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Sample records for p-type hydrogenated nanocrystalline

  1. Enhancement of p-type conductivity in nanocrystalline BaTiO3 ceramics

    NASA Astrophysics Data System (ADS)

    Guo, Xin; Pithan, Christian; Ohly, Christian; Jia, Chun-Lin; Dornseiffer, Jügen; Haegel, Franz-Hubert; Waser, Rainer

    2005-02-01

    Undoped BaTiO3 ceramic samples with an average grain size of ˜35nm were prepared and the electrical properties investigated. The defect structure is dominated by acceptor impurities; therefore, the conductivity of nanocrystalline BaTiO3 is of p-type. Comparing with microcrystalline BaTiO3, the conductivity of nanocrystalline BaTiO3 is about 1 to 2 orders of magnitude higher and the activation energy remarkably lower, which is ascribed to a greatly reduced oxidation enthalpy in nanocrystalline BaTiO3 (˜0.3 versus ˜0.92eV for microcrystalline BaTiO3).

  2. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Ambade, Swapnil B.; Mane, R. S.; Kale, S. S.; Sonawane, S. H.; Shaikh, Arif V.; Han, Sung-Hwan

    2006-12-01

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 °C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu 2- xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm 2 light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  3. LIGHT-WEIGHT NANOCRYSTALLINE HYDROGEN STORAGE MATERIALS

    SciTech Connect

    S. G. Sankar; B. Zande; R.T. Obermyer; S. Simizu

    2005-11-21

    During Phase I of this SBIR Program, Advanced Materials Corporation has addressed two key issues concerning hydrogen storage: 1. We have conducted preliminary studies on the effect of certain catalysts in modifying the hydrogen absorption characteristics of nanocrystalline magnesium. 2. We have also conducted proof-of-concept design and construction of a prototype instrument that would rapidly screen materials for hydrogen storage employing chemical combinatorial technique in combination with a Pressure-Composition Isotherm Measurement (PCI) instrument. 3. Preliminary results obtained in this study approach are described in this report.

  4. Effect of p-type multi-walled carbon nanotubes for improving hydrogen storage behaviors

    SciTech Connect

    Lee, Seul-Yi; Yop Rhee, Kyong; Nahm, Seung-Hoon; Park, Soo-Jin

    2014-02-15

    In this study, the hydrogen storage behaviors of p-type multi-walled carbon nanotubes (MWNTs) were investigated through the surface modification of MWNTs by immersing them in sulfuric acid (H{sub 2}SO{sub 4}) and hydrogen peroxide (H{sub 2}O{sub 2}) at various ratios. The presence of acceptor-functional groups on the p-type MWNT surfaces was confirmed by X-ray photoelectron spectroscopy. Measurement of the zeta-potential determined the surface charge transfer and dispersion of the p-type MWMTs, and the hydrogen storage capacity was evaluated at 77 K and 1 bar. From the results obtained, it was found that acceptor-functional groups were introduced onto the MWNT surfaces, and the dispersion of MWNTs could be improved depending on the acid-mixed treatment conditions. The hydrogen storage was increased by acid-mixed treatments of up to 0.36 wt% in the p-type MWNTs, compared with 0.18 wt% in the As-received MWNTs. Consequently, the hydrogen storage capacities were greatly influenced by the acceptor-functional groups of p-type MWNT surfaces, resulting in increased electron acceptor–donor interaction at the interfaces. - Graphical abstract: Hydrogen storage behaviors of the p-type MWNTs with the acid-mixed treatments are described. Display Omitted Display Omitted.

  5. Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

    SciTech Connect

    Goto, Masaki; Amano, Ryo; Shimoda, Naotaka; Kato, Yoshimine; Teii, Kungen

    2014-04-14

    Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10{sup 7} at room temperature and 10{sup 4} even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

  6. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    PubMed

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  7. Wide band gap p-type nanocrystalline CuBO{sub 2} as a novel UV photocatalyst

    SciTech Connect

    Santra, S.; Das, N.S.; Chattopadhyay, K.K.

    2013-07-15

    Graphical abstract: - Highlights: • CuBO{sub 2} nanocrystals were synthesized by sol–gel route. • The products have been characterized to confirm the formation of CuBO{sub 2}. • Photocatalytic activity of this material is reported for the first time. - Abstract: Wide band gap copper based delafossite CuBO{sub 2} nanocrystalline powders of different particle sizes were synthesized via sol–gel route. Structural characterization was performed using X-ray diffraction (XRD) and transmission electron microscopy (TEM) which confirmed good crystallinity and proper phase formation of the samples. Compositional analysis was carried out by energy dispersive X-ray studies (EDX), whereas field emission scanning electron microscopy revealed morphological information of the samples. The photocatalytic performance of this delafossite material was studied for the first time with a standard photocatalytic set-up and the photocatalytic efficiency was found to increase with decreasing particle size. The Langmuir–Hinshelwood photocatalytic rate constants increased considerably for the samples synthesized at different pH from 2.75 to 0.5; which eventually varied particle size. The efficient photocatalytic performance, found for the first time here, will make this novel p-type wide band gap semiconductor a truly multifunctional material.

  8. Controllable nonlinear refraction characteristics in hydrogenated nanocrystalline silicon

    SciTech Connect

    Zheng, D. Q.; Ye, Q. H.; Shen, W. Z.; Su, W. A.

    2014-02-07

    Nonlinear refraction (NLR) of hydrogenated nanocrystalline silicon (nc-Si:H) has been investigated through the close aperture Z-scan method. We demonstrate a significant NLR and a unique feature of controllable NLR characteristics between saturable and Kerr NLR with the incident photon energy. We numerically evaluate the proportion of these two mechanisms in different wavelengths by a modified NLR equation. The band tail of nc-Si:H appears to play a crucial role in such NLR responses.

  9. Evidence for an iron-hydrogen complex in p-type silicon

    SciTech Connect

    Leonard, S. Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Murphy, J. D.

    2015-07-20

    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90–120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at E{sub v} + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10{sup −17} cm{sup 2}. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.

  10. Evidence for an iron-hydrogen complex in p-type silicon

    NASA Astrophysics Data System (ADS)

    Leonard, S.; Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Murphy, J. D.

    2015-07-01

    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90-120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at Ev + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10-17 cm2. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.

  11. DLTS study of defects in hydrogen plasma treated p-type silicon

    NASA Astrophysics Data System (ADS)

    Wu, L.; Leitch, A. W. R.

    2001-12-01

    A deep level transient spectroscopy (DLTS) study of defects found in float-zone p-type silicon exposed to a DC hydrogen plasma is reported. DLTS measurements of these samples revealed three deep levels. Two of the levels are broad, with ET- EV in the range 0.34-0.39 eV (H2) and 0.40-0.44 eV (H3); these appear as bands in the Arrhenius plot. The third level has an activation energy of 0.09 eV (H1). The variations in the capture cross-sections of H2 and H3 are believed to be strain-related. The concentration of H3 exceeds the other two levels and decreases rapidly into the samples with ∼10 15 cm -3 at a depth of 0.20 μm. H3 is tentatively ascribed to an extended defect.

  12. Sputtering deposition of P-type SnO films with SnO₂ target in hydrogen-containing atmosphere.

    PubMed

    Hsu, Po-Ching; Hsu, Chao-Jui; Chang, Ching-Hsiang; Tsai, Shiao-Po; Chen, Wei-Chung; Hsieh, Hsing-Hung; Wu, Chung-Chih

    2014-08-27

    In this work, we had investigated sputtering deposition of p-type SnO using the widely used and robust SnO2 target in a hydrogen-containing reducing atmosphere. The effects of the hydrogen-containing sputtering gas on structures, compositions, optical, and electrical properties of deposited SnOx films were studied. Results show that polycrystalline and SnO-dominant films could be readily obtained by carefully controlling the hydrogen gas ratio in the sputtering gas and the extent of reduction reaction. P-type conductivity was unambiguously observed for SnO-dominant films with traceable Sn components, exhibiting a p-type Hall mobility of up to ∼3 cm(2) V(-1) s(-1). P-type SnO thin-film transistors using such SnO-dominant films were also demonstrated.

  13. Thermal model for breakdown in p-type hydrogenated amorphous silicon films with coplanar electrodes

    NASA Astrophysics Data System (ADS)

    Avila, A.; Asomoza, R.

    2000-09-01

    p-Type glow discharge hydrogenated amorphous silicon films with nearly placed (˜5 μm) coplanar metallic electrodes were led to breakdown under the effect of voltage bias. Non-ohmicity in the I- V plot was analyzed in order to look for the transport mechanism helping to produce breakdown in the films. A thermal model is shown to fit reasonably the electrical behavior of samples prior to breakdown. Two parts are developed in this approximation: the first one assumes that during the initial homogeneous heating of the semiconductor due to Joule effect, stationary states are reached. The heat is assumed to dissipate from the metallic contacts through a Newton's convection mechanism. From the experimental data and the model proposed, the I- V plot is fitted, the heat transfer area and constant are calculated and the temperature-voltage plot is determined. In the second part, the heat conduction equation along the distance between the contacts is numerically solved in one dimension with this information. The result provides an estimate of the time required by the sample to reach a certain steady-state limiting temperature above which much faster heating produces breakdown. This time correlates well to the delay time reported in the literature.

  14. Annealing Behaviour of Hydrogenated and Oxidized Nanocrystalline Diamond

    NASA Astrophysics Data System (ADS)

    Schaefer, J. A.; Neumann, A.; Uhlig, J.; Finsterbusch, M.; Eremtchenko, M.; Ahmed, S. I.-U.; Garrido, J. A.; Stutzmann, M.

    2007-03-01

    Hydrogenated and oxidized nanocrystalline diamond (NCD) is a very promising material for future electronic, especially bioelectronic applications. In the past it has been shown that hydrogen, oxygen, and gases from the ambient environment as well as water can be responsible for causing drastic changes in surface conductivity and wettability (hydrophobicity, hydrophilicity), friction, wear, etc. In this contribution we have investigated differently prepared NCDs as function of the annealing temperature under ultrahigh vacuum conditions (UHV) with various electron spectroscopies like UPS and XPS as well as High Resolution Electron Energy Loss Spectroscopy (HREELS). We were able to identify the thermal stability of a number of different species at the interface, which are related to different characteristics of C-H, O-H, C-O, and C-C bonding. Finally, a carbonization of the interface appeared at higher annealing temperatures.

  15. Investigating the role of hydrogen in ultra-nanocrystalline diamond thin film growth

    NASA Astrophysics Data System (ADS)

    Birrell, James; Gerbi, J. E.; Auciello, O. A.; Carlisle, J. A.

    2006-08-01

    Hydrogen has long been known to be critical for the growth of high-quality microcrystalline diamond thin films as well as homoepitaxial single-crystal diamond. A hydrogen-poor growth process that results in ultra-nanocrystalline diamond thin films has also been developed, and it has been theorized that diamond growth with this gas chemistry can occur in the absence of hydrogen. This study investigates the role of hydrogen in the growth of ultra-nanocrystalline diamond thin films in two different regimes. First, we add hydrogen to the gas phase during growth, and observe that there seems to be a competitive growth process occurring between microcrystalline diamond and ultra-nanocrystalline diamond, rather than a simple increase in the grain size of ultra-nanocrystalline diamond. Second, we remove hydrogen from the plasma by changing the hydrocarbon precursor from methane to acetylene and observe that there does seem to be some sort of lower limit to the amount of hydrogen that can sustain ultra-nanocrystalline diamond growth. We speculate that this is due to the amount of hydrogen needed to stabilize the surface of the growing diamond nanocrystals.

  16. Persistent Hydrogen Production by the Photo-Assisted Microbial Electrolysis Cell Using a p-Type Polyaniline Nanofiber Cathode.

    PubMed

    Jeon, Yongwon; Kim, Sunghyun

    2016-12-08

    A microbial electrolysis cell, though considered as a promising, environmentally friendly technology for hydrogen production, suffers from concomitant production of methane. The high hydrogen/methane ratio at the initial operation stage decreases with time. Here we report for the first time the photoassisted microbial electrolysis cell (MEC) for persistent hydrogen production using polyaniline nanofibers as a cathode. Under 0.8 V external bias and laboratory fluorescent light illumination in a single-chamber MEC, continuous hydrogen production from acetate at a rate of 1.78 mH2 (3)  m(-3)  d(-1) with 79.2 % overall hydrogen recovery was achieved with negligible methane formation for six months. Energy efficiencies based on input electricity as well as input electricity plus substrate were 182 and 66.2 %, respectively. This was attributed to the p-type-semiconductor characteristics of polyaniline nanofibers in which photoexcited electrons are used to reduce protons at the surface and holes are reduced with electrons originating from acetate oxidation at the anode. This method can be extended to microbial wastewater treatment for hydrogen production.

  17. Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films

    SciTech Connect

    Yan, X. B.; Chen, Y. F.; Hao, H.; Zhang, E. P.; Shi, S. S.; Lou, J. Z.; Liu, Q.

    2014-08-18

    The hydrogenated nanocrystalline silicon (nc-Si:H) films have been fabricated as resistive switching medium by radio frequency plasma enhanced chemical vapor deposition technology. The constructed Ag/nc-Si:H/Pt structure exhibits stable three nonvolatile resistance states. Tristate resistive states with large ratio 10{sup 2} and 10{sup 5}, less variation of resistance, and long retention exceeding 2.3 × 10{sup 5 }s are observed in Ag/nc-Si:H/Pt stack. The temperature dependence of high resistance state (HRS) and intermediate resistance state (IRS) both show semiconductor behavior, and the temperature dependence of low resistance state (LRS) represents metallic property. Fitting results demonstrated that the conduction mechanism of HRS, IRS, and LRS showed space charge limited conduction (SCLC), tunneling, and ohmic characteristics, respectively. The discrete Ag filament with Si nanocrystalline and complete Ag filament is proposed to be responsible for the performance IRS and LRS. We supposed that the Ag{sup +} ions prefer to be reduced to Ag atoms near the Si nanocrystalline location. Si nanocrystalline between Ag nanoparticles contribute to the current transport at IRS.

  18. The activity of nanocrystalline Fe-based alloys as electrode materials for the hydrogen evolution reaction

    NASA Astrophysics Data System (ADS)

    Müller, Christian Immanuel; Sellschopp, Kai; Tegel, Marcus; Rauscher, Thomas; Kieback, Bernd; Röntzsch, Lars

    2016-02-01

    In view of alkaline water electrolysis, the activities for the hydrogen evolution reaction of nanocrystalline Fe-based electrode materials were investigated and compared with the activities of polycrystalline Fe and Ni. Electrochemical methods were used to elucidate the overpotential value, the charge transfer resistance and the double layer capacity. Structural properties of the electrode surface were determined with SEM, XRD and XPS analyses. Thus, a correlation between electrochemical and structural parameters was found. In this context, we report on a cyclic voltammetric activation procedure which causes a significant increase of the surface area of Fe-based electrodes leading to a boost in effective activity of the activated electrodes. It was found that the intrinsic activity of activated Fe-based electrodes is very high due to the formation of a nanocrystalline surface layer. In contrast, the activation procedure influences only the intrinsic activity of the Ni electrodes without the formation of a porous surface layer.

  19. Role of Grain Boundaries in the Mechanism of Plasma Hydrogenation of Nanocrystalline MgAl Films

    SciTech Connect

    Milcius, Darius; Pranevicius, Liudas; Templier, Claude; Bobrovaite, Birute; Barnackas, Irmantas

    2006-05-24

    Nanocrystalline aluminum hydrides (alanates) are potential hydrogen storage materials for PEM fuel cell applications. One of candidates is magnesium alanate, Mg(AlH4)2, which contains 9.3 wt. % of hydrogen. In the present work, the effects of Ti catalyst in improving the kinetics of hydrogen uptake and release are investigated. The 2-5 {mu}m thick MgAl films have been hydrogenated employing plasma immersion ion implantation technique as a function of Ti-content. Nanocrystalline MgAl films were prepared by magnetron sputter deposition in vacuum. Titanium atoms were incorporated simultaneously into the growing film. Morphological and structural properties were studied by scanning electron and atomic force microcopies and X-ray diffraction technique. It is shown that the microstructure of the hydrided/dehydrided MgAl film is highly defected and demonstrates dispersed/amorphous cluster-like structure. Ti atoms in MgAl film kinetically enhance the dehydrogenation of magnesium alanate film. For Ti-doped MgAl film the dehydrogenation process becomes about 1.5 times shorter and the dehydrogenation temperature about 50 K less than for Ti-undoped film for the temperature rise rate equal to 18 K-min-1. It is shown when hydrogenated MgAl film is exposed to air a compact amorphous Al2O3 layer with typically 3-5 nm thickness grows on the surface. Thin native oxide acts as a permeation barrier for hydrogen. It has been found that the major part of hydrogen effuses at {approx}630 K and the effusion process is controlled by the migration of hydrogen through the surface oxide layer.

  20. Solar hydrogen generation by nanoscale p-n junction of p-type molybdenum disulfide/n-type nitrogen-doped reduced graphene oxide.

    PubMed

    Meng, Fanke; Li, Jiangtian; Cushing, Scott K; Zhi, Mingjia; Wu, Nianqiang

    2013-07-17

    Molybdenum disulfide (MoS2) is a promising candidate for solar hydrogen generation but it alone has negligible photocatalytic activity. In this work, 5-20 nm sized p-type MoS2 nanoplatelets are deposited on the n-type nitrogen-doped reduced graphene oxide (n-rGO) nanosheets to form multiple nanoscale p-n junctions in each rGO nanosheet. The p-MoS2/n-rGO heterostructure shows significant photocatalytic activity toward the hydrogen evolution reaction (HER) in the wavelength range from the ultraviolet light through the near-infrared light. The photoelectrochemical measurement shows that the p-MoS2/n-rGO junction greatly enhances the charge generation and suppresses the charge recombination, which is responsible for enhancement of solar hydrogen generation. The p-MoS2/n-rGO is an earth-abundant and environmentally benign photocatalyst for solar hydrogen generation.

  1. Tuning oxygen impurities and microstructure of nanocrystalline silicon photovoltaic materials through hydrogen dilution.

    PubMed

    Wen, Chao; Xu, Hao; He, Wei; Li, Zhengping; Shen, Wenzhong

    2014-01-01

    As a great promising material for third-generation thin-film photovoltaic cells, hydrogenated nanocrystalline silicon (nc-Si:H) thin films have a complex mixed-phase structure, which determines its defectful nature and easy residing of oxygen impurities. We have performed a detailed investigation on the microstructure properties and oxygen impurities in the nc-Si:H thin films prepared under different hydrogen dilution ratio treatment by the plasma-enhanced chemical vapor deposition (PECVD) process. X-ray diffraction, transmission electron microscopy, Raman spectroscopy, and optical transmission spectroscopy have been utilized to fully characterize the microstructure properties of the nc-Si:H films. The oxygen and hydrogen contents have been obtained from infrared absorption spectroscopy. And the configuration state of oxygen impurities on the surface of the films has been confirmed by X-ray photoelectron spectroscopy, indicating that the films were well oxidized in the form of SiO2. The correlation between the hydrogen content and the volume fraction of grain boundaries derived from the Raman measurements shows that the majority of the incorporated hydrogen is localized inside the grain boundaries. Furthermore, with the detailed information on the bonding configurations acquired from the infrared absorption spectroscopy, a full explanation has been provided for the mechanism of the varying microstructure evolution and oxygen impurities based on the two models of ion bombardment effect and hydrogen-induced annealing effect.

  2. Tuning oxygen impurities and microstructure of nanocrystalline silicon photovoltaic materials through hydrogen dilution

    PubMed Central

    2014-01-01

    As a great promising material for third-generation thin-film photovoltaic cells, hydrogenated nanocrystalline silicon (nc-Si:H) thin films have a complex mixed-phase structure, which determines its defectful nature and easy residing of oxygen impurities. We have performed a detailed investigation on the microstructure properties and oxygen impurities in the nc-Si:H thin films prepared under different hydrogen dilution ratio treatment by the plasma-enhanced chemical vapor deposition (PECVD) process. X-ray diffraction, transmission electron microscopy, Raman spectroscopy, and optical transmission spectroscopy have been utilized to fully characterize the microstructure properties of the nc-Si:H films. The oxygen and hydrogen contents have been obtained from infrared absorption spectroscopy. And the configuration state of oxygen impurities on the surface of the films has been confirmed by X-ray photoelectron spectroscopy, indicating that the films were well oxidized in the form of SiO2. The correlation between the hydrogen content and the volume fraction of grain boundaries derived from the Raman measurements shows that the majority of the incorporated hydrogen is localized inside the grain boundaries. Furthermore, with the detailed information on the bonding configurations acquired from the infrared absorption spectroscopy, a full explanation has been provided for the mechanism of the varying microstructure evolution and oxygen impurities based on the two models of ion bombardment effect and hydrogen-induced annealing effect. PMID:24994958

  3. Hydrogen storage properties of nanocrystalline Mg-Ce/Ni composite

    NASA Astrophysics Data System (ADS)

    Wang, X. L.; Tu, J. P.; Wang, C. H.; Zhang, X. B.; Chen, C. P.; Zhao, X. B.

    Mg-Ce alloy was prepared by induction melting under vacuum, hydrided firstly and then Mg-Ce/Ni composite was obtained by mechanical milling Mg-Ce hydrides under Ar for 50 h with addition of nano-sized Ni powder. XRD results showed CeMg 12 formed in melted alloy. CeMg 12 disappeared and CeH 2.53 emerged during subsequent hydriding. The phase composition was not changed during ball milling process. Compared with Mg and Mg/Ni, Mg-Ce/Ni composite showed significant hydriding/dehydriding performance without any prior activation. The enthalpy of hydride formation for Mg-10.9 wt.% Ce/10 wt.% Ni composite was -70.58 kJ mol -1 H 2. Improved hydrogen storage properties were attributed to the catalytic effect of addition of nano-sized Ni particles and existence of CeH 2.53, as well as the grain refinement, defects, etc. in the material introduced by ball milling process.

  4. Nuclear-magnetic-resonance measurements of the hydrogen dynamics in nanocrystalline graphite

    NASA Astrophysics Data System (ADS)

    Stanik, E.; Majer, G.; Orimo, S.; Ichikawa, T.; Fujii, H.

    2005-08-01

    Hydrogen-loaded nanocrystalline graphite samples have been prepared by mechanical milling under a hydrogen atmosphere. Milling vials and balls made of agate and ZrO2 have been used to prepare samples with hydrogen contents between 1 and 2wt%. The proton nuclear-magnetic-resonance (H1-NMR) spectra of these samples are well represented by the sum of a broad Gaussian and a more narrow Lorentzian line corresponding to hydrogen in C-H covalent bonds as well as to hydrogen in methyl groups. The temperature dependence of the Lorentzian line can be ascribed to a hindered rotation of the methyl groups. The corresponding activation enthalpy of about 0.12eV has been deduced from the spin-lattice relaxation rates between 250 and 450K. Below about 200K the relaxation rates are temperature independent but they depend strongly on the NMR frequency and on the parameters of the sample preparation. The relaxation due to paramagnetic impurities as well as the cross relaxation of the proton spins with spins of quadrupolar impurity nuclei are proposed to contribute significantly to the measured spin-lattice relaxation rates.

  5. Investigation of bonded hydrogen defects in nanocrystalline diamond films grown with nitrogen/methane/hydrogen plasma at high power conditions

    NASA Astrophysics Data System (ADS)

    Tang, C. J.; Hou, Haihong; Fernandes, A. J. S.; Jiang, X. F.; Pinto, J. L.; Ye, H.

    2017-02-01

    In this work, we investigate the influence of some growth parameters such as high microwave power ranging from 3.0 to 4.0 kW and N2 additive on the incorporation of bonded hydrogen defects in nanocrystalline diamond (NCD) films grown through a small amount of pure N2 addition into conventional 4% CH4/H2 plasma using a 5 kW microwave plasma CVD system. Incorporation form and content of hydrogen point defects in the NCD films produced with pure N2 addition was analyzed by employing Fourier-transform infrared (FTIR) spectroscopy for the first time. A large amount of hydrogen related defects was detected in all the produced NCD films with N2 additive ranging from 29 to 87 μm thick with grain size from 47 nm to 31 nm. Furthermore, a specific new H related sharp absorption peak appears in all the NCD films grown with pure N2/CH4/H2 plasma at high powers and becomes stronger at powers higher than 3.0 kW and is even stronger than the 2920 cm-1 peak, which is commonly found in CVD diamond films. Based on these experimental findings, the role of high power and pure nitrogen addition on the growth of NCD films including hydrogen defect formation is analyzed and discussed.

  6. Photogating effect as a defect probe in hydrogenated nanocrystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Li, Hongbo B. T.; Schropp, Ruud E. I.; Rubinelli, Francisco A.

    2010-07-01

    The measurement of the spectrally resolved collection efficiency is of great importance in solar cell characterization. Under standard conditions the bias light is a solar simulator or a light source with a similar broadband irradiation spectrum. When a colored blue or red bias light is used instead, an enhanced collection efficiency effect, in the literature known as the photogating effect, can be observed under certain conditions. While most of the published reports on such effect were on solar cells with amorphous silicon based absorber layers, we have shown that the enhanced collection efficiency could be also present in thin film silicon solar cells where hydrogenated nanocrystalline silicon (nc-Si:H) is used as the absorber layer. In this article we present detailed experimental results and simulations aiming at a better understanding of this phenomenon. We show that the collection efficiency is strongly dependent on the intensity of bias light and the intensity of the monochromatic light. These experimental results are consistent with the computer predictions made by our code. We also show that the photogating effect is greatly enhanced when nanocrystalline silicon cells are built with an improperly doped p-layer or with a defective p/i interface region due to the reduced internal electric field present in such cells. The existence of this effect further proves that carrier transport in a nc-Si:H solar cell with an i-layer made close to the phase transition regime is influenced to a large extent by drift transport. The study of this effect is proposed as an alternative approach to gain a deeper understanding about the carrier transport scenarios in thin film solar cells, especially nanocrystalline silicon solar cells.

  7. Synthesis of Nanocrystalline SnO2 Microspheres and Their Hydrogen Absorption Characteristics.

    PubMed

    Wang, Zhiyuan; Wang, Fengping; Li, Mingyan; Iqbal, M Zubair; Javed, Qurat-Ul-Ain; Lu, Yanzhen; Xu, Mei; Li, Quanshui

    2015-02-01

    SnO2 solid microspheres and multilayered nanocrystalline SnO2 hollow microspheres (MHS-SnO2) have been successfully synthesized in the solvothermal environment by using different solvents. The morphology, structure and composition of the as-prepared products are characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM) with selected area electron diffraction (SAED) and X-ray diffraction (XRD). The growth mechanism of SnO2 solid microspheres and MHS-SnO2 are proposed and attributed to the viscosity of solvent. The studies on hydrogen absorption characteristics of SnO2 solid structure and MHS-SnO2 show an absorption capability of 0.50 wt.% and 0.92 wt.%, respectively.

  8. Relationship of deep defects to oxygen and hydrogen content in nanocrystalline silicon photovoltaic materials

    SciTech Connect

    Hugger, Peter G.; Cohen, J. David; Yan Baojie; Yue Guozhen; Yang, Jeffrey; Guha, Subhendu

    2010-12-20

    We report measurements of the structural and compositional properties of a range of hydrogenated nanocrystalline films. We employed Raman spectroscopy for crystallinity and time-of-flight secondary ion mass spectroscopy (TOF-SIMS) for impurity characterizations. The crystalline volume fractions and impurity levels are correlated with the deep state densities determined by drive level capacitance profiling. Those defects were found to have a thermal emission energy of 0.65{+-}.05 eV. We found that the overall crystallinity correlated reasonably well with the density of such defect states and also found a strong correlation between the defect density and the levels of oxygen impurities. Possible origins of these defects are discussed.

  9. Enhancement of hydrogen gas sensing of nanocrystalline nickel oxide by pulsed-laser irradiation.

    PubMed

    Soleimanpour, A M; Khare, Sanjay V; Jayatissa, Ahalapitiya H

    2012-09-26

    This paper reports the effect of post-laser irradiation on the gas-sensing behavior of nickel oxide (NiO) thin films. Nanocrystalline NiO semiconductor thin films were fabricated by a sol-gel method on a nonalkaline glass substrate. The NiO samples were irradiated with a pulsed 532-nm wavelength, using a Nd:YVO(4) laser beam. The effect of laser irradiation on the microstructure, electrical conductivity, and gas-sensing properties was investigated as a function of laser power levels. It was found that the crystallinity and surface morphology were modified by the pulsed-laser irradiation. Hydrogen gas sensors were fabricated using both as-deposited and laser-irradiated NiO films. It was observed that the performance of gas-sensing characteristics could be changed by the change of laser power levels. By optimizing the magnitude of the laser power, the gas-sensing property of NiO thin film was improved, compared to that of as-deposited NiO films. At the optimal laser irradiation conditions, a high response of NiO sensors to hydrogen molecule exposure of as little as 2.5% of the lower explosion threshold of hydrogen gas (40,000 ppm) was observed at 175 °C.

  10. P-type Cu--Ti--O nanotube arrays and their use in self-biased heterojunction photoelectrochemical diodes for hydrogen generation.

    PubMed

    Mor, Gopal K; Varghese, Oomman K; Wilke, Rudeger H T; Sharma, Sanjeev; Shankar, Karthik; Latempa, Thomas J; Choi, Kyoung-Shin; Grimes, Craig A

    2008-07-01

    Copper and titanium remain relatively plentiful in the earth's crust; hence, their use for large-scale solar energy conversion technologies is of significant interest. We describe fabrication of vertically oriented p-type Cu-Ti-O nanotube array films by anodization of copper rich (60% to 74%) Ti metal films cosputtered onto fluorine doped tin oxide (FTO) coated glass. Cu-Ti-O nanotube array films 1 mum thick exhibit external quantum efficiencies up to 11%, with a spectral photoresponse indicating that the complete visible spectrum, 380 to 885 nm, contributes significantly to the photocurrent generation. Water-splitting photoelectrochemical pn-junction diodes are fabricated using p-type Cu-Ti-O nanotube array films in combination with n-type TiO 2 nanotube array films. With the glass substrates oriented back-to-back, light is incident upon the UV absorbing n-TiO 2 side, with the visible light passing to the p-Cu-Ti-O side. In a manner analogous to photosynthesis, photocatalytic reactions are powered only by the incident light to generate fuel with oxygen evolved from the n-TiO 2 side of the diode and hydrogen from the p-Cu-Ti-O side. To date, we find under global AM 1.5 illumination that such photocorrosion-stable diodes generate a photocurrent of approximately 0.25 mA/cm (2), at a photoconversion efficiency of 0.30%.

  11. Preparation and electrocatalytic activity of nanocrystalline Ni-Mo-Co alloy electrode for hydrogen evolution.

    PubMed

    Xu, Lijian; Du, Jingjing; Chen, Baizhen

    2013-03-01

    Ni-Mo-Co alloy electrodes were prepared by electrodeposition technique with citric acid as a complexing agent. The influence of the main technical parameters such as the concentration of CoSO4 7H2O, the current density and the bath temperature on the component content in the Ni-Mo-Co alloy electrode were investigated by electron dispersive spectrometer (EDS), the microstructure and surface morphology of Ni-Mo-Co alloy electrodes were characterized by employing X-ray diffractometer (XRD) and scanning electron microscope (SEM), and the electrocatalytic activity of Ni-Mo-Co alloy electrode for hydrogen evolution was investigated by the method of the cathode polarization curves. The results showed that the excellent Ni-Mo-Co alloy electrode with 41.39 wt% Ni, 53.82 wt% Mo and 4.79 wt% Co was obtained when the concentration of CoSO4 x 7H2O was 8 g/L, the current density was 12 A/dm2 and the bath temperature was 25 degrees C. The mircostructure of the Ni-Mo-Co alloy was nanocrystalline and the average grain size was about 25 nm by calculating using Scherrer Equation. The electrocatalytic activity of Ni-Mo-Co alloy electrode for hydrogen evolution was better than that of Ni-Mo alloy electrode.

  12. Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam

    SciTech Connect

    Takashiri, Masayuki Imai, Kazuo; Uyama, Masato; Nishi, Yoshitake; Hagino, Harutoshi; Miyazaki, Koji; Tanaka, Saburo

    2014-06-07

    The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17 MeV. For the n-type thin films, nanodots with a diameter of less than 10 nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improved by EB irradiation. The different crystallization behavior of the n-type and p-type thin films is attributed to atomic rearrangement during EB irradiation. Selenium in the n-type thin films is more likely to undergo atomic rearrangement than the other atoms present, so only the crystallinity of the n-type Bi-Se-Te thin films was enhanced.

  13. Atomistic simulations of the effect of embedded hydrogen and helium on the tensile properties of monocrystalline and nanocrystalline tungsten

    NASA Astrophysics Data System (ADS)

    Chen, Zhe; Kecskes, Laszlo J.; Zhu, Kaigui; Wei, Qiuming

    2016-12-01

    Uniaxial tensile properties of monocrystalline tungsten (MC-W) and nanocrystalline tungsten (NC-W) with embedded hydrogen and helium atoms have been investigated using molecular dynamics (MD) simulations in the context of radiation damage evolution. Different strain rates have been imposed to investigate the strain rate sensitivity (SRS) of the samples. Results show that the plastic deformation processes of MC-W and NC-W are dominated by different mechanisms, namely dislocation-based for MC-W and grain boundary-based activities for NC-W, respectively. For MC-W, the SRS increases and a transition appears in the deformation mechanism with increasing embedded atom concentration. However, no obvious embedded atom concentration dependence of the SRS has been observed for NC-W. Instead, in the latter case, the embedded atoms facilitate GB sliding and intergranular fracture. Additionally, a strong strain enhanced He cluster growth has been observed. The corresponding underlying mechanisms are discussed.

  14. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    SciTech Connect

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-11-14

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  15. Modification of Charge Trapping at Particle/Particle Interfaces by Electrochemical Hydrogen Doping of Nanocrystalline TiO2

    PubMed Central

    2016-01-01

    Particle/particle interfaces play a crucial role in the functionality and performance of nanocrystalline materials such as mesoporous metal oxide electrodes. Defects at these interfaces are known to impede charge separation via slow-down of transport and increase of charge recombination, but can be passivated via electrochemical doping (i.e., incorporation of electron/proton pairs), leading to transient but large enhancement of photoelectrode performance. Although this process is technologically very relevant, it is still poorly understood. Here we report on the electrochemical characterization and the theoretical modeling of electron traps in nanocrystalline rutile TiO2 films. Significant changes in the electrochemical response of porous films consisting of a random network of TiO2 particles are observed upon the electrochemical accumulation of electron/proton pairs. The reversible shift of a capacitive peak in the voltammetric profile of the electrode is assigned to an energetic modification of trap states at particle/particle interfaces. This hypothesis is supported by first-principles theoretical calculations on a TiO2 grain boundary, providing a simple model for particle/particle interfaces. In particular, it is shown how protons readily segregate to the grain boundary (being up to 0.6 eV more stable than in the TiO2 bulk), modifying its structure and electron-trapping properties. The presence of hydrogen at the grain boundary increases the average depth of traps while at the same time reducing their number compared to the undoped situation. This provides an explanation for the transient enhancement of the photoelectrocatalytic activity toward methanol photooxidation which is observed following electrochemical hydrogen doping of rutile TiO2 nanoparticle electrodes. PMID:27960341

  16. Modification of Charge Trapping at Particle/Particle Interfaces by Electrochemical Hydrogen Doping of Nanocrystalline TiO2.

    PubMed

    Jiménez, Juan M; Bourret, Gilles R; Berger, Thomas; McKenna, Keith P

    2016-12-14

    Particle/particle interfaces play a crucial role in the functionality and performance of nanocrystalline materials such as mesoporous metal oxide electrodes. Defects at these interfaces are known to impede charge separation via slow-down of transport and increase of charge recombination, but can be passivated via electrochemical doping (i.e., incorporation of electron/proton pairs), leading to transient but large enhancement of photoelectrode performance. Although this process is technologically very relevant, it is still poorly understood. Here we report on the electrochemical characterization and the theoretical modeling of electron traps in nanocrystalline rutile TiO2 films. Significant changes in the electrochemical response of porous films consisting of a random network of TiO2 particles are observed upon the electrochemical accumulation of electron/proton pairs. The reversible shift of a capacitive peak in the voltammetric profile of the electrode is assigned to an energetic modification of trap states at particle/particle interfaces. This hypothesis is supported by first-principles theoretical calculations on a TiO2 grain boundary, providing a simple model for particle/particle interfaces. In particular, it is shown how protons readily segregate to the grain boundary (being up to 0.6 eV more stable than in the TiO2 bulk), modifying its structure and electron-trapping properties. The presence of hydrogen at the grain boundary increases the average depth of traps while at the same time reducing their number compared to the undoped situation. This provides an explanation for the transient enhancement of the photoelectrocatalytic activity toward methanol photooxidation which is observed following electrochemical hydrogen doping of rutile TiO2 nanoparticle electrodes.

  17. Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Wienkes, Lee Raymond

    Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

  18. Proton-Conducting Nanocrystalline Ceramics for High-Temperature Hydrogen Sensing

    NASA Astrophysics Data System (ADS)

    Tang, Xiling; Xu, Zhi; Trontz, Adam; Jing, Wenheng; Dong, Junhang

    2014-03-01

    The proton-conductive doped ceramic materials, including SrCe0.95Tb0.05O3- δ (SCTb), SrCe0.8Zr0.1Y0.1O3- δ (SCZY), and SrZr0.95Y0.05O3- δ (SZY), are synthesized in the forms of nanoparticles and nanocrystalline thin films on sapphire wafers and long-period grating (LPG) fibers. The H2 chemisorption and electrical conductivity of the nanocrystalline SCTb, SCZY, and SZY materials are measured at high temperature with and without the presence of CO2 gas. The resonant wavelength shifts ( δ λ_{{{{R,H}}_{ 2} }} ) of the SCTb, SCZY, and SZY thin-film coated LPGs in response to H2 concentration changes are studied in gas mixtures relevant to coal gasification syngas to evaluate their potential for high-temperature H2 detection. The results show that, at around 773.15 K (500 °C), SCTb has the highest H2 sensitivity but the most severe interferences from impurities such as CO2 and H2S; SZY has the best chemical resistance to impurities but the lowest H2 sensitivity; and SCZY exhibits high H2 sensitivity with reasonable chemical resistance.

  19. Impact of high microwave power on hydrogen impurity trapping in nanocrystalline diamond films grown with simultaneous nitrogen and oxygen addition into methane/hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Tang, C. J.; Fernandes, A. J. S.; Jiang, X. F.; Pinto, J. L.; Ye, H.

    2016-01-01

    In this work, we study for the first time the influence of microwave power higher than 2.0 kW on bonded hydrogen impurity incorporation (form and content) in nanocrystalline diamond (NCD) films grown in a 5 kW MPCVD reactor. The NCD samples of different thickness ranging from 25 to 205 μm were obtained through a small amount of simultaneous nitrogen and oxygen addition into conventional about 4% methane in hydrogen reactants by keeping the other operating parameters in the same range as that typically used for the growth of large-grained polycrystalline diamond films. Specific hydrogen point defect in the NCD films is analyzed by using Fourier-transform infrared (FTIR) spectroscopy. When the other operating parameters are kept constant (mainly the input gases), with increasing of microwave power from 2.0 to 3.2 kW (the pressure was increased slightly in order to stabilize the plasma ball of the same size), which simultaneously resulting in the rise of substrate temperature more than 100 °C, the growth rate of the NCD films increases one order of magnitude from 0.3 to 3.0 μm/h, while the content of hydrogen impurity trapped in the NCD films during the growth process decreases with power. It has also been found that a new H related infrared absorption peak appears at 2834 cm-1 in the NCD films grown with a small amount of nitrogen and oxygen addition at power higher than 2.0 kW and increases with power higher than 3.0 kW. According to these new experimental results, the role of high microwave power on diamond growth and hydrogen impurity incorporation is discussed based on the standard growth mechanism of CVD diamonds using CH4/H2 gas mixtures. Our current experimental findings shed light into the incorporation mechanism of hydrogen impurity in NCD films grown with a small amount of nitrogen and oxygen addition into methane/hydrogen plasma.

  20. Effect of air-pressure on room temperature hydrogen sensing characteristics of nanocrystalline doped tin oxide MEMS-based sensor.

    PubMed

    Shukla, Satyajit; Ludwig, Lawrence; Cho, Hyoung J; Duarte, Julian; Seal, Sudipta

    2005-11-01

    Nanocrystalline indium oxide (In2O3)-doped tin oxide (SnO2) thin film sensor has been sol-gel dip-coated on a microelectrochemical system (MEMS) device using a sol-gel dip-coating technique. Hydrogen (H2) at ppm-level has been successfully detected at room temperature using the present MEMS-based sensor. The room temperature H2 sensing characteristics (sensitivity, response and recovery time, and recovery rate) of the present MEMS-based sensor has been investigated as a function of air-pressure (50-600 Torr) with and without the ultraviolet (UV) radiation exposure. It has been demonstrated that, the concentration of the surface-adsorbed oxygen-ions (which is related to the sensor-resistance in air), the ppm-level H2, and the oxygen (O2) partial pressure are the three major factors, which determine the variation in the room temperature H2 sensing characteristics of the present MEMS-based sensor as a function of air-pressure.

  1. Effect of grain boundary on nanoscale electronic properties of hydrogenated nanocrystalline silicon studied by Kelvin probe force microscopy

    NASA Astrophysics Data System (ADS)

    Priti, Rubana B.; Mahat, Sandeep; Bommisetty, Venkat

    2013-03-01

    Hydrogenated nanocrystalline silicon (nc-Si:H) based alloys have strong potential in cost-effective and flexible photovoltaics. However, nc-Si:H undergoes light induced degradation (LID), which degrades the device efficiency by over 15%. The microstructural processes responsible for the LID are still under debate. Several recent studies suggest that the generation of metastable defects at grain/ grain-boundary (GB) interface enhances density of traps, which limits the charge collection efficiency. Conventional characterization techniques can measure transport properties such as electrical conductivity or carrier mobility averaged over large sample volumes. However, nanoscale characterization tools, such as Scanning Kelvin probe Force Microscopy (KFM), reveal local electronic properties of grains and GBs which may lead to better understanding of microscopic process of metastability. The optoelectronic properties of nc-Si:H films were measured in dark and under illumination to study the effect of LID at the nanoscale. The surface potential and charge distribution were measured in as-deposited and photo-degraded samples using a custom-designed scanning probe microscopy tool installed in an environment controlled glove-box. Photodegradation resulted in an upward bending of the conduction band edge, suggesting accumulation of photo-generated charges at GBs. This effect is attributed to the generation of acceptor like defects (traps) at GBs during illumination. Density of defects is estimated from grain/GB width and absolute value of band bending.

  2. Highly improved hydrogen storage capacity and kinetics of the nanocrystalline and amorphous PrMg12-type alloys by mechanical milling

    NASA Astrophysics Data System (ADS)

    Zhang, Y. H.; Shang, H. W.; Li, Y. Q.; Yuan, Z. M.; Yang, T.; Zhao, D. L.

    2017-01-01

    Nanocrystalline and amorphous PrMg11Ni + x wt.% Ni (x = 100, 200) alloys were synthesized by mechanical milling. Effects of Ni content and milling duration on the structures, hydrogen storage capacity and kinetics of the as-milled alloys were investigated systematically. The structures were characterized by XRD and HRTEM. The hydrogen desorption activation energy was calculated by using Kissinger method. The results show that increasing Ni content dramatically improves the electrochemical discharge capacity of the as-milled alloys. Furthermore, the variation of milling time has a significant impact on the kinetics of the alloys. As the milling time increased, the high-rate discharge ability (HRD), gaseous hydrogen absorption capacity and hydrogenation rate increased at first but decreased finally, while the dehydrogenation rate always increased.

  3. Studies on the de/re-hydrogenation characteristics of nanocrystalline MgH2 admixed with carbon nanofibres

    NASA Astrophysics Data System (ADS)

    Shahi, Rohit R.; Raghubanshi, Himanshu; Shaz, M. A.; Srivastava, O. N.

    2012-09-01

    In the present investigation, we have synthesized different morphologies of carbon nanofibres (CNFs) to investigate their catalytic effect on the hydrogenation characteristics of 25 h ball-milled MgH2 (nano MgH2). The TEM analysis reveals that 25 h of ball-milling leads to the formation of nanocrystalline particles with size ranging between 10 and 20 nm. Different morphologies of CNFs were synthesized by catalytic thermal decomposition of acetylene (C2H2) gas over LaNi5 alloy. Helical carbon nanofibers (HCNFs) were formed at a temperature 650 °C. By increasing the synthesis temperature to 750 °C, planar carbon nanofibres were formed. In order to explore the effectiveness of CNFs towards lowering the decomposition temperature, TPD experiments (at heating rate 5 °C/min) were performed for nano MgH2 with and without CNFs. It was found that the decomposition temperature is reduced to ~334 and ~300 °C from 367 °C for the PCNF and HCNF catalysed nano MgH2. It is also found that HCNF admixed nano MgH2 absorbs ~5.25 wt% within 10 min as compared with pristine nano MgH2, which absorbs only ~4.2 % within the same time and same condition of temperature and pressure. Thus the HCNF possesses better catalytic activity than PCNF. These different levels of improvement in hydrogenation properties of HCNF catalysed nano MgH2 is attributed to the morphology of the CNFs.

  4. Hydrogen Storage Characteristics of Nanocrystalline and Amorphous Nd-Mg-Ni-Based NdMg12-Type Alloys Synthesized via Mechanical Milling

    NASA Astrophysics Data System (ADS)

    Zhang, Yanghuan; Shang, Hongwei; Hou, Zhonghui; Yuan, Zeming; Yang, Tai; Qi, Yan

    2016-12-01

    In this study, Mg was partially substituted by Ni with the intent of improving the hydrogen storage kinetics performance of NdMg12-type alloy. Mechanical milling technology was adopted to fabricate the nanocrystalline and amorphous NdMg11Ni + x wt pct Ni ( x = 100, 200) alloys. The effects of Ni content and milling duration on the microstructures and hydrogen storage kinetics of as-milled alloys have been systematically investigated. The structures were characterized by XRD and HRTEM. The electrochemical hydrogen storage properties were tested by an automatic galvanostatic system. Moreover, the gaseous hydrogen storage properties were investigated by Sievert apparatus and a differential scanning calorimeter connected with a H2 detector. Hydrogen desorption activation energy of alloy hydrides was estimated by using Arrhenius and Kissinger methods. The results reveal that the increase of Ni content dramatically ameliorates the gaseous and electrochemical hydrogen storage kinetics performance of the as-milled alloys. Furthermore, high rate discharge ability (HRD) reach the maximum value with the variation of milling time. The maximum HRDs of the NdMg11Ni + x wt pct Ni ( x = 100, 200) alloys are 80.24 and 85.17 pct. The improved gaseous hydrogen storage kinetics of alloys via increasing Ni content and milling time can be attributed to a decrease in the hydrogen desorption activation energy.

  5. Viral-templated nanocrystalline Pd nanowires for chemiresistive hydrogen (H2) sensors

    NASA Astrophysics Data System (ADS)

    Moon, Chung Hee; Yan, Yiran; Zhang, Miluo; Myung, Nosang V.; Haberer, Elaine D.

    2014-08-01

    A palladium (Pd) nanowire-based hydrogen (H2) sensor has been fabricated with a novel viral-templated assembly route. A filamentous M13 bacteriophage was used as the viral-template for assembly of Pd nanowires at ambient conditions. Scanning electron microscopy determined Pd nanowire distribution and morphology with the devices. The phage template concentration controlled the number of physical and electrical nanowire connections across the device. A greater phage concentration resulted in a higher connection density and thicker Pd deposition. A lower phage concentration generated devices which formed chain-like nanowires of Pd nanocrystals, whereas a higher phage concentration formed devices with a continuous mesh-like structure. The lower concentration devices showed 51-78% instantaneous response to 2000 ppm H2 and response time less than 30 s.

  6. Ultrafine Nanocrystalline CeO2@C-Containing NaAlH4 with Fast Kinetics and Good Reversibility for Hydrogen Storage.

    PubMed

    Zhang, Xin; Liu, Yongfeng; Wang, Ke; Li, You; Gao, Mingxia; Pan, Hongge

    2015-12-21

    A nanocrystalline CeO2@C-containing NaAlH4 composite is successfully synthesized in situ by hydrogenating a NaH-Al mixture doped with CeO2@C. Compared with NaAlH4 , the as-prepared CeO2@C-containing NaAlH4 composite, with a minor amount of excess Al, exhibits significantly improved hydrogen storage properties. The dehydrogenation onset temperature of the hydrogenated [NaH-Al-7 wt % CeO2@C]-0.04Al sample is 77 °C lower than that of the pristine sample because of a reduced kinetic barrier. More importantly, the dehydrogenated sample absorbs ∼4.7 wt % hydrogen within 35 min at 100°C and 10 MPa of hydrogen. Compositional and structural analyses reveal that CeO2 is converted to CeH2 during ball milling and that the newly formed CeH2 works with the excess of Al to synergistically improve the hydrogen storage properties of NaAlH4. Our findings will aid in the rational design of novel catalyst-doped complex hydride systems with low operating temperatures, fast kinetics, and long-term cyclability.

  7. Highly sensitive hydrogen sulfide (H2 S) gas sensors from viral-templated nanocrystalline gold nanowires

    NASA Astrophysics Data System (ADS)

    Moon, Chung Hee; Zhang, Miluo; Myung, Nosang V.; Haberer, Elaine D.

    2014-04-01

    A facile, site-specific viral-templated assembly method was used to fabricate sensitive hydrogen sulfide (H2S) gas sensors at room temperature. A gold-binding M13 bacteriophage served to organize gold nanoparticles into linear arrays which were used as seeds for subsequent nanowire formation through electroless deposition. Nanowire widths and densities within the sensors were modified by electroless deposition time and phage concentration, respectively, to tune device resistance. Chemiresistive H2S gas sensors with superior room temperature sensing performance were produced with sensitivity of 654%/ppmv, theoretical lowest detection limit of 2 ppbv, and 70% recovery within 9 min for 0.025 ppmv. The role of the viral template and associated gold-binding peptide was elucidated by removing organics using a short O2 plasma treatment followed by an ethanol dip. The template and gold-binding peptide were crucial to electrical and sensor performance. Without surface organics, the resistance fell by several orders of magnitude, the sensitivity dropped by more than a factor of 100 to 6%/ppmv, the lower limit of detection increased, and no recovery was detected with dry air flow. Viral templates provide a novel, alternative fabrication route for highly sensitive, nanostructured H2S gas sensors.

  8. Preparation and Catalytic Activity of a Novel Nanocrystalline ZrO2 @C Composite for Hydrogen Storage in NaAlH4.

    PubMed

    Zhang, Xin; Wu, Ruyan; Wang, Zeyi; Gao, Mingxia; Pan, Hongge; Liu, Yongfeng

    2016-12-19

    Sodium alanate (NaAlH4 ) has attracted intense interest as a prototypical high-density hydrogen-storage material. However, poor reversibility and slow kinetics limit its practical applications. Herein, a nanocrystalline ZrO2 @C catalyst was synthesized by using Uio-66(Zr) as a precursor and furfuryl alcohol (FA) as a carbon source. The as-synthesized ZrO2 @C exhibits good catalytic activity for the dehydrogenation and hydrogenation of NaAlH4 . The NaAlH4 -7 wt % ZrO2 @C sample released hydrogen starting from 126 °C and reabsorbed it starting from 54 °C, and these temperatures are lower by 71 and 36 °C, respectively, relative to pristine NaAlH4 . At 160 °C, approximately 5.0 wt % of hydrogen was released from the NaAlH4 -7 wt % ZrO2 @C sample within 250 min, and the dehydrogenation product reabsorbed approximately 4.9 wt % within 35 min at 140 °C and 100 bar of hydrogen. The catalytic function of the Zr-based active species is believed to contribute to the significantly reduced operating temperatures and enhanced kinetics.

  9. P-type gallium nitride

    DOEpatents

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  10. P-type gallium nitride

    DOEpatents

    Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  11. p-Type Transparent Electronics

    DTIC Science & Technology

    2003-09-25

    semiconductor surface heavily doped ...successfully doped both n-type and p-type. 2.1.3 CuInO2 CuInO2 is a particularly interesting transparent conductor because it has been successfully doped ...integra- tion. CuInO2 is doped n-type by the replacement of In 3+ with Sn4+, and p-type by the replacement of In3+ with Ca2+. Neither n-CuInO2 nor p-CuInO2

  12. Studies on the sensing behaviour of nanocrystalline CuGa(2)O(4) towards hydrogen, liquefied petroleum gas and ammonia.

    PubMed

    Biswas, Soumya Kanti; Sarkar, Arpita; Pathak, Amita; Pramanik, Panchanan

    2010-06-15

    In the present article, the gas sensing behaviour of nanocrystalline CuGa(2)O(4) towards H(2), liquefied petroleum gas (LPG) and NH(3) has been reported for the first time. Nanocrystalline powders of CuGa(2)O(4) having average particle sizes in the range of 30-60nm have been prepared through thermal decomposition of an aqueous precursor solution comprising copper nitrate, gallium nitrate and triethanol amine (TEA), followed by calcination at 750 degrees C for 2h. The synthesized nanocrystalline CuGa(2)O(4) powders have been characterised through X-ray diffraction (XRD), transmission electron microscopy (TEM), field-emission scanning electron microscopy (FESEM) study, energy dispersive X-ray (EDX) analysis and BET (Brunauer-Emmett-Teller) surface area measurement. The synthesized CuGa(2)O(4) having spinel structure with specific surface area of 40m(2)/g exhibits maximum sensitivity towards H(2), LPG, and NH(3) at 350 degrees C.

  13. An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering.

    PubMed

    Daouahi, Mohsen; Omri, Mourad; Kerm, Abdul Ghani Yousseph; Al-Agel, Faisal Abdulaziz; Rekik, Najeh

    2015-02-05

    The aim of the study reported in this paper is to investigate the role of the high partial pressure of hydrogen introduced during the growth of nanocrystalline silicon carbide thin films (nc-SiC:H). For this purpose, we report the preparation as well as spectroscopic studies of four series of nc-SiC:H obtained by radio-frequency magnetron sputtering at high partial pressure of hydrogen by varying the percentage of H2 in the gas mixture from 70% to 100% at common substrate temperature (TS=500°C). The effects of the dilution on the structural changes and the chemical bonding of the different series have been studied using Fourier transform infrared and Raman spectroscopy. For this range of hydrogen dilution, two groups of films were obtained. The first group is characterized by the dominance of the crystalline phase and the second by a dominance of the amorphous phase. This result confirms the multiphase structure of the grown nc-SiC:H thin films by the coexistence of the SiC network, carbon-like and silicon-like clusters. Furthermore, infrared results show that the SiC bond is the dominant absorption peak and the carbon atom is preferentially bonded to silicon. The maximum value obtained of the crystalline fraction is about 77%, which is relatively important compared to other results obtained by other techniques. In addition, the concentration of CHn bonds was found to be lower than that of SiHn for all series. Raman measurements revealed that the crystallization occurs in all series even at 100% H2 dilution suggesting that high partial pressure of hydrogen favors the formation of silicon nanocrystallites (nc-Si). The absence of both the longitudinal acoustic band and the transverse optical band indicate that the crystalline phase is dominant.

  14. Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si:H/a-SiGe:H tandem solar cells

    NASA Astrophysics Data System (ADS)

    Tian-Tian, Li; Tie, Yang; Jia, Fang; De-Kun, Zhang; Jian, Sun; Chang-Chun, Wei; Sheng-Zhi, Xu; Guang-Cai, Wang; Cai-Chi, Liu; Ying, Zhao; Xiao-Dan, Zhang

    2016-04-01

    Phosphorous-doped hydrogenated nanocrystalline silicon oxide (n-nc-SiO x :H) films are prepared via radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). Increasing deposition power during n-nc-SiO x :H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiO x :H film. In addition, in 20s interval before increasing the deposition power, high density small grains are formed in amorphous SiO x matrix with higher crystalline volume fraction (I c) and have a lower lateral conductivity. This uniform microstructure indicates that the higher I c can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si:H/a-SiGe:H tandem solar cells acting as an n-nc-SiO x :H back reflector prepared by the gradient power during deposition. Compared with the sample with SiO x back reflector, with a constant power used in deposition process, the sample with gradient power SiO x back reflector can enhance the total short-circuit current density (J sc) and the initial efficiency of a-Si:H/a-SiGe:H tandem solar cells by 8.3% and 15.5%, respectively. Project supported by the Hi-Tech Research and Development Program of China (Grant No. 2013AA050302), the National Natural Science Foundation of China (Grant No. 61474065), Tianjin Municipal Research Key Program of Application Foundation and Advanced Technology, China (Grant No. 15JCZDJC31300), the Key Project in the Science & Technology Pillar Program of Jiangsu Province, China (Grant No. BE2014147-3), and the Specialized Research Fund for the Ph. D. Program of Higher Education, China (Grant No. 20120031110039).

  15. Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells.

    PubMed

    Li, Tiantian; Zhang, Qixing; Ni, Jian; Huang, Qian; Zhang, Dekun; Li, Baozhang; Wei, Changchun; Yan, Baojie; Zhao, Ying; Zhang, Xiaodan

    2017-03-29

    We used silver nanoparticles (Ag-NPs) embedded in the p-type semiconductor layer of hydrogenated amorphous silicon (a-Si:H) solar cells in the Schottky barrier contact design to modify the interface between aluminum-doped ZnO (ZnO:Al, AZO) and p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) without plasmonic absorption. The high work function of the Ag-NPs provided a good channel for the transport of photogenerated holes. A p-type nanocrystalline SiC:H layer was used to compensate for the real surface defects and voids on the surface of Ag-NPs to reduce recombination at the AZO/p-type layer interface, which then enhanced the photovoltage of single-junction a-Si:H solar cells to values as high as 1.01 V. The Ag-NPs were around 10 nm in diameter and thermally stable in the p-type a-SiC:H film at the solar-cell process temperature. We will also show that a wide range of photovoltages between 1.01 and 2.89 V could be obtained with single-, double-, and triple-junction solar cells based on the single-junction a-Si:H solar cells with tunable high photovoltage. These solar cells are suitable photocathodes for solar water-splitting applications.

  16. p-type Mesoscopic nickel oxide/organometallic perovskite heterojunction solar cells.

    PubMed

    Wang, Kuo-Chin; Jeng, Jun-Yuan; Shen, Po-Shen; Chang, Yu-Cheng; Diau, Eric Wei-Guang; Tsai, Cheng-Hung; Chao, Tzu-Yang; Hsu, Hsu-Cheng; Lin, Pei-Ying; Chen, Peter; Guo, Tzung-Fang; Wen, Ten-Chin

    2014-04-23

    In this article, we present a new paradigm for organometallic hybrid perovskite solar cell using NiO inorganic metal oxide nanocrystalline as p-type electrode material and realized the first mesoscopic NiO/perovskite/[6,6]-phenyl C61-butyric acid methyl ester (PC61BM) heterojunction photovoltaic device. The photo-induced transient absorption spectroscopy results verified that the architecture is an effective p-type sensitized junction, which is the first inorganic p-type, metal oxide contact material for perovskite-based solar cell. Power conversion efficiency of 9.51% was achieved under AM 1.5 G illumination, which significantly surpassed the reported conventional p-type dye-sensitized solar cells. The replacement of the organic hole transport materials by a p-type metal oxide has the advantages to provide robust device architecture for further development of all-inorganic perovskite-based thin-film solar cells and tandem photovoltaics.

  17. Magnetic ordering temperature of nanocrystalline Gd: enhancement of magnetic interactions via hydrogenation-induced “negative” pressure

    PubMed Central

    Tereshina, E. A.; Khmelevskyi, S.; Politova, G.; Kaminskaya, T.; Drulis, H.; Tereshina, I. S.

    2016-01-01

    Gadolinium is a nearly ideal soft-magnetic material. However, one cannot take advantage of its properties at temperatures higher than the room temperature where Gd loses the ferromagnetic ordering. By using high-purity bulk samples with grains ~200 nm in size, we present proof-of-concept measurements of an increased Curie point (TC) and spontaneous magnetization in Gd due to hydrogenation. From first-principles we explain increase of TC in pure Gd due to the addition of hydrogen. We show that the interplay of the characteristic features in the electronic structure of the conduction band at the Fermi level in the high-temperature paramagnetic phase of Gd and “negative” pressure exerted by hydrogen are responsible for the observed effect. PMID:26931775

  18. Large scale, highly dense nanoholes on metal surfaces by underwater laser assisted hydrogen etching near nanocrystalline boundary

    NASA Astrophysics Data System (ADS)

    Lin, Dong; Zhang, Martin Yi; Ye, Chang; Liu, Zhikun; Liu, C. Richard; Cheng, Gary J.

    2012-03-01

    A new method to generate large scale and highly dense nanoholes is presented in this paper. By the pulsed laser irradiation under water, the hydrogen etching is introduced to form high density nanoholes on the surfaces of AISI 4140 steel and Ti. In order to achieve higher nanohole density, laser shock peening (LSP) followed by recrystallization is used for grain refinement. It is found that the nanohole density does not increase until recrystallization of the substructures after laser shock peening. The mechanism of nanohole generation is studied in detail. This method can be also applied to generate nanoholes on other materials with hydrogen etching effect.

  19. Aptamer strategy for ATP detection on nanocrystalline diamond functionalized by a nitrogen and hydrogen radical beam system

    NASA Astrophysics Data System (ADS)

    Suaebah, E.; Seshimo, Y.; Shibata, M.; Kono, S.; Hasegawa, M.; Kawarada, H.

    2017-01-01

    Here, we report a novel method for micropatterning oligonucleotides on the diamond surface via forming amine groups on the diamond surface by nitrogen/hydrogen radical treatment. The covalent bonding of the supporting oligonucleotide and characterization of an immobilized hybridized oligonucleotide with Cy5 modification were investigated by fluorescence microscopy. To investigate the effectiveness of nitrogen/hydrogen radical treatment for amine termination, two types of radical treatment were used: hydrogen/nitrogen radical treatment and pure nitrogen radical treatment. From the results, hydrogen/nitrogen radical treatment produces amine (NH2) termination on the diamond surface. The effect of amine termination was investigated by immobilization of single-stranded DNA via amide bonding between surface NH2 groups and COOH groups terminating the DNA. The immobilized single-stranded DNA (supporting DNA), which has a complementary relationship with the adenosine triphosphate (ATP) aptamer (DNA), hybridizes with the aptamer with attached fluorescence dye. When ATP molecules approach the double-stranded DNA, the aptamer forms a close relationship with the supporting DNA and combines with ATP. ATP detection was effectively carried out by reduction of fluorescence.

  20. Nanocrystalline high performance permanent magnets

    NASA Astrophysics Data System (ADS)

    Gutfleisch, O.; Bollero, A.; Handstein, A.; Hinz, D.; Kirchner, A.; Yan, A.; Müller, K.-H.; Schultz, L.

    2002-04-01

    Recent developments in nanocrystalline rare earth-transition metal magnets are reviewed and emphasis is placed on research work at IFW Dresden. Principal synthesis methods include high energy ball milling, melt spinning and hydrogen assisted methods such as reactive milling and hydrogenation-disproportionation-desorption-recombination. These techniques are applied to NdFeB-, PrFeB- and SmCo-type systems with the aim to produce high remanence magnets with high coercivity. Concepts of maximizing the energy density in nanostructured magnets by either inducing a texture via anisotropic HDDR or hot deformation or enhancing the remanence via magnetic exchange coupling are evaluated.

  1. p-type Mesoscopic Nickel Oxide/Organometallic Perovskite Heterojunction Solar Cells

    PubMed Central

    Wang, Kuo-Chin; Jeng, Jun-Yuan; Shen, Po-Shen; Chang, Yu-Cheng; Diau, Eric Wei-Guang; Tsai, Cheng-Hung; Chao, Tzu-Yang; Hsu, Hsu-Cheng; Lin, Pei-Ying; Chen, Peter; Guo, Tzung-Fang; Wen, Ten-Chin

    2014-01-01

    In this article, we present a new paradigm for organometallic hybrid perovskite solar cell using NiO inorganic metal oxide nanocrystalline as p-type electrode material and realized the first mesoscopic NiO/perovskite/[6,6]-phenyl C61-butyric acid methyl ester (PC61BM) heterojunction photovoltaic device. The photo-induced transient absorption spectroscopy results verified that the architecture is an effective p-type sensitized junction, which is the first inorganic p-type, metal oxide contact material for perovskite-based solar cell. Power conversion efficiency of 9.51% was achieved under AM 1.5 G illumination, which significantly surpassed the reported conventional p-type dye-sensitized solar cells. The replacement of the organic hole transport materials by a p-type metal oxide has the advantages to provide robust device architecture for further development of all-inorganic perovskite-based thin-film solar cells and tandem photovoltaics. PMID:24755642

  2. Rethinking the P-type ATPase problem.

    PubMed

    Scarborough, Gene A

    2003-11-01

    There are very good reasons to stop thinking about the molecular mechanism of the P-type ion-translocating ATPases in terms of the traditional E1E2 model and to start thinking about it in more progressive ways. This makes it possible to see the ion-transport cycle as a rational series of discrete steps with well defined driving forces, including the crucial energy transduction step, where the chemical energy of ATP hydrolysis is exchanged for the osmotic energy of an ion gradient. Importantly, although major enzyme conformational changes accompany each of these steps, none of them drive the energy coupling reaction. Thus, neither the E1E2 model nor conformational energy coupling, the cornerstones of traditional thinking about the P-type ATPases, are reliable paradigms for future efforts to understand how these transporters work. Alternatives must be seriously considered.

  3. P-type silicon drift detectors

    SciTech Connect

    Walton, J.T.; Krieger, B.; Krofcheck, D.; O`Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.

    1995-06-01

    Preliminary results on 16 CM{sup 2}, position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 {times} l0{sup 6} s{sup {minus}1} is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 {mu}m to 1200 {mu}m. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed.

  4. Nanocrystalline ceramic materials

    DOEpatents

    Siegel, R.W.; Nieman, G.W.; Weertman, J.R.

    1994-06-14

    A method is disclosed for preparing a treated nanocrystalline metallic material. The method of preparation includes providing a starting nanocrystalline metallic material with a grain size less than about 35 nm, compacting the starting nanocrystalline metallic material in an inert atmosphere and annealing the compacted metallic material at a temperature less than about one-half the melting point of the metallic material. 19 figs.

  5. Protein-modified nanocrystalline diamond thin films for biosensor applications

    NASA Astrophysics Data System (ADS)

    Härtl, Andreas; Schmich, Evelyn; Garrido, Jose A.; Hernando, Jorge; Catharino, Silvia C. R.; Walter, Stefan; Feulner, Peter; Kromka, Alexander; Steinmüller, Doris; Stutzmann, Martin

    2004-10-01

    Diamond exhibits several special properties, for example good biocompatibility and a large electrochemical potential window, that make it particularly suitable for biofunctionalization and biosensing. Here we show that proteins can be attached covalently to nanocrystalline diamond thin films. Moreover, we show that, although the biomolecules are immobilized at the surface, they are still fully functional and active. Hydrogen-terminated nanocrystalline diamond films were modified by using a photochemical process to generate a surface layer of amino groups, to which proteins were covalently attached. We used green fluorescent protein to reveal the successful coupling directly. After functionalization of nanocrystalline diamond electrodes with the enzyme catalase, a direct electron transfer between the enzyme's redox centre and the diamond electrode was detected. Moreover, the modified electrode was found to be sensitive to hydrogen peroxide. Because of its dual role as a substrate for biofunctionalization and as an electrode, nanocrystalline diamond is a very promising candidate for future biosensor applications.

  6. P-type transparent conducting oxides.

    PubMed

    Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

    2016-09-28

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of 'chemical modulation of the valence band' to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d (10) orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu(+)-based delafossites, layered oxychalcogenides, nd (6) spinel oxides, Cr(3+)-based oxides (3d (3)) and post-transition metal oxides with lone pair state (ns (2)). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed.

  7. P-type transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Zhang, Kelvin H. L.; Xi, Kai; Blamire, Mark G.; Egdell, Russell G.

    2016-09-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d 10 orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu+-based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr3+-based oxides (3d 3) and post-transition metal oxides with lone pair state (ns 2). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed.

  8. Effects of hydrogen annealing and codoping (Mn, Fe, Ni, Ga, Y) of nanocrystalline Cu-doped ZnO dilute magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Bououdina, Mohamed; Aziz Dakhel, Aqeel

    2015-01-01

    Zinc oxide (ZnO) codoped with Cu and M ions (M = Mn, Fe, Ni, Ga, Y) powders were synthesised by simultaneous thermal co-decomposition of a mixture of zinc and metal complexes. The synthesised chemical formula for the prepared solid solution is Zn0.97Cu0.01M0.02O. X-ray diffraction (XRD) analysis confirms the formation of single nanocrystalline structure of the as-prepared powders, thus, both Cu and M ions were incorporated into ZnO lattice forming solid solutions. Magnetic measurements reveal that all the as-synthesised doped ZnO powders gained partial (RT-FM) properties but with different strength and BH-behaviour depends on the nature of the doping (M). Furthermore, H2 post-treatment was subsequently carried out and it was found that the observed RT-FM is enhanced. Very interestingly, in case of Ni dopant, the whole powder becomes completely ferromagnetic with coercivity (Hc), remanence (Mr) and saturation magnetisation (Ms) of 133.6 Oe, 1.086 memu/g and 4.959 memu/g, respectively. The value of Ms was increased by ~ 95% in comparison with as-prepared.

  9. Electronic structure of sulfur-modified nanocrystalline carbon films

    NASA Astrophysics Data System (ADS)

    Gupta, S.; Weiner, B. R.; Morell, G.

    2005-05-01

    Thin films of nanocrystalline diamond were grown by filament-assisted chemical-vapor deposition using methane as carbon precursor with high hydrogen dilution and hydrogen sulfide concentration ranging from 0to500ppm in the gas phase. The surface topography and electronic structure of these films (n-C:S) were investigated using ultrahigh-vacuum scanning tunneling microscopy and scanning tunneling spectroscopy (STS), respectively. Topographic image analyses depict that the root-mean-square roughