Science.gov

Sample records for oversampled optoelectronic analog-digital

  1. Telemedicine optoelectronic biomedical data processing system

    NASA Astrophysics Data System (ADS)

    Prosolovska, Vita V.

    2010-08-01

    The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

  2. On automatic synthesis of analog/digital circuits

    SciTech Connect

    Beiu, V.

    1998-12-31

    The paper builds on a recent explicit numerical algorithm for Kolmogorov`s superpositions, and will show that in order to synthesize minimum size (i.e., size-optimal) circuits for implementing any Boolean function, the nonlinear activation function of the gates has to be the identity function. Because classical and--or implementations, as well as threshold gate implementations require exponential size, it follows that size-optimal solutions for implementing arbitrary Boolean functions can be obtained using analog (or mixed analog/digital) circuits. Conclusions and several comments are ending the paper.

  3. Configurable analog-digital conversion using the neural engineering framework

    PubMed Central

    Mayr, Christian G.; Partzsch, Johannes; Noack, Marko; Schüffny, Rene

    2014-01-01

    Efficient Analog-Digital Converters (ADC) are one of the mainstays of mixed-signal integrated circuit design. Besides the conventional ADCs used in mainstream ICs, there have been various attempts in the past to utilize neuromorphic networks to accomplish an efficient crossing between analog and digital domains, i.e., to build neurally inspired ADCs. Generally, these have suffered from the same problems as conventional ADCs, that is they require high-precision, handcrafted analog circuits and are thus not technology portable. In this paper, we present an ADC based on the Neural Engineering Framework (NEF). It carries out a large fraction of the overall ADC process in the digital domain, i.e., it is easily portable across technologies. The analog-digital conversion takes full advantage of the high degree of parallelism inherent in neuromorphic networks, making for a very scalable ADC. In addition, it has a number of features not commonly found in conventional ADCs, such as a runtime reconfigurability of the ADC sampling rate, resolution and transfer characteristic. PMID:25100933

  4. Configurable analog-digital conversion using the neural engineering framework.

    PubMed

    Mayr, Christian G; Partzsch, Johannes; Noack, Marko; Schüffny, Rene

    2014-01-01

    Efficient Analog-Digital Converters (ADC) are one of the mainstays of mixed-signal integrated circuit design. Besides the conventional ADCs used in mainstream ICs, there have been various attempts in the past to utilize neuromorphic networks to accomplish an efficient crossing between analog and digital domains, i.e., to build neurally inspired ADCs. Generally, these have suffered from the same problems as conventional ADCs, that is they require high-precision, handcrafted analog circuits and are thus not technology portable. In this paper, we present an ADC based on the Neural Engineering Framework (NEF). It carries out a large fraction of the overall ADC process in the digital domain, i.e., it is easily portable across technologies. The analog-digital conversion takes full advantage of the high degree of parallelism inherent in neuromorphic networks, making for a very scalable ADC. In addition, it has a number of features not commonly found in conventional ADCs, such as a runtime reconfigurability of the ADC sampling rate, resolution and transfer characteristic.

  5. Immune Centroids Oversampling Method for Binary Classification

    PubMed Central

    Ai, Xusheng; Wu, Jian; Cui, Zhiming

    2015-01-01

    To improve the classification performance of imbalanced learning, a novel oversampling method, immune centroids oversampling technique (ICOTE) based on an immune network, is proposed. ICOTE generates a set of immune centroids to broaden the decision regions of the minority class space. The representative immune centroids are regarded as synthetic examples in order to resolve the imbalance problem. We utilize an artificial immune network to generate synthetic examples on clusters with high data densities, which can address the problem of synthetic minority oversampling technique (SMOTE), which lacks reflection on groups of training examples. Meanwhile, we further improve the performance of ICOTE via integrating ENN with ICOTE, that is, ICOTE + ENN. ENN disposes the majority class examples that invade the minority class space, so ICOTE + ENN favors the separation of both classes. Our comprehensive experimental results show that two proposed oversampling methods can achieve better performance than the renowned resampling methods. PMID:25834570

  6. Optical Oversampled Analog-to-Digital Conversion

    DTIC Science & Technology

    1992-06-29

    Introduction 1 1.1 Background and Motivation........................... 2 1.1.1 Nyquist Rate Conversion........................ 3 1.1.2 Optical A/ D ...processor [9] was used with the electronic analog input signal driving an optical beam deflector . This method of optical A/ D conversion was limited...implement an optical oversampled A/ D converter. From the theoretical development in Chapter 2 , there are two principal functions which require optical

  7. Nokia PureView oversampling technology

    NASA Astrophysics Data System (ADS)

    Vuori, Tero; Alakarhu, Juha; Salmelin, Eero; Partinen, Ari

    2013-03-01

    This paper describes Nokia's PureView oversampling imaging technology as well as the product, Nokia 808 PureView, featuring it. The Nokia PureView imaging technology is the combination of a large, super high resolution 41Mpix with high performance Carl Zeiss optics. Large sensor enables a pixel oversampling technique that reduces an image taken at full resolution into a lower resolution picture, thus achieving higher definition and light sensitivity. One oversampled super pixel in image file is formed by using many sensor pixels. A large sensor enables also a lossless zoom. If a user wants to use the lossless zoom, the sensor image is cropped. However, up-scaling is not needed as in traditional digital zooming usually used in mobile devices. Lossless zooming means image quality that does not have the digital zooming artifacts as well as no optical zooming artifacts like zoom lens system distortions. Zooming with PureView is also completely silent. PureView imaging technology is the result of many years of research and development and the tangible fruits of this work are exceptional image quality, lossless zoom, and superior low light performance.

  8. BacNet and Analog/Digital Interfaces of the Building Controls Virtual Testbed

    SciTech Connect

    Nouidui, Thierry Stephane; Wetter, Michael; Li, Zhengwei; Pang, Xiufeng; Bhattacharya, Prajesh; Haves, Philip

    2011-11-01

    This paper gives an overview of recent developments in the Building Controls Virtual Test Bed (BCVTB), a framework for co-simulation and hardware-in-the-loop. First, a general overview of the BCVTB is presented. Second, we describe the BACnet interface, a link which has been implemented to couple BACnet devices to the BCVTB. We present a case study where the interface was used to couple a whole building simulation program to a building control system to assess in real-time the performance of a real building. Third, we present the ADInterfaceMCC, an analog/digital interface that allows a USB-based analog/digital converter to be linked to the BCVTB. In a case study, we show how the link was used to couple the analog/digital converter to a building simulation model for local loop control.

  9. Optical hybrid analog-digital signal processing based on spike processing in neurons

    NASA Astrophysics Data System (ADS)

    Fok, Mable P.; Tian, Yue; Rosenbluth, David; Deng, Yanhua; Prucnal, Paul R.

    2011-09-01

    Spike processing is one kind of hybrid analog-digital signal processing, which has the efficiency of analog processing and the robustness to noise of digital processing. When instantiated with optics, a hybrid analog-digital processing primitive has the potential to be scalable, computationally powerful, and have high operation bandwidth. These devices open up a range of processing applications for which electronic processing is too slow. Our approach is based on a hybrid analog/digital computational primitive that elegantly implements the functionality of an integrate-and-fire neuron using a Ge-doped non-linear optical fiber and off-the-shelf semiconductor devices. In this paper, we introduce our photonic neuron architecture and demonstrate the feasibility of implementing simple photonic neuromorphic circuits, including the auditory localization algorithm of the barn owl, which is useful for LIDAR localization, and the crayfish tail-flip escape response.

  10. Photonic analog-to-digital conversion based on oversampling techniques

    NASA Astrophysics Data System (ADS)

    Shoop, Barry L.; Das, Pankaj K.; Ressler, Eugene K., Jr.; Talty, Timothy J.

    2000-07-01

    A novel photonic approach to analog-to-digital (A/D) conversion based on temporal and spatial oversampling techniques in conjunction with a smart pixel hardware implementation of a neural algorithm is described. In this approach, the input signal is first sampled at a rate higher than that required by the Nyquist criterion and then presented spatially as the input to the 2D error diffusion neural network consisting of M X N pixels. The neural network processes the input oversampled analog image and produces an M X N pixel binary output image which is an optimum representation of the input analog signal. Upon convergence, the neural network minimizes an energy function representing the frequency-weighted squared error between the input analog image and the output halftoned image. Decimation and low-pass filtering techniques, common to oversampling A/D converters, digitally sum and average the M X N pixel output binary image using high-speed digital electronic circuitry. By employing a 2D smart pixel neural approach to oversampling A/D conversion, each pixel constitutes a simple oversampling modulator thereby producing a distributed A/D architecture. Spectral noise shaping across the array diffuses quantization error thereby improving the signal-to-noise ratio performance. Here, each quantizer within the network is embedded in a fully- connected, distributed mesh feedback loop which spectrally shapes the overall quantization noise significantly reducing the effects of component mismatch typically associated with parallel or channelized A/D approaches. The 2D neural array provides higher aggregate bit rates which can extend the useful bandwidth of oversampling converters.

  11. The analog-digital conversion equipment of the 'Orbita-RV' equipment

    NASA Astrophysics Data System (ADS)

    Tikhonov, O. S.; Rabinovich, G. V.; Pustygin, E. V.; Kantor, L. Ia.; Chekhovskii, E. Ia.

    1982-11-01

    The analog-digital conversion (ADC) equipment of the Orbita-RV communication system serves to convert sound-broadcasting signals to digital form for transmission in standard digital bit streams over satellite or terrestrial communication links. The ADC equipment also combines standard digital bit streams into groups including printed text (newspaper) signals which are transmitted in bit streams at a rate of 2.048 Megabits/sec. The main components of the ADC equipment are a rack for transmitting radio-broadcast programs in the form of digital bit streams, a rack for the reception of these signals, a rack for routing digital bit streams, and a section for the separation of the digital bit streams. Block diagrams and the principal technical characteristics of these components are presented.

  12. The design, fabrication, and test of a new VLSI hybrid analog-digital neural processing element

    NASA Technical Reports Server (NTRS)

    Deyong, Mark R.; Findley, Randall L.; Fields, Chris

    1992-01-01

    A hybrid analog-digital neural processing element with the time-dependent behavior of biological neurons has been developed. The hybrid processing element is designed for VLSI implementation and offers the best attributes of both analog and digital computation. Custom VLSI layout reduces the layout area of the processing element, which in turn increases the expected network density. The hybrid processing element operates at the nanosecond time scale, which enables it to produce real-time solutions to complex spatiotemporal problems found in high-speed signal processing applications. VLSI prototype chips have been designed, fabricated, and tested with encouraging results. Systems utilizing the time-dependent behavior of the hybrid processing element have been simulated and are currently in the fabrication process. Future applications are also discussed.

  13. Analog-digital conversion signal-to-noise ratio analysis for synthetic aperture interferometric radiometer

    NASA Astrophysics Data System (ADS)

    Zhang, Jin; Li, Zhiping; Zheng, Cheng; Yao, Xianxun; Yang, Baohua; Shang, Xiaozhou; Miao, Jungang

    2014-01-01

    A nontrivial analog-digital conversion (ADC) signal-to-noise ratio (SNR) analysis for synthetic aperture interferometric radiometers for microwave remote sensing is presented. Correlation uncertainty is a key issue in the digital processing of radiometric signals. The ADC digitizes the analog intermediate frequency signal to perform digital correlations, hence the ADC noise is critical for radiometric performance, but this effect has lacked sufficient analysis. First, the ADC SNR requirement is drawn, and ADC SNR degradation is attributed to input noise, quantization noise, and sampling jitter. Second, it is proved that the input and the quantization noise have negligible effects on visibility uncertainty. Third, it is shown that the sampling jitter should be stringently controlled by Gaussian noise digitization SNR requirement. The sampling clock jitter is the dominant contributor in jitter caused SNR, and is evaluated by the long-term statistical time interval error jitter. Finally, the sampling jitter, the realized ADC SNR ratio and visibility uncertainties are tested on BHU-2D-U radiometer to verify the demonstrations. The analysis results can be used as a guideline in the digital correlation design of polarimetric or synthetic aperture radiometric systems.

  14. An Analog-Digital Mixed Measurement Method of Inductive Proximity Sensor

    PubMed Central

    Guo, Yi-Xin; Shao, Zhi-Biao; Li, Ting

    2015-01-01

    Inductive proximity sensors (IPSs) are widely used in position detection given their unique advantages. To address the problem of temperature drift, this paper presents an analog-digital mixed measurement method based on the two-dimensional look-up table. The inductance and resistance components can be separated by processing the measurement data, thus reducing temperature drift and generating quantitative outputs. This study establishes and implements a two-dimensional look-up table that reduces the online computational complexity through structural modeling and by conducting an IPS operating principle analysis. This table is effectively compressed by considering the distribution characteristics of the sample data, thus simplifying the processing circuit. Moreover, power consumption is reduced. A real-time, built-in self-test (BIST) function is also designed and achieved by analyzing abnormal sample data. Experiment results show that the proposed method obtains the advantages of both analog and digital measurements, which are stable, reliable, and taken in real time, without the use of floating-point arithmetic and process-control-based components. The quantitative output of displacement measurement accelerates and stabilizes the system control and detection process. The method is particularly suitable for meeting the high-performance requirements of the aviation and aerospace fields. PMID:26729118

  15. Reentrant excitation in an analog-digital hybrid circuit model of cardiac tissue

    NASA Astrophysics Data System (ADS)

    Mahmud, Farhanahani; Shiozawa, Naruhiro; Makikawa, Masaaki; Nomura, Taishin

    2011-06-01

    We propose an analog-digital hybrid circuit model of one-dimensional cardiac tissue with hardware implementation that allows us to perform real-time simulations of spatially conducting cardiac action potentials. Each active nodal compartment of the tissue model is designed using analog circuits and a dsPIC microcontroller, by which the time-dependent and time-independent nonlinear current-voltage relationships of six types of ion channel currents employed in the Luo-Rudy phase I (LR-I) model for a single mammalian cardiac ventricular cell can be reproduced quantitatively. Here, we perform real-time simulations of reentrant excitation conduction in a ring-shaped tissue model that includes eighty nodal compartments. In particular, we show that the hybrid tissue model can exhibit real-time dynamics for initiation of reentries induced by uni-directional block, as well as those for phase resetting that leads to annihilation of the reentry in response to impulsive current stimulations at appropriate nodes and timings. The dynamics of the hybrid model are comparable to those of a spatially distributed tissue model with LR-I compartments. Thus, it is conceivable that the hybrid model might be a useful tool for large scale simulations of cardiac tissue dynamics, as an alternative to numerical simulations, leading toward further understanding of the reentrant mechanisms.

  16. A mixed analog/digital chaotic neuro-computer system for quadratic assignment problems.

    PubMed

    Horio, Yoshihiko; Ikeguchi, Tohru; Aihara, Kazuyuki

    2005-01-01

    We construct a mixed analog/digital chaotic neuro-computer prototype system for quadratic assignment problems (QAPs). The QAP is one of the difficult NP-hard problems, and includes several real-world applications. Chaotic neural networks have been used to solve combinatorial optimization problems through chaotic search dynamics, which efficiently searches optimal or near optimal solutions. However, preliminary experiments have shown that, although it obtained good feasible solutions, the Hopfield-type chaotic neuro-computer hardware system could not obtain the optimal solution of the QAP. Therefore, in the present study, we improve the system performance by adopting a solution construction method, which constructs a feasible solution using the analog internal state values of the chaotic neurons at each iteration. In order to include the construction method into our hardware, we install a multi-channel analog-to-digital conversion system to observe the internal states of the chaotic neurons. We show experimentally that a great improvement in the system performance over the original Hopfield-type chaotic neuro-computer is obtained. That is, we obtain the optimal solution for the size-10 QAP in less than 1000 iterations. In addition, we propose a guideline for parameter tuning of the chaotic neuro-computer system according to the observation of the internal states of several chaotic neurons in the network.

  17. An Analog-Digital Mixed Measurement Method of Inductive Proximity Sensor.

    PubMed

    Guo, Yi-Xin; Shao, Zhi-Biao; Li, Ting

    2015-12-30

    Inductive proximity sensors (IPSs) are widely used in position detection given their unique advantages. To address the problem of temperature drift, this paper presents an analog-digital mixed measurement method based on the two-dimensional look-up table. The inductance and resistance components can be separated by processing the measurement data, thus reducing temperature drift and generating quantitative outputs. This study establishes and implements a two-dimensional look-up table that reduces the online computational complexity through structural modeling and by conducting an IPS operating principle analysis. This table is effectively compressed by considering the distribution characteristics of the sample data, thus simplifying the processing circuit. Moreover, power consumption is reduced. A real-time, built-in self-test (BIST) function is also designed and achieved by analyzing abnormal sample data. Experiment results show that the proposed method obtains the advantages of both analog and digital measurements, which are stable, reliable, and taken in real time, without the use of floating-point arithmetic and process-control-based components. The quantitative output of displacement measurement accelerates and stabilizes the system control and detection process. The method is particularly suitable for meeting the high-performance requirements of the aviation and aerospace fields.

  18. Hybrid-integrated prism array optoelectronic targeting system

    NASA Astrophysics Data System (ADS)

    Chang, C. C.; Chang, H. C.; Tang, L. C.; Young, W. K.; Wang, J. C.; Huang, K. L.

    2005-11-01

    This investigation proposes a cost-effective, compact, and robust optoelectronic targeting system for measuring ballistic impact velocity and the distribution of projectile motion. The major elements of this system are four photo-gates hybridized by compound one-dimensional prism array and analog/digital electronic components. The number of light sources and photodetectors used in a photo-gate was reduced to one pair of light source and photodetector. The average velocity and location of the projectile are determined according to the measured time intervals ( ˜10 -8 s) passing each pair. The system can accurately measure the velocity of a bullet as it leaves a gun barrel, as well as the velocity at specific points along the trajectory outside the firearm. Additionally, the system uses a widespread low-powered laser pointer as a light source. Compared with other optoelectronic targeting systems that use high-powered lasers, the proposed system is both economical and safe.

  19. Nanowire Optoelectronics

    NASA Astrophysics Data System (ADS)

    Wang, Zhihuan; Nabet, Bahram

    2015-12-01

    Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes,"which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light inNWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

  20. Low-voltage and low-power circuit design for mixed analog/digital systems in portable equipment

    NASA Astrophysics Data System (ADS)

    Matsuzawa, Akira

    1994-04-01

    This paper describes low-voltage and low-power (LV/LP) circuit design for both analog LSI's and digital LSI's which are used in mixed analog/digital systems in portable equipment. We review some LV/LP circuits used in digital LSI's, such as general logic gate, DSP, and DRAM, and others used in analog LSI's, such as operational amplifiers, video-signal processing circuits, A/D and D/A converters, filters, and RF circuits, along with a wide range of items used in recently developed LSI's. Since analog circuits have fundamental difficulties for reducing the operating voltage and the power consumption, in spite of recent progress in LV/LP circuit techniques, these difficulties will be a major issue for decreasing the total power consumption of some mixed analog/digital systems used in portable equipment.

  1. Optoelectronic device

    DOEpatents

    Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

    2014-09-09

    The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

  2. The development and demonstration of hybrid programmable attitude control electronics. [with adaptable analog/digital design approach

    NASA Technical Reports Server (NTRS)

    Smith, L. S.; Kopf, E. H., Jr.

    1974-01-01

    HYPACE provides an adaptable, analog/digital design approach that permits preflight and in-flight accommodation of mission changes, component performance variations, spacecraft changes, etc., through programing. This enabled broad multimission flexibility of application in a cost-effective manner. The HYPACE design, which was demonstrated in breadboard form on a single-axis gas-bearing spacecraft simulation, uses a single control channel to perform the attitude control functions sequentially, thus significantly reducing the number of component parts over hard-wired designs. The success of this effort resulted in the concept being selected for the Mariner/Jupiter/Saturn 1977 spacecraft application.

  3. Design and evaluation of a low-level RF control system analog/digital receiver for the ILC main Linacs

    SciTech Connect

    Mavric, Uros; Vidmar, Matjaz; Chase, Brian; /Fermilab

    2008-06-01

    The proposed RF distribution scheme for the two 15 km long ILC LINACs, uses one klystron to feed 26 superconducting RF cavities operating at 1.3 GHz. For a precise control of the vector sum of the signals coming from the SC cavities, the control system needs a high performance, low cost, reliable and modular multichannel receiver. At Fermilab we developed a 96 channel, 1.3 GHz analog/digital receiver for the ILC LINAC LLRF control system. In the paper we present a balanced design approach to the specifications of each receiver section, the design choices made to fulfill the goals and a description of the prototyped system. The design is tested by measuring standard performance parameters, such as noise figure, linearity and temperature sensitivity. Measurements show that the design meets the specifications and it is comparable to other similar systems developed at other laboratories, in terms of performance.

  4. Detecting target velocity and location using a novel optoelectronic sensing system

    NASA Astrophysics Data System (ADS)

    Chang, Chi Ching

    2004-12-01

    We propose a cost-effective, compact, and robust optoelectronic sensing system for measuring ballistic impact velocity and distribution of the projectile motion. The key elements consisted of this system are four photo-gates hybridized by compound one-dimensional prism array and analog/digital electronic components. The number of light sources and photodetectors used in a photo-gate was reduced to one pair of that. The time interval passing each pair can be measured precisely (~10-8 s). The average velocity and location of projectile are carried out according the measured time intervals. The system can precisely measure the velocity of a bullet as it leaves a gun barrel and the velocity toward the trajectory outside the firearm. Furthermore, the system uses a commonly found low-powered laser pointer as light source. Compared with other optoelectronic sensing systems that use high-powered lasers, our system is both economical and safe.

  5. Modulation transfer function evaluation of cone beam computed tomography for dental use with the oversampling method

    PubMed Central

    Watanabe, H; Honda, E; Kurabayashi, T

    2010-01-01

    Objectives The aim was to investigate the possibility of evaluating the modulation transfer function (MTF) of cone beam CT (CBCT) for dental use using the oversampling method. Methods The CBCT apparatus (3D Accuitomo) with an image intensifier was used with a 100 μm tungsten wire placed inside the scanner at a slight angle to the plane perpendicular to the plane of interest and scanned. 200 contiguous reconstructed images were used to obtain the oversampling line-spread function (LSF). The MTF curve was obtained by computing the Fourier transformation from the oversampled LSF. Line pair tests were also performed using Catphan®. Results The oversampling method provided smooth and reproducible MTF curves. The MTF curves revealed that the spatial resolution in the z-axis direction was significantly higher than that in the axial direction. This result was also confirmed by the line pair test. Conclusions MTF analysis was performed successfully using the oversampling method. In addition, this study clarified that the 3D Accuitomo had high spatial resolution, especially in the z-axis direction. PMID:20089741

  6. Experimental Optoelectronic Associative Memory

    NASA Technical Reports Server (NTRS)

    Chao, Tien-Hsin

    1992-01-01

    Optoelectronic associative memory responds to input image by displaying one of M remembered images. Which image to display determined by optoelectronic analog computation of resemblance between input image and each remembered image. Does not rely on precomputation and storage of outer-product synapse matrix. Size of memory needed to store and process images reduced.

  7. [The primary research and development of software oversampling mapping system for electrocardiogram].

    PubMed

    Zhou, Yu; Ren, Jie

    2011-04-01

    We put forward a new concept of software oversampling mapping system for electrocardiogram (ECG) to assist the research of the ECG inverse problem to improve the generality of mapping system and the quality of mapping signals. We then developed a conceptual system based on the traditional ECG detecting circuit, Labview and DAQ card produced by National Instruments, and at the same time combined the newly-developed oversampling method into the system. The results indicated that the system could map ECG signals accurately and the quality of the signals was good. The improvement of hardware and enhancement of software made the system suitable for mapping in different situations. So the primary development of the software for oversampling mapping system was successful and further research and development can make the system a powerful tool for researching ECG inverse problem.

  8. Close-Packed Silicon Microelectrodes for Scalable Spatially Oversampled Neural Recording

    PubMed Central

    Scholvin, Jörg; Kinney, Justin P.; Bernstein, Jacob G.; Moore-Kochlacs, Caroline; Kopell, Nancy; Fonstad, Clifton G.; Boyden, Edward S.

    2015-01-01

    Objective Neural recording electrodes are important tools for understanding neural codes and brain dynamics. Neural electrodes that are close-packed, such as in tetrodes, enable spatial oversampling of neural activity, which facilitates data analysis. Here we present the design and implementation of close-packed silicon microelectrodes, to enable spatially oversampled recording of neural activity in a scalable fashion. Methods Our probes are fabricated in a hybrid lithography process, resulting in a dense array of recording sites connected to submicron dimension wiring. Results We demonstrate an implementation of a probe comprising 1000 electrode pads, each 9 × 9 μm, at a pitch of 11 μm. We introduce design automation and packaging methods that allow us to readily create a large variety of different designs. Significance Finally, we perform neural recordings with such probes in the live mammalian brain that illustrate the spatial oversampling potential of closely packed electrode sites. PMID:26699649

  9. Photonic analog-to-digital converter via asynchronous oversampling

    NASA Astrophysics Data System (ADS)

    Carver, Spencer; Reeves, Erin; Siahmakoun, Azad; Granieri, Sergio

    2012-06-01

    This paper presents a hybrid opto-electronic asynchronous delta-sigma modulator, implemented in the form of a fiber-optic Analog-to-Digital converter (ADC). This architecture was chosen for its independence of an external clock and ease of demodulation through a single low-pass filter stage. The fiber-optic prototype consists of an input laser (wavelength λ1) which is modulated with an input RF signal, a high-speed comparator circuit working as bi-stable quantizer, and a fiber-optic loop that includes a SOA and a band-pass filter that act as a leaky integrator. The fiber-optic loop acts as a fiber-ring resonator (FRR), and defines the resonance wavelength λ2 of the system. The gain within this loop is modified through cross-gain modulation (XGM) by the input wavelength λ1, and thus achieves the desired modulation effect. The proposed architecture has been constructed and characterized at a sampling rate of 15.4 MS/s processing input analog signals in the range of dc-3 MHz with a signal-to-noise ratio of 36 dB and an effective number of bits of 5.7.

  10. A hybrid analog-digital phase-locked loop for frequency mode non-contact scanning probe microscopy.

    PubMed

    Mehta, M M; Chandrasekhar, V

    2014-01-01

    Non-contact scanning probe microscopy (SPM) has developed into a powerful technique to image many different properties of samples. The conventional method involves monitoring the amplitude, phase, or frequency of a cantilever oscillating at or near its resonant frequency as it is scanned across the surface of a sample. For high Q factor cantilevers, monitoring the resonant frequency is the preferred method in order to obtain reasonable scan times. This can be done by using a phase-locked-loop (PLL). PLLs can be obtained as commercial integrated circuits, but these do not have the frequency resolution required for SPM. To increase the resolution, all-digital PLLs requiring sophisticated digital signal processors or field programmable gate arrays have also been implemented. We describe here a hybrid analog/digital PLL where most of the components are implemented using discrete analog integrated circuits, but the frequency resolution is provided by a direct digital synthesis chip controlled by a simple peripheral interface controller (PIC) microcontroller. The PLL has excellent frequency resolution and noise, and can be controlled and read by a computer via a universal serial bus connection.

  11. Synchronization sampling method based on delta-sigma analog-digital converter for underwater towed array system

    NASA Astrophysics Data System (ADS)

    Jiang, Jia-Jia; Duan, Fa-Jie; Li, Yan-Chao; Hua, Xiang-Ning

    2014-03-01

    Synchronization sampling is very important in underwater towed array system where every acquisition node (AN) samples analog signals by its own analog-digital converter (ADC). In this paper, a simple and effective synchronization sampling method is proposed to ensure synchronized operation among different ANs of the underwater towed array system. We first present a master-slave synchronization sampling model, and then design a high accuracy phase-locked loop to synchronize all delta-sigma ADCs to a reference clock. However, when the master-slave synchronization sampling model is used, both the time-delay (TD) of messages traveling along the wired transmission medium and the jitter of the clocks will bring out synchronization sampling error (SSE). Therefore, a simple method is proposed to estimate and compensate the TD of the messages transmission, and then another effective method is presented to overcome the SSE caused by the jitter of the clocks. An experimental system with three ANs is set up, and the related experimental results verify the validity of the synchronization sampling method proposed in this paper.

  12. Synchronization sampling method based on delta-sigma analog-digital converter for underwater towed array system.

    PubMed

    Jiang, Jia-Jia; Duan, Fa-Jie; Li, Yan-Chao; Hua, Xiang-Ning

    2014-03-01

    Synchronization sampling is very important in underwater towed array system where every acquisition node (AN) samples analog signals by its own analog-digital converter (ADC). In this paper, a simple and effective synchronization sampling method is proposed to ensure synchronized operation among different ANs of the underwater towed array system. We first present a master-slave synchronization sampling model, and then design a high accuracy phase-locked loop to synchronize all delta-sigma ADCs to a reference clock. However, when the master-slave synchronization sampling model is used, both the time-delay (TD) of messages traveling along the wired transmission medium and the jitter of the clocks will bring out synchronization sampling error (SSE). Therefore, a simple method is proposed to estimate and compensate the TD of the messages transmission, and then another effective method is presented to overcome the SSE caused by the jitter of the clocks. An experimental system with three ANs is set up, and the related experimental results verify the validity of the synchronization sampling method proposed in this paper.

  13. A photonic analog-to-digital converter using phase modulation and self-coherent detection with spatial oversampling.

    PubMed

    Golani, Ori; Mauri, Luca; Pasinato, Fabiano; Cattaneo, Cristian; Consonnni, Guido; Balsamo, Stefano; Marom, Dan M

    2014-05-19

    We propose a new type of photonic analog-to-digital converter (ADC), designed for high-resolution (>7 bit) and high sampling rates (scalable to tens of GS/s). It is based on encoding the input analog voltage signal onto the phase of an optical pulse stream originating from a mode-locked laser, and uses spatial oversampling as a means to improve the conversion resolution. This paper describes the concept of spatial oversampling and draws its similarities to the commonly used temporal oversampling. The design and fabrication of a LiNbO(3)/silica hybrid photonic integrated circuit for implementing the spatial oversampling is shown, and its abilities are demonstrated experimentally by digitizing gigahertz signals (frequencies up to 18GHz) at an undersampled rate of 2.56GS/s with a conversion resolution of up to 7.6 effective bits. Oversampling factors of 1-4 are demonstrated.

  14. Multiplexed Oversampling Digitizer in 65 nm CMOS for Column-Parallel CCD Readout

    SciTech Connect

    Grace, Carl; Walder, Jean-Pierre; von der Lippe, Henrik

    2012-04-10

    A digitizer designed to read out column-parallel charge-coupled devices (CCDs) used for high-speed X-ray imaging is presented. The digitizer is included as part of the High-Speed Image Preprocessor with Oversampling (HIPPO) integrated circuit. The digitizer module comprises a multiplexed, oversampling, 12-bit, 80 MS/s pipelined Analog-to-Digital Converter (ADC) and a bank of four fast-settling sample-and-hold amplifiers to instrument four analog channels. The ADC multiplexes and oversamples to reduce its area to allow integration that is pitch-matched to the columns of the CCD. Novel design techniques are used to enable oversampling and multiplexing with a reduced power penalty. The ADC exhibits 188 ?V-rms noise which is less than 1 LSB at a 12-bit level. The prototype is implemented in a commercially available 65 nm CMOS process. The digitizer will lead to a proof-of-principle 2D 10 Gigapixel/s X-ray detector.

  15. Optoelectronic Mounting Structure

    DOEpatents

    Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

    2004-10-05

    An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

  16. Discussion of optoelectronic HMDASS

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Liu, Xu; Yang, Yi; Sun, Longhe; Liu, Hua

    2000-10-01

    The use of opto-electronic Helmet Mounted Display And Sight System (HMDASS) will decrease responding time for fighter in near distance tussle. See-through type Helmet Mounted Display (HMD), instead of the simple graduation board display, will provide more information and so much as integrate the FLTR image. We research some questions of TFTLCD device in optic- electric HMDASS application, such as luminance, information content & format etc. This paper discuss the luminance question in perspective type LCD-HMD and put forward a display method to increase the reaction velocity for a pilot using opto-electronic Helmet Mounted Sight (HMS).

  17. Employment of sawtooth-shaped-function excitation signal and oversampling for improving resistance measurement accuracy

    NASA Astrophysics Data System (ADS)

    Lin, Ling; Li, Shujuan; Yan, Wenjuan; Li, Gang

    2016-10-01

    In order to achieve higher measurement accuracy of routine resistance without increasing the complexity and cost of the system circuit of existing methods, this paper presents a novel method that exploits a shaped-function excitation signal and oversampling technology. The excitation signal source for resistance measurement is modulated by the sawtooth-shaped-function signal, and oversampling technology is employed to increase the resolution and the accuracy of the measurement system. Compared with the traditional method of using constant amplitude excitation signal, this method can effectively enhance the measuring accuracy by almost one order of magnitude and reduce the root mean square error by 3.75 times under the same measurement conditions. The results of experiments show that the novel method can attain the aim of significantly improve the measurement accuracy of resistance on the premise of not increasing the system cost and complexity of the circuit, which is significantly valuable for applying in electronic instruments.

  18. Optoelectronic techniques for broadband switching

    NASA Astrophysics Data System (ADS)

    Su, S. F.; Jou, L.; Lenart, J.

    1988-01-01

    Optoelectronic switching employs a hybrid optical/electronic principle to perform the switching function and is applicable for either analog broadband or high-bit rate digital switching. The major advantages of optoelectronic switching include high isolation, low crosstalk, small physical size, light weight, and low power consumption. These advantages make optoelectronic switching an excellent candidate for on-board satellite switching. This paper describes a number of optoelectronic switching architectures. System components required for implementing these switching architectures are discussed. Performance of these architectures are evaluated by calculating their crosstalk, isolation, insertion loss, matrix size, drive power, throughput, and switching speed. Technologies needed for monolithic optoelectronic switching are also identified.

  19. Picosecond optoelectronic devices

    SciTech Connect

    Lee, C.L.

    1984-01-01

    Ever since the invention of picosecond lasers, scientists and electronic engineers have been dreaming of inventing electronic devices that can record in real time the physical and electronic events that take place on picosecond time scales. With the exception of the expensive streak camera, this dream has been largely unfullfilled. Today, a real-time oscilloscope with picosecond time resolution is still not available. To fill the need for even better time resolution, researchers have turned to optical pulses and thus a hybrid technology has emerged-picosecond optoelectronics. This technology, based on bulk photoconductors, has had a slow start. However, because of the simplicity, scaleability, and jitterfree nature of the devices, the technology has recently experienced a rapid growth. This volume reviews the major developments in the field of picosecond optoelectronics over the past decade.

  20. Complexation of Optoelectronic Systems

    NASA Astrophysics Data System (ADS)

    Boreisho, A. S.; Il‧in, M. Yu.; Konyaev, M. A.; Mikhailenko, A. S.; Morozov, A. V.; Strakhov, S. Yu.

    2016-05-01

    Problems of increasing the efficiency and the functionality of complex optoelectronic systems for monitoring real atmospheric conditions and of their use are discussed. It is shown by the example of a meteorological complex comprising an infrared wind-sensing lidar and an X-range Doppler radar that the complexation of probing systems working in different electromagnetic-radiation ranges opens up new opportunities for determining the meteorological parameters of a turbulent atmosphere and investigating the interaction of radiation with it.

  1. Monolithic Optoelectronic Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Walters, Wayne; Gustafsen, Jerry; Bendett, Mark

    1990-01-01

    Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.

  2. Adaptive Optoelectronic Eyes: Hybrid Sensor/Processor Architectures

    DTIC Science & Technology

    2006-11-13

    physiology of vision, neurobiology, computational neuroscience, neural networks, the development and modeling of vision algorithms, VLSI device design...Hybrid Analog /Digital VLSI Design; Cellular Neural Network Designs; VLSI Chip Testing and Analysis; Active Pixel CMOS Sensor Arrays Prof. John O’Brien...representation analog /digital VLSI technology. In addition, the development of this integrated hybrid packaging technology has potential for a wide range

  3. An automated lung nodule detection system for CT images using synthetic minority oversampling

    NASA Astrophysics Data System (ADS)

    Mehre, Shrikant A.; Mukhopadhyay, Sudipta; Dutta, Anirvan; Harsha, Nagam Chaithan; Dhara, Ashis Kumar; Khandelwal, Niranjan

    2016-03-01

    Pulmonary nodules are a potential manifestation of lung cancer, and their early detection can remarkably enhance the survival rate of patients. This paper presents an automated pulmonary nodule detection algorithm for lung CT images. The algorithm utilizes a two-stage approach comprising nodule candidate detection followed by reduction of false positives. The nodule candidate detection involves thresholding, followed by morphological opening. The geometrical features at this stage are selected from properties of nodule size and compactness, and lead to reduced number of false positives. An SVM classifier is used with a radial basis function kernel. The data imbalance, due to uneven distribution of nodules and non-nodules as a result of the candidate detection stage, is proposed to be addressed by oversampling of minority class using Synthetic Minority Over-sampling Technique (SMOTE), and over-imposition of its misclassification penalty. Experiments were performed on 97 CT scans of a publically-available (LIDC-IDRI) database. Performance is evaluated in terms of sensitivity and false positives per scan (FP/scan). Results indicate noteworthy performance of the proposed approach (nodule detection sensitivity after 4-fold cross-validation is 92.91% with 3 FP/scan). Comparative analysis also reflects a comparable and often better performance of the proposed setup over some of the existing techniques.

  4. Optoelectronic technology consortium

    NASA Astrophysics Data System (ADS)

    Hibbs-Brenner, Mary

    1992-12-01

    The Optoelectronics Technology Consortium has been established to position U.S. industry as the world leader in optical interconnect technology by developing, fabricating, intergrating and demonstrating the producibility of optoelectronic components for high-density/high-data-rate processors and accelerating the insertion of this technology into military and commercial applications. This objective will be accomplished by a program focused in three areas. (1) Demonstrated performance: OETC will demonstrate an aggregate data transfer rate of 16 Gbit/s between single transmitter and receiver packages, as well as the expandability of this technology by combing four links in parallel to achieve a 64 Gbit/s link. (2) Accelerated development: By collaborating during precompetitive technology development stage, OTEC will advance the development of optical components and produce links for a multiboard processor testbed demonstration; and (3) Producibility: OETC's technology will achieve this performance by using components that are affordable, and reliable, with a line BER less than 10(exp -15) and MTTF greater than 10(exp 6) hours.

  5. Integrated terahertz optoelectronics

    NASA Astrophysics Data System (ADS)

    Liang, Guozhen; Wang, Qi Jie

    2016-11-01

    Currently, terahertz (THz) optical systems are based on bulky free-space optics. This is due to the lack of a common platform onto which different THz components, e.g., source, waveguide, modulator and detector, can be monolithically integrated. With the development of THz quantum cascade laser (QCL), it has been realized that the QCL chip may be such a platform for integrated THz photonics. Here, we report our recent works where the THz QCL is integrated with passive or optoelectronic components. They are: 1) integrated graphene modulator with THz QCL achieving 100% modulation depth and fast speed; 2) phase-locked THz QCL with integrated plasmonic waveguide and subwavelength antennas realizing dynamically widely tunable polarizations.

  6. Optoelectronic Reservoir Computing

    PubMed Central

    Paquot, Y.; Duport, F.; Smerieri, A.; Dambre, J.; Schrauwen, B.; Haelterman, M.; Massar, S.

    2012-01-01

    Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an optoelectronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations. PMID:22371825

  7. Materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John; Smigelski, Jr., Paul Michael

    2015-01-27

    Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

  8. THE SYNTHETIC-OVERSAMPLING METHOD: USING PHOTOMETRIC COLORS TO DISCOVER EXTREMELY METAL-POOR STARS

    SciTech Connect

    Miller, A. A.

    2015-09-20

    Extremely metal-poor (EMP) stars ([Fe/H] ≤ −3.0 dex) provide a unique window into understanding the first generation of stars and early chemical enrichment of the universe. EMP stars are exceptionally rare, however, and the relatively small number of confirmed discoveries limits our ability to exploit these near-field probes of the first ∼500 Myr after the Big Bang. Here, a new method to photometrically estimate [Fe/H] from only broadband photometric colors is presented. I show that the method, which utilizes machine-learning algorithms and a training set of ∼170,000 stars with spectroscopically measured [Fe/H], produces a typical scatter of ∼0.29 dex. This performance is similar to what is achievable via low-resolution spectroscopy, and outperforms other photometric techniques, while also being more general. I further show that a slight alteration to the model, wherein synthetic EMP stars are added to the training set, yields the robust identification of EMP candidates. In particular, this synthetic-oversampling method recovers ∼20% of the EMP stars in the training set, at a precision of ∼0.05. Furthermore, ∼65% of the false positives from the model are very metal-poor stars ([Fe/H] ≤ −2.0 dex). The synthetic-oversampling method is biased toward the discovery of warm (∼F-type) stars, a consequence of the targeting bias from the Sloan Digital Sky Survey/Sloan Extension for Galactic Understanding survey. This EMP selection method represents a significant improvement over alternative broadband optical selection techniques. The models are applied to >12 million stars, with an expected yield of ∼600 new EMP stars, which promises to open new avenues for exploring the early universe.

  9. Restricted Boltzmann machines based oversampling and semi-supervised learning for false positive reduction in breast CAD.

    PubMed

    Cao, Peng; Liu, Xiaoli; Bao, Hang; Yang, Jinzhu; Zhao, Dazhe

    2015-01-01

    The false-positive reduction (FPR) is a crucial step in the computer aided detection system for the breast. The issues of imbalanced data distribution and the limitation of labeled samples complicate the classification procedure. To overcome these challenges, we propose oversampling and semi-supervised learning methods based on the restricted Boltzmann machines (RBMs) to solve the classification of imbalanced data with a few labeled samples. To evaluate the proposed method, we conducted a comprehensive performance study and compared its results with the commonly used techniques. Experiments on benchmark dataset of DDSM demonstrate the effectiveness of the RBMs based oversampling and semi-supervised learning method in terms of geometric mean (G-mean) for false positive reduction in Breast CAD.

  10. Anthropogenic emissions of highly reactive volatile organic compounds inferred from oversampling of OMI HCHO columns

    NASA Astrophysics Data System (ADS)

    Zhu, L.; Jacob, D. J.; Mickley, L. J.; Marais, E. A.; Cohan, D. S.; Yoshida, Y.; Duncan, B. N.; Gonzalez Abad, G.; Chance, K.

    2014-12-01

    Satellite observations of formaldehyde (HCHO) columns provide top-down constraints on emissions of highly reactive volatile organic compounds (HRVOCs). This approach has been used previously to constrain emissions of isoprene from vegetation, but application to US anthropogenic emissions has been stymied by lack of a discernable HCHO signal. Here we show that oversampling of HCHO data from the Ozone Monitoring Instrument (OMI) for 2005-2008 enables quantitative detection of urban and industrial plumes in eastern Texas including Houston, Port Arthur, and Dallas/Fort Worth. By spatially integrating the individual urban/industrial HCHO plumes observed by OMI we can constrain the corresponding HCHO-weighted HRVOC emissions. Application to the Houston plume indicates a HCHO source of 260±110 kmol h-1 and implies a factor of 5.5±2.4 underestimate of anthropogenic HRVOC emissions in the US Environmental Protection Agency inventory. This approach allows us to monitor trends in HRVOC emissions over the US, in particular from the urban areas and oil/gas industry.

  11. Compact FPGA-based beamformer using oversampled 1-bit A/D converters.

    PubMed

    Tomov, Borislav Gueorguiev; Jensen, Jørgen Arendt

    2005-05-01

    A compact medical ultrasound beamformer architecture that uses oversampled 1-bit analog-to-digital (A/D) converters is presented. Sparse sample processing is used, as the echo signal for the image lines is reconstructed in 512 equidistant focal points along the line through its in-phase and quadrature components. That information is sufficient for presenting a B-mode image and creating a color flow map. The high sampling rate provides the necessary delay resolution for the focusing. The low channel data width (1-bit) makes it possible to construct a compact beamformer logic. The signal reconstruction is done using finite impulse reponse (FIR) filters, applied on selected bit sequences of the delta-sigma modulator output stream. The approach allows for a multichannel beamformer to fit in a single field programmable gate array (FPGA) device. A 32-channel beamformer is estimated to occupy 50% of the available logic resources in a commercially available mid-range FPGA, and to be able to operate at 129 MHz. Simulation of the architecture at 140 MHz provides images with a dynamic range approaching 60 dB for an excitation frequency of 3 MHz.

  12. Anthropogenic Emissions of Highly Reactive Volatile Organic Compounds (HRVOCs) Inferred from Oversampling of OMI HCHO Columns

    NASA Technical Reports Server (NTRS)

    Zhu, Lei; Jacob, Daniel; Mickley, Loretta; Marais, Eloise; Zhang, Aoxing; Cohan, Daniel; Yoshida, Yasuko; Duncan, Bryan; Abad, Gonzalo Gonzalez; Chance, Kelly; DeSmedt, Isabelle

    2014-01-01

    Satellite observations of formaldehyde (HCHO) columns provide top-down constraints on emissions of highly reactive volatile organic compounds (HRVOCs). This approach has been used previously to constrain emissions of isoprene from vegetation, but application to US anthropogenic emissions has been stymied by lack of a discernable HCHO signal. Here we show that oversampling of HCHO data from the Ozone Monitoring Instrument (OMI) for 2005 - 2008 enables quantitative detection of urban and industrial plumes in eastern Texas including Houston, Port Arthur, and Dallas-Fort Worth. By spatially integrating the individual urban-industrial HCHO plumes observed by OMI we can constrain the corresponding HCHO-weighted HRVOC emissions. Application to the Houston plume indicates a HCHO source of 260 plus or minus 110 kmol h-1 and implies a factor of 5.5 plus or minus 2.4 underestimate of anthropogenic HRVOC emissions in the US Environmental Protection Agency inventory. With this approach we are able to monitor the trend in HRVOC emissions over the US, in particular from the oil-gas industry, over the past decade.

  13. Optoelectronics with Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Kinoshita, Megumi

    2011-12-01

    purified tubes aligned in parallel. While the operating principle is somewhat different from that of single-tube diodes because of the presence of metallic tubes in the material, the film diodes nonetheless show a rectifying behavior and much greater light intensity than single-tube devices. With their superior light output and robustness, they bring us one step closer to a real-world application of carbon nanotubes optoelectronics.

  14. A PWM Buck Converter With Load-Adaptive Power Transistor Scaling Scheme Using Analog-Digital Hybrid Control for High Energy Efficiency in Implantable Biomedical Systems.

    PubMed

    Park, Sung-Yun; Cho, Jihyun; Lee, Kyuseok; Yoon, Euisik

    2015-12-01

    We report a pulse width modulation (PWM) buck converter that is able to achieve a power conversion efficiency (PCE) of > 80% in light loads 100 μA) for implantable biomedical systems. In order to achieve a high PCE for the given light loads, the buck converter adaptively reconfigures the size of power PMOS and NMOS transistors and their gate drivers in accordance with load currents, while operating at a fixed frequency of 1 MHz. The buck converter employs the analog-digital hybrid control scheme for coarse/fine adjustment of power transistors. The coarse digital control generates an approximate duty cycle necessary for driving a given load and selects an appropriate width of power transistors to minimize redundant power dissipation. The fine analog control provides the final tuning of the duty cycle to compensate for the error from the coarse digital control. The mode switching between the analog and digital controls is accomplished by a mode arbiter which estimates the average of duty cycles for the given load condition from limit cycle oscillations (LCO) induced by coarse adjustment. The fabricated buck converter achieved a peak efficiency of 86.3% at 1.4 mA and > 80% efficiency for a wide range of load conditions from 45 μA to 4.1 mA, while generating 1 V output from 2.5-3.3 V supply. The converter occupies 0.375 mm(2) in 0.18 μm CMOS processes and requires two external components: 1.2 μF capacitor and 6.8 μH inductor.

  15. Coupled opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Yao, X. Steve (Inventor); Maleki, Lute (Inventor)

    1999-01-01

    A coupled opto-electronic oscillator that directly couples a laser oscillation with an electronic oscillation to simultaneously achieve a stable RF oscillation at a high frequency and ultra-short optical pulsation by mode locking with a high repetition rate and stability. Single-mode selection can be achieved even with a very long opto-electronic loop. A multimode laser can be used to pump the electronic oscillation, resulting in a high operation efficiency. The optical and the RF oscillations are correlated to each other.

  16. Simple Optoelectronic Feedback in Microwave Oscillators

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Iltchenko, Vladimir

    2009-01-01

    A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.

  17. Oversampling smoothness: an effective algorithm for phase retrieval of noisy diffraction intensities.

    PubMed

    Rodriguez, Jose A; Xu, Rui; Chen, Chien-Chun; Zou, Yunfei; Miao, Jianwei

    2013-04-01

    Coherent diffraction imaging (CDI) is high-resolution lensless microscopy that has been applied to image a wide range of specimens using synchrotron radiation, X-ray free-electron lasers, high harmonic generation, soft X-ray lasers and electrons. Despite recent rapid advances, it remains a challenge to reconstruct fine features in weakly scattering objects such as biological specimens from noisy data. Here an effective iterative algorithm, termed oversampling smoothness (OSS), for phase retrieval of noisy diffraction intensities is presented. OSS exploits the correlation information among the pixels or voxels in the region outside of a support in real space. By properly applying spatial frequency filters to the pixels or voxels outside the support at different stages of the iterative process (i.e. a smoothness constraint), OSS finds a balance between the hybrid input-output (HIO) and error reduction (ER) algorithms to search for a global minimum in solution space, while reducing the oscillations in the reconstruction. Both numerical simulations with Poisson noise and experimental data from a biological cell indicate that OSS consistently outperforms the HIO, ER-HIO and noise robust (NR)-HIO algorithms at all noise levels in terms of accuracy and consistency of the reconstructions. It is expected that OSS will find application in the rapidly growing CDI field, as well as other disciplines where phase retrieval from noisy Fourier magnitudes is needed. The MATLAB (The MathWorks Inc., Natick, MA, USA) source code of the OSS algorithm is freely available from http://www.physics.ucla.edu/research/imaging.

  18. Regularization of Mars Reconnaissance Orbiter CRISM along-track oversampled hyperspectral imaging observations of Mars

    NASA Astrophysics Data System (ADS)

    Kreisch, C. D.; O'Sullivan, J. A.; Arvidson, R. E.; Politte, D. V.; He, L.; Stein, N. T.; Finkel, J.; Guinness, E. A.; Wolff, M. J.; Lapôtre, M. G. A.

    2017-01-01

    Mars Reconnaissance Orbiter Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) hyperspectral image data have been acquired in an along-track oversampled (ATO) mode with the intent of processing the data to better than the nominal ∼18 m/pixel ground resolution. We have implemented an iterative maximum log-likelihood method (MLM) that utilizes the instrument spectral and spatial transfer functions and includes a penalty function to regularize the data. Products are produced both in sensor space and as projected hyperspectral image cubes at 12 m/pixel. Preprocessing steps include retrieval of surface single scattering albedos (SSA) using the Hapke Function and DISORT-based radiative modeling of atmospheric gases and aerosols. Resultant SSA cubes are despiked to remove extrema and tested to ensure that the remaining data are Poisson-distributed, an underlying assumption for the MLM algorithm implementation. Two examples of processed ATO data sets are presented. ATO0002EC79 covers the route taken by the Curiosity rover during its initial ascent of Mount Sharp in Gale Crater. SSA data are used to model mineral abundances and grain sizes predicted to be present in the Namib barchan sand dune sampled and analyzed by Curiosity. CRISM based results compare favorably to in situ results derived from Curiosity's measurement campaign. ATO0002DDF9 covers Marathon Valley on the Cape Tribulation rim segment of Endeavour Crater. SSA spectra indicate the presence of a minor component of Fe3+ and Mg2+ smectites on the valley floor and walls. Localization to 12 m/pixel provided the detailed spatial information needed for the Opportunity rover to traverse to and characterize those outcrops that have the deepest absorptions. The combination of orbital and rover-based data show that the smectite-bearing outcrops in Marathon Valley are impact breccias that are basaltic in composition and that have been isochemically altered in a low water to rock environment.

  19. Spatial over-sampling and its influence on spatial resolution for photoacoustic tomography with finite sized detectors

    NASA Astrophysics Data System (ADS)

    Burgholzer, P.; Roitner, H.; Berer, T.; Grün, H.; Nuster, R.; Paltauf, G.; Haltmeier, M.

    2014-03-01

    Detector arrays enable parallel detection for faster photoacoustic imaging than by moving a single detector, but the detector spacing for arrays cannot be smaller than the size of an array element. Spatial over-sampling is scanning with a step-size smaller than the size of the detector element and is possible only for a moving single detector. For a detector with finite sized surface the measured acoustic signal is a spatial average of the pressure field over the detector surface. If the reconstruction is performed assuming point-like detection over-sampling brings no advantage as e.g. for spherical or cylindrical detection surfaces the blurring caused by a finite detector size is proportional to the distance from the rotation center and is equal to the detector size at the detection surface. Iterative reconstruction algorithms or inverting directly the imaging matrix can take the finite size of real detectors directly into account, but the numerical effort is significantly higher compared to direct algorithms assuming point-like detection. Another reconstruction with less numerical effort is to use a direct algorithm assuming point-like detectors and run a deconvolution algorithm for deblurring afterwards. For such reconstruction methods spatial over-sampling makes sense because it reduces the blurring significantly. The effect of step size on the reconstructed image is systematically examined using simulated and experimental data. Experimental data are obtained on a plastisol cylinder with thin holes filled with an absorbing liquid. Data acquisition is done by utilization of a piezoelectric detector (PVDF stripe) which is rotated around the plastisol cylinder.

  20. III-Nitride nanowire optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian

    2015-11-01

    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  1. Optoelectronic Apparatus Measures Glucose Noninvasively

    NASA Technical Reports Server (NTRS)

    Ansari, Rafat R.; Rovati, Luigi L.

    2003-01-01

    An optoelectronic apparatus has been invented as a noninvasive means of measuring the concentration of glucose in the human body. The apparatus performs polarimetric and interferometric measurements of the human eye to acquire data from which the concentration of glucose in the aqueous humor can be computed. Because of the importance of the concentration of glucose in human health, there could be a large potential market for instruments based on this apparatus.

  2. Optoelectronic assistance for the disabled

    NASA Astrophysics Data System (ADS)

    Minor, Arturo; Almazan, Salvador; Suaste, Ernesto

    1994-06-01

    We show an optoelectronic implementation assistant that will be used by handicapped people. The system works with the head gesture movements of the user. These movements are vectorized with an IR spotlight that is detected by four optocoupled detectors. The information is interpreted and sent to the PC by the serial port. This implementation could be used as a powerful tool between man-machine interaction.

  3. Opto-electronic morphological processor

    NASA Technical Reports Server (NTRS)

    Yu, Jeffrey W. (Inventor); Chao, Tien-Hsin (Inventor); Cheng, Li J. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    The opto-electronic morphological processor of the present invention is capable of receiving optical inputs and emitting optical outputs. The use of optics allows implementation of parallel input/output, thereby overcoming a major bottleneck in prior art image processing systems. The processor consists of three components, namely, detectors, morphological operators and modulators. The detectors and operators are fabricated on a silicon VLSI chip and implement the optical input and morphological operations. A layer of ferro-electric liquid crystals is integrated with a silicon chip to provide the optical modulation. The implementation of the image processing operators in electronics leads to a wide range of applications and the use of optical connections allows cascadability of these parallel opto-electronic image processing components and high speed operation. Such an opto-electronic morphological processor may be used as the pre-processing stage in an image recognition system. In one example disclosed herein, the optical input/optical output morphological processor of the invention is interfaced with a binary phase-only correlator to produce an image recognition system.

  4. Nanofabrication of Hybrid Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Dibos, Alan Michael

    The material requirements for optoelectronic devices can vary dramatically depending on the application. Often disparate material systems need to be combined to allow for full device functionality. At the nanometer scale, this can often be challenging because of the inherent chemical and structural incompatibilities of nanofabrication. This dissertation concerns the integration of seemingly dissimilar materials into hybrid optoelectronic devices for photovoltaic, plasmonic, and photonic applications. First, we show that combining a single strip of conjugated polymer and inorganic nanowire can yield a nanoscale solar cell, and modeling of optical absorption and exciton diffusion in this device can provide insight into the efficiency of charge separation. Second, we use an on-chip nanowire light emitting diode to pump a colloidal quantum dot coupled to a silver waveguide. The resulting device is an electro-optic single plasmon source. Finally, we transfer diamond waveguides onto near-field avalanche photodiodes fabricated from GaAs. Embedded in the diamond waveguides are nitrogen vacancy color centers, and the mapping of emission from these single-photon sources is demonstrated using our on-chip detectors, eliminating the need for external photodetectors on an optical table. These studies show the promise of hybrid optoelectronic devices at the nanoscale with applications in alternative energy, optical communication, and quantum optics.

  5. Integrated Optoelectronics for Parallel Microbioanalysis

    NASA Technical Reports Server (NTRS)

    Stirbl, Robert; Moynihan, Philip; Bearman, Gregory; Lane, Arthur

    2003-01-01

    Miniature, relatively inexpensive microbioanalytical systems ("laboratory-on-achip" devices) have been proposed for the detection of hazardous microbes and toxic chemicals. Each system of this type would include optoelectronic sensors and sensor-output-processing circuitry that would simultaneously look for the optical change, fluorescence, delayed fluorescence, or phosphorescence signatures from multiple redundant sites that have interacted with the test biomolecules in order to detect which one(s) was present in a given situation. These systems could be used in a variety of settings that could include doctors offices, hospitals, hazardous-material laboratories, biological-research laboratories, military operations, and chemical-processing plants.

  6. Optoelectronic tweezers for medical diagnostics

    NASA Astrophysics Data System (ADS)

    Kremer, Clemens; Neale, Steven; Menachery, Anoop; Barrett, Mike; Cooper, Jonathan M.

    2012-01-01

    Optoelectronic tweezers (OET) allows the spatial patterning of electric fields through selected illumination of a photoconductive surface. This enables the manipulation of micro particles and cells by creating non-uniform electrical fields that then produce dielectrophoretic (DEP) forces. The DEP responses of cells differ and can produce negative or positive (repelled or attracted to areas of high electric field) forces. Therefore OET can be used to manipulate individual cells and separate different cell types from each other. Thus OET has many applications for medical diagnostics, demonstrated here with work towards diagnosing Human African Trypanosomiasis, also known as sleeping sickness.

  7. Optoelectronics with 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Mueller, Thomas

    2015-03-01

    Two-dimensional (2D) atomic crystals, such as graphene and layered transition-metal dichalcogenides, are currently receiving a lot of attention for applications in electronics and optoelectronics. In this talk, I will review our research activities on electrically driven light emission, photovoltaic energy conversion and photodetection in 2D semiconductors. In particular, WSe2 monolayer p-n junctions formed by electrostatic doping using a pair of split gate electrodes, type-II heterojunctions based on MoS2/WSe2 and MoS2/phosphorene van der Waals stacks, 2D multi-junction solar cells, and 3D/2D semiconductor interfaces will be presented. Upon optical illumination, conversion of light into electrical energy occurs in these devices. If an electrical current is driven, efficient electroluminescence is obtained. I will present measurements of the electrical characteristics, the optical properties, and the gate voltage dependence of the device response. In the second part of my talk, I will discuss photoconductivity studies of MoS2 field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photoconductive gain. A model will be presented that reproduces our experimental findings, such as the dependence on optical power and gate voltage. We envision that the efficient photon conversion and light emission, combined with the advantages of 2D semiconductors, such as flexibility, high mechanical stability and low costs of production, could lead to new optoelectronic technologies.

  8. A 8X Oversampling Ratio, 14bit, 5-MSamples/s Cascade 3-1 Sigma-delta Modulator

    NASA Astrophysics Data System (ADS)

    Yin, Y.; Klar, H.; Wennekers, P.

    2005-05-01

    A 14-b, 5-MHz output-rate cascaded 3-1 sigma-delta analog-to-digital converters (ADC) has been developed for broadband communication applications, and a novel 4th-order noise-shaping is obtained by using the proposed architecture. At a low oversampling ratio (OSR) of 8, the ADC achieves 91.5dB signal-to-quantization ratio (SQNR), in contrast to 71.8dB of traditional 2-1-1 cascaded sigma-delta ADC in 2.5-MHz bandwidth and over 80dB signal-to-noise and distortion (SINAD) even under assumptions of awful circuit non-idealities and opamp non-linearity. The proposed architecture can potentially operates at much more high frequencies with scaled IC technology, to expand the analog-to-digital conversion rate for high-resolution applications.

  9. Optoelectronic Particle-Fallout Sensor

    NASA Technical Reports Server (NTRS)

    Ihlefeld, Curtis; Mogan, Paul A.; Youngquist, Robert C.; Moerk, John S.; Haskell, William D.; Cox, Robert B.; Rose, Kenneth A.

    1995-01-01

    Portable optoelectronic system monitors fallout of small particles (dust and fibers) onto surface at given location during extended time. Data on accumulated fallout downloaded from system to computer for display and analysis. Typical display is plot of signal proportional to amount of accumulated fallout as function of time and read to determine when contamination occurs. In many cases, possible to establish correlations between accumulations of particles and activities in vicinity. Also capable of signaling alarm in event contamination by fallout exceeds specified level. System made very inexpensively and used to monitor accumulation of dust and fibers associated with motion of air in variety of environments. Phenomena monitored indirectly by use of system might include circulation of air in buildings, and human and animal activity. Also serves as auxiliary intrusion monitor (though probably not real-time alarm) in sealed room because motion of intruder inevitably stirs up some dust.

  10. Opto-Electronic Oscillator and its Applications

    NASA Technical Reports Server (NTRS)

    Yao, X. S.; Maleki, L.

    1996-01-01

    We present the theoretical and experimental results of a new class of microwave oscillators called opto-electronic oscillators (OEO). We discuss techniques of achieving high stability single mode operation and demonstrate the applications of OEO in photonic communication systems.

  11. Transparent heat-spreader for optoelectronic applications

    DOEpatents

    Minano, Juan Carlos; Benitez, Pablo

    2014-11-04

    An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

  12. Radiation effects in optoelectronic devices. [Review

    SciTech Connect

    Barnes, C.E.; Wiczer, J.J.

    1984-05-01

    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given.

  13. Metal oxides for optoelectronic applications.

    PubMed

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  14. Metamaterial mirrors in optoelectronic devices.

    PubMed

    Esfandyarpour, Majid; Garnett, Erik C; Cui, Yi; McGehee, Michael D; Brongersma, Mark L

    2014-07-01

    The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror (φ = π) to that of a perfect magnetic mirror (φ = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band.

  15. Metal oxides for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  16. Cellular-level mass spectrometry imaging using infrared matrix-assisted laser desorption electrospray ionization (IR-MALDESI) by oversampling.

    PubMed

    Nazari, Milad; Muddiman, David C

    2015-03-01

    Mass spectrometry imaging (MSI) allows for the direct and simultaneous analysis of the spatial distribution of molecular species from sample surfaces such as tissue sections. One of the goals of MSI is monitoring the distribution of compounds at the cellular resolution in order to gain insights about the biology that occurs at this spatial level. Infrared matrix-assisted laser desorption electrospray ionization (IR-MALDESI) imaging of cervical tissue sections was performed using a spot-to-spot distance of 10 μm by utilizing the method of oversampling, where the target plate is moved by a distance that is less than the desorption radius of the laser. In addition to high spatial resolution, high mass accuracy (±1 ppm) and high mass resolving power (140,000 at m/z = 200) were achieved by coupling the IR-MALDESI imaging source to a hybrid quadrupole Orbitrap mass spectrometer. Ion maps of cholesterol in tissues were generated from voxels containing <1 cell, on average. Additionally, the challenges of imaging at the cellular level in terms of loss of sensitivity and longer analysis time are discussed.

  17. High-accuracy fourier transform interferometry, without oversampling, with a 1-bit analog-to-digital converter.

    PubMed

    Daria, V R; Saloma, C

    2000-01-01

    We demonstrate a new technique for performing accurate Fourier transform interferometry with a 1-bit analog-to-digital (AD) converter that does not require oversampling of the interferogram, unlike in other 1-bit coding schemes that rely on delta-sigma modulation. Sampling aims at locating the intersections {z(i)} of the modulation term s(z) of the interferogram and a reference sinusoid r(z) = A cos(2pif(r)z), where z is the optical path difference. A new autocorrelation-based procedure that includes the accurate recovery of the equally sampled amplitude representation {s(k)} of s(z) from {z(i)} is utilized to calculate the square of the emission spectrum of the light source (sample). The procedure is suitable for interferograms that are corrupted with additive noise. Sinusoid-crossing sampling satisfies the Nyquist sampling criterion, and a z(i) exists within each sampling interval Delta = 1/2f(r), if A >or= |s(z)| for all z, and f(r) >or= f(c), where f(c) is the highest frequency component of s(z). By locating a crossing at an accuracy of 1 part in 2(16), we determine the multimode spectrum of an argon-ion laser with a 1-bit AD converter that performs like a 13-bit amplitude-sampling AD converter.

  18. Polymer light harvesting composites for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Sun, Sam-Shajing; Wang, Dan

    2015-09-01

    Polymer based optoelectronic composites and thin film devices exhibit great potential in space applications due to their lightweight, flexible shape, high photon absorption coefficients, and robust radiation tolerance in space environment. Polymer/dye composites appear promising for optoelectronics applications due to potential enhancements in both light harvesting and charge separation. In this study, the optoelectronic properties of a series of molecular dyes paired with a conjugated polymer Poly(3-hexylthiophene-2,5-diyl) (P3HT) were investigated. Specifically, the solution PL quenching coefficients (Ksv) of dye/polymer follows a descending order from dyes of Chloro(protoporphyrinato)iron(III) (Hemin), Protoporphyrin, to meso-Tetra(4-carboxyphenyl)porphine (TCPP). In optoelectronic devices made of the P3HT/dye/PCBM composites, the short circuit current densities Jsc as well as the overall power conversion efficiencies (PCE) also follow a descending order from Hemin, Protoporphyrin, to TCPP, despite Hemin exhibits the intermediate polymer/dye LUMO (lowest unoccupied molecular orbital) offset and lowest absorption coefficient as compared to the other two dyes, i.e., the cell optoelectronic efficiency did not follow the LUMO offsets which are the key driving forces for the photo induced charge separations. This study reveals that too large LUMO offset or electron transfer driving force may result in smaller PL quenching and optoelectronic conversion efficiency, this could be another experimental evidence for the Marcus electron transfer model, particularly for the Marcus `inverted region'. It appears an optimum electron transfer driving force or strong PL quenching appears more critical than absorption coefficient for optoelectronic conversion devices.

  19. Influence of the Laser Spot Size, Focal Beam Profile, and Tissue Type on the Lipid Signals Obtained by MALDI-MS Imaging in Oversampling Mode

    NASA Astrophysics Data System (ADS)

    Wiegelmann, Marcel; Dreisewerd, Klaus; Soltwisch, Jens

    2016-12-01

    To improve the lateral resolution in matrix-assisted laser desorption/ionization mass spectrometry imaging (MALDI-MSI) beyond the dimensions of the focal laser spot oversampling techniques are employed. However, few data are available on the effect of the laser spot size and its focal beam profile on the ion signals recorded in oversampling mode. To investigate these dependencies, we produced 2 times six spots with dimensions between 30 and 200 μm. By optional use of a fundamental beam shaper, square flat-top and Gaussian beam profiles were compared. MALDI-MSI data were collected using a fixed pixel size of 20 μm and both pixel-by-pixel and continuous raster oversampling modes on a QSTAR mass spectrometer. Coronal mouse brain sections coated with 2,5-dihydroxybenzoic acid matrix were used as primary test systems. Sizably higher phospholipid ion signals were produced with laser spots exceeding a dimension of 100 μm, although the same amount of material was essentially ablated from the 20 μm-wide oversampling pixel at all spot size settings. Only on white matter areas of the brain these effects were less apparent to absent. Scanning electron microscopy images showed that these findings can presumably be attributed to different matrix morphologies depending on tissue type. We propose that a transition in the material ejection mechanisms from a molecular desorption at large to ablation at smaller spot sizes and a concomitant reduction in ion yields may be responsible for the observed spot size effects. The combined results indicate a complex interplay between tissue type, matrix crystallization, and laser-derived desorption/ablation and finally analyte ionization.

  20. Perovskite Materials: Solar Cell and Optoelectronic Applications

    SciTech Connect

    Yang, Bin; Geohegan, David B; Xiao, Kai

    2017-01-01

    Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure, and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.

  1. Bio-inspired networks for optoelectronic applications.

    PubMed

    Han, Bing; Huang, Yuanlin; Li, Ruopeng; Peng, Qiang; Luo, Junyi; Pei, Ke; Herczynski, Andrzej; Kempa, Krzysztof; Ren, Zhifeng; Gao, Jinwei

    2014-11-28

    Modern optoelectronics needs development of new materials characterized not only by high optical transparency and electrical conductivity, but also by mechanical strength, and flexibility. Recent advances employ grids of metallic micro- and nanowires, but the overall performance of the resulting material composites remains unsatisfactory. In this work, we propose a new strategy: application of natural scaffoldings perfected by evolution. In this context, we study two bio-inspired networks for two specific optoelectronic applications. The first network, intended for solar cells, light sources and similar devices, has a quasi-fractal structure and is derived directly from a chemically extracted leaf venation system. The second network is intended for touch screens and flexible displays, and is obtained by metalizing a spider's silk web. We demonstrate that each of these networks attain an exceptional optoelectonic and mechanical performance for its intended purpose, providing a promising direction in the development of more efficient optoelectronic devices.

  2. Bio-inspired networks for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Han, Bing; Huang, Yuanlin; Li, Ruopeng; Peng, Qiang; Luo, Junyi; Pei, Ke; Herczynski, Andrzej; Kempa, Krzysztof; Ren, Zhifeng; Gao, Jinwei

    2014-11-01

    Modern optoelectronics needs development of new materials characterized not only by high optical transparency and electrical conductivity, but also by mechanical strength, and flexibility. Recent advances employ grids of metallic micro- and nanowires, but the overall performance of the resulting material composites remains unsatisfactory. In this work, we propose a new strategy: application of natural scaffoldings perfected by evolution. In this context, we study two bio-inspired networks for two specific optoelectronic applications. The first network, intended for solar cells, light sources and similar devices, has a quasi-fractal structure and is derived directly from a chemically extracted leaf venation system. The second network is intended for touch screens and flexible displays, and is obtained by metalizing a spider’s silk web. We demonstrate that each of these networks attain an exceptional optoelectonic and mechanical performance for its intended purpose, providing a promising direction in the development of more efficient optoelectronic devices.

  3. A new optoelectronic reversible storage medium (Review)

    NASA Astrophysics Data System (ADS)

    Basov, N. G.; Plotnikov, A. F.; Popov, Iu. M.; Seleznev, V. N.

    1987-03-01

    The characteristics of reversible storage media designed for optical data recording (such as thermomagnetic media used in disk storages) are analyzed. Consideration is given to a new class of optoelectronic media based on MNOS structures. It is shown that the data recording density in these media can reach 100,000 bit/sq mm and that the energy of the light pulse which controls the recording will not exceed 10 to the -12th J. The use of these media broadens the possibilities for optical programming and redundancy. The data exchange rate in the optoelectronic memory can reach 10 to the 11th bit/s.

  4. Opto-electronic oscillators having optical resonators

    NASA Technical Reports Server (NTRS)

    Yao, Xiaotian Steve (Inventor); Maleki, Lutfollah (Inventor); Ilchenko, Vladimir (Inventor)

    2003-01-01

    Systems and techniques of incorporating an optical resonator in an optical part of a feedback loop in opto-electronic oscillators. This optical resonator provides a sufficiently long energy storage time and hence to produce an oscillation of a narrow linewidth and low phase noise. Certain mode matching conditions are required. For example, the mode spacing of the optical resonator is equal to one mode spacing, or a multiplicity of the mode spacing, of an opto-electronic feedback loop that receives a modulated optical signal and to produce an electrical oscillating signal.

  5. Optoelectronic semiconductor device and method of fabrication

    SciTech Connect

    Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Fan, Shanhui; Yu, Zongfu

    2014-11-25

    An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

  6. Using optoelectronic sensors in the system PROTEUS

    NASA Astrophysics Data System (ADS)

    Zyczkowski, M.; Szustakowski, M.; Ciurapinski, W.; Piszczek, M.

    2010-10-01

    The paper presents the concept of optoelectronic devices for human protection in rescue activity. The system consists of an ground robots with predicted sensor. The multisensor construction of the system ensures significant improvement of security of using on-situ like chemical or explosive sensors. The article show a various scenario of use for individual sensor in system PROTEUS.

  7. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY

    2011-11-01

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  8. Efficient Optoelectronics Teaching in Undergraduate Engineering Curriculum

    ERIC Educational Resources Information Center

    Matin, M. A.

    2005-01-01

    The Engineering Department's vision for undergraduate education for the next century is to develop a set of laboratory experiences that are thoughtfully sequenced and integrated to promote the full development of students in all courses. Optoelectronics is one of the most important and most demanding courses in Electrical and Computer Engineering.…

  9. Optoelectronic Shaft-Angle Encoder Tolerates Misalignments

    NASA Technical Reports Server (NTRS)

    Osborne, Eric P.

    1991-01-01

    Optoelectronic shaft-angle encoder measures angle of rotation of shaft with high precision while minimizing effects of eccentricity and other misalignments. Grooves on disk serve as reference marks to locate reading heads and measure increments of rotation of disk. Shaft-angle encoder, resembling optical compact-disk drive, includes two tracking heads illuminating grooves on disk and measures reflections from them.

  10. Silicon photomultiplier-based optoelectronic mixing

    NASA Astrophysics Data System (ADS)

    Yishuo, Song; Xiaoping, Du; Zhaoyang, Zeng; Shengjun, Wang

    2013-09-01

    Silicon photomultiplier (SiPM)-based optoelectronic mixing (OEM) is studied for the first time. The validity of SiPM-based OEM is experimentally verified. Compared with the avalanche photodiodes-based OEM, the SiPM-based OEM is less noisy and easy to realize for its low voltage operation and high responsivity.

  11. Optoelectronic Integrated Circuits For Neural Networks

    NASA Technical Reports Server (NTRS)

    Psaltis, D.; Katz, J.; Kim, Jae-Hoon; Lin, S. H.; Nouhi, A.

    1990-01-01

    Many threshold devices placed on single substrate. Integrated circuits containing optoelectronic threshold elements developed for use as planar arrays of artificial neurons in research on neural-network computers. Mounted with volume holograms recorded in photorefractive crystals serving as dense arrays of variable interconnections between neurons.

  12. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  13. Optoelectronic Effect in Laser Transmitter Modules

    NASA Astrophysics Data System (ADS)

    Luc, V. V.; Mien, V. D.; Eliseev, P. G.

    2001-04-01

    Optoelectronic signals in laser transmitter modules based on the voltage saturation effect of laser diode have been experimentally studied for the GaAlAs/GaAs (λ = 830 nm) and InGaAsP/InP (λ= 1310 nm) structures. The behavior of the observed optoelectronic signals has been explained as the changing of the relative position of carrier quazi-Fermi levels. The experimental method for definition of the density inversion threshold in the active region of laser diodes has been established as well as the active region internal gain has been measured. These results give the possibility of using laser transmitter modules at the same time as an amplifier and optical switch.

  14. Terahertz optoelectronics with surface plasmon polariton diode.

    PubMed

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  15. Electro-Optic Analog/Digital Converter.

    DTIC Science & Technology

    electro - optic material and a source of linearly polarized light is arranged to transmit its light energy along each of the optical waveguides. Electrodes are disposed contiguous to the optical waveguides for impressing electric fields thereacross. An input signal potential is applied to the electrodes to produce electric fields of intensity relative to each of the waveguides such that causes phase shift and resultant change of polarization which can be detected as representative of a binary ’one’ or binary ’zero’ for each of the channel optical

  16. Analog/Digital System for Germanium Thermometer

    NASA Technical Reports Server (NTRS)

    Woodhouse, Christopher

    1988-01-01

    Electronic system containing analog and digital circuits makes high-precision, four-wire measurements of resistance of each germanium resistance thermometer (GRT) in array of devices, using alternating current (ac) of 1 micro-A. At end measurement interval, contents of negative register subtracted from positive one, resulting in very-narrow-band synchronous demodulation of carrier wave and suppression of out-of-band noise. Microprocessor free to perform other duties after measurement complete. Useful in noisy terrestrial environments encountered in factories.

  17. Analog current mode analog/digital converter

    NASA Technical Reports Server (NTRS)

    Hadidi, Khayrollah (Inventor)

    1996-01-01

    An improved subranging or comparator circuit is provided for an analog-to-digital converter. As a subranging circuit, the circuit produces a residual signal representing the difference between an analog input signal and an analog of a digital representation. This is achieved by subdividing the digital representation into two or more parts and subtracting from the analog input signal analogs of each of the individual digital portions. In another aspect of the present invention, the subranging circuit comprises two sets of differential input pairs in which the transconductance of one differential input pair is scaled relative to the transconductance of the other differential input pair. As a consequence, the same resistor string may be used for two different digital-to-analog converters of the subranging circuit.

  18. Organic Optoelectronic Materials: Mechanisms and Applications.

    PubMed

    Ostroverkhova, Oksana

    2016-11-23

    Organic (opto)electronic materials have received considerable attention due to their applications in thin-film-transistors, light-emitting diodes, solar cells, sensors, photorefractive devices, and many others. The technological promises include low cost of these materials and the possibility of their room-temperature deposition from solution on large-area and/or flexible substrates. The article reviews the current understanding of the physical mechanisms that determine the (opto)electronic properties of high-performance organic materials. The focus of the review is on photoinduced processes and on electronic properties important for optoelectronic applications relying on charge carrier photogeneration. Additionally, it highlights the capabilities of various experimental techniques for characterization of these materials, summarizes top-of-the-line device performance, and outlines recent trends in the further development of the field. The properties of materials based both on small molecules and on conjugated polymers are considered, and their applications in organic solar cells, photodetectors, and photorefractive devices are discussed.

  19. Light Management with Nanostructures for Optoelectronic Devices.

    PubMed

    Leung, Siu-Fung; Zhang, Qianpeng; Xiu, Fei; Yu, Dongliang; Ho, Johnny C; Li, Dongdong; Fan, Zhiyong

    2014-04-17

    Light management is of paramount importance to improve the performance of optoelectronic devices including photodetectors, solar cells, and light-emitting diodes. Extensive studies have shown that the efficiency of these optoelectronic devices largely depends on the device structural design. In the case of solar cells, three-dimensional (3-D) nanostructures can remarkably improve device energy conversion efficiency via various light-trapping mechanisms, and a number of nanostructures were fabricated and exhibited tremendous potential for highly efficient photovoltaics. Meanwhile, these optical absorption enhancement schemes can benefit photodetectors by achieving higher quantum efficiency and photon extraction efficiency. On the other hand, low extraction efficiency of a photon from the emissive layer to outside often puts a constraint on the external quantum efficiency (EQE) of LEDs. In this regard, different designs of device configuration based on nanostructured materials such as nanoparticles and nanotextures were developed to improve the out-coupling efficiency of photons in LEDs under various frameworks such as waveguides, plasmonic theory, and so forth. In this Perspective, we aim to provide a comprehensive review of the recent progress of research on various light management nanostructures and their potency to improve performance of optoelectronic devices including photodetectors, solar cells, and LEDs.

  20. Intriguing Optoelectronic Properties of Metal Halide Perovskites.

    PubMed

    Manser, Joseph S; Christians, Jeffrey A; Kamat, Prashant V

    2016-11-09

    A new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX3 stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewed with an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CH3NH3PbI3) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2-dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.

  1. A current-excited triple-time-voltage oversampling method for bio-impedance model for cost-efficient circuit system.

    PubMed

    Yan Hong; Yong Wang; Wang Ling Goh; Yuan Gao; Lei Yao

    2015-08-01

    This paper presents a mathematic method and a cost-efficient circuit to measure the value of each component of the bio-impedance model at electrode-electrolyte interface. The proposed current excited triple-time-voltage oversampling (TTVO) method deduces the component values by solving triple simultaneous electric equation (TSEE) at different time nodes during a current excitation, which are the voltage functions of time. The proposed triple simultaneous electric equations (TSEEs) allows random selections of the time nodes, hence numerous solutions can be obtained during a single current excitation. Following that, the oversampling approach is engaged by averaging all solutions of multiple TSEEs acquired after a single current excitation, which increases the practical measurement accuracy through the improvement of the signal-to-noise ratio (SNR). In addition, a print circuit board (PCB) that consists a switched current exciter and an analog-to-digital converter (ADC) is designed for signal acquisition. This presents a great cost reduction when compared against other instrument-based measurement data reported [1]. Through testing, the measured values of this work is proven to be in superb agreements on the true component values of the electrode-electrolyte interface model. This work is most suited and also useful for biological and biomedical applications, to perform tasks such as stimulations, recordings, impedance characterizations, etc.

  2. Assembly of opto-electronic module with improved heat sink

    DOEpatents

    Chan, Benson; Fortier, Paul Francis; Freitag, Ladd William; Galli, Gary T.; Guindon, Francois; Johnson, Glen Walden; Letourneau, Martial; Sherman, John H.; Tetreault, Real

    2004-11-23

    A heat sink for a transceiver optoelectronic module including dual direct heat paths and a structure which encloses a number of chips having a central web which electrically isolates transmitter and receiver chips from each other. A retainer for an optical coupler having a port into which epoxy is poured. An overmolded base for an optoelectronic module having epoxy flow controller members built thereon. Assembly methods for an optoelectronic module including gap setting and variation of a TAB bonding process.

  3. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  4. Shallow halogen vacancies in halide optoelectronic materials

    DOE PAGES

    Shi, Hongliang; Du, Mao -Hua

    2014-11-05

    Halogen vacancies (VH) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., CH3NH3PbI3 and TlBr. Both CH3NH3PbI3 and TlBr have been found to have shallow VH, in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., CH3NH3PbI3, CH3NH3SnI3 (photovoltaic materials), TlBr, and CsPbBr3, (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VHmore » is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of ns2 ions both play important roles in creating shallow VH in halides such as CH3NH3PbI3, CH3NH3SnI3, and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH, such as those with long cation-cation distances and low anion coordination numbers, and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH. Furthermore, the results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.« less

  5. Shallow halogen vacancies in halide optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Du, Mao-Hua

    2014-11-01

    Halogen vacancies (VH ) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., C H3N H3Pb I3 and TlBr. Both C H3N H3Pb I3 and TlBr have been found to have shallow VH , in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., C H3N H3Pb I3 , C H3N H3Sn I3 (photovoltaic materials), TlBr, and CsPbB r3 (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VH is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of n s2 ions both play important roles in creating shallow VH in halides such as C H3N H3Pb I3 , C H3N H3Sn I3 , and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH , such as those with large cation-cation distances and low anion coordination numbers and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH . The results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.

  6. Statistical conjugated polymers comprising optoelectronically distinct units.

    PubMed

    Hollinger, Jon; Sun, Jing; Gao, Dong; Karl, Dominik; Seferos, Dwight S

    2013-03-12

    Poly(3-heptylselenophene)-stat-poly(3-hexylthiophene) is synthesized and characterized in terms of its crystallinity and performance in an organic photovoltaic (OPV) cell. Despite the random distribution of units along the polymer main chain, the material is semi-crystalline, as demonstrated by differential scanning calorimetry and wide-angle X-ray diffraction. Thin-film absorption suggests an increased compatibility than seen with 3-hexylselenophene monomer. Optoelectronic properties are an average of the two homopolymers, and OPV performance is enhanced by a broadened absorption profile and a favorable morphology.

  7. In-situ nanochemistry for optoelectronics

    NASA Astrophysics Data System (ADS)

    Kim, Won Jin

    This thesis describes recent results on simple methods to arrange nanosize objects such as semiconductor nanocrystals, noble metal nanoparticles, and upconversion nanophosphors by means of top-down processes. Specific focus is directed towards approaches to produce predefined patterns of various nanostructure materials using optical lithography for direct writing of films for optoelectronic and electronic devices. To obtain photo-patternability, the nanostructure materials [for example semiconductor nanocrystals (CdSe, CdTe, PbSe), metallic nanoparticles (Ag), upconversion nanophosphors (Er3+/Yb 3+ or Tm3+/Yb3+ co-doped NaYF4 ), and transparent conducting oxide nanoparticles (ITO, ZnO)] were functionalized by incorporation of the functional ligand t-butoxycarbonyl (t-BOC) which has an acid-labile moiety. The t-BOC group undergoes a cleavage, when subjected to UV irradiation in the presence of a photo acid generator (PAG) to releases isobutene and carbon dioxide. Depending on the need of the application, either the exposed regions (negative pattern) or the non-exposed regions (positive pattern) could be developed from the exposed films by appropriate solvent selection. The photo exposed regions of the film are rendered hydrophilic due to the degradation of the t-BOC, the un-exposed regions remain hydrophobic. This solubility change in the QDs is the basis of their patternablity. The un-exposed regions can be removed to obtain the negative pattern by washing with hydrophobic solvents, whereas the exposed regions can be selectively removed to obtain positive pattern by washing with hydrophilic solvents. This change in the surface chemistry results in the ability to photo-pattern the various nanostructure materials where desired for a number of optoelectronic device geometries. We demonstrate that the ultimate resolution (linewidth and spacing) of this technique is below submicron. Details on technological aspects concerning nanoparticle patterning as well as practical

  8. ARTICLES: Optoelectronic readout with an injection laser

    NASA Astrophysics Data System (ADS)

    Luc, Vu V.; Eliseev, P. G.; Man'ko, Margarita A.; Mikaelyan, T. T.; Okhotnikov, O. G.; Sokolov, S. N.

    1982-09-01

    An investigation was made of the possibility of utilizing an injection heterolaser in optical devices for data retrieval. An injection laser was used both as a source and detector of its own radiation reflected from a data carrier (optoelectronic readout). The influence of the reflected radiation was due to quasisteady modulation of the Q factor of the resonator, which was accompanied by modulation of the voltage across the laser diode. A study was made of the influence of the pump current on the useful signal and it was found that this current was related to the differential resistance of the laser diode.

  9. A Design Methodology for Optoelectronic VLSI

    DTIC Science & Technology

    2007-01-01

    soldered to a copper -clad printed circuit (PC) board, are no longer sufficient for today’s high-speed ICs. A processing chip that can compute data at a rate...design approach. A new design methodology has to be adopted to take advan- tage of the benefits that FSOI offers. Optoelectronic VLSI is the coupling of...and connections are made from chip to chip via traces of copper wire, as shown in Figure 2-2. The signal from a logic gate on one chip to a logic gate

  10. 77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-30

    ... COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... the United States after importation of certain optoelectronic devices for fiber optic communications... importation of certain optoelectronic devices for fiber optic communications, components thereof, and...

  11. Time-Resolved Measurements in Optoelectronic Microbioanalysis

    NASA Technical Reports Server (NTRS)

    Bearman, Gregory; Kossakovski, Dmitri

    2003-01-01

    A report presents discussion of time-resolved measurements in optoelectronic microbioanalysis. Proposed microbioanalytical laboratory-on-a-chip devices for detection of microbes and toxic chemicals would include optoelectronic sensors and associated electronic circuits that would look for fluorescence or phosphorescence signatures of multiple hazardous biomolecules in order to detect which ones were present in a given situation. The emphasis in the instant report is on gating an active-pixel sensor in the time domain, instead of filtering light in the wavelength domain, to prevent the sensor from responding to a laser pulse used to excite fluorescence or phosphorescence while enabling the sensor to respond to the decaying fluorescence or phosphorescence signal that follows the laser pulse. The active-pixel sensor would be turned on after the laser pulse and would be used to either integrate the fluorescence or phosphorescence signal over several lifetimes and many excitation pulses or else take time-resolved measurements of the fluorescence or phosphorescence. The report also discusses issues of multiplexing and of using time-resolved measurements of fluorophores with known different fluorescence lifetimes to distinguish among them.

  12. Optoelectronic inventory system for special nuclear material

    SciTech Connect

    Sieradzki, F.H.

    1994-01-01

    In support of the Department of Energy`s Dismantlement Program, the Optoelectronics Characterization and Sensor Development Department 2231 at Sandia National Laboratories/New Mexico has developed an in situ nonintrusive Optoelectronic Inventory System (OIS) that has the potential for application wherever periodic inventory of selected material is desired. Using a network of fiber-optic links, the OIS retrieves and stores inventory signatures from data storage devices (which are permanently attached to material storage containers) while inherently providing electromagnetic pulse immunity and electrical noise isolation. Photovoltaic cells (located within the storage facility) convert laser diode optic power from a laser driver to electrical energy. When powered and triggered, the data storage devices sequentially output their digital inventory signatures through light-emitting diode/photo diode data links for retrieval and storage in a mobile data acquisition system. An item`s exact location is determined through fiber-optic network and software design. The OIS provides an on-demand method for obtaining acceptable inventory reports while eliminating the need for human presence inside the material storage facility. By using modularization and prefabricated construction with mature technologies and components, an OIS installation with virtually unlimited capacity can be tailored to the customer`s requirements.

  13. Optoelectronic pH Meter: Further Details

    NASA Technical Reports Server (NTRS)

    Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.

    2009-01-01

    A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

  14. Optoelectronic hit/miss transform for screening cervical smear slides

    NASA Astrophysics Data System (ADS)

    Narayanswamy, R.; Turner, R. M.; McKnight, D. J.; Johnson, K. M.; Sharpe, J. P.

    1995-06-01

    An optoelectronic morphological processor for detecting regions of interest (abnormal cells) on a cervical smear slide using the hit/miss transform is presented. Computer simulation of the algorithm tested on 184 Pap-smear images provided 95% detection and 5% false alarm. An optoelectronic implementation of the hit/miss transform is presented, along with preliminary experimental results.

  15. Optoelectronic sensors for subsea oil and gas production

    NASA Astrophysics Data System (ADS)

    McStay, D.; Shiach, G.; Nolan, A.; McAvoy, S.

    2007-07-01

    The potential for optoelectronic sensor technology to provide the monitoring and control systems required for advanced subsea hydrocarbon production management is described. The utilisation of optoelectronic sensor technology to produce a new class of subsea Christmas Tree with in-built enhanced production monitoring and control systems as well as effective environmental monitoring systems is reported.

  16. Six Classes of Diffraction-Based Optoelectronic Instruments

    NASA Technical Reports Server (NTRS)

    Spremo, Stevan; Fuhr, Peter; Schipper, John

    2003-01-01

    Six classes of diffraction-based optoelectronic instruments have been invented as means for wavelength-based processing of light. One family of anticipated applications lies in scientific instrumentation for studying chemical and physical reactions that affect and/or are affected differently by light of different wavelengths or different combinations of wavelengths. Another family of anticipated applications lies in optoelectronic communication systems.

  17. Shallow halogen vacancies in halide optoelectronic materials

    SciTech Connect

    Shi, Hongliang; Du, Mao -Hua

    2014-11-05

    Halogen vacancies (VH) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., CH3NH3PbI3 and TlBr. Both CH3NH3PbI3 and TlBr have been found to have shallow VH, in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., CH3NH3PbI3, CH3NH3SnI3 (photovoltaic materials), TlBr, and CsPbBr3, (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VH is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of ns2 ions both play important roles in creating shallow VH in halides such as CH3NH3PbI3, CH3NH3SnI3, and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH, such as those with long cation-cation distances and low anion coordination numbers, and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH. Furthermore, the results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.

  18. Optoelectronic determination of insect presence in fruit

    NASA Astrophysics Data System (ADS)

    Shrestha, Bim P.; Guyer, Daniel E.; Ariana, Diwan P.

    2004-03-01

    Opto-electronic methods represent a potential to identify the presence of insect activities on or within agricultural commodities. Such measurements may detect actual insect presence or indirect secondary changes in the product resulting from past or present insect activities. Preliminary imaging studies have demonstrated some unique spectral characteristics of insect larvae on cherries. A detailed study on spectral characteristics of healthy and infested tart cherry tissue with and without larvae (Plum Curculio) was conducted for reflectance, transmittance and interactance modes for each of UV and visible/NIR light sources. The intensity of transmitted UV signals through the tart cherry was found to be weak; however, the spectral properties of UV light in reflectance mode has revealed some typical characteristics of larvae on healthy and infested tissue. The larvae on tissue were found to exhibit UV induced fluorescence signals in the range of 400-700 nm. Multi spectral imaging of the halved tart cherry has also corroborated this particular behavior of plum curculio larvae. The gray scale subtraction between corresponding pixels in these multi-spectral images has helped to locate the larvae precisely on the tart cherry tissue background, which otherwise was inseparable. The spectral characteristics of visible/NIR energy in transmittance and reflectance mode are capable of estimating the secondary effect of infestation in tart cherry tissue. The study has shown the shifting in peaks of reflected and transmitted signals from healthy and infested tissues and coincides with the concept of browning of tissue at cell level as a process of infestation. Interactance study has been carried out to study the possibility of coupling opto-electronic devices with the existing pitting process. The shifting of peaks has been observed for the normalized intensity of healthy and infested tissues. The study has been able to establish the inherent spectral characteristic of these

  19. Towards an optoelectronic luminescent sensing device

    NASA Astrophysics Data System (ADS)

    Papkovsky, Dmitry B.; Ponomarev, Gely V.; Ogurtsov, Vladimir I.; Dvornikov, Alexey A.

    1994-02-01

    The new dye which has improved spectral characteristics synthesized on the basis of platinum complex of the porphyrin-like compound was studied with the view of its application to oxygen sensing. It resulted in a new solid-state oxygen-sensitive material with advanced working characteristics which is highly compatible with excitation with yellow LEDs. This new sensing material makes it possible to develop simple fiber-optoelectronic devices -- prototype oxygen sensors. One of the embodiments was constructed which utilizes powerful yellow LED as a light source, silicone photodiode as a photodetector, and has a fiber-optic output terminated with an active element (oxygen membrane). The electronic scheme of the device provides modulation of LED at a kilohertz range frequency and is capable of measuring specific luminescent signal. The system is now under improvement and optimization with emphasis to lifetime measurements performed by phase method.

  20. Implantable optoelectronic probes for in vivo optogenetics.

    PubMed

    Iseri, Ege; Kuzum, Duygu

    2017-02-15

    More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

  1. Implantable optoelectronic probes for in vivo optogenetics

    NASA Astrophysics Data System (ADS)

    Iseri, Ege; Kuzum, Duygu

    2017-06-01

    More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

  2. Optoelectronic date acquisition system based on FPGA

    NASA Astrophysics Data System (ADS)

    Li, Xin; Liu, Chunyang; Song, De; Tong, Zhiguo; Liu, Xiangqing

    2015-11-01

    An optoelectronic date acquisition system is designed based on FPGA. FPGA chip that is EP1C3T144C8 of Cyclone devices from Altera corporation is used as the centre of logic control, XTP2046 chip is used as A/D converter, host computer that communicates with the date acquisition system through RS-232 serial communication interface are used as display device and photo resistance is used as photo sensor. We use Verilog HDL to write logic control code about FPGA. It is proved that timing sequence is correct through the simulation of ModelSim. Test results indicate that this system meets the design requirement, has fast response and stable operation by actual hardware circuit test.

  3. Assembling silver nanowires using optoelectronic tweezers

    NASA Astrophysics Data System (ADS)

    Zhang, Shuailong; Cooper, Jonathan M.; Neale, Steve L.

    2016-03-01

    Light patterned dielectrophoresis or optoelectronic tweezers (OET) has been proved to be an effective micromanipulation technology for cell separation, cell sorting and control of cell interactions. Apart from being useful for cell biology experiments, the capability of moving small objects accurately also makes OET an attractive technology for other micromanipulation applications. In particular, OET has the potential to be used for efficiently and accurately assembling small optoelectronic/electronic components into circuits. This approach could produce a step change in the size of the smallest components that are routinely assembled; down from the current smallest standard component size of 400×200 μm (0402 metric) to components a few microns across and even nanostructured components. In this work, we have demonstrated the use of OET to manipulate conductive silver nanowires into different patterns. The silver nanowires (typical diameter: 60 nm; typical length: 10 μm) were suspended in a 15 mS/m solution of KCL in water and manipulated by positive dielectrophoresis force generated by OET. A proof-of-concept demonstration was also made to prove the feasibility of using OET to manipulate silver nanowires to form a 150-μm-long conductive path between two isolated electrodes. It can be seen that the resistance between two electrodes was effectively brought down to around 700 Ω after the silver nanowires were assembled and the solution evaporated. Future work in this area will focus on increasing the conductivity of these tracks, encapsulating the assembled silver nanowires to prevent silver oxidation and provide mechanical protection, which can be achieved via 3D printing and inkjet printing technology.

  4. Integrated NEMS and optoelectronics for sensor applications.

    SciTech Connect

    Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R.; Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade; Okandan, Murat; Peterson, Kenneth Allen

    2008-01-01

    This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

  5. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    SciTech Connect

    Du, Mao -Hua; Shi, Hongliang; Ming, Wenmei

    2016-03-29

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of ns2 ions (e.g., Tl+, Pb2+, and Bi3+). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain Bi3+, which is also an ns2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of band gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected Bi3+ based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n-BiSeBr, p-BiSI, and p-BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p-type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at

  6. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    DOE PAGES

    Du, Mao -Hua; Shi, Hongliang; Ming, Wenmei

    2016-03-29

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of ns2 ions (e.g., Tl+, Pb2+, and Bi3+). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain Bi3+, which is also an ns2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of bandmore » gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected Bi3+ based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n-BiSeBr, p-BiSI, and p-BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p-type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. As a result, defect calculations indeed show that

  7. Magnetometer Based on Optoelectronic Microwave Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Strekalov, Dmitry; Matsko, Andrey

    2005-01-01

    proposed instrument, intended mainly for use as a magnetometer, would include an optoelectronic oscillator (OEO) stabilized by an atomic cell that could play the role of a magnetically tunable microwave filter. The microwave frequency would vary with the magnetic field in the cell, thereby providing an indication of the magnetic field. The proposed magnetometer would offer a combination of high accuracy and high sensitivity, characterized by flux densities of less than a picotesla. In comparison with prior magnetometers, the proposed magnetometer could, in principle, be constructed as a compact, lightweight instrument: It could fit into a package of about 10 by 10 by 10 cm and would have a mass <0.5 kg. As described in several prior NASA Tech Briefs articles, an OEO is a hybrid of photonic and electronic components that generates highly spectrally pure microwave radiation, and optical radiation modulated by the microwave radiation, through direct conversion between laser light and microwave radiation in an optoelectronic feedback loop. As used here, "atomic cell" signifies a cell containing a vapor, the constituent atoms of which can be made to undergo transitions between quantum states, denoted hyperfine levels, when excited by light in a suitable wavelength range. The laser light must be in this range. The energy difference between the hyperfine levels defines the microwave frequency. In the proposed instrument (see figure), light from a laser would be introduced into an electro-optical modulator (EOM). Amplitude-modulated light from the exit port of the EOM would pass through a fiber-optic splitter having two output branches. The light in one branch would be sent through an atomic cell to a photodiode. The light in the other branch would constitute the microwave-modulated optical output. Part of the light leaving the atomic cell could also be used to stabilize the laser at a frequency in the vicinity of the desired hyperfine or other quantum transition. The

  8. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Ming, Wenmei; Du, Mao-Hua

    2016-03-01

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of n s2 ions (e.g., T l+ , P b2 + , and B i3 + ). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain B i3 + , which is also an n s2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of band gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected B i3 + based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n -BiSeBr, p -BiSI, and p -BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p -type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. Defect calculations indeed show that the

  9. Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

    NASA Astrophysics Data System (ADS)

    Liang, Yu Teng

    Over the past couple decades, fundamental research into carbon nanomaterials has produced a steady stream of groundbreaking physical science. Their record setting mechanical strength, chemical stability, and optoelectronic performance have fueled many optimistic claims regarding the breadth and pace of carbon nanotube and graphene integration. However, present synthetic, processing, and economic constraints have precluded these materials from many practical device applications. To overcome these limitations, novel synthetic techniques, processing methodologies, device geometries, and mechanistic insight were developed in this dissertation. The resulting advancements in material production and composite device performance have brought carbon nanomaterials ever closer to commercial implementation. For improved materials processing, vacuum co-deposition was first demonstrated as viable technique for forming carbon nanocomposite films without property distorting covalent modifications. Co-deposited nanoparticle, carbon nanotube, and graphene composite films enabled rapid device prototyping and compositional optimization. Cellulosic polymer stabilizers were then shown to be highly effective carbon nanomaterial dispersants, improving graphene production yields by two orders of magnitude in common organic solvents. By exploiting polarity interactions, iterative solvent exchange was used to further increase carbon nanomaterial dispersion concentrations by an additional order of magnitude, yielding concentrated inks. On top of their low causticity, these cellulosic nanomaterial inks have highly tunable viscosities, excellent film forming capacity, and outstanding thermal stability. These processing characteristics enable the efficient scaling of carbon nanomaterial coatings and device production using existing roll-to-roll fabrication techniques. Utilizing these process improvements, high-performance gas sensing, energy storage, transparent conductor, and photocatalytic

  10. A simple encapsulation method for organic optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Sun, Qian-Qian; An, Qiao-Shi; Zhang, Fu-Jun

    2014-08-01

    The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become a key problem for further development. In this paper, we report one simple encapsulation method for organic optoelectronic devices with a parafilm, based on ternary polymer solar cells (PSCs). The power conversion efficiencies (PCE) of PSCs with and without encapsulation decrease from 2.93% to 2.17% and from 2.87% to 1.16% after 168-hours of degradation under an ambient environment, respectively. The stability of PSCs could be enhanced by encapsulation with a parafilm. The encapsulation method is a competitive choice for organic optoelectronic devices, owing to its low cost and compatibility with flexible devices.

  11. Metal-dielectric hybrid surfaces as integrated optoelectronic interfaces

    DOEpatents

    Narasimhan, Vijay K.; Hymel, Thomas M.; Lai, Ruby A.; Cui, Yi

    2017-01-03

    An optoelectronic device has a hybrid metal-dielectric optoelectronic interface including an array of nanoscale dielectric resonant elements (e.g., nanopillars), and a metal film disposed between the dielectric resonant elements and below a top surface of the resonant elements such that the dielectric resonant elements protrude through the metal film. The device may also include an anti-reflection coating. The device may further include a metal film layer on each of the dielectric resonant elements.

  12. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    DOEpatents

    Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  13. An efficient algorithm coupled with synthetic minority over-sampling technique to classify imbalanced PubChem BioAssay data.

    PubMed

    Hao, Ming; Wang, Yanli; Bryant, Stephen H

    2014-01-02

    It is common that imbalanced datasets are often generated from high-throughput screening (HTS). For a given dataset without taking into account the imbalanced nature, most classification methods tend to produce high predictive accuracy for the majority class, but significantly poor performance for the minority class. In this work, an efficient algorithm, GLMBoost, coupled with Synthetic Minority Over-sampling TEchnique (SMOTE) is developed and utilized to overcome the problem for several imbalanced datasets from PubChem BioAssay. By applying the proposed combinatorial method, those data of rare samples (active compounds), for which usually poor results are generated, can be detected apparently with high balanced accuracy (Gmean). As a comparison with GLMBoost, Random Forest (RF) combined with SMOTE is also adopted to classify the same datasets. Our results show that the former (GLMBoost+SMOTE) not only exhibits higher performance as measured by the percentage of correct classification for the rare samples (Sensitivity) and Gmean, but also demonstrates greater computational efficiency than the latter (RF+SMOTE). Therefore, we hope that the proposed combinatorial algorithm based on GLMBoost and SMOTE could be extensively used to tackle the imbalanced classification problem.

  14. Optoelectronic devices incorporating fluoropolymer compositions for protection

    DOEpatents

    Chen, Xuming; Chum, Pak-Wing S.; Howard, Kevin E.; Lopez, Leonardo C.; Sumner, William C.; Wu, Shaofu

    2015-12-22

    The fluoropolymer compositions of the present invention generally incorporate ingredients comprising one or more fluoropolymers, an ultraviolet light protection component (hereinafter UV protection component), and optionally one or more additional ingredients if desired. The UV protection component includes a combination of at least one hindered tertiary amine (HTA) compound having a certain structure and a weight average molecular weight of at least 1000. This tertiary amine is used in combination with at least one organic, UV light absorbing compound (UVLA compound) having a weight average molecular weight greater than 500. When the HTA compound and the UVLA compound are selected according to principles of the present invention, the UV protection component provides fluoropolymer compositions with significantly improved weatherability characteristics for protecting underlying materials, features, structures, components, and/or the like. In particular, fluoropolymer compositions incorporating the UV protection component of the present invention have unexpectedly improved ability to resist blackening, coloration, or other de gradation that may be caused by UV exposure. As a consequence, devices protected by these compositions would be expected to have dramatically improved service life. The compositions have a wide range of uses but are particularly useful for forming protective layers in optoelectronic devices.

  15. Colloidal quantum dot materials for infrared optoelectronics

    NASA Astrophysics Data System (ADS)

    Arinze, Ebuka S.; Nyirjesy, Gabrielle; Cheng, Yan; Palmquist, Nathan; Thon, Susanna M.

    2015-09-01

    Colloidal quantum dots (CQDs) are an attractive material for optoelectronic applications because they combine flexible, low-cost solution-phase synthesis and processing with the potential for novel functionality arising from their nanostructure. Specifically, the bandgap of films composed of arrays of CQDs can be tuned via the quantum confinement effect for tailored spectral utilization. PbS-based CQDs can be tuned throughout the near and mid-infrared wavelengths and are a promising materials system for photovoltaic devices that harvest non-visible solar radiation. The performance of CQD solar cells is currently limited by an absorption-extraction compromise, whereby photon absorption lengths in the near infrared spectral regime exceed minority carrier diffusion lengths in the bulk films. Several light trapping strategies for overcoming this compromise and increasing the efficiency of infrared energy harvesting will be reviewed. A thin-film interference technique for creating multi-colored and transparent solar cells will be presented, and a discussion of designing plasmonic nanomaterials based on earth-abundant materials for integration into CQD solar cells is developed. The results indicate that it should be possible to achieve high absorption and color-tunability in a scalable nanomaterials system.

  16. Emissive polymeric materials for optoelectronic devices

    SciTech Connect

    Shiang, Joseph John; Chichak, Kelly Scott; Cella, James Anthony; Lewis, Larry Neil; Janora, Kevin Henry

    2011-07-05

    Polymers including at least one structural unit derived from a compound of formula I or including at least one pendant group of formula II may be used in optoelectronic devices ##STR00001## wherein R.sup.1, R.sup.3, R.sup.4 and R.sup.6 are independently hydrogen, alkyl, alkoxy, oxaalkyl, alkylaryl, aryl, arylalkyl, heteroaryl, substituted alkyl; substituted alkoxy, substituted oxaalkyl, substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted heteroaryl; R.sup.1a is hydrogen or alkyl; R.sup.2 is alkylene, substituted alkylene, oxaalkylene, CO, or CO.sub.2; R.sup.2a is alkylene; R.sup.5 is independently at each occurrence hydrogen, alkyl, alkylaryl, aryl, arylalkyl, alkoxy, carboxy, substituted alkyl; substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted alkoxy, X is halo, triflate, --B(OR.sup.1a).sub.2, or ##STR00002## located at the 2, 5- or 2, 7-positions; and L is derived from phenylpyridine, tolylpyridine, benzothienylpyridine, phenylisoquinoline, dibenzoquinozaline, fluorenylpyridine, ketopyrrole, 2-(1-naphthyl)benzoxazole)), 2-phenylbenzoxazole, 2-phenylbenzothiazole, coumarin, thienylpyridine, phenylpyridine, benzothienylpyridine, 3-methoxy-2-phenylpyridine, thienylpyridine, phenylimine, vinylpyridine, pyridylnaphthalene, pyridylpyrrole, pyridylimidazole, phenylindole, derivatives thereof or combinations thereof.

  17. Nanosized optoelectronic devices based on photoactivated proteins.

    PubMed

    Dimonte, Alice; Frache, Stefano; Erokhin, Victor; Piccinini, Gianluca; Demarchi, Danilo; Milano, Francesco; Micheli, Giovanni De; Carrara, Sandro

    2012-11-12

    Molecular nanoelectronics is attracting much attention, because of the possibility to add functionalities to silicon-based electronics by means of intrinsically nanoscale biological or organic materials. The contact point between active molecules and electrodes must present, besides nanoscale size, a very low resistance. To realize Metal-Molecule-Metal junctions it is, thus, mandatory to be able to control the formation of useful nanometric contacts. The distance between the electrodes has to be of the same size of the molecule being put in between. Nanogaps technology is a perfect fit to fulfill this requirement. In this work, nanogaps between gold electrodes have been used to develop optoelectronic devices based on photoactive proteins. Reaction Centers (RC) and Bacteriorhodopsin (BR) have been inserted in nanogaps by drop casting. Electrical characterizations of the obtained structures were performed. It has been demonstrated that these nanodevices working principle is based on charge separation and photovoltage response. The former is induced by the application of a proper voltage on the RC, while the latter comes from the activation of BR by light of appropriate wavelengths.

  18. Software for Use with Optoelectronic Measuring Tool

    NASA Technical Reports Server (NTRS)

    Ballard, Kim C.

    2004-01-01

    A computer program has been written to facilitate and accelerate the process of measurement by use of the apparatus described in "Optoelectronic Tool Adds Scale Marks to Photographic Images" (KSC-12201). The tool contains four laser diodes that generate parallel beams of light spaced apart at a known distance. The beams of light are used to project bright spots that serve as scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The computer program is applicable to a scene that contains the laser spots and that has been imaged in a square pixel format that can be imported into a graphical user interface (GUI) generated by the program. It is assumed that the laser spots and the distance(s) to be measured all lie in the same plane and that the plane is perpendicular to the line of sight of the camera used to record the image

  19. Optical and optoelectronic properties of organic nanomaterials

    NASA Astrophysics Data System (ADS)

    Satapathi, Soumitra

    In this dissertation research, organic nanomaterials, such as semiconducting polymer nanoparticles, graphene nanosheets and organic small molecules were successfully utilized for fabrication of organic solar cells, optical sensors and for high contrast imaging of cancer cells. Semiconducting polymer nanoparticles were synthesized by a simple miniemulsion technique. These size controllable polymeric nanoparticles were proven to be able to optimize the morphologies of the bulk heterojunction solar cells and to provide fundamental insight into the evolution of the nanostructures. Highly sensitive optical sensors were fabricated using these polymeric nanoparticles for efficient detection of nitroaromatic explosives, such as 2,4 dinitrotoluene (DNT) and 2,4,6 trinitrotoluene (TNT) in aqueous medium as well as in vapor the phase. Moreover, these water dispersible and fluorescent polymer nanodots were two-photon active and could be internalized by tumor cells as demonstrated by two-photon confocal imaging. In addition to the polymer nanoparticles, the role of the graphene nanosheets in the performance enhancement of dye sensitized solar cells was also investigated. The use of organic small molecules for optical sensing of different nerve gas agents and their potential use in multiphoton imaging of cancer cells were discussed. Controlling material properties at nanoscale for optoelectronics and imaging application as discussed in this dissertation would provide new dimensions in the areas of applied physics and materials science researches.

  20. Recent progress in opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute

    2005-01-01

    The optoelectronic oscillator (OEO) is a unique device based on photonics techniques to generate highly spectrally pure microwave signals [1]. The development of the OEO was motivated by the need for high performance oscillators in the frequency range larger than 10 GHz, where conventional electronic oscillators have a number of limitations. These limitations typically stem from the product of fQ, where f is the oscillator frequency and Q is the quality factor of the resonator in the oscillator. In conventional resonators, whether electromagnetic or piezoelectric, this product is usually a constant. Thus, as the oscillator frequency is pushed higher, the quality factor degrades, resulting in degradation of the phase noise of the oscillator. An approach to mitigate the problem is to start with a very high quality signal in the 5 to 100 MHz range generated by a quartz oscillator and multiply the frequency to achieve the desired microwave signal. Here again, frequency multiplication also results in an increase of the phase noise by a factor of 2010gN, where N is the multiplication factor.

  1. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY

    2011-11-08

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## wherein R.sup.1 and R.sup.2 are independently alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.5is H or CHO; R.sup.3 and R.sup.4 are independently hydrogen, alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.11 and R.sup.12 taken together form a substituted or unsubstituted monocyclic or bicyclic heteroaromatic ring; R.sup.13 is independently at each occurrence halo, nitro, hydroxy, amino, alkyl, aryl, arylalkyl, alkoxy, substituted alkoxy, substituted alkyl, substituted aryl, or substituted arylalkyl; Ar is aryl, heteroaryl, substituted aryl, substituted heteroaryl, or a combination thereof; X is selected from a direct bond, alky, substituted alkyl, and combinations thereof; Y is CHO or NH.sub.2; Z is CHO or NH.sub.2 where Z does not equal Y; and p is 0, 1 or 2. The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  2. Assessment of dental plaque by optoelectronic methods

    NASA Astrophysics Data System (ADS)

    Negrutiu, Meda-Lavinia; Sinescu, Cosmin; Bortun, Cristina Maria; Levai, Mihaela-Codrina; Topala, Florin Ionel; Crǎciunescu, Emanuela Lidia; Cojocariu, Andreea Codruta; Duma, Virgil Florin; Podoleanu, Adrian Gh.

    2016-03-01

    The formation of dental biofilm follows specific mechanisms of initial colonization on the surface, microcolony formation, development of organized three dimensional community structures, and detachment from the surface. The structure of the plaque biofilm might restrict the penetration of antimicrobial agents, while bacteria on a surface grow slowly and display a novel phenotype; the consequence of the latter is a reduced sensitivity to inhibitors. The aim of this study was to evaluate with different optoelectronic methods the morphological characteristics of the dental biofilm. The study was performed on samples from 25 patients aged between 18 and 35 years. The methods used in this study were Spectral Domain Optical Coherence Tomography (SD-OCT) working at 870 nm for in vivo evaluations and Scanning Electron Microscopy (SEM) for validations. For each patient a sample of dental biofilm was obtained directly from the vestibular surface of the teeth's. SD-OCT produced C- and B-scans that were used to generate three dimensional (3D) reconstructions of the sample. The results were compared with SEM evaluations. The biofilm network was dramatically destroyed after the professional dental cleaning. OCT noninvasive methods can act as a valuable tool for the 3D characterization of dental biofilms.

  3. Superenhancers: Novel opportunities for nanowire optoelectronics

    PubMed Central

    Khudiyev, Tural; Bayindir, Mehmet

    2014-01-01

    Nanowires play a crucial role in the development of new generation optoelectronic devices ranging from photovoltaics to photodetectors, as these designs capitalize on the low material usage, utilize leaky-mode optical resonances and possess high conversion efficiencies associated with nanowire geometry. However, their current schemes lack sufficient absorption capacity demanded for their practical applicability, and more efficient materials cannot find widespread usage in these designs due to their rarity and cost. Here we suggest a novel and versatile nanoconcentrator scheme utilizing unique optical features of non-resonant Mie (NRM) scattering regime associated with low-index structures. The scattering regime is highly compatible with resonant Mie absorption effect taking place in nanowire absorbers. This technique in its optimized forms can provide up to 1500% total absorption enhancement, 400-fold material save and is suitable for large-area applications with significant area preservation compared to thin-film of same materials. Proposed superenhancer concept with its exceptional features such as broadband absorption enhancement, polarization immunity and material-independent manner paves the way for development of efficient nanowire photosensors or solar thermophotovoltaic devices and presents novel design opportunities for self-powered nanosystems. PMID:25511865

  4. Admin interface of Optoelectronics Research Center

    NASA Astrophysics Data System (ADS)

    Nicolae, Popescu R.; Schiopu, Paul

    2007-05-01

    The scope of the Optoelectronics Research Center website is to provide useful information about the center such as: member's cv, projects, conferences, as well as many other related information's. Based upon a worldwide study a visitor pay attention to a website for about 50-60 seconds, in this time he(she) is searching the website pages for the desired information, if the information it's found in this period the visitor will be pleased, if not he will look the information on other websites. For the CCO website a user-friendly environment has been designed, this interface has been severely tested, the results matching the 50-60 seconds time. In more than 80% of the cases the webmasters are not the same with the webdesigners; this is the point where the problems frequently occur. The content of a website has to be updated in order for visitors to get the proper information's, and not to be misled. To overcome this problem an administrator interface has been constructed. Using the admin interface the webmaster will easily update the whole website with only few clicks of a button, without need to know anything about programming or webdesign.

  5. Terahertz biochip based on optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lu, Ja-Yu; Chen, Li-Jin; Kao, Tzeng-Fu; Chang, Hsu-Hao; Liu, An-Shyi; Yu, Yi-Chun; Wu, Ruey-Beei; Liu, Wei-Sheng; Chyi, Jen-Inn; Pan, Ci-Ling; Tsai, Ming-Cheng; Sun, Chi-Kuang

    2005-10-01

    The accurate detection of minute amounts of chemical and biological substances has been a major goal in bioanalytical technology throughout the twentieth century. Fluorescence dye labeling detection remains the effective analysis method, but it modifies the surroundings of molecules and lowering the precision of detection. An alternative label free detecting tool with little disturbance of target molecules is highly desired. Theoretical calculations and experiments have demonstrated that many biomolecules have intrinsic resonance due to vibration or rotation level transitions, allowing terahertz (THz)-probing technique as a potential tool for the label-free and noninvasive detection of biomolecules. In this paper, we first ever combined the THz optoelectronic technique with biochip technology to realize THz biosensing. By transferring the edge-coupled photonic transmitter into a thin glass substrate and by integrating with a polyethylene based biochip channel, near field THz detection of the biomolecules is demonstrated. By directly acquiring the absorption micro-spectrum in the THz range, different boiomecules can then be identified according to their THz fingerprints. For preliminary studies, the capability to identity different illicit drug powders is successfully demonstrated. This novel biochip sensing system has the advantages including label-free detection, high selectivity, high sensitivity, ease for sample preparation, and ease to parallel integrate with other biochip functionality modules. Our demonstrated detection capability allows specifying various illicit drug powders with weight of nano-gram, which also enables rapid identification with minute amounts of other important molecules including DNA, biochemical agents in terrorism warfare, explosives, viruses, and toxics.

  6. GaAs-based optoelectronic neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H. (Inventor); Kim, Jae H. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

  7. Optoelectronic System Measures Distances to Multiple Targets

    NASA Technical Reports Server (NTRS)

    Liebe, Carl Christian; Abramovici, Alexander; Bartman, Randall; Chapsky, Jacob; Schmalz, John; Coste, Keith; Litty, Edward; Lam, Raymond; Jerebets, Sergei

    2007-01-01

    An optoelectronic metrology apparatus now at the laboratory-prototype stage of development is intended to repeatedly determine distances of as much as several hundred meters, at submillimeter accuracy, to multiple targets in rapid succession. The underlying concept of optoelectronic apparatuses that can measure distances to targets is not new; such apparatuses are commonly used in general surveying and machining. However, until now such apparatuses have been, variously, constrained to (1) a single target or (2) multiple targets with a low update rate and a requirement for some a priori knowledge of target geometry. When fully developed, the present apparatus would enable measurement of distances to more than 50 targets at an update rate greater than 10 Hz, without a requirement for a priori knowledge of target geometry. The apparatus (see figure) includes a laser ranging unit (LRU) that includes an electronic camera (photo receiver), the field of view of which contains all relevant targets. Each target, mounted at a fiducial position on an object of interest, consists of a small lens at the output end of an optical fiber that extends from the object of interest back to the LRU. For each target and its optical fiber, there is a dedicated laser that is used to illuminate the target via the optical fiber. The targets are illuminated, one at a time, with laser light that is modulated at a frequency of 10.01 MHz. The modulated laser light is emitted by the target, from where it returns to the camera (photodetector), where it is detected. Both the outgoing and incoming 10.01-MHz laser signals are mixed with a 10-MHz local-oscillator to obtain beat notes at 10 kHz, and the difference between the phases of the beat notes is measured by a phase meter. This phase difference serves as a measure of the total length of the path traveled by light going out through the optical fiber and returning to the camera (photodetector) through free space. Because the portion of the path

  8. Toward high-resolution optoelectronic retinal prosthesis

    NASA Astrophysics Data System (ADS)

    Palanker, Daniel; Huie, Philip; Vankov, Alexander; Asher, Alon; Baccus, Steven

    2005-04-01

    It has been already demonstrated that electrical stimulation of retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. Current retinal implants provide very low resolution (just a few electrodes), while several thousand pixels are required for functional restoration of sight. We present a design of the optoelectronic retinal prosthetic system that can activate a retinal stimulating array with pixel density up to 2,500 pix/mm2 (geometrically corresponding to a visual acuity of 20/80), and allows for natural eye scanning rather than scanning with a head-mounted camera. The system operates similarly to "virtual reality" imaging devices used in military and medical applications. An image from a video camera is projected by a goggle-mounted infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. Such a system provides a broad field of vision by allowing for natural eye scanning. The goggles are transparent to visible light, thus allowing for simultaneous utilization of remaining natural vision along with prosthetic stimulation. Optical control of the implant allows for simple adjustment of image processing algorithms and for learning. A major prerequisite for high resolution stimulation is the proximity of neural cells to the stimulation sites. This can be achieved with sub-retinal implants constructed in a manner that directs migration of retinal cells to target areas. Two basic implant geometries are described: perforated membranes and protruding electrode arrays. Possibility of the tactile neural stimulation is also examined.

  9. Semiselective Optoelectronic Sensors for Monitoring Microbes

    NASA Technical Reports Server (NTRS)

    Tabacco, Mary Beth; Chuang, Han; Taylor,Laura; Russo, Jaime

    2003-01-01

    Sensor systems are under development for use in real-time detection and quantitation of microbes in water without need for sampling. These systems include arrays of optical sensors; miniature, portable electronic data-acquisition circuits; and optoelectronic interfaces between the sensor arrays and data-acquisition circuits. These systems are intended for original use in long-term, inline monitoring of waterborne micro-organisms in water-reclamation systems aboard future spacecraft. They could also be adapted to similar terrestrial uses with respect to municipal water supplies, stored drinking water, and swimming water; for detecting low-level biological contamination in biotechnological, semiconductor, and pharmaceutical process streams; and in verifying the safety of foods and beverages. In addition, they could be adapted to monitoring of airborne microbes and of surfaces (e.g., to detect and/or quantitate biofilms). The designs of the sensors in these systems are based partly on those of sensors developed previously for monitoring airborne biological materials. The designs exploit molecular- recognition and fluorescence-spectroscopy techniques, such that in the presence of micro-organisms of interest, fluorescence signals change and the changes can be measured. These systems are characterized as semiselective because they respond to classes of micro-organisms and can be used to discriminate among the classes. This semiselectivity is a major aspect of the design: It is important to distinguish between (1) the principle of detection and quantitation of classes of micro-organisms by use of these sensors and (2) the principle of detection and quantitation of individual microbiological species by means of prior immuno-diagnostic and/or molecular-biology techniques. Detection of classes (in contradistinction to species) is particularly valuable when the exact nature of a contaminant is unknown.

  10. Designed self-organization for molecular optoelectronics

    NASA Astrophysics Data System (ADS)

    Norton, Michael; Neff, David; Towler, Ian; Day, Scott; Grambos, Zachary; Shremshock, Mikala; Butts, Heather; Meadows, Christiaan; Samiso, Yuko; Cao, Huan; Rahman, Mashiur

    2006-05-01

    The convergence of terahertz spectroscopy and single molecule experimentation offer significant promise of enhancement in sensitivity and selectivity in molecular recognition, identification and quantitation germane to military and security applications. This presentation reports the results of experiments which address fundamental barriers to the integration of large, patterned bio-compatible molecular opto-electronic systems with silicon based microelectronic systems. The central thrust of this approach is sequential epitaxy on surface bound single stranded DNA one-dimensional substrates. The challenge of producing highly structured macromolecular substrates, which are necessary in order to implement molecular nanolithography, has been addressed by combining "designer" synthetic DNA with biosynthetically derived plasmid components. By design, these one dimensional templates are composed of domains which contain sites which are recognized, and therefore addressable by either complementary DNA sequences and/or selected enzymes. Such design is necessary in order to access the nominal 2 nm linewidth potential resolution of nanolithography on these one-dimensional substrates. The recognition and binding properties of DNA ensure that the lithographic process is intrinsically self-organizing, and therefore self-aligning, a necessity for assembly processes at the requisite resolution. Another requirement of this molecular epitaxy approach is that the substrate must be immobilized. The challenge of robust surface immobilization is being addressed via the production of the equivalent of molecular tube sockets. In this application, multi-valent core-shell fluorescent quantum dots provide a mechanism to prepare surface attachment sites with a pre-determined 1:1 attachment site : substrate (DNA) molecule ratio.

  11. Optoelectronic Sensor System for Guidance in Docking

    NASA Technical Reports Server (NTRS)

    Howard, Richard T.; Bryan, Thomas C.; Book, Michael L.; Jackson, John L.

    2004-01-01

    The Video Guidance Sensor (VGS) system is an optoelectronic sensor that provides automated guidance between two vehicles. In the original intended application, the two vehicles would be spacecraft docking together, but the basic principles of design and operation of the sensor are applicable to aircraft, robots, vehicles, or other objects that may be required to be aligned for docking, assembly, resupply, or precise separation. The system includes a sensor head containing a monochrome charge-coupled- device video camera and pulsed laser diodes mounted on the tracking vehicle, and passive reflective targets on the tracked vehicle. The lasers illuminate the targets, and the resulting video images of the targets are digitized. Then, from the positions of the digitized target images and known geometric relationships among the targets, the relative position and orientation of the vehicles are computed. As described thus far, the VGS system is based on the same principles as those of the system described in "Improved Video Sensor System for Guidance in Docking" (MFS-31150), NASA Tech Briefs, Vol. 21, No. 4 (April 1997), page 9a. However, the two systems differ in the details of design and operation. The VGS system is designed to operate with the target completely visible within a relative-azimuth range of +/-10.5deg and a relative-elevation range of +/-8deg. The VGS acquires and tracks the target within that field of view at any distance from 1.0 to 110 m and at any relative roll, pitch, and/or yaw angle within +/-10deg. The VGS produces sets of distance and relative-orientation data at a repetition rate of 5 Hz. The software of this system also accommodates the simultaneous operation of two sensors for redundancy

  12. Optoelectronic implementation of multilayer perceptron and Hopfield neural networks

    NASA Astrophysics Data System (ADS)

    Domanski, Andrzej W.; Olszewski, Mikolaj K.; Wolinski, Tomasz R.

    2004-11-01

    In this paper we present an optoelectronic implementation of two networks based on multilayer perceptron and the Hopfield neural network. We propose two different methods to solve a problem of lack of negative optical signals that are necessary for connections between layers of perceptron as well as within the Hopfield network structure. The first method applied for construction of multilayer perceptron was based on division of signals into two channels and next to use both of them independently as positive and negative signals. The second one, applied for implementation of the Hopfield model, was based on adding of constant value for elements of matrix weight. Both methods of compensation of lack negative optical signals were tested experimentally as optoelectronic models of multilayer perceptron and Hopfield neural network. Special configurations of optical fiber cables and liquid crystal multicell plates were used. In conclusion, possible applications of the optoelectronic neural networks are briefly discussed.

  13. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOEpatents

    Shtein, Max; Yang, Fan; Forrest, Stephen R.

    2008-10-14

    A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

  14. Optoelectronics based on 2D TMDs and heterostructures

    NASA Astrophysics Data System (ADS)

    Huo, Nengjie; Yang, Yujue; Li, Jingbo

    2017-03-01

    2D materials including graphene and TMDs have proven interesting physical properties and promising optoelectronic applications. We reviewed the growth, characterization and optoelectronics based on 2D TMDs and their heterostructures, and demonstrated their unique and high quality of performances. For example, we observed the large mobility, fast response and high photo-responsivity in MoS2, WS2 and WSe2 phototransistors, as well as the novel performances in vdW heterostructures such as the strong interlayer coupling, am-bipolar and rectifying behaviour, and the obvious photovoltaic effect. It is being possible that 2D family materials could play an increasingly important role in the future nano- and opto-electronics, more even than traditional semiconductors such as silicon.

  15. Low-cost packaging of high-performance optoelectronic components

    SciTech Connect

    Lowry, M.; Lu, Shin-Yee; Pocha, M.; Strand, O.T.

    1994-08-01

    Optoelectronic component costs are often dominated by the costs of attaching fiber optic pigtails--especially for the case of single transverse mode devices. We present early results of our program in low-cost packaging. We are employing machine-vision controlled automated positioning and silicon microbench technology to reduce the costs of optoelectronic components. Our machine vision approach to automated positioning has already attained a positional accuracy of less than 5 microns in less than 5 minutes; accuracies and times are expected to improve significantly as the development progresses. Complementing the machine vision assembly is our manufacturable approach to silicon microbench technology. We will describe our silicon microbench optoelectronic device packages that incorporate built-in heaters for solder bonding reflow.

  16. Optoelectronic Infrastructure for Radio Frequency and Optical Phased Arrays

    NASA Technical Reports Server (NTRS)

    Cai, Jianhong

    2015-01-01

    Optoelectronic integrated circuits offer radiation-hardened solutions for satellite systems in addition to improved size, weight, power, and bandwidth characteristics. ODIS, Inc., has developed optoelectronic integrated circuit technology for sensing and data transfer in phased arrays. The technology applies integrated components (lasers, amplifiers, modulators, detectors, and optical waveguide switches) to a radio frequency (RF) array with true time delay for beamsteering. Optical beamsteering is achieved by controlling the current in a two-dimensional (2D) array. In this project, ODIS integrated key components to produce common RF-optical aperture operation.

  17. High bandgap III-V alloys for high efficiency optoelectronics

    DOEpatents

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  18. Optoelectronic devices, plasmonics, and photonics with topological insulators

    NASA Astrophysics Data System (ADS)

    Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.

    2017-03-01

    Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.

  19. Optoelectronic and photovoltaic devices with low-reflectance surfaces

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A. (Inventor); Jenkins, Phillip P. (Inventor)

    1993-01-01

    Low angle V-grooves are provided in the target surfaces of optoelectronic or photovoltaic devices such as solar cells and photodetectors. The low angle V-grooves increase the efficiency of the devices by promoting total internal reflection of light reflected from the target surface at the interface of the coverglass and the external environment.

  20. An Active Metamaterial Platform for Chiral Responsive Optoelectronics.

    PubMed

    Kang, Lei; Lan, Shoufeng; Cui, Yonghao; Rodrigues, Sean P; Liu, Yongmin; Werner, Douglas H; Cai, Wenshan

    2015-08-05

    Chiral-selective non-linear optics and optoelectronic signal generation are demonstrated in an electrically active photonic metamaterial. The metamaterial reveals significant chiroptical responses in both harmonic generation and the photon drag effect, correlated to the resonance behavior in the linear regime. The multifunctional chiral metamaterial with dual electrical and optical functionality enables transduction of chiroptical responses to electrical signals for integrated photonics.

  1. Intersatellite communications optoelectronics research at the Goddard Space Flight Center

    NASA Technical Reports Server (NTRS)

    Krainak, Michael A.

    1992-01-01

    A review is presented of current optoelectronics research and development at the NASA Goddard Space Flight Center for high-power, high-bandwidth laser transmitters; high-bandwidth, high-sensitivity optical receivers; pointing, acquisition, and tracking components; and experimental and theoretical system modeling at the NASA Goddard Space Flight Center. Program hardware and space flight opportunities are presented.

  2. Magnetometer Based on the Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute

    2005-01-01

    We theoretically propose and discuss properties of two schemes of an all-optical self-oscillating magnetometer based on an opto-electronic oscillator stabilized with an atomic vapor cell. Proof of the principle DC magnetic field measurements characterized with 2 x 10(exp -7) G sensitivity and 1 - 1000 mG dynamic range in one of the schemes are demonstrated.

  3. Microwave filter based on Lamb modes for optoelectronic generator

    NASA Astrophysics Data System (ADS)

    Vitko, V. V.; Nikitin, A. A.; Kondrashov, A. V.; Nikitin, A. A.; Ustinov, A. B.; Belyavskiy, P. Yu; Kalinikos, B. A.; Butler, J. E.

    2015-12-01

    Experimental results for narrowband filter based on yttrium iron garnet film epitaxially grown on gadolinium gallium garnet substrate have been shown. The principle of operation of the filter is based on excitation of Lamb modes in the substrate. We demonstrated also that the use of single crystal diamond as a substrate will significantly reduce the phase noise of the designed optoelectronic microwave generator.

  4. The Use of Opto-Electronics in Viscometry.

    ERIC Educational Resources Information Center

    Mazza, R. J.; Washbourn, D. H.

    1982-01-01

    Describes a semi-automatic viscometer which incorporates a microprocessor system and uses optoelectronics to detect flow of liquid through the capillary, flow time being displayed on a timer with accuracy of 0.01 second. The system could be made fully automatic with an additional microprocessor circuit and inclusion of a pump. (Author/JN)

  5. Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

    DOEpatents

    Thompson, Mark E.; Li, Jian; Forrest, Stephen; Rand, Barry

    2011-02-22

    An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

  6. Simultaneous thermoelectric and optoelectronic characterization of individual nanowires

    DOE PAGES

    Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; ...

    2015-11-03

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrentmore » observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.« less

  7. Simultaneous thermoelectric and optoelectronic characterization of individual nanowires

    SciTech Connect

    Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; Martinez, Julio A.; Song, Erdong; Li, Qiming

    2015-11-03

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

  8. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R [Newton, MA

    2011-02-22

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  9. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R.

    2013-04-09

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  10. Stabilizing an optoelectronic microwave oscillator with photonic filters

    NASA Technical Reports Server (NTRS)

    Strekalov, D.; Aveline, D.; Yu, N.; Thompson, R.; Matsko, A. B.; Maleki, L.

    2003-01-01

    This paper compares methods of active stabilization of an optoelectronic microwave oscillator (OEO) based on insertion of a source of optical group delay into an OEO loop. The performance of an OEO stabilized with either a high- optical cavity or an atomic cell is analyzed. We show that the elements play a role of narrow-band microwave filters improving an OEO stability.

  11. New Results with the Opto-Electronic Oscillators (OEO)

    NASA Technical Reports Server (NTRS)

    Yao, S.; Maleki, L.

    1996-01-01

    A new class of oscillators based on photonic devices is presented. These opto-electronic oscillators (OEOs) generate microwave oscillation by converting continuous energy from a light source using a feedback circuit which includes a delay element, an electro-optic switch, and a photodetctor.

  12. Pulse-train solutions and excitability in an optoelectronic oscillator

    NASA Astrophysics Data System (ADS)

    Rosin, D. P.; Callan, K. E.; Gauthier, D. J.; Schöll, E.

    2011-11-01

    We study an optoelectronic time-delay oscillator with bandpass filtering for different values of the filter bandwidth. Our experiments show novel pulse-train solutions with pulse widths that can be controlled over a three-order-of-magnitude range, with a minimum pulse width of ~150 ps. The equations governing the dynamics of our optoelectronic oscillator are similar to the FitzHugh-Nagumo model from neurodynamics with delayed feedback in the excitable and oscillatory regimes. Using a nullclines analysis, we derive an analytical proportionality between pulse width and the low-frequency cutoff of the bandpass filter, which is in agreement with experiments and numerical simulations. Furthermore, the nullclines help to describe the shape of the waveforms.

  13. Prediction of silicon-based layered structures for optoelectronic applications.

    PubMed

    Luo, Wei; Ma, Yanming; Gong, Xingao; Xiang, Hongjun

    2014-11-12

    A method based on the particle swarm optimization algorithm is presented to design quasi-two-dimensional materials. With this development, various single-layer and bilayer materials of C, Si, Ge, Sn, and Pb were predicted. A new Si bilayer structure is found to have a more favored energy than the previously widely accepted configuration. Both single-layer and bilayer Si materials have small band gaps, limiting their usages in optoelectronic applications. Hydrogenation has therefore been used to tune the electronic and optical properties of Si layers. We discover two hydrogenated materials of layered Si8H2 and Si6H2 possessing quasidirect band gaps of 0.75 and 1.59 eV, respectively. Their potential applications for light-emitting diode and photovoltaics are proposed and discussed. Our study opened up the possibility of hydrogenated Si layered materials as next-generation optoelectronic devices.

  14. Widrow-cellular neural network and optoelectronic implementation

    NASA Astrophysics Data System (ADS)

    Bal, Abdullah

    A new type of optoelectronic cellular neural network has been developed by providing the capability of coefficients adjusment of cellular neural network (CNN) using Widrow based perceptron learning algorithm. The new supervised cellular neural network is called Widrow-CNN. Despite the unsupervised CNN, the proposed learning algorithm allows to use the Widrow-CNN for various image processing applications easily. Also, the capability of CNN for image processing and feature extraction has been improved using basic joint transform correlation architecture. This hardware application presents high speed processing capability compared to digital applications. The optoelectronic Widrow-CNN has been tested for classic CNN feature extraction problems. It yields the best results even in case of hard feature extraction problems such as diagonal line detection and vertical line determination.

  15. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

    PubMed

    Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras; Coleman, Jonathan N; Strano, Michael S

    2012-11-01

    The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.

  16. High-Resolution Optoelectronic Shaft-Angle Encoder

    NASA Technical Reports Server (NTRS)

    Leviton, Douglas B.

    1994-01-01

    Improved optoelectronic encoder measures absolute angle to which shaft has been rotated. Costs little more than older, less capable encoders do, yet measures absolute angles at high resolution and does not lose absolute-angle data because generates those data anew with each reading at up to 1,000 times per second. It accumulates increments to measure total angular interval through which shaft has been turned (including unlimited number of complete turns), as long as power remains on.

  17. Highly parallel consistent labeling algorithm suitable for optoelectronic implementation.

    PubMed

    Marsden, G C; Kiamilev, F; Esener, S; Lee, S H

    1991-01-10

    Constraint satisfaction problems require a search through a large set of possibilities. Consistent labeling is a method by which search spaces can be drastically reduced. We present a highly parallel consistent labeling algorithm, which achieves strong k-consistency for any value k and which can include higher-order constraints. The algorithm uses vector outer product, matrix summation, and matrix intersection operations. These operations require local computation with global communication and, therefore, are well suited to a optoelectronic implementation.

  18. Accurate manufacturing and production of optoelectronic parts and modules

    NASA Astrophysics Data System (ADS)

    Hannula, Tapio; Karioja, Pentti; Keraenen, Kimmo; Kopola, Harri K.; Malinen, Jouko; Ollila, Jyrki

    1998-12-01

    The trends in optoelectronic products are towards higher integration level of optics, electronics and mechanics. It means smaller dimensions and tighter packaging density. The precisions in component manufacturing and accuracies in module assemblings typically are in 10 to 50 micrometer range. Due to demands of the production in series of tens of thousands it means new type of know-how in production and assembling technologies.

  19. Opto-Electronic Oscillator Using Suppressed Phase Modulation

    NASA Technical Reports Server (NTRS)

    Dick, G. John; Yu, Nan

    2007-01-01

    A proposed opto-electronic oscillator (OEO) would generate a microwave signal having degrees of frequency stability and spectral purity greater than those achieved in prior OEOs. The design of this system provides for reduction of noise levels (including the level of phase noise in the final output microwave signal) to below some of the fundamental limits of the prior OEOs while retaining the advantages of photonic generation of microwaves.

  20. Diffusion of excitons in materials for optoelectronic device applications

    NASA Astrophysics Data System (ADS)

    Singh, Jai; Narayan, Monishka Rita; Ompong, David

    2015-06-01

    The diffusion of singlet excitonsis known to occur through the Förster resonance energy transfer (FRET) mechanism and that of singlet and triplet excitonscan occur through the Dexter carrier transfer mechanism. It is shown here that if a material possesses the strong exciton-spin-orbit-photon interaction then triplet excitonscan also be transported /diffused through a mechanism like FRET. The theory is applicable to the diffusion of excitonsin optoelectronic devices like organic solar cells, organic light emitting devices and inorganic scintillators.

  1. Transparent electrodes for organic optoelectronic devices: a review

    NASA Astrophysics Data System (ADS)

    Cao, Weiran; Li, Jian; Chen, Hongzheng; Xue, Jiangeng

    2014-01-01

    Transparent conductive electrodes are one of the essential components for organic optoelectronic devices, including photovoltaic cells and light-emitting diodes. Indium-tin oxide (ITO) is the most common transparent electrode in these devices due to its excellent optical and electrical properties. However, the manufacturing of ITO film requires precious raw materials and expensive processes, which limits their compatibility with mass production of large-area, low-cost devices. The optical/electrical properties of ITO are strongly dependent on the deposition processes and treatment conditions, whereas its brittleness and the potential damage to underlying films during deposition also present challenges for its use in flexible devices. Recently, several other transparent conductive materials, which have various degrees of success relative to commercial applications have been developed to address these issues. Starting from the basic properties of ITO and the effect of various ITO surface modification methods, here we review four different groups of materials, doped metal oxides, thin metals, conducting polymers, and nanomaterials (including carbon nanotubes, graphene, and metal nanowires), that have been reported as transparent electrodes in organic optoelectronic materials. Particular emphasis is given to their optical/electrical and other material properties, deposition techniques, and applications in organic optoelectronic devices.

  2. Optoelectronic properties of valence-state-controlled amorphous niobium oxide

    NASA Astrophysics Data System (ADS)

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-01

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

  3. Advances in graphene-based optoelectronics, plasmonics and photonics

    NASA Astrophysics Data System (ADS)

    Nguyen, Bich Ha; Hieu Nguyen, Van

    2016-03-01

    Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented.

  4. Web-Enabled Optoelectronic Particle-Fallout Monitor

    NASA Technical Reports Server (NTRS)

    Lineberger, Lewis P.

    2008-01-01

    A Web-enabled optoelectronic particle- fallout monitor has been developed as a prototype of future such instruments that (l) would be installed in multiple locations for which assurance of cleanliness is required and (2) could be interrogated and controlled in nearly real time by multiple remote users. Like prior particle-fallout monitors, this instrument provides a measure of particles that accumulate on a surface as an indication of the quantity of airborne particulate contaminants. The design of this instrument reflects requirements to: Reduce the cost and complexity of its optoelectronic sensory subsystem relative to those of prior optoelectronic particle fallout monitors while maintaining or improving capabilities; Use existing network and office computers for distributed display and control; Derive electric power for the instrument from a computer network, a wall outlet, or a battery; Provide for Web-based retrieval and analysis of measurement data and of a file containing such ancillary data as a log of command attempts at remote units; and Use the User Datagram Protocol (UDP) for maximum performance and minimal network overhead.

  5. Patterning of conjugated polymers for organic optoelectronic devices.

    PubMed

    Xu, Youyong; Zhang, Fan; Feng, Xinliang

    2011-05-23

    Conjugated polymers have been attracting more and more attention because they possess various novel electrical, magnetical, and optical properties, which render them useful in modern organic optoelectronic devices. Due to their organic nature, conjugated polymers are light-weight and can be fabricated into flexible appliances. Significant research efforts have been devoted to developing new organic materials to make them competitive with their conventional inorganic counterparts. It is foreseeable that when large-scale industrial manufacture of the devices made from organic conjugated polymers is feasible, they would be much cheaper and have more functions. On one hand, in order to improve the performance of organic optoelectronic devices, it is essential to tune their surface morphologies by techniques such as patterning. On the other hand, patterning is the routine requirement for device processing. In this review, the recent progress in the patterning of conjugated polymers for high-performance optoelectronic devices is summarized. Patterning based on the bottom-up and top-down methods are introduced. Emerging new patterning strategies and future trends for conventional patterning techniques are discussed.

  6. Method And Apparatus For Coupling Optical Elements To Optoelectronic Devices For Manufacturing Optical Transceiver Modules

    DOEpatents

    Anderson, Gene R.; Armendariz, Marcelino G.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; Giunta, Rachel Knudsen; Mitchell, Robert T.; McCormick, Frederick B.; Peterson, David W.; Rising, Merideth A.; Reber, Cathleen A.; Reysen, Bill H.

    2005-06-14

    A process is provided for aligning and connecting at least one optical fiber to at least one optoelectronic device so as to couple light between at least one optical fiber and at least one optoelectronic device. One embodiment of this process comprises the following steps: (1) holding at least one optical element close to at least one optoelectronic device, at least one optical element having at least a first end; (2) aligning at least one optical element with at least one optoelectronic device; (3) depositing a first non-opaque material on a first end of at least one optoelectronic device; and (4) bringing the first end of at least one optical element proximate to the first end of at least one optoelectronic device in such a manner that the first non-opaque material contacts the first end of at least one optoelectronic device and the first end of at least one optical element. The optical element may be an optical fiber, and the optoelectronic device may be a vertical cavity surface emitting laser. The first non-opaque material may be a UV optical adhesive that provides an optical path and mechanical stability. In another embodiment of the alignment process, the first end of at least one optical element is brought proximate to the first end of at least one optoelectronic device in such a manner that an interstitial space exists between the first end of at least one optoelectronic device and the first end of at least one optical element.

  7. Quantum Dot Superlattice Enabled Rational Design in Optoelectronics and Hydrogen Generation

    DTIC Science & Technology

    2014-11-25

    in Optoelectronics and Hydrogen Generation 5a. CONTRACT NUMBER FA2386-13-1-4074 5b. GRANT NUMBER Grant AOARD-134074 5c. PROGRAM ELEMENT...FA2386-13-1-4074 “Quantum Dot Superlattice Enabled Rational Design in Optoelectronics and Hydrogen Generation” April 21, 2014 PI and Co-PI...impacts on optoelectronic devices, and hydrogen generation under sunlight. Introduction: Intensive research works have been made on inorganic

  8. Single-sided lateral-field and phototransistor-based optoelectronic tweezers

    NASA Technical Reports Server (NTRS)

    Ohta, Aaron (Inventor); Chiou, Pei-Yu (Inventor); Hsu, Hsan-Yin (Inventor); Jamshidi, Arash (Inventor); Wu, Ming-Chiang (Inventor); Neale, Steven L. (Inventor)

    2011-01-01

    Described herein are single-sided lateral-field optoelectronic tweezers (LOET) devices which use photosensitive electrode arrays to create optically-induced dielectrophoretic forces in an electric field that is parallel to the plane of the device. In addition, phototransistor-based optoelectronic tweezers (PhOET) devices are described that allow for optoelectronic tweezers (OET) operation in high-conductivity physiological buffer and cell culture media.

  9. Dynamic manipulation and patterning of microparticles and cells by using TiOPc-based optoelectronic dielectrophoresis.

    PubMed

    Yang, Shih-Mo; Yu, Tung-Ming; Huang, Hang-Ping; Ku, Meng-Yen; Hsu, Long; Liu, Cheng-Hsien

    2010-06-15

    We develop light-driven optoelectronic tweezers based on the organic photoconductive material titanium oxide phthalocyanine. These tweezers function based on negative dielectrophoresis (nDEP). The dynamic manipulation of a single microparticle and cell patterning are demonstrated by using this light-driven optoelectronic DEP chip. The adaptive light patterns that drive the optoelectronic DEP onchip are designed by using Flash software to approach appropriate dynamic manipulation. This is also the first reported demonstration, to the best of our knowledge, for successfully patterning such delicate cells from human hepatocellular liver carcinoma cell line HepG2 by using any optoelectronic tweezers.

  10. Optoelectronic sensor device for monitoring ethanol concentration in winemaking applications

    NASA Astrophysics Data System (ADS)

    Jiménez-Márquez, F.; Vázquez, J.; Úbeda, J.; Rodríguez-Rey, J.; Sánchez-Rojas, J. L.

    2015-05-01

    The supervision of key variables such as sugar, alcohol, released CO2 and microbiological evolution in fermenting grape must is of great importance in the winemaking industry. However, the fermentation kinetics is assessed by monitoring the evolution of the density as it varies during a fermentation, since density is an indicator of the total amount of sugars, ethanol and glycerol. Even so, supervising the fermentation process is an awkward and non-comprehensive task, especially in wine cellars where production rates are massive, and enologists usually measure the density of the extracted samples from each fermentation tank manually twice a day. This work aims at the design of a fast, low-cost, portable and reliable optoelectronic sensor for measuring ethanol concentration in fermenting grape must samples. Different sets of model solutions, which contain ethanol, fructose, glucose, glycerol dissolved in water and emulate the grape must composition at different stages of the fermentation, were prepared both for calibration and validation. The absorption characteristics of these model solutions were analyzed by a commercial spectrophotometer in the NIR region, in order to identify key wavelengths from which valuable information regarding the sample composition can be extracted. Finally, a customized optoelectronic prototype based on absorbance measurements at two wavelengths belonging to the NIR region was designed, fabricated and successfully tested. The system, whose optoelectronics is reduced after a thorough analysis to only two LED lamps and their corresponding paired photodiodes operating at 1.2 and 1.3 μm respectively, calculates the ethanol content by a multiple linear regression.

  11. Graduate studies on optoelectronics in Argentina: an experience

    NASA Astrophysics Data System (ADS)

    Fernández, Juan C.; Garea, María. T.; Isaurralde, Silvia; Perez, Liliana I.; Raffo, Carlos A.

    2014-07-01

    The number of graduate programs in Optoelectronics in Argentina is scarce. The current Optics and Photonics Education Directory lists only three programs. One of them was launched in 2001 in the Facultad de Ingeniería (College of Engineering), Universidad de Buenos Aires (UBA). This was the first graduate program in the field, leading to a Master Degree in Optoelectronics. This decision arose from the demand of telecommunications industries and several estate- or private-funded research institutions working with us in the fields of lasers, optics, remote sensing, etc. A great bonus was the steady work, during several decades, of research groups in the College on the development of different type of lasers and optical non destructive tests and their engineering applications. As happened in many engineering graduate programs in Argentina at that time, few non full-time students could finish their studies, which called for 800 hours of traditional lecture-recitation classes, and the Master Thesis. In recent years Argentine Education authorities downsized the Master programs to 700 hours of blended learning and we redesigned the Graduate Optoelectronic Engineering Program to meet the challenge, dividing it in two successive one year programs, the first aimed at a professional training for almost immediate insertion in the labor market (called Especialización en Ingeniería Optoelectrónica), and the second (called Maestría en Ingeniería Optoelectrónica y Fotónica) aimed at a more academic and research target to comply with the UBA standards for Master degrees. The present work is a presentation of the new program design, which has begun in the current year.

  12. Acousto-optic collinear filter with optoelectronic feedback

    NASA Astrophysics Data System (ADS)

    Mantsevich, S. N.; Balakshy, V. I.; Kuznetsov, Yu. I.

    2017-04-01

    A spectral optoelectronic system combining a collinear acousto-optic cell fabricated of calcium molybdate single crystal and a positive electronic feedback is proposed first and examined theoretically and experimentally. The feedback signal is formed at the cell output due to the optical heterodyning effect with the use of an unconventional regime of cell operation. It is shown that the feedback enables controlling spectral characteristics of the acousto-optic cell, resulting in enhancing the spectral resolution and the accuracy of optical wavelength determination. In the experiment, maximal filter passband narrowing was as great as 37 times.

  13. Quantum dot rolled-up microtube optoelectronic integrated circuit.

    PubMed

    Bhowmick, Sishir; Frost, Thomas; Bhattacharya, Pallab

    2013-05-15

    A rolled-up microtube optoelectronic integrated circuit operating as a phototransceiver is demonstrated. The microtube is made of a InGaAs/GaAs strained bilayer with InAs self-organized quantum dots inserted in the GaAs layer. The phototransceiver consists of an optically pumped microtube laser and a microtube photoconductive detector connected by an a-Si/SiO2 waveguide. The loss in the waveguide and responsivity of the entire phototransceiver circuit are 7.96 dB/cm and 34 mA/W, respectively.

  14. Optoelectronic set for measuring reflectance spectrum of living human skin

    NASA Astrophysics Data System (ADS)

    Gryko, Lukasz; Zajac, Andrzej; Gilewski, Marian; Kulesza, Ewa

    2015-09-01

    In the paper the authors present the developed optoelectronic set for measuring spectral reflectance of living human skin. The basic elements of the set are: the illuminator consists of the LED illuminator emitting a uniform distribution of spectral irradiance in the exposed field, the semispherical measuring chamber and the spectrometer which measures spectrum of reflected radiation. Measured radiation is from spectral range of tissue optical window (from 600 nm to 1000 nm). Knowledge about the reflectance spectrum of the patient skin allows adjusting spectral and energetic parameters of the radiation used in biostimulation treatment. The developed set also enables the repeatable exposures of patients in the Low Level Laser Therapy procedures.

  15. Electronic and optoelectronic nano-devices based on carbon nanotubes.

    PubMed

    Scarselli, M; Castrucci, P; De Crescenzi, M

    2012-08-08

    The discovery and understanding of nanoscale phenomena and the assembly of nanostructures into different devices are among the most promising fields of material science research. In this scenario, carbon nanostructures have a special role since, in having only one chemical element, they allow physical properties to be calculated with high precision for comparison with experiment. Carbon nanostructures, and carbon nanotubes (CNTs) in particular, have such remarkable electronic and structural properties that they are used as active building blocks for a large variety of nanoscale devices. We review here the latest advances in research involving carbon nanotubes as active components in electronic and optoelectronic nano-devices. Opportunities for future research are also identified.

  16. Multiple fluorescence microscopy and optoelectronic imaging: possibilities and limits

    NASA Astrophysics Data System (ADS)

    Gundlach, Heinz

    1997-12-01

    The last 20 years have seen an unexpected great renaissance and a partial revolution in light microscopy. This recent progress is due to new design in optics and instrumentation as well as improvement of optical contrast enhancement techniques. Recent progress in fluorescence microscopy is achieved by multiparameter fluorescence techniques, by improvement of conventional photomicrography as well as by optoelectronic imaging, confocal laser scanning microscopy, image processing and analysis. Due to the increase in number of fluorescence dyes, double and triple bandpass filter sets permit a rapid changeover between different fluorochromes simultaneously.

  17. All-optoelectronic continuous wave THz imaging for biomedical applications.

    PubMed

    Siebert, Karsten J; Löffler, Torsten; Quast, Holger; Thomson, Mark; Bauer, Tobias; Leonhardt, Rainer; Czasch, Stephanie; Roskos, Hartmut G

    2002-11-07

    We present an all-optoelectronic THz imaging system for ex vivo biomedical applications based on photomixing of two continuous-wave laser beams using photoconductive antennas. The application of hyperboloidal lenses is discussed. They allow for f-numbers less than 1/2 permitting better focusing and higher spatial resolution compared to off-axis paraboloidal mirrors whose f-numbers for practical reasons must be larger than 1/2. For a specific histological sample, an analysis of image noise is discussed.

  18. All-optoelectronic continuous-wave terahertz systems.

    PubMed

    Löffler, Torsten; Siebert, Karsten J; Quast, Holger; Hasegawa, Noburu; Loata, Gabriel; Wipf, Robert; Hahn, Tobias; Thomson, Mark; Leonhardt, Rainer; Roskos, Hartmut G

    2004-02-15

    We discuss the optoelectronic generation and detection of continuous-wave terahertz (THz) radiation by the mixing of visible/near-infrared laser radiation in photoconductive antennas. We review attempts to reach higher THz output-power levels by reverting from mobility-lifetime-limited photomixers to transit-time-limited p-i-n photodiodes. We then describe our implementation of a THz spectroscopy and imaging-measurement system and demonstrate its imaging performance with several examples. Possible application areas of THz imaging in the biomedical field and in surface characterization for industrial purposes are explored.

  19. Antenna-enhanced optoelectronic probing of carbon nanotubes.

    PubMed

    Mauser, Nina; Hartmann, Nicolai; Hofmann, Matthias S; Janik, Julia; Högele, Alexander; Hartschuh, Achim

    2014-07-09

    We report on the first antenna-enhanced optoelectronic microscopy studies on nanoscale devices. By coupling the emission and excitation to a scanning optical antenna, we are able to locally enhance the electroluminescence and photocurrent along a carbon nanotube device. We show that the emission source of the electroluminescence can be pointlike with a spatial extension below 20 nm. Topographic and antenna-enhanced photocurrent measurements reveal that the emission takes place at the location of highest local electric field indicating that the mechanism behind the emission is the radiative decay of excitons created via impact excitation.

  20. Conjugated polymers and their use in optoelectronic devices

    SciTech Connect

    Marks, Tobin J.; Guo, Xugang; Zhou, Nanjia; Chang, Robert P. H.; Drees, Martin; Facchetti, Antonio

    2016-10-18

    The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.

  1. a 9-BIT, Pipelined Gallium Arsenide Analog-Digital Converter

    NASA Astrophysics Data System (ADS)

    Breevoort, Cornelius Marius

    1992-01-01

    Excellent Short Take-Off and Landing (STOL) performance is achieved by Upper Surface Blowing (USB) aircraft as a result of mounting high by-pass turbofan engines over the forward part of the wing. High lift levels are generated by directing the engine exhaust over the wing upper surface to entrain additional airflow and by using the Coanda effect to turn the exhaust flow downward over a large radius "Coanda" flap. Commercial application of USB technology could reduce airport congestion and community noise if future configurations can be designed with economically acceptable cruise drag levels. An experimental investigation of the high speed aerodynamics of USB aircraft configurations has been conducted to accurately define the magnitude and causes of the powered configuration cruise drag. A highly instrumented wind tunnel model of a realistic USB configuration has been used which permitted parametric variations in the number and spanwise location of the nacelles and accurately modeled the engine power effects with turbofan propulsion simulators. The measured force data provides an accurate definition of the cruise drag penalty associated with each configuration and the constructed pressure contour plots provide detailed insight into their causes. It was found that the high speed aerodynamics of USB configurations is a complex interaction of jet induced and wing transonic flowfields. The presence of the nacelles on the wing upper surface created a severe drag penalty which increased with freestream Mach number, power setting and angle of attack. The more widely spaced two nacelle configurations exhibited improved flowfields at moderate Mach numbers but suffered from drag levels comparable to the baseline configuration for high speed cruise conditions. At high Mach numbers and power settings, all of the tested configurations displayed strong shocks and separated zones in the wing/nacelle junction regions. Detailed discussions of the causes of the cruise drag penalty and recommended future design improvements are presented.

  2. Analog approach to mixed analog-digital circuit simulation

    NASA Astrophysics Data System (ADS)

    Ogrodzki, Jan

    2013-10-01

    Logic simulation of digital circuits is a well explored research area. Most up-to-date CAD tools for digital circuits simulation use an event driven, selective trace algorithm and Hardware Description Languages (HDL), e.g. the VHDL. This techniques enable simulation of mixed circuits, as well, where an analog part is connected to the digital one through D/A and A/D converters. The event-driven mixed simulation applies a unified, digital-circuits dedicated method to both digital and analog subsystems. In recent years HDL techniques have been also applied to mixed domains, as e.g. in the VHDL-AMS. This paper presents an approach dual to the event-driven one, where an analog part together with a digital one and with converters is treated as the analog subsystem and is simulated by means of circuit simulation techniques. In our problem an analog solver used yields some numerical problems caused by nonlinearities of digital elements. Efficient methods for overriding these difficulties have been proposed.

  3. Larger bases and mixed analog/digital neural nets

    SciTech Connect

    Beiu, V.

    1998-12-31

    The paper overviews results dealing with the approximation capabilities of neural networks, and bounds on the size of threshold gate circuits. Based on an explicit numerical algorithm for Kolmogorov`s superpositions the authors show that minimum size neural networks--for implementing any Boolean function--have the identity function as the activation function. Conclusions and several comments on the required precision are ending the paper.

  4. Photonics and optoelectronics of two-dimensional materials beyond graphene

    NASA Astrophysics Data System (ADS)

    Ponraj, Joice Sophia; Xu, Zai-Quan; Chander Dhanabalan, Sathish; Mu, Haoran; Wang, Yusheng; Yuan, Jian; Li, Pengfei; Thakur, Siddharatha; Ashrafi, Mursal; Mccoubrey, Kenneth; Zhang, Yupeng; Li, Shaojuan; Zhang, Han; Bao, Qiaoliang

    2016-11-01

    Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.

  5. Laser applications in the electronics and optoelectronics industry in Japan

    NASA Astrophysics Data System (ADS)

    Washio, Kunihiko

    1999-07-01

    This paper explains current status and technological trends in laser materials processing applications in electronics and optoelectronics industry in Japan. Various laser equipment based on solid state lasers or gas lasers such as excimer lasers or CO2 lasers has been developed and applied in manufacturing electronic and optoelectronic devices to meet the strong demands for advanced device manufacturing technologies for high-performance, lightweight, low power-consumption portable digital electronic appliances, cellular mobile phones, personal computers, etc. Representative applications of solid-state lasers are, opaque and clear defects repairing of photomasks for LSIs and LCDs, trimming of thick-film chip resistors and low resistance metal resistors, laser cutting and drilling of thin films for high-pin count semiconductor CSP packages, laser patterning of thin-film amorphous silicon solar cells, and laser welding of electronic components such as hard-disk head suspensions, optical modules, miniature relays and lithium ion batteries. Compact and highly efficient diode- pumped and Q-switched solid-state lasers in second or third harmonic operation mode are now being increasingly incorporated in various laser equipment for fine material processing. Representative applications of excimer lasers are, sub-quarter micron design-rule LSI lithography and low- temperature annealing of poly-silicon TFT LCD.

  6. Impact of optical antennas on active optoelectronic devices.

    PubMed

    Bonakdar, Alireza; Mohseni, Hooman

    2014-10-07

    Remarkable progress has been made in the fabrication and characterization of optical antennas that are integrated with optoelectronic devices. Herein, we describe the fundamental reasons for and experimental evidence of the dramatic improvements that can be achieved by enhancing the light-matter interaction via an optical antenna in both photon-emitting and -detecting devices. In addition, integration of optical antennas with optoelectronic devices can lead to the realization of highly compact multifunctional platforms for future integrated photonics, such as low-cost lab-on-chip systems. In this review paper, we further focus on the effect of optical antennas on the detectivity of infrared photodetectors. One particular finding is that the antenna can have a dual effect on the specific detectivity, while it can elevate light absorption efficiency of sub-wavelength detectors, it can potentially increase the noise of the detectors due to the enhanced spontaneous emission rate. In particular, we predict that the detectivity of interband photon detectors can be negatively affected by the presence of optical antennas across a wide wavelength region covering visible to long wavelength infrared bands. In contrast, the detectivity of intersubband detectors could be generally improved with a properly designed optical antenna.

  7. Laser hyperdoping silicon for enhanced infrared optoelectronic properties

    NASA Astrophysics Data System (ADS)

    Warrender, Jeffrey M.

    2016-09-01

    Pulsed laser melting and rapid solidification have attracted interest for decades as a method to achieve impurity concentrations in silicon orders of magnitude above the equilibrium solubility limit. The incorporation of sulfur into silicon using this technique led to the observation of strong broadband infrared absorption in the resulting material. This observation, combined with interest in impurity band optoelectronic device concepts, has resulted in renewed interest in laser techniques for achieving high impurity concentrations. In this paper, I review the literature that led to the present understanding of laser hyperdoping and provide a summary of the optical and optoelectronic measurements made on sulfur hyperdoped silicon to date. I mention recent work exploring transition metal impurities and discuss how considerations discovered in early solidification and later rapid solidification work inform our approaches to kinetically trapping such impurities. I also provide a simplified picture of how a laser hyperdoping process is typically carried out, as an entry point for an experimentalist seeking to fabricate such layers.

  8. Nanoengineered quantum dot medium for space optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Oktyabrsky, S.; Tokranov, V.; Yakimov, M.; Sergeev, A.; Mitin, V.

    2012-10-01

    Resistance to temperature and ionizing radiation of space optoelectronic devices can be improved through control of carrier kinetics in nanoscale systems. Recent results in the science and technology of self-assembled heteroepitaxial InAs quantum dot (QD) medium related to photonic applications are discussed. Focus is placed on management of carrier kinetics via nanoengineering of electronic spectrum and potential profiles in the QD ensemble using modeling and controlled fabrication of QDs with molecular beam epitaxy. Shape-engineered QD sheets embedded into GaAs quantum wells were found to withstand two orders of magnitude higher proton dose than QWs and to account for high luminescence efficiency and thermally stable laser diodes. Built-in charge in QDs is responsible for improvement of both near and mid-IR optical absorption, but also control photoelectron lifetime in the structures. The negatively charged QD medium was the first QD material that has recently shown credible improvement of solar cell efficiency. It has resulted from IR energy harvesting and suppressed fast electron capture processes. It is thus expected that QD InAs/GaAs photovoltaics will overcome the efficiency and lifespan of multi-junction solar cells. Potentials due to QD built-in charge are also responsible for improved photoelectron lifetime in QD infrared photodetectors. QD correlated clusters provide even higher collective potential barriers around clusters and constitute the novel approach to the optoelectronic materials combining manageable photoelectron lifetime, high mobility, and tunable localized and conducting states.

  9. Growing perovskite into polymers for easy-processable optoelectronic devices

    PubMed Central

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition. PMID:25579988

  10. Prediction of Silicon-Based Layered Structures for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Luo, Wei; Ma, Yanming; Gong, Xingao; Xiang, Hongjun; CCMG Team

    2015-03-01

    A method based on the particle swarm optimization (PSO) algorithm is presented to design quasi-two-dimensional (Q2D) materials. With this development, various single-layer and bi-layer materials in C, Si, Ge, Sn, and Pb were predicted. A new Si bi-layer structure is found to have a much-favored energy than the previously widely accepted configuration. Both single-layer and bi-layer Si materials have small band gaps, limiting their usages in optoelectronic applications. Hydrogenation has therefore been used to tune the electronic and optical properties of Si layers. We discover two hydrogenated materials of layered Si8H2andSi6H2 possessing quasi-direct band gaps of 0.75 eV and 1.59 eV, respectively. Their potential applications for light emitting diode and photovoltaics are proposed and discussed. Our study opened up the possibility of hydrogenated Si layered materials as next-generation optoelectronic devices.

  11. Growing perovskite into polymers for easy-processable optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

  12. A hemispherical electronic eye camera based on compressible silicon optoelectronics.

    PubMed

    Ko, Heung Cho; Stoykovich, Mark P; Song, Jizhou; Malyarchuk, Viktor; Choi, Won Mook; Yu, Chang-Jae; Geddes, Joseph B; Xiao, Jianliang; Wang, Shuodao; Huang, Yonggang; Rogers, John A

    2008-08-07

    The human eye is a remarkable imaging device, with many attractive design features. Prominent among these is a hemispherical detector geometry, similar to that found in many other biological systems, that enables a wide field of view and low aberrations with simple, few-component imaging optics. This type of configuration is extremely difficult to achieve using established optoelectronics technologies, owing to the intrinsically planar nature of the patterning, deposition, etching, materials growth and doping methods that exist for fabricating such systems. Here we report strategies that avoid these limitations, and implement them to yield high-performance, hemispherical electronic eye cameras based on single-crystalline silicon. The approach uses wafer-scale optoelectronics formed in unusual, two-dimensionally compressible configurations and elastomeric transfer elements capable of transforming the planar layouts in which the systems are initially fabricated into hemispherical geometries for their final implementation. In a general sense, these methods, taken together with our theoretical analyses of their associated mechanics, provide practical routes for integrating well-developed planar device technologies onto the surfaces of complex curvilinear objects, suitable for diverse applications that cannot be addressed by conventional means.

  13. Optoelectronic scanning system upgrade by energy center localization methods

    NASA Astrophysics Data System (ADS)

    Flores-Fuentes, W.; Sergiyenko, O.; Rodriguez-Quiñonez, J. C.; Rivas-López, M.; Hernández-Balbuena, D.; Básaca-Preciado, L. C.; Lindner, L.; González-Navarro, F. F.

    2016-11-01

    A problem of upgrading an optoelectronic scanning system with digital post-processing of the signal based on adequate methods of energy center localization is considered. An improved dynamic triangulation analysis technique is proposed by an example of industrial infrastructure damage detection. A modification of our previously published method aimed at searching for the energy center of an optoelectronic signal is described. Application of the artificial intelligence algorithm of compensation for the error of determining the angular coordinate in calculating the spatial coordinate through dynamic triangulation is demonstrated. Five energy center localization methods are developed and tested to select the best method. After implementation of these methods, digital compensation for the measurement error, and statistical data analysis, a non-parametric behavior of the data is identified. The Wilcoxon signed rank test is applied to improve the result further. For optical scanning systems, it is necessary to detect a light emitter mounted on the infrastructure being investigated to calculate its spatial coordinate by the energy center localization method.

  14. Picosecond photoconductive devices for 10 Gbit/s optoelectronic switching

    NASA Astrophysics Data System (ADS)

    Veith, G.

    1985-03-01

    Semiconductor materials with a high density of recombination and trapping centers exhibit extremely short carrier lifetimes in the order of 1 to 100 ps and have been the base for the development of high speed optoelectronic switches. These devices are activated by picosecond laser pulses and can be driven nearly free of jitter with respect to the optical excitation pulses. They show some unique properties as picosecond risetimes and response times and can be operated within a relatively high dynamical range (10-5 to 10 sub 4 V) (0.00001 to 0.0001 V). A review is given on the wide field of possible applications of the ultrafast photoconductive switches. They can be used as photodetectors for picosecond light pulses as well as sampling gates for the characterization of high speed electronic and optoelectronic devices. In some experiments which are discussed more in detail the author demonstrates the capability of this type of photoconductive switches for the generation of picosecond infrared pulse trains in laser diodes and for the generation of high-bit rate electrical codes for use in Gbit/s optical communication and sensing systems, for logical switching and for testing purposes of high speed electronic instrumentations.

  15. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOEpatents

    Shtein, Max; Yang, Fan; Forrest, Stephen R.

    2008-09-02

    A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.

  16. Wafer level optoelectronic device packaging using MEMS (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Nallani, Arunkumar; Chen, Ting; Lee, J.-B.; Hayes, Donald; Wallace, David

    2005-07-01

    The emergence of vertical cavity surface emitting laser (VCSEL) and photo diode (PD) arrays has given scope for the development of many applications such as high speed data communication. Further increase in performance can be obtained by the inclusion of micro-mirrors and microlens in the optical path between these components. However, the lack of efficient assembly and alignment techniques has become bottlenecks for new products. In this paper, we present development of optical sub-assembly and metallic MEMS structures that enable in the massively parallel assembly and alignment of these components to form a single miniature package. VCSEL wafer was processed to have polymer pedestal and polymeric lens on top of it. Such optical sub assembly greatly increases coupling efficiency between the VCSEL and optical fibers. Multiple numbers of suspended MEMS serpentine springs made out of electroplated nickel have been fabricated on ceramic substrates. These springs serve for clamping and alignment of multiple numbers of optoelectronic components. They are designed to be self-aligning with alignment accuracies of less than 3 micron after final assembly. Electrical connection between the bond pads of VCSEL's and PD's to the electrical leads on the substrate has been demonstrated by molten solder inkjet printing into precisely designed MEMS mold structures. This novel massively parallel assembly process is substrate independent and relatively simple process. This technique will provide reliable assembly of optoelectronic components and miniature optical systems in low cost mass production manner.

  17. Light-sensing ambipolar organic transistors for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Anthopoulos, Thomas D.; Wöbkenberg, Paul H.; Bradley, Donal D. C.

    2008-04-01

    Since their invention use of organic field-effect transistors (OFETs) has been restricted to applications that explore their unifunctional, i.e. current switching, characteristics. Recently, however, OFETs with additional functionalities have been designed and demonstrated with most notable examples the light-emitting (LE-OFET) [1] and light-sensing (LS-OFET) [2] transistors. These devices are of particular significance since design and fabrication of a new type of organic circuits can now be envisioned. Here we report on electro-optical circuits based on ambipolar LS-OFETs and unipolar OFETs. By carefully tuning the ambipolar transport of LS-OFETs their photosensitivity can be controlled and optimised. By going a step further and integrating LS-OFETs with unipolar OFETs we are able to demonstrate various optoelectronic circuits including electro-optical switches and logic gates. A unique characteristic of these gates is that their input signal(s) can be designed to be either all-optical or electro-optical. An additional advantage of the technology is that LS-OFETs can be integrated with the driving electronics using the same number of processing steps, hence eliminating the need of additional fabrication costs. This is one of the first demonstrations of organic circuits where signal processing involves the use of both optical and electrical input signals. Such optoelectronic devices/circuits could one day be explored in various applications including electro-optical transceivers and optical sensor arrays.

  18. Rapidly and continuously frequency-scanning opto-electronic oscillator.

    PubMed

    Cen, Qizhuang; Dai, Yitang; Yin, Feifei; Zhou, Yue; Li, Jianqiang; Dai, Jian; Yu, Lan; Xu, Kun

    2017-01-23

    An opto-electronic oscillator (OEO) scheme which operates at "chirp oscillation" mode and generates low-phase-noise, frequency-swept microwave is proposed and experimentally demonstrated. This frequency-swept OEO is achieved by embedding a rapidly frequency-scanning microwave filter in an opto-electronic cavity. The filter has fixed passband while its center frequency scans rapidly and periodically at cavity round-trip time, covering a large frequency range (~GHz). Experimentally, the generated frequency-swept microwave is linear frequency-modulated continuous wave (FMCW) which centers at 7 GHz with 1-GHz bandwidth. Its instantaneous frequency varies linearly from 6.5 GHz to 7.5 GHz, back and forth, in a period of 12.8 μs, resulting in a frequency scanning rate of ~156 MHz/μs. The single-side-band (SSB) noise of the generated FMCW is -104 dBc/Hz at 10 kHz offset frequency, which is much lower than that from a commercial electronic arbitrary waveform generator (E-AWG). Improvement as large as 23 dB is experimentally reported.

  19. Optoelectronic leak detection system for monitoring subsea structures

    NASA Astrophysics Data System (ADS)

    Moodie, D.,; Costello, L.; McStay, D.

    2010-04-01

    Leak detection and monitoring on subsea structures is an area of increasing interest for the detection and monitoring of production and control fluids for the oil and gas industry. Current techniques such as capacitive (dielectric) based measurement or passive acoustic systems have limitations and we report here an optoelectronic solution based upon fluorescence spectroscopy to provide a permanent monitoring solution. We report here a new class of optoelectronic subsea sensor for permanent, real time monitoring of hydrocarbon production systems. The system is capable of detecting small leaks of production or hydraulic fluid (ppm levels) over distances of 4-5 meters in a subsea environment. Ideally systems designed for such applications should be capable of working at depths of up to 3000m unattended for periods of 20+ years. The system uses advanced single emitter LED technology to meet the challenges of lifetime, power consumption, spatial coverage and delivery of a cost effective solution. The system is designed for permanent deployment on Christmas tree (XT), subsea processing systems (SPS) and associated equipment to provide enhanced leak detection capability.

  20. Photonics and optoelectronics of two-dimensional materials beyond graphene.

    PubMed

    Ponraj, Joice Sophia; Xu, Zai-Quan; Dhanabalan, Sathish Chander; Mu, Haoran; Wang, Yusheng; Yuan, Jian; Li, Pengfei; Thakur, Siddharatha; Ashrafi, Mursal; Mccoubrey, Kenneth; Zhang, Yupeng; Li, Shaojuan; Zhang, Han; Bao, Qiaoliang

    2016-11-18

    Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.

  1. Nonplanar push-pull chromophores for opto-electronic applications.

    PubMed

    Breiten, Benjamin; Biaggio, Ivan; Diederich, François

    2010-01-01

    Donor-substituted cyanoethynylethenes (CEEs) are planar push-pull chromophores featuring intense intramolecular charge-transfer (CT) interactions and high third-order optical nonlinearities. Their thermal stability allows for the formation of crystalline thin films by vapor-phase deposition. On the other hand, high-quality amorphous thin films are preferred for opto-electronic applications and such films can be prepared using nonplanar push-pull chromophores with a less pronounced propensity to crystallize. By taking advantage of a versatile, atom-economic 'click-chemistry'-type transformation, involving a formal [2 + 2] cycloaddition of tetracyanoethene (TCNE) to electron-rich alkynes, followed by cycloreversion, stable donor-substituted 1,1,4,4-tetracyanobuta-1,3-dienes (TCBDs) are obtained in high yield and large quantities. These nonplanar push-pull chromophores also feature intense intramolecular CT and, in many cases, high third-order optical nonlinearities. Some of these compounds form high-optical-quality amorphous thin films by vapor-phase deposition, and first applications in next-generation opto-electronic devices have already been demonstrated. Chiral derivatives display high helical twisting power and are efficient dopants to translate molecular into macroscopic chirality, by switching nematic into cholesteric liquid crystalline phases.

  2. 75 FR 41891 - In the Matter of Certain Optoelectronic Devices, Components Thereof, and Products Containing the...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-19

    ... COMMISSION In the Matter of Certain Optoelectronic Devices, Components Thereof, and Products Containing the... devices, components thereof, or products containing the same by reason of infringement of certain claims... optoelectronic devices, components thereof, and products containing the same that are covered by one or more...

  3. Optoelectronic method for detection of cervical intraepithelial neoplasia and cervical cancer

    NASA Astrophysics Data System (ADS)

    Pruski, D.; Przybylski, M.; Kędzia, W.; Kędzia, H.; Jagielska-Pruska, J.; Spaczyński, M.

    2011-12-01

    The optoelectronic method is one of the most promising concepts of biophysical program of the diagnostics of CIN and cervical cancer. Objectives of the work are evaluation of sensitivity and specificity of the optoelectronic method in the detection of CIN and cervical cancer. The paper shows correlation between the pNOR number and sensitivity/specificity of the optoelectronic method. The study included 293 patients with abnormal cervical cytology result and the following examinations: examination with the use of the optoelectronic method — Truscreen, colposcopic examination, and histopathologic biopsy. Specificity of the optoelectronic method for LGSIL was estimated at 65.70%, for HGSIL and squamous cell carcinoma of cervix amounted to 90.38%. Specificity of the optoelectronic method used to confirm lack of cervical pathology was estimated at 78.89%. The field under the ROC curve for the optoelectronic method was estimated at 0.88 (95% CI, 0.84-0.92) which shows high diagnostic value of the test in the detection of HGSIL and squamous cell carcinoma. The optoelectronic method is characterised by high usefulness in the detection of CIN, present in the squamous epithelium and squamous cell carcinoma of cervix.

  4. Growth and characterization of silicon-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Filios, Adam A.

    Photonics, a blending of optics and electronics, has emerged as one of the world's most rapidly developing fields. Along with microelectronics, they constitute the core technologies of the information industry, and their advances are complementing each other in the tasks of the acquisition, transmission, storage, and processing of increasing amounts of information. Microelectronic device integration has progressed to the point that complete "systems-on-the-chip" have been realized. Photonic materials need to be integrated with standard electronic circuits for the implementation of the next generation optoelectronic "super-chip" where both electrons and photons participate in the transmission and processing of information. Silicon is the cornerstone material in conventional VLSI systems. However, having a relatively small and indirect fundamental energy band-gap, silicon is an inefficient lightemitter. On the other hand, direct integration of III-V photonic materials on a silicon chip is still very problematic. Squeezing light out of silicon itself appears to be an attractive alternative. Light emission from silicon is an important fundamental issue with enormous technological implications. In this work we explore several strategies towards developing silicon based optoelectronic devices. Porous silicon, a material produced by electrochemically etching silicon in aqueous hydrofluoric acid solutions, generated great interest in the early 1990s when it was shown to exhibit relatively bright, room temperature, visible photoluminescence. However, having a poor surface morphology, the material is fragile and chemically unstable leading to degradation of light emission and preventing integration with silicon processing technology. With the development of the epitaxially grown crystalline-Si/O superlattice, we attempt to overcome the morphological problems of porous silicon, retaining its light emission characteristics. Our multilayer c-Si/O device consists of thin silicon

  5. A Long-Term View on Perovskite Optoelectronics.

    PubMed

    Docampo, Pablo; Bein, Thomas

    2016-02-16

    Recently, metal halide perovskite materials have become an exciting topic of research for scientists of a wide variety of backgrounds. Perovskites have found application in many fields, starting from photovoltaics and now also making an impact in light-emitting applications. This new class of materials has proven so interesting since it can be easily solution processed while exhibiting materials properties approaching the best inorganic optoelectronic materials such as GaAs and Si. In photovoltaics, in only 3 years, efficiencies have rapidly increased from an initial value of 3.8% to over 20% in recent reports for the commonly employed methylammonium lead iodide (MAPI) perovskite. The first light emitting diodes and light-emitting electrochemical cells have been developed already exhibiting internal quantum efficiencies exceeding 15% for the former and tunable light emission spectra. Despite their processing advantages, perovskite optoelectronic materials suffer from several drawbacks that need to be overcome before the technology becomes industrially relevant and hence achieve long-term application. Chief among these are the sensitivity of the structure toward moisture and crystal phase transitions in the device operation regime, unreliable device performance dictated by the operation history of the device, that is, hysteresis, the inherent toxicity of the structure, and the high cost of the employed charge selective contacts. In this Account, we highlight recent advances toward the long-term viability of perovskite photovoltaics. We identify material decomposition routes and suggest strategies to prevent damage to the structure. In particular, we focus on the effect of moisture upon the structure and stabilization of the material to avoid phase transitions in the solar cell operating range. Furthermore, we show strategies to achieve low-cost chemistries for the development of hole transporters for perovskite solar cells, necessary to be able to compete with other

  6. Opto-Electronic Oscillator Stabilized By A Hyperfine Atomic Transition

    NASA Technical Reports Server (NTRS)

    Strekalov, Dmitry; Aveline, David; Matsko, Andrey B.; Thompson, Robert; Yu, Nan

    2004-01-01

    Opto-electronic oscillator (OEO) is a closed-loop system with part of the loop is implemented by an optical beam, and the rest by RF circuitry. The technological advantage of this approach over traditional all-RF loops in the gigahertz range comes from the that frequency filtering can be done far more efficiently in the optical range with compact, low power, and have superior stability. In this work, we report our preliminary results on using the phenomenon of coherent population trapping in (87) Rb vapor as an optical filter. Such a filter allows us to stabilize the OEO at the hyperfine splitting frequency of rubidium, thus implementing a novel type of frequency standard.

  7. A nonlinear optoelectronic filter for electronic signal processing.

    PubMed

    Loh, William; Yegnanarayanan, Siva; Ram, Rajeev J; Juodawlkis, Paul W

    2014-01-09

    The conversion of electrical signals into modulated optical waves and back into electrical signals provides the capacity for low-loss radio-frequency (RF) signal transfer over optical fiber. Here, we show that the unique properties of this microwave-photonic link also enable the manipulation of RF signals beyond what is possible in conventional systems. We achieve these capabilities by realizing a novel nonlinear filter, which acts to suppress a stronger RF signal in the presence of a weaker signal independent of their separation in frequency. Using this filter, we demonstrate a relative suppression of 56 dB for a stronger signal having a 1-GHz center frequency, uncovering the presence of otherwise undetectable weaker signals located as close as 3.5 Hz away. The capabilities of the optoelectronic filter break the conventional limits of signal detection, opening up new possibilities for radar and communication systems, and for the field of precision frequency metrology.

  8. Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

    PubMed

    Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

    2016-11-15

    Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

  9. Laser micromachining of thin films for optoelectronic devices and packages

    NASA Astrophysics Data System (ADS)

    Moore, David F.; Williams, John A.; Hopcroft, Matthew A.; Boyle, Billy; He, Johnny H.; Syms, Richard R. A.

    2003-04-01

    Focused laser micromachining in an optical microscope system is used to prototype packages for optoelectronic devices and to investigate new materials with potential applications in packaging. Micromachined thin fims are proposed as mechanical components to locate fibers and other optical and electrical components on opto-assemblies. This paper reports prototype structures which are micromachined in silicon carbide to produce beams 5 μm thick by (1) laser cutting a track in a SiC coated Si wafer, (2) undercutting by anisotropic silicon etching using KOH in water, and (3) trimming if necessary with the laser system. This approach has the advantage of fast turn around and proof of concept. Mechanical test data are obtained from the prototype SiC beam package structures by testing with a stylus profilometer. The Youngs modulus obtained for chemical vapor deposited silicon carbide is 360 +/- 50 GPa indicating that it is a promising material for packaging applications.

  10. An optoelectronic connectionist machine utilizing liquid crystal spatial light modulators

    SciTech Connect

    Bigner, J.; Zhang, L.; Cotter, L.K.; Johnson, K.M.

    1988-09-01

    The significant feature of neural-like networks is their highly interconnected architectures. In principle, optical implementations of these networks have an advantage over electronics because they can exploit a third dimension for interconnecting processing elements. Experimental demonstrations of optical neurocomputers include those using planar and volume and spatial light modulators. The former has the advantage of implementing large sized networks, but with much less control over the value of individual connection weights as compared to spatial light modulator based systems. In this paper the authors present experimental results on a liquid crystal spatial light modulator (SLM) based neural-like netowrk. This optoelectronic network, as shown schematically in figure 1, uses liquid crystal SLM's for the input and connection weight matricies. The system is interfaced with a computer to provide electronic feedback and control of the individual weights.

  11. Opto-electronic transport properties of graphene oxide based devices

    SciTech Connect

    Das, Poulomi; Ibrahim, Sk; Pal, Tanusri; Chakraborty, Koushik; Ghosh, Surajit

    2015-06-24

    Large area, solution-processed, graphene oxide (GO)nanocomposite based photo FET has been successfully fabricated. The device exhibits p-type charge transport characteristics in dark condition. Our measurements indicate that the transport characteristics are gate dependent and extremely sensitive to solar light. Photo current decay mechanism of GO is well explained and is associated with two phenomena: a) fast response process and b) slow response process. Slow response photo decay can be considered as the intrinsic phenomena which are present for both GO and reduced GO (r-GO), whereas the first response photo decay is controlled by the surface defect states. Demonstration of photo FET performance of GO thin film is a significant step forward in integrating these devices in various optoelectronic circuits.

  12. Spatially resolved optoelectronic characterization of perovskite lead iodide nanostructures

    NASA Astrophysics Data System (ADS)

    Xiao, Rui; Peng, Xingyu; Hou, Yasen; Yu, Dong

    The high power conversion efficiency of organo-lead halide perovskite-based solar cells has attracted world-wide attention over the past few years. The high efficiency was believed to originate from the unusual properties including long carrier lifetimes and consequent long carrier diffusion lengths in these materials. Ion drift, ferroelectricity, and charge traps have been proposed to account for the efficient charge separation and photocurrent hysteresis. However, it remains unclear which mechanism is dominating. We fabricate field effect transistors (FETs) incorporating single nanoplates/nanowires of organic perovskite and perform scanning photocurrent microscopic (SPCM) measurements to extract carrier diffusion lengths as a function of gate voltage, source-drain bias. Spatially resolved optoelectronic investigations of single crystalline perovskite nanostructures provide valuable information and key evidence on distinguishing the dominating charge transport/separation mechanism.

  13. Analog optoelectronic independent component analysis for radio frequency signals

    NASA Astrophysics Data System (ADS)

    Baylor, Martha-Elizabeth

    This thesis addresses the problem of blind source separation of signals at radio frequencies. Independent component analysis (ICA), which includes a second-order decorrelation followed by a fourth-order decorrelation, uses signal independence to estimate the original signals from the received mixtures. Until now, ICA has been applied to many applications at or below audio frequencies. The work presented here demonstrates that an optoelectronic implementation using the parallel processing nature of dynamic holography can overcome the computational difficulties associated with algorithmic implementations of ICA. The holographic nature of a photorefractive crystal combined with the non-linearity of an electro-optic modulator in a feedback loop can be described by a nonlinear dynamical equation. The dynamics can be cast in the form of Lotka-Volterra equations used to study the dynamics of competing populations of species. Although this analogy with the animal world is interesting, the dynamical equation associated with the fourth-order decorrelation system is fascinating. The statistics associated with the original signals, rather than an external potential, determine the dynamics of the system. In particular, the system is multistable, metastable, or monostable depending on whether the probability density functions of the original signals are sub-Gaussian, Gaussian, or super-Gaussian, respectively. The multistable solution, which occurs for sub-Gaussian signals, provides the winner-takes-all behavior required to separate signals. This ability to separate sub-Gaussian signals is advantageous since signals modulated on a sinusoidal carrier are sub-Gaussian. The fourth-order decorrelation system achieves greater than 40 dB signal separation on 200 MHz single-frequency sine waves and greater than 20 dB signal separation for 10 MHz bandwidth signals. The system performance is degraded by 10 to 20 dB when mixed electronically due to imperfections in the mixing circuitry

  14. Exceptional Optoelectronic Properties of Si-related compounds

    NASA Astrophysics Data System (ADS)

    Huang, Bing; Zhuang, Houlong; Yoon, Mina; Wei, Su-Huai; Sumpter, Bobby

    2015-03-01

    The search of new silicon-related functional compounds are of great interests but still very changeling. In the last few decades, researchers have heavily studied the structural and electronic properties of silicon in order to improve its optical absorption in the visible light range using analyses of metastable silicon phases, silicon-based alloys, and silicon-based superlattices. In this talk, I will present our recent theoretical efforts on searching and designing new silicon phases, from bulk to two-dimensional (2D) silicon, with exceptional optoelectronic properties. Especially, we find that chemically functionalized 2D silicon and silicon alloys could be the best candidates to create efficient thin-film solar absorbers and silicon-based, white-light-emitting diodes, paving the way for new ``green'' energy applications.

  15. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-03-22

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  16. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-01-05

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  17. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  18. Optoelectronic investigation of nanodiamond interactions with human blood

    NASA Astrophysics Data System (ADS)

    Ficek, M.; Wróbel, M. S.; Wasowicz, M.; Jedrzejewska-Szczerska, M.

    2016-03-01

    We present optoelectronic investigation of in vitro interactions of whole human blood with different nanodiamond biomarkers. Plasmo-chemical modifications of detonation nanodiamond particles gives the possibility for controlling their surface for biological applications. Optical investigations reveal the biological activity of nanodiamonds in blood dependent on its surface termination. We compare different types of nanodiamonds: commercial non-modified detonation nanodiamonds, and nanodiamonds modified by MW PACVD method with H2-termination, and chemically modified nanodiamond with O2-termination. The absorption spectra, and optical microscope investigations were conducted. The results indicate haemocompatibility of non-modified detonation nanodiamond as well as modified nanodiamonds, which enables their application for drug delivery, as well as sensing applications.

  19. Advanced Opto-Electronics (LIDAR and Microsensor Development)

    NASA Technical Reports Server (NTRS)

    Vanderbilt, Vern C. (Technical Monitor); Spangler, Lee H.

    2005-01-01

    Our overall intent in this aspect of the project were to establish a collaborative effort between several departments at Montana State University for developing advanced optoelectronic technology for advancing the state-of-the-art in optical remote sensing of the environment. Our particular focus was on development of small systems that can eventually be used in a wide variety of applications that might include ground-, air-, and space deployments, possibly in sensor networks. Specific objectives were to: 1) Build a field-deployable direct-detection lidar system for use in measurements of clouds, aerosols, fish, and vegetation; 2) Develop a breadboard prototype water vapor differential absorption lidar (DIAL) system based on highly stable, tunable diode laser technology developed previously at MSU. We accomplished both primary objectives of this project, in developing a field-deployable direct-detection lidar and a breadboard prototype of a water vapor DIAL system. Paper summarizes each of these accomplishments.

  20. Recent developments in InP-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Venghaus, H.; Bach, H.-G.; Bauer, S.; Beling, A.; Heidrich, H.; Hoffman, D.; Hüttl, B.; Kaiser, R.; Kreissl, J.; Mekonnen, G. G.; Möhrle, M.; Rehbein, W.; Sartorius, B.; Velthaus, K.-O.

    2005-09-01

    Recent development trends in InP-based optoelectronic devices are illustrated by means of selected examples. These include lasers for uncooled operation and direct modulation at 10 Gbit/s, complex-coupled lasers, which exhibit particularly low sensitivity to back reflections as well as monolithic mode-locked semiconductor lasers as ps-pulse sources for OTDM applications. Furthermore, a Mach-Zehnder interferometer modulator for high bit rate applications (40 Gbit/s and beyond) is described, and finally, photoreceivers and ultra high-speed waveguide-integrated photodiodes with > 100 GHz bandwidth are presented, which are key component for high bit rate systems, advanced modulation format transmission links, and for high speed measurement equipment as well.

  1. EDITORIAL: Focus on Advanced Semiconductor Heterostructures for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Amann, Markus C.; Capasso, Federico; Larsson, Anders; Pessa, Markus

    2009-12-01

    Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures. Focus on Advanced Semiconductor Heterostructures for Optoelectronics Contents Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert and G Tränkle GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, F Guillot, G Pozzovivo, M Tchernycheva, A Lupu, L Vivien, P Crozat, E Warde, C Bougerol, S Schacham, G Strasser, G Bahir, E Monroy and F H Julien Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction/injection stage Maria I Amanti, Giacomo Scalari, Romain Terazzi, Milan Fischer, Mattias Beck, Jérôme Faist, Alok Rudra, Pascal Gallo and Eli Kapon Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Young Joon Hong, Jong-Myeong Jeon, Miyoung

  2. Optoelectronic delay-time controller for laser pulses.

    PubMed

    Lin, G R

    2000-06-01

    A dc-voltage-controlled optoelectronic delay line for continuous tuning of the relative delay time of an optical pulse train generated from a gain-switched laser diode is demonstrated. A maximum tunable range delay time of 3.9 ns ( approximately 2 periods) for optical pulses at a 500-MHz repetition rate is reported, which corresponds to a phase shift of as much as 4pi. The tuning responsivity and resolution of the current apparatus are 0.54 ps/mV and <0.2 ps, respectively. The measured timing fluctuation and long-term drift at any delay time are 0.13 ps and 20 fs/min, respectively. This scheme further permits the simultaneous phase tracking of the laser pulse train to unknown signals generated from the device under test.

  3. Injectable, Cellular-Scale Optoelectronics with Applications for Wireless Optogenetics

    NASA Astrophysics Data System (ADS)

    Kim, Tae-il; McCall, Jordan G.; Jung, Yei Hwan; Huang, Xian; Siuda, Edward R.; Li, Yuhang; Song, Jizhou; Song, Young Min; Pao, Hsuan An; Kim, Rak-Hwan; Lu, Chaofeng; Lee, Sung Dan; Song, Il-Sun; Shin, GunChul; Al-Hasani, Ream; Kim, Stanley; Tan, Meng Peun; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.; Bruchas, Michael R.

    2013-04-01

    Successful integration of advanced semiconductor devices with biological systems will accelerate basic scientific discoveries and their translation into clinical technologies. In neuroscience generally, and in optogenetics in particular, the ability to insert light sources, detectors, sensors, and other components into precise locations of the deep brain yields versatile and important capabilities. Here, we introduce an injectable class of cellular-scale optoelectronics that offers such features, with examples of unmatched operational modes in optogenetics, including completely wireless and programmed complex behavioral control over freely moving animals. The ability of these ultrathin, mechanically compliant, biocompatible devices to afford minimally invasive operation in the soft tissues of the mammalian brain foreshadow applications in other organ systems, with potential for broad utility in biomedical science and engineering.

  4. Digital optical computers at the optoelectronic computing systems center

    NASA Technical Reports Server (NTRS)

    Jordan, Harry F.

    1991-01-01

    The Digital Optical Computing Program within the National Science Foundation Engineering Research Center for Opto-electronic Computing Systems has as its specific goal research on optical computing architectures suitable for use at the highest possible speeds. The program can be targeted toward exploiting the time domain because other programs in the Center are pursuing research on parallel optical systems, exploiting optical interconnection and optical devices and materials. Using a general purpose computing architecture as the focus, we are developing design techniques, tools and architecture for operation at the speed of light limit. Experimental work is being done with the somewhat low speed components currently available but with architectures which will scale up in speed as faster devices are developed. The design algorithms and tools developed for a general purpose, stored program computer are being applied to other systems such as optimally controlled optical communication networks.

  5. Scanning tunneling microscopy studies of diamond films and optoelectronic materials

    NASA Technical Reports Server (NTRS)

    Perez, Jose M.

    1993-01-01

    In this report, we report on progress achieved from 12/1/92 to 10/1/93 under the grant entitled 'Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials'. We have set-up a chemical vapor deposition (CVD) diamond film growth system and a Raman spectroscopy system to study the nucleation and growth of diamond films with atomic resolution using scanning tunneling microscopy (STM). A unique feature of the diamond film growth system is that diamond films can be transferred directly to the ultrahigh vacuum (UHV) chamber of a scanning tunneling microscope without contaminating the films by exposure to air. The University of North Texas (UNT) provided $20,000 this year as matching funds for the NASA grant to purchase the diamond growth system. In addition, UNT provided a Coherent Innova 90S Argon ion laser, a Spex 1404 double spectrometer, and a Newport optical table costing $90,000 to set-up the Raman spectroscopy system. The CVD diamond growth system and Raman spectroscopy system will be used to grow and characterize diamond films with atomic resolution using STM as described in our proposal. One full-time graduate student and one full-time undergraduate student are supported under this grant. In addition, several graduate and undergraduate students were supported during the summer to assist in setting-up the diamond growth and Raman spectroscopy systems. We have obtained research results concerning STM of the structural and electronic properties of CVD grown diamond films, and STM and scanning tunneling spectroscopy of carbon nanotubes. In collaboration with the transmission electron microscopy (TEM) group at UNT, we have also obtained results concerning the optoelectronic material siloxene. These results were published in refereed scientific journals, submitted for publication, and presented as invited and contributed talks at scientific conferences.

  6. Communications with chaotic optoelectronic systems cryptography and multiplexing

    NASA Astrophysics Data System (ADS)

    Rontani, Damien

    With the rapid development of optical communications and the increasing amount of data exchanged, it has become utterly important to provide effective architectures to protect sensitive data. The use of chaotic optoelectronic devices has already demonstrated great potential in terms of additional computational security at the physical layer of the optical network. However, the determination of the security level and the lack of a multi-user framework are two hurdles which have prevented their deployment on a large scale. In this thesis, we propose to address these two issues. First, we investigate the security of a widely used chaotic generator, the external cavity semiconductor laser (ECSL). This is a time-delay system known for providing complex and high-dimensional chaos, but with a low level of security regarding the identification of its most critical parameter, the time delay. We perform a detailed analysis of the in uence of the ECSL parameters to devise how higher levels of security can be achieved and provide a physical interpretation of their origin. Second, we devise new architectures to multiplex optical chaotic signals and realize multi-user communications at high bit rates. We propose two different approaches exploiting known chaotic optoelectronic devices. The first one uses mutually coupled ECSL and extends typical chaos-based encryption strategies, such as chaos-shift keying (CSK) and chaos modulation (CMo). The second one uses an electro-optical oscillator (EOO) with multiple delayed feedback loops and aims first at transposing coded-division multiple access (CDMA) and then at developing novel strategies of encryption and decryption, when the time-delays of each feedback loop are time-dependent.

  7. Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.

    PubMed

    Jariwala, Deep; Davoyan, Artur R; Tagliabue, Giulia; Sherrott, Michelle C; Wong, Joeson; Atwater, Harry A

    2016-09-14

    We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

  8. Cellular interconnects optimization algorithm for optoelectronic single-instruction multiple data.

    PubMed

    Hoanca, B; Sawchuk, A A

    1998-02-10

    We present a novel algorithm for designing optimal cellular interconnects (OCI's), which can significantly accelerate the communications among processors in single-instruction multiple-data machines with optoelectronic interconnections. We present the foundations of the OCI architecture and show that the optoelectronic OCI is the optimal topology for a space-invariant interconnect pattern. The OCI is optimal in achieving a minimum number of clock cycles per data shift for a given number of optoelectronic links. In addition, our algorithm for designing the OCI is deterministic, whereas previous designs required a trial-and-error procedure.

  9. Modeling and optoelectronic realization of an artificial cortex

    NASA Astrophysics Data System (ADS)

    Pashaie, Ramin

    codes and cortical topological computational maps. Next step in this research is seeking suitable enabling technologies, such as electronics and optics, for hardware implementation of these cortical models. It is a general consensus that realization of parallelism and massive interconnections can be done far better in optics compared to electronics. Nevertheless, one can exploit optoelectronic methodologies that combine the benefits of optics with flexibilities of electronics. An innovative optoelectronic approach is taking advantage of the optical mechanism of a special type of stimulable storage phosphor, the so called electron trapping materials. Our analytical modelings and experimental works reveal that the equilibrium state luminescence of this material can be controlled to generate a variety of different nonlinear behaviors including quasi-quadratic responses that can be used for generation of quadratic return maps. Combining this versatility with the state-of-the-art high speed spatial light modulators and CCD cameras, large arrays of quadratic return maps can be accommodated in a thin film of electron trapping material. Another approach which is investigated in this dissertation is based on using the recently developed digital microelectromechanic spatial light modulators. These modulators can control the exposure precisely. We show that a closed loop of such a spatial light modulator and a CCD camera can be used to build an optoelectronic machine suitable for parallel recursive computations similar to our cortical models.

  10. Oxide semiconductors for organic opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Sigdel, Ajaya K.

    In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the

  11. Middle infrared optoelectronic absorption systems for monitoring physiological glucose solutions

    NASA Astrophysics Data System (ADS)

    Martin, W. Blake

    Tight monitoring of the glucose levels for diabetic individuals is essential to control long-term complications. A definitive diabetes management system has yet to be developed for the diabetic. This research investigates the application of middle infrared absorption frequencies for monitoring glucose levels in biological solutions. Three frequencies were identified using a Fourier transform infrared spectrometer and correlated to changes in glucose concentrations. The 1035 +/- 1 cm-1 frequency was determined to be the best representative frequency. Other biological molecules contributed no significant interference to monitoring glucose absorption. A second frequency at 1193 cm-1 was suggested as a representative background absorption frequency, which could be used for more accurate glucose absorption values. Next, a quantum cascade laser optoelectronic absorption system was designed and developed to monitor glucose. After careful alignment and design, the system was used to monitor physiological glucose concentrations. Correlation at 1036 cm-1 with glucose changes was comparable to the previous results. The use of the background absorption frequency was verified. This frequency essentially acts as a calibrating frequency to adjust in real-time to any changes in the background absorption that may alter the accuracy of the predicted glucose value. An evanescent wave cavity ring-down spectroscopy technique was explored to monitor molecules in a biological solution. Visible light at 425 nm was used to monitor hemoglobin in control urine samples. An adsorption isotherm for hemoglobin was detectable to limit of 5.8 nM. Evanescent wave cavity ring-down spectroscopy would be useful for a glucose solution. Given an equivalent system designed for the middle infrared, the molar extinction coefficient of glucose allows for a detectable limit of 45 mg/dl for a free-floating glucose solution, which is below normal physiological concentrations. The future use of a hydrophobic

  12. Surface directed assembly of conjugated polymers for optoelectronics

    NASA Astrophysics Data System (ADS)

    Liang, Ziqi

    Conjugated polymers combining the optical and electronic properties of semiconductors with advantages of organic materials are being explored as active components in various types of thin-film electronic and optoelectronic devices. The realization of conjugated polymer based electronics and optoelectronics critically depends on developing novel approaches for assembling this new class of materials into a controlled fashion. We have developed new non-photolithographic methods for the spatial deposition of conjugated polymers. As a proof-of-concept of these methods, the well-known luminescent polymer, poly(p-phenylene vinylene) (PPV), has been used as a model structure in our work. One strategy is based on the modification of solid substrates with microcontact-printed self-assembled monolayers (SAMs) that serve as templates for the deposition of PPVs from solution. Conjugated polymer patterns have also been generated by directly stamping of PPVs onto the reactive SAMs-coated substrates. In both methods, PPVs were covalently immobilized onto the supporting surface through the formation of amide bonds, thus rendering great stability of the resulting patterns. Well-defined PPV micropatterns have been fully characterized by UV-vis spectroscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM) and fluorescence optical microscopy. The interaction between PPVs and the underlying surface was analyzed by grazing-angle reflectance Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS). Many applications based on conjugated polymers require the controlled assembly of the polymers as multilayer structures, in which molecules with different functionality can be incorporated into individual layers with precisely controlled thickness. We have developed a series of layer-by-layer (LbL) assembly approaches to multilayer conjugated polymer thin films. Hydrogen-bonding interaction and covalent coupling reaction have been utilized

  13. High throughput optoelectronic smart pixel systems using diffractive optics

    NASA Astrophysics Data System (ADS)

    Chen, Chih-Hao

    1999-12-01

    Recent developments in digital video, multimedia technology and data networks have greatly increased the demand for high bandwidth communication channels and high throughput data processing. Electronics is particularly suited for switching, amplification and logic functions, while optics is more suitable for interconnections and communications with lower energy and crosstalk. In this research, we present the design, testing, integration and demonstration of several optoelectronic smart pixel devices and system architectures. These systems integrate electronic switching/processing capability with parallel optical interconnections to provide high throughput network communication and pipeline data processing. The Smart Pixel Array Cellular Logic processor (SPARCL) is designed in 0.8 m m CMOS and hybrid integrated with Multiple-Quantum-Well (MQW) devices for pipeline image processing. The Smart Pixel Network Interface (SAPIENT) is designed in 0.6 m m GaAs and monolithically integrated with LEDs to implement a highly parallel optical interconnection network. The Translucent Smart Pixel Array (TRANSPAR) design is implemented in two different versions. The first version, TRANSPAR-MQW, is designed in 0.5 m m CMOS and flip-chip integrated with MQW devices to provide 2-D pipeline processing and translucent networking using the Carrier- Sense-MultipleAccess/Collision-Detection (CSMA/CD) protocol. The other version, TRANSPAR-VM, is designed in 1.2 m m CMOS and discretely integrated with VCSEL-MSM (Vertical-Cavity-Surface- Emitting-Laser and Metal-Semiconductor-Metal detectors) chips and driver/receiver chips on a printed circuit board. The TRANSPAR-VM provides an option of using the token ring network protocol in addition to the embedded functions of TRANSPAR-MQW. These optoelectronic smart pixel systems also require micro-optics devices to provide high resolution, high quality optical interconnections and external source arrays. In this research, we describe an innovative

  14. 78 FR 16296 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-14

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... optic communications, components thereof, and products containing the same by reason of infringement...

  15. 25th anniversary article: carbon nanotube- and graphene-based transparent conductive films for optoelectronic devices.

    PubMed

    Du, Jinhong; Pei, Songfeng; Ma, Laipeng; Cheng, Hui-Ming

    2014-04-02

    Carbon nanotube (CNT)- and graphene (G)-based transparent conductive films (TCFs) are two promising alternatives for commonly-used indium tin oxide-based TCFs for future flexible optoelectronic devices. This review comprehensively summarizes recent progress in the fabrication, properties, modification, patterning, and integration of CNT- and G-TCFs into optoelectronic devices. Their potential applications and challenges in optoelectronic devices, such as organic photovoltaic cells, organic light emitting diodes and touch panels, are discussed in detail. More importantly, their key characteristics and advantages for use in these devices are compared. Despite many challenges, CNT- and G-TCFs have demonstrated great potential in various optoelectronic devices and have already been used for some products like touch panels of smartphones. This illustrates the significant opportunities for the industrial use of CNTs and graphene, and hence pushes nanoscience and nanotechnology one step towards practical applications.

  16. One-dimensional CdS nanostructures: a promising candidate for optoelectronics.

    PubMed

    Li, Huiqiao; Wang, Xi; Xu, Junqi; Zhang, Qi; Bando, Yoshio; Golberg, Dmitri; Ma, Ying; Zhai, Tianyou

    2013-06-11

    As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted.

  17. Design of optical metamaterial mirror with metallic nanoparticles for floating-gate graphene optoelectronic devices.

    PubMed

    Lee, Seungwoo; Kim, Juyoung

    2015-08-24

    The purpose of this work is to conceive the idea for using the gate dielectrics of floating-gate memory device (i.e., Au nanoparticle (AuNP) monolayer embedded within polymeric matrix) as a magnetic mirror, so as to harness the broadband light absorption of thin film optoelectronics. In particular, we systematically examined whether the versatile assembly of spherical AuNP monolayer can be indeed treated as the effective magnetic mirror for floating-gate graphene optoelectronic device. High amenability of the AuNP assembly with the large-area device fabrication procedures may make this strategy widely applicable to various thin film optoelectronic devices. Our study thereby advances the design of mirror for thin film optoelectronics.

  18. EDFA-based coupled opto-electronic oscillator and its phase noise

    NASA Technical Reports Server (NTRS)

    Salik, Ertan; Yu, Nan; Tu, Meirong; Maleki, Lute

    2004-01-01

    EDFA-based coupled opto-electronic oscillator (COEO), an integrated optical and microwave oscillator that can generate picosecond optical pulses, is presented. the phase noise measurements of COEO show better performance than synthesizer-driven mode-locked laser.

  19. Optoelectronic mixing on CVD graphene up to 30 Gigahertz: analysis at high electrostatic doping

    NASA Astrophysics Data System (ADS)

    Montanaro, A.; Mzali, S.; Mazellier, J.-P.; Molin, S.; Larat, C.; Bezencenet, O.; Legagneux, P.

    2016-09-01

    Due to its remarkable properties, graphene-based devices are particularly promising for optoelectronic applications. Thanks to its compatibility with standard silicon technology, graphene could compete III-V compounds for the development of low cost and high-frequency optoelectronic devices. We present a new optoelectronic device that consists in a coplanar waveguide integrating a commercially-available CVD graphene active channel. With this structure, we demonstrate high-frequency (30 GHz) broadband optoelectronic mixing in graphene, by measuring the response of the device to an optical intensity-modulated excitation and an electrical excitation at the same time. These features are particularly promising for RADAR and LIDAR applications, as well as for low-cost high-speed communication systems.

  20. Metamorphic InAsSb/AlInAsSb Heterostructures for Optoelectronic Applications

    DTIC Science & Technology

    2013-03-20

    REPORT Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: Metamorphic ...TELEPHONE NUMBER Gregory Belenky 631-632-8397 3. DATES COVERED (From - To) Standard Form 298 (Rev 8/98) Prescribed by ANSI Std. Z39.18 - Metamorphic InAsSb...AlInAsSb heterostructures for optoelectronic applications Report Title ABSTRACT Metamorphic heterostructures containing bulk InAs1?xSbx layers and

  1. Study of Opto-electronic Properties of a Single Microtubule in the Microwave Regime

    DTIC Science & Technology

    2013-01-09

    Annual Report for AOARD Grant FA2386-11-1-0001 “Research Title” Study of opto-electronic properties of a single microtubule in the microwave regime...SUBTITLE Study of opto-electronic properties of a single microtubule in the microwave regime 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM...signature [porcine (brain neuron), human (MCF 7 active breast cancer cell), fungi 26 (Agaricus bisporus mashroom,) and plant (six days old soybean

  2. New optoelectronic sensor for measuring biologically effective irradiance

    NASA Astrophysics Data System (ADS)

    Kosyachenko, Leonid A.; Sklyarchuk, Valery M.

    1997-12-01

    A new optoelectronic sensor whose spectral responsivity to UV radiation is almost identical with that of the human skin or of the eyes is presented. The sensor comprises two closely-spaced UV-sensitive Au-SiC diode, one of which is fitted with a glass filter. The photodiodes are connected to electronics that amplifies, combines and subtracts electrical signals generated by radiation in the photodiodes. The responsivity of the Au-SiC diode structure with a semitransparent gold electrode covers the whole UV spectrum, with the long-wavelength end bounded by the semiconductor bandgap. The photodiode with a filter absorbing wavelengths shorter than 315-320 nm is responsive in the UV-A region, while the difference between the electrical signals generated in the filter-containing and filter-free diodes is determined by the UV-B + IV-C radiation. The measuring of biologically effective radiation over the entire UV spectral range is achieved through combining the signal generated by UV-A radiation and the previously amplified difference signal generated by UV-B + UV-C radiation. The sensor spectral responsivity thus obtained is very close to the tabular curve of the relative spectral effectiveness of UV radiation on the normal human skin or eyes.

  3. Computational Studies on Optoelectronic and Nonlinear Properties of Octaphyrin Derivatives

    PubMed Central

    Islam, Nasarul; Lone, Irfan H.

    2017-01-01

    The electronic and nonlinear optical (NLO) properties of octaphyrin derivatives were studied by employing the DFT/TDFT at CAM-B3LYP/6-311++G (2d, 2p) level of the theory. Thiophene, phenyl, methyl and cyano moieties were substituted on the molecular framework of octaphyrin core, in order to observe the change in optoelectronic and nonlinear response of these systems. The frontier molecular orbital studies and values of electron affinity reveals that the studied compounds are stable against the oxygen and moisture present in air. The calculated ionization energies, adiabatic electron affinity and reorganization energy values indicate that octaphyrin derivatives can be employed as effective n-type material for Organic Light Emitting Diodes (OLEDs). This character shows an enhancement with the introduction of an electron withdrawing group in the octaphyrin framework. The polarizability and hyperpolarizability values of octaphyrin derivatives demonstrate that they are good candidates for NLO devices. The nonlinear response of these systems shows enhancement on the introduction of electron donating groups on octaphyrin moiety. However, these claims needs further experimental verification. PMID:28321394

  4. Extreme Light Management in Mesoporous Wood Cellulose Paper for Optoelectronics.

    PubMed

    Zhu, Hongli; Fang, Zhiqiang; Wang, Zhu; Dai, Jiaqi; Yao, Yonggang; Shen, Fei; Preston, Colin; Wu, Wenxin; Peng, Peng; Jang, Nathaniel; Yu, Qingkai; Yu, Zongfu; Hu, Liangbing

    2016-01-26

    Wood fibers possess natural unique hierarchical and mesoporous structures that enable a variety of new applications beyond their traditional use. We dramatically modulate the propagation of light through random network of wood fibers. A highly transparent and clear paper with transmittance >90% and haze <1.0% applicable for high-definition displays is achieved. By altering the morphology of the same wood fibers that form the paper, highly transparent and hazy paper targeted for other applications such as solar cell and antiglare coating with transmittance >90% and haze >90% is also achieved. A thorough investigation of the relation between the mesoporous structure and the optical properties in transparent paper was conducted, including full-spectrum optical simulations. We demonstrate commercially competitive multitouch touch screen with clear paper as a replacement for plastic substrates, which shows excellent process compatibility and comparable device performance for commercial applications. Transparent cellulose paper with tunable optical properties is an emerging photonic material that will realize a range of much improved flexible electronics, photonics, and optoelectronics.

  5. A nanomesh scaffold for supramolecular nanowire optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Zhong, Xiaolan; Pavlica, Egon; Li, Songlin; Klekachev, Alexander; Bratina, Gvido; Ebbesen, Thomas W.; Orgiu, Emanuele; Samorì, Paolo

    2016-10-01

    Supramolecular organic nanowires are ideal nanostructures for optoelectronics because they exhibit both efficient exciton generation as a result of their high absorption coefficient and remarkable light sensitivity due to the low number of grain boundaries and high surface-to-volume ratio. To harvest photocurrent directly from supramolecular nanowires it is necessary to wire them up with nanoelectrodes that possess different work functions. However, devising strategies that can connect multiple nanowires at the same time has been challenging. Here, we report a general approach to simultaneously integrate hundreds of supramolecular nanowires of N,N‧-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) in a hexagonal nanomesh scaffold with asymmetric nanoelectrodes. Optimized PTCDI-C8 nanowire photovoltaic devices exhibit a signal-to-noise ratio approaching 107, a photoresponse time as fast as 10 ns and an external quantum efficiency >55%. This nanomesh scaffold can also be used to investigate the fundamental mechanism of photoelectrical conversion in other low-dimensional semiconducting nanostructures.

  6. Optoelectronics in two-dimensional semiconductor alloys (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Léonard, François

    2015-08-01

    Two -dimensional transition-metal dichalcogenides (2D-TMDs) have attracted attention for applications in electronics and photonics, as well as for the wealth of new scientific phenomena that arise at low dimensionality. Recently, the ability to grow 2D-TMDs by chemical vapor deposition has opened the path to large area devices, but also to the synthesis of semiconductor alloys with tunable bandgaps. In this presentation, I will discuss our recent experimental work in exploring the optoelectronic properties of 2D MoS_2(1-x)Se_2x alloys spanning the compositional range. In particular, we report the observation of a new regime of operation where the photocurrent depends superlinearly on light intensity. We use spatially-resolved photocurrent measurements on devices consisting of CVD-grown monolayers to show the photoconductive nature of the photoresponse, with the photocurrent dominated by recombination and field-induced carrier separation in the channel. Time-dependent photoconductivity measurements show the presence of persistent photoconductivity for the S-rich alloys, while photocurrent measurements at fixed wavelength for devices of different alloy compositions show a systematic decrease of the responsivity with increasing Se content associated with increased linearity of the current-voltage characteristics. A model based on the presence of different types of recombination centers is presented to explain the origin of the superlinear dependence on light intensity, which emerges when the non-equilibrium occupancy of initially empty fast recombination centers becomes comparable to that of slow recombination centers.

  7. 3-D movies using microprocessor-controlled optoelectronic spectacles

    NASA Astrophysics Data System (ADS)

    Jacobs, Ken; Karpf, Ron

    2012-02-01

    Despite rapid advances in technology, 3-D movies are impractical for general movie viewing. A new approach that opens all content for casual 3-D viewing is needed. 3Deeps--advanced microprocessor controlled optoelectronic spectacles--provides such a new approach to 3-D. 3Deeps works on a different principle than other methods for 3-D. 3-D movies typically use the asymmetry of dual images to produce stereopsis, necessitating costly dual-image content, complex formatting and transmission standards, and viewing via a corresponding selection device. In contrast, all 3Deeps requires to view movies in realistic depth is an illumination asymmetry--a controlled difference in optical density between the lenses. When a 2-D movie has been projected for viewing, 3Deeps converts every scene containing lateral motion into realistic 3-D. Put on 3Deeps spectacles for 3-D viewing, or remove them for viewing in 2-D. 3Deeps works for all analogue and digital 2-D content, by any mode of transmission, and for projection screens, digital or analogue monitors. An example using aerial photography is presented. A movie consisting of successive monoscopic aerial photographs appears in realistic 3-D when viewed through 3Deeps spectacles.

  8. Simulating optoelectronic systems for remote sensing with SENSOR

    NASA Astrophysics Data System (ADS)

    Boerner, Anko

    2003-04-01

    The consistent end-to-end simulation of airborne and spaceborne remote sensing systems is an important task and sometimes the only way for the adaptation and optimization of a sensor and its observation conditions, the choice and test of algorithms for data processing, error estimation and the evaluation of the capabilities of the whole sensor system. The presented software simulator SENSOR (Software ENvironment for the Simulation of Optical Remote sensing systems) includes a full model of the sensor hardware, the observed scene, and the atmosphere in between. It allows the simulation of a wide range of optoelectronic systems for remote sensing. The simulator consists of three parts. The first part describes the geometrical relations between scene, sun, and the remote sensing system using a ray tracing algorithm. The second part of the simulation environment considers the radiometry. It calculates the at-sensor radiance using a pre-calculated multidimensional lookup-table taking the atmospheric influence on the radiation into account. Part three consists of an optical and an electronic sensor model for the generation of digital images. Using SENSOR for an optimization requires the additional application of task-specific data processing algorithms. The principle of the end-to-end-simulation approach is explained, all relevant concepts of SENSOR are discussed, and examples of its use are given. The verification of SENSOR is demonstrated.

  9. Fluorescence particle detection using microfluidics and planar optoelectronic elements

    NASA Astrophysics Data System (ADS)

    Kettlitz, Siegfried W.; Moosmann, Carola; Valouch, Sebastian; Lemmer, Uli

    2014-05-01

    Detection of fluorescent particles is an integral part of flow cytometry for analysis of selectively stained cells. Established flow cytometer designs achieve great sensitivity and throughput but require bulky and expensive components which prohibit mass production of small single-use point-of-care devices. The use of a combination of innovative technologies such as roll-to-roll printed microuidics with integrated optoelectronic components such as printed organic light emitting diodes and printed organic photodiodes enables tremendous opportunities in cost reduction, miniaturization and new application areas. In order to harvest these benefits, the optical setup requires a redesign to eliminate the need for lenses, dichroic mirrors and lasers. We investigate the influence of geometric parameters on the performance of a thin planar design which uses a high power LED as planar light source and a PIN-photodiode as planar detector. Due to the lack of focusing optics and inferior optical filters, the device sensitivity is not yet on par with commercial state of the art flow cytometer setups. From noise measurements, electronic and optical considerations we deduce possible pathways of improving the device performance. We identify that the sensitivity is either limited by dark noise for very short apertures or by noise from background light for long apertures. We calculate the corresponding crossover length. For the device design we conclude that a low device thickness, low particle velocity and short aperture length are necessary to obtain optimal sensitivity.

  10. Optoelectronic plethysmography compared to spirometry during maximal exercise.

    PubMed

    Layton, Aimee M; Moran, Sienna L; Garber, Carol Ewing; Armstrong, Hilary F; Basner, Robert C; Thomashow, Byron M; Bartels, Matthew N

    2013-01-15

    The purpose of this study was to compare simultaneous measurements of tidal volume (Vt) by optoelectronic plethysmography (OEP) and spirometry during a maximal cycling exercise test to quantify possible differences between methods. Vt measured simultaneously by OEP and spirometry was collected during a maximal exercise test in thirty healthy participants. The two methods were compared by linear regression and Bland-Altman analysis at submaximal and maximal exercise. The average difference between the two methods and the mean percentage discrepancy were calculated. Submaximal exercise (SM) and maximal exercise (M) Vt measured by OEP and spirometry had very good correlation, SM R=0.963 (p<0.001), M R=0.982 (p<0.001) and high degree of common variance, SM R(2)=0.928, M R(2)=0.983. Bland-Altman analysis demonstrated that during SM, OEP could measure exercise Vt as much as 0.134 L above and -0.025 L below that of spirometry. OEP could measure exercise Vt as much as 0.188 L above and -0.017 L below that of spirometry. The discrepancy between measurements was -2.0 ± 7.2% at SM and -2.4 ± 3.9% at M. In conclusion, Vt measurements at during exercise by OEP and spirometry are closely correlated and the difference between measurements was insignificant.

  11. Optoelectronics of supported and suspended 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Bolotin, Kirill

    2014-03-01

    Two-dimensional semiconductors, materials such monolayer molybdenum disulfide (MoS2) are characterized by strong spin-orbit and electron-electron interactions. However, both electronic and optoelectronic properties of these materials are dominated by disorder-related scattering. In this talk, we investigate approaches to reduce scattering and explore physical phenomena arising in intrinsic 2D semiconductors. First, we discuss fabrication of pristine suspended monolayer MoS2 and use photocurrent spectroscopy measurements to study excitons in this material. We observe band-edge and van Hove singularity excitons and estimate their binding energies. Furthermore, we study dissociation of these excitons and uncover the mechanism of their contribution to photoresponse of MoS2. Second, we study strain-induced modification of bandstructures of 2D semiconductors. With increasing strain, we find large and controllable band gap reduction of both single- and bi-layer MoS2. We also detect experimental signatures consistent with strain-induced transition from direct to indirect band gap in monolayer MoS2. Finally, we fabricate heterostructures of dissimilar 2D semiconductors and study their photoresponse. For closely spaced 2D semiconductors we detect charge transfer, while for separation larger than 10nm we observe Forster-like energy transfer between excitations in different layers.

  12. Advanced polymer systems for optoelectronic integrated circuit applications

    NASA Astrophysics Data System (ADS)

    Eldada, Louay A.; Stengel, Kelly M. T.; Shacklette, Lawrence W.; Norwood, Robert A.; Xu, Chengzeng; Wu, Chengjiu; Yardley, James T.

    1997-01-01

    An advanced versatile low-cost polymeric waveguide technology is proposed for optoelectronic integrated circuit applications. We have developed high-performance organic polymeric materials that can be readily made into both multimode and single-mode optical waveguide structures of controlled numerical aperture (NA) and geometry. These materials are formed from highly crosslinked acrylate monomers with specific linkages that determine properties such as flexibility, toughness, loss, and stability against yellowing and humidity. These monomers are intermiscible, providing for precise adjustment of the refractive index from 1.30 to 1.60. Waveguides are formed photolithographically, with the liquid monomer mixture polymerizing upon illumination in the UV via either mask exposure or laser direct-writing. A wide range of rigid and flexible substrates can be used, including glass, quartz, oxidized silicon, glass-filled epoxy printed circuit board substrate, and flexible polyimide film. We discuss the use of these materials on chips and on multi-chip modules (MCMs), specifically in transceivers where we adaptively produced waveguides on vertical-cavity surface-emitting lasers (VCSELs) embedded in transmitter MCMs and on high- speed photodetector chips in receiver MCMs. Light coupling from and to chips is achieved by cutting 45 degree mirrors using excimer laser ablation. The fabrication of our polymeric structures directly on the modules provides for stability, ruggedness, and hermeticity in packaging.

  13. Electronic and optoelectronic materials and devices inspired by nature.

    PubMed

    Meredith, P; Bettinger, C J; Irimia-Vladu, M; Mostert, A B; Schwenn, P E

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities-some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the 'ubiquitous sensor network', all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow ('ionics and protonics') and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  14. Prospects of III-nitride optoelectronics grown on Si

    NASA Astrophysics Data System (ADS)

    Zhu, D.; Wallis, D. J.; Humphreys, C. J.

    2013-10-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures.

  15. Organic (opto)electronic materials: understanding charge carrier dynamics

    NASA Astrophysics Data System (ADS)

    Ostroverkhova, Oksana

    2008-05-01

    There is growing interest in using organic (opto)electronic materials for applications in electronics and photonics. In particular, organic semiconductor thin films offer several advantages over traditional silicon technology, including low-cost processing, the potential for large-area flexible devices, high-efficiency light emission, and widely tunable properties through functionalization of the molecules. Over the past decade, remarkable progress in materials design and purification has been made, which led to applications of organic semiconductors in light-emitting diodes, polymer lasers, photovoltaic cells, high-speed photodetectors, organic thin-film transistors, and many others. Most of the applications envisioned for organic semiconductors rely on their conductive or photoconductive properties. However, despite remarkable progress in organic electronics and photonics, the nature of charge carrier photogeneration and transport in organic semiconductors is not completely understood and remains controversial, partly due to difficulties in assessing intrinsic properties that are often masked by impurities, grain boundaries, etc. Measurements of charge carrier dynamics at picosecond time scales after excitation reveal the intrinsic nature of mobile charge carriers before they are trapped at defect sites. In this presentation, I will review the current state of the field and summarize our recent results on photoconductivity of novel high-performance organic semiconductors (such as functionalized pentacene and anthradithiophene thin films) from picoseconds to seconds after photoexcitation. Photoluminescent properties of these novel materials will also be discussed.

  16. Narrow band gap conjugated polymers for emergent optoelectronic technologies

    NASA Astrophysics Data System (ADS)

    Azoulay, Jason D.; Zhang, Benjamin A.; London, Alexander E.

    2015-09-01

    Conjugated organic molecules effectively produce and harvest visible light and find utility in a variety of emergent optoelectronic technologies. There is currently interest in expanding the scope of these materials to extend functionality into the infrared (IR) spectral regions and endow functionality relevant in emergent technologies. Developing an understanding of the interplay between chemical and electronic structure in these systems will require control of the frontier orbital energetics (separation, position, and alignment), ground state electronic configurations, interchain arrangements, solid-state properties, and many other molecular features with synthetic precision that has yet to be demonstrated. Bridgehead imine substituted 4H-cyclopenta[2,1-b:3,4-b']dithiophene (CPDT) structural units, in combination with strong acceptors with progressively delocalized π-systems, afford modular donor-acceptor copolymers with broad and long wavelength absorption that spans technologically relevant wavelength (λ) ranges from 0.7 < λ < 3.2 μm.1 Here we demonstrate that electronic and structural manipulation play a major role in influencing the energetics of these systems and ultimately controlling the band gap of the materials. These results bear implication in the development of very narrow band gap systems where precise control will be necessary for achieving desired properties such as interactions with longer wavelength light.

  17. Manipulating and assembling metallic beads with Optoelectronic Tweezers

    NASA Astrophysics Data System (ADS)

    Zhang, Shuailong; Juvert, Joan; Cooper, Jonathan M.; Neale, Steven L.

    2016-09-01

    Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been developed as a micromanipulation technology for controlling micro- and nano-particles with applications such as cell sorting and studying cell communications. Additionally, the capability of moving small objects accurately and assembling them into arbitrary 2D patterns also makes OET an attractive technology for microfabrication applications. In this work, we demonstrated the use of OET to manipulate conductive silver-coated Poly(methyl methacrylate) (PMMA) microspheres (50 μm diameter) into tailored patterns. It was found that the microspheres could be moved at a max velocity of 3200 μm/s, corresponding to 4.2 nano-newton (10‑9 N) DEP force, and also could be positioned with high accuracy via this DEP force. The underlying mechanism for this strong DEP force is shown by our simulations to be caused by a significant increase of the electric field close to the particles, due to the interaction between the field and the silver shells coating the microspheres. The associated increase in electrical gradient causes DEP forces that are much stronger than any previously reported for an OET device, which facilitates manipulation of the metallic microspheres efficiently without compromise in positioning accuracy and is important for applications on electronic component assembling and circuit construction.

  18. Miniaturized optoelectronic system for telemetry of in vivo voltammetric signals.

    PubMed

    De Simoni, M G; De Luigi, A; Imeri, L; Algeri, S

    1990-08-01

    In vivo voltammetry is an electrochemical technique that uses carbon fiber microelectrodes stereotaxically implanted in brain areas to monitor monoamine metabolism and release continuously, in freely moving animals. Electric wires connect the polarograph to the animal. A wire-less transmission system (optoelectronic transmission, OPT) of voltammetric signals is described here. It uses infrared diffused light, exploiting the diffusion of the transmitted light over walls and ceiling towards a receiver. The transmission system consists of a main unit and a satellite unit (40 x 30 x 5 mm) positioned on the animal's back. Voltammetric recordings obtained by the classical system (with wires) and by OPT are well defined and almost identical in shape. The power supply is provided by two thin lithium batteries (+/- 3V) that can record for up to 20 h. OPT permits detailed behavioral observations since the animal can be left free to move in a spacious environment. Voltammetry using OPT allows simultaneous recording of neuronal firing activity as well as electroencephalographic recordings (EEG) since there is no cross-talk between the circuits used. The results illustrate the reliability and usefulness of this wire-less transmission system for studying relationships between neurochemical, behavioral and electrophysiological activities.

  19. Manipulating and assembling metallic beads with Optoelectronic Tweezers

    PubMed Central

    Zhang, Shuailong; Juvert, Joan; Cooper, Jonathan M.; Neale, Steven L.

    2016-01-01

    Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been developed as a micromanipulation technology for controlling micro- and nano-particles with applications such as cell sorting and studying cell communications. Additionally, the capability of moving small objects accurately and assembling them into arbitrary 2D patterns also makes OET an attractive technology for microfabrication applications. In this work, we demonstrated the use of OET to manipulate conductive silver-coated Poly(methyl methacrylate) (PMMA) microspheres (50 μm diameter) into tailored patterns. It was found that the microspheres could be moved at a max velocity of 3200 μm/s, corresponding to 4.2 nano-newton (10−9 N) DEP force, and also could be positioned with high accuracy via this DEP force. The underlying mechanism for this strong DEP force is shown by our simulations to be caused by a significant increase of the electric field close to the particles, due to the interaction between the field and the silver shells coating the microspheres. The associated increase in electrical gradient causes DEP forces that are much stronger than any previously reported for an OET device, which facilitates manipulation of the metallic microspheres efficiently without compromise in positioning accuracy and is important for applications on electronic component assembling and circuit construction. PMID:27599445

  20. MOF-based electronic and opto-electronic devices.

    PubMed

    Stavila, V; Talin, A A; Allendorf, M D

    2014-08-21

    Metal-organic frameworks (MOFs) are a class of hybrid materials with unique optical and electronic properties arising from rational self-assembly of the organic linkers and metal ions/clusters, yielding myriads of possible structural motifs. The combination of order and chemical tunability, coupled with good environmental stability of MOFs, are prompting many research groups to explore the possibility of incorporating these materials as active components in devices such as solar cells, photodetectors, radiation detectors, and chemical sensors. Although this field is only in its incipiency, many new fundamental insights relevant to integrating MOFs with such devices have already been gained. In this review, we focus our attention on the basic requirements and structural elements needed to fabricate MOF-based devices and summarize the current state of MOF research in the area of electronic, opto-electronic and sensor devices. We summarize various approaches to designing active MOFs, creation of hybrid material systems combining MOFs with other materials, and assembly and integration of MOFs with device hardware. Critical directions of future research are identified, with emphasis on achieving the desired MOF functionality in a device and establishing the structure-property relationships to identify and rationalize the factors that impact device performance.

  1. Multilevel organization in hybrid thin films for optoelectronic applications.

    PubMed

    Vohra, Varun; Bolognesi, Alberto; Calzaferri, Gion; Botta, Chiara

    2009-10-20

    In this work we report two simple approaches to prepare hybrid thin films displaying a high concentration of zeolite crystals that could be used as active layers in optoelectronic devices. In the first approach, in order to organize nanodimensional zeolite crystals of 40 nm diameter in an electroactive environment, we chemically modify their external surface and play on the hydrophilic/hydrophobic forces. We obtain inorganic nanocrystals that self-organize in honeycomb electroluminescent polymer structures obtained by breath figure formation. The different functionalizations of the zeolite surface result in different organizations inside the cavities of the polymeric structure. The second approach involving soft-litography techniques allows one to arrange single dye-loaded zeolite L crystals of 800 nm of length by mechanical loading into the nanocavities of a conjugated polymer. Both techniques result in the formation of thin hybrid films displaying three levels of organization: organization of the dye molecules inside the zeolite nanochannels, organization of the zeolite crystals inside the polymer cavities, and micro- or nanostructuration of the polymer.

  2. Indium phosphide nanowires and their applications in optoelectronic devices

    PubMed Central

    Zafar, Fateen

    2016-01-01

    Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III–V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core–shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed. PMID:27118920

  3. Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing.

    PubMed

    Jariwala, Deep; Sangwan, Vinod K; Lauhon, Lincoln J; Marks, Tobin J; Hersam, Mark C

    2013-04-07

    In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in selected applications, issues surrounding structural inhomogeneity and imprecise assembly have impeded robust and reliable implementation of carbon nanomaterials in widespread technologies. However, with recent advances in synthesis, sorting, and assembly techniques, carbon nanomaterials are experiencing renewed interest as the basis of numerous scalable technologies. Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity samples. Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area. In this manner, this article will provide guidance to future application developers and also articulate the remaining research challenges confronting this field.

  4. Electronic and optoelectronic materials and devices inspired by nature

    NASA Astrophysics Data System (ADS)

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  5. Design of a high-resolution optoelectronic retinal prosthesis.

    PubMed

    Palanker, Daniel; Vankov, Alexander; Huie, Phil; Baccus, Stephen

    2005-03-01

    It has been demonstrated that electrical stimulation of the retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. However, current retinal implants provide very low resolution (just a few electrodes), whereas at least several thousand pixels would be required for functional restoration of sight. This paper presents the design of an optoelectronic retinal prosthetic system with a stimulating pixel density of up to 2500 pix mm(-2) (corresponding geometrically to a maximum visual acuity of 20/80). Requirements on proximity of neural cells to the stimulation electrodes are described as a function of the desired resolution. Two basic geometries of sub-retinal implants providing required proximity are presented: perforated membranes and protruding electrode arrays. To provide for natural eye scanning of the scene, rather than scanning with a head-mounted camera, the system operates similar to 'virtual reality' devices. An image from a video camera is projected by a goggle-mounted collimated infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. The goggles are transparent to visible light, thus allowing for the simultaneous use of remaining natural vision along with prosthetic stimulation. Optical delivery of visual information to the implant allows for real-time image processing adjustable to retinal architecture, as well as flexible control of image processing algorithms and stimulation parameters.

  6. Design of a high-resolution optoelectronic retinal prosthesis

    NASA Astrophysics Data System (ADS)

    Palanker, Daniel; Vankov, Alexander; Huie, Phil; Baccus, Stephen

    2005-03-01

    It has been demonstrated that electrical stimulation of the retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. However, current retinal implants provide very low resolution (just a few electrodes), whereas at least several thousand pixels would be required for functional restoration of sight. This paper presents the design of an optoelectronic retinal prosthetic system with a stimulating pixel density of up to 2500 pix mm-2 (corresponding geometrically to a maximum visual acuity of 20/80). Requirements on proximity of neural cells to the stimulation electrodes are described as a function of the desired resolution. Two basic geometries of sub-retinal implants providing required proximity are presented: perforated membranes and protruding electrode arrays. To provide for natural eye scanning of the scene, rather than scanning with a head-mounted camera, the system operates similar to 'virtual reality' devices. An image from a video camera is projected by a goggle-mounted collimated infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. The goggles are transparent to visible light, thus allowing for the simultaneous use of remaining natural vision along with prosthetic stimulation. Optical delivery of visual information to the implant allows for real-time image processing adjustable to retinal architecture, as well as flexible control of image processing algorithms and stimulation parameters.

  7. Optoelectronic Instrument Monitors pH in a Culture Medium

    NASA Technical Reports Server (NTRS)

    Anderson, Melody M.; Pellis, Neal; Jeevarajan, Anthony S.; Taylor, Thomas D.

    2004-01-01

    An optoelectronic instrument monitors the pH of an aqueous cell-culture medium in a perfused rotating-wall-vessel bioreactor. The instrument is designed to satisfy the following requirements: It should be able to measure the pH of the medium continuously with an accuracy of 0.1 in the range from 6.5 to 7.5. It should be noninvasive. Any material in contact with the culture medium should be sterilizable as well as nontoxic to the cells to be grown in the medium. The biofilm that inevitably grows on any surface in contact with the medium should not affect the accuracy of the pH measurement. It should be possible to obtain accurate measurements after only one calibration performed prior to a bioreactor cell run. The instrument should be small and lightweight. The instrument includes a quartz cuvette through which the culture medium flows as it is circulated through the bioreactor. The cuvette is sandwiched between light source on one side and a photodetector on the other side. The light source comprises a red and a green light-emitting diode (LED) that are repeatedly flashed in alternation with a cycle time of 5 s. The responses of the photodiode to the green and red LEDs are processed electronically to obtain a quantity proportional to the ratio between the amounts of green and red light transmitted through the medium.

  8. Technical quality assessment of an optoelectronic system for movement analysis

    NASA Astrophysics Data System (ADS)

    Di Marco, R.; Rossi, S.; Patanè, F.; Cappa, P.

    2015-02-01

    The Optoelectronic Systems (OS) are largely used in gait analysis to evaluate the motor performances of healthy subjects and patients. The accuracy of marker trajectories reconstruction depends on several aspects: the number of cameras, the dimension and position of the calibration volume, and the chosen calibration procedure. In this paper we propose a methodology to evaluate the effects of the mentioned sources of error on the reconstruction of marker trajectories. The novel contribution of the present work consists in the dimension of the tested calibration volumes, which is comparable with the ones normally used in gait analysis; in addition, to simulate trajectories during clinical gait analysis, we provide non-default paths for markers as inputs. Several calibration procedures are implemented and the same trial is processed with each calibration file, also considering different cameras configurations. The RMSEs between the measured trajectories and the optimal ones are calculated for each comparison. To investigate the significant differences between the computed indices, an ANOVA analysis is implemented. The RMSE is sensible to the variations of the considered calibration volume and the camera configurations and it is always inferior to 43 mm.

  9. New Schemes for Improved Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Yao, Steve; Ji, Yu; Ilchenko, Vladimir

    2000-01-01

    The opto-Electronic Oscillator (OEO) has already demonstrated superior spectral purity as a for microwave and millimeter wave reference signals. Experimental results have produced a performance characterized by noise as low as -50 dBc/Hz at 10 Hz and -140 dBc/Hz for a 10 GHz oscillator. This performance is significant because it was produced by an oscillator that was free running. Since the noise in an OEO is independent of the oscillation frequency, the same performance may also be obtained at higher frequency. The recent work in our laboratory has been focused in three areas: 1) realization of a compact OEO based on semiconductor lasers and modulators, 2) reduction of the close-to-carrier noise of the OEO originating from the 1/f noise of the amplifier, and 3) miniaturization of the OEO. In this paper we report on progress made in these areas, and describe future plans to increase the performance and the efficiency of the OEO.

  10. Prospects of III-nitride optoelectronics grown on Si.

    PubMed

    Zhu, D; Wallis, D J; Humphreys, C J

    2013-10-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures.

  11. Optoelectronic Chaos in a Simple Light Activated Feedback Circuit

    NASA Astrophysics Data System (ADS)

    Joiner, K. L.; Palmero, F.; Carretero-González, R.

    The nonlinear dynamics of an optoelectronic negative feedback switching circuit is studied. The circuit, composed of a bulb, a photoresistor, a thyristor and a linear resistor, corresponds to a nightlight device whose light is looped back into its light sensor. Periodic bifurcations and deterministic chaos are obtained by the feedback loop created when the thyristor switches on the bulb in the absence of light being detected by the photoresistor and the bulb light is then looped back into the nightlight to switch it off. The experimental signal is analyzed using tools of delay-embedding reconstruction that yield a reconstructed attractor with fractional dimension and positive Lyapunov exponent suggesting chaotic behavior for some parameter values. We construct a simple circuit model reproducing experimental results that qualitatively matches the different dynamical regimes of the experimental apparatus. In particular, we observe an order-chaos-order transition as the strength of the feedback is varied corresponding to varying the distance between the nightlight bulb and its photo-detector. A two-dimensional parameter diagram of the model reveals that the order-chaos-order transition is generic for this system.

  12. Organic non-linear optics and opto-electronics

    NASA Astrophysics Data System (ADS)

    Maldonado, J. L.; Ramos-Ortíz, G.; Rodríguez, M.; Meneses-Nava, M. A.; Barbosa-García, O.; Santillán, R.; Farfán, N.

    2010-12-01

    π-conjugated organic molecules and polymers are of great importance in physics, chemistry, material science and engineering. It is expected that, in the near future, organic materials will find widespread use in many technological applications. In the case of organic opto-electronic systems, the list of devices includes light emitting diodes (OLEDs), photovoltaic cells (OPVs), field-effect transistors (OFET), photorefractive materials for light manipulation, among others. These materials are also used for photonic applications: all-optical switching, modulators, optical correlators, plastic waveguides, all polymeric integrated circuits, solid-state lasers, and for biophotonic applications as in the case of the development of organic labels for multiphoton microscopy and photodynamic therapy. The advances in the developing of organic compounds with better mechanical, electrical, and optical (linear and non-linear) characteristics are of a great importance for this field. Here, we present the research on this area carried out at the Centro de Investigaciones en Óp-tica (CIO), in collaboration with Chemistry Departments of different institutions. This work focuses on the optical characterization of materials through several techniques such as TOF, FWM, TBC, THG Maker Fringes, HRS, Z-scan, and TPEF. Additionally, some applications, such as dynamic holography by using photorefractive polymers, and OPVs cells will be discussed.

  13. Optoelectronic parallel processing with smart pixel arrays for automated screening of cervical smear imagery

    NASA Astrophysics Data System (ADS)

    Metz, John Langdon

    2000-10-01

    This thesis investigates the use of optoelectronic parallel processing systems with smart photosensor arrays (SPAs) to examine cervical smear images. The automation of cervical smear screening seeks to reduce human workload and improve the accuracy of detecting pre- cancerous and cancerous conditions. Increasing the parallelism of image processing improves the speed and accuracy of locating regions-of-interest (ROI) from images of the cervical smear for the first stage of a two-stage screening system. The two-stage approach first detects ROI optoelectronically before classifying them using more time consuming electronic algorithms. The optoelectronic hit/miss transform (HMT) is computed using gray scale modulation spatial light modulators in an optical correlator. To further the parallelism of this system, a novel CMOS SPA computes the post processing steps required by the HMT algorithm. The SPA reduces the subsequent bandwidth passed into the second, electronic image processing stage classifying the detected ROI. Limitations in the miss operation of the HMT suggest using only the hit operation for detecting ROI. This makes possible a single SPA chip approach using only the hit operation for ROI detection which may replace the optoelectronic correlator in the screening system. Both the HMT SPA postprocessor and the SPA ROI detector design provide compact, efficient, and low-cost optoelectronic solutions to performing ROI detection on cervical smears. Analysis of optoelectronic ROI detection with electronic ROI classification shows these systems have the potential to perform at, or above, the current error rates for manual classification of cervical smears.

  14. Chip scale low dimensional materials: optoelectronics & nonlinear optics

    NASA Astrophysics Data System (ADS)

    Gu, Tingyi

    The CMOS foundry infrastructure enables integration of high density, high performance optical transceivers. We developed integrated devices that assemble resonators, waveguide, tapered couplers, pn junction and electrodes. Not only the volume standard manufacture in silicon foundry is promising to low-lost optical components operating at IR and mid-IR range, it also provides a robust platform for revealing new physical phenomenon. The thesis starts from comparison between photonic crystal and micro-ring resonators based on chip routers, showing photonic crystal switches have small footprint, consume low operation power, but its higher linear loss may require extra energy for signal amplification. Different designs are employed in their implementation in optical signal routing on chip. The second part of chapter 2 reviews the graphene based optoelectronic devices, such as modulators, lasers, switches and detectors, potential for group IV optoelectronic integrated circuits (OEIC). In chapter 3, the highly efficient thermal optic control could act as on-chip switches and (transmittance) tunable filters. Local temperature tuning compensates the wavelength differences between two resonances, and separate electrode is used for fine tuning of optical pathways between two resonators. In frequency domain, the two cavity system also serves as an optical analogue of Autler-Towns splitting, where the cavity-cavity resonance detuning is controlled by the length of pathway (phase) between them. The high thermal sensitivity of cavity resonance also effectively reflects the heat distribution around the nanoheaters, and thus derives the thermal conductivity in the planar porous suspended silicon membrane. Chapter 4 & 5 analyze graphene-silicon photonic crystal cavities with high Q and small mode volume. With negligible nonlinear response to the milliwatt laser excitation, the monolithic silicon PhC turns into highly nonlinear after transferring the single layer graphene with

  15. Thin film technologies for optoelectronic components in fiber optic communication

    NASA Astrophysics Data System (ADS)

    Perinati, Agostino

    1998-02-01

    will grow at an annual average rate of 22 percent from 1.3 million fiber-km in 1995 to 3.5 million fiber-km in 2000. The worldwide components market-cable, transceivers and connectors - 6.1 billion in 1994, is forecasted to grow and show a 19 percent combined annual growth rate through the year 2000 when is predicted to reach 17.38 billion. Fiber-in-the-loop and widespread use of switched digital services will dominate this scenario being the fiber the best medium for transmitting multimedia services. As long as communication will partially replace transportation, multimedia services will push forward technology for systems and related components not only for higher performances but for lower cost too in order to get the consumers wanting to buy the new services. In the long distance transmission area (trunk network) higher integration of electronic and optoelectronic functions are required for transmitter and receiver in order to allow for higher system speed, moving from 2.5 Gb/s to 5, 10, 40 Gb/s; narrow band wavelength division multiplexing (WDM) filters are required for higher transmission capacity through multiwavelength technique and for optical amplifier. In the access area (distribution network) passive components as splitters, couplers, filters are needed together with optical amplifiers and transceivers for point-to-multipoint optical signal distribution: main issue in this area is the total cost to be paid by the customer for basic and new services. Multimedia services evolution, through fiber to the home and to the desktop approach, will be mainly affected by the availability of technologies suitable for component consistent integration, high yield manufacturing processes and final low cost. In this paper some of the optoelectronic components and related thin film technologies expected to mainly affect the fiber optic transmission evolution, either for long distance telecommunication systems or for subscriber network, are presented.

  16. Atomic Clock Based on Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Yu, Nan

    2005-01-01

    A proposed highly accurate clock or oscillator would be based on the concept of an opto-electronic oscillator (OEO) stabilized to an atomic transition. Opto-electronic oscillators, which have been described in a number of prior NASA Tech Briefs articles, generate signals at frequencies in the gigahertz range characterized by high spectral purity but not by longterm stability or accuracy. On the other hand, the signals generated by previously developed atomic clocks are characterized by long-term stability and accuracy but not by spectral purity. The proposed atomic clock would provide high spectral purity plus long-term stability and accuracy a combination of characteristics needed to realize advanced developments in communications and navigation. In addition, it should be possible to miniaturize the proposed atomic clock. When a laser beam is modulated by a microwave signal and applied to a photodetector, the electrical output of the photodetector includes a component at the microwave frequency. In atomic clocks of a type known as Raman clocks or coherent-population-trapping (CPT) clocks, microwave outputs are obtained from laser beams modulated, in each case, to create two sidebands that differ in frequency by the amount of a hyperfine transition in the ground state of atoms of an element in vapor form in a cell. The combination of these sidebands produces a transparency in the population of a higher electronic level that can be reached from either of the two ground-state hyperfine levels by absorption of a photon. The beam is transmitted through the vapor to a photodetector. The components of light scattered or transmitted by the atoms in the two hyperfine levels mix in the photodetector and thereby give rise to a signal at the hyperfine- transition frequency. The proposed atomic clock would include an OEO and a rubidium- or cesium- vapor cell operating in the CPT/Raman regime (see figure). In the OEO portion of this atomic clock, as in a typical prior OEO, a

  17. Optoelectronic blood oximetry as a tool of health safety monitoring

    NASA Astrophysics Data System (ADS)

    Cysewska-Sobusiak, Anna

    2001-08-01

    A metrological approach of some selected problems connected with the significant field of biomedical optics i.e., monitoring of arterial blood oxygenation by use of the tissues as optical media exposed to the controlled light action, has been presented. The subject of the measurements based on utilization of the selection absorption properties of blood is the hemoglobin oxygen saturation. Using optoelectronic sensing allows to convert sophisticated effects of noninvasive light-living tissue interaction to electrical signals which may be convenient to measure. Pulse oximetry which is based upon such a way of sensing and processing, is the recent advance in noninvasive oximetry. The unique advantages of that marvelous diagnostic technique have caused to recommend pulse oximeters as standard equipment in intensive care and other critical situations impending hypoxemia appearance. However, end-users of the pulse oximeters not always are aware of that these devices fall under specific limitations, of both physiological and technical nature. The author of this paper is a metrologist and deals mainly with various interdisciplinary problems of a measurement reliability including the aspects such as uncertainty of an outcome accessible to the user, causes affecting sensitivity, resolution and repeatability of processing function, and response time and stability of results. Referring to the subject discussed herein, and taking into account some open questions, the author's contribution is her own experience in modeling as well as in in vivo measuring of transilluminated living objects. A proposed novel use of the known pulse oximetry concept may be considered as complementary results against a general review background of the achievements obtained in oximetry as the state-of-the-art, and furthermore, the developing studies which are still in progress.

  18. Optoelectronic properties of semiconducting polymers and related applications

    NASA Astrophysics Data System (ADS)

    Wang, Jian

    2000-10-01

    Since the discovery of semiconducting (conjugated) polymers in 1977 by Heeger, MacDiarmid and Shirakawa, a wide variety of electrical and optical devices have been developed using semiconducting polymers, such as light-emitting diodes, photodetectors, and fluorescent biosensors. All the devices are based on the electro-optical or optoelectronic properties of conjugated polymers. So understanding the fundamental electronic structures is of particular importance. A general picture of electronic excitation of PPV upon photoexcitation remains a subject of intense debate. I addressed this problem by studying the photoconductivity excitation profile of aligned PPV sample with polarized light parallel and perpendicular to the chain axis. The spectral signature of the exciton is observed in the excitation profile as a narrow peak that emerges just below the band edge upon increasing the external field, the defect density or the temperature. The exciton binding energy is obtained from the energy of the narrow exciton peak with respect to the band edge, and independently, from analysis of the field dependence and temperature dependence of the exciton dissociation: Eb ˜ 60 meV. The fluorescence quenching of luminescent polymers by electron acceptors through photoinduced charge transfer opens a new opportunity for conjugated polymers in biological and chemical sensors for use in medical diagnostics and toxicology. A comprehensive studies of the quenching mechanisms in two polymer:quencher systems in solutions are presented. The basic quenching mode is identified by carefully studying the buffer ions' effects, absorption profile, and temperature effects. Finally, an application of photodetector utilizing conjugated polymers is presented. A large area photodetector is demonstrated to have true color (24 bit) resolution.

  19. Adhesion of functional layer on polymeric substrates for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Amendola, E.; Cammarano, A.; Pezzuto, M.; Acierno, D.

    2009-06-01

    The use of plastic film substrates for organic electronic devices promises to enable new applications, such as flexible displays. Plastic substrates have several distinct advantages, such as ruggedness, robustness, ultra lightness, conformability and impact resistance over glass substrates, which are primarily used in flat panel displays (FPDs) today. However, high transparency, proper surface roughness, low gas permeability and high transparent electrode conductivity of the plastic substrate are required for commercial applications. Polyesters, both amorphous and semicrystalline, are a promising class of commercial polymer for optoelectronic applications. Surface modification of polyester films was performed via chemical solution determining hydrolysis or oxidation. Hydrolysis was carried out by means of sodium hydroxide solution and oxidation by using standard clean 1 (SC-1) of RCA procedure [1]. For this work we have used commercial polymer films of 100μm in thickness: AryLite [2], supplied by Ferrania Imaging Technologies S.p.A. and characterised by very high glass transition temperature, Mylar (Polyethylene Terephthalate PET) and Teonex (Polyethylene Naphthalate PEN) both supplied by Dupont. More over, a bioriented and semicrystalline PET have been used. The aim of this study is modifying the polymer surface to improve the adhesion between organic-inorganic layer. It was found that the NaOH and SC-1 treatment cause a decrease of contact angles. In the present study we have deposited a thin films of amorphous hydrogenated silicon (a-Si:H) and its oxide (SiO2) on a new high temperature polymer substrate, AryLite, by plasma enhanced chemical vapour deposition (PECVD) [3], with a radio frequency plasma system.

  20. Optoelectronic properties of dicyanofluorene-based n-type polymers.

    PubMed

    Vijayakumar, Chakkooth; Saeki, Akinori; Seki, Shu

    2012-08-01

    Three new donor-acceptor-type copolymers (P1-P3) consisting of dicyanofluorene as acceptor and various donor moieties were designed and synthesized. Optoelectronic properties were studied in detail by means of UV-visible absorption and fluorescence spectroscopy, cyclic voltammetry, space-charge-limited current (SCLC), flash-photolysis time-resolved microwave conductivity (FP-TRMC), and density functional theory (DFT). All polymers showed strong absorption in the UV-visible region and the absorption maximum undergoes redshift with an increasing number of thiophene units in the polymer backbone. SCLC analysis showed that the electron mobilities of the polymers in the bulk state were 1 to 2 orders higher than that of the corresponding hole mobilities, which indicated the n-type nature of the materials. By using FP-TRMC, the intrapolymer charge-carrier mobility was assessed and compared with the interpolymer mobility obtained by SCLC. The polymers exhibited good electron-accepting properties sufficiently high enough to oxidize the excited states of regioregular poly(3-hexylthiophene) (P3HT (donor)), as evident from the FP-TRMC analysis. The P3 polymer exhibited the highest FP-TRMC transients in the pristine form as well as when blended with P3HT. Use of these polymers as n-type materials in all-polymer organic solar cells was also explored in combination with P3HT. In accordance with the TRMC results, P3 exhibited superior electron-transport and photovoltaic properties to the other two polymers, which is explained by the distribution of the energy levels of the polymers by using DFT calculations.

  1. Development of optoelectronic monitoring system for ear arterial pressure waveforms

    NASA Astrophysics Data System (ADS)

    Sasayama, Satoshi; Imachi, Yu; Yagi, Tamotsu; Imachi, Kou; Ono, Toshirou; Man-i, Masando

    1994-02-01

    Invasive intra-arterial blood pressure measurement is the most accurate method but not practical if the subject is in motion. The apparatus developed by Wesseling et al., based on a volume-clamp method of Penaz (Finapres), is able to monitor continuous finger arterial pressure waveforms noninvasively. The limitation of Finapres is the difficulty in measuring the pressure of a subject during work that involves finger or arm action. Because the Finapres detector is attached to subject's finger, the measurements are affected by inertia of blood and hydrostatic effect cause by arm or finger motion. To overcome this problem, the authors made a detector that is attached to subject's ear and developed and optoelectronic monitoring systems for ear arterial pressure waveform (Earpres). An IR LEDs, photodiode, and air cuff comprised the detector. The detector was attached to a subject's ear, and the space adjusted between the air cuff and the rubber plate on which the LED and photodiode were positioned. To evaluate the accuracy of Earpres, the following tests were conducted with participation of 10 healthy male volunteers. The subjects rested for about five minutes, then performed standing and squatting exercises to provide wide ranges of systolic and diastolic arterial pressure. Intra- and inter-individual standard errors were calculated according to the method of van Egmond et al. As a result, average, the averages of intra-individual standard errors for earpres appeared small (3.7 and 2.7 mmHg for systolic and diastolic pressure respectively). The inter-individual standard errors for Earpres were about the same was Finapres for both systolic and diastolic pressure. The results showed the ear monitor was reliable in measuring arterial blood pressure waveforms and might be applicable to various fields such as sports medicine and ergonomics.

  2. Optoelectronic properties of nanostructured ensembles controlled by biomolecular logic systems.

    PubMed

    Pita, Marcos; Krämer, Melina; Zhou, Jian; Poghossian, Arshak; Schöning, Michael J; Fernández, Víctor M; Katz, Evgeny

    2008-10-28

    A nanostructured system composed of enzyme-functionalized silica microparticles, ca. 74 microm, and gold-coated magnetic nanoparticles, 18 +/- 3 nm, modified with pH-sensitive organic shells was used to process biochemical signals and transduce the output signal into the changes of the optoelectronic properties of the assembly. The enzymes (glucose oxidase, invertase, esterase) covalently bound to the silica microparticles performed Boolean logic operations AND/OR processing biochemical information received in the form of chemical input signals resulting in changes of the solution pH value. Dissociation state of the organic shells on the gold-coated magnetic nanoparticles was controlled by pH changes generated in situ by the enzyme logic systems. The charge variation on the organic shells upon the reversible protonation/dissociation process resulted in the changes of the gold layer localized surface plasmon resonance energy (LSPR), thus producing optical changes in the system. The proton transfer process allowed the functional coupling of the information processing enzyme systems with the signal transducing gold-coated magnetic nanoparticles providing their cooperative performance. Magnetic properties of the gold-coated magnetic nanoparticles allowed separation of the signal-transducing nanoparticles from the enzyme-modified signal processing silica microparticles. The reversible system operation was achieved by the Reset function, returning the pH value and optical properties of the system to the initial state. This process was biocatalyzed by another immobilized enzyme (urease) activated with a biochemical signal. The studied approach opens the way to novel optical biosensors logically processing multiple biochemical signals and "smart" multisignal responsive materials with logically switchable optical properties.

  3. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    SciTech Connect

    Wang, Hsin-Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; Hettick, Mark; Zheng, Maxwell; Lien, Der-Hsien; Miller, D. Westley; Warren, Charles W.; Roe, Ellis T.; Lonergan, Mark C.; Guthrey, Harvey L.; Haegel, Nancy M.; Ager, Joel W.; Carraro, Carlo; Maboudian, Roya; He, Jr-Hau; Javey, Ali

    2016-07-12

    The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy was used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the relative intragap defect density by 1 order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV and reduced the variance in VOC for the analyzed devices.

  4. Tracking control strategy for the optoelectronic system on the flexible suspended platform based on backstepping method

    NASA Astrophysics Data System (ADS)

    Yu, Wei; Ma, Jiaguang; Xiao, Jing

    2012-10-01

    To improve the optoelectronic tracking ability and rope-hanged platform attitude stability, against the interact effect between rope-hanged platform and optoelectronic system during system tracking process, the optoelectronic system fixed on rope hanged platform simplified dynamic model, according to the system's Lagrange dynamic model, was established. Backstepping method was employed to design an integrated controller for both optoelectronic system azimuth direction steering and platform attitude stabilizing. To deal with model's uncertainty and disturbance, a sliding mode controller form based exponential reaching law was adopted to structure the integrated controller. Simulation experiments simulated an optoelectronic system with 600mm caliber telescope, whose inertia fluctuation is 6%. The maximal control moment is 15Nm. And the external disturbance and internal friction effected together. When the line of sight(LOS) azimuth angular input is a step signal with 1rad amplitude, the response's overshoot is 6%, and the response time is 6.2s, and the steady state error is less than 4×10-4rad. When the input is a sinusoidal signal of 0.2rad amplitude with 0.0318Hz frequency, the LOS azimuth angular error amplitude is 5. 6×10-4rad. It is concluded that the controller designed in this article has excellent ability and can ensure the system's stability.

  5. Nonlinear optical and optoelectronic studies of topological insulator surfaces

    NASA Astrophysics Data System (ADS)

    McIver, James W.

    Since their experimental discovery in 2008, topological insulators have been catapulted to the forefront of condensed matter physics research owing to their potential to realize both exciting new technologies as well as novel electronic phases that are inaccessible in any other material class. Their exotic properties arise from a rare quantum organization of its electrons called "topological order,'' which evades the conventional broken symmetry based-classification scheme used to categorize nearly every other state of ordered matter. Instead, topologically ordered phases are classified by topological invariants, which characterize the phase of an electron's wavefunction as it moves through momentum space. When a topologically ordered phase is interfaced with an ordinary phase, such as the vacuum, a novel metallic state appears at their shared boundary. In topological insulators, this results in the formation of a two-dimensional metallic state that spans all of its surfaces. The surface state electronic spectrum is characterized by a single linearly dispersing and helically spin-polarized Dirac cone that is robust against disorder. The helical nature of the surface Dirac cone is highly novel because the Dirac electrons carry a net magnetic moment and are capable of transporting 100% spin-polarized electrical currents, which are the long-sought electronic properties needed for many spin-based electronic applications. However, owing to the small bulk band gap and intrinsic electronic doping inherent to these materials, isolating the surface electronic response from the bulk has proven to be a major experimental obstacle. In this thesis, we demonstrate the means by which light can be used to isolate and study the surface electronic response of topological insulators using optoelectronic and nonlinear optical techniques. In chapter 1, we overview the physics of topological order and topological insulators. In chapter 2, we show how polarized light can be used to

  6. Investigations in optoelectronic image processing in scanning laser microscopy

    NASA Astrophysics Data System (ADS)

    Chaliha, Hiranya Kumar

    based recording and measurement of optoelectronic signal from the detector in scanning system has also been designed. Chapter 2, Part B describes the details of this microprocessor based recording system. In Chapter 3, we have investigated different image processing modes in search for novel information, better resolution and more faithful frequency content of image after a brief introduction of the advances already made in this field. Coded aperture processing close to focused spot of laser.

  7. Optoelectronic Tool Adds Scale Marks to Photographic Images

    NASA Technical Reports Server (NTRS)

    Stevenson, Charlie; Rivera, Jorge; Youngquist, Robert; Cox, Robert; Haskell, William

    2003-01-01

    A simple, easy-to-use optoelectronic tool projects scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The role played by the scale marks projected by this tool is the same as that of the scale marks on a ruler placed in a scene for the purpose of establishing a length scale. However, this tool offers the advantage that it can put scale marks quickly and safely in any visible location, including a location in which placement of a ruler would be difficult, unsafe, or time-consuming. The tool (see Figure 1) includes an aluminum housing, within which are mounted four laser diodes that operate at a wavelength of 670 nm. The laser diodes are spaced 1 in. (2.54 cm) apart along a baseline. The laser diodes are mounted with setscrews, which are used to adjust their beams to make them all parallel to each other and perpendicular to the baseline. During the adjustment process, the effect of the adjustments is observed by measuring the positions of the laser-beam spots on a target 80 ft (approx.24 m) away. Once the adjustments have been completed, the laser beams define three 1-in. (2.54-cm) intervals and the location of each beam is defined to within 1/16 in. (approx.1.6 mm) at any target distance out to about 80 ft (approx.24 m). The distance between the laser-beam spots as seen in an image is strictly defined only along an axis parallel to the baseline and perpendicular to the laser beam (also perpendicular to the line of sight of the camera, assuming that the camera-to-target distance is much greater than the distance between the tool and the camera lens). If a flat target surface illuminated by the laser beams is tilted with respect to the aforesaid axis, then the distance along the target surface between scale marks is proportional to the secant of the tilt angle. If one knows the tilt angle, one can correct for it. Even

  8. Mapping and manipulating optoelectronic processes in emerging photovoltaic materials

    NASA Astrophysics Data System (ADS)

    Leblebici, Sibel Yontz

    The goal of the work in this dissertation is to understand and overcome the limiting optoelectronic processes in emerging second generation photovoltaic devices. There is an urgent need to mitigate global climate change by reducing greenhouse gas emissions. Renewable energy from photovoltaics has great potential to reduce emissions if the energy to manufacture the solar cell is much lower than the energy the solar cell generates. Two emerging thin film solar cell materials, organic semiconductors and hybrid organic-inorganic perovskites, meet this requirement because the active layers are processed at low temperatures, e.g. 150 °C. Other advantages of these two classes of materials include solution processability, composted of abundant materials, strongly light absorbing, highly tunable bandgaps, and low cost. Organic solar cells have evolved significantly from 1% efficient devices in 1989 to 11% efficient devices today. Although organic semiconductors are highly tunable and inexpensive, the main challenges to overcome are the large exciton binding energies and poor understanding of exciton dynamics. In my thesis, I optimized solar cells based on three new solution processable azadipyrromethene-based small molecules. I used the highest performing molecule to study the effect of increasing the permittivity of the material by incorporating a high permittivity small molecule into the active layer. The studies on two model systems, small donor molecules and a polymer-fullerene bulk heterojunction, show that Frenkel and charge transfer exciton binding energies can be manipulated by controlling permittivity, which impacts the solar cell efficiency. Hybrid organic-inorganic perovskite materials have similar advantages to organic semiconductors, but they are not excitonic, which is an added advantage for these materials. Although photovoltaics based on hybrid halide perovskite materials have exceeded 20% efficiency in only a few years of optimization, the loss mechanisms

  9. Computational design of surfaces, nanostructures and optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Choudhary, Kamal

    Properties of engineering materials are generally influenced by defects such as point defects (vacancies, interstitials, substitutional defects), line defects (dislocations), planar defects (grain boundaries, free surfaces/nanostructures, interfaces, stacking faults) and volume defects (voids). Classical physics based molecular dynamics and quantum physics based density functional theory can be useful in designing materials with controlled defect properties. In this thesis, empirical potential based molecular dynamics was used to study the surface modification of polymers due to energetic polyatomic ion, thermodynamics and mechanics of metal-ceramic interfaces and nanostructures, while density functional theory was used to screen substituents in optoelectronic materials. Firstly, polyatomic ion-beams were deposited on polymer surfaces and the resulting chemical modifications of the surface were examined. In particular, S, SC and SH were deposited on amorphous polystyrene (PS), and C2H, CH3, and C3H5 were deposited on amorphous poly (methyl methacrylate) (PMMA) using molecular dynamics simulations with classical reactive empirical many-body (REBO) potentials. The objective of this work was to elucidate the mechanisms by which the polymer surface modification took place. The results of the work could be used in tailoring the incident energy and/or constituents of ion beam for obtaining a particular chemistry inside the polymer surface. Secondly, a new Al-O-N empirical potential was developed within the charge optimized many body (COMB) formalism. This potential was then used to examine the thermodynamic stability of interfaces and mechanical properties of nanostructures composed of aluminum, its oxide and its nitride. The potentials were tested for these materials based on surface energies, defect energies, bulk phase stability, the mechanical properties of the most stable bulk phase, its phonon properties as well as with a genetic algorithm based evolution theory of

  10. Equalization With Oversampling in Multiuser CDMA Systems

    DTIC Science & Technology

    2007-11-02

    A Mutually-Orthogonal Usercode-Receiver ( AMOUR ) for asynchronous or quasi-synchronous CDMA systems. AMOUR converts a multiuser CDMA system into...of improving the performance of AMOUR systems. They design Fractionally-Spaced AMOUR (FSAMOUR) receivers with integral and rational amounts of...practically guaranteed. They exploit this flexibility in the design of AMOUR and FSAMOUR receivers and achieve noticeable improvements in performance. (11 figures, 23 refs.)

  11. Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

    PubMed Central

    Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

    2016-01-01

    Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures. PMID:28335321

  12. Standard cell-based implementation of a digital optoelectronic neural-network hardware.

    PubMed

    Maier, K D; Beckstein, C; Blickhan, R; Erhard, W

    2001-03-10

    A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.

  13. Standard Cell-Based Implementation of a Digital Optoelectronic Neural-Network Hardware

    NASA Astrophysics Data System (ADS)

    Maier, Klaus D.; Beckstein, Clemens; Blickhan, Reinhard; Erhard, Werner

    2001-03-01

    A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.

  14. Light-driven strong spin valve effects in an azobenzene-based spin optoelectronic device

    NASA Astrophysics Data System (ADS)

    Zeng, Jing; Chen, Ke-Qiu; Deng, Xiaohui; Long, Mengqiu

    2016-10-01

    A photoswitched single-molecule junction, a stable and reversible single-molecule electrical switch, has been successfully prepared by means of molecular engineering (2016 Science 352 1443). In this work we use a first-principles computational approach to investigate the spin valve effect of an azobenzene-based spin optoelectronic device. Our results demonstrate that the magnetoresistive ratio of the spin optoelectronic device is only about 65% when the azobenzene is in cis configuration, which is a low performance for practical applications. However, the magnetoresistive ratio of the device can be enhanced to about 2775% when the cis configuration of the azobenzene is changed into the trans configuration by applying a pulse of light. As a consequence, photoexcitation provides an effective way to obtain a high-performance spin optoelectronic device.

  15. Chaotic dynamics and synchronization in microchip solid-state lasers with optoelectronic feedback.

    PubMed

    Uchida, Atsushi; Mizumura, Keisuke; Yoshimori, Shigeru

    2006-12-01

    We experimentally observe the dynamics of a two-mode Nd:YVO4 microchip solid-state laser with optoelectronic feedback. The total laser output is detected and fed back to the injection current of the laser diode for pumping. Chaotic oscillations are observed in the microchip laser with optoelectronic self-feedback. We also observe the dynamics of two microchip lasers coupled mutually with optoelectronic link. The output of one laser is detected by a photodiode and the electronic signal converted from the laser output is sent to the pumping of the other laser. Chaotic fluctuation of the laser output is observed when the relaxation oscillation frequency is close to each other between the two microchip lasers. Synchronization of periodic wave form is also obtained when the microchip lasers have a single-longitudinal mode.

  16. Highly conductive transparent organic electrodes with multilayer structures for rigid and flexible optoelectronics.

    PubMed

    Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

    2015-05-27

    Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric-metal-dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq(-1) at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices.

  17. Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

    PubMed

    Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

    2014-12-21

    While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

  18. Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

    SciTech Connect

    Tripathi, Madhvendra Nath

    2015-06-24

    Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In{sub 32-x}Sn{sub x}O{sub 48+x/2}; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom of conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.

  19. Accelerating tomorrow's opto-electronic technologies: a comprehensive introduction to advanced optoelectronic materials and devices in the National Hi-Tech R&D Plan (863-Plan)

    NASA Astrophysics Data System (ADS)

    Jiang, Shan; Chen, Haoming; Ren, Xiaomin; Wang, Zhigong; Qian, Longsheng; Zhang, Rong; Feng, Songlin; Yang, Hui; Xu, Ningsheng

    2004-05-01

    The National Hi-Tech R&D Program (the 863-Program) is to enhance China's international competitiveness and improve China's overall capability of R&D in high technology and to bridge the gap between the laboratory and the marketplace. Advanced Optoelectronic Materials and Devices are one of the technology areas strategically important to China's information industry. It has been one of the major priority research fields funded by the 863 Program even since 1987 when the plan was first initiated. From the viewpoint of Priority Expert Group (PEG), this paper will give a comprehensive introduction to advanced optoelectronic materials and devices in the national 863-Program during the current five years period (up to 2005) which includes the main aims and goals and especially the main content of each subject.

  20. Optoelectronic-based face recognition versus electronic PCA-based face recognition

    NASA Astrophysics Data System (ADS)

    Alsamman, A.

    2003-11-01

    Face recognition based on principal component analysis (PCA) using eigenfaces is popular in face recognition markets. In this paper we present a comparison between various optoelectronic face recognition techniques and principal component analysis (PCA) based technique for face recognition. Computer simulations are used to study the effectiveness of PCA based technique especially for facial images with a high level of distortion. Results are then compared to various distortion-invariant optoelectronic face recognition algorithms such as synthetic discriminant functions (SDF), projection-slice SDF, optical correlator based neural networks, and pose estimation based correlation.

  1. A new switching parameter varying optoelectronic delayed feedback model with computer simulation

    PubMed Central

    Liu, Lingfeng; Miao, Suoxia; Cheng, Mengfan; Gao, Xiaojing

    2016-01-01

    In this paper, a new switching parameter varying optoelectronic delayed feedback model is proposed and analyzed by computer simulation. This model is switching between two parameter varying optoelectronic delayed feedback models based on chaotic pseudorandom sequences. Complexity performance results show that this model has a high complexity compared to the original model. Furthermore, this model can conceal the time delay effectively against the auto-correlation function, delayed mutual information and permutation information analysis methods, and can extent the key space, which greatly improve its security. PMID:26923101

  2. Phase drift cancellation of remote radio frequency transfer using an optoelectronic delay-locked loop.

    PubMed

    Zhang, Lumin; Chang, Le; Dong, Yi; Xie, Weilin; He, Hao; Hu, Weisheng

    2011-03-15

    In this Letter, we propose a phase drift cancellation method for remote radio frequency transfer. Phase fluctuation along the transmission fiber, which is induced by temperature and pressure changes, is measured and compensated by a heterodyne optoelectronic delay-locked loop. The control loop consists of a heterodyne optoelectronic phase detector, a microwave delay module, and the loop filter. We demonstrate the concept by transmitting a 10 GHz microwave frequency over 50 km single-mode fiber, with subpicosecond jitters measured at the remote end.

  3. Semiconductor laser amplifier and its optoelectronic properties for application in lightwave communication systems

    NASA Astrophysics Data System (ADS)

    Luc, V. V.; Eliseev, Petr G.; Man'ko, M. A.; Tsotsoriya, M. V.

    1992-12-01

    Output power and fiber-to-fiber gain along with infernal gain of the active element and optoelectronic signal curves at different values of input power versus pumping current are measured for the amplifier modules on the base of AR-coated InGaAsP/InP BH diodes. It is shown that diagnostics of the amplifier module oper''ation regime may be performed by voltage measurements and the optoelectronic signal can be used to monitor optical information passage in the regenerator device or for the distributed access the data transmitted in the lightwave comrnunicat ion systems. I.

  4. Fundamental properties of PTCDI-C8 semiconductor for optoelectronic and photonic applications

    NASA Astrophysics Data System (ADS)

    Erdoǧan, Erman; Gündüz, Bayram

    2017-02-01

    In this study, we investigated fundamental properties such as electrical and optical properties of the N,N'-Dioctyl-3,4,9,10 perylenedicarboximide (PTCDI-C8) Organic Semiconductor (OSC) material for optoelectronic and photonic applications. The important spectral parameters such as mass extinction coefficient and transmittance spectrum of the PTCDI-C8 molecule were calculated. Optical properties such as refractive index, optical band gap, real and imaginary parts of dielectric constants of the PTCDI-C8 were obtained. The electrical and optical conductance properties were also investigated. The advantages and disadvantages of obtained fundamental parameters were determined for optoelectronic and photonic applications.

  5. WARRP Core: Optoelectronic Implementation of Network-Router Deadlock-Handling Mechanisms.

    PubMed

    Pinkston, T M; Raksapatcharawong, M; Choi, Y

    1998-01-10

    The wormhole adaptive recovery-based routing via pre-emption(WARRP) core optoelectronic chip, which integrates coredeadlock-handling circuitry for a fully adaptive deadlock-freemultiprocessor network router, is presented. This chip demonstratesprimarily the integration of complex deadlock-recovery circuitry andfree-space optoelectronic input-output on a monolithicGaAs-based chip. The design and implementation of thefirst-generation, bit-serial, torus-connected chip that uses 1400transistors and six light-emitting diode-photodetector pairs is presented.

  6. Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO2 Film.

    PubMed

    Fan, Lele; Chen, Yuliang; Liu, Qianghu; Chen, Shi; Zhu, Lei; Meng, Qiangqiang; Wang, Baolin; Zhang, Qinfang; Ren, Hui; Zou, Chongwen

    2016-12-07

    In this work, high-quality VO2 epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO2/GaN film device, we observed that the infrared transmittance and resistance of VO2 films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO2 in infrared range, an optoelectronic memory device was achieved. This memory device was operated under the "electrical writing-optical reading" mode, which shows promising applications in VO2-based optoelectronic device in the future.

  7. Piezophototronic Effect in Single-Atomic-Layer MoS 2 for Strain-Gated Flexible Optoelectronics

    SciTech Connect

    Wu, Wenzhuo; Wang, Lei; Yu, Ruomeng; Liu, Yuanyue; Wei, Su-Huai; Hone, James; Wang, Zhong Lin

    2016-08-03

    Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

  8. [Optoelectronic plethysmography -- a new technic to measure changes of chest wall volume].

    PubMed

    Skoczylas, Agnieszka; Sliwiński, Paweł

    2007-01-01

    Optoelectronic plethysmography (OEP) is a new, noninvasive diagnostic tool that allows to measure changes of chest wall volume and its three compartments. Mathematical basis of the method, elements of the system and possibilities of combining OEP with other recording techniques used in pneumonology were discussed in details. OEP applications, results of the latest investigations and development perspectives were briefly presented.

  9. Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction.

    PubMed

    Ross, Jason S; Rivera, Pasqual; Schaibley, John; Lee-Wong, Eric; Yu, Hongyi; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jiaqiang; Mandrus, David; Cobden, David; Yao, Wang; Xu, Xiaodong

    2017-02-08

    Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p-n junctions in a MoSe2-WSe2 heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p-n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. These results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.

  10. Modelling and studies of the spectral response of some optoelectronic components

    NASA Astrophysics Data System (ADS)

    Albino, André; Bortoli, Daniele; Tlemçani, Mouhaydine; Joyce, António

    2016-10-01

    Solar radiation takes in today's world, an increasing importance. Different devices are used to carry out spectral and integrated measurements of solar radiation. Thus the sensors can be divided into the fallow types: Calorimetric, Thermomechanical, Thermoelectric and Photoelectric. The first three categories are based on components converting the radiation to temperature (or heat) and then into electrical quantity. On the other hand, the photoelectric sensors are based on semiconductor or optoelectronic elements that when irradiated change their impedance or generate a measurable electric signal. The response function of the sensor element depends not only on the intensity of the radiation but also on its wavelengths. The radiation sensors most widely used fit in the first categories, but thanks to the reduction in manufacturing costs and to the increased integration of electronic systems, the use of the photoelectric-type sensors became more interesting. In this work we present a study of the behavior of different optoelectronic sensor elements. It is intended to verify the static response of the elements to the incident radiation. We study the optoelectronic elements using mathematical models that best fit their response as a function of wavelength. As an input to the model, the solar radiation values are generated with a radiative transfer model. We present a modeling of the spectral response sensors of other types in order to compare the behavior of optoelectronic elements with other sensors currently in use.

  11. 78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-20

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International...

  12. Untangling the isotopic effects of deuteration on the optoelectronic properties of conducting polymers

    SciTech Connect

    Shao, Ming; Keum, Jong Kahk; Chen, Jihua; Chen, Wei; Browning, Jim; Jakowski, Jacek; Sumpter, Bobby G; Ivanov, Ilia N; Ma, Yingzhong; Rouleau, Christopher M; Smith, Sean C; Geohegan, David B; Hong, Kunlun; Xiao, Kai

    2014-01-01

    The attractive optoelectronic properties of conducting polymers depend sensitively upon intra- and inter-polymer chain interactions, and therefore new methods to manipulate these interactions are continually being pursued. Here, we report a study of the isotopic effects of deuterium substitution on the structure, morphology, and optoelectronic properties of regioregular poly(3-hexylthiophene)s (P3HT) with an approach that combines the synthesis of deuterated materials, optoelectronic properties measurements, theoretical simulation, and neutron scattering. Selective substitutions of deuterium on the backbone or side-chains of P3HT result in distinct optoelectronic responses in P3HT/[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) photovoltaics. Specifically, the weak non-covalent intermolecular interactions induced by the main-chain deuteration are shown to change the film crystallinity and morphology of P3HT/PCBM blends, and consequently reduce the short circuit current. However, decreased electronic coupling, the formation of a charge transfer state, and increased electron-phonon coupling resulting from side chain deuteration are shown to induce a remarkable reduction in open circuit voltage.

  13. Interlayer Exciton Optoelectronics in a 2D Heterostructure p–n Junction

    NASA Astrophysics Data System (ADS)

    Ross, Jason S.; Rivera, Pasqual; Schaibley, John; Lee-Wong, Eric; Yu, Hongyi; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jiaqiang; Mandrus, David; Cobden, David; Yao, Wang; Xu, Xiaodong

    2017-02-01

    Semiconductor heterostructures are backbones for solid state based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures has enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb-bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p-n junctions in a MoSe2-WSe2 heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p-n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller compared to the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is two orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to opposite layers. These results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.

  14. Concept of Quantum Geometry in Optoelectronic Processes in Solids: Application to Solar Cells.

    PubMed

    Nagaosa, Naoto; Morimoto, Takahiro

    2017-03-20

    The concept of topology is becoming more and more relevant to the properties and functions of electronic materials including various transport phenomena and optical responses. A pedagogical introduction is given here to the basic ideas and their applications to optoelectronic processes in solids.

  15. Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector

    NASA Astrophysics Data System (ADS)

    Ko, Pil Ju; Abderrahmane, Abdelkader; Takamura, Tsukasa; Kim, Nam-Hoon; Sandhu, Adarsh

    2016-08-01

    Two-dimensional (2D) layered materials exhibit unique optoelectronic properties at atomic thicknesses. In this paper, we fabricated metal-semiconductor-metal based photodetectors using layered gallium selenide (GaSe) with different thicknesses. The electrical and optoelectronic properties of the photodetectors were studied, and these devices showed good electrical characteristics down to GaSe flake thicknesses of 30 nm. A photograting effect was observed in the absence of a gate voltage, thereby implying a relatively high photoresponsivity. Higher values of the photoresponsivity occurred for thicker layers of GaSe with a maximum value 0.57 AW-1 and external quantum efficiency of of 132.8%, and decreased with decreasing GaSe flake thickness. The detectivity was 4.05 × 1010 cm Hz1/2 W-1 at 532 nm laser wavelength, underscoring that GaSe is a promising p-type 2D material for photodetection applications in the visible spectrum.

  16. Biological monitoring of exposures to aluminium, gallium, indium, arsenic, and antimony in optoelectronic industry workers.

    PubMed

    Liao, Y-H; Yu, H-S; Ho, C-K; Wu, M-T; Yang, C-Y; Chen, J-R; Chang, C-C

    2004-09-01

    The main objective of this study was to investigate aluminum, gallium, indium, arsenic, and antimony exposures on blood and urine levels in the optoelectronic workers. One hundred seventy subjects were enrolled in this cohort study. Whole blood and urine levels were determined by inductively coupled plasma-mass spectrometry. Blood indium and urine gallium and arsenic levels in the 103 workers were significantly higher than that in 67 controls during the follow-up period. In regression models, the significant risk factors of exposure were job title, preventive equipment, Quetelet's index, sex, and education level. The findings of this study suggest that gallium, indium, and arsenic exposure levels may affect their respective levels in blood and urine. The use of clean, preventive equipment is recommended when prioritizing the administration of safety and hygiene in optoelectronics industries.

  17. Preserving π-conjugation in covalently functionalized carbon nanotubes for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Setaro, Antonio; Adeli, Mohsen; Glaeske, Mareen; Przyrembel, Daniel; Bisswanger, Timo; Gordeev, Georgy; Maschietto, Federica; Faghani, Abbas; Paulus, Beate; Weinelt, Martin; Arenal, Raul; Haag, Rainer; Reich, Stephanie

    2017-01-01

    Covalent functionalization tailors carbon nanotubes for a wide range of applications in varying environments. Its strength and stability of attachment come at the price of degrading the carbon nanotubes sp2 network and destroying the tubes electronic and optoelectronic features. Here we present a non-destructive, covalent, gram-scale functionalization of single-walled carbon nanotubes by a new [2+1] cycloaddition. The reaction rebuilds the extended π-network, thereby retaining the outstanding quantum optoelectronic properties of carbon nanotubes, including bright light emission at high degree of functionalization (1 group per 25 carbon atoms). The conjugation method described here opens the way for advanced tailoring nanotubes as demonstrated for light-triggered reversible doping through photochromic molecular switches and nanoplasmonic gold-nanotube hybrids with enhanced infrared light emission.

  18. Self-oscillating optical frequency comb generator based on an optoelectronic oscillator employing cascaded modulators.

    PubMed

    Dai, Jian; Xu, Xingyuan; Wu, Zhongle; Dai, Yitang; Yin, Feifei; Zhou, Yue; Li, Jianqiang; Xu, Kun

    2015-11-16

    An ultraflat self-oscillating optical frequency comb generator based on an optoelectronic oscillator employing cascaded modulators was proposed and experimentally demonstrated. By incorporating the optoelectronic oscillation loop with cascaded modulators into the optical frequency comb generator, 11 ultraflat comb lines would be generated, and the frequency spacing is equal to the oscillation frequency of the OEO. 10 and 12GHz optical frequency combs are demonstrated with the spectral power variation below 0.82dB and 0.93dB respectively. The corresponding spectral pure microwave source are also generated and evaluated. The corresponding single-sideband phase noise are as low as -122dBc/Hz and -115 dBc/Hz at 10 kHz offset frequency.

  19. Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

    PubMed Central

    Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

    2016-01-01

    The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics. PMID:27507171

  20. Research progress of low-dimensional perovskites: synthesis, properties and optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Min, Xinzhe; Pengchen, Zhu; Gu, Shuai; Jia, Zhu

    2017-01-01

    The lead halide-based perovskites, for instance, CH3NH3PbX3 and CsPbX3 (X = Cl, Br, I), have received a lot of attention. Compared with bulk materials, low-dimensional perovskites have demonstrated a range of unique optical, electrical and mechanical properties, which enable wide applications in solar cells, lasers and other optoelectronic devices. In this paper, we provide a summary of the research progress of the low-dimensional perovskites in recent years, from synthesis methods, basic properties to their optoelectronic applications. Project jointly supported by the State Key Program for Basic Research of China (No. 2015CB659300), the National Natural Science Foundation of China (Nos. 11321063, 11574143), the Natural Science Foundation of Jiangsu Province (Nos. BK20150056, BK20151079), the Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), and the Fundamental Research Funds for the Central Universities.

  1. Optoelectronically automated system for carbon nanotubes synthesis via arc-discharge in solution

    NASA Astrophysics Data System (ADS)

    Bera, Debasis; Brinley, Erik; Kuiry, Suresh C.; McCutchen, Matthew; Seal, Sudipta; Heinrich, Helge; Kabes, Bradley

    2005-03-01

    The method of arc discharge in the solution is unique and inexpensive route for synthesis of the carbon nanotubes (CNTs), carbon onions, and other carbon nanostructures. Such a method can be used for in situ synthesis of CNTs decorated with nanoparticles. Herein, we report a simple and inexpensive optoelectronically automated system for arc discharge in solution synthesis of CNTs. The optoelectronic system maintains a constant gap between the two electrodes allowing a continuous synthesis of the carbon nanostructures. The system operates in a feedback loop consisting of an electrode-gap detector and an analog electronic unit, as controller. This computerized feeding system of the anode was used for in situ nanoparticles incorporated CNTs. For example, we have successfully decorated CNTs with ceria, silica, and palladium nanoparticles. Characterizations of nanostructures are performed using high-resolution transmission electron microscopy, scanning transmission electron microscopy, energy dispersive spectroscopy, and scanning electron microscopy.

  2. Optoelectronic studies on heterocyclic bases of deoxyribonucleic acid for DNA photonics.

    PubMed

    El-Diasty, Fouad; Abdel-Wahab, Fathy

    2015-10-01

    The optoelectronics study of large molecules, particularly π-stacking molecules, such as DNA is really an extremely difficult task. We perform first electronic structure calculations on the heterocyclic bases of 2'-deoxyribonucleic acid based on Lorentz-Fresnel dispersion theory. In the UV-VIS range of spectrum, many of the optoelectronic parameters for DNA four bases namely adenine, guanine, cytosine and thymine are calculated and discussed. The results demonstrate that adenine has the highest hyperpolarizability, whereas thymine has the lowest hyperpolarizability. Cytosine has the lower average oscillator energy and the higher lattice energy. Thymine infers the most stable nucleic base with the lower phonon energy. Thymine also has the highest average oscillator energy and the lower lattice energy. Moreover, the four nucleic acid bases have large band gap energies less than 5 eV with a semiconducting behavior. Guanine shows the smallest band gap and the highest Fermi level energy, whereas adenine elucidates the highest band gap energy.

  3. A quantum-well inversion channel heterostructure as a multifunctional component for optoelectronic integrated circuits

    NASA Astrophysics Data System (ADS)

    Sargood, Stephen K.; Taylor, Geoffrey W.; Claisse, Paul R.; Vang, Timothy; Cooke, Paul; Docter, Daniel P.; Kiely, Philip A.; Burrus, Charles A., Jr.

    1993-01-01

    Attention is given to an approach to optoelectronic integration employing a universal heterostructure with a single GaAs quantum-well active region. The fabrication technology was developed for GHz bandwidth applications by using ion implantation techniques for interdevice electrical isolation and surface planarization, and reactive ion-etching to realize a self-aligned transistor-based heterostructure. The design, fabrication, and characterization of various heterostructures are discussed in the light of optoelectronic integration and the implementation of ion implantation disordering to realize low-loss self-aligned waveguides for on-chip signal routing. The ultimate performance of the devices using a GaAs quantum well is considered, as well as the development of this technology for improved performance using strained InGaAs wells.

  4. Effect of annealing over optoelectronic properties of graphene based transparent electrodes

    NASA Astrophysics Data System (ADS)

    Yadav, Shriniwas; Kaur, Inderpreet

    2016-04-01

    Graphene, an atom-thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σdc/σopt) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

  5. Preserving π-conjugation in covalently functionalized carbon nanotubes for optoelectronic applications

    PubMed Central

    Setaro, Antonio; Adeli, Mohsen; Glaeske, Mareen; Przyrembel, Daniel; Bisswanger, Timo; Gordeev, Georgy; Maschietto, Federica; Faghani, Abbas; Paulus, Beate; Weinelt, Martin; Arenal, Raul; Haag, Rainer; Reich, Stephanie

    2017-01-01

    Covalent functionalization tailors carbon nanotubes for a wide range of applications in varying environments. Its strength and stability of attachment come at the price of degrading the carbon nanotubes sp2 network and destroying the tubes electronic and optoelectronic features. Here we present a non-destructive, covalent, gram-scale functionalization of single-walled carbon nanotubes by a new [2+1] cycloaddition. The reaction rebuilds the extended π-network, thereby retaining the outstanding quantum optoelectronic properties of carbon nanotubes, including bright light emission at high degree of functionalization (1 group per 25 carbon atoms). The conjugation method described here opens the way for advanced tailoring nanotubes as demonstrated for light-triggered reversible doping through photochromic molecular switches and nanoplasmonic gold-nanotube hybrids with enhanced infrared light emission. PMID:28134240

  6. Preserving π-conjugation in covalently functionalized carbon nanotubes for optoelectronic applications.

    PubMed

    Setaro, Antonio; Adeli, Mohsen; Glaeske, Mareen; Przyrembel, Daniel; Bisswanger, Timo; Gordeev, Georgy; Maschietto, Federica; Faghani, Abbas; Paulus, Beate; Weinelt, Martin; Arenal, Raul; Haag, Rainer; Reich, Stephanie

    2017-01-30

    Covalent functionalization tailors carbon nanotubes for a wide range of applications in varying environments. Its strength and stability of attachment come at the price of degrading the carbon nanotubes sp(2) network and destroying the tubes electronic and optoelectronic features. Here we present a non-destructive, covalent, gram-scale functionalization of single-walled carbon nanotubes by a new [2+1] cycloaddition. The reaction rebuilds the extended π-network, thereby retaining the outstanding quantum optoelectronic properties of carbon nanotubes, including bright light emission at high degree of functionalization (1 group per 25 carbon atoms). The conjugation method described here opens the way for advanced tailoring nanotubes as demonstrated for light-triggered reversible doping through photochromic molecular switches and nanoplasmonic gold-nanotube hybrids with enhanced infrared light emission.

  7. Non-blinking semiconductor colloidal quantum dots for biology, optoelectronics and quantum optics.

    PubMed

    Spinicelli, Piernicola; Mahler, Benoit; Buil, Stéphanie; Quélin, Xavier; Dubertret, Benoit; Hermier, Jean-Pierre

    2009-04-14

    Twinkle, twinkle: The blinking of semiconductor colloidal nanocrystals is the main inconvenience of these bright nanoemitters. There are various approaches for obtaining non-blinking nanocrystals, one of which is to grow a thick coat of CdS on the CdSe core (see picture). Applications of this method in the fields of optoelectronic devices, biologic labelling and quantum information processing are discussed.The blinking of semiconductor colloidal nanocrystals is the main inconvenience of these bright nanoemitters. For some years, research on this phenomenon has demonstrated the possibility to progress beyond this problem by suppressing this fluorescence intermittency in various ways. After a brief overview on the microscopic mechanism of blinking, we review the various approaches used to obtain non-blinking nanocrystals and discuss the commitment of this crucial improvement to applications in the fields of optoelectronic devices, biologic labelling and quantum information processing.

  8. A tunable hemispherical platform for non-stretching curved flexible electronics and optoelectronics

    SciTech Connect

    Zhuang, Jinda; Ju, Y. Sungtaek

    2014-07-28

    One major challenge in incorporating flexible electronics or optoelectronics on curved surfaces is the requirement of significant stretchability. We report a tunable platform for incorporating flexible and yet non-stretching device layers on a hemisphere. In this configuration, an array of planar petals contractively maps onto the surface of an inflatable hemisphere through elastocapillary interactions mediated by an interface liquid. A mechanical model is developed to elucidate the dependence of the conformality of the petal structures on their elastic modulus and thickness and the liquid surface tension. The modeling results are validated against experimental results obtained using petal structures of different thicknesses, restoring elastic spring elements of different spring constants, and liquids with different surface tension coefficients. Our platform will enable facile integration of non-stretching electronic and optoelectronic components prepared using established planar fabrication techniques on tunable hemispherical surfaces.

  9. The optoelectronic properties of a solar energy material: Ag2HgSnS4

    NASA Astrophysics Data System (ADS)

    Hadjri Mebarki, S.; Amrani, B.; Driss Khodja, K.; Khelil, A.

    2017-03-01

    We used an ab initio full potential-linearized augmented plane wave technique within the density functional theory to study the structural and optoelectronic properties of Ag2HgSnS4 in a wurtzite-stannite phase. The exchange correlation effects are included through the generalized gradient approximation and modified Becke-Johnson exchange potential. Various physical quantities, such as lattice parameter, bulk modulus, band structure and density of states, are given. Also, we have presented the results of the effective mass for the electrons in the CB and the holes in the BV. We show that the modified Becke-Johnson exchange potential can predict the energy band gap in better agreement with the experiment. In addition the dielectric function and energy-loss function are presented for the energy range of 0-26 eV. The electronic and optical properties indicate that this compound can be successfully used in optoelectronic devices

  10. Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.

    PubMed

    Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei

    2013-10-13

    Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

  11. Detecting Low-Power RF Signals Using a Multimode Optoelectronic Oscillator and Integrated Optical Filter

    DTIC Science & Technology

    2010-02-01

    from IEEE Xplore . Restrictions apply. 154 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 22, NO. 3, FEBRUARY 1, 2010 Fig. 4. Measured silicon FPF response...air Bragg mirrors,” Opt. Lett., vol. 32, no. 5, pp. 533–535, 2007. Authorized licensed use limited to: NRL. Downloaded on January 13, 2010 at 07:41 from IEEE Xplore . Restrictions apply. ...152 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 22, NO. 3, FEBRUARY 1, 2010 Detecting Low-Power RF Signals Using a Multimode Optoelectronic Oscillator

  12. Non-Shilnikov cascades of spikes and hubs in a semiconductor laser with optoelectronic feedback.

    PubMed

    Freire, Joana G; Gallas, Jason A C

    2010-09-01

    Incomplete homoclinic scenarios were recently measured in a semiconductor laser with optoelectronic feedback. We show here that such a laser contains cascades of spirals of periodic oscillations and hubs which look identical to the familiar ones observed in complete homoclinic scenarios. This means that hubs are far more general than presumed so far, being not limited by Shilnikov's theorem. Laser hubs open the possibility of measuring complex distributions of non-Shilnikov laser oscillations, and we briefly discuss how to do it.

  13. Stereo-microvision. Development of an opto-electronic operating microscope.

    PubMed

    Reinhardt, H F; Horstmann, G A; Spink, R; Amrein, E I; Forrer, P

    1993-06-01

    A novel opto-electronic operating microscope has been designed and clinically tested. It consists of a small camera microscope, a central electronic unit, and a stereoscopic video monitor. Advanced miniaturization permitted ergonomics superior to those of conventional optomechanical microscopes. Electronic imaging facilitates coupling to an ultrasound navigation system which enables the neurosurgeon to verify the location of the focus in real time, correlated with CT and MRI pictures. A fully computerized, digital operating microscope will now be developed based on this prototype.

  14. Self-assembled III-V quantum dots: potential for silicon optoelectronics

    NASA Technical Reports Server (NTRS)

    Leon, R.

    2001-01-01

    The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.

  15. Character recognition using a dynamic optoelectronic neural network with unipolar binary weights.

    PubMed

    Oita, M; Takahashi, M; Tai, S; Kyuma, K

    1990-11-01

    A novel type of quantized learning rule with unipolar binary weights that is useful for the optical implementation of neural networks is reported. An input-dependent thresholding operation is also proposed to remove the unwanted effects that are due to the insufficient contrast ratio of spatial light modulators as synaptic connection devices. Moreover, we experimentally demonstrate the recognition of 26 characters of the alphabet by using the single set of an optoelectronic three-layered network.

  16. Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality.

    PubMed

    Bilgin, Ismail; Liu, Fangze; Vargas, Anthony; Winchester, Andrew; Man, Michael K L; Upmanyu, Moneesh; Dani, Keshav M; Gupta, Gautam; Talapatra, Saikat; Mohite, Aditya D; Kar, Swastik

    2015-09-22

    The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising low-cost route for CMOS compatible, large-scale growth of materials, it often falls short of the high-quality demands in nanoelectronics and optoelectronics. We present large-scale CVD synthesis of single- and few-layered MoS2 using direct vapor-phase sulfurization of MoO2, which enables us to obtain extremely high-quality single-crystal monolayer MoS2 samples with field-effect mobility exceeding 30 cm(2)/(V s) in monolayers. These samples can be readily synthesized on a variety of substrates, and demonstrate a high-degree of optoelectronic uniformity in Raman and photoluminescence mapping over entire crystals with areas exceeding hundreds of square micrometers. Because of their high crystalline quality, Raman spectroscopy on these samples reveal a range of multiphonon processes through peaks with equal or better clarity compared to past reports on mechanically exfoliated samples. This enables us to investigate the layer thickness and substrate dependence of the extremely weak phonon processes at 285 and 487 cm(-1) in 2D-MoS2. The ultrahigh, optoelectronic-grade crystalline quality of these samples could be further established through photocurrent spectroscopy, which clearly reveal excitonic states at room temperature, a feat that has been previously demonstrated only on samples which were fabricated by micro-mechanical exfoliation and then artificially suspended across trenches. Our method reflects a big step in the development of atomically thin, 2D-MoS2 for scalable, high-quality optoelectronics.

  17. Visual pattern recognition network: its training algorithm and its optoelectronic architecture

    NASA Astrophysics Data System (ADS)

    Wang, Ning; Liu, Liren

    1996-07-01

    A visual pattern recognition network and its training algorithm are proposed. The network constructed of a one-layer morphology network and a two-layer modified Hamming net. This visual network can implement invariant pattern recognition with respect to image translation and size projection. After supervised learning takes place, the visual network extracts image features and classifies patterns much the same as living beings do. Moreover we set up its optoelectronic architecture for real-time pattern recognition.

  18. Doping dependent crystal structures and optoelectronic properties of n-type CdSe:Ga nanowries.

    PubMed

    Hu, Zhizhong; Zhang, Xiujuan; Xie, Chao; Wu, Chunyan; Zhang, Xiaozhen; Bian, Liang; Wu, Yiming; Wang, Li; Zhang, Yuping; Jie, Jiansheng

    2011-11-01

    Although CdSe nanostructures possess excellent electrical and optical properties, efforts to make nano-optoelectronic devices from CdSe nanostructures have been hampered by the lack of efficient methods to rationally control their structural and electrical characteristics. Here, we report CdSe nanowires (NWs) with doping dependent crystal structures and optoelectronic properties by using gallium (Ga) as the efficient n-type dopant via a simple thermal co-evaporation method. The phase change of CdSe NWs from wurtzite to zinc blende with increased doping level is observed. Systematical measurements on the transport properties of the CdSe:Ga NWs reveal that the NW conductivity could be tuned in a wide range of near nine orders of magnitude by adjusting the Ga doping level and a high electron concentration up to 4.5 × 10(19) cm(-3) is obtained. Moreover, high-performance top-gate field-effect transistors are constructed based on the individual CdSe:Ga NWs by using high-κ HfO(2) as the gate dielectric. The great potential of the CdSe:Ga NWs as high-sensitive photodetectors and nanoscale light emitters is also exploited, revealing the promising applications of the CdSe:Ga NWs in new-generation nano-optoelectronics.

  19. Alkyl-π engineering in state control toward versatile optoelectronic soft materials

    PubMed Central

    Lu, Fengniu; Nakanishi, Takashi

    2015-01-01

    Organic π-conjugated molecules with extremely rich and tailorable electronic and optical properties are frequently utilized for the fabrication of optoelectronic devices. To achieve high solubility for facile solution processing and desirable softness for flexible device fabrication, the rigid π units were in most cases attached by alkyl chains through chemical modification. Considerable numbers of alkylated-π molecular systems with versatile applications have been reported. However, a profound understanding of the molecular state control through proper alkyl chain substitution is still highly demanded because effective applications of these molecules are closely related to their physical states. To explore the underlying rule, we review a large number of alkylated-π molecules with emphasis on the interplay of van der Waals interactions (vdW) of the alkyl chains and π–π interactions of the π moieties. Based on our comprehensive investigations of the two interactions’ impacts on the physical states of the molecules, a clear guidance for state control by alkyl-π engineering is proposed. Specifically, either with proper alkyl chain substitution or favorable additives, the vdW and π–π interactions can be adjusted, resulting in modulation of the physical states and optoelectronic properties of the molecules. We believe the strategy summarized here will significantly benefit the alkyl-π chemistry toward wide-spread applications in optoelectronic devices. PMID:27877748

  20. Optoelectronic Devices, Sensors, Communication and Multimedia, Photonics Applications and Web Engineering, Wilga, May 2012

    NASA Astrophysics Data System (ADS)

    Romaniuk, Ryszard S.

    2012-05-01

    This paper is the fourth part (out of five) of the research survey of WILGA Symposium work, May 2012 Edition, concerned with Optoelectronic Devices, Sensors, Communication and Multimedia (Video and Audio) technologies. It presents a digest of chosen technical work results shown by young researchers from different technical universities from this country during the Jubilee XXXth SPIE-IEEE Wilga 2012, May Edition, symposium on Photonics and Web Engineering. Topical tracks of the symposium embraced, among others, nanomaterials and nanotechnologies for photonics, sensory and nonlinear optical fibers, object oriented design of hardware, photonic metrology, optoelectronics and photonics applications, photonics-electronics co-design, optoelectronic and electronic systems for astronomy and high energy physics experiments, JET tokamak and pi-of-the sky experiments development. The symposium is an annual summary in the development of numerable Ph.D. theses carried out in this country in the area of advanced electronic and photonic systems. It is also a great occasion for SPIE, IEEE, OSA and PSP students to meet together in a large group spanning the whole country with guests from this part of Europe. A digest of Wilga references is presented [1-270].

  1. Molecular doping of single-walled carbon nanotube transistors: optoelectronic study

    NASA Astrophysics Data System (ADS)

    Zhang, Jiangbin; Emelianov, Aleksei V.; Bakulin, Artem A.; Bobrinetskiy, Ivan I.

    2016-09-01

    Single-walled carbon nanotubes (SWCNT) are a promising material for future optoelectronic applications, including flexible electrodes and field-effect transistors. Molecular doping of carbon nanotube surface can be an effective way to control the electronic structure and charge dynamics of these material systems. Herein, two organic semiconductors with different energy level alignment in respect to SWCNT are used to dope the channel of the SWCNT-based transistor. The effects of doping on the device performance are studied with a set of optoelectronic measurements. For the studied system, we observed an opposite change in photo-resistance, depending on the type (electron donor vs electron acceptor) of the dopants. We attribute this effect to interplay between two effects: (i) the change in the carrier concentration and (ii) the formation of trapping states at the SWCNT surface. We also observed a modest 4 pA photocurrent generation in the doped systems, which indicates that the studied system could be used as a platform for multi-pulse optoelectronic experiments with photocurrent detection.

  2. Cell patterning via diffraction-induced optoelectronic dielectrophoresis force on an organic photoconductive chip.

    PubMed

    Yang, Shih-Mo; Tseng, Sheng-Yang; Chen, Hung-Po; Hsu, Long; Liu, Cheng-Hsien

    2013-10-07

    A laser diffraction-induced dielectrophoresis (DEP) phenomenon for the patterning and manipulation of individual HepG2 cells and polystyrene beads via positive/negative DEP forces is reported in this paper. The optoelectronic substrate was fabricated using an organic photoconductive material, TiOPc, via a spin-coating process on an indium tin oxide glass surface. A piece of square aperture array grid grating was utilized to transform the collimating He-Ne laser beam into the multi-spot diffraction pattern which forms the virtual electrodes as the TiOPc-coating surface was illuminated by the multi-spot diffraction light pattern. HepG2 cells were trapped at the spot centers and polystyrene beads were trapped within the dim region of the illuminated image. The simulation results of light-induced electric field and a Fresnel diffraction image illustrated the distribution of trapped microparticles. The HepG2 morphology change, adhesion, and growth during a 5-day culture period demonstrated the cell viability through our manipulation. The power density inducing DEP phenomena, the characteristics of the thin TiOPc coating layer, the operating ac voltage/frequency, the sandwiched medium, the temperature rise due to the ac electric fields and the illuminating patterns are discussed in this paper. This concept of utilizing laser diffraction images to generate virtual electrodes on our TiOPc-based optoelectronic DEP chip extends the applications of optoelectronic dielectrophoretic manipulation.

  3. Optoelectronically probing the density of nanowire surface trap states to the single state limit

    SciTech Connect

    Dan, Yaping

    2015-02-02

    Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 10{sup 9 }cm{sup −2}/eV at deep levels to 10{sup 12 }cm{sup −2}/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

  4. Accuracy and Feasibility of Optoelectronic Sensors for Weed Mapping in Wide Row Crops

    PubMed Central

    Andújar, Dionisio; Ribeiro, Ángela; Fernández-Quintanilla, César; Dorado, José

    2011-01-01

    The main objectives of this study were to assess the accuracy of a ground-based weed mapping system that included optoelectronic sensors for weed detection, and to determine the sampling resolution required for accurate weed maps in maize crops. The optoelectronic sensors were located in the inter-row area of maize to distinguish weeds against soil background. The system was evaluated in three maize fields in the early spring. System verification was performed with highly reliable data from digital images obtained in a regular 12 m × 12 m grid throughout the three fields. The comparison in all these sample points showed a good relationship (83% agreement on average) between the data of weed presence/absence obtained from the optoelectronic mapping system and the values derived from image processing software (“ground truth”). Regarding the optimization of sampling resolution, the comparison between the detailed maps (all crop rows with sensors separated 0.75 m) with maps obtained with various simulated distances between sensors (from 1.5 m to 6.0 m) indicated that a 4.5 m distance (equivalent to one in six crop rows) would be acceptable to construct accurate weed maps. This spatial resolution makes the system cheap and robust enough to generate maps of inter-row weeds. PMID:22163740

  5. Highly Conductive Transparent Organic Electrodes with Multilayer Structures for Rigid and Flexible Optoelectronics

    PubMed Central

    Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

    2015-01-01

    Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric–metal–dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq−1 at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices. PMID:26014889

  6. Solution growth of single crystal methylammonium lead halide perovskite nanostructures for optoelectronic and photovoltaic applications.

    PubMed

    Fu, Yongping; Meng, Fei; Rowley, Matthew B; Thompson, Blaise J; Shearer, Melinda J; Ma, Dewei; Hamers, Robert J; Wright, John C; Jin, Song

    2015-05-06

    Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic-inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid-liquid interfacial conversion reaction can create a highly crystalline, nanostructured MAPbI3 film with micrometer grain size and high surface coverage that enables photovoltaic devices with a power conversion efficiency of 10.6%. These results suggest that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.

  7. Structural and optoelectronic properties of Eu2+-doped nanoscale barium titanates of pseudo-cubic form

    NASA Astrophysics Data System (ADS)

    Borah, Manjit; Mohanta, Dambarudhar

    2012-12-01

    The effect of europium (Eu)-doping on the optoelectronic carrier transition properties of pseudo-cubic barium titanate (BT) nanostructured system is being reported. Referring to x-ray diffractograms, apart from the diffraction peaks related to perovskite BT structure, non-existence of any additional peaks due to byproducts has revealed that Eu has undergone substitutional doping into BT host lattice. We speculate that adequate growth of a cubic overlayer over the tetragonal core has led to suppressed tetragonality (c/a ratio) features. We notice substantial decrease in the carrier transition exponent (n value), from its normal value, when doping level was varied within 0%-14%. While the overall photoluminescence response is improved with Eu-doping, the BT system was expected to experience concentration quenching. The emission peak at ˜455 nm was attributed to Eu2+ mediated 4f65d1→4f7 carrier transitions. Investigating optoelectronic properties of non-ferroelectric perovskite nanostructured system has a direct relevance in nanoscale optics and optoelectronic components.

  8. Fast terahertz optoelectronic amplitude modulator based on plasmonic metamaterial antenna arrays and graphene

    NASA Astrophysics Data System (ADS)

    Jessop, David S.; Sol, Christian W. O.; Xiao, Long; Kindness, Stephen J.; Braeuninger-Weimer, Philipp; Lin, Hungyen; Griffiths, Jonathan P.; Ren, Yuan; Kamboj, Varun S.; Hofmann, Stephan; Zeitler, J. Axel; Beere, Harvey E.; Ritchie, David A.; Degl'Innocenti, Riccardo

    2016-02-01

    The growing interest in terahertz (THz) technologies in recent years has seen a wide range of demonstrated applications, spanning from security screening, non-destructive testing, gas sensing, to biomedical imaging and communication. Communication with THz radiation offers the advantage of much higher bandwidths than currently available, in an unallocated spectrum. For this to be realized, optoelectronic components capable of manipulating THz radiation at high speeds and high signal-to-noise ratios must be developed. In this work we demonstrate a room temperature frequency dependent optoelectronic amplitude modulator working at around 2 THz, which incorporates graphene as the tuning medium. The architecture of the modulator is an array of plasmonic dipole antennas surrounded by graphene. By electrostatically doping the graphene via a back gate electrode, the reflection characteristics of the modulator are modified. The modulator is electrically characterized to determine the graphene conductivity and optically characterization, by THz time-domain spectroscopy and a single-mode 2 THz quantum cascade laser, to determine the optical modulation depth and cut-off frequency. A maximum optical modulation depth of ~ 30% is estimated and is found to be most (least) sensitive when the electrical modulation is centered at the point of maximum (minimum) differential resistivity of the graphene. A 3 dB cut-off frequency > 5 MHz, limited only by the area of graphene on the device, is reported. The results agree well with theoretical calculations and numerical simulations, and demonstrate the first steps towards ultra-fast, graphene based THz optoelectronic devices.

  9. Accuracy and feasibility of optoelectronic sensors for weed mapping in wide row crops.

    PubMed

    Andújar, Dionisio; Ribeiro, Ángela; Fernández-Quintanilla, César; Dorado, José

    2011-01-01

    The main objectives of this study were to assess the accuracy of a ground-based weed mapping system that included optoelectronic sensors for weed detection, and to determine the sampling resolution required for accurate weed maps in maize crops. The optoelectronic sensors were located in the inter-row area of maize to distinguish weeds against soil background. The system was evaluated in three maize fields in the early spring. System verification was performed with highly reliable data from digital images obtained in a regular 12 m × 12 m grid throughout the three fields. The comparison in all these sample points showed a good relationship (83% agreement on average) between the data of weed presence/absence obtained from the optoelectronic mapping system and the values derived from image processing software ("ground truth"). Regarding the optimization of sampling resolution, the comparison between the detailed maps (all crop rows with sensors separated 0.75 m) with maps obtained with various simulated distances between sensors (from 1.5 m to 6.0 m) indicated that a 4.5 m distance (equivalent to one in six crop rows) would be acceptable to construct accurate weed maps. This spatial resolution makes the system cheap and robust enough to generate maps of inter-row weeds.

  10. Monolithic optoelectronic chip for label-free multi-analyte sensing applications

    NASA Astrophysics Data System (ADS)

    Raptis, Ioannis; Makarona, Eleni; Petrou, Panagiota; Kakabakos, Sotiris E.; Misiakos, Konstantinos

    2014-03-01

    The existing technological approaches employed in the realization of optical sensors still face two major challenges: the inherent inability of most sensors to integrate the optical source in the transducer chip, and the need to specifically design the optical transducer per application. We have introduced a unique Optoelectronic chip that consists of a series of light emitting diodes (LEDs) coupled to silicon nitride waveguides allowing for multi-analyte detection. Each optocoupler is structured as Broad-Band Mach-Zehnder Interferometer and has its own excitation source and can either have its own detector or the entire array can share a common detector. The light emitting devices (LEDs) are silicon avalanche diodes which when biased beyond their breakdown voltage emit in the VIS-NIR part of the spectrum. The optoelectronic chip is fabricated by standard silicon technology allowing for potential mass production in silicon foundries. The integrated nature of the optoelectronic chip and the ability to functionalize each transducer independently allows for the development of miniaturized optical transducers tailored towards multi-analyte tests. The platform has been successfully applied in bioassays and binding assays monitoring in a real-time and label-free format and is currently being applied to ultra-sensitive food safety applications.

  11. Two-Dimensional Materials for Halide Perovskite-Based Optoelectronic Devices.

    PubMed

    Chen, Shan; Shi, Gaoquan

    2017-03-03

    Halide perovskites have high light absorption coefficients, long charge carrier diffusion lengths, intense photoluminescence, and slow rates of non-radiative charge recombination. Thus, they are attractive photoactive materials for developing high-performance optoelectronic devices. These devices are also cheap and easy to be fabricated. To realize the optimal performances of halide perovskite-based optoelectronic devices (HPODs), perovskite photoactive layers should work effectively with other functional materials such as electrodes, interfacial layers and encapsulating films. Conventional two-dimensional (2D) materials are promising candidates for this purpose because of their unique structures and/or interesting optoelectronic properties. Here, we comprehensively summarize the recent advancements in the applications of conventional 2D materials for halide perovskite-based photodetectors, solar cells and light-emitting diodes. The examples of these 2D materials are graphene and its derivatives, mono- and few-layer transition metal dichalcogenides (TMDs), graphdiyne and metal nanosheets, etc. The research related to 2D nanostructured perovskites and 2D Ruddlesden-Popper perovskites as efficient and stable photoactive layers is also outlined. The syntheses, functions and working mechanisms of relevant 2D materials are introduced, and the challenges to achieving practical applications of HPODs using 2D materials are also discussed.

  12. Organic-inorganic hybrid lead halide perovskites for optoelectronic and electronic applications.

    PubMed

    Zhao, Yixin; Zhu, Kai

    2016-02-07

    Organic and inorganic hybrid perovskites (e.g., CH(3)NH(3)PbI(3)), with advantages of facile processing, tunable bandgaps, and superior charge-transfer properties, have emerged as a new class of revolutionary optoelectronic semiconductors promising for various applications. Perovskite solar cells constructed with a variety of configurations have demonstrated unprecedented progress in efficiency, reaching about 20% from multiple groups after only several years of active research. A key to this success is the development of various solution-synthesis and film-deposition techniques for controlling the morphology and composition of hybrid perovskites. The rapid progress in material synthesis and device fabrication has also promoted the development of other optoelectronic applications including light-emitting diodes, photodetectors, and transistors. Both experimental and theoretical investigations on organic-inorganic hybrid perovskites have enabled some critical fundamental understandings of this material system. Recent studies have also demonstrated progress in addressing the potential stability issue, which has been identified as a main challenge for future research on halide perovskites. Here, we review recent progress on hybrid perovskites including basic chemical and crystal structures, chemical synthesis of bulk/nanocrystals and thin films with their chemical and physical properties, device configurations, operation principles for various optoelectronic applications (with a focus on solar cells), and photophysics of charge-carrier dynamics. We also discuss the importance of further understanding of the fundamental properties of hybrid perovskites, especially those related to chemical and structural stabilities.

  13. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices.

    PubMed

    F Cauduro, André L; Dos Reis, Roberto; Chen, Gong; Schmid, Andreas K; Méthivier, Christophe; Rubahn, Horst-Günter; Bossard-Giannesini, Léo; Cruguel, Hervé; Witkowski, Nadine; Madsen, Morten

    2017-03-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We report on a work function increase of almost 2 eV after inducing in situ crystallization of the films at 500 °C, resulting in the formation of a single crystalline α-MoO3 overlaid by substoichiometric and highly disordered nanoaggregates. The surface nanoaggregates possess various electronic properties, such as a work function ranging from 5.5 eV up to 6.2 eV, as determined from low-energy electron microscopy studies. The crystalline underlayer possesses a work function greater than 6.3 eV, up to 6.9 eV, characteristic of a very clean and nearly defect-free MoO3. By combining electronic spectroscopies together with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers.

  14. Tuning the optoelectronic properties of amorphous MoOx films by reactive sputtering

    NASA Astrophysics Data System (ADS)

    Fernandes Cauduro, André L.; Fabrim, Zacarias E.; Ahmadpour, Mehrad; Fichtner, Paulo F. P.; Hassing, Søren; Rubahn, Horst-Günter; Madsen, Morten

    2015-05-01

    In this letter, we report on the effect of oxygen partial pressure and sputtering power on amorphous DC-sputtered MoOx films. We observe abrupt changes in the optoelectronic properties of the reported films by increasing the oxygen partial pressure from 1.00 × 10-3 mbar to 1.37 × 10-3 mbar during the sputtering process. A strong impact on the electrical conductivity, varying from 1.6 × 10-5 S/cm to 3.22 S/cm, and on the absorption coefficient in the range of 0.6-3.0 eV is observed for the nearly stoichiometric MoO3.00 and for the sub-stoichiometric MoO2.57 films, respectively, without modifying significantly the microstructure of the studied films. The presence of states within the band gap due to the lack of oxygen is the most probable mechanism for generating a change in electrical conductivity as well as optical absorption in DC-sputtered MoOx. The large tuning range of the optoelectronic properties in these films holds strong promise for their implementation in optoelectronic devices.

  15. Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets

    NASA Astrophysics Data System (ADS)

    Chen, Xinliang; Li, Honglai; Qi, Zhaoyang; Yang, Tiefeng; Yang, Yankun; Hu, Xuelu; Zhang, Xuehong; Zhu, Xiaoli; Zhuang, Xiujuan; Hu, Wei; Pan, Anlian

    2016-12-01

    Quasi-one-dimensional (1D) nanostructures have been extensively explored for electronic and optoelectronic devices on account of their unique morphologies and versatile physical properties. Here, we report the successful synthesis of GaInAsSb alloy nanosheets by a simple chemical vapor deposition method. The grown GaInAsSb alloy nanosheets are pure zinc-blende single crystals, which show nanosize-induced extraordinary optoelectronic properties as compared with bulk materials. μ-Raman spectra exhibit a multi-mode phonon vibration behavior with clear frequency shifts under varied laser power. Photoluminescence measurements reveal a strong light emission in the near-infrared region (1985 nm), and the obtained Varshni thermal coefficients α and β are smaller than those of the bulk counterparts due to the size confinement effect. In addition, photodetectors (PDs) based on these single-alloy nanosheets were constructed for the first time. The PDs show a strong response in the near-infrared region with the external quantum efficiency of 8.05 × 104%, and the responsivity of 0.675 × 103 A W-1. These novel nanostructures would make contributions to the study of fundamental physical phenomena in quasi-1D nanomaterial systems and can be potential building blocks for optoelectronic and quantum devices.

  16. Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

    PubMed Central

    Wang, Gongming; Li, Dehui; Cheng, Hung-Chieh; Li, Yongjia; Chen, Chih-Yen; Yin, Anxiang; Zhao, Zipeng; Lin, Zhaoyang; Wu, Hao; He, Qiyuan; Ding, Mengning; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

    2015-01-01

    Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems. PMID:26601297

  17. Thieno[3,4-b]thiophene-Based Novel Small-Molecule Optoelectronic Materials.

    PubMed

    Zhang, Cheng; Zhu, Xiaozhang

    2017-04-04

    Because of the tailorable photoelectric properties derived from judicious molecular design and large-area and low-temperature processability especially on flexible substrates, design and synthesis of new organic π-functional materials is always a central topic in the field of organic optoelectronics, which siginificantly contributed to the development of high-performance optoelectronic devices such as organic photovoltaics (OPVs), organic field-effect transistors (OFETs), and organic light-emitting diodes (OLEDs). Compared with polymers, small molecules with well-defined molecular structures benefit the establishment of structure-property relationships, which may provide valuable guidelines for the design of new optoelectronic materials to further promote the device performance. New building blocks are essential for the construction of optoelectronic materials. As is well recognized, thiophene-based functional materials have played an indispensable role in the development of organic optoelectronics. Compared with six-membered benzene, five-membered thiophene shows weaker aromaticity and lower steric hindrance and may provide extra sulfur-sulfur interactions in solid state. Among various thiophene building blocks, thieno[3,4-b]thiophene (TbT) is an asymmetric fused bithiophene containing four functionalization positions, in which the proaromatic thiophene can effectively stabilize the quinoidal resonance of the aromatic thiophene. Thus, TbT exhibits a unique characteristic of quinoid-resonance effect that is powerful to modulate electronic structures. Although the application of TbT in polymer donor materials represented by PTB-7 has achieved a great success, its application in small-molecule optoelectronic materials is almost an untouched field. In this Account, we summerize the rational design of a series of TbT-based small-molecule optoelectronic materials designed and optimized by quinoid-resonance effect, regiochemistry, and side-chain engineering and

  18. Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects

    NASA Astrophysics Data System (ADS)

    Gao, Yuanda

    Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects. After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz. On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ?0.1 dB/?m transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed. The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.

  19. Study of application and key technology of the high-energy laser weapon in optoelectronic countermeasure

    NASA Astrophysics Data System (ADS)

    Qu, Zhou; Xing, Hao; Wang, Dawei; Wang, Qiugui

    2015-10-01

    High-energy Laser weapon is a new-style which is developing rapidly nowadays. It is a one kind of direction energy weapon which can destroy the targets or make them invalid. High-energy Laser weapon has many merits such as concentrated energy, fast transmission, long operating range, satisfied precision, fast shift fire, anti-electromagnetic interference, reusability, cost-effectiveness. High-energy Laser weapon has huge potential for modern warfare since its laser beam launch attack to the target by the speed of light. High-energy Laser weapon can be deployed by multiple methods such as skyborne, carrier borne, vehicle-mounted, foundation, space platform. Besides the connection with command and control system, High-energy Laser weapon is consist of high-energy laser and beam steering. Beam steering is comprised of Large diameter launch system and Precision targeting systems. Meanwhile, beam steering includes the distance measurement of target location, detection system of television and infrared sensor, adaptive optical system of Laser atmospheric distortion correction. The development of laser technology is very fast in recent years. A variety of laser sources have been regarded as the key component in many optoelectronic devices. For directed energy weapon, the progress of laser technology has greatly improved the tactical effectiveness, such as increasing the range and strike precision. At the same time, the modern solid-state laser has become the ideal optical source for optical countermeasure, because it has high photoelectric conversion efficiency and small volume or weight. However, the total performance is limited by the mutual cooperation between different subsystems. The optical countermeasure is a complex technique after many years development. The key factor to evaluate the laser weapon can be formulated as laser energy density to target. This article elaborated the laser device technology of optoelectronic countermeasure and Photoelectric tracking

  20. Preparation, characterization and optoelectronic properties of nanodiamonds doped zinc oxide nanomaterials by a ball milling technique

    NASA Astrophysics Data System (ADS)

    Ullah, Hameed; Sohail, Muhammad; Malik, Uzma; Ali, Naveed; Bangash, Masroor Ahmad; Nawaz, Mohsan

    2016-07-01

    Zinc oxide (ZnO) is one of the very important metal oxides (MOs) for applications in optoelectronic devices which work in the blue and UV regions. However, to meet the challenges of obtaining ZnO nanomaterials suitable for practical applications, various modifications in physico-chemical properties are highly desirable. One of the ways adopted for altering the properties is to synthesize composite(s) of ZnO with various reinforcements. Here we report on the tuning of optoelectronic properties of ZnO upon doping by nanodiamonds (NDs) using the ball milling technique. A varying weight percent (wt.%) of NDs were ball milled for 2 h with ZnO nanoparticles prepared by a simple precipitation method. The effects of different parameters, the calcination temperature of ZnO, wt.% of NDs and mechanical milling upon the optoelectronic properties of the resulting ZnO-NDs nanocomposites have been investigated. The ZnO-NDs nanocomposites were characterized by IR spectroscopy, powder x-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The UV-vis spectroscopy revealed the alteration in the bandgap energy (Eg ) of ZnO as a function of the calcination temperature of ZnO, changing the concentration of NDs, and mechanical milling of the resulting nanocomposites. The photoluminescence (PL) spectroscopy showed a decrease in the deep level emission (DLE) peaks and an increase in near-band-edge transition peaks as a result of the increasing concentration of NDs. The decrease in DLE and increase in band to band transition peaks were due to the strong interaction between the NDs and the Zn+; consequently, the Zn+ concentration decreased on the interstitial sites.

  1. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    SciTech Connect

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated

  2. Programmable manipulation of motile cells in optoelectronic tweezers using a grayscale image

    NASA Astrophysics Data System (ADS)

    Choi, Wonjae; Nam, Seong-Won; Hwang, Hyundoo; Park, Sungsu; Park, Je-Kyun

    2008-10-01

    This paper describes a grayscale optoelectronic tweezers (OET) which allows adjustment of the electric field strength at each position of OET. A grayscale light image was used to pattern vertical electric field strength on an OET. As an electric field depends on the brightness at each point, the brighter light patterns generate the stronger electric field in the OET. Its feasibility for application to cell manipulation was demonstrated by aligning highly motile protozoan cells in vertical direction. Depending on the brightness of each pixel, the behaviors of aligned cells varied due to the different electric field strength to each cell.

  3. Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications.

    PubMed

    Breuer, Steffen; Pfüller, Carsten; Flissikowski, Timur; Brandt, Oliver; Grahn, Holger T; Geelhaar, Lutz; Riechert, Henning

    2011-03-09

    The incorporation of Au during vapor-liquid-solid nanowire growth might inherently limit the performance of nanowire-based devices. Here, we assess the material quality of Au-assisted and Au-free grown GaAs/(Al,Ga)As core-shell nanowires using photoluminescence spectroscopy. We show that at room temperature, the internal quantum efficiency is systematically much lower for the Au-assisted nanowires than for the Au-free ones. In contrast, the optoelectronic material quality of the latter is comparable to that of state-of-the-art planar double heterostructures.

  4. Optoelectronic Investigation of Sb-Doped Cu(In, Ga)Se2

    SciTech Connect

    Mansfield, Lorelle M.; Kuciauskas, Darius; Dippo, Patricia; Li, Jian V.; Bowers, Karen; To, Bobby; DeHart, Clay; Ramanathan, Kannan

    2015-06-14

    Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.

  5. Operational parameters of an opto-electronic neural network employing fixed planar holographic interconnects

    SciTech Connect

    Keller, P.E.; Gmitro, A.F.

    1993-07-01

    A prototype neutral network system of multifaceted, planar interconnection holograms and opto-electronic neurons is analyzed. This analysis shows that a hologram fabricated with electron-beam lithography has the capacity to connect 6700 neuron outputs to 6700 neuron inputs and that the encoded synaptic weights have a precision of approximately 5 bits. Higher interconnection densities can be achieved by accepting a lower synaptic weight accuracy. For systems employing laser diodes at the outputs of the neurons, processing rates in the range of 45 to 720 trillion connections per second can potentially be achieve.

  6. Fused thiophene-based conjugated polymers and their use in optoelectronic devices

    SciTech Connect

    Facchetti, Antonio; Marks, Tobin J; Takai, Atsuro; Seger, Mark; Chen, Zhihua

    2015-11-03

    The present teachings relate to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

  7. Recent Developments of an Opto-Electronic THz Spectrometer for High-Resolution Spectroscopy

    PubMed Central

    Hindle, Francis; Yang, Chun; Mouret, Gael; Cuisset, Arnaud; Bocquet, Robin; Lampin, Jean-François; Blary, Karine; Peytavit, Emilien; Akalin, Tahsin; Ducournau, Guillaume

    2009-01-01

    A review is provided of sources and detectors that can be employed in the THz range before the description of an opto-electronic source of monochromatic THz radiation. The realized spectrometer has been applied to gas phase spectroscopy. Air-broadening coefficients of HCN are determined and the insensitivity of this technique to aerosols is demonstrated by the analysis of cigarette smoke. A multiple pass sample cell has been used to obtain a sensitivity improvement allowing transitions of the volatile organic compounds to be observed. A solution to the frequency metrology is presented and promises to yield accurate molecular line center measurements. PMID:22291552

  8. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

    NASA Astrophysics Data System (ADS)

    Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He-Hau, Jr.

    2016-09-01

    Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells.

  9. Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

    NASA Technical Reports Server (NTRS)

    Richard, M. A.; Claspy, P. C.; Bhasin, K. B.; Bendett, M. B.

    1990-01-01

    Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs monolithic microwave integrated circuit (MMIC) based phased array antennas. The performance of a hybrid GaAs optoelectronic integrated circuit (OEIC) is described, as well as its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 30b Mbps. The performance characteristics and potential applications of the device are presented.

  10. Reservoir computing with a slowly modulated mask signal for preprocessing using a mutually coupled optoelectronic system

    NASA Astrophysics Data System (ADS)

    Tezuka, Miwa; Kanno, Kazutaka; Bunsen, Masatoshi

    2016-08-01

    Reservoir computing is a machine-learning paradigm based on information processing in the human brain. We numerically demonstrate reservoir computing with a slowly modulated mask signal for preprocessing by using a mutually coupled optoelectronic system. The performance of our system is quantitatively evaluated by a chaotic time series prediction task. Our system can produce comparable performance with reservoir computing with a single feedback system and a fast modulated mask signal. We showed that it is possible to slow down the modulation speed of the mask signal by using the mutually coupled system in reservoir computing.

  11. Synthesis and characterization of ZnO nanostructured film for optoelectronic applications

    SciTech Connect

    Kumar, Vijay E-mail: sanjeev04101977@gmail.com; Singh, Harpreetpal

    2015-05-15

    ZnO nanostructured film is synthesized by solution combustion technique. X-ray diffraction (XRD) studies show that preferred orientation is along (101) confirming the hexagonal wurtzite phase and no secondary phase is observed. The rietveld refinement of the XRD data was used to calculate different lattice parameters. I-V characterization of ZnO film shows non linear behavior. These ZnO films are photosensitive, may be due to defect states. This property of these films can be utilized in optoelectronic applications.

  12. Quantum-well intermixing for optoelectronic integration using high energy ion implantation

    NASA Astrophysics Data System (ADS)

    Charbonneau, S.; Poole, P. J.; Piva, P. G.; Aers, G. C.; Koteles, E. S.; Fallahi, M.; He, J.-J.; McCaffrey, J. P.; Buchanan, M.; Dion, M.; Goldberg, R. D.; Mitchell, I. V.

    1995-09-01

    The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2-8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy.

  13. Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics.

    PubMed

    Madéo, Julien; Margiolakis, Athanasios; Zhao, Zhen-Yu; Hale, Peter J; Man, Michael K L; Zhao, Quan-Zhong; Peng, Wei; Shi, Wang-Zhou; Dani, Keshav M

    2015-07-15

    We report on the first terahertz (THz) emitter based on femtosecond-laser-ablated gallium arsenide (GaAs), demonstrating a 65% enhancement in THz emission at high optical power compared to the nonablated device. Counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. We understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. Our results show that laser ablation allows for efficient and cost-effective optoelectronic THz devices via the manipulation of fundamental properties of materials.

  14. III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon)

    DTIC Science & Technology

    1992-06-01

    The laser fabrication begins with the patterning of for optoelectronic integrated circuits (OEICs), a planar 1 000 A of Si3N4 into rings [25-jim-wide...is grown in the center of the wave- guide in the lateral direction. guide layer. The effect of the optical waveguide is shown by the The laser ... fabrication begins with the deposition on the near-field (NF) pattern in the inset (b) of the -2-jim- crystal of - 1000 Ak Si 3N4, which is patterned with

  15. Optoelectronics research for communication programs at the Goddard Space Flight Center

    NASA Technical Reports Server (NTRS)

    Krainak, Michael A.

    1991-01-01

    Current optoelectronics research and development of high-power, high-bandwidth laser transmitters, high-bandwidth, high-sensitivity optical receivers, pointing, acquisition and tracking components, and experimental and theoretical system modeling at the NASA Goddard Space Flight Center is reviewed. Program hardware and space flight milestones are presented. It is believed that these experiments will pave the way for intersatellite optical communications links for both the NASA Advanced Tracking and Data Relay Satellite System and commercial users in the 21st century.

  16. Record low temperature Mo doped V2O5 thermochromic thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Nazemiyan, M.; Jalili, Y. S.

    2013-11-01

    Thermochromic properties of polycrystalline molybdenum doped vanadium pentoxide thin films grown by the spray pyrolysis technique were investigated. Tetragonal thin film structures of this system are grown. The transmittance spectral analysis with temperature indicates a record semiconductor-metal transition temperature of < 50oC. This critical temperature is approximately 1/3 to 1/6 of magnitude expected for V2O5 thin films. The resistance of the thermochromic thin film also underwent a transition or phase change as expected, a reduction from more than few mega ohms to less than kilo ohm regime indicating potential applications in optoelectronics.

  17. Optoelectronic Tweezers as a Tool for Parallel Single-Cell Manipulation and Stimulation

    PubMed Central

    Valley, Justin K.; Ohta, Aaron T.; Hsu, Hsan-Yin; Neale, Steven L.; Jamshidi, Arash; Wu, Ming C.

    2010-01-01

    Optoelectronic tweezers (OET) is a promising approach for the parallel manipulation of single cells for a variety of biological applications. By combining the manipulation capabilities of OET with other relevant biological techniques (such as cell lysis and electroporation), one can realize a true parallel, single-cell diagnostic and stimulation tool. Here, we demonstrate the utility of the OET device by integrating it onto single-chip systems capable of performing in-situ, electrode-based electroporation/lysis, individual cell, light-induced lysis, and light-induced electroporation. PMID:20543904

  18. Pump-probe spectroscopy in organic semiconductors: monitoring fundamental processes of relevance in optoelectronics.

    PubMed

    Cabanillas-Gonzalez, Juan; Grancini, Giulia; Lanzani, Guglielmo

    2011-12-08

    In this review we highlight the contribution of pump-probe spectroscopy to understand elementary processes taking place in organic based optoelectronic devices. The techniques described in this article span from conventional pump-probe spectroscopy to electromodulated pump-probe and the state-of-the-art confocal pump-probe microscopy. The article is structured according to three fundamental processes (optical gain, charge photogeneration and charge transport) and the contribution of these techniques on them. The combination of these tools opens up new perspectives for assessing the role of short-lived excited states on processes lying underneath organic device operation.

  19. Optoelectronic performance optimization for transparent conductive layers based on randomly arranged silver nanorods.

    PubMed

    Marus, Mikita; Hubarevich, Aliaksandr; Wang, Hong; Smirnov, Aliaksandr; Sun, Xiaowei; Fan, Weijun

    2015-03-09

    Optoelectronic performance of transparent conductive layers (TCLs) based on randomly arranged silver (Ag) nanorods (NRs) is simulated. Models for calculation of optical and electronic properties were proposed founded on finite-difference time-domain method and percolation theory respectively. Obtained simulation results are well conformed to experimental data. The influence of angle deviation of NR crossings on the transmittance and sheet resistance are demonstrated. The balance between transmittance and sheet resistance which can be easily set by varying the combinations of NR radius and NR number is shown. Our results demonstrate that randomly arranged Ag layers are promising candidates for flexible TCLs.

  20. New blue emissive conjugated small molecules with low lying HOMO energy levels for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Trupthi Devaiah, C.; Hemavathi, B.; Ahipa, T. N.

    2017-03-01

    Versatile conjugated small molecules bearing cyanopyridone core (CP1-5), composed of various donor/acceptor moieties at position - 4 and - 6 have been designed, developed and characterized. Their solvatochromic studies were conducted and analyzed using Lippert-Mataga, Kamlet-Taft and Catalan solvent scales and interesting results were obtained. The polarizability/dipolarity of the solvent greatly influenced the spectra. The electrochemical studies were carried out using cyclic voltammetry to calculate the HOMO-LUMO energy levels. The study revealed that the synthesized conjugated small molecules possess low lying HOMO energy levels which can be exploited for application in various fields of optoelectronics.

  1. Displacement measurement using an optoelectronic oscillator with an intra-loop Michelson interferometer.

    PubMed

    Lee, Jehyun; Park, Sooyoung; Seo, Dae Han; Yim, Sin Hyuk; Yoon, Seokchan; Cho, D

    2016-09-19

    We report on measurement of small displacements with sub-nanometer precision using an optoelectronic oscillator (OEO) with an intra-loop Michelson interferometer. In comparison with conventional homodyne and heterodyne detection methods, where displacement appears as a power change or a phase shift, respectively, in the OEO detection, the displacement produces a shift in the oscillation frequency. In comparison with typical OEO sensors, where the frequency shift is proportional to the OEO oscillation frequency in radio-frequency domain, the frequency shift in our method with an intra-loop interferometer is proportional to an optical frequency. We constructed a hybrid apparatus and compared characteristics of the OEO and heterodyne detection methods.

  2. Wideband tunable optoelectronic oscillator based on a phase modulator and a tunable optical filter.

    PubMed

    Xie, Xiaopeng; Zhang, Cheng; Sun, Tao; Guo, Peng; Zhu, Xiaoqi; Zhu, Lixin; Hu, Weiwei; Chen, Zhangyuan

    2013-03-01

    A widely tunable optoelectronic oscillator (OEO) based on a broadband phase modulator and a tunable optical bandpass filter is proposed and experimentally demonstrated. A tunable range from 4.74 to 38.38 GHz is realized by directly tuning the bandwidth of the optical bandpass filter. To the best of our knowledge, this is the widest fundamental frequency tunable range ever achieved by an OEO. The phase noise performance of the generated signal is also investigated. The single-sideband phase noise is below -120 dBc/Hz at an offset of 10 KHz within the whole tunable range.

  3. Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

    SciTech Connect

    Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

    2014-04-01

    A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

  4. Thin film of the PVK and PPV applied in optoelectronic organic sensor

    NASA Astrophysics Data System (ADS)

    Guedes, Andre F. S.; Guedes, Vilmar P.; Tartari, Simone; Cunha, Idaulo Jose

    2016-09-01

    Phototherapy makes use of different radiation sources, and the treatment of hyperbilirubinemia the most common therapeutic intervention occurs in the neonatal period. In this work we developed an organic optoelectronic sensor capable of detecting and determining the radiation dose rate emitted by the radiation source of neonatal phototherapy equipment. The sensors were developed using optically transparent substrate with Nanostructured thin film layers of Poly(9-Vinylcarbazole) covered by a layer of Poly(P-Phenylene Vinylene). The samples were characterized by UV-Vis Spectroscopy, Electrical Measurements and SEM. With the results obtained from this study can be developed dosimeters organics to the neonatal phototherapy equipment.

  5. Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy

    SciTech Connect

    Nataraj, L.; Sustersic, N.; Coppinger, M.; Gerlein, L. F.; Kolodzey, J.; Cloutier, S. G.

    2010-03-22

    We report on the structural and optoelectronic properties of self-assembled germanium-rich islands grown on silicon using molecular beam epitaxy. Raman, photocurrent, photoluminescence, and transient optical spectroscopy measurements suggest significant built-in strains and a well-defined interface with little intermixing between the islands and the silicon. The shape of these islands depends on the growth conditions and includes pyramid, dome, barn-shaped, and superdome islands. Most importantly, we demonstrate that these germanium-rich islands provide efficient light emission at telecommunication wavelengths on a complementary metal-oxide semiconductor-compatible platform.

  6. Zinc oxide nanostructures with metal particles based on surface plasmons for optoelectronic device applications

    NASA Astrophysics Data System (ADS)

    Yu, Jae Su; Ko, Yeong Hwan; Lee, Hee Kwan; Leem, Jung Woo

    2011-02-01

    We fabricate various ZnO (zinc oxide) nanostructures, such as nanorods, nanotips and nanoflowers, as well as ZnO subwavelength grating structures for applications in optoelectronic devices such as solar cells, light emitting diodes, and biosensors. The optical properties are theoretically analyzed using the rigorous coupled-wave analysis method. The fabricated ZnO nanostructures are of wurzite crystal structure. The reflection and absorption characteristics depend strongly on the shape and geometry of Zn nanostructures. The ZnO nanostructures with Au (or Ag) particles, based on surface plasmons, are also investigated.

  7. High-Q wavelength division multiplexed optoelectronic oscillator based on a cascaded multi-loop topology

    NASA Astrophysics Data System (ADS)

    Charalambous, Georgios; Hasanuzzaman, G. K. M.; Perentos, Andreas; Iezekiel, Stavros

    2017-03-01

    A WDM optoelectronic oscillator (OEO) based on a cascaded optical multi-loop configuration and multiple photodiodes is proposed and demonstrated experimentally. By employing up to three lasers widely separated in wavelength along with two cascaded multi-loop fiber sections and two photodiodes, we demonstrate OEO topologies that scale up to six effective loops revealing an ultra-high quality factor in excess of 1010 and a phase noise performance down to -119 dBc/Hz at 10 kHz offset

  8. Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

    NASA Technical Reports Server (NTRS)

    Richard, M. A.; Claspy, P. C.; Bhasin, K. B.; Bendett, M. P.

    1990-01-01

    Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs MMIC-based phased array antennas. This paper describes the performance of a hybrid GaAs optoelectronic integrated circuit (OEIC), along with a description of its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 305 Mbps. The performance characteristics as well as potential applications of the device are presented.

  9. Optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Sperling, Leslie H.; Murphy, Clarence J.; Rosen, Warren A.; Jain, Himanshu

    1990-07-01

    This invention relates to acrylic polymers and more specifically to polyacrylamides and polyacrylates such as poly(2-((N-2-methyl-5-nitrophenylamino) ethyl acrylate)) and poly((N-2-methyl-4-nitrophenyl)acrylamide). These acrylic polymers are particularly useful as nonlinear optical components in various electrical devices for processing optical signals including interferometors, optical switches, optical amplifiers, generators, computational devices and the like.

  10. Enhanced multi-hop operation using hybrid optoelectronic router with time-to-live-based selective forward error correction.

    PubMed

    Nakahara, Tatsushi; Suzaki, Yasumasa; Urata, Ryohei; Segawa, Toru; Ishikawa, Hiroshi; Takahashi, Ryo

    2011-12-12

    Multi-hop operation is demonstrated with a prototype hybrid optoelectronic router for optical packet switched networks. The router is realized by combining key optical/optoelectronic device/sub-system technologies and complementary metal-oxide-semiconductor electronics. Using the hop count monitored via the time-to-live field in the packet label, the optoelectronic buffer of the router performs buffering with forward error correction selectively for packets degraded due to multiple hopping every N hops. Experimental results for 10-Gb/s optical packets confirm that the scheme can expand the number of hops while keeping the bit error rate low without the need for optical 3R regenerators at each node.

  11. Approaches to optical neuromodulation from rodents to non-human primates by integrated optoelectronic devices.

    PubMed

    Wang, Jing; Ozden, Ilker; Diagne, Mohamed; Wagner, Fabien; Borton, David; Brush, Benjamin; Agha, Naubahar; Burwell, Rebecca; Sheinberg, David; Diester, Ilka; Deisseroth, Karl; Nurmikko, Arto

    2011-01-01

    Methods on rendering neurons in the central nervous system to be light responsive has led to a boom in using optical neuromodulation as a new approach for controlling brain states and understanding neural circuits. In addition to the developing versatility to "optogenetically" labeling of neural cells and their subtypes by microbiological methods, parallel efforts are under way to design and implement optoelectronic devices to achieve simultaneous optical neuromodulation and electrophysiological recording with high spatial and temporal resolution. Such new device-based technologies need to be developed for full exploitation of the promise of optogenetics. In this paper we present single- and multi-element optoelectronic devices developed in our laboratories. The single-unit element, namely the coaxial optrode, was utilized to characterize the neural responses in optogenetically modified rodent and primate models. Furthermore, the multi-element device, integrating the optrode with a 6×6 microelectrode array, was used to characterize the spatiotemporal spread of neural activity in response to single-site optical stimulation in freely moving rats. We suggest that the particular approaches we employed can lead to the emergence of methods where spatio-temporal optical modulation is integrated with real-time read out from neural populations.

  12. Investigation of charge transport and electromagnetic effects in advanced microelectronics and optoelectronics

    SciTech Connect

    Kwan, T.; Booth, T.; Gray, M.

    1996-07-01

    This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The next generation of electronic microchips will utilize components with sub-micron feature size and optoelectronic devices with picosecond response time. Fundamental understanding of the device performance can only be obtained through first principles physics modeling of charge transport and electromagnetic effects in realistic geometries with material interfaces and dispersive properties. We have developed a general model incorporating important physics such as charge transport processes in materials with multilevel band structures and electromagnetic effects to simulate device characteristics. Accurate treatment of material interfaces and boundaries is included. The Monte Carlo charge transport is coupled self-consistently to Maxwell`s equations to accurately model scattering processes in the presence of an externally biased potential. This detailed multidimensional simulation capability is compared with and verified by experimental data, and could become an industrial standard for benchmarking and improving the {open_quotes}reduced model{close_quotes} codes used for semiconductor design. Specific tasks are the extension of existing capabilities in particle-in-cell plasma simulation technique and Monte Carlo charge transport to study the physics of charged particle dynamics in realistic microelectronic devices, such as bipolar semiconductors, heterojunction transistors, and optoelectronic switches. Our approach has been based on the coupled particle-in-cell/Monte Carlo technique, which can simultaneously treat both electromagnetic wave propagation and charged-particle transport.

  13. Overview of studies and developments in cinematography, optoelectronic imaging, and photonics at CEA/DIF

    NASA Astrophysics Data System (ADS)

    Mens, Alain; Alozy, Eric; Aubert, Damien; Benier, Jacky; Bourgade, Jean-Luc; Boutin, Jean-Yves; Brunel, Patrick; Charles, Gilbert; Chollet, Clement; Desbat, Laurent; Gontier, Dominique; Jacquet, Henri-Patrick; Jasmin, Serge; Le Breton, Jean-Pierre; Marchet, Bruno; Masclet-Gobin, Isabelle; Mercier, Patrick; Millier, Philippe; Missault, Carole; Negre, Jean-Paul; Paul, Serge; Rosol, Rodolphe; Sommerlinck, Thierry; Veaux, Jacqueline; Veron, Laurent; Vincent de Araujo, Manuel; Jaanimagi, Paul; Pien, Greg

    2003-07-01

    This paper gives an overview of works undertaken at CEA/DIF in high speed cinematography, optoelectronic imaging and ultrafast photonics for the needs of the CEA/DAM experimental programs. We have developed a new multichannel velocimeter, and a new probe for shock breakout timing measurements in detonics experiments. A brief description and a recall of their main performances will be made. We have implemented three new optoelectronic imaging systems, in order to observe dynamic scenes in the ranges of 50 - 100 keV and 4 MeV. These systems are described, their main specifications and performances are given. Then we describe our contribution to the ICF program: after recalling the specifications of LIL plasma diagnostics, we describe the features and performances of visible streak tubes, X-ray streak tubes, visible and X-ray framing cameras and the associated systems developed to match these specifications. At last we introduce the subject of components and systems vulnerability in the LMJ target area, the principles identified to mitigate this problem and the first results of studies (image relay, response of streak tube phosphors, MCP image intensifiers and CCDs to fusion neutrons) related to this subject. Results obtained so far are presented.

  14. Ag nanoparticles/PPV composite nanofibers with high and sensitive opto-electronic response

    NASA Astrophysics Data System (ADS)

    Chen, Jinfeng; Yang, Peipei; Wang, Chunjiao; Zhan, Sumei; Zhang, Lianji; Huang, Zonghao; Li, Wenwen; Wang, Cheng; Jiang, Zijiang; Shao, Chen

    2011-12-01

    The novel Ag nanoparticles/poly( p-phenylene vinylene) [PPV] composite nanofibers were prepared by electrospinning. The transmission electron microscope image shows that the average diameter of composite fibers is about 500 nm and Ag nanoparticles are uniformly dispersed in the PPV matrix with an average diameter of about 25 nm. The Fourier transform infrared spectra suggest that there could be a coordination effect to a certain extent between the Ag atom and the π system of PPV, which is significantly favorable for the dissociation of photoexcitons and the charge transfer at the interface between the Ag nanoparticle and the PPV. The Au top electrode device of the single Ag/PPV composite nanofiber exhibits high and sensitive opto-electronic responses. Under light illumination of 5.76 mW/cm2 and voltage of 20 V, the photocurrent is over three times larger than the dark current under same voltage, which indicates that this kind of composite fiber is an excellent opto-electronic nanomaterial.

  15. Tunable optoelectronic properties of CBD-CdS thin films via bath temperature alterations

    NASA Astrophysics Data System (ADS)

    Kumarage, W. G. C.; Wijesundera, R. P.; Seneviratne, V. A.; Jayalath, C. P.; Dassanayake, B. S.

    2016-03-01

    The tunability of the band-gap value and electron affinity of the n-CdS by adjusting the growth parameters is very important as it paves the way to improve the efficiency of CdS-based solar cells by adjusting the band lineup with other p-type semiconductors. In this respect, polycrystalline n-CdS thin films were grown on FTO glass substrates at different bath temperatures (40-80 °C) by the chemical bath deposition technique. The structural, morphological and optoelectronic properties of CdS thin films were studied using x-ray diffraction, scanning electron microscopy, UV-Vis spectrometry, profilometry, atomic force microscopy, photoelectrochemical and Mott-Schottky measurements. Absorption measurements reveal that an energy-gap value of n-CdS can be adjusted from 2.27 to 2.57 eV and Mott-Schottky measurements indicate that the flat-band potential is increased from  -699 to  -835 V with respect to a Ag/AgCl electrode by decreasing the deposition bath temperature from 60 to 40 °C. This tunability of optoelectronic properties of n-CdS is very useful for applications in thin film solar cells and other devices.

  16. The Effect of Illumination on the Gelation Process of Optoelectronic Materials

    NASA Astrophysics Data System (ADS)

    Morgan, Brian; Dadmun, Mark

    2015-03-01

    A tremendous amount of insight into the functionality of conjugated polymers in optoelectronic devices can be gained by the study of these materials as they progress through the gelation process. The nature of the percolated network structures formed directly affects exciton transport and device efficiency, thus precise knowledge of the evolution of structures provides crucial information towards improving device efficiency via processing techniques. Additionally, select optoelectronic polymers have exhibited reversibly altered physical properties such as viscosity upon exposure to white light, potentially indicative of temporary conformation changes. We have conducted a series of small angle neutron scattering experiments to probe the temperature-driven gelation process of the conjugated photoactive polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) in both the presence and complete absence of white light. Fitting the resultant data indicates the creation and steady growth of cylindrical aggregates formed by the agglomeration of free chain P3HT as the growth process. Furthermore, clear differences between illuminated and non-illuminated gels are observed across multiple length scales, pointing towards an optically-induced variation in the gelation process.

  17. Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics.

    PubMed

    Zhuang, Q D; Alradhi, H; Jin, Z M; Chen, X R; Shao, J; Chen, X; Sanchez, Ana M; Cao, Y C; Liu, J Y; Yates, P; Durose, K; Jin, C J

    2017-03-10

    InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.

  18. Hierarchically structured ZnO/petal hybrid composites with tuned optoelectronic and mechanical properties.

    PubMed

    Park, Cheolmin; So, Hye-Mi; Jeong, Hyeon Jun; Jeong, Mun Seok; Pippel, Eckhard; Chang, Won Seok; Lee, Seung-Mo

    2014-09-24

    Impressive biophotonic functions of flora in Mother Nature are often attributed to the optical diffraction occurring on hierarchically structured surfaces. The petals, displaying vivid colors, have diverse surface structures. The shapes of those structures alter significantly depending on the part of the petal, and they adjust the intensity of the reflected color and the light absorbance. Here, we added semiconducting properties to those intriguing optical functions arising from the unique surface structures. By means of atomic layer deposition (ALD), we conformally deposited a ZnO layer on the yellow rose petal, which has hierarchical surface structures and exhibits peculiar light absorbance behaviors. The resulting ZnO/petal composites revealed unique optoelectronic characteristics by synergetic effects between the biophotonic structures and inherent semiconducting properties. From several control experiments, we identified that the biophotonic hierarchical structures give rise to strong modulation of the light absorbance. We found that ZnO/petal exhibits superior mechanical stability to the raw petal likely due to the Zn infiltration into the petal. The design inspired by floral creatures with photonic structures and manufactured in the form of composite with mechanical stability and distinctive optoelectronic properties is believed to offer a new paradigm for the preparation of bioinspired photonic devices.

  19. Resolving local voltage variations in opto-electronic devices with Kelvin probe force microscopy

    NASA Astrophysics Data System (ADS)

    Tennyson, Elizabeth; Garrett, Joseph; Munday, Jeremy; Leite, Marina

    We employ illuminated Kelvin probe force microscopy (KPFM) to spatially resolve the open-circuit voltage (Voc) of optoelectronic devices with nanoscale spatial resolution, >5 orders of magnitude better than previous methods. In illuminated-KPFM, we measure the difference in work function between the sample surface and the probe, termed the contact potential difference (CPD). By grounding the bottom contact of the solar cell to the AFM probe, the difference between the illuminated and the dark signals is proportional to quasi-Fermi level splitting and, therefore, the Voc. We apply our scanning probe technique to a variety of solar cell materials, including polycrystalline CIGS, where we resolve local variations in Voc >150 mV. We use heterodyne-KPFM (where we map 1 μm2 in 16 seconds) to probe hybrid perovskites solar cells, and quantify in real-time the voltage changes upon material relaxation after illumination. This metrology yields new insights into the local electrical properties of solar cells, and can be expanded to any optoelectronic device.

  20. Kelvin probe force microscopy: imaging open-circuit voltage in optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Tennyson, Elizabeth; Garrett, Joseph; Frantz, Jesse; Myers, Jason; Bekele, Robel; Sanghera, Jasbinder; Munday, Jeremy; Leite, Marina

    2015-03-01

    Scanning probe microscopy has been successfully implemented to probe the electrical characteristics of optoelectronic devices. Currently, a method that directly correlates measured signals to device performance is missing. We implement illuminated Kelvin probe force microscopy (KPFM) to spatially resolve the open-circuit voltage of optoelectronics with nanoscale resolution, 5 orders of magnitude better than previous methods. In illuminated-KPFM, the surface photovoltage, is the difference between the contact potential difference under illumination and in the dark, and proportional to the Fermi level splitting. We apply our imaging method to a variety of solar cells and find that the open-circuit voltage in some materials varies locally by >0.2 V, suggesting the spatial variation of non-radiative recombination strongly affects performance. A detailed examination of possible topography pick-up was excluded by measuring samples with modified surface morphology and considering the tip-sample separation dependence of the signal. This novel metrology enables new insights into the loss mechanisms that hinder solar cells and provides a new platform to image device performance with nanoscale resolution.

  1. Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells.

    PubMed

    Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

    2017-12-01

    The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

  2. Quantum dot-based organic-inorganic hybrid materials for optoelectronic applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Lee, Kwang-Sup

    2016-10-01

    Our recent research involves the design, characterization and testing of devices constituting low bandgap conjugated polymers, surface-engineered quantum dots (QDs), carbon nanotube (CNT)-QDs, QDs decorated nanowires, and QD coupled conjugated polymers. The resulting hybrid materials can be used for facilitating the charge/energy transfer and enhancing the charge carrier mobility in highly efficient optoelectronic and photonic devices. Exploiting the full potential of quantum dots (QDs) in optoelectronic devices require efficient mechanisms for transfer of energy or electrons produced in the optically excited QDs. We propose semiconducting π-conjugated molecules as ligands to achieve energy or charge transfer. The hybridization of p-type π-conjugated molecules to the surface of n-type QDs can induce distinct luminescence and charge transport characteristics due to energy and/or charge transfer effects. QDs and π-conjugated molecule hybrids with controlled luminescent properties can be used for new active materials for light-emitting diodes and flexible displays. In addition, such hybrid systems with enhanced charge transfer efficiency can be used for nanoscale photovoltaic devices. We have also explored single nanoparticle based electronics using QDs and π-conjugated molecule hybrids with molecular-scale n-p or n-insulating (ins)-p-heterojunction structures.

  3. Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells

    NASA Astrophysics Data System (ADS)

    Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

    2017-01-01

    The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

  4. RIR-MAPLE deposition of conjugated polymers and hybrid nanocomposites for application to optoelectronic devices

    SciTech Connect

    Stiff-Roberts, Adrienne D.; Pate, Ryan; McCormick, Ryan; Lantz, Kevin R.

    2012-07-30

    Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) is a variation of pulsed laser deposition that is useful for organic-based thin films because it reduces material degradation by selective absorption of infrared radiation in the host matrix. A unique emulsion-based RIR-MAPLE approach has been developed that reduces substrate exposure to solvents and provides controlled and repeatable organic thin film deposition. In order to establish emulsion-based RIR-MAPLE as a preferred deposition technique for conjugated polymer or hybrid nanocomposite optoelectronic devices, studies have been conducted to demonstrate the value added by the approach in comparison to traditional solution-based deposition techniques, and this work will be reviewed. The control of hybrid nanocomposite thin film deposition, and the photoconductivity in such materials deposited using emulsion-based RIR-MAPLE, will also be reviewed. The overall result of these studies is the demonstration of emulsion-based RIR-MAPLE as a viable option for the fabrication of conjugated polymer and hybrid nanocomposite optoelectronic devices that could yield improved device performance.

  5. An opto-electronic joint detection system based on DSP aiming at early cervical cancer screening

    NASA Astrophysics Data System (ADS)

    Wang, Weiya; Jia, Mengyu; Gao, Feng; Yang, Lihong; Qu, Pengpeng; Zou, Changping; Liu, Pengxi; Zhao, Huijuan

    2015-02-01

    The cervical cancer screening at a pre-cancer stage is beneficial to reduce the mortality of women. An opto-electronic joint detection system based on DSP aiming at early cervical cancer screening is introduced in this paper. In this system, three electrodes alternately discharge to the cervical tissue and three light emitting diodes in different wavelengths alternately irradiate the cervical tissue. Then the relative optical reflectance and electrical voltage attenuation curve are obtained by optical and electrical detection, respectively. The system is based on DSP to attain the portable and cheap instrument. By adopting the relative reflectance and the voltage attenuation constant, the classification algorithm based on Support Vector Machine (SVM) discriminates abnormal cervical tissue from normal. We use particle swarm optimization to optimize the two key parameters of SVM, i.e. nuclear factor and cost factor. The clinical data were collected on 313 patients to build a clinical database of tissue responses under optical and electrical stimulations with the histopathologic examination as the gold standard. The classification result shows that the opto-electronic joint detection has higher total coincidence rate than separate optical detection or separate electrical detection. The sensitivity, specificity, and total coincidence rate increase with the increasing of sample numbers in the training set. The average total coincidence rate of the system can reach 85.1% compared with the histopathologic examination.

  6. Simulation and Numerical Modeling of the Self-assembly of an Optoelectronic Peptide

    NASA Astrophysics Data System (ADS)

    Mansbach, Rachael; Ferguson, Andrew

    We report molecular dynamics simulations of the self-assembly of synthetic π-conjugated oligopeptides into optoelectronic nanostructures. The electronic properties provide the basis for an array of organic electronic devices, such as light-emitting diodes, field-effect transistors, and solar cells. Control of the structure, stability, and kinetics of self-assembled organic electronics by tuning monomer chemistry and environmental conditions presents a powerful route to the fabrication of biocompatible ``designer materials.'' We have performed coarse-grained simulations of the self-assembly of several hundred peptides over microsecond time scales to probe the morphology and kinetics of aggregation with molecular-level detail. We have subsequently used this simulation data to parameterize a kinetic aggregation model based on Smoluchowski coagulation theory to enable prediction of aggregation dynamics on millisecond time scales. These numerical models are now being integrated into a multi-physics model of peptide aggregation in a microfluidic flow cell developed by our experimental collaborators to model the self-assembly of diverse peptide architectures under tailored flow-fields for the fabrication of biocompatible assemblies with defined morphology and optoelectronic function.

  7. Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide

    PubMed Central

    Li, Hong; Contryman, Alex W.; Qian, Xiaofeng; Ardakani, Sina Moeini; Gong, Yongji; Wang, Xingli; Weisse, Jeffery M.; Lee, Chi Hwan; Zhao, Jiheng; Ajayan, Pulickel M.; Li, Ju; Manoharan, Hari C.; Zheng, Xiaolin

    2015-01-01

    The isolation of the two-dimensional semiconductor molybdenum disulphide introduced a new optically active material possessing a band gap that can be facilely tuned via elastic strain. As an atomically thin membrane with exceptional strength, monolayer molybdenum disulphide subjected to biaxial strain can embed wide band gap variations overlapping the visible light spectrum, with calculations showing the modified electronic potential emanating from point-induced tensile strain perturbations mimics the Coulomb potential in a mesoscopic atom. Here we realize and confirm this ‘artificial atom' concept via capillary-pressure-induced nanoindentation of monolayer molybdenum disulphide from a tailored nanopattern, and demonstrate that a synthetic superlattice of these building blocks forms an optoelectronic crystal capable of broadband light absorption and efficient funnelling of photogenerated excitons to points of maximum strain at the artificial-atom nuclei. Such two-dimensional semiconductors with spatially textured band gaps represent a new class of materials, which may find applications in next-generation optoelectronics or photovoltaics. PMID:26088550

  8. Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhuang, Q. D.; Alradhi, H.; Jin, Z. M.; Chen, X. R.; Shao, J.; Chen, X.; Sanchez, Ana M.; Cao, Y. C.; Liu, J. Y.; Yates, P.; Durose, K.; Jin, C. J.

    2017-03-01

    InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.

  9. Selection of physiological parameters for optoelectronic system supporting behavioral therapy of autistic children

    NASA Astrophysics Data System (ADS)

    Landowska, A.; Karpienko, K.; Wróbel, M.; Jedrzejewska-Szczerska, M.

    2014-11-01

    In this article the procedure of selection of physiological parameters for optoelectronic system supporting behavioral therapy of autistic children is proposed. Authors designed and conducted an experiment in which a group of 30 health volunteers (16 females and 14 males) were examined. Under controlled conditions people were exposed to a stressful situation caused by the picture or sound (1kHz constant sound, which was gradually silenced and finished with a shot sound). For each of volunteers, a set of physiological parameters were recorded, including: skin conductance, heart rate, peripheral temperature, respiration rate and electromyography. The selected characteristics were measured in different locations in order to choose the most suitable one for the designed therapy supporting system. The bio-statistical analysis allowed us to discern the proper physiological parameters that are most associated to changes due to emotional state of a patient, such as: skin conductance, temperatures and respiration rate. This allowed us to design optoelectronic sensors network for supporting behavioral therapy of children with autism.

  10. A Flexible and Thin Graphene/Silver Nanowires/Polymer Hybrid Transparent Electrode for Optoelectronic Devices.

    PubMed

    Dong, Hua; Wu, Zhaoxin; Jiang, Yaqiu; Liu, Weihua; Li, Xin; Jiao, Bo; Abbas, Waseem; Hou, Xun

    2016-11-16

    A typical thin and fully flexible hybrid electrode was developed by integrating the encapsulation of silver nanowires (AgNWs) network between a monolayer graphene and polymer film as a sandwich structure. Compared with the reported flexible electrodes based on PET or PEN substrate, this unique electrode exhibits the superior optoelectronic characteristics (sheet resistance of 8.06 Ω/□ at 88.3% light transmittance). Meanwhile, the specific up-to-bottom fabrication process could achieve the superflat surface (RMS = 2.58 nm), superthin thickness (∼8 μm thickness), high mechanical robustness, and lightweight. In addition, the strong corrosion resistance and stability for the hybrid electrode were proved. With these advantages, we employ this electrode to fabricate the simple flexible organic light-emitting device (OLED) and perovskite solar cell device (PSC), which exhibit the considerable performance (best PCE of OLED = 2.11 cd/A(2); best PCE of PSC = 10.419%). All the characteristics of the unique hybrid electrode demonstrate its potential as a high-performance transparent electrode candidate for flexible optoelectronics.

  11. Optoelectronic parallel-matching architecture: architecture description, performance estimation, and prototype demonstration.

    PubMed

    Kagawa, K; Nitta, K; Ogura, Y; Tanida, J; Ichioka, Y

    2001-01-10

    We propose an optoelectronic parallel-matching architecture (PMA) that provides powerful processing capabilities in global processing compared with conventional parallel-computing architectures. The PMA is composed of a global processor called a parallel-matching (PM) module and multiple processing elements (PE's). The PM module is implemented by a large-fan-out free-space optical interconnection and a PM smart-pixel array (PM-SPA). In the proposed architecture, by means of the PM module each PE can monitor the other PE's by use of several kinds of global data matching as well as interprocessor communication. Theoretical evaluation of the performance shows that the proposed PMA provides tremendous improvement in global processing. A prototype demonstrator of the PM module is constructed on the basis of state-of-the-art optoelectronic devices and a diffractive optical element. The prototype is assumed for use in a multiple-processor system composed of 4 x 4 PE's that are completely connected through bit-serial optical communication channels. The PM-SPA is emulated by a complex programmable device and a complementary metal-oxide semiconductor photodetector array. On the prototype demonstrator the fundamental operations of the PM module were verified at 15 MHz.

  12. A novel optoelectronic serial-to-parallel converter for 25-Gbps burst-mode optical packets.

    PubMed

    Ibrahim, Salah; Ishikawa, Hiroshi; Nakahara, Tatsushi; Takahashi, Ryo

    2014-01-13

    A new optoelectronic serial-to-parallel converter (SPC) has been developed to interface 25-Gbps asynchronous optical packets to CMOS circuitry. Other than all previous optoelectronic SPCs that are limited to single-shot operation and hence that can only be used for packet label processing, the SPC presented here can operate repeatedly with a period of as low as 640 ps to perform 1:16 conversion for an entire burst-mode 25-Gbps optical packet. The new SPC adopts a shared-trigger configuration and hence a single device can either convert a single packet or dual packets simultaneously. In this paper, the design and operation of the new SPC is explained after reviewing the fundamentals of performing bit-by-bit serial-to-parallel conversion by using HEMT-arrays and MSM-PDs. The response of the fabricated SPC device is presented and explained, together with the experimental work done to demonstrate 1:16 dual packet conversion at 25 Gbps.

  13. Temperature-Induced Lattice Relaxation of Perovskite Crystal Enhances Optoelectronic Properties and Solar Cell Performance.

    PubMed

    Murali, Banavoth; Yengel, Emre; Peng, Wei; Chen, Zhijie; Alias, Mohd S; Alarousu, Erkki; Ooi, Boon S; Burlakov, Victor; Goriely, Alain; Eddaoudi, Mohamed; Bakr, Osman M; Mohammed, Omar F

    2017-01-05

    Hybrid organic-inorganic perovskite crystals have recently become one of the most important classes of photoactive materials in the solar cell and optoelectronic communities. Albeit improvements have focused on state-of-the-art technology including various fabrication methods, device architectures, and surface passivation, progress is yet to be made in understanding the actual operational temperature on the electronic properties and the device performances. Therefore, the substantial effect of temperature on the optoelectronic properties, charge separation, charge recombination dynamics, and photoconversion efficiency are explored. The results clearly demonstrated a significant enhancement in the carrier mobility, photocurrent, charge carrier lifetime, and solar cell performance in the 60 ± 5 °C temperature range. In this temperature range, perovskite crystal exhibits a highly symmetrical relaxed cubic structure with well-aligned domains that are perpendicular to a principal axis, thereby remarkably improving the device operation. This finding provides a new key variable component and paves the way toward using perovskite crystals in highly efficient photovoltaic cells.

  14. Identifying airborne metal particles sources near an optoelectronic and semiconductor industrial park

    NASA Astrophysics Data System (ADS)

    Chen, Ho-Wen; Chen, Wei-Yea; Chang, Cheng-Nan; Chuang, Yen-Hsun; Lin, Yu-Hao

    2016-06-01

    The recently developed Central Taiwan Science Park (CTSP) in central Taiwan is home to an optoelectronic and semiconductor industrial cluster. Therefore, exploring the elemental compositions and size distributions of airborne particles emitted from the CTSP would help to prevent pollution. This study analyzed size-fractionated metal-rich particle samples collected in upwind and downwind areas of CTSP during Jan. and Oct. 2013 by using micro-orifice uniform deposited impactor (MOUDI). Correlation analysis, hierarchical cluster analysis and particle mass-size distribution analysis are performed to identify the source of metal-rich particle near the CTSP. Analyses of elemental compositions and particle size distributions emitted from the CTSP revealed that the CTSP emits some metals (V, As, In Ga, Cd and Cu) in the ultrafine particles (< 1 μm). The statistical analysis combines with the particle mass-size distribution analysis could provide useful source identification information. In airborne particles with the size of 0.32 μm, Ga could be a useful pollution index for optoelectronic and semiconductor emission in the CTSP. Meanwhile, the ratios of As/Ga concentration at the particle size of 0.32 μm demonstrates that humans near the CTSP would be potentially exposed to GaAs ultrafine particles. That is, metals such as Ga and As and other metals that are not regulated in Taiwan are potentially harmful to human health.

  15. Light Manipulation for Organic Optoelectronics Using Bio-inspired Moth's Eye Nanostructures

    PubMed Central

    Zhou, Lei; Ou, Qing-Dong; Chen, Jing-De; Shen, Su; Tang, Jian-Xin; Li, Yan-Qing; Lee, Shuit-Tong

    2014-01-01

    Organic-based optoelectronic devices, including light-emitting diodes (OLEDs) and solar cells (OSCs) hold great promise as low-cost and large-area electro-optical devices and renewable energy sources. However, further improvement in efficiency remains a daunting challenge due to limited light extraction or absorption in conventional device architectures. Here we report a universal method of optical manipulation of light by integrating a dual-side bio-inspired moth's eye nanostructure with broadband anti-reflective and quasi-omnidirectional properties. Light out-coupling efficiency of OLEDs with stacked triple emission units is over 2 times that of a conventional device, resulting in drastic increase in external quantum efficiency and current efficiency to 119.7% and 366 cd A−1 without introducing spectral distortion and directionality. Similarly, the light in-coupling efficiency of OSCs is increased 20%, yielding an enhanced power conversion efficiency of 9.33%. We anticipate this method would offer a convenient and scalable way for inexpensive and high-efficiency organic optoelectronic designs. PMID:24509524

  16. Light Manipulation for Organic Optoelectronics Using Bio-inspired Moth's Eye Nanostructures

    NASA Astrophysics Data System (ADS)

    Zhou, Lei; Ou, Qing-Dong; Chen, Jing-De; Shen, Su; Tang, Jian-Xin; Li, Yan-Qing; Lee, Shuit-Tong

    2014-02-01

    Organic-based optoelectronic devices, including light-emitting diodes (OLEDs) and solar cells (OSCs) hold great promise as low-cost and large-area electro-optical devices and renewable energy sources. However, further improvement in efficiency remains a daunting challenge due to limited light extraction or absorption in conventional device architectures. Here we report a universal method of optical manipulation of light by integrating a dual-side bio-inspired moth's eye nanostructure with broadband anti-reflective and quasi-omnidirectional properties. Light out-coupling efficiency of OLEDs with stacked triple emission units is over 2 times that of a conventional device, resulting in drastic increase in external quantum efficiency and current efficiency to 119.7% and 366 cd A-1 without introducing spectral distortion and directionality. Similarly, the light in-coupling efficiency of OSCs is increased 20%, yielding an enhanced power conversion efficiency of 9.33%. We anticipate this method would offer a convenient and scalable way for inexpensive and high-efficiency organic optoelectronic designs.

  17. Rare earth doped III-nitride semiconductors for spintronic and optoelectronic applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Palai, Ratnakar

    2016-10-01

    Since last four decades the information and communication technologies are relying on the semiconductor materials. Currently a great deal of attention is being focused on adding spin degree-of-freedom into semiconductor to create a new area of solid-state electronics, called spintronics. In spintronics not only the current but also its spin state is controlled. Such materials need to be good semiconductors for easy integration in typical integrated circuits with high sensitivity to the spin orientation, especially room temperature ferromagnetism being an important desirable property. GaN is considered to be the most important semiconductor after silicon. It is widely used for the production of green, blue, UV, and white LEDs in full color displays, traffic lights, automotive lightings, and general room lighting using white LEDs. GaN-based systems also show promise for microwave and high power electronics intended for radar, satellite, wireless base stations and spintronic applications. Rare earth (Yb, Eu, Er, and Tm) doped GaN shows many interesting optoelectronic and magnetoptic properties e. g. sharp emission from UV through visible to IR, radiation hardness, and ferromagnetism. The talk will be focused on fabrication, optoelectronic (photoluminescence, cathodeluminescence, magnetic, and x-ray photoelectron spectroscopy) properties of some rare earth doped GaN and InGaN semiconductor nanostructures grown by plasma assisted molecular beam epitaxy (MBE) and future applications.

  18. Silicon-on-insulator-based complementary metal oxide semiconductor integrated optoelectronic platform for biomedical applications

    NASA Astrophysics Data System (ADS)

    Mujeeb-U-Rahman, Muhammad; Scherer, Axel

    2016-12-01

    Microscale optical devices enabled by wireless power harvesting and telemetry facilitate manipulation and testing of localized biological environments (e.g., neural recording and stimulation, targeted delivery to cancer cells). Design of integrated microsystems utilizing optical power harvesting and telemetry will enable complex in vivo applications like actuating a single nerve, without the difficult requirement of extreme optical focusing or use of nanoparticles. Silicon-on-insulator (SOI)-based platforms provide a very powerful architecture for such miniaturized platforms as these can be used to fabricate both optoelectronic and microelectronic devices on the same substrate. Near-infrared biomedical optics can be effectively utilized for optical power harvesting to generate optimal results compared with other methods (e.g., RF and acoustic) at submillimeter size scales intended for such designs. We present design and integration techniques of optical power harvesting structures with complementary metal oxide semiconductor platforms using SOI technologies along with monolithically integrated electronics. Such platforms can become the basis of optoelectronic biomedical systems including implants and lab-on-chip systems.

  19. Strain-engineered optoelectronic properties of 2D transition metal dichalcogenide lateral heterostructures

    DOE PAGES

    Lee, Jaekwang; Huang, Jingsong; Sumpter, Bobby G.; ...

    2017-02-17

    Compared with their bulk counterparts, 2D materials can sustain much higher elastic strain at which optical quantities such as bandgaps and absorption spectra governing optoelectronic device performance can be modified with relative ease. Using first-principles density functional theory and quasiparticle GW calculations, we demonstrate how uniaxial tensile strain can be utilized to optimize the electronic and optical properties of transition metal dichalcogenide lateral (in-plane) heterostructures such as MoX2/WX2 (X = S, Se, Te). We find that these lateral-type heterostructures may facilitate efficient electron–hole separation for light detection/harvesting and preserve their type II characteristic up to 12% of uniaxial strain. Basedmore » on the strain-dependent bandgap and band offset, we show that uniaxial tensile strain can significantly increase the power conversion efficiency of these lateral heterostructures. Our results suggest that these strain-engineered lateral heterostructures are promising for optimizing optoelectronic device performance by selectively tuning the energetics of the bandgap.« less

  20. Computer-aided laser-optoelectronic OPTEL 3D measurement systems of complex-shaped object geometry

    NASA Astrophysics Data System (ADS)

    Galiulin, Ravil M.; Galiulin, Rishat M.; Bakirov, J. M.; Bogdanov, D. R.; Shulupin, C. O.; Khamitov, D. H.; Khabibullin, M. G.; Pavlov, A. F.; Ryabov, M. S.; Yamaliev, K. N.

    1996-03-01

    Technical characteristics, advantages and applications of automated optoelectronic measuring systems designed at the Regional Interuniversity Optoelectronic Systems Laboratory ('OPTEL') of Ufa State Aviation Technical University are given. The suggested range of systems is the result of the long-term scientific and research experiments, work on design and introduction work. The system can be applied in industrial development and research, in the field of high precision measurement of geometrical parameters in aerospace, robotic, etc., where non-contact and fast measurements of complicated shape objects made of various materials including brittle and plastic articles are required.

  1. Quantum Optoelectronics Technical Digest, 1993. Volume 8. Postconference Edition. Summaries of Papers Presented at the Quantum Optoelectronics Topical Meeting Held in Palm Springs, California on March 17-19, 1993.

    DTIC Science & Technology

    1993-01-01

    is to give a brief introduction to "fully-quantum optoelectronics," in which electrons confined in low - dimensional semiconductors are assumed to...emitters using cavity quantum electrodynamics in low - dimensional semiconductors , which may be presented in this meeting by Professor Yamanishi and by Dr

  2. Agreement between fiber optic and optoelectronic systems for quantifying sagittal plane spinal curvature in sitting.

    PubMed

    Cloud, Beth A; Zhao, Kristin D; Breighner, Ryan; Giambini, Hugo; An, Kai-Nan

    2014-07-01

    Spinal posture affects how individuals function from a manual wheelchair. There is a need to directly quantify spinal posture in this population to ultimately improve function. A fiber optic system, comprised of an attached series of sensors, is promising for measuring large regions of the spine in individuals sitting in a wheelchair. The purpose of this study was to determine the agreement between fiber optic and optoelectronic systems for measuring spinal curvature, and describe the range of sagittal plane spinal curvatures in natural sitting. Able-bodied adults (n = 26, 13 male) participated. Each participant assumed three sitting postures: natural, slouched (accentuated kyphosis), and extension (accentuated lordosis) sitting. Fiber optic (ShapeTape) and optoelectronic (Optotrak) systems were applied to the skin over spinous processes from S1 to C7 and used to measure sagittal plane spinal curvature. Regions of kyphosis and lordosis were identified. A Cobb angle-like method was used to quantify lordosis and kyphosis. Generalized linear model and Bland-Altman analyses were used to assess agreement. A strong correlation exists between curvature values obtained with Optotrak and ShapeTape (R(2) = 0.98). The mean difference between Optotrak and ShapeTape for kyphosis in natural, extension, and slouched postures was 4.30° (95% LOA: -3.43 to 12.04°), 3.64° (95% LOA: -1.07 to 8.36°), and 4.02° (95% LOA: -2.80 to 10.84°), respectively. The mean difference for lordosis, when present, in natural and extension postures was 2.86° (95% LOA: -1.18 to 6.90°) and 2.55° (95% LOA: -3.38 to 8.48°), respectively. In natural sitting, the mean ± SD of kyphosis values was 35.07 ± 6.75°. Lordosis was detected in 8/26 participants: 11.72 ± 7.32°. The fiber optic and optoelectronic systems demonstrate acceptable agreement for measuring sagittal plane thoracolumbar spinal curvature.

  3. Nanostructure and optoelectronic phenomena in germanium-transparent conductive oxide (Ge:TCO) composites

    NASA Astrophysics Data System (ADS)

    Shih, Grace Hwei-Pyng

    Nanostructured composites are attracting intense interest for electronic and optoelectronic device applications, specifically as active elements in thin film photovoltaic (PV) device architectures. These systems implement fundamentally different concepts of enhancing energy conversion efficiencies compared to those seen in current commercial devices. This is possible through considerable flexibility in the manipulation of device-relevant properties through control of the interplay between the nanostructure and the optoelectronic response. In the present work, inorganic nanocomposites of semiconductor Ge embedded in transparent conductive indium tin oxide (ITO) as well as Ge in zinc oxide (ZnO) were produced by a single step RF-magnetron sputter deposition process. It is shown that, by controlling the design of the nanocomposites as well as heat treatment conditions, decreases in the physical dimensions of Ge nanophase size provided an effective tuning of the optical absorption and charge transport properties. This effect of changes in the optical properties of nanophase semiconductors with respect to size is known as the quantum confinement effect. Variation in the embedding matrix material between ITO and ZnO with corresponding characterization of optoelectronic properties exhibit notable differences in the presence and evolution of an interfacial oxide within these composites. Further studies of interfacial structures were performed using depth-profiling XPS and Raman spectroscopy, while study of the corresponding electronic effects were performed using room temperature and temperature-dependent Hall Effect. Optical absorption was noted to shift to higher onset energies upon heat treatment with a decrease in the observed Ge domain size, indicating quantum confinement effects within these systems. This contrasts to previous investigations that have involved the introduction of nanoscale Ge into insulating, amorphous oxides. Comparison of these different matrix

  4. Design of optoelectronic imaging system with high resolution and large field-of-view based on dual CMOS

    NASA Astrophysics Data System (ADS)

    Cheng, Hanglin; Hao, Qun; Hu, Yao; Cao, Jie; Wang, Shaopu; Li, Lin

    2016-10-01

    With the advantages of high resolution, large field of view and compacted size, optoelectronic imaging sensors are widely used in many fields, such as robot's navigation, industrial measurement and remote sensing. Many researchers pay more attention to improve the comprehensive performances of imaging sensors, including large field of view (FOV), high resolution, compact size and high imaging efficiency, etc. One challenge is the tradeoff between high resolution and large field of view simultaneously considering compacted size. In this paper, we propose an optoelectronic imaging system combining the lenses of short focal length and long focal length based on dual CMOS to simulate the characters of human eyes which observe object within large FOV in high resolution. We design and optimize the two lens, the lens of short focal length is used to search object in a wide field and the long one is responsible for high resolution imaging of the target area. Based on a micro-CMOS imaging sensor with low voltage differential transmission technology-MIPI (Mobile Industry Processor Interface), we design the corresponding circuits to realize collecting optical information with high speed. The advantage of the interface is to help decreasing power consumption, improving transmission efficiency and achieving compacted size of imaging sensor. Meanwhile, we carried out simulations and experiments to testify the optoelectronic imaging system. The results show that the proposed method is helpful to improve the comprehensive performances of optoelectronic imaging sensors.

  5. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

    SciTech Connect

    Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; Hozumi, Hideaki; Gao, Yongqian; Eda, Goki; Mattevi, Cecilia; Fujita, Takeshi; Yoshigoe, Akitaka; Ishizuka, Shinji; Adamska, Lyudmyla; Yamada, Takatoshi; Dattelbaum, Andrew M.; Gupta, Gautam; Doorn, Stephen K.; Velizhanin, Kirill A.; Teraoka, Yuden; Chen, Mingwei; Htoon, Han; Chhowalla, Manish; Mohite, Aditya D.; Takakuwa, Yuji

    2016-09-01

    We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.

  6. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

    DOE PAGES

    Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; ...

    2016-09-01

    We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a setmore » of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.« less

  7. Multi-Axis Force/Torque Sensor Based on Simply-Supported Beam and Optoelectronics

    PubMed Central

    Noh, Yohan; Bimbo, Joao; Sareh, Sina; Wurdemann, Helge; Fraś, Jan; Chathuranga, Damith Suresh; Liu, Hongbin; Housden, James; Althoefer, Kaspar; Rhode, Kawal

    2016-01-01

    This paper presents a multi-axis force/torque sensor based on simply-supported beam and optoelectronic technology. The sensor’s main advantages are: (1) Low power consumption; (2) low-level noise in comparison with conventional methods of force sensing (e.g., using strain gauges); (3) the ability to be embedded into different mechanical structures; (4) miniaturisation; (5) simple manufacture and customisation to fit a wide-range of robot systems; and (6) low-cost fabrication and assembly of sensor structure. For these reasons, the proposed multi-axis force/torque sensor can be used in a wide range of application areas including medical robotics, manufacturing, and areas involving human–robot interaction. This paper shows the application of our concept of a force/torque sensor to flexible continuum manipulators: A cylindrical MIS (Minimally Invasive Surgery) robot, and includes its design, fabrication, and evaluation tests. PMID:27869689

  8. The method of testing of the attitude reference systems with optoelectronic sensors

    NASA Astrophysics Data System (ADS)

    Szelmanowski, Andrzej; Michalak, Slawomir

    2003-09-01

    What the paper deals with is the method of testing of the attitude reference systems with the coning excitation/motion applied. A theoretical description of the excitation at issue has been given and followed with a comparative analysis of the excitation generated in the UPG-48 station with a tilting platform. Experimental data of testing of the attitude and heading reference system AHRS LCR-92 system for the non-holonomical excitation/motion have been compared with results effected by some simulation-based tests of numerical models of the attitude and heading reference systems with the optoelectronic sensors. On the grounds of some numerical-simulation-effected findings gained with the AutoCAD packet, a concept of a coning-excitation-generating measuring station has been developed at the Air Force Institute of Technology and presented in this paper.

  9. Performance of an optoelectronic neural network in the presence of noise

    NASA Astrophysics Data System (ADS)

    Webb, Roderick P.

    1995-08-01

    Optoelectronic neural networks must not only be highly parallel but also fast to compete with electrical systems. Receiver noise becomes an important consideration at high data rates; so the limits set by noise to network size and speed are analyzed. A network incorporating an array of high-speed multi-quantum-well modulators was constructed. It employed a general method for optical representation of bipolar values, which required only a minimal increase in network dimensions and gave the network immunity to common-mode parameter variations. Different ways of partitioning pattern-recognition problems were compared, and the accuracy of one configuration was tested with the experimental network over a range of noise levels.

  10. Optoelectronic optimization of mode selective converter based on liquid crystal on silicon

    NASA Astrophysics Data System (ADS)

    Wang, Yongjiao; Liang, Lei; Yu, Dawei; Fu, Songnian

    2016-03-01

    We carry out comprehensive optoelectronic optimization of mode selective converter used for the mode division multiplexing, based on liquid crystal on silicon (LCOS) in binary mode. The conversion error of digital-to-analog (DAC) is investigated quantitatively for the purpose of driving the LCOS in the application of mode selective conversion. Results indicate the DAC must have a resolution of 8-bit, in order to achieve high mode extinction ratio (MER) of 28 dB. On the other hand, both the fast axis position error of half-wave-plate (HWP) and rotation angle error of Faraday rotator (FR) have negative influence on the performance of mode selective conversion. However, the commercial products provide enough angle error tolerance for the LCOS-based mode selective converter, taking both of insertion loss (IL) and MER into account.

  11. Linking computational and experimental studies of III-V quantum dots for optoelectronics and photovoltaics

    NASA Astrophysics Data System (ADS)

    Semichaevsky, A. V.; Goldman, R. S.; Johnson, H. T.

    2011-09-01

    Low-dimensional semiconductors (LDS) are semiconductor structures such as quantum dots, quantum wires, and quantum wells in which electron and hole wave functions are confined due to heterogeneous composition and often strongly affected by mismatch strain. Due to the quantum confinement, LDS exhibit unusual electronic and optical properties not found in bulk semiconductor materials. Quantum dots (QD) have found new applications in various semiconductor devices such as lasers, photodetectors, and solar cells. Precise design of QD structures requires understanding of their chemical composition and nanomechanical properties, and relies on both experimental and computational approaches. In this paper we provide an overview of computational and experimental methods for characterization of QD heterostructures. In particular, we review our own concerted efforts to bring together computation and experiment in order to better explain their optoelectronic and photovoltaic properties.

  12. Synthesis of Continuous Conductive PEDOT:PSS Nanofibers by Electrospinning: A Conformal Coating for Optoelectronics.

    PubMed

    Bessaire, Bastien; Mathieu, Maillard; Salles, Vincent; Yeghoyan, Taguhi; Celle, Caroline; Simonato, Jean-Pierre; Brioude, Arnaud

    2017-01-11

    A process to synthesize continuous conducting nanofibers were developed using PEDOT:PSS as a conducting polymer and an electrospinning method. Experimental parameters were carefully explored to achieve reproducible conductive nanofibers synthesis in large quantities. In particular, relative humidity during the electrospinning process was proven to be of critical importance, as well as doping post-treatment involving glycols and alcohols. The synthesized fibers were assembled as a mat on glass substrates, forming a conductive and transparent electrode and their optoelectronic have been fully characterized. This method produces a conformable conductive and transparent coating that is well-adapted to nonplanar surfaces, having very large aspect ratio features. A demonstration of this property was made using surfaces having deep trenches and high steps, where conventional transparent conductive materials fail because of a lack of conformability.

  13. High frequency optoelectronic oscillators based on the optical feedback of semiconductor mode-locked laser diodes.

    PubMed

    Haji, Mohsin; Hou, Lianping; Kelly, Anthony E; Akbar, Jehan; Marsh, John H; Arnold, John M; Ironside, Charles N

    2012-01-30

    Optical self seeding feedback techniques can be used to improve the noise characteristics of passively mode-locked laser diodes. External cavities such as fiber optic cables can increase the memory of the phase and subsequently improve the timing jitter. In this work, an improved optical feedback architecture is proposed using an optical fiber loop delay as a cavity extension of the mode-locked laser. We investigate the effect of the noise reduction as a function of the loop length and feedback power. The well known composite cavity technique is also implemented for suppressing supermode noise artifacts presented due to harmonic mode locking effects. Using this method, we achieve a record low radio frequency linewidth of 192 Hz for any high frequency (>1 GHz) passively mode-locked laser to date (to the best of the authors' knowledge), making it promising for the development of high frequency optoelectronic oscillators.

  14. Effects of Iodine Doping on Optoelectronic and Chemical Properties of Polyterpenol Thin Films

    PubMed Central

    Bazaka, Kateryna; Jacob, Mohan V.

    2017-01-01

    Owing to their amorphous, highly cross-liked nature, most plasma polymers display dielectric properties. This study investigates iodine doping as the means to tune optoelectronic properties of plasma polymer derived from a low-cost, renewable resource, i.e., Melaleuca alternifolia oil. In situ exposure of polyterpenol to vapors of electron-accepting dopant reduced the optical band gap to 1.5 eV and increased the conductivity from 5.05 × 10−8 S/cm to 1.20 × 10−6 S/cm. The increased conductivity may, in part, be attributed to the formation of charge-transfer complexes between the polymer chain and halogen, which act as a cation and anion, respectively. Higher levels of doping notably increased the refractive index, from 1.54 to 1.70 (at 500 nm), and significantly reduced the transparency of films. PMID:28336848

  15. Crystallographic and optoelectronic properties of the novel thin film absorber Cu2GeS3

    NASA Astrophysics Data System (ADS)

    Robert, E. V. C.; de Wild, J.; Colombara, D.; Dale, P. J.

    2016-09-01

    Thin films of Cu2GeS3 are grown by annealing copper layers in GeS and S gaseous atmosphere above 460°C. Below 500°C the cubic polymorph is formed, having inferior optoelectronic properties compared to the monoclinic phase, formed at higher temperature. The bandgap of the cubic phase lies below that of the monoclinic phase: they are determined from absorption measurements to be 1.23 and 1.55 eV respectively. Photoluminescence measurements are performed and only the monoclinic Cu2GeS3 shows a photoluminescence signal with a peak maximum at 1.57 eV. We attribute this difference between cubic and monoclinic to the higher quasi fermi level splitting of the monoclinic phase. Wavelength dependent photoelectrochemical measurements demonstrate the Cu2GeS3 to be p-type with an apparent quantum efficiency of less than 3 % above the band gap.

  16. Stacking nature and band gap opening of graphene: Perspective for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Ullah, Naeem; Zhang, R. Q.; Murtaza, G.; Yar, Abdullah; Mahmood, Asif

    2016-11-01

    Using first principles density functional theory calculations, we have performed geometrical and electronic structure calculations of two-dimensional graphene(G) sheet on the hexagonal boron nitride (h-BN) with different stacking orders. We found that AB stacking appears as the ground state while AA-stacking is a local minima. Band gap opening in the hybrid G/h-BN is sensitive to the interlayer distance and stacking arrangement. Charge redistribution in the graphene sheet determined the band gap opening where the onsite energy difference between carbon lattice atoms of G-sheet takes place. Similar behavior can be observed for the proposed h-BN/G/h-BN tri-layer system. Stacking resolved calculations of the absorptive part of complex dielectric function and optical conductivity revealed the importance of the proposed hybrid systems in the optoelectronics.

  17. Multi-Axis Force/Torque Sensor Based on Simply-Supported Beam and Optoelectronics.

    PubMed

    Noh, Yohan; Bimbo, Joao; Sareh, Sina; Wurdemann, Helge; Fraś, Jan; Chathuranga, Damith Suresh; Liu, Hongbin; Housden, James; Althoefer, Kaspar; Rhode, Kawal

    2016-11-17

    This paper presents a multi-axis force/torque sensor based on simply-supported beam and optoelectronic technology. The sensor's main advantages are: (1) Low power consumption; (2) low-level noise in comparison with conventional methods of force sensing (e.g., using strain gauges); (3) the ability to be embedded into different mechanical structures; (4) miniaturisation; (5) simple manufacture and customisation to fit a wide-range of robot systems; and (6) low-cost fabrication and assembly of sensor structure. For these reasons, the proposed multi-axis force/torque sensor can be used in a wide range of application areas including medical robotics, manufacturing, and areas involving human-robot interaction. This paper shows the application of our concept of a force/torque sensor to flexible continuum manipulators: A cylindrical MIS (Minimally Invasive Surgery) robot, and includes its design, fabrication, and evaluation tests.

  18. p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties

    SciTech Connect

    Wang, Ming-Zheng; Xie, Wei-Jie; Hu, Han; Yu, Yong-Qiang; Wu, Chun-Yan; Wang, Li; Luo, Lin-Bao

    2013-11-18

    Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm{sup 2}V{sup −1}s{sup −1} and a hole concentration of 1.67 × 10{sup 17} cm{sup −3}, respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application.

  19. Hexa-peri-hexabenzocoronene with Different Acceptor Units for Tuning Optoelectronic Properties.

    PubMed

    Keerthi, Ashok; Hou, Ian Cheng-Yi; Marszalek, Tomasz; Pisula, Wojciech; Baumgarten, Martin; Narita, Akimitsu

    2016-10-06

    Hexa-peri-hexabenzocoronene (HBC)-based donor-acceptor dyads were synthesized with three different acceptor units, through two pathways: 1) "pre-functionalization" of monobromo-substituted hexaphenylbenzene prior to the cyclodehydrogenation; and 2) "post-functionalization" of monobromo-substituted HBC after the cyclodehydrogenation. The HBC-acceptor dyads demonstrated varying degrees of intramolecular charge-transfer interactions, depending on the attached acceptor units, which allowed tuning of their photophysical and optoelectronic properties, including the energy gaps. The two synthetic pathways described here can be complementary and potentially be applied for the synthesis of nanographene-acceptor dyads with larger aromatic cores, including one-dimensionally extended graphene nanoribbons.

  20. Novel optoelectronic devices; Proceedings of the Meeting, The Hague, Netherlands, Mar. 31-Apr. 2, 1987

    NASA Technical Reports Server (NTRS)

    Adams, Michael J. (Editor)

    1987-01-01

    The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.

  1. Shape engineering for electronic and optoelectronic properties of Si nanostructure solar cells

    NASA Astrophysics Data System (ADS)

    He, Yan; Zhao, Yipeng; Quan, Jun; Ouyang, Gang

    2016-10-01

    An analytical model is developed to explore the shape-dependent electronic and optoelectronic properties of silicon nanostructure solar cells, including nanocones (NCs), nanowires (NWs), and truncated-nanocones (TNCs), on the basis of atomic-bond-relaxation consideration and detailed balance principle. It is found that the inhomogeneous NCs can not only make the band gap shrink gradually from the top to the bottom, but also suppress the surface recombination and enhance light absorption. Moreover, the optimal performance of silicon nanostructures can be achieved through modulating the geometrical parameters. Strikingly, the SiNCs show the highest solar conversion efficiency compared with that of NWs and TNCs under identical conditions, which suggest that this kind of nanostructures could be expected to be applicable for the new-typed and friendly alternative solar cell unit.

  2. Predicting the optoelectronic properties of nanowire films based on control of length polydispersity

    PubMed Central

    Large, Matthew J.; Burn, Jake; King, Alice A.; Ogilvie, Sean P.; Jurewicz, Izabela; Dalton, Alan B.

    2016-01-01

    We demonstrate that the optoelectronic properties of percolating thin films of silver nanowires (AgNWs) are predominantly dependent upon the length distribution of the constituent AgNWs. A generalized expression is derived to describe the dependence of both sheet resistance and optical transmission on this distribution. We experimentally validate the relationship using ultrasonication to controllably vary the length distribution. These results have major implications where nanowire-based films are a desirable material for transparent conductor applications; in particular when application-specific performance criteria must be met. It is of particular interest to have a simple method to generalize the properties of bulk films from an understanding of the base material, as this will speed up the optimisation process. It is anticipated that these results may aid in the adoption of nanowire films in industry, for applications such as touch sensors or photovoltaic electrode structures. PMID:27158132

  3. Ba{sub 2}TeO as an optoelectronic material: First-principles study

    SciTech Connect

    Sun, Jifeng; Shi, Hongliang; Du, Mao-Hua; Singh, David J.; Siegrist, Theo

    2015-05-21

    The band structure, optical, and defects properties of Ba{sub 2}TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or transparent conducting material. Ba{sub 2}TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical bandgap [Besara et al., J. Solid State Chem. 222, 60 (2015)]. We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba{sub 2}TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of the donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.

  4. Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus.

    PubMed

    Whitney, William S; Sherrott, Michelle C; Jariwala, Deep; Lin, Wei-Hsiang; Bechtel, Hans A; Rossman, George R; Atwater, Harry A

    2017-01-11

    We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. We interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and a quantum confined Franz-Keldysh (QCFK) effect, phenomena that have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.

  5. Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

    NASA Astrophysics Data System (ADS)

    Whitney, William S.; Sherrott, Michelle C.; Jariwala, Deep; Lin, Wei-Hsiang; Bechtel, Hans A.; Rossman, George R.; Atwater, Harry A.

    2017-01-01

    We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. We interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and a quantum confined Franz-Keldysh (QCFK) effect, phenomena which have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.

  6. Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

    PubMed

    Oh, Soong Ju; Berry, Nathaniel E; Choi, Ji-Hyuk; Gaulding, E Ashley; Paik, Taejong; Hong, Sung-Hoon; Murray, Christopher B; Kagan, Cherie R

    2013-03-26

    We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency.

  7. Reducing the noise floor in optoelectronic oscillator by optimizing the operation of modulator

    NASA Astrophysics Data System (ADS)

    Tong, Guochuan; Jin, Tao; Chi, Hao; Zheng, Junchao; Zhu, Xiang; Lai, Tianhao; Wu, Xidong; Shi, Zhiguo

    2016-10-01

    An intensity modulator is a key component in an optoelectronic oscillator (OEO). It is necessary to investigate the effects of some of the operating parameters of the modulator on OEO phase noise. Since the OEO optimized oscillation power is related to the nonlinear effect of the modulator, an extended analysis is made by considering both the saturation effects of the modulator and the radio frequency amplifier. Experimental results show that a 5-dB improvement of phase noise performance is achieved. In addition, a theoretical and experimental study on the DC bias-drifting problem of the modulator and its induced phase noise fluctuations is proposed. It is found that the saturated operation of the amplifier is helpful in reducing the fluctuation range. The presented results can be used to guide the design of high-quality OEOs.

  8. Study on low-phase-noise optoelectronic oscillator and high-sensitivity phase noise measurement system.

    PubMed

    Hong, Jun; Liu, An-min; Guo, Jian

    2013-08-01

    An analytic model for an injection-locked dual-loop optoelectronic oscillator (OEO) is proposed and verified by experiments in this paper. Based on this theoretical model, the effect of injection power on the single-sideband phase noise of the OEO is analyzed, and results suggest that moderate injection is one key factor for a balance between phase noise and spur for OEO. In order to measure superlow phase noise of OEOs, a cross-correlation measurement system based on the fiber delay line is built, in which high linear photodetector and low-phase-noise amplifier are used to improve systematic sensitivity. The cross-correlation measurement system is validated by experiments, and its noise floor for the X band is about -130 dBc/Hz at 1 kHz and -168 dBc/Hz at 10 kHz after a cross correlation of 200 times.

  9. Optical and morphological characteristics of organic thin films for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Zhong, Zhiyou; Sun, Fenglou

    2007-12-01

    Organic semiconductor thin films of tri-(8-hydroxyquinoline)-aluminum (Alq), 9,10-di-(2-naphthyl)-anthracene (ADN), and N,N'bis(naphthalen-1-yl)-N,N'bis(phenyl)-benzidine (NPB) for optoelectronic devices were deposited onto glass substrates by vacuum sublimation technique. The surface morphology and roughness of the thin film were characterized by means of atomic force microscopy (AFM). Experimental results indicate that all thin films present similar granular topography but different surface roughness. In addition, the optical transmittance spectra of thin films were measured by a double beam spectrophotometer and their corresponding optical properties were investigated. The complex refractive index and the optical band gap of thin films were obtained, respectively. Meanwhile, the dispersion behavior of the refractive index was studied in terms of Wemple-DiDomenico single oscillator model, and the oscillator parameters were achieved.

  10. Nanocellulose-based Translucent Diffuser for Optoelectronic Device Applications with Dramatic Improvement of Light Coupling.

    PubMed

    Wu, Wei; Tassi, Nancy G; Zhu, Hongli; Fang, Zhiqiang; Hu, Liangbing

    2015-12-09

    Nanocellulose is a biogenerated and biorenewable organic material. Using a process based on 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO)/NaClO/NaBr system, a highly translucent and light-diffusive film consisting of many layers of nanocellulose fibers and wood pulp microfibers was made. The film demonstrates a combination of large optical transmittance of ∼90% and tunable diffuse transmission of up to ∼78% across the visible and near-infrared spectra. The detailed characterizations of the film indicate the combination of high optical transmittance and haze is due to the film's large packing density and microstructured surface. The superior optical properties make the film a translucent light diffuser and applicable for improving the efficiencies of optoelectronic devices such as thin-film silicon solar cells and organic light-emitting devices.

  11. Optoelectronic instrumentation enhancement using data mining feedback for a 3D measurement system

    NASA Astrophysics Data System (ADS)

    Flores-Fuentes, Wendy; Sergiyenko, Oleg; Gonzalez-Navarro, Félix F.; Rivas-López, Moisés; Hernandez-Balbuena, Daniel; Rodríguez-Quiñonez, Julio C.; Tyrsa, Vera; Lindner, Lars

    2016-12-01

    3D measurement by a cyber-physical system based on optoelectronic scanning instrumentation has been enhanced by outliers and regression data mining feedback. The prototype has applications in (1) industrial manufacturing systems that include: robotic machinery, embedded vision, and motion control, (2) health care systems for measurement scanning, and (3) infrastructure by providing structural health monitoring. This paper presents new research performed in data processing of a 3D measurement vision sensing database. Outliers from multivariate data have been detected and removal to improve artificial intelligence regression algorithm results. Physical measurement error regression data has been used for 3D measurements error correction. Concluding, that the joint of physical phenomena, measurement and computation is an effectiveness action for feedback loops in the control of industrial, medical and civil tasks.

  12. OMVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics (title change from A)

    SciTech Connect

    HAN,JUNG; FIGIEL,JEFFREY J.; PETERSEN,GARY A.; MYERS JR.,SAMUEL M.; CRAWFORD,MARY H.; BANAS,MICHAEL ANTHONY; HEARNE,SEAN JOSEPH

    2000-01-18

    We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GrdnN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

  13. The optoelectronic properties of a photosystem I-carbon nanotube hybrid system

    NASA Astrophysics Data System (ADS)

    Kaniber, Simone M.; Simmel, Friedrich C.; Holleitner, Alexander W.; Carmeli, Itai

    2009-08-01

    The photoconductance properties of photosystem I (PSI) covalently bound to carbon nanotubes (CNTs) are measured. We demonstrate that the PSI forms active electronic junctions with the CNTs, enabling control of the CNTs' photoconductance by the PSI. In order to electrically contact the photoactive proteins, a cysteine mutant is generated at one end of the PSI by genetic engineering. The CNTs are covalently bound to this reactive group using carbodiimide chemistry. We detect an enhanced photoconductance signal of the hybrid material at photon wavelengths resonant to the absorption maxima of the PSI compared to non-resonant wavelengths. The measurements prove that it is feasible to integrate photosynthetic proteins into optoelectronic circuits at the nanoscale.

  14. A new silicon phase with direct band gap and novel optoelectronic properties

    SciTech Connect

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-09-23

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications.

  15. A new silicon phase with direct band gap and novel optoelectronic properties

    DOE PAGES

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; ...

    2015-09-23

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising materialmore » for optoelectronic applications.« less

  16. Estimation of the absolute position of mobile systems by an optoelectronic processor

    NASA Technical Reports Server (NTRS)

    Feng, Liqiang; Fainman, Yeshaiahu; Koren, Yoram

    1992-01-01

    A method that determine the absolute position of a mobile system with a hybrid optoelectronic processor has been developed. Position estimates are based on an analysis of circular landmarks that are detected by a TV camera attached to the mobile system. The difference between the known shape of the landmark and its image provides the information needed to determine the absolute position of the mobile system. For robust operation, the parameters of the landmark image are extracted at high speeds using an optical processor that performs an optical Hough transform. The coordinates of the mobile system are computed from these parameters in a digital co-processor using fast algorithms. Different sources of position estimation errors have also been analyzed, and consequent algorithms to improve the navigation performance of the mobile system have been developed and evaluated by both computer simulation and experiments.

  17. Note: Limitations of the optoelectronic control for carbon nanoparticles synthesis via arc-discharge in solution.

    PubMed

    Darias-González, J G; Hernández-Tabares, L; Carrillo-Barroso, E; Ledo-Pereda, L M; Arteche-Díaz, J; Desdín-García, L F

    2014-03-01

    Submerged electric arc discharge in liquids has shown to be a promising method for synthesizing a wide variety of nanomaterials. However, it requires an accurate current stability control to ensure the desired purity and structure of the products. The discharge stability control through light emission has been previously studied, but still requires further investigation to clarify the influence of some parameters. The present work has studied the solution's transmittance variation over time, the correlation between the arc light emission and the arc current, and the feasibility of controlling the arc current by using a specific wavelength of the arc light spectrum. Several limitations of the optoelectronic control were found at low currents (I < 50 A).

  18. Cooperation and competition in business on example of Internet research of opto-electronic companies

    NASA Astrophysics Data System (ADS)

    Kaliczyńska, Małgorzata

    2006-10-01

    Based on findings from earlier studies which showed that links to academic web sites contain important information, the following study examines the practicability of using co-link data to describe cooperation and competition in optoelec-tronic business. The analysis was based on 32 companies and organizations which were found in an issue of a specialist magazine. For the purpose of the research three search engines - Google, Yahoo! and MSN Search were used. Assuming that a number of co-links to a pair of Web sites is a measure of the similarity between the two companies, the study aims at search for the sets of companies that would be similar to one another. The method applied is the MDS - multidimensional scaling that allows to present results of the analysis on a 2D map.

  19. Enhancing the electrical and optoelectronic performance of nanobelt devices by molecular surface functionalization.

    PubMed

    Lao, Changshi; Li, Yi; Wong, C P; Wang, Z L

    2007-05-01

    By functionalizing the surfaces of ZnO nanobelts (NBs) with a thin self-assembled molecular layer, the electrical and optoelectronic performances of a single NB-based device are drastically improved. For a single NB-based device, due to energy band tuning and surface modification, the conductance was enhanced by 6 orders of magnitude upon functionalization; a coating molecule layer has changed a Schottky contact into an Ohmic contact without sophisticated deposition of multilayered metals. A functionalized NB showed negative differential resistance and exhibited huge improved photoconductivity and gas sensing response. The functionalized molecular layer also greatly reduced the etching rate of the ZnO NBs by buffer solution, largely extending their life time for biomedical applications. Our study demonstrates a new approach for improving the physical properties of oxide NBs and nanowires for device applications.

  20. Microwave assisted synthesis of bithiophene based donor-acceptor-donor oligomers and their optoelectronic performances

    NASA Astrophysics Data System (ADS)

    Bathula, Chinna; Buruga, Kezia; Lee, Sang Kyu; Khazi, Imtiyaz Ahmed M.; Kang, Youngjong

    2017-07-01

    In this article we present the synthesis of two novel bithiophene based symmetrical π conjugated oligomers with donor-acceptor-donor (D-A-D) structures by microwave assisted PdCl2(dppf) catalyzed Suzuki coupling reaction. These molecules contain electron rich bithiophene as a donor, dithienothiadiazole[3,4-c]pyridine and phthalic anhydride units as acceptors. The shorter reaction time, excellent yields and easy product isolation are the advantages of this method. The photophysical prerequisites for electronic application such as strong and broad optical absorption, thermal stability, and compatible energy levels were determined for synthesized oligomers. Optical band gap for the oligomers is found to be 1.72-1.90 eV. The results demonstrated the novel oligomers to be promising candidates in organic optoelectronic applications.

  1. Programmable Optoelectronic Multiprocessors And Their Comparison With Symbolic Substitution For Digital Optical Computing

    NASA Astrophysics Data System (ADS)

    Kiamilev, F.; Esener, Sadik C.; Paturi, R.; Fainmar, Y.; Mercier, P.; Guest, C. C.; Lee, Sing H.

    1989-04-01

    This paper introduces programmable arrays of optically inter-connected electronic processors and compares them with conventional symbolic substitution (SS) systems. The comparison is made on the basis of computational efficiency, speed, size, energy utilization, programmability, and fault tolerance. The small grain size and space-invariant connections of SS lead to poor computational efficiency, difficult programming, and difficult incorporation of fault tolerance. Reliance on optical gates as its fundamental building elements is shown to give poor energy utilization. Programmable optoelectronic multiprocessor (POEM) systems, on the other hand, provide the architectural flexibility for good computational efficiency, use an energy-efficient combination of technologies, and support traditional programming methodologies and fault tolerance. Although the inherent clock speed of POEM systems is slower than that of SS systems, for most problems they will provide greater computational throughput. This comparison does not take into account the recent addition of crossover interconnect and space-variant masks to the SS architecture.

  2. Waterproof AlInGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics

    NASA Astrophysics Data System (ADS)

    Kim, Rak-Hwan; Kim, Dae-Hyeong; Xiao, Jianliang; Kim, Bong Hoon; Park, Sang-Il; Panilaitis, Bruce; Ghaffari, Roozbeh; Yao, Jimin; Li, Ming; Liu, Zhuangjian; Malyarchuk, Viktor; Kim, Dae Gon; Le, An-Phong; Nuzzo, Ralph G.; Kaplan, David L.; Omenetto, Fiorenzo G.; Huang, Yonggang; Kang, Zhan; Rogers, John A.

    2010-11-01

    Inorganic light-emitting diodes and photodetectors represent important, established technologies for solid-state lighting, digital imaging and many other applications. Eliminating mechanical and geometrical design constraints imposed by the supporting semiconductor wafers can enable alternative uses in areas such as biomedicine and robotics. Here we describe systems that consist of arrays of interconnected, ultrathin inorganic light-emitting diodes and photodetectors configured in mechanically optimized layouts on unusual substrates. Light-emitting sutures, implantable sheets and illuminated plasmonic crystals that are compatible with complete immersion in biofluids illustrate the suitability of these technologies for use in biomedicine. Waterproof optical-proximity-sensor tapes capable of conformal integration on curved surfaces of gloves and thin, refractive-index monitors wrapped on tubing for intravenous delivery systems demonstrate possibilities in robotics and clinical medicine. These and related systems may create important, unconventional opportunities for optoelectronic devices.

  3. First-principles calculation for phonon and optoelectronic properties of CsSnI3

    NASA Astrophysics Data System (ADS)

    Bano, Amreen; Khare, Preeti; Gaur, N. K.

    2016-05-01

    The CsSnI3 crystal belongs to an interesting class of semiconducting perovskite which is currently used in thin-film field-effect transistor made of organics-inorganics hybrid compounds. The benefit of using hybrid compounds resides in their ability to combine the advantage of these two classes of compounds: the high mobility of inorganic materials and the ease of processing of organic materials. In spite of the growing attention of this new material, very little is known about the dielectric and optical properties of the inorganic part of this compounds. A theoretical study of phonon, dielectric and optical properties of metal-halide cubic perovskite, CsSnI3 is presented, using first-principles calculations with planewave pseudopotential method as personified in PWSCF code. In this approach local density approximation (LDA) is used for exchange-correlation potential. The optical properties shows that this compound has applications in optoelectronic devices.

  4. Final report on LDRD project 52722 : radiation hardened optoelectronic components for space-based applications.

    SciTech Connect

    Hargett, Terry W.; Serkland, Darwin Keith; Blansett, Ethan L.; Geib, Kent Martin; Sullivan, Charles Thomas; Hawkins, Samuel D.; Wrobel, Theodore Frank; Keeler, Gordon Arthur; Klem, John Frederick; Medrano, Melissa R.; Peake, Gregory Merwin; Karpen, Gary D.; Montano, Victoria A.

    2003-12-01

    This report describes the research accomplishments achieved under the LDRD Project 'Radiation Hardened Optoelectronic Components for Space-Based Applications.' The aim of this LDRD has been to investigate the radiation hardness of vertical-cavity surface-emitting lasers (VCSELs) and photodiodes by looking at both the effects of total dose and of single-event upsets on the electrical and optical characteristics of VCSELs and photodiodes. These investigations were intended to provide guidance for the eventual integration of radiation hardened VCSELs and photodiodes with rad-hard driver and receiver electronics from an external vendor for space applications. During this one-year project, we have fabricated GaAs-based VCSELs and photodiodes, investigated ionization-induced transient effects due to high-energy protons, and measured the degradation of performance from both high-energy protons and neutrons.

  5. Nuclear fuel assemblies' deformations measurement by optoelectronic methods in cooling ponds

    NASA Astrophysics Data System (ADS)

    Senchenko, E. S.; Zavyalov, P. S.; Finogenov, L. V.; Khakimov, D. R.

    2013-12-01

    Increasing the reliability and life-time of nuclear fuel is actual problems for nuclear power engineering. It takes to provide the high geometric stability of nuclear fuel assemblies (FA) under exploitation, since various factors cause FA mechanical deformation (bending and twisting). To obtain the objective information and make recommendations for the FA design improvement one have to fulfill the post reactor FA analysis. Therefore it takes measurements of the FA geometric parameters in cooling ponds of nuclear power plants. As applied to this problem we have developed and investigated the different optoelectronic methods, namely, structured light method, television and shadow ones. In this paper effectiveness of these methods has been investigated using the special experimental test stand and fulfilled researches are described. The experimental results of FA measurements by different methods and recommendation for their usage is given.

  6. Optoelectronic measurement of x-ray synchrotron pulses: A proof of concept demonstration

    NASA Astrophysics Data System (ADS)

    Durbin, Stephen M.; Mahmood, Aamer; Caffee, Marc; Savikhin, Sergei; Dufresne, Eric M.; Wen, Haidan; Li, Yuelin

    2013-02-01

    Optoelectronic detection using photoconductive coplanar stripline devices has been applied to measuring the time profile of x-ray synchrotron pulses, a proof of concept demonstration that may lead to improved time-resolved x-ray studies. Laser sampling of current vs time delay between 12 keV x-ray and 800 nm laser pulses reveal the ˜50 ps x-ray pulse width convoluted with the ˜200 ps lifetime of the conduction band carriers. For GaAs implanted with 8 MeV protons, a time profile closer to the x-ray pulse width is observed. The protons create defects over the entire depth sampled by the x-rays, trapping the x-ray excited conduction electrons and minimizing lifetime broadening of the electrical excitation.

  7. Temperature dependence of the properties of DBR mirrors used in surface normal optoelectronic devices

    NASA Technical Reports Server (NTRS)

    Dudley, J. J.; Crawford, D. L.; Bowers, J. E.

    1992-01-01

    The variation in the center wavelength of distributed Bragg reflectors used in optoelectronic devices, such as surface emitting lasers and Fabry-Perot modulators, is measured as the temperature of the mirrors changes over the range 25 C to 105 C. An analytic expression for the shift in center wavelength with temperature is presented. The mirrors measured are made of InP/InGaAsP, GaAs/AlAs, and Si/SiN(x). The linear shifts in center wavelength are 0.110 +/- 0.003 nm/C, 0.087 +/- 0.003 nm/C, and 0.067 +/- 0.007 nm/C for the InP/InGaAsP, GaAs/AlAs, and Si/SiN mirrors, respectively. Based on these data, the change in penetration depth with temperature is calculated.

  8. Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applications

    NASA Technical Reports Server (NTRS)

    Kim, J. H.; Katz, J.; Lin, S. H.; Psaltis, D.

    1989-01-01

    A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.

  9. Observations of deep levels in 4H-SiC using optoelectronic modulation spectroscopy

    NASA Astrophysics Data System (ADS)

    Chiu, Chi-Hsin; Parmiter, P. J. M.; Hilton, K.; Uren, M. J.; Swanson, J. G.

    2001-10-01

    Optoelectronic modulation spectroscopy (OEMS) has been used to reveal defect states in 4H-SiC. Pairs of magnitude and phase spectra have been used to infer whether they were electron or hole traps. Eleven discrete trap responses have been observed, eight were assigned as electron traps and three as hole traps. Five of these had been observed previously using optical admittance spectroscopy (OAS). An electron trap at 1.20 eV gave the most prominent response with a distinctive signature indicating that these traps were spatially delocalized with an extent of at least 1.35 nm, possibly associated with an extended defect structure. An unresolved continuum of be the superimposed response of an electron and hole trap at closely similar energies. Cosistency has been demonstrated with previous work using DLOS and OAS.

  10. Investigations of DC power supplies with optoelectronic transducers and RF energy converters

    NASA Astrophysics Data System (ADS)

    Guzowski, B.; Gozdur, R.; Bernacki, L.; Lakomski, M.

    2016-04-01

    Fiber Distribution Cabinets (FDC) monitoring systems are increasingly popular. However it is difficult to realize such system in passive FDC, due to lack of source of power supply. In this paper investigation of four different DC power supplies with optoelectronic transducers is described. Two converters: photovoltaic power converter and PIN photodiode can convert the light transmitted through the optical fiber to electric energy. Solar cell and antenna RF-PCB are also tested. Results presented in this paper clearly demonstrate that it is possible to build monitoring system in passive FDC. During the tests maximum obtained output power was 11 mW. However all converters provided enough power to excite 32-bit microcontroller with ARM-cores and digital thermometer.

  11. Modification of optoelectronic properties of conjugated oligomers due to donor/acceptor functionalization: DFT study

    NASA Astrophysics Data System (ADS)

    Zhugayevych, Andriy; Postupna, Olena; Wang, Hsing-Lin; Tretiak, Sergei

    2016-12-01

    A comprehensive DFT study of a set of oligo(p-phenylene vinylene) molecules is performed to understand the structural and electronic changes upon functionalization. These changes are rationalized within a model considering frontier molecular orbitals of the π -conjugated system and σ -bonding orbital by which the functional group is attached to the host molecule. Two simple scalar quantum chemical descriptors are shown to correlate with optoelectronic properties of the functionalized molecule: the electronegativity and the relative electric dipole moment of the smallest π -closed shell subsystem containing the functional group and the terminal segment of the host molecule (phenyl). Both descriptors correlate linearly with the empirical Hammett σp constant for a set of 24 functional groups. Comparison with available experimental data on UV-vis absorption and cyclic voltammetry is made. Observed structural changes reflect changes in the electronic density.

  12. Phase transformation in SiOx/SiO₂ multilayers for optoelectronics and microelectronics applications.

    PubMed

    Roussel, M; Talbot, E; Pratibha Nalini, R; Gourbilleau, F; Pareige, P

    2013-09-01

    Due to the quantum confinement, silicon nanoclusters (Si-ncs) embedded in a dielectric matrix are of prime interest for new optoelectronics and microelectronics applications. In this context, SiO(x)/SiO₂ multilayers have been prepared by magnetron sputtering and subsequently annealed to induce phase separation and Si clusters growth. The aim of this paper is to study phase separation processes and formation of nanoclusters in SiO(x)/SiO₂ multilayers by atom probe tomography. Influences of the silicon supersaturation, annealing temperature and SiO(x) and SiO₂ layer thicknesses on the final microstructure have been investigated. It is shown that supersaturation directly determines phase separation regime between nucleation/classical growth and spinodal decomposition. Annealing temperature controls size of the particles and interface with the surrounding matrix. Layer thicknesses directly control Si-nc shapes from spherical to spinodal-like structures.

  13. Hybrid optoelectronic vector matrix multipliers using guided-wave and micro-optic components

    NASA Astrophysics Data System (ADS)

    Handerek, V.; McCarthy, A.; Laycock, L.

    2007-10-01

    There is a need for faster processing hardware to provide modern radar systems with advanced capabilities such as multiple hypothesis tracking, real-time clutter removal and space-time adaptive beamforming (STAP) for jammer nulling. One approach that may help to meet this need is to use analogue methods in parts of the signal processing chain using optoelectronics. The vector-matrix multiplier is a powerful optical processing architecture that potentially offers very large gains in computation speed, but has not so far become commercially successful. This paper reports investigation of a novel arrangement for this type of processor that is aimed at improving the prospects for commercialisation, using guided-wave and micro-optic components. This approach will assist miniaturisation of the processor and improve ruggedness and scalability to large matrices.

  14. Modelling the spine as a deformable body: Feasibility of reconstruction using an optoelectronic system.

    PubMed

    Ranavolo, Alberto; Don, Romildo; Draicchio, Francesco; Bartolo, Michelangelo; Serrao, Mariano; Padua, Luca; Cipolla, Gianfranco; Pierelli, Francesco; Iavicoli, Sergio; Sandrini, Giorgio

    2013-03-01

    The aims of this study were to develop a kinematic model of the spine, seen as a continuous deformable body and to identify the smallest set of surface markers allowing adequate measurements of spine motion. The spine is widely considered as a rigid body or as a kinematic chain made up of a smaller number of segments, thereby introducing an approximation. It would be useful to have at our disposal a technique ensuring accurate and repeatable measurement of the shape of the whole spine. Ten healthy subjects underwent a whole-spine radiographic assessment and, simultaneously, an optoelectronic recording. Polynomial interpolations of the vertebral centroids, of the whole set of markers were performed. The similarity of the resulting curves was assessed. Our findings indicate that spine shape can be reproduced by 5th order polynomial interpolation. The best approximating curves are obtained from either 10- or 9-marker sets. Sagittal angles are systematically underestimated.

  15. Monitoring of 60Co radiation-source parameters by optoelectronic instrumentation

    NASA Astrophysics Data System (ADS)

    Medved Rogina, Branka; Vojnovic, Bozidar D.

    1995-10-01

    Problems of measurement of the radiation dose level and determining the position of the 60Co radiation source rods are discussed. The continuous gamma ray source 60Co is used for various scientific and industrial, food and medical, irradiation applications with doses up to 104 Gy. For a radiation sensor the PCS optical fiber could be used. By radiation effects testing PCS fiber is found to have adequate sensitivity in the visible range up to 1.47 multiplied by 10-1 dB/kmGy at high exposure, up to 103 Gy 60Co ionizing source irradiation. The position of the source rods is determined relative to the safety position, by the sensor linked with source position using a mechanical transmission system. The digital position sensor based on the optoelectronic impulse source is developed, with accuracy plus or minus 1 mm for the whole vertical position change of the source and great exploitation resistance particularly to vibrations.

  16. Ba2TeO as an optoelectronic material: First-principles study

    DOE PAGES

    Sun, Jifeng; Shi, Hongliang; Du, Mao-Hua; ...

    2015-05-21

    The band structure, optical and defects properties of Ba2TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or transparent conducting material. Ba2TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical band gap1. We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show a infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba2TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of themore » donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.« less

  17. Ba2TeO as an optoelectronic material: First-principles study

    SciTech Connect

    Sun, Jifeng; Shi, Hongliang; Du, Mao-Hua; Siegrist, Theo; Singh, David J.

    2015-05-21

    The band structure, optical and defects properties of Ba2TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or transparent conducting material. Ba2TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical band gap1. We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show a infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba2TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of the donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.

  18. Use of optoelectronic tweezers in manufacturing—accurate solder bead positioning

    NASA Astrophysics Data System (ADS)

    Zhang, Shuailong; Liu, Yongpeng; Juvert, Joan; Tian, Pengfei; Navarro, Jean-Claude; Cooper, Jonathan M.; Neale, Steven L.

    2016-11-01

    In this work, we analyze the use of optoelectronic tweezers (OETs) to manipulate 45 μm diameter Sn62Pb36Ag2 solder beads with light-induced dielectrophoresis force and we demonstrate high positioning accuracy. It was found that the positional deviation of the solder beads increases with the increase of the trap size. To clarify the underlying mechanism, simulations based on the integration of the Maxwell stress tensor were used to study the force profiles of OET traps with different sizes. It was found that the solder beads felt a 0.1 nN static friction or stiction force due to electrical forces pulling them towards the surface and that this force is not dependent on the size of the trap. The stiction limits the positioning accuracy; however, we show that by choosing a trap that is just larger than the solder bead sub-micron positional accuracy can be achieved.

  19. Optoelectronic technology profiles: motivating and developing research skills in undergraduate students

    NASA Astrophysics Data System (ADS)

    Kane, D. M.

    2009-06-01

    A case study is described of the redesign of an assessment task - the writing of an Optoelectronic Technology profile - to achieve improved outcomes in student education and capability development, in particular, research skills. Attention is drawn to the value of a formally scheduled discussion between teacher and student around controlling the scope of the profile via an appropriately constructed "brief", and the selection and evaluation of the reference resources to be used in completing the task. Student motivation is improved through "student publishing" and encouraging students to regard their technology profile as an example of their work that can be shown to potential employers, possibly as part of a portfolio. Students have the choice as to whether they will also use the technology profile task as a vehicle to develop teamwork experience and skills.

  20. Characterizing the local optoelectronic performance of organic solar cells with scanning-probe microscopy

    NASA Astrophysics Data System (ADS)

    Coffey, David C.

    2007-12-01

    Conjugated polymers, small molecules, and colloidal semiconductor nanocrystals are promising materials for use in low-cost, thin-film solar cells. The photovoltaic performance of these materials, however, is highly dependent on film structure, and directly correlating local film structures with device performance remains challenging. This dissertation describes several techniques we have developed to probe and control the local optoelectronic properties of organic semiconducting films. First, with an aim of rapidly fabricating photovoltaic films with varying morphology, we demonstrate that Dip-Pen Nanolithography (DPN) can be used to control nanoscale phase separation with sub-150 nm lateral resolution in polymer films that are 20--80 nm thick. This control is based on writing monolayer chemical templates that nucleate phase separation, and we use this technique to study heterogeneous nucleation in thin films. Second, we use time-resolved electrostatic force microscopy (trEFM) to measure photoexcited charge in polymer films with a resolution of 100 nm and 100 mus. We show that such data can predict the external quantum efficiencies of polymer photodiodes, and can thus link device performance with local optoelectronic properties. When applied to the study of blended polyfluorene films, we show that domain centers can buildup charge faster then domain interfaces, which indicates that polymer/polymer blend devices should be modeled as having impure donor/acceptor domains. Third, we use photoconductive atomic force microscopy (pcAFM) to map local photocurrents with 20 nm-resolution in polymer/fullerene solar cells- achieving an order of magnitude better resolution than previous techniques. We present photocurrent maps under short-circuit conditions (zero applied bias), as well as under various applied voltages. We find significant variations in the short-circuit current between regions that appear identical in AFM topography. These variations occur from one domain to