Effect of protein adsorption on the corrosion behavior of 70Cu-30Ni alloy in artificial seawater.

PubMed

Torres Bautista, Blanca E; Carvalho, Maria L; Seyeux, Antoine; Zanna, Sandrine; Cristiani, Pierangela; Tribollet, Bernard; Marcus, Philippe; Frateur, Isabelle

2014-06-01

Copper alloys often used in cooling circuits of industrial plants can be affected by biocorrosion induced by biofilm formation. The objective of this work was to study the influence of protein adsorption, which is the first step in biofilm formation, on the electrochemical behavior of 70Cu-30Ni (wt.%) alloy in static artificial seawater and on the chemical composition of oxide layers. For that purpose, electrochemical measurements performed after 1h of immersion were combined to surface analyses. A model is proposed to analyze impedance data. In the presence of bovine serum albumin (BSA, model protein), the anodic charge transfer resistance deduced from EIS data at Ecorr is slightly higher, corresponding to lower corrosion current. Without BSA, two oxidized layers are shown by XPS and ToF-SIMS: an outer layer mainly composed of copper oxide (Cu2O redeposited layer) and an inner layer mainly composed of oxidized nickel, with a global thickness of ~30nm. The presence of BSA leads to a mixed oxide layer (CuO, Cu2O, Ni(OH)2) with a lower thickness (~10nm). Thus, the protein induces a decrease of the dissolution rate at Ecorr and hence a decrease of the amount of redeposited Cu2O and of the oxide layer thickness. © 2013.

High temperature oxidation of alumina forming cast austenitic stainless steels within an environment of pure steam

NASA Astrophysics Data System (ADS)

Prenzlow, Elmer A.

Steam cracking of hydrocarbons in the petrochemical industry is a multibillion dollar industry. The processes performed in these plants create byproducts that negatively affect the integrity of stainless steel piping through high temperature corrosion. Alloys used presently in industry rely on the formation of chromium oxide (chromia) as a protective layer between the bulk metal pipe and chemical byproducts. However, chromia can become susceptible to attack from aggressive species such as carbon, water vapor, and sulfur compounds, thus creating a need for a better protection method. A new series of austenitic stainless steels have been developed in recent years that, rather than forming chromia, create a protective layer of aluminum oxide (alumina) under oxidative conditions. These alloys have high nickel content for the stabilization of the austenitic phase, and a more thermodynamically stable oxide layer relative to the traditional chromia formers. Consequently, alumina forming alloys have been proposed as replacements for chromia forming alloys in the petrochemical industry. General oxidation testing has been performed on alumina forming alloys under dry and 10% water vapor conditions. However, oxidation conditions in industry resemble a 100% steam environment. Therefore, test methods to mimic such conditions are needed so that alloys can be tested and developed further for these applications. Four alloys with aluminum contents ranging from 2.6 to 3.9 wt% were cut from centrifugally cast pipes and subjected to oxidation in an environment of pure steam for up to 30 hours, at temperatures of 800 °C and 950 °C. Samples were analyzed using Raman, SEM, and EDS and showed a continuous alumina layer free of cracks. The alumina layer thickness increased with time. Additionally, larger thicknesses were observed in samples oxidized at 950 °C from those of 800 °C. Thickness measurements were used to calculate parabolic and non-parabolic oxidation rate constants. Samples were compared using calculated parabolic and modified parabolic rates of oxidation. Plots for the prediction of oxide layer thickness were generated both for the Wagner model of parabolic oxidation, and an experimentally determined modification to said model. Oxide scale thickness as formed in pure steam was shown to be related to the aluminum content of the alloy and the temperature and time of exposure. Further testing of alumina forming stainless steels in other concentrations of steam would allow for the determination of steam's effect on alumina formation kinetics. In addition, tests at additional temperatures between 800 and 950 °C would allow for the calculation of activation energies and full understanding of the oxide layer. Finally, the analysis of alumina layer thickness effects on coking performance in a petrochemical application would allow for the potential transition of these alloys into the commercial market.

Solid oxide fuel cell cathode with oxygen-reducing layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Surdoval, Wayne A.; Berry, David A.; Shultz, Travis

The disclosure provides a SOFC comprised of an electrolyte, anode, and cathode, where the cathode comprises an MIEC and an oxygen-reducing layer. The oxygen-reducing layer is in contact with the MIEC, and the MIEC is generally between and separating the oxygen-reducing layer and the electrolyte. The oxygen-reducing layer is comprised of single element oxides, single element carbonates, or mixtures thereof, and has a thickness of less than about 30 nm. In a particular embodiment, the thickness is less than 5 nm. In another embodiment, the thickness is about 3 monolayers or less. The oxygen-reducing layer may be a continuous filmmore » or a discontinuous film with various coverage ratios. The oxygen-reducing layer at the thicknesses described may be generated on the MIEC surface using means known in the art such as, for example, ALD processes.« less

Use of chemical mechanical polishing in micromachining

DOEpatents

Nasby, R.D.; Hetherington, D.L.; Sniegowski, J.J.; McWhorter, P.J.; Apblett, C.A.

1998-09-08

A process for removing topography effects during fabrication of micromachines. A sacrificial oxide layer is deposited over a level containing functional elements with etched valleys between the elements such that the sacrificial layer has sufficient thickness to fill the valleys and extend in thickness upwards to the extent that the lowest point on the upper surface of the oxide layer is at least as high as the top surface of the functional elements in the covered level. The sacrificial oxide layer is then polished down and planarized by chemical-mechanical polishing. Another layer of functional elements is then formed upon this new planarized surface. 4 figs.

Effect of oxygen plasma on nanomechanical silicon nitride resonators

NASA Astrophysics Data System (ADS)

Luhmann, Niklas; Jachimowicz, Artur; Schalko, Johannes; Sadeghi, Pedram; Sauer, Markus; Foelske-Schmitz, Annette; Schmid, Silvan

2017-08-01

Precise control of tensile stress and intrinsic damping is crucial for the optimal design of nanomechanical systems for sensor applications and quantum optomechanics in particular. In this letter, we study the influence of oxygen plasma on the tensile stress and intrinsic damping of nanomechanical silicon nitride resonators. Oxygen plasma treatments are common steps in micro and nanofabrication. We show that oxygen plasma for only a few minutes oxidizes the silicon nitride surface, creating several nanometer thick silicon dioxide layers with a compressive stress of 1.30(16) GPa. Such oxide layers can cause a reduction in the effective tensile stress of a 50 nm thick stoichiometric silicon nitride membrane by almost 50%. Additionally, intrinsic damping linearly increases with the silicon dioxide film thickness. An oxide layer of 1.5 nm grown in just 10 s in a 50 W oxygen plasma almost doubled the intrinsic damping. The oxide surface layer can be efficiently removed in buffered hydrofluoric acid.

Plasma Oxidation Of Silver And Zinc In Low-Emissivity Stacks

NASA Astrophysics Data System (ADS)

Ross, R. C.; Sherman, R.,; Bunger, R. A.; Nadel, S. J.

1987-11-01

The oxidation of silver and zinc films was studied by exposing metallic films to low-power 02 plasmas and analyzing the reacted films. This type of oxidation is an important phenomenon near the barrier layer in sputter-deposited metal-oxide/Ag/metal-oxide low-emissivity (low-e) coatings. Barrier layers generally are deposited on the Ag layer to prevent its degradation during subsequent 02 reactive sputtering. Both individual layers and complete stacks were studied. In addition, the thermal stability of plasma-oxidized Ag was examined. There are several important findings for the individual layers. Ag oxidizes rapidly in the plasma, forming Ag≍1.70 after complete reaction. Relative to the original Ag, the 9ide has -l.7 times greater thick-ness, >10 times higher electrical resistiv-ity (p), and increased surface roughness. Zn oxidizes slowly, at only -1% to 0.1% times the rate for Ag, and is thus more difficult to characterize. The results for individual layers are discussed as they relate to practical pro-perties of low-e stacks: the difficulty of obtaining complete barrier layer oxidation without partially degrading the Ag layer as well as the effects of heat treatment and aging.

Thickness optimization of the ZnO based TCO layer in a CZTSSe solar cell. Evolution of its performance with thickness when external temperature changes.

NASA Astrophysics Data System (ADS)

Chadel, Meriem; Moustafa Bouzaki, Mohammed; Chadel, Asma; Aillerie, Michel; Benyoucef, Boumediene

2017-07-01

The influence of the thickness of a Zinc Oxide (ZnO) transparent conductive oxide (TCO) layer on the performance of the CZTSSe solar cell is shown in detail. In a photovoltaic cell, the thickness of each layer largely influence the performance of the solar cell and optimization of each layer constitutes a complete work. Here, using the Solar Cell Capacitance Simulation (SCAPS) software, we present simulation results obtained in the analyze of the influence of the TCO layer thickness on the performance of a CZTSSe solar cell, starting from performance of a CZTSSe solar cell commercialized in 2014 with an initial efficiency equal to 12.6%. In simulation, the temperature was considered as a functioning parameter and the evolution of tthe performance of the cell for various thickness of the TCO layer when the external temperature changes is simulated and discussed. The best efficiency of the solar cell based in CZTSSe is obtained with a ZnO thickness equal to 50 nm and low temperature. Based on the considered marketed cell, we show a technological possible increase of the global efficiency achieving 13% by optimization of ZnO based TCO layer.

Nanoscale lamellar photoconductor hybrids and methods of making same

DOEpatents

Stupp, Samuel I; Goldberger, Josh; Sofos, Marina

2013-02-05

An article of manufacture and methods of making same. In one embodiment, the article of manufacture has a plurality of zinc oxide layers substantially in parallel, wherein each zinc oxide layer has a thickness d.sub.1, and a plurality of organic molecule layers substantially in parallel, wherein each organic molecule layer has a thickness d.sub.2 and a plurality of molecules with a functional group that is bindable to zinc ions, wherein for every pair of neighboring zinc oxide layers, one of the plurality of organic molecule layers is positioned in between the pair of neighboring zinc oxide layers to allow the functional groups of the plurality of organic molecules to bind to zinc ions in the neighboring zinc oxide layers to form a lamellar hybrid structure with a geometric periodicity d.sub.1+d.sub.2, and wherein d.sub.1 and d.sub.2 satisfy the relationship of d.sub.1.ltoreq.d.sub.2.ltoreq.3d.sub.1.

Improved performances of organic light-emitting diodes with mixed layer and metal oxide as anode buffer

NASA Astrophysics Data System (ADS)

Xue, Qin; Liu, Shouyin; Zhang, Shiming; Chen, Ping; Zhao, Yi; Liu, Shiyong

2013-01-01

We fabricated organic light-emitting devices (OLEDs) employing 2-methyl-9,10-di(2-naphthyl)-anthracene (MADN) as hole-transport material (HTM) instead of commonly used N,N'-bis-(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl-4,4'-diamine (NPB). After inserting a 0.9 nm thick molybdenum oxide (MoOx) layer at the indium tin oxide (ITO)/MADN interface and a 5 nm thick mixed layer at the organic/organic heterojunction interface, the power conversion efficiency of the device can be increased by 4-fold.

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

2012-02-01

The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods

NASA Astrophysics Data System (ADS)

Mishima, K.; Murakami, H.; Ohta, A.; Sahari, S. K.; Fujioka, T.; Higashi, S.; Miyazaki, S.

2013-03-01

Atomic layer deposition (ALD) and Layer-by-Layer deposition of Ta-oxide films on Ge(100) with using tris (tert-butoxy) (tert-butylimido) tantalum have been studied systematically. From the analysis of the chemical bonding features of the interface between TaOx and Ge(100) using x-ray photoelectron spectroscopy (XPS), Ge atom diffusion into the Ta oxide layer and resultant TaGexOy formation during deposition at temperatures higher than 200°C were confirmed. Also, we have demonstrated that nanometer-thick deposition of Tantalum oxide as an interfacial layer effectively suppresses the formation of GeOx in the HfO2 ALD on Ge. By the combination of TaOx pre-deposition on Ge(100) and subsequent ALD of HfO2, a capacitance equivalent thickness (CET) of 1.35 nm and relative dielectric constant of 23 were achieved.

Effect of water vapor on evolution of a thick Pt-layer modified oxide on the NiCoCrAl alloy at high temperature

NASA Astrophysics Data System (ADS)

Song, Peng; He, Xuan; Xiong, Xiping; Ma, Hongqing; Song, Qunling; Lü, Jianguo; Lu, Jiansheng

2018-03-01

To investigate the effect of water vapor on the novel Pt-containing oxide growth behavior, Pt-addition within the oxide layer on the surface of NiCoCrAl coating and furnace cycle tests were carried out at 1050 °C in air and air plus water vapor. The thick Pt-containing oxide layer on NiCoCrAl exhibits a different oxidation growth behavior compared to the conventional Pt-diffusion metallic coatings. The Pt-containing oxide after oxidation in air plus water vapor showed a much thicker oxide layer compare to the ones without Pt addition, and also presented a much better coating adhesion. During the oxidation process in air, Pt promotes the spinel (NiCr2O4) formation. However, the Cr2O3 formed in air with water vapor and fixed Pt within the complex oxide layer. The water vapor promoted the Ni and Co outer-diffusion, and combined with Pt to form CoPt compounds on the surface of the NiCoCrAl coating system.

Depth Measurements Using Alpha Particles and Upsettable SRAMs

NASA Technical Reports Server (NTRS)

Buehler, M. G.; Reier, M.; Soli, G. A.

1995-01-01

A custom designed SRAM was used to measure the thickness of integrated circuit over layers and the epi-layer thickness using alpha particles and a test SRAM. The over layer consists of oxide, nitride, metal, and junction regions.

Investigation of Electrical and Optical Properties of Highly Transparent TCO/Ag/TCO Multilayer.

PubMed

Kim, Sunbo; Lee, Jaehyeong; Dao, Vinh Ai; Ahn, Shihyun; Hussain, Shahzada Qamar; Park, Jinjoo; Jung, Junhee; Lee, Chan; Song, Bong-Shik; Choi, Byoungdeog; Lee, Youn-Jung; Iftiquar, S M; Yi, Junsin

2015-03-01

Transparent conductive oxides (TCOs) have been widely used as transparent electrodes for opto-electronic devices, such as solar cells, flat-panel displays, and light-emitting diodes, because of their unique characteristics of high optical transmittance and low electrical resistivity. Among various TCO materials, zinc oxide based films have recently received much attention because they have advantages over commonly used indium and tin-based oxide films. Most TCO films, however, exhibit valleys of transmittance in the wavelength range of 550-700 nm, lowering the average transmittance in the visible region and decreasing short-circuit current (Isc) of solar cells. A TCO/Ag/TCO multi-layer structure has emerged as an attractive alternative because it provides optical characteristics without the valley of transmittance compared with a 100-nm-thick single-layer TCO. In this article, we report the electrical, optical and surface properties of TCO/Ag/TCO. These multi-layers were deposited at room temperature with various Ag film thicknesses from 5 to 15 nm while the thickness of TCO thin film was fixed at 40 nm. The TCO/Ag/TCO multi-layer with a 10-nm-thick Ag film showed optimum transmittance in the visible (400-800 nm) wavelength region. These multi-layer structures have advantages over TCO layers of the same thickness.

Studies of electrochemical oxidation of Zircaloy nuclear reactor fuel cladding using time-of-flight-energy elastic recoil detection analysis

NASA Astrophysics Data System (ADS)

Whitlow, H. J.; Zhang, Y.; Wang, Y.; Winzell, T.; Simic, N.; Ahlberg, E.; Limbäck, M.; Wikmark, G.

2000-03-01

The trend towards increased fuel burn-up and higher operating temperatures in order to achieve more economic operation of nuclear power plants places demands on a better understanding of oxidative corrosion of Zircaloy (Zry) fuel rod cladding. As part of a programme to study these processes we have applied time-of-flight-energy elastic recoil detection (ToF-E ERD), electrochemical impedance measurements and scanning electron microscopy to quantitatively characterise thin-oxide films corresponding to the pre-transition oxidation regime. Oxide films of different nominal thickness in the 9-300 nm range were grown on a series of rolled Zr and Zry-2 plates by anodisation in dilute H 2SO 4 with applied voltages. The dielectric thickness of the oxide layer was determined from the electrochemical impedance measurements and the surface topography characterised by scanning electron microscopy. ToF-E ERD with a 60 MeV 127I 11+ ion beam was used to determine the oxygen content and chemical composition of the oxide layer. In the Zr samples, the oxygen content (O atom cm -2) that was determined by ERD was closely similar to the O content derived from impedance measurements from the dielectric film. The absolute agreement was well within the uncertainty associated with the stopping powers. Moreover, the measured composition of the thick oxide layers corresponded to ZrO 2 for the films thicker than 65 nm where the oxide layer was resolved in the ERD depth profile. Zry-2 samples exhibited a similar behaviour for small thickness ( ⩽130 nm) but had an enhanced O content at larger thicknesses that could be associated either with enhanced rough surface topography or porous oxide formation that was correlated with the presence of Second Phase Particles (SPP) in Zry-2. The concentration of SPP elements (Fe, Cr, Ni) in relation to Zr was the same in the outer 9×10 17 atom cm -2 of oxide as in the same thickness of metal. The results also revealed the presence of about 1 at.% 32S in the oxides on the Zr and Zry-2 samples which presumably originates from the electrolyte.

The effect of surface oxide layer on the rate of hydrogen emission from aluminum and its alloys in a high vacuum

NASA Technical Reports Server (NTRS)

Makarova, V. I.; Zyabrev, A. A.

1979-01-01

The influence of surface oxide layers on the kinetics of hydrogen emission at the high vacuum of 10 to the minus 8th power torr was investigated at temperatures from 20 to 450 C using samples of pure AB00 aluminum and the cast alloy AMg. Cast and deformed samples of AMts alloy were used to study the effect of oxide film thickness on the rate of hydrogen emission. Thermodynamic calculations of the reactions of the generation and dissociation of aluminum oxide show that degasification at elevated temperatures (up to 600 C) and high vacuum will not reduce the thickness of artificially-generated surface oxide layers on aluminum and its alloys.

Impact of fluorine based reactive chemistry on structure and properties of high moment magnetic material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Xiaoyu, E-mail: xiaoyu.yang@wdc.com; Chen, Lifan; Han, Hongmei

The impact of the fluorine-based reactive ion etch (RIE) process on the structural, electrical, and magnetic properties of NiFe and CoNiFe-plated materials was investigated. Several techniques, including X-ray fluorescence, 4-point-probe, BH looper, transmission electron microscopy (TEM), and electron energy loss spectroscopy (EELS), were utilized to characterize both bulk film properties such as thickness, average composition, Rs, ρ, Bs, Ms, and surface magnetic “dead” layers' properties such as thickness and element concentration. Experimental data showed that the majority of Rs and Bs changes of these bulk films were due to thickness reduction during exposure to the RIE process. ρ and Msmore » change after taking thickness reduction into account were negligible. The composition of the bulk films, which were not sensitive to surface magnetic dead layers with nano-meter scale, showed minimum change as well. It was found by TEM and EELS analysis that although both before and after RIE there were magnetic dead layers on the top surface of these materials, the thickness and element concentration of the layers were quite different. Prior to RIE, dead layer was actually native oxidation layers (about 2 nm thick), while after RIE dead layer consisted of two sub-layers that were about 6 nm thick in total. Sub-layer on the top was native oxidation layer, while the bottom layer was RIE “damaged” layer with very high fluorine concentration. Two in-situ RIE approaches were also proposed and tested to remove such damaged sub-layers.« less

Effects of a capping oxide layer on polycrystalline-silicon thin-film transistors fabricated by continuous-wave laser crystallization

NASA Astrophysics Data System (ADS)

Li, Yi-Shao; Wu, Chun-Yi; Chou, Chia-Hsin; Liao, Chan-Yu; Chuang, Kai-Chi; Luo, Jun-Dao; Li, Wei-Shuo; Cheng, Huang-Chung

2018-06-01

A tetraethyl-orthosilicate (TEOS) capping oxide was deposited by low-pressure chemical vapor deposition (LPCVD) on a 200-nm-thick amorphous Si (a-Si) film as a heat reservoir to improve the crystallinity and surface roughness of polycrystalline silicon (poly-Si) formed by continuous-wave laser crystallization (CLC). The effects of four thicknesses of the capping oxide layer to satisfy an antireflection condition, namely, 90, 270, 450, and 630 nm, were investigated. The largest poly-Si grain size of 2.5 × 20 µm2 could be achieved using a capping oxide layer with an optimal thickness of 450 nm. Moreover, poly-Si nanorod (NR) thin-film transistors (TFTs) fabricated using the aforementioned technique exhibited a superior electron field-effect mobility of 1093.3 cm2 V‑1 s‑1 and an on/off current ratio of 2.53 × 109.

Method of Fabricating Schottky Barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1982-01-01

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

Highly scaled equivalent oxide thickness of 0.66 nm for TiN/HfO2/GaSb MOS capacitors by using plasma-enhanced atomic layer deposition

NASA Astrophysics Data System (ADS)

Tsai, Ming-Li; Wang, Shin-Yuan; Chien, Chao-Hsin

2017-08-01

Through in situ hydrogen plasma treatment (HPT) and plasma-enhanced atomic-layer-deposited TiN (PEALD-TiN) layer capping, we successfully fabricated TiN/HfO2/GaSb metal-oxide-semiconductor capacitors with an ultrathin equivalent oxide thickness of 0.66 nm and a low density of states of approximately 2 × 1012 cm-2 eV-1 near the valence band edge. After in situ HPT, a native oxide-free surface was obtained through efficient etching. Moreover, the use of the in situ PEALD-TiN layer precluded high-κ dielectric damage that would have been caused by conventional sputtering, thereby yielding a superior high-κ dielectric and low gate leakage current.

Photoconductivity of Macroporous and Nonporous Silicon with Ultrathin Oxide Layers

NASA Astrophysics Data System (ADS)

Konin, K. P.; Goltvyansky, Yu. V.; Karachevtseva, L. A.; Karas, M. I.; Morozovs'ka, D. V.

2018-06-01

The photoconductivity of macroporous silicon with ultrathin oxide layers of 2.7-30 nm in thickness at short-wave optical excitation was studied. The following feature was revealed: a nonmonotonic change in the photoconductivity as a function of the oxide thickness. At a minimum thickness, the photoconductivity is negative; in the interval 6.8-15 nm, it is very much suppressed; at 15-30 nm, it is positive. Suppression of photoconductivity over a wide thickness range indicates an abnormally high concentration of traps and capture centers for charge carriers of both signs. Such a change in the photoconductivity corresponds to the known results on the continuous morphological rearrangement of the oxide in the thickness range from 6-7 nm to 12-15 nm from the coesite-like (4-membered SiO4 tetrahedra rings) to the tridymite-like (6-membered SiO4 tetrahedra rings). The suppression of photoconductivity in the intermediate range probably demonstrates the collective, antisynergetic action of these coexisting oxide forms on the nonequilibrium charge carriers. These coexisting oxide forms manifest themselves as an unusual collective defect.

Effects of anodic oxidation parameters on a modified titanium surface.

PubMed

Park, Il Song; Lee, Min Ho; Bae, Tae Sung; Seol, Kyeong Won

2008-02-01

Anodic oxidation is an electrochemical treatment that can be used to control the thickness of an oxide layer formed on a titanium surface. This procedure has the advantage of allowing the ions contained in an electrolyte to deposit onto the oxide layer. The characteristics of a layer treated with anodic oxidation can vary according to the type and concentration of the electrolytes as well as the processing variables used during anodic oxidation. In this study, the constant electrolyte for anodic oxidation was a mixed solution containing 0.02 M DL-alpha-glycerophosphate disodium salt and 0.2M calcium acetate. Anodic oxidation was carried out at different voltages, current densities, and duration of anodic oxidation. The results showed that the current density and variation in the duration of anodic oxidation did not have a large effect on the change in the characteristics of the layer. On the other hand, the size of the micropores was increased with increasing voltage of anodic oxidation, and anatase and rutile phases were found to co-exist in the porous titanium dioxide layer. In addition, the thickness of the oxide layer on titanium and the characteristic of corrosion resistance increased with increasing voltage. The MTT test showed that the cell viability was increased considerably as a result of anodic oxidation. The anodizing voltage is an important parameter that determines the characteristics of the anodic oxide layer of titanium. (c) 2007 Wiley Periodicals, Inc.

Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

PubMed

Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

2015-10-13

Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance.

Substrate Oxide Layer Thickness Optimization for a Dual-Width Plasmonic Grating for Surface-Enhanced Raman Spectroscopy (SERS) Biosensor Applications

PubMed Central

Bauman, Stephen J.; Brawley, Zachary T.; Darweesh, Ahmad A.; Herzog, Joseph B.

2017-01-01

This work investigates a new design for a plasmonic SERS biosensor via computational electromagnetic models. It utilizes a dual-width plasmonic grating design, which has two different metallic widths per grating period. These types of plasmonic gratings have shown larger optical enhancement than standard single-width gratings. The new structures have additional increased enhancement when the spacing between the metal decreases to sub-10 nm dimensions. This work integrates an oxide layer to improve the enhancement even further by carefully studying the effects of the substrate oxide thickness on the enhancement and reports ideal substrate parameters. The combined effects of varying the substrate and the grating geometry are studied to fully optimize the device’s enhancement for SERS biosensing and other plasmonic applications. The work reports the ideal widths and substrate thickness for both a standard and a dual-width plasmonic grating SERS biosensor. The ideal geometry, comprising a dual-width grating structure atop an optimal SiO2 layer thickness, improves the enhancement by 800%, as compared to non-optimized structures with a single-width grating and a non-optimal oxide thickness. PMID:28665308

Transmission electron microscopy characterization of the interfacial structure of a galvanized dual-phase steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aslam, I., E-mail: ia31@msstate.edu

2016-10-15

Site-specific studies were carried out to characterize the interface of a galvanized dual-phase (DP) steel. Focused ion beam (FIB) was used to prepare specimens in the interface region (~ 100 nm thick) between the coating and the substrate. Transmission electron microscopy (TEM), scanning TEM (STEM), and high resolution TEM (HRTEM) were performed to resolve the phases and the structures at the interface between the zinc (Zn) coating and the steel substrate. The STEM and TEM results showed that a continuous manganese oxide (MnO) film with a thickness of ~ 20 nm was present on the surface of the substrate whilemore » no silicon (Si) oxides were resolved. Internal oxide particles were observed as well in the sub-surface region. Despite the presence of the continuous oxide film, a well-developed inhibition layer was observed right on top of the oxide film. The inhibition layer has a thickness of ~ 100 nm. Possible mechanisms for the growth of the inhibition layer were discussed. - Highlights: •Site-specific examinations were performed on the Zn/steel interface. •Continuous external MnO oxides (20 nm) were observed at the interface. •No Si oxides were observed at the interface. •Internal oxide particles were distributed in the subsurface. •A continuous inhibition layer grew on top of the external oxides.« less

Influences of urea and sodium nitrite on surface coating of plasma electrolytic oxidation

NASA Astrophysics Data System (ADS)

Yeh, Shang-Chun; Tsai, Dah-Shyang; Guan, Sheng-Yong; Chou, Chen-Chia

2015-11-01

Urea and sodium nitrite are generally viewed as nitridation additives in the electrolyte for plasma electrolytic oxidation (PEO) of aluminum alloys. We study the influences of these two convenient chemicals in presence of sodium aluminate and find very different effects on film growth. Urea addition enhances the nitrogen content of PEO layer, diminishes the layer thickness, increases the porosity, interferes with the α-alumina formation, and promotes precipitation in the electrolyte. Hence, the electrolytic urea content ought to be maintained less than 45 g dm-3. On the other hand, sodium nitrite behaves like an oxidation additive, more than a nitridation additive. NaNO2 addition effectively introduces nitrogen in the PEO layer at low concentration, yet the nitrogen content of oxide layer decreases with increasing NaNO2 concentration. The effects of NaNO2, such as increasing layer thickness, reducing porosity, promoting α-alumina formation are attributed to oxidation enhancement, not because of nitridation.

High Temperature Superconducting Thick Films

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Holesinger, Terry G.; Jia, Quanxi

2005-08-23

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

Reflection/suppression coatings for 900 - 1200 A radiation

NASA Technical Reports Server (NTRS)

Edelstein, Jerry

1989-01-01

The design and performance of multiple-layer, selective-reflection, selective-suppression coatings for the 900 - 1200 A band are described. These coatings are designed to optimize both high reflectivity at a desirable wavelength and low reflectivity at an undesirable wavelength. The minimum structure for a selective coating consists of a thin metal or metal oxide layer (50 - 150 A thickness) over an aluminum substrate protected with a semi-transparent dielectric (100 - 1000 A thickness). Predicted coating performance is strongly effected by varying the layer combination and thickness. A graphical method of optimizing the coating layer structure is developed. Aluminum, silicon, their oxides, and gold have been investigated as coating layer materials. A very simple coating with a 1026 to 1216 A reflectivity ratio greater than 100 was fabricated. Such reflection/suppression coatings may be of great utility to spaceborne EUV spectrographs.

Native oxide formation on pentagonal copper nanowires: A TEM study

NASA Astrophysics Data System (ADS)

Hajimammadov, Rashad; Mohl, Melinda; Kordas, Krisztian

2018-06-01

Hydrothermally synthesized copper nanowires were allowed to oxidize in air at room temperature and 30% constant humidity for the period of 22 days. The growth of native oxide layer was followed up by high-resolution transmission electron microscopy and diffraction to reveal and understand the kinetics of the oxidation process. Copper oxides appear in the form of differently oriented crystalline phases around the metallic core as a shell-like layer (Cu2O) and as nanoscopic islands (CuO) on the top of that. Time dependent oxide thickness data suggests that oxidation follows the field-assisted growth model at the beginning of the process, as practically immediately an oxide layer of ∼2.8 nm thickness develops on the surface. However, after this initial rapid growth, the local field attenuates and the classical parabolic diffusion limited growth plays the main role in the oxidation. Because of the single crystal facets on the side surface of penta-twinned Cu nanowires, the oxidation rate in the diffusion limited regime is lower than in polycrystalline films.

Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

PubMed

Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

2014-12-01

The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions.

Process for growing a film epitaxially upon an oxide surface and structures formed with the process

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1998-01-01

A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Process for growing a film epitaxially upon an oxide surface and structures formed with the process

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

1995-01-01

A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Three-dimensional atom probe tomography of oxide, anion, and alkanethiolate coatings on gold.

PubMed

Zhang, Yi; Hillier, Andrew C

2010-07-15

We have used three-dimensional atom probe tomography to analyze several nanometer-thick and monomolecular films on gold surfaces. High-purity gold wire was etched by electropolishing to create a sharp tip suitable for field evaporation with a radius of curvature of <100 nm. The near-surface region of a freshly etched gold tip was examined with the atom probe at subnanometer spatial resolution and with atom-level composition accuracy. A thin contaminant layer, primarily consisting of water and atmospheric gases, was observed on a fresh tip. This sample exhibited crystalline lattice spacings consistent with the interlayer spacing of {200} lattice planes of bulk gold. A thin oxide layer was created on the gold surface via plasma oxidation, and the thickness and composition of this layer was measured. Clear evidence of a nanometer-thick oxide layer was seen coating the gold tip, and the atomic composition of the oxide layer was consistent with the expected stoichiometry for gold oxide. Monomolecular anions layers of Br(-) and I(-) were created via adsorption from aqueous solutions onto the gold. Atom probe data verified the presence of the monomolecular anion layers on the gold surface, with ion density values consistent with literature values. A hexanethiolate monolayer was coated onto the gold tip, and atom probe analysis revealed a thin film whose ion fragments were consistent with the molecular composition of the monolayer and a surface coverage similar to that expected from literature. Details of the various coating compositions and structures are presented, along with discussion of the reconstruction issues associated with properly analyzing these thin-film systems.

Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors

NASA Astrophysics Data System (ADS)

Gao, Xu; Lin, Meng-Fang; Mao, Bao-Hua; Shimizu, Maki; Mitoma, Nobuhiko; Kizu, Takio; Ou-Yang, Wei; Nabatame, Toshihide; Liu, Zhi; Tsukagoshi, Kazuhito; Wang, Sui-Dong

2017-01-01

Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O2/air. The device with a thick IGZO layer shows similar electron mobility in O2/air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O2/air due to the electron transfer to adsorbed gas molecules. The O2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results.

Non-destructive evaluation of nano-sized structure of thin film devices by using small angle neutron scattering.

PubMed

Shin, E J; Seong, B S; Choi, Y; Lee, J K

2011-01-01

Nano-sized multi-layers copper-doped SrZrO3, platinum (Pt) and silicon oxide (SiO2) on silicon substrates were prepared by dense plasma focus (DPF) device with the high purity copper anode tip and analyzed by using small angle neutron scattering (SANS) to establish a reliable method for the non-destructive evaluation of the under-layer structure. Thin film was well formed at the time-to-dip of 5 microsec with stable plasma of DPF. Several smooth intensity peaks were periodically observed when neutron beam penetrates the thin film with multi-layers perpendicularly. The platinum layer is dominant to intensity peaks, where the copper-doped SrZnO3 layer next to the platinum layer causes peak broadening. The silicon oxide layer has less effect on the SANS spectra due to its relative thick thickness. The SANS spectra shows thicknesses of platinum and copper-doped SrZnO3 layers as 53 and 25 nm, respectively, which are well agreement with microstructure observation.

Impedance spectroscopy and microstructural characterization of the corrosion behavior of FeCrAl alloy in lead-bismuth eutectic

NASA Astrophysics Data System (ADS)

Chen, Xiang; Haasch, Rick; Stubbins, James F.

2012-12-01

The corrosion behavior of FeCrAl alloy in Lead-Bismuth Eutectic (LBE) saturated with oxygen at 550 °C was investigated. Impedance Spectroscopy (IS) measurement was made continuously on one specimen during the entire LBE exposure test to characterize the corrosion kinetics. Various microanalysis techniques, including SEM, EDS, XRD, AES, and XPS were used to analyze the corrosion products of post-exposure specimens. It was found that a very thin, adherent alumina oxide layer formed on the specimen surface and was able to protect the alloy from the corrosion attack in LBE. The thickness of the alumina surface layer increased very slowly with time reaching about 837 nm in average thickness after exposure for 3600-h in LBE. The IS measurements match the microanalysis results in three respects: first, a non-zero impedance measurement agrees with the existence of a continuous surface oxide layer; second, a general increase of the impedance was observed during the real-time IS measurement which means that the IS measurements reflect the growth rate of the oxide layer; and third, the oxide film thickness derived from the IS data compares favorably with the SEM film thickness measurements which establishes the validity of using IS to monitor the real-time corrosion kinetics of alloys in LBE.

Fabrication technology of CNT-Nickel Oxide based planar pseudocapacitor for MEMS and NEMS

NASA Astrophysics Data System (ADS)

Lebedev, E. A.; Kitsyuk, E. P.; Gavrilin, I. M.; Gromov, D. G.; Gruzdev, N. E.; Gavrilov, S. A.; Dronov, A. A.; Pavlov, A. A.

2015-11-01

Fabrication technology of planar pseudocapacitor (PsC) based on carbon nanotube (CNT) forest, synthesized using plasma enhanced chemical vapor deposition (PECVD) method, covered with thin nickel oxide layer deposited by successive ionic layer adsorption and reaction (SILAR) method, is demonstrated. Dependences of deposited oxide layers thickness on device specific capacities is studied. It is shown that pseudocapacity of nickel oxide thin layer increases specific capacity of the CNT's based device up to 2.5 times.

Fundamental Studies and Device Development in Beta Silicon Carbide

DTIC Science & Technology

1990-02-28

8217 and (d) 14.5- off (000 1) tovwird 111201 axis, respectively. 25p atoms are considered to exist in monoatomic form. The overall reaction fort the...IOOOA thick oxide layer was thermally grown in a dry oxygen ambient at 1200°C. The oxide layer was etched and a layer of gold , 񓟰A in thickness, was...and gold etching in a KI:12:H20 solution, 4:1:40 by weight. The diodes were separated from the field region by a 100 pm wide annular ring. The

Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

NASA Astrophysics Data System (ADS)

Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

2018-02-01

To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

Secondary electron emission influenced by oxidation on the aluminum surface: the roles of the chemisorbed oxygen and the oxide layer

NASA Astrophysics Data System (ADS)

Li, Jiangtao; Hoekstra, Bart; Wang, Zhen-Bin; Qiu, Jie; Pu, Yi-Kang

2018-04-01

A relationship between the apparent secondary electron yield ({γ }{{se}}) and the oxygen coverage/oxide layer thickness on an aluminum cathode is obtained in an experiment under a controlled environment. The apparent secondary electron yield ({γ }{{se}}) is deduced from the breakdown voltage between two parallel plate electrodes in a 360 mTorr argon environment using a simple Townsend breakdown model with the assumption that the variation of the apparent secondary electron yield is dominated by the variation of the argon ion induced processes. The oxygen coverage/oxide layer thickness on the aluminum cathode is measured by a semi in situ x-ray photoemission spectroscopy equipment which is directly attached to the discharge chamber. It is found that three phases exist: (1) in the monomonolayer regime, as the oxygen coverage increases from 0 to 0.3, {γ }{{se}} decreases by nearly 40 % , (2) as the oxygen coverage increases from 0.3 to 1, {γ }{{se}} keeps nearly constant, (3) as the oxide layer thickness increases from about 0.3 nm to about 1.1 nm, {γ }{{se}} increases by 150 % . We propose that, in the submonolayer regime, the chemisorbed oxygen on the aluminum surface causes the decrease of {γ }{{se}} by creating a local potential barrier, which reduces the Auger neutralization rate and the energy gained by the Auger electrons. In the multilayer regime, as the oxide layer grows in thickness, there are three proposed mechanisms which cause the increase of {γ }{{se}}: (1) the work function decreases; (2) resonance neutralization and Auger de-excitation may exist. This is served as another channel for secondary electron production; (3) the kinetic energy of Auger electrons is increased on average, leading to a higher probability for electrons to overcome the surface potential barrier.

Serially connected solid oxide fuel cells having monolithic cores

DOEpatents

Herceg, Joseph E.

1987-01-01

A solid oxide fuel cell for electrochemically combining fuel and oxidant for generating galvanic output, wherein the cell core has an array of cell segments electrically serially connected in the flow direction, each segment consisting of electrolyte walls and interconnect that are substantially devoid of any composite inert materials for support. Instead, the core is monolithic, where each electrolyte wall consists of thin layers of cathode and anode materials sandwiching a thin layer of electrolyte material therebetween. Means direct the fuel to the anode-exposed core passageways and means direct the oxidant to the cathode-exposed core passageways; and means also direct the galvanic output to an exterior circuit. Each layer of the electrolyte composite materials is of the order of 0.002-0.01 cm thick; and each layer of the cathode and anode materials is of the order of 0.002-0.05 cm thick. Between 2 and 50 cell segments may be connected in series.

Microstructural Study on Oxidation Resistance of Nonmodified and Platinum Modified Aluminide Coating

NASA Astrophysics Data System (ADS)

Zagula-Yavorska, Maryana; Sieniawski, Jan

2014-03-01

Platinum electroplating layers (3 and 7 μm thick) were deposited on the surface of the Inconel 713 LC, CMSX 4, and Inconel 625 Ni-base superalloys. Diffusion treatment at 1050°C for 2 h under argon atmosphere was performed after electroplating. Diffusion treated samples were aluminized according to the low activity CVD process at 1050°C for 8 h. The nonmodified aluminide coatings consist of NiAl phase. Platinum modification let to obtain the (Ni,Pt)Al phase in coatings. The coated samples were subjected to cyclic oxidation testing at 1100°C. It was discovered that increase of the platinum electroplating thickness from 3 to 7 μm provides the improvement of oxidation resistance of aluminide coatings. Increase of the platinum thickness causes decreases in weight change and decreases in parabolic constant during oxidation. The platinum provides the pure Al2O3 oxide formation, slow growth oxide layer, and delay the oxide spalling during heating-cooling thermal cycles.

Selective oxidation of cube textured Ni and Ni-Cr substrate for the formation of cube textured NiO as a component buffer layer for REBa 2Cu 3O 7+ x (REBCO) coated conductors

NASA Astrophysics Data System (ADS)

Lockman, Z.; Goldacker, W.; Nast, R.; deBoer, B.; MacManus-Driscoll, J. L.

2002-08-01

Thermal oxidation of cube textured, pure Ni and Ni-Cr tapes was undertaken under different oxidation conditions to form cube textured NiO for the use as a first component of buffer layer for the coated conductor. Cube textured NiO was formed on pure Ni after oxidising for more than 130 min in O 2 at 1250 °C. The oxide thickness was >30 μm. Much shorter oxidation times (20-40 min, NiO thickness of ∼5 μm) and lower temperature (1050 °C) were required to form a similar texture on Ni-Cr foils. In addition, NiO formed on Ni-13%Cr was more highly textured than Ni-10%Cr. A Cr 2O 3 inner layer and NiO outer layer was formed on the Ni-Cr alloys.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory.

PubMed

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In 2 Ga 2 ZnO 7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO 2 (blocking oxide)/p ++ -Si (control gate) substrate, where 3 nm thick atomic layer deposited Al 2 O 3 (tunneling oxide) and 5 nm thick low-pressure CVD Si 3 N 4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F ) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory

NASA Astrophysics Data System (ADS)

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In2Ga2ZnO7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO2 (blocking oxide)/p++-Si (control gate) substrate, where 3 nm thick atomic layer deposited Al2O3 (tunneling oxide) and 5 nm thick low-pressure CVD Si3N4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

NASA Astrophysics Data System (ADS)

Kim, Kyoung H.; Gordon, Roy G.; Ritenour, Andrew; Antoniadis, Dimitri A.

2007-05-01

Atomic layer deposition (ALD) was used to deposit passivating interfacial nitride layers between Ge and high-κ oxides. High-κ oxides on Ge surfaces passivated by ultrathin (1-2nm) ALD Hf3N4 or AlN layers exhibited well-behaved C-V characteristics with an equivalent oxide thickness as low as 0.8nm, no significant flatband voltage shifts, and midgap density of interface states values of 2×1012cm-1eV-1. Functional n-channel and p-channel Ge field effect transistors with nitride interlayer/high-κ oxide/metal gate stacks are demonstrated.

Layered assembly of graphene oxide and Co-Al layered double hydroxide nanosheets as electrode materials for supercapacitors.

PubMed

Wang, Lei; Wang, Dong; Dong, Xin Yi; Zhang, Zhi Jun; Pei, Xian Feng; Chen, Xin Jiang; Chen, Biao; Jin, Jian

2011-03-28

An innovative strategy of fabricating electrode material by layered assembling two kinds of one-atom-thick sheets, carboxylated graphene oxide (GO) and Co-Al layered double hydroxide nanosheet (Co-Al LDH-NS) for the application as a pseudocapacitor is reported. The Co-Al LDH-NS/GO composite exhibits good energy storage properties.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moddeman, W.E.; Foose, D.S.; Bowling, W.C.

Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) were used to characterize the surface chemistry of three BORAZON* materials: Type I, 510, and 550. Samples were examined in the ``as-received`` condition and following heat treatments in air. Boron oxides were found on the Type I and 550 BORAZON crystals; oxide thicknesses were estimated to be 15A. The titanium-coated product, 510, was found to have a discontinuous titanium coating with a TiO{sub 2} layer that was approximately 20A thick. Following heat treatment at 800{degrees}C for 1 hr in air, the boron oxide layer on the Type I crystals was foundmore » to increase in thickness to approximately 30A. The same heat treatment on the 510 crystals yielded a multi-layered structure consisting of an enriched outer layer of B{sub 2}O{sub 3} over a predominantly TiO{sub 2} one. The entire initial titanium coating was oxidized, and segregated patches of B{sub 2}O{sub 3} (``islands``) were observed. The segregated patches can be explained in terms of the coalescence of liquid B{sub 2}O{sub 3} (melting point = 450{degrees}C). The 550 crystals were oxidized at 500{degrees}C. The oxide formed at this temperature was B{sub x}O (x > 0.67). These results were interpreted in terms of their potential use in sealing BORAZON to glass in vitreous bonding.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moddeman, W.E.; Foose, D.S.; Bowling, W.C.

Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) were used to characterize the surface chemistry of three BORAZON* materials: Type I, 510, and 550. Samples were examined in the as-received'' condition and following heat treatments in air. Boron oxides were found on the Type I and 550 BORAZON crystals; oxide thicknesses were estimated to be 15A. The titanium-coated product, 510, was found to have a discontinuous titanium coating with a TiO{sub 2} layer that was approximately 20A thick. Following heat treatment at 800{degrees}C for 1 hr in air, the boron oxide layer on the Type I crystals was foundmore » to increase in thickness to approximately 30A. The same heat treatment on the 510 crystals yielded a multi-layered structure consisting of an enriched outer layer of B{sub 2}O{sub 3} over a predominantly TiO{sub 2} one. The entire initial titanium coating was oxidized, and segregated patches of B{sub 2}O{sub 3} ( islands'') were observed. The segregated patches can be explained in terms of the coalescence of liquid B{sub 2}O{sub 3} (melting point = 450{degrees}C). The 550 crystals were oxidized at 500{degrees}C. The oxide formed at this temperature was B{sub x}O (x > 0.67). These results were interpreted in terms of their potential use in sealing BORAZON to glass in vitreous bonding.« less

Evaluation of oxide-coated iridium-rhenium chambers

NASA Astrophysics Data System (ADS)

Reed, Brian D.

1994-03-01

Iridium-coated rhenium (Ir-Re) provides long life operation of radiation-cooled rockets at temperatures up to 2200 C. Ceramic oxide coatings could be used to increase Ir-Re rocket lifetimes and allow operation in highly oxidizing environments. Ceramic oxide coatings promise to serve as both thermal and diffusion barriers for the iridium layer. Seven ceramic oxide-coated Ir-Re, 22-N rocket chambers were tested with gaseous hydrogen/gaseous oxygen (GHz/G02) propellants. Five chambers had thick (over 10 mils), monolithic coatings of either hafnia (HfO2) or zirconia (ZrO2). Two chambers had coatings with thicknesses less than 5 mils. One of these chambers had a thin-walled coating of ZrO2 infiltrated with sol gel HfO2. The other chamber had a coating composed of an Ir-oxide composite. The purpose of this test program was to assess the ability of the oxide coatings to withstand the thermal shock of combustion initiation, adhere under repeated thermal cycling, and operate in aggressively oxidizing environments. All of the coatings survived the thermal shock of combustion and demonstrated operation at mixture ratios up to 11. Testing the Ir-oxide composite-coated chamber included over 29 min at mixture ratio 16. The thicker walled coatings provided the larger temperature drops across the oxide layer (up to 570 C), but were susceptible to macrocracking and eventual chipping at a stress concentrator. The cracks apparently resealed during firing, under compression of the oxide layer. The thinner walled coatings did not experience the macrocracking and chipping of the chambers that was seen with the thick, monolithic coatings. However, burn-throughs in the throat region did occur in both of the thin-walled chambers at mixture ratios well above stoichiometric. The burn-throughs were probably the result of oxygen diffusion through the oxide coating that allowed the underlying Ir and Re layers to be oxidized. The results of this test program indicated that the thin-walled oxide coatings are better suited for repeated thermal cycling than the thick-walled coating, while thicker coatings may be required for operation in aggressively oxidizing environments.

Evaluation of oxide-coated iridium-rhenium chambers

NASA Technical Reports Server (NTRS)

Reed, Brian D.

1994-01-01

Iridium-coated rhenium (Ir-Re) provides long life operation of radiation-cooled rockets at temperatures up to 2200 C. Ceramic oxide coatings could be used to increase Ir-Re rocket lifetimes and allow operation in highly oxidizing environments. Ceramic oxide coatings promise to serve as both thermal and diffusion barriers for the iridium layer. Seven ceramic oxide-coated Ir-Re, 22-N rocket chambers were tested with gaseous hydrogen/gaseous oxygen (GHz/G02) propellants. Five chambers had thick (over 10 mils), monolithic coatings of either hafnia (HfO2) or zirconia (ZrO2). Two chambers had coatings with thicknesses less than 5 mils. One of these chambers had a thin-walled coating of ZrO2 infiltrated with sol gel HfO2. The other chamber had a coating composed of an Ir-oxide composite. The purpose of this test program was to assess the ability of the oxide coatings to withstand the thermal shock of combustion initiation, adhere under repeated thermal cycling, and operate in aggressively oxidizing environments. All of the coatings survived the thermal shock of combustion and demonstrated operation at mixture ratios up to 11. Testing the Ir-oxide composite-coated chamber included over 29 min at mixture ratio 16. The thicker walled coatings provided the larger temperature drops across the oxide layer (up to 570 C), but were susceptible to macrocracking and eventual chipping at a stress concentrator. The cracks apparently resealed during firing, under compression of the oxide layer. The thinner walled coatings did not experience the macrocracking and chipping of the chambers that was seen with the thick, monolithic coatings. However, burn-throughs in the throat region did occur in both of the thin-walled chambers at mixture ratios well above stoichiometric. The burn-throughs were probably the result of oxygen diffusion through the oxide coating that allowed the underlying Ir and Re layers to be oxidized. The results of this test program indicated that the thin-walled oxide coatings are better suited for repeated thermal cycling than the thick-walled coating, while thicker coatings may be required for operation in aggressively oxidizing environments.

Testing and evaluation of oxide-coated iridium/rhenium chambers

NASA Technical Reports Server (NTRS)

Reed, Brian D.

1993-01-01

Iridium-coated rhenium provides long life operation of radiation-cooled rockets at temperatures up to 2200 C. Ceramic oxide coatings could be used to increase iridium/rhenium rocket lifetimes and allow operation in highly oxidizing environments. Ceramic oxide coatings promise to serve as both thermal and diffusion barriers for the iridium layer. Seven ceramic oxide-coated iridium/rhenium, 22 N rocket chambers were tested on gaseous hydrogen/gaseous oxygen propellants. Five chambers had thick (over 10 mils), monolithic coatings of either hafnia or zirconia. Two chambers had coatings with thicknesses less than 5 mils. One of these chambers had a thin-walled coating of zirconia infiltrated with sol gel hafnia. The other chamber had a coating composed of an iridium/oxide composite. The purpose of this test program was to assess the ability of the oxide coatings to withstand the thermal shock of combustion initiation, adhere under repeated thermal cycling, and operate in aggressively oxidizing environments. All of the coatings survived the thermal shock of combustion and demonstrated operation at mixture ratios up to 11. The iridium/oxide composite coated chamber included testing for over 29 minutes at mixture ratio 16. The thicker-walled coatings provided the larger temperature drops across the oxide layer (up to 570 C), but were susceptible to macrocracking and eventual chipping at a stress concentrator. The cracks apparently resealed during firing, under compression of the oxide layer. The thinner-walled coatings did not experience the macrocracking and chipping of the chambers seen with the thick, monolithic coatings. However, burnthroughs in the throat region did occur in both of the thin-walled chambers at mixture ratios well above stochiometric. The burn-throughs were probably the result of oxygen-diffusion through the oxide coating that allowed the underlying iridium and rhenium layers to be oxidized. The results of this test program indicated that the thin-walled oxide coatings are better suited for repeated thermal cycling than the thick-walled coating, while thicker coatings may be required for operation in aggressively oxidizing environments.

Characterization of crystal structure features of a SIMOX substrate

NASA Astrophysics Data System (ADS)

Eidelman, K. B.; Shcherbachev, K. D.; Tabachkova, N. Yu.; Podgornii, D. A.; Mordkovich, V. N.

2015-12-01

The SIMOX commercial sample (Ibis corp.) was investigated by a high-resolution X-ray diffraction (HRXRD), a high-resolution transmission electron microscopy (HRTEM) and an Auger electron spectroscopy (AES) to determine its actual parameters (the thickness of the top Si and a continuous buried oxide layer (BOX), the crystalline quality of the top Si layer). Under used implantation conditions, the thickness of the top Si and BOX layers was 200 nm and 400 nm correspondingly. XRD intensity distribution near Si(0 0 4) reciprocal lattice point was investigated. According to the oscillation period of the diffraction reflection curve defined thickness of the overtop silicon layer (220 ± 2) nm. HRTEM determined the thickness of the oxide layer (360 nm) and revealed the presence of Si islands with a thickness of 30-40 nm and a length from 30 to 100 nm in the BOX layer nearby "BOX-Si substrate" interface. The Si islands are faceted by (1 1 1) and (0 0 1) faces. No defects were revealed in these islands. The signal from Si, which corresponds to the particles in an amorphous BOX matrix, was revealed by AES in the depth profiles. Amount of Si single crystal phase at the depth, where the particles are deposited, is about 10-20%.

Surface treatments for aluminium alloys

NASA Astrophysics Data System (ADS)

Ardelean, M.; Lascău, S.; Ardelean, E.; Josan, A.

2018-01-01

Typically, in contact with the atmosphere, the aluminium surface is covered with an aluminium oxide layer, with a thickness of less than 1-2μm. Due to its low thickness, high porosity and low mechanical strength, this layer does not protect the metal from corrosion. Anodizing for protective and decorative purposes is the most common method of superficial oxidation processes and is carried out through anodic oxidation. The oxide films, resulted from anodizing, are porous, have a thickness of 20-50μm, and are heat-resistant, stable to water vapour and other corrosion agents. Hard anodizing complies with the same obtains principles as well as decorative and protective anodization. The difference is in that hard anodizing is achieved at low temperatures and high intensity of electric current. In the paper are presented the results of decorative and hard anodization for specimens made from several aluminium alloys in terms of the appearance of the specimens and of the thickness of the anodized.

Preparation of TiO(2) layers on cp-Ti and Ti6Al4V by thermal and anodic oxidation and by sol-gel coating techniques and their characterization.

PubMed

Velten, D; Biehl, V; Aubertin, F; Valeske, B; Possart, W; Breme, J

2002-01-01

The excellent biocompatibility of titanium and its alloys used, for example, for medical devices, is associated with the properties of their surface oxide. For a better understanding of the tissue reaction in contact with the oxide layer, knowledge of the chemical and physical properties of this layer is of increasing interest. In this study, titania films were produced on cp-Ti and Ti6Al4V substrates by thermal oxidation, anodic oxidation, and by the sol-gel process. The thickness and structure of the films produced under different conditions were determined by ellipsometry, infrared spectroscopy, and X-ray diffraction measurements. The corrosion properties of these layers were investigated by current density-potential curves under physiological conditions. The oxide layers produced on cp-Ti and Ti6Al4V by thermal oxidation consist of TiO(2) in the rutile structure. For the anodized samples the structure of TiO(2) is a mixture of amorphous phase and anatase. The structure of the coatings produced by the sol-gel process for a constant annealing time depends on the annealing temperature, and with increasing temperature successively amorphous, anatase, and rutile structure is observed. Compared to the uncoated, polished substrate with a natural oxide layer, the corrosion resistance of cp-Ti and Ti6Al4V is increased for the samples with an oxide layer thickness of about 100 nm, independent of the oxidation procedure. Copyright 2001 John Wiley & Sons, Inc.

Chemical reaction of atomic oxygen with evaporated films of copper, part 4

NASA Technical Reports Server (NTRS)

Fromhold, A. T.; Williams, J. R.

1990-01-01

Evaporated copper films were exposed to an atomic oxygen flux of 1.4 x 10(exp 17) atoms/sq cm per sec at temperatures in the range 285 to 375 F (140 to 191 C) for time intervals between 2 and 50 minutes. Rutherford backscattering spectroscopy (RBS) was used to determine the thickness of the oxide layers formed and the ratio of the number of copper to oxygen atoms in the layers. Oxide film thicknesses ranged from 50 to 3000 A (0.005 to 0.3 microns, or equivalently, 5 x 10(exp -9) to 3 x 10(exp -7); it was determined that the primary oxide phase was Cu2O. The growth law was found to be parabolic (L(t) varies as t(exp 1/2)), in which the oxide thickness L(t) increases as the square root of the exposure time t. The analysis of the data is consistent with either of the two parabolic growth laws. (The thin-film parabolic growth law is based on the assumption that the process is diffusion controlled, with the space charge within the growing oxide layer being negligible. The thick-film parabolic growth law is also based on a diffusion controlled process, but space-charge neutrality prevails locally within very thick oxides.) In the absence of a voltage measurement across the growing oxide, a distinction between the two mechanisms cannot be made, nor can growth by the diffusion of neutral atomic oxygen be entirely ruled out. The activation energy for the reaction is on the order of 1.1 eV (1.76 x 10(exp -19) joule, or equivalently, 25.3 kcal/mole).

Influence of surface contamination on the wettability of heat transfer surfaces

DOE PAGES

Forrest, Eric Christopher; Schulze, Roland; Liu, Cheng; ...

2015-08-08

In this study, the wettability of heat transfer surfaces plays an important role in liquid–vapor phase change phenomena, including boiling incipience, the critical heat flux, the Leidenfrost transition, and condensation. The influence of adsorbed surface contamination at the nanoscale, though seldom considered, can have a profound impact on wetting behavior. This study quantitatively investigates the impact of contaminant layer thickness on wettability. Various cleaning treatments are explored on zirconium and 6061 aluminum to determine the effect on contaminant and oxide layer thickness. Angle-resolved X-ray photoelectron spectroscopy can be used to measure the thickness of oxide and contaminant layers, which ismore » then correlated to wettability by measuring the equilibrium contact angle. Results indicate that even after solvent cleaning, the contact angle of water on practical heat transfer surfaces is dominated by a hydrocarbon contaminant overlayer around five nanometers thick.« less

Influence of surface contamination on the wettability of heat transfer surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forrest, Eric Christopher; Schulze, Roland; Liu, Cheng

In this study, the wettability of heat transfer surfaces plays an important role in liquid–vapor phase change phenomena, including boiling incipience, the critical heat flux, the Leidenfrost transition, and condensation. The influence of adsorbed surface contamination at the nanoscale, though seldom considered, can have a profound impact on wetting behavior. This study quantitatively investigates the impact of contaminant layer thickness on wettability. Various cleaning treatments are explored on zirconium and 6061 aluminum to determine the effect on contaminant and oxide layer thickness. Angle-resolved X-ray photoelectron spectroscopy can be used to measure the thickness of oxide and contaminant layers, which ismore » then correlated to wettability by measuring the equilibrium contact angle. Results indicate that even after solvent cleaning, the contact angle of water on practical heat transfer surfaces is dominated by a hydrocarbon contaminant overlayer around five nanometers thick.« less

Investigations into the structure of PEO-layers for understanding of layer formation

NASA Astrophysics Data System (ADS)

Friedemann, A. E. R.; Thiel, K.; Haßlinger, U.; Ritter, M.; Gesing, Th. M.; Plagemann, P.

2018-06-01

Plasma electrolytic oxidation (PEO) is a type of high-voltage anodic oxidation process capable of producing a thick oxide layer with a wide variety of structural and chemical properties influenced by the electrolytic system. This process enables the combined adjustment of various characteristics, i.e. the morphology and chemical composition. The procedure facilitates the possibility of generating an individual structure as well as forming a crystalline surface in a single step. A highly porous surface with a high crystalline content consisting of titanium dioxide phases is ensured through the process of plasma electrolytic oxidizing pure titanium. In the present study plasma electrolytic oxidized TiO2-layers were investigated regarding their crystallinity through the layer thickness. The layers were prepared with a high applied voltage of 280 V to obtain a PEO-layer with highly crystalline anatase and rutile amounts. Raman spectroscopy and electron backscatter diffraction (EBSD) were selected to clarify the structure of the oxide layer with regard to its crystallinity and phase composition. The composition of the TiO2-phases is more or less irregularly distributed as a result of the higher energy input on the uppermost side of the layer. Scanning transmission electron microscopy (STEM) provided a deeper understanding of the structure and the effects of plasma discharges on the layer. It was observed that the plasma discharges have a strong influence on crystallite formation on top of the oxide layer and also at the boundary layer to the titanium substrate. Therefore, small crystallites of TiO2 could be detected in these regions. In addition, it was shown that amorphous TiO2 phases are formed around the characteristic pore structures, which allows the conclusion to be drawn that a rapid cooling from the gas phase had to take place in these areas.

Improvement of light extraction for a target wavelength in InGaN/GaN LEDs with an indium tin oxide dual layer by oblique angle deposition

NASA Astrophysics Data System (ADS)

Seo, Dong-Ju; Lee, Dong-Seon

2016-08-01

GaN-based blue LEDs were fabricated and studied with porous, dense, and dual-layer indium tin oxide (ITO) structures as transparent top electrodes to enhance light extraction. The electroluminescence intensity of the LED with a thickness-optimized and refractive-index-tuned ITO dual layer at I = 20 mA was higher by 19.7% than that of the conventional LED with a 200 nm planar ITO. This study confirmed that an ITO dual layer can be made with a single material by optimizing the thickness and tuning the refractive index, which improves the power output without any electrical property degradation.

Protecting nickel with graphene spin-filtering membranes: A single layer is enough

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, M.-B.; Dlubak, B.; Piquemal-Banci, M.

2015-07-06

We report on the demonstration of ferromagnetic spin injectors for spintronics which are protected against oxidation through passivation by a single layer of graphene. The graphene monolayer is directly grown by catalytic chemical vapor deposition on pre-patterned nickel electrodes. X-ray photoelectron spectroscopy reveals that even with its monoatomic thickness, monolayer graphene still efficiently protects spin sources against oxidation in ambient air. The resulting single layer passivated electrodes are integrated into spin valves and demonstrated to act as spin polarizers. Strikingly, the atom-thick graphene layer is shown to be sufficient to induce a characteristic spin filtering effect evidenced through the signmore » reversal of the measured magnetoresistance.« less

Study of thickness and uniformity of oxide passivation with DI-O3 on silicon substrate for electronic and photonic applications

NASA Astrophysics Data System (ADS)

Sharma, Mamta; Hazra, Purnima; Singh, Satyendra Kumar

2018-05-01

Since the beginning of semiconductor fabrication technology evolution, clean and passivated substrate surface is one of the prime requirements for fabrication of Electronic and optoelectronic device fabrication. However, as the scale of silicon circuits and device architectures are continuously decreased from micrometer to nanometer (from VLSI to ULSI technology), the cleaning methods to achieve better wafer surface qualities has raised research interests. The development of controlled and uniform silicon dioxide is the most effective and reliable way to achieve better wafer surface quality for fabrication of electronic devices. On the other hand, in order to meet the requirement of high environment safety/regulatory standards, the innovation of cleaning technology is also in demand. The controlled silicon dioxide layer formed by oxidant de-ionized ozonated water has better uniformity. As the uniformity of the controlled silicon dioxide layer is improved on the substrate, it enhances the performance of the devices. We can increase the thickness of oxide layer, by increasing the ozone time treatment. We reported first time to measurement of thickness of controlled silicon dioxide layer and obtained the uniform layer for same ozone time.

Characterization of oxide scales grown on alloy 310S stainless steel after long term exposure to supercritical water at 500 °C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Behnamian, Yashar, E-mail: behnamia@ualberta.ca

The oxide scale grown of static capsules made of alloy 310S stainless steel was investigated by exposure to the supercritical water at 500 °C 25 MPa for various exposure times up to 20,000 h. Characterization techniques such as X-ray diffraction, scanning/transmission electron microscopy, energy dispersive spectroscopy, and fast Fourier transformation were employed on the oxide scales. The elemental and phase analyses indicated that long term exposure to the SCW resulted in the formation of scales identified as Fe{sub 3}O{sub 4} (outer layer), Fe-Cr spinel (inner layer), Cr{sub 2}O{sub 3} (transition layer) on the substrate, and Ni-enrichment (chrome depleted region) inmore » the alloy 310S. It was found that the layer thickness and weight gain vs. exposure time followed parabolic law. The oxidation mechanism and scales grown on the alloy 310S stainless steel exposed to SCW are discussed. - Highlights: •Oxidation of alloy 310S stainless steel exposed to SCW (500 °C/25 MPa) •The layer thickness and weight gain vs. exposure time followed parabolic law. •Oxide layers including Fe{sub 3}O{sub 4} (outer), Fe-Cr spinel (inner) and Cr{sub 2}O{sub 3} (transition) •Ni element is segregated by the selective oxidation of Cr.« less

Formation of thick stratiform Fe-Ti oxide layers in layered intrusion and frequent replenishment of fractionated mafic magma: Evidence from the Panzhihua intrusion, SW China

NASA Astrophysics Data System (ADS)

Song, Xie-Yan; Qi, Hua-Wen; Hu, Rui-Zhong; Chen, Lie-Meng; Yu, Song-Yue; Zhang, Jia-Fei

2013-03-01

Panzhihua intrusion is one of the largest layered intrusions that hosts huge stratiform Fe-Ti oxide layers in the central part of the Emeishan large igneous province, SW China. Up to 60 m thick stratiform massive Fe-Ti oxide layers containing 85 modal% of magnetite and ilmenite and overlying magnetite gabbro compose cyclic units of the Lower Zone of the intrusion. The cyclic units of the Middle Zone consist of magnetite gabbro and overlying gabbro. In these cyclic units, contents of Fe2O3(t), TiO2 and Cr and Fe3+/Ti4+ ratio of the rocks decrease upward, Cr content of magnetite and forsterite percentage of olivine decrease as well. The Upper Zone consists of apatite gabbro characterized by enrichment of incompatible elements (e.g., 12-18 ppm La, 20-28 ppm Y) and increasing of Fe3+/Ti4+ ratio (from 1.3 to 2.3) upward. These features indicate that the Panzhihua intrusion was repeatedly recharged by more primitive magma and evolved magmas had been extracted. Calculations using MELTS indicate that extensive fractionation of olivine and clinopyroxene in deep level resulted in increasing Fe and Ti contents in the magma. When these Fe-Ti-enriched magmas were emplaced along the base of the Panzhihua intrusion, Fe-Ti oxides became an early crystallization phase, leading to a residual magma of lower density. We propose that the unusually thick stratiform Fe-Ti oxide layers resulted from coupling of gravity settling and sorting of the crystallized Fe-Ti oxides from Fe-Ti-enriched magmas and frequent magma replenishment along the floor of the magma chamber.

