Science.gov

Sample records for oxide film obta

  1. Stabilized chromium oxide film

    DOEpatents

    Garwin, Edward L.; Nyaiesh, Ali R.

    1988-01-01

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  2. Stabilized chromium oxide film

    DOEpatents

    Nyaiesh, A.R.; Garwin, E.L.

    1986-08-04

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  3. Metal oxide films on metal

    DOEpatents

    Wu, Xin D.; Tiwari, Prabhat

    1995-01-01

    A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

  4. Process for fabrication of metal oxide films

    SciTech Connect

    Tracy, C.E.; Benson, D.; Svensson, S.

    1990-07-17

    This invention is comprised of a method of fabricating metal oxide films from a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of metal oxides, e.g. electro-optically active transition metal oxides, at a high deposition rate. The presence of hydrogen during the plasma reaction enhances the deposition rate of the metal oxide. Various types of metal oxide films can be produced.

  5. Oxidation of epitaxial Ce films

    NASA Astrophysics Data System (ADS)

    Vescovo, E.; Carbone, C.

    1996-02-01

    Single-crystal Ce films of more than 300 Å thickness have been epitaxially grown on W(110). Their interaction with molecular oxygen at room temperature has been studied by angle-resolved photoemission, low-energy electron diffraction, and Auger spectroscopy. As a function of the oxygen exposure, the reaction is found to proceed through a sequence of three distinct stages: (i) ordered dissociative surface adsorption; (ii) formation of an ordered Ce2O3-like surface oxide; and (iii) gradual conversion of the sesquioxide into a disordered surface dioxide CeO2-x. A structurally different Ce2O3 oxide is obtained after high oxygen exposures followed by heating at 450 K. The formation of the epitaxial surface sesquioxides is favored by the good lattice match with the Ce substrate. The same type of structural relation might lead to the formation of ordered sesquioxides on other rare-earth surfaces exposing hexagonal planes.

  6. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  7. Electrochromism in copper oxide thin films

    SciTech Connect

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  8. CVD diamond film oxidation resistance research

    NASA Astrophysics Data System (ADS)

    Jing, Longwei; Wang, Xiaoping; Wang, Lijun; Pan, Xiufang; Sun, Yiqing; Wang, Jinye; Sun, Hongtao

    2013-12-01

    Diamond films were deposited on a silicon substrate by microwave plasma chemical vapor deposition system, and its oxidation experiments were carried out in atmospheric environmental condition by using a muffle furnace. Inatmospheric environment (the temperature is from 400°C to 900°C) the oxidation resistance of diamond thin films was investigated. The results indicate that under the atmospheric environment diamond thin film surface morphology did not change after 6 hours at 400°C. Diamond thin film surface morphology began to change after 2 hours at 600°C, and when time was extended to 4 hours, the diamond thin film surface morphology changed significantly. The surface morphology of diamond films began to change after 15 minutes at a 700°C condition and when time was extended to 6 hours diamond films were all destroyed. All the diamond films on the silicon substrate disappeared completely in 20 minutes at 900°C. The intact crystal face is the reason that natural diamond has stable chemical property. The crystal face of synthetic diamond film has a lot of defects, especially on the side. Oxidation of the diamond films begin with the grain boundary and defects.

  9. High quality oxide films on substrates

    DOEpatents

    Ruckman, M.W.; Strongin, M.; Gao, Y.L.

    1994-02-01

    A method is described for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material. 4 figures.

  10. High quality oxide films on substrates

    DOEpatents

    Ruckman, Mark W.; Strongin, Myron; Gao, Yong L.

    1994-01-01

    A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.

  11. Solution Grown Antimony Doped Zinc Oxide Films

    NASA Astrophysics Data System (ADS)

    Riley, Conor T.

    Zinc oxide is an extensively studied semiconducting material due to its versatile properties applicable to many technologies such as electronics, optoelectronics, sensing and renewable energy. Although zinc oxide films have been created for device fabrication, the methods used to synthesize them are expensive and unrealistic for affordable commercial devices. In addition, zinc oxide is intrinsically n-type making the realization of stable p-type materials a great challenge for light emitting diodes, solar cells and UV lasing. In this thesis zinc oxide films are created using low cost solution methods. To accomplish this, a previously unreported surfactant, tert-butanol, is used. Several controlled experiments vary the concentration of tert-butanol, zinc and oxygen sources to demonstrate the ability of tert-butanol to create low cost films. Further, small amounts of antimony glycolate are added to the reaction solution, to create antimony doped zinc oxide films on sapphire and silicon substrates. Although hall measurements indicate that the films are n-type, a discussion of antimony activation provides a feasible path for the realization of low cost, p-type zinc oxide films.

  12. Zinc oxide thin film acoustic sensor

    SciTech Connect

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah; Mansour, Hazim Louis

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  13. Mesoscopically structured nanocrystalline metal oxide thin films

    NASA Astrophysics Data System (ADS)

    Carretero-Genevrier, Adrian; Drisko, Glenna L.; Grosso, David; Boissiere, Cédric; Sanchez, Clement

    2014-11-01

    This review describes the main successful strategies that are used to grow mesostructured nanocrystalline metal oxide and SiO2 films via deposition of sol-gel derived solutions. In addition to the typical physicochemical forces to be considered during crystallization, mesoporous thin films are also affected by the substrate-film relationship and the mesostructure. The substrate can influence the crystallization temperature and the obtained crystallographic orientation due to the interfacial energies and the lattice mismatch. The mesostructure can influence the crystallite orientation, and affects nucleation and growth behavior due to the wall thickness and pore curvature. Three main methods are presented and discussed: templated mesoporosity followed by thermally induced crystallization, mesostructuration of already crystallized metal oxide nanobuilding units and substrate-directed crystallization with an emphasis on very recent results concerning epitaxially grown piezoelectric structured α-quartz films via crystallization of amorphous structured SiO2 thin films.

  14. Electro-deposition of superconductor oxide films

    SciTech Connect

    Bhattacharya, Raghu N.

    2001-01-01

    Methods for preparing high quality superconducting oxide precursors which are well suited for further oxidation and annealing to form superconducting oxide films. The method comprises forming a multilayered superconducting precursor on a substrate by providing an electrodeposition bath comprising an electrolyte medium and a substrate electrode, and providing to the bath a plurality of precursor metal salts which are capable of exhibiting superconducting properties upon subsequent treatment. The superconducting precursor is then formed by electrodepositing a first electrodeposited (ED) layer onto the substrate electrode, followed by depositing a layer of silver onto the first electrodeposited (ED) layer, and then electrodepositing a second electrodeposited (ED) layer onto the Ag layer. The multilayered superconducting precursor is suitable for oxidation at a sufficient annealing temperature in air or an oxygen-containing atmosphere to form a crystalline superconducting oxide film.

  15. Electrodeposition of silver(II) oxide films

    SciTech Connect

    Breyfogle, B.E.; Hung, C.J.; Shumsky, M.G.; Switzer, J.A.

    1996-09-01

    AgO has been studied extensively for its use as the cathode material in zinc-silver oxide batteries. Continuous films of silver(II) oxide (AgO) have been electrodeposited directly from aqueous solutions of 50 mM silver acetate/25 mM sodium acetate onto 430 stainless steel, polycrystalline platinum, and indium-tin oxide-coated glass. Current efficiencies for the electrodeposition process ranged from 62 to 95% and were a function of the applied current density. X-ray diffraction of the electrodeposited films reveals a [010] texture when the thickness is greater than 1 {micro}m. Freshly ground films or powders exhibit only reflections consistent with the monoclinic AgO structure. Rietveld analysis confirms the ground films are single-phase AgO with a P 2{sub 1}/c space group. The films were imaged and film thickness was measured by atomic force microscopy. Thermogravimetric analysis shows that the films begin to decompose in air above 130 C, with an abrupt weight loss between 180 and 200 C. The total weight loss of 6.4 to 6.5% corresponds to thermal decomposition of AgO to Ag{sub 2}O with loss of oxygen. A direct optical bandgap of 1.1 eV was measured. The black AgO films absorb strongly in the near infrared and throughout the visible region. The four-point resistivity of the AgO films was 12 {+-} 1 {Omega} cm.

  16. Graphene oxide film as solid lubricant.

    PubMed

    Liang, Hongyu; Bu, Yongfeng; Zhang, Junyan; Cao, Zhongyue; Liang, Aimin

    2013-07-10

    As a layered material, graphene oxide (GO) film is a good candidate for improving friction and antiwear performance of silicon-based MEMS devices. Via a green electrophoretic deposition (EPD) approach, GO films with tunable thickness in nanoscale are fabricated onto silicon wafer in a water solution. The morphology, microstructure, and mechanical properties as well as the friction coefficient and wear resistance of the films were investigated. The results indicated that the friction coefficient of silicon wafer was reduced to 1/6 its value, and the wear volume was reduced to 1/24 when using GO film as solid lubricant. These distinguished tribology performances suggest that GO films are expected to be good solid lubricants for silicon-based MEMS/NEMS devices. PMID:23786494

  17. High quality transparent conducting oxide thin films

    DOEpatents

    Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

    2012-08-28

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  18. Patterning of Indium Tin Oxide Films

    NASA Technical Reports Server (NTRS)

    Immer, Christopher

    2008-01-01

    A relatively rapid, economical process has been devised for patterning a thin film of indium tin oxide (ITO) that has been deposited on a polyester film. ITO is a transparent, electrically conductive substance made from a mixture of indium oxide and tin oxide that is commonly used in touch panels, liquid-crystal and plasma display devices, gas sensors, and solar photovoltaic panels. In a typical application, the ITO film must be patterned to form electrodes, current collectors, and the like. Heretofore it has been common practice to pattern an ITO film by means of either a laser ablation process or a photolithography/etching process. The laser ablation process includes the use of expensive equipment to precisely position and focus a laser. The photolithography/etching process is time-consuming. The present process is a variant of the direct toner process an inexpensive but often highly effective process for patterning conductors for printed circuits. Relative to a conventional photolithography/ etching process, this process is simpler, takes less time, and is less expensive. This process involves equipment that costs less than $500 (at 2005 prices) and enables patterning of an ITO film in a process time of less than about a half hour.

  19. Aluminum oxide film thickness and emittance

    SciTech Connect

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55{degrees}C) moderator for about a year. The average moderator temperature was assumed to be 30{degrees}C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 {mu}m {plus minus} 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 {mu}m {plus minus} 11%. Total hemispherical emittance is predicted to be 0.69 at 96{degrees}C, decreasing to 0.45 at 600{degrees}C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values.

  20. Aluminum oxide film thickness and emittance

    SciTech Connect

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55{degrees}C) moderator for about a year. The average moderator temperature was assumed to be 30{degrees}C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 {mu}m {plus_minus} 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 {mu}m {plus_minus} 11%. Total hemispherical emittance is predicted to be 0.69 at 96{degrees}C, decreasing to 0.45 at 600{degrees}C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values.

  1. Thin-Film Solid Oxide Fuel Cells

    NASA Technical Reports Server (NTRS)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  2. Metal current collect protected by oxide film

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; DeJonghe, Lutgard C.

    2004-05-25

    Provided are low-cost, mechanically strong, highly electronically conductive current collects and associated structures for solid-state electrochemical devices, techniques for forming these structures, and devices incorporating the structures. The invention provides solid state electrochemical devices having as current interconnects a ferritic steel felt or screen coated with a protective oxide film.

  3. Microheterogeneity of ruthenium oxide film anodes

    SciTech Connect

    Roginskaya, Yu.E.; Belova, I.D.; Galyamov, B.S.; Popkov, Yu.M.; Zakhar'in, D.S.

    1988-03-01

    Following an analysis of x-ray diffraction, differential thermal analysis, and infrared and x-ray photoelectron spectroscopy data for ruthenium hydroxide and ruthenium oxide films heat-treated at temperatures between 300 and 600 degrees C, the composition and structure of the ruthenium hydroxide was determined and it was shown that the ruthenium oxide film electrodes (up to 600 degrees C) are inhomogeneous in their composition and structure; they contain regions measuring 15-20 nm with long-rage order which in their composition and structure correspond to the anhydrous rutile phase of ruthenium dioxide, and amorphous regions identical with ruthenium hydroxide. The relation between the electrochemical behavior of the ruthenium oxide electrodes and the results obtained is discussed.

  4. Structural and Mechanical Characteristics of Anodic Oxide Films on Titanium

    SciTech Connect

    Pang, Mengzhi; Eakins, Daniel E; Norton, Murray G; Bahr, David F

    2001-01-01

    Oxide films were grown electrochemically on polycrystalline titanium in 0.1 M sulfuric acid (H2SO4) from open-circuit potential to a final potential of 9.4 V (vs silver-silver chloride [Ag-AgCl]) using three anodization rates: a step polarization, growth at 200 mV/s, and growth at 1 mV/s. Anodic polarization curves showed various degrees of oxygen evolution above 5.4 VAg-AgCl, indicating that the extent of oxide film breakdown depends on film growth rate, with slower growth rates undergoing more severe film breakdown. In-situ characterization of mechanical behavior of oxide films by nanoindentation revealed that the oxide film can sustain a tensile stress up to 2.5 GPa prior to film fracture. Among these three anodization rates, the oxide film formed by step polarization exhibited the highest film-strengthening effect. At applied potentials prior to oxide film breakdown, all films exhibited a strength of ≈1 GPa. The films ranged from amorphous titanium dioxide (TiO2) to anatase, with the extent of crystallization increasing with decreasing film growth rate. Correlations between electrochemical polarization, structural characteristics, and the mechanical behavior of these anodic films are discussed in relationship to electrostrictive stresses, which may lead to the breakdown of passive films. KEY WORDS: anodic polarization, films, nanoindentation, titanium, transmission electron microscopy.

  5. Interfacial Assembly of Graphene Oxide Films

    NASA Astrophysics Data System (ADS)

    Valtierrez, Cain; Ismail, Issam; Macosko, Christopher; Stottrup, Benjamin

    Controlled assembly of monolayer graphene-oxide (GO) films at the air/water interface is of interest for the development of transparent conductive thin films of chemically-derived graphene. We present experimental results from investigations of the assembly of polydisperse GO sheets at the air-water interface. GO nanosheets with lateral dimensions of greater than 10 microns were created using a modified Tour synthesis (Dimiev and Tour, 2014). GO films were generated with conventional Langmuir trough techniques to control lateral packing density. Film morphology was characterized in situ with Brewster angle microscopy. Films were transferred unto a substrate via the Langmuir-Blodgett deposition technique and imaged with fluorescence quenching microscopy. Through pH modulation of the aqueous subphase, it was found that GO's intrinsic surface activity to the interface increased with increasing subphase acidity. Finally, we found a dominant elastic contribution during uniaxial film deformation as measured by anisotropic pressure measurements. A. M. Dimiev, and J. M. Tour, ``Mechanism of GO Formation,'' ACS Nano, 8, (2014)

  6. Influence of doping with third group oxides on properties of zinc oxide thin films

    SciTech Connect

    Palimar, Sowmya Bangera, Kasturi V.; Shivakumar, G. K.

    2013-03-15

    The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 10{sup 3} {Omega}{sup -1} cm{sup -1}. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band.

  7. Metallic oxide switches using thick film technology

    NASA Technical Reports Server (NTRS)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  8. Galvanostatic Ion Detrapping Rejuvenates Oxide Thin Films.

    PubMed

    Arvizu, Miguel A; Wen, Rui-Tao; Primetzhofer, Daniel; Klemberg-Sapieha, Jolanta E; Martinu, Ludvik; Niklasson, Gunnar A; Granqvist, Claes G

    2015-12-01

    Ion trapping under charge insertion-extraction is well-known to degrade the electrochemical performance of oxides. Galvanostatic treatment was recently shown capable to rejuvenate the oxide, but the detailed mechanism remained uncertain. Here we report on amorphous electrochromic (EC) WO3 thin films prepared by sputtering and electrochemically cycled in a lithium-containing electrolyte under conditions leading to severe loss of charge exchange capacity and optical modulation span. Time-of-flight elastic recoil detection analysis (ToF-ERDA) documented pronounced Li(+) trapping associated with the degradation of the EC properties and, importantly, that Li(+) detrapping, caused by a weak constant current drawn through the film for some time, could recover the original EC performance. Thus, ToF-ERDA provided direct and unambiguous evidence for Li(+) detrapping. PMID:26599729

  9. Water clustering on nanostructured iron oxide films

    NASA Astrophysics Data System (ADS)

    Merte, Lindsay R.; Bechstein, Ralf; Peng, Guowen; Rieboldt, Felix; Farberow, Carrie A.; Zeuthen, Helene; Knudsen, Jan; Lægsgaard, Erik; Wendt, Stefan; Mavrikakis, Manos; Besenbacher, Flemming

    2014-06-01

    The adhesion of water to solid surfaces is characterized by the tendency to balance competing molecule-molecule and molecule-surface interactions. Hydroxyl groups form strong hydrogen bonds to water molecules and are known to substantially influence the wetting behaviour of oxide surfaces, but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moiré-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer islands form on the bare film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous water are found to coexist at adjacent hydroxylated and hydroxyl-free domains of the moiré structure.

  10. Water Clustering on Nanostructured Iron Oxide Films

    SciTech Connect

    Merte, L. R.; Bechstein, Ralf; Peng, Guowen; Rieboldt, Felix; Farberow, Carrie A.; Zeuthen, Helene; Knudsen, Jan; Laegsgaard, E.; Wendt, Stefen; Mavrikakis, Manos; Besenbacher, Fleming

    2014-06-30

    The adhesion of water to solid surfaces is characterized by the tendency to balance competing molecule–molecule and molecule–surface interactions. Hydroxyl groups form strong hydrogen bonds to water molecules and are known to substantially influence the wetting behaviour of oxide surfaces, but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moire´-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer islands form on the are film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous water are found to coexist at adjacent hydroxylated and hydroxyl-free domains of the moire´ structure.

  11. Thin zinc oxide and cuprous oxide films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Jeong, Seongho

    Metal oxide semiconductors and heterojunctions made from thin films of metal oxide semiconductors have broad range of functional properties and high potential in optical, electrical and magnetic devices such as light emitting diodes, spintronic devices and solar cells. Among the oxide semiconductors, zinc oxide (ZnO) and cuprous oxide (Cu2O) are attractive because they are inexpensive, abundant and nontoxic. As synthesized ZnO is usually an intrinsic n - type semiconductor with wide band gap (3.4 eV) and can be used as the transparent conducting window layer in solar cells. As synthesized Cu2O is usually a p - type semiconductor with a band gap of 2.17 eV and has been considered as a potential material for the light absorbing layer in solar cells. I used various techniques including metal organic chemical vapor deposition, magnetron sputtering and atomic layer deposition to grow thin films of ZnO and Cu2O and fabricated Cu2O/ZnO heterojunctions. I specifically investigated the optical and electrical properties of Cu 2O thin films deposited on ZnO by MOCVD and showed that Cu2O thin films grow as single phase with [110] axis aligned perpendicular to the ZnO surface which is (0001) plane and with in-plane rotational alignment due to (220) Cu2O || (0002)ZnO; [001]Cu2O || [12¯10]ZnO epitaxy. Moreover, I fabricated solar cells based on these Cu2O/ZnO heterojunctions and characterized them. Electrical characterization of these solar cells as a function of temperature between 100 K and 300 K under illumination revealed that interface recombination and tunneling at the interface are the factors that limit the solar cell performance. To date solar cells based on Cu2O/ZnO heterojunctions had low open circuit voltages (~ 0.3V) even though the expected value is around 1V. I achieved open circuit voltages approaching 1V at low temperature (~ 100 K) and showed that if interfacial recombination is reduced these cells can achieve their predicted potential.

  12. Mechanism for Limiting Thickness of Thin Oxide Films on Aluminum

    NASA Astrophysics Data System (ADS)

    Baran, Jakub D.; Grönbeck, Henrik; Hellman, Anders

    2014-04-01

    A first-principles account of the observed limiting thickness of oxide films formed on aluminum during oxidizing conditions is presented. The results uncover enhanced bonding of oxygen to thin alumina films in contact with metallic aluminum that stems from charge transfer between a reconstructed oxide-metal interface and the adsorbed molecules. The first-principles results are compared with the traditional Cabrera-Mott (CM) model, which is a classical continuum model. Within the CM model, charged surface oxygen species and metal ions generate a (Mott) potential that drives oxidation. An apparent limiting thickness is observed as the oxidation rate decreases rapidly with film growth. The present results support experimental estimates of the Mott potential and film thicknesses. In contrast to the CM model, however, the calculations reveal a real limiting thickness that originates from a diminishing oxygen adsorption energy beyond a certain oxide film thickness.

  13. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  14. Study of the formation process of titanium oxides containing micro arc oxidation film on Mg alloys

    NASA Astrophysics Data System (ADS)

    Song, Yingwei; Dong, Kaihui; Shan, Dayong; Han, En-Hou

    2014-09-01

    A novel micro arc oxidation (MAO) film is developed to protect Mg alloys from corrosion. This film contains plenty of titanium oxides, which exhibits higher chemical stability than traditional MAO films. Especially, the micropores on the surface of the film are in situ sealed during the film formation process instead of the sealing pores post treatment. The film formation process is investigated by the observation of surface and cross-section morphologies and analysis of chemical composition. It is found that the sizes of micropores increase but the quantities decrease with increasing oxidation voltages. The micropores are open in the initial stage of oxidation and then they are sealed gradually. The growth direction of the film takes place change at different oxidation voltages. The elements of F and Ti play a significant role in the film growth process.

  15. High carrier concentration p-type transparent conducting oxide films

    DOEpatents

    Yan, Yanfa; Zhang, Shengbai

    2005-06-21

    A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

  16. Doping in zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Yang, Zheng

    Doping in zinc oxide (ZnO) thin films is discussed in this dissertation. The optimizations of undoped ZnO thin film growth using molecular-beam epitaxy (MBE) are discussed. The effect of the oxygen ECR plasma power on the growth rate, structural, electrical, and optical properties of the ZnO thin films were studied. It was found that larger ECR power leads to higher growth rate, better crystallinity, lower electron carrier concentration, larger resistivity, and smaller density of non-radiative luminescence centers in the ZnO thin films. Low-temperature photoluminescence (PL) measurements were carried out in undoped and Ga-doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8 x 1018 to 1.8 x 1020 cm-3, the dominant PL line at 9 K changes from I1 (3.368--3.371 eV), to IDA (3.317--3.321 eV), and finally to I8 (3.359 eV). The dominance of I1, due to ionized-donor bound excitons, is unexpected in n-type samples, but is shown to be consistent with the temperature-dependent Hall fitting results. We also show that IDA has characteristics of a donor-acceptor-pair transition, and use a detailed, quantitative analysis to argue that it arises from GaZn donors paired with Zn-vacancy (VZn) acceptors. In this analysis, the GaZn0/+ energy is well-known from two-electron satellite transitions, and the VZn0/- energy is taken from a recent theoretical calculation. Typical behaviors of Sb-doped p-type ZnO are presented. The Sb doping mechanisms and preference in ZnO are discussed. Diluted magnetic semiconducting ZnO:Co thin films with above room-temperature TC were prepared. Transmission electron microscopy and x-ray diffraction studies indicate the ZnO:Co thin films are free of secondary phases. The magnetization of the ZnO:Co thin films shows a free electron carrier concentration dependence, which increases dramatically when the free electron carrier concentration exceeds ˜1019 cm -3, indicating a carrier-mediated mechanism for

  17. CW laser compaction of aqueous solution deposited metal oxide films

    SciTech Connect

    Exarhos, G.J.; Dennis, T.

    1997-12-01

    Zirconium dioxide films were spin cast onto silica or silicon substrates from an aqueous solution comprised of the precursor metal nitrate and an organic complexant such as glycine. The hydrated films so derived consist of an amorphous organic phase in which the metal cations and nitrate anions are homogeneously dispersed. Heating to temperatures above 200 {degrees}C leads to film dehydration followed by an auto-catalyzed oxidation reaction whereby the bound nitrate oxidizes the organic matrix leaving behind an intact stoichiometric and crystalline metal oxide film. Films are characterized using AFM, XRD, and optical methods. Transformation processes in these films have been studied in detail by means of spectroscopic ellipsometry and laser induced fluorescence from films doped with a suitable rare earth probe ion such as SM{sup +3}. In the latter case, the measured fluorescence emission spectra are used to identify the hydrated, dehydrated, amorphous and crystalline metal oxide phases which evolve during processing. These transformations also have been induced upon visible CW laser irradiation at fluences in excess of 1 MW/cm{sup 2}. Under these conditions, the film dehydrates and compacts within the footprint of the incident laser beam rendering this region of the film water insoluble. Post irradiation washing of the film with water removes all vestiges of the film outside of the beam footprint suggesting a possible use of this technique for lithography applications. Films subjected to laser irradiation and post irradiation heating have been characterized with respect to thickness, phase composition, crystallite size and optical constants.

  18. p-type conduction in sputtered indium oxide films

    SciTech Connect

    Stankiewicz, Jolanta; Alcala, Rafael; Villuendas, Francisco

    2010-05-10

    We report p-type conductivity in intrinsic indium oxide (IO) films deposited by magnetron sputtering on fused quartz substrates under oxygen-rich ambient. Highly oriented (111) films were studied by x-ray diffraction, optical absorption, and Hall effect measurements. We fabricated p-n homojunctions on these films.

  19. Polymer-assisted aqueous deposition of metal oxide films

    DOEpatents

    Li, DeQuan; Jia, Quanxi

    2003-07-08

    An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.

  20. Effects of oxidative treatments on human hair keratin films.

    PubMed

    Fujii, T; Ito, Y; Watanabe, T; Kawasoe, T

    2012-01-01

    The effects of hydrogen peroxide and commercial bleach on hair and human hair keratin films were examined by protein solubility, scanning electron microscopy (SEM), immunofluorescence microscopy, immunoblotting, and Fourier-transform infrared spectroscopy. Protein solubility in solutions containing urea decreased when the keratin films were treated with hydrogen peroxide or bleach. Oxidative treatments promoted the urea-dependent morphological change by turning films from opaque to transparent in appearance. Immunofluorescence microscopy and immunoblotting showed that the oxidation of amino acids and proteins occurred due to the oxidative treatments, and such occurrence was more evident in the bleach-treated films than in the hydrogen peroxide-treated films. Compared with hair samples, the formation of cysteic acid was more clearly observed in the keratin films after the oxidative treatments.

  1. Effects of oxidative treatments on human hair keratin films.

    PubMed

    Fujii, T; Ito, Y; Watanabe, T; Kawasoe, T

    2012-01-01

    The effects of hydrogen peroxide and commercial bleach on hair and human hair keratin films were examined by protein solubility, scanning electron microscopy (SEM), immunofluorescence microscopy, immunoblotting, and Fourier-transform infrared spectroscopy. Protein solubility in solutions containing urea decreased when the keratin films were treated with hydrogen peroxide or bleach. Oxidative treatments promoted the urea-dependent morphological change by turning films from opaque to transparent in appearance. Immunofluorescence microscopy and immunoblotting showed that the oxidation of amino acids and proteins occurred due to the oxidative treatments, and such occurrence was more evident in the bleach-treated films than in the hydrogen peroxide-treated films. Compared with hair samples, the formation of cysteic acid was more clearly observed in the keratin films after the oxidative treatments. PMID:22487448

  2. Flexible electrostatic nanogenerator using graphene oxide film

    NASA Astrophysics Data System (ADS)

    Tian, He; Ma, Shuo; Zhao, Hai-Ming; Wu, Can; Ge, Jie; Xie, Dan; Yang, Yi; Ren, Tian-Ling

    2013-09-01

    Recently, graphene oxide (GO) super capacitors with ultra-high energy densities have received significant attention. In addition to their use in energy storage, GO capacitors might also have broad applications in renewable energy engineering, such as energy harvesting. Here, a flexible nanogenerator based on GO film is designed. A multilayer structure Al/PI/GO/PI/ITO is made on a flexible PET substrate. The GO nanogenerator could generate a peak voltage of 2 V with a current of 30 nA upon the repetitive application of a 15 N force with a frequency of 1 Hz. Moreover, the output voltage was increased to 34.4 V upon increasing the frequency of force application to 10 Hz. Compared with control samples, embedding GO film with a release structure into the device could significantly enhance the output voltage from 0.1 V to 2.0 V. The mechanism of our nanogenerator can be explained by an electrostatic effect, which is fundamentally different from that of previously reported piezoelectric and triboelectric generators. In this manuscript, we demonstrate flexible nanogenerators with large-area graphene based materials, which may open up new avenues of research with regard to applications in energy harvesting.Recently, graphene oxide (GO) super capacitors with ultra-high energy densities have received significant attention. In addition to their use in energy storage, GO capacitors might also have broad applications in renewable energy engineering, such as energy harvesting. Here, a flexible nanogenerator based on GO film is designed. A multilayer structure Al/PI/GO/PI/ITO is made on a flexible PET substrate. The GO nanogenerator could generate a peak voltage of 2 V with a current of 30 nA upon the repetitive application of a 15 N force with a frequency of 1 Hz. Moreover, the output voltage was increased to 34.4 V upon increasing the frequency of force application to 10 Hz. Compared with control samples, embedding GO film with a release structure into the device could

  3. Pulsed organometallic beam epitaxy of complex oxide films

    NASA Astrophysics Data System (ADS)

    Duray, S. J.; Buchholz, D. B.; Song, S. N.; Richeson, D. S.; Ketterson, J. B.; Marks, T. J.; Chang, R. P. H.

    1991-09-01

    The results are reported of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure and low substrate temperature using organometallic precursors in an oxygen plasma environment. The results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures.

  4. Amorphous tin-cadmium oxide films and the production thereof

    SciTech Connect

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  5. Films based on oxidized starch and cellulose from barley.

    PubMed

    El Halal, Shanise Lisie Mello; Colussi, Rosana; Deon, Vinícius Gonçalves; Pinto, Vânia Zanella; Villanova, Franciene Almeida; Carreño, Neftali Lenin Villarreal; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2015-11-20

    Starch and cellulose fibers were isolated from grains and the husk from barley, respectively. Biodegradable films of native starch or oxidized starches and glycerol with different concentrations of cellulose fibers (0%, 10% and 20%) were prepared. The films were characterized by morphological, mechanical, barrier, and thermal properties. Cellulose fibers isolated from the barley husk were obtained with 75% purity and high crystallinity. The morphology of the films of the oxidized starches, regardless of the fiber addition, was more homogeneous as compared to the film of the native starch. The addition of cellulose fibers in the films increased the tensile strength and decreased elongation. The water vapor permeability of the film of oxidized starch with 20% of cellulose fibers was lower than the without fibers. However the films with cellulose fibers had the highest decomposition with the initial temperature and thermal stability. The oxidized starch and cellulose fibers from barley have a good potential for use in packaging. The addition of cellulose fibers in starch films can contribute to the development of films more resistant that can be applied in food systems to maintain its integrity.

  6. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, Kevin C.; Kodas, Toivo T.

    1994-01-01

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  7. Low reflectance sputtered vanadium oxide thin films on silicon

    NASA Astrophysics Data System (ADS)

    Esther, A. Carmel Mary; Dey, Arjun; Rangappa, Dinesh; Sharma, Anand Kumar

    2016-07-01

    Vanadium oxide thin films on silicon (Si) substrate are grown by pulsed radio frequency (RF) magnetron sputtering technique at RF power in the range of 100-700 W at room temperature. Deposited thin films are characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques to investigate microstructural, phase, electronic structure and oxide state characteristics. The reflectance and transmittance spectra of the films and the Si substrate are recorded at the solar region (200-2300 nm) of the spectral window. Substantial reduction in reflectance and increase in transmittance is observed for the films grown beyond 200 W. Further, optical constants viz. absorption coefficient, refractive index and extinction coefficient of the deposited vanadium oxide films are evaluated.

  8. Altering properties of cerium oxide thin films by Rh doping

    SciTech Connect

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír; and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  9. Method for producing high quality oxide films on substrates

    DOEpatents

    Ruckman, M.W.; Strongin, M.; Gao, Y.L.

    1993-11-23

    A method is described for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material. 4 figures.

  10. Method for producing high quality oxide films on substrates

    DOEpatents

    Ruckman, Mark W.; Strongin, Myron; Gao, Yong L.

    1993-01-01

    A method for providing an oxide film of a material on the surface of a substrate using a reactive deposition of the material onto the substrate surface in the presence of a solid or liquid layer of an oxidizing gas. The oxidizing gas is provided on the substrate surface in an amount sufficient to dissipate the latent heat of condensation occurring during deposition as well as creating a favorable oxidizing environment for the material.

  11. Unidirectional oxide hetero-interface thin-film diode

    SciTech Connect

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  12. Two kinds of composite films: Graphene oxide/carbon nanotube film and graphene oxide/activated carbon film via a self-assemble preparation process

    NASA Astrophysics Data System (ADS)

    Zou, Li-feng; Ma, Nan; Sun, Mei; Ji, Tian-hao

    2014-11-01

    Two kinds of free-standing composite films, including graphene oxide and activated carbon film as well as graphene oxide and carbon nanotube film, were fabricated through a simple suspension mixing and then natural deposition process. The films were characterized by various measurement techniques in detail. The results show that the composite films without any treatment almost still remain the original properties of the corresponding precursors, and exhibit loose structure, which can be easily broken in water; whereas after treated at 200 °C in air, the films become relatively more dense, and even if immersed into concentrated strong alkali or acid for five days, they still keep the film-morphologies, but regretfully, they show obvious brittleness and slight hydrophilicity. As soon as the treated films are performed in high concentrated strong alkali for about one day, their brittleness and wettability can be improved and became good flexibility and complete hydrophilicity.

  13. Influence of film thickness on laser ablation threshold of transparent conducting oxide thin-films

    NASA Astrophysics Data System (ADS)

    Rung, S.; Christiansen, A.; Hellmann, R.

    2014-06-01

    We report on a comprehensive study of the laser ablation threshold of transparent conductive oxide thin films. The ablation threshold is determined for both indium tin oxide and gallium zinc oxide as a function of film thickness and for different laser wavelengths. By using a pulsed diode pumped solid state laser at 1064 nm, 532 nm, 355 nm and 266 nm, respectively, the relationship between optical absorption length and film thickness is studied. We find that the ablation threshold decreases with increasing film thickness in a regime where the absorption length is larger than the film thickness. In turn, the ablation threshold increases in case the absorption length is smaller than the film thickness. In particular, we observe a minimum of the ablation threshold in a region where the film thickness is comparable to the absorption length. To the best of our knowledge, this behaviour previously predicted for thin metal films, has been unreported for all three regimes in case of transparent conductive oxides, yet. For industrial laser scribing processes, these results imply that the efficiency can be optimized by using a laser where the optical absorption length is close to the film thickness.

  14. Study of indium tin oxide films exposed to atomic axygen

    NASA Technical Reports Server (NTRS)

    Snyder, Paul G.; De, Bhola N.; Woollam, John A.; Coutts, T. J.; Li, X.

    1989-01-01

    A qualitative simulation of the effects of atomic oxygen has been conducted on indium tin oxide (ITO) films prepared by dc sputtering onto room-temperature substrates, by exposing them to an RF-excited oxygen plasma and characterizing the resulting changes in optical, electrical, and structural properties as functions of exposure time with ellipsometry, spectrophotometry, resistivity, and X-ray measurements. While the films thus exposed exhibit reduced resistivity and optical transmission; both of these effects, as well as partial crystallization of the films, may be due to sample heating by the plasma. Film resistivity is found to stabilize after a period of exposure.

  15. Structural characterization of impurified zinc oxide thin films

    SciTech Connect

    Trinca, L. M.; Galca, A. C. Stancu, V. Chirila, C. Pintilie, L.

    2014-11-05

    Europium doped zinc oxide (Eu:ZnO) thin films have been obtained by pulsed laser deposition (PLD). 002 textured thin films were achieved on glass and silicon substrates, while hetero-epilayers and homo-epilayers have been attained on single crystal SrTiO{sub 3} and ZnO, respectively. X-ray Diffraction (XRD) was employed to characterize the Eu:ZnO thin films. Extended XRD studies confirmed the different thin film structural properties as function of chosen substrates.

  16. A novel Graphene Oxide film: Synthesis and Dielectric properties

    NASA Astrophysics Data System (ADS)

    Canimkurbey, Betul; San, Sait Eren; Yasin, Muhammad; Köse, Muhammet Erkan

    In this work, we used Hummers method to synthesize Graphene Oxide (GO) and its parallel plate impedance spectroscopic technique to investigate dielectric properties. Graphene Oxide films were coated using drop casting method on ITO substrate. To analyze film morphology, atomic force microscopy was used. Dielectrics measurements of the samples were performed using impedance analyzer (HP-4194) in frequency range (100 Hz to 10MHz) at different temperatures. It was observed that the films' AC conductivity σac varied with angular frequency, ω as ωS, with S<1. The electrical properties of GO showed changes depending on both frequency and temperature. We observed GO film contains direct current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Using solution processed Graphene Oxide will provide potential for organic electronic applications through its photon absorption and transmittance capability in the visible range and excellent electrical parameters.

  17. Ordered fragmentation of oxide thin films at submicron scale

    PubMed Central

    Guo, L.; Ren, Y.; Kong, L. Y.; Chim, W. K.; Chiam, S. Y.

    2016-01-01

    Crack formation is typically undesirable as it represents mechanical failure that compromises strength and integrity. Recently, there have also been numerous attempts to control crack formation in materials with the aim to prevent or isolate crack propagation. In this work, we utilize fragmentation, at submicron and nanometre scales, to create ordered metal oxide film coatings. We introduce a simple method to create modified films using electroplating on a prepatterned substrate. The modified films undergo preferential fragmentation at locations defined by the initial structures on the substrate, yielding ordered structures. In thicker films, some randomness in the characteristic sizes of the fragments is introduced due to competition between crack propagation and crack creation. The method presented allows patterning of metal oxide films over relatively large areas by controlling the fragmentation process. We demonstrate use of the method to fabricate high-performance electrochromic structures, yielding good coloration contrast and high coloration efficiency. PMID:27748456

  18. Ordered fragmentation of oxide thin films at submicron scale

    NASA Astrophysics Data System (ADS)

    Guo, L.; Ren, Y.; Kong, L. Y.; Chim, W. K.; Chiam, S. Y.

    2016-10-01

    Crack formation is typically undesirable as it represents mechanical failure that compromises strength and integrity. Recently, there have also been numerous attempts to control crack formation in materials with the aim to prevent or isolate crack propagation. In this work, we utilize fragmentation, at submicron and nanometre scales, to create ordered metal oxide film coatings. We introduce a simple method to create modified films using electroplating on a prepatterned substrate. The modified films undergo preferential fragmentation at locations defined by the initial structures on the substrate, yielding ordered structures. In thicker films, some randomness in the characteristic sizes of the fragments is introduced due to competition between crack propagation and crack creation. The method presented allows patterning of metal oxide films over relatively large areas by controlling the fragmentation process. We demonstrate use of the method to fabricate high-performance electrochromic structures, yielding good coloration contrast and high coloration efficiency.

  19. Electrochromic lithium nickel oxide thin film by pulsed laser deposition

    SciTech Connect

    Wen, S.J.; Rottkay, K. von; Rubin, M.

    1996-10-01

    * Thin films of lithium nickel oxide were deposited by pulsed laser deposition (PLD) from targets of pressed LiNiO{sub 2} powder with layered structure. The composition, structure and surface air sensitivity of these films were analyzed using a variety of techniques, such as nuclear reaction analysis, Rutherford backscattering spectrometry (RBS), x-ray diffraction, infrared spectroscopy, and atomic force microscopy. Optical properties were measured using a combination of variable angle spectroscopic ellipsometry and IP spectroradiometry. Crystalline structure, surface morphology and chemical composition of Li{sub x}Ni{sub 1-x}O thin films depend strongly on deposition oxygen pressure, temperature as well as substrate target distance. The films produced at temperatures lower than 600 degrees C spontaneously absorb CO{sub 2} and H{sub 2}O at their surface once they are exposed to the air. The films deposited at 600 degrees C proved to be stable in air over a long period. Even when deposited at room temperature the PLD films are denser and more stable than sputtered films. RBS determined that the best electrochromic films had the stoichiometric composition L{sub 0.5}Ni{sub 0.5}O when deposited at 60 mTorr O{sub 2} pressure. Electrochemical tests show that the films exhibit excellent reversibility in the range 1.0 V to 3.4 V versus lithium and long cyclic life stability in a liquid electrolyte half cell. Electrochemical formatting which is used to develop electrochromism in other films and nickel oxide films is not needed for these stoichiometric films. The optical transmission range is almost 70% at 550 nm for 120 nm thick films.

  20. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    SciTech Connect

    Coloma Ribera, R. Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F.

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  1. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NASA Astrophysics Data System (ADS)

    Coloma Ribera, R.; van de Kruijs, R. W. E.; Yakshin, A. E.; Bijkerk, F.

    2015-08-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  2. Photo-oxidation Behaviour of EVA Antimicrobial Films

    NASA Astrophysics Data System (ADS)

    Botta, L.; Scaffaro, R.; La Mantia, F. P.

    2010-06-01

    In this work the photo-oxidation of neat EVA and antimicrobial EVA/Nisin films was studied. Two EVA samples—containing two different vinyl acetate levels—were added with different amounts of nisin. The influence of the matrix type and of the nisin content on the photo-oxidation behaviour was evaluated. The photo-oxidation has been followed by monitoring the change of the mechanical and spectroscopic properties upon artificial exposure to UV-B light. The results revealed that the films incorporating nisin show a better photo resistance with respect to the neat polymer. This improvement becomes weaker with decreasing the amount of nisin incorporated. Moreover the EVA 28 based films showed a much slower photo-oxidation rate in comparison with the EVA 14 based ones.

  3. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  4. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance gm change, threshold voltage VT change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  5. Nitrogen doped zinc oxide thin film

    SciTech Connect

    Li, Sonny X.

    2003-12-15

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  6. Oxide film on metal substrate reduced to form metal-oxide-metal layer structure

    NASA Technical Reports Server (NTRS)

    Youngdahl, C. A.

    1967-01-01

    Electrically conductive layer of zirconium on a zirconium-oxide film residing on a zirconium substrate is formed by reducing the oxide in a sodium-calcium solution. The reduced metal remains on the oxide surface as an adherent layer and seems to form a barrier that inhibits further reaction.

  7. Growth of Epitaxial Oxide Thin Films on Graphene

    NASA Astrophysics Data System (ADS)

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M.; Klein, Norbert; Alford, Neil M.; Petrov, Peter K.

    2016-08-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices.

  8. Growth of Epitaxial Oxide Thin Films on Graphene

    PubMed Central

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M.; Klein, Norbert; Alford, Neil M.; Petrov, Peter K.

    2016-01-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices. PMID:27515496

  9. Growth of Epitaxial Oxide Thin Films on Graphene.

    PubMed

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M; Klein, Norbert; Alford, Neil M; Petrov, Peter K

    2016-01-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices. PMID:27515496

  10. Synthesis and Oxidation Resistance of h-BN Thin Films

    NASA Astrophysics Data System (ADS)

    Stewart, David; Meulenberg, Robert; Lad, Robert

    Hexagonal boron nitride (h-BN) is an exciting 2D material for use in sensors and other electronic devices that operate in harsh, high temperature environments. Not only is h-BN a wide band gap material with excellent wear resistance and high temperature stability, but recent reports indicate that h-BN can prevent metallic substrates from oxidizing above 600°C in low O2 pressures. However, the PVD of highly crystalline h-BN films required for this oxidation protection has proven challenging. In this work, we have explored the growth of h-BN thin films by reactive RF magnetron sputtering from an elemental B target in an Ar/N2 atmosphere. The film growth rate is extremely slow and the resulting films are atomically smooth and homogeneous. Using DC biasing during deposition and high temperature annealing treatments, the degree of film crystallinity can be controlled. The oxidation resistance of h-BN films deposited on inert sapphire and reactive metal substrates such as Zr and ZrB2 has been examined by techniques such as XPS, XRD, and SEM after oxidation between 600 and 1200°C under varying oxygen pressures. The success of h-BN as a passivation layer for metallic substrates in harsh environments is shown to depend greatly on its crystalline quality and defects. Supported by the NSF SusChEM program.

  11. Oxidation and growth of Mg thin films on Ru(001)

    NASA Astrophysics Data System (ADS)

    Huang, H. H.; Jiang, X.; Siew, H. L.; Chin, W. S.; Sim, W. S.; Xu, G. Q.

    1999-08-01

    The oxidation and growth of ultra-thin Mg films on a Ru(001) substrate have been studied using X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS) in the temperature range of 300-1500 K. Our results suggest that the growth of Mg thin films follows a layer-by-layer mode. Upon oxygen adsorption at 300 K, two O 1s peaks were detected on the Mg film. The peak at 532.2-532.6 eV could be attributed to either dioxygen or partially reduced species (O δ-, δ<2), whereas that at 530.1-530.6 eV is due to lattice oxygen in MgO. Annealing of the oxidized film to 800 K causes the conversion of the dioxygen or partially reduced species to the oxide state. Thermal desorption peaks of MgO were directly detected at 1000-1127 and 1350-1380 K, respectively. However, initial evaporation of Mg atoms onto an oxygen pre-adsorbed surface yields a fully oxidized MgO. Further Mg deposition results in the formation of a partially oxidized film with the observation of an O 1s peak at 532.2 eV.

  12. Stress and phase transformation phenomena in oxide films

    SciTech Connect

    Exarhos, G.J.; Hess, N.J.

    1992-04-01

    In situ optical methods are reviewed for characterization of phase transformation processes and evaluation of residual stress in solution- deposited metastable oxide films. Such low density films most often are deposited as disordered phases making them prone to crystallization and attendant densification when subjected to increased temperature and/or applied pressure. Inherent stress imparted during film deposition and its evolution during the transformation are evaluated from phonon frequency shifts seen in Raman spectra (TiO{sub 2}) or from changes in the laser-induced fluorescence emission spectra for films containing rare earth (Sm{sup +3}:Y{sub 3}Al{sub 5}O{sub 12}) or transition metal (Cr{sup +3}:Al{sub 2}O{sub 3}) dopants. The data in combination with measured increases in line intensities intrinsic to the evolving phase are used to follow crystallization processes in thin films. In general, film deposition parameters are found to influence the crystallite ingrowth kinetics and the magnitude of stress and stress relaxation in the film during the transformation. The utility of these methods to probe crystallization phenomena in oxide films will be addressed.

  13. Growth control of the oxidation state in vanadium oxide thin films

    SciTech Connect

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Lee, Ho Nyung

    2014-12-05

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.

  14. Growth control of the oxidation state in vanadium oxide thin films

    DOE PAGES

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Lee, Ho Nyung

    2014-12-05

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase puremore » epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.« less

  15. Growth control of the oxidation state in vanadium oxide thin films

    SciTech Connect

    Lee, Shinbuhm; Meyer, Tricia L.; Lee, Ho Nyung; Park, Sungkyun; Egami, Takeshi

    2014-12-01

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V{sub 2}{sup +3}O{sub 3}, V{sup +4}O{sub 2}, and V{sub 2}{sup +5}O{sub 5}. A well pronounced MIT was only observed in VO{sub 2} films grown in a very narrow range of oxygen partial pressure P(O{sub 2}). The films grown either in lower (<10 mTorr) or higher P(O{sub 2}) (>25 mTorr) result in V{sub 2}O{sub 3} and V{sub 2}O{sub 5} phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO{sub 2} thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

  16. Multifunctional oxide thin films for magnetoelectric and electromechanical applications

    NASA Astrophysics Data System (ADS)

    Baek, Seung Hyub

    Epitaxial multifunctional oxide thin films have been extensively researched to understand and exploit a variety of their physical properties. In order to integrate such versatile properties into real devices, there are several critical issues: (1) high-quality thin film growth, (2) fundamental understanding on reliable performance, and (3) device fabrication process preserving functionality of oxides. We have investigated all these issues, employing two different materials: multiferroic BiFeO3 and piezoelectric Pb(Mg1/3 Nb2/3)O3-PbTiO3 (PMN-PT) epitaxial thin films. For the high-quality thin film growth, we have chosen both BiFeO 3 and PMN-PT thin films as a model system. Bi2O3and PbO are the volatile species in these oxides, which makes it hard to grow phase-pure stoichiometric thin films. Because the properties of oxides are sensitive to stoichiometry and defects, it is highly required to fix such volatile elements during thin film growth. We have grown high-quality epitaxial thin films using a fast-rate off-axis sputtering method and vicinal substrates. In addition, we were able to control domain structures of BiFeO3 thin films using vicinal substrates. For the study on the reliability issues in oxides, we have used BiFeO 3 thin films within the framework of magnetoelectric device applications. For reliable magnetoelectric performance of BiFeO3, polarization switching path has to be (1) deterministic, and to be retained along with (2) time---retention, and (3) cycles--- fatigue. We have used monodomain BiFeO3 thin films as a model system. Based on theoretical predictions, we have studied polarization switching paths, and achieved both selective polarization switching and retention problems using island BiFeO3 structure. We have also investigated polarization fatigue, dependent on switching path. For the demonstration of working devices preserving the original functionality of oxides, we have fabricated micro-cantilevers using PMN-PT heterostructure on Si. The

  17. SPH based modelling of oxide and oxide film formation in gravity die castings

    NASA Astrophysics Data System (ADS)

    Ellingsen, K.; Coudert, T.; M'Hamdi, M.

    2015-06-01

    Gravity die casting is an important casting process which has the capability of making complicated, high-integrity components for e.g. the automotive industry. Oxides and oxide films formed during filling affect the cast product quality. The Smoothed particle hydrodynamics (SPH) method is particularly suited to follow complex flows. The SPH method has been used to study filling of a gravity die including the formation and transport of oxides and oxide films for two different filling velocities. A low inlet velocity leads to a higher amount of oxides and oxide films in the casting. The study demonstrates the usefulness of the SPH method for an increased understanding of the effect of different filling procedures on the cast quality.

  18. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, K.C.; Kodas, T.T.

    1994-01-11

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

  19. Electrochemical formation of a composite polymer-aluminum oxide film

    NASA Astrophysics Data System (ADS)

    Runge-Marchese, Jude Mary

    1997-10-01

    The formation of polymer films through electrochemical techniques utilizing electrolytes which include conductive polymer is of great interest to the coatings and electronics industries as a means for creating electrically conductive and corrosion resistant finishes. One of these polymers, polyamino-benzene (polyaniline), has been studied for this purpose for over ten years. This material undergoes an insulator-to-metal transition upon doping with protonic acids in an acid/base type reaction. Review of prior studies dealing with polyaniline and working knowledge of aluminum anodization has led to the development of a unique process whereby composite polymer-aluminum oxide films are formed. The basis for the process is a modification of the anodizing electrolyte which results in the codeposition of polyaniline during aluminum anodization. A second process, which incorporates electrochemical sealing of the anodic layer with polyaniline was also developed. The formation of these composite films is documented through experimental processing, and characterized by way of scientific analysis and engineering tests. Analysis results revealed the formation of unique dual phase anodic films with fine microstructures which exhibited full intrusion of the columnar aluminum oxide structure with polyaniline, indicating the polymer was deposited as the metal oxidation proceeded. An aromatic amine derivative of polyaniline with aluminum sulfate was determined to be the reaction product within the aluminum oxide phase of the codeposited films. Scientific characterization determined the codeposition process yields completely chemically and metallurgically bound composite films. Engineering studies determined the films, obtained through a single step, exhibited superior wear and corrosion resistance to conventionally anodized and sealed films processed through two steps, demonstrating the increased manufacturing process efficiency that can be realized with the modification of the

  20. Graphene Oxide Transparent Hybrid Film and Its Ultraviolet Shielding Property.

    PubMed

    Xie, Siyuan; Zhao, Jianfeng; Zhang, Bowu; Wang, Ziqiang; Ma, Hongjuan; Yu, Chuhong; Yu, Ming; Li, Linfan; Li, Jingye

    2015-08-19

    Herein, we first reported a facile strategy to prepare functional Poly(vinyl alcohol) (PVA) hybrid film with well ultraviolet (UV) shielding property and visible light transmittance using graphene oxide nanosheets as UV-absorber. The absorbance of ultraviolet light at 300 nm can be up to 97.5%, while the transmittance of visible light at 500 nm keeps 40% plus. This hybrid film can protect protein from UVA light induced photosensitive damage, remarkably. PMID:26226281

  1. In situ Oxidation of Ultrathin Silver Films on Ni(111)

    SciTech Connect

    A Meyer; I Flege; S Senanayake; B Kaemena; R Rettew; F Alamgir; J Falta

    2011-12-31

    Oxidation of silver films of one- and two-monolayer thicknesses on the Ni(111) surface was investigated by low-energy electron microscopy at temperatures of 500 and 600 K. Additionally, intensity-voltage curves were measured in situ during oxidation to reveal the local film structure on a nanometer scale. At both temperatures, we find that exposure to molecular oxygen leads to the destabilization of the Ag film with subsequent relocation of the silver atoms to small few-layer-thick silver patches and concurrent evolution of NiO(111) regions. Subsequent exposure of the oxidized surface to ethylene initiates the transformation of bilayer islands back into monolayer islands, demonstrating at least partial reversibility of the silver relocation process at 600 K.

  2. The physical and chemical properties of ultrathin oxide films.

    PubMed

    Street, S C; Xu, C; Goodman, D W

    1997-01-01

    Thin oxide films (from one to tens of monolayers) of SiO2, MgO, NiO, Al2O3, FexOy, and TiO2 supported on refractory metal substrates have been prepared by depositing the oxide metal precursor in a background of oxygen (ca 1 x 10(-5) Torr). The thinness of these oxide samples facilitates investigation by an array of surface techniques, many of which are precluded when applied to the corresponding bulk oxide. Layered and mixed binary oxides have been prepared by sequential synthesis of dissimilar oxide layers or co-deposition of two different oxides. Recent work has shown that the underlying oxide substrate can markedly influence the electronic and chemical properties of the overlayer oxide. The structural, electronic, and chemical properties of these ultrathin oxide films have been probed using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (ELS), ion-scattering spectroscopy (ISS), high-resolution electron energy loss spectroscopy (HREELS), infrared reflectance absorption spectroscopy (IRAS), temperature-programmed desorption (TPD), scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS).

  3. Investigation of solution-processed bismuth-niobium-oxide films

    SciTech Connect

    Inoue, Satoshi; Ariga, Tomoki; Matsumoto, Shin; Onoue, Masatoshi; Miyasako, Takaaki; Tokumitsu, Eisuke; Shimoda, Tatsuya; Chinone, Norimichi; Cho, Yasuo

    2014-10-21

    The characteristics of bismuth-niobium-oxide (BNO) films prepared using a solution process were investigated. The BNO film annealed at 550°C involving three phases: an amorphous phase, Bi₃NbO₇ fluorite microcrystals, and Nb-rich cubic pyrochlore microcrystals. The cubic pyrochlore structure, which was the main phase in this film, has not previously been reported in BNO films. The relative dielectric constant of the BNO film was approximately 140, which is much higher than that of a corresponding film prepared using a conventional vacuum sputtering process. Notably, the cubic pyrochlore microcrystals disappeared with increasing annealing temperature and were replaced with triclinic β-BiNbO₄ crystals at 590°C. The relative dielectric constant also decreased with increasing annealing temperature. Therefore, the high relative dielectric constant of the BNO film annealed at 550°C is thought to result from the BNO cubic pyrochlore structure. In addition, the BNO films annealed at 500°C contained approximately 6.5 atm.% carbon, which was lost at approximately 550°C. This result suggests that the carbon in the BNO film played an important role in the formation of the cubic pyrochlore structure.

  4. Metal-organic chemical vapor deposition of cerium oxide, gallium-indium-oxide, and magnesium oxide thin films: Precursor design, film growth, and film characterization

    NASA Astrophysics Data System (ADS)

    Edleman, Nikki Lynn

    A new class of volatile, low-melting, fluorine-free lanthanide metal-organic chemical vapor deposition (MOCVD) precursors has been developed. The neutral, monomeric cerium, neodymium, gadolinium, and erbium complexes are coordinatively saturated by a versatile, multidentate, ether-functionalized beta-ketoiminate ligand, and complex melting point and volatility characteristics can be tuned by altering the alkyl substituents on the ligand periphery. Direct comparison with lanthanide beta-diketonate complexes reveals that the present precursor class is a superior choice for lanthanide oxide MOCVD. Epitaxial CeO 2 buffer layer films have been grown on (001) YSZ substrates by MOCVD at significantly lower temperatures than previously reported using one of the newly developed cerium precursors. High-quality YBCO films grown on these CeO2 buffer layers by POMBE exhibit very good electrical transport properties. The cerium complex has therefore been explicitly demonstrated to be a stable and volatile precursor and is attractive for low-temperature growth of coated conductor multilayer structures by MOCVD. Gallium-indium-oxide thin films (GaxIn2-xO 3), x = 0.0˜1.1, have been grown by MOCVD using the volatile metal-organic precursors In(dpm)3 and Ga(dpm)3. The films have a homogeneously Ga-substituted, cubic In2O3 microstructure randomly oriented on quartz or heteroepitaxial on (100) YSZ single-crystal substrates. The highest conductivity of the as-grown films is found at x = 0.12. The optical transmission window and absolute transparency of the films rivals or exceeds that of the most transparent conductive oxides known. Reductive annealing results in improved charge transport characteristics with little loss of optical transparency. No significant difference in electrical properties is observed between randomly oriented and heteroepitaxial films, thus arguing that carrier scattering effects at high-angle grain boundaries play a minor role in the film conductivity mechanism

  5. Chemical fabrication of superconducting Y-Ba-Cu oxide films

    NASA Astrophysics Data System (ADS)

    Hussain, A. A.; Sayer, M.

    1992-02-01

    High-Tc superconducting films of Y-Ba-Cu oxide were prepared on 100-plane MgO substrates by a sol-gel method. A procedure is described for preparing a superconducting film using acetate compounds dissolved in salicylic or lactic acids in the presence of ethylene glycol. This solution has superior qualities in terms of homogeneity, viscosity, and stability against atmospheric hydration. The results indicate that the nature of the solvent influences the microstructure and superconducting properties of Y-Ba-Cu-O films. X-ray diffraction analysis reveals that the annealed films are textured and had orthorhombic orientation. A correlation between the crystal structure and the superconducting properties of the Y-Ba-Cu-O films is presented.

  6. Large and pristine films of reduced graphene oxide

    PubMed Central

    Ahn, Sung Il; Kim, Kukjoo; Jung, Jura; Choi, Kyung Cheol

    2015-01-01

    A new self-assembly concept is introduced to form large and pristine films (15 cm in diameter) of reduced graphene oxide (RGO). The resulting film has different degrees of polarity on its two different sides due to the characteristic nature of the self-assembly process. The RGO film can be easily transferred from a glass substrate onto water and a polymer substrate after injection of water molecules between the RGO film and glass substrate using an electric steamer. The RGO film can also be easily patterned into various shapes with a resolution of around ±10 μm by a simple taping method, which is suitable for mass production of printed electronics at low cost. PMID:26689267

  7. Mechanisms of polarization switching in graphene oxides and poly(vinylidene fluoride)-graphene oxide films

    NASA Astrophysics Data System (ADS)

    Jiang, Zhiyuan; Zheng, Guangping; Zhan, Ke; Han, Zhuo; Wang, Hao

    2016-04-01

    Polarization switching in graphene oxides (GOs) and poly(vinylidene fluoride) (PVDF)-GO nanocomposite is investigated by piezoelectric force microscopy (PFM). The dynamical switching results reveal that GO films exhibit ferroelectric and piezoelectric properties with two-dimensional characteristics. Abnormal polarization switching is observed in PVDF-GO films, which is promising for electronic applications.

  8. Comparison of topotactic fluorination methods for complex oxide films

    SciTech Connect

    Moon, E. J. Choquette, A. K.; Huon, A.; Kulesa, S. Z.; May, S. J.; Barbash, D.

    2015-06-01

    We have investigated the synthesis of SrFeO{sub 3−α}F{sub γ} (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO{sub 2.5} films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  9. Peculiarities of jumping electroconductivity in bismuth oxide films

    NASA Astrophysics Data System (ADS)

    Vidadi, Yu. A.; Guseinov, Ya. Yu.; Bagiev, V. E.; Rafiev, T. Yu.

    1991-11-01

    The electrical properties of bismuth oxide films with direct and alternating current have been studied. A charge carrier transfer is shown to be dominant in these films both at low temperatures and at high frequencies due to the carrier jumps between the localized states with the energy near the Fermi level N( EF). The value of N( EF) at the localization radius α -1 = 8Å, the angular coefficient in Mott's law for jumping conductivity B = 93 K {1}/{4} and the average length of jumping at 230 K, R = 70 Å, have been calculated by two independent methods for τ-Bi 2O 3 films.

  10. Surface and sub-surface thermal oxidation of thin ruthenium films

    SciTech Connect

    Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F.; Kokke, S.; Zoethout, E.

    2014-09-29

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  11. Passivation of thin film oxide superconductors

    SciTech Connect

    Josefowicz, J.Y.; Rensch, D.B.; Nieh, K.W.

    1992-05-19

    This patent describes a passivation coating for oxide superconductors. It comprises a first layer of a Group II oxide encapsulating the oxide superconductor, the Group II having a substantially amorphous structure and having a thickness ranging from about 500 {Angstrom} to 2 {mu}m; and a second layer of a polymer covering the Group II oxide, the polymer comprising a composition selected from the group consisting of polyimide, polybenzyl methacrylate, polybutyl methacrylate, polybutyl styrene, polybutadiene, styrenes, polyamide resins, polyacrylics, polyacrylamides, polystyrenes, polyethylene, polyisoprene, polymethyl pentenes, polymethyl methacrylates, and polyvinyls.

  12. Combinatorial measurements of Hall effect and resistivity in oxide films.

    PubMed

    Clayhold, J A; Kerns, B M; Schroer, M D; Rench, D W; Logvenov, G; Bollinger, A T; Bozovic, I

    2008-03-01

    A system for the simultaneous measurement of the Hall effect in 31 different locations as well as the measurement of the resistivity in 30 different locations on a single oxide thin film grown with a composition gradient is described. Considerations for designing and operating a high-throughput system for characterizing highly conductive oxides with Hall coefficients as small as 10(-10) m3/C are discussed. Results from measurements on films grown using combinatorial molecular beam epitaxy show the usefulness of characterizing combinatorial libraries via both the resistivity and the Hall effect. PMID:18377026

  13. Plasmon polaritons in conducting-metal-oxide films

    NASA Astrophysics Data System (ADS)

    Efremenko, A.; Rhodes, C.; Cerutti, M.; Losego, M.; Aspnes, D. E.; Maria, J.-P.; Franzen, S.

    2008-10-01

    We report the evolution with thickness of p-polarized reflectance spectra of indium tin oxide (ITO) films deposited on BK-7 glass. ITO is one of the most common examples of the class of conducting metal oxides. Due to the low charge carrier density, ˜10-21/cm^3, the spectral features of the plasmon are observed in the near infrared. The spectra are dominated by two plasmon polariton structures, which we show are associated with the screened bulk plasmon (SBP) for very thin films and the surface plasmon for thick films. The conductor skin depth is the cut-off between the thin and thick film behavior. Remarkably, all features of these complex spectra are accurately described using only the three-phase model and the Drude free-electron representation of the dielectric function of the films. This first observation of the SBP is made possible by the unique features of these films, which include continuity for even the thinnest films and an absence of complications from bulk absorption in the spectral region of interest. The observation of the SBP is possible due to the fact that ITO behaves as a free electron conductor. Specifically, ITO has no band-to-band transitions that would obscure the intrinsic screed bulk plasmons.

  14. Characterization of reliability of printed indium tin oxide thin films.

    PubMed

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo

    2013-11-01

    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments. PMID:24245331

  15. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    SciTech Connect

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-02-04

    Tungsten oxide (WO{sub x}) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 Multiplication-Sign 10{sup -4} S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO{sub x}-based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 Multiplication-Sign 10{sup 6}, a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm{sup 2}/V s was realized. Our results demonstrated that WO{sub x}-based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  16. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    NASA Astrophysics Data System (ADS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-02-01

    Tungsten oxide (WOx) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10-4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WOx-based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 106, a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm2/V s was realized. Our results demonstrated that WOx-based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  17. Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

    DOEpatents

    Zhang, Ji-Guang; Tracy, C. Edwin; Benson, David K.; Turner, John A.; Liu, Ping

    2000-01-01

    A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

  18. Oxidized film structure and method of making epitaxial metal oxide structure

    DOEpatents

    Gan, Shupan [Richland, WA; Liang, Yong [Richland, WA

    2003-02-25

    A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

  19. Ambient-Temperature Sputtering Of Composite Oxide Films

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita

    1992-01-01

    Technique for deposition of homogeneous films of multicomponent oxides on substrates at ambient temperature based on sequential sputter deposition of individual metal components, as alternating ultra-thin layers, from multiple targets. Substrates rotated over sputtering targets of lead, zirconium, and titanium. Dc-magnetron sputtering of constituent metals in reactive ambient of argon and oxygen leads to formation of the respective metal oxides intermixed on extremely fine scale in desired composition. Compatible with low-temperature microelectronic processing.

  20. Manganese oxide nanowires, films, and membranes and methods of making

    DOEpatents

    Suib, Steven Lawrence; Yuan, Jikang

    2011-02-15

    Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves and methods of making the same are disclosed. A method for forming nanowires includes hydrothermally treating a chemical precursor composition in a hydrothermal treating solvent to form the nanowires, wherein the chemical precursor composition comprises a source of manganese cations and a source of counter cations, and wherein the nanowires comprise ordered porous manganese oxide-based octahedral molecular sieves.

  1. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    SciTech Connect

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M. ); Schultz, J.A. ); Schmidt, H.K. ); Chang, R.P.H. . Dept. of Materials Science)

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 [Angstrom]), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 [Angstrom] of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films.

  2. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    SciTech Connect

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-11-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 {Angstrom}), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 {Angstrom} of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films.

  3. Growth of ultrathin vanadium oxide films on Ag(100)

    NASA Astrophysics Data System (ADS)

    Nakamura, Takuya; Sugizaki, Yuichi; Ishida, Shuhei; Edamoto, Kazuyuki; Ozawa, Kenichi

    2016-07-01

    Vanadium oxide films were grown on Ag(100) by vanadium deposition in O2 and subsequent annealing at 450 °C. It was found that at least three types of ordered V oxide films, which showed (1 × 1), hexagonal, and (4 × 1) LEED patterns, were formed on Ag(100) depending on the O2 pressure during deposition and conditions during postannealing. The films with the hexagonal and (1 × 1) periodicities were characterized by photoelectron spectroscopy (PES) and near-edge X-ray absorption fine structure (NEXAFS) analysis. The film with the (1 × 1) periodicity was ascribed to a VO(100) film. On the other hand, the film with the hexagonal periodicity was found to be composed of V2O3, and the analysis of the LEED pattern revealed that the lattice parameter of the hexagonal lattice is 0.50 nm, which is very close to that of corundum V2O3(0001) (0.495 nm).

  4. Electrosynthesis and characterization of lead oxide thin films

    SciTech Connect

    Mahalingam, T. . E-mail: maha51@rediffmail.com; Velumani, S.; Raja, M.; Thanikaikarasan, S.; Chu, J.P.; Wang, S.F.; Kim, Y.D.

    2007-08-15

    Lead dioxide (PbO{sub 2}) is an important oxide material used extensively as anode material in batteries and fuel cells and its study has now taken new strides beyond the wide field of battery research. In the present study, lead dioxide films were electrodeposited onto precleaned copper substrate from nitrate baths. The film composition, morphology and structure were investigated using Energy Dispersive X-ray Analysis (EDX), scanning electron microscopy and X-ray diffraction techniques. The oxidation and reduction potential regions and the mechanism of lead dioxide film formation are discussed using cyclic voltammetry studies. X-ray diffraction results revealed tetragonal [{alpha}-PbO{sub 2} + {beta}-PbO{sub 2}] structures of the films which are influenced by bath temperature and solution pH value. EDAX studies show that the films deposited at higher bath temperatures and low solution pH values are rich in lead content and low in oxygen content. The effects of bath temperature and solution pH on the morphological features of lead dioxide films are also described.

  5. Magnetic Transparent Conducting Oxide Film And Method Of Making

    DOEpatents

    Windisch, Jr., Charles F.; Exarhos, Gregory J.; Sharma, Shiv K.

    2006-03-14

    Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 O·cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450° C. in air. An increase in film resistivity was found upon substitution of other cations (e.g., Zn2+, Al3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo2O4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x<0.67, NiO forms leading to an increase in resistivity; when x>0.67, the oxide was all spinel but the increased Co content lowered the conductivity.

  6. Multiferroic oxide thin films and heterostructures

    NASA Astrophysics Data System (ADS)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  7. Multiferroic oxide thin films and heterostructures

    SciTech Connect

    Lu, Chengliang E-mail: Tao.Wu@kaust.edu.sa; Hu, Weijin; Wu, Tom E-mail: Tao.Wu@kaust.edu.sa; Tian, Yufeng

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  8. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    NASA Astrophysics Data System (ADS)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  9. Indium oxide inverse opal films synthesized by structure replication method

    NASA Astrophysics Data System (ADS)

    Amrehn, Sabrina; Berghoff, Daniel; Nikitin, Andreas; Reichelt, Matthias; Wu, Xia; Meier, Torsten; Wagner, Thorsten

    2016-04-01

    We present the synthesis of indium oxide (In2O3) inverse opal films with photonic stop bands in the visible range by a structure replication method. Artificial opal films made of poly(methyl methacrylate) (PMMA) spheres are utilized as template. The opal films are deposited via sedimentation facilitated by ultrasonication, and then impregnated by indium nitrate solution, which is thermally converted to In2O3 after drying. The quality of the resulting inverse opal film depends on many parameters; in this study the water content of the indium nitrate/PMMA composite after drying is investigated. Comparison of the reflectance spectra recorded by vis-spectroscopy with simulated data shows a good agreement between the peak position and calculated stop band positions for the inverse opals. This synthesis is less complex and highly efficient compared to most other techniques and is suitable for use in many applications.

  10. Structural transformation of nickel hydroxide films during anodic oxidation

    SciTech Connect

    Crocker, R.W.; Muller, R.H.

    1992-05-01

    The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 {endash} 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

  11. Electrical properties of films of zinc oxide nanoparticles and its hybrid with reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Madhuri, K. Priya; Bramhaiah, K.; John, Neena S.

    2016-05-01

    Free-standing films of ZnO nanoparticles (NPs) and reduced graphene oxide (rGO)-ZnO NPs hybrid are prepared at a liquid/liquid interface. The films are characterized by UV-visible spectroscopy, X-ray diffraction, scanning electron microscopy and atomic force microscopy. ZnO film consists of spherical aggregated NPs while the hybrid film contains folded sheets of rGO with embedded ZnO NPs. Electrical properties of the films and its photoresponse in presence of UV radiation are investigated using current sensing atomic force microscopy (CSAFM) at nanoscale and bulk measurements using two probe methods. Enhancement in photocurrent is observed in both cases and the current imaging reveals an inhomogeneous contribution by different ZnO grains in the film.

  12. Study of the doping of thermally evaporated zinc oxide thin films with indium and indium oxide

    NASA Astrophysics Data System (ADS)

    Palimar, Sowmya; Bangera, Kasturi V.; Shivakumar, G. K.

    2013-12-01

    The present paper reports observations made on investigations carried out to study structural, optical and electrical properties of thermally evaporated ZnO thin films and their modulations on doping with metallic indium and indium oxide separately. ZnO thin film in the undoped state is found to have a very good conductivity of 90 Ω-1 cm-1 with an excellent transmittance of up to 90 % in the visible region. After doping with metallic indium, the conductivity of the film is found to be 580 Ω-1 cm-1, whereas the conductivity of indium oxide-doped films is increased up to 3.5 × 103 Ω-1 cm-1. Further, the optical band gap of the ZnO thin film is widened from 3.26 to 3.3 eV when doped with indium oxide and with metallic indium it decreases to 3.2 eV. There is no considerable change in the transmittance of the films after doping. All undoped and doped films were amorphous in nature with smooth and flat surface without significant modifications due to doping.

  13. Development of metal oxide impregnated stilbite thick film ethanol sensor

    NASA Astrophysics Data System (ADS)

    Mahabole, M. P.; Lakhane, M. A.; Choudhari, A. L.; Khairnar, R. S.

    2016-05-01

    This paper presents the study of the sensing efficiency of Titanium oxide/ Stilbite and Copper oxide /Stilbite composites towards detection of hazardous pollutants like ethanol. Stilbite based composites are prepared by physically mixing zeolite with metal oxides namely TiO2 and CuO with weight ratios of 25:75, 50:50 and 75:25. The resulting sensor materials are characterized by X-ray diffraction and Fourier Transform Infrared Spectroscopy techniques. Composite sensors are fabricated in the form of thick film by using screen printing technique. The effect of metal oxide concentration on various ethanol sensing parameters such as operating temperature, maximum uptake capacity and response/recovery time are investigated. The results indicate that metal oxide impregnated stilbite composites have great potential as low temperature ethanol sensor.

  14. Structure and chemical properties of molybdenum oxide thin films

    SciTech Connect

    Ramana, C. V.; Atuchin, V. V.; Pokrovsky, L. D.; Becker, U.; Julien, C. M.

    2007-07-15

    Molybdenum oxide (MoO{sub 3}) exhibits interesting structural, chemical, electrical, and optical properties, which are dependent on the growth conditions and the fabrication technique. In the present work, MoO{sub 3} films were produced by pulsed-laser deposition and dc magnetron sputtering under varying conditions of growth temperature (T{sub s}) and oxygen pressure (pO{sub 2}). The effect of growth conditions on the structure and chemical properties of MoO{sub 3} films was examined using x-ray diffraction, reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, and infrared spectroscopic measurements. The analyses indicate that the microstructure of Mo oxide films is sensitive to T{sub s} and pO{sub 2}. The growth conditions were optimized to produce stoichiometric and highly textured polycrystalline MoO{sub 3} films. A comparison of the microstructure of MoO{sub 3} films grown using pulsed-laser deposition and sputtering methods is also presented.

  15. Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing

    DOEpatents

    Bates, John B.

    2003-04-29

    Systems and methods are described for fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing. A method of forming a lithium cobalt oxide film includes depositing a film of lithium cobalt oxide on a substrate; rapidly heating the film of lithium cobalt oxide to a target temperature; and maintaining the film of lithium cobalt oxide at the target temperature for a target annealing time of at most, approximately 60 minutes. The systems and methods provide advantages because they require less time to implement and are, therefore less costly than previous techniques.

  16. Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing

    DOEpatents

    Bates, John B.

    2002-01-01

    Systems and methods are described for fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing. A method of forming a lithium cobalt oxide film includes depositing a film of lithium cobalt oxide on a substrate; rapidly heating the film of lithium cobalt oxide to a target temperature; and maintaining the film of lithium cobalt oxide at the target temperature for a target annealing time of at most, approximately 60 minutes. The systems and methods provide advantages because they require less time to implement and are, therefore less costly than previous techniques.

  17. Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing

    DOEpatents

    Bates, John B.

    2003-05-13

    Systems and methods are described for fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing. A method of forming a lithium cobalt oxide film includes depositing a film of lithium cobalt oxide on a substrate; rapidly heating the film of lithium cobalt oxide to a target temperature; and maintaining the film of lithium cobalt oxide at the target temperature for a target annealing time of at most, approximately 60 minutes. The systems and methods provide advantages because they require less time to implement and are, therefore less costly than previous techniques.

  18. Photoassisted oxidation of oil films on water

    SciTech Connect

    Heller, A.; Brock, J.R.

    1991-08-01

    The objective of the project is to develop TiO{sub 2}-based photocatalysts for the solar assisted oxidative dissolution of oil slicks. In a TiO{sub 2} crystal, absorption of a photon generates an electron-hole pair. The electron reacts with surface-adsorbed oxygen, reducing it to hydrogen peroxide; the hole directly oxidizes adsorbed organic compounds, usually via an intermediate OH radical. Since the density of TiO{sub 2} (3.8g/cc for anatase, 4.3 g/cc for rutile) is greater than that of either oil or seawater, TiO{sub 2} crystals are attached to inexpensive, engineered hollow glass microspheres to ensure flotation on the oil slick surface. Portions of the microsphere surface not covered by TiO{sub 2} are made oleophilic so that the microbeads will be preferentially attracted to the oil-air interface.

  19. Investigation and characterization of oxidized cellulose and cellulose nanofiber films

    NASA Astrophysics Data System (ADS)

    Yang, Han

    Over the last two decades, a large amount of research has focused on natural cellulose fibers, since they are "green" and renewable raw materials. Recently, nanomaterials science has attracted wide attention due to the large surface area and unique properties of nanoparticles. Cellulose certainly is becoming an important material in nanomaterials science, with the increasing demand of environmentally friendly materials. In this work, a novel method of preparing cellulose nanofibers (CNF) is being presented. This method contains up to three oxidation steps: periodate, chlorite and TEMPO (2,2,6,6-tetramethylpiperidinyl-1-oxyl) oxidation. The first two oxidation steps are investigated in the first part of this work. Cellulose pulp was oxidized to various extents by a two step-oxidation with sodium periodate, followed by sodium chlorite. The oxidized products can be separated into three different fractions. The mass ratio and charge content of each fraction were determined. The morphology, size distribution and crystallinity index of each fraction were measured by AFM, DLS and XRD, respectively. In the second part of this work, CNF were prepared and modified under various conditions, including (1) the introduction of various amounts of aldehyde groups onto CNF by periodate oxidation; (2) the carboxyl groups in sodium form on CNF were converted to acid form by treated with an acid type ion-exchange resin; (3) CNF were cross-linked in two different ways by employing adipic dihydrazide (ADH) as cross-linker and water-soluble 1-ethyl-3-[3-(dimethylaminopropyl)] carbodiimide (EDC) as carboxyl-activating agent. Films were fabricated with these modified CNF suspensions by vacuum filtration. The optical, mechanical and thermo-stability properties of these films were investigated by UV-visible spectrometry, tensile test and thermogravimetric analysis (TGA). Water vapor transmission rates (WVTR) and water contact angle (WCA) of these films were also studied.

  20. Zinc oxide doped graphene oxide films for gas sensing applications

    NASA Astrophysics Data System (ADS)

    Chetna, Kumar, Shani; Garg, A.; Chowdhuri, A.; Dhingra, V.; Chaudhary, S.; Kapoor, A.

    2016-05-01

    Graphene Oxide (GO) is analogous to graphene, but presence of many functional groups makes its physical and chemical properties essentially different from those of graphene. GO is found to be a promising material for low cost fabrication of highly versatile and environment friendly gas sensors. Selectivity, reversibility and sensitivity of GO based gas sensor have been improved by hybridization with Zinc Oxide nanoparticles. The device is fabricated by spin coating of deionized water dispersed GO flakes (synthesized using traditional hummer's method) doped with Zinc Oxide on standard glass substrate. Since GO is an insulator and functional groups on GO nanosheets play vital role in adsorbing gas molecules, it is being used as an adsorber. Additionally, on being exposed to certain gases the electric and optical characteristics of GO material exhibit an alteration in behavior. For the conductivity, we use Zinc Oxide, as it displays a high sensitivity towards conduction. The effects of the compositions, structural defects and morphologies of graphene based sensing layers and the configurations of sensing devices on the performances of gas sensors were investigated by Raman Spectroscopy, X-ray diffraction(XRD) and Keithley Sourcemeter.

  1. Electrosynthesis of highly transparent cobalt oxide water oxidation catalyst films from cobalt aminopolycarboxylate complexes.

    PubMed

    Bonke, Shannon A; Wiechen, Mathias; Hocking, Rosalie K; Fang, Xi-Ya; Lupton, David W; MacFarlane, Douglas R; Spiccia, Leone

    2015-04-24

    Efficient catalysis of water oxidation represents one of the major challenges en route to efficient sunlight-driven water splitting. Cobalt oxides (CoOx ) have been widely investigated as water oxidation catalysts, although the incorporation of these materials into photoelectrochemical devices has been hindered by a lack of transparency. Herein, the electrosynthesis of transparent CoOx catalyst films is described by utilizing cobalt(II) aminopolycarboxylate complexes as precursors to the oxide. These complexes allow control over the deposition rate and morphology to enable the production of thin, catalytic CoOx films on a conductive substrate, which can be exploited in integrated photoelectrochemical devices. Notably, under a bias of 1.0 V (vs. Ag/AgCl), the film deposited from [Co(NTA)(OH2 )2 ](-) (NTA=nitrilotriacetate) decreased the transmission by only 10 % at λ=500 nm, but still generated >80 % of the water oxidation current produced by a [Co(OH2 )6 ](2+) -derived oxide film whose transmission was only 40 % at λ=500 nm.

  2. Electrosynthesis of highly transparent cobalt oxide water oxidation catalyst films from cobalt aminopolycarboxylate complexes.

    PubMed

    Bonke, Shannon A; Wiechen, Mathias; Hocking, Rosalie K; Fang, Xi-Ya; Lupton, David W; MacFarlane, Douglas R; Spiccia, Leone

    2015-04-24

    Efficient catalysis of water oxidation represents one of the major challenges en route to efficient sunlight-driven water splitting. Cobalt oxides (CoOx ) have been widely investigated as water oxidation catalysts, although the incorporation of these materials into photoelectrochemical devices has been hindered by a lack of transparency. Herein, the electrosynthesis of transparent CoOx catalyst films is described by utilizing cobalt(II) aminopolycarboxylate complexes as precursors to the oxide. These complexes allow control over the deposition rate and morphology to enable the production of thin, catalytic CoOx films on a conductive substrate, which can be exploited in integrated photoelectrochemical devices. Notably, under a bias of 1.0 V (vs. Ag/AgCl), the film deposited from [Co(NTA)(OH2 )2 ](-) (NTA=nitrilotriacetate) decreased the transmission by only 10 % at λ=500 nm, but still generated >80 % of the water oxidation current produced by a [Co(OH2 )6 ](2+) -derived oxide film whose transmission was only 40 % at λ=500 nm. PMID:25826458

  3. Formation of zinc oxide films using submicron zinc particle dispersions

    SciTech Connect

    Rajachidambaram, Meena Suhanya; Varga, Tamas; Kovarik, Libor; Sanghavi, Rahul P.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Han, Seungyeol; Chang, Chih-hung; Herman, Gregory S.

    2012-07-27

    The thermal oxidation of submicron metallic Zn particles was studied as a method to form nanostructured ZnO films. The particles used for this work were characterized by electron microscopy, x-ray diffraction and thermal analysis to evaluate the Zn-ZnO core shell structure, surface morphology, and oxidation characteristics. Significant nanostructural changes were observed for films annealed to 400 °C or higher, where nanoflakes, nanoribbons, nanoneedles and nanorods were formed as a result of stress induced fractures arising in the ZnO outer shell due to differential thermal expansion between the metallic Zn core and the ZnO shell. Mass transport occurs through these defects due to the high vapor pressure for metallic Zn at temperatures above 230 °C, whereupon the Zn vapor rapidly oxidizes in air to form the ZnO nanostructures. The Zn particles were also incorporated into zinc indium oxide precursor solutions to form thin film transistor test structures to evaluate the potential of forming nanostructured field effect sensors using simple solution processing.

  4. Pulsed organometallic beam epitaxy of complex oxide films

    SciTech Connect

    Duray, S.J.; Buchholz, D.B.; Song, S.N.; Richeson, D.S.; Ketterson, J.B.; Marks, T.J.; Chang, R.P.H. )

    1991-09-16

    We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10{sup {minus}4}--10{sup {minus}2} Torr) and low substrate temperature (600--680 {degree}C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {l brace}({ital T}{sub {ital c}} ({ital R}=0)=90.5 K) and {ital J}{sub {ital c}} (77 K, 50 K gauss)=1.1{times}10{sup 5} A/cm{sup 2}{r brace} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for {ital in} {ital situ} processing of multilayer structures (e.g., junctions).

  5. Transition of oxide film configuration and the critical stress inferred by scanning probe microscopy at nanoscale

    NASA Astrophysics Data System (ADS)

    Fang, Xufei; Li, Yan; Zhang, Changxing; Dong, Xuelin; Feng, Xue

    2016-09-01

    Scanning probe microscopy (SPM) equipped in high temperature nanoindentation instrument is adopted to in situ characterize the oxide film growth on Ni-base single crystal at nanoscale. SPM images reveal a transition of oxide film configuration that the originally flat surface roughens during oxidation. Based on the stress-diffusion coupling effect during oxidation, the stress evolution in the oxide film and the evolution of surface configuration are analyzed. A new method to infer the critical stress in the oxide film at the transition point is proposed by measuring the undulated surface wavelength based on the surface morphology obtained by SPM.

  6. Properties of nano-structured cuprous oxide thin films fabricated by thermal oxidation of copper layer

    NASA Astrophysics Data System (ADS)

    Gevorgyan, Vladimir; Reymers, Anna; Nersesyan, Manuk; Nitsche, Serge; Giorgio, Suzanne; Karapetyan, Artak; Marine, Wladimir

    2011-07-01

    Among the potential photovoltaic devices based on semiconductor oxides as active layer is cuprous oxide (Cu2O). Although the theoretical limit of Cu2O solar cell efficiency is 20%, the best efficiency obtained up to now is only 2%. This is due to a very limited amount of work devoted to this semiconductor and only during last few years this material has been investigated for solar cells applications. In this work we report our results of optical, structural and surface morphology investigations of Cu2O films prepared by thermal oxidation of copper layer. The effects of oxidation temperature and oxygen partial pressure on surface morphology and crystalline structure of Cu2O films were studied. Scanning electron microscope results have shown that Cu2O films have microcrystalline structure with grain size of about 5-15 μm. Analysis of fine structure shows typical lattice spacing of cubic Cu2O structure. X-ray investigations have shown that the films consist of single Cu2O phase without any interstitial phase and have a nano-grain structure. The grains have an average dimensions about (33-41) nm. Optical investigations have shown that the absorption edge of prepared films is due to a direct allowed transition. The value of the optical band gap is 2.08 eV.

  7. Photoassisted oxidation of oil films on water

    SciTech Connect

    Heller, A.; Brock, J.R.

    1990-10-01

    The objective of the project is to develop a method for the solar assisted oxidation of oil slicks. A semiconducting photocatalyst, titanium dioxide, is used. Upon absorbing a photon, an electron-hole pair is generated in the TiO{sub 2} microcrystal. The electron reacts with surface-adsorbed oxygen, reducing it to hydrogen peroxide; the hole directly oxidizes adsorbed organic compounds. Titanium dioxide is denser than either oil or seawater; the density of its anatase phase is 3.8 and that of its rutile phase is 4.3. In order to keep the titanium dioxide at the air/oil interface, it is attached to a low density, floating material. The particles of the latter are sufficiently small to make the system economical. Specifically, the photocatalyst particles are attached to inexpensive hollow glass microbeads of about 100{mu}m diameter. Those areas of the microbeads that are not covered by photocatalyst are made oleophilic, so that the microbeads will follow the oil slick and not migrate to either the air/water or the water/oil interface.

  8. Growth and characterization of antimony doped tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Shanthi, S.; Subramanian, C.; Ramasamy, P.

    1999-03-01

    Pure and antimony doped tin oxide thin films were deposited on glass and quartz plates by spray pyrolysis method. Structural, electrical and optical properties of these films were studied by varying the substrate temperature and antimony concentration. The best electro-optic properties obtained were, resistivity as low as 9×10 -4 Ω cm and average transmission of 80% in the visible region, at the substrate temperature of 400°C with the antimony concentration of 9 at%. While doping, change in preferred orientation was observed from [1 1 0] to [2 0 0]. The optical investigation showed that, depending upon the doping concentration, the antimony doped films had direct allowed transitions in the range 4.13-4.22 eV and indirect allowed transitions in the range 2.54-2.65 eV.

  9. Investigation of tungsten doped tin oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Yang, Jianwen; Meng, Ting; Yang, Zhao; Cui, Can; Zhang, Qun

    2015-11-01

    Tungsten doped tin oxide thin film transistors (TWO-TFTs) were fabricated by radio frequency magnetron sputtering. With TWO thin films as the channel layers, the TFTs show lower off-current and positive shift turn-on voltage than the intrinsic tin oxide TFTs, which can be explained by the reason that W doping is conducive to suppress the carrier concentration of the TWO channel layer. It is important to elect an appropriate channel thickness for improving the TFT performance. The optimum TFT performance in enhancement mode is achieved at W doping content of 2.7 at% and channel thickness of 12 nm, with the saturation mobility, turn-on voltage, subthreshold swing value and on-off current ratio of 5 cm2 V-1 s-1, 0.4 V, 0.4 V/decade and 2.4  ×  106, respectively.

  10. Manganese oxide nanowires, films, and membranes and methods of making

    DOEpatents

    Suib, Steven Lawrence; Yuan, Jikang

    2008-10-21

    Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

  11. Photocatalytic oxide films in the built environment

    NASA Astrophysics Data System (ADS)

    Österlund, Lars; Topalian, Zareh

    2014-11-01

    The possibility to increase human comfort in buildings is a powerful driving force for the introduction of new technology. Among other things our sense of comfort depends on air quality, temperature, lighting level, and the possibility of having visual contact between indoors and outdoors. Indeed there is an intimate connection between energy, comfort, and health issues in the built environment, leading to a need for intelligent building materials and green architecture. Photocatalytic materials can be applied as coatings, filters, and be embedded in building materials to provide self-cleaning, antibacterial, air cleaning, deodorizing, and water cleaning functions utilizing either solar light or artificial illumination sources - either already present in buildings, or by purposefully designed luminaries. Huge improvements in indoor comfort can thus be made, and also alleviate negative health effects associated with buildings, such as the sick-house syndrome. At the same time huge cost savings can be made by reducing maintenance costs. Photocatalytic oxides can be chemically modified by changing their acid-base surface properties, which can be used to overcome deactivation problems commonly encountered for TiO2 in air cleaning applications. In addition, the wetting properties of oxides can be tailored by surface chemical modifications and thus be made e.g. oleophobic and water repellent. Here we show results of surface acid modified TiO2 coatings on various substrates by means of photo-fixation of surface sulfate species by a method invented in our group. In particular, we show that such surface treatments of photocatalytic concrete made by mixing TiO2 nanoparticles in reactive concrete powders result in concrete surfaces with beneficial self-cleaning properties. We propose that such approaches are feasible for a number of applications in the built environment, including glass, tiles, sheet metals, plastics, etc.

  12. Oxidation Effects in Rare Earth Doped Topological Insulator Thin Films.

    PubMed

    Figueroa, A I; van der Laan, G; Harrison, S E; Cibin, G; Hesjedal, T

    2016-01-01

    The breaking of time-reversal symmetry (TRS) in topological insulators is a prerequisite for unlocking their exotic properties and for observing the quantum anomalous Hall effect (QAHE). The incorporation of dopants which exhibit magnetic long-range order is the most promising approach for TRS-breaking. REBiTe3, wherein 50% of the Bi is substitutionally replaced by a RE atom (RE = Gd, Dy, and Ho), is a predicted QAHE system. Despite the low solubility of REs in bulk crystals of a few %, highly doped thin films have been demonstrated, which are free of secondary phases and of high crystalline quality. Here we study the effects of exposure to atmosphere of rare earth-doped Bi2(Se, Te)3 thin films using x-ray absorption spectroscopy. We demonstrate that these RE dopants are all trivalent and effectively substitute for Bi(3+) in the Bi2(Se, Te)3 matrix. We find an unexpected high degree of sample oxidation for the most highly doped samples, which is not restricted to the surface of the films. In the low-doping limit, the RE-doped films mostly show surface oxidation, which can be prevented by surface passivation, encapsulation, or in-situ cleaving to recover the topological surface state. PMID:26956771

  13. Spatial atomic layer deposition of zinc oxide thin films.

    PubMed

    Illiberi, A; Roozeboom, F; Poodt, P

    2012-01-01

    Zinc oxide thin films have been deposited at high growth rates (up to ~1 nm/s) by spatial atomic layer deposition technique at atmospheric pressure. Water has been used as oxidant for diethylzinc (DEZ) at deposition temperatures between 75 and 250 °C. The electrical, structural (crystallinity and morphology), and optical properties of the films have been analyzed by using Hall, four-point probe, X-ray diffraction, scanning electron microscopy, spectrophotometry, and photoluminescence, respectively. All the films have c-axis (100) preferential orientation, good crystalline quality and high transparency (∼ 85%) in the visible range. By varying the DEZ partial pressure, the electrical properties of ZnO can be controlled, ranging from heavily n-type conductive (with 4 mOhm.cm resistivity for 250 nm thickness) to insulating. Combining the high deposition rates with a precise control of functional properties (i.e., conductivity and transparency) of the films, the industrially scalable spatial ALD technique can become a disruptive manufacturing method for the ZnO-based industry.

  14. Oxidation Effects in Rare Earth Doped Topological Insulator Thin Films

    PubMed Central

    Figueroa, A. I.; van der Laan, G.; Harrison, S. E.; Cibin, G.; Hesjedal, T.

    2016-01-01

    The breaking of time-reversal symmetry (TRS) in topological insulators is a prerequisite for unlocking their exotic properties and for observing the quantum anomalous Hall effect (QAHE). The incorporation of dopants which exhibit magnetic long-range order is the most promising approach for TRS-breaking. REBiTe3, wherein 50% of the Bi is substitutionally replaced by a RE atom (RE = Gd, Dy, and Ho), is a predicted QAHE system. Despite the low solubility of REs in bulk crystals of a few %, highly doped thin films have been demonstrated, which are free of secondary phases and of high crystalline quality. Here we study the effects of exposure to atmosphere of rare earth-doped Bi2(Se, Te)3 thin films using x-ray absorption spectroscopy. We demonstrate that these RE dopants are all trivalent and effectively substitute for Bi3+ in the Bi2(Se, Te)3 matrix. We find an unexpected high degree of sample oxidation for the most highly doped samples, which is not restricted to the surface of the films. In the low-doping limit, the RE-doped films mostly show surface oxidation, which can be prevented by surface passivation, encapsulation, or in-situ cleaving to recover the topological surface state. PMID:26956771

  15. Oxidative stability of LARC (tm)-TPI films

    NASA Technical Reports Server (NTRS)

    Hinkley, Jeffrey A.

    1992-01-01

    The oxidative aging of 50-micron-thick films of LARC-TPI was studied using conventional thermogravimetric techniques and measurements of plane-stress fracture toughness. It was shown that at high temperature, most of the toughness loss occurred very early relative to the weight loss. The difficulties of interpreting TGA results in this regime and the problems of extrapolations to long times are discussed.

  16. Hafnium carbide formation in oxygen deficient hafnium oxide thin films

    NASA Astrophysics Data System (ADS)

    Rodenbücher, C.; Hildebrandt, E.; Szot, K.; Sharath, S. U.; Kurian, J.; Komissinskiy, P.; Breuer, U.; Waser, R.; Alff, L.

    2016-06-01

    On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO2-x) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfCx) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfCx surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO2 thin films prepared and measured under identical conditions, the formation of HfCx was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

  17. Oxidation of electrodeposited black chrome selective solar absorber films

    SciTech Connect

    Holloway, P.H.; Shanker, K.; Pettit, R.B.; Sowell, R.R.

    1980-01-01

    X-ray photoelectron and Auger electron spectroscopies have been used to study the composition and oxidation of electrodeposited black chrome films. The outer layer of the film is Cr/sub 2/O/sub 3/ with the inner layer being a continuously changing mixture of Cr + Cr/sub 2/O/sub 3/. Initially, approximately 40% by volume of the film is combined as Cr/sub 2/O/sub 3/, and the volume percentage of Cr/sub 2/O/sub 3/ increases to greater than 60% after only 136 hours at 250/sup 0/C. After approximately 3600 hours at 400/sup 0/C, the volume percentage of Cr/sub 2/O/sub 3/ increased to as high as 80%. The thermal emittance decreased approximately linearly with increasing oxide content, while the solar absorptance remained constant until the percentage of Cr/sub 2/O/sub 3/ exceeded approximately 70%. Oxidation was slower when the Cr/sup +3/ concentration in the plating bath was reduced from 16 g/l to 8 g/l, and when black chrome was deposited on stainless steel rather than sulfamate nickel.

  18. Optical Characterization of Titanium-Vanadium Oxide Films

    NASA Astrophysics Data System (ADS)

    Kakiuchida, Hiroshi; Jin, Ping; Okada, Masahisa; Tazawa, Masato

    2007-02-01

    Composite thin films of titanium and vanadium oxides (TVO) with various compositions were deposited by rf magnetron sputtering. The TVO films, of which their crystalline structure, composition, and film morphology were characterized, were examined to determine the optical constants and thermochromic performance as a function of the compositional ratio. The optical constants were determined by ellipsometric analysis using a consistent model of the film structure, and it was found that optical constants at visible and near-infrared wavelengths monotonically decrease from the values of VO2 towards those of TiO2 with an increase in Ti content in the TVO. The gradual depression of thermochromic performance with an increase in Ti content was measured. The change in X-ray diffraction pattern with the compositional ratio suggests that VO2 and TiO2 in the TVO film form a solid solution, or in other words the TVO can be expressed by TixV1-xO2.

  19. Electrical properties of vanadium tungsten oxide thin films

    SciTech Connect

    Nam, Sung-Pill; Noh, Hyun-Ji; Lee, Sung-Gap; Lee, Young-Hie

    2010-03-15

    The vanadium tungsten oxide thin films deposited on Pt/Ti/SiO{sub 2}/Si substrates by RF sputtering exhibited good TCR and dielectric properties. The dependence of crystallization and electrical properties are related to the grain size of V{sub 1.85}W{sub 0.15}O{sub 5} thin films with different annealing temperatures. It was found that the dielectric properties and TCR properties of V{sub 1.85}W{sub 0.15}O{sub 5} thin films were strongly dependent upon the annealing temperature. The dielectric constants of the V{sub 1.85}W{sub 0.15}O{sub 5} thin films annealed at 400 {sup o}C were 44, with a dielectric loss of 0.83%. The TCR values of the V{sub 1.85}W{sub 0.15}O{sub 5} thin films annealed at 400 {sup o}C were about -3.45%/K.

  20. Highly Conducting Transparent Indium-Doped Zinc Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Singh, Budhi; Ghosh, Subhasis

    2014-09-01

    Highly conducting transparent indium-doped zinc oxide (IZO) thin films have been achieved by controlling different growth parameters using radio frequency magnetron sputtering. The structural, electrical, and optical properties of the IZO thin films have been investigated for varied indium content and growth temperature ( T G) in order to find out the optimum level of doping to achieve the highest conducting transparent IZO thin films. The highest mobility and carrier concentration of 11.5 cm2/V-s and 3.26 × 1020 cm-3, respectively, have been achieved in IZO doped with 2% indium. It has been shown that as T G of the 2% IZO thin films increase, more and more indium atoms are substituted into Zn sites leading to shift in (002) peaks towards higher angles which correspond to releasing the stress within the IZO thin film. The minimum resistivity of 5.3 × 10-4 Ω-cm has been achieved in 2% indium-doped IZO grown at 700°C.

  1. Electrochemical deposition of conducting ruthenium oxide films from solution

    SciTech Connect

    Anderson, D.P.; Warren, L.F.

    1984-02-01

    In the last decade, ruthenium oxide, RuO /sub x/ (x less than or equal to 2), has been used extensively as the active anode electrocatalyst constituent for Cl/sub 2/ and O/sub 2/ evolution reactions, in chlorate production, and in metal electrowinning from mixed chloride-sulfate solutions. More recently, this material has been incorporated in several light-induced water electrolysis schemes and apparently possesses the ability to inhibit CdS photocorrosion by acting as a hole scavenger. The numerous applications for this catalyst material certainly warrant further studies of its electrochemical properties on a variety of substrates, e.g., semiconductors. The lack of a simple technique for controlled deposition of ruthenium oxide onto conducting substrates prompted us to investigate an electrochemical approach to this problem. We describe here a new way to electrochemically deposit conducting films of hydrated ruthenium oxide from an aqueous solution of the benzeneruthenium (II)aqua complex. The films slowly dissolve in aqueous electrolytes upon potential cycling, yet appear to be catalytic with regards to water oxidation.

  2. Isothermal thermogravimetric analysis of soybean oil oxidation correlated to thin film micro-oxidation test methods

    Technology Transfer Automated Retrieval System (TEKTRAN)

    A method of correlation between the Thin Film Micro-Oxidation (TFMO) test with isothermal thermogravimetric analysis is reported utilizing a soybean oil system. Utilizing a kinetic model, pseudo-rate constants and “activation energy” can be calculated from weight loss data. This model accounts for o...

  3. Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors

    SciTech Connect

    Gao, Xu E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya; Mitoma, Nobuhiko; Lin, Meng-Fang; Kizu, Takio; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Nabatame, Toshihide

    2014-07-14

    Oxide thin film transistor employing copper source/drain electrodes shows a small turn on voltage and reduced hysteresis. Cross-sectional high-resolution transmission electron microscopy image confirmed the formation of ∼4 nm CuO{sub x} related interlayer. The lower bond-dissociation energy of Cu-O compared to Si-O and In-O suggests that the interlayer was formed by adsorbing oxygen molecules from surrounding environment instead of getting oxygen atoms from the semiconductor film. The formation of CuO{sub x} interlayer acting as an acceptor could suppress the carrier concentration in the transistor channel, which would be utilized to control the turn on voltage shifts in oxide thin film transistors.

  4. Magnetic transparent conducting oxide film and method of making

    DOEpatents

    Windisch, Jr., Charles F.; Exarhos, Gregory J.; Sharma, Shiv K.

    2004-07-13

    Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 .OMEGA..multidot.cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450.degree. C. in air. Films deposited on sapphire substrates exhibit a refractive index of about 1.7 and are relatively transparent in the wavelength region from 0.6 to 10.0 .mu.m. They are also magnetic. The electrical and spectroscopic properties of the oxides have been studied as a function of x=Co/(Co+Ni) ratio. An increase in film resistivity was found upon substitution of other cations (e.g., Zn.sup.2+, Al.sup.3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo.sub.2 O.sub.4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x<0.67, NiO forms leading to an increase in resistivity; when x>0.67, the oxide was all spinel but the increased Co content lowered the conductivity. The influence of cation charge state and site occupancy in the spinel structure markedly affects calculated electron band structures and contributes to a reduction of p-type conductivity, the formation of polarons, and the reduction in population of mobile charge carriers that tend to limit transmission in the infrared.

  5. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    NASA Astrophysics Data System (ADS)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  6. Chemical solution growth of ferroelectric oxide thin films and nanostructures.

    PubMed

    Bassiri-Gharb, Nazanin; Bastani, Yaser; Bernal, Ashley

    2014-04-01

    Chemical solution deposition (CSD) provides a low-cost, versatile approach for processing of thin and ultrathin ferroelectric films, as well as short and high aspect ratio ferroelectric nanostructures. This review discusses the state of the art in the processing of ferroelectric oxide thin films and nanostructures by CSD, with special emphasis on nucleation and growth phenomena. The effects of choice of precursor solution, substrate and bottom electrode stack, and thermal treatment conditions on the nucleation and growth are examined. Furthermore, methods to control ferroelectric thin film's microstructure, including phase content, texture, grain size and chemical homogeneity, are reviewed. Lastly, current CSD-based methods for processing of ferroelectric oxide nanostructures are presented with special consideration of the structural development, as well as advantages and shortcomings associated with each method. Lead zirconate-titanate, Pb(ZrxTi1-x)O3 (PZT), and barium titanate, BaTiO3 (BT), are used throughout the discussion, as specific examples for CSD processing of perovskite ferroelectrics.

  7. CSA doped polypyrrole-zinc oxide thin film sensor

    NASA Astrophysics Data System (ADS)

    Chougule, M. A.; Jundale, D. M.; Raut, B. T.; Sen, Shashwati; Patil, V. B.

    2013-02-01

    The polypyrrole-zinc oxide (PPy-ZnO) hybrid sensor doped with different weight ratios of camphor sulphonic acid (CSA) were prepared by spin coating technique. These CSA doped PPy-ZnO hybrids were characterized by field emission scanning electron microscope (FESEM) and fourier transform infrared (FTIR) which proved the formation of polypyrrole, PPy-ZnO and the interaction between polypyrrole - ZnO (PPy-ZnO) hybrid with CSA doping. The gas sensing properties of the PPy-ZnO hybrid films doped with CSA have been studied for oxidizing (NO2) as well as reducing (H2S, NH3, CH4OH and CH3OH) gases at room temperature. We demonstrate that CSA doped PPy-ZnO hybrid films are highly selective to NO2 along with high-sensitivity at low concentration (80% to 100 ppm) and better stability, which suggested that the CSA doped PPy-ZnO hybrid films are potential candidate for NO2 detection at room temperature.

  8. Chemical solution growth of ferroelectric oxide thin films and nanostructures.

    PubMed

    Bassiri-Gharb, Nazanin; Bastani, Yaser; Bernal, Ashley

    2014-04-01

    Chemical solution deposition (CSD) provides a low-cost, versatile approach for processing of thin and ultrathin ferroelectric films, as well as short and high aspect ratio ferroelectric nanostructures. This review discusses the state of the art in the processing of ferroelectric oxide thin films and nanostructures by CSD, with special emphasis on nucleation and growth phenomena. The effects of choice of precursor solution, substrate and bottom electrode stack, and thermal treatment conditions on the nucleation and growth are examined. Furthermore, methods to control ferroelectric thin film's microstructure, including phase content, texture, grain size and chemical homogeneity, are reviewed. Lastly, current CSD-based methods for processing of ferroelectric oxide nanostructures are presented with special consideration of the structural development, as well as advantages and shortcomings associated with each method. Lead zirconate-titanate, Pb(ZrxTi1-x)O3 (PZT), and barium titanate, BaTiO3 (BT), are used throughout the discussion, as specific examples for CSD processing of perovskite ferroelectrics. PMID:24121276

  9. Effect of Multiply Charged Ions on the Refractive Index of Titanium Oxide Films and an Application to Decorative Films

    NASA Astrophysics Data System (ADS)

    Suzuki, Akira

    2000-03-01

    In previous reports, higher charged ions are induced by higher voltage discharge, and harder films such as TiN, (Ti,Al)N and TiC are obtained by the higher voltage discharge method. The effect of multiply charged ions was confirmed in previous experiments. Multiply charged ions will affect physical properties other than hardness. In this study, the refractive index of titanium oxide films is investigated as a function of the discharge voltage. A high-refractive-index film is obtained by the high-voltage discharge method under various deposition conditions. The high-refractive-index film is applied to a reflection-increasing film, e.g., reflector for optical pumping of a laser beam. A reddish film can be obtained by depositing TiCN film; the film is applied to decorative goods to achieve a copper-like color. However, the reddish color of TiCN is inferior to that of films which are obtained by anodic oxidation or painting. If the reddishness of TiCN film is increased, the frequency of application to decorative goods is expected to increase. In this study, TiO2 film is applied to increase the reddishness of TiCN film for use in decorative goods. By depositing TiO2 film on TiCN, the reddishness is successfully increased from 8.4 to 34.9 with respect to the a* value which expresses red in the L* a* b* color space.

  10. Solution-Processed Indium Oxide Based Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Xu, Wangying

    Oxide thin-film transistors (TFTs) have attracted considerable attention over the past decade due to their high carrier mobility and excellent uniformity. However, most of these oxide TFTs are usually fabricated using costly vacuum-based techniques. Recently, the solution processes have been developed due to the possibility of low-cost and large-area fabrication. In this thesis, we have carried out a detailed and systematic study of solution-processed oxide thin films and TFTs. At first, we demonstrated a passivation method to overcome the water susceptibility of solution-processed InZnO TFTs by utilizing octadecylphosphonic acid (ODPA) self-assembled monolayers (SAMs). The unpassivated InZnO TFTs exhibited large hysteresis in their electrical characteristics due to the adsorbed water at the semiconductor surface. Formation of a SAM of ODPA on the top of InZnO removed water molecules weakly absorbed at the back channel and prevented water diffusion from the surroundings. Therefore the passivated devices exhibited significantly reduced hysteretic characteristics. Secondly, we developed a simple spin-coating approach for high- k dielectrics (Al2O3, ZrO2, Y 2O3 and TiO2). These materials were used as gate dielectrics for solution-processed In2O3 or InZnO TFTs. Among the high-k dielectrics, the Al2O3-based devices showed the best performance, which is attributed to the smooth dielectric/semiconductor interface and the low interface trap density besides its good insulating property. Thirdly, the formation and properties of Al2O3 thin films under various annealing temperatures were intensively studied, revealing that the sol-gel-derived Al2O3 thin film undergoes the decomposition of organic residuals and nitrate groups, as well as conversion of aluminum hydroxides to form aluminum oxide. Besides, the Al2O 3 film was used as gate dielectric for solution-processed oxide TFTs, resulting in high mobility and low operating voltage. Finally, we proposed a green route for

  11. Carbon nanotube film synthesized from ethanol and its oxidation behavior in air

    NASA Astrophysics Data System (ADS)

    Ren, Yan; Ma, Wen-Jun; Zeng, Qing-Sheng; Li, Jin-Zhu; Dong, Hai-Bo; Zhou, Wei-Ya

    2012-09-01

    In this paper, we propose an efficient way to synthesize carbon nanotube films using ferrocene and ethanol. The as-grown film is free-standing, semi-transparent, and of macro scale size. The tubes in the film are mostly single- or double-walled. The oxidation behavior of the film is studied via Raman spectroscopy, and the result indicates that the inner wall of the double-walled tube is effectively protected from oxidation by the outer wall.

  12. Structure formation upon reactive direct current magnetron sputtering of transition metal oxide films

    SciTech Connect

    Ngaruiya, J.M.; Kappertz, O.; Mohamed, S.H.; Wuttig, M.

    2004-08-02

    A comparative study of reactive direct current magnetron sputtering for different transition metal oxides reveals crystalline films at room temperature for group 4 and amorphous films for groups 5 and 6. This observation cannot be explained by the known growth laws and is attributed to the impact of energetic particles, originating from the oxidized target, on the growing film. This scenario is supported by measured target characteristics, the evolution of deposition stress of the films, and the observed backsputtering.

  13. Highly conductive grain boundaries in copper oxide thin films

    NASA Astrophysics Data System (ADS)

    Deuermeier, Jonas; Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Klein, Andreas; Fortunato, Elvira

    2016-06-01

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu2O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu2O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu2O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  14. Oxidation of rubrene thin films: an electronic structure study.

    PubMed

    Sinha, Sumona; Wang, C-H; Mukherjee, M; Mukherjee, T; Yang, Y-W

    2014-12-30

    The performances of organic semiconductor devices are crucially linked with their stability at the ambient atmosphere. The evolution of electronic structures of 20 nm thick rubrene films exposed to ambient environment with time has been studied by UV and X-ray photoemission spectroscopy (UPS and XPS), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, and density functional theory (DFT). XPS, NEXAFS data, and DFT calculated values suggest the formation of rubrene-epoxide and rubrene-endoperoxide through reaction of tetracene backbone with oxygen of ambient environment. Angle dependent XPS measurement indicates that the entire probed depth of the films reacts with oxygen by spending only about 120 min in ambient environment. The HOMO peak of pristine rubrene films almost disappears by exposure of 120 min to ambient environment. The evolution of the valence band (occupied states) and NEXAFS (unoccupied states) spectra indicates that the films become more insulating with exposure as the HOMO-LUMO gap increases on oxidation. Oxygen induced chemical reaction completely destroys the delocalized nature of the electron distribution in the tetracene backbone of rubrene. The results are relevant to the performance and reliability of rubrene based devices in the environment. PMID:25383646

  15. Surfactant-assisted ultrasonic spray pyrolysis of nickel oxide and lithium-doped nickel oxide thin films, toward electrochromic applications

    NASA Astrophysics Data System (ADS)

    Denayer, Jessica; Bister, Geoffroy; Simonis, Priscilla; Colson, Pierre; Maho, Anthony; Aubry, Philippe; Vertruyen, Bénédicte; Henrist, Catherine; Lardot, Véronique; Cambier, Francis; Cloots, Rudi

    2014-12-01

    Lithium-doped nickel oxide and undoped nickel oxide thin films have been deposited on FTO/glass substrates by a surfactant-assisted ultrasonic spray pyrolysis. The addition of polyethylene glycol in the sprayed solution has led to improved uniformity and reduced light scattering compared to films made without surfactant. Furthermore, the presence of lithium ions in NiO films has resulted in improved electrochromic performances (coloration contrast and efficiency), but with a slight decrease of the electrochromic switching kinetics.

  16. IR Ellipsometry on RF sputtered Permalloy Oxide thin films

    NASA Astrophysics Data System (ADS)

    Cui, Yubo; Geerts, Wilhelmus; Twagirayezu, Fidele; Zollner, Stefan

    2015-03-01

    Recently several electronic devices have achieved significant enhancements that have been attributed to an oxidized NiFe layer. A study on lateral spin valves, was found to have an increased magnetoresistance after leaving it exposed to air. The enhancements were attributed to the partly oxidation of a NiFe layer. Even more recently the turn on voltages of Hematite based water splitting devices was lowered to record low of .61 V with the addition of an amorphous NiFeOx layer. We investigated the optical properties of Ni80Fe20-oxide thin films that were deposited by reactive RF sputtering on quartz and Si/SiO2 substrates. Deposition was performed in an AJA Magnetron System using an Ar gas flow of 8 sccm and an oxygen gas flow of 2 sccm for different substrate temperatures (24-600 degrees Celsius). The optical properties in the visible spectrum and the film thickness were measured using a Woollam M2000 variable angle spectroscopic ellipsometer. Additional measurements were performed with a Woollam IR-VASE from 1.7 to 30 micrometer. The measurement results show the existence of a phonon peak around 382 cm-1 slightly red-shifted from the 390 cm-1 phonon peak of single crystalline NiO. XRD spectra did only reveal X-ray peaks of the rocksalt structure. This work was partly funded by National Science Foundation (DMR-1104934). Use of the facilities of the CINT at Sandia National Lab is acknowledged.

  17. Oxide Film Aging on Alloy 22 in Halide Containing Solutions

    SciTech Connect

    Rodriguez, Martin A.; Carranza, Ricardo M.; Rebak, Raul B.

    2007-07-01

    Passive and corrosion behaviors of Alloy 22 in chloride and fluoride containing solutions, changing the heat treatment of the alloy, the halide concentration and the pH of the solutions at 90 deg. C, was investigated. The study was implemented using electrochemical techniques, which included open circuit potential monitoring over time, potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) measurements carried out at open circuit and at passivity potentials. Corrosion rates obtained by EIS measurements after 24 h immersion in naturally aerated solutions were below 0.5 {mu}m/year. The corrosion rates were practically independent of solution pH, alloy heat treatment and halide ion nature and concentration. EIS low frequency resistance values increased with applied potential in the passive domain and with polarization time in pH 6 - 1 M NaCl at 90 deg. C. This effect was attributed to an increase in the oxide film thickness and oxide film aging. High frequency capacitance measurements indicated that passive oxide on Alloy 22 presented a double n-type/p-type semiconductor behavior in the passive potential range. (authors)

  18. Studies on nickel-tungsten oxide thin films

    SciTech Connect

    Usha, K. S.; Sivakumar, R.; Sanjeeviraja, C.

    2014-10-15

    Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup −1} and 1100 cm{sup −1} correspond to Ni-O vibration and the peak at 860 cm{sup −1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.

  19. High angular sensitivity thin film tin oxide sensor

    NASA Astrophysics Data System (ADS)

    Kaur, Davinder; Madaan, Divya; Sharma, V. K.; Kapoor, A.

    2016-05-01

    We present theoretical anlaysis of a thin film SnO2 (Tin Oxide) sensor for the measurement of variation in the refractive index of the bulk media. It is based on lossy mode resonance between the absorbing thin film lossy modes and the evanescent wave. Also the addition of low index dielectric matching layer between the prism and the lossy waveguiding layer future increase the angular sensitivity and produce an efficient refractive index sensor. The angular interrogation is done and obtained sensitivity is 110 degree/RIU. Theoretical analysis of the proposed sensor based on Fresnel reflection coefficients is presented. This enhanced sensitivity will further improve the monitoring of biomolecular interactions and the higher sensitivity of the proposed configurations makes it to be a much better option to be employed for biosensing applications.

  20. Hybrid films with graphene oxide and metal nanoparticles could now replace indium tin oxide.

    PubMed

    Varela-Rizo, Helena; Martín-Gullón, Ignacio; Terrones, Mauricio

    2012-06-26

    Graphene oxide (G-O), a highly oxidized sheet of sp(2)-hybridized carbon with insulating electrical properties, can be transformed into graphene if it is adequately reduced. In the past, researchers believed that reduced G-O (rG-O) could be highly conducting, but it has been shown that the presence of extended vacancies and defects within rG-O negatively affect its electrical transport. Although these observations indicated that rG-O could not be used in the fabrication of any electronic device, in this issue of ACS Nano, Ruoff's group demonstrates that rG-O can indeed be used for producing efficient transparent conducting films (TCFs) if the rG-O material is coupled with Au nanoparticles (Au-NPs) and Ag nanowires (Ag-NWs). The work further demonstrates that these hybrid films containing zero-dimensional (Au-NPs), one-dimensional (Ag-NWs), and two-dimensional (rG-O) elements exhibit high optical transmittance (e.g., 90%) and low sheet resistance (20-30 Ω/□), with values comparable to those of indium tin oxide (ITO) films. In addition, Ruoff's group notes that the presence of Ag-NWs and rG-O in the films showed antibacterial properties, thus demonstrating that it is now possible to produce flexible TCFs with bactericidal functions. The data show that smart hybrid films containing rG-O and different types of NPs and NWs could be synthesized easily and could result in smart films with unprecedented functions and applications.

  1. Vibrational spectra of CO adsorbed on oxide thin films: A tool to probe the surface defects and phase changes of oxide thin films

    SciTech Connect

    Savara, Aditya

    2014-03-15

    Thin films of iron oxide were grown on Pt(111) single crystals using cycles of physical vapor deposition of iron followed by oxidative annealing in an ultrahigh vacuum apparatus. Two procedures were utilized for film growth of ∼15–30 ML thick films, where both procedures involved sequential deposition+oxidation cycles. In procedure 1, the iron oxide film was fully grown via sequential deposition+oxidation cycles, and then the fully grown film was exposed to a CO flux equivalent to 8 × 10{sup −7} millibars, and a vibrational spectrum of adsorbed CO was obtained using infrared reflection-absorption spectroscopy. The vibrational spectra of adsorbed CO from multiple preparations using procedure 1 show changes in the film termination structure and/or chemical nature of the surface defects—some of which are correlated with another phase that forms (“phase B”), even before enough of phase B has formed to be easily detected using low energy electron diffraction (LEED). During procedure 2, CO vibrational spectra were obtained between deposition+oxidation cycles, and these spectra show that the film termination structure and/or chemical nature of the surface defects changed as a function of sequential deposition+oxidation cycles. The authors conclude that measurement of vibrational spectra of adsorbed CO on oxide thin films provides a sensitive tool to probe chemical changes of defects on the surface and can thus complement LEED techniques by probing changes not visible by LEED. Increased use of vibrational spectra of adsorbed CO on thin films would enable better comparisons between films grown with different procedures and by different groups.

  2. Stress generation in thermally grown oxide films. [oxide scale spalling from superalloy substrates

    NASA Technical Reports Server (NTRS)

    Kumnick, A. J.; Ebert, L. J.

    1981-01-01

    A three dimensional finite element analysis was conducted, using the ANSYS computer program, of the stress state in a thin oxide film thermally formed on a rectangular piece of NiCrAl alloy. The analytical results indicate a very high compressive stress in the lateral directions of the film (approximately 6200 MPa), and tensile stresses in the metal substrate that ranged from essentially zero to about 55 MPa. It was found further that the intensity of the analytically determined average stresses could be approximated reasonably well by the modification of an equation developed previously by Oxx for stresses induced into bodies by thermal gradients.

  3. Anodic Oxidation in Aluminum Electrode by Using Hydrated Amorphous Aluminum Oxide Film as Solid Electrolyte under High Electric Field.

    PubMed

    Yao, Manwen; Chen, Jianwen; Su, Zhen; Peng, Yong; Zou, Pei; Yao, Xi

    2016-05-01

    Dense and nonporous amorphous aluminum oxide (AmAO) film was deposited onto platinized silicon substrate by sol-gel and spin coating technology. The evaporated aluminum film was deposited onto the AmAO film as top electrode. The hydrated AmAO film was utilized as a solid electrolyte for anodic oxidation of the aluminum electrode (Al) film under high electric field. The hydrated AmAO film was a high efficiency electrolyte, where a 45 nm thick Al film was anodized completely on a 210 nm thick hydrated AmAO film. The current-voltage (I-V) characteristics and breakdown phenomena of a dry and hydrated 210 nm thick AmAO film with a 150 nm thick Al electrode pad were studied in this work. Breakdown voltage of the dry and hydrated 210 nm thick AmAO film were 85 ± 3 V (405 ± 14 MV m(-1)) and 160 ± 5 V (762 ± 24 MV m(-1)), respectively. The breakdown voltage of the hydrated AmAO film increased about twice, owing to the self-healing behavior (anodic oxidation reaction). As an intuitive phenomenon of the self-healing behavior, priority anodic oxidation phenomena was observed in a 210 nm thick hydrated AmAO film with a 65 nm thick Al electrode pad. The results suggested that self-healing behavior (anodic oxidation reaction) was occurring nearby the defect regions of the films during I-V test. It was an effective electrical self-healing method, which would be able to extend to many other simple and complex oxide dielectrics and various composite structures.

  4. High temperature nitrogen oxides sensing enabled by indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Kannan, Srinivasan

    Generation of power using fossil fuel combustion invariably results in formation of undesirable gas species (NOx, SOx, CO, CO2, etc.) at high-temperatures which are harmful to the environment. Thus, there is a continual need to develop sensitive, responsive, stable, selective, robust and low-cost sensor systems and sensor materials for combustion monitoring. This work investigates the viability of microfabricated NO x sensors based on sputtered indium oxide (In2O3) utilizing microhotplate structures. The material becomes resistive when exposed to oxidizing gases like NOx, with its conductivity dependent upon the temperature, partial pressure of the test gas and morphological structure. We believe this device would help increase efficiency and decrease emissions through improved combustion process control, leading to a comparably economic and responsive sensor. In this work, more than 600 sensors were fabricated and tested, including RF and pulsed-DC sputtered films. About 50 unique sensor conditions were characterized and related to the gas sensor response. The sensor conditions included deposition parameters (power, pressure, time, etc.) and postdeposition processes (anneals, promoter layers, etc.). In2O3 thin films were RF sputter deposited on microhotplate structures with different thickness (40 to 300 nm) in pure Ar. Additionally, a combination of reactive and RF sputtering of In2O3 material was-deposited in Ar and O2 (10% and 25%) mixture. In2O3 films without promoter layers and with gold or TiOx promoter layers (~ 3 nm) were investigated for NOx sensing. Selectivity, stability and repeatability of indium oxide (In2O3) thin film sensor to detect NOx (25 ppm) in presence of other exhaust gas pollutants including H2, NH3 and CO2 at high operating temperatures (greater than 350 °C) was investigated in N2 carrier gas. In2O 3 films (150nm thick) deposited in Ar and O2 (25% O 2) presented the highest response (S ~ 50) to 25 ppm NOx at 500 °C when compared to films

  5. Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film

    NASA Astrophysics Data System (ADS)

    Qin, Xuesi; Li, Guojian; Xiao, Lin; Chen, Guozhen; Wang, Kai; Wang, Qiang

    2016-06-01

    Nitrogen-doped zinc oxide (N: ZnO) films have been prepared by oxidizing reactive RF magnetron-sputtering zinc nitride (Zn-N) films. The effect of oxidation temperature and oxidation time on the growth, transmittance, and electrical properties of the film has been explored. The results show that both long oxidation time and high oxidation temperature can obtain the film with a good transmittance (over 80 % for visible and infrared light) and a high carrier concentration. The N: ZnO film exhibits a special growth model with the oxidation time and is first to form a N: ZnO particle on the surface, then to become a N: ZnO layer, and followed by the inside Zn-N segregating to the surface to oxidize N: ZnO. The surface particle oxidized more adequately than the inside. However, the X-ray photoemission spectroscopy results show that the lower N concentration results in the lower N substitution in the O lattice (No). This leads to the formation of n-type N: ZnO and the decrease of carrier concentration. Thus, this method can be used to tune the microstructure, optical transmittance, and electrical properties of the N: ZnO film.

  6. Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film.

    PubMed

    Qin, Xuesi; Li, Guojian; Xiao, Lin; Chen, Guozhen; Wang, Kai; Wang, Qiang

    2016-12-01

    Nitrogen-doped zinc oxide (N: ZnO) films have been prepared by oxidizing reactive RF magnetron-sputtering zinc nitride (Zn-N) films. The effect of oxidation temperature and oxidation time on the growth, transmittance, and electrical properties of the film has been explored. The results show that both long oxidation time and high oxidation temperature can obtain the film with a good transmittance (over 80 % for visible and infrared light) and a high carrier concentration. The N: ZnO film exhibits a special growth model with the oxidation time and is first to form a N: ZnO particle on the surface, then to become a N: ZnO layer, and followed by the inside Zn-N segregating to the surface to oxidize N: ZnO. The surface particle oxidized more adequately than the inside. However, the X-ray photoemission spectroscopy results show that the lower N concentration results in the lower N substitution in the O lattice (No). This leads to the formation of n-type N: ZnO and the decrease of carrier concentration. Thus, this method can be used to tune the microstructure, optical transmittance, and electrical properties of the N: ZnO film.

  7. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    NASA Astrophysics Data System (ADS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn3O4, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20-30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 - 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9-10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  8. Deposition, stabilization and characterization of zirconium oxide and hafnium oxide thin films for high k gate dielectrics

    NASA Astrophysics Data System (ADS)

    Gao, Yong

    As the MOS devices continue to scale down in feature size, the gate oxide thickness is approaching the nanometer node. High leakage current densities caused by tunneling is becoming a serious problem. Replacing silicon oxide with a high kappa material as the gate dielectrics is becoming very critical. In recent years, research has been focused on a few promising candidates, such as ZrO2, HfO2, Al2O3, Ta 2O5, and some silicates. However, unary metal oxides tend to crystallize at relatively low temperatures (less than 700°C). Crystallized films usually have a very small grain size and high leakage current due to the grain boundaries. The alternatives are high kappa oxides which are single crystal or amorphous. Silicates remain amorphous at high temperatures, but have some problems such as phase separation, interface reaction, and lower kappa value. In this work, we addressed the crystallization problems of zirconium oxide and hafnium oxide thin films. Both of these two thin films were deposited by DC reactive magnetron sputtering so that very dense films were deposited with little damage. A specially designed system was set up in order to have good control of the deposition process. The crystallization behavior of as-deposited amorphous ZrO2 and HfO2 films was studied. It was found that the films tended to have higher crystallization temperature when the films were thinner than a critical thickness of approximately 5 nm. However, it was still well below 900°C. The crystallization temperature was significantly increased by sandwiching the high kappa oxide layer between two silica layers. Ultra thin HfO2 films of 5nm thickness remained amorphous up to 900°C. This is the highest crystallization temperature which has been reported. The mechanisms for this effect are proposed. Electrical properties of these high kappa dielectric films were also studied. It was found that ultra thin amorphous HfO2 and ZrO 2 films had superior electrical properties to crystalline films

  9. Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon

    2016-08-01

    In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm-3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke's figure of merit (FOM) was calculated to be 1.94 × 10-3 for the ITO film and 45.02 × 10-3 Ω-1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

  10. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    DOEpatents

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  11. Growth of Ordered Ultrathin Tungsten Oxide Films on Pt(111)

    SciTech Connect

    Li, Zhenjun; Zhang, Zhenrong; Kim, Yu Kwon; Smith, R. Scott; Netzer, Falko; Kay, Bruce D.; Rousseau, Roger J.; Dohnalek, Zdenek

    2011-04-07

    Ordered tungsten oxide ultra-thin films were prepared on a Pt(111) substrate at 700 K via direct sublimation of monodispersed cyclic (WO3)3 trimers. The surface composition, structure and morphology were determined using a combination of atomically resolved imaging, ensemble-averaged surface-sensitive spectroscopies, and density functional theory (DFT). We find that half of the (WO3)3 tungsten atoms get partially reduced to the (5+) oxidation state in the first layer at the Pt(111) interface. The opening of the (WO3)3 ring leads to the formation of a tungsten oxide layer with a zig-zag chain structure with a c(4×2) periodicity. In the second layer, the (WO3)3 clusters remain intact and form an ordered (3×3) array of molecularly-bound (WO3)3. DFT calculations provide a detailed understanding of the structure, oxidation states, and the vibrational frequencies for both the c(4×2) and (3×3) overlayers.

  12. Oxidation Effect in Octahedral Hafnium Disulfide Thin Film.

    PubMed

    Chae, Sang Hoon; Jin, Youngjo; Kim, Tae Soo; Chung, Dong Seob; Na, Hyunyeong; Nam, Honggi; Kim, Hyun; Perello, David J; Jeong, Hye Yun; Ly, Thuc Hue; Lee, Young Hee

    2016-01-26

    Atomically smooth van der Waals materials are structurally stable in a monolayer and a few layers but are susceptible to oxygen-rich environments. In particular, recently emerging materials such as black phosphorus and perovskite have revealed stronger environmental sensitivity than other two-dimensional layered materials, often obscuring the interesting intrinsic electronic and optical properties. Unleashing the true potential of these materials requires oxidation-free sample preparation that protects thin flakes from air exposure. Here, we fabricated few-layer hafnium disulfide (HfS2) field effect transistors (FETs) using an integrated vacuum cluster system and study their electronic properties and stability under ambient conditions. By performing all the device fabrication and characterization procedure under an oxygen- and moisture-free environment, we found that few-layer AA-stacking HfS2-FETs display excellent field effect responses (Ion/Ioff ≈ 10(7)) with reduced hysteresis compared to the FETs prepared under ambient conditions. Oxidation of HfS2 occurs uniformly over the entire area, increasing the film thickness by 250% at a prolonged oxidation time of >120 h, while defects on the surface are the preferential initial oxidation sites. We further demonstrated that the stability of the device in air is significantly improved by passivating FETs with BN in a vacuum cluster.

  13. Temperature and pressure dependent Mott potentials and their influence on self-limiting oxide film growth

    NASA Astrophysics Data System (ADS)

    Cai, Na; Zhou, Guangwen; Müller, Kathrin; Starr, David E.

    2012-10-01

    Classic Cabrera-Mott theory stipulates that the limited oxide-film growth results from electron tunneling from the metal through the oxide film to adsorbed oxygen. This leads to an electric field across the oxide film that assists ion migration for low-temperature oxide-film growth. Here, we show that the field-driven oxide-film growth can be manipulated via the temperature and pressure of oxidation. The magnitude of the self-generated electric field depends on the oxygen surface coverage that exhibits a Langmuir isotherm behavior with changes in temperature and oxygen pressure. These observations demonstrate the ability to tune an interfacial reaction via self-adaptation to its environment.

  14. Degradation of electrochromic film of amorphous tungsten oxide after coloration

    NASA Astrophysics Data System (ADS)

    Luo, Zhongkuan

    1992-11-01

    The degradation of the electrochromic film of a-WO3 was investigated from the equilibrium state of different driving voltage and the time dependent emf was also obtained in an open or short circuit of zero volts. Based on the mechanism of activation and the principal of chemical reaction kinetics, the correct definition of electrochromic memory was made and a relation of memory was obtained. It was also found that at the initial time of natural bleaching, the change rate of proton concentration in the film was also obtained. According to the mechanism of electrochromic memory, it was indicated that in the open circuit case, the theoretical reaction of the change rate of electric potential was in good agrement with the experimental results, and furthermore, the reaction constant was determined with the experimental data. In the short circuit case, there exist two effects on degradation, the short circuit current caused by the backward emf, and the oxidation of the colored film. The experimental data shows that, in the short circuit case, the degradation strongly depends on the short circuit current and the effect of chemical reaction can be neglected.

  15. Pulsed laser deposition of nanostructured indium-tin-oxide film

    NASA Astrophysics Data System (ADS)

    Yong, Thian Kok; Nee, Chen Hon; Yap, Seong Shan; Siew, Wee Ong; Sáfran, György; Yap, Yoke Kin; Tou, Teck Yong

    2010-08-01

    Effects of O2, N2, Ar and He on the formation of micro- and nanostructured indium tin oxide (ITO) thin films were investigated in pulsed Nd:YAG laser deposition on glass substrate. For O2 and Ar, ITO resistivity of <= 4 × 10-4 Ωcm and optical transmittance of > 90% were obtained with substrate temperature of 250 °C. For N2 and He, low ITO resisitivity could be obtained but with poor optical transmittance. SEM images show nano-structured ITO thin films for all gases, where dense, larger and highly oriented, microcrystalline structures were obtained for deposition in O2 and He, as revealed from the XRD lines. EDX results indicated the inclusion of Ar and N2 at the expense of reduced tin (Sn) content. When the ITO films were applied for fabrication of organic light emitting devices (OLED), only those deposited in Ar and O2 produced comparable performance to single-layer OLED fabricated on the commercial ITO.

  16. Indium doped zinc oxide nanowire thin films for antireflection and solar absorber coating applications

    SciTech Connect

    Shaik, Ummar Pasha; Krishna, M. Ghanashyam

    2014-04-24

    Indium doped ZnO nanowire thin films were prepared by thermal oxidation of Zn-In metal bilayer films at 500°C. The ZnO:In nanowires are 20-100 nm in diameter and several tens of microns long. X-ray diffraction patterns confirm the formation of oxide and indicate that the films are polycrystalline, both in the as deposited and annealed states. The transmission which is <2% for the as deposited Zn-In films increases to >90% for the ZnO:In nanowire films. Significantly, the reflectance for the as deposited films is < 10% in the region between 200 to 1500 nm and < 2% for the nanowire films. Thus, the as deposited films can be used solar absorber coatings while the nanowire films are useful for antireflection applications. The growth of nanowires by this technique is attractive since it does not involve very high temperatures and the use of catalysts.

  17. Interfacial Shear Strength of Multilayer Graphene Oxide Films.

    PubMed

    Daly, Matthew; Cao, Changhong; Sun, Hao; Sun, Yu; Filleter, Tobin; Singh, Chandra Veer

    2016-02-23

    Graphene oxide (GO) is considered as one of the most promising layered materials with tunable physical properties and applicability in many important engineering applications. In this work, the interfacial behavior of multilayer GO films was directly investigated via GO-to-GO friction force microscopy, and the interfacial shear strength (ISS) was measured to be 5.3 ± 3.2 MPa. Based on high resolution atomic force microscopy images and the available chemical data, targeted molecular dynamics simulations were performed to evaluate the influence of functional structure, topological defects, and interlayer registry on the shear response of the GO films. Theoretical values for shear strength ranging from 17 to 132 MPa were predicted for the different structures studied, providing upper bounds for the ISS. Computational results also revealed the atomic origins of the stochastic nature of friction measurements. Specifically, the wide scatter in experimental measurements was attributed to variations in functional structure and topological defects within the sliding volume. The findings of this study provide important insight for understanding the significant differences in strength between monolayer and bulk graphene oxide materials and can be useful for engineering topological structures with tunable mechanical properties.

  18. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    SciTech Connect

    Ge, Jisheng

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  19. Superconducting Yttrium Barium Copper Oxide Thin Films and Thin Film Devices

    NASA Astrophysics Data System (ADS)

    Stamper, Anthony Kendall

    Superconducting thin films of YBa_2 Cu_3O_{7 -delta} (YBCO) have been deposited using rf diode sputtering from a single composite target. These films were deposited on silicon substrates at substrate temperatures up to 600^circC using either 100% argon or a 90% argon and 10% oxygen sputtering gas mixture. Yttria-stabilized ZrO_2 (YSZ) buffer layers were employed both for electrical isolation and to minimize the reaction between the silicon and the superconductor. The YSZ crystal structure was highly dependent on the deposition parameters and films with (111) and (100) cubic texturing were grown on oxidized silicon substrates. The composition and electrical properties of the YBCO films, which were deposited on-axis from 5 cm targets, were approximately constant over most of the 5 cm substrates when oxygen was in the sputtering gas and were reproducible. The effect of the sputtering gas pressure, the presence of 10% oxygen in the sputtering gas, the target composition, and the substrate temperature on the film composition have been studied. We demonstrated that neutral oxygen bombardment was responsible for composition differences between the target and the thin film. YBCO films deposited on in-situ heated substrates had zero-transition temperatures up to 87K with 10% to 90% transition widths of less than 5K and were c-axis oriented. Films deposited on unheated substrates required processing at higher temperatures, had zero-transition temperatures up to 85K, and were randomly oriented. Lithographic processes and contact technologies were developed for device fabrication. Using these processes, we fabricated simple YBCO microstrip structures, YBCO/Au/n-Si Schottky diodes, Pb/Ag/YBCO Josephson junctions, and Au/YSZ/YBCO multi-layer structures. After optimization of the process, we were able to fabricate high quality diodes and ohmic contacts without degrading the electrical properties of the YBCO. Finally, we fabricated flux transformer structures, with winding widths

  20. cw laser compaction of aqueous-solution-deposited metal oxide films

    NASA Astrophysics Data System (ADS)

    Exarhos, Gregory J.; Dennis, Tasshi

    1997-05-01

    Zirconium dioxide films were spin cast onto silica or silicon substrates from an aqueous solution comprised of the precursor metal nitrate and an organic complexant such as glycine. The hydrated films so derived consist of an amorphous organic phase in which the metal cations and nitrate anions are homogeneously dispersed. Heating to temperatures above 200 degrees C leads to film dehydration followed by an auto-catalyzed oxidation reaction whereby the bound nitrate oxidizes the organic matrix leaving behind an intact stoichiometric and crystalline metal oxide film. Films are characterized using AFM, XRD, and optical methods. Transformation processes in these films have been studied in detail by means of spectroscopic ellipsometry and laser induced fluorescence from films doped with a suitable rare earth probe ion such as Sm+3. In the latter case, the measured fluorescence emission spectra are used to identify the hydrated, dehydrated, amorphous and crystalline metal oxide phases which evolve during processing. These transformations also have been induced upon visible CW laser irradiation at fluences in excess of 1 MW/cm2. Under these conditions, the film dehydrates and compacts within the footprint of the incident laser beam rendering this region of the film water insoluble. Post irradiation washing of the film with water removes all vestiges of the film outside of the beam footprint suggesting a possible use of this technique for lithography applications. Films subjected to laser irradiation and post irradiation heating have been characterized with respect to thickness, phase composition, crystallite size and optical constants.

  1. Epitaxial growth of intermetallic MnPt films on oxides and large exchange bias

    DOE PAGES

    Liu, Zhiqi; Biegalski, Michael D.; Hsu, Shang-Lin; Shang, Shunli; Marker, Cassie; Liu, Jian; Li, Li; Fan, Lisha S.; Meyer, Tricia L.; Wong, Anthony T.; et al

    2015-11-05

    High-quality epitaxial growth of intermetallic MnPt films on oxides is achieved, with potential for multiferroic heterostructure applications. Antisite-stabilized spin-flipping induces ferromagnetism in MnPt films, although it is robustly antiferromagnetic in bulk. Thus, highly ordered antiferromagnetic MnPt films exhibit superiorly large exchange coupling with a ferromagnetic layer.

  2. Structural and physical properties of tin oxide thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Lin, Su-Shia; Tsai, Yung-Shiang; Bai, Kai-Ren

    2016-09-01

    Tin oxide films were deposited on glass substrates by RF magnetron sputtering. At a lower sputtering pressure, the tin oxide film comprised nanocrystalline orthorhombic SnO with a (110) orientation, greater p-type conductivity and better hydrophobicity. Increasing substrate temperature resulted in the coexistence of nanocrystalline orthorhombic SnO and tetragonal SnO2 in the deposited film, favoring hydrophilicity, changing the p-type conductivity to n-type conductivity, and reducing resistivity. As the sputtering pressure or substrate temperature increased, the tin oxide film exhibited a lower surface roughness, a larger optical energy gap, and higher optical transmission.

  3. Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Marrs, Michael

    A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

  4. Consequences of N2 gas flow variation on properties of zirconium oxide-nitride films

    NASA Astrophysics Data System (ADS)

    Jariwala, Nayan N.; Chauhan, Kamlesh V.; Pandya, Parth P.; Patel, Nicky P.; Rawal, Sushant K.

    2016-09-01

    Zirconium oxide-nitride films was prepared by RF reactive magnetron sputtering in presence of helium, oxygen and nitrogen gases. The N2 gas flow rate was varied for each consecutive run of sputtering at values of 66, 72, 78, 84, and 90 sccm respectively. Zirconium oxide-nitride films showed structural variation in evolution of various textures as detected by X-ray diffraction. It showed good transmission values above 50% for all samples. Wettability studies of zirconium oxide-nitride films was done by contact angle goniometer. All samples depict hydrophobic behaviour as all films have contact angle values above 90° and as nitrogen gas flow rate increases, the films roughness as well as contact angle increases. Tribological test is done on zirconium oxide-nitride films coated on aluminium, brass and mild steel pins, which give excellent wear resistance compared to uncoated pins.

  5. Transparent conductive oxides for thin-film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  6. Growth and Dissolution of Iron and Manganese Oxide Films

    SciTech Connect

    Scot T. Martin

    2008-12-22

    Growth and dissolution of Fe and Mn oxide films are key regulators of the fate and transport of heavy metals in the environment, especially during changing seasonal conditions of pH and dissolved oxygen. The Fe and Mn are present at much higher concentrations than the heavy metals, and, when Fe and Mn precipitate as oxide films, heavy metals surface adsorb or co-precipitate and are thus essentially immobilized. Conversely, when the Fe and Mn oxide films dissolve, the heavy metals are released to aqueous solution and are thus mobilized for transport. Therefore, understanding the dynamics and properties of Fe and Mn oxide films and thus on the uptake and release of heavy metals is critically important to any attempt to develop mechanistic, quantitative models of the fate, transport, and bioavailablity of heavy metals. A primary capability developed in our earlier work was the ability to grow manganese oxide (MnO{sub x}) films on rhodochrosite (MnCO{sub 3}) substrate in presence of dissolved oxygen under mild alkaline conditions. The morphology of the films was characterized using contact-mode atomic force microscopy. The initial growth began by heteroepitaxial nucleation. The resulting films had maximum heights of 1.5 to 2 nm as a result of thermodynamic constraints. Over the three past years, we have investigated the effects of MnO{sub x} growth on the interactions of MnCO{sub 3} with charged ions and microorganisms, as regulated by the surface electrical properties of the mineral. In 2006, we demonstrated that MnO{sub x} growth could induce interfacial repulsion and surface adhesion on the otherwise neutral MnCO{sub 3} substrate under environmental conditions. Using force-volume microscopy (FVM), we measured the interfacial and adhesive forces on a MnO{sub x}/MnCO{sub 3} surface with a negatively charged silicon nitride tip in a 10-mM NaNO3 solution at pH 7.4. The interfacial force and surface adhesion of MnOx were approximately 40 pN and 600 pN, respectively

  7. Photocatalytic degradation of triethylamine on titanium oxide thin films

    SciTech Connect

    Huang, A.; Cao, L.; Chen, J.; Spiess, F.J.; Suib, S.L.; Obee, T.N.; Hay, S.O.; Freihaut, J.D.

    1999-11-15

    Photooxidation of triethylamine (TEA) in the presence of O{sub 2}, N{sub 2}, and H{sub 2}O over titanium oxide (TiO{sub 2}) was investigated using a flat plate reactor. TEA was photocatalytically oxidized to CO{sub 2} and some by-products on TiO{sub 2} thin film catalysts. The intrinsic oxidation rate of the reaction was determined and was dependent on TEA concentration, humidity level, and light intensity. Photocatalytic deactivation was observed in these reactions. Fourier transform infrared (FTIR) and temperature-programmed desorption with a mass spectrometer as a detector (TPD-MS) were used to characterize the surface of the catalyst and study the deactivation mechanism. FTIR and TPD-MS results suggest that accumulation of carboxylic acid species, -N-N=O, and some other accumulation of carboxylic acid species, -N-N=O, and some other carbonaceous species occurred during the reaction. These by-product species or intermediates were chemisorbed on the catalyst surface. They were stable under reaction conditions and might be responsible for deactivation of TiO{sub 2} by either poisoning the active sites directly or blocking the adsorption of TEA on the catalyst surface.

  8. Carboxylate Precursor Effects on MOD Derived Metal Oxide (Nickel/Nickel Oxide ) Thin Films

    NASA Astrophysics Data System (ADS)

    Gao, Xiang

    Thin films in the (Ni/NiO) system have been widely studied because of their significant potential for use in batteries, fuel cells, solar cells, supercapacitors, magnetic devices and various sensor applications. Such films typically are deposited onto suitable substrates by electrochemical or vapor deposition methods, followed by heat treatment to develop the oxide structure. In this study, by contrast, the Ni/NiO thin films were prepared by metallo-organic decomposition (MOD) technique in order to facilitate the development of nano structure feature as well as molecular scale mixing and excellent composition control. Critical parameters that must be controlled during this deposition process to achieve high quality films include: carboxylate precursor chemistry, solution chemistry, film structure chemistry, film deposition characteristics, film structure development and pyrolysis characteristics. These crucial control parameters are, for the most areas, poorly understood for this system especially for the carboxylate precursor chemistry effects on properties of Ni/NiO thin films. The goal of this work, therefore, is to understand and design those parameters in term of precursor species, viscosity, solute concentration and solvent composition as well as film deposition and heat treatment conditions that can lead to the controlled fabrication of nano-sized, high surface area, low resistive Ni/NiO thin films on Si and metallic substrates such as stainless steels and silver. The solvent system used consisted of a unique mixture of propionic acid and amylamine, in molar ratio of 0.5--2.0, with Ni acetate as the solute precursor in the concentration range of 0.2--2 mol/l. The films were prepared by spin deposition at 3000 rpm from carboxylate solution precursors with viscosity range of 10--640 cP. Good quality nano-sized Ni/NiO thin films, in the range of 0.2--2 microm thickness, on Si or stainless steel substrates were obtained by a mixed AA/PPA solvent system in the

  9. Fabrication of Fe-Al nanoparticles by selective oxidation of Fe-Al thin films

    NASA Astrophysics Data System (ADS)

    Jang, Pyungwoo; Shin, Seungchan; Jung, Chip-Sup; Kim, Kwang-Ho; Seomoon, Kyu

    2013-04-01

    The possibility of a new technique for fabricating nanoparticles from thin films using selective oxidation in an atmosphere mixture of water vapor and hydrogen was investigated. Fe-5wt.%Al films were RF-sputtered and annealed in the atmosphere mixture at 900°C for up to 200 min, in order to oxidize aluminum selectively. Thermodynamics simulation showed that temperatures exceeding 800°C are necessary to prevent iron from being oxidized, as confirmed by the depth profile of XPS. As the annealing time increased, the morphology of the 200-nm Fe-Al films changed from the continuous to the discontinuous type; thus, particulate Fe-Al films formed after 100 min. The particulate 10- to 100-nm Fe-Al films showed super-paramagnetic behavior after the oxidation. Thus, a new technique for fabricating nanoparticles was successfully introduced using selective oxidation.

  10. Electrochromic properties of niobium oxide thin films prepared by radio-frequency magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Maruyama, Toshiro; Arai, Susumu

    1993-08-01

    Electrochromic niobium oxide thin films were prepared by a radio-frequency magnetron sputtering method. Amorphous Nb2O5 thin films deposited at radio-frequency power 100 W showed the electrochromic behavior: Reduction and oxidation of the films in 0.1 M Na2CO3+0.1 M NaHCO3 buffer solution resulted in coloration and bleaching, respectively. Coulometry indicated that the coloration efficiency was 10 cm2/C.

  11. Measurements of the optical properties of thin films of silver and silver oxide

    NASA Technical Reports Server (NTRS)

    Peters, Palmer N.; Sisk, Robert C.; Brown, Yolanda; Gregory, John C.; Nag, Pallob K.; Christl, Ligia

    1995-01-01

    The optical properties of silver films and their oxides are measured to better characterize such films for use as sensors for atomic oxygen. Good agreement between properties of measured pure silver films and reported optical constants is observed. Similar comparisons for silver oxide have not been possible because of a lack of reported constants, but self-consistencies and discrepancies in our measured results are described.

  12. On the Design of Oxide Films, Nanomaterials, and Heterostructures for Solar Water Oxidation Photoanodes

    NASA Astrophysics Data System (ADS)

    Kronawitter, Coleman Xaver

    Photoelectrochemistry and its associated technologies show unique potential to facilitate the large-scale production of solar fuels—those energy-rich chemicals obtained through conversion processes driven by solar energy, mimicking the photosynthetic process of green plants. The critical component of photoelectrochemical devices designed for this purpose is the semiconductor photoelectrode, which must be optically absorptive, chemically stable, and possess the required electronic band alignment with respect to the redox couple of the electrolyte to drive the relevant electrochemical reactions. After many decades of investigation, the primary technological obstacle remains the development of photoelectrode structures capable of efficient and stable conversion of light with visible frequencies, which is abundant in the solar spectrum. Metal oxides represent one of the few material classes that can be made photoactive and remain stable to perform the required functions. The unique range of functional properties of oxides, and especially the oxides of transition metals, relates to their associated diversity of cation oxidation states, cation electronic configurations, and crystal structures. In this dissertation, the use of metal oxide films, nanomaterials, and heterostructures in photoelectrodes enabling the solar-driven oxidation of water and generation of hydrogen fuel is examined. A range of transition- and post-transition-metal oxide material systems and nanoscale architectures is presented. The first chapters present results related to electrodes based on alpha-phase iron(III) oxide, a promising visible-light-active material widely investigated for this application. Studies of porous films fabricated by physical vapor deposition reveal the importance of structural quality, as determined by the deposition substrate temperature, on photoelectrochemical performance. Heterostructures with nanoscale feature dimensionality are explored and reviewed in a later chapter

  13. ZnO Films with Very High Haze Value for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells

    NASA Astrophysics Data System (ADS)

    Hongsingthong, Aswin; Krajangsang, Taweewat; Afdi Yunaz, Ihsanul; Miyajima, Shinsuke; Konagai, Makoto

    2010-05-01

    We successfully increased the haze value of zinc oxide (ZnO) films fabricated using metal-organic chemical vapor deposition (MOCVD) by conducting glass-substrate etching before film deposition. It was found that with increasing the glass treatment time, the surface morphology of ZnO films changed from conventional pyramid-like single texture to greater cauliflower-like multi texture. Further, the rms roughness and the haze value of the films increased remarkably. Using ZnO films with a high haze value as front transparent conductive oxide (TCO) films in hydrogenated microcrystalline silicon (µc-Si:H) solar cells, we improved the quantum efficiency of these cells particularly in the long-wavelength region.

  14. Aqueous phase deposition of dense tin oxide films with nano-structured surfaces

    SciTech Connect

    Masuda, Yoshitake Ohji, Tatsuki; Kato, Kazumi

    2014-06-01

    Dense tin oxide films were successfully fabricated in an aqueous solution. The pH of the solutions was controlled to pH 1.3 by addition of HCl. Precise control of solution condition and crystal growth allowed us to obtain dense tin oxide films. Concave–convex surface of fluorine-doped tin oxide (FTO) substrates was entirely-covered with the continuous films. The films were about 65 nm in thickness and had nano-structured surfaces. Morphology of the films was strikingly different from our previous reported nano-sheet assembled structures. The films were not removed from the substrates by strong water flow or air blow to show strong adhesion strength. The aqueous solution process can be applied to surface coating of various materials such as nano/micro-structured surfaces, particles, fibers, polymers, metals or biomaterials. - Graphical abstract: Dense tin oxide films of 65 nm were successfully fabricated in an aqueous solution. They had nano-structured surfaces. Concave-convex substrates were entirely-covered with the continuous films. - Highlights: • Dense tin oxide films of 65 nm were successfully fabricated in an aqueous solution. • They had nano-structured surfaces. • Concave–convex substrates were entirely-covered with the continuous films.

  15. Metal oxide semiconductor thin-film transistors for flexible electronics

    NASA Astrophysics Data System (ADS)

    Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

    2016-06-01

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  16. Graphene-based thin film supercapacitor with graphene oxide as dielectric spacer

    NASA Astrophysics Data System (ADS)

    Liu, Jinzhang; Galpaya, Dilini; Notarianni, Marco; Yan, Cheng; Motta, Nunzio

    2013-08-01

    Thin film supercapacitors are produced by using electrochemically exfoliated graphene (G) and wet-chemically produced graphene oxide (GO). Either G/GO/G stacked film or sole GO film are sandwiched by two Au films to make devices, where GO is the dielectric spacer. The addition of graphene film can increase the capacitance about two times, compared to the simple Au electrode. It is found that the GO film has very high dielectric constant, accounting for the high capacitance. AC measurement reveals that the relative permittivity of GO is in the order of 104 within the frequency range of 0.1-70 Hz.

  17. Fabrication and characterization of oxide-based thin film transistors, and process development for oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Lim, Wantae

    2009-12-01

    This dissertation is focused on the development of thin film transistors (TFTs) using oxide materials composed of post-transitional cations with (n-1)d 10ns0 (n≥4). The goal is to achieve high performance oxide-based TFTs fabricated at low processing temperature on either glass or flexible substrates for next generation display applications. In addition, etching mechanism and Ohmic contact formation for oxide heterostructure (ZnO/CuCrO 2) system is demonstrated. The deposition and characterization of oxide semiconductors (In 2O3-ZnO, and InGaZnO4) using a RF-magnetron sputtering system are studied. The main influence on the resistivity of the films is found to be the oxygen partial pressure in the sputtering ambient. The films remained amorphous and transparent (> 70%) at all process conditions. These films showed good transmittance at suitable conductivity for transistor fabrication. The electrical characteristics of both top- and bottom-gate type Indium Zinc Oxide (InZnO) and Indium Gallium Zinc Oxide (InGaZnO4)-based TFTs are reported. The InZnO films were favorable for depletion-mode TFTs due to their tendency to form oxygen vacancies, while enhancement-mode devices were realized with InGaZnO4 films. The InGaZnO4-based TFTs fabricated on either glass or plastic substrates at low temperature (<100°C) exhibit good electrical properties: the saturation mobility of 5--12 cm2.V-1.s-1 and threshold voltage of 0.5--2.5V. The devices are also examined as a function of aging time in order to verify long-term stability in air. The effect of gate dielectric materials on electrical properties of InGaZnO 4-based TFTs was investigated. The use of SiNx film as a gate dielectric reduces the trap density and the roughness at the channel/gate dielectric interface compared to SiO2 gate dielectric, resulting in an improvement of device parameters by reducing scattering of trapped charges at the interface. The quality of interface is shown to have large effect on TFT performance

  18. Deformation behavior of the oxide film on the surface of cold sprayed powder particle

    NASA Astrophysics Data System (ADS)

    Yin, Shuo; Wang, Xiaofang; Li, Wenya; Liao, Hanlin; Jie, Hongen

    2012-10-01

    In cold spraying, oxide-free interface is an important factor for metal-to-metal contact between powder particles and substrate, which determines the bonding strength and final coating quality. In this study, a systematic finite element analysis (FEA) is performed to examine the deformation behavior of the oxide film on an Al 6061-T6 particle surface after deposition. The simulation results show that the oxide film can be disrupted during the high velocity impact. Part of the cracked oxides remains at the interface and mainly accumulates at the central region after particle deposition. Substrate hardness, particle velocity and spray angle are found to influence the deformation behavior and final state of the oxide film. Besides, interparticle interaction is also investigated in the present work to clarify the deformation behavior of the oxide film inside the coating.

  19. Continuously Controlled Optical Band Gap in Oxide Semiconductor Thin Films.

    PubMed

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-03-01

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. Charge density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques. PMID:26836282

  20. Continuously controlled optical band gap in oxide semiconductor thin films

    DOE PAGES

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, chargemore » density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.« less

  1. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    NASA Astrophysics Data System (ADS)

    Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-01

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  2. Electrically Controlled Drug Delivery from Graphene Oxide Nanocomposite Films

    PubMed Central

    2015-01-01

    On-demand, local delivery of drug molecules to target tissues provides a means for effective drug dosing while reducing the adverse effects of systemic drug delivery. This work explores an electrically controlled drug delivery nanocomposite composed of graphene oxide (GO) deposited inside a conducting polymer scaffold. The nanocomposite is loaded with an anti-inflammatory molecule, dexamethasone, and exhibits favorable electrical properties. In response to voltage stimulation, the nanocomposite releases drug with a linear release profile and a dosage that can be adjusted by altering the magnitude of stimulation. No drug passively diffuses from the composite in the absence of stimulation. In vitro cell culture experiments demonstrate that the released drug retains its bioactivity and that no toxic byproducts leach from the film during electrical stimulation. Decreasing the size and thickness of the GO nanosheets, by means of ultrasonication treatment prior to deposition into the nanocomposite, alters the film morphology, drug load, and release profile, creating an opportunity to fine-tune the properties of the drug delivery system to meet a variety of therapeutic needs. The high level of temporal control and dosage flexibility provided by the electrically controlled GO nanocomposite drug delivery platform make it an exciting candidate for on-demand drug delivery. PMID:24428340

  3. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-06-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

  4. High dielectric constant nickel-doped titanium oxide films prepared by liquid-phase deposition

    NASA Astrophysics Data System (ADS)

    Lee, Ming-Kwei; Yen, Chih-Feng; Fan, Cho-Han

    2014-09-01

    The electrical characteristics of nickel-doped titanium oxide films prepared by liquid-phase deposition on p-type (100) silicon substrate were investigated. The aqueous solutions of ammonium hexafluorotitanate and boric acid were used as precursors for the growth of titanium oxide films and the dielectric constant is 29. The dielectric constant can be improved to 94 by nickel doping at the thermal annealing at 700 °C in nitrous oxide.

  5. Nickel oxide and molybdenum oxide thin films for infrared imaging prepared by biased target ion-beam deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yao; Saint John, David; Jackson, Tom N.; Horn, Mark W.

    2014-06-01

    Vanadium oxide (VOx) thin films have been intensively used as sensing materials for microbolometers. VOx thin films have good bolometric properties such as low resistivity, high negative temperature coefficient of resistivity (TCR) and low 1/f noise. However, the processing controllability of VOx fabrication is difficult due to the multiple valence states of vanadium. In this study, metal oxides such as nickel oxide (NiOx) and molybdenum oxide (MoOx) thin films have been investigated as possible new microbolometer sensing materials with improved process controllability. Nickel oxide and molybdenum oxide thin films were prepared by reactive sputtering of nickel and molybdenum metal targets in a biased target ion beam deposition tool. In this deposition system, the Ar+ ion energy (typically lower than 25 eV) and the target bias voltage can be independently controlled since ions are remotely generated. A residual gas analyzer (RGA) is used to precisely control the oxygen partial pressure. A real-time spectroscopic ellipsometry is used to monitor the evolution of microstructure and properties of deposited oxides during growth and post-deposition. The properties of deposited oxide thin films depend on processing parameters. The resistivity of the NiOx thin films is in the range of 0.5 to approximately 100 ohm-cm with a TCR from -2%/K to -3.3%/K, where the resistivity of MoOx is between 3 and 2000 ohm-cm with TCR from -2.1%/K to -3.2%/K. We also report on the thermal stability of these deposited oxide thin films.

  6. Interfacial development of electrophoretically deposited graphene oxide films on Al alloys

    SciTech Connect

    Jin, Sumin; Dickerson, James H.; Pham, Viet Hung; Brochu, Mathieu

    2015-07-28

    Adhesion between film and substrate is critical for electronic device and coating applications. Interfacial development between electrophoretically deposited graphene oxide films on Al 1100 and Al 5052 alloys were investigated using FT-IR and XPS depth profiling techniques. Obtained results suggest metal ion permeation from the substrates into deposited graphene oxide films. The interface between the films and the substrates were primarily composed of Al-O-C bonds from oxygenated defects on graphene oxide plane rather than expected Al-C formation. Films heat treated at 150 °C had change in microstructure and peak shifts in XPS spectra suggesting change in chemical structure of bonds between the films and the substrates.

  7. Interfacial development of electrophoretically deposited graphene oxide films on Al alloys

    DOE PAGES

    Jin, Sumin; Dickerson, James H.; Pham, Viet Hung; Brochu, Mathieu

    2015-07-28

    Adhesion between film and substrate is critical for electronic device and coating applications. Interfacial development between electrophoretically deposited graphene oxide films on Al 1100 and Al 5052 alloys were investigated using FT-IR and XPS depth profiling techniques. Obtained results suggest metal ion permeation from the substrates into deposited graphene oxide films. The interface between the films and the substrates were primarily composed of Al-O-C bonds from oxygenated defects on graphene oxide plane rather than expected Al-C formation. Films heat treated at 150 °C had change in microstructure and peak shifts in XPS spectra suggesting change in chemical structure of bondsmore » between the films and the substrates.« less

  8. Copper Oxide Substrates and Epitaxial Copper Oxide/Zinc Oxide Thin Film Heterostructures for Solar Energy Conversion

    NASA Astrophysics Data System (ADS)

    Darvish, Davis Solomon

    Future fossil fuel scarcity and environmental degradation have demonstrated the need for renewable, low-carbon sources of energy to power an increasingly industrialized world. Solar energy with its infinite supply makes it an extraordinary resource that should not go unused. However with current materials, adoption is limited by cost and so a paradigm shift must occur to get everyone on the same page embracing solar technology. Cuprous Oxide (Cu2O) is a promising earth abundant material that can be a great alternative to traditional thin-film photovoltaic materials like CIGS, CdTe, etc. We have prepared Cu 2O bulk substrates by the thermal oxidation of copper foils as well Cu2O thin films deposited via plasma-assisted Molecular Beam Epitaxy. From preliminary Hall measurements it was determined that Cu2O would need to be doped extrinsically. This was further confirmed by simulations of ZnO/Cu2O heterojunctions. A cyclic interdependence between, defect concentration, minority carrier lifetime, film thickness, and carrier concentration manifests itself a primary reason for why efficiencies greater than 4% has yet to be realized. Our growth methodology for our thin-film heterostructures allow precise control of the number of defects that incorporate into our film during both equilibrium and nonequilibrium growth. We also report process flow/device design/fabrication techniques in order to create a device. A typical device without any optimizations exhibited open-circuit voltages Voc, values in excess 500mV; nearly 18% greater than previous solid state devices.

  9. Impact of acid and oxidative modifications, single or dual, of sorghum starch on biodegradable films.

    PubMed

    Biduski, Bárbara; Silva, Francine Tavares da; Silva, Wyller Max da; Halal, Shanise Lisie de Mello El; Pinto, Vania Zanella; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2017-01-01

    The objective of this study was to evaluate the effects of acid and oxidation modifications on sorghum starch, as well as the effect of dual modification of starch on the physical, morphological, mechanical, and barrier properties of biodegradable films. The acid modification was performed with 3% lactic acid and the oxidation was performed with 1.5% active chlorine. For dual modification, the acid modification was performed first, followed by oxidation under the same conditions as above. Both films of the oxidized starches, single and dual, had increased stiffness, providing a higher tensile strength and lower elongation when compared to films based on native and single acid modified starches. However, the dual modification increased the water vapor permeability of the films without changing their solubility. The increase in sorghum starch concentration in the filmogenic solution increased the thickness, water vapor permeability, and elongation of the films. PMID:27507447

  10. Impact of acid and oxidative modifications, single or dual, of sorghum starch on biodegradable films.

    PubMed

    Biduski, Bárbara; Silva, Francine Tavares da; Silva, Wyller Max da; Halal, Shanise Lisie de Mello El; Pinto, Vania Zanella; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2017-01-01

    The objective of this study was to evaluate the effects of acid and oxidation modifications on sorghum starch, as well as the effect of dual modification of starch on the physical, morphological, mechanical, and barrier properties of biodegradable films. The acid modification was performed with 3% lactic acid and the oxidation was performed with 1.5% active chlorine. For dual modification, the acid modification was performed first, followed by oxidation under the same conditions as above. Both films of the oxidized starches, single and dual, had increased stiffness, providing a higher tensile strength and lower elongation when compared to films based on native and single acid modified starches. However, the dual modification increased the water vapor permeability of the films without changing their solubility. The increase in sorghum starch concentration in the filmogenic solution increased the thickness, water vapor permeability, and elongation of the films.

  11. Electrocatalytic oxidation of methanol on polypyrrole film modified with platinum microparticles

    SciTech Connect

    Yang, H.; Lu, T.; Xue, K.; Sun, S.; Lu, G.; Chen, S.

    1997-07-01

    The electrocatalytic oxidation of methanol on polypyrrole (PPy) film modified with platinum microparticles has been studied by means of electrochemical and in situ Fourier transform infrared techniques. The Pt microparticles, which were incorporated in the PPy film by the technique of cyclic voltammetry, were uniformly dispersed. The modified electrode exhibits significant electrocatalytic activity for the oxidation of methanol. The catalytic activities were found to be dependent on Pt loading and the thickness of the PPy film. The linearly adsorbed CO species is the only intermediate of electrochemical oxidation of methanol and can be readily oxidized at the modified electrodes. The enhanced electrocatalytic activities may be due to the uniform dispersion of Pt microparticles in the PPy film and the synergistic effects of the highly dispersed Pt microparticles and the PPy film. Finally, a reaction mechanism is suggested.

  12. Absorption of ac fields in amorphous indium-oxide films

    SciTech Connect

    Ovadyahu, Z.

    2014-08-20

    Absorption data from applied ac fields in Anderson-localized amorphous indium-oxide (In{sub x}O) films are shown to be frequency and disorder dependent. The absorption shows a roll-off at a frequency which is much lower than the electron-electron scattering rate of the material when it is in the diffusive regime. This is interpreted as evidence for discreteness of the energy spectrum of the deeply localized regime. This is consistent with recent many-body localization scenarios. As the metal-insulator transition is approached, the absorption shifts to higher frequencies. Comparing with the previously obtained results on the crystalline version of indium-oxide (In{sub 2}O{sub 3−x}) implies a considerably higher inelastic electron-phonon scattering rate in the amorphous material. The range over which the absorption versus frequency decreases may indicate that a wide distribution of localization length is a common feature in these systems.

  13. Charge Compensated (Al, N) Co-Doped Zinc Oxide (ZnO) Films for Photlelectrochemical Application

    SciTech Connect

    Shet, S.

    2012-01-01

    ZnO thin films with significantly reduced bandgaps were synthesized by doping N and co-doping Al and N at 100oC. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor co-doping could be a potential method for bandgap reduction of wide-bandgap oxide materials to improve their photoelectrochemical performance.

  14. Production of Silicon Oxide like Thin Films by the Use of Atmospheric Plasma Torch

    NASA Astrophysics Data System (ADS)

    Ozono, E. M.; Fachini, E. R.; Silva, M. L. P.; Ruchko, L. F.; Galvão, R. M. O.

    2015-03-01

    The advantages of HMDS (hexamethyldisilazane) APT-plasma films for sensor applications were explored producing films in a three-turn copper coil APT equipment. HMDS was introduced into the argon plasma at four different conditions. Additional flux of oxygen could modulate the presence of organic components in the film, the composition varying from pure inorganic oxides to organo-silane polymers. Oxygen promoted deposition rates as high as 900 nm/min on silicon, acrylic or piezoelectric quartz crystal substrates. Films with a clustered morphology and refractive index of 1.45 were obtained, mainly due to a silicon oxide structure. Raman spectroscopy and XPS data showed the presence of CHn and amorphous carbon in the inorganic matrix. The films were sensitive to the humidity of the air. The adsorptive capabilities of outstanding films were tested in a Quartz Crystal Microbalance (QCM). The results support that those films can be a useful and simple alternative for the development of sensors.

  15. Nickel oxide nanoparticles film produced by dead biomass of filamentous fungus

    PubMed Central

    Salvadori, Marcia Regina; Nascimento, Cláudio Augusto Oller; Corrêa, Benedito

    2014-01-01

    The synthesis of nickel oxide nanoparticles in film form using dead biomass of the filamentous fungus Aspergillus aculeatus as reducing agent represents an environmentally friendly nanotechnological innovation. The optimal conditions and the capacity of dead biomass to uptake and produce nanoparticles were evaluated by analyzing the biosorption of nickel by the fungus. The structural characteristics of the film-forming nickel oxide nanoparticles were analyzed by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and atomic force microscopy (AFM). These techniques showed that the nickel oxide nanoparticles had a size of about 5.89 nm and were involved in a protein matrix which probably permitted their organization in film form. The production and uptake of nickel oxide nanoparticles organized in film form by dead fungal biomass bring us closer to sustainable strategies for the biosynthesis of metal oxide nanoparticles. PMID:25228324

  16. Thin-Film Fracture During Nanoindentation of a Titanium Oxide Film–Titanium System

    SciTech Connect

    Pang, Mengzhi; Bahr, David F.

    2001-09-09

    Nanoindentation testing of the titanium oxide/titanium system with electrochemically grown oxide films exhibits permanent deformation prior to a yield excusion, indicating that the occurrence of this suddent discontinuity is predominantly controlled by oxide film cracking rather than dislocaton nucleation and multiplication. Observations of circumferential cracking also lend support to this explanation. A model has been developed to predict the mechanical response prior to oxide fracture for the case of a hard coating on a soft substrate. During loading contact, the hard coating undergoes elastic deflection which may include both bending and membrane stretching effects, while the substrate is elastoplastically deformed. The model works well for surface films thicker than 20 nm. Additionally, the maximum radial tensile stress in anodically grown titanium oxide, which is responsible for film cracking at the critical load, is approximately 15 GPa.

  17. Permeability and partitioning of ferrocene ethylene oxide and propylene oxide oligomers into electropolymerized films from acetonitrile and polyether solutions

    SciTech Connect

    Pyati, R.; Murray, R.W. )

    1994-10-27

    We report the first electrochemically-based measurements of the rates of small polymer permeation into another polymer. The small polymer permeants are ferrocene ethylene oxide oligomers containing 2, 7, and 16 units and a propylene oxide oligomer containing 3 units. Their permeation into ultrathin microelectrode-supported films of the metal complex polymer poly[Ru(vbpy)[sub 3

  18. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    SciTech Connect

    Ou-Yang, Wei E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Nabatame, Toshihide

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  19. Oxide Ceramic Films Grown on 60 Nitinol for NASA and Department of Defense Applications

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Street, Kenneth W.; Lukco, Dorothy; Cytron, Sheldon J.

    2005-01-01

    Both the NASA Glenn Research Center and the U.S. Army Research Laboratory, Development and Engineering Center (ARDEC) have worked to develop oxide ceramic films grown on 60 nitinol (60-wt% nickel and 40-wt% titanium) to decrease friction and increase wear resistance under unlubricated conditions. In general, oxide and nonoxide ceramic films have unique capabilities as mechanical-, chemical-, and thermal-barrier materials in diverse applications, including high-temperature bearings and gas bearings requiring low friction, wear resistance, and chemical stability. All oxide ceramic films grown on 60 nitinol were furnished by ARDEC, and materials and surface characterization and tribological experiments were conducted at Glenn.

  20. Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

    SciTech Connect

    Das, K. C.; Ghosh, S. P.; Tripathy, N.; Kar, J. P.; Bose, G.; Lee, T.; Myoung, J. M.

    2015-06-24

    In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 °C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

  1. Oxide-based method of making compound semiconductor films and making related electronic devices

    DOEpatents

    Kapur, Vijay K.; Basol, Bulent M.; Leidholm, Craig R.; Roe, Robert A.

    2000-01-01

    A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precursor film, and providing suitable material to said precursor film to form the compound film. The source material includes oxide-containing particles including Group IB and IIIA elements. The precursor film includes non-oxide Group IB and IIIA elements. The compound film includes a Group IB-IIIA-VIA compound. The oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the source material. Similarly, non-oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the precursor film. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.6 and less than about 1.0, or substantially greater that 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.6 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The oxide-containing particles may include a dopant, as may the compound film. Compound films including a Group IIB-IVA-VA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.

  2. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    SciTech Connect

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  3. Electrochromic characteristics of niobium-doped titanium oxide film on indium tin oxide/glass by liquid phase deposition

    NASA Astrophysics Data System (ADS)

    Lee, Ming-Kwei; Lee, Chia-Jung

    2015-10-01

    Ammonium hexafluorotitanate and boric acid aqueous solutions were used as precursors for the growth of titanium oxide films on indium tin oxide (ITO)/glass substrate. For as-grown titanium oxide film used in an electrochromic device, Li+ ions from electrolyte will be trapped to hydroxyl groups and degrade the electrochromic durability during the cyclic voltammogram characterization. For niobium doped titanium oxide film, lower growth rate from more HF incorporation from the niobium doped solution and rougher surface morphology from the formation of nanocrystals were obtained. However, niobium doping reduces hydroxyl groups and the electrochromic durability is enhanced from 5 × 103 to 1 × 104 times. The transmittance is enhanced from 37 to 51% at the wavelength of 550 nm.

  4. Chemical and optical properties of thermally evaporated manganese oxide thin films

    SciTech Connect

    Al-Kuhaili, M. F.

    2006-09-15

    Manganese oxide thin films were deposited using thermal evaporation from a tungsten boat. Films were deposited under an oxygen atmosphere, and the effects of thickness, substrate temperature, and deposition rate on their properties were investigated. The chemical properties of the films were studied using x-ray photoelectron spectroscopy and x-ray fluorescence. The optical properties were determined from normal-incidence transmittance and reflectance. Based on the chemical and optical characterizations, the optimum conditions for the deposition of the films were investigated. Subsequently, the optical properties (refractive index, extinction coefficient, and band gap) of these films were determined.

  5. Low Temperature Constrained Sintering of Cerium Gadolinium OxideFilms for Solid Oxide Fuel Cell Applications

    SciTech Connect

    Nicholas, Jason Dale

    2007-01-01

    Cerium gadolinium oxide (CGO) has been identified as an acceptable solid oxide fuel cell (SOFC) electrolyte at temperatures (500-700 C) where cheap, rigid, stainless steel interconnect substrates can be used. Unfortunately, both the high sintering temperature of pure CGO, >1200 C, and the fact that constraint during sintering often results in cracked, low density ceramic films, have complicated development of metal supported CGO SOFCs. The aim of this work was to find new sintering aids for Ce0.9Gd0.1O1.95, and to evaluate whether they could be used to produce dense, constrained Ce0.9Gd0.1O1.95 films at temperatures below 1000 C. To find the optimal sintering aid, Ce0.9Gd0.1O1.95 was doped with a variety of elements, of which lithium was found to be the most effective. Dilatometric studies indicated that by doping CGO with 3mol% lithium nitrate, it was possible to sinter pellets to a relative density of 98.5% at 800 C--a full one hundred degrees below the previous low temperature sintering record for CGO. Further, it was also found that a sintering aid's effectiveness could be explained in terms of its size, charge and high temperature mobility. A closer examination of lithium doped Ce0.9Gd0.1O1.95 indicated that lithium affects sintering by producing a Li2O-Gd2O3-CeO2 liquid at the CGO grain boundaries. Due to this liquid phase sintering, it was possible to produce dense, crack-free constrained films of CGO at the record low temperature of 950 C using cheap, colloidal spray deposition processes. This is the first time dense constrained CGO films have been produced below 1000 C and could help commercialize metal supported ceria based solid oxide fuel cells.

  6. Photocatalytic oxidation of nitric oxide with immobilized titanium dioxide films synthesized by hydrothermal method.

    PubMed

    Wu, Zhongbiao; Wang, Haiqiang; Liu, Yue; Gu, Zhuoliang

    2008-02-28

    Gas-phase photocatalytic oxidation (PCO) of nitric oxide (NO) with immobilized TiO2 films was studied in this paper. The immobilized TiO2 films were synthesized by hydrothermal method. The characterization for the physicochemical properties of catalysts prepared under different hydrothermal conditions were carried out by X-ray diffraction analysis (XRD), transmission electron microscopy (TEM), high resolution-transmission electron microscopy (HR-TEM), Brunauer-Emmett-Teller measurements (BET) and scanning electron micrograph (SEM). It was found that the PCO efficiency of the catalyst was mainly depended on the hydrothermal conditions. The optimal values of hydrothermal temperature and hydrothermal time were 200 degrees C and 24 h, respectively. Furthermore, it was also known that the photocatalytic efficiency would decrease remarkably when the calcination temperature was over than 450 degrees C. Under the optimal conditions (hydrothermal condition: 200 degrees C for 24 h; calcination temperature: 450 degrees C), the photocatalytic efficiency of catalyst could reach 60% higher than that of Degussa P25.

  7. Preparation of reduced graphene oxide/gelatin composite films with reinforced mechanical strength

    SciTech Connect

    Wang, Wenchao; Wang, Zhipeng; Liu, Yu; Li, Nan; Wang, Wei; Gao, Jianping

    2012-09-15

    Highlights: ► We used and compared different proportion of gelatin and chitosan as reducing agents. ► The mechanical properties of the films are investigated, especially the wet films. ► The cell toxicity of the composite films as biomaterial is carried out. ► The water absorption capabilities of the composite films also studied. -- Abstract: Graphene oxide (GO) was reduced by chitosan/gelatin solution and added to gelatin (Gel) to fabricate reduced graphene oxide/gelatin (RGO/Gel) films by a solvent-casting method using genipin as cross-linking agent. The structure and properties of the films were characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), thermogravimetric analysis (TGA) and UV–vis spectroscopy. The addition of RGO increased the tensile strength of the RGO/Gel films in both dry and wet states, but decreased their elongation at break. The incorperation of RGO also decreased the swelling ability of the films in water. Cell cultures were carried out in order to test the cytotoxicity of the films. The cells grew and reproduced well on the RGO/Gel films, indicating that the addition of RGO has no negative effect on the compatibility of the gelatin. Therefore, the reduced graphene oxide/gelatin composite is a promising biomaterial with excellent mechanical properties and good cell compatibility.

  8. Thin film transistors gas sensors based on reduced graphene oxide poly(3-hexylthiophene) bilayer film for nitrogen dioxide detection

    NASA Astrophysics Data System (ADS)

    Xie, Tao; Xie, Guangzhong; Zhou, Yong; Huang, Junlong; Wu, Mei; Jiang, Yadong; Tai, Huiling

    2014-10-01

    Reduced graphene oxide (RGO)/poly(3-hexylthiophene) (P3HT) bilayer films were firstly utilized as active layers in OTFT gas sensors for nitrogen dioxide (NO2) detection. The OTFT with RGO/P3HT bilayer film exhibited the typical transistor characteristics and better gas sensing properties at room temperature. The electrical parameters of OTFTs based on pure P3HT film and RGO/P3HT bilayer film were calculated. The threshold voltage of OTFT was positively shifted due to the high concentration carriers in RGO. The sensing properties of the sensor with RGO/P3HT bilayer film were also investigated. Moreover, the sensing mechanism was analyzed as well.

  9. Relationships between Film Chemistry, Structure, and Mechanical Properties in Titanium Oxide

    SciTech Connect

    Pang, Mengzhi; Eakins, Daniel E.; Norton, Murray G.; Bahr, David F.

    2001-01-01

    Titanium oxides were grown anodically to selected final potentials on grade II polycrystalline titanium under different anodization rates. XPS and RBS results show that the oxide consists of primarily TiO2 with a non-stoichiometric oxide/metal interface, with the slower growth rate associated with a thicker layer at the interface. Characterization using TEM reveals that the structure of the oxide evolves from a primarily amorphous phase to islands of crystallites in an amorphous matrix, to an entirely crystalline phase by increasing the polarization potential. Slower growth rates tend to remain crystalline at higher potentials. The mechanical strength of oxide films extracted from load-depth data by nanoindentation varies dramatically for oxide films grown by different rates at 9.4 V, and to a lesser extent at lower potentials. The variation of film strength is associated with both compositional and structural characteristics.

  10. Electrochromic properties of nano-structured nickel oxide thin film prepared by spray pyrolysis method

    NASA Astrophysics Data System (ADS)

    Lin, Sheng-Hui; Chen, Fu-Rong; Kai, Ji-Jung

    2008-01-01

    In this study, we present a simple method to improve the electrochromic properties of a nickel oxide thin film. The method involves a three-step process—(a) conducting indium tin oxide (ITO) nano-particles were first sprayed onto a conducting substrate to form a porous nano-structured ITO layer, (b) nickel oxide film was then deposited onto the nano-structured ITO layer by a spray pyrolysis technique, and (c) the substrate, ITO nano-particles layer and nickel oxide film were annealed at high temperature of 300 °C to improve adhesion of these three layers. The microstructure of the resulting electrochromic cell was investigated using scanning electron microscopy. It is evident that the nickel oxide film covers the surface of the ITO nano-particle layer and forms a nano-structured nickel oxide (NSNO) film. The switching time and contrast were characterized by Autolab PGSTAT12 potentiostat and Jasco V-570 spectrophotometer. The results suggest that the transmittance contrast and switching time of NSNO are slightly superior to those of a conventional nickel oxide (CNO) film. However, the cycling durability of NSNO can be much better than that of CNO.

  11. Deposition of Metal Oxide Films from Metal-EDTA Complexes by Flame Spray Technique

    NASA Astrophysics Data System (ADS)

    Komatsu, Keiji; Sekiya, Tetsuo; Toyama, Ayumu; Hasebe, Yasuhiro; Nakamura, Atsushi; Noguchi, Masahiro; Li, Yu; Ohshio, Shigeo; Akasaka, Hiroki; Muramatsu, Hiroyuki; Saitoh, Hidetoshi

    2014-06-01

    R2O3 (R = Y, Eu, Er) metal oxides were synthesized from metal-ethylenediaminetetraacetic acid (EDTA) complexes using a flame spray technique. As this technique enables high deposition rates, films with thickness of several tens of micrometers were obtained. Films of yttria, europia, and erbia phase were synthesized on stainless-steel substrates with reaction assistance by H2-O2 combustion gas. The oxide films consisted of the desired crystalline phase with micropores. The porosity of the films was in the range of 6-15%, varying with the metal used. These results suggest that the true density of the metal oxide obtained from metal-EDTA powder through the thermal reaction process plays an important role in achieving film with the desired porosity.

  12. Erosion of a-C:H films under interaction with nitrous oxide afterglow discharge

    NASA Astrophysics Data System (ADS)

    Zalavutdinov, R. Kh.; Gorodetsky, A. E.; Bukhovets, V. L.; Zakharov, A. P.; Mazul, I. V.

    2009-06-01

    Hydrocarbon film removal using chemically active oxygen formed in a direct current glow discharge with a hollow cathode in nitrous oxide was investigated. In the afterglow region sufficiently fast removal of a-C:H films about 500 nm thick during about 8 h was achieved at N 2O pressure of 12 Pa and 370 K. The erosion rate in the afterglow region was directly proportional to the initial pressure and increased two orders of magnitude at temperature rising from 300 to 500 K. The products of a-C:H film plasmolysis were CO, CO 2, H 2O, and H 2. After removal of a-C:H films previously deposited on stainless steel, molybdenum or tungsten 3-30 nm thick oxide films were formed on the substrates. Reactions of oxygen ion neutralization and atomic oxygen recombination suppressed further oxidation of the materials.

  13. Electrical and optical characterization of metal oxide/metal/polymer multilayer thin films

    NASA Astrophysics Data System (ADS)

    Fryc, Irena

    1998-01-01

    A new procedure for depositing three-layer structures [doped metal oxide/metal/metal oxide (In2O3/Ag/TiO2)] on a glass substrate by applying different methods of film deposition was developed. To obtain the first film -- In2O3:Sn, the spray hydrolysis method was employed and for the second, a thin Ag film, the vacuum evaporation technique was used. The third film -- TiO2 was obtained by the organic oxide compound polymerization method. The electrical and optical properties of the films and the multilayer structure thus obtained were investigated. The studies showed that the three-layer structure could be used as a broad-band infrared filter.

  14. Cholesterol photosensitised oxidation of horse meat slices stored under different packaging films.

    PubMed

    Boselli, Emanuele; Rodriguez-Estrada, Maria Teresa; Ferioli, Federico; Caboni, Maria Fiorenza; Lercker, Giovanni

    2010-07-01

    The effect of the type of packaging film (transparent vs. light-protecting red film) was evaluated on the formation of cholesterol oxidation products (COPs) in refrigerated horse meat slices stored in retail conditions under light exposure for 8h. In meat wrapped with a transparent film, COPs increased from 233 (control) to 317 microg/g of fat, whereas the red film delayed cholesterol oxidation and offered protection against COPs formation, since COPs decreased from 173 (control) to 139 microg/g of fat after 8h of light exposure. In addition, light opened the epoxy ring and led to the formation of triol, which was actually absent at T(0.) A proper packaging film may represent a useful strategy to retard oxidative degradation in a light-sensitive, high pigment- and fat-containing food, such as horse meat.

  15. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films

    PubMed Central

    2012-01-01

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system. PMID:22221518

  16. Repassivation of titanium and surface oxide film regenerated in simulated bioliquid.

    PubMed

    Hanawa, T; Asami, K; Asaoka, K

    1998-06-15

    The change in potential during repassivation of titanium in artificial bioliquids was examined, and the regenerated surface oxide film on titanium was characterized using X-ray photoelectron spectroscopy and Auger electron spectroscopy to elucidate the repassivation reaction of titanium in a biological system. The repassivation rate in Hanks' solution was slower than that in saline and was not influenced by the pH of the solution. This indicates that more titanium ions dissolve in a biological system than hitherto was predicted when the surface film is destroyed. Phosphate ions are taken up preferentially in the surface film during regeneration, and the film consists of titanium oxide and titanium oxyhydroxide containing titanium phosphate. Calcium ions and phosphate ions are adsorbed by the film after regeneration, and calcium phosphate or calcium titanium phosphate is formed at the outermost surface. Ions constituting Hanks' solution other than calcium and phosphate were absent from the surface oxide.

  17. Quantitative analysis of oxygen content in copper oxide films using ultra microbalance

    SciTech Connect

    Shu, Yonghua; Wang, Lianhong; Liu, Chong; Fan, Jing

    2014-12-09

    Copper oxide films were prepared on quartz substrates through electron beam physical vapor deposition in a vacuum chamber, and the films were observed using X-ray diffraction (XRD) and scanning electron microscope (SEM). The oxygen content of the films were analyzed using an ultra microbalance. Results indicated that when the substrate was heated to 600°C and the oxygen flow rate was 5 sccm, the film was composed of 47% Cu and 53% Cu2O (mass percent), and the oxidation ratio of copper was 25%. After the deposition process at the same condition, i.e. the substrate at temperature of 600°C and blowed by oxygen flowrate of 5 sccm, then in-stu annealed at 600°C in low oxygen pressure of 10 Pa for 30 minutes, the film composition became 22% Cu2O and 78% CuO (mass percent), and the oxidation ratio of copper greatly increased to about 88%.

  18. Fabrication and Characterization of Rapidly Oxidized p-Type Cu2O Films from Cu Films and their Application to Heterojunction Thin-Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Kim, Hyung Soo; Lim, Jung Wook; Yun, Sun Jin; Park, Min A.; Park, Se Yong; Lee, Seong Eui; Lee, Hee Chul

    2013-10-01

    In this study, we report that the metal Cu deposited on a glass substrate is formed into a stable p-type Cu2O film with excellent properties through rapid thermal oxidation (RTO). The pre-deposited Cu film layer went through thermal oxidation in the temperature range of 200-500 °C in O2 and air ambient, and the electrical and optical properties were intensively investigated. The optimized p-type Cu2O film heat-treated at a temperature of 200 °C in an air ambient has a carrier concentration of 1.25×1017 cm-3, mobility of 0.51 cm2 V-1 s-1, and resistivity of 9.86 Ω cm; its optical band gap reaches about 2.4 eV. Using the p-type Cu2O film with i- and n-type amorphous silicon layers, heterojunction thin-film solar cells were fabricated on glass substrates. These transparent solar cells employed Ga-doped ZnO films as top and bottom electrodes. Solar cells with Cu2O film oxidized at 200 °C in an air ambient have an open circuit voltage of 0.36 V, short-circuit current of 15.2 mA/cm2, and photoelectric conversion efficiency of 1.98%.

  19. Sputtered cadmium oxide as a surface pretreatment for graphite solid-lubricant films

    NASA Technical Reports Server (NTRS)

    Fusaro, Robert L.

    1987-01-01

    Sputtered films of cadmium oxide were applied to sand blasted AISI 440C HT stainless steel disks as a surface pretreatment for the application of rubbed graphite films. Mixtures of cadmium oxide and graphite were applied to the nonpretreated sandblasted metal and evaluated. The results were compared to graphite films applied to other commercially available surface pretreatments. It is found that sputtered CdO pretreated surfaces increase the endurance lives of the graphite films and decrease the counterface steady state wear rate of the pins almost an order of magnitude compared to commercially available pretreatments. The CdO additions in general improved the tribological properties of graphite. The greatest benefit occurred when it was applied to the substrate rather than mixing it with the graphite and that sputtered films of CdO perform much better than rubbed CdO films.

  20. Sputtered cadmium oxide as a surface pretreatment for graphite solid lubricant films

    NASA Technical Reports Server (NTRS)

    Fusaro, R. L.

    1986-01-01

    Sputtered films of cadmium oxide were applied to sand blasted AISI 440C HT stainless steel disks as a surface pretreatment for the application of rubbed graphite films. Mixtures of cadmium oxide and graphite were applied to the nonpretreated sandblasted metal and evaluated. The results were compared to graphite films applied to other commercially available surface pretreatments. It is found that sputtered CdO pretreated surfaces increase the endurance lives of the graphite films and decrease the counterface steady state wear rate of the pins almost an order of magnitude compared to commercially available pretreatments. The CdO additions in general improved the tribological properties of graphite. The greatest benefit occurred when it was applied to the substrate rather than mixing it with the graphite and that sputtered films of CdO perform much better than rubbed CdO films.

  1. Fluorination of epitaxial oxides: synthesis of perovskite oxyfluoride thin films.

    PubMed

    Moon, Eun Ju; Xie, Yujun; Laird, Eric D; Keavney, David J; Li, Christopher Y; May, Steven J

    2014-02-12

    While the synthesis of ABO3 perovskite films has enabled new strategies to control the functionality of this material class, the chemistries that have been realized in thin film form constitute only a fraction of those accessible to bulk chemists. Here, we report the synthesis of oxyfluoride films, where the incorporation of F may provide a new means to tune physical properties in thin films by modifying electronic structure. Fluorination is achieved by spin coating a poly(vinylidene fluoride) (PVDF) solution onto oxygen-deficient films. The film/polymer bilayer is then annealed, promoting the diffusion of F into the film. We have used this method to synthesize SrFeO(3-α)Fγ films, as confirmed by X-ray photoemission spectroscopy and X-ray absorption spectroscopy. PMID:24443775

  2. The influence of fluoride on the physicochemical properties of anodic oxide films formed on titanium surfaces.

    PubMed

    Kong, De-Sheng

    2008-05-20

    The influence of fluoride (and its concentration) on the electrochemical and semiconducting properties of anodic oxide films formed on titanium surfaces was investigated by performing electrochemical measurements (potentiodynamic/pontiostatic polarization, open circuit potential (OCP), and capacitance measurements) for a titanium/oxide film/solution interface system in fluoride-containing 1.0 M HClO(4) solution. On the basis of the Mott-Schottky analysis, and with taking into account both the surface reactions (or, say, the specifically chemical adsorption) of fluoride ions at the oxide film surface and the migration/intercalation of fluoride ions into the oxide film, the changes in the electrochemical behavior of titanium measured in this work (e.g., the blocked anodic oxygen evolution, the increased anodic steady-state current density, the positively shifted flat band potential, and the positively shifted film breakdown potential) were interpreted by the changes in the surface and the bulk physicochemical properties (e.g., the surface charges, surface state density, doping concentration, and the interfacial potential drops) of the anodic films grown on titanium. The fluoride concentrations tested in this work can be divided into three groups according to their effect on the electrochemical behavior of the oxide films: < or =0.001 M, 0.001-0.01 M, and >0.01 M. By tracing the changes of the OCP of the passivated titanium in fluoride-containing solutions, the deleterious/depassive effect of fluoride ions on the titanium oxide films was examined and evaluated with the parameter of the film breakdown time. It was also shown that the films anodically formed on titanium at higher potentials (>2.5 V) exhibited significantly higher stability against the fluoride attack than that either formed at lower potentials (<2.5 V) or formed natively in the air.

  3. A novel method to determine the diffusion coefficient of hydrogen ion in ruthenium oxide films

    NASA Astrophysics Data System (ADS)

    Yu, George T.; Yen, S. K.

    2002-10-01

    Hydrogen ion diffusion in ruthenium oxide film is of significant interest because of its importance in capacitor, sensor and catalyst applications. In this study, a method based on potential-pH response measurement was used to determine hydrogen ion diffusion in ruthenium oxide films. The drift in the potential-pH response is believed to be due to the hydrated layer, which affects hydrogen ion diffusion onto the oxide film of the pH sensor. Hydrogen ion diffusion coefficient of ruthenium oxide films obtained from this method was 6×10 -14 cm2/ s. The unique feature of the potential-pH response method is its relatively simple experimental procedure, which eliminates complications arising from surface related effects and/or presence of hydrogen traps in membrane such as those found in the conventional permeation method.

  4. Oxide film defects in Al alloys and the formation of hydrogen- related porosity

    NASA Astrophysics Data System (ADS)

    Griffiths, W. D.; Gerrard, A. J.; Yue, Y.

    2016-03-01

    Double oxide film defects have also been held responsible for the origins of hydrogen porosity, where hydrogen dissolved in the Al melt passes into the interior atmosphere of the double oxide film defect causing it to inflate. However, this is in opposition to long- established evidence that H cannot readily diffuse through aluminium oxide. To investigate this further, samples of commercial purity Al were first degassed to remove their initial H content, and then heated to above their melting point and held in atmospheres of air and nitrogen respectively, to determine any differences in H pick-up. The experiment showed that samples held in an oxidising atmosphere, and having an oxide skin, picked up significantly less H than when the samples were held in a nitrogen atmosphere, which resulted in the formation of AlN in cracks in the oxide skin of the sample. It is suggested that double oxide film defects can give rise to hydrogen-related porosity, but this occurs more quickly when the oxygen in the original oxide film defect has been consumed by reaction with the surrounding melt and nitrogen reacts to form AlN, which is more permeable to H than alumina, more easily allowing the oxide film defect to give rise to a hydrogen pore. This is used to interpret results from an earlier synchrotron experiment, in which a small pore was seen to grow into a larger pore, while an adjacent large pore remained at a constant size.

  5. Characterization of polyaniline / metal oxide composite films for sensing ammonia

    NASA Astrophysics Data System (ADS)

    Patrick, Eddie

    Sensors are attractive because of their affordable price, compact size, the opportunity that they provide in determining various analytes (gases) under special conditions both in the laboratory and in the field. The increased concern about environmental protection has led to continuous expansion in sensor development. Ammonia is amongst a group of very toxic gases that can cause harm to our body. It is important to be able to monitor and detect this gas in many applications. The objective of the research is to discover a better way to fabricate an ammonia sensor. This paper describes and characterizes the gas sensing properties of a PANI (polyaniline)/Co3O4 composite thin film NH3 sensor at room temperature. Additional research is done to compare and contrast how the polymer (polyaniline) reacts with other metal oxides (PANI/V2O5 and PANI/Nb 2O5) at different temperatures. The results in the present work demonstrate that the PANI/Co3O4 composite sample devices produced optimum ammonia gas sensing characteristics at room temperature.

  6. Platinum-induced structural collapse in layered oxide polycrystalline films

    SciTech Connect

    Wang, Jianlin; Liu, Changhui; Huang, Haoliang; Fu, Zhengping; Peng, Ranran E-mail: yllu@ustc.edu.cn; Zhai, Xiaofang; Lu, Yalin E-mail: yllu@ustc.edu.cn

    2015-03-30

    Effect of a platinum bottom electrode on the SrBi{sub 5}Fe{sub 1−x}Co{sub x}Ti{sub 4}O{sub 18} layered oxide polycrystalline films was systematically studied. The doped cobalt ions react with the platinum to form a secondary phase of PtCoO{sub 2}, which has a typical Delafossite structure with a weak antiferromagnetism and an exceptionally high in-plane electrical conductivity. Formation of PtCoO{sub 2} at the interface partially consumes the cobalt dopant and leads to the structural collapsing from 5 to 4 layers, which was confirmed by X-ray diffraction and high resolution transmission electron microscopy measurements. Considering the weak magnetic contribution from PtCoO{sub 2}, the observed ferromagnetism should be intrinsic of the Aurivillius compounds. Ferroelectric properties were also indicated by the piezoresponse force microscopy. In this work, the platinum induced secondary phase at the interface was observed, which has a strong impact on Aurivillius structural configuration and thus the ferromagnetic and ferroelectric properties.

  7. Protein film photoelectrochemistry of the water oxidation enzyme photosystem II.

    PubMed

    Kato, Masaru; Zhang, Jenny Z; Paul, Nicholas; Reisner, Erwin

    2014-09-21

    Photosynthesis is responsible for the sunlight-powered conversion of carbon dioxide and water into chemical energy in the form of carbohydrates and the release of O2 as a by-product. Although many proteins are involved in photosynthesis, the fascinating machinery of Photosystem II (PSII) is at the heart of this process. This tutorial review describes an emerging technique named protein film photoelectrochemistry (PF-PEC), which allows for the light-dependent activity of PSII adsorbed onto an electrode surface to be studied. The technique is straightforward to use, does not require highly specialised and/or expensive equipment, is highly selective for the active fractions of the adsorbed enzyme, and requires a small amount of enzyme sample. The use of PF-PEC to study PSII can yield insights into its activity, stability, quantum yields, redox behaviour, and interfacial electron transfer pathways. It can also be used in PSII inhibition studies and chemical screening, which may prove useful in the development of biosensors. PSII PF-PEC cells also serve as proof-of-principle solar water oxidation systems; here, a comparison is made against PSII-inspired synthetic photocatalysts and materials for artificial photosynthesis.

  8. Nanostructured WS2-Ni composite films for improved oxidation, resistance and tribological performance

    NASA Astrophysics Data System (ADS)

    Xu, Shusheng; Gao, Xiaoming; Hu, Ming; Sun, Jiayi; Jiang, Dong; Zhou, Feng; Liu, Weimin; Weng, Lijun

    2014-01-01

    WS2 films were prepared by radio frequency sputtering. In order to improve its mechanical properties and oxidation resistance, Ni was used as the dopant and the effect of Ni content on the microstructure, anti-oxidation capability, mechanical and tribological properties of composite films were studied by energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, grazing incidence X-ray diffraction (GIXRD), high resolution transmission electron microscope (HRTEM), field emission scanning electron microscopy (FESEM), nano-indentation tester, scratch tester and ball-on-disk tribometer. WS2 existed in nanocrystalline 2H-WS2 structure and Ni an amorphous phase. Increasing the Ni content resulted in a microstructural change from columnar platelet structure of pure WS2 film to a fiber-like structure of the composite film at low Ni content (5.0 at%), and to a featureless structure at high Ni content (>10 at%). Meanwhile, the films became more and more compact and showed improved anti-oxidation capability. The films represented an increase in hardness with Ni content ranging from 0 to 10.3 at% due to the microstructure being densified, but exhibited high brittleness as the Ni content higher than 10 at%. The composite film at low Ni content of about 5.0 at% showed much better wear resistance than pure WS2 film, but became brittle and had poor wear resistances at high Ni content of above 10.3 at%. The WS2-5.0 at% Ni composite film exhibited the longest wear life of 5.8 × 105 cycles about sevenfold better than that of pure WS2 film in humid air. The wear mechanism was discussed in terms of the anti-oxidation capability of the films, morphology of the wear track and formation of transfer film.

  9. Simple Methods for Production of Nanoscale Metal Oxide Films from Household Sources

    ERIC Educational Resources Information Center

    Campbell, Dean J.; Baliss, Michelle S.; Hinman, Jordan J.; Ziegenhorn, John W.; Andrews, Mark J.; Stevenson, Keith J.

    2013-01-01

    Production of thin metal oxide films was recently explored as part of an outreach program with a goal of producing nanoscale structures with household items. Household items coated with various metals or titanium compounds can be heated to produce colorful films with nanoscale thicknesses. As part of a materials chemistry laboratory experiment…

  10. Nickel-oxido structure of a water-oxidizing catalyst film.

    PubMed

    Risch, Marcel; Klingan, Katharina; Heidkamp, Jonathan; Ehrenberg, David; Chernev, Petko; Zaharieva, Ivelina; Dau, Holger

    2011-11-21

    The atomic structure of an electrodeposited Ni catalyst film is dominated by extensive di-μ-oxido bridging between Ni(III/IV) ions, as revealed by X-ray absorption spectroscopy. The structure is surprisingly similar to that of an analogous Co-based film and colloidal Mn-based catalysts. Structural requirements for water oxidation are discussed.

  11. Characterization of quaternary metal oxide films by synchrotron x-ray fluorescence microprobe

    SciTech Connect

    Perry, D.L.; Thompson, A.C.; Russo, R.E.

    1997-04-01

    A high demand for thin films in industrial technology has been responsible for the creation of new techniques for the fabrication of such films. One highly effective method for the syntheses of variable composition thin films is pulsed-laser deposition (PLD). The technique has a large number of characteristics which make it an attractive approach for making films. It offers rapid deposition rates, congruent material transfer, simple target requirements from which to make the films, in situ multilayer deposition, and no gas composition or pressure requirements. Additionally, the technique can also afford crystalline films and films with novel structures. Pulsed-laser deposition can be used to make films of semiconductors, insulators, high-temperature superconductors, diamond-like films, and piezoelectric materials. Quaternary metal oxides involving calcium, nickel, and potassium have been shown to be quite effective in the catalysis of coal gasification and methane coupling. One approach to incorporating all three of the metal oxides into one phase is the use of laser ablation to prepare films of the catalysts so that they may be used for coatings, smooth surfaces on which to conduct detailed studies of gas-solid interface reactions that are involved in catalytic processes, and other applications. The problem of dissimilar boiling points of the three metal oxides system is overcome, since the laser ablation process effects the volatilization of all three components from the laser target essentially simultaneously. There is strong interest in gaining an understanding of the chemical and morphological aspects of the films that are deposited. Phenomena such as lattice defects and chemical heterogeneity are of interest. The experimental data discussed here are restricted to the matrix homogeneity of the films themselves for films which were void of microparticles.

  12. Dissolution of sputter-deposited iron oxide films used as a model for the passive film on iron

    SciTech Connect

    Virtanen, S.; Schmuki, P.; Davenport, A.J.; Vitus, C.M.

    1995-12-01

    This paper reports results from XANES (X-ray absorption near edge spectroscopy) studies during polarization of thin sputter-deposited Fe-oxide films in acidic solutions. The dissolution rate of Fe-oxides in acidic solutions was found to be strongly increased by the presence of Fe(2+) in the oxide. During anodic polarization in acidic solutions, a deleterious effect of chloride anions is found compared with sulfates. In HCl solutions of increasing concentration, not only the pH decrease, but also the increasing anion concentration accelerates dissolution. On the other hand, the dissolution rate in sulfuric acid does not depend on the sulfate concentration. During cathodic polarization, the dissolution rate is not affected by the presence of chloride ions. This could be due to the negative surface charge of n-type oxides at potentials lower than the flat-band potential, retarding anion adsorption on the surface. These results suggest that the detrimental role of chloride anions on the stability of Fe oxide films is due to a surface complexation effect. The dissolution rate is fairly independent of the potential in the anodic range, except at very high anodic potentials. The XANES spectra reveal no changes in the average oxide valency during anodic polarization. Thus in the passive range, the dissolution that takes place is mostly chemical rather than electrochemical. The findings and their relevance to the stability of natural passive films are discussed.

  13. Thin film bismuth iron oxides useful for piezoelectric devices

    DOEpatents

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  14. Process for growing a film epitaxially upon an oxide surface and structures formed with the process

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    1998-01-01

    A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  15. Process for growing a film epitaxially upon an oxide surface and structures formed with the process

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    1995-01-01

    A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  16. Effects of PbO on the oxide films of incoloy 800HT in simulated primary circuit of PWR

    NASA Astrophysics Data System (ADS)

    Tan, Yu; Yang, Junhan; Wang, Wanwan; Shi, Rongxue; Liang, Kexin; Zhang, Shenghan

    2016-05-01

    Effects of trace PbO on oxide films of Incoloy 800HT were investigated in simulated primary circuit water chemistry of PWR, also with proper Co addition. The trace PbO addition in high temperature water blocked the protective spinel oxides formation of the oxide films of Incoloy 800HT. XPS results indicated that the lead, added as PbO into the high temperature water, shows not only +2 valance but also +4 and 0 valances in the oxide film of 800HT co-operated with Fe, Cr and Ni to form oxides films. Potentiodynamic polarization results indicated that as PbO concentration increased, the current densities of the less protective oxide films of Incoloy 800HT decreased in a buffer solution tested at room temperature. The capacitance results indicated that the donor densities of oxidation film of Incoloy 800HT decreased as trace PbO addition into the high temperature water.

  17. Effects of working pressure on physical properties of tungsten-oxide thin films sputtered from oxide target

    SciTech Connect

    Riech, I.; Acosta, M.; Pena, J. L.; Bartolo-Perez, P.

    2010-03-15

    Tungsten-oxide films were deposited on glass substrates from a metal-oxide target by nonreactive radio-frequency sputtering. The authors have studied the effect that changing Ar gas pressure has on the electrical, optical, and chemical composition in the thin films. Resistivity of WO{sub 3} changed ten orders of magnitude with working gas pressure values from 20 to 80 mTorr. Thin films deposited at 20 mTorr of Ar sputtering pressure showed lower resistivity and optical transmittance. X-ray photoelectron spectroscopy (XPS) measurements revealed similar chemical composition for all samples irrespective of Ar pressure used. However, XPS analyses of the evolution of W 4f and O 1s peaks indicated a mixture of oxides dependent on the Ar pressure used during deposition.

  18. Investigation on vanadium oxide thin films deposited by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Margoni, Mudaliar Mahesh; Mathuri, S.; Ramamurthi, K.; Babu, R. Ramesh; Sethuraman, K.

    2016-05-01

    Vanadium oxide thin films were deposited at 400 °C by spray pyrolysis technique using 0.1 M aqueous precursor solution of ammonium meta vanadate (AMV) with two different pH values. X-ray diffraction results showed that the film prepared using aqueous precursor AMV solution (solution A; pH 7) is amorphous in nature and the film prepared by adding HNO3 in the AMV aqua solution A (solution B; pH 3) is polycrystalline in nature. Vanadium oxide film prepared from the precursor solution B is in the mixed phases of V2O5 and V4O7. Crystallinity is improved for the film prepared using solution B when compared to film prepared from solution A. Crystallite size, strain and dislocation density calculated for the film prepared from solution B is respectively 72.1 nm, 0.4554 × 10-3 lin.-2m-4 and 1.7263 × 1014 lin.m-2. Morphology study revealed that the size of the flakes formed on the surface of the films is influenced by the pH of the precursor solution. Average Visible Transmittance and maximum transmittance of the deposited films exceed 70% and the direct optical band gap value calculated for the films deposited from A and B solution is 1.91 eV and 2.08 eV respectively.

  19. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates.

    PubMed

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-01-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  20. Advanced functional oxide thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Millon, E.

    2013-08-01

    Pulsed-laser deposition is now a largely used growth method to prepare functional and multifunctional oxide films for application in microelectronics, spintronics, optics, materials for energy… The functional properties of such oxide films are strongly depending on the crystalline structure, and on the chemical composition through the local environment of cationic species surrounded by oxygen. While large oxygen deficiency cannot be obtained by classical growth method or in bulk state, oxide films with a high content of oxygen vacancies may be obtained by PLD. For oxide systems presenting possible stable sub-oxides, the formation of oxygen vacancies is linked to a decrease of the cationic valence state. A complete reduction can be observed leading to particular electronic properties: the case of TiOx (1.5 < x < 2) will be therefore presented and discussed. When no thermodynamically stable sub-oxides can be involved, the large oxygen deficiency may lead to the formation of nanocomposite films constituted by a metallic phase embedded in a stoichiometric oxide matrix. This phase separation induced by the control of oxygen pressure during the growth is in particular evidenced on Ga2Ox (2.1 < x < 3) films and their related physical (electrical and optical) properties are discussed.

  1. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates

    NASA Astrophysics Data System (ADS)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-04-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  2. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates.

    PubMed

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-01-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon. PMID:25883544

  3. Preparation of Thin Melanin-Type Films by Surface-Controlled Oxidation.

    PubMed

    Salomäki, Mikko; Tupala, Matti; Parviainen, Timo; Leiro, Jarkko; Karonen, Maarit; Lukkari, Jukka

    2016-04-26

    The preparation of thin melanin films suitable for applications is challenging. In this work, we present a new alternative approach to thin melanin-type films using oxidative multilayers prepared by the sequential layer-by-layer deposition of cerium(IV) and inorganic polyphosphate. The interfacial reaction between cerium(IV) in the multilayer and 5,6-dihydroxyindole (DHI) in the adjacent aqueous solution leads to the formation of a thin uniform film. The oxidation of DHI by cerium(IV) proceeds via known melanin intermediates. We have characterized the formed DHI-melanin films using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), UV-vis spectroscopy, and spectroelectrochemistry. When a five-bilayer oxidative multilayer is used, the film is uniform with a thickness of ca. 10 nm. Its chemical composition, as determined using XPS, is typical for melanin. It is also redox active, and its oxidation occurs in two steps, which can be assigned to semiquinone and quinone formation within the indole structural motif. Oxidative multilayers can also oxidize dopamine, but the reaction stops at the dopamine quinone stage because of the limited amount of the multilayer-based oxidizing agent. However, dopamine oxidation by Ce(IV) was studied also in solution by UV-vis spectroscopy and mass spectrometry in order to verify the reaction mechanism and the final product. In solution, the oxidation of dopamine by cerium shows that the indole ring formation takes place already at low pH and that the mass spectrum of the final product is practically identical with that of commercial melanin. Therefore, layer-by-layer formed oxidative multilayers can be used to deposit functional melanin-type thin films on arbitrary substrates by a surface-controlled reaction.

  4. Glucose-assisted reduction achieved transparent p-type cuprous oxide thin film by a solution method

    NASA Astrophysics Data System (ADS)

    Nie, Sha; Sun, Jian; Gong, Hao; Chen, Zequn; Huang, Yifei; Xu, Jianmei; Zhao, Ling; Zhou, Wei; Wang, Qing

    2016-08-01

    The fabrication of p-type cuprous oxide thin film via a cheap and simple chemical method has been known as challenging. We first find that glucose can assist reduce Cu to a lower valence state in the preparation of cuprous oxide films by the sol-gel method. By first adding glucose in the sol as reducing agent, oxidation from the oxygen in the environment is limited and transparent p-type cuprous oxide films are eventually achieved under optimized experimental conditions. We have developed a p-type cuprous oxide thin film with an optimal Hall mobility of ∼8 cm2/Vs and an optical transmittance of 78%.

  5. Solid-phase electrochemical reduction of graphene oxide films in alkaline solution

    PubMed Central

    2013-01-01

    Graphene oxide (GO) film was evaporated onto graphite and used as an electrode to produce electrochemically reduced graphene oxide (ERGO) films by electrochemical reduction in 6 M KOH solution through voltammetric cycling. Fourier transformed infrared and Raman spectroscopy confirmed the presence of ERGO. Electrochemical impedance spectroscopy characterization of ERGO and GO films in ferrocyanide/ferricyanide redox couple with 0.1 M KCl supporting electrolyte gave results that are in accordance with previous reports. Based on the EIS results, ERGO shows higher capacitance and lower charge transfer resistance compared to GO. PMID:24059434

  6. Erbium oxide thin films on Si(100) obtained by laser ablation and electron beam evaporation

    NASA Astrophysics Data System (ADS)

    Queralt, X.; Ferrater, C.; Sánchez, F.; Aguiar, R.; Palau, J.; Varela, M.

    1995-02-01

    Erbium oxide thin films have been obtained by laser ablation and electron beam evaporation techniques on Si(100) substrates. The samples were grown under different conditions of oxygen atmosphere and substrate temperature without any oxidation process after deposition. The crystal structure has been studied by X-ray diffraction. Films obtained by laser ablation are highly textured in the [ hhh] direction, although this depends on the conditions of oxygen pressure and substrate temperature. In order to study the depth composition profile of the thin films and the interdiffusion of erbium metal and oxygen towards the silicon substrates, X-ray photoelectron spectroscopy analyses have been carried out.

  7. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  8. Metal-oxide based transparent conductive oxides and thin film transistors for flexible electronics

    NASA Astrophysics Data System (ADS)

    Indluru, Anil

    The object of this study is to investigate and improve the performance/stability of the flexible thin film transistors (TFTs) and to study the properties of metal oxide transparent conductive oxides for wide range of flexible electronic applications. Initially, a study has been done to improve the conductivity of ITO (indium tin oxide) films on PEN (p olyethylene naphthalate) by inserting a thin layer of silver layer between two ITO layers. The multilayer with an optimum Ag mid-layer thickness, of 8 nm, exhibited excellent photopic average transmittance (˜ 88 %), resistivity (˜ 2.7 x 10-5 micro-cm.) and has the best Hackee figure of merit (41.0 x 10-3 O -1). The electrical conduction is dominated by two different scattering mechanisms depending on the thickness of the Ag mid-layer. Optical transmission is explained by scattering losses and absorption of light due to inter-band electronic transitions. A systematic study was carried out to improve the performance/stability of the TFTs on PEN. The performance and stability of a-Si:H and a-IZO (amorphous indium zinc oxide) TFTs were improved by performing a systematic low temperature (150 °C) anneals for extended times. For 96 hours annealed a-Si:H TFTs, the sub-threshold slope and off-current were reduced by a factor ˜ 3 and by 2 orders of magnitude, respectively when compared to unannealed a-Si:H TFTs. For a-IZO TFTs, 48 hours of annealing is found to be the optimum time for the best performance and elevated temperature stability. These devices exhibit saturation mobility varying between 4.5--5.5 cm2/V-s, ION/IOFF ratio was 10 6 and a sub-threshold swing variation of 1--1.25 V/decade. An in-depth study on the mechanical and electromechanical stress response on the electrical properties of the a-IZO TFTs has also been investigated. Finally, the a-Si:H TFTs were exposed to gamma radiation to examine their radiation resistance. The interface trap density (Nit) values range from 5 to 6 x 1011 cm-2 for only electrical

  9. Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes

    NASA Astrophysics Data System (ADS)

    MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

    2016-03-01

    In this work we report the fabrication of thin film transistors (TFT) with zinc oxide channel and molybdenum doped indium oxide (IMO) electrodes, achieved by room temperature sputtering. A set of devices was fabricated, with varying channel width and length from 5μm to 300μm. Output and transfer characteristics were then extracted to study the performance of thin film transistors, namely threshold voltage and saturation current, enabling to determine optimal fabrication process parameters. Optical transmission in the UV-VIS-IR are also reported.

  10. Effect of thermal processing on silver thin films of varying thickness deposited on zinc oxide and indium tin oxide

    SciTech Connect

    Sivaramakrishnan, K.; Ngo, A. T.; Alford, T. L.; Iyer, S.

    2009-03-15

    Silver films of varying thicknesses (25, 45, and 60 nm) were deposited on indium tin oxide (ITO) on silicon and zinc oxide (ZnO) on silicon. The films were annealed in vacuum for 1 h at different temperatures (300-650 deg. C). Four-point-probe measurements were used to determine the resistivity of the films. All films showed an abrupt change in resistivity beyond an onset temperature that varied with thickness. Rutherford backscattering spectrometry measurements revealed agglomeration of the Ag films upon annealing as being responsible for the resistivity change. X-ray pole figure analysis determined that the annealed films took on a preferential <111> texturing; however, the degree of texturing was significantly higher in Ag/ZnO/Si than in Ag/ITO/Si samples. This observation was accounted for by interface energy minimization. Atomic force microscopy (AFM) measurements revealed an increasing surface roughness of the annealed films with temperature. The resistivity behavior was explained by the counterbalancing effects of increasing crystallinity and surface roughness. Average surface roughness obtained from the AFM measurements were also used to model the agglomeration of Ag based on Ostwald ripening theory.

  11. Intercalative poly(carbazole) precursor electropolymerization within hybrid nanostructured titanium oxide ultrathin films.

    PubMed

    Frau, Antonio F; Estillore, Nicel C; Fulghum, Timothy M; Advincula, Rigoberto C

    2010-12-01

    A protocol for nanostructuring and electropolymerization of a hybrid semiconductor polycarbazole-titanium oxide ultrathin film is described. Ultrathin (<100 nm) films based on polycarbazole precursor polyelectrolytes and titanium oxide (TiOx) have been fabricated by combining the layer-by-layer (LbL) and surface sol-gel layering techniques. Film growth was followed and confirmed through UV-vis spectroscopy, ellipsometry and quartz crystal microbalance with dissipation (QCM-D). Subsequent anodic electrochemical oxidation of the carbazole pendant units afforded a conjugated polymer network (CPN) film within intercalating TiOx layers of cross-linked and π-conjugated carbazole units. Cyclic voltammetry (CV), UV-vis, and fluorescence spectroscopy measurements confirmed this process. The LbL-driven polyelectrolyte deposition process resulted in a quantified electrochemical response, proportional to the number of layers, while the TiOx acted as a dielectric spacer limiting electron transfer kinetics and attenuating energy transfer in fluorescence. Electro-optical properties were compared with other polycarbazole thin film materials with respect to bandgap energy (Eg). The straightforward protocol in film nanostructuring and barrier/dielectric properties of the inorganic oxide slab (denoted here as, TiOx) should enable applications in organic light-emitting diodes (OLEDs), dielectric mirrors, planar waveguides, and photovoltaic devices for these hybrid ultrathin films.

  12. Temperature threshold for nanorod structuring of metal and oxide films grown by glancing angle deposition

    SciTech Connect

    Deniz, Derya; Lad, Robert J.

    2011-01-15

    Thin films of tin (Sn), aluminum (Al), gold (Au), ruthenium (Ru), tungsten (W), ruthenium dioxide (RuO{sub 2}), tin dioxide (SnO{sub 2}), and tungsten trioxide (WO{sub 3}) were grown by glancing angle deposition (GLAD) to determine the nanostructuring temperature threshold, {Theta}{sub T}, above which adatom surface diffusion becomes large enough such that nanorod morphology is no longer formed during growth. The threshold was found to be lower in metals compared to oxides. Films were grown using both dc and pulsed dc magnetron sputtering with continuous substrate rotation over the temperature range from 291 to 866 K. Film morphologies, structures, and compositions were characterized by high resolution scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Films were also grown in a conventional configuration for comparison. For elemental metals, nanorod structuring occurs for films with melting points higher than that of Al (933 K) when grown at room temperature with a rotation rate of {approx}5 rpm, corresponding to a value of {Theta}{sub T}{approx_equal}0.33{+-}0.01. For the oxide films, a value of {Theta}{sub T}{approx_equal}0.5 was found, above which GLAD nanorod structuring does not occur. The existence of a nanostructuring temperature threshold in both metal and oxide GLAD films can be attributed to greater adatom mobilities as temperature is increased resulting in nonkinetically limited film nucleation and growth processes.

  13. Rapid deposition process for zinc oxide film applications in pyroelectric devices

    NASA Astrophysics Data System (ADS)

    Hsiao, Chun-Ching; Yu, Shih-Yuan

    2012-10-01

    Aerosol deposition (AD) is a rapid process for the deposition of films. Zinc oxide is a low toxicity and environmentally friendly material, and it possesses properties such as semiconductivity, pyroelectricity and piezoelectricity without the poling process. Therefore, AD is used to accelerate the manufacturing process for applications of ZnO films in pyroelectric devices. Increasing the temperature variation rate in pyroelectric films is a useful method for enhancing the responsivity of pyroelectric devices. In the present study, a porous ZnO film possessing the properties of large heat absorption and high temperature variation rate is successfully produced by the AD rapid process and laser annealing for application in pyroelectric devices.

  14. Structural and optical properties of zinc oxide film using RF-sputtering technique

    SciTech Connect

    Hashim, A. J.; Jaafar, M. S.; Ghazai, Alaa J.

    2012-11-27

    This paper reports the fabrication of zinc oxide (ZnO) film using RF-sputtering technique. Determination of the structural properties using High Resolution X-ray Diffraction (HRXRD) confirmed that ZnO film deposited on silicon (Si) substrate has a high quality. This result is in line with the Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) which were used to image the morphology of the film, in which a rough surface was demonstrated. Photoluminescence (PL) emission is included to study the optical properties of ZnO film that shows two PL peak in the UV region at 371 nm and in visible region at 530 nm respectively.

  15. Highly Sensitive and Fast Response Colorimetric Humidity Sensors Based on Graphene Oxides Film.

    PubMed

    Chi, Hong; Liu, Yan Jun; Wang, FuKe; He, Chaobin

    2015-09-16

    Uniform graphene oxide (GO) film for optical humidity sensing was fabricated by dip-coating technique. The resulting GO thin film shows linear optical shifts in the visible range with increase of humidity in the whole relative humidity range (from dry state to 98%). Moreover, GO films exhibit ultrafast sensing to moisture within 250 ms because of the unique atomic thinness and superpermeability of GO sheets. The humidity sensing mechanism was investigated using XRD and computer simulation. The ultrasensitive humidity colorimetric properties of GOs film may enable many potential applications such as disposable humidity sensors for packaging, health, and environmental monitoring.

  16. Correlation Between Metal-Insulator Transition Characteristics and Electronic Structure Changes in Vanadium Oxide Thin Films

    SciTech Connect

    Ruzmetov,D.; Senanayake, S.; Narayanamurti, V.; Ramanathan, S.

    2008-01-01

    We correlate electron transport data directly with energy band structure measurements in vanadium oxide thin films with varying V-O stoichiometry across the VO2 metal-insulator transition. A set of vanadium oxide thin films were prepared by reactive dc sputtering from a V target at various oxygen partial pressures (O2 p.p.). Metal-insulator transition (MIT) characteristic to VO2 can be seen from the temperature dependence of electrical resistance of the films sputtered at optimal O2 p.p. Lower and higher O2 p.p. result in disappearance of the MIT. The results of the near edge x-ray absorption fine structure spectroscopy of the O K edge in identical VO films are presented. Redistribution of the spectral weight from {sigma}* to {pi}* bands is found in the vanadium oxide films exhibiting stronger VO2 MIT. This is taken as evidence of the strengthening of the metal-metal ion interaction with respect to the metal-ligand and indirect V-O-V interaction in vanadium oxide films featuring sharp MIT. We also observe a clear correlation between MIT and the width and area of the lower {pi}* band, which is likely to be due to the emergence of the d|| band overlapping with {pi}*. The strengthening of this d|| band near the Fermi level only in the vanadium oxide compounds displaying the MIT points out the importance of the role of the d|| band and electron correlations in the phase transition.

  17. A sensitive film structure improvement of reduced graphene oxide based resistive gas sensors

    NASA Astrophysics Data System (ADS)

    Zhou, Yong; Xie, GuangZhong; Xie, Tao; Yuan, Huan; Tai, HuiLing; Jiang, YaDong; Chen, Zhi

    2014-07-01

    This study was focused on how to improve the gas sensing properties of resistive gas sensors based on reduced graphene oxide. Sol-airbrush technology was utilized to prepare reduced graphene oxide films using porous zinc oxide films as supporting materials mainly for carbon dioxide sensing applications. The proposed film structure improved the sensitivity and the response/recovery speed of the sensors compared to those of the conventional ones and alleviated the restrictions of sensors' performance to the film thickness. In addition, the fabrication technology is relatively simple and has potential for mass production in industry. The improvement in the sensitivity and the response/recovery speed is helpful for fast detection of toxic gases or vapors in environmental and industrial applications.

  18. Anodically Electrodeposited Iridium Oxide Films (AEIROF) from Alkaline Solutions for Electrochromic Display Devices

    NASA Astrophysics Data System (ADS)

    Yamanaka, Kazusuke

    1989-04-01

    Anodically electrodeposited iridium oxide films from alkaline solutions were investigated for application to electrochromic devices. Micro-crystalline (diameter: 15Å) films obtained by the electrolysis of aqueous alkaline solutions containing iridium chloride, oxalic acid and potassium carbonate showed good electrochromic reaction reversibility. The coloration efficiency of the films was about one third that of typical evaporated tungsten oxide films, and the response rate measured by the amount of injected charge was about double. The cycle lives of the cells, composed of electrodeposited films, 1M H3PO4-NaOH (pH{=}3˜ 5), and an activated carbon cloth, were more than 8× 106 with a 0.6 V, 1 Hz continuous square wave.

  19. Effects of oxygen content on the microstructures and optical properties of thermochromic vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Luo, Zhenfei; Wu, Zhiming; Wang, Tao; Li, Weizhi; Jiang, Yadong

    2012-02-01

    Reactive direct current magnetron sputtering and in situ thermal oxidation were used to prepare vanadium oxide (VO X ) thin films with different oxygen contents. X-ray diffraction, Fourier transform infrared spectroscopy and a field emission scanning electron microscope were employed to characterize the films. The optical properties of the VO X films at room temperature and 90 °C were investigated by applying an spectroscopic ellipsometer with a three-layer model of BEMA/Brendel-Bormann oscillator/substrate. It was demonstrated that the vanadium-oxygen bonds were strengthened, the film thickness and roughness decreased, while the grain size increased with increasing oxygen content. The increase in oxygen content had the effect of decreasing the near-infrared reflectance and free-electron concentration of the film at 90°C due to the decrease in the amount of VO2.

  20. Synthesis of iridescent Ni-containing anodic aluminum oxide films by anodization in oxalic acid

    NASA Astrophysics Data System (ADS)

    Xu, Qin; Ma, Hong-Mei; Zhang, Yan-Jun; Li, Ru-Song; Sun, Hui-Yuan

    2016-02-01

    Ni-containing anodic aluminum oxide films with highly saturated colors were synthesized using an ac electrodeposition method, and the optical and magnetic characteristics of the films were characterized. Precisely controllable color tuning could be obtained using wet-chemical etching to thin and widen the anodic aluminum oxide films pores isotropically before Ni deposition. Magnetic measurements indicate that such colored composite films not exhibit obvious easy magnetization direction. The resulted short (200 nm in length) and wide (50 nm in diameter) Ni nanowires present only fcc phase. The magnetization reversal mechanism is in good agreement with the symmetric fanning reversal mode which is discussed in detail. Such films may find applications in decoration, display and multifunctional anti-counterfeiting applications.

  1. Microstructure and optoelectronic properties of galliumtitanium-zinc oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Shou-bu; Lu, Zhou; Zhong, Zhi-you; Long, Hao; Gu, Jin-hua; Long, Lu

    2016-07-01

    Gallium-titanium-zinc oxide (GTZO) transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.

  2. Strongly improved electrochemical cycling durability by adding iridium to electrochromic nickel oxide films.

    PubMed

    Wen, Rui-Tao; Niklasson, Gunnar A; Granqvist, Claes G

    2015-05-13

    Anodically colored nickel oxide (NiO) thin films are of much interest as counter electrodes in tungsten oxide based electrochromic devices such as "smart windows" for energy-efficient buildings. However, NiO films are prone to suffering severe charge density degradation upon prolonged electrochemical cycling, which can lead to insufficient device lifetime. Therefore, a means to improve the durability of NiO-based films is an important challenge at present. Here we report that the incorporation of a modest amount of iridium into NiO films [Ir/(Ir + Ni) = 7.6 atom %] leads to remarkable durability, exceeding 10000 cycles in a lithium-conducting electrolyte, along with significantly improved optical modulation during extended cycling. Structure characterization showed that the face-centered-cubic-type NiO structure remained after iridium addition. Moreover, the crystallinity of these films was enhanced upon electrochemical cycling. PMID:25919917

  3. Characterization of epitaxially grown films of vanadium oxides

    SciTech Connect

    Rogers, K.D.; Coath, J.A.; Lovell, M.C. , Shrivenham, Swindon, Wiltshire, SN6 8LA, England )

    1991-08-01

    The growth of VO{sub 2} and V{sub 2}O{sub 3} thin films by reactive sputtering has been investigated. Previously reported studies of such thin films have often presented ambiguous results concerning the precise nature of the layers produced. A thorough and comprehensive characterization program including x-ray diffraction, scanning electron microscopy, Rutherford-backscattering spectroscopy, and electrical conductivity measurements has been undertaken to ensure that the films produced were of a true epitaxial nature.

  4. Physical properties of antimony-doped tin oxide thick films

    NASA Astrophysics Data System (ADS)

    Kaneko, H.; Miyake, K.

    1982-05-01

    The physical properties of Sb-doped SnO2 thick films, prepared by a repeating chemical spray deposition method, have been investigated. The films 1000-14 000-Å thick were deposited on fused quartz, borosilicate glass, and soda lime glass substrates at 600 °C using an aqueous solution of a mixture of SnCl4 and SbCl3. The films prepared by the method are homogeneous, and the electrical resistivity of the films on fused quartz and borosilicate glass substrates were found to be independent of the film thickness, and are 9.5×10-4 Ω cm, and 8.6×10-4 Ω cm, respectively. The resistivity of the films thicker than 4000 Å on soda lime glass substrates is almost constant, and is 1.8×10-3 Ω cm, although a large increase in the resistivity of the thinner films was observed. The optical band gap of the films on fused quartz and borosilicate glass substrates is also independent of the film thickness, and is almost the same: 3.75 eV. But the band gap of the films on soda lime glass substrates depends on the film thickness, and increases from 2.85 to 3.08 eV with increasing thickness from 2250 to 13 000 Å. The Hall mobility and carrier concentration of the films were also measured. The results of x-ray diffraction analysis and observations by SEM are described.

  5. Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance

    NASA Astrophysics Data System (ADS)

    Suko, Ayaka; Jia, JunJun; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

    2016-03-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300-1000 °C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 °C. At 600 °C, the films started to crystallize from the surface with c-axis preferred orientation. At 700-1000 °C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current-gate voltage (Id-Vg) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (Vth) and subthreshold swing decreased markedly after the post-annealing at 300 °C. The TFT using the totally crystallized films also showed the decrease in Vth, whereas the field-effect mobility decreased considerably.

  6. Oxidation and biodegradation of polyethylene films containing pro-oxidantadditives: Synergistic effects of sunlight exposure, thermal aging and fungal biodegradation

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Synergistic effects of sunlight exposure, thermal aging and fungal biodegradation on the oxidation and biodegradation of linear low density poly (ethylene) PE-LLD films containing pro-oxidant were examined. To achieve oxidation and degradation, films were first exposed to the sunlight for 93 days du...

  7. Difference in charge transport properties of Ni-Nb thin films with native and artificial oxide

    SciTech Connect

    Trifonov, A. S.; Lubenchenko, A. V.; Polkin, V. I.; Pavolotsky, A. B.; Ketov, S. V.; Louzguine-Luzgin, D. V.

    2015-03-28

    Here, we report on the properties of native and artificial oxide amorphous thin film on a surface of an amorphous Ni-Nb sample. Careful measurements of local current-voltage characteristics of the system Ni-Nb / NiNb oxide/Pt, were carried out in contact mode of an atomic force microscope. Native oxide showed n-type conductivity, while in the artificial one exhibited p-type one. The shape of current-voltage characteristic curves is unique in both cases and no analogical behavior is found in the literature. X-ray photoelectron spectroscopy (XPS) measurements were used to detect chemical composition of the oxide films and the oxidation state of the alloy components. Detailed analysis of the XPS data revealed that the structure of natural Ni-Nb oxide film consists of Ni-NbO{sub x} top layer and nickel enriched bottom layer which provides n-type conductivity. In contrast, in the artificial oxide film Nb is oxidized completely to Nb{sub 2}O{sub 5}, Ni atoms migrate into bulk Ni-Nb matrix. Electron depletion layer is formed at the Ni-Nb/Nb{sub 2}O{sub 5} interface providing p-type conductivity.

  8. Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films

    SciTech Connect

    Jolly Bose, R.; Kumar, R. Vinod; Sudheer, S. K.; Mahadevan Pillai, V. P.; Reddy, V. R.; Ganesan, V.

    2012-12-01

    Silver incorporated tungsten oxide thin films are prepared by RF magnetron sputtering technique. The effect of silver incorporation in micro structure evolution, phase enhancement, band gap tuning and other optical properties are investigated using techniques such as x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and UV-Visible spectroscopy. Effect of silver addition in phase formation and band gap tuning of tungsten oxide thin films are investigated. It is found that the texturing and phase formation improves with enhancement in silver content. It is also found that as the silver incorporation enhances the thickness of the films increases at the same time the strain in the film decreases. Even without annealing the desired phase can be achieved by doping with silver. A broad band centered at the wavelength 437 nm is observed in the absorption spectra of tungsten oxide films of higher silver incorporation and this can be attributed to surface plasmon resonance of silver atoms present in the tungsten oxide matrix. The transmittance of the films is decreased with increase in silver content which can be due to increase in film thickness, enhancement of scattering, and absorption of light caused by the increase of grain size, surface roughness and porosity of films and enhanced absorption due to surface plasmon resonance of silver. It is found that silver can act as the seed for the growth of tungsten oxide grains and found that the grain size increases with silver content which in turn decreases the band gap of tungsten oxide from 3.14 eV to 2.70 eV.

  9. The growth and evolution of thin oxide films on delta-plutonium surfaces

    SciTech Connect

    Garcia Flores, Harry G; Pugmire, David L

    2009-01-01

    The common oxides of plutonium are the dioxide (PuO{sub 2}) and the sesquioxide (Pu{sub 2}O{sub 3}). The structure of an oxide on plutonium metal under air at room temperature is typically described as a thick PuO{sub 2} film at the gas-oxide interface with a thinner PuO{sub 2} film near the oxide-metal substrate interface. In a reducing environment, such as ultra high vacuum, the dioxide (Pu{sup 4+}; O/Pu = 2.0) readily converts to the sesquioxide (Pu{sup 3+}; O/Pu = 1.5) with time. In this work, the growth and evolution of thin plutonium oxide films is studied with x-ray photoelectron spectroscopy (XPS) under varying conditions. The results indicate that, like the dioxide, the sesquioxide is not stable on a very clean metal substrate under reducing conditions, resulting in substoichiometric films (Pu{sub 2}O{sub 3-y}). The Pu{sub 2}O{sub 3-y} films prepared exhibit a variety of stoichiometries (y = 0.2-1) as a function of preparation conditions, highlighting the fact that caution must be exercised when studying plutonium oxide surfaces under these conditions and interpreting resulting data.

  10. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes.

    PubMed

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-01-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials. PMID:26831759

  11. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

    PubMed Central

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-01-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials. PMID:26831759

  12. Tungsten oxide-Au nanosized film composites for glucose oxidation and sensing in neutral medium

    PubMed Central

    Gougis, Maxime; Ma, Dongling; Mohamedi, Mohamed

    2015-01-01

    In this work, we report for the first time the use of tungsten oxide (WOx) as catalyst support for Au toward the direct electrooxidation of glucose. The nanostructured WOx/Au electrodes were synthesized by means of laser-ablation technique. Both micro-Raman spectroscopy and transmission electron microscopy showed that the produced WOx thin film is amorphous and made of ultrafine particles of subnanometer size. X-ray diffraction and X-ray photoelectron spectroscopy revealed that only metallic Au was present at the surface of the WOx/Au composite, suggesting that the WOx support did not alter the electronic structure of Au. The direct electrocatalytic oxidation of glucose in neutral medium such as phosphate buffered saline (pH 7.2) solution has been investigated with cyclic voltammetry, chronoamperometry, and square-wave voltammetry. Sensitivity as high as 65.7 μA cm−2 mM−1 up to 10 mM of glucose and a low detection limit of 10 μM were obtained with square-wave voltammetry. This interesting analytical performance makes the laser-fabricated WOx/Au electrode potentially promising for implantable glucose fuel cells and biomedical analysis as the evaluation of glucose concentration in biological fluids. Finally, owing to its unique capabilities proven in this work, it is anticipated that the laser-ablation technique will develop as a fabrication tool for chip miniature-sized sensors in the near future. PMID:25931820

  13. Tungsten oxide-Au nanosized film composites for glucose oxidation and sensing in neutral medium.

    PubMed

    Gougis, Maxime; Ma, Dongling; Mohamedi, Mohamed

    2015-01-01

    In this work, we report for the first time the use of tungsten oxide (WOx) as catalyst support for Au toward the direct electrooxidation of glucose. The nanostructured WOx/Au electrodes were synthesized by means of laser-ablation technique. Both micro-Raman spectroscopy and transmission electron microscopy showed that the produced WOx thin film is amorphous and made of ultrafine particles of subnanometer size. X-ray diffraction and X-ray photoelectron spectroscopy revealed that only metallic Au was present at the surface of the WOx/Au composite, suggesting that the WOx support did not alter the electronic structure of Au. The direct electrocatalytic oxidation of glucose in neutral medium such as phosphate buffered saline (pH 7.2) solution has been investigated with cyclic voltammetry, chronoamperometry, and square-wave voltammetry. Sensitivity as high as 65.7 μA cm(-2) mM(-1) up to 10 mM of glucose and a low detection limit of 10 μM were obtained with square-wave voltammetry. This interesting analytical performance makes the laser-fabricated WOx/Au electrode potentially promising for implantable glucose fuel cells and biomedical analysis as the evaluation of glucose concentration in biological fluids. Finally, owing to its unique capabilities proven in this work, it is anticipated that the laser-ablation technique will develop as a fabrication tool for chip miniature-sized sensors in the near future.

  14. Formation of Silica/Graphene Oxide Hybrid Nano Films by Layer-by-Layer Self-Assembly and Biomimetic Silicification.

    PubMed

    Yang, Sung Ho

    2015-02-01

    Silica/graphene oxide hybrid thin films were formed by layer-by-layer self-assembly and biomimetic silicification, and the thickness and structure of hybrid thin films were finely controlled at the nanometer scale, by tuning number of the layer-by-layer process. The physical properties of thin films were characterized by infrared spectroscopy, atomic force microscopy, and scanning electron microscopy. In addition, silica/graphene oxide hybrid thin films were successfully utilized for cell culture platforms.

  15. The effect of hydrogen peroxide on uranium oxide films on 316L stainless steel

    NASA Astrophysics Data System (ADS)

    Wilbraham, Richard J.; Boxall, Colin; Goddard, David T.; Taylor, Robin J.; Woodbury, Simon E.

    2015-09-01

    For the first time the effect of hydrogen peroxide on the dissolution of electrodeposited uranium oxide films on 316L stainless steel planchets (acting as simulant uranium-contaminated metal surfaces) has been studied. Analysis of the H2O2-mediated film dissolution processes via open circuit potentiometry, alpha counting and SEM/EDX imaging has shown that in near-neutral solutions of pH 6.1 and at [H2O2] ⩽ 100 μmol dm-3 the electrodeposited uranium oxide layer is freely dissolving, the associated rate of film dissolution being significantly increased over leaching of similar films in pH 6.1 peroxide-free water. At H2O2 concentrations between 1 mmol dm-3 and 0.1 mol dm-3, formation of an insoluble studtite product layer occurs at the surface of the uranium oxide film. In analogy to corrosion processes on common metal substrates such as steel, the studtite layer effectively passivates the underlying uranium oxide layer against subsequent dissolution. Finally, at [H2O2] > 0.1 mol dm-3 the uranium oxide film, again in analogy to common corrosion processes, behaves as if in a transpassive state and begins to dissolve. This transition from passive to transpassive behaviour in the effect of peroxide concentration on UO2 films has not hitherto been observed or explored, either in terms of corrosion processes or otherwise. Through consideration of thermodynamic solubility product and complex formation constant data, we attribute the transition to the formation of soluble uranyl-peroxide complexes under mildly alkaline, high [H2O2] conditions - a conclusion that has implications for the design of both acid minimal, metal ion oxidant-free decontamination strategies with low secondary waste arisings, and single step processes for spent nuclear fuel dissolution such as the Carbonate-based Oxidative Leaching (COL) process.

  16. Infrared and x-ray photoelectron spectra of ruthenium oxide films and ruthenium hydroxide

    SciTech Connect

    Belova, I.D.; Shifrina, R.R.; Roginskaya, Yu.E.; Popov, A.V.; Varlamova, T.V.

    1988-03-01

    The IR and x-ray photoelectron spectra of ruthenium hydroxide and of ruthenium oxide films produced by ruthenium chloride hydroxide decomposition at 300, 400, 500, and 600 degrees C were examined in order to obtain information concerning the effect of hydration on the structure and electronic properties of the surface of ruthenium oxide electrodes. It was shown that Ru hydroxide and Ru oxide films contain both water molecules and hydroxyl groups; the latter are retained up to higher temperatures (600 degrees C) in the Ru oxide films than in Ru hydroxide. It was found that water makes the materials studied amorphous, and it also was found that hydration influences their electronic structure (valence band and the electronic core levels of Ru and O).

  17. The formation of tin oxides in thin-film Sn/C/KCl(100) structures

    SciTech Connect

    Yurakov, Yu. A. Ryabtsev, S. V.; Chuvenkova, O. A.; Domashevskaya, E. P.; Nikitenko, A. S.; Kannykin, S. V.; Kushchev, S. B.

    2009-01-15

    The formation of oxides upon the thermal annealing (both in air and vacuum) of island tin films grown on a KCl(100) substrate, which was coated by a thin layer of amorphous carbon, has been investigated by transmission electron microscopy. It is established that thermal annealing at temperatures below the tin melting point (T{sub m}) does not lead to phase transitions with the formation of new crystalline oxide phases. At the same time, the films undergo structural changes: the average size of blocks in the substrate plane decreases compared to those in an as-deposited film. Thermal annealing in air at temperatures above the tin melting point leads to the formation of multiphase oxide structures and increases the average size of blocks and islands in the substrate plane. It is shown that preliminary thermal annealing in air at temperatures below T{sub m} hinders oxidation upon subsequent heat treatment.

  18. Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

    SciTech Connect

    Flötotto, D. Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

    2014-03-03

    The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al{sub 2}O{sub 3} films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively.

  19. Mechanism of growth and structure of titanium oxide ultrathin films deposited on Cu(0 0 1)

    NASA Astrophysics Data System (ADS)

    Finetti, P.; Caffio, M.; Cortigiani, B.; Atrei, A.; Rovida, G.

    2008-03-01

    The growth mechanism, composition and structure of ultrathin films of titanium oxide deposited on the Cu(0 0 1) surface were investigated by means of XPS, LEIS, LEED and STM. Titanium oxide films were deposited on the Cu(0 0 1) surface previously saturated with a (√2 × 2√2) R45° structure of chemisorbed oxygen. The oxide films were prepared by evaporation of titanium in O 2 atmosphere ( p in the 10 -6 mbar range) while the substrate temperature was kept at 573 K. The Cu LEIS signal versus the amount of deposited titanium (as determined by means of XPS) indicates the growth of 2D islands in the early stages of deposition. Upon increasing the amount of deposited titanium multilayer islands begin to grow. The XPS results indicate that the oxide phases formed for Ti coverages above 1 ML have a TiO 2 stoichiometry. At very low coverages, a LEED pattern with a centred rectangular unit cell is observed. STM measurements show that at this stage of the growth the oxide islands are incorporated in the outermost layer of the substrate and the removed copper atoms form islands around the oxide regions. The very early stages of titanium oxide growth corresponding to the formation of this rectangular phase were also investigated by Ti deposition on the oxygen chemisorbed phase under UHV conditions at 573 K. In this way it is possible to study the reaction of Ti with chemisorbed oxygen. Upon increasing the Ti coverage above 0.5 ML, an oxide film with a slightly distorted hexagonal unit cell begins to grow. The quasi-hexagonal phase of titanium oxide can also be formed by annealing at 773 K the rectangular phase. At higher coverages, when the substrate surface is completely covered by the oxide, the film exhibits a LEED pattern with a regular hexagonal unit cell.

  20. Evolution of microstructure in vanadium oxide bolometer film during annealing process

    NASA Astrophysics Data System (ADS)

    Su, Yu-Yu; Cheng, Xing-Wang; Li, Jing-Bo; Dou, Yan-Kun; Rehman, Fida; Su, De-Zhi; Jin, Hai-Bo

    2015-12-01

    Vanadium oxide thin films were prepared through direct current magnetron reactive sputtering and post annealing process. The evolution of composition, microstructure, and electrical properties of as-deposited amorphous films during the annealing process was clarified by X-ray diffraction, scanning electron microscopy and temperature-dependent resistance measurement. A new composition of thin film was acquired which consisted of crystalline V6O13 and amorphous phase. Sheet resistance and temperature coefficient of resistance (TCR) of the thin film are 90 kΩ/□ (measured at room temperature) and 2.52%/K, respectively. No metal-to-semiconductor transition was observed in the obtained film at temperatures ranging from room-temperature to 90 °C, suggesting the thin film is suitable for the application in microbolometer.

  1. Synthesis and characterization of hafnium oxide films for thermo and photoluminescence applications.

    PubMed

    Mendoza, J Guzmán; Frutis, M A Aguilar; Flores, G Alarcón; Hipólito, M García; Maciel Cerda, A; Azorín Nieto, J; Montalvo, T Rivera; Falcony, C

    2010-01-01

    Hafnium oxide (HfO(2)) films were deposited by the ultrasonic spray pyrolysis process. The films were synthesized from hafnium chloride as raw material in deionized water as solvent and were deposited on corning glass substrates at temperatures from 300 to 600 degrees C. For substrate temperatures lower than 400 degrees C the deposited films were amorphous, while for substrate temperatures higher than 450 degrees C, the monoclinic phase of HfO(2) appeared. Scanning electron microscopy showed that the film's surface resulted rough with semi-spherical promontories. The films showed a chemical composition close to HfO(2), with an Hf/O ratio of about 0.5. UV radiation was used in order to achieve the thermoluminescent characterization of the films; the 240 nm wavelength induced the best response. In addition, preliminary photoluminescence spectra, as a function of the deposition temperatures, are shown.

  2. Influence of Heat Treatment Conditions on the Properties of Vanadium Oxide Thin Films for Thermochromic Applications.

    PubMed

    Kim, Donguk; Kwon, Samyoung; Park, Young; Boo, Jin-Hyo; Nam, Sang-Hun; Joo, Yang Tae; Kim, Minha; Lee, Jaehyeong

    2016-05-01

    In present work, the effects of the heat treatment on the structural, optical, and thermochromic properties of vanadium oxide films were investigated. Vanadium dioxide (VO2) thin films were deposited on glass substrate by reactive pulsed DC magnetron sputtering from a vanadium metal target in mixture atmosphere of argon and oxygen gas. Various heat treatment conditions were applied in order to evaluate their influence on the crystal phases formed, surface morphology, and optical properties. The films were characterized by an X-ray diffraction (XRD) in order to investigate the crystal structure and identify the phase change as post-annealing temperature of 500-600 degrees C for 5 minutes. Surface conditions of the obtained VO2(M) films were analyzed by field emission scanning electron microscopy (FE-SEM) and the semiconductor-metal transition (SMT) characteristics of the VO2 films were evaluate by optical spectrophotometry in the UV-VIS-NIR, controlling temperature of the films.

  3. High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

    SciTech Connect

    Mu, Haichuan; Zhang, Zhiqiang; Wang, Keke; Xie, Haifen; Zhao, Xiaojing; Liu, Feng

    2014-07-21

    Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5 nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36 s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductive graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.

  4. High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

    NASA Astrophysics Data System (ADS)

    Mu, Haichuan; Zhang, Zhiqiang; Zhao, Xiaojing; Liu, Feng; Wang, Keke; Xie, Haifen

    2014-07-01

    Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5 nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36 s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductive graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.

  5. Room temperature ferromagnetism in Mn- and Fe-doped indium tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Venkatesan, M.; Gunning, R. D.; Stamenov, P.; Coey, J. M. D.

    2008-04-01

    Undoped and transition-metal doped indium tin oxide films have been grown by pulsed laser deposition technique, on single crystalline c-plane (0001) and r-plane (1102) sapphire substrates maintained at 500-850°C. Magnetization measurements of films deposited at different temperatures indicate that ferromagnetism appears for deposition temperatures, Tdep>600°C, with the highest moment for films deposited around 750°C. Qualitative different ferromagnetic behavior has been observed at room temperature in Fe- and Mn-doped thin films. The stable, hysteretic ferromagnetism of the Fe-doped films is due to the presence of magnetite, as seen in transmission Mössbauer spectra. The Mn-doped films show anhysteretic ferromagnetism which decays over time. It is somehow intrinsic, but not due to the Mn ions, which remains paramagnetic down to 4K. No anomalous Hall effect is observed.

  6. Reduced graphene oxide based silver sulfide hybrid films formed at a liquid/liquid interface

    SciTech Connect

    Bramhaiah, K. John, Neena S.

    2014-04-24

    Free-standing, ultra-thin films of silver sulfide and reduced graphene oxide (RGO) based silver sulfide hybrids are prepared at a liquid/liquid interface employing in situ chemical reaction strategy. Ag{sub 2}S and RGO−Ag{sub 2}S hybrid films are characterized by various techniques such as UV-visible and photo luminescence spectroscopy, X-ray diffraction and scanning electron microscopy. The morphology of hybrid films consists of Ag{sub 2}S nanocrystals on RGO surface while Ag{sub 2}S films contains branched network of dendritic structures. RGO−Ag{sub 2}S exhibit interesting optical and electrical properties. The hybrid films absorb in the region 500–650 nm and show emission in the red region. A higher conductance is observed for the hybrid films arising from the RGO component. This simple low cost method can be extended to prepare other RGO based metal sulfides.

  7. Influence of Heat Treatment Conditions on the Properties of Vanadium Oxide Thin Films for Thermochromic Applications.

    PubMed

    Kim, Donguk; Kwon, Samyoung; Park, Young; Boo, Jin-Hyo; Nam, Sang-Hun; Joo, Yang Tae; Kim, Minha; Lee, Jaehyeong

    2016-05-01

    In present work, the effects of the heat treatment on the structural, optical, and thermochromic properties of vanadium oxide films were investigated. Vanadium dioxide (VO2) thin films were deposited on glass substrate by reactive pulsed DC magnetron sputtering from a vanadium metal target in mixture atmosphere of argon and oxygen gas. Various heat treatment conditions were applied in order to evaluate their influence on the crystal phases formed, surface morphology, and optical properties. The films were characterized by an X-ray diffraction (XRD) in order to investigate the crystal structure and identify the phase change as post-annealing temperature of 500-600 degrees C for 5 minutes. Surface conditions of the obtained VO2(M) films were analyzed by field emission scanning electron microscopy (FE-SEM) and the semiconductor-metal transition (SMT) characteristics of the VO2 films were evaluate by optical spectrophotometry in the UV-VIS-NIR, controlling temperature of the films. PMID:27483853

  8. Fabrication of transparent and ultraviolet shielding composite films based on graphene oxide and cellulose acetate.

    PubMed

    de Moraes, Ana Carolina Mazarin; Andrade, Patricia Fernanda; de Faria, Andreia Fonseca; Simões, Mateus Batista; Salomão, Francisco Carlos Carneiro Soares; Barros, Eduardo Bedê; Gonçalves, Maria do Carmo; Alves, Oswaldo Luiz

    2015-06-01

    Graphene oxide (GO) has been considered a promising filler material for building polymeric nanocomposites because of its excellent dispersibility and high surface area. In this work, we present the fabrication and characterization of transparent and ultraviolet (UV) shielding composite films based on GO and cellulose acetate (CA). GO sheets were found to be well-dispersed throughout the CA matrix, providing smooth and homogeneous composite films. Moreover, the GO sheets were completely embedded within the CA matrix and no presence of this nanomaterial was found at the surface. Nevertheless, CAGO composite films offered an improved high energy light-shielding capacity when compared to pristine CA films. Particularly for UVC irradiation, the CAGO film containing 0.50wt% GO displayed a UV-shielding capacity of 57%, combined with 79% optical transparency under visible light. These CAGO composite films can be potentially applied as transparent UV-protective coatings for packing biomedical, pharmaceutical, and food products.

  9. Synthesis and Applications of Titanium Oxide Nanotube Thin Films

    NASA Astrophysics Data System (ADS)

    Miyauchi, Masahiro; Tokudome, Hiromasa

    Layer-by-layer or vertically aligned TiO2 nanotube thin films were fabricated by using hydrothermally grown titanate nanotubes. These films were optically transparent and exhibited various functions. Layer-by-layer growth of TiO2 nanotubes on glass substrates was achieved by alternate layer deposition using an aqueous solution of colloidal titanate nanotubes and that of a polycation. These films exhibited photoinduced hydrophilic conversion, low-reflectivity, and significant electrochromism, owing to their unique one dimensional open-pore nanostructure. In addition, transparent thin films of vertically aligned TiO2 nanotube arrays were grown by a hydrothermal treatment of metal Ti thin film on glass substrates. These nanotube arrays were well adhered to the substrates and exhibited super-hydrophilicity even under the dark condition and the efficient electron field emission.

  10. Thick film oxidation of copper in an electroplated MEMS process

    NASA Astrophysics Data System (ADS)

    Lazarus, N.; Meyer, C. D.; Bedair, S. S.; Song, X.; Boteler, L. M.; Kierzewski, I. M.

    2013-06-01

    Copper forms a porous oxide, allowing the formation of oxide layers up to tens of microns thick to be created at modest processing temperatures. In this work, the controlled oxidation of copper is employed within an all-metal electroplating process to create electrically insulating, structural posts and beams. This capability could eliminate the additional dielectric deposition and patterning steps that are often needed during the construction of sensors, waveguides, and other microfabricated devices. In this paper, copper oxidation rates for thermal and plasma-assisted growth methods are characterized. Time control of the oxide growth enables larger copper structures to remain conductive while smaller copper posts are fully oxidized. The concept is demonstrated using the controlled oxidation of a copper layer between two nickel layers to fabricate nickel inductors having both copper electrical vias and copper oxide support pillars. Nickel was utilized in this demonstration for its resistance against low temperature oxidation and interdiffusion with copper.

  11. Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

    2015-12-01

    Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

  12. Electrocatalytic Oxidation of Alcohols on Cu2O/Cu Thin Film Electrodeposited on Titanium Substrate

    NASA Astrophysics Data System (ADS)

    Bezghiche-Imloul, T.; Hammache-Makhloufi, H.; Ait Ahmed, N.

    2016-05-01

    A novel class of nanomaterials consisting of a composite thin film of cooper metal nanoparticles and cuprous oxide (Cu2O/Cu) for the catalytic electrooxidation of methanol, ethanol and ethylene glycol is considered here. The material was prepared by electrochemical deposition under a potentiostatic condition of -250mV vs saturated calomel electrode (SCE) from acetate bath at titanium substrate. The effect of electrodeposition time on the structure, composition and morphology of the deposit was investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results indicated the formation of pure cuprous oxide Cu2O thin film at low electrodeposition time (5 min) and Cu2O oxide thin film decorated with Cu nanoparticles (Cu2O/Cu) at high electrodeposition time. The obtained Cu2O and Cu2O/Cu thin films were explored for the electrochemical oxidation of alcohols in 1 M NaOH alkaline medium using cyclic voltammetry (CV) method. The Cu2O/Cu thin film grown at electrodeposition time of 15 min shows the best electrocatalytic performance toward ethanol oxidation. The effect of concentration of alcohols on the oxidation reaction was studied by CV and chronoamperometry. It was found that the reaction is governed by an irreversible diffusion process. The promising electrocatalytic activity of the Cu2O/Cu electrode provides a new platform for the fabrication of high-performance thin films for alcohols oxidation in alkaline medium. Therefore, the Cu2O/Cu electrode is a suitable as a less expensive electrocatalyst for alcohols oxidation.

  13. Evaluation of Characterization Techniques for Iron Pipe Corrosion Products and Iron Oxide Thin Films

    SciTech Connect

    Borch, Thomas; Camper, Anne K.; Biederman, Joel A.; Butterfield, Phillip; Gerlach, Robin; Amonette, James E.

    2008-10-01

    A common problem faced by drinking water studies is that of properly characterizing the corrosion products (CP) in iron pipescor synthetic Fe (hydr)oxides used to simulate the iron pipe used in municipal drinking-water systems. The present work compares the relative applicability of a suite of imaging and analytical techniques for the characterization of CPs and synthetic Fe oxide thin films and provide an overview of the type of data that each instrument can provide as well as their limitations to help researchers and consultants choose the best technique for a given task. Crushed CP from a water distribution system and synthetic Fe oxide thin films formed on glass surfaces were chosen as test samples for this evaluation. The CP and synthetic Fe oxide thin films were analyzed by atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive spectroscopy, time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray powder diffractometry (XRD), grazing incident diffractometry (GID), transmission electron microscopy (TEM), selected area electron diffraction, X-ray photoelectron spectroscopy (XPS), Fourier transform infrared, Mössbauer spectroscopy, Brunauer-Emmett-Teller N2 adsorption and Fe concentration was determined by the ferrozine method. XRD and GID were found to be the most suitable techniques for identification of the mineralogical composition of CP and synthetic Fe oxide thin films, respectively. AFM and a combined ToF-SIMS-AFM approach proved excellent for roughness and depth profiling analysis of synthetic Fe oxide thin films, respectively. Corrosion products were difficult to study by AFM due to their surface roughness, while synthetic Fe oxide thin films resisted most spectroscopic methods due to their limited thickness (118 nm). XPS analysis is not recommended for mixtures of Fe (hydr)oxides due to their spectral similarities. SEM and TEM provided great detail on mineralogical morphology.

  14. Epitaxial cobalt oxide films on Ir(100)-the importance of crystallographic analyses.

    PubMed

    Heinz, K; Hammer, L

    2013-05-01

    Epitaxial cobalt oxide films on Ir(100) exhibit a rich scenario of different structural phases which are reviewed in this paper. The great majority of phases could be, as a rare case, crystallographically described by the joint application of atomically resolved STM and quantitative LEED, whereby structural surprises were more the rule than the exception. So, the oxide grows in the polar (111) orientation for both the Co3O4 and CoO stoichiometry on the bare Ir substrate in spite of the latter's square symmetry. Moreover, the film orientation can be tuned to non-polar (100) growth when one or several pseudomorphic Co layers are introduced as an interface between oxide and Ir substrate. By using the nanostructured Ir(100)-(5 × 1)-H phase as a template a nanostructured Co film can be formed whose oxidation leads to a nanostructured oxide. The nominally polar films circumvent the polarity problem by appropriate surface terminations. That of CoO(111) is, again as a surprise, realized by a switch from rocksalt-type to wurtzite-type stacking near the surface, by which the latter becomes metallic. The stepwise oxidation of a pseudomorphic Co layer on the bare Ir substrate leads to the sequential formation of rocksalt-type tetrahedral Co-O building blocks (with intermediate BN-type blocks) whereby the Co species more and more assume positions determined by the inner-oxidic binding.

  15. Oxidation studies of niobium thin films at room temperature by X-ray reflectivity

    NASA Astrophysics Data System (ADS)

    Sokhey, K. J. S.; Rai, S. K.; Lodha, G. S.

    2010-10-01

    We report the results of growth kinetics of oxidation process on niobium thin film surfaces exposed to air at room temperature by using a surface sensitive non-destructive X-ray reflectivity technique. The oxidation process follows a modified Cabrera-Mott model of thin films. We have shown that the oxide growth is limited by the internal field due to the contact potential which develops during the initial stage of oxidation. The calculated contact potential for 100 and 230 Å thick films is 0.81 ± 0.14 and 1.20 ± 0.11 V respectively. We report that 40% increase in the contact potential increases the growth rate for the first few mono layers of Nb 2O 5 from ˜2.18 to ˜2790 Å/s. The growth rates of oxidation on these samples become similar after the oxide thicknesses of ˜25 Å are reached. We report on the basis of our studies that a protective layer should be grown in situ to avoid oxidation of Nb thin film surface of Nb/Cu cavities.

  16. Metal-insulator transitions in non-stoichiometric, chromium, and titanium doped vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Metcalf, Patricia Ann

    The major focus of the research was on the preparation of vanadium oxide thin films with metal-insulator transitions equivalent to those found in single crystals. Thin films of VO2, V1-x M'xO 2 (M' = Cr, Ti, Mo, W), V3O5, V6O 13, V2O3, and (V1-xMx) 2O3 (M = Cr, Ti) were prepared by the reduction of sol-gel derived vanadium oxide films in inert atmospheres. Subsequent anneals of un-doped V2O3 films in controlled oxygen atmosphere conditions yielded non-stoichiometric V2-yO3 films. In addition, thick films of V2O3 were produced using laser lift-off and particle embedding techniques. Vanadium oxide nano-crystals and nano-powders were synthesized via hydrothermal techniques for use as the embedded particle materials. The effect of thickness and orientation on the structure was examined in the V2O3 films. The majority of the films were grown on (0001)-oriented sapphire substrates, in addition films were grown on (11 20)-oriented sapphire, x and z-oriented-LiTaO3, (101)-oriented SiO2, and ZnSe substrates. V2O3 films with thicknesses of less than 450 nm grown on (0001)-oriented sapphire were shown to consist of well oriented, 10--100 nm diameter columnar grains when examined by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. Films deposited on (0001)-oriented sapphire were found to possess a preferred (0001) orientation and those deposited on (11 20)-oriented sapphire, a preferred (1120) orientation. The x-ray diffraction patterns indicated that other orientations were present for films thicker than 450 nm. The optical transmission and electrical conductivity measurements on films revealed metal-insulator transitions characteristic of single crystal V2O3, (V1-xCrx)2O 3, (V1-zTiz)2O3, V 2-yO3 and VO2. Upon cooling from room temperature, the V2O3 films displayed a reversible metal-insulator transition at about 150 K, with an increase in electrical resistivity of about 106 and a change in optical transmission of

  17. Laser-induced oxidation of Zn and Zn alloy films for direct-write grayscale photomasks

    NASA Astrophysics Data System (ADS)

    Wang, Jun; Chang, Marian; Tu, Yuqiang; Poon, David K.; Chapman, Glenn H.; Choo, Chinheng; Peng, Jun

    2006-02-01

    Previous research showed that bimetallic Bi/In and Sn/In films exhibit good grayscale levels after laser exposure due to controlled film oxidation. While giving a large alteration in optical density (OD) from 3.0OD to 0.22OD at 365 nm, Bi/In and Sn/In films show a very nonlinear OD change with laser power, making fine control of grayscale writing difficult at some gray levels. This paper studies Zn and Zn alloy films as possible candidates for improved direct-write grayscale photomask applications. Zn and Zn alloys laser oxidation have been reported previously, but without grayscale optical measurements and applications. In this paper Zn films (50 nm ~ 240 nm), Sn/Zn (100 nm), Al/Zn (100 nm), Bi/Zn (100 nm) and In/Zn (100 nm) were DC- and RF-sputtered onto glass slides and then were scanned by argon ion CW laser (488 nm). Among these films, the highest OD change, 3OD (from 3.2OD before exposure to 0.2OD after laser exposure) at 365 nm, was found in the In/Zn (25/75 nm or 84at% Zn) film. The characterization of grayscale level to laser power modulation in Zn and Zn alloy films with various thickness or composition ratios were investigated. The Zn OD change versus laser power curve is more linear than those of Sn/In and Bi/In films. In/Zn films have better characterization of grayscale level versus laser writing power than pure Zn film. Among these four Zn alloy films, Zn/Al shows most linear relation of OD at 365 nm to laser power modulation.

  18. Physical properties of zinc doped tin oxide films prepared by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Vijayalakshmi, S.; Venkataraj, S.; Subramanian, M.; Jayavel, R.

    2008-02-01

    The structural and optical properties of pure and zinc doped tin oxide (SnO2) thin films have been studied in detail. Thin films of pure and zinc doped tin oxide (Zn : SnO2) were prepared on Si(1 0 0) and quartz substrates by the spray pyrolysis technique at a substrate temperature of 400 °C. The zinc dopant concentration was varied from 0 to 25 wt%. The films were systematically characterized by different methods to understand their structural and optical property variations, and the results were correlated. The x-ray diffraction (XRD) method shows that pure SnO2 films possess tetragonal crystalline structure with the preferred (1 1 0) orientation. Upon increasing the zinc concentration the preferred orientation changes from the (1 1 0) plane to the (2 0 0) plane, and at the same time the crystalline quality was found to be deteriorated. The Raman measurements also confirm the tetragonal structure of the films for the entire range of Zn doping. High resolution scanning electron microscopy measurements reveal that upon increasing the Zn concentration, the surface morphology of the films changes continuously and the grains also deteriorate. The elemental analysis of the films measured by energy dispersive XRD spectroscopy shows that the Zn concentration in the solid film is slightly less than that of the starting solution. Optical transmittance measurements of the films reveal that the films are fully transparent in the visible region. Upon increasing the Zn concentration, the band gap of the films decreases from 3.85 to 3.57 eV. Thus, the structural study performed by XRD and Raman spectroscopy clearly indicates the incorporation of Zn ion into SnO2 lattice, and the change in the optical properties of the films was directly attributed to the effect of Zn ion incorporation into SnO2 lattice.

  19. Molecular beam deposition of high quality silicon oxide dielectric films

    NASA Astrophysics Data System (ADS)

    Chand, Naresh; Johnson, J. E.; Osenbach, J. W.; Liang, W. C.; Feldman, L. C.; Tsang, W. T.; Krautter, H. W.; Passlack, M.; Hull, R.; Swaminathan, V.

    1995-03-01

    We report a method for depositing clean, uniform and stable SiO x dielectric films with high control and reproducibility. The technique uses a molecular or chemical beam epitaxy system (MBE or CBE). The technique offers many advantages over the conventional methods such as load lock facility, accurate determination of the flux, low background contamination, in-situ process monitoring tools, and heating, rotation and tilting of the substrate. Rutherford backscattering (RBS) shows that the films deposited without oxygen are stoichiometric, 50% oxygen and 50% Si, irrespective of the deposition rate or temperature. Such SiO films have a resistivity of ≥10 13 Ω · cm and a nominal refractive index of 2 at 632.8 nm. The refractive index can be reduced by introducing a controlled amount of oxygen into the chamber to result in SiO x ( x = 1-2) films. The SiO films have uniform density and composition, and are free from voids, or any inclusions of different crystalline or amorphous phases. These SiO films are easy to pattern and their erosion rate is slower than that of SiO 2 deposited by plasma enhanced chemical vapor deposition (PECVD). During 192 h soak in 99°C deionized (DI) water, no moisture absorption was observed in SiO films deposited at a rate of 2 Å/s. Even in films deposited at 11 Å/s, the moisture content after 192 h soak in 99°C DI water was about one third the moisture content of an as-deposited typical PECVD SiO 2 film, indicating that the SiO films are highly resistant to moisture absorption and the film quality improves with reducing deposition rate. The insulating, mechanical and optical properties of SiO x films make them suitable for many applications such as surface passivation, mask for processing and facet coating of lasers. The process can be easily integrated with MBE/CBE which would greatly simplify and improve the III-V semiconductor processing. It may also be possible to deposit such dielectric films by CBE using gaseous compound sources.

  20. Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films

    PubMed Central

    Taz, H.; Sakthivel, T.; Yamoah, N. K.; Carr, C.; Kumar, D.; Seal, S.; Kalyanaraman, R.

    2016-01-01

    We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R = 0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 × 10−4 Ω-cm and ~200 Ω/sq respectively), and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R < 11.9) also correlated well with the absence of any metallic Fe0 oxidation state in the R = 0.6 case as well as a significantly higher fraction of oxidized Dy. The combination of amorphous microstructure and room temperature electronic and magnetic properties could lead to the use of the material in multiple applications, including as a transparent conductor, active material in thin film transistors for display devices, and in spin-dependent electronics. PMID:27298196

  1. Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films

    NASA Astrophysics Data System (ADS)

    Taz, H.; Sakthivel, T.; Yamoah, N. K.; Carr, C.; Kumar, D.; Seal, S.; Kalyanaraman, R.

    2016-06-01

    We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R = 0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 × 10‑4 Ω-cm and ~200 Ω/sq respectively), and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R < 11.9) also correlated well with the absence of any metallic Fe0 oxidation state in the R = 0.6 case as well as a significantly higher fraction of oxidized Dy. The combination of amorphous microstructure and room temperature electronic and magnetic properties could lead to the use of the material in multiple applications, including as a transparent conductor, active material in thin film transistors for display devices, and in spin-dependent electronics.

  2. Oxidation of the Ru(0001) surface covered by weakly bound, ultrathin silicate films

    NASA Astrophysics Data System (ADS)

    Emmez, Emre; Anibal Boscoboinik, J.; Tenney, Samuel; Sutter, Peter; Shaikhutdinov, Shamil; Freund, Hans-Joachim

    2016-04-01

    Bilayer silicate films grown on metal substrates are weakly bound to the metal surfaces, which allows ambient gas molecules to intercalate the oxide/metal interface. In this work, we studied the interaction of oxygen with Ru(0001) supported ultrathin silicate and aluminosilicate films at elevated O2 pressures (10- 5-10 mbar) and temperatures (450-923 K). The results show that the silicate films stay essentially intact under these conditions, and oxygen in the film does not exchange with oxygen in the ambient. O2 molecules readily penetrate the film and dissociate on the underlying Ru surface underneath. The silicate layer does however strongly passivate the Ru surface towards RuO2(110) oxide formation that readily occurs on bare Ru(0001) under the same conditions. The results indicate considerable spatial effects for oxidation reactions on metal surfaces in the confined space at the interface. Moreover, the aluminosilicate films completely suppress the Ru oxidation, providing some rationale for using crystalline aluminosilicates in anti-corrosion coatings.

  3. Effects of sputtering power on properties of copper oxides thin films deposited on glass substrates

    SciTech Connect

    Ooi, P. K.; Ng, S. S.; Abdullah, M. J.

    2015-04-24

    Copper oxides are deposited by radio frequency sputtering using copper target in the mixture of argon and oxygen gasses. The structural and optical properties of the copper oxides deposited at different sputtering powers have been investigated. All the films are single phase polycrystalline. At low RF power (100 W), the film is monoclinic structure of cupric oxide (CuO). Meanwhile, the films are cubic structure of cuprous oxide (Cu2O) at higher RF power. Field emission scanning electron microscopy images show the films have different morphologies with small grain size and consist of a lot of voids. The analysis of energy dispersive X-ray spectroscopy shows that the ratio of Cu to O is increased as the RF power increased. From the ultraviolet–visible spectroscopy, the films have a broad absorption edge in the range of 300–500 nm. The band gap of the films grown at RF power of 100 W, and 120 W and above, were 1.18 eV and 2.16 eV, respectively.

  4. Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films.

    PubMed

    Taz, H; Sakthivel, T; Yamoah, N K; Carr, C; Kumar, D; Seal, S; Kalyanaraman, R

    2016-01-01

    We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R = 0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 × 10(-4) Ω-cm and ~200 Ω/sq respectively), and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R < 11.9) also correlated well with the absence of any metallic Fe(0) oxidation state in the R = 0.6 case as well as a significantly higher fraction of oxidized Dy. The combination of amorphous microstructure and room temperature electronic and magnetic properties could lead to the use of the material in multiple applications, including as a transparent conductor, active material in thin film transistors for display devices, and in spin-dependent electronics. PMID:27298196

  5. Thermal transport properties of polycrystalline tin-doped indium oxide films

    SciTech Connect

    Ashida, Toru; Miyamura, Amica; Oka, Nobuto; Sato, Yasushi; Shigesato, Yuzo; Yagi, Takashi; Taketoshi, Naoyuki; Baba, Tetsuya

    2009-04-01

    Thermal diffusivity of polycrystalline tin-doped indium oxide (ITO) films with a thickness of 200 nm has been characterized quantitatively by subnanosecond laser pulse irradiation and thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) films were prepared on a fused silica substrate by dc magnetron sputtering using an oxide ceramic ITO target (90 wt %In{sub 2}O{sub 3} and 10 wt %SnO{sub 2}). The resistivity and carrier density of the ITO films ranged from 2.9x10{sup -4} to 3.2x10{sup -3} {omega} cm and from 1.9x10{sup 20} to 1.2x10{sup 21} cm{sup -3}, respectively. The thermal diffusivity of the ITO films was (1.5-2.2)x10{sup -6} m{sup 2}/s, depending on the electrical conductivity. The thermal conductivity carried by free electrons was estimated using the Wiedemann-Franz law. The phonon contribution to the heat transfer in ITO films with various resistivities was found to be almost constant ({lambda}{sub ph}=3.95 W/m K), which was about twice that for amorphous indium zinc oxide films.

  6. Optimization of Dimensionless Figure of Merit in Oxide Thin Film Thermoelectrics

    NASA Astrophysics Data System (ADS)

    Osborne, Daniel; Huxtable, Scott; Tiwari, Ashutosh; Abiade, Jeremiah

    2010-03-01

    The ability of uniquely functional thermoelectric materials to convert waste heat directly into electricity is critical considering the global energy economy. Profitable, energy-efficient thermoelectrics possess thermoelectric figures of merit ZT >= 1. We examined the effect of metal nanoparticle -- oxide film interfaces on the thermal conductivity κ and Seebeck coefficient S in bilayer and multilayer thin film oxide thermoelectrics in an effort to improve the dimensionless figure of merit ZT. Since a thermoelectric's figure of merit ZT is directly proportional to S/κ, reducing κ and increasing S are key strategies to optimize ZT. We reduced κ by phonon scattering due to the inclusion of metal nanoparticles in the bulk of the thermoelectric thin film, and increased S due to energy-dependent electron scattering at the metal - oxide interfaces. Doped strontium titanate (STO) thin film/Au nanoparticle composites were synthesized by alternate ablation of Au and Nb-doped STO targets during pulsed laser deposition. Characterization of the thermoelectric films involve XRD, XPS, and TEM analyses, Seebeck coefficient measurements, and also measurements of the thermal conductivity via time-domain thermoreflectance. The measured thermal conductivities and Seebeck coefficients of the thin films shows a strong dependence on the nanoscale interfaces of the films.

  7. Protecting BOPP film from UV degradation with an atomic layer deposited titanium oxide surface coating

    NASA Astrophysics Data System (ADS)

    Lahtinen, Kimmo; Maydannik, Philipp; Seppänen, Tarja; Cameron, David C.; Johansson, Petri; Kotkamo, Sami; Kuusipalo, Jurkka

    2013-10-01

    Titanium oxide layers were deposited onto a BOPP film by atomic layer deposition in order to prevent UV degradation of the film. The coatings were deposited in a low-temperature process at 80 °C by using tetrakis(dimethylamido)titanium and ozone as titanium and oxygen precursors, respectively. UV block characteristics of the coatings and their effect on the polymer were measured by using UV-vis and IR spectrometry, and differential scanning calorimetry. According to the results, the coatings provided a considerable decrease in the photodegradation of the BOPP film during UV exposure. IR spectra showed that during a 6-week UV exposure, a 67 nm titanium oxide coating was able to almost completely prevent the formation of photodegradation products in the film. The mechanical properties of the film were also protected by the coating, but as opposed to what the IR study suggested they were still somewhat compromised by the UV light. After a 6-week exposure, the tensile strength and elongation at break of the 67 nm titanium oxide coated film decreased to half of the values measured before the treatment. This should be compared to the complete degradation suffered by the uncoated base sheet already after only 4 weeks of treatment. The results show that nanometre scale inorganic films deposited by ALD show a promising performance as effective UV protection for BOPP substrates.

  8. Structure, stability and electrochromic properties of polyaniline film covalently bonded to indium tin oxide substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Wenzhi; Ju, Wenxing; Wu, Xinming; Wang, Yan; Wang, Qiguan; Zhou, Hongwei; Wang, Sumin; Hu, Chenglong

    2016-03-01

    Indium tin oxide (ITO) substrate was modified with 4-aminobenzylphosphonic acid (ABPA), and then the polyaniline (PANI) film covalently bonded to ITO substrate was prepared by the chemical oxidation polymerization. X-ray photoelectron spectroscopy (XPS), attenuated total reflection infrared (ATR-IR) spectroscopy, and atomic force microscopy (AFM) measurements demonstrated that chemical binding was formed between PANI and ABPA-modified ITO surface, and the maximum thickness of PANI layer is about 30 nm. The adhesive strength of PANI film on ITO substrate was tested by sonication. It was found that the film formed on the modified ITO exhibited a much better stability than that on bare one. Cyclic voltammetry (CV) and UV-vis spectroscopy measurements indicated that the oxidative potentials of PANI film on ABPA-modified ITO substrate were decreased and the film exhibited high electrochemical activities. Moreover, the optical contrast increased from 0.58 for PANI film (without ultrasound) to 1.06 for PANI film (after ultrasound for 60 min), which had an over 83% enhancement. The coloration time was 20.8 s, while the bleaching time was 19.5 s. The increase of electrochromic switching time was due to the lower ion diffusion coefficient of the large cation of (C4H9)4N+ under the positive and negative potentials as comparison with the small Li+ ion.

  9. Growth, microstructure and supercapacitive performance of copper oxide thin films prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Purusottam Reddy, B.; Sivajee Ganesh, K.; Hussain, O. M.

    2016-02-01

    The supercapacitive performance of copper oxide thin film electrodes mainly relies on micro structure, phase, surface area and conductivity which in turn depend on the deposition technique and process parameters during growth. In the present study, thin films of copper oxide were prepared by RF magnetron sputtering on stainless steel substrates keeping O2-to-Ar ratio at 1:11 and RF power at 250 W and varying the substrate temperature. The microstructure and the induced phase changes in copper oxide films are observed to be strongly influenced by the substrate temperature since the relaxation time, surface diffusion and surface structural changes are thermally activated. The XRD and Raman studies reveal that the films deposited at low substrate temperature (<200 °C) exhibited CuO, while the films deposited at substrate temperature >200 °C exhibited Cu2O phase. The films prepared at 350 °C exhibited reflections correspond to cubic Cu2O with predominant (111) orientation. The estimated maximum grain size from AFM studies was 72 nm with surface roughness of 51 nm. These films exhibited a highest areal capacitance of 30 mF cm-2 at scan rate of 5 mV s-1. The galvanostatic charge-discharge studies demonstrated high specific capacitance of 908 F g-1 at 0.5 mA cm-2 current density with 80 % of its initial capacity retention even after 1000 cycles.

  10. Direct Measurement of Oxygen Incorporation into Thin Film Oxides at Room Temperature Upon Ultraviolet Phton Irradiation

    SciTech Connect

    Tsuchiya, Masaru; Shutthanandan, Vaithiyalingam; Engelhard, Mark H.; Ramanathan, Shriram

    2008-12-31

    Minute changes in oxygen concentration in complex oxides even of the order of ~0.001% can significantly influence functional properties ranging from onset of superconductivity to colossal dielectric constant and ferroic response. In this letter, we report on direct experimental measurement of enhanced oxygen incorporation into ultra-thin oxide films at room temperature under gentle UV photon exposure. Oxygen concentration changes in nanoscale yttria-doped-zirconia (YDZ) films grown on Ge substrate were quantified using the 16O(d,p)17O nuclear reaction. The oxygen concentration was consistently ~ 3 % larger in UV irradiated YDZ films compared to as-grown YDZ films and can be kinetically controlled. Possible incorporation mechanisms are discussed. This suggests a novel approach to modulate oxygen concentration in complex oxides. There is tremendous interest in the science and applications of ultra-thin oxide films, such as electrolyte membranes for solid oxide fuel cells 1, high-dielectric constant (high-κ) oxides for metal-oxide-semiconductor (MOS) devices 2 and multi-ferroics 3. In addition, thin film oxides also serve as model systems to investigate space charge effects on carrier transport and strongly correlated phenomena such as phase transitions. An overarching problem of central importance is the controlled synthesis of oxide films and how they impact functional properties. Particularly, the role of oxygen vacancies or non-stoichiometry has been found to be crucial in this regard. Examples include large magneto resistance effect and metal-to-insulator transition introduced by reducing oxygen stoichiometry of poly crystalline La0.67Ba0.33MnOz 3, nonsuperconducting-to-superconducting transformation by minute amount of oxygen incorporation upon annealing YBa2Cu3O7-δ(YBCO) films 4, and blue light emission at room temperature in oxygen deficient SrTiO3 (STO) 5, 6. These studies revealed

  11. Zinc-oxide nanorod/copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    NASA Astrophysics Data System (ADS)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin

    2014-11-01

    A novel p- n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 °C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 °C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 °C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  12. Fluorination of epitaxial oxides: Creating ferrite and nickelate oxyfluoride films

    NASA Astrophysics Data System (ADS)

    May, Steven; Moon, Eun; Xie, Yujun; Keavney, David; Goebel, Justin; Laird, Eric; Li, Christopher

    2013-03-01

    In ABO3 perovskites, the physical properties are directly coupled to the nominal valence state of the B-site cation. In epitaxial thin films, the dominant strategy to control B-site valence is through the selection of a di- or trivalent cation on the A-site. However, this approach is limited, particularly when electron doping on the B-site is desired. Here we report a simple method for realizing oxyfluoride films, where the substitution of F for O is expected to reduce the B-site valence, providing a new means to tune electronic, optical and magnetic properties in thin films. Fluorination is achieved by spin coating an oxygen deficient film with poly(vinylidene fluoride). The film/polymer bilayer is then annealed, promoting the diffusion of F into the film. We have used this method to synthesize SrFeO3-δFδ and LaNiO3-δFδ (δ ? 0.5) films, as confirmed by x-ray photoemission spectroscopy and x-ray absorption spectroscopy. This work is supported by the U. S. Army Research Office under grant number W911NF-12-1-0132. Work at the Advanced Photon Source is supported by the U.S. Department of Energy (DOE), Office of Basic Energy Sciences under contract DE-AC02-06CH11357.

  13. Impedance spectroscopy of the oxide films formed during high temperature oxidation of a cobalt-plated ferritic alloy

    NASA Astrophysics Data System (ADS)

    Velraj, S.; Zhu, J. H.; Painter, A. S.; Du, S. W.; Li, Y. T.

    2014-02-01

    Impedance spectroscopy was used to evaluate the oxide films formed on cobalt-coated Crofer 22 APU ferritic stainless steel after thermal oxidation at 800 °C in air for different times (i.e. 2, 50, 100 and 500 h). Impedance spectra of the oxide films exhibited two or three semicircles depending on the oxidation time, which correspond to the presence of two or three individual oxide layers. Coupled with scanning electron microscopy/energy-dispersive spectroscopy (SEM/EDS) and X-ray diffraction (XRD), the individual oxide layer corresponding to each semicircle was determined unambiguously. Impedance spectrum analysis of the oxide films formed on the sample after thermal exposure at 800 °C in air for 2 h led to the identification of the low-frequency and high-frequency semicircles as being from Cr2O3 and Co3O4, respectively. SEM/EDS and XRD analysis of the 500-h sample clearly revealed the presence of three oxide layers, analyzed to be Co3-xCrxO4, CoCr2O4, and Cr2O3. Although the SEM images of the 50-h and 100-h samples did not clearly show the CoCr2O4 layer, impedance plots implied their presence. The oxide scales were assigned to their respective semicircles and the electrical properties of Co3-xCrxO4, CoCr2O4 and Cr2O3 were determined from the impedance data.

  14. Surface morphology of ultrathin graphene oxide films obtained by the SAW atomization

    NASA Astrophysics Data System (ADS)

    Balachova, Olga V.; Balashov, Sergey M.; Costa, Carlos A. R.; Pavani Filho, A.

    2015-08-01

    Lately, graphene oxide (GO) thin films have attracted much attention: they can be used as humidity-sensitive coatings in the surface acoustic wave (SAW) sensors; being functionalized, they can be used in optoelectronic or biodevices, etc. In this research we study surface morphology of small-area thin GO films obtained on Si and quartz substrates by deposition of very small amounts of H2O-GO aerosols produced by the SAW atomizer. An important feature of this method is the ability to work with submicrovolumes of liquids during deposition that provides relatively good control over the film thickness and quality, in particular, minimization of the coffee ring effect. The obtained films were examined using AFM and electron microscopy. Image analysis showed that the films consist of GO sheets of different geometry and sizes and may form discrete or continuous coatings at the surface of the substrates with the minimum thickness of 1.0-1.8 nm which corresponds to one or two monolayers of GO. The thickness and quality of the deposited films depend on the parameters of the SAW atomization (number of atomized droplets, a volume of the initial droplet, etc.) and on sample surface preparation (activation in oxygen plasma). We discuss the structure of the obtained films, uniformity and the surface coverage as a function of parameters of the film deposition process and sample preparation. Qualitative analysis of adhesion of GO films is made by rinsing the samples in DI water and subsequent evaluation of morphology of the remained films.

  15. Laser patterning of very thin indium tin oxide thin films on PET substrates

    NASA Astrophysics Data System (ADS)

    McDonnell, C.; Milne, D.; Prieto, C.; Chan, H.; Rostohar, D.; O'Connor, G. M.

    2015-12-01

    This work investigates the film removal properties of 30 nm thick Indium Tin Oxide (ITO) thin films, on flexible polyethylene terephthalate (PET) substrates, using 355, 532 and 1064 nm nanosecond pulses (ns), and 343 and 1064 nm femtosecond pulses. The ablation threshold was found to be dependent on the applied wavelength and pulse duration. The surface topography of the laser induced features were examined using atomic force microscopy across the range of wavelengths and pulse durations. The peak temperature, strain and stress tensors were examined in the film and substrate during laser heating, using finite element computational methods. Selective removal of the thin ITO film from the polymer substrate is possible at all wavelengths except at 266 nm, were damage to substrate is observed. The damage to the substrate results in periodic surface structures (LIPPS) on the exposed PET, with a period of twice the incident wavelength. Fragmented crater edges are observed at all nanosecond pulse durations. Film removal using 1030 nm femtosecond pulses results in clean crater edges, however, minor 5 nm damage to the substrate is also observed. The key results show that film removal for ITO on PET, is through film de-lamination across all wavelengths and pulse durations. Film de-lamination occurs due to thermo-elastic stress at the film substrate interface region, as the polymer substrate expands under heating from direct laser absorption and heat conduction across the film substrate interface.

  16. Electrosprayed Metal Oxide Semiconductor Films for Sensitive and Selective Detection of Hydrogen Sulfide

    PubMed Central

    Ghimbeu, Camelia Matei; Lumbreras, Martine; Schoonman, Joop; Siadat, Maryam

    2009-01-01

    Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO2), tungsten oxide (WO3) and indium oxide (In2O3) were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD). The morphology studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM) shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD) proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H2S (10 ppm) at low operating temperatures (100 and 200 °C) and the best response in terms of Rair/Rgas is given by Cu-SnO2 films (2500) followed by WO3 (1200) and In2O3 (75). Moreover, all the films exhibit no cross-sensitivity to other reducing (SO2) or oxidizing (NO2) gases. PMID:22291557

  17. Ion beam deposition and surface characterization of thin multi-component oxide films during growth.

    SciTech Connect

    Krauss, A.R.; Im, J.; Smentkowski, V.; Schultz, J.A.; Auciello, O.; Gruen, D.M.; Holocek, J.; Chang, R.P.H.

    1998-01-13

    Ion beam deposition of either elemental targets in a chemically active gas such as oxygen or nitrogen, or of the appropriate oxide or nitride target, usually with an additional amount of ambient oxygen or nitrogen present, is an effective means of depositing high quality oxide and nitride films. However, there are a number of phenomena which can occur, especially during the production of multicomponent films such as the ferroelectric perovskites or high temperature superconducting oxides, which make it desirable to monitor the composition and structure of the growing film in situ. These phenomena include thermodynamic (Gibbsian), and oxidation or nitridation-driven segregation, enhanced oxidation or nitridation through production of a highly reactive gas phase species such as atomic oxygen or ozone via interaction of the ion beam with the target, and changes in the film composition due to preferential sputtering of the substrate via primary ion backscattering and secondary sputtering of the film. Ion beam deposition provides a relatively low background pressure of the sputtering gas, but the ambient oxygen or nitrogen required to produce the desired phase, along with the gas burden produced by the ion source, result in a background pressure which is too high by several orders of magnitude to perform in situ surface analysis by conventional means. Similarly, diamond is normally grown in the presence of a hydrogen atmosphere to inhibit the formation of the graphitic phase.

  18. Electrosprayed metal oxide semiconductor films for sensitive and selective detection of hydrogen sulfide.

    PubMed

    Ghimbeu, Camelia Matei; Lumbreras, Martine; Schoonman, Joop; Siadat, Maryam

    2009-01-01

    Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO(2)), tungsten oxide (WO(3)) and indium oxide (In(2)O(3)) were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD). The morphology studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM) shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD) proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H(2)S (10 ppm) at low operating temperatures (100 and 200 °C) and the best response in terms of R(air)/R(gas) is given by Cu-SnO(2) films (2500) followed by WO(3) (1200) and In(2)O(3) (75). Moreover, all the films exhibit no cross-sensitivity to other reducing (SO(2)) or oxidizing (NO(2)) gases. PMID:22291557

  19. Oxide films: low-temperature deposition and crystallization

    NASA Astrophysics Data System (ADS)

    Park, Sangmoon; Herman, Gregory S.; Keszler, Douglas A.

    2003-10-01

    Thin films of CeO 2 and (Ce,Sm)O 2 have been prepared by using the SILAR method of deposition in conjunction with hydrothermal and high-temperature annealing. Low-temperature, low-pressure hydrothermal annealing of amorphous Mn:Zn 2GeO 4 films has lead to the growth of grains having edge lengths near 1 μm. Thick films of crystalline Zn 2SiO 4 exhibiting limited cracking have been prepared by a doctor-blade method also in conjunction with hydrothermal dehydration and annealing.

  20. Electrical and optical properties of molybdenum doped zinc oxide films prepared by reactive RF magnetron sputtering

    SciTech Connect

    Reddy, R. Subba; Sreedhar, A.; Uthanna, S.

    2015-08-28

    Molybdenum doped zinc oxide (MZO) films were deposited on to glass substrates held at temperatures in the range from 303 to 673 K by reactive RF magnetron sputtering method. The chemical composition, crystallographic structure and surface morphology, electrical and optical properties of the films were determined. The films contained the molybdenum of 2.7 at. % in ZnO. The films deposited at 303 K were of X-ray amorphous. The films formed at 473 K were of nanocrystalline in nature with wurtzite structure. The crystallite size of the films was increased with the increase of substrate temperature. The optical transmittance of the films was in the visible range was 80–85%. The molybdenum (2.7 at %) doped zinc oxide films deposited at substrate temperature of 573 K were of nanocrystalline with electrical resistivity of 7.2×10{sup −3} Ωcm, optical transmittance of 85 %, optical band gap of 3.35 eV and figure of merit 30.6 Ω{sup −1}cm{sup −1}.

  1. Fabrication of (110)-one-axis-oriented perovskite-type oxide thin films and their application to buffer layer

    NASA Astrophysics Data System (ADS)

    Sato, Tomoya; Ichinose, Daichi; Kimura, Junichi; Inoue, Takaaki; Mimura, Takanori; Funakubo, Hiroshi; Uchiyama, Kiyoshi

    2016-10-01

    BaCe0.9Y0.1O3-δ (BCYO) and SrZr0.8Y0.2O3-δ (SZYO) thin films of perovskite-type oxides were deposited on (111)Pt/TiO x /SiO2/(100)Si substrates. X-ray diffraction patterns showed that the (110)-oriented BCYO and SZYO thin films were grown on (111)Pt/Si substrates directly without using any buffer layers. Thin films of SrRuO3 (SRO), a conductive perovskite-type oxide, were also deposited on those films and highly (110)-oriented SRO thin films were obtained. We believe that this (110)-oriented SRO works as a buffer layer to deposit (110)-oriented perovskite-type ferroelectric oxide thin films as well as a bottom electrode and can modify the ferroelectric properties of the oxide thin films by controlling their crystallographic orientations.

  2. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-01

    Gallium oxide and more particularly β-Ga2O3 matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  3. Influence of controlled surface oxidation on the magnetic anisotropy of Co ultrathin films

    SciTech Connect

    Di, N.; Maroun, F. Allongue, P.; Kubal, J.; Zeng, Z.; Greeley, J.

    2015-03-23

    We studied the influence of controlled surface-limited oxidation of electrodeposited epitaxial Co(0001)/Au(111) films on their magnetic anisotropy energy using real time in situ magneto optical Kerr effect and density functional theory (DFT) calculations. We investigated the Co first electrochemical oxidation step which we demonstrate to be completely reversible and determined the structure of this oxide layer. We show that the interface magnetic anisotropy of the Co film increases by 0.36 erg/cm{sup 2} upon Co surface oxidation. We performed DFT calculations to determine the different surface structures in a wide potential range as well as the charge transfer at the Co surface. Our results suggest that the magnetic anisotropy change is correlated with a positive charge increase of 0.54 e{sup −} for the Co surface atom upon oxidation.

  4. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    SciTech Connect

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-15

    Gallium oxide and more particularly {beta}-Ga{sub 2}O{sub 3} matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  5. Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

    PubMed Central

    Sun, Ke; Saadi, Fadl H.; Lichterman, Michael F.; Hale, William G.; Wang, Hsin-Ping; Zhou, Xinghao; Plymale, Noah T.; Omelchenko, Stefan T.; He, Jr-Hau; Papadantonakis, Kimberly M.; Brunschwig, Bruce S.; Lewis, Nathan S.

    2015-01-01

    Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g). PMID:25762067

  6. Reduction of a thin chromium oxide film on Inconel surface upon treatment with hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Vesel, Alenka; Mozetic, Miran; Balat-Pichelin, Marianne

    2016-11-01

    Inconel samples with a surface oxide film composed of solely chromium oxide with a thickness of approximately 700 nm were exposed to low-pressure hydrogen plasma at elevated temperatures to determine the suitable parameters for reduction of the oxide film. The hydrogen pressure during treatment was set to 60 Pa. Plasma was created by a surfaguide microwave discharge in a quartz glass tube to allow for a high dissociation fraction of hydrogen molecules. Auger electron depth profiling (AES) was used to determine the decay of the oxygen in the surface film and X-ray diffraction (XRD) to measure structural modifications. During hydrogen plasma treatment, the oxidized Inconel samples were heated to elevated temperatures. The reduction of the oxide film started at temperatures of approximately 1300 K (considering the emissivity of 0.85) and the oxide was reduced in about 10 s of treatment as revealed by AES. The XRD showed sharper substrate peaks after the reduction. Samples treated in hydrogen atmosphere under the same conditions have not been reduced up to approximately 1500 K indicating usefulness of plasma treatment.

  7. Nanoscale characterization of oxidized ultrathin Co-films by ballistic electron emission microscopy

    NASA Astrophysics Data System (ADS)

    Eng Johnson Goh, Kuan; Wang, Simin; Tan, Siew Ting Melissa; Zhang, Zheng; Kawai, Hiroyo; Troadec, Cedric; Ng, Vivian

    2016-01-01

    In anticipation of devices scaling down further to the few nanometer regime, the ability to characterize material localized within the few nm of a critical device region poses a current challenge, particularly when the material is already buried under other material layers such as under a metal contact. Conventional techniques typically provide indirect information of the nanoscale material quality through a surface or volume averaging perspective. Here we present a study of local (nm range) oxidation in few nanometer thick Co-films using Ballistic Electron Emission Microscopy/Spectroscopy (BEEM/BEES). Co films were grown on n-Si(111) substrates, oxidized in ambient atmosphere before capping with a thin Au film to prevent further oxidation and enable BEEM measurements. In addition to BEES, the temporal progression of Co oxidation was also tracked by X-ray Photoelectron Spectroscopy. At room temperature, we report that the electron injection thresholds are sufficiently different for local regions with Co and oxidized-Co enabling their distinction in BEEM measurements. Our results demonstrate the possibility of using BEEM for nanoscale spatial mapping of the oxidized regions in Co-films, and this can provide critical information toward the successful fabrication of next generation Co-based nano-devices.

  8. Novel Low Temperature Processing for Enhanced Properties of Ion Implanted Thin Films and Amorphous Mixed Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Vemuri, Rajitha

    This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates. Volumetric heating of the sample in the presence of the microwave field facilitates quick absorption of radiation to promote recrystallization at the amorphous-crystalline interface, apart from electrical activation of the dopants due to relocation to the substitutional sites. Structural and electrical characterization confirm recrystallization of heavily implanted Si within 40 seconds anneal time with minimum dopant diffusion compared to rapid thermal annealed samples. The use of microwave anneal to improve performance of multilayer thin film devices, e.g. thin film transistors (TFTs) requires extensive study of interaction of individual layers with electromagnetic radiation. This issue has been addressed by developing detail understanding of thin films and interfaces in TFTs by studying reliability and failure mechanisms upon extensive stress test. Electrical and ambient stresses such as illumination, thermal, and mechanical stresses are inflicted on the mixed oxide based thin film transistors, which are explored due to high mobilities of the mixed oxide (indium zinc oxide, indium gallium zinc oxide) channel layer material. Semiconductor parameter analyzer is employed to extract transfer characteristics, useful to derive mobility, subthreshold, and threshold voltage parameters of the transistors. Low temperature post processing anneals compatible with polymer substrates are performed in several ambients (oxygen, forming gas and vacuum) at 150 °C as a preliminary step. The analysis of the results pre and post low temperature anneals using device physics fundamentals

  9. Electrochromic properties of tungsten-titanium oxide films.

    PubMed

    Chen, Ya-Chi; Lin, Tai-Nan; Chen, Tien-Lai; Li, Yun-Da; Weng, Ko-Wei

    2012-02-01

    The last decade has seen great in electrochromic (EC) technology for smart windows and displays. In this study, WTiOx films formed from TiO2 and WO3 were deposited onto ITO glass with a sheet resistance of 10 Omega cm and on silicon substrates, by pulsed magnetron sputtering using a W and Ti alloy target. The films were deposited at plasma powers 100, 200, 300, 400 and 500 W using a gaseous Ar (150 sccm)/O2 (50 sccm) mixture; the working pressure was fixed at 5E-2 torr. The film thickness increased with the plasma power. However, increasing the plasma power yielded a more crystalline structure with poorer electrochromic properties. The influence of Ti doping and plasma power on the structural, optical and electrochromic properties of the WTiOx thin films was studied. WTiOx films grown at various plasma powers of under 400 W were amorphous. Deposition of films at 400 W yielded the optimal electrochromic properties, with high optical modulation, high coloration efficiency and the lowest color memory effect at wavelengths 400, 550 and 800 nm. An XPS study indicated that Ti can stabilize the valence state of W6+. The improvements caused by the doping with Ti were tested: an optical density (OD) of close to 0.85 and a maximum delta T (%) at 400 nm of 25.8%, at 550 nm of 52.5% and at 800 nm (in the near-IR region) of 62.4%. PMID:22629942

  10. Optical constants of amorphous, transparent titanium-doped tungsten oxide thin films.

    PubMed

    Ramana, C V; Baghmar, Gaurav; Rubio, Ernesto J; Hernandez, Manuel J

    2013-06-12

    We report on the optical constants and their dispersion profiles determined from spectroscopic ellipsometry (SE) analysis of the 20%-titanium (Ti) doped of tungsten oxide (WO3) thin films grown by sputter-deposition. The Ti-doped WO3 films grown in a wide range of temperatures (25-500 °C) are amorphous and optically transparent. SE data indicates that there is no significant interdiffusion at the film-substrate interface for a W-Ti oxide film growth of ~90 nm. The index refraction (n) at λ = 550 nm vary in the range of 2.17-2.31 with a gradual increase in growth temperature. A correlation between the growth conditions and optical constants is discussed. PMID:23682744

  11. Sodium manganese oxide thin films as cathodes for Na-ion batteries

    SciTech Connect

    Baggetto, Loic; Carroll, Kyler J; Unocic, Raymond R; Bridges, Craig A; Meng, Ying Shirley; Veith, Gabriel M

    2014-01-01

    This paper presents the fabrication and characterization of sodium manganese oxide cathode thin films for rechargeable Na-ion batteries. Layered oxide compounds of nominal compositions Na0.6MnO2 and Na1.0MnO2 have been prepared by radio frequency magnetron sputtering and post-annealing at high temperatures under various conditions. The Na0.6MnO2 thin films possess either a hexagonal or orthorhombic structure while the Na1.0MnO2 films crystallize in a monoclinic structure, as shown by X-ray diffraction and X-ray absorption spectroscopy results. The potential profiles of the film cathodes are characterized by features similar to those measured for the powders and exhibit reversible storage capacities in the range of 50-60 Ah cm-2 m-1, which correspond to about 120-140 mAh g-1, and are maintained over 80 cycles.

  12. Effects of nitrogen flow rate on the properties of indium oxide thin films.

    PubMed

    Cho, Shinho; Kim, Moonhwan

    2013-11-01

    Indium oxide thin films are deposited on glass substrates at nitrogen flow rates of 0-50% by rf reactive magnetron sputtering and are characterized for their structural, morphological, electrical, and optical properties. The experimental results showed that the control of nitrogen flow rate has a significant effect on the properties of the In2O3 thin films. The change in the preferred growth orientation from (222) to (400) planes is observed above a nitrogen flow rate of 10%. The average optical transmittance in the wavelength range of 400-1100 nm is increased from 85.4% at 0% to 86.7% at 50%, where the smallest value of the optical band gap energy is obtained. In addition to the improvement in crystallinity of the films, the nitrogen flow rate plays a crucial role in the fabrication of high-quality indium oxide films and devices. PMID:24245335

  13. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    PubMed Central

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-01-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment. PMID:27283250

  14. Fabrication of transparent cellulose acetate/graphene oxide nanocomposite film for UV shielding

    NASA Astrophysics Data System (ADS)

    Jahan, Nusrat; Khan, Wasi; Azam, Ameer; Naqvi, A. H.

    2016-05-01

    In this work, we have fabricated transparent cellulose acetate/graphene oxide nanocomposite (CAGONC) films for ultraviolet radiations (UVR) shielding. Graphene oxide (GO) was synthesized by modified Hummer's method and CAGONC films were fabricated by solvent casting method. The films were analyzed using characterization techniques like x-ray diffraction (XRD), energy dispersive x-ray (EDX) equipped scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy and ultra-violet visible (UV-VIS) spectroscopy. Four films were prepared by varying the wt% of GO (0.1wt%, 0.2wt% and 0.3wt%) with respect to cellulose acetate (CA). UV-vis measurements exhibit optical transparency in the range of 76-99% for visible light while ultra-violet radiation was substantially shielded.

  15. Performance and stress analysis of metal oxide films for CMOS-integrated gas sensors.

    PubMed

    Filipovic, Lado; Selberherr, Siegfried

    2015-01-01

    The integration of gas sensor components into smart phones, tablets and wrist watches will revolutionize the environmental health and safety industry by providing individuals the ability to detect harmful chemicals and pollutants in the environment using always-on hand-held or wearable devices. Metal oxide gas sensors rely on changes in their electrical conductance due to the interaction of the oxide with a surrounding gas. These sensors have been extensively studied in the hopes that they will provide full gas sensing functionality with CMOS integrability. The performance of several metal oxide materials, such as tin oxide (SnO2), zinc oxide (ZnO), indium oxide (In2O3) and indium-tin-oxide (ITO), are studied for the detection of various harmful or toxic cases. Due to the need for these films to be heated to temperatures between 250°C and 550°C during operation in order to increase their sensing functionality, a considerable degradation of the film can result. The stress generation during thin film deposition and the thermo-mechanical stress that arises during post-deposition cooling is analyzed through simulations. A tin oxide thin film is deposited using the efficient and economical spray pyrolysis technique, which involves three steps: the atomization of the precursor solution, the transport of the aerosol droplets towards the wafer and the decomposition of the precursor at or near the substrate resulting in film growth. The details of this technique and a simulation methodology are presented. The dependence of the deposition technique on the sensor performance is also discussed. PMID:25815445

  16. Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors

    PubMed Central

    Filipovic, Lado; Selberherr, Siegfried

    2015-01-01

    The integration of gas sensor components into smart phones, tablets and wrist watches will revolutionize the environmental health and safety industry by providing individuals the ability to detect harmful chemicals and pollutants in the environment using always-on hand-held or wearable devices. Metal oxide gas sensors rely on changes in their electrical conductance due to the interaction of the oxide with a surrounding gas. These sensors have been extensively studied in the hopes that they will provide full gas sensing functionality with CMOS integrability. The performance of several metal oxide materials, such as tin oxide (SnO2), zinc oxide (ZnO), indium oxide (In2O3) and indium-tin-oxide (ITO), are studied for the detection of various harmful or toxic cases. Due to the need for these films to be heated to temperatures between 250 °C and 550 °C during operation in order to increase their sensing functionality, a considerable degradation of the film can result. The stress generation during thin film deposition and the thermo-mechanical stress that arises during post-deposition cooling is analyzed through simulations. A tin oxide thin film is deposited using the efficient and economical spray pyrolysis technique, which involves three steps: the atomization of the precursor solution, the transport of the aerosol droplets towards the wafer and the decomposition of the precursor at or near the substrate resulting in film growth. The details of this technique and a simulation methodology are presented. The dependence of the deposition technique on the sensor performance is also discussed. PMID:25815445

  17. Properties of Transparent Zinc-Tin Oxide Conducting Films Prepared by Chemical Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Martinez, Arturo I.; Garcia, Benjamin A.; Acosta, Dwight R.

    2005-06-01

    In this work we have prepared thin films of zinc-tin oxide by the chemical spray pyrolysis method. The structural, electrical and optical properties were studied for all films as a function of the zinc content in the starting solution, yielding values of electrical resistivity (ρ), Hall mobility (μ), carrier concentration (n), and optical transmission (T) suitable for optoelectronic applications, e.g. our optimal values were ρ = 3.56×10-2 Ω cm and T = 0.77.

  18. The Surface Science of Catalysis and More, Using Ultrathin Oxide Films as Templates: A Perspective.

    PubMed

    Freund, Hans-Joachim

    2016-07-27

    Surface science has had a major influence on the understanding of processes at surfaces relevant to catalysis. Real catalysts are complex materials, and in order to approach an understanding at the atomic level, it is necessary in a first step to drastically reduce complexity and then systematically increase it again in order to capture the various structural and electronic factors important for the function of the real catalytic material. The use of thin oxide films as templates to mimic three-dimensional supports as such or for metal particles as well as to model charge barriers turns out to be appropriate to approach an understanding of metal-support interactions. Thin oxide films also exhibit properties in their own right that turn out to be relevant in catalysis. Thin oxide film formation may also be used to create unique two-dimensional materials. The present perspective introduces the subject using case studies and indicates possible routes to further apply this approach successfully.

  19. Environment-dependent photochromism of silver nanoparticles interfaced with metal-oxide films

    NASA Astrophysics Data System (ADS)

    Fu, Shencheng; Sun, Shiyu; Zhang, Xintong; Zhang, Cen; Zhao, Xiaoning; Liu, Yichun

    2015-12-01

    Different metal-oxide films were fabricated by radio frequency magnetron sputtering. Further, a layer of silver nanoparticles (NPs) was deposited on the surface of the substrate by physical sputtering. Photochromism of the silver/metal-oxide nanocomposite films were investigated in situ under the irradiation of a linearly-polarized green laser beam (532 nm). Silver NPs were found to be easily photo-dissolved on the n-type metal-oxide films. By changing experimental conditions, it was also verified that both oxygen and humidity accelerate the photochromism of silver NPs. The corresponding micro-mechanism on charge separation and Ag+-ions mobility was also discussed. These results provided theoretical basis for the application of silver NPs in biological, chemical and medical areas.

  20. In2O3-based multicomponent metal oxide films and their prospects for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Korotcenkov, G.; Brinzari, V.; Cho, B. K.

    2016-02-01

    Thermoelectric properties of In2O3-SnO2-based multi-component metal oxide films formed by spray pyrolysis method are studied. It is shown that the introduction of additional components such as gallium and zinc can control the parameters of the deposited layers. At that, the doping with gallium is more effective for optimization of the efficiency of the thermoelectric conversion. The explanation of the observed changes in the electro-physical and thermoelectric properties of the films at the composition change is given. It is found that the main changes in the properties of multicomponent metal oxide films take place at concentrations of dopants which correspond to their limit solubility in the dominant oxide.

  1. Fabrication of ion conductive tin oxide-phosphate amorphous thin films by atomic layer deposition

    SciTech Connect

    Park, Suk Won; Jang, Dong Young; Kim, Jun Woo; Shim, Joon Hyung

    2015-07-15

    This work reports the atomic layer deposition (ALD) of tin oxide-phosphate films using tetrakis(dimethylamino)tin and trimethyl phosphate as precursors. The growth rates were 1.23–1.84 Å/cycle depending upon the deposition temperature and precursor combination. The ionic conductivity of the ALD tin oxide-phosphate films was evaluated by cross-plane impedance measurements in the temperature range of 50–300 °C under atmospheric air, with the highest conductivity measured as 1.92 × 10{sup −5} S cm{sup −1} at 300 °C. Furthermore, high-resolution x-ray photoelectron spectroscopy exhibited two O1s peaks that were classified as two subpeaks of hydroxyl ions and oxygen ions, revealing that the quantity of hydroxyl ions in the ALD tin oxide-phosphate films influences their ionic conductivity.

  2. Nickel vacancy behavior in the electrical conductance of nonstoichiometric nickel oxide film

    SciTech Connect

    Kim, Dong Soo; Lee, Hee Chul

    2012-08-01

    Nickel vacancy behavior in electrical conductance is systematically investigated using various analysis methods on nickel oxide films deposited at different oxygen partial pressures. The results of Rutherford backscattering, x-ray diffraction, and Auger electron spectroscopy analyses demonstrate that the sputtered nickel oxide films are nickel-deficient. Through the deconvolution of Ni2p and O1s spectra in the x-ray photoelectron spectroscopy data, the number of Ni{sup 3+} ions is found to increase with the O{sub 2} ratio during the deposition. According to the vacancy model, nickel vacancies created from the non-stoichiometry are concluded to produce Ni{sup 3+} ions which lead to an increment of the conductivity of the nickel oxide films due to the increase of the hole concentration.

  3. Molybdenum as a contact material in zinc tin oxide thin film transistors

    SciTech Connect

    Hu, W.; Peterson, R. L.

    2014-05-12

    Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 Ω-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34 μm, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.

  4. Weldability of mild steel with oxide film in high power CO2 laser welding

    NASA Astrophysics Data System (ADS)

    Ono, Kazuhiko; Adachi, Kaoru; Miyamoto, Isamu

    2003-03-01

    Influence of oxide film, such as laser cutting edge or mill-scale, on solidification crack formation in high power CO2 laser of mild steel was investigated. Laser welding test of butt joints were performed. Examinations were made on the solidification crack formation. The results of these experiments lead to understanding that (1) excess oxygen supplied from oxide film causes solidification crack as well as porosity and (2) influence of oxygen content is bigger than that of sulfur when there is excess oxygen in the weld. It is considered that these are attributed to change of molten metal flow and drop of melting point such as sulfur. These results suggest that reduction of oxide film thickness or killing oxygen activity by supplementary deoxidizing elements may produce acceptable weld.

  5. Titanium-silicon oxide film structures for polarization-modulated infrared reflection absorption spectroscopy

    PubMed Central

    Dunlop, Iain E.; Zorn, Stefan; Richter, Gunther; Srot, Vesna; Kelsch, Marion; van Aken, Peter A.; Skoda, Maximilian; Gerlach, Alexander; Spatz, Joachim P.; Schreiber, Frank

    2010-01-01

    We present a titanium-silicon oxide film structure that permits polarization modulated infrared reflection absorption spectroscopy on silicon oxide surfaces. The structure consists of a ~6 nm sputtered silicon oxide film on a ~200 nm sputtered titanium film. Characterization using conventional and scanning transmission electron microscopy, electron energy loss spectroscopy, X-ray photoelectron spectroscopy and X-ray reflectometry is presented. We demonstrate the use of this structure to investigate a selectively protein-resistant self-assembled monolayer (SAM) consisting of silane-anchored, biotin-terminated poly(ethylene glycol) (PEG). PEG-associated IR bands were observed. Measurements of protein-characteristic band intensities showed that this SAM adsorbed streptavidin whereas it repelled bovine serum albumin, as had been expected from its structure. PMID:20418963

  6. Structural and morphological properties of mesoporous carbon coated molybdenum oxide films

    NASA Astrophysics Data System (ADS)

    Dayal, Saurabh; Kumar, C. Sasi

    2016-05-01

    In the present study, we report the structural and morphological properties of mesoporous carbon coated molybdenum oxide films. The deposition of films was carried out in a two-step process, the first step involves deposition of molybdenum and carbon bilayer thin films using DC magnetron sputtering. In the second step the sample was ex-situ annealed in a muffle furnace at different temperatures (400°C to 600°C) and air cooled in the ambient atmosphere. The formation of the meso-porous carbon clusters on molybdenum oxide during the cooling step was investigated using FESEM and AFM techniques. The structural details were explored using XRD. The meso-porous carbon were found growing over molybdenum oxide layer as a result of segregation phenomena.

  7. Mechanism of PdO thin film formation during the oxidation of Pd(1 1 1)

    NASA Astrophysics Data System (ADS)

    Kan, Heywood H.; Weaver, Jason F.

    2009-09-01

    We investigated the mechanism by which a surface oxide layer on Pd(1 1 1) transforms to a PdO(1 0 1) thin film during oxidation with gaseous oxygen atoms in ultrahigh vacuum. Our results provide evidence that the precursor to bulk PdO formation is a distinct oxide phase that forms as small particles, referred to as PdO seeds, after the surface oxide saturates. With increasing oxygen coverage, the PdO seeds grow in size and eventually transform to more stable particles that agglomerate to yield a PdO film. Oxidation effectively ceases when the surface oxide layer is completely replaced by the bulk PdO film, demonstrating that the surface oxide is needed for PdO formation at the conditions studied. Both the kinetics of PdO formation and the final thickness of the PdO thin film depend strongly on the thermal stability of the PdO seeds. Below the decomposition temperature of the seeds (˜600 K), oxidation follows kinetics similar to Langmuirian adsorption and appears to be limited only by the rate of oxygen adsorption onto the surface oxide. In contrast, PdO formation above 600 K initially exhibits acceleratory kinetics, with the rates starting low but increasing steadily during the initial growth of PdO. We also observe a significant decrease in PdO(1 0 1) film thickness and improved crystallinity when oxidation is conducted below 600 K. We show that the trends observed in the oxidation kinetics and film thickness can be qualitatively explained within the context of a model in which the thermodynamic stability of PdO particles increases with increasing particle size and PdO seeds/particles coexist with a two-dimensional (2D) gas of oxygen atoms adsorbed on the surface oxide layer. This model suggests that the PdO particle-2D gas coexistence relation gives rise to three distinct growth regimes, namely, stable seed nucleation, metastable seed nucleation and oxygen dissolution into the subsurface where the latter is established at 2D gas coverages below the stability

  8. Photo-electrochemical Oxidation of Organic C1 Molecules over WO3 Films in Aqueous Electrolyte: Competition Between Water Oxidation and C1 Oxidation.

    PubMed

    Reichert, Robert; Zambrzycki, Christian; Jusys, Zenonas; Behm, R Jürgen

    2015-11-01

    To better understand organic-molecule-assisted photo-electrochemical water splitting, photo-electrochemistry and on-line mass spectrometry measurements are used to investigate the photo-electrochemical oxidation of the C1 molecules methanol, formaldehyde, and formic acid over WO3 film anodes in aqueous solution and its competition with O2 evolution from water oxidation O2 (+) and CO2 (+) ion currents show that water oxidation is strongly suppressed by the organic species. Photo-electro-oxidation of formic acid is dominated by formation of CO2 , whereas incomplete oxidation of formaldehyde and methanol prevails, with the selectivity for CO2 formation increasing with increasing potential and light intensity. The mechanistic implications for the photo-electro-oxidation of the organic molecules and its competition with water oxidation, which could be derived from this novel approach, are discussed.

  9. Low temperature atmospheric pressure chemical vapor deposition of group 14 oxide films

    SciTech Connect

    Hoffman, D.M.; Atagi, L.M. |; Chu, Wei-Kan; Liu, Jia-Rui; Zheng, Zongshuang; Rubiano, R.R.; Springer, R.W.; Smith, D.C.

    1994-06-01

    Depositions of high quality SiO{sub 2} and SnO{sub 2} films from the reaction of homoleptic amido precursors M(NMe{sub 2})4 (M = Si,Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 {plus_minus} 5 atom %. They are deposited with growth rates from 380 to 900 {angstrom}/min. The refractive indexes of the SiO{sub 2} films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm{sup {minus}1}. X-Ray diffraction studies reveal that the SiO{sub 2} film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO{sub 2} films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10{sup {minus}2} to 10{sup {minus}3} {Omega}cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.

  10. Tailoring of absorption edge by thermal annealing in tin oxide thin films

    SciTech Connect

    Thakur, Anup; Gautam, Sanjeev; Kumar, Virender; Chae, K. H.; Lee, Ik-Jae; Shin, Hyun Joon

    2015-05-15

    Tin oxide (SnO{sub 2}) thin films were deposited by radio-frequency (RF) magnetron sputtering on silicon and glass substrates in different oxygen-to-argon gas-flow ratio (O{sub 2}-to-Ar = 0%, 10%, 50%). All films were deposited at room temperature and fixed working pressures, 10 mTorr. The X-ray diffraction (XRD) measurement suggests that all films were crystalline in nature except film deposited in argon environment. Thin films were annealed in air at 200 °C, 400 °C and 600 °C for two hours. All films were highly transparent except the film deposited only in the argon environment. It was also observed that transparency was improved with annealing due to decrease in oxygen vacancies. Atomic force microscopy (AFM), results showed that the surface of all the films were highly flat and smooth. Blue shift was observed in the absorption edge with annealing temperature. It was also observed that there was not big change in the absorption edge with annealing for films deposited in 10% and 50% oxygen-to-argon gas-flow ratio.

  11. Bioactivity and osteoblast response of the micro-arc oxidized zirconia films.

    PubMed

    Han, Yong; Yan, Yuanyuan; Lu, Chunguo; Zhang, Yumei; Xu, Kewei

    2009-01-01

    Zirconia films containing Ca and P were prepared by micro-arc oxidation (MAO) of zirconium. The microstructure, in vitro bioactivity, and primary osteoblast response of the films were investigated as a function of the applied voltages in the range of 400-500 V. The results indicate that the MAO-formed zirconia films are porous and nanocrystalline, and predominantly composed of tetragonal zirconia (t-ZrO(2)). The pores and grains sizes and t-ZrO(2) content of the films tend to increase with the applied voltages. The zirconia films formed at higher voltages have higher amount of CaO and phosphate and slightly lower amount of Zr-OH groups. Although, all of the zirconia films can be fully covered by bone-like apatite after immersion in simulated body fluids (SBF) within 10 days, there exists remarkable difference in apatite-induced time. The apatite-forming ability of the films is not only ascribed to Zr-OH groups on the surfaces, but also enhanced by the CaO and phosphate ions incorporated into ZrO(2). Osteoblasts on the films are observed to attach, proliferate, and grow in good state, and have good alkaline phosphatase activity. It is suggested that the MAO-formed ZrO(2) films exhibit favorable bioactivity and biocompatibility. PMID:18260135

  12. Vanadium Oxide Thin Films Alloyed with Ti, Zr, Nb, and Mo for Uncooled Infrared Imaging Applications

    NASA Astrophysics Data System (ADS)

    Ozcelik, Adem; Cabarcos, Orlando; Allara, David L.; Horn, Mark W.

    2013-05-01

    Microbolometer-grade vanadium oxide (VO x ) thin films with 1.3 < x < 2.0 were prepared by pulsed direct-current (DC) sputtering using substrate bias in a controlled oxygen and argon environment. These films were systematically alloyed with Ti, Nb, Mo, and Zr using a second gun and radiofrequency (RF) reactive co-sputtering to probe the effects of the transition metals on the film charge transport characteristics. The results reveal that the temperature coefficient of resistance (TCR) and resistivity are unexpectedly similar for alloyed and unalloyed films up to alloy compositions in the ˜20 at.% range. Analysis of the film structures for the case of the 17% Nb-alloyed film by glancing-angle x-ray diffraction and transmission electron microscopy shows that the microstructure remains even with the addition of high concentrations of alloy metal, demonstrating the robust character of the VO x films to maintain favorable electrical transport properties for bolometer applications. Postdeposition thermal annealing of the alloyed VO x films further reveals improvement of electrical properties compared with unalloyed films, indicating a direction for further improvements in the materials.

  13. Room-temperature formation of low refractive index silicon oxide films using atmospheric-pressure plasma.

    PubMed

    Nakamura, Kei; Yamaguchi, Yoshihito; Yokoyama, Keiji; Higashida, Kosuke; Ohmi, Hiromasa; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

    2011-04-01

    This study aims to apply atmospheric-pressure (AP) plasma to the fabrication of single-layer anti-reflection (AR) coatings with porous silicon oxide. 150 MHz very high-frequency (VHF) excitation of AP plasma permits to enhance the chemical reactions both in the gas phase and on the film-growing surface, increasing deposition rate significantly. Silicon oxide films were prepared from silane (SiH4) and carbon dioxide (CO2) dual sources diluted with helium. The microstructure and refractive index of the films were studied using infrared absorption and ellipsometry as a function of VHF power density. It was shown that significant increase in deposition rate at room temperature prevented the formation of a dense SiO2 network, decreasing refractive index of the resulting film effectively. As a result, a porous silicon oxide film, which had the lowest refractive index of 1.24 at 632.8 nm, was obtained with a very high deposition rate of 235 nm/s. The reflectance and transmittance spectra showed that the low refractive index film functioned as a quarter-wave AR coating of a glass plate.

  14. Magnetoelectric hexaferrite thin film growth on oxide conductive layer for applications at low voltages

    NASA Astrophysics Data System (ADS)

    Zare, Saba; Izadkhah, Hessam; Vittoria, Carmine

    2016-08-01

    Magnetoelectric (ME) M-type hexaferrite thin films were deposited on conductive oxide layer of Indium-Tin Oxide (ITO) in order to lower applied voltages to observe ME effects at room temperature. The thin film of ME hexaferrites, SrCo2Ti2Fe8O19/ITO buffer layer, were deposited on sapphire substrate using Pulsed Laser Deposition (PLD) technique. The film exhibited ME effects as confirmed by vibrating sample magnetometer (VSM) in voltages as low as 0.5 V. Without the oxide conductive layer the required voltages to observe ME effects were typically 500 V and higher. The thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance. We measured saturation magnetization of 1064 G, and coercive field of 20 Oe for these thin films. The change rate in remanence magnetization was measured with the application of DC voltage at room temperature and it gave rise to changes in remanence in the order of 15% with the application of only 0.5 V (DC voltage). We deduced a ME coupling, α, of 5×10-10 s m-1 in SrCo2Ti2Fe8O19 thin films.

  15. Thermal annealing of thin PECVD silicon-oxide films for airgap-based optical filters

    NASA Astrophysics Data System (ADS)

    Ghaderi, M.; de Graaf, G.; Wolffenbuttel, R. F.

    2016-08-01

    This paper investigates the mechanical and optical properties of thin PECVD silicon-oxide layers for optical applications. The different deposition parameters in PECVD provide a promising tool to manipulate and control the film structure. Membranes for use in optical filters typically are of ~λ/4n thickness and should be slightly tensile for remaining flat, thus avoiding scattering. The effect of the thermal budget of the process on the mechanical characteristics of the deposited films was studied. Films with compressive stress ranging from  ‑100 to 0 MPa were deposited. Multiple thermal annealing cycles were applied to wafers and the in situ residual stress and ex situ optical properties were measured. The residual stress in the films was found to be highly temperature dependent. Annealing during the subsequent process steps results in tensile stress from 100 to 300 MPa in sub-micron thick PECVD silicon-oxide films. However, sub-100 nm thick PECVD silicon-oxide layers exhibit a lower dependence on the thermal annealing cycles, resulting in lower stress variations in films after the annealing. It is also shown that the coefficient of thermal expansion, hence the residual stress in layers, varies with the thickness. Finally, several free-standing membranes were fabricated and the results are compared.

  16. Conductor Formation Through Phase Transformation in Ti-Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Liu, Y. S.; Lin, Y. H.; Wei, Y. S.; Liu, C. Y.

    2012-01-01

    The resistance and transmittance of Ti-oxide thin films sputtered on quartz substrates were studied. The electrical and optical properties can be changed by varying the percentage of O2 introduced during the sputtering. The lowest resistivity for the sputtered Ti-oxide thin film was 2.30 × 10-2 Ω cm for 12.5% O2, which was obtained after annealing at 400°C in ambient oxygen. The results of x-ray photoelectron spectroscopy (XPS) curve-fitting indicate that the Ti-oxide thin film contained both Ti2O3 and TiO2 phases during deposition. The Ti2O3 phase was transformed into the stable TiO2 phase during annealing. The Ti2O3-TiO2 phase transformation initiated the substitution reaction. The substitution of Ti4+ ions in the TiO2 phase for the Ti3+ ions in the Ti2O3 phase created the free electrons. This Ti2O3-TiO2 phase transformation demonstrates the potential mechanism for conduction in the annealed Ti-oxide thin films. The transmittance of the annealed Ti-oxide thin films can be as high as approximately 90% at the 400 nm wavelength with the introduction of 16.5% O2. This result indicates that the annealed Ti-oxide thin films are excellent candidates for use as transparent conducting layers for ultraviolet (UV) or near-UV light-emitting diode (LED) devices.

  17. Localized photoelectrochemistry on a tungsten oxide-iron oxide thin film material library.

    PubMed

    Kollender, Jan Philipp; Mardare, Andrei Ionut; Hassel, Achim Walter

    2013-12-01

    A WO3-Fe2O3 thin film combinatorial library was fabricated using a vapor phase co-deposition method followed by a combined thermal annealing and oxidation process. The scanning electron microscopy (SEM) analysis of the library microstructure combined with X-ray diffraction (XRD) investigations suggested that α-Fe2O3 grains preferentially grow from boundaries of domains, containing finer grains of WO3 and Fe2WO6, forming filiform networks on the surface. The surface density of the hematite networks depends on the amount of Fe present in the library. Photocurrents measured at different applied biases using Photo Electrochemical Scanning Droplet Cell Microscopy (PE-SDCM) were analyzed and mapped along the entire compositional spread. A distinctive photocurrent peak was detected at 21.9 atom % Fe, and its appearance was correlated to the higher amount of hematite present in the library at this specific composition together with a specific WO3 crystallographic orientation ((222) orthorhombic or (400) monoclinic). This finding is confirmed by qualitative and quantitative XPS surface analysis at the photocurrent peak position in the material library. Thus the enhancement of the photocurrent cannot be exclusively attributed to certain surface modifications since only hematite was found on the library surface at the peak composition.

  18. The solution growth route and characterization of electrochromic tungsten oxide thin films

    SciTech Connect

    Todorovski, Toni; Najdoski, Metodija

    2007-12-04

    Electrochromic tungsten oxide thin films were prepared by using an aqueous solution of Na{sub 2}WO{sub 4}.2H{sub 2}O and dimethyl sulfate. Various techniques were used for the characterization of the films such as X-ray diffraction, cyclic voltammetry, SEM analysis and VIS-spectroscopy. The thin film durability was tested in an aqueous solution of LiClO{sub 4} (0.1 mol/dm{sup 3}) for about 7000 cycles followed by cyclic voltammetry. No significant changes in the cyclic voltammograms were found, thus proving the high durability of the films. The optical transmittance spectra of coloured and bleached states showed significant change in the transmittance, which makes these films favorable for electrochromic devices.

  19. Effect of thickness on nonlinear absorption properties of graphite oxide thin films

    NASA Astrophysics Data System (ADS)

    Sreeja, V. G.; Cheruvalathu, Ajina; Reshmi, R.; Anila, E. I.; Thomas, Sheenu; Jayaraj, M. K.

    2016-10-01

    We report the thickness dependent structural, linear and nonlinear optical properties of graphite oxide (GO) thin films synthesized by spin coating method. We observed that the structural, linear and nonlinear optical properties can be tuned by the film thickness in GO. The nonlinear absorption studies by open aperture z scan technique exhibited a saturable absorption. The nonlinear absorption coefficient and saturation intensity varies with film thickness which is attributed to increased localized defect states in the energy band gap. Our results emphasize relatively large thickness dependent optical nonlinearity of GO thin films and its potential for optical pulse generation, exploring the way to GO based nonlinear applications in Q switched mode locking laser systems. All the coated GO films were characterized by X-Ray diffraction method (XRD), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, UV-Vis absorption spectroscopy (UV-Vis), Photoluminescence (PL) and Scanning electron microscope (SEM) measurements.

  20. Preparation of vanadium oxide thin films modified with Ag using a hybrid deposition configuration

    NASA Astrophysics Data System (ADS)

    Gonzalez-Zavala, F.; Escobar-Alarcón, L.; Solís-Casados, D. A.; Rivera-Rodríguez, C.; Basurto, R.; Haro-Poniatowski, E.

    2016-04-01

    The application of a hybrid deposition configuration, formed by the interaction of a laser ablation plasma with a flux of atomic vapor, to deposit vanadium oxide thin films modified with different amounts of silver, is reported. The effect of the amount of Ag incorporated in the films on their structural, morphological, compositional and optical properties was studied. The obtained results reveal that films with variable Ag content from 11.7 to 24.6 at.% were obtained. Depending on the silver content, the samples show very different surface morphologies. Optical characterization indicates the presence of nanostructures of Ag. Thin films containing silver exhibit better photocatalytic performances than unmodified V2O5 films. Raman spectra reveal that as the silver content is increased, the signals associated with V2O5 disappear and new modes attributed mainly to silver vanadates appear suggesting the formation of ternary compounds.

  1. A method of producing high quality oxide and related films on surfaces

    SciTech Connect

    Ruckman, M.W.; Strongin, M. ); Gao, Yongli . Dept. of Physics and Astronomy)

    1991-01-01

    Aluminum oxide or aluminum nitride films were deposited on MBE grown GaAs(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid form the desired compound or a precursor than can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE-systems and on going research using the same apparatus suggests than photon or electron irradiation could also be used to promote the reactions needed to give the intended material.

  2. A method of producing high quality oxide and related films on surfaces

    SciTech Connect

    Ruckman, M.W.; Strongin, M.; Gao, Yongli

    1991-12-31

    Aluminum oxide or aluminum nitride films were deposited on MBE grown GaAs(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid form the desired compound or a precursor than can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE-systems and on going research using the same apparatus suggests than photon or electron irradiation could also be used to promote the reactions needed to give the intended material.

  3. Dielectric and Thermal Properties of Polyimide-Poly(ethylene oxide) Nanofoamed Films

    NASA Astrophysics Data System (ADS)

    Zhang, Yi-He; Yu, Li; Zhao, Li-Hang; Tong, Wang-Shu; Huang, Hai-Tao; Ke, Shan-Ming; Chan, H. L. W.

    2012-08-01

    Polyimide nanofoamed films have been prepared by incorporating poly(ethylene oxide) (PEO) into poly(amide acid) (PAA) precursors with subsequent imidization of PAA precursors at high temperature. The porous structure, thermal decomposition temperature, and dielectric property of nanofoamed films were investigated by scanning electron microscopy, thermogravimetric analysis, and impedance spectroscopy. Nanopores with sizes around 40 nm to 200 nm were formed in nanofoamed films by pyrolysis of PEO during the imidization progress. The decomposition temperature of nanofoamed films decreased slightly with increasing volume fraction of nanopores and maintained the high decomposition temperature of 499.7 °C when the volume fraction of nanopores was 10.9 %. The dielectric constant of nanofoamed films decreased from 3.4 for pure PI to 2.4 at 103 Hz through the introduction of nanopores with volume fraction of 10.9 %.

  4. Surface measurement of indium tin oxide thin film by wavelength-tuning Fizeau interferometry.

    PubMed

    Kim, Yangjin; Hibino, Kenichi; Sugita, Naohiko; Mitsuishi, Mamoru

    2015-08-10

    Indium-tin oxide (ITO) thin films have been widely used in displays such as liquid crystal displays and touch panels because of their favorable electrical conductivity and optical transparency. The surface shape and thickness of ITO thin films must be precisely measured to improve their reliability and performance. Conventional measurement techniques take single point measurements and require expensive systems. In this paper, we measure the surface shape of an ITO thin film on top of a transparent plate using wavelength-tuning Fizeau interferometry. The surface shape was determined by compensating for the phase error introduced by optical interference from the thin film, which was calculated using the phase and amplitude distributions measured by wavelength-tuning. The proposed measurement method achieved noncontact, large-aperture, and precise measurements of transparent thin films. The surface shape of the sample was experimentally measured to an accuracy of 5.13 nm. PMID:26368388

  5. Acoustoelectric current saturation in {ital c}-axis fiber-textured polycrystalline zinc oxide films

    SciTech Connect

    Pompe, T.; Srikant, V.; Clarke, D.R.

    1996-12-01

    Acoustoelectric current saturation, which until now has only been observed in piezoelectric single crystals, is observed in thin polycrystalline zinc oxide films. Epitaxial ZnO films on {ital c}-plane sapphire and textured ZnO polycrystalline films on fused silica both exhibit current saturation phenomenon. The values of the saturation current densities are in the range 10{sup 5}{endash}10{sup 6} A/cm{sup 2}, depending on the carrier concentration in the film, with corresponding saturation electric fields of 3{endash}5{times}10{sup 3} V/cm. In addition to the current saturation, the electrical properties of the films degraded with the onset of the acoustoelectric effect but could be restored by annealing at 250{degree}C in a vacuum for 30 min. {copyright} {ital 1996 American Institute of Physics.}

  6. Ascorbic acid-containing whey protein film coatings for control of oxidation.

    PubMed

    Min, Seacheol; Krochta, John M

    2007-04-18

    A formulation for the whey protein isolate film or coating incorporating ascorbic acid (AA-WPI film or coating) was developed. Tensile and oxygen-barrier properties of the AA-WPI film were measured. Antioxidant effects of the AA-WPI coating on roasted peanuts were studied by comparing the values of peroxide (PO), thiobarbituric acid reactive substance (TBARS), and free-radical-scavenging activity, determined with noncoated peanuts and peanuts coated with WPI with and without ascorbic acid during storage at 21% relative humidity (RH) and 23, 35, and 50 degrees C. The incorporation of AA reduced elongation of WPI films. The oxygen-barrier property of the WPI film was significantly improved by incorporation of AA. The AA-WPI coating retarded lipid oxidation in peanuts significantly at 23, 35, and 50 degrees C. The AA-WPI coated peanuts were more red than noncoated peanuts at all storage temperatures.

  7. Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

    SciTech Connect

    Lee, Yun Seog; Winkler, Mark T.; Siah, Sin Cheng; Brandt, Riley; Buonassisi, Tonio

    2011-05-09

    Cuprous oxide (Cu{sub 2}O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu{sub 2}O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu{sub 2}O at temperatures above 250 K, reaching 62 cm{sup 2}/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu{sub 2}O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

  8. Studies of aluminum oxide thin films deposited by laser ablation technique

    NASA Astrophysics Data System (ADS)

    Płóciennik, P.; Guichaoua, D.; Korcala, A.; Zawadzka, A.

    2016-06-01

    This paper presents the structural and optical investigations of the aluminum oxide nanocrystalline thin films. Investigated films were fabricated by laser ablation technique in high vacuum onto quartz substrates. The films were deposited at two different temperatures of the substrates equal to room temperature and 900 K. X-ray Diffraction spectra proved nanocrystalline character and the corundum phase of the film regardless on the substrate temperature during the deposition process. Values of the refractive indices, extinction and absorption coefficients were calculated by using Transmission and Reflection Spectroscopy in the UV-VIS-NIR range of the wavelength. Coupling Prism Method was used for films thickness estimations. Experimental measurements and theoretical calculations of the Third Harmonic Generation were also reported. Obtained results show that the lattice strain may affect obtained values of the third order nonlinear optical susceptibility.

  9. Partial reduction of re-oxidation processing of Y-Ba-Cu-O sputtered thin films

    SciTech Connect

    Garzon, F.H.; Beery, J.G.; Wilde, D.K.; Raistrick, I.D.

    1989-01-01

    Thin films of Y--Ba--Cu--O were produced by rf sputtering of YBa{sub 2}Cu{sub 3}O{sub 7-x} ceramic targets, using a variety of plasma compositions, rf power levels, and substrate temperatures. Post annealing of these films in oxygen produced superconducting films with T{sub c} values between 40--60 K, broad transition widths and semiconductor-like electrical behavior above T{sub c}. Subsequent annealing at 850{degree}C in an inert gas with a residual oxygen partial pressure of {le}10 ppM followed by an oxygen anneal produced high quality thin films: T{sub c} > 85 K with narrow transition widths. The structure and morphology of these films during reduction-oxidation processing were monitored using x-ray diffraction and electron microscopy. 8 refs., 4 figs.

  10. Electrical, Optical, and Thermal Behaviors of Transparent Film Heater Made of Reduced Graphene Oxide.

    PubMed

    Kim, Ji Eun; Yoon, Kwan Han; Son, Young Gon; Park, Chul Ho; Lee, Young Sil

    2016-02-01

    The electrical conductivity and the thermal performance of the films made of reduced graphene oxide (rGO) spray-coated on polycarbonate substrate were investigated. The electrical conductivity and the transmittance of 10 times spray coated film made from the solution with 0.08 wt% of rGO, 0.16 wt% of surfactant were 30 komega/sq and 64%, respectively. The steady-state temperature of the films increased from 25 degrees C for 40 komega/sq to 100 degrees C for 490 omega/sq at an applied voltage of 110 V. The heat transfer coefficient of the rGO coated film, a, was obtained as 139 W/m2 K using the model equation based on the thermal balance, which includes Joule heating convectional, and radiative heat transfers. The transmittance of the films decreased continuously from 73% with the increase of surface resistivity. PMID:27433610

  11. A method of producing high quality oxide and related films on surfaces

    NASA Technical Reports Server (NTRS)

    Ruckman, Mark W.; Strongin, Myron; Gao, Yongli

    1991-01-01

    Aluminum oxide or aluminum nitride films were deposited on molecular beam epitaxy (MBE) grown GaAS(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia, or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid to form the desired compound or a precursor that can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities, and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE systems. Ongoing research using the same apparatus suggests that photon or electron irradiation could be used to promote the reactions needed to produce the intended material.

  12. Electrochemical DNA biosensors based on thin gold films sputtered on capacitive nanoporous niobium oxide.

    PubMed

    Rho, Sangchul; Jahng, Deokjin; Lim, Jae Hoon; Choi, Jinsub; Chang, Jeong Ho; Lee, Sang Cheon; Kim, Kyung Ja

    2008-01-18

    Electrochemical DNA biosensors based on a thin gold film sputtered on anodic porous niobium oxide (Au@Nb(2)O(5)) are studied in detail here. We found that the novel DNA biosensor based on Au@Nb(2)O(5) is superior to those based on the bulk gold electrode or niobium oxide electrode. For example, the novel method does not require any time-consuming cleaning step in order to obtain reproducible results. The adhesion of gold films on the substrate is very stable during electrochemical biosensing, when the thin gold films are deposited on anodically prepared nanoporous niobium oxide. In particular, the novel biosensor shows enhanced biosensing performance with a 2.4 times higher resolution and a three times higher sensitivity. The signal enhancement is in part attributed to capacitive interface between gold films and nanoporous niobium oxide, where charges are accumulated during the anodic and cathodic scanning, and is in part ascribed to the structural stability of DNA immobilized at the sputtered gold films. The method allows for the detection of single-base mismatch DNA as well as for the discrimination of mismatch positions.

  13. Impedance spectroscopy study of anodic growth of zirconium oxide film in NaOH medium

    NASA Astrophysics Data System (ADS)

    Pauporté, T.; Finne, J.; Lincot, D.

    2005-06-01

    The growth of anodic oxide films on zirconium metal has been followed up to 300 V by electrochemical impedance spectroscopy and scanning electron microscopy. The maximum layer thickness is 720 nm, the dielectric constant of the film is measured at 19.5 and the growth constant is 2.4 nm V-1. Above 50 V, the presence of two impedance relaxations between 1 Hz and 200 kHz reveals a bilayered structure. This may be a consequence of a lower resistivity of the outer layer induced by some electrolytic solution infiltration into film defects.

  14. Aligned carbon nanotube, graphene and graphite oxide thin films via substrate-directed rapid interfacial deposition.

    PubMed

    D'Arcy, Julio M; Tran, Henry D; Stieg, Adam Z; Gimzewski, James K; Kaner, Richard B

    2012-05-21

    A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated.

  15. Improved Transparent Conducting Oxides Boost Performance of Thin-Film Solar Cells (Fact Sheet)

    SciTech Connect

    Not Available

    2011-02-01

    Today?s thin-film solar cells could not function without transparent conducting oxides (TCOs). TCOs act as a window, both protecting the cell and allowing light to pass through to the cell?s active layers. Until recently, TCOs were seen as a necessary, but static, layer of a thin-film photovoltaic (PV) cell. But a group of researchers at the National Renewable Energy Laboratory (NREL) has identified a pathway to producing improved TCO films that demonstrate higher infrared transparency. To do so, they have modified the TCOs in ways that did not seem possible a few years ago.

  16. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    NASA Astrophysics Data System (ADS)

    Kim, Junghwan; Miyokawa, Norihiko; Ide, Keisuke; Toda, Yoshitake; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-01-01

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  17. Scanning tunneling microscopy/spectroscopy on perovskite oxide thin films deposited in situ.

    PubMed

    Hitosugi, Taro; Shimizu, Ryota; Ohsawa, Takeo; Iwaya, Katsuya

    2014-10-01

    Complex oxide surfaces and interfaces, consisting of two or more cations and oxygen anions, have attracted a great deal of attention because their properties are crucial factors in the performance of catalysts, fuel cells, and Li-ion batteries. However, atomic-scale investigations of these oxide surfaces have been hindered because of the difficulties in surface preparation. Here, we demonstrate atomic-scale surface studies of complex perovskite oxides and the initial growth processes in oxide epitaxial films deposited on (✓13 × ✓13)-R33.7° reconstructed SrTiO3 (001) substrates using a scanning tunneling microscope integrated with a pulsed laser deposition system. The atomically ordered, reconstructed SrTiO3 (001) surface is stable under the typical conditions necessary for the growth of oxide thin films, and hence is considered suitable for the study of the initial growth processes in oxide films. The atomic-scale microscopic/spectroscopic characterizations performed here shed light on the microscopic origin of electronic properties observed in complex oxides and their heterostructures.

  18. Controlled oxide films formation by nanosecond laser pulses for color marking.

    PubMed

    Veiko, Vadim; Odintsova, Galina; Ageev, Eduard; Karlagina, Yulia; Loginov, Anatoliy; Skuratova, Alexandra; Gorbunova, Elena

    2014-10-01

    A technology of laser-induced coloration of metals by surface oxidation is demonstrated. Each color of the oxide film corresponds to a technologic chromacity coefficient, which takes into account the temperature of the sample after exposure by sequence of laser pulses with nanosecond duration and effective time of action. The coefficient can be used for the calculation of laser exposure regimes for the development of a specific color on the metal. A correlation between the composition of the films obtained on the surface of stainless steel AISI 304 and commercial titanium Grade 2 and its color and chromacity coordinates is shown. PMID:25322009

  19. Direct nano-scale patterning of Ag films using hard X-ray induced oxidation.

    PubMed

    Kim, Jae Myung; Lee, Su Yong; Kang, Hyon Chol; Noh, Do Young

    2015-01-01

    The morphological change of silver nano-particles (AgNPs) exposed to an intense synchrotron X-ray beam was investigated for the purpose of direct nano-scale patterning of metal thin films. AgNPs irradiated by hard X-rays in oxygen ambient were oxidized and migrated out of the illuminated region. The observed X-ray induced oxidation was utilized to fabricate nano-scale metal line patterns using sectioned WSi2/Si multilayers as masks. Lines with a width as small as 21 nm were successfully fabricated on Ag films on silicon nitride. Au/Ag nano-lines were also fabricated using the proposed method.

  20. The surface hydro-oxidation of LaNiO(3-delta) thin films.

    PubMed

    Mickevicius, S; Grebinskij, S; Bondarenka, V; Lisauskas, V; Sliuziene, K; Tvardauskas, H; Vengalis, B; Orlowski, B A; Osinniy, V; Drube, W

    2009-01-01

    The chemical structure and possible hydro-oxidation of LaNiO(3-delta) films were studied by means of tuneable high-energy X-ray photoelectron spectroscopy using synchrotron radiation. It was shown that the hydroxyl-containing phase, located near the film surface, may be attributed to the lanthanum and nickel hydroxide species. The thickness of a hydroxide-enriched layer was estimated from the oxide/hydroxide ratio measured at normal and grazing conditions. The hydroxide layer thickness was about 2 nm for step and/or exponential hydroxide spatial distribution.

  1. Effect of reducing system on capacitive behavior of reduced graphene oxide film: Application for supercapacitor

    NASA Astrophysics Data System (ADS)

    Akbi, Hamdane; Yu, Lei; Wang, Bin; Liu, Qi; Wang, Jun; Liu, Jingyuan; Song, Dalei; Sun, Yanbo; Liu, Lianhe

    2015-01-01

    To determine the best chemical reduction of graphene oxide film with hydriodic acid that gives maximum energy and power density, we studied the effect of two reducing systems, hydriodic acid/water and hydriodic acid/acetic acid, on the morphology and electrochemical features of reduced graphene oxide film. Using acetic acid as solvent results in high electrical conductivity (5195 S m-1), excellent specific capacitance (384 F g-1) and good cyclic stability (about 98% of its initial response after 4000 cycles). Using water as a solvent, results in an ideal capacitive behavior and excellent cyclic stability (about 6% increase of its initial response after 2100 cycles).

  2. Nonlinear refraction properties of nickel oxide thin films at 800 nm

    SciTech Connect

    Melo, Ronaldo P. Jr. de; Silva, Blenio J. P. da; Santos, Francisco Eroni P. dos; Azevedo, A.; Araujo, Cid B. de

    2009-11-01

    Measurements of the nonlinear refractive index, n{sub 2}, of nickel oxide films prepared by controlled oxidation of nickel films deposited on substrates of soda-lime glass are reported. The structure and morphology of the samples were characterized by scanning electron microscopy, atomic force microscopy, and x-ray diffractometry. Samples of excellent optical quality were prepared. The nonlinear measurements were performed using the thermally managed eclipse Z-scan technique at 800 nm. A large value of n{sub 2}approx =10{sup -12} cm{sup 2}/W and negligible nonlinear absorption were obtained.

  3. A model bismuth oxide intergranular thin film in a ZnO twist grain boundary.

    PubMed

    Domingos, H S

    2010-04-14

    The electronic properties of a model bismuth oxide intergranular film in ZnO were investigated using density functional plane wave calculations. It was found that oxygen excess plays a fundamental role in the appearance of electrical activity. The introduction by oxygen interstitials or zinc vacancies results in depletion of the charge in deep gap states introduced by the bismuth impurities. This makes the boundary less metallic and promotes the formation of acceptor states localized to the boundary core, resulting in Schottky barrier enhancement. The results indicate that the origin of electrical activity in thin intergranular bismuth oxide films is probably not distinct from that in decorated ZnO boundaries. PMID:21389532

  4. Characterization of Tungsten Oxide Thin Films Produced by Spark Ablation for NO2 Gas Sensing.

    PubMed

    Isaac, Nishchay A; Valenti, Marco; Schmidt-Ott, Andreas; Biskos, George

    2016-02-17

    Tungsten oxides (WOx) thin films are currently used in electro-chromic devices, solar-cells and gas sensors as a result of their versatile and unique characteristics. In this study, we produce nanoparticulate WOx films by spark ablation and focused inertial deposition, and demonstrate their application for NO2 sensing. The primary particles in the as-deposited film samples are amorphous with sizes ranging from 10 to 15 nm. To crystallize the samples, the as-deposited films are annealed at 500 °C in air. This also caused the primary particles to grow to 30-50 nm by sintering. The morphologies and crystal structures of the resulting materials are studied using scanning and transmission electron microscopy and X-ray diffraction, whereas information on composition and oxidation states are determined by X-ray photoemission spectroscopy. The observed sensitivity of the resistance of the annealed films is ∼100 when exposed to 1 ppm of NO2 in air at 200 °C, which provides a considerable margin for employing them in gas sensors for measuring even lower concentrations. The films show a stable and repeatable response pattern. Considering the numerous advantages of spark ablation for fabricating nanoparticulate thin films, the results reported here provide a promising first step toward the production of high sensitivity and high accuracy sensors. PMID:26796099

  5. Characterization of Tungsten Oxide Thin Films Produced by Spark Ablation for NO2 Gas Sensing.

    PubMed

    Isaac, Nishchay A; Valenti, Marco; Schmidt-Ott, Andreas; Biskos, George

    2016-02-17

    Tungsten oxides (WOx) thin films are currently used in electro-chromic devices, solar-cells and gas sensors as a result of their versatile and unique characteristics. In this study, we produce nanoparticulate WOx films by spark ablation and focused inertial deposition, and demonstrate their application for NO2 sensing. The primary particles in the as-deposited film samples are amorphous with sizes ranging from 10 to 15 nm. To crystallize the samples, the as-deposited films are annealed at 500 °C in air. This also caused the primary particles to grow to 30-50 nm by sintering. The morphologies and crystal structures of the resulting materials are studied using scanning and transmission electron microscopy and X-ray diffraction, whereas information on composition and oxidation states are determined by X-ray photoemission spectroscopy. The observed sensitivity of the resistance of the annealed films is ∼100 when exposed to 1 ppm of NO2 in air at 200 °C, which provides a considerable margin for employing them in gas sensors for measuring even lower concentrations. The films show a stable and repeatable response pattern. Considering the numerous advantages of spark ablation for fabricating nanoparticulate thin films, the results reported here provide a promising first step toward the production of high sensitivity and high accuracy sensors.

  6. Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

    NASA Astrophysics Data System (ADS)

    Bouanane, I.; Kabir, A.; Boulainine, D.; Zerkout, S.; Schmerber, G.; Boudjema, B.

    2016-07-01

    Zinc oxide thin films were prepared by thermal oxidation of zinc films at a temperature of 500°C for 2 h. The Zn films were deposited onto glass substrates by magnetron RF sputtering. The sputtering time varied from 2.5 min to 15 min. The physico-chemical characterization of the ZnO films was carried out depending on the Zn sputtering time. According to x-ray diffraction, ZnO films were polycrystalline and the Zn-ZnO phase transformation was direct. The mean transmittance of the ZnO films was around 80% and the band gap increased from 3.15 eV to 3.35 eV. Photoluminescence spectra show ultraviolet, visible, and infrared emission bands. The increase of the UV emission band was correlated with the improvement of the crystalline quality of the ZnO films. The concentration of native defects was found to decrease with increasing Zn sputtering time. The decrease of the electrical resistivity as a function of Zn sputtering time was linked to extrinsic hydrogen-related defects.

  7. Highly controllable and green reduction of graphene oxide to flexible graphene film with high strength

    SciTech Connect

    Wan, Wubo; Zhao, Zongbin; Hu, Han; Gogotsi, Yury; Qiu, Jieshan

    2013-11-15

    Graphical abstract: Highly controllable and green reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant. Self-assembly of the as-made CCG sheets results in a flexible CCG film, of which the tensile strength strongly depends on the deoxygenation degree of graphene sheets. - Highlights: • Graphene was synthesized by an effective and environmentally friendly approach. • We introduced a facile X-ray diffraction analysis method to investigate the reduction process from graphene oxide to graphene. • Flexible graphene films were prepared by self-assembly of the graphene sheets. • The strength of the graphene films depends on the reduction degree of graphene. - Abstract: Graphene film with high strength was fabricated by the assembly of graphene sheets derived from graphene oxide (GO) in an effective and environmentally friendly approach. Highly controllable reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant, in which the reduction process was monitored by XRD analysis and UV–vis absorption spectra. Self-assembly of the as-made CCG sheets results in a flexible CCG film. This method may open an avenue to the easy and scalable preparation of graphene film with high strength which has promising potentials in many fields where strong, flexible and electrically conductive films are highly demanded.

  8. Oxidation Temperature Dependence of the Structural, Optical and Electrical Properties of SnO2 Thin Films

    NASA Astrophysics Data System (ADS)

    Boulainine, D.; Kabir, A.; Bouanane, I.; Boudjema, B.; Schmerber, G.

    2016-08-01

    In this work, SnO2 thin films were prepared by thermal oxidation of Sn in an oxygen-rich atmosphere. The Sn thin films were deposited onto Si (100) substrates by vacuum evaporation, and the properties of the oxide films were investigated as a function of the oxidation temperature. The x-ray diffraction patterns showed that the obtained films have a polycrystalline structure with a preferential orientation along the (101) plane. The film oxidized at 500°C was not completely oxidized. The grain growth of the films was controlled by the pore mobility process. The UV-Vis reflectance spectra revealed an increase in both the refractive index and density of the films, reflecting the densification of the investigated films. The band gap energy decreased from 3.78 eV to 3.62 eV, caused by an increase in charge carrier density due to increased grain size. The increase in film thickness can be explained by the upward diffusion of tin atoms into the oxide film surface and the downward diffusion of oxygen atoms into the metal. The increase in the O/Sn ratio, determined from Rutherford backscattering spectroscopy, indicated enhanced material stoichiometry. Electrical resistivity decreased from 9.7 × 10-3 Ω cm to 1.7 × 10-4 Ω cm, which was attributed to the increased grain size.

  9. Crossover of electron-electron interaction effect in Sn-doped indium oxide films

    SciTech Connect

    Zhang, Yu-Jie; Gao, Kuang-Hong; Li, Zhi-Qing

    2015-03-09

    We systematically study the structures and electrical transport properties of a series of Sn-doped indium oxide (ITO) films with thickness t ranging from ∼5 to ∼53 nm. Scanning electron microscopy and x-ray diffraction results indicate that the t ≲ 16.8 nm films are polycrystalline, while those t ≳ 26.7 nm films are epitaxially grown along [100] direction. For the epitaxial films, the Altshuler and Aronov electron-electron interaction (EEI) effect governs the temperature behaviors of the sheet conductance σ{sub □} at low temperatures, and the ratios of relative change of Hall coefficient ΔR{sub H}/R{sub H} to relative change of sheet resistance ΔR{sub □}/R{sub □} are ≈2, which is quantitatively consistent with Altshuler and Aronov EEI theory and seldom observed in other systems. For those polycrystalline films, both the sheet conductance and Hall coefficient vary linearly with logarithm of temperature below several tens Kelvin, which can be well described by the current EEI theories in granular metals. We extract the intergranular tunneling conductance of each film by comparing the σ{sub □}(T) data with the predication of EEI theories in granular metals. It is found that when the tunneling conductance is less than the conductance of a single indium tin oxide (ITO) grain, the ITO film reveals granular metal characteristics in transport properties; conversely, the film shows transport properties of homogeneous disordered conductors. Our results indicate that electrical transport measurement can not only reveal the underlying charge transport properties of the film but also be a powerful tool to detect the subtle homogeneity of the film.

  10. Strong composite films with layered structures prepared by casting silk fibroin-graphene oxide hydrogels

    NASA Astrophysics Data System (ADS)

    Huang, Liang; Li, Chun; Yuan, Wenjing; Shi, Gaoquan

    2013-04-01

    Composite films of graphene oxide (GO) sheets and silk fibroin (SF) with layered structures have been prepared by facile solution casting of SF-GO hydrogels. The as-prepared composite film containing 15% (by weight, wt%) of SF shows a high tensile strength of 221 +/- 16 MPa and a failure strain of 1.8 +/- 0.4%, which partially surpass those of natural nacre. Particularly, this composite film also has a high modulus of 17.2 +/- 1.9 GPa. The high mechanical properties of this composite film can be attributed to its high content of GO (85 wt%), compact layered structure and the strong hydrogen bonding interaction between SF chains and GO sheets.Composite films of graphene oxide (GO) sheets and silk fibroin (SF) with layered structures have been prepared by facile solution casting of SF-GO hydrogels. The as-prepared composite film containing 15% (by weight, wt%) of SF shows a high tensile strength of 221 +/- 16 MPa and a failure strain of 1.8 +/- 0.4%, which partially surpass those of natural nacre. Particularly, this composite film also has a high modulus of 17.2 +/- 1.9 GPa. The high mechanical properties of this composite film can be attributed to its high content of GO (85 wt%), compact layered structure and the strong hydrogen bonding interaction between SF chains and GO sheets. Electronic supplementary information (ESI) available: XPS spectrum of the SF-GO hybrid film, SEM images of lyophilized GO dispersion and the failure surface of GO film. See DOI: 10.1039/c3nr00196b

  11. In situ TEM Studies of the Initial Oxidation stage of Cu and Cu Alloy Thin Films

    NASA Astrophysics Data System (ADS)

    Yang, Judith; Kang, Yihong; Luo, Langli; Ciston, James; Stach, Eric; Zhou, Guangwen

    2012-02-01

    The fundamental understanding of oxidation at the nanoscale is important for the environmental stability of coating materials as well as processing of oxide nanostructures. Our previous studies show the epitaxial growth of Cu2O islands during the initial stages of oxidation of Cu thin films, where surface diffusion and strain impact the oxide development and morphologies. The addition of secondary elements changes the oxidation mechanism. If the secondary element is non-oxidizing, such as Au, it will limit the Cu2O island growth due to the depletion of Cu near the oxide islands. When the secondary element is oxidizing, for example Ni, the alloy will show more complex behaviour, where duplex oxide islands were observed. Nucleation density and growth rate of oxide islands are observed under various temperatures and oxygen partial pressures (pO2) as a function of time by in situ ultra high vacuum (UHV)-transmission electron microscopy (TEM). Our initial results of Cu-Ni(001) oxidation is that the oxide epitaxy and morphologies change as function of Ni concentration. For higher spatial resolution, we are examining the atomic scale oxidation by aberration-corrected ETEM with 1å resolution.

  12. Chemical bonding and optoelectrical properties of ruthenium doped yttrium oxide thin films

    SciTech Connect

    Yang, Lei; Han, Jiecai; Zhu, Jiaqi; Zhu, Yuankun; Schlaberg, H.Inaki

    2013-11-15

    Graphical abstract: IR transmittance of various transparent conductive materials (RYO films grown under RT, 400 °C and 600 °C, ITO films [2], Carbon Nano tube films [11], metal/dielectric multilayers [12]). - Highlights: • Y{sub 2}O{sub 3}:Ru (RYO) films were prepared on ZnS substrates by reactive magnetron sputtering. • Ru doping significantly decreases the resistivity and extends the transparent range. • Optical and electrical properties of RYO films can be tuned by substrate temperatures. • The RYO films exhibit excellent far-IR transmittance and electrical property. - Abstract: Highly infrared transparent conductive ruthenium doped yttrium oxide (RYO) films were deposited on zinc sulfide and glass substrates by reactive magnetron sputtering. The structural, optical, and electrical properties of the films as a function of growth temperature were studied. It is shown that the sputtered RYO thin films are amorphous and smooth surface is obtained. The infrared transmittance of the films increases with increasing the growth temperature. RYO films maintain greater than ∼65% transmittance over a wide wavelength range from 2.5 μm to 12 μm and the highest transmittance value reaches 73.3% at ∼10 μm. With increasing growth temperature, the resistivity changed in a wide range and lowest resistivity of about 3.36 × 10{sup −3} Ω cm is obtained at room temperature. The RYO thin films with high conductivity and transparency in IR spectral range would be suitable for infrared optical and electromagnetic shielding devices.

  13. Sulfidation of electrodeposited microcrystalline/nanocrystalline cuprous oxide thin films for solar energy applications

    NASA Astrophysics Data System (ADS)

    Jayathilaka, K. M. D. C.; Kapaklis, V.; Siripala, W.; Jayanetti, J. K. D. S.

    2012-12-01

    Grain size of polycrystalline semiconductor thin films in solar cells is optimized to enhance the efficiency of solar cells. This paper reports results on an investigation carried out on electrodeposited n-type cuprous oxide (Cu2O) thin films on Ti substrates with small crystallites and sulfidation of them to produce a thin-film solar cell. During electrodeposition of Cu2O films, pH of an aqueous acetate bath was optimized to obtain films of grain size of about 100 nm, that were then used as templates to grow thicker n-type nanocrystalline Cu2O films. XRD and SEM analysis revealed that the films were of single phase and the substrates were well covered by the films. A junction of Cu2O/CuxS was formed by partially sulfiding the Cu2O films using an aqueous sodium sulfide solution. It was observed that the photovoltaic properties of nano Cu2O/CuxS heterojunction structures are better than micro Cu2O/CuxS heterojunction solar cells. Resulting Ti/nano Cu2O/CuxS/Au solar cell structure produced an energy conversion efficiency of 0.54%, Voc = 610 mV and Jsc = 3.4 mA cm-2, under AM 1.5 illumination. This is a significant improvement compared to the use of microcrystalline thin film Cu2O in the solar cell structure where the efficiency of the cell was limited to 0.11%. This improvement is attributed mainly to the increased film surface area associated with nanocrystalline Cu2O films.

  14. Thermal Processing and Microwave Processing of Mixed-Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Gadre, Mandar

    2011-12-01

    Amorphous oxide semiconductors are promising new materials for various optoelectronic applications. In this study, improved electrical and optical properties upon thermal and microwave processing of mixed-oxide semiconductors are reported. First, arsenic-doped silicon was used as a model system to understand susceptor-assisted microwave annealing. Mixed oxide semiconductor films of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) were deposited by room-temperature RF sputtering on flexible polymer substrates. Thermal annealing in different environments---air, vacuum and oxygen was done. Electrical and optical characterization was carried out before and after annealing. The degree of reversal in the degradation in electrical properties of the thin films upon annealing in oxygen was assessed by subjecting samples to subsequent vacuum anneals. To further increase the conductivity of the IGZO films, Ag layers of various thicknesses were embedded between two IGZO layers. Optical performance of the multilayer structures was improved by susceptor-assisted microwave annealing and furnace-annealing in oxygen environment without compromising on their electrical conductivity. The post-processing of the films in different environments was used to develop an understanding of mechanisms of carrier generation, transport and optical absorption. This study establishes IGZO as a viable transparent conductor, which can be deposited at room-temperature and processed by thermal and microwave annealing to improve electrical and optical performance for applications in flexible electronics and optoelectronics.

  15. XPS, LEED and STM study of thin oxide films formed on Cr(110)

    NASA Astrophysics Data System (ADS)

    Maurice, V.; Cadot, S.; Marcus, P.

    2000-06-01

    The growth, thickness, composition and structure of chromium oxide thin films formed by exposing Cr(110) single-crystal surfaces to gaseous oxygen at 300 and 625 K have been investigated by XPS, LEED and STM measurements. The oxide films formed at the two temperatures are significantly different. At 300 K, a granular and non-crystalline oxide is formed, which grows with a constant ˜Cr 2O 3 stoichiometry up to a limiting thickness of 0.9 nm. The film is hydrated with a water content of 10-20%, which decreases upon annealing. Nuclei of oxide with a lateral dimension of ˜0.7 nm and a height of ˜0.2 nm have been observed in the nucleation stage. These nuclei grow predominantly laterally and coalesce to fully cover the substrate surface prior to the thickening stage. At 625 K, a first stage of oxygen adsorption is observed in which stripes 1.5-2.3 nm wide and parallel to the Cr[001] direction are observed after annealing in UHV. They correspond to narrow segments of mixed and close-packed planes of O atoms and ions having a geometry and orientation similar to those of the anions planes in the oxide crystals. Rows of adatoms, possibly Cr 3+ ions of oxide nuclei, are observed above the stripes. Thickening at 625 K leads to the formation of a non-crystalline oxide, which grows up to a limiting thickness of 4.6 nm. The presence of Cr 3+ vacancies related to a significant cation transport through the oxide film in this temperature regime is detected. After UHV annealing at 825 or 925 K, the film is anhydrous. The Cr 3+ vacancies are accumulated at the metal/oxide film interface. The film crystallizes in epitaxy with the substrate in the following orientation: α-Cr 2O 3(0001)‖Cr(110) and α-Cr 2O 3[213¯0]‖Cr[001]. The STM measurements of the unit cell of the α-Cr 2O 3(0001) surface are consistent with a termination by a cation plane and show three tunneling sites assigned to the various possible locations of the Cr 3+ ions at room temperature due to surface

  16. Residual stress distribution in oxide films formed on Zircaloy-2

    NASA Astrophysics Data System (ADS)

    Sawabe, T.; Sonoda, T.; Furuya, M.; Kitajima, S.; Takano, H.

    2015-11-01

    In order to evaluate residual the stress distribution in oxides formed on zirconium alloys, synchrotron X-ray diffraction (XRD) was performed on the oxides formed on Zircaloy-2 after autoclave treatment at a temperature of 360° C in pure water. The use of a micro-beam XRD and a micro-sized cross-sectional sample achieved the detailed local characterization of the oxides. The oxide microstructure was observed by TEM following the micro-beam XRD measurements. The residual compressive stress increased in the vicinity of the oxide/metal interface of the pre-transition oxide. Highly oriented columnar grains of a monoclinic phase were observed in that region. Furthermore, at the interface of the post-first transition oxide, there was only a small increase in the residual compressive stress and the columnar grains had a more random orientation. The volume fraction of the tetragonal phase increased with the residual compressive stress. The results are discussed in terms of the formation and transition of the protective oxide.

  17. Controlled crumpling of graphene oxide films for tunable optical transmittance.

    PubMed

    Thomas, Abhay V; Andow, Brandon C; Suresh, Shravan; Eksik, Osman; Yin, Jie; Dyson, Anna H; Koratkar, Nikhil

    2015-06-01

    The delamination buckling approach provides a facile means to dynamically control the optical transmittance of extremely flexible and stretchable graphene oxide coatings with fast response time. Such graphene oxide coatings can be deposited by scalable solution-processing methods for potential applications in dynamic glazing.

  18. Controlled crumpling of graphene oxide films for tunable optical transmittance.

    PubMed

    Thomas, Abhay V; Andow, Brandon C; Suresh, Shravan; Eksik, Osman; Yin, Jie; Dyson, Anna H; Koratkar, Nikhil

    2015-06-01

    The delamination buckling approach provides a facile means to dynamically control the optical transmittance of extremely flexible and stretchable graphene oxide coatings with fast response time. Such graphene oxide coatings can be deposited by scalable solution-processing methods for potential applications in dynamic glazing. PMID:25899342

  19. Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Kizu, Takio; Mitoma, Nobuhiko; Miyanaga, Miki; Awata, Hideaki; Nabatame, Toshihide; Tsukagoshi, Kazuhito

    2015-09-01

    Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm2/V s with good stability under a negative bias stress in InWZnO thin film transistors.

  20. Measurement of valence band structure in boron-zinc-oxide films by making use of ion beams

    SciTech Connect

    Uhm, Han S.; Kwon, Gi C.; Choi, Eun H.

    2011-12-26

    Measurement of valence band structure in the boron-zinc oxide (BZO) films was developed using the secondary electron emission due to the Auger neutralization of ions. The energy distribution profile of the electrons emitted from boron-zinc-oxide films was measured and rescaled so that Auger self-convolution arose; thus, revealing the detailed structure of the valence band and suggesting that a high concentration of boron impurity in BZO films may enhance the transition of electrons and holes through the band gap from the valence to the conduction band in zinc oxide crystals; thereby improving the conductivity of the film.

  1. Correlation between surface morphology and electrical properties of VO2 films grown by direct thermal oxidation method

    NASA Astrophysics Data System (ADS)

    Yoon, Joonseok; Park, Changwoo; Park, Sungkyun; Mun, Bongjin Simon; Ju, Honglyoul

    2015-10-01

    We investigate surface morphology and electrical properties of VO2 films fabricated by direct thermal oxidation method. The VO2 film prepared with oxidation temperature at 580 °C exhibits excellent qualities of VO2 characteristics, e.g. a metal-insulator transition (MIT) near 67 °C, a resistivity ratio of ∼2.3 × 104, and a bandgap of 0.7 eV. The analysis of surface morphology with electrical resistivity of VO2 films reveals that the transport properties of VO2 films are closely related to the grain size and surface roughness that vary with oxidation annealing temperatures.

  2. Self-activated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors.

    PubMed

    Moon, Hi Gyu; Shim, Young-Soek; Kim, Do Hong; Jeong, Hu Young; Jeong, Myoungho; Jung, Joo Young; Han, Seung Min; Kim, Jong Kyu; Kim, Jin-Sang; Park, Hyung-Ho; Lee, Jong-Heun; Tuller, Harry L; Yoon, Seok-Jin; Jang, Ho Won

    2012-01-01

    One of the top design priorities for semiconductor chemical sensors is developing simple, low-cost, sensitive and reliable sensors to be built in handheld devices. However, the need to implement heating elements in sensor devices, and the resulting high power consumption, remains a major obstacle for the realization of miniaturized and integrated chemoresistive thin film sensors based on metal oxides. Here we demonstrate structurally simple but extremely efficient all oxide chemoresistive sensors with ~90% transmittance at visible wavelengths. Highly effective self-activation in anisotropically self-assembled nanocolumnar tungsten oxide thin films on glass substrate with indium-tin oxide electrodes enables ultrahigh response to nitrogen dioxide and volatile organic compounds with detection limits down to parts per trillion levels and power consumption less than 0.2 microwatts. Beyond the sensing performance, high transparency at visible wavelengths creates opportunities for their use in transparent electronic circuitry and optoelectronic devices with avenues for further functional convergence. PMID:22905319

  3. Graphene oxide thin films: influence of chemical structure and deposition methodology.

    PubMed

    Hidalgo, R S; López-Díaz, D; Velázquez, M Mercedes

    2015-03-10

    We synthesized graphene oxide sheets of different functionalization by oxidation of two different starting materials, graphite and GANF nanofibers, followed by purification based on alkaline washing. The chemical structure of graphene oxide materials was determined by X-ray photoelectron spectroscopy (XPS), and the nanoplatelets were characterized by ζ potential and dynamic light scattering (DLS) measurements. The XPS results indicated that the chemical structure depends on the starting material. Two different deposition methodologies, Langmuir-Blodgett (LB) and Langmuir-Schaefer (LS), were employed to build the graphene oxide thin films. The film morphology was analyzed by scanning electron microscopy (SEM). The SEM images allow us to conclude that the LB methodology provides the highest coverage. This coverage is almost independent of the chemical composition of sheets. Conversely, the coverage obtained by the LS methodology increases with the percentage of C-O groups attached to sheets. Surface-pressure isotherms of these materials were interpreted according to the Volmer model.

  4. Correlation between locally deformed structure and oxide film properties in austenitic stainless steel irradiated with neutrons

    NASA Astrophysics Data System (ADS)

    Chimi, Yasuhiro; Kitsunai, Yuji; Kasahara, Shigeki; Chatani, Kazuhiro; Koshiishi, Masato; Nishiyama, Yutaka

    2016-07-01

    To elucidate the mechanism of irradiation-assisted stress corrosion cracking (IASCC) in high-temperature water for neutron-irradiated austenitic stainless steels (SSs), the locally deformed structures, the oxide films formed on the deformed areas, and their correlation were investigated. Tensile specimens made of irradiated 316L SSs were strained 0.1%-2% at room temperature or at 563 K, and the surface structures and crystal misorientation among grains were evaluated. The strained specimens were immersed in high-temperature water, and the microstructures of the oxide films on the locally deformed areas were observed. The appearance of visible step structures on the specimens' surface depended on the neutron dose and the applied strain. The surface oxides were observed to be prone to increase in thickness around grain boundaries (GBs) with increasing neutron dose and increasing local strain at the GBs. No penetrative oxidation was observed along GBs or along surface steps.

  5. Self-activated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors

    PubMed Central

    Moon, Hi Gyu; Shim, Young-Soek; Kim, Do Hong; Jeong, Hu Young; Jeong, Myoungho; Jung, Joo Young; Han, Seung Min; Kim, Jong Kyu; Kim, Jin-Sang; Park, Hyung-Ho; Lee, Jong-Heun; Tuller, Harry L.; Yoon, Seok-Jin; Jang, Ho Won

    2012-01-01

    One of the top design priorities for semiconductor chemical sensors is developing simple, low-cost, sensitive and reliable sensors to be built in handheld devices. However, the need to implement heating elements in sensor devices, and the resulting high power consumption, remains a major obstacle for the realization of miniaturized and integrated chemoresistive thin film sensors based on metal oxides. Here we demonstrate structurally simple but extremely efficient all oxide chemoresistive sensors with ~90% transmittance at visible wavelengths. Highly effective self-activation in anisotropically self-assembled nanocolumnar tungsten oxide thin films on glass substrate with indium-tin oxide electrodes enables ultrahigh response to nitrogen dioxide and volatile organic compounds with detection limits down to parts per trillion levels and power consumption less than 0.2 microwatts. Beyond the sensing performance, high transparency at visible wavelengths creates opportunities for their use in transparent electronic circuitry and optoelectronic devices with avenues for further functional convergence. PMID:22905319

  6. Preparation and Characterization of the Porous (TiO2) Oxide Films of Nanostructure for Biological and Medical Applications

    SciTech Connect

    Fadl-Allah, Sahar A.; El Sherief, Rabab M.; Badawy, Waheed A.

    2007-02-14

    In this paper, galvanostatically and potentiostatically formed surface oxide film on titanium in H2O2 free and H2O2 containing H2SO4 solutions were investigated. Conventional electrochemical techniques and electrochemical impedance spectroscopy (EIS) measurements beside the scanning electron microscope (SEM) were used. In absence of H2O2, the impedance response indicated a stable thin oxide film which depends on the mode of anodization of the metal. However, the introduction of H2O2 into the solution resulted in significant changes in the film characteristics, which were reflected in the EIS results. The film characteristics were found to be affected by the mode of oxide film growth and polarization time. The H2O2 addition to the solution has led to a significant decrease in the corrosion resistance of the passive film. The electrochemical and the use of equivalent circuit models have led to the understanding of the film characteristics under different conditions.

  7. Characterization of sputtered iridium oxide thin films on planar and laser micro-structured platinum thin film surfaces for neural stimulation applications

    NASA Astrophysics Data System (ADS)

    Thanawala, Sachin

    Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.

  8. Memory switches based on metal oxide thin films

    NASA Technical Reports Server (NTRS)

    Ramesham, Rajeshuni (Inventor); Thakoor, Anilkumar P. (Inventor); Lambe, John J. (Inventor)

    1990-01-01

    MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

  9. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  10. Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory.

    PubMed

    Acharya, Susant K; Nallagatla, Raveendra Venkata; Togibasa, Octolia; Lee, Bo W; Liu, Chunli; Jung, Chang U; Park, Bae Ho; Park, Ji-Yong; Cho, Yunae; Kim, Dong-Wook; Jo, Janghyun; Kwon, Deok-Hwang; Kim, Miyoung; Hwang, Cheol Seong; Chae, Seung C

    2016-03-01

    Resistive switching memory, which is mostly based on polycrystalline thin films, suffers from wide distributions in switching parameters-including set voltage, reset voltage, and resistance-in their low- and high-resistance states. One of the most commonly used methods to overcome this limitation is to introduce inhomogeneity. By contrast, in this paper, we obtained uniform resistive switching parameters and sufficiently low forming voltage by maximizing the uniformity of an epitaxial thin film. To achieve this result, we deposited an SrFeOx/SrRuO3 heteroepitaxial structure onto an SrTiO3 (001) substrate by pulsed laser deposition, and then we deposited an Au top electrode by electron-beam evaporation. This device exhibited excellent bipolar resistance switching characteristics, including a high on/off ratio, narrow distribution of key switching parameters, and long data retention time. We interpret these phenomena in terms of a local, reversible phase transformation in the SrFeOx film between brownmillerite and perovskite structures. Using the brownmillerite structure and atomically uniform thickness of the heteroepitaxial SrFeOx thin film, we overcame two major hurdles in the development of resistive random-access memory devices: high forming voltage and broad distributions of switching parameters.

  11. Temperature dependent optical properties of pentacene films on zinc oxide

    SciTech Connect

    Helzel, J.; Jankowski, S.; El Helou, M.; Witte, G.; Heimbrodt, W.

    2011-11-21

    The optical transitions of pentacene films deposited on ZnO have been studied by absorption spectroscopy as a function of temperature in the range of room temperature down to 10 K. The pentacene films were prepared with thicknesses of 10 nm, 20 nm, and 100 nm on the ZnO-O(000-1) surface by molecular beam deposition. A unique temperature dependence has been observed for the two Davydov components of the excitons for different film thicknesses. At room temperature, the energetic positions of the respective absorption bands are the same for all films, whereas the positions differ more than 20 meV at 10 K caused by the very different expansion coefficients of pentacene and ZnO. Although the pentacene is just bonded via van der Waals interaction to the ZnO substrate, the very first pentacene monolayer (adlayer) is forced to keep the initial position on the ZnO surface and suffering, therefore, a substantial tensile strain. For all the subsequent pentacene monolayers, the strain is reduced step by step resulting electronically in a strong potential gradient at the interface.

  12. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition

    PubMed Central

    Haniam, P.; Kunsombat, C.; Chiangga, S.; Songsasen, A.

    2014-01-01

    Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures. PMID:24672354

  13. Synthesis of cobalt oxides thin films fractal structures by laser chemical vapor deposition.

    PubMed

    Haniam, P; Kunsombat, C; Chiangga, S; Songsasen, A

    2014-01-01

    Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures. PMID:24672354

  14. Photoassisted oxidation of oil films on water. Final performance report, January 1, 1990--March 31, 1993

    SciTech Connect

    Heller, A.

    1994-04-19

    The objective of the project has been the development of a technology for cleaning up oil spills on water through their photocatalytic oxidation. The photocatalyst used was titanium dioxide. Nanocrytalline TiO{sub 2}, of anatase or anatase/rutile phase, was bound to hollow ceramic microspheres of sufficiently low density to be buoyant on water. In the presence of these, under sunlight, oil films were photocatalytically oxidized by dissolved oxygen.

  15. Green nanochemistry: metal oxide nanoparticles and porous thin films from bare metal powders.

    PubMed

    Redel, Engelbert; Petrov, Srebri; Dag, Omer; Moir, Jonathon; Huai, Chen; Mirtchev, Peter; Ozin, Geoffrey A

    2012-01-01

    A universal, simple, robust, widely applicable and cost-effective aqueous process is described for a controlled oxidative dissolution process of micrometer-sized metal powders to form high-purity aqueous dispersions of colloidally stable 3-8 nm metal oxide nanoparticles. Their utilization for making single and multilayer optically transparent high-surface-area nanoporous films is demonstrated. This facile synthesis is anticipated to find numerous applications in materials science, engineering, and nanomedicine.

  16. Iron Oxide-Gold Core-Shell Nanoparticles and Thin-Film Assembly

    SciTech Connect

    Wang, Lingyan; Luo, Jin; Maye, Mathew M.; Fan, Quan; Qiang, Rendeng; Engelhard, Mark H.; Wang, Chong M.; Lin, Yuehe; Zhong, Chuan-Jian

    2005-05-04

    This paper reports findings of an investigation of the synthesis of monolayer-capped iron oxide and core (iron oxide)–shell (gold) nanocomposite and their assembly towards thin film materials. Pre-synthesized and size-defined iron oxide nanoparticles were used as seeding materials for the reduction of gold precursors, which was shown to be effective for coating the iron oxide cores with gold shells (Fe oxide@Au). The unique aspect of our synthesis is the formation of Fe oxide@Au core–shell nanoparticles with controllable surface properties. The novelty of our assembly strategy is the exploitation of the ligand-exchange reactivity at the gold shells for the thin film assembly of the core–shell nanoparticles. The core–shell nanocomposites and assemblies have been characterized using TEM, XRD, XPS, FTIR, TGA, and DCP-AES techniques. In addition to evidence from TEM detection of the change in particle size, UV-Vis observation of the change in the surface plasmon resonance band, and XRD detection of disappearance of the magnetite diffraction peaks after coating the gold shell, the formation of the core–shell morphology was further confirmed by DCP-AES composition analysis of Au and Fe in the molecularly-mediated thin film assembly of Fe oxide@Au particles. The interparticle ligand exchange–precipitation chemistry at the gold shell is to our knowledge the first example demonstrating the inter-shell reactivity for constructing thin films of Fe oxide@Au particles. The results have provided important insights into the design of interfacial reactivities via core–shell nanocomposites for magnetic, catalytic and biosensing applications.

  17. Single-Layer Light-Emitting Diodes Using Organometal Halide Perovskite/Poly(ethylene oxide) Composite Thin Films.

    PubMed

    Li, Junqiang; Bade, Sri Ganesh R; Shan, Xin; Yu, Zhibin

    2015-09-16

    Organometal halide perovskite and poly(ethylene oxide) composite thin films are studied. Single-layer light-emitting diodes using the composite thin film sandwiched between indium tin oxide and indium-gallium eutectic alloy exhibit a low turn-on voltage and high brightness because of the ionic conductivity of the composite film and the formation of a p-i-n homojunction. PMID:26247326

  18. Tungsten oxide (WO{sub 3}) thin films for application in advanced energy systems

    SciTech Connect

    Gullapalli, S. K.; Vemuri, R. S.; Manciu, F. S.; Enriquez, J. L.; Ramana, C. V.

    2010-07-15

    Inherent processes in coal gasification plants produce hazardous hydrogen sulfide (H{sub 2}S), which must be continuously and efficiently detected and removed before the fuel is used for power generation. An attempt has been made in this work to fabricate tungsten oxide (WO{sub 3}) thin films by radio-frequency reactive magnetron-sputter deposition. The impetus being the use of WO{sub 3} films for H{sub 2}S sensors in coal gasification plants. The effect of growth temperature, which is varied in the range of 30-500 deg. C, on the growth and microstructure of WO{sub 3} thin films is investigated. Characterizations made using scanning electron microscopy (SEM) and x-ray diffraction (XRD) indicate that the effect of temperature is significant on the microstructure of WO{sub 3} films. XRD and SEM results indicate that the WO{sub 3} films grown at room temperature are amorphous, whereas films grown at higher temperatures are nanocrystalline. The average grain-size increases with increasing temperature. WO{sub 3} films exhibit smooth morphology at growth temperatures {<=}300 deg. C while relatively rough at >300 deg. C. The analyses indicate that the nanocrystalline WO{sub 3} films grown at 100-300 deg. C could be the potential candidates for H{sub 2}S sensor development for application in coal gasification systems.

  19. The effect of bias voltage on the morphology and wettability of plasma deposited titanium oxide films

    NASA Astrophysics Data System (ADS)

    Liu, Wei; Li, Yan; Guo, Kai; Zhang, Jing

    2008-02-01

    Hydrophobic and hydrophilic films with titanium oxide inside were grown by radio frequency plasma enhanced chemical vapor deposition (RF--PECVD) on glass substrates. Bias voltage was used as an assistant for the deposition process. And a comparison was made between with and without the bias voltage. Titanium tetraisopropoxide (TTIP-Ti (OC 3H 7) 4) was used as the precursor compound. Film wettability was tested by water contact angle measurement (CAM). The water contact angle (WAC) of the film deposited in plasma without biased voltage was greater than 145°, while the WAC of the film deposited in plasma with biased voltage was less than 30°. The morphology of the deposited films was observed by scanning electron microscope (SEM). It is found that the films grown without bias voltage were covered with lots of nano grain and pores, but the surface of the films deposition with bias voltage was much dense. The chemical structure and property of the deposited films were analyzed by Fourier-transformed infrared spectroscopy (FTIR), while the plasma phase was investigated by optical emission spectroscopy (OES).

  20. Characterization of indium tin oxide films by RF-assisted DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Houng, Boen; Wang, Adam

    2012-05-01

    A unique design of RF (radio frequency) assisted DC (direct current) sputter was employed to deposit ITO (indium tin oxide) films on PET (polyethylene terephtalate) substrate. Effects of different RF portions of total power and oxygen gas flow on the properties of the films were investigated. It was found that the films became denser as the applied RF portion of the total power increased. This is due to higher momentum energy transfer by impinging ions increasing adatom diffusion on the films. Thus, a larger grained and less porous microstructure was presented in the films deposited at higher RF portions of the total power. However, a rougher surface morphology and minor crystallization was also found in the films prepared at 100% RF power. By wisely adjusting to a 50% RF portion of the total power, the electrical resistivity can reach a minimum value of 5.4 × 10-4 Ω cm associated with the carrier concentration of 7.0 × 1020 cm-3 and mobility of 17.4 cm2 V-1 s-1, respectively. In addition, the oxygen gas concentration in the sputtering chamber was found to play a key role in determining the quality of the films. As oxygen gas flowed at 2 sccm, the electrical resistivity was decreased to 3.9 × 10-4 Ω cm at a 50% RF portion of the total power. The electrical conduction mechanism, based on the grain boundary scattering, was correlated to the microstructure of the films in terms of grain size.

  1. Physical and Material Properties of Yttrium Barium Copper Oxide High Critical Temperature Superconducting Thin Films.

    NASA Astrophysics Data System (ADS)

    Ma, Qiyuan

    1990-01-01

    A simple method of using layered structures and rapid thermal annealing to produce Y_1 Ba_2 Cu_3 O_{7-x} (YBCO) superconducting thin films is presented. Material properties of the films depend strongly on the processing conditions, the film stoichiometry, and the substrates. The films with critical temperature (T_{ rm c}) higher than liquid nitrogen temperature (77 K) have been made on various substrates including magnesium oxide, sapphire, and silicon. The best film was obtained on a MgO substrate with T_{rm c} of 84 K. Silicon diffusion and reaction with oxygen during a high temperature anneal degrade the superconductivity of the film on a Si substrate. Using a buffer layer of gold, the Si-YBCO interaction is greatly reduced. Typical resistivity of the film shows a linear temperature dependence which may be attributed to an electron -phonon interaction. Anisotropic resistance behavior has been observed due to the layered structures. Different metal contacts to the YBCO films have been used to study the chemical and electrical properties of metal-YBCO film interfaces. Gold has been found nonreactive to YBCO film, thus, it has the lowest contact resistivity. Near the T_{rm c}, the contact resistivity of a Au-YBCO contact approaches zero. This may be due to the proximity effect. Other metals such as Pt, Pd, Sn and Ti, react with the YBCO film and form thin oxide layers at the interfaces. The oxide layer acts as an insulating barrier which forbids the proximity effect and causes a large contact resistivity. The structural and electrical properties of the Si-YBCO intermixed film have been studied for different thicknesses of the silicon layers. A novel patterning technique of using Si-YBCO intermixing has been developed for fabricating the YBCO superconducting device structures. A superconductor sample has a critical current value I _{rm c}. Below the I _{rm c} the material is superconducting, and above I_{rm c} the sample has a finite resistance. Based on this effect

  2. Properties of anodic oxides grown on a hafnium-tantalum-titanium thin film library

    NASA Astrophysics Data System (ADS)

    Ionut Mardare, Andrei; Ludwig, Alfred; Savan, Alan; Hassel, Achim Walter

    2014-02-01

    A ternary thin film combinatorial materials library of the valve metal system Hf-Ta-Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott-Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven.

  3. Stable ultrathin partially oxidized copper film electrode for highly efficient flexible solar cells

    PubMed Central

    Zhao, Guoqing; Wang, Wei; Bae, Tae-Sung; Lee, Sang-Geul; Mun, ChaeWon; Lee, Sunghun; Yu, Huashun; Lee, Gun-Hwan; Song, Myungkwan; Yun, Jungheum

    2015-01-01

    Advances in flexible optoelectronic devices have led to an increasing need for developing highly efficient, low-cost, flexible transparent conducting electrodes. Copper-based electrodes have been unattainable due to the relatively low optical transmission and poor oxidation resistance of copper. Here, we report the synthesis of a completely continuous, smooth copper ultra-thin film via limited copper oxidation with a trace amount of oxygen. The weakly oxidized copper thin film sandwiched between zinc oxide films exhibits good optoelectrical performance (an average transmittance of 83% over the visible spectral range of 400–800 nm and a sheet resistance of 9 Ω sq−1) and strong oxidation resistance. These values surpass those previously reported for copper-based electrodes; further, the record power conversion efficiency of 7.5% makes it clear that the use of an oxidized copper-based transparent electrode on a polymer substrate can provide an effective solution for the fabrication of flexible organic solar cells. PMID:26538008

  4. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    SciTech Connect

    Hänninen, Tuomas Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  5. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; Williams, Garth; Thieme, Juergen; Nykypanchuk, Dmytro; Li, Li; Muto, Atsushi; Chen-Wiegart, Yu-chen Karen

    2016-08-01

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and wide angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100-200 nm wide by 1 μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. Utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.

  6. Nitrogen dioxide sensing properties of sprayed tungsten oxide thin film sensor: Effect of film thickness.

    PubMed

    Ganbavle, V V; Mohite, S V; Agawane, G L; Kim, J H; Rajpure, K Y

    2015-08-01

    We report a study on effect of film thickness on NO2 sensing properties of sprayed WO3 thin films. WO3 thin films varying in thicknesses are deposited onto the glass substrates by simple spray pyrolysis technique by varying the volume of spray solution.Thin film gas sensors are characterized by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and photoluminescence (PL) techniques to study their physical properties. Film having thickness 745nm has shown highest gas response of 97% with 12 and 412s response and recovery times, respectively towards 100ppm NO2 concentration. Gas response of 20% is observed towards 10ppm NO2 at 200°C operating temperature. Sensitivity of the optimal sensor is 0.83%/ppm when operating at 200°C with 10ppm lower detection limit. The response of the sensor is reproducible and WO3 films are highly selective towards NO2 in presence of mist of various interfering gases viz. H2S, NH3, LPG, CO and SO2. PMID:25898119

  7. Polyelectrolyte-mediated assembly of copper-phthalocyanine tetrasulfonate multilayers and the subsequent production of nanoparticulate copper oxide thin films.

    PubMed

    Chickneyan, Zarui Sara; Briseno, Alejandro L; Shi, Xiangyang; Han, Shubo; Huang, Jiaxing; Zhou, Feimeng

    2004-07-01

    An approach to producing films of nanometer-sized copper oxide particulates, based on polyelectrolyte-mediated assembly of the precursor, copper(II)phthalocyanine tetrasulfonate (CPTS), is described. Multilayered CPTS and polydiallyldimethylammonium chloride (PDADMAC) were alternately assembled on different planar substrates via the layer-by-layer (LbL) procedure. The growth of CPTS multilayers was monitored by UV-visible spectrometry and quartz crystal microbalance (QCM) measurements. Both the UV-visible spectra and the QCM data showed that a fixed amount of CPTS could be attached to the substrate surface for a given adsorption cycle. Cyclic voltammograms at the CPTS/PDADMAC-covered gold electrode exhibited a decrease in peak currents with the layer number, indicating that the permeability of CPTS multilayers on the electrodes had diminished. When these CPTS multilayered films were calcined at elevated temperatures, uniform thin films composed of nanoparticulate copper oxide could be produced. Ellipsometry showed that the thickness of copper oxide nanoparticulate films could be precisely tailored by varying the thickness of CPTS multilayer films. The morphology and roughness of CPTS multilayer and copper oxide thin films were characterized by atomic force microscopy. X-ray diffraction (XRD) measurements indicated that these thin films contained both CuO and Cu2O nanoparticles. The preparation of such copper oxide thin films with the use of metal complex precursors represents a new route for the synthesis of inorganic oxide films with a controlled thickness.

  8. A novel thin film solid oxide fuel cell for microscale energy conversion

    SciTech Connect

    Jankowiski, A F; Morse, J D

    1999-05-01

    A novel approach for the fabrication and assembly of a solid oxide fuel cell system is described which enables effective scaling of the fuel delivery, mainfold, and fuel cell stack components for applications in miniature and microscale energy conversion. Electrode materials for solid oxide fuel cells are developed using sputter deposition techniques. A thin film anode is formed by codeposition of nickel and yttria-stabilized zirconia (YSZ). This approach provides a mixed conducting interfacial layer between the nickel electrode and electrolyte layer. Similarly, a thin film cathode is formed by co-deposition of silver and yttria-stabilized zirconia. Additionally, sputter deposition of yttria-stabilized zirconia thin film electrolyte enables high quality, continuous films to be formed having thickness on the order of 1-2 {micro}m. This will effectively lower the temperature of operation for the fuel cell stack significantly below the traditional ranges at which solid oxide electrolyte systems are operated (600--1000 C), thereby rendering this fuel cell system suitable for miniaturization. Scaling towards miniaturization is accomplished by utilizing novel micromaching approaches which allow manifold channels and fuel delivery system to be formed within the substrate which the thin film fuel cell stack is fabricated on, thereby circumventing the need for bulky manifold components which are not directly scalable.

  9. Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

    SciTech Connect

    Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; Esvan, Jerome; Lafont, Marie-Christine; Scheid, Emmanuel; Veith, Gabriel M.; Vahlas, Constantin

    2015-12-02

    Ti/Al2O3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barrier properties but an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.

  10. Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties

    DOE PAGES

    Baggetto, Loic; Charvillat, Cedric; Thebault, Yannick; Esvan, Jerome; Lafont, Marie-Christine; Scheid, Emmanuel; Veith, Gabriel M.; Vahlas, Constantin

    2015-12-02

    Ti/Al2O3 bilayer stacks are used as model systems to investigate the role of atomic layer deposition (ALD) and chemical vapor deposition (CVD) to prepare 30-180 nm thick amorphous alumina films as protective barriers for the medium temperature oxidation (500-600⁰C) of titanium, which is employed in aeronautic applications. X-ray diffraction (XRD), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) results show that the films produced from the direct liquid injection (DLI) CVD of aluminum tri-isopropoxide (ATI) are poor oxygen barriers. The films processed using the ALD of trimethylaluminum (TMA) show good barrier properties butmore » an extensive intermixing with Ti which subsequently oxidizes. In contrast, the films prepared from dimethyl aluminum isopropoxide (DMAI) by CVD are excellent oxygen barriers and show little intermixing with Ti. Overall, these measurements correlate the effect of the alumina coating thickness, morphology, and stoichiometry resulting from the preparation method to the oxidation barrier properties, and show that compact and stoichiometric amorphous alumina films offer superior barrier properties.« less

  11. Fluorine compounds for doping conductive oxide thin films

    DOEpatents

    Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

    2013-04-23

    Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

  12. Microwave-assisted oxidation of phosphite-type antioxidant additives in polyethylene film extracts.

    PubMed

    Garrido-López, Alvaro; Sancet, Idoia; Montaño, Patricia; González, Rosario; Tena, María Teresa

    2007-12-21

    Two oxidation methods for reducing the analysis time required to determine Irgafos 126 and Irgafos 168 by pressurised liquid extraction (PLE) and high-performance liquid chromatography (HPLC) were optimised and compared. Analyte oxidation was performed using sodium peroxodisulphate (SPD) as oxidation agent and two different heating methods: with a hotplate and a reflux apparatus; and with a microwave oven. The influence of variables, such as oxidation time, temperature and sodium peroxodisulphate concentration was studied using a central composite design in order to optimise experimental conditions. A temperature of 68 degrees C for 2.5h and a SPD concentration of around 6 x 10(-4)M were required for conventional oxidation, while a temperature of 120 degrees C for 30 min and a SPD concentration of 4 x 10(-4)M were found to be the best for microwave-assisted oxidation. After optimising the methods, their repeatability values were calculated and the two methods were applied to a solution containing other additives in order to check that they were not affected by the oxidation treatment and thus confirm that the methods could be used for oxidation of I126 and I168 in pressurised liquid extracts of polyethylene film samples before their determination by HPLC. Finally, the methods were applied to the analysis of antioxidants in polyethylene film samples.

  13. Polyelectrolyte/Graphene Oxide Barrier Film for Flexible OLED.

    PubMed

    Yang, Seung-Yeol; Park, Jongwhan; Kim, Yong-Seog

    2015-10-01

    Ultra-thin flexible nano-composite barrier layer consists of graphene oxide and polyelectrolyte was prepared using the layer-by-layer processing method. Microstructures of the barrier layer was optimized via modifying coating conditions and inducing chemical reactions. Although the barrier layer consists of hydrophilic polyelectrolyte was not effective in blocking the water vapor permeation, the chemical reduction of graphene oxide as well as conversion of polyelectrolyte to hydrophobic nature were very effective in reducing the permeation.

  14. Drying of films formed by ordered poly(ethylene oxide)-poly(propylene oxide) block copolymer gels.

    PubMed

    Gu, Zhiyong; Alexandridis, Paschalis

    2005-03-01

    The drying of hydrogel films formed by poly(ethylene oxide)-poly(propylene oxide) (PEO-PPO) block copolymers (Pluronic P105 and Pluronic L64) is investigated at various air relative humidity (RH) conditions in the range 11-94%. These amphiphilic block copolymers self-assemble to form a variety of ordered (lyotropic liquid crystalline) structures as the water content decreases. The amount of water lost increases linearly with the drying time initially (constant rate region, stage I). After this linear region, a falling rate is observed (stage II). The drying rate increases with decreasing RH, thus greatly shortening the drying time. A decrease of the initial film thickness or a decrease in the initial water content shortens the drying time; however, the drying mechanism remains the same. Analysis of the experimental data shows that the hydration level in the Pluronic hydrogel mainly determines the drying rate, rather than the type of ordered structure formed. Two distinct regions (liquid/gel and solid/crystalline) are observed in the drying isotherm for PEO-PPO block copolymers and homopolymer poly(ethylene glycol)s. A model for one-dimensional water diffusion is used to fit the experimental drying results at different RH, initial film thickness, and initial water content conditions. The model accounts for the shrinkage of the film during drying and for a water diffusion coefficient that is a function of the water concentration in the film. For the experimental conditions considered here, the Biot number (Bi) is less than unity and the drying is mainly limited by evaporation at the film surface. The diffusion model is used to obtain information for cases where Bi > 1.

  15. Structural, Electrical and Optical Properties of Gallium Doped Zinc Oxide Thin Films Prepared by Electron Beam Evaporation Technique

    SciTech Connect

    Nagarani, S.; Sanjeeviraja, C.

    2011-07-15

    High quality gallium doped zinc oxide (GZO) films are prepared by electron beam evaporation technique. The effect of substrate temperature on structural, electrical and optical properties was studied in detail. The prepared films are polycrystalline in nature with c-axis perpendicular to the substrate. The resistivity of the film decreases and the optical transparency increases as the substrate temperature increases from room temperature to 150 deg. C. The film produce the optical band gap of 3.47 eV.

  16. On the phase formation of sputtered hafnium oxide and oxynitride films

    SciTech Connect

    Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M.; Konstantinidis, S.; Renaux, F.; Cossement, D.; Munnik, F.

    2010-07-15

    Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O{sub 2}-N{sub 2} atmosphere. It is shown that the presence of N{sub 2} allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O{sub 2} partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O{sup -} ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O{sup -} ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O{sup -} ion flux without N{sub 2} addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO{sub 2} is independent from the O{sup -} bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO{sub 2} crystal structure at the expense of the monoclinic HfO{sub 2} one.

  17. Green synthesis of high conductivity silver nanoparticle-reduced graphene oxide composite films

    NASA Astrophysics Data System (ADS)

    Dinh, D. A.; Hui, K. S.; Hui, K. N.; Cho, Y. R.; Zhou, Wei; Hong, Xiaoting; Chun, Ho-Hwan

    2014-04-01

    A green facile chemical approach to control the dimensions of Ag nanoparticles-graphene oxide (AgNPs/GO) composites was performed by the in situ ultrasonication of a mixture of AgNO3 and graphene oxide solutions with the assistance of vitamin C acting as an environmentally friendly reducing agent at room temperature. With decreasing ultrasonication time, the size of the Ag nanoparticles decreased and became uniformly distributed over the surface of the GO nanosheets. The as-prepared AgNPs/rGO composite films were then formed using a spin coating method and reduced at 500 °C under N2/H2 gas flow for 1 h. Four-point probe measurements showed that the sheet resistance of the AgNPs/rGO films decreased with decreasing AgNPs size. The lowest sheet resistance of 270 Ω/sq was obtained in the film corresponding to 1 min of ultrasonication, which showed a 40 times lower resistivity than the rGO film (10.93 kΩ/sq). The formation mechanisms of the as-prepared AgNPs/rGO films are proposed. This study provides a guide to controlling the dimensions of AgNPs/rGO films, which might hold promise as advanced materials for a range of analytical applications, such as catalysis, sensors and microchips.

  18. Enhanced Piezoelectric Energy Harvesting Performance of Flexible PVDF-TrFE Bilayer Films with Graphene Oxide.

    PubMed

    Bhavanasi, Venkateswarlu; Kumar, Vipin; Parida, Kaushik; Wang, Jiangxin; Lee, Pooi See

    2016-01-13

    Ferroelectric materials have attracted interest in recent years due to their application in energy harvesting owing to its piezoelectric nature. Ferroelectric polymers are flexible and can sustain larger strains compared to inorganic counterparts, making them attractive for harvesting energy from mechanical vibrations. Herein, we report, for the first time, the enhanced piezoelectric energy harvesting performance of the bilayer films of poled poly(vinylidene fluoride-trifluoroethylene) [PVDF-TrFE] and graphene oxide (GO). The bilayer film exhibits superior energy harvesting performance with a voltage output of 4 V and power output of 4.41 μWcm(-2) compared to poled PVDF-TrFE films alone (voltage output of 1.9 V and power output of 1.77 μWcm(-2)). The enhanced voltage and power output in the presence of GO film is due to the combined effect of electrostatic contribution from graphene oxide, residual tensile stress, enhanced Young's modulus of the bilayer films, and the presence of space charge at the interface of the PVDF-TrFE and GO films, arising from the uncompensated polarization of PVDF-TrFE. Higher Young's modulus and dielectric constant of GO led to the efficient transfer of mechanical and electrical energy.

  19. Enhanced Piezoelectric Energy Harvesting Performance of Flexible PVDF-TrFE Bilayer Films with Graphene Oxide.

    PubMed

    Bhavanasi, Venkateswarlu; Kumar, Vipin; Parida, Kaushik; Wang, Jiangxin; Lee, Pooi See

    2016-01-13

    Ferroelectric materials have attracted interest in recent years due to their application in energy harvesting owing to its piezoelectric nature. Ferroelectric polymers are flexible and can sustain larger strains compared to inorganic counterparts, making them attractive for harvesting energy from mechanical vibrations. Herein, we report, for the first time, the enhanced piezoelectric energy harvesting performance of the bilayer films of poled poly(vinylidene fluoride-trifluoroethylene) [PVDF-TrFE] and graphene oxide (GO). The bilayer film exhibits superior energy harvesting performance with a voltage output of 4 V and power output of 4.41 μWcm(-2) compared to poled PVDF-TrFE films alone (voltage output of 1.9 V and power output of 1.77 μWcm(-2)). The enhanced voltage and power output in the presence of GO film is due to the combined effect of electrostatic contribution from graphene oxide, residual tensile stress, enhanced Young's modulus of the bilayer films, and the presence of space charge at the interface of the PVDF-TrFE and GO films, arising from the uncompensated polarization of PVDF-TrFE. Higher Young's modulus and dielectric constant of GO led to the efficient transfer of mechanical and electrical energy. PMID:26693844

  20. On the possibility to grow zinc oxide-based transparent conducting oxide films by hot-wire chemical vapor deposition

    SciTech Connect

    Abrutis, Adulfas Silimavicus, Laimis; Kubilius, Virgaudas; Murauskas, Tomas; Saltyte, Zita; Kuprenaite, Sabina; Plausinaitiene, Valentina

    2014-03-15

    Hot-wire chemical vapor deposition (HW-CVD) was applied to grow zinc oxide (ZnO)-based transparent conducting oxide (TCO) films. Indium (In)-doped ZnO films were deposited using a cold wall pulsed liquid injection CVD system with three nichrome wires installed at a distance of 2 cm from the substrate holder. The wires were heated by an AC current in the range of 0–10 A. Zn and In 2,2,6,6-tetramethyl-3,5-heptanedionates dissolved in 1,2-dimethoxyethane were used as precursors. The hot wires had a marked effect on the growth rates of ZnO, In-doped ZnO, and In{sub 2}O{sub 3} films; at a current of 6–10 A, growth rates were increased by a factor of ≈10–20 compared with those of traditional CVD at the same substrate temperature (400 °C). In-doped ZnO films with thickness of ≈150 nm deposited on sapphire-R grown at a wire current of 9 A exhibited a resistivity of ≈2 × 10{sup −3} Ωcm and transparency of >90% in the visible spectral range. These initial results reveal the potential of HW-CVD for the growth of TCOs.

  1. Fluorine doped tin oxide (FTO) thin film as transparent conductive oxide (TCO) for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Muthukumar, Anusha; Rey, Germain; Giusti, Gael; Consonni, Vincent; Appert, Estelle; Roussel, Hervé; Dakshnamoorthy, Arivuoli; Bellet, Daniel

    2013-02-01

    Textured FTO thin films were deposited on corning glass substrates at 420°C by ultrasonic spray pyrolysis method. The electrical, optical and structural properties of the prepared functional FTO thin films were investigated. Homogeneous textured columnar grain morphology was observed through FESEM. As prepared thin films exhibits polycrystalline cassiterite structure with preferred orientation along (200). FTO is a promising TCO as front electrodes of thin film solar cells because of their good electrical properties (4.3×10-4ω.cm) combined with high transmission properties (86%).

  2. Effect of oxygen plasma on the properties of tantalum oxide films

    SciTech Connect

    Kalygina, V. M. Zarubin, A. N.; Novikov, V. A.; Petrova, Yu. S.; Skakunov, M. S.; Tolbanov, O. P.; Tyazhev, A. V.; Yaskevich, T. M.

    2010-09-15

    The effect of oxygen plasma on the leakage current, permittivity, and the dielectric loss tangent of Ta{sub 2}O{sub 5} thin layers (300-400 nm) is studied. It is suggested to treat tantalum oxide films in oxygen plasma to control their electrical and dielectric characteristics.

  3. Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

    SciTech Connect

    Nash, C. R.; Fenton, J. C.; Constantino, N. G. N.; Warburton, P. A.

    2014-12-14

    We report on the electrical characterisation of a series of thin amorphous chromium oxide (CrO{sub x}) films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the CrO{sub x} films was varied from 28 Ω/◻ to 32.6 kΩ/◻. The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/◻ to above 20 GΩ/◻. All of the films measured displayed linear current–voltage characteristics at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium–silicon nanowires, interfaces between niobium–silicon and chromium oxide are required. We also characterised the contact resistance for one CrO{sub x} composition at an interface with niobium–silicon. We found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.14 mΩcm{sup 2}, much lower than the value for direct CrO{sub x} to niobium–silicon contact. We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.

  4. Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film

    NASA Astrophysics Data System (ADS)

    Huang, Hung Ji; Liu, Bo-Heng

    2015-12-01

    The energy transformation of vertical incident light into energy for a chemical reaction is demonstrated in the endothermic oxidation of ammonium ions in a spinning disk reactor. The plasmonic enhancement on photocatalytic reaction demonstrated the generation of quantum hot charge on 1D quantum well of platinum thin film.

  5. Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes.

    PubMed

    Yu, LePing; Tune, Daniel; Shearer, Cameron; Shapter, Joseph

    2015-09-01

    Graphene oxide (GO) sheets have been used as the surfactant to disperse single-walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes that are applied to silicon to form a heterojunction that can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes, and the influence of both factors on the performance of the solar cell has been studied. The degradation rate of the GO/CNT-silicon devices under ambient conditions has also been explored. The influence of the film thickness on the device performance is related to the interplay of two competing factors, namely, sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film, and GO is able to protect the silicon from oxidation in the atmosphere.

  6. PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells.

    PubMed

    Yu, Wonjong; Cho, Gu Young; Hong, Soonwook; Lee, Yeageun; Kim, Young Beom; An, Jihwan; Cha, Suk Won

    2016-10-14

    Yttria-stabilized zirconia (YSZ) thin film electrolyte deposited by plasma enhanced atomic layer deposition (PEALD) was investigated. PEALD YSZ-based bi-layered thin film electrolyte was employed for thin film solid oxide fuel cells on nanoporous anodic aluminum oxide substrates, whose electrochemical performance was compared to the cell with sputtered YSZ-based electrolyte. The cell with PEALD YSZ electrolyte showed higher open circuit voltage (OCV) of 1.0 V and peak power density of 182 mW cm(-2) at 450 °C compared to the one with sputtered YSZ electrolyte(0.88 V(OCV), 70 mW cm(-2)(peak power density)). High OCV and high power density of the cell with PEALD YSZ-based electrolyte is due to the reduction in ohmic and activation losses as well as the gas and electrical current tightness.

  7. PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Yu, Wonjong; Cho, Gu Young; Hong, Soonwook; Lee, Yeageun; Kim, Young Beom; An, Jihwan; Cha, Suk Won

    2016-10-01

    Yttria-stabilized zirconia (YSZ) thin film electrolyte deposited by plasma enhanced atomic layer deposition (PEALD) was investigated. PEALD YSZ-based bi-layered thin film electrolyte was employed for thin film solid oxide fuel cells on nanoporous anodic aluminum oxide substrates, whose electrochemical performance was compared to the cell with sputtered YSZ-based electrolyte. The cell with PEALD YSZ electrolyte showed higher open circuit voltage (OCV) of 1.0 V and peak power density of 182 mW cm-2 at 450 °C compared to the one with sputtered YSZ electrolyte(0.88 V(OCV), 70 mW cm-2(peak power density)). High OCV and high power density of the cell with PEALD YSZ-based electrolyte is due to the reduction in ohmic and activation losses as well as the gas and electrical current tightness.

  8. PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells.

    PubMed

    Yu, Wonjong; Cho, Gu Young; Hong, Soonwook; Lee, Yeageun; Kim, Young Beom; An, Jihwan; Cha, Suk Won

    2016-10-14

    Yttria-stabilized zirconia (YSZ) thin film electrolyte deposited by plasma enhanced atomic layer deposition (PEALD) was investigated. PEALD YSZ-based bi-layered thin film electrolyte was employed for thin film solid oxide fuel cells on nanoporous anodic aluminum oxide substrates, whose electrochemical performance was compared to the cell with sputtered YSZ-based electrolyte. The cell with PEALD YSZ electrolyte showed higher open circuit voltage (OCV) of 1.0 V and peak power density of 182 mW cm(-2) at 450 °C compared to the one with sputtered YSZ electrolyte(0.88 V(OCV), 70 mW cm(-2)(peak power density)). High OCV and high power density of the cell with PEALD YSZ-based electrolyte is due to the reduction in ohmic and activation losses as well as the gas and electrical current tightness. PMID:27595193

  9. Characterization of Monolayer Formation on Aluminum-Doped Zinc Oxide Thin Films

    SciTech Connect

    Rhodes,C.; Lappi, S.; Fischer, D.; Sambasivan, S.; Genzer, J.; Franzen, S.

    2008-01-01

    The optical and electronic properties of aluminum-doped zinc oxide (AZO) thin films on a glass substrate are investigated experimentally and theoretically. Optical studies with coupling in the Kretschmann configuration reveal an angle-dependent plasma frequency in the mid-IR for p-polarized radiation, suggestive of the detection of a Drude plasma frequency. These studies are complemented by oxygen depletion density functional theory studies for the calculation of the charge carrier concentration and plasma frequency for bulk AZO. In addition, we report on the optical and physical properties of thin film adlayers of n-hexadecanethiol (HDT) and n-octadecanethiol (ODT) self-assembled monolayers (SAMs) on AZO surfaces using reflectance FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), contact angle, and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Our characterization of the SAM deposition onto the AZO thin film reveals a range of possible applications for this conducting metal oxide.

  10. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method.

    PubMed

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-07-08

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]n(RS)[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures.

  11. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method

    PubMed Central

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-01-01

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]nRS[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures. PMID:26153533

  12. Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Juneja, Sucheta; Poletayev, Sergey D.; Fomchenkov, Sergey; Khonina, Svetlana N.; Skidanov, Roman V.; Kazanskiy, Nikolay L.

    2016-08-01

    Indium tin oxide (ITO) films have been a subject of extensive studies in fabrication of micro-electronic devices for opto-electronic applications ranging from anti-reflection coatings to transparent contacts in photovoltaic devices. In this paper, a new and effective way of reactive ion etching of a conducting indium-tin oxide (ITO) film with Carbon tetrachloride (CCl4) has been investigated. CCl4 plasma containing an addition of gases mixture of dissociated argon and oxygen were used. Oxygen is added to increase the etchant percentage whereas argon was used for stabilization of plasma. The etching characteristics obtained with these gaseous mixtures were explained based on plasma etch chemistry and etching regime of ITO films. An etch rate as high as ∼20 nm/min can be achieved with a controlled process parameter such as power density, total flow rate, composition of reactive gases gas and pressure. Our Investigation represents some of the extensive work in this area.

  13. Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness

    SciTech Connect

    Wang Cong; Jin Kuijuan; Zhao Ruiqiang; Lu Huibin; Guo Haizhong; Ge Chen; He Meng; Wang Can; Yang Guozhen

    2011-05-02

    One order larger photovoltage is obtained with critical thicknesses of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} films in both kinds of heterostructures of La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/SrTiO{sub 3} (0.8 wt % Nb-doped) and La{sub 0.9}Sr{sub 0.1}MnO{sub 3}/Si fabricated at various oxygen pressures. Our self-consistent calculation reveals that the critical thickness of the La{sub 0.9}Sr{sub 0.1}MnO{sub 3} film with the ultimate value of photovoltage is just the thickness of the depletion layer of La{sub 0.9}Sr{sub 0.1}MnO{sub 3} in both heterojunctions, respectively.

  14. Strain-induced water dissociation on supported ultrathin oxide films

    PubMed Central

    Song, Zhenjun; Fan, Jing; Xu, Hu

    2016-01-01

    Controlling the dissociation of single water molecule on an insulating surface plays a crucial role in many catalytic reactions. In this work, we have identified the enhanced chemical reactivity of ultrathin MgO(100) films deposited on Mo(100) substrate that causes water dissociation. We reveal that the ability to split water on insulating surface closely depends on the lattice mismatch between ultrathin films and the underlying substrate, and substrate-induced in-plane tensile strain dramatically results in water dissociation on MgO(100). Three dissociative adsorption configurations of water with lower energy are predicted, and the structural transition going from molecular form to dissociative form is almost barrierless. Our results provide an effective avenue to achieve water dissociation at the single-molecule level and shed light on how to tune the chemical reactions of insulating surfaces by choosing the suitable substrates. PMID:26953105

  15. Atomic Layer Deposition of Metal Oxide Thin Films on Metallic Substrates

    NASA Astrophysics Data System (ADS)

    Foroughi Abari, Ali

    Atomic layer deposition (ALD) is a powerful ultra-thin film deposition technique that uses sequential self-limiting surface reactions to provide conformal atomic scale film growth. Deposition of ALD films on many substrate systems has been studied before; however, limited data is available on deposition on metallic surfaces. The investigation of the growth of Al 2O3, HfO2, and ZrO2 as three technologically important metal oxides on metallic substrates is the subject of this thesis. Al2O3, HfO2, and ZrO2 films were grown by ALD on silicon, as a well-studied substrate, in different operating conditions to investigate the effect of process parameters on film properties. To study the growth of oxides on metals, thin metallic substrates were prepared by sputter deposition on silicon wafers and then were transferred to the ALD chamber where the film growth was monitored by in-situ spectroscopic ellipsometry. The transfer was performed via a load lock system without breaking the vacuum to preserve the pristine metal surface. Formation of a thin interfacial layer of metal oxide was observed during the initial moments of plasma enhanced ALD, that was due to the exposure of metal surface to oxygen plasma. In-situ spectroscopic ellipsometry was used to accurately measure the thickness change of the growing films including the interfacial layer. The thickness of this interfacial oxide layer depended on various process parameters including deposition temperature, order of precursors and plasma pulse length. The interfacial oxide layer was absent during the conventional thermal ALD. However, thermal ALD of oxides on metals exhibited substrate-inhibited growth, especially at higher deposition temperatures. With the knowledge of ALD growth characteristics on metals, metal-insulator-metal (MIM) devices were fabricated by both thermal and plasma enhanced ALD and electrically characterized. The presence of the interfacial oxide layer altered the device performance by changing the

  16. Growth morphology of thin films on metallic and oxide surfaces.

    PubMed

    Krupski, Aleksander

    2014-02-01

    In this work we briefly review recent investigations concerning the growth morphology of thin metallic films on the Mo(110) and Ni3Al(111) surfaces, and Fe and copper phthalocyanine (C32H16N8Cu) on the Al2O3/Ni3Al(111) surface. Comparison of Ag, Au, Sn, and Pb growth on the Mo(110) surface has shown a number of similarities between these adsorption systems, except that surface alloy formation has only been observed in the case of Sn and Au. In the Pb/Mo(110) and Pb/Ni3Al(111) adsorption systems selective formation of uniform Pb island heights during metal thin film growth has been observed and interpreted in terms of quantum size effects. Furthermore, our studies showed that Al2O3 on Ni3Al(111) exhibits a large superstructure in which the unit cell has a commensurate relation with the substrate lattice. In addition, copper phthalocyanine chemisorbed weakly onto an ultra-thin Al2O3 film on Ni3Al(111) and showed a poor template effect of the Al2O3/Ni3Al(111) system. In the case of iron cluster growth on Al2O3/Ni3Al(111) the nucleation sites were independent of deposition temperature, yet the cluster shape showed a dependence. In this system, Fe clusters formed a regular hexagonal lattice on the Al2O3/Ni3Al(111). PMID:24445588

  17. Study of Interfacial Interactions Using Thing Film Surface Modification: Radiation and Oxidation Effects in Materials

    SciTech Connect

    Sridharan, Kumar; Zhang, Jinsuo

    2014-01-09

    Interfaces play a key role in dictating the long-term stability of materials under the influence of radiation and high temperatures. For example, grain boundaries affect corrosion by way of providing kinetically favorable paths for elemental diffusion, but they can also act as sinks for defects and helium generated during irradiation. Likewise, the retention of high-temperature strength in nanostructured, oxide-dispersion strengthened steels depends strongly on the stoichiometric and physical stability of the (Y, Ti)-oxide particles/matrix interface under radiation and high temperatures. An understanding of these interfacial effects at a fundamental level is important for the development of materials for extreme environments of nuclear reactors. The goal of this project is to develop an understanding stability of interfaces by depositing thin films of materials on substrates followed by ion irradiation of the film-substrate system at elevated temperatures followed by post-irradiation oxidation treatments. Specifically, the research will be performed by depositing thin films of yttrium and titanium (~500 nm) on Fe-12%Cr binary alloy substrate. Y and Ti have been selected as thin-film materials because they form highly stable protective oxides layers. The Fe-12%Cr binary alloy has been selected because it is representative of ferritic steels that are widely used in nuclear systems. The absence of other alloying elements in this binary alloy would allow for a clearer examination of structures and compositions that evolve during high-temperature irradiations and oxidation treatments. The research is divided into four specific tasks: (1) sputter deposition of 500 nm thick films of Y and Ti on Fe-12%Cr alloy substrates, (2) ion irradiation of the film-substrate system with 2MeV protons to a dose of 2 dpa at temperatures of 300°C, 500°C, and 700°C, (3) oxidation of as-deposited and ion-irradiated samples in a controlled oxygen environment at 500°C and 700°C, (4

  18. Effects of O 7+ swift heavy ion irradiation on indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Gokulakrishnan, V.; Parthiban, S.; Elangovan, E.; Ramamurthi, K.; Jeganathan, K.; Kanjilal, D.; Asokan, K.; Martins, R.; Fortunato, E.

    2011-08-01

    Indium oxide thin films deposited by spray pyrolysis were irradiated by 100 MeV O 7+ ions with different fluences of 5 × 10 11, 1 × 10 12 and 1 × 10 13 ions/cm 2. X-ray diffraction analysis confirmed the structure of indium oxide with cubic bixbyite. The strongest (2 2 2) orientation observed from the as-deposited films was shifted to (4 0 0) after irradiation. Furthermore, the intensity of the (4 0 0) orientation was decreased with increasing fluence together with an increase in (2 2 2) intensity. Films irradiated with maximum fluence exhibited an amorphous component. The mobility of the as-deposited indium oxide films was decreased from ˜78.9 to 43.0 cm 2/V s, following irradiation. Films irradiated with a fluence of 5 × 10 11 ions/cm 2 showed a better combination of electrical properties, with a resistivity of 4.57 × 10 -3 Ω cm, carrier concentration of 2.2 × 10 19 cm -3 and mobility of 61.0 cm 2/V s. The average transmittance obtained from the as-deposited films decreased from ˜81% to 72%, when irradiated with a fluence of 5 × 10 11 ions/cm 2. The surface microstructures confirmed that the irregularly shaped grains seen on the surface of the as-deposited films is modified as "radish-like" morphology when irradiated with a fluence of 5 × 10 11 ions/cm 2.

  19. Effects of Oxide Film on the Corrosion Resistance of Titanium Grade 7 in Fluoride-Containing NaCl Brines

    SciTech Connect

    Lian, T; Whalen, M T; Wong, L

    2004-11-30

    The effects of oxide film on the corrosion behavior of Titanium Grade 7 (0.12-0.25% Pd) in fluoride-containing NaCl brines have been investigated. With the presence of a 0.6 {micro}m thick oxide layer, the annealed Ti grade 7 exhibited a significant improvement on the anodic polarization behavior. However, the oxide film did not demonstrate sustainable corrosion resistance in fluoride-containing solutions.

  20. Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

    PubMed

    Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

    2014-11-01

    The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future. PMID:25274424

  1. Thermal Conductivity of Amorphous Indium-Gallium-Zinc Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Toru; Yagi, Takashi; Oka, Nobuto; Jia, Junjun; Yamashita, Yuichiro; Hattori, Koichiro; Seino, Yutaka; Taketoshi, Naoyuki; Baba, Tetsuya; Shigesato, Yuzo

    2013-02-01

    We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In:Ga:Zn= 1:1:0.6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O2 sputtering gas. The carrier density of the films was systematically controlled from 1014 to >1019 cm-3 by varying the O2 flow ratio. Their Hall mobility was slightly higher than 10 cm2·V-1·s-1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ˜5.4×10-7 m2·s-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4 W·m-1·K-1.

  2. Simple method of fabricating copper oxide selective absorber films for photothermal conversion of solar energy

    SciTech Connect

    Banerjee, H.D.; Viswanathan, R.; Rao, D.R.; Acharya, H.N.

    1988-11-01

    Highly stable selective absorptive coatings of copper oxides were deposited on commercially available galvanized iron substrates by a dip-and-dry technique. The optothermal, structural, and optical properties of these films were investigated. The deposition parameters for an optimum selective absorptive film were determined. A typical such coating gave solar absorptance (AM1) of 0.91 and thermal emittance (100/sup 0/C) of 0.17. Up to 300/sup 0/C, the film was adherent and stable, having a top layer of CuO and an under layer of Cu/sub x/O of varying composition (x=1 to 2). However, increasing the temperature beyond 400/sup 0/C converted the film to CuO only.

  3. Nonlinear optical properties of zinc oxide doped bismuth thin films using Z-scan technique

    NASA Astrophysics Data System (ADS)

    Abed, S.; Bouchouit, K.; Aida, M. S.; Taboukhat, S.; Sofiani, Z.; Kulyk, B.; Figa, V.

    2016-06-01

    ZnO doped Bi thin films were grown on glass substrates by spray ultrasonic technique. This paper presents the effect of Bi doping concentration on structural and nonlinear optical properties of zinc oxide thin films. These thin films were characterized by X-ray diffractometer technique. XRD analysis revealed that the ZnO:Bi thin films indicated good preferential orientation along c-axis perpendicular to the substrate. The nonlinear optical properties such as nonlinear absorption coefficient (β) and third order nonlinear susceptibility (Imχ(3)) are investigated. The calculations have been performed with a Z scan technique using Nd:YAG laser emitting 532 nm. The reverse saturable absorption (RSA) mechanism was responsible for the optical limiting effect. The results suggest that this material considered as a promising candidate for future optical device applications.

  4. Crystallization of amorphous titanium oxide thin films by pulsed UV-laser irradiation

    SciTech Connect

    Ichikawa, Yo; Adachi, Hideaki; Setsune, Kentaro; Kawashima, Syunichiro; Kugimiya, Koichi

    1996-12-31

    Oxide ceramic materials are applied to many electric devices using dielectric, ferroelectric, piezoelectric and elastic properties. Effects of ultraviolet (UV) laser irradiation on the local crystal structure have been investigated for amorphous Ti-O thin films sputtered on ST-cut quartz substrates. The irradiation was conducted with a pulsed KrF excimer laser of 248 nm in wavelength. There were few changes in the optical transmission spectra of the films before and after the irradiation. The crystal structure of the films was characterized by electron diffraction, XPS and EXAFS analyses. The results obtained from these analyses suggest the films gradually crystallize to a TiO{sub 2} crystal with the rutile type structure by the increasing of the laser pulses.

  5. Fast Responsive Gas Sensor of Vertically Aligned Fluorine-Doped Tin Oxide Nanorod Thin Film

    NASA Astrophysics Data System (ADS)

    Cho, Chan-Woo; Lee, Jong-Heun; Riu, Doh-Hyung; Kim, Chang-Yeoul

    2012-04-01

    We prepared fluorine-doped tin oxide (FTO) nanorod films and a conventional FTO thin film for the application of a semiconducting gas sensor by spray pyrolysis method. The lengths of FTO nanorods (FTON, 100 and 500 nm) were controlled by changing deposition times, and FTO thin film (FTOT) was also prepared as a reference. The gas sensitivity test shows FTON with long nanorods had higher sensitivity for both hydrogen and ethanol gases but slow response and recovery times, despite an advantage of the higher gas sensitivity. FTO nanorod film with short length about 100 nm showed relatively lower sensitivity, but fast gas response and recovery characteristics. The fast response and recovery for the analyte gases are attributed to the conductance of FTO nanorods, which is closely related to the diameter and length of nanorods.

  6. Preparation and characterization of indium tin oxide films by sol-gel method

    NASA Astrophysics Data System (ADS)

    Ciuciumis, Alina; Cernica, Ileana

    2007-05-01

    Sol-gel technology is a relatively simple and cheap process to deposit oxides under thin film form out of a sol. The experiments were developed in order to obtain nanomaterials by sol-gel method; nanomaterials that mixed with resin and additives can be deposited in thin and uniform films by spraying on different lignocellulosic composite surfaces. This method assures a functional finishing of the nanomaterials. These films are transparent and the surfaces are flat with no cracks. The influence of substrate type, morphology of the films and of the substrates before and after deposition was studied by means of optical microscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The sol-gel deposit on the lignocellulosic composite substrates lowered the sorption rates of water and water vapours.

  7. Mössbauer study of electrochemically deposited amorphous iron-sulfide-oxide thin films

    NASA Astrophysics Data System (ADS)

    Ichimura, Masaya; Kajima, Takahiro; Kawai, Shoichi; Mibu, Ko

    2016-03-01

    Iron-sulfide-oxide thin films, which are promising candidates for solar cell materials, were deposited by electrochemical deposition. As-deposited and annealed films were characterized by Mössbauer spectroscopy, X-ray diffraction (XRD), and Raman scattering at room temperature. The as-deposited film is amorphous, and the oxygen content is about 1/4 of the sulfur content (S/Fe ≈ 1.5, O/Fe ≈ 0.4). The Mössbauer spectrum for the as-deposited film is a doublet with a broad line profile having hyperfine parameters similar to those of FeS2 pyrite or marcasite. This indicates that Fe atoms are in the Fe2+ low-spin state, as in FeS2.

  8. On detection of the Fermi edge in in situ grown thin films of high- Tc oxides

    NASA Astrophysics Data System (ADS)

    Abrecht, M.; Ariosa, D.; Saleh, S. A.; Rast, S.; Margaritondo, G.; Onellion, M.; Pavuna, D.

    2001-11-01

    We discuss our systematic series of experiments on the photoelectric detection of the Fermi edge using a cylindrical mirror analyser on films of high- Tc oxides, grown in situ by pulsed laser ablation. The Fermi edge (comparable to the edge of the reference Ag) is very easily observed even in the two-phase BSCCO-2212 film that exhibits onsets of superconducting transitions, at 85 and 45 K. In contrast, the Fermi edge is weaker and more difficult to observe even in the state-of-the-art, highly epitaxial, monophase YBa 2Cu 3O 7- y (YBCO) and NdBa 2Cu 3O 7- y (NBCO-123) films (both with Tc=92 K). So far we could not detect the Fermi edge in the films of the double-`chain' YBCO-124.

  9. Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

    NASA Technical Reports Server (NTRS)

    Kusano, E.; Theil, J. A.; Thornton, John A.

    1988-01-01

    It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

  10. Anomalous infrared transmission of indium tin oxide thin films on two-dimensional nanosphere arrays.

    PubMed

    Jiang, Hang; Zhou, Yuqin; Zhou, Yurong

    2016-04-15

    The excitation of surface plasmons was studied by nano-structural indium tin oxide (ITO) films in the infrared range using nano-imprint lithography (NIL). We investigated the effect of the diameter of silica spheres, thickness of ITO film, and ordering degree of the mask plate on the transmission spectra of structural ITO films by experiments and simulations. Increasing the diameter of silica spheres makes the transmission valley blueshift, while increasing the thickness of ITO film leads the transmission valley redshift. The transmission valley corresponds to the absorption band which results from the excitation of surface plasmons. The ordering degree and the surface coverage ratios of mask plate affect the transmission feature directly. An excitation of local surface plasmons may exist on the undulated ITO surface. PMID:27082363

  11. Size-effects on the optical properties of zirconium oxide thin films

    NASA Astrophysics Data System (ADS)

    Ramana, C. V.; Vemuri, R. S.; Fernandez, I.; Campbell, A. L.

    2009-12-01

    Zirconium oxide (ZrO2) thin films with an average crystallite-size (L) ranging from 5 to 25 nm were grown by sputter deposition onto optical grade quartz substrates. The optical properties of grown ZrO2 films were evaluated using optical transmission and reflectance spectroscopic measurements. The size-effects were significant on the optical characteristics of ZrO2 films. The bandgap energy (Eg) was found to increase from 5.78 to 6.07 eV with decreasing L values from 20 to 7 nm. A direct, linear inverse L-Eg relationship found for ZrO2 films suggest that tuning optical properties for desired applications can be achieved by controlling the size.

  12. Pseudo capacitive performance of copper oxide thin films grown by RF sputtering

    SciTech Connect

    Reddy, B. Purusottam; Ganesh, K. Sivajee; Hussain, O. M.

    2015-06-24

    Thin films of Copper Oxide were prepared by radio frequency magnetron sputtering on steel substrates maintained at 250°C under different RF powers ranging from 150W to 250W by keeping the sputtering pressure at 5.7×10{sup −3} mbar and O{sub 2}:Ar ratio of 1:7. The influence of RF power on the pseudo capacitive performance of thin films was studied. The X-ray diffraction studies and Raman studies indicates that all the thin films exhibits CuO phase. The electrochemical studies was done by using three electrode configuration with platinum as reference electrode. From the cyclic voltammetry studies a high rate pseudocapacitance of 227 mFcm{sup −2} at 0.5 mVs{sup −1} and 77% of capacity retention after 1000 cycles was obtained for the CuO thin films prepared at an RF power of 220W.

  13. Effect of annealing in argon on the properties of thermally deposited gallium-oxide films

    SciTech Connect

    Kalygina, V. M. Vishnikina, V. V.; Zarubin, A. N.; Novikov, V. A.; Petrova, Yu. S.; Tolbanov, O. P.; Tyazhev, A. V.; Tcupiy, S. Y.; Yaskevich, T. M.

    2013-08-15

    The effect of the annealing temperature on the I-V, C-I, and G-V characteristics and transparency of gallium-oxide films is investigated. The films are fabricated by the thermal evaporation of Ga{sub 2}O{sub 3} powder on n-GaAs wafers. It is shown that the films which are amorphous after deposition crystallize upon annealing at temperatures T{sub an} {>=} 800 Degree-Sign C. The electrical characteristics and photoresponse of the V/Ni-GaAs-GaAs-Ga{sub x}O{sub y}-V/Ni samples to visible radiation depend on the structure and phase composition of the films.

  14. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

    DOEpatents

    Liu, D.K.

    1992-12-15

    Method and apparatus are described for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure. 7 figs.

  15. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

    DOEpatents

    Liu, David K.

    1992-01-01

    Method and apparatus for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure.

  16. Extraordinary suppression of carrier scattering in large area graphene oxide films

    SciTech Connect

    Negishi, R. Kobayashi, Y.

    2014-12-22

    In this study, we find that thermal treatment in ethanol vapor has a remarkable suppression effect of carrier scattering occurring between reduced graphene oxide (rGO) flakes in large area films. We observe excellent electrical properties such as high carrier mobility (∼5 cm{sup 2}/Vs) and low sheet resistance (∼40 KΩ/□) for the rGO films. From the electrical conductivity analysis of large area rGO films using two-dimensional variable range hopping model and structural analysis using Raman spectra measured from the rGO films, we reveal that the significant effect is caused by the expansion of conjugated π-electron system in rGO flake due to the efficient restoration of graphitic structure.

  17. Strong composite films with layered structures prepared by casting silk fibroin-graphene oxide hydrogels.

    PubMed

    Huang, Liang; Li, Chun; Yuan, Wenjing; Shi, Gaoquan

    2013-05-01

    Composite films of graphene oxide (GO) sheets and silk fibroin (SF) with layered structures have been prepared by facile solution casting of SF-GO hydrogels. The as-prepared composite film containing 15% (by weight, wt%) of SF shows a high tensile strength of 221 ± 16 MPa and a failure strain of 1.8 ± 0.4%, which partially surpass those of natural nacre. Particularly, this composite film also has a high modulus of 17.2 ± 1.9 GPa. The high mechanical properties of this composite film can be attributed to its high content of GO (85 wt%), compact layered structure and the strong hydrogen bonding interaction between SF chains and GO sheets. PMID:23538717

  18. Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

    PubMed

    Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

    2014-11-01

    The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future.

  19. Microstructural evolution of thin film vanadium oxide prepared by pulsed-direct current magnetron sputtering

    SciTech Connect

    Motyka, M. A.; Horn, M. W.; Gauntt, B. D.; Dickey, E. C.; Podraza, N. J.

    2012-11-01

    Vanadium oxide (VO{sub x}) thin films have been deposited by pulsed-DC magnetron sputtering using a metallic vanadium target in a reactive argon and oxygen environment. While the process parameters (power, total pressure, oxygen-to-argon ratio) remained constant, the deposition time was varied to produce films between 75 {+-} 6 and 2901 {+-} 30 A thick, which were then optically and electrically characterized. The complex dielectric function spectra ({epsilon} = {epsilon}{sub 1} + i{epsilon}{sub 2}) of the films from 0.75 to 5.15 eV were extracted by ex situ, multiple-angle spectroscopic ellipsometry (SE) measurements for the series of varied thickness VO{sub x} samples. Significant changes in {epsilon} and resistivity occur as a function of thickness, indicating the correlations exist between the electrical and the optical properties over this spectral range. In addition, in situ measurements via real time SE (RTSE) were made on the film grown to the largest thickness to track optical property and structural variations during growth. RTSE was also used to characterize changes in the film occurring after growth was completed, namely during post sputtering in the presence of argon and oxygen while the sample is shielded, and atmospheric exposure. RTSE indicates that the exposure of the film to the argon and oxygen environment, regardless of the shutter isolating the target, causes up to 200 A of the top surface of the deposited film to become more electrically resistive as evidenced by variations in {epsilon}. Exposure of the VO{sub x} thin film to atmospheric conditions introduces a similar change in {epsilon}, but this change occurs throughout the bulk of the film. A combination of these observations with RTSE results indicates that thinner, less ordered VO{sub x} films are more susceptible to drastic changes due to atmospheric exposure and that microstructural variations in this material ultimately control its environmental stability.

  20. Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO{sub 2} nanogranular films

    SciTech Connect

    Zhu, Li Qiang Chao, Jin Yu; Xiao, Hui

    2014-12-15

    Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO{sub 2} nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics.