinsky Hospital. The relative error of measurement for the concentration of uric acid does not exceed 10%.

  1. An optoelectronic integrated device including a laser and its driving circuit

    NASA Astrophysics Data System (ADS)

    Matsueda, H.; Tanaka, T. P.; Nakano, H.

    1984-10-01

    A monolithic optoelectronic integrated circuit (OEIC) including a laser diode, photomonitor and driving and detecting circuits has been fabricated on a semi-insulating GaAs substrate. The OEIC has a horizontal integrating structure which is suitable for realizing high-density multifunctional devices. The fabricating process and the static and dynamic characteristics of the optical and electronic elements are described. The preliminary results of the cooperative operation of the laser and its driving circuit are also presented.

  2. Self-assembled III-V quantum dots: potential for silicon optoelectronics

    NASA Technical Reports Server (NTRS)

    Leon, R.

    2001-01-01

    The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.

  3. Marriage of heavy main group elements with π-conjugated materials for optoelectronic applications.

    PubMed

    Parke, Sarah M; Boone, Michael P; Rivard, Eric

    2016-08-01

    This review article summarizes recent progress in the synthesis and optoelectronic properties of conjugated materials containing heavy main group elements from Group 13-16 as integral components. As will be discussed, the introduction of these elements can promote novel phosphorescent behavior and support desirable molecular and polymeric properties such as low optical band gaps and high charge mobilities for photovoltaic and thin film transistor applications. PMID:27344980

  4. Sub-Poissonian light and photocurrent shot-noise suppression in closed opto-electronic loop

    NASA Technical Reports Server (NTRS)

    Masalov, A. V.; Putilin, A. A.; Vasilyev, Michael V.

    1994-01-01

    We examine experimentally photocurrent noise reduction in the opto-electronic closed loop. Photocurrent noise density 12.5 dB below the shot-noise was observed. So large suppression was not reached in previous experiments and cannot be explained in terms of an ordinary sub-Poissonian light in the loop. We propose the concept of anticorrelation state for the description of light in the loop.

  5. Visual pattern recognition network: its training algorithm and its optoelectronic architecture

    NASA Astrophysics Data System (ADS)

    Wang, Ning; Liu, Liren

    1996-07-01

    A visual pattern recognition network and its training algorithm are proposed. The network constructed of a one-layer morphology network and a two-layer modified Hamming net. This visual network can implement invariant pattern recognition with respect to image translation and size projection. After supervised learning takes place, the visual network extracts image features and classifies patterns much the same as living beings do. Moreover we set up its optoelectronic architecture for real-time pattern recognition.

  6. In Situ Formation of Crystallographically Oriented Semiconductor Nanowire Arrays via Selective Vaporization for Optoelectronic Applications.

    PubMed

    Huang, Xing; Yu, Yongqiang; Jones, Travis; Fan, Hua; Wang, Lei; Xia, Jing; Wang, Zhu-Jun; Shao, Li-Dong; Meng, Xiang-Min; Willinger, Marc-Georg

    2016-09-01

    Direct transformation of bulk crystals to single-crystalline crystallographically oriented semiconductor nanowire arrays is presented. Real-time imaging during in situ environmental scanning electron microscopy experiment clearly demonstrates that the nanowire arrays form through a selective vaporization process with respect to the crystallography of wurtzite crystals. Due to the high quality of the prepared semiconductor nanowire arrays, photodetectors constructed from them can present superior optoelectronic performances. PMID:27373221

  7. Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

    PubMed Central

    Wang, Gongming; Li, Dehui; Cheng, Hung-Chieh; Li, Yongjia; Chen, Chih-Yen; Yin, Anxiang; Zhao, Zipeng; Lin, Zhaoyang; Wu, Hao; He, Qiyuan; Ding, Mengning; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

    2015-01-01

    Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems. PMID:26601297

  8. Accuracy and feasibility of optoelectronic sensors for weed mapping in wide row crops.

    PubMed

    Andújar, Dionisio; Ribeiro, Ángela; Fernández-Quintanilla, César; Dorado, José

    2011-01-01

    The main objectives of this study were to assess the accuracy of a ground-based weed mapping system that included optoelectronic sensors for weed detection, and to determine the sampling resolution required for accurate weed maps in maize crops. The optoelectronic sensors were located in the inter-row area of maize to distinguish weeds against soil background. The system was evaluated in three maize fields in the early spring. System verification was performed with highly reliable data from digital images obtained in a regular 12 m × 12 m grid throughout the three fields. The comparison in all these sample points showed a good relationship (83% agreement on average) between the data of weed presence/absence obtained from the optoelectronic mapping system and the values derived from image processing software ("ground truth"). Regarding the optimization of sampling resolution, the comparison between the detailed maps (all crop rows with sensors separated 0.75 m) with maps obtained with various simulated distances between sensors (from 1.5 m to 6.0 m) indicated that a 4.5 m distance (equivalent to one in six crop rows) would be acceptable to construct accurate weed maps. This spatial resolution makes the system cheap and robust enough to generate maps of inter-row weeds.

  9. Highly Conductive Transparent Organic Electrodes with Multilayer Structures for Rigid and Flexible Optoelectronics

    PubMed Central

    Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

    2015-01-01

    Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric–metal–dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq−1 at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices. PMID:26014889

  10. Monolithic optoelectronic chip for label-free multi-analyte sensing applications

    NASA Astrophysics Data System (ADS)

    Raptis, Ioannis; Makarona, Eleni; Petrou, Panagiota; Kakabakos, Sotiris E.; Misiakos, Konstantinos

    2014-03-01

    The existing technological approaches employed in the realization of optical sensors still face two major challenges: the inherent inability of most sensors to integrate the optical source in the transducer chip, and the need to specifically design the optical transducer per application. We have introduced a unique Optoelectronic chip that consists of a series of light emitting diodes (LEDs) coupled to silicon nitride waveguides allowing for multi-analyte detection. Each optocoupler is structured as Broad-Band Mach-Zehnder Interferometer and has its own excitation source and can either have its own detector or the entire array can share a common detector. The light emitting devices (LEDs) are silicon avalanche diodes which when biased beyond their breakdown voltage emit in the VIS-NIR part of the spectrum. The optoelectronic chip is fabricated by standard silicon technology allowing for potential mass production in silicon foundries. The integrated nature of the optoelectronic chip and the ability to functionalize each transducer independently allows for the development of miniaturized optical transducers tailored towards multi-analyte tests. The platform has been successfully applied in bioassays and binding assays monitoring in a real-time and label-free format and is currently being applied to ultra-sensitive food safety applications.

  11. Unusual Optoelectronic Properties of Hydrogenated Bilayer Silicene: From Solar Absorber to Light-emitting Diode Applications

    NASA Astrophysics Data System (ADS)

    Huang, Bing; Deng, Hui-Xiong; Lee, Hoonkyung; Park, Changwon; Yoon, Mina; Sumpter, Bobby; Liu, Feng; Smith, Sean; Wei, Su-Huai

    2014-03-01

    Silicon is arguably the greatest electronic material, but not so good an optoelectronic material. By employing first-principles calculations and cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS) shows promising potential as new optoelectronic materials. Most significantly, hydrogenation will covert the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single- and double-side hydrogenated BS are characterized with dipole-allowed direct (or quasidirect) band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-side hydrogenated BS structures exhibit direct (or quasidirect) band gaps in the range of red, green, and blue colors, respectively, affording white light emitting diodes. Our findings open a door to the search of new silicon-based light-absorption and light-emitting materials for earth-abundant high-efficiency optoelectronic applications. This research is sponsored by the Materials Sciences and Engineering Division, Office of Basic Energy Sciences, U.S. Department of Energy.

  12. Accuracy and Feasibility of Optoelectronic Sensors for Weed Mapping in Wide Row Crops

    PubMed Central

    Andújar, Dionisio; Ribeiro, Ángela; Fernández-Quintanilla, César; Dorado, José

    2011-01-01

    The main objectives of this study were to assess the accuracy of a ground-based weed mapping system that included optoelectronic sensors for weed detection, and to determine the sampling resolution required for accurate weed maps in maize crops. The optoelectronic sensors were located in the inter-row area of maize to distinguish weeds against soil background. The system was evaluated in three maize fields in the early spring. System verification was performed with highly reliable data from digital images obtained in a regular 12 m × 12 m grid throughout the three fields. The comparison in all these sample points showed a good relationship (83% agreement on average) between the data of weed presence/absence obtained from the optoelectronic mapping system and the values derived from image processing software (“ground truth”). Regarding the optimization of sampling resolution, the comparison between the detailed maps (all crop rows with sensors separated 0.75 m) with maps obtained with various simulated distances between sensors (from 1.5 m to 6.0 m) indicated that a 4.5 m distance (equivalent to one in six crop rows) would be acceptable to construct accurate weed maps. This spatial resolution makes the system cheap and robust enough to generate maps of inter-row weeds. PMID:22163740

  13. Highly conductive transparent organic electrodes with multilayer structures for rigid and flexible optoelectronics.

    PubMed

    Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

    2015-01-01

    Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric-metal-dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq(-1) at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices. PMID:26014889

  14. Solution growth of single crystal methylammonium lead halide perovskite nanostructures for optoelectronic and photovoltaic applications.

    PubMed

    Fu, Yongping; Meng, Fei; Rowley, Matthew B; Thompson, Blaise J; Shearer, Melinda J; Ma, Dewei; Hamers, Robert J; Wright, John C; Jin, Song

    2015-05-01

    Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic-inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid-liquid interfacial conversion reaction can create a highly crystalline, nanostructured MAPbI3 film with micrometer grain size and high surface coverage that enables photovoltaic devices with a power conversion efficiency of 10.6%. These results suggest that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.

  15. Optoelectronically probing the density of nanowire surface trap states to the single state limit

    SciTech Connect

    Dan, Yaping

    2015-02-02

    Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 10{sup 9 }cm{sup −2}/eV at deep levels to 10{sup 12 }cm{sup −2}/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

  16. Two-Dimensional CH₃NH₃PbI₃ Perovskite: Synthesis and Optoelectronic Application.

    PubMed

    Liu, Jingying; Xue, Yunzhou; Wang, Ziyu; Xu, Zai-Quan; Zheng, Changxi; Weber, Bent; Song, Jingchao; Wang, Yusheng; Lu, Yuerui; Zhang, Yupeng; Bao, Qiaoliang

    2016-03-22

    Hybrid organic-inorganic perovskite materials have received substantial research attention due to their impressively high performance in photovoltaic devices. As one of the oldest functional materials, it is intriguing to explore the optoelectronic properties in perovskite after reducing it into a few atomic layers in which two-dimensional (2D) confinement may get involved. In this work, we report a combined solution process and vapor-phase conversion method to synthesize 2D hybrid organic-inorganic perovskite (i.e., CH3NH3PbI3) nanocrystals as thin as a single unit cell (∼1.3 nm). High-quality 2D perovskite crystals have triangle and hexagonal shapes, exhibiting tunable photoluminescence while the thickness or composition is changed. Due to the high quantum efficiency and excellent photoelectric properties in 2D perovskites, a high-performance photodetector was demonstrated, in which the current can be enhanced significantly by shining 405 and 532 nm lasers, showing photoresponsivities of 22 and 12 AW(-1) with a voltage bias of 1 V, respectively. The excellent optoelectronic properties make 2D perovskites building blocks to construct 2D heterostructures for wider optoelectronic applications. PMID:26910395

  17. Optoelectronic Devices, Sensors, Communication and Multimedia, Photonics Applications and Web Engineering, Wilga, May 2012

    NASA Astrophysics Data System (ADS)

    Romaniuk, Ryszard S.

    2012-05-01

    This paper is the fourth part (out of five) of the research survey of WILGA Symposium work, May 2012 Edition, concerned with Optoelectronic Devices, Sensors, Communication and Multimedia (Video and Audio) technologies. It presents a digest of chosen technical work results shown by young researchers from different technical universities from this country during the Jubilee XXXth SPIE-IEEE Wilga 2012, May Edition, symposium on Photonics and Web Engineering. Topical tracks of the symposium embraced, among others, nanomaterials and nanotechnologies for photonics, sensory and nonlinear optical fibers, object oriented design of hardware, photonic metrology, optoelectronics and photonics applications, photonics-electronics co-design, optoelectronic and electronic systems for astronomy and high energy physics experiments, JET tokamak and pi-of-the sky experiments development. The symposium is an annual summary in the development of numerable Ph.D. theses carried out in this country in the area of advanced electronic and photonic systems. It is also a great occasion for SPIE, IEEE, OSA and PSP students to meet together in a large group spanning the whole country with guests from this part of Europe. A digest of Wilga references is presented [1-270].

  18. Cell patterning via diffraction-induced optoelectronic dielectrophoresis force on an organic photoconductive chip.

    PubMed

    Yang, Shih-Mo; Tseng, Sheng-Yang; Chen, Hung-Po; Hsu, Long; Liu, Cheng-Hsien

    2013-10-01

    A laser diffraction-induced dielectrophoresis (DEP) phenomenon for the patterning and manipulation of individual HepG2 cells and polystyrene beads via positive/negative DEP forces is reported in this paper. The optoelectronic substrate was fabricated using an organic photoconductive material, TiOPc, via a spin-coating process on an indium tin oxide glass surface. A piece of square aperture array grid grating was utilized to transform the collimating He-Ne laser beam into the multi-spot diffraction pattern which forms the virtual electrodes as the TiOPc-coating surface was illuminated by the multi-spot diffraction light pattern. HepG2 cells were trapped at the spot centers and polystyrene beads were trapped within the dim region of the illuminated image. The simulation results of light-induced electric field and a Fresnel diffraction image illustrated the distribution of trapped microparticles. The HepG2 morphology change, adhesion, and growth during a 5-day culture period demonstrated the cell viability through our manipulation. The power density inducing DEP phenomena, the characteristics of the thin TiOPc coating layer, the operating ac voltage/frequency, the sandwiched medium, the temperature rise due to the ac electric fields and the illuminating patterns are discussed in this paper. This concept of utilizing laser diffraction images to generate virtual electrodes on our TiOPc-based optoelectronic DEP chip extends the applications of optoelectronic dielectrophoretic manipulation. PMID:23925640

  19. Organic-inorganic hybrid lead halide perovskites for optoelectronic and electronic applications.

    PubMed

    Zhao, Yixin; Zhu, Kai

    2016-02-01

    Organic and inorganic hybrid perovskites (e.g., CH(3)NH(3)PbI(3)), with advantages of facile processing, tunable bandgaps, and superior charge-transfer properties, have emerged as a new class of revolutionary optoelectronic semiconductors promising for various applications. Perovskite solar cells constructed with a variety of configurations have demonstrated unprecedented progress in efficiency, reaching about 20% from multiple groups after only several years of active research. A key to this success is the development of various solution-synthesis and film-deposition techniques for controlling the morphology and composition of hybrid perovskites. The rapid progress in material synthesis and device fabrication has also promoted the development of other optoelectronic applications including light-emitting diodes, photodetectors, and transistors. Both experimental and theoretical investigations on organic-inorganic hybrid perovskites have enabled some critical fundamental understandings of this material system. Recent studies have also demonstrated progress in addressing the potential stability issue, which has been identified as a main challenge for future research on halide perovskites. Here, we review recent progress on hybrid perovskites including basic chemical and crystal structures, chemical synthesis of bulk/nanocrystals and thin films with their chemical and physical properties, device configurations, operation principles for various optoelectronic applications (with a focus on solar cells), and photophysics of charge-carrier dynamics. We also discuss the importance of further understanding of the fundamental properties of hybrid perovskites, especially those related to chemical and structural stabilities. PMID:26645733

  20. Two-Dimensional SiS Layers with Promising Electronic and Optoelectronic Properties: Theoretical Prediction.

    PubMed

    Yang, Ji-Hui; Zhang, Yueyu; Yin, Wan-Jian; Gong, X G; Yakobson, Boris I; Wei, Su-Huai

    2016-02-10

    Two-dimensional (2D) semiconductors can be very useful for novel electronic and optoelectronic applications because of their good material properties. However, all current 2D materials have shortcomings that limit their performance. As a result, new 2D materials are highly desirable. Using atomic transmutation and differential evolution global optimization methods, we identified two group IV-VI 2D materials, Pma2-SiS and silicene sulfide. Pma2-SiS is found to be both chemically, energetically, and thermally stable. Most importantly, Pma2-SiS has shown good electronic and optoelectronic properties, including direct bandgaps suitable for solar cells, good mobility for nanoelectronics, good flexibility of property tuning by layer control and applied strain, and good air stability as well. Therefore, Pma2-SiS is expected to be a promising 2D material in the field of 2D electronics and optoelectronics. The designing principles demonstrated in identifying these two tantalizing examples have great potential to accelerate the finding of new functional 2D materials.

  1. Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires.

    PubMed

    Yang, Qing; Wu, Yuanpeng; Liu, Ying; Pan, Caofeng; Wang, Zhong Lin

    2014-02-21

    The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison will not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas.

  2. Fast terahertz optoelectronic amplitude modulator based on plasmonic metamaterial antenna arrays and graphene

    NASA Astrophysics Data System (ADS)

    Jessop, David S.; Sol, Christian W. O.; Xiao, Long; Kindness, Stephen J.; Braeuninger-Weimer, Philipp; Lin, Hungyen; Griffiths, Jonathan P.; Ren, Yuan; Kamboj, Varun S.; Hofmann, Stephan; Zeitler, J. Axel; Beere, Harvey E.; Ritchie, David A.; Degl'Innocenti, Riccardo

    2016-02-01

    The growing interest in terahertz (THz) technologies in recent years has seen a wide range of demonstrated applications, spanning from security screening, non-destructive testing, gas sensing, to biomedical imaging and communication. Communication with THz radiation offers the advantage of much higher bandwidths than currently available, in an unallocated spectrum. For this to be realized, optoelectronic components capable of manipulating THz radiation at high speeds and high signal-to-noise ratios must be developed. In this work we demonstrate a room temperature frequency dependent optoelectronic amplitude modulator working at around 2 THz, which incorporates graphene as the tuning medium. The architecture of the modulator is an array of plasmonic dipole antennas surrounded by graphene. By electrostatically doping the graphene via a back gate electrode, the reflection characteristics of the modulator are modified. The modulator is electrically characterized to determine the graphene conductivity and optically characterization, by THz time-domain spectroscopy and a single-mode 2 THz quantum cascade laser, to determine the optical modulation depth and cut-off frequency. A maximum optical modulation depth of ~ 30% is estimated and is found to be most (least) sensitive when the electrical modulation is centered at the point of maximum (minimum) differential resistivity of the graphene. A 3 dB cut-off frequency > 5 MHz, limited only by the area of graphene on the device, is reported. The results agree well with theoretical calculations and numerical simulations, and demonstrate the first steps towards ultra-fast, graphene based THz optoelectronic devices.

  3. Two-Dimensional CH₃NH₃PbI₃ Perovskite: Synthesis and Optoelectronic Application.

    PubMed

    Liu, Jingying; Xue, Yunzhou; Wang, Ziyu; Xu, Zai-Quan; Zheng, Changxi; Weber, Bent; Song, Jingchao; Wang, Yusheng; Lu, Yuerui; Zhang, Yupeng; Bao, Qiaoliang

    2016-03-22

    Hybrid organic-inorganic perovskite materials have received substantial research attention due to their impressively high performance in photovoltaic devices. As one of the oldest functional materials, it is intriguing to explore the optoelectronic properties in perovskite after reducing it into a few atomic layers in which two-dimensional (2D) confinement may get involved. In this work, we report a combined solution process and vapor-phase conversion method to synthesize 2D hybrid organic-inorganic perovskite (i.e., CH3NH3PbI3) nanocrystals as thin as a single unit cell (∼1.3 nm). High-quality 2D perovskite crystals have triangle and hexagonal shapes, exhibiting tunable photoluminescence while the thickness or composition is changed. Due to the high quantum efficiency and excellent photoelectric properties in 2D perovskites, a high-performance photodetector was demonstrated, in which the current can be enhanced significantly by shining 405 and 532 nm lasers, showing photoresponsivities of 22 and 12 AW(-1) with a voltage bias of 1 V, respectively. The excellent optoelectronic properties make 2D perovskites building blocks to construct 2D heterostructures for wider optoelectronic applications.

  4. Preparation, characterization and optoelectronic properties of nanodiamonds doped zinc oxide nanomaterials by a ball milling technique

    NASA Astrophysics Data System (ADS)

    Ullah, Hameed; Sohail, Muhammad; Malik, Uzma; Ali, Naveed; Bangash, Masroor Ahmad; Nawaz, Mohsan

    2016-07-01

    Zinc oxide (ZnO) is one of the very important metal oxides (MOs) for applications in optoelectronic devices which work in the blue and UV regions. However, to meet the challenges of obtaining ZnO nanomaterials suitable for practical applications, various modifications in physico-chemical properties are highly desirable. One of the ways adopted for altering the properties is to synthesize composite(s) of ZnO with various reinforcements. Here we report on the tuning of optoelectronic properties of ZnO upon doping by nanodiamonds (NDs) using the ball milling technique. A varying weight percent (wt.%) of NDs were ball milled for 2 h with ZnO nanoparticles prepared by a simple precipitation method. The effects of different parameters, the calcination temperature of ZnO, wt.% of NDs and mechanical milling upon the optoelectronic properties of the resulting ZnO-NDs nanocomposites have been investigated. The ZnO-NDs nanocomposites were characterized by IR spectroscopy, powder x-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The UV-vis spectroscopy revealed the alteration in the bandgap energy (Eg ) of ZnO as a function of the calcination temperature of ZnO, changing the concentration of NDs, and mechanical milling of the resulting nanocomposites. The photoluminescence (PL) spectroscopy showed a decrease in the deep level emission (DLE) peaks and an increase in near-band-edge transition peaks as a result of the increasing concentration of NDs. The decrease in DLE and increase in band to band transition peaks were due to the strong interaction between the NDs and the Zn+; consequently, the Zn+ concentration decreased on the interstitial sites.

  5. Heterogeneous integration technology for hybrid optoelectronic and electronic device and module fabrication

    NASA Astrophysics Data System (ADS)

    Jin, Michael Sungchun

    Various forms of optical computing architectures have promised enhanced processing capabilities well beyond the limits of traditional VLSI technology during the past decade. However, the progress toward realizing this vision has been severely limited by the lack of mature technology to fabricate heterogeneously integrated optoelectronic transceiver arrays (consisting of VLSI electronics with optoelectronic devices) that are necessary to link the functionality of photonic input/output devices with electronic processors. This dissertation describes a research effort that addressed this need by exploring innovative, yet highly manufacturable integration approaches that can be utilized to fabricate hybrid optoelectronic transceivers by integrating thin silicon device layers on bulk electro-optic (e.g. lead lanthanum zirconate titanate- PLZT) and other host substrates. The two integration techniques developed are: (1) B& P (Bond and Processing) technology involving bonding of bulk-quality thin silicon layer to PLZT followed by low temperature NMOS processing and (2) DDB (Direct-Device Bonding) technology, where circuit layer fabricated in SOI-silicon is thinned and bonded directly to a PLZT substrate. Characteristics of electronic circuits and modulators in integrated Si/PLZT SLMs are measured to be comparable to that of reference devices fabricated in bulk silicon and PLZT substrates. The application of the developed integration technology specifically toward fabricating Si/PLZT spatial light modulator is examined in detail. The developed device layer grafting technology based on chemo-mechanical lapping and reactive ion etching processes can be applied to assemble miniature ``mixed technology'' systems consisting of devices fabricated by different manufacturing processes (e.g. CMOS, MEMS, VCSEL and GaAs processes) in a monolithic fashion. The latter half of the thesis details experimental

  6. Study of application and key technology of the high-energy laser weapon in optoelectronic countermeasure

    NASA Astrophysics Data System (ADS)

    Qu, Zhou; Xing, Hao; Wang, Dawei; Wang, Qiugui

    2015-10-01

    High-energy Laser weapon is a new-style which is developing rapidly nowadays. It is a one kind of direction energy weapon which can destroy the targets or make them invalid. High-energy Laser weapon has many merits such as concentrated energy, fast transmission, long operating range, satisfied precision, fast shift fire, anti-electromagnetic interference, reusability, cost-effectiveness. High-energy Laser weapon has huge potential for modern warfare since its laser beam launch attack to the target by the speed of light. High-energy Laser weapon can be deployed by multiple methods such as skyborne, carrier borne, vehicle-mounted, foundation, space platform. Besides the connection with command and control system, High-energy Laser weapon is consist of high-energy laser and beam steering. Beam steering is comprised of Large diameter launch system and Precision targeting systems. Meanwhile, beam steering includes the distance measurement of target location, detection system of television and infrared sensor, adaptive optical system of Laser atmospheric distortion correction. The development of laser technology is very fast in recent years. A variety of laser sources have been regarded as the key component in many optoelectronic devices. For directed energy weapon, the progress of laser technology has greatly improved the tactical effectiveness, such as increasing the range and strike precision. At the same time, the modern solid-state laser has become the ideal optical source for optical countermeasure, because it has high photoelectric conversion efficiency and small volume or weight. However, the total performance is limited by the mutual cooperation between different subsystems. The optical countermeasure is a complex technique after many years development. The key factor to evaluate the laser weapon can be formulated as laser energy density to target. This article elaborated the laser device technology of optoelectronic countermeasure and Photoelectric tracking

  7. Nanophotonics for Optoelectronic Devices: Extrinsic Silicon Photonic Receivers and Organic Photovoltaics

    NASA Astrophysics Data System (ADS)

    Grote, Richard R.

    The demand for high data rate communications and renewable energy sources has led to new materials and platforms for optoelectronic devices, which require nanometer scale feature sizes. Devices that operate in the visible and near-infrared commonly have active areas with dimensions on the order of the diffraction limit ( l2n , where lambda is the free space wavelength and n is the index of refraction), for which the ray optics modeling techniques and bulk focusing optics traditionally used in optoelectronic device design are no longer applicable. In this subwavelength regime, nanophotonic light-trapping strategies are required to localize electromagnetic fields in the active area. This dissertation details the application of nanophotonics to two optoelectronic systems: extrinsic photodetectors for silicon photonics and light-trapping in organic photovoltaics. Error-free reception of 10 Gb/s data at lambda = 1.55 mum is demonstrated with a Si+ ion-implanted silicon waveguide photodiode. To mitigate the relatively small absorption coefficient of ion-implanted silicon, resonant cavity enhancement using in-line Fabry-Perot and 1D photonic crystal cavities, as well as slow light enhancement using a coupled resonator optical waveguide are discussed. The extension of these photodiodes to the mid-infrared is demonstrated using Zn+ implantation to detect over a range of lambda = 2.2-2.4 mum, and a new method for modulation and switching in integrated optics by using interference in a resonant cavity, termed coherent perfect loss (CPL), is presented. Finally, the upper limit of nanophotonic light trapping is derived for organic photovoltaics with material anisotropy included.

  8. Preparation, characterization and optoelectronic properties of nanodiamonds doped zinc oxide nanomaterials by a ball milling technique

    NASA Astrophysics Data System (ADS)

    Ullah, Hameed; Sohail, Muhammad; Malik, Uzma; Ali, Naveed; Bangash, Masroor Ahmad; Nawaz, Mohsan

    2016-07-01

    Zinc oxide (ZnO) is one of the very important metal oxides (MOs) for applications in optoelectronic devices which work in the blue and UV regions. However, to meet the challenges of obtaining ZnO nanomaterials suitable for practical applications, various modifications in physico-chemical properties are highly desirable. One of the ways adopted for altering the properties is to synthesize composite(s) of ZnO with various reinforcements. Here we report on the tuning of optoelectronic properties of ZnO upon doping by nanodiamonds (NDs) using the ball milling technique. A varying weight percent (wt.%) of NDs were ball milled for 2 h with ZnO nanoparticles prepared by a simple precipitation method. The effects of different parameters, the calcination temperature of ZnO, wt.% of NDs and mechanical milling upon the optoelectronic properties of the resulting ZnO–NDs nanocomposites have been investigated. The ZnO–NDs nanocomposites were characterized by IR spectroscopy, powder x-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The UV-vis spectroscopy revealed the alteration in the bandgap energy (Eg ) of ZnO as a function of the calcination temperature of ZnO, changing the concentration of NDs, and mechanical milling of the resulting nanocomposites. The photoluminescence (PL) spectroscopy showed a decrease in the deep level emission (DLE) peaks and an increase in near-band-edge transition peaks as a result of the increasing concentration of NDs. The decrease in DLE and increase in band to band transition peaks were due to the strong interaction between the NDs and the Zn+; consequently, the Zn+ concentration decreased on the interstitial sites.

  9. Toward polymeric materials with optoelectronic properties tunable by mechanical and optical stimuli

    NASA Astrophysics Data System (ADS)

    Harvey, Christopher P.

    Stimuli responsive materials have properties that can be reversibly altered through treatment with a controllable external factor such as heat, light, or mechanical force. The work presented herein was focused on creating materials with optoelectronic properties tunable through mechanical stress or light irradiation. The optical properties of mechanochromic systems change under mechanical stress. There are several ways of achieving this response. Physical deformation may disrupt electronic interactions that have been established within the material or it may change the spatial arrangement of internal components in such a way as to alter their interaction with light. Breaking and reestablishing pi-pi interactions between conjugated units within elastic polymers may also lead to a mechanochromic response. Systems which respond to deformation with reversible, visible color changes may be useful for stress detection within materials. Segmented polyurethanes are elastomers composed of amorphous, saturated chain soft segments and rigid, more crystalline hard domains. Within aggregates of hard domains pi-pi interactions may form and result in alteration of the optoelectronic properties of the system. These electronic interactions may be disrupted by mechanical deformation leading to an observable mechanochromic response. A series of oligothiophene diols and diamines, as well as a naphthalene diimide diol, have been synthesized for incorporation into the hard domains of segmented polyurethanes and polyureas using long poly(tetramethylene oxide) chains as soft segments in order to evaluate such systems for possible mechanochromic response. Photochromic molecules undergo reversible changes in properties in response to irradiation with light. These compounds are found in a variety of natural pigment systems and organic electronic applications. The observed changes in properties are the results of rearrangements within the molecules which alter their optoelectronic

  10. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    SciTech Connect

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated

  11. Synthesis and characterization of ZnO nanostructured film for optoelectronic applications

    SciTech Connect

    Kumar, Vijay E-mail: sanjeev04101977@gmail.com; Singh, Harpreetpal

    2015-05-15

    ZnO nanostructured film is synthesized by solution combustion technique. X-ray diffraction (XRD) studies show that preferred orientation is along (101) confirming the hexagonal wurtzite phase and no secondary phase is observed. The rietveld refinement of the XRD data was used to calculate different lattice parameters. I-V characterization of ZnO film shows non linear behavior. These ZnO films are photosensitive, may be due to defect states. This property of these films can be utilized in optoelectronic applications.

  12. Recent Developments of an Opto-Electronic THz Spectrometer for High-Resolution Spectroscopy

    PubMed Central

    Hindle, Francis; Yang, Chun; Mouret, Gael; Cuisset, Arnaud; Bocquet, Robin; Lampin, Jean-François; Blary, Karine; Peytavit, Emilien; Akalin, Tahsin; Ducournau, Guillaume

    2009-01-01

    A review is provided of sources and detectors that can be employed in the THz range before the description of an opto-electronic source of monochromatic THz radiation. The realized spectrometer has been applied to gas phase spectroscopy. Air-broadening coefficients of HCN are determined and the insensitivity of this technique to aerosols is demonstrated by the analysis of cigarette smoke. A multiple pass sample cell has been used to obtain a sensitivity improvement allowing transitions of the volatile organic compounds to be observed. A solution to the frequency metrology is presented and promises to yield accurate molecular line center measurements. PMID:22291552

  13. Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

    NASA Technical Reports Server (NTRS)

    Richard, M. A.; Claspy, P. C.; Bhasin, K. B.; Bendett, M. B.

    1990-01-01

    Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs monolithic microwave integrated circuit (MMIC) based phased array antennas. The performance of a hybrid GaAs optoelectronic integrated circuit (OEIC) is described, as well as its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 30b Mbps. The performance characteristics and potential applications of the device are presented.

  14. Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

    NASA Technical Reports Server (NTRS)

    Richard, M. A.; Claspy, P. C.; Bhasin, K. B.; Bendett, M. P.

    1990-01-01

    Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs MMIC-based phased array antennas. This paper describes the performance of a hybrid GaAs optoelectronic integrated circuit (OEIC), along with a description of its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 305 Mbps. The performance characteristics as well as potential applications of the device are presented.

  15. Displacement measurement using an optoelectronic oscillator with an intra-loop Michelson interferometer.

    PubMed

    Lee, Jehyun; Park, Sooyoung; Seo, Dae Han; Yim, Sin Hyuk; Yoon, Seokchan; Cho, D

    2016-09-19

    We report on measurement of small displacements with sub-nanometer precision using an optoelectronic oscillator (OEO) with an intra-loop Michelson interferometer. In comparison with conventional homodyne and heterodyne detection methods, where displacement appears as a power change or a phase shift, respectively, in the OEO detection, the displacement produces a shift in the oscillation frequency. In comparison with typical OEO sensors, where the frequency shift is proportional to the OEO oscillation frequency in radio-frequency domain, the frequency shift in our method with an intra-loop interferometer is proportional to an optical frequency. We constructed a hybrid apparatus and compared characteristics of the OEO and heterodyne detection methods.

  16. Fully differential optoelectronic integrated receiver implemented by 0.35 μm standard CMOS process

    NASA Astrophysics Data System (ADS)

    Yu, Chang-Liang; Mao, Lu-Hong; Xiao, Xin-Dong; Xie, Sheng; Zhang, Shi-Lin

    2008-11-01

    A high-bandwidth, high-sensitivity fully differential optoelectronic integrated receiver is implemented in a chartered 3.3 V standard 0.35 μm analog CMOS process. To convert the incident light into a pair of fully differential photo-currents, a novel fully differential photodetector is proposed, which is composed of two completely identical photodiodes. The measurement results show that the receiver achieves a 1.11 GHz 3 dB bandwidth and a -13 dBm sensitivity for a 10-12 bit error at 1.5 Gb/s data rate under illumination by 850 nm incident lights.

  17. In-P based optoelectronic components for measurements, communications, and computers

    SciTech Connect

    Ishak, W.S.

    1996-12-31

    Optoelectronic and electronic devices will play a key role in the emerging information age. In particular, devices based on InP materials and operating in the 1--2 {micro}m wavelength regime are becoming a necessity for applications in long-haul fiber-optic communications, local area networks and lightwave test and measurement instrumentation. Some of these applications require very high-performance devices and, hence, are not very sensitive to cost. On the other hand, many other applications (for example, computer interconnects), cost is the most important parameter and large-scale manufacturing techniques must be implemented. Examples for both applications will be addressed.

  18. Programmable manipulation of motile cells in optoelectronic tweezers using a grayscale image

    NASA Astrophysics Data System (ADS)

    Choi, Wonjae; Nam, Seong-Won; Hwang, Hyundoo; Park, Sungsu; Park, Je-Kyun

    2008-10-01

    This paper describes a grayscale optoelectronic tweezers (OET) which allows adjustment of the electric field strength at each position of OET. A grayscale light image was used to pattern vertical electric field strength on an OET. As an electric field depends on the brightness at each point, the brighter light patterns generate the stronger electric field in the OET. Its feasibility for application to cell manipulation was demonstrated by aligning highly motile protozoan cells in vertical direction. Depending on the brightness of each pixel, the behaviors of aligned cells varied due to the different electric field strength to each cell.

  19. Reservoir computing with a slowly modulated mask signal for preprocessing using a mutually coupled optoelectronic system

    NASA Astrophysics Data System (ADS)

    Tezuka, Miwa; Kanno, Kazutaka; Bunsen, Masatoshi

    2016-08-01

    Reservoir computing is a machine-learning paradigm based on information processing in the human brain. We numerically demonstrate reservoir computing with a slowly modulated mask signal for preprocessing by using a mutually coupled optoelectronic system. The performance of our system is quantitatively evaluated by a chaotic time series prediction task. Our system can produce comparable performance with reservoir computing with a single feedback system and a fast modulated mask signal. We showed that it is possible to slow down the modulation speed of the mask signal by using the mutually coupled system in reservoir computing.

  20. Optoelectronic characterization of carrier extraction in a hot carrier photovoltaic cell structure

    NASA Astrophysics Data System (ADS)

    Dimmock, James A. R.; Kauer, Matthias; Smith, Katherine; Liu, Huiyun; Stavrinou, Paul N.; Ekins-Daukes, Nicholas J.

    2016-07-01

    A hot carrier photovoltaic cell requires extraction of electrons on a timescale faster than they can lose energy to the lattice. We optically and optoelectronically characterize two resonant tunneling structures, showing their compatability with hot carrier photovoltaic operation, demonstrating structural and carrier extraction properties necessary for such a device. In particular we use time resolved and temperature dependent photoluminescence to determine extraction timescales and energy levels in the structures and demonstrate fast carrier extraction by tunneling. We also show that such devices are capable of extracting photo-generated electrons at high carrier densities, with an open circuit voltage in excess of 1 V.

  1. Organic/inorganic-polyimide nanohybrid materials for advanced opto-electronic applications

    NASA Astrophysics Data System (ADS)

    Ando, Shinji

    2009-02-01

    Nano-hybridization techniques based on the pyrolytic reactions of organo-soluble metallic precursors dissolved in poly(amic acid)s followed by spontaneous precipitation of metal/inorganic nano-particles in solid polyimide (PI) films is facile and effective for functionalization of PI optical and electronic materials. The organic/inorganinc PI nanohybrid materials, which were recently developed by the authors, having a variety of functionalities such as a) high refractive indices, b) low refractive indices, c) controlled thermo-optical property and its anisotropy, d) high polarizing property, and e) high thermal conductivity are reviewed with future prospects on their advanced opto-electronic applications.

  2. Novel nanostructures of ZnO for nanoscale photonics, optoelectronics, piezoelectricity, and sensing

    NASA Astrophysics Data System (ADS)

    Wang, Z. L.

    2007-07-01

    Wurtzite-structured semiconductors such as ZnO, GaN, AlN, CdSe and ZnS are important materials for nanoscale devices. Zinc oxide, for example, is a unique material that exhibits semiconducting, piezoelectric, and pyroelectric properties. Using a solid vapor phase thermal sublimation technique, nanocombs, nanorings, nanohelixes/nanosprings, nanobows, nanobelts, nanowires, and nanocages of ZnO have been grown under specific growth conditions. This paper is about the synthesis, structure, growth mechanisms, and potential applications of these nanostructures in optoelectronics, sensors, transducers, and biomedical science.

  3. Ultraminiaturized Photovoltaic and Radio Frequency Powered Optoelectronic Systems for Wireless Optogenetics

    PubMed Central

    Banks, Anthony; McCall, Jordan G.; Siuda, Edward R.; Schmidt, Martin J.; Chung, Ha Uk; Noh, Kyung Nim; Mun, Jonathan Guo-Han; Rhodes, Justin; Bruchas, Michael R.

    2016-01-01

    Wireless control and power harvesting systems that operate injectable, cellular-scale optoelectronic components provide important demonstrated capabilities in neuromodulatory techniques such as optogenetics. Here we report a radio frequency (RF) control/harvesting device that offers dramatically reduced size, decreased weight and improved efficiency compared to previously reported technologies. Combined use of this platform with ultrathin, multijunction, high efficiency solar cells allows for hundred-fold reduction of transmitted RF power, which greatly enhances the wireless coverage. Optogenetics studies with social groups of mice demonstrate the utility of these systems, and suggest their potential for widespread use in neuroscience. PMID:26193450

  4. Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics.

    PubMed

    Madéo, Julien; Margiolakis, Athanasios; Zhao, Zhen-Yu; Hale, Peter J; Man, Michael K L; Zhao, Quan-Zhong; Peng, Wei; Shi, Wang-Zhou; Dani, Keshav M

    2015-07-15

    We report on the first terahertz (THz) emitter based on femtosecond-laser-ablated gallium arsenide (GaAs), demonstrating a 65% enhancement in THz emission at high optical power compared to the nonablated device. Counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. We understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. Our results show that laser ablation allows for efficient and cost-effective optoelectronic THz devices via the manipulation of fundamental properties of materials.

  5. Conformational, Optoelectronic and Vibrational Properties of the Entacapone Molecule: A Quantum Chemistry Study.

    PubMed

    Frazão, N F; Albuquerque, E L; Fulco, U L; Mauriz, P W; Azevedo, D L

    2016-05-01

    A quantum chemistry study were carried out looking for the conformational, optoelectronic and vibrational properties of the entacapone molecule, an efficient drug used in the Parkinson's disease treatment. Classical annealing was performed to explore the entacapone's molecular configurations, searching for optimal geometries. The quantum optimization calculations were made using three different functional combination levels of the density functional theory (DFT). The structural data (bond length, bond and torsion angles), charge population analysis (absorption spectra) and molecular orbital study (HOMO and LUMO) were obtained considering the lower energy optimized conformation of the entacapone molecule. Furthermore, a complete assignment of the harmonic vibrational frequencies were achieved through their infrared (IR) and Raman spectra.

  6. Photonic information processing beyond Turing: an optoelectronic implementation of reservoir computing.

    PubMed

    Larger, L; Soriano, M C; Brunner, D; Appeltant, L; Gutierrez, J M; Pesquera, L; Mirasso, C R; Fischer, I

    2012-01-30

    Many information processing challenges are difficult to solve with traditional Turing or von Neumann approaches. Implementing unconventional computational methods is therefore essential and optics provides promising opportunities. Here we experimentally demonstrate optical information processing using a nonlinear optoelectronic oscillator subject to delayed feedback. We implement a neuro-inspired concept, called Reservoir Computing, proven to possess universal computational capabilities. We particularly exploit the transient response of a complex dynamical system to an input data stream. We employ spoken digit recognition and time series prediction tasks as benchmarks, achieving competitive processing figures of merit.

  7. Broadly tunable, low timing jitter, high repetition rate optoelectronic comb generator

    PubMed Central

    Metcalf, A. J.; Quinlan, F.; Fortier, T. M.; Diddams, S. A.; Weiner, A. M.

    2016-01-01

    We investigate the low timing jitter properties of a tunable single-pass optoelectronic frequency comb generator. The scheme is flexible in that both the repetition rate and center frequency can be continuously tuned. When operated with 10 GHz comb spacing, the integrated residual pulse-to-pulse timing jitter is 11.35 fs (1 Hz to 10 MHz) with no feedback stabilization. The corresponding phase noise at 1 Hz offset from the photodetected 10 GHz carrier is −100 dBc/Hz. PMID:26865734

  8. Radiation hardness of optoelectronic components for the optical readout of the ATLAS inner detector

    NASA Astrophysics Data System (ADS)

    Hou, S.; Ishii, K.; Itoh, M.; Sakemi, Y.; Su, D. S.; Su, T. T.; Teng, P. K.; Yoshida, H. P.

    2011-04-01

    Optical links are used for data transmission of the ATLAS inner detector in a radiation hazard environment at the Large Hadron Collider (LHC). The radiation tolerance is studied for the opto-electronics of GaAs VCSEL and epitaxial Si PIN with 30 and 70 MeV protons at CYRIC. High speed Si and GaAs PIN photo-diodes are also investigated for upgrade to super-LHC. The annealing of GaAs VCSEL by charge injection is characterized. The GaAs devices show approximately linear degradations to fluence. The dependence on proton energy is compared to the Non-Ionizing Energy Loss calculations.

  9. Probing photonic and optoelectronic structures by apertureless scanning near-field optical microscopy.

    PubMed

    Bachelot, Renaud; Lerondel, Gilles; Blaize, Sylvain; Aubert, Sebastien; Bruyant, Aurelien; Royer, Pascal

    2004-08-01

    This report presents the Apertureless Scanning Optical Near-Field Microscope as a powerful tool for the characterization of modern optoelectronic and photonic components with sub-wavelength resolution. We present an overview of the results we obtained in our laboratory over the past few years. By significant examples, it is shown that this specific probe microscopy allows for in situ local quantitative study of semiconductor lasers in operation, integrated optical waveguides produced by ion exchange (single channel or Y junction), and photonic structures.

  10. Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

    DOEpatents

    Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

    2014-04-01

    A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

  11. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

    NASA Astrophysics Data System (ADS)

    Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He-Hau, Jr.

    2016-09-01

    Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells.

  12. Fused thiophene-based conjugated polymers and their use in optoelectronic devices

    SciTech Connect

    Facchetti, Antonio; Marks, Tobin J; Takai, Atsuro; Seger, Mark; Chen, Zhihua

    2015-11-03

    The present teachings relate to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

  13. Mixed-mode oscillations via canard explosions in light-emitting diodes with optoelectronic feedback.

    PubMed

    Marino, F; Ciszak, M; Abdalah, S F; Al-Naimee, K; Meucci, R; Arecchi, F T

    2011-10-01

    Chaotically spiking attractors in semiconductor lasers with optoelectronic feedback have been recently observed to be the result of canard phenomena in three-dimensional phase space (incomplete homoclinic scenarios). Since light-emitting diodes display the same dynamics and are much more easily controllable, we use one of these systems to complete the attractor analysis demonstrating experimentally and theoretically the occurrence of complex sequences of periodic mixed-mode oscillations. In particular, we investigate the transition between periodic and chaotic mixed-mode states and analyze the effects of the unavoidable experimental noise on these transitions. PMID:22181318

  14. Mixed-mode oscillations via canard explosions in light-emitting diodes with optoelectronic feedback

    NASA Astrophysics Data System (ADS)

    Marino, F.; Ciszak, M.; Abdalah, S. F.; Al-Naimee, K.; Meucci, R.; Arecchi, F. T.

    2011-10-01

    Chaotically spiking attractors in semiconductor lasers with optoelectronic feedback have been recently observed to be the result of canard phenomena in three-dimensional phase space (incomplete homoclinic scenarios). Since light-emitting diodes display the same dynamics and are much more easily controllable, we use one of these systems to complete the attractor analysis demonstrating experimentally and theoretically the occurrence of complex sequences of periodic mixed-mode oscillations. In particular, we investigate the transition between periodic and chaotic mixed-mode states and analyze the effects of the unavoidable experimental noise on these transitions.

  15. Optoelectronic vision

    NASA Astrophysics Data System (ADS)

    Ren, Chunye; Parel, Jean-Marie A.

    1993-06-01

    Scientists have searched every discipline to find effective methods of treating blindness, such as using aids based on conversion of the optical image, to auditory or tactile stimuli. However, the limited performance of such equipment and difficulties in training patients have seriously hampered practical applications. A great edification has been given by the discovery of Foerster (1929) and Krause & Schum (1931), who found that the electrical stimulation of the visual cortex evokes the perception of a small spot of light called `phosphene' in both blind and sighted subjects. According to this principle, it is possible to invite artificial vision by using stimulation with electrodes placed on the vision neural system, thereby developing a prosthesis for the blind that might be of value in reading and mobility. In fact, a number of investigators have already exploited this phenomena to produce a functional visual prosthesis, bringing about great advances in this area.

  16. The optoelectronic role of chlorine in CH3NH3PbI3(Cl)-based perovskite solar cells

    PubMed Central

    Chen, Qi; Zhou, Huanping; Fang, Yihao; Stieg, Adam Z.; Song, Tze-Bin; Wang, Hsin-Hua; Xu, Xiaobao; Liu, Yongsheng; Lu, Shirong; You, Jingbi; Sun, Pengyu; McKay, Jeff; Goorsky, Mark S.; Yang, Yang

    2015-01-01

    Perovskite photovoltaics offer a compelling combination of extremely low-cost, ease of processing and high device performance. The optoelectronic properties of the prototypical CH3NH3PbI3 can be further adjusted by introducing other extrinsic ions. Specifically, chlorine incorporation has been shown to affect the morphological development of perovksite films, which results in improved optoelectronic characteristics for high efficiency. However, it requires a deep understanding to the role of extrinsic halide, especially in the absence of unpredictable morphological influence during film growth. Here we report an effective strategy to investigate the role of the extrinsic ion in the context of optoelectronic properties, in which the morphological factors that closely correlate to device performance are mostly decoupled. The chlorine incorporation is found to mainly improve the carrier transport across the heterojunction interfaces, rather than within the perovskite crystals. Further optimization according this protocol leads to solar cells achieving power conversion efficiency of 17.91%. PMID:26068804

  17. Optoelectronics, Theory and Defect Physics of Zn-IV Nitride Semiconductors

    NASA Astrophysics Data System (ADS)

    Narang, Prineha; Chen, Shiyou; Mangu, Aashrita; Cooper, Jason; Gul, Sheraz; Yano, Junko; Wang, Lin-Wang; Lewis, Nathan; Atwater, Harry

    2014-03-01

    ZnSnxGe1-xN2 alloys with optical band gaps ranging from 2-3.1eV can be tuned to span a large portion of the solar spectrum, and could therefore be a viable earth-abundant light absorber and replacement for InGaN in nitride optoelectronic devices. They exhibit local order as demonstrated via X-ray absorption fine structure spectroscopy (EXAFS) and a linear relationship between the (002) peak position and composition in XRD studies. The bowing parameter is 0.29 eV for the measured band gaps of ZnSn1-xGexN2, significantly smaller than that of In1-xGaxN, indicating that the ZnSn1-xGexN2 alloy band gaps can be tuned almost linearly by controlling the Sn/Ge composition. In this presentation we show theoretical studies of the optoelectronic behavior and defect physics of Zn(Sn,Ge)N2 series and experimental investigations via X-ray absorption and emission spectroscopy to probe the conduction and valence-band partial density of states. Band structure calculations from different methods will be shown in comparison with the experimental optical properties. Resonant inelastic scattering studies of the Zn(Sn,Ge)N2 lattice will be presented with their carrier dynamics obtained from pump-probe spectroscopy.

  18. Identifying airborne metal particles sources near an optoelectronic and semiconductor industrial park

    NASA Astrophysics Data System (ADS)

    Chen, Ho-Wen; Chen, Wei-Yea; Chang, Cheng-Nan; Chuang, Yen-Hsun; Lin, Yu-Hao

    2016-06-01

    The recently developed Central Taiwan Science Park (CTSP) in central Taiwan is home to an optoelectronic and semiconductor industrial cluster. Therefore, exploring the elemental compositions and size distributions of airborne particles emitted from the CTSP would help to prevent pollution. This study analyzed size-fractionated metal-rich particle samples collected in upwind and downwind areas of CTSP during Jan. and Oct. 2013 by using micro-orifice uniform deposited impactor (MOUDI). Correlation analysis, hierarchical cluster analysis and particle mass-size distribution analysis are performed to identify the source of metal-rich particle near the CTSP. Analyses of elemental compositions and particle size distributions emitted from the CTSP revealed that the CTSP emits some metals (V, As, In Ga, Cd and Cu) in the ultrafine particles (< 1 μm). The statistical analysis combines with the particle mass-size distribution analysis could provide useful source identification information. In airborne particles with the size of 0.32 μm, Ga could be a useful pollution index for optoelectronic and semiconductor emission in the CTSP. Meanwhile, the ratios of As/Ga concentration at the particle size of 0.32 μm demonstrates that humans near the CTSP would be potentially exposed to GaAs ultrafine particles. That is, metals such as Ga and As and other metals that are not regulated in Taiwan are potentially harmful to human health.

  19. Light Manipulation for Organic Optoelectronics Using Bio-inspired Moth's Eye Nanostructures

    PubMed Central

    Zhou, Lei; Ou, Qing-Dong; Chen, Jing-De; Shen, Su; Tang, Jian-Xin; Li, Yan-Qing; Lee, Shuit-Tong

    2014-01-01

    Organic-based optoelectronic devices, including light-emitting diodes (OLEDs) and solar cells (OSCs) hold great promise as low-cost and large-area electro-optical devices and renewable energy sources. However, further improvement in efficiency remains a daunting challenge due to limited light extraction or absorption in conventional device architectures. Here we report a universal method of optical manipulation of light by integrating a dual-side bio-inspired moth's eye nanostructure with broadband anti-reflective and quasi-omnidirectional properties. Light out-coupling efficiency of OLEDs with stacked triple emission units is over 2 times that of a conventional device, resulting in drastic increase in external quantum efficiency and current efficiency to 119.7% and 366 cd A−1 without introducing spectral distortion and directionality. Similarly, the light in-coupling efficiency of OSCs is increased 20%, yielding an enhanced power conversion efficiency of 9.33%. We anticipate this method would offer a convenient and scalable way for inexpensive and high-efficiency organic optoelectronic designs. PMID:24509524

  20. Tailoring the Optoelectronic Properties of Nano-Metal Oxides Using Anthocyanins and Lanthanide.

    PubMed

    Al Rez, Mohammed Fayez; Choudhury, Trisha; Islam, J; Fouad, H; Umar, Ahmad; Khan, A A; Ansari, S G; Ansari, Z A

    2015-12-01

    Here we report a simple and effective method in tailoring the optoelectronic properties of semi-conducting metal oxide for suitable device application. Sol-gel synthesis was used to synthesize manganese doped TiO2 nanopowder and commercially available TiO2 nanopowder was used as reference material. Thick films of these powder were screen printed on FTO coated glass and annealed at 450 degrees C in ambient air. Separately, 60 μL of neodymium chloride prepared from neodymium oxide, 60 μL of ruthenium based commercial dye (N719) and 60 μL of extracts of calendula orange and dog flower were used as sensitizer to improve the photoconductance properties. Elemental analysis confirmed synthesis of composite material of Mn and TiO2. Morphological observation showed a uniform particles of 25 to 50 nm diameter. Optoelectronic properties were studied by using thick films of these powders as working electrode as a function of wavelength from 430 to 750 nm and the cyclic voltammogram were obtained by scanning potential from -1.5 V to +1.5 V at the illumination intensity of 1000 Wm(-2). Sensitization resulted in additional absorption and functional bands. Oxidation peak current was found decreasing with increasing wavelength. Sensitization with flower extract resulted in increased oxidation current at higher wavelength indicating the improved photoconduction in comparison with N719 and neodymium. PMID:26682377

  1. Holographic optical coupling and beamsplitting elements for optoelectronic interconnects and sensors

    NASA Astrophysics Data System (ADS)

    Schmidt, Juerg; Voelkel, Reinhard; Rosner, S.; Stork, Wilhelm; Sheridan, John T.; Durst, Franz; Schwider, Johannes; Streibl, Norbert

    1993-01-01

    Holographic optical elements (HOEs) are compact and flexible in their function: they can integrate focussing deflection and beamsplitting into a single element. Optical systems consisting of several elements can be built by recording planar HOEs side by side onto a common planar substrate -- a light guiding plate. By folding the light path, i.e., using multiple reflections within this plate, the light is guided from one HOE to the other. This concept is investigated for two applications: (1) An optoelectronic board to board interconnection based on holographic coupling elements on a light guiding plate: Diode lasers and pin diodes were used as optoelectronic transmitters at a data rate of 500 MBits/s. The coupling elements were volume gratings, recorded in dichromated gelatine (DCG) and coated onto the surface of the light guiding plate. Inside the plate the light was guided by total internal reflection. An overall loss of this transmission system of -2.6 dB over a distance of 11 cm was observed. (2) A miniaturized sensor head for the optical measurement of velocities of fluids based on laser Doppler velocimetry (LDV): HOEs mounted onto a glass substrate are used for beamsplitting and deflection. Volume holograms in DCG exhibit good optical efficiency (75% transmission of a cascade of two HOEs). In contrast to conventional sensor heads with diffractive devices one can achieve achromatic behavior which makes the sensor insensitive against wavelength drifts or mode hopping of a semiconductor laser.

  2. Resolving local voltage variations in opto-electronic devices with Kelvin probe force microscopy

    NASA Astrophysics Data System (ADS)

    Tennyson, Elizabeth; Garrett, Joseph; Munday, Jeremy; Leite, Marina

    We employ illuminated Kelvin probe force microscopy (KPFM) to spatially resolve the open-circuit voltage (Voc) of optoelectronic devices with nanoscale spatial resolution, >5 orders of magnitude better than previous methods. In illuminated-KPFM, we measure the difference in work function between the sample surface and the probe, termed the contact potential difference (CPD). By grounding the bottom contact of the solar cell to the AFM probe, the difference between the illuminated and the dark signals is proportional to quasi-Fermi level splitting and, therefore, the Voc. We apply our scanning probe technique to a variety of solar cell materials, including polycrystalline CIGS, where we resolve local variations in Voc >150 mV. We use heterodyne-KPFM (where we map 1 μm2 in 16 seconds) to probe hybrid perovskites solar cells, and quantify in real-time the voltage changes upon material relaxation after illumination. This metrology yields new insights into the local electrical properties of solar cells, and can be expanded to any optoelectronic device.

  3. Selection of physiological parameters for optoelectronic system supporting behavioral therapy of autistic children

    NASA Astrophysics Data System (ADS)

    Landowska, A.; Karpienko, K.; Wróbel, M.; Jedrzejewska-Szczerska, M.

    2014-11-01

    In this article the procedure of selection of physiological parameters for optoelectronic system supporting behavioral therapy of autistic children is proposed. Authors designed and conducted an experiment in which a group of 30 health volunteers (16 females and 14 males) were examined. Under controlled conditions people were exposed to a stressful situation caused by the picture or sound (1kHz constant sound, which was gradually silenced and finished with a shot sound). For each of volunteers, a set of physiological parameters were recorded, including: skin conductance, heart rate, peripheral temperature, respiration rate and electromyography. The selected characteristics were measured in different locations in order to choose the most suitable one for the designed therapy supporting system. The bio-statistical analysis allowed us to discern the proper physiological parameters that are most associated to changes due to emotional state of a patient, such as: skin conductance, temperatures and respiration rate. This allowed us to design optoelectronic sensors network for supporting behavioral therapy of children with autism.

  4. Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector.

    PubMed

    Ko, Pil Ju; Abderrahmane, Abdelkader; Takamura, Tsukasa; Kim, Nam-Hoon; Sandhu, Adarsh

    2016-08-12

    Two-dimensional (2D) layered materials exhibit unique optoelectronic properties at atomic thicknesses. In this paper, we fabricated metal-semiconductor-metal based photodetectors using layered gallium selenide (GaSe) with different thicknesses. The electrical and optoelectronic properties of the photodetectors were studied, and these devices showed good electrical characteristics down to GaSe flake thicknesses of 30 nm. A photograting effect was observed in the absence of a gate voltage, thereby implying a relatively high photoresponsivity. Higher values of the photoresponsivity occurred for thicker layers of GaSe with a maximum value 0.57 AW(-1) and external quantum efficiency of of 132.8%, and decreased with decreasing GaSe flake thickness. The detectivity was 4.05 × 10(10) cm Hz(1/2) W(-1) at 532 nm laser wavelength, underscoring that GaSe is a promising p-type 2D material for photodetection applications in the visible spectrum. PMID:27354428

  5. Overview of studies and developments in cinematography, optoelectronic imaging, and photonics at CEA/DIF

    NASA Astrophysics Data System (ADS)

    Mens, Alain; Alozy, Eric; Aubert, Damien; Benier, Jacky; Bourgade, Jean-Luc; Boutin, Jean-Yves; Brunel, Patrick; Charles, Gilbert; Chollet, Clement; Desbat, Laurent; Gontier, Dominique; Jacquet, Henri-Patrick; Jasmin, Serge; Le Breton, Jean-Pierre; Marchet, Bruno; Masclet-Gobin, Isabelle; Mercier, Patrick; Millier, Philippe; Missault, Carole; Negre, Jean-Paul; Paul, Serge; Rosol, Rodolphe; Sommerlinck, Thierry; Veaux, Jacqueline; Veron, Laurent; Vincent de Araujo, Manuel; Jaanimagi, Paul; Pien, Greg

    2003-07-01

    This paper gives an overview of works undertaken at CEA/DIF in high speed cinematography, optoelectronic imaging and ultrafast photonics for the needs of the CEA/DAM experimental programs. We have developed a new multichannel velocimeter, and a new probe for shock breakout timing measurements in detonics experiments. A brief description and a recall of their main performances will be made. We have implemented three new optoelectronic imaging systems, in order to observe dynamic scenes in the ranges of 50 - 100 keV and 4 MeV. These systems are described, their main specifications and performances are given. Then we describe our contribution to the ICF program: after recalling the specifications of LIL plasma diagnostics, we describe the features and performances of visible streak tubes, X-ray streak tubes, visible and X-ray framing cameras and the associated systems developed to match these specifications. At last we introduce the subject of components and systems vulnerability in the LMJ target area, the principles identified to mitigate this problem and the first results of studies (image relay, response of streak tube phosphors, MCP image intensifiers and CCDs to fusion neutrons) related to this subject. Results obtained so far are presented.

  6. Optoelectronic and excitonic properties of oligoacenes and one-dimensional nanostructures.

    SciTech Connect

    Hsieh, Timothy H.; Wong, Brian M.

    2010-09-01

    The optoelectronic and excitonic properties in a series of linear acenes are investigated using range-separated methods within time-dependent density functional theory (TDDFT). In these highly-conjugated systems, we find that the range-separated formalism provides a substantially improved description of excitation energies compared to conventional hybrid functionals, which surprisingly fail for the various low-lying valence transitions. Moreover, we find that even if the percentage of Hartree-Fock exchange in conventional hybrids is re-optimized to match wavefunction-based CC2 benchmark calculations, they still yield serious errors in excitation energy trends. Based on an analysis of electron-hole transition density matrices, we also show that conventional hybrid functionals overdelocalize excitons and underestimate quasiparticle energy gaps in the acene systems. The results of the present study emphasize the importance of a range-separated and asymptotically-correct contribution of exchange in TDDFT for investigating optoelectronic and excitonic properties, even for these simple valence excitations.

  7. Light Manipulation for Organic Optoelectronics Using Bio-inspired Moth's Eye Nanostructures

    NASA Astrophysics Data System (ADS)

    Zhou, Lei; Ou, Qing-Dong; Chen, Jing-De; Shen, Su; Tang, Jian-Xin; Li, Yan-Qing; Lee, Shuit-Tong

    2014-02-01

    Organic-based optoelectronic devices, including light-emitting diodes (OLEDs) and solar cells (OSCs) hold great promise as low-cost and large-area electro-optical devices and renewable energy sources. However, further improvement in efficiency remains a daunting challenge due to limited light extraction or absorption in conventional device architectures. Here we report a universal method of optical manipulation of light by integrating a dual-side bio-inspired moth's eye nanostructure with broadband anti-reflective and quasi-omnidirectional properties. Light out-coupling efficiency of OLEDs with stacked triple emission units is over 2 times that of a conventional device, resulting in drastic increase in external quantum efficiency and current efficiency to 119.7% and 366 cd A-1 without introducing spectral distortion and directionality. Similarly, the light in-coupling efficiency of OSCs is increased 20%, yielding an enhanced power conversion efficiency of 9.33%. We anticipate this method would offer a convenient and scalable way for inexpensive and high-efficiency organic optoelectronic designs.

  8. Tunable optoelectronic properties of CBD-CdS thin films via bath temperature alterations

    NASA Astrophysics Data System (ADS)

    Kumarage, W. G. C.; Wijesundera, R. P.; Seneviratne, V. A.; Jayalath, C. P.; Dassanayake, B. S.

    2016-03-01

    The tunability of the band-gap value and electron affinity of the n-CdS by adjusting the growth parameters is very important as it paves the way to improve the efficiency of CdS-based solar cells by adjusting the band lineup with other p-type semiconductors. In this respect, polycrystalline n-CdS thin films were grown on FTO glass substrates at different bath temperatures (40-80 °C) by the chemical bath deposition technique. The structural, morphological and optoelectronic properties of CdS thin films were studied using x-ray diffraction, scanning electron microscopy, UV-Vis spectrometry, profilometry, atomic force microscopy, photoelectrochemical and Mott-Schottky measurements. Absorption measurements reveal that an energy-gap value of n-CdS can be adjusted from 2.27 to 2.57 eV and Mott-Schottky measurements indicate that the flat-band potential is increased from  -699 to  -835 V with respect to a Ag/AgCl electrode by decreasing the deposition bath temperature from 60 to 40 °C. This tunability of optoelectronic properties of n-CdS is very useful for applications in thin film solar cells and other devices.

  9. Photochemical deterioration of the organic/metal contacts in organic optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Wang, Qi; Williams, Graeme; Tsui, Ting; Aziz, Hany

    2012-09-01

    We study the effect of exposure to light on a wide range of organic/metal contacts that are commonly used in organic optoelectronic devices and found that irradiation by light in the visible and UV range results in a gradual deterioration in their electrical properties. This photo-induced contact degradation reduces both charge injection (i.e., from the metal to the organic layer) and charge extraction (i.e., from the organic layer to the metal). X-ray photoelectron spectroscopy (XPS) measurements reveal detectable changes in the interface characteristics after irradiation, indicating that the photo-degradation is chemical in nature. Changes in XPS characteristics after irradiation suggests a possible reduction in bonds associated with organic-metal complexes. Measurements of interfacial adhesion strength using the four-point flexure technique reveal a decrease in organic/metal adhesion in irradiated samples, consistent with a decrease in metal-organic bond density. The results shed the light on a new material degradation mechanism that appears to have a wide presence in organic/metal interfaces in general, and which likely plays a key role in limiting the stability of various organic optoelectronic devices such as organic light emitting devices, organic solar cells, and organic photo-detectors.

  10. Simulation and Numerical Modeling of the Self-assembly of an Optoelectronic Peptide

    NASA Astrophysics Data System (ADS)

    Mansbach, Rachael; Ferguson, Andrew

    We report molecular dynamics simulations of the self-assembly of synthetic π-conjugated oligopeptides into optoelectronic nanostructures. The electronic properties provide the basis for an array of organic electronic devices, such as light-emitting diodes, field-effect transistors, and solar cells. Control of the structure, stability, and kinetics of self-assembled organic electronics by tuning monomer chemistry and environmental conditions presents a powerful route to the fabrication of biocompatible ``designer materials.'' We have performed coarse-grained simulations of the self-assembly of several hundred peptides over microsecond time scales to probe the morphology and kinetics of aggregation with molecular-level detail. We have subsequently used this simulation data to parameterize a kinetic aggregation model based on Smoluchowski coagulation theory to enable prediction of aggregation dynamics on millisecond time scales. These numerical models are now being integrated into a multi-physics model of peptide aggregation in a microfluidic flow cell developed by our experimental collaborators to model the self-assembly of diverse peptide architectures under tailored flow-fields for the fabrication of biocompatible assemblies with defined morphology and optoelectronic function.

  11. Synthesis, structure, and opto-electronic properties of organic-based nanoscale heterojunctions

    NASA Astrophysics Data System (ADS)

    Rezek, Bohuslav; Čermák, Jan; Kromka, Alexander; Ledinský, Martin; Hubík, Pavel; Mareš, Jiří J.; Purkrt, Adam; Cimrová, Vĕra; Fejfar, Antonín; Kočka, Jan

    2011-12-01

    Enormous research effort has been put into optimizing organic-based opto-electronic systems for efficient generation of free charge carriers. This optimization is mainly due to typically high dissociation energy (0.1-1 eV) and short diffusion length (10 nm) of excitons in organic materials. Inherently, interplay of microscopic structural, chemical, and opto-electronic properties plays crucial role. We show that employing and combining advanced scanning probe techniques can provide us significant insight into the correlation of these properties. By adjusting parameters of contact- and tapping-mode atomic force microscopy (AFM), we perform morphologic and mechanical characterizations (nanoshaving) of organic layers, measure their electrical conductivity by current-sensing AFM, and deduce work functions and surface photovoltage (SPV) effects by Kelvin force microscopy using high spatial resolution. These data are further correlated with local material composition detected using micro-Raman spectroscopy and with other electronic transport data. We demonstrate benefits of this multi-dimensional characterizations on (i) bulk heterojunction of fully organic composite films, indicating differences in blend quality and component segregation leading to local shunts of photovoltaic cell, and (ii) thin-film heterojunction of polypyrrole (PPy) electropolymerized on hydrogen-terminated diamond, indicating covalent bonding and transfer of charge carriers from PPy to diamond.

  12. New melt-processable thermoplastic polyimides for opto-electronic applications

    NASA Astrophysics Data System (ADS)

    Narayanan, Aditya; Haralur, Gurulingamurthy

    2012-10-01

    The rapid development and adoption of digital technology is leading to an increase in demand for smaller, faster digital data devices and faster digital telecommunication networks. This trend requires increased network bandwidth to handle large amounts of data and seamless integration of network devices with compatible end-user devices. This need is being met by using fiber-optic and photonics technology, infra-red (IR) signals to transmit information, and is fundamental changing the communication industry, thereby creating a need for new polymeric materials. New ULTEM* polyetherimide (PEI) and EXTEM* thermoplastic polyimide (TPI) resins meet the material requirements for the optoelectronics industry. These resins have building blocks enabling IR light transmission without degrading signal quality. They can be injection-molded into thin, precision optical lenses and connectors. ULTEM* resins are been widely used in this industry as fiber-optic components in trans-receivers. EXTEM* resins are amenable to lead-free soldering (LFS), a greener industrial assembly process. While still being IR-transparent, EXTEM* resin is an ideal material for LFS capable substrates, connectors and lenses. An optical product portfolio has been developed and is being presented as a solution to the opto-electronics component industry and some of the successful applications therein.

  13. An opto-electronic joint detection system based on DSP aiming at early cervical cancer screening

    NASA Astrophysics Data System (ADS)

    Wang, Weiya; Jia, Mengyu; Gao, Feng; Yang, Lihong; Qu, Pengpeng; Zou, Changping; Liu, Pengxi; Zhao, Huijuan

    2015-02-01

    The cervical cancer screening at a pre-cancer stage is beneficial to reduce the mortality of women. An opto-electronic joint detection system based on DSP aiming at early cervical cancer screening is introduced in this paper. In this system, three electrodes alternately discharge to the cervical tissue and three light emitting diodes in different wavelengths alternately irradiate the cervical tissue. Then the relative optical reflectance and electrical voltage attenuation curve are obtained by optical and electrical detection, respectively. The system is based on DSP to attain the portable and cheap instrument. By adopting the relative reflectance and the voltage attenuation constant, the classification algorithm based on Support Vector Machine (SVM) discriminates abnormal cervical tissue from normal. We use particle swarm optimization to optimize the two key parameters of SVM, i.e. nuclear factor and cost factor. The clinical data were collected on 313 patients to build a clinical database of tissue responses under optical and electrical stimulations with the histopathologic examination as the gold standard. The classification result shows that the opto-electronic joint detection has higher total coincidence rate than separate optical detection or separate electrical detection. The sensitivity, specificity, and total coincidence rate increase with the increasing of sample numbers in the training set. The average total coincidence rate of the system can reach 85.1% compared with the histopathologic examination.

  14. RIR-MAPLE deposition of conjugated polymers and hybrid nanocomposites for application to optoelectronic devices

    SciTech Connect

    Stiff-Roberts, Adrienne D.; Pate, Ryan; McCormick, Ryan; Lantz, Kevin R.

    2012-07-30

    Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) is a variation of pulsed laser deposition that is useful for organic-based thin films because it reduces material degradation by selective absorption of infrared radiation in the host matrix. A unique emulsion-based RIR-MAPLE approach has been developed that reduces substrate exposure to solvents and provides controlled and repeatable organic thin film deposition. In order to establish emulsion-based RIR-MAPLE as a preferred deposition technique for conjugated polymer or hybrid nanocomposite optoelectronic devices, studies have been conducted to demonstrate the value added by the approach in comparison to traditional solution-based deposition techniques, and this work will be reviewed. The control of hybrid nanocomposite thin film deposition, and the photoconductivity in such materials deposited using emulsion-based RIR-MAPLE, will also be reviewed. The overall result of these studies is the demonstration of emulsion-based RIR-MAPLE as a viable option for the fabrication of conjugated polymer and hybrid nanocomposite optoelectronic devices that could yield improved device performance.

  15. First principles study of scandium nitride and yttrium nitride alloy system: Prospective material for optoelectronics

    NASA Astrophysics Data System (ADS)

    Haq, Bakhtiar Ul; Afaq, A.; Abdellatif, Galila; Ahmed, R.; Naseem, S.; Khenata, R.

    2015-09-01

    Besides many other state of the art promising applications, transition metal (TM) nitride materials are intensively investigated on account of considered potential materials for optoelectronic applications. In this study computations pertaining to structural, electronic as well as the optical properties of Scandium Nitride (ScN), Yttrium Nitride (YN) and their mutual alloying (ScxY1-xN), for x = 0.25, 0.50, 0.75, are presented. These computations are carried out by employing the full potential (FP) linearized augmented plane wave (LAPW) plus local orbitals (lo) method designed within density functional theory (DFT). Structural parameters are calculated at the level of Perdew Burke and Ernzerhof (PBE) parameterized generalized gradient approximations (GGA), where to investigate electronic and optical properties, Tran-Blaha modified Becke-Johnson (mBJ) potential is involved. From our calculations, a very small variation is noted in lattice constant values of ScxY1-xN alloying system as a function of Y content, reflecting to appropriate alloying of ScN and YN. Moreover, effect of the site preference for two different configurations is also analyzed. The lower absorption of ScxY1-xN system in the visible light region together with less than 30% reflectivity for entire alloying range lead to their transparent nature. Additionally fascinating characteristics, like high mechanical strength, tunable energy band gap, transparent nature, and lower reflectivity of the ScYN alloying system provoke their further potential in optoelectronics.

  16. Nonlinear dynamics in semiconductor ring lasers with negative optoelectronic and incoherent optical feedback

    NASA Astrophysics Data System (ADS)

    Kingni, S. T.; Van der Sande, G.; Ermakov, Ilya V.; Danckaert, J.

    2014-05-01

    In this work, we study theoretically the dynamical behavior of two semiconductor ring lasers (SRLs). One is subject to negative optoelectronic feedback and the other laser is subject to incoherent optical feedback. Relying on asymptotic methods, we are able to reduce the original set of five equations used to describe the dynamical behavior of SRLs with negative optoelectronic feedback (SRL-NOEF) or incoherent optical feedback (SRL-IOF) to two equations and one map with time delay valid on time-scales longer than the relaxation oscillations (ROs). The equations of the reduced models turn out to be the same for both systems. As we vary the feedback strength, the devices under consideration in this work display both continuous wave operation and a period-doubling route to chaos. The two counter-propagating intensities of both systems exhibit in-phase chaotic behavior for small delay times comparable to the period of relaxation oscillations. For delay times significantly longer than the period of ROs, the two counter-propagating modes show in anti-phase chaotic oscillations. Moreover, for long delay times, we find that the counter-propagating intensities of both systems depict the same dynamical behaviors when their feedback strengths are increased.

  17. Agreement between fiber optic and optoelectronic systems for quantifying sagittal plane spinal curvature in sitting.

    PubMed

    Cloud, Beth A; Zhao, Kristin D; Breighner, Ryan; Giambini, Hugo; An, Kai-Nan

    2014-07-01

    Spinal posture affects how individuals function from a manual wheelchair. There is a need to directly quantify spinal posture in this population to ultimately improve function. A fiber optic system, comprised of an attached series of sensors, is promising for measuring large regions of the spine in individuals sitting in a wheelchair. The purpose of this study was to determine the agreement between fiber optic and optoelectronic systems for measuring spinal curvature, and describe the range of sagittal plane spinal curvatures in natural sitting. Able-bodied adults (n = 26, 13 male) participated. Each participant assumed three sitting postures: natural, slouched (accentuated kyphosis), and extension (accentuated lordosis) sitting. Fiber optic (ShapeTape) and optoelectronic (Optotrak) systems were applied to the skin over spinous processes from S1 to C7 and used to measure sagittal plane spinal curvature. Regions of kyphosis and lordosis were identified. A Cobb angle-like method was used to quantify lordosis and kyphosis. Generalized linear model and Bland-Altman analyses were used to assess agreement. A strong correlation exists between curvature values obtained with Optotrak and ShapeTape (R(2) = 0.98). The mean difference between Optotrak and ShapeTape for kyphosis in natural, extension, and slouched postures was 4.30° (95% LOA: -3.43 to 12.04°), 3.64° (95% LOA: -1.07 to 8.36°), and 4.02° (95% LOA: -2.80 to 10.84°), respectively. The mean difference for lordosis, when present, in natural and extension postures was 2.86° (95% LOA: -1.18 to 6.90°) and 2.55° (95% LOA: -3.38 to 8.48°), respectively. In natural sitting, the mean ± SD of kyphosis values was 35.07 ± 6.75°. Lordosis was detected in 8/26 participants: 11.72 ± 7.32°. The fiber optic and optoelectronic systems demonstrate acceptable agreement for measuring sagittal plane thoracolumbar spinal curvature.

  18. Nanostructure and optoelectronic phenomena in germanium-transparent conductive oxide (Ge:TCO) composites

    NASA Astrophysics Data System (ADS)

    Shih, Grace Hwei-Pyng

    Nanostructured composites are attracting intense interest for electronic and optoelectronic device applications, specifically as active elements in thin film photovoltaic (PV) device architectures. These systems implement fundamentally different concepts of enhancing energy conversion efficiencies compared to those seen in current commercial devices. This is possible through considerable flexibility in the manipulation of device-relevant properties through control of the interplay between the nanostructure and the optoelectronic response. In the present work, inorganic nanocomposites of semiconductor Ge embedded in transparent conductive indium tin oxide (ITO) as well as Ge in zinc oxide (ZnO) were produced by a single step RF-magnetron sputter deposition process. It is shown that, by controlling the design of the nanocomposites as well as heat treatment conditions, decreases in the physical dimensions of Ge nanophase size provided an effective tuning of the optical absorption and charge transport properties. This effect of changes in the optical properties of nanophase semiconductors with respect to size is known as the quantum confinement effect. Variation in the embedding matrix material between ITO and ZnO with corresponding characterization of optoelectronic properties exhibit notable differences in the presence and evolution of an interfacial oxide within these composites. Further studies of interfacial structures were performed using depth-profiling XPS and Raman spectroscopy, while study of the corresponding electronic effects were performed using room temperature and temperature-dependent Hall Effect. Optical absorption was noted to shift to higher onset energies upon heat treatment with a decrease in the observed Ge domain size, indicating quantum confinement effects within these systems. This contrasts to previous investigations that have involved the introduction of nanoscale Ge into insulating, amorphous oxides. Comparison of these different matrix

  19. Processing of guided wave optoelectronic materials; Proceedings of the Meeting, Los Angeles, CA, January 24, 25, 1984

    NASA Astrophysics Data System (ADS)

    Holman, R. L.; Smyth, D. M.

    1984-01-01

    Electro-optic materials issues and guided wave optoelectronics are discussed, taking into account an early history of lithium niobate, a comparison of LiNbO3 and III-V semiconductor technologies for integrated optics, materials requirements for GaAs for optoelectronic applications, the chemistry of LiNbO3 as an optoelectronic material, and laser assisted growth of optical quality single crystal fibers. Topics related to waveguide fabrication are explored, giving attention to effects of water vapor on TiO2, LiNb3O8 and (Ti/x/Nb/1-x/)O2 compound kinetics during Ti:LiNbO3 waveguide fabrication, short- and long-term stability in proton exchanged lithium niobate waveguides, materials analysis and optical characteristics in the case of proton-exchanged LiNbO3 waveguides, planar and channel waveguides fabricated by nitrogen ion implantation in fused silica, and configurations for high speed GaAs CCD imagers. The photorefractive effect in waveguides, and the limitations of niobate and III-V materials for guided wave optoelectronic applications are also considered.

  20. REPLY: Reply to 'Comments on "Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films"'

    NASA Astrophysics Data System (ADS)

    Shinde, S. S.; Shinde, P. S.; Bhosale, C. H.; Rajpure, K. Y.

    2008-11-01

    This communication is a response to the comments made by Tiburcio-Silver and Castañeda on our recently published paper entitled 'Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films'. Each one of the points questioned is clarified in order to give the respective reasons, and additional information is given that supports the content of our paper.

  1. Graphene Quantum Dots: Molecularly Designed, Nitrogen-Functionalized Graphene Quantum Dots for Optoelectronic Devices (Adv. Mater. 23/2016).

    PubMed

    Tetsuka, Hiroyuki; Nagoya, Akihiro; Fukusumi, Takanori; Matsui, Takayuki

    2016-06-01

    H. Tetsuka and co-workers develop a versatile technique to tune the energy levels and energy gaps of nitrogen-functionalized graphene quantum dots (NGQDs) continuously through molecular structure design, as described on page 4632. The incorporation of layers of NGQDs into the structures markedly improves the performance of optoelectronic devices. PMID:27281048

  2. Optimization of an optoelectronic system to detect volatile organic compound vapours

    NASA Astrophysics Data System (ADS)

    Martínez-Hipatl, C.; Muñoz-Aguirre, S.; Castillo-Mixcoatl, J.; Beltrán-Pérez, G.

    2009-09-01

    In a previous work the monitoring of the fringes pattern shift produced by the interaction of a polymeric film with volatile organic compounds (VOC), by a Pohl interferometric arrangement has been reported. Such fringes shift was measured by a conventional photodetector. In the present work the optimization of an optoelectronic system for detection and quantification of VOC is presented. In this new arrangement a charge coupled device (camera CCD) was used to monitor such fringes shift. The CCD takes advantage of the fact that each pixel can be used as a single photodetector. A program was realized in matlab for the acquisition and processing of the data, which allows to evaluate faster the obtained results. Up to the moment results of the system performance by the measurement of the steady state response of dimethylpolysiloxane (DMPS) to ethanol vapour are reported.

  3. Optoelectronic Properties of Carbon Nanorings: Excitonic Effects from Time-Dependent Density Functional Theory

    PubMed Central

    2009-01-01

    The electronic structure and size-scaling of optoelectronic properties in cycloparaphenylene carbon nanorings are investigated using time-dependent density functional theory (TDDFT). The TDDFT calculations on these molecular nanostructures indicate that the lowest excitation energy surprisingly becomes larger as the carbon nanoring size is increased, in contradiction with typical quantum confinement effects. In order to understand their unusual electronic properties, I performed an extensive investigation of excitonic effects by analyzing electron-hole transition density matrices and exciton binding energies as a function of size in these nanoring systems. The transition density matrices allow a global view of electronic coherence during an electronic excitation, and the exciton binding energies give a quantitative measure of electron-hole interaction energies in the nanorings. Based on overall trends in exciton binding energies and their spatial delocalization, I find that excitonic effects play a vital role in understanding the unique photoinduced dynamics in these carbon nanoring systems. PMID:22481999

  4. Optoelectronic wide-word personality ROMs for high-speed control applications

    NASA Astrophysics Data System (ADS)

    Arrathoon, Raymond; Arshad, Mohammad J.; Li, Tao; Lin, Tsong-Neng W.; Zhang, Bing

    1992-07-01

    A fiber optic based wide-word personality ROM capable of data rates in excess of 125 Mbs has been constructed and tested. Because of the special fan-out characteristics of optical devices, the optoelectronic ROM is capable of operating in a wide-word regime that is inaccessible to all-electronic ROMs. The principle of operation permits n electrical control bits to select among 2n groups of p optical output bits. In theory, each output word of width p can consist of thousands of bits. The device constitutes a high-speed electro-optic control system permitting a small number of electrical bits to control a geometrically larger number of optical output bits.

  5. Electrical properties of a new sulfur-containing polymer for optoelectronic application

    NASA Astrophysics Data System (ADS)

    ElAkemi, ElMehdi; Jaballah, Nejmeddine; Ouada, Hafedh Ben; Majdoub, Mustapha

    2015-06-01

    An original polythiophene derivative was characterized to develop the optoelectronic properties of sulfur-containing π-conjugated polymer. The optical properties of the polymer were investigated by UV-visible absorption spectroscopy and atomic force microscopy. Investigations of the electrical characteristics of polymer diodes are reported. We present current-voltage characteristics and impedance spectroscopy measurements performed on partially sulfur-containing thin films in sandwich structure ITO/sulfur-containing polymer/Al. The conduction mechanisms in these layers are identified to be a space-charge-limited current. The AC electrical transport of the sulfur-containing polymer is studied as a function of frequency (100 Hz-10 MHz) and temperature in impedance spectroscopy analyses. We interpreted Cole-Cole plots in terms of the equivalent circuit model as a single parallel resistance and a capacitance network in series with a relatively small resistance. The evolution of the electrical parameters deduced from fitting of the experimental data is discussed.

  6. Final report on LDRD project 52722 : radiation hardened optoelectronic components for space-based applications.

    SciTech Connect

    Hargett, Terry W.; Serkland, Darwin Keith; Blansett, Ethan L.; Geib, Kent Martin; Sullivan, Charles Thomas; Hawkins, Samuel D.; Wrobel, Theodore Frank; Keeler, Gordon Arthur; Klem, John Frederick; Medrano, Melissa R.; Peake, Gregory Merwin; Karpen, Gary D.; Montano, Victoria A.

    2003-12-01

    This report describes the research accomplishments achieved under the LDRD Project 'Radiation Hardened Optoelectronic Components for Space-Based Applications.' The aim of this LDRD has been to investigate the radiation hardness of vertical-cavity surface-emitting lasers (VCSELs) and photodiodes by looking at both the effects of total dose and of single-event upsets on the electrical and optical characteristics of VCSELs and photodiodes. These investigations were intended to provide guidance for the eventual integration of radiation hardened VCSELs and photodiodes with rad-hard driver and receiver electronics from an external vendor for space applications. During this one-year project, we have fabricated GaAs-based VCSELs and photodiodes, investigated ionization-induced transient effects due to high-energy protons, and measured the degradation of performance from both high-energy protons and neutrons.

  7. Floating electrode optoelectronic tweezers: Light-driven dielectrophoretic droplet manipulation in electrically insulating oil medium

    NASA Astrophysics Data System (ADS)

    Park, Sungyong; Pan, Chenlu; Wu, Ting-Hsiang; Kloss, Christoph; Kalim, Sheraz; Callahan, Caitlin E.; Teitell, Michael; Chiou, Eric P. Y.

    2008-04-01

    We report an optical actuation mechanism, floating electrode optoelectronic tweezers (FEOET). FEOET enables light-driven transport of aqueous droplets immersed in electrically insulating oil on a featureless photoconductive glass layer with direct optical images. We demonstrate that a 681μm de-ionized water droplet immersed in corn oil medium is actuated by a 3.21μW laser beam with an average intensity as low as 4.08μW/mm2 at a maximum speed of 85.1μm/s on a FEOET device. FEOET provides a promising platform for massively parallel droplet manipulation with optical images on low cost, silicon-coated glass. The FEOET device structure, fabrication, working principle, numerical simulations, and operational results are presented in this letter.

  8. Force versus position profiles of HeLa cells trapped in phototransistor-based optoelectronic tweezers

    NASA Astrophysics Data System (ADS)

    Neale, Steven L.; Ohta, Aaron T.; Hsu, Hsan-Yin; Valley, Justin K.; Jamshidi, Arash; Wu, Ming C.

    2009-02-01

    Phototransistor-based Optoelectronic Tweezers (Ph-OET) enables optical manipulation of microscopic particles in physiological buffer solutions by creating electrical field gradients around them. A spatial light pattern is created by a DMD based projector focused through a microscope objective onto the phototransistor. In this paper we look into what differences there are in the trap stiffness profiles of HeLa cells trapped by Ph-OET compared to previous a-Si based OET devices. We find that the minimum trap size for a HeLa cell using a phototransistor with pixel pitch 10.35μm is 24.06μm in diameter which can move cells at 20μms-1 giving a trap stiffness of 8.38 x 10-7 Nm-1.

  9. Recognition of Cuneiform Inscription Signs by use of a Hybrid-Optoelectronic Correlator Device

    NASA Astrophysics Data System (ADS)

    Demoli, Nazif; Kamps, Jörn; Krüger, Sven; Gruber, Hartmut; Wernicke, Günther

    2002-08-01

    A hybrid-optoelectronic correlator device and an algorithm are proposed for recognizing cuneiform inscription signs. The device is based on the extended correlator architecture with three liquid-crystal display(s) (LCD)s and three light detectors: one CCD camera for capturing the input image, one LCD for displaying the input image, two LCDs for the complex correlation filter (amplitude and phase parts), and two detectors for measuring the total and peak intensities of the output correlation information. The recognition algorithm is designed to allow automatic as well as real-time processing. The recognition results are given for the cuneiform signs impressed on an original clay tablet. The investigated tablet (VAT 12890 of the Pergamon Museum, Berlin, Germany) was found in Bogazk öy (Hattusha) and dates from the 14th century B.C. It is a fragment of the Epic of Gilgamesh in the Akkadian language with a large number of the sign samples.

  10. Massively parallel low-cost pick-and-place of optoelectronic devices by electrochemical fluidic processing.

    PubMed

    Ozkan, M; Kibar, O; Ozkan, C S; Esener, S C

    2000-09-01

    We describe a novel electrochemical technique for the nonlithographic, fluidic pick-and-place assembly of optoelectronic devices by electrical and optical addressing. An electrochemical cell was developed that consists of indium tin oxide (ITO) and n -type silicon substrates as the two electrode materials and deionized water (R = 18 MOmega) as the electrolytic medium between the two electrodes. 0.8-20-microm-diameter negatively charged polystyrene beads, 50-100-microm-diameter SiO(2) pucks, and 50-microm LED's were successfully integrated upon a patterned silicon substrate by electrical addressing. In addition, 0.8-microm-diameter beads were integrated upon a homogeneous silicon substrate by optical addressing. This method can be applied to massively parallel assembly (>1000 x 1000 arrays) of multiple types of devices (of a wide size range) with very fast (a few seconds) and accurate positioning.

  11. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

    DOE PAGES

    Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; Hozumi, Hideaki; Gao, Yongqian; Eda, Goki; Mattevi, Cecilia; Fujita, Takeshi; Yoshigoe, Akitaka; Ishizuka, Shinji; et al

    2016-04-08

    We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a setmore » of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.« less

  12. New possibility on InZnO nano thin film for green emissive optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Sugumaran, Sathish; Noor Bin Ahmad, Mohd; Faizal Jamlos, Mohd; Bellan, Chandar Shekar; Chandran, Sharmila; Sivaraj, Manoj

    2016-04-01

    Indium zinc oxide (InZnO) nano thin film was prepared from InZnO nanoparticles (NPs) by thermal evaporation technique. Fourier transform infrared spectroscopy showed the presence of metal-oxide bond. X-ray diffraction pattern revealed the mixed phase structure. The presence of elements In, Zn and O were identified from energy dispersive X-ray analysis. Size of the NPs was found to be 171 and 263 nm by transmission electron microscopy. Scanning electron microscopy image showed the spherical shape uniform morphology with uniform distribution grains. Photoluminescence spectrum exhibited a broad green emission for InZnO nano thin film. The acquired results of structure, smooth morphology and photoluminescence property suggested that the InZnO nano thin film to be a promising material for room temperature green emissive optoelectronic, laser diodes, solar cells and other optical devices.

  13. Smart-pixel spatial light modulator for incorporation in an optoelectronic neural network.

    PubMed

    Bar-Tana, I; Sharpe, J P; McKnight, D J; Johnson, K M

    1995-02-01

    We present the design, fabrication, and testing of a novel liquid-crystal-on-silicon optically addressed spatial light modulator for use as a weight matrix in an ART-1 optoelectronic neural processor. Each pixel in the 50 x 83 element array occupies 75 microm x 75 microm and consists of a photodetector, a threshold circuit, a 1-bit (flip-flop) memory element, and a liquid-crystal modulating mirror. The array is designed to switch all the pixels initially to the ON state. Subsequently each pixel is independently switched to the OFF state if a superthreshold amount of light falls upon the pixel's photodetector. The device has a contrast ratio of 20:1, a switch-on time (10-90% rise time) of 500 micros, and a switch-off time of ~500 micros (depending on the externally set threshold). Measured device uniformities and interpixel coupling are also described. PMID:19859168

  14. Next-generation thermo-plasmonic technologies and plasmonic nanoparticles in optoelectronics

    NASA Astrophysics Data System (ADS)

    De Sio, Luciano; Placido, Tiziana; Comparelli, Roberto; Lucia Curri, M.; Striccoli, Marinella; Tabiryan, Nelson; Bunning, Timothy J.

    2015-05-01

    Controlling light interactions with matter on the nanometer scale provides for compelling opportunities for modern technology and stretches our understanding and exploitation of applied physics, electronics, and fabrication science. The smallest size to which light can be confined using standard optical elements such as lenses and mirrors is limited by diffraction. Plasmonic nanostructures have the extraordinary capability to control light beyond the diffraction limit through an unique phenomenon called the localized plasmon resonance. This remarkable capability enables unique prospects for the design, fabrication and characterization of highly integrated photonic signal-processing systems, nanoresolution optical imaging techniques and nanoscale electronic circuits. This paper summarizes the basic principles and the main achievements in the practical utilization of plasmonic effects in nanoparticles. Specifically, the paper aims at highlighting the major contributions of nanoparticles to nanoscale temperature monitoring, modern "drug free" medicine and the application of nanomaterials to a new generation of opto-electronics integrated circuits.

  15. Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices

    NASA Astrophysics Data System (ADS)

    Wassweiler, Ella; Toor, Fatima

    2016-06-01

    The use of gallium antimonide (GaSb) is increasing, especially for optoelectronic devices in the infrared wavelengths. It has been demonstrated in gallium nitride (GaN) devices operating at ultraviolet (UV) wavelengths, that surface textures increase the overall device efficiency. In this work, we fabricated eight different surface textures in GaSb to be used in enhancing efficiency in infrared wavelength devices. Through chemical etching with hydrofluoric acid, hydrogen peroxide, and tartaric acid we characterize the types of surface textures formed and the removal rate of entire layers of GaSb. Through optimization of the etching recipes we lower the reflectivity from 35.7% to 1% at 4 μm wavelength for bare and textured GaSb, respectively. In addition, we simulate surface textures using ray optics in finite element method solver software to provide explanation of our experimental findings.

  16. Wideband-frequency tunable optoelectronic oscillator based on injection locking to an electronic oscillator.

    PubMed

    Fleyer, Michael; Sherman, Alexander; Horowitz, Moshe; Namer, Moshe

    2016-05-01

    We experimentally demonstrate a wideband-frequency tunable optoelectronic oscillator (OEO) based on injection locking of the OEO to a tunable electronic oscillator. The OEO cavity does not contain a narrowband filter and its frequency can be tuned over a broad bandwidth of 1 GHz. The injection locking is based on minimizing the injected power by adjusting the frequency of one of the OEO cavity modes to be approximately equal to the frequency of the injected signal. The phase noise that is obtained in the injection-locked OEO is similar to that obtained in a long-cavity self-sustained OEO. Although the cavity length of the OEO was long, the spurious modes were suppressed due to the injection locking without the need to use a narrowband filter. The spurious level was significantly below that obtained in a self-sustained OEO after inserting a narrowband electronic filter with a Q-factor of 720 into the cavity.

  17. Optoelectronic hybrid fiber laser sensor for simultaneous acoustic and magnetic measurement.

    PubMed

    Wang, Zhaogang; Zhang, Wentao; Huang, Wenzhu; Feng, Shengwen; Li, Fang

    2015-09-21

    An optoelectronic hybrid fiber optic acoustic and magnetic sensor (FOAMS) based on fiber laser sensing is proposed, which can measure acoustic and magnetic field simultaneously. A static magnetic field signal can be carried by an AC Lorentz force, and demodulated in frequency domain together with acoustic signals. Some experiments of acoustic pressure sensitivity, magnetic field sensitivity, and simultaneous acoustic and magnetic measurement on a fabricated FOAMS were carried out. The acoustic pressure sensitivity was about -164.7 dB (0 dB re 1 pm/μPa) and the magnetic field sensitivity was 0.6 dB (0 dB re 1 pm/ (T•A)). The experiment of simultaneous acoustic and magnetic measurement shows that the detections of acoustic and magnetic field have little effect on each other in dynamic range and simultaneously measuring acoustic and magnetic field is feasible. PMID:26406643

  18. Ba{sub 2}TeO as an optoelectronic material: First-principles study

    SciTech Connect

    Sun, Jifeng; Shi, Hongliang; Du, Mao-Hua; Singh, David J.; Siegrist, Theo

    2015-05-21

    The band structure, optical, and defects properties of Ba{sub 2}TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or transparent conducting material. Ba{sub 2}TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical bandgap [Besara et al., J. Solid State Chem. 222, 60 (2015)]. We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba{sub 2}TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of the donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.

  19. Note: Limitations of the optoelectronic control for carbon nanoparticles synthesis via arc-discharge in solution.

    PubMed

    Darias-González, J G; Hernández-Tabares, L; Carrillo-Barroso, E; Ledo-Pereda, L M; Arteche-Díaz, J; Desdín-García, L F

    2014-03-01

    Submerged electric arc discharge in liquids has shown to be a promising method for synthesizing a wide variety of nanomaterials. However, it requires an accurate current stability control to ensure the desired purity and structure of the products. The discharge stability control through light emission has been previously studied, but still requires further investigation to clarify the influence of some parameters. The present work has studied the solution's transmittance variation over time, the correlation between the arc light emission and the arc current, and the feasibility of controlling the arc current by using a specific wavelength of the arc light spectrum. Several limitations of the optoelectronic control were found at low currents (I < 50 A).

  20. Optical and electrical properties of p-substituted-benzylidenemalononitrile thin films: Optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Aloui, Walid; Dhahri, Najeh; Bouazizi, Aabdelaziz; Boubaker, Tawfik; Goumont, Regis

    2016-03-01

    A donor-bridge-acceptor type conjugated molecule has been successfully synthesized and characterized. The optical properties such as absorption, photoluminescence and electrical properties such as cyclic-voltammetry and J-V characteristic of p-substituted-benzylidenemalononitrile (BMN) thin films have been investigated. The BMN films shows a wide absorption in visible region, which makes it possible for application in OPV and OLED. The band gap energy of BMN thin film was obtained by experimental calculation from cyclic voltammetry. From the current-voltage characteristics, the electrical bistability in such films can be associated with a memory phenomenon. The obtained results of the materials have promising to be applicable for various optoelectronic applications.

  1. SEMICONDUCTOR DEVICES: CuPc/C60 heterojunction thin film optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Murtaza, Imran; Qazi, Ibrahim; Karimov, Khasan S.

    2010-06-01

    The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C60/Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C60, where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons.

  2. Investigations of DC power supplies with optoelectronic transducers and RF energy converters

    NASA Astrophysics Data System (ADS)

    Guzowski, B.; Gozdur, R.; Bernacki, L.; Lakomski, M.

    2016-04-01

    Fiber Distribution Cabinets (FDC) monitoring systems are increasingly popular. However it is difficult to realize such system in passive FDC, due to lack of source of power supply. In this paper investigation of four different DC power supplies with optoelectronic transducers is described. Two converters: photovoltaic power converter and PIN photodiode can convert the light transmitted through the optical fiber to electric energy. Solar cell and antenna RF-PCB are also tested. Results presented in this paper clearly demonstrate that it is possible to build monitoring system in passive FDC. During the tests maximum obtained output power was 11 mW. However all converters provided enough power to excite 32-bit microcontroller with ARM-cores and digital thermometer.

  3. Optoelectronic properties of polymer-nanocrystal composites active at near-infrared wavelengths

    NASA Astrophysics Data System (ADS)

    Solomeshch, Olga; Kigel, Ariel; Saschiuk, Aldona; Medvedev, Vlad; Aharoni, Assaf; Razin, Alexey; Eichen, Yoav; Banin, Uri; Lifshitz, Efrat; Tessler, Nir

    2005-10-01

    We report a systematic study of the optoelectronic processes occurring in composites made of near-infrared (IR) emitting nanocrystals and conjugated polymers. We focus on PbSe and InAs/ZnSe blended with polyphenylenevinylene-type polymers. We find that the process responsible for quenching the visible luminescence of the polymer by the nanocrystal varies depending on the nanocrystal composite. Moreover, the high (66%) energy-transfer efficiency from the polymer to the PbSe nanocrystal does result in significant emission at the near IR. Our measurements suggest that the host may be doping the PbSe nanocrystal, thus making the nonradiative Auger process favorable. For InAs we find the energy levels well aligned inside the polymer band gap, making it an efficient charge trap which acts as a luminescence center. Through two-dimensional numerical modeling of the charge transport in such composite films we highlight the importance of morphology (nanocrystal distribution) control.

  4. The method of testing of the attitude reference systems with optoelectronic sensors

    NASA Astrophysics Data System (ADS)

    Szelmanowski, Andrzej; Michalak, Slawomir

    2003-09-01

    What the paper deals with is the method of testing of the attitude reference systems with the coning excitation/motion applied. A theoretical description of the excitation at issue has been given and followed with a comparative analysis of the excitation generated in the UPG-48 station with a tilting platform. Experimental data of testing of the attitude and heading reference system AHRS LCR-92 system for the non-holonomical excitation/motion have been compared with results effected by some simulation-based tests of numerical models of the attitude and heading reference systems with the optoelectronic sensors. On the grounds of some numerical-simulation-effected findings gained with the AutoCAD packet, a concept of a coning-excitation-generating measuring station has been developed at the Air Force Institute of Technology and presented in this paper.

  5. Optoelectronic response and excitonic properties of monolayer MoS2

    NASA Astrophysics Data System (ADS)

    Ben Amara, Imen; Ben Salem, Emna; Jaziri, Sihem

    2016-08-01

    Ab initio, electronic energy bands of MoS2 single layer are reported within the local density functional approximation. The inclusion of spin orbit coupling reveals the presence of two excitons A and B. We also discuss the change of physical properties of MoS2 from multilayer and bulk counterparts. The nature of the band gap changes from indirect to direct when the thickness is reduced to a single monolayer. The imaginary and real dielectric functions are investigated. Refractive index and birefringence are also reported. The results suggest that MoS2 is suitable for potential applications in optoelectronic and photovoltaic devices. The ab initio study is essential to propose the crucial parameters for the analytical model used for A-B exciton properties of the monolayer MoS2. From a theoretical point of view, we consider how the exciton behavior evolves under environmental dielectrics.

  6. Brownian motion properties of optoelectronic random bit generators based on laser chaos.

    PubMed

    Li, Pu; Yi, Xiaogang; Liu, Xianglian; Wang, Yuncai; Wang, Yongge

    2016-07-11

    The nondeterministic property of the optoelectronic random bit generator (RBG) based on laser chaos are experimentally analyzed from two aspects of the central limit theorem and law of iterated logarithm. The random bits are extracted from an optical feedback chaotic laser diode using a multi-bit extraction technique in the electrical domain. Our experimental results demonstrate that the generated random bits have no statistical distance from the Brownian motion, besides that they can pass the state-of-the-art industry-benchmark statistical test suite (NIST SP800-22). All of them give a mathematically provable evidence that the ultrafast random bit generator based on laser chaos can be used as a nondeterministic random bit source. PMID:27410852

  7. Predicting the optoelectronic properties of nanowire films based on control of length polydispersity.

    PubMed

    Large, Matthew J; Burn, Jake; King, Alice A; Ogilvie, Sean P; Jurewicz, Izabela; Dalton, Alan B

    2016-05-09

    We demonstrate that the optoelectronic properties of percolating thin films of silver nanowires (AgNWs) are predominantly dependent upon the length distribution of the constituent AgNWs. A generalized expression is derived to describe the dependence of both sheet resistance and optical transmission on this distribution. We experimentally validate the relationship using ultrasonication to controllably vary the length distribution. These results have major implications where nanowire-based films are a desirable material for transparent conductor applications; in particular when application-specific performance criteria must be met. It is of particular interest to have a simple method to generalize the properties of bulk films from an understanding of the base material, as this will speed up the optimisation process. It is anticipated that these results may aid in the adoption of nanowire films in industry, for applications such as touch sensors or photovoltaic electrode structures.

  8. OMVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics (title change from A)

    SciTech Connect

    HAN,JUNG; FIGIEL,JEFFREY J.; PETERSEN,GARY A.; MYERS JR.,SAMUEL M.; CRAWFORD,MARY H.; BANAS,MICHAEL ANTHONY; HEARNE,SEAN JOSEPH

    2000-01-18

    We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GrdnN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

  9. Chemical and Structural Diversity in Eumelanins – Unexplored Bio-Optoelectronic Materials**

    PubMed Central

    d’Ischia, Marco; Napolitano, Alessandra; Pezzella, Alessandro; Meredith, Paul; Sarna, Tadeusz

    2009-01-01

    Eumelanins, the characteristic black insoluble and heterogeneous bio-polymers of human skin, hair and eyes, have intrigued and challenged generations of chemists, physicists and biologists because of their unique structural and optoelectronic properties. Recently, an organic chemistry approach has been combined with advanced spectroscopic and imaging techniques, theoretical calculations and methods of condensed matter physics to gradually force these materials to reveal their secrets. Here we review the latest advances in the field with a view to showing how the emerging knowledge is not only helping us explain eumelanin functionality, but may also be translated into effective strategies for exploiting their properties to create a new class of biologically inspired high tech materials. PMID:19294706

  10. Optoelectronic measurement of x-ray synchrotron pulses: A proof of concept demonstration

    SciTech Connect

    Durbin, Stephen M.; Caffee, Marc; Savikhin, Sergei; Mahmood, Aamer; Dufresne, Eric M.; Wen, Haidan; Li, Yuelin

    2013-02-04

    Optoelectronic detection using photoconductive coplanar stripline devices has been applied to measuring the time profile of x-ray synchrotron pulses, a proof of concept demonstration that may lead to improved time-resolved x-ray studies. Laser sampling of current vs time delay between 12 keV x-ray and 800 nm laser pulses reveal the {approx}50 ps x-ray pulse width convoluted with the {approx}200 ps lifetime of the conduction band carriers. For GaAs implanted with 8 MeV protons, a time profile closer to the x-ray pulse width is observed. The protons create defects over the entire depth sampled by the x-rays, trapping the x-ray excited conduction electrons and minimizing lifetime broadening of the electrical excitation.

  11. Stacking nature and band gap opening of graphene: Perspective for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Ullah, Naeem; Zhang, R. Q.; Murtaza, G.; Yar, Abdullah; Mahmood, Asif

    2016-11-01

    Using first principles density functional theory calculations, we have performed geometrical and electronic structure calculations of two-dimensional graphene(G) sheet on the hexagonal boron nitride (h-BN) with different stacking orders. We found that AB stacking appears as the ground state while AA-stacking is a local minima. Band gap opening in the hybrid G/h-BN is sensitive to the interlayer distance and stacking arrangement. Charge redistribution in the graphene sheet determined the band gap opening where the onsite energy difference between carbon lattice atoms of G-sheet takes place. Similar behavior can be observed for the proposed h-BN/G/h-BN tri-layer system. Stacking resolved calculations of the absorptive part of complex dielectric function and optical conductivity revealed the importance of the proposed hybrid systems in the optoelectronics.

  12. Predicting the optoelectronic properties of nanowire films based on control of length polydispersity

    PubMed Central

    Large, Matthew J.; Burn, Jake; King, Alice A.; Ogilvie, Sean P.; Jurewicz, Izabela; Dalton, Alan B.

    2016-01-01

    We demonstrate that the optoelectronic properties of percolating thin films of silver nanowires (AgNWs) are predominantly dependent upon the length distribution of the constituent AgNWs. A generalized expression is derived to describe the dependence of both sheet resistance and optical transmission on this distribution. We experimentally validate the relationship using ultrasonication to controllably vary the length distribution. These results have major implications where nanowire-based films are a desirable material for transparent conductor applications; in particular when application-specific performance criteria must be met. It is of particular interest to have a simple method to generalize the properties of bulk films from an understanding of the base material, as this will speed up the optimisation process. It is anticipated that these results may aid in the adoption of nanowire films in industry, for applications such as touch sensors or photovoltaic electrode structures. PMID:27158132

  13. Optoelectronic properties of novel amorphous CuAlO2/ZnO NWs based heterojunction

    NASA Astrophysics Data System (ADS)

    Bu, Ian Y. Y.

    2013-08-01

    Amorphous p-type CuAlO2 thin films were grown onto n-type crystalline ZnO NWs forming a heterojunction through the combination of sol-gel process and hydrothermal growth method. The effects of temperature on structure and optoelectronic properties of CuAlO2 thin films were investigated through various measurement techniques. It was found that the derived CuAlO2 is Al-rich with thin film. UV-Vis measurements showed that the deposited CuAlO2 films are semi-transparent with maximum transmittance ∼82% at 500 nm. Electrical characterization and integration into pn junction confirms that the amorphous CuAlO2 is p-type and exhibited photovoltaic behavior.

  14. Specificity of software cooperating with an optoelectronic sensor in the pulse oximeter system

    NASA Astrophysics Data System (ADS)

    Cysewska-Sobusiak, Anna; Wiczynski, Grzegorz; Jedwabny, Tomasz

    1995-06-01

    Specificity of a software package composed of two parts which control an optoelectronic sensor of the computer-aided system made to realize the noninvasive measurements of the arterial blood oxygen saturation as well as some parameters of the peripheral pulse waveform, has been described. Principles of the transmission variant of the one and only noninvasive measurement method, so-called pulse oximetry, has been utilized. The software co-ordinates the suitable cooperation of an IBM PC compatible microcomputer with the sensor and one specialized card. This novel card is a key part of the whole measuring system which some application fields are extended in comparison to pulse oximeters commonly attainable. The user-friendly MS Windows graphical environment which creates the system to be multitask and non-preemptive, has been used to design the specific part of the programming presented here. With this environment, sophisticated tasks of the software package can be performed without excessive complication.

  15. p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties

    SciTech Connect

    Wang, Ming-Zheng; Xie, Wei-Jie; Hu, Han; Yu, Yong-Qiang; Wu, Chun-Yan; Wang, Li; Luo, Lin-Bao

    2013-11-18

    Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm{sup 2}V{sup −1}s{sup −1} and a hole concentration of 1.67 × 10{sup 17} cm{sup −3}, respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application.

  16. DOC II 32-bit digital optical computer: optoelectronic hardware and software

    NASA Astrophysics Data System (ADS)

    Stone, Richard V.; Zeise, Frederick F.; Guilfoyle, Peter S.

    1991-12-01

    This paper describes current electronic hardware subsystems and software code which support OptiComp's 32-bit general purpose digital optical computer (DOC II). The reader is referred to earlier papers presented in this section for a thorough discussion of theory and application regarding DOC II. The primary optoelectronic subsystems include the drive electronics for the multichannel acousto-optic modulators, the avalanche photodiode amplifier, as well as threshold circuitry, and the memory subsystems. This device utilizes a single optical Boolean vector matrix multiplier and its VME based host controller interface in performing various higher level primitives. OptiComp Corporation wishes to acknowledge the financial support of the Office of Naval Research, the National Aeronautics and Space Administration, the Rome Air Development Center, and the Strategic Defense Initiative Office for the funding of this program under contracts N00014-87-C-0077, N00014-89-C-0266 and N00014-89-C- 0225.

  17. Displacement measurement using an optoelectronic oscillator with an intra-loop Michelson interferometer.

    PubMed

    Lee, Jehyun; Park, Sooyoung; Seo, Dae Han; Yim, Sin Hyuk; Yoon, Seokchan; Cho, D

    2016-09-19

    We report on measurement of small displacements with sub-nanometer precision using an optoelectronic oscillator (OEO) with an intra-loop Michelson interferometer. In comparison with conventional homodyne and heterodyne detection methods, where displacement appears as a power change or a phase shift, respectively, in the OEO detection, the displacement produces a shift in the oscillation frequency. In comparison with typical OEO sensors, where the frequency shift is proportional to the OEO oscillation frequency in radio-frequency domain, the frequency shift in our method with an intra-loop interferometer is proportional to an optical frequency. We constructed a hybrid apparatus and compared characteristics of the OEO and heterodyne detection methods. PMID:27661926

  18. A new silicon phase with direct band gap and novel optoelectronic properties

    SciTech Connect

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-09-23

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications.

  19. A new silicon phase with direct band gap and novel optoelectronic properties

    DOE PAGES

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-09-23

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising materialmore » for optoelectronic applications.« less

  20. A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties

    PubMed Central

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-01-01

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications. PMID:26395926

  1. Optoelectronic properties and charge transfer in donor-acceptor all-conjugated diblock copolymers.

    SciTech Connect

    Botiz, I.; Schaller, R. D.; Verduzco, R.; Darling, S. B.

    2011-05-12

    All-conjugated block copolymers, which can self-assemble into well-ordered morphologies, provide exciting opportunities to rationally design and control the nanoscale organization of electron-donor and electron-acceptor moieties in optoelectronic active layers. Here we report on the steady-state and time-resolved optical characterization of block copolymer films and solutions containing poly(3-hexylthiophene) as the donor block and poly(9,9-dioctylfluorene) with and without copolymerization with benzothiadiazole as the acceptor block. Transient absorption measurements suggest rapid charge transfer occurs in both systems, with higher efficiency observed in the latter composition. These results indicate that this class of materials has promise in preparing highly ordered bulk heterojunction all-polymer organic photovoltaic devices.

  2. Shape engineering for electronic and optoelectronic properties of Si nanostructure solar cells

    NASA Astrophysics Data System (ADS)

    He, Yan; Zhao, Yipeng; Quan, Jun; Ouyang, Gang

    2016-10-01

    An analytical model is developed to explore the shape-dependent electronic and optoelectronic properties of silicon nanostructure solar cells, including nanocones (NCs), nanowires (NWs), and truncated-nanocones (TNCs), on the basis of atomic-bond-relaxation consideration and detailed balance principle. It is found that the inhomogeneous NCs can not only make the band gap shrink gradually from the top to the bottom, but also suppress the surface recombination and enhance light absorption. Moreover, the optimal performance of silicon nanostructures can be achieved through modulating the geometrical parameters. Strikingly, the SiNCs show the highest solar conversion efficiency compared with that of NWs and TNCs under identical conditions, which suggest that this kind of nanostructures could be expected to be applicable for the new-typed and friendly alternative solar cell unit.

  3. Ba2TeO as an optoelectronic material: First-principles study

    SciTech Connect

    Sun, Jifeng; Shi, Hongliang; Du, Mao-Hua; Siegrist, Theo; Singh, David J.

    2015-05-21

    The band structure, optical and defects properties of Ba2TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or transparent conducting material. Ba2TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical band gap1. We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show a infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba2TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of the donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.

  4. Importance of pulse reversal effect of CdSe thin films for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Saaminathan, V.; Murali, K. R.

    2005-06-01

    Systematic studies of cadmium selenide thin films were prepared by without and with pulse reversal plating technique. In the present work, preparation of CdSe thin films was reported with lower duty cycle and pulse reversal effect. Due to these effects electrical and opto-electronic property of the material were changed. The thin film of CdSe was deposited on cleaned conducting substrates like titanium, SnO 2, nickel and stainless steel, respectively. The pulse plated CdSe films without and with pulse reversal films were heat treated and characterized by XRD, optical studies, scanning electron microscopy and photo electrochemical properties. Semiconductor parameters were estimated for without and with pulse plating technique. The barrier height Φ was calculated for CdSe deposited on different conducting substrates.

  5. Optoelectronic Characterization of Infrared Photodetector Fabricated on Ge-on-Si Substrate.

    PubMed

    Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Kim, Taek Sung; Shim, Kyu-Hwan; Hong, Hyobong; Choi, Chel-Jong

    2015-10-01

    We report on the optoelectronic characterization of Ge p-i-n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surface roughness of epitaxial layer was estimated to be 2 x 10(18) cm(-3) and 1.2 nm, respectively. The photodetector were characterized with respect to their dark, photocurrent and responsivities in the wavelength range of 1530-1630 nm. At 1550 nm wavelength, responsivity of 0.32 A/W was measured for a reverse bias of 1 V, corresponding to 25% external quantum efficiency, without an optimal antireflection coating. Responsivity drastically reduced from 1560 nm wavelength which could be attributed to decreased absorption of Ge at room temperature.

  6. CMOS On-Chip Optoelectronic Neural Interface Device with Integrated Light Source for Optogenetics

    NASA Astrophysics Data System (ADS)

    Sawadsaringkarn, Y.; Kimura, H.; Maezawa, Y.; Nakajima, A.; Kobayashi, T.; Sasagawa, K.; Noda, T.; Tokuda, T.; Ohta, J.

    2012-03-01

    A novel optoelectronic neural interface device is proposed for target applications in optogenetics for neural science. The device consists of a light emitting diode (LED) array implemented on a CMOS image sensor for on-chip local light stimulation. In this study, we designed a suitable CMOS image sensor equipped with on-chip electrodes to drive the LEDs, and developed a device structure and packaging process for LED integration. The prototype device produced an illumination intensity of approximately 1 mW with a driving current of 2.0 mA, which is expected to be sufficient to activate channelrhodopsin (ChR2). We also demonstrated the functions of light stimulation and on-chip imaging using a brain slice from a mouse as a target sample.

  7. Optical and morphological characteristics of organic thin films for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Zhong, Zhiyou; Sun, Fenglou

    2007-12-01

    Organic semiconductor thin films of tri-(8-hydroxyquinoline)-aluminum (Alq), 9,10-di-(2-naphthyl)-anthracene (ADN), and N,N'bis(naphthalen-1-yl)-N,N'bis(phenyl)-benzidine (NPB) for optoelectronic devices were deposited onto glass substrates by vacuum sublimation technique. The surface morphology and roughness of the thin film were characterized by means of atomic force microscopy (AFM). Experimental results indicate that all thin films present similar granular topography but different surface roughness. In addition, the optical transmittance spectra of thin films were measured by a double beam spectrophotometer and their corresponding optical properties were investigated. The complex refractive index and the optical band gap of thin films were obtained, respectively. Meanwhile, the dispersion behavior of the refractive index was studied in terms of Wemple-DiDomenico single oscillator model, and the oscillator parameters were achieved.

  8. Brownian motion properties of optoelectronic random bit generators based on laser chaos.

    PubMed

    Li, Pu; Yi, Xiaogang; Liu, Xianglian; Wang, Yuncai; Wang, Yongge

    2016-07-11

    The nondeterministic property of the optoelectronic random bit generator (RBG) based on laser chaos are experimentally analyzed from two aspects of the central limit theorem and law of iterated logarithm. The random bits are extracted from an optical feedback chaotic laser diode using a multi-bit extraction technique in the electrical domain. Our experimental results demonstrate that the generated random bits have no statistical distance from the Brownian motion, besides that they can pass the state-of-the-art industry-benchmark statistical test suite (NIST SP800-22). All of them give a mathematically provable evidence that the ultrafast random bit generator based on laser chaos can be used as a nondeterministic random bit source.

  9. Ba2TeO as an optoelectronic material: First-principles study

    DOE PAGES

    Sun, Jifeng; Shi, Hongliang; Du, Mao-Hua; Siegrist, Theo; Singh, David J.

    2015-05-21

    The band structure, optical and defects properties of Ba2TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or transparent conducting material. Ba2TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical band gap1. We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show a infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba2TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of themore » donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.« less

  10. Next-generation optoelectronic components enabled by direct-write microprinting technology

    NASA Astrophysics Data System (ADS)

    Hayes, Donald J.; Chen, Ting

    2004-08-01

    Direct write microprinting technologies are now being developed and used across a wide spectrum of optoelectronic applications, because they provide opportunities for manufacturing a series of components in micrometer scales and in large array size with reduced cost. Micro-optic structures have been printed not only as stand-alone components, but also directly onto other active and passive components, such as VCSEL, photodiode, optical fiber, etc., to form high performance assemblies. These assemblies can be further integrated with electronic circuits via solder ball printing to construct miniature and high sensitivity sensing devices, such as photodiode array detector, fluorescence probe, etc. By implementing MEMS technologies, micro-clampers have also been developed for the alignment and packaging of miniature, multi-channel sensing devices.

  11. Temperature dependence of the properties of DBR mirrors used in surface normal optoelectronic devices

    NASA Technical Reports Server (NTRS)

    Dudley, J. J.; Crawford, D. L.; Bowers, J. E.

    1992-01-01

    The variation in the center wavelength of distributed Bragg reflectors used in optoelectronic devices, such as surface emitting lasers and Fabry-Perot modulators, is measured as the temperature of the mirrors changes over the range 25 C to 105 C. An analytic expression for the shift in center wavelength with temperature is presented. The mirrors measured are made of InP/InGaAsP, GaAs/AlAs, and Si/SiN(x). The linear shifts in center wavelength are 0.110 +/- 0.003 nm/C, 0.087 +/- 0.003 nm/C, and 0.067 +/- 0.007 nm/C for the InP/InGaAsP, GaAs/AlAs, and Si/SiN mirrors, respectively. Based on these data, the change in penetration depth with temperature is calculated.

  12. Optoelectronic technology profiles: motivating and developing research skills in undergraduate students

    NASA Astrophysics Data System (ADS)

    Kane, D. M.

    2009-06-01

    A case study is described of the redesign of an assessment task - the writing of an Optoelectronic Technology profile - to achieve improved outcomes in student education and capability development, in particular, research skills. Attention is drawn to the value of a formally scheduled discussion between teacher and student around controlling the scope of the profile via an appropriately constructed "brief", and the selection and evaluation of the reference resources to be used in completing the task. Student motivation is improved through "student publishing" and encouraging students to regard their technology profile as an example of their work that can be shown to potential employers, possibly as part of a portfolio. Students have the choice as to whether they will also use the technology profile task as a vehicle to develop teamwork experience and skills.

  13. Silver Nanoparticle Controlled Synthesis and Implications in Spectroscopy, Biomedical and Optoelectronics Applications

    NASA Astrophysics Data System (ADS)

    Stamplecoskie, Kevin

    This thesis describes the photochemical synthesis of silver nano particles, several ways to make these particles as well as control the size and shape of the colloidal particles. Understanding the primary reactions in photochemical nanoparticle formation has lead to important contributions to the overall mechanism of metal nanoparticle synthesis. The size and shape control of the particles is shown to have important implications for the Raman spectrum of surface bound molecules. The particles have also been used in antibacterial properties where it was shown that silver nanoparticles are more antibacterial than the corresponding silver cation, while remaining non-toxic to several common cell lines. The particles were also shown to have some interesting properties that can be exploited in lithography and optoelectronics.

  14. Optoelectronic optimization of mode selective converter based on liquid crystal on silicon

    NASA Astrophysics Data System (ADS)

    Wang, Yongjiao; Liang, Lei; Yu, Dawei; Fu, Songnian

    2016-03-01

    We carry out comprehensive optoelectronic optimization of mode selective converter used for the mode division multiplexing, based on liquid crystal on silicon (LCOS) in binary mode. The conversion error of digital-to-analog (DAC) is investigated quantitatively for the purpose of driving the LCOS in the application of mode selective conversion. Results indicate the DAC must have a resolution of 8-bit, in order to achieve high mode extinction ratio (MER) of 28 dB. On the other hand, both the fast axis position error of half-wave-plate (HWP) and rotation angle error of Faraday rotator (FR) have negative influence on the performance of mode selective conversion. However, the commercial products provide enough angle error tolerance for the LCOS-based mode selective converter, taking both of insertion loss (IL) and MER into account.

  15. Waterproof AlInGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics

    NASA Astrophysics Data System (ADS)

    Kim, Rak-Hwan; Kim, Dae-Hyeong; Xiao, Jianliang; Kim, Bong Hoon; Park, Sang-Il; Panilaitis, Bruce; Ghaffari, Roozbeh; Yao, Jimin; Li, Ming; Liu, Zhuangjian; Malyarchuk, Viktor; Kim, Dae Gon; Le, An-Phong; Nuzzo, Ralph G.; Kaplan, David L.; Omenetto, Fiorenzo G.; Huang, Yonggang; Kang, Zhan; Rogers, John A.

    2010-11-01

    Inorganic light-emitting diodes and photodetectors represent important, established technologies for solid-state lighting, digital imaging and many other applications. Eliminating mechanical and geometrical design constraints imposed by the supporting semiconductor wafers can enable alternative uses in areas such as biomedicine and robotics. Here we describe systems that consist of arrays of interconnected, ultrathin inorganic light-emitting diodes and photodetectors configured in mechanically optimized layouts on unusual substrates. Light-emitting sutures, implantable sheets and illuminated plasmonic crystals that are compatible with complete immersion in biofluids illustrate the suitability of these technologies for use in biomedicine. Waterproof optical-proximity-sensor tapes capable of conformal integration on curved surfaces of gloves and thin, refractive-index monitors wrapped on tubing for intravenous delivery systems demonstrate possibilities in robotics and clinical medicine. These and related systems may create important, unconventional opportunities for optoelectronic devices.

  16. Nanocellulose-based Translucent Diffuser for Optoelectronic Device Applications with Dramatic Improvement of Light Coupling.

    PubMed

    Wu, Wei; Tassi, Nancy G; Zhu, Hongli; Fang, Zhiqiang; Hu, Liangbing

    2015-12-01

    Nanocellulose is a biogenerated and biorenewable organic material. Using a process based on 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO)/NaClO/NaBr system, a highly translucent and light-diffusive film consisting of many layers of nanocellulose fibers and wood pulp microfibers was made. The film demonstrates a combination of large optical transmittance of ∼90% and tunable diffuse transmission of up to ∼78% across the visible and near-infrared spectra. The detailed characterizations of the film indicate the combination of high optical transmittance and haze is due to the film's large packing density and microstructured surface. The superior optical properties make the film a translucent light diffuser and applicable for improving the efficiencies of optoelectronic devices such as thin-film silicon solar cells and organic light-emitting devices. PMID:26572592

  17. Novel optoelectronic devices; Proceedings of the Meeting, The Hague, Netherlands, Mar. 31-Apr. 2, 1987

    NASA Technical Reports Server (NTRS)

    Adams, Michael J. (Editor)

    1987-01-01

    The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.

  18. Pin-in-paste DFM constraints in vapor phase soldering technology for optoelectronic components

    NASA Astrophysics Data System (ADS)

    Plotog, I.; Varzaru, G.; Turcu, C.; Cucu, T. C.; Svasta, P.; Vasile, A.

    2009-01-01

    The topical trends in the field of electronic equipments developing are a large integration on pcb support for different types of components and devices, including optoelectronic type, from small to medium power, in condition of reducing physical dimensions, in order to create new electronic products in short time at lower manufacturing cost. The condition for economical success for a product is to assure the product, even from the conception stage, with a high level of quality by reducing the product cost; to conclude, designing according with production possibilities by using Design For Manufacturing (DFM) concept. This desideratum depends on the conception and design of the product. According to DFM concept, a successful project assures design requirements for the system and finally for printed circuit boards (PCB), accomplishes the assembling technology constraints defined by international standards in the field of electronic packaging, such as IPC or Restriction of Hazardous Substances Directive. Active from July 1, 2006, the RoHS Directive 2002/95/EC adopted in February 2003 by the European Union, and adopted in Romania by HG - 992/2005, completed by HG - 816/2006, call forth important consequences in assembling technologies. In order to minimize manufacturing cost, Pin-In-Paste offers solutions for complete assembling of high complexity PCBs in Vapor Phase Technology using only one reflow machine avoiding overheating of the assemblies relatively to infrared reflow oven. Starting from RoHS consequences analysis, especially thermal profile, the paper presents the applied research performed in the assembling lines on VPS machine in order to define the design requirements for Pin-In-Paste dedicated stencils and PCBs, experiments result and conclusions regarding DFM requirements for lead-free assembling technologies of optoelectronic components. Finally, scientific and practical conclusions shall be drawn to configure the optimum implementation way for Pin

  19. Respiratory kinematics by optoelectronic analysis of chest-wall motion and ultrasonic imaging of the diaphragm

    NASA Astrophysics Data System (ADS)

    Aliverti, Andrea; Pedotti, Antonio; Ferrigno, Giancarlo; Macklem, P. T.

    1998-07-01

    Although from a respiratory point of view, compartmental volume change or lack of it is the most crucial variable, it has not been possible to measure the volume of chest wall compartments directly. Recently we developed a new method based on a optoelectronic motion analyzer that can give the three-dimensional location of many markers with the temporal and spatial accuracy required for respiratory measurements. Marker's configuration has been designed specifically to measure the volume of three chest wall compartments, the pulmonary and abdominal rib cage compartments and the abdomen, directly. However, it can not track the exact border between the two rib cage compartments (pulmonary and abdominal) which is determined by the cephalic extremity of the area of apposition of the diaphragm to the inner surface of the rib cage, and which can change systematically as a result of disease processes. The diaphragm displacement can be detected by ultrasonography. In the present study, we propose an integrated system able to investigate the relationships between external (chest wall) and internal (diaphragm) movements of the different respiratory structures by simultaneous external imaging with the optoelectronic system combined with internal kinematic imaging using ultrasounds. 2D digitized points belonging to the lower lung margin, taken from ultrasonographic views, are mapped into the 3D space, where chest wall markers are acquired. Results are shown in terms of accuracy of 3D probe location, relative movement between the probe and the body landmarks, dynamic relationships between chest wall volume and position of the diaphragm during quiet breathing, slow inspirations, relaxations and exercise.

  20. Integration of optoelectronics and MEMS by free-space micro-optics

    SciTech Connect

    WARREN,MIAL E.; SPAHN,OLGA B.; SWEATT,WILLIAM C.; SHUL,RANDY J.; WENDT,JOEL R.; VAWTER,GREGORY A.; KRYGOWSKI,TOM W.; REYES,DAVID NMN; RODGERS,M. STEVEN; SNIEGOWSKI,JEFFRY J.

    2000-06-01

    This report represents the completion of a three-year Laboratory-Directed Research and Development (LDRD) program to investigate combining microelectromechanical systems (MEMS) with optoelectronic components as a means of realizing compact optomechanical subsystems. Some examples of possible applications are laser beam scanning, switching and routing and active focusing, spectral filtering or shattering of optical sources. The two technologies use dissimilar materials with significant compatibility problems for a common process line. This project emphasized a hybrid approach to integrating optoelectronics and MEMS. Significant progress was made in developing processing capabilities for adding optical function to MEMS components, such as metal mirror coatings and through-vias in the substrate. These processes were used to demonstrate two integration examples, a MEMS discriminator driven by laser illuminated photovoltaic cells and a MEMS shutter or chopper. Another major difficulty with direct integration is providing the optical path for the MEMS components to interact with the light. The authors explored using folded optical paths in a transparent substrate to provide the interconnection route between the components of the system. The components can be surface-mounted by flip-chip bonding to the substrate. Micro-optics can be fabricated into the substrate to reflect and refocus the light so that it can propagate from one device to another and them be directed out of the substrate into free space. The MEMS components do not require the development of transparent optics and can be completely compatible with the current 5-level polysilicon process. They report progress on a MEMS-based laser scanner using these concepts.