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Sample records for oxide liti2o4 thin

  1. Raman study of electron-phonon coupling in thin films of the spinel oxide superconductor LiTi2O4

    NASA Astrophysics Data System (ADS)

    Chen, D.; Jia, Y.-L.; Zhang, T.-T.; Fang, Z.; Jin, K.; Richard, P.; Ding, H.

    2017-09-01

    We performed a Raman scattering study of thin films of LiTi2O4 spinel oxide superconductor. We detected four out of five Raman active modes, with frequencies in good accordance with our first-principles calculations. Three T2 g modes show a Fano lineshape from 5 K to 295 K, which suggests an electron-phonon coupling in LiTi2O4 . Interestingly, the electron-phonon coupling shows an anomaly across the negative to positive magnetoresistance transition at 50 K, which may be due to the onset of other competing orders. The strength of the electron-phonon interaction estimated from the Allen's formula and the observed lineshape parameters suggest that the three T2 g modes at 0 momentum are not sufficient to drive superconductivity.

  2. Lithium outdiffusion in LiTi2O4 thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mesoraca, S.; Kleibeuker, J. E.; Prasad, B.; MacManus-Driscoll, J. L.; Blamire, M. G.

    2016-11-01

    We report surface chemical cation composition analysis of high quality superconducting LiTi2O4 thin films, grown epitaxially on MgAl2O4 (111) substrates by pulsed laser deposition. The superconducting transition temperature of the films was 13.8 K. Surface chemical composition is crucial for the formation of a good metal/insulator interface for integrating LiTi2O4 into full-oxide spin-filtering devices in order to minimize the formation of structural defects and increase the spin polarisation efficiency. In consideration of this, we report a detailed angle resolved x-ray photoelectron spectroscopy analysis. Results show Li segregation at the surface of LiTi2O4 films. We attribute this process due to outdiffusion of Li toward the outermost LiTi2O4 layers.

  3. Time domain THz studies of thin film spinel superconductor LiTi2O4

    NASA Astrophysics Data System (ADS)

    Jasper, Evan; Warren, M. T.; Mai, T. T.; Brangham, J.; Valdés Aguilar, R.; Shin, J. M.; Takeuchi, I.; Greene, R. L.

    Recent advances in growth of high-quality crystalline thin films of the only known spinel superconductor (SC) LiTi2O4 have allowed the discovery of an anomalous anisotropic magnetoresistance in its normal state. We have used time domain terahertz spectroscopy, a contactless transport measurement, to determine the ac conductivity of LiTi2O4 and to examine the BCS nature of the superconducting state. We obtained the temperature dependence of the SC gap as well as the London penetration depth, and also found a hint of a second gap. We will discuss and compare these results in terms of the known dc transport properties. Work at OSU supported by start-up funds to RVA. Work at UMD supported by UMDAFOSR FA95501410332, and NSF DMR 1410665.

  4. Scanning tunnelling spectroscopy of superconductivity on surfaces of LiTi2O4(111) thin films

    NASA Astrophysics Data System (ADS)

    Okada, Yoshinori; Ando, Yasunobu; Shimizu, Ryota; Minamitani, Emi; Shiraki, Susumu; Watanabe, Satoshi; Hitosugi, Taro

    2017-07-01

    Unique superconductivity at surfaces/interfaces, as exemplified by LaAlO3/SrTiO3 interfaces, and the high transition temperature in ultrathin FeSe films, have triggered intense debates on how superconductivity is affected in atomic and electronic reconstructions. The surface of superconducting cubic spinel oxide LiTi2O4 is another interesting system because its inherent surface electronic and atomic reconstructions add complexity to superconducting properties. Investigations of such surfaces are hampered by the lack of single crystals or high-quality thin films. Here, using low-temperature scanning tunnelling microscopy and spectroscopy, we report an unexpected small superconducting energy gap and a long coherence length on the surface of LiTi2O4(111) epitaxial thin films. Furthermore, we find that a pseudogap opening at the Fermi energy modifies the surface superconductivity. Our results open an avenue for exploring anomalous superconductivity on the surface of cubic transition-metal oxides, where the electronic states are spontaneously modulated involving rich many-body interactions.

  5. Scanning tunnelling spectroscopy of superconductivity on surfaces of LiTi2O4(111) thin films.

    PubMed

    Okada, Yoshinori; Ando, Yasunobu; Shimizu, Ryota; Minamitani, Emi; Shiraki, Susumu; Watanabe, Satoshi; Hitosugi, Taro

    2017-07-03

    Unique superconductivity at surfaces/interfaces, as exemplified by LaAlO3/SrTiO3 interfaces, and the high transition temperature in ultrathin FeSe films, have triggered intense debates on how superconductivity is affected in atomic and electronic reconstructions. The surface of superconducting cubic spinel oxide LiTi2O4 is another interesting system because its inherent surface electronic and atomic reconstructions add complexity to superconducting properties. Investigations of such surfaces are hampered by the lack of single crystals or high-quality thin films. Here, using low-temperature scanning tunnelling microscopy and spectroscopy, we report an unexpected small superconducting energy gap and a long coherence length on the surface of LiTi2O4(111) epitaxial thin films. Furthermore, we find that a pseudogap opening at the Fermi energy modifies the surface superconductivity. Our results open an avenue for exploring anomalous superconductivity on the surface of cubic transition-metal oxides, where the electronic states are spontaneously modulated involving rich many-body interactions.

  6. Scanning tunnelling spectroscopy of superconductivity on surfaces of LiTi2O4(111) thin films

    PubMed Central

    Okada, Yoshinori; Ando, Yasunobu; Shimizu, Ryota; Minamitani, Emi; Shiraki, Susumu; Watanabe, Satoshi; Hitosugi, Taro

    2017-01-01

    Unique superconductivity at surfaces/interfaces, as exemplified by LaAlO3/SrTiO3 interfaces, and the high transition temperature in ultrathin FeSe films, have triggered intense debates on how superconductivity is affected in atomic and electronic reconstructions. The surface of superconducting cubic spinel oxide LiTi2O4 is another interesting system because its inherent surface electronic and atomic reconstructions add complexity to superconducting properties. Investigations of such surfaces are hampered by the lack of single crystals or high-quality thin films. Here, using low-temperature scanning tunnelling microscopy and spectroscopy, we report an unexpected small superconducting energy gap and a long coherence length on the surface of LiTi2O4(111) epitaxial thin films. Furthermore, we find that a pseudogap opening at the Fermi energy modifies the surface superconductivity. Our results open an avenue for exploring anomalous superconductivity on the surface of cubic transition-metal oxides, where the electronic states are spontaneously modulated involving rich many-body interactions. PMID:28671187

  7. Anomalous magnetoresistance in the spinel superconductor LiTi2O4

    NASA Astrophysics Data System (ADS)

    Jin, K.; He, G.; Zhang, X.; Maruyama, S.; Yasui, S.; Suchoski, R.; Shin, J.; Jiang, Y.; Yu, H. S.; Yuan, J.; Shan, L.; Kusmartsev, F. V.; Greene, R. L.; Takeuchi, I.

    2015-05-01

    LiTi2O4 is a unique compound in that it is the only known spinel oxide superconductor. The lack of high quality single crystals has thus far prevented systematic investigations of its transport properties. Here we report a careful study of transport and tunnelling spectroscopy in epitaxial LiTi2O4 thin films. An unusual magnetoresistance is observed which changes from nearly isotropic negative to prominently anisotropic positive as the temperature is decreased. We present evidence that shows that the negative magnetoresistance likely stems from the suppression of local spin fluctuations or spin-orbit scattering centres. The positive magnetoresistance suggests the presence of an orbital-related state, also supported by the fact that the superconducting energy gap decreases as a quadratic function of magnetic field. These observations indicate that the spin-orbital fluctuations play an important role in LiTi2O4 in a manner similar to high-temperature superconductors.

  8. Anomalous magnetoresistance in the spinel superconductor LiTi2O4.

    PubMed

    Jin, K; He, G; Zhang, X; Maruyama, S; Yasui, S; Suchoski, R; Shin, J; Jiang, Y; Yu, H S; Yuan, J; Shan, L; Kusmartsev, F V; Greene, R L; Takeuchi, I

    2015-05-20

    LiTi2O4 is a unique compound in that it is the only known spinel oxide superconductor. The lack of high quality single crystals has thus far prevented systematic investigations of its transport properties. Here we report a careful study of transport and tunnelling spectroscopy in epitaxial LiTi2O4 thin films. An unusual magnetoresistance is observed which changes from nearly isotropic negative to prominently anisotropic positive as the temperature is decreased. We present evidence that shows that the negative magnetoresistance likely stems from the suppression of local spin fluctuations or spin-orbit scattering centres. The positive magnetoresistance suggests the presence of an orbital-related state, also supported by the fact that the superconducting energy gap decreases as a quadratic function of magnetic field. These observations indicate that the spin-orbital fluctuations play an important role in LiTi2O4 in a manner similar to high-temperature superconductors.

  9. Growth and characterization of superconducting spinel oxide LiTi2O4 thin films

    SciTech Connect

    Chopdekar, R.V.; Wong, F.; Takamura, Y.; Arenholz, E.; Suzuki, Y.

    2009-03-10

    Epitaxial films of LiTi{sub 2}O{sub 4} on single crystalline substrates of MgAl{sub 2}O{sub 4}, MgO, and SrTiO{sub 3} provide model systems to systematically explore the effects of lattice strain and microstructural disorder on the superconducting state. Lattice strain that affects bandwidth gives rise to variations in the superconducting and normal state properties. Microstructural disorder, such as antiphase boundaries that give rise to Ti network disorder, reduces the critical temperature, and Ti network disorder combined with Mg interdiffusion lead to a much more dramatic effect on the superconducting state. Surface sensitive X-ray absorption spectroscopy has identified Ti to retain site symmetry and average valence of the bulk material regardless of film thickness.

  10. Lithium recovery with LiTi2O4 ion-sieves.

    PubMed

    Chen, C-W; Chen, P-A; Wei, C-J; Huang, H-L; Jou, C-J; Wei, Y-L; Wang, H Paul

    2017-02-12

    A feasibility study for the recovery of lithium from salt water with the protonated lithium titanium oxide ion-sieves was carried out in this work. Lithium ions (Li(+)) in LiTi2O4 having a similar ion density with H(+) allow repeated exchanges and regeneration with high selectivity. By Li(7) magic angle spinning solid-state magnetic resonance, it is apparent that chemical structure of lithium in the ion-sieves is not perturbed during the repeated Li(+)/H(+) exchange processes. As the dissolution of titanium is negligible (<0.1%), the secondary contamination during the capture process can be minimized. The ion-sieves exhibit lithium capture capacities of up to 9.5mg/g during the repeated Li(+)/H(+) exchanges with H0.23Li0.77Ti2O4/LiTi2O4 for 24h, and the captured Li(+) may be recovered in the form of Li2CO3. Accordingly, the lithium capture method developed in this work could be integrated with current desalination processes for valuable lithium recovery. Copyright © 2017 Elsevier Ltd. All rights reserved.

  11. Reversible superconductor-insulator transition in LiTi2O4 induced by Li-ion electrochemical reaction.

    PubMed

    Yoshimatsu, K; Niwa, M; Mashiko, H; Oshima, T; Ohtomo, A

    2015-11-06

    Transition metal oxides display various electronic and magnetic phases such as high-temperature superconductivity. Controlling such exotic properties by applying an external field is one of the biggest continuous challenges in condensed matter physics. Here, we demonstrate clear superconductor-insulator transition of LiTi2O4 films induced by Li-ion electrochemical reaction. A compact electrochemical cell of pseudo-Li-ion battery structure is formed with a superconducting LiTi2O4 film as an anode. Li content in the film is controlled by applying a constant redox voltage. An insulating state is achieved by Li-ion intercalation to the superconducting film by applying reduction potential. In contrast, the superconducting state is reproduced by applying oxidation potential to the Li-ion intercalated film. Moreover, superconducting transition temperature is also recovered after a number of cycles of Li-ion electrochemical reactions. This complete reversible transition originates in difference in potentials required for deintercalation of initially contained and electrochemically intercalated Li(+) ions.

  12. Reversible superconductor-insulator transition in LiTi2O4 induced by Li-ion electrochemical reaction

    PubMed Central

    Yoshimatsu, K.; Niwa, M.; Mashiko, H.; Oshima, T.; Ohtomo, A.

    2015-01-01

    Transition metal oxides display various electronic and magnetic phases such as high-temperature superconductivity. Controlling such exotic properties by applying an external field is one of the biggest continuous challenges in condensed matter physics. Here, we demonstrate clear superconductor-insulator transition of LiTi2O4 films induced by Li-ion electrochemical reaction. A compact electrochemical cell of pseudo-Li-ion battery structure is formed with a superconducting LiTi2O4 film as an anode. Li content in the film is controlled by applying a constant redox voltage. An insulating state is achieved by Li-ion intercalation to the superconducting film by applying reduction potential. In contrast, the superconducting state is reproduced by applying oxidation potential to the Li-ion intercalated film. Moreover, superconducting transition temperature is also recovered after a number of cycles of Li-ion electrochemical reactions. This complete reversible transition originates in difference in potentials required for deintercalation of initially contained and electrochemically intercalated Li+ ions. PMID:26541508

  13. Li-ion diffusion in Li4Ti5O12 and LiTi2O4 battery materials detected by muon spin spectroscopy

    NASA Astrophysics Data System (ADS)

    Sugiyama, Jun; Nozaki, Hiroshi; Umegaki, Izumi; Mukai, Kazuhiko; Miwa, Kazutoshi; Shiraki, Susumu; Hitosugi, Taro; Suter, Andreas; Prokscha, Thomas; Salman, Zaher; Lord, James S.; Mânsson, Martin

    2015-07-01

    Lithium diffusion in spinel Li4Ti5O12 and LiTi2O4 compounds for future battery applications has been studied with muon spin relaxation (μ+SR ) . Measurements were performed on both thin-film and powder samples in the temperature range between 25 and 500 K. For Li4Ti5O12 and above about ˜200 K , the field distribution width (Δ ) is found to decrease gradually, while the field fluctuation rate (ν ) increases exponentially with temperature. For LiTi2O4 , on the contrary, the Δ (T ) curve shows a steplike decrease at ˜350 K , around which the ν (T ) curve exhibits a local maximum. These behaviors suggest that Li+ starts to diffuse above around 200 K for both spinels. Assuming a jump diffusion of Li+ at the tetrahedral 8 a site to the vacant octahedral 16 c site, diffusion coefficients of Li+ at 300 K in the film samples are estimated as (3.2 ±0.8 ) ×10-11 cm2/s for Li4Ti5O12 and (3.6 ±1.1 ) ×10-11 cm2/s for LiTi2O4 . Further, some small differences are found in both thermal activation energies and Li-ion diffusion coefficients between the powder and thin-film samples.

  14. Lithium diffusion in spinel Li4Ti5O12 and LiTi2O4 films detected with 8Liβ -NMR

    NASA Astrophysics Data System (ADS)

    Sugiyama, Jun; Umegaki, Izumi; Uyama, Takeshi; McFadden, Ryan M. L.; Shiraki, Susumu; Hitosugi, Taro; Salman, Zaher; Saadaoui, Hassan; Morris, Gerald D.; MacFarlane, W. Andrew; Kiefl, Robert F.

    2017-09-01

    Diffusion of Li+ in (111) oriented thin films of the spinels Li4Ti5O12 and LiTi2O4 has been studied with 8Liβ -detected NMR in the temperature range between 5 and 310 K. In Li4Ti5O12 , the spin-lattice relaxation rate (1 /T1 ) versus temperature shows a clear maximum around 100 K (=Tmax ) which we attribute to magnetic freezing of dilute Ti3 + local magnetic moments, consistent with the results of magnetization and muon spin relaxation (μ+SR ) measurements. The decrease in 1 /T1 with temperature above Tmax indicates that Li+ starts to diffuse with a thermal activation energy (Ea) of 0.11(1) eV. In LiTi2O4 , on the contrary, as temperature increases from 200 K, 1 /T1 increases monotonically up to 310 K. This suggests that Li also starts to diffuse above 200 K with Ea=0.16 (2 ) eV in LiTi2O4 . Comparison with conventional Li-NMR on Li4Ti5O12 implies that both β -NMR and μ+SR sense short-range Li motion, i.e., a jump diffusion of Li+ to the nearest neighboring sites.

  15. Structural stabilities, surface morphologies and electronic properties of spinel LiTi2O4 as anode materials for lithium-ion battery: A first-principles investigation

    NASA Astrophysics Data System (ADS)

    Wang, Qi; Yu, Hai-Tao; Xie, Ying; Li, Ming-Xia; Yi, Ting-Feng; Guo, Chen-Feng; Song, Qing-Shan; Lou, Ming; Fan, Shan-Shan

    2016-07-01

    The thermodynamic stabilities, surface morphologies, and electronic structures of the LiTi2O4 compound were investigated by the first-principles methods. The formation enthalpies and lattice constants of LixTi2O4 decrease at first and then increase again. This phenomenon is related to the balance between Lisbnd O attractions and Lisbnd Li repulsions. Population analysis revealed that pure ionic and strong covalent bonds are formed respectively between lithium and oxygen and between titanium and oxygen in LiTi2O4 material. These interactions are very crucial for the thermodynamic stability of the compounds. The surface stability was considered as functions of the chemical potentials, and five terminations, (100)-Ti2O4, (110)-Ti2O4, (210)-Ti2O4, (111)-LiTiO4, and (310)-Ti2O8ones, are dominant in the stability diagram. Our calculation showed that a particle morphology with mono (110) facet can be obtained at Ti- and/or O-moderate conditions, and this morphology will be very helpful for improving the rate performance of the material via reduction of the lithium diffusion distance. Furthermore, partially filled electronic states at the Fermi energy were confirmed for bulk LiTi2O4 and some of the surfaces, and they are responsible for the excellent electronic conductivity of the material. Further calculations showed that the work functions are sensitive to the stoichiometry of the surfaces.

  16. The first-principles study for the novel optical properties of LiTi2O4, Li4Ti5O12, Li2Ti2O4 and Li7Ti5O12

    NASA Astrophysics Data System (ADS)

    Liu, Yuxiang; Lian, Jie; Sun, Zhaozong; Zhao, Minglin; Shi, Yujun; Song, Haonan

    2017-06-01

    With the first-principles method based on the density functional theory (DFT), we studied novel optical properties of LiTi2O4, Li4Ti5O12, Li2Ti2O4 and Li7Ti5O12, respectively. According to the calculated electronic structures, the electron redistribution upon Li-ion intercalation has an obvious influence on the electronic transitions between O 2p and Ti 3d states, resulting in distinctions of optical properties between LiTi2O4, Li4Ti5O12, Li2Ti2O4 and Li7Ti5O12. These results not only reveal the fundamental origin of optical properties but also provide practical guidance on optical applications for these materials.

  17. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  18. Thin-Film Solid Oxide Fuel Cells

    NASA Technical Reports Server (NTRS)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  19. Electrochromism in copper oxide thin films

    SciTech Connect

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  20. Sprayed lanthanum doped zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Bouznit, Y.; Beggah, Y.; Ynineb, F.

    2012-01-01

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  1. Electrochromism: from oxide thin films to devices

    NASA Astrophysics Data System (ADS)

    Rougier, A.; Danine, A.; Faure, C.; Buffière, S.

    2014-03-01

    In respect of their adaptability and performance, electrochromic devices, ECDs, which are able to change their optical properties under an applied voltage, have received significant attention. Target applications are multifold both in the visible region (automotive sunroofs, smart windows, ophthalmic lenses, and domestic appliances (oven, fridge…)) and in the infrared region (Satellites Thermal Control, IR furtivity). In our group, focusing on oxide thin films grown preferentially at room temperature, optimization of ECDs performances have been achieved by tuning the microstructure, the stoichiometry and the cationic composition of the various layers. Herein, our approach for optimized ECDs is illustrated through the example of WO3 electrochromic layer in the visible and in the IR domain as well as ZnO based transparent conducting oxide layer. Targeting the field of printed electronics, simplification of the device architecture for low power ECDs is also reported.

  2. rf plasma oxidation of Ni thin films sputter deposited to generate thin nickel oxide layers

    SciTech Connect

    Hoey, Megan L.; Carlson, J. B.; Osgood, R. M. III; Kimball, B.; Buchwald, W.

    2010-10-11

    Nickel oxide (NiO) layers were formed on silicon (Si) substrates by plasma oxidation of nickel (Ni) film lines. This ultrathin NiO layer acted as a barrier layer to conduction, and was an integral part of a metal-insulator-metal (MIM) diode, completed by depositing gold (Au) on top of the oxide. The electrical and structural properties of the NiO thin film were examined using resistivity calculations, current-voltage (I-V) measurements and cross-sectional transmission electron microscopy (XTEM) imaging. The flow rate of the oxygen gas, chamber pressure, power, and exposure time and their influence on the characteristics of the NiO thin film were studied.

  3. Complex oxide thin films for microelectronics

    NASA Astrophysics Data System (ADS)

    Suvorova, Natalya

    The rapid scaling of the device dimensions, namely in metal oxide semiconductor field effect transistor (MOSFET), is reaching its fundamental limit which includes the increase in allowable leakage current due to direct tunneling with decrease of physical thickness of SiO2 gate dielectric. The significantly higher relative dielectric constant (in the range 9--25) of the gate dielectric beyond the 3.9 value of silicon dioxide will allow increasing the physical thickness. Among the choices for the high dielectric constant (K) materials for future generation MOSFET application, barium strontium titanate (BST) and strontium titanate (STO) possess one of the highest attainable K values making them the promising candidates for alternative gate oxide. However, the gate stack engineering does not imply the simple replacement of the SiO2 with the new dielectric. Several requirements should be met for successful integration of a new material. The major one is a production of high level of interface states (Dit) compared to that of SiO 2 on Si. An insertion of a thin SiO2 layer prior the growth of high-K thin film is a simple solution that helps to limit reaction with Si substrate and attains a high quality interface. However, the combination of two thin films reduces the overall K of the dielectric stack. An optimization of the SiO2 underlayer in order to maintain the interface quality yet minimize the effect on K is the focus of this work. The results from our study are presented with emphasis on the key process parameters that improve the dielectric film stack. For in-situ growth characterization of BST and STO films sputter deposited on thermally oxidized Si substrates spectroscopic ellipsometry in combination with time of flight ion scattering and recoil spectrometry have been employed. Studies of material properties have been complemented with analytical electron microscopy. To evaluate the interface quality the electrical characterization has been employed using

  4. Doping in zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Yang, Zheng

    Doping in zinc oxide (ZnO) thin films is discussed in this dissertation. The optimizations of undoped ZnO thin film growth using molecular-beam epitaxy (MBE) are discussed. The effect of the oxygen ECR plasma power on the growth rate, structural, electrical, and optical properties of the ZnO thin films were studied. It was found that larger ECR power leads to higher growth rate, better crystallinity, lower electron carrier concentration, larger resistivity, and smaller density of non-radiative luminescence centers in the ZnO thin films. Low-temperature photoluminescence (PL) measurements were carried out in undoped and Ga-doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8 x 1018 to 1.8 x 1020 cm-3, the dominant PL line at 9 K changes from I1 (3.368--3.371 eV), to IDA (3.317--3.321 eV), and finally to I8 (3.359 eV). The dominance of I1, due to ionized-donor bound excitons, is unexpected in n-type samples, but is shown to be consistent with the temperature-dependent Hall fitting results. We also show that IDA has characteristics of a donor-acceptor-pair transition, and use a detailed, quantitative analysis to argue that it arises from GaZn donors paired with Zn-vacancy (VZn) acceptors. In this analysis, the GaZn0/+ energy is well-known from two-electron satellite transitions, and the VZn0/- energy is taken from a recent theoretical calculation. Typical behaviors of Sb-doped p-type ZnO are presented. The Sb doping mechanisms and preference in ZnO are discussed. Diluted magnetic semiconducting ZnO:Co thin films with above room-temperature TC were prepared. Transmission electron microscopy and x-ray diffraction studies indicate the ZnO:Co thin films are free of secondary phases. The magnetization of the ZnO:Co thin films shows a free electron carrier concentration dependence, which increases dramatically when the free electron carrier concentration exceeds ˜1019 cm -3, indicating a carrier-mediated mechanism for

  5. Review of Zinc Oxide Thin Films

    DTIC Science & Technology

    2014-12-23

    Laboratory Air Force Materiel Command   a. REPORT U   b. ABSTRACT U   c. THIS PAGE U REPORT DOCUMENTATION PAGE Form ApprovedOMB No. 0704-0188 The public...PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ORGANIZATION. 1.  REPORT DATE (DD-MM-YYYY)      18-12-2014 2.  REPORT TYPE      Final Performance 3.  DATES...Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std. Z39.18 1    Review of Zinc Oxide Thin Films   Abstract  The present review paper reports on the

  6. Thin films for micro solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Beckel, D.; Bieberle-Hütter, A.; Harvey, A.; Infortuna, A.; Muecke, U. P.; Prestat, M.; Rupp, J. L. M.; Gauckler, L. J.

    Thin film deposition as applied to micro solid oxide fuel cell (μSOFC) fabrication is an emerging and highly active field of research that is attracting greater attention. This paper reviews thin film (thickness ≤1 μm) deposition techniques and components relevant to SOFCs including current research on nanocrystalline thin film electrolyte and thin-film-based model electrodes. Calculations showing the geometric limits of μSOFCs and first results towards fabrication of μSOFCs are also discussed.

  7. Method of producing solution-derived metal oxide thin films

    SciTech Connect

    Boyle, T.J.; Ingersoll, D.

    2000-07-11

    A method is described for preparing metal oxide thin films by a solution method. A {beta}-metal {beta}-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  8. Method of producing solution-derived metal oxide thin films

    DOEpatents

    Boyle, Timothy J.; Ingersoll, David

    2000-01-01

    A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  9. Active Oxygen Generator by Silent Discharge and Oxidation Power in Formation of Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Tanaka, Masaaki; Kawagoe, Yasuyuki; Tsukazaki, Hisashi; Yamanishi, Kenichiro

    We have studied the low pressure silent discharge type active oxygen generator in terms of the application to the formation of oxide thin films. In this paper the oxidation power of active oxygen in the oxide thin film formation is compared with that of oxygen and ozone by forming silicon oxide thin films. It was confirmed that the oxidation power is in turn of active oxygen > ozone > oxygen from the experimental result of the number of x in SiOx thin film. Furthermore we applied active oxygen to the formation of the thin film high temperature super conductor and active oxygen was found to be effective to the formation of the thin film with high performance.

  10. Investigation of electrodeposited cuprous oxide thin films

    NASA Astrophysics Data System (ADS)

    Mortensen, Emma L.

    This dissertation focuses on improvements to electrodeposited cuprous oxide as a candidate for the absorber layer for a thin film solar cell that could be integrated into a mechanical solar cell stack. Cuprous oxide (Cu2O) is an earth abundant material that has a bandgap of 2 eV with absorption coefficients around 102-106 cm-1. This bandgap is not optimized for use as a single-junction solar cell, but could be ideal for use in a tandem solar cell device. The theoretical efficiency of a material with a bandgap of 2.0 eV is 20%. The greatest actual efficiency that has been achieved for a Cu2O solar cell is only 8.1%. For the present work the primary focus has been on improving the microstructure of the absorber layer film. The Cu2O films were fabricated using electrodeposition. A seeding layer was developed using gold (Au); which was manipulated into nano-islands and used as the substrate for the Cu2O electrodeposition. The films were characterized and compared to determine the growth mechanism of each film using scanning electron microscopy (SEM). X-ray diffraction (XRD) was used to establish and compare the chemical phases that were present in each of the films. The crystal structure of the Cu2O film grown on gold was explored using transmission electron microscopy (TEM), and this helped confirm the effect that the gold had on the growth of Cu2O. The Tauc method was then used to determine the bandgap of the films of Cu2O grown on both substrates and this showed that the Au based Cu2O film was a superior film. Electrical tests were also completed using a solar simulator and this established that the film grown on gold exhibited photoconductivity that was not seen on the film without gold. In addition, for this thesis, a method for depositing an n-type Cu2O film, based on a Cu-metal solution-boiling process, was investigated. Three forms of copper were tested: a sheet of copper, electrodeposited copper, and sputtered copper. The chemical phases were observed using

  11. Unidirectional oxide hetero-interface thin-film diode

    SciTech Connect

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  12. Structural characterization of impurified zinc oxide thin films

    SciTech Connect

    Trinca, L. M.; Galca, A. C. Stancu, V. Chirila, C. Pintilie, L.

    2014-11-05

    Europium doped zinc oxide (Eu:ZnO) thin films have been obtained by pulsed laser deposition (PLD). 002 textured thin films were achieved on glass and silicon substrates, while hetero-epilayers and homo-epilayers have been attained on single crystal SrTiO{sub 3} and ZnO, respectively. X-ray Diffraction (XRD) was employed to characterize the Eu:ZnO thin films. Extended XRD studies confirmed the different thin film structural properties as function of chosen substrates.

  13. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    SciTech Connect

    Coloma Ribera, R. Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F.

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  14. High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications

    NASA Astrophysics Data System (ADS)

    Jin, Yao O.; John, David Saint; Podraza, Nikolas J.; Jackson, Thomas N.; Horn, Mark W.

    2015-03-01

    Molybdenum oxide (MoOx) and nickel oxide (NiOx) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000 Ω.cm with a temperature coefficient of resistance (TCR) from -1.7% to -3.2%/K, and NiOx thin film resistivity varied from 1 to 300 Ω.cm with a TCR from -2.2% to -3.3%/K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoOx and NiOx thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoOx or NiOx thin films offer improved process control for resistive temperature sensors.

  15. Lateral solid-phase epitaxy of oxide thin films on glass substrate seeded with oxide nanosheets.

    PubMed

    Taira, Kenji; Hirose, Yasushi; Nakao, Shoichiro; Yamada, Naoomi; Kogure, Toshihiro; Shibata, Tatsuo; Sasaki, Takayoshi; Hasegawa, Tetsuya

    2014-06-24

    We developed a technique to fabricate oxide thin films with uniaxially controlled crystallographic orientation and lateral size of more than micrometers on amorphous substrates. This technique is lateral solid-phase epitaxy, where epitaxial crystallization of amorphous precursor is seeded with ultrathin oxide nanosheets sparsely (≈10% coverage) deposited on the substrate. Transparent conducting Nb-doped anatase TiO2 thin films were fabricated on glass substrates by this technique. Perfect (001) orientation and large grains with lateral sizes up to 10 μm were confirmed by X-ray diffraction, atomic force microscopy, and electron beam backscattering diffraction measurements. As a consequence of these features, the obtained film exhibited excellent electrical transport properties comparable to those of epitaxial thin films on single-crystalline substrates. This technique is a versatile method for fabricating high-quality oxide thin films other than anatase TiO2 and would increase the possible applications of oxide-based thin film devices.

  16. Pulsed photonic fabrication of nanostructured metal oxide thin films

    NASA Astrophysics Data System (ADS)

    Bourgeois, Briley B.; Luo, Sijun; Riggs, Brian C.; Adireddy, Shiva; Chrisey, Douglas B.

    2017-09-01

    Nanostructured metal oxide thin films with a large specific surface area are preferable for practical device applications in energy conversion and storage. Herein, we report instantaneous (milliseconds) photonic synthesis of three-dimensional (3-D) nanostructured metal oxide thin films through the pulsed photoinitiated pyrolysis of organometallic precursor films made by chemical solution deposition. High wall-plug efficiency-pulsed photonic irradiation (xenon flash lamp, pulse width of 1.93 ms, fluence of 7.7 J/cm2 and frequency of 1.2 Hz) is used for scalable photonic processing. The photothermal effect of subsequent pulses rapidly improves the crystalline quality of nanocrystalline metal oxide thin films in minutes. The following paper highlights pulsed photonic fabrication of 3-D nanostructured TiO2, Co3O4, and Fe2O3 thin films, exemplifying a promising new method for the low-cost and high-throughput manufacturing of nanostructured metal oxide thin films for energy applications.

  17. Characterization of reliability of printed indium tin oxide thin films.

    PubMed

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo

    2013-11-01

    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments.

  18. Review of solution-processed oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Si Joon; Yoon, Seokhyun; Kim, Hyun Jae

    2014-02-01

    In this review, we summarize solution-processed oxide thin-film transistors (TFTs) researches based on our fulfillments. We describe the fundamental studies of precursor composition effects at the beginning in order to figure out the role of each component in oxide semiconductors, and then present low temperature process for the adoption of flexible devices. Moreover, channel engineering for high performance and reliability of solution-processed oxide TFTs and various coating methods: spin-coating, inkjet printing, and gravure printing are also presented. The last topic of this review is an overview of multi-functional solution-processed oxide TFTs for various applications such as photodetector, biosensor, and memory.

  19. Multiferroic oxide thin films and heterostructures

    NASA Astrophysics Data System (ADS)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  20. Multiferroic oxide thin films and heterostructures

    SciTech Connect

    Lu, Chengliang E-mail: Tao.Wu@kaust.edu.sa; Hu, Weijin; Wu, Tom E-mail: Tao.Wu@kaust.edu.sa; Tian, Yufeng

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  1. High quality transparent conducting oxide thin films

    DOEpatents

    Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

    2012-08-28

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  2. Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

    NASA Astrophysics Data System (ADS)

    Deng, Chunqing; Otto, M.; Lupascu, A.

    2014-01-01

    We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

  3. Complex Oxide Thin Film Metamaterial Structures for THz applications

    NASA Astrophysics Data System (ADS)

    Shreiber, D.; Cravey, R.; Cole, M. W.

    2013-03-01

    Metamaterials operating in the frequency range of 0.1-1.5 THz are of a special interest for multiple Army applications such as communications, NDE of materials, and detection of chem./bio hazards. Recently proposed dielectric metamaterials present an intriguing venue for the developments in this field due to their low propagation losses and ease of fabrication. These dielectric metamaterials were implemented in bulk and in thick films. Tunability of ferroelectric complex oxides is achieved by applied bias voltage and constitutes an additional benefit for multiple applications. However, real-life applications require usage of relatively low bias voltage which is achievable only by using a ferroelectric complex oxide thin-film. Although the physical dimensions of the thin film metamaterial structures suggest their usage in IR-optical spectrum, their very high dielectric constant provides a rare opportunity to lower their resonant frequency to the frequency range of interest. This presentation will discuss the opportunities and challenges associated with the metamaterial complex oxide thin film structures including numerical investigations of the resonant frequency shift as a function of the complex oxide thin film dielectric constant and thickness.

  4. Low temperature oxidation mechanisms of nanocrystalline magnetite thin film

    SciTech Connect

    Bourgeois, F.; Gergaud, P.; Feuillet, G.; Renevier, H.; Leclere, C.

    2013-01-07

    A detailed investigation of the mechanisms related to the low temperature oxidation of nanocrystalline magnetite thin films into maghemite is presented. Despite strong differences in the functional properties of these two phases, structural similarities make it difficult to distinguish between them, and to quantify the oxidation process, particularly in the case of nanostructured polycrystalline layers. Contrary to the case of bulk materials or monocrystalline films and particles, the oxidation processes in nanocrystalline thin film have only scarcely been studied. In this work, structural and optical techniques, including X-ray diffraction (XRD), EXAFS/X-ray absorption near edge structure, FTIR, and Raman scattering, have been used to estimate the oxidation rate of magnetite. The overall oxidation reaction rates are discussed in the framework of two limiting cases corresponding to intra grain diffusion and to grain boundary diffusion. SIMS profiling and electrical measurements were also carried out to better assess the oxidation quantification in order to conclude on the predominant oxidation mechanisms in this heterogeneous material. We propose a qualitative model for the structure, in terms of insulating zone distribution, for partially oxidized films.

  5. Low reflectance sputtered vanadium oxide thin films on silicon

    NASA Astrophysics Data System (ADS)

    Esther, A. Carmel Mary; Dey, Arjun; Rangappa, Dinesh; Sharma, Anand Kumar

    2016-07-01

    Vanadium oxide thin films on silicon (Si) substrate are grown by pulsed radio frequency (RF) magnetron sputtering technique at RF power in the range of 100-700 W at room temperature. Deposited thin films are characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques to investigate microstructural, phase, electronic structure and oxide state characteristics. The reflectance and transmittance spectra of the films and the Si substrate are recorded at the solar region (200-2300 nm) of the spectral window. Substantial reduction in reflectance and increase in transmittance is observed for the films grown beyond 200 W. Further, optical constants viz. absorption coefficient, refractive index and extinction coefficient of the deposited vanadium oxide films are evaluated.

  6. Ln polyoxocations: yttrium oxide solution speciation & solution deposited thin films.

    PubMed

    Marsh, David A; Goberna-Ferrón, Sara; Baumeister, Mary K; Zakharov, Lev N; Nyman, May; Johnson, Darren W

    2017-01-17

    Rare earth oxide materials, including thin film coatings, are critically important in magnetic, luminescent and microelectric devices, and few substitutes have been discovered with comparable performance. Thin film coatings from solution are almost unknown for rare earth oxides, likely due to their high activity towards hydrolysis which yields poor quality thin films. The hexamer [Ln6(O)(OH)8(H2O)12(NO3)6](2+) is a rare example of a metal-oxo cluster isolated and stabilized without additional supporting organic ligands. Herein we report a new method for both the preparation and stabilization in non-aqueous media, which makes these clusters valuable precursors for solution-processed thin films. Solution characterization (NMR, small-angle X-ray scattering and Raman spectroscopy) in wet organic solvents indicated that the clusters evolve via a fragmentation and reaggregation process. This is especially true for hexamers of the smaller Ln(3+)-ions: the higher charge density yields higher hydration rates. This process produced an entirely new hexadecameric cluster formulated Y16O3(OH)24(NO3)18(OSMe2)16(OCMe2)2(H2O)4. The new structure represents an intermediate hydrolysis product on the pathway from hexanuclear clusters to metal oxyhydroxide bulk solid. DMSO solvent ligands displace aqua ligands on the cluster and likely explain the additional stability observed for these clusters in organic solvents. The enhanced cluster stability in DMF and DMSO also enables solution-processing methods to create high quality thin films.

  7. Altering properties of cerium oxide thin films by Rh doping

    SciTech Connect

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír; and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  8. Thin film zinc oxide deposited by CVD and PVD

    NASA Astrophysics Data System (ADS)

    Hamelmann, Frank U.

    2016-10-01

    Zinc oxide is known as a mineral since 1810, but it came to scientific interest after its optoelectronic properties found to be tuneable by p-type doping. Since the late 1980’s the number of publications increased exponentially. All thin film deposition technologies, including sol-gel and spray pyrolysis, are able to produce ZnO films. However, for outstanding properties and specific doping, only chemical vapor deposition and physical vapor deposition have shown so far satisfying results in terms of high conductivity and high transparency. In this paper the different possibilities for doping will be discussed, some important applications of doped ZnO thin films will be presented. The deposition technologies used for industrial applications are shown in this paper. Especially sputtering of aluminium doped Zinc Oxide (ZnO:Al or AZO) and LPCVD of boron doped Zinc Oxide (ZnO:B or BZO) are used for the commercial production of transparent conductive oxide films on glass used for thin film photovoltaic cells. For this special application the typical process development for large area deposition is presented, with the important trade-off between optical properties (transparency and ability for light scattering) and electrical properties (conductivity). Also, the long term stability of doped ZnO films is important for applications, humidity in the ambient is often the reason for degradation of the films. The differences between the mentioned materials are presented.

  9. Reactive pulsed magnetron-sputtered tantalum oxide thin films

    NASA Astrophysics Data System (ADS)

    Nielsen, Matthew Christian

    Current high speed, advanced packaging applications require the use of integrated capacitors. Tantalum oxide is one material currently being considered for use in the capacitors; however, the deposition technique used to make the thin film dielectric can alter its performance. Pulsed magnetron reactive sputtering was investigated in this thesis as it offers a robust, clean, and low temperature deposition alternative. This is a new deposition technique created to control the negative effects of target poisoning; however, to understand the relationships between the deposition variables and the resultant film properties a thorough investigation is needed. The instantaneous voltage at the target was captured using a high speed digital oscilloscope. Three target oxidation states were imaged and identified to be that of the metallic and oxidized states with an abrupt transition region separating the two. Using high resolution X-ray photoelectron spectroscopy the bonding present in the deposited films was correlated to the oxidation state of the target. While operating the target in the metallic mode, a mix of oxidized, sub-oxide and metallic states were discovered. Alternatively, the bonding present in the films deposited when the target was in the oxidized state were that of fully oxidized tantalum pentoxide. The films deposited above the critical partial pressure demonstrated excellent leakage current densities. The exact magnitude of the leakage current density inversely scaled to the relative amount of oxygen included into the sputtering atmosphere. Detailed plot analysis showed that there were two different conduction mechanisms controlling the current flow in the capacitors. High frequency test vehicles were measured up to 10 GHz in order to determine the frequency response of the dielectric material. A circuit equivalent model describing the testing system and samples was created and utilized to fit the collected data. Overall, the technique of pulsed magnetron

  10. Nitrogen doped zinc oxide thin film

    SciTech Connect

    Li, Sonny Xiao-zhe

    2003-01-01

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO2 plasma or by N+ implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zni, a native shallow donor. In NO2-grown ZnO films, the n-type conductivity is attributed to (N2)O, a shallow double donor. In NO2-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N2O and N2. Upon annealing, N2O decomposes into N2 and O2. In furnace-annealed samples N2 redistributes diffusively and forms gaseous N2 bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N+ implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N2)O and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  11. Anisotropic thermal conductivity of thin polycrystalline oxide samples

    SciTech Connect

    Tiwari, A.; Boussois, K.; Nait-Ali, B.; Smith, D. S.; Blanchart, P.

    2013-11-15

    This paper reports about the development of a modified laser-flash technique and relation to measure the in-plane thermal diffusivity of thin polycrystalline oxide samples. Thermal conductivity is then calculated with the product of diffusivity, specific heat and density. Design and operating features for evaluating in-plane thermal conductivities are described. The technique is advantageous as thin samples are not glued together to measure in-plane thermal conductivities like earlier methods reported in literature. The approach was employed to study anisotropic thermal conductivity in alumina sheet, textured kaolin ceramics and montmorillonite. Since it is rare to find in-plane thermal conductivity values for such anisotropic thin samples in literature, this technique offers a useful variant to existing techniques.

  12. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  13. Single event gate rupture in thin gate oxides

    SciTech Connect

    Sexton, F.W.; Fleetwood, D.M.; Shaneyfelt, M.R.; Dodd, P.E.; Hash, G.L.

    1997-06-01

    As integrated circuit densities increase with each new technology generation, both the lateral and vertical dimensions shrink. Operating voltages, however, have not scaled as aggressively as feature size, with a resultant increase in the electric fields within advanced geometry devices. Oxide electric fields are in fact increasing to greater than 5 MV/cm as feature size approaches 0.1 {micro}m. This trend raises the concern that single event gate rupture (SEGR) may limit the scaling of advanced integrated circuits (ICs) for space applications. The dependence of single event gate rupture (SEGR) critical field on oxide thickness is examined for thin gate oxides. Critical field for SEGR increases with decreasing oxide thickness, consistent with an increasing intrinsic breakdown field.

  14. Review paper: Transparent amorphous oxide semiconductor thin film transistor

    NASA Astrophysics Data System (ADS)

    Kwon, Jang-Yeon; Lee, Do-Joong; Kim, Ki-Bum

    2011-03-01

    Thin film transistors (TFTs) with oxide semiconductors have drawn great attention in the last few years, especially for large area electronic applications, such as high resolution active matrix liquid crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs), because of their high electron mobility and spatial uniform property. This paper reviews and summarizes recent emerging reports that include potential applications, oxide semiconductor materials, and the impact of the fabrication process on electrical performance. We also address the stability behavior of such devices under bias/illumination stress and critical factors related to reliability, such as the gate insulator, the ambient and the device structure.

  15. Vanadium oxide thin film with improved sheet resistance uniformity

    NASA Astrophysics Data System (ADS)

    Généreux, Francis; Provençal, Francis; Tremblay, Bruno; Boucher, Marc-André; Julien, Christian; Alain, Christine

    2014-06-01

    This paper reports on the deposition of vanadium oxide thin films with sheet resistance uniformity better than 2.5% over a 150 mm wafer. The resistance uniformity within the array is estimated to be less than 1%, which is comparable with the value reported for amorphous silicon-based microbolometer arrays. In addition, this paper also shows that the resistivity of vanadium oxide, like amorphous silicon, can be modeled by Arrhenius' equation. This result is expected to significantly ease the computation of the correction table required for TEC-less operation of VOx-based microbolometer arrays.

  16. Growth control of the oxidation state in vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Egami, Takeshi; Lee, Ho Nyung

    2014-12-01

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V2 + 3 O 3 , V + 4 O 2 , and V2 + 5 O 5 . A well pronounced MIT was only observed in VO2 films grown in a very narrow range of oxygen partial pressure P(O2). The films grown either in lower (<10 mTorr) or higher P(O2) (>25 mTorr) result in V2O3 and V2O5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

  17. Growth control of the oxidation state in vanadium oxide thin films

    SciTech Connect

    Lee, Shinbuhm; Meyer, Tricia L.; Lee, Ho Nyung; Park, Sungkyun; Egami, Takeshi

    2014-12-01

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V{sub 2}{sup +3}O{sub 3}, V{sup +4}O{sub 2}, and V{sub 2}{sup +5}O{sub 5}. A well pronounced MIT was only observed in VO{sub 2} films grown in a very narrow range of oxygen partial pressure P(O{sub 2}). The films grown either in lower (<10 mTorr) or higher P(O{sub 2}) (>25 mTorr) result in V{sub 2}O{sub 3} and V{sub 2}O{sub 5} phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO{sub 2} thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

  18. Growth control of the oxidation state in vanadium oxide thin films

    SciTech Connect

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Lee, Ho Nyung

    2014-12-05

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.

  19. Growth control of the oxidation state in vanadium oxide thin films

    DOE PAGES

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; ...

    2014-12-05

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase puremore » epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.« less

  20. Nanostructured thin solid oxide fuel cells with high power density.

    PubMed

    Ignatiev, Alex; Chen, Xin; Wu, Naijuan; Lu, Zigui; Smith, Laverne

    2008-10-28

    Nanostructured thin film solid oxide fuel cells (SOFC) have been developed for reduced temperature operation, with high power density, and to be self reforming. A thin film electrolyte (1-2 microm thickness), e.g., yttria-stabilized zirconia (YSZ), is deposited on a nickel foil substrate. The electrolyte thin film is polycrystalline when deposited on a polycrystalline nickel foil substrate, and is (100) textured when deposited on an atomically textured nickel foil substrate. The Ni foil substrate is then converted into a porous SOFC anode by photolithographic patterning and etching to develop porosity. A composite La(0.5)Sr(0.5)CoO(3) cathode is then deposited on the thin film electrolyte. The resultant thin film hetero structure fuel cells have operated at a significantly reduced temperature: as low as 470 degrees C, with a maximum power density of 140 mW cm(-2) at 575 degrees C, and an efficiency of >50%. This drastic reduction in operating temperature for an SOFC now also allows for the use of hydrocarbon fuels without the need for a separate reformer as the nickel anode effectively dissociates hydrocarbons within this temperature range. These nanostructured fuel cells show excellent potential for high power density, small volume, high efficiency fuel cells for power generation applications.

  1. Electrical properties of vanadium tungsten oxide thin films

    SciTech Connect

    Nam, Sung-Pill; Noh, Hyun-Ji; Lee, Sung-Gap; Lee, Young-Hie

    2010-03-15

    The vanadium tungsten oxide thin films deposited on Pt/Ti/SiO{sub 2}/Si substrates by RF sputtering exhibited good TCR and dielectric properties. The dependence of crystallization and electrical properties are related to the grain size of V{sub 1.85}W{sub 0.15}O{sub 5} thin films with different annealing temperatures. It was found that the dielectric properties and TCR properties of V{sub 1.85}W{sub 0.15}O{sub 5} thin films were strongly dependent upon the annealing temperature. The dielectric constants of the V{sub 1.85}W{sub 0.15}O{sub 5} thin films annealed at 400 {sup o}C were 44, with a dielectric loss of 0.83%. The TCR values of the V{sub 1.85}W{sub 0.15}O{sub 5} thin films annealed at 400 {sup o}C were about -3.45%/K.

  2. Oxidation Temperature Effects on ZnO Thin Films Prepared from Zn Thin Films on Quartz Substrates.

    PubMed

    Park, Seonhee; Kim, Younggyu; Leem, Jae-Young

    2015-11-01

    We investigated the structural and optical properties of the ZnO thin films formed by oxidation of Zn thin films. Zn thin films were deposited by thermal evaporation and were then annealed from 300 to 800 degrees C to prepare ZnO thin films. We found that ZnO thin films were formed by thermal oxidation of Zn thin films at oxidation temperatures over 400 degrees C. The grain size of ZnO thin films increased with the oxidation temperature and the highest ZnO (002) intensity was obtained at 600 degrees C. In the PL spectra, the intensity of the near-band-edge peak increased with the oxidation temperatures until 400 degrees C. However, these values gradually decreased with a further increase in the oxidation temperatures over 400 degrees C. The transmittance of the ZnO thin films was more than 90% for the visible wavelength region, and the optical band gap was red-shifted with increase in the oxidation temperature.

  3. The synthesis and characterization of multifunctional oxide thin films

    NASA Astrophysics Data System (ADS)

    Kharel, Parashu Ram

    2008-10-01

    Multifunctional materials offer a number of very interesting properties for developing new generation novel devices. Motivated by this fact, we concentrated our research efforts on investigating two different class of multifunctional materials namely: Diluted Magnetic Semiconducting Oxides (DMSO) and Multiferroic Oxides. The primary goal of this study was to determine how to resolve the controversy concerning the origin of room temperature ferromagnetic order in DMSO and to demonstrate the theoretically predicted coupling between ferroelectric and magnetic order parameters in multiferroic oxides. We chose several materials of current interest such as TiO2, ZnOand In2O3 (DMSO) and Ni3V2O8 and BiFeO 3 (multiferroic oxides) as the experimental specimens. We synthesized thin film samples of these materials using metal organic decomposition by spin coating and RF magnetron sputtering techniques. We succeeded in growing single phase polycrystalline thin films using both of the techniques with the sputter deposited samples showing highly preferred orientations. We did not observe any secondary phases and accidental impurities leading to robust ferromagnetic order in our samples within the detection limit of XRD, Raman spectroscopy and TEM. We have demonstrated that the lattice defects such as oxygen vacancies and cation vacancies play crucial role in the development of ferromagnetic order in DMSO materials. Based on the investigation carried out on TiO 2, ZnO and In2O3, we conclude that ferromagnetism can be developed in oxygen deficient DMSO thin films without the subbstitution of any external magnetic impurities but the incorporation of magnetic impurities may help in stabilizing the observed ferromagnetic order. Most importantly, we demonstrated with the direct measurement of spin polarization in In 2O3 and Cr doped In2O3 thin films that the charge carriers responsible for the ferromagnetic order are spin polarized. We have successfully demonstrated that the low

  4. Amorphous nickel incorporated tin oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Yang, Jianwen; Ren, Jinhua; Lin, Dong; Han, Yanbing; Qu, Mingyue; Pi, Shubin; Fu, Ruofan; Zhang, Qun

    2017-09-01

    Nickel as a dopant has been proposed to suppress excess carrier concentration in n-type tin oxide based thin film transistors (TFTs). The influences of Ni content on nickel doped tin oxide (TNO) thin films and their corresponding TFTs were investigated with experimental results showing that the TNO thin films are amorphous. Through the comparison of the transfer characteristic curves of the TNO TFTs with different Ni contents, it was observed that Ni doping is useful to improve the performance of SnO2-based TFTs by suppressing the off-state current and shifting the threshold voltage to 0 V. The amorphous TNO TFT with 3.3 at.% Ni content shows optimum performance, with field effect mobility of 8.4 cm2 V-1 s-1, saturation mobility of 6.8 cm2 V-1 s-1, subthreshold swing value of 0.8 V/decade, and an on-off current ratio of 2.1  ×  107. Nevertheless, the bias stress stability of SnO2-based TFTs deteriorate.

  5. Work function recovery of air exposed molybdenum oxide thin films

    NASA Astrophysics Data System (ADS)

    Irfan, Irfan; James Turinske, Alexander; Bao, Zhenan; Gao, Yongli

    2012-08-01

    We report substantial work function (WF) recovery of air exposed molybdenum oxide thin films with vacuum annealing. We observed a sharp reduction in the MoOx WF (from 6.8 eV to 5.6 eV) as well as a very thin layer of oxygen rich adsorbate on the MoOx film after an hour of air exposure. The WF of the exposed MoOx film started to gradually recover with increasing annealing temperature in vacuum, and the saturation in the WF recovery was observed at 450 °C with WF ˜6.4 eV. We further studied the interface formation between the annealed MoOx and copper phthalocyanine (CuPc). The highest occupied molecular orbital (HOMO) level of CuPc was observed to be almost pinned to the Fermi level, strongly suggesting the possibility of efficient hole injection with the vacuum annealed MoOx film.

  6. High angular sensitivity thin film tin oxide sensor

    NASA Astrophysics Data System (ADS)

    Kaur, Davinder; Madaan, Divya; Sharma, V. K.; Kapoor, A.

    2016-05-01

    We present theoretical anlaysis of a thin film SnO2 (Tin Oxide) sensor for the measurement of variation in the refractive index of the bulk media. It is based on lossy mode resonance between the absorbing thin film lossy modes and the evanescent wave. Also the addition of low index dielectric matching layer between the prism and the lossy waveguiding layer future increase the angular sensitivity and produce an efficient refractive index sensor. The angular interrogation is done and obtained sensitivity is 110 degree/RIU. Theoretical analysis of the proposed sensor based on Fresnel reflection coefficients is presented. This enhanced sensitivity will further improve the monitoring of biomolecular interactions and the higher sensitivity of the proposed configurations makes it to be a much better option to be employed for biosensing applications.

  7. Luminescent sulfides and solution-deposited oxide thin films

    NASA Astrophysics Data System (ADS)

    Anderson, Jeremy T.

    Solid state luminescent sulfides are prepared as powders in order to elucidate the relationship between structure and light emission. While the sulfides studied in this dissertation are known phosphors, materials are investigated in a variety of new ways. Elementary properties and structures of MgS are reviewed, and preparation of MgS is described with sufficient detail that it may be reproduced in laboratories worldwide. Luminescence of MgS:Eu is evaluated, primarily by interpretation of published work. Solid pellets of MgS:Eu are created for the purpose of depositing thin-film layers by physical vapor deposition, and incorporating the phosphor layer within ACTFEL structures. Fabricated devices are found to exhibit bright ACTFEL luminescence--the brightest known for MgS. Similarly, MgS films are doped with a variety of lanthanide atoms to investigate the hot-electron distribution in MgS layers during device operation. The system BaGa2S4--SrGa 2S4 is evaluated for mutual solid phase solubility. Addition of Eu2+ causes each of these phases to photoluminescence. The emission energies (and therefore colors) are adjusted according to composition. Thin-film oxides are deposited from solution sources. Solution-deposited ZnO serves as the semiconductor layer in transparent thin-film transistor devices. A new class of dielectric material is also developed by solution methods. HafSOx and ZircSOx films, and derivative compositions, are evaluated in simple capacitor structures and demonstrated in functioning transistor devices. High-resolution nanolaminate structures are also constructed from this class of materials. From the knowledge and experience of developing oxide thin-films, more general chemical strategies are expressed.

  8. Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties.

    PubMed

    Dey, Arjun; Nayak, Manish Kumar; Esther, A Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A K; Bera, Parthasarathi; Barshilia, Harish C; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D Raghavendra; Sridhara, N; Sharma, Anand Kumar

    2016-11-17

    Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10(-5) mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

  9. Isothermal thermogravimetric analysis of soybean oil oxidation correlated to thin film micro-oxidation test methods

    USDA-ARS?s Scientific Manuscript database

    A method of correlation between the Thin Film Micro-Oxidation (TFMO) test with isothermal thermogravimetric analysis is reported utilizing a soybean oil system. Utilizing a kinetic model, pseudo-rate constants and “activation energy” can be calculated from weight loss data. This model accounts for o...

  10. Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

    PubMed Central

    Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

    2016-01-01

    Vanadium oxide-molybdenum oxide (VO-MO) thin (21–475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45–50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10−5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films. PMID:27853234

  11. Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

    NASA Astrophysics Data System (ADS)

    Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

    2016-11-01

    Vanadium oxide-molybdenum oxide (VO-MO) thin (21–475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45–50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10‑5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

  12. Crystal Structure Characterization of Thin Layer Zinc Oxide

    NASA Astrophysics Data System (ADS)

    Doyan, Aris; Susilawati; Azizatul Fitri, Siti; Ahzan, Sukainil

    2017-05-01

    In this research the characterization of the crystal structure of a thin layer of ZnO (zinc oxide) were synthesized by sol - gel method and spin coating deposited on a glass substrate. The samples were divided into three sol concentrations of 0.1, 0.3, 0.5 Molar and two deposition temperature is 350 °C, and 550 °C. UV-Vis. spectrophotometer results showed that in the spectrum of visible light (wavelength range 300-800 nm) has a transmittance value of which increases with increasing concentration and temperature deposition of zinc oxide, otherwise the value of the absorption and the band gap energy decreases with the addition of concentration and deposition temperature. The transmittances value of the highest and lowest absorption was 93.5% and 0.03 is at a concentration of 0.1 M and zinc oxide deposition temperature of 550 °C, with a value of band gap energy of 2.98 eV. The XRD results showed that the zinc oxide crystal orientation in the field of 013 with a crystal grain size 14.4472 nm. SEM results showed the surface morphology of zinc oxide such as rod-like.

  13. Improved Charge Transfer by Thin Metal Oxide Films

    NASA Astrophysics Data System (ADS)

    Irfan

    The field of electronics has an immense impact on our day to day life. Efficient charge transfer at the semiconductor and electrode interface is one of the most crucial issues for the performance of any electronic device. A lot of effort has been spent to address this issue. A counter intuitive phenomenon of insertion of a thin metal oxide film at the semiconductor and electrode interface has gained momentum recently. In the current thesis, based on results of several experiments, I will propose a prominent mechanism of performance improvement with such insertions. I will also demonstrate the applicability of such metal oxide thin films in many other systems. First, I will introduce the scope of the thesis in detail. I will also introduce the background to understand the electronic structure of organic semiconductors, along with the interface formation at the semiconductor/metal interface. Then, I will discuss the measurement techniques. I will start the discussion on results with the insertion of a thin layer of MoOx (a transition metal oxide) between indium tin oxide (ITO) and two well studied organic semiconductors. I will also demonstrate that the optimum insertion layer thickness is just a few nanometers. I will illustrate the importance of high vacuum during the deposition of such insertion layers. I will also discuss the method to recover work function of air exposed MoOx films. I will further demonstrate that a thin layer of MoOx can be utilized to dope C60 strongly p-type. Then, I will discuss the application of MoO x insertion layer in CdTe based solar cells. I will further show the application of MoOx and organic double-inter-layer in organic devices. At the end, I will discuss an intense oxygen plasma treatment on ITO films and demonstrate a method to achieve high work function ITO films. The mechanism of high work function and application in devices will also be explained in detail. Finally, I will summarize the thesis.

  14. Cobalt vanadium oxide thin nanoplates: primary electrochemical capacitor application

    PubMed Central

    Zhang, Youjuan; Liu, Yuanying; Chen, Jing; Guo, Qifei; Wang, Ting; Pang, Huan

    2014-01-01

    Co3V2O8 thin nanoplates are firstly described as a kind of electrode material for supercapacitors. More importantly, from electrochemical measurements, the obtained Co3V2O8 nanoplate electrode shows a good specific capacitance (0.5 A g−1, 739 F g−1) and cycling stability (704 F g−1 retained after 2000 cycles). This study essentially offers a new kind of metal vanadium oxides as electrochemical active material for the development of supercapacitors. PMID:25023373

  15. Modelling the structure of disordered cerium oxide thin films

    NASA Astrophysics Data System (ADS)

    Peña Leal, José Juan; Barrio, Rafael A.

    2017-10-01

    Cerium oxide is an interesting mixed valence compound of great technological importance. We model the growth of thin films of this substance by describing the statistical nucleation of atomic units containing Ce3+ and Ce4+. The theoretical results are compared with available experimental values of the magnetic susceptibility of the material, which is related to the proportion of magnetic atoms in the solid. The model is able to predict the composition of the final solid under different preparation conditions, namely the oxygen content of the precursor and the temperature of the substrate.

  16. Ultra-thin solid oxide fuel cells: Materials and devices

    NASA Astrophysics Data System (ADS)

    Kerman, Kian

    Solid oxide fuel cells are electrochemical energy conversion devices utilizing solid electrolytes transporting O2- that typically operate in the 800 -- 1000 °C temperature range due to the large activation barrier for ionic transport. Reducing electrolyte thickness or increasing ionic conductivity can enable lower temperature operation for both stationary and portable applications. This thesis is focused on the fabrication of free standing ultrathin (<100 nm) oxide membranes of prototypical O 2- conducting electrolytes, namely Y2O3-doped ZrO2 and Gd2O3-doped CeO2. Fabrication of such membranes requires an understanding of thin plate mechanics coupled with controllable thin film deposition processes. Integration of free standing membranes into proof-of-concept fuel cell devices necessitates ideal electrode assemblies as well as creative processing schemes to experimentally test devices in a high temperature dual environment chamber. We present a simple elastic model to determine stable buckling configurations for free standing oxide membranes. This guides the experimental methodology for Y 2O3-doped ZrO2 film processing, which enables tunable internal stress in the films. Using these criteria, we fabricate robust Y2O3-doped ZrO2 membranes on Si and composite polymeric substrates by semiconductor and micro-machining processes, respectively. Fuel cell devices integrating these membranes with metallic electrodes are demonstrated to operate in the 300 -- 500 °C range, exhibiting record performance at such temperatures. A model combining physical transport of electronic carriers in an insulating film and electrochemical aspects of transport is developed to determine the limits of performance enhancement expected via electrolyte thickness reduction. Free standing oxide heterostructures, i.e. electrolyte membrane and oxide electrodes, are demonstrated. Lastly, using Y2O3-doped ZrO2 and Gd2O 3-doped CeO2, novel electrolyte fabrication schemes are explored to develop oxide

  17. Enhanced electrochromism in cerium doped molybdenum oxide thin films

    SciTech Connect

    Dhanasankar, M.; Purushothaman, K.K.; Muralidharan, G.

    2010-12-15

    Cerium (5-15% by weight) doped molybdenum oxide thin films have been prepared on FTO coated glass substrate at 250 {sup o}C using sol-gel dip coating method. The structural and morphological changes were observed with the help of XRD, SEM and EDS analysis. The amorphous structure of the Ce doped samples, favours easy intercalation and deintercalation processes. Mo oxide films with 10 wt.% of Ce exhibit maximum anodic diffusion coefficient of 24.99 x 10{sup -11} cm{sup 2}/s and the change in optical transmittance of ({Delta}T at 550 nm) of 79.28% between coloured and bleached state with the optical density of ({Delta}OD) 1.15.

  18. Thin water film formation on metal oxide crystal surfaces.

    PubMed

    Gilbert, Benjamin; Katz, Jordan E; Rude, Bruce; Glover, T E; Hertlein, Marcus P; Kurz, Charles; Zhang, Xiaoyi

    2012-10-09

    Reactions taking place at hydrated metal oxide surfaces are of considerable environmental and technological importance. Surface-sensitive X-ray methods can provide structural and chemical information on stable interfacial species, but it is challenging to perform in situ studies of reaction kinetics in the presence of water. We have implemented a new approach to creating a micrometer-scale water film on a metal oxide surface by combining liquid and gas jets on a spinning crystal. The water films are stable indefinitely and sufficiently thin to allow grazing incidence X-ray reflectivity and spectroscopy measurements. The approach will enable studies of a wide range of surface reactions and is compatible with interfacial optical-pump/X-ray-probe studies.

  19. High Transparent Conductive Aluminum-Doped Zinc Oxide Thin Films by Reactive Co-Sputtering (Postprint)

    DTIC Science & Technology

    2016-03-30

    AFRL-RX-WP-JA-2017-0144 HIGH TRANSPARENT CONDUCTIVE ALUMINUM - DOPED ZINC OXIDE THIN FILMS BY REACTIVE CO- SPUTTERING (POSTPRINT...TRANSPARENT CONDUCTIVE ALUMINUM -DOPED ZINC OXIDE THIN FILMS BY REACTIVE CO-SPUTTERING (POSTPRINT) 5a. CONTRACT NUMBER FA8650-16-D-5402-0001 5b. GRANT...ANSI Std. Z39-18 TD.11.pdf Optical Interference Coatings (OIC) 2016 © OSA 2016 1 High Transparent Conductive Aluminum -doped Zinc Oxide Thin

  20. Oxidation Effect in Octahedral Hafnium Disulfide Thin Film.

    PubMed

    Chae, Sang Hoon; Jin, Youngjo; Kim, Tae Soo; Chung, Dong Seob; Na, Hyunyeong; Nam, Honggi; Kim, Hyun; Perello, David J; Jeong, Hye Yun; Ly, Thuc Hue; Lee, Young Hee

    2016-01-26

    Atomically smooth van der Waals materials are structurally stable in a monolayer and a few layers but are susceptible to oxygen-rich environments. In particular, recently emerging materials such as black phosphorus and perovskite have revealed stronger environmental sensitivity than other two-dimensional layered materials, often obscuring the interesting intrinsic electronic and optical properties. Unleashing the true potential of these materials requires oxidation-free sample preparation that protects thin flakes from air exposure. Here, we fabricated few-layer hafnium disulfide (HfS2) field effect transistors (FETs) using an integrated vacuum cluster system and study their electronic properties and stability under ambient conditions. By performing all the device fabrication and characterization procedure under an oxygen- and moisture-free environment, we found that few-layer AA-stacking HfS2-FETs display excellent field effect responses (Ion/Ioff ≈ 10(7)) with reduced hysteresis compared to the FETs prepared under ambient conditions. Oxidation of HfS2 occurs uniformly over the entire area, increasing the film thickness by 250% at a prolonged oxidation time of >120 h, while defects on the surface are the preferential initial oxidation sites. We further demonstrated that the stability of the device in air is significantly improved by passivating FETs with BN in a vacuum cluster.

  1. Synthesis and Oxidation Resistance of h-BN Thin Films

    NASA Astrophysics Data System (ADS)

    Stewart, David; Meulenberg, Robert; Lad, Robert

    Hexagonal boron nitride (h-BN) is an exciting 2D material for use in sensors and other electronic devices that operate in harsh, high temperature environments. Not only is h-BN a wide band gap material with excellent wear resistance and high temperature stability, but recent reports indicate that h-BN can prevent metallic substrates from oxidizing above 600°C in low O2 pressures. However, the PVD of highly crystalline h-BN films required for this oxidation protection has proven challenging. In this work, we have explored the growth of h-BN thin films by reactive RF magnetron sputtering from an elemental B target in an Ar/N2 atmosphere. The film growth rate is extremely slow and the resulting films are atomically smooth and homogeneous. Using DC biasing during deposition and high temperature annealing treatments, the degree of film crystallinity can be controlled. The oxidation resistance of h-BN films deposited on inert sapphire and reactive metal substrates such as Zr and ZrB2 has been examined by techniques such as XPS, XRD, and SEM after oxidation between 600 and 1200°C under varying oxygen pressures. The success of h-BN as a passivation layer for metallic substrates in harsh environments is shown to depend greatly on its crystalline quality and defects. Supported by the NSF SusChEM program.

  2. Oxidation kinetics of YBa 2Cu 3O 7-γ thin films in different oxidizing ambients

    NASA Astrophysics Data System (ADS)

    Gupta, Arunava

    1993-02-01

    The effectiveness of different oxidizer gases (O, O 2, N 2O and NO 2) for the post-growth oxidation of YBa 2Cu 3O 7-γ (YBCO) thin films is investigated. In particular, the oxidation process in the presence of atomic and molecular oxygen is analyzed based on a simple kinetic model involving oxygen adsorption, desorption, and interface transfer steps. It is argued that the high oxidation capability of atomic O is a result of its direct adsorption with very high sticking probability. As a result, the thermodynamic stability range of YBCO at a particular temperature is shifted to significantly lower pressures in an atomic O plasma. On the basis of the known surface decomposition characteristics of N 2O and NO 2, the possible oxidation behavior of YBCO films in the presence of these gases is also discussed.

  3. Strain-induced phenomenon in complex oxide thin films

    NASA Astrophysics Data System (ADS)

    Haislmaier, Ryan

    Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of

  4. Physical investigation of electrophoretically deposited graphene oxide and reduced graphene oxide thin films

    NASA Astrophysics Data System (ADS)

    Politano, Grazia Giuseppina; Versace, Carlo; Vena, Carlo; Castriota, Marco; Ciuchi, Federica; Fasanella, Angela; Desiderio, Giovanni; Cazzanelli, Enzo

    2016-11-01

    Graphene oxide and reduced graphene oxide thin films are very promising materials because they can be used in optoelectronic devices and in a growing range of applications such as touch screens and flexible displays. In this work, graphene oxide (GO) and thermally reduced graphene oxide (rGO) thin films, deposited on Ti/glass substrates, have been obtained by electrophoretic deposition. The morphological and the structural properties of the samples have been investigated by micro-Raman technique, X-ray reflectometry, and SEM analysis. In order to study the optical and electrical properties, variable angle spectroscopic ellipsometry and impedance analysis have been performed. The thermal annealing changes strongly the structural, electrical, and optical properties, because during the thermal processes some amount of sp3 bonds originally present in GO were removed. In particular, the annealing enhances the Ohmic behavior of the rGO film increasing its conductivity and the estimated optical density. Moreover, using electrophoretic deposition, we have found a higher value of optical density for GO thin films, not observed in GO films obtained with other deposition methods.

  5. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    DOEpatents

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  6. The structure of nickel and indium oxide thin films from EXAFS data

    NASA Astrophysics Data System (ADS)

    Bets, V.; Zamozdiks, T.; Lusis, A.; Purans, J.; Bausk, N.; Sheromov, M.

    1987-11-01

    The structure of nickel oxide and indium oxide doped by tin films prepared by reactive magnetron sputtering has been studied by the EXAFS method. It has been found that the nickel oxide thin film has a microcrystalline structure with significant disorder proved by the increase of the Debye-Waller factor and the sharp decrease of peak amplitudes. The indium oxide thin film has a noticeable structural disorder due to 8% tin dopping.

  7. Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Marrs, Michael

    A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

  8. Tungsten oxide thin films: detection and trapping of hazardous gases

    NASA Astrophysics Data System (ADS)

    Godbole, Rhushikesh; Vedpathak, Amol; Godbole, Vijay; Bhagwat, Sunita

    2017-07-01

    Synthesis of tungsten (W) and tungsten tri-oxide (WO3) thin films on alumina substrate by a peculiar Red-ox reaction route using hot-filament chemical vapor deposition technique is described. The resulting tungsten and tungsten oxide films were characterized using various techniques such as x-ray diffraction (XRD), Raman spectroscopy and Scanning electron microscopy (SEM). XRD results revealed the complete conversion of cubic phase of pure tungsten into monoclinic phase of tungsten oxide. Raman spectroscopic analysis also confirmed the formation of WO3. SEM images show considerable alteration in morphology from well faceted particles to wafers when pure W-film was converted to WO3 film. The wafer like morphology of WO3 films is found to be suitable for gas sensing towards hazardous gases such as NO2 and NH3. The WO3 films showcased their highly responsive nature towards NO2 gas with exceptionally high gas sensitivity ~32. WO3 film demonstrated longer recovery time towards NO2 gas unlike NH3 gas making them attractive for their utilization in ‘Newer application’ such as a catalyst support material in catalytic converter devices which are potential representatives to arrest pollutant gases (NO2) getting flown into the living environment.

  9. Photocatalytic degradation of triethylamine on titanium oxide thin films

    SciTech Connect

    Huang, A.; Cao, L.; Chen, J.; Spiess, F.J.; Suib, S.L.; Obee, T.N.; Hay, S.O.; Freihaut, J.D.

    1999-11-15

    Photooxidation of triethylamine (TEA) in the presence of O{sub 2}, N{sub 2}, and H{sub 2}O over titanium oxide (TiO{sub 2}) was investigated using a flat plate reactor. TEA was photocatalytically oxidized to CO{sub 2} and some by-products on TiO{sub 2} thin film catalysts. The intrinsic oxidation rate of the reaction was determined and was dependent on TEA concentration, humidity level, and light intensity. Photocatalytic deactivation was observed in these reactions. Fourier transform infrared (FTIR) and temperature-programmed desorption with a mass spectrometer as a detector (TPD-MS) were used to characterize the surface of the catalyst and study the deactivation mechanism. FTIR and TPD-MS results suggest that accumulation of carboxylic acid species, -N-N=O, and some other accumulation of carboxylic acid species, -N-N=O, and some other carbonaceous species occurred during the reaction. These by-product species or intermediates were chemisorbed on the catalyst surface. They were stable under reaction conditions and might be responsible for deactivation of TiO{sub 2} by either poisoning the active sites directly or blocking the adsorption of TEA on the catalyst surface.

  10. Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors

    SciTech Connect

    Gao, Xu E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya; Mitoma, Nobuhiko; Lin, Meng-Fang; Kizu, Takio; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Nabatame, Toshihide

    2014-07-14

    Oxide thin film transistor employing copper source/drain electrodes shows a small turn on voltage and reduced hysteresis. Cross-sectional high-resolution transmission electron microscopy image confirmed the formation of ∼4 nm CuO{sub x} related interlayer. The lower bond-dissociation energy of Cu-O compared to Si-O and In-O suggests that the interlayer was formed by adsorbing oxygen molecules from surrounding environment instead of getting oxygen atoms from the semiconductor film. The formation of CuO{sub x} interlayer acting as an acceptor could suppress the carrier concentration in the transistor channel, which would be utilized to control the turn on voltage shifts in oxide thin film transistors.

  11. Properties of mixed molybdenum oxide iridium oxide thin films synthesized by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Patil, P. S.; Kawar, R. K.; Sadale, S. B.; Inamdar, A. I.; Deshmukh, H. P.

    2006-09-01

    Molybdenum-doped iridium oxide thin films have been deposited onto corning glass- and fluorine-doped tin oxide coated corning glass substrates at 350 °C by using a pneumatic spray pyrolysis technique. An aqueous solution of 0.01 M ammonium molybdate was mixed with 0.01 M iridium trichloride solution in different volume proportions and the resultant solution was used as a precursor solution for spraying. The as-deposited samples were annealed at 600 °C in air medium for 1 h. The structural, electrical and optical properties of as-deposited and annealed Mo-doped iridium oxide were studied and values of room temperature electrical resistivity, and thermoelectric power were estimated. The as-deposited samples with 2% Mo doping exhibit more pronounced electrochromism than other samples, including pristine Ir oxide.

  12. Sputter-deposited low reflectance vanadium oxide-molybdenum oxide thin films on silicon

    NASA Astrophysics Data System (ADS)

    Nayak, Manish Kumar; Esther, A. Carmel Mary; Bera, Parthasarathi; Dey, Arjun

    2017-09-01

    A single layer antireflective, smart, crystalline and nanocolumnar pulsed RF magnetron sputtered vanadium oxide-molybdenum oxide thin film on silicon is proposed for the alternate antireflective material for silicon based futuristic solar cell application. The VO-MO film with 130 nm thickness grown at 200 W shows significant low reflectance (1% within the 500-600 nm region). The VO-MO film with lowest reflectance shows a phase transition at around 55 °C which is beneficial due to film inherent variable IR emittance behaviour which may be helpful for eliminating excess heat load generated during in-service of silicon solar cell.

  13. Visible light-induced photocatalytic reduction of graphene oxide by tungsten oxide thin films

    NASA Astrophysics Data System (ADS)

    Choobtashani, M.; Akhavan, O.

    2013-07-01

    Tungsten oxide thin films (deposited by thermal evaporation or sol gel method) were used for photocatalytic reduction of graphene oxide (GO) platelets (synthesized through a chemical exfoliation method) on surface of the films under UV or visible light of the environment, in the absence of any aqueous ambient at room temperature. Atomic force microscopy (AFM) technique was employed to characterize surface morphology of the GO sheets and the tungsten oxide films. Moreover, using X-ray photoelectron spectroscopy (XPS), chemical state of the tungsten oxide films and the photocatalytic reduction of the GO platelets were quantitatively investigated. The better performance of the sol-gel tungsten oxide films in photocatalytic reduction of GO platelets as compared to the evaporated tungsten oxide films was assigned to lower W5+/W6+ ratio (i.e., a better stoichiometry) and higher surface water content of the sol-gel film. The GO reduction level achieved after 24 h UV-assisted photocatalytic reduction on surface of the sol-gel tungsten oxide film was comparable with the reduction level usually obtainable by hydrazine. The sol-gel tungsten oxide film even showed an efficient photocatalytic reduction of the GO platelets after exposure to the visible light of the environment for 2 days.

  14. Metal oxide semiconductor thin-film transistors for flexible electronics

    SciTech Connect

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard; Münzenrieder, Niko; Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D.

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  15. Metal oxide semiconductor thin-film transistors for flexible electronics

    NASA Astrophysics Data System (ADS)

    Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

    2016-06-01

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  16. Surfactant assisted Au nanoparticle layering in titanium oxide thin films

    NASA Astrophysics Data System (ADS)

    Mukherjee, Smita; Das, Pradip Shekhar; Choudhuri, Madhumita; Datta, Alokmay; Ghosh, Jiten; Mukhopadhyay, Anoop Kr.

    2017-05-01

    Au Nanoparticle (NP) decorated TiO2 thin films, prepared by a unique surfactant assisted 2D self-assembling technique with molecular level control, showed significant decrease in optical band gap as well as enhanced crystallinity compared to its sol-gel prepared pristine counterpart. Spin coated Au NP overlayers on titania in absence of surfactant, on the other hand, had no appreciable effect on either band gap or crystal structure compared to undoped TiO2 films. Apart from exhibiting band gap tuning of TiO2, this cheap, scalable technique of surfactant aided deposition of 2D layers of Au NPs on semiconducting oxides, may be used for development of multilayered structures with promising light harvesting and unidirectional energy transfer (LUET) applications.

  17. Studies on nickel-tungsten oxide thin films

    SciTech Connect

    Usha, K. S.; Sivakumar, R.; Sanjeeviraja, C.

    2014-10-15

    Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup −1} and 1100 cm{sup −1} correspond to Ni-O vibration and the peak at 860 cm{sup −1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.

  18. Melting of thin films of alkanes on magnesium oxide

    NASA Astrophysics Data System (ADS)

    Arnold, T.; Barbour, A.; Chanaa, S.; Cook, R. E.; Fernandez-Canato, D.; Landry, P.; Seydel, T.; Yaron, P.; Larese, J. Z.

    2009-02-01

    Recent incoherent neutron scattering investigations of the dynamics of thin alkane films adsorbed on the Magnesium Oxide (100) surface are reported. There are marked differences in the behaviour of these films, as a function of temperature and coverage, compared to similar measurements on graphite. In particular, it has previously been shown that adsorbed multilayer films on graphite exhibit an interfacial solid monolayer that coexists with bulk-like liquid, well above the bulk melting point. In contrast, these studies show that the alkane films on MgO exhibit no such stabilization of the solid layer closest to the substrate as a function of the film thickness, even though the monolayer crystal structures are remarkably similar. These studies are supported by extensive thermodynamic data, a growing body of structural data from neutron diffraction and state of the art computer modelling

  19. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    DOEpatents

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  20. Highly conductive grain boundaries in copper oxide thin films

    NASA Astrophysics Data System (ADS)

    Deuermeier, Jonas; Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Klein, Andreas; Fortunato, Elvira

    2016-06-01

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu2O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu2O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu2O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  1. Chemical Strain Engineering of Magnetism in Oxide Thin Films.

    PubMed

    Copie, Olivier; Varignon, Julien; Rotella, Hélène; Steciuk, Gwladys; Boullay, Philippe; Pautrat, Alain; David, Adrian; Mercey, Bernard; Ghosez, Philippe; Prellier, Wilfrid

    2017-04-03

    Transition metal oxides having a perovskite structure form a wide and technologically important class of compounds. In these systems, ferroelectric, ferromagnetic, ferroelastic, or even orbital and charge orderings can develop and eventually coexist. These orderings can be tuned by external electric, magnetic, or stress field, and the cross-couplings between them enable important multifunctional properties, such as piezoelectricity, magneto-electricity, or magneto-elasticity. Recently, it has been proposed that additional to typical fields, the chemical potential that controls the concentration of ion vacancies in these systems may reveal an efficient alternative parameter to further tune their properties and achieve new functionalities. In this study, concretizing this proposal, the authors show that the control of the content of oxygen vacancies in perovskite thin films can indeed be used to tune their magnetic properties. Growing PrVO3 thin films epitaxially on an SrTiO3 substrate, the authors reveal a concrete pathway to achieve this effect. The authors demonstrate that monitoring the concentration of oxygen vacancies through the oxygen partial pressure or the growth temperature can produce a substantial macroscopic tensile strain of a few percent. In turn, this strain affects the exchange interactions, producing a nontrivial evolution of Néel temperature in a range of 30 K.

  2. Highly conductive grain boundaries in copper oxide thin films

    SciTech Connect

    Deuermeier, Jonas; Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas; Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  3. F2-Laser-Induced Modification of Aluminum Thin Films into Transparent Aluminum Oxide

    NASA Astrophysics Data System (ADS)

    Okoshi, Masayuki; Iwai, Kazufumi; Nojiri, Hidetoshi; Inoue, Narumi

    2012-12-01

    A vacuum-UV F2 laser of 157 nm wavelength induced strong oxidation of 10-nm-thick Al thin films, forming transparent Al2O3 on silica glass. The laser-induced modification occurred at the surface of Al thin films; consequently, the thickness of the formed Al2O3 thin films increased linearly with increasing number of F2 laser photons. The formation of equivalent-phase Al2O3 thin films was confirmed by X-ray photoelectron spectroscopy. The oxidation reaction in the laser-induced modification of 10-nm-thick Al thin films was slower than that for 20- and 60-nm-thick Al thin films. Morphological changes leading to the crystallization of the Al2O3 thin films were also observed when the thickness of Al thin films increased from 10 to 20 and 60 nm.

  4. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    SciTech Connect

    Ge, Jisheng

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  5. Laser patterning of very thin indium tin oxide thin films on PET substrates

    NASA Astrophysics Data System (ADS)

    McDonnell, C.; Milne, D.; Prieto, C.; Chan, H.; Rostohar, D.; O'Connor, G. M.

    2015-12-01

    This work investigates the film removal properties of 30 nm thick Indium Tin Oxide (ITO) thin films, on flexible polyethylene terephthalate (PET) substrates, using 355, 532 and 1064 nm nanosecond pulses (ns), and 343 and 1064 nm femtosecond pulses. The ablation threshold was found to be dependent on the applied wavelength and pulse duration. The surface topography of the laser induced features were examined using atomic force microscopy across the range of wavelengths and pulse durations. The peak temperature, strain and stress tensors were examined in the film and substrate during laser heating, using finite element computational methods. Selective removal of the thin ITO film from the polymer substrate is possible at all wavelengths except at 266 nm, were damage to substrate is observed. The damage to the substrate results in periodic surface structures (LIPPS) on the exposed PET, with a period of twice the incident wavelength. Fragmented crater edges are observed at all nanosecond pulse durations. Film removal using 1030 nm femtosecond pulses results in clean crater edges, however, minor 5 nm damage to the substrate is also observed. The key results show that film removal for ITO on PET, is through film de-lamination across all wavelengths and pulse durations. Film de-lamination occurs due to thermo-elastic stress at the film substrate interface region, as the polymer substrate expands under heating from direct laser absorption and heat conduction across the film substrate interface.

  6. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    SciTech Connect

    El-Atab, Nazek; Rizk, Ayman; Nayfeh, Ammar; Okyay, Ali K.

    2013-11-15

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO{sub 2} layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V{sub t}) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V{sub t} shift, the memory with CrO{sub 2} layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO{sub 2} layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  7. Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope

    NASA Technical Reports Server (NTRS)

    Heinemann, K.; Rao, D. B.; Douglass, D. L.

    1975-01-01

    Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

  8. Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope

    NASA Technical Reports Server (NTRS)

    Heinemann, K.; Rao, D. B.; Douglass, D. L.

    1975-01-01

    Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

  9. Thin film synthesis of novel electrode materials for solid-oxide fuel cells

    SciTech Connect

    Jankowski, A.F.; Morse, J.D.

    1997-12-01

    Electrode materials for solid-oxide fuel cells are developed using sputter deposition. A thin film anode is formed by co-deposition of nickel and yttria-stabilized zirconia. This approach is suitable for composition grading and the provision of a mixed-conducting interracial layer to the electrolyte layer. Similarly, synthesis of a thin film cathode proceeds by co-deposition of silver and yttria- stabilized zirconia. The sputter deposition of a thin film solid- oxide fuel cell is next demonstrated. The thin film fuel cell microstructure is examined using scanning electron microscopy whereas the cell performance is characterized through current-voltage measurement and corresponding impedance spectroscopy.

  10. Nickel oxide and molybdenum oxide thin films for infrared imaging prepared by biased target ion-beam deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yao; Saint John, David; Jackson, Tom N.; Horn, Mark W.

    2014-06-01

    Vanadium oxide (VOx) thin films have been intensively used as sensing materials for microbolometers. VOx thin films have good bolometric properties such as low resistivity, high negative temperature coefficient of resistivity (TCR) and low 1/f noise. However, the processing controllability of VOx fabrication is difficult due to the multiple valence states of vanadium. In this study, metal oxides such as nickel oxide (NiOx) and molybdenum oxide (MoOx) thin films have been investigated as possible new microbolometer sensing materials with improved process controllability. Nickel oxide and molybdenum oxide thin films were prepared by reactive sputtering of nickel and molybdenum metal targets in a biased target ion beam deposition tool. In this deposition system, the Ar+ ion energy (typically lower than 25 eV) and the target bias voltage can be independently controlled since ions are remotely generated. A residual gas analyzer (RGA) is used to precisely control the oxygen partial pressure. A real-time spectroscopic ellipsometry is used to monitor the evolution of microstructure and properties of deposited oxides during growth and post-deposition. The properties of deposited oxide thin films depend on processing parameters. The resistivity of the NiOx thin films is in the range of 0.5 to approximately 100 ohm-cm with a TCR from -2%/K to -3.3%/K, where the resistivity of MoOx is between 3 and 2000 ohm-cm with TCR from -2.1%/K to -3.2%/K. We also report on the thermal stability of these deposited oxide thin films.

  11. Growth and Oxidation of Thin Film Al(2)Cu

    SciTech Connect

    SON,KYUNG-AH; MISSERT,NANCY A.; BARBOUR,J. CHARLES; HREN,J.J.; COPELAND,ROBERT GUILD; MINOR,KENNETH G.

    2000-01-18

    Al{sub 2}Cu thin films ({approx} 382 nm) are fabricated by melting and resolidifying Al/Cu bilayers in the presence of a {micro} 3 nm Al{sub 2}O{sub 3} passivating layer. X-ray Photoelectron Spectroscopy (XPS) measures a 1.0 eV shift of the Cu2p{sub 3/2} peak and a 1.6 eV shift of the valence band relative to metallic Cu upon Al{sub 2}Cu formation. Scanning Electron microscopy (SEM) and Electron Back-Scattered Diffraction (EBSD) show that the Al{sub 2}Cu film is composed of 30-70 {micro}m wide and 10-25 mm long cellular grains with (110) orientation. The atomic composition of the film as estimated by Energy Dispersive Spectroscopy (EDS) is 67 {+-} 2% Al and 33 {+-} 2% Cu. XPS scans of Al{sub 2}O{sub 3}/Al{sub 2}Cu taken before and after air exposure indicate that the upper Al{sub 2}Cu layers undergo further oxidation to Al{sub 2}O{sub 3} even in the presence of {approx} 5 nm Al{sub 2}O{sub 3}. The majority of Cu produced from oxidation is believed to migrate below the Al{sub 2}O{sub 3} layers, based upon the lack of evidence for metallic Cu in the XPS scans. In contrast to Al/Cu passivated with Al{sub 2}O{sub 3}, melting/resolidifying the Al/Cu bilayer without Al{sub 2}O{sub 3} results in phase-segregated dendritic film growth.

  12. P-channel thin film transistors using reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Chakraborty, S.; Resmi, A. N.; Renuka Devi, P.; Jinesh, K. B.

    2017-04-01

    Chemically reduced graphene oxide (rGO) samples with various degrees of reduction were prepared using hydrazine hydrate as the reducing agent. Scanning tunnelling microscope imaging shows that rGO contains rows of randomly distributed patches of epoxy groups. The local density of states of the rGO samples were mapped with scanning tunnelling spectroscopy, which shows that the bandgap in rGO originates from the epoxide regions itself. The Fermi level of the epoxide regions is shifted towards the valence band, making rGO locally p-type and a range of bandgaps from 0-2.2 eV was observed in these regions. Thin film transistors were fabricated using rGO as the channel layer. The devices show excellent output characteristics with clear saturation and gate dependence. The transfer characteristics show that rGO behaves as a p-type semiconductor; the devices exhibit an on/off ratio of 104, with a low-bias hole mobility of 3.9 cm2 V-1 s-1.

  13. P-channel thin film transistors using reduced graphene oxide.

    PubMed

    Chakraborty, S; Resmi, A N; Devi, P Renuka; Jinesh, K B

    2017-04-18

    Chemically reduced graphene oxide (rGO) samples with various degrees of reduction were prepared using hydrazine hydrate as the reducing agent. Scanning tunnelling microscope imaging shows that rGO contains rows of randomly distributed patches of epoxy groups. The local density of states of the rGO samples were mapped with scanning tunnelling spectroscopy, which shows that the bandgap in rGO originates from the epoxide regions itself. The Fermi level of the epoxide regions is shifted towards the valence band, making rGO locally p-type and a range of bandgaps from 0-2.2 eV was observed in these regions. Thin film transistors were fabricated using rGO as the channel layer. The devices show excellent output characteristics with clear saturation and gate dependence. The transfer characteristics show that rGO behaves as a p-type semiconductor; the devices exhibit an on/off ratio of 10(4), with a low-bias hole mobility of 3.9 cm(2) V(-1) s(-1).

  14. Anisotropy and micromagnetics in complex oxide thin films

    NASA Astrophysics Data System (ADS)

    Wynn, Thomas Andrew

    Complex oxide perovskites are a class of material with a remarkably wide range of functional properties including magnetism, superconductivity, metal-to-insulator transitions, colossal magnetoresistance, and in some cases high magnetocrystalline anisotropy. Reduction in length scales through thin film deposition and nanopatterning results in altered properties from their bulk constituents. In this work, thin films of La0.7Sr0.3CoO3 (LSCO) and LSCO/La 0.7Sr0.3MnO3 (LSMO) bilayers of varying thicknesses were deposited onto (LaAlO3)0.3(Sr2TaAlO 6)0.7 (LSAT) substrates, and their anisotropic magnetic properties were measured along the in- plane [100] and [110] directions using superconducting quantum interference device (SQUID) magnetometry and soft x-ray magnetic spectroscopy. The LSCO showed thickness dependent magnetism, and films were non-magnetic below a critical thickness of 4 nm. Magnetic LSCO films showed unique anisotropic effects on the saturation magnetization (Ms), with a lower M s in the [110] direction than the [100] direction. This potentially indicates the existence of a hard component in the [110] direction that is not being switched at fields in the SQUID magnetometer (7 T). Normalized hysteresis loops indicate the LSCO films display little magnetocrystalline anisotropy within the plane of the film. LSCO/LSMO bilayers with a fixed LSMO layer of 6 nm in thickness showed cobalt magnetism at thicknesses where single layers were non-magnetic, suggesting that the substrate/film interface is not the cause of the non-magnetic layer in the LSCO thin films. Magnetic coupling occurs in bilayers with LSCO layer thicknesses of below 4 nm, and both LSCO and LSMO layers showed a [110] easy axis. When the layer thickness of LSCO was increased above 8 nm, the LSCO layer developed a soft component at the LSCO/LSMO interface. This soft LSCO component remained coupled with the LSMO, though the easy axis changed to the [100] direction, and the harder, non-interface LSCO

  15. Thin film bismuth iron oxides useful for piezoelectric devices

    DOEpatents

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  16. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    NASA Astrophysics Data System (ADS)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  17. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    NASA Astrophysics Data System (ADS)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  18. p-Channel oxide thin film transistors using solution-processed copper oxide.

    PubMed

    Kim, Sang Yun; Ahn, Cheol Hyoun; Lee, Ju Ho; Kwon, Yong Hun; Hwang, Sooyeon; Lee, Jeong Yong; Cho, Hyung Koun

    2013-04-10

    Cu2O thin films were synthesized on Si (100) substrate with thermally grown 200-nm SiO2 by sol-gel spin coating method and postannealing under different oxygen partial pressure (0.04, 0.2, and 0.9 Torr). The morphology of Cu2O thin films was improved through N2 postannealing before O2 annealing. Under relatively high oxygen partial pressure of 0.9 Torr, the roughness of synthesized films was increased with the formation of CuO phase. Bottom-gated copper oxide (CuxO) thin film transistors (TFTs) were fabricated via conventional photolithography, and the electrical properties of the fabricated TFTs were measured. The resulting Cu2O TFTs exhibited p-channel operation, and field effect mobility of 0.16 cm2/(V s) and on-to-off drain current ratio of ∼1×10(2) were observed in the TFT device annealed at PO2 of 0.04 Torr. This study presented the potential of the solution-based process of the Cu2O TFT with p-channel characteristics for the first time.

  19. Surface and sub-surface thermal oxidation of thin ruthenium films

    SciTech Connect

    Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F.; Kokke, S.; Zoethout, E.

    2014-09-29

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  20. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    SciTech Connect

    Galloway, Heather Claire

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides.

  1. Surface and sub-surface thermal oxidation of thin ruthenium films

    NASA Astrophysics Data System (ADS)

    Coloma Ribera, R.; van de Kruijs, R. W. E.; Kokke, S.; Zoethout, E.; Yakshin, A. E.; Bijkerk, F.

    2014-09-01

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  2. Kinetics and mechanism of high-temperature oxidation of copper covered by bismuth thin films

    SciTech Connect

    Belousov, V.V. )

    1992-10-01

    The oxidation kinetics of copper covered by thin films of bismuth were studied by TGA, X-ray diffraction, X-ray micro-elemental, coulombmetric methods, and by electron and optional microscopy. At 1,003 K catastrophic oxidation of copper coated by bismuth thin films was observed. The parabolic rate constant of copper oxidation (Kp) depends markedly on the thickness of the bismuth film and is more than 1,000 times greater than that of bare copper. The mechanism of catastrophic copper oxidation in contact with bismuth is discussed.

  3. An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Li, Jiapeng; Lu, Lei; Feng, Zhuoqun; Kwok, Hoi Sing; Wong, Man

    2017-04-01

    The dependence of device reliability against a variety of stress conditions on the annealing atmosphere was studied using a single metal-oxide thin-film transistor with thermally induced source/drain regions. A cyclical switch between an oxidizing and a non-oxidizing atmosphere induced a regular change in the stress-induced shift of the turn-on voltage, with the magnitude of the shift being consistently smaller after annealing in an oxidizing atmosphere. The observed behavior is discussed in terms of the dependence of the population of oxygen vacancies on the annealing atmosphere, and it is recommended the last of the sequence of thermal processes applied to a metal-oxide thin-film transistor be executed in an oxidizing atmosphere.

  4. Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

    NASA Astrophysics Data System (ADS)

    Wang, Shuyu; Yu, Shifeng; Lu, Ming; Liu, Mingzhao; Zuo, Lei

    2017-04-01

    Here we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

  5. Interface properties of thin oxide layers grown on strained SiGe layers at low temperatures

    NASA Astrophysics Data System (ADS)

    Mukhopadhyay, M.; Ray, S. K.; Ghosh, T. B.; Sreemany, M.; Maiti, C. K.

    1996-03-01

    The chemical state and the electrical properties of the interfaces of thin oxide films grown on strained 0268-1242/11/3/014/img8 layers using plasma and thermal oxidation have been studied in detail. X-ray photoelectron spectroscopy studies show no Ge pile-up at the oxide/substrate interface. In the case of plasma oxidation, Ge at the oxide surface is found to be in a fully oxidized state, while the formation of an intermediate oxidized state is observed in the case of low-temperature thermal oxidation. High-frequency (1 MHz) capacitance - voltage (C - V) and conductance - voltage (G - V) measurements have indicated the growth of good quality gate oxides. The fixed oxide charge and interface state densities are comparable to those of low-temperature-grown metal - oxide - semiconductor capacitors on Si with aluminium gates.

  6. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates.

    PubMed

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-01-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  7. Physical properties in thin films of iron oxides.

    SciTech Connect

    Uribe, J. D.; Osorio, J.; Barrero, C. A.; Girata, D.; Morales, A. L.; Hoffmann, A.; Materials Science Division; Univ. de Antioquia

    2008-01-01

    We have grown hematite ({alpha}-Fe{sub 2}O{sub 3}) thin films on stainless steel substrates and magnetite (Fe{sub 3}O{sub 4}) thin films on (0 0 1)-Si single crystal substrates by a RF magnetron sputtering process. {alpha}-Fe{sub 2}O{sub 3} thin films were grown in an Ar atmosphere at substrate temperatures around 400 C, and Fe{sub 3}O{sub 4} thin films in an Ar/O{sub 2} reactive atmosphere at substrate temperatures around 500 C. Conversion electron Moessbauer (CEM) spectra of {alpha}-Fe{sub 2}O{sub 3} thin films exhibit values for hyperfine parameter characteristic of the hematite stoichiometric phase in the weak ferromagnetic state [R.E. Vandenberghe, in: Moessbauer Spectroscopy and Applications in Geology, University Gent, Belgium, 1990. [1

  8. Nickel oxide thin film from electrodeposited nickel sulfide thin film: peroxide sensing and photo-decomposition of phenol.

    PubMed

    Jana, Sumanta; Samai, Subhasis; Mitra, Bibhas C; Bera, Pulakesh; Mondal, Anup

    2014-09-14

    A novel non-enzymatic peroxide sensor has been constructed by using nickel oxide (NiO) thin films as sensing material, which were prepared by a two-step process: (i) electrodeposition of nickel sulfide (NiS) and (ii) thermal air oxidation of as-deposited NiS to NiO. The resultant material is highly porous and comprises interconnected nanofibers. UV-Vis spectroscopy, FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM) were used for a complete characterization of nanostructured NiO thin films. Cyclic voltammetry study shows that NiO/ITO electrode facilitates the oxidation of hydrogen peroxide and exhibits excellent catalytic activity towards its sensing. The amperometric study of NiO/ITO was carried out to determine the sensitivity, linear range, detection limit of the proposed sensor. The sensor exhibits prominent electrocatalytic activity toward the oxidation of H2O2 with a wide linear range and a low detection limit. The possible use of the synthesized NiO thin films as an effective photocatalyst for the decomposition of phenol is also discussed.

  9. Preparation and characterization of tungsten oxide thin films with high electrochromic performance

    NASA Astrophysics Data System (ADS)

    Lv, Gang; Wu, Yonggang; Wu, Heyun; Ling, Leijie; Xia, Zihuan

    2010-10-01

    Tungsten oxide thin films were prepared by depositing WO3 onto glass substrates coated with ITO using reactive evaporation process at ambient temperature and 200°C respectively. The thin films were grown at different deposition rate. Chronoamperometry was carried out and spectral measurements were performed in situ. Results showed that the thin films prepared at low deposition rates possess higher coloration efficiency (CE), and the thin films grown at ambient temperature have high CE than those grown at 200°C. The origin of the differences in coloration efficiency of the thin films were analyzed and discussed based on the electrochromic mechanism of amorphous tungsten oxide films. The samples morphology was characterized by atom force microscopy (AFM).

  10. Preparation and characterization of tungsten oxide thin films with high electrochromic performance

    NASA Astrophysics Data System (ADS)

    Lv, Gang; Wu, Yonggang; Wu, Heyun; Ling, Leijie; Xia, Zihuan

    2011-02-01

    Tungsten oxide thin films were prepared by depositing WO3 onto glass substrates coated with ITO using reactive evaporation process at ambient temperature and 200°C respectively. The thin films were grown at different deposition rate. Chronoamperometry was carried out and spectral measurements were performed in situ. Results showed that the thin films prepared at low deposition rates possess higher coloration efficiency (CE), and the thin films grown at ambient temperature have high CE than those grown at 200°C. The origin of the differences in coloration efficiency of the thin films were analyzed and discussed based on the electrochromic mechanism of amorphous tungsten oxide films. The samples morphology was characterized by atom force microscopy (AFM).

  11. Novel Low Temperature Processing for Enhanced Properties of Ion Implanted Thin Films and Amorphous Mixed Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Vemuri, Rajitha

    This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates. Volumetric heating of the sample in the presence of the microwave field facilitates quick absorption of radiation to promote recrystallization at the amorphous-crystalline interface, apart from electrical activation of the dopants due to relocation to the substitutional sites. Structural and electrical characterization confirm recrystallization of heavily implanted Si within 40 seconds anneal time with minimum dopant diffusion compared to rapid thermal annealed samples. The use of microwave anneal to improve performance of multilayer thin film devices, e.g. thin film transistors (TFTs) requires extensive study of interaction of individual layers with electromagnetic radiation. This issue has been addressed by developing detail understanding of thin films and interfaces in TFTs by studying reliability and failure mechanisms upon extensive stress test. Electrical and ambient stresses such as illumination, thermal, and mechanical stresses are inflicted on the mixed oxide based thin film transistors, which are explored due to high mobilities of the mixed oxide (indium zinc oxide, indium gallium zinc oxide) channel layer material. Semiconductor parameter analyzer is employed to extract transfer characteristics, useful to derive mobility, subthreshold, and threshold voltage parameters of the transistors. Low temperature post processing anneals compatible with polymer substrates are performed in several ambients (oxygen, forming gas and vacuum) at 150 °C as a preliminary step. The analysis of the results pre and post low temperature anneals using device physics fundamentals

  12. Structure and Optical Properties of Nanocrystalline Hafnium Oxide Thin Films (PostPrint)

    DTIC Science & Technology

    2014-09-01

    AFRL-RX-WP-JA-2014-0214 STRUCTURE AND OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) Neil R. Murphy AFRL...OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...publication is available at http://dx.doi.org/10.1016/j.optmat.2014.08.005 14. ABSTRACT Hafnium oxide (HfO2) films were grown by sputter-deposition by

  13. Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

    SciTech Connect

    Das, K. C.; Ghosh, S. P.; Tripathy, N.; Kar, J. P.; Bose, G.; Lee, T.; Myoung, J. M.

    2015-06-24

    In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 °C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

  14. Assessing the antimicrobial activity of zinc oxide thin films using disk diffusion and biofilm reactor

    NASA Astrophysics Data System (ADS)

    Gittard, Shaun D.; Perfect, John R.; Monteiro-Riviere, Nancy A.; Wei, Wei; Jin, Chunming; Narayan, Roger J.

    2009-03-01

    The electronic and chemical properties of semiconductor materials may be useful in preventing growth of microorganisms. In this article, in vitro methods for assessing microbial growth on semiconductor materials will be presented. The structural and biological properties of silicon wafers coated with zinc oxide thin films were evaluated using atomic force microscopy, X-ray photoelectron spectroscopy, and MTT viability assay. The antimicrobial properties of zinc oxide thin films were established using disk diffusion and CDC Biofilm Reactor studies. Our results suggest that zinc oxide and other semiconductor materials may play a leading role in providing antimicrobial functionality to the next-generation medical devices.

  15. Copper Oxide Substrates and Epitaxial Copper Oxide/Zinc Oxide Thin Film Heterostructures for Solar Energy Conversion

    NASA Astrophysics Data System (ADS)

    Darvish, Davis Solomon

    Future fossil fuel scarcity and environmental degradation have demonstrated the need for renewable, low-carbon sources of energy to power an increasingly industrialized world. Solar energy with its infinite supply makes it an extraordinary resource that should not go unused. However with current materials, adoption is limited by cost and so a paradigm shift must occur to get everyone on the same page embracing solar technology. Cuprous Oxide (Cu2O) is a promising earth abundant material that can be a great alternative to traditional thin-film photovoltaic materials like CIGS, CdTe, etc. We have prepared Cu 2O bulk substrates by the thermal oxidation of copper foils as well Cu2O thin films deposited via plasma-assisted Molecular Beam Epitaxy. From preliminary Hall measurements it was determined that Cu2O would need to be doped extrinsically. This was further confirmed by simulations of ZnO/Cu2O heterojunctions. A cyclic interdependence between, defect concentration, minority carrier lifetime, film thickness, and carrier concentration manifests itself a primary reason for why efficiencies greater than 4% has yet to be realized. Our growth methodology for our thin-film heterostructures allow precise control of the number of defects that incorporate into our film during both equilibrium and nonequilibrium growth. We also report process flow/device design/fabrication techniques in order to create a device. A typical device without any optimizations exhibited open-circuit voltages Voc, values in excess 500mV; nearly 18% greater than previous solid state devices.

  16. Vibrational spectra of CO adsorbed on oxide thin films: A tool to probe the surface defects and phase changes of oxide thin films

    SciTech Connect

    Savara, Aditya

    2014-03-15

    Thin films of iron oxide were grown on Pt(111) single crystals using cycles of physical vapor deposition of iron followed by oxidative annealing in an ultrahigh vacuum apparatus. Two procedures were utilized for film growth of ∼15–30 ML thick films, where both procedures involved sequential deposition+oxidation cycles. In procedure 1, the iron oxide film was fully grown via sequential deposition+oxidation cycles, and then the fully grown film was exposed to a CO flux equivalent to 8 × 10{sup −7} millibars, and a vibrational spectrum of adsorbed CO was obtained using infrared reflection-absorption spectroscopy. The vibrational spectra of adsorbed CO from multiple preparations using procedure 1 show changes in the film termination structure and/or chemical nature of the surface defects—some of which are correlated with another phase that forms (“phase B”), even before enough of phase B has formed to be easily detected using low energy electron diffraction (LEED). During procedure 2, CO vibrational spectra were obtained between deposition+oxidation cycles, and these spectra show that the film termination structure and/or chemical nature of the surface defects changed as a function of sequential deposition+oxidation cycles. The authors conclude that measurement of vibrational spectra of adsorbed CO on oxide thin films provides a sensitive tool to probe chemical changes of defects on the surface and can thus complement LEED techniques by probing changes not visible by LEED. Increased use of vibrational spectra of adsorbed CO on thin films would enable better comparisons between films grown with different procedures and by different groups.

  17. Measurement of faradaic current during AFM local oxidation of magnetic metal thin films

    NASA Astrophysics Data System (ADS)

    Takemura, Yasushi; Shimada, Yasuyuki; Watanabe, Genta; Yamada, Tsutomu; Shirakashi, Jun-ichi

    2007-04-01

    Faradaic current during a local oxidation using an atomic force microscope was studied. The intensity of the measured faradaic current was increased with increasing bias voltage applied to a cantilever, resulting in fabrication of larger size of nano-oxide structures on Si substrates. On the other hand, an excess current (over current) that was considered not to contribute the oxidation reaction was observed noticeably in the local oxidation of NiFe thin films. It was found that the excess current could be suppressed by depositing insulating oxide layers on the surfaces. The surface oxide layers were also advantageous for stable existence of meniscus promoting the local oxidation because of their hydrophilic properties. This method of capped oxide layers is significant for stable performance of the local oxidation technique fabricating nanostructures and nano-devices.

  18. Electrocatalytic Oxidation of Alcohols on Cu2O/Cu Thin Film Electrodeposited on Titanium Substrate

    NASA Astrophysics Data System (ADS)

    Bezghiche-Imloul, T.; Hammache-Makhloufi, H.; Ait Ahmed, N.

    2016-05-01

    A novel class of nanomaterials consisting of a composite thin film of cooper metal nanoparticles and cuprous oxide (Cu2O/Cu) for the catalytic electrooxidation of methanol, ethanol and ethylene glycol is considered here. The material was prepared by electrochemical deposition under a potentiostatic condition of -250mV vs saturated calomel electrode (SCE) from acetate bath at titanium substrate. The effect of electrodeposition time on the structure, composition and morphology of the deposit was investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results indicated the formation of pure cuprous oxide Cu2O thin film at low electrodeposition time (5 min) and Cu2O oxide thin film decorated with Cu nanoparticles (Cu2O/Cu) at high electrodeposition time. The obtained Cu2O and Cu2O/Cu thin films were explored for the electrochemical oxidation of alcohols in 1 M NaOH alkaline medium using cyclic voltammetry (CV) method. The Cu2O/Cu thin film grown at electrodeposition time of 15 min shows the best electrocatalytic performance toward ethanol oxidation. The effect of concentration of alcohols on the oxidation reaction was studied by CV and chronoamperometry. It was found that the reaction is governed by an irreversible diffusion process. The promising electrocatalytic activity of the Cu2O/Cu electrode provides a new platform for the fabrication of high-performance thin films for alcohols oxidation in alkaline medium. Therefore, the Cu2O/Cu electrode is a suitable as a less expensive electrocatalyst for alcohols oxidation.

  19. Evaluation of Characterization Techniques for Iron Pipe Corrosion Products and Iron Oxide Thin Films

    SciTech Connect

    Borch, Thomas; Camper, Anne K.; Biederman, Joel A.; Butterfield, Phillip; Gerlach, Robin; Amonette, James E.

    2008-10-01

    A common problem faced by drinking water studies is that of properly characterizing the corrosion products (CP) in iron pipescor synthetic Fe (hydr)oxides used to simulate the iron pipe used in municipal drinking-water systems. The present work compares the relative applicability of a suite of imaging and analytical techniques for the characterization of CPs and synthetic Fe oxide thin films and provide an overview of the type of data that each instrument can provide as well as their limitations to help researchers and consultants choose the best technique for a given task. Crushed CP from a water distribution system and synthetic Fe oxide thin films formed on glass surfaces were chosen as test samples for this evaluation. The CP and synthetic Fe oxide thin films were analyzed by atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive spectroscopy, time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray powder diffractometry (XRD), grazing incident diffractometry (GID), transmission electron microscopy (TEM), selected area electron diffraction, X-ray photoelectron spectroscopy (XPS), Fourier transform infrared, Mössbauer spectroscopy, Brunauer-Emmett-Teller N2 adsorption and Fe concentration was determined by the ferrozine method. XRD and GID were found to be the most suitable techniques for identification of the mineralogical composition of CP and synthetic Fe oxide thin films, respectively. AFM and a combined ToF-SIMS-AFM approach proved excellent for roughness and depth profiling analysis of synthetic Fe oxide thin films, respectively. Corrosion products were difficult to study by AFM due to their surface roughness, while synthetic Fe oxide thin films resisted most spectroscopic methods due to their limited thickness (118 nm). XPS analysis is not recommended for mixtures of Fe (hydr)oxides due to their spectral similarities. SEM and TEM provided great detail on mineralogical morphology.

  20. Parallel writing on zirconium nitride thin films by local oxidation nanolithography

    NASA Astrophysics Data System (ADS)

    Farkas, N.; Comer, J. R.; Zhang, G.; Evans, E. A.; Ramsier, R. D.; Wight, S.; Dagata, J. A.

    2004-12-01

    Parallel pattern transfer of submicrometer-scale oxide features onto zirconium nitride thin films is reported. The oxidation reaction was verified by Auger microprobe analysis and secondary ion mass spectrometry. Oxide features of ˜70nm in height can be formed and selectively etched in a dilute aqueous hydrogen fluoride solution. This provides an interesting route to potential new applications for high-melting point, biocompatible surfaces that possess small feature sizes with controlled geometries.

  1. Improving electrical properties of sol-gel derived zinc oxide thin films by plasma treatment

    NASA Astrophysics Data System (ADS)

    Talukder, Al-Ahsan; Pokharel, Jyotshna; Shrestha, Maheshwar; Fan, Qi H.

    2016-10-01

    Being a direct and wide bandgap semiconductor, zinc oxide is a suitable material for various optoelectronic applications. These applications require tuning and controlling over the electrical and optical properties of zinc oxide films. In this work, zinc oxide thin films were prepared by a solution method that led to oriented crystal growth along (002) plane. The zinc oxide thin films were treated with oxygen, hydrogen, and nitrogen plasmas. The films were characterized to reveal the effects of plasma treatments on transmittance, crystallinity, carrier density, carrier mobility, and electrical resistivity. Oxygen plasma treatment improved the crystallinity of the zinc oxide thin film without affecting the film's transmittance. Hydrogen plasma treatments were found very effective in improving the electrical conductivity sacrificing the film's transmittance. Nitrogen plasma treatment led to improved electrical conductivity without compromising the crystallinity and optical transmittance. Sequential oxygen, hydrogen, and nitrogen plasma treatments significantly reduced the resistivity of zinc oxide thin films by over two orders and maintained the transmittance close to the as-deposited films of ˜80% in visible wavelength range. This is the first work on the improvement of conductivity of solution-based zinc oxide films using the plasma treatment.

  2. Unexpected behaviour of one Pb monolayer deposited on aluminum oxide thin film grown on Ag(111)

    SciTech Connect

    Vizzini, Sébastien Bertoglio, M.; Oughaddou, Hamid; Hoarau, J. Y.; Biberian, J. P.; Aufray, B.

    2013-12-23

    Using scanning tunneling microscopy (STM), Auger electron spectroscopy, and low energy electron diffraction, we have observed a surprising complete dissolution at room temperature of one lead monolayer deposited by evaporation on an aluminum oxide thin film (∼0.8 nm thick) previously grown on Ag (111). We have observed the quasi-instantaneous diffusion of the lead deposit through the oxide layer to the silver/oxide interface. After the diffusion process, lead atoms form a Moiré superstructure, which is characterized by STM through the oxide layer. This unexpected behavior puts in light the very weak interaction between the aluminum oxide and the silver substrate.

  3. Two types of local oxide/substrate defects in very thin silicon dioxide films on silicon

    NASA Astrophysics Data System (ADS)

    Lau, W. S.; Sane, V.; Pey, K. S.; Cronquist, B.

    1995-11-01

    The local oxide defects observed in thin silicon dioxide films on p-type Si were studied with the electron beam induced current/tunneling current microscopy technique. Excluding pinholes, all the local defects observed are local oxide/substrate defects, i.e., local oxide defects propagated from defects in the Si substrate into the SiO2. It was observed that local oxide/substrate defects can be further differentiated into two different types by studying the transition from the true oxide electron beam induced current contrast to the tunneling current microscopy contrast.

  4. Tin etching from metallic and oxidized scandium thin films

    NASA Astrophysics Data System (ADS)

    Pachecka, M.; Lee, C. J.; Sturm, J. M.; Bijkerk, F.

    2017-08-01

    The role of oxide on Sn adhesion to Sc surfaces was studied with in-situ ellipsometry, X-ray photoelectron spectroscopy and secondary electron microscopy. Sn etching with hydrogen radicals was performed on metallic Sc, metallic Sc with a native oxide, and a fully oxidized Sc layer. The results show that Sn adsorbs rather weakly to a non-oxidized Sc surface, and is etched relatively easily by atomic hydrogen. In contrast, the presence of native oxide on Sc allows Sn to adsorb more strongly to the surface, slowing the etching. Furthermore, thinner layers of scandium oxide result in weaker Sn adsorption, indicating that the layer beneath the oxide plays a significant role in determining the adsorption strength. Unexpectedly, for Sn on Sc2O3, and, to a lesser extent, for Sn on Sc, the etch rate shows a variation over time, which is explained by surface restructuring, temperature change, and hydrogen adsorption saturation.

  5. Electrochromic performance, wettability and optical study of copper manganese oxide thin films: Effect of annealing temperature

    NASA Astrophysics Data System (ADS)

    Falahatgar, S. S.; Ghodsi, F. E.; Tepehan, F. Z.; Tepehan, G. G.; Turhan, İ.

    2014-01-01

    In the present work, the nanostructured copper manganese oxide (CMO) thin films were prepared from acetate based sol-gel precursors and deposited on glass and indium tin oxide (ITO) substrates by dip-coating technique. The films were annealed at 300, 400 and 500 °C in ambient atmosphere. The effects of annealing temperature on structural, morphological, wettability, electrochromic and optical properties of CMO thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDX), water contact angle measurement (WCA), cyclic voltammetry (CV) measurements and ultraviolet-visible (UV-vis) spectrophotometery. The presence of mixed oxide phases comprising of copper manganese oxide (CuMn2O4) and manganese oxide at different annealing temperature was confirmed by XRD patterns. The results showed that the Mn3O4 phase has been changed to Mn2O3 when the annealing temperature is increased from 300 to 500 °C. The FESEM images indicated that the granular surface morphology was sensitive to annealing temperature. EDX studies indicated that the thin films contained O, Mn and Cu species. Wettability studies showed that the water contact angle of the nanostructured CMO thin films coated on glass substrates was influenced by the variation of annealing temperature and the surface nature of thin films was changed from hydrophilic to hydrophobic. The results of CVs measurement indicated that the anodic and cathodic charge density and capacitance of all CMO samples decreased with increasing scan rate in potential range of -1-1 eV. Also, the annealed CMO thin film at 500 °C showed better electrochromic performance with respect to other samples at lower scan rate. The thickness, refractive index, extinction coefficient and optical band gap of thin films coated on glass substrates were calculated from reflectance and transmittance spectra using an iterative numerical method. The optical band gap of

  6. Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique

    PubMed Central

    Lee, Sangik; Hwang, Inrok; Oh, Sungtaek; Hong, Sahwan; Kim, Yeonsoo; Nam, Yoonseung; Lee, Keundong; Yoon, Chansoo; Kim, Wondong; Park, Bae Ho

    2014-01-01

    High-performance ultra-thin oxide layers are required for various next-generation electronic and optical devices. In particular, ultra-thin resistive switching (RS) oxide layers are expected to become fundamental building blocks of three-dimensional high-density non-volatile memory devices. Until now, special deposition techniques have been introduced for realization of high-quality ultra-thin oxide layers. Here, we report that ultra-thin oxide layers with reliable RS behavior can be self-assembled by field-induced oxygen migration (FIOM) at the interface of an oxide-conductor/oxide-insulator or oxide-conductor/metal. The formation via FIOM of an ultra-thin oxide layer with a thickness of approximately 2–5 nm and 2.5% excess oxygen content is demonstrated using cross-sectional transmission electron microscopy and secondary ion mass spectroscopy depth profile. The observed RS behavior, such as the polarity dependent forming process, can be attributed to the formation of an ultra-thin oxide layer. In general, as oxygen ions are mobile in many oxide-conductors, FIOM can be used for the formation of ultra-thin oxide layers with desired properties at the interfaces or surfaces of oxide-conductors in high-performance oxide-based devices. PMID:25362933

  7. Thermochemical hydrogen generation of indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Lim, Taekyung; Ju, Sanghyun

    2017-03-01

    Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD) and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.

  8. Preparation and Optical Properties of Zirconium-Titanium-Oxide Thin Films by Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Matsumoto, Hironaga; Sekine, Masato; Miura, Noboru; Nakano, Ryotaro; Matsumoto, Setsuko

    2005-02-01

    Zirconium-titanium-oxide thin films were prepared by multi-target rf reactive sputtering using metallic targets of zirconium and titanium. The compositional ratio of zirconium to titanium in the thin films was precisely controlled through rf power. Zirconium and titanium in the thin films were found to exist as mixtures of chemically bonded ZrO2 and TiO2 from XPS spectra. The zirconium-titanium-oxide thin films with compositional ratio x<0.42 were identified to have a tetragonal crystal structure, whereas those with x≥q 0.42 were identified to be in the amorphous state. The refractive index of the zirconium-titanium-oxide thin film at a wavelength of 550 nm changed from 2.25 to 2.55 according to compositional ratio x, and the dispersion of the refractive index was analyzed using the Lorentz oscillator model with four oscillators. It was clarified that the estimated oscillator energies E1 (10.5 eV) and E2 (6.5 eV) correspond to zirconium oxide, and that E3 (5.5 eV) and E4 (4.3 eV) correspond to titanium oxide from fundamental absorption spectra and photoconductivity.

  9. Surfactant-assisted ultrasonic spray pyrolysis of nickel oxide and lithium-doped nickel oxide thin films, toward electrochromic applications

    NASA Astrophysics Data System (ADS)

    Denayer, Jessica; Bister, Geoffroy; Simonis, Priscilla; Colson, Pierre; Maho, Anthony; Aubry, Philippe; Vertruyen, Bénédicte; Henrist, Catherine; Lardot, Véronique; Cambier, Francis; Cloots, Rudi

    2014-12-01

    Lithium-doped nickel oxide and undoped nickel oxide thin films have been deposited on FTO/glass substrates by a surfactant-assisted ultrasonic spray pyrolysis. The addition of polyethylene glycol in the sprayed solution has led to improved uniformity and reduced light scattering compared to films made without surfactant. Furthermore, the presence of lithium ions in NiO films has resulted in improved electrochromic performances (coloration contrast and efficiency), but with a slight decrease of the electrochromic switching kinetics.

  10. Production of amorphous tin oxide thin films and microstructural transformation induced by heat treatment

    NASA Astrophysics Data System (ADS)

    Chen, Z. W.; Lai, J. K. L.; Shek, C. H.; Chen, H. D.

    2005-10-01

    X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and high resolution transmission electron microscopy were used to study tin oxide thin films deposited on Si(100) substrates at room temperature using pulsed laser deposition techniques with a sintered cassiterite SnO2 target and subsequently heat-treated. X-ray diffraction and scanning electron microscopy results demonstrated that the as-prepared thin films consisted of an amorphous matrix as well as plume-like features, which are shown many micropores. The thin films that were heat treated for 2 h at 150 °C had tetragonal rutile nanocrystalline SnO2 structures. The microstructural evolution of the tin oxide thin films during the heat treatment is discussed in the paper.

  11. Copper oxide thin-flim and nanowire for e-textile applications

    NASA Astrophysics Data System (ADS)

    Han, Jin-Woo; Lohn, Andrew; Kobayashi, Nobuhiko P.; Meyyappan, M.

    2011-10-01

    Devices fabricated using nanowire structures can provide performance enhancement as well as open new applications. Integration of electronics into textile, referred to as e-textile, offers an opportunity for future electronics. Herein, copper and copper oxide based nanostructures are embedded for e-textile. Metallic copper wire is utilized as a growth substrate, which is simultaneously used as the fiber of mesh textiles. Among various metals, copper is promising as it is non-toxic and relatively abundant on earth. The motivating factor is ease of growth of nanostructures; the nanowire and thin-film forms are synthesized by self-catalytic vapor-solid growth. Simply heating with oxygen gas can form copper oxide nanowires or thin-film depending on the growth conditions. As key building blocks in e-textile, memory, transistor, and interconnect are presented. The resistive memory is comprised of copper oxide thin-film sandwiched within two orthogonal fibers. For a metal semiconductor field effect transistor (MESFET), a Schottky junction is used as the gate to channel barrier. The copper fiber and copper oxide thin-film are devoted to the gate and channel, respectively. For an interconnection, the neighboring fibers are electrically connected by transforming copper oxide nanowires into copper nanowires. Hydrogen thermal reduction of copper oxide is proved to be effective to make conductive nanowires.Inp

  12. Preparation of Thin Melanin-Type Films by Surface-Controlled Oxidation.

    PubMed

    Salomäki, Mikko; Tupala, Matti; Parviainen, Timo; Leiro, Jarkko; Karonen, Maarit; Lukkari, Jukka

    2016-04-26

    The preparation of thin melanin films suitable for applications is challenging. In this work, we present a new alternative approach to thin melanin-type films using oxidative multilayers prepared by the sequential layer-by-layer deposition of cerium(IV) and inorganic polyphosphate. The interfacial reaction between cerium(IV) in the multilayer and 5,6-dihydroxyindole (DHI) in the adjacent aqueous solution leads to the formation of a thin uniform film. The oxidation of DHI by cerium(IV) proceeds via known melanin intermediates. We have characterized the formed DHI-melanin films using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), UV-vis spectroscopy, and spectroelectrochemistry. When a five-bilayer oxidative multilayer is used, the film is uniform with a thickness of ca. 10 nm. Its chemical composition, as determined using XPS, is typical for melanin. It is also redox active, and its oxidation occurs in two steps, which can be assigned to semiquinone and quinone formation within the indole structural motif. Oxidative multilayers can also oxidize dopamine, but the reaction stops at the dopamine quinone stage because of the limited amount of the multilayer-based oxidizing agent. However, dopamine oxidation by Ce(IV) was studied also in solution by UV-vis spectroscopy and mass spectrometry in order to verify the reaction mechanism and the final product. In solution, the oxidation of dopamine by cerium shows that the indole ring formation takes place already at low pH and that the mass spectrum of the final product is practically identical with that of commercial melanin. Therefore, layer-by-layer formed oxidative multilayers can be used to deposit functional melanin-type thin films on arbitrary substrates by a surface-controlled reaction.

  13. Analysis of Zinc Oxide Thin Films Synthesized by Sol-Gel via Spin Coating

    NASA Astrophysics Data System (ADS)

    Wolgamott, Jon Carl

    Transparent conductive oxides are gaining an increasingly important role in optoelectronic devices such as solar cells. Doped zinc oxide is a candidate as a low cost and nontoxic alternative to tin doped indium oxide. Lab results have shown that both n-type and p-type zinc oxide can be created on a small scale. This can allow zinc oxide to be used as either an electrode as well as a buffer layer to increase efficiency and protect the active layer in solar cells. Sol-gel synthesis is emerging as a low temperature, low cost, and resource efficient alternative to producing transparent conducting oxides such as zinc oxide. For sol-gel derived zinc oxide thin films to reach their potential, research in this topic must continue to optimize the known processing parameters and expand to new parameters to tighten control and create novel processing techniques that improve performance. The processing parameters of drying and annealing temperatures as well as cooling rate were analyzed to see their effect on the structure of the prepared zinc oxide thin films. There were also preliminary tests done to modify the sol-gel process to include silver as a dopant to produce a p-type thin film. The results from this work show that the pre- and post- heating temperatures as well as the cooling rate all play their own unique role in the crystallization of the film. Results from silver doping show that more work needs to be done to create a sol-gel derived p-type zinc oxide thin film.

  14. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  15. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  16. Mechanical Properties of Clay Thin Plate as Pre-Evaluation for Solid Oxide Fuel Cell Manufacture

    NASA Astrophysics Data System (ADS)

    Sulistyo, Sulistyo; Mahzan, Shahruddin; Ariffin, Saparudin

    2009-09-01

    Solid oxide fuel cell that produces a certain power density requires specific air pressures to be flowed within its membrane to ensure that certain electrons flow through its fuel cell membrane. Therefore, it is vital for a fuel cell membrane to sustain the pressure loading without any failures. This paper investigates the mechanical properties of clay thin plate as a preliminary evaluation of parameter processes used for solid oxide fuel cell manufacture. Several parameter processes that affect the mechanical properties such as compaction loading, sintering temperature, grain size and of the thin plate are of interest. The experiment uses the Vickers test to determine the hardness number. The experimental results are used as guidance in preparing the thin plate of solid oxide fuel cell.

  17. Molybdenum as a contact material in zinc tin oxide thin film transistors

    SciTech Connect

    Hu, W.; Peterson, R. L.

    2014-05-12

    Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 Ω-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34 μm, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.

  18. Surface measurement of indium tin oxide thin film by wavelength-tuning Fizeau interferometry.

    PubMed

    Kim, Yangjin; Hibino, Kenichi; Sugita, Naohiko; Mitsuishi, Mamoru

    2015-08-10

    Indium-tin oxide (ITO) thin films have been widely used in displays such as liquid crystal displays and touch panels because of their favorable electrical conductivity and optical transparency. The surface shape and thickness of ITO thin films must be precisely measured to improve their reliability and performance. Conventional measurement techniques take single point measurements and require expensive systems. In this paper, we measure the surface shape of an ITO thin film on top of a transparent plate using wavelength-tuning Fizeau interferometry. The surface shape was determined by compensating for the phase error introduced by optical interference from the thin film, which was calculated using the phase and amplitude distributions measured by wavelength-tuning. The proposed measurement method achieved noncontact, large-aperture, and precise measurements of transparent thin films. The surface shape of the sample was experimentally measured to an accuracy of 5.13 nm.

  19. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    SciTech Connect

    Kim, Junghwan Miyokawa, Norihiko; Ide, Keisuke; Toda, Yoshitake; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-01-15

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  20. Plasmonic nanodot array optimization on organic thin film solar cells using anodic aluminum oxide templates

    NASA Astrophysics Data System (ADS)

    Bae, Kyuyoung; Kim, Kyoungsik

    2013-09-01

    The fabrication method of plasmonic nanodots on ITO or nc-ZnO substrate has been developed to improve the efficiency of organic thin film solar cells. Nanoscale metallic nanodots arrays are fabricated by anodic aluminum oxide (AAO) template mask which can have different structural parameters by varying anodization conditions. In this paper, the structural parameters of metallic nanodots, which can be controlled by the diverse structures of AAO template mask, are investigated to enhance the optical properties of organic thin film solar cells. It is found that optical properties of the organic thin film solar cells are improved by finding optimization values of the structural parameters of the metallic nanodot array.

  1. Chemically derived graphene oxide: towards large-area thin-film electronics and optoelectronics.

    PubMed

    Eda, Goki; Chhowalla, Manish

    2010-06-11

    Chemically derived graphene oxide (GO) possesses a unique set of properties arising from oxygen functional groups that are introduced during chemical exfoliation of graphite. Large-area thin-film deposition of GO, enabled by its solubility in a variety of solvents, offers a route towards GO-based thin-film electronics and optoelectronics. The electrical and optical properties of GO are strongly dependent on its chemical and atomic structure and are tunable over a wide range via chemical engineering. In this Review, the fundamental structure and properties of GO-based thin films are discussed in relation to their potential applications in electronics and optoelectronics.

  2. Conductor Formation Through Phase Transformation in Ti-Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Liu, Y. S.; Lin, Y. H.; Wei, Y. S.; Liu, C. Y.

    2012-01-01

    The resistance and transmittance of Ti-oxide thin films sputtered on quartz substrates were studied. The electrical and optical properties can be changed by varying the percentage of O2 introduced during the sputtering. The lowest resistivity for the sputtered Ti-oxide thin film was 2.30 × 10-2 Ω cm for 12.5% O2, which was obtained after annealing at 400°C in ambient oxygen. The results of x-ray photoelectron spectroscopy (XPS) curve-fitting indicate that the Ti-oxide thin film contained both Ti2O3 and TiO2 phases during deposition. The Ti2O3 phase was transformed into the stable TiO2 phase during annealing. The Ti2O3-TiO2 phase transformation initiated the substitution reaction. The substitution of Ti4+ ions in the TiO2 phase for the Ti3+ ions in the Ti2O3 phase created the free electrons. This Ti2O3-TiO2 phase transformation demonstrates the potential mechanism for conduction in the annealed Ti-oxide thin films. The transmittance of the annealed Ti-oxide thin films can be as high as approximately 90% at the 400 nm wavelength with the introduction of 16.5% O2. This result indicates that the annealed Ti-oxide thin films are excellent candidates for use as transparent conducting layers for ultraviolet (UV) or near-UV light-emitting diode (LED) devices.

  3. Electrodeposition and electrochemical reduction of epitaxial metal oxide thin films and superlattices

    NASA Astrophysics Data System (ADS)

    He, Zhen

    The focus of this dissertation is the electrodeposition and electrochemical reduction of epitaxial metal oxide thin films and superlattices. The electrochemical reduction of metal oxides to metals has been studied for decades as an alternative to pyrometallurgical processes for the metallurgy industry. However, the previous work was conducted on bulk polycrystalline metal oxides. Paper I in this dissertation shows that epitaxial face-centered cubic magnetite (Fe3O4 ) thin films can be electrochemically reduced to epitaxial body-centered cubic iron (Fe) thin films in aqueous solution on single-crystalline Au substrates at room temperature. This technique opens new possibilities to produce special epitaxial metal/metal oxide heterojunctions and a wide range of epitaxial metallic alloy films from the corresponding mixed metal oxides. Electrodeposition, like biomineralization, is a soft solution processing method which can produce functional materials with special properties onto conducting or semiconducting solid surfaces. Paper II in this dissertation presents the electrodeposition of cobalt-substituted magnetite (CoxFe3-xO4, 0 of cobalt-substituted magnetite (CoxFe3-xO4, 0thin films and superlattices on Au single-crystalline substrates, which can be potentially used in spintronics and memory devices. Paper III in this dissertation reports the electrodeposition of crystalline cobalt oxide (Co3O4) thin films on stainless steel and Au single-crystalline substrates. The crystalline Co3O4 thin films exhibit high catalytic activity towards the oxygen evolution reaction in an alkaline solution. A possible application of the electrodeposited Co 3O4 is the fabrication of highly active and low-cost photoanodes for photoelectrochemical water-splitting cells.

  4. Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

    SciTech Connect

    Denny, Yus Rama; Firmansyah, Teguh; Oh, Suhk Kun; Kang, Hee Jae; Yang, Dong-Seok; Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol

    2016-10-15

    Highlights: • The effect of oxygen flow rate on electronic properties and local structure of tantalum oxide thin films was studied. • The oxygen deficiency induced the nonstoichiometric state a-TaOx. • A small peak at 1.97 eV above the valence band side appeared on nonstoichiometric Ta{sub 2}O{sub 5} thin films. • The oxygen flow rate can change the local electronic structure of tantalum oxide thin films. - Abstract: The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta{sup 1+}, Ta{sup 2+}, Ta{sup 3+}/Ta{sup 4+}, and Ta{sup 5+}, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

  5. Strong oxidation resistance of atomically thin boron nitride nanosheets.

    PubMed

    Li, Lu Hua; Cervenka, Jiri; Watanabe, Kenji; Taniguchi, Takashi; Chen, Ying

    2014-02-25

    Investigation of oxidation resistance of two-dimensional (2D) materials is critical for many of their applications because 2D materials could have higher oxidation kinetics than their bulk counterparts due to predominant surface atoms and structural distortions. In this study, the oxidation behavior of high-quality boron nitride (BN) nanosheets of 1-4 layers thick has been examined by heating in air. Atomic force microscopy and Raman spectroscopy analyses reveal that monolayer BN nanosheets can sustain up to 850 °C, and the starting temperature of oxygen doping/oxidation of BN nanosheets only slightly increases with the increase of nanosheet layer and depends on heating conditions. Elongated etch lines are found on the oxidized monolayer BN nanosheets, suggesting that the BN nanosheets are first cut along the chemisorbed oxygen chains and then the oxidative etching grows perpendicularly to these cut lines. The stronger oxidation resistance of BN nanosheets makes them more preferable for high-temperature applications than graphene.

  6. Identification of the oxidation state of americium by thin-layer chromatography using domestic plates

    SciTech Connect

    Molochnikova, N.P.; Myasoedov, B.F.

    1994-10-01

    Methods of precipitation, solvent extraction, ion exchange, and extraction chromatography were suggested to identify trace amounts of americium in different oxidation states. Thin-layer chromatography (TLC) has not been used previously for these purposes. At the same time, this method is widely used in the separation of small quantities of elements in different valence states. Previously, the chromatographic mobility of actinide ions on thin layers of silica gel and cellulose on Silufol plates (CSFR) and plates from Merck (Germany) was investigated. The behavior of americium in different oxidation states on domestic TLC plates in nitric acid solutions was determined to be of interest.

  7. Cathodic arc sputtering of functional titanium oxide thin films, demonstrating resistive switching

    NASA Astrophysics Data System (ADS)

    Shvets, Petr; Maksimova, Ksenia; Demin, Maxim; Dikaya, Olga; Goikhman, Alexander

    2017-05-01

    The formation of thin films of the different stable and metastable titanium oxide phases is demonstrated by cathode arc sputtering of a titanium target in an oxygen atmosphere. We also show that sputtering of titanium in vacuum yields the formation of titanium silicides on the silicon substrate. The crystal structure of the produced samples was investigated using Raman spectroscopy and X-ray diffraction. We conclude that cathode arc sputtering is a flexible method suitable for producing the functional films for electronic applications. The functionality is verified by the memory effect demonstration, based on the resistive switching in the titanium oxide thin film structure.

  8. Erbium oxide thin films on Si(100) obtained by laser ablation and electron beam evaporation

    NASA Astrophysics Data System (ADS)

    Queralt, X.; Ferrater, C.; Sánchez, F.; Aguiar, R.; Palau, J.; Varela, M.

    1995-02-01

    Erbium oxide thin films have been obtained by laser ablation and electron beam evaporation techniques on Si(100) substrates. The samples were grown under different conditions of oxygen atmosphere and substrate temperature without any oxidation process after deposition. The crystal structure has been studied by X-ray diffraction. Films obtained by laser ablation are highly textured in the [ hhh] direction, although this depends on the conditions of oxygen pressure and substrate temperature. In order to study the depth composition profile of the thin films and the interdiffusion of erbium metal and oxygen towards the silicon substrates, X-ray photoelectron spectroscopy analyses have been carried out.

  9. Investigation of optical properties of nickel oxide thin films deposited on different substrates

    NASA Astrophysics Data System (ADS)

    Nama Manjunatha, Krishna; Paul, Shashi

    2015-10-01

    Nickel oxide has been investigated for several potential applications, namely, ultraviolet detectors, electro chromic devices, displays, diodes for light emitting, transparent conductive electrode, and optoelectronic devices. These applications require an in depth analysis of nickel oxide prior to its exploration in aforementioned devices. Optical properties of materials were investigated by depositing thin film of nickel oxide on different substrates in order to understand if the choice of substrate can have effect on deducing various optical parameters and can lead to wrong conclusions. In view of this, we have investigated optical properties of nickel oxide deposited on different substrates (glass, transparent plastic, sapphire, potassium bromide, and calcium fluoride).

  10. Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

    NASA Astrophysics Data System (ADS)

    Yamada, Takahiro; Ito, Joyo; Asahara, Ryohei; Watanabe, Kenta; Nozaki, Mikito; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2017-06-01

    The impact of thin Ga-oxide (GaOx) interlayers on the electrical properties of GaN-based metal-oxide-semiconductor (MOS) devices was systematically investigated. Thin thermal oxides formed at around 900 °C were found to be beneficial for improving the electrical properties of insulator/GaN interfaces, despite the fact that thermal oxidation of GaN surfaces at high temperatures proceeds by means of grain growth. Consequently, well-behaved capacitance-voltage characteristics of SiO2/GaOx/n-GaN stacked MOS capacitors with an interface state density (Dit) as low as 1.7 × 1011 cm-2 eV-1 were demonstrated. Moreover, the Dit value was further reduced for the SiO2/GaOx/GaN capacitor with a 2-nm-thick sputter-deposited GaOx interlayer. These results clearly indicate the intrinsically superior nature of the oxide/GaN interfaces and provide plausible guiding principles for fabricating high-performance GaN-MOS devices with thin GaOx interlayers.

  11. Effects of working pressure on physical properties of tungsten-oxide thin films sputtered from oxide target

    SciTech Connect

    Riech, I.; Acosta, M.; Pena, J. L.; Bartolo-Perez, P.

    2010-03-15

    Tungsten-oxide films were deposited on glass substrates from a metal-oxide target by nonreactive radio-frequency sputtering. The authors have studied the effect that changing Ar gas pressure has on the electrical, optical, and chemical composition in the thin films. Resistivity of WO{sub 3} changed ten orders of magnitude with working gas pressure values from 20 to 80 mTorr. Thin films deposited at 20 mTorr of Ar sputtering pressure showed lower resistivity and optical transmittance. X-ray photoelectron spectroscopy (XPS) measurements revealed similar chemical composition for all samples irrespective of Ar pressure used. However, XPS analyses of the evolution of W 4f and O 1s peaks indicated a mixture of oxides dependent on the Ar pressure used during deposition.

  12. Investigation of physicochemical and tribological properties of transparent oxide semiconducting thin films based on Ti-V oxides

    NASA Astrophysics Data System (ADS)

    Mazur, M.; Sieradzka, K.; Kaczmarek, D.; Domaradzki, J.; Wojcieszak, D.; Domanowski, P.

    2013-08-01

    In this paper investigations of structural and optical properties of nanocrystalline Ti-V oxide thin films are described. The films were deposited onto Corning 7059 glass using a modified reactive magnetron sputtering method. Structural investigations of prepared Ti-V oxides with vanadium addition of 19 at. % revealed amorphous structure, while incorporation of 21 and 23 at. % of vanadium resulted in V2O5 formation with crystallites sizes of 12.7 and 32.4 nm, respectively. All prepared thin films belong to transparent oxide semiconductors due to their high transmission level of ca. 60-75 % in the visible light range, and resistivity in the range of 3.3·102-1.4·105 Ωcm. Additionally, wettability and hardness tests were performed in order to evaluate the usefulness of the films for functional coatings.

  13. Fabrication and characterization of oxide-based thin film transistors, and process development for oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Lim, Wantae

    2009-12-01

    This dissertation is focused on the development of thin film transistors (TFTs) using oxide materials composed of post-transitional cations with (n-1)d 10ns0 (n≥4). The goal is to achieve high performance oxide-based TFTs fabricated at low processing temperature on either glass or flexible substrates for next generation display applications. In addition, etching mechanism and Ohmic contact formation for oxide heterostructure (ZnO/CuCrO 2) system is demonstrated. The deposition and characterization of oxide semiconductors (In 2O3-ZnO, and InGaZnO4) using a RF-magnetron sputtering system are studied. The main influence on the resistivity of the films is found to be the oxygen partial pressure in the sputtering ambient. The films remained amorphous and transparent (> 70%) at all process conditions. These films showed good transmittance at suitable conductivity for transistor fabrication. The electrical characteristics of both top- and bottom-gate type Indium Zinc Oxide (InZnO) and Indium Gallium Zinc Oxide (InGaZnO4)-based TFTs are reported. The InZnO films were favorable for depletion-mode TFTs due to their tendency to form oxygen vacancies, while enhancement-mode devices were realized with InGaZnO4 films. The InGaZnO4-based TFTs fabricated on either glass or plastic substrates at low temperature (<100°C) exhibit good electrical properties: the saturation mobility of 5--12 cm2.V-1.s-1 and threshold voltage of 0.5--2.5V. The devices are also examined as a function of aging time in order to verify long-term stability in air. The effect of gate dielectric materials on electrical properties of InGaZnO 4-based TFTs was investigated. The use of SiNx film as a gate dielectric reduces the trap density and the roughness at the channel/gate dielectric interface compared to SiO2 gate dielectric, resulting in an improvement of device parameters by reducing scattering of trapped charges at the interface. The quality of interface is shown to have large effect on TFT performance

  14. Local anodic oxidation of superconducting NbN thin films by an atomic force microscope

    NASA Astrophysics Data System (ADS)

    Y Yang, X.; You, L. X.; Wang, X.; Zhang, L. B.; Kang, L.; Wu, P. H.

    2009-12-01

    A local anodic oxidation technique has been applied to create oxidized nanowires on superconducting NbN thin films using an atomic force microscope (AFM) with a conductive probe. The AFM surface topography shows that both the width and height of the oxidized nanowires increase with increasing applied probe voltage under a certain relative humidity and a probe scan rate. The resistances of the NbN microbridges with and without an oxidized nanowire crossing were measured, and the results indicate that the oxidized nanowires with height of more than 8 nm are fully oxidized. The R-T and I-V characteristics of the NbN microbridges with the oxide wire of less than 8 nm were also obtained and analyzed. Methods for fabricating devices such as superconducting single photon detectors and superconducting hot electron bolometer mixers using this technology are discussed.

  15. Fluorine compounds for doping conductive oxide thin films

    DOEpatents

    Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

    2013-04-23

    Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

  16. Oxidation of Light Alkanes Using Photocatalytic Thin Films

    DTIC Science & Technology

    2006-01-01

    Methods 4.2.1 Catalyst Preparation and Characterization All catalysts were prepared using sol - gel methods [26]. Binary oxides were mixed...chemical vapor deposition, sputtering, sol - gel , etc.). The versatility of TiO2 has led to numerous applications discussed in thousands of literature...Catalyst Preparation The mixed-oxide catalyst material used in this study was prepared using a sol - gel method [11] in which titania and zirconia sols

  17. MOCVD of zirconium oxide thin films: Synthesis and characterization

    NASA Astrophysics Data System (ADS)

    Torres-Huerta, A. M.; Domínguez-Crespo, M. A.; Ramírez-Meneses, E.; Vargas-García, J. R.

    2009-02-01

    The synthesis of thin films of zirconia often produces tetragonal or cubic phases, which are stable at high temperatures, but that can be transformed into the monoclinic form by cooling. In the present study, we report the deposition of thin zirconium dioxide films by metalorganic chemical vapor deposition using zirconium (IV)-acetylacetonate as precursor. Colorless, porous, homogeneous and well adherent ZrO 2 thin films in the cubic phase were obtained within the temperature range going from 873 to 973 K. The deposits presented a preferential orientation towards the (1 1 1) and (2 2 0) planes as the substrate temperature was increased, and a crystal size ranging between 20 and 25 nm. The kinetics is believed to result from film growth involving the deposition and aggregation of nanosized primary particles produced during the CVD process. A mismatch between the experimental results obtained here and the thermodynamic prediction was found, which can be associated with the intrinsic nature of the nanostructured materials, which present a high density of interfaces.

  18. Oxidative chemical vapor deposition of polyaniline thin films.

    PubMed

    Smolin, Yuriy Y; Soroush, Masoud; Lau, Kenneth K S

    2017-01-01

    Polyaniline (PANI) is synthesized via oxidative chemical vapor deposition (oCVD) using aniline as monomer and antimony pentachloride as oxidant. Microscopy and spectroscopy indicate that oCVD processing conditions influence the PANI film chemistry, oxidation, and doping level. Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) indicate that a substrate temperature of 90 °C is needed to minimize the formation of oligomers during polymerization. Lower substrate temperatures, such as 25 °C, lead to a film that mostly includes oligomers. Increasing the oxidant flowrate to nearly match the monomer flowrate favors the deposition of PANI in the emeraldine state, and varying the oxidant flowrate can directly influence the oxidation state of PANI. Changing the reactor pressure from 700 to 35 mTorr does not have a significant effect on the deposited film chemistry, indicating that the oCVD PANI process is not concentration dependent. This work shows that oCVD can be used for depositing PANI and for effectively controlling the chemical state of PANI.

  19. Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films.

    PubMed

    Sanctis, Shawn; Koslowski, Nico; Hoffmann, Rudolf; Guhl, Conrad; Erdem, Emre; Weber, Stefan; Schneider, Jörg J

    2017-06-28

    Amorphous zinc tin oxide (ZTO) thin films are accessible by a molecular precursor approach using mononuclear zinc(II) and tin(II) compounds with methoxyiminopropionic acid ligands. Solution processing of two precursor solutions containing a mixture of zinc and tin(II)-methoxyiminopropinato complexes results in the formation of smooth homogeneous thin films, which upon calcination are converted into the desired semiconducting amorphous ZTO thin films. ZTO films integrated within a field-effect transistor (FET) device exhibit an active semiconducting behavior in the temperature range between 250 and 400 °C, giving an increased performance, with mobility values between μ = 0.03 and 5.5 cm(2)/V s, with on/off ratios increasing from 10(5) to 10(8) when going from 250 to 400 °C. Herein, our main emphasis, however, was on an improved understanding of the material transformation pathway from weak to high performance of the semiconductor in a solution-processed FET as a function of the processing temperature. We have correlated this with the chemical composition and defects states within the microstructure of the obtained ZTO thin film via photoelectron spectroscopy (X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy), Auger electron spectroscopy, electron paramagnetic resonance spectroscopy, atomic force microscopy, and photoluminescence investigations. The critical factor observed for the improved performance within this ZTO material could be attributed to a higher tin concentration, wherein the contributions of point defects arising from the tin oxide within the final amorphous ZTO material play the dominant role in governing the transistor performance.

  20. Study on the Preparation and Properties of Colored Iron Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Zhao, Xianhui; Li, Changhong; Liu, Qiuping; Duan, Yandong; He, Junjing; Liu, Su; Wang, Hai; Liang, Song

    2013-03-01

    Colored iron oxide thin films were prepared using Sol-gel technique. The raw materials were tetraethyl orthosilicate (TEOS), etoh ehanol (EtOH), iron nitrate, and de-ionized water. Various properties were measured and analysed, including the colour of thin films, surface topography, UV-Visible spectra, corrosion resistance and hydrophobicity. To understand how these properties influenced the structural and optical properties of Fe2O3 thin films, Scanning Electron Microscope (SEM), UV Spectrophotometer and other facilities were employed. Many parameters influence the performance of thin films, such as film layers, added H2O content, and the amount of polydimethylsiloxane (PDMS). When the volume ratio of TEOS, EtOH and H2O was 15: 13: 1, the quality of Fe(NO3)3·9H2O was 6g, and pH value was 3, reddish and uniform Fe2O3 thin films with excellent properties were produced. Obtained thin films possessed corrosion resistance in hydrochloric acid with pH=l and the absorption edge wavelength was ~350.2nm. Different H2O contents could result in different morphologies of Fe2O3 nanoparticles. When 1.5 ml PDMS was added into the Sol, thin films possessed hydrophobiliry without dropping. Coating with different layers, thin films appeared different morphologies. Meanwhile, with the increment of film layers, the absorbance increased gradually.

  1. Self-activated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors

    PubMed Central

    Moon, Hi Gyu; Shim, Young-Soek; Kim, Do Hong; Jeong, Hu Young; Jeong, Myoungho; Jung, Joo Young; Han, Seung Min; Kim, Jong Kyu; Kim, Jin-Sang; Park, Hyung-Ho; Lee, Jong-Heun; Tuller, Harry L.; Yoon, Seok-Jin; Jang, Ho Won

    2012-01-01

    One of the top design priorities for semiconductor chemical sensors is developing simple, low-cost, sensitive and reliable sensors to be built in handheld devices. However, the need to implement heating elements in sensor devices, and the resulting high power consumption, remains a major obstacle for the realization of miniaturized and integrated chemoresistive thin film sensors based on metal oxides. Here we demonstrate structurally simple but extremely efficient all oxide chemoresistive sensors with ~90% transmittance at visible wavelengths. Highly effective self-activation in anisotropically self-assembled nanocolumnar tungsten oxide thin films on glass substrate with indium-tin oxide electrodes enables ultrahigh response to nitrogen dioxide and volatile organic compounds with detection limits down to parts per trillion levels and power consumption less than 0.2 microwatts. Beyond the sensing performance, high transparency at visible wavelengths creates opportunities for their use in transparent electronic circuitry and optoelectronic devices with avenues for further functional convergence. PMID:22905319

  2. Theoretical Investigation of Supported Utra-Thin Cobalt/Nickel/Iron/Manganese Oxides

    NASA Astrophysics Data System (ADS)

    Bajdich, Michal; García Melchor, Max; Vojvodic, Alexandra

    In the last decade, a number of experiments have shown that ultra-thin layers of transition metal oxides (TMOs) can be stabilized when interfaced with precious metal supports such as Au(111) and Pt(111) or Ir(100). Moreover, gold supported Co/Ni/Mn-based catalysts have been experimentally proven to exhibit higher oxygen evolution reaction (OER) activities than other metal supported oxide catalysts. However, the synergistic effect of contact with gold support is yet to be fully understood. In this talk, I will report on our recent investigation of thermodynamic stability and and high water reactivity of ultra-thin cobalt oxide nanoislands supported on Au(111). Furthermore, the stability trends, scaling of the metal-support interaction and charge transfer of several Mn/Fe/Co/Ni supported oxides on all FCC(111) metals will be analyzed. The type and role of different edge sites for the OER activity of these nanoislands will be discussed.

  3. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition

    PubMed Central

    Haniam, P.; Kunsombat, C.; Chiangga, S.; Songsasen, A.

    2014-01-01

    Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures. PMID:24672354

  4. High resolution Fowler-Nordheim field emission maps of thin silicon oxide layers

    NASA Astrophysics Data System (ADS)

    Ruskell, Todd G.; Workman, Richard K.; Chen, Dong; Sarid, Dror; Dahl, Sarah; Gilbert, Stephen

    1996-01-01

    An improved method for characterizing thin oxide films using Fowler-Nordheim field emission is reported. The method uses a conducting-tip atomic force microscope with dual feedback systems, one for the topography and a second for the field emission bias voltage. Images of the voltage required to maintain a 10 pA emission current through a 3 nm oxide film thermally grown on p-type Si(100) demonstrate a spatial resolution of 8 nm.

  5. Synthesis of cobalt oxides thin films fractal structures by laser chemical vapor deposition.

    PubMed

    Haniam, P; Kunsombat, C; Chiangga, S; Songsasen, A

    2014-01-01

    Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures.

  6. Oxidation-temperature dependence of the optical properties of ZnO thin films grown on corning glass by oxidation of metallic Zn

    NASA Astrophysics Data System (ADS)

    Park, Seonhee; Nam, Giwoong; Kim, Younggyu; Kim, Byunggu; Park, Youngbin; Lee, Wookbin; Moon, Jiyun; Kim, Dongwan; Kim, Mincheol; Jeon, Woosung; Jeon, Minhyun; Song, Hanjung; Han, Ki-Ho; Sohn, Keun Yong; Lee, Woo-kyoung; Leem, Jae-Young

    2015-10-01

    We investigated the structural and the optical properties of ZnO thin films formed on Corning glass by the oxidation of Zn thin films, which were deposited by using thermal evaporation and were then oxidized at 300 - 600 °C. The grain size of the ZnO thin films increased and the grains became more densely packed with increasing oxidation temperature. In the photoluminescence (PL) spectra of the ZnO thin films, the intensity of the near-band-edge peak increased with increasing temperature to 500 °C, but decreased gradually with further increases in the temperature. The transmittances of the ZnO thin films formed by oxidation at 400 and 500 °C were higher than 85% in the visible-light region. Finally, the Urbach energy decreased significantly and the optical band gap exhibited a blue shift with increasing oxidation temperature from 300 to 400 °C.

  7. Fabrication of (110)-one-axis-oriented perovskite-type oxide thin films and their application to buffer layer

    NASA Astrophysics Data System (ADS)

    Sato, Tomoya; Ichinose, Daichi; Kimura, Junichi; Inoue, Takaaki; Mimura, Takanori; Funakubo, Hiroshi; Uchiyama, Kiyoshi

    2016-10-01

    BaCe0.9Y0.1O3-δ (BCYO) and SrZr0.8Y0.2O3-δ (SZYO) thin films of perovskite-type oxides were deposited on (111)Pt/TiO x /SiO2/(100)Si substrates. X-ray diffraction patterns showed that the (110)-oriented BCYO and SZYO thin films were grown on (111)Pt/Si substrates directly without using any buffer layers. Thin films of SrRuO3 (SRO), a conductive perovskite-type oxide, were also deposited on those films and highly (110)-oriented SRO thin films were obtained. We believe that this (110)-oriented SRO works as a buffer layer to deposit (110)-oriented perovskite-type ferroelectric oxide thin films as well as a bottom electrode and can modify the ferroelectric properties of the oxide thin films by controlling their crystallographic orientations.

  8. Induction of superconductivity of a La2CuO4 thin film chemically oxidized by NaClO

    NASA Astrophysics Data System (ADS)

    Wang, C. C.; Cui, M. L.; Zheng, X.; Zhu, J.

    High-quality, c-axis-oriented La2CuO4 thin films have been fabricated by the pulsed laser ablation technique. Superconductivity has been successfully induced in the films after chemical oxidation using sodium hypochlorite solution as oxidizing agent. The structural properties, surface morphology, and electrical resistivity before and after oxidation are compared. In addition, the oxidation mechanism is discussed.

  9. Properties of anodic oxides grown on a hafnium–tantalum–titanium thin film library

    PubMed Central

    Mardare, Andrei Ionut; Ludwig, Alfred; Savan, Alan; Hassel, Achim Walter

    2014-01-01

    A ternary thin film combinatorial materials library of the valve metal system Hf–Ta–Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott–Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven. PMID:27877648

  10. Properties of anodic oxides grown on a hafnium-tantalum-titanium thin film library

    NASA Astrophysics Data System (ADS)

    Ionut Mardare, Andrei; Ludwig, Alfred; Savan, Alan; Hassel, Achim Walter

    2014-02-01

    A ternary thin film combinatorial materials library of the valve metal system Hf-Ta-Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott-Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven.

  11. Characterization and properties of multicomponent oxide thin films with gasochromic effect

    NASA Astrophysics Data System (ADS)

    Domaradzki, Jaroslaw; Baniewicz, Kosma; Mazur, Michał; Wojcieszak, Damian; Kaczmarek, Danuta

    2013-07-01

    In this work structural, optical and surface properties of gasochromic thin films based on mixtures of selected transition metal oxides have been outlined. Two sets of thin films were prepared by reactive magnetron sputtering from four-component metallic mosaic targets containing Ti, V ,Ta as a base and W or Nb as a fourth material. Neither Pd nor Pt metals were used as a catalyst. X-ray diffraction investigations revealed, that all prepared thin films were amorphous while application of x-ray photoelectron spectroscopy studies show presence of TiO2, V2O5, Ta2O5, and WO3 or Nb2O5 oxides at the surface depending on the thin films composition. Gasochromic properties were investigated through observations of the change in optical transmission response of the films exposed to reducing or oxidizing gas. Dynamic optical responses of samples were collected at room temperature. Depending on composition of the sample being investigated the change in optical transmission at room temperature ranged up to about 28 %. Based on optical transmission refraction and extinction indexes were calculated using reverse synthesis method. The obtained results are very promising for utilization of prepared thin films in optical gas sensing devices.

  12. Magnetoelectric hexaferrite thin film growth on oxide conductive layer for applications at low voltages

    NASA Astrophysics Data System (ADS)

    Zare, Saba; Izadkhah, Hessam; Vittoria, Carmine

    2016-08-01

    Magnetoelectric (ME) M-type hexaferrite thin films were deposited on conductive oxide layer of Indium-Tin Oxide (ITO) in order to lower applied voltages to observe ME effects at room temperature. The thin film of ME hexaferrites, SrCo2Ti2Fe8O19/ITO buffer layer, were deposited on sapphire substrate using Pulsed Laser Deposition (PLD) technique. The film exhibited ME effects as confirmed by vibrating sample magnetometer (VSM) in voltages as low as 0.5 V. Without the oxide conductive layer the required voltages to observe ME effects were typically 500 V and higher. The thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance. We measured saturation magnetization of 1064 G, and coercive field of 20 Oe for these thin films. The change rate in remanence magnetization was measured with the application of DC voltage at room temperature and it gave rise to changes in remanence in the order of 15% with the application of only 0.5 V (DC voltage). We deduced a ME coupling, α, of 5×10-10 s m-1 in SrCo2Ti2Fe8O19 thin films.

  13. Enhanced Luminescence in Epitaxial Oxide Thin-Film Phosphors

    SciTech Connect

    Lee, Y.E.; Norton, D.P.; Budai, J.D.; Park, C.; Kim, M.; Pennycook, S.J.; Rack, P.D.; Potter, M.D.

    1999-11-08

    Undoped and Mn-doped ZnGa{sub 2}O{sub 4} thin-film phosphors were grown using pulsed laser ablation on (100) MgO single crystal and glass substrates. X-ray results showed the films on (100) MgO are well aligned both out-of plane and in-plane. Epitaxial films show superior photoluminescent intensity as compared to randomly oriented polycrystalline films, indicating that intragranular crystallinity strongIy influences luminescent properties. Li-doped ZnGa{sub 2}O{sub 4} exhibited significantly enhanced photoluminescence intensity.

  14. PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Yu, Wonjong; Cho, Gu Young; Hong, Soonwook; Lee, Yeageun; Kim, Young Beom; An, Jihwan; Cha, Suk Won

    2016-10-01

    Yttria-stabilized zirconia (YSZ) thin film electrolyte deposited by plasma enhanced atomic layer deposition (PEALD) was investigated. PEALD YSZ-based bi-layered thin film electrolyte was employed for thin film solid oxide fuel cells on nanoporous anodic aluminum oxide substrates, whose electrochemical performance was compared to the cell with sputtered YSZ-based electrolyte. The cell with PEALD YSZ electrolyte showed higher open circuit voltage (OCV) of 1.0 V and peak power density of 182 mW cm-2 at 450 °C compared to the one with sputtered YSZ electrolyte(0.88 V(OCV), 70 mW cm-2(peak power density)). High OCV and high power density of the cell with PEALD YSZ-based electrolyte is due to the reduction in ohmic and activation losses as well as the gas and electrical current tightness.

  15. Characterization of monolayer formation on aluminum-doped zinc oxide thin films.

    PubMed

    Rhodes, Crissy L; Lappi, Simon; Fischer, Daniel; Sambasivan, Sharadha; Genzer, Jan; Franzen, Stefan

    2008-01-15

    The optical and electronic properties of aluminum-doped zinc oxide (AZO) thin films on a glass substrate are investigated experimentally and theoretically. Optical studies with coupling in the Kretschmann configuration reveal an angle-dependent plasma frequency in the mid-IR for p-polarized radiation, suggestive of the detection of a Drude plasma frequency. These studies are complemented by oxygen depletion density functional theory studies for the calculation of the charge carrier concentration and plasma frequency for bulk AZO. In addition, we report on the optical and physical properties of thin film adlayers of n-hexadecanethiol (HDT) and n-octadecanethiol (ODT) self-assembled monolayers (SAMs) on AZO surfaces using reflectance FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), contact angle, and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Our characterization of the SAM deposition onto the AZO thin film reveals a range of possible applications for this conducting metal oxide.

  16. Characterization of Monolayer Formation on Aluminum-Doped Zinc Oxide Thin Films

    SciTech Connect

    Rhodes,C.; Lappi, S.; Fischer, D.; Sambasivan, S.; Genzer, J.; Franzen, S.

    2008-01-01

    The optical and electronic properties of aluminum-doped zinc oxide (AZO) thin films on a glass substrate are investigated experimentally and theoretically. Optical studies with coupling in the Kretschmann configuration reveal an angle-dependent plasma frequency in the mid-IR for p-polarized radiation, suggestive of the detection of a Drude plasma frequency. These studies are complemented by oxygen depletion density functional theory studies for the calculation of the charge carrier concentration and plasma frequency for bulk AZO. In addition, we report on the optical and physical properties of thin film adlayers of n-hexadecanethiol (HDT) and n-octadecanethiol (ODT) self-assembled monolayers (SAMs) on AZO surfaces using reflectance FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), contact angle, and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Our characterization of the SAM deposition onto the AZO thin film reveals a range of possible applications for this conducting metal oxide.

  17. Metal oxidation kinetics and the transition from thin to thick films.

    PubMed

    Xu, Zhijie; Rosso, Kevin M; Bruemmer, Stephen

    2012-11-14

    We report an investigation of growth kinetics and transition from thin to thick films during metal oxidation. In the thin film limit (<20 nm), Cabrera and Mott's theory is usually adopted by explicitly considering ionic drift through the oxide in response to electric fields, where the growth kinetics follow an inverse logarithmic law log(dl/dt) is proportional to 1/l. It is generally accepted that Wagner's theory, involving self-diffusion, is valid only in the limit of thick film regime (>1 μm) and leads to parabolic growth kinetics dl/dt is proportional to 1/l, where l is the oxide film thickness. Theory presented here unifies the two models and provides a complete description of oxidation including the transition from thin to thick film. The range of validity of Cabrera and Mott's theory and Wagner's theory can be well defined in terms of the Debye-Hückel screening length. The transition from drift-dominated ionic transport for thin film to diffusion-dominated transport for thick film is found to strictly follow the direct logarithmic law log(dl/dt) is proportional to -l that is frequently observed in many experiments.

  18. Metal Oxidation Kinetics and the Transition from Thin to Thick Films

    SciTech Connect

    Xu, Zhijie; Rosso, Kevin M.; Bruemmer, Stephen M.

    2012-09-01

    We report an investigation of growth kinetics and transition from thin to thick films during metal oxidation. In the thin film limit (< 20 nm), Cabrera and Mott’s theory is usually adopted by explicitly considering ionic drift through the oxide in response to electric fields, where the growth kinetics follow an inverse logarithmic law . It is generally accepted that Wagner’s theory, involving self-diffusion, is valid only in the limit of thick film regime (>1μm) and leads to parabolic growth kinetics , where l is the oxide film thickness. Theory presented here unifies the two models and provides a complete description of oxidation including the transition from thin to thick film. The range of validity of Cabrera and Mott’s theory and Wagner’s theory can be well defined in terms of the Debye-Hückel screening length. The transition from drift-dominated ionic transport for thin film to diffusion-dominated transport for thick film is found to strictly follow the direct logarithmic law that is frequently observed in many experiments.

  19. Extremely thin bilayer electrolyte for solid oxide fuel cells (SOFCs) fabricated by chemical solution deposition (CSD).

    PubMed

    Oh, Eun-Ok; Whang, Chin-Myung; Lee, Yu-Ri; Park, Sun-Young; Prasad, Dasari Hari; Yoon, Kyung Joong; Son, Ji-Won; Lee, Jong-Ho; Lee, Hae-Weon

    2012-07-03

    An extremely thin bilayer electrolyte consisting of yttria-stabilized zirconia (YSZ) and gadolinia-doped ceria (GDC) is successfully fabricated on a sintered NiO-YSZ substrate. Major processing flaws are effectively eliminated by applying local constraints to YSZ nanoparticles, and excellent open circuit voltage and cell performance are demonstrated in a solid oxide fuel cell (SOFC) at intermediate operating temperatures.

  20. High mobility yttrium doped cadmium oxide thin films

    NASA Astrophysics Data System (ADS)

    Kelley, Kyle P.; Sachet, Edward; Shelton, Christopher T.; Maria, Jon-Paul

    2017-07-01

    Donor doped CdO thin films on c-plane sapphire are prepared by reactive co-sputtering from Cd-metal and Y-metal targets which are driven using pulsed-dc and RF power respectively. Intrinsic CdO exhibits a carrier density of 1.8 × 1019 cm-3 and a mobility of 330 cm2 V-1 s-1. By increasing the Y-flux, carrier density values can be increased smoothly and reproducibly to a maximum value of 3.3 × 1020 cm-3. Mobility increases with Y flux, and exhibits a broad plateau between approximately 5 × 1019 cm-3 and 2 × 1020 cm-3. Higher carrier concentrations produce a sharp drop in mobility. The increase in mobility is attributed to a reduction of intrinsic donors (i.e., oxygen vacancies) with increasing carrier density while the ultimate decrease in mobility results from a combination of factors including cadmium vacancies, reduced crystal quality, and smaller crystallite sizes, all of which accompany carrier density values greater than the mid 1020 cm-3 range. This work demonstrates that CdO thin films can be prepared by magnetron sputtering with transport properties and crystal quality that are comparable to those grown using molecular beam epitaxy.

  1. Memory switches based on metal oxide thin films

    NASA Technical Reports Server (NTRS)

    Ramesham, Rajeshuni (Inventor); Thakoor, Anilkumar P. (Inventor); Lambe, John J. (Inventor)

    1990-01-01

    MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

  2. Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique

    SciTech Connect

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong

    2011-03-30

    Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin-film sensor applications.

  3. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

    PubMed Central

    Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang

    2015-01-01

    In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm), carrier concentration (4.1 × 1021 cm−3), carrier mobility (10 cm2/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3) with a high figure of merit (81.1 × 10−3 Ω−1) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices. PMID:28793575

  4. Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

    PubMed

    Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

    2014-11-01

    The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Pseudo capacitive performance of copper oxide thin films grown by RF sputtering

    SciTech Connect

    Reddy, B. Purusottam; Ganesh, K. Sivajee; Hussain, O. M.

    2015-06-24

    Thin films of Copper Oxide were prepared by radio frequency magnetron sputtering on steel substrates maintained at 250°C under different RF powers ranging from 150W to 250W by keeping the sputtering pressure at 5.7×10{sup −3} mbar and O{sub 2}:Ar ratio of 1:7. The influence of RF power on the pseudo capacitive performance of thin films was studied. The X-ray diffraction studies and Raman studies indicates that all the thin films exhibits CuO phase. The electrochemical studies was done by using three electrode configuration with platinum as reference electrode. From the cyclic voltammetry studies a high rate pseudocapacitance of 227 mFcm{sup −2} at 0.5 mVs{sup −1} and 77% of capacity retention after 1000 cycles was obtained for the CuO thin films prepared at an RF power of 220W.

  6. Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

    NASA Astrophysics Data System (ADS)

    Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

    2017-07-01

    In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

  7. Naphthacene Based Organic Thin Film Transistor With Rare Earth Oxide

    SciTech Connect

    Konwar, K.; Baishya, B.

    2010-12-01

    Naphthacene based organic thin film transistors (OTFTs) have been fabricated using La{sub 2}O{sub 3}, as the gate insulator. All the OTFTs have been fabricated by the process of thermal evaporation in vacuum on perfectly cleaned glass substrates with aluminium as source-drain and gate electrodes. The naphthacene film morphology on the glass substrate has been studied by XRD and found to be polycrystalline in nature. The field effect mobility, output resistance, amplification factor, transconductance and gain bandwidth product of the OTFTs have been calculated by using theoretical TFT model. The highest value of field effect mobility is found to be 0.07x10{sup -3} cm{sup 2}V{sup -1}s{sup -1} for the devices annealed in vacuum at 90 deg. C for 5 hours.

  8. Thermochromic vanadium oxide thin films: Electronic and optical properties

    NASA Astrophysics Data System (ADS)

    Niklasson, G. A.; Li, S.-Y.; Granqvist, C. G.

    2014-11-01

    Vanadium dioxide, VO2, is a widely studied thermochromic material with potential applications in energy efficient window technology. It undergoes a first-order metal-to- insulator transition, accompanied by a crystal structure transformation from monoclinic to tetragonal rutile, at a critical temperature of 68 °C. Below this temperature, VO2 is semiconducting and infrared transmitting whereas it is metallic and infrared reflecting above the transition temperature. However, in order to achieve significant thermochromic switching, the luminous transmittance of thin films will typically be less than 50%. Here we report on recent research to improve the luminous transmittance as well as the transmittance change at the transition temperature. We systematically evaluate the effect of antireflection coatings, doping with Mg and the performance of coatings comprising thermochromic nanoparticles in a transparent matrix. The last option is shown to give the best performance and holds great promise for practical applications.

  9. Ordered fragmentation of oxide thin films at submicron scale

    PubMed Central

    Guo, L.; Ren, Y.; Kong, L. Y.; Chim, W. K.; Chiam, S. Y.

    2016-01-01

    Crack formation is typically undesirable as it represents mechanical failure that compromises strength and integrity. Recently, there have also been numerous attempts to control crack formation in materials with the aim to prevent or isolate crack propagation. In this work, we utilize fragmentation, at submicron and nanometre scales, to create ordered metal oxide film coatings. We introduce a simple method to create modified films using electroplating on a prepatterned substrate. The modified films undergo preferential fragmentation at locations defined by the initial structures on the substrate, yielding ordered structures. In thicker films, some randomness in the characteristic sizes of the fragments is introduced due to competition between crack propagation and crack creation. The method presented allows patterning of metal oxide films over relatively large areas by controlling the fragmentation process. We demonstrate use of the method to fabricate high-performance electrochromic structures, yielding good coloration contrast and high coloration efficiency. PMID:27748456

  10. Photo-Activated Synthesis of Functional Oxide Thin Films

    DTIC Science & Technology

    2010-03-01

    o (d200 = 2.53 Å), corresponding to lattice constant ~ 5.07 Å. In cubic fluorite structure, lattice parameter (d) can be calculated from ionic...noted that aliovalently introduced oxygen vacancies have an effect on anion ionic radius, therefore lattice constant in doped fluorite structure cannot...denotes the dopant content.[26] This relation indicates that oxygen deficiency decreases the lattice constant of fluorite -structured oxides. It is

  11. Cadmium-Tin Oxide Transparent Conductive Thin Films

    NASA Astrophysics Data System (ADS)

    Stapinski, T.; Leja, E.; Marszalek, K.

    1986-09-01

    Cadmium-tin oxide (CTO) films have been prepared by d.c. reactive sputtering of Cd-Sn alloy targets in Ar-02 gas mixture. The electrical, optical and structural properties as well as the chemical composition of transparent conducting CTO films were found to depend on sputtering conditions. The value of optical band gap, optical constants, effective mass and relaxation time of electrons have been determined.

  12. Nonlinear optical characterization of graphite oxide thin film by open aperture Z-scan technique

    SciTech Connect

    Sreeja, V. G.; Reshmi, R.; Devasia, Sebin; Anila, E. I.; Cheruvalathu, Ajina

    2016-05-23

    In this paper we explore the structural characterization of graphite oxide powder prepared from graphite powder by oxidation via modified Hummers method. The nonlinear optical properties of the spin coated graphite oxide thin film is also explored by open aperture Z-Scan technique. Structural and physiochemical properties of the samples were investigated with the help of Fourier Transform Infrared Spectroscopy (FTIR) and Raman Spectroscopy (Raman).The results of FT-IR and Raman spectroscopy showed that the graphite is oxidized by strong oxidants and the oxygen atoms are introduced into the graphite layers forming C=C, O-H and –C-H groups. The synthesized sample has good crystalline nature with lesser defects. The nonlinear optical property of GO thin film was studied by open aperture Z-Scan technique using Q-switched Nd-Yag Laser at 532 nm. The Z-scan plot showed that the investigated GO thin film has saturable absorption behavior. The nonlinear absorption coefficient and saturation intensity were also estimated to explore its applications in Q switched mode locking laser systems.

  13. Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

    NASA Astrophysics Data System (ADS)

    Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin

    2017-02-01

    This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm2/V·s) compared with the ITZO-only TFTs (∼34 cm2/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and -2.39 V compared with 6.10 and -6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of EA were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO2 reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

  14. Thin-film solid-oxide fuel cells

    SciTech Connect

    Jankowski, A.F.

    1997-05-01

    Fuel cells are energy conversion devices that would save billions of dollars in fuel costs alone each year in the United States if they could be implemented today for stationary and transportation applications (1-5). There are a wide variety of fuel cells available, e.g. molten carbonate, phosphoric acid, proton exchange membrane and solid-oxide. However, solid-oxide fuel cells (SOFCS) are potentially more efficient and less expensive per kilowatt of power in comparison to other fuel cells. For transportation applications, the energy efficiency of a conventional internal combustion engine would be increased two-fold as replaced with a zero-emission SOFC. The basic unit of a SOFC consists of an anode and cathode separated by an oxygen-ion conducting, electrolyte layer. Manifolded stacks of fuel cells, with electrical interconnects, enable the transport and combination of a fuel and oxidant at elevated temperature to generate electrical current. Fuel cell development has proceeded along different paths based on the configuration of the anode-electrolyte-cathode. Various configurations include the tubular, monolithic and planar geometries. A planar geometry for the anode-electrolyte-cathode accompanied by a reduction in layer thickness offers the potential for high power density. Maximum power densities will require yet additional innovations in the assembly of fuel cell stacks with all of the manifolding stipulations for gas flow and electrical interconnects.

  15. Oxide nanostructures hyperbranched with thin and hollow metal shells for high-performance nanostructured battery electrodes.

    PubMed

    Xia, Xinhui; Xiong, Qinqin; Zhang, Yongqi; Tu, Jiangping; Ng, Chin Fan; Fan, Hong Jin

    2014-06-25

    High-performance electrochemical energy storage (EES) devices require the ability to modify and assemble electrode materials with superior reactivity and structural stability. The fabrication of different oxide/metal core-branch nanoarrays with adjustable components and morphologies (e.g., nanowire and nanoflake) is reported on different conductive substrates. Hollow metal branches (or shells) wrapped around oxide cores are realized by electrodeposition using ZnO nanorods as a sacrificial template. In battery electrode application, the thin hollow metal branches can provide a mechanical protection of the oxide core and a highly conductive path for charges. As a demonstration, arrays of Co3O4/Ni core-branch nanowires are evaluated as the anode for lithium ion batteries. The thin metal branches evidently improve the electrochemical performance with higher specific capacity, rate capability, and capacity retention than the unmodified Co3O4 counterparts. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Formation of surface oxides and Ag2O thin films with atomic oxygen on Ag(111)

    NASA Astrophysics Data System (ADS)

    Derouin, Jonathan; Farber, Rachael G.; Heslop, Stacy L.; Killelea, Daniel R.

    2015-11-01

    The nature of the oxygen species adsorbed to silver surfaces is a key component of the heterogeneously catalyzed epoxidation of ethylene and partial oxidation of methanol over silver catalysts. We report the formation of two different silver-oxygen species depending on the flux and energy of incident gas-phase oxygen atoms on an Ag(111) surface. A combination of surface science techniques was used to characterize the oxidized surfaces. Atomic oxygen was generated with an Ir filament; lower temperatures created surface oxides previously reported. When O was deposited with a higher filament temperature, the surface became highly corrugated, little subsurface oxygen was observed, and thin layers of Ag2O were likely formed. These results show that the energy and flux of oxygen are important parameters in the chemical identity and abundance of oxygen on silver surfaces and suggest that formation of the Ag2O thin film hinders formation of subsurface oxygen.

  17. HRTEM image simulations for the study of ultra-thin gate oxides

    SciTech Connect

    Taylor, Seth T.; Mardinly, John; O'Keefe, Michael A.

    2001-07-17

    We have performed high resolution transmission electron microscope (HRTEM) image simulations to qualitatively assess the visibility of various structural defects in ultra-thin gate oxides of MOSFET devices, and to quantitatively examine the accuracy of HRTEM in performing gate oxide metrology. Structural models contained crystalline defects embedded in an amorphous 16 {angstrom}-thick gate oxide. Simulated images were calculated for structures viewed in cross-section. Defect visibility was assessed as a function of specimen thickness and defect morphology, composition, size and orientation. Defect morphologies included asperities lying on the substrate surface, as well as ''bridging'' defects connecting the substrate to the gate electrode. Measurements of gate oxide thickness extracted from simulated images were compared to actual dimensions in the model structure to assess TEM accuracy for metrology. The effects of specimen tilt, specimen thickness, objective lens defocus and coefficient of spherical aberration (C{sub s}) on measurement accuracy were explored for nominal 10{angstrom} gate oxide thickness. Results from this work suggest that accurate metrology of ultra-thin gate oxides (i.e. limited to several per cent error) is feasible on a consistent basis only by using a C{sub s}-corrected microscope. However, fundamental limitations remain for characterizing defects in gate oxides using HRTEM, even with the new generation of C{sub s}-corrected microscopes.

  18. Low-Temperature UV-Assisted Fabrication of Metal Oxide Thin Film Transistor

    NASA Astrophysics Data System (ADS)

    Zhu, Shuanglin

    Solution processed metal oxide semiconductors have attracted intensive attention in the last several decades and have emerged as a promising candidate for the application of thin film transistor (TFT) due to their nature of transparency, flexibility, high mobility, simple processing technique and potential low manufacturing cost. However, metal oxide thin film fabricated by solution process usually requires a high temperature (over 300 °C), which is above the glass transition temperature of some conventional polymer substrates. In order to fabricate the flexible electronic device on polymer substrates, it is necessary to find a facile approach to lower the fabrication temperature and minimize defects in metal oxide thin film. In this thesis, the electrical properties dependency on temperature is discussed and an UV-assisted annealing method incorporating Deep ultraviolet (DUV)-decomposable additives is demonstrated, which can effectively improve electrical properties solution processed metal oxide semiconductors processed at temperature as low as 220 °C. By studying a widely used indium oxide (In2O3) TFT as a model system, it is worth noted that compared with the sample without UV treatment, the linear mobility and saturation mobility of UV-annealing sample are improved by 56% and 40% respectively. Meanwhile, the subthreshold swing is decreased by 32%, indicating UV-treated device could turn on and off more efficiently. In addition to pure In2O3 film, the similar phenomena have also been observed in indium oxide based Indium-Gallium-Zinc Oxide (IGZO) system. These finding presented in this thesis suggest that the UV assisted annealing process open a new route to fabricate high performance metal oxide semiconductors under low temperatures.

  19. Enhanced electrochemical characteristics of lithium manganese oxide thin film cathodes for lithium-ion rechargeable microbatteries

    NASA Astrophysics Data System (ADS)

    Kim, Won-Seok

    Spinel LiMn2O4 (average oxidation state of Mn = 3.5) thin film has been introduced for a promising cathode of thin film lithium-ion microbatteries because of its advantages over other cathodes. Thus, many research groups have been investigating the thin film lithium manganese oxide cathode using several different techniques but only a few of them achieved acceptable electrochemical properties required for a thin film cathode for 4 V region. However, for 3 V application the wide applications of LiMn2O 4 film as a cathode in rechargeable microbatteries have been restricted by electrochemically unfavorable facts such as capacity fade on cycling and poor rate capability at high rates. In this study, we examined the mechanisms responsible for capacity fade on cycling and rate capability of LiMn 2O4 thin film cathodes with the help of pulsed laser deposition (PLD) technique. In an attempt to address these issues, a three-part experimental procedure has been designed to look at the effect of structure and compositions of the thin film cathodes on their electrochemical characteristics. First, the effect of growth temperature of the thin film cathodes has been investigated. Next, LiMn2O4 thin film cathodes doped with aluminum, which replaces Mn3+ in the spinet structure, have been synthesized and characterized as a function of the amount of aluminum substituted. Finally, ultraviolet radiation was added to a PLD system for in situ ultraviolet-assisted PLD (UVPLD) growth of cathode films. Through the addition of ultraviolet radiation, highly reactive oxygen species are generated which alter the oxygenation conditions and dynamically alter the films properties such as crystallinity and composition. A variety of characterization techniques indicate that LiMn2O 4 thin film cathodes grown at 400˜500°C exhibit the optimized electrochemical characteristics in terms of capacity, capacity retention, and rate capability. Al-doped LiMn2O4 thin films show a more stable structure

  20. Methods to protect and recover work function of air exposed transition metal oxide thin films

    NASA Astrophysics Data System (ADS)

    Irfan, Irfan; Wang, Chenggong; Turinske, Alexander J.; Gao, Yongli

    2012-09-01

    Insertion of high work function (WF) transition metal oxide (TMO) layers between the anode and the hole transport layer is established to substantially enhance the performance of organic light emitting diodes (OLED). The high WF of transition metal oxide layer has been demonstrated to be the most crucial for the enhancement. The WF of a TMO layer decreases substantially with air exposure, and noticeably by the ambient even inside a low vacuum system. In the present work we discuss various methods to protect and recover the high WF after a TMO thin film has been exposed to air. We report covering a thin organic layer on top of MoOx to protect the high work function. We found that a thin layer of 1-2 nm organic layer was sufficient to protect the work function of MoOx thin film underneath. We further report methods to recover already decreased TMO WF due to air exposure. We performed oxygen plasma cleaning of air exposed MoOx film and found out that oxygen plasma could substantially recover the WF of as deposited MoOx film. We also performed annealing of air exposed MoOx film inside an ultra high vacuum system and observed a thin layer of oxygenrich adsorbate layer, which desorbed upon annealing that in turn substantially recovered the MoOx WF. We discuss the vacuum annealing and the effect of resulting surface on the interface energy level alignment.

  1. Growth and characterization of single phase Cu2O by thermal oxidation of thin copper films

    NASA Astrophysics Data System (ADS)

    Choudhary, Sumita; Sarma, J. V. N.; Gangopadhyay, Subhashis

    2016-04-01

    We report a simple and efficient technique to form high quality single phase cuprous oxide films on glass substrate using thermal evaporation of thin copper films followed by controlled thermal oxidation in air ambient. Crystallographic analysis and oxide phase determination, as well as grain size distribution have been studied using X-ray diffraction (XRD) method, while scanning electron microscopy (SEM) has been utilized to investigate the surface morphology of the as grown oxide films. The formation of various copper oxide phases is found to be highly sensitive to the oxidation temperature and a crystalline, single phase cuprous oxide film can be achieved for oxidation temperatures between 250°C to 320°C. Cu2O film surface appeared in a faceted morphology in SEM imaging and a direct band gap of about 2.1 eV has been observed in UV-visible spectroscopy. X-ray photoelectron spectroscopy (XPS) confirmed a single oxide phase formation. Finally, a growth mechanism of the oxide film has also been discussed.

  2. A novel thin film solid oxide fuel cell for microscale energy conversion

    SciTech Connect

    Jankowiski, A F; Morse, J D

    1999-05-01

    A novel approach for the fabrication and assembly of a solid oxide fuel cell system is described which enables effective scaling of the fuel delivery, mainfold, and fuel cell stack components for applications in miniature and microscale energy conversion. Electrode materials for solid oxide fuel cells are developed using sputter deposition techniques. A thin film anode is formed by codeposition of nickel and yttria-stabilized zirconia (YSZ). This approach provides a mixed conducting interfacial layer between the nickel electrode and electrolyte layer. Similarly, a thin film cathode is formed by co-deposition of silver and yttria-stabilized zirconia. Additionally, sputter deposition of yttria-stabilized zirconia thin film electrolyte enables high quality, continuous films to be formed having thickness on the order of 1-2 {micro}m. This will effectively lower the temperature of operation for the fuel cell stack significantly below the traditional ranges at which solid oxide electrolyte systems are operated (600--1000 C), thereby rendering this fuel cell system suitable for miniaturization. Scaling towards miniaturization is accomplished by utilizing novel micromaching approaches which allow manifold channels and fuel delivery system to be formed within the substrate which the thin film fuel cell stack is fabricated on, thereby circumventing the need for bulky manifold components which are not directly scalable.

  3. Optimization of Dimensionless Figure of Merit in Oxide Thin Film Thermoelectrics

    NASA Astrophysics Data System (ADS)

    Osborne, Daniel; Huxtable, Scott; Tiwari, Ashutosh; Abiade, Jeremiah

    2010-03-01

    The ability of uniquely functional thermoelectric materials to convert waste heat directly into electricity is critical considering the global energy economy. Profitable, energy-efficient thermoelectrics possess thermoelectric figures of merit ZT >= 1. We examined the effect of metal nanoparticle -- oxide film interfaces on the thermal conductivity κ and Seebeck coefficient S in bilayer and multilayer thin film oxide thermoelectrics in an effort to improve the dimensionless figure of merit ZT. Since a thermoelectric's figure of merit ZT is directly proportional to S/κ, reducing κ and increasing S are key strategies to optimize ZT. We reduced κ by phonon scattering due to the inclusion of metal nanoparticles in the bulk of the thermoelectric thin film, and increased S due to energy-dependent electron scattering at the metal - oxide interfaces. Doped strontium titanate (STO) thin film/Au nanoparticle composites were synthesized by alternate ablation of Au and Nb-doped STO targets during pulsed laser deposition. Characterization of the thermoelectric films involve XRD, XPS, and TEM analyses, Seebeck coefficient measurements, and also measurements of the thermal conductivity via time-domain thermoreflectance. The measured thermal conductivities and Seebeck coefficients of the thin films shows a strong dependence on the nanoscale interfaces of the films.

  4. Investigations on bactericidal properties of molybdenum-tungsten oxides combinatorial thin film material libraries.

    PubMed

    Mardare, Cezarina Cela; Hassel, Achim Walter

    2014-11-10

    A combinatorial thin film material library from the molybdenum-tungsten refractory metals oxides system was prepared by thermal coevaporation, and its structural and morphological properties were investigated after a multiple step heat treatment. A mixture of crystalline and amorphous oxides and suboxides was obtained, as well as surface structuring caused by the enrichment of molybdenum oxides in large grains. It was found that the oxide phases and the surface morphology change as a function of the compositional gradient. Tests of the library antimicrobial activity against E. coli were performed and the antimicrobial activity was proven in some defined compositional ranges. A mechanism for explaining the observed activity is proposed, involving a collective contribution from (i) increased local acidity due to the enrichment in large grains of molybdenum oxides with different stoichiometry and (ii) the release of free radicals from the W18O49 phase under visible light.

  5. Fabrication of Fe-Al nanoparticles by selective oxidation of Fe-Al thin films

    NASA Astrophysics Data System (ADS)

    Jang, Pyungwoo; Shin, Seungchan; Jung, Chip-Sup; Kim, Kwang-Ho; Seomoon, Kyu

    2013-04-01

    The possibility of a new technique for fabricating nanoparticles from thin films using selective oxidation in an atmosphere mixture of water vapor and hydrogen was investigated. Fe-5wt.%Al films were RF-sputtered and annealed in the atmosphere mixture at 900°C for up to 200 min, in order to oxidize aluminum selectively. Thermodynamics simulation showed that temperatures exceeding 800°C are necessary to prevent iron from being oxidized, as confirmed by the depth profile of XPS. As the annealing time increased, the morphology of the 200-nm Fe-Al films changed from the continuous to the discontinuous type; thus, particulate Fe-Al films formed after 100 min. The particulate 10- to 100-nm Fe-Al films showed super-paramagnetic behavior after the oxidation. Thus, a new technique for fabricating nanoparticles was successfully introduced using selective oxidation.

  6. Transport and magnetism correlations in thin-film ferromagnetic oxides

    SciTech Connect

    Hundley, M.F.; Neumeier, J.J.; Heffner, R.H.; Jia, Q.X.; Wu, X.D.; Thompson, J.D.

    1995-09-01

    In order to determine the {Tc}-dependence of the colossal magnetoresistance (MR) exhibited by the ferromagnetic La{sub 0.7}M{sub 0.3}MnO{sub 3+{sigma}} (M = Ba, Ca, Sr) system, the authors examine the magnetic-field and temperature dependent resistivity and magnetization of a series of thin films that were grown via pulsed-laser deposition. The films had magnetic ordering temperatures (T{sub C}) ranging from 150 to 350 K; all samples displayed a large negative MR that is largest near {Tc}. The magnitude of a given sample`s MR at {Tc} inversely correlates with {Tc}; samples with a low {Tc} display significantly larger MR values than do samples with large {Tc}`s. The quantity {rho}({Tc})/{rho}(4 K), the amount by which the resistivity is reduced by full ferromagnetic order, is an activated function of {Tc} with an activation energy E{sub a} = 0.1 eV. These results indicate that the magnitude of the CMR effect in a given specimen is controlled not by {rho}({Tc}), but by {Tc} via the ratio {rho}({Tc})/{rho}(4 K). Phenomenological scaling relationships are also reported that link {rho}(H,T) to both H and M(H, T).

  7. Functional Multilayered Transparent Conducting Oxide Thin Films for Photovoltaic Devices

    SciTech Connect

    Noh, J. H.; Lee, S.; Kim, J. Y.; Lee, J. K.; Han, H. S.; Cho, C. M.; Cho, I. S.; Jung, H. S.; Hong, K. S.

    2009-01-01

    In this study, we present a thermally stable multilayered transparent conducting oxide (TCO) functionalized for dye-sensitized solar cells (DSSCs). Nb-doped TiO{sub 2} (NTO) layers deposited on conventional Sn-doped In{sub 2}O{sub 3} (ITO) substrates using pulsed laser deposition (PLD) enhanced the optical-to-electrical conversion efficiency of the DSSCs by as much as 17% compared to that of bare ITO-based DSSCs. The electrical properties and J-V characteristics of the multilayered NTO/ITO films showed that the improved cell performance was due to the facilitated charge injection from TiO{sub 2} to ITO that resulted from the formation of an ohmic contact with ITO, as well as the conserved high conductivity of ITO after the oxidizing annealing process. Moreover, the NTO/ITO-based DSSC exhibited higher efficiency than a F-doped SnO{sub 2}(FTO)-based one, which demonstrates that optimization of multilayered NTO-based TCOs is a realistic approach for achieving highly efficient photoenergy conversion devices.

  8. CSA doped polypyrrole-zinc oxide thin film sensor

    NASA Astrophysics Data System (ADS)

    Chougule, M. A.; Jundale, D. M.; Raut, B. T.; Sen, Shashwati; Patil, V. B.

    2013-02-01

    The polypyrrole-zinc oxide (PPy-ZnO) hybrid sensor doped with different weight ratios of camphor sulphonic acid (CSA) were prepared by spin coating technique. These CSA doped PPy-ZnO hybrids were characterized by field emission scanning electron microscope (FESEM) and fourier transform infrared (FTIR) which proved the formation of polypyrrole, PPy-ZnO and the interaction between polypyrrole - ZnO (PPy-ZnO) hybrid with CSA doping. The gas sensing properties of the PPy-ZnO hybrid films doped with CSA have been studied for oxidizing (NO2) as well as reducing (H2S, NH3, CH4OH and CH3OH) gases at room temperature. We demonstrate that CSA doped PPy-ZnO hybrid films are highly selective to NO2 along with high-sensitivity at low concentration (80% to 100 ppm) and better stability, which suggested that the CSA doped PPy-ZnO hybrid films are potential candidate for NO2 detection at room temperature.

  9. Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Zhou, Dayu; Müller, J.; Xu, Jin; Knebel, S.; Bräuhaus, D.; Schröder, U.

    2012-02-01

    Silicon doped hafnium oxide thin films were recently discovered to exhibit ferroelectricity. In the present study, metal-ferroelectric-metal capacitors with Si:HfO2 thin films as ferroelectric material and TiN as electrodes have been characterized with respect to capacitance and current density as functions of temperature and applied voltage. Polarity asymmetry of the frequency dependent coercive field was explained by interfacial effects. No ferroelectric-paraelectric phase transition was observed at temperatures up to 478 K. Clear distinctions between current evolutions with or without polarization switching were correlated to the time competition between the measurement and the response of relaxation mechanisms.

  10. Improved Transparent Conducting Oxides Boost Performance of Thin-Film Solar Cells (Fact Sheet)

    SciTech Connect

    Not Available

    2011-02-01

    Today?s thin-film solar cells could not function without transparent conducting oxides (TCOs). TCOs act as a window, both protecting the cell and allowing light to pass through to the cell?s active layers. Until recently, TCOs were seen as a necessary, but static, layer of a thin-film photovoltaic (PV) cell. But a group of researchers at the National Renewable Energy Laboratory (NREL) has identified a pathway to producing improved TCO films that demonstrate higher infrared transparency. To do so, they have modified the TCOs in ways that did not seem possible a few years ago.

  11. Damp-Heat Induced Degradation of Transparent Conducting Oxides for Thin Film Solar Cells (Presentation)

    SciTech Connect

    Pern, J.; Noufi, R.; Li, X.; DeHart, C.; To, B.

    2008-05-01

    The objectives are: (1) To achieve a high long-term performance reliability for the thin-film CIGS PV modules with more stable materials, device structure designs, and moisture-resistant encapsulation materials and schemes; (2) to evaluate the DH stability of various transparent conducting oxides (TCOs); (3) to identify the degradation mechanisms and quantify degradation rates; (4) to seek chemical and/or physical mitigation methods, and explore new materials. It's important to note that direct exposure to DH represents an extreme condition that a well-encapsulated thin film PV module may never experience.

  12. Rayleigh instability in polymer thin films coated in the nanopores of anodic aluminum oxide templates.

    PubMed

    Tsai, Chia-Chan; Chen, Jiun-Tai

    2014-01-14

    We study the Rayleigh instability of polystyrene (PS) thin films coated in the nanopores of anodic aluminum oxide (AAO) templates. After thermal annealing, the surface of the PS thin films undulates and the nanostructures transform from nanotubes to Rayleigh-instability-induced nanostructures (short nanorods with encapsulated air bubbles). With longer annealing times, the nanostructures further transform to nanorods with longer lengths. PS samples with two different molecular weights (24 and 100 kg/mol) are used, and their instability transformation processes are compared. The morphology diagrams of the nanostructures at different stages are also constructed to elucidate the mechanism of the morphology transformation.

  13. Study on mixed vanadium oxide thin film deposited by RF magnetron sputtering and its application

    NASA Astrophysics Data System (ADS)

    Ling, Zhang; Jianhui, Tu; Hao, Feng; Jingzhong, Cui

    Vanadium oxide (VOx) thin films were deposited on fused quartz using a pure metal vanadium target by RF reactive magnetron sputtering technique. Film microstructure, valence state, optical transmittance properties were studied. The mixed valence VOx thin films deposited with different thickness were found to be amorphous. And the optical transmittance curves are flatness in certain wavelength region. These films can be used to control the relative light intensity of the rubidium light beam between the rubidium lamp and the vapor cell, in order to optimize the working parameters of the rubidium frequency standard (RAFS).

  14. Structure evolution of zinc oxide thin films deposited by unbalance DC magnetron sputtering

    SciTech Connect

    Aryanto, Didik; Marwoto, Putut; Sugianto; Sudiro, Toto; Birowosuto, Muhammad D.

    2016-04-19

    Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 °C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtained at growth temperature of 400 °C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.

  15. The microstructures and electrical properties of Y-doped amorphous vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Gu, Deen; Zhou, Xin; Guo, Rui; Wang, Zhihui; Jiang, Yadong

    2017-03-01

    One of promising approaches for further improving the sensitivity of microbolometer arrays with greatly-reduced pixel size is using the thermal-sensitive materials with higher performance. In this paper, Y-doped vanadium oxide (VOx) thin films prepared by a reactively sputtering process exhibit enhanced performance for the microbolometer application compared with frequently-applied VOx thin films. Both undoped and Y-doped VOx thin films are amorphous due to the relatively low deposition temperature. Y-doped VOx thin films exhibit smoother surface morphology than VOx due to the restrained expansion of particles during depositions. Y-doping increases the temperature coefficient of resistivity by over 20% for the doping level of 1.30 at%. The change rate of resistivity, after aging for 72 h, of thin films was reduced from about 15% for undoped VOx to 2% due to the introduction of Y. Moreover, Y-doped VOx thin films have a low 1/f noise level as VOx ones. Y-doping provides an attractive approach for preparing VOx thermal-sensitive materials with enhanced performance for microbolometers.

  16. UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors.

    PubMed

    Carlos, Emanuel; Branquinho, Rita; Kiazadeh, Asal; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira

    2016-11-16

    Solution processing of amorphous metal oxides has lately been used as an option to implement in flexible electronics, allowing a reduction of the associated costs and high performance. However, the research has focused more on the semiconductor layer rather than on the insulator layer, which is related to the stability and performance of the devices. This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far-ultraviolet (FUV) irradiation on the properties of the insulator on thin-film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. An optimized dielectric layer was obtained for an annealing of 30 min assisted by FUV exposure. These thin films were applied in gallium-indium-zinc oxide TFTs as dielectrics showing the best results for TFTs annealed at 180 °C with FUV irradiation: good reproducibility with a subthreshold slope of 0.11 ± 0.01 V dec (-1) and a turn-on voltage of -0.12 ± 0.05 V, low operating voltage, and good stability over time. Finally, the dielectric layer was applied in solution-processed indium oxide (In2O3) TFTs at low temperature, 180 °C, with a short processing time being compatible with flexible electronic applications.

  17. Phase transitions via selective elemental vacancy engineering in complex oxide thin films

    NASA Astrophysics Data System (ADS)

    Lee, Sang A.; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-04-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films.

  18. Phase transitions via selective elemental vacancy engineering in complex oxide thin films

    PubMed Central

    Lee, Sang A.; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-01-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films. PMID:27033718

  19. Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters

    NASA Astrophysics Data System (ADS)

    Giorgis, V.; Morini, F.; Zhu, T.; Robillard, J.-F.; Wallart, X.; Codron, J.-L.; Dubois, E.

    2016-11-01

    In this work, we present the synthesis and the characterization of low work function thin films for Micro Thermionic Converters (MTC). The objective is producing a device operating at relatively low temperature (<1000 K). We aim at improving the MTC efficiency by reducing the work function of the electrodes and increasing the emitted current density by alkali metal oxides electrodes coating. In particular, in this work, we analyse and compare the performances of two alkali metal oxides: potassium and caesium oxides. Our choice to exploit those materials relies on their low work function and their abundance. For both materials, we present the results on the synthesis of the oxides under high vacuum and controlled temperature. The oxide thin films were characterized by X-ray photoelectron spectroscopy, photoemission, and thermionic emission measurements. By exploiting the latter technique, a quantitative evaluation of the current density, emitted by the heated oxides, is obtained as a function of temperature. Our results demonstrate that it is possible to decrease the silicon work function by almost 3 eV, enabling significant thermionic currents despite relatively low temperatures (below 850 K).

  20. Glucose-assisted reduction achieved transparent p-type cuprous oxide thin film by a solution method

    NASA Astrophysics Data System (ADS)

    Nie, Sha; Sun, Jian; Gong, Hao; Chen, Zequn; Huang, Yifei; Xu, Jianmei; Zhao, Ling; Zhou, Wei; Wang, Qing

    2016-08-01

    The fabrication of p-type cuprous oxide thin film via a cheap and simple chemical method has been known as challenging. We first find that glucose can assist reduce Cu to a lower valence state in the preparation of cuprous oxide films by the sol-gel method. By first adding glucose in the sol as reducing agent, oxidation from the oxygen in the environment is limited and transparent p-type cuprous oxide films are eventually achieved under optimized experimental conditions. We have developed a p-type cuprous oxide thin film with an optimal Hall mobility of ∼8 cm2/Vs and an optical transmittance of 78%.

  1. Continuously controlled optical band gap in oxide semiconductor thin films

    DOE PAGES

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, chargemore » density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.« less

  2. Continuously controlled optical band gap in oxide semiconductor thin films

    SciTech Connect

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, charge density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.

  3. Enhanced optical constants of nanocrystalline yttrium oxide thin films

    SciTech Connect

    Ramana, C. V.; Mudavakkat, V. H.; Bharathi, K. Kamala; Atuchin, V. V.; Pokrovsky, L. D.; Kruchinin, V. N.

    2011-01-17

    Yttrium oxide (Y{sub 2}O{sub 3}) films with an average crystallite-size (L) ranging from 5 to 40 nm were grown by sputter-deposition onto Si(100) substrates. The optical properties of grown Y{sub 2}O{sub 3} films were evaluated using spectroscopic ellipsometry measurements. The size-effects were significant on the optical constants and their dispersion profiles of Y{sub 2}O{sub 3} films. A significant enhancement in the index of refraction (n) is observed in well-defined Y{sub 2}O{sub 3} nanocrystalline films compared to that of amorphous Y{sub 2}O{sub 3}. A direct, linear L-n relationship found for Y{sub 2}O{sub 3} films suggests that tuning optical properties for desired applications can be achieved by controlling the size at the nanoscale dimensions.

  4. Consequence of oxidant to monomer ratio on optical and structural properties of Polypyrrole thin film deposited by oxidation polymerization technique

    NASA Astrophysics Data System (ADS)

    Jatratkar, Aviraj A.; Yadav, Jyotiprakash B.; Kamat, Sandip V.; Patil, Vaishali S.; Mahadik, D. B.; Barshilia, Harish C.; Puri, Vijaya; Puri, R. K.

    2015-05-01

    This paper reports the effect of oxidant to monomer (O/M) ratio on optical and structural properties of Polypyrrole (PPy) thin film deposited by chemical oxidation polymerization technique. Noticeable changes have observed in the properties of PPy thin films with O/M ratio. Cauliflower structure have been observed in FE-SEM images, wherein grain size is observed to decrease with increase in O/M ratio. AFM results are in good agreement with FE-SEM results. From FTIR spectra it is found that, PPy is in highly oxidized form at low O/M ratio but oxidation decreased with increase in O/M ratio. Also C-C stretching vibrations of PPy ring is decreased whereas C=C stretching is increased with ratio. Absorption peak around 450 nm corresponds to π-π* transition and around 800 nm for polarons and bipolarons. The intensity of such peaks confirms the conductivity of PPy, which is observed maximum at low O/M ratio and found to decrease with increase in ratio. Optical band gap (BG) is found to increase from 2.07 eV to 2.11 eV with increase in the O/M ratio.

  5. Interface engineered multifunctional oxide thin films with optimized properties

    NASA Astrophysics Data System (ADS)

    Collins, Gregory Roy

    2010-06-01

    In our world today, energy has become one of the most valuable resources, in particular, renewable and clean energy sources. The research presented here represents an investigation into three separate areas of this topic. In thin film applications, the ordered structures as well as the inherent thinness of the films precludes the normal physics found in bulk materials. Characterizations of films of this type can provide information on molecular level charge transfer processes of the film layer materials since diffusive properties are minimal. With the control given by pulsed laser deposition methods, film and interface structure can be altered allowing for an examination of these effects on the materials properties. For the electrolyte and cathode materials, this equates to finding thermal and PO2 dependencies for electronic and ionic transport. For barium titanate, aside from the effects of oxygen vacancies, the interface quality between the electrodes and the ferroelectric material determines the effectiveness of energy transfer between these boundaries. That is, poor bonding characteristics or the formation of intermediate layers will introduce inconsistencies and (possibly) unwanted piezoelectric response properties of the material which could introduce parasitic dampening (resistance) of the mechanical vibrations of a piezoelectric transducer, altering its resonant characteristics. The clean reaction products and potential for high power outputs provide a strong impetus into investigations of fuel cell structures to improve their functionality. With conventional applications being dominated by high temperature (>700 °C) cells utilizing YSZ as an electrolyte medium, much gain can be made in efficiency through the lowering of cell operation temperature. The first part of my research focuses on the growth and characterization of a novel multilayered electrolyte structure consisting of alternating layers of GCO and YSZ for use in a medium temperature (400--600

  6. Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

    NASA Astrophysics Data System (ADS)

    Nyoung Jang, Jin; Jong Lee, You; Jang, YunSung; Yun, JangWon; Yi, Seungjun; Hong, MunPyo

    2016-06-01

    In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.

  7. Electrochromic properties of WO3 thin film onto gold nanoparticles modified indium tin oxide electrodes

    NASA Astrophysics Data System (ADS)

    Deng, Jiajia; Gu, Ming; Di, Junwei

    2011-04-01

    Gold nanoparticles (GNPs) thin films, electrochemically deposited from hydrogen tetrachloroaurate onto transparent indium tin oxide (ITO) thin film coated glass, have different color prepared by variation of the deposition condition. The color of GNP film can vary from pale red to blue due to different particle size and their interaction. The characteristic of GNPs modified ITO electrodes was studied by UV-vis spectroscopy, scanning electron microscope (SEM) images and cyclic voltammetry. WO3 thin films were fabricated by sol-gel method onto the surface of GNPs modified electrode to form the WO3/GNPs composite films. The electrochromic properties of WO3/GNPs composite modified ITO electrode were investigated by UV-vis spectroscopy and cyclic voltammetry. It was found that the electrochromic performance of WO3/GNPs composite films was improved in comparison with a single component system of WO3.

  8. Microstructure, optical property, and electronic band structure of cuprous oxide thin films

    SciTech Connect

    Park, Jun-Woo; Jang, Hyungkeun; Kim, Sung; Choi, Suk-Ho; Lee, Hosun; Kang, Joongoo; Wei, Su-Huai

    2011-11-15

    Cuprous oxide (Cu{sub 2}O) thin films were grown via radio frequency sputtering deposition at various temperatures. The dielectric functions and luminescence properties of the Cu{sub 2}O thin films were measured using spectroscopic ellipsometry and photoluminescence, respectively. High-energy peaks were observed in the photoluminescence spectra. Several critical points (CPs) were found using second derivative spectra of the dielectric functions and the standard critical point model. The electronic band structure and the dielectric functions were calculated using density functional theory, and the CP energies were estimated to compare with the experimental data. We identified the high-energy photoluminescence peaks to quasi-direct transitions which arose from the granular structures of the Cu{sub 2}O thin films.

  9. Electrical and optical properties of indium zinc oxide (IZO) thin films by continuous composition spread.

    PubMed

    Lee, J J; Kim, J S; Yoon, S J; Cho, Y S; Choi, J W

    2013-05-01

    Indium zinc oxide (IZO) films were deposited on glass substrate at room temperature using off-axis RF sputtering-continuous composition spread (CCS) system. The full range composition of IZO films were controlled by the deposition rate and thickness profiles of In2O3 and ZnO target. The structural, electrical and optical properties of IZO thin films were measured as functions of position. IZO thin film had the lowest resistivity and highest carrier concentration at the position of 15 mm (5.02 x 10(-4) omega cm, 3.9 x 10(20)/cm3). And IZO thin film had high transmittance in visible region at measured all positions. This study has investigated to explore the new composition of IZO films using CCS system.

  10. Cholesterol biosensor based on rf sputtered zinc oxide nanoporous thin film

    SciTech Connect

    Singh, S. P.; Arya, Sunil K.; Pandey, Pratibha; Malhotra, B. D.; Saha, Shibu; Sreenivas, K.; Gupta, Vinay

    2007-08-06

    Cholesterol oxidase (ChOx) has been immobilized onto zinc oxide (ZnO) nanoporous thin films grown on gold surface. A preferred c-axis oriented ZnO thin film with porous surface morphology has been fabricated by rf sputtering under high pressure. Optical studies and cyclic voltammetric measurements show that the ChOx/ZnO/Au bioelectrode is sensitive to the detection of cholesterol in 25-400 mg/dl range. A relatively low value of enzyme's kinetic parameter (Michaelis-Menten constant) {approx}2.1 mM indicates enhanced enzyme affinity of ChOx to cholesterol. The observed results show promising application of nanoporous ZnO thin film for biosensing application without any functionalization.

  11. The Effects of ph on Structural and Optical Characterization of Iron Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Tezel, Fatma Meydaneri; Özdemir, Osman; Kariper, I. Afşin

    In this study, the iron oxide thin films have been produced by chemical bath deposition (CBD) method as a function of pH onto amorphous glass substrates. The surface images of the films were investigated with scanning electron microscope (SEM). The crystal structures, orientation of crystallization, crystallite sizes, and dislocation density i.e. structural properties of the thin films were analyzed with X-ray diffraction (XRD). The optical band gap (Eg), optical transmission (T%), reflectivity (R%), absorption coefficient (α), refraction index (n), extinction coefficient (k) and dielectric constant (ɛ) of the thin films were investigated depending on pH, deposition time, solution temperature, substrate temperature, thickness of the films by UV-VIS spectrometer.

  12. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    SciTech Connect

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-09-28

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  13. Hybrid composite thin films composed of tin oxide nanoparticles and cellulose

    NASA Astrophysics Data System (ADS)

    Mahadeva, Suresha K.; Nayak, Jyoti; Kim, Jaehwan

    2013-07-01

    This paper reports the preparation and characterization of hybrid thin films consisting of tin oxide (SnO2) nanoparticles and cellulose. SnO2 nanoparticle loaded cellulose hybrid thin films were fabricated by a solution blending technique, using sodium dodecyl sulfate as a dispersion agent. Scanning and transmission electron microscopy studies revealed uniform dispersion of the SnO2 nanoparticles in the cellulose matrix. Reduction in the crystalline melting transition temperature and tensile properties of cellulose was observed due to the SnO2 nanoparticle loading. Potential application of these hybrid thin films as low cost, flexible and biodegradable humidity sensors is examined in terms of the change in electrical resistivity of the material exposed to a wide range of humidity as well as its response-recovery behavior.

  14. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    NASA Astrophysics Data System (ADS)

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-09-01

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  15. Oxidation of rubrene thin films: an electronic structure study.

    PubMed

    Sinha, Sumona; Wang, C-H; Mukherjee, M; Mukherjee, T; Yang, Y-W

    2014-12-30

    The performances of organic semiconductor devices are crucially linked with their stability at the ambient atmosphere. The evolution of electronic structures of 20 nm thick rubrene films exposed to ambient environment with time has been studied by UV and X-ray photoemission spectroscopy (UPS and XPS), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, and density functional theory (DFT). XPS, NEXAFS data, and DFT calculated values suggest the formation of rubrene-epoxide and rubrene-endoperoxide through reaction of tetracene backbone with oxygen of ambient environment. Angle dependent XPS measurement indicates that the entire probed depth of the films reacts with oxygen by spending only about 120 min in ambient environment. The HOMO peak of pristine rubrene films almost disappears by exposure of 120 min to ambient environment. The evolution of the valence band (occupied states) and NEXAFS (unoccupied states) spectra indicates that the films become more insulating with exposure as the HOMO-LUMO gap increases on oxidation. Oxygen induced chemical reaction completely destroys the delocalized nature of the electron distribution in the tetracene backbone of rubrene. The results are relevant to the performance and reliability of rubrene based devices in the environment.

  16. Formation of thin walled ceramic solid oxide fuel cells

    DOEpatents

    Claar, Terry D.; Busch, Donald E.; Picciolo, John J.

    1989-01-01

    To reduce thermal stress and improve bonding in a high temperature monolithic solid oxide fuel cell (SOFC), intermediate layers are provided between the SOFC's electrodes and electrolyte which are of different compositions. The intermediate layers are comprised of a blend of some of the materials used in the electrode and electrolyte compositions. Particle size is controlled to reduce problems involving differential shrinkage rates of the various layers when the entire structure is fired at a single temperature, while pore formers are provided in the electrolyte layers to be removed during firing for the formation of desired pores in the electrode layers. Each layer includes a binder in the form of a thermosetting acrylic which during initial processing is cured to provide a self-supporting structure with the ceramic components in the green state. A self-supporting corrugated structure is thus formed prior to firing, which the organic components of the binder and plasticizer removed during firing to provide a high strength, high temperature resistant ceramic structure of low weight and density.

  17. Sputter deposition and characterization of lithium cobalt oxide thin films and their applications in thin-film rechargeable lithium batteries

    SciTech Connect

    Wang, B.; Bates, J.B.; Luck, C.F.; Sales, B.C.; Zuhr, R.A.; Robertson, J.D.

    1996-01-01

    Li Co oxide thin films were deposited by rf magnetron sputtering of a LiCoO{sub 2} target in a 3:1 Ar/O{sub 2} mixture gas. From proton-induced gamma-ray emission analysis and Rutherford backscattering spectrometry, the average composition of these films was determined to be Li{sub 1.15}CoO{sub 2.16}. X-ray powder diffraction patterns of films annealed in air at 500-700 C were consistent with regular rhombohedral structure of crystalline LiCoO{sub 2}. Discharge curves of thin film lithium cells with amoprohous LiCoO{sub 2} showed no obvious structural transition between 4.2 and 1.5 V. Shape of discharge curves of cells with polycrystalline cathodes were consistent with a two-phase voltage plateau at {similar_to}3.9 V with a relatively large capacity and two additional smaller plateaus at higher voltages. Cells with the 700 C annealed cathodes showed a capacity loss of {similar_to} after 1000 cycles between 4.2 and 3.0 V.

  18. A novel thin film solid oxide fuel cell for microscale energy conversion

    SciTech Connect

    Jankowiski, A; Morse, J

    1999-07-21

    A novel approach for the fabrication and assembly of a solid oxide fuel cell system is described which enables effective scaling of the fuel delivery, manifold, and fuel cell stack components for applications in miniature and microscale energy conversion. Electrode materials for solid oxide fuel cells are developed using sputter deposition techniques. A thin film anode is formed by co-deposition of nickel and yttria-stabilized zirconia (YSZ). This approach provides a mixed conducting inter-facial layer between the nickel electrode and electrolyte layer. Similarly, a thin film cathode is formed by co-deposition of silver and yttria-stabilized zirconia. Additionally, sputter deposition of yttria-stabilized zirconia thin film electrolyte enables high quality, continuous films to be formed having thicknesses on the order of 1-2 {micro}m. This will effectively lower the temperature of operation for the fuel cell stack significantly below the traditional ranges at which solid oxide electrolyte systems are operated (600-1000 C), thereby rendering this fuel cell system suitable for miniaturization, Scaling towards miniaturization is accomplished by utilizing novel micromachining approaches which allow manifold channels and fuel delivery system to be formed within the substrate which the thin film fuel cell stack is fabricated on, thereby circumventing the need for bulky manifold components which are not directly scalable. Methods to synthesize anodes for thin film solid-oxide fuel cells (TFSOFCs) from the electrolyte and a conductive material are developed using photolithographic patterning and physical vapor deposition. The anode layer must enable combination of the reactive gases, be conductive to pass the electric current, and provide mechanical support to the electrolyte and cathode layers. The microstructure and morphology desired for the anode layer should facilitate generation of maximum current density from the fuel cell. For these purposes, the parameters of the

  19. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide.

    PubMed

    Noviyana, Imas; Lestari, Annisa Dwi; Putri, Maryane; Won, Mi-Sook; Bae, Jong-Seong; Heo, Young-Woo; Lee, Hee Young

    2017-06-26

    Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

  20. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

    PubMed Central

    Noviyana, Imas; Lestari, Annisa Dwi; Putri, Maryane; Won, Mi-Sook; Bae, Jong-Seong; Heo, Young-Woo; Lee, Hee Young

    2017-01-01

    Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C. PMID:28773058

  1. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method

    PubMed Central

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-01-01

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]nRS[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures. PMID:26153533

  2. Silver Nanoparticle-Embedded Thin Silica-Coated Graphene Oxide as an SERS Substrate

    PubMed Central

    Pham, Xuan-Hung; Hahm, Eunil; Kim, Hyung-Mo; Shim, Seongbo; Kim, Tae Han; Jeong, Dae Hong; Lee, Yoon-Sik; Jun, Bong-Hyun

    2016-01-01

    A hybrid of Ag nanoparticle (NP)-embedded thin silica-coated graphene oxide (GO@SiO2@Ag NPs) was prepared as a surface-enhanced Raman scattering (SERS) substrate. A 6 nm layer of silica was successfully coated on the surface of GO by the physical adsorption of sodium silicate, followed by the hydrolysis of 3-mercaptopropyl trimethoxysilane. Ag NPs were introduced onto the thin silica-coated graphene oxide by the reduction of Ag+ to prepare GO@SiO2@Ag NPs. The GO@SiO2@Ag NPs exhibited a 1.8-fold enhanced Raman signal compared to GO without a silica coating. The GO@SiO2@Ag NPs showed a detection limit of 4-mercaptobenzoic acid (4-MBA) at 0.74 μM. PMID:28335304

  3. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method

    NASA Astrophysics Data System (ADS)

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-07-01

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]nRS[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures.

  4. Growth of textured thin Au coatings on iron oxide nanoparticles with near infrared absorbance

    PubMed Central

    Ma, L L; Borwankar, A U; Willsey, B W; Yoon, K Y; Tam, J O; Sokolov, K V; Feldman, M D; Milner, T E; Johnston, K P

    2013-01-01

    A homologous series of Au-coated iron oxide nanoparticles, with hydrodynamic diameters smaller than 60 nm was synthesized with very low Auto-iron mass ratios as low as 0.15. The hydrodynamic diameter was determined by dynamic light scattering and the composition by atomic absorption spectroscopy and energy dispersive x-ray spectroscopy (EDS). Unusually low Au precursor supersaturation levels were utilized to nucleate and grow Au coatings on iron oxide relative to formation of pure Au nanoparticles. This approach produced unusually thin coatings, by lowering autocatalytic growth of Au on Au, as shown by transmission electron microscopy (TEM). Nearly all of the nanoparticles were attracted by a magnet indicating a minimal amount of pure Au particles The coatings were sufficiently thin to shift the surface plasmon resonance (SPR) to the near infrared (NIR), with large extinction coefficients., despite the small particle hydrodynamic diameters, observed from dynamic light scattering to be less than 60 nm. PMID:23238021

  5. Boron-doped cobalt oxide thin films and its electrochemical properties

    NASA Astrophysics Data System (ADS)

    Kerli, S.

    2016-09-01

    The cobalt oxide and boron-doped cobalt oxide thin films were produced by spray deposition method. All films were obtained onto glass and fluorine-doped tin oxide (FTO) substrates at 400∘C and annealed at 550∘C. We present detailed analysis of the morphological and optical properties of films. XRD results show that boron doping disrupts the structure of the films. Morphologies of the films were investigated by using a scanning electron microscopy (SEM). Optical measurements indicate that the band gap energies of the films change with boron concentrations. The electrochemical supercapacitor performance test has been studied in aqueous 6 M KOH electrolyte and with scan rate of 5 mV/s. Measurements show that the largest capacitance is obtained for 3% boron-doped cobalt oxide film.

  6. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    NASA Astrophysics Data System (ADS)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

    2012-11-01

    The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  7. Formation of thin tungsten oxide layers: characterization and exposure to deuterium

    NASA Astrophysics Data System (ADS)

    Addab, Y.; Martin, C.; Pardanaud, C.; Khayadjian, J.; Achkasov, K.; Kogut, D.; Cartry, G.; Giacometti, G.; Cabié, M.; Gardarein, J. L.; Roubin, P.

    2016-02-01

    Thin tungsten oxide layers with thicknesses up to 250 nm have been formed on W surfaces by thermal oxidation following a parabolic growth rate. The reflectance of the layers in the IR range 2.5-16 μm has been measured showing a decrease with the layer thickness especially at low wavelengths. Raman microscopy and x-ray diffraction show a nanocrystalline WO3 monoclinic structure. Low energy deuterium plasma exposure (11 eV/D+) has been performed inducing a phase transition, a change in the sample colour and the formation of tungsten bronze (D x WO3). Implantation modifies the whole layer suggesting a deep diffusion of deuterium inside the oxide. After exposure, a deuterium release due to the oxidation of D x WO3 under ambient conditions has been evidenced showing a reversible deuterium retention.

  8. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

    SciTech Connect

    Ceschia, M.; Paccagnella, A. |; Cester, A.; Scarpa, A.; Ghidini, G.

    1998-12-01

    Low-field leakage current has been measured in thin oxides after exposure to ionizing radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunneling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV. The neutral trap distribution is influenced by the oxide field applied during irradiation, thus indicating that the precursors of the neutral defects are charged, likely being defects associated to trapped holes. The maximum leakage current is found under zero-field condition during irradiation, and it rapidly decreases as the field is enhanced, due to a displacement of the defect distribution across the oxide towards the cathodic interface. The RILC kinetics are linear with the cumulative dose, in contrast with the power law found on electrically stressed devices.

  9. Thin coatings for protecting titanium aluminides in high-temperature oxidizing environments

    NASA Technical Reports Server (NTRS)

    Wiedemann, K. E.; Taylor, P. J.; Clark, R. K.; Wallace, T. A.

    1991-01-01

    Titanium aluminides have high specific strengths at high temperatures but are susceptible to environmental attack. Their use in many aerospace applications would require that they be protected with coatings that, for structural efficiency, must be thin. It is conceivable that acceptable coatings might be found in several oxide systems, and consequently, oxide coatings of many compositions were prepared from sol-gels for study. Response-surface methodology was used to refine coating compositions and factorial experiments were used to develop coating strategies. Oxygen permeability diagrams of two-layer coatings for several oxide systems, an analysis of multiple-layer coatings on rough and polished surfaces, and modeling of the oxidation weight gain are presented.

  10. Graphene oxide thin films: influence of chemical structure and deposition methodology.

    PubMed

    Hidalgo, R S; López-Díaz, D; Velázquez, M Mercedes

    2015-03-10

    We synthesized graphene oxide sheets of different functionalization by oxidation of two different starting materials, graphite and GANF nanofibers, followed by purification based on alkaline washing. The chemical structure of graphene oxide materials was determined by X-ray photoelectron spectroscopy (XPS), and the nanoplatelets were characterized by ζ potential and dynamic light scattering (DLS) measurements. The XPS results indicated that the chemical structure depends on the starting material. Two different deposition methodologies, Langmuir-Blodgett (LB) and Langmuir-Schaefer (LS), were employed to build the graphene oxide thin films. The film morphology was analyzed by scanning electron microscopy (SEM). The SEM images allow us to conclude that the LB methodology provides the highest coverage. This coverage is almost independent of the chemical composition of sheets. Conversely, the coverage obtained by the LS methodology increases with the percentage of C-O groups attached to sheets. Surface-pressure isotherms of these materials were interpreted according to the Volmer model.

  11. Ultrahigh vacuum SQUID magnetometry study of the magnetic properties of Co/Co-oxide thin films

    SciTech Connect

    Spagna, S.; Maple, M.B.; Sager, R.E.

    1996-04-01

    Exchange coupling between Co and Co-oxide in bilayer and trilayer thin-film structures has been studied using a recently developed ultrahigh vacuum SQUID magnetometer (UHVSQM) system. Using this novel technique, newly deposited Co films from a separate molecular beam epitaxy facility were transported into the UHVSQM without breaking vacuum and magnetically characterized before and after {ital in} {ital situ} room temperature oxidation. Field-cooled hysteresis measurements performed at low temperatures indicate the presence of a complex antiferromagnetic Co-oxide domain structure as a result of oxidation. The stability of the magnetic structure is determined by competition between frustration generated at the interface when the ferromagnetic Co moments are reversed and stabilizing antiferromagnetic anisotropy which becomes large only at low temperatures ({lt}150 K). {copyright} {ital 1996 American Institute of Physics.}

  12. Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Jiang, Guixia; Liu, Ao; Liu, Guoxia; Zhu, Chundan; Meng, You; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

    2016-10-01

    Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various temperatures (300, 400, 500, and 600 °C) were characterized by using thermogravimetric analysis, optical spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy. The electrical measurements indicate that the insulating properties of MgO thin films are improved with an increase in annealing temperature. In order to clarify the potential application of MgO thin films as gate dielectrics in TFTs, solution-derived In2O3 channel layers were separately fabricated on various MgO dielectric layers. The optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s, an on/off current ratio of 107, and a subthreshold swing of 0.33 V/dec at a low operation voltage of 6 V. This work represents a great step toward the development of portable and low-power consumption electronics.

  13. Gas Barrier and Separation Behavior of Graphene Oxide Nanobrick Wall Thin Films

    NASA Astrophysics Data System (ADS)

    Grunlan, Jaime

    2015-03-01

    In many cases, electronics packaging requires electrical conductivity and barrier to oxygen, even under humid conditions. These two properties have simultaneously been realized through the use of surfactant-free aqueous layer-by-layer (LbL) processing, in the form of a polymer composite nanocoating. By layering graphene oxide (GO) with polyethyleneimine (PEI), a ``nano brick wall'' structure has been created, imparting gas barrier properties to the film. Reducing the graphene oxide with a thermal treatment further produces high oxygen barrier in humid conditions and imparts high electrical conductivity (σ ~ 1750 S/m). These thin films (<400 nm) are flexible relative traditional conductive thin films (e.g. ITO), and processing occurs under ambient conditions with water as the only solvent. Additionally, these PEI/GO thin films exhibit H2/CO2 selectivity (>300), making them interesting for gas purification membranes. The flexible nature of the aforementioned thin films, along with their excellent combination of transport properties, make them ideal candidates for use in a broad range of electronics and other packaging applications.

  14. Electrical and Infrared Optical Properties of Vanadium Oxide Semiconducting Thin-Film Thermometers

    NASA Astrophysics Data System (ADS)

    Zia, Muhammad Fakhar; Abdel-Rahman, Mohamed; Alduraibi, Mohammad; Ilahi, Bouraoui; Awad, Ehab; Majzoub, Sohaib

    2017-10-01

    A synthesis method has been developed for preparation of vanadium oxide thermometer thin film for microbolometer application. The structure presented is a 95-nm thin film prepared by sputter-depositing nine alternating multilayer thin films of vanadium pentoxide (V2O5) with thickness of 15 nm and vanadium with thickness of 5 nm followed by postdeposition annealing at 300°C in nitrogen (N2) and oxygen (O2) atmospheres. The resulting vanadium oxide (V x O y ) thermometer thin films exhibited temperature coefficient of resistance (TCR) of -3.55%/°C with room-temperature resistivity of 2.68 Ω cm for structures annealed in N2 atmosphere, and TCR of -3.06%/°C with room-temperature resistivity of 0.84 Ω cm for structures annealed in O2 atmosphere. Furthermore, optical measurements of N2- and O2-annealed samples were performed by Fourier-transform infrared ellipsometry to determine their dispersion curves, refractive index ( n), and extinction coefficient ( k) at wavelength from 7000 nm to 14,000 nm. The results indicate the possibility of applying the developed materials in thermometers for microbolometers.

  15. High-K Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.

    PubMed

    Woods, Keenan Navarre; Chiang, Tsung-Han; Plassmeyer, Paul N; Kast, Matthew G; Lygo, Alexander C; Grealish, Aidan K; Boettcher, Shannon W; Page, Catherine J

    2017-03-06

    Metal oxide thin films are critical in modern electronic applications. In particular, high-κ dielectrics are of interest for reducing power consumption in metal-insulator-semiconductor (MIS) field-effect transistors. Although thin-film materials are typically produced via vacuum-based methods, solution deposition offers a scalable and cost-efficient alternative. We report an all-inorganic aqueous solution route to amorphous lanthanum zirconium oxide (La2Zr2O7, "LZO") dielectric thin films. LZO films were spin-cast from aqueous solutions of metal nitrates and annealed at temperatures between 300 and 600 °C to produce dense, defect-free, and smooth films with sub-nm roughness. Dielectric constants of 12.2 to 16.4 and loss tangents < 0.6% were obtained for MIS devices utilizing LZO as the dielectric layer (1 kHz). Leakage currents < 10-7 A cm-2 at 4 MV cm-1 were measured for samples annealed at 600 °C. The excellent surface morphology, high dielectric constants, and low leakage current densities makes these LZO dielectrics promising candidates for thin-film transistor devices.

  16. Non-equilibrium origin of high electrical conductivity in gallium zinc oxide thin films

    SciTech Connect

    Zakutayev, Andriy Ginley, David S.; Lany, Stephan; Perry, Nicola H.; Mason, Thomas O.

    2013-12-02

    Non-equilibrium state defines physical properties of materials in many technologies, including architectural, metallic, and semiconducting amorphous glasses. In contrast, crystalline electronic and energy materials, such as transparent conductive oxides (TCO), are conventionally thought to be in equilibrium. Here, we demonstrate that high electrical conductivity of crystalline Ga-doped ZnO TCO thin films occurs by virtue of metastable state of their defects. These results imply that such defect metastability may be important in other functional oxides. This finding emphasizes the need to understand and control non-equilibrium states of materials, in particular, their metastable defects, for the design of novel functional materials.

  17. Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions

    NASA Astrophysics Data System (ADS)

    Silvestri, Marco; Gerardin, Simone; Paccagnella, Alessandro; Ghidini, Gabriella

    2009-08-01

    We investigated the combined effect of heavy-ion irradiation and large applied bias on the dielectric breakdown of ultra-thin gate oxides, analyzing the impact of border regions through dedicated test structures. We found that the irradiation bias polarity plays a fundamental role, with inversion being more detrimental than accumulation for the onset of gate rupture. Moreover, the average voltage to breakdown was, under certain conditions, lower in structures more closely resembling real MOSFETs, as compared to those commonly used for the evaluation of Single Event Gate Rupture. These findings raise some important hardness assurance issues concerning the integrity of gate oxides in radiation environments.

  18. Thin Oxides as a Cu Diffusion Barrier for NIF Be Ablator Capsules

    SciTech Connect

    Youngblood, Kelly P.; Huang, H.; Xu, H. W.; Hayes, J.; Moreno, K. A.; Wu, J. J.; Nikroo, A.; Alford, C. A.; Hamza, A. V.; Kucheyev, S. O.; Wang, Y. M.; Wu, K. J.

    2013-03-01

    The NIF point design uses a five-layer capsule to modify the X-ray absorption in order to achieve optimized shock timing. A stepped copper dopant design defines the layer structure. The production of the capsule involves pyrolysis to remove the inner plastic mandrel. Copper atoms diffuse radially and azimuthally throughout the capsule during pyrolysis. This diffusion significantly diminishes the capsule performance during implosion. Thermal and coated oxide barrier layers employed between layers mitigate the diffusion of copper during the mandrel removal process. The copper atoms do not diffuse through this barrier during pyrolysis. A capsule fabrication method that produces a capsule with a thin oxide layer will be discussed.

  19. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  20. Amorphous thin film ruthenium oxide as an electrode material for electrochemical capacitors

    SciTech Connect

    Jow, T.R.; Zheng, J.P.

    1995-12-31

    Ruthenium oxide thin films of an amorphous phase were successfully prepared on a titanium (Ti) substrate at temperatures below 160 C. The sol-gel process using metal alkoxide precursor in nonaqueous solvents was used to prepare these films. The preliminary results showed that a specific capacitance of 430 F/g can be achieved for amorphous ruthenium oxide electrode in sulfuric acid. Films prepared by this method are compared with the films prepared by the thermal decomposition of the aqueous ruthenium chloride solution at temperatures above 300 C. The specific capacitance, the crystalline structure, and the surface morphology of these films as a function of the preparation temperature were also discussed.

  1. Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters

    NASA Astrophysics Data System (ADS)

    Iechi, Hiroyuki; Watanabe, Yasuyuki; Yamauchi, Hiroshi; Kudo, Kazuhiro

    We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8 - 12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.

  2. X-ray absorption spectroscopy studies of electrochemically deposited thin oxide films.

    SciTech Connect

    Balasubramanian, M.

    1998-06-02

    We have utilized ''in situ'' X-ray Absorption Fine Structure Spectroscopy to investigate the structure and composition of thin oxide films of nickel and iron that have been prepared by electrodeposition on a graphite substrate from aqueous solutions. The films are generally disordered. Structural information has been obtained from the analysis of the data. We also present initial findings on the local structure of heavy metal ions, e.g. Sr and Ce, incorporated into the electrodeposited nickel oxide films. Our results are of importance in a number of technological applications, among them, batteries, fuel cells, electrochromic and ferroelectric materials, corrosion protection, as well as environmental speciation and remediation.

  3. Oxide Thin-Film Transistors Fabricated Using Biodegradable Gate Dielectric Layer of Chicken Albumen

    NASA Astrophysics Data System (ADS)

    Jeon, Da-Bin; Bak, Jun-Yong; Yoon, Sung-Min

    2013-12-01

    An oxide thin-film transistor (TFT) using chicken albumen as gate dielectric on paper substrate was demonstrated. Chicken albumen, which was directly extracted from chicken egg white, was deposited as gate dielectric layer. An In-Ga-Zn-O was chosen as an active channel. The TFT feasibilities were successfully confirmed, in which channel mobility and subthreshold slope of the TFT were 6.48 cm2 V-1 s-1 and 1.28 V/s, respectively. This is the first report on the device configuration combining the biodegradable gate insulator and oxide semiconducting channel.

  4. Difference in charge transport properties of Ni-Nb thin films with native and artificial oxide

    SciTech Connect

    Trifonov, A. S.; Lubenchenko, A. V.; Polkin, V. I.; Pavolotsky, A. B.; Ketov, S. V.; Louzguine-Luzgin, D. V.

    2015-03-28

    Here, we report on the properties of native and artificial oxide amorphous thin film on a surface of an amorphous Ni-Nb sample. Careful measurements of local current-voltage characteristics of the system Ni-Nb / NiNb oxide/Pt, were carried out in contact mode of an atomic force microscope. Native oxide showed n-type conductivity, while in the artificial one exhibited p-type one. The shape of current-voltage characteristic curves is unique in both cases and no analogical behavior is found in the literature. X-ray photoelectron spectroscopy (XPS) measurements were used to detect chemical composition of the oxide films and the oxidation state of the alloy components. Detailed analysis of the XPS data revealed that the structure of natural Ni-Nb oxide film consists of Ni-NbO{sub x} top layer and nickel enriched bottom layer which provides n-type conductivity. In contrast, in the artificial oxide film Nb is oxidized completely to Nb{sub 2}O{sub 5}, Ni atoms migrate into bulk Ni-Nb matrix. Electron depletion layer is formed at the Ni-Nb/Nb{sub 2}O{sub 5} interface providing p-type conductivity.

  5. Epitaxial Lift-Off of Centimeter-Scaled Spinel Ferrite Oxide Thin Films for Flexible Electronics.

    PubMed

    Shen, Lvkang; Wu, Liang; Sheng, Quan; Ma, Chunrui; Zhang, Yong; Lu, Lu; Ma, Ji; Ma, Jing; Bian, Jihong; Yang, Yaodong; Chen, Aiping; Lu, Xiaoli; Liu, Ming; Wang, Hong; Jia, Chun-Lin

    2017-09-01

    Mechanical flexibility of electronic devices has attracted much attention from research due to the great demand in practical applications and rich commercial value. Integration of functional oxide materials in flexible polymer materials has proven an effective way to achieve flexibility of functional electronic devices. However, the chemical and mechanical incompatibilities at the interfaces of dissimilar materials make it still a big challenge to synthesize high-quality single-crystalline oxide thin film directly on flexible polymer substrates. This study reports an improved method that is employed to successfully transfer a centimeter-scaled single-crystalline LiFe5 O8 thin film on polyimide substrate. Structural characterizations show that the transferred films have essentially no difference in comparison with the as-grown films with respect to the microstructure. In particular, the transferred LiFe5 O8 films exhibit excellent magnetic properties under various mechanical bending statuses and show excellent fatigue properties during the bending cycle tests. These results demonstrate that the improved transfer method provides an effective way to compose single-crystalline functional oxide thin films onto flexible substrates for applications in flexible and wearable electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Preparation of metal oxide thin films using coating photolysis process with ArF excimer laser

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Tetsuo; Watanabe, Akio; Imai, Yoji; Niino, Hiroyuki; Yabe, Akira; Yamaguchi, Iwao; Manabe, Takaaki; Kumagai, Toshiya; Mizuta, Susumu

    2000-11-01

    The preparation of metal oxide thin films have been developed using the metalorganic (MO) compounds coating photolysis process with ArF excimer laser irradiation at room temperature. The effect of the starting materials and irradiation method on the product films was investigated by FT-IR, UV, XRD and SEM. It was found that metal acetylacetonates or metal 2-ethylhexanoate was effective as the starting materials. When using metal acetylacetonates as the starting materials, crystallized TiO2, In2O3 and ZrO2 were obtained with ArF laser irradiation at 50 mJ/cm2 at a repetition rate of 5 Hz for 5 min. When using An-acac, Fe, Sn, or In 2-ethylhexanoate as the starting material, a two-step process consisting of both preliminary weak (10mJ/cm2) and sufficiently strong irradiation (50mJ/cm2) was found to be effective for obtaining crystallized ZnO, Fe2O3, SnO2 and In2O3 films. In addition, crystallized complex oxide thin films such as ITO, PbTo3 and PbZrO3 were successfully obtained from the metal acetylacetonates or metal 2-ethylhexanoate using MO coating photolysis process. Patterned metal oxide thin films were also obtained by the ArF laser irradiation through the photomask, followed by leaching with solvents. The crystallization mechanism was discussed from the point of view of the photochemical reaction and photothermal reaction.

  7. Plasma-Assisted Atomic Layer Growth of High-Quality Aluminum Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Jeong, Chang-Wook; Lee, Jang-Sik; Joo, Seung-Ki

    2001-01-01

    Thin aluminum oxide (Al2O3) films were grown by the plasma-assisted atomic layer controlled deposition (PAALD) method using Dimethylethylamine alane [(CH3)2(C2H5)N:AlH3] (DMEAA). Al was deposited by the PAALD method, then the Al films were oxidized into Al2O3 by plasma oxidation in the same chamber without breaking the vacuum. Al2O3 thin films of 15 nm thickness were prepared by repetition of this process. Thus prepared Al2O3 thin films exhibited a refractive index of 1.68. The thickness and the refractive index fluctuation of the film over a 4 inch wafer were ±2.3% and ±1.9%, respectively, for the deposited films. The leakage current density and breakdown field were measured to be about 10-8 A/cm2 at 1 MV/cm and 7 MV/cm, respectively. Considerable improvement of the electrical properties was realized by the post oxygen-plasma annealing at 200°C.

  8. Tuning the magnetism of epitaxial cobalt oxide thin films by electron beam irradiation

    NASA Astrophysics Data System (ADS)

    Lan, Q. Q.; Zhang, X. J.; Shen, X.; Yang, H. W.; Zhang, H. R.; Guan, X. X.; Wang, W.; Yao, Y.; Wang, Y. G.; Peng, Y.; Liu, B. G.; Sun, J. R.; Yu, R. C.

    2017-07-01

    Tuning magnetic properties of perovskite thin films is a central topic of recent studies because of its fundamental significance. In this work, we demonstrated the modification of the magnetism of L a0.9C a0.1Co O3 (LCCO) thin films by introducing a stripelike superstructure in a controllable manner using electron beam irradiation (EBI) in a transmission electron microscope. The microstructure, electronic structure, strain change, and origin of magnetism of the LCCO thin films were studied in detail using aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations based on density functional theory. The results indicate that the EBI-induced unit cell volume expansion accompanies the formation of oxygen vacancies and leads to the spin state transition of Co ions. The low spin state of C o4 + ions depress the stripelike superstructure, while higher spin states of Co ions with lower valences are conductive to the formation of "dark stripes". Our work clarifies the origin of magnetism of epitaxial LCCO thin films, benefiting a comprehensive understanding of correlated physics in cobalt oxide thin films.

  9. Synthesis and Characterization of Potentiostatically Electrodeposited Tungsten Oxide Thin Films for Smart Window Application

    NASA Astrophysics Data System (ADS)

    More, A. J.; Patil, R. S.; Dalavi, D. S.; Suryawanshi, M. P.; Burungale, V. V.; Kim, J. H.; Patil, P. S.

    2017-02-01

    Tungsten oxide (WO3) thin films have been synthesized using electrodeposition in potentiostatic mode and the effect of different deposition potentials on their structural, morphological, optical, and electrochromic (EC) properties investigated. The deposition potential versus saturated calomel electrode (SCE) was varied from -0.35 V to -0.50 V in steps of -0.05 V for 20 min each. The electrodeposited WO3 thin films were characterized using x-ray diffraction analysis, micro-Raman spectroscopy, field-emission scanning electron microscopy, and ultraviolet-visible (UV-Vis) spectrophotometry, revealing amorphous nature with nanograins having average size from 40 nm to 60 nm. The EC performance of the WO3 thin films exhibited response times of 1.35 s for bleaching ( t b) and 3.1 s for coloration ( t c) with excellent reversibility of 64.36%. The highest coloration efficiency of the electrodeposited WO3 thin films was found to be 87.95 cm2/C. The electrochemical reversibility and stability of the WO3 thin films obtained in this study make them promising for use in smart window applications.

  10. Silver nanoparticles on Zinc Oxide thin film: An insight in fabrication and characterization

    NASA Astrophysics Data System (ADS)

    Hossain, M. K.; Drmosh, Q. A.; Yamani, Z. H.; Tabet, N.

    2014-08-01

    In this work, a simple two-steps process has been explained to fabricate silver (Ag) nanoparticles on Zinc Oxide (ZnO) thin film followed by their characterizations. The underneath layer ZnO thin film, as an example, was also investigated how the properties change during the course of nanoparticles fabrication. ZnO thin film was sputtered on standard glass substrate followed by further sputtering of an ultrathin Ag layer. Subsequently the specimen was treated at high temperature in inert environment. A periodic observation at specific temperature intervals confirmed the formation of Ag nanoparticles on ZnO thin film. Field-emission scanning electron microscopic (FESEM) observations revealed the size distribution of as-fabricated Ag nanoparticles in the range of 50-250 nm. Elemental analysis was also confirmed by SEM-aided energy dispersion spectroscopy. The underneath layer ZnO thin film was found to go through recrystallization, stress relaxation, and grain growth during the annealing process. Further treatment to ZnO only film showed a variation in surface topology with reference to those with Ag nanoparticles on ZnO. Such a system was also analysed with finite different time domain (FDTD) analysis. A typical model was considered and FDTD simulation was carried out to understand the trend of absorption depth profile within the absorbing layer involved in plasmonics solar cell.

  11. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    SciTech Connect

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  12. Method of synthesizing a plurality of reactants and producing thin films of electro-optically active transition metal oxides

    DOEpatents

    Tracy, C.E.; Benson, D.K.; Ruth, M.R.

    1985-08-16

    A method of synthesizing a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of electro-optically active transition metal oxides.

  13. Fluorine and oxygen plasma influence on nanoparticle formation and aggregation in metal oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

    2017-03-01

    Despite recent advances in metal oxide thin-film transistor technology, there are no foundry processes available yet for large-scale deployment of metal oxide electronics and photonics, in a similar way as found for silicon based electronics and photonics. One of the biggest challenges of the metal oxide platform is the stability of the fabricated devices. Also, there is wide dispersion on the measured specifications of fabricated TFT, from lot-to-lot and from different research groups. This can be partially explained by the importance of the deposition method and its parameters, which determine thin film microstructure and thus its electrical properties. Furthermore, substrate pretreatment is an important factor, as it may act as a template for material growth. Not so often mentioned, plasma processes can also affect the morphology of deposited films on further deposition steps, such as inducing nanoparticle formation, which strongly impact the conduction mechanism in the channel layer of the TFT. In this study, molybdenum doped indium oxide is sputtered onto ALD deposited HfO2 with or without pattering, and etched by RIE chlorine based processing. Nanoparticle formation is observed when photoresist is removed by oxygen plasma ashing. HfO2 etching in CF4/Ar plasma prior to resist stripping in oxygen plasma promotes the aggregation of nanoparticles into nanosized branched structures. Such nanostructuring is absent when oxygen plasma steps are replaced by chemical wet processing with acetone. Finally, in order to understand the electronic transport effect of the nanoparticles on metal oxide thin film transistors, TFT have been fabricated and electrically characterized.

  14. An (ultra) high-vacuum compatible sputter source for oxide thin film growth

    SciTech Connect

    Mayr, Lukas; Köpfle, Norbert; Auer, Andrea; Klötzer, Bernhard; Penner, Simon

    2013-09-15

    A miniaturised CF-38 mountable sputter source for oxide and metal thin film preparation with enhanced high-vacuum and ultra-high-vacuum compatibility is described. The all home-built sputtering deposition device allows a high flexibility also in oxidic sputter materials, suitable deposition rates for preparation of films in the nm- and the sub-monolayer regime and excellent reliability and enhanced cleanliness for usage in UHV chambers. For a number of technologically important – yet hardly volatile – materials, the described source represents a significant improvement over thermal deposition techniques like electron-beam- or thermal evaporation, as especially the latter are no adequate tool to prepare atomically clean layers of refractory oxide materials. Furthermore, it is superior to commercially available magnetron sputter devices, especially for applications, where highly reproducible sub-monolayer thin film preparation under very clean UHV conditions is required (e.g., for studying phase boundary effects in catalysis). The device in turn offers the usage of a wide selection of evaporation materials and special target preparation procedures also allow the usage of pressed oxide powder targets. To prove the performance of the sputter-source, test preparations with technologically relevant oxide components, comprising ZrO{sub 2} and yttrium-stabilized ZrO{sub 2}, have been carried out. A wide range of characterization methods (electron microscopy, X-ray photoelectron spectroscopy, low-energy ion scattering, atomic force microscopy, and catalytic testing) were applied to demonstrate the properties of the sputter-deposited thin film systems.

  15. Scanning tunneling microscopy/spectroscopy on perovskite oxide thin films deposited in situ.

    PubMed

    Hitosugi, Taro; Shimizu, Ryota; Ohsawa, Takeo; Iwaya, Katsuya

    2014-10-01

    Complex oxide surfaces and interfaces, consisting of two or more cations and oxygen anions, have attracted a great deal of attention because their properties are crucial factors in the performance of catalysts, fuel cells, and Li-ion batteries. However, atomic-scale investigations of these oxide surfaces have been hindered because of the difficulties in surface preparation. Here, we demonstrate atomic-scale surface studies of complex perovskite oxides and the initial growth processes in oxide epitaxial films deposited on (✓13 × ✓13)-R33.7° reconstructed SrTiO3 (001) substrates using a scanning tunneling microscope integrated with a pulsed laser deposition system. The atomically ordered, reconstructed SrTiO3 (001) surface is stable under the typical conditions necessary for the growth of oxide thin films, and hence is considered suitable for the study of the initial growth processes in oxide films. The atomic-scale microscopic/spectroscopic characterizations performed here shed light on the microscopic origin of electronic properties observed in complex oxides and their heterostructures.

  16. One-step synthesis of nanocrystalline transition metal oxides on thin sheets of disordered graphitic carbon by oxidation of MXenes.

    PubMed

    Naguib, Michael; Mashtalir, Olha; Lukatskaya, Maria R; Dyatkin, Boris; Zhang, Chuanfang; Presser, Volker; Gogotsi, Yury; Barsoum, Michel W

    2014-07-18

    Herein we show that heating 2D Ti3C2 in air results in TiO2 nanocrystals enmeshed in thin sheets of disordered graphitic carbon structures that can handle extremely high cycling rates when tested as anodes in lithium ion batteries. Oxidation of 2D Ti3C2 in either CO2 or pressurized water also resulted in TiO2-C hybrid structures. Similarly, other hybrids can be produced, as we show here for Nb2O5/C from 2D Nb2C.

  17. Bimodal spatial distribution of pores in anodically oxidized aluminum thin films

    NASA Astrophysics Data System (ADS)

    Behnke, J. F.; Sands, T.

    2000-12-01

    Though porous anodic aluminum oxide has been the subject of considerable research since the 1950s, little attention has been devoted to the characterization of the self-organization of the pore structures, and fewer of these studies have focused on anodization of thin films. The degree to which these structures self-organize, however, could play a vital role in future applications of porous anodic aluminum oxide. In this study a model is developed to describe pore ordering in thin anodized aluminum films. The model is based on a radial distribution function approach to describe the interpore spacings. Idealized one-dimensional and two-dimensional (2D) radial distribution functions are combined by linear superposition to approximate experimental radial distribution functions. Using these radial distribution functions, an order parameter is developed and an improved definition of pore spacing is constructed. This method confirms that the oxide initially forms with a highly frustrated porous structure and reorganizes toward greater 2D order as the oxide grows into the film.

  18. Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films

    SciTech Connect

    Donaldson, Olivia K.; Hattar, Khalid; Trelewicz, Jason R.

    2016-07-04

    Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO2 phase. While the appearance of these phases indicated the films were evolving to the stable form of tantalum oxide—monoclinic tantalum pentoxide—it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. As a result, new insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs.

  19. Growth and surface characterization of sputter-deposited molybdenum oxide thin films

    SciTech Connect

    Ramana, Chintalapalle V.; Atuchin, Victor V.; Kesler, V. G.; Kochubey, V. A.; Pokrovsky, L. D.; Shutthanandan, V.; Becker, U.; Ewing, Rodney C.

    2007-04-15

    Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of argon-oxygen gas mixture under varying conditions of substrate temperature (Ts) and oxygen partial pressure (pO2). The effect of Ts and pO2 on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of Ts and pO2 on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 *C under 62.3% O2 pressure were stoichiometric and polycrystalline MoO3. Films grown at lower pO2 were nonstoichiometric MoOx films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO3 films.

  20. Electrochemical Water Oxidation by a Catalyst-Modified Metal-Organic Framework Thin Film

    SciTech Connect

    Lin, Shaoyang; Pineda-Galvan, Yuliana; Maza, William A.; Epley, Charity C.; Zhu, Jie; Kessinger, Matthew C.; Pushkar, Yulia; Morris, Amanda J.

    2016-12-15

    Water oxidation, a key component in artificial photosynthesis, requires high overpotentials and exhibits slow reaction kinetics that necessitates the use of stable and efficient heterogeneous water-oxidation catalysts (WOCs). Here, we report the synthesis of UiO-67 metal–organic framework (MOF) thin films doped with [Ru(tpy)(dcbpy)OH2]2+ (tpy=2,2':6',2''-terpyridine, dcbpy=5,5'-dicarboxy-2,2'-bipyridine) on conducting surfaces and their propensity for electrochemical water oxidation. The electrocatalyst oxidized water with a turnover frequency (TOF) of (0.2±0.1) s-1 at 1.71 V versus the normal hydrogen electrode (NHE) in buffered solution (pH~7) and exhibited structural and electrochemical stability. The electroactive sites were distributed throughout the MOF thin film on the basis of scan-ratedependent voltammetry studies. This work demonstrates a promising way to immobilize large concentrations of electroactive WOCs into a highly robust MOF scaffold and paves the way for future photoelectrochemical water-splitting systems.

  1. Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films

    SciTech Connect

    Donaldson, Olivia K.; Hattar, Khalid; Trelewicz, Jason R.

    2016-07-04

    Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO2 phase. While the appearance of these phases indicated the films were evolving to the stable form of tantalum oxide—monoclinic tantalum pentoxide—it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. As a result, new insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs.

  2. Electrochemical DNA biosensors based on thin gold films sputtered on capacitive nanoporous niobium oxide.

    PubMed

    Rho, Sangchul; Jahng, Deokjin; Lim, Jae Hoon; Choi, Jinsub; Chang, Jeong Ho; Lee, Sang Cheon; Kim, Kyung Ja

    2008-01-18

    Electrochemical DNA biosensors based on a thin gold film sputtered on anodic porous niobium oxide (Au@Nb(2)O(5)) are studied in detail here. We found that the novel DNA biosensor based on Au@Nb(2)O(5) is superior to those based on the bulk gold electrode or niobium oxide electrode. For example, the novel method does not require any time-consuming cleaning step in order to obtain reproducible results. The adhesion of gold films on the substrate is very stable during electrochemical biosensing, when the thin gold films are deposited on anodically prepared nanoporous niobium oxide. In particular, the novel biosensor shows enhanced biosensing performance with a 2.4 times higher resolution and a three times higher sensitivity. The signal enhancement is in part attributed to capacitive interface between gold films and nanoporous niobium oxide, where charges are accumulated during the anodic and cathodic scanning, and is in part ascribed to the structural stability of DNA immobilized at the sputtered gold films. The method allows for the detection of single-base mismatch DNA as well as for the discrimination of mismatch positions.

  3. Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films

    DOE PAGES

    Donaldson, Olivia K.; Hattar, Khalid; Trelewicz, Jason R.

    2016-07-04

    Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO2 phase. While the appearance of these phases indicated the films were evolving to themore » stable form of tantalum oxide—monoclinic tantalum pentoxide—it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. As a result, new insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs.« less

  4. Sulfur-vanadium oxide gel composites as thin film cathodes for rechargeable lithium batteries

    SciTech Connect

    Mukherjee, S.P.; Gavrilov, A.B.; Skotheim, T.A.

    1998-07-01

    A class of novel electroactive cathode materials based on composites produced from elemental sulfur and vanadium oxide xerogels or aerogels has been developed as models for lithium battery applications. The use of elemental sulfur in rechargeable lithium batteries has been hindered due to certain limitations such as, very low electronic conductivity and the out-diffusion of polysulfides during the cycling process which reduces the cycling efficiency. Vanadium oxide xerogels and aerogels have certain desirable characteristic physico-chemical properties, such as, high surface areas with nono-scale interconnecting porosity, high electronic conductivity, non- or nanocrystallinity, and oxidation reduction catalytic activity. Since these properties may improve the performance of sulfur based rechargeable batteries, a family of composite cathodes containing elemental sulfur and vanadium oxide gels were produced. The performance of the composites cathodes, in thin film form, were evaluated in coin cells and AA cells with metallic lithium anodes and liquid electrolytes. The multifunctional role of vanadium oxide gels on the cell performance of the cells having composite cathodes has been qualitatively explored. Results indicate that the cathodes having xerogel composites based on vanadium oxide sol from vanadium oxide isopropoxide can be made with high sulfur content (80 wt %) and with low carbon content (5 wt %) and without any polymer binder. This shows the contribution of adhesive properties and electronic conductivity of vanadium oxide xerogels. A significant suppression of polysulfide out-diffusion is observed with appropriate processing of the composite cathodes. It is anticipated that the nanoscale interconnecting porosity of gels plays an important role in this behavior. An excellent rate capability is observed with the vanadium-oxide sulfur composite cathodes indicating the contribution of intrinsic electrochemical properties of the vanadium oxide.

  5. Effect of oxidizing agent on the properties of polyaniline thin films

    NASA Astrophysics Data System (ADS)

    Gore, Sagar; Rohom, Ashwini B.; Londhe, Priyanka U.; Chaure, Nandu B.

    2017-05-01

    Conducting polymers have been widely investigated because of their fascinating electrical and optical properties. In the present work, the oxidation of aniline was carried out in acidic aqueous media using chemical bath deposition method. Aniline, hydrochloric acid and ammonium dichromate (ADC) are used as aniline oligomers, dopant acid and oxidizing agent, respectively. Effect of oxidizing agent concentration on various properties of polyaniline thin films were studied extensively with the aid of Raman spectroscopy, UV-Vis spectroscopy, PL spectroscopy, scanning electron microscopy and current-voltage measurements. UV, PL and Raman studies reveals that the higher concentration of ADC leads to the formation of emeraldine base form of PANI and at lower concentration supports the growth of conducting emeraldine salt. SEM micrographs confirm the compact and uniform growth of PANI. PANI films grown at lower concentration of ADC shows higher conductivity.

  6. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films.

    PubMed

    Hudaya, Chairul; Park, Ji Hun; Lee, Joong Kee

    2012-01-05

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

  7. Characterization of zinc oxide thin film for pH detector

    NASA Astrophysics Data System (ADS)

    Hashim, Uda; Fathil, M. F. M.; Arshad, M. K. Md; Gopinath, Subash C. B.; Uda, M. N. A.

    2017-03-01

    This paper presents the fabrication process of the zinc oxide thin films for using to act as pH detection by using different PH solution. Sol-gel solution technique is used for preparing zinc oxide seed solution, followed by metal oxide deposition process by using spin coater on the silicon dioxide. Silicon dioxide layer is grown on the silicon wafer, then, ZnO seed solution is deposited on the silicon layer, baked, and annealing process carried on to undergo the characterization of its surface morphology, structural and crystalline phase. Electrical characterization is showed by using PH 4, 7, and 10 is dropped on the surface of the die, in addition, APTES solution is used as linker and also as a references of the electrical characterization.

  8. Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001)

    NASA Astrophysics Data System (ADS)

    Wu, Yutong; Tao, Hui-Shu; Garfunkel, Eric; Madey, Theodore E.; Shinn, Neal D.

    1995-08-01

    The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ˜ 15 Å deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ˜ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting {Al}/{Ru} interfacial alloying. Annealing Al films to ˜ 1000 K in 1 × 10 -4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.

  9. Thermal treatment of solution-processed nano-sized thin films of molybdenum oxide

    NASA Astrophysics Data System (ADS)

    Ganchev, M.; Sendova-Vassileva, M.; Popkirov, G.; Vitanov, P.

    2016-10-01

    A solution based deposition method to form nano-sized thin films of molybdenum oxide suitable for photovoltaic device applications is presented. The samples were deposited by spin-coating from molybdenum metal organic precursor solution on soda lime glass substrates. The influence of the process parameters such as spinning regime and concentration of the precursor solutions on the thickness and morphology of the films were investigated. The thermal decomposition of the molybdenum precursor and oxide formation were investigated by differential scanning calorimetry and characteristic patterns showed transitions up to 300oC followed by a zone of stability. Optical spectroscopy measurements in the wavelength range from 300 to 1800 nm presented an increase in transparency when temperature of annealing was raised up to 400oC. Raman scattering analysis revealed the presence of mixed molybdenum oxides. Measurements of the electrical conductivity were performed by the 4-point method.

  10. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOEpatents

    Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

    1998-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  11. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOEpatents

    Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

    1999-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  12. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOEpatents

    Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

    1998-05-19

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

  13. Adsorption and Reaction of Methanol on Thin-film Cerium Oxide

    SciTech Connect

    Mullins,D.; Robbins, M.; Zhou, J.

    2006-01-01

    Formaldehyde adsorption and reaction have been studied on cerium oxide thin films that were vapor deposited on Ru(0 0 0 1). The formaldehyde behavior was examined as a function of temperature, exposure and Ce oxidation state. Formaldehyde chemisorbs on fully oxidized CeO{sub 2} as dioxymethylene, CH{sub 2}O{sub 2}. The dioxymethylene decomposes and desorbs as formaldehyde between 200 K and 400 K. No other products are formed. On reduced ceria, formaldehyde also adsorbs as dioxymethylene. In addition to the formaldehyde desorption between 200 K and 400 K, a more strongly bound form of dioxymethylene is formed that produces formaldehyde at 440 K. Above 400 K, some of the dioxymethylene reacts to form formate and methoxy on the surface. These species decompose to produce H{sub 2}, CO and CH{sub 2}O above 500 K.

  14. Adsorption and Reaction of Formaldehyde on Thin-film Cerium Oxide

    SciTech Connect

    Zhou,J.; Mullins, D.

    2006-01-01

    Formaldehyde adsorption and reaction have been studied on cerium oxide thin films that were vapor deposited on Ru(0 0 0 1). The formaldehyde behavior was examined as a function of temperature, exposure and Ce oxidation state. Formaldehyde chemisorbs on fully oxidized CeO{sub 2} as dioxymethylene, CH{sub 2}O{sub 2}. The dioxymethylene decomposes and desorbs as formaldehyde between 200 K and 400 K. No other products are formed. On reduced ceria, formaldehyde also adsorbs as dioxymethylene. In addition to the formaldehyde desorption between 200 K and 400 K, a more strongly bound form of dioxymethylene is formed that produces formaldehyde at 440 K. Above 400 K, some of the dioxymethylene reacts to form formate and methoxy on the surface. These species decompose to produce H{sub 2}, CO and CH{sub 2}O above 500 K.

  15. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    SciTech Connect

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; Williams, Garth; Thieme, Juergen; Li, Li; Chen-Wiegart, Yu-chen Karen; Nykypanchuk, Dmytro; Muto, Atsushi

    2016-08-29

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and wide angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1 μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. Utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.

  16. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    DOE PAGES

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; ...

    2016-09-02

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

  17. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    SciTech Connect

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; Williams, Garth; Thieme, Juergen; Nykypanchuk, Dmytro; Li, Li; Muto, Atsushi; Chen-Wiegart, Yu-chen Karen

    2016-09-02

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and wide angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.

  18. Ethanol-assisted graphene oxide-based thin film formation at pentane-water interface.

    PubMed

    Chen, Fuming; Liu, Shaobin; Shen, Jianmin; Wei, Li; Liu, Andong; Chan-Park, Mary B; Chen, Yuan

    2011-08-02

    Graphene oxide (GO) can be viewed as an amphiphilic soft material, which form thin films at organic solvent-water interfaces. However, organic solvent evaporation provides little driving force, which results in slow GO transfer in aqueous phase, thus dawdling GO film formation processes for various potential applications. We present an ethanol-assisted self-assembly method for the quick formation of GO or GO-based composite thin films with tunable composition, transmittance, and surface resistivity at pentane-water interface. The thickness of pure GO and reduced GO (rGO) films ranging from ~1 nm to more than 10 nm can be controlled by the concentration of GO in bulk solution. The transmittance of rGO films can be tuned from 72% to 97% at 550 nm while the surface resistivity changes from 8.3 to 464.6 kΩ sq(-1). Ethanol is essential for achieving quick formation of GO thin films. When ethanol is injected into GO aqueous dispersion, it serves as a nonsolvent, compromising the stability of GO and providing driving force to allow GO sheets aggregate at the water-pentane interface. On the other hand, neither the evaporation of pentane nor the mixing between ethanol and water provides sufficient driving forces to allow noteworthy amount of GO sheets to migrate from the bulk aqueous phase to the interface. This method can also be extended to prepare GO-based composites thin films with tunable composition, such as GO/single walled carbon nanotube (SWCNT) composite thin films investigated in this work. Reduced GO/SWCNT composite films show much lower surface resistivity compared to pure rGO thin films. This ethanol-assisted self-assembly method opens opportunities to design and fabricate new functional GO-based hybrid materials for various potential applications.

  19. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    SciTech Connect

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; Williams, Garth; Thieme, Juergen; Nykypanchuk, Dmytro; Li, Li; Muto, Atsushi; Chen-Wiegart, Yu-chen Karen

    2016-09-02

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and wide angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.

  20. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; Williams, Garth; Thieme, Juergen; Nykypanchuk, Dmytro; Li, Li; Muto, Atsushi; Chen-Wiegart, Yu-chen Karen

    2016-08-01

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and wide angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100-200 nm wide by 1 μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. Utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.

  1. Structure and properties of uranium oxide thin films deposited by pulsed dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Jianliang; Dahan, Isaac; Valderrama, Billy; Manuel, Michele V.

    2014-05-01

    Crystalline uranium oxide thin films were deposited in an unbalanced magnetron sputtering system by sputtering from a depleted uranium target in an Ar + O2 mixture using middle frequency pulsed dc magnetron sputtering. The substrate temperature was constantly maintained at 500 °C. Different uranium oxide phases (including UO2-x, UO2, U3O7 and U3O8) were obtained by controlling the percentage of the O2 flow rate to the total gas flow rate (f) in the chamber. The crystal structure of the films was characterized using X-ray diffraction and the microstructure of the films was studied using transmission electron microscopy and atom probe tomography. When the f was below 10%, the film contains a mixture of metallic uranium and UO2-x phases. As the f was controlled in the range of 10-13%, UO2 films with a (2 2 0) preferential orientation were obtained. The oxide phase rapidly changed to a mixture of U3O7 and U3O8 as the f was increased to the range of 15-18%. Further increasing the f to 20% and above, polycrystalline U3O8 thin films with a (0 0 1) preferential orientation were formed. The hardness and Young's modulus of the uranium oxide films were evaluated using nanoindentation. The film containing a single UO2 phase exhibited the maximum hardness of 14.3 GPa and a Young's modulus of 195 GPa. The UO2 thin film also exhibited good thermal stability in that no phase change was observed after annealing at 600 °C in vacuum for 104 h.

  2. Solution-cast metal oxide thin film electrocatalysts for oxygen evolution.

    PubMed

    Trotochaud, Lena; Ranney, James K; Williams, Kerisha N; Boettcher, Shannon W

    2012-10-17

    Water oxidation is a critical step in water splitting to make hydrogen fuel. We report the solution synthesis, structural/compositional characterization, and oxygen evolution reaction (OER) electrocatalytic properties of ~2-3 nm thick films of NiO(x), CoO(x), Ni(y)Co(1-y)O(x), Ni(0.9)Fe(0.1)O(x), IrO(x), MnO(x), and FeO(x). The thin-film geometry enables the use of quartz crystal microgravimetry, voltammetry, and steady-state Tafel measurements to study the electrocatalytic activity and electrochemical properties of the oxides. Ni(0.9)Fe(0.1)O(x) was found to be the most active water oxidation catalyst in basic media, passing 10 mA cm(-2) at an overpotential of 336 mV with a Tafel slope of 30 mV dec(-1) with oxygen evolution reaction (OER) activity roughly an order of magnitude higher than IrO(x) control films and similar to the best known OER catalysts in basic media. The high activity is attributed to the in situ formation of layered Ni(0.9)Fe(0.1)OOH oxyhydroxide species with nearly every Ni atom electrochemically active. In contrast to previous reports that showed synergy between Co and Ni oxides for OER catalysis, Ni(y)Co(1-y)O(x) thin films showed decreasing activity relative to the pure NiO(x) films with increasing Co content. This finding is explained by the suppressed in situ formation of the active layered oxyhydroxide with increasing Co. The high OER activity and simple synthesis make these Ni-based catalyst thin films useful for incorporating with semiconductor photoelectrodes for direct solar-driven water splitting or in high-surface-area electrodes for water electrolysis.

  3. Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films

    SciTech Connect

    Jolly Bose, R.; Kumar, R. Vinod; Sudheer, S. K.; Mahadevan Pillai, V. P.; Reddy, V. R.; Ganesan, V.

    2012-12-01

    Silver incorporated tungsten oxide thin films are prepared by RF magnetron sputtering technique. The effect of silver incorporation in micro structure evolution, phase enhancement, band gap tuning and other optical properties are investigated using techniques such as x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and UV-Visible spectroscopy. Effect of silver addition in phase formation and band gap tuning of tungsten oxide thin films are investigated. It is found that the texturing and phase formation improves with enhancement in silver content. It is also found that as the silver incorporation enhances the thickness of the films increases at the same time the strain in the film decreases. Even without annealing the desired phase can be achieved by doping with silver. A broad band centered at the wavelength 437 nm is observed in the absorption spectra of tungsten oxide films of higher silver incorporation and this can be attributed to surface plasmon resonance of silver atoms present in the tungsten oxide matrix. The transmittance of the films is decreased with increase in silver content which can be due to increase in film thickness, enhancement of scattering, and absorption of light caused by the increase of grain size, surface roughness and porosity of films and enhanced absorption due to surface plasmon resonance of silver. It is found that silver can act as the seed for the growth of tungsten oxide grains and found that the grain size increases with silver content which in turn decreases the band gap of tungsten oxide from 3.14 eV to 2.70 eV.

  4. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.

    PubMed

    Liu, Jun; Buchholz, D Bruce; Hennek, Jonathan W; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

    2010-09-01

    Optically transparent and mechanically flexible thin-film transistors (TF-TFTs) composed exclusively of amorphous metal oxide films are fabricated on plastic substrates by combining an amorphous Ta(2)O(5)/SiO(x) bilayer transparent oxide insulator (TOI) gate dielectric with an amorphous zinc-indium-tin oxide (a-ZITO) transparent oxide semiconductor (TOS) channel and a-ZITO transparent oxide conductor (TOC) electrodes. The bilayer gate dielectric is fabricated by the post-cross-linking of vapor-deposited hexachlorodisiloxane-derived films to form thin SiO(x) layers (v-SiO(x)) on amorphous Ta(2)O(5) (a-Ta(2)O(5)) films grown by ion-assisted deposition at room temperature. The a-Ta(2)O(5)/v-SiO(x) bilayer TOI dielectric integrates the large capacitance of the high dielectric constant a-Ta(2)O(5) layer with the excellent dielectric/semiconductor interfacial compatibility of the v-SiO(x) layer in a-ZITO TOS-based TF-TFTs. These all-amorphous-oxide TF-TFTs, having a channel length and width of 100 and 2000 microm, respectively, perform far better than a-Ta(2)O(5)-only devices and exhibit saturation-regime field-effect mobilities of approximately 20 cm(2)/V x s, on-currents >10(-4) A, and current on-off ratios >10(5). These TFTs operate at low voltages (approximately 4.0 V) and exhibit good visible-region optical transparency and excellent mechanical flexibility.

  5. Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Skarlinski, Michael D.; Quesnel, David J.

    2015-12-01

    Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu2O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the films

  6. Characterization of sputtered iridium oxide thin films on planar and laser micro-structured platinum thin film surfaces for neural stimulation applications

    NASA Astrophysics Data System (ADS)

    Thanawala, Sachin

    Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.

  7. Thermal stimulated current response in cupric oxide single crystal thin films over a wide temperature range

    NASA Astrophysics Data System (ADS)

    Yang, Kungan; Wu, Shuxiang; Yu, Fengmei; Zhou, Wenqi; Wang, Yunjia; Meng, Meng; Wang, Gaili; Zhang, Yueli; Li, Shuwei

    2017-01-01

    Cupric oxide single crystal thin films (~26 nm) were grown by plasma-assisted molecular beam epitaxy. X-ray diffraction, Raman spectra and in situ reflection high-energy electron diffraction show that the thin films are 2  ×  2 reconstructed with an in-plane compression and out-of-plane stretching. A thermal stimulated current measurement indicates that the electric polarization response is shown in the special 2D cupric oxide single crystal thin film over a wide temperature range from 130 K to near-room temperature. We infer that the abnormal electric response involves the changing of phase transition temperature induced by structure distortion, the spin frustration and the magnetic fluctuation effect of a short-range magnetic order, or the combined action of both of the two factors mentioned above. This work suggests a promising clue for finding new room temperature single phase multiferroics or tuning phase transition temperatures.

  8. Investigation of the preparation and properties of organic dye/metal oxide composite thin films

    NASA Astrophysics Data System (ADS)

    Jaeger, Steffen; Neumann, F.; Klages, Claus-Peter

    1994-11-01

    In this study the growth, structure and physical, particularly optical properties of composite thin films (copper-phthalocyanine-SiO2) with different dye contents are investigated by means of optical spectroscopy (UV-IR), electron probe micro analysis, atomic force microscopy and scanning electron microscopy measurements and compared with the properties of pure dye thin films of different thicknesses and dye/metal oxide multilayer structures, respectively. The composite thin films show spectral shifts and changes in the extension and the intensity of the typical absorption bands in the visible spectral range depending on the dye concentration in the composites. This behavior is accompanied by pronounced color changes, e.g. from blue-green to green in the CuPc-SiO2 system. The results show, that the CuPc- SiO2 composite properties are mainly influenced by the size and kind of dye aggregates in the films (monomer, dimer) and not by interaction of dye molecules with the metal oxide matrix.

  9. Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

    NASA Astrophysics Data System (ADS)

    Ali, N. I. Mohd; Misran, N.; Mansor, M. F.; Jamlos, M. F.

    2017-05-01

    This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified.

  10. Interaction of Zr with oxidized and partially reduced ceria thin films

    NASA Astrophysics Data System (ADS)

    Wang, Weijia; Hu, Shanwei; Han, Yong; Pan, Xiao; Xu, Qian; Zhu, Junfa

    2016-11-01

    The growth and electronic properties of Zr on the ceria thin films were studied by X-ray photoelectron spectroscopy, low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and work function measurements. Metallic zirconium was vapor-deposited on the well-ordered fully oxidized CeO2(111) and partially reduced CeO2-x(111) (0 < x < 0.5) thin films, which were epitaxially grown on a Ru(0001) substrate, under ultrahigh vacuum (UHV) conditions. The results show that the deposition of Zr on both ceria surfaces leads to electron transfer from Zr to ceria, accompanied by partial reduction of Ce from Ce4 + to Ce3 + states and oxidation of metallic Zr to Zr4 +. Moreover, with increasing the Zr coverage, the reduction degree of ceria films increases and eventually only Ce3 + is observed at a high coverage of Zr. The STM results suggest that Zr grows two-dimensionally (2D) on the CeO2(111) thin film at low coverages due to the strong interaction between Zr and CeO2(111).

  11. Ionic and electrochemical phenomena induced by structural and chemical defects in oxide thin films

    NASA Astrophysics Data System (ADS)

    Aruta, Carmela

    Interactions at the surfaces/interfaces between complex oxides and gaseous environment are fundamental for the efficiency of many environmental friendly systems and applications. Such interactions can be modified by the intricate interrelationship between microstructure and chemical substitution defects, being their role on functional properties, such as ionic conductivity and surface reaction rates, as particularly relevant as difficult to discriminate. New possibilities in thin film fabrication allow growth of oxide thin films with a more precise control of the structure and chemical stoichiometry, thus unveiling new perspectives in the study of electrochemical effects for physical functionalities, through nanoscale characterizations by complementary state-of-art techniques. As an example of interfacial structural defect effects, we will discuss the case of yttrium doped barium zirconate thin films, where the cation substitutions represent a viable mechanism, alternative to the formation of dislocations near the interface, to relieve the strain building up in the film growing on a highly mismatched substrate, thus providing fast transport pathways together with enhanced interface electrochemical reactivity. The effect of the chemical defects will be further presented in the case of samarium-doped ceria films with different doping concentration. We will explain the role of the trivalent doping on the conduction mechanism, i.e. proton or oxygen ion, which in turns may greatly influence the surface reactivity.

  12. The growth and evolution of thin oxide films on delta-plutonium surfaces

    SciTech Connect

    Garcia Flores, Harry G; Pugmire, David L

    2009-01-01

    The common oxides of plutonium are the dioxide (PuO{sub 2}) and the sesquioxide (Pu{sub 2}O{sub 3}). The structure of an oxide on plutonium metal under air at room temperature is typically described as a thick PuO{sub 2} film at the gas-oxide interface with a thinner PuO{sub 2} film near the oxide-metal substrate interface. In a reducing environment, such as ultra high vacuum, the dioxide (Pu{sup 4+}; O/Pu = 2.0) readily converts to the sesquioxide (Pu{sup 3+}; O/Pu = 1.5) with time. In this work, the growth and evolution of thin plutonium oxide films is studied with x-ray photoelectron spectroscopy (XPS) under varying conditions. The results indicate that, like the dioxide, the sesquioxide is not stable on a very clean metal substrate under reducing conditions, resulting in substoichiometric films (Pu{sub 2}O{sub 3-y}). The Pu{sub 2}O{sub 3-y} films prepared exhibit a variety of stoichiometries (y = 0.2-1) as a function of preparation conditions, highlighting the fact that caution must be exercised when studying plutonium oxide surfaces under these conditions and interpreting resulting data.

  13. Synthesis of Au microwires by selective oxidation of Au-W thin-film composition spreads.

    PubMed

    Hamann, Sven; Brunken, Hayo; Salomon, Steffen; Meyer, Robert; Savan, Alan; Ludwig, Alfred

    2013-02-01

    We report on the stress-induced growth of Au microwires out of a surrounding Au-W matrix by selective oxidation, in view of a possible application as 'micro-Velcro'. The Au wires are extruded due to the high compressive stress in the tungsten oxide formed by oxidation of elemental W. The samples were fabricated as a thin-film materials library using combinatorial sputter deposition followed by thermal oxidation. Sizes and shapes of the Au microwires were investigated as a function of the W to Au ratio. The coherence length and stress state of the Au microwires were related to their shape and plastic deformation. Depending on the composition of the Au-W precursor, the oxidized samples showed regions with differently shaped Au microwires. The Au48W52 composition yielded wires with the maximum length to diameter ratio due to the high compressive stress in the tungsten oxide matrix. The values of wire length (35 μm) and diameter (2 μm) achieved at the Au48W52 composition are suitable for micro-Velcro applications.

  14. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    SciTech Connect

    Li, Qin; Song, Zhong Xiao; Ma, Fei E-mail: liyhemail@gmail.com; Li, Yan Huai E-mail: liyhemail@gmail.com; Xu, Ke Wei

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  15. Polymer-assisted deposition of co-doped zinc oxide thin films for the detection of aromatic organic compounds.

    PubMed

    Li, Wei; Kim, Dojin

    2011-12-01

    Co-doped Zinc oxide thin films are deposited onto SiO2/Si substrate by polymer-assisted deposition method. The surface morphology, structures and chemical states of the thin films are examined by scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The gas-sensing properties of the thin films upon exposure to aromatic organic compound vapors are also investigated. Co-doping is shown to be very effective in enhancing the response of ZnO thin film to aromatic organic compound.

  16. Investigations on MGy ionizing dose effects in thin oxides of micro-electronic devices

    SciTech Connect

    Gaillardin, M.; Paillet, P.; Raine, M.; Martinez, M.; Marcandella, C.; Duhamel, O.; Richard, N.; Leray, J.L.; Goiffon, V.; Corbiere, F.; Rolando, S.; Molina, R.; Magnan, P.; Girard, S.; Ouerdane, Y.; Boukenter, A.

    2015-07-01

    Total ionizing dose (TID) effects have been studied for a long time in micro-electronic components designed to operate in natural and artificial environments. In most cases, TID induces both charge trapping in the bulk of irradiated oxides and the buildup of interface traps located at semiconductor/dielectric interfaces. Such effects result from basic mechanisms driven by both the shape of the electric field which stands into the oxide and by fabrication process parameters inducing pre-existing traps in the oxide's bulk. From the pioneering studies based on 'thick' oxide technologies to the most recent ones dedicated to innovative technologies, most studies concluded that the impact of total ionizing dose effects reduces with the oxide thinning. This is specifically the case for the gate-oxide of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) for which it is generally considered that TID is not a major issue anymore at kGy dose ranges. TID effects are now mainly due to charge trapping in the field oxides such as Shallow Trench Isolation. This creates either parasitic conduction paths or Radiation-Induced Narrow Channel Effects (RINCE). Static current-voltage (I-V) electrical characteristics are then modified through a significant increase of the off-current of NMOS transistors or by shifting the whole I-V curves (of both NMOS and PMOS transistors). Based on these assumptions, no significant shift of I-V curves should be observed in modern bulk CMOS technologies. However, such phenomenon may not be directly extrapolated to higher TID ranges, typically of several MGy for which only few data are available in the literature. This paper presents evidences of large threshold voltage shifts measured at MGy dose levels despite the fact that transistors are designed in a submicron bulk technology which features a 7-nm thin gate-oxide on GO2 transistors dedicated to mixed analog/digital integrated circuits. Such electrical shifts are encountered on PMOS

  17. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.

    PubMed

    Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang

    2015-09-21

    : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10(-)⁴ Ω/cm), carrier concentration (4.1 × 10(21) cm(-)³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10(21) cm(-)³) with a high figure of merit (81.1 × 10(-)³ Ω(-)¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  18. Synthesis of Tantalum-Doped Tin Oxide Thin Films by Magnetron Sputtering for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc Minh; Luu, Manh Quynh; Nguyen, Minh Hieu; Nguyen, Duy Thien; Bui, Van Diep; Truong, Thanh Tu; Pham, Van Thanh; Nguyen-Tran, Thuat

    2017-06-01

    Tantalum-doped tin oxide transparent conductive thin films were deposited on glass substrates by radio frequency and direct current reactive magnetron co-sputtering methods in an argon and oxygen environment. Optimization of the thin films for photovoltaic applications was performed using a dimensionless figure of merit by combining electrical and transparency properties. The optimized thin film showed a weight-averaged transmittance of 83%, a band gap value of 3.2 eV, resistivity of 5.2 × 10-3 Ω cm, and bulk carrier concentration of 1.2 × 1020 cm-3. The lowest resistivity among all films was 2.1 × 10-3 Ω cm, corresponding to a weight-averaged transmittance of 62%. The optimized deposition condition was carried out by co-sputtering on heated substrates at 270°C. Thin films deposited under this optimized condition were applied for our perovskite solar cells, and demonstrated promising power conversion efficiency.

  19. Lattice distortion and electronic structure of magnesium-doped nickel oxide epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Chen, Yanna; Sakata, Osami; Yamauchi, Ryosuke; Yang, Anli; Kumara, Loku Singgappulige Rosantha; Song, Chulho; Palina, Natalia; Taguchi, Munetaka; Ina, Toshiaki; Katsuya, Yoshio; Daimon, Hiroshi; Matsuda, Akifumi; Yoshimoto, Mamoru

    2017-06-01

    Magnesium-doped nickel oxide (MgxNi1 -xO ) thin films are transparent over a wide ultraviolet-visible spectral range and over a wide Mg content range. However, the influence of the Mg dopant on the structure and properties of NiO films is poorly understood. In this work, the lattice distortion and the electronic structure of MgxNi1 -xO (0 ≤x ≤0.52 ) thin films deposited on ultrasmooth sapphire substrates were investigated using synchrotron x rays. Films with higher Mg content had lower values of Debye temperature and atomic order parameter. The nearest Ni-O distance and the in-plane nearest Ni-Ni distance both expanded with increasing Mg content. The Ni 2 p core-level spectra and the valence band spectra of the MgxNi1 -xO thin films showed complex multiplet structures that were caused by the strong electron correlation in the Ni 3 d states, where the spectral features are strongly dependent on both the distortion of the NiO6 octahedra and the Mg content. We found that the electronic structures are mainly a result of hybridization of Ni 3 d and O 2 p in the NiO6 octahedra and the reduction of the Zhang-Rice bound state following Mg doping. Finally, the flexibility of the band gap tuning in MgxNi1 -xO thin films is explained.

  20. State-of-the-art Thin Film Electrolytes For Solid Oxide Fuel Cells

    SciTech Connect

    Thevuthasan, Suntharampillai; Nandasiri, Manjula I.

    2015-02-19

    State-of-the-Art solid oxide fuel cells (SOFC) are amongst the main candidates for clean energy technology due to their high efficiency, fuel flexibility, low air pollution, and minimal greenhouse gas emission. However, high operational temperature of SOFC is a greater challenge in commercialization these devices for low cost and portable applications. High temperature operation of SOFC degrades its performance with aging, limits the selection of materials for fuel cell components, and increases the fabrication cost. Thus, there have been enormous efforts to improve the properties of existing materials and develop new materials for SOFC components in order to lower the operating temperature of SOFC. Recent advances in thin film technology have also been utilized to develop new materials with improved properties for SOFC. One of the key components in SOFC is the electrolyte and several research groups are working on developing new electrolyte materials. In this chapter, we will discuss the recent advances in thin film SOFC electrolytes. This extensive discussion includes the evolution of doped ceria, doped zirconia, and multilayer hetero-structured thin film electrolytes. The newly developed nanoscale thin films and multi-layer hetero-structures with improved oxygen ionic conductivity will have significant impact on SOFC devices.

  1. Synthesis of Tantalum-Doped Tin Oxide Thin Films by Magnetron Sputtering for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc Minh; Luu, Manh Quynh; Nguyen, Minh Hieu; Nguyen, Duy Thien; Bui, Van Diep; Truong, Thanh Tu; Pham, Van Thanh; Nguyen-Tran, Thuat

    2017-01-01

    Tantalum-doped tin oxide transparent conductive thin films were deposited on glass substrates by radio frequency and direct current reactive magnetron co-sputtering methods in an argon and oxygen environment. Optimization of the thin films for photovoltaic applications was performed using a dimensionless figure of merit by combining electrical and transparency properties. The optimized thin film showed a weight-averaged transmittance of 83%, a band gap value of 3.2 eV, resistivity of 5.2 × 10-3 Ω cm, and bulk carrier concentration of 1.2 × 1020 cm-3. The lowest resistivity among all films was 2.1 × 10-3 Ω cm, corresponding to a weight-averaged transmittance of 62%. The optimized deposition condition was carried out by co-sputtering on heated substrates at 270°C. Thin films deposited under this optimized condition were applied for our perovskite solar cells, and demonstrated promising power conversion efficiency.

  2. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.

    PubMed

    Jaehnike, Felix; Pham, Duy Vu; Anselmann, Ralf; Bock, Claudia; Kunze, Ulrich

    2015-07-01

    A silicon oxide gate dielectric was synthesized by a facile sol-gel reaction and applied to solution-processed indium oxide based thin-film transistors (TFTs). The SiOx sol-gel was spin-coated on highly doped silicon substrates and converted to a dense dielectric film with a smooth surface at a maximum processing temperature of T = 350 °C. The synthesis was systematically improved, so that the solution-processed silicon oxide finally achieved comparable break downfield strength (7 MV/cm) and leakage current densities (<10 nA/cm(2) at 1 MV/cm) to thermally grown silicon dioxide (SiO2). The good quality of the dielectric layer was successfully proven in bottom-gate, bottom-contact metal oxide TFTs and compared to reference TFTs with thermally grown SiO2. Both transistor types have field-effect mobility values as high as 28 cm(2)/(Vs) with an on/off current ratio of 10(8), subthreshold swings of 0.30 and 0.37 V/dec, respectively, and a threshold voltage close to zero. The good device performance could be attributed to the smooth dielectric/semiconductor interface and low interface trap density. Thus, the sol-gel-derived SiO2 is a promising candidate for a high-quality dielectric layer on many substrates and high-performance large-area applications.

  3. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  4. Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

    SciTech Connect

    Lee, Yun Seog; Winkler, Mark T.; Siah, Sin Cheng; Brandt, Riley; Buonassisi, Tonio

    2011-05-09

    Cuprous oxide (Cu{sub 2}O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu{sub 2}O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu{sub 2}O at temperatures above 250 K, reaching 62 cm{sup 2}/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu{sub 2}O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

  5. Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

    PubMed Central

    Wei Shih, Chen; Chin, Albert; Fu Lu, Chun; Fang Su, Wei

    2016-01-01

    High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals. PMID:26744240

  6. Electrochromic performance of Ni oxide thin films intercalated with Li+ ions

    NASA Astrophysics Data System (ADS)

    Wen, Rui-Tao; Niklasson, Gunnar A.; Granqvist, Claes G.

    2014-11-01

    Porous Ni oxide thin films were deposited on unheated ITO/glass substrates by sputtering in argon-oxygen. The as-deposited thin films have a cubic NiO structure and still exhibit such a structure after 10,000 electrochemical cycles in 1 M LiClO4 in propylene carbonate in the range between 2.0 and 4.1 V vs Li/Li+. Electrochromic performance showed a rapid drop of charge density over the first hundreds of cycles and subsequently a very slow decrease. The charge density was 87% of the initial one after 1,000 cycles and 82% after 10,000 cycles, indicating an extremely slow decay after 1,000 cycles. Optical modulation was also slightly decreased after 10,000 cycles, which is due to the drop of charge density.

  7. Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

    NASA Astrophysics Data System (ADS)

    Mora, Angel; Khan, Kamran A.; El Sayed, Tamer

    2014-11-01

    Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show that the new model is suitable for cyclic loading. After calibration with experimental data, we are able to capture the stress-strain behavior and changes in electrical resistance of ITO thin films. We are also able to predict the crack density using calibrations from our previous model. Finally, we demonstrate the capabilities of our model based on simulations using material properties reported in the literature. Our model is implemented in the commercially available finite element software ABAQUS using a user subroutine UMAT. [Figure not available: see fulltext.

  8. Colored and transparent oxide thin films prepared by magnetron sputtering: the glass blower approach.

    PubMed

    Gil-Rostra, Jorge; Chaboy, Jesús; Yubero, Francisco; Vilajoana, Antoni; González-Elipe, Agustín R

    2013-03-01

    This work describes the reactive magnetron sputtering processing at room temperature of several mixed oxide MxSiyOz thin films (M: Fe, Ni, Co, Mo, W, Cu) intended for optical, coloring, and aesthetic applications. Specific colors can be selected by adjusting the plasma gas composition and the Si-M ratio in the magnetron target. The microstructure and chemistry of the films are characterized by a large variety of techniques including X-ray photoemission spectroscopy, X-ray absorption spectroscopy (XAS), and infrared spectroscopy, while their optical properties are characterized by UV-vis transmission and reflection analysis. Particularly, XAS analysis of the M cations in the amorphous thin films has provided valuable information about their chemical state and local structure. It is concluded that the M cations are randomly distributed within the SiO2 matrix and that both the M concentration and its chemical state are the key parameters to control the final color of the films.

  9. Preparation of vanadium oxide thin films modified with Ag using a hybrid deposition configuration

    NASA Astrophysics Data System (ADS)

    Gonzalez-Zavala, F.; Escobar-Alarcón, L.; Solís-Casados, D. A.; Rivera-Rodríguez, C.; Basurto, R.; Haro-Poniatowski, E.

    2016-04-01

    The application of a hybrid deposition configuration, formed by the interaction of a laser ablation plasma with a flux of atomic vapor, to deposit vanadium oxide thin films modified with different amounts of silver, is reported. The effect of the amount of Ag incorporated in the films on their structural, morphological, compositional and optical properties was studied. The obtained results reveal that films with variable Ag content from 11.7 to 24.6 at.% were obtained. Depending on the silver content, the samples show very different surface morphologies. Optical characterization indicates the presence of nanostructures of Ag. Thin films containing silver exhibit better photocatalytic performances than unmodified V2O5 films. Raman spectra reveal that as the silver content is increased, the signals associated with V2O5 disappear and new modes attributed mainly to silver vanadates appear suggesting the formation of ternary compounds.

  10. Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Sarath Kumar, S. R.; Abutaha, Anas I.; Hedhili, M. N.; Alshareef, H. N.

    2012-01-01

    The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258-133 S cm-1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8-3.2 me), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

  11. Characterization and simulation on antireflective coating of amorphous silicon oxide thin films with gradient refractive index

    NASA Astrophysics Data System (ADS)

    Huang, Lu; Jin, Qi; Qu, Xingling; Jin, Jing; Jiang, Chaochao; Yang, Weiguang; Wang, Linjun; Shi, Weimin

    2016-08-01

    The optical reflective properties of silicon oxide (SixOy) thin films with gradient refractive index are studied both theoretically and experimentally. The thin films are widely used in photovoltaic as antireflective coatings (ARCs). An effective finite difference time domain (FDTD) model is built to find the optimized reflection spectra corresponding to structure of SixOy ARCs with gradient refractive index. Based on the simulation analysis, it shows the variation of reflection spectra with gradient refractive index distribution. The gradient refractive index of SixOy ARCs can be obtained in adjustment of SiH4 to N2O ratio by plasma-enhanced chemical vapor deposition (PECVD) system. The optimized reflection spectra measured by UV-visible spectroscopy confirms to agree well with that simulated by FDTD method.

  12. Polymer waveguide sensor with tin oxide thin film integrated onto optical-electrical printed circuit board

    NASA Astrophysics Data System (ADS)

    Lim, Jung Woon; Kim, Seon Hoon; Kim, Jong-Sup; Kim, Jeong Ho; Kim, Yune Hyoun; Lim, Ju Young; Im, Young-Eun; Park, Jong Bok; Hann, Swook

    2014-05-01

    In this study, we proposed and fabricated optical sensor module integrated onto optical-electrical printed circuit board (PCB) for gas detection based on polymer waveguide with tin oxide thin film. Their potential application as gas sensors are confirmed through computational simulation using the two dimensional finite-difference time-domain method (2DFDTD). Optical-electrical PCB was integrated into vertical cavity surface emitting laser (VCSEL), photodiode and polymeric sensing device was fabricated by the nano-imprint lithography technique. SnO2 thin film of 100nm thickness was placed on the surface of core layer exposed by removing the specific area of the upper cladding layer of 300 μm length and 50 μm width. The performance of the device was measured experimentally. Initial study on the sensor performance for carbon monoxide gas detection indicated good sensitivity.

  13. The solution growth route and characterization of electrochromic tungsten oxide thin films

    SciTech Connect

    Todorovski, Toni; Najdoski, Metodija

    2007-12-04

    Electrochromic tungsten oxide thin films were prepared by using an aqueous solution of Na{sub 2}WO{sub 4}.2H{sub 2}O and dimethyl sulfate. Various techniques were used for the characterization of the films such as X-ray diffraction, cyclic voltammetry, SEM analysis and VIS-spectroscopy. The thin film durability was tested in an aqueous solution of LiClO{sub 4} (0.1 mol/dm{sup 3}) for about 7000 cycles followed by cyclic voltammetry. No significant changes in the cyclic voltammograms were found, thus proving the high durability of the films. The optical transmittance spectra of coloured and bleached states showed significant change in the transmittance, which makes these films favorable for electrochromic devices.

  14. Molecular and electronic structure of organic semiconductors on ultra-thin oxide films

    NASA Astrophysics Data System (ADS)

    Conrad, Brad; Cullen, William; Williams, Ellen

    2009-03-01

    We utilize scanning tunneling microscopy (STM) to molecularly image and probe the interactions of organic semiconductors. To mimic a device substrate and growth modes, ultra-thin oxide (UTO) films less than 1 nm thick are grown on Si(111) in ultrahigh vacuum at room temperature. These films are characterized by STM and display a long range RMS roughness of 0.109 nm versus a typical RMS roughness of 0.3 nm for thick SiO2. UTO films are then used as substrates for growth of pentacene, C60, and PCBM. Standing up pentacene is molecularly resolved and described by a thin-film phase unit cell with a=0.76nm and b=0.59nm in the ab-plane. The morphology and electronic structure of co-depositions of pentacene, C60, and PCBM are then deposited on UTO films and will be presented. http://arxiv.org/abs/0811.2515

  15. Extracting the effective mass of electrons in transparent conductive oxide thin films using Seebeck coefficient

    SciTech Connect

    Wang, Yaqin; Zhu, Junhao; Tang, Wu

    2014-05-26

    A method is proposed that combines Seebeck coefficient and carrier concentration to determine the electron effective mass of transparent conductive oxide (TCO) thin films. Experiments were conducted to test the validity of this approach on the transparent conductive Ga-doped ZnO thin films deposited by magnetron sputtering. An evident agreement of the calculated electron effective mass of the films is observed between the proposed approach and the previous studies. Besides, the optical carrier concentration and mobility derived from the calculated electron effective mass and spectroscopic ellipsometry using a complex dielectric function are consistent with those from direct Hall-effect measurement. The agreements suggest that Seebeck coefficient can serve as an alternative tool for extracting the effective mass of electrons in TCO films.

  16. Sensor activity in pulsed laser deposited and ion implanted tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Lal, Ram; Grover, Rajni; Vispute, R. D.; Viswanathan, R.; Godbole, V. P.; Ogale, S. B.

    In this report we report the effect of microstructural variations on sensing activity of SnO2 thin films. The tin oxide thin films are deposited by using the technique of pulsed laser ablation. The process parameters, i.e. oxygen partial pressure, are varied to obtain films with different stoichiometries and microstructures. Some of these films are bombarded with medium energy (140 keV) argon ions at various dose levels. Structural and compositional variations in the films have been studied by using low angle X-ray diffraction, Moessbauer spectroscopy and in-situ resistivity measurements while optical response has been monitored by using UV-visible spectroscopy. The films synthesized and processed under different conditions have been subjected to examination of gas and humidity sensing behavior.

  17. Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

    SciTech Connect

    Cho, Byungsu; Choi, Yonghyuk; Shin, Seokyoon; Jeon, Heeyoung; Seo, Hyungtak; Jeon, Hyeongtag

    2014-01-27

    We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

  18. Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

    NASA Astrophysics Data System (ADS)

    Mitoma, Nobuhiko; Da, Bo; Yoshikawa, Hideki; Nabatame, Toshihide; Takahashi, Makoto; Ito, Kazuhiro; Kizu, Takio; Fujiwara, Akihiko; Tsukagoshi, Kazuhito

    2016-11-01

    The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO4 tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO6 octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ˜0.2 eV.

  19. Effect of thickness on nonlinear absorption properties of graphite oxide thin films

    NASA Astrophysics Data System (ADS)

    Sreeja, V. G.; Cheruvalathu, Ajina; Reshmi, R.; Anila, E. I.; Thomas, Sheenu; Jayaraj, M. K.

    2016-10-01

    We report the thickness dependent structural, linear and nonlinear optical properties of graphite oxide (GO) thin films synthesized by spin coating method. We observed that the structural, linear and nonlinear optical properties can be tuned by the film thickness in GO. The nonlinear absorption studies by open aperture z scan technique exhibited a saturable absorption. The nonlinear absorption coefficient and saturation intensity varies with film thickness which is attributed to increased localized defect states in the energy band gap. Our results emphasize relatively large thickness dependent optical nonlinearity of GO thin films and its potential for optical pulse generation, exploring the way to GO based nonlinear applications in Q switched mode locking laser systems. All the coated GO films were characterized by X-Ray diffraction method (XRD), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, UV-Vis absorption spectroscopy (UV-Vis), Photoluminescence (PL) and Scanning electron microscope (SEM) measurements.

  20. Subtractive Plasma-Assisted-Etch Process for Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors

    DTIC Science & Technology

    2015-03-26

    SUBTRACTIVE PLASMA -ASSISTED- ETCH PROCESS FOR DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE...Government and is not subject to copyright protection in the United States. AFIT-ENG-MS-15-M-027 SUBTRACTIVE PLASMA -ASSISTED- ETCH PROCESS FOR...15-M-027 SUBTRACTIVE PLASMA -ASSISTED- ETCH PROCESS FOR DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE THIN-FILM-TRANSISTORS Thomas

  1. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  2. Perpendicular magnetic anisotropy in thin ferromagnetic films adjacent to high-k oxides

    NASA Astrophysics Data System (ADS)

    Xu, Meng; Bi, Chong; Rosales, Marcus; Newhouse-Illige, Ty; Almasi, Hamid; Wang, Weigang

    2015-03-01

    Perpendicular magnetic anisotropy (PMA) in thin ferromagnetic films has attracted a great deal of attention due to interesting physics and promising application in spintronic devices. The strength of PMA is often found to be strongly influenced by the adjacent heavy metal layer and oxide layer. A strong interest has emerged recently to control the PMA of these ultra-thin films by electric fields. Here we report the fabrication and characterization of perpendicularly magnetized 3d transitional metal films next to high-k oxides such as HfO2 and ZrO2. We have investigated structural, magnetic and transport properties of these films. The PMA strongly depends on the thickness of the ferromagnetic layers and the interfacial oxidation level of the bilayers. We will also discuss electric field controlled magnetic properties in these systems. This work was supported in part by NSF (ECCS-1310338) and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  3. Optical, structural and electrochromic properties of sputter- deposited W-Mo oxide thin films

    NASA Astrophysics Data System (ADS)

    Gesheva, K.; Arvizu, M. A.; Bodurov, G.; Ivanova, T.; Niklasson, G. A.; Iliev, M.; Vlakhov, T.; Terzijska, P.; Popkirov, G.; Abrashev, M.; Boyadjiev, S.; Jágerszki, G.; Szilágyi, I. M.; Marinov, Y.

    2016-10-01

    Thin metal oxide films were investigated by a series of characterization techniques including impedance spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, and Atomic Force Microscopy. Thin film deposition by reactive DC magnetron sputtering was performed at the Ångström Laboratory. W and Mo targets (5 cm diameter) and various oxygen gas flows were employed to prepare samples with different properties, whereas the gas pressure was kept constant at about 30 mTorr. The substrates were 5×5 cm2 plates of unheated glass pre-coated with ITO having a resistance of 40 ohm/sq. Film thicknesses were around 300 nm as determined by surface profilometry. Newly acquired equipment was used to study optical spectra, optoelectronic properties, and film structure. Films of WO3 and of mixed W- Mo oxide with three compositions showed coloring and bleaching under the application of a small voltage. Cyclic voltammograms were recorded with a scan rate of 5 mV s-1. Ellipsometric data for the optical constants show dependence on the amount of MoOx in the chemical composition. Single MoOx film, and the mixed one with only 8% MoOx have the highest value of refractive index, and similar dispersion in the visible spectral range. Raman spectra displayed strong lines at wavenumbers between 780 cm-1 and 950 cm-1 related to stretching vibrations of WO3, and MoO3. AFM gave evidence for domains of different composition in mixed W-Mo oxide films.

  4. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

    PubMed Central

    Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui; Kehagias, Thomas; Dimitrakopulos, George; Amassian, Aram; Patsalas, Panos A.; Anthopoulos, Thomas D.

    2017-01-01

    Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications. PMID:28435867

  5. Effect of Polyaniline additions on structural and gas sensing behaviour of metal oxides thin films

    NASA Astrophysics Data System (ADS)

    Hj. Jumali, Mohammad H.; Izzuddin, Izura; Ramli, Norhashimah; Mat Salleh, Muhamad; Yahaya, Muhammad

    2009-07-01

    The structural and gas sensing behaviour of metal oxides namely TiO2 and ZnO thin films were investigated. In this paper, commercial Polyaniline (PANi) powder were added into two different metal oxides sol gel solutions with PANi : metal oxides weight ratios of 1wt.%, 2wt.% and 3wt.%. The thin films were fabricated using spin coating technique. Structural investigation using XRD presented that all films exhibited amorphous structure. Typical films surface morphology consists of agglomerated round shaped particles with the particles size varies between 57nm to 200nm. Addition of PANi formed network chains between the particles. Ethanol vapor detection test conducted at room temperature showed that both TiO2 and ZnO based films were capable to sense the vapor. The optimum ratio in sensing ethanol vapour for both PANi-TiO2 and PANi-ZnO films was 3:1. However, other issues such as reliability, selectability and repeatability remain as the major problems.

  6. Disordered surface structure of an ultra-thin tin oxide film on Rh(100)

    SciTech Connect

    Zenkyu, R.; Tajima, D.; Yuhara, J.

    2012-03-15

    The composition and structure of an ultra-thin tin oxide film on Rh(100), prepared by the deposition of a submonolayer of tin followed by annealing in an O{sub 2} atmosphere, were examined by a combination of low-energy electron diffraction (LEED), Auger electron spectroscopy, X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and ab initio calculations based on density functional theory (DFT). Although the LEED pattern exhibited c(2 x 8) spots clearly, a uniform periodicity of the c(2 x 8) unit cell was not observed in the STM images. The bright dots that were observed periodically in the STM image were similar to those of the ultra-thin Sn{sub 2}O{sub 3} film on Rh(111) and formed a zigzag arrangement with the numerous point and line defects. The XPS study revealed that the Sn 3d{sub 5/2} peak of the tin oxide film on Rh(100) showed a metallic state as well as an oxide state that was between the SnO{sub 2} and SnO states. The structural models, which were based on the Sn{sub 2}O{sub 3} structure on Rh(111), were determined using DFT total energy calculations. The simulated STM images of the two slightly different honeycomb-chain models well reproduced the zigzag arrangement in the STM image. The STM image and XPS spectrum were interpreted using a combination of the two models.

  7. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    NASA Astrophysics Data System (ADS)

    Argibay, N.; Mogonye, J. E.; Michael, J. R.; Goeke, R. S.; Kotula, P. G.; Scharf, T. W.; Dugger, M. T.; Prasad, S. V.

    2015-04-01

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situ electrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea = 12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol. % ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. The proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.

  8. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    DOE PAGES

    Argibay, Nicolas; Mogonye, J. E.; Michael, Joseph R.; ...

    2015-04-08

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situelectrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilizedmore » grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea =12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. As a result, the proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.« less

  9. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    SciTech Connect

    Argibay, Nicolas; Mogonye, J. E.; Michael, Joseph R.; Goeke, Ronald S.; Kotula, Paul G.; Scharf, T. W.; Dugger, Michael Thomas; Prasad, Somuri V.

    2015-04-08

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situelectrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea =12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. As a result, the proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.

  10. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    SciTech Connect

    Argibay, N. Mogonye, J. E.; Michael, J. R.; Goeke, R. S.; Kotula, P. G.; Scharf, T. W.; Dugger, M. T.; Prasad, S. V.

    2015-04-14

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situ electrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of E{sub a} = 21.6 kJ/mol and A{sub o} = 2.3 × 10{sup −17} m{sup 2}/s for Au-1 vol. % ZnO and E{sub a} = 12.7 kJ/mol and A{sub o} = 3.1 × 10{sup −18} m{sup 2}/s for Au-2 vol. % ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. The proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.

  11. Indium oxide thin film as potential photoanodes for corrosion protection of stainless steel under visible light

    SciTech Connect

    Zhang, Yan; Yu, Jianqiang; Sun, Kai; Zhu, Yukun; Bu, Yuyu; Chen, Zhuoyuan

    2014-05-01

    Graphical abstract: If the conduction band potential of In{sub 2}O{sub 3} is more negative than the corrosion potential of stainless steel, photo-induced electrons will be transferred from In{sub 2}O{sub 3} to the steel, thus shifting the potential of the steel into a corrosion immunity region and preventing the steel from the corrosion. - Highlights: • Indium oxide performed novel application under visible light. • Indium oxide by sol–gel method behaved better photoelectrochemical properties. • Electrons were transferred to stainless steel from indium oxide once light on. - Abstract: This paper reports the photoelectrochemical cathodic protection of 304 stainless steel by In{sub 2}O{sub 3} thin-film under visible-light. The films were fabricated with In{sub 2}O{sub 3} powders, synthesized by both sol–gel (In{sub 2}O{sub 3}-sg) and solid-state (In{sub 2}O{sub 3}-ss) processes. The photo-induced open circuit potential and the photo-to-current efficiency measurements suggested that In{sub 2}O{sub 3} could be a promising candidate material for photoelectrochemical cathodic protection of metallic alloys under visible light. Moreover, the polarization curve experimental results indicated that In{sub 2}O{sub 3}-sg thin-film can mitigate the corrosion potential of 304 stainless steel to much more negative values with a higher photocurrent density than the In{sub 2}O{sub 3}-ss film under visible-light illumination. All the results demonstrated that the In{sub 2}O{sub 3}-sg thin-film provides a better photoelectrochemical cathodic protection for 304 stainless steel than In{sub 2}O{sub 3}-ss thin-film under visible-light illumination. The higher photoelectrochemical efficiency is possibly due to the uniform thin films produced with the smaller particle size of In{sub 2}O{sub 3}-sg, which facilitates the transfer of the photo-induced electrons from bulk to the surface and suppresses the charge recombination of the electrons and holes.

  12. Pulsed laser deposited metal oxide thin films mediated controlled adsorption of proteins

    NASA Astrophysics Data System (ADS)

    Kim, Se Jin

    Several metal oxide thin films were grown on Si substrate by pulsed laser deposition for controlling adsorption of proteins. No intentional heating of substrate and introduction of oxygen gas during growth were employed. Additionally, fibrinogen, bovine serum albumin (BSA), and lysozyme were used as model protein in this study. The film properties such as cyratllinity, surface roughness, surface electrical charge and chemistry were investigated by many techniques in order to obtain the relationship with protein adsorption. Firstly, as grown Ta2O5 and ZnO thin film were used to study the effects of surface charge on the behaviors of BSA and lysozyme adsorption. The protein thickness results by ellipsometry showed that negatively charged Ta2O5 had a stronger affinity to positively charged lysozyme, while positively charged ZnO had a stronger affinity to negatively charged BSA. The results confirmed electrostatic interaction due to surface charge is one of main factors for determining adsorption of proteins. Furthermore, annealing studies were performed by heat treatment of as grown Ta2O5 and ZnO at 800°C in air ambience. Annealed Ta2O5 thin film had almost wetting property (from 10.02° to less than 1˜2°) and the change of cystallinity (from amorphous to cyrsalline) while annealed ZnO thin film had a reduced contact angle (from 75.65° to 39.41°) and remained to crystalline structure. The fibrinogen thickness on annealed Ta2O5 film was increased compared with as grown sample, while heat treated ZnO film showed much reduction of fibrinogen adsorption. Binary Ta-Zn oxide thin films (TZ) were grown by preparing PLD target composed of 50 wt% Ta2O5 and 50 wt% ZnO. This binary film had IEP pH 7.1 indicating nearly neutral charge in pH 7.4 PBS solution, and hydrophilic property. Ellipsometrical results showed that TZ film had the lowest fibrinogen, BSA and lysozyme thickness after 120 min adsorption compared with Ta2O5 and ZnO. Other samples, bilayer oxide films in

  13. Oxidative degradation of acid orange 7 using Ag-doped zinc oxide thin films.

    PubMed

    Shinde, S S; Bhosale, C H; Rajpure, K Y

    2012-12-05

    Ag-doped ZnO thin films with preferred c-axis orientation along (002) have been prepared by spray pyrolysis technique in aqueous medium on to the corning glass substrates. The effect of Ag-doping on to the photoelectrochemical, structural, morphological, optical, luminescence, electrical and thermal properties has been investigated. XRD and Raman study indicates that the films have hexagonal (wurtzite) crystal structure. The effect of Ag loading on the photocatalytic activity of Ag-doped ZnO in the degradation of azo dye is studied and results are compared with pure ZnO. The results show that the rate of degradation of azo dye over Ag-doped ZnO is much higher as compared to pure ZnO. Ag doping in ZnO is highly effective and can significantly enhance the photocatalytic degradation and mineralization of azo dye. The enhancement of photocatalytic activity of Ag-doped ZnO thin films is mainly due to their smaller crystallite size and capability for reducing the electron-hole pair recombination. Kinetic parameters have been investigated in terms of a first order rate equation. The rate constant (-k) for this heterogeneous photocatalysis is evaluated as a function of the initial concentration of original species. Substantial reduction in azo dye is achieved as analyzed from COD and TOC studies.

  14. Structural, optical and electrical properties of yttrium-doped hafnium oxide nanocrystalline thin films

    NASA Astrophysics Data System (ADS)

    Kongu, Abhilash

    Hafnium oxide (HfO2) has emerged as the most promising high-k dielectric for Metal-Oxide-Semiconductor (MOS) devices and has been highlighted as the most suitable dielectric materials to replace silicon oxide because of its comprehensive performance. In the present research, yttrium-doped HfO2 (YDH) thin films were fabricated using RF magnetron sputter deposition onto Si (100) and quartz with a variable thickness. Cross-sectional scanning electron microscopy coupled with Filmetrics revealed that film thickness values range from 700 A° to 7500 A°. Electrical properties such as AC Resistivity and current-voltage (I-V) characteristics of YDH films were studied. YDH films that were relatively thin (<1500 A°) crystallized in monoclinic phase while thicker films crystallized in cubic phase. The band gap (Eg) of the films was calculated from the optical measurements. The band gap was found to be ˜5.60 eV for monoclinic while it is ˜6.05 eV for cubic phase of YDH films. Frequency dependence of the electrical resistivity (rhoac) and the total conductivity of the films were measured. Resistivity decreased (by three orders of magnitude) with increasing frequency from 100 Hz to 1 MHz, attributed due to the hopping mechanism in YDH films. Whereas, while rhoac˜1O-m at low frequencies (100 Hz), it decreased to ˜ 104 O-cm at higher frequencies (1 MHz). Aluminum (Al) metal electrodes were deposited to fabricate a thin film capacitor with YDH layer as dielectric film thereby employing Al-YDH-Si capacitor structure. The results indicate that the capacitance of the films decrease with increasing film thickness. A detailed analysis of the electrical characteristics of YDH films is presented.

  15. Periodic oxidation for fabricating titanium oxynitride thin films via atomic layer deposition

    SciTech Connect

    Iwashita, Shinya Aoyama, Shintaro; Nasu, Masayuki; Shimomura, Kouji; Noro, Naotaka; Hasegawa, Toshio; Akasaka, Yasushi; Miyashita, Kohei

    2016-01-15

    This paper demonstrates thermal atomic layer deposition (ALD) combined with periodic oxidation for synthesizing titanium oxynitride (TiON) thin films. The process used a typical ALD reactor for the synthesis of titanium nitride (TiN) films wherein oxygen was supplied periodically between the ALD-TiN cycles. The great advantage of the process proposed here was that it allowed the TiN films to be oxidized efficiently. Also, a uniform depth profile of the oxygen concentration in the films could be obtained by tuning the oxidation conditions, allowing the process to produce a wide variety of TiON films. The resistivity measurement is a convenient method to confirm the reproducibility of metal film fabrication but may not be applicable for TiON films depending upon the oxidation condition because the films can easily turn into insulators when subjected to periodic oxidation. Therefore, an alternative reproducibility confirmation method was required. In this study, spectroscopic ellipsometry was applied to monitor the variation of TiON films and was able to detect changes in film structures such as conductor–insulator transitions in the TiON films.

  16. A review on the recent developments of solution processes for oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Du Ahn, Byung; Jeon, Hye-Ji; Sheng, Jiazhen; Park, Jozeph; Park, Jin-Seong

    2015-06-01

    This review article introduces the recent advances in the development of oxide semiconductor materials based on solution processes and their potential applications. In the early stage, thin film transistors based on oxide semiconductors fabricated by solution processes used to face critical problems such as high annealing temperatures (>400 °C) required to obtain reasonable film quality, and the relatively low field effect mobility (<5 cm2 V-1 s-1) compared to devices fabricated by conventional vacuum-based techniques. In order to overcome such hurdles, the proper selection of high mobility amorphous oxide semiconductor materials is addressed first. The latter involves the combination of high mobility compounds and multilayered active stacks. Ensuing overviews are provided on the selection of optimum precursors and alternative annealing methods that enable the growth of high quality films at relatively low process temperatures (<200 °C). Reasonably high field effect mobility values (~10 cm2 V-1 s-1) could thus be obtained by optimizing the above process parameters. Finally, potential applications of solution processed oxide semiconductor devices are summarized, involving, for instance, flexible displays, biosensors, and non-volatile memory devices. As such, further innovations in the solution process methods of oxide semiconductor devices are anticipated to allow the realization of cost effective, large area electronics in the near future.

  17. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    NASA Astrophysics Data System (ADS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn3O4, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20-30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 - 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9-10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  18. Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application.

    PubMed

    Zhuang, Jiaqing; Sun, Qi-Jun; Zhou, Ye; Han, Su-Ting; Zhou, Li; Yan, Yan; Peng, Haiyan; Venkatesh, Shishir; Wu, Wei; Li, Robert K Y; Roy, V A L

    2016-11-16

    Previous investigations on rare-earth oxides (REOs) reveal their high possibility as dielectric films in electronic devices, while complicated physical methods impede their developments and applications. Herein, we report a facile route to fabricate 16 REOs thin insulating films through a general solution process and their applications in low-voltage thin-film transistors as dielectrics. The formation and properties of REOs thin films are analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry, water contact angle measurement, X-ray photoemission spectroscopy (XPS), and electrical characterizations, respectively. Ultrasmooth, amorphous, and hydrophilic REO films with thickness around 10 nm have been obtained through a combined spin-coating and postannealing method. The compositional analysis results reveal the formation of RE hydrocarbonates on the surface and silicates at the interface of REOs films annealed on Si substrate. The dielectric properties of REO films are investigated by characterizing capacitors with a Si/Ln2O3/Au (Ln = La, Gd, and Er) structure. The observed low leakage current densities and large areal capacitances indicate these REO films can be employed as alternative gate dielectrics in transistors. Thus, we have successfully fabricated a series of low-voltage organic thin-film transistors based on such sol-gel derived REO films to demonstrate their application in electronics. The optimization of REOs dielectrics in transistors through further surface modification has also been studied. The current study provides a simple solution process approach to fabricate varieties of REOs insulating films, and the results reveal their promising applications as alternative gate dielectrics in thin-film transistors.

  19. Light irradiation tuning of surface wettability, optical, and electric properties of graphene oxide thin films

    NASA Astrophysics Data System (ADS)

    Furio, A.; Landi, G.; Altavilla, C.; Sofia, D.; Iannace, S.; Sorrentino, A.; Neitzert, H. C.

    2017-02-01

    In this work the preparation of flexible polymeric films with controlled electrical conductivity, light transmission and surface wettability is reported. A drop casted graphene oxide thin film is photo-reduced at different levels by UV light or laser irradiation. Optical microscopy, IR spectroscopy, electrical characterization, Raman spectroscopy and static water contact angle measurements are used in order to characterize the effects of the various reduction methods. Correlations between the optical, electrical and structural properties are reported and compared to previous literature results. These correlations provide a useful tool for independently tuning the properties of these films for specific applications.

  20. Effect of aluminium doping on zinc oxide thin films grown by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Manouni, A. El; Manjón, F. J.; Mollar, M.; Marí, B.; Gómez, R.; López, M. C.; Ramos-Barrado, J. R.

    2006-01-01

    We report the structural, optical, and electrical characterization of aluminium-doped zinc oxide thin films grown by the spray pyrolysis method. We report the effect of Al concentration on the resistivity and on the X-ray diffraction, transmittance, photoluminescence and Raman scattering spectra of the films. The minimum resistivity is obtained for the sample with nominal Al concentration of 1%. An increase of the Al doping decreases the quality of the films. The loss of short-range order affects the photoluminescence and resistivity, although the optical transmittance is good, and the decrease of the long-range order affects X-ray diffraction and Raman spectra.

  1. Aqueous process to limit hydration of thin-film inorganic oxides

    NASA Astrophysics Data System (ADS)

    Perkins, Cory K.; Mansergh, Ryan H.; Park, Deok-Hie; Nanayakkara, Charith E.; Ramos, Juan C.; Decker, Shawn R.; Huang, Yu; Chabal, Yves J.; Keszler, Douglas A.

    2016-11-01

    Aqueous-processed aluminum oxide phosphate (AlPO) dielectric films were studied to determine how water desorbs and absorbs on heating and cooling, respectively. In-situ Fourier transform infrared spectroscopy showed a distinct, reversible mono- to bidentate phosphate structural change associated with water loss and uptake. Temperature programmed desorption measurements on a 1-μm thick AlPO film revealed water sorption was inhibited by an aqueous-processed HfO2 capping film only 11-nm thick. The HfO2 capping film prevents water resorption, thereby preserving the exceptional performance of AlPO as a thin-film dielectric.

  2. Hydrogen gas sensors based on electrostatically spray deposited nickel oxide thin film structures

    NASA Astrophysics Data System (ADS)

    Jamal, Raied K.; Aadim, Kadhim A.; Al-Zaidi, Qahtan G.; Taaban, Iman N.

    2015-09-01

    A simple, low-cost, and home-built electrostatic spray deposition (ESD) system with the stable cone-jet mode was used to deposit nickel oxide (NiO) thin films on glass substrates kept at temperature of 400 °C as the primary precursor solution of 0.1 M concentration hydrated nickel chloride was dissolved in isopropyl alcohol. Electrical measurements showed that these films were of n-type conductivity while their resistance response to hydrogen flow in air ambient was varied by 2.81% with the rise and recovery time of 48 s and 40 s, respectively.

  3. Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Koide, Hirotaka; Nagao, Yuki; Koumoto, Kunihito; Takasaki, Yuka; Umemura, Tomonari; Kato, Takeharu; Ikuhara, Yuichi; Ohta, Hiromichi

    2010-11-01

    To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptly increases but then gradually decreases as Vg increases, clearly suggesting the antiparabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.

  4. Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells

    PubMed Central

    Hüpkes, Jürgen; Owen, Jorj I; Pust, Sascha E; Bunte, Eerke

    2012-01-01

    Abstract Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided. PMID:22162035

  5. Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

    SciTech Connect

    Hanna, A. N.; Ghoneim, M. T.; Bahabry, R. R.; Hussain, A. M.; Hussain, M. M.

    2013-11-25

    We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.

  6. Graphene-based thin film supercapacitor with graphene oxide as dielectric spacer

    NASA Astrophysics Data System (ADS)

    Liu, Jinzhang; Galpaya, Dilini; Notarianni, Marco; Yan, Cheng; Motta, Nunzio

    2013-08-01

    Thin film supercapacitors are produced by using electrochemically exfoliated graphene (G) and wet-chemically produced graphene oxide (GO). Either G/GO/G stacked film or sole GO film are sandwiched by two Au films to make devices, where GO is the dielectric spacer. The addition of graphene film can increase the capacitance about two times, compared to the simple Au electrode. It is found that the GO film has very high dielectric constant, accounting for the high capacitance. AC measurement reveals that the relative permittivity of GO is in the order of 104 within the frequency range of 0.1-70 Hz.

  7. Synthesis and characterization of nickel oxide (NiO) thin films

    NASA Astrophysics Data System (ADS)

    Kate, R. S.; Khalate, S. A.; Deokate, R. J.

    2017-05-01

    Nickel Oxide (NiO) thin films were deposited by simple spray pyrolysis technique using nickel nitrate solution onto preheated glass substrate at substrate temperature 320 °C and 380 °C. Influence of substrate temperature on structural, morphological and optical properties were studied using X-ray diffraction, scanning electron microscopy and optical absorption. XRD results reveal that films are polycrystalline with single phase cubic structure and crystallinity of the film increases as the temperature increases. Surface morphological study shows spherical granular like shape at high deposition temperature. Optical band gap increases from 2.85 to 3.01 eV as the temperature increases.

  8. Chemical and optical properties of thermally evaporated manganese oxide thin films

    SciTech Connect

    Al-Kuhaili, M. F.

    2006-09-15

    Manganese oxide thin films were deposited using thermal evaporation from a tungsten boat. Films were deposited under an oxygen atmosphere, and the effects of thickness, substrate temperature, and deposition rate on their properties were investigated. The chemical properties of the films were studied using x-ray photoelectron spectroscopy and x-ray fluorescence. The optical properties were determined from normal-incidence transmittance and reflectance. Based on the chemical and optical characterizations, the optimum conditions for the deposition of the films were investigated. Subsequently, the optical properties (refractive index, extinction coefficient, and band gap) of these films were determined.

  9. Chemical etching of zinc oxide for thin-film silicon solar cells.

    PubMed

    Hüpkes, Jürgen; Owen, Jorj I; Pust, Sascha E; Bunte, Eerke

    2012-01-16

    Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided.

  10. Aligned carbon nanotube, graphene and graphite oxide thin films via substrate-directed rapid interfacial deposition.

    PubMed

    D'Arcy, Julio M; Tran, Henry D; Stieg, Adam Z; Gimzewski, James K; Kaner, Richard B

    2012-05-21

    A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated.

  11. Reduction and Oxidation of Copper Oxide Thin Films and Thermal Stability Issues in Copper-Based Metallization.

    NASA Astrophysics Data System (ADS)

    Li, Jian

    This thesis investigates the oxidation and reduction of Cu-oxides and thermal induced reactions of Cu with metals. The combination of ^{16}O( alpha,alpha)^{16}O oxygen resonance and transmission electron microscopy (TEM) provides an effective method of studying the oxidation and reduction of copper oxide thin films. A discontinuous morphology of grain growth of Cu_2O in found in the CuO matrix during reduction. The migration of the Cu_2O-CuO phase boundary is induced by oxygen diffusion along the moving boundary. Grain growth is the dominant process in the transformation from CuO to Cu_2O; nucleation is the dominant process in the reverse transformation, i.e. from Cu_2O to CuO. The reduction and oxidation of copper oxides are asymmetrical; the latter is significantly faster. The metastable phase Cu _4O_3 was formed by ion milling CuO. Carbon and refractory metals such as Ti or Zr can enhance the reduction rate of CuO. Three topics relating to thermal stability issues in Cu-based metallization were investigated: (1) texturing in electroless copper films on epitaxial copper seed layers; (2) predicting first phase formation in Cu/metal bilayer structures; and (3) encapsulation of Cu fine line structures with TiN. (100)- and (111)-textured copper layers were deposited by electroless plating on copper seed layers grown epitaxially on Si (100) and Si (111) substrates, respectively. (111) -textured copper films are more oxidation-resistant. Rutherford backscattering spectrometry (RBS) and in situ transmission electron microscopy (TEM) were used to determine phase formation in Cu-M (M = Ti, Zr, Mg, Sb, Pd and Pt) bilayer systems. An effective heat of formation rule was employed to predict first phase formation in these systems. A TiN-encapsulated copper structure was made by annealing a Cu-10at%Ti alloy film evaporated on a SiO _2/Si(100) substrate at 550^ circC in an NH_3 ambient. Fast heating rates (70^circC/min.) to 550^circC can effectively suppress the formation of Cu

  12. Study of Ferromagnetic and Field Effect Properties of Zinc Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Xia, Daxue

    Spintronics (spin transport electronics), in which both spm and charge of carriers are utilized for information processing, is perceived to be a candidate to extend and possibly to become the next-generation electronics. Its advantages include nonvolatility (data retention without electrical power), lower energy consumption, faster processing speed, and higher integration densities in comparison with the current semiconductor devices relying solely on electron charge. To realize a spin-field effect transistor, two respects are prerequisite. On the one hand, the mechanism of ferromagnetism should be addressed before one could prepare magnetic semiconductor films in a controllable way. On the other hand, excellent field effect properties should be sought through a convenient and low-cost strategy for manufacturing future nano-scale spintronic devices. This thesis is comprised of two parts. Firstly, it deals with the synthesis, characterization, and magnetism of transition-metal-doped or un-doped zinc oxide (ZnO) thin films. Secondly, it focuses on the field effect properties of solution processable ZnO thin films, which are not only of great interest for current charge-carrier based thin film transistors, but also of fundamental importance in future spin-based transistors. A facile spin-coating technique has been developed to fabricate ZnO thin films. Even without magnetic element doping, the film is found to show room temperature ferromagnetism. A broad series of advanced microscopic and spectroscopic techniques are utilized to characterize the thin films properties. Oxygen vacancy defects are tentatively attributed to the observed ferromagnetism. Following the similar method, Ga doped or Ga, Co co-doped ZnO thin films are prepared. The ferromagnetism is enhanced with Ga doping, providing more carriers. It is discovered that room temperature ferromagnetism can exist in both highly conductive regime and the less conductive or near insulating regime. Transition metal

  13. Tailoring the refractive index of aluminum doped zinc oxide thin films by co-doping with titanium

    NASA Astrophysics Data System (ADS)

    Wei, Tiefeng; Lan, Pinjun; Yang, Ye; Zhang, Xianpeng; Tan, Ruiqin; Li, Yong; Song, Weijie

    2012-12-01

    The refractive index of transparent conductive oxides has a direct effect on the transmission of lights into thin film solar cells. Here we report the study of improving the refractive index of aluminum doped zinc oxide through titanium co-doping. The Al-Ti co-doped zinc oxide (ATZO) thin films with different Ti doping concentration were deposited on glass substrates by radio frequency magnetron sputtering with ATZO targets in an argon atmosphere. The structural, optical and electrical properties of the thin films were investigated using X-ray diffraction, ultraviolet-visible-near-infrared spectroscopy and hall measurements, respectively. The results showed that the as-deposited thin films were all textured along c-axis and perpendicular to the surface of substrate. The average transmittance in the visible region were more than 80% for all the ATZO thin films. The minimum resistivity of the obtained ATZO (1 wt% TiO2 doping) thin films were 2.6 × 10-3 Ω cm and 1.4 × 10-3 Ω cm before and after annealing in vacuum, respectively. The refractive index of the thin films (at λ0 = 550 nm) increased from 1.91 to 2.05 as the TiO2 content increased from 0 wt% to 3 wt%.

  14. Flexible electrochromics: magnetron sputtered tungsten oxide (WO3-x) thin films on Lexan (optically transparent polycarbonate) substrates

    NASA Astrophysics Data System (ADS)

    Uday Kumar, K.; Murali, Dhanya S.; Subrahmanyam, A.

    2015-06-01

    Tungsten oxide (WO3-x) based electrochromics on flexible substrates is a topic of recent interest. The present communication reports the electrochromic properties of WO3-x thin films grown on lexan, an optically transparent polycarbonate thermoplastic substrate. The WO3-x films are prepared at room temperature (300 K) by the reactive DC magnetron sputtering technique. The physical properties of metal oxide thin films are known to be controlled by the oxygen stoichiometry of the film. In the present work, the WO3-x thin films are prepared by varying the oxygen flow rates. All the WO3-x thin films are amorphous in nature. The electrochromic performance of the WO3-x thin films is evaluated by cyclic voltammetry measurements on tin doped indium oxide (ITO) coated lexan and glass substrates. The optical band gap of WO3-x thin films grown on lexan substrates (at any given oxygen flow rate) is significantly higher than those grown on glass substrates. The coloration efficiency of WO3-x thin films (at an oxygen flow rate of 10 sccm) on lexan substrates is: 143.9 cm2 C-1 which is higher compared to that grown on glass: 90.4 cm2 C-1.

  15. Morphology, structural and optical properties of iron oxide thin film photoanodes in photoelectrochemical cell: Effect of electrochemical oxidation

    NASA Astrophysics Data System (ADS)

    Maabong, Kelebogile; Machatine, Augusto G.; Hu, Yelin; Braun, Artur; Nambala, Fred J.; Diale, Mmantsae

    2016-01-01

    Hematite (α-Fe2O3) is a promising semiconductor as photoanode in solar hydrogen production from photoelectrolysis of water due to its appropriate band gap, low cost and high electrochemical stability in aqueous caustic electrolytes. Operation of such photoanode in a biased photoelectrochemical cell constitutes an anodization with consequent redox reactions at the electrode surface. α-Fe2O3 thin film photoanodes were prepared by simple and inexpensive dip coating method on fluorine doped tin oxide (FTO) glass substrate, annealed in air at 500 °C for 2 h, then electrochemically oxidized (anodized) in 1 M KOH at 500 mV for 1 min in dark and light conditions. Changes in structural properties and morphology of α-Fe2O3 nanoparticles films were investigated by XRD, Raman spectroscopy and a high resolution FE-SEM. The average grain size was observed to increase from 57 nm for pristine samples to 73 and 77 nm for anodized samples in dark and light respectively. Broadening and red shift in Raman spectra in anodized samples may be attributed to lattice expansion upon oxidation. The UV-visible measurements revealed enhanced absorption in the photoanodes after the treatment. The findings suggest that the anodization of the photoelectrode in a biased cell causes not only changes of the molecular structure at the surface, but also changes in the crystallographic structure which can be detected with x-ray diffractometry.

  16. A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

    NASA Astrophysics Data System (ADS)

    Adelifard, Mehdi; Darudi, Hosein

    2016-07-01

    There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

  17. Thermal oxidation of amorphous germanium thin films on SiO2 substrates

    NASA Astrophysics Data System (ADS)

    de los Santos Valladares, L.; Bustamante Dominguez, A.; Ionescu, A.; Brown, A.; Sepe, A.; Steiner, U.; Avalos Quispe, O.; Holmes, S.; Majima, Y.; Langford, R.; Barnes, C. H. W.

    2016-12-01

    In this work we report the thermal oxidation of amorphous germanium (a-Ge) thin films (140 nm thickness) in air. Following fabrication by conventional thermal evaporation on SiO2 substrates, the samples were annealed in air at different temperatures ranging from 300 to 1000 °C. By means of x-ray diffraction, x-ray reflectivity, synchrotron grazing-incidence wide-angle x-ray scattering and cross-sectional transmission electron microscopy analysis it is found that the a-Ge films abruptly crystallize at 475 °C, while simultaneously increasing the thickness of the oxide (GeO2) in a layer by layer fashion. X-ray photoemission spectroscopy reveals that the oxidation state of the Ge atoms in the GeO2 layer is 4+. However, a reaction at the GeO2/Ge interface occurs between 500 and 550 °C reducing the oxide layer to GeO x (x < 2) and containing Ge2+ and Ge+. The thickness of the oxide layer grows with the annealing temperature following an Arrhenius behavior with an activation energy of 0.82 ± 0.09 eV up to 500 °C. Remarkably, we observed simultaneous enhancement of the oxidation and crystallization of the a-Ge in the temperature interval 450 °C-500 °C, in which the oxidation rate reaches a maximum of around 0.8 nm °C-1 at around 500 °C.

  18. 1/f noise in thin oxide p-channel metal-nitride-oxide-silicon transistors

    NASA Astrophysics Data System (ADS)

    Maes, Herman E.; Usmani, Sabir H.

    1983-04-01

    The 1/f noise behavior of p-channel metal-nitride-oxide-silicon transistors is presented. Devices with different oxide thicknesses, geometries and different technological treatments were used for this study. It is shown that the noise behavior can be well explained quantitatively with the number fluctuation model developed for MOS transistors. The close correlation between the increase of the noise and of the interface state density after different levels of degradation indeed indicates that the exchange of carriers between the channel and the interface traps lies at the origin of the 1/f noise. The observed degradation in MNOS devices is consistent with a diffusion controlled model for the creation of surface traps but is found to be a saturating effect. The predictions of the mobility fluctuation model are not confirmed in our experiments.

  19. Annealing effect on physical properties of evaporated molybdenum oxide thin films for ethanol sensing

    NASA Astrophysics Data System (ADS)

    Touihri, S.; Arfaoui, A.; Tarchouna, Y.; Labidi, A.; Amlouk, M.; Bernede, J. C.

    2017-02-01

    This paper deals with some physical investigations on molybdenum oxide thin films growing on glass substrates by the thermal evaporation method. These films have been subjected to an annealing process under vacuum, air and oxygen at various temperatures 673, 723 and 773 K. First, the physical properties of these layers were analyzed by means of X-ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM) and optical measurements. These techniques have been used to investigate the oxygen index in MoOx properties during the heat treatment. Second, from the reflectance and transmittance optical measurements, it was found that the direct band gap energy value increased from 3.16 to 3.90 eV. Finally, the heat treatments reveal that the oxygen index varies in such molybdenum oxides showing noticeably sensitivity toward ethanol gas.

  20. Low-temperature atomic layer deposition of copper(II) oxide thin films

    SciTech Connect

    Iivonen, Tomi Hämäläinen, Jani; Mattinen, Miika; Popov, Georgi; Leskelä, Markku; Marchand, Benoît; Mizohata, Kenichiro; Kim, Jiyeon; Fischer, Roland A.

    2016-01-15

    Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap){sub 2}] and ozone in a temperature window of 80–140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV‐Vis spectrophotometry, atomic force microscopy, field emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The process was found to produce polycrystalline copper(II) oxide films with a growth rate of 0.2–0.3 Å per cycle. Impurity content in the films was relatively small for a low temperature ALD process.

  1. Influence of oxygen partial pressure on the metastable copper oxide thin films

    NASA Astrophysics Data System (ADS)

    Geçici, Birol; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan; Pat, Suat

    2016-12-01

    Paramelaconite (Cu4O3) is a metastable copper oxide. Metastable copper oxide thin films were deposited on glass substrates by reactive RF magnetron sputtering in argon (Ar) and oxygen (O2) gas mixture atmospheres. Ar/O2 gas ratios in the sputtering ambient were chosen as 1/1 and 1/9. The surface and optical properties were determined by X-ray diffractometer (XRD), atomic force microscope (AFM) and UV-Vis spectrophotometer. The XRD patterns of the samples exhibited single strong diffraction peaks at 35.39∘ and 35.49∘, corresponding to the (202) peak of Cu4O3. The mean thickness values were measured as 100 nm and 80 nm for the films deposited at 1/1 and 1/9 Ar/O2 gas ratios, respectively. The samples showed low transmittance and high absorbance in the high frequency region.

  2. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures.

    SciTech Connect

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-06-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment.

  3. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    SciTech Connect

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-06-10

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behavior, large changes in metal-insulator transition temperatures, or enhanced catalytic activity. Here in this paper, we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment.

  4. Electrochromic properties of vanadium oxide thin films prepared by PSPT: Effect of substrate temperature

    NASA Astrophysics Data System (ADS)

    Patil, C. E.; Jadhav, P. R.; Tarwal, N. L.; Deshmukh, H. P.; Karanjakar, M. M.; Wali, A. A.; Patil, P. S.

    2013-06-01

    Electrochromic vanadium oxide (V2O5) thin films were deposited onto glass and fluorine doped tin oxide (FTO) coated glass substrates from methanolic vanadium chloride solution by pulsed spray pyrolysis technique (PSPT). The films were synthesized at different substrate temperatures ranging from 350°C-450°C with a temperature step of 50°C. The structural, morphological, optical and electrochromic properties of the synthesized films were investigated. The films were polycrystalline with tetragonal crystal structure. Scanning electron microscopy reveals compact morphology at high temperature. All films exhibited cathodic electrochromism in lithium containing electrolyte (0.5 M LiClO4 + Propylene Carbonate). Maximum coloration efficiency (CE) 15.16 cm2C-1, was observed for the films deposited at 350°C.

  5. Origin of fieldlike spin-orbit torques in heavy metal/ferromagnet/oxide thin film heterostructures

    NASA Astrophysics Data System (ADS)

    Ou, Yongxi; Pai, Chi-Feng; Shi, Shengjie; Ralph, D. C.; Buhrman, R. A.

    2016-10-01

    We report measurements of the thickness and temperature (T ) dependencies of current-induced spin-orbit torques, especially the fieldlike (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/oxide (MgO and Hf Ox/MgO ) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect in the HM. For a FM layer sufficiently thin that a substantial portion of this spin current can reach the FM/oxide interface, T-dependent spin scattering there can yield a strong FL torque that is, in some cases, opposite in sign to that exerted at the NM/FM interface.

  6. Thin Oxides as a Cu Diffusion Barrier for NIF Be Ablator Capsules

    DOE PAGES

    Youngblood, Kelly P.; Huang, H.; Xu, H. W.; ...

    2013-03-01

    The NIF point design uses a five-layer capsule to modify the X-ray absorption in order to achieve optimized shock timing. A stepped copper dopant design defines the layer structure. The production of the capsule involves pyrolysis to remove the inner plastic mandrel. Copper atoms diffuse radially and azimuthally throughout the capsule during pyrolysis. This diffusion significantly diminishes the capsule performance during implosion. Thermal and coated oxide barrier layers employed between layers mitigate the diffusion of copper during the mandrel removal process. The copper atoms do not diffuse through this barrier during pyrolysis. A capsule fabrication method that produces a capsulemore » with a thin oxide layer will be discussed.« less

  7. Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors with Laser Spike Annealing

    NASA Astrophysics Data System (ADS)

    Huang, Hang; Hu, Hailong; Zhu, Jingguang; Guo, Tailiang

    2017-07-01

    Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) have been fabricated at low temperature using laser spike annealing (LSA) treatment. Coffee-ring effects during the printing process were eliminated to form uniform IGZO films by simply increasing the concentration of solute in the ink. The impact of LSA on the TFT performance was studied. The field-effect mobility, threshold voltage, and on/off current ratio were greatly influenced by the LSA treatment. With laser scanning at 1 mm/s for 40 times, the 30-nm-thick IGZO TFT baked at 200°C showed mobility of 1.5 cm2/V s, threshold voltage of -8.5 V, and on/off current ratio >106. Our findings demonstrate the feasibility of rapid LSA treatment of low-temperature inkjet-printed oxide semiconductor transistors, being comparable to those obtained by conventional high-temperature annealing.

  8. Characteristics of Thermally Reduced Graphene Oxide Thin Film as DSSC Counter Electrode

    NASA Astrophysics Data System (ADS)

    Yuliasari, F.; Aprilia, A.; Syakir, N.; Safriani, L.; Saragi, T.; Risdiana; Hidayat, S.; Bahtiar, A.; Siregar, R.; Fitrilawati

    2017-05-01

    We report characteristics of reduced graphene oxide (RGO) as a counter electrode for dye-sensitized solar cell (DSSC). The RGO thin films were prepared on FTO (Fluorine-doped Tin Oxide) substrates and followed by a reduction process. The RGO film was used as a counter electrode in a DSSC device, with a structure of FTO/TiO2/ruthenium dye/mosalyte/RGO/FTO. UV-Vis measurements show an increasing absorption spectrum of RGO film after thermal reduction process and the FT-IR spectrum confirms a removal of the oxygen containing groups after thermal reduction process. The efficiency (η) of the DSSC that applied RGO film as a counter electrode is 0.96%.

  9. Thin-film antimony-antimony-oxide enzyme electrode for penicillin determination.

    PubMed

    Flanagan, M T; Carroll, N J

    1986-07-01

    A potentiometric penicillinase electrode is reported in which the base pH transducer is a thin-film antimony-antimony-oxide electrode deposited by vacuum evaporation. Several enzyme immobilization procedures have been examined and a crosslinked protein film found to be the most appropriate to this type of sensor. The use of an adjacent antimony-antimony-oxide track as a pseudoreference electrode was successfully demonstrated. The overall response was shown to be independent of the stirring rate above 100 rpm, but the kinetics of the response were found to depend markedly on the stirring rate. The intrinsic linear response range was 3 x 10(-4)M to 7 x 10(-3)M penicillin G. Linearizing transforms that extend the useful range were examined.

  10. Drop-photochemical deposition of aluminum oxide thin films from aqueous solutions

    NASA Astrophysics Data System (ADS)

    Sato, Shunta; Ichimura, Masaya

    2017-04-01

    Aluminum oxide thin films were deposited onto fluorine-doped tin oxide-coated glass by drop photochemical deposition for the first time. The deposition solution was deionized water containing aluminum sulfate and sodium thiosulfate. Small amount of the solution was dropped on the substrate and irradiated with UV light. The solution was replaced with new one after 5 min irradiation, and the process was repeated 10 times. A film was not deposited without thiosulfate ions in the solution. The deposited films were transparent, and their band gap was larger than 4 eV. The O/Al composition ratio was about 1.2, smaller than the stoichiometric ratio 1.5.

  11. Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films

    NASA Astrophysics Data System (ADS)

    Wang, R. X.; Beling, C. D.; Fung, S.; Djurišić, A. B.; Ling, C. C.; Li, S.

    2005-02-01

    The influence of postannealing in different gaseous environments on the optical properties of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation has been systematically investigated. It is found that the annealing conditions affect the optical and electrical properties of the films. Atomic force microscopy, x-ray diffraction, and x-ray photoemission spectroscopy (XPS) were employed to obtain information on the chemical state and crystallization of the films. These data suggest that the chemical states and surface morphology of the ITO film are strongly influenced by the gaseous environment during the annealing process. The XPS data indicate that the observed variations in the optical transmittance can be explained by oxygen incorporation into the film, decomposition of the indium oxide phases, as well as the removal of metallic In.

  12. Self-heating induced instability of oxide thin film transistors under dynamic stress

    NASA Astrophysics Data System (ADS)

    Kise, Kahori; Fujii, Mami N.; Urakawa, Satoshi; Yamazaki, Haruka; Kawashima, Emi; Tomai, Shigekazu; Yano, Koki; Wang, Dapeng; Furuta, Mamoru; Ishikawa, Yasuaki; Uraoka, Yukiharu

    2016-01-01

    Degradation caused by Joule heating of transparent amorphous oxide semiconductor thin-film transistors (TFTs) is an important issue for display technology. Deep understanding of the mechanism of self-heating degradation generated by driving pulse voltage will pave the way for the development of highly reliable flexible displays. In this work, by using a pseudo interval measurement method, we examined the relationship of the highest and the lowest heating temperature in pulse 1 cycle and frequency. These self-heating converged to a constant temperature under pulse voltage applied at 1 kHz. Moreover, the long-term reliability under positive-bias stress voltage at 1 kHz of low converged temperature condition was improved relative to that of the stress voltage at 10 Hz of dynamic temperature change condition. We discussed the degradation mechanism of oxide TFTs generated by pulse voltage, and clarified that the degradation was accelerated by thermionic emission which occurred at low frequency.

  13. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    DOE PAGES

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; ...

    2016-06-10

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behavior, large changes in metal-insulator transition temperatures, or enhanced catalytic activity. Here in this paper, we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) dopingmore » of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment.« less

  14. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures.

    PubMed

    Veal, Boyd W; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M; Eastman, Jeffrey A

    2016-06-10

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment.

  15. Preparation and characteristics of vanadium oxide thin films by controlling the sputtering voltage

    NASA Astrophysics Data System (ADS)

    Wei, Xiongbang; Li, Shibin; Gou, Jun; Dong, Xiang; Yang, Xiaohui; Li, Weizhi; Wang, Tao; Wu, Zhiming; Jiang, Yadong; Chen, Zhi

    2014-06-01

    Influence of sputtering voltage on the deposition process and characteristics of vanadium oxide thin films prepared by reactive DC magnetron sputtering is investigated. The target surface cleaning is controlled by adjusting the sputtering voltage. During the sputtering process, the sputtering voltage increases faster with larger O2 gas flow rate. The sputtering voltage is easy to be stable with larger sputtering voltage. The measured sputtering voltage is correlated to the ion induced secondary electron emission (ISEE) coefficient of the target material. The ISEE coefficient of the oxidized vanadium target surface is lower than the ISEE coefficient of the vanadium metal. The semiconductor to metal (S-M) phase transition temperature decreases with the sputtering voltage, leading to the lower the corresponding temperature of the maximum temperature coefficient of resistance (TCR). By this way, O/V ratio, R, and TCR of VOx films can be controlled by adjusting the sputtering voltage.

  16. Hafnium oxide thin films studied by time differential perturbed angular correlations

    NASA Astrophysics Data System (ADS)

    Dey, C. C.; Dey, S.; Bedi, S. C.; Das, S. K.; Lorenz, M.; Grundmann, M.; Vogt, J.; Butz, T.

    2011-06-01

    We report on the study of hafnium oxide thin films grown by pulsed laser deposition at various partial oxygen pressures by Time Differential Perturbed Angular Correlations using the nuclear probe 181Hf(β-)181Ta to determine the nuclear quadrupole interaction (NQI), and by x-ray diffraction. The samples were neutron activated and measured at room temperature as received as well as after annealing in air. All spectra exhibited two to three inequivalent probe sites, even after annealing. At 0.3 mbar oxygen partial pressure and annealing for 5 hs at 1073 K the majority (88%) of the sites exhibited NQI parameters as reported for the bulk monoclinic phase [ωQ = 125.4(2) Mrad/s, η = 0.335(5)]. We can exclude amorphous as well as cubic and tetragonal hafnium oxide phases in the annealed samples. There was no indication of room-temperature ferromagnetism.

  17. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    PubMed Central

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-01-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment. PMID:27283250

  18. Bismuth Oxide Thin Films Deposited on Silicon Through Pulsed Laser Ablation, for Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Condurache-Bota, Simona; Constantinescu, Catalin; Tigau, Nicolae; Praisler, Mirela

    2016-12-01

    Infrared detectors are used in many human activities, from industry to military, telecommunications, environmental studies and even medicine. Bismuth oxide thin films have proved their potential for optoelectronic applications, but their uses as infrared sensors have not been thoroughly studied so far. In this paper, pulsed laser ablation of pure bismuth targets within a controlled oxygen atmosphere is proposed for the deposition of bismuth oxide films on Si (100) substrates. Crystalline films were obtained, whose uniformity depends on the deposition conditions (number of laser pulses and the use of a radio-frequency (RF) discharge of the oxygen inside the deposition chamber). The optical analysis proved that the refractive index of the films is higher than 3 and that their optical bandgap is around 1eV, recommending them for infrared applications.

  19. Graphene oxide, reduced graphene oxide and composite thin films NO2 sensing properties

    NASA Astrophysics Data System (ADS)

    Dunst, Katarzyna J.; Scheibe, Błażej; Nowaczyk, Grzegorz; Jurga, Stefan; Jasiński, Piotr

    2017-05-01

    A graphene oxide (GO), reduced graphene oxide (RGO) and poly(3,4-ethylenedioxytiophene)-reduced graphene oxide (PEDOT-RGO composite) gas sensors were successfully fabricated using an electrodeposition method. The electrodeposition was carried out in aqueous GO dispersions. In order to obtain RGO and PEDOT-RGO, the electrochemical reduction of GO and PEDOT-GO was carried out in 0.1 M KCl at constant potential of  -0.85 V. The GO, RGO and PEDOT-RGO composites were characterized by scanning and high resolution transmission electron microscopies with electron energy loss spectroscopy, Fourier-transform infrared and Raman spectroscopies. In this work the effect of GO electrochemical reduction process was discussed. The effects of the humidity and sensing response of GO, RGO and PEDOT-RGO to different gases were investigated. It was found out the PEDOT-RGO response to NO2 was much higher than to the other analyzed gases. The influence of the operating temperature on the gas sensing response was compared. The role of the polymer and RGO in PEDOT-RGO composite has been indicated. The results are discussed in light of recent literature on graphene sensors.

  20. Thin film passivation of laser generated 3D micro patterns in lithium manganese oxide cathodes

    NASA Astrophysics Data System (ADS)

    Pröll, J.; Kohler, R.; Bruns, M.; Oberst, V.; Weidler, P. G.; Heißler, S.; Kübel, C.; Scherer, T.; Prang, R.; Seifert, H. J.; Pfleging, W.

    2013-03-01

    The increasing need for long-life lithium-ion batteries requires the further development of electrode materials. Especially on the cathode side new materials or material composites are needed to increase the cycle lifetime. On the one hand, spinel-type lithium manganese oxide is a promising candidate to be used as cathode material due to its non-toxicity, low cost and good thermal stability. On the other hand, the spinel structure suffers from change in the oxidation state of manganese during cycling which is also accompanied by loss of active material into the liquid electrolyte. The general trend is to enhance the active surface area of the cathode in order to increase lithium-ion mobility through the electrode/electrolyte interface, while an enhanced surface area will also promote chemical degradation. In this work, laser microstructuring of lithium manganese oxide thin films was applied in a first step to increase the active surface area. This was done by using 248 nm excimer laser radiation and chromium/quartz mask imaging techniques. In a second step, high power diode laser-annealing operating at a wavelength of 940 nm was used for forming a cubic spinel-like battery phase. This was verified by means of Raman spectroscopy and cyclic voltammetric measurements. In a last step, the laser patterned thin films were coated with indium tin oxide (ITO) layers with a thickness of 10 nm to 50 nm. The influence of the 3D surface topography as well as the ITO thickness on the electrochemical performance was studied by cyclic voltammetry. Post-mortem studies were carried out by using scanning electron microscopy and focused ion beam analysis.

  1. Gold supported on thin oxide films: from single atoms to nanoparticles.

    PubMed

    Risse, Thomas; Shaikhutdinov, Shamil; Nilius, Niklas; Sterrer, Martin; Freund, Hans-Joachim

    2008-08-01

    [Figure: see text]. Historically, people have prized gold for its beauty and the durability that resulted from its chemical inertness. However, even the ancient Romans had noted that finely dispersed gold can give rise to particular optical phenomena. A decade ago, researchers found that highly dispersed gold supported on oxides exhibits high chemical activity in a number of reactions. These chemical and optical properties have recently prompted considerable interest in applications of nanodispersed gold. Despite their broad use, a microscopic understanding of these gold-metal oxide systems lags behind their application. Numerous studies are currently underway to understand why supported nanometer-sized gold particles show catalytic activity and to explore possible applications of their optical properties in photonics and biology. This Account focuses on a microscopic understanding of the gold-substrate interaction and its impact on the properties of the adsorbed gold. Our strategy uses model systems in which gold atoms and clusters are supported on well-ordered thin oxide films grown on metal single crystals. As a result, we can investigate the systems with the rigor of modern surface science techniques while incorporating some of the complexity found in technological applications. We use a variety of different experimental methods, namely, scanning probe techniques (scanning tunneling microscopy and spectroscopy, STM and STS), as well as infrared (IR), temperature-programmed desorption (TPD), and electron paramagnetic resonance (EPR) spectroscopy, to evaluate these interactions and combine these results with theoretical calculations. We examined the properties of supported gold with increasing complexity starting from single gold atoms to one- and two-dimensional clusters and three-dimensional particles. These investigations show that the binding of gold on oxide surfaces depends on the properties of the oxide, which leads to different electronic properties of

  2. Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

    SciTech Connect

    Lo, Fang-Yuh Ting, Yi-Chieh; Chou, Kai-Chieh; Hsieh, Tsung-Chun; Ye, Cin-Wei; Hsu, Yung-Yuan; Liu, Hsiang-Lin; Chern, Ming-Yau

    2015-06-07

    Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

  3. Work function recovery of air exposed molybdenum oxide thin films with vacuum annealing

    NASA Astrophysics Data System (ADS)

    Irfan, Irfan; Turniske, Alexander; Bao, Zhenan; Gao, Yongli

    2012-02-01

    We report substantial work function (WF) recovery of air exposed molybdenum oxide thin films with vacuum annealing. The high WF (˜6.8 eV) of thermally evaporated MoOx thin film was observed to decrease sharply to ˜5.6 eV with an air exposure of one hour. The drop in the WF was accompanied with a very thin layer of oxygen rich adsorbate on the MoOx film. The WF of the exposed MoOx film started to gradually recover with increasing annealing temperature in a vacuum chamber having base pressure of 8 x 10-11 torr. The saturation in the WF recovery was observed around 460 ^oC, with WF ˜6.4 eV. The adsorb layer was found to be removed after the vacuum annealing. We further studied the interface formation between the annealed MoOx and copper pthalocynine (CuPc). The highest occupied molecular orbital (HOMO) level of CuPc was observed to be almost pinned to the Fermi level, strongly suggesting an efficient hole injection through the vacuum annealed MoOx film.

  4. Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Lo, Fang-Yuh; Ting, Yi-Chieh; Chou, Kai-Chieh; Hsieh, Tsung-Chun; Ye, Cin-Wei; Hsu, Yung-Yuan; Chern, Ming-Yau; Liu, Hsiang-Lin

    2015-06-01

    Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

  5. Laser scribing of indium tin oxide (ITO) thin films deposited on various substrates for touch panels

    NASA Astrophysics Data System (ADS)

    Tseng, Shih-Feng; Hsiao, Wen-Tse; Huang, Kuo-Cheng; Chiang, Donyau; Chen, Ming-Fei; Chou, Chang-Pin

    2010-12-01

    In this study, a Nd:YAG laser with wavelength of 1064 nm is used to scribe the indium tin oxide (ITO) thin films coated on three types of substrate materials, i.e. soda-lime glass, polycarbonate (PC), and cyclic-olefin-copolymer (COC) materials with thickness of 20 nm, 30 nm, and 20 nm, respectively. The effect of exposure time adjusted from 10 μs to 100 μs on the ablated mark width, depth, and electrical properties of the scribed film was investigated. The maximum laser power of 2.2 W was used to scribe these thin films. In addition, the surface morphology, surface reaction, surface roughness, optical properties, and electrical conductivity properties were measured by a scanning electron microscope, a three-dimensional confocal laser scanning microscope, an atomic force microscope, and a four-point probe. The measured results of surface morphology show that the residual ITO layer was produced on the scribed path with the laser exposure time at 10 μs and 20 μs. The better edge qualities of the scribed lines can be obtained when the exposure time extends from 30 μs to 60 μs. When the laser exposure time is longer than 60 μs, the partially burned areas of the scribed thin films on PC and COC substrates are observed. Moreover, the isolated line width and resistivity values increase when the laser exposure time increases.

  6. Self-assembly of a thin highly reduced graphene oxide film and its high electrocatalytic activity

    NASA Astrophysics Data System (ADS)

    Bai, Yan-Feng; Zhang, Yong-Fang; Zhou, An-Wei; Li, Hai-Wai; Zhang, Yu; Luong, John H. T.; Cui, Hui-Fang

    2014-10-01

    A thin highly reduced graphene oxide (rGO) film was self-assembled at the dimethyl formamide (DMF)-air interface through evaporation-induced water-assisted thin film formation at the pentane-DMF interface, followed by complete evaporation of pentane. The thin film was transferred onto various solid substrates for film characterization and electrochemical sensing. UV-visible spectrometry, scanning electron microscopy (SEM), atomic force microscopy (AFM) and electrochemistry techniques were used to characterize the film. An rGO film showing 82.8% of the transmittance at 550 nm corresponds to a few layers of rGO nanosheets. The rGO nanosheets cross-stack with each other, lying approximately in the plane of the film. An rGO film collected on a glassy carbon (GC) electrode exhibited improved electrical conductivity compared to GC, with the electrode charge-transfer resistance (Rct) reduced from 31 Ω to 22 Ω. The as-formed rGO/GC electrode was mechanically very stable, exhibiting significantly enhanced electrocatalytic activity to H2O2 and dopamine. Multiple layers of the rGO films on the GC electrode showed even stronger electrocatalytic activity to dopamine than that of the single rGO film layer. The controllable formation of a stable rGO film on various solid substrates has potential applications for nanoelectronics and sensors/biosensors.

  7. Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

    NASA Astrophysics Data System (ADS)

    Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

    2016-12-01

    In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O2/Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (Ioff) of 3 pA, a high on/off current ratio of 2 × 107, a high saturation mobility (μsat) of 66.7 cm2/V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (Vth) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays.

  8. Fast light-induced reversible wettability of zinc oxide nanorod array coated with gold thin layer.

    PubMed

    Wei, Yuefan; Du, Hejun; Kong, Junhua; Tran, Van Thai; Koh, Jia Kai; Zhao, Chenyang; He, Chaobin

    2017-08-11

    Zinc oxide (ZnO) has gained much attention nowadays due to its excellent physical and chemical properties, and been extensively studied in energy harvesting applications, such as photovoltaic and piezoelectric devices. In recent years, its reversible wettability has also been attracting increasing interests. The wettability of ZnO nanostructures with various morphologies was studied. However, to our best knowledge, there is still a lack of investigations on further modifications on ZnO to provide more benefits outweighed to pristine ZnO. Comprehensive studies on their reversible wettability are still needed. In this study, ZnO nanorod array was prepared via a hydrothermal process and subsequently coated with thin gold layers with varied thickness. The morphologies and structures, optical properties and wettability were investigated. It is revealed that the ZnO-Au system possesses recoverable wettability upon switching between visible-ultraviolet (UV) light and dark environment, which is verified by the contact angle change. The introduction of the gold thin layer to ZnO nanorod array effectively increases the recovery rate of the wettability. The improvements are attributed to the hierarchical structures, which are formed by depositing gold thin layers onto ZnO nanorod array, the visible light sensitivity due to the plasmonic effect of deposited gold, as well as the fast charges-induced surface status change upon light illumination or dark storage. The improvement is beneficial to applications in environmental purification, energy harvesting, micro-lenses, and smart devices. © 2017 IOP Publishing Ltd.

  9. Tandem organic light-emitting diode with a molybdenum tri-oxide thin film interconnector layer

    NASA Astrophysics Data System (ADS)

    Lu, Fei-Ping; Wang, Qian; Zhou, Xiang

    2013-03-01

    A 10-nm-thick molybdenum tri-oxide (MoO3) thin film was used as the interconnector layer in tandem organic light-emitting devices (OLEDs). The tandem OLEDs with two identical emissive units consisting of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB)/tris(8-hydroxyquinoline) aluminum (Alq3) exhibited current efficiency-current density characteristics superior to the conventional single-unit devices. At 20 mA/cm2, the current efficiency of the tandem OLEDs using the interconnector layers of MoO3 thin film was about 4.0 cd/A, which is about twice that of the corresponding conventional single-unit device (1.8 cd/A). The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200 cd/m2. The experimental results demonstrated that a MoO3 thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs. Such an interconnector layer can be easily fabricated by simple thermal evaporation, greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers. A possible explanation was proposed for the carrier generation of the MoO3 interconnector layer.

  10. Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate.

    PubMed

    Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

    2016-12-12

    In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O2/Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (Ioff) of 3 pA, a high on/off current ratio of 2 × 10(7), a high saturation mobility (μsat) of 66.7 cm(2)/V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (Vth) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays.

  11. Analysis of indium zinc oxide thin films by laser-induced breakdown spectroscopy

    SciTech Connect

    Popescu, A. C.; Beldjilali, S.; Socol, G.; Mihailescu, I. N.; Craciun, V.; Hermann, J.

    2011-10-15

    We have performed spectroscopic analysis of the plasma generated by Nd:YAG ({lambda} = 266 nm) laser irradiation of thin indium zinc oxide films with variable In content deposited by combinatorial pulsed laser deposition on glass substrates. The samples were irradiated in 5 x 10{sup 4} Pa argon using laser pulses of 5 ns duration and 10 mJ energy. The plasma emission spectra were recorded with an Echelle spectrometer coupled to a gated detector with different delays with respect to the laser pulse. The relative concentrations of indium and zinc were evaluated by comparing the measured spectra to the spectral radiance computed for a plasma in local thermal equilibrium. Plasma temperature and electron density were deduced from the relative intensities and Stark broadening of spectral lines of atomic zinc. Analyses at different locations on the deposited thin films revealed that the In/(In + Zn) concentration ratio significantly varies over the sample surface, from 0.4 at the borders to about 0.5 in the center of the film. The results demonstrate that laser-induced breakdown spectroscopy allows for precise and fast characterization of thin films with variable composition.

  12. Self-assembly of a thin highly reduced graphene oxide film and its high electrocatalytic activity.

    PubMed

    Bai, Yan-Feng; Zhang, Yong-Fang; Zhou, An-Wei; Li, Hai-Wai; Zhang, Yu; Luong, John H T; Cui, Hui-Fang

    2014-10-10

    A thin highly reduced graphene oxide (rGO) film was self-assembled at the dimethyl formamide (DMF)-air interface through evaporation-induced water-assisted thin film formation at the pentane-DMF interface, followed by complete evaporation of pentane. The thin film was transferred onto various solid substrates for film characterization and electrochemical sensing. UV-visible spectrometry, scanning electron microscopy (SEM), atomic force microscopy (AFM) and electrochemistry techniques were used to characterize the film. An rGO film showing 82.8% of the transmittance at 550 nm corresponds to a few layers of rGO nanosheets. The rGO nanosheets cross-stack with each other, lying approximately in the plane of the film. An rGO film collected on a glassy carbon (GC) electrode exhibited improved electrical conductivity compared to GC, with the electrode charge-transfer resistance (Rct) reduced from 31 Ω to 22 Ω. The as-formed rGO/GC electrode was mechanically very stable, exhibiting significantly enhanced electrocatalytic activity to H(2)O(2) and dopamine. Multiple layers of the rGO films on the GC electrode showed even stronger electrocatalytic activity to dopamine than that of the single rGO film layer. The controllable formation of a stable rGO film on various solid substrates has potential applications for nanoelectronics and sensors/biosensors.

  13. Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

    PubMed Central

    Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

    2016-01-01

    In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O2/Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (Ioff) of 3 pA, a high on/off current ratio of 2 × 107, a high saturation mobility (μsat) of 66.7 cm2/V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (Vth) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays. PMID:27941915

  14. Sensitivity and Response of Polyvinyl Alcohol/Tin Oxide Nanocomposite Multilayer Thin Film Sensors.

    PubMed

    Sriram, G; Dhineshbabu, N R; Nithyavathy, N; Saminathan, K; Kaler, K V I S; Rajendran, V

    2016-01-01

    Nanocrystalline Tin Oxide (SnO₂) is Non-Stoichiometric in Nature with Functional Properties Suitable for gas sensing. In this study, SnO₂nanoparticles were prepared by the sol-gel technique, which were then characterised using X-ray diffraction. The nanoparticles showed tetragonal structure with an average crystallite size of 18 nm. The stretching and vibration modes of SnO₂were confirmed using Fourier transform infrared spectroscopy. The size of SnO₂ nanoparticles was determined using particle size analyser, which was found be 60 ± 10 nm on average. The surface morphology of the nanoparticles was investigated using scanning electron microscope, which showed irregular-sized agglomerated SnO₂nanostructures. In addition, primary particle size was evaluated using high-resolution transmission electron microscopy, which was found to be 50 nm on average. The polyvinyl alcohol/SnO₂ composite thin film was prepared on a glass substrate using spin-coating method. The values of band gap energy and electrical conductance of 13-layer thin film were found to be 2.96 eV and 0.0505 mho, respectively. Sulfur dioxide (SO₂) was suitably tailored to verify the sensor response over a concentration range of 10-70 ppm at room temperature. The performance, response, and recovery time of sensors were increased by increasing the layers of the thin film.

  15. Multi-Walled Carbon Nanotube-Doped Tungsten Oxide Thin Films for Hydrogen Gas Sensing

    PubMed Central

    Wongchoosuk, Chatchawal; Wisitsoraat, Anurat; Phokharatkul, Ditsayut; Tuantranont, Adisorn; Kerdcharoen, Teerakiat

    2010-01-01

    In this work we have fabricated hydrogen gas sensors based on undoped and 1 wt% multi-walled carbon nanotube (MWCNT)-doped tungsten oxide (WO3) thin films by means of the powder mixing and electron beam (E-beam) evaporation technique. Hydrogen sensing properties of the thin films have been investigated at different operating temperatures and gas concentrations ranging from 100 ppm to 50,000 ppm. The results indicate that the MWCNT-doped WO3 thin film exhibits high sensitivity and selectivity to hydrogen. Thus, MWCNT doping based on E-beam co-evaporation was shown to be an effective means of preparing hydrogen gas sensors with enhanced sensing and reduced operating temperatures. Creation of nanochannels and formation of p-n heterojunctions were proposed as the sensing mechanism underlying the enhanced hydrogen sensitivity of this hybridized gas sensor. To our best knowledge, this is the first report on a MWCNT-doped WO3 hydrogen sensor prepared by the E-beam method. PMID:22163623

  16. Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

    SciTech Connect

    Chowdhury, Farzana Aktar; Hossain, Mohammad Abul; Uchida, Koji; Tamura, Takahiro; Sugawa, Kosuke; Mochida, Tomoaki; Otsuki, Joe; Mohiuddin, Tariq; Boby, Monny Akter; Alam, Mohammad Sahabul

    2015-10-15

    This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP) adorned graphene oxide (GO) nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR) radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW{sup −1}. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

  17. Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation

    NASA Astrophysics Data System (ADS)

    Lee, Sunghwan; Paine, David C.

    2013-02-01

    The mechanism of native defect doping in amorphous In-Zn-O (a-IZO) has not previously been established but is likely associated with native oxygen defect doping. We have used high pressure oxidation and defect equilibrium analysis to show a -1/6 power dependence of carrier density on oxygen fugacity in a-IZO. This dependency is predicted for oxygen vacancy-like donor defects. Extrapolation of equilibrium constants established at high pressures to atmospheric pressure reveals that the equilibrium carrier density in a-IZO at 200 °C is higher (>1020/cm3) than typical as-deposited channel carrier densities (<1017/cm3). This is consistent with observed increases in channel carrier density and negative threshold voltage shift in annealed a-IZO thin film transistor devices.

  18. Thermo-electrical properties of composite semiconductor thin films composed of nanocrystalline graphene-vanadium oxides.

    PubMed

    Jung, Hye-Mi; Um, Sukkee

    2014-12-01

    This paper presents an experimental comparative study involving the characterization of the thermo-electrical and structural properties of graphene-based vanadium oxide (graphene-VOx) composite thin films on insulating and conducting surfaces (i.e., fused quartz and acrylic resin-impregnated graphite) produced by a sol-gel process via dipping-pyrolysis. A combination of FE-SEM and XPS analyses revealed that the graphene-VOx composite thin films (coated onto fused quartz) exhibiting the microstructure of 2-graded nanowire arrays with a diameter of 40-80 nm were composed of graphene, a few residual oxygen-containing functional groups (i.e., C-O and C=O), and the VO2 Magnéli phase. The temperature-dependent electrical resistance measured on the as-deposited thin films clearly demonstrated that the graphene-VOx composite nanowire arrays thermally grown on fused quartz act as a semiconductor switch, with a transition temperature of 64.7 degrees C in the temperature range of -20 degrees C to 140 degrees C, resulting from the contributions of graphene and graphene oxides. In contrast, the graphene-VOx composite thin films deposited onto acrylic resin-impregnated graphite exhibit a superlinear semiconducting property of extremely low electrical resistance with negative temperature coefficients (i.e., approximately four orders of magnitude lower than that of the fused quartz), despite the similar microstructural and morphological characteristics. This difference is attributed to the synergistic effects of the paramagnetic metal feature of the tightly stacked nanowire arrays consisting of hexagonal V2O3 on the intrinsic electrical properties of the acrylic resin-impregnated graphite substrate, as revealed by FE-SEM, EDX, AFM, and XRD measurements. Although the thermo-sensitive electrical properties of the graphene-VOx composite thin films are very substrate specific, the applicability of graphene sheets can be considerably effective in the formation of highly planar arrays

  19. Comment on "Tunable Design of Structural Colors Produced by Pseudo-1D Photonic Crystals of Graphene Oxide" and Thin-Film Interference from Dried Graphene Oxide Film.

    PubMed

    Hong, Seung-Ho; Song, Jang-Kun

    2017-04-01

    The mechanism of the iridescent color reflection from dried thin graphene oxide (GO) film on Si wafer is clarified. Dissimilarly to the photonic crystalline reflection in aqueous GO dispersion, the color reflection in dried GO film originates from the thin film interference. The peak reflection can reach 23% by optimizing the GO thickness and the substrate. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Hydrogenated aluminium-doped zinc oxide semiconductor thin films for polymeric light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Hao, X. T.; Zhu, F. R.; Ong, K. S.; Tan, L. W.

    2006-01-01

    Highly conducting transparent thin films of aluminium(Al)-doped zinc oxide (ZnO:Al) were deposited by a radio frequency magnetron-sputtering technique using an argon and hydrogen gas mixture at room temperature. Hydrogen serves as a shallow donor and plays a critical role in improving the Al doping efficiency to enhance the conductivity of thin films. The effect of hydrogen partial pressure on the properties of ZnO:Al films was investigated in detail. Polycrystalline ZnO:Al films with a surface roughness of about 2 nm, conductivity of 1.97 × 103 S cm-1, transmittance of over 83% in the visible wavelength region and an optical band gap of 3.93 eV were achieved at a hydrogen partial pressure of 7.5 × 10-4 Pa. A ZnO:Al film with the desired properties was used as an anode contact in a bi-layer polymeric light-emitting diode. A polyethylene dioxythiophene-polystyrene sulfonate doped with poly(styrenesulfonic acid) (PEDOT: PSS) and phenyl-substituted poly(p-phenylene vinylene) (Ph-PPV) were employed as a hole transport layer and a light-emitting layer, respectively. The electro-luminescence performance of the aforementioned diode was studied and compared to a control device with an indium tin oxide anode.

  1. Modulation of physical properties of oxide thin films by multiple fields

    NASA Astrophysics Data System (ADS)

    Hua-Li, Yang; Bao-Min, Wang; Xiao-Jian, Zhu; Jie, Shang; Bin, Chen; Run-Wei, Li

    2016-06-01

    Recent studies of the modulation of physical properties in oxide thin films by multiple fields are reviewed. Some of the key issues and prospects of this area of study are also addressed. Oxide thin films exhibit versatile physical properties such as magnetism, ferroelectricity, piezoelectricity, metal-insulator transition (MIT), multiferroicity, colossal magnetoresistivity, switchable resistivity. More importantly, the exhibited multifunctionality can be tuned by various external fields, which has enabled demonstration of novel electronic devices. Project supported by the State Key Project of Fundamental Research of China (Grant No. 2012CB933004), the National Natural Science Foundation of China (Grant Nos. 11474295, 51571208, 51525103, and 11274322), Overseas, Hong Kong & Macao Scholars Collaborated Researching Fund (Grant No. 51428201), the Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YZ201327), Ningbo Major Project for Science and Technology (Grant No. 2014B11011), Ningbo International Cooperation Projects (Grant Nos. 2012D10018 and 2014D10005), the Fund for Ningbo Science and Technology Innovation Team (Grant No. 2015B11001), the Youth Innovation Promotion Association of the Chinese Academy of Sciences, and the Key Research Program of the Chinese Academy of Sciences (Grant No. KJZD-EW-M05).

  2. Perovskite-type oxide thin film integrated fiber optic sensor for high-temperature hydrogen measurement.

    PubMed

    Tang, Xiling; Remmel, Kurtis; Lan, Xinwei; Deng, Jiangdong; Xiao, Hai; Dong, Junhang

    2009-09-15

    Small size fiber optic devices integrated with chemically sensitive photonic materials are emerging as a new class of high-performance optical chemical sensor that have the potential to meet many analytical challenges in future clean energy systems and environmental management. Here, we report the integration of a proton conducting perovskite oxide thin film with a long-period fiber grating (LPFG) device for high-temperature in situ measurement of bulk hydrogen in fossil- and biomass-derived syngas. The perovskite-type Sr(Ce(0.8)Zr(0.1))Y(0.1)O(2.95) (SCZY) nanocrystalline thin film is coated on the 125 microm diameter LPFG by a facile polymeric precursor route. This fiber optic sensor (FOS) operates by monitoring the LPFG resonant wavelength (lambda(R)), which is a function of the refractive index of the perovskite oxide overcoat. At high temperature, the types and population of the ionic and electronic defects in the SCZY structure depend on the surrounding hydrogen partial pressure. Thus, varying the H(2) concentration changes the SCZY film refractive index and light absorbing characteristics that in turn shifts the lambda(R) of the LPFG. The SCZY-coated LPFG sensor has been demonstrated for bulk hydrogen measurement at 500 degrees C for its sensitivity, stability/reversibility, and H(2)-selectivity over other relevant small gases including CO, CH(4), CO(2), H(2)O, and H(2)S, etc.

  3. Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

    PubMed Central

    Dral, A. Petra; Dubbink, David; Nijland, Maarten; ten Elshof, Johan E.; Rijnders, Guus; Koster, Gertjan

    2014-01-01

    Atomically defined substrate surfaces are prerequisite for the epitaxial growth of complex oxide thin films. In this protocol, two approaches to obtain such surfaces are described. The first approach is the preparation of single terminated perovskite SrTiO3 (001) and DyScO3 (110) substrates. Wet etching was used to selectively remove one of the two possible surface terminations, while an annealing step was used to increase the smoothness of the surface. The resulting single terminated surfaces allow for the heteroepitaxial growth of perovskite oxide thin films with high crystalline quality and well-defined interfaces between substrate and film. In the second approach, seed layers for epitaxial film growth on arbitrary substrates were created by Langmuir-Blodgett (LB) deposition of nanosheets. As model system Ca2Nb3O10- nanosheets were used, prepared by delamination of their layered parent compound HCa2Nb3O10. A key advantage of creating seed layers with nanosheets is that relatively expensive and size-limited single crystalline substrates can be replaced by virtually any substrate material. PMID:25549000

  4. Growth of different phases of yttrium manganese oxide thin films by pulsed laser deposition

    SciTech Connect

    Kumar, Manish; Choudhary, R. J.; Phase, D. M.

    2012-06-05

    Various phases of yttrium manganese oxide (YMO) thin films have been synthesized on different substrates from a single target of h-YMnO{sub 3}. It is observed that the phase stability and crystallinity of YMO thin films depend on the substrate used and oxygen partial pressure (OPP). (110) oriented and polycrystalline growth of h-YMnO{sub 3} are observed on the Al{sub 2}O{sub 3} (0001) and NGO (110) substrates respectively, when grown in OPP {approx_equal} 10{sup -6} Torr. While for similar OPP value, growth of mixed phases (h-YMnO{sub 3} and o-YMn{sub 2}O{sub 5}) is observed on Si (001) substrate. Oriented growth of O-YMn{sub 2}O{sub 5} phase film on Si (001) substrate is observed first time, when deposited at OPP value of 225 and 350 mTorr. +3 and mixed oxidation states (+3 and +4) of Mn were confirmed by x-ray photoelectron spectroscopy in pure YMnO{sub 3} phase and YMn{sub 2}O{sub 5} phase respectively.

  5. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films.

    PubMed

    Leng, X; Bollinger, A T; Božović, I

    2016-08-10

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.

  6. Electrical characterization of reduced graphene oxide (rGO) on organic thin film transistor (OTFT)

    NASA Astrophysics Data System (ADS)

    Musa, Nurhazwani; Halim, Nurul Farhanah Ab.; Ahmad, Mohd Noor; Zakaria, Zulkhairi; Hashim, Uda

    2017-03-01

    A green method and eco-friendly solution were used to chemically reduce graphene oxide (GO) to graphene using green reductant. In this study, graphene oxide (GO) were prepared by using Tours method. Then, reduced graphene oxides (rGO) were prepared by using three typical reduction agents: L-ascorbic acid (L-AA), formamidinesulfinic acid (FAS) and sodium sulfite (Na2SO3). The reduced materials were characterized by Fourier transform infrared spectroscopy (FTIR), Thermo gravimetric analysis (TGA) and X-ray diffraction (XRD). Graphene based organic thin film transistor (G-OTFT) was prepared by a spin coating and thermal evaporation technique. The electrical characterization of G-OTFT was analyzed by using semiconductor parameter analyzer (SPA). The G-OTFT devices show p-type semiconducting behaviour. This article focuses on the synthesis and reduction of graphene oxide using three different reductants in order to maximise its electrical conductivity. The rGO product demonstrated a good electrical conductivity performance with highly sensitivity sensor.

  7. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    SciTech Connect

    Leng, X.; Bozovic, I.; Bollinger, A. T.

    2016-08-10

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.

  8. Deposition of oxide thin films on silicon using organic self-assembled monolayers

    NASA Astrophysics Data System (ADS)

    DeGuire, Mark R.; Shin, Hyunjung; Collins, R. J.; Agarwal, Monika; Sukenik, Chaim N.; Heuer, Arthur H.

    1996-03-01

    Crystalline oxide thin films have been synthesized at low temperatures from aqueous liquid solutions. A key element of the approach is the use of organic self-assembled monolayers (SAMs) on the substrate to promote the growth of adherent inorganic films. A SAM is a close- packed, highly ordered array of long-chain hydrocarbon molecules, anchored to the substrate by covalent bonds. The terminating functional group on the SAM surface is chosen so as to initiate and help sustain the formation of the oxide film when the substrate is immersed in the oxide precursor solution. Synthesis, microstructural characterization, and properties of TiO2, ZrO2, SiO2, and Y2O3 films are surveyed. Crystalline films were formed either directly from solution, or through subsequent heat treatments at temperatures that in most cases were lower than typical sol-gel or vapor phase deposition processes. All depositions were from aqueous solutions onto single-crystal (100) silicon. The ability to produce patterned films on a micron scale has been demonstrated, taking advantage of the selective deposition characteristics towards different surface functional groups of the SAM. The role of the SAM in oxide film formation is discussed.

  9. Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

    SciTech Connect

    Nash, C. R.; Fenton, J. C.; Constantino, N. G. N.; Warburton, P. A.

    2014-12-14

    We report on the electrical characterisation of a series of thin amorphous chromium oxide (CrO{sub x}) films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the CrO{sub x} films was varied from 28 Ω/◻ to 32.6 kΩ/◻. The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/◻ to above 20 GΩ/◻. All of the films measured displayed linear current–voltage characteristics at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium–silicon nanowires, interfaces between niobium–silicon and chromium oxide are required. We also characterised the contact resistance for one CrO{sub x} composition at an interface with niobium–silicon. We found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.14 mΩcm{sup 2}, much lower than the value for direct CrO{sub x} to niobium–silicon contact. We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.

  10. Oxidation behavior of arc evaporated Al-Cr-Si-N thin films

    SciTech Connect

    Tritremmel, Christian; Daniel, Rostislav; Mitterer, Christian; Mayrhofer, Paul H.; Lechthaler, Markus; Polcik, Peter

    2012-11-15

    The impact of Al and Si on the oxidation behavior of Al-Cr-(Si)-N thin films synthesized by arc evaporation of powder metallurgically prepared Al{sub x}Cr{sub 1-x} targets with x = Al/(Al + Cr) of 0.5, 0.6, and 0.7 and (Al{sub 0.5}Cr{sub 0.5}){sub 1-z}Si{sub z} targets with Si contents of z = 0.05, 0.1, and 0.2 in N{sub 2} atmosphere was studied in detail by means of differential scanning calorimetry, thermogravimetric analysis (TGA), x-ray diffraction, and Raman spectroscopy. Dynamical measurements in synthetic air (up to 1440 Degree-Sign C) revealed the highest onset temperature of pronounced oxidation for nitride coatings prepared from the Al{sub 0.4}Cr{sub 0.4}Si{sub 0.2} target. Isothermal TGA at 1100, 1200, 1250, and 1300 Degree-Sign C highlight the pronounced improvement of the oxidation resistance of Al{sub x}Cr{sub 1-x}N coatings by the addition of Si. The results show that Si promotes the formation of a dense coating morphology as well as a dense oxide scale when exposed to air.

  11. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    DOE PAGES

    Leng, X.; Bozovic, I.; Bollinger, A. T.

    2016-08-10

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a puremore » electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.« less

  12. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    PubMed Central

    Leng, X.; Bollinger, A. T.; Božović, I.

    2016-01-01

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices. PMID:27506371

  13. Sol-gel deposited aluminum-doped and gallium-doped zinc oxide thin-film transparent conductive electrodes with a protective coating of reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2016-04-01

    Using a traditional sol-gel deposition technique, we successfully fabricated aluminum-doped zinc oxide (AZO) and gallium-doped zinc oxide (GZO) thin films on glass substrates. Employing a plasma treatment method as the postannealing process, we produced thin-film transparent conductive electrodes exhibiting excellent optical and electrical properties, with transmittance greater than 90% across the entire visible spectrum and the near-infrared range, as well as good sheet resistance under 200 Ω/sq. More importantly, to improve the resilience of our fabricated thin-film samples at elevated temperatures and in humid environments, we deposited a layer of reduced graphene oxide (rGO) as protective overcoating. The stability of our composite AZO/rGO and GZO/rGO samples improved substantially compared to that of their counterparts with no rGO coating.

  14. Super-high density Si quantum dot thin film utilizing a gradient Si-rich oxide multilayer structure.

    PubMed

    Kuo, Kuang-Yang; Huang, Pin-Ruei; Lee, Po-Tsung

    2013-05-17

    A gradient Si-rich oxide multilayer (GSRO-ML) deposition structure is proposed to achieve super-high density Si quantum dot (QD) thin film formation while preserving QD size controllability for better photovoltaic properties. Our results indicate that the Si QD thin film using a GSRO-ML structure can efficiently increase the QD density and control the QD size. Its optical properties clearly promise the capability of effective bandgap engineering even though these QDs are closely formed. The Si QD thin film using a GSRO-ML structure obviously reveals better electro-optical properties than those using a [silicon dioxide/silicon-rich oxide] multilayer ([SiO2/SRO]-ML) structure owing to the better optical absorption and carrier transport properties. Therefore, we successfully demonstrate that our proposed GSRO-ML structure has great potential for application in solar cells integrating Si QD thin films.

  15. Nano-indentation of single-layer optical oxide thin films grown by electron-beam deposition

    SciTech Connect

    Mehrotra, K.; Oliver, J. B.; Lambropoulos, J. C.

    2015-01-01

    Mechanical characterization of optical oxide thin films is performed using nano-indentation, and the results are explained based on the deposition conditions used. These oxide films are generally deposited to have a porous microstructure that optimizes laser induced damage thresholds, but changes in deposition conditions lead to varying degrees of porosity, density, and possibly the microstructure of the thin film. This can directly explain the differences in the mechanical properties of the film studied here and those reported in literature. Of the four single-layer thin films tested, alumina was observed to demonstrate the highest values of nano-indentation hardness and elastic modulus. This is likely a result of the dense microstructure of the thin film arising from the particular deposition conditions used.

  16. Polyelectrolyte-mediated assembly of copper-phthalocyanine tetrasulfonate multilayers and the subsequent production of nanoparticulate copper oxide thin films.

    PubMed

    Chickneyan, Zarui Sara; Briseno, Alejandro L; Shi, Xiangyang; Han, Shubo; Huang, Jiaxing; Zhou, Feimeng

    2004-07-01

    An approach to producing films of nanometer-sized copper oxide particulates, based on polyelectrolyte-mediated assembly of the precursor, copper(II)phthalocyanine tetrasulfonate (CPTS), is described. Multilayered CPTS and polydiallyldimethylammonium chloride (PDADMAC) were alternately assembled on different planar substrates via the layer-by-layer (LbL) procedure. The growth of CPTS multilayers was monitored by UV-visible spectrometry and quartz crystal microbalance (QCM) measurements. Both the UV-visible spectra and the QCM data showed that a fixed amount of CPTS could be attached to the substrate surface for a given adsorption cycle. Cyclic voltammograms at the CPTS/PDADMAC-covered gold electrode exhibited a decrease in peak currents with the layer number, indicating that the permeability of CPTS multilayers on the electrodes had diminished. When these CPTS multilayered films were calcined at elevated temperatures, uniform thin films composed of nanoparticulate copper oxide could be produced. Ellipsometry showed that the thickness of copper oxide nanoparticulate films could be precisely tailored by varying the thickness of CPTS multilayer films. The morphology and roughness of CPTS multilayer and copper oxide thin films were characterized by atomic force microscopy. X-ray diffraction (XRD) measurements indicated that these thin films contained both CuO and Cu2O nanoparticles. The preparation of such copper oxide thin films with the use of metal complex precursors represents a new route for the synthesis of inorganic oxide films with a controlled thickness.

  17. Thin-film transistors with a channel composed of semiconducting metal oxide nanoparticles deposited from the gas phase

    NASA Astrophysics Data System (ADS)

    Busch, C.; Schierning, G.; Theissmann, R.; Nedic, A.; Kruis, F. E.; Schmechel, R.

    2012-06-01

    The fabrication of semiconducting functional layers using low-temperature processes is of high interest for flexible printable electronics applications. Here, the one-step deposition of semiconducting nanoparticles from the gas phase for an active layer within a thin-film transistor is described. Layers of semiconducting nanoparticles with a particle size between 10 and 25 nm were prepared by the use of a simple aerosol deposition system, excluding potentially unwanted technological procedures like substrate heating or the use of solvents. The nanoparticles were deposited directly onto standard thin-film transistor test devices, using thermally grown silicon oxide as gate dielectric. Proof-of-principle experiments were done deploying two different wide-band gap semiconducting oxides, tin oxide, SnO x , and indium oxide, In2O3. The tin oxide spots prepared from the gas phase were too conducting to be used as channel material in thin-film transistors, most probably due to a high concentration of oxygen defects. Using indium oxide nanoparticles, thin-film transistor devices with significant field effect were obtained. Even though the electron mobility of the investigated devices was only in the range of 10-6 cm2 V-1 s-1, the operability of this method for the fabrication of transistors was demonstrated. With respect to the possibilities to control the particle size and layer morphology in situ during deposition, improvements are expected.

  18. Solution-processed gadolinium doped indium-oxide thin-film transistors with oxide passivation

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Hun; Kim, Taehun; Lee, Jihun; Avis, Christophe; Jang, Jin

    2017-03-01

    We studied the effect of Gd doping on the structural properties of solution processed, crystalline In2O3 for thin-film transistor (TFT) application. With increasing Gd in In2O3 up to 20%, the material structure changes into amorphous phase, and the oxygen vacancy concentration decreases from 15.4 to 8.4%, and M-OH bonds from 33.5 to 23.7%. The field-effect mobility for the Gd doped In2O3 TFTs decreases and threshold voltage shifts to the positive voltage with increasing Gd concentration. In addition, the stability of the solution processed TFTs can also be improved by increasing Gd concentration. As a result, the optimum Gd concentration is found to be ˜5% in In2O3 and the 5% Gd doped In2O3 TFTs with the Y2O3 passivation layer exhibit the linear mobility of 9.74 cm2/V s, the threshold voltage of -0.27 V, the subthreshold swing of 79 mV/dec., and excellent bias stability.

  19. Resistive Switching Characteristics of Tantalum Oxide Thin Film and Titanium Oxide Nanoparticles Hybrid Structure.

    PubMed

    Park, Mi Ra; Abbas, Yawar; Hu, Quanli; Yoon, Tae-Sik; Choi, Young Jin; Kang, Chi Jung

    2015-11-01

    The fabrication of hybrid structure with TiO2 nanoparticle assembly and Ta2O5 thin film layer was demonstrated. The close-packed nanoparticles could influence the resistive switching behaviors due to the huge numbers of interface states and vacancies in the nanoparticle assembly. The device with hybrid structure presented the typical bipolar resistive switching characteristics in the structure of Ti/TiO2/Ta2O5/Au on SiO2/Si substrate. The set voltage was observed at -0.7 V, and the reset voltage occurred at (-)-0.7 V, which was smaller than that of Ta2O5 layer only. The electrical conduction mechanisms were the ohmic conduction at low resistance state (LRS) and the space charge limited conduction at high resistance state (HRS), respectively. The devices showed stable current ratio of LRS to HRS. The temperature dependent properties of the devices were also investigated. The device with nanoparticle assembly showed better electrical characteristics with low HRS current level and stable LRS current level with respect to the temperature.

  20. Oxidatively Electrodeposited Thin-Film Transition Metal (Oxy)hydroxides as Oxygen Evolution Catalysts.

    PubMed

    Morales-Guio, Carlos G; Liardet, Laurent; Hu, Xile

    2016-07-20

    The electrolysis of water to produce hydrogen and oxygen is a simple and attractive approach to store renewable energies in the form of chemical fuels. The oxygen evolution reaction (OER) is a complex four-electron process that constitutes the most energy-inefficient step in water electrolysis. Here we describe a novel electrochemical method for the deposition of a family of thin-film transition metal (oxy)hydroxides as OER catalysts. The thin films have nanodomains of crystallinity with lattice spacing similar to those of double-layered hydroxides. The loadings of these thin-film catalysts were accurately determined with a resolution of below 1 μg cm(-2) using an electrochemical quartz microcrystal balance. The loading-activity relations for various catalysts were established using voltammetry and impedance spectroscopy. The thin-film catalysts have up to four types of loading-activity dependence due to film nucleation and growth as well as the resistance of the films. A zone of intrinsic activity has been identified for all of the catalysts where the mass-averaged activity remains constant while the loading is increased. According to their intrinsic activities, the metal oxides can be classified into three categories: NiOx, MnOx, and FeOx belong to category I, which is the least active; CoOx and CoNiOx belong to category II, which has medium activity; and FeNiOx, CoFeOx, and CoFeNiOx belong to category III, which is the most active. The high turnover frequencies of CoFeOx and CoFeNiOx at low overpotentials and the simple deposition method allow the fabrication of high-performance anode electrodes coated with these catalysts. In 1 M KOH and with the most active electrode, overpotentials as low as 240 and 270 mV are required to reach 10 and 100 mA cm(-2), respectively.

  1. Low Temperature Annealed Zinc Oxide Nanostructured Thin Film-Based Transducers: Characterization for Sensing Applications

    PubMed Central

    Haarindraprasad, R.; Hashim, U.; Gopinath, Subash C. B.; Kashif, Mohd; Veeradasan, P.; Balakrishnan, S. R.; Foo, K. L.; Poopalan, P.

    2015-01-01

    The performance of sensing surfaces highly relies on nanostructures to enhance their sensitivity and specificity. Herein, nanostructured zinc oxide (ZnO) thin films of various thicknesses were coated on glass and p-type silicon substrates using a sol-gel spin-coating technique. The deposited films were characterized for morphological, structural, and optoelectronic properties by high-resolution measurements. X-ray diffraction analyses revealed that the deposited films have a c-axis orientation and display peaks that refer to ZnO, which exhibits a hexagonal structure with a preferable plane orientation (002). The thicknesses of ZnO thin films prepared using 1, 3, 5, and 7 cycles were measured to be 40, 60, 100, and 200 nm, respectively. The increment in grain size of the thin film from 21 to 52 nm was noticed, when its thickness was increased from 40 to 200 nm, whereas the band gap value decreased from 3.282 to 3.268 eV. Band gap value of ZnO thin film with thickness of 200 nm at pH ranging from 2 to 10 reduces from 3.263eV to 3.200 eV. Furthermore, to evaluate the transducing capacity of the ZnO nanostructure, the refractive index, optoelectric constant, and bulk modulus were analyzed and correlated. The highest thickness (200 nm) of ZnO film, embedded with an interdigitated electrode that behaves as a pH-sensing electrode, could sense pH variations in the range of 2-10. It showed a highly sensitive response of 444 μAmM-1cm-2 with a linear regression of R2 =0.9304. The measured sensitivity of the developed device for pH per unit is 3.72μA/pH. PMID:26167853

  2. Differential Adhesive and Bioactive Properties of the Polymeric Surface Coated with Graphene Oxide Thin Film.

    PubMed

    Thampi, Sudhin; Nandkumar, A Maya; Muthuvijayan, Vignesh; Parameswaran, Ramesh

    2017-02-08

    Surface engineering of implantable devices involving polymeric biomaterials has become an essential aspect for medical implants. A surface enhancement technique can provide an array of unique surface properties that improve its biocompatibility and functionality as an implant. Polyurethane-based implants that have found extensively acclaimed usage as an implant in biomedical applications, especially in the area of cardiovascular devices, still lack any mechanism to ward off bacterial or platelet adhesion. To bring out such a defense mechanism we are proposing a surface modification technique. Graphene oxide (GO) in very thin film form was wrapped onto the electrospun fibroporous polycarbonate urethane (PCU) membrane (GOPCU) by a simple method of electrospraying. In the present study, we have developed a simple single-step method for coating a polymeric substrate with a thin GO film and evaluated the novel antiadhesive activity of these films. SEM micrographs after coating showed the presence of very thin GO films over the PCU membrane. On the GOPCU surface, the contact angle was shifted by ∼30°, making the hydrophobic PCU surface slightly hydrophilic, while Raman spectral characterization and mapping showed the presence and distribution of GO over 75% of the membrane. A reduced platelet adhesion on the GOPCU surface was observed; meanwhile, bacterial adhesion also got reduced by 85% for Staphylococcus aureus (Gram positive, cocci) and 64% for Pseudomonas aeruginosa (Gram negative, bacilli). A cell adhesion study conducted using mammalian fibroblast cells projected its proliferation percentage in a MTT assay, with 82% cell survival on PCU and 86% on GOPCU after 24 h culture, while a study for an extended period of 72 h showed 87% of survival on PCU and 88% on GOPCU. This plethora of functionalities by a simple modification technique makes thin GO films a self-sufficient surface engineering material for future biomedical applications.

  3. The influence of a thin gold film on the optical spectral characteristics of a porous anodic aluminum-oxide membrane

    NASA Astrophysics Data System (ADS)

    Ushakov, N. M.; Vasilkov, M. Yu.; Fedorov, F. S.

    2017-07-01

    We have experimentally studied how a thin mesostructured gold film, deposited onto one side of a porous anodic aluminum-oxide membrane, influences its optical spectral characteristics in a 200-900 nm wavelength range. It is established that the gold film only modifies the spectral characteristics of the composite membrane at light wavelengths above 500 nm. The presence of a thin gold film ensures the surface conductivity of membrane on a level of 3.4 × 106 Ω-1 m-1, retains optical transparency within 10-20%, leads to the appearance of anomalous dispersion in the long-wavelength part of the transmission spectrum, and reduces the bandgap width from 5.61 eV (in anodic aluminum oxide) to 4.51 eV (in the composite). The obtained anodic aluminum-oxide membranes with thin gold films can be used as transparent conducting electrodes in optoelectronic devices with large light transmitter/receiver active areas.

  4. Oxide semiconductor thin-film transistors: a review of recent advances.

    PubMed

    Fortunato, E; Barquinha, P; Martins, R

    2012-06-12

    Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which

  5. Ultra-Flexible, Invisible Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends

    DTIC Science & Technology

    2015-02-25

    2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim2390 wileyonlinelibrary.com C O M M U N IC A TI O N Ultra-Flexible, “ Invisible ” Thin-Film...enable fully trans- parent thin-fi lm transistors (TFTs), which are essential for the fabrication of “ invisible ” circuits and to increase the...4. TITLE AND SUBTITLE Ultra-Flexible, ’ Invisible ’ Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends 5a. CONTRACT

  6. Improving the optoelectronic properties of titanium-doped indium tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Taha, Hatem; Jiang, Zhong-Tao; Henry, David J.; Amri, Amun; Yin, Chun-Yang; Mahbubur Rahman, M.

    2017-06-01

    The focus of this study is on a sol-gel method combined with spin-coating to prepare high-quality transparent conducting oxide (TCO) films. The structural, morphological, optical and electrical properties of sol-gel-derived pure and Ti-doped indium tin oxide (ITO) thin films were studied as a function of the concentration of the Ti (i.e. 0 at%, 2 at% and 4 at%) and annealing temperatures (150 °C-600 °C). FESEM measurements indicate that all the films are ˜350 nm thick. XRD analysis confirmed the cubic bixbyite structure of the polycrystalline indium oxide phase for all of the thin films. Increasing the Ti ratio, as well as the annealing temperature, improved the crystallinity of the films. Highly crystalline structures were obtained at 500 °C, with average grain sizes of about 50, 65 and 80 nm for Ti doping of 0 at%, 2 at% and 4 at%, respectively. The electrical and optical properties improved as the annealing temperature increased, with an enlarged electronic energy band gap and an optical absorption edge below 280 nm. In particular, the optical transmittance and electrical resistivity of the samples with a 4 at% Ti content improved from 87% and 7.10 × 10-4 Ω.cm to 92% and 1.6 × 10-4 Ω.cm, respectively. The conductivity, especially for the annealing temperature at 150 °C, is acceptable for many applications such as flexible electronics. These results demonstrate that unlike the more expensive and complex vacuum sputtering process, high-quality Ti-doped ITO films can be achieved by fast processing, simple wet-chemistry, and easy doping level control with the possibility of producing films with high scalability.

  7. Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Wang, Wei-Hsiang; Lyu, Syue-Ru; Heredia, Elica; Liu, Shu-Hao; Jiang, Pei-hsun; Liao, Po-Yung; Chang, Ting-Chang; Chen, Hua-Mao

    2017-01-01

    We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

  8. Investigation of long-term time dependencies of cathodoluminescence in thin film oxide phosphors for field emission displays

    SciTech Connect

    Bondar, V; Dubov, Y; Felter, T E; Popovish, S

    1999-06-27

    Thin film oxide phosphors are prospective for low-voltage field-emission display applications due to their appropriate color coordinates, high efficiency, and possibility of creation of increased conductivity in them. Long-term stability of phosphors is also very important for practical application. Therefore, long-term stability of the most efficient thin film oxide phosphors Y{sub 2}O{sub 3}:Eu, Zn{sub 2}SiO{sub 4}:Mn, Zn{sub 2}SiO{sub 4}:Ti, and Y{sub 2}SiO{sub 5}:Ce was investigated in present work.

  9. On the effect of non-degenerate doping of polysilicon gate in thin oxide MOS-devices—Analytical modeling

    NASA Astrophysics Data System (ADS)

    Habaš, Predrag; Selberherr, Siegfried

    1990-12-01

    A one-dimensional model of the polysilicon-gate-oxide-bulk structure is presented in order to analyze the implanted gate MOS-devices. The influence of the ionized impurity concentration in the polysilicon-gate near the oxide and the charge at the polysilicon-oxide interface on the flat-band voltage, threshold voltage, inversion layer charge and the quasi-static C- V characteristic is quantitatively studied. The calculations show a considerable degradation of the inversion layer charge due to the voltage drop in the gate, especially in thin oxide devices. The calculated quasi-static C- V curves agree with the recently published data of implanted gate devices.

  10. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    SciTech Connect

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  11. Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

    SciTech Connect

    Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won E-mail: swcha@snu.ac.kr; Ji, Sanghoon; Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom E-mail: swcha@snu.ac.kr; An, Jihwan

    2016-01-15

    Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

  12. Electro deposition of cuprous oxide for thin film solar cell applications

    NASA Astrophysics Data System (ADS)

    Shahrestani, Seyed Mohammad

    p and n type copper oxide semiconductor layers were fabricated by electrochemistry using new approaches for photovoltaic applications. Thin films were electroplated by cathodic polarization on a copper foil or indium tin oxide (ITO) substrates. The optimum deposition conditions (composition, pH and temperature of the electrolyte and applied potential) of the layers as thin films have been identified; in particular the conditions that allow getting the n-type layers have been well identified for the first time. The configuration of a photo - electrochemical cell was used to characterize the spectral response of the layers. It was shown that the p type layers exhibit a photocurrent in the cathode potential region and n layers exhibit photo current in the anode potential region. Measurements of electrical resistivity of electro chemically deposited layers of p and n type Cu2O, showed that the resistivity of p-type Cu2O varies from 3.2 x 105 to 2.0 x 108 Ocm. These values depend the electrodepositing conditions such as the pH of the solution, the deposition potential and temperature. The influence of several plating parameters of the p type layers of Cu2O, such as applied potential, pH and temperature of the bath on the chemical composition, degree of crystallinity, grain size and orientation parameters of the sample was systematically studied using X-ray diffraction and scanning electron microscopy. Depending of the electro-deposition potential, two different surface morphologies with various preferential crystal orientations were obtained for the temperatures of the electro-deposition of 30 °C and pH 9. For the same temperature, the layers of p type Cu2O of highly crystalline p type are obtained at pH 12, indicating that the crystallinity depends on the pH of the bath. Also, it has been shown that the morphology of Cu2O layers was changed by varying the potential and the duration of deposition, as well as the temperature of the solution. The conditions for the

  13. Accelerated formation of metal oxide thin film at 200 °C using oxygen supplied by a nitric acid additive and residual organic suction vacuum annealing for thin-film transistor applications.

    PubMed

    Jeong, Woong Hee; Kim, Dong Lim; Kim, Hyun Jae

    2013-09-25

    Oxide semiconductors have gradually replaced amorphous and polycrystalline silicon for thin-film transistor (TFT) because of their high mobility and large-area uniformity. Especially, the oxide semiconductors have also achieved the low-cost manufacturing using a solution process. However, because the solution-processed oxide semiconductors require a high thermal energy to form the oxide thin film, the additional solution synthesis and annealing process are needed for low-temperature solution process. Because the conventional solution-processed oxide thin films have low oxidation level and high residual organic concentration at low annealing temperature, we propose the novel solution process that includes the nitric acid additive and the vacuum ambient annealing as an oxidizing agent and a residual organic suction, respectively. Therefore, we have successfully developed the simple oxide solution process and the soluble InZnO TFT with high field-effect mobility of 3.38 cm(2)/(V s) at 200 °C.

  14. Understanding and Enhancing the Photostability of Nanoporous Metal Oxide Thin Films for Solar Hydrogen Generation

    NASA Astrophysics Data System (ADS)

    Chitrada, Kalyan Chakravarthi

    under dark conditions. The binary bismuth (III) oxide, in spite being a good photocatalytic material, did not receive as much attention as other bismuth based ternary oxides for photoelectrochemical water splitting application. In this present study, large surface area nanoporous bismuth oxide thin films were synthesized by the electrochemical anodization. These anodic oxides exhibited a dual layered structure having a planar inner oxide and nanoporous outer oxide. Effect of the nanoscale dimensions of the oxides on the photoelectrochemical behavior was studied to understand the charge transport, charge recombination behavior, and long term stability of the material. A maximum photo current density of 0.97 mA/cm2 was observed for the sample anodized at 10 V at 1.53 VRHE. The nanoporous anodic oxides showed a charge carrier density in the range of 1.2 x 1017 -- 4.8 x 1018 cm-3 without illumination and about 60% increase in the charge carrier density upon illumination. However a decay in photo current was observed for the bismuth oxide samples was due to accumulation of holes on the electrode surface. This hole-accumulation was mitigated by the addition of hole scavengers. Addition of hydrogen peroxide as hole scavenger increased the photo current density by about 4 times in 0.5 M Na2SO 4 (pH: 5.8) electrolyte. Addition of H2O2 in 1 M KOH (pH: 13.7) showed an increase-decrease behavior and high photo current density of ~10 mA/cm2 at a bias potential of 0.65 VRHE . The high photo activity observed in this electrolyte was attributed to the in-situ formation of Bi2O4-x phase by the photo-conversion of the beta-Bi2O3 at the surface. The photo-converted Bi2O4-x has a smaller band gap (1.4 eV) and therefore harvested more light in the visible region. This in-situ formation of low band gap phases in the presence of H2O2 during solar water splitting is an interesting observation which has been reported for the first time and this will help design material with very high photo-activity.

  15. The complex interface chemistry of thin-film silicon/zinc oxide solar cell structures.

    PubMed

    Gerlach, D; Wimmer, M; Wilks, R G; Félix, R; Kronast, F; Ruske, F; Bär, M

    2014-12-21

    The interface between solid-phase crystallized phosphorous-doped polycrystalline silicon (poly-Si(n(+))) and aluminum-doped zinc oxide (ZnO:Al) was investigated using spatially resolved photoelectron emission microscopy. We find the accumulation of aluminum in the proximity of the interface. Based on a detailed photoemission line analysis, we also suggest the formation of an interface species. Silicon suboxide and/or dehydrated hemimorphite have been identified as likely candidates. For each scenario a detailed chemical reaction pathway is suggested. The chemical instability of the poly-Si(n(+))/ZnO:Al interface is explained by the fact that SiO2 is more stable than ZnO and/or that H2 is released from the initially deposited a-Si:H during the crystallization process. As a result, Zn (a deep acceptor in silicon) is "liberated" close to the silicon/zinc oxide interface presenting the inherent risk of forming deep defects in the silicon absorber. These could act as recombination centers and thus limit the performance of silicon/zinc oxide based solar cells. Based on this insight some recommendations with respect to solar cell design, material selection, and process parameters are given for further knowledge-based thin-film silicon device optimization.

  16. Adsorption and Reaction of Methanethiol on Thin-Film Cerium Oxide

    SciTech Connect

    Mullins, David R; McDonald, Tom S

    2008-01-01

    The adsorption and reaction of methanethiol, CH{sub 3}SH, have been studied on cerium oxide thin films that were vapor deposited on Ru(0 0 0 1). The behavior of the CH{sub 3}SH was examined as a function of the Ce oxidation state. CH{sub 3}SH weakly interacts with fully oxidized CeO{sub 2}(1 1 1) forming both chemisorbed CH{sub 3}SH and CH{sub 3}S + OH. OH forms through the reaction of the sulfhydrol H with the surface O. These species recombine and desorb near 180 K leaving the surface virtually clean. When the ceria is ca. 50% reduced, the chemisorbed CH{sub 3}SH desorbs near 150 K while the CH{sub 3}S + OH are stable to 400 K. These species react above 450 K to produce predominantly CH{sub 4} and CH{sub 3}SH. A small amount of CH{sub 2}O and water are also formed through reaction with the O in the ceria. Atomic S is left on the surface. S 2p, C 1s and O 1s soft X-ray photoelectron spectroscopy were used to identify the nature of the chemisorbed species and the adsorption site of the CH{sub 3}S or S.

  17. High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

    PubMed Central

    2013-01-01

    Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm2 V–1 s–1. We show that it is possible to solution-process these materials at low process temperature (225–200 °C yielding mobilities up to 4.4 cm2 V–1 s–1) and demonstrate a facile “ink-on-demand” process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium. PMID:24511184

  18. Resistance repeatability study of ion-beam deposited vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Alvarez, P.; Pearson, D. I. C.; Pochon, S.; Thomas, O.; Cooke, M.; Gunn, R.

    2016-09-01

    Ion Beam Sputter Deposition (IBSD) is a versatile technique particularly suited to applications requiring high quality, high performance layer materials as it allows independent and accurate control of the process parameters. Vanadium oxides, used for example in the fabrication of microbolometers, optical switches or optical storage, exhibit interesting properties such as a high Temperature Coefficient of Resistance (TCR), relatively low 1/f noise and a semiconductormetal phase transition close to room temperature. However, it is very challenging to control the stoichiometry of the deposited film as there are at least 25 different oxidation states of vanadium, few of which display the required electrical characteristics. In the present study, vanadium oxide thin layers were deposited by IBSD using an Oxford Ionfab300+ and analyzed with regard to their electrical properties. The impact of the system parameters on the resistance repeatability, wafer-to-wafer and batch-to-batch, was thoroughly investigated to provide the end user with a clear understanding of the factors affecting film resistivity while ensuring at the same time a steep variation of resistance with temperature, as notably required for uncooled bolometers. These parameters were balanced to also achieve a good deposition rate, throughput and uniformity over large device areas, compatible with the requirements of industrial applications.

  19. Stability of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors with Treatment Processes

    NASA Astrophysics Data System (ADS)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-02-01

    The indium-gallium-zinc-aluminum-oxide (IGZAO) channel layer of the bottom-gate-type thin-film transistors (TFTs) was deposited on indium tin oxide-coated glass substrates using a magnetron radio frequency co-sputtering system with dual targets of indium gallium zinc oxide and Al. The 3 s orbital of Al cations provided an extra transport pathway and widened the bottom of the conduction band, thus increasing the electron mobility in the IGZAO films. The Al-O bonds could sustain the stability of oxygen of the IGZAO films. The IGZAO TFTs were processed by O2 plasma and post-annealing treatments. Hysteresis analysis was carried out in order to study the stability of the resulting IGZAO TFTs, the positive bias temperature stress (PBTS) performance, and the hot carrier effect were also measured. For the IGZAO TFTs, the threshold voltage shift of the PBTS performance and the hot carrier effect were 0.1 V and 0.06 V, respectively. Overall, the IGZAO TFTs exhibited good stability in this study.

  20. In situ oxidation studies on /001/ copper-nickel alloy thin films

    NASA Technical Reports Server (NTRS)

    Heinemann, K.; Rao, D. B.; Douglass, D. L.

    1977-01-01

    High-resolution transmission electron microscopy studies are reported of (001)-oriented single crystalline thin films of Cu-3%Ni, Cu-4.6%Ni, and Cu-50%Ni alloy which were prepared by vapor deposition onto (001) NaCl substrates and subsequently annealed at around 1100 K and oxidized at 725 K at low oxygen partial pressure. At all alloy concentrations, Cu2O and NiO nucleated and grew independently without the formation of mixed oxides. The shape and growth rates of Cu2O nuclei were similar to rates found earlier. For low-nickel alloy concentrations, the NiO nuclei were larger and the number density of NiO was less than that of Cu-50%Ni films for which the shape and growth rates of NiO were identical to those for pure nickel films. Phenomena involving a reduced induction period, surface precipitation, and through-thickness growth are also described. The results are consistent with previously established oxidation mechanisms for pure copper and pure nickel films.

  1. In situ oxidation studies on /001/ copper-nickel alloy thin films

    NASA Technical Reports Server (NTRS)

    Heinemann, K.; Rao, D. B.; Douglass, D. L.

    1977-01-01

    High-resolution transmission electron microscopy studies are reported of (001)-oriented single crystalline thin films of Cu-3%Ni, Cu-4.6%Ni, and Cu-50%Ni alloy which were prepared by vapor deposition onto (001) NaCl substrates and subsequently annealed at around 1100 K and oxidized at 725 K at low oxygen partial pressure. At all alloy concentrations, Cu2O and NiO nucleated and grew independently without the formation of mixed oxides. The shape and growth rates of Cu2O nuclei were similar to rates found earlier. For low-nickel alloy concentrations, the NiO nuclei were larger and the number density of NiO was less than that of Cu-50%Ni films for which the shape and growth rates of NiO were identical to those for pure nickel films. Phenomena involving a reduced induction period, surface precipitation, and through-thickness growth are also described. The results are consistent with previously established oxidation mechanisms for pure copper and pure nickel films.

  2. α-Silicene as oxidation-resistant ultra-thin coating material

    PubMed Central

    Iyikanat, Fadil; Bacaksiz, Cihan

    2017-01-01

    By performing density functional theory (DFT)-based calculations, the performance of α-silicene as oxidation-resistant coating on Ag(111) surface is investigated. First of all, it is shown that the Ag(111) surface is quite reactive against O atoms and O2 molecules. It is known that when single-layer silicene is formed on the Ag(111) surface, the 3 × 3-reconstructed phase, α-silicene, is the ground state. Our investigation reveals that as a coating layer, α-silicene (i) strongly absorbs single O atoms and (ii) absorbs O2 molecules by breaking the strong O–O bond. (iii) Even the hollow sites, which are found to be most favorable penetration path for oxygens, serves as high-energy oxidation barrier, and (iv) α-silicene becomes more protective and less permeable in the presence of absorbed O atom. It appears that single-layer silicene is a quite promising material for ultra-thin oxidation-protective coating applications. PMID:28904842

  3. In situ work function study of oxidation and thin film growth on clean surfaces

    NASA Astrophysics Data System (ADS)

    Baikie, I. D.; Petermann, U.; Lägel, B.

    1999-08-01

    Using a novel ultra high vacuum compatible Kelvin probe we have studied the work function ( φ) changes on semiconductors and metals occurring during basic surface processing, for example, surface cleaning, sputtering, oxidation and thin film growth. We show that damage of the 7×7 reconstruction due to Ar ion bombardment has a profound influence on the work function changes (Δ φ) during oxidation on the Si(111) surface, tending to decrease or even reverse the surface dipole. We have also followed the variable temperature oxidation kinetics of Si(111) in the range of 100-600 K and show that magnitude of the Δ φpeak during the initial adsorption curve decreases in a linear fashion with increasing substrate temperature. We interpret this as being due to the rapid onset of oxygen permeation through the surface layer at higher temperatures producing a reverse or zero net dipole. Combining work function data with a localized technique such as scanning tunnelling microscopy permits monitoring of surface processes at both microscopic and macroscopic levels. In conjunction with Professor Behm's group at Ulm University, Germany, we have monitored work function changes during evaporation of Al on Ru(0001) and show correlation between changes in φ with topographic features such as island growth mechanism, monolayer formation, etc.

  4. Adsorption and reaction of methanethiol on thin-film cerium oxide

    NASA Astrophysics Data System (ADS)

    Mullins, D. R.; McDonald, T. S.

    2008-03-01

    The adsorption and reaction of methanethiol, CH 3SH, have been studied on cerium oxide thin films that were vapor deposited on Ru(0 0 0 1). The behavior of the CH 3SH was examined as a function of the Ce oxidation state. CH 3SH weakly interacts with fully oxidized CeO 2(1 1 1) forming both chemisorbed CH 3SH and CH 3S + OH. OH forms through the reaction of the sulfhydrol H with the surface O. These species recombine and desorb near 180 K leaving the surface virtually clean. When the ceria is ca. 50% reduced, the chemisorbed CH 3SH desorbs near 150 K while the CH 3S + OH are stable to 400 K. These species react above 450 K to produce predominantly CH 4 and CH 3SH. A small amount of CH 2O and water are also formed through reaction with the O in the ceria. Atomic S is left on the surface. S 2p, C 1s and O 1s soft X-ray photoelectron spectroscopy were used to identify the nature of the chemisorbed species and the adsorption site of the CH 3S or S.

  5. Chromatic annuli formation and sample oxidation on copper thin films by femtosecond laser

    NASA Astrophysics Data System (ADS)

    He, Shutong; Amoruso, Salvatore; Pang, Dongqing; Wang, Chingyue; Hu, Minglie

    2016-04-01

    We report an experimental investigation on the irradiation of copper thin films with high repetition rate femtosecond laser pulses (1040 nm, 50 MHz), in ambient air and liquid water. We observe a novel, striking phenomenon of chromatic copper oxides (CuO and Cu2O) annuli generation. The characteristic features of the chromatic copper oxide annuli are studied by exploiting micro-Raman spectroscopy, optical and scanning electron microscopies. In the case of irradiation in water, the seldom investigated effects of the immersion time, tw, after irradiation with a fixed number of pulses are analyzed, and an intriguing dependence of the color of the chromatic annuli on tw is observed. This remarkable behavior is explained by proposing an interpretation scenario addressing the various processes involved in the process. Our experimental findings show that Cu2O nanoparticles (size of ≈20 nm) and Cu2O nanocubes (nanocube edges of ≈30, ≈60 nm) can be effectively generated by exploiting high repetition rate laser-assisted oxidation.

  6. Fatigue failure in thin-film polysilicon is due to subcriticalcracking within the oxide layer

    SciTech Connect

    Alsem, D.H.; Muhlstein, C.L.; Stach, E.A.; Ritchie, R.O.

    2005-01-11

    It has been established that microelectromechanical systems (MEMS) created from polycrystalline silicon thin-films are subject to cyclic fatigue. Prior work by the authors has suggested that although bulk silicon is not susceptible to fatigue failure in ambient air, fatigue in micron-scale silicon is a result of a ''reaction-layer'' process, whereby high stresses induce a thickening of the post-release oxide at stress concentrations such as notches, which subsequently undergoes moisture-assisted cracking. However, there exists some controversy regarding the post-release oxide thickness of the samples used in the prior study. In this Letter, we present data from devices from a more recent fabrication run that confirm our prior observations. Additionally, new data from tests in high vacuum show that these devices do not fatigue when oxidation and moisture are suppressed. Each of these observations lends credence to the '''reaction-layer'' mechanism. Recent advances in the design of microelectromechanical systems (MEMS) have increased the demand for more reliable microscale structures. Although silicon is an effective and widely used structural material at the microscale, it is very brittle. Consequently, reliability is a limiting factor for commercial and defense applications. Since the surface to volume ratio of these structural films is very large, classical models for failure modes in bulk materials cannot always be applied. For example, whereas bulk silicon is immune to cyclic fatigue failure thin micron-scale structural films of silicon appear to be highly susceptible. It is clear that at these size scales, surface effects may become dominant in controlling mechanical properties. The main reliability issues for MEMS are stiction, fatigue and wear. Fatigue is important in cases where devices are subjected to a large number of loading cycles with amplitudes below their (single-cycle) fracture stress, which may arise due to vibrations intentionally induced in the

  7. Magnetic and electrical properties of transition-metal-doped oxide thin films

    NASA Astrophysics Data System (ADS)

    Lam, Ching Yee

    In this research programme, the electrical and magnetic properties of PLD and room temperature grown TM-doped TiO2 and TM-doped Cu xO thin films have been investigated. We used Co and Fe as the TM dopants for the TiO2 based films. Mn was however used to dope the Cu xO materials systems. Among the various electrical properties, resistive switching of transition-metal oxide thin films and electrical rectifying property of an all-oxide p-n diode have been studied. The resistive switching of anatase phase TM-doped TiO 2 has been determined using two top-down configurations of Ag/TM-doped TiO2/Pt and In/TM-doped TiO2/TiN. Despite the fact that same transition-metal oxide was used, the switching characteristics of these two configurations were significantly different. For example, both the unipolar and bipolar switching were observed in pure TiO2 films. Heterostructures of Ag/TiO2/Pt have also been deposited on flexible PET substrates at room temperature by PLD. These oxide films on flexible substrate not only show resistive switching, but produce an average switching ratio as high as over 6 orders of magnitude. The resistive switching in In/CuxO/Pt and In/Mn-doped CuxO/Pt films have also been demonstrated in the present study. Our results indicate clearly that the switching stability of the In/CuxO/Pt systems is improved by the Mn-doping. Our ultimate goal is to produce a ferromagnetic all-oxide p-n junction diode. We obtained room-temperature ferromagnetism in the epitaxially grown anatase n-type Co-doped TiO2 and possible p-type Fe-doped TiO 2 thin films. At the same time, the 3.7 at.% Mn-doped Cu2O epitaxial films have been prepared. They are p-type conducting and have been properly utilized to form good rectifying all-oxide heterojunction with the n-type Nb-SrTiO3 substrates. The p-type Mn-doped Cu2O films that we have made so far, although exhibit ferromagnetism at low temperatures <50K, do not reveal any room temperature ferromagnetic characteristics. It is

  8. Chemical vapour deposition of tungsten oxide thin films from single-source precursors

    NASA Astrophysics Data System (ADS)

    Cross, Warren Bradley

    This thesis describes the chemical vapour deposition (CVD) of tungsten oxide thin films on glass from a wide range of single-source precursors. Chapter 1 describes previous work that has motivated this research. Chapter 2 discusses the synthesis of conventional style candidates for single-source precursors. Reactions of WOCl4 with 3-methyl salicylic acid (MesaliH2) and 3,5-di-iso-propyl salicylic acid (di-i-PrsaliH2) yielded the ditungsten complexes [WO(Mesali)(MesaliH)2(mu-O)], 1, and [WO(di-i-Prsali)(di-i-PrsaliH)2(mu-O)], 2, and the monotungsten complex [WO(di-i-Pr sali)(di-i-PrsaliH)Cl], 3. Tungsten(VI) dioxo complexes were prepared by ligand exchange reactions of [WO2(acac)2], 4, yielding [WO2(catH)2], 5, and [WO2(malt)2], 6, (catH2 = 3,5-di-tert-butyl-catechol; maltH = maltol). Chapter 3 describes thermal analyses of the complexes 1 - 6 and tungsten hexaphenoxide, and consequently their suitability for CVD. The use of [W(OPh)6] and 2 - 6 in aerosol assisted CVD is reported in Chapter 4. Brown tungsten oxide was deposited from 2 and 3 at 600 °C; blue partially-reduced WO3-x thin films were deposited from [W(OPh)6] from 300 to 500 °C, from 4 at 600 °C and 6 at 620 °C. Sintering all of the coatings in air at 550 °C afforded yellow films of stoichiometric WO3. Raman spectroscopy and glancing angle XRD showed that coatings deposited from [W(OPh)6] at 300 °C were amorphous, whereas all the other films were the monoclinic phase gamma-tungsten oxide. Taking full advantage of the aerosol vaporisation technique led to the CVD of tungsten oxide films from polyoxometalate single-source precursors, as described in Chapter 5. The isopolyanion [nBu4N]2[W6O19], 7, afforded WO3 at 410 °C; the heteropolyanions [nBu4N]4H3[PW11O39], 8, and [nBu4N]4[PNbW11O40], 9, were used to deposit doped WO3 thin films in a highly-controlled manner at 480 °C. Thus, the unprecedented use of large, charged clusters for CVD was demonstrated. Chapter 6 describes investigations of the

  9. Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

    SciTech Connect

    Skarlinski, Michael D.; Quesnel, David J.

    2015-12-21

    Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the

  10. Use of aluminum oxide as a permeation barrier for producing thin films on aluminum substrates

    SciTech Connect

    Provo, James L.

    2016-07-15

    Aluminum has desirable characteristics of good thermal properties, good electrical characteristics, good optical properties, and the characteristic of being nonmagnetic and having a low atomic weight (26.98 g atoms), but because of its low melting point (660 °C) and ability as a reactive metal to alloy with most common metals in use, it has been ignored as a substrate material for use in processing thin films. The author developed a simple solution to this problem, by putting a permeation barrier of alumina (Al{sub 2}O{sub 3}) onto the surface of pure Al substrates by using a standard chemical oxidation process of the surface (i.e., anodization), before additional film deposition of reactive metals at temperatures up to 500 °C for 1-h, without the formation of alloys or intermetallic compounds to affect the good properties of Al substrates. The chromic acid anodization process used (MIL-A-8625) produced a film barrier of ∼(500–1000) nm of alumina. The fact that refractory Al{sub 2}O{sub 3} can inhibit the reaction of metals with Al at temperatures below 500 °C suggests that Al is a satisfactory substrate if properly oxidized prior to film deposition. To prove this concept, thin film samples of Cr, Mo, Er, Sc, Ti, and Zr were prepared on anodized Al substrates and studied by x-ray diffraction, Rutherford ion back scattering, and Auger/argon sputter surface profile analysis to determine any film substrate interactions. In addition, a major purpose of our study was to determine if ErD{sub 2} thin films could be produced on Al substrates with fully hydrided Er films. Thus, a thin film of ErD{sub 2} on an anodized Al substrate was prepared and studied, with and without the alumina permeation barrier. Films for study were prepared on 1.27 cm diameter Al substrates with ∼500 nm of the metals studied after anodization. Substrates were weighed, cleaned, and vacuum fired at 500 °C prior to use. The Al substrates were deposited using standard electron

  11. Sol-gel deposition and plasma treatment of intrinsic, aluminum-doped, and gallium-doped zinc oxide thin films as transparent conductive electrodes

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2015-09-01

    Zinc oxide and aluminum/gallium-doped zinc oxide thin films were deposited via sol-gel spin-coating technique. Employing plasma treatment as alternative to post thermal annealing, we found that the morphologies of these thin films have changed and the sheet resistances have been significantly enhanced. These plasma-treated thin films also show very good optical properties, with transmittance above 90% averaged over the visible wavelength range. Our best aluminum/gallium-doped zinc oxide thin films exhibit sheet resistances (Rs) of ~ 200 Ω/sq and ~ 150 Ω/sq, respectively.

  12. Chemical vapor deposition of metal diboride and metal oxide thin films from borohydride-bonded precursors

    NASA Astrophysics Data System (ADS)

    Yang, Yu

    Metal borohydrides denotes the type of metal complex in which the metals are connected to the surrounding ligands through boron-hydrogen bridge bonds. They are excellent CVD precursors owning to their outstanding volatility and high reactivity. Transition metal diboride and metal oxide thin films suitable for various technological applications are deposited from these novel precursors. In this dissertation, comprehensive investigations of thin film growth rate, composition, and properties as a function of precursor pressure and substrate temperature were carried out for the CVD of HfB2 and MgO. It is determined that their CVD growth kinetics can be well explained with a Langmuir surface reaction mechanism. A structure zone model is proposed to explain the microstructure-process relationship of the CVD thin films in general. In future generations of microelectronics fabrication, materials need to be deposited into recess features with smaller dimensions and higher aspect ratios. A new approach is developed to obtain super-conformal coating (bottom-up filling) of such high aspect ratio features. The super-conformal growth is demonstrated in the CVD of CrB2 and HfB2 films from the corresponding borohydride precursors with atomic and molecular growth suppressors. Computer simulation is employed to understand the mechanism of the super-conformal deposition. The high Tc superconductor MgB2 were deposited at low temperatures (T = 300°C--400°C) from a recently developed highly volatile borohydride-bonded Mg precursor, by means of catalyst-enhanced chemical vapor deposition. The films are stoichiometric and highly crystallized, however, the lattice constants shift away from the MgB2 structure to the diboride structure of the catalyst metal, suggesting that Mg is partially substituted by the corresponding metals.

  13. The solid state conversion reaction of cobalt oxide and iron fluoride thin films

    NASA Astrophysics Data System (ADS)

    Thorpe, Ryan

    Iron (II) fluoride and cobalt (II) oxide are candidate electrode materials for a new class of rechargeable lithium ion batteries known as conversion batteries. Although the energy storage capacity of these materials represents a significant improvement over that of conventional electrode materials, many challenges must be overcome before conversion batteries can become commercially viable. Chief among these challenges is a loss of energy storage capacity as a function of the number of charge-discharge cycles. In this study, FeF2 and CoO thin films have been studied as solid state analogues for lithium ion battery electrodes. These films were grown with different crystalline orientations and exposed to lithium in an ultra high vacuum chamber in order to simulate the discharge of a conversion electrode. The electronic structure and chemical phase of the films before and after exposure to lithium were characterized using x-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), and inverse photoemission spectroscopy (IPS). The depth and homogeneity of the conversion reaction in the thin films was measured as a function of lithium exposure using angle-resolved XPS (ARXPS). The crystalline structure and morphology were studied using scanning tunneling microscopy (STM) and transmission electron microscopy (TEM). For polycrystalline FeF2 and CoO films, the products of the solid state conversion reactions were similar to those observed in electrochemical measurements. However, parasitic reaction pathways were identified for both reactions. The products of these reaction were found to inhibit the full conversion of the thin films, and are possibly responsible for the poor reaction kinetics in electrochemical cells. Furthermore, the diffusion of lithium into the FeF2 and CoO surfaces, and the concomitant conversion reaction, was found to depend strongly on the orientation of the surface. These differences in diffusivity could partially be

  14. New strain states and radical property tuning of metal oxides using a nanocomposite thin film approach

    NASA Astrophysics Data System (ADS)

    MacManus-Driscoll, Judith; Suwardi, Ady; Kursumovic, Ahmed; Bi, Zhenxing; Tsai, Chen-Fong; Wang, Haiyan; Jia, Quanxi; Lee, Oon Jew

    2015-06-01

    Auxetic-like strain states were generated in self-assembled nanocomposite thin films of (Ba0.6Sr0.4TiO3)1-x - (Sm2O3)x(BSTO - SmO). A switch from auxetic-like to elastic-like strain behavior was observed for x > 0.50, when the SmO switched from being nanopillars in the BSTO matrix to being the matrix with BSTO nanopillars embedded in it. A simple model was adopted to explain how in-plane strain varies with x. At high x (0.75), strongly enhanced ferroelectric properties were obtained compared to pure BSTO films. The nanocomposite method represents a powerful new way to tune the properties of a wide range of strongly correlated metal oxides whose properties are very sensitive to strain.

  15. F2-laser patterning of indium tin oxide (ITO) thin film on glass substrate

    NASA Astrophysics Data System (ADS)

    Xu, M. Y.; Li, J.; Lilge, L. D.; Herman, P. R.

    2006-10-01

    This paper reports the controlled micromachining of 100 nm thick indium tin oxide (ITO) thin films on glass substrates with a vacuum-ultraviolet 157 nm F2 laser. Partial to complete film removal was observed over a wide fluence window from 0.49 J/cm2 to an optimized single pulse fluence of 4.5 J/cm2 for complete film removal. Optical microscopy, atomic force microscopy, and energy dispersive X-ray analysis show little substrate or collateral damage by the laser pulse which conserved the stoichiometry, optical transparency and electrical conductivity of ITO coating adjacent to the trenches. At higher fluence, a parallel micron sized channel can be etched in the glass substrate. The high photon energy and top-hat beam homogenized optical system of the F2 laser opens new means for direct structuring of electrodes and microchannels in biological microfluidic systems or in optoelectronics.

  16. Research Update: Stoichiometry controlled oxide thin film growth by pulsed laser deposition

    SciTech Connect

    Groenen, Rik; Smit, Jasper; Orsel, Kasper; Vailionis, Arturas; Bastiaens, Bert; Huijben, Mark; Boller, Klaus; Rijnders, Guus; Koster, Gertjan

    2015-07-01

    The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO{sub 3} thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was observed by X-ray diffraction that SrTiO{sub 3} stoichiometry depends on the composition of the background gas during deposition, where in a relative small pressure range between 10{sup −2} mbars and 10{sup −1} mbars oxygen partial pressure, the resulting film becomes fully stoichiometric. Furthermore, upon increasing the oxygen (partial) pressure, the growth mode changes from 3D island growth to a 2D layer-by-layer growth mode as observed by reflection high energy electron diffraction.

  17. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Zhou, Dayu; Xu, Jin; Li, Qing; Guan, Yan; Cao, Fei; Dong, Xianlin; Müller, Johannes; Schenk, Tony; Schröder, Uwe

    2013-11-01

    Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation. High field cycling causes a "wake-up" in virgin "pinched" polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up.

  18. Numerical simulation of offset-drain amorphous oxide-based thin-film transistors

    NASA Astrophysics Data System (ADS)

    Jeong, Jaewook

    2016-11-01

    In this study, we analyzed the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with an offset-drain structure by technology computer aided design (TCAD) simulation. When operating in a linear region, an enhancement-type TFT shows poor field-effect mobility because most conduction electrons are trapped in acceptor-like defects in an offset region when the offset length (L off) exceeds 0.5 µm, whereas a depletion-type TFT shows superior field-effect mobility owing to the high free electron density in the offset region compared with the trapped electron density. When operating in the saturation region, both types of TFTs show good field-effect mobility comparable to that of a reference TFT with a large gate overlap. The underlying physics of the depletion and enhancement types of offset-drain TFTs are systematically analyzed.

  19. Electromechanical Breakdown of Barrier-Type Anodized Aluminum Oxide Thin Films Under High Electric Field Conditions

    NASA Astrophysics Data System (ADS)

    Chen, Jianwen; Yao, Manwen; Yao, Xi

    2016-02-01

    Barrier-type anodized aluminum oxide (AAO) thin films were formed on a polished aluminum substrate via electrochemical anodization in 0.1 mol/L aqueous solution of ammonium pentaborate. Electromechanical breakdown occurred under high electric field conditions as a result of the accumulation of mechanical stress in the film-substrate system by subjecting it to rapid thermal treatment. Before the breakdown event, the electricity of the films was transported in a highly nonlinear way. Immediately after the breakdown event, dramatic cracking of the films occurred, and the cracks expanded quickly to form a mesh-like dendrite network. The breakdown strength was significantly reduced because of the electromechanical coupling effect, and was only 34% of the self-healing breakdown strength of the AAO film.

  20. Thin Solid Films Topical Special Issue on ZnO related transparent conductive oxides

    SciTech Connect

    Chu, Jinn P.; Endo, Tamio; Ellmer, Klaus; Gessert, Tim; Ginley, David

    2016-04-01

    World-wide research activities on ZnO and related transparent conductive oxides (TCO) in thin film, nanostructured, and multilayered forms are driven by the vast potential of these materials for optoelectronic, microelectronic, and photovoltaic applications. Renewed interest in ZnO applications is partly stimulated by cost reduction in material processing and device development. One of the most important issues is doping and alloying with Al, Ga, In, Sn, etc. in order to tune properties. When highly doped, these materials are used as transparent-conducting contacts on solar cells, as well as in catalytic, spintronic, and surface acoustic wave devices. Film growth conditions, including substrate type and orientation, growth temperature, deposition rate, and ambient atmosphere, all play important roles in determining structural, electrical, magnetic, and optical properties.