Improvements of anti-corrosion and mechanical properties of NiTi orthopedic materials by acetylene, nitrogen and oxygen plasma immersion ion implantation

NASA Astrophysics Data System (ADS)

Poon, Ray W. Y.; Ho, Joan P. Y.; Liu, Xuanyong; Chung, C. Y.; Chu, Paul K.; Yeung, Kelvin W. K.; Lu, William W.; Cheung, Kenneth M. C.

2005-08-01

Nickel-titanium shape memory alloys (NiTi) are useful materials in orthopedics and orthodontics due to their unique super-elasticity and shape memory effects. However, the problem associated with the release of harmful Ni ions to human tissues and fluids has been raising safety concern. Hence, it is necessary to produce a surface barrier to impede the out-diffusion of Ni ions from the materials. We have conducted acetylene, nitrogen and oxygen plasma immersion ion implantation (PIII) into NiTi alloys in an attempt to improve the surface properties. All the implanted and annealed samples surfaces exhibit outstanding corrosion and Ni out-diffusion resistance. Besides, the implanted layers are mechanically stronger than the substrate underneath. XPS analyses disclose that the layer formed by C2H2 PIII is composed of mainly TiCx with increasing Ti to C concentration ratios towards the bulk. The nitrogen PIII layer is observed to be TiN, whereas the oxygen PIII layer is composed of oxides of Ti4+, Ti3+ and Ti2+.

Optical and Structural Properties of Ion-implanted InGaZnO Thin Films Studied with Spectroscopic Ellipsometry and Transmission Electron Microscopy

NASA Astrophysics Data System (ADS)

Park, Jun Woo; Jeong, Pil Seong; Choi, Suk-Ho; Lee, Hosun; Kong, Bo Hyun; Koun Cho, Hyung

2009-11-01

Amorphous InGaZnO (IGZO) thin films were grown using RF sputtering deposition at room temperature and their corresponding dielectric functions were measured. In order to reduce defects and increase carrier concentrations, we examined the effect of forming gas annealing and ion implantation. The band gap energy increased with increasing forming gas annealing temperature. We implanted the IGZO thin films with F- ions in order to decrease oxygen vacancies. For comparison, we also implanted InO- ions. Transmission electron microscopy showed that the amorphous phase undergoes transformation to a nanocrystalline phase due to annealing. We also observed InGaZnO4 nanocrystals having an In-(Ga/Zn) superlattice structure. As the annealing temperature increased, the optical gap energy increased due to crystallization. After annealing, we observed an oxygen-vacancy-related 1.9 eV peak for both unimplanted and InO-implanted samples. However, F- ion implantation substantially reduced the amplitude of the 1.9 eV peak, which disappeared completely at a F fluence of 5×1015 cm-2. We observed other defect-related peaks at 3.6 and 4.2 eV after annealing, which also disappeared after F implantation.

Surface modification of Monel K-500 as a means of reducing friction and wear in high-pressure oxygen

NASA Technical Reports Server (NTRS)

Gunaji, Mohan; Stoltzfus, Joel M.; Schoenman, Leonard; Kazaroff, John

1989-01-01

A study is conducted of the tribological characteristics of Monel K-500 during rubbing in a high pressure oxygen atmosphere, upon surface treatment by ion-implanted oxygen, chromium, lead, and silver, as well as electrolyzed chromium and an electroless nickel/SiC composite. The electrolyzed chromium dramatically increased total sample wear, while other surface treatments affected sample wear only moderately. Although the ion-implant treatments reduced the average coefficient of friction at low contact pressure, higher contact pressures eliminated this improvement.

XANES study of Fe-implanted strontium titanate

NASA Astrophysics Data System (ADS)

Lobacheva, O.; Goncharova, L. V.; Chavarha, M.; Sham, T. K.

2014-03-01

Properties of strontium titanate SrTiO3 (STO) depend to a great extent on the substitutional dopants and defects of crystal structure. The ion beam implantation method was used for doping STO (001) crystals with Fe at different doses. Implanted samples were then annealed at 350°C in oxygen to induce recrystallization and remove oxygen vacancies produced during ion implantation process. The effect of Fe doping and post-implantation annealing was studied by X-ray Absorption Near Edge Spectroscopy (XANES) method and Superconducting Quantum Interference Device (SQUID). XANES allowed to monitor the change in structure of STO crystals and in the local environment of Fe following the implantation and annealing steps. SQUID measurements revealed correlation between magnetic moment and Fe implantation dose. Ferromagnetic hysteresis was observed on selected Fe-implanted STO at 5 K. The observed magnetic properties can be correlated with the several Fe oxide phases in addition to the presence of O/Ti vacancies.

Structured back gates for high-mobility two-dimensional electron systems using oxygen ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berl, M., E-mail: mberl@phys.ethz.ch; Tiemann, L.; Dietsche, W.

2016-03-28

We present a reliable method to obtain patterned back gates compatible with high mobility molecular beam epitaxy via local oxygen ion implantation that suppresses the conductivity of an 80 nm thick silicon doped GaAs epilayer. Our technique was optimized to circumvent several constraints of other gating and implantation methods. The ion-implanted surface remains atomically flat which allows unperturbed epitaxial overgrowth. We demonstrate the practical application of this gating technique by using magneto-transport spectroscopy on a two-dimensional electron system (2DES) with a mobility exceeding 20 × 10{sup 6} cm{sup 2}/V s. The back gate was spatially separated from the Ohmic contacts of the 2DES,more » thus minimizing the probability for electrical shorts or leakage and permitting simple contacting schemes.« less

Method of fabricating optical waveguides by ion implantation doping

DOEpatents

Appleton, B.R.; Ashley, P.R.; Buchal, C.J.

1987-03-24

A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO/sub 3/ crystals are implanted with high concentrations of Ti dopant at ion energies of about 360 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000/degree/C produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguiding properties.

Characterization of PEEK, PET and PI implanted with Mn ions and sub-sequently annealed

NASA Astrophysics Data System (ADS)

Mackova, A.; Malinsky, P.; Miksova, R.; Pupikova, H.; Khaibullin, R. I.; Slepicka, P.; Gombitová, A.; Kovacik, L.; Svorcik, V.; Matousek, J.

2014-04-01

Polyimide (PI), polyetheretherketone (PEEK) and polyethylene terephthalate (PET) foils were implanted with 80 keV Mn+ ions at room temperature at fluencies of 1.0 × 1015-1.0 × 1016 cm-2. Mn depth profiles determined by RBS were compared to SRIM 2012 and TRIDYN simulations. The processes taking place in implanted polymers under the annealing procedure were followed. The measured projected ranges RP differ slightly from the SRIM and TRIDYN simulation and the depth profiles are significantly broader (up to 2.4 times) than those simulated by SRIM, while TRIDYN simulations were in a reasonable agreement up to the fluence 0.5 × 1016 in PEEK. Oxygen and hydrogen escape from the implanted layer was examined using RBS and ERDA techniques. PET, PEEK and PI polymers exhibit oxygen depletion up to about 40% of its content in virgin polymers. The compositional changes induced by implantation to particular ion fluence are similar for all polymers examined. After annealing no significant changes of Mn depth distribution was observed even the further oxygen and hydrogen desorption from modified layers appeared. The surface morphology of implanted polymers was characterized using AFM. The most significant change in the surface roughness was observed on PEEK. Implanted Mn atoms tend to dissipate in the polymer matrix, but the Mn nanoparticles are too small to be observed on TEM micrographs. The electrical, optical and structural properties of the implanted and sub-sequently annealed polymers were investigated by sheet resistance measurement and UV-Vis spectroscopy. With increasing ion fluence, the sheet resistance decreases and UV-Vis absorbance increases simultaneously with the decline of optical band gap Eg. The most pronounced change in the resistance was found on PEEK. XPS spectroscopy shows that Mn appears as a mixture of Mn oxides. Mn metal component is not present. All results were discussed in comparison with implantation experiment using the various ion species (Ni, Co) and energies used in our former experiments. Interesting differences were found in Mn concentration distribution, Mn nano-particle creation and structural changes comparing to Ni, Co ions implantation into the same polymers.

Ion implantation method for preparing polymers having oxygen erosion resistant surfaces

DOEpatents

Lee, Eal H.; Mansur, Louis K.; Heatherly, Jr., Lee

1995-01-01

Hard surfaced polymers and the method for making them are generally described. Polymers are subjected to simultaneous multiple ion beam bombardment, that results in a hardening of the surface, improved wear resistance, and improved oxygen erosion resistance.

Method of fabricating optical waveguides by ion implantation doping

DOEpatents

Appleton, Bill R.; Ashley, Paul R.; Buchal, Christopher J.

1989-01-01

A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.

Ion implantation method for preparing polymers having oxygen erosion resistant surfaces

DOEpatents

Lee, E.H.; Mansur, L.K.; Heatherly, L. Jr.

1995-04-18

Hard surfaced polymers and the method for making them are generally described. Polymers are subjected to simultaneous multiple ion beam bombardment, that results in a hardening of the surface, improved wear resistance, and improved oxygen erosion resistance. 8 figs.

Compositional transformations in ion implanted polymers

NASA Astrophysics Data System (ADS)

Abdul-Kader, A. M.; Turos, A.; Grambole, D.; Jagielski, J.; Piątkowska, A.; Madi, N. K.; Al-Maadeed, M.

2005-10-01

Changes of surface layer composition produced by ion bombardment of polyethylene and polypropylene samples were studied. These materials are under consideration for load bearing surfaces in biological and technical applications. To improve their tribological properties, surface layers are usually modified by ionizing radiation. Therefore, to study the mechanism of transformations induced by ion beam bombardment selected polymers were implanted with H, He and Ar ions to the fluences ranging from 1 × 1013 to 2 × 1016/cm2. RBS and NRA techniques were applied for sample analysis. Important hydrogen release was observed with increasing ion dose and was correlated with the ion stopping power. Another important effect observed was the rapid oxidation of samples, which apparently occurs after exposure of implanted samples to the air. Up to 10 at.% of oxygen can be incorporated in the implanted layer.

Polymer Treatment by Plasma Immersion Ion Implantation of Nitrogen for Formation of Diamond-Like Carbon Film

NASA Astrophysics Data System (ADS)

Tan, Ing Hwie; Ueda, Mario; Kostov, Konstantin; Nascente, Pedro Augusto P.; Demarquette, Nicole Raymonde

2004-09-01

Nitrogen ions were implanted by plasma immersion in Kapton, Mylar and polypropylene, with the objective of forming a diamond-like carbon layer on these polymers. The Raman spectrum of the implanted polypropylene showed typical Diamond-Like Carbon (DLC) graphite (G) and disorder (D) peaks, with an sp3/sp2 hybridization ratio of approximately 0.4 to 0.6. The XPS analysis of the three implanted polymers also showed peaks of C-C and N-C bonds in the sp3 configuration, with hybridization ratios in the same range as the Raman result. The implanted polymers were exposed to oxygen plasma to test the resistance of the polymers to oxygen degradation. Mass loss rate results, however, showed that the DLC layer formed is not sufficiently robust for this application. Nevertheless, the layer formed can be suitable for other applications such as in gas barriers in beverage containers. Further study of implantation conditions may improve the quality of the DLC layer.

XANES analyses of silicon crystalline irradiated by nitrogen/oxygen ions.

PubMed

Yoshida, T; Hara, T; Li, T; Yoshida, H; Tanabe, T

2001-03-01

X-ray absorption techniques have been applied to the characterization of 5 keV nitrogen / oxygen ions implanted silicon samples. The depth selective measurement of XANES by recording in PEY mode and the quantitative analysis by superposition of XANES spectra were carried out to elucidate the depth profile of implanted ions. It has been revealed that the silicon nitride phase were formed in silicon after prolonged N+ irradiation and it extended over the deep part of the damaged region from the surface. On the other hand, for the O+ irradiation, silicon dioxide phase were produced only in the shallow part of the damaged region, i.e., the silicon dioxide phase likely broke off during the irradiation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bandriyana,, E-mail: bandri@batan.go.id; Ismoyo, Agus Hadi; Dimyati, A.

Surface treatment by implantation with nitrogen-ion was performed on the commercial feritic high strength steel AISI 410 which is termed for high temperature applications. The aim of this research was focused on the surface modification to improve its high temperature oxidation property in the early stages. Ion implantation was carried out at acceleration energy of 100 KeV and ion current 10 mA for 30, 60 and 90 minutes. The samples were subjected to the high temperature oxidation test by means of thermogravimetry in a magnetic suspension balance (MSB) at 500 °C for 5 hours. The scanning electron microscopy (SEM), X-ray diffractionmore » spectrometry (XRD) and Vickers Hardness measurement were used for sample characterization. The formation of ferro-nitride phase after implantation did not occur, however a thin layer considered to contain nitrogen interstitials was detected. The oxidation of both samples before and after implantation followed parabolic kinetics indicating inward growth of oxide scale characteristically due to diffusion of oxygen anions towards matrix surface. After oxidation test relativelly stable oxide scales were observed. Oxidation rates decreased proportionally with the increasing of implantation time due to the formation of oxide layer which is considered to be effectiv inhibitor for the oxygen diffusion.« less

The influence of nitrogen ion implantation on the tribological properties of piston rings made of Hardox and Raex steels

NASA Astrophysics Data System (ADS)

Budzyński, P.; Kamiński, M.; Pyszniak, K.

2016-09-01

The implantation of nitrogen, carbon, and oxygen can be used for enhancing the tribological properties of critical components for internal combustion engines. Hardox and Raex steels have very similar strength parameters as for steel used for piston rings in internal combustion engines. An essential criterion when selecting material for the production of piston rings is a low friction factor and a low wear index. The aim of this study was to determine the extent to which these parameters can be enhanced by nitrogen ion implantation. Samples were implanted with nitrogen ions with 65 keV energy and the fluence of implanted ions set to 1.1017 N + /cm2. Friction and wear measurements were performed on a pin-on disc stand. The results demonstrate that implantation with nitrogen ions significantly reduces the friction factor and wear of Hardox 450 and Raex 400 steels. Implantation can and should be used for enhancing the tribological properties of steel used for friction elements in internal combustion engines, particularly when heat treatment is excluded. Final elements can be subjected to implantation, as the process does not change their dimensions.

Development of vertical compact ion implanter for gemstones applications

NASA Astrophysics Data System (ADS)

Intarasiri, S.; Wijaikhum, A.; Bootkul, D.; Suwannakachorn, D.; Tippawan, U.; Yu, L. D.; Singkarat, S.

2014-08-01

Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

Surface modification effects of fluorine-doped tin dioxide by oxygen plasma ion implantation

NASA Astrophysics Data System (ADS)

Tang, Peng; Liu, Cai; Zhang, Jingquan; Wu, Lili; Li, Wei; Feng, Lianghuan; Zeng, Guanggen; Wang, Wenwu

2018-04-01

SnO2:F (FTO), as a kind of transparent conductive oxide (TCO), exhibits excellent transmittance and conductivity and is widely used as transparency electrodes in solar cells. It's very important to modifying the surface of FTO for it plays a critical role in CdTe solar cells. In this study, modifying effects of oxygen plasma on FTO was investigated systematically. Oxygen plasma treatment on FTO surface with ion accelerating voltage ranged from 0.4 kV to 1.6 kV has been processed. The O proportion of surface was increased after ion implantation. The Fermi level of surface measurement by XPS valance band spectra was lowered as the ion accelerating voltage increased to 1.2 kV and then raised as accelerating voltage was elevated to 1.6 kV. The work function measured by Kelvin probe force microscopy increased after ion implanting, and it was consistent with the variation of Fermi level. The change of energy band structure of FTO surface mainly originated from the surface composition variation. As FTO conduction was primarily due to oxyanion hole, the carrier was electron and its concentration was reduced while O proportion was elevated at the surface of FTO, as a result, the Fermi level lowered and the work function was enlarged. It was proved that oxygen plasma treatment is an effective method to modulate the energy band structure of the surface as well as other properties of FTO, which provides much more space for interface and surface modification and then photoelectric device performance promotion.

Center for Thin Film Studies

DTIC Science & Technology

1988-10-31

techniques, and to investigate the simultaneous use of ion bombardment and substrate cooling for production of low-loss, stable ZnS material. 7 0.14 q(a) N...films indicate that even implanted argon is firmly embedded and shows no tendency to evolve. When the ions are reactive (e.g., oxygen or nitrogen ...oxygen ions can result in very good oxide layers. Nitrogen is another compound-forming gas which lacks sufficient reactivity to have been a useful

High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

NASA Astrophysics Data System (ADS)

Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

2018-03-01

The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

X-ray photoelectron study of Si+ ion implanted polymers

NASA Astrophysics Data System (ADS)

Tsvetkova, T.; Balabanov, S.; Bischoff, L.; Krastev, V.; Stefanov, P.; Avramova, I.

2010-11-01

X-ray photoelectron spectroscopy was used to characterize different polymer materials implanted with low energy Si+ ions (E=30 keV, D= 1.1017 cm-2). Two kinds of polymers were studied - ultra-high-molecular-weight poly-ethylene (UHMWPE), and poly-methyl-methacrylate (PMMA). The non-implanted polymer materials show the expected variety of chemical bonds: carbon-carbon, carbon being three- and fourfold coordinated, and carbon-oxygen in the case of PMMA samples. The X-ray photoelectron and Raman spectra show that Si+ ion implantation leads to the introduction of additional disorder in the polymer material. The X-ray photoelectron spectra of the implanted polymers show that, in addition to already mentioned bonds, silicon creates new bonds with the host elements - Si-C and Si-O, together with additional Si dangling bonds as revealed by the valence band study of the implanted polymer materials.

Buried oxide layer in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Surface modifications of AISI 420 stainless steel by low energy Yttrium ions

NASA Astrophysics Data System (ADS)

Nassisi, Vincenzo; Delle Side, Domenico; Turco, Vito; Martina, Luigi

2018-01-01

In this work, we study surface modifications of AISI 420 stainless steel specimens in order to improve their surface properties. Oxidation resistance and surface micro-hardness were analyzed. Using an ion beam delivered by a Laser Ion Source (LIS) coupled to an electrostatic accelerator, we performed implantation of low energy yttrium ions on the samples. The ions experienced an acceleration passing through a gap whose ends had a potential difference of 60 kV. The gap was placed immediately before the samples surface. The LIS produced high ions fluxes per laser pulse, up to 3x1011 ions/cm2, resulting in a total implanted flux of 7x1015 ions/cm2. The samples were characterized before and after ion implantation using two analytical techniques. They were also thermally treated to investigate the oxide scale. The crystal phases were identified by an X-ray diffractometer, while the micro-hardness was assayed using the scratch test and a profilometer. The first analysis was applied to blank, implanted and thermally treated sample surface, while the latter was applied only to blank and implanted sample surfaces. We found a slight increase in the hardness values and an increase to oxygen resistance. The implantation technique we used has the advantages, with respect to conventional methods, to modify the samples at low temperature avoiding stray diffusion of ions inside the substrate bulk.

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

NASA Astrophysics Data System (ADS)

Koga, Yoshihiro; Kadono, Takeshi; Shigematsu, Satoshi; Hirose, Ryo; Onaka-Masada, Ayumi; Okuyama, Ryousuke; Okuda, Hidehiko; Kurita, Kazunari

2018-06-01

We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 × 1016 atoms/cm2. This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.

Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jer-Chyi, E-mail: jcwang@mail.cgu.edu.tw; Chang, Wei-Cheng; Lai, Chao-Sung, E-mail: cslai@mail.cgu.edu.tw

Data retention characteristics of tungsten nanocrystal (W-NC) memory devices using an oxygen plasma immersion ion implantation (PIII) treatment are investigated. With an increase of oxygen PIII bias voltage and treatment time, the capacitance–voltage hysteresis memory window is increased but the data retention characteristics become degraded. High-resolution transmission electron microscopy images show that this poor data retention is a result of plasma damage on the tunneling oxide layer, which can be prevented by lowering the bias voltage to 7 kV. In addition, by using the elevated temperature retention measurement technique, the effective charge trapping level of the WO{sub 3} film surrounding themore » W-NCs can be extracted. This measurement reveals that a higher oxygen PIII bias voltage and treatment time induces more shallow traps within the WO{sub 3} film, degrading the retention behavior of the W-NC memory.« less

Studies of O18 impurity trapping at interstitial dislocation loops in ion implanted Fe (1 1 0) by ion channeling and ab initio calculations

NASA Astrophysics Data System (ADS)

Mathayan, Vairavel; Kothalamuthu, Saravanan; Gnanasekaran, Jaiganesh; Balakrishnan, Sundaravel; Panigrahi, Binaykumar

2018-01-01

The O18 and self ions are implanted at same depth in Fe (1 1 0) crystal and annealed to study the oxygen trapping under excess self interstitial defects. Rutherford backscattering spectrometry, nuclear reaction analysis and channeling measurements have been performed to determine the lattice site position of O18. The presence of dislocation loops is confirmed by energy-dependent dechanneling parameter measurements. From the tilt angular scans of Fe and O18 signals along 〈1 0 0〉, 〈1 1 0〉 axes, O18 is found to be displaced 0.2 Å from tetrahedral towards octahedral interstitial site in O18. Similar lattice site location of oxygen with the displacement of 0.37 Å is predicted by density functional theory calculations for the interaction of oxygen with 〈1 0 0〉 interstitial dislocation loop structure. Our results provide strong evidence on oxygen trapping at interstitial dislocation loops in the presence of excess interstitial defects in iron.

Fretting wear study of surface modified Ni-Ti shape memory alloy.

PubMed

Tan, L; Crone, W C; Sridharan, K

2002-05-01

A combination of shape memory characteristics, pseudoelasticity, and good damping properties make near-equiatomic nickel-titanium (Ni-Ti) alloy a desirable candidate material for certain biomedical device applications. The alloy has moderately good wear resistance, however, further improvements in this regard would be beneficial from the perspective of reducing wear debris generation, improving biocompatibility, and preventing failure during service. Fretting wear tests of Ni-Ti in both austenitic and martensitic microstructural conditions were performed with the goal of simulating wear which medical devices such as stents may experience during surgical implantation or service. The tests were performed using a stainless steel stylus counter-wearing surface under dry conditions and also with artificial plasma containing 80 g/L albumen protein as lubricant. Additionally, the research explores the feasibility of surface modification by sequential ion implantation with argon and oxygen to enhance the wear characteristics of the Ni-Ti alloy. Each of these implantations was performed to a dose of 3 x 10(17) atom/cm(2) and an energy of 50 kV, using the plasma source ion implantation process. Improvements in wear resistance were observed for the austenitic samples implanted with argon and oxygen. Ion implantation with argon also reduced the surface Ni content with respect to Ti due to differential sputtering rates of the two elements, an effect that points toward improved biocompatibility.

Plasma immersion ion implantation for reducing metal ion release

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diaz, C.; Garcia, J. A.; Maendl, S.

Plasma immersion ion implantation of Nitrogen and Oxygen on CoCrMo alloys was carried out to improve the tribological and corrosion behaviors of these biomedical alloys. In order to optimize the implantation results we were carried experiments at different temperatures. Tribocorrosion tests in bovine serum were used to measure Co, Cr and Mo releasing by using Inductively Coupled Plasma Mass Spectrometry analysis after tests. Also, X-ray Diffraction analysis were employed in order to explain any obtained difference in wear rate and corrosion tests. Wear tests reveals important decreases in rate of more than one order of magnitude for the best treatment.more » Moreover decreases in metal release were found for all the implanted samples, preserving the same corrosion resistance of the unimplanted samples. Finally this paper gathers an analysis, in terms of implantation parameters and achieved properties for industrial implementation of these treatments.« less

Method of forming buried oxide layers in silicon

DOEpatents

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Pressure-induced transformations of nitrogen implanted into silicon

NASA Astrophysics Data System (ADS)

Akhmetov, V. D.; Misiuk, A.; Barcz, A.; Richter, H.

2006-03-01

Czochralski (CZ) Si samples implanted with nitrogen, with doses 1017 ion/cm2 and 1018 ion/cm2, at 140 keV, were studied by means of Fourier transform infrared spectroscopy after annealing at 1130 °C/5 h under different hydrostatic pressures, from 1 bar to 10.7 kbar. It has been found for each pressure applied, that the increased nitrogen dose leads to transformation of the broadband spectra to the fine structure ones, corresponding to crystalline silicon nitride. The spectral position of observed sharp peaks in the investigated pressure region is red shifted in comparison to that for the peaks of crystalline silicon oxynitride found recently by other investigators in nitrogen-containing poly-Si as well as in a residual melt of nitrogen-doped CZ-Si. The application of the pressure during annealing results in further red shift of the nitrogen-related bands. The observed decrease of frequency of vibrational bands is explained in terms of the pressure induced lowered incorporation of oxygen into growing oxynitride phase. Secondary ion mass spectrometry data reveal the decrease of oxygen content in implanted layer with increasing pressure during annealing.

Study of silicon doped with zinc ions and annealed in oxygen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Privezentsev, V. V., E-mail: v.privezentsev@mail.ru; Kirilenko, E. P.; Goryachev, A. N.

2017-02-15

The results of studies of the surface layer of silicon and the formation of precipitates in Czochralski n-Si (100) samples implanted with {sup 64}Zn{sup +} ions with an energy of 50 keV and a dose of 5 × 10{sup 16} cm{sup –2} at room temperature and then oxidized at temperatures from 400 to 900°C are reported. The surface is visualized using an electron microscope, while visualization of the surface layer is conducted via profiling in depth by elemental mapping using Auger electron spectroscopy. The distribution of impurity ions in silicon is analyzed using a time-of-flight secondary-ion mass spectrometer. Using X-raymore » photoelectron spectroscopy, the chemical state of atoms of the silicon matrix and zinc and oxygen impurity atoms is studied, and the phase composition of the implanted and annealed samples is refined. After the implantation of zinc, two maxima of the zinc concentration, one at the wafer surface and the other at a depth of 70 nm, are observed. In this case, nanoparticles of the Zn metal phase and ZnO phase, about 10 nm in dimensions, are formed at the surface and in the surface layer. After annealing in oxygen, the ZnO · Zn{sub 2}SiO{sub 4} and Zn · ZnO phases are detected near the surface and at a depth of 50 nm, respectively.« less

A Program of Research on Microfabrication Techniques for VLSI Magnetic Devices.

DTIC Science & Technology

1982-11-30

epitaxial ( LPE ) garnet films have been investigated by transmission electron microscopy B. A special technique involving physical polishing and ion milling...was used for producing ultra-thin cross-sections of the LPE garnet films . To our knowledge no one else has such capabilities. It was found that the...Materials and the Effects of Ion Implantation on them 3 2.1 The Effects of Deuterium and Oxygen Implantation on the Magnetic 3 Parameters of Garnet Films 2.2

Vacancy identification in Co+ doped rutile TiO2 crystal with positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Qin, X. B.; Zhang, P.; Liang, L. H.; Zhao, B. Z.; Yu, R. S.; Wang, B. Y.; Wu, W. M.

2011-01-01

Co-doped rutile TiO2 films were synthesized by ion implantation. Variable energy positron annihilation Doppler broadening spectroscopy and coincidence Doppler broadening measurements were performed for identification of the vacancies. A newly formed type of vacancy can be concluded by the S-W plot and the CDB results indicated that the oxygen vacancy (VO) complex Ti-Co-VO and/or Ti-VO are formed with Co ions implantation and the vacancy concentration is increased with increase of dopant dose.

Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories

NASA Astrophysics Data System (ADS)

Bonafos, C.; Benassayag, G.; Cours, R.; Pécassou, B.; Guenery, P. V.; Baboux, N.; Militaru, L.; Souifi, A.; Cossec, E.; Hamga, K.; Ecoffey, S.; Drouin, D.

2018-01-01

We report on the direct ion beam synthesis of a delta-layer of indium oxide nanocrystals (In2O3-NCs) in silica matrices by using ultra-low energy ion implantation. The formation of the indium oxide phase can be explained by (i) the affinity of indium with oxygen, (ii) the generation of a high excess of oxygen recoils generated by the implantation process in the region where the nanocrystals are formed and (iii) the proximity of the indium-based nanoparticles with the free surface and oxidation from the air. Taking advantage of the selective diffusivity of implanted indium in SiO2 with respect to Si3N4, In2O3-NCs have been inserted in the SiO2 switching oxide of micrometric planar oxide-based resistive random access memory (OxRAM) devices fabricated using the nanodamascene process. Preliminary electrical measurements show switch voltage from high to low resistance state. The devices with In2O3-NCs have been cycled 5 times with identical operating voltages and RESET current meanwhile no switch has been observed for non implanted devices. This first measurement of switching is very promising for the concept of In2O3-NCs based OxRAM memories.

Structural and optical properties of DC magnetron sputtered ZnO films on glass substrate and their modification by Ag ions implantation

NASA Astrophysics Data System (ADS)

Ahmad, R.; Afzal, Naveed; Amjad, U.; Jabbar, S.; Hussain, T.; Hussnain, A.

2017-07-01

This work is focused on investigating the effects of deposition time and Ag ions implantation on structural and optical properties of ZnO film. The ZnO film was prepared on glass substrate by pulsed DC magnetron sputtering of pure Zn target in reactive oxygen environment for 2 h, 3 h, 4 h and 5 h respectively. X-ray diffraction results revealed polycrystalline ZnO film whose crystallinity was improved with increase of the deposition time. The morphological features indicated agglomeration of smaller grains into larger ones by increasing the deposition time. The UV-vis spectroscopy analysis depicted a small decrease in the band gap of ZnO from 3.36 eV to 3.27 eV with increase of deposition time. The Ag ions implantation in ZnO films deposited for 5 h on glass was carried out by using Pelletron Accelerator at different ions fluences ranging from 1  ×  1011 ions cm-2 to 2  ×  1012 ions cm-2. XRD patterns of Ag ions implanted ZnO did not show significant change in crystallite size by increasing ions fluence from 1  ×  1011 ions cm-2 to 5  ×  1011 ions cm-2. However, with further increase of the ions fluence, the crystallite size was decreased. The band gap of Ag ions implanted ZnO indicated anomalous variations with increase of the ions fluence.

Excess oxygen limited diffusion and precipitation of iron in amorphous silicon dioxide

NASA Astrophysics Data System (ADS)

Leveneur, J.; Langlois, M.; Kennedy, J.; Metson, James B.

2017-10-01

In micro- and nano- electronic device fabrication, and particularly 3D designs, the diffusion of a metal into sublayers during annealing needs to be minimized as it is usually detrimental to device performance. Diffusion also causes the formation and growth of nanoprecipitates in solid matrices. In this paper, the diffusion behavior of low energy, low fluence, ion implanted iron into a thermally grown silicon oxide layer on silicon is investigated. Different ion beam analysis and imaging techniques were used. Magnetization measurements were also undertaken to provide evidence of nanocrystalline ordering. While standard vacuum furnace annealing and electron beam annealing lead to fast diffusion of the implanted species towards the Si/SiO2 interface, we show that furnace annealing in an oxygen rich atmosphere prevents the diffusion of iron that, in turn, limits the growth of the nanoparticles. The diffusion and particle growth is also greatly reduced when oxygen atoms are implanted in the SiO2 prior to Fe implantation, effectively acting as a diffusion barrier. The excess oxygen is hypothesized to trap Fe atoms and reduce their mean free path during the diffusion. Monte-Carlo simulations of the diffusion process which consider the random walk of Fe, Fick's diffusion of O atoms, Fe precipitation, and desorption of the SiO2 layer under the electron beam annealing were performed. Simulation results for the three preparation conditions are found in good agreement with the experimental data.

P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

NASA Astrophysics Data System (ADS)

Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

2016-12-01

Single-crystalline ZnO films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy technique. The films have been implanted with fixed fluence of 120 keV N and 130 keV O ions at 460 °C. Hall measurements show that the dually-implanted single-crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 2.1 × 1018-1.1 × 1019 cm-3, hole mobilities between 1.6 and 1.9 cm2 V-1 s-1, and resistivities in the range of 0.353-1.555 Ω cm. The ZnO films exhibit (002) (c-plane) orientation as identified by the X-ray diffraction pattern. It is confirmed that N ions were effectively implanted by SIMS results. Raman spectra, polarized Raman spectra, and X-ray photoelectron spectroscopy results reflect that the concentration of oxygen vacancies is reduced, which is attributed to O ion implantation. It is concluded that N and O implantation and dynamic annealing play a critical role in forming p-type single-crystalline ZnO films.

Multiband semiconductor compositions for photovoltaic devices

DOEpatents

Walukiewicz, Wladyslaw; Yu, Kin Man; Wu, Junqiao

2010-05-04

The highly mismatched alloy Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x, 0.ltoreq.y<1 and 0

Multiband semiconductor compositions for photovoltaic devices

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA; Wu, Junqiao [Belmont, MA

2012-03-06

The highly mismatched alloy Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x, 0.ltoreq.y<1 and 0

Effect of nitrogen ion implantation on the structural and optical properties of indium oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sethi, Riti; Aziz, Anver; Siddiqui, Azher M., E-mail: amsiddiqui@jmi.ac.in

2016-06-10

: We report here synthesis and subsequent nitrogen ion implantation of indium oxide (In{sub 2}O{sub 3}) thin films. The films were implanted with 25 keV N{sup +} beam for different ion doses between 3E15 to 1E16 ions/cm{sup 2}. The resulting changes in structural and optical properties were investigated using XRD, SEM-EDAX and UV-Vis Spectrometry. XRD studies reveal decrease in crystallite size from 20.06 to 12.42 nm with increase in ion dose. SEM micrographs show an increase in the grain size from 0.8 to 1.35 µm with increase in ion dose because of the agglomeration of the grains. Also, from EDAXmore » data on pristine and N-implanted thin films the presence of indium and oxygen without any traces of impurity elements could be seen. However, at lower ion doses such as 3E15 and 5E15 ions/cm{sup 2}, no evidence of the presence of nitrogen ion was seen. However, for the ion dose of 1E16 ions/cm{sup 2}, evidence of presence of nitrogen can be seen in the EDAX data. Band gap calculations reveal a decrease in band gap from 3.54 to 3.38 eV with increasing ion dose. However, the band gap was found to again show an increase to 3.58 eV at the highest ion dose owing to quantum confinement effect.« less

Oxygen-implanted induced formation of oxide layer enhances blood compatibility on titanium for biomedical applications.

PubMed

Hung, Wei-Chiang; Chang, Fang-Mo; Yang, Tzu-Sen; Ou, Keng-Liang; Lin, Che-Tong; Peng, Pei-Wen

2016-11-01

Titanium dioxide (TiO2) layers were prepared on a Ti substrate by using oxygen plasma immersion ion implantation (oxygen PIII). The surface chemical states, structure, and morphology of the layers were studied using X-ray photoelectron spectroscopy, X-ray diffraction, Raman microscopy, atomic force microscopy and scanning electron microscope. The mechanical properties, such as the Young's modulus and hardness, of the layers were investigated using nanoindentation testing. The Ti(4+) chemical state was determined to be present on oxygen-PIII-treated surfaces, which consisted of nanocrystalline TiO2 with a rutile structure. Compared with Ti substrates, the oxygen-PIII-treated surfaces exhibited decreased Young's moduli and hardness. Parameters indicating the blood compatibility of the oxygen-PIII-treated surfaces, including the clotting time and platelet adhesion and activation, were studied in vitro. Clotting time assays indicated that the clotting time of oxygen-PIII-treated surfaces was longer than that of the Ti substrate, which was associated with decreased fibrinogen adsorption. In conclusion, the surface characteristics and the blood compatibility of Ti implants can be modified and improved using oxygen PIII. Copyright © 2016 Elsevier B.V. All rights reserved.

Nano-size metallic oxide particle synthesis in Fe-Cr alloys by ion implantation

NASA Astrophysics Data System (ADS)

Zheng, C.; Gentils, A.; Ribis, J.; Borodin, V. A.; Delauche, L.; Arnal, B.

2017-10-01

Oxide Dispersion Strengthened (ODS) steels reinforced with metal oxide nanoparticles are advanced structural materials for nuclear and thermonuclear reactors. The understanding of the mechanisms involved in the precipitation of nano-oxides can help in improving mechanical properties of ODS steels, with a strong impact for their commercialization. A perfect tool to study these mechanisms is ion implantation, where various precipitate synthesis parameters are under control. In the framework of this approach, high-purity Fe-10Cr alloy samples were consecutively implanted with Al and O ions at room temperature and demonstrated a number of unexpected features. For example, oxide particles of a few nm in diameter could be identified in the samples already after ion implantation at room temperature. This is very unusual for ion beam synthesis, which commonly requires post-implantation high-temperature annealing to launch precipitation. The observed particles were composed of aluminium and oxygen, but additionally contained one of the matrix elements (chromium). The crystal structure of aluminium oxide compound corresponds to non-equilibrium cubic γ-Al2O3 phase rather than to more common corundum. The obtained experimental results together with the existing literature data give insight into the physical mechanisms involved in the precipitation of nano-oxides in ODS alloys.

Determination of diffusing species from marker experiments in the system Ni Ti O

NASA Astrophysics Data System (ADS)

Schirmer, S.; Lindner, J. K. N.; Mändl, S.

2007-04-01

Surface modification of NiTi for improved biocompatibility is a pressing issue. Using oxygen plasma immersion ion implantation (PIII), it is possible to form closed TiO2 layers on NiTi3 on NiTi. Using 60Ni marker ions implanted at 180 keV, it is shown conclusively that mobile Ni are the diffusing species, with the onset of diffusion occurring between 300 and 400 °C. Additionally, Ni is selectively removed from the oxide by preferential sputtering from the surface.

Gettering of Residual Impurities by Ion Implantation Damage in Poly-AlN UV Diode Detectors

NASA Astrophysics Data System (ADS)

Khan, A. H.; Stacy, T.; Meese, J. M.

1996-03-01

UV diode detectors have been fabricated from oriented polycrystalline AlN grown on (111) n-type 3-15Ω-cm Si substrates by CVD using AlCl3 and ammonia with a hydrogen carrier gas at 760-800C, 40-45 torr and gas flow rates of 350, 120, and 120 sccm for hydrogen, ammonia and hydrogen over heated AlCl_3. Half of the AlN film of thickness 1.5-2.0 microns was masked off prior to ion implantation. Samples were ion-implanted at 5 kV with methane, nitrogen and argon to a dose of 5-6 x 10^18 ions/cm^2. The AlN was contacted with sputtered Au while the Si was contacted with evaporated Al. No annealing was performed. Rectification was obtained as a result of radiation damage in the AlN. SIMs analysis showed a reduction of oxygen, hydrogen, chlorine and carbon by several orders of magnitude and to a depth of several microns in the ion implanted samples compared to the masked samples. The quantum efficiency was 16nm uncorrected for reflection from the AlN and thin metal contact.

Heavy Ion Formation in Titan's Ionosphere: Magnetospheric Introduction of Free Oxygen and a Source of Titan's Aerosols?

NASA Technical Reports Server (NTRS)

Sittler, E. C., Jr.; Ali, A.; Cooper, J. F.; Hartle, R. E.; Johnson, R. E.; Coates, A. J.; Young, D. T.

2009-01-01

Discovery by Cassini's plasma instrument of heavy positive and negative ions within Titan's upper atmosphere and ionosphere has advanced our understanding of ion neutral chemistry within Titan's upper atmosphere, primarily composed of molecular nitrogen, with approx.2.5% methane. The external energy flux transforms Titan's upper atmosphere and ionosphere into a medium rich in complex hydrocarbons, nitriles and haze particles extending from the surface to 1200 km altitudes. The energy sources are solar UV, solar X-rays, Saturn's magnetospheric ions and electrons, solar wind and shocked magnetosheath ions and electrons, galactic cosmic rays (CCR) and the ablation of incident meteoritic dust from Enceladus' E-ring and interplanetary medium. Here it is proposed that the heavy atmospheric ions detected in situ by Cassini for heights >950 km, are the likely seed particles for aerosols detected by the Huygens probe for altitudes <100km. These seed particles may be in the form of polycyclic aromatic hydrocarbons (PAH) containing both carbon and hydrogen atoms CnHx. There could also be hollow shells of carbon atoms, such as C60, called fullerenes which contain no hydrogen. The fullerenes may compose a significant fraction of the seed particles with PAHs contributing the rest. As shown by Cassini, the upper atmosphere is bombarded by magnetospheric plasma composed of protons, H(2+) and water group ions. The latter provide keV oxygen, hydroxyl and water ions to Titan's upper atmosphere and can become trapped within the fullerene molecules and ions. Pickup keV N(2+), N(+) and CH(4+) can also be implanted inside of fullerenes. Attachment of oxygen ions to PAH molecules is uncertain, but following thermalization O(+) can interact with abundant CH4 contributing to the CO and CO2 observed in Titan's atmosphere. If an exogenic keV O(+) ion is implanted into the haze particles, it could become free oxygen within those aerosols that eventually fall onto Titan's surface. The process of freeing oxygen within aerosols could be driven by cosmic ray interactions with aerosols at all heights. This process could drive pre-biotic chemistry within the descending aerosols. Cosmic ray interactions with grains at the surface, including water frost depositing on grains from cryovolcanism, would further add to abundance of trapped free oxygen. Pre-biotic chemistry could arise within surface microcosms of the composite organic-ice grains, in part driven by free oxygen in the presence of organics and any heat sources, thereby raising the astrobiological potential for microscopic equivalents of Darwin's "warm ponds" on Titan.

Corrosion resistance and blood compatibility of lanthanum ion implanted pure iron by MEVVA

NASA Astrophysics Data System (ADS)

Zhu, Shengfa; Huang, Nan; Shu, Hui; Wu, Yanping; Xu, Li

2009-10-01

Pure iron is a potential material applying for coronary artery stents based on its biocorrodible and nontoxic properties. However, the degradation characteristics of pure iron in vivo could reduce the mechanical stability of iron stents prematurely. The purpose of this work was to implant the lanthanum ion into pure iron specimens by metal vapor vacuum arc (MEVVA) source at an extracted voltage of 40 kV to improve its corrosion resistance and biocompatibility. The implanted fluence was up to 5 × 10 17 ions/cm 2. The X-ray photoelectron spectroscopy (XPS) was used to characterize the chemical state and depth profiles of La, Fe and O elements. The results showed lanthanum existed in the +3 oxidation state in the surface layer, most of the oxygen combined with lanthanum and form a layer of oxides. The lanthanum ion implantation layer could effectively hold back iron ions into the immersed solution and obviously improved the corrosion resistance of pure iron in simulated body fluids (SBF) solution by the electrochemical measurements and static immersion tests. The systematic evaluation of blood compatibility, including in vitro platelets adhesion, prothrombin time (PT), thrombin time (TT), indicated that the number of platelets adhesion, activation, aggregation and pseudopodium on the surface of the La-implanted samples were remarkably decreased compared with pure iron and 316L stainless steel, the PT and TT were almost the same as the original plasma. It was obviously showed that lanthanum ion implantation could effectively improve the corrosion resistance and blood compatibility of pure iron.

An origin of orange (2 eV) photoluminescence in SiO{sub 2} films implanted with high Si{sup +}-ion doses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tyschenko, I. E., E-mail: tys@isp.nsc.ru

2015-09-15

The photoluminescence and photoluminescence excitation spectra of SiO{sub 2} films implanted with high (3 at %) Si{sup +}-ion doses are studied in relation to the temperature of postimplantation annealing. It is shown that two photoluminescence bands with peaks at 2.7 and 2 eV are dominant in the spectra. As the annealing temperature is increased, the relation between the intensities of the 2.7 and 2 eV bands changes in favor of the former one. Both of the photoluminescence bands have their main excitation peak at the energy 5.1 eV. The excitation spectrum of the ∼2-eV band exhibits also peaks at 3.8more » and 4.6 eV. It is concluded that, in the implanted SiO{sub 2} films, the orange photoluminescence band originates from radiative transitions between levels of centers associated with a deficiency of oxygen (≡Si–Si≡ or =Si:) and the levels of nonbridging oxygen (≡Si–O•)« less

Elementary surface processes during reactive magnetron sputtering of chromium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monje, Sascha; Corbella, Carles, E-mail: carles.corbella@rub.de; Keudell, Achim von

2015-10-07

The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidationmore » sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.« less

Ion-enhanced oxidation of aluminum as a fundamental surface process during target poisoning in reactive magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuschel, Thomas; Keudell, Achim von

2010-05-15

Plasma deposition of aluminum oxide by reactive magnetron sputtering (RMS) using an aluminum target and argon and oxygen as working gases is an important technological process. The undesired oxidation of the target itself, however, causes the so-called target poisoning, which leads to strong hysteresis effects during RMS operation. The oxidation occurs by chemisorption of oxygen atoms and molecules with a simultaneous ion bombardment being present. This heterogenous surface reaction is studied in a quantified particle beam experiment employing beams of oxygen molecules and argon ions impinging onto an aluminum-coated quartz microbalance. The oxidation and/or sputtering rates are measured with thismore » microbalance and the resulting oxide layers are analyzed by x-ray photoelectron spectroscopy. The sticking coefficient of oxygen molecules is determined to 0.015 in the zero coverage limit. The sputtering yields of pure aluminum by argon ions are determined to 0.4, 0.62, and 0.8 at 200, 300, and 400 eV. The variation in the effective sticking coefficient and sputtering yield during the combined impact of argon ions and oxygen molecules is modeled with a set of rate equations. A good agreement is achieved if one postulates an ion-induced surface activation process, which facilitates oxygen chemisorption. This process may be identified with knock-on implantation of surface-bonded oxygen, with an electric-field-driven in-diffusion of oxygen or with an ion-enhanced surface activation process. Based on these fundamental processes, a robust set of balance equations is proposed to describe target poisoning effects in RMS.« less

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Mehta, S.; Swartz, C. K.

1984-01-01

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implantation and the resuitant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacanies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Zinc-ion implanted and deposited titanium surfaces reduce adhesion of Streptococccus mutans

NASA Astrophysics Data System (ADS)

Xu, Juan; Ding, Gang; Li, Jinlu; Yang, Shenhui; Fang, Bisong; Sun, Hongchen; Zhou, Yanmin

2010-10-01

While titanium (Ti) is a commonly used dental implant material with advantageous biocompatible and mechanical properties, native Ti surfaces do not have the ability to prevent bacterial colonization. The objective of this study was to evaluate the chemical composition and bacterial adhesive properties of zinc (Zn) ion implanted and deposited Ti surfaces (Zn-PIIID-Ti) as potential dental implant materials. Surfaces of pure Ti (cp-Ti) were modified with increasing concentrations of Zn using plasma immersion ion implantation and deposition (PIIID), and elemental surface compositions were characterized by X-ray photoelectron spectrometry (XPS). To evaluate bacterial responses, Streptococcus mutans were seeded onto the modifiedTi surfaces for 48 h and subsequently observed by scanning electron microscopy. Relative numbers of bacteria on each surface were assessed by collecting the adhered bacteria, reculturing and counting colony forming units after 48 h on bacterial grade plates. Ti, oxygen and carbon elements were detected on all surfaces by XPS. Increased Zn signals were detected on Zn-PIIID-Ti surfaces, correlating with an increase of Zn-deposition time. Substantial numbers of S. mutans adhered to cp-Ti samples, whereas bacterial adhesion on Zn-PIIID-Ti surfaces signficantly decreased as the Zn concentration increased ( p < 0.01). In conclusion, PIIID can successfully introduce Zn onto a Ti surface, forming a modified surface layer bearing Zn ions that consequently deter adhesion of S. mutans, a common bacterium in the oral environment.

Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

NASA Astrophysics Data System (ADS)

Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

2015-10-01

Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

Modification of molybdenum surface by low-energy oxygen implantation at room temperature

NASA Astrophysics Data System (ADS)

Kavre Piltaver, Ivna; Jelovica Badovinac, Ivana; Peter, Robert; Saric, Iva; Petravic, Mladen

2017-12-01

We have studied the initial stages of oxide formation on molybdenum surfaces under 1 keV O2+ ion bombardment at room temperature (RT), using x-ray photoelectron spectroscopy around Mo 3d or O 1s core-levels and the valence band photoemission. The results are compared with the oxidation mechanism of thermally oxidized Mo at RT. The thermal oxidation reveals the formation of a very thin MoO2 layer that prevents any further adsorption of oxygen at higher oxygen doses. Oxygen implantation is more efficient in creating thicker oxide films with the simultaneous formation of several oxide compounds. The oxidation rates of MoO2 and Mo2O5 follow the parabolic growth rate consistent with the mass transport driven by diffusion of either neutral or singly and doubly charged oxygen interstitials. The oxidation of MoO3, which occurs at a later oxidation stage, follows the logarithmic rate driven by the diffusion of cations in an electric field.

Method of making silicon on insalator material using oxygen implantation

DOEpatents

Hite, Larry R.; Houston, Ted; Matloubian, Mishel

1989-01-01

The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

Recharging processes, radiation induced strain and changes of OH - bands under H + ion implantation in Ti doped lithium niobate

NASA Astrophysics Data System (ADS)

Kumar, P.; Moorthy Babu, S.; Bhaumik, I.; Ganesamoorthy, S.; Karnal, A. K.; Kumar, Praveen; Rodrigues, G. O.; Sulania, I.; Kanjilal, D.; Pandey, A. K.; Raman, R.

2010-01-01

A systematic analysis of variations in structural and optical characteristics of Z-cut plates of titanium doped congruent lithium niobate single crystals implanted with 120 keV proton beam at various fluences of 10 15, 10 16 and 10 17 protons/cm 2 is presented. Through, high resolution X-ray diffraction, atomic force microscopy, Fourier transform infrared and UV-visible-NIR analysis of congruent lithium niobate, the correlation of properties before and after implantation are discussed. HRXRD (0 0 6) reflection by Triple Crystal Mode shows that both tensile and compressive strain peak are produced by the high fluence implantation. A distinct tensile peak was observed from implanted region for a fluence of 10 16 protons/cm 2. AFM micrographs indicate mountain ridges, bumps and protrusions on target surface on implantation. UV-visible-NIR spectra reveal an increase in charge transfer between Ti 3+/Ti 4+ and ligand oxygen for implantation with 10 15 protons/cm 2, while spectra for higher fluence implanted samples show complex absorption band in the region from 380-1100 nm. Variations of OH - stretching vibration mode were observed for cLN Pure, cLNT2% virgin, and implanted samples with FTIR spectra. The concentration of OH - ion before and after implantation was calculated from integral absorption intensity. The effect of 120 keV proton implantation induced structural, surface and optical studies were correlated.

The local structure and ferromagnetism in Fe-implanted SrTiO3 single crystals

NASA Astrophysics Data System (ADS)

Lobacheva, O.; Chavarha, M.; Yiu, Y. M.; Sham, T. K.; Goncharova, L. V.

2014-07-01

We report a connection between the local structure of low-level Fe impurities and vacancies as the cause of ferromagnetic behavior observed in strontium titanate single crystals (STO), which were implanted with Fe and Si ions at different doses then annealed in oxygen. The effects of Fe doping and post-implantation annealing of STO were studied by X-ray Absorption Near Edge Structure (XANES) spectroscopy and Superconducting Quantum Interference Device magnetometry. XANES spectra for Fe and Ti K- and L-edge reveal the changes in the local environment of Fe and Ti following the implantation and annealing steps. The annealing in oxygen atmosphere partially healed implantation damages and changed the oxidation state of the implanted iron from metallic Fe0 to Fe2+/Fe3+ oxide. The STO single crystals were weak ferromagnets prior to implantation. The maximum saturation moment was obtained after our highest implantation dose of 2 × 1016 Fe atom/cm2, which could be correlated with the metallic Fe0 phases in addition to the presence of O/Ti vacancies. After recrystallization annealing, the ferromagnetic response disappears. Iron oxide phases with Fe2+ and Fe3+ corresponding to this regime were identified and confirmed by calculations using Real Space Multiple Scattering program (FEFF9).

Annealing Behavior of 57Fe Implanted in ZrO2(Y)

NASA Astrophysics Data System (ADS)

Zhang, G. L.; Yu, F. H.; Weng, H. M.; Zhang, H. H.

1998-12-01

Using conversion electron Mossbauer spectroscopy(CEMS) and slow positron beam, the chemical states of the implanted 57Fe (100KeV,3 × 10 16 ions/cm 2) in ZrO2 containing 3 mol% Y 2O 3( ZY 3) and its thermodynamic behavior during annealing process with the temperature from 200 to 500°C were studied. After annealing at 400°C the complex of Fe3+-V has been mostly dissolved, and the prior phase to α-Fe and α-Fe nano-crystalline cluster were present in the sample. Meanwhile the mixed conducting of oxygen-ions and electrons in the ZY3 containing Fe sample appeared.

Processing of silicon solar cells by ion implantation and laser annealing

NASA Technical Reports Server (NTRS)

Minnucci, J. A.; Matthei, K. W.; Greenwald, A. C.

1981-01-01

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Plasma ion implantation technology at Hughes Research Laboratories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matossian, J.N.

1994-03-01

The plasma ion implantation (PII) project at Hughes Research Laboratories (HRL) has as its main objective the evaluation and application of PII technology to improve the tribological properties of metal and nonmetal materials used in aerospace, defense, and commercial applications. The HRL PII facility consists of a 4-ft-diam[times]8-ft-long vacuum chamber capable of implanting objects weighing up to 7000 lbs, and a high-power (100-kW), high-voltage (100-kV) pulse modulator to provide voltage pulses for implantation. Advanced plasma sources have been developed to produce atomic, as well as molecular, nitrogen and oxygen ions, and PII processes have been developed to treat metal andmore » nonmetal materials. The HRL PII facility has been operational since 1989 and has been used for prototype demonstrations of PII technology to achieve (1) a 2--3[times] improved wear life of Co/WC drill bits used for printed-wiring-board fabrication, (2) an 8[times] reduced wear rate for TiN-coated cutting tools, and (3) a 2[times] increased surface hardness for a 7000-lb polymer object, 3 ft by 5 ft by 1 ft.« less

Erbium ion implantation into different crystallographic cuts of lithium niobate

NASA Astrophysics Data System (ADS)

Nekvindova, P.; Svecova, B.; Cajzl, J.; Mackova, A.; Malinsky, P.; Oswald, J.; Kolistsch, A.; Spirkova, J.

2012-02-01

Single crystals like lithium niobate are frequently doped with optically active rare-earth or transition-metal ions for a variety of applications in optical devices such as solid-state lasers, amplifiers or sensors. To exploit the potential of the Er:LiNbO 3, one must ensure high intensity of the 1.5 μm luminescence as an inevitable prerequisite. One of the important factors influencing the luminescence properties of a lasing ion is the crystal field of the surrounding, which is inevitably determined by the crystal structure of the pertinent material. From that point it is clear that it cannot be easy to affect the resulting luminescence properties - intensity or position of the luminescence band - without changing the structure of the substrate. However, there is a possibility to utilise a potential of the ion implantation of the lasing ions, optionally accompanied with a sensitising one, that can, besides the doping, also modify the structure of the treated area od the crystal. This effect can be eventually enhanced by a post-implantation annealing that may help to recover the damaged structure and hence to improve the desired luminescence. In this paper we are going to report on our experiments with ion-implantation technique followed with subsequent annealing could be a useful way to influence the crystal field of LN. Optically active Er:LiNbO 3 layers were fabricated by medium energy implantation under various experimental conditions. The Er + ions were implanted at energies of 330 and 500 keV with fluences ranging from 1.0 × 10 15 to 1.0 × 10 16 ion cm -2 into LiNbO 3 single-crystal cuts of both common and special orientations. The as-implanted samples were annealed in air and oxygen at two different temperatures (350 and 600 °C) for 5 h. The depth concentration profiles of the implanted erbium were measured by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He + ions. The photoluminescence spectra of the samples were measured to determine the emission of 1.5 μm. It has been shown that the projected range Rp of the implanted erbium depends on the beam energies of implantation. The concentration of the implanted erbium corresponds well with the fluence and is similar in all of the cuts of lithium niobate used. What was different were the intensities of the 1.5 μm luminescence bands not only before and after the annealing but also in various types of the crystal cuts. The cut perpendicular to the cleavage plane <10-14> exhibited the best luminescence properties for all of the experimental conditions used. In order to study the damage introduced by the implantation process, the influence of the annealing procedure on the recovery of the host lattice was examined by RBS/channelling. The RBS/channelling method serves to determine the disorder density in the as-implanted surface layer.

Temperature-dependent phosphorous dopant activation in ZnO thin film deposited using plasma immersion ion implantation

NASA Astrophysics Data System (ADS)

Murkute, Punam; Ghadi, Hemant; Saha, Shantanu; Chavan, Vinayak; Chakrabarti, Subhananda

2018-03-01

High band gap (3.34 eV) and large exciton binding energy (60 meV) at room temperature facilitates ZnO as a useful candidate for optoelectronics devices. Presence of zinc interstitial and oxygen vacancies results in n-type ZnO film. Phosphorus implantation was carried out using plasma immersion ion implantation technique (2kV, 900W) for constant duration (50 s) on RF sputtered ZnO thin films (Sample A). For dopant activation, sample A was subjected to Rapid Thermal Annealing (RTA) at 700, 800, 900 and 1000°C for 10 s in Oxygen ambient (Sample B, C, D, E). Low temperature (18 K) photoluminescence measurement demonstrated strong donor bound exciton peak for sample A. Dominant donor to acceptor pair peak (DAP) was observed for sample D at around 3.22 eV with linewidth of 131.3 meV. High resolution x-ray diffraction measurement demonstrated (001) and (002) peaks for sample A. (002) peak with high intensity was observed from all annealed samples. Incorporation of phosphorus in ZnO films leads to peak shift towards higher 2θ angle indicate tensile strain in implanted samples. Scanning electron microscopy images reveals improvement in grain size distribution along with reduction of implantation related defects. Raman spectra measured A1(LO) peak at around 576 cm-1 for sample A. Low intensity E2 (high) peak was observed for sample D indicating formation of (PZn+2VZn) complexes. From room temperature Hall measurement, sample D measured 1.17 x 1018 cm -3 carrier concentration with low resistivity of 0.464 Ω.

Preparation of a bonelike apatite-polymer fiber composite using a simple biomimetic process.

PubMed

Yokoyama, Yoshiro; Oyane, Ayako; Ito, Atsuo

2008-08-01

A bonelike apatite-polymer fiber composite may be useful as an implant material to replace bone, the enthesis of a tendon, and the joint part of a ligament. We treated an ethylene-vinyl alcohol copolymer (EVOH) plate and knitted EVOH fibers with an oxygen plasma to produce oxygen-containing functional groups on their surfaces. The plasma-treated samples were alternately dipped in alcoholic calcium and phosphate ion solutions three times to deposit apatite precursors onto their surfaces. The surface-modified samples formed a dense and uniform bonelike surface apatite layer after immersion for 24 h in a simulated body fluid with ion concentrations approximately equal to those of human blood plasma. The adhesive strength between the apatite layer and the sample's surface increased with increasing power density of the oxygen plasma. The apatite-EVOH fiber composite obtained by our process has similarities to natural bone in that apatite crystals are deposited on organic polymer fibers. The resulting composite would possess osteoconductivity due to the apatite phase. With proper polymer selection and optimized synthesis techniques, a composite could be made that would have bonelike mechanical properties. Hence, the present surface modification and coating process would be a promising route to obtain new implant materials with bonelike mechanical properties and osteoconductivity. (c) 2007 Wiley Periodicals, Inc.

Method of forming thermally stable high-resistivity regions in n-type indium phosphide by oxygen implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thompson, P.E.; Dietrich, H.B.

1985-12-12

Objects of this invention are: to form high-temperature stable isolation regions in InP; to provide InP wafers that allow greater flexibility in the design and fabrication of discrete devices; to provide new and improved InP semiconductor devices in n-type InP; to provide high-resisitivity isolation regions in InP; to extend the usefulness of damage-induced isolation in n-type InP by making possible processes in which the isolation implantation precedes the alloying of ohmic contacts; and to provide n-type InP substrates without unwanted conductive layers. The above and other object are realized by an InP wafer comprising a S.I. InP substrate; a n-typemore » InP active layer disposed on the substrate; and oxygen ion implanted isolation regions disposed in the active layer. The S.I. InP dopant may comprise either Fe or Cr.« less

Effect of time varying phosphorus implantation on optoelectronics properties of RF sputtered ZnO thin-films

NASA Astrophysics Data System (ADS)

Murkute, Punam; Ghadi, Hemant; Saha, Shantanu; Chavan, Vinayak; Chakrabarti, Subhananda

2018-03-01

ZnO has potential application in the field of short wavelength devices like LED's, laser diodes, UV detectors etc, because of its wide band gap (3.34 eV) and high exciton binding energy (60 meV). ZnO possess N-type conductivity due to presence of defects arising from oxygen and zinc interstitial vacancies. In order to achieve P-type or intrinsic carrier concentration an implantation study is preferred. In this report, we have varied phosphorous implantation time and studied its effect on optical as well structural properties of RF sputtered ZnO thin-films. Implantation was carried out using Plasma Immersion ion implantation technique for 10 and 20 s. These films were further annealed at 900°C for 10 s in oxygen ambient to activate phosphorous dopants. Low temperature photoluminescence (PL) spectra measured two distinct peaks at 3.32 and 3.199 eV for 20 s implanted sample annealed at 900°C. Temperature dependent PL measurement shows slightly blue shift in peak position from 18 K to 300 K. 3.199 eV peak can be attributed to donoracceptor pair (DAP) emission and 3.32 eV peak corresponds to conduction-band-to-acceptor (eA0) transition. High resolution x-ray diffraction revels dominant (002) peak from all samples. Increasing implantation time resulted in low peak intensity suggesting a formation of implantation related defects. Compression in C-axis with implantation time indicates incorporation of phosphorus in the formed film. Improvement in surface quality was observed from 20 s implanted sample which annealed at 900°C.

Changes in local surface structure and Sr depletion in Fe-implanted SrTiO3 (001)

NASA Astrophysics Data System (ADS)

Lobacheva, O.; Yiu, Y. M.; Chen, N.; Sham, T. K.; Goncharova, L. V.

2017-01-01

Local surface structure of single crystal strontium titanate SrTiO3 (001) samples implanted with Fe in the range of concentrations between 2 × 1014 to 2 × 1016 Fe/cm2 at 30 keV has been investigated. In order to facilitate Fe substitution (doping), implanted samples were annealed in oxygen at 350 °C. Sr depletion was observed from the near-surface layers impacted by the ion-implantation process, as revealed by Rutherford Backscattering Spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray Absorption Near Edge Spectroscopy (XANES), and Atomic Force Microscopy (AFM). Hydrocarbon contaminations on the surface may contribute to the mechanisms of Sr depletion, which have important implications for Sr(Ti1-xFex)O3-δ materials in gas sensing applications.

Biogenic oxygen from Earth transported to the Moon by a wind of magnetospheric ions

NASA Astrophysics Data System (ADS)

Terada, Kentaro; Yokota, Shoichiro; Saito, Yoshifumi; Kitamura, Naritoshi; Asamura, Kazushi; Nishino, Masaki N.

2017-01-01

For five days of each lunar orbit, the Moon is shielded from solar wind bombardment by the Earth's magnetosphere, which is filled with terrestrial ions. Although the possibility of the presence of terrestrial nitrogen and noble gases in lunar soil has been discussed based on their isotopic composition 1 , complicated oxygen isotope fractionation in lunar metal 2,3 (particularly the provenance of a 16O-poor component) re­mains an enigma 4,5 . Here, we report observations from the Japanese spacecraft Kaguya of significant numbers of 1-10 keV O+ ions, seen only when the Moon was in the Earth's plasma sheet. Considering the penetration depth into metal of O+ ions with such energy, and the 16O-poor mass-independent fractionation of the Earth's upper atmosphere 6 , we conclude that biogenic terrestrial oxygen has been transported to the Moon by the Earth wind (at least 2.6 × 104 ions cm-2 s-1) and implanted into the surface of the lunar regolith, at around tens of nanometres in depth 3,4 . We suggest the possibility that the Earth's atmosphere of billions of years ago may be preserved on the present-day lunar surface.

Plasma immersion ion implantation on 15-5PH stainless steel: influence on fatigue strength and wear resistance

NASA Astrophysics Data System (ADS)

Bonora, R.; Cioffi, M. O. H.; Voorwald, H. J. C.

2017-05-01

Surface improvement in steels is of great interest for applications in industry. The aim of this investigation is to study the effect of nitrogen ion implantation on the axial fatigue strength and wear resistance of 15-5 PH stainless steel. It is well know that electroplated coatings, which are used to improve abrasive wear and corrosion properties, affects negatively the fatigue strength. It is also important to consider requirements to reduce the use of coated materials with electroplated chromium and cadmium, that produce waste, which is harmful to health and environment. The HVOF (High velocity oxygen fuel) process provides hardness, wear strength and higher fatigue resistance in comparison to electroplated chromium. Plasma immersion ion implantation has been used to enhance the hardness, wear, fatigue and corrosion properties of metals and alloys. In the present research the fatigue life increased twice for 15-5 PH three hours PIII treated in comparison to base material. From the abrasive wear tests a lower pin mass reduction was observed, associated to the superficial treatments. The improvement of fatigue and mechanical performance is attributed to a combination of nitrides phase structure and compressive residual stresses during the PIII treatment.

Magnetospheric ion bombardment profiles of satellites - Europa and Dione

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pospieszalska, M.K.; Johnson, R.E.

1989-03-01

Bombardment profiles generated by tracking ions in magnetospheric plasmas onto the surface of a satellite with a suitable description of the ion motion are used to calculate the spatial dependence across a satellite surface of the ion bombardment/implantation rate for satellites embedded in planetary magnetospheric plasmas. Attention is given to the results of a parameter study; a general dependency on ion gyroradius and pitch angle is noted, together with a strong dependence of access to the leading hemisphere on pitch-angle distribution. Gyromotion is found to cause differences in the bombardment of the inner and outer hemisphere. Reasonable speed and pitch-anglemore » distributions are used to calculate profiles for sulfur ions incident on Europa and oxygen ones incident on Dione. 28 references.« less

Above room temperature ferromagnetism in Si:Mn and TiO(2-delta)Co.

PubMed

Granovsky, A; Orlov, A; Perov, N; Gan'shina, E; Semisalova, A; Balagurov, L; Kulemanov, I; Sapelkin, A; Rogalev, A; Smekhova, A

2012-09-01

We present recent experimental results on the structural, electrical, magnetic, and magneto-optical properties of Mn-implanted Si and Co-doped TiO(2-delta) magnetic oxides. Si wafers, both n- and p-type, with high and low resistivity, were used as the starting materials for implantation with Mn ions at the fluencies up to 5 x 10(16) cm(-2). The saturation magnetization was found to show the lack of any regular dependence on the Si conductivity type, type of impurity and the short post-implantation annealing. According to XMCD Mn impurity in Si does not bear any appreciable magnetic moment at room temperature. The obtained results indicate that above room temperature ferromagnetism in Mn-implanted Si originates not from Mn impurity but rather from structural defects in Si. The TiO(2-delta):Co thin films were deposited on LaAlO3 (001) substrates by magnetron sputtering in the argon-oxygen atmosphere at oxygen partial pressure of 2 x 10(-6)-2 x 10(-4) Torr. The obtained transverse Kerr effect spectra at the visible and XMCD spectra indicate on intrinsic room temperature ferromagnetism in TiO(2-delta):Co thin films at low (< 1%) volume fraction of Co.

Assessing the oxidation states and structural stability of the Ce analogue of brannerite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aluri, Esther Rani; Bachiu, Lisa M.; Grosvenor, Andrew P.

2017-07-04

The Ce-containing analogue of brannerite (ie, UTi2O6) was previously considered to be stoichiometric (ie, CeTi2O6); however, it has recently been determined that the material is O deficient. This oxygen-deficient material has been suggested to be charged balanced by the presence of a minor concentration of Ce3+ or by the A-site being cation deficient with the Ce oxidation state being 4+. A variety of Ti-containing oxides (including brannerite) have been investigated as potential nuclear wasteforms, and it is necessary to understand the electronic structure of a proposed nuclear wasteform material as well as how the structure responds to radiation from incorporatedmore » waste elements. The radiation resistance of a material can be simulated by ion implantation. The objective of this study was to confirm the Ce oxidation state in the cation- and oxygen-deficient material (ie, Ce0.94Ti2O6 - δ) and to determine how radiation damage affects this material. X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy were used to study Ce0.94Ti2O6 - δ before and after being implanted with 2 MeV Au- ions. Analysis of the Ce 3d XPS spectra from the as-synthesized samples by using a previously developed fitting method has unequivocally shown that Ce adopts both 4+ (major) and 3+ (minor) oxidation states, which was confirmed by examination of magnetic susceptibility data. Analysis of XPS and X-ray absorption near-edge spectroscopy spectra from ion-implanted materials showed that both Ce and Ti were reduced because of radiation damage and that the local coordination environments of the cations are greatly affected by radiation damage.« less

Effects of oxygen-inserted layers on diffusion of boron, phosphorus, and arsenic in silicon for ultra-shallow junction formation

NASA Astrophysics Data System (ADS)

Zhang, X.; Connelly, D.; Takeuchi, H.; Hytha, M.; Mears, R. J.; Rubin, L. M.; Liu, T.-J. K.

2018-03-01

The effects of oxygen-inserted (OI) layers on the diffusion of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) are investigated, for ultra-shallow junction formation by high-dose ion implantation followed by rapid thermal annealing. The projected range (Rp) of the implanted dopants is shallower than the depth of the OI layers. Secondary ion mass spectrometry is used to compare the dopant profiles in silicon samples that have OI layers against the dopant profiles in control samples that do not have OI layers. Diffusion is found to be substantially retarded by the OI layers for B and P, and less for As, providing shallower junction depth. The experimental results suggest that the OI layers serve to block the diffusion of Si self-interstitials and thereby effectively reduce interstitial-aided diffusion beyond the depth of the OI layers. The OI layers also help to retain more dopants within the Si, which technology computer-aided design simulations indicate to be beneficial for achieving shallower junctions with lower sheet resistance to enable further miniaturization of planar metal-oxide-semiconductor field-effect transistors for improved integrated-circuit performance and cost per function.

Surface topographical and structural analysis of Ag+-implanted polymethylmethacrylate

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Rafique, M. Shahid; Saleemi, Farhat; Naab, Fabian; Toader, Ovidiu; Sagheer, Riffat; Bashir, Shazia; Zia, Rehana; Siraj, Khurram; Iqbal, Saman

2016-08-01

Specimens of polymethylmethacrylate (PMMA) were implanted with 400-keV Ag+ ions at different ion fluences ranging from 1 × 1014 to 5 × 1015 ions/cm2 using a 400-kV NEC ion implanter. The surface topographical features of the implanted PMMA were investigated by a confocal microscope. Modifications in the structural properties of the implanted specimens were analyzed in comparison with pristine PMMA by X-ray diffraction (XRD) and Raman spectroscopy. UV-Visible spectroscopy was applied to determine the effects of ion implantation on optical transmittance of the implanted PMMA. The confocal microscopic images revealed the formation of hillock-like microstructures along the ion track on the implanted PMMA surface. The increase in ion fluence led to more nucleation of hillocks. The XRD pattern confirmed the amorphous nature of pristine and implanted PMMA, while the Raman studies justified the transformation of Ag+-implanted PMMA into amorphous carbon at the ion fluence of ⩾5 × 1014 ions/cm2. Moreover, the decrease in optical transmittance of PMMA is associated with the formation of hillocks and ion-induced structural modifications after implantation.

Surface characteristics, mechanical properties, and cytocompatibility of oxygen plasma-implanted porous nickel titanium shape memory alloy.

PubMed

Wu, S L; Chu, Paul K; Liu, X M; Chung, C Y; Ho, J P Y; Chu, C L; Tjong, S C; Yeung, K W K; Lu, W W; Cheung, K M C; Luk, K D K

2006-10-01

Good surface properties and biocompatibility are crucial to porous NiTi shape memory alloys (SMA) used in medical implants, as possible nickel release from porous NiTi may cause deleterious effects in the human body. In this work, oxygen plasma immersion ion implantation (O-PIII) was used to reduce the amount of nickel leached from porous NiTi alloys with a porosity of 42% prepared by capsule-free hot isostatic pressing. The mechanical properties, surface properties, and biocompatibility were studied by compression tests, X-ray photoelectron spectroscopy (XPS), and cell culturing. The O-PIII porous NiTi SMAs have good mechanical properties and excellent superelasticity, and the amount of nickel leached from the O-PIII porous NiTi is much less than that from the untreated samples. XPS results indicate that a nickel-depleted surface layer predominantly composed of TiO(2) is produced by O-PIII and acts as a barrier against out-diffusion of nickel. The cell culturing tests reveal that both the O-PIII and untreated porous NiTi alloys have good biocompatibility. (c) 2006 Wiley Periodicals, Inc

Characterization of carbon ion implantation induced graded microstructure and phase transformation in stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Kai; Wang, Yibo; Li, Zhuguo, E-mail: lizg@sjtu.edu.cn

Austenitic stainless steel 316L is ion implanted by carbon with implantation fluences of 1.2 × 10{sup 17} ions-cm{sup −} {sup 2}, 2.4 × 10{sup 17} ions-cm{sup −} {sup 2}, and 4.8 × 10{sup 17} ions-cm{sup −} {sup 2}. The ion implantation induced graded microstructure and phase transformation in stainless steel is investigated by X-ray diffraction, X-ray photoelectron spectroscopy and high resolution transmission electron microscopy. The corrosion resistance is evaluated by potentiodynamic test. It is found that the initial phase is austenite with a small amount of ferrite. After low fluence carbon ion implantation, an amorphous layer and ferrite phase enrichedmore » region underneath are formed. Nanophase particles precipitate from the amorphous layer due to energy minimization and irradiation at larger ion implantation fluence. The morphology of the precipitated nanophase particles changes from circular to dumbbell-like with increasing implantation fluence. The corrosion resistance of stainless steel is enhanced by the formation of amorphous layer and graphitic solid state carbon after carbon ion implantation. - Highlights: • Carbon implantation leads to phase transformation from austenite to ferrite. • The passive film on SS316L becomes thinner after carbon ion implantation. • An amorphous layer is formed by carbon ion implantation. • Nanophase precipitate from amorphous layer at higher ion implantation fluence. • Corrosion resistance of SS316L is improved by carbon implantation.« less

Structural characterization of hard materials by transmission electron microscopy (TEM): Diamond-Silicon Carbide composites and Yttria-stabilized Zirconia

NASA Astrophysics Data System (ADS)

Park, Joon Seok

2008-10-01

Diamond-Silicon Carbide (SiC) composites are excellent heat spreaders for high performance microprocessors, owing to the unparalleled thermal conductivity of the former component. Such a combination is obtained by the infiltration of liquid silicon in a synthetic diamond compact, where a rigid SiC matrix forms by the reaction between the raw materials. As well as the outstanding thermal properties, this engineered compound also retains the extreme hardness of the artificial gem. This makes it difficult to perform structural analysis by transmission electron microscopy (TEM), for it is not possible to produce thin foils out of this solid by conventional polishing methods. For the first time, a dual-beam focused ion beam (FIB) instrument successfully allowed site-specific preparation of electron-transparent specimens by the lift-out technique. Subsequent TEM studies revealed that the highest concentration of structural defects occurs in the vicinity of the diamond-SiC interfaces, which are believed to act as the major barriers to the transport of thermal energy. Diffraction contrast analyses showed that the majority of the defects in diamond are isolated perfect screw or 60° dislocations. On the other hand, SiC grains contain partial dislocations and a variety of imperfections such as microtwins, stacking faults and planar defects that are conjectured to consist of antiphase (or inversion) boundaries. Clusters of nanocrystalline SiC were also observed at the diamond-SiC boundaries, and a specific heteroepitaxial orientation relationship was discovered for all cubic SiC that grows on diamond {111} facets. Yttria-stabilized Zirconia (YSZ) is the most common electrolyte material for solid oxide fuel cell (SOFC) applications. It is an ionic conductor in which charge transfer is achieved by the transport of oxygen ions (O 2-). Like the diamond composite above, it is hard and brittle, and difficult to make into electron transparent TEM samples. Provided an effective supply of the "fuel" (oxygen and hydrogen gas), the performance of an SOFC device is primarily limited by the Ohmic resistance of the electrolyte and the electrochemical reaction kinetics at the electrode/electrolyte interfaces. While the former constraint may be substantially diminished by reducing the electrolyte's physical dimension into nanoscale thin films, the incorporation of oxygen ions into YSZ from the cathode side remains a relatively sluggish process. In order to study how structural modifications influence the effectiveness of the oxygen transfer at the cathode/YSZ boundary, ion implantation at different energies and doses was performed on the electrolyte, prior to the deposition of platinum (Pt) electrodes. Xenon ions (Xe+) were used as the implant species, and the irradiation was done on atomic layer deposited (ALD) YSZ films and monocrystalline YSZ (001) substrates. From direct electrochemical measurements on fuel cell structures made on the ALD layers, an improvement by a factor of two was witnessed in the peak power density with relatively low implantation dose (10 13 cm-2) as compared to no irradiation. However the fuel cell properties worsened significantly with elevated dosage. Cross sectional TEM images of xenon implanted YSZ single crystals demonstrated the evidence of considerable defect accumulation (dislocation loops and extended dislocation lines) at 1015 and 1016 cm-2 doses. It is speculated that the bombardment with a relatively low concentration of xenon generates an optimum density of structural defects in the electrolyte that facilitate the incorporation or diffusion of O2- ions, whereas at higher radiation fluences the associated buildup of the imperfections or the implanted elements themselves may act as impediments to the anion transfer and conduction.

Effects of processing and dopant on radiation damage removal in silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brandhorst, H. W., Jr.; Swartz, C. K.; Mehta, S.

1982-01-01

Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Color center annealing and ageing in electron and ion-irradiated yttria-stabilized zirconia

NASA Astrophysics Data System (ADS)

Costantini, Jean-Marc; Beuneu, François

2005-04-01

We have used X-band electron paramagnetic resonance (EPR) measurements at room-temperature (RT) to study the thermal annealing and RT ageing of color centers induced in yttria-stabilized zirconia (YSZ), i.e. ZrO2:Y with 9.5 mol% Y2O3, by swift electron and ion-irradiations. YSZ single crystals with the <1 0 0> orientation were irradiated with 2.5 MeV electrons, and implanted with 100 MeV 13C ions. Electron and ion beams produce the same two color centers, namely an F+-type center (singly ionized oxygen vacancy) and the so-called T-center (Zr3+ in a trigonal oxygen local environment) which is also produced by X-ray irradiations. Isochronal annealing was performed in air up to 973 K. For both electron and ion irradiations, the defect densities are plotted versus temperature or time at various fluences. The influence of a thermal treatment at 1373 K of the YSZ single crystals under vacuum prior to the irradiations was also investigated. In these reduced samples, color centers are found to be more stable than in as-received samples. Two kinds of recovery processes are observed depending on fluence and heat treatment.

Laser-induced thermo-lens in ion-implanted optically-transparent polymer

NASA Astrophysics Data System (ADS)

Stefanov, Ivan L.; Ivanov, Victor G.; Hadjichristov, Georgi B.

2009-10-01

A strong laser-induced thermo-lens (LITL) effect is found in optically-transparent ion-implanted polymer upon irradiation by a cw laser with a power up to 100 mW (λ = 532 nm). The effect is observed in bulk polymethylmethacrylate (PMMA) implanted with silicon ions (Si+). A series of PMMA specimens is examined, subjected to low-energy (50 keV) Si+ implantation at various dosages in the range from 1014 to 1017 ions/cm2. The thermo-lensing is unambiguously attributed to the modification of the subsurface region of the polymer upon the ion implantation. Having a gradient refractive-index in-depth profile, the subsurface organic-carbonaceous layer produced in the polymer by ion implantation, is responsible for the LITL effect observed in reflection geometry. The LITL occurs due to optical absorption of the ion-implanted layer of a thickness of about 100 nm buried in a depth ~ 100 nm, and subsequent laser-induced change in the refractive index of the Si+-implanted PMMA. Being of importance as considering photonic applications of ion-implanted optically-transparent polymers, the LITL effect in Si+-implanted PMMA is studied as a function of the implant dose, the incident laser power and incidence angle, and is linked to the structure formed in this ion-implanted plastic.

High yield antibiotic producing mutants of Streptomyces erythreus induced by low energy ion implantation

NASA Astrophysics Data System (ADS)

Yu, Chen; Zhixin, Lin; Zuyao, Zou; Feng, Zhang; Duo, Liu; Xianghuai, Liu; Jianzhong, Tang; Weimin, Zhu; Bo, Huang

1998-05-01

Conidia of Streptomyces erythreus, an industrial microbe, were implanted by nitrogen ions with energy of 40-60 keV and fluence from 1 × 10 11 to 5 × 10 14 ions/cm 2. The logarithm value of survival fraction had good linear relationship with the logarithm value of fluence. Some mutants with a high yield of erythromycin were induced by ion implantation. The yield increment was correlated with the implantation fluence. Compared with the mutation results induced by ultraviolet rays, mutation effects of ion implantation were obvious having higher increasing erythromycin potency and wider mutation spectrum. The spores of Bacillus subtilis were implanted by arsenic ions with energy of 100 keV. The distribution of implanted ions was measured by Rutherford Backscattering Spectrometry (RBS) and calculated in theory. The mechanism of mutation induced by ion implantation was discussed.

Relationship between wave energy and free energy from pickup ions in the Comet Halley environment

NASA Technical Reports Server (NTRS)

Huddleston, D. E.; Johnstone, A. D.

1992-01-01

The free energy available from the implanted heavy ion population at Comet Halley is calculated by assuming that the initial unstable velocity space ring distribution of the ions evolves toward a bispherical shell. Ultimately this free energy adds to the turbulence in the solar wind. Upstream and downstream free energies are obtained separately for the conditions observed along the Giotto spacecraft trajectory. The results indicate that the waves are mostly upstream propagating in the solar wind frame. The total free energy density always exceeds the measured wave energy density because, as expected in the nonlinear process of ion scattering, the available energy is not all immediately released. An estimate of the amount which has been released can be obtained from the measured oxygen ion distributions and again it exceeds that observed. The theoretical analysis is extended to calculate the k spectrum of the cometary-ion-generated turbulence.

N and Cr ion implantation of natural ruby surfaces and their characterization

NASA Astrophysics Data System (ADS)

Rao, K. Sudheendra; Sahoo, Rakesh K.; Dash, Tapan; Magudapathy, P.; Panigrahi, B. K.; Nayak, B. B.; Mishra, B. K.

2016-04-01

Energetic ions of N and Cr were used to implant the surfaces of natural rubies (low aesthetic quality). Surface colours of the specimens were found to change after ion implantation. The samples without and with ion implantation were characterized by diffuse reflectance spectra in ultra violet and visible region (DRS-UV-Vis), field emission scanning electron microscopy (FESEM), selected area electron diffraction (SAED) and nano-indentation. While the Cr-ion implantation produced deep red surface colour (pigeon eye red) in polished raw sample (without heat treatment), the N-ion implantation produced a mixed tone of dark blue, greenish blue and violet surface colour in the heat treated sample. In the case of heat treated sample at 3 × 1017 N-ions/cm2 fluence, formation of colour centres (F+, F2, F2+ and F22+) by ion implantation process is attributed to explain the development of the modified surface colours. Certain degree of surface amorphization was observed to be associated with the above N-ion implantation.

Method for ion implantation induced embedded particle formation via reduction

DOEpatents

Hampikian, Janet M; Hunt, Eden M

2001-01-01

A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.

Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Chang Seouk; School of Mechanical Engineering, Pusan National University, Pusan 609-735; Lee, Byoung-Seob

2016-02-15

The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1–10 mm{sup 2}. The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation withmore » an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research.« less

Development of pulsed processes for the manufacture of solar cells. Quarterly progress report No. 3, April--July 1978

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1978-07-01

Third quarter results under a program to develop ion implantation and specialized, associated processes necessary to achieve automated production of silicon solar cells are described. An ion implantation facility development for solar cell production is described, and a design for an automated production implanter is presented. Also, solar cell development efforts using combined ion implantation and pulsed energy techniques are discussed. Cell performance comparisons have also been made in which junctions and back surface fields were prepared by diffusion and ion implantation. A model is presented to explain the mechanism of ion implantation damage annealing using pulsed energy sources. Functionalmore » requirements have been determined for a pulsed electron beam processor for annealing ion implantation damage at a rate compatible with a 100 milliampere ion implanter. These rates result in a throughput of 100 megawatts of solar cell product per year.« less

Modification of anti-bacterial surface properties of textile polymers by vacuum arc ion source implantation

NASA Astrophysics Data System (ADS)

Nikolaev, A. G.; Yushkov, G. Yu.; Oks, E. M.; Oztarhan, A.; Akpek, A.; Hames-Kocabas, E.; Urkac, E. S.; Brown, I. G.

2014-08-01

Ion implantation provides an important technology for the modification of material surface properties. The vacuum arc ion source is a unique instrument for the generation of intense beams of metal ions as well as gaseous ions, including mixed metal-gas beams with controllable metal:gas ion ratio. Here we describe our exploratory work on the application of vacuum arc ion source-generated ion beams for ion implantation into polymer textile materials for modification of their biological cell compatibility surface properties. We have investigated two specific aspects of cell compatibility: (i) enhancement of the antibacterial characteristics (we chose to use Staphylococcus aureus bacteria) of ion implanted polymer textile fabric, and (ii) the "inverse" concern of enhancement of neural cell growth rate (we chose Rat B-35 neuroblastoma cells) on ion implanted polymer textile. The results of both investigations were positive, with implantation-generated antibacterial efficiency factor up to about 90%, fully comparable to alternative conventional (non-implantation) approaches and with some potentially important advantages over the conventional approach; and with enhancement of neural cell growth rate of up to a factor of 3.5 when grown on suitably implanted polymer textile material.

Tribological properties and surface structures of ion implanted 9Cr18Mo stainless steels

NASA Astrophysics Data System (ADS)

Fengbin, Liu; Guohao, Fu; Yan, Cui; Qiguo, Sun; Min, Qu; Yi, Sun

2013-07-01

The polished quenched-and-tempered 9Cr18Mo steels were implanted with N ions and Ti ions respectively at a fluence of 2 × 1017 ions/cm2. The mechanical properties of the samples were investigated by using nanoindenter and tribometer. The results showed that the ion implantations would improve the nanohardness and tribological property, especially N ion implantation. The surface analysis of the implanted samples was carried out by using XRD, XPS and AES. It indicated that the surface exhibits graded layers after ion implantation. For N ion implantation, the surface about 20 nm thickness is mainly composed of supersaturated interstitial N solid solution, oxynitrides, CrxCy phase and metal nitrides. In the subsurface region, the metal nitrides dominate and the other phases disappear. For Ti ion implantation, the surface of about 20 nm thickness is mainly composed of titanium oxides and carbon amorphous phase, the interstitial solid solution of Ti in Fe is abundant in the subsurface region. The surface components and structures have significant contributions to the improved mechanical properties.

Ion implantation of solar cell junctions without mass analysis

NASA Technical Reports Server (NTRS)

Fitzgerald, D.; Tonn, D. G.

1981-01-01

This paper is a summary of an investigation to determine the feasibility of producing solar cells by means of ion implantation without the use of mass analysis. Ion implants were performed using molecular and atomic phosphorus produced by the vaporization of solid red phosphorus and ionized in an electron bombardment source. Solar cell junctions were ion implanted by mass analysis of individual molecular species and by direct unanalyzed implants from the ion source. The implant dose ranged from 10 to the 14th to 10 to the 16th atoms/sq cm and the energy per implanted atom ranged from 5 KeV to 40 KeV in this study.

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Mehta, S.; Swartz, C. K.

1984-01-01

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Silver Coordination Polymers for Prevention of Implant Infection: Thiol Interaction, Impact on Respiratory Chain Enzymes, and Hydroxyl Radical Induction▿ †

PubMed Central

Gordon, Oliver; Vig Slenters, Tünde; Brunetto, Priscilla S.; Villaruz, Amer E.; Sturdevant, Daniel E.; Otto, Michael; Landmann, Regine; Fromm, Katharina M.

2010-01-01

Prosthetic joint replacements are used increasingly to alleviate pain and improve mobility of the progressively older and more obese population. Implant infection occurs in about 5% of patients and entails significant morbidity and high social costs. It is most often caused by staphylococci, which are introduced perioperatively. They are a source of prolonged seeding and difficult to treat due to antibiotic resistance; therefore, infection prevention by prosthesis coating with nonantibiotic-type anti-infective substances is indicated. A renewed interest in topically used silver has fostered development of silver nanoparticles, which, however, present a potential health hazard. Here we present new silver coordination polymer networks with tailored physical and chemical properties as nanostructured coatings on metallic implant substrates. These compounds exhibited strong biofilm sugar-independent bactericidal activity on in vitro-grown biofilms and prevented murine Staphylococcus epidermidis implant infection in vivo with slow release of silver ions and limited transient leukocyte cytotoxicity. Furthermore, we describe the biochemical and molecular mechanisms of silver ion action by gene screening and by targeting cell metabolism of S. epidermidis at different levels. We demonstrate that silver ions inactivate enzymes by binding sulfhydryl (thiol) groups in amino acids and promote the release of iron with subsequent hydroxyl radical formation by an indirect mechanism likely mediated by reactive oxygen species. This is the first report investigating the global metabolic effects of silver in the context of a therapeutic application. We anticipate that the compounds presented here open a new treatment field with a high medical impact. PMID:20660682

Platelet adhesion and plasma protein adsorption control of collagen surfaces by He + ion implantation

NASA Astrophysics Data System (ADS)

Kurotobi, K.; Suzuki, Y.; Nakajima, H.; Suzuki, H.; Iwaki, M.

2003-05-01

He + ion implanted collagen-coated tubes with a fluence of 1 × 10 14 ions/cm 2 were exhibited antithrombogenicity. To investigate the mechanisms of antithrombogenicity of these samples, plasma protein adsorption assay and platelet adhesion experiments were performed. The adsorption of fibrinogen (Fg) and von Willebrand factor (vWf) was minimum on the He + ion implanted collagen with a fluence of 1 × 10 14 ions/cm 2. Platelet adhesion (using platelet rich plasma) was inhibited on the He + ion implanted collagen with a fluence of 1 × 10 14 ions/cm 2 and was accelerated on the untreated collagen and ion implanted collagen with fluences of 1 × 10 13, 1 × 10 15 and 1 × 10 16 ions/cm 2. Platelet activation with washed platelets was observed on untreated collagen and He + ion implanted collagen with a fluence of 1 × 10 14 ions/cm 2 and was inhibited with fluences of 1 × 10 13, 1 × 10 15 and 1 × 10 16 ions/cm 2. Generally, platelets can react with a specific ligand inside the collagen (GFOGER sequence). The results of platelets adhesion experiments using washed platelets indicated that there were no ligands such as GFOGER on the He + ion implanted collagen over a fluence of 1 × 10 13 ions/cm 2. On the 1 × 10 14 ions/cm 2 implanted collagen, no platelet activation was observed due to the influence of plasma proteins. From the above, it is concluded that the decrease of adsorbed Fg and vWf caused the antithrombogenicity of He + ion implanted collagen with a fluence of 1 × 10 14 ions/cm 2 and that plasma protein adsorption took an important role repairing the graft surface.

Evaluation of stabilization techniques for ion implant processing

NASA Astrophysics Data System (ADS)

Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Narcy, Mark E.; Livesay, William R.

1999-06-01

With the integration of high current ion implant processing into volume CMOS manufacturing, the need for photoresist stabilization to achieve a stable ion implant process is critical. This study compares electron beam stabilization, a non-thermal process, with more traditional thermal stabilization techniques such as hot plate baking and vacuum oven processing. The electron beam processing is carried out in a flood exposure system with no active heating of the wafer. These stabilization techniques are applied to typical ion implant processes that might be found in a CMOS production process flow. The stabilization processes are applied to a 1.1 micrometers thick PFI-38A i-line photoresist film prior to ion implant processing. Post stabilization CD variation is detailed with respect to wall slope and feature integrity. SEM photographs detail the effects of the stabilization technique on photoresist features. The thermal stability of the photoresist is shown for different levels of stabilization and post stabilization thermal cycling. Thermal flow stability of the photoresist is detailed via SEM photographs. A significant improvement in thermal stability is achieved with the electron beam process, such that photoresist features are stable to temperatures in excess of 200 degrees C. Ion implant processing parameters are evaluated and compared for the different stabilization methods. Ion implant system end-station chamber pressure is detailed as a function of ion implant process and stabilization condition. The ion implant process conditions are detailed for varying factors such as ion current, energy, and total dose. A reduction in the ion implant systems end-station chamber pressure is achieved with the electron beam stabilization process over the other techniques considered. This reduction in end-station chamber pressure is shown to provide a reduction in total process time for a given ion implant dose. Improvements in the ion implant process are detailed across several combinations of current and energy.

Au5+ ion implantation induced structural phase transitions probed through structural, microstructural and phonon properties in BiFeO3 ceramics, using synergistic ion beam energy

NASA Astrophysics Data System (ADS)

Dey, Ranajit; Bajpai, P. K.

2018-04-01

Implanted Au5+-ion-induced modification in structural and phonon properties of phase pure BiFeO3 (BFO) ceramics prepared by sol-gel method was investigated. These BFO samples were implanted by 15.8 MeV ions of Au5+ at various ion fluence ranging from 1 × 1014 to 5 × 1015 ions/cm2. Effect of Au5+ ions' implantation is explained in terms of structural phase transition coupled with amorphization/recrystallization due to ion implantation probed through XRD, SEM, EDX and Raman spectroscopy. XRD patterns show broad diffuse contributions due to amorphization in implanted samples. SEM images show grains collapsing and mounds' formation over the surface due to mass transport. The peaks of the Raman spectra were broadened and also the peak intensities were decreased for the samples irradiated with 15.8 MeV Au5+ ions at a fluence of 5 × 1015 ion/cm2. The percentage increase/decrease in amorphization and recrystallization has been estimated from Raman and XRD data, which support the synergistic effects being operative due to comparable nuclear and electronic energy losses at 15.8 MeV Au5+ ion implantation. Effect of thermal treatment on implanted samples is also probed and discussed.

Modification of polyvinyl alcohol surface properties by ion implantation

NASA Astrophysics Data System (ADS)

Pukhova, I. V.; Kurzina, I. A.; Savkin, K. P.; Laput, O. A.; Oks, E. M.

2017-05-01

We describe our investigations of the surface physicochemical properties of polyvinyl alcohol modified by silver, argon and carbon ion implantation to doses of 1 × 1014, 1 × 1015 and 1 × 1016 ion/cm2 and energies of 20 keV (for C and Ar) and 40 keV (for Ag). Infrared spectroscopy (IRS) indicates that destructive processes accompanied by chemical bond (sbnd Cdbnd O) generation are induced by implantation, and X-ray photoelectron spectroscopy (XPS) analysis indicates that the implanted silver is in a metallic Ag3d state without stable chemical bond formation with polymer chains. Ion implantation is found to affect the surface energy: the polar component increases while the dispersion part decreases with increasing implantation dose. Surface roughness is greater after ion implantation and the hydrophobicity increases with increasing dose, for all ion species. We find that ion implantation of Ag, Ar and C leads to a reduction in the polymer microhardness by a factor of five, while the surface electrical resistivity declines modestly.

Corrosion in Magnesium and a Magnesium Alloy

NASA Astrophysics Data System (ADS)

Akavipat, Sanay

Magnesium and a magnesium alloy (AZ91C) have been ion implanted over a range of ions energies (50 to 150 keV) and doses (1 x 10('16) to 2 x 10('17) ions/cm('2)) to modify the corrosion properties of the metals. The corrosion tests were done by anodic polarization in chloride -free and chloride-containing aqueous solutions of a borated -boric acid with a pH of 9.3. Anodic polarization measurements showed that some implantations could greatly reduce the corrosion current densities at all impressed voltages and also increased slightly the pitting potential, which indicated the onset of the chloride attack. These improvements in corrosion resistance were caused by boron implantations into both types of samples. However, iron implantations were found to improve only the magnesium alloy. To study the corrosion in more detail, Scanning Auger Microprobe Spectrometer (SAM), Scanning Electron Microscope (SEM) with an X-ray Energy Spectrometry (XES) attachment, and Transmission Electron Microscope (TEM) measurements were used to analyze samples before, after, and at various corrosion stages. In both the unimplanted pure magnesium and AZ91C samples, anodic polarization results revealed that there were three active corrosion stages (Stages A, C, and E) and two passivating stages (Stages B and D). Examination of Stages A and B in both types of samples showed that only a mild, generalized corrosion had occurred. In Stage C of the TD samples, a pitting breakdown in the initial oxide film was observed. In Stage C of the AZ91C samples, galvanic and intergranular attack around the Mg(,17)Al(,12) intermetallic islands and along the matrix grain boundaries was observed. Stage D of both samples showed the formation of a thick, passivating oxygen containing, probably Mg(OH)(,2) film. In Stage E, this film was broken down by pits, which formed due to the presence of the chloride ions in both types of samples. Stages A through D of the unimplanted samples were not seen in the boron or iron implanted samples. Instead one low current density passivating stage was formed, which was ultimately broken down by the chloride attack. It is believed that the implantation of boron modified the initial surface film to inhibit corrosion, whereas the iron implantation modified the intermetallic (Mg(,17)Al(,12)) islands to act as sacrificial anodes.

Influence of biocompatible metal ions (Ag, Fe, Y) on the surface chemistry, corrosion behavior and cytocompatibility of Mg-1Ca alloy treated with MEVVA.

PubMed

Liu, Yang; Bian, Dong; Wu, Yuanhao; Li, Nan; Qiu, Kejin; Zheng, Yufeng; Han, Yong

2015-09-01

Mg-1Ca samples were implanted with biocompatible alloy ions Ag, Fe and Y respectively with a dose of 2×10(17)ionscm(-2) by metal vapor vacuum arc technique (MEVVA). The surface morphologies and surface chemistry were investigated by SEM, AES and XPS. Surface changes were observed after all three kinds of elemental ion implantation. The results revealed that the modified layer was composed of two sublayers, including an outer oxidized layer with mixture of oxides and an inner implanted layer, after Ag and Fe ion implantation. Y ion implantation induced an Mg/Ca-deficient outer oxidized layer and the distribution of Y along with depth was more homogeneous. Both electrochemical test and immersion test revealed accelerated corrosion rate of Ag-implanted Mg-1Ca and Fe-implanted Mg-1Ca, whereas Y ion implantation showed a short period of protection since enhanced corrosion resistance was obtained by electrochemical test, but accelerated corrosion rate was found by long period immersion test. Indirect cytotoxicity assay indicated good cytocompatibility of Y-implanted Mg-1Ca. Moreover, the corresponding corrosion mechanisms involving implanting ions into magnesium alloys were proposed, which might provide guidance for further application of plasma ion implantation to biodegradable Mg alloys. Copyright © 2015 Elsevier B.V. All rights reserved.

Structural Changes in Polymer Films by Fast Ion Implantation

NASA Astrophysics Data System (ADS)

Parada, M. A.; Minamisawa, R. A.; Muntele, C.; Muntele, I.; De Almeida, A.; Ila, D.

2006-11-01

In applications from food wrapping to solar sails, polymers films can be subjected to intense charged panicle bombardment and implantation. ETFE (ethylenetetrafluoroethylene) with high impact resistance is used for pumps, valves, tie wraps, and electrical components. PFA (tetrafluoroethylene-per-fluoromethoxyethylene) and FEP (tetrafluoroethylene-hexa-fluoropropylene) are sufficiently biocompatible to be used as transcutaneous implants since they resist damage from the ionizing space radiation, they can be used in aerospace engineering applications. PVDC (polyvinyllidene-chloride) is used for food packaging, and combined with others plastics, improves the oxygen barrier responsible for the food preservation. Fluoropolymers are also known for their radiation dosimetry applications, dependent on the type and energy of the radiation, as well as of the beam intensity. In this work ETFE, PFA, FEP and PVDC were irradiated with ions of keV and MeV energies at several fluences and were analyzed through techniques as RGA, OAP, FTIR, ATR and Raman spectrophotometry. CF3 is the main specie emitted from PFA and FEP when irradiated with MeV protons. H and HF are released from ETFE due to the broken C-F and C-H bonds when the polymer is irradiated with keV Nitrogen ions and protons. At high fluence, especially for keV Si and N, damage due to carbonization is observed with the formation of hydroperoxide and polymer dehydroflorination. The main broken bonds in PVDC are C-O and C-Cl, with the release of Cl and the formation of double carbon bonds. The ion fluence that causes damage, which could compromise fluoropolymer film applications, has been determined.

Ion beam modification of topological insulator bismuth selenide

DOE PAGES

Sharma, Peter Anand; Sharma, A. L. Lima; Hekmaty, Michelle A.; ...

2014-12-17

In this study, we demonstrate chemical doping of a topological insulator Bi 2Se 3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi 2Se 3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi 2Se 3, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allowmore » better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.« less

A simple ion implanter for material modifications in agriculture and gemmology

NASA Astrophysics Data System (ADS)

Singkarat, S.; Wijaikhum, A.; Suwannakachorn, D.; Tippawan, U.; Intarasiri, S.; Bootkul, D.; Phanchaisri, B.; Techarung, J.; Rhodes, M. W.; Suwankosum, R.; Rattanarin, S.; Yu, L. D.

2015-12-01

In our efforts in developing ion beam technology for novel applications in biology and gemmology, an economic simple compact ion implanter especially for the purpose was constructed. The designing of the machine was aimed at providing our users with a simple, economic, user friendly, convenient and easily operateable ion implanter for ion implantation of biological living materials and gemstones for biotechnological applications and modification of gemstones, which would eventually contribute to the national agriculture, biomedicine and gem-industry developments. The machine was in a vertical setup so that the samples could be placed horizontally and even without fixing; in a non-mass-analyzing ion implanter style using mixed molecular and atomic nitrogen (N) ions so that material modifications could be more effective; equipped with a focusing/defocusing lens and an X-Y beam scanner so that a broad beam could be possible; and also equipped with a relatively small target chamber so that living biological samples could survive from the vacuum period during ion implantation. To save equipment materials and costs, most of the components of the machine were taken from decommissioned ion beam facilities. The maximum accelerating voltage of the accelerator was 100 kV, ideally necessary for crop mutation induction and gem modification by ion beams from our experience. N-ion implantation of local rice seeds and cut gemstones was carried out. Various phenotype changes of grown rice from the ion-implanted seeds and improvements in gemmological quality of the ion-bombarded gemstones were observed. The success in development of such a low-cost and simple-structured ion implanter provides developing countries with a model of utilizing our limited resources to develop novel accelerator-based technologies and applications.

Development of pulsed processes for the manufacture of solar cells

NASA Technical Reports Server (NTRS)

Minnucci, J. A.

1978-01-01

The results of a 1-year program to develop the processes required for low-energy ion implantation for the automated production of silicon solar cells are described. The program included: (1) demonstrating state-of-the-art ion implantation equipment and designing an automated ion implanter, (2) making efforts to improve the performance of ion-implanted solar cells to 16.5 percent AM1, (3) developing a model of the pulse annealing process used in solar cell production, and (4) preparing an economic analysis of the process costs of ion implantation.

Optical reflectivity study of silicon ion implanted poly(methyl methacrylate)

NASA Astrophysics Data System (ADS)

Hadjichristov, Georgi B.; Stefanov, Ivan L.; Florian, Bojana I.; Blaskova, Gergana D.; Ivanov, Victor G.; Faulques, Eric

2009-11-01

The optical reflectivity (both specular and off-specular) of poly(methyl methacrylate) (PMMA) implanted with silicon ions (Si +) at energy of 50 keV, is studied in the spectral range 0.25-25 μm. The effect from the Si + implantation on the reflectivity of two PMMA materials is examined in the dose range from 10 14 to 10 17 ions/cm 2 and is linked to the structure formed in this ion implanted plastic. As compared to the pristine PMMA, an enhancement of the reflectivity of Si + implanted PMMA is observed, that is attributed to the modification of the subsurface region of PMMA upon the ion implantation. The ion-produced subsurface organic interface is also probed by laser-induced thermo-lens.

Study of reticulated vitreous carbon surface treated by plasma immersion ion implantation for electrodes production

NASA Astrophysics Data System (ADS)

Silva, L. L. G.; Conceição, D. A. S.; Oishi, S. S.; Toth, A.; Ueda, M.

2012-03-01

RVC samples were treated by nitrogen plasma immersion ion implantation (N-PIII) for electrodes production. High-voltage pulses with amplitudes of -3.0 kV or -10.0 kV were applied to the RVC samples while the treatment time was 10, 20 and 30 min. The samples were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. The SEM images present an apparent enhancement of the surface roughness after the treatment probably due to the surface sputtering during the PIII process. This observation is in agreement with the specific electrochemical surface area (SESA) of RVC electrodes. An increase was observed of the SESA values for the PIII-treated samples compared to the untreated specimen. Some oxygen and nitrogen containing groups were introduced on the RVC surface after the PIII treatment. Both plasma-induced process: the surface roughening and the introduction of the polar species on the RVC surface are beneficial for the RVC electrodes application.

Carbon and metal-carbon implantations into tool steels for improved tribological performance

NASA Astrophysics Data System (ADS)

Hirvonen, J.-P.; Harskamp, F.; Torri, P.; Willers, H.; Fusari, A.; Gibson, N.; Haupt, J.

1997-05-01

The high-fluence implantation of carbon and dual implantations of metal-metalloid pairs into steels with different microstructures are briefly reviewed. A previously unexamined system, the implantation of Si and C into two kinds of tool steels, M3 and D2, have been studied in terms of microstructure and tribological performance. In both cases ion implantation transfers a surface into an amorphous layer. However, the tribological behavior of these two materials differs remarkably: in the case of ion-implanted M3 a reduction of wear in a steel pin is observed even at high pin loads, whereas in the case of ion-implanted D2 the beneficial effects of ion implantation were limited to the lowest pin load. The importance of an initial phase at the onset of sliding is emphasized and a number of peculiarities observed in ion-implanted M3 steel are discussed.

Optical characterization of poly(methyl methacrylate) implanted with low energy ions

NASA Astrophysics Data System (ADS)

Gupta, Renu; Kumar, Vijay; Goyal, Parveen Kumar; Kumar, Shyam

2012-12-01

The samples of poly(methyl methacrylate) (PMMA) were subjected to 100 keV N+ and Ar+ ion implantation up to a maximum fluence of 2 × 1016 ions/cm2. The effect of ion implantation on the optical energy gap and the refractive index has been studied through UV-visible spectroscopy. The results clearly indicate a decrease in the values of optical energy gap and an increase in the values of refractive index as an effect of ion implantation corresponding to both of the ions. It has also been observed that the changes induced by the implanted ions are more pronounced for N+ ions in comparison to Ar+ ions. This variation has been correlated with the calculated ranges of these ions in PMMA polymer using Stopping and Range of Ions in Matter (SRIM) code. Finally, an attempt has been made to correlate all the observed changes with the induced structural changes as revealed through Raman spectroscopy.

Self-organized surface ripple pattern formation by ion implantation

NASA Astrophysics Data System (ADS)

Hofsäss, Hans; Zhang, Kun; Bobes, Omar

2016-10-01

Ion induced ripple pattern formation on solid surfaces has been extensively studied in the past and the theories describing curvature dependent ion erosion as well as redistribution of recoil atoms have been very successful in explaining many features of the pattern formation. Since most experimental studies use noble gas ion irradiation, the incorporation of the ions into the films is usually neglected. In this work we show that the incorporation or implantation of non-volatile ions also leads to a curvature dependent term in the equation of motion of a surface height profile. The implantation of ions can be interpreted as a negative sputter yield; and therefore, the effect of ion implantation is opposite to the one of ion erosion. For angles up to about 50°, implantation of ions stabilizes the surface, whereas above 50°, ion implantation contributes to the destabilization of the surface. We present simulations of the curvature coefficients using the crater function formalism and we compare the simulation results to the experimental data on the ion induced pattern formation using non-volatile ions. We present several model cases, where the incorporation of ions is a crucial requirement for the pattern formation.

Multiple ion beam irradiation for the study of radiation damage in materials

NASA Astrophysics Data System (ADS)

Taller, Stephen; Woodley, David; Getto, Elizabeth; Monterrosa, Anthony M.; Jiao, Zhijie; Toader, Ovidiu; Naab, Fabian; Kubley, Thomas; Dwaraknath, Shyam; Was, Gary S.

2017-12-01

The effects of transmutation produced helium and hydrogen must be included in ion irradiation experiments to emulate the microstructure of reactor irradiated materials. Descriptions of the criteria and systems necessary for multiple ion beam irradiation are presented and validated experimentally. A calculation methodology was developed to quantify the spatial distribution, implantation depth and amount of energy-degraded and implanted light ions when using a thin foil rotating energy degrader during multi-ion beam irradiation. A dual ion implantation using 1.34 MeV Fe+ ions and energy-degraded D+ ions was conducted on single crystal silicon to benchmark the dosimetry used for multi-ion beam irradiations. Secondary Ion Mass Spectroscopy (SIMS) analysis showed good agreement with calculations of the peak implantation depth and the total amount of iron and deuterium implanted. The results establish the capability to quantify the ion fluence from both heavy ion beams and energy-degraded light ion beams for the purpose of using multi-ion beam irradiations to emulate reactor irradiated microstructures.

Multiple Ion Implantation Effects on Wear and Wet Ability of Polyethylene Based Polymers

NASA Astrophysics Data System (ADS)

Torrisi, L.; Visco, A. M.; Campo, N.

2004-10-01

Polyethylene based polymers were ion implanted with multiple irradiations of different ions (N+, Ar+ and Kr+) at energies between 30 keV and 300 keV and doses ranging between 1013 and 1016 ions/cm2. The ion implantation dehydrogenises the polyethylene inducing cross-link effects in the residual polymer carbons. At high doses the irradiated surface show properties similar to graphite surfaces. The depth of the modified layers depends on the ion range in polyethylene at the incident ion energy. The chemical modification depends on the implanted doses and on the specie of the incident ions. A "pin-on-disc" machine was employed to measure the polymer wear against AISI-316 L stainless steel. A "contact-angle-test" machine was employed to measure the wet ability of the polymer surface for 1 μl pure water drop. Measurements demonstrate that the multiple ion implantation treatments decrease the surface wear and the surface wetting and produce a more resistant polymer surface. The properties of the treated surfaces improves the polymer functionality for many bio-medical applications, such as those relative to the polyethylene friction discs employed in knee and hip prosthesis joints. The possibility to use multiply ion implantations of polymers with traditional ion implanters and with laser ion sources producing plasmas is investigated.

Low energy implantation of boron with decaborane ions

NASA Astrophysics Data System (ADS)

Albano, Maria Angela

The goal of this dissertation was to determine the feasibility of a novel approach to forming ultra shallow p-type junctions (tens of nm) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane (B 10H14) vapor. An experimental ion implanter with an electron impact ion source and magnetic mass separation was built at the Ion Beam and Thin Film Research Laboratory at NJIT. Beams of B10Hx+ ions with currents of a few microamperes and energies of 1 to 12 keV were obtained and used for implantation experiments. Profiles of B and H atoms implanted in Si were measured by Secondary Ion Mass Spectroscopy (SIMS) before and after rapid thermal annealing (RTA). From the profiles, the junction depth of 57 nm (at 1018 cm-3 B concentration) was obtained with 12 keV decaborane ions followed by RTA. The dose of B atoms that can be implanted at low energy into Si is limited by sputtering as the ion beam sputters both the matrix and the implanted atoms. As the number of sputtered B atoms increases with the implanted dose and approaches the number of the implanted atoms, equilibrium of B in Si is established. This effect was investigated by comparison of the B dose calculated from the ion beam integration with B content in the sample measured by Nuclear Reaction Analysis (NRA). Maximum (equilibrium) doses of 1.35 x 1016 B cm -2 and 2.67 x 1016 B cm-2 were obtained at the beam energies of 5 and 12 keV, respectively. The problem of forming shallow p-type junctions in Si is related not only to implantation depth, but also to transient enhanced diffusion (TED). TED in Si implanted with B10Hx+ was measured on boron doping superlattice (B-DSL) marker layers. It was found that TED, following decaborane implantation, is the same as with monomer B+ ion implantation of equivalent energy and that it decreases with the decreasing ion energy. (Abstract shortened by UMI.)

Effect of C-implantation on Nerve-Cell Attachment to Polystyrene Films

NASA Astrophysics Data System (ADS)

Sommani, Piyanuch; Tsuji, Hiroshi; Kitamura, Tsuyoshi; Hattori, Mitsutaka; Yamada, Tetsuya; Sato, Hiroko; Gotoh, Yasuhito; Ishikawa, Junzo

The surfaces of the polystyrene films spin-coated on glass were modified by carbon negative-ion implantation with various ion doses from 1×1014 to 3×1016 ions/cm2 at 5 and 10 keV. The implantation conditions with and without a pattering mask were for investigation of the cell-attachment properties and for evaluation of surface physical properties of contact angle, respectively. The contact angles of modified surface were investigated by pure water drop and air bubble method. The lowest angle value of the implanted films at 5 and 10 keV were approximately 72° at 3×1015 ions/cm2 after dipping in the de-ionized water for 2 hours. The lowering of contact angles on C-implanted surfaces when increase the ion dose is due to formation of the OH and C-O bonds. Nerve-cell-attachment properties of modified surface were investigated by the nerve-like cell of rat adrenal pheochromocytoma (PC12h) in vitro. After 2 days culture of the PC12h cells, no cells attached on the polystyrene films implanted with low ion dose from 1×1014 to 3×1014 ions/cm2. On the polystyrene films implanted with the dose order of 1015 ions/cm2, the cells selectively attached only on the implanted region. Whereas on the surfaces implanted with high dose such as 1×1016 and 3×1016 ions/cm2 mostly cells attached on the implanted region, and some attached on the unimplanted region, as well as cells were abnormal in shape and large size. Therefore, the suitable dose implantation for the selective-attachment of nerve-cells on the polystyrene films implanted at 5 and 10 keV were obtained around the dose order of 1015 ions/cm2, and the best condition for the selective attachment properties was at 3×1015 ions/cm2 corresponding to the lowest contact angle.

Assessing oxygen saturation in retinal vessels in high myopia patients pre- and post-implantable collamer lens implantation surgery.

PubMed

Chen, Pei; Cai, Xiaoxiao; Xu, Lijun; Zhang, Jing; Yang, Ying; Gao, Qianying; Ge, Jian; Yu, Keming; Zhuang, Jing

2017-09-01

To determine whether posterior chamber phakic implantable collamer lens (ICL) surgery in high myopia patients impedes oxygen saturation of retinal vessels. Mean oxygen saturation and diameter in retinal blood vessels were measured before and after ICL implantation surgery to correct high myopia refractive errors (i.e. -6.00 to -20.25 dioptres [D]), using an Oxymap T1 retinal oximeter. In 17 eyes of 17 patients, the Oxymap T1 retinal oximeter detected a small but significant decrease in oxygen saturation of retinal venules, 1-week postoperatively (compared to preoperative measurements). Moreover, at 1 week after ICL implantation, the diameter of patient retinal vessels had consistently contracted, compared to preoperative measurements. By 1 month after ICL surgery, however, both the oxygen saturation and retinal vessel diameter had returned to preoperative levels. Otherwise, no statistically significant difference in oxygen saturation and diameter of retinal arterioles was found when comparing their measurements before and 1 week after implantation. Stable levels of oxygen saturation in retinal vessels, as detected by the Oxymap T1 oximeter, show ICL implantation would not leave lasting impact or adverse effects to retina oxygen saturation in high myopia patients. © 2017 Acta Ophthalmologica Scandinavica Foundation. Published by John Wiley & Sons Ltd.

Research on ion implantation in MEMS device fabrication by theory, simulation and experiments

NASA Astrophysics Data System (ADS)

Bai, Minyu; Zhao, Yulong; Jiao, Binbin; Zhu, Lingjian; Zhang, Guodong; Wang, Lei

2018-06-01

Ion implantation is widely utilized in microelectromechanical systems (MEMS), applied for embedded lead, resistors, conductivity modifications and so forth. In order to achieve an expected device, the principle of ion implantation must be carefully examined. The elementary theory of ion implantation including implantation mechanism, projectile range and implantation-caused damage in the target were studied, which can be regarded as the guidance of ion implantation in MEMS device design and fabrication. Critical factors including implantations dose, energy and annealing conditions are examined by simulations and experiments. The implantation dose mainly determines the dopant concentration in the target substrate. The implantation energy is the key factor of the depth of the dopant elements. The annealing time mainly affects the repair degree of lattice damage and thus the activated elements’ ratio. These factors all together contribute to ions’ behavior in the substrates and characters of the devices. The results can be referred to in the MEMS design, especially piezoresistive devices.

Scanning transmission electron microscopy (STEM) study on surface modified CVD diamond/Si(111) film post implanted Fe-B and NiFe-B related to GMR properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Purwanto, Setyo, E-mail: setyo-p@batan.go.id, E-mail: purwantosetyo@yahoo.com; Dimyati, A., E-mail: arbi-dimyati@hotmail.com; Iskandar, R.

Nanostructure investigation on the post implantation by Fe-B and NiFe-B on CVD diamond/Si(111) film have been studied by means of STEM related to their GMR phenomena. Two samples were investigated carefully, firstly sample is post NiFe-B at E=70keV and dose= 10{sup 15} ions/cm{sup 2} (denoted as A-E3D1). Secondly, is post FeB at E=20 keV and dose= 10{sup 15} ions/cm{sup 2} (denoted as B-E1D1). Based on FPP measurement at room temperature (RT) and H{sub applied} = 8 kOe, A-E3D1 sample has MR ratio almost 80% and MR ratio in B-E1D1 sample is 45%. Based on STEM-EDX investigation, there are two aspectsmore » of how MR ratio of A-E3D1 more higher than those of B-E1D1. Firstly, surface nanostructure on the top of A-E3D1 film is more grazing than on the top of B-E1D1. Analysis with Scanning Transmission Electron Microscope (STEM) equipped with Electron Energy Loss Spectroscopy (EELS) the growth of amorphous carbon layer on top of the implanted diamond film with thickness around 100 nm and only 20 nm on the no implanted sample have observed. Boron atoms were found inside the carbon amorphous layer distributed homogenously. Secondly, oxygen content at the interface between diamond film and silicon substrate in sample A-E3D1 was lower than those in B-E1D1 sample. This condition gives the resistance value in A-E3D1 lower than value in B-E1D1. This result is close to the Raman Spectroscopy data measurement which obviously suggests changes on the Raman spectrum due to implantation related to Oxygen excitation from B-E1D1 sample.« less

New materials based on polylactide modified with silver and carbon ions

NASA Astrophysics Data System (ADS)

Kurzina, I. A.; Pukhova, I. V.; Botvin, V. V.; Davydova, D. V.; Filimoshkin, A. G.; Savkin, K. P.; Oskomov, K. V.; Oks, E. M.

2015-11-01

An integrated study of poly-L-lactide (PL) synthesis and the physicochemical properties of film surfaces, both modified by silver and carbon ion implantation and also unmodified PL surfaces, has been carried out. Surface modification was done using aMevva-5.Ru metal ion source with ion implantation doses of 1.1014, 1.1015 and 1.1016 ion/cm2. Material characterization was done using NMR, IRS, XPS and AFM. The molecular weight (MW), micro-hardness, surface resistivity, and limiting wetting angle of both un-implanted and implanted samples were measured. The results reveal that degradation of PL macromolecules occurs during ion implantation, followed by CO or CO2 removal and MW decrease. With increasing implantation dose, the glycerol wettability of the PL surface increases but the water affinity decreases (hydrophobic behavior). After silver and carbon ion implantation into the PL samples, the surface resistivity is reduced by several orders of magnitude and a tendency to micro-hardness reductionis induced.

Enhancement of Ag nanoparticles concentration by prior ion implantation

NASA Astrophysics Data System (ADS)

Mu, Xiaoyu; Wang, Jun; Liu, Changlong

2017-09-01

Thermally grown SiO2 layer on Si substrates were singly or sequentially implanted with Zn or Cu and Ag ions at the same fluence of 2 × 1016/cm2. The profiles of implanted species, structure, and spatial distribution of the formed nanoparticles (NPs) have been characterized by the cross-sectional transmission electron microscope (XTEM) and Rutherford backscattering spectrometry (RBS). It is found that pre-implantation of Zn or Cu ions could suppress the self sputtering of Ag atoms during post Ag ion implantation, which gives rise to fabrication of Ag NPs with a high density. Moreover, it has also been demonstrated that the suppressing effect strongly depends on the applied energy and mobility of pre-implanted ions. The possible mechanism for the enhanced Ag NPs concentration has been discussed in combination with SRIM simulations. Both vacancy-like defects acting as the increased nucleation sites for Ag NPs and a high diffusivity of prior implanted ions in SiO2 play key roles in enhancing the deposition of Ag implants.

Interpretation of TOF SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation

NASA Astrophysics Data System (ADS)

Ignatova, V. A.; Möller, W.; Conard, T.; Vandervorst, W.; Gijbels, R.

2005-06-01

The TRIDYN collisional computer simulation has been modified to account for emission of ionic species and molecules during sputter depth profiling, by introducing a power law dependence of the ion yield as a function of the oxygen surface concentration and by modelling the sputtering of monoxide molecules. The results are compared to experimental data obtained with dual beam TOF SIMS depth profiling of ZrO2/SiO2/Si high-k dielectric stacks with thicknesses of the SiO2 interlayer of 0.5, 1, and 1.5 nm. Reasonable agreement between the experiment and the computer simulation is obtained for most of the experimental features, demonstrating the effects of ion-induced atomic relocation, i.e., atomic mixing and recoil implantation, and preferential sputtering. The depth scale of the obtained profiles is significantly distorted by recoil implantation and the depth-dependent ionization factor. A pronounced double-peak structure in the experimental profiles related to Zr is not explained by the computer simulation, and is attributed to ion-induced bond breaking and diffusion, followed by a decoration of the interfaces by either mobile Zr or O.

Silicon Quantum Dots with Counted Antimony Donor Implants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Meenakshi; Pacheco, Jose L.; Perry, Daniel Lee

2015-10-01

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

Chemical, corrosion and topographical analysis of stainless steel implants after different implantation periods.

PubMed

Chrzanowski, Wojciech; Armitage, David Andrew; Knowles, Jonathan Campbell; Szade, Jacek; Korlacki, Wojciech; Marciniak, Jan

2008-07-01

The aim of this work is to examine the corrosion properties, chemical composition, and material-implant interaction after different periods of implantation of plates used to correct funnel chest. The implants are made of 316L stainless steel. Examinations are carried out on three implants: new (nonimplanted) and two implanted for 29 and 35 months. The corrosion study reveals that in the potential range that could occur in the physiological condition the new bar has the lowest current density and the highest corrosion potential. This indicates that the new plate has the highest corrosion resistance and the corrosion resistance could be reduced during implantation by the instruments used during the operation. XPS analysis reveals changes in the surface chemistry. The longer the implantation time the more carbon and oxygen are observed and only trace of elements such as Cr, Mo are detected indicating that surface is covered by an organic layer. On some parts of the implants whitish tissue is observed: the thickness of which increased with the time of implantation. This tissue was identified as an organic layer; mainly attached to the surface on the areas close to where the implant was bent to attain anatomical fit and thus where the implant has higher surface roughness. The study indicates that the chest plates are impaired by the implantation procedure and contact with biological environment. The organic layer on the surface shows that the implant did not stay passive but some reactions at the tissue-implant interface occurred. These reactions should be seen as positive, as it indicates that the implants were accepted by the tissues. Nevertheless, if the implants react, they may continue to release chromium, nickel, and other harmful ions long term as indicated by lower corrosion resistance of the implants following implantation.

Surface characterization and biodegradation behavior of magnesium implanted poly(L-lactide/caprolactone) films

NASA Astrophysics Data System (ADS)

Sokullu, Emel; Ersoy, Fulya; Yalçın, Eyyup; Öztarhan, Ahmet

2017-11-01

Biopolymers are great source for medical applications such as drug delivery, wound patch, artificial tissue studies etc., food packaging, cosmetic applications etc. due to their biocompatibility and biodegradability. Particularly, the biodegradation ability of a biomaterial makes it even advantageous for the applications. The more tunable the biodegradation rate the more desired the biopolymers. There are many ways to tune degradation rate including surface modification. In this study ion implantation method applied to biopolymer surface to determine its effect on biodegradation rate. In this study, surface modification of poly(L-lactide/caprolactone) copolymer film is practiced via Mg-ion-implantation using a MEVVA ion source. Mg ions were implanted at a fluence of 1 × 1015 ions/cm2 and ion energy of 30 keV. Surface characterization of Mg-ion-implanted samples is examined using Atomic Force Microscopy, Raman spectroscopy, contact angle measurement and FT-IR Spectroscopy. These analyses showed that the surface become more hydrophilic and rougher after the ion implantation process which is advantageous for cell attachment on medical studies. The in vitro enzymatic degradation of Mg-implanted samples was investigated in Lipase PS containing enzyme solution. Enzymatic degradation rate was examined by mass loss calculation and it is shown that Mg-implanted samples lost more than 30% of their weight while control samples lost around 20% of their weight at the end of the 16 weeks. The evaluation of the results confirmed that Mg-ion-implantation on poly(L-lactide/caprolactone) films make the surface rougher and more hydrophilic and changes the organic structure on the surface. On the other hand, ion implantation has increased the biodegradation rate.

Specific features of the current–voltage characteristics of SiO{sub 2}/4H-SiC MIS structures with phosphorus implanted into silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikhaylova, A. I., E-mail: m.aleksey.spb@gmail.com; Afanasyev, A. V.; Ilyin, V. A.

The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO{sub 2} interface and in the bulk of silicon dioxide.

System OptimizatIon of the Glow Discharge Optical Spectroscopy Technique Used for Impurity Profiling of ION Implanted Gallium Arsenide.

DTIC Science & Technology

1980-12-01

AFIT/GEO/EE/80D-1 I -’ SYSTEM OPTIMIZATION OF THE GLOW DISCHARGE OPTICAL SPECTROSCOPY TECHNIQUE USED FOR IMPURITY PROFILING OF ION IMPLANTED GALLIUM ...EE/80D-1 (\\) SYSTEM OPTIMIZATION OF THE GLOW DISCHARGE OPTICAL SPECTROSCOPY TECHNIQUE USED FOR IMPURITY PROFILING OF ION IMPLANTED GALLIUM ARSENIDE...semiconductors, specifically annealed and unan- nealed ion implanted gallium arsenide (GaAs). Methods to improve the sensitivity of the GDOS system have

Gene expression profiles in promoted-growth rice seedlings that germinated from the seeds implanted by low-energy N+ beam

PubMed Central

Ya, Huiyuan; Chen, Qiufang; Wang, Weidong; Chen, Wanguang; Qin, Guangyong; Jiao, Zhen

2012-01-01

The stimulation effect that some beneficial agronomic qualities have exhibited in present-generation plants have also been observed due to ion implantation on plants. However, there is relatively little knowledge regarding the molecular mechanism of the stimulation effects of ion-beam implantation. In order to extend our current knowledge about the functional genes related to this stimulation effect, we have reported a comprehensive microarray analysis of the transcriptome features of the promoted-growth rice seedlings germinating from seeds implanted by a low-energy N+ beam. The results showed that 351 up-regulated transcripts and 470 down-regulated transcripts, including signaling proteins, kinases, plant hormones, transposable elements, transcription factors, non-coding protein RNA (including miRNA), secondary metabolites, resistance proteins, peroxidase and chromatin modification, are all involved in the stimulating effects of ion-beam implantation. The divergences of the functional catalog between the vacuum and ion implantation suggest that ion implantation is the principle cause of the ion-beam implantation biological effects, and revealed the complex molecular networks required to adapt to ion-beam implantation stress in plants, including enhanced transposition of transposable elements, promoted ABA biosynthesis and changes in chromatin modification. Our data will extend the current understanding of the molecular mechanisms and gene regulation of stimulation effects. Further research on the candidates reported in this study should provide new insights into the molecular mechanisms of biological effects induced by ion-beam implantation. PMID:22843621

Evaluation of electron beam stabilization for ion implant processing

NASA Astrophysics Data System (ADS)

Buffat, Stephen J.; Kickel, Bee; Philipps, B.; Adams, J.; Ross, Matthew F.; Minter, Jason P.; Marlowe, Trey; Wong, Selmer S.

1999-06-01

With the integration of high energy ion implant processes into volume CMOS manufacturing, the need for thick resist stabilization to achieve a stable ion implant process is critical. With new photoresist characteristics, new implant end station characteristics arise. The resist outgassing needs to be addressed as well as the implant profile to ensure that the dosage is correct and the implant angle does not interfere with other underlying features. This study compares conventional deep-UV/thermal with electron beam stabilization. The electron beam system used in this study utilizes a flood electron source and is a non-thermal process. These stabilization techniques are applied to a MeV ion implant process in a CMOS production process flow.

Optimization of single keV ion implantation for the construction of single P-donor devices

NASA Astrophysics Data System (ADS)

Yang, Changyi; Jamieson, David N.; Hopf, Toby; Andresen, Soren E.; Hearne, Sean M.; Hudson, Fay E.; Pakes, Christopher I.; Mitic, Mladen; Gauja, Eric; Tamanyan, Grigori; Dzurak, Andrew S.; Prawer, Steven; Clark, Robert G.

2005-02-01

We report recent progress in single keV ion implantation and online detection for the controlled implantation of single donors in silicon. When integrated with silicon nanofabrication technology this forms the "top down" strategy for the construction of prototype solid state quantum computer devices based on phosphorus donors in silicon. We have developed a method of single ion implantation and online registration that employs detector electrodes adjacent to the area into which the donors are to be implanted. The implantation sites are positioned with nanometer accuracy using an electron beam lithography patterned PMMA mask. Control of the implantation depth of 20 nm is achieved by tuning the phosphorus ion energy to 14 keV. The counting of single ion implantation in each site is achieved by the detection of e-/h+ pairs produced by the implanted phosphorus ion in the substrate. The system is calibrated by use of Mn K-line x-rays (5.9 and 6.4 keV) and we find the ionization energy of the 14 keV phosphorus ions in silicon to be about 3.5-4.0 keV for implants through a 5 nm SiO2 surface layer. This paper describes the development of an improved PIN detector structure that provides more reliable performance of the earlier MOS structure. With the new structure, the energy noise threshold has been minimized to 1 keV or less. Unambiguous detection/counting of single keV ion implantation events were achieved with a confidence level greater than 98% with a reliable and reproducible fabrication process.

Ion Beam Processing.

DTIC Science & Technology

1987-03-13

guides Taps for plastics Orthopedic implants (hip and knee joints, etc.) Extrusion spinnerettes Finishing rolls for copper rod Extrusion nozzles...detail in following sections. C. Comparison to Coating Techniques -,* Because ion implantation is a process that modifies surface properties it is often...Therefore, it is important to understand the differences between ion implantation and coating techniques, especially ion plating. The result of ion

Localization of carbon atoms and extended defects in silicon implanted separately with C+ and B+ ions and jointly with C+ and B+ ions

NASA Astrophysics Data System (ADS)

Jadan, M.; Chelyadinskii, A. R.; Odzhaev, V. B.

2013-02-01

The possibility to control the localization of implanted carbon in sites and interstices in silicon immediately during the implantation has been demonstrated. The formation of residual extended defects in silicon implanted separately with C+ and B+ ions and jointly with C+ and B+ ions has been shown. It has been found that the formation of residual defects can be suppressed due to annihilation of point defects at C atoms (the Watkins effect). The positive effect is attained if implanted carbon is localized over lattice sites, which is provided by its implantation with the effective current density of the scanning ion beam no lower than 1.0 μA cm-2.

Characterization of low temperature metallic magnetic calorimeters having gold absorbers with implanted 163Ho ions

NASA Astrophysics Data System (ADS)

Gastaldo, L.; Ranitzsch, P. C.-O.; von Seggern, F.; Porst, J.-P.; Schäfer, S.; Pies, C.; Kempf, S.; Wolf, T.; Fleischmann, A.; Enss, C.; Herlert, A.; Johnston, K.

2013-05-01

For the first time we have investigated the behavior of fully micro-fabricated low temperature metallic magnetic calorimeters (MMCs) after undergoing an ion-implantation process. This experiment had the aim to show the possibility to perform a high precision calorimetric measurement of the energy spectrum following the electron capture of 163Ho using MMCs having the radioactive 163Ho ions implanted in the absorber. The isotope 163Ho decays through electron capture to 163Dy and features the smallest known QEC value. This peculiarity makes 163Ho a very interesting candidate to investigate the value of the electron neutrino mass by the analysis of the energy spectrum. The implantation of 163Ho ions was performed at ISOLDE-CERN. The performance of a detector that underwent an ion-implantation process is compared to the one of a detector without implanted ions. The results show that the implantation dose of ions used in this experiment does not compromise the properties of the detector. Moreover the performance of the detector prototype having the 163Ho ions implanted in the absorber is already close to the requirements needed for an experiment with sub-eV sensitivity to the electron neutrino mass. Based on these results, an optimized detector design for future 163Ho experiments is presented.

Nano-scale phase transformation in Ti-implanted austenitic 301 stainless steel.

PubMed

Gustiono, Dwi; Sakaguchi, Norihito; Shibayama, Tamaki; Kinoshita, Hiroshi; Takahashi, Heishichiro

2003-01-01

Phase-transformation behaviours were investigated for austenitic 301 stainless steel during implantation at room temperature with 300 keV Ti ions to fluences of 8 x 10(19) to approximately 3 x 10(21) ions m(-2) by means of transmission electron microscopy. The cross-sectional specimen was prepared using a focused ion beam. Plan observation of the implanted specimen showed that phase transformation from gamma-phase to alpha-phase was induced by implantation to a fluence of 3 x 10(20) Ti ions m(-2). The nucleation of the irradiation (implantation)-induced phase increased with the increase of the dose. The orientation relationship between the gamma matrix and the induced alpha martensitic phase was identified as (011)alpha//(111)gamma and [11-1]alpha//[10-1], close to the Kurdjumov-Sachs relationship. Cross-sectional observation after implantation to a fluence of 5 x 10(20) ions m(-2) showed that phase transformation mostly nucleated near the surface and occurred in the higher the concentration gradient of the implanted ion, i.e. a higher stress concentration takes place and this stress introduced by the implanted ions acts as a driving force for the transformation.

Effects of vanadium ion implantation on microstructure, mechanical and tribological properties of TiN coatings

NASA Astrophysics Data System (ADS)

Deng, Bin; Tao, Ye; Guo, Deliang

2012-09-01

TiN coatings were deposited on the substrates of cemented carbide (WC-TiC-Co) by Magnetic Filter Arc Ion Plating (MFAIP) and then implanted with vanadium through Metal Vacuum Vapor Arc (MEVVA) ion source with the doses of 1 × 1017 and 5 × 1017 ions/cm2 at 40 kV. The microstructures and chemical compositions of the V-implanted TiN coatings were investigated using Glancing Incidence X-ray Diffraction (GIXRD) and X-ray Photoelectron Spectroscopy (XPS), together with the mechanical and tribological properties of coatings were characterized using nano-indentation and ball-on-disk tribometer. It was found that the diffraction peaks of the V-implanted TiN coatings at the doses of 5 × 1017 ions/cm2 shifted to higher angles and became broader. The hardness and elastic modulus of TiN coatings increased after V ion implantation. The wear mechanism for both un-implanted and V-implanted TiN coatings against GCr15 steel ball was adhesive wear, and the V-implanted TiN coatings had a lower friction coefficient as well as a better wear resistance

Electrochemical behavior and biological response of Mesenchymal Stem Cells on cp-Ti after N-ions implantation

NASA Astrophysics Data System (ADS)

Rizwan, M.; Ahmad, A.; Deen, K. M.; Haider, W.

2014-11-01

Titanium and its alloys are most widely used as implant materials due to their excellent biocompatibility, mechanical properties and chemical stability. In this study Nitrogen ions of known dosage were implanted over cp-Ti by Pelletron accelerator with beam energy of 0.25 MeV.The atomic force microscopy of bare and nitrogen implanted specimens confirmed increase in surface roughness with increase in nitrogen ions concentration. X-ray diffraction patterns of ions implanted surfaces validated the formation of TiN0.3 and Ti3N2-xnitride phases. The tendency to form passive film and electrochemical behavior of these surfaces in ringer lactate (RL) solution was evaluated by Potentiodynamic polarization and electrochemical impedance spectroscopy respectively. It is proved that nitrogen ions implantation was beneficial to reduce corrosion rate and stabilizing passive film by increasing charge transfer resistance in RL. It was concluded that morphology and proliferation of Mesenchymal Stem Cells on nitrogen ions implanted surfaces strongly depends on surface roughness and nitride phases.

Development of pulsed processes for the manufacture of solar cells

NASA Technical Reports Server (NTRS)

Minnucci, J. A.

1979-01-01

Low-energy ion implantation processes for the automated production of silicon solar cells were investigated. Phosphorus ions at an energy of 10 keV and dose of 2 x 10 to the 15th power/sq cm were implanted in silicon solar cells to produce junctions, while boron ions at 25 keV and 5 x 10 to the 15th power were implanted in the cells to produce effective back surface fields. An ion implantation facility with a beam current up to 4 mA and a production throughput of 300 wafers per hour was designed and installed. A design was prepared for a 100 mA, automated implanter with a production capacity of 100 MW sub e/sq cm per year. Two process sequences were developed which employ ion implantation and furnace or pulse annealing. A computer program was used to determine costs for junction formation by ion implantation and various furnace annealing cycles to demonstrate cost effectiveness of these methods.

Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing

NASA Astrophysics Data System (ADS)

Jia, Qi; Huang, Kai; You, Tiangui; Yi, Ailun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bin; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

2018-05-01

SiC is a widely used wide-bandgap semiconductor, and the freestanding ultrathin single-crystalline SiC substrate provides the material platform for advanced devices. Here, we demonstrate the fabrication of a freestanding ultrathin single-crystalline SiC substrate with a thickness of 22 μm by ion slicing using 1.6 MeV H ion implantation. The ion-slicing process performed in the MeV energy range was compared to the conventional case using low-energy H ion implantation in the keV energy range. The blistering behavior of the implanted SiC surface layer depends on both the implantation temperature and the annealing temperature. Due to the different straggling parameter for two implant energies, the distribution of implantation-induced damage is significantly different. The impact of implantation temperature on the high-energy and low-energy slicing was opposite, and the ion-slicing SiC in the MeV range initiates at a much higher temperature.

Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

NASA Technical Reports Server (NTRS)

Sarkisov, S.; Curley, M.; Williams, E. K.; Wilkosz, A.; Ila, D.; Poker, D. B.; Hensley, D. K.; Smith, C.; Banks, C.; Penn, B.;

Comparison of monomode KTiOPO4 waveguide formed by C3+ ion implantation and Rb+ ion exchange

NASA Astrophysics Data System (ADS)

Cui, Xiao-Jun; Wang, Liang-Ling

2017-02-01

In this work, we report on the formation and characterization of monomode KTiOPO4 waveguide at 1539 nm by 6.0 MeV C3+ ion implantation with the dose of 2×1015 ions/cm2 and Rb+-K+ ion exchange, respectively. The relative intensity of light as a function of effective refractive index of TM modes at 633 nm and 1539 nm for KTiOPO4 waveguide formed by two different methods were compared with the prism coupling technique. The refractive index (nz) profile for the ion implanted waveguide was reconstructed by reflectivity calculation method, and one for the ion exchanged waveguide was by inverse Wentzel-Kramers-Brillouin. The nuclear energy loss versus penetration depth of the C3+ ions implantation into KTiOPO4 was simulated using the Stopping Range of Ions in Matter software. The Rutherford Backscattering Spectrometry spectrum of KTiOPO4 waveguide was analyzed after ions exchanged. The results showed that monomode waveguide at 1539 nm can be formed by ion implantation and Rb+ -K+ ion exchange, respectively.

Nanostructures by ion beams

NASA Astrophysics Data System (ADS)

Schmidt, B.

Ion beam techniques, including conventional broad beam ion implantation, ion beam synthesis and ion irradiation of thin layers, as well as local ion implantation with fine-focused ion beams have been applied in different fields of micro- and nanotechnology. The ion beam synthesis of nanoparticles in high-dose ion-implanted solids is explained as phase separation of nanostructures from a super-saturated solid state through precipitation and Ostwald ripening during subsequent thermal treatment of the ion-implanted samples. A special topic will be addressed to self-organization processes of nanoparticles during ion irradiation of flat and curved solid-state interfaces. As an example of silicon nanocrystal application, the fabrication of silicon nanocrystal non-volatile memories will be described. Finally, the fabrication possibilities of nanostructures, such as nanowires and chains of nanoparticles (e.g. CoSi2), by ion beam synthesis using a focused Co+ ion beam will be demonstrated and possible applications will be mentioned.

A negative ion beam application to artificial formation of neuron network in culture

NASA Astrophysics Data System (ADS)

Tsuji, Hiroshi; Sato, Hiroko; Baba, Takahiro; Gotoh, Yasuhito; Ishikawa, Junzo

2000-02-01

A negative ion beam modification of the biocompatibility of polystyrene surface was investigated for the artificial formation of neuron network in culture with respect to negative ion species. Negative ions of silver, copper or carbon were implanted in nontreated polystyrene (NTPS) dishes at conditions of 20 keV and 3×1015ions/cm2 through a mask with many slits of 60 μm in width. For the surface wettability, the contact angle of ion-implanted NTPS was about 75° for silver-negative ions, which was lower than 86° of the original NTPS. For carbon implantation, on the contrary, the contact angles did not change from the original value. In culture experiment using neuron cells of PC-12h (rat adrenal pheochromocytoma), the cells cultured with serum medium in two days showed the cell attachment and growth in number only at the ion-implanted region on NTPS for all ion species. In another two days in culture with nonserum medium including a nerve growth factor, the outgrowth of neural protrusions was also observed only at the ion-implanted region for all ion species. There was a difference in number of attached cells for ion species. The silver-negative ion-implanted NTPS had a large effect for cell attachment compared with other two ion species. This reason is considered to be due to the lowest contract angles among them.

Ion-implanted Si-nanostructures buried in a SiO{sub 2} substrate studied with soft-x-ray spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, R.; Rubensson, J.E.; Eisebitt, S.

1997-04-01

In recent years silicon nanostructures have gained great interest because of their optical luminescence, which immediately suggests several applications, e.g., in optoelectronic devices. Nanostructures are also investigated because of the fundamental physics involved in the underlying luminescence mechanism, especially attention has been drawn to the influence of the reduced dimensions on the electronic structure. The forming of stable and well-defined nanostructured materials is one goal of cluster physics. For silicon nanostructures this goal has so far not been reached, but various indirect methods have been established, all having the problem of producing less well defined and/or unstable nanostructures. Ion implantationmore » and subsequent annealing is a promising new technique to overcome some of these difficulties. In this experiment the authors investigate the electronic structure of ion-implanted silicon nanoparticles buried in a stabilizing SiO{sub 2} substrate. Soft X-ray emission (SXE) spectroscopy features the appropriate information depth to investigate such buried structures. SXE spectra to a good approximation map the local partial density of occupied states (LPDOS) in broad band materials like Si. The use of monochromatized synchrotron radiation (MSR) allows for selective excitation of silicon atoms in different chemical environments. Thus, the emission from Si atom sites in the buried structure can be separated from contributions from the SiO{sub 2} substrate. In this preliminary study strong size dependent effects are found, and the electronic structure of the ion-implanted nanoparticles is shown to be qualitatively different from porous silicon. The results can be interpreted in terms of quantum confinement and chemical shifts due to neighboring oxygen atoms at the interface to SiO{sub 2}.« less

Deuterium diffusion and retention in tungsten coated with barrier layer during ion irradiation

NASA Astrophysics Data System (ADS)

Begrambekov, L. B.; Kaplevsky, A. S.; Dovganyuk, S. S.; Evsin, A. E.; Baryshnikova, I. E.

2017-12-01

The results of the comparative analysis of low-temperature desorption of deuterium from tungsten coated with aluminum and yttrium films under the irradiation by hydrogen plasma with oxygen impurity are presented. The irradiation of aluminum or yttrium coating by H2+1%O2 plasma leads to the desorption of implanted deuterium from the samples. It was shown that the number of atoms desorbed depends on the sign of enthalpy of hydrogen solution in the metal film.

Study of shallow junction formation by boron-containing cluster ion implantation of silicon and two-stage annealing

NASA Astrophysics Data System (ADS)

Lu, Xin-Ming

Shallow junction formation made by low energy ion implantation and rapid thermal annealing is facing a major challenge for ULSI (ultra large scale integration) as the line width decreases down to the sub micrometer region. The issues include low beam current, the channeling effect in low energy ion implantation and TED (transient enhanced diffusion) during annealing after ion implantation. In this work, boron containing small cluster ions, such as GeB, SiB and SiB2, was generated by using the SNICS (source of negative ion by cesium sputtering) ion source to implant into Si substrates to form shallow junctions. The use of boron containing cluster ions effectively reduces the boron energy while keeping the energy of the cluster ion beam at a high level. At the same time, it reduces the channeling effect due to amorphization by co-implanted heavy atoms like Ge and Si. Cluster ions have been used to produce 0.65--2keV boron for low energy ion implantation. Two stage annealing, which is a combination of low temperature (550°C) preannealing and high temperature annealing (1000°C), was carried out to anneal the Si sample implanted by GeB, SiBn clusters. The key concept of two-step annealing, that is, the separation of crystal regrowth, point defects removal with dopant activation from dopant diffusion, is discussed in detail. The advantages of the two stage annealing include better lattice structure, better dopant activation and retarded boron diffusion. The junction depth of the two stage annealed GeB sample was only half that of the one-step annealed sample, indicating that TED was suppressed by two stage annealing. Junction depths as small as 30 nm have been achieved by two stage annealing of sample implanted with 5 x 10-4/cm2 of 5 keV GeB at 1000°C for 1 second. The samples were evaluated by SIMS (secondary ion mass spectrometry) profiling, TEM (transmission electron microscopy) and RBS (Rutherford Backscattering Spectrometry)/channeling. Cluster ion implantation in combination with two-step annealing is effective in fabricating ultra-shallow junctions.

Ion implantation in ices and its relevance to the icy moons of the external planets

NASA Astrophysics Data System (ADS)

Strazzulla, G.; Baratta, G. A.; Fulvio, D.; Garozzo, M.; Leto, G.; Palumbo, M. E.; Spinella, F.

2007-08-01

Solid, atmosphere-less objects in the Solar System are continuously irradiated by energetic ions mostly in the keV-MeV energy range. Being the penetration depth of the incoming ions usually much lower than the thickness of the target, they are stopped into the ice. They deposit energy in the target induce the breaking of molecular bonds. The recombination of fragments produce different molecules. Reactive ions (e.g., H, C, N, O, S) induce all of the effects of any other ion, but in addition have a chance, by implantation in the target, to form new species containing the projectile. An ongoing research program performed at our laboratory has the aim to investigate ion implantation of reactive ions in many relevant ice mixtures. The results obtained so far indicate that some molecular species observed on icy planetary surfaces could not be native of that object but formed by implantation of reactive ions. In particular we present data obtained after: • C, N and S implantation in water ice • H implantation in carbon and sulfur dioxide

AlN metal-semiconductor field-effect transistors using Si-ion implantation

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

2018-04-01

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

NASA Astrophysics Data System (ADS)

Cherkashin, N.; Daghbouj, N.; Seine, G.; Claverie, A.

2018-04-01

Sequential He++H+ ion implantation, being more effective than the sole implantation of H+ or He+, is used by many to transfer thin layers of silicon onto different substrates. However, due to the poor understanding of the basic mechanisms involved in such a process, the implantation parameters to be used for the efficient delamination of a superficial layer are still subject to debate. In this work, by using various experimental techniques, we have studied the influence of the He and H relative depth-distributions imposed by the ion energies onto the result of the sequential implantation and annealing of the same fluence of He and H ions. Analyzing the characteristics of the blister populations observed after annealing and deducing the composition of the gas they contain from FEM simulations, we show that the trapping efficiency of He atoms in platelets and blisters during annealing depends on the behavior of the vacancies generated by the two implants within the H-rich region before and after annealing. Maximum efficiency of the sequential ion implantation is obtained when the H-rich region is able to trap all implanted He ions, while the vacancies it generated are not available to favor the formation of V-rich complexes after implantation then He-filled nano-bubbles after annealing. A technological option is to implant He+ ions first at such an energy that the damage it generates is located on the deeper side of the H profile.

Interferometric pump-probe characterization of the nonlocal response of optically transparent ion implanted polymers

NASA Astrophysics Data System (ADS)

Stefanov, Ivan L.; Hadjichristov, Georgi B.

2012-03-01

Optical interferometric technique is applied to characterize the nonlocal response of optically transparent ion implanted polymers. The thermal nonlinearity of the ion-modified material in the near-surface region is induced by continuous wave (cw) laser irradiation at a relatively low intensity. The interferometry approach is demonstrated for a subsurface layer of a thickness of about 100 nm formed in bulk polymethylmethacrylate (PMMA) by implantation with silicon ions at an energy of 50 keV and fluence in the range 1014-1017 cm-2. The laser-induced thermooptic effect in this layer is finely probed by interferometric imaging. The interference phase distribution in the plane of the ion implanted layer is indicative for the thermal nonlinearity of the near-surface region of ion implanted optically transparent polymeric materials.

Silica coatings formed on noble dental casting alloy by the sol-gel dipping process.

PubMed

Yoshida, K; Tanagawa, M; Kamada, K; Hatada, R; Baba, K; Inoi, T; Atsuta, M

1999-08-01

The sol-gel dipping process, in which liquid silicon alkoxide is transformed into the solid silicon-oxygen network, can produce a thin film coating of silica (SiO2). The features of this method are high homogeneity and purity of the thin SiO2 film and a low sinter temperature, which are important in preparation of coating films that can protect from metallic ion release from the metal substrate and prevent attachment of dental plaque. We evaluated the surface characteristics of the dental casting silver-palladium-copper-gold (Ag-Pd-Cu-Au) alloy coated with a thin SiO2 film by the sol-gel dipping process. The SiO2 film bonded strongly (over 40 MPa) to Ti-implanted Ag-Pd-Cu-Au alloy substrate as demonstrated by a pull test. Hydrophobilization of Ti-implanted/SiO2-coated surfaces resulted in a significant increase of the contact angle of water (80.5 degrees) compared with that of the noncoated alloy specimens (59.3 degrees). Ti-implanted/SiO2-coated specimens showed the release of many fewer metallic ions (192 ppb/cm2) from the substrate than did noncoated specimens (2,089 ppb/cm2). The formation of a thin SiO2 film by the sol-gel dipping process on the surface of Ti-implanted Ag-Pd-Cu-Au alloy after casting clinically may be useful for minimizing the possibilities of the accumulation of dental plaque and metal allergies caused by intraoral metal restorations.

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

NASA Technical Reports Server (NTRS)

Fonash, S. J.; Sigh, R.; Mu, H. C.

1986-01-01

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

Reflectivity modification of polymethylmethacrylate by silicon ion implantation

NASA Astrophysics Data System (ADS)

Hadjichristov, Georgi B.; Ivanov, Victor; Faulques, Eric

2008-05-01

The effect of silicon ion implantation on the optical reflection of bulk polymethylmethacrylate (PMMA) was examined in the visible and near UV. A low-energy (30 and 50 keV) Si + beam at fluences in the range from 10 13 to 10 17 cm -2 was used for ion implantation of PMMA. The results show that a significant enhancement of the reflectivity from Si +-implanted PMMA occurs at appropriate implantation energy and fluence. The structural modifications of PMMA by the silicon ion implantation were characterized by means of photoluminescence and Raman spectroscopy. Formation of hydrogenated amorphous carbon (HAC) layer beneath the surface of the samples was established and the corresponding HAC domain size was estimated.

Microfabrication Method using a Combination of Local Ion Implantation and Magnetorheological Finishing

NASA Astrophysics Data System (ADS)

Han, Jin; Kim, Jong-Wook; Lee, Hiwon; Min, Byung-Kwon; Lee, Sang Jo

2009-02-01

A new microfabrication method that combines localized ion implantation and magnetorheological finishing is proposed. The proposed technique involves two steps. First, selected regions of a silicon wafer are irradiated with gallium ions by using a focused ion beam system. The mechanical properties of the irradiated regions are altered as a result of the ion implantation. Second, the wafer is processed by using a magnetorheological finishing method. During the finishing process, the regions not implanted with ion are preferentially removed. The material removal rate difference is utilized for microfabrication. The mechanisms of the proposed method are discussed, and applications are presented.

Metal ion levels in patients with stainless steel spinal instrumentation.

PubMed

McPhee, I Bruce; Swanson, Cheryl E

2007-08-15

Case-control study. To determine whether metal ion concentrations are elevated in patients with spinal instrumentation. Studies have shown that serum and urinary levels of component metal ions are abnormally elevated in patients with total joint arthroplasties. Little is known of metal ion release and concentrations in patients with spinal instrumentation. The study group consisted of patients who had undergone spinal instrumentation for various spinal disorders with a variety of stainless steel implants, 5 to 25 years previously. A group of volunteers without metal implants were controls. All subjects were tested for serum nickel, blood chromium, and random urine chromium/creatinine ratio estimation. The study group consisted of 32 patients with retained implants and 12 patients whose implants had been removed. There were 26 unmatched controls. There was no difference in serum nickel and blood chromium levels between all 3 groups. The mean urinary chromium/creatinine ratio for patients with implants and those with implants removed was significantly greater than controls (P < 0.001). The difference between study subgroups was not significant (P = 0.16). Of several patient and instrumentation variables, only the number of couplings approached significance for correlation with the urine chromium excretion (P = 0.07). Spinal implants do not raise the levels of serum nickel and blood chromium. There is evidence that metal ions are released from spinal implants and excreted in urine. The excretion of chromium in patients with spinal implants was significantly greater than normal controls although lower where the implants have been removed. The findings are consistent with low-grade release of ions from implants with rapid clearance, thus maintaining normal serum levels. Levels of metal ions in the body fluids probably do not reach a level that causes late side-effect; hence, routine removal of the implants cannot be recommended.

Evaluation of lattice displacement in Mg - Implanted GaN by Rutherford backscattering spectroscopy

NASA Astrophysics Data System (ADS)

Nishikata, N.; Kushida, K.; Nishimura, T.; Mishima, T.; Kuriyama, K.; Nakamura, T.

2017-10-01

Evaluation of lattice displacement in Mg-ion implanted GaN is studied by combining elastic recoil detection analysis (ERDA), Rutherford backscattering spectroscopy (RBS) and Photoluminescence (PL) measurements. Mg-ion implantation into GaN single crystal wafer is performed with energies of 30 keV (ion fluence; 3.5 × 1014 cm-2) and 60 keV (6.5 × 1014 cm-2) at room temperature. The ERDA measurements using the 1.5 MeV helium beam can evaluate hydrogen from the surface to ∼300 nm. The hydrogen concentration for un-implanted and as-implanted GaN is 3.1 × 1014 cm-2 and 6.1 × 1014 cm-2 at around 265 nm in depth. χmin (the ratio of aligned and random yields) near the surface of the 〈0 0 0 1〉 direction for Ga is 1.61% for un-implanted and 2.51% for Mg-ion implanted samples. On the other hand, the value of χmin for N is 10.08% for un-implanted and 11.20% for Mg-ion implanted samples. The displacement concentration of Ga and N estimated from these χmin values is 4.01 × 1020 cm-3 and 5.46 × 1020 cm-3, respectively. This suggests that Ga vacancy (VGa), N vacancy (VN), Ga interstitial (Gai), and N interstitial (Ni) is introduced in Mg-ion implanted GaN. A strong emission at around 400 nm in as-implanted GaN is related to a VN donor and some acceptor pairs. It is suggested that the origin of the very high resistivity after the Mg-ion implantation is attributed to the carrier compensation effect due to the deep level of Ni as a non-radiative center.

Calculation of recoil implantation profiles using known range statistics

NASA Technical Reports Server (NTRS)

Fung, C. D.; Avila, R. E.

1985-01-01

A method has been developed to calculate the depth distribution of recoil atoms that result from ion implantation onto a substrate covered with a thin surface layer. The calculation includes first order recoils considering projected range straggles, and lateral straggles of recoils but neglecting lateral straggles of projectiles. Projectile range distributions at intermediate energies in the surface layer are deduced from look-up tables of known range statistics. A great saving of computing time and human effort is thus attained in comparison with existing procedures. The method is used to calculate recoil profiles of oxygen from implantation of arsenic through SiO2 and of nitrogen from implantation of phosphorus through Si3N4 films on silicon. The calculated recoil profiles are in good agreement with results obtained by other investigators using the Boltzmann transport equation and they also compare very well with available experimental results in the literature. The deviation between calculated and experimental results is discussed in relation to lateral straggles. From this discussion, a range of surface layer thickness for which the method applies is recommended.

High-intensity low energy titanium ion implantation into zirconium alloy

NASA Astrophysics Data System (ADS)

Ryabchikov, A. I.; Kashkarov, E. B.; Pushilina, N. S.; Syrtanov, M. S.; Shevelev, A. E.; Korneva, O. S.; Sutygina, A. N.; Lider, A. M.

2018-05-01

This research describes the possibility of ultra-high dose deep titanium ion implantation for surface modification of zirconium alloy Zr-1Nb. The developed method based on repetitively pulsed high intensity low energy titanium ion implantation was used to modify the surface layer. The DC vacuum arc source was used to produce metal plasma. Plasma immersion titanium ions extraction and their ballistic focusing in equipotential space of biased electrode were used to produce high intensity titanium ion beam with the amplitude of 0.5 A at the ion current density 120 and 170 mA/cm2. The solar eclipse effect was used to prevent vacuum arc titanium macroparticles from appearing in the implantation area of Zr sample. Titanium low energy (mean ion energy E = 3 keV) ions were implanted into zirconium alloy with the dose in the range of (5.4-9.56) × 1020 ion/cm2. The effect of ion current density, implantation dose on the phase composition, microstructure and distribution of elements was studied by X-ray diffraction, scanning electron microscopy and glow-discharge optical emission spectroscopy, respectively. The results show the appearance of Zr-Ti intermetallic phases of different stoichiometry after Ti implantation. The intermetallic phases are transformed from both Zr0.7Ti0.3 and Zr0.5Ti0.5 to single Zr0.6Ti0.4 phase with the increase in the implantation dose. The changes in phase composition are attributed to Ti dissolution in zirconium lattice accompanied by the lattice distortions and appearance of macrostrains in intermetallic phases. The depth of Ti penetration into the bulk of Zr increases from 6 to 13 μm with the implantation dose. The hardness and wear resistance of the Ti-implanted zirconium alloy were increased by 1.5 and 1.4 times, respectively. The higher current density (170 mA/cm2) leads to the increase in the grain size and surface roughness negatively affecting the tribological properties of the alloy.

Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique

NASA Astrophysics Data System (ADS)

Arisawa, You; Sawano, Kentarou; Usami, Noritaka

2017-06-01

The influence of ion implantation energies on compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si substrates was investigated. It was found that relaxation ratio can be enhanced over 100% at relatively low implantation energies, and compressive strain in the topmost Si layer is maximized at 45 keV due to large lattice mismatch. Cross-sectional transmission electron microscope images revealed that defects are localized around the hetero-interface between the Si1-xCx layer and the Ar+-implanted Si substrate when the implantation energy is 45 keV, which decreases the amount of defects in the topmost Si layer and the upper part of the Si1-xCx buffer layer.

Ion Implantation Studies of Titanium Metal Surfaces.

DTIC Science & Technology

1981-01-01

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The Effect of Ag and Ag+N Ion Implantation on Cell Attachment Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Urkac, Emel Sokullu; Oztarhan, Ahmet; Gurhan, Ismet Deliloglu

2009-03-10

Implanted biomedical prosthetic devices are intended to perform safely, reliably and effectively in the human body thus the materials used for orthopedic devices should have good biocompatibility. Ultra High Molecular Weight Poly Ethylene (UHMWPE) has been commonly used for total hip joint replacement because of its very good properties. In this work, UHMWPE samples were Ag and Ag+N ion implanted by using the Metal-Vapor Vacuum Arc (MEVVA) ion implantation technique. Samples were implanted with a fluency of 1017 ion/cm2 and extraction voltage of 30 kV. Rutherford Backscattering Spectrometry (RBS) was used for surface studies. RBS showed the presence of Agmore » and N on the surface. Cell attachment properties investigated with model cell lines (L929 mouse fibroblasts) to demonstrate that the effect of Ag and Ag+N ion implantation can favorably influence the surface of UHMWPE for biomedical applications. Scanning electron microscopy (SEM) was used to demonstrate the cell attachment on the surface. Study has shown that Ag+N ion implantation represents more effective cell attachment properties on the UHMWPE surfaces.« less

Photosensitivity enhancement of PLZT ceramics by positive ion implantation

DOEpatents

Peercy, P.S.; Land, C.E.

1980-06-13

The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Ions that are implanted include H/sup +/, He/sup +/, Ar/sup +/, and a preferred co-implant of Ar/sup +/ and Ne/sup +/. The positive ion implantation advantageously serves to shift the band gap energy threshold of the PLZT material from near-uv light to visible blue light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to these positive ions of sufficient density and with sufficient energy to provide an image. The PLZT material may have a lanthanum content ranging from 5 to 10%; a lead zirconate content ranging from 62 to 70 mole %; and a lead titanate content ranging from 38 to 30%. The region of ion implantation is in a range from 0.1 to 2 microns below the surface of the PLZT plate. Density of ions is in the range from 1 x 10/sup 12/ to 1 x 10/sup 17/ ions/cm/sup 2/ and having an energy in the range from 100 to 500 keV.

Potential biomedical applications of ion beam technology

NASA Technical Reports Server (NTRS)

Banks, B. A.; Weigand, A. J.; Babbush, C. A.; Vankampen, C. L.

1976-01-01

Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic pros-thesis fixtion, and dental implants.

Potential biomedical applications of ion beam technology

NASA Technical Reports Server (NTRS)

Banks, B. A.; Weigand, A. J.; Van Kampen, C. L.; Babbush, C. A.

1976-01-01

Electron bombardment ion thrusters used as ion sources have demonstrated a unique capability to vary the surface morphology of surgical implant materials. The microscopically rough surface texture produced by ion beam sputtering of these materials may result in improvements in the biological response and/or performance of implanted devices. Control of surface roughness may result in improved attachment of the implant to soft tissue, hard tissue, bone cement, or components deposited from blood. Potential biomedical applications of ion beam texturing discussed include: vascular prostheses, artificial heart pump diaphragms, pacemaker fixation, percutaneous connectors, orthopedic prosthesis fixation, and dental implants.

Mechanical stresses and amorphization of ion-implanted diamond

NASA Astrophysics Data System (ADS)

Khmelnitsky, R. A.; Dravin, V. A.; Tal, A. A.; Latushko, M. I.; Khomich, A. A.; Khomich, A. V.; Trushin, A. S.; Alekseev, A. A.; Terentiev, S. A.

2013-06-01

Scanning white light interferometry and Raman spectroscopy were used to investigate the mechanical stresses and structural changes in ion-implanted natural diamonds with different impurity content. The uniform distribution of radiation defects in implanted area was obtained by the regime of multiple-energy implantation of keV He+ ions. A modification of Bosia's et al. (Nucl. Instrum. Meth. B 268 (2010) 2991) method for determining the internal stresses and the density variation in an ion-implanted diamond layer was proposed that suggests measuring, in addition to the surface swelling of a diamond plate, the radius of curvature of the plate. It is shown that, under multiple-energy implantation of He+, mechanical stresses in the implanted layer may be as high as 12 GPa. It is shown that radiation damage reaches saturation for the implantation fluence characteristic of amorphization of diamond but is appreciably lower than the graphitization threshold.

Study of the effects of E × B fields as mechanism to carbon-nitrogen plasma immersion ion implantation on stainless steel samples

NASA Astrophysics Data System (ADS)

Pillaca, E. J. D. M.; Ueda, M.; Oliveira, R. M.; Pichon, L.

2014-08-01

Effects of E × B fields as mechanism to carbon-nitrogen plasma immersion ion implantation (PIII) have been investigated. This magnetic configuration when used in PIII allows obtaining high nitrogen plasma density close to the ion implantation region. Consequently, high ions dose on the target is possible to be achieved compared with standard PIII. In this scenario, nitrogen and carbon ions were implanted simultaneously on stainless steel, as measured by GDOES and detected by X-ray diffraction. Carbon-tape disposed on the sample-holder was sputtered by intense bombardment of nitrogen ions, being the source of carbon atoms in this experiment. The implantation of both N and C caused changes on sample morphology and improvement of the tribological properties of the stainless steel.

Deformation characteristics of the near-surface layers of zirconia ceramics implanted with aluminum ions

NASA Astrophysics Data System (ADS)

Ghyngazov, S. A.; Vasiliev, I. P.; Frangulyan, T. S.; Chernyavski, A. V.

2015-10-01

The effect of ion treatment on the phase composition and mechanical properties of the near-surface layers of zirconium ceramic composition 97 ZrO2-3Y2O3 (mol%) was studied. Irradiation of the samples was carried out by accelerated ions of aluminum with using vacuum-arc source Mevva 5-Ru. Ion beam had the following parameters: the energy of the accelerated ions E = 78 keV, the pulse current density Ji = 4mA / cm2, current pulse duration equal τ = 250 mcs, pulse repetition frequency f = 5 Hz. Exposure doses (fluence) were 1016 и 1017 ion/cm2. The depth distribution implanted ions was studied by SIMS method. It is shown that the maximum projected range of the implanted ions is equal to 250 nm. Near-surface layers were investigated by X-ray diffraction (XRD) at fixed glancing incidence angle. It is shown that implantation of aluminum ions into the ceramics does not lead to a change in the phase composition of the near-surface layer. The influence of implanted ions on mechanical properties of ceramic near-surface layers was studied by the method of dynamic nanoindentation using small loads on the indenter P=300 mN. It is shown that in ion- implanted ceramic layer the processes of material recovery in the deformed region in the unloading mode proceeds with higher efficiency as compared with the initial material state. The deformation characteristics of samples before and after ion treatment have been determined from interpretation of the resulting P-h curves within the loading and unloading sections by the technique proposed by Oliver and Pharr. It was found that implantation of aluminum ions in the near-surface layer of zirconia ceramics increases nanohardness and reduces the Young's modulus.

VO.sub.2 precipitates for self-protected optical surfaces

DOEpatents

Gea, Laurence A.; Boatner, Lynn A.

1999-01-01

A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al.sub.2 O.sub.3), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO.sub.2 precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al.sub.2 O.sub.3 host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at .about.77.degree. C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally "switchable" surface region on Al.sub.2 O.sub.3.

The effect of ions on the magnetic moment of vacancy for ion-implanted 4H-SiC

NASA Astrophysics Data System (ADS)

Peng, B.; Zhang, Y. M.; Dong, L. P.; Wang, Y. T.; Jia, R. X.

2017-04-01

The structural properties and the spin states of vacancies in ion implanted silicon carbide samples are analyzed by experimental measurements along with first-principles calculations. Different types and dosages of ions (N+, O+, and B+) were implanted in the 4H-silicon carbide single crystal. The Raman spectra, positron annihilation spectroscopy, and magnetization-magnetic field curves of the implanted samples were measured. The fitting results of magnetization-magnetic field curves reveal that samples implanted with 1 × 1016 cm-2 N+ and O+ ions generate paramagnetic centers with various spin states of J = 1 and J = 0.7, respectively. While for other implanted specimens, the spin states of the paramagnetic centers remain unchanged compared with the pristine sample. According to the positron annihilation spectroscopy and first-principles calculations, the change in spin states originates from the silicon vacancy carrying a magnetic moment of 3.0 μB in the high dosage N-implanted system and 2.0 μB in the O-doped system. In addition, the ratio of the concentration of implanted N ions and silicon vacancies will affect the magnetic moment of VSi. The formation of carbon vacancy which does not carry a local magnetic moment in B-implanted SiC can explain the invariability in the spin states of the paramagnetic centers. These results will help to understand the magnetic moments of vacancies in ion implanted 4H-SiC and provide a possible routine to induce vacancies with high spin states in SiC for the application in quantum technologies and spintronics.

Optical planar waveguides in photo-thermal-refractive glasses fabricated by single- or double-energy carbon ion implantation

NASA Astrophysics Data System (ADS)

Wang, Yue; Shen, Xiao-Liang; Zheng, Rui-Lin; Guo, Hai-Tao; Lv, Peng; Liu, Chun-Xiao

2018-01-01

Ion implantation has demonstrated to be an efficient and reliable technique for the fabrication of optical waveguides in a diversity of transparent materials. Photo-thermal-refractive glass (PTR) is considered to be durable and stable holographic recording medium. Optical planar waveguide structures in the PTR glasses were formed, for the first time to our knowledge, by the C3+-ion implantation with single-energy (6.0 MeV) and double-energy (5.5+6.0 MeV), respectively. The process of the carbon ion implantation was simulated by the stopping and range of ions in matter code. The morphologies of the waveguides were recorded by a microscope operating in transmission mode. The guided beam distributions of the waveguides were measured by the end-face coupling technique. Comparing with the single-energy implantation, the double-energy implantation improves the light confinement for the dark-mode spectrum. The guiding properties suggest that the carbon-implanted PTR glass waveguides have potential for the manufacture of photonic devices.

Pulsed source ion implantation apparatus and method

DOEpatents

Leung, Ka-Ngo

1996-01-01

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

Production technology for high efficiency ion implanted solar cells

NASA Technical Reports Server (NTRS)

Kirkpatrick, A. R.; Minnucci, J. A.; Greenwald, A. C.; Josephs, R. H.

1978-01-01

Ion implantation is being developed for high volume automated production of silicon solar cells. An implanter designed for solar cell processing and able to properly implant up to 300 4-inch wafers per hour is now operational. A machine to implant 180 sq m/hr of solar cell material has been designed. Implanted silicon solar cells with efficiencies exceeding 16% AM1 are now being produced and higher efficiencies are expected. Ion implantation and transient processing by pulsed electron beams are being integrated with electrostatic bonding to accomplish a simple method for large scale, low cost production of high efficiency solar cell arrays.

Photosensitivity enhancement of PLZT ceramics by positive ion implantation

DOEpatents

Land, Cecil E.; Peercy, Paul S.

1983-01-01

The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H.sup.+, He.sup.+, Ne.sup.+, Ar.sup.+, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1.times.10.sup.12 to 1.times.10.sup.17, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

Heavy doping of CdTe single crystals by Cr ion implantation

NASA Astrophysics Data System (ADS)

Popovych, Volodymyr D.; Böttger, Roman; Heller, Rene; Zhou, Shengqiang; Bester, Mariusz; Cieniek, Bogumil; Mroczka, Robert; Lopucki, Rafal; Sagan, Piotr; Kuzma, Marian

2018-03-01

Implantation of bulk CdTe single crystals with high fluences of 500 keV Cr+ ions was performed to achieve Cr concentration above the equilibrium solubility limit of this element in CdTe lattice. The structure and composition of the implanted samples were studied using secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) to characterize the incorporation of chromium into the host lattice and to investigate irradiation-induced damage build-up. It was found that out-diffusion of Cr atoms and sputtering of the targets alter the depth distribution and limit concentration of the projectile ions in the as-implanted samples. Appearance of crystallographically oriented, metallic α-Cr nanoparticles inside CdTe matrix was found after implantation, as well as a strong disorder at the depth far beyond the projected range of the implanted ions.

Structural evolution in Ar+ implanted Si-rich silicon oxide

NASA Astrophysics Data System (ADS)

Brusa, R. S.; Karwasz, G. P.; Mariotto, G.; Zecca, A.; Ferragut, R.; Folegati, P.; Dupasquier, A.; Ottaviani, G.; Tonini, R.

2003-12-01

Silicon-rich silicon oxide films were deposited by plasma-enhanced chemical vapor deposition. Energy was released into the film by ion bombardment, with the aim of promoting formation of Si nanoclusters and reordering the oxide matrix. The effect of the initial stoichiometry, as well as the evolution of the oxide films due to the ion bombardment and to subsequent thermal treatments, has been studied by depth-resolved positron annihilation Doppler spectroscopy, Raman scattering and Fourier transform infrared spectroscopy. As-deposited films were found to contain an open volume fraction in the form of subnanometric cavities that are positively correlated with oxygen deficiency. No Si aggregates were observed. The ion bombardment was found to promote the formation of amorphous Si nanoclusters, together with a reduction of the open volume in the matrix and a substantial release of hydrogen. It also leaves electrically active sites in the oxide and produces gas-filled vacancy defects in the substrate, with the concentrations depending on the implantation temperature. Thermal treatment at 500 °C removes charge defects in the oxide, but vacancy defects are not completely annealed even at 1100 °C. In one case, heating at 1100 °C produced cavities of about 0.6 nm in the oxide. Transformation of Si nanoclusters into nanocrystals is observed to occur from 800 °C.

Hybrid Donor-Dot Devices made using Top-down Ion Implantation for Quantum Computing

NASA Astrophysics Data System (ADS)

Bielejec, Edward; Bishop, Nathan; Carroll, Malcolm

2012-02-01

We present progress towards fabricating hybrid donor -- quantum dots (QD) for quantum computing. These devices will exploit the long coherence time of the donor system and the surface state manipulation associated with a QD. Fabrication requires detection of single ions implanted with 10's of nanometer precision. We show in this talk, 100% detection efficiency for single ions using a single ion Geiger mode avalanche (SIGMA) detector integrated into a Si MOS QD process flow. The NanoImplanter (nI) a focused ion beam system is used for precision top-down placement of the implanted ion. This machine has a 10 nm resolution combined with a mass velocity filter, allowing for the use of multi-species liquid metal ion sources (LMIS) to implant P and Sb ions, and a fast blanking and chopping system for single ion implants. The combination of the nI and integration of the SIGMA with the MOS QD process flow establishes a path to fabricate hybrid single donor-dot devices. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

NASA Technical Reports Server (NTRS)

Woo, D. S.

1977-01-01

Progress in developing the application of ion implantation techniques to silicon gate CMOS/SOS processing is described. All of the conventional doping techniques such as in situ doping of the epi-film and diffusion by means of doped oxides are replaced by ion implantation. Various devices and process parameters are characterized to generate an optimum process by the use of an existing SOS test array. As a result, excellent circuit performance is achieved. A general description of the all ion implantation process is presented.

Modification of the crystal structure of gadolinium gallium garnet by helium ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ostafiychuk, B. K.; Yaremiy, I. P., E-mail: yaremiy@rambler.ru; Yaremiy, S. I.

2013-12-15

The structure of gadolinium gallium garnet (GGG) single crystals before and after implantation by He{sup +} ions has been investigated using high-resolution X-ray diffraction methods and the generalized dynamic theory of X-ray scattering. The main types of growth defects in GGG single crystals and radiation-induced defects in the ion-implanted layer have been determined. It is established that the concentration of dislocation loops in the GGG surface layer modified by ion implantation increases and their radius decreases with an increase in the implantation dose.

Development of ion implanted gallium arsenide transistors

NASA Technical Reports Server (NTRS)

Hunsperger, R.; Baron, R.

1972-01-01

Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.

Effect of ion implantation on the tribology of metal-on-metal hip prostheses.

PubMed

Bowsher, John G; Hussain, Azad; Williams, Paul; Nevelos, Jim; Shelton, Julia C

2004-12-01

Nitrogen ion implantation (which considerably hardens the surface of the bearing) may represent one possible method of reducing the wear of metal-on-metal (MOM) hip bearings. Currently there are no ion-implanted MOM bearings used clinically. Therefore a physiological hip simulator test was undertaken using standard test conditions, and the results compared to previous studies using the same methods. N2-ion implantation of high carbon cast Co-Cr-Mo-on-Co-Cr-Mo hip prostheses increased wear by 2-fold during the aggressive running-in phase compared to untreated bearing surfaces, plus showing no wear reductions during steady-state conditions. Although 2 specimens were considered in the current study, it would appear that ion implantation has no clinical benefit for MOM.

Surface modification by carbon ion implantation for the application of ni-based amorphous alloys as bipolar plate in proton exchange membrane fuel cells

NASA Astrophysics Data System (ADS)

Kim, Min-Uk; Kim, Do-Hyang; Han, Seung-hee; Fleury, Eric; Seok, Hyun-Kwang; Cha, Pil-Ryung; Kim, Yu-Chan

2011-04-01

Ni-based amorphous alloys with surface modification by carbon ion implantation are proposed as an alternative bipolar plate material for polymer electrolyte membrane fuel cells (PEMFCs). Both Ni60Nb20Ti10Zr10 alloys with and without carbon ion implantation have corrosion resistance as good as graphite as well as much lower contact resistance than 316L stainless steel in the PEMFC environment. The formation of conductive surface carbide due to carbon ion implantation results in a decrease in the contact resistance to a level comparable to that of graphite. This combination of excellent properties indicates that carbon ion implanted Ni-based amorphous alloys can be potential candidate materials for bipolar plates in PEMFCs.

Simulations of Proton Implantation in Silicon Carbide (SiC)

DTIC Science & Technology

2016-03-31

ions in matter (SRIM); transport of ions in matter (TRIM); ion energy; implant depth; defect generation; vacancy; backscattered ions; sputtering...are computer simulations based on transport of ions in matter (TRIM), and stopping and range of ions in matter (SRIM). TRIM is a Monte Carlo

Ion beam sputter modification of the surface morphology of biological implants

NASA Technical Reports Server (NTRS)

Weigand, A. J.; Banks, B. A.

1976-01-01

The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion beam sputtered surfaces.

Ion-beam-sputter modification of the surface morphology of biological implants

NASA Technical Reports Server (NTRS)

Weigand, A. J.; Banks, B. A.

1977-01-01

The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion-beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron-bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion-beam-sputtered surfaces.

Pulsed source ion implantation apparatus and method

DOEpatents

Leung, K.N.

1996-09-24

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.

Radiation Damage Formation And Annealing In Mg-Implanted GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Whelan, Sean; Kelly, Michael J.; Yan, John

2005-06-30

We have implanted GaN with Mg ions over an energy range of 200keV to 1MeV at substrate temperatures of -150 (cold) and +300 deg. C (hot). The radiation damage formation in GaN was increased for cold implants when compared to samples implanted at elevated temperatures. The increase in damage formation is due to a reduction in the dynamic defect annealing during ion irradiation. The dopant stopping in the solid also depends upon the implant temperature. For a fixed implant energy and dose, Mg ions have a shorter range in GaN for cold implants when compared to hot implants which ismore » caused by the increase in scattering centres (disorder)« less

Formation of Porous Germanium Layers by Silver-Ion Implantation

NASA Astrophysics Data System (ADS)

Stepanov, A. L.; Vorob'ev, V. V.; Nuzhdin, V. I.; Valeev, V. F.; Osin, Yu. N.

2018-04-01

We propose a method for the formation of porous germanium ( P-Ge) layers containing silver nanoparticles by means of high-dose implantation of low-energy Ag+ ions into single-crystalline germanium ( c-Ge). This is demonstrated by implantation of 30-keV Ag+ ions into a polished c-Ge plate to a dose of 1.5 × 1017 ion/cm2 at an ion beam-current density of 5 μA/cm2. Examination by high-resolution scanning electron microscopy (SEM), atomic-force microscopy (AFM), X-ray diffraction (XRD), energy-dispersive X-ray (EDX) microanalysis, and reflection high-energy electron diffraction (RHEED) showed that the implantation of silver ions into c-Ge surface led to the formation of a P-Ge layer with spongy structure comprising a network of interwoven nanofibers with an average diameter of ˜10-20 nm Ag nanoparticles on the ends of fibers. It is also established that the formation of pores during Ag+ ion implantation is accompanied by effective sputtering of the Ge surface.

Small-scale characterisation of irradiated nuclear materials: Part II nanoindentation and micro-cantilever testing of ion irradiated nuclear materials

NASA Astrophysics Data System (ADS)

Armstrong, D. E. J.; Hardie, C. D.; Gibson, J. S. K. L.; Bushby, A. J.; Edmondson, P. D.; Roberts, S. G.

2015-07-01

This paper demonstrates the ability of advanced micro-mechanical testing methods, based on FIB machined micro-cantilevers, to measure the mechanical properties of ion implanted layers without the influence of underlying unimplanted material. The first section describes a study of iron-12 wt% chromium alloy implanted with iron ions. It is shown that by careful cantilever design and finite element modelling that changes in yield stress after implantation can be measured even with the influence of a strong size effect. The second section describes a study of tungsten implanted with both tungsten ions and tungsten and helium ions using spherical and sharp nanoindentation, and micro-cantilevers. The spherical indentation allows yield properties and work hardening behaviour of the implanted layers to be measured. However the brittle nature of the implanted tungsten is only revealed when using micro-cantilevers. This demonstrates that when applying micro-mechanical methods to ion implanted layers care is needed to understand the nature of size effects, careful modelling of experimental procedure is required and multiple experimental techniques are needed to allow the maximum amount of mechanical behaviour information to be collected.

High Curie temperature drive layer materials for ion-implanted magnetic bubble devices

NASA Technical Reports Server (NTRS)

Fratello, V. J.; Wolfe, R.; Blank, S. L.; Nelson, T. J.

1984-01-01

Ion implantation of bubble garnets can lower the Curie temperature by 70 C or more, thus limiting high temperature operation of devices with ion-implanted propagation patterns. Therefore, double-layer materials were made with a conventional 2-micron bubble storage layer capped by an ion-implantable drive layer of high Curie temperature, high magnetostriction material. Contiguous disk test patterns were implanted with varying doses of a typical triple implant. Quality of propagation was judged by quasistatic tests on 8-micron period major and minor loops. Variations of magnetization, uniaxial anisotropy, implant dose, and magnetostriction were investigated to ensure optimum flux matching, good charged wall coupling, and wide operating margins. The most successful drive layer compositions were in the systems (SmDyLuCa)3(FeSi)5O12 and (BiGdTmCa)3(FeSi)5O12 and had Curie temperatures 25-44 C higher than the storage layers.

Impact of nucleation of carbonaceous clusters on structural, electrical and optical properties of Cr+-implanted PMMA

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Rafique, M. Shahid; Saleemi, Farhat; Naab, Fabian; Toader, Ovidiu; Mahmood, Arshad; Aziz, Uzma

2016-09-01

Specimens of polymethylmethacrylate (PMMA) have been implanted with 400 keV Cr+ ions at different ion fluences ranging from 5 × 1013 to 5 × 1015 ions/cm2. The possible chemical reactions involved in the nucleation of conjugated carbonaceous clusters in implanted PMMA are discussed. Furthermore, impact of formation of carbonaceous clusters on structural, optical, electrical and morphological properties of implanted PMMA has been examined. The structural modifications in implanted PMMA are observed by Raman spectroscopy. The variation in optical band gap and Urbach energy is measured using UV-visible spectroscopic analysis. The effects of Cr+ ion implantation on electrical and morphological properties are investigated by four-probe apparatus and atomic force microscopy, respectively. The Raman spectroscopic analysis confirmed the formation of carbonaceous clusters with the transformation of implanted layer of PMMA into amorphous carbon. Simultaneously, the optical band gap of implanted PMMA has reduced from 3.13 to 0.85 eV. The increase in Urbach energy favors the decline in band gap together with the structural modification in implanted PMMA. As a result of Cr+ ion implantation, the electrical conductivity of PMMA has improved from 2.14 ± 0.06 × 10-10 S/cm (pristine) to 7.20 ± 0.36 × 10-6 S/cm. The AFM images revealed a decrease in surface roughness with an increment in ion fluence up to 5 × 1014 ions/cm2. The modification in the electrical, optical and structural properties makes the PMMA a promising candidate for its future utilization, as a semiconducting and optically active material, in various fields like plastic electronics and optoelectronic devices.

ITEP MEVVA ion beam for rhenium silicide production.

PubMed

Kulevoy, T; Gerasimenko, N; Seleznev, D; Kropachev, G; Kozlov, A; Kuibeda, R; Yakushin, P; Petrenko, S; Medetov, N; Zaporozhan, O

2010-02-01

The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Genisel, Mustafa Fatih; Uddin, Md. Nizam; Say, Zafer

2011-10-01

In this study, we implanted N{sup +} and N{sub 2}{sup +} ions into sputter deposited amorphous boron carbide (a-BC) and diamond like carbon (DLC) thin films in an effort to understand the chemical bonding involved and investigate possible phase separation routes in boron carbon nitride (BCN) films. In addition, we investigated the effect of implanted C{sup +} ions in sputter deposited amorphous boron nitride (a-BN) films. Implanted ion energies for all ion species were set at 40 KeV. Implanted films were then analyzed using x-ray photoelectron spectroscopy (XPS). The changes in the chemical composition and bonding chemistry due to ion-implantationmore » were examined at different depths of the films using sequential ion-beam etching and high resolution XPS analysis cycles. A comparative analysis has been made with the results from sputter deposited BCN films suggesting that implanted nitrogen and carbon atoms behaved very similar to nitrogen and carbon atoms in sputter deposited BCN films. We found that implanted nitrogen atoms would prefer bonding to carbon atoms in the films only if there is no boron atom in the vicinity or after all available boron atoms have been saturated with nitrogen. Implanted carbon atoms also preferred to either bond with available boron atoms or, more likely bonded with other implanted carbon atoms. These results were also supported by ab-initio density functional theory calculations which indicated that carbon-carbon bonds were energetically preferable to carbon-boron and carbon-nitrogen bonds.« less

Role of stresses in annealing of ion-implantation damage in Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seshan, K.; EerNisse, E.P.

Recent results showing a crystallographic orientation dependence of growth kinetics, secondary defects, and stress relief in annealing of ion-implanted Si are shown to be self-consistent if interpreted in terms of the influence of stresses upon annealing processes. The stress influence proposed is microplastic shear which is induced in (112) directions on (111) planes inclined to the implant surface by the biaxial stress created in the implant region by ion-implantation damage. The shear stresses are shown to be dependent on crystallographic orientation in a manner consistent with the model.

Influence of ion source configuration and its operation parameters on the target sputtering and implantation process.

PubMed

Shalnov, K V; Kukhta, V R; Uemura, K; Ito, Y

2012-06-01

In the work, investigation of the features and operation regimes of sputter enhanced ion-plasma source are presented. The source is based on the target sputtering with the dense plasma formed in the crossed electric and magnetic fields. It allows operation with noble or reactive gases at low pressure discharge regimes, and, the resulting ion beam is the mixture of ions from the working gas and sputtering target. Any conductive material, such as metals, alloys, or compounds, can be used as the sputtering target. Effectiveness of target sputtering process with the plasma was investigated dependently on the gun geometry, plasma parameters, and the target bias voltage. With the applied accelerating voltage from 0 to 20 kV, the source can be operated in regimes of thin film deposition, ion-beam mixing, and ion implantation. Multi-component ion beam implantation was applied to α-Fe, which leads to the surface hardness increasing from 2 GPa in the initial condition up to 3.5 GPa in case of combined N(2)-C implantation. Projected range of the implanted elements is up to 20 nm with the implantation energy 20 keV that was obtained with XPS depth profiling.

Ion implantation of highly corrosive electrolyte battery components

DOEpatents

Muller, R.H.; Zhang, S.

1997-01-14

A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, and sodium sulfur. 6 figs.

Ion implantation of highly corrosive electrolyte battery components

DOEpatents

Muller, Rolf H.; Zhang, Shengtao

1997-01-01

A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, end sodium sulfur.

Passivated contact formation using ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, David L.; Stradins, Pauls; Nemeth, William

2018-05-29

Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

Electronic excitation effects on nanoparticle formation in insulators under heavy-ion implantation

NASA Astrophysics Data System (ADS)

Kishimoto, N.; Plaksin, O. A.; Masuo, K.; Okubo, N.; Umeda, N.; Takeda, Y.

2006-01-01

Kinetic processes of nanoparticle formation by ion implantation was studied for the insulators of a-SiO2, LiNbO3, MgO · 2.4(Al2O3) and PMMA, either by changing ion flux or by using a co-irradiation technique of ions and photons. Under Cu-implantation of 60 keV Cu-, nanoparticles spontaneously formed without thermal annealing, indicating radiation-induced diffusion of implants. The high-flux implantation caused instable behaviors of nanoparticle morphology in a-SiO2, LiNbO3 and PMMA, i.e. enhanced atomic rearrangement or loss of nanoparticles. The spinel MgO · 2.4(Al2O3) also showed nanoparticle precipitation at 60 keV, but the precipitation tendency is less than the others. Combined irradiation of 3 MeV Cu ions and photons of 2.3 eV or 3.5 eV indicates that the electronic excitation during ion implantation significantly enhances nanoparticle precipitation, greatly depending on photon energy and fluence. The selectivity for photons can be applied to control nanoparticle precipitation.

The effects of argon ion bombardment on the corrosion resistance of tantalum

NASA Astrophysics Data System (ADS)

Ramezani, A. H.; Sari, A. H.; Shokouhy, A.

2017-02-01

Application of ion beam has been widely used as a surface modification method to improve surface properties. This paper investigates the effect of argon ion implantation on surface structure as well as resistance against tantalum corrosion. In this experiment, argon ions with energy of 30 keV and in doses of 1 × 1017-10 × 1017 ions/cm2 were used. The surface bombardment with inert gases mainly produces modified topography and morphology of the surface. Atomic Force Microscopy was also used to patterned the roughness variations prior to and after the implantation phase. Additionally, the corrosion investigation apparatus wear was applied to compare resistance against tantalum corrosion both before and after ion implantation. The results show that argon ion implantation has a substantial impact on increasing resistance against tantalum corrosion. After the corrosion test, scanning electron microscopy (SEM) analyzed the samples' surface morphologies. In addition, the elemental composition is characterized by energy-dispersive X-ray (EDX) analysis. The purpose of this paper was to obtain the perfect condition for the formation of tantalum corrosion resistance. In order to evaluate the effect of the ion implantation on the corrosion behavior, potentiodynamic tests were performed. The results show that the corrosion resistance of the samples strongly depends on the implantation doses.

Crater function moments: Role of implanted noble gas atoms

NASA Astrophysics Data System (ADS)

Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

2018-04-01

Spontaneous pattern formation by energetic ion beams is usually explained in terms of surface-curvature dependent sputtering and atom redistribution in the target. Recently, the effect of ion implantation on surface stability has been studied for nonvolatile ion species, but for the case of noble gas ion beams it has always been assumed that the implanted atoms can be neglected. In this work, we show by molecular dynamics (MD) and Monte Carlo (MC) simulations that this assumption is not valid in a wide range of implant conditions. Sequential-impact MD simulations are performed for 1-keV Ar, 2-keV Kr, and 2-keV Xe bombardments of Si, starting with a pure single-crystalline Si target and running impacts until sputtering equilibrium has been reached. The simulations demonstrate the importance of the implanted ions for crater-function estimates. The atomic volumes of Ar, Kr, and Xe in Si are found to be a factor of two larger than in the solid state. To extend the study to a wider range of energies, MC simulations are performed. We find that the role of the implanted ions increases with the ion energy although the increase is attenuated for the heavier ions. The analysis uses the crater function formalism specialized to the case of sputtering equilibrium.

Ion implantation in group III-nitride semiconductors: a tool for doping and defect studies

NASA Astrophysics Data System (ADS)

Zolper, J. C.

1997-06-01

Ion implantation is a flexible process technology for introducing an array of doping or compensating impurities into semiconductors. As the crystal quality of the group III-nitride materials continues to improve, ion implantation is playing an enabling role in exploring new dopant species and device structures. In this paper we review the recent developments in ion implantation processing of these materials with a particular emphasis on how this technology has brought new understanding to this materials system. In particular, the use of ion implantation to characterize impurity luminescence, doping, and compensation in III-nitride materials is reviewed. In addition, we address the nature of implantation induced damage in GaN which demonstrates a very strong resistance to amorphization while at the same time forming damage that is not easily removed by thermal annealing. Finally, we review the coupling of implantation with high temperature rapid thermal annealing to better understand the thermal stability of these materials and the redistribution properties of the common dopant (Si, O, Be, Mg, Ca, and Zn).

Improvement of in vitro corrosion and cytocompatibility of biodegradable Fe surface modified by Zn ion implantation

NASA Astrophysics Data System (ADS)

Wang, Henan; Zheng, Yang; Li, Yan; Jiang, Chengbao

2017-05-01

Pure Fe was surface-modified by Zn ion implantation to improve the biodegradable behavior and cytocompatibility. Surface topography, chemical composition, corrosion resistance and cytocompatibility were investigated. Atomic force microscopy, auger electron spectroscopy and X-ray photoelectron spectroscopy results showed that Zn was implanted into the surface of pure Fe in the depth of 40-60 nm and Fe2O3/ZnO oxides were formed on the outmost surface. Electrochemical measurements and immersion tests revealed an improved degradable behavior for the Zn-implanted Fe samples. An approximately 12% reduction in the corrosion potential (Ecorr) and a 10-fold increase in the corrosion current density (icorr) were obtained after Zn ion implantation with a moderate incident ion dose, which was attributed to the enhanced pitting corrosion. The surface free energy of pure Fe was decreased by Zn ion implantation. The results of direct cell culture indicated that the short-term (4 h) cytocompatibility of MC3T3-E1 cells was promoted by the implanted Zn on the surface.

Dose Control System in the Optima XE Single Wafer High Energy Ion Implanter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Satoh, Shu; Yoon, Jongyoon; David, Jonathan

2011-01-07

Photoresist outgassing can significantly compromise accurate dosimetry of high energy implants. High energy implant even at a modest beam current produces high beam powers which create significantly worse outgassing than low and medium energy implants and the outgassing continues throughout the implant due to the low dose in typical high energy implant recipes. In the previous generation of high energy implanters, dose correction by monitoring of process chamber pressure during photoresist outgassing has been used. However, as applications diversify and requirements change, the need arises for a more versatile photoresist correction system to match the versatility of a single wafermore » high energy ion implanter. We have successfully developed a new dosimetry system for the Optima XE single wafer high energy ion implanter which does not require any form of compensation due to the implant conditions. This paper describes the principles and performance of this new dose system.« less

The Breeding of a Pigment Mutant Strain of Steroid Hydroxylation Aspergillus Flavus by Low Energy Ion Implantation

NASA Astrophysics Data System (ADS)

Ye, Hui; Ma, Jingming; Feng, Chun; Cheng, Ying; Zhu, Suwen; Cheng, Beijiu

2009-02-01

In the process of the fermentation of steroid C11α-hydroxylgenation strain Aspergillus flavus AF-ANo208, a red pigment is derived, which will affect the isolation and purification of the target product. Low energy ion beam implantation is a new tool for breeding excellent mutant strains. In this study, the ion beam implantation experiments were performed by infusing two different ions: argon ion (Ar+) and nitrogen ion (N+). The results showed that the optimal ion implantation was N+ with an optimum dose of 2.08 × 1015 ions/cm2, with which the mutant strain AF-ANm16 that produced no red pigment was obtained. The strain had high genetic stability and kept the strong capacity of C11α-hydroxylgenation, which could be utilized in industrial fermentation. The differences between the original strain and the mutant strain at a molecular level were analyzed by randomly amplified polymorphic DNA (RAPD). The results indicated that the frequency of variation was 7.00%, which would establish the basis of application investigation into the breeding of pigment mutant strains by low energy ion implantation.

Ion-implanted planar-buried-heterostructure diode laser

DOEpatents

Brennan, Thomas M.; Hammons, Burrell E.; Myers, David R.; Vawter, Gregory A.

1991-01-01

A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

Grain size effect on yield strength of titanium alloy implanted with aluminum ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popova, Natalya, E-mail: natalya-popova-44@mail.ru; Institute of Strength Physics and Materials Science, SB RAS, 2/4, Akademicheskii Ave., 634021, Tomsk; Nikonenko, Elena, E-mail: vilatomsk@mail.ru

2016-01-15

The paper presents a transmission electron microscopy (TEM) study of the microstructure and phase state of commercially pure titanium VT1-0 implanted by aluminum ions. This study has been carried out before and after the ion implantation for different grain size, i.e. 0.3 µm (ultra-fine grain condition), 1.5 µm (fine grain condition), and 17 µm (polycrystalline condition). This paper presents details of calculations and analysis of strength components of the yield stress. It is shown that the ion implantation results in a considerable hardening of the entire thickness of the implanted layer in the both grain types. The grain size has, however, a differentmore » effect on the yield stress. So, both before and after the ion implantation, the increase of the grain size leads to the decrease of the alloy hardening. Thus, hardening in ultra-fine and fine grain alloys increased by four times, while in polycrystalline alloy it increased by over six times.« less

Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

NASA Technical Reports Server (NTRS)

Spitzer, M. B.

1983-01-01

The objective of this program is the investigation and evaluation of the capabilities of the ion implantation process for the production of photovoltaic cells from a variety of present-day, state-of-the-art, low-cost silicon sheet materials. Task 1 of the program concerns application of ion implantation and furnace annealing to fabrication of cells made from dendritic web silicon. Task 2 comprises the application of ion implantation and pulsed electron beam annealing (PEBA) to cells made from SEMIX, SILSO, heat-exchanger-method (HEM), edge-defined film-fed growth (EFG) and Czochralski (CZ) silicon. The goals of Task 1 comprise an investigation of implantation and anneal processes applied to dendritic web. A further goal is the evaluation of surface passivation and back surface reflector formation. In this way, processes yielding the very highest efficiency can be evaluated. Task 2 seeks to evaluate the use of PEBA for various sheet materials. A comparison of PEBA to thermal annealing will be made for a variety of ion implantation processes.

The center for production of single-photon emitters at the electrostatic-deflector line of the Tandem accelerator of LABEC (Florence)

NASA Astrophysics Data System (ADS)

Lagomarsino, Stefano; Sciortino, Silvio; Gelli, Nicla; Flatae, Assegid M.; Gorelli, Federico; Santoro, Mario; Chiari, Massimo; Czelusniac, Caroline; Massi, Mirko; Taccetti, Francesco; Agio, Mario; Giuntini, Lorenzo

2018-05-01

The line for the pulsed beam of the 3 MeV Tandetron accelerator at LABEC (Florence) has been upgraded for ion implantation experiments aiming at the fabrication of single-photon emitters in a solid-state matrix. A system based on Al attenuators has been calibrated in order to extend the energy range of the implanted ions from MeV down to the tens of keV. A new motorized XY stage has been installed in the implantation chamber for achieving ultra-fine control on the position of each implanted ion, allowing to reach the scale imposed by lateral straggling. A set-up for the activation of the implanted ions has been developed, based on an annealing furnace operating under controlled high-vacuum conditions. The first experiments have been performed with silicon ions implanted in diamond and the luminescent signal of the silicon-vacancy (SiV) center, peaked at 738 nm, has been observed for a wide range of implantation fluences (108 ÷ 1015 cm-2) and implantation depths (from a few nm to 2.4 μm). Studies on the efficiency of the annealing process have been performed and the activation yield has been measured to range from 1% to 3%. The implantation and annealing facility has thus been tuned for the production of SiV centers in diamond, but is in principle suitable for other ion species and solid-state matrices.

Long-range effect of ion implantation of Raex and Hardox steels

NASA Astrophysics Data System (ADS)

Budzyński, P.; Kamiński, M.; Droździel, A.; Wiertel, M.

2016-09-01

Ion implantation involves introduction of ionized atoms of any element (nitrogen) to metals thanks to the high kinetic energy that they acquired in the electric field. The distribution of nitrogen ions implanted at E = 65 keV energy and D = 1.1017 N+ /cm2 fluence in the steel sample and vacancies produced by them was calculated using the SRIM program. This result was confirmed by RBS measurements. The initial maximum range of the implanted nitrogen ions is ∼⃒0.17 μm. This value is relatively small compared to the influence of nitriding on the thickness surface layer of modified steel piston rings. Measurements of the friction coefficient during the pin-on-disc tribological test were performed under dry friction conditions. The friction coefficient of the implanted sample increased to values characteristic of an unimplanted sample after ca. 1500 measurement cycles. The depth of wear trace is ca. 2.4 μm. This implies that the thickness of the layer modified by the implantation process is ∼⃒2.4 μm and exceeds the initial range of the implanted ions by an order of magnitude. This effect, referred to as a long-range implantation effect, is caused by migration of vacancies and nitrogen atoms into the sample. This phenomenon makes ion implantation a legitimate process of modification of the surface layer in order to enhance the tribological properties of critical components of internal combustion engines such as steel piston rings.

Ion implantation of indium gallium arsenide

NASA Astrophysics Data System (ADS)

Almonte, Marlene Isabel

The ternary compound In0.53Ga0.47As, lattice-matched to Inp, is a semiconductor alloy of technological importance for numerous electronic and optoelectronic device applications. One of these applications includes photodiodes to be developed for the 1.3--1.55 mum wavelength range where silica fibers have their lowest optical loss. With a rapid increase in its use there is an essential need to understand the effects of ion implantation of this alloy semiconductor for implant isolation purposes in which highly resistive layers are required. Due to the small band gap (0.75 eV at 300K) of In0.53Ga0.47As, the estimated maximum resistivity is of the order of 1000 O-cm. Implant isolation can be achieved by the implantation of either inert noble gas ions or electrically active ions. Ion bombardment with inert species introduces defects which trap charge carriers. In the case of implant isolation by electrically active ions, the implanted impurities form an electronic level located close to the middle of the bandgap. Studies of the effects of implantation in In0.53Ga0.47 As due to damage by implantation of Ne+ ions and to compensation by implantation of Fe+ ions are reported in this thesis. The former only involves lattice damage related effects while the latter leads to damage and dopant induced compensation. From the Ne+ implantation results it appears that the damage related energy levels in In0.53 Ga0.47M produced by ion bombardment of chemically inactive species, are not sufficiently deep to lead to effective isolation. A higher resistivity of the order of 770 O-cm is achieved with Fe+ implantation, indicating that Fe introduces an energy level deep in the bandgap. The changes in the electrical properties of the layers are correlated to the lattice damage (damage induced effects) and/or the diffusion of the compensating dopants (dopant induced compensation). Structural characterization of the layers is performed with channeling Rutherford Backscattering Spectrometry (RBS). The distribution of the compensating dopants in the as-implanted and annealed layers is examined by Secondary Ion Mass Spectrometry (SIMS). SIMS analysis shows Fe out-diffusion which results in the loss of the semi-insulating electrical characteristics. To further our understanding of Fe diffusion in In0.53Ga0.47As, the diffusion coefficient of Fe is measured for the first time. The diffusivity of Fe was measured to be 4 x 10-13 cm2 s-1 at 550°C. The thermal stability of these damage and compensation induced effects producing implant isolation is discussed in detail.

Partially Ionized Beam Deposition of Silicon-Dioxide and Aluminum Thin Films - Defects Generation.

NASA Astrophysics Data System (ADS)

Wong, Justin Wai-Chow

1987-09-01

Detect formation in SiO_2 and Al thin films and interfaces were studied using a partially ionized beam (PIB) deposition technique. The evaporated species (the deposition material) were partially ionized to give an ion/atom ratio of <=q0.1% and the substrate was biased at 0-5kV during the deposition. The results suggest that due to the ion bombardment, stoichiometric SiO_2 films can be deposited at a low substrate temperature (~300 ^circC) and low oxygen pressure (<=q10^{-4} Torr). Such deposition cannot be achieved using conventional evaporation-deposition techniques. However, traps and mobile ions were observed in the oxide and local melt-down was observed when a sufficiently high electric field was applied to the film. For the PIB Al deposition on the Si substrate, stable Al/Si Schottky contact was formed when the substrate bias was <=q1kV. For a substrate bias of 2.5kV, the capacitance of the Al/Si interface increased dramatically. A model of self-ion implantation with a p-n junction created by the Al^+ ion implantation was proposed and tested to explain the increase of the interface capacitance. Several deep level states at the Al/Si interface were observed using Deep Level Transient Spectroscopy (DLTS) technique when the film was deposited at a bias of 3kV. The PIB Al films deposited on the Si substrate showed unusually strong electromigration resistance under high current density operation. This phenomenon was explained by the highly oriented microstructure of the Al films created by the self-ion bombardment during deposition. These findings show that PIB has potential applications in a number of areas, including low temperature thin film deposition, and epitaxial growth of thin films in the microelectronics thin film industry.

Modification of electrical properties of topological insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Peter Anand

Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.

Hardness depth profile of lattice strained cemented carbide modified by high-energy boron ion implantation

NASA Astrophysics Data System (ADS)

Yoshida, Y.; Matsumura, A.; Higeta, K.; Inoue, T.; Shimizu, S.; Motonami, Y.; Sato, M.; Sadahiro, T.; Fujii, K.

1991-07-01

The hardness depth profiles of cemented carbides which were implanted with high-energy B + ions have been estimated using a dynamic microhardness tester. The B + implantations into (16% Co)-cemented WC alloys were carried out under conditions where the implantation energies were 1-3 MeV and the fluences 1 × 10 17-1 × 10 18ions/cm 2. The profiles show that the implanted layer becomes harder as fluences are chosen at higher values and there is a peak at a certain depth which depends on the implantation energy. In X-ray diffraction (XRD) studies of the implanted surface the broadened refraction peaks of only WC and Co are detected and the increments of lattice strain and of residual stress in the near-surface region are observed. It is supposed that the hardening effect should be induced by an increase in residual stress produced by lattice strain. The hardness depth profile in successive implantation of ions with different energies agrees with the compounded profile of each one of the implantations. It is concluded that the hardness depth profile can be controlled under adequate conditions of implantation.

Fe doped Magnetic Nanodiamonds made by Ion Implantation.

PubMed

Chen, ChienHsu; Cho, I C; Jian, Hui-Shan; Niu, H

2017-02-09

Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

Fe doped Magnetic Nanodiamonds made by Ion Implantation

NASA Astrophysics Data System (ADS)

Chen, Chienhsu; Cho, I. C.; Jian, Hui-Shan; Niu, H.

2017-02-01

Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

The Effect of Low Energy Nitrogen Ion Implantation on Graphene Nanosheets

NASA Astrophysics Data System (ADS)

Mishra, Mukesh; Alwarappan, Subbiah; Kanjilal, Dinakar; Mohanty, Tanuja

2018-03-01

Herein, we report the effect 50 keV nitrogen ion implantation at varying fluence on the optical properties of graphene nanosheets (number of layers < 5). Initially, graphene nanosheets synthesized by the direct liquid exfoliation of graphite layers were deposited on a cleaned Si-substrate by drop cast method. These graphene nanosheets are implanted with 50 keV nitrogen-ion beam at six different fluences. Raman spectroscopic results show that the D, D' and G peak get broadened up to the nitrogen ion fluence of 1 × 1015 ions/cm2, while 2D peak of graphene nanosheets disappeared for nitrogen-ions have fluence more than 1014 ions/cm2. However, further increase of fluence causes the indistinguishable superimposition of D, D' and G peaks. Surface contact potential value analysis for ion implanted graphene nanosheets shows the increase in defect concentration from 1.15 × 1012 to 1.98 × 1014 defects/cm2 with increasing the nitrogen ion fluence, which resembles the Fermi level shift towards conduction band. XRD spectra confirmed that the crystallinity of graphene nanosheets was found to tamper with increasing fluence. These results revealed that the limit of nitrogen ion implantation resistant on the vibrational behaviors for graphene nanosheets was 1015 ions/cm2 that opens up the scope of application of graphene nanosheets in device fabrication for ion-active environment and space applications.

VO{sub 2} precipitates for self-protected optical surfaces

DOEpatents

Gea, L.A.; Boatner, L.A.

1999-03-23

A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al{sub 2}O{sub 3}), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO{sub 2} precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al{sub 2}O{sub 3} host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at ca. 77 C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally ``switchable`` surface region on Al{sub 2}O{sub 3}. 5 figs.

Physical and Tribological Characteristics of Ion-Implanted Diamond Films

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Heidger, S.; Korenyi-Both, A. L.; Jayne, D. T.; Herrera-Fierro, P.; Shogrin, B.; Wilbur, P. J.; Wu, R. L. C.; Garscadden, A.; Barnes, P. N.

1994-01-01

Unidirectional sliding friction experiments were conducted with a natural, polished diamond pin in contact with both as-deposited and carbon-ion-implanted diamond films in ultrahigh vacuum. Diamond films were deposited on silicon, silicon carbide, and silicon nitride by microwave-plasma-assisted chemical vapor deposition. The as-deposited diamond films were impacted with carbon ions at an accelerating energy of 60 keV and a current density of 50 micron A/cm(exp 2) for approximately 6 min, resulting in a dose of 1.2 x 10(exp 17) carbon ions/cm(exp 2). The results indicate that the carbon ion implantation produced a thin surface layer of amorphous, nondiamond carbon. The nondiamond carbon greatly decreased both friction and wear of the diamond films. The coefficients of friction for the carbon-ion-implanted, fine-grain diamond films were less than 0.1, factors of 20 to 30 lower than those for the as-deposited, fine-grain diamond films. The coefficients of friction for the carbon-ion-implanted, coarse-grain diamond films were approximately 0.35, a factor of five lower than those for the as-deposited, coarse-grain diamond films. The wear rates for the carbon-ion-implanted, diamond films were on the order of 10(exp -6) mm(exp 3)/Nm, factors of 30 to 80 lower than that for the as-deposited diamond films, regardless of grain size. The friction of the carbon-ion-implanted diamond films was greatly reduced because the amorphous, nondiamond carbon, which had a low shear strength, was restricted to the surface layers (less than 0.1 micron thick) and because the underlying diamond materials retained their high hardness. In conclusion, the carbon-ion-implanted, fine-grain diamond films can be used effectively as wear resistant, self-lubricating coatings for ceramics, such as silicon nitride and silicon carbide, in ultrahigh vacuum.

Effect of ion-implantation on surface characteristics of nickel titanium and titanium molybdenum alloy arch wires.

PubMed

Krishnan, Manu; Saraswathy, Seema; Sukumaran, Kalathil; Abraham, Kurian Mathew

2013-01-01

To evaluate the changes in surface roughness and frictional features of 'ion-implanted nickel titanium (NiTi) and titanium molybdenum alloy (TMA) arch wires' from its conventional types in an in-vitro laboratory set up. 'Ion-implanted NiTi and low friction TMA arch wires' were assessed for surface roughness with scanning electron microscopy (SEM) and 3 dimensional (3D) optical profilometry. Frictional forces were studied in a universal testing machine. Surface roughness of arch wires were determined as Root Mean Square (RMS) values in nanometers and Frictional Forces (FF) in grams. Mean values of RMS and FF were compared by Student's 't' test and one way analysis of variance (ANOVA). SEM images showed a smooth topography for ion-implanted versions. 3D optical profilometry demonstrated reduction of RMS values by 58.43% for ion-implanted NiTi (795.95 to 330.87 nm) and 48.90% for TMA groups (463.28 to 236.35 nm) from controls. Nonetheless, the corresponding decrease in FF was only 29.18% for NiTi and 22.04% for TMA, suggesting partial correction of surface roughness and disproportionate reduction in frictional forces with ion-implantation. Though the reductions were highly significant at P < 0.001, relations between surface roughness and frictional forces remained non conclusive even after ion-implantation. The study proved that ion-implantation can significantly reduce the surface roughness of NiTi and TMA wires but could not make a similar reduction in frictional forces. This can be attributed to the inherent differences in stiffness and surface reactivity of NiTi and TMA wires when used in combination with stainless steel brackets, which needs further investigations.

Influence of ion-implanted profiles on the performance of GaAs MESFET's and MMIC amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavlidis, D.; Cazaux, J.L.; Graffeuil, J.

1988-04-01

The RF small-signal performance of GaAs MESFET's and MMIC amplifiers as a function of various ion-implanted profiles is theoretically and experimentally investigated. Implantation energy, dose, and recess depth influence are theoretically analyzed with the help of a specially developed device simulator. The performance of MMIC amplifiers processed with various energies, doses, recess depths, and bias conditions is discussed and compared to experimental characteristics. Some criteria are finally proposed for the choice of implantation conditions and process in order to optimize the characteristics of ion-implanted FET's and to realize process-tolerant MMIC amplifiers.

Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions

NASA Astrophysics Data System (ADS)

Novaković, M.; Traverse, A.; Popović, M.; Lieb, K. P.; Zhang, K.; Bibić, N.

2012-07-01

We report on modifications of 280-nm thin polycrystalline CrN layers caused by vanadium ion implantation. The CrN layers were deposited at 150°C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 80-keV V+ ions to fluences of 1×1017 and 2×1017 ions/cm2. Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction were used to characterize changes in the structural properties of the films. Their optical and electrical properties were analyzed by infrared spectroscopy in reflection mode and electrical resistivity measurements. CrN was found to keep its cubic structure under the conditions of vanadium ion implantation used here. The initially partially non-metallic CrN layer displays metallic character under implantation, which may be related to the possible formation of Cr1-x V x N.

Improved cell viability and hydroxyapatite growth on nitrogen ion-implanted surfaces

NASA Astrophysics Data System (ADS)

Shafique, Muhammad Ahsan; Murtaza, G.; Saadat, Shahzad; Uddin, Muhammad K. H.; Ahmad, Riaz

2017-08-01

Stainless steel 306 is implanted with various doses of nitrogen ions using a 2 MV pelletron accelerator for the improvement of its surface biomedical properties. Raman spectroscopy reveals incubation of hydroxyapatite (HA) on all the samples and it is found that the growth of incubated HA is greater in higher ion dose samples. SEM profiles depict uniform growth and greater spread of HA with higher ion implantation. Human oral fibroblast response is also found consistent with Raman spectroscopy and SEM results; the cell viability is found maximum in samples treated with the highest (more than 300%) dose. XRD profiles signified greater peak intensity of HA with ion implantation; a contact angle study revealed hydrophilic behavior of all the samples but the treated samples were found to be lesser hydrophilic compared to the control samples. Nitrogen implantation yields greater bioactivity, improved surface affinity for HA incubation and improved hardness of the surface.

Low-Temperature Selective Growth of Tungsten Oxide Nanowires by Controlled Nanoscale Stress Induction

PubMed Central

Na, Hyungjoo; Eun, Youngkee; Kim, Min-Ook; Choi, Jungwook; Kim, Jongbaeg

2015-01-01

We report a unique approach for the patterned growth of single-crystalline tungsten oxide (WOx) nanowires based on localized stress-induction. Ions implanted into the desired growth area of WOx thin films lead to a local increase in the compressive stress, leading to the growth of nanowire at lower temperatures (600 °C vs. 750–900 °C) than for equivalent non-implanted samples. Nanowires were successfully grown on the microscale patterns using wafer-level ion implantation and on the nanometer scale patterns using a focused ion beam (FIB). Experimental results show that nanowire growth is influenced by a number of factors including the dose of the implanted ions and their atomic radius. The implanted-ion-assisted, stress-induced method proposed here for the patterned growth of WOx nanowires is simpler than alternative approaches and enhances the compatibility of the process by reducing the growth temperature. PMID:26666843

Study of wettability and cell viability of H implanted stainless steel

NASA Astrophysics Data System (ADS)

Shafique, Muhammad Ahsan; Ahmad, Riaz; Rehman, Ihtesham Ur

2018-03-01

In the present work, the effect of hydrogen ion implantation on surface wettability and biocompatibility of stainless steel is investigated. Hydrogen ions are implanted in the near-surface of stainless steel to facilitate hydrogen bonding at different doses with constant energy of 500 KeV, which consequently improve the surface wettability. Treated and untreated sample are characterized for surface wettability, incubation of hydroxyapatite and cell viability. Contact angle (CA) study reveals that surface wettability increases with increasing H-ion dose. Raman spectroscopy shows that precipitation of hydroxyapatite over the surface increase with increasing dose of H-ions. Cell viability study using MTT assay describes improved cell viability in treated samples as compared to the untreated sample. It is found that low dose of H-ions is more effective for cell proliferation and the cell count decreases with increasing ion dose. Our study demonstrates that H ion implantation improves the surface wettability and biocompatibility of stainless steel.

Effects of He implantation on radiation induced segregation in Cu-Au and Ni-Si alloys

NASA Astrophysics Data System (ADS)

Iwase, A.; Rehn, L. E.; Baldo, P. M.; Funk, L.

Effects of He implantation on radiation induced segregation (RIS) in Cu-Au and Ni-Si alloys were investigated using in situ Rutherford backscattering spectrometry during simultaneous irradiation with 1.5-MeV He and low-energy (100 or 400-keV) He ions at elevated temperatures. RIS during single He ion irradiation, and the effects of pre-implantation with low-energy He ions, were also studied. RIS near the specimen surface, which was pronounced during 1.5-MeV He single-ion irradiation, was strongly reduced under low-energy He single-ion irradiation, and during simultaneous irradiation with 1.5-MeV He and low-energy He ions. A similar RIS reduction was also observed in the specimens pre-implanted with low-energy He ions. The experimental results indicate that the accumulated He atoms cause the formation of small bubbles, which provide additional recombination sites for freely migrating defects.

Synergistic effect of nanotopography and bioactive ions on peri-implant bone response

PubMed Central

Su, Yingmin; Komasa, Satoshi; Li, Peiqi; Nishizaki, Mariko; Chen, Luyuan; Terada, Chisato; Yoshimine, Shigeki; Nishizaki, Hiroshi; Okazaki, Joji

2017-01-01

Both bioactive ion chemistry and nanoscale surface modifications are beneficial for enhanced osseointegration of endosseous implants. In this study, a facile synthesis approach to the incorporation of bioactive Ca2+ ions into the interlayers of nanoporous structures (Ca-nano) formed on a Ti6Al4V alloy surface was developed by sequential chemical and heat treatments. Samples with a machined surface and an Na+ ion-incorporated nanoporous surface (Na-nano) fabricated by concentrated alkali and heat treatment were used in parallel for comparison. The bone response was investigated by microcomputed tomography assessment, sequential fluorescent labeling analysis, and histological and histomorphometric evaluation after 8 weeks of implantation in rat femurs. No significant differences were found in the nanotopography, surface roughness, or crystalline properties of the Ca-nano and Na-nano surfaces. Bone–implant contact was better in the Ca-nano and Na-nano implants than in the machined implant. The Ca-nano implant was superior to the Na-nano implant in terms of enhancing the volume of new bone formation. The bone formation activity consistently increased for the Ca-nano implant but ceased for the Na-nano implant in the late healing stage. These results suggest that Ca-nano implants have promising potential for application in dentistry and orthopedics. PMID:28184162

Electro-optical detection of THz radiation in Fe implanted LiNbO3

NASA Astrophysics Data System (ADS)

Wang, Yuhua; Ni, Hongwei; Zhan, Weiting; Yuan, Jie; Wang, Ruwu

2013-01-01

In this letter, the authors present first observation of terahertz generation from Fe implantation of LiNbO3 crystal substrate. LiNbO3 single crystal is grown by Czochralski method. Metal nanoparticles synthesized by Fe ion implantation were implanted into LiNbO3 single crystal using metal vapor vacuum arc (MEVVA) ion source. 1 kHz, 35 fs laser pulsed centered at 800 nm were focused onto the samples. Terahertz was generated via optical rectification. The findings suggest that under the investigated implantation parameter, a spectral component in excess of 0.44 THz emission were found from Fe ion implantation of LiNbO3.

Retention of ion-implanted-xenon in olivine: Dependence on implantation dose

NASA Technical Reports Server (NTRS)

Melcher, C. L.; Tombrello, T. A.; Burnett, D. S.

1982-01-01

The diffusion of Xe in olivine, a major mineral in both meteorites and lunar samples, was studied. Xe ions were implanted at 200 keV into single-crystal synthetic-forsterite targets and the depth profiles were measured by alpha particle backscattering before and after annealing for 1 hour at temperatures up to 1500 C. The fraction of implanted Xe retained following annealing was strongly dependent on the implantation dose. Maximum retention of 100% occurred for an implantion dose of 3 x 10 to the 15th power Xe ions/sq cm. Retention was less at lower doses, with (approximately more than or = 50% loss at one hundred trillion Xe ions/sq cm. Taking the diffusion coefficient at this dose as a lower limit, the minimum activation energy necessary for Xe retention in a 10 micrometer layer for ten million years was calculated as a function of metamorphic temperature.

Development and experimental study of large size composite plasma immersion ion implantation device

NASA Astrophysics Data System (ADS)

Falun, SONG; Fei, LI; Mingdong, ZHU; Langping, WANG; Beizhen, ZHANG; Haitao, GONG; Yanqing, GAN; Xiao, JIN

2018-01-01

Plasma immersion ion implantation (PIII) overcomes the direct exposure limit of traditional beam-line ion implantation, and is suitable for the treatment of complex work-piece with large size. PIII technology is often used for surface modification of metal, plastics and ceramics. Based on the requirement of surface modification of large size insulating material, a composite full-directional PIII device based on RF plasma source and metal plasma source is developed in this paper. This device can not only realize gas ion implantation, but also can realize metal ion implantation, and can also realize gas ion mixing with metal ions injection. This device has two metal plasma sources and each metal source contains three cathodes. Under the condition of keeping the vacuum unchanged, the cathode can be switched freely. The volume of the vacuum chamber is about 0.94 m3, and maximum vacuum degree is about 5 × 10-4 Pa. The density of RF plasma in homogeneous region is about 109 cm-3, and plasma density in the ion implantation region is about 1010 cm-3. This device can be used for large-size sample material PIII treatment, the maximum size of the sample diameter up to 400 mm. The experimental results show that the plasma discharge in the device is stable and can run for a long time. It is suitable for surface treatment of insulating materials.

Effect of silver ion-induced disorder on morphological, chemical and optical properties of poly (methyl methacrylate)

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Saleemi, Farhat; Rafique, M. Shahid; Naab, Fabian; Toader, Ovidiu; Mahmood, Arshad; Aziz, Uzma

2016-11-01

Ion implantation is a versatile technique to tailor the surface properties of polymers in a controlled manner. In the present study, samples of poly (methyl methacrylate) (PMMA) have been implanted with 400 keV silver (Ag+) ion beam to various ion fluences ranging from 5 × 1013 to 5 × 1015 ions/cm2. The effect of Ag+ ion-induced disorder on morphological, chemical and optical properties of PMMA is analyzed using Atomic Force Microscope (AFM), Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible (UV-Vis) spectroscopy. Furthermore, the electrical conductivity of pristine and implanted PMMA is measured using four probe apparatus. The AFM images revealed the growth of nano-sized grainy structures and hillocks above the surface of implanted PMMA. The FTIR spectra confirmed the modifications in chemical structure of PMMA along with the formation of sbnd Cdbnd Csbnd carbon contents. The refractive index, extinction coefficient and photoconductivity of implanted PMMA have been found to increase as a function of ion fluence. Simultaneously, indirect optical band gap is reduced from 3.13 to 0.81 eV at a relatively high fluence (5 × 1015 ions/cm2). A linear correlation has been established between the band gap and Urbach energies. Moreover, the electrical conductivity of Ag+ implanted PMMA has increased from 2.14 × 10-10 (pristine) to 9.6 × 10-6 S/cm.

Thermal annealing behavior of nano-size metal-oxide particles synthesized by ion implantation in Fe-Cr alloy

NASA Astrophysics Data System (ADS)

Zheng, C.; Gentils, A.; Ribis, J.; Borodin, V. A.; Descoins, M.; Mangelinck, D.; Dalle, F.; Arnal, B.; Delauche, L.

2017-05-01

Oxide dispersion strengthened (ODS) steels are promising structural materials for the next generation nuclear reactors, as well as fusion facilities. The detailed understanding of the mechanisms involved in the precipitation of nano-oxides during ODS steel production would strongly contribute to the improvement of the mechanical properties and the optimization of manufacturing of ODS steels, with a potentially strong economic impact for their industrialization. A useful tool for the experimental study of nano-oxide precipitation is ion implantation, a technique that is widely used to synthesize precipitate nanostructures in well-controlled conditions. Earlier, we have demonstrated the feasibility of synthesizing aluminum-oxide particles in the high purity Fe-10Cr alloy by consecutive implantation with Al and O ions at room temperature. This paper describes the effects of high-temperature annealing after the ion implantation stage on the development of the aluminum based oxide nanoparticle system. Using transmission electron microscopy and atom probe tomography experiments, we demonstrate that post-implantation heat treatment induces the growth of the nano-sized oxides in the implanted region and nucleation of new oxide precipitates behind the implantation zone as a result of the diffusion driven broadening of implant profiles. A tentative scenario for the development of metal-oxide nano-particles at both ion implantation and heat treatment stages is suggested based on the experimental observations.

Ultrahigh-current-density metal-ion implantation and diamondlike-hydrocarbon films for tribological applications

NASA Astrophysics Data System (ADS)

Wilbur, P. J.

1993-09-01

The metal-ion-implantation system used to implant metals into substrates are described. The metal vapor required for operation is supplied by drawing sufficient electron current from the plasma discharge to an anode-potential crucible so a solid, pure metal placed in the crucible will be heated to the point of vaporization. The ion-producing, plasma discharge is initiated within a graphite-ion-source body, which operates at high temperature, by using an argon flow that is turned off once the metal vapor is present. Extraction of ion beams several cm in diameter at current densities ranging to several hundred micro-A/sq cm on a target 50 cm downstream of the ion source were demonstrated using Mg, Ag, Cr, Cu, Si, Ti, V, B, and Zr. These metals were implanted into over 100 substrates (discs, pins, flats, wires). A model describing thermal stresses induced in materials (e.g. ceramic plates) during high-current-density implantation is presented. Tribological and microstructural characteristics of iron and 304-stainless-steel samples implanted with Ti or B are examined. Diamondlike-hydrocarbon coatings were applied to steel surfaces and found to exhibit good tribological performance.

Magnesium ion implantation on a micro/nanostructured titanium surface promotes its bioactivity and osteogenic differentiation function

PubMed Central

Wang, Guifang; Li, Jinhua; Zhang, Wenjie; Xu, Lianyi; Pan, Hongya; Wen, Jin; Wu, Qianju; She, Wenjun; Jiao, Ting; Liu, Xuanyong; Jiang, Xinquan

2014-01-01

As one of the important ions associated with bone osseointegration, magnesium was incorporated into a micro/nanostructured titanium surface using a magnesium plasma immersion ion-implantation method. Hierarchical hybrid micro/nanostructured titanium surfaces followed by magnesium ion implantation for 30 minutes (Mg30) and hierarchical hybrid micro/nanostructured titanium surfaces followed by magnesium ion implantation for 60 minutes (Mg60) were used as test groups. The surface morphology, chemical properties, and amount of magnesium ions released were evaluated by field-emission scanning electron microscopy, energy dispersive X-ray spectroscopy, field-emission transmission electron microscopy, and inductively coupled plasma-optical emission spectrometry. Rat bone marrow mesenchymal stem cells (rBMMSCs) were used to evaluate cell responses, including proliferation, spreading, and osteogenic differentiation on the surface of the material or in their medium extraction. Greater increases in the spreading and proliferation ability of rBMMSCs were observed on the surfaces of magnesium-implanted micro/nanostructures compared with the control plates. Furthermore, the osteocalcin (OCN), osteopontin (OPN), and alkaline phosphatase (ALP) genes were upregulated on both surfaces and in their medium extractions. The enhanced cell responses were correlated with increasing concentrations of magnesium ions, indicating that the osteoblastic differentiation of rBMMSCs was stimulated through the magnesium ion function. The magnesium ion-implanted micro/nanostructured titanium surfaces could enhance the proliferation, spreading, and osteogenic differentiation activity of rBMMSCs, suggesting they have potential application in improving bone-titanium integration. PMID:24940056

Characterization of Boron Contamination in Fluorine Implantation using Boron Trifluoride as a Source Material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmeide, Matthias; Kondratenko, Serguei

2011-01-07

Fluorine implantation process purity was considered on different types of high current implanters. It was found that implanters equipped with an indirectly heated cathode ion source show an enhanced deep boron contamination compared to a high current implanter using a cold RF-driven multicusp ion source when boron trifluoride is used for fluorine implantations. This contamination is directly related to the source technology and thus, should be considered potentially for any implanter design using hot cathode/hot filament ion source, independently of the manufacturer.The boron contamination results from the generation of double charged boron ions in the arc chamber and the subsequentmore » charge exchange reaction to single charged boron ions taking place between the arc chamber and the extraction electrode. The generation of the double charged boron ions depends mostly on the source parameters, whereas the pressure in the region between the arc chamber and the extraction electrode is mostly responsible for the charge exchange from double charged to single charged ions. The apparent mass covers a wide range, starting at mass 11. A portion of boron ions with energies of (19/11) times higher than fluorine energy has the same magnetic rigidity as fluorine beam and cannot be separated by the analyzer magnet. The earlier described charge exchange effects between the extraction electrode and the entrance to the analyzer magnet, however, generates boron beam with a higher magnetic rigidity compared to fluorine beam and cannot cause boron contamination after mass-separation.The energetic boron contamination was studied as a function of the ion source parameters, such as gas flow, arc voltage, and source magnet settings, as well as analyzing magnet aperture resolution. This allows process optimization reducing boron contamination to the level acceptable for device performance.« less

Observation of magnetic excitons in LaCoO3

NASA Astrophysics Data System (ADS)

Giblin, S. R.; Terry, I.; Clark, S. J.; Prokscha, T.; Prabhakaran, D.; Boothroyd, A. T.; Wu, J.; Leighton, C.

2005-06-01

An impurity-driven magnetic phase transition has been investigated in LaCoO3 at temperatures below that of the thermally induced spin state transition of the Co3+ ion. We have discovered a saturating component of the magnetisation, which we attribute to previously unobserved interactions between magnetic excitons. These conclusions are confirmed by muon spin spectroscopy which indicates an ordering temperature of 50 K in both the transverse and zero-field configurations. Low-energy muon measurements demonstrate that the magnetic behaviour is independent of implantation energy and hence a property of the bulk of the material. The magnetic exciton formation is attributed to the interaction between electrons bound at oxygen vacancies and neighbouring cobalt ions, and is proposed as the precursor to the magneto-electronic phase separation recently observed in doped lanthanum cobaltite.

A role for ion implantation in quantum computing

NASA Astrophysics Data System (ADS)

Jamieson, David N.; Prawer, Steven; Andrienko, Igor; Brett, David A.; Millar, Victoria

2001-04-01

We propose to create arrays of phosphorus atoms in silicon for quantum computing using ion implantation. Since the implantation of the ions is essentially random, the yield of usefully spaced atoms is low and therefore some method of registering the passage of a single ion is required. This can be accomplished by implantation of the ions through a thin surface layer consisting of resist. Changes to the chemical and/or electrical properties of the resist will be used to mark the site of the buried ion. For chemical changes, the latent damage will be developed and the atomic force microscope (AFM) used to image the changes in topography. Alternatively, changes in electrical properties (which obviate the need for post-irradiation chemical etching) will be used to register the passage of the ion using scanning tunneling microscopy (STM), the surface current imaging mode of the AFM. We address the central issue of the contrast created by the passage of a single ion through resist layers of PMMA and C 60.

Low-temperature positron annihilation study of B+-ion implanted PMMA

NASA Astrophysics Data System (ADS)

Kavetskyy, T. S.; Tsmots, V. M.; Voloshanska, S. Ya.; Šauša, O.; Nuzhdin, V. I.; Valeev, V. F.; Osin, Y. N.; Stepanov, A. L.

2014-08-01

Temperature dependent positron annihilation lifetime spectroscopy (PALS) measurements in the range of 50-300 K are carried out to study positronium formation in 40 KeV B+-ion implanted polymethylmethacrylate (B:PMMA) with two ion doses of 3.13 × 1015 and 3.75 × 1016 ions/cm2. The investigated samples show the various temperature trends of ortho-positronium (o-Ps) lifetime τ3 and intensity I3 in PMMA before and after ion implantation. Two transitions in the vicinity of ˜150 and ˜250 K, ascribed to γ and β transitions, respectively, are observed in the PMMA and B:PMMA samples in consistent with reference data for pristine sample. The obtained results are compared with room temperature PALS study of PMMA with different molecular weight (Mw) which known from literature. It is found that B+-ion implantation leads to decreasing Mw in PMMA at lower ion dose. At higher ion dose the local destruction of polymeric structure follows to broadening of lifetime distribution (hole size distribution).

Structural, optical and magnetic investigation of Gd implanted CeO2 nanocrystals

NASA Astrophysics Data System (ADS)

Kaviyarasu, K.; Murmu, P. P.; Kennedy, J.; Thema, F. T.; Letsholathebe, Douglas; Kotsedi, L.; Maaza, M.

2017-10-01

Gadolinium implanted cerium oxide (Gd-CeO2) nanocomposites is an important candidate which have unique hexagonal structure and high K- dielectric constant. Gd-CeO2 nanoparticles were synthesized using hydrothermal method. X-ray diffraction (XRD) results showed that the peaks are consistent with pure phase cubic structure the XRD pattern also confirmed crystallinity and phase purity of the sample. Nanocrystals sizes were found to be up to 25 nm as revealed by XRD and SEM. It is suggested that Gd gives an affirmative effect on the ion influence behavior of Gd-CeO2. XRD patterns showed formation of new phases and SEM micrographs revealed hexagonal structure. Photoluminescence measurement (PL) reveals the systematic shift of the emission band towards lower wavelength thereby ascertaining the quantum confinement effect (QCE). The PL spectrum has wider broad peak ranging from 390 nm to 770 nm and a sharp one centered on at 451.30 nm which is in tune with Gd ions. In the Raman spectra showed intense band observed between 460 cm-1 and 470 cm-1 which is attributed to oxygen ions into CeO2. Room temperature ferromagnetism was observed in un-doped and Gd implanted and annealed CeO2 nanocrystals. In the recent studies, ceria based materials have been considered as one of the most promising electrolytes for reduced temperature SOFC (solid oxide fuel cell) system due to their high ionic conductivities allowing its use in stainless steel supported fuel cells. CeO2 having an optical bandgap 3.3 eV and n-type carrier density which make it a promising candidate for various technological application such as buffer layer on silicon on insulator devices.

Development of the ion source for cluster implantation

NASA Astrophysics Data System (ADS)

Kulevoy, T. V.; Seleznev, D. N.; Kozlov, A. V.; Kuibeda, R. P.; Kropachev, G. N.; Alexeyenko, O. V.; Dugin, S. N.; Oks, E. M.; Gushenets, V. I.; Hershcovitch, A.; Jonson, B.; Poole, H. J.

2014-02-01

Bernas ion source development to meet needs of 100s of electron-volt ion implanters for shallow junction production is in progress in Institute for Theoretical and Experimental Physics. The ion sources provides high intensity ion beam of boron clusters under self-cleaning operation mode. The last progress with ion source operation is presented. The mechanism of self-cleaning procedure is described.

Determination of migration of ion-implanted Ar and Zn in silica by backscattering spectrometry

NASA Astrophysics Data System (ADS)

Szilágyi, E.; Bányász, I.; Kótai, E.; Németh, A.; Major, C.; Fried, M.; Battistig, G.

2015-03-01

It is well known that the refractive indices of lots of materials can be modified by ion implantation, which is important for waveguide fabrication. In this work the effect of Ar and Zn ion implantation on silica layers was investigated by Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Silica layers produced by chemical vapour deposition technique on single crystal silicon wafers were implanted by Ar and Zn ions with a fluence of 1-2 ×1016 Ar/cm2 and 2.5 ×1016 Zn/cm2, respectively. The refractive indices of the implanted silica layers before and after annealing at 300°C and 600°C were determined by SE. The migration of the implanted element was studied by real-time RBS up to 500°C. It was found that the implanted Ar escapes from the sample at 300°C. Although the refractive indices of the Ar-implanted silica layers were increased compared to the as-grown samples, after the annealing this increase in the refractive indices vanished. In case of the Zn-implanted silica layer both the distribution of the Zn and the change in the refractive indices were found to be stable. Zn implantation seems to be an ideal choice for producing waveguides.

Scanning-electron-microscopy observations and mechanical characteristics of ion-beam-sputtered surgical implant alloys

NASA Technical Reports Server (NTRS)

Weigand, A. J.; Meyer, M. L.; Ling, J. S.

1977-01-01

An electron bombardment ion thruster was used as an ion source to sputter the surfaces of orthopedic prosthetic metals. Scanning electron microscopy photomicrographs were made of each ion beam textured surface. The effect of ion texturing an implant surface on its bond to bone cement was investigated. A Co-Cr-W alloy and surgical stainless steel were used as representative hard tissue implant materials to determine effects of ion texturing on bulk mechanical properties. Work was done to determine the effect of substrate temperature on the development of an ion textured surface microstructure. Results indicate that the ultimate strength of the bulk materials is unchanged by ion texturing and that the microstructure will develop more rapidly if the substrate is heated prior to ion texturing.

Electrostatically defined silicon quantum dots with counted antimony donor implants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P.

2016-02-08

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

Electrostatically defined silicon quantum dots with counted antimony donor implants

NASA Astrophysics Data System (ADS)

Singh, M.; Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Luhman, D. R.; Bielejec, E.; Lilly, M. P.; Carroll, M. S.

2016-02-01

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

Demonstration and Analysis of Materials Processing by Ablation Plasma Ion Implantation (APII)

NASA Astrophysics Data System (ADS)

Qi, B.; Gilgenbach, R. M.; Lau, Y. Y.; Jones, M. C.; Lian, J.; Wang, L. M.; Doll, G. L.; Lazarides, A.

2001-10-01

Experiments have demonstrated laser-ablated Fe ion implantation into Si substrates. Baseline laser deposited films (0 kV) showed an amorphous Fe-Si film overlying the Si substrate with a top layer of nanocrystalline Fe. APII films exhibited an additional Fe ion-induced damage layer, extending 7.6 nm below the Si surface. The overlying Fe-Si layer and Fe top layer were amorphized by fast ions. Results were confirmed by XPS vs Ar ion etching time for depth profile of the deposited films. XPS showed primarily Fe (top layer), transitioning to roughly equal Fe/Si , then mostly Si with lower Fe (implanted region). These data clearly prove Fe ion implantation into Si, verifying the feasibility of APII as an ion acceleration and implantation process [1]. SRIM simulations predict about 20 percent deeper Fe ion penetration than data, due to:(a) Subsequent ions must pass through the Fe film deposited by earlier ions, and (b) the bias voltage has a slow rise and fall time. Theoretical research has developed the scaling laws for APII [2]. Recently, a model has successfully explained the shortening of the decay time in the high voltage pulse with the laser ablation plasma. This reduces the theoretical RC time constant, which agrees with the experimental data. * Research supported by National Science Foundation Grant CTS-9907106 [1] Appl. Phys. Lett. 78, 3785 (2001) [2] Appl. Phys. Lett. 78, 706 (2001)),

Gallium nitride junction field-effect transistor

DOEpatents

Zolper, John C.; Shul, Randy J.

1999-01-01

An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

Radiation damage in Tb-implanted CaF 2 observed by channeling and luminescence measurements

NASA Astrophysics Data System (ADS)

Aono, K.; Kumagai, M.; Iwaki, M.; Aoyagi, Y.; Namba, S.

1993-06-01

The effects of 100 keV Tb ion implantation in CaF 2 single crystals have been investigated using Rutherford backscattering/channeling technique and luminescence spectra during ion implantation, depending on ion doses. Terbium ions were implanted into (111)-cut CaF 2 single crystals in random directions with doses ranging from 1 × 10 13 to 1 × 10 17 Tb +/cm 2 at -100°C, 25°C and 100°C. The luminescence signals were measured by 100 keV Ar ion beam irradiation at room temperature to Tb-implanted specimens in order to detect the ionic state of Tb. Two broad emission peaks (near 380 and 545 nm) in visible regions were observed, originating from Tb 3+ in CaF 2. The same luminescence was also observed even during Tb implantation to CaF 2. The luminescence near 380 nm is identified as an emission of 5D 3→ 7F 6 and that near 545 nm is 5D 4→ 7F 5. The emission peak intensities depend on ion dose. Channeling measurements suggest that most of the Tb atoms occupy substitutional lattice sites. Intensities of luminescence and Tb depth profiles depend on the target temperature. In conclusion, implanted Tb atoms occupy Ca lattice sites and emit green luminescence light.

Proton redistribution and pseudoantiferroelectricity in H+ implanted Pb(Zr,Ti)O3 thin films

NASA Astrophysics Data System (ADS)

Zhang, X.; Jiang, A. Q.; Tang, T. A.

2009-05-01

Hydrogen ions were implanted into 500-nm-thick Pb(Zr,Ti)O3 ferroelectric thin films with different doses and energies. An antiferroelectric behavior was confirmed in the implanted thin films with proper H+ injection energies from independent measurements of polarization-electric hysteresis loops and capacitance-voltage curves. With the increase in the H+ doping concentration and implanting energy up to 25 keV, the characteristic pseudoantiferroelectric behavior becomes more evident in the films along with the concomitant reduction in the remnant polarization. However, the above antiferroelectricity is weakened for the restoration of a preferred ferroelectric state, once the implanting energy is higher than 35 eV. The consequent "Trim94" simulation of the H+ distribution as well as the induced oxygen vacancies (VOṡṡ) indicates the almost linear shift in the depth for the maximum charge density within the film with the enhanced implanting energy until the depth moves out of the film thickness above 40 keV. Beyond the antiferroelectric dependence on the implanting energy in thin films, the previous ferroelectric state can also be rejuvenated under a bipolar-field stressing through the redistribution of the H+ and VOṡṡ concentrations. The rejuvenation process is accelerated upon heating due to the increased charge mobility. The doping charges are immobile during short-time domain switching but movable under a long-time negative/positive field with the estimated activation energy of 0.23/0.29 eV. This study implies the potential application of high-density charge storage of the implanted ferroelectric capacitor with the property comparable to a genuine antiferroelectric capacitor.

High-dose boron and silver ion implantation into PMMA probed by slow positrons: Effects of carbonization and formation of metal nanoparticles

NASA Astrophysics Data System (ADS)

Kavetskyy, T.; Iida, K.; Nagashima, Y.; Kuczumow, A.; Šauša, O.; Nuzhdin, V.; Valeev, V.; Stepanov, A. L.

2017-01-01

The Doppler broadening slow positron beam spectroscopy (SPBS) data for the previously observed effect of carbonization in high-dose (>1016 ion/cm2) 40 keV boron-ion-implanted polymethylmethacrylate (B:PMMA) and another one obtained for the effect of formation of metal nanoparticles in high-dose 30 keV silver-ion-implanted polymer (Ag:PMMA) are compared. Following to the Doppler broadening SPBS results, a difference in the high-dose ion-irradiation-induced processes in B:PMMA and Ag:PMMA is detected.

The effects on γ-LiAlO2 induced by nuclear energy losses during Ga ions implantation

NASA Astrophysics Data System (ADS)

Zhang, Jing; Song, Hong-Lian; Qiao, Mei; Yu, Xiao-Fei; Wang, Tie-Jun; Wang, Xue-Lin

2017-09-01

To explore the evolution of γ-LiAlO2 under ion irradiation at low energy, we implanted Ga ions of 30, 80 and 150 keV at fluences of 1 × 1014 and 1 × 1015 ions/cm2 in z-cut γ-LiAlO2 samples, respectively. The implantation resulted in damage regions dominated by nuclear energy losses at depth of 232 Å, 514 Å, and 911 Å beneath the surface, respectively, which was simulated by the Stopping and Range of Ions in Matter program. The irradiated γ-LiAlO2 were characterized with atomic force microscope, Raman spectroscopy, X-ray diffraction and Rutherford backscattering in a channeling mode for morphology evolution, structure information and damage profiles. The interesting and partly abnormal results showed the various behaviors in modification of surface by Ga ions implantation.

Controlled removal of ceramic surfaces with combination of ions implantation and ultrasonic energy

DOEpatents

Boatner, Lynn A.; Rankin, Janet; Thevenard, Paul; Romana, Laurence J.

1995-01-01

A method for tailoring or patterning the surface of ceramic articles is provided by implanting ions to predetermined depth into the ceramic material at a selected surface location with the ions being implanted at a fluence and energy adequate to damage the lattice structure of the ceramic material for bi-axially straining near-surface regions of the ceramic material to the predetermined depth. The resulting metastable near-surface regions of the ceramic material are then contacted with energy pulses from collapsing, ultrasonically-generated cavitation bubbles in a liquid medium for removing to a selected depth the ion-damaged near-surface regions containing the bi-axially strained lattice structure from the ceramic body. Additional patterning of the selected surface location on the ceramic body is provided by implanting a high fluence of high-energy, relatively-light ions at selected surface sites for relaxing the bi-axial strain in the near-surface regions defined by these sites and thereby preventing the removal of such ion-implanted sites by the energy pulses from the collapsing ultrasonic cavitation bubbles.

Effect of structural transformation of C+-ion implanted PMMA into quasi-continuous carbonaceous layer on its optical and electrical properties

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Rafique, M. Shahid; Saleemi, Farhat; Sagheer, Riffat

2018-02-01

The samples of Polymethylmethacrylate (PMMA) have been implanted with 500 keV C+-ions at different ion fluences ranging from 9.3 × 1013 to 8.4 × 1014 ions/cm2. The structural modifications are examined by Fourier Transform Infrared and Raman spectral studies. For the investigation of optical, electrical and surface morphological properties of implanted samples UV-Visible spectrometer, four probe apparatus and optical microscope have been employed. The FTIR spectra confirmed the cleavage of chemicals bonds as a consequence of polymer chain scission, whereas, Raman studies revealed the transformation of PMMA structure into quasi-continuous amorphous carbon with increasing ion fluences. A continuous reduction has been observed in the optical band gap of PMMA from 3.16 to 1.42 eV. Moreover, the refractive index, extinction coefficient and electrical conductivity of implanted PMMA are found to be an increasing function of the ion fluence. The micrographic images revealed the signatures of ion-induced defects like cracking, dehydrogenation, stress and swelling on the surface of PMMA. These implanted samples have a potential to be used in the field of optical communications and thin plastic flexible electronics.

Formation of Wear Resistant Steel Surfaces by Plasma Immersion Ion Implantation

NASA Astrophysics Data System (ADS)

Mändl, S.; Rauschenbach, B.

2003-08-01

Plasma immersion ion implantation (PIII) is a versatile and fast method for implanting energetic ions into large and complex shaped three-dimensional objects where the ions are accelerated by applying negative high voltage pulses to a substrate immersed in a plasma. As the line-of-sight restrictions of conventional implanters are circumvented, it results in a fast and cost-effective technology. Implantation of nitrogen at 30 - 40 keV at moderate temperatures of 200 - 400 °C into steel circumvents the diminishing thermal nitrogen activation encountered, e.g., in plasma nitriding in this temperature regime, thus enabling nitriding of additional steel grades. Nitride formation and improvement of the mechanical properties after PIII are presented for several steel grades, including AISI 316Ti (food industry), AISI D2 (used for bending tools) and AISI 1095 (with applications in the textile industry).

Surface-conductivity enhancement of PMMA by keV-energy metal-ion implantation

NASA Astrophysics Data System (ADS)

Bannister, M. E.; Hijazi, H.; Meyer, H. M.; Cianciolo, V.; Meyer, F. W.

2014-11-01

An experiment has been proposed to measure the neutron electric dipole moment (nEDM) with high precision at the Oak Ridge National Laboratory (ORNL) Spallation Neutron Source. One of the requirements of this experiment is the development of PMMA (Lucite) material with a sufficiently conductive surface to permit its use as a high-voltage electrode while immersed in liquid He. At the ORNL Multicharged Ion Research Facility, an R&D activity is under way to achieve suitable surface conductivity in poly-methyl methacrylate (PMMA) using metal ion implantation. The metal implantation is performed using an electron-cyclotron-resonance (ECR) ion source and a recently developed beam line deceleration module that is capable of providing high flux beams for implantation at energies as low as a few tens of eV. The latter is essential for reaching implantation fluences exceeding 1 × 1016 cm-2, where typical percolation thresholds in polymers have been reported. In this contribution, we report results on initial implantation of Lucite by Ti and W beams with keV energies to average fluences in the range 0.5-6.2 × 1016 cm-2. Initial measurements of surface-resistivity changes are reported as function of implantation fluence, energy, and sample temperature. We also report X-ray photoelectron spectroscopy (XPS) surface and depth profiling measurements of the ion implanted samples, to identify possible correlations between the near surface and depth resolved implanted W concentrations and the measured surface resistivities.

Synthesis of sponge-like hydrophobic NiBi3 surface by 200 keV Ar ion implantation

NASA Astrophysics Data System (ADS)

Siva, Vantari; Datta, D. P.; Chatterjee, S.; Varma, S.; Kanjilal, D.; Sahoo, Pratap K.

2017-07-01

Sponge-like nanostructures develop under Ar-ion implantation of a Ni-Bi bilayer with increasing ion fluence at room temperature. The surface morphology features different stages of evolution as a function of ion fluence, finally resulting in a planar surface at the highest fluence. Our investigations on the chemical composition reveal a spontaneous formation of NiBi3 phase on the surface of the as deposited bilayer film. Interestingly, we observe a competition between crystallization and amorphization of the existing poly-crystalline phases as a function of the implanted fluence. Measurements of contact angle by sessile drop method clearly show the ion-fluence dependent hydrophobic nature of the nano-structured surfaces. The wettability has been correlated with the variation in roughness and composition of the implanted surface. In fact, our experimental results confirm dominant effect of ion-sputtering as well as ion-induced mixing at the bilayer interface in the evolution of the sponge-like surface.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slabodchikov, Vladimir A., E-mail: dipis1991@mail.ru; Borisov, Dmitry P., E-mail: borengin@mail.ru; Kuznetsov, Vladimir M., E-mail: kuznetsov@rec.tsu.ru

The paper reports on a new method of plasma immersion ion implantation for the surface modification of medical materials using the example of nickel-titanium (NiTi) alloys much used for manufacturing medical implants. The chemical composition and surface properties of NiTi alloys doped with silicon by conventional ion implantation and by the proposed plasma immersion method are compared. It is shown that the new plasma immersion method is more efficient than conventional ion beam treatment and provides Si implantation into NiTi surface layers through a depth of a hundred nanometers at low bias voltages (400 V) and temperatures (≤150°C) of the substrate.more » The research results suggest that the chemical composition and surface properties of materials required for medicine, e.g., NiTi alloys, can be successfully attained through modification by the proposed method of plasma immersion ion implantation and by other methods based on the proposed vacuum equipment without using any conventional ion beam treatment.« less

Preshock region acceleration of implanted cometary H(+) and O(+)

NASA Astrophysics Data System (ADS)

Gombosi, T. I.

1988-01-01

A self-consistent, three-fluid model of plasma transport and implanted ion acceleration in the unshocked solar wind is presented. The solar wind plasma is depleted by charge exchange with the expanding cometary exosphere, while implanted protons and heavy ions are produced by photoionization and charge transfer and lost by charge exchange. A generalized transport equation describing convection, adiabatic and diffusive velocity change, and the appropriate production terms is used to describe the evolution of the two cometary ion components, while the moments of the Boltzmann equation are used to calculate the solar wind density and pressure. The flow velocity is obtained self-consistently by combining the conservation equations of the three ion species. The results imply that second-order Fermi acceleration can explain the implanted spectra observed in the unshocked solar wind. Comparison of measured and calculated distribution indicates that spatial diffusion of implanted ions probably plays an important role in forming the energetic particle environment in the shock vicinity.

Laser characterization of the depth profile of complex refractive index of PMMA implanted with 50 keV silicon ions

NASA Astrophysics Data System (ADS)

Stefanov, Ivan L.; Stoyanov, Hristiyan Y.; Petrova, Elitza; Russev, Stoyan C.; Tsutsumanova, Gichka G.; Hadjichristov, Georgi B.

2013-03-01

The depth profile of the complex refractive index of silicon ion (Si+) implanted polymethylmethacrylate (PMMA) is studied, in particular PMMA implanted with Si+ ions accelerated to a relatively low energy of 50 keV and at a fluence of 3.2 × 1015 cm-2. The ion-modified material with nano-clustered structure formed in the near(sub)surface layer of a thickness of about 100 nm is optically characterized by simulation based on reflection ellipsometry measurements at a wavelength of 632.8 nm (He-Ne laser). Being of importance for applications of ion-implanted PMMA in integrated optics, optoelectronics and optical communications, the effect of the index depth profile of Si+-implanted PMMA on the profile of the reflected laser beam due to laser-induced thermo-lensing in reflection is also analyzed upon illumination with a low power cw laser (wavelength 532 nm, optical power 10 - 50 mW).

Porcelain-coated antenna for radio-frequency driven plasma source

DOEpatents

Leung, Ka-Ngo; Wells, Russell P.; Craven, Glen E.

1996-01-01

A new porcelain-enamel coated antenna creates a clean plasma for volume or surface-conversion ion sources. The porcelain-enamel coating is hard, electrically insulating, long lasting, non fragile, and resistant to puncture by high energy ions in the plasma. Plasma and ion production using the porcelain enamel coated antenna is uncontaminated with filament or extraneous metal ion because the porcelain does not evaporate and is not sputtered into the plasma during operation. Ion beams produced using the new porcelain-enamel coated antenna are useful in ion implantation, high energy accelerators, negative, positive, or neutral beam applications, fusion, and treatment of chemical or radioactive waste for disposal. For ion implantation, the appropriate species ion beam generated with the inventive antenna will penetrate large or small, irregularly shaped conducting objects with a narrow implantation profile.

Impact of Mg-ion implantation with various fluence ranges on optical properties of n-type GaN

NASA Astrophysics Data System (ADS)

Tsuge, Hirofumi; Ikeda, Kiyoji; Kato, Shigeki; Nishimura, Tomoaki; Nakamura, Tohru; Kuriyama, Kazuo; Mishima, Tomoyoshi

2017-10-01

Optical characteristics of Mg-ion implanted GaN layers with various fluence ranges were evaluated. Mg ion implantation was performed twice at energies of 30 and 60 keV on n-GaN layers. The first implantation at 30 keV was performed with three different fluence ranges of 1.0 × 1014, 1.0 × 1015 and 5.0 × 1015 cm-2. The second implantation at an energy of 60 keV was performed with a fluence of 6.5 × 1013 cm-2. After implantation, samples were annealed at 1250 °C for 1 min under N2 atmosphere. Photoluminescence (PL) spectrum of the GaN layer with the Mg ion implantation at the fluence range of 1.0 × 1014 cm-2 at 30 keV was similar to the one of Mg-doped p-GaN layers grown by MOVPE (Metal-Organic Vapor Phase Epitaxy) on free-standing GaN substrates and those at the fluence ranges over 1.0 × 1015 cm-2 were largely degraded.

Growth of rutile TiO2 nanorods in Ti and Cu ion sequentially implanted SiO2 and the involved mechanisms

NASA Astrophysics Data System (ADS)

Mu, Xiaoyu; Liu, Xiaoyu; Wang, Xiaohu; Dai, Haitao; Liu, Changlong

2018-01-01

TiO2 in nanoscale exhibits unique physicochemical and optoelectronic properties and has attracted much more interest of the researchers. In this work, TiO2 nanostructures are synthesized in amorphous SiO2 slices by implanting Ti ions, or sequentially implanting Ti and Cu ions combined with annealing at high temperature. The morphology, structure, spatial distribution and optical properties of the formed nanostructures have been investigated in detail. Our results clearly show that the thermal growth of TiO2 nanostructures in SiO2 substrate is significantly enhanced by presence of post Cu ion implantation, which depends strongly on the applied Cu ion fluence, as well as the annealing atmosphere. Due to the formation of Cu2O in the substrate, rutile TiO2 nanorods of large size have been well fabricated in the Ti and Cu sequentially implanted SiO2 after annealing in N2 atmosphere, in which Cu2O plays a role as a catalyst. Moreover, the sample with well-fabricated TiO2 nanorods exhibits a narrowed band gap, an enhanced optical absorption in visible region, and catalase-/peroxidase-like catalytic characteristics. Our findings provide an effective route to fabricate functional TiO2 nanorods in SiO2 via ion implantation.

Bioactivity of plasma implanted biomaterials

NASA Astrophysics Data System (ADS)

Chu, Paul K.

2006-01-01

Plasma immersion ion implantation and deposition (PIII&D) is an effective technique to enhance the surface bioactivity of materials. In this paper, recent progress made in our laboratory on plasma surface modification of biomedical materials is described. NiTi alloys have unique super-elastic and shape memory properties and are suitable for orthopedic implants but the leaching of toxic Ni may pose health hazards in humans. We have recently investigated the use of acetylene, oxygen and nitrogen PIII&D to prevent out-diffusion of nickel and good results have been obtained. Silicon is the most important material in the microelectronics industry but its surface biocompatibility has not been investigated in details. We have recently performed hydrogen PIII into silicon to improve the surface bioactivity and observed biomimetic growth of apatite on the surface in simulated body fluids. Diamond-like carbon (DLC) is widely used in the industry due to its excellent mechanical properties and chemical inertness and by incorporation of elements such as nitrogen and phosphorus, the surface blood compatibility can be improved. The properties as well as in vitro biological test results are discussed in this article.

Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp; Yachida, Gosuke; Inoue, Kodai

2016-06-15

We performed extremely low-energy {sup 16}O{sup +} implantation at 10 keV (R{sub p} ∼ 25 nm) followed by annealing aiming at directly synthesizing an ultrathin Si layer separated by a buried SiO{sub 2} layer in Si(001) substrates, and then investigated feasible condition of recrystallization and stabilization of the superficial Si and the buried oxide layer by significantly low temperature annealing. The elemental compositions were analyzed by Rutherford backscattering (RBS) and secondary ion mass spectroscopy (SIMS). The crystallinity of the superficial Si layer was quantitatively confirmed by ananlyzing RBS-channeling spectra. Cross-sectional morphologies and atomic configurations were observed by transmission electron microscopemore » (TEM). As a result, we succeeded in directly synthesizing an ultrathin single-crystalline silicon layer with ≤20 nm thick separated by a thin buried stoichiometric SiO{sub 2} layer with ≤20 nm thick formed by extremely low-energy {sup 16}O{sup +} implantation followed by surprisingly low temperature annealing at 1050{sup ∘} C.« less

Strain effects on oxygen vacancy energetics in KTaO 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xi, Jianqi; Xu, Haixuan; Zhang, Yanwen

Due to lattice mismatch between epitaxial films and substrates, in-plane strain fields are produced in the thin films, with accompanying structural distortions, and ion implantation can be used to controllably engineer the strain throughout the film. Because of the strain profile, local defect energetics are changed. In this study, the effects of in-plane strain fields on the formation and migration of oxygen vacancies in KTaO 3 are investigated using first-principles calculations. In particular, the doubly positive charged oxygen vacancy (V 2+O) is studied, which is considered to be the main charge state of the oxygen vacancy in KTaO 3. Wemore » find that the formation energies for oxygen vacancies are sensitive to in-plane strain and oxygen position. The local atomic configuration is identified, and strong relaxation of local defect structure is mainly responsible for the formation characteristics of these oxygen vacancies. Based on the computational results, formation-dependent site preferences for oxygen vacancies are expected to occur under epitaxial strain, which can result in orders of magnitude differences in equilibrium vacancy concentrations on different oxygen sites. In addition, all possible migration pathways, including intra- and inter-plane diffusions, are considered. In contrast to the strain-enhanced intra-plane diffusion, the diffusion in the direction normal to the strained plane is impeded under the epitaxial strain field. Lastly, these anisotropic diffusion processes can further enhance site preferences.« less

Strain effects on oxygen vacancy energetics in KTaO 3

DOE PAGES

Xi, Jianqi; Xu, Haixuan; Zhang, Yanwen; ...

2017-02-07

Due to lattice mismatch between epitaxial films and substrates, in-plane strain fields are produced in the thin films, with accompanying structural distortions, and ion implantation can be used to controllably engineer the strain throughout the film. Because of the strain profile, local defect energetics are changed. In this study, the effects of in-plane strain fields on the formation and migration of oxygen vacancies in KTaO 3 are investigated using first-principles calculations. In particular, the doubly positive charged oxygen vacancy (V 2+O) is studied, which is considered to be the main charge state of the oxygen vacancy in KTaO 3. Wemore » find that the formation energies for oxygen vacancies are sensitive to in-plane strain and oxygen position. The local atomic configuration is identified, and strong relaxation of local defect structure is mainly responsible for the formation characteristics of these oxygen vacancies. Based on the computational results, formation-dependent site preferences for oxygen vacancies are expected to occur under epitaxial strain, which can result in orders of magnitude differences in equilibrium vacancy concentrations on different oxygen sites. In addition, all possible migration pathways, including intra- and inter-plane diffusions, are considered. In contrast to the strain-enhanced intra-plane diffusion, the diffusion in the direction normal to the strained plane is impeded under the epitaxial strain field. Lastly, these anisotropic diffusion processes can further enhance site preferences.« less

Ion penetration depth in the plant cell wall

NASA Astrophysics Data System (ADS)

Yu, L. D.; Vilaithong, T.; Phanchaisri, B.; Apavatjrut, P.; Anuntalabhochai, S.; Evans, P.; Brown, I. G.

2003-05-01

This study investigates the depth of ion penetration in plant cell wall material. Based on the biological structure of the plant cell wall, a physical model is proposed which assumes that the wall is composed of randomly orientated layers of cylindrical microfibrils made from cellulose molecules of C 6H 12O 6. With this model, we have determined numerical factors for ion implantation in the plant cell wall to correct values calculated from conventional ion implantation programs. Using these correction factors, it is possible to apply common ion implantation programs to estimate the ion penetration depth in the cell for bioengineering purposes. These estimates are compared with measured data from experiments and good agreement is achieved.

Ion implanted dielectric elastomer circuits

NASA Astrophysics Data System (ADS)

O'Brien, Benjamin M.; Rosset, Samuel; Anderson, Iain A.; Shea, Herbert R.

2013-06-01

Starfish and octopuses control their infinite degree-of-freedom arms with panache—capabilities typical of nature where the distribution of reflex-like intelligence throughout soft muscular networks greatly outperforms anything hard, heavy, and man-made. Dielectric elastomer actuators show great promise for soft artificial muscle networks. One way to make them smart is with piezo-resistive Dielectric Elastomer Switches (DES) that can be combined with artificial muscles to create arbitrary digital logic circuits. Unfortunately there are currently no reliable materials or fabrication process. Thus devices typically fail within a few thousand cycles. As a first step in the search for better materials we present a preliminary exploration of piezo-resistors made with filtered cathodic vacuum arc metal ion implantation. DES were formed on polydimethylsiloxane silicone membranes out of ion implanted gold nano-clusters. We propose that there are four distinct regimes (high dose, above percolation, on percolation, low dose) in which gold ion implanted piezo-resistors can operate and present experimental results on implanted piezo-resistors switching high voltages as well as a simple artificial muscle inverter. While gold ion implanted DES are limited by high hysteresis and low sensitivity, they already show promise for a range of applications including hysteretic oscillators and soft generators. With improvements to implanter process control the promise of artificial muscle circuitry for soft smart actuator networks could become a reality.

Gallium nitride junction field-effect transistor

DOEpatents

Zolper, J.C.; Shul, R.J.

1999-02-02

An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

NASA Technical Reports Server (NTRS)

Spitzer, M. B.

1983-01-01

For the ion implantation tooling was fabricated with which to hold dendritic web samples. This tooling permits the expeditious boron implantation of the back to form the back surface field (BSF). Baseline BSF web cells were fabricated.

RTV silicone rubber surface modification for cell biocompatibility by negative-ion implantation

NASA Astrophysics Data System (ADS)

Zheng, Chenlong; Wang, Guangfu; Chu, Yingjie; Xu, Ya; Qiu, Menglin; Xu, Mi

2016-03-01

A negative cluster ion implantation system was built on the injector of a GIC4117 tandem accelerator. Next, the system was used to study the surface modification of room temperature vulcanization silicone rubber (RTV SR) for cell biocompatibility. The water contact angle was observed to decrease from 117.6° to 99.3° as the C1- implantation dose was increased to 1 × 1016 ions/cm2, and the effects of C1-, C2- and O1- implantation result in only small differences in the water contact angle at 3 × 1015 ions/cm2. These findings indicate that the hydrophilicity of RTV SR improves as the dose is increased and that the radiation effect has a greater influence than the doping effect on the hydrophilicity. There are two factors influence hydrophilicity of RTV: (1) based on the XPS and ATR-FTIR results, it can be inferred that ion implantation breaks the hydrophobic functional groups (Sisbnd CH3, Sisbnd Osbnd Si, Csbnd H) of RTV SR and generates hydrophilic functional groups (sbnd COOH, sbnd OH, Sisbnd (O)x (x = 3,4)). (2) SEM reveals that the implanted surface of RTV SR appears the micro roughness such as cracks and wrinkles. The hydrophilicity should be reduced due to the lotus effect (Zhou Rui et al., 2009). These two factors cancel each other out and make the C-implantation sample becomes more hydrophilic in general terms. Finally, cell culture demonstrates that negative ion-implantation is an effective method to improve the cell biocompatibility of RTV SR.

Surface insulating properties of titanium implanted alumina ceramics by plasma immersion ion implantation

NASA Astrophysics Data System (ADS)

Zhu, Mingdong; Song, Falun; Li, Fei; Jin, Xiao; Wang, Xiaofeng; Wang, Langping

2017-09-01

The insulating property of the alumina ceramic in vacuum under high voltage is mainly limited by its surface properties. Plasma immersion ion implantation (PIII) is an effective method to modify the surface chemical and physical properties of the alumina ceramic. In order to improve the surface flashover voltage of the alumina ceramic in vacuum, titanium ions with an energy of about 20 keV were implanted into the surface of the alumina ceramic using the PIII method. The surface properties of the as-implanted samples, such as the chemical states of the titanium, morphology and surface resistivity, were characterized by X-ray photoelectron spectroscopy, scanning electron microscope and electrometer, respectively. The surface flashover voltages of the as-implanted alumina samples were measured by a vacuum surface flashover experimental system. The XPS spectra revealed that a compound of Ti, TiO2 and Al2O3 was formed in the inner surface of the alumina sample. The electrometer results showed that the surface resistivity of the implanted alumina decreased with increased implantation time. In addition, after the titanium ion implantation, the maximum hold-off voltage of alumina was increased to 38.4 kV, which was 21.5% higher than that of the unimplanted alumina ceramic.

Cd ion implantation in AlN

NASA Astrophysics Data System (ADS)

Miranda, S. M. C.; Franco, N.; Alves, E.; Lorenz, K.

2012-10-01

AlN thin films were implanted with cadmium, to fluences of 1 × 1013 and 8 × 1014 at/cm2. The implanted samples were annealed at 950 °C under flowing nitrogen. Although implantation damage in AlN is known to be extremely stable the crystal could be fully recovered at low fluences. At high fluences the implantation damage was only partially removed. Implantation defects cause an expansion of the c-lattice parameter. For the high fluence sample the lattice site location of the ions was studied by Rutherford Backscattering/Channelling Spectrometry. Cd ions are found to be incorporated in substitutional Al sites in the crystal and no significant diffusion is seen upon thermal annealing. The observed high solubility limit and site stability are prerequisite for using Cd as p-type dopant in AlN.

An ultrasonically powered implantable micro-oxygen generator (IMOG).

PubMed

Maleki, Teimour; Cao, Ning; Song, Seung Hyun; Kao, Chinghai; Ko, Song-Chu Arthur; Ziaie, Babak

2011-11-01

In this paper, we present an ultrasonically powered implantable micro-oxygen generator (IMOG) that is capable of in situ tumor oxygenation through water electrolysis. Such active mode of oxygen generation is not affected by increased interstitial pressure or abnormal blood vessels that typically limit the systemic delivery of oxygen to hypoxic regions of solid tumors. Wireless ultrasonic powering (2.15 MHz) was employed to increase the penetration depth and eliminate the directional sensitivity associated with magnetic methods. In addition, ultrasonic powering allowed for further reduction in the total size of the implant by eliminating the need for a large area inductor. IMOG has an overall dimension of 1.2 mm × 1.3 mm × 8 mm, small enough to be implanted using a hypodermic needle or a trocar. In vitro and ex vivo experiments showed that IMOG is capable of generating more than 150 μA which, in turn, can create 0.525 μL/min of oxygen through electrolytic disassociation. In vivo experiments in a well-known hypoxic pancreatic tumor models (1 cm (3) in size) also verified adequate in situ tumor oxygenation in less than 10 min.

Extended Lindhard-Scharf-Schiott Theory for Ion Implantation Profiles Expressed with Pearson Function

NASA Astrophysics Data System (ADS)

Suzuki, Kunihiro

2009-04-01

Ion implantation profiles are expressed by the Pearson function with first, second, third, and fourth moment parameters of Rp, ΔRp, γ, and β. We derived an analytical model for these profile moments by solving a Lindhard-Scharf-Schiott (LSS) integration equation using perturbation approximation. This analytical model reproduces Monte Carlo data that were well calibrated to reproduce a vast experimental database. The extended LSS theory is vital for instantaneously predicting ion implantation profiles with any combination of incident ions and substrate atoms including their energy dependence.

Method and apparatus for plasma source ion implantation

DOEpatents

Conrad, J.R.

1988-08-16

Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner. 7 figs.

Method and apparatus for plasma source ion implantation

DOEpatents

Conrad, John R.

1988-01-01

Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner.

Long-range effect in nitrogen ion-implanted AISI 316L stainless steel

NASA Astrophysics Data System (ADS)

Budzynski, P.

2015-01-01

The effect of nitrogen ion implantation on AISI 316L stainless steel was investigated. The microstructure and composition of an N implanted layer were studied by RBS, GIXRD, SEM, and EDX measurements. Friction and wear tests were also performed. The discrepancy between the measured and calculated stopped ion maximum range does not exceed 0.03 μm. After nitrogen implantation with a fluence of 5 × 1017 ion/cm2, additional phases of expanded austenite were detected. At a 5-fold larger depth than the maximum ion range, improvement in the coefficient of friction and wear was detected. We have shown, for the first time, the long-range effect in tribological investigations. The long-range effect is caused by movement of not only defects along the depth of the sample, as assumed so far, but also nitrogen atoms.

Resistive switching based on filaments in metal/PMMA/metal thin film devices

NASA Astrophysics Data System (ADS)

Wolf, Christoph; Nau, Sebastian; Sax, Stefan; Busby, Yan; Pireaux, Jean-Jacques; List-Kratochvil, Emil J. W.

2015-12-01

The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.

Electrical conduction in 100 keV Kr+ ion implanted poly (ethylene terephthalate)

NASA Astrophysics Data System (ADS)

Goyal, P. K.; Kumar, V.; Gupta, Renu; Mahendia, S.; Anita, Kumar, S.

2012-06-01

Polyethylene terephthalate (PET) samples have been implanted to 100 keV Kr+ ions at the fluences 1×1015-- 1×1016 cm-2. From I-V characteristics, the conduction mechanism was found to be shifted from ohmic to space charge limited conduction (SCLC) after implantation. The surface conductivity of these implanted samples was found to increase with increasing implantation dose. The structural alterations in the Raman spectra of implanted PET samples indicate that such an increase in the conductivity may be attributed to the formation of conjugated double bonded carbonaceous structure in the implanted layer of PET.

Studies on the surface modification of TiN coatings using MEVVA ion implantation with selected metallic species

NASA Astrophysics Data System (ADS)

Ward, L. P.; Purushotham, K. P.; Manory, R. R.

2016-02-01

Improvement in the performance of TiN coatings can be achieved using surface modification techniques such as ion implantation. In the present study, physical vapor deposited (PVD) TiN coatings were implanted with Cr, Zr, Nb, Mo and W using the metal evaporation vacuum arc (MEVVA) technique at a constant nominal dose of 4 × 1016 ions cm-2 for all species. The samples were characterized before and after implantation, using Rutherford backscattering (RBS), glancing incident angle X-ray diffraction (GIXRD), atomic force microscopy (AFM) and optical microscopy. Friction and wear studies were performed under dry sliding conditions using a pin-on-disc CSEM Tribometer at 1 N load and 450 m sliding distance. A reduction in the grain size and surface roughness was observed after implantation with all five species. Little variation was observed in the residual stress values for all implanted TiN coatings, except for W implanted TiN which showed a pronounced increase in compressive residual stress. Mo-implanted samples showed a lower coefficient of friction and higher resistance to breakdown during the initial stages of testing than as-received samples. Significant reduction in wear rate was observed after implanting with Zr and Mo ions compared with unimplanted TiN. The presence of the Ti2N phase was observed with Cr implantation.

Lattice modification in KTiOPO4 by hydrogen and helium sequentially implantation in submicrometer depth

NASA Astrophysics Data System (ADS)

Ma, Changdong; Lu, Fei; Xu, Bo; Fan, Ranran

2016-05-01

We investigated lattice modification and its physical mechanism in H and He co-implanted, z-cut potassium titanyl phosphate (KTiOPO4). The samples were implanted with 110 keV H and 190 keV He, both to a fluence of 4 × 1016 cm-2, at room temperature. Rutherford backscattering/channeling, high-resolution x-ray diffraction, and transmission electron microscopy were used to examine the implantation-induced structural changes and strain. Experimental and simulated x-ray diffraction results show that the strain in the implanted KTiOPO4 crystal is caused by interstitial atoms. The strain and stress are anisotropic and depend on the crystal's orientation. Transmission electron microscopy studies indicate that ion implantation produces many dislocations in the as-implanted samples. Annealing can induce ion aggregation to form nanobubbles, but plastic deformation and ion out-diffusion prevent the KTiOPO4 surface from blistering.

Longitudinal In Vivo Imaging to Assess Blood Flow and Oxygenation in Implantable Engineered Tissues

PubMed Central

White, Sean M.; Hingorani, Ryan; Arora, Rajan P.S.; Hughes, Christopher C.W.; George, Steven C.

2012-01-01

The functionality of vascular networks within implanted prevascularized tissues is difficult to assess using traditional analysis techniques, such as histology. This is largely due to the inability to visualize hemodynamics in vivo longitudinally. Therefore, we have developed dynamic imaging methods to measure blood flow and hemoglobin oxygen saturation in implanted prevascularized tissues noninvasively and longitudinally. Using laser speckle imaging, multispectral imaging, and intravital microscopy, we demonstrate that fibrin-based tissue implants anastomose with the host (severe combined immunodeficient mice) in as short as 20 h. Anastomosis results in initial perfusion with highly oxygenated blood, and an increase in average hemoglobin oxygenation of 53%. However, shear rates in the preformed vessels were low (20.8±12.8 s−1), and flow did not persist in the vast majority of preformed vessels due to thrombus formation. These findings suggest that designing an appropriate vascular network structure in prevascularized tissues to maintain shear rates above the threshold for thrombosis may be necessary to maintain flow following implantation. We conclude that wide-field and microscopic functional imaging can dynamically assess blood flow and oxygenation in vivo in prevascularized tissues, and can be used to rapidly evaluate and improve prevascularization strategies. PMID:22435776

Effects of Mn Ion Implantation on XPS Spectroscopy of GaN Thin Films

NASA Astrophysics Data System (ADS)

Majid, Abdul; Ahmad, Naeem; Rizwan, Muhammad; Khan, Salah Ud-Din; Ali, Fekri Abdulraqeb Ahmed; Zhu, Jianjun

2018-02-01

Gallium nitride (GaN) thin film was deposited onto a sapphire substrate and then implanted with 250 keV Mn ions at two different doses of 2 × 1016 ions/cm2 and 5 × 1016 ions/cm2. The as-grown and post-implantation-thermally-annealed samples were studied in detail using x-ray photoelectron spectroscopy (XPS). The XPS peaks of Ga 3 d, Ga 2 p, N 1 s, Mn 2 p and C 1 s were recorded in addition to a full survey of the samples. The doublet peaks of Ga 2 p for pure GaN were observed blue-shifted when compared with elemental Ga, and appeared further shifted to higher energies for the implanted samples. These observations point to changes in the bonds and the chemical environment of the host as a result of ion implantation. The results revealed broadening of the N 1 s peak after implantation, which is interpreted in terms of the presence of N-Mn bonds in addition to N-Ga bonds. The XPS spectra of Mn 2 p recorded for ion-implanted samples indicated splitting of Mn 2 p 1/2 and Mn 2 p 3/2 peaks higher than that for metallic Mn, which helps rule out the possibility of clustering and points to substitutional doping of Mn. These observations provide a framework that sheds light on the local environment of the material for understanding the mechanism of magnetic exchange interactions in Mn:GaN based diluted magnetic semiconductors.

P-type single-crystalline ZnO films obtained by (Na,N) dual implantation through dynamic annealing process

NASA Astrophysics Data System (ADS)

Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

2018-02-01

Single-crystalline ZnO films were grown by plasma-assisted molecular beam epitaxy technique on c-plane sapphire substrates. The films have been implanted with fixed fluence of 130 keV Na and 90 keV N ions at 460 °C. It is observed that dually-implanted single crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 1.24 × 1016-1.34 × 1017 cm-3, hole mobilities between 0.65 and 8.37 cm2 V-1 s-1, and resistivities in the range of 53.3-80.7 Ω cm by Hall-effect measurements. There are no other secondary phase appearing, with (0 0 2) (c-plane) orientation after ion implantation as identified by the X-ray diffraction pattern. It is obtained that Na and N ions were successfully implanted and activated as acceptors measured by XPS and SIMS results. Also compared to other similar studies, lower amount of Na and N ions make p-type characteristics excellent as others deposited by traditional techniques. It is concluded that Na and N ion implantation and dynamic annealing are essential in forming p-type single-crystalline ZnO films.

Maximization of DRAM yield by control of surface charge and particle addition during high dose implantation

NASA Astrophysics Data System (ADS)

Horvath, J.; Moffatt, S.

1991-04-01

Ion implantation processing exposes semiconductor devices to an energetic ion beam in order to deposit dopant ions in shallow layers. In addition to this primary process, foreign materials are deposited as particles and surface films. The deposition of particles is a major cause of IC yield loss and becomes even more significant as device dimensions are decreased. Control of particle addition in a high-volume production environment requires procedures to limit beamline and endstation sources, control of particle transport, cleaning procedures and a well grounded preventative maintenance philosophy. Control of surface charge by optimization of the ion beam and electron shower conditions and measurement with a real-time charge sensor has been effective in improving the yield of NMOS and CMOS DRAMs. Control of surface voltages to a range between 0 and -20 V was correlated with good implant yield with PI9200 implanters for p + and n + source-drain implants.

Ion Implantation Doping of Inertial Confinement Fusion Targets

DOE PAGES

Shin, S. J.; Lee, J. R. I.; van Buuren, T.; ...

2017-12-19

Controlled doping of inertial confinement fusion (ICF) targets is needed to enable nuclear diagnostics of implosions. Here in this study, we demonstrate that ion implantation with a custom-designed carousel holder can be used for azimuthally uniform doping of ICF fuel capsules made from a glow discharge polymer (GDP). Particular emphasis is given to the selection of the initial wall thickness of GDP capsules as well as implantation and postimplantation annealing parameters in order to minimize capsule deformation during a postimplantation thermal treatment step. In contrast to GDP, ion-implanted high-density carbon exhibits excellent thermal stability and ~100% implantation efficiency for themore » entire range of ion doses studied (2 × 10 14 to 1 × 10 16 cm -2) and for annealing temperatures up to 700°C. Lastly, we demonstrate a successful doping of planar Al targets with isotopes of Kr and Xe to doses of ~10 17 cm -2.« less

Ion Implantation Doping of Inertial Confinement Fusion Targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, S. J.; Lee, J. R. I.; van Buuren, T.

Controlled doping of inertial confinement fusion (ICF) targets is needed to enable nuclear diagnostics of implosions. Here in this study, we demonstrate that ion implantation with a custom-designed carousel holder can be used for azimuthally uniform doping of ICF fuel capsules made from a glow discharge polymer (GDP). Particular emphasis is given to the selection of the initial wall thickness of GDP capsules as well as implantation and postimplantation annealing parameters in order to minimize capsule deformation during a postimplantation thermal treatment step. In contrast to GDP, ion-implanted high-density carbon exhibits excellent thermal stability and ~100% implantation efficiency for themore » entire range of ion doses studied (2 × 10 14 to 1 × 10 16 cm -2) and for annealing temperatures up to 700°C. Lastly, we demonstrate a successful doping of planar Al targets with isotopes of Kr and Xe to doses of ~10 17 cm -2.« less

Ion implantation for manufacturing bent and periodically bent crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bellucci, Valerio; Camattari, Riccardo; Guidi, Vincenzo, E-mail: guidi@fe.infn.it

2015-08-10

Ion implantation is proposed to produce self-standing bent monocrystals. A Si sample 0.2 mm thick was bent to a radius of curvature of 10.5 m. The sample curvature was characterized by interferometric measurements; the crystalline quality of the bulk was tested by X-ray diffraction in transmission geometry through synchrotron light at ESRF (Grenoble, France). Dislocations induced by ion implantation affect only a very superficial layer of the sample, namely, the damaged region is confined in a layer 1 μm thick. Finally, an elective application of a deformed crystal through ion implantation is here proposed, i.e., the realization of a crystalline undulator to producemore » X-ray beams.« less

Ion beam synthesis of ZrC{sub x}O{sub y} nanoparticles in cubic zirconia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velişa, Gihan, E-mail: gihan@tandem.nipne.ro; Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O.B. MG-6, 077125 Magurele; Mylonas, Stamatis

2016-04-28

{110}-oriented yttria-stabilized zirconia single crystals have been implanted with low-energy C ions in an axial direction, at room temperature and at 550 °C. Room temperature ion implantation generated a damage layer that contains the expected dislocation loop clusters. Strikingly, the high temperature implantation produced zirconium oxycarbide nanoparticles (ZrC{sub x}O{sub y}) at a shallow depth in the yttria-stabilized cubic zirconia crystal, with a diameter in the range of 4–10 nm. Moreover, in the high concentration region of implanted C ions, between 100 and 150 nm below the surface, a number of large precipitates, up to 20 nm, were observed.

All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Goto, Ken; Morikawa, Yoji; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka

2018-06-01

A vertical β-Ga2O3 metal–oxide–semiconductor field-effect transistor featuring a planar-gate architecture is presented. The device was fabricated by an all-ion-implanted process without requiring trench etching or epitaxial regrowth. A Mg-ion-implanted current blocking layer (CBL) provided electrical isolation between the source and the drain except at an aperture opening through which drain current was conducted. Successful transistor action was realized by gating a Si-ion-implanted channel above the CBL. Thermal diffusion of Mg induced a large source–drain leakage current through the CBL, which resulted in compromised off-state device characteristics as well as a reduced peak extrinsic transconductance compared with the results of simulations.

Super-hard cubic BN layer formation by nitrogen ion implantation

NASA Astrophysics Data System (ADS)

Komarov, F. F.; Pilko, V. V.; Yakushev, V. A.; Tishkov, V. S.

1994-11-01

Microcrystalline and amorphous boron thin films were implanted with nitrogen ions at energies from 25 to 125 keV and with doses from 2 × 10 17 to 1 × 10 18 at.cm 2 at temperatures below 200°C. The structure of boron nitride phases after ion implantation, formation of phases and phase transformations were investigated by TEM and TED methods. The cubic boron nitride phase is revealed. The microhardness of the formed films was satisfactorily explained in terms of chemical compound formation by polyenergetic ion implantation. The influence of the copper impurity on the formation of the cubic boron nitride phase is demonstrated. It has also been shown that low concentrations of copper promote cubic BN boundary formation.

Method of making an ion-implanted planar-buried-heterostructure diode laser

DOEpatents

Brennan, Thomas M.; Hammons, Burrell E.; Myers, David R.; Vawter, Gregory A.

1992-01-01

Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

Less-Costly Ion Implantation of Solar Cells

NASA Technical Reports Server (NTRS)

Fitzgerald, D. J.

1984-01-01

Experiments point way toward more relaxed controls over ion-implanation dosage and uniformity in solar-cell fabrication. Data indicate cell performance, measured by output current density at fixed voltage, virtually same whether implant is particular ion species or broad-beam mixture of several species.

Multi-scale, multi-modal analysis uncovers complex relationship at the brain tissue-implant neural interface: new emphasis on the biological interface

NASA Astrophysics Data System (ADS)

Michelson, Nicholas J.; Vazquez, Alberto L.; Eles, James R.; Salatino, Joseph W.; Purcell, Erin K.; Williams, Jordan J.; Cui, X. Tracy; Kozai, Takashi D. Y.

2018-06-01

Objective. Implantable neural electrode devices are important tools for neuroscience research and have an increasing range of clinical applications. However, the intricacies of the biological response after implantation, and their ultimate impact on recording performance, remain challenging to elucidate. Establishing a relationship between the neurobiology and chronic recording performance is confounded by technical challenges related to traditional electrophysiological, material, and histological limitations. This can greatly impact the interpretations of results pertaining to device performance and tissue health surrounding the implant. Approach. In this work, electrophysiological activity and immunohistological analysis are compared after controlling for motion artifacts, quiescent neuronal activity, and material failure of devices in order to better understand the relationship between histology and electrophysiological outcomes. Main results. Even after carefully accounting for these factors, the presence of viable neurons and lack of glial scarring does not convey single unit recording performance. Significance. To better understand the biological factors influencing neural activity, detailed cellular and molecular tissue responses were examined. Decreases in neural activity and blood oxygenation in the tissue surrounding the implant, shift in expression levels of vesicular transporter proteins and ion channels, axon and myelin injury, and interrupted blood flow in nearby capillaries can impact neural activity around implanted neural interfaces. Combined, these tissue changes highlight the need for more comprehensive, basic science research to elucidate the relationship between biology and chronic electrophysiology performance in order to advance neural technologies.

A hot implantation study on the evolution of defects in He ion implanted MgO(1 0 0)

NASA Astrophysics Data System (ADS)

Fedorov, A. V.; van Huis, M. A.; van Veen, A.

2002-05-01

Ion implantation at elevated temperature, so-called hot implantation, was used to study nucleation and thermal stability of the defects. In this work, MgO(1 0 0) single crystal samples were implanted with 30 keV He ions at various implantation temperatures. The implantation doses ranged from 10 14 to 10 16 cm -2. The implantation introduced defects were subsequently studied by thermal helium desorption spectroscopy (THDS) and Doppler broadening positron beam analysis (PBA). The THDS study provides vital information on the kinetics of He release from the sample. PBA technique, being sensitive to the open volume defects, provides complementary information on cavity evolution. The THD study has shown that in most cases helium release is characterised by the activation energy of Q=4.7±0.5 eV with the maximum release temperature of Tmax=1830 K. By applying first order desorption model the pre-exponent factor is estimated as ν=4.3×10 11 s -1.

Down to 2 nm Ultra Shallow Junctions : Fabrication by IBS Plasma Immersion Ion Implantation Prototype PULSION registered

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torregrosa, Frank; Etienne, Hasnaa; Mathieu, Gilles

Classical beam line implantation is limited in low energies and cannot achieve P+/N junctions requirements for <45nm node. Compared to conventional beam line ion implantation, limited to a minimum of about 200 eV, the efficiency of Plasma Immersion Ion Implantation (PIII) is no more to prove for the realization of Ultra Shallow Junctions (USJ) in semiconductor applications: this technique allows to get ultimate shallow profiles (as implanted) thanks to no lower limitation of energy and offers high dose rate. In the field of the European consortium NANOCMOS, Ultra Shallow Junctions implanted on a semi-industrial PIII prototype (PULSION registered ) designedmore » by the French company IBS, have been studied. Ultra shallow junctions implanted with BF3 at acceleration voltages down to 20V were realized. Contamination level, homogeneity and depth profile are studied. The SIMS profiles obtained show the capability to make ultra shallow profiles (as implanted) down to 2nm.« less

Controlled deterministic implantation by nanostencil lithography at the limit of ion-aperture straggling

NASA Astrophysics Data System (ADS)

Alves, A. D. C.; Newnham, J.; van Donkelaar, J. A.; Rubanov, S.; McCallum, J. C.; Jamieson, D. N.

2013-04-01

Solid state electronic devices fabricated in silicon employ many ion implantation steps in their fabrication. In nanoscale devices deterministic implants of dopant atoms with high spatial precision will be needed to overcome problems with statistical variations in device characteristics and to open new functionalities based on controlled quantum states of single atoms. However, to deterministically place a dopant atom with the required precision is a significant technological challenge. Here we address this challenge with a strategy based on stepped nanostencil lithography for the construction of arrays of single implanted atoms. We address the limit on spatial precision imposed by ion straggling in the nanostencil—fabricated with the readily available focused ion beam milling technique followed by Pt deposition. Two nanostencils have been fabricated; a 60 nm wide aperture in a 3 μm thick Si cantilever and a 30 nm wide aperture in a 200 nm thick Si3N4 membrane. The 30 nm wide aperture demonstrates the fabricating process for sub-50 nm apertures while the 60 nm aperture was characterized with 500 keV He+ ion forward scattering to measure the effect of ion straggling in the collimator and deduce a model for its internal structure using the GEANT4 ion transport code. This model is then applied to simulate collimation of a 14 keV P+ ion beam in a 200 nm thick Si3N4 membrane nanostencil suitable for the implantation of donors in silicon. We simulate collimating apertures with widths in the range of 10-50 nm because we expect the onset of J-coupling in a device with 30 nm donor spacing. We find that straggling in the nanostencil produces mis-located implanted ions with a probability between 0.001 and 0.08 depending on the internal collimator profile and the alignment with the beam direction. This result is favourable for the rapid prototyping of a proof-of-principle device containing multiple deterministically implanted dopants.

Porcelain-coated antenna for radio-frequency driven plasma source

DOEpatents

Leung, K.N.; Wells, R.P.; Craven, G.E.

1996-12-24

A new porcelain-enamel coated antenna creates a clean plasma for volume or surface-conversion ion sources. The porcelain-enamel coating is hard, electrically insulating, long lasting, non fragile, and resistant to puncture by high energy ions in the plasma. Plasma and ion production using the porcelain enamel coated antenna is uncontaminated with filament or extraneous metal ions because the porcelain does not evaporate and is not sputtered into the plasma during operation. Ion beams produced using the new porcelain-enamel coated antenna are useful in ion implantation, high energy accelerators, negative, positive, or neutral beam applications, fusion, and treatment of chemical or radioactive waste for disposal. For ion implantation, the appropriate species ion beam generated with the inventive antenna will penetrate large or small, irregularly shaped conducting objects with a narrow implantation profile. 8 figs.

Stopping power for 4.8-6.8 MeV C ions along [1 1 0] and [1 1 1] directions in Si

NASA Astrophysics Data System (ADS)

Yoneda, Tomoaki; Horikawa, Junsei; Saijo, Satoshi; Arakawa, Masakazu; Yamamoto, Yukio; Yamamoto, Yasukazu

2018-06-01

The stopping power for C ions with energies in the range of 4.8-6.8 MeV were investigated in a SIMOX (Separation by IMplanted OXygen into silicon) structure of Si(1 0 0)/SiO2/Si(1 0 0). Backscattering spectra were measured for random and channeling incidence along the [1 1 0] and [1 1 1] axes. The scattering angle was set to 90° to avoid an excessive decrease of the kinematic factor. The ratios of [1 1 0] and [1 1 1] channeling to the random stopping power were determined to be around 0.65 and 0.77 for 4.8-6.8 MeV ions, respectively. The validity of the impact parameter dependent stopping power calculated using Grande and Schiwietz's CasP (convolution approximation for swift particles) code was confirmed. The C ion trajectories and flux distributions in crystalline silicon were calculated by Monte Carlo simulation. The stopping power calculated with the CasP code is almost in agreement with the experimental results within the accuracy of measurement.

Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malau, Viktor, E-mail: malau@ugm.ac.id; Ilman, Mochammad Noer, E-mail: noer-ilman@yahoo.com; Iswanto, Priyo Tri, E-mail: priyatri@yahoo.com

Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressuremore » of 7.6 x 10{sup −2} torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10{sup −6} mbar, a fluence of 2 x 10{sup 17} ions/cm{sup 2}, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.« less

Formation of inorganic electride thin films via site-selective extrusion by energetic inert gas ions

NASA Astrophysics Data System (ADS)

Miyakawa, Masashi; Toda, Yoshitake; Hayashi, Katsuro; Hirano, Masahiro; Kamiya, Toshio; Matsunami, Noriaki; Hosono, Hideo

2005-01-01

Inert gas ion implantation (acceleration voltage 300kV) into polycrystalline 12CaO.7Al2O3 (C12A7) films was investigated with fluences from 1×1016 to 1×1017cm-2 at elevated temperatures. Upon hot implantation at 600°C with fluences greater than 1×1017cm-2, the obtained films were colored and exhibited high electrical conductivity in the as-implanted state. The extrusion of O2- ions encaged in the crystallographic cages of C12A7 crystal, which leaves electrons in the cages at concentrations up to ˜1.4×1021cm-3, may cause the high electrical conductivity. On the other hand, when the fluence is less than 1×1017cm-2, the as-implanted films are optically transparent and electrically insulating. The conductivity is enhanced and the films become colored by irradiating with ultraviolet light due to the formation of F +-like centers. The electrons forming the F+-like centers are photo released from the encaged H- ions, which are presumably derived from the preexisting OH- groups. The induced electron concentration is proportional to the calculated displacements per atom, which suggests that nuclear collision effects of the implanted ions play a dominant role in forming the electron and H- ion in the films. The hot ion implantation technique provides a nonchemical process for preparing electronic conductive C12A7 films.

Increased Biocompatibility and Bioactivity after Energetic PVD Surface Treatments

PubMed Central

Mändl, Stephan

2009-01-01

Ion implantation, a common technology in semiconductor processing, has been applied to biomaterials since the 1960s. Using energetic ion bombardment, a general term which includes conventional ion implantation plasma immersion ion implantation (PIII) and ion beam assisted thin film deposition, functionalization of surfaces is possible. By varying and adjusting the process parameters, several surface properties can be attuned simultaneously. Extensive research details improvements in the biocompatibility, mainly by reducing corrosion rates and increasing wear resistance after surface modification. Recently, enhanced bioactivity strongly correlated with the surface topography and less with the surface chemistry has been reported, with an increased roughness on the nanometer scale induced by self-organisation processes during ion bombardment leading to faster cellular adhesion processes.

Friction wear and auger analysis of iron implanted with 1.5-MeV nitrogen ions

NASA Technical Reports Server (NTRS)

Ferrante, J.; Jones, W. R., Jr.

1982-01-01

The effect of implantation of 1.5-MeV nitrogen ions on the friction and wear characteristics of pure iron sliding against steel was studied in a pin-on disk apparatus. An implantation dose of 5 x 10 to the 17th power ions/sq cm was used. Small reductions in initial and steady-state wear rates were observed for nitrogen-implanted iron riders as compared with unimplanted controls. Auger electron spectroscopy revealed a subsurface Gaussian nitrogen distribution with a maximum concentration of 15 at. % at a depth of 8 x 10 to the -7th m. A similar analysis within the wear scar of an implanted rider after 20 microns of wear yielded only background nitrogen concentration, thus giving no evidence for diffusion of nitrogen beyond the implanted range.

Effects of CPII implantation on the characteristics of diamond-like carbon films

NASA Astrophysics Data System (ADS)

Chen, Ya-Chi; Weng, Ko-Wei; Chao, Ching-Hsun; Lien, Shui-Yang; Han, Sheng; Chen, Tien-Lai; Lee, Ying-Chieh; Shih, Han-Chang; Wang, Da-Yung

2009-05-01

A diamond-like carbon film (DLC) was successfully synthesized using a hybrid PVD process, involving a filter arc deposition source (FAD) and a carbon plasma ion implanter (CPII). A quarter-torus plasma duct filter markedly reduced the density of the macro-particles. Graphite targets were used in FAD. Large electron and ion energies generated from the plasma duct facilitate the activation of carbon plasma and the deposition of high-quality DLC films. M2 tool steel was pre-implanted with 45 kV carbon ions before the DLC was deposited to enhance the adhesive and surface properties of the film. The ion mixing effect, the induction of residual stress and the phase transformation at the interface were significantly improved. The hardness of the DLC increased to 47.7 GPa and 56.5 GPa, and the wear life was prolonged to over 70 km with implantation fluences of 1 × 10 17 ions/cm 2 and 2 × 10 17 ions/cm 2, respectively.

Broad beam ion implanter

DOEpatents

Leung, K.N.

1996-10-08

An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes. 6 figs.

Broad beam ion implanter

DOEpatents

Leung, Ka-Ngo

1996-01-01

An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes.

Characterisation of slab waveguides, fabricated in CaF2 and Er-doped tungsten-tellurite glass by MeV energy N+ ion implantation, using spectroscopic ellipsometry and m-line spectroscopy

NASA Astrophysics Data System (ADS)

Bányász, I.; Berneschi, S.; Lohner, T.; Fried, M.; Petrik, P.; Khanh, N. Q.; Zolnai, Z.; Watterich, A.; Bettinelli, M.; Brenci, M.; Nunzi-Conti, G.; Pelli, S.; Righini, G. C.; Speghini, A.

2010-05-01

Slab waveguides were fabricated in Er-doped tungsten-tellurite glass and CaF2 crystal samples via ion implantation. Waveguides were fabricated by implantation of MeV energy N+ ions at the Van de Graaff accelerator of the Research Institute for Particle and Nuclear Physics, Budapest, Hungary. Part of the samples was annealed. Implantations were carried out at energies of 1.5 MeV (tungsten-tellurite glass) and 3.5 MeV (CaF2). The implanted doses were between 5 x 1012 and 8 x 1016 ions/cm2. Refractive index profile of the waveguides was measured using SOPRA ES4G and Woollam M-2000DI spectroscopic ellipsometers at the Research Institute for Technical Physics and Materials Science, Budapest. Functionality of the waveguides was tested using a home-made instrument (COMPASSO), based on m-line spectroscopy and prism coupling technique, which was developed at the Materials and Photonics Devices Laboratory (MDF Lab.) of the Institute of Applied Physics in Sesto Fiorentino, Italy. Results of both types of measurements were compared to depth distributions of nuclear damage in the samples, calculated by SRIM 2007 code. Thicknesses of the guiding layer and of the implanted barrier obtained by spectroscopic ellipsometry correspond well to SRIM simulations. Irradiationinduced refractive index modulation saturated around a dose of 8 x 1016 ions/cm2 in tungsten-tellurite glass. Annealing of the implanted waveguides resulted in a reduction of the propagation loss, but also reduced the number of supported guiding modes at the lower doses. We report on the first working waveguides fabricated in an alkali earth halide crystal implanted by MeV energy medium-mass ions.

Analysis and evalaution in the production process and equipment area of the low-cost solar array project. [including modifying gaseous diffusion and using ion implantation

NASA Technical Reports Server (NTRS)

Goldman, H.; Wolf, M.

1979-01-01

The manufacturing methods for photovoltaic solar energy utilization are assessed. Economic and technical data on the current front junction formation processes of gaseous diffusion and ion implantation are presented. Future proposals, including modifying gaseous diffusion and using ion implantation, to decrease the cost of junction formation are studied. Technology developments in current processes and an economic evaluation of the processes are included.

Surface Passivation and Junction Formation Using Low Energy Hydrogen Implants

NASA Technical Reports Server (NTRS)

Fonash, S. J.

1985-01-01

New applications for high current, low energy hydrogen ion implants on single crystal and polycrystal silicon grain boundaries are discussed. The effects of low energy hydrogen ion beams on crystalline Si surfaces are considered. The effect of these beams on bulk defects in crystalline Si is addressed. Specific applications of H+ implants to crystalline Si processing are discussed. In all of the situations reported on, the hydrogen beams were produced using a high current Kaufman ion source.

Graded Microstructure and Mechanical Performance of Ti/N-Implanted M50 Steel with Polyenergy.

PubMed

Jie, Jin; Shao, Tianmin

2017-10-19

M50 bearing steels were alternately implanted with Ti⁺ and N⁺ ions using solid and gas ion sources of implantation system, respectively. N-implantation was carried out at an energy of about 80 keV and a fluence of 2 × 10 17 ions/cm², and Ti-implantation at an energy of about 40-90 keV and a fluence of 2 × 10 17 ions/cm². The microstructures of modification layers were analyzed by grazing-incidence X-ray diffraction, auger electron spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results showed that the gradient structure was formed under the M50 bearing steel subsurface, along the ion implantation influence zone composed of amorphous, nanocrystalline, and gradient-refinement phases. A layer of precipitation compounds like TiN is formed. In addition, nano-indentation hardness and tribological properties of the gradient structure subsurface were examined using a nano-indenter and a friction and wear tester. The nano-indentation hardness of N + Ti-co-implanted sample is above 12 GPa, ~1.3 times than that of pristine samples. The friction coefficient is smaller than 0.2, which is 22.2% of that of pristine samples. The synergism between precipitation-phase strengthening and gradient microstructure is the main mechanism for improving the mechanical properties of M50 materials.

Graded Microstructure and Mechanical Performance of Ti/N-Implanted M50 Steel with Polyenergy

PubMed Central

Jie, Jin; Shao, Tianmin

2017-01-01

M50 bearing steels were alternately implanted with Ti+ and N+ ions using solid and gas ion sources of implantation system, respectively. N-implantation was carried out at an energy of about 80 keV and a fluence of 2 × 1017 ions/cm2, and Ti-implantation at an energy of about 40–90 keV and a fluence of 2 × 1017 ions/cm2. The microstructures of modification layers were analyzed by grazing-incidence X-ray diffraction, auger electron spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results showed that the gradient structure was formed under the M50 bearing steel subsurface, along the ion implantation influence zone composed of amorphous, nanocrystalline, and gradient-refinement phases. A layer of precipitation compounds like TiN is formed. In addition, nano-indentation hardness and tribological properties of the gradient structure subsurface were examined using a nano-indenter and a friction and wear tester. The nano-indentation hardness of N + Ti-co-implanted sample is above 12 GPa, ~1.3 times than that of pristine samples. The friction coefficient is smaller than 0.2, which is 22.2% of that of pristine samples. The synergism between precipitation-phase strengthening and gradient microstructure is the main mechanism for improving the mechanical properties of M50 materials. PMID:29048360

Mechanical properties of pulsed laser-deposited hydroxyapatite thin films implanted at high energy with N + and Ar + ions. Part II: nano-scratch tests with spherical tipped indenter

NASA Astrophysics Data System (ADS)

Pelletier, H.; Nelea, V.; Mille, P.; Muller, D.

2004-02-01

In this study we report a method to improve the adherence of hydroxyapatite (HA) thin films, using an ion beam implantation treatment. Crystalline HA films were grown by pulsed laser deposition technique (PLD), using an excimer KrF * laser. The films were deposited at room temperature in vacuum on Ti-5Al-2.5Fe alloy substrates previously coated with a ceramic TiN buffer layer and then annealed in ambient air at (500-600) °C. After deposition the films were implanted with N + and Ar + ions accelerated at high energy (1-1.5 MeV range) at a fixed dose of 10 16 cm -2. The intrinsic mechanical resistance and adherence to the TiN buffer layer of the implanted HA films have been evaluated by nano-scratch tests. We used for measurements a spherical indenter with a tip radius of 5 μm. Different scratch tests have been performed on implanted and unimplanted areas of films to put into evidence the effects of N + and Ar + ion implantation process on the films properties. Results show an enhancement of the dynamic mechanical properties in the implanted zones and influence of the nature of the implanted species. The best results are obtained for films implanted with nitrogen.

Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride

NASA Technical Reports Server (NTRS)

Amirtharaj, P. M.; Odell, M. S.; Bowman, R. C., Jr.; Alt, R. L.

1988-01-01

Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.

Photoluminescence and reflectivity of polymethylmethacrylate implanted by low-energy carbon ions at high fluences

NASA Astrophysics Data System (ADS)

Wang, Jun; Zhu, Fei; Zhang, Bei; Liu, Huixian; Jia, Guangyi; Liu, Changlong

2012-11-01

Polymethylmethacrylate (PMMA) specimens were implanted with 30 keV carbon ions in a fluence range of 1 × 1016 to 2 × 1017 cm-2, and photoluminescence (PL) and reflectivity of the implanted samples were examined. A luminescent band with one peak was found in PL spectra excited by 480 nm line, but its intensity did not vary in parallel with ion fluence. The strongest PL occurred at the fluence of 5 × 1016 cm-2. Results from visible-light-excited micro-Raman spectra indicated that the formation of hydrogenated amorphous carbon structures in subsurface layer and their evolutions with ion fluence could be responsible for the observed PL responses. Measurements of the small-angle reflectance spectra from both the implanted and rear surfaces of samples in the ultraviolet-visible (UV-vis) range demonstrated a kind of both fluence-dependent and wavelength-related reflectivity variations, which were attributed to the structural changes induced by ion implantation. A noticeable reflectivity modification, which may be practically used, could be found at the fluence of 1 × 1016 cm-2.

Ion Implantation with in-situ Patterning for IBC Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Graff, John W.

2014-10-24

Interdigitated back-side Contact (IBC) solar cells are the highest efficiency silicon solar cells currently on the market. Unfortunately the cost to produce these solar cells is also very high, due to the large number of processing steps required. Varian believes that only the combination of high efficiency and low cost can meet the stated goal of $1/Wp. The core of this program has been to develop an in-situ patterning capability for an ion implantation system capable of producing patterned doped regions for IBC solar cells. Such a patterning capable ion implanter can reduce the number of process steps required tomore » manufacture IBC cells, and therefore significantly reduce the cost. The present program was organized into three phases. Phase I was to select a patterning approach and determine the patterning requirements for IBC cells. Phase II consists of construction of a Beta ion implantation system containing in-situ patterning capability. Phase III consists of shipping and installation of the ion implant system in a customer factory where it will be tested and proven in a pilot production line.« less

In Vitro Investigation of the Effect of Oral Bacteria in the Surface Oxidation of Dental Implants.

PubMed

Sridhar, Sathyanarayanan; Wilson, Thomas G; Palmer, Kelli L; Valderrama, Pilar; Mathew, Mathew T; Prasad, Shalini; Jacobs, Michael; Gindri, Izabelle M; Rodrigues, Danieli C

2015-10-01

Bacteria are major contributors to the rising number of dental implant failures. Inflammation secondary to bacterial colonization and bacterial biofilm is a major etiological factor associated with early and late implant failure (peri-implantitis). Even though there is a strong association between bacteria and bacterial biofilm and failure of dental implants, their effect on the surface of implants is yet not clear. To develop and establish an in vitro testing methodology to investigate the effect of early planktonic bacterial colonization on the surface of dental implants for a period of 60 days. Commercial dental implants were immersed in bacterial (Streptococcus mutans in brain-heart infusion broth) and control (broth only) media. Immersion testing was performed for a period of 60 days. During testing, optical density and pH of immersion media were monitored. The implant surface was surveyed with different microscopy techniques post-immersion. Metal ion release in solution was detected with an electrochemical impedance spectroscopy sensor platform called metal ion electrochemical biosensor (MIEB). Bacteria grew in the implant-containing medium and provided a sustained acidic environment. Implants immersed in bacterial culture displayed various corrosion features, including surface discoloration, deformation of rough and smooth interfaces, pitting attack, and severe surface rusting. The surface features were confirmed by microscopic techniques, and metal particle generation was detected by the MIEB. Implant surface oxidation occurred in bacteria-containing medium even at early stages of immersion (2 days). The incremental corrosion resulted in dissolution of metal ions and debris into the testing solution. Dissolution of metal ions and particles in the oral environment can trigger or contribute to the development of peri-implantitis at later stages. © 2015 Wiley Periodicals, Inc.

Formation of a periodic diffractive structure based on poly(methyl methacrylate) with ion-implanted silver nanoparticles

NASA Astrophysics Data System (ADS)

Galyautdinov, M. F.; Nuzhdin, V. I.; Fattakhov, Ya. V.; Farrakhov, B. F.; Valeev, V. F.; Osin, Yu. N.; Stepanov, A. L.

2016-02-01

We propose to form optical diffractive elements on the surface of poly(methyl methacrylate) (PMMA) by implanting the polymer with silver ions ( E = 30 keV; D = 5.0 × 1014 to 1.5 × 1017 ion/cm2; I = 2 μA/cm2) through a nickel grid (mask). Ion implantation leads to the nucleation and growth of silver nanoparticles in unmasked regions of the polymer. The formation of periodic surface microstructures during local sputtering of the polymer by incident ions was monitored using an optical microscope. The diffraction efficiency of obtained gratings is demonstrated under conditions of their probing with semiconductor laser radiation in the visible spectral range.

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reichel, Christian, E-mail: christian.reichel@ise.fraunhofer.de; National Renewable Energy Laboratory; Feldmann, Frank

Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells.more » Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.« less

Retardation of surface corrosion of biodegradable magnesium-based materials by aluminum ion implantation

NASA Astrophysics Data System (ADS)

Wu, Guosong; Xu, Ruizhen; Feng, Kai; Wu, Shuilin; Wu, Zhengwei; Sun, Guangyong; Zheng, Gang; Li, Guangyao; Chu, Paul K.

2012-07-01

Aluminum ion implantation is employed to modify pure Mg as well as AZ31 and AZ91 magnesium alloys and their surface degradation behavior in simulated body fluids is studied. Polarization tests performed in conjunction with scanning electron microscopy (SEM) reveal that the surface corrosion resistance after Al ion implantation is improved appreciably. This enhancement can be attributed to the formation of a gradient surface structure with a gradual transition from an Al-rich oxide layer to Al-rich metal layer. Compared to the high Al-content magnesium alloy (AZ91), a larger reduction in the degradation rate is achieved from pure magnesium and AZ31. Our results reveal that the surface corrosion resistance of Mg alloys with no or low Al content can be improved by Al ion implantation.

Phase transformations in ion-irradiated silicides

NASA Technical Reports Server (NTRS)

Hewett, C. A.; Lau, S. S.; Suni, I.; Hung, L. S.

1985-01-01

The present investigation has three objectives. The first is concerned with the phase transformation of CoSi2 under ion implantation and the subsequent crystallization characteristics during annealing, taking into account epitaxial and nonepitaxial recrystallization behavior. The second objective is related to a study of the general trend of implantation-induced damage and crystallization behavior for a number of commonly used silicides. The last objective involves a comparison of the recrystallization behavior of cosputtered refractory silicides with that of the ion-implanted silicides. It was found that epitaxial regrowth of ion-irradiated CoSi2 occurred for samples with an epitaxial seed left at the Si/CoSi2 interface. A structural investigation of CoSi2 involving transmission electron microscopy (TEM) showed that after high-dose implantation CoSi2 is amorphous.

Nanoscale fabrication using single-ion impacts

NASA Astrophysics Data System (ADS)

Millar, Victoria; Pakes, Chris I.; Cimmino, Alberto; Brett, David; Jamieson, David N.; Prawer, Steven D.; Yang, Changyi; Rout, Bidhudutta; McKinnon, Rita P.; Dzurak, Andrew S.; Clark, Robert G.

2001-11-01

We describe a novel technique for the fabrication of nanoscale structures, based on the development of localized chemical modification caused in a PMMA resist by the implantation of single ions. The implantation of 2 MeV He ions through a thin layer of PMMA into an underlying silicon substrate causes latent damage in the resist. On development of the resist we demonstrate the formation within the PMMA layer of clearly defined etched holes, of typical diameter 30 nm, observed using an atomic force microscope employing a carbon nanotube SPM probe in intermittent-contact mode. This technique has significant potential applications. Used purely to register the passage of an ion, it may be a useful verification of the impact sites in an ion-beam modification process operating at the single-ion level. Furthermore, making use of the hole in the PMMA layer to perform subsequent fabrication steps, it may be applied to the fabrication of self-aligned structures in which surface features are fabricated directly above regions of an underlying substrate that are locally doped by the implanted ion. Our primary interest in single-ion resists relates to the development of a solid-state quantum computer based on an array of 31P atoms (which act as qubits) embedded with nanoscale precision in a silicon matrix. One proposal for the fabrication of such an array is by phosphorous-ion implantation. A single-ion resist would permit an accurate verification of 31P implantation sites. Subsequent metalisation of the latent damage may allow the fabrication of self-aligned metal gates above buried phosphorous atoms.

Influence of 400 keV carbon ion implantation on structural, optical and electrical properties of PMMA

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Rafique, M. Shahid; Saleemi, Farhat; Sagheer, Riffat; Naab, Fabian; Toader, Ovidiu; Mahmood, Arshad; Rashid, Rashad; Mahmood, Mazhar

2015-09-01

Ion implantation is a useful technique to modify surface properties of polymers without altering their bulk properties. The objective of this work is to explore the 400 keV C+ ion implantation effects on PMMA at different fluences ranging from 5 × 1013 to 5 × 1015 ions/cm2. The surface topographical examination of irradiated samples has been performed using Atomic Force Microscope (AFM). The structural and chemical modifications in implanted PMMA are examined by Raman and Fourier Infrared Spectroscopy (FTIR) respectively. The effects of carbon ion implantation on optical properties of PMMA are investigated by UV-Visible spectroscopy. The modifications in electrical conductivity have been measured using a four point probe technique. AFM images reveal a decrease in surface roughness of PMMA with an increase in ion fluence from 5 × 1014 to 5 × 1015 ions/cm2. The existence of amorphization and sp2-carbon clusterization has been confirmed by Raman and FTIR spectroscopic analysis. The UV-Visible data shows a prominent red shift in absorption edge as a function of ion fluence. This shift displays a continuous reduction in optical band gap (from 3.13 to 0.66 eV) due to formation of carbon clusters. Moreover, size of carbon clusters and photoconductivity are found to increase with increasing ion fluence. The ion-induced carbonaceous clusters are believed to be responsible for an increase in electrical conductivity of PMMA from (2.14 ± 0.06) × 10-10 (Ω-cm)-1 (pristine) to (0.32 ± 0.01) × 10-5 (Ω-cm)-1 (irradiated sample).

Optical properties of ion-beam-synthesized Au nanoparticles in SiO2 matrix

NASA Astrophysics Data System (ADS)

Hsieh, Chang-Lin; Oyoshi, Keiji; Chao, Der-Sheng; Tsai, Hsu-Sheng; Hong, Wei-Lun; Takeda, Yoshihiko; Liang, Jenq-Horng

2016-05-01

In recent years, gold (Au) nanoparticles have been synthesized via various methods and used in optical and biomedical detection. Au nanoparticles contain some remarkable dimension-dependent optical properties due to surface plasmon resonance (SPR) in Au nanoparticles which causes high absorption in visible light regions. Since SPR in well-crystallized Au nanoparticles can enhance the local electromagnetic field, it is thus expected that greater efficiency in the photoluminescence (PL) originating from oxygen deficiency centers (ODC) can be achieved in Au-implanted SiO2 matrix. In order to demonstrate the enhancement of PL, Au nanoparticles were formed in SiO2 film using ion beam synthesis and their optical and microstructural properties were also investigated in this study. The results revealed that a clear absorption peak at approximately 530 nm was identified in the UV-Vis spectra and was attributed to SPR induced by Au nanoparticles in SiO2. The SPR of Au nanoparticles is also dependent on thermal treatment conditions, such as post-annealing temperature and ambient. The Au nanoparticle-containing SiO2 film also displayed several distinctive peaks at approximately 320, 360, 460, and 600 nm in the PL spectra and were found to be associated with ODC-related defects and non-bridging oxygen hole centers (NBOHC) in SiO2. In addition, the PL peak intensities increased as post-annealing temperature increased, a finding contradictory to the defect recovery but highly consistent with the SPR tendency. A maximum PL emission was achieved when the Au-implanted SiO2 film was annealed at 1100 °C for 1 h under N2. Therefore, the existence of Au nanoparticles in SiO2 film can induce SPR effects as well as enhance PL emission resulting from defect-related luminescence centers.

Effects of H-implantation on the optical stability under photo-irradiation of urushi films

NASA Astrophysics Data System (ADS)

Awazu, Kaoru; Nishimura, Yoshinori; Ichikawa, Tachio; Sakamoto, Makoto; Watanabe, Hiroshi; Iwaki, Masaya

1993-06-01

A study has been made of the effects of H-implantation on the optical stability under photo-irradiation of urushi films. Urushi films of 43 μm in thickness were lacquered on glass plates. Implantation of H +, H 2+, C +, N + and O + ions were performed with an energy of 150 keV and doses of 1 × 10 14 and 1 × 10 15 ions/cm 2 at room temperature. The beam current density used was approximately 1 μA/cm 2 to prevent specimens from heating. The photo-irradiation onto the surfaces of urushi films was carried out to radiative exposure of 190 MJ/m 2, using a Suga sunshine weather meter. The gloss, transmittance and haze of implanted and photo-irradiated urushi films have been investigated in conjunction with chemical bonding states of carbon at the urushi surfaces. Ion implantation induces the surface carbonization of urushi films to inhibit the change in gloss and haze by photo-irradiation. It is concluded that ion implantation is useful for improving the optical stability under photo-irradiation of urushi films.

High definition surface micromachining of LiNbO 3 by ion implantation

NASA Astrophysics Data System (ADS)

Chiarini, M.; Bentini, G. G.; Bianconi, M.; De Nicola, P.

2010-10-01

High Energy Ion Implantation (HEII) of both medium and light mass ions has been successfully applied for the surface micromachining of single crystal LiNbO 3 (LN) substrates. It has been demonstrated that the ion implantation process generates high differential etch rates in the LN implanted areas, when suitable implantation parameters, such as ion species, fluence and energy, are chosen. In particular, when traditional LN etching solutions are applied to suitably ion implanted regions, etch rates values up to three orders of magnitude higher than the typical etching rates of the virgin material, are registered. Further, the enhancement in the etching rate has been observed on x, y and z-cut single crystalline material, and, due to the physical nature of the implantation process, it is expected that it can be equivalently applied also to substrates with different crystallographic orientations. This technique, associated with standard photolithographic technologies, allows to generate in a fast and accurate way very high aspect ratio relief micrometric structures on LN single crystal surface. In this work a description of the developed technology is reported together with some examples of produced micromachined structures: in particular very precisely defined self sustaining suspended structures, such as beams and membranes, generated on LN substrates, are presented. The developed technology opens the way to actual three dimensional micromachining of LN single crystals substrates and, due to the peculiar properties characterising this material, (pyroelectric, electro-optic, acousto-optic, etc.), it allows the design and the production of complex integrated elements, characterised by micrometric features and suitable for the generation of advanced Micro Electro Optical Systems (MEOS).

Production yield of rare-earth ions implanted into an optical crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kornher, Thomas, E-mail: t.kornher@physik.uni-stuttgart.de; Xia, Kangwei; Kolesov, Roman

2016-02-01

Rare-earth (RE) ions doped into desired locations of optical crystals might enable a range of novel integrated photonic devices for quantum applications. With this aim, we have investigated the production yield of cerium and praseodymium by means of ion implantation. As a measure, the collected fluorescence intensity from both implanted samples and single centers was used. With a tailored annealing procedure for cerium, a yield up to 53% was estimated. Praseodymium yield amounts up to 91%. Such high implantation yield indicates a feasibility of creation of nanopatterned rare-earth doping and suggests strong potential of RE species for on-chip photonic devices.

Positron and nanoindentation study of helium implanted high chromium ODS steels

NASA Astrophysics Data System (ADS)

Veternikova, Jana Simeg; Fides, Martin; Degmova, Jarmila; Sojak, Stanislav; Petriska, Martin; Slugen, Vladimir

2017-12-01

Three oxide dispersion strengthened (ODS) steels with different chromium content (MA 956, MA 957 and ODM 751) were studied as candidate materials for new nuclear reactors in term of their radiation stability. The radiation damage was experimentally simulated by helium ion implantation with energy of ions up to 500 keV. The study was focused on surface and sub-surface structural change due to the ion implantation observed by mostly non-destructive techniques: positron annihilation lifetime spectroscopy and nanoindentation. The applied techniques demonstrated the best radiation stability of the steel ODM 751. Blistering effect occurred due to high implantation dose (mostly in MA 956) was studied in details.

Improved corrosion resistance on biodegradable magnesium by zinc and aluminum ion implantation

NASA Astrophysics Data System (ADS)

Xu, Ruizhen; Yang, Xiongbo; Suen, Kai Wong; Wu, Guosong; Li, Penghui; Chu, Paul K.

2012-12-01

Magnesium and its alloys have promising applications as biodegradable materials, and plasma ion implantation can enhance the corrosion resistance by modifying the surface composition. In this study, suitable amounts of zinc and aluminum are plasma-implanted into pure magnesium. The surface composition, phases, and chemical states are determined, and electrochemical tests and electrochemical impedance spectroscopy (EIS) are conducted to investigate the surface corrosion behavior and elucidate the mechanism. The corrosion resistance enhancement after ion implantation is believed to stem from the more compact oxide film composed of magnesium oxide and aluminum oxide as well as the appearance of the β-Mg17Al12 phase.

Aluminum surface modification by a non-mass-analyzed nitrogen ion beam

NASA Astrophysics Data System (ADS)

Ohira, Shigeo; Iwaki, Masaya

Non-mass-analyzed nitrogen ion implantation into polycrystal and single crystal aluminum sheets has been carried out at an accelerating voltage of 90 kV and a dose of 1 × 10 18 N ions/cm 2 using a Zymet implanter model Z-100. The pressure during implantation rose to 10 -3 Pa due to the influence of N gas feeding into the ion source. The characteristics of the surface layers were investigated by means of Auger electron spectroscopy (AES), X-ray diffraction (XRD), transmission electron diffraction (TED), and microscopy (TEM). The AES depth profiling shows a rectangular-like distribution of N atoms and little migration of O atoms near the surface. The high dose N-implantation forms c-axis oriented aluminum nitride (AIN) crystallines, and especially irradiation of Al single crystals with N ions leads to the formation of a hcp AlN single crystal. It is concluded that the high dose N-implantation in Al can result in the formation of AlN at room temperature without any thermal annealing. Furthermore, non-mass-analyzed N-implantation at a pressure of 10 -3 Pa of the nitrogen atmosphere causes the formation of pure AlN single crystals in the Al surface layer and consequently it can be practically used for AlN production.

Chemical characterization of 4140 steel implanted by nitrogen ions

NASA Astrophysics Data System (ADS)

Niño, E. D. V.; Pinto, J. L.; Dugar-Zhabon, V.; Henao, J. A.

2012-06-01

AISI SAE 4140 steel samples of different surface roughness which are implanted with 20 keV and 30 keV nitrogen ions at a dose of 1017 ions/cm2 are studied. The crystal phases of nitrogen compositions of the implanted samples, obtained with help of an x-ray diffraction method, are confronted with the data reported by the International Centre for Diffraction Data (ICDD) PDF-2. The implantation treatment is realized in high-voltage pulsed discharges at low pressures. The crystal structure of the implanted solid surfaces is analyzed by the x-ray diffraction technique which permits to identify the possible newly formed compounds and to identify any change in the surface structure of the treated samples. A decrease in the intensity of the plane (110), a reduction of the cell unity in values of 2-theta and a diminishing of the crystallite dimensions in comparison with non-implanted samples are observed.

Reactions of atomic oxygen with the chlorate ion and the perchlorate ion

NASA Astrophysics Data System (ADS)

Anan'ev, Vladimir; Miklin, Mikhail; Kriger, Ludmila

2014-06-01

The reactions of the chlorate ion with atomic oxygen formed under photolysis of the nitrate ion introduced to potassium chlorate crystal by co-crystallization were studied by optical and infrared absorption spectroscopy. The perchlorate ion was found to form in solids as product of addition reaction of singlet atomic oxygen, formed under dissociation of the peroxynitrite ion - the product of isomerization of the excited nitrate ion. Triplet atomic oxygen does not react with the chlorate ion. The atomic oxygen formed under photolysis of the nitrate ion introduced to potassium perchlorate crystal by co-crystallization does not react with the perchlorate ion.

Metal is not inert: role of metal ions released by biocorrosion in aseptic loosening--current concepts.

PubMed

Cadosch, Dieter; Chan, Erwin; Gautschi, Oliver P; Filgueira, Luis

2009-12-15

Metal implants are essential therapeutic tools for the treatment of bone fractures and joint replacements. The metals and metal alloys used in contemporary orthopedic and trauma surgery are well tolerated by the majority of patients. However, complications resulting from inflammatory and immune reactions to metal implants have been well documented. This review briefly discusses the different mechanisms of metal implant corrosion in the human body, which lead to the release of significant levels of metal ions into the peri-implant tissues and the systemic blood circulation. Additionally, this article reviews the effects of the released ions on bone metabolism and the immune system and discusses their involvement in the pathophysiological mechanisms of aseptic loosening and metal hypersensitivity in patients with metal implants.

The formation of magnetic silicide Fe3Si clusters during ion implantation

NASA Astrophysics Data System (ADS)

Balakirev, N.; Zhikharev, V.; Gumarov, G.

2014-05-01

A simple two-dimensional model of the formation of magnetic silicide Fe3Si clusters during high-dose Fe ion implantation into silicon has been proposed and the cluster growth process has been computer simulated. The model takes into account the interaction between the cluster magnetization and magnetic moments of Fe atoms random walking in the implanted layer. If the clusters are formed in the presence of the external magnetic field parallel to the implanted layer, the model predicts the elongation of the growing cluster in the field direction. It has been proposed that the cluster elongation results in the uniaxial magnetic anisotropy in the plane of the implanted layer, which is observed in iron silicide films ion-beam synthesized in the external magnetic field.

Pre-clinical evaluation of OxyChip for long-term EPR oximetry.

PubMed

Hou, Huagang; Khan, Nadeem; Gohain, Sangeeta; Kuppusamy, M Lakshmi; Kuppusamy, Periannan

2018-03-16

Tissue oxygenation is a critical parameter in various pathophysiological situations including cardiovascular disease and cancer. Hypoxia can significantly influence the prognosis of solid malignancies and the efficacy of their treatment by radiation or chemotherapy. Electron paramagnetic resonance (EPR) oximetry is a reliable method for repeatedly assessing and monitoring oxygen levels in tissues. Lithium octa-n-butoxynaphthalocyanine (LiNc-BuO) has been developed as a probe for biological EPR oximetry, especially for clinical use. However, clinical applicability of LiNc-BuO crystals is hampered by potential limitations associated with biocompatibility, biodegradation, or migration of individual bare crystals in tissue. To overcome these limitations, we have embedded LiNc-BuO crystals in polydimethylsiloxane (PDMS), an oxygen-permeable biocompatible polymer and developed an implantable/retrievable form of chip, called OxyChip. The chip was optimized for maximum spin density (40% w/w of LiNc-BuO in PDMS) and fabricated in a form suitable for implantation using an 18-G syringe needle. In vitro evaluation of the OxyChip showed that it is robust and highly oxygen sensitive. The dependence of its EPR linewidth to oxygen was linear and highly reproducible. In vivo efficacy of the OxyChip was evaluated by implanting it in rat femoris muscle and following its response to tissue oxygenation for up to 12 months. The results revealed preservation of the integrity (size and shape) and calibration (oxygen sensitivity) of the OxyChip throughout the implantation period. Further, no inflammatory or adverse reaction around the implantation area was observed thereby establishing its biocompatibility and safety. Overall, the results demonstrated that the newly-fabricated high-sensitive OxyChip is capable of providing long-term measurements of oxygen concentration in a reliable and repeated manner under clinical conditions.

Deuterium permeation behaviors in tungsten implanted with nitrogen

NASA Astrophysics Data System (ADS)

Liang, Chuan-hui; Wang, Dongping; Jin, Wei; Lou, Yuanfu; Wang, Wei; Ye, Xiaoqiu; Chen, Chang-an; Liu, Kezhao; Xu, Haiyan; Wang, Xiaoying; Kleyn, Aart W.

2018-07-01

Surface modification of tungsten due to the cooling species nitrogen seeded in the divertor region, i.e., by nitrogen ion implantation or re-deposition, is considered to affect the permeation behavior of H isotopes. This work focuses on the effect of nitrogen ion implantation into tungsten (W-N) on the deuterium gas-driven permeation behavior. For comparison, both permeation in tungsten implanted with W ion (W-W) and without implantation (pristine W) are studied. These three samples were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photo-electron spectroscopy (XPS). The SEM results revealed that the W-W sample has various voids on the surface, and the W-N sample has a rough surface with pretty fine microstructures. These are different from the pristine W sample with a smooth and compact surface. The XRD patterns show the disappearance of crystallinity on both W-W and W-N sample surfaces. It indicates that the ion implantation process results in an almost complete conversion from crystalline to amorphous in the sample surfaces. The sputter-depth profiling XPS spectra show that the implanted nitrogen prefers to form a 140 nm thick tungsten nitride layer. In permeation experiments, it was found that the D permeability is temperature dependent. Interestingly, the W-N sample presented a lower D permeability than the W-W sample, but higher than the pristine W sample. Such behavior implies that tungsten nitride acts as a permeation barrier, while defects created by ions implantation can promote permeability. The possible permeation mechanism correlated with sample surface composition and microstructure is consequently discussed in this work.

Lattice disorder produced in GaN by He-ion implantation

NASA Astrophysics Data System (ADS)

Han, Yi; Peng, Jinxin; Li, Bingsheng; Wang, Zhiguang; Wei, Kongfang; Shen, Tielong; Sun, Jianrong; Zhang, Limin; Yao, Cunfeng; Gao, Ning; Gao, Xing; Pang, Lilong; Zhu, Yabin; Chang, Hailong; Cui, Minghuan; Luo, Peng; Sheng, Yanbin; Zhang, Hongpeng; Zhang, Li; Fang, Xuesong; Zhao, Sixiang; Jin, Jin; Huang, Yuxuan; Liu, Chao; Tai, Pengfei; Wang, Dong; He, Wenhao

2017-09-01

The lattice disorders induced by He-ion implantation in GaN epitaxial films to fluences of 2 × 1016, 5 × 1016 and 1 × 1017 cm-2 at room temperature (RT) have been investigated by a combination of Raman spectroscopy, high-resolution X-ray diffraction (HRXRD), nano-indentation, and transmission electron microscopy (TEM). The experimental results present that Raman intensity decreases with increasing fluence. Raman frequency "red shift" occurs after He-ion implantation. Strain increases with increasing fluence. The hardness of the highly damaged layer increases monotonically with increasing fluence. Microstructural results demonstrate that the width of the damage band and the number density of observed dislocation loops increases with increasing fluence. High-resolution TEM images exhibit that He-ion implantation lead to the formation of planar defects and most of the lattice defects are of interstitial-type basal loops. The relationships of Raman intensity, lattice strain, swelling and hardness with He-implantation-induced lattice disorders are discussed.

Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

DOEpatents

Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

1988-06-16

An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

DOEpatents

Ashby, Carol I. H.; Myers, David R.; Vook, Frederick L.

1989-01-01

An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au; Bowers, H.; Ganesan, K.

2016-06-14

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to mapmore » out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.« less

Depth profiling of high energy nitrogen ions implanted in the <1 0 0>, <1 1 0> and randomly oriented silicon crystals

NASA Astrophysics Data System (ADS)

Erić, M.; Petrović, S.; Kokkoris, M.; Lagoyannis, A.; Paneta, V.; Harissopulos, S.; Telečki, I.

2012-03-01

This work reports on the experimentally obtained depth profiles of 4 MeV 14N2+ ions implanted in the <1 0 0>, <1 1 0> and randomly oriented silicon crystals. The ion fluence was 1017 particles/cm2. The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of 14N(d,α0)12C and 14N(d,α1)12C nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen "bubble" formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation.

Dopant profile modeling by rare event enhanced domain-following molecular dynamics

DOEpatents

Beardmore, Keith M.; Jensen, Niels G.

2002-01-01

A computer-implemented molecular dynamics-based process simulates a distribution of ions implanted in a semiconductor substrate. The properties of the semiconductor substrate and ion dose to be simulated are first initialized, including an initial set of splitting depths that contain an equal number of virtual ions implanted in each substrate volume determined by the splitting depths. A first ion with selected velocity is input onto an impact position of the substrate that defines a first domain for the first ion during a first timestep, where the first domain includes only those atoms of the substrate that exert a force on the ion. A first position and velocity of the first ion is determined after the first timestep and a second domain of the first ion is formed at the first position. The first ion is split into first and second virtual ions if the first ion has passed through a splitting interval. The process then follows each virtual ion until all of the virtual ions have come to rest. A new ion is input to the surface and the process repeats until all of the ion dose has been input. The resulting ion rest positions form the simulated implant distribution.

Intrinsic point-defect balance in self-ion-implanted ZnO.

PubMed

Neuvonen, Pekka T; Vines, Lasse; Svensson, Bengt G; Kuznetsov, Andrej Yu

2013-01-04

The role of excess intrinsic atoms for residual point defect balance has been discriminated by implanting Zn or O ions into Li-containing ZnO and monitoring Li redistribution and electrical resistivity after postimplant anneals. Strongly Li-depleted regions were detected in the Zn-implanted samples at depths beyond the projected range (R(p)) upon annealing ≥ 600 °C, correlating with a resistivity decrease. In contrast, similar anneals of the O-implanted samples resulted in Li accumulation at R(p) and an increased resistivity. Control samples implanted with Ar or Ne ions, yielding similar defect production as for the Zn or O implants but with no surplus of intrinsic atoms, revealed no Li depletion. Thus, the depletion of Li shows evidence of excess Zn interstitials (Zn(I)) being released during annealing of the Zn-implanted samples. These Zn(I)'s convert substitutional Li atoms (Li(Zn)) into highly mobile interstitial ones leading to the strongly Li-depleted regions. In the O-implanted samples, the high resistivity provides evidence of stable O(I)-related acceptors.

Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity

NASA Astrophysics Data System (ADS)

Mizuno, Tomohisa; Omata, Yuhsuke; Kanazawa, Rikito; Iguchi, Yusuke; Nakada, Shinji; Aoki, Takashi; Sasaki, Tomokazu

2018-04-01

We experimentally studied the optimization of the hot-C+-ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-on-insulator substrate at various hot-C+-ion implantation temperatures and C+ ion doses to improve photoluminescence (PL) intensity for future Si-based photonic devices. We successfully optimized the process by hot-C+-ion implantation at a temperature of about 700 °C and a C+ ion dose of approximately 4 × 1016 cm-2 to realize a high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas.

Tribological characteristics of nitrogen (N+) implanted iron

NASA Technical Reports Server (NTRS)

Jones, W. R.; Ferrante, J.

1982-01-01

The effect of implantation of nitrogen ions (1.5 MeV) on the friction and wear characteristics of pure ion sliding against M-50 steel (unimplanted) was studied in a pin-on-disk sliding friction apparatus. Test conditions included room temperature (25 C), a dry air atmosphere, a load of 1/2 kg (4.9 N), sliding velocities of 0.043 to 0.078 m/sec (15 to 25 rpm), a pure hydrocarbon lubricant (n-hexadecane), or a U.S.P. mineral oil and nitrogen ion implantation doses of 5x10 to the 15th power and 5x10 to the 17th power ions/sq cm. No differences in wear rates were observed in the low dose experiments. In the high dose experiments, small reductions in initial (40 percent) and steady state (20 percent) wear rates were observed for nitrogen implanted iron riders as compared with unimplanted controls. No differences in average friction coefficients were noted for either dose. Auger electron spectroscopy combined with argon ion bombardment revealed a subsurface Gaussian nitrogen distribution with a maximum concentration of 6 atomic percent at a depth of 0.8 microns. Similar analysis within the wear scar of an implanted rider after 20 microns of wear yielded only background nitrogen concentration. No inward migration of nitrogen ions was observed.

Hydrogen ion-driven permeation in carbonaceous films

NASA Astrophysics Data System (ADS)

Anderl, R. A.; Holland, D. F.; Longhurst, G. R.

1989-04-01

This paper presents the results of investigations into the permeation properties of amorphous carbonaceous, a-C: H, films produced by plasmachemical deposition techniques. Carbonaceous films on iron substrates with thickness ranging from 60 nm to 110 nm were subjected to high fluence implantations with mass analyzed D +3 ions with energies ranging from 600 eV to 3000 eV and fluxes ranging from 5 × 10 14D/ cm2 s to 5 × 10 15D/ cm2 s, respectively. Deuterium re-emission upstream, deuterium permeation downstream and secondary ions sputtered from the implantation surface were measured as a function of implantation fluence for specimens at 420 K. The present studies indicate that the a-C : H film permeability is directly related to the time, hence the fluence, required to achieve isotopic replacement and saturation of the deuterium ion beam atoms stopped in the implant region. Once the deuterium saturation level is achieved in the layer, a significant fraction of the implanting ions can result in permeation. For the present experiment, this permeation factor was much higher than that for uncoated iron specimens subjected to similar beam conditions. Carbon sputter yields of 0.008-0.01 C/D were determined in this work for 1000-eV to 400-eV deuterium ions incident on a-C : H films.

Effect of Ar Ion Beam Implantation on Morphological and Physiological Characteristics of Liquorice (Glycyrrhiza uralensis Fisch) Under Short-Term Artificial Drought Conditions

NASA Astrophysics Data System (ADS)

Zhang, Xiangsheng; Wu, Lijun; Yu, Lixiang; Wei, Shenglin; Liu, Jingnan; Yu, Zengliang

2007-04-01

Ar+ ion beam with low energy of 30 keV was implanted into liquorice (Glycyrrhiza uralensis Fisch) seeds at the doses of 0, 600, 900 and 1200 × (2.6 × 1013) ions/cm2, respectively. The seeds were sowed in pots and after one month the plants were subjected to different drought conditions for two months. Then the plants' morphological and physiological characteristics, anti-oxidation enzymes and levels of endogenous hormones were investigated. The results showed that ion implantation at a proper dose can greatly enhance the liquorice seedlings' resistance against drought stress.

Multifunctions of dual Zn/Mg ion co-implanted titanium on osteogenesis, angiogenesis and bacteria inhibition for dental implants.

PubMed

Yu, Yiqiang; Jin, Guodong; Xue, Yang; Wang, Donghui; Liu, Xuanyong; Sun, Jiao

2017-02-01

In order to improve the osseointegration and long-term survival of dental implants, it is urgent to develop a multifunctional titanium surface which would simultaneously have osteogeneic, angiogeneic and antibacterial properties. In this study, a potential dental implant material-dual Zn/Mg ion co-implanted titanium (Zn/Mg-PIII) was developed via plasma immersion ion implantation (PIII). The Zn/Mg-PIII surfaces were found to promote initial adhesion and spreading of rat bone marrow mesenchymal stem cells (rBMSCs) via the upregulation of the gene expression of integrin α1 and integrin β1. More importantly, it was revealed that Zn/Mg-PIII could increase Zn 2+ and Mg 2+ concentrations in rBMSCs by promoting the influx of Zn 2+ and Mg 2+ and inhibiting the outflow of Zn 2+ , and then could enhance the transcription of Runx2 and the expression of ALP and OCN. Meanwhile, Mg 2+ ions from Zn/Mg-PIII increased Mg 2+ influx by upregulating the expression of MagT1 transporter in human umbilical vein endothelial cells (HUVECs), and then stimulated the transcription of VEGF and KDR via activation of hypoxia inducing factor (HIF)-1α, thus inducing angiogenesis. In addition to this, it was discovered that zinc in Zn/Mg-PIII had certain inhibitory effects on oral anaerobic bacteria (Pg, Fn and Sm). Finally, the Zn/Mg-PIII implants were implanted in rabbit femurs for 4 and 12weeks with Zn-PIII, Mg-PIII and pure titanium as controls. Micro-CT evaluation, sequential fluorescent labeling, histological analysis and push-out test consistently demonstrated that Zn/Mg-PIII implants exhibit superior capacities for enhancing bone formation, angiogenesis and osseointegration, while consequently increasing the bonding strength at bone-implant interfaces. All these results suggest that due to the multiple functions co-produced by zinc and magnesium, rapid osseointegration and sustained biomechanical stability are enhanced by the novel Zn/Mg-PIII implants, which have the potential application in dental implantation in the future. In order to enhance the rapid osseointegration and long-term survival of dental implants, various works on titanium surface modification have been carried out. However, only improving osteogenic activity of implants is not enough, because angiogenesis and bacteria inhibition are also very important for dental implants. In the present study, a novel dental implant material-dual Zn/Mg ion co-implanted titanium (Zn/Mg-PIII) was developed, which was found to have superior osteoinductivity, pro-angiogenic effects and inhibitory effects against oral anaerobes. Furthermore, synergistic effects of Zn/Mg ions on osteogenic differentiation of rBMSCs and the possible mechanism were discovered. In addition, rapid osseointegration and sustained biomechanical stability are greatly enhanced by Zn/Mg-PIII implants, which may have the potential application in dental implantation in the future. We believe this paper may be of particular interest to the readers. Copyright © 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Vacancy-induced ferromagnetism in ZnO probed by spin-polarized positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Maekawa, Masaki; Abe, Hiroshi; Miyashita, Atsumi; Sakai, Seiji; Yamamoto, Shunya; Kawasuso, Atsuo

2017-04-01

We investigated the ferromagnetism of ZnO induced by oxygen implantation by using spin-polarized positron annihilation spectroscopy together with magnetization measurements. The magnetization measurements showed the appearance of ferromagnetism after oxygen implantation and its disappearance during post-implantation annealing at temperatures above 573 K. The Doppler broadening of annihilation radiation (DBAR) spectrum showed asymmetry upon field reversal after oxygen implantation. The obtained differential DBAR spectrum between positive and negative magnetic fields was well-explained with a theoretical calculation considering zinc vacancies. The disappearance of the field-reversal asymmetry of the DBAR spectrum as a result of annealing agreed with the observations of ferromagnetism by magnetization measurements. These results suggest the radiation-induced zinc vacancies to be the source of the observed ferromagnetism of ZnO.

Spectral distribution of UV range diffuse reflectivity for Si+ ion implanted polymers

NASA Astrophysics Data System (ADS)

Balabanov, S.; Tsvetkova, T.; Borisova, E.; Avramov, L.; Bischoff, L.

2008-05-01

The analysis of the UV range spectral characteristics can supply additional information on the formed sub-surface buried layer with implanted dopants. The near-surface layer (50÷150 nm) of bulk polymer samples have been implanted with silicon (Si+) ions at low energies (E = 30 keV) and a wide range of ion doses (D = 1.1013 ÷ 1, 2.1017 cm-2). The studied polymer materials were: ultra-high-molecular-weight polyethylene (UHMWPE), poly-methyl-metacrylate (PMMA) and poly-tetra-fluor-ethylene (PTFE). The diffuse optical reflectivity spectra Rd = f(λ) of the ion implanted samples have been measured in the UV range (λ = 220÷350 nm). In this paper the dose dependences of the size and sign of the diffuse optical reflectivity changes λRd = f(D) have been analysed.

Electrical and optical properties of nitrile rubber modified by ion implantation

NASA Astrophysics Data System (ADS)

S, Najidha; Predeep, P.

2014-10-01

Implantation of N+ ion beams are performed on to a non-conjugated elastomer, acrylonirtle butadiene rubber (NBR) with energy 60 keV in the fluence range of 1014 to 1016 ions/cm2. A decrease in the resistivity of the sample by about eight orders of magnitude is observed in the implanted samples along with color changes. The ion exposed specimens were characterized by means of UV/Vis spectroscopy which shows a shift in the absorption edge value for the as deposited polymer towards higher wavelengths. The band gap is evaluated from the absorption spectra and is found to decrease with increasing fluence. This study can possibly throw light on ion induced changes in the polymer surface.

Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes

DOE PAGES

Liu, Wei; Zhang, Shukui; Stutzman, Marcy; ...

2016-10-24

Bulk GaAs samples with different surface cleave planes were implanted with 100 and 10 000 V hydrogen ions inside an ultrahigh vacuum test apparatus to simulate ion back-bombardment of the photocathode inside a DC high voltage photogun. The photocathode yield, or quantum efficiency, could easily be recovered following implantation with 100 V hydrogen ions but not for 10 000 V ions. Moreover, the implantation damage with 10 000 V hydrogen ions was more pronounced for GaAs photocathode samples with (100) and (111A) cleave planes, compared to the photocathode with (110) cleave plane. Lastly, this result is consistent with enhanced ionmore » channeling for the (110) cleave plane compared to the other cleave planes, with ions penetrating deeper into the photocathode material beyond the absorption depth of the laser light and beyond the region of the photocathode where the photoemitted electrons originate.« less

Identification of vacancy-oxygen complexes in oxygen-implanted silicon probed with slow positrons

NASA Astrophysics Data System (ADS)

Fujinami, M.; Miyagoe, T.; Sawada, T.; Suzuki, R.; Ohdaira, T.; Akahane, T.

2004-04-01

Defects and their annealing behavior for low (2×1015/cm2) and high (1.7×1018/cm2) doses of 180 keV oxygen-implanted silicon have been investigated by the coincidence Doppler broadening (CDB) and lifetime measurements in variable-energy positron annihilation spectroscopy. In the low-dose sample, divacancies are induced throughout the entire implantation region. In the vacancy-oxygen coexisting region (300-500 nm depths), by raising the annealing temperature to 600 °C, vacancy-oxygen VxOy complexes with one vacant site are formed and, simultaneously, the migration of oxygen begins to takes place. In the vacancy-rich region (-200 nm depths), the evolution of simple vacancy clusters to V4 is mainly observed below 600 °C. From CDB and lifetime measurements, it has been proven that after annealing at 800 °C, the VxOy complexes are formed throughout the implanted region and they contain four vacant sites and a high ratio of y to x. On the other hand, high-dose implantation at 550 °C produces the VxOy complexes with a lifetime of a 430 ps in the near-surface region (less than 200 nm deep) and annealing at 1100 °C leads to the highest ratio of y to x. These complexes cannot be annealed out even by annealing at 1350 °C, and their structure is found to be very similar to that for the electron-irradiated amorphous SiO2.

Optical properties of Si+ implanted PMMA

NASA Astrophysics Data System (ADS)

Balabanov, S.; Tsvetkova, T.; Borisova, E.; Avramov, L.; Bischoff, L.; Zuk, J.

2010-04-01

In the present work, low energy ion beam irradiation was used for surface modification of polymethyl-methacrylate (PMMA) using silicon (Si+) as the ion species. After high doses ion implantation of Si+ in the polymer material, a characterization of the optical properties was performed using optical transmission measurements in the visible and near infra-red (IR) wavelength range. The optical absorption increase observed with the ion dose was attributed to ion beam induced structural changes in the modified material.

Electrical properties and dielectric spectroscopy of Ar{sup +} implanted polycarbonate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chawla, Mahak, E-mail: mahak.chawla@gmail.com; Shekhawat, Nidhi; Aggarwal, Sanjeev

2015-05-15

The aim of the present paper is to study the effect of argon ion implantation on electrical and dielectric properties of polycarbonate. Specimens were implanted with 130 keV Ar{sup +} ions in the fluence ranging from 1×10{sup 14} to 1×10{sup 16} ions cm{sup −2}. The beam current used was ∼0.40 µA cm{sup −2}. The electrical conduction behaviour of virgin and Ar{sup +} implanted polycarbonate specimens have been studied through current-voltage (I-V characteristic) measurements. It has been observed that after implantation conductivity increases with increasing ion fluence. The dielectric spectroscopy of these specimens has been done in the frequency range of 100 kHz-100 MHz.more » Relaxation processes were studied by Cole-Cole plot of complex permittivity (real part of complex permittivity, ε′ vs. imaginary part of complex permittivity, ε″). The Cole-Cole plots have also been used to determine static dielectric constant (ε{sub s}), optical dielectric constant (ε{sub ∞}), spreading factor (α), average relaxation time (τ{sub 0}) and molecular relaxation time (τ). The dielectric behaviour has been found to be significantly affected due to Ar{sup +} implantation. The possible correlation between this behaviour and the changes induced by the implantation has been discussed.« less

A feasibility study of ion implantation techniques for mass spectrometer calibration

NASA Technical Reports Server (NTRS)

Koslin, M. E.; Krycuk, G. A.; Schatz, J. G., Jr.; White, F. A.; Wood, G. M.

1978-01-01

An experimental study was undertaken to examine the feasibility of using ion-implanted filaments doped with either an alkali metal or noble gas for in situ recalibration of onboard mass spectrometers during extended space missions. Implants of rubidium and krypton in rhenium ribbon filaments were subsequently tested in a bakeable 60 deg sector mass spectrometer operating in the static mode. Surface ionization and electron impact ion sources were both used, each yielding satisfactory results. The metallic implant with subsequent ionization provided a means of mass scale calibration and determination of system operating parameters, whereas the noble gas thermally desorbed into the system was more suited for partial pressure and sensitivity determinations.

Ion beam modification of the structure and properties of hexagonal boron nitride: An infrared and X-ray diffraction study

NASA Astrophysics Data System (ADS)

Aradi, E.; Naidoo, S. R.; Billing, D. G.; Wamwangi, D.; Motochi, I.; Derry, T. E.

2014-07-01

The vibrational mode for the cubic symmetry of boron nitride (BN) has been produced by boron ion implantation of hexagonal boron nitride (h-BN). The optimum fluence at 150 keV was found to be 5 × 1014 ions/cm2. The presence of the c-BN phase was inferred using glancing incidence XRD (GIXRD) and Fourier Transform Infrared Spectroscopy (FTIR). After implantation, Fourier Transform Infrared Spectroscopy indicated a peak at 1092 cm-1 which corresponds to the vibrational mode for nanocrystalline BN (nc-BN). The glancing angle XRD pattern after implantation exhibited c-BN diffraction peaks relative to the implantation depth of 0.4 μm.

Effect of different sterilization modes on the surface morphology, ion release, and bone reaction of retrieved micro-implants.

PubMed

El-Wassefy, Noha; El-Fallal, Abeer; Taha, Mahasen

2015-01-01

To compare as-received and sterilized micro-implants in order to assess the prospects of reusing them. Forty micro-implants from a single manufacturing lot were used in the study. Thirty were retrieved from patients after successful service in their mouth and with no signs of failure. The retrieved micro-implants were divided into three groups, according to method of sterilization: autoclave, gamma radiation, or ultraviolet radiation. All groups were subjected to scanning electron microscope analysis for surface morphology assessment. The specimens were immersed in a standard simulated body-fluid solution kept at 37°C in an incubator; the solution was then withdrawn at 24 hours and 30 days to evaluate aluminum and vanadium ion release by atomic absorption spectrophotometer in parts per billion. The micro-implants were then surgically implanted into the tibia of rabbits for a 1-month healing period, and the bone-implant blocks were processed for routine histologic examination. This study revealed that sterilized micro-implants had altered surface topography, different ion release values, and different histologic cell reactions than the as-received micro-implants. Within the limitations of this study, it can be concluded that retrieved self-drilling micro-implants have tip sharpness variations that require correction before insertion by bone drilling. The autoclave-sterilized micro-implants showed better histologic results than micro-implants sterilized by gamma or ultraviolet rays.

The formation and optical properties of planar waveguide in laser crystal Nd:YGG by carbon ion implantation

NASA Astrophysics Data System (ADS)

Zhao, Jin-Hua; Qin, Xi-Feng; Wang, Feng-Xiang; Jiao, Yang; Guan, Jing; Fu, Gang

2017-10-01

As one kind of prominent laser crystal, Nd:Y3Ga5O12 (Nd:YGG) crystal has outstanding performance on laser excitation at multi-wavelength which have shown promising applications in optical communication field. In addition, Nd:YGG crystal has potential applications in medical field due to its ability of emit the laser at 1110 nm. Optical waveguide structure with high quality could improve the efficiency of laser emission. In this work, we fabricated the optical planar waveguide on Nd:YGG crystal by medium mass ion implantation which was convinced an effective method to realize a waveguide structure with superior optical properties. The sample is implanted by C ions at energy of 5.0 MeV with the fluence of 1 × 1015 ions/cm2. We researched the optical propagation properties in the Nd:YGG waveguide by end-face coupling and prism coupling method. The Nd ions fluorescent properties are obtained by a confocal micro-luminescence measurement. The fluorescent properties of Nd ions obtained good reservation after C ion implantation. Our work has reference value for the application of Nd:YGG crystal in the field of optical communication.

Dielectric functions, chemical and atomic compositions of the near surface layers of implanted GaAs by In+ ions

NASA Astrophysics Data System (ADS)

Kulik, M.; Kołodyńska, D.; Bayramov, A.; Drozdziel, A.; Olejniczak, A.; Żuk, J.

2018-06-01

The surfaces of (100) GaAs were irradiated with In+ ions. The implanted samples were isobaric annealed at 800 °C and then of dielectric function, the surface atomic concentrations of atoms and also the chemical composition of the near surface layers in these implanted semiconductor samples were obtained. The following investigation methods were used: spectroscopic ellipsometry (SE), Rutherford backscattering spectrometry analyses (RBSA) and X-ray photoelectron spectroscopy (XPS) in the study of the above mentioned quantities, respectively. The change of the shape spectra of the dielectric functions at about 3.0 eV phonon energy, diffusion of In+ ions as well as chemical composition changes were observed after ion implantation and the thermal treatment. Due to displacement of Ga ions from GaAs by the In+ ions the new chemical compound InAs was formed. The relative amounts Ga2O3 and As2O3 ratio increase in the native oxide layers with the fluences increase after the thermal treatment of the samples. Additionally, it was noticed that the quantities of InO2 increase with the increasing values of the irradiated ions before thermal treatment.

Enhancement of interaction of L-929 cells with functionalized graphene via COOH+ ion implantation vs. chemical method

PubMed Central

Zhao, Meng-li; Liu, Xiao-qi; Cao, Ye; Li, Xi-fei; Li, De-jun; Sun, Xue-liang; Gu, Han-qing; Wan, Rong-xin

2016-01-01

Low hydrophilicity of graphene is one of the major obstacles for biomaterials application. To create some hydrophilic groups on graphene is addressed this issue. Herein, COOH+ ion implantation modified graphene (COOH+/graphene) and COOH functionalized graphene were designed by physical ion implantation and chemical methods, respectively. The structure and surface properties of COOH+/graphene and COOH functionalized graphene were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and contact angle measurement. Compared with graphene, COOH+/graphene and COOH functionalized graphene revealed improvement of cytocompatibility, including in vitro cell viability and morphology. More importantly, COOH+/graphene exhibited better improvement effects than functionalized graphene. For instance, COOH+/graphene with 1 × 1018 ions/cm2 showed the best cell-viability, proliferation and stretching. This study demonstrated that ion implantation can better improve the cytocompatibility of the graphene. PMID:27845420

Au Colloids Formed by Ion Implantation in Muscovite Mica Studied by Vibrational and Electronic Spectroscopes and Atomic Force Microscopy

NASA Technical Reports Server (NTRS)

Tung, Y. S.; Henderson, D. O.; Mu, R.; Ueda, A.; Collins, W. E.; White, C. W.; Zuhr, R. A.; Zhu, Jane G.

1997-01-01

Au was implanted into the (001) surface of Muscovite mica at an energy of 1.1 MeV and at doses of 1, 3, 6, and 10 x 10(exp 16) ions/cu cm. Optical spectra of the as-implanted samples revealed a peak at 2.28 eV (545 nm) which is attributed to the surface plasmon absorption of Au colloids. The infrared reflectance measurements show a decreasing reflectivity with increasing ion dose in the Si-O stretching region (900-1200 /cm). A new peak observed at 967 /cm increases with the ion dose and is assigned to an Si-O dangling bond. Atomic force microscopy images of freshly cleaved samples implanted with 6 and 10 x 10(exp 16) ions/sq cm indicated metal colloids with diameters between 0.9- 1.5 nm. AFM images of the annealed samples showed irregularly shaped structures with a topology that results from the fusion of smaller colloids.

Uranium passivation by C + implantation: A photoemission and secondary ion mass spectrometry study

NASA Astrophysics Data System (ADS)

Nelson, A. J.; Felter, T. E.; Wu, K. J.; Evans, C.; Ferreira, J. L.; Siekhaus, W. J.; McLean, W.

2006-03-01

Implantation of 33 keV C + ions into polycrystalline U 238 with a dose of 4.3 × 10 17 cm -2 produces a physically and chemically modified surface layer that prevents further air oxidation and corrosion. X-ray photoelectron spectroscopy and secondary ion mass spectrometry were used to investigate the surface chemistry and electronic structure of this C + ion implanted polycrystalline uranium and a non-implanted region of the sample, both regions exposed to air for more than a year. In addition, scanning electron microscopy was used to examine and compare the surface morphology of the two regions. The U 4f, O 1s and C 1s core-level and valence band spectra clearly indicate carbide formation in the modified surface layer. The time-of-flight secondary ion mass spectrometry depth profiling results reveal an oxy-carbide surface layer over an approximately 200 nm thick UC layer with little or no residual oxidation at the carbide layer/U metal transitional interface.

Application of ion implantation in tooling industry

NASA Astrophysics Data System (ADS)

Straede, Christen A.

1996-06-01

In papers published during the last half of the 1980s it is often stated that the application of ion beams to non-semiconductor purposes seems ready for full-scale industrial exploitation. However, progress with respect to commercialisation of ion implantation has been slower than predicted, although the process is quite clearly building up niche markets, especially in the tooling industry. It is the main purpose of this paper to discuss the implementation of the process in the tooling market, and to describe strategies used to ensure its success. The basic idea has been to find niches where ion implantation out-performs other processes both technically and in prices. For instance, it has been clearly realised that one should avoid competing with physical vapour deposition or other coating techniques in market areas where they perform excellently, and instead find niches where the advantages of the ion implantation technique can be fully utilised. The paper will present typical case stories in order to illustrate market niches where the technique has its greatest successes and potential.

Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Zhang, Zhili; Song, Liang; Li, Weiyi; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Fan, Yaming; Deng, Xuguang; Li, Shuiming; Sun, Shichuang; Li, Xiajun; Yuan, Jie; Sun, Qian; Dong, Zhihua; Cai, Yong; Zhang, Baoshun

2017-08-01

In this paper, we systematically investigated the leakage mechanism of the ion-implantation isolated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrate. By means of combined DC tests at different temperatures and electric field dependence, we demonstrated the following original results: (1) It is proved that gate leakage is the main contribution to OFF-state leakage of ion-implantation isolated AlGaN/GaN MIS-HEMTs, and the gate leakage path is a series connection of the gate dielectric Si3N4 and Si3N4-GaN interface. (2) The dominant mechanisms of the leakage current through LPCVD-Si3N4 gate dielectric and Si3N4-GaN interface are identified to be Frenkel-Poole emission and two-dimensional variable range hopping (2D-VRH), respectively. (3) A certain temperature annealing could reduce the density of the interface state that produced by ion implantation, and consequently suppress the interface leakage transport, which results in a decrease in OFF-state leakage current of ion-implantation isolated AlGaN/GaN MIS-HEMTs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo Baonian; Gossmann, Hans-Joachim; Toh, Terry

Angle control has been widely accepted as the key requirement for ion implantation in semiconductor device processing. From an ion implanter point of view, the incident ion direction should be measured and corrected by suitable techniques, such as XP-VPS for the VIISta implanter platform, to ensure precision ion placement in device structures. So called V-curves have been adopted to generate the wafer-based calibration using channeling effects as the Si lattice steer ions into a channeling direction. Thermal Wave (TW) or sheet resistance (Rs) can be used to determine the minimum of the angle response curve. Normally it is expected thatmore » the TW and Rs have their respective minima at identical angles. However, the TW and Rs response to the angle variations does depend on factors such as implant species, dose, and wafer temperature. Implant damage accumulation effects have to be considered for data interpretation especially for some 'abnormal' V-curve data. In this paper we will discuss some observed 'abnormal' angle responses, such as a) TW/Rs reverse trend for Arsenic beam, 2) 'W' shape of Rs Boron, and 3) apparent TW/Rs minimum difference for high tilt characterization, along with experimental data and TCAD simulations.« less

Ultra-low-energy ion-beam synthesis of nanometer-separated Si nanoparticles and Ag nanocrystals 2D layers

NASA Astrophysics Data System (ADS)

Carrada, M.; Haj Salem, A.; Pecassou, B.; Paillard, V.; Ben Assayag, G.

2018-03-01

2D networks of Si and Ag nanocrystals have been fabricated in the same SiO2 matrix by Ultra-Low-Energy Ion-Beam-Synthesis. Our synthesis scheme differs from a simple sequential ion implantation and its key point is the control of the matrix integrity through an appropriate intermediate thermal annealing. Si nanocrystal layer is synthesised first due to high thermal budget required for nucleation, while the second Ag nanocrystal plane is formed during a subsequent implantation due to the high diffusivity of Ag in silica. The aim of this work is to show how it is possible to overcome the limitation related to ion mixing and implantation damage to obtain double layers of Si-NCs and Ag-NCs with controlled characteristics. For this, we take advantage of annealing under slight oxidizing ambient to control the oxidation of Si-NCs and the Si excess in the matrix. The nanocrystal characteristics and in particular their position and size can be adjusted thanks to a compromise between the implantation energy, the implanted dose for both Si and Ag ions and the intermediate annealing conditions (atmosphere, temperature and duration).

Irradiation with visible light enhances the antibacterial toxicity of silver nanoparticles produced by laser ablation

NASA Astrophysics Data System (ADS)

Ratti, Matthew; Naddeo, J. J.; Tan, Yuying; Griepenburg, Julianne C.; Tomko, John; Trout, Cory; O'Malley, Sean M.; Bubb, Daniel M.; Klein, Eric A.

2016-04-01

The rise of antibiotic-resistant bacteria is a rapidly growing global health concern. According to the Center for Disease Control, approximately 2 million illnesses and 23,000 deaths per year occur in the USA due to antibiotic resistance. In recent years, there has been a surge in the use of metal nanoparticles as coatings for orthopedic implants, wound dressings, and food packaging, due to their antimicrobial properties. In this report, we demonstrate that the antibacterial efficacy of silver nanoparticles (AgNPs) is enhanced with exposure to light from the visible spectrum. We find that the increased toxicity is due to augmented silver ion release and bacterial uptake. Interestingly, silver ion toxicity does not appear to depend on the formation of reactive oxygen species. Our findings provide a novel paradigm for using light to regulate the toxicity of AgNPs which may have a significant impact in the development of new antimicrobial therapeutics.

Application of TXRF for ion implanter dose matching experiments

NASA Astrophysics Data System (ADS)

Frost, M. R.; French, M.; Harris, W.

2004-06-01

Secondary ion mass spectrometry (SIMS) has been utilized for many years to measure the dose of ion implants in silicon for the purpose of verifying the ability of ion implantation equipment to accurately and reproducibly implant the desired species at the target dose. The development of statistically and instrumentally rigorous protocols has lead to high confidence levels, particularly with regard to accuracy and short-term repeatability. For example, high-dose, high-energy B implant dosimetry can be targeted to within ±1%. However, performing dose determination experiments using SIMS does have undesirable aspects, such as being highly labor intensive and sample destructive. Modern total reflection X-ray fluorescence (TXRF) instruments are equipped with capabilities for full 300 mm wafer handling, automated data acquisition software and intense X-ray sources. These attributes enable the technique to overcome the SIMS disadvantages listed above, as well as provide unique strengths that make it potentially highly amenable to implanter dose matching. In this paper, we report on data collected to date that provides confidence that TXRF is an effective and economical method to perform these measurements within certain limitations. We have investigated a number of ion implanted species that are within the "envelope" of TXRF application. This envelope is defined by a few important parameters. Species: For the anode materials used in the more common X-ray sources on the market, each has its own set of elements that can be detected. We have investigated W and Mo X-ray sources, which are the most common in use in commercial instrumentation. Implant energy: In general, if the energy of the implanted species is too high (or more specifically, the distribution of the implanted species is too deep), the amount of dopant not detected by TXRF may be significant, increasing the error of the measurement. Therefore, for each species investigated, the implant energy cannot exceed a certain level. Dose: Logically, as the implanted dose falls below a certain point, the concentration will be below the TXRF detection limit. In addition to the improved precision of TXRF over SIMS for dose matching, a number of other advantages will be discussed.

Synergistic Effects of Iodine and Silver Ions Co-Implanted in 6H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuhudzai, Remeredzai J.; Malherbe, Johan; Hlatshwayo, T. T.

2015-10-23

Motivated by the aim of understanding the release of fission products through the SiC coating of fuel kernels in modern high temperature nuclear reactors, a fundamental investigation is conducted to understand the synergistic effects of implanted silver (Ag) and iodine (I) in 6H-SiC. The implantation of the individual species, as well as the co-implantation of 360 keV ions of I and Ag at room temperature in 6H-SiC and their subsequent annealing behavior has been investigated by Secondary Ion Mass Spectrometry (SIMS), Atom Probe Tomography (APT) and X-ray Photoelectron Spectroscopy (XPS). SIMS and APT measurements indicated the presence of Ag inmore » the co-implanted samples after annealing at 1500 ºC for 30 hours in sharp contrast to the samples implanted with Ag only. In samples implanted with Ag only, complete loss of the implanted Ag was observed. However, for I only implanted samples, some iodine was retained. APT of annealed co-implanted 6H-SiC showed clear spatial association of Ag and I clusters in SiC, which can be attributed to the observed I assisted retention of Ag after annealing. Such detailed studies will be necessary to identify the fundamental mechanism of fission products migration through SiC coatings.« less

Adhesive and abrasive wear mechanisms in ion implanted metals

NASA Astrophysics Data System (ADS)

Dearnaley, G.

1985-03-01

The distinction between adhesive and abrasive wear processes was introduced originally by Burwell during the nineteen-fifties, though some authors prefer to classify wear according to whether it is mild or severe. It is argued here that, on the basis of the performance of a variety of ion implanted metal surfaces, exposed to different modes of wear, the Burwell distinction is a valid one which, moreover, enables us to predict under which circumstances a given treatment will perform well. It is shown that, because wear rates under abrasive conditions are very sensitive to the ratio of the hardness of the surface to that of the abrasive particles, large increases in working life are attainable as a result of ion implantation. Under adhesive wear conditions, the wear rate appears to fall inversely as the hardness increases, and it is advantageous to implant species which will create and retain a hard surface oxide or other continuous film in order to reduce metal-metal contact. By the appropriate combination of physico-chemical changes in an implanted layer it has been possible to reduce wear rates by up to three orders of magnitude. Such rates compensate for the shallow depths achievable by ion implantation.

High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing

NASA Astrophysics Data System (ADS)

Niwa, Takaki; Fujii, Takahiro; Oka, Tohru

2017-09-01

A high activation ratio of Mg ion implantation by conventional rapid thermal annealing (RTA) was demonstrated. To obtain the high activation ratio of Mg ion implantation, the dependence of hole concentration on Mg dose was investigated. A maximum hole concentration and a high activation ratio of 2.3% were obtained at a Mg dose of 2.3 × 1014 cm-2 between 9.2 × 1013 and 2.3 × 1015 cm-2. The ratio is, to the best of our knowledge, the highest ever obtained by conventional RTA.

Radiosensitizing Pancreatic Cancer Xenografts by an Implantable Micro-Oxygen Generator.

PubMed

Cao, Ning; Song, Seung Hyun; Maleki, Teimour; Shaffer, Michael; Stantz, Keith M; Cao, Minsong; Kao, Chinghai; Mendonca, Marc S; Ziaie, Babak; Ko, Song-Chu

2016-04-01

Over the past decades, little progress has been made to improve the extremely low survival rates in pancreatic cancer patients. Extreme hypoxia observed in pancreatic tumors contributes to the aggressive and metastatic characteristics of this tumor and can reduce the effectiveness of conventional radiation therapy and chemotherapy. In an attempt to reduce hypoxia-induced obstacles to effective radiation treatment, we used a novel device, the implantable micro-oxygen generator (IMOG), for in situ tumor oxygenation. After subcutaneous implantation of human pancreatic xenograft tumors in athymic rats, the IMOG was wirelessly powered by ultrasonic waves, producing 30 μA of direct current (at 2.5 V), which was then utilized to electrolyze water and produce oxygen within the tumor. Significant oxygen production by the IMOG was observed and corroborated using the NeoFox oxygen sensor dynamically. To test the radiosensitization effect of the newly generated oxygen, the human pancreatic xenograft tumors were subcutaneously implanted in nude mice with either a functional or inactivated IMOG device. The tumors in the mice were then exposed to ultrasonic power for 10 min, followed by a single fraction of 5 Gy radiation, and tumor growth was monitored thereafter. The 5 Gy irradiated tumors containing the functional IMOG exhibited tumor growth inhibition equivalent to that of 7 Gy irradiated tumors that did not contain an IMOG. Our study confirmed that an activated IMOG is able to produce sufficient oxygen to radiosensitize pancreatic tumors, enhancing response to single-dose radiation therapy.

Method For Plasma Source Ion Implantation And Deposition For Cylindrical Surfaces

DOEpatents

Fetherston, Robert P. , Shamim, Muhammad M. , Conrad, John R.

1997-12-02

Uniform ion implantation and deposition onto cylindrical surfaces is achieved by placing a cylindrical electrode in coaxial and conformal relation to the target surface. For implantation and deposition of an inner bore surface the electrode is placed inside the target. For implantation and deposition on an outer cylindrical surface the electrode is placed around the outside of the target. A plasma is generated between the electrode and the target cylindrical surface. Applying a pulse of high voltage to the target causes ions from the plasma to be driven onto the cylindrical target surface. The plasma contained in the space between the target and the electrode is uniform, resulting in a uniform implantation or deposition of the target surface. Since the plasma is largely contained in the space between the target and the electrode, contamination of the vacuum chamber enclosing the target and electrodes by inadvertent ion deposition is reduced. The coaxial alignment of the target and the electrode may be employed for the ion assisted deposition of sputtered metals onto the target, resulting in a uniform coating of the cylindrical target surface by the sputtered material. The independently generated and contained plasmas associated with each cylindrical target/electrode pair allows for effective batch processing of multiple cylindrical targets within a single vacuum chamber, resulting in both uniform implantation or deposition, and reduced contamination of one target by adjacent target/electrode pairs.

Characterisation of Cs ion implanted GaN by DLTS

NASA Astrophysics Data System (ADS)

Ngoepe, P. N. M.; Meyer, W. E.; Auret, F. D.; Omotoso, E.; Hlatshwayo, T. T.; Diale, M.

2018-04-01

Deep level transient spectroscopy (DLTS) was used to characterise Cs implanted GaN grown by hydride vapour phase epitaxy (HVPE). This implantation was done at room temperature using energy of 360 keV to a fluence of 10-11 cm-2. A defect with activation energy of 0.19 eV below the conduction band and an apparent capture cross section of 1.1 × 10-15 cm2 was induced. This defect has previously been observed after rare earth element (Eu, Er and Pr) implantation. It has also been reported after electron, proton and He ion implantation.

Effets optiques et structurels de l'implantation ionique dans des couches minces polymeres

NASA Astrophysics Data System (ADS)

Cottin, Pierre

The main goal of this work is to highlight the effect of ion implantation---a widely spread technique to modify chemical, electrical or optical properties of materials---on the third order nonlinear optical properties (chi (3)) of polymers. This study was limited to four polymers (PMMA, PVK, PVA, CA) for which we developed a fabrication process to obtain high optical quality thin films and controlled thickness compatible with ion implantation depth. Moreover, these polymers show different chemical structures and have in common to have very low nonlinear optical properties. Two faces of the problem were studied. First, the chemical structure of these polymers was characterized using ultraviolet and infrared spectroscopy before and after ion implantation and then was compared with which of intrinsic nonlinear optical polymers. These analysis have clearly shown that from one hand, ion implantation leads to a great number of bond breaks but from the other hand, it creates a high concentration of conjugated bonds characteristic of nonlinear optical polymers. Second, the third order nonlinear optical properties of ion implanted polymers were measured by nonlinear waveguide coupling and by third harmonic generation. For the first method, the coupling function was performed by a diffraction grating etched in a glass substrate whose fabrication process was developed in this particular case. In both cases, the used laser wave-length was 1064 nm with pulse duration of 30 ps and 5 ns respectively. The corresponding modelization for each of these techniques was established and numerically implemented. Both techniques have shown an increase of chi(3) for these polymers after ion implantation but however, they can not reach the performance of chemically designed nonlinear optical polymers. The best results were obtained for 50 keV helium implanted PMMA given |chi(3)(-3o; o, o, o)| = 7.2 x 10-21 m2.V-2 which is six time greater than the pristine material.

Concurrent in situ ion irradiation transmission electron microscope

DOE PAGES

Hattar, K.; Bufford, D. C.; Buller, D. L.

2014-08-29

An in situ ion irradiation transmission electron microscope has been developed and is operational at Sandia National Laboratories. This facility permits high spatial resolution, real time observation of electron transparent samples under ion irradiation, implantation, mechanical loading, corrosive environments, and combinations thereof. This includes the simultaneous implantation of low-energy gas ions (0.8–30 keV) during high-energy heavy ion irradiation (0.8–48 MeV). In addition, initial results in polycrystalline gold foils are provided to demonstrate the range of capabilities.

Corrosion resistance of titanium ion implanted AZ91 magnesium alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu Chenglong; Xin Yunchang; Tian Xiubo

2007-03-15

Degradable metal alloys constitute a new class of materials for load-bearing biomedical implants. Owing to their good mechanical properties and biocompatibility, magnesium alloys are promising in degradable prosthetic implants. The objective of this study is to improve the corrosion behavior of surgical AZ91 magnesium alloy by titanium ion implantation. The surface characteristics of the ion implanted layer in the magnesium alloys are examined. The authors' results disclose that an intermixed layer is produced and the surface oxidized films are mainly composed of titanium oxide with a lesser amount of magnesium oxide. X-ray photoelectron spectroscopy reveals that the oxide has threemore » layers. The outer layer which is 10 nm thick is mainly composed of MgO and TiO{sub 2} with some Mg(OH){sub 2}. The middle layer that is 50 nm thick comprises predominantly TiO{sub 2} and MgO with minor contributions from MgAl{sub 2}O{sub 4} and TiO. The third layer from the surface is rich in metallic Mg, Ti, Al, and Ti{sub 3}Al. The effects of Ti ion implantation on the corrosion resistance and electrochemical behavior of the magnesium alloys are investigated in simulated body fluids at 37{+-}1 deg. C using electrochemical impedance spectroscopy and open circuit potential techniques. Compared to the unimplanted AZ91 alloy, titanium ion implantation significantly shifts the open circuit potential (OCP) to a more positive potential and improves the corrosion resistance at OCP. This phenomenon can be ascribed to the more compact surface oxide film, enhanced reoxidation on the implanted surface, as well as the increased {beta}-Mg{sub 12}Al{sub 17} phase.« less

75 FR 20382 - Innovion Corporation, Gresham, Oregon; Notice of Affirmative Determination Regarding Application...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-04-19

... based on the findings that there was no increase in imports or shift/ acquisition of ion implantation... major customer cancelling a contract with the workers' firm in order to perform ion implantation...

Ion implantation reduces radiation sensitivity of metal oxide silicon /MOS/ devices

NASA Technical Reports Server (NTRS)

1971-01-01

Implanting nitrogen ions improves hardening of silicon oxides 30 percent to 60 percent against ionizing radiation effects. Process reduces sensitivity, but retains stability normally shown by interfaces between silicon and thermally grown oxides.

Non-Contact Measurement of Thermal Diffusivity in Ion-Implanted Nuclear Materials

NASA Astrophysics Data System (ADS)

Hofmann, F.; Mason, D. R.; Eliason, J. K.; Maznev, A. A.; Nelson, K. A.; Dudarev, S. L.

2015-11-01

Knowledge of mechanical and physical property evolution due to irradiation damage is essential for the development of future fission and fusion reactors. Ion-irradiation provides an excellent proxy for studying irradiation damage, allowing high damage doses without sample activation. Limited ion-penetration-depth means that only few-micron-thick damaged layers are produced. Substantial effort has been devoted to probing the mechanical properties of these thin implanted layers. Yet, whilst key to reactor design, their thermal transport properties remain largely unexplored due to a lack of suitable measurement techniques. Here we demonstrate non-contact thermal diffusivity measurements in ion-implanted tungsten for nuclear fusion armour. Alloying with transmutation elements and the interaction of retained gas with implantation-induced defects both lead to dramatic reductions in thermal diffusivity. These changes are well captured by our modelling approaches. Our observations have important implications for the design of future fusion power plants.

Non-Contact Measurement of Thermal Diffusivity in Ion-Implanted Nuclear Materials

DOE PAGES

Hofmann, F.; Mason, D. R.; Eliason, J. K.; ...

2015-11-03

Knowledge of mechanical and physical property evolution due to irradiation damage is essential for the development of future fission and fusion reactors. Ion-irradiation provides an excellent proxy for studying irradiation damage, allowing high damage doses without sample activation. Limited ion-penetration-depth means that only few-micron-thick damaged layers are produced. Substantial effort has been devoted to probing the mechanical properties of these thin implanted layers. Yet, whilst key to reactor design, their thermal transport properties remain largely unexplored due to a lack of suitable measurement techniques. Here we demonstrate non-contact thermal diffusivity measurements in ion-implanted tungsten for nuclear fusion armour. Alloying withmore » transmutation elements and the interaction of retained gas with implantation-induced defects both lead to dramatic reductions in thermal diffusivity. These changes are well captured by our modelling approaches. Our observations have important implications for the design of future fusion power plants.« less

Non-Contact Measurement of Thermal Diffusivity in Ion-Implanted Nuclear Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hofmann, F.; Mason, D. R.; Eliason, J. K.

Knowledge of mechanical and physical property evolution due to irradiation damage is essential for the development of future fission and fusion reactors. Ion-irradiation provides an excellent proxy for studying irradiation damage, allowing high damage doses without sample activation. Limited ion-penetration-depth means that only few-micron-thick damaged layers are produced. Substantial effort has been devoted to probing the mechanical properties of these thin implanted layers. Yet, whilst key to reactor design, their thermal transport properties remain largely unexplored due to a lack of suitable measurement techniques. Here we demonstrate non-contact thermal diffusivity measurements in ion-implanted tungsten for nuclear fusion armour. Alloying withmore » transmutation elements and the interaction of retained gas with implantation-induced defects both lead to dramatic reductions in thermal diffusivity. These changes are well captured by our modelling approaches. Our observations have important implications for the design of future fusion power plants.« less

Non-Contact Measurement of Thermal Diffusivity in Ion-Implanted Nuclear Materials

PubMed Central

Hofmann, F.; Mason, D. R.; Eliason, J. K.; Maznev, A. A.; Nelson, K. A.; Dudarev, S. L.

2015-01-01

Knowledge of mechanical and physical property evolution due to irradiation damage is essential for the development of future fission and fusion reactors. Ion-irradiation provides an excellent proxy for studying irradiation damage, allowing high damage doses without sample activation. Limited ion-penetration-depth means that only few-micron-thick damaged layers are produced. Substantial effort has been devoted to probing the mechanical properties of these thin implanted layers. Yet, whilst key to reactor design, their thermal transport properties remain largely unexplored due to a lack of suitable measurement techniques. Here we demonstrate non-contact thermal diffusivity measurements in ion-implanted tungsten for nuclear fusion armour. Alloying with transmutation elements and the interaction of retained gas with implantation-induced defects both lead to dramatic reductions in thermal diffusivity. These changes are well captured by our modelling approaches. Our observations have important implications for the design of future fusion power plants. PMID:26527099

Observations of Ag diffusion in ion implanted SiC

DOE PAGES

Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; ...

2015-03-17

The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated,more » including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.« less

Growth of surface structures correlated with structural and mechanical modifications of brass by laser-induced Si plasma ions implantation

NASA Astrophysics Data System (ADS)

Ahmad, Shahbaz; Bashir, Shazia; Rafique, M. Shahid; Yousaf, Daniel

2017-04-01

Laser-produced Si plasma is employed as an ion source for implantation on the brass substrate for its surface, structural, and mechanical modifications. Thomson parabola technique is employed for the measurement of energy and flux of Si ions using CR-39. In response to stepwise increase in number of laser pulses from 3000 to 12000, four brass substrates were implanted by laser-induced Si plasma ions of energy 290 keV at different fluxes ranging from 45 × 1012 to 75 × 1015 ions/cm2. SEM analysis reveals the formation of nano/micro-sized irregular shaped cavities and pores for the various ion fluxes for varying numbers of laser pulses from 3000 to 9000. At the maximum ion flux for 12,000 pulses, distinct and organized grains with hexagonal and irregular shaped morphology are revealed. X-ray diffractometer (XRD) analysis exhibits that a new phase of CuSi (311) is identified which confirms the implantation of Si ions in brass substrate. A significant decrease in mechanical properties of implanted brass, such as Yield Stress (YS), Ultimate Tensile Strength (UTS), and hardness, with increasing laser pulses from 3000 to 6000 is observed. However, with increasing laser pulses from 9000 to a maximum value of 12,000, an increase in mechanical properties like hardness, YS, and UTS is observed. The generation as well as annihilation of defects, recrystallization, and intermixing of Si precipitates with brass matrix is considered to be responsible for variations in surface, structural, and mechanical modifications of brass.

Raman Scattering Studies on Ag Nanocluster Composites Formed by Ion Implantation into Silica

NASA Astrophysics Data System (ADS)

Ren, Feng; Jiang, Chang Zhong; Fu, De Jun; Fu, Qiang

2005-12-01

Highly-pure amorphous silica slides were implanted by 200 keV Ag ions with doses ranged from 1× 1016 to 2× 1017 ions/cm2. Optical absorption spectra show that Ag nanoclusters with various sizes have been formed. Enhancement of surface enhanced Raman scattering signal by a factor up to about 103 was obtained by changing the Ag particle size. The silica was damaged by the implanted Ag ions, and the large compression stress on the silica leads to the shift of Raman peaks. New bands at 1368 and 1586 cm-1, which are attributed to the vibration of Ag-O bond and O2 molecules in silica, are observed in the samples with doses higher than 1× 1017 ions/cm2.

Electrical and optical properties of nitrile rubber modified by ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

S, Najidha; Predeep, P.

2014-10-15

Implantation of N{sup +} ion beams are performed on to a non-conjugated elastomer, acrylonirtle butadiene rubber (NBR) with energy 60 keV in the fluence range of 10{sup 14} to 10{sup 16} ions/cm{sup 2}. A decrease in the resistivity of the sample by about eight orders of magnitude is observed in the implanted samples along with color changes. The ion exposed specimens were characterized by means of UV/Vis spectroscopy which shows a shift in the absorption edge value for the as deposited polymer towards higher wavelengths. The band gap is evaluated from the absorption spectra and is found to decrease withmore » increasing fluence. This study can possibly throw light on ion induced changes in the polymer surface.« less

Optical waveguides in fluoride lead silicate glasses fabricated by carbon ion implantation

NASA Astrophysics Data System (ADS)

Shen, Xiao-liang; Wang, Yue; Zhu, Qi-feng; Lü, Peng; Li, Wei-nan; Liu, Chun-xiao

2018-03-01

The carbon ion implantation with energy of 4.0 MeV and a dose of 4.0×1014 ions/cm2 is employed for fabricating the optical waveguide in fluoride lead silicate glasses. The optical modes as well as the effective refractive indices are measured by the prism coupling method. The refractive index distribution in the fluoride lead silicate glass waveguide is simulated by the reflectivity calculation method (RCM). The light intensity profile and the energy losses are calculated by the finite-difference beam propagation method (FD-BPM) and the program of stopping and range of ions in matter (SRIM), respectively. The propagation properties indicate that the C2+ ion-implanted fluoride lead silicate glass waveguide is a candidate for fabricating optical devices.

Metal Ion-Loaded Nanofibre Matrices for Calcification Inhibition in Polyurethane Implants

PubMed Central

Singh, Charanpreet; Wang, Xungai

2017-01-01

Pathologic calcification leads to structural deterioration of implant materials via stiffening, stress cracking, and other structural disintegration mechanisms, and the effect can be critical for implants intended for long-term or permanent implantation. This study demonstrates the potential of using specific metal ions (MI)s for inhibiting pathological calcification in polyurethane (PU) implants. The hypothesis of using MIs as anti-calcification agents was based on the natural calcium-antagonist role of Mg2+ ions in human body, and the anti-calcification effect of Fe3+ ions in bio-prosthetic heart valves has previously been confirmed. In vitro calcification results indicated that a protective covering mesh of MI-doped PU can prevent calcification by preventing hydroxyapatite crystal growth. However, microstructure and mechanical characterisation revealed oxidative degradation effects from Fe3+ ions on the mechanical properties of the PU matrix. Therefore, from both a mechanical and anti-calcification effects point of view, Mg2+ ions are more promising candidates than Fe3+ ions. The in vitro MI release experiments demonstrated that PU microphase separation and the structural design of PU-MI matrices were important determinants of release kinetics. Increased phase separation in doped PU assisted in consistent long-term release of dissolved MIs from both hard and soft segments of the PU. The use of a composite-sandwich mesh design prevented an initial burst release which improved the late (>20 days) release rate of MIs from the matrix. PMID:28644382

Recoil implantation of boron into silicon by high energy silicon ions

NASA Astrophysics Data System (ADS)

Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan

2001-07-01

A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.

Annealing Effects on the Surface Plasmon of MgO Implanted with Gold

NASA Technical Reports Server (NTRS)

Ueda, A.; Mu, R.; Tung, Y. -S.; Henderson, D. O.; White, C. W.; Zuhr, R. A.; Zhu, Jane G.; Wang, P. W.

1997-01-01

Gold ion implantation was carried out with the energy of 1.1 MeV into (100) oriented MgO single crystal. Implanted doses are 1, 3, 6, 10 x 10(exp 16) ions/sq cm. The gold irradiation results in the formation of gold ion implanted layer with a thickness of 0.2 microns and defect formation. In order to form gold colloids from the as-implanted samples, we annealed the gold implanted MgO samples in three kinds of atmospheres: (1)Ar only, (2)H2 and Ar, and (3)O2 and Ar. The annealing over 1200 C enhanced the gold colloid formation which shows surface plasmon resonance band of gold. The surface plasmon bands of samples annealed in three kinds of atmospheres were found to be at 535 nm (Ar only), 524 nm(H2+Ar), and 560 nm (02+Ar), The band positions of surface plasmon can be reversibly changed by an additional annealing.

Angle Control on the Optima HE/XE Ion Implanter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bell, Edward; Satoh, Shu

2008-11-03

The Optima HE/XE is the latest generation of high energy ion implanter from Axcelis, combining proven RF linear accelerator technology with new single wafer processing. The architecture of the implanter is designed to provide a parallel beam at the wafer plane over the full range of implant energies and beam currents. One of the advantages of this system is the ability to control both the horizontal and vertical implant angles for each implant. Included in the design is the ability to perform in situ measurements of the horizontal and vertical angles of the beam in real time. The method ofmore » the horizontal and vertical angle measurements is described in this paper.« less

Preventing hypoxia-induced cell death in beta cells and islets via hydrolytically activated, oxygen-generating biomaterials

PubMed Central

Pedraza, Eileen; Coronel, Maria M.; Fraker, Christopher A.; Ricordi, Camillo; Stabler, Cherie L.

2012-01-01

A major hindrance in engineering tissues containing highly metabolically active cells is the insufficient oxygenation of these implants, which results in dying or dysfunctional cells in portions of the graft. The development of methods to increase oxygen availability within tissue-engineered implants, particularly during the early engraftment period, would serve to allay hypoxia-induced cell death. Herein, we designed and developed a hydrolytically activated oxygen-generating biomaterial in the form of polydimethylsiloxane (PDMS)-encapsulated solid calcium peroxide, PDMS-CaO2. Encapsulation of solid peroxide within hydrophobic PDMS resulted in sustained oxygen generation, whereby a single disk generated oxygen for more than 6 wk at an average rate of 0.026 mM per day. The ability of this oxygen-generating material to support cell survival was evaluated using a β cell line and pancreatic rat islets. The presence of a single PDMS-CaO2 disk eliminated hypoxia-induced cell dysfunction and death for both cell types, resulting in metabolic function and glucose-dependent insulin secretion comparable to that in normoxic controls. A single PDMS-CaO2 disk also sustained enhanced β cell proliferation for more than 3 wk under hypoxic culture conditions. Incorporation of these materials within 3D constructs illustrated the benefits of these materials to prevent the development of detrimental oxygen gradients within large implants. Mathematical simulations permitted accurate prediction of oxygen gradients within 3D constructs and highlighted conditions under which supplementation of oxygen tension would serve to benefit cellular viability. Given the generality of this platform, the translation of these materials to other cell-based implants, as well as ischemic tissues in general, is envisioned. PMID:22371586

Comparison of surface characteristics of retrieved cobalt-chromium femoral heads with and without ion implantation.

PubMed

McGrory, Brian J; Ruterbories, James M; Pawar, Vivek D; Thomas, Reginald K; Salehi, Abraham B

2012-01-01

Nitrogen ion implantation of CoCr is reported to produce increased surface hardness and a lower friction surface. Femoral heads with and without ion implantation retrieved from 1997 to 2003 were evaluated for surface roughness (average surface roughness [Ra], mean peak height [Rpm], and maximum distance from peak to valley [Rmax]), nanohardness, and the ion-treated layer thickness. The difference in average Rmax (P = .033) and average Rpm (P = .008) was statistically significant, but there was no correlation between the average or maximum roughness parameters (average surface roughness, Rmax, and Rpm) and time in vivo (P > .05). Overall, nanohardness was greater for the low-friction ion-treated heads (P < .001); and it decreased with increasing time in vivo (P = .01). Ion treatment produces an increased surface hardness, but the advantage of this increased hardness appears to dissipate over time in vivo. Copyright © 2012 Elsevier Inc. All rights reserved.

Application of laser driven fast high density plasma blocks for ion implantation

NASA Astrophysics Data System (ADS)

Sari, Amir H.; Osman, F.; Doolan, K. R.; Ghoranneviss, M.; Hora, H.; Höpfl, R.; Benstetter, G.; Hantehzadeh, M. H.

2005-10-01

The measurement of very narrow high density plasma blocks of high ion energy from targets irradiated with ps-TW laser pulses based on a new skin depth interaction process is an ideal tool for application of ion implantation in materials, especially of silicon, GaAs, or conducting polymers, for micro-electronics as well as for low cost solar cells. A further application is for ion sources in accelerators with most specifications of many orders of magnitudes advances against classical ion sources. We report on near band gap generation of defects by implantation of ions as measured by optical absorption spectra. A further connection is given for studying the particle beam transforming of n-type semiconductors into p-type and vice versa as known from sub-threshold particle beams. The advantage consists in the use of avoiding aggressive or rare chemical materials when using the beam techniques for industrial applications.

The Development of Surface Roughness and Implications for Cellular Attachment in Biomedical Applications

NASA Technical Reports Server (NTRS)

Banks, Bruce; Miller, Sharon; deGroh, Kim; Chan, Amy; Sahota, Mandeep

2001-01-01

The application of a microscopic surface texture produced by ion beam sputter texturing to the surfaces of polymer implants has been shown to result in significant increases in cellular attachment compared to smooth surface implants in animal studies. A collaborative program between NASA Glenn Research Center and the Cleveland Clinic Foundation has been established to evaluate the potential for improving osteoblast attachment to surfaces that have been microscopically roughened by atomic oxygen texturing. The range of surface textures that are feasible depends upon both the texturing process and the duration of treatment. To determine whether surface texture saturates or continues to increase with treatment duration, an effort was conducted to examine the development of surface textures produced by various physical and chemical erosion processes. Both experimental tests and computational modeling were performed to explore the growth of surface texture with treatment time. Surface texturing by means of abrasive grit blasting of glass, stainless steel, and polymethylmethacry I ate surfaces was examined to measure the growth in roughness with grit blasting duration by surface profilometry measurements. Laboratory tests and computational modeling was also conducted to examine the development of texture on Aclar(R) (chlorotfifluoroethylene) and Kapton(R) polyimide, respectively. For the atomic oxygen texturing tests of Aclar(R), atomic force microscopy was used to measure the development of texture with atomic oxygen fluence. The results of all the testing and computational modeling support the premise that development of surface roughness obeys Poisson statistics. The results indicate that surface roughness does not saturate but increases as the square root of the treatment time.

Recent results on implantation and permeation into fusion reactor materials

NASA Astrophysics Data System (ADS)

Anderl, R. A.; Holland, D. F.; Longhurst, G. R.; Struttman, D. A.

This paper reports on implantation-driven permeation experiments that have been made for primary candidate alloy (PCA) and the ferritic steel HT-9 using deuterium ion beams from an accelerator. The results include measurements of the implantation flux and fluence dependence of the deuterium reemission and permeation for specimens heated to approximately 430(0)C. Simultaneous measurements of the ions sputtered from the specimen front surface with a secondary ion mass spectrometer provided some characterization of the surface condition throughout an experiment. For both materials, the permeation rate was lowered by the implantation process. However, the steady state permeation rate for HT-9 was found to be at least a factor of 5 greater than that for PCA.

Raman spectroscopy of few-layer graphene prepared by C2-C6 cluster ion implantation

NASA Astrophysics Data System (ADS)

Wang, Z. S.; Zhang, R.; Zhang, Z. D.; Huang, Z. H.; Liu, C. S.; Fu, D. J.; Liu, J. R.

2013-07-01

Few-layer graphene has been prepared on 300 nm-thick Ni films by C2-C6 cluster ion implantation at 20 keV/cluster. Raman spectroscopy reveals significant influence of the number of atoms in the cluster, the implantation dose, and thermal treatment on the structure of the graphene layers. In particular, the graphene samples exhibit a sharp G peak at 1584 cm-1 and 2D peaks at 2711-2717 cm-1. The IG/I2D ratios higher than 1.70 and IG/ID ratio as high as 1.95 confirm that graphene sheets with low density of defects have been synthesized with much improved quality by ion implantation with larger clusters of C4-C6.

Structures and optical properties of \\text{H}_{2}^{+} -implanted GaN epi-layers

NASA Astrophysics Data System (ADS)

Li, B. S.; Wang, Z. G.

2015-06-01

The implantation damage build-up and optical properties of GaN epitaxial films under \\text{H}2+ ion implantation have been investigated by a combination of Rutherford backscattering in channeling geometry, Raman spectroscopy, UV-visible spectroscopy and transmission electron microscopy. GaN epitaxial films were implanted with 134 keV \\text{H}2+ ions to doses ranging from 3.75   ×   1016 to 1.75   ×   1017 \\text{H}2+  cm-2 at room temperature or the same dose of 1.5   ×   1017 \\text{H}2+  cm-2 at room temperature, 573 and 723 K. The dependence of lattice disorder induced by \\text{H}2+ -implantation on the ion dose can be divided into a three-step damage process. A strong influence of the H concentration on the defect accumulation is discussed. The decrease in relative Ga disorder induced by \\text{H}2+ -implantation is linear with increasing implantation temperature. The absorption coefficient of GaN epitaxial films increases with increasing ion dose, leading to the decrease in Raman scattering spectra of Ga-N vibration. With increasing implantation doses up to 5   ×   1016 \\text{H}2+  cm-2, nanoscale hydrogen bubbles are observed in the H deposition peak region. Interstitial-type dislocation loops are observed in the damaged layer located near the damage peak region, and the geometry of the dislocation loops produced by H implantation is analyzed. The surface layer is almost free of lattice disorder induced by \\text{H}2+ -implantation.

Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al2O3 single crystal implanted with Mg ions

NASA Astrophysics Data System (ADS)

Tardío, M.; Egaña, A.; Ramírez, R.; Muñoz-Santiuste, J. E.; Alves, E.

2016-07-01

The electrical conductivity in α-Al2O3 single crystals implanted with Mg ions in two different crystalline orientations, parallel and perpendicular to c axis, was investigated. The samples were implanted at room temperature with energies of 50 and 100 keV and fluences of 1 × 1015, 5 × 1015 and 5 × 1016 ions/cm2. Optical characterization reveals slight differences in the absorption bands at 6.0 and 4.2 eV, attributed to F type centers and Mie scattering from Mg precipitates, respectively. DC electrical measurements using the four and two-point probe methods, between 295 and 490 K, were used to characterize the electrical conductivity of the implanted area (Meshakim and Tanabe, 2001). Measurements in this temperature range indicate that: (1) the electrical conductivity is thermally activated independently of crystallographic orientation, (2) resistance values in the implanted region decrease with fluence levels, and (3) the I-V characteristic of electrical contacts in samples with perpendicular c axis orientation is clearly ohmic, whereas contacts are blocking in samples with parallel c axis. When thin layers are sequentially removed from the implanted region by immersing the sample in a hot solution of nitric and fluorhydric acids the electrical resistance increases until reaching the values of non-implanted crystal (Jheeta et al., 2006). We conclude that the enhancement in conductivity observed in the implanted regions is related to the intrinsic defects created by the implantation rather than to the implanted Mg ions (da Silva et al., 2002; Tardío et al., 2001; Tardío et al., 2008).

Rutherford Backscattering Spectrometry studies of 100 keV nitrogen ion implanted polypropylene polymer

NASA Astrophysics Data System (ADS)

Chawla, Mahak; Aggarwal, Sanjeev; Sharma, Annu

2017-09-01

The effect of nitrogen ion implantation on the structure and composition in polypropylene (PP) polymer has been studied. Implantation was carried out using 100 keV N+ ions at different fluences of 1 × 1015, 1 × 1016 and 1 × 1017 ions cm-2 with beam current density of ∼0.65 μA cm-2. Surface morphological changes in the pre- and post-implanted PP specimens have been studied using Rutherford Backscattering Spectrometry (RBS) and UV-Visible Spectroscopy. The spatial distribution of implantation induced modification in the form of carbonization and dehydrogenation in the near surface region of PP matrix, the projected range, retained dose of implanted nitrogen, the various elements present in the implanted layers and their differential cross-sections have been analyzed using RBS spectra. RUMP simulation yielded an increase in the concentration of carbon near the surface from 33 at.% (virgin) to 42 at.% at fluence of 1 × 1017 N+ cm-2. Further, optical absorption has been found to increase with a shift in the absorption edge from UV towards visible region with increasing fluence. UV-Vis absorption spectra also indicate a drastic decrease in optical energy gap from 4.12 eV (virgin) to 0.25 eV (1 × 1017 N+ cm-2) indicating towards the formation of carbonaceous network in the implanted region. All these changes observed using UV-Visible have been further correlated with the outcomes of the RBS characterization.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Changdong; Department of Radiation Oncology, Qilu Hospital, Shandong University, Jinan, Shandong 250012; Lu, Fei, E-mail: lufei@sdu.edu.cn

We investigated lattice modification and its physical mechanism in H and He co-implanted, z-cut potassium titanyl phosphate (KTiOPO{sub 4}). The samples were implanted with 110 keV H and 190 keV He, both to a fluence of 4 × 10{sup 16 }cm{sup −2}, at room temperature. Rutherford backscattering/channeling, high-resolution x-ray diffraction, and transmission electron microscopy were used to examine the implantation-induced structural changes and strain. Experimental and simulated x-ray diffraction results show that the strain in the implanted KTiOPO{sub 4} crystal is caused by interstitial atoms. The strain and stress are anisotropic and depend on the crystal's orientation. Transmission electron microscopy studies indicate that ion implantationmore » produces many dislocations in the as-implanted samples. Annealing can induce ion aggregation to form nanobubbles, but plastic deformation and ion out-diffusion prevent the KTiOPO{sub 4} surface from blistering.« less

Formation of mono-layered gold nanoparticles in shallow depth of SiO 2 thin film by low-energy negative-ion implantation

NASA Astrophysics Data System (ADS)

Tsuji, H.; Arai, N.; Ueno, K.; Matsumoto, T.; Gotoh, N.; Adachi, K.; Kotaki, H.; Gotoh, Y.; Ishikawa, J.

2006-01-01

Mono-layered gold nanoparticles just below the surface of silicon oxide film have been formed by a gold negative-ion implantation at a very low-energy, where the deviation of implanted atoms was sufficiently narrow comparing to the size of nanoparticles. Gold negative ions were implanted into SiO2 thin films on Si substrate at energies of 35, 15 and 1 keV. The samples were annealed in Ar flow for 1 h at 900 or 1000 °C. Cross-sectional TEM observation for the implantation at 1 keV showed existence of Au nanoparticles aligned in the same depth of 5 nm from the surface. The nanoparticles had almost same diameter of 7 nm. The nanoparticles were found to be gold single crystal from a high-resolution TEM image.

Metal Ion Concentrations in Body Fluids after Implantation of Hip Replacements with Metal-on-Metal Bearing – Systematic Review of Clinical and Epidemiological Studies

PubMed Central

Hartmann, Albrecht; Hannemann, Franziska; Lützner, Jörg; Seidler, Andreas; Drexler, Hans; Günther, Klaus-Peter; Schmitt, Jochen

2013-01-01

Introduction The use of metal-on-metal (MoM) total hip arthroplasty (THA) increased in the last decades. A release of metal products (i.e. particles, ions, metallo-organic compounds) in these implants may cause local and/or systemic adverse reactions. Metal ion concentrations in body fluids are surrogate measures of metal exposure. Objective To systematically summarize and critically appraise published studies concerning metal ion concentrations after MoM THA. Methods Systematic review of clinical trials (RCTs) and epidemiological studies with assessment of metal ion levels (cobalt, chromium, titanium, nickel, molybdenum) in body fluids after implantation of metalliferous hip replacements. Systematic search in PubMed and Embase in January 2012 supplemented by hand search. Standardized abstraction of pre- and postoperative metal ion concentrations stratified by type of bearing (primary explanatory factor), patient characteristics as well as study quality characteristics (secondary explanatory factors). Results Overall, 104 studies (11 RCTs, 93 epidemiological studies) totaling 9.957 patients with measurement of metal ions in body fluids were identified and analyzed. Consistently, median metal ion concentrations were persistently elevated after implantation of MoM-bearings in all investigated mediums (whole blood, serum, plasma, erythrocytes, urine) irrespective of patient characteristics and study characteristics. In several studies very high serum cobalt concentrations above 50 µg/L were measured (detection limit typically 0.3 µg/L). Highest metal ion concentrations were observed after treatment with stemmed large-head MoM-implants and hip resurfacing arthroplasty. Discussion Due to the risk of local and systemic accumulation of metallic products after treatment with MoM-bearing, risk and benefits should be carefully balanced preoperatively. The authors support a proposed „time out“ for stemmed large-head MoM-THA and recommend a restricted indication for hip resurfacing arthroplasty. Patients with implanted MoM-bearing should receive regular and standardized monitoring of metal ion concentrations. Further research is indicated especially with regard to potential systemic reactions due to accumulation of metal products. PMID:23950923

Local and Systemic Changes Associated with Long-term, Percutaneous, Static Implantation of Titanium Alloys in Rhesus Macaques (Macaca mulatta)

PubMed Central

Frydman, Galit H; Marini, Robert P; Bakthavatchalu, Vasudevan; Biddle, Kathleen E; Muthupalani, Sureshkumar; Vanderburg, Charles R; Lai, Barry; Bendapudi, Pavan K; Tompkins, Ronald G; Fox, James G

2017-01-01

Metal alloys are frequently used as implant materials in veterinary medicine. Recent studies suggest that many alloys induce both local and systemic inflammatory responses. In this study, 37 rhesus macaques with long-term skull-anchored percutaneous titanium alloy implants (duration, 0 to 14 y) were evaluated for changes in their hematology, coagulation, and serum chemistry profiles. Negative controls (n = 28) did not have implants. Macaques with implants had higher plasma D-dimer and lower antithrombin III concentrations than nonimplanted animals. In addition, animals with implants had higher globulin and lower albumin and calcium concentrations compared with nonimplanted macaques. Many of these changes were positively correlated with duration of implantation and the number of implants. Chronic bacterial infection of the skin was present around many of the implant sites and within deeper tissues. Representative histopathology around the implant site of 2 macaques revealed chronic suppurative to pyogranulomatous inflammation extending from the skin to the dura mater. X-ray fluorescence microscopy of tissue biopsies from the implant site of the same 2 animals revealed significantly higher levels of free metal ions in the tissue, including titanium and iron. The higher levels of free metal ions persisted in the tissues for as long as 6 mo after explantation. These results suggest that long-term skull-anchored percutaneous titanium alloy implants can be associated with localized inflammation, chronic infection, and leaching of metal ions into local tissues. PMID:28381317

Ion radiation albedo effect: influence of surface roughness on ion implantation and sputtering of materials

NASA Astrophysics Data System (ADS)

Li, Yonggang; Yang, Yang; Short, Michael P.; Ding, Zejun; Zeng, Zhi; Li, Ju

2017-01-01

In fusion devices, ion retention and sputtering of materials are major concerns in the selection of compatible plasma-facing materials (PFMs), especially in the context of their microstructural conditions and surface morphologies. We demonstrate how surface roughness changes ion implantation and sputtering of materials under energetic ion irradiation. Using a new, sophisticated 3D Monte Carlo (MC) code, IM3D, and a random rough surface model, ion implantation and the sputtering yields of tungsten (W) with a surface roughness varying between 0-2 µm have been studied for irradiation by 0.1-1 keV D+, He+ and Ar+ ions. It is found that both ion backscattering and sputtering yields decrease with increasing roughness; this is hereafter called the ion radiation albedo effect. This effect is mainly dominated by the direct, line-of-sight deposition of a fraction of emitted atoms onto neighboring asperities. Backscattering and sputtering increase with more oblique irradiation angles. We propose a simple analytical formula to relate rough-surface and smooth-surface results.

Investigation of the stability of glass-ceramic composites containing CeTi 2 O 6 and CaZrTi 2 O 7 after ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paknahad, Elham; Grosvenor, Andrew P.

Glass-ceramic composite materials have been investigated for nuclear waste sequestration applications due to their ability to incorporate large amounts of radioactive waste elements. A key property that needs to be understood when developing nuclear waste sequestration materials is how the structure of the material responds to radioactive decay of nuclear waste elements, which can be simulated by high energy ion implantation. Borosilicate glass-ceramic composites containing brannerite-type (CeTi2O6) or zirconolite-type (CaZrTi2O7) oxides were synthesized at different annealing temperatures and investigated after being implanted with high-energy Au ions to mimic radiation induced structural damage. Backscattered electron (BSE) images were collected to investigatemore » the interaction of the brannerite crystallites with the glass matrix before and after implantation and showed that the morphology of the crystallites in the composite materials were not affected by radiation damage. Surface sensitive Ti K-edge glancing angle XANES spectra collected from the implanted composite materials showed that the structures of the CeTi2O6 and CaZrTi2O7 ceramics were damaged as a result of implantation; however, analysis of Si L2,3-edge XANES spectra indicated that the glass matrix was not affected by ion implantation.« less

Investigation of the stability of glass-ceramic composites containing CeTi2O6 and CaZrTi2O7 after ion implantation

NASA Astrophysics Data System (ADS)

Paknahad, Elham; Grosvenor, Andrew P.

2017-12-01

Glass-ceramic composite materials have been investigated for nuclear waste sequestration applications due to their ability to incorporate large amounts of radioactive waste elements. A key property that needs to be understood when developing nuclear waste sequestration materials is how the structure of the material responds to radioactive decay of nuclear waste elements, which can be simulated by high energy ion implantation. Borosilicate glass-ceramic composites containing brannerite-type (CeTi2O6) or zirconolite-type (CaZrTi2O7) oxides were synthesized at different annealing temperatures and investigated after being implanted with high-energy Au ions to mimic radiation induced structural damage. Backscattered electron (BSE) images were collected to investigate the interaction of the brannerite crystallites with the glass matrix before and after implantation and showed that the morphology of the crystallites in the composite materials were not affected by radiation damage. Surface sensitive Ti K-edge glancing angle XANES spectra collected from the implanted composite materials showed that the structures of the CeTi2O6 and CaZrTi2O7 ceramics were damaged as a result of implantation; however, analysis of Si L2,3-edge XANES spectra indicated that the glass matrix was not affected by ion implantation.

Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures.

PubMed

Nogales, E; Hidalgo, P; Lorenz, K; Méndez, B; Piqueras, J; Alves, E

2011-07-15

Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by a thermal evaporation method and were subsequently doped with gadolinium or europium ions by ion implantation. No significant changes in the morphologies of the nanostructures were observed after ion implantation and thermal annealing. The luminescence emission properties have been studied with cathodoluminescence (CL) in a scanning electron microscope (SEM). Both β-Ga(2)O(3) and GeO(2) structures implanted with Eu show the characteristic red luminescence peak centered at around 610 nm, due to the (5)D(0)-(7)F(2) Eu(3+) intraionic transition. Sharpening of the luminescence peaks after thermal annealing is observed in Eu implanted β-Ga(2)O(3), which is assigned to the lattice recovery. Gd(3+) as-implanted samples do not show rare earth related luminescence. After annealing, optical activation of Gd(3+) is obtained in both matrices and a sharp ultraviolet peak centered at around 315 nm, associated with the Gd(3+) (6)P(7/2)-(8)S(7/2) intraionic transition, is observed. The influence of the Gd ion implantation and the annealing temperature on the gallium oxide broad intrinsic defect band has been analyzed.

Methods of obtaining a uniform volume concentration of implanted ions

NASA Astrophysics Data System (ADS)

Reutov, V. F.

1998-05-01

Three simple practical methods of irradiation with high energy particles (>5 MeV/n), providing the conditions of obtaining a uniform volume concentration of the implanted ions in the massive samples are described in the present paper. Realization of the condition of two-sided irradiation of a plane sample during its rotation in the flux of the projectiles is the basis of the first method. The use of free air as a filter with varying absorbent ability due to the movement of the irradiated sample along ion beam brought to the atmosphere is at the basis of the second method of uniform ion alloying. The third method of obtaining a uniform volume concentration of the implanted ions in a massive sample consists of sample irradiation through the absorbent filter in the shape of a foil curved according to the parabolic law moving along its surface. The first method is the most effective for obtaining a great number of the samples, for mechanical tests, for example, the second one - for irradiation in different gaseous media, the third one - for obtaining high concentration of the implanted ions under controlled (regulated) thermal and deformation conditions.

Breeding of D(-)-lactic acid high producing strain by low-energy ion implantation and preliminary analysis of related metabolism.

PubMed

Xu, Ting-Ting; Bai, Zhong-Zhong; Wang, Li-Juan; He, Bing-Fang

2010-01-01

The low-energy nitrogen ion beam implantation technique was used in the breeding of mutant D(-)-lactic-acid-producing strains. The wild strain Sporolactobacillus sp. DX12 was mutated by an N(+) ion beam with energy of 10keV and doses ranging from 0.4 x 10(15) to 6.60 x 10(15) ions/cm(2). Combined with an efficient screening method, an efficient mutant Y2-8 was selected after two times N(+) ion beam implantation. By using the mutant Y2-8, 121.6g/l of D-lactic acid was produced with the molar yields of 162.1% to the glucose. The yield of D-lactic acid by strain Y2-8 was 198.8% higher than the wild strain. Determination of anaerobic metabolism by Biolog MT2 was used to analyze the activities of the concerned enzymes in the lactic acid metabolic pathway. The results showed that the activities of the key enzymes responded on the substrates such as 6-phosphofructokinase, pyruvate kinase, and D-lactate dehydrogenase were considerably higher in the mutants than the wild strain. These might be affected by ion beam implantation.

Au3+ ion implantation on FTO coated glasses: Effect on structural, electrical, optical and phonon properties

NASA Astrophysics Data System (ADS)

Sahu, Bindu; Dey, Ranajit; Bajpai, P. K.

2017-06-01

Effects of 11.00 MeV Au3+ ions implanted in FTO coated (thickness ≈300 nm) silicate glasses on structural, electrical optical and phonon behavior have been explored. It has been observed that metal clustering near the surface and sub-surface region below glass-FTO interface changes electrical and optical properties significantly. Ion implantation does not affect the crystalline structure of the coated films; however, the unit cell volume decreases with increase in fluence and the tetragonal distortion (c/a ratio) also decreases systematically in the implanted samples. The sheet resistivity of the films increases from 11 × 10-5 ohm-cm (in pristine) to 7.5 × 10-4 ohm-cm for highest ion beam fluence ≈1015 ions/cm2. The optical absorption decreases with increasing fluence whereas, the optical transmittance as well as reflectance increases with increasing fluence. The Raman spectra are observed at ∼530 cm-1 and ∼1103 cm-1 in pristine sample. The broad band at 530 cm-1 shifts towards higher wave number in the irradiated samples. This may be correlated with increased disorder and strain relaxation in the samples as a result of ion beam irradiation.

Thermal annealing behavior of hydrogen and surface topography of H 2 + ion implanted tungsten

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jiandong; Jiang, Weilin; Zhu, Zihua

2018-01-25

Tungsten (W) has been proposed as a plasma-facing material (PFM) in fusion reactors due to its outstanding properties. Degradation of the material properties is expected to occur as a result of hydrogen (H) isotope permeation and trapping in W. In this study, two polycrystalline W plates were implanted with 80 keV H 2 + ions to a fluence of 2E21 H+/m2 at room temperature (RT). Time-of-flight secondary ion mass spectrometry (ToF-SIMS), focused ion beam (FIB) and scanning electron microscopy (SEM) were used for sample characterization. The SIMS data shows that H atoms are distributed well beyond the ion projected range.more » Isochronal annealing appears to suggest two H release stages that might be associated with the reported activation energies. H release at RT was observed between days 10 and 70 following ion implantation, and the level was maintained over the next 60 days. In addition, FIB/SEM results exhibit H2 blister formation near the surface of the as-implanted W. The blister distribution remains unchanged after thermal annealing up to 600 °C.« less

Materials science education: ion beam modification and analysis of materials

NASA Astrophysics Data System (ADS)

Zimmerman, Robert; Muntele, Claudiu; Ila, Daryush

2012-08-01

The Center for Irradiation of Materials (CIM) at Alabama A&M University (http://cim.aamu.edu) was established in 1990 to serve the University in its research, education and services to the need of the local community and industry. CIM irradiation capabilities are oriented around two tandem-type ion accelerators with seven beam lines providing high-resolution Rutherford backscattering spectrometry, MeV focus ion beam, high-energy ion implantation and irradiation damage studies, particle-induced X-ray emission, particle-induced gamma emission and ion-induced nuclear reaction analysis in addition to fully automated ion channeling. One of the two tandem ion accelerators is designed to produce high-flux ion beam for MeV ion implantation and ion irradiation damage studies. The facility is well equipped with a variety of surface analysis systems, such as SEM, ESCA, as well as scanning micro-Raman analysis, UV-VIS Spectrometry, luminescence spectroscopy, thermal conductivity, electrical conductivity, IV/CV systems, mechanical test systems, AFM, FTIR, voltammetry analysis as well as low-energy implanters, ion beam-assisted deposition and MBE systems. In this presentation, we will demonstrate how the facility is used in material science education, as well as providing services to university, government and industry researches.

Tissue response to peritoneal implants

NASA Technical Reports Server (NTRS)

Picha, G. J.

1980-01-01

Peritoneal implants were fabricated from poly 2-OH, ethyl methacrylate (HEMA), polyetherurethane (polytetramethylene glycol 1000 MW, 1,4 methylene disocynate, and ethyl diamine), and untreated and sputter treated polytetrafluoroethylene (PTFE). The sputter treated PTFE implants were produced by an 8 cm diameter argon ion source. The treated samples consisted of ion beam sputter polished samples, sputter etched samples (to produce a microscopic surface cone texture) and surface pitted samples (produced by ion beam sputtering to result in 50 microns wide by 100 microns deep square pits). These materials were implanted in rats for periods ranging from 30 minutes to 14 days. The results were evaluated with regard to cell type and attachment kinetics onto the different materials. Scanning electron microscopy and histological sections were also evaluated. In general the smooth hydrophobic surfaces attracted less cells than the ion etched PTFE or the HEMA samples. The ion etching was observed to enhance cell attachment, multinucleated giant cell (MNGC) formation, cell to cell contact, and fibrous capsule formation. The cell responsed in the case of ion etched PTFE to an altered surface morphology. However, equally interesting was the similar attachment kinetics of HEMA verses the ion etched PTFE. However, HEMA resulted in a markedly different response with no MNGC's formation, minimal to no capsule formation, and sample coverage by a uniform cell layer.

Passivation of carbon steel through mercury implantation

NASA Technical Reports Server (NTRS)

Wilbur, P. J.; Robinson, R. S.

1981-01-01

An experiment, in which carbon steel samples were implanted with mercury ions from a broad beam ion source and their corrosion characteristics in air were evaluated, is described. Mercury doses of a few mA min/square cm at energies of a few hundred electron volts are shown to effect significant improvements in the corrosion resistance of the treated surfaces. In a warm moist environment the onset of rusting was extended from 15 min. for an untreated sample to approximately 30 hrs. for one implanted at a dose of 33 mA min/square cm with 1000 eV mercury ions.

Adaptation of ion beam technology to microfabrication of solid state devices and transducers

NASA Technical Reports Server (NTRS)

Topich, J. A.

1978-01-01

A number of areas were investigated to determine the potential uses of ion beam techniques in the construction of solid state devices and transducers and the packaging of implantable electronics for biomedical applications. The five areas investigated during the past year were: (1) diode-like devices fabricated on textured silicon; (2) a photolithographic technique for patterning ion beam sputtered PVC (polyvinyl chloride); (3) use of sputtered Teflon as a protective coating for implantable pressure sensors; (4) the sputtering of Macor to seal implantable hybrid circuits; and (5) the use of sputtered Teflon to immobilize enzymes.

Implantation of sodium ions into germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Korol', V. M., E-mail: vkorol@ctsnet.ru; Kudriavtsev, Yu.

The donor properties of Na atoms introduced by ion implantation into p-Ge with the resistivity 20-40 {Omega} cm are established for the first time. Na profiles implanted into Ge (the energies 70 and 77 keV and the doses (0.8, 3, 30) Multiplication-Sign 10{sup 14} cm{sup -2}) are studied. The doses and annealing temperatures at which the thermoprobe detects n-type conductivity on the sample surface are established. After implantation, the profiles exhibit an extended tail. The depth of the concentration maximum is in good agreement with the calculated mean projected range of Na ions R{sub p}. Annealing for 30 min atmore » temperatures of 250-700 Degree-Sign C brings about a redistribution of Na atoms with the formation of segregation peaks at a depth, which is dependent on the ion dose, and is accompanied by the diffusion of Na atoms to the surface with subsequent evaporation. After annealing at 700 Degree-Sign C less than 7% of the implanted ions remain in the matrix. The shape of the profile tail portions measured after annealing at temperatures 300-400 Degree-Sign C is indicative of the diffusion of a small fraction of Na atoms into the depth of the sample.« less

Optima HD Imax: Molecular Implant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tieger, D. R.; Splinter, P. R.; Hsieh, T. J.

2008-11-03

Molecular implantation offers semiconductor device manufacturers multiple advantages over traditional high current ion implanters. The dose multiplication due to implanting more than one atom per molecule and the transport of beams at higher energies relative to the effective particle energies result in significant throughput enhancements without risk of energy contamination. The Optima HD Imax is introduced with molecular implant capability and the ability to reach up to 4.2 keV effective {sup 11}B from octadecaborane (B{sub 18}H{sub 22}). The ion source and beamline are optimized for molecular species ionization and transport. The beamline is coupled to the Optima HD mechanically scannedmore » endstation. The use of spot beam technology with ionized molecules maximizes the throughput potential and produces uniform implants with fast setup time and with superior angle control. The implanter architecture is designed to run multiple molecular species; for example, in addition to B{sub 18}H{sub 22} the system is capable of implanting carbon molecules for strain engineering and shallow junction engineering. Source lifetime data and typical operating conditions are described both for high dose, memory applications such as dual poly gate as well as lower energy implants for source drain extension and contact implants. Throughputs have been achieved in excess of 50 wafers per hour at doses up to 1x10{sup 16} ions/cm{sup 2} and for energies as low as 1 keV.« less

Antimicrobial and bone-forming activity of a copper coated implant in a rabbit model.

PubMed

Prinz, Cornelia; Elhensheri, Mohamed; Rychly, Joachim; Neumann, Hans-Georg

2017-08-01

Current strategies in implant technology are directed to generate bioactive implants that are capable to activate the regenerative potential of the surrounding tissue. On the other hand, implant-related infections are a common problem in orthopaedic trauma patients. To meet both challenges, i.e. to generate a bone implant with regenerative and antimicrobial characteristics, we tested the use of copper coated nails for surgical fixation in a rabbit model. Copper acetate was galvanically deposited with a copper load of 1 µg/mm 2 onto a porous oxide layer of Ti6Al4V nails, which were used for the fixation of a tibia fracture, inoculated with bacteria. After implantation of the nail the concentration of copper ions did not increase in blood which indicates that copper released from the implant was locally restricted to the fracture site. After four weeks, analyses of the extracted implants revealed a distinct antimicrobial effect of copper, because copper completely prevented both a weak adhesion and firm attachment of biofilm-forming bacteria on the titanium implant. To evaluate fracture healing, radiographic examination demonstrated an increased callus index in animals with copper coated nails. This result indicates a stimulated bone formation by releasing copper ions. We conclude that the use of implants with a defined load of copper ions enables both prevention of bacterial infection and the stimulation of regenerative processes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Surodin, S. I., E-mail: surodin.bsn@mail.ru; Nikolitchev, D. E.; Kryukov, R. N.

The concentration profiles of species in silicon subjected to gallium and nitrogen co-implantation and subsequent annealing have been investigated by the method of X-ray photoelectron spectroscopy combined with the layer-by-layer ion etching of the implanted layer. It is shown that practically entire implanted gallium undergoes out-diffusion, but the preliminary implantation of nitrogen for the synthesis of a barrier SiN{sub x} layer makes it possible to avoid the essential loss of gallium. In this case, about 14 % of implanted gallium bond to nitrogen. The obtained data are discussed from the viewpoint of the possibility of ion synthesis of GaN inclusionsmore » in silicon matrix.« less

Amorphization and recrystallization of epitaxial ReSi2 films grown on Si(100)

NASA Technical Reports Server (NTRS)

Kim, Kun HO; Bai, G.; Nicolet, MARC-A.; Mahan, John E.; Geib, Kent M.

1991-01-01

The effects of implantation damage and the chemical species of the implant on structural and electrical properties of epitaxial ReSi2 films on Si(100) implanted with Si-28 or Ar-40 ions, at doses ranging from 10 to the 13th/sq cm to 10 to the 15th/sq cm, were investigated using the backscattering spectrometry, XRD, and the van der Pauw techniques. Results showed that ion implantation produces damage in the film, which increases monotonically with dose; the resistivity of the film decreases monotonically with dose.

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

NASA Astrophysics Data System (ADS)

Feigelson, B. N.; Anderson, T. J.; Abraham, M.; Freitas, J. A.; Hite, J. K.; Eddy, C. R.; Kub, F. J.

2012-07-01

No reliable results were reported up-to-date on electrical activation of Mg implanted GaN without co-doping with other ions. The main reason of the poor ion-implanted activation in GaN is lack of the adequate GaN annealing technique. We have developed a new approach, Multicycle Rapid Thermal Annealing to overcome this limitation and enable longer annealing times at high temperature. We have applied this new technique to Mg-implanted GaN, and demonstrated p-type conductivity.

Local and systemic changes associated with long-term, percutaneous, static implantation with titanium alloys in rhesus macaques (Macaca mulatta)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frydman, Galit F.; Marini, Robert P.; Bakthavatchalu, Vasudevan

Metal alloys are frequently used as implant materials in veterinary medicine. Recent studies suggest that many types of metal alloys may induce both local and systemic inflammatory responses. In this study, 37 rhesus macaques with long-term skull-anchored percutaneous titanium alloy implants (0-14 years duration) were evaluated for changes in their hematology, coagulation and serum chemistry profiles. Negative controls (n=28) did not have implants. All of the implanted animals were on IACUC-approved protocols and were not implanted for the purpose of this study. Animals with implants had significantly higher plasma D-dimer and lower antithrombin III concentrations compared with nonimplanted animals (p-valuesmore » < 0.05). Additionally, animals with implants had significantly higher globulin, and lower albumin and calcium concentrations compared with nonimplanted animals (p-values < 0.05). Many of these changes were positively correlated with duration of implantation as well as the number of implants. Chronic bacterial infection was observed on the skin around many of the implant sites, and within deeper tissues. Representative histopathology around the implant site of two implanted animals revealed chronic suppurative to pyogranulomatous inflammation extending from the skin to the dura mater. X-ray fluorescence microscopy of tissue biopsies from the implant site of the same two animals revealed significant increases in free metal ions within the tissue, including titanium and iron. Free metal ions persisted in the tissues up to 6 months postexplant. These results suggest that long-term skull-anchored percutaneous titanium alloy implants results in localized inflammation, chronic infection, and leaching of metal ions into local tissues.« less

The Development and Fabrication of an Implantable, Multiplexed, Semiconductor Multielectrode Array.

DTIC Science & Technology

1983-12-01

ILt D. C. Denton . Their individual and collective efforts in designing, fabricating, and testing an implantable array resulted in a semiconductor device... contaminating sodium ions were attracted by the electrical field developed by the JFET pinch-off voltage. These sodium ions produced leakage paths...34 was implanted in a biological specimen (dog) by Hensley and Denton (Ref 5). Summary of Current Knowledge Hensley and Denton showed the feasibility

The Use of Ion Implantation for Materials Processing.

DTIC Science & Technology

1986-03-06

34 ASME, J. Lub. Technology 105, pp. 534-541 (1983). 89. J. M. Lambert, P. A. Treado, D . Trbojevic , R. G. Allas, A. R. Knudson, G. W. Reynolds, and F. R...Singer and R.G. Vardiman D . In Situ Auger Analysis Of Surface Composition During High Fluence Ion Implantation...Niobium Implantation Of Iron Films ..............................................37 B. D . Sartwell and D.A. Baldwin F. Sputtering And Migration During Ta

Pulsed Excimer Laser Processing for Cost-Effective Solar Cells

NASA Technical Reports Server (NTRS)

Wong, D.

1985-01-01

Residual lattice damage by 5 keV ion implantation and surface flaws induced by wafer cleaning are proven to affect the V sub oc more adversely for laser annealed cells than conventional thermal diffusion. However, an alternative, molecular implantation of molecular species holds potential. The first experimental results are encouraging. The lack of a commercially available mass analyzed implantation with low energy, high fluence ions is constraining.

Nonlinear effects in defect production by atomic and molecular ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

David, C., E-mail: david@igcar.gov.in; Dholakia, Manan; Chandra, Sharat

This report deals with studies concerning vacancy related defects created in silicon due to implantation of 200 keV per atom aluminium and its molecular ions up to a plurality of 4. The depth profiles of vacancy defects in samples in their as implanted condition are carried out by Doppler broadening spectroscopy using low energy positron beams. In contrast to studies in the literature reporting a progressive increase in damage with plurality, implantation of aluminium atomic and molecular ions up to Al{sub 3}, resulted in production of similar concentration of vacancy defects. However, a drastic increase in vacancy defects is observed duemore » to Al{sub 4} implantation. The observed behavioural trend with respect to plurality has even translated to the number of vacancies locked in vacancy clusters, as determined through gold labelling experiments. The impact of aluminium atomic and molecular ions simulated using MD showed a monotonic increase in production of vacancy defects for cluster sizes up to 4. The trend in damage production with plurality has been explained on the basis of a defect evolution scheme in which for medium defect concentrations, there is a saturation of the as-implanted damage and an increase for higher defect concentrations.« less

Ag implantation-induced modification of Ni-Ti shape memory alloy thin films

NASA Astrophysics Data System (ADS)

Kumar, V.; Singhal, R.; Vishnoi, R.; Banerjee, M. K.; Sharma, M. C.; Asokan, K.; Kumar, M.

2017-08-01

Nanocrystalline thin films of Ni-Ti shape memory alloy are deposited on an Si substrate by the DC-magnetron co-sputtering technique and 120 keV Ag ions are implanted at different fluences. The thickness and composition of the pristine films are determined by Rutherford Backscattering Spectrometry (RBS). X-Ray diffraction (XRD), atomic force microscopy (AFM) and four-point probe resistivity methods have been used to study the structural, morphological and electrical transport properties. XRD analysis has revealed the existence of martensitic and austenite phases in the pristine film and also evidenced the structural changes in Ag-implanted Ni-Ti films at different fluences. AFM studies have revealed that surface roughness and grain size of Ni-Ti films have decreased with an increase in ion fluence. The modifications in the mechanical behaviour of implanted Ni-Ti films w.r.t pristine film is determined by using a Nano-indentation tester at room temperature. Higher hardness and the ratio of higher hardness (H) to elastic modulus (Er) are observed for the film implanted at an optimized fluence of 9 × 1015 ions/cm2. This improvement in mechanical behaviour could be understood in terms of grain refinement and dislocation induced by the Ag ion implantation in the Ni-Ti thin films.

P-type doping of GaN(000\\bar{1}) by magnesium ion implantation

NASA Astrophysics Data System (ADS)

Narita, Tetsuo; Kachi, Tetsu; Kataoka, Keita; Uesugi, Tsutomu

2017-01-01

Magnesium ion implantation has been performed on a GaN(000\\bar{1}) substrate, whose surface has a high thermal stability, thus allowing postimplantation annealing without the use of a protective layer. The current-voltage characteristics of p-n diodes fabricated on GaN(000\\bar{1}) showed distinct rectification at a turn-on voltage of about 3 V, although the leakage current varied widely among the diodes. Coimplantation with magnesium and hydrogen ions effectively suppressed the leakage currents and device-to-device variations. In addition, an electroluminescence band was observed at wavelengths shorter than 450 nm for these diodes. These results provide strong evidence that implanted magnesium ions create acceptors in GaN(000\\bar{1}).

The gradient structure of the NiTi surface layers subjected to tantalum ion beam alloying

NASA Astrophysics Data System (ADS)

Girsova, S. L.; Poletika, T. M.; Meisner, L. L.; Schmidt, E. Yu

2017-05-01

The NiTi shape memory alloy has been modified by ion implantation with Ta to improve the surface and biological properties. The elemental and phase composition and structure of the surface and near-surface layers of NiTi specimens after the Ta ion implantation with the fluency D = 3 × 1017 cm-2 and D = 6 × 1017 cm-2 are examined. The methods of Auger electron spectroscopy (AES), transmission electron microscopy (TEM), and electron dispersion analysis (EDS) are used. It is found that a nonuniform distribution of elements along the depth of the surface layer after the ion implantation of NiTi specimens, regardless of the regime, is accompanied by the formation of a number of sublayer structures.

Enhanced retained dose uniformity in NiTi spinal correction rod treated by three-dimensional mesh-assisted nitrogen plasma immersion ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Q. Y.; Hu, T.; Kwok, Dixon T. K.

2010-05-15

Owing to the nonconformal plasma sheath in plasma immersion ion implantation of a rod sample, the retained dose can vary significantly. The authors propose to improve the implant uniformity by introducing a metal mesh. The depth profiles obtained with and without the mesh are compared and the implantation temperature at various locations is evaluated indirectly by differential scanning calorimeter. Our results reveal that by using the metal mesh, the retained dose uniformity along the length is greatly improved and the effects of the implantation temperature on the localized mechanical properties of the implanted NiTi shape memory alloy rod are nearlymore » negligible.« less

P-type doping of GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wong, Raechelle Kimberly

2000-04-01

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C.more » The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.« less

Oxygen redox chemistry without excess alkali-metal ions in Na2/3[Mg0.28Mn0.72]O2.

PubMed

Maitra, Urmimala; House, Robert A; Somerville, James W; Tapia-Ruiz, Nuria; Lozano, Juan G; Guerrini, Niccoló; Hao, Rong; Luo, Kun; Jin, Liyu; Pérez-Osorio, Miguel A; Massel, Felix; Pickup, David M; Ramos, Silvia; Lu, Xingye; McNally, Daniel E; Chadwick, Alan V; Giustino, Feliciano; Schmitt, Thorsten; Duda, Laurent C; Roberts, Matthew R; Bruce, Peter G

2018-03-01

The search for improved energy-storage materials has revealed Li- and Na-rich intercalation compounds as promising high-capacity cathodes. They exhibit capacities in excess of what would be expected from alkali-ion removal/reinsertion and charge compensation by transition-metal (TM) ions. The additional capacity is provided through charge compensation by oxygen redox chemistry and some oxygen loss. It has been reported previously that oxygen redox occurs in O 2p orbitals that interact with alkali ions in the TM and alkali-ion layers (that is, oxygen redox occurs in compounds containing Li + -O(2p)-Li + interactions). Na 2/3 [Mg 0.28 Mn 0.72 ]O 2 exhibits an excess capacity and here we show that this is caused by oxygen redox, even though Mg 2+ resides in the TM layers rather than alkali-metal (AM) ions, which demonstrates that excess AM ions are not required to activate oxygen redox. We also show that, unlike the alkali-rich compounds, Na 2/3 [Mg 0.28 Mn 0.72 ]O 2 does not lose oxygen. The extraction of alkali ions from the alkali and TM layers in the alkali-rich compounds results in severely underbonded oxygen, which promotes oxygen loss, whereas Mg 2+ remains in Na 2/3 [Mg 0.28 Mn 0.72 ]O 2 , which stabilizes oxygen.

Oxygen redox chemistry without excess alkali-metal ions in Na2/3[Mg0.28Mn0.72]O2

NASA Astrophysics Data System (ADS)

Maitra, Urmimala; House, Robert A.; Somerville, James W.; Tapia-Ruiz, Nuria; Lozano, Juan G.; Guerrini, Niccoló; Hao, Rong; Luo, Kun; Jin, Liyu; Pérez-Osorio, Miguel A.; Massel, Felix; Pickup, David M.; Ramos, Silvia; Lu, Xingye; McNally, Daniel E.; Chadwick, Alan V.; Giustino, Feliciano; Schmitt, Thorsten; Duda, Laurent C.; Roberts, Matthew R.; Bruce, Peter G.

2018-03-01

The search for improved energy-storage materials has revealed Li- and Na-rich intercalation compounds as promising high-capacity cathodes. They exhibit capacities in excess of what would be expected from alkali-ion removal/reinsertion and charge compensation by transition-metal (TM) ions. The additional capacity is provided through charge compensation by oxygen redox chemistry and some oxygen loss. It has been reported previously that oxygen redox occurs in O 2p orbitals that interact with alkali ions in the TM and alkali-ion layers (that is, oxygen redox occurs in compounds containing Li+-O(2p)-Li+ interactions). Na2/3[Mg0.28Mn0.72]O2 exhibits an excess capacity and here we show that this is caused by oxygen redox, even though Mg2+ resides in the TM layers rather than alkali-metal (AM) ions, which demonstrates that excess AM ions are not required to activate oxygen redox. We also show that, unlike the alkali-rich compounds, Na2/3[Mg0.28Mn0.72]O2 does not lose oxygen. The extraction of alkali ions from the alkali and TM layers in the alkali-rich compounds results in severely underbonded oxygen, which promotes oxygen loss, whereas Mg2+ remains in Na2/3[Mg0.28Mn0.72]O2, which stabilizes oxygen.

The use of an ion-beam source to alter the surface morphology of biological implant materials

NASA Technical Reports Server (NTRS)

Weigand, A. J.

1978-01-01

An electron bombardment, ion thruster was used as a neutralized-ion beam sputtering source to texture the surfaces of biological implant materials. Scanning electron microscopy was used to determine surface morphology changes of all materials after ion-texturing. Electron spectroscopy for chemical analysis was used to determine the effects of ion texturing on the surface chemical composition of some polymers. Liquid contact angle data were obtained for ion textured and untextured polymer samples. Results of tensile and fatigue tests of ion-textured metal alloys are presented. Preliminary data of tissue response to ion textured surfaces of some metals, polytetrafluoroethylene, alumina, and segmented polyurethane were obtained.

Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers

NASA Astrophysics Data System (ADS)

Okuyama, Ryosuke; Masada, Ayumi; Shigematsu, Satoshi; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Okuda, Hidehiko; Kurita, Kazunari

2018-01-01

Carbon-cluster-ion-implanted defects were investigated by high-resolution cross-sectional transmission electron microscopy toward achieving high-performance CMOS image sensors. We revealed that implantation damage formation in the silicon wafer bulk significantly differs between carbon-cluster and monomer ions after implantation. After epitaxial growth, small and large defects were observed in the implanted region of carbon clusters. The electron diffraction pattern of both small and large defects exhibits that from bulk crystalline silicon in the implanted region. On the one hand, we assumed that the silicon carbide structure was not formed in the implanted region, and small defects formed because of the complex of carbon and interstitial silicon. On the other hand, large defects were hypothesized to originate from the recrystallization of the amorphous layer formed by high-dose carbon-cluster implantation. These defects are considered to contribute to the powerful gettering capability required for high-performance CMOS image sensors.

Evaluation of ion-implanted-silicon detectors for use in intraoperative positron-sensitive probes.

PubMed

Raylman, R R; Wahl, R L

1996-11-01

The continuing development of probes for use with beta (positron and electron) emitting radionuclides may result in more complete excision of tracer-avid tumors. Perhaps one of the most promising radiopharmaceuticals for this task is 18F-labeled-Fluoro-2-Deoxy-D-Glucose (FDG). This positron-emitting agent has been demonstrated to be avidly and rapidly absorbed by many human cancers. We have investigated the use of ion-implanted-silicon detectors in intraoperative positron-sensitive surgical probes for use with FDG. These detectors possess very high positron detection efficiency, while the efficiency for 511 keV photon detection is low. The spatial resolution, as well as positron and annihilation photon detection sensitivity, of an ion-implanted-silicon detector used with 18F was measured at several energy thresholds. In addition, the ability of the device to detect the presence of relatively small amounts of FDG during surgery was evaluated by simulating a surgical field in which some tumor was left intact following lesion excision. The performance of the ion-implanted-silicon detector was compared to the operating characteristics of a positron-sensitive surgical probe which utilizes plastic scintillator. In all areas of performance the ion-implanted-silicon detector proved superior to the plastic scintillator-based probe. At an energy threshold of 14 keV positron sensitivity measured for the ion-implanted-silicon detector was 101.3 cps/kBq, photon sensitivity was 7.4 cps/kBq. In addition, spatial resolution was found to be relatively unaffected by the presence of distant sources of annihilation photon flux. Finally, the detector was demonstrated to be able to localize small amounts of FDG in a simulated tumor bed; indicating that this device has promise as a probe to aid in FDG-guided surgery.

High-fluence ion implantation in silicon carbide for fabrication of a compliant substrate

NASA Astrophysics Data System (ADS)

Lioubtchenko, Mikhail

GaN and related nitrides are promising materials for applications as UV/blue light emitters and in high-power, high-temperature electonic devices. Unfortunately, the vast potential of these materials cannot be realized effectively due to a large density of threading dislocations, arising from large lattice mismatch between GaN and utilized substrates. Therefore, a new approach to the heteroepitaxial growth is desirable, and a compliant substrate might help to remedy the situation. A modified model for the compliant substrate consisting of the compliant membrane glued to a thick handling substrate by a soft layer was proposed. We have chosen 6H-SiC as a starting substrate and ion implantation as a means of creating a buried layer. High fluence ion implantation of different species in 6H-SiC was performed at elevated temperatures and damage removal/accumulation was studied. It was found that temperatures around 1600°C are necessary to successfully recrystallize the radiation damage for Ti, Ga, Si and C implantations, but no damage removal was monitored for In implantation. In order to minimize the damage produced during ion implantation, it was decided to employ a multistep process in which each implantation step was followed by annealing. This approach was realized for 125 keV Ti++ and 300 keV Ga+ implantations up to a total dose of 1.8 x 1017 cm--2. Ti-implanted substrates were shown to retain good quality in the top layer, whereas Ga implantation preserves the quality of the near-surface region only at lower doses. The implanted species concentration was monitored after each step using Rutherford Backscattering (RBS). GaN films were grown on the prepared substrates and a control SiC sample by MOCVD. TEM and photoluminescence measurements have demonstrated that the quality of GaN films improves upon growth on compliant substrates.

Origin of magnetic properties in carbon implanted ZnO nanowires.

PubMed

Wang, Y F; Shao, Y C; Hsieh, S H; Chang, Y K; Yeh, P H; Hsueh, H C; Chiou, J W; Wang, H T; Ray, S C; Tsai, H M; Pao, C W; Chen, C H; Lin, H J; Lee, J F; Wu, C T; Wu, J J; Chang, Y M; Asokan, K; Chae, K H; Ohigashi, T; Takagi, Y; Yokoyama, T; Kosugi, N; Pong, W F

2018-05-17

Various synchrotron radiation-based spectroscopic and microscopic techniques are used to elucidate the room-temperature ferromagnetism of carbon-doped ZnO-nanowires (ZnO-C:NW) via a mild C + ion implantation method. The photoluminescence and magnetic hysteresis loops reveal that the implantation of C reduces the number of intrinsic surface defects and increases the saturated magnetization of ZnO-NW. The interstitial implanted C ions constitute the majority of defects in ZnO-C:NW as confirmed by the X-ray absorption spectroscopic studies. The X-ray magnetic circular dichroism spectra of O and C K-edge respectively indicate there is a reduction in the number of unpaired/dangling O 2p bonds in the surface region of ZnO-C:NW and the C 2p-derived states of the implanted C ions strongly affect the net spin polarization in the surface and bulk regions of ZnO-C:NW. Furthermore, these findings corroborate well with the first-principles calculations of C-implanted ZnO in surface and bulk regions, which highlight the stability of implanted C for the suppression and enhancement of the ferromagnetism of the ZnO-C:NW in the surface region and bulk phase, respectively.

Design of a nitrogen-implanted titanium-based superelastic alloy with optimized properties for biomedical applications.

PubMed

Gordin, D M; Busardo, D; Cimpean, A; Vasilescu, C; Höche, D; Drob, S I; Mitran, V; Cornen, M; Gloriant, T

2013-10-01

In this study, a superelastic Ni-free Ti-based biomedical alloy was treated in surface by the implantation of nitrogen ions for the first time. The N-implanted surface was characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and secondary ion mass spectroscopy, and the superficial mechanical properties were evaluated by nano-indentation and by ball-on-disk tribological tests. To investigate the biocompatibility, the corrosion resistance of the N-implanted Ti alloy was evaluated in simulated body fluids (SBF) complemented by in-vitro cytocompatibility tests on human fetal osteoblasts. After implantation, surface analysis methods revealed the formation of a titanium-based nitride on the substrate surface. Consequently, an increase in superficial hardness and a significant reduction of friction coefficient were observed compared to the non-implanted sample. Also, a better corrosion resistance and a significant decrease in ion release rates have been obtained. Cell culture experiments indicated that the cytocompatibility of the N-implanted Ti alloy was superior to that of the corresponding non-treated sample. Thus, this new functional N-implanted titanium-based superelastic alloy presents the optimized properties that are required for various medical devices: superelasticity, high superficial mechanical properties, high corrosion resistance and excellent cytocompatibility. Copyright © 2013 Elsevier B.V. All rights reserved.

Rapid pulse annealing of CdZnTe detectors for reducing electronic noise

DOE Office of Scientific and Technical Information (OSTI.GOV)

Voss, Lars; Conway, Adam; Nelson, Art

A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of .about.0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface;more » and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.« less

Atypical self-activation of Ga dopant for Ge nanowire devices.

PubMed

Zeiner, Clemens; Lugstein, Alois; Burchhart, Thomas; Pongratz, Peter; Connell, Justin G; Lauhon, Lincoln J; Bertagnolli, Emmerich

2011-08-10

In this Letter we report the atypical self-activation of gallium (Ga) implanted by focused ion beam (FIB) into germanium nanowires (Ge-NWs). By FIB implantation of 30 keV Ga(+) ions at room temperature, the Ge-NW conductivity increases up to 3 orders of magnitude with increasing ion fluence. Cu(3)Ge heterostructures were formed by diffusion to ensure well-defined contacts to the NW and enable two point I/V measurements. Additional four point measurements prove that the conductivity enhancement emerges from the modification of the wires themselves and not from contact property modifications. The Ga distribution in the implanted Ge-NWs was measured using atom probe tomography. For high ion fluences, and beginning amorphization of the NWs, the conductivity decreases exponentially. Temperature dependent conductivity measurements show strong evidence for an in situ doping of the Ge-NWs without any further annealing. Finally the feasibility of improving the device performance of top-gated Ge-NW MOSFETs by FIB implantation was shown.

Use of low energy hydrogen ion implants in high efficiency crystalline silicon solar cells

NASA Technical Reports Server (NTRS)

Fonash, S. J.; Singh, R.

1985-01-01

This program is a study of the use of low energy hydrogen ion implantation for high efficiency crystalline silicon solar cells. The first quarterly report focuses on two tasks of this program: (1) an examination of the effects of low energy hydrogen implants on surface recombination speed; and (2) an examination of the effects of hydrogen on silicon regrowth and diffusion in silicon. The first part of the project focussed on the measurement of surface properties of hydrogen implanted silicon. Low energy hydrogen ions when bombarded on the silicon surface will create structural damage at the surface, deactivate dopants and introduce recombination centers. At the same time the electrically active centers such as dangling bonds will be passivated by these hydrogen ions. Thus hydrogen is expected to alter properties such as the surface recombination velocity, dopant profiles on the emitter, etc. In this report the surface recombination velocity of a hydrogen emplanted emitter was measured.

Electron microscopy and positron annihilation study of CdSe nanoclusters embedded in MgO

NASA Astrophysics Data System (ADS)

van Huis, M. A.; van Veen, A.; Schut, H.; Eijt, S. W. H.; Kooi, B. J.; De Hosson, J. Th. M.

2004-06-01

CdSe nanoclusters are created in MgO by means of co-implantation of 280 keV, 1 × 10 16 Cd ions cm -2 and 210 keV, 1 × 10 16 Se ions cm -2 in single crystals of MgO(0 0 1) and subsequent thermal annealing at a temperature of 1300 K. The structural properties and the orientation relationship between the CdSe and the MgO are investigated using cross-sectional transmission electron microscopy (XTEM). The crystal structure of the nanoclusters depends on their size. The smallest nanoclusters with a size below 5 nm have the cubic rocksalt crystal structure. The larger nanoclusters have a different (most likely the cubic sphalerite) crystal structure. The defect evolution in the sample after ion implantation and during thermal annealing is investigated using Doppler broadening positron beam analysis (PBA). The defect evolution in samples co-implanted with Cd and Se is compared to the defect evolution in samples implanted with only Cd or only Se ions.

Synthesis of Ag metallic nanoparticles by 120 keV Ag- ion implantation in TiO2 matrix

NASA Astrophysics Data System (ADS)

Sharma, Himanshu; Singhal, Rahul

2017-12-01

TiO2 thin film synthesized by the RF sputtering method has been implanted by 120 keV Ag- ion with different doses (3 × 1014, 1 × 1015, 3 × 1015, 1 × 1016 and 3 × 1016 ions/cm2). Further, these were characterized by Rutherford back Scattering, XRD, X-ray photoelectron spectroscopy (XPS), UV-visible and fluorescence spectroscopy. Here we reported that after implantation, localized surface Plasmon resonance has been observed for the fluence 3 × 1016 ions/cm2, which was due to the formation of silver nanoparticles. Ag is in metallic form in the matrix of TiO2, which is very interestingly as oxidation of Ag was reported after implantation. Also, we have observed the interaction between nanoparticles of Ag and TiO2, which results in an increasing intensity in lower charge states (Ti3+) of Ti. This interaction is supported by XPS and fluorescence spectroscopy, which can help improve photo catalysis and antibacterial properties.

The Synergistic Effect of Proteins and Reactive Oxygen Species on Electrochemical Behaviour of 316L Stainless Steel for Biomedical Applications

NASA Astrophysics Data System (ADS)

Simionescu, N.; Benea, L.; Dumitrascu, V. M.

2018-06-01

The stainless steels, especially 316L type is the most used metallic biomaterials for biomedical applications due to their good biocompatibility, low price, excellent corrosion resistance, availability, easy processing and high strength. Due to these favorable properties 316L stainless steel has become the most attractive biomaterial for dental implants, stents and orthopedic implants. However an implant material in the human body is exposed to an action effect of other molecules, including proteins (such as albumin) and reactive oxygen species (such as hydrogen peroxide - H2O2 ) produced by bacteria and immune cells. In the literature there are few studies to follow the effect of proteins and reactive oxygen species on 316L stainless steel used as implant material and are still unclear. The degree of corrosion resistance is the first criterion in the use of a metallic biomaterial in the oral or body environment. The aim of this research work is to investigate the influence of proteins (albumin) and reactive oxygen species (H2O2 ) in combination, taking into account the synergistic effect of these two factors on 316L stainless steel. Albumin is present in the body near implants and reactive oxygen species could appear in inflammatory processes as well. The study shows that the presence of albumin and reactive species influences the corrosion resistance of 316L stainless steel in biological solutions. In this research work the corrosion behavior of 316L stainless steel is analyzed by electrochemical methods such as: open circuit potential (OCP), Electrochemical Impedance Spectroscopy (EIS). It was found that, the electrochemical results are in a good agreement with micro photographs taken before and after corrosion assays. The albumin and reactive oxygen species have influence on 316L stainless steel behavior.

More-reliable SOS ion implantations

NASA Technical Reports Server (NTRS)

Woo, D. S.

1980-01-01

Conducting layer prevents static charges from accumulating during implantation of silicon-on-sapphire MOS structures. Either thick conducting film or thinner film transparent to ions is deposited prior to implantation, and gaps are etched in regions to be doped. Grounding path eliminates charge flow that damages film or cracks sapphire wafer. Prevention of charge buildup by simultaneously exposing structure to opposite charges requires equipment modifications less practical and more expensive than deposition of conducting layer.

An angle-resolved, wavelength-dispersive x-ray fluorescence spectrometer for depth profile analysis of ion-implanted semiconductors using synchrotron radiation

NASA Astrophysics Data System (ADS)

Schmitt, W.; Hormes, J.; Kuetgens, U.; Gries, W. H.

1992-01-01

An apparatus for angle-resolved, wavelength-dispersive x-ray fluorescence spectroscopy with synchrotron radiation has been built and tested at the beam line BN2 of the Bonn electron stretcher and accelerator (ELSA). The apparatus is to be used for nondestructive depth profile analysis of ion-implanted semiconductors as part of the multinational Versailles Project of Advanced Materials and Standards (VAMAS) project on ion-implanted reference materials. In particular, the centroid depths of depth profiles of various implants is to be determined by use of the angle-resolved signal ratio technique. First results of measurements on implants of phosphorus (100 keV, 1016 cm-2) and sulfur (200 keV, 1014 cm-2) in silicon wafers using ``white'' synchrotron radiation are presented and suggest that it should be generally possible to measure the centroid depth of an implant at dose densities as low as 1014 cm-2. Some of the apparative and technical requirements are discussed which are peculiar to the use of synchrotron radiation in general and to the use of nonmonochromatized radiation in particular.

Ion implantation damage, annealing and dopant activation in epitaxial gallium nitride

NASA Astrophysics Data System (ADS)

Suvkhanov, Agajan

2001-07-01

Successful n- and p-doping of GaN is an extremely important technological problem. More recently, ion implantation has been used to achieve both n- and p-type GaN. The ion implantation process is accompanied by the presence of radiation defects as the result of the ion-solid interactions. The temperatures (above 1000°C) required for recovery of the implantation induced damage and dopant activation strongly affect the GaN's surface integrity due to the significant nitrogen vapor pressure. Preservation of the surface integrity of GaN during high temperature post-implantation annealing is one of the key issues in the fabrication of GaN-based light-emitting devices. The radiation damage build-up in the implanted GaN layers has been investigated as a function of ion dose and the substrate's temperature. Results of measurements of structural damage by the Rutherford backscattering/Channeling (RBS/C) and the spectroscopic ellipsometry (SE) techniques have demonstrated the complex nature of the damage build-up. Analysis of GaN implanted at high temperature has demonstrated the presence of competing processes of layer-by-layer damage build-up and defect annihilation. Using a capping layer and annealing in a sealed quartz capsule filled with dry nitrogen can preserve the integrity of the GaN's surface. In this work the ion-implanted GaN samples were capped with 40 run MOCVD (Metal Organic Chemical Vapor Deposition) grown AlN film prior to annealing. The results of this work showed the advantage of high-temperature annealing of implanted GaN in a quartz capsule with nitrogen ambient, as compared with annealing in argon and nitrogen gas flow. Partial to complete decomposition of the AlN cap and underlying GaN has been observed by RBS/C and SEM (Scanning electron microscopy) for the samples annealed in flowing argon, as well as for the samples processed in flowing nitrogen. Encapsulation with nitrogen overpressure prevented the decomposition of the AlN capping film and the GaN crystal, and made it possible to achieve optical activation of the implanted Mg + and Si+ ions. PL measurements at 16 K of GaN samples implanted with Mg+ and annealed in a capsule showed three relatively strong peaks at 211, 303, and 395 meV from the band-edge emission. The relative intensity of the "yellow" band emission (i.e. defect band) was several times lower in the case of annealing in a sealed capsule as compared to that of open anneals in flowing argon or nitrogen. A separate set of specially-grown GaN samples was used for low temperature (1.8 K) PL analysis of the activation properties of Mg+-implanted and Mg+/P+-implanted samples. The samples were annealed in Rapid thermal processor (RTP) at 1300°C for 10 s with AlON encapsulation in flowing N2. The Mg+ implants showed good optical activation, producing a dose-correlated acceptor bound exciton peak with 12.2 meV localization energy, and donor-to-acceptor and band-to-acceptor peaks at 3.270 and 3.284 eV, respectively. The spectroscopic Mg acceptor binding energy was found to be 224 meV. A broad peak at 2.35 eV is attributed to implantation-induced defects stable in p-type material.

Stress influenced trapping processes in Si based multi-quantum well structures and heavy ions implanted Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ciurea, Magdalena Lidia, E-mail: ciurea@infim.ro; Lazanu, Sorina, E-mail: ciurea@infim.ro

2014-10-06

Multi-quantum well structures and Si wafers implanted with heavy iodine and bismuth ions are studied in order to evaluate the influence of stress on the parameters of trapping centers. The experimental method of thermostimullatedcurrents without applied bias is used, and the trapping centers are filled by illumination. By modeling the discharge curves, we found in multilayered structures the parameters of both 'normal' traps and 'stress-induced' ones, the last having a Gaussian-shaped temperature dependence of the cross section. The stress field due to the presence of stopped heavy ions implanted into Si was modeled by a permanent electric field. The increasemore » of the strain from the neighborhood of I ions to the neighborhood of Bi ions produces the broadening of some energy levels and also a temperature dependence of the cross sections for all levels.« less

Stress influenced trapping processes in Si based multi-quantum well structures and heavy ions implanted Si

NASA Astrophysics Data System (ADS)

Ciurea, Magdalena Lidia; Lazanu, Sorina

2014-10-01

Multi-quantum well structures and Si wafers implanted with heavy iodine and bismuth ions are studied in order to evaluate the influence of stress on the parameters of trapping centers. The experimental method of thermostimullatedcurrents without applied bias is used, and the trapping centers are filled by illumination. By modeling the discharge curves, we found in multilayered structures the parameters of both 'normal' traps and 'stress-induced' ones, the last having a Gaussian-shaped temperature dependence of the cross section. The stress field due to the presence of stopped heavy ions implanted into Si was modeled by a permanent electric field. The increase of the strain from the neighborhood of I ions to the neighborhood of Bi ions produces the broadening of some energy levels and also a temperature dependence of the cross sections for all levels.

Methods for Incorporating Oxygen-Generating Biomaterials into Cell Culture and Microcapsule Systems.

PubMed

McQuilling, John Patrick; Opara, Emmanuel C

2017-01-01

A major obstacle to long-term performance of tissue construct implants in regenerative medicine is the inherent hypoxia to which cells in the engineered construct are exposed prior to vascularization of the implant. Various approaches are currently being designed to address this problem. An emerging area of interest on this issue is the use of peroxide-based materials to generate oxygen during the critical period of extended hypoxia that occurs from the time cells are in culture waiting to be used in tissue engineering devices through the immediate post-implant period. In this chapter we provide protocols that we have developed for using these chemical oxygen generators in cell culture and tissue constructs as illustrated by pancreatic islet cell microencapsulation.

Cosmic ion bombardment of the icy moons of Jupiter

NASA Astrophysics Data System (ADS)

Strazzulla, G.

2011-05-01

A large number of experiments have been performed in many laboratories in the world with the aim to investigate the physico-chemical effects induced by fast ions irradiating astrophysical relevant materials. The laboratory in Catania (Italy) has given a contribution to some experimental works. In this paper I review the results of two class of experiments performed by the Catania group, namely implantation of reactive (H+, C+, N+, O+ and S+) ions in ices and the ion irradiation induced synthesis of molecules at the interface between water ice and carbonaceous or sulfurous solid materials. The results, discussed in the light of some questions concerning the surfaces of the Galilean moons, contribute to understand whether minor molecular species (CO2, SO2, H2SO4, etc.) observed on those objects are endogenic i.e. native from the satellite or are produced by exogenic processes, such as ion implantation.The results indicate that:C-ion implantation is not the dominant formation mechanism of CO2 on Europa, Ganimede and Callisto.Implantation of sulfur ions into water ice produces hydrated sulfuric acid with high efficiency such to give a very important contribution to the sulfur cycle on the surface of Europa and other satellites.Implantation of protons into carbon dioxide produces some species containing the projectile (H2CO3, and O-H in poly-water).Implantation of protons into sulfur dioxide produces SO3, polymers, and O3 but not H-S bonds.Water ice has been deposited on refractory carbonaceous materials: a general finding is the formation of a noteworthy quantity of CO2. We suggest that this is the primary mechanism to explain the presence of carbon dioxide on the surfaces of the Galilean satellites.Water ice has been deposited on refractory sulfurous materials originating from SO2 or H2S irradiation. No evidence for an efficient synthesis of SO2 has been found.

Structural properties of buried conducting layers formed by very low energy ion implantation of gold into polymer

NASA Astrophysics Data System (ADS)

Teixeira, F. S.; Salvadori, M. C.; Cattani, M.; Brown, I. G.

2009-09-01

We have investigated the fundamental structural properties of conducting thin films formed by implanting gold ions into polymethylmethacrylate (PMMA) polymer at 49 eV using a repetitively pulsed cathodic arc plasma gun. Transmission electron microscopy images of these composites show that the implanted ions form gold clusters of diameter ˜2-12 nm distributed throughout a shallow, buried layer of average thickness 7 nm, and small angle x-ray scattering (SAXS) reveals the structural properties of the PMMA-gold buried layer. The SAXS data have been interpreted using a theoretical model that accounts for peculiarities of disordered systems.

Reduction of Tribocorrosion Products When using the Platform-Switching Concept.

PubMed

Alrabeah, G O; Knowles, J C; Petridis, H

2018-03-01

The reduced marginal bone loss observed when using the platform-switching concept may be the result of reduced amounts of tribocorrosion products released to the peri-implant tissues. Therefore, the purpose of this study was to compare the tribocorrosion product release from various platform-matched and platform-switched implant-abutment couplings under cyclic loading. Forty-eight titanium implants were coupled with pure titanium, gold alloy, cobalt-chrome alloy, and zirconia abutments forming either platform-switched or platform-matched groups ( n = 6). The specimens were subjected to cyclic occlusal forces in a wet acidic environment for 24 h followed by static aqueous immersion for 6 d. The amount of metal ions released was measured using inductively coupled plasma mass spectrometry. Microscopic evaluations were performed pre- and postimmersion under scanning electron microscope (SEM) equipped with energy-dispersive spectroscopy X-ray for corrosion assessment at the interface and wear particle characterization. All platform-switched groups showed less metal ion release compared with their platform-matched counterparts within each abutment material group ( P < 0.001). Implants connected to platform-matched cobalt-chrome abutments demonstrated the highest total mean metal ion release (218 ppb), while the least total mean ion release (11 ppb) was observed in the implants connected to platform-switched titanium abutments ( P ≤ 0.001). Titanium was released from all test groups, with its highest mean release (108 ppb) observed in the implants connected to platform-matched gold abutments ( P < 0.001). SEM images showed surface tribocorrosion features such as pitting and bands of fretting scars. Wear particles were mostly titanium, ranging from submicron to 48 µm in length. The platform-matched groups demonstrated a higher amount of metal ion release and more surface damage. These findings highlight the positive effect of the platform-switching concept in the reduction of tribocorrosion products released from dental implants, which consequently may minimize the adverse tissue reactions that lead to peri-implant bone loss.

Biofunctionalization of silicone rubber with microgroove-patterned surface and carbon-ion implantation to enhance biocompatibility and reduce capsule formation.

PubMed

Lei, Ze-Yuan; Liu, Ting; Li, Wei-Juan; Shi, Xiao-Hua; Fan, Dong-Li

Silicone rubber implants have been widely used to repair soft tissue defects and deformities. However, poor biocompatibility can elicit capsule formation, usually resulting in prosthesis contracture and displacement in long-term usage. To overcome this problem, this study investigated the properties of silicone rubber materials with or without a microgroove-patterned surface and with or without carbon (C)-ion implantation. Atomic force microscopy, X-ray photoelectron spectroscopy, and a water contact angle test were used to characterize surface morphology and physicochemical properties. Cytocompatibility was investigated by a cell adhesion experiment, immunofluorescence staining, a Cell Counting Kit-8 assay, and scanning electron microscopy in vitro. Histocompatibility was evaluated by studying the inflammatory response and fiber capsule formation that developed after subcutaneous implantation in rats for 7 days, 15 days, and 30 days in vivo. Parallel microgrooves were found on the surfaces of patterned silicone rubber (P-SR) and patterned C-ion-implanted silicone rubber (PC-SR). Irregular larger peaks and deeper valleys were present on the surface of silicone rubber implanted with C ions (C-SR). The silicone rubber surfaces with microgroove patterns had stable physical and chemical properties and exhibited moderate hydrophobicity. PC-SR exhibited moderately increased dermal fibroblast cell adhesion and growth, and its surface microstructure promoted orderly cell growth. Histocompatibility experiments on animals showed that both the anti-inflammatory and antifibrosis properties of PC-SR were slightly better than those of the other materials, and there was also a lower capsular contracture rate and less collagen deposition around implants made from PC-SR. Although the surface chemical properties, dermal fibroblast cell growth, and cell adhesion were not changed by microgroove pattern modification, a more orderly cell arrangement was obtained, leading to enhanced biocompatibility and reduced capsule formation. Thus, this approach to the modification of silicone rubber, in combination with C-ion implantation, should be considered for further investigation and application.

Visible-light activate Ag/WO3 films based on wood with enhanced negative oxygen ions production properties

NASA Astrophysics Data System (ADS)

Gao, Likun; Gan, Wentao; Cao, Guoliang; Zhan, Xianxu; Qiang, Tiangang; Li, Jian

2017-12-01

The Ag/WO3-wood was fabricated through a hydrothermal method and a silver mirror reaction. The system of visible-light activate Ag/WO3-wood was used to produce negative oxygen ions, and the effect of Ag nanoparticles on negative oxygen ions production was investigated. From the results of negative oxygen ions production tests, it can be observed that the sample doped with Ag nanoparticles, the concentration of negative oxygen ions is up to 1660 ions/cm3 after 60 min visible light irradiation. Moreover, for the Ag/WO3-wood, even after 60 min without irradiation, the concentration of negative oxygen ions could keep more than 1000 ions/cm3, which is up to the standard of the fresh air. Moreover, due to the porous structure of wood, the wood acted as substrate could promote the nucleation of nanoparticles, prevent the agglomeration of the particles, and thus lead the improvement of photocatalytic properties. And such wood-based functional materials with the property of negative oxygen ions production could be one of the most promising materials in the application of indoor decoration materials, which would meet people's pursuit of healthy, environment-friendly life.

Development and fabrication of a solar cell junction processing system

NASA Technical Reports Server (NTRS)

Banker, S.

1982-01-01

Development of a pulsed electron beam subsystem, wafer transport system, and ion implanter are discussed. A junction processing system integration and cost analysis are reviewed. Maintenance of the electron beam processor and the experimental test unit of the non-mass analyzed ion implanter is reviewed.

Determination of Ni Release in NiTi SMA with Surface Modification by Nitrogen Plasma Immersion Ion Implantation

NASA Astrophysics Data System (ADS)

de Camargo, Eliene Nogueira; Oliveira Lobo, Anderson; Silva, Maria Margareth Da; Ueda, Mario; Garcia, Edivaldo Egea; Pichon, Luc; Reuther, Helfried; Otubo, Jorge

2011-07-01

NiTi SMA is a promising material in the biomedical area due to its mechanical properties and biocompatibility. However, the nickel in the alloy may cause allergic and toxic reactions and thus limiting its applications. It was evaluated the influence of surface modification in NiTi SMA by nitrogen plasma immersion ion implantation (varying temperatures, and exposure time as follows: <250 °C/2 h, 290 °C/2 h, and 560 °C/1 h) in the amount of nickel released using immersion test in simulated body fluid. The depth of the nitrogen implanted layer increased as the implantation temperature increased resulting in the decrease of nickel release. The sample implanted in high implantation temperature presented 35% of nickel release reduction compared to reference sample.

Estimation of the ionic charge of non-metallic species into an electrical discharge through a web application

NASA Astrophysics Data System (ADS)

Pérez Gutiérrez, B. R.; Vera-Rivera, F. H.; Niño, E. D. V.

2016-08-01

Estimate the ionic charge generated in electrical discharges will allow us to know more accurately the concentration of ions implanted on the surfaces of nonmetallic solids. For this reason, in this research a web application was developed to allow us to calculate the ionic charge generated in an electrical discharge from the experimental parameters established in an ion implantation process performed in the JUPITER (Joint Universal Plasma and Ion Technologies Experimental Reactor) reactor. The estimated value of the ionic charge will be determined from data acquired on an oscilloscope, during startup and shutdown of electrical discharge, which will then be analyzed and processed. The study will provide best developments with regard to the application of ion implantation in various industrial sectors.

Ion beam sputter etching of orthopedic implanted alloy MP35N and resulting effects on fatigue

NASA Technical Reports Server (NTRS)

Wintucky, E. G.; Christopher, M.; Bahnuik, E.; Wang, S.

1981-01-01

The effects of two types of argon ion sputter etched surface structures on the tensile stress fatigue properties of orthopedic implant alloy MP35N were investigated. One surface structure was a natural texture resulting from direct bombardment by 1 keV argon ions. The other structure was a pattern of square holes milled into the surface by a 1 keV argon ion beam through a Ni screen mask. The etched surfaces were subjected to tensile stress only in fatigue tests designed to simulate the cyclic load conditions experienced by the stems of artificial hip joint implants. Both types of sputter etched surface structures were found to reduce the fatigue strength below that of smooth surface MP35N.

Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomov, A. A., E-mail: lomov@ftian.ru; Myakon’kikh, A. V.; Chesnokov, Yu. M.

The surface layers of Si(001) substrates subjected to plasma-immersion implantation of helium ions with an energy of 2–5 keV and a dose of 5 × 10{sup 17} cm{sup –2} have been investigated using high-resolution X-ray reflectivity, Rutherford backscattering, and transmission electron microscopy. The electron density depth profile in the surface layer formed by helium ions is obtained, and its elemental and phase compositions are determined. This layer is found to have a complex structure and consist of an upper amorphous sublayer and a layer with a porosity of 30–35% beneath. It is shown that the porous layer has the sharpestmore » boundaries at a lower energy of implantable ions.« less

Study of Biological Effects of Low Energy Ion Implantation on Tomato and Radish Breeding

NASA Astrophysics Data System (ADS)

Liang, Qiuxia; Huang, Qunce; Cao, Gangqiang; Ying, Fangqing; Liu, Yanbo; Huang, Wen

2008-04-01

Biological effects of 30 keV low energy nitrogen ion implantation on the seeds of five types of tomato and one type of radish were investigated. Results showed that low energy ions have different effects on different vegetables. The whole dose-response curve of the germination ratio did not take on "the shape of saddle", but was a rising and falling waveform with the increase or decrease in ion implantation. In the vegetable of Solanaceae, two outstanding aberrant plants were selected from M1 of Henan No.4 tomato at a dose of 7 × 1017 nitrogen ions/cm2, which had thin-leaves, long-petal and nipple tip fruit stably inherited to M7. Furthermore the analysis of the isozyme showed that the activity of the mutant tomato seedling was distinct in quantity and color. In Raphanus sativus L., the aberrances were obvious in the mutant of radish 791 at a dose of 5 × 1017 nitrogen ions/cm2, and the weight of succulent root and the volume of growth were over twice the control's. At present, many species for breeding have been identified in the field and only stable species have been selected for the experiment of production. It is evident that the low energy ion implantation technology has clear effects on vegetables' genetic improvement.

Modification of WS2 nanosheets with controllable layers via oxygen ion irradiation

NASA Astrophysics Data System (ADS)

Song, Honglian; Yu, Xiaofei; Chen, Ming; Qiao, Mei; Wang, Tiejun; Zhang, Jing; Liu, Yong; Liu, Peng; Wang, Xuelin

2018-05-01

As one kind of two-dimensional materials, WS2 nanosheets have drawn much attention with different kinds of research methods. Yet ion irradiation method was barely used for WS2 nanosheets. In this paper, the structure, composition and optical band gap (Eg) of the multilayer WS2 films deposited by chemical vapor deposition (CVD) method on sapphire substrates before and after oxygen ion irradiation with different energy and fluences were studied. Precise tailored layer-structures and a controllable optical band gap of WS2 nanosheets were achieved after oxygen ion irradiation. The results shows higher energy oxygen irradiation changed the shape from triangular shaped grains to irregular rectangle shape but did not change 2H-WS2 phase structure. The intensity of E2g1 (Г) and A1g (Г) modes decreased and have small shifts after oxygen ion irradiation. The peak frequency difference between the E2g1 (Г) and A1g (Г) modes (Δω) decreased after oxygen ion irradiation, and this result indicates the number of layers decreased after oxygen ion irradiation. The Eg decreased with the increase of the energy and the fluence of oxygen ions. The number of layers, thickness and optical band gap changed after ion irradiation with different ion fluences and energies. The results proposed a new strategy for precise control of multilayer nanosheets and demonstrated the high applicability of ion irradiation in super-capacitors, field effect transistors and other applications.

Investigation of MeV-Cu implantation and channeling effects into porous silicon formation

NASA Astrophysics Data System (ADS)

Ahmad, M.; Naddaf, M.

2011-11-01

P-type (1 1 1) silicon wafers were implanted by copper ions (2.5 MeV) in channeling and random directions using ion beam accelerator of the Atomic Energy Commission of Syria (AECS). The effect of implantation direction on formation process of porous silicon (PS) using electrochemical etching method has been investigated using scanning electron microscope (SEM) and photoluminescence (PL) techniques. SEM observations revealed that the size, shape and density of the formed pores are highly affected by the direction of beam implantation. This in turn is seen to influence the PL behavior of the PS.

Quantitative Evaluation of Ion-implanted Arsenic in Silicon by Instrumental Neutron Activation Analysis

NASA Astrophysics Data System (ADS)

Takatsuka, Toshiko; Hirata, Kouichi; Kobayashi, Yoshinori; Kuroiwa, Takayoshi; Miura, Tsutomu; Matsue, Hideaki

2008-11-01

Certified reference materials (CRMs) of shallow arsenic implants in silicon are now under development at the National Metrology Institute of Japan (NMIJ). The amount of ion-implanted arsenic atoms is quantified by Instrumental Neutron Activation Analysis (INAA) using research reactor JRR-3 in Japan Atomic Energy Agency (JAEA). It is found that this method can evaluate arsenic amounts of 1015 atoms/cm2 with small uncertainties, and is adaptable to shallower dopants. The estimated uncertainties can satisfy the industrial demands for reference materials to calibrate the implanted dose of arsenic at shallow junctions.

Structural and electrical properties of Se-hyperdoped Si via ion implantation and flash lamp annealing

NASA Astrophysics Data System (ADS)

Liu, Fang; Prucnal, S.; Yuan, Ye; Heller, R.; Berencén, Y.; Böttger, R.; Rebohle, L.; Skorupa, W.; Helm, M.; Zhou, S.

2018-06-01

We report on the hyperdoping of silicon with selenium obtained by ion implantation followed by flash lamp annealing. It is shown that the degree of crystalline lattice recovery of the implanted layers and the Se substitutional fraction depend on the pulse duration and energy density of the flash. While the annealing at low energy densities leads to an incomplete recrystallization, annealing at high energy densities results in a decrease of the substitutional fraction of impurities. The electrical properties of the implanted layers are well-correlated with the structural properties resulting from different annealing processing.

PMMA and polystyrene films modification under ion implantation studied by spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Leontyev, A. V.; Kovalev, V. I.; Khomich, A. V.; Komarov, Fadei F.; Grigoryev, V. V.; Kamishan, A. S.

2004-05-01

We have applied spectroscopic ellipsometry with binary polarization modulation to study the refractive index n(λ) and extinction coefficient k(λ) spectra of as-deposited and irradiated with nitrogen ions polymethylmethacrylate (PMMA) and polystyrene (PS) films in 300-1030 nm range. The results of performed investigation confirmed the possibility and estimate restrictions of the ion implantation for local change the refractive index of polymeric materials.

Surface modification of single crystal LiTaO3 by H and He implantation

NASA Astrophysics Data System (ADS)

Ma, Changdong; Lu, Fei; Jin, Lei; Xu, Bo; Fan, Ranran

2017-02-01

Defects production and evolution in H and He ions co-implanted LiTaO3 under different implantation order (H + He and He + H) are investigated. Rutherford backscattering spectrometry (RBS), infrared (IR) spectroscopy and transmission electron microscopy (TEM) are used to study the lattice damage, composition and structure change in the buried damage region. Obvious differences of ions aggregation mechanism are found in H and He implanted LiTaO3. Blistering or splitting of LiTaO3 is more easily achieved in the case where He is implanted first compared to the reverses case. Significant damage enhancement and micro-fractures are observed in samples with He preimplant. The dispersed damage in H-first sample is due to the destruction by He post-bombardment of H-clusters. This order effect indicates the strong aggregation and trapping ability of He ions and He bubbles. The effect of coimplantation parameters on the cleaving of LiTaO3 is discussed.

Polyatomic ions from a high current ion implanter driven by a liquid metal ion source.

PubMed

Pilz, W; Laufer, P; Tajmar, M; Böttger, R; Bischoff, L

2017-12-01

High current liquid metal ion sources are well known and found their first application as field emission electric propulsion thrusters in space technology. The aim of this work is the adaption of such kind of sources in broad ion beam technology. Surface patterning based on self-organized nano-structures on, e.g., semiconductor materials formed by heavy mono- or polyatomic ion irradiation from liquid metal (alloy) ion sources (LMAISs) is a very promising technique. LMAISs are nearly the only type of sources delivering polyatomic ions from about half of the periodic table elements. To overcome the lack of only very small treated areas by applying a focused ion beam equipped with such sources, the technology taken from space propulsion systems was transferred into a large single-end ion implanter. The main component is an ion beam injector based on high current LMAISs combined with suited ion optics allocating ion currents in the μA range in a nearly parallel beam of a few mm in diameter. Different types of LMAIS (needle, porous emitter, and capillary) are presented and characterized. The ion beam injector design is specified as well as the implementation of this module into a 200 kV high current ion implanter operating at the HZDR Ion Beam Center. Finally, the obtained results of large area surface modification of Ge using polyatomic Bi 2 + ions at room temperature from a GaBi capillary LMAIS will be presented and discussed.

Polyatomic ions from a high current ion implanter driven by a liquid metal ion source

NASA Astrophysics Data System (ADS)

Pilz, W.; Laufer, P.; Tajmar, M.; Böttger, R.; Bischoff, L.

2017-12-01

High current liquid metal ion sources are well known and found their first application as field emission electric propulsion thrusters in space technology. The aim of this work is the adaption of such kind of sources in broad ion beam technology. Surface patterning based on self-organized nano-structures on, e.g., semiconductor materials formed by heavy mono- or polyatomic ion irradiation from liquid metal (alloy) ion sources (LMAISs) is a very promising technique. LMAISs are nearly the only type of sources delivering polyatomic ions from about half of the periodic table elements. To overcome the lack of only very small treated areas by applying a focused ion beam equipped with such sources, the technology taken from space propulsion systems was transferred into a large single-end ion implanter. The main component is an ion beam injector based on high current LMAISs combined with suited ion optics allocating ion currents in the μA range in a nearly parallel beam of a few mm in diameter. Different types of LMAIS (needle, porous emitter, and capillary) are presented and characterized. The ion beam injector design is specified as well as the implementation of this module into a 200 kV high current ion implanter operating at the HZDR Ion Beam Center. Finally, the obtained results of large area surface modification of Ge using polyatomic Bi2+ ions at room temperature from a GaBi capillary LMAIS will be presented and discussed.

Ion beam technology applications study. [ion impact, implantation, and surface finishing

NASA Technical Reports Server (NTRS)

Sellen, J. M., Jr.; Zafran, S.; Komatsu, G. K.

1978-01-01

Specific perceptions and possible ion beam technology applications were obtained as a result of a literature search and contact interviews with various institutions and individuals which took place over a 5-month period. The use of broad beam electron bombardment ion sources is assessed for materials deposition, removal, and alteration. Special techniques examined include: (1) cleaning, cutting, and texturing for surface treatment; (2) crosslinking of polymers, stress relief in deposited layers, and the creation of defect states in crystalline material by ion impact; and (3) ion implantation during epitaxial growth and the deposition of neutral materials sputtered by the ion beam. The aspects, advantages, and disadvantages of ion beam technology and the competitive role of alternative technologies are discussed.

DIN 1.7035 Steel Modification with High Intensity Nitrogen Ion Implantation

NASA Astrophysics Data System (ADS)

Ryabchikov, A. I.; Sivin, D. O.; Anan'in, P. S.; Ivanova, A. I.; Uglov, V. V.; Korneva, O. S.

2018-06-01

The paper presents research results on the formation of deep ion-modified layers of the grade DIN 1.7035 alloy steel due to a high intensity, repetitively-pulsed nitrogen ion beams with the ion current density of up to 0.5 A/cm2. The formation of a low-energy, high intensity nitrogen ion beam is based on a plasma immersion ion extraction followed by the ballistic focusing in the equipotential drift region. The nitrogen ion implantation in steel specimens is performed at a 1.2 keV energy and 450, 500, 580 and 650°C temperatures during 60 minutes. The morphology, elementary composition and mechanical properties are investigated in deep layers of steel specimens alloyed with nitrogen ions.

Development and fabrication of a solar cell junction processing system

NASA Technical Reports Server (NTRS)

1984-01-01

A processing system capable of producing solar cell junctions by ion implantation followed by pulsed electron beam annealing was developed and constructed. The machine was to be capable of processing 4-inch diameter single-crystal wafers at a rate of 10(7) wafers per year. A microcomputer-controlled pulsed electron beam annealer with a vacuum interlocked wafer transport system was designed, built and demonstrated to produce solar cell junctions on 4-inch wafers with an AMI efficiency of 12%. Experiments showed that a non-mass-analyzed (NMA) ion beam could implant 10 keV phosphorous dopant to form solar cell junctions which were equivalent to mass-analyzed implants. A NMA ion implanter, compatible with the pulsed electron beam annealer and wafer transport system was designed in detail but was not built because of program termination.

Evidence for the dissolution of molybdenum during tribocorrosion of CoCrMo hip implants in the presence of serum protein.

PubMed

Simoes, Thiago A; Bryant, Michael G; Brown, Andy P; Milne, Steven J; Ryan, Mary; Neville, Anne; Brydson, Rik

2016-11-01

We have characterized CoCrMo, Metal-on-Metal (MoM) implant, wear debris particles and their dissolution following cycling in a hip simulator, and have related the results to the tribocorrosion of synthetic wear debris produced by milling CoCrMo powders in solutions representative of environments in the human body. Importantly, we have employed a modified ICP-MS sample preparation procedure to measure the release of ions from CoCrMo alloys during wear simulation in different media; this involved use of nano-porous ultrafilters which allowed complete separation of particles from free ions and complexes in solution. As a result, we present a new perspective on the release of metal ions and formation of metal complexes from CoCrMo implants. The new methodology enables the mass balance of ions relative to complexes and particles during tribocorrosion in hip simulators to be determined. A much higher release of molybdenum ions relative to cobalt and chromium has been measured. The molybdenum dissolution was enhanced by the presence of bovine serum albumin (BSA), possibly due to the formation of metal-protein complexes. Overall, we believe that the results could have significant implications for the analysis and interpretation of metal ion levels in fluids extracted from hip arthroplasty patients; we suggest that metal levels, including molybdenum, be analysed in these fluids using the protocol described here. We have developed an important new protocol for the analysis of metal ion levels in fluids extracted from hip implant patients and also hip simulators. Using this procedure, we present a new perspective on the release of metal ions from CoCrMo alloy implants, revealing significantly lower levels of metal ion release during tribocorrosion in hip simulators than previously thought, combined with the release of much higher percentages of molybdenum ions relative to cobalt and chromium. This work is of relevance, both from the perspective of the fundamental science and study of metal-protein interactions, enabling understanding of the ongoing problem associated with the biotribocorrosion and the link to inflammation associated with Metal-on-Metal (MoM) hip implants made from CoCrMo alloys. Copyright © 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Korteweg-deVries-Burgers (KdVB) equation in a five component cometary plasma with kappa described electrons and ions

NASA Astrophysics Data System (ADS)

Michael, Manesh; Willington, Neethu T.; Jayakumar, Neethu; Sebastian, Sijo; Sreekala, G.; Venugopal, Chandu

2016-12-01

We investigate the existence of ion-acoustic shock waves in a five component cometary plasma consisting of positively and negatively charged oxygen ions, kappa described hydrogen ions, hot solar electrons, and slightly colder cometary electrons. The KdVB equation has been derived for the system, and its solution plotted for different kappa values, oxygen ion densities, as well as the temperature ratios for the ions. It is found that the amplitude of the shock wave decreases with increasing kappa values. The strength of the shock profile decreases with increasing temperatures of the positively charged oxygen ions and densities of negatively charged oxygen ions.

Impact energy and retained dose uniformity in enhanced glow discharge plasma immersion ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Q. Y.; Fu, Ricky K. Y.; Chu, Paul K.

2009-08-10

The implantation energy and retained dose uniformity in enhanced glow discharge plasma immersion ion implantation (EGD-PIII) is investigated numerically and experimentally. Depth profiles obtained from different samples processed by EGD-PIII and traditional PIII are compared. The retained doses under different pulse widths are calculated by integrating the area under the depth profiles. Our results indicate that the improvement in the impact energy and retained dose uniformity by this technique is remarkable.

Electrical properties of PMMA ion-implanted with low-energy Si+ beam

NASA Astrophysics Data System (ADS)

Hadjichristov, G. B.; Gueorguiev, V. K.; Ivanov, Tz E.; Marinov, Y. G.; Ivanov, V. G.; Faulques, E.

2010-01-01

The electrical properties of polymethylmethacrylate (PMMA) after implantation with silicon ions accelerated to an energy of 50 keV are studied under DC electric bias field. The electrical response of the formed material is examined as a function of Si+ fluence in the range 1014 - 1017 cm-2. The carbonaceous subsurface region of the Si+-implanted PMMA displays a significant DC conductivity and a sizable field effect that can be used for electronic applications.

Radial transport of high-energy oxygen ions into the deep inner magnetosphere observed by Van Allen Probes

NASA Astrophysics Data System (ADS)

Mitani, K.; Seki, K.; Keika, K.; Gkioulidou, M.; Lanzerotti, L. J.; Mitchell, D. G.; Kletzing, C.

2017-12-01

It is known that proton is main contributor of the ring current and oxygen ions can make significant contribution during major magnetic storms. Ions are supplied to the ring current by radial transport from the plasma sheet. Convective transport of lower-energy protons and diffusive transport of higher-energy protons were reported to contribute to the storm-time and quiet-time ring current respectively [e.g., Gkioulidou et al., 2016]. However, supply mechanisms of the oxygen ions are not clear. To characterize the supply of oxygen ions to the ring current during magnetic storms, we studied the properties of energetic proton and oxygen ion phase space densities (PSDs) for specific magnetic moment (μ) during the April 23-25, 2013, geomagnetic storm observed by the Van Allen Probes mission. We here report on radial transport of high-energy (μ ≥ 0.5 keV/nT) oxygen ions into the deep inner magnetosphere during the late main phase of the magnetic storm. Since protons show little change during this period, this oxygen radial transport is inferred to cause the development of the late main phase. Enhancement of poloidal magnetic fluctuations is simultaneously observed. We estimated azimuthal mode number ≤5 by using cross wavelet analysis with ground-based observation of IMAGE ground magnetometers. The fluctuations can resonate with drift and bounce motions of the oxygen ions. The results suggest that combination of the drift and drift-bounce resonances is responsible for the radial transport of high-energy oxygen ions into the deep inner magnetosphere. We also report on the radial transport of the high-energy oxygen ions into the deep inner magnetosphere during other magnetic storms.

Finite Gyroradius Effects Observed in Pickup Oxygen Ions at Venus

NASA Technical Reports Server (NTRS)

Hartle, Richard E.; Intriligator, Devrie; Grebowsky, Joseph M.; Einaudi, Franco (Technical Monitor)

2000-01-01

On the dayside of Venus, the hot oxygen corona extending above the ionopause is the principal source of pickup oxygen ions. The ions are born here and picked up by the ionosheath plasma as it is deflected around the planet. These pickup ions have been observed by the Orbiter Plasma Analyzer (OPA) throughout the Pioneer Venus Orbiter (PVO) mission. They were observed over a region extending from their dayside source to great distances downstream (about 10 Venus radii), in the solar wind wake, as PVO passed through apoapsis. Finite gyroradius effects in the velocity distribution of the oxygen pickup ions are expected in the source region because the gyroradius is several times larger than the scale height of the hot oxygen source. Such effects are also expected in those regions of the ionosheath where the scale lengths of the magnetic field and the ambient plasma velocity field are less than the pickup ion gyroradius. While explicitly accounting for the spatial distribution of the hot oxygen source, an analytic expression for the pickup oxygen ion velocity distribution is developed to study how it is affected by finite gyroradii. The analysis demonstrates that as the gyroradius increases by factors of three to six above the hot oxygen scale height, the peak of the pickup oxygen ion flux distribution decreases 25 to 50% below the maximum allowed speed, which is twice the speed of the ambient plasma times the sine of the angle between the magnetic field and the flow velocity. The pickup oxygen ion flux distribution observed by OPA is shown to follow this behavior in the source region. It is also shown that this result is consistent with the pickup ion distributions observed in the wake, downstream of the source, where the flux peaks are usually well below the maximum allowed speed.

Resonance ultrasonic vibrations in Cz-Si wafers as a possible diagnostic technique in ion implantation

NASA Astrophysics Data System (ADS)

Zhao, Z. Y.; Ostapenko, S.; Anundson, R.; Tvinnereim, M.; Belyaev, A.; Anthony, M.

2001-07-01

The semiconductor industry does not have effective metrology for well implants. The ability to measure such deep level implants will become increasingly important as we progress along the technology road map. This work explores the possibility of using the acoustic whistle effect on ion implanted silicon wafers. The technique detects the elastic stress and defects in silicon wafers by measuring the sub-harmonic f/2 resonant vibrations on a wafer induced via backside contact to create standing waves, which are measured by a non-contact ultrasonic probe. Preliminary data demonstrates that it is sensitive to implant damage, and there is a direct correlation between this sub-harmonic acoustic mode and some of the implant and anneal conditions. This work presents the results of a feasibility study to assess and quantify the correspondent whistle effect to implant damage, residual damage after annealing and intrinsic defects.

Prospects of using titanium nickelide implants with modified surface in dental implantology.

PubMed

Razdorsky, V V

2008-06-01

Corrosion resistance and biocompatibility of 60 specimens of titanium nickelide with modified surfaces implanted into spongy bone were studied in rabbit experiments. Specimens modified by molybdenum ions exhibited high inertness and favorable tissue reaction. No accumulation of nickel and titanium ions in animal organs was detected.

Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xiaotie; Rudawski, Nicholas G.; Appleton, Bill R.

2016-07-14

In this paper, we report a systematic study that shows how the numerous processing parameters associated with ion implantation (II) and pulsed laser annealing (PLA) can be manipulated to control the quantity and quality of graphene (G), few-layer graphene (FLG), and other carbon nanostructures selectively synthesized in crystalline SiC (c-SiC). Controlled implantations of Si{sup −} plus C{sup −} and Au{sup +} ions in c-SiC showed that both the thickness of the amorphous layer formed by ion damage and the doping effect of the implanted Au enhance the formation of G and FLG during PLA. The relative contributions of the amorphousmore » and doping effects were studied separately, and thermal simulation calculations were used to estimate surface temperatures and to help understand the phase changes occurring during PLA. In addition to the amorphous layer thickness and catalytic doping effects, other enhancement effects were found to depend on other ion species, the annealing environment, PLA fluence and number of pulses, and even laser frequency. Optimum II and PLA conditions are identified and possible mechanisms for selective synthesis of G, FLG, and carbon nanostructures are discussed.« less

Ion implantation modified stainless steel as a substrate for hydroxyapatite deposition. Part II. Biomimetic layer growth and characterization.

PubMed

Pramatarova, L; Pecheva, E; Krastev, V

2007-03-01

The interest in stainless steel as a material widely used in medicine and dentistry has stimulated extensive studies on improving its bone-bonding properties. AISI 316 stainless steel is modified by a sequential ion implantation of Ca and P ions (the basic ions of hydroxyapatite), and by Ca and P implantation and subsequent thermal treatment in air (600( composite function)C, 1 h). This paper investigates the ability of the as-modified surfaces to induce hydroxyapatite deposition by using a biomimetic approach, i.e. immersion in a supersaturated aqueous solution resembling the human blood plasma (the so-called simulated body fluid). We describe our experimental procedure and results, and discuss the physico-chemical properties of the deposed hydroxyapatite on the modified stainless steel surfaces. It is shown that the implantation of a selected combination of ions followed by the applied methodology of the sample soaking in the simulated body fluid yield the growth of hydroxyapatite layers with composition and structure resembling those of the bone apatite. The grown layers are found suitable for studying the process of mineral formation in nature (biomineralization).

Structural analysis of ion-implanted chemical-vapor-deposited diamond by transmission electron microscope

NASA Astrophysics Data System (ADS)

Jiang, N.; Deguchi, M.; Wang, C. L.; Won, J. H.; Jeon, H. M.; Mori, Y.; Hatta, A.; Kitabatake, M.; Ito, T.; Hirao, T.; Sasaki, T.; Hiraki, A.

1997-04-01

A transmission electron microscope (TEM) study of ion-implanted chemical-vapor-deposited (CVD) diamond is presented. CVD diamond used for transmission electron microscope observation was directly deposited onto Mo TEM grids. As-deposited specimens were irradiated by C (100 keV) ions at room temperature with a wide range of implantation doses (10 12-10 17/cm 2). Transmission electron diffraction (TED) patterns indicate that there exists a critical dose ( Dc) for the onset of amorphization of CVD diamond as a result of ion induced damage and the value of critical dose is confirmed to be about 3 × 10 15/cm 2. The ion-induced transformation process is clearly revealed by high resolution electron microscope (HREM) images. For a higher dose implantation (7 × 10 15/cm 2) a large amount of diamond phase is transformed into amorphous carbon and many tiny misoriented diamond blocks are found to be left in the amorphous solid. The average size of these misoriented diamond blocks is only about 1-2 nm. Further bombardment (10 17/cm 2) almost kills all of the diamond phase within the irradiated volume and moreover leads to local formation of micropolycrystalline graphite.

Ion implantation modified stainless steel as a substrate for hydroxyapatite deposition. Part I. Surface modification and characterization.

PubMed

Pramatarova, L; Pecheva, E; Krastev, V; Riesz, F

2007-03-01

Material surfaces play critical role in biology and medicine since most biological reactions occur on surfaces and interfaces. There are many examples showing that the surface properties of the materials control and are directly involved in biological reactions and processes in-vitro like blood compatibility, protein absorption, cell development, etc. The rules that govern the diversity of biological surface phenomenon are fundamental physical laws. Stainless steel doped with Cr, Ni and Mo is widely used material in medicine and dentistry due to its excellent corrosion resistance and mechanical properties. The interest in this material has stimulated extensive studies on improving its bone-bonding properties. This paper describes the surface modification of Cr-Ni stainless steel (AISI 316) by a whole surface sequential implantation of Ca and P ions (the basic ions of hydroxyapatite). Three groups of stainless steel samples are prepared: (i) ion-implanted, (ii) ion-implanted and thermally treated at 600( composite function)C in air for 1 h and (iii) initials. The surface chemistry and topography before and after the surface modification are characterized by X-ray photoelectron spectroscopy, Auger electron spectroscopy, magic mirror method, atomic force microscopy and contact angle measurements.

Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pokotilo, Yu. M., E-mail: Pokotilo@bsu.by; Petukh, A. N.; Litvinov, V. V.

2016-08-15

The distributions of hydrogen-containing donors in Ge{sub 1–x}Si{sub x} (0 ≤ x ≤ 0.06) alloys implanted with hydrogen ions with an energy of 200 and 300 keV and a dose of 1 × 10{sup 15} cm{sup –2} are studied. It is established that, at the higher ion energy, the limiting donor concentration after postimplantation heat treatment (275°C) is attained within ~30 min and, at the lower energy, within ~320 min. In contrast to donors formed near the surface, a portion of hydrogen-containing donors formed upon the implantation of ions with the higher energy possess the property of bistability. The limitingmore » donor concentration is independent of the ion energy, but decreases from 1.3 × 10{sup 16} to 1.5 × 10{sup 15} cm{sup –3}, as the Si impurity content in the alloy is increased from x = 0.008 to x = 0.062. It is inferred that the observed differences arise from the participation of the surface in the donor formation process, since the surface significantly influences defect-formation processes involving radiation-induced defects, whose generation accompanies implantation.« less

Strain Evolution of Annealed Hydrogen-Implanted (0001) Sapphire

NASA Astrophysics Data System (ADS)

Wong, Christine Megan

Exfoliation is a technique used to remove a thin, uniform layer of material from the bulk that involves the annealing of hydrogen ion-implanted materials in order to initiate defect nucleation and growth leading to guided crack propagation. This study presents an investigation into the annealing process required to initiate blistering (an essential precursor to exfoliation) in (0001) sapphire implanted at room temperature with hydrogen ions. Triple axis x-ray diffraction was used to characterize the evolution of the implanted layer for single crystal (0001) sapphire substrates implanted at room temperature at 360 keV with either a 5x1016 cm -2 or 8x1016 cm-2 dose of hydrogen ions. A simulation of the ion distribution in TRIM estimated that the projected range and thickness of the implanted layer for both doses was approximately 2.2 mum. Following implantation, the implanted sapphire was annealed using a two-step annealing procedure. The first step was performed at a lower temperature, ideally to nucleate and coarsen defects. Temperatures investigated ranged from 550 - 650 °C. The second step was performed at a higher temperature (800 °C) to induce further defect coarsening and surface blistering. After all annealing steps, triple axis o/2theta and o scans were taken to observe any changes in the diffraction profile - namely, any reduction in the amplitude and shift in the location of the fringes associated with strain in the crystal - which would correlate with defect growth and nucleation. It was found that significant strain fringe reduction first occurred after annealing at 650 °C for 8 hours for both doses; however, it was not clear whether or not this strain reduction was due primarily to hydrogen diffusion or to recovery of other defects induced during the ion implantation. The o/2theta curves were then fit using Bede RADS in order to quantify the strain within the crystal and confirm the reduction of the strained layer within the crystal. Finally, Nomarski optical images of the sample surfaces were taken after each step to observe any visual changes or blistering that might have occurred. These optical images showed that the strain reduction observed using XRD did not correlate to blistering, as no blisters were observed in any of the optical images. Experimental results showed that at temperatures below 650 °C, no significant strain reduction occurs in hydrogen ion implanted (0001) sapphire. It has also been determined that for (0001) sapphire implanted at room temperature, it was not possible to produce surface blistering after a two-step annealing process at 650 °C and 800 °C, although significant strain reduction did occur, and ? scans showed peak broadening with subsequent annealing, indicating increasing mosaicity and potential defect nucleation. This was in contrast to previous findings that asserted that for sapphire annealed at 650 °C, surface blistering was observable. As previous findings were based on sapphire implanted at elevated temperatures, this may imply that the sapphire substrate reaches a higher temperature than expected during such implantation processes, which may account for the capability for surface blistering at a lower temperature. Conversely, for room temperature ion implantation, temperatures greater than 800 °C may be necessary to first nucleate hydrogen platelet defects and then produce surface blistering.

Method and reaction pathway for selectively oxidizing organic compounds

DOEpatents

Camaioni, Donald M.; Lilga, Michael A.

1998-01-01

A method of selectively oxidizing an organic compound in a single vessel comprises: a) combining an organic compound, an acid solution in which the organic compound is soluble, a compound containing two oxygen atoms bonded to one another, and a metal ion reducing agent capable of reducing one of such oxygen atoms, and thereby forming a mixture; b) reducing the compound containing the two oxygen atoms by reducing one of such oxygen atoms with the metal ion reducing agent to, 1) oxidize the metal ion reducing agent to a higher valence state, and 2) produce an oxygen containing intermediate capable of oxidizing the organic compound; c) reacting the oxygen containing intermediate with the organic compound to oxidize the organic compound into an oxidized organic intermediate, the oxidized organic intermediate having an oxidized carbon atom; d) reacting the oxidized organic intermediate with the acid counter ion and higher valence state metal ion to bond the acid counter ion to the oxidized carbon atom and thereby produce a quantity of an ester incorporating the organic intermediate and acid counter ion; and e) reacting the oxidized organic intermediate with the higher valence state metal ion and water to produce a quantity of alcohol which is less than the quantity of ester, the acid counter ion incorporated in the ester rendering the carbon atom bonded to the counter ion less reactive with the oxygen containing intermediate in the mixture than is the alcohol with the oxygen containing intermediate.

Dielectric relaxation of barium strontium titanate and application to thin films for DRAM capacitors

NASA Astrophysics Data System (ADS)

Baniecki, John David

This thesis examines the issues associated with incorporating the high dielectric constant material Barium Strontium Titanate (BSTO) in to the storage capacitor of a dynamic random access memory (DRAM). The research is focused on two areas: characterizing and understanding the factors that control charge retention in BSTO thin films and modifying the electrical properties using ion implantation. The dielectric relaxation of BSTO thin films deposited by metal-organic chemical vapor deposition (MOCVD) is investigated in the time and frequency domains. It is shown that the frequency dispersion of the complex capacitance of BSTO thin films can be understood in terms of a power-law frequency dependence from 1mHz to 20GHz. From the correspondence between the time and frequency domain measurements, it is concluded that the power-law relaxation currents extend back to the nano second regime of DRAM operation. The temperature, field, and annealing dependence of the dielectric relaxation currents are also investigated and mechanisms for the observed power law relaxation are explored. An equivalent circuit model of a high dielectric constant thin film capacitor is developed based on the electrical measurements and implemented in PSPICE. Excellent agreement is found between the experimental and simulated electrical characteristics showing the utility of the equivalent circuit model in simulating the electrical properties of high dielectric constant thin films. Using the equivalent circuit model, it is shown that the greatest charge loss due to dielectric relaxation occurs during the first read after a refresh time following a write to the opposite logic state for a capacitor that has been written to the same logic state for a long time (opposite state write charge loss). A theoretical closed form expression that is a function of three material parameters is developed which estimates the opposite state write charge loss due to dielectric relaxation. Using the closed form expression, and BSTO thin film electrical characteristics, the charge loss due to dielectric relaxation is estimated to be 6--12% of the initial charge stored on the capacitor plates for MOCVD BSTO thin films with Pt electrodes after a post top electrode anneal in oxygen. In contrast, it is shown that the charge loss due to steady state leakage is only 0.0125--0.125% of the initial charge stored on the capacitor plates. Charge retention is shown to depend strongly on the annealing conditions. Annealing MOCVD BSTO thin films with Pt electrodes in forming gas (95% Ar 5% H2) increases charge loss due to dielectric relaxation to as much as 60%. Ion implantation is used to dope BSTO thin films with Mn. X-ray diffraction and transmission electron microscopy (TEM) shows ion implantation significantly damages the film leaving only short-range order, but post-implant annealing heals the damage. Capacitance recovery after post-implant annealing is as high as 94% for 15 nm BSTO films. At low implant doses, the Mn doped films have substantially lower leakage (up to a factor of ten lower) and only slightly higher relaxation currents and dielectric loss indicating that ion implantation may be a potentially viable way of introducing dopants into high dielectric constant thin films for future DRAM applications.