Synchrotron X-ray diffraction investigations on strains in the oxide layer of an irradiated Zircaloy fuel cladding

NASA Astrophysics Data System (ADS)

Chollet, Mélanie; Valance, Stéphane; Abolhassani, Sousan; Stein, Gene; Grolimund, Daniel; Martin, Matthias; Bertsch, Johannes

2017-05-01

For the first time the microstructure of the oxide layer of a Zircaloy-2 cladding after 9 cycles of irradiation in a boiling water reactor has been analyzed with synchrotron micro-X-ray diffraction. Crystallographic strains of the monoclinic and to some extent of the tetragonal ZrO2 are depicted through the thick oxide layer. Thin layers of sub-oxide at the oxide-metal interface as found for autoclave-tested samples and described in the literature, have not been observed in this material maybe resulting from irradiation damage. Shifts of selected diffraction peaks of the monoclinic oxide show that the uniform strain produced during oxidation is orientated in the lattice and displays variations along the oxide layer. Diffraction peaks and their shifts from families of diffracting planes could be translated into a virtual tensor. This virtual tensor exhibits changes through the oxide layer passing by tensile or compressive components.

Enhancement of magnetoresistance with low interlayer coupling by insertion of a nano-oxide layer into a free magnetic layer

NASA Astrophysics Data System (ADS)

Nam, Chunghee; Lee, Ki-Su; Cho, B. K.

2005-05-01

We studied the interlayer coupling strength (Hin) and GMR ratio of a spin-valve with the top free layer, separated by a nano-oxide layer (NOL). With the total thickness of the top free layer being fixed at 60Å, the physical properties of the NOL spin-valve were studied with the thickness (tf) of the free layer under the inserted NOL and compared with those of the normal spin-valve with the same thickness as tf. It was found that the spin-valve with NOL has a higher GMR ratio than that of the normal spin-valve at the optimal condition (tf=40Å) after thermal annealing at T =250°C. The NOL spin-valve also shows a lower Hin than that of the optimal normal spin-valve with tf=40Å, which is comparable to that of the normal spin-valve with tf=60Å. This indicates that the enhancement of GMR, while keeping the Hin to be low, can be achieved by inserting a NOL into the top free layer.

The potential of cashew gum functionalization as building blocks for layer-by-layer films.

PubMed

Leite, Álvaro J; Costa, Rui R; Costa, Ana M S; Maciel, Jeanny S; Costa, José F G; de Paula, Regina C M; Mano, João F

2017-10-15

Cashew gum (CG), an exudate polysaccharide from Anacardium occidentale trees, was carboxymethylated (CGCm) and oxidized (CGO). These derivatives were characterized by FTIR and zeta potential measurements confirming the success of carboxymethylation and oxidation reactions. Nanostructured multilayered films were then produced through layer-by-layer (LbL) assembly in conjugation with chitosan via electrostatic interactions or Schiff bases covalent bonds. The films were analyzed by QCM-D and AFM. CG functionalization increased the film thickness, with the highest thickness being achieved for the lowest oxidation degree. The roughest surface was obtained for the CGO with the highest oxidation degree due to the predominance of covalent Schiff bases. This work shows that nanostructured films can be assembled and stabilized by covalent bonds in alternative to the conventional electrostatic ones. Moreover, the functionalization of CG can increase its feasibility in multilayers films, widening its potential in biomedical, food industry, or environmental applications. Copyright © 2017 Elsevier Ltd. All rights reserved.

Serially connected solid oxide fuel cells having monolithic cores

DOEpatents

Herceg, J.E.

1985-05-20

Disclosed is a solid oxide fuel cell for electrochemically combining fuel and oxidant for generating galvanic output. The cell core has an array of cell segments electrically serially connected in the flow direction, each segment consisting of electrolyte walls and interconnect that are substantially devoid of any composite inert materials for support. Instead, the core is monolithic, where each electrolyte wall consists of thin layers of cathode and anode materials sandwiching a thin layer of electrolyte material therebetween. Means direct the fuel to the anode-exposed core passageways and means direct the oxidant to the cathode-exposed core passageways; and means also direct the galvanic output to an exterior circuit. Each layer of the electrolyte composite materials is of the order of 0.002 to 0.01 cm thick; and each layer of the cathode and anode materials is of the order of 0.002 to 0.05 cm thick. Between 2 and 50 cell segments may be connected in series.

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

NASA Astrophysics Data System (ADS)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

High density nonmagnetic cobalt in thin films

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Singh, Surendra; Basu, Saibal; Roy, Anupam; Movva, Hema C. P.; Lauter, V.; Satpati, B.; Dev, B. N.

2018-05-01

Recently high density (HD) nonmagnetic cobalt has been discovered in a nanoscale cobalt thin film, grown on Si(111) single crystal. This form of cobalt is not only nonmagnetic but also superconducting. These promising results have encouraged further investigations of the growth of the nonmagnetic (NM) phase of cobalt. In the original investigation, the cobalt film had a natural cobalt oxide at the top. We have investigated whether the growth of HD NM cobalt layers in the thin film depends on (i) a capping layer on the cobalt film, (ii) the thickness of the cobalt film and (iii) the nature of the substrate on which the cobalt film is grown. The results of such investigations indicate that for cobalt films capped with a thin gold layer, and for various film thicknesses, HD NM cobalt layers are formed. However, instead of a Si substrate, when the cobalt films are grown on oxide substrates, such as silicon oxide or cobalt oxide, HD NM cobalt layers are not formed. The difference is attributed to the nature—crystalline or amorphous—of the substrate.

Solid oxide fuel cell having monolithic core

DOEpatents

Ackerman, J.P.; Young, J.E.

1983-10-12

A solid oxide fuel cell is described for electrochemically combining fuel and oxidant for generating galvanic output, wherein the cell core has an array of electrolyte and interconnect walls that are substantially devoid of any composite inert materials for support. Instead, the core is monolithic, where each electrolyte wall consists of thin layers of cathode and anode materials sandwiching a thin layer of electrolyte material therebetween. The electrolyte walls are arranged and backfolded between adjacent interconnect walls operable to define a plurality of core passageways alternately arranged where the inside faces thereof have only the anode material or only the cathode material exposed. Means direct the fuel to the anode-exposed core passageways and means direct the oxidant to the anode-exposed core passageways and means direct the oxidant to the cathode-exposed core passageway; and means also direct the galvanic output to an exterior circuit. Each layer of the electrolyte and interconnect materials is of the order of 0.002 to 0.01 cm thick; and each layer of the cathode and anode materials is of the order of 0.002 to 0.05 cm thick.

Structural characterization of terrestrial microbial Mn oxides from Pinal Creek, AZ

USGS Publications Warehouse

Bargar, J.R.; Fuller, C.C.; Marcus, M.A.; Brearley, A.J.; Perez De la Rosa, M.; Webb, S.M.; Caldwell, W.A.

2009-01-01

The microbial catalysis of Mn(II) oxidation is believed to be a dominant source of abundant sorption- and redox-active Mn oxides in marine, freshwater, and subsurface aquatic environments. In spite of their importance, environmental oxides of known biogenic origin have generally not been characterized in detail from a structural perspective. Hyporheic zone Mn oxide grain coatings at Pinal Creek, Arizona, a metals-contaminated stream, have been identified as being dominantly microbial in origin and are well studied from bulk chemistry and contaminant hydrology perspectives. This site thus presents an excellent opportunity to study the structures of terrestrial microbial Mn oxides in detail. XRD and EXAFS measurements performed in this study indicate that the hydrated Pinal Creek Mn oxide grain coatings are layer-type Mn oxides with dominantly hexagonal or pseudo-hexagonal layer symmetry. XRD and TEM measurements suggest the oxides to be nanoparticulate plates with average dimensions on the order of 11 nm thick ?? 35 nm diameter, but with individual particles exhibiting thickness as small as a single layer and sheets as wide as 500 nm. The hydrated oxides exhibit a 10-?? basal-plane spacing and turbostratic disorder. EXAFS analyses suggest the oxides contain layer Mn(IV) site vacancy defects, and layer Mn(III) is inferred to be present, as deduced from Jahn-Teller distortion of the local structure. The physical geometry and structural details of the coatings suggest formation within microbial biofilms. The biogenic Mn oxides are stable with respect to transformation into thermodynamically more stable phases over a time scale of at least 5 months. The nanoparticulate layered structural motif, also observed in pure culture laboratory studies, appears to be characteristic of biogenic Mn oxides and may explain the common occurrence of this mineral habit in soils and sediments. ?? 2008 Elsevier Ltd.

Spin-coated epoxy resin embedding technique enables facile SEM/FIB thickness determination of porous metal oxide ultra-thin films.

PubMed

Peña, B; Owen, G Rh; Dettelbach, K E; Berlinguette, C P

2018-01-25

A facile nonsubjective method was designed to measure porous nonconductive iron oxide film thickness using a combination of a focused ion beam (FIB) and scanning electron microscopy. Iron oxide films are inherently nonconductive and porous, therefore the objective of this investigation was to optimize a methodology that would increase the conductivity of the film to facilitate high resolution imaging with a scanning electron microscopy and to preserve the porous nature of the film that could potentially be damaged by the energy of the FIB. Sputter coating the sample with a thin layer of iridium before creating the cross section with the FIB decreased sample charging and drifting, but differentiating the iron layer from the iridium coating with backscattered electron imaging was not definitive, making accurate assumptions of the delineation between the two metals difficult. Moreover, the porous nature of the film was lost due to beam damage following the FIB process. A thin layer plastication technique was therefore used to embed the porous film in epoxy resin that would provide support for the film during the FIB process. However, the thickness of the resin created using conventional thin layer plastication processing varied across the sample, making the measuring process only possible in areas where the resin layer was at its thinnest. Such variation required navigating the area for ideal milling areas, which increased the subjectivity of the process. We present a method to create uniform thin resin layers, of controlled thickness, that are ideal for quantifying the thickness of porous nonconductive films with FIB/scanning electron microscopy. © 2018 The Authors Journal of Microscopy © 2018 Royal Microscopical Society.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matvejeff, M., E-mail: mikko.matvejeff@picosun.com; Department of Chemistry, Aalto University, Kemistintie 1, 02150 Espoo; Ahvenniemi, E.

We study magnetic coupling between hole-doped manganite layers separated by either a perovskite or a rock-salt barrier of variable thickness. Both the type and the quality of the interface have a strong impact on the minimum critical barrier thickness where the manganite layers become magnetically decoupled. A rock-salt barrier layer only 1 unit cell (0.5 nm) thick remains insulating and is able to magnetically de-couple the electrode layers. The technique can therefore be used for developing high-performance planar oxide electronic devices such as magnetic tunnel junctions and quantum well structures that depend on magnetically and electronically sharp heterointerfaces.

Usage of Neural Network to Predict Aluminium Oxide Layer Thickness

PubMed Central

Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

2015-01-01

This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A·dm−2 and 3 A·dm−2 for creating aluminium oxide layer. PMID:25922850

Usage of neural network to predict aluminium oxide layer thickness.

PubMed

Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

2015-01-01

This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A · dm(-2) and 3 A · dm(-2) for creating aluminium oxide layer.

[Influence of Vallisneria spiralis on the physicochemical properties of black-odor sediment in urban sluggish river].

PubMed

Xu, Kuan; Liu, Bo; Wang, Guo-Xiang; Ma, Jiu-Yuan; Cao, Xun; Zhou, Feng

2013-07-01

Using Indoor simulation method, the effect of Vallisneria spiralis on the physicochemical propertise of black and stink sediment was investigated. The surface sediment of urban sluggish river which had been heavily polluted was used as material in the study. The results showed that the redox environment of the sediment was significantly improved by Vallisneria spiralis. During the experiment, the Eh of surface sediment rose from -70 mV to 90 mV. The ferrous content was reduced by 25% in the experiment group while increased by 38% in the control group; the organic matter was decomposed effectively, prevented from natural decomposition to the smelly substances. There was a 3 mm thick greyish yellow oxide layer after 7 days in the experimental group, and the oxide layer gradually thickened over time. The thickness of the oxide layer reached 11 mm at the end of the experiment, and no significant odor was detected. On the contrary, the oxide layer in the control group was only 1 mm thick and the thickness remained unchanged. Meanwhile, an obnoxious odor existed during the whole experiment. The roots of Vallisneria spiralis had significant influence on the porosity of sediment. On one hand, the densification of sediment could be improved by Vallisneria spiralis. On the other hand, Vallisneria spiralis was able to change the state of the surface sediment flows, reduce the erosion of river sediment and inhibit the transfer of black-odor substances, which has a positive ecological meaning.

[The bonding mechanisms of base metals for metal-ceramic crown microstructure analysis of bonding agent and gold bond between porcelain and base metals].

PubMed

Wang, C C; Hsu, C S

1996-06-01

The use of base metal alloys for porcelain fused to a metal crown and bridges has increased recently because of lower price, high hardness, high tensile strength and high elastic modulus. The addition of beryllium to base metal alloys increased fluidity and improved casting fitness. Beryllium also controlled surface oxidation and bonding strength. The bonding agent and gold bonding agent also affected the bonding strength between porcelain and metal alloys. Four commercially available ceramic base alloys were studied (two alloys contained beryllium element, another two did not). The purpose of this investigation was to study the microstructure between porcelain matrix, bonding agent and alloy matrix interfaces. A scanning electron micro-probe analyzer and energy dispersive X-ray spectroscopy (EDXS) were used to study the distribution of elements (Ni, Cr, Mo, Cu, O, Si, Sn, Al) in four base alloys. The following results were obtained: 1. The thickness of the oxidized layer of Rexillium III alloy and Unitbond alloy (contained beryllium) was thinner than Unibond alloy and Wiron 88 alloy (no beryllium). 2. The thickness of the oxidized layer of alloys in air (10 minutes and 30 minutes) was thinner in Unitbond (2.45 microns and 3.80 microns) and thicker in Wiron 88 (4.39 microns and 5.96 microns). 3. The thickness of the oxidized layer occurring for a duration of ten minutes (in vaccum) showed that the Rexillium III alloy was the thinnest (1.93 microns), and Wiron 88 alloy was the thickest (2.30 microns). But in thirty minutes (vacuum), Unitbond alloy was the thinnest (3.37 microns), and Wiron 88 alloy was the thickest (5.51 microns). 4. The intensity of Cr elements was increased obviously near the interface between Unitbond alloy, Wiron 88 alloy (no beryllium) and oxidized layer, but the intensity of Ni and Mo elements was slightly increased. The intensity of Cr element was not increased markedly between Rexillium III alloy, Unitbond alloy (beryllium) and oxidized layer. 5. A white-grayish oxidized layer appeared at the metal-ceramic interfaces but the thickness of oxidized layer was not obviously different. 6. The use of bonding agent at metal-ceramic interface leads to the deposition of many Sn elements at about 40 microns range within the porcelain surface. 7. Second interaction phases at the porcelain layer appeared when gold bonding agent was used, and a 50-100 microns microleakage occurred at the metal-ceramic interface.

Air-stable electrical conduction in oxidized poly[2-methoxy-5-(2-ethylhexyloxy)-p-phenylene vinylene] thin films

NASA Astrophysics Data System (ADS)

Hossein-Babaei, F.; Shabani, P.; Azadinia, M.

2013-11-01

Oxidation-caused electroluminescence and electrical conduction deteriorations in poly[2-methoxy-5-(2-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) have prevented the material from being used in applications requiring air exposure. Here, we report air-stable electrical conduction in oxidized MEH-PPV layers produced by room temperature annealing of MEH-PPV thin films in air. Oxidized layers exhibit lower, but stable, conductivities. As the process is irreversible, the final conductivity is retained in vacuum, inert gas, hydrogen, and oxygen. The oxidation rates recorded at different conditions for layers of varied thickness and electrode configuration are described by a surface oxidation model. Potentials of the oxidized MEH-PPV layers in sensor technology are demonstrated.

Environmental resistance of oxide tags fabricated on 304L stainless steel via nanosecond pulsed laser irradiation

DOE PAGES

Lawrence, Samantha Kay; Adams, David P.; Bahr, David F.; ...

2015-11-14

Nanosecond pulsed laser irradiation was used to fabricate colored, mechanically robust oxide “tags” on 304L stainless steel. Immersion in simulated seawater solution, salt fog exposure, and anodic polarization in a 3.5% NaCl solution were employed to evaluate the environmental resistance of these oxide tags. Single layer oxides outside a narrow thickness range (~ 100–150 nm) are susceptible to dissolution in chloride containing environments. The 304L substrates immediately beneath the oxides corrode severely—attributed to Cr-depletion in the melt zone during laser processing. For the first time, multilayered oxides were fabricated with pulsed laser irradiation in an effort to expand the protectivemore » thickness range while also increasing the variety of film colors attainable in this range. Layered films grown using a laser scan rate of 475 mm/s are more resistant to both localized and general corrosion than oxides fabricated at 550 mm/s. Furthermore, in the absence of pre-processing to mitigate Cr-depletion, layered films can enhance environmental stability of the system.« less

The magnetic properties of a magnetic detector using oxidized amorphous Co 95- xFe 5(BSi) x alloys

NASA Astrophysics Data System (ADS)

Ahn, S. J.; Kim, C. K.; Kim, S. J.; Choi, D. K.; O'Handley, R. C.

2000-07-01

A comparative oxidation study of several amorphous Co 75- xFe 5(BSi) 20+ x alloys was carried out. Reentrant magnetization behavior and field-induced anisotropy which are of a critical importance for a magnetic detector were obtained after oxidation of the amorphous Co-rich ribbons. During this oxidation, the ribbons develop surface oxides which are primarily nonmagnetic borosilicate or a combination of borosilicate and magnetic oxides such CoO or FeO. Beneath this lies a 100-1000 Å thick Co-rich magnetic alloy which may be either HCP or FCC in its crystal structure. The thickness of the Co-crystallized layer is determined by the type of the surface oxides. The oxidation products such as appear to affect the reentrant magnetization behavior of Co-rich amorphous alloys significantly. We have determined the amount of metalloids (a critical concentration of B and Si) which is necessary to form a continuous layer of the most thermodynamically stable oxide, in our case borosilicate, on the surface. We also observed that there is a good correlation between reentrant magnetization and the thickness of Co layer. The best reentrant M- H loop for the magnetic detector was obtained in ribbons with a surface borate-rich borosilicate since it ensures conditions such as (1) metalloid depletion in the substrate and (2) formation of oxygen impurity faults in Co grains that are required for strong reentrant magnetization behavior.

Solid oxide fuel cell having monolithic core

DOEpatents

Ackerman, John P.; Young, John E.

1984-01-01

A solid oxide fuel cell for electrochemically combining fuel and oxidant for generating galvanic output, wherein the cell core has an array of electrolyte and interconnect walls that are substantially devoid of any composite inert materials for support. Instead, the core is monolithic, where each electrolyte wall consists of thin layers of cathode and anode materials sandwiching a thin layer of electrolyte material therebetween, and each interconnect wall consists of thin layers of the cathode and anode materials sandwiching a thin layer of interconnect material therebetween. The electrolyte walls are arranged and backfolded between adjacent interconnect walls operable to define a plurality of core passageways alternately arranged where the inside faces thereof have only the anode material or only the cathode material exposed. Means direct the fuel to the anode-exposed core passageways and means direct the oxidant to the cathode-exposed core passageway; and means also direct the galvanic output to an exterior circuit. Each layer of the electrolyte and interconnect materials is of the order of 0.002-0.01 cm thick; and each layer of the cathode and anode materials is of the order of 0.002-0.05 cm thick.

Characterization of BN rich layer on ammonia treated Nextel{trademark}312 fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khasgiwale, N.R.; Butler, E.P.; Tsakalakos, L.

A BN rich layer grown on Nextel{trademark}312 fibers by appropriate ammonia treatments was evaluated using various complimentary techniques including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM)/Parallel Electron Energy Loss Spectroscopy (PEELS in TEM). Three different ammonia treatments were studied. Ammonia treatment resulted in crystallization of the Nextel{trademark}312 fiber. The BN rich surface layer formed due to ammonia treatment was clearly detected in XPS and PEELS both before and after oxidation. The layer thickness was estimated to be between 5--10 nm. The layer was stable after oxidation treatment at 600 C formore » 100 hours. High resolution TEM observations of the fiber surface revealed a variable BN rich layer thickness. Patches of turbostratic BN were observed under certain conditions, however mostly the layer appeared to be amorphous.« less

Epitaxial thinning process

NASA Technical Reports Server (NTRS)

Siegel, C. M. (Inventor)

1984-01-01

A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

MoO3 Thickness, Thermal Annealing and Solvent Annealing Effects on Inverted and Direct Polymer Photovoltaic Solar Cells

PubMed Central

Chambon, Sylvain; Derue, Lionel; Lahaye, Michel; Pavageau, Bertrand; Hirsch, Lionel; Wantz, Guillaume

2012-01-01

Several parameters of the fabrication process of inverted polymer bulk heterojunction solar cells based on titanium oxide as an electron selective layer and molybdenum oxide as a hole selective layer were tested in order to achieve efficient organic photovoltaic solar cells. Thermal annealing treatment is a common process to achieve optimum morphology, but it proved to be damageable for the performance of this kind of inverted solar cells. We demonstrate using Auger analysis combined with argon etching that diffusion of species occurs from the MoO3/Ag top layers into the active layer upon thermal annealing. In order to achieve efficient devices, the morphology of the bulk heterojunction was then manipulated using the solvent annealing technique as an alternative to thermal annealing. The influence of the MoO3 thickness was studied on inverted, as well as direct, structure. It appeared that only 1 nm-thick MoO3 is enough to exhibit highly efficient devices (PCE = 3.8%) and that increasing the thickness up to 15 nm does not change the device performance.

Mechanical Properties of Degraded PMR-15 Resin

NASA Technical Reports Server (NTRS)

Tsuji, Luis C.; McManus, Hugh L.; Bowles, Kenneth J.

1998-01-01

Thermo-oxidative aging produces a non-uniform degradation state in PMR-15 resin. A surface layer, usually attributed to oxidative degradation, forms. This surface layer has different properties from the inner material. A set of material tests was designed to separate the properties of the oxidized surface layer from the properties of interior material. Test specimens were aged at 316 C in either air or nitrogen, for durations of up to 800 hours. The thickness of the oxidized surface layer in air aged specimens, and the shrinkage and Coefficient of Thermal Expansion (CTE) of nitrogen aged specimens were measured directly. Four-point-bend tests were performed to determine modulus of both the oxidized surface layer and the interior material. Bimaterial strip specimens consisting of oxidized surface material and unoxidized interior material were constructed and used to determine surface layer shrinkage and CTE. Results confirm that the surface layer and core materials have substantially different properties.

Method of making an apparatus for transpiration cooling of substrates such as turbine airfoils

DOEpatents

Alvin, Mary Anne; Anderson, Iver; Heidlof, Andy; White, Emma; McMordie, Bruce

2017-02-28

A method and apparatus for generating transpiration cooling using an oxidized porous HTA layer metallurgically bonded to a substrate having micro-channel architectures. The method and apparatus generates a porous HTA layer by spreading generally spherical HTA powder particles on a substrate, partially sintering under O.sub.2 vacuum until the porous HTA layer exhibits a porosity between 20% and 50% and a neck size ratio between 0.1 and 0.5, followed by a controlled oxidation generating an oxidation layer of alumina, chromia, or silica at a thickness of about 20 to about 500 nm. In particular embodiments, the oxidized porous HTA layer and the substrate comprise Ni as a majority element. In other embodiments, the oxidized porous HTA layer and the substrate further comprise Al, and in additional embodiments, the oxidized porous HTA layer and the substrate comprise .gamma.-Ni+.gamma.'-Ni.sub.3Al.

National Hypersonic Science Center for Materials and Structures

DTIC Science & Technology

2014-08-31

Hence, ( Zr , Nb )B2 showed improved oxidation resistance compared to pure ZrB2. 9.2 Effects of W Additives on Oxide Scale Thickness and the...TM Additives on Oxide Scale Growth on ZrB2 The oxidation behavior of ( Zr , Nb )B2 ceramics was studied to determine the effect of Nb on the thickness...and morphology of the oxide scales on ZrB2 [B6]. At 1500 °C, exposure to air resulted in the formation of a two-layer oxide scale structure on ( Zr , Nb

Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

PubMed

Shin, Jin-Ha; Yun, Sook Young; Lee, Chang Hyoung; Park, Hwa-Sun; Suh, Su-Jeong

2015-11-01

Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness.

Anodic behavior of uranium in AlCl3-1-ethyl-3-methyl-imidazolium chloride ionic liquid

NASA Astrophysics Data System (ADS)

Jiang, Yidong; Luo, Lizhu; Wang, Shaofei; Bin, Ren; Zhang, Guikai; Wang, Xiaolin

2018-01-01

The oxidation state of metals unambiguously affects its anodic behavior in ionic liquid. We systematically investigated the anodic behavior of uranium with different surface oxidation states by electrochemical measurements, spectroscopic methods and surface analysis techniques. In the anodic process, metal uranium can be oxidized to U3+. The corresponding products accumulated on the metal/ILs interface will form a viscous layer. The anodic behavior of uranium is also strongly dependent upon the surface oxide states including thickness and homogeneity of the oxide film. With an increase in the thickness of oxide film, it will be breached at potentials in excess of a critical value. A uniform oxide on uranium surface can be breached evenly, and then the underlying metal starts to dissolve forming a viscous layer which can facilitate uniformly stripping of oxide, thus giving an oxide-free surface. Otherwise, a nonuniform oxide can result in a severe pitted surface with residue oxygen.

Lead zirconate titanate-nickel zink ferrite thick-film composites: obtaining by the screen printing technique and magnetoelectric properties

NASA Astrophysics Data System (ADS)

Bush, A. A.; Shkuratov, V. Ya.; Chernykh, I. A.; Fetisov, Y. K.

2010-03-01

Layered thick-film composites containing one lead zirconate titanate (PZT) layer, one nickel zinc ferrite (NZF) layer, two PZT-NZF layers, or three PZT-NZF-PZT layers each 40-50 μm thick are prepared. The layers are applied by screen printing on a ceramic aluminum oxide substrate with a preformed contact (conducting) layer. The dielectric properties of the composites are studied in the temperature interval 80-900 K and the frequency interval 25 Hz-1 MHz. Polarized samples exhibit piezoelectric, pyroelectric, and magnetoelectric effects. In tangentially magnetized two- and three-layer composites, the magnetoelectric conversion factor equals 57 kV/(m T) at low frequencies and reaches 2000 kV/(m T) at the mechanical resonance frequency.

Simple approach for high-contrast optical imaging and characterization of graphene-based sheets.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, I.; Pelton, M.; Piner, R.

2007-12-01

A simple optical method is presented for identifying and measuring the effective optical properties of nanometer-thick, graphene-based materials, based on the use of substrates consisting of a thin dielectric layer on silicon. High contrast between the graphene-based materials and the substrate is obtained by choosing appropriate optical properties and thickness of the dielectric layer. The effective refractive index and optical absorption coefficient of graphene oxide, thermally reduced graphene oxide, and graphene are obtained by comparing the predicted and measured contrasts.

Effect of surface state on the oxidation behavior of welded 308L in simulated nominal primary water of PWR

NASA Astrophysics Data System (ADS)

Ming, Hongliang; Zhang, Zhiming; Wang, Jiazhen; Zhu, Ruolin; Ding, Jie; Wang, Jianqiu; Han, En-Hou; Ke, Wei

2015-05-01

The oxidation behavior of 308L weld metal (WM) with different surface state in the simulated nominal primary water of pressurized water reactor (PWR) was studied by scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) analyzer and X-ray photoelectron spectroscopy (XPS). After 480 h immersion, a duplex oxide film composed of a Fe-rich outer layer (Fe3O4, Fe2O3 and a small amount of NiFe2O4, Ni(OH)2, Cr(OH)3 and (Ni, Fe)Cr2O4) and a Cr-rich inner layer (FeCr2O4 and NiCr2O4) can be formed on the 308L WM samples with different surface state. The surface state has no influence on the phase composition of the oxide films but obviously affects the thickness of the oxide films and the morphology of the oxides (number & size). With increasing the density of dislocations and subgrain boundaries in the cold-worked superficial layer, the thickness of the oxide film, the number and size of the oxides decrease.

Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films

NASA Astrophysics Data System (ADS)

Schüffelgen, Peter; Rosenbach, Daniel; Neumann, Elmar; Stehno, Martin P.; Lanius, Martin; Zhao, Jialin; Wang, Meng; Sheehan, Brendan; Schmidt, Michael; Gao, Bo; Brinkman, Alexander; Mussler, Gregor; Schäpers, Thomas; Grützmacher, Detlev

2017-11-01

Topological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3-4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al.

Effect of layer thickness on the properties of nickel thermal sprayed steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurisna, Zuhri, E-mail: zuhri-nurisna@yahoo.co.id; Triyono,, E-mail: triyonomesin@uns.ac.id; Muhayat, Nurul, E-mail: nurulmuhayat@staff.uns.ac.id

Thermal arc spray nickel coating is widely used for decorative and functional applications, by improving corrosion resistance, wear resistance, heat resistence or by modifying other properties of the coated materials. There are several properties have been studied. Layer thickness of nickel thermal sprayed steel may be make harder the substrate surface. In this study, the effect of layer thickness of nickel thermal sprayed steel has been investigated. The rectangular substrate specimens were coated by Ni–5 wt.% Al using wire arc spray method. The thickness of coating layers were in range from 0.4 to 1.0 mm. Different thickness of coating layers weremore » conducted to investigate their effect on hardness and morphology. The coating layer was examined by using microvickers and scanning electron microscope with EDX attachment. Generally, the hardness at the interface increased with increasing thickness of coating layers for all specimens due to higher heat input during spraying process. Morphology analysis result that during spraying process aluminum would react with surrounding oxygen and form aluminum oxide at outer surface of splat. Moreover, porosity was formed in coating layers. However, presence porosity is not related to thickness of coating material. The thicker coating layer resulted highesr of hardness and bond strength.« less

A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers.

PubMed

Xu, Man; Wachters, Arthur J H; van Deelen, Joop; Mourad, Maurice C D; Buskens, Pascal J P

2014-03-10

We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIGS layer does not decrease monotonically with its layer thickness due to interference effects. Ergo, high precision is required in the CIGS production process, especially when using ultra-thin absorber layers, to accurately realize the required thickness of the ZnO, cadmium sulfide (CdS) and CIGS layer. We show that patterning the ZnO window layer can strongly suppress these interference effects allowing a higher tolerance in the production process.

High-temperature oxidation kinetics of sponge-based E110 cladding alloy

DOE PAGES

Yan, Yong; Garrison, Benton E.; Howell, Mike; ...

2017-11-03

Two-sided oxidation experiments were recently conducted at 900°C–1200 °C in flowing steam with samples of sponge-based Zr-1Nb alloy E110. Although the old electrolytic E110 tubing exhibited a high degree of susceptibility to nodular corrosion and experienced breakaway oxidation rates in a relatively short time, the new sponge-based E110 demonstrated steam oxidation behavior comparable to Zircaloy-4. Sample weight gain and oxide layer thickness measurements were performed on oxidized E110 specimens and compared to oxygen pickup and oxide layer thickness calculations using the Cathcart-Pawel correlation. Our study shows that the sponge-based E110 follows the parabolic law at temperatures above 1015 °C. Atmore » or below 1015 °C, the oxidation rate was very low when compared to Zircaloy-4 and can be represented by a cubic expression. No breakaway oxidation was observed at 1000 °C for oxidation times up to 10,000 s. Arrhenius expressions are given to describe the parabolic rate constants at temperatures above 1015 °C and cubic rate constants are provided for temperatures below 1015 °C. The weight gains calculated by our equations are in excellent agreement with the measured sample weight gains at all test temperatures. In addition to the as-fabricated E110 cladding sample, prehydrided E110 cladding with hydrogen concentrations in the 100–150 wppm range was also investigated. The effect of hydrogen content on sponge-based E110 oxidation kinetics was minimal. No significant difference was found between as-fabricated and hydrided samples with regard to oxygen pickup and oxide layer thickness for hydrogen contents below 150 wppm.« less

High-temperature oxidation kinetics of sponge-based E110 cladding alloy

NASA Astrophysics Data System (ADS)

Yan, Yong; Garrison, Benton E.; Howell, Mike; Bell, Gary L.

2018-02-01

Two-sided oxidation experiments were recently conducted at 900°C-1200 °C in flowing steam with samples of sponge-based Zr-1Nb alloy E110. Although the old electrolytic E110 tubing exhibited a high degree of susceptibility to nodular corrosion and experienced breakaway oxidation rates in a relatively short time, the new sponge-based E110 demonstrated steam oxidation behavior comparable to Zircaloy-4. Sample weight gain and oxide layer thickness measurements were performed on oxidized E110 specimens and compared to oxygen pickup and oxide layer thickness calculations using the Cathcart-Pawel correlation. Our study shows that the sponge-based E110 follows the parabolic law at temperatures above 1015 °C. At or below 1015 °C, the oxidation rate was very low when compared to Zircaloy-4 and can be represented by a cubic expression. No breakaway oxidation was observed at 1000 °C for oxidation times up to 10,000 s. Arrhenius expressions are given to describe the parabolic rate constants at temperatures above 1015 °C and cubic rate constants are provided for temperatures below 1015 °C. The weight gains calculated by our equations are in excellent agreement with the measured sample weight gains at all test temperatures. In addition to the as-fabricated E110 cladding sample, prehydrided E110 cladding with hydrogen concentrations in the 100-150 wppm range was also investigated. The effect of hydrogen content on sponge-based E110 oxidation kinetics was minimal. No significant difference was found between as-fabricated and hydrided samples with regard to oxygen pickup and oxide layer thickness for hydrogen contents below 150 wppm.

Microstructure and high temperature oxidation resistance of Ti-Ni gradient coating on TA2 titanium alloy fabricated by laser cladding

NASA Astrophysics Data System (ADS)

Liu, Fencheng; Mao, Yuqing; Lin, Xin; Zhou, Baosheng; Qian, Tao

2016-09-01

To improve the high temperature oxidation resistance of TA2 titanium alloy, a gradient Ni-Ti coating was laser cladded on the surface of the TA2 titanium alloy substrate, and the microstructure and oxidation behavior of the laser cladded coating were investigated experimentally. The gradient coating with a thickness of about 420-490 μm contains two different layers, e.g. a bright layer with coarse equiaxed grain and a dark layer with fine and columnar dendrites, and a transition layer with a thickness of about 10 μm exists between the substrate and the cladded coating. NiTi, NiTi2 and Ni3Ti intermetallic compounds are the main constructive phases of the laser cladded coating. The appearance of these phases enhances the microhardness, and the dense structure of the coating improves its oxidation resistance. The solidification procedure of the gradient coating is analyzed and different kinds of solidification processes occur due to the heat dissipation during the laser cladding process.

Tuning interfacial exchange interactions via electronic reconstruction in transition-metal oxide heterostructures

DOE PAGES

Li, Binzhi; Chopdekar, Rajesh V.; N'Diaye, Alpha T.; ...

2016-10-10

The impact of interfacial electronic reconstruction on the magnetic characteristics of La0.7Sr0.3CoO3 (LSCO)/La0.7Sr0.3MnO3 (LSMO) superlattices was investigated as a function of layer thickness using a combination of soft x-ray magnetic spectroscopy and bulk magnetometry. We found that the magnetic properties of the LSCO layers are impacted by two competing electronic interactions occurring at the LSCO/substrate and LSMO/LSCO interfaces. For thin LSCO layers (< 5 nm), the heterostructures exist in a highly coupled state where the chemically distinct layers behave as a single magnetic compound with magnetically active Co2+ ions. As the LSCO thickness increases, a high coercivity LSCO layer developsmore » which biases a low coercivity layer, which is composed not only of the LSMO layer, but also an interfacial LSCO layer. These results suggest a new route to tune the magnetic properties of transition metal oxide heterostructures through careful control of the interface structure.« less

Magnetoresistance enhancement in specular, bottom-pinned, Mn83Ir17 spin valves with nano-oxide layers

NASA Astrophysics Data System (ADS)

Veloso, A.; Freitas, P. P.; Wei, P.; Barradas, N. P.; Soares, J. C.; Almeida, B.; Sousa, J. B.

2000-08-01

Bottom-pinned Mn83Ir17 spin valves with enhanced specular scattering were fabricated, showing magnetoresistance (MR) values up to 13.6%, lower sheet resistance R□ and higher ΔR□. Two nano-oxide layers (NOL) are grown on both sides of the CoFe/Cu/CoFe spin valve structure by natural oxidation or remote plasma oxidation of the starting CoFe layer. Maximum MR enhancement is obtained after just 1 min plasma oxidation. Rutherford backscattering analysis shows that a 15±2 Å oxide layer grows at the expense of the initial (prior to oxidation) CoFe layer, with ˜12% reduction of the initial 40 Å CoFe thickness. X-ray reflectometry indicates that Kiessig fringes become better defined after NOL growth, indicating smoother inner interfaces, in agreement with the observed decrease of the spin valve ferromagnetic Néel coupling.

Interface composition of InAs nanowires with Al2O3 and HfO2 thin films

NASA Astrophysics Data System (ADS)

Timm, R.; Hjort, M.; Fian, A.; Borg, B. M.; Thelander, C.; Andersen, J. N.; Wernersson, L.-E.; Mikkelsen, A.

2011-11-01

Vertical InAs nanowires (NWs) wrapped by a thin high-κ dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al2O3 and HfO2 films. The native oxide on the NWs is significantly reduced upon high-κ deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail.

Unsupported single-atom-thick copper oxide monolayers

NASA Astrophysics Data System (ADS)

Yin, Kuibo; Zhang, Yu-Yang; Zhou, Yilong; Sun, Litao; Chisholm, Matthew F.; Pantelides, Sokrates T.; Zhou, Wu

2017-03-01

Oxide monolayers may present unique opportunities because of the great diversity of properties of these materials in bulk form. However, reports on oxide monolayers are still limited. Here we report the formation of single-atom-thick copper oxide layers with a square lattice both in graphene pores and on graphene substrates using aberration-corrected scanning transmission electron microscopy. First-principles calculations find that CuO is energetically stable and its calculated lattice spacing matches well with the measured value. Furthermore, free-standing copper oxide monolayers are predicted to be semiconductors with band gaps ˜3 eV. The new wide-bandgap single-atom-thick copper oxide monolayers usher a new frontier to study the highly diverse family of two-dimensional oxides and explore their properties and their potential for new applications.

Effect of oxygen partial pressure on oxidation of Mo-metal

NASA Astrophysics Data System (ADS)

Sharma, Rabindar Kumar; Kumar, Prabhat; Singh, Megha; Gopal, Pawar; Reddy, G. B.

2018-05-01

This report explains the effect of oxygen partial pressure (PO2 ) on oxidation of Mo-metal in oxygen plasma. XRD results indulge that oxide layers formed on Mo-surfaces at different oxygen partial pressures have two different oxide phases (i.e. orthorhombic MoO3 and monoclinic Mo8O23). Intense XRD peaks at high pressure (i.e. 2.0×10-1 Torr) points out the formation of thick oxide layer on Mo-surface due to presence of large oxygen species in chamber and less oxide volatilization. Whereas, at low PO2 (6.5×10-2 and 7.5×10-2 Torr.) the reduced peak strength is owing to high oxide volatilization rate. SEM micrographs and thickness measurements also support XRD results and confirm that the optimum -2value of PO2 to deposited thicker and uniform oxide film on glass substrate is 7.5×10-2 Torr through plasma assistedoxidation process. Further to study the compositional properties, EDX of the sample M2 (the best sample) is carried out, which confirms that the stoichiometric ratio is less than 3 (i.e. 2.88). Less stoichiometric ratio again confirms the presence of sub oxides in oxide layers on Mo metal as evidenced by XRD results. All the observed results are well in consonance with each other.

Polyelectrolyte-mediated assembly of copper-phthalocyanine tetrasulfonate multilayers and the subsequent production of nanoparticulate copper oxide thin films.

PubMed

Chickneyan, Zarui Sara; Briseno, Alejandro L; Shi, Xiangyang; Han, Shubo; Huang, Jiaxing; Zhou, Feimeng

2004-07-01

An approach to producing films of nanometer-sized copper oxide particulates, based on polyelectrolyte-mediated assembly of the precursor, copper(II)phthalocyanine tetrasulfonate (CPTS), is described. Multilayered CPTS and polydiallyldimethylammonium chloride (PDADMAC) were alternately assembled on different planar substrates via the layer-by-layer (LbL) procedure. The growth of CPTS multilayers was monitored by UV-visible spectrometry and quartz crystal microbalance (QCM) measurements. Both the UV-visible spectra and the QCM data showed that a fixed amount of CPTS could be attached to the substrate surface for a given adsorption cycle. Cyclic voltammograms at the CPTS/PDADMAC-covered gold electrode exhibited a decrease in peak currents with the layer number, indicating that the permeability of CPTS multilayers on the electrodes had diminished. When these CPTS multilayered films were calcined at elevated temperatures, uniform thin films composed of nanoparticulate copper oxide could be produced. Ellipsometry showed that the thickness of copper oxide nanoparticulate films could be precisely tailored by varying the thickness of CPTS multilayer films. The morphology and roughness of CPTS multilayer and copper oxide thin films were characterized by atomic force microscopy. X-ray diffraction (XRD) measurements indicated that these thin films contained both CuO and Cu2O nanoparticles. The preparation of such copper oxide thin films with the use of metal complex precursors represents a new route for the synthesis of inorganic oxide films with a controlled thickness.

n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE

NASA Astrophysics Data System (ADS)

Wang, Minhuan; Bian, Jiming; Sun, Hongjun; Liu, Weifeng; Zhang, Yuzhi; Luo, Yingmin

2016-12-01

High quality VO2 films with precisely controlled thickness were grown on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). Results indicated that a distinct reversible semiconductor-to-metal (SMT) phase transition was observed for all the samples in the temperature dependent electrical resistance measurement, and the influence of VO2 layer thickness on the SMT properties of the as-grown n-VO2/p-GaN based nitride-oxide heterostructure was investigated. Meanwhile, the clear rectifying transport characteristics originated from the n-VO2/p-GaN interface were demonstrated before and after SMT of the VO2 over layer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. Moreover, the X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO2 films was principally composed of V4+ with trace amount of V5+. The design and modulation of the n-VO2/p-GaN based heterostructure devices will benefit significantly from these achievements.

Design and fabrication of a reflection far ultraviolet polarizer and retarder

NASA Technical Reports Server (NTRS)

Kim, Jongmin; Zukic, Muamer; Wilson, Michele M.; Torr, Douglas G.

1993-01-01

New methods have been developed for the design of a far ultraviolet multilayer reflection polarizer and retarder. A MgF2/Al/MgF2 three-layer structure deposited on a thick opaque Al film (substrate) is used for the design of polarizers and retarders. The induced transmission and absorption method is used for the design of a polarizer and layer-by-layer electric field calculation method is used for the design of a quarterwave retarder. In order to fabricate these designs in a conventional high vacuum chamber, we have to minimize the oxidation of the Al layers and somehow characterize the oxidized layer. X-ray photoelectron spectroscopy is used to investigate the amount and profile of oxidation. Depth profiling results and a seven layer oxidation model are presented.

Control of the Structure of Diffusion Layer in Carbon Steels Under Nitriding with Preliminary Deposition of Copper Oxide Catalytic Films

NASA Astrophysics Data System (ADS)

Petrova, L. G.; Aleksandrov, V. A.; Malakhov, A. Yu.

2017-07-01

The effect of thin films of copper oxide deposited before nitriding on the phase composition and the kinetics of growth of diffusion layers in carbon steels is considered. The process of formation of an oxide film involves chemical reduction of pure copper on the surface of steel specimens from a salt solution and subsequent oxidation under air heating. The oxide film exerts a catalytic action in nitriding of low- and medium-carbon steels, which consists in accelerated growth of the diffusion layer, the nitride zone in the first turn. The kinetics of the nitriding process and the phase composition of the layer are controlled by the thickness of the copper oxide precursor, i.e., the deposited copper film.

Preliminary study of a solar selective coating system using black cobalt oxide for high temperature solar collectors

NASA Technical Reports Server (NTRS)

Mcdonald, G.

1980-01-01

Black cobalt oxide coatings (high solar absorptance layer) were deposited on thin layers of silver or gold (low emittance layer) which had been previously deposited on oxidized (diffusion barrier layer) stainless steel substrates. The reflectance properties of these coatings were measured at various thicknesses of cobalt for integrated values of the solar and infrared spectrum. The values of absorptance and emittance were calculated from the measured reflectance values, before and after exposure in air at 650 C for approximately 1000 hours. Absorptance and emittance were interdependent functions of the weight of cobalt oxide. Also, these cobalt oxide/noble metal/oxide diffusion barrier coatings have absorptances greater than 0.90 and emittances of approximately 0.20 even after about 1000 hours at 650 C.

Growth and sacrificial oxidation of transition metal nanolayers

NASA Astrophysics Data System (ADS)

Tsarfati, Tim; Zoethout, Erwin; van de Kruijs, Robbert; Bijkerk, Fred

2009-04-01

Growth and oxidation of Au, Pt, Pd, Rh, Cu, Ru, Ni and Co layers of 0.3-4.3 nm thickness on Mo have been investigated with ARPES and AFM. Co and Ni layers oxidize while the Mo remains metallic. For nobler metals, the on top O and oxidation state of subsurface Mo increase, suggesting sacrificial e - donation by Mo. Au and Cu, in spite of their significantly lower surface free energy, grow in islands on Mo and actually promote Mo oxidation. Applications of the sacrificial oxidation in nanometer thin layers exist in a range of nanoscopic devices, such as nano-electronics and protection of e.g. multilayer X-ray optics for astronomy, medicine and lithography.

Oxidized film structure and method of making epitaxial metal oxide structure

DOEpatents

Gan, Shupan [Richland, WA; Liang, Yong [Richland, WA

2003-02-25

A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

Investigation of PDMS based bi-layer elasticity via interpretation of apparent Young's modulus.

PubMed

Sarrazin, Baptiste; Brossard, Rémy; Guenoun, Patrick; Malloggi, Florent

2016-02-21

As the need of new methods for the investigation of thin films on various kinds of substrates becomes greater, a novel approach based on AFM nanoindentation is explored. Substrates of polydimethylsiloxane (PDMS) coated by a layer of hard material are probed with an AFM tip in order to obtain the force profile as a function of the indentation. The equivalent elasticity of those composite systems is interpreted using a new numerical approach, the Coated Half-Space Indentation Model of Elastic Response (CHIMER), in order to extract the thicknesses of the upper layer. Two kinds of coating are investigated. First, chitosan films of known thicknesses between 30 and 200 nm were probed in order to test the model. A second type of samples is produced by oxygen plasma oxidation of the PDMS substrate, which results in the growth of a relatively homogeneous oxide layer. The local nature of this protocol enables measurements at long oxidation time, where the apparition of cracks prevents other kinds of measurements.

Tribocorrosion behaviour of anodic treated titanium surfaces intended for dental implants

NASA Astrophysics Data System (ADS)

Alves, A. C.; Oliveira, F.; Wenger, F.; Ponthiaux, P.; Celis, J.-P.; Rocha, L. A.

2013-10-01

Tribocorrosion plays an important role in the lifetime of metallic implants. Once implanted, biomaterials are subjected to micro-movements in aggressive biological fluids. Titanium is widely used as an implant material because it spontaneously forms a compact and protective nanometric thick oxide layer, mainly TiO2, in ambient air. That layer provides good corrosion resistance, and very low toxicity, but its low wear resistance is a concern. In this work, an anodizing treatment was performed on commercial pure titanium to form a homogeneous thick oxide surface layer in order to provide bioactivity and improve the biological, chemical and mechanical properties. Anodizing was performed in an electrolyte containing β-glycerophosphate and calcium acetate. The influence of the calcium acetate content on the tribocorrosion behaviour of the anodized material was studied. The concentration of calcium acetate in the electrolyte was found to largely affect the crystallographic structure of the resulting oxide layer. Better tribocorrosion behaviour was noticed on increasing the calcium acetate concentration.

WO3 and W Thermal Atomic Layer Etching Using "Conversion-Fluorination" and "Oxidation-Conversion-Fluorination" Mechanisms.

PubMed

Johnson, Nicholas R; George, Steven M

2017-10-04

The thermal atomic layer etching (ALE) of WO 3 and W was demonstrated with new "conversion-fluorination" and "oxidation-conversion-fluorination" etching mechanisms. Both of these mechanisms are based on sequential, self-limiting reactions. WO 3 ALE was achieved by a "conversion-fluorination" mechanism using an AB exposure sequence with boron trichloride (BCl 3 ) and hydrogen fluoride (HF). BCl 3 converts the WO 3 surface to a B 2 O 3 layer while forming volatile WO x Cl y products. Subsequently, HF spontaneously etches the B 2 O 3 layer producing volatile BF 3 and H 2 O products. In situ spectroscopic ellipsometry (SE) studies determined that the BCl 3 and HF reactions were self-limiting versus exposure. The WO 3 ALE etch rates increased with temperature from 0.55 Å/cycle at 128 °C to 4.19 Å/cycle at 207 °C. W served as an etch stop because BCl 3 and HF could not etch the underlying W film. W ALE was performed using a three-step "oxidation-conversion-fluorination" mechanism. In this ABC exposure sequence, the W surface is first oxidized to a WO 3 layer using O 2 /O 3 . Subsequently, the WO 3 layer is etched with BCl 3 and HF. SE could simultaneously monitor the W and WO 3 thicknesses and conversion of W to WO 3 . SE measurements showed that the W film thickness decreased linearly with number of ABC reaction cycles. W ALE was shown to be self-limiting with respect to each reaction in the ABC process. The etch rate for W ALE was ∼2.5 Å/cycle at 207 °C. An oxide thickness of ∼20 Å remained after W ALE, but could be removed by sequential BCl 3 and HF exposures without affecting the W layer. These new etching mechanisms will enable the thermal ALE of a variety of additional metal materials including those that have volatile metal fluorides.

Formation of epitaxial Al 2O 3/NiAl(1 1 0) films: aluminium deposition

NASA Astrophysics Data System (ADS)

Lykhach, Y.; Moroz, V.; Yoshitake, M.

2005-02-01

Structure of epitaxial Al 2O 3 layers formed on NiAl(1 1 0) substrates has been studied by means of reflection high-energy electron diffraction (RHEED). The elucidated structure was compared to the model suggested for 0.5 nm-thick Al 2O 3 layers [K. Müller, H. Lindner, D.M. Zehner, G. Ownby, Verh. Dtsch. Phys. Ges. 25 (1990) 1130; R.M. Jaeger, H. Kuhlenbeck, H.J. Freund, Surf. Sci. 259 (1991) 235]. The stepwise growth of Al 2O 3 film, involving deposition and subsequent oxidation of aluminium onto epitaxial 0.5 nm-thick Al 2O 3 layers, has been investigated. Aluminium was deposited at room temperature, whereas its oxidation took place during annealing at 1070 K. The Al 2O 3 thickness was monitored by means of Auger electron spectroscopy (AES). It was found that Al 2O 3 layer follows the structure of 0.5 nm thick Al 2O 3 film, although a tilting of Al 2O 3(1 1 1) surface plane with respect to NiAl(1 1 0) surface appeared after Al deposition.

MAO-derived hydroxyapatite/TiO2 nanostructured multi-layer coatings on titanium substrate

NASA Astrophysics Data System (ADS)

Abbasi, S.; Golestani-Fard, F.; Rezaie, H. R.; Mirhosseini, S. M. M.

2012-11-01

In this study, titanium substrates which previously oxidized through Micro arc oxidation method, was coated by Hydroxyapatite (HAp) coating once more by means of the same method. Morphology, topography and chemical properties as well as phase composition and thickness of layers were studied to reveal the effect of the electrolyte concentration on coating features. According to results, the obtained coatings are consisted of HAp and titania as the major phases along with minor amounts of calcium titanate and α-tri calcium phosphate. Ca and P are present on surface of obtained layers as well as predictable Ti and O based on the XPS results. Thickness profile of coatings figured out that by increasing the electrolyte concentration, especially by addition of more Calcium Acetate (CA) to electrolyte, the thickness of HAp layer would rise, consequently. However, the influence of coating time on thickness of obtained coatings would be more considerable than electrolyte concentration. High specific area coatings with nest morphology were obtained in Electrolyte containing 5 g/L β-Glycero Phosphate (β-GP) and 5 g/L CA. Increasing coating duration time in this kind of coatings would cause deduction of the nesting in their structure.

Mechanical Properties of Degraded PMR-15 Resin

NASA Technical Reports Server (NTRS)

Tsuji, Luis C.

2000-01-01

Thermo-oxidative aging produces a nonuniform degradation state in PMR-15 resin. A surface layer, usually attributed to oxidative degradation, forms. This surface layer has different properties from the inner material. A set of material tests was designed to separate the properties of the oxidized surface layer from the properties of interior material. Test specimens were aged at 316 C in either air or nitrogen, for durations of up to 800 hr. The thickness of the oxidized surface layer in air aged specimens, and the shrinkage and coefficient of thermal expansion (CTE) of nitrogen aged specimens were measured directly. The nitrogen-aged specimens were assumed to have the same properties as the interior material in the air-aged specimens. Four-point-bend tests were performed to determine modulus of both the oxidized surface layer and the interior material. Bimaterial strip specimens consisting of oxidized surface material and unoxidized interior material were constructed and used to determine surface layer shrinkage and CTE. Results confirm that the surface layer and core materials have substantially different properties.

A SONOS device with a separated charge trapping layer for improvement of charge injection

NASA Astrophysics Data System (ADS)

Ahn, Jae-Hyuk; Moon, Dong-Il; Ko, Seung-Won; Kim, Chang-Hoon; Kim, Jee-Yeon; Kim, Moon-Seok; Seol, Myeong-Lok; Moon, Joon-Bae; Choi, Ji-Min; Oh, Jae-Sub; Choi, Sung-Jin; Choi, Yang-Kyu

2017-03-01

A charge trapping layer that is separated from the primary gate dielectric is implemented on a FinFET SONOS structure. By virtue of the reduced effective oxide thickness of the primary gate dielectric, a strong gate-to-channel coupling is obtained and thus short-channel effects in the proposed device are effectively suppressed. Moreover, a high program/erase speed and a large shift in the threshold voltage are achieved due to the improved charge injection by the reduced effective oxide thickness. The proposed structure has potential for use in high speed flash memory.

Wide-angle light-trapping electrode for photovoltaic cells.

PubMed

Omelyanovich, Mikhail M; Simovski, Constantin R

2017-10-01

In this Letter, we experimentally show that a submicron layer of a transparent conducting oxide that may serve a top electrode of a photovoltaic cell based on amorphous silicon when properly patterned by notches becomes an efficient light-trapping structure. This is so for amorphous silicon thin-film solar cells with properly chosen thicknesses of the active layers (p-i-n structure with optimal thicknesses of intrinsic and doped layers). The nanopatterned layer of transparent conducting oxide reduces both the light reflectance from the photovoltaic cell and transmittance through the photovoltaic layers for normal incidence and for all incidence angles. We explain the physical mechanism of our light-trapping effect, prove that this mechanism is realized in our structure, and show that the nanopatterning is achievable in a rather easy and affordable way that makes our method of solar cell enhancement attractive for industrial adaptations.

A comparative study of the influence of nickel oxide layer on the FTO surface of organic light emitting diode

NASA Astrophysics Data System (ADS)

Saikia, Dhrubajyoti; Sarma, Ranjit

2018-03-01

The influence of thin layer of nickel oxide (NiO) over the fluorine-doped tin oxide (FTO) surface on the performance of Organic light-emitting diode (OLED) is reported. With an optimal thickness of NiO (10 nm), the luminance efficiency is found to be increased as compared to the single FTO OLED. The performance of OLED is studied by depositing NiO films at different thicknesses on the FTO surface and analyzed their J-V and L-V characteristics. Further analysis is carried out by measuring sheet resistance and optical transmittance. The surface morphology is studied with the help of FE-SEM images. Our results indicate that NiO (10 nm) buffer layer is an excellent choice to increase the efficiency of FTO based OLED devices within the charge tunneling region. The maximum value of current efficiency is found to be 7.32 Cd/A.

Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect Transistors.

PubMed

Mao, Ling-Feng; Ning, Huansheng; Li, Xijun

2015-12-01

We report theoretical study of the effects of energy relaxation on the tunneling current through the oxide layer of a two-dimensional graphene field-effect transistor. In the channel, when three-dimensional electron thermal motion is considered in the Schrödinger equation, the gate leakage current at a given oxide field largely increases with the channel electric field, electron mobility, and energy relaxation time of electrons. Such an increase can be especially significant when the channel electric field is larger than 1 kV/cm. Numerical calculations show that the relative increment of the tunneling current through the gate oxide will decrease with increasing the thickness of oxide layer when the oxide is a few nanometers thick. This highlights that energy relaxation effect needs to be considered in modeling graphene transistors.

Novel Layered Supercell Structure from Bi 2AlMnO 6 for Multifunctionalities

DOE PAGES

Li, Leigang; Boullay, Philippe; Lu, Ping; ...

2017-10-02

Layered materials, e.g., graphene and transition metal (di)chalcogenides, holding great promises in nanoscale device applications have been extensively studied in fundamental chemistry, solid state physics and materials research areas. In parallel, layered oxides (e.g., Aurivillius and Ruddlesden–Popper phases) present an attractive class of materials both because of their rich physics behind and potential device applications. In this work, we report a novel layered oxide material with self-assembled layered supercell structure consisting of two mismatch-layered sublattices of [Bi 3O 3+δ] and [MO 2] 1.84 (M = Al/Mn, simply named BAMO), i.e., alternative layered stacking of two mutually incommensurate sublattices made ofmore » a three-layer-thick Bi–O slab and a one-layer-thick Al/Mn–O octahedra slab in the out-of-plane direction. Strong room-temperature ferromagnetic and piezoelectric responses as well as anisotropic optical property have been demonstrated with great potentials in various device applications. Furthermore, the realization of the novel BAMO layered supercell structure in this work has paved an avenue toward exploring and designing new materials with multifunctionalities.« less

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

NASA Astrophysics Data System (ADS)

Xin, Zheng; Ling, Zhi Peng; Nandakumar, Naomi; Kaur, Gurleen; Ke, Cangming; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf

2017-08-01

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density D it(E) and the total interface charge Q tot. Furthermore, the bonding configuration variation of the AlO x films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlO x tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlO x layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.

Steam assisted oxide growth on aluminium alloys using oxidative chemistries: Part I Microstructural investigation

NASA Astrophysics Data System (ADS)

Din, Rameez Ud; Piotrowska, Kamila; Gudla, Visweswara Chakravarthy; Jellesen, Morten Stendahl; Ambat, Rajan

2015-11-01

The surface treatment of aluminium alloys under steam containing KMnO4 and HNO3 resulted in the formation of an oxide layer having a thickness of up to 825 nm. The use of KMnO4 and HNO3 in the steam resulted in incorporation of the respective chemical species into the oxide layer. Steam treatment with solution containing HNO3 caused dissolution of Cu and Si from the intermetallic particles in the aluminium substrate. The growth rate of oxide layer was observed to be a function of MnO4- and NO3- ions present in the aqueous solution. The NO3- ions exhibit higher affinity towards the intermetallic particles resulting in poor coverage by the steam generated oxide layer compared to the coating formed using MnO4- ions. Further, increase in the concentration of NO3- ions in the solution retards precipitation of the steam generated aluminium hydroxide layer.

Emissivity model of steel 430 during the growth of oxide layer at 800-1100 K and 1.5 μm

NASA Astrophysics Data System (ADS)

Xing, Wei; Shi, Deheng; Sun, Jinfeng; Zhu, Zunlue

2018-01-01

This work studied the variation in spectral emissivity with growth of oxide layer at the different temperatures. For this reason, we measured the normal spectral emissivity during the growth of oxide layer on the sample surface at a wavelength of 1.5 μm over a temperature range 800-1100 K. In the experiment, the temperature was measured by the two thermocouples, which were symmetrically welded onto the front surface of specimens. The average of their readings was regarded as the true temperature. The detector should be perpendicular to the specimen surface as accurately as possible. The variation in spectral emissivity with growth of oxide layer was evaluated at a certain temperature. Altogether 11 emissivity models were evaluated. The conclusion was gained that the more the number of parameters used in the models was, the better the fitting accuracy became. On the whole, all the PEE models, the four-parameter LEE model and the five-parameter PFE, PLE and LEE models could be employed to well fit this kind of variation. The variation in spectral emissivity with temperature was determined at a certain thickness of oxide film. Almost all the models studied in this paper could be used to accurately evaluate this variation. The approximate models of spectral emissivity as a function of temperature and oxide-layer thickness were proposed. The strong oscillations of spectral emissivity were observed, which were affirmed to arise from the interference effect between the two radiations stemming from the oxide layer and from the substrate. The uncertainties in the temperature of steel 430 generated only by the surface oxidization were approximately 4.1-10.7 K in this experiment.

Efficient methylammonium lead iodide perovskite solar cells with active layers from 300 to 900 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Momblona, C.; Malinkiewicz, O.; Soriano, A.

2014-08-01

Efficient methylammonium lead iodide perovskite-based solar cells have been prepared in which the perovskite layer is sandwiched in between two organic charge transporting layers that block holes and electrons, respectively. This configuration leads to stable and reproducible devices that do not suffer from strong hysteresis effects and when optimized lead to efficiencies close to 15%. The perovskite layer is formed by using a dual-source thermal evaporation method, whereas the organic layers are processed from solution. The dual-source thermal evaporation method leads to smooth films and allows for high precision thickness variations. Devices were prepared with perovskite layer thicknesses ranging frommore » 160 to 900 nm. The short-circuit current observed for these devices increased with increasing perovskite layer thickness. The main parameter that decreases with increasing perovskite layer thickness is the fill factor and as a result optimum device performance is obtained for perovskite layer thickness around 300 nm. However, here we demonstrate that with a slightly oxidized electron blocking layer the fill factor for the solar cells with a perovskite layer thickness of 900 nm increases to the same values as for the devices with thin perovskite layers. As a result the power conversion efficiencies for the cells with 300 and 900 nm are very similar, 12.7% and 12%, respectively.« less

Interfacial layers in high-temperature-oxidized NiCrAl

NASA Technical Reports Server (NTRS)

Larson, L. A.; Browning, R.; Poppa, H.; Smialek, J.

1983-01-01

The utility of Auger electron spectroscopy combined with ball cratering for depth analysis of oxide and diffusion layers produced in a Ni-14Cr-24Al alloy by oxidation in air at 1180 C for 25 hr is demonstrated. During postoxidation cooling, the oxide layers formed by this alloy spalled profusely. The remaining very thin oxide was primarily Cr2O3 with a trace of Ni. The underlying metal substrate exhibited gamma/gamma-prime and beta phases with a metallic interfacial layer which was similar to the bulk gamma/gamma-prime phase but slightly enriched in Cr and Al. These data are compared to electron microprobe results from a nominally identical alloy. The diffusion layer thickness is modelled with a simple mass balance equation and compared to recent results on the diffusion process in NiCrAl alloys.

Nano-scale zirconia and hafnia dielectrics grown by atomic layer deposition: Crystallinity, interface structures and electrical properties

NASA Astrophysics Data System (ADS)

Kim, Hyoungsub

With the continued scaling of transistors, leakage current densities across the SiO2 gate dielectric have increased enormously through direct tunneling. Presently, metal oxides having higher dielectric constants than SiO2 are being investigated to reduce the leakage current by increasing the physical thickness of the dielectric. Many possible techniques exist for depositing high-kappa gate dielectrics. Atomic layer deposition (ALD) has drawn attention as a method for preparing ultrathin metal oxide layers with excellent electrical characteristics and near-perfect film conformality due to the layer-by-layer nature of the deposition mechanism. For this research, an ALD system using ZrCl4/HfCl4 and H2O was built and optimized. The microstructural and electrical properties of ALD-ZrO2 and HfO2 grown on SiO2/Si substrates were investigated and compared using various characterization tools. In particular, the crystallization kinetics of amorphous ALD-HfO2 films were studied using in-situ annealing experiments in a TEM. The effect of crystallization on the electrical properties of ALD-HfO 2 was also investigated using various in-situ and ex-situ post-deposition anneals. Our results revealed that crystallization had little effect on the magnitude of the gate leakage current or on the conduction mechanisms. Building upon the results for each metal oxide separately, more advanced investigations were made. Several nanolaminate structures using ZrO2 and HfO2 with different sequences and layer thicknesses were characterized. The effects of the starting microstructure on the microstructural evolution of nanolaminate stacks were studied. Additionally, a promising new approach for engineering the thickness of the SiO2-based interface layer between the metal oxide and silicon substrate after deposition of the metal oxide layer was suggested. Through experimental measurements and thermodynamic analysis, it is shown that a Ti overlayer, which exhibits a high oxygen solubility, can effectively getter oxygen from the interface layer, thus decomposing SiO2 and reducing the interface layer thickness in a controllable fashion. As one of several possible applications, ALD-ZrO2 and HfO 2 gate dielectric films were deposited on Ge (001) substrates with different surface passivations. After extensive characterization using various microstructural, electrical, and chemical analyses, excellent MOS electrical properties of high-kappa gate dielectrics on Ge were successfully demonstrated with optimized surface nitridation of the Ge substrates.

Crystallization of silicon-germanium by aluminum-induced layer exchange

NASA Astrophysics Data System (ADS)

Isomura, Masao; Yajima, Masahiro; Nakamura, Isao

2018-02-01

We have studied the crystallization of amorphous silicon-germanium (a-SiGe) by aluminum (Al)-induced layer exchange (ALILE) with a starting structure of glass/Al/Al oxide/a-SiGe. We examined ALILE at 450 °C, which is slightly higher than the eutectic temperature of Ge and Al, in order to shorten the ALILE time. We successfully produced c-SiGe films oriented in the (111) direction for 16 h without significant alloying. The thickness of Al layers should be 2800 Å or more to complete the ALILE for the a-SiGe layers of 2000-2800 Å thickness. When the Al layer is as thick as the a-SiGe layer, almost uniform c-SiGe is formed on the glass substrate. On the other hand, the islands of c-SiGe are formed on the glass substrate when the Al layer is thicker than the a-SiGe layer. The islands become smaller with thicker Al layers because more excess Al remains between the SiGe islands. The results indicate that the configuration of c-SiGe can be altered from a uniform structure to island structures of various sizes by changing the ratio of a-SiGe thickness to Al thickness.

Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

NASA Astrophysics Data System (ADS)

Muthusubramanian, N.; Galan, E.; Maity, C.; Eelkema, R.; Grozema, F. C.; van der Zant, H. S. J.

2016-07-01

We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al2O3 thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10-4 G0 (1 G0 = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were used to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.

Effect of surface oxidation on thermomechanical behavior of NiTi shape memory alloy wire

NASA Astrophysics Data System (ADS)

Ng, Ching Wei; Mahmud, Abdus Samad

2017-12-01

Nickel titanium (NiTi) alloy is a unique alloy that exhibits special behavior that recovers fully its shape after being deformed to beyond elastic region. However, this alloy is sensitive to any changes of its composition and introduction of inclusion in its matrix. Heat treatment of NiTi shape memory alloy to above 600 °C leads to the formation of the titanium oxide (TiO2) layer. Titanium oxide is a ceramic material that does not exhibit shape memory behaviors and possess different mechanical properties than that of NiTi alloy, thus disturbs the shape memory behavior of the alloy. In this work, the effect of formation of TiO2 surface oxide layer towards the thermal phase transformation and stress-induced deformation behaviors of the NiTi alloy were studied. The NiTi wire with composition of Ti-50.6 at% Ni was subjected to thermal oxidation at 600 °C to 900 °C for 30 and 60 minutes. The formation of the surface oxide layers was characterized by using the Scanning Electron Microscope (SEM). The effect of surface oxide layers with different thickness towards the thermal phase transformation behavior was studied by using the Differential Scanning Calorimeter (DSC). The effect of surface oxidation towards the stress-induced deformation behavior was studied through the tensile deformation test. The stress-induced deformation behavior and the shape memory recovery of the NiTi wire under tensile deformation were found to be affected marginally by the formation of thick TiO2 layer.

Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory.

PubMed

Wang, Xue-Feng; Tian, He; Zhao, Hai-Ming; Zhang, Tian-Yu; Mao, Wei-Quan; Qiao, Yan-Cong; Pang, Yu; Li, Yu-Xing; Yang, Yi; Ren, Tian-Ling

2018-01-01

Metal oxide-based resistive random access memory (RRAM) has attracted a lot of attention for its scalability, temperature robustness, and potential to achieve machine learning. However, a thick oxide layer results in relatively high program voltage while a thin one causes large leakage current and a small window. Owing to these fundamental limitations, by optimizing the oxide layer itself a novel interface engineering idea is proposed to reduce the programming voltage, increase the uniformity and on/off ratio. According to this idea, a molybdenum disulfide (MoS 2 )-palladium nanoparticles hybrid structure is used to engineer the oxide/electrode interface of hafnium oxide (HfO x )-based RRAM. Through its interface engineering, the set voltage can be greatly lowered (from -3.5 to -0.8 V) with better uniformity under a relatively thick HfO x layer (≈15 nm), and a 30 times improvement of the memory window can be obtained. Moreover, due to the atomic thickness of MoS 2 film and high transmittance of ITO, the proposed RRAM exhibits high transparency in visible light. As the proposed interface-engineering RRAM exhibits good transparency, low SET voltage, and a large resistive switching window, it has huge potential in data storage in transparent circuits and wearable electronics with relatively low supply voltage. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Topotactical growth of thick perovskite oxynitride layers by nitridation of single crystalline oxides

NASA Astrophysics Data System (ADS)

Ebbinghaus, Stefan G.; Aguiar, Rosiana; Weidenkaff, Anke; Gsell, Stefan; Reller, Armin

2008-06-01

Thick films of the perovskite-related oxynitrides LaTiO 2N, NdTiO 2N, SrNbO 2N and SrTaO 2N were synthesised by nitridation of single crystals of the corresponding oxides with general composition ABO 3.5. The oxide crystals were obtained by optical floating zone growth. They correspond to n = 4 member of the A nB nO 3 n+2 family of layered perovskites and were reacted at temperatures between 900 °C and 1050 °C to form the oxynitrides. Electron probe microanalysis proved the presence of nitrogen in a surface layer of a few micrometer thickness. Cross-section SEM revealed additional thin stripes of oxynitride within the bulk of the crystals, indicating that nitrogen is incorporated preferably parallel to the perovskite-type layers, which in turn are connected in a zipper-type mechanism. The formation of the desired perovskite-type oxynitrides was confirmed by X-ray diffraction. Pole figure measurements proved an epitaxial orientation ABO 2N (110)[001] ‖ ABO 3.5 (001)[100]. The mosaicity of the oxynitrides both in polar and azimuthal direction was very small (<2°) indicating a nearly single crystalline quality of the surface layer. The nitridation of the crystals results in a dramatic change in colour. Optical spectroscopy revealed shifts of the absorption edge by more than 200 nm to longer wavelengths with respect to the parent oxides, corresponding to a reduction of the band gap energies by 1.4-1.8 eV.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Leigang; Boullay, Philippe; Lu, Ping

Layered materials, e.g., graphene and transition metal (di)chalcogenides, holding great promises in nanoscale device applications have been extensively studied in fundamental chemistry, solid state physics and materials research areas. In parallel, layered oxides (e.g., Aurivillius and Ruddlesden–Popper phases) present an attractive class of materials both because of their rich physics behind and potential device applications. In this work, we report a novel layered oxide material with self-assembled layered supercell structure consisting of two mismatch-layered sublattices of [Bi 3O 3+δ] and [MO 2] 1.84 (M = Al/Mn, simply named BAMO), i.e., alternative layered stacking of two mutually incommensurate sublattices made ofmore » a three-layer-thick Bi–O slab and a one-layer-thick Al/Mn–O octahedra slab in the out-of-plane direction. Strong room-temperature ferromagnetic and piezoelectric responses as well as anisotropic optical property have been demonstrated with great potentials in various device applications. Furthermore, the realization of the novel BAMO layered supercell structure in this work has paved an avenue toward exploring and designing new materials with multifunctionalities.« less

Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herz, A., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Franz, A.; Theska, F.

2016-03-15

Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO{sub 2} evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO{sub 3}) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to themore » presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO{sub 3} is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO{sub 3} nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.« less

Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography

DOEpatents

Montcalm, Claude; Stearns, Daniel G.; Vernon, Stephen P.

1999-01-01

A passivating overcoat bilayer is used for multilayer reflective coatings for extreme ultraviolet (EUV) or soft x-ray applications to prevent oxidation and corrosion of the multilayer coating, thereby improving the EUV optical performance. The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top layer of an elemental or a compound material that resists oxidation and corrosion. Materials for the top layer include carbon, palladium, carbides, borides, nitrides, and oxides. The thicknesses of the two layers that make up the overcoat bilayer are optimized to produce the highest reflectance at the wavelength range of operation. Protective overcoat systems comprising three or more layers are also possible.

Effect of CrO3 Sealing Time on Anodized A12024-T3

NASA Astrophysics Data System (ADS)

Korda, Akhmad A.; Hidayat, R. Z.

2016-08-01

The effect of CrO3 sealing time on anodized aluminum alloy has been investigated. A1 2024-T3 were used as substrate. Anodizing was carried out using chromic acid. CrO3 sealing was conducted in CrO3 solution for 30, 60, 90, 120 and 150 minutes. As comparison, other specimens were also prepared as anodized and boiled water sealing. Thickness of the coating was observed by optical microscope. Anodized and sealing layer was analyzed by X- ray diffraction. The hardness of as anodized, boiled water sealing and CrO3 sealing were compared. The highest hardness is achieved by CrO3 sealed specimen and followed by boiled water sealing and as anodized specimens. The longer the processes of CrO3 sealing the higher layer thickness and therefore the higher hardness of the oxide layer. The best resistance to electrolyte penetration is achieved by the CrO3 sealed specimen followed by boiled water sealed and as anodized specimens. The higher thickness of oxide layer, the higher the resistance against electrolyte penetration.

Structural and crystal orientation analysis of Al-Si coating on Ni-based superalloy by means of EBSD technique

NASA Astrophysics Data System (ADS)

Muslimin, A. N.; Sugiarti, E.; Aritonang, T.; Purawiardi, R. I.; Desiati, R. D.

2018-03-01

Ni-based superalloy is widely used for high performance components in power generation turbine due to its excellent mechanical properties. However, Ni-based superalloy has low oxidation resistantance. Therefore, surface coating is required to improve oxidation resistance at high temperatures. Al-Si as a coting material was successfully co-deposited on Ni-based substrate by pack cementation method at 900 °C for about 4 hours. The oxidation test was carried out at high temperature of 1000 °C for 100 hours. Micro structural characterization and analysis on crystal orientation were perfomed by using Field Emission Scanning Electron Microscope (FE-SEM) and Electron Back Scatter Diffraction (EBSD) technique, respectively. The results showed that the coating layer with a homogenous layer and had a thickness of 53 μm consisting of β-NiAl with cubic structure and Ni2Al3 with hexagonal structure. TGO layer was developed after oxidation and had a thickness of about 5 μm consisting of α-Al2O3 and spinel NiCr2O4. The phase composition map and crystal orientation acquired by EBSD technique was also discussed both in TGO and coating layers.

Oscillatory noncollinear magnetism induced by interfacial charge transfer in superlattices composed of metallic oxides

DOE PAGES

Hoffman, Jason D.; Kirby, Brian J.; Kwon, Jihwan; ...

2016-11-22

Interfaces between correlated complex oxides are promising avenues to realize new forms of magnetism that arise as a result of charge transfer, proximity effects, and locally broken symmetries. We report on the discovery of a noncollinear magnetic structure in superlattices of the ferromagnetic metallic oxide La 2/3Sr 1/3MnO 3 (LSMO) and the correlated metal LaNiO 3 (LNO). The exchange interaction between LSMO layers is mediated by the intervening LNO, such that the angle between the magnetization of neighboring LSMO layers varies in an oscillatory manner with the thickness of the LNO layer. The magnetic field, temperature, and spacer thickness dependencemore » of the noncollinear structure are inconsistent with the bilinear and biquadratic interactions that are used to model the magnetic structure in conventional metallic multilayers. A model that couples the LSMO layers to a helical spin state within the LNO fits the observed behavior. We propose that the spin-helix results from the interaction between a spatially varying spin susceptibility within the LNO and interfacial charge transfer that creates localized Ni 2+ states. In conclusion, our work suggests a new approach to engineering noncollinear spin textures in metallic oxide heterostructures.« less

Self-Assembled Layered Supercell Structure of Bi2AlMnO6 with Strong Room-Temperature Multiferroic Properties.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Leigang; Boullay, Philippe; Lu, Ping

2017-02-01

Room-temperature (RT) multiferroics, possessing ferroelectricity and ferromagnetism simultaneously at RT, hold great promise in miniaturized devices including sensors, actuators, transducers, and multi-state memories. In this work, we report a novel 2D layered RT multiferroic system with self-assembled layered supercell structure consisting of two mismatch-layered sub-lattices of [Bi 3O 3+δ] and [MO 2] 1.84 (M=Al/Mn, simply named as BAMO), i.e., alternative layered stacking of two mutually incommensurate sublattices made of a three-layer-thick Bi-O slab and a one-layer-thick Al/Mn-O octahedra slab along the out-of-plane direction. Strong room-temperature multiferroic responses, e.g., ferromagnetic and ferroelectric properties, have been demonstrated and attributed to the highlymore » anisotropic 2D nature of the non-ferromagnetic and ferromagnetic sublattices which are highly mismatched. The work demonstrates an alternative design approach for new 2D layered oxide materials that hold promises as single-phase multiferroics, 2D oxides with tunable bandgaps, and beyond.« less

Oxidation behaviour and electrical properties of cobalt/cerium oxide composite coatings for solid oxide fuel cell interconnects

NASA Astrophysics Data System (ADS)

Harthøj, Anders; Holt, Tobias; Møller, Per

2015-05-01

This work evaluates the performance of cobalt/cerium oxide (Co/CeO2) composite coatings and pure Co coatings to be used for solid oxide fuel cell (SOFC) interconnects. The coatings are electroplated on the ferritic stainless steels Crofer 22 APU and Crofer 22H. Coated and uncoated samples are exposed in air at 800 °C for 3000 h and oxidation rates are measured and oxide scale microstructures are investigated. Area-specific resistances (ASR) in air at 850 °C of coated and uncoated samples are also measured. A dual layered oxide scale formed on all coated samples. The outer layer consisted of Co, Mn, Fe and Cr oxide and the inner layer consisted of Cr oxide. The CeO2 was present as discrete particles in the outer oxide layer after exposure. The Cr oxide layer thicknesses and oxidations rates were significantly reduced for Co/CeO2 coated samples compared to for Co coated and uncoated samples. The ASR of all Crofer 22H samples increased significantly faster than of Crofer 22 APU samples which was likely due to the presence of SiO2 in the oxide/metal interface of Crofer 22H.

The growth of protective ultra-thin alumina layers on γ-TiAl(1 1 1) intermetallic single-crystal surfaces

NASA Astrophysics Data System (ADS)

Maurice, V.; Despert, G.; Zanna, S.; Josso, P.; Bacos, M.-P.; Marcus, P.

2005-12-01

An XPS and AES study of the early stages of oxidation of γ-TiAl(1 1 1) surfaces at 650 °C under 1.0 × 10 -7-1.0 × 10 -6 mbar O 2 is reported. The data evidence a first regime of oxidation characterized by the growth of a pure alumina layer followed by a second regime of simultaneous oxidation of both alloying elements. In the first regime, continuous alumina layers from ˜0.4 to ˜1.5 nm thick have been observed by angle-resolved XPS. The composition of the metallic phase underneath the growing oxide is modified by a depletion of Al and the injection of Al vacancies in the metal during the growth of the transient alumina formed at 650 °C. The onset of Ti oxidation was repeatedly observed for a critical concentration in the modified region of the alloy underneath the alumina layer: Ti 75±2Al 25±2 (Ti 50Al 17±2V(Al) 33±2), showing that decreasing the number of Ti-Al bonds in the modified intermetallic region increases the activity of Ti up to a critical point where its oxidation at the oxide/metal interface becomes competitive with that of Al. The growth of Ti 3+ and Ti 4+ oxide particles observed above the alumina layer by angle-resolved XPS indicates the transport of titanium cations trough the alumina layer and their subsequent reaction with oxygen at the outer gas/oxide interface. Improving structural ordering in the intermetallic phase slows down the growth kinetics of the alumina layer and the related Al-depletion of the substrate, and increases the resistance of the alloy to the subsequent oxidation of Ti. This is assigned to two combined effects: a slower diffusion of Al in the better ordered metallic phase and the growth of less defective alumina layers allowing to slow down the ionic transport through the oxide. Highly stable and corrosion resistant alloy surfaces covered by a 0.4 nm thick alumina layer have been obtained by slowly oxidizing the alloy at lower partial pressure (<5.0 × 10 -10 mbar O 2).

Fabrication of Pd Micro-Membrane Supported on Nano-Porous Anodized Aluminum Oxide for Hydrogen Separation.

PubMed

Kim, Taegyu

2015-08-01

In the present study, nano-porous anodized aluminum oxide (AAO) was used as a support of the Pd membrane. The AAO fabrication process consists of an electrochemical polishing, first/second anodizing, barrier layer dissolving and pores widening. The Pd membrane was deposited on the AAO support using an electroless plating with ethylenediaminetetraacetic acid (EDTA) as a plating agent. The AAO had the regular pore structure with the maximum pore diameter of ~100 nm so it had a large opening area but a small free standing area. The 2 µm-thick Pd layer was obtained by the electroless plating for 3 hours. The Pd layer thickness increased with increasing the plating time. However, the thickness was limited to ~5 µm in maximum. The H2 permeation flux was 0.454 mol/m2-s when the pressure difference of 66.36 kPa0.5 was applied at the Pd membrane under 400 °C.

Jellyfish-like few-layer graphene nanoflakes: Synthesis, oxidation, and hydrothermal N-doping

NASA Astrophysics Data System (ADS)

Chernyak, Sergei A.; Podgornova, Angelina M.; Arkhipova, Ekaterina A.; Novotortsev, Roman O.; Egorova, Tolganay B.; Ivanov, Anton S.; Maslakov, Konstantin I.; Savilov, Serguei V.; Lunin, Valery V.

2018-05-01

Few-layer graphene nanoflakes with the bent edges, diameter of 15-40 nm and thickness of 6-7 graphene layers have been synthesized using MgO-templated CVD growth. Their oxidation by nitric acid led to the high oxygen content of 18 at.%, a third of which was attributed to carboxylic groups. Oxidized nanoflakes were post-doped by nitrogen groups using hydrothermal treatment at 220 °C with ammonia and urea water solutions resulting in corresponding nitrogen content of 7 and 5 at.%. Synthesized and treated materials were characterized by XPS, Raman spectroscopy and electron microscopy.

Silver/oxygen depth profile in coins by using laser ablation, mass quadrupole spectrometer and X-rays fluorescence

NASA Astrophysics Data System (ADS)

Cutroneo, M.; Torrisi, L.; Caridi, F.; Sayed, R.; Gentile, C.; Mondio, G.; Serafino, T.; Castrizio, E. D.

2013-05-01

Silver coins belonging to different historical periods were investigated to determine the Ag/O atomic ratio depth profiles. Laser ablation has been employed to remove, in high vacuum, the first superficial layers of the coins. Mass quadrupole spectrometry has been used to detect the Ag and the O atomic elements vaporized from the coin surface. The depth profile allowed to determine the thickness of the oxidation layer indicating that, in general, it is high in old coins. A complementary technique, using scanning electron microscope and the associated XRF microprobe, have been devoted to confirm the measurements of Ag/O atomic ratio measured with the laser-coupled mass spectrometry. The oxidation layer thicknesses range between about 25 and 250 microns.

Effect of Layer Thickness in Selective Laser Melting on Microstructure of Al/5 wt.%Fe2O3 Powder Consolidated Parts

PubMed Central

Hao, Liang

2014-01-01

In situ reaction was activated in the powder mixture of Al/5 wt.%Fe2O3 by using selective laser melting (SLM) to directly fabricate aluminium metal matrix composite parts. The microstructural characteristics of these in situ consolidated parts through SLM were investigated under the influence of thick powder bed, 75 μm layer thickness, and 50 μm layer thickness in various laser powers and scanning speeds. It was found that the layer thickness has a strong influence on microstructural outcome, mainly attributed to its impact on oxygen content of the matrix. Various microstructural features (such as granular, coralline-like, and particulate appearance) were observed depending on the layer thickness, laser power, and scanning speed. This was associated with various material combinations such as pure Al, Al-Fe intermetallics, and Al(-Fe) oxide phases formed after in situ reaction and laser rapid solidification. Uniformly distributed very fine particles could be consolidated in net-shape Al composite parts by using lower layer thickness, higher laser power, and lower scanning speed. The findings contribute to the new development of advanced net-shape manufacture of Al composites by combining SLM and in situ reaction process. PMID:24526879

CMUT Fabrication Based On A Thick Buried Oxide Layer.

PubMed

Kupnik, Mario; Vaithilingam, Srikant; Torashima, Kazutoshi; Wygant, Ira O; Khuri-Yakub, Butrus T

2010-10-01

We introduce a versatile fabrication process for direct wafer-bonded CMUTs. The objective is a flexible fabrication platform for single element transducers, 1D and 2D arrays, and reconfigurable arrays. The main process features are: A low number of litho masks (five for a fully populated 2D array); a simple fabrication sequence on standard MEMS tools without complicated wafer handling (carrier wafers); an improved device reliability; a wide design space in terms of operation frequency and geometric parameters (cell diameter, gap height, effective insulation layer thickness); and a continuous front face of the transducer (CMUT plate) that is connected to ground (shielding for good SNR and human safety in medical applications). All of this is achieved by connecting the hot electrodes individually through a thick buried oxide layer, i.e. from the handle layer of an SOI substrate to silicon electrodes located in each CMUT cell built in the device layer. Vertical insulation trenches are used to isolate these silicon electrodes from the rest of the substrate. Thus, the high electric field is only present where required - in the evacuated gap region of the device and not in the insulation layer of the post region. Array elements (1D and 2D) are simply defined be etching insulation trenches into the handle wafer of the SOI substrate.

CMUT Fabrication Based On A Thick Buried Oxide Layer

PubMed Central

Kupnik, Mario; Vaithilingam, Srikant; Torashima, Kazutoshi; Wygant, Ira O.; Khuri-Yakub, Butrus T.

2010-01-01

We introduce a versatile fabrication process for direct wafer-bonded CMUTs. The objective is a flexible fabrication platform for single element transducers, 1D and 2D arrays, and reconfigurable arrays. The main process features are: A low number of litho masks (five for a fully populated 2D array); a simple fabrication sequence on standard MEMS tools without complicated wafer handling (carrier wafers); an improved device reliability; a wide design space in terms of operation frequency and geometric parameters (cell diameter, gap height, effective insulation layer thickness); and a continuous front face of the transducer (CMUT plate) that is connected to ground (shielding for good SNR and human safety in medical applications). All of this is achieved by connecting the hot electrodes individually through a thick buried oxide layer, i.e. from the handle layer of an SOI substrate to silicon electrodes located in each CMUT cell built in the device layer. Vertical insulation trenches are used to isolate these silicon electrodes from the rest of the substrate. Thus, the high electric field is only present where required – in the evacuated gap region of the device and not in the insulation layer of the post region. Array elements (1D and 2D) are simply defined be etching insulation trenches into the handle wafer of the SOI substrate. PMID:22685377

Structure and nano-mechanical characteristics of surface oxide layers on a metallic glass.

PubMed

Caron, A; Qin, C L; Gu, L; González, S; Shluger, A; Fecht, H-J; Louzguine-Luzgin, D V; Inoue, A

2011-03-04

Owing to their low elastic moduli, high specific strength and excellent processing characteristics in the undercooled liquid state, metallic glasses are promising materials for applications in micromechanical systems. With miniaturization of metallic mechanical components down to the micrometer scale, the importance of a native oxide layer on a glass surface is increasing. In this work we use TEM and XPS to characterize the structure and properties of the native oxide layer grown on Ni(62)Nb(38) metallic glass and their evolution after annealing in air. The thickness of the oxide layer almost doubled after annealing. In both cases the oxide layer is amorphous and consists predominantly of Nb oxide. We investigate the friction behavior at low loads and in ambient conditions (i.e. at T = 295 K and 60% air humidity) of both as-cast and annealed samples by friction force microscopy. After annealing the friction coefficient is found to have significantly increased. We attribute this effect to the increase of the mechanical stability of the oxide layer upon annealing.

Structural changes in the nano-oxide layer with annealing in specular spin valves

NASA Astrophysics Data System (ADS)

Jang, S. H.; Kim, Y. W.; Kang, T.; Kim, H. J.; Kim, K. Y.

2003-05-01

We investigated microstructural changes in a nano-oxide layer (NOL) with annealing in specular spin valves (SVs) by cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In the SV annealed at high temperature of 400 °C, an increase in thickness and a local breakdown of the NOL were observed. This local coarsening of the NOL is closely related to the formation of Mn oxides in the oxide-rich part of the NOL through Mn diffusion. Thus, the chemical structure of the NOL changes to the structure with Mn oxide-rich content after annealing.

Perspective: Oxide molecular-beam epitaxy rocks!

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schlom, Darrell G., E-mail: schlom@cornell.edu

2015-06-01

Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2015-02-01

In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

TEM and AES investigations of the natural surface nano-oxide layer of an AISI 316L stainless steel microfibre.

PubMed

Ramachandran, Dhanya; Egoavil, Ricardo; Crabbe, Amandine; Hauffman, Tom; Abakumov, Artem; Verbeeck, Johan; Vandendael, Isabelle; Terryn, Herman; Schryvers, Dominique

2016-11-01

The chemical composition, nanostructure and electronic structure of nanosized oxide scales naturally formed on the surface of AISI 316L stainless steel microfibres used for strengthening of composite materials have been characterised using a combination of scanning and transmission electron microscopy with energy-dispersive X-ray, electron energy loss and Auger spectroscopy. The analysis reveals the presence of three sublayers within the total surface oxide scale of 5.0-6.7 nm thick: an outer oxide layer rich in a mixture of FeO.Fe 2 O 3 , an intermediate layer rich in Cr 2 O 3 with a mixture of FeO.Fe 2 O 3 and an inner oxide layer rich in nickel. © 2016 The Authors Journal of Microscopy © 2016 Royal Microscopical Society.

Chemical structure of interfaces

NASA Technical Reports Server (NTRS)

Grunthaner, F. J.

1985-01-01

The interfacial structure of silicon/dielectric and silicon/metal systems is particularly amenable to analysis using a combination of surface spectroscopies together with a variety of chemical structures of Si/SiO2, Si/SiO2Si3N4, Si/Si2N2O, Si/SiO2/Al, and Si/Native Oxide interfaces using high resolution (0.350 eV FWHM) X ray photoelectron spectroscopy. The general structure of these dielectric interfaces entails a monolayer chemical transition layer at the Si/dielectric boundary. Amorphous Si substrates show a wide variety of hydrogenated Si and Si(OH) sub x states that are not observed in thermal oxidation of single crystal material. Extended SiO2 layers greater than 8 A in thickness are shown to be stoichiometric SiO2, but to exhibit a wide variety of local network structures. In the nitrogen containing systems, an approach to stoichiometric oxynitride compounds with interesting impurity and electron trapping properties are seen. In native oxides, substantial topographical nonuniformity in oxide thickness and composition are found. Analysis of metal/oxide interfacial layers is accomplished by analytical removal of the Si substrate by UHV XeF2 dry etching methods.

Passivation on High Q Acoustic Strain Sensor for Accelerometer.

DTIC Science & Technology

1984-11-01

selection of passivation layers. Preliminary results indicated that V203 , (yttrium oxide ) and AIN (aluminum nitride) were the best materials for...thickness selection of passivation layers. Preliminary results indicated that Y203 (yttrium oxide ) and AIN (aluminum nitride) were the best materials...crystal, in this case a parabolic temperature characteristic. Several circuits were designed using varactor diode phase shifting networks. FOjcTl Ta tor

Development of Pinhole-Free Amorphous Aluminum Oxide Protective Layers for Biomedical Device Applications

PubMed Central

Litvinov, Julia; Wang, Yi-Ju; George, Jinnie; Chinwangso, Pawilai; Brankovic, Stanko; Willson, Richard C.; Litvinov, Dmitri

2013-01-01

This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures. PMID:23682201

Direct grafting of anti-fouling polyglycerol layers to steel and other technically relevant materials.

PubMed

Weber, Theresa; Bechthold, Maren; Winkler, Tobias; Dauselt, John; Terfort, Andreas

2013-11-01

Direct grafting of hyperbranched polyglycerol (PG) layers onto the oxide surfaces of steel, aluminum, and silicon has been achieved through surface-initiated polymerization of 2-hydroxymethyloxirane (glycidol). Optimization of the deposition conditions led to a protocol that employed N-methyl-2-pyrrolidone (NMP) as the solvent and temperatures of 100 and 140 °C, depending on the substrate material. In all cases, a linear growth of the PG layers could be attained, which allows for control of film thickness by altering the reaction time. At layer thicknesses >5 nm, the PG layers completely suppressed the adhesion of albumin, fibrinogen, and globulin. These layers were also at least 90% bio-repulsive for two bacteria strains, E. coli and Acinetobacter baylyi, with further improvement being observed when the PG film thickness was increased to 17 nm (up to 99.9% bio-repulsivity on silicon). Copyright © 2013 Elsevier B.V. All rights reserved.

Radiation hardening of MOS devices by boron. [for stabilizing gate threshold potential of field effect device

NASA Technical Reports Server (NTRS)

Danchenko, V. (Inventor)

1974-01-01

A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. The boron is introduced within a layer of the oxide of about 100 A-300 A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 to the 18th power atoms/cu cm. The technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations.

Cation Ordering within the Perovskite Block of a Six-layer Ruddlesden-Popper Oxide from Layer-by-layer Growth

NASA Astrophysics Data System (ADS)

Yan, Lei; Niu, H. J.; Rosseinsky, M. J.

2011-03-01

The (AO)(A BO3)n Ruddlesden-Popper structure is an archetypal complex oxide consisting of two distinct structural units, an (AO) rock salt layer separating an n-octahedra thick perovskite block. Conventional high-temperature oxide synthesis methods cannot access members with n > 3 , butlowtemperaturelayer - by - layerthinfilmmethodsallowthepreparationofmaterialswiththickerperovskiteblocks , exploitinghighsurfacemobilityandlatticematchingwiththesubstrate . Thispresentationdescribesthegrowthofann = 6 memberCaO / (ABO 3)n (ABO 3 : CaMnO 3 , La 0.67 Ca 0.33 MnO 3 orCa 0.85 Sm 0.15 MnO 3) epitaxialsinglecrystalfilmsonthe (001) SrTiO 3 substrates by pulsed laser deposition with the assistance of a reflection high energy electron diffraction (RHEED).

Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

DOEpatents

Sarin, V.K.

1991-07-30

A process is disclosed for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900--1500 C and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.

Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

DOEpatents

Sarin, Vinod K.

1991-01-01

A process for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900.degree.-1500.degree. C. and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.

Influence of thermal annealing on the bulk scattering in giant-magnetoresistance spin-valve with nano-oxide layers

NASA Astrophysics Data System (ADS)

Nam, Chunghee; Jang, Youngman; Lee, Ki-Su; Shim, Jungjin; Cho, B. K.

2006-04-01

Based upon a bulk scattering model, we investigated the variation of giant magnetoresistance (GMR) behavior after thermal annealing at Ta=250 °C as a function of the top free layer thickness of a GMR spin valve with nano-oxide layers (NOLs). It was found that the enhancement of GMR ratio after thermal annealing is explained qualitatively in terms of the increase of active GMR region in the free layer and, simultaneously, the increase of intrinsic spin-scattering ratio. These effects are likely due to the improved specular reflection at the well-formed interface of NOL. Furthermore, we developed a modified phenomenological model for sheet conductance change (ΔG) in terms of the top free layer thickness. This modified model was found to be useful in the quantitative analysis of the variation of the active GMR region and the intrinsic spin-scattering properties. The two physical parameters were found to change consistently with the effects of thermal annealing on NOL.

In situ study of electric field controlled ion transport in the Fe/BaTiO3 interface

NASA Astrophysics Data System (ADS)

Merkel, D. G.; Bessas, D.; Bazsó, G.; Jafari, A.; Rüffer, R.; Chumakov, A. I.; Khanh, N. Q.; Sajti, Sz; Celse, J.-P.; Nagy, D. L.

2018-01-01

Electric field controlled ion transport and interface formation of iron thin films on a BaTiO3 substrate have been investigated by in situ nuclear resonance scattering and x-ray reflectometry techniques. At early stage of deposition, an iron-II oxide interface layer was observed. The hyperfine parameters of the interface layer were found insensitive to the evaporated layer thickness. When an electric field was applied during growth, a 10 Å increase of the nonmagnetic/magnetic thickness threshold and an extended magnetic transition region was measured compared to the case where no field was applied. The interface layer was found stable under this threshold when further evaporation occurred, contrary to the magnetic layer where the magnitude and orientation of the hyperfine magnetic field vary continuously. The obtained results of the growth mechanism and of the electric field effect of the Fe/BTO system will allow the design of novel applications by creating custom oxide/metallic nanopatterns using laterally inhomogeneous electric fields during sample preparation.

Development of Plasma-Sprayed Molybdenum Carbide-Based Anode Layers with Various Metal Oxides for SOFC

NASA Astrophysics Data System (ADS)

Faisal, N. H.; Ahmed, R.; Katikaneni, S. P.; Souentie, S.; Goosen, M. F. A.

2015-12-01

Air plasma-sprayed (APS) coatings provide an ability to deposit a range of novel fuel cell materials at competitive costs. This work develops three separate types of composite anodes (Mo-Mo2C/Al2O3, Mo-Mo2C/ZrO2, Mo-Mo2C/TiO2) using a combination of APS process parameters on Hastelloy®X for application in intermediate temperature proton-conducting solid oxide fuel cells. Commercially available carbide of molybdenum powder catalyst (Mo-Mo2C) and three metal oxides (Al2O3, ZrO2, TiO2) was used to prepare three separate composite feedstock powders to fabricate three different anodes. Each of the modified composition anode feedstock powders included a stoichiometric weight ratio of 0.8:0.2. The coatings were characterized by scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction, nanoindentation, and conductivity. We report herein that three optimized anode layers of thicknesses between 200 and 300 µm and porosity as high as 20% for Mo-Mo2C/Al2O3 (250-µm thick) and Mo-Mo2C/TiO2 (300 µm thick) and 17% for Mo-Mo2C/ZrO2 (220-µm thick), controllable by a selection of the APS process parameters with no addition of sacrificial pore-forming material. The nanohardness results indicate the upper layers of the coatings have higher values than the subsurface layers in coatings with some effect of the deposition on the substrate. Mo-Mo2C/ZrO2 shows high electrical conductivity.

Optical models for radio-frequency-magnetron reactively sputtered AlN films

NASA Astrophysics Data System (ADS)

Easwarakhanthan, T.; Assouar, M. B.; Pigeat, P.; Alnot, P.

2005-10-01

The optical properties of aluminum nitrate (AlN) films reactively sputtered on Si substrates using radio-frequency (rf) magnetron have been studied in this work from multiwavelength spectroscopic ellipsometry (SE) measurements performed over the 290-615 nm wavelength range. The SE modeling carried out with care to adhere as much to the ellipsometric fitting qualities is also backed up with atomic force microscopy and x-ray-diffraction measurements taken on these films thus grown to nominal thicknesses from 40 to 150 nm under the same optimized experimental conditions. It follows that the model describing the optical properties of the thicker AlN films should consist at least in three layers on the Si substrate: an almost roughnessless smooth surface overlayer that is presumed essentially of Al2O3, a bulk AlN layer, and an AlN interface layer that has a refractive index dispersion falling in the range from 2.04 [312 nm] to 1.91 [615 nm] on the average and is fairly distinguishable from the slightly higher bulk layer index which drops correspondingly from 2.12 to 1.99. These index values imply that, beneath the partly or mostly oxidized surface AlN layer, the films comprise a polycrystalline-structured bulk AlN layer above a less-microstructurally-ordered interface layer that extends over 40-55 nm from the substrate among thicker films. This ellipsometric evidence indicating the existence of the interface layer is consistent with those interface layers confirmed through electron microscopy in some previous works. However, the ellipsometrically insufficient thinner AlN films may be only modeled with the surface layer and an AlN layer. The film surface oxide layer thickness varies between 5 and 15 nm among samples. The refractive index dispersions, the layer thicknesses, and the lateral thickness variation of the films are given and discussed regarding the optical constitution of these films and the ellipsometric validity of these parameters.

Improved Starting Materials for Back-Illuminated Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2009-01-01

An improved type of starting materials for the fabrication of silicon-based imaging integrated circuits that include back-illuminated photodetectors has been conceived, and a process for making these starting materials is undergoing development. These materials are intended to enable reductions in dark currents and increases in quantum efficiencies, relative to those of comparable imagers made from prior silicon-on-insulator (SOI) starting materials. Some background information is prerequisite to a meaningful description of the improved starting materials and process. A prior SOI starting material, depicted in the upper part the figure, includes: a) A device layer on the front side, typically between 2 and 20 m thick, made of p-doped silicon (that is, silicon lightly doped with an electron acceptor, which is typically boron); b) A buried oxide (BOX) layer (that is, a buried layer of oxidized silicon) between 0.2 and 0.5 m thick; and c) A silicon handle layer (also known as a handle wafer) on the back side, between about 600 and 650 m thick. After fabrication of the imager circuitry in and on the device layer, the handle wafer is etched away, the BOX layer acting as an etch stop. In subsequent operation of the imager, light enters from the back, through the BOX layer. The advantages of back illumination over front illumination have been discussed in prior NASA Tech Briefs articles.

Dependence of the optical constants and the performance in the SPREE gas measurement on the thickness of doped tin oxide over coatings

NASA Astrophysics Data System (ADS)

Fischer, D.; Hertwig, A.; Beck, U.; Negendank, D.; Lohse, V.; Kormunda, M.; Esser, N.

2017-11-01

In this study, thickness related changes of the optical properties of doped tin oxide were studied. Two different sets of samples were prepared. The first set was doped with iron or nickel on silicon substrate with thicknesses of 29-56 nm, the second was iron doped on gold/glass substrate with 1.6-6.3 nm. The optical constants were determined by using spectral ellipsometry (SE) followed by modelling of the dielectric function with an oscillator model using Gaussian peaks. The analysis of the optical constants shows a dependence of the refraction and the absorption on the thickness of the doped tin oxide coating. In addition to the tin oxide absorption in the UV, one additional absorption peak was found in the near-IR/red which is related to plasmonic effects due to the doping. This peak shifts from the near-IR to the red part of the visible spectrum and becomes stronger by reducing the thickness, probably due to the formation of metal nanoparticles in this layer. These results were found for two different sets of samples by using the same optical model. Afterwards the second sample set was tested in the Surface Plasmon Resonance Enhanced Ellipsometric (SPREE) gas measurement with CO gas. It was found that the thickness has significant influence on the sensitivity and thus the adsorption of the CO gas. By increasing the thickness from 1.6 nm to 5.1 nm, the sensing ability is enhanced due to a higher coverage of the surface with the over coating. This is explained by the high affinity of CO molecules to the incorporated Fe-nanoparticles in the tin oxide coating. By increasing the thickness further to 6.3 nm, the sensing ability drops because the layer disturbs the SPR sensing effect too much.

Suppression of Leakage Current of Metal-Insulator-Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer

NASA Astrophysics Data System (ADS)

Tonomura, Osamu; Miki, Hiroshi; Takeda, Ken-ichi

2011-10-01

An Al2O3/SiO buffer layer was incorporated in a metal-insulator-semiconductor (MIS) Ta2O5 capacitor for dynamic random access memory (DRAM) application. Al2O3 was chosen for the buffer layer owing to its high band offset against silicon and oxidation resistance against increase in effective oxide thickness (EOT). It was clarified that post-deposition annealing in nitrogen at 800 °C for 600 s increased the band offset between Al2O3 and the lower electrode and decreased leakage current by two orders of magnitude at 1 V. Furthermore, we predicted and experimentally confirmed that there was an optimized value of y in (Si3N4)y(SiO2)(1-y), which is 0.58, for minimizing the leakage current and EOT of SiON. To clarify the oxidation resistance and appropriate thickness of Al2O3, a TiN/Ta2O5/Al2O3/SiON/polycrystalline-silicon capacitor was fabricated. It was confirmed that the lower electrode was not oxidized during the crystallization annealing of Ta2O5. By setting the Al2O3 thickness to 3.4 nm, the leakage current is lowered below the required value with an EOT of 3.6 nm.

Heat-transport mechanisms in molecular building blocks of inorganic/organic hybrid superlattices

NASA Astrophysics Data System (ADS)

Giri, Ashutosh; Niemelä, Janne-Petteri; Tynell, Tommi; Gaskins, John T.; Donovan, Brian F.; Karppinen, Maarit; Hopkins, Patrick E.

2016-03-01

Nanomaterial interfaces and concomitant thermal resistances are generally considered as atomic-scale planes that scatter the fundamental energy carriers. Given that the nanoscale structural and chemical properties of solid interfaces can strongly influence this thermal boundary conductance, the ballistic and diffusive nature of phonon transport along with the corresponding phonon wavelengths can affect how energy is scattered and transmitted across an interfacial region between two materials. In hybrid composites composed of atomic layer building blocks of inorganic and organic constituents, the varying interaction between the phononic spectrum in the inorganic crystals and vibronic modes in the molecular films can provide a new avenue to manipulate the energy exchange between the fundamental vibrational energy carriers across interfaces. Here, we systematically study the heat transfer mechanisms in hybrid superlattices of atomic- and molecular-layer-grown zinc oxide and hydroquinone with varying thicknesses of the inorganic and organic layers in the superlattices. We demonstrate ballistic energy transfer of phonons in the zinc oxide that is limited by scattering at the zinc oxide/hydroquinone interface for superlattices with a single monolayer of hydroquinone separating the thicker inorganic layers. The concomitant thermal boundary conductance across the zinc oxide interfacial region approaches the maximal thermal boundary conductance of a zinc oxide phonon flux, indicative of the contribution of long wavelength vibrations across the aromatic molecular monolayers in transmitting energy across the interface. This transmission of energy across the molecular interface decreases considerably as the thickness of the organic layers are increased.

Screen-printed calcium-birnessite electrodes for water oxidation at neutral pH and an "electrochemical harriman series".

PubMed

Lee, Seung Y; González-Flores, Diego; Ohms, Jonas; Trost, Tim; Dau, Holger; Zaharieva, Ivelina; Kurz, Philipp

2014-12-01

A mild screen-printing method was developed to coat conductive oxide surfaces (here: fluorine-doped tin oxide) with micrometer-thick layers of presynthesized calcium manganese oxide (Ca-birnessite) particles. After optimization steps concerning the printing process and layer thickness, electrodes were obtained that could be used as corrosion-stable water-oxidizing anodes at pH 7 to yield current densities of 1 mA cm(-2) at an overpotential of less than 500 mV. Analyses of the electrode coatings of optimal thickness (≈10 μm) indicated that composition, oxide phase, and morphology of the synthetic Ca-birnessite particles were hardly affected by the screen-printing procedure. However, a more detailed analysis by X-ray absorption spectroscopy revealed small modifications of both the Mn redox state and the structure at the atomic level, which could affect functional properties such as proton conductivity. Furthermore, the versatile new screen-printing method was used for a comparative study of various transition-metal oxides concerning electrochemical water oxidation under "artificial leaf conditions" (neutral pH, fairly low overpotential and current density), for which a general activity ranking of RuO2 >Co3 O4 ≈(Ca)MnOx ≈NiO was observed. Within the group of screened manganese oxides, Ca-birnessite performed better than "Mn-only materials" such as Mn2 O3 and MnO2 . © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Interface roughness induced asymmetric magnetic property in sputter-deposited Co/CoO/Co exchange coupled trilayers

NASA Astrophysics Data System (ADS)

Wang, J.; Sannomiya, T.; Shi, J.; Nakamura, Y.

2012-04-01

The effect of interface roughness on magnetic properties of exchange coupled polycrystalline Co/CoO(tAF)/Co trilayers has been investigated by varying antiferromagnetic layer (CoO) thickness. It has been found that the upper CoO/Co interface becomes rougher with increasing CoO layer thickness, resulting in stronger exchange bias of the upper interface than the lower one. The interfacial exchange coupling is strengthened by the increase of defect-generated uncompensated antiferromagnetic spins; such spins form coupling with spins in the Co layer at the interface. As a result, the CoO layer thickness dependence of exchange bias is much enhanced for the upper Co layer. The transition from anisotropic magnetoresistance to isotropic magnetoresistance for the top Co layer has also been found. This could be attributed to the defects, probably partial thin oxide layers, between Co grains in the top Co layer that leads a switch from spin-orbit scattering related magnetoresistance to spin-dependent electron scattering dominated magnetoresistance.

Tubular solid oxide fuel cells with porous metal supports and ceramic interconnections

DOEpatents

Huang, Kevin [Export, PA; Ruka, Roswell J [Pittsburgh, PA

2012-05-08

An intermediate temperature solid oxide fuel cell structure capable of operating at from 600.degree. C. to 800.degree. C. having a very thin porous hollow elongated metallic support tube having a thickness from 0.10 mm to 1.0 mm, preferably 0.10 mm to 0.35 mm, a porosity of from 25 vol. % to 50 vol. % and a tensile strength from 700 GPa to 900 GPa, which metallic tube supports a reduced thickness air electrode having a thickness from 0.010 mm to 0.2 mm, a solid oxide electrolyte, a cermet fuel electrode, a ceramic interconnection and an electrically conductive cell to cell contact layer.

Perpendicular magnetic anisotropy in Mo/Co2FeAl0.5Si0.5/MgO/Mo multilayers with optimal Mo buffer layer thickness

NASA Astrophysics Data System (ADS)

Saravanan, L.; Raja, M. Manivel; Prabhu, D.; Pandiyarasan, V.; Ikeda, H.; Therese, H. A.

2018-05-01

Perpendicular Magnetic Anisotropy (PMA) was realized in as-deposited Mo(10)/Co2FeAl0.5Si0.5(CFAS)(3)/MgO(0.5)/Mo multilayer stacks with large perpendicular magnetic anisotropy energy (Keff). PMA of this multilayer is found to be strongly dependent on the thickness of the individual CFAS (tCFAS), Mo (tMo) and MgO (tMgO) layers and annealing temperatures. The interactions at the Mo/CFAS/MgO interfaces are critical to induce PMA and are tuned by the interfacial oxidation. The major contribution to PMA is due to iron oxide at the CFAS/MgO interface. X-ray diffraction (XRD) and infrared spectroscopic (FT-IR) studies further ascertain this. However, an adequate oxidation of MgO and the formation of (0 2 4) and (0 1 8) planes of α-Fe2O3 at the optimal Mo buffer layer thickness is mainly inducing PMA in Mo/CFAS/MgO/Mo stack. Microstructural changes in the films are observed by atomic force microscopy (AFM). X-ray photoelectron spectroscopy (XPS) demonstrates the oxidation of CFAS/MgO interface and the formation of Fe-O bonds confirming that the real origin of PMA in Mo/CFAS/MgO is due to hybridization of Fe (3dz2) and O (2pz) orbitals and the resulted spin-orbit interaction at their interface. The half-metallic nature CFAS with Mo layer exhibiting PMA can be a potential candidate as p-MTJs electrodes for the new generation spintronic devices.

Investigation on uric acid biosensor model for enzyme layer thickness for the application of arthritis disease diagnosis.

PubMed

Parthasarathy, P; Vivekanandan, S

2018-12-01

Uric acid biosensors for arthritis disease has been developed for the specific selection of uricase enzyme film thickness coated over the TiO 2 -CeO 2 nano-composite matrix is modelled mathematically. This model is purely based on R-diffusion conditions with irreversible first-order catalytic reactions. By arithmetical method, the impact of the thickness of enzyme layer on the current response of the biosensor was explored. This article displays a structure for choice of the enzyme layer thickness, guaranteeing the adequately stable sensitivity of a biosensor in a required extent of the maximal enzymatic rate. The numerical outcomes showed subjective and sensible quantitative information for oxidation current due to uric acid also shows the maximum change in the biosensor current response due to the change in membrane thickness, which will be more suitable for uric acid biosensor for the application of arthritis disease diagnosis.

Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers.

PubMed

Mehari, Shlomo; Cohen, Daniel A; Becerra, Daniel L; Nakamura, Shuji; DenBaars, Steven P

2018-01-22

The benefits of utilizing transparent conductive oxide on top of a thin p-GaN layer for continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low operating voltage of 5.35 V at 10 kA/cm 2 was obtained for LDs with 250 nm thick p-GaN compared to 7.3 V for LDs with conventional 650 nm thick p-GaN. An improved thermal performance was also observed for the thin p-GaN samples resulting in a 40% increase in peak light output power and a 32% decrease in surface temperature. Finally, a tradeoff was demonstrated between low operating voltage and increased optical modal loss in the indium tin oxide (ITO) with thinner p-GaN. LDs lasing at 445 nm with 150 nm thick p-GaN had an excess modal loss while LDs with an optimal 250 nm thick p-GaN resulted in optical output power of 1.1 W per facet without facet coatings and a wall-plug efficiency of 15%.

Synthesizing new types of ultrathin 2D metal oxide nanosheets via half-successive ion layer adsorption and reaction

NASA Astrophysics Data System (ADS)

Gao, Linjie; Li, Yaguang; Xiao, Mu; Wang, Shufang; Fu, Guangsheng; Wang, Lianzhou

2017-06-01

Two-dimensional (2D) metal oxide nanosheets have demonstrated their great potential in a broad range of applications. The existing synthesis strategies are mainly preparing 2D nanosheets from layered and specific transition metal oxides. How to prepare the other types of metal oxides as ultrathin 2D nanosheets remains unsolved, especially for metal oxides containing alkali, alkaline earth metal, and multiple metal elements. Herein, we developed a half-successive ion layer adsorption and reaction (SILAR) method, which could synthesize those types of metal oxides as ultrathin 2D nanosheets. The synthesized 2D metal oxides nanosheets are within 1 nm level thickness and 500 m2 · g-1 level surface area. This method allows us to develop many new types of ultrathin 2D metal oxides nanosheets that have never been prepared before.

The oxidation of Inconel-690 alloy at 600 K in air

NASA Astrophysics Data System (ADS)

Allen, G. C.; Dyke, J. M.; Harris, S. J.; Morris, A.

1988-03-01

The alloy Inconel-690 has been oxidised at 600 K in air for periods varying between 30 s and 120 h and the composition of the oxide layer formed examined by scanning Auger microscopy (SAM), scanning electron microscopy with energy dispersive analysis of X-rays (SEM/EDAX), secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). Analysis of the spectra revealed the formation of a layer of essentially α-Cr 2O 3 at room temperature. Oxidation at 600 K resulted in the formation of a duplex oxide film with a thin outer layer of iron(III) oxide. Beneath this was a mixed chromium, iron, nickel oxide. Following 8 h of oxidation at 600 K the oxide was approximately 10 nm thick but this was found to vary with the physical surface of the underlying alloy which also appeared to affect the relative rates of diffusion of the ionic species during film growth.

Micro-arc oxidation as a tool to develop multifunctional calcium-rich surfaces for dental implant applications.

PubMed

Ribeiro, A R; Oliveira, F; Boldrini, L C; Leite, P E; Falagan-Lotsch, P; Linhares, A B R; Zambuzzi, W F; Fragneaud, B; Campos, A P C; Gouvêa, C P; Archanjo, B S; Achete, C A; Marcantonio, E; Rocha, L A; Granjeiro, J M

2015-09-01

Titanium (Ti) is commonly used in dental implant applications. Surface modification strategies are being followed in last years in order to build Ti oxide-based surfaces that can fulfill, simultaneously, the following requirements: induced cell attachment and adhesion, while providing a superior corrosion and tribocorrosion performance. In this work micro-arc oxidation (MAO) was used as a tool for the growth of a nanostructured bioactive titanium oxide layer aimed to enhance cell attachment and adhesion for dental implant applications. Characterization of the surfaces was performed, in terms of morphology, topography, chemical composition and crystalline structure. Primary human osteoblast adhesion on the developed surfaces was investigated in detail by electronic and atomic force microscopy as well as immunocytochemistry. Also an investigation on the early cytokine production was performed. Results show that a relatively thick hybrid and graded oxide layer was produced on the Ti surface, being constituted by a mixture of anatase, rutile and amorphous phases where calcium (Ca) and phosphorous (P) were incorporated. An outermost nanometric-thick amorphous oxide layer rich in Ca was present in the film. This amorphous layer, rich in Ca, improved fibroblast viability and metabolic activity as well as osteoblast adhesion. High-resolution techniques allowed to understand that osteoblasts adhered less in the crystalline-rich regions while they preferentially adhere and spread over in the Ca-rich amorphous oxide layer. Also, these surfaces induce higher amounts of IFN-γ cytokine secretion, which is known to regulate inflammatory responses, bone microarchitecture as well as cytoskeleton reorganization and cellular spreading. These surfaces are promising in the context of dental implants, since they might lead to faster osseointegration. Copyright © 2015 Elsevier B.V. All rights reserved.

Tunable Transport Gap in Phosphorene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Saptarshi; Zhang, Wei; Demarteau, Marcel

2014-08-11

In this paper, we experimentally demonstrate that the transport gap of phosphorene can be tuned monotonically from ~0.3 to ~1.0 eV when the flake thickness is scaled down from bulk to a single layer. As a consequence, the ON current, the OFF current, and the current ON/OFF ratios of phosphorene field effect transistors (FETs) were found to be significantly impacted by the layer thickness. The transport gap was determined from the transfer characteristics of phosphorene FETs using a robust technique that has not been reported before. The detailed mathematical model is also provided. By scaling the thickness of the gatemore » oxide, we were also able to demonstrate enhanced ambipolar conduction in monolayer and few layer phosphorene FETs. The asymmetry of the electron and the hole current was found to be dependent on the layer thickness that can be explained by dynamic changes of the metal Fermi level with the energy band of phosphorene depending on the layer number. We also extracted the Schottky barrier heights for both the electron and the hole injection as a function of the layer thickness. In conclusion, we discuss the dependence of field effect hole mobility of phosphorene on temperature and carrier concentration.« less

Broader color gamut of color-modulating optical coating display based on indium tin oxide and phase change materials.

PubMed

Ni, Zhigang; Mou, Shenghong; Zhou, Tong; Cheng, Zhiyuan

2018-05-01

A color-modulating optical coating display based on phase change materials (PCM) and indium tin oxide (ITO) is fabricated and analyzed. We demonstrate that altering the thickness of top-ITO in this PCM-based display device can effectively change color. The significant role of the top-ITO layer in the thin-film interference in this multilayer system is confirmed by experiment as well as simulation. The ternary-color modulation of devices with only 5 nano thin layer of phase change material is achieved. Furthermore, simulation work demonstrates that a stirringly broader color gamut can be obtained by introducing the control of the top-ITO thickness.

Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muthusubramanian, N.; Zant, H. S. J. van der; Galan, E.

We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al{sub 2}O{sub 3} thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10{sup −4} G{sub 0} (1 G{sub 0} = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were usedmore » to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.« less

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

NASA Astrophysics Data System (ADS)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Experimental and Modeling Studies on the Microstructures and Properties of Oxidized Aluminum Nitride Ceramic Substrates

NASA Astrophysics Data System (ADS)

Cao, Ye; Xu, Haixian; Zhan, Jun; Zhang, Hao; Wei, Xin; Wang, Jianmin; Cui, Song; Tang, Wenming

2018-05-01

Oxidation of aluminum nitride (AlN) ceramic substrates doped with 2 wt.% Y2O3 was performed in air at temperatures ranging from 1000 to 1300 °C for various lengths of time. Microstructure, bending strength, and thermal conductivity of the oxidized AlN substrates were studied experimentally and also via mathematical models. The results show that the oxide layer formed on the AlN substrates is composed of α-Al2O3 nanocrystallines and interconnected micropores. Longitudinal and transverse cracks are induced in the oxide layer under tensile and shear stresses, respectively. Intergranular oxidation of the AlN grains close to the oxide layer/AlN interface also occurs, leading to widening and cracking of the AlN grain boundaries. These processes result in the monotonous degradation of bending strength and thermal conductivity of the oxidized AlN substrates. Two mathematic models concerning these properties of the oxidized AlN substrates versus the oxide layer thickness were put forward. They fit well with the experimental results.

Final Report For The Erosion And Corrosion Analysis Of Waste Transfer Primary Pipeline Sections From 241-SY Tank Farm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Page, J. S.; Wyrwas, R. B.; Cooke, G. A.

Three sections of primary transfer pipeline removed from the 241-SY Tank Farm in Hanford's 200 West area, labeled as SN-285, SN-286, and SN-278, were analyzed for the presence and amount of corrosion and erosion on the inside surface of the transfer pipe. All three sections of pipe, ranging in length between 6 and 8 in., were received at the 222-S Laboratory still in the pipe-in-pipe assembly. The annular spaces were filled with urethane foam injected into the pipes for as low as reasonably achievable (ALARA) purposes. The 3-in. primary transfer pipes were first separated from the outer encasement, 6-in. pipes.more » The pipes were cut into small sections, or coupons, based upon the results of a non-destructive pipe wall thickness measurement which used an ultrasonic transducer. Following removal of the foam, the coupons were subjected to a series of analytical methods utilizing both optical microscopy and scanning electron microscopy to obtain erosion and corrosion information. The ultrasonic transducer analysis of the SN-285 primary pipe did not show any thinned locations in the pipe wall which were outside the expected range for the 3-in. schedule 40 pipe of 216 mils. A coupon was cut from the thinnest area on the pipe, and analysis of the inside surface, which was in contact with the tank waste, revealed a continuous layer of corrosion ~ 100 11m (4 mils) thick under a semi-continuous layer of tank waste residue ~ 20 11m (1 mil) thick. This residue layer was composed of an amorphous phase rich in chromium, magnesium, calcium, and chlorine. Small pits were detected throughout the inside pipe surface with depths up to ~ 50 11m (2 mils). Similarly, the SN-286 primary pipe did not show, by the ultrasonic transducer measurements, any thinned locations in the pipe wall which were outside the expected range for this pipe. Analysis of the coupon cut from the pipe section showed the presence of a tank waste layer containing sodium aluminate and phases rich in iron, calcium, and chromium. This layer was removed by a cleaning process that left a pipe surface continuous in iron oxide/hydroxide (corrosion) with pockets of aluminum oxide, possibly gibbsite. The corrosion layer was ~ 50 11m (2 mil) thick over non-continuous pits less than ~ 50 11m deep (2 mils). Small particles of aluminum oxide were also detected under the corrosion layer. The ultrasonic transducer analysis of SN-278, like the previous primary pipes, did not reveal any noticeable thinning of the pipe wall. Analysis of the coupon cut from the pipe showed that the inside surface had a layer of tank waste residue that was partially detached from the pipe wall. This layer was easily scraped from the surface and was composed of two separate layers. The underlying layer was ~ 350 11m (14 mils) thick and composed of a cementation of small aluminum oxide (probably gibbsite) particles. A thinner layer on top of the aluminum oxide layer was rich in carbon and chlorine. Scattered pitting was observed on the inside pipe surface with one pit as deep as 200 11m (8 mils).« less

Comparative Study of Surface Chemical Composition and Oxide Layer Modification upon Oxygen Plasma Cleaning and Piranha Etching on a Novel Low Elastic Modulus Ti25Nb21Hf Alloy

NASA Astrophysics Data System (ADS)

Paredes, Virginia; Salvagni, Emiliano; Rodríguez-Castellón, Enrique; Manero, José María

2017-08-01

Metals are widely employed for many biological artificial replacements, and it is known that the quality and the physical/chemical properties of the surface are crucial for the success of the implant. Therefore, control over surface implant materials and their elastic moduli may be crucial to avoid undesired effects. In this study, surface modification upon cleaning and activation of a low elastic modulus Ti alloy (Ti25Hf21Nb) was investigated. Two different methods, oxygen plasma (OP) cleaning and piranha (PI) solution, were studied and compared. Both surface treatments were effective for organic contaminant removal and to increase the Ti-oxide layer thickness rather than other metal-oxides present at the surface, which is beneficial for biocompatibility of the material. Furthermore, both techniques drastically increased hydrophilicity and introduced oxidation and hydroxylation (OH)-functional groups at the surface that may be beneficial for further chemical modifications. However, these treatments did not alter the surface roughness and bulk material properties. The surfaces were fully characterized in terms of surface roughness, wettability, oxide layer composition, and hydroxyl surface density through analytical techniques (interferometry, X-ray photoelectron spectroscopy (XPS), contact angle, and zinc complexation). These findings provide essential information when planning surface modifications for cleanliness, oxide layer thickness, and surface hydroxyl density, as control over these factors is essential for many applications, especially in biomaterials.

Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement

NASA Astrophysics Data System (ADS)

Sant, S.; Mao, M.; Kools, J.; Koi, K.; Iwasaki, H.; Sahashi, M.

2001-06-01

Three different techniques, natural oxidation, remote plasma oxidation and low energy ion beam oxidation, have been proved to be equally effective in forming nano-oxide layers (NOLs) in spin-valve films for specular enhancement of giant magnetoresistance (GMR) effect. GMR values over 12% have been routinely obtained in spin-valve films with NOL, corresponding to a 30% specular enhancement over those without NOL. The consistency and robustness of the oxidation processes has been demonstrated by a very large GMR value ˜19% in a dual spin-valve film with the NOLs formed in both pinned layers, the oscillatory dependence of the interlayer coupling field on Cu layer thickness in specular enhanced spin-valve films and the uniform and repeatable film performance over 5 in. substrates.

Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors

NASA Astrophysics Data System (ADS)

Aleksandrova, P. V.; Gueorguiev, V. K.; Ivanov, Tz. E.; Kaschieva, S.

2006-08-01

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate oxide tunneling conduction and transistor characteristics were studied. At MeV dose of 6×1013 el/cm2, a negligible degradation of the transistor properties was found. A significant deterioration of the electrical properties of PSTFTs at MeV irradiation dose of 3×1014 el/cm2 was observed.

Does the conductivity of interconnect coatings matter for solid oxide fuel cell applications?

NASA Astrophysics Data System (ADS)

Goebel, Claudia; Fefekos, Alexander G.; Svensson, Jan-Erik; Froitzheim, Jan

2018-04-01

The present work aims to quantify the influence of typical interconnect coatings used for solid oxide fuel cells (SOFC) on area specific resistance (ASR). To quantify the effect of the coating, the dependency of coating thickness on the ASR is examined on Crofer 22 APU at 600 °C. Three different Co coating thicknesses are investigated, 600 nm, 1500 nm, and 3000 nm. Except for the reference samples, the material is pre-oxidized prior to coating to mitigate the outward diffusion of iron and consequent formation of poorly conducting (Co,Fe)3O4 spinel. Exposures are carried out at 600 °C in stagnant laboratory air for 500 h and subsequent ASR measurements are performed. Additionally the microstructure is investigated with scanning electron microscopy (SEM). On all pre-oxidized samples, a homogenous dense Co3O4 top layer is observed beneath which a thin layer of Cr2O3 is present. As the ASR values range between 7 and 12 mΩcm2 for all pre-oxidized samples, even though different Co3O4 thicknesses are observed, the results strongly suggest that for most applicable cases the impact of the coating on ASR is negligible and the main contributor is Cr2O3.

Silicon/HfO{sub 2} interface: Effects of gamma irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurya, Savita

2016-05-23

Quality of MOS devices is a strong function of substrate and oxide interface. In this work we have studied how gamma photon irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide deposited on silicon wafer. CV and GV measurements have been done for pristine and irradiated samples to quantify the effect of gamma photon irradiation. Gamma photon irradiation not only introduces positive charge in the oxide and at the interface of Si/HfO{sub 2} interface but also induce phase change of oxide layer. Maximum oxide capacitances are affected by gamma photon irradiation.

Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

NASA Astrophysics Data System (ADS)

Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

2017-08-01

Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

Hybrid calcium phosphate coatings for implants

NASA Astrophysics Data System (ADS)

Malchikhina, Alena I.; Shesterikov, Evgeny V.; Bolbasov, Evgeny N.; Ignatov, Viktor P.; Tverdokhlebov, Sergei I.

2016-08-01

Monophasic biomaterials cannot provide all the necessary functions of bones or other calcined tissues. It is necessary to create for cancer patients the multiphase materials with the structure and composition simulating the natural bone. Such materials are classified as hybrid, obtained by a combination of chemically different components. The paper presents the physical, chemical and biological studies of coatings produced by hybrid technologies (HT), which combine primer layer and calcium phosphate (CaP) coating. The first HT type combines the method of vacuum arc titanium primer layer deposition on a stainless steel substrate with the following micro-arc oxidation (MAO) in phosphoric acid solution with addition of calcium compounds to achieve high supersaturated state. MAO CaP coatings feature high porosity (2-8%, pore size 5-7 µm) and surface morphology with the thickness greater than 5 µm. The thickness of Ti primer layer is 5-40 µm. Amorphous MAO CaP coating micro-hardness was measured at maximum normal load Fmax = 300 mN. It was 3.1 ± 0.8 GPa, surface layer elasticity modulus E = 110 ± 20 GPa, roughness Ra = 0.9 ± 0.1 µm, Rz = 7.5 ± 0.2 µm, which is less than the titanium primer layer roughness. Hybrid MAO CaP coating is biocompatible, able to form calcium phosphates from supersaturated body fluid (SBF) solution and also stimulates osteoinduction processes. The second HT type includes the oxide layer formation by thermal oxidation and then CaP target radio frequency magnetron sputtering (RFMS). Oxide-RFMS CaP coating is a thin dense coating with good adhesion to the substrate material, which can be used for metal implants. The RFMS CaP coating has thickness 1.6 ± 0.1 µm and consists of main target elements calcium and phosphorus and Ca/P ratio 2.4. The second HT type can form calcium phosphates from SBF solution. In vivo study shows that hybrid RFMS CaP coating is biocompatible and produces fibrointegration processes.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

In-Situ Observation of Nano-Oxide Formation in Magnetic Thin Films

NASA Astrophysics Data System (ADS)

McCallum, Andrew; Russek, Stephen

2004-03-01

Exposure of a metal surface in a spin valve structure to oxygen creates a nano-oxide layer, or NOL, on that surface. Inclusion of NOLs into spin valve structures has been shown by many researchers to lower the resistance and increase the giant magnetoresistance effect. Four point in-situ conductance measurements were made during the deposition and oxidation of Co layers. These measurements show an initial decrease in conductance followed by an increase in conductance, due to a specularity increase of at least 0.10. RHEED measurements taken simultaneously with conductance measurements show the formation an amorphous oxide while the specularity increases. With further exposure of oxygen to the surface a CoO structure with a (111) texture forms. Magnetoconductance measurements during the oxidation of the free layer of bottom pinned spin valves show increases in the GMR of the spin valves. Estimates of the change in specularity and Co layer thickness were determined from the change in conductance and the change in magnetoconductance. Also determined from the magnetoconductance measurements was an increase in the coercivity of the free layer with oxidation. Adding Co onto the oxide had a strong effect on the coercivity and coupling between free and pinned layers.

Magnetic and electrical properties of FeSi/FeSi-ZrO 2 multilayers prepared by EB-PVD

NASA Astrophysics Data System (ADS)

Bi, Xiaofang; Lan, Weihua; Ou, Shengquan; Gong, Shengkai; Xu, Huibin

2003-04-01

FeSi/FeSi-ZrO 2 and FeSi/ZrO 2 multilayer materials were prepared by electron beam physical vapor deposition with the FeSi-ZrO 2 layer thickness about 0.6 μm, and their magnetic and electrical properties were studied as a function of FeSi layer thickness. With increasing FeSi layer thickness from 0.3 to 3 μm, the coercivity decreased from 0.92 to 0.31 kA/m and the saturation magnetization changed from 164 to 186 emu/g. The effect of the layer number on the magnetic properties was discussed in terms of interfacial mixing and oxidation. It was also discovered that the magnetic properties of the multilayer materials were affected by the spacer material, exhibiting higher saturation magnetization and lower coercivity for the FeSi/FeSi-ZrO 2 than those for the FeSi/ZrO 2 with the same individual layer thicknesses. This behavior could be explained by the weaker magnetic interaction between FeSi layers separated by the non-magnetic ZrO 2 layer. Furthermore, the electrical resistivity changed from 1850 to 1250 μΩ cm for the multilayer materials for the FeSi thickness increasing from 0.30 to 3 μm.

Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazlov, N., E-mail: n.bazlov@spbu.ru; Pilipenko, N., E-mail: nelly.pilipenko@gmail.com; Vyvenko, O.

2016-06-17

AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained trapsmore » of positive charges with concentration of about 4 × 10{sup 18} cm{sup −3}. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 10{sup 12} cm{sup −2}. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 10{sup 10} cm{sup −2} were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.« less

Oxidation and alpha-case formation in Ti–6Al–2Sn–4Zr–2Mo alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaddam, Raghuveer, E-mail: raghuveer.gaddam@ltu.se; Sefer, Birhan; Pederson, Robert

2015-01-15

Isothermal heat treatments in ambient air were performed on wrought Ti–6Al–2Sn–4Zr–2Mo (Ti-6242) material at 500, 593 and 700°C for times up to 500 h. In the presence of oxygen at elevated temperatures simultaneous reactions occurred in Ti-6242 alloy, which resulted in the formation of an oxide scale and a layer with higher oxygen concentration (termed as alpha-case). Total weight gain analysis showed that there was a transition in the oxidation kinetics. At 500°C, the oxidation kinetics obeyed a cubic relationship up to 200 h and thereafter changed to parabolic at prolonged exposure times. At 593°C, it followed a parabolic relationship.more » After heat treatment at 700°C, the oxidation obeyed a parabolic relationship up to 200 h and thereafter changed to linear at prolonged exposure times. The observed transition is believed to be due to the differences observed in the oxide scale. The activation energy for parabolic oxidation was estimated to be 157 kJ/mol. In addition, alpha-case layer was evaluated using optical microscope, electron probe micro-analyser and microhardness tester. The thickness of the alpha-case layer was found to be a function of temperature and time, increasing proportionally, and following a parabolic relationship. The activation energy for the formation of alpha-case layer was estimated to be 153 kJ/mol. - Highlights: • Transition in oxidation kinetics was observed in Ti–6Al–2Sn–4Zr–2Mo alloy in the temperature range 500–700°C. • The activation energy for parabolic oxidation and for alpha-case formation is about 157 kJ/mol and 153 kJ/mol. • Thickness of alpha-case layer estimated by optical microscopy and electron probe microanalysis is comparable.« less

Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

NASA Astrophysics Data System (ADS)

Li, Zhi-Yue; Yang, Hao-Zhi; Chen, Sheng-Chi; Lu, Ying-Bo; Xin, Yan-Qing; Yang, Tian-Lin; Sun, Hui

2018-05-01

Nitrogen-doped indium tin zinc oxide (ITZO:N) thin film transistors (TFTs) were deposited on SiO2 (200 nm)/p-Si〈1 0 0〉 substrates by RF magnetron sputtering at room temperature. The structural, chemical compositions, surface morphology, optical and electrical properties as a function of the active layer thickness were investigated. As the active layer thickness increases, Zn content decreases and In content increases gradually. Meanwhile, Sn content is almost unchanged. When the thickness of the active layer is more than 45 nm, the ITZO:N films become crystallized and present a crystal orientation along InN(0 0 2) plan. No matter what the thickness is, ITZO:N films always display a high transmittance above 80% in the visible region. Their optical band gaps fluctuate between 3.4 eV and 3.62 eV. Due to the dominance of low interface trap density and high carrier concentration, ITZO:N TFT shows enhanced electrical properties as the active layer thickness is 35 nm. Its field-effect mobility, on/off radio and sub-threshold swing are 17.53 cm2 V‑1 · s‑1, 106 and 0.36 V/dec, respectively. These results indicate that the suitable thickness of the active layer can enhance the quality of ITZO:N films and decrease the defects density of ITZO:N TFT. Thus, the properties of ITZO:N TFT can be optimized by adjusting the thickness of the active layer.

A grating coupler with a trapezoidal hole array for perfectly vertical light coupling between optical fibers and waveguides

NASA Astrophysics Data System (ADS)

Mizutani, Akio; Eto, Yohei; Kikuta, Hisao

2017-12-01

A grating coupler with a trapezoidal hole array was designed and fabricated for perfectly vertical light coupling between a single-mode optical fiber and a silicon waveguide on a silicon-on-insulator (SOI) substrate. The grating coupler with an efficiency of 53% was computationally designed at a 1.1-µm-thick buried oxide (BOX) layer. The grating coupler and silicon waveguide were fabricated on the SOI substrate with a 3.0-µm-thick BOX layer by a single full-etch process. The measured coupling efficiency was 24% for TE-polarized light at 1528 nm wavelength, which was 0.69 times of the calculated coupling efficiency for the 3.0-µm-thick BOX layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoffman, Jason D.; Kirby, Brian J.; Kwon, Jihwan

Interfaces between correlated complex oxides are promising avenues to realize new forms of magnetism that arise as a result of charge transfer, proximity effects, and locally broken symmetries. We report on the discovery of a noncollinear magnetic structure in superlattices of the ferromagnetic metallic oxide La 2/3Sr 1/3MnO 3 (LSMO) and the correlated metal LaNiO 3 (LNO). The exchange interaction between LSMO layers is mediated by the intervening LNO, such that the angle between the magnetization of neighboring LSMO layers varies in an oscillatory manner with the thickness of the LNO layer. The magnetic field, temperature, and spacer thickness dependencemore » of the noncollinear structure are inconsistent with the bilinear and biquadratic interactions that are used to model the magnetic structure in conventional metallic multilayers. A model that couples the LSMO layers to a helical spin state within the LNO fits the observed behavior. We propose that the spin-helix results from the interaction between a spatially varying spin susceptibility within the LNO and interfacial charge transfer that creates localized Ni 2+ states. In conclusion, our work suggests a new approach to engineering noncollinear spin textures in metallic oxide heterostructures.« less

Anomalous temperature dependence of training effect in specular spin valve using ultrathin Cr2O3-nano-oxide layer with magnetoelectric effect

NASA Astrophysics Data System (ADS)

Sawada, Kazuya; Shimomura, Naoki; Doi, Masaaki; Sahashi, Masashi

2010-05-01

Exchange bias from antiferromagnetic (AFM) oxides with a magnetoelectric (ME) effect has been studied for controlling ferromagnetic (FM) magnetizations by an applying electric field. However, thick ME oxides are needed for realizing the electrically controlled exchange biasing. Therefore, in this study the temperature dependencies of the training effect for the Cr2O3-nano-oxide-layer (NOL) are investigated for confirming the ME effect of the Cr2O3-NOL. The anomalous temperature tendencies of system dependent constant for exchange bias and magnetoresistance (MR), κHex and κMR, were observed, which are probably originated from the ME effect of the Cr2O3-NOL because (1) these anomalous temperature tendencies could not be obtained in the CoO-NOL spin valve and (2) the κHex and κMR are defined as the strength of the coupling between FM and AFM spins. It is remarkable result for us to confirm the possibility of the ME effect from the ultrathin Cr2O3 layer (less than 1 nm) because the ME effect was observed in only thick ME materials.

Corrosion resistance of titanium ion implanted AZ91 magnesium alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu Chenglong; Xin Yunchang; Tian Xiubo

2007-03-15

Degradable metal alloys constitute a new class of materials for load-bearing biomedical implants. Owing to their good mechanical properties and biocompatibility, magnesium alloys are promising in degradable prosthetic implants. The objective of this study is to improve the corrosion behavior of surgical AZ91 magnesium alloy by titanium ion implantation. The surface characteristics of the ion implanted layer in the magnesium alloys are examined. The authors' results disclose that an intermixed layer is produced and the surface oxidized films are mainly composed of titanium oxide with a lesser amount of magnesium oxide. X-ray photoelectron spectroscopy reveals that the oxide has threemore » layers. The outer layer which is 10 nm thick is mainly composed of MgO and TiO{sub 2} with some Mg(OH){sub 2}. The middle layer that is 50 nm thick comprises predominantly TiO{sub 2} and MgO with minor contributions from MgAl{sub 2}O{sub 4} and TiO. The third layer from the surface is rich in metallic Mg, Ti, Al, and Ti{sub 3}Al. The effects of Ti ion implantation on the corrosion resistance and electrochemical behavior of the magnesium alloys are investigated in simulated body fluids at 37{+-}1 deg. C using electrochemical impedance spectroscopy and open circuit potential techniques. Compared to the unimplanted AZ91 alloy, titanium ion implantation significantly shifts the open circuit potential (OCP) to a more positive potential and improves the corrosion resistance at OCP. This phenomenon can be ascribed to the more compact surface oxide film, enhanced reoxidation on the implanted surface, as well as the increased {beta}-Mg{sub 12}Al{sub 17} phase.« less

Zirconium oxide surface passivation of crystalline silicon

NASA Astrophysics Data System (ADS)

Wan, Yimao; Bullock, James; Hettick, Mark; Xu, Zhaoran; Yan, Di; Peng, Jun; Javey, Ali; Cuevas, Andres

2018-05-01

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited zirconium oxide (ZrOx). The optimum layer thickness and activation annealing conditions are determined to be 20 nm and 300 °C for 20 min. Cross-sectional transmission electron microscopy imaging shows an approximately 1.6 nm thick SiOx interfacial layer underneath an 18 nm ZrOx layer, consistent with ellipsometry measurements (˜20 nm). Capacitance-voltage measurements show that the annealed ZrOx film features a low interface defect density of 1.0 × 1011 cm-2 eV-1 and a low negative film charge density of -6 × 1010 cm-2. Effective lifetimes of 673 μs and 1.1 ms are achieved on p-type and n-type 1 Ω cm undiffused c-Si wafers, respectively, corresponding to an implied open circuit voltage above 720 mV in both cases. The results demonstrate that surface passivation quality provided by ALD ZrOx is consistent with the requirements of high efficiency silicon solar cells.

Effect of yttrium on martensite-austenite phase transformation temperatures and high temperature oxidation kinetics of Ti-Ni-Hf high-temperature shape memory alloys

NASA Astrophysics Data System (ADS)

Kim, Jeoung Han; Kim, Kyong Min; Yeom, Jong Taek; Young, Sung

2016-03-01

The effect of yttrium (< 5.5 at%) on the martensite-austenite phase transformation temperatures, microstructural evolution, and hot workability of Ti-Ni-Hf high-temperature shape memory alloys is investigated. For these purposes, differential scanning calorimetry, hot compression, and thermo-gravimetric tests are conducted. The phase transformation temperatures are not noticeably influenced by the addition of yttrium up to 4.5 at%. Furthermore, the hot workability is not significantly affected by the yttrium addition up to 1.0 at%. However, when the amount of yttrium addition exceeds 1.0 at%, the hot workability deteriorates significantly. In contrast, remarkable improvement in the high temperature oxidation resistance due to the yttrium addition is demonstrated. The total thickness of the oxide layers is substantially thinner in the Y-added specimen. In particular, the thickness of (Ti,Hf) oxide layer is reduced from 200 µm to 120 µm by the addition of 0.3 at% Y.

In Situ Monitoring of Chemical Reactions at a Solid-Water Interface by Femtosecond Acoustics.

PubMed

Shen, Chih-Chiang; Weng, Meng-Yu; Sheu, Jinn-Kong; Yao, Yi-Ting; Sun, Chi-Kuang

2017-11-02

Chemical reactions at a solid-liquid interface are of fundamental importance. Interfacial chemical reactions occur not only at the very interface but also in the subsurface area, while existing monitoring techniques either provide limited spatial resolution or are applicable only for the outmost atomic layer. Here, with the aid of the time-domain analysis with femtosecond acoustics, we demonstrate a subatomic-level-resolution technique to longitudinally monitor chemical reactions at solid-water interfaces, capable of in situ monitoring even the subsurface area under atmospheric conditions. Our work was proven by monitoring the already-known anode oxidation process occurring during photoelectrochemical water splitting. Furthermore, whenever the oxide layer thickness equals an integer  number of the effective atomic layer thickness, the measured acoustic echo will show higher signal-to-noise ratios with reduced speckle noise, indicating the quantum-like behavior of this coherent-phonon-based technique.

Large-area synthesis of WSe2 from WO3 by selenium-oxygen ion exchange

NASA Astrophysics Data System (ADS)

Browning, Paul; Eichfeld, Sarah; Zhang, Kehao; Hossain, Lorraine; Lin, Yu-Chuan; Wang, Ke; Lu, Ning; Waite, A. R.; Voevodin, A. A.; Kim, Moon; Robinson, Joshua A.

2015-03-01

Few-layer tungsten diselenide (WSe2) is attractive as a next-generation electronic material as it exhibits modest carrier mobilities and energy band gap in the visible spectra, making it appealing for photovoltaic and low-powered electronic applications. Here we demonstrate the scalable synthesis of large-area, few-layer WSe2 via replacement of oxygen in hexagonally stabilized tungsten oxide films using dimethyl selenium. Cross-sectional transmission electron microscopy reveals successful control of the final WSe2 film thickness through control of initial tungsten oxide thickness, as well as development of layered films with grain sizes up to several hundred nanometers. Raman spectroscopy and atomic force microscopy confirms high crystal uniformity of the converted WSe2, and time domain thermo-reflectance provide evidence that near record low thermal conductivity is achievable in ultra-thin WSe2 using this method.

Microstructure, phase composition and corrosion resistance of Ni2O3 coatings produced using laser alloying method

NASA Astrophysics Data System (ADS)

Bartkowska, Aneta; Przestacki, Damian; Chwalczuk, Tadeusz

2016-12-01

The paper presents the studies' results of microstructure, microhardness, cohesion, phase composition and the corrosion resistance analysis of C45 steel after laser alloying with nickel oxide (Ni2O3). The aim of the laser alloying was to obtain the surface layer with new properties through covering C45 steel by precoat containing modifying compound, and then remelting this precoat using laser beam. As a result of this process the surface layer consisting of remelted zone and heat affected zone was obtained. In the remelted zone an increased amount of modifying elements was observed. It was also found that the surface layer formed during the laser alloying with Ni2O3 was characterized by good corrosion resistance. This property has changed depending on the thickness of the applied precoat. It was observed that the thickness increase of nickel oxides precoat improves corrosion resistance of produced coatings.

Growth of micrometric oxide layers for the study of metallic surfaces decontamination by laser

NASA Astrophysics Data System (ADS)

Carvalho, Luisa; Pacquentin, Wilfried; Tabarant, Michel; Maskrot, Hicham; Semerok, Alexandre

2017-09-01

The nuclear industry produces a wide range of radioactive waste in term of level of hazard, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop techniques for dismantling and for decontamination in a safe way, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. We propose a method of formation of oxide layer on stainless steel 304L with europium (Eu) as contaminant marker. In this method, an Eu-solution is sprayed on the stainless steel samples. The specimen are firstly treated with a pulsed nanosecond laser and secondly the steel samples are exposed to a 600°C furnace for various durations in order to grow an oxide layer. The oxide structure and in-depth distribution of Eu in the oxide layer are analysed by scanning electron microscopy coupled with energy dispersive X-ray microanalyzer, and by glow discharge optical emission or mass spectrometry. The oxide layers were grown to thicknesses in the range of 200 nm to 4.5 μm regarding to the laser treatment parameters and the heating duration. These contaminated oxides have a `duplex structure' with a mean weight percentage of 0.5% of europium in the volume of the oxide layer. It appears that europium implementation prevents the oxide growth by furnace but has no impact on laser heating. These oxide layers are used to study the decontamination of metallic surfaces such as stainless steel 304L using a nanosecond pulsed laser.

Interface layer to tailor the texture and surface morphology of Al-doped ZnO polycrystalline films on glass substrates

NASA Astrophysics Data System (ADS)

Nomoto, Junichi; Inaba, Katsuhiko; Kobayashi, Shintaro; Makino, Hisao; Yamamoto, Tetsuya

2017-06-01

A 10-nm-thick radio frequency magnetron-sputtered aluminum-doped zinc oxide (AZO) showing a texture with a preferential (0001) orientation on amorphous glass substrates was used as an interface layer for tailoring the orientation of 490-nm-thick polycrystalline AZO films subsequently deposited by direct current (DC) magnetron sputtering at a substrate temperature of 200 °C. Wide-angle X-ray diffraction pole figure analysis showed that the resulting 500-nm-thick AZO films showed a texture with a highly preferential c-axis orientation. This showed that DC-magnetron-sputtered AZO films grew along with the orientation matching that of the interface layer, whereas 500-nm-thick AZO films deposited on bare glass substrates by DC magnetron sputtering exhibited a mixed orientation of the c-plane and other planes. The surface morphology was also improved while retaining the lateral grain size by applying the interface layer as revealed by atomic force microscopy.

Anodic Behavior of the Aluminum Current Collector in Imide-Based Electrolytes: Influence of Solvent, Operating Temperature, and Native Oxide-Layer Thickness.

PubMed

Meister, Paul; Qi, Xin; Kloepsch, Richard; Krämer, Elisabeth; Streipert, Benjamin; Winter, Martin; Placke, Tobias

2017-02-22

The inability of imide salts to form a sufficiently effective passivation layer on aluminum current collectors is one of the main obstacles that limit their broad application in electrochemical energy-storage systems. However, under certain circumstances, the use of electrolytes with imide electrolyte salts in combination with the aluminum current collector is possible. In this contribution, the stability of the aluminum current collector in electrolytes containing either lithium bis(trifluoromethanesulfonyl) imide (LiTFSI) or lithium fluorosulfonyl-(trifluoromethanesulfonyl) imide (LiFTFSI) as conductive salt was investigated by electrochemical techniques, that is, cyclic voltammetry (CV) and chronocoulometry (CC) in either room-temperature ionic liquids or in ethyl methyl sulfone. In particular, the influence of the solvent, operating temperature, and thickness of the native oxide layer of aluminum on the pit formation at the aluminum current collector surface was studied by means of scanning electron microscopy. In general, a more pronounced aluminum dissolution and pit formation was found at elevated temperatures as well as in solvents with a high dielectric constant. An enhanced thickness of the native aluminum oxide layer increases the oxidative stability versus dissolution. Furthermore, we found a different reaction rate depending on dwell time at the upper cut-off potential for aluminum dissolution in TFSI- and FTFSI-based electrolytes during the CC measurements; the use of LiFTFSI facilitated the dissolution of aluminum compared to LiTFSI. Overall, the mechanism of anodic aluminum dissolution is based on: i) the attack of the Al 2 O 3 surface by acidic species and ii) the dissolution of bare aluminum into the electrolyte, which, in turn, is influenced by the electrolyte's dielectric constant. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

All-oxide-based synthetic antiferromagnets exhibiting layer-resolved magnetization reversal

NASA Astrophysics Data System (ADS)

Chen, Binbin; Xu, Haoran; Ma, Chao; Mattauch, Stefan; Lan, Da; Jin, Feng; Guo, Zhuang; Wan, Siyuan; Chen, Pingfan; Gao, Guanyin; Chen, Feng; Su, Yixi; Wu, Wenbin

2017-07-01

Synthesizing antiferromagnets with correlated oxides has been challenging, owing partly to the markedly degraded ferromagnetism of the magnetic layer at nanoscale thicknesses. Here we report on the engineering of an antiferromagnetic interlayer exchange coupling (AF-IEC) between ultrathin but ferromagnetic La2/3Ca1/3MnO3 layers across an insulating CaRu1/2Ti1/2O3 spacer. The layer-resolved magnetic switching leads to sharp steplike hysteresis loops with magnetization plateaus depending on the repetition number of the stacking bilayers. The magnetization configurations can be switched at moderate fields of hundreds of oersted. Moreover, the AF-IEC can also be realized with an alternative magnetic layer of La2/3Sr1/3MnO3 that possesses a Curie temperature near room temperature. The findings will add functionalities to devices with correlated-oxide interfaces.

Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

NASA Astrophysics Data System (ADS)

Fan, Wei

To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers, compared with pure TiO2. A modified 3-element model was adopted to extract the true C-V behavior of the TiAlOx-based MOS capacitor. Extremely small equivalent oxide thickness (EOT) less than 0.5 nm with dielectric leakage 4˜5 magnitude lower than that for SiO2 has been achieved on TiAlOx layer as a result of its excellent dielectric properties.

Seasonal Oxygen Dynamics in a Thermokarst Bog in Interior Alaska: Implications for Rates of Methane Oxidation

NASA Astrophysics Data System (ADS)

Neumann, R. B.; Moorberg, C.; Wong, A.; Waldrop, M. P.; Turetsky, M. R.

2015-12-01

Methane is a potent greenhouse gas, and wetlands represent the largest natural source of methane to the atmosphere. However, much of the methane generated in anoxic wetlands never gets emitted to the atmosphere; up to >90% of generated methane can get oxidized to carbon dioxide. Thus, oxidation is an important methane sink and changes in the rate of methane oxidation can affect wetland methane emissions. Most methane is aerobically oxidized at oxic-anoxic interfaces where rates of oxidation strongly depend on methane and oxygen concentrations. In wetlands, oxygen is often the limiting substrate. To improve understanding of belowground oxygen dynamics and its impact on methane oxidation, we deployed two planar optical oxygen sensors in a thermokarst bog in interior Alaska. Previous work at this site indicated that, similar to other sites, rates of methane oxidation decrease over the growing season. We used the sensors to track spatial and temporal patterns of oxygen concentrations over the growing season. We coupled these in-situ oxygen measurements with periodic oxygen injection experiments performed against the sensor to quantify belowground rates of oxygen consumption. We found that over the season, the thickness of the oxygenated water layer at the peatland surface decreased. Previous research has indicated that in sphagnum-dominated peatlands, like the one studied here, rates of methane oxidation are highest at or slightly below the water table. It is in these saturated but oxygenated locations that both methane and oxygen are available. Thus, a seasonal reduction in the thickness of the oxygenated water layer could restrict methane oxidation. The decrease in thickness of the oxygenated layer coincided with an increase in the rate of oxygen consumption during our oxygen injection experiments. The increase in oxygen consumption was not explained by temperature; we infer it was due to an increase in substrate availability for oxygen consuming reactions and/or abundance of key microbial populations. Together, the data provide an explanation for the seasonal decrease in methane oxidation: rates of oxygen consumption increase over the season, which decreases the amount of oxygen dissolved in porewater at the peatland surface and reduces rates of methane oxidation.

Process for growing a film epitaxially upon a MgO surface

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1997-01-01

A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications.

PubMed

Kou, Kuang-Yang; Huang, Yu-En; Chen, Chien-Hsun; Feng, Shih-Wei

2016-01-01

The interplay of surface texture, strain relaxation, absorbance, grain size, and sheet resistance in textured, boron-doped ZnO (ZnO@B), transparent conductive oxide (TCO) materials of different thicknesses used for thin film, solar cell applications is investigated. The residual strain induced by the lattice mismatch and the difference in the thermal expansion coefficient for thicker ZnO@B is relaxed, leading to an increased surface texture, stronger absorbance, larger grain size, and lower sheet resistance. These experimental results reveal the optical and material characteristics of the TCO layer, which could be useful for enhancing the performance of solar cells through an optimized TCO layer.

Fabrication of low-temperature solid oxide fuel cells with a nanothin protective layer by atomic layer deposition

PubMed Central

2013-01-01

Anode aluminum oxide-supported thin-film fuel cells having a sub-500-nm-thick bilayered electrolyte comprising a gadolinium-doped ceria (GDC) layer and an yttria-stabilized zirconia (YSZ) layer were fabricated and electrochemically characterized in order to investigate the effect of the YSZ protective layer. The highly dense and thin YSZ layer acted as a blockage against electron and oxygen permeation between the anode and GDC electrolyte. Dense GDC and YSZ thin films were fabricated using radio frequency sputtering and atomic layer deposition techniques, respectively. The resulting bilayered thin-film fuel cell generated a significantly higher open circuit voltage of approximately 1.07 V compared with a thin-film fuel cell with a single-layered GDC electrolyte (approximately 0.3 V). PMID:23342963

Effects of the PPy layer thickness on Co-PPy composite films

NASA Astrophysics Data System (ADS)

Haciismailoglu, Murside

2015-11-01

Co-PPy composite films were electrodeposited on ITO substrate from two different solutions potentiostatically. Firstly, the PPy layers with the thicknesses changing from 20 to 5000 nm were produced on ITO. Then Co was electrodeposited on these PPy/ITO substrates with a charge density of 1000 mC cm-2. The electrochemical properties were investigated by the current density-time transients and the variation of the elapsed time for the Co deposition depending on the PPy layer thickness. X-ray photoelectron (XPS) spectra indicated the presence of both Co metal and its oxides on the surface. The weak reflections of the Co3O4, CoO and hcp Co were detected by the X-ray diffraction (XRD) technique. According to scanning electron microscopy (SEM) images, the thickness of the PPy layer strongly affects the Co nucleation. The composite films with the PPy layer thinner than 200 nm and thicker than 2000 nm have an isotropic magnetic behavior due to the symmetrical crystal field. The composite films with the PPy layer thicknesses between 200 and 2000 nm have an anisotropic magnetic behavior attributable to the deterioration of this symmetrical crystal field by the PPy bubbles on the surface. All films are hard magnetic material, since the coercivities are larger than 125 Oe.

XPS-XRF hybrid metrology enabling FDSOI process

NASA Astrophysics Data System (ADS)

Hossain, Mainul; Subramanian, Ganesh; Triyoso, Dina; Wahl, Jeremy; Mcardle, Timothy; Vaid, Alok; Bello, A. F.; Lee, Wei Ti; Klare, Mark; Kwan, Michael; Pois, Heath; Wang, Ying; Larson, Tom

2016-03-01

Planar fully-depleted silicon-on-insulator (FDSOI) technology potentially offers comparable transistor performance as FinFETs. pFET FDOSI devices are based on a silicon germanium (cSiGe) layer on top of a buried oxide (BOX). Ndoped interfacial layer (IL), high-k (HfO2) layer and the metal gate stacks are then successively built on top of the SiGe layer. In-line metrology is critical in precisely monitoring the thickness and composition of the gate stack and associated underlying layers in order to achieve desired process control. However, any single in-line metrology technique is insufficient to obtain the thickness of IL, high-k, cSiGe layers in addition to Ge% and N-dose in one single measurement. A hybrid approach is therefore needed that combines the capabilities of more than one measurement technique to extract multiple parameters in a given film stack. This paper will discuss the approaches, challenges, and results associated with the first-in-industry implementation of XPS-XRF hybrid metrology for simultaneous detection of high-k thickness, IL thickness, N-dose, cSiGe thickness and %Ge, all in one signal measurement on a FDSOI substrate in a manufacturing fab. Strong correlation to electrical data for one or more of these measured parameters will also be presented, establishing the reliability of this technique.

Anti-Oxidative and Antibacterial Self-Healing Edible Polyelectrolyte Multilayer Film in Fresh-Cut Fruits.

PubMed

Liu, Xuefan; Han, Wei; Zhu, Yanxi; Xuan, Hongyun; Ren, Jiaoyu; Zhang, Jianhao; Ge, Liqin

2018-04-01

The consumption of fresh-cut fruits is limited because of the oxidation browning and pathogenic bacteria's growth on the fruit surface. Besides, crack of the fresh-keeping film may shorten the preservation time of fruit. In this work, polyelectrolyte multilayer (PEM) film was fabricated by layer-by-layer (LBL) electrostatic deposition method. The film was made by carboxy methylcellulose sodium (CMC) and chitosan (CS). The as-prepared PEM film had good anti-oxidative and antibacterial capability. It inhibited the growth of Gram-negative bacteria and the antibacterial rate was more than 95%. The stratified structure and linear increase of the absorbance in the film verified a linear increase of film thickness. The slight scratched film could self-heal rapidly after the stimulation of water whatever the layer number was. Moreover, the film could heal cracks whose width was far bigger than the thickness. The application of PEM film on fresh-cut apples showed that PEM film had good browning, weight loss and metabolic activity inhibition ability. These results showed that the PEM film is a good candidate as edible film in fresh-cut fruits applications.

Surface plasmon resonance-based fiber-optic hydrogen gas sensor utilizing palladium supported zinc oxide multilayers and their nanocomposite.

PubMed

Tabassum, Rana; Gupta, Banshi D

2015-02-10

We analyze surface plasmon resonance-based fiber-optic sensor for sensing of small concentrations of hydrogen gas in the visible region of the electromagnetic spectrum. One of the two probes considered has multilayers of zinc oxide (ZnO) and palladium (Pd) while the other has layer of their composite over a silver coated unclad core of the fiber. The analysis is carried out for different volume fractions of palladium nanoparticles dispersed in zinc oxide host material in the nanocomposite layer. For the analysis, a Maxwell-Garnett model is adopted for calculating the dielectric function of a ZnO:Pd nanocomposite having nanoparticles of dimensions smaller than the wavelength of radiation used. The effects of the volume fraction of the nanoparticles in the nanocomposite and the thickness of the nanocomposite layer on the figure of merit of the sensor have been studied. The film thickness of the layer and the volume fraction of nanoparticles in the ZnO:Pd nanocomposite layer have been optimized to achieve the maximum value of the figure of merit of the sensor. It has been found that the figure of merit of the sensing probe coated with ZnO:Pd nanocomposite is more than twofold of the sensing probe coated with multilayers of Pd and ZnO over a silver coated unclad core of the fiber; hence, the sensor with a nanocomposite layer works better than that with multilayers of zinc oxide and palladium. The sensor can be used for online monitoring and remote sensing of hydrogen gas.

Steam based conversion coating on AA6060 alloy: Effect of sodium silicate chemistry and corrosion performance

NASA Astrophysics Data System (ADS)

Din, Rameez Ud; Bordo, Kirill; Tabrizian, Naja; Jellesen, Morten Stendahl; Ambat, Rajan

2017-11-01

Surface treatment of aluminium alloy AA6060 using an industrially applicable pilot steam jet system with and without silicate chemistry has been investigated. Treatment using steam alone and steam with silicate, resulted in an oxide layer formation with thickness ∼425 nm and ∼160 nm, respectively. Moreover, the use of sodium silicate resulted in the formation of distinct microstructure and incorporation of silicate into the oxide film. These oxide films reduced the anodic activity 4 times, while the corrosion protection by silicate containing oxide was the function of its concentration. Further, in acid salt spray and filiform corrosion tests, oxide layer containing silicate exhibited two times higher corrosion resistance.

Magnetic anisotropy and magnetization reversal in Co/Cu multilayers nanowires

NASA Astrophysics Data System (ADS)

Ahmad, Naeem; Chen, J. Y.; Shi, D. W.; Iqbal, Javed; Han, Xiufeng

2012-04-01

The Co/Cu multilayer nanowires fabricated in an array using anodized aluminum oxide (AAO) template by electrodeposition method, have been investigated. It has been observed that the magnetization reversal mode and magnetic anisotropy depend upon the Co and Cu layer thicknesses. Magnetization reversal occurs by curling mode at around Co = 400 nm and Cu = 10 nm, while for Co = 30 nm and Cu = 60 nm, magnetization reversal occurs by nucleation mode. A change of magnetic anisotropy from out of plane to in plane is observed when thickness of Cu layer tCu = 60 nm and that of Co tCo = 30 nm. Magnetic anisotropy is lost when thickness of the Co layer tCo = 400 nm and that of Cu tCu= 10 nm. Magnetic properties have been explained by the competition among shape anisotropy, magnetostatic interactions and magnetocrystalline anisotropy. Magnetic properties can be tuned accordingly depending upon the thickness of the Co and Cu nanodisks.

Novel Magnetic Phenomena in Oxide Thin Films, Interfaces and Heterostructures

NASA Astrophysics Data System (ADS)

Venkatesan, Thirumalai

2015-03-01

Oxide films, heterostructures and interfaces present wonderful opportunities for exploring novel magnetic phenomena. The idea of cationic vacancy induced ferromagnetism was demonstrated by observing ferromagnetism in TaxTi1-xO2(x = 2 - 6%). Using XAS, XPS and XMCD, the magnetism was mainly located at the Ti sites and was shown to arise from Ti vacancies as opposed to Ti3+. The substrate-film interface was crucial for observing the ferromagnetism, as the required concentration of Ti vacancies could only be maintained close to the interface. With electron transport we were able to see with increasing thickness the emerging role of Kondo scattering (mediated by Ti3+) and at larger thickness impurity scattering. The polar LaAlO3/non-polar SrTiO3 interface exhibits a mixture of magnetic phases most likely arising from cationic defects and selective electron occupancy in Ti t2g levels. Using XMCD ferromagnetism was seen at these interfaces even at room temperature. Unlike LaAlO3, polar LaMnO3 is an insulator exhibiting orbital order that has a smaller band gap than SrTiO3. It is a traditional antiferromagnetic material, but when grown on SrTiO3, LaMnO3 exhibits ferromagnetism for film thicknesses exceeding 5 unit cells. This is discussed in terms of electronic reconstruction with polar charge transfer to the LaMnO3 side of the interface and also to the surface of the over layer. Novel magnetic coupling effects are seen in perovskite ferromagnets separated by a polar oxide layer such as LaAlO3 or NdGaO3, whereas non-polar oxides do not show the same effect. The coupling between the ferromagnetic layers oscillates in sign between FM and AFM, depending on the barrier thickness. Such coupling is totally unexpected in the absence of any itinerary electrons, with insulating barriers that are too thick for tunneling. The novel magnetic coupling is shown to be mediated by spin-orbit coupling and also magnetic excitation of defect levels in the polar oxide planes.

Surface characterization and corrosion behavior of calcium phosphate-base composite layer on titanium and its alloys via plasma electrolytic oxidation: A review paper.

PubMed

Rafieerad, A R; Ashra, M R; Mahmoodian, R; Bushroa, A R

2015-12-01

In recent years, calcium phosphate-base composites, such as hydroxyapatite (HA) and carbonate apatite (CA) have been considered desirable and biocompatible coating layers in clinical and biomedical applications such as implants because of the high resistance of the composites. This review focuses on the effects of voltage, time and electrolytes on a calcium phosphate-base composite layer in case of pure titanium and other biomedical grade titanium alloys via the plasma electrolytic oxidation (PEO) method. Remarkably, these parameters changed the structure, morphology, pH, thickness and crystallinity of the obtained coating for various engineering and biomedical applications. Hence, the structured layer caused improvement of the biocompatibility, corrosion resistance and assignment of extra benefits for Osseo integration. The fabricated layer with a thickness range of 10 to 20 μm was evaluated for physical, chemical, mechanical and tribological characteristics via XRD, FESEM, EDS, EIS and corrosion analysis respectively, to determine the effects of the applied parameters and various electrolytes on morphology and phase transition. Moreover, it was observed that during PEO, the concentration of calcium, phosphor and titanium shifts upward, which leads to an enhanced bioactivity by altering the thickness. The results confirm that the crystallinity, thickness and contents of composite layer can be changed by applying thermal treatments. The corrosion behavior was investigated via the potentiodynamic polarization test in a body-simulated environment. Here, the optimum corrosion resistance was obtained for the coating process condition at 500 V for 15 min in Ringer solution. This review has been summarized, aiming at the further development of PEO by producing more adequate titanium-base implants along with desired mechanical and biomedical features. Copyright © 2015 Elsevier B.V. All rights reserved.

Junction characteristics of indium tin oxide/indium phosphide solar cells

NASA Astrophysics Data System (ADS)

Sheldon, P.; Ahrenkiel, R. K.; Hayes, R. E.; Russell, P. E.; Nottenburg, R. N.; Kazmerski, L. L.

Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated. Typical uncorrected efficiencies range from 9-12 percent at AM1 intensities. It is shown that deposition of ITO causes a semi-insulating layer at the InP surface as determined by C-V measurements. The thickness of this layer is approximately 750 A. We believe that this high resistivity region is due to surface accumulation of Fe at the ITO/InP interface.

Heterojunction PbS nanocrystal solar cells with oxide charge-transport layers.

PubMed

Hyun, Byung-Ryool; Choi, Joshua J; Seyler, Kyle L; Hanrath, Tobias; Wise, Frank W

2013-12-23

Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Room-temperature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures.

High-performance SEGISFET pH Sensor using the structure of double-gate a-IGZO TFTs with engineered gate oxides

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2017-03-01

In this paper, we propose a high-performance separative extended gate ion-sensitive field-effect transistor (SEGISFET) that consists of a tin dioxide (SnO2) SEG sensing part and a double-gate structure amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with tantalum pentoxide/silicon dioxide (Ta2O5/SiO2)-engineered top-gate oxide. To increase sensitivity, we maximized the capacitive coupling ratio by applying high-k dielectric at the top-gate oxide layer. As an engineered top-gate oxide, a stack of 25 nm-thick Ta2O5 and 10 nm-thick SiO2 layers was found to simultaneously satisfy a small equivalent oxide thickness (˜17.14 nm), a low leakage current, and a stable interfacial property. The threshold-voltage instability, which is a fundamental issue in a-IGZO TFTs, was improved by low-temperature post-deposition annealing (˜87 °C) using microwave irradiation. The double-gate structure a-IGZO TFTs with engineered top-gate oxide exhibited high mobility, small subthreshold swing, high drive current, and larger on/off current ratio. The a-IGZO SEGISFETs with a dual-gate sensing mode showed a pH sensitivity of 649.04 mV pH-1, which is far beyond the Nernst limit. The non-ideal behavior of ISFETs, hysteresis, and drift effect also improved. These results show that the double-gate structure a-IGZO TFTs with engineered top-gate oxide can be a good candidate for cheap and disposable SEGISFET sensors.

Corrosion Behavior of Plasma-Passivated Cu

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barbour, J.C.; Braithwaite, J.W.; Son, K.A.

1999-07-09

A new approach is being pursued to study corrosion in Cu alloy systems by using combinatorial analysis combined with microscopic experimentation (the Combinatorial Microlab) to determine mechanisms for copper corrosion in air. Corrosion studies are inherently difficult because of complex interactions between materials and environment, forming a multidimensional phase space of corrosion variables. The Combinatorial Microlab was specifically developed to address the mechanism of Cu sulfidation, which is an important reliability issue for electronic components. This approach differs from convention by focusing on microscopic length scales, the relevant scale for corrosion. During accelerated aging, copper is exposed to a varietymore » of corrosive environments containing sulfidizing species that cause corrosion. A matrix experiment was done to determine independent and synergistic effects of initial Cu oxide thickness and point defect density. The CuO{sub x} was controlled by oxidizing Cu in an electron cyclotron resonance (ECR) O{sub 2} plasma, and the point defect density was modified by Cu ion irradiation. The matrix was exposed to 600 ppb H{sub 2}S in 65% relative humidity air atmosphere. This combination revealed the importance of oxide quality in passivating Cu and prevention of the sulfidizing reaction. A native oxide and a defect-laden ECR oxide both react at 20 C to form a thick Cu{sub 2}S layer after exposure to H{sub 2}S, while different thicknesses of as-grown ECR oxide stop the formation of Cu{sub 2}S. The species present in the ECR oxide will be compared to that of an air oxide, and the sulfide layer growth rate will be presented.« less

Strong and reversible modulation of carbon nanotube-silicon heterojunction solar cells by an interfacial oxide layer.

PubMed

Jia, Yi; Cao, Anyuan; Kang, Feiyu; Li, Peixu; Gui, Xuchun; Zhang, Luhui; Shi, Enzheng; Wei, Jinquan; Wang, Kunlin; Zhu, Hongwei; Wu, Dehai

2012-06-21

Deposition of nanostructures such as carbon nanotubes on Si wafers to make heterojunction structures is a promising route toward high efficiency solar cells with reduced cost. Here, we show a significant enhancement in the cell characteristics and power conversion efficiency by growing a silicon oxide layer at the interface between the nanotube film and Si substrate. The cell efficiency increases steadily from 0.5% without interfacial oxide to 8.8% with an optimal oxide thickness of about 1 nm. This systematic study reveals that formation of an oxide layer switches charge transport from thermionic emission to a mixture of thermionic emission and tunneling and improves overall diode properties, which are critical factors for tailoring the cell behavior. By controlled formation and removal of interfacial oxide, we demonstrate oscillation of the cell parameters between two extreme states, where the cell efficiency can be reversibly altered by a factor of 500. Our results suggest that the oxide layer plays an important role in Si-based photovoltaics, and it might be utilized to tune the cell performance in various nanostructure-Si heterojunction structures.

Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic-sulfuric acid anodizing processes of ZL114A aluminum alloys

NASA Astrophysics Data System (ADS)

Hua, Lei; Liu, Jian-hua; Li, Song-mei; Yu, Mei; Wang, Lei; Cui, Yong-xin

2015-03-01

The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were investigated by optical microscopy (OM) and scanning electron microscopy (SEM). The anodic oxidation was performed at 25°C and a constant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 μm. The interpore distance and the diameters of the major pores in the porous layer of the film were within the approximate ranges of 10-20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.

Interface effects in ultra-thin films: Magnetic and chemical properties

NASA Astrophysics Data System (ADS)

Park, Sungkyun

When the thickness of a magnetic layer is comparable to (or smaller than) the electron mean free path, the interface between magnetic and non-magnetic layers becomes very important factor to determine magnetic properties of the ultra-thin films. The quality of interface can enhance (or reduce) the desired properties. Several interesting physical phenomena were studied using these interface effects. The magnetic anisotropy of ultra-thin Co films is studied as function of non-magnetic underlayer thickness and non- magnetic overlayer materials using ex situ Brillouin light scattering (BLS). I observed that perpendicular magnetic anisotropy (PMA) increases with underlayer thickness and saturates after 5 ML. This saturation can be understood as a relaxation of the in-plane lattice parameter of Au(111) on top of Cu(111) to its bulk value. For the overlayer study, Cu, Al, and Au are used. An Au overlayer gives the largest PMA due to the largest in-plane lattice mismatch between Co and Au. An unusual effect was found by adding an additional layer on top of the Au overlayer. An additional Al capping layer on top of the Au overlayer reduces the PMA significantly. The possible explanation is that the misfit strain at the interface between the Al and the Au can be propagated through the Au layer to affect the magnetic properties of Co even though the in- plane lattice mismatch is less than 1%. Another interesting problem in interface interdiffusion and thermal stability in magnetic tunnel junction (MTJ) structures is studied using X-ray photoelectron spectroscopy (XPS). Since XPS is a very chemically sensitive technique, it allows us to monitor interface interdiffusion of the MTJ structures as-deposited and during post-deposition processing. For the plasma- oxidized samples, Fe only participates in the oxidation reduction process. In contrast to plasma-oxidized samples, there were no noticeable chemical shifts as- deposited and during post-deposition processing in air- oxidized samples. However, peak intensity variations were observed due to interface interdiffusion.

Giant dielectric constant dominated by Maxwell-Wagner relaxation in Al{sub 2}O{sub 3}/TiO{sub 2} nanolaminates synthesized by atomic layer deposition.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, W.; Auciello, O.; Premnath, R. N.

2010-01-01

Nanolaminates consisting of Al{sub 2}O{sub 3} and TiO{sub 2} oxide sublayers were synthesized by using atomic layer deposition to produce individual layers with atomic scale thickness control. The sublayer thicknesses were kept constant for each multilayer structure, and were changed from 50 to 0.2 nm for a series of different samples. Giant dielectric constant ({approx}1000) was observed when the sublayer thickness is less than 0.5 nm, which is significantly larger than that of Al{sub 2}O{sub 3} and TiO{sub 2} dielectrics. Detailed investigation revealed that the observed giant dielectric constant is originated from the Maxwell-Wagner type dielectric relaxation.

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

PubMed Central

Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

2016-01-01

The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8″ glass wafer. PMID:26861833

Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

NASA Astrophysics Data System (ADS)

Carey, Benjamin J.; Ou, Jian Zhen; Clark, Rhiannon M.; Berean, Kyle J.; Zavabeti, Ali; Chesman, Anthony S. R.; Russo, Salvy P.; Lau, Desmond W. M.; Xu, Zai-Quan; Bao, Qiaoliang; Kevehei, Omid; Gibson, Brant C.; Dickey, Michael D.; Kaner, Richard B.; Daeneke, Torben; Kalantar-Zadeh, Kourosh

2017-02-01

A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (~1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.

Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals.

PubMed

Carey, Benjamin J; Ou, Jian Zhen; Clark, Rhiannon M; Berean, Kyle J; Zavabeti, Ali; Chesman, Anthony S R; Russo, Salvy P; Lau, Desmond W M; Xu, Zai-Quan; Bao, Qiaoliang; Kevehei, Omid; Gibson, Brant C; Dickey, Michael D; Kaner, Richard B; Daeneke, Torben; Kalantar-Zadeh, Kourosh

2017-02-17

A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.

Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

PubMed Central

Carey, Benjamin J.; Ou, Jian Zhen; Clark, Rhiannon M.; Berean, Kyle J.; Zavabeti, Ali; Chesman, Anthony S. R.; Russo, Salvy P.; Lau, Desmond W. M.; Xu, Zai-Quan; Bao, Qiaoliang; Kavehei, Omid; Gibson, Brant C.; Dickey, Michael D.; Kaner, Richard B.; Daeneke, Torben; Kalantar-Zadeh, Kourosh

2017-01-01

A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes. PMID:28211538

Protein deposition on field-emitter tips and its removal by UV radiation

NASA Astrophysics Data System (ADS)

Panitz, J. A.; Giaever, I.

1980-07-01

Protein deposition on field-emitter tips has been examined using Transmission Electron Microscopy to view the protein coated tip profile. A single layer of adsorbed protein is barely if at all detectable, but double and triple layers produced by the immunologic reaction can be directly observed. As a result, the thickness and morphology of antigen-antibody layers has been directly observed for the first time. Tips exposed first to Bovine Serum Albumin (BSA) and then to anti-BSA rabbit serum are covered with a reasonably uniform, double protein layer ≈130 Å thick. This layer can be built-up to a triple layer ≈275 Å thick by additional exposure to anti-rabbit IgG goat serum. Surface tension forces during the drying process which follows protein deposition appear to affect the thickness and morphology of the protein layers. The oxidation and subsequent change in the morphology of a protein layer exposed to ultraviolet radiation has also been observed using TEM. The destruction of a triple protein layer at a rate of ≈0.5 Å/s is observed for tungsten tips exposed to ≈6 W of UV radiation from a high-pressure mercury arc in laboratory ambient. These results are compared to those obtained from a simple, visual test for protein layer adsorption in which submonolayer coverages of protein can be detected with the unaided eye.

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.

2016-07-18

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locatemore » in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.« less

Development of Protective Coatings for Chromium-Base Alloys

NASA Technical Reports Server (NTRS)

English, J. J.; MacMillan, C. A.; Williams, D. N.; Bartlett, E. S.

1966-01-01

Chromium alloy sheet was clad with 5 to 10-mil-thick oxidation-resistant nickel-base alloy foils. Specimens also contained 1/2 to 1-mil-thick intermediate layers of platinum, tungsten, and/or W-25Re. Cladding was done by the isostatic hot gas-pressure bonding,.process. The clad chromium-alloy specimens were cyclic oxidation tested at 2100 F and 2300 F for up to 200 hours to determine the effectiveness of these metal claddings in protecting the chromium alloy Cr-5W from oxidation and contamination. Cladding systems consisting of 5-mil-thick Ni-20Cr-20W modified with 3 to 5 weight percent aluminum and containing a 1 /2-mil tungsten diffusion barrier demonstrated potential for long-time service at temperatures as high as 2300 F.

Electrode with transparent series resistance for uniform switching of optical modulation devices

DOEpatents

Tench, D Morgan [Camarillo, CA; Cunningham, Michael A [Thousand Oaks, CA; Kobrin, Paul H [Newbury Park, CA

2008-01-08

Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

Passivation of uranium towards air corrosion by N 2+ and C + ion implantation

NASA Astrophysics Data System (ADS)

Arkush, R.; Mintz, M. H.; Shamir, N.

2000-10-01

The passivation of uranium surfaces against air corrosion, by ion implantation processes was studied, using surface analysis methods. Implanting 45 keV N +2 and C + ions produces thin modified surface layers with gradual gradients of the corresponding compounds (i.e., nitrides and carbides, respectively), which avoid the formation of discontinuous interfaces typical to coatings. Such gradual interfaces impart excellent mechanical stability and adhesion to the modified layers, in spite of the large misfit between the metal substrate and the implantation on induced compounds. It turns out that these layers provide an almost absolute protection against air corrosion. A rapid initial stage of oxidation of the modified surface layers takes place, forming very thin protective oxidation zones (1-4 nm thick), which practically stop further air oxidation for years. The mechanism of the initial oxidation stage of the modified layers seems to vary with the type of surface (i.e., either nitrides or carbides). However, in any case the protection ability of the formed oxidation products is excellent, probably due to the close match between these compounds and the underlying nitrides or carbides.

Electrical characterization of anodic alumina substrate with via-in-pad structure

NASA Astrophysics Data System (ADS)

Kim, Moonjung

2013-10-01

An anodic alumina substrate has been developed as a package substrate for dynamic random access memory devices. Unlike the conventional package substrates commonly made by laminating an epoxy-based core and cladding with copper, this substrate is fabricated using aluminum anodization technology. The anodization process produces a thick aluminum oxide layer on the aluminum substrate to be used as a dielectric layer. Placing copper patterns on the anodic aluminum oxide layer forms a new substrate structure that consists of a layered structure of aluminum, anodic aluminum oxide, and copper. Using selective anodization in the fabrication process, a via structure connecting the top copper layer and bottom aluminum layer is demonstrated. Additionally, by putting vias directly in the bond and ball pads in the substrate design, the via-in-pad structure is applied in this work. These two-layer metal structures and via-in-pad arrangements make routing easier and thus provide more design flexibility. Additionally, this new package substrate has improved the power distribution network impedance given the characteristics of these structures.

Rapid, conformal gas-phase formation of silica (SiO2) nanotubes from water condensates

NASA Astrophysics Data System (ADS)

Bae, Changdeuck; Kim, Hyunchul; Yang, Yunjeong; Yoo, Hyunjun; Montero Moreno, Josep M.; Bachmann, Julien; Nielsch, Kornelius; Shin, Hyunjung

2013-06-01

An innovative atomic layer deposition (ALD) concept, with which nanostructures of water condensates with high aspect ratio at equilibrium in cylindrical nanopores can be transformed uniformly into silica (SiO2) at near room temperature and ambient pressure, has been demonstrated for the first time. As a challenging model system, we first prove the conversion of cylindrical water condensates in porous alumina membranes to silica nanotubes (NTs) by introducing SiCl4 as a metal reactant without involving any catalytic reaction. Surprisingly, the water NTs reproducibly transformed into silica NTs, where the wall thickness of the silica NTs deposited per cycle was found to be limited by the amount of condensed water, and it was on the orders of ten nanometers per cycle (i.e., over 50 times faster than that of conventional ALD). More remarkably, the reactions only took place for 10-20 minutes or less without vacuum-related equipment. The thickness of initially adsorbed water layers in cylindrical nanopores was indirectly estimated from the thickness of formed SiO2 layers. With systematic experimental designs, we tackle the classical Kelvin equation in the nanosized pores, and the role of van der Waals forces in the nanoscale wetting phenomena, which is a long-standing issue lacking experimental insight. Moreover, we show that the present strategy is likely generalized to other oxide systems such as TiO2. Our approach opens up a new avenue for ultra-simple preparation of porous oxides and allows for the room temperature formation of dielectric layers toward organic electronic and photovoltaic applications.An innovative atomic layer deposition (ALD) concept, with which nanostructures of water condensates with high aspect ratio at equilibrium in cylindrical nanopores can be transformed uniformly into silica (SiO2) at near room temperature and ambient pressure, has been demonstrated for the first time. As a challenging model system, we first prove the conversion of cylindrical water condensates in porous alumina membranes to silica nanotubes (NTs) by introducing SiCl4 as a metal reactant without involving any catalytic reaction. Surprisingly, the water NTs reproducibly transformed into silica NTs, where the wall thickness of the silica NTs deposited per cycle was found to be limited by the amount of condensed water, and it was on the orders of ten nanometers per cycle (i.e., over 50 times faster than that of conventional ALD). More remarkably, the reactions only took place for 10-20 minutes or less without vacuum-related equipment. The thickness of initially adsorbed water layers in cylindrical nanopores was indirectly estimated from the thickness of formed SiO2 layers. With systematic experimental designs, we tackle the classical Kelvin equation in the nanosized pores, and the role of van der Waals forces in the nanoscale wetting phenomena, which is a long-standing issue lacking experimental insight. Moreover, we show that the present strategy is likely generalized to other oxide systems such as TiO2. Our approach opens up a new avenue for ultra-simple preparation of porous oxides and allows for the room temperature formation of dielectric layers toward organic electronic and photovoltaic applications. Electronic supplementary information (ESI) available: TEM gallery of silica NTs under different experimental conditions, detailed calculation of estimating the thickness of condensed water and Hamaker constants, and a comparison of processing times. See DOI: 10.1039/c3nr00906h

Intermixing and thermal oxidation of ZrO2 thin films grown on a-Si, SiN, and SiO2 by metallic and oxidic mode magnetron sputtering

NASA Astrophysics Data System (ADS)

Coloma Ribera, R.; van de Kruijs, R. W. E.; Sturm, J. M.; Yakshin, A. E.; Bijkerk, F.

2017-03-01

The initial growth of DC sputtered ZrO2 on top of a-Si, SiN, and SiO2 layers has been studied by in vacuo high-sensitivity low energy ion scattering for two gas deposition conditions with different oxygen contents (high-O and low-O conditions). This unique surface sensitive technique allowed the determination of surface composition and thicknesses required to close the ZrO2 layer on all three substrates for both conditions. The ZrO2 layer closes similarly on all substrates due to more favorable enthalpies of formation for ZrO2 and ZrSiO4, resulting in passivation of the Si from the substrate. However, this layer closes at about half of the thickness (˜1.7 nm) for low-O conditions due to less oxidative conditions and less energetic particles arriving at the sample, which leads to less intermixing via silicate formation. In contrast, for high-O conditions, there is more ZrSiO4 and/or SiOx formation, giving more intermixing (˜3.4 nm). In vacuo X-ray photoelectron spectroscopy (XPS) measurements revealed similar stoichiometric ZrO2 layers deposited by both conditions and a higher interaction of the ZrO2 layer with the underlying a-Si for high-O conditions. In addition, oxygen diffusion through low-O ZrO2 films on a-Si has been investigated by ex situ angular-resolved XPS of samples annealed in atmospheric oxygen. For temperatures below 400 °C, no additional oxidation of the underlying a-Si was observed. This, together with the amorphous nature and smoothness of these samples, makes ZrO2 a good candidate as an oxidation protective layer on top of a-Si.

Surface passivation of Fe{sub 3}O{sub 4} nanoparticles with Al{sub 2}O{sub 3} via atomic layer deposition in a rotating fluidized bed reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Chen-Long; Deng, Zhang; Cao, Kun

2016-07-15

Iron(II,III) oxide (Fe{sub 3}O{sub 4}) nanoparticles have shown great promise in many magnetic-related applications such as magnetic resonance imaging, hyperthermia treatment, and targeted drug delivery. Nevertheless, these nanoparticles are vulnerable to oxidation and magnetization loss under ambient conditions, and passivation is usually required for practical applications. In this work, a home-built rotating fluidized bed (RFB) atomic layer deposition (ALD) reactor was employed to form dense and uniform nanoscale Al{sub 2}O{sub 3} passivation layers on Fe{sub 3}O{sub 4} nanoparticles. The RFB reactor facilitated the precursor diffusion in the particle bed and intensified the dynamic dismantling of soft agglomerates, exposing every surfacemore » reactive site to precursor gases. With the aid of in situ mass spectroscopy, it was found that a thicker fluidization bed formed by larger amount of particles increased the residence time of precursors. The prolonged residence time allowed more thorough interactions between the particle surfaces and the precursor gas, resulting in an improvement of the precursor utilization from 78% to nearly 100%, even under a high precursor feeding rate. Uniform passivation layers around the magnetic cores were demonstrated by both transmission electron microscopy and the statistical analysis of Al mass concentrations. Individual particles were coated instead of the soft agglomerates, as was validated by the specific surface area analysis and particle size distribution. The results of thermogravimetric analysis suggested that 5 nm-thick ultrathin Al{sub 2}O{sub 3} coatings could effectively protect the Fe{sub 3}O{sub 4} nanoparticles from oxidation. The x-ray diffraction patterns also showed that the magnetic core crystallinity of such passivated nanoparticles could be well preserved under accelerated oxidation conditions. The precise thickness control via ALD maintained the saturation magnetization at 66.7 emu/g with a 5 nm-thick Al{sub 2}O{sub 3} passivation layer. This good preservation of the magnetic properties with superior oxidation resistance will be beneficial for practical magnetic-based applications.« less

Iron oxide nanoparticle layer templated by polydopamine spheres: a novel scaffold toward hollow-mesoporous magnetic nanoreactors

NASA Astrophysics Data System (ADS)

Huang, Liang; Ao, Lijiao; Xie, Xiaobin; Gao, Guanhui; Foda, Mohamed F.; Su, Wu

2014-12-01

Superparamagnetic iron oxide nanoparticle layers with high packing density and controlled thickness were in situ deposited on metal-affinity organic templates (polydopamine spheres), via one-pot thermal decomposition. The as synthesized hybrid structure served as a facile nano-scaffold toward hollow-mesoporous magnetic carriers, through surfactant-assisted silica encapsulation and its subsequent calcination. Confined but accessible gold nanoparticles were successfully incorporated into these carriers to form a recyclable catalyst, showing quick magnetic response and a large surface area (642.5 m2 g-1). Current nano-reactors exhibit excellent catalytic performance and high stability in reduction of 4-nitrophenol, together with convenient magnetic separability and good reusability. The integration of compact iron oxide nanoparticle layers with programmable polydopamine templates paves the way to fabricate magnetic-response hollow structures, with high permeability and multi-functionality.Superparamagnetic iron oxide nanoparticle layers with high packing density and controlled thickness were in situ deposited on metal-affinity organic templates (polydopamine spheres), via one-pot thermal decomposition. The as synthesized hybrid structure served as a facile nano-scaffold toward hollow-mesoporous magnetic carriers, through surfactant-assisted silica encapsulation and its subsequent calcination. Confined but accessible gold nanoparticles were successfully incorporated into these carriers to form a recyclable catalyst, showing quick magnetic response and a large surface area (642.5 m2 g-1). Current nano-reactors exhibit excellent catalytic performance and high stability in reduction of 4-nitrophenol, together with convenient magnetic separability and good reusability. The integration of compact iron oxide nanoparticle layers with programmable polydopamine templates paves the way to fabricate magnetic-response hollow structures, with high permeability and multi-functionality. Electronic supplementary information (ESI) available: Fig. S1-S5. See DOI: 10.1039/c4nr05931j

Microstructural and mechanical properties of Al2O3/ZrO2 nanomultilayer thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Balakrishnan, G.; Sastikumar, D.; Kuppusami, P.; Babu, R. Venkatesh; Song, Jung Il

2018-02-01

Single layer aluminium oxide (Al2O3), zirconium oxide (ZrO2) and Al2O3/ZrO2 nano multilayer films were deposited on Si (100) substrates at room temperature by pulsed laser deposition. The development of Al2O3/ZrO2 nanolayered structure is an important method used to stabilize the high temperature phase (tetragonal and cubic) of ZrO2 at room temperature. In the Al2O3/ZrO2 multilayer structure, the Al2O3 layer was kept constant at 5 nm, while the ZrO2 layer thickness varied from 5 to 20 nm (5/5, 5/10, 5/15 and 5/20 nm) with a total of 40 bilayers. The X-ray diffraction studies of single layer Al2O3 indicated the γ-Al2O3 of cubic structure, while the single layer ZrO2 indicated both monoclinic and tetragonal phases. The 5/5 and 5/10 nm multilayer films showed the nanocrystalline nature of ZrO2 with tetragonal phase. The high resolution transmission electron microscopy studies indicated the formation of well-defined Al2O3 and ZrO2 layers and that they are of uniform thickness. The atomic force microscopy studies revealed the uniform and dense distribution of nanocrystallites. The nanoindentation studies indicated the hardness of 20.8 ± 1.10 and 10 ± 0.60 GPa, for single layer Al2O3 and ZrO2, respectively, and the hardness of multilayer films varied with bilayer thickness.

The synthesis and application of fine particles for coatings and composites

NASA Astrophysics Data System (ADS)

Stephenson, Richard Charles

A variety of coating methods are presented for producing titanium and zirconium oxide coatings on spherical alpha-alumina substrates. Some methods did not completely coat the alumina substrate leaving surface areas exposed. Techniques such as surface modifications with PDVB and 4-VP did produce coatings of metal oxides of very high quality. The best metal oxide coatings are produced from pre-treatment of the alumina microspheres followed by the acid catalyzed hydrolysis of the metal tetra-alkoxides. Methods to investigate converting titanium oxide and zirconium oxide coated alumina microspheres to the corresponding metal carbide coated alumina microspheres have been done. The methods involving direct reduction of the metal oxides by methane and methane-hydrogen gas proved inefficient in producing high quality metal carbide coatings. It is evident higher processing temperatures are required to achieve good metal carbide yield by these methods. Metal oxide coated products carbided by ART (Buffalo, NY) proved the carbiding can be accomplished at higher temperatures and with a different carburizing gas. In addition to the ART carbiding method, the magnesium thermite reaction is a promising method in converting metal oxides to metal carbides at much lower temperatures and shorter processing times. The electrophoretic deposition of Bi2Sr2CaCu 2O8 powder was in ethanol. Of critical consequence were the design of the cathode geometry and the arrangement of the electrodes so that all faces and edges of the silver anode were coated simultaneously. This was achieved by shaping the platinum cathode into a configuration that allowed the silver tape to be completely surrounded by the platinum. The electrophoretic cell was set up to keep the electrodes stationary thereby maintaining a constant distance from the cathode and anode (3 mm). The relationship between deposition time and coating thickness was determined for various powder loadings for a given electric field strength (62 V). For low powder loadings (10 and 20 g/L), the thickness of the coating increases with increasing deposition time (6, 12, and 24 hours). At a powder loading of 30 g/L, the thickness of the BSCCO layer decreases from a deposition time of 6 to 12 hours. At 24 hours, the layer thickness increases. Very high powder loadings (40 g/L) showed a linear decrease in the BSCCO layer thickness with increasing deposition time. Analysis by XRD showed the EPD superconductor exhibited preferential orientation on the silver tape. The degree of orientation was related to the layer thickness and hence the deposition times. Thermal treatment at 800°C in 90% Ar-10% O2 improved the orientation effects. A marked improvement in the surface texture was also observed by SEM. Carbon nanotubes were synthesized via Fe catalysis in an aerosol column in the presence of Ar, CO, and H2 gas. Fe particles were generated by the thermal decarbonylation of Fe(CO)5. Multiwalled and single-walled carbon nanotubes were grown from the decomposition of CO gas on the forming Fe particles. Optimal conditions were determined for producing high yields of single-walled nanotubes. A growth theory is proposed based on the results. (Abstract shortened by UMI.)

Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

NASA Astrophysics Data System (ADS)

Frewin, C. L.; Locke, C.; Wang, J.; Spagnol, P.; Saddow, S. E.

2009-08-01

The growth of highly oriented 3C-SiC directly on an oxide release layer, composed of a 20-nm-thick poly-Si seed layer and a 550-nm-thick thermally deposited oxide on a (1 1 1)Si substrate, was investigated as an alternative to using silicon-on-insulator (SOI) substrates for freestanding SiC films for MEMS applications. The resulting SiC film was characterized by X-ray diffraction (XRD) with the X-ray rocking curve of the (1 1 1) diffraction peak displaying a FWHM of 0.115° (414″), which was better than that for 3C-SiC films grown directly on (1 1 1)Si during the same deposition process. However, the XRD peak amplitude for the 3C-SiC film on the poly-Si seed layer was much less than for the (1 1 1)Si control substrate, due to slight in-plane misorientations in the film. Surprisingly, the film was solely composed of (1 1 1) 3C-SiC grains and possessed no 3C-SiC grains oriented along the <3 1 1> and <1 1 0> directions which were the original directions of the poly-Si seed layer. With this new process, MEMS structures such as cantilevers and membranes can be easily released leaving behind high-quality 3C-SiC structures.

Nested potassium hydroxide etching and protective coatings for silicon-based microreactors

NASA Astrophysics Data System (ADS)

de Mas, Nuria; Schmidt, Martin A.; Jensen, Klavs F.

2014-03-01

We have developed a multilayer, multichannel silicon-based microreactor that uses elemental fluorine as a reagent and generates hydrogen fluoride as a byproduct. Nested potassium hydroxide etching (using silicon nitride and silicon oxide as masking materials) was developed to create a large number of channels (60 reaction channels connected to individual gas and liquid distributors) of significantly different depths (50-650 µm) with sloped walls (54.7° with respect to the (1 0 0) wafer surface) and precise control over their geometry. The wetted areas were coated with thermally grown silicon oxide and electron-beam evaporated nickel films to protect them from the corrosive fluorination environment. Up to four Pyrex layers were anodically bonded to three silicon layers in a total of six bonding steps to cap the microchannels and stack the reaction layers. The average pinhole density in as-evaporated films was 3 holes cm-2. Heating during anodic bonding (up to 350 °C for 4 min) did not significantly alter the film composition. Upon fluorine exposure, nickel films (160 nm thick) deposited on an adhesion layer of Cr (10 nm) over an oxidized silicon substrate (up to 500 nm thick SiO2) led to the formation of a nickel fluoride passivation layer. This microreactor was used to investigate direct fluorinations at room temperature over several hours without visible signs of film erosion.

Process for growing a film epitaxially upon a MGO surface and structures formed with the process

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1998-01-01

A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Soshi, E-mail: sato.soshi@cies.tohoku.ac.jp; Honjo, Hiroaki; Niwa, Masaaki

2015-04-06

We have investigated the redox reaction on the surface of Ta/CoFeB/MgO/CoFeB magnetic tunnel junction stack samples after annealing at 300, 350, and 400 °C for 1 h using angle-resolved X-ray photoelectron spectroscopy for precise analysis of the chemical bonding states. At a capping tantalum layer thickness of 1 nm, both the capping tantalum layer and the surface of the underneath CoFeB layer in the as-deposited stack sample were naturally oxidized. By comparison of the Co 2p and Fe 2p spectra among the as-deposited and annealed samples, reduction of the naturally oxidized cobalt and iron atoms occurred on the surface of the CoFeB layer.more » The reduction reaction was more significant at higher annealing temperature. Oxidized cobalt and iron were reduced by boron atoms that diffused toward the surface of the top CoFeB layer. A single CoFeB layer was prepared on SiO{sub 2}, and a confirmatory evidence of the redox reaction with boron diffusion was obtained by angle-resolved X-ray photoelectron spectroscopy analysis of the naturally oxidized surface of the CoFeB single layer after annealing. The redox reaction is theoretically reasonable based on the Ellingham diagram.« less

Monitoring the in-situ oxide growth on uranium by ultraviolet-visible reflectance spectroscopy

NASA Astrophysics Data System (ADS)

Schweke, Danielle; Maimon, Chen; Chernia, Zelig; Livneh, Tsachi

2012-11-01

We demonstrate the in-situ monitoring of oxide growth on U-0.1 wt. % Cr by means of UV-visible reflectance spectroscopy in the thickness range of ˜20-150 nm. Two different approaches are presented: In the "modeling approach," we employ a model for a metallic substrate covered by a dielectric layer, while taking into account the buildup of oxygen gradient and surface roughness. Then, we fit the simulated spectra to the experimental one. In the "extrema analysis," we derive an approximated analytical expression, which relates the oxide thickness to the position of the extrema in the reflectance spectra based on the condition for optical interference of the reflected light. Good agreement is found between the values extracted by the two procedures. Activation energy of ˜21 kcal/mole was obtained by monitoring the oxide growth in the temperature range of 22-90 °C. The upper bound for the thickness determination is argued to be mostly dictated by cracking and detachment processes in the formed oxide.

Density change and viscous flow during structural relaxation of plasma-enhanced chemical-vapor-deposited silicon oxide films

NASA Astrophysics Data System (ADS)

Cao, Zhiqiang; Zhang, Xin

2004-10-01

The structural relaxation of plasma-enhanced chemical-vapor-deposited (PECVD) silane-based silicon oxide films during thermal cycling and annealing has been studied using wafer curvature measurements. These measurements, which determine stress in the amorphous silicon oxide films, are sensitive to both plastic deformation and density changes. A quantitative case study of such changes has been done based upon the experimental results. A microstructure-based mechanism elucidates seams as a source of density change and voids as a source of plastic deformation, accompanied by a viscous flow. This theory was then used to explain a series of experimental results that are related to thermal cycling as well as annealing of PECVD silicon oxide films including stress hysteresis generation and reduction and coefficient of thermal-expansion changes. In particular, the thickness effect was examined; PECVD silicon oxide films with a thickness varying from 1to40μm were studied, as certain demanding applications in microelectromechanical systems require such thick films serving as heat/electrical insulation layers.

Studies of Large-Area Inversion-Layer Metal-Insulator-Semiconductor (IL/MIS) Solar Cells and Arrays

NASA Technical Reports Server (NTRS)

Ho, Fat Duen

1996-01-01

Many inversion-layer metal-insulator-semiconductor (IL/MIS) solar cells have been fabricated. There are around eighteen 1 cm(exp 2) IL/MIS solar cells which have efficiencies greater than 7%. There are only about three 19 cm(exp 2) IL/MIS cells which have efficiencies greater than 4%. The more accurate control of the thickness of the thin layer of oxide between aluminum and silicon of the MIS contacts has been achieved. A lot of effort and progress have been made in this area. A comprehensive model for MIS contacts under dark conditions has been developed that covers a wide range of parameters. It has been applied to MIS solar cells. One of the main advantages of these models is the prediction of the range of the thin oxide thickness versus the maximum efficiencies of the MIS solar cells. This is particularly important when the thickness is increased to 25 A. This study is very useful for our investigation of the IL/MIS solar cells. The two-dimensional numerical model for the IL/MIS solar cells has been tried to develop and the results are presented in this report.

Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi

2015-02-16

We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al{sub 2}O{sub 3} and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of ∼76 cm{sup 2}/V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al{sub 2}O{sub 3} ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm{sup 2}/V s for GaSb-OI p-MOSFETs with themore » 20-nm-thick GaSb layer.« less

Carbon-Nanotube Conductive Layers for Thin-Film Solar Cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.

2005-01-01

Thin, transparent layers comprising mats of carbon nanotubes have been proposed for providing lateral (that is, inplane) electrical conductivities for collecting electric currents from the front surfaces of the emitter layers of thin-film solar photovoltaic cells. Traditionally, thin, semitransparent films of other electrically conductive materials (usually, indium tin oxide, zinc oxide, or cadmium sulfide) have been used for this purpose. As in the cases of the traditional semitransparent conductive films, the currents collected by the nanotube layers would, in turn, be further collected by front metal contact stripes. Depending on details of a specific solar-cell design, the layer of carbon nanotubes would be deposited in addition to, or instead of, a semitransparent layer of one of these traditional conductive materials (see figure). The proposal is expected to afford the following advantages: The electrical conductivity of the carbon- nanotube layer would exceed that of the corresponding semitransparent layer of traditional electrically conductive material. The greater electrical conductivity of the carbon-nanotube layer would make it possible to retain adequate lateral electrical conductivity while reducing the thickness of, or eliminating entirely, the traditional semitransparent conductive layer. As a consequence of thinning or elimination of the traditional semitransparent conductive layer, less light would be absorbed, so that more of the incident light would be available for photovoltaic conversion. The greater electrical conductivity of the carbon-nanotube layer would make it possible to increase the distance between front metal contact stripes, in addition to (or instead of) thinning or eliminating the layer of traditional semitransparent conductive material. Consequently, the fraction of solar-cell area shadowed by front metal contact stripes would be reduced again, making more of the incident light available for photovoltaic conversion. The electrical conductivities of individual carbon nanotubes can be so high that the mat of carbon nanotubes could be made sparse enough to be adequately transparent while affording adequate lateral electrical conductivity of the mat as a whole. The thickness of the nanotube layer would be chosen so that the layer would contribute significant lateral electrical conductivity, yet would be as nearly transparent as possible to incident light. A typical thickness for satisfying these competing requirements is expected to lie between 50 and 100 nm. The optimum thickness must be calculated by comparing the lateral electrical conductivity, the distance between front metal stripes, and the amount of light lost by absorption in the nanotube layer.

Thick adherent dielectric films on plastic substrates and method for depositing same

DOEpatents

Wickboldt, Paul; Ellingboe, Albert R.; Theiss, Steven D.; Smith, Patrick M.

2002-01-01

Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 .mu.m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N.sub.2, between the plastic substrate and the cooling chucks. Thick adherent dielectric films up to about 5 .mu.m have been deposited on plastic substrates which include the above-referenced properties, and which enable the plastic substrates to withstand laser processing temperatures applied to materials deposited on the dielectric films.

Isolation and characterization of nanosheets containing few layers of the Aurivillius family of oxides and metal-organic compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sreedhara, M.B.; Prasad, B.E.; Moirangthem, Monali

2015-04-15

Nanosheets containing few-layers of ferroelectric Aurivillius family of oxides, Bi{sub 2}A{sub n−1}B{sub n}O{sub 3n+3} (where A=Bi{sup 3+}, Ba{sup 2+} etc. and B=Ti{sup 4+}, Fe{sup 3+} etc.) with n=3, 4, 5, 6 and 7 have been prepared by reaction with n-butyllithium, followed by exfoliation in water. The few-layer samples have been characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and other techniques. The few-layer species have a thickness corresponding to a fraction of the c-parameter along which axis the perovskite layers are stacked. Magnetization measurements have been carried out on the few-layer samples containing iron. Few-layer species of a fewmore » layered metal-organic compounds have been obtained by ultrasonication and characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and magnetic measurements. Significant changes in the optical spectra and magnetic properties are found in the few-layer species compared to the bulk samples. Few-layer species of the Aurivillius family of oxides may find uses as thin layer dielectrics in photovoltaics and other applications. - Graphical abstract: Exfoliation of the layered Aurivillius oxides into few-layer nanosheets by chemical Li intercalation using n-BuLi followed by reaction in water. Exfoliation of the layered metal-organic compounds into few-layer nanosheets by ultrasonication. - Highlights: • Few-layer nanosheets of Aurivillius family of oxides with perovskite layers have been generated by lithium intercalation. • Few-layer nanosheets of few layered metal-organic compounds have been generated by ultrasonication. • Few-layer nanosheets of the Aurivillius oxides have been characterized by AFM, TEM and optical spectroscopy. • Aurivillius oxides containing Fe show layer dependent magnetic properties. • Exfoliated few-layer metal-organic compounds show changes in spectroscopic and magnetic properties compared with bulk materials.« less

Monitoring the layer-by-layer self-assembly of graphene and graphene oxide by spectroscopic ellipsometry.

PubMed

Zhou, Kai-Ge; Chang, Meng-Jie; Wang, Hang-Xing; Xie, Yu-Long; Zhang, Hao-Li

2012-01-01

Thin films of graphene oxide, graphene and copper (II) phthalocyanine dye have been successfully fabricated by electrostatic layer-by-layer (LbL) assembly approach. We present the first variable angle spectroscopic ellipsometry (VASE) investigation on these graphene-dye hybrid thin films. The thickness evaluation suggested that our LbL assembly process produces highly uniform and reproducible thin films. We demonstrate that the refractive indices of the graphene-dye thin films undergo dramatic variation in the range close to the absorption of the dyes. This investigation provides new insight to the optical properties of graphene containing thin films and shall help to establish an appropriate optical model for graphene-based hybrid materials.

Dielectric function of InGaAs in the visible

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Sieg, R. E.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

1990-01-01

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Dielectric function of InGaAs in the visible

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Yao, H. D.; Snyder, P. G.; Woolam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.; Sieg, R. E.

1990-01-01

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X (0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Nucleation and growth of dielectric films on III-V semiconductors during atomic layer deposition

NASA Astrophysics Data System (ADS)

Granados Alpizar, Bernal

In order to continue with metal-oxide-semiconductors (CMOS) transistor scaling and to reduce the power density, the channel should be replaced with a material having a higher electron mobility, such as a III-V semiconductor. However, the integration of III-V's is a challenge because these materials oxidize rapidly when exposed to air and the native oxide produced is characterized by a high density of defects. Deposition of high-k materials on III-V semiconductors using Atomic Layer Deposition (ALD) reduces the thickness of these oxides, improving the semiconductor/oxide interface quality and the transistor electrical characteristics. In this work, ALD is used to deposit two dielectrics, Al 2O3 and TiO2, on two III-V materials, GaAs and InGaAs, and in-situ X-ray photoelectron spectroscopy (XPS) and in-situ thermal programmed desorption (TPD) are used for interface characterization. Hydrofluoric acid (HF) etching of GaAs(100) and brief reoxidation in air produces a 9.0 ±1.6 Å-thick oxide overlayer containing 86% As oxides. The oxides are removed by 1 s pulses of trimethylaluminum (TMA) or TiCl4. TMA removes the oxide overlayer while depositing a 7.5 ± 1.6 Å thick aluminum oxide. The reaction follows a ligand exchange mechanism producing nonvolatile Al-O species that remain on the surface. TiCl4 exposure removes the oxide overlayer in the temperature range 89°C to 300°C, depositing approximately 0.04 monolayer of titanium oxide for deposition temperatures from 89°C to 135°C, but no titanium oxide is present from 170 °C to 230 °C. TiCl4 forms a volatile oxychloride product and removes O from the surface while leaving Cl atoms adsorbed to an elemental As layer, chemically passivating the surface. The native oxide of In0.53Ga0.47As(100) is removed using liquid HF and gas phase HF before deposition of Al2O3 using TMA and H2O at 170 °C. An aluminium oxide film with a thickness of 7.2 ± 1.2 Å and 7.3 ± 1.2 Å is deposited during the first pulse of TMA on liquid and gas phase HF treated samples, respectively. After three complete ALD cycles the thickness of the aluminum oxide film is 10.0 ± 1.2 Å on liquid HF treated and 6.6 ± 1.2 Å on gas phase HF treated surfaces. Samples treated with gas phase HF inhibit growth. Inhibition is caused by residual F atoms that passivate the surface and by surface poisoning due to the thicker carbon film deposited during the first pulse of TMA. On InGaAs covered by native oxide, the first TMA pulse deposits 9 Å of aluminum oxide, and reaches saturation at 13 Å after 15 pulses of TMA. The film grows by scavenging oxygen from the substrate oxides. Substrate oxides are reduced by the first pulse of TMA even at 0°C. At 0°C, on a 9 Å thick Ga-rich oxide surface, 1 pulse of TMA mainly physisorbs and a limited amount of aluminum oxide is deposited. At 0°C, 110°C, and 170°C, more aluminum oxide is deposited on surfaces initially containing As oxide, and larger binding energy (BE) shifts of the O 1s peak are observed compared to surfaces that contain Ga oxides only, showing that As oxides improve the nucleation of Al2O 3.

The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

NASA Astrophysics Data System (ADS)

Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

2016-12-01

Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

The low coherence Fabry-Pérot interferometer with diamond and ZnO layers

NASA Astrophysics Data System (ADS)

Majchrowicz, D.; Den, W.; Hirsch, M.

2016-09-01

The authors present a fiber-optic Fabry-Pérot interferometer built with the application of diamond and zinc oxide (ZnO) thin layers. Thin ZnO films were deposited on the tip of a standard telecommunication single-mode optical fiber (SMF- 28) while the diamond layer was grown on the plate of silicon substrate. Investigated ZnO layers were fabricated by atomic layer deposition (ALD) and the diamond films were deposited using Microwave Plasma Enhanced Chemical Vapor Deposition (μPE CVD) system. Different thickness of layers was examined. The measurements were performed for the fiber-optic Fabry-Pérot interferometer working in the reflective mode. Spectra were registered for various thicknesses of ZnO layer and various length of the air cavity. As a light source, two superluminescent diodes (SLD) with central wavelength of 1300 nm and 1550 nm were used in measurement set-up.

Variation of superconducting transition temperature by proximity effect in NbN/FeN bilayers

NASA Astrophysics Data System (ADS)

Hwang, Tae-Jong; Kim, Dong-Ho

2017-09-01

We report on the proximity effect in superconductor/ferromagnet bilayers made of a new combination of NbN for the superconductor and FeN for the ferromagnet. The bilayers were prepared by reactive magnetron sputtering on a thermally oxidized Si substrate. For a constant NbN layer thickness, the superconducting transition temperatures of the bilayers exhibited a nonmonotonic dependence on the thickness of the FeN layer. The results were interpreted in terms of the proximity effect between the superconductor and ferromagnetic materials.

Porous Aluminum Oxide and Magnesium Oxide Films Using Organic Hydrogels as Structure Matrices

PubMed Central

Chen, Zimei

2018-01-01

We describe the synthesis of mesoporous Al2O3 and MgO layers on silicon wafer substrates by using poly(dimethylacrylamide) hydrogels as porogenic matrices. Hydrogel films are prepared by spreading the polymer through spin-coating, followed by photo-cross-linking and anchoring to the substrate surface. The metal oxides are obtained by swelling the hydrogels in the respective metal nitrate solutions and subsequent thermal conversion. Combustion of the hydrogel results in mesoporous metal oxide layers with thicknesses in the μm range and high specific surface areas up to 558 m2∙g−1. Materials are characterized by SEM, FIB ablation, EDX, and Kr physisorption porosimetry. PMID:29565802

Method and apparatus for detecting the presence and thickness of carbon and oxide layers on EUV reflective surfaces

DOEpatents

Malinowski, Michael E.

2005-01-25

The characteristics of radiation that is reflected from carbon deposits and oxidation formations on highly reflective surfaces such as Mo/Si mirrors can be quantified and employed to detect and measure the presence of such impurities on optics. Specifically, it has been shown that carbon deposits on a Mo/Si multilayer mirror decreases the intensity of reflected HeNe laser (632.8 nm) light. In contrast, oxide layers formed on the mirror should cause an increase in HeNe power reflection. Both static measurements and real-time monitoring of carbon and oxide surface impurities on optical elements in lithography tools should be achievable.

Examination of humidity effects on measured thickness and interfacial phenomena of exfoliated graphene on silicon dioxide via amplitude modulation atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jinkins, K.; Farina, L.; Wu, Y., E-mail: wuy@uwplatt.edu

2015-12-14

The properties of Few-Layer Graphene (FLG) change with the number of layers and Amplitude Modulation (AM) Atomic Force Microscopy (AFM) is commonly used to determine the thickness of FLG. However, AFM measurements have been shown to be sensitive to environmental conditions such as relative humidity (RH). In the present study, AM-AFM is used to measure the thickness and loss tangent of exfoliated graphene on silicon dioxide (SiO{sub 2}) as RH is increased from 10% to 80%. We show that the measured thickness of graphene is dependent on RH. The loss tangent values of the graphene and oxide regions are bothmore » affected by humidity, with generally higher loss tangent for graphene than SiO{sub 2}. As RH increases, we observe the loss tangent of both materials approaches the same value. We hypothesize that there is a layer of water trapped between the graphene and SiO{sub 2} substrate to explain this observation. Using this interpretation, the loss tangent images also indicate movement and change in this trapped water layer as RH increases, which impacts the measured thickness of graphene using AM-AFM.« less

The formation of hydrogen permeation barriers on steels by aluminising

NASA Astrophysics Data System (ADS)

Forcey, K. S.; Ross, D. K.; Wu, C. H.

1991-06-01

An extensive investigation has been carried out into the effectiveness of aluminised layers as permeation barriers on AISI 316L stainless and DIN 1.4914 martensitic steels. The study involved measurement of the hydrogen permeation rate through commercially aluminised steel discs of thicknesses in the range 1-1.6 mm, at temperatures between 250 and 600 °C and for an upstream hydrogen pressure of 10 5 Pa. The composition and structure of the aluminide layers were investigated by a number of techniques such as SEM, electron beam microprobe and X-ray diffraction. Accelerator based techniques such as RBS and NRA were employed to study the top micron or so of the surfaces of the samples. By these techniques it was found that the effectiveness of the permeation barrier depended on the formation of a thin surface oxide layer consisting of Al 2O 3. It was found that the permeation rate through the aluminised steels could be reduced by 3-4 orders of magnitude by forming a surface oxide layer up to a micron or so in thickness.

Photo-Sensitivity of Large Area Physical Vapor Deposited Mono and Bilayer MoS2 (Postprint)

DTIC Science & Technology

2014-07-01

layer MoS2 without any apparent rectifying junctions , making device fabrication straightforward. For bi-layers, no such effect was present, suggesting...layer MoS2 without any apparent rectifying junctions , making device fabrication straightforward. For bi-layers, no such effect was present, suggesting...pressure below 5×10−9 Torr for atomically sharp and clean interfaces. The mono and bi-layer specimens were grown on 100 nm thick thermal oxide coated silicon

Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride.

PubMed

Choi, David; Poudel, Nirakar; Park, Saungeun; Akinwande, Deji; Cronin, Stephen B; Watanabe, Kenji; Taniguchi, Takashi; Yao, Zhen; Shi, Li

2018-04-04

Scanning thermal microscopy measurements reveal a significant thermal benefit of including a high thermal conductivity hexagonal boron nitride (h-BN) heat-spreading layer between graphene and either a SiO 2 /Si substrate or a 100 μm thick Corning flexible Willow glass (WG) substrate. At the same power density, an 80 nm thick h-BN layer on the silicon substrate can yield a factor of 2.2 reduction of the hot spot temperature, whereas a 35 nm thick h-BN layer on the WG substrate is sufficient to obtain a factor of 4.1 reduction. The larger effect of the h-BN heat spreader on WG than on SiO 2 /Si is attributed to a smaller effective heat transfer coefficient per unit area for three-dimensional heat conduction into the thick, low-thermal conductivity WG substrate than for one-dimensional heat conduction through the thin oxide layer on silicon. Consequently, the h-BN lateral heat-spreading length is much larger on WG than on SiO 2 /Si, resulting in a larger degree of temperature reduction.

Impact of a boron rich layer on minority carrier lifetime degradation in boron spin-on dopant diffused n-type crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Singha, Bandana; Singh Solanki, Chetan

2016-03-01

In the production of n-type crystalline silicon solar cells with boron diffused emitters, the formation of a boron rich layer (BRL) is a common phenomenon and is largely responsible for bulk lifetime degradation. The phenomenon of BRL formation during diffusion of boron spin-on dopant and its impact on bulk lifetime degradation are investigated in this work. The BRL formed beneath the borosilicate glass layer has thicknesses varying from 10 nm-150 nm depending on the diffusion conditions. The effective and bulk minority carrier lifetimes, measured with Al2O3 deposited layers and a quinhydron-methanol solution, show that carrier lifetime degradation is proportional to the BRL thicknesses and their surface recombination velocities. The controlled diffusion processes and different oxidation techniques used in this work can partially reduce the BRL thickness and improve carrier lifetime by more than 10%. But for BRL thicknesses higher than 50 nm, different etching techniques further lower the carrier lifetime and the degradation in the device cannot be recovered.

Interconnects for intermediate temperature solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Huang, Wenhua

Presently, one of the principal goals of solid oxide fuel cells (SOFCs) research is to reduce the stack operating temperature to between 600 and 800°C. However, one of the principal technological barriers is the non-availability of a suitable material satisfying all of the stability requirements for the interconnect. In this work two approaches for intermediate temperature SOFC interconnects have been explored. The first approach comprises an interconnect consisting of a bi-layer structure, a p-type oxide (La0.96Sr0.08MnO 2.001/LSM) layer exposed to a cathodic environment, and an n-type oxide (Y0.08Sr0.88Ti0.95Al0.05O 3-delta/YSTA) layer exposed to anodic conditions. Theoretical analysis based on the bi-layer structure has established design criteria to implement this approach. The analysis shows that the interfacial oxygen partial pressure, which determines the interconnect stability, is independent of the electronic conductivities of both layers but dependent on the oxygen ion layer interconnects, the oxygen ion conductivities of LSM and YSTA were measured as a function of temperature and oxygen partial pressure. Based on the measured data, it has been determined that if the thickness of YSTA layer is around 0.1cm, the thickness of LSM layer should be around 0.6 mum in order to maintain the stability of LSM. In a second approach, a less expensive stainless steel interconnect has been studied. However, one of the major concerns associated with the use of metallic interconnects is the development of a semi-conducting or insulating oxide scale and chromium volatility during extended exposure to the SOFC operating environment. Dense and well adhered Mn-Cu spinet oxide coatings were successfully deposited on stainless steel by an electrophoretic deposition (EPD) technique. It was found that the Mn-Cu-O coating significantly reduced the oxidation rate of the stainless steel and the volatility of chromium. The area specific resistance (ASR) of coated Crofer 22 APU is expected to he around 1.2x10 -2Ocm2 after exposure to air at 800°C for 50000 hours. This demonstrates that Crofer 22 APU with CuMn1.8O 4 coating deposited by EPD is suitable for application as interconnects in intermediate temperature SOFCs.

Tuning temperature and size of hot spots and hot-spot arrays.

PubMed

Saïdi, Elika; Babinet, Nicolas; Lalouat, Loïc; Lesueur, Jérôme; Aigouy, Lionel; Volz, Sébastian; Labéguerie-Egéa, Jessica; Mortier, Michel

2011-01-17

By using scanning thermal microscopy, it is shown that nanoscale constrictions in metallic microwires deposited on an oxidized silicon substrate can be tuned in terms of temperature and confinement size. High-resolution temperature maps indeed show that submicrometer hot spots and hot-spot arrays are obtained when the SiO(2) layer thickness decreases below 100 nm. When the SiO(2) thickness becomes larger, heat is less confined in the vicinity of the constrictions and laterally spreads all along the microwire. These results are in good agreement with numerical simulations, which provide dependences between silica-layer thickness and nanodot shape and temperature. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Timing of Neogene Manganese Deposit Formation in the Paleo-Japan Sea, northeast Japan

NASA Astrophysics Data System (ADS)

Ito, T.; Orihashi, Y.; Yanagisawa, Y.; Sakai, S.; Motoyama, I.; Kamikuri, S. I.; Komuro, K.; Suzuki, K.

2017-12-01

The generation ages of the two Neogene manganese deposits in northeast Japan were determined by diatom and radiolarian biostratigraphic analyses and zircon U-Pb dating. The manganese deposits analyzed were from the Kitaichi and Maruyama mines in the Fukaura district, northeast Japan. Manganese oxide layers of 0.5 m (Kitaichi) and 1.5 m (Maruyama) in thickness were predominantly composed of todorokite and occur conformably within volcanogenic sediments, which stratigraphically had correlated to middle Miocene in previous studies. The ages of the manganese oxide layers were 12.4 Ma. There was no time gap between the Kitaichi and the Maruyama manganese oxide layers, between the manganese oxide layer and the underlying tuffaceous sandstone in the Kitaichi mine, or within the manganese oxide layer of ca. 1.5 m thickness in the Maruyama mine. On the other hand, the overlying tuffaceous sandstone was dated at 4.5 Ma. The results suggest that the manganese oxide layers were formed immediately after the deposition of the tuffaceous sandstone at 12.4 Ma and that the restricted supply of volcanogenic and/or other detrital matter had kept for a long time (ca. 7 m.y.). The timing of the manganese deposit generation, 12.4 Ma, is identical to the age of the base of the Onnagawa Stage on the Nishikurosawa Stage in the Neogene stratotype section on the Japan Sea side, northeast Japan. And this is equivalent to the age of the start of diatom blooming. Paleogeographically, the manganese oxide deposition happened in a shallower area on a paleo-hill or a small island surrounded by stagnant mid to deep basins with diatom and organically carbon-rich, laminated, and fine-grained mud. It is highly probable that upwelling of mid to deep water rich in both dissolved manganese and nutrients is the trigger for the manganese deposit generation in shallower areas and the deposition of diatomaceous sediments in mid and deep basins. Eustatic regression might be the reason for the short-term formation of manganese deposits in shallower areas compared to continuous sedimentation ( several million years) of diatomaceous and organic carbon-rich mud in the surrounding mid to deep basins.

Analysis and optimization of acoustic wave micro-resonators integrating piezoelectric zinc oxide layers

NASA Astrophysics Data System (ADS)

Mortada, O.; Zahr, A. H.; Orlianges, J.-C.; Crunteanu, A.; Chatras, M.; Blondy, P.

2017-02-01

This paper reports on the design, simulation, fabrication, and test results of ZnO-based contour-mode micro-resonators integrating piezoelectric zinc oxide (ZnO) layers. The inter-digitated (IDT) type micro-resonators are fabricated on ZnO films and suspended top of 2 μm thick silicon membranes using silicon-on insulator technology. We analyze several possibilities of increasing the quality factor (Q) and the electromechanical coupling coefficient (kt2) of the devices by varying the numbers and lengths of the IDT electrodes and using different thicknesses of the ZnO layer. We designed and fabricated IDTs of different finger numbers (n = 25, 40, 50, and 80) and lengths (L = 100/130/170/200 μm) for three different thicknesses of ZnO films (200, 600, and 800 nm). The measured Q factor confirms that reducing the length and the number of IDT fingers enables us to reach better electrical performances at resonant frequencies around 700 MHz. The extracted results for an optimized micro-resonator device having an IDT length of 100 μm and 40 finger electrodes show a Q of 1180 and a kt2 of 7.4%. We demonstrate also that the reduction of the ZnO thickness from 800 nm to 200 nm increases the quality factor from 430 to 1600, respectively, around 700 MHz. Experimental data are in very good agreement with theoretical simulations of the fabricated devices

High-Temperature Oxidation Behavior of Two Nickel-Based Superalloys Produced by Metal Injection Molding for Aero Engine Applications

NASA Astrophysics Data System (ADS)

Albert, Benedikt; Völkl, Rainer; Glatzel, Uwe

2014-09-01

For different high-temperature applications like aero engines or turbochargers, metal injection molding (MIM) of superalloys is an interesting processing alternative. For operation at high temperatures, oxidation behavior of superalloys produced by MIM needs to match the standard of cast or forged material. The oxidation behavior of nickel-based superalloys Inconel 713 and MAR-M247 in the temperature interval from 1073 K to 1373 K (800 °C to 1100 °C) is investigated and compared to cast material. Weight gain is measured discontinuously at different oxidation temperatures and times. Analysis of oxidized samples is done via SEM and EDX-measurements. MIM samples exhibit homogeneous oxide layers with a thickness up to 4 µm. After processing by MIM, Inconel 713 exhibits lower weight gain and thinner oxide layers than MAR-M247.

Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

PubMed Central

Marr, Isabella; Reiß, Sebastian; Hagen, Gunter; Moos, Ralf

2011-01-01

Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers. PMID:22164042

Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

NASA Astrophysics Data System (ADS)

Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin

2017-02-01

This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm2/V·s) compared with the ITZO-only TFTs (∼34 cm2/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and -2.39 V compared with 6.10 and -6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of EA were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO2 reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

Hydroxyapatite-coated Ti-6Al-4V part 2: the effects of post-deposition heat treatment at low temperatures.

PubMed

Lynn, A K; DuQuesnay, D L

2002-05-01

The present investigation explores the effects of a 90-h post-deposition annealing treatment at 400 degrees C in air on the crystallographic and chemical properties of a plasma-sprayed hydroxyapatite (HA) coating, the thickness and composition of the interfacial oxide layer, and the fatigue behaviour of the underlying Ti-6Al-4V substrate. X-ray diffraction analysis revealed that significant recovery of the crystalline HA structure occurred as a result of the treatment, however, as compared with results obtained through treatment at higher temperatures, recovery obtained through use of the present treatment was incomplete. X-ray photoelectron spectroscopy analysis showed no changes in the constituents of the oxide layer, with the oxide species TiO2, Al2O3, V2O5, V2O3, and VO2 present on both the as-sprayed and the heat-treated substrates. A change in film thickness was observed, however, as evidenced by a change in colour from opaque bronze to dark purple. The fatigue resistance of the substrate was found to be significantly reduced by the heat treatment, with the lives of heat-treated coupons with coatings of all thicknesses closely resembling those of as-sprayed coupons with thick HA coatings and uncoated stress-relieved coupons presented in Part I of this study. Stress relief was identified as the most likely cause of these reductions.

Thickness-dependent photocatalytic performance of graphite oxide for degrading organic pollutants under visible light.

PubMed

Oh, Junghoon; Chang, Yun Hee; Kim, Yong-Hyun; Park, Sungjin

2016-04-28

Photocatalysts use sustainable solar light energy to trigger various catalytic reactions. Metal-free nanomaterials have been suggested as cost-effective and environmentally friendly photocatalysts. In this work, we propose thickness-controlled graphite oxide (GO) as a metal-free photocatalyst, which is produced by exfoliating thick GO particles via stirring and sonication. All GO samples exhibit photocatalytic activity for degrading an organic pollutant, rhodamine B under visible light, and the thickest sample shows the best catalytic performance. UV-vis-NIR diffuse reflectance absorption spectra indicate that thicker GO samples absorb more vis-NIR light than thinner ones. Density-functional theory calculations show that GO has a much smaller band gap than that of single-layer graphene oxide, and thus suggest that the largely-reduced band gap is responsible for this trend of light absorption.

Nano-thick calcium oxide armed titanium: boosts bone cells against methicillin-resistant Staphylococcus aureus

NASA Astrophysics Data System (ADS)

Cao, Huiliang; Qin, Hui; Zhao, Yaochao; Jin, Guodong; Lu, Tao; Meng, Fanhao; Zhang, Xianlong; Liu, Xuanyong

2016-02-01

Since the use of systemic antibiotics for preventing acute biomaterial-associated infections (BAIs) may build up bacterial resistance and result in huge medical costs and unpredictable mortality, new precaution strategies are required. Here, it demonstrated that titanium armed with a nano-thick calcium oxide layer was effective on averting methicillin-resistant Staphylococcus aureus (MRSA) infections in rabbits. The calcium oxide layer was constructed by, firstly, injecting of metallic calcium into titanium via a plasma immersion ion implantation process, and then transforming the outer most surface into oxide by exposing to the atmosphere. Although the calcium oxide armed titanium had a relative low reduction rate (~74%) in growth of MRSA in vitro, it could markedly promote the osteogenic differentiation of bone marrow stem cells (BMSCs), restore local bone integration against the challenge of MRSA, and decrease the incidence of MRSA infection with a rate of 100% (compared to the titanium control). This study demonstrated for the first time that calcium, as one of the major elements in a human body, could be engineered to avert MRSA infections, which is promising as a safe precaution of disinfection for implantable biomedical devices.

Nano-thick calcium oxide armed titanium: boosts bone cells against methicillin-resistant Staphylococcus aureus

PubMed Central

Cao, Huiliang; Qin, Hui; Zhao, Yaochao; Jin, Guodong; Lu, Tao; Meng, Fanhao; Zhang, Xianlong; Liu, Xuanyong

2016-01-01

Since the use of systemic antibiotics for preventing acute biomaterial-associated infections (BAIs) may build up bacterial resistance and result in huge medical costs and unpredictable mortality, new precaution strategies are required. Here, it demonstrated that titanium armed with a nano-thick calcium oxide layer was effective on averting methicillin-resistant Staphylococcus aureus (MRSA) infections in rabbits. The calcium oxide layer was constructed by, firstly, injecting of metallic calcium into titanium via a plasma immersion ion implantation process, and then transforming the outer most surface into oxide by exposing to the atmosphere. Although the calcium oxide armed titanium had a relative low reduction rate (~74%) in growth of MRSA in vitro, it could markedly promote the osteogenic differentiation of bone marrow stem cells (BMSCs), restore local bone integration against the challenge of MRSA, and decrease the incidence of MRSA infection with a rate of 100% (compared to the titanium control). This study demonstrated for the first time that calcium, as one of the major elements in a human body, could be engineered to avert MRSA infections, which is promising as a safe precaution of disinfection for implantable biomedical devices. PMID:26899567

Nano-thick calcium oxide armed titanium: boosts bone cells against methicillin-resistant Staphylococcus aureus.

PubMed

Cao, Huiliang; Qin, Hui; Zhao, Yaochao; Jin, Guodong; Lu, Tao; Meng, Fanhao; Zhang, Xianlong; Liu, Xuanyong

2016-02-22

Since the use of systemic antibiotics for preventing acute biomaterial-associated infections (BAIs) may build up bacterial resistance and result in huge medical costs and unpredictable mortality, new precaution strategies are required. Here, it demonstrated that titanium armed with a nano-thick calcium oxide layer was effective on averting methicillin-resistant Staphylococcus aureus (MRSA) infections in rabbits. The calcium oxide layer was constructed by, firstly, injecting of metallic calcium into titanium via a plasma immersion ion implantation process, and then transforming the outer most surface into oxide by exposing to the atmosphere. Although the calcium oxide armed titanium had a relative low reduction rate (~74%) in growth of MRSA in vitro, it could markedly promote the osteogenic differentiation of bone marrow stem cells (BMSCs), restore local bone integration against the challenge of MRSA, and decrease the incidence of MRSA infection with a rate of 100% (compared to the titanium control). This study demonstrated for the first time that calcium, as one of the major elements in a human body, could be engineered to avert MRSA infections, which is promising as a safe precaution of disinfection for implantable biomedical devices.

Thickness dependence of the MoO3 blocking layers on ZnO nanorod-inverted organic photovoltaic devices

PubMed Central

Wang, Mingjun; Li, Yuan; Huang, Huihui; Peterson, Eric D.; Nie, Wanyi; Zhou, Wei; Zeng, Wei; Huang, Wenxiao; Fang, Guojia; Sun, Nanhai; Zhao, Xingzhong; Carroll, David L.

2011-01-01

Organic solar cells based on vertically aligned zinc oxide nanorod arrays (ZNR) in an inverted structure of indium tin oxide (ITO)∕ZNR∕poly(3-hexylthiophene): (6,6)-phenyl C61 butyric acid methyl ester(P3HT:PCBM)∕MoO3∕aluminum(Al) were studied. We found that the optimum MoO3 layer thickness condition of 20 nm, the MoO3 can effectively decrease the probability of bimolecular recombination either at the Al interface or within the active layer itself. For this optimum condition we get a power conversion efficiency of 2.15%, a short-circuit current density of 9.02 mA∕cm2, an open-circuit voltage of 0.55V, and a fill factor of 0.44 under 100 mW∕cm2 irradiation. Our investigations also show that the highly crystallized ZNR can create short and continuous pathways for electron transport and increase the contact area between the ZNR and the organic materials. PMID:21464889

Nano-Multiplication-Region Avalanche Photodiodes and Arrays

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata; Cunningham, Thomas

2008-01-01

Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be about 0.1 microns in diameter and between 0.3 and 0.4 nm high. The top layer in the reach-through structure would be heavily doped with electron-donor impurities (n+-doped) to make it act as a cathode. A layer beneath the cathode, between 0.1 and 0.2 nm thick, would be p-doped to a concentration .10(exp 17)cu cm. A thin n+-doped polysilicon pad would be formed on the top of the cathode to protect the cathode against erosion during a metal-silicon alloying step that would be part of the process of fabricating the array.

Corrosion behavior and surface structure of orthodontic Ni-Ti alloy wires.

PubMed

Iijima, M; Endo, K; Ohno, H; Yonekura, Y; Mizoguchi, I

2001-03-01

The corrosion behaviors of a commercial Ni-Ti alloy orthodontic wire and a polished plate with same composition in 0.9% NaCl and 1% lactic acid solutions were examined using an electrochemical technique, an analysis of released ions, and a surface analysis by X-ray photoelectron spectroscopy (XPS). The effect of polishing the wire on the corrosion was also examined. The XPS analysis demonstrated the presence of a thick oxide film mainly composed of TiO2 with trace amounts of Ni hydroxide, which had formed on the wire surface during the heat treatment and subsequent pickling processes. This oxide layer contributed to the higher resistance of the as-received wire to both general and localized corrosion in 0.9% NaCl solution, compared with that of the polished plate and the polished wire. The thick oxide layer, however, was not stable and did not protect the orthodontic wire from corrosion in 0.1% lactic acid solution.

Exploring the Nature of Cellulose Microfibrils

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Ying; Burger, Christian; Ma, Hongyang

2015-03-20

Ultrathin cellulose microfibril fractions were extracted from spruce wood powder using combined delignification, TEMPO-catalyzed oxidation, and sonication processes. Small-angle X-ray scattering of these microfibril fractions in a “dilute” aqueous suspension (concentration 0.077 wt %) revealed that their shape was in the form of nanostrip with 4 nm width and only about 0.5 nm thicknesses. We found that these dimensions were further confirmed by TEM and AFM measurements. The 0.5 nm thickness implied that the nanostrip could contain only a single layer of cellulose chains. At a higher concentration (0.15 wt %), SAXS analysis indicated that these nanostrips aggregated into amore » layered structure. The X-ray diffraction of samples collected at different preparation stages suggested that microfibrils were delaminated along the (110) planes from the Iβ cellulose crystals. Moreover, the degree of oxidation and solid-state 13C NMR characterizations indicated that, in addition to the surface molecules, some inner molecules of microfibrils were also oxidized, facilitating the delamination into cellulose nanostrips.« less

Exploring the nature of cellulose microfibrils.

PubMed

Su, Ying; Burger, Christian; Ma, Hongyang; Chu, Benjamin; Hsiao, Benjamin S

2015-04-13

Ultrathin cellulose microfibril fractions were extracted from spruce wood powder using combined delignification, TEMPO-catalyzed oxidation, and sonication processes. Small-angle X-ray scattering of these microfibril fractions in a "dilute" aqueous suspension (concentration 0.077 wt %) revealed that their shape was in the form of nanostrip with 4 nm width and only about 0.5 nm thicknesses. These dimensions were further confirmed by TEM and AFM measurements. The 0.5 nm thickness implied that the nanostrip could contain only a single layer of cellulose chains. At a higher concentration (0.15 wt %), SAXS analysis indicated that these nanostrips aggregated into a layered structure. The X-ray diffraction of samples collected at different preparation stages suggested that microfibrils were delaminated along the (11̅0) planes from the Iβ cellulose crystals. The degree of oxidation and solid-state (13)C NMR characterizations indicated that, in addition to the surface molecules, some inner molecules of microfibrils were also oxidized, facilitating the delamination into cellulose nanostrips.

Inkjet printing of metal-oxide-based transparent thin-film capacitors

NASA Astrophysics Data System (ADS)

Matavž, A.; Malič, B.; Bobnar, V.

2017-12-01

We report on the inkjet printing of transparent, thin-film capacitors (TTFCs) composed of indium-zinc-oxide electrodes and a tantalum-oxide-based dielectric on glass substrates. The printing parameters were adapted for the sequential deposition of functional layers, resulting in approximately 100-nm-thick transparent capacitors with a uniform thickness. The relatively high electrical resistivity of the electrodes is reflected in the frequency dispersive dielectric behaviour, which is explained in terms of an equivalent circuit. The resistivity of the electrode strongly decreases with the number of printing passes; consequently, any misalignment of the printed layers is detected in the measured response. At low frequency, the TTFCs show a stable intrinsic dielectric response and a high capacitance density of ˜280 nF/cm2. The good dielectric performance as well as the low leakage-current density (8 × 10-7 A/cm2 at 1 MV cm-1) of our capacitors indicates that inkjet printing can be used to produce all-printed, high-quality electrical devices.

CHARACTERISTICS OF ANODIC AND CORROSION FILMS ON ZIRCONIUM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Misch, R.D.

1960-05-01

Zirconium anodizes similarly to tungsten in respect to the change of interference colors with applied voltage. However, the oxide layer on tungsten cannot reach as great a thickness. Hafnium does not anodize in the same way as zirconium but is similar to tantalum. By measuring the interference color and capacitative thicknesses on zirconium (Grades I and III) and a 2.5 wt.% tin ailoy, the film was found to grow less rapidly in terms of capacitance than in terms of iaterference colors. This was interpreted to mean that cracks develop in the oxide as it thickens. The effect was most pronouncedmore » on Grade III zirconium and least pronounced on the tin alloy. The reduction in capacitative thickness was especially noticeable when white oxide appeared. Comparative measurements on Grade I zirconium and 2.5 wt.% tin alloy indicated that the thickness of the oxide film on the tin alloy (after 16 hours in water) increased more rapidly with temperature than the film on zirconium. Tin is believed to act in ways to counteract the tendency of the oxide to form cracks, and to produce vacancies which promote ionic diffusion. (auth)« less

Ultrasonic measurements of thin zinc layers on concrete

NASA Astrophysics Data System (ADS)

Jansen, Henri; Brooks, Bill; Nguyen, Vinh; Koretsky, Milo

2008-05-01

In order to protect bridges at the coast from corrosion, a thin layer (approximately 0.5 mm) of zinc is sprayed on the concrete of the bridge. When this zinc layer is electrically connected to the reinforcing steel (rebar) and placed at a positive potential with respect to the rebar, oxidation is favored at the zinc layer and reduced at the rebar. The resulting protection of the rebar fails when the zinc layer delaminates from the concrete or when the zinc oxidation product layer becomes too thick. We have used ultrasonic detection to investigate the properties of the zinc layer. This method has been applied very successfully in the semiconductor industry. We present the details of the method and the expected response. Unfortunately, we are not able to measure changes in the zinc layer, because either the frequency we use (10-20 MHz) is too low, or scattering in the concrete is a dominant effect.

A new record of silica-rich coating on carbonate substrates in southeast-central Iran: Constraints on geochemical signatures

NASA Astrophysics Data System (ADS)

Aftabi, Alijan; Atapour, Habibeh

2018-10-01

There exist few data on the geochemical signatures and occurrence of silica-rich coatings developed on siliceous carbonate substrates. The rock coatings in the Maran-e-Galu area in southeast-central Iran are composed of four layers; a lower thick layer (1 mm) of silica, a lower thin film of Fe-Mn oxide, an upper thick (1 mm) silica-rich layer, and an upper thin film of Fe-Mn oxide. Energy dispersive X-ray spectrometer (EDS), X-ray diffraction and bulk coating geochemistry data obtained by XRF and ICP-MS highlight that the 1-3 mm thick silica-rich coatings occur as a silica glaze of opal composition on the siliceous carbonate substrate. The coatings were probably formed by the interaction of rainfall, water vapor or dew with silicate and carbonate-rich detrital atmospheric dust, releasing H4SiO4with a pH of 5-10 in this semiarid-arid desert environment. This led to the formation of silica gels as well as minor Fe-Mn oxide gels by evaporation and supersaturation, and finally changed to the black brown silica glaze probably at ambient temperatures of >40 °C Major and minor element signatures are consistent with the known silica glazes, displaying enrichment in Ba, Sr, P, and LREEs with little to no Eu and Ce anomalies and a weak Tm anomaly. However, the very low content of aluminum oxide is well correlated with the known classified silica glaze of genetic type 1, reflecting the absence of detrital clay minerals. The low Fe and Mn contents in bulk coatings (3.6 and 10 magnitudes lower than crustal abundance, respectively) and lack of biochemical processes in the atmospheric dust highlight the semiarid-arid climate setting. We thereby conclude that a new variant of silica glaze of 1-3 mm thickness could form on siliceous carbonate substrates under an alkaline pH in semiarid-arid regions.

CMUTs with high-K atomic layer deposition dielectric material insulation layer.

PubMed

Xu, Toby; Tekes, Coskun; Degertekin, F

2014-12-01

Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Six)Ny)) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2) such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD Six)Ny) and 100-nm HfO2) insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure.

Protective effects of a grape-supplemented diet in a mouse model of retinal degeneration.

PubMed

Patel, Amit K; Davis, Ashley; Rodriguez, Maria Esperanza; Agron, Samantha; Hackam, Abigail S

2016-03-01

Retinal degenerations are a class of devastating blinding diseases that are characterized by photoreceptor dysfunction and death. In this study, we tested whether grape consumption, in the form of freeze-dried grape powder (FDGP), improves photoreceptor survival in a mouse model of retinal degeneration. Retinal degeneration was induced in mice by acute oxidative stress using subretinal injection of paraquat. The grape-supplemented diet was made by formulating base mouse chow with FDGP, corresponding to three daily human servings of grapes, and a control diet was formulated with equivalent sugar composition as FDGP (0.68% glucose-0.68% fructose mixture). Mice were placed on the diets at weaning for 5 wk before oxidative stress injury until analysis at 2 wk post-injection. Retinal function was measured using electroretinography, thickness of the photoreceptor layer was measured using optical coherence tomography, and rows of photoreceptor nuclei were counted on histologic sections. In mice fed the control diet, oxidative stress significantly reduced photoreceptor layer thickness and photoreceptor numbers. In contrast, retinal thickness and photoreceptor numbers were not reduced by oxidative stress in mice on the grape-supplemented diet, indicating significantly higher photoreceptor survival after injury than mice on the control diet. Furthermore, mice on the grape diet showed preservation of retinal function after oxidative stress injury compared with mice on the control diet. A diet supplemented with grapes rescued retinal structure and function in an oxidative stress-induced mouse model of retinal degeneration, which demonstrates the beneficial effect of grapes on photoreceptors. Copyright © 2016 Elsevier Inc. All rights reserved.

Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

NASA Technical Reports Server (NTRS)

Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.

1993-01-01

An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low temperature (500 C) is presented, and results are compared with x ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. It is shown that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. It was also noted that we do not observe any strain effect on the E(sub 1) critical point.

Nanostructured diamond layers enhance the infrared spectroscopy of biomolecules.

PubMed

Kozak, Halyna; Babchenko, Oleg; Artemenko, Anna; Ukraintsev, Egor; Remes, Zdenek; Rezek, Bohuslav; Kromka, Alexander

2014-03-04

We report on the fabrication and practical use of high-quality optical elements based on Au mirrors coated with diamond layers with flat, nanocolumnar, and nanoporous morphologies. Diamond layers (100 nm thickness) are grown at low temperatures (about 300 °C) from a methane, carbon dioxide, and hydrogen gas mixture by a pulsed microwave plasma system with linear antennas. Using grazing angle reflectance (GAR) Fourier transform infrared spectroscopy with p-polarized light, we compare the IR spectra of fetal bovine serum proteins adsorbed on diamond layers with oxidized (hydrophilic) surfaces. We show that the nanoporous diamond layers provide IR spectra with a signal gain of about 600% and a significantly improved sensitivity limit. This is attributed to its enhanced internal surface area. The improved sensitivity enabled us to distinguish weak infrared absorption peaks of <10-nm-thick protein layers and thereby to analyze the intimate diamond-molecule interface.

Influence of dielectric protective layer on laser damage resistance of gold coated gratings

NASA Astrophysics Data System (ADS)

Wu, Kepeng; Ma, Ping; Pu, Yunti; Xia, Zhilin

2016-03-01

Aiming at the problem that the damage threshold of gold coated grating is relatively low, a dielectric film is considered on the gold coated gratings as a protective layer. The thickness range of the protective layer is determined under the prerequisite that the diffraction efficiency of the gold coated grating is reduced to an acceptable degree. In this paper, the electromagnetic field, the temperature field and the stress field distribution in the grating are calculated when the silica and hafnium oxide are used as protective layers, under the preconditions of the electromagnetic field distribution of the gratings known. The results show that the addition of the protective layer changes the distribution of the electromagnetic field, temperature field and stress field in the grating, and the protective layer with an appropriate thickness can improve the laser damage resistance of the grating.

The optical properties of transferred graphene and the dielectrics grown on it obtained by ellipsometry

NASA Astrophysics Data System (ADS)

Kasikov, Aarne; Kahro, Tauno; Matisen, Leonard; Kodu, Margus; Tarre, Aivar; Seemen, Helina; Alles, Harry

2018-04-01

Graphene layers grown by chemical vapour deposition (CVD) method and transferred from Cu-foils to the oxidized Si-substrates were investigated by spectroscopic ellipsometry (SE), Raman and X-Ray Photoelectron Spectroscopy (XPS) methods. The optical properties of transferred CVD graphene layers do not always correspond to the ones of the exfoliated graphene due to the contamination from the chemicals used in the transfer process. However, the real thickness and the mean properties of the transferred CVD graphene layers can be found using ellipsometry if a real thickness of the SiO2 layer is taken into account. The pulsed laser deposition (PLD) and atomic layer deposition (ALD) methods were used to grow dielectric layers on the transferred graphene and the obtained structures were characterized using optical methods. The approach demonstrated in this work could be useful for the characterization of various materials grown on graphene.

Effects of Oxide Film on the Corrosion Resistance of Titanium Grade 7 in Fluoride-Containing NaCl Brines

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lian, T; Whalen, M T; Wong, L

2004-11-30

The effects of oxide film on the corrosion behavior of Titanium Grade 7 (0.12-0.25% Pd) in fluoride-containing NaCl brines have been investigated. With the presence of a 0.6 {micro}m thick oxide layer, the annealed Ti grade 7 exhibited a significant improvement on the anodic polarization behavior. However, the oxide film did not demonstrate sustainable corrosion resistance in fluoride-containing solutions.

Ultra-Shallow Depth Profiling of Arsenic Implants in Silicon by Hydride Generation-Inductively Coupled Plasma Atomic Emission Spectrometry

NASA Astrophysics Data System (ADS)

Matsubara, Atsuko; Kojima, Hisao; Itoga, Toshihiko; Kanehori, Keiichi

1995-08-01

High resolution depth profiling of arsenic (As) implanted into silicon wafers by a chemical technique is described. Silicon wafers are precisely etched through repeated oxidation by hydrogen peroxide solution and dissolution of the oxide by hydrofluoric acid solution. The etched silicon thickness is determined by inductively-coupled plasma atomic emission spectrometry (ICP-AES). Arsenic concentration is determined by hydride generation ICP-AES (HG-ICP-AES) with prereduction using potassium iodide. The detection limit of As in a 4-inch silicon wafer is 2.4×1018 atoms/cm3. The etched silicon thickness is controlled to less than 4±2 atomic layers. Depth profiling of an ultra-shallow As diffusion layer with the proposed method shows good agreement with profiling using the four-probe method or secondary ion mass spectrometry.

Optimization of the 3-Point Bending Failure of Anodized Aluminum Formed in Tartaric/Sulphuric Acid Using Doehlert Design

NASA Astrophysics Data System (ADS)

Bensalah, W.; Feki, M.; De-Petris Wery, M.; Ayedi, H. F.

2015-02-01

The bending failure of anodized aluminum in tartaric/sulphuric acid bath was modeled using Doehlert design. Bath temperature, anodic current density, sulphuric acid, and tartaric acid concentrations were retained as variables. Thickness measurements and 3-point bending experiments were conducted. The deflection at failure ( D f) and the maximum load ( F m) of each sample were, then, deducted from the corresponding flexural responses. The treatment of experimental results has established mathematical models of second degree reflecting the relation of cause and effect between the factors and the studied properties. The optimum path study of thickness, deflection at failure, and maximum load, showed that the three optima were opposite. Multicriteria optimization using the desirability function was achieved in order to maximize simultaneously the three responses. The optimum conditions were: C tar = 18.2 g L-1, T = 17.3 °C, J = 2.37 A dm-2, C sul = 191 g L-1, while the estimated response values were e = 57.7 µm, D f = 5.6 mm, and F m = 835 N. Using the established models, a mathematical correlation was found between deflection at failure and thickness of the anodic oxide layer. Before bending tests, aluminum oxide layer was examined by scanning electron microscopy (SEM) and atomic force microscopy. After tests, the morphology and the composition of the anodic oxide layer were inspected by SEM, optical microscopy, and glow-discharge optical emission spectroscopy.

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

NASA Astrophysics Data System (ADS)

Spiga, S.; Rao, R.; Lamagna, L.; Wiemer, C.; Congedo, G.; Lamperti, A.; Molle, A.; Fanciulli, M.; Palma, F.; Irrera, F.

2012-07-01

Al-doped ZrO2 (Al-ZrO2) films deposited by atomic layer deposition onto silicon substrates and the interface with the TaN metal gate are investigated. In particular, structural properties of as-grown and annealed films in the 6-26 nm thickness range, as well as leakage and capacitive behavior of metal-oxide-semiconductor stacks are characterized. As-deposited Al-ZrO2 films in the mentioned thickness range are amorphous and crystallize in the ZrO2 cubic phase after thermal treatment at 900 °C. Correspondingly, the dielectric constant (k) value increases from 20 ± 1 to 27 ± 2. The Al-ZrO2 layers exhibit uniform composition through the film thickness and are thermally stable on Si, whereas chemical reactions take place at the TaN/Al-ZrO2 interface. A transient capacitance technique is adopted for monitoring charge trapping and flat band instability at short and long time scales. The role of traps nearby the TaN/Al-ZrO2 interface is discussed and compared with other metal/high-k oxide films. Further, analytical modeling of the flat band voltage shift with a power-law dependence on time allows extracting features of bulk traps close to the silicon/oxide interface, which exhibit energy levels in the 1.4-1.9 eV range above the valence band of the Al-ZrO2.

Investigation of Stainless Steel Corrosion in Ultrahigh-Purity Water and Steam Systems by Surface Analytical Techniques

NASA Astrophysics Data System (ADS)

Dong, Xia; Iacocca, Ronald G.; Bustard, Bethany L.; Kemp, Craig A. J.

2010-02-01

Stainless steel pipes with different degrees of rouging and a Teflon®-coated rupture disc with severe corrosion were thoroughly investigated by combining multiple surface analytical techniques. The surface roughness and iron oxide layer thickness increase with increasing rouge severity, and the chromium oxide layer coexists with the iron oxide layer in samples with various degrees of rouging. Unlike the rouging observed for stainless steel pipes, the fast degradation of the rupture disc was caused by a crevice corrosion environment created by perforations in the protective Teflon coating. This failure analysis clearly shows the highly corrosive nature of ultrapure water used in the manufacture of pharmaceutical products, and demonstrates some of the unexpected corrosion mechanisms that can be encountered in these environments.

X-ray reflectivity of ruthenium nano-oxide layer in a CoFe-Ru-CoFe trilayer system

NASA Astrophysics Data System (ADS)

Asghari Zadeh, Saeid; Sutton, Mark; Altonian, Zaven; Mao, Ming; Lee, Chih-Ling

2006-03-01

A grazing incidence X-ray reflectivity technique is used to determine electron density profile(EDP) as a function of depth in CoFe-Ru-CoFe and CoFe-Ru nano oxide layer(NOL)-CoFe trilayers. Four trilayers with ruthenium thicknesses of 8,8.5 and 9 å.08cm and one with Ru8.5.05cmå.05cmNOL, prepared by a dc planetary sputtering system, were investigated. For all samples, EDP shows a central peak which is related to the Ru layer. Natural oxidation in all samples introduces a graded EDP of the top CoFe layer that decreases gradually to zero. The large surface resistivity of Ru8.5 å.05cm NOL compared to Ru 8.5å.08cm can be related to the remarkable difference between their EDP.

Low temperature formation of higher-k cubic phase HfO{sub 2} by atomic layer deposition on GeO{sub x}/Ge structures fabricated by in-situ thermal oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, R., E-mail: zhang@mosfet.t.u-tokyo.ac.jp; Department of Information Science and Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027; Huang, P.-C.

2016-02-01

We have demonstrated a low temperature formation (300 °C) of higher-k HfO{sub 2} using atomic layer deposition (ALD) on an in-situ thermal oxidation GeO{sub x} interfacial layer. It is found that the cubic phase is dominant in the HfO{sub 2} film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO{sub 2} film on a 1-nm-thick GeO{sub x} form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO{sub 2} can be induced by the formation of six-fold crystalline GeO{sub x} structures in the underlying GeO{sub x}more » interfacial layer.« less

Nanometer-Scale Epitaxial Strain Release in Perovskite Heterostructures Using 'SrAlOx' Sliding Buffer Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bell, Christopher

2011-08-11

We demonstrate the strain release of LaAlO{sub 3} epitaxial film on SrTiO{sub 3} (001) by inserting ultra-thin 'SrAlO{sub x}' buffer layers. Although SrAlO{sub x} is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlO{sub x}, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO{sub 3} filmand the SrTiO{sub 3} substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite film farmore » below the thermodynamic critical thickness. A central issue in heteroepitaxial filmgrowth is the inevitable difference in lattice constants between the filmand substrate. Due to this lattice mismatch, thin film are subjected to microstructural strain, which can have a significan effect on the filmproperties. This challenge is especially prominent in the rapidly developing fiel of oxide electronics, where much interest is focused on incorporating the emergent physical properties of oxides in devices. Although strain can be used to great effect to engineer unusual ground states, it is often deleterious for bulk first-orde phase transitions, which are suppressed by the strain and symmetry constraints of the substrate. While there are some reports discussing the control of the lattice mismatch in oxides using thick buffer layers, the materials choice, lattice-tunable range, and control of misfit dislocations are still limited. In this Letter, we report the fabrication of strain-relaxed LaAlO{sub 3} (LAO) thin film on SrTiO{sub 3} (STO) (001) using very thin 'SrAlO{sub x}' (SAO) buffer layers. Whereas for 1 or 2 pseudo-perovskite unit cells (uc) of SAO, the subsequent LAO filmis strained to the substrate, at a critical thickness of 3 uc the SAO interlayer abruptly relieves the lattice mismatch between the LAO and the STO, although maintaining the relative crystalline orientation between the filmand the substrate. For 4 uc or greater, the perovskite epitaxial template is lost and the LAO filmis amorphous. These results suggest that metastable interlayers can be used for strain release on the nanometer scale.« less

Temperature Evolution During Plane Strain Compression Of Tertiary Oxide Scale On Steel

NASA Astrophysics Data System (ADS)

Suarez, L.; Vanden Eynde, X.; Lamberigts, M.; Houbaert, Y.

2007-04-01

An oxide scale layer always forms at the steel surface during hot rolling. This scale layer separates the work roll from the metal substrate. Understanding the deformation behaviour and mechanical properties of the scale is of great interest because it affects the frictional conditions during hot rolling and the heat-transfer behaviour at the strip-roll interface. A thin wustite scale layer (<20 μm) was created under controlled conditions in an original laboratory device adequately positioned in a compression testing machine to investigate plane strain compression. Oxidation tests were performed on an ULC steel grade. After the oxide growth at 1050°C, plane strain compression (PSC) was performed immediately to simulate the hot rolling process. PSC experiments were performed at a deformation temperature of 1050°C, with reduction ratios from 5 to 70%, and strain rates of 10s-1 under controlled gas atmospheres. Results show that for wustite, ductility is obvious at 1050°C. Even after deformation oxide layers exhibit good adhesion to the substrate and homogeneity over the thickness. The tool/sample temperature difference seems to be the reason for the unexpected ductile behaviour of the scale layer.

Morphology, mechanical stability, and protective properties of ultrathin gallium oxide coatings.

PubMed

Lawrenz, Frank; Lange, Philipp; Severin, Nikolai; Rabe, Jürgen P; Helm, Christiane A; Block, Stephan

2015-06-02

Ultrathin gallium oxide layers with a thickness of 2.8 ± 0.2 nm were transferred from the surface of liquid gallium onto solid substrates, including conjugated polymer poly(3-hexylthiophene) (P3HT). The gallium oxide exhibits high mechanical stability, withstanding normal pressures of up to 1 GPa in contact mode scanning force microscopy imaging. Moreover, it lowers the rate of photodegradation of P3HT by 4 orders of magnitude, as compared to uncovered P3HT. This allows us to estimate the upper limits for oxygen and water vapor transmission rates of 0.08 cm(3) m(-2) day(-1) and 0.06 mg m(-2) day(-1), respectively. Hence, similar to other highly functional coatings such as graphene, ultrathin gallium oxide layers can be regarded as promising candidates for protective layers in flexible organic (opto-)electronics and photovoltaics because they offer permeation barrier functionalities in conjunction with high optical transparency.

Heat treatment condition of EN AW-7075 influencing the anodic oxidation process and coating properties

NASA Astrophysics Data System (ADS)

Morgenstern, R.; Scharf, I.; Lampke, T.

2018-06-01

The age-hardenable aluminium alloy EN AW-7075 exhibits outstanding specific mechanical properties and therefore offers a high potential for lightweight construction. Anodising in aqueous oxalic acid solutions is suitable to produce a protective oxide ceramic conversion layer on this alloy. This study examines the influence of the precipitation state of the substrate alloy on microstructure and properties of anodic oxide layers. Therefore, EN AW-7075 sheets in the heat treatment conditions T4, T6 and T73 were anodized in 0.8 M oxalic acid solution at constant voltage. The current efficiency was determined on the basis of the electrical charge quantity, coating thickness and coating mass. Instrumented indentation tests were applied in order to evaluate the coating hardness. The microstructure of the anodic oxide layer was illustrated using field emission electron microscopy. It was shown that the current efficiency strongly depends on the heat treatment condition.

The interaction of small metal particles with refractory oxide supports

NASA Technical Reports Server (NTRS)

Park, C.; Heinemann, K.

1985-01-01

Islands and continuous layers of Pd were grown in UHV on Mo and MoO subtrates. As-deposited Pd islands and layers exhibited bulk Pd adsorption properties for CO when the Pd had been deposited at RT and at thicknesses exceeding 3 ML. However, CO adsorption was drastically reduced upon annealing. This deactivation was interpreted in terms of substrate/support interaction involving the diffusion of substrate species toward the Pd surface, using AES, TPD, and work function measurement techniques. A study of the growth and annealing behavior of Pd on Mo(110) was made for thicknesses up to 12 monolayers and substrate temperatures up to 1300K, using AES, XPS, LEED, and work function measurements. At low tempertures Pd formed a monolayer without alloying. In thick layers (12 ML) annealed about 700 K, Mo diffusion into the Pd layer and alloying were noted. Such layers remained continuous up to 1100 K. Thinner Pd layers were less stable and started coalescing upon annealing to as little as 550 K. Significant changes in Pd Auger peak shape, as well as shifts of Pd core levels, were observed during layer growth and annealing.

Analysis of passivated A-286 stainless steel surfaces for mass spectrometer inlet systems by Auger electron and X-ray photoelectron spectroscopy and scanning electron microscopy

DOE PAGES

Ajo, Henry; Blankenship, Donnie; Clark, Elliot

2014-07-25

In this study, various commercially available surface treatments are being explored for use on stainless steel components in mass spectrometer inlet systems. Type A-286 stainless steel coupons, approximately 12.5 mm in diameter and 3 mm thick, were passivated with one of five different surface treatments; an untreated coupon served as a control. The surface and near-surface microstructure and chemistry of the coupons were investigated using sputter depth profiling using Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy (SEM). All the surface treatments studied appeared to change the surface morphology dramatically, as evidenced by lack of tool marks onmore » the treated samples in SEM images. In terms of the passivation treatment, Vendors A-D appeared to have oxide layers that were very similar in thickness to each other (0.7–0.9 nm thick), as well as to the untreated samples (the untreated sample oxide layers appeared to be somewhat larger). Vendor E’s silicon coating appears to be on the order of 200 nm thick.« less

Effect of shell thickness on the exchange bias blocking temperature and coercivity in Co-CoO core-shell nanoparticles

NASA Astrophysics Data System (ADS)

Thomas, S.; Reethu, K.; Thanveer, T.; Myint, M. T. Z.; Al-Harthi, S. H.

2017-08-01

The exchange bias blocking temperature distribution of naturally oxidized Co-CoO core-shell nanoparticles exhibits two distinct signatures. These are associated with the existence of two magnetic entities which are responsible for the temperature dependence of an exchange bias field. One is from the CoO grains which undergo thermally activated magnetization reversal. The other is from the disordered spins at the Co-CoO interface which exhibits spin-glass-like behavior. We investigated the oxide shell thickness dependence of the exchange bias effect. For particles with a 3 nm thick CoO shell, the predominant contribution to the temperature dependence of exchange bias is the interfacial spin-glass layer. On increasing the shell thickness to 4 nm, the contribution from the spin-glass layer decreases, while upholding the antiferromagnetic grain contribution. For samples with a 4 nm CoO shell, the exchange bias training was minimal. On the other hand, 3 nm samples exhibited both the training effect and a peak in coercivity at an intermediate set temperature Ta. This is explained using a magnetic core-shell model including disordered spins at the interface.

Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu; Quesnel, David J.; Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627

2015-12-21

Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical propertiesmore » of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the films reduces the activation volume for yielding.« less

An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells.

PubMed

Seo, Seongrok; Park, Ik Jae; Kim, Myungjun; Lee, Seonhee; Bae, Changdeuck; Jung, Hyun Suk; Park, Nam-Gyu; Kim, Jin Young; Shin, Hyunjung

2016-06-02

NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis.

Enhancing Performance of Large-Area Organic Solar Cells with Thick Film via Ternary Strategy.

PubMed

Zhang, Jianqi; Zhao, Yifan; Fang, Jin; Yuan, Liu; Xia, Benzheng; Wang, Guodong; Wang, Zaiyu; Zhang, Yajie; Ma, Wei; Yan, Wei; Su, Wenming; Wei, Zhixiang

2017-06-01

Large-scale fabrication of organic solar cells requires an active layer with high thickness tolerability and the use of environment-friendly solvents. Thick films with high-performance can be achieved via a ternary strategy studied herein. The ternary system consists of one polymer donor, one small molecule donor, and one fullerene acceptor. The small molecule enhances the crystallinity and face-on orientation of the active layer, leading to improved thickness tolerability compared with that of a polymer-fullerene binary system. An active layer with 270 nm thickness exhibits an average power conversion efficiency (PCE) of 10.78%, while the PCE is less than 8% with such thick film for binary system. Furthermore, large-area devices are successfully fabricated using polyethylene terephthalate (PET)/Silver gride or indium tin oxide (ITO)-based transparent flexible substrates. The product shows a high PCE of 8.28% with an area of 1.25 cm 2 for a single cell and 5.18% for a 20 cm 2 module. This study demonstrates that ternary organic solar cells exhibit great potential for large-scale fabrication and future applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Induced spin-polarization of EuS at room temperature in Ni/EuS multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poulopoulos, P., E-mail: poulop@upatras.gr; Materials Science Department, University of Patras, 26504 Patras; Goschew, A.

2014-03-17

Ni/EuS multilayers with excellent multilayer sequencing are deposited via e-beam evaporation on the native oxide of Si(100) wafers at 4 × 10{sup −9} millibars. The samples have very small surface and interface roughness and show sharp interfaces. Ni layers are nanocrystalline 4–8 nm thick and EuS layers are 2–4 nm thick and are either amorphous or nanocrystalline. Unlike for Co/EuS multilayers, all Eu ions are in divalent (ferromagnetic) state. We show a direct antiferromagnetic coupling between EuS and Ni layers. At room temperature, the EuS layers are spin-polarized due to the proximity of Ni. Therefore, Ni/EuS is a candidate for room-temperature spintronics applications.

Microscale Soft Patterning for Solution Processable Metal Oxide Thin Film Transistors.

PubMed

Jung, Sang Wook; Chae, Soo Sang; Park, Jee Ho; Oh, Jin Young; Bhang, Suk Ho; Baik, Hong Koo; Lee, Tae Il

2016-03-23

We introduce a microscale soft pattering (MSP) route utilizing contact printing of chemically inert sub-nanometer thick low molecular weight (LMW) poly(dimethylsiloxane) (PDMS) layers. These PDMS layers serve as a release agent layer between the n-type Ohmic metal and metal oxide semiconductors (MOSs) and provide a layer that protects the MOS from water in the surrounding environment. The feasibility of our MSP route was experimentally demonstrated by fabricating solution processable In2O3, IZO, and IGZO TFTs with aluminum (Al), a typical n-type Ohmic metal. We have demonstrated patterning gaps as small as 13 μm. The TFTs fabricated using MSP showed higher field-effect-mobility and lower hysteresis in comparison with those made using conventional photolithography.

Materials science in pre-plated leadframes for electronic packages

NASA Astrophysics Data System (ADS)

Liu, Lilin

Au/Pd/Ni pre-plated leadframes (PPF) are high performance frames for accommodating high-end electronic packages. Cost and reliability are major concerns in their wide application. The present work, from a materials science point view, deepens the understanding of PPFs, optimizes the conventional PPFs, develops a novel PPF architecture and models the residual stress relaxation in heteroepitaxial thin films. The wire pull test, the solderability test, and High-Resolution Transmission Electron Microscopy (HRTEM) were employed to characterize the PPFs in order to understand the relationship between performance and microstructure. We optimized the electroplating profiles and determined the minimum thickness of the Pd layer with the PPF performance satisfying the industry standards. Further increasing the Pd layer thickness beyond the critical thickness will not enhance the performance more, but increase the product cost. With the optimized electroplating profile, the electroplated Au layer is epitaxially deposited on the Pd layer, and so does the Pd layer on the Ni layer. Misfit dislocations and nanotwins are present at the interface between the Pd and Ni layers, which are generated to release the about 10.4% misfit strain between the Pd and Ni lattices. This work demonstrates that the electro-deposition technique can electroplate epitaxy-like Pd films on the highly (200) textured Ni films, which are grown on the Cu substrates. A novel technique for impeding Cu out-diffusion in Cu alloy based pre-plated leadframes was developed by electroplating a 3-4 nm thick Sn layer on a Cu alloy base prior to electroplating a Ni layer. A 10-14 nm thick epitaxy-like and dense (Cu,Ni)3Sn intermetallic compound (IMC) layer is automatically formed en route of diffuse reaction, which leads to a drastic reduction in Cu out-diffusion and hence improves significantly the protection of the leadframes against oxidation and corrosion attack. The oxidation behaviours were quantified by Electron Diffraction X-ray (EX) incorporated in Scanning Electron Microscopy (SEM) in the present work, which is a good complementary to the traditional weight gain test by a balance. A diffusion/oxidation model was developed to estimate the effective diffusion coefficient of Cu in the formed IMC nanolayers. The estimated Cu diffusion coefficient in the IMC interlayer is about 1.6x10 -22m2/s at 250°C, which is around 7~11 orders lower than the interdiffusion coefficients for eta- Cu6Sn5 and epsilon- Cu3Sn phases at corresponding temperatures. Based on the dislocation theory of twinning, analytical solutions by using the hybrid superposition and Fourier transformation approach were derived for the calculation of various energies involved in the misfit twinning process. For a given epilayer thickness and lattice mismatch strain, the twin formation energy should reach its minimum to determine the twin width and a zero minimum formation energy determines the critical thickness for misfit twinning. The effect of elastic mismatch between the epilayer and the substrate on the critical thickness was studied comprehensively, revealing that an elastically soft epilayer has a large critical thickness. Moreover, a misfit-twin-and-perfect-dislocation predominance chart is constructed to predict the predominant regions of misfit twinning and perfect dislocation in the mismatch strain and the specific twin boundary energy domain. Multiple misfit twins in epilayer/substrate systems were studied by summing up the stress and displacement fields of individual twins. In principle, the energy minimization approach can be applied to multiple misfit twins, although only periodic arrays of parallel and alternating twins were investigated here in detail. The equilibrium twin width and equilibrium twin spacing of a periodic array of twins represent the misfit twin morphology. The theoretical results indicate that the difference in elastic constants between an epilayer and its substrate has great effects on the morphology of equilibrium twins. The theoretical predictions agree with experimental observations.

Investigations into the impact of various substrates and ZnO ultra thin seed layers prepared by atomic layer deposition on growth of ZnO nanowire array

PubMed Central

2012-01-01

The impact of various substrates and zinc oxide (ZnO) ultra thin seed layers prepared by atomic layer deposition on the geometric morphology of subsequent ZnO nanowire arrays (NWs) fabricated by the hydrothermal method was investigated. The investigated substrates included B-doped ZnO films, indium tin oxide films, single crystal silicon (111), and glass sheets. Scanning electron microscopy and X-ray diffraction measurements revealed that the geometry and aligment of the NWs were controlled by surface topography of the substrates and thickness of the ZnO seed layers, respectively. According to atomic force microscopy data, we suggest that the substrate, fluctuate amplitude and fluctuate frequency of roughness on ZnO seed layers have a great impact on the alignment of the resulting NWs, whereas the influence of the seed layers' texture was negligible. PMID:22759838

CMOS Imager Has Better Cross-Talk and Full-Well Performance

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Cunningham, Thomas J.

2011-01-01

A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.

Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.

The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A modelmore » of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.« less

Tuning SPT-3G Transition-Edge-Sensor Electrical Properties with a Four-Layer Ti-Au-Ti-Au Thin-Film Stack

NASA Astrophysics Data System (ADS)

Carter, F. W.; Ade, P. A. R.; Ahmed, Z.; Anderson, A. J.; Austermann, J. E.; Avva, J. S.; Thakur, R. Basu; Bender, A. N.; Benson, B. A.; Carlstrom, J. E.; Cecil, T.; Chang, C. L.; Cliche, J. F.; Cukierman, A.; Denison, E. V.; de Haan, T.; Ding, J.; Divan, R.; Dobbs, M. A.; Dutcher, D.; Everett, W.; Foster, A.; Gannon, R. N.; Gilbert, A.; Groh, J. C.; Halverson, N. W.; Harke-Hosemann, A. H.; Harrington, N. L.; Henning, J. W.; Hilton, G. C.; Holzapfel, W. L.; Huang, N.; Irwin, K. D.; Jeong, O. B.; Jonas, M.; Khaire, T.; Kofman, A. M.; Korman, M.; Kubik, D.; Kuhlmann, S.; Kuo, C. L.; Kutepova, V.; Lee, A. T.; Lowitz, A. E.; Meyer, S. S.; Michalik, D.; Miller, C. S.; Montgomery, J.; Nadolski, A.; Natoli, T.; Nguyen, H.; Noble, G. I.; Novosad, V.; Padin, S.; Pan, Z.; Pearson, J.; Posada, C. M.; Rahlin, A.; Ruhl, J. E.; Saunders, L. J.; Sayre, J. T.; Shirley, I.; Shirokoff, E.; Smecher, G.; Sobrin, J. A.; Stan, L.; Stark, A. A.; Story, K. T.; Suzuki, A.; Tang, Q. Y.; Thompson, K. L.; Tucker, C.; Vale, L. R.; Vanderlinde, K.; Vieira, J. D.; Wang, G.; Whitehorn, N.; Yefremenko, V.; Yoon, K. W.; Young, M. R.

2018-04-01

We have developed superconducting Ti transition-edge sensors with Au protection layers on the top and bottom for the South Pole Telescope's third-generation receiver (a cosmic microwave background polarimeter, due to be upgraded this austral summer of 2017/2018). The base Au layer (deposited on a thin Ti glue layer) isolates the Ti from any substrate effects; the top Au layer protects the Ti from oxidation during processing and subsequent use of the sensors. We control the transition temperature and normal resistance of the sensors by varying the sensor width and the relative thicknesses of the Ti and Au layers. The transition temperature is roughly six times more sensitive to the thickness of the base Au layer than to that of the top Au layer. The normal resistance is inversely proportional to sensor width for any given film configuration. For widths greater than five micrometers, the critical temperature is independent of width.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Binzhi; Chopdekar, Rajesh V.; N'Diaye, Alpha T.

The impact of interfacial electronic reconstruction on the magnetic characteristics of La0.7Sr0.3CoO3 (LSCO)/La0.7Sr0.3MnO3 (LSMO) superlattices was investigated as a function of layer thickness using a combination of soft x-ray magnetic spectroscopy and bulk magnetometry. We found that the magnetic properties of the LSCO layers are impacted by two competing electronic interactions occurring at the LSCO/substrate and LSMO/LSCO interfaces. For thin LSCO layers (< 5 nm), the heterostructures exist in a highly coupled state where the chemically distinct layers behave as a single magnetic compound with magnetically active Co2+ ions. As the LSCO thickness increases, a high coercivity LSCO layer developsmore » which biases a low coercivity layer, which is composed not only of the LSMO layer, but also an interfacial LSCO layer. These results suggest a new route to tune the magnetic properties of transition metal oxide heterostructures through careful control of the interface structure.« less

Biocompatible Nb2O5 thin films prepared by means of the sol-gel process.

PubMed

Velten, D; Eisenbarth, E; Schanne, N; Breme, J

2004-04-01

Thin biocompatible oxide films with an optimised composition and structure on the surface of titanium and its alloys can improve the implant integration. The preparation of these thin oxide layers with the intended improvement of the surface properties can be realised by means of the sol-gel process. Nb2O5 is a promising coating material for this application because of its extremely high corrosion resistance and thermodynamic stability. In this study, thin Nb2O5 layers ( < 200 nm) were prepared by spin coating of polished discs of cp-titanium with a sol consisting of a mixture of niobium ethoxide, butanol and acetylacetone. The thickness, phase composition, corrosion resistance and the wettability of the oxide layers were determined after an optimisation of the processing parameters for deposition of oxide without any organic impurities. The purity of the oxide layer is an important aspect in order to avoid a negative response to the cell adhesion. The biocompatibility of the oxide layers which was investigated by in vitro tests (morphology, proliferation rate, WST-1, cell spreading) is improved as compared to uncoated and TiO2 sol-gel coated cp-titanium concerning the spreading of cells, collagen I synthesis and wettability.

Hybrid ZnO/phthalocyanine photovoltaic device with highly resistive ZnO intermediate layer.

PubMed

Izaki, Masanobu; Chizaki, Ryo; Saito, Takamasa; Murata, Kazufumi; Sasano, Junji; Shinagawa, Tsutomu

2013-10-09

We report a hybrid photovoltaic device composed of a 3.3 eV bandgap zinc oxide (ZnO) semiconductor and metal-free phthalocyanine layers and the effects of the insertion of the highly resistive ZnO buffer layer on the electrical characteristics of the rectification feature and photovoltaic performance. The hybrid photovoltaic devices have been constructed by electrodeposition of the 300 nm thick ZnO layer in a simple zinc nitrate aqueous solution followed by vacuum evaporation of 50-400 nm thick-phthalocyanine layers. The ZnO layers with the resistivity of 1.8 × 10(3) and 1 × 10(8) Ω cm were prepared by adjusting the cathodic current density and were installed into the hybrid photovoltaic devices as the n-type and buffer layer, respectively. The phthalocyanine layers with the characteristic monoclinic lattice showed a characteristic optical absorption feature regardless of the thickness, but the preferred orientation changed depending on the thickness. The ZnO buffer-free hybrid 50 nm thick phthalocyanine/n-ZnO photovoltaic device showed a rectification feature but possessed a poor photovoltaic performance with a conversion efficiency of 7.5 × 10(-7) %, open circuit voltage of 0.041 V, and short circuit current density of 8.0 × 10(-5) mA cm(-2). The insertion of the ZnO buffer layer between the n-ZnO and phthalocyanine layers induced improvements in both the rectification feature and photovoltaic performance. The excellent rectification feature with a rectification ratio of 3188 and ideally factor of 1.29 was obtained for the hybrid 200 nm thick phthalocyanine/ZnO buffer/n-ZnO photovoltaic device, and the hybrid photovoltaic device possessed an improved photovoltaic performance with the conversion efficiency of 0.0016%, open circuit voltage of 0.31 V, and short circuit current density of 0.015 mA cm(-2).

Organic solar cells using a ZnO/Cu/ZnO anode deposited by ion beam sputtering at room temperature for flexible devices.

PubMed

El Hajj, Ahmad; Lucas, Bruno; Barbot, Anthony; Antony, Rémi; Ratier, Bernard; Aldissi, Matt

2013-07-01

The development of indium-free transparent conductive oxides (TCOs) on polymer substrates for flexible devices requires deposition at low temperatures and a limited thermal treatment. In this paper, we investigated the optical and electrical properties of ZnO/Cu/ZnO multi-layer electrodes obtained by ion beam sputtering at room temperature for flexible optoelectronic devices. This multilayer structure has the advantage of adjusting the layer thickness to favor antireflection and surface plasmon resonance of the metallic layer. We found that the optimal electrode is made up of a 10 nm-thick Cu layer between two 40 nm-thick ZnO layers, which results in a sheet resistance of 12 omega/(see symbol), a high transmittance of 85% in the visible range, and the highest figure of merit of 5.4 x 10(-3) (see symbol)/omega. A P3HT:PCBM-based solar cell showed a power conversion efficiency (PCE) of 2.26% using the optimized ZnO (40 nm)/Cu (10 nm)/ZnO (40 nm) anode.

Interfacial Metal-Oxide Interactions in Resistive Switching Memories.

PubMed

Cho, Deok-Yong; Luebben, Michael; Wiefels, Stefan; Lee, Kug-Seung; Valov, Ilia

2017-06-07

Metal oxides are commonly used as electrolytes for redox-based resistive switching memories. In most cases, non-noble metals are directly deposited as ohmic electrodes. We demonstrate that irrespective of bulk thermodynamics predictions an intermediate oxide film a few nanometers in thickness is always formed at the metal/insulator interface, and this layer significantly contributes to the development of reliable switching characteristics. We have tested metal electrodes and metal oxides mostly used for memristive devices, that is, Ta, Hf, and Ti and Ta 2 O 5 , HfO 2 , and SiO 2 . Intermediate oxide layers are always formed at the interfaces, whereas only the rate of the electrode oxidation depends on the oxygen affinity of the metal and the chemical stability of the oxide matrix. Device failure is associated with complete transition of short-range order to a more disordered main matrix structure.

Determination of sulfuric acid concentration for anti-cavitation characteristics of Al alloy by two step anodizing process to forming nano porous.

PubMed

Lee, Seung-Jun; Kim, Seong-Kweon; Jeong, Jae-Yong; Kim, Seong-Jong

2014-12-01

Al alloy is a highly active metal but forms a protective oxide film having high corrosion resistance in atmosphere environment. However, the oxide film is not suitable for practical use, since the thickness of the film is not uniform and it is severly altered with formation conditions. This study focused on developing an aluminum anodizing layer having hardness, corrosion resistance and abrasion resistance equivalent to a commercial grade protective layer. Aluminum anodizing layer was produced by two-step aluminum anodizing oxide (AAO) process with different sulfuric acid concentrations, and the cavitation characteristics of the anodized coating layer was investigated. In hardness measurement, the anodized coating layer produced with 15 vol.% of sulfuric acid condition had the highest value of hardness but exhibited poor cavitation resistance due to being more brittle than those with other conditions. The 10 vol.% of sulfuric acid condition was thus considered to be the optimum condition as it had the lowest weight loss and damage depth.

Multi-layer thin-film electrolytes for metal supported solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Haydn, Markus; Ortner, Kai; Franco, Thomas; Uhlenbruck, Sven; Menzler, Norbert H.; Stöver, Detlev; Bräuer, Günter; Venskutonis, Andreas; Sigl, Lorenz S.; Buchkremer, Hans-Peter; Vaßen, Robert

2014-06-01

A key to the development of metal-supported solid oxide fuel cells (MSCs) is the manufacturing of gas-tight thin-film electrolytes, which separate the cathode from the anode. This paper focuses the electrolyte manufacturing on the basis of 8YSZ (8 mol.-% Y2O3 stabilized ZrO2). The electrolyte layers are applied by a physical vapor deposition (PVD) gas flow sputtering (GFS) process. The gas-tightness of the electrolyte is significantly improved when sequential oxidic and metallic thin-film multi-layers are deposited, which interrupt the columnar grain structure of single-layer electrolytes. Such electrolytes with two or eight oxide/metal layers and a total thickness of about 4 μm obtain leakage rates of less than 3 × 10-4 hPa dm3 s-1 cm-2 (Δp: 100 hPa) at room temperature and therefore fulfill the gas tightness requirements. They are also highly tolerant with respect to surface flaws and particulate impurities which can be present on the graded anode underground. MSC cell tests with double-layer and multilayer electrolytes feature high power densities more than 1.4 W cm-2 at 850 °C and underline the high potential of MSC cells.

Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

PubMed

Cho, Heesook; Yoo, Hana; Park, Soojin

2010-05-18

Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

Design and Fabrication of High-Efficiency CMOS/CCD Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2007-01-01

An architecture for back-illuminated complementary metal oxide/semiconductor (CMOS) and charge-coupled-device (CCD) ultraviolet/visible/near infrared- light image sensors, and a method of fabrication to implement the architecture, are undergoing development. The architecture and method are expected to enable realization of the full potential of back-illuminated CMOS/CCD imagers to perform with high efficiency, high sensitivity, excellent angular response, and in-pixel signal processing. The architecture and method are compatible with next-generation CMOS dielectric-forming and metallization techniques, and the process flow of the method is compatible with process flows typical of the manufacture of very-large-scale integrated (VLSI) circuits. The architecture and method overcome all obstacles that have hitherto prevented high-yield, low-cost fabrication of back-illuminated CMOS/CCD imagers by use of standard VLSI fabrication tools and techniques. It is not possible to discuss the obstacles in detail within the space available for this article. Briefly, the obstacles are posed by the problems of generating light-absorbing layers having desired uniform and accurate thicknesses, passivation of surfaces, forming structures for efficient collection of charge carriers, and wafer-scale thinning (in contradistinction to diescale thinning). A basic element of the present architecture and method - the element that, more than any other, makes it possible to overcome the obstacles - is the use of an alternative starting material: Instead of starting with a conventional bulk-CMOS wafer that consists of a p-doped epitaxial silicon layer grown on a heavily-p-doped silicon substrate, one starts with a special silicon-on-insulator (SOI) wafer that consists of a thermal oxide buried between a lightly p- or n-doped, thick silicon layer and a device silicon layer of appropriate thickness and doping. The thick silicon layer is used as a handle: that is, as a mechanical support for the device silicon layer during micro-fabrication.

In-plane reversal of the magnetic anisotropy in (110)-oriented LaCoO3/La0.67Sr0.33MnO3 heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Jing; Yan, Xi; Han, Furong; Zhang, Jine; Liu, Dan; Shen, Baogen; Sun, Jirong

2018-05-01

The interface engineering of the complex oxides with strongly coupled degrees of freedom opens a wide space for the exploration of novel effects. La0.67Sr0.33MnO3 is one of the most typical complex oxides used for atomic level material engineering. Herein we reported an in-plane reversal of the magnetic anisotropy in (110)-oriented LaCoO3/La0.67Sr0.33MnO3 (LCO/LSMO) bilayers grown on (110)-oriented LaAlO3 substrates. Fixing the LSMO layer thickness to 8 nm and varying the LCO layer from 0 to 8 nm, totally six bilayers were fabricated. Without the LCO layer, the LSMO film exhibits an easy axis along the [1-10] direction. However, when the thickness of the LCO layer exceeds 1 nm, a signature of spin-reorientation appears; the easy axis turns from the [1-10] to the [001] direction below 225 K. This tendency is continuously enhanced by increasing the LCO. We reveal that lattice strains are different along these two directions. The magnetic anisotropy is not only controlled by lattice strain but also by structural distortion at interface. This work shows the great potential of the interface engineering with differently structured oxides for the exploration of novel functional materials.

A fully spray-coated fuel cell membrane electrode assembly using Aquivion ionomer with a graphene oxide/cerium oxide interlayer

NASA Astrophysics Data System (ADS)

Breitwieser, Matthias; Bayer, Thomas; Büchler, Andreas; Zengerle, Roland; Lyth, Stephen M.; Thiele, Simon

2017-05-01

A novel multilayer membrane electrode assembly (MEA) for polymer electrolyte membrane fuel cells (PEMFCs) is fabricated in this work, within a single spray-coating device. For the first time, direct membrane deposition is used to fabricate a PEMFC by spraying the short-side-chain ionomer Aquivion directly onto the gas diffusion electrodes. The fully sprayed MEA, with an Aquivion membrane 10 μm in thickness, achieved a high power density of 1.6 W/cm2 for H2/air operation at 300 kPaabs. This is one of the highest reported values for thin composite membranes operated in H2/air atmosphere. By the means of confocal laser scanning microscopy, individual carbon fibers from the gas diffusion layer are identified to penetrate through the micro porous layer (MPL), likely causing a low electrical cell resistance in the range of 150 Ω cm2 through the thin sprayed membranes. By spraying a 200 nm graphene oxide/cerium oxide (GO/CeO2) interlayer between two layers of Aquivion ionomer, the impact of the electrical short is eliminated and the hydrogen crossover current density is reduced to about 1 mA/cm2. The peak power density of the interlayer-containing MEA drops only by 10% compared to a pure Aquivion membrane of similar thickness.

Enhancement of emission efficiency of colloidal CdSe quantum dots on silicon substrate via an ultra-thin layer of aluminum oxide.

PubMed

Patty, K; Sadeghi, S M; Nejat, A; Mao, C-B

2014-04-18

We demonstrate that an ultra-thin layer of aluminum oxide can significantly enhance the emission efficiency of colloidal quantum dots on a Si substrate. For an ensemble of single quantum dots, our results show that this super brightening process can increase the fluorescence of CdSe quantum dots, forming well-resolved spectra, while in the absence of this layer the emission remains mostly at the noise level. We demonstrate that this process can be further enhanced with irradiation of the quantum dots, suggesting a significant photo-induced fluorescence enhancement via considerable suppression of non-radiative decay channels of the quantum dots. We study the impact of the Al oxide thickness on Si and interdot interactions, and discuss the results in terms of photo-induced catalytic properties of the Al oxide and the effects of such an oxide on the Coulomb blockade responsible for suppression of photo-ionization of the quantum dots.

Characteristics of high-k gate dielectric formed by the oxidation of sputtered Hf/Zr/Hf thin films on the Si substrate

NASA Astrophysics Data System (ADS)

Kim, H. D.; Roh, Y.; Lee, J. E.; Kang, H.-B.; Yang, C.-W.; Lee, N.-E.

2004-07-01

We have investigated the effects of high temperature annealing on the physical and electrical properties of multilayered high-k gate oxide [HfSixOy/HfO2/intermixed-layer(IL)/ZrO2/intermixed-layer(IL)/HfO2] in metal-oxide-semiconductor device. The multilayered high-k films were formed after oxidizing the Hf/Zr/Hf films deposited directly on the Si substrate. The subsequent N2 annealing at high temperature (>= 700 °C) not only results in the polycrystallization of the multilayered high-k films, but also causes the diffusion of Zr. The latter transforms the HfSixOy/HfO2/IL/ZrO2/IL/HfO2 film into the Zr-doped HfO2 film, and improves electrical properties in general. However, the thin SiOx interfacial layer starts to form if annealing temperature increases over 700 °C, deteriorating the equivalent oxide thickness. .

Submicron nickel-oxide-gold tunnel diode detectors for rectennas

NASA Technical Reports Server (NTRS)

Hoofring, A. B.; Kapoor, V. J.; Krawczonek, W.

1989-01-01

The characteristics of a metal-oxide-metal (MOM) tunnel diode made of nickel, nickel-oxide, and gold, designed and fabricated by standard integrated circuit technology for use in FIR rectennas, are presented. The MOM tunnel diode was formed by overlapping a 0.8-micron-wide layer of 1000-A of nickel, which was oxidized to form a thin layer of nickel oxide, with a 1500 A-thick layer of gold. The dc current-voltage characteristics of the MOM diode showed that the current dependence on voltage was linear about zero bias up to a bias of about 70 mV. The maximum detection of a low-level signal (10-mV ac) was determined to be at a dc voltage of 70 mV across the MOM diode. The rectified output signal due to a chopped 10.6-micron CO2 laser incident upon the rectenna device was found to increase with dc bias, with a maximum value of 1000 nV for a junction bias of 100 mV at room temperature.

Niobium oxide nanocolumns formed via anodic alumina with modulated pore diameters

NASA Astrophysics Data System (ADS)

Pligovka, A.; Zakhlebayeva, A.; Lazavenka, A.

2018-03-01

Niobium oxide nanocolumns with modulated diameters were formed for the first time. An Al/Nb bilayer specimen was prepared by successive sputter-deposition of 300 nm niobium layer and 1200 nm aluminum layer onto silicon wafer. Regular anodic alumina matrix with modulated pore diameters was formed by sequential anodization of initial specimen in tartaric acid at 180 V, and in oxalic acid at 37 V. Further potentiodynamic reanodization of the specimen up to 400 V causes the simultaneous growth of 440 nm continuous niobium oxide layer beneath the alumina film and two types of an array of oxide nanocolumns (thick – with 100 nm width and 630 nm high and thin – with 25 nm width and 170 nm high), which are the filling of the alumina pores. The morphology of the formed anodic niobium oxide nanocolumns with modulated diameters was determined by field emission scanning electron microscopy. The formed nanostructures can be used for perspective devices of nano- and optoelectronics such as photonic crystals.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poletika, T. M., E-mail: poletm@ispms.tsc.ru; Girsova, S. L., E-mail: llm@ispms.tsc.ru; Meisner, L. L., E-mail: girs@ispms.tsc.ru

The structure of the surface and near-surface layers of single crystals of NiTi, differently oriented relative to the direction of ion beam treatment was investigated. The role of the crystallographic orientation in formation of structure of surface layers after ion-plasma alloying was revealed. It was found that the orientation effects of selective sputtering and channeling determine the thickness of the oxide and amorphous layers, the depth of penetration of ions and impurities, the distribution of Ni with depth.

Temperature stability of Al(x)Ga(1-x)As (x = 0-1) thermal oxide masks for selective-area epitaxy

NASA Technical Reports Server (NTRS)

Jones, Stephen H.; Lau, Kei May; Pouch, John J.

1988-01-01

The use of thermal oxides of Al(x)Ga(1-x)As (x = 0-1) as masking materials for selective-area epitaxy by a organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (less than or equal to 600 C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al(0.4)Ga(0.6)As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.

Electroless atomic layer deposition

DOEpatents

Robinson, David Bruce; Cappillino, Patrick J.; Sheridan, Leah B.; Stickney, John L.; Benson, David M.

2017-10-31

A method of electroless atomic layer deposition is described. The method electrolessly generates a layer of sacrificial material on a surface of a first material. The method adds doses of a solution of a second material to the substrate. The method performs a galvanic exchange reaction to oxidize away the layer of the sacrificial material and deposit a layer of the second material on the surface of the first material. The method can be repeated for a plurality of iterations in order to deposit a desired thickness of the second material on the surface of the first material.

Perform Tests and Document Results and Analysis of Oxide Layer Effects and Comparisons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Collins, E. D.; DelCul, G. D.; Spencer, B. B.

2014-08-30

During the initial feasibility test using actual used nuclear fuel (UNF) cladding in FY 2012, an incubation period of 30–45 minutes was observed in the initial dry chlorination. The cladding hull used in the test had been previously oxidized in a dry air oxidation pretreatment prior to removal of the fuel. The cause of this incubation period was attributed to the resistance to chlorination of an oxide layer imparted by the dry oxidation pretreatment on the cladding. Subsequently in 2013, researchers at the Korea Atomic Energy Institute (KAERI) reported on their chlorination study [R1] on ~9-gram samples of unirradiated ZirloTMmore » cladding tubes that had been previously oxidized in air at 500oC for various time periods to impart oxide layers of varying thickness. In early 2014, discussions with Indefinite Delivery, Indefinite Quantity (IDIQ) contracted technical consultants from Westinghouse described their previous development (and patents) [R2] on methods of chemical washing to remove some or all of the hydrous oxide layer imparted on UNF cladding during irradiation in light water reactors (LWRs) . Thus, the Oak Ridge National Laboratory (ORNL) study, described herein, was planned to extend the KAERI study on the effects of anhydrous oxide layers, but on larger ~100-gram samples of unirradiated zirconium alloy cladding tubes, and to investigate the effects of various methods of chemical pretreatment prior to chlorination with 100% chlorine on the average reaction rates and Cl2 usage efficiencies.« less

Very high-cycle fatigue failure in micron-scale polycrystalline silicon films: Effects of environment and surface oxide thickness

NASA Astrophysics Data System (ADS)

Alsem, D. H.; Timmerman, R.; Boyce, B. L.; Stach, E. A.; De Hosson, J. Th. M.; Ritchie, R. O.

2007-01-01

Fatigue failure in micron-scale polycrystalline silicon structural films, a phenomenon that is not observed in bulk silicon, can severely impact the durability and reliability of microelectromechanical system devices. Despite several studies on the very high-cycle fatigue behavior of these films (up to 1012cycles), there is still an on-going debate on the precise mechanisms involved. We show here that for devices fabricated in the multiuser microelectromechanical system process (MUMPs) foundry and Sandia Ultra-planar, Multi-level MEMS Technology (SUMMiT V™) process and tested under equi-tension/compression loading at ˜40kHz in different environments, stress-lifetime data exhibit similar trends in fatigue behavior in ambient room air, shorter lifetimes in higher relative humidity environments, and no fatigue failure at all in high vacuum. The transmission electron microscopy of the surface oxides in the test samples shows a four- to sixfold thickening of the surface oxide at stress concentrations after fatigue failure, but no thickening after overload fracture in air or after fatigue cycling in vacuo. We find that such oxide thickening and premature fatigue failure (in air) occur in devices with initial oxide thicknesses of ˜4nm (SUMMiT V™) as well as in devices with much thicker initial oxides ˜20nm (MUMPs). Such results are interpreted and explained by a reaction-layer fatigue mechanism. Specifically, moisture-assisted subcritical cracking within a cyclic stress-assisted thickened oxide layer occurs until the crack reaches a critical size to cause catastrophic failure of the entire device. The entirety of the evidence presented here strongly indicates that the reaction-layer fatigue mechanism is the governing mechanism for fatigue failure in micron-scale polycrystalline silicon thin films.

Greyscale Photolithography for Multilayer PZT Microelectromechanical Systems (MEMS) Device Applications

DTIC Science & Technology

We present development of a process to perform greyscale photolithography on a 2.55-m thick photoresist in order to transfer tiered and sloped...platinum or iridium oxide (IrO2) electrodes above and below each layer. Process variables including resist rehydration , focus of the exposure, and UV cure...bake temperature were optimized to produce the best greyscale profile through the thickness of the resist.

Organic Light-Emitting Diodes with a Perylene Interlayer Between the Electrode-Organic Interface

NASA Astrophysics Data System (ADS)

Saikia, Dhrubajyoti; Sarma, Ranjit

2018-01-01

The performance of an organic light-emitting diode (OLED) with a vacuum-deposited perylene layer over a fluorine-doped tin oxide (FTO) surface is reported. To investigate the effect of the perylene layer on OLED performance, different thicknesses of perylene are deposited on the FTO surface and their current density-voltages (J-V), luminance-voltages (L-V) and device efficiency characteristics at their respective thickness are studied. Further analysis is carried out with an UV-visible light double-beam spectrophotometer unit, a four-probe resistivity unit and a field emission scanning electron microscope set up to study the optical transmittance, sheet resistance and surface morphology of the bilayer anode film. We used N,N'-bis(3-methyl phenyl)- N,N'(phenyl)-benzidine (TPD) as the hole transport layer, Tris(8-hydroxyquinolinato)aluminum (Alq3) as a light-emitting layer and lithium fluoride as an electron injection layer. The luminance efficiency of an OLED structure with a 9-nm-thick perylene interlayer is increased by 2.08 times that of the single-layer FTO anode OLED. The maximum value of current efficiency is found to be 5.25 cd/A.

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

NASA Astrophysics Data System (ADS)

Niinistö, J.; Putkonen, M.; Niinistö, L.; Kukli, K.; Ritala, M.; Leskelä, M.

2004-01-01

ZrO2 thin films with thicknesses below 20 nm were deposited by the atomic layer deposition process on Si(100) substrates at 350 °C. An organometallic precursor, Cp2Zr(CH3)2 (Cp=cyclopentadienyl, C5H5) was used as the zirconium source and water or ozone as oxygen source. The influence of oxygen source and substrate pretreatment on the dielectric properties of ZrO2 films was investigated. Structural characterization with high-resolution transmission electron microscopy was performed to films grown onto HF-etched or native oxide covered silicon. Strong inhibition of ZrO2 film growth was observed with the water process on HF-etched Si. Ozone process on HF-etched Si resulted in interfacial SiO2 formation between the dense and uniform film and the substrate while water process produced interfacial layer with intermixing of SiO2 and ZrO2. The effective permittivity of ZrO2 in Al/ZrO2/Si/Al capacitor structures was dependent on the ZrO2 layer thickness and oxygen source used. The interfacial layer formation increased the capacitance equivalent oxide thickness (CET). CET of 2.0 nm was achieved with 5.9 nm ZrO2 film deposited with the H2O process on HF-stripped Si. The ozone-processed films showed good dielectric properties such as low hysteresis and nearly ideal flatband voltage. The leakage current density was lower and breakdown field higher for the ozone-processed ZrO2 films.

Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films

PubMed Central

Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H. B.; Wang, J.; Ma, B.; Jin, Q. Y.

2015-01-01

Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices. PMID:26190066

Layer-by-Layer Motif Architectures: Programmed Electrochemical Syntheses of Multilayer Mesoporous Metallic Films with Uniformly Sized Pores.

PubMed

Jiang, Bo; Li, Cuiling; Qian, Huayu; Hossain, Md Shahriar A; Malgras, Victor; Yamauchi, Yusuke

2017-06-26

Although multilayer films have been extensively reported, most compositions have been limited to non-catalytically active materials (e.g. polymers, proteins, lipids, or nucleic acids). Herein, we report the preparation of binder-free multilayer metallic mesoporous films with sufficient accessibility for high electrocatalytic activity by using a programmed electrochemical strategy. By precisely tuning the deposition potential and duration, multilayer mesoporous architectures consisting of alternating mesoporous Pd layers and mesoporous PdPt layers with controlled layer thicknesses can be synthesized within a single electrolyte, containing polymeric micelles as soft templates. This novel architecture, combining the advantages of bimetallic alloys, multilayer architectures, and mesoporous structures, exhibits high electrocatalytic activity for both the methanol oxidation reaction (MOR) and the ethanol oxidation reaction (EOR). © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Structural Evolution of Low-Molecular-Weight Poly(ethylene oxide)-block-polystyrene Diblock Copolymer Thin Film

PubMed Central

Huang, Xiaohua

2013-01-01

The structural evolution of low-molecular-weight poly(ethylene oxide)-block-polystyrene (PEO-b-PS) diblock copolymer thin film with various initial film thicknesses on silicon substrate under thermal annealing was investigated by atomic force microscopy, optical microscopy, and contact angle measurement. At film thickness below half of the interlamellar spacing of the diblock copolymer (6.2 nm), the entire silicon is covered by a polymer brush with PEO blocks anchored on the Si substrate due to the substrate-induced effect. When the film is thicker than 6.2 nm, a dense polymer brush which is equal to half of an interlamellar layer was formed on the silicon, while the excess material dewet this layer to form droplets. The droplet surface was rich with PS block and the PEO block crystallized inside the bigger droplet to form spherulite. PMID:24302862

High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mu, Haichuan; Zhang, Zhiqiang; Wang, Keke

2014-07-21

Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5 nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36 s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductivemore » graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.« less

Fabrication of complex free-standing nanostructures with concave and convex curvature via the layer-by-layer approach.

PubMed

Raoufi, Mohammad; Schönherr, Holger

2014-02-18

We report on the fabrication of unprecedented free-standing complex polymeric nanoobjects, which possess both concave and convex curvatures, by exploiting the layer-by-layer (LBL) deposition of polyelectrolytes. In a combined top-down/bottom-up replication approach pore diameter-modulated anodic aluminum oxide (AAO) templates, fabricated by temperature modulation hard anodization (TMHA), were replicated with multilayers of poly(styrene sulfonate) (PSS) and poly(allylamine hydrochloride) (PAH) to yield open nanotubes with diameters in the wide and narrow segments of 210 and 150 nm, respectively. To obtain stable pore diameter-modulated nanopores, which possess segment lengths between 1 and 5 μm and 5 and 10 μm in the narrow and wide pore portion, respectively, conventional hard anodization of aluminum was followed by a subsequent temperature-modulated anodization. After removing the backside aluminum electrode, silanizing the aluminum oxide, and passivating the exposed membrane surface with a thin layer of gold, PSS and PAH were deposited alternatingly to yield LBL multilayers. For optimized LBL multilayer thicknesses and compactness, established in separate experiments on silicon substrates and nanoporous AAO with straight pores, free-standing polymeric nanoobjects with concave and convex curvatures, were obtained. These were stable for wall thickness to pore diameter ratios of ≥0.08.

Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

PubMed

Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

2014-07-23

Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

Effect of titanium oxide compact layer in dye-sensitized solar cell prepared by liquid-phase deposition

NASA Astrophysics Data System (ADS)

Huang, Jung-Jie; Chiu, Shih-Ping; Wu, Menq-Jion; Hsu, Chun-Fa

2016-11-01

In this study, titanium dioxide films were deposited on indium tin oxide glass substrates by liquid-phase deposition (LPD) for application as the compact layer in dye-sensitized solar cells (DSSCs). A deposition solution of ammonium hexafluorotitanate and boric acid was used for TiO2 deposition. Compact layer passivation can improve DSSC performance by decreasing carrier losses from recombination at the ITO/electrolyte interface and improving the electrical contact between the ITO and the TiO2 photo-electrode. The optimum thickness of the compact layer was found to be 48 nm, which resulted in a 50 % increase in the conversion efficiency compared with cells without compact layers. The conversion efficiency can be increased from 3.55 to 5.26 %. Therefore, the LPD-TiO2 compact layer inhibits the dark current and increases the short-circuit current density effectively.

Effect of Test Parameters on the Friction Behaviour of Anodized Aluminium Alloy

PubMed Central

Khalladi, A.; Elleuch, K.; De-Petris Wery, M.; Ayedi, H. F.

2014-01-01

The tribological behaviour of anodic oxide layer formed on Al5754, used in automotive applications, was investigated against test parameters. The friction coefficient under different normal loads, sliding speeds, and oxide thicknesses was studied using a pin on disc tribometer. Results show that the increase of load and sliding speed increase the friction coefficient. The rise of contact pressure and temperature seems to cause changes in wear mechanism. Glow-discharge optical emission spectroscopy (GDOES) was used to investigate the chemical composition of the oxide layer. Morphology and composition of the wear tracks were analyzed by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). On the basis of these characterization techniques, a wear mechanism was proposed. The observed mechanical properties can be related to the morphology and the chemical composition of the layer. PMID:27437452

Fabrication of Total-Dose-Radiation-Hardened (TDRH) SOI wafer with embedded silicon nanoclusters

NASA Astrophysics Data System (ADS)

Wu, Aimin; Wang, Xi; Wei, Xing; Chen, Jing; Chen, Ming; Zhang, Zhengxuan

2009-05-01

Si ion-implantation and post annealing of silicon wafers prior to wafer bonding were used to radiation-harden the thermal oxide layer of Silicon on Insulator structures. After grinding and polishing, Total-Dose-Radiation-Hardened SOI (TDRH-SOI) wafers with several-micron-thick device layers were prepared. Electrical characterization before and after X-ray irradiation showed that the flatband voltage shift induced by irradiation was reduced by this preprocessing. Photoluminescence Spectroscopy (PL), Transmission Electron Microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) results indicated that the improvement of the total dose response of the TDRH-SOI wafer was associated with formation of Si nanoclusters in the implanted oxide layer, suggesting that these were the likely candidates for electron and proton trapping centers that reduce the positive charge buildup effect in the buried oxide.

Influence of Surface Properties of Filtration-Layer Metal Oxide on Ceramic Membrane Fouling during Ultrafiltration of Oil/Water Emulsion.

PubMed

Lu, Dongwei; Zhang, Tao; Gutierrez, Leo; Ma, Jun; Croué, Jean-Philippe

2016-05-03

In this work, ceramic ultrafiltration membranes deposited with different metal oxides (i.e., TiO2, Fe2O3, MnO2, CuO, and CeO2) of around 10 nm in thickness and similar roughness were tested for O/W emulsion treatment. A distinct membrane fouling tendency was observed, which closely correlated to the properties of the filtration-layer metal oxides (i.e., surface hydroxyl groups, hydrophilicity, surface charge, and adhesion energy for oil droplets). Consistent with the distinct bond strength of the surface hydroxyl groups, hydrophilicity of these common metal oxides is quite different. The differences in hydrophilicity consequently lead to different adhesion of these metal oxides toward oil droplets, consistent with the irreversible membrane fouling tendency. In addition, the surface charge of the metal oxide opposite to that of emulsion can help to alleviate irreversible membrane fouling in ultrafiltration. Highly hydrophilic Fe2O3 with the lowest fouling tendency could be a potential filtration-layer material for the fabrication/modification of ceramic membranes for O/W emulsion treatment. To the best of our knowledge, this is the first study clearly showing the correlations between surface properties of filtration-layer metal oxides and ceramic membrane fouling tendency by O/W emulsion.

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

PubMed

Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

2017-02-09

Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x < 2) and played the role of a series resistor, whose resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

Tuning of shell thickness of solid lipid particles impacts the chemical stability of encapsulated ω-3 fish oil.

PubMed

Salminen, Hanna; Helgason, Thrandur; Kristinsson, Bjarki; Kristbergsson, Kristberg; Weiss, Jochen

2017-03-15

This study demonstrates that tuning the shell thickness of lipid particles can modulate their oxidative stability. We hypothesized that a thick crystallized shell around the incorporated fish oil would improve the oxidative stability due to the reduced diffusion of prooxidants and oxygen. We prepared solid lipid nanoparticles (5%w/w lipid phase, 1.5%w/w surfactant, pH 7) by using different ratios of tristearin as carrier lipid and ω-3 fish oil as incorporated liquid lipid stabilized by high- or low-melting lecithin. The physical, polymorphic and oxidative stability of the lipid particles was assessed. The high-melting lecithin was the key in inducing the formation of a solidified tristearin shell around the lipid particles by interfacial heterogeneous nucleation. Lipid particles containing a higher ratio of tristearin showed a better oxidative stability. The results revealed that a crystallized tristearin layer above 10nm was required to inhibit oxidation of the incorporated fish oil. This cut-off was shown for lipid particles containing 50-60% fish oil. This research gives important insights into understanding the relation between the thickness of the crystallized shell around the lipid particles and their chemical stability. Copyright © 2016 Elsevier Inc. All rights reserved.

Low power loss and field-insensitive permeability of Fe-6.5%Si powder cores with manganese oxide-coated particles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Junnan, E-mail: junnanli1991@163.com, E-mail: rzhgong@hust.edu.cn; Wang, Xian; Xu, Xiaojun

Fe-6.5%Si alloy powders coated with manganese oxides using an innovative in situ process were investigated. The in-situ coating of the insulating oxides was realized with a KMnO{sub 4} solution by a chemical process. The insulating manganese oxides with mixed valance state were verified by X-ray photoelectron spectroscopy analysis. The thickness of the insulating layer on alloy particles was determined to be in a range of 20–210 nm, depending upon the KMnO{sub 4} concentration. The powder core loss and the change in permeability under a DC-bias field were measured at frequencies ranging from 50 to 100 kHz. The experiments indicated that themore » Fe-6.5%Si powder cores with a 210 nm-thick manganese oxide layer not only showed a low core loss of 459 mW/cm{sup 3} at 100 kHz but also showed a small reduction in permeability (μ(H)/μ(0) = 85% for μ = 42) at a DC-bias field of 80 Oe. This work has defined a novel pathway to realizing low core loss and field-insensitive permeability for Fe-Si powder cores.« less

Influence of Nitinol wire surface treatment on oxide thickness and composition and its subsequent effect on corrosion resistance and nickel ion release.

PubMed

Clarke, B; Carroll, W; Rochev, Y; Hynes, M; Bradley, D; Plumley, D

2006-10-01

Medical implants and devices are now used successfully in surgical procedures on a daily basis. Alloys of nickel and titanium, and in particular Nitinol are of special interest in the medical device industry, because of their shape memory and superelastic properties. The corrosion behavior of nitinol in the body is also of critical importance because of the known toxicological effects of nickel. The stability of a NiTi alloy in the physiological environment is dependant primarily on the properties of the mostly TiO(2) oxide layer that is present on the surface. For the present study, a range of nitinol wires have been prepared using different drawing processes and a range of surface preparation procedures. It is clear from the results obtained that the wire samples with very thick oxides also contain a high nickel content in the oxide layer. The untreated samples with the thicker oxides show the lowest pitting potential values and greater nickel release in both long and short-term experiments. It was also found that after long-term immersion tests breakdown potentials increased for samples that exhibited lower values initially. From these results it would appear that surface treatment is essential for the optimum bioperformance of nitinol. (c) 2006 Wiley Periodicals, Inc

Strong enhancement of the luminescence decay time of isoelectronic centers in GaP:N at low temperatures

NASA Astrophysics Data System (ADS)

St-Jean, Philippe; Ethier-Majcher, Gabriel; Bergeron, Alaric; Francoeur, Sebastien

2013-03-01

We report (i)- results from ac impedance measurements obtained for intrinsic indium oxide films, grown under O2-rich conditions, (ii)- current-voltage (I-V) curves for p-n homojunctions fabricated by sequential growth of a 200 nm thick p-type In2O3 layer on a 400 nm thick n-type In2O3, and (iii)- capacitance-voltage (C-V) curves for these junctions. Impedance as well as I-V and C-V measurements were performed under UV irradiation and in darkness. We find two distinct contributions to the ac conductivity. One of them is brought about by grain boundaries, and the other one by inversion layers, which are on grain surfaces. In addition, we have found that photocurrents relax extremely slowly in these films. All of this fits consistently within a model in which mobile holes in inversion layers are responsible for p-type dc conductivity in intrinsic indium oxide films grown under O2-rich conditions. Such mechanism might be important in other polycrystalline thin films which have a large number of oxidizing defects at grain boundaries. We acknowledge support from grant MAT2012-38213-C02-01, from the Ministerio de Economia y Competividad, Spain.

CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

PubMed Central

Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

2014-01-01

Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SixNy) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2 such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD SixNy and 100-nm HfO2 insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

Thickness and composition of ultrathin SiO2 layers on Si

NASA Astrophysics Data System (ADS)

van der Marel, C.; Verheijen, M. A.; Tamminga, Y.; Pijnenburg, R. H. W.; Tombros, N.; Cubaynes, F.

2004-07-01

Ultrathin SiO2 layers are of importance for the semiconductor industry. One of the techniques that can be used to determine the chemical composition and thickness of this type of layers is x-ray photoelectron spectroscopy (XPS). As shown by Seah and Spencer [Surf. Interface Anal. 33, 640 (2002)], it is not trivial to characterize this type of layer by means of XPS in a reliable way. We have investigated a series of ultrathin layers of SiO2 on Si (in the range from 0.3 to 3 nm) using XPS. The samples were also analyzed by means of transmission electron microscopy (TEM), Rutherford backscattering (RBS), and ellipsometry. The thickness of the SiO2 layers (d) was determined from the XPS results using three different approaches: the ``standard'' equation (Seah and Spencer) for d, an overlayer-substrate model calculation, and the QUASES-Tougaard [Surf. Interface Anal. 26, 249 (1998), QUASES-Tougaard: Software package for Quantitative Analysis of Surfaces by Electron Spectroscopy, version 4.4 (2000); http://www.quases.com] method. Good agreement was obtained between the results of XPS analyses using the ``standard'' equation, the overlayer-substrate model calculation, and RBS results. The QUASES-Tougaard results were approximately 62% above the other XPS results. The optical values for the thickness were always slightly higher than the thickness according to XPS or RBS. Using the model calculation, these (relatively small) deviations from the optical results could be explained as being a consequence of surface contaminations with hydrocarbons. For a thickness above 2.5 nm, the TEM results were in good agreement with the results obtained from the other techniques (apart from QUASES-Tougaard). Below 2.5 nm, significant deviations were found between RBS, XPS, and optical data on the one hand and TEM results on the other hand; the deviations became larger as the thickness of the SiO2 decreased. This effect may be related to interface states of oxygen, which have been investigated [D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, and G. Timp, Nature (London) 399, 758 (1999); D. A. Muller and J. B. Neaton, Structure and Energetics of the Interface Between Si and Amorphous SiO2 in Fundamental Aspects of Silicon Oxidation, edited by Y. J. Chabal (Springer, Berlin, 2001), pp. 219-246.] by means of high-resolution electron energy loss spectroscopy measurements of the O K edge in ultrathin gate oxides of SiO2. .

Model for thickness dependence of mobility and concentration in highly conductive zinc oxide

NASA Astrophysics Data System (ADS)

Look, David C.; Leedy, Kevin D.; Kiefer, Arnold; Claflin, Bruce; Itagaki, Naho; Matsushima, Koichi; Surhariadi, Iping

2013-03-01

The dependences of the 294 and 10 K mobility μ and volume carrier concentration n on thickness (d=25 to 147 nm) are examined in aluminum-doped zinc oxide (AZO). Two AZO layers are grown at each thickness, one with and one without a 20-nm-thick ZnON buffer layer. Plots of the 10 K sheet concentration ns versus d for buffered (B) and unbuffered (UB) samples give straight lines of similar slope, n=8.36×1020 and 8.32×1020 cm-3, but different x-axis intercepts, δd=-4 and +13 nm, respectively. Plots of ns versus d at 294 K produce substantially the same results. Plots of μ versus d can be well fitted with the equation μ(d)=μ(∞)/[1+d*/(d-δd)], where d* is the thickness for which μ(∞) is reduced by a factor 2. For the B and UB samples, d*=7 and 23 nm, respectively, showing the efficacy of the ZnON buffer. Finally, from n and μ(∞) we can use degenerate electron scattering theory to calculate bulk donor and acceptor concentrations of 1.23×1021 cm-3 and 1.95×1020 cm-3, respectively, and Drude theory to predict a plasmonic resonance at 1.34 μm. The latter is confirmed by reflectance measurements.

Chemical gating of epitaxial graphene through ultrathin oxide layers.

PubMed

Larciprete, Rosanna; Lacovig, Paolo; Orlando, Fabrizio; Dalmiglio, Matteo; Omiciuolo, Luca; Baraldi, Alessandro; Lizzit, Silvano

2015-08-07

We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting the thickness of the oxide layer. After complete thermal desorption of oxygen the intrinsic doping of SiO2 supported graphene is evaluated in the absence of contaminants and adventitious adsorbates. The demonstration that the charge state of graphene can be changed by chemically modifying the buried oxide/metal interface hints at the possibility of tuning the level and sign of doping by the use of other intercalants capable of diffusing through the ultrathin porous dielectric and reach the interface with the metal.

Conformal bi-layered perovskite/spinel coating on a metallic wire network for solid oxide fuel cells via an electrodeposition-based route

NASA Astrophysics Data System (ADS)

Park, Beom-Kyeong; Song, Rak-Hyun; Lee, Seung-Bok; Lim, Tak-Hyoung; Park, Seok-Joo; Jung, WooChul; Lee, Jong-Won

2017-04-01

Solid oxide fuel cells (SOFCs) require low-cost metallic components for current collection from electrodes as well as electrical connection between unit cells; however, the degradation of their electrical properties and surface stability associated with high-temperature oxidation is of great concern. It is thus important to develop protective conducting oxide coatings capable of mitigating the degradation of metallic components under SOFC operating conditions. Here, we report a conformal bi-layered coating composed of perovskite and spinel oxides on a metallic wire network fabricated by a facile electrodeposition-based route. A highly dense, crack-free, and adhesive bi-layered LaMnO3/Co3O4 coating of ∼1.2 μm thickness is conformally formed on the surfaces of wires with ∼100 μm diameter. We demonstrate that the bi-layered LaMnO3/Co3O4 coating plays a key role in improving the power density and durability of a tubular SOFC by stabilizing the surface of the metallic wire network used as a cathode current collector. The electrodeposition-based technique presented in this study offers a low-cost and scalable process to fabricate conformal multi-layered coatings on various metallic structures.

Polymer Photovoltaic Cells with Rhenium Oxide as Anode Interlayer.

PubMed

Wei, Jinyu; Bai, Dongdong; Yang, Liying

2015-01-01

The effect of a new transition metal oxide, rhenium oxide (ReO3), on the performance of polymer solar cells based on regioregular poly(3-hexylthiophene) (P3HT) and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester (PCBM) blend as buffer layer was investigated. The effect of the thickness of ReO3 layer on electrical characteristics of the polymer solar cells was studied. It is found that insertion of ReO3 interfacial layer results in the decreased performance for P3HT: PCBM based solar cells. In order to further explore the mechanism of the decreasing of the open-circuit voltage (Voc), the X-ray photoelectron spectroscopy (XPS) is used to investigate the ReO3 oxidation states. Kelvin Probe method showed that the work function of the ReO3 is estimated to be 5.13eV after thermal evaporation. The results indicated the fact that a portion of ReO3 decomposed during thermal evaporation process, resulting in the formation of a buffer layer with a lower work function. As a consequence, a higher energy barrier was generated between the ITO and the active layer.

Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

PubMed

Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

2016-08-31

The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

Polymer Photovoltaic Cells with Rhenium Oxide as Anode Interlayer

PubMed Central

Wei, Jinyu; Bai, Dongdong; Yang, Liying

2015-01-01

The effect of a new transition metal oxide, rhenium oxide (ReO3), on the performance of polymer solar cells based on regioregular poly(3-hexylthiophene) (P3HT) and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester (PCBM) blend as buffer layer was investigated. The effect of the thickness of ReO3 layer on electrical characteristics of the polymer solar cells was studied. It is found that insertion of ReO3 interfacial layer results in the decreased performance for P3HT: PCBM based solar cells. In order to further explore the mechanism of the decreasing of the open-circuit voltage (Voc), the X-ray photoelectron spectroscopy (XPS) is used to investigate the ReO3 oxidation states. Kelvin Probe method showed that the work function of the ReO3 is estimated to be 5.13eV after thermal evaporation. The results indicated the fact that a portion of ReO3 decomposed during thermal evaporation process, resulting in the formation of a buffer layer with a lower work function. As a consequence, a higher energy barrier was generated between the ITO and the active layer. PMID:26226439

Flexible IZO/Ag/IZO/Ag multilayer electrode grown on a polyethylene terephthalate substrate using roll-to-roll sputtering

PubMed Central

2012-01-01

We investigated the optical, electrical, structural, and surface properties of roll-to-roll [R2R] sputter-grown flexible IZO/Ag/IZO/Ag [IAIA] multilayer films on polyethylene terephthalate substrates as a function of the top indium zinc oxide [IZO] thickness. It was found that the optical transmittance of the IAIA multilayer was significantly influenced by the top IZO layer thickness, which was grown on identical AIA multilayers. However, the sheet resistance of the IAIA multilayer was maintained between the range 5.01 to 5.1 Ω/square regardless of the top IZO thickness because the sheet resistance of the IAIA multilayer was mainly dependent on the thickness of the Ag layers. Notably, the optimized IAIA multilayer had a constant resistance change (ΔR/R0) under repeated outer bending tests with a radius of 10 mm. The mechanical integrity of the R2R-sputtered IAIA multilayer indicated that hybridization of an IZO and Ag metal layer is a promising flexible electrode scheme for the next-generation flexible optoelectronics. PMID:22222144

Very thick mixture oxide ion beam sputtering films for investigation of nonlinear material properties

NASA Astrophysics Data System (ADS)

Steinecke, Morten; Kiedrowski, Kevin; Jupé, Marco; Ristau, Detlev

2017-11-01

Currently, optical coating technology is facing a multitude of new challenges. Some of the new requirements are addressed to the spectral behavior of complex coatings, but in addition, the power handling capabilities gain in importance. Often, both demands are combined in the same component, for example in chirped mirrors for ultra-short pulse applications. The consequent demands on the accuracy of the layer thicknesses and the stability of the refractive indices require a deposition by sputtering processes. For high end components, Ion Beam Sputtering (IBS) is often the method of choice. Utilizing the Co-sputtering technique, IBS additionally allows a higher flexibility in the possible coating materials by mixing two pure oxides into one ternary composite material. These composite materials are also advantageous for researching third order nonlinear effects, which can limit the functionality of optics at high powers. The layer thicknesses required for this fundamental research often exceed 100 µm, which therefore makes low stress and absorption in the layer materials mandatory. A reduction of these decisive properties can be achieved by a thermal treatment of the sample. Usually, this is performed by a post-deposition annealing. Alternatively, the coating temperature can be increased. This is rarely done for IBS processes, but it can be assumed, that the effect is comparable to that of ex-situ annealing. In this work, different ternary mixtures of Al2O3/SiO2, HfO2/Al2O3 as well as Nb2O5/Al2O3 were investigated for their layer stress and absorption, applying both, in-situ temperature treatment as well as post manufacturing annealing. It is observed that suitable thermal treatment as well as material composition can significantly reduce layer stress and absorption in the deposited layer. This enabled the manufacturing of layers with thicknesses of over 180 µm as well as the measurement of nonlinear properties of the deposited materials. Contribution to the topical issue "Plasma Sources and Plasma Processes (PSPP)", edited by Luis Lemos Alves, Thierry Belmonte and Tiberiu Minea

Magnetoresistance of antiferromagnetic Ir22Mn78-pinned spin filter specular spin valves

NASA Astrophysics Data System (ADS)

Hwang, J. Y.; Kim, M. Y.; Rhee, J. R.; Lee, S. S.; Hwang, D. G.; Yu, S. C.; Lee, H. B.

2004-06-01

Specular spin valves (SSVs) having the spin filter layer (SFL) in contact with the ultrathin free layer of composition Ta3/NiFe2/IrMn7/CoFe1/(NOL1)/CoFe2/Cu1.8/CoFe(tF)/Cu(tSF)/(NOL2)/Ta3.5 (in nm) deposited by magnetron sputtering were studied. For these antiferromagnetic Ir22Mn78-pinned spin filter specular spin valve (SFSSV) films, an optimal magnetoresistance (MR) ratio of 11.9% was obtained when both the free layer thickness (tF) and the SFL thickness (tSF) were 1.5 nm, and a MR ratio higher than 11% was maintained even when tF was reduced to 1.0 nm. This was due to an increase of specular electrons by the nano-oxide layer (NOL) and of current shunting through the SFL. Moreover, the interlayer coupling field (Hint) between the free layer and pinned layer could be explained by considering the RKKY and magnetostatic coupling. The coercivity of the free layer (Hcf) was significantly reduced as compared to traditional spin valves (TSV), and remained as low as 4 Oe when tF varied from 1 to 4 nm. It was found that the SFL made it possible to reduce the free layer thickness and enhance the MR ratio without degrading the soft magnetic property of the free layer.

Sodium Iodate Produces a Strain-Dependent Retinal Oxidative Stress Response Measured In Vivo Using QUEST MRI.

PubMed

Berkowitz, Bruce A; Podolsky, Robert H; Lenning, Jacob; Khetarpal, Nikita; Tran, Catherine; Wu, Johnny Y; Berri, Ali M; Dernay, Kristin; Shafie-Khorassani, Fatema; Roberts, Robin

2017-06-01

We identify noninvasive biomarkers that measure the severity of oxidative stress within retina layers in sodium iodate (SI)-atrophy vulnerable (C57BL/6 [B6]) and SI-atrophy resistant (129S6/SvEvTac [S6]) mice. At 24 hours after administering systemic SI to B6 and S6 mice we measured: (1) superoxide production in whole retina ex vivo, (2) excessive free radical production in vivo based on layer-specific 1/T1 values before and after α-lipoic acid (ALA) administration while the animal was inside the magnet (QUEnch-assiSTed MRI [QUEST MRI]), and (3) visual performance (optokinetic tracking) ± antioxidants; control mice were similarly assessed. Retinal layer spacing and thickness in vivo also were evaluated (optical coherence tomography, MRI). SI-treated B6 mice retina had a significantly higher superoxide production than SI-treated S6 mice. ALA-injected SI-treated B6 mice had reduced 1/T1 in more retinal layers in vivo than in SI-treated S6 mice. Uninjected and saline-injected SI-treated B6 mice had similar transretinal 1/T1 profiles. Notably, the inner segment layer 1/T1 of SI-treated B6 mice was responsive to ALA but was unresponsive in SI-treated S6 mice. In both SI-treated strains, antioxidants improved contrast sensitivity to similar extents; antioxidants did not change acuity in either group. Retinal thicknesses were normal in both SI-treated strains at 24 hours after treatment. QUEST MRI uniquely measured severity of excessive free radical production within retinal layers of the same subject. Identifying the mechanisms underlying genetic vulnerabilities to oxidative stress is expected to help in understanding the pathogenesis of retinal degeneration.

The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO₂ Films Deposited by Atomic Layer Deposition.

PubMed

Wilson, Rachel L; Simion, Cristian Eugen; Blackman, Christopher S; Carmalt, Claire J; Stanoiu, Adelina; Di Maggio, Francesco; Covington, James A

2018-03-01

Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO₂ and inferred for TiO₂. In this paper, TiO₂ thin films have been prepared by Atomic Layer Deposition (ALD) using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes), at a temperature of 200 °C. The TiO₂ films were exposed to different concentrations of CO, CH₄, NO₂, NH₃ and SO₂ to evaluate their gas sensitivities. These experiments showed that the TiO₂ film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH₄ and NH₃ exposure indicated typical n -type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

The electrochemical oxide growth behaviour on titanium in acid and alkaline electrolytes.

PubMed

Sul, Y T; Johansson, C B; Jeong, Y; Albrektsson, T

2001-06-01

Titanium implants have a thin oxide surface layer. The properties of this oxide layer may explain the good biocompatibility of titanium implants. Anodic oxidation results in a thickening of the oxide film, with possible improved biocompatability of anodized implants. The aim of the present study was twofold: (1) firstly, to characterize the growth behaviour of galvanostatically prepared anodic oxide films on commercially pure (c.p.) titanium and (2) secondly, to establish a better understanding of the electroche0mical growth behaviour of anodic oxide on commercially pure titanium (ASTM grade 1) after changes of the electrochemical parameters in acetic acid, phosphoric acid, calcium hydroxide, and sodium hydroxide under galvanostatic anodizing mode. The oxide thickness was measured by Ar sputter etching in Auger Electron spectroscopy (AES) and the colours were estimated by an L*a*b* system (lightness, hue and saturation) using a spectrophotometer. In the first part of our study, it was demonstrated that the interference colours were useful to identify the thickness of titanium oxide. It was also found that the anodic forming voltages with slope (dV/dt) in acid electrolytes were higher than in alkaline electrolytes. Each of the used electrolytes demonstrates an intrinsically specific growth constant (nm/V) in the range of 1.4--2.78 nm/V. In the second part of our study we found, as a general trend, that an increase of electrolyte concentration and electrolyte temperature respectively decreases the anodic forming voltage, the anodic forming rate (nm/s) and the current efficiency (nm.cm(2)/C), while an increase of the current density and the surface area ratio of the anode to cathode increase the anodic forming voltage, the anodic forming rate and the current efficiency. The effects of electrolyte concentration, electrolyte temperature, and agitation speed were explained on the basis of the model of the electrical double layer.

Differences in the adsorption behaviour of poly(ethylene oxide) copolymers onto model polystyrene nanoparticles assessed by isothermal titration microcalorimetry correspond to the biological differences.

PubMed

Stolnik, S; Heald, C R; Garnett, M G; Illum, L; Davis, S S

2005-01-01

The adsorption behaviour of a tetrafunctional copolymer of poly (ethylene oxide)-poly (propylene oxide) ethylene diamine (commercially available as Poloxamine 908) and a diblock copolymer of poly (lactic acid)-poly (ethylene oxide) (PLA/PEG 2:5) onto a model colloidal drug carrier (156 nm sized polystyrene latex) is described. The adsorption isotherm, hydrodynamic thickness of the adsorbed layers and enthalpy of the adsorption were assessed. The close similarity in the conformation of the poly (ethylene oxide) (PEO) chains (molecular weight 5,000 Da) in the adsorbed layers of these two copolymers was demonstrated by combining the adsorption data with the adsorbed layer thickness data. In contrast, the results from isothermal titration microcalorimetry indicated a distinct difference in the interaction of the copolymers with the polystyrene colloid surface. Poloxamine 908 adsorption to polystyrene nanoparticles is dominated by an endothermic heat effect, whereas, PLA/PEG 2:5 adsorption is entirely an exothermic process. This difference in adsorption behaviour could provide an explanation for differences in the biodistribution of Poloxamine 908 and PLA/PEG 2:5 coated polystyrene nanoparticles observed in previous studies. A comparison with the interaction enthalpy for several other PEO-containing copolymers onto the same polystyrene colloid was made. The results demonstrate the importance of the nature of the anchoring moiety on the interaction of the adsorbing copolymer with the colloid surface. An endothermic contribution is found when an adsorbing molecule contains a poly (propylene oxide) (PPO) moiety (e.g. Poloxamine 908), whilst the adsorption is exothermic (i.e. enthalpy driven) for PEO copolymers with polylactide (PLA/PEG 2:5) or alkyl moieties.

Layer Control of WSe2 via Selective Surface Layer Oxidation.

PubMed

Li, Zhen; Yang, Sisi; Dhall, Rohan; Kosmowska, Ewa; Shi, Haotian; Chatzakis, Ioannis; Cronin, Stephen B

2016-07-26

We report Raman and photoluminescence spectra of mono- and few-layer WSe2 and MoSe2 taken before and after exposure to a remote oxygen plasma. For bilayer and trilayer WSe2, we observe an increase in the photoluminescence intensity and a blue shift of the photoluminescence peak positions after oxygen plasma treatment. The photoluminescence spectra of trilayer WSe2 exhibit features of a bilayer after oxygen plasma treatment. Bilayer WSe2 exhibits features of a monolayer, and the photoluminescence of monolayer WSe2 is completely absent after the oxygen plasma treatment. These changes are observed consistently in more than 20 flakes. The mechanism of the changes observed in the photoluminescence spectra of WSe2 is due to the selective oxidation of the topmost layer. As a result, N-layer WSe2 is reduced to N-1 layers. Raman spectra and AFM images taken from the WSe2 flakes before and after the oxygen treatment corroborate these findings. Because of the low kinetic energy of the oxygen radicals in the remote oxygen plasma, the oxidation is self-limiting. By varying the process duration from 1 to 10 min, we confirmed that the oxidation will only affect the topmost layer of the WSe2 flakes. X-ray photoelectron spectroscopy shows that the surface layer WOx of the sample can be removed by a quick dip in KOH solution. Therefore, this technique provides a promising way of controlling the thickness of WSe2 layer by layer.

Formation of ZrO{sub 2} in coating on Mg–3 wt.%Al–1 wt.%Zn alloy via plasma electrolytic oxidation: Phase and structure of zirconia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kang Min; Kim, Yeon Sung; Yang, Hae Woong

2015-01-15

An investigation of the coating structure formed on Mg–3 wt.%Al–1 wt.%Zn alloy sample subjected to plasma electrolytic oxidation was examined by field-emission transmission electron microscopy. The plasma electrolytic oxidation process was conducted in a phosphoric acid electrolyte containing K{sub 2}ZrF{sub 6} for 600 s. Microstructural observations showed that the coating consisting of MgO, MgF{sub 2}, and ZrO{sub 2} phases was divided into three distinctive parts, the barrier, intermediate, and outer layers. Nanocrystalline MgO and MgF{sub 2} compounds were observed mainly in the barrier layer of ~ 1 μm thick near to the substrate. From the intermediate to outer layers, variousmore » ZrO{sub 2} polymorphs appeared due to the effects of the plasma arcing temperature on the phase transition of ZrO{sub 2} compounds during the plasma electrolytic oxidation process. In the outer layer, MgO compound grew in the form of a dendrite-like structure surrounded by cubic ZrO{sub 2}. - Highlights: • The barrier layer containing MgO and MgF{sub 2} was observed near to the Mg substrate. • In the intermediate layer, m-, t-, and o-ZrO{sub 2} compounds were additionally detected. • The outer layer contained MgO with the dendrite-like structure surrounded by c-ZrO{sub 2}. • The grain sizes of compounds in oxide layer increased from barrier to outer layer.« less

Feasibility of SiC composite structures for 1644 deg gas turbine seal applications

NASA Technical Reports Server (NTRS)

Darolia, R.

1979-01-01

The feasibility of silicon carbide composite structures was evaluated for 1644 K gas turbine seal applications. The silicon carbide composites evaluated consisted of Si/SiC Silcomp (Trademark) - and sintered silicon carbide as substrates, both with attached surface layers containing BN as an additive. A total of twenty-eight candidates with variations in substrate type and density, and layer chemistry, density, microstructure, and thickness were evaluated for abradability, cold particle erosion resistance, static oxidation resistance, ballistic impact resistance, and fabricability. The BN-free layers with variations in density and pore size were later added for evaluation. The most promising candidates were evaluated for Mach 1.0 gas oxidation/erosion resistance from 1477 K to 1644 K. The as-fabricated rub layers did not perform satisfactorily in the gas oxidation/erosion tests. However, preoxidation was found to be beneficial in improving the hot gas erosion resistance. Overall, the laboratory and rig test evaluations show that material properties are suitable for 1477 K gas turbine seal applications.

Nanosheets of oxides and hydroxides: Ultimate 2D charge-bearing functional crystallites.

PubMed

Ma, Renzhi; Sasaki, Takayoshi

2010-12-01

A wide variety of cation-exchangeable layered transition metal oxides and their relatively rare counterparts, anion-exchangeable layered hydroxides, have been exfoliated into individual host layers, i.e., nanosheets. Exfoliation is generally achieved via a high degree of swelling, typically driven either by intercalation of bulky organic ions (quaternary ammonium cations, propylammonium cations, etc.) for the layered oxides or by solvation with organic solvents (formamide, butanol, etc.) for the hydroxides. Ultimate two-dimensional (2D) anisotropy for the nanosheets, with thickness of around one nanometer versus lateral size ranging from submicrometer to several tens of micrometers, allows them to serve either as an ideal quantum system for fundamental study or as a basic building block for functional assembly. The charge-bearing inorganic macromolecule-like nanosheets can be assembled or organized through various solution-based processing techniques (e.g., flocculation, electrostatic sequential deposition, or the Langmuir-Blodgett method) to produce a range of nanocomposites, multilayer nanofilms, and core-shell nanoarchitectures, which have great potential for electronic, magnetic, optical, photochemical, and catalytic applications.

Impact of Film Thickness of Ultrathin Dip-Coated Compact TiO2 Layers on the Performance of Mesoscopic Perovskite Solar Cells.

PubMed

Masood, Muhammad Talha; Weinberger, Christian; Sarfraz, Jawad; Rosqvist, Emil; Sandén, Simon; Sandberg, Oskar J; Vivo, Paola; Hashmi, Ghufran; Lund, Peter D; Österbacka, Ronald; Smått, Jan-Henrik

2017-05-31

Uniform and pinhole-free electron-selective TiO 2 layers are of utmost importance for efficient perovskite solar cells. Here we used a scalable and low-cost dip-coating method to prepare uniform and ultrathin (5-50 nm) compact TiO 2 films on fluorine-doped tin oxide (FTO) glass substrates. The thickness of the film was tuned by changing the TiCl 4 precursor concentration. The formed TiO 2 follows the texture of the underlying FTO substrates, but at higher TiCl 4 concentrations, the surface roughness is substantially decreased. This change occurs at a film thickness close to 20-30 nm. A similar TiCl 4 concentration is needed to produce crystalline TiO 2 films. Furthermore, below this film thickness, the underlying FTO might be exposed resulting in pinholes in the compact TiO 2 layer. When integrated into mesoscopic perovskite solar cells there appears to be a similar critical compact TiO 2 layer thickness above which the devices perform more optimally. The power conversion efficiency was improved by more than 50% (from 5.5% to ∼8.6%) when inserting a compact TiO 2 layer. Devices without or with very thin compact TiO 2 layers display J-V curves with an "s-shaped" feature in the negative voltage range, which could be attributed to immobilized negative ions at the electron-extracting interface. A strong correlation between the magnitude of the s-shaped feature and the exposed FTO seen in the X-ray photoelectron spectroscopy measurements indicates that the s-shape is related to pinholes in the compact TiO 2 layer when it is too thin.

Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application

NASA Astrophysics Data System (ADS)

Lee, Sang-Yun; Kim, Hyoungsub; McIntyre, Paul C.; Saraswat, Krishna C.; Byun, Jeong-Soo

2003-04-01

A metal-insulator-metal (MIM) capacitor using ZrO2 on tungsten (W) metal bottom electrode was demonstrated and characterized in this letter. Both ZrO2 and W metal were synthesized by an atomic layer deposition (ALD) method. High-quality 110˜115 Å ZrO2 films were grown uniformly on ALD W using ZrCl4 and H2O precursors at 300 °C, and polycrystalline ZrO2 in the ALD regime could be obtained. A 13˜14-Å-thick interfacial layer between ZrO2 and W was observed after fabrication, and it was identified as WOx through angle-resolved x-ray photoelectron spectroscopy analysis with wet chemical etching. The apparent equivalent oxide thickness was 20˜21 Å. An effective dielectric constant of 22˜25 including an interfacial WOx layer was obtained by measuring capacitance and thickness of MIM capacitors with Pt top electrodes. High capacitance per area (16˜17 fF/μm2) and low leakage current (10-7 A/cm2 at ±1 V) were achieved.

Tuning interfacial ferromagnetism in LaNiO 3 / CaMnO 3 superlattices by stabilizing nonequilibrium crystal symmetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flint, C. L.; Vailionis, A.; Zhou, H.

Perovskite oxide heterostructures offer an important path forward for stabilizing and controlling low-dimensional magnetism. One of the guiding design principles for these materials systems is octahedral connectivity. In superlattices composed of perovskites with different crystal symmetries, variation of the relative ratio of the constituent layers and the individual layer thicknesses gives rise to nonequilibrium crystal symmetries that, in turn, lead to unprecedented control of interfacial ferromagnetism. We have found that in superlattices of CaMnO 3 (CMO) and LaNiO 3 (LNO), interfacial ferromagnetism can be modulated by a factor of 3 depending on LNO and CMO layer thicknesses as well asmore » their relative ratio. Such an effect is only possible due to the nonequilibrium crystal symmetries at the interfaces and can be understood in terms of the anisotropy of the exchange interactions and modifications in the interfacial Ni-O-Mn and Mn-O-Mn bond angles and lengths with increasing LNO layer thickness. Here, these results demonstrate the potential of engineering nonequilibrium crystal symmetries in designing ferromagnetism.« less

Tuning interfacial ferromagnetism in LaNiO 3 / CaMnO 3 superlattices by stabilizing nonequilibrium crystal symmetry

DOE PAGES

Flint, C. L.; Vailionis, A.; Zhou, H.; ...

2017-10-31

Perovskite oxide heterostructures offer an important path forward for stabilizing and controlling low-dimensional magnetism. One of the guiding design principles for these materials systems is octahedral connectivity. In superlattices composed of perovskites with different crystal symmetries, variation of the relative ratio of the constituent layers and the individual layer thicknesses gives rise to nonequilibrium crystal symmetries that, in turn, lead to unprecedented control of interfacial ferromagnetism. We have found that in superlattices of CaMnO 3 (CMO) and LaNiO 3 (LNO), interfacial ferromagnetism can be modulated by a factor of 3 depending on LNO and CMO layer thicknesses as well asmore » their relative ratio. Such an effect is only possible due to the nonequilibrium crystal symmetries at the interfaces and can be understood in terms of the anisotropy of the exchange interactions and modifications in the interfacial Ni-O-Mn and Mn-O-Mn bond angles and lengths with increasing LNO layer thickness. Here, these results demonstrate the potential of engineering nonequilibrium crystal symmetries in designing ferromagnetism.« less

Reduced graphene oxide coated thin aluminum film as an optoacoustic transmitter for high pressure and high frequency ultrasound generation

NASA Astrophysics Data System (ADS)

Hwan Lee, Seok; Park, Mi-ae; Yoh, Jack J.; Song, Hyelynn; Yun Jang, Eui; Hyup Kim, Yong; Kang, Sungchan; Seop Yoon, Yong

2012-12-01

We demonstrate that reduced graphene oxide (rGO) coated thin aluminum film is an effective optoacoustic transmitter for generating high pressure and high frequency ultrasound previously unattainable by other techniques. The rGO layer of different thickness is deposited between a 100 nm-thick aluminum film and a glass substrate. Under a pulsed laser excitation, the transmitter generates enhanced optoacoustic pressure of 64 times the aluminum-alone transmitter. A promising optoacoustic wave generation is possible by optimizing thermoelasticity of metal film and thermal conductivity of rGO in the proposed transmitter for laser-induced ultrasound applications.

Lanthanide-based oxides and silicates for high-kappa gate dielectric applications

NASA Astrophysics Data System (ADS)

Jur, Jesse Stephen

The ability to improve performance of the high-end metal oxide semiconductor field effect transistor (MOSFET) is highly reliant on the dimensional scaling of such a device. In scaling, a decrease in dielectric thickness results in high current leakage between the electrode and the substrate by way of direct tunneling through the gate dielectric. Observation of a high leakage current when the standard gate dielectric, SiO2, is decreased below a thickness of 1.5 nm requires engineering of a replacement dielectric that is much more scalable. This high-kappa dielectric allows for a physically thicker oxide, reducing leakage current. Integration of select lanthanide-based oxides and silicates, in particular lanthanum oxide and silicate, into MOS gate stack devices is examined. The quality of the high-kappa dielectrics is monitored electrically to determine properties such as equivalent oxide thickness, leakage current density and defect densities. In addition, analytical characterization of the dielectric and the gate stack is provided to examine the materialistic significance to the change of the electrical properties of the devices. In this work, lanthanum oxide films have been deposited by thermal evaporation on to a pre-grown chemical oxide layer on silicon. It is observed that the SiO2 interfacial layer can be consumed by a low-temperature reaction with lanthanum oxide to produce a high-quality silicate. This is opposed to depositing lanthanum oxide directly on silicon, which can possibly favor silicide formation. The importance of oxygen regulation in the surrounding environment of the La2O3-SiO2 reaction-anneal is observed. By controlling the oxygen available during the reaction, SiO2 growth can be limited to achieve high stoichiometric ratios of La2O 3 to SiO2. As a result, MOS devices with an equivalent oxide thickness (EOT) of 5 A and a leakage current density of 5.0 A/cm 2 are attained. This data equals the best value achieved in this field and is a substantial improvement over SiO(N) dielectrics, allowing for increased device scaling. High-temperature processing, consistent with the source/drain activation anneal in MOSFET processing, is performed on lanthanum-silicate based MOS devices with Ta or TaN gate electrodes and a W metal capping layer. The thermal limit of Ta is observed to be less than 800°C, resulting in a phase transformation that can result in uncontrolled shifting of the MOS device flat-band voltage. TaN is observed to be more thermally stable (up to 1000°C) and results in an increase in the capacitance density suggesting that it impedes oxygen reaction with silicon to produce SiO2. It is later observed that a W metal capping layer can serve as a high-oxygen source, which results in an increased interfacial SiO2 formation. By limiting the oxygen content in the W capping layer and by utilizing a thermally stable TaN gate electrode, control over the electrical properties of the MOS device is acquired. To determine the stability of amorphous lanthanum-silicate in contact with investigated by means of back-side secondary ion mass spectroscopy profiling. The results are the first reported data showing that the lanthanum incorporated in the silica matrix doe not diffuse into the silicon substrate after high temperature processing. The decrease in the device effective work function (φM,eff ) observed in these samples is examined in detail. First, as a La 2O3 capping layer on HfSiO(N), the shift yields ideal-φ M,eff values for nMOSFET deices (4.0 eV) that were previously inaccessible. Other lanthanide oxides (Dy, Ho and Yb) used as capping layers show similar effects. It is also shown that tuning of φM,eff can be realized by controlling the extent of lanthanide-silicate formation. This research, conducted in conjunction with SEMATECH and the SRC, represents a significant technological advancement in realizing 45 and sub-45 nm MOSFET device nodes.

Transparent conducting oxides: A δ-doped superlattice approach

PubMed Central

Cooper, Valentino R.; Seo, Sung S. Ambrose; Lee, Suyoun; Kim, Jun Sung; Choi, Woo Seok; Okamoto, Satoshi; Lee, Ho Nyung

2014-01-01

Metallic states appearing at interfaces between dissimilar insulating oxides exhibit intriguing phenomena such as superconductivity and magnetism. Despite tremendous progress in understanding their origins, very little is known about how to control the conduction pathways and the distribution of charge carriers. Using optical spectroscopic measurements and density-functional theory (DFT) simulations, we examine the effect of SrTiO3 (STO) spacer layer thickness on the optical transparency and carrier distribution in La δ-doped STO superlattices. We experimentally observe that these metallic superlattices remain highly transparent to visible light; a direct consequence of the appropriately large gap between the O 2p and Ti 3d states. In superlattices with relatively thin STO layers, we predict that three-dimensional conduction would occur due to appreciable overlap of quantum mechanical wavefunctions between neighboring δ-doped layers. These results highlight the potential for using oxide heterostructures in optoelectronic devices by providing a unique route for creating novel transparent conducting oxides. PMID:25109668

Plasmon-induced optical switching of electrical conductivity in porous anodic aluminum oxide films encapsulated with silver nanoparticle arrays.

PubMed

Huang, Chen-Han; Lin, Hsing-Ying; Lau, Ben-Chao; Liu, Chih-Yi; Chui, Hsiang-Chen; Tzeng, Yonhua

2010-12-20

We report on plasmon induced optical switching of electrical conductivity in two-dimensional (2D) arrays of silver (Ag) nanoparticles encapsulated inside nanochannels of porous anodic aluminum oxide (AAO) films. The reversible switching of photoconductivity greatly enhanced by an array of closely spaced Ag nanoparticles which are isolated from each other and from the ambient by thin aluminum oxide barrier layers are attributed to the improved electron transport due to the localized surface plasmon resonance and coupling among Ag nanoparticles. The photoconductivity is proportional to the power, and strongly dependent on the wavelength of light illumination. With Ag nanoparticles being isolated from the ambient environments by a thin layer of aluminum oxide barrier layer of controlled thickness in nanometers to tens of nanometers, deterioration of silver nanoparticles caused by environments is minimized. The electrochemically fabricated nanostructured Ag/AAO is inexpensive and promising for applications to integrated plasmonic circuits and sensors.

Mechanical properties of monolayer graphene oxide.

PubMed

Suk, Ji Won; Piner, Richard D; An, Jinho; Ruoff, Rodney S

2010-11-23

Mechanical properties of ultrathin membranes consisting of one layer, two overlapped layers, and three overlapped layers of graphene oxide platelets were investigated by atomic force microscopy (AFM) imaging in contact mode. In order to evaluate both the elastic modulus and prestress of thin membranes, the AFM measurement was combined with the finite element method (FEM) in a new approach for evaluating the mechanics of ultrathin membranes. Monolayer graphene oxide was found to have a lower effective Young's modulus (207.6 ± 23.4 GPa when a thickness of 0.7 nm is used) as compared to the value reported for "pristine" graphene. The prestress (39.7-76.8 MPa) of the graphene oxide membranes obtained by solution-based deposition was found to be 1 order of magnitude lower than that obtained by others for mechanically cleaved graphene. The novel AFM imaging and FEM-based mapping methods presented here are of general utility for obtaining the elastic modulus and prestress of thin membranes.

Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials

NASA Astrophysics Data System (ADS)

Sadeghi, S. M.; Wing, W. J.; Gutha, R. R.; Capps, L.

2017-03-01

We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials.

PubMed

Sadeghi, S M; Wing, W J; Gutha, R R; Capps, L

2017-03-03

We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

Effect upon biocompatibility and biocorrosion properties of plasma electrolytic oxidation in trisodium phosphate electrolytes.

PubMed

Kim, Yu-Kyoung; Park, Il-Song; Lee, Kwang-Bok; Bae, Tae-Sung; Jang, Yong-Seok; Oh, Young-Min; Lee, Min-Ho

2016-03-01

Surface modification to improve the corrosion resistance and biocompatibility of the Mg-Al-Zn-Ca alloy was conducted via plasma electrolytic oxidation (PEO) in an electrolyte that included phosphate. Calcium phosphate can be easily induced on the surface of a PEO coating that includes phosphate in a physiological environment because Ca(2+) ions in body fluids can be combined with PO4 (3-). Cytotoxicity of the PEO coating formed in electrolytes with various amounts of Na3PO4 was identified. In particular, the effects that PEO films have upon oxidative stress and differentiation of osteoblast activity were studied. As the concentration of Na3PO4 in the electrolyte increased, the oxide layer was found to become thicker, which increased corrosion resistance. However, the PEO coating formed in electrolytes with over 0.2 M of added Na3PO4 exhibited more microcracks and larger pores than those formed in smaller Na3PO4 concentrations owing to a large spark discharge. A nonuniform oxide film that included more phosphate caused more cytotoxicity and oxidative stress, and overabundant phosphate content in the oxide layer interrupted the differentiation of osteoblasts. The corrosion resistance of the magnesium alloy and the thickness of the oxide layer were increased by the addition of Na3PO4 in the electrolyte for PEO treatment. However, excessive phosphate content in the oxide layer led to oxidative stress, which resulted in reduced cell viability and activity.

Controlled growth of semiconductor crystals

DOEpatents

Bourret-Courchesne, Edith D.

1992-01-01

A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

Controlled growth of semiconductor crystals

DOEpatents

Bourret-Courchesne, E.D.

1992-07-21

A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

Grain Boundary Engineering and Air Oxidation Behavior of Alloy 690

NASA Astrophysics Data System (ADS)

Xu, Peng; Zhao, Liang Y.; Sridharan, Kumar; Allen, Todd R.

Grain boundary engineering (GBE) was performed on nickel-based alloy 690 by thermomechanical processing (TMP) to alter the grain boundary character distribution (GBCD). It was found that 5% and 35% thickness reduction in single and multiple steps followed by solution annealing and water quench yielded a high fraction of special boundaries. The total length fraction of the low ∑ CSL (coincidence site lattice) was as high as 87.2%. The grain boundary network was disrupted after the TMP treatment, and the average grain size calculated after exclusion of special twin boundaries can be as much as 5 times larger than the as-received (AR) sample. The GBE sample showed better oxidation resistance compared to the AR sample during the long term air oxidation. In the cyclic oxidation test, both AR and GBE samples showed a mass gain at the beginning of the test which was then followed by a mass loss. The mass change of GBE samples oscillated after the first couple cycles, while the AR sample became relatively stable. The oxide film most likely consists of duplex structures with one stable layer that was formed inside and one unstable layer that was formed outside. The stable inner layer was the protective layer and prevented alloy 690 from further oxidation.

Control of the orbital ordering in manganite superlattices and impact on properties

NASA Astrophysics Data System (ADS)

Koçak, Ayşegül Begüm; Varignon, Julien; Lemal, Sébastien; Ghosez, Philippe; Lepetit, Marie-Bernadette

2017-09-01

The present paper theoretically studies the possibility to control the orbital ordering in manganite superlattices. Indeed, favored dz2eg -orbital occupancy is one of the proposed interpretations for the formation of a "dead" layer at the interfaces in manganite thin films and superlattices. We show here that favored dz2eg -orbital occupancy at the interfaces can be prevented by using alkaline-earth simple oxides as alternating layers in very thin superlattices. Such an alternating layer promotes the contraction of the manganite layers at the interfaces and favors a dx2-y2eg orbital occupancy. This result holds for different manganites, different alkaline-earth simple oxides, as well as different thicknesses of the two layers. While Boltzmann's transport calculations on different superlattices show unexpectedly only weak dependence of the electrical conductivity on the orbital ordering, the enhanced occupation of the dx2-y2 orbital should result in an increased Curie temperature.

In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission electron microscopy

NASA Astrophysics Data System (ADS)

Berthier, R.; Bernier, N.; Cooper, D.; Sabbione, C.; Hippert, F.; Noé, P.

2017-09-01

The crystallization mechanisms of prototypical GeTe phase-change material thin films have been investigated by in situ scanning transmission electron microscopy annealing experiments. A novel sample preparation method has been developed to improve sample quality and stability during in situ annealing, enabling quantitative analysis and live recording of phase change events. Results show that for an uncapped 100 nm thick GeTe layer, exposure to air after fabrication leads to composition changes which promote heterogeneous nucleation at the oxidized surface. We also demonstrate that protecting the GeTe layer with a 10 nm SiN capping layer prevents nucleation at the surface and allows volume nucleation at a temperature 50 °C higher than the onset of crystallization in the oxidized sample. Our results have important implications regarding the integration of these materials in confined memory cells.

Roll-to-Roll Processing of Inverted Polymer Solar Cells using Hydrated Vanadium(V)Oxide as a PEDOT:PSS Replacement

PubMed Central

Espinosa, Nieves; Dam, Henrik Friis; Tanenbaum, David M.; Andreasen, Jens W.; Jørgensen, Mikkel; Krebs, Frederik C.

2011-01-01

The use of hydrated vanadium(V)oxide as a replacement of the commonly employed hole transporting material PEDOT:PSS was explored in this work. Polymer solar cells were prepared by spin coating on glass. Polymer solar cells and modules comprising 16 serially connected cells were prepared using full roll-to-roll (R2R) processing of all layers. The devices were prepared on flexible polyethyleneterphthalate (PET) and had the structure PET/ITO/ZnO/P3HT:PCBM/V2O5·(H2O)n/Ag. The ITO and silver electrodes were processed and patterned by use of screen printing. The zinc oxide, P3HT:PCBM and vanadium(V)oxide layers were processed by slot-die coating. The hydrated vanadium(V)oxide layer was slot-die coated using an isopropanol solution of vanadyl-triisopropoxide (VTIP). Coating experiments were carried out to establish the critical thickness of the hydrated vanadium(V)oxide layer by varying the concentration of the VTIP precursor over two orders of magnitude. Hydrated vanadium(V)oxide layers were characterized by profilometry, scanning electron microscopy, energy dispersive X-ray spectroscopy, and grazing incidence wide angle X-ray scattering. The power conversion efficiency (PCE) for completed modules was up to 0.18%, in contrast to single cells where efficiencies of 0.4% were achieved. Stability tests under indoor and outdoor conditions were accomplished over three weeks on a solar tracker. PMID:28879984

Roll-to-Roll Processing of Inverted Polymer Solar Cells using Hydrated Vanadium(V)Oxide as a PEDOT:PSS Replacement.

PubMed

Espinosa, Nieves; Dam, Henrik Friis; Tanenbaum, David M; Andreasen, Jens W; Jørgensen, Mikkel; Krebs, Frederik C

2011-01-11

The use of hydrated vanadium(V)oxide as a replacement of the commonly employed hole transporting material PEDOT:PSS was explored in this work. Polymer solar cells were prepared by spin coating on glass. Polymer solar cells and modules comprising 16 serially connected cells were prepared using full roll-to-roll (R2R) processing of all layers. The devices were prepared on flexible polyethyleneterphthalate (PET) and had the structure PET/ITO/ZnO/P3HT:PCBM/V₂O₅·(H₂O) n /Ag. The ITO and silver electrodes were processed and patterned by use of screen printing. The zinc oxide, P3HT:PCBM and vanadium(V)oxide layers were processed by slot-die coating. The hydrated vanadium(V)oxide layer was slot-die coated using an isopropanol solution of vanadyl-triisopropoxide (VTIP). Coating experiments were carried out to establish the critical thickness of the hydrated vanadium(V)oxide layer by varying the concentration of the VTIP precursor over two orders of magnitude. Hydrated vanadium(V)oxide layers were characterized by profilometry, scanning electron microscopy, energy dispersive X-ray spectroscopy, and grazing incidence wide angle X-ray scattering. The power conversion efficiency (PCE) for completed modules was up to 0.18%, in contrast to single cells where efficiencies of 0.4% were achieved. Stability tests under indoor and outdoor conditions were accomplished over three weeks on a solar tracker.

Stressor-layer-induced elastic strain sharing in SrTiO 3 complex oxide sheets

DOE PAGES

Tilka, J. A.; Park, J.; Ahn, Y.; ...

2018-02-26

A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO 3 sheets using a silicon nitride stressor layer. A conformal stressor layer deposited using plasma-enhanced chemical vapor deposition produces an elastic strain in the sheet consistent with the magnitude of the nitride residual stress. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO 3 sheets is on the order of 10 -4, matching the predictions of an elastic model. Using this approach to elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect notmore » achievable in heteroepitaxy on rigid substrates.« less

Stressor-layer-induced elastic strain sharing in SrTiO 3 complex oxide sheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tilka, J. A.; Park, J.; Ahn, Y.

A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO 3 sheets using a silicon nitride stressor layer. A conformal stressor layer deposited using plasma-enhanced chemical vapor deposition produces an elastic strain in the sheet consistent with the magnitude of the nitride residual stress. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO 3 sheets is on the order of 10 -4, matching the predictions of an elastic model. Using this approach to elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect notmore » achievable in heteroepitaxy on rigid substrates.« less

Interface ferromagnetism in oxide superlattices of CaMnO3/CaRuO3

NASA Astrophysics Data System (ADS)

Takahashi, K. S.; Kawasaki, M.; Tokura, Y.

2001-08-01

Oxide superlattices composed of antiferromagnetic insulator layers of CaMnO3 (10 unit cells) and paramagnetic metal layers of CaRuO3 (N unit cells) were fabricated on LaAlO3 substrates by pulsed-laser deposition. All the superlattices show ferromagnetic transitions at an almost identical temperature (TC˜95 K) and negative magnetoresistance below TC. Each magnetization and magnetoconductance of the whole superlattice at 5 K is constant and independent of CaRuO3 layer thickness when normalized by the number of the interfaces between CaMnO3 and CaRuO3. These results indicate that the ferromagnetism shows up only at the interface and is responsible for the magnetoresistance.

Experimental studies of MOS inversion and accumulation layers: Quantum mechanical effects and mobility

NASA Astrophysics Data System (ADS)

Chindalore, Gowrishankar L.

The development of fast, multi-functional, and energy efficient integrated circuits, is made possible by aggressively scaling the gate lengths of the MOS devices into the sub-quarter micron regime. However, with the increasing cost of fabrication, there is a strong need for the development of reliable and accurate device simulation capabilities. The development of the theoretical models for simulators is guided by extensive experimental data, which enable an experimental verification of the models, and lead to a better understanding of the underlying physics. This dissertation presents the methodology and the results for one such experimental effort, where two important physical effects in the inversion layer and the accumulation layer of a MOS device, namely, the quantum mechanical (QM) effects and the carrier mobility are investigated. Accordingly, this dissertation has been divided into two parts, with the first part discussing the increase in the threshold voltage and the accumulation electrical oxide thickness due to QM effects. The second part discusses the methodology and the experimental results for the extraction of the majority carrier mobilities in the accumulation layers of a MOSFET. The continued scaling of the MOS gate length requires decreased gate oxide thickness (tox) and increased channel doping (NB) in order to improve device performance while suppressing the short- channel effects. The combination of the two result in large enough transverse electric fields to cause significant quantization of the carriers in the potential well at the Si/SiO2 interface. Hence, compared to the classical calculations (where the QM effects are ignored), the QM effects are found to lead to an increase in the experimental threshold voltage by approximately 100mV, and an overestimation of the physical oxide thickness by approximately 3-4A, in MOSFET devices with a gate oxide thickness and the doping level anticipated for technologies with sub-quarter micron gate lengths. Thus, the experimental results indicate the need for using accurate QM models for simulating sub-quarter micron devices. Carrier mobility is a fundamental semiconductor device transport parameter that has been extensively characterized for both electrons and holes in the silicon bulk and MOS inversion layers. Accumulation layer mobility (μacc) has become increasingly important as the MOS devices have scaled to deep submicron gate lengths, and much effort has been required to achieve increased drive current. However, very little experimental data has been reported for carrier mobility in the MOS accumulation layers (Sun80, Man89). Hence, in this research work, the accumulation layer mobilities were extracted using buried-channel MOSFETs for both the electrons and holes, and for a wide range of doping levels at temperatures ranging from 25C to 150C. The experimental μacc is found to be greater than the corresponding bulk and the inversion layer mobilities, at low to moderate effective fields. However, at very high effective fields, where phonon and surface roughness scattering are dominant, the mobility behavior is found to be very similar to that of the inversion carriers. The extensive set of experimental data will enable the development of accurate local accumulation mobility models for inclusion in 2-D device simulators.

Ruthenium nano-oxide layer in CoFe-Ru-CoFe trilayer system: An x-ray reflectivity study

NASA Astrophysics Data System (ADS)

Asgharizadeh, S.; Sutton, M.; Altounian, Z.; Mao, M.; Lee, C. L.

2008-05-01

A grazing incidence x-ray reflectivity technique is used to determine the electron density profile as a function of depth in CoFe-Ru-CoFe and CoFe-Ru nano-oxide layer (NOL)-CoFe trilayers. Four trilayers with ruthenium thicknesses of 8, 8.5, and 9Å and one with Ru 8.5Å NOL, prepared by a dc planetary sputtering system, were investigated. For all samples, the electron density profile (EDP) shows a central peak that is related to the Ru layer. Natural oxidation in all of the samples introduces a graded EDP of the top CoFe layers, which decreases gradually to zero. The large surface resistivity of Ru 8.5Å NOL as compared to Ru 8.5Å is related to the remarkable difference between their EDPs. EDP changes have also been investigated in Ru NOL trilayers after annealing at 280°C. The Ru phase in the EDP was observed to confirm the thermal stability of the spacer layer after annealing.

AES study on the chemical composition of ferroelectric BaTiO3 thin films RF sputter-deposited on silicon

NASA Technical Reports Server (NTRS)

Dharmadhikari, V. S.; Grannemann, W. W.

1983-01-01

AES depth profiling data are presented for thin films of BaTiO3 deposited on silicon by RF sputtering. By profiling the sputtered BaTiO3/silicon structures, it was possible to study the chemical composition and the interface characteristics of thin films deposited on silicon at different substrate temperatures. All the films showed that external surface layers were present, up to a few tens of angstroms thick, the chemical composition of which differed from that of the main layer. The main layer had stable composition, whereas the intermediate film-substrate interface consisted of reduced TiO(2-x) oxides. The thickness of this intermediate layer was a function of substrate temperature. All the films showed an excess of barium at the interface. These results are important in the context of ferroelectric phenomena observed in BaTiO3 thin films.

Variable angle spectroscopic ellipsometry - Application to GaAs-AlGaAs multilayer homogeneity characterization

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Snyder, Paul G.; Merkel, Kenneth G.; Woollam, John A.; Radulescu, David C.

1988-01-01

Variable angle spectroscopic ellipsometry has been applied to a GaAs-AlGaAs multilayer structure to obtain a three-dimensional characterization, using repetitive measurements at several spots on the same sample. The reproducibility of the layer thickness measurements is of order 10 A, while the lateral dimension is limited by beam diameter, presently of order 1 mm. Thus, the three-dimensional result mainly gives the sample homogeneity. In the present case three spots were used to scan the homogeneity over 1 in of a wafer which had molecular-beam epitaxially grown layers. The thickness of the AlGaAs, GaAs, and oxide layers and the Al concentration varied by 1 percent or less from edge to edge. This result was confirmed by two methods of data analysis. No evidence of an interfacial layer was observed on top of the AlGaAs.

Fabrication of por-Si/SnO{sub x} nanocomposite layers for gas microsensors and nanosensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolotov, V. V., E-mail: bolotov@obisp.oscsbras.ru; Korusenko, P. M.; Nesov, S. N.

2011-05-15

Two-phase nanocomposite layers based on porous silicon and nonstoichiometric tin oxide were fabricated by various methods. The structure, as well as elemental and phase composition, of the obtained nanocomposites were studied using transmission and scanning electron microscopy, Raman spectroscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. The results obtained confirm the formation of nanocomposite layers with a thickness as large as 2 {mu}m thick and SnO{sub x} stoichiometry coefficients x = 1.0-2.0. Significant tin diffusion into the porous silicon matrix with D{sub eff} Almost-Equal-To 10{sup -14} cm{sup 2} s{sup -1} was observed upon annealing at 770 K. Test sensor structuresmore » based on por-Si/SnO{sub x} nanocomposite layers grown by magnetron deposition showed fairly high stability of properties and sensitivity to NO{sub 2}.« less

Comparison of NBG-18, NBG-17, IG-110 and IG-11 oxidation kinetics in air

NASA Astrophysics Data System (ADS)

Lee, Jo Jo; Ghosh, Tushar K.; Loyalka, Sudarshan K.

2018-03-01

The oxidation rates of several nuclear-grade graphites, NBG-18, NBG-17, IG-110 and IG-11, were measured in air using thermogravimetry. Kinetic parameters and oxidation behavior for each grade were compared by coke type, filler grain size and microstructure. The thickness of the oxidized layer for each grade was determined by layer peeling and direct density measurements. The results for NBG-17 and IG-11 were compared with those available in the literature and our recently reported results for NBG-18 and IG-110 oxidation in air. The finer-grained graphites IG-110 and IG-11 were more oxidized than medium-grained NBG-18 and NBG-17 because of deeper oxidant penetration, higher porosity and higher probability of available active sites. Variation in experimental conditions also had a marked effect on the reported kinetic parameters by several studies. Kinetic parameters such as activation energy and transition temperature were sensitive to air flow rates as well as sample size and geometry.

Layer-by-layer epitaxial growth of defect-engineered strontium cobaltites

DOE PAGES

Andersen, Tassie K.; Cook, Seyoung; Wan, Gang; ...

2018-01-18

Here, control over structure and composition of (ABO 3) perovskite oxides offers exciting opportunities since these materials possess unique, tunable properties. Perovskite oxides with cobalt B-site cations are particularly promising, as the range of the cation’s stable oxidation states leads to many possible structural frameworks. Here, we report growth of strontium cobalt oxide thin films by molecular beam epitaxy, and conditions necessary to stabilize different defect concentration phases. In situ X-ray scattering is used to monitor structural evolution during growth, while in situ X-ray absorption near-edge spectroscopy is used to probe oxidation state and measure changes to oxygen vacancy concentrationmore » as a function of film thickness. Experimental results are compared to kinetically-limited thermodynamic predictions, in particular, solute trapping, with semi-quantitative agreement. Agreement between observations of dependence of cobaltite phase on oxidation activity and deposition rate, and predictions indicates that a combined experimental/theoretical approach is key to understanding phase behavior in the strontium cobalt oxide system.« less

Layer-by-layer epitaxial growth of defect-engineered strontium cobaltites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andersen, Tassie K.; Cook, Seyoung; Wan, Gang

Here, control over structure and composition of (ABO 3) perovskite oxides offers exciting opportunities since these materials possess unique, tunable properties. Perovskite oxides with cobalt B-site cations are particularly promising, as the range of the cation’s stable oxidation states leads to many possible structural frameworks. Here, we report growth of strontium cobalt oxide thin films by molecular beam epitaxy, and conditions necessary to stabilize different defect concentration phases. In situ X-ray scattering is used to monitor structural evolution during growth, while in situ X-ray absorption near-edge spectroscopy is used to probe oxidation state and measure changes to oxygen vacancy concentrationmore » as a function of film thickness. Experimental results are compared to kinetically-limited thermodynamic predictions, in particular, solute trapping, with semi-quantitative agreement. Agreement between observations of dependence of cobaltite phase on oxidation activity and deposition rate, and predictions indicates that a combined experimental/theoretical approach is key to understanding phase behavior in the strontium cobalt oxide system.« less

Layer-by-Layer Epitaxial Growth of Defect-Engineered Strontium Cobaltites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andersen, Tassie K.; Cook, Seyoung; Wan, Gang

Control over structure and composition of (ABO(3)) perovskite oxides offers exciting opportunities since these materials possess unique, tunable properties. Perovskite oxides with cobalt B-site cations are particularly promising, as the range of the cations stable oxidation states leads to many possible structural frameworks. Here, we report growth of strontium cobalt oxide thin films by molecular beam epitaxy, and conditions necessary to stabilize different defect concentration phases. In situ X-ray scattering is used to monitor structural evolution during growth, while in situ X-ray absorption near-edge spectroscopy is used to probe oxidation state and measure changes to oxygen vacancy concentration as amore » function of film thickness. Experimental results are compared to kinetically limited thermodynamic predictions, in particular, solute trapping, with semiquantitative agreement. Agreement between observations of dependence of cobaltite phase on oxidation activity and deposition rate, and predictions indicates that a combined experimental/theoretical approach is key to understanding phase behavior in the strontium cobalt oxide system.« less

Ta2O5/ Al2O3/ SiO2 - antireflective coating for non-planar optical surfaces by atomic layer deposition

NASA Astrophysics Data System (ADS)

Pfeiffer, K.; Schulz, U.; Tünnermann, A.; Szeghalmi, A.

2017-02-01

Antireflective coatings are essential to improve transmittance of optical elements. Most research and development of AR coatings has been reported on a wide variety of plane optical surfaces; however, antireflection is also necessary on nonplanar optical surfaces. Physical vapor deposition (PVD), a common method for optical coatings, often results in thickness gradients on strongly curved surfaces, leading to a failure of the desired optical function. In this work, optical thin films of tantalum pentoxide, aluminum oxide and silicon dioxide were prepared by atomic layer deposition (ALD), which is based on self-limiting surface reactions. The results demonstrate that ALD optical layers can be deposited on both vertical and horizontal substrate surfaces with uniform thicknesses and the same optical properties. A Ta2O5/Al2O3/ SiO2 multilayer AR coating (400-700 nm) was successfully applied to a curved aspheric glass lens with a diameter of 50 mm and a center thickness of 25 mm.

Surface engineering with functional random copolymers for nanolithographic applications

NASA Astrophysics Data System (ADS)

Sparnacci, Katia; Antonioli, Diego; Gianotti, Valentina; Lupi, Federico Ferrarese; Giammaria, Tommaso Jacopo; Seguini, Gabriele; Perego, Michele; Laus, Michele

2016-05-01

Hydroxyl-terminated P(S-r-MMA) random copolymers with molecular weight ranging from 1.7 to 69 kg/mol and a styrene unit fraction of 61% were grafted onto a silicon oxide surface and subsequently used to study the orientation of domains with respect to the substrate, in cylinder-forming PS-b-PMMA block copolymer thin films. When the thickness (H) of the grafted layer is greater than 5-6 nm, a perpendicular orientation is always observed because of the efficient decoupling of the BCP film from the polar SiO2 surface. Conversely, if H is less than 5 nm, the critical thickness of the grafted layer, which allows the neutralization of the substrate and promotion of the perpendicular orientation of the nanodomains in the BCP film, is found to depend on the Mn of the RCP. In particular, when Mn = 1700, a 2.0 nm thick grafted layer is sufficient to promote the perpendicular orientation of the PMMA cylinders in the PS-b-PMMA BCP film.

Acceptance Test Data for BWXT Coated Particle Batch 93164A Defective IPyC Fraction and Pyrocarbon Anisotropy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Helmreich, Grant W.; Hunn, John D.; Skitt, Darren J.

2017-02-01

Coated particle fuel batch J52O-16-93164 was produced by Babcock and Wilcox Technologies (BWXT) for possible selection as fuel for the Advanced Gas Reactor Fuel Development and Qualification (AGR) Program’s AGR-5/6/7 irradiation test in the Idaho National Laboratory (INL) Advanced Test Reactor (ATR), or may be used as demonstration production-scale coated particle fuel for other experiments. The tristructural-isotropic (TRISO) coatings were deposited in a 150-mm-diameter production-scale fluidizedbed chemical vapor deposition (CVD) furnace onto 425-μm-nominal-diameter spherical kernels from BWXT lot J52L-16-69316. Each kernel contained a mixture of 15.5%-enriched uranium carbide and uranium oxide (UCO) and was coated with four consecutive CVD layers:more » a ~50% dense carbon buffer layer with 100-μm-nominal thickness, a dense inner pyrolytic carbon (IPyC) layer with 40-μm-nominal thickness, a silicon carbide (SiC) layer with 35-μm-nominal thickness, and a dense outer pyrolytic carbon (OPyC) layer with 40-μm-nominal thickness. The TRISO-coated particle batch was sieved to upgrade the particles by removing over-sized and under-sized material, and the upgraded batch was designated by appending the letter A to the end of the batch number (i.e., 93164A).« less

Multinuclear NMR studies of single lipid bilayers supported in cylindrical aluminum oxide nanopores.

PubMed

Gaede, Holly C; Luckett, Keith M; Polozov, Ivan V; Gawrisch, Klaus

2004-08-31

Lipid bilayers were deposited inside the 0.2 microm pores of anodic aluminum oxide (AAO) filters by extrusion of multilamellar liposomes and their properties studied by 2H, 31P, and 1H solid-state NMR. Only the first bilayer adhered strongly to the inner surface of the pores. Additional layers were washed out easily by a flow of water as demonstrated by 1H magic angle spinning NMR experiments with addition of Pr3+ ions to shift accessible lipid headgroup resonances. A 13 mm diameter Anopore filter of 60 microm thickness oriented approximately 2.5 x 10(-7) mol of lipid as a single bilayer, corresponding to a total membrane area of about 500 cm2. The 2H NMR spectra of chain deuterated POPC are consistent with adsorption of wavy, tubular bilayers to the inner pore surface. By NMR diffusion experiments, we determined the average length of those lipid tubules to be approximately 0.4 microm. There is evidence for a thick water layer between lipid tubules and the pore surface. The ends of tubules are well sealed against the pore such that Pr3+ ions cannot penetrate into the water underneath the bilayers. We successfully trapped poly(ethylene glycol) (PEG) with a molecular weight of 8000 in this water layer. From the quantity of trapped PEG, we calculated an average water layer thickness of 3 nm. Lipid order parameters and motional properties are unperturbed by the solid support, in agreement with existence of a water layer. Such unperturbed, solid supported membranes are ideal for incorporation of membrane-spanning proteins with large intra- and extracellular domains. The experiments suggest the promise of such porous filters as membrane support in biosensors.

Atomic Layer Deposition of TiO2 for a High-Efficiency Hole-Blocking Layer in Hole-Conductor-Free Perovskite Solar Cells Processed in Ambient Air.

PubMed

Hu, Hang; Dong, Binghai; Hu, Huating; Chen, Fengxiang; Kong, Mengqin; Zhang, Qiuping; Luo, Tianyue; Zhao, Li; Guo, Zhiguang; Li, Jing; Xu, Zuxun; Wang, Shimin; Eder, Dominik; Wan, Li

2016-07-20

In this study we design and construct high-efficiency, low-cost, highly stable, hole-conductor-free, solid-state perovskite solar cells, with TiO2 as the electron transport layer (ETL) and carbon as the hole collection layer, in ambient air. First, uniform, pinhole-free TiO2 films of various thicknesses were deposited on fluorine-doped tin oxide (FTO) electrodes by atomic layer deposition (ALD) technology. Based on these TiO2 films, a series of hole-conductor-free perovskite solar cells (PSCs) with carbon as the counter electrode were fabricated in ambient air, and the effect of thickness of TiO2 compact film on the device performance was investigated in detail. It was found that the performance of PSCs depends on the thickness of the compact layer due to the difference in surface roughness, transmittance, charge transport resistance, electron-hole recombination rate, and the charge lifetime. The best-performance devices based on optimized TiO2 compact film (by 2000 cycles ALD) can achieve power conversion efficiencies (PCEs) of as high as 7.82%. Furthermore, they can maintain over 96% of their initial PCE after 651 h (about 1 month) storage in ambient air, thus exhibiting excellent long-term stability.

Middle Electrode in a Vertical Transistor Structure Using an Sn Layer by Thermal Evaporation

NASA Astrophysics Data System (ADS)

Nogueira, Gabriel Leonardo; da Silva Ozório, Maiza; da Silva, Marcelo Marques; Morais, Rogério Miranda; Alves, Neri

2018-05-01

We report a process for performing the middle electrode for a vertical field effect transistor (VOFET) by the evaporation of a tin (Sn) layer. Bare aluminum oxide (Al2O3), obtained by anodization, and Al2O3 covered with a polymethylmethacrylate (PMMA) layer were used as the gate dielectric. We measured the electrical resistance of Sn while the evaporation was carried out to find the best condition to prepare the middle electrode, that is, good lateral conduction associated with openings that give permeability to the electric field in a vertical direction. This process showed that 55 nm Sn thick is suitable for use in a VOFET, being easier to achieve optimal thickness when the Sn is evaporated onto PMMA than onto bare Al2O3. The addition of a PMMA layer on the Al2O3 surface modifies the morphology of the Sn layer, resulting in a lowering of the threshold voltage. The values of threshold voltage and electric field, VTH = - 8 V and ETH = 354.5 MV/m respectively, were calculated using an Al2O3 film 20 nm thick covered with a 14 nm PMMA layer as gate dielectric, while for bare Al2O3 these values were VTH = - 10 V and ETH = 500 MV/m.

The thermomechanical stability of micro-solid oxide fuel cells fabricated on anodized aluminum oxide membranes

NASA Astrophysics Data System (ADS)

Kwon, Chang-Woo; Lee, Jae-Il; Kim, Ki-Bum; Lee, Hae-Weon; Lee, Jong-Ho; Son, Ji-Won

2012-07-01

The thermomechanical stability of micro-solid oxide fuel cells (micro-SOFCs) fabricated on an anodized aluminum oxide (AAO) membrane template is investigated. The full structure consists of the following layers: AAO membrane (600 nm)/Pt anode/YSZ electrolyte (900 nm)/porous Pt cathode. The utilization of a 600-nm-thick AAO membrane significantly improves the thermomechanical stability due to its well-known honeycomb-shaped nanopore structure. Moreover, the Pt anode layer deposited in between the AAO membrane and the YSZ electrolyte preserves its integrity in terms of maintaining the triple-phase boundary (TPB) and electrical conductivity during high-temperature operation. Both of these results guarantee thermomechanical stability of the micro-SOFC and extend the cell lifetime, which is one of the most critical issues in the fabrication of freestanding membrane-type micro-SOFCs.

About complex refractive index of black Si

NASA Astrophysics Data System (ADS)

Pinčík, Emil; Brunner, Robert; Kobayashi, Hikaru; Mikula, Milan

2017-12-01

The paper deals with the complex refractive index in the IR light region of two types of samples (i) as prepared black silicon, and (ii) thermally oxidized black silicon (BSi) nano-crystalline specimens produced both by the surface structure chemical transfer method using catalytic Ag evaporated spots (as prepared sample) and by the catalytic Pt catalytic mesh (thermally oxidized sample). We present, compare, and discuss the values of the IR complex refractive index obtained by calculation using the Kramers-Krönig transformation. Results indicate that small differences between optical properties of as prepared black Si and thermally oxidized BSi are given by: (i) - oxidation procedure, (ii) - thickness of the formed black Si layer, mainly, not by utilization of different catalytic metals, and by iii) the different thickness. Contamination of the surface by different catalytic metals contributes almost equally to the calculated values of the corresponding complex refractive index.

Resistance Switching Memory Characteristics of Si/CaF2/CdF2 Quantum-Well Structures Grown on Metal (CoSi2) Layer

NASA Astrophysics Data System (ADS)

Denda, Junya; Uryu, Kazuya; Watanabe, Masahiro

2013-04-01

A novel scheme of resistance switching random access memory (ReRAM) devices fabricated using Si/CaF2/CdF2/CaF2/Si quantum-well structures grown on metal CoSi2 layer formed on a Si substrate has been proposed, and embryonic write/erase memory operation has been demonstrated at room temperature. It has been found that the oxide-mediated epitaxy (OME) technique for forming the CoSi2 layer on Si dramatically improves the stability and reproducibility of the current-voltage (I-V) curve. This technology involves 10-nm-thick Co layer deposition on a protective oxide prepared by boiling in a peroxide-based solution followed by annealing at 550 °C for 30 min for silicidation in ultrahigh vacuum. A switching voltage of lower than 1 V, a peak current density of 32 kA/cm2, and an ON/OFF ratio of 10 have been observed for the sample with the thickness sequence of 0.9/0.9/2.5/0.9/5.0 nm for the respective layers in the Si/CaF2/CdF2/CaF2/Si structure. Results of surface morphology analysis suggest that the grain size of crystal islands with flat surfaces strongly affects the quality of device characteristics.

Phase constitution in the interfacial region of laser penetration brazed magnesium–steel joints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miao, Yugang; Han, Duanfeng, E-mail: handuanfeng@gmail.com; Xu, Xiangfang

2014-07-01

The phase constitution in the interfacial region of laser penetration brazed magnesium–steel joints was investigated using electron microscopy. From the distribution of elements, the transition zone was mainly composed of elements Mg and Fe along with some Al and O. Furthermore, the transition layer consisted mainly of intermetallic compounds and metal oxides. The compounds were identified as Al-rich phases, such as Mg{sub 17}Al{sub 12}, Mg{sub 2}Al{sub 3}, FeAl and Fe{sub 4}Al{sub 13}. More noteworthy was that the thickness of the transition layer was determined by Fe–Al compounds. The presence of FeAl and Fe{sub 4}Al{sub 13} was a result of themore » complex processes that were associated with the interfacial reaction of solid steel and liquid Mg–Al alloy. - Highlights: • A technology of laser penetration brazed Mg alloy and steel has been developed. • The interface of Mg/Fe dissimilar joints was investigated using electron microscopy. • The transition layer consisted of intermetallic compounds and metal oxides. • Moreover, the thickness of transition layer was determined by Fe/Al compounds. • The presence of FeAl and Fe{sub 4}Al{sub 13} was associated with the interfacial reaction.« less

Characterization of Thermal Oxides on 4H-SiC Epitaxial Substrates Using Fourier-Transform Infrared Spectroscopy.

PubMed

Seki, Hirofumi; Yoshikawa, Masanobu; Kobayashi, Takuma; Kimoto, Tsunenobu; Ozaki, Yukihiro

2017-05-01

Fourier transform infrared (FT-IR) spectra were measured for thermal oxides with different electrical properties grown on 4H-SiC substrates. The peak frequency of the transverse optical (TO) phonon mode was blue-shifted by 5 cm -1 as the oxide-layer thickness decreased to 3 nm. The blue shift of the TO mode indicates interfacial compressive stress in the oxide. Comparison of data for the oxide on a SiC substrate with that for similar oxides on a Si substrate implies that the peak shift of the TO mode at the SiO 2 /SiC interface is larger than that of SiO 2 /Si, which suggests that the interfacial stress for the oxide on the SiC substrate is larger than that on the Si substrate. For the SiO 2 /SiC interfacial region (<3 nm oxide thickness), despite the fact that the blue shift of the TO modes becomes larger while approaching the oxide/SiC interface, the peak frequency of the TO modes red-shifts at the oxide/SiC interface. The peak-frequency shift of the TO mode for the sample without post-oxidation annealing was larger than that for the samples post-annealed in a nitric oxide atmosphere. The channel mobilities are correlated with the degree of shift of the TO mode when the oxide thickness is <3 nm. It appears that the compressive stress at the SiO 2 /SiC interface generates silicon suboxide components and weakens the Si-O bonds. As the result, the TO mode was red-shifted and the oxygen deficiency increased to relax the compressive stress in the oxide with <3 nm thickness. Fourier transform infrared spectroscopy measurements provide unique and useful information about stress and inhomogeneity at the oxide/SiC interface.

The study of multilayer anti-reflection coating in InSb focal plane detector

NASA Astrophysics Data System (ADS)

Zheng, Kelin; Wei, Peng; Wang, Liwen; Su, Xianjun; Wang, Haizhen

2016-10-01

In manufacturing of InSb focal plane detector, InSb chip have to be polished from backside to reduce its thickness and then be plated a layer of coating to decrease its reflection (enhance its transmittance) for infrared ray. Moreover, the anti-reflection coating has to be multilayer for more anti-reflection bandwidth. In this article, it is introduced that the optimal design of triple layer λ/4 anti-reflection coating——the anodic oxide, SiNx and MgF2. The best thickness range of each layer and its theoretical reflective index are calculated from simulation software, until the refractive index of each layer has been measured by ellipsometer. And then the transmissivity and reflectivity of the triple layer coating are measured for testing and verifying its performance on the transmittance and reflection. In the end, the anti-reflective effect of the triple layer coating and monolayer SiNx coating are respectively measured and compared by infrared focal plane array measurement system. And it is showed that this triple layer coating achieved more anti-reflection bandwidth and better anti reflective effect.

Magnetism and electronic structure at the interface of a metal CaRuO3 and Mott insulator CaMnO3.

NASA Astrophysics Data System (ADS)

Boris, Alexander; Freeland, John; Kavich, Jerald; Lee, Ho Nyung; Yordanov, Petar; Khaliullin, Giniyat; Keimer, Bernhard; Chakhalian, Jak

2007-03-01

Recent advances in fabrication of ultra-thin complex oxide heterostructures have opened new opportunities to investigate possible novel quantum states at the correlated interfaces. With this aim we fabricated ultra-thin superlattices of CaMnO3(CMO)/CaRuO3(CRO) with the thickness of CRO layers from 1 to 12 unit cells by laser MBE. Electronic properties of CRO/CMO were investigated by soft x-ray spectroscopies at the L-edges of Mn and Ru. SQUID and optical reflectivity revealed a ferromagnetic thickness-independent transition at Tc 100K and CRO thickness-dependent negative magnetoresistance. This behavior is in marked contrast to the individual layers. At the interface we found a clear sign of net magnetic moment on Mn, which saturates only at magnetic field of 5T. Unlike CMO, similar measurements at the Ru L3-edge showed no detectable magnetism in the field up to 5T. Comparison with Ru references confirmed Ru(IV) oxidation state. These findings are in the sharp contrast with previously suggested models involving Ru(IV-V) valency exchange and thus reveal intricate nature of the interface between a metal and Mott insulator.

TEM/STEM study of Zircaloy-2 with protective FeAl(Cr) layers under simulated BWR environment and high-temperature steam exposure

NASA Astrophysics Data System (ADS)

Park, Donghee; Mouche, Peter A.; Zhong, Weicheng; Mandapaka, Kiran K.; Was, Gary S.; Heuser, Brent J.

2018-04-01

FeAl(Cr) thin-film depositions on Zircaloy-2 were studied using transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) with respect to oxidation behavior under simulated boiling water reactor (BWR) conditions and high-temperature steam. Columnar grains of FeAl with Cr in solid solution were formed on Zircaloy-2 coupons using magnetron sputtering. NiFe2O4 precipitates on the surface of the FeAl(Cr) coatings were observed after the sample was exposed to the simulated BWR environment. High-temperature steam exposure resulted in grain growth and consumption of the FeAl(Cr) layer, but no delamination at the interface. Outward Al diffusion from the FeAl(Cr) layer occurred during high-temperature steam exposure (700 °C for 3.6 h) to form a 100-nm-thick alumina oxide layer, which was effective in mitigating oxidation of the Zircaloy-2 coupons. Zr intermetallic precipitates formed near the FeAl(Cr) layer due to the inward diffusion of Fe and Al. The counterflow of vacancies in response to the Al and Fe diffusion led to porosity within the FeAl(Cr) layer.

Nanometer-resolved chemical analyses of femtosecond laser-induced periodic surface structures on titanium

NASA Astrophysics Data System (ADS)

Kirner, Sabrina V.; Wirth, Thomas; Sturm, Heinz; Krüger, Jörg; Bonse, Jörn

2017-09-01

The chemical characteristics of two different types of laser-induced periodic surface structures (LIPSS), so-called high and low spatial frequency LIPSS (HSFL and LSFL), formed upon irradiation of titanium surfaces by multiple femtosecond laser pulses in air (30 fs, 790 nm, 1 kHz), are analyzed by various optical and electron beam based surface analytical techniques, including micro-Raman spectroscopy, energy dispersive X-ray analysis, X-ray photoelectron spectroscopy, and Auger electron spectroscopy. The latter method was employed in a high-resolution mode being capable of spatially resolving even the smallest HSFL structures featuring spatial periods below 100 nm. In combination with an ion sputtering technique, depths-resolved chemical information of superficial oxidation processes was obtained, revealing characteristic differences between the two different types of LIPSS. Our results indicate that a few tens of nanometer shallow HSFL are formed on top of a ˜150 nm thick graded superficial oxide layer without sharp interfaces, consisting of amorphous TiO2 and partially crystallized Ti2O3. The larger LSFL structures with periods close to the irradiation wavelength originate from the laser-interaction with metallic titanium. They are covered by a ˜200 nm thick amorphous oxide layer, which consists mainly of TiO2 (at the surface) and other titanium oxide species of lower oxidation states underneath.

Rapid, conformal gas-phase formation of silica (SiO2) nanotubes from water condensates.

PubMed

Bae, Changdeuck; Kim, Hyunchul; Yang, Yunjeong; Yoo, Hyunjun; Montero Moreno, Josep M; Bachmann, Julien; Nielsch, Kornelius; Shin, Hyunjung

2013-07-07

An innovative atomic layer deposition (ALD) concept, with which nanostructures of water condensates with high aspect ratio at equilibrium in cylindrical nanopores can be transformed uniformly into silica (SiO2) at near room temperature and ambient pressure, has been demonstrated for the first time. As a challenging model system, we first prove the conversion of cylindrical water condensates in porous alumina membranes to silica nanotubes (NTs) by introducing SiCl4 as a metal reactant without involving any catalytic reaction. Surprisingly, the water NTs reproducibly transformed into silica NTs, where the wall thickness of the silica NTs deposited per cycle was found to be limited by the amount of condensed water, and it was on the orders of ten nanometers per cycle (i.e., over 50 times faster than that of conventional ALD). More remarkably, the reactions only took place for 10-20 minutes or less without vacuum-related equipment. The thickness of initially adsorbed water layers in cylindrical nanopores was indirectly estimated from the thickness of formed SiO2 layers. With systematic experimental designs, we tackle the classical Kelvin equation in the nanosized pores, and the role of van der Waals forces in the nanoscale wetting phenomena, which is a long-standing issue lacking experimental insight. Moreover, we show that the present strategy is likely generalized to other oxide systems such as TiO2. Our approach opens up a new avenue for ultra-simple preparation of porous oxides and allows for the room temperature formation of dielectric layers toward organic electronic and photovoltaic applications.

Co-extrusion of electrolyte/anode functional layer/anode triple-layer ceramic hollow fibres for micro-tubular solid oxide fuel cells-electrochemical performance study

NASA Astrophysics Data System (ADS)

Li, Tao; Wu, Zhentao; Li, K.

2015-01-01

In this study, the effects of an anode functional layer (AFL) with controlled thickness on physical and electrochemical properties of a micro-tubular SOFC have been systematically studied. A series of electrolyte/AFL/anode triple-layer hollow fibres with controllable AFL thicknesses (16.9-52.7 μm) have been fabricated via a single-step phase-inversion assisted co-extrusion technique. Both robustness of the cell and gas-tightness of the electrolyte layer are considerably improved by introducing the AFL of this type. The fracture force of the sample with the thickest AFL (9.67 N) almost doubles when compared to the electrolyte/anode dual-layer counterpart (5.24 N). Gas-tightness of the electrolyte layer is also considerably increased as AFL contributes to better-matched sintering behaviours between different components. Moreover, the formation of an AFL simultaneously with electrolyte and anode significantly improves the cell performances. The sample with the thinnest AFL (approximately 16.9 μm, 6% of the total anode thickness) leads to a 30% (from 0.89 to 1.21 W cm-2) increase in maximum power density, due to increased triple-phase boundaries (TPB). However, further increase in TPB from a thicker AFL is less effective for improving the cell performance, due to the substantially increased fuel diffusion resistance and subsequently higher concentration polarization. This indicates that the control over the AFL thickness is critically important in avoiding offsetting the benefits of extended TPB and consequently decreased cell performances.

Fabrication of Ta2O5/GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

NASA Astrophysics Data System (ADS)

Otani, Yohei; Itayama, Yasuhiro; Tanaka, Takuo; Fukuda, Yukio; Toyota, Hiroshi; Ono, Toshiro; Mitsui, Minoru; Nakagawa, Kiyokazu

2007-04-01

The authors have fabricated germanium (Ge) metal-insulator-semiconductor (MIS) structures with a 7-nm-thick tantalum pentaoxide (Ta2O5)/2-nm-thick germanium nitride (GeNx) gate insulator stack by electron-cyclotron-resonance plasma nitridation and sputtering deposition. They found that pure GeNx ultrathin layers can be formed by the direct plasma nitridation of the Ge surface without substrate heating. X-ray photoelectron spectroscopy revealed no oxidation of the GeNx layer after the Ta2O5 sputtering deposition. The fabricated MIS capacitor with a capacitance equivalent thickness of 4.3nm showed excellent leakage current characteristics. The interface trap density obtained by the modified conductance method was 4×1011cm-2eV-1 at the midgap.

Study of nickel silicide formation by physical vapor deposition techniques

NASA Astrophysics Data System (ADS)

Pancharatnam, Shanti

Metal silicides are used as contacts to the highly n-doped emitter in photovoltaic devices. Thin films of nickel silicide (NiSi) are of particular interest for Si-based solar cells, as they form at lower temperature and consume less silicon. However, interfacial oxide limits the reduction in sheet resistance. Hence, different diffusion barriers were investigated with regard to optimizing the conductivity and thermal stability. The formation of NiSi, and if it can be doped to have good contact with the n-side of a p-n junction were studied. Reduction of the interfacial oxide by the interfacial Ti layer to allow the formation of NiSi was observed. Silicon was treated in dilute hydrofluoric acid for removing the surface oxide layer. Ni and a Ti diffusion barrier were deposited on Si by physical vapor deposition (PVD) methods - electron beam evaporation and sputtering. The annealing temperature and time were varied to observe the stability of the deposited film. The films were then etched to observe the retention of the silicide. Characterization was done using scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and Rutherford back scattering (RBS). Sheet resistance was measured using the four-point probe technique. Annealing temperatures from 300°C showed films began to agglomerate indicating some diffusion between Ni and Si in the Ti layer, also supported by the compositional analysis in the Auger spectra. Films obtained by evaporation and sputtering were of high quality in terms of coverage over substrate area and uniformity. Thicknesses of Ni and Ti were optimized to 20 nm and 10 nm respectively. Resistivity was low at these thicknesses, and reduced by about half post annealing at 300°C for 8 hours. Thus a low resistivity contact was obtained at optimized thicknesses of the metal layers. It was also shown that some silicide formation occurs at temperatures starting from 300°C and can thus be used to make good silicide contacts.

The formation and potential importance of cemented layers in inactive sulfide mine tailings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blowes, D.W.; Reardon, E.J.; Cherry, J.A.

Investigations of inactive sulfide-rich tailings impoundments at the Heath Steele (New Brunswick) and Waite Amulet (Quebec) minesites have revealed two distinct types of cemented layers or hardpans. That at Heath Steele is 10-15 cm thick, occurs 20-30 cm below the depth of active oxidation, is continuous throughout the tailings impoundment, and is characterized by cementation of tailings by gypsum and Fe(II) solid phases, principally melanterite. Hardpan at the Waite Amulet site is only 1-5 cm thick, is laterally discontinuous (10-100 cm), occurs at the depth of active oxidation, and is characterized by cementation of tailings by Fe(III) minerals, principally goethite,more » lepidocrocite, ferrihydrite, and jarosite. At Heath Steele, an accumulation of gas-phase CO{sub 2}, of up to 60{percent} of the pore gas, occurs below the hardpan. The calculated diffusivity of the hardpan layer is only about 1/100 that of the overlying, uncemented tailings. The pore-water chemistry at Heath Steele has changed little over a 10-year period, suggesting that the cemented layer restricts the movement of dissolved metals through the tailings and also acts as a zone of metal accumulation. Generation of a cemented layer therefore has significant environmental and economic implications. It is likely that, in sulfide-rich tailings impoundments, the addition of carbonate-rich buffering material during the late stages of tailings deposition would enhance the formation of hardpan layers.« less

Engineering the Mechanical Properties of Ultrabarrier Films Grown by Atomic Layer Deposition for the Encapsulation of Printed Electronics

DOE PAGES

Bulusu, Anuradha; Singh, Ankit K.; Wang, Cheng-Yin; ...

2015-08-28

Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion (CTE) mismatch, elastic mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition.more » We present the impact of architecture on the performance of aluminum oxide (Al2O3)/hafnium oxide (HfO2) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50{degree sign}C/85% RH. Inserting a SiNx layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.« less

Growth of highly strained CeO 2 ultrathin films

DOE PAGES

Shi, Yezhou; Lee, Sang Chul; Monti, Matteo; ...

2016-11-07

Large biaxial strain is a promising route to tune the functionalities of oxide thin films. However, large strain is often not fully realized due to the formation of misfit dislocations at the film/substrate interface. In this work, we examine the growth of strained ceria (CeO 2) thin films on (001)-oriented single crystal yttria-stabilized zirconia (YSZ) via pulsed-laser deposition. By varying the film thickness systematically between 1 and 430 nm, we demonstrate that ultrathin ceria films are coherently strained to the YSZ substrate for thicknesses up to 2.7 nm, despite the large lattice mismatch (~5%). The coherency is confirmed by bothmore » X-ray diffraction and high-resolution transmission electron microscopy. This thickness is several times greater than the predicted equilibrium critical thickness. Partial strain relaxation is achieved by forming semirelaxed surface islands rather than by directly nucleating dislocations. In situ reflective high-energy electron diffraction during growth confirms the transition from 2-D (layer-by-layer) to 3-D (island) at a film thickness of ~1 nm, which is further supported by atomic force microscopy. We propose that dislocations likely nucleate near the surface islands and glide to the film/substrate interface, as evidenced by the presence of 60° dislocations. Finally, an improved understanding of growing oxide thin films with a large misfit lays the foundation to systematically explore the impact of strain and dislocations on properties such as ionic transport and redox chemistry.« less

Ion Diffusion-Directed Assembly Approach to Ultrafast Coating of Graphene Oxide Thick Multilayers.

PubMed

Zhao, Xiaoli; Gao, Weiwei; Yao, Weiquan; Jiang, Yanqiu; Xu, Zhen; Gao, Chao

2017-10-24

The layer-by-layer (LbL) assembly approach has been widely used to fabricate multilayer coatings on substrates with multiple cycles, whereas it is hard to access thick films efficiently. Here, we developed an ion diffusion-directed assembly (IDDA) strategy to rapidly make multilayer thick coatings in one step on arbitrary substrates. To achieve multifunctional coatings, graphene oxide (GO) and metallic ions were selected as the typical building blocks and diffusion director in IDDA, respectively. With diffusion of metallic ions from substrate to negatively charged GO dispersion spontaneously (i.e., from high-concentration region to low-concentration region), GO was assembled onto the substrate sheet-by-sheet via sol-gel transformation. Because metallic ions with size of subnanometers can diffuse directionally and freely in the aqueous dispersion, GO was coated on the substrate efficiently, giving rise to films with desired thickness up to 10 μm per cycle. The IDDA approach shows three main merits: (1) high efficiency with a μm-scale coating rate; (2) controllability over thickness and evenness; and (3) generality for substrates of plastics, metals and ceramics with any shapes and morphologies. With these merits, IDDA strategy was utilized in the efficient fabrication of functional graphene coatings that exhibit outstanding performance as supercapacitors, electromagnetic interference shielding textiles, and anticorrosion coatings. This IDDA approach can be extended to other building blocks including polymers and colloidal nanoparticles, promising for the scalable production and application of multifunctional coatings.

Synthesis of graphene oxide through different oxidation degrees for solar cells

NASA Astrophysics Data System (ADS)

Zhang, Xiaoshan; Wang, Huan; Huang, Tianjiao; Wen, Lingling; Zhou, Liya

2018-03-01

Graphene is known as an electro-chemical material and widely used in electro-chemical devices, especially in solar cell. Decreasing the thickness of the layer is a critical way to improve the electrochemical property of solar cells as far as possible. Among the various oxidation approaches, presented herein is a facile approach, which is easier, less cost and more effective, environmental benign with the greener processing and without any requirement for post purification, towards the synthesis of graphene oxide (GO) with different oxidation degrees by potassium ferrate (K2FeO4). A modified method using less amount of oxidizing agent is reported herein. It is the pretreatment of the synthesis of graphite, which maintains the thermal cycle of the system. This novel reports to compound GO with controlled oxidation degrees can not only increase the quantity of oxygen-containing functional groups on GO surface, increase space between graphene oxide layer and facilitate the dispersion of graphene in aqueous solution. Thus, the modified method shows prospect for large-scale production of graphene oxide and its novel application, in addition to its derivative and market potential for solar cells.

Protective Effect of Highly Polymeric A-Type Proanthocyanidins from Seed Shells of Japanese Horse Chestnut (Aesculus turbinata BLUME) against Light-Induced Oxidative Damage in Rat Retina

PubMed Central

Ishihara, Tomoe; Kaidzu, Sachiko; Kimura, Hideto; Koyama, Yasurou; Matsuoka, Yotaro

2018-01-01

Retinal tissue is exposed to oxidative stress caused by visible light. Light-damaged rat used in age-related macular degeneration (AMD) studies clarified that antioxidants decrease retinal light damage. Albino rats were exposed to 5000 Lux light for 12 h with oral administration of the polyphenolic compounds fraction (PF) from the seed shells of Japanese horse chestnut (30 mg/kg, 100 mg/kg, and 300 mg/kg body weight: BW). To evaluate the protective effects against light damage, electroretinograms (ERGs), the outer nuclear layer (ONL) thickness, the antioxidant activity of plasma, oxidized retinal lipids, and the detection of apoptosis were examined. To reveal their active compounds, PF were separated into an A-type proanthocyanidin (PAF) and a flavonol O-glycosides fraction. The protective effects of these fractions against light damage were compared by measuring the thickness of the ERGs and ONL. Compared with the negative control, the PF group (100 mg/kg and 300 mg/kg BW) significantly suppressed the decrease of the ERG amplitudes and ONL thickness. PF (300 mg/kg BW) induced the elevation of in vivo antioxidant activity, and the suppression of retinal lipid oxidation. PF administration also suppressed apoptotic cell death. The protective effects against light damage were attributable to the antioxidant activity of PAF. The light-induced damage of retinas was protected by oral administration of PF and PAF. Taken together, these compounds are potentially useful for the prevention of the disease caused by light exposure. Highlights: The protective effects of retinal damage by light exposure were evaluated using polyphenolic compounds from the seed shells of Japanese horse chestnut (Aesculus turbinata BLUME) as an antioxidant. Decreases in the electroretinographic amplitude and outer nuclear layer thickness were suppressed by the polyphenolic compounds of the seed shells. Polyphenolic compounds from the seed shells of Japanese horse chestnut inhibited the oxidation of retinal lipids. Highly polymeric A-type proanthocyanidin from the seed shells protected the rat retina from light exposure damage by inhibiting oxidative stress and apoptotic mechanisms. PMID:29748512

Protective Effect of Highly Polymeric A-Type Proanthocyanidins from Seed Shells of Japanese Horse Chestnut (Aesculus turbinata BLUME) against Light-Induced Oxidative Damage in Rat Retina.

PubMed

Ishihara, Tomoe; Kaidzu, Sachiko; Kimura, Hideto; Koyama, Yasurou; Matsuoka, Yotaro; Ohira, Akihiro

2018-05-10

Retinal tissue is exposed to oxidative stress caused by visible light. Light-damaged rat used in age-related macular degeneration (AMD) studies clarified that antioxidants decrease retinal light damage. Albino rats were exposed to 5000 Lux light for 12 h with oral administration of the polyphenolic compounds fraction (PF) from the seed shells of Japanese horse chestnut (30 mg/kg, 100 mg/kg, and 300 mg/kg body weight: BW). To evaluate the protective effects against light damage, electroretinograms (ERGs), the outer nuclear layer (ONL) thickness, the antioxidant activity of plasma, oxidized retinal lipids, and the detection of apoptosis were examined. To reveal their active compounds, PF were separated into an A-type proanthocyanidin (PAF) and a flavonol O -glycosides fraction. The protective effects of these fractions against light damage were compared by measuring the thickness of the ERGs and ONL. Compared with the negative control, the PF group (100 mg/kg and 300 mg/kg BW) significantly suppressed the decrease of the ERG amplitudes and ONL thickness. PF (300 mg/kg BW) induced the elevation of in vivo antioxidant activity, and the suppression of retinal lipid oxidation. PF administration also suppressed apoptotic cell death. The protective effects against light damage were attributable to the antioxidant activity of PAF. The light-induced damage of retinas was protected by oral administration of PF and PAF. Taken together, these compounds are potentially useful for the prevention of the disease caused by light exposure. The protective effects of retinal damage by light exposure were evaluated using polyphenolic compounds from the seed shells of Japanese horse chestnut ( Aesculus turbinata BLUME) as an antioxidant. Decreases in the electroretinographic amplitude and outer nuclear layer thickness were suppressed by the polyphenolic compounds of the seed shells. Polyphenolic compounds from the seed shells of Japanese horse chestnut inhibited the oxidation of retinal lipids. Highly polymeric A-type proanthocyanidin from the seed shells protected the rat retina from light exposure damage by inhibiting oxidative stress and apoptotic mechanisms.

The influence of nano-oxide layer on magnetostriction of sensing layer in bottom spin valves

NASA Astrophysics Data System (ADS)

Qiu, J. J.; Han, G. C.; Li, K. B.; Liu, Z. Y.; Zong, B. Y.; Wu, Y. H.

2006-05-01

The magnetostriction coefficient (λs) of ultrathin sputtered polycrystalline as-deposited and annealed Ta/Ni81Fe19(t)/Ta films was studied as a function of the thickness. λs and magnetoresistance (MR) of bottom-type spin valves (SVs) with nano-oxide layer (NOL) added in the pinned layer were investigated by using NiFe, Co90Fe10, and CoFe/NiFe/CoFe layers as free layer (FL), respectively. λs of SV with NOL increased slightly except that of CoFe FL. NOLs were added at different positions to study the effects of NOL on λs of CoFe FL. All λs of CoFe FL change from negative to positive and its absolute value also increases significantly with CoFeOx related NOL added below. Our λs and surface roughness results indicated that the structure of the film not the roughness dominates λs of ultrathin FL in SVs.

Digital modulation of the nickel valence state in a cuprate-nickelate heterostructure

NASA Astrophysics Data System (ADS)

Wrobel, F.; Geisler, B.; Wang, Y.; Christiani, G.; Logvenov, G.; Bluschke, M.; Schierle, E.; van Aken, P. A.; Keimer, B.; Pentcheva, R.; Benckiser, E.

2018-03-01

Layer-by-layer oxide molecular-beam epitaxy has been used to synthesize cuprate-nickelate multilayer structures of composition (La2CuO4)m/LaO /(LaNiO3)n . In a combined experimental and theoretical study, we show that these structures allow a clean separation of dopant and doped layers. Specifically, the LaO layer separating cuprate and nickelate blocks provides an additional charge that, according to density-functional theory calculations, is predominantly accommodated in the interfacial nickelate layers. This is reflected in an elongation of bond distances and changes in valence state, as observed by scanning transmission electron microscopy and x-ray absorption spectroscopy. Moreover, the predicted charge disproportionation in the nickelate interface layers leads to a metal-to-insulator transition when the thickness is reduced to n =2 , as observed in electrical transport measurements. The results exemplify the perspectives of charge transfer in metal-oxide multilayers to induce doping without introducing chemical and structural disorder.

Two-dimensional gold nanostructures with high activity for selective oxidation of carbon–hydrogen bonds

PubMed Central

Wang, Liang; Zhu, Yihan; Wang, Jian-Qiang; Liu, Fudong; Huang, Jianfeng; Meng, Xiangju; Basset, Jean-Marie; Han, Yu; Xiao, Feng-Shou

2015-01-01

Efficient synthesis of stable two-dimensional (2D) noble metal catalysts is a challenging topic. Here we report the facile synthesis of 2D gold nanosheets via a wet chemistry method, by using layered double hydroxide as the template. Detailed characterization with electron microscopy and X-ray photoelectron spectroscopy demonstrates that the nanosheets are negatively charged and [001] oriented with thicknesses varying from single to a few atomic layers. X-ray absorption spectroscopy reveals unusually low gold–gold coordination numbers. These gold nanosheets exhibit high catalytic activity and stability in the solvent-free selective oxidation of carbon–hydrogen bonds with molecular oxygen. PMID:25902034

Vapor deposition and condensate flow on combustion turbine blades - Theoretical model to predict/understand some corrosion rate consequences of molten alkali sulfate deposition in the field or laboratory

NASA Technical Reports Server (NTRS)

Rosner, Daniel E.; Nagarajan, R.

1987-01-01

An analysis is undertaken of aerodynamically- and centrifugally-driven liquid condensate layers on nonisothermal combustion turbines' stator vanes and rotor blades. Attention is given to the quantitative consequences of one possible mechanism for the initiation of 'hot corrosion' in the underlying blade material through a 'fluxing' of the protective oxide coating by the molten salt of the Newtonian condensate film. Illustrative calculations are presented for the condensate streamline pattern and the distributions of the steady-state condensate layer thickness, together with the corresponding oxide dissolution rate, for a test turbine blade.

Two-dimensional gold nanostructures with high activity for selective oxidation of carbon-hydrogen bonds.

PubMed

Wang, Liang; Zhu, Yihan; Wang, Jian-Qiang; Liu, Fudong; Huang, Jianfeng; Meng, Xiangju; Basset, Jean-Marie; Han, Yu; Xiao, Feng-Shou

2015-04-22

Efficient synthesis of stable two-dimensional (2D) noble metal catalysts is a challenging topic. Here we report the facile synthesis of 2D gold nanosheets via a wet chemistry method, by using layered double hydroxide as the template. Detailed characterization with electron microscopy and X-ray photoelectron spectroscopy demonstrates that the nanosheets are negatively charged and [001] oriented with thicknesses varying from single to a few atomic layers. X-ray absorption spectroscopy reveals unusually low gold-gold coordination numbers. These gold nanosheets exhibit high catalytic activity and stability in the solvent-free selective oxidation of carbon-hydrogen bonds with molecular oxygen.

Two-dimensional gold nanostructures with high activity for selective oxidation of carbon-hydrogen bonds

NASA Astrophysics Data System (ADS)

Wang, Liang; Zhu, Yihan; Wang, Jian-Qiang; Liu, Fudong; Huang, Jianfeng; Meng, Xiangju; Basset, Jean-Marie; Han, Yu; Xiao, Feng-Shou

2015-04-01

Efficient synthesis of stable two-dimensional (2D) noble metal catalysts is a challenging topic. Here we report the facile synthesis of 2D gold nanosheets via a wet chemistry method, by using layered double hydroxide as the template. Detailed characterization with electron microscopy and X-ray photoelectron spectroscopy demonstrates that the nanosheets are negatively charged and [001] oriented with thicknesses varying from single to a few atomic layers. X-ray absorption spectroscopy reveals unusually low gold-gold coordination numbers. These gold nanosheets exhibit high catalytic activity and stability in the solvent-free selective oxidation of carbon-hydrogen bonds with molecular oxygen.

Decarburizing Annealing of Technical Alloy Fe - 3% Si

NASA Astrophysics Data System (ADS)

Lobanov, M. L.; Gomzikov, A. I.; Akulov, S. V.; Pyatygin, A. I.

2005-09-01

Results of a study illustrating the effect of temperature and moisture content in the atmosphere (5% H2 + 95% N2) on the removal of carbon and oxidation of the surface layer of technical alloy Fe - 3% Si (electrical anisotropic steel of the nitride-copper production variant) are presented. Variation of the concentration of silicon over the thickness of the surface layer is studied. The types of phases forming on the surface and their influence on the occurrence of the processes are determined. Annealing parameters (temperature and moisture content of the atmosphere) at which the processes of decarburization and oxidation are decelerated and even stopped are established.

Formation of nitrile species on Ag nanostructures supported on a-Al2O3: a new corrosion route for silver exposed to the atmosphere.

PubMed

Peláez, R J; Espinós, J P; Afonso, C N

2017-04-28

The aging of supported Ag nanostructures upon storage in ambient conditions (air and room temperature) for 20 months has been studied. The samples are produced on glass substrates by pulsed laser deposition (PLD); first a 15 nm thick buffer layer of amorphous aluminum oxide (a-Al 2 O 3 ) is deposited, followed by PLD of Ag. The amount of deposited Ag ranges from that leading to a discontinuous layer up to an almost-percolated layer with a thickness of <6 nm. Some regions of the as-grown silver layers are converted, by laser induced dewetting, into round isolated nanoparticles (NPs) with diameters of up to ∼25 nm. The plasmonic, structural and chemical properties of both as-grown and laser exposed regions upon aging have been followed using extinction spectroscopy, scanning electron microscopy and x-ray photoelectron spectroscopy, respectively. The results show that the discontinuous as-grown regions are optically and chemically unstable and that the metal becomes oxidized faster, the smaller the amount of Ag. The corrosion leads to the formation of nitrile species due to the reaction between NO x species from the atmosphere adsorbed at the surface of Ag, and hydrocarbons adsorbed in defects at the surface of the a-Al 2 O 3 layer during the deposition of the Ag nanostructures by PLD that migrate to the surface of the metal with time. The nitrile formation thus results in the main oxidation mechanism and inhibits almost completely the formation of sulphate/sulphide. Finally, the optical changes upon aging offer an easy-to-use tool for following the aging process. They are dominated by an enhanced absorption in the UV side of the spectrum and a blue-shift of the surface plasmon resonance that are, respectively, related to the formation of a dielectric overlayer on the Ag nanostructure and changes in the dimensions/features of the nanostructures, both due to the oxidation process.

Effect of ring-shaped SiO2 current blocking layer thickness on the external quantum efficiency of high power light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Liu, Mengling; Hu, Hongpo; Gao, Yilin; Liu, Xingtong

2017-12-01

A ring-shaped SiO2 CBL underneath the p-electrode was employed to enhance current spreading of GaN-based light-emitting diodes (LEDs). Effects of ring-shaped SiO2 current blocking layer (CBL) thickness on optical and electrical characteristics of high power LEDs were investigated. A 190-nm-thick ring-shaped SiO2 CBL with inclined sidewalls was obtained using a combination of a thermally reflowed photoresist technique and an inductively coupled plasma (ICP) etching process, allowing for the deposition of conformal indium tin oxide (ITO) transparent conductive layer on sidewalls of ring-shaped SiO2 CBL. It was indicated that the external quantum efficiency (EQE) of high power LEDs increased with increasing thickness of ring-shaped SiO2 CBL. The EQE of high power LED with 190-nm-thick ring-shaped SiO2 CBL was 12.7% higher than that of high power LED without SiO2 CBL. Simulations performed with commercial SimuLED software package showed that the ring-shaped SiO2 CBL could significantly alleviate current crowding around p-electrode, resulting in enhanced current spreading over the entire high power LED structure.

Molecular dynamics simulation study of nanoscale passive oxide growth on Ni-Al alloy surfaces at low temperatures

NASA Astrophysics Data System (ADS)

Sankaranarayanan, Subramanian K. R. S.; Ramanathan, Shriram

2008-08-01

Oxidation kinetics of Ni-Al (100) alloy surface is investigated at low temperatures (300-600 K) and at different gas pressures using molecular dynamics (MD) simulations with dynamic charge transfer between atoms. Monte Carlo simulations employing the bond order simulation model are used to generate the surface segregated minimum energy initial alloy configurations for use in the MD simulations. In the simulated temperature-pressure-composition regime for Ni-Al alloys, we find that the oxide growth curves follow a logarithmic law beyond an initial transient regime. The oxidation rates for Ni-Al alloys were found to decrease with increasing Ni composition. Structure and dynamical correlations in the metal/oxide/gas environments are used to gain insights into the evolution and morphology of the growing oxide film. Oxidation of Ni-Al alloys is characterized by the absence of Ni-O bond formation. Oxide films formed on the various simulated metal surfaces are amorphous in nature and have a limiting thickness ranging from ˜1.7nm for pure Al to 1.1 nm for 15% Ni-Al surfaces. Oxide scale analysis indicates significant charge transfer as well as variation in the morphology and structure of the oxide film formed on pure Al and 5% Ni-Al alloy. For oxide scales thicker than 1 nm, the oxide structure in case of pure Al exhibits a mixed tetrahedral (AlO4˜37%) and octahedral (AlO6˜19%) environment, whereas the oxide scale on Ni-Al alloy surface is almost entirely composed of tetrahedral environment (AlO4˜60%) with very little AlO6 (<1%) . The oxide growth kinetic curves are fitted to Arrhenius-type plots to get an estimate of the activation energy barriers for metal oxidation. The activation energy barrier for oxidation on pure Al was found to be 0.3 eV lower than that on 5% Ni-Al surface. Atomistic observations as well as calculated dynamical correlation functions indicate a layer by layer growth on pure Al, whereas a transition from an initial island growth mode (<75ps) to a layer by layer mode (>100ps) occurs in case of 5% Ni-Al alloy. The oxide growth on both pure Al and Ni-Al alloy surfaces occurs by inward anion and outward cation diffusions. The cation diffusion in both the cases is similar, whereas the anion diffusion in case of 5% Ni-Al is 25% lower than pure Al, thereby resulting in reduced self-limiting thickness of oxide scale on the alloy surface. The simulation findings agree well with previously reported experimental observations of oxidation on Ni-Al alloy surface.

Research into the feasibility of metal- and oxide-film capacitors

NASA Technical Reports Server (NTRS)

Jorgenson, G. V.; Larson, H. W.

1973-01-01

Thin film capacitors with up to twenty-two active layers have been deposited by RF sputtering. The materials were aluminum electrodes of 1200 to 1500 angstrom thickness and silica dielectric layers of 3000 to 6000 angstrom thickness. The best electrical characteristics were capacitances of nearly 0.1 microfarad for an active area of 1.25 square centimeters, dissipation factor of less than 0.01 over a frequency range of 0.5 to 100 kilohertz and energy density of approximately 70 millijoules per cubic centimeter of active deposited material at a working voltage of 40 volts. These aluminum-silica capacitors exhibit excellent electrical stability over a temperature range from -55 C to +300 C.

Electrical characterization of thin nanoscale SiOx layers grown on plasma hydrogenated silicon

NASA Astrophysics Data System (ADS)

Halova, E.; Kojuharova, N.; Alexandrova, S.; Szekeres, A.

2018-03-01

We analyzed the electrical characteristics of MOS structures with a SiOx layer grown on Si treated in plasma without heating. The hysteresis effect observed indicates the presence of traps spatially distributed into the oxide near the interface. The shift and the shape of the curves reveal a small oxide charge and low leakage currents, i.e. a high-quality dielectric layer. The generalized C-V curve was generated by applying the two-frequency methods on the C-V and G-V characteristics at frequencies in the range from 1 kHz to 300 kHz and by accounting for the series resistance and the leakage through the oxide layer. The energy spectra of the interface traps were calculated by comparing the experimental and the ideal theoretical C-V curves. The spectra showed the presence of interface traps with localized energy levels in the Si bandgap. These conclusions correlate well with the results on this oxide’s mechanical stress level, composition and Si-O ring structure, as well as on the interfacial region composition, obtained by our previous detailed multi-angle spectral ellipsometric studies. The ellipsometric data and the capacitance in strong accumulation of the C-V curves were used to calculate the thickness and the dielectric constants of the oxide layers.

Wet-chemical synthesis and applications of non-layer structured two-dimensional nanomaterials

PubMed Central

Tan, Chaoliang; Zhang, Hua

2015-01-01

Non-layer structured nanomaterials with single- or few-layer thickness have two-dimensional sheet-like structures and possess intriguing properties. Recent years have seen major advances in development of a host of non-layer structured ultrathin two-dimensional nanomaterials such as noble metals, metal oxides and metal chalcogenides. The wet-chemical synthesis has emerged as the most promising route towards high-yield and mass production of such nanomaterials. These nanomaterials are now finding increasing applications in a wide range of areas including catalysis, energy production and storage, sensor and nanotherapy, to name but a few. PMID:26303763

Oxidation behavior and electrical property of ferritic stainless steel interconnects with a Cr-La alloying layer by high-energy micro-arc alloying process

NASA Astrophysics Data System (ADS)

Feng, Z. J.; Zeng, C. L.

Chromium volatility, poisoning of the cathode material and rapidly decreasing electrical conductivity are the major problems associated with the application of ferritic stainless steel interconnects of solid oxide fuel cells operated at intermediate temperatures. Recently, a novel and simple high-energy micro-arc alloying (HEMAA) process is proposed to prepare LaCrO 3-based coatings for the type 430 stainless steel interconnects using a LaCrO 3-Ni rod as deposition electrode. In this work, a Cr-La alloying layer is firstly obtained on the alloy surface by HEMAA using Cr and La as deposition electrode, respectively, followed by oxidation treatment at 850 °C in air to form a thermally grown LaCrO 3 coating. With the formation of a protective scale composed of a thick LaCrO 3 outer layer incorporated with small amounts of Cr-rich oxides and a thin Cr 2O 3-rich sub-layer, the oxidation rate of the coated steel is reduced remarkably. A low and stable electrical contact resistance is achieved with the application of LaCrO 3-based coatings, with a value less than 40 mΩ cm 2 during exposure at 850 °C in air for up to 500 h.

Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity

NASA Astrophysics Data System (ADS)

Mizuno, Tomohisa; Omata, Yuhsuke; Kanazawa, Rikito; Iguchi, Yusuke; Nakada, Shinji; Aoki, Takashi; Sasaki, Tomokazu

2018-04-01

We experimentally studied the optimization of the hot-C+-ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-on-insulator substrate at various hot-C+-ion implantation temperatures and C+ ion doses to improve photoluminescence (PL) intensity for future Si-based photonic devices. We successfully optimized the process by hot-C+-ion implantation at a temperature of about 700 °C and a C+ ion dose of approximately 4 × 1016 cm-2 to realize a high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas.

The role of crystallographic texture in achieving low friction zinc oxide nanolaminate films

NASA Astrophysics Data System (ADS)

Mojekwu, Nneoma

Metal oxide nanolaminate films are potential high temperature solid lubricants due to their ability to exhibit significant plasticity when grain size is reduced to the nanometer scale, and defective growth structure is achieved by condensation of oxygen vacancies to form intrinsic stacking faults. This is in contrast to conventional microcrystalline and single crystal oxides that exhibit brittle fracture during loading in a sliding contact. This study emphasizes the additional effect of growth orientation, in particular crystallographic texture, on determining the sliding friction behavior in nanocolumnar grain zinc oxide films grown by atomic layer deposition. It was determined that zinc oxide low (0002) versus higher (101¯3) surface energy crystallographic planes influenced the sliding friction coefficient. Texturing of the (0002) grains resulted in a decreased adhesive component of friction thereby lowering the sliding friction coefficient to ˜0.25, while the friction coefficient doubled to ˜0.5 with increasing contribution of surface (101¯3) grains. In addition, the variation of the x-ray grazing incident angle from 0.5° to 5° was studied to better understand the surface grain orientation as a function of ZnO layer thickness in one versus four bilayer nanolaminates where the under layer (seed layer) was load-bearing Zn(Ti,Zr)O3.

Layer-by-layer grown scalable redox-active ruthenium-based molecular multilayer thin films for electrochemical applications and beyond.

PubMed

Kaliginedi, Veerabhadrarao; Ozawa, Hiroaki; Kuzume, Akiyoshi; Maharajan, Sivarajakumar; Pobelov, Ilya V; Kwon, Nam Hee; Mohos, Miklos; Broekmann, Peter; Fromm, Katharina M; Haga, Masa-aki; Wandlowski, Thomas

2015-11-14

Here we report the first study on the electrochemical energy storage application of a surface-immobilized ruthenium complex multilayer thin film with anion storage capability. We employed a novel dinuclear ruthenium complex with tetrapodal anchoring groups to build well-ordered redox-active multilayer coatings on an indium tin oxide (ITO) surface using a layer-by-layer self-assembly process. Cyclic voltammetry (CV), UV-Visible (UV-Vis) and Raman spectroscopy showed a linear increase of peak current, absorbance and Raman intensities, respectively with the number of layers. These results indicate the formation of well-ordered multilayers of the ruthenium complex on ITO, which is further supported by the X-ray photoelectron spectroscopy analysis. The thickness of the layers can be controlled with nanometer precision. In particular, the thickest layer studied (65 molecular layers and approx. 120 nm thick) demonstrated fast electrochemical oxidation/reduction, indicating a very low attenuation of the charge transfer within the multilayer. In situ-UV-Vis and resonance Raman spectroscopy results demonstrated the reversible electrochromic/redox behavior of the ruthenium complex multilayered films on ITO with respect to the electrode potential, which is an ideal prerequisite for e.g. smart electrochemical energy storage applications. Galvanostatic charge-discharge experiments demonstrated a pseudocapacitor behavior of the multilayer film with a good specific capacitance of 92.2 F g(-1) at a current density of 10 μA cm(-2) and an excellent cycling stability. As demonstrated in our prototypical experiments, the fine control of physicochemical properties at nanometer scale, relatively good stability of layers under ambient conditions makes the multilayer coatings of this type an excellent material for e.g. electrochemical energy storage, as interlayers in inverted bulk heterojunction solar cell applications and as functional components in molecular electronics applications.

REACTIONS OF BERYLLIUM IN OXIDIZING ENVIRONMENTS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Snyder, P.E.; Boes, D.J.

1964-05-01

To evaluate the potential health hazard of beryllium under certain circumstances, a study was made of the interaction of metallic beryllium with oxidizing environments. This study consisted of two parts. Beryllium was subjected to the action of hydrocarbon/hydrogen/oxygen flames at temperatures below and above the melting point. A determination was made of the amount of contamination by the oxide of the downstream flue gases. The experiments indicated that the oxidation rates and the contamination are relatively low below the melting point of beryllium (1283 deg C). Above this temperature, however, it was found that the molten metal burned rapidly whenmore » unprotected by an oxide layer. This caused a sharp increase in both rate of oxidation and in downstream contamination. The behavior of beryllium when surrounded by water substance was investigated. The experimental work was divided into two phases involving reaction in liquid water and in steam. In general, it was found that the oxide layer formed was at first tightly adherent and later became thick and porous. The time between these two conditions depended on temperature, decreasing sharply as the melting point was approached. Upon melting, the oxide layer tended to act as a crucible containing the liquid metal. Under suitable conditions, the liquid would break out of its cage and oxidize very rapidly. When this occurred, the surrounding steam was slightly contaminated with the oxide. (auth)« less

Surface treatment to form a dispersed Y2O3 layer on Zircaloy-4 tubes

NASA Astrophysics Data System (ADS)

Jung, Yang-Il; Kim, Hyun-Gil; Guim, Hwan-Uk; Lim, Yoon-Soo; Park, Jung-Hwan; Park, Dong-Jun; Yang, Jae-Ho

2018-01-01

Zircaloy-4 is a traditional zirconium-based alloy developed for application in nuclear fuel cladding tubes. The surfaces of Zircaloy-4 tubes were treated using a laser beam to increase their mechanical strength. Laser beam scanning of a tube coated with yttrium oxide (Y2O3) resulted in the formation of a dispersed oxide layer in the tube's surface region. Y2O3 particles penetrated the Zircaloy-4 during the laser treatment and were distributed uniformly in the surface region. The thickness of the dispersed oxide layer varied from 50 to 140 μm depending on the laser beam trajectory. The laser treatment also modified the texture of the tube. The preferred basal orientation along the normal to the tube surface disappeared, and a random structure appeared after laser processing. The most obvious result was an increase in the mechanical strength. The tensile strength of Zircaloy-4 increased by 10-20% with the formation of the dispersed oxide layer. The compressive yield stress also increased, by more than 15%. Brittle fracture was observed in the surface-treated samples during tensile and compressive deformation at room temperature; however, the fracture behavior was changed in ductile at elevated temperatures.

Effect of fabrication parameters on coating properties of tubular solid oxide fuel cell electrolyte prepared by vacuum slurry coating

NASA Astrophysics Data System (ADS)

Son, Hui-Jeong; Song, Rak-Hyun; Lim, Tak-Hyoung; Lee, Seung-Bok; Kim, Sung-Hyun; Shin, Dong-Ryul

The process of vacuum slurry coating for the fabrication of a dense and thin electrolyte film on a porous anode tube is investigated for application in solid oxide fuel cells. 8 mol% yttria stabilized zirconia is coated on an anode tube by vacuum slurry-coating process as a function of pre-sintering temperature of the anode tube, vacuum pressure, slurry concentration, number of coats, and immersion time. A dense electrolyte layer is formed on the anode tube after final sintering at 1400 °C. With decrease in the pre-sintering temperature of the anode tube, the grain size of the coated electrolyte layer increases and the number of surface pores in the coating layer decreases. This is attributed to a reduced difference in the respective shrinkage of the anode tube and the electrolyte layer. The thickness of the coated electrolyte layer increases with the content of solid powder in the slurry, the number of dip-coats, and the immersion time. Although vacuum pressure has no great influence on the electrolyte thickness, higher vacuum produces a denser coating layer, as confirmed by low gas permeability and a reduced number of defects in the coating layer. A single cell with the vacuum slurry coated electrolyte shows a good performance of 620 mW cm -2 (0.7 V) at 750 °C. These experimental results indicate that the vacuum slurry-coating process is an effective method to fabricate a dense thin film on a porous anode support.

The electrical resistance of gold-capped chromium thin films

NASA Astrophysics Data System (ADS)

Ohashi, Masashi; Sawabu, Masaki; Ohashi, Kohei; Miyagawa, Masahiro; Maeta, Kae; Kubota, Takahide; Takanashi, Koki

2018-03-01

We studied the electrical resistance of polycrystalline chromium films capped by a gold layer. No anomaly was detected by resistance measurements of 10 nm thick film around room temperature, indicating that the antiferromagnetic interaction may be suppressed as decreasing the thickness of the chromium film. The sheet resistance Rs (T) curves differ from polycrystalline chromium films in previous studies because of the electrical current flows through a gold capping layer. On the other hand, the resistance drop is observed at T C = 1.15±0.05 K as that of polycrystalline chromium films in the previous report. It means that such resistance drop is not related to the chromium oxide layer on a polycrystalline chromium films. However, it is difficult to conclude that superconducting transition occurs because of the large residual resistance below the temperature where the resistance drop is observed.

New release cell for NMR microimaging of tablets. Swelling and erosion of poly(ethylene oxide).

PubMed

Abrahmsén-Alami, Susanna; Körner, Anna; Nilsson, Ingvar; Larsson, Anette

2007-09-05

A small release cell, in the form of a rotating disc, has been constructed to fit into the MRI equipment. The present work show that both qualitative and quantitative information of the swelling and erosion behavior of hydrophilic extended release (ER) matrix tablets may be obtained using this release cell and non-invasive magnetic resonance imaging (MRI) studies at different time-points during matrix dissolution. The tablet size, core size and the gel layer thickness of ER matrix formulations based on poly(ethylene oxide) have been determined. The dimensional changes as a function of time were found to correspond well to observations made with texture analysis (TA) methodology. Most importantly, the results of the present study show that both the erosion (displacement of the gel-dissolution media interface) and the swelling (decrease of dry tablet core size) proceed with a faster rate in radial than in axial direction using the rotating disk set-up. This behavior was attributed to the higher shear forces experienced in the radial direction. The results also indicate that front synchronization (constant gel layer thickness) is associated with the formation of an almost constant polymer concentration profile through the gel layer at different time-points.

Buried oxide and defects in oxygen implanted Si monitored by positron annihilation

NASA Astrophysics Data System (ADS)

Kruseman, A. C.; van Veen, A.; Schut, H.; Mijnarends, P. E.; Fujinami, M.

2001-08-01

One- and two-detector Doppler broadening measurements performed on low (˜1014 to 1015O+/cm2) and high dose (˜1017 to 1018O+/cm2) oxygen-irradiated Si using variable-energy slow positrons are analyzed in terms of S and W parameters. After annealing the low-dose samples at 800 °C, large VxOy complexes are formed at depths around 400 nm. These complexes produce a clear-cut signature when the ratio of S to that of defect-free bulk Si is plotted. Similar behavior is found for samples irradiated with 2 and 4×1017O+/cm2 and annealed at 1000 °C. After irradiation with 1.7×1018O+/cm2 and anneal at 1350 °C a 170 nm thick almost-bulk-quality Si surface layer is formed on top of a 430 nm thick buried oxide layer. This method of preparation is called separation by implantation of oxygen. S-W measurements show that the surface layer contains electrically inactive VxOy complexes not seen by electron microscopy. A method is presented to decompose the Doppler broadening line shape into contributions of the bulk, surface, and defect.

Bandgap- and local field-dependent photoactivity of Ag/black phosphorus nanohybrids

DOE PAGES

Lei, Wanying; Zhang, Tingting; Liu, Ping; ...

2016-10-18

Black phosphorus (BP) is the most exciting post-graphene layered nanomaterial that serendipitously bridges the 2D materials gap between semimetallic graphene and large bandgap transition-metal dichalcogenides in terms of high charge-carrier mobility and tunable direct bandgap, yet research into BP-based solar to chemical energy conversion is still in its infancy. Herein, a novel hybrid photocatalyst with Ag nanoparticles supported on BP nanosheets is prepared using a chemical reduction approach. Spin-polarized density functional theory (DFT) calculations show that Ag nanoparticles are stabilized on BP by covalent bonds at the Ag/BP interface and Ag–Ag interactions. In the visible-light photocatalysis of rhodamine B bymore » Ag/BP plasmonic nanohybrids, a significant rise in photoactivity compared with pristine BP nanosheets is observed either by decreasing BP layer thickness or increasing Ag particle size, with the greatest enhancement being up to ~20-fold. By virtue of finite-difference time domain (FDTD) simulations and photocurrent measurements, we give insights into the enhanced photocatalytic performance of Ag/BP nanohybrids, including the effects of BP layer thickness and Ag particle size. In comparison with BP, Ag/BP nanohybrids present intense local field amplification at the perimeter of Ag NPs, which is increased by either decreasing the BP layer thickness from multiple to few layers or increasing the Ag particle size from 20 to 40 nm. Additionally, when the BP layer thickness is decreased from multiple to few layers, the bandgap becomes favorable to generate more strongly oxidative holes in the proximity of the Ag/BP interface to enhance photoactivity. Our findings illustrate a synergy between locally enhanced electric fields and BP bandgap, in which BP layer thickness and Ag particle size can be independently tuned to enhance photoactivity. Lastly, this study may open a new avenue for further exploiting BP-based plasmonic nanostructures in photocatalysis, photodetectors, and photovoltaics.« less

Bandgap- and local field-dependent photoactivity of Ag/black phosphorus nanohybrids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lei, Wanying; Zhang, Tingting; Liu, Ping

Black phosphorus (BP) is the most exciting post-graphene layered nanomaterial that serendipitously bridges the 2D materials gap between semimetallic graphene and large bandgap transition-metal dichalcogenides in terms of high charge-carrier mobility and tunable direct bandgap, yet research into BP-based solar to chemical energy conversion is still in its infancy. Herein, a novel hybrid photocatalyst with Ag nanoparticles supported on BP nanosheets is prepared using a chemical reduction approach. Spin-polarized density functional theory (DFT) calculations show that Ag nanoparticles are stabilized on BP by covalent bonds at the Ag/BP interface and Ag–Ag interactions. In the visible-light photocatalysis of rhodamine B bymore » Ag/BP plasmonic nanohybrids, a significant rise in photoactivity compared with pristine BP nanosheets is observed either by decreasing BP layer thickness or increasing Ag particle size, with the greatest enhancement being up to ~20-fold. By virtue of finite-difference time domain (FDTD) simulations and photocurrent measurements, we give insights into the enhanced photocatalytic performance of Ag/BP nanohybrids, including the effects of BP layer thickness and Ag particle size. In comparison with BP, Ag/BP nanohybrids present intense local field amplification at the perimeter of Ag NPs, which is increased by either decreasing the BP layer thickness from multiple to few layers or increasing the Ag particle size from 20 to 40 nm. Additionally, when the BP layer thickness is decreased from multiple to few layers, the bandgap becomes favorable to generate more strongly oxidative holes in the proximity of the Ag/BP interface to enhance photoactivity. Our findings illustrate a synergy between locally enhanced electric fields and BP bandgap, in which BP layer thickness and Ag particle size can be independently tuned to enhance photoactivity. Lastly, this study may open a new avenue for further exploiting BP-based plasmonic nanostructures in photocatalysis, photodetectors, and photovoltaics.« less

High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

NASA Astrophysics Data System (ADS)

Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

2018-03-01

Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

Atomically Thin Femtojoule Memristive Device

DOE PAGES

Zhao, Huan; Dong, Zhipeng; Tian, He; ...

2017-10-25

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical toward reducing the operating current, voltage, and energy consumption in filamentary-type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on-state current and the switching voltage. In this paper, the formation of conductive filaments in a material medium with sub-nanometer thickness formed through the oxidation of atomically thin two-dimensionalmore » boron nitride is studied. The resulting memristive device exhibits sub-nanometer filamentary switching with sub-pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, current switching characteristics are observed that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. Finally, these ultralow energy devices are promising for realizing femtojoule and sub-femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultralow power operation.« less

Characterization and corrosion behavior of F6NM stainless steel treated in high temperature water

NASA Astrophysics Data System (ADS)

Li, Zheng-yang; Cai, Zhen-bing; Yang, Wen-jin; Shen, Xiao-yao; Xue, Guo-hong; Zhu, Min-hao

2018-03-01

F6NM martensitic stainless steel was exposed to 350 °C water condition for 500, 1500, and 2500 h to simulate pressurized water reactor (PWR) condition. The characterization and corrosion behavior of the oxide film were investigated. Results indicate that the exposed steel surface formed a double-layer oxide film. The outer oxide film is Fe-rich and contains two type oxide particles. However, the inner oxide film is Cr-rich, and two oxide films, whose thicknesses increase with increasing exposure time. The oxide film reduces the corrosion behavior because the outer oxide film has many crack and pores. Finally, the mechanism and factors affecting the formation of the oxide film were investigated.

Interference Thin Films for Spectral Filtering, Polarizing, Phase Retarding, and Intensity Splitting of FUV Radiation.

NASA Astrophysics Data System (ADS)

Kim, Jongmin

The development of thin film technology for the far ultraviolet (FUV: 120~220 nm) has not progressed as rapidly as in the visible and infrared regions because substrate and thin film materials exhibit absorption characteristics that complicate the design process. Mathematically, these absorbing materials can be treated in the same manner as non-absorbing materials if a complex representation of the optical constants is used. Realization of higher throughput can be achieved by operating in a reflective rather than a transmissive mode. The spectral filter II -stack design method obtains a high reflectance by minimizing absorptance in the high refractive index layer while maintaining the constructive interference between reflected waves at the boundary of HL pairs. Reflective polarizers are designed by inducing transmission and absorption of the p-polarized light. Utilizing a MgF_2/Al/MgF _2 three layer structure on a thick Al layer as a substrate, high s-polarization reflectance (>88%) and a high degree of polarization (>99%) are obtained. Out-of-band rejection in the spectral filter and the degree of polarization in the polarizer are significantly improved by combining multiple reflectors in tandem. The high-low absorbing material boundaries in the MgF_2/Al/MgF_2 structure are also useful for obtaining phase retardance between s and p-polarized reflected fields. Two equations established by the ideal quarterwave retarder (QWR) requirement and electric field relations are used to determine the MgF_2 layer thicknesses to achieve excellent QWR performances. Calculated results show that a high reflectance for both polarizations (>80%) and almost 90^circ of phase retardance are possible. Discrepancies between the designed and measured polarizer performance are mainly caused by Al layer oxidation during fabrication in a conventional high vacuum chamber. XPS depth profiling is used to analyze the oxidation and the results show that oxidized layer thicknesses are greater than typically reported from optical techniques. A method is established to predict the maximum oxygen concentration at each Al interface based only on the pressure to rate ratio during film deposition. Along with polarizers and retarders, beam-splitters are also difficult to make due to absorption; and transparent conductive coatings have not been studied in the FUV region. A beam-splitter with improved TR product (transmittance times reflectance: TR = 0.20, 0.18) is designed with a dielectric multilayer. It is found that Cr is a significantly better film material for transparent conductive coatings than indium-tin-oxide (ITO) in the FUV region.

Metal/Dielectric Multilayers for High Resolution Imaging

DTIC Science & Technology

2012-08-07

of a silicon waveguide coated by thin metal film. The proposed PWG structure consists of narrow silicon waveguide clad by gold film without top...where the waveguide thickness is 220nm and the lower oxide cladding is 2μm. The device consists of main waveguide (of waveguide width WSOI=450nm...evaporation, where 3nm thick titanium was used as adhesion layer before 40nm gold deposition took place. Finally, the samples were spun coated with

Tuning dipolar magnetic interactions by controlling individual silica coating of iron oxide nanoparticles

NASA Astrophysics Data System (ADS)

Rivas Rojas, P. C.; Tancredi, P.; Moscoso Londoño, O.; Knobel, M.; Socolovsky, L. M.

2018-04-01

Single and fixed size core, core-shell nanoparticles of iron oxides coated with a silica layer of tunable thickness were prepared by chemical routes, aiming to generate a frame of study of magnetic nanoparticles with controlled dipolar interactions. The batch of iron oxides nanoparticles of 4.5 nm radii, were employed as cores for all the coated samples. The latter was obtained via thermal decomposition of organic precursors, resulting on nanoparticles covered with an organic layer that was subsequently used to promote the ligand exchange in the inverse microemulsion process, employed to coat each nanoparticle with silica. The amount of precursor and times of reaction was varied to obtain different silica shell thicknesses, ranging from 0.5 nm to 19 nm. The formation of the desired structures was corroborated by TEM and SAXS measurements, the core single-phase spinel structure was confirmed by XRD, and superparamagnetic features with gradual change related to dipolar interaction effects were obtained by the study of the applied field and temperature dependence of the magnetization. To illustrate that dipolar interactions are consistently controlled, the main magnetic properties are presented and analyzed as a function of center to center minimum distance between the magnetic cores.

Spectral emissivity of candidate alloys for very high temperature reactors in high temperature air environment

NASA Astrophysics Data System (ADS)

Cao, G.; Weber, S. J.; Martin, S. O.; Sridharan, K.; Anderson, M. H.; Allen, T. R.

2013-10-01

Emissivity measurements for candidate alloys for very high temperature reactors were carried out in a custom-built experimental facility, capable of both efficient and reliable measurements of spectral emissivities of multiple samples at high temperatures. The alloys studied include 304 and 316 austenitic stainless steels, Alloy 617, and SA508 ferritic steel. The oxidation of alloys plays an important role in dictating emissivity values. The higher chromium content of 304 and 316 austenitic stainless steels, and Alloy 617 results in an oxide layer only of sub-micron thickness even at 700 °C and consequently the emissivity of these alloys remains low. In contrast, the low alloy SA508 ferritic steel which contains no chromium develops a thicker oxide layer, and consequently exhibits higher emissivity values.

Moisture barrier properties of single-layer graphene deposited on Cu films for Cu metallization

NASA Astrophysics Data System (ADS)

Gomasang, Ploybussara; Abe, Takumi; Kawahara, Kenji; Wasai, Yoko; Nabatova-Gabain, Nataliya; Thanh Cuong, Nguyen; Ago, Hiroki; Okada, Susumu; Ueno, Kazuyoshi

2018-04-01

The moisture barrier properties of large-grain single-layer graphene (SLG) deposited on a Cu(111)/sapphire substrate are demonstrated by comparing with the bare Cu(111) surface under an accelerated degradation test (ADT) at 85 °C and 85% relative humidity (RH) for various durations. The change in surface color and the formation of Cu oxide are investigated by optical microscopy (OM) and X-ray photoelectron spectroscopy (XPS), respectively. First-principle simulation is performed to understand the mechanisms underlying the barrier properties of SLG against O diffusion. The correlation between Cu oxide thickness and SLG quality are also analyzed by spectroscopic ellipsometry (SE) measured on a non-uniform SLG film. SLG with large grains shows high performance in preventing the Cu oxidation due to moisture during ADT.

Optical contrast for identifying the thickness of two-dimensional materials

NASA Astrophysics Data System (ADS)

Bing, Dan; Wang, Yingying; Bai, Jing; Du, Ruxia; Wu, Guoqing; Liu, Liyan

2018-01-01

One of the most intriguing properties of two-dimensional (2D) materials is their thickness dependent properties. A quick and precise technique to identify the layer number of 2D materials is therefore highly desirable. In this review, we will introduce the basic principle of using optical contrast to determine the thickness of 2D material and also its advantage as compared to other modern techniques. Different 2D materials, including graphene, graphene oxide, transitional metal dichalcogenides, black phosphorus, boron nitride, have been used as examples to demonstrate the capability of optical contrast methods. A simple and more efficient optical contrast image technique is also emphasized, which is suitable for quick and large-scale thickness identification. We have also discussed the factors that could affect the experimental results of optical contrast, including incident light angle, anisotropic nature of materials, and also the twisted angle between 2D layers. Finally, we give perspectives on future development of optical contrast methods for the study and application of 2D materials.

Physical properties of spin-valve films grown on naturally oxidized metal nano-oxide surfaces

NASA Astrophysics Data System (ADS)

Mao, Ming; Cerjan, Charlie; Kools, Jacques

2002-05-01

The physical properties of spin-valve films NiFe 25 Å/CoFe 10 Å/Cu(tCu)/CoFe 30 Å/IrMn 70 Å/Ta 20 Å with graded Cu layer thickness (tCu=18-45 Å) grown on the surface of metal nano-oxide layers (NOLs) were studied. The NOLs were formed from ultrathin Al, Cr, Cu, Nb, Ta, CoFe, NiFe, and NiFeCr layers by natural oxidation. The growth of the spin-valve films on NOLs has led to an enhancement in giant magnetoresistance value by up to 48%. A corresponding reduction in minimum film resistance by over 10% confirms that this enhancement originates from an increase in the mean free path of spin-polarized electrons due to the resultant specular reflection at the nano-oxide surfaces. A wide spectrum of oscillatory interlayer exchange coupling dependence on tCu for these NOL-bearing films suggests that a specular nano-oxide surface does not necessarily result in a smoother multilayer structure. The observation of an enhanced exchange biasing among these spin-valve films appears in contradiction to the observed deterioration of their crystallographic quality. As an important application, TaOx, CrOx, and NbOx could be employed as an alternative to AlOx as the barrier layer for magnetic tunnel junctions.

Laminar iridium coating produced by pulse current electrodeposition from chloride molten salt

NASA Astrophysics Data System (ADS)

Zhu, Li'an; Bai, Shuxin; Zhang, Hong; Ye, Yicong

2013-10-01

Due to the unique physical and chemical properties, Iridium (Ir) is one of the most promising oxidation-resistant coatings for refractory materials above 1800 °C in aerospace field. However, the Ir coatings prepared by traditional methods are composed of columnar grains throughout the coating thickness. The columnar structure of the coating is considered to do harm to its oxidation resistance. The laminar Ir coating is expected to have a better high-temperature oxidation resistance than the columnar Ir coating does. The pulse current electrodeposition, with three independent parameters: average current density (Jm), duty cycle (R) and pulse frequency (f), is considered to be a promising method to fabricate layered Ir coating. In this study, laminar Ir coatings were prepared by pulse current electrodeposition in chloride molten salt. The morphology, roughness and texture of the coatings were determined by scanning electron microscope (SEM), profilometer and X-ray diffraction (XRD), respectively. The results showed that the laminar Ir coatings were composed of a nucleation layer with columnar structure and a growth layer with laminar structure. The top surfaces of the laminar Ir coatings consisted of cauliflower-like aggregates containing many fine grains, which were separated by deep grooves. The laminar Ir coating produced at the deposition condition of 20 mA/cm2 (Jm), 10% (R) and 6 Hz (f) was quite smooth (Ra 1.01 ± 0.09 μm) with extremely high degree of preferred orientation of <1 1 1>, and its laminar structure was well developed with clear boundaries and uniform thickness of sub-layers.

Advanced detectors and signal processing for bubble memories

NASA Technical Reports Server (NTRS)

Kryder, M. H.; Rasky, P. H. L.; Greve, D. W.

1985-01-01

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Results of bubble film annealing indicate that a low temperature silicon on garnet technology is the most likely one to succeed commercially. Annealing ambients are also shown to have a major effect on the magnetic properties of bubble films. Functional MOSFETs were fabricated on bubble films coated with thick (approximately 1 micron) SiO2 layers. The two main problems with these silicon on garnet MOSFETs are low electron mobilities and large gate leakage currents. Results indicate that the laser recrystallized silicon and gate oxide (SiO2) layers are contaminated. The data suggest that part of the contaminating ions originate in the sputtered oxide spacer layer and part originates in the bubble film itself. A diffusion barrier, such as silicon nitride, placed between the bubble film and the silicon layer should eliminate the contamination induced problem.

Trace and surface analysis of ceramic layers of solid oxide fuel cells by mass spectrometry.

PubMed

Becker, J S; Breuer, U; Westheide, J; Saprykin, A I; Holzbrecher, H; Nickel, H; Dietze, H J

1996-06-01

For the trace analysis of impurities in thick ceramic layers of a solid oxide fuel cell (SOFC) sensitive solid-state mass spectrometric methods, such as laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) and radiofrequency glow discharge mass spectrometry (rf-GDMS) have been developed and used. In order to quantify the analytical results of LA-ICP-MS, the relative sensitivity coefficients of elements in a La(0.6)Sr(0.35)MnO(3) matrix have been determined using synthetic standards. Secondary ion mass spectrometry (SIMS) - as a surface analytical method - has been used to characterize the element distribution and diffusion profiles of matrix elements on the interface of a perovskite/Y-stabilized ZrO(2) layer. The application of different mass spectrometric methods for process control in the preparation of ceramic layers for the SOFC is described.

Hafnium Oxide Film Etching Using Hydrogen Chloride Gas

NASA Astrophysics Data System (ADS)

Habuka, Hitoshi; Yamaji, Masahiko; Kobori, Yoshitsugu; Horii, Sadayoshi; Kunii, Yasuo

2009-12-01

Hydrogen chloride gas removes the hafnium oxide film formed by atomic layer deposition at the etch rate of about 1 nm/min. A 100 nm-thick hafnium oxide film was perfectly etched off at 1173 K for 60 min by 100% hydrogen chloride gas at 100 sccm. A weight decrease in the hafnium oxide film was observed at temperatures higher than ca. 600 K, which corresponds to the sublimation point of hafnium tetrachloride. The etching by-product is considered to be hafnium tetrachloride. The etching technique developed in this study is expected to be applicable to various processes, such as the cleaning of a hafnium oxide film deposition reactor.

Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

NASA Technical Reports Server (NTRS)

Lieneweg, U.; Bean, J. C.

1984-01-01

Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

Magnetic property zonation in a thick lava flow

NASA Astrophysics Data System (ADS)

Audunsson, Haraldur; Levi, Shaul; Hodges, Floyd

1992-04-01

Intraflow structures and magmatic evolution in an extensive and thick (30-60 m) basaltic lava flow are examined on the basis of grain size and composition-dependent magnetic properties of titanomagnetite materials. Microprobe data indicate that the intraflow oxidation state Fe(3+)/Fe(2+) of the initially precipitated primary titanomagnetites increases with falling equilibrium temperature from the flow margins to a maximum near the center, the position of lowest equilibrium temperature. In contrast, Curie temperature measurements indicate that titanomagnetite oxidation increases with height in the flow. Modification of the initially symmetric equilibrium titanomagnetite compositions was caused by subsolidus high-temperature oxidation possibly due to hydrogen loss produced by dissociation of magmatic water, as well as unknown contributions of circulating air and percolating water from above. The titanomagnetites of the basal layer of the flow remain essentially unaltered.

All-nanoparticle self-assembly ZnO/TiO₂ heterojunction thin films with remarkably enhanced photoelectrochemical activity.

PubMed

Yuan, Sujun; Mu, Jiuke; Mao, Ruiyi; Li, Yaogang; Zhang, Qinghong; Wang, Hongzhi

2014-04-23

The multilaminated ZnO/TiO2 heterojunction films were successfully deposited on conductive substrates including fluorine-doped tin oxide (FTO) glass and flexible indium tin oxide coated poly(ethylene terephthalate) via the layer-by-layer (LBL) self assembly method from the oxide colloids without using any polyelectrolytes. The positively charged ZnO nanoparticles and the negatively charged TiO2 nanoparticles were directly used as the components in the consecutive deposition process to prepare the heterojunction thin films by varying the thicknesses. Moreover, the crystal growth of both oxides could be efficiently inhibited by the good connection between ZnO and TiO2 nanoparticles even after calcination at 500 °C, especially for ZnO which was able to keep the crystallite size under 25 nm. The as-prepared films were used as the working electrodes in the three-electrode photoelectrochemical cells. Because the well-contacted nanoscale heterojunctions were formed during the LBL self-assembling process, the ZnO/TiO2 all-nanoparticle films deposited on both substrates showed remarkably enhanced photoelectrochemical properties compared to that of the well-established TiO2 LBL thin films with similar thicknesses. The photocurrent response collected from the ZnO/TiO2 electrode on the FTO glass substrate was about five times higher than that collected from the TiO2 electrode. Owing to the absence of the insulating layer of dried polyelectrolytes, the ZnO/TiO2 all-nanoparticle heterojunction films were expected to be used in the photoelectrochemical device before calcination.

Mechanisms of nitrous oxide (N2 O) formation and reduction in denitrifying biofilms.

PubMed

Sabba, Fabrizio; Picioreanu, Cristian; Nerenberg, Robert

2017-12-01

Nitrous oxide (N 2 O) is a potent greenhouse gas that can be formed in wastewater treatment processes by ammonium oxidizing and denitrifying microorganisms. While N 2 O emissions from suspended growth systems have been extensively studied, and some recent studies have addressed emissions from nitrifying biofilms, much less is known about N 2 O emissions from denitrifying biofilm processes. This research used modeling to evaluate the mechanisms of N 2 O formation and reduction in denitrifying biofilms. The kinetic model included formation and consumption of key denitrification species, including nitrate (NO3-), nitrite (NO2-), nitric oxide (NO), and N 2 O. The model showed that, in presence of excess of electron donor, denitrifying biofilms have two distinct layers of activity: an outer layer where there is net production of N 2 O and an inner layer where there is net consumption. The presence of oxygen (O 2 ) had an important effect on N 2 O emission from suspended growth systems, but a smaller effect on biofilm systems. The effects of NO3- and O 2 differed significantly based on the biofilm thickness. Overall, the effects of biofilm thickness and bulk substrate concentrations on N 2 O emissions are complex and not always intuitive. A key mechanism for denitrifying biofilms is the diffusion of N 2 O and other intermediates from one zone of the biofilm to another. This leads to zones of N 2 O formation or consumption transformations that would not exist in suspended growth systems. © 2017 Wiley Periodicals, Inc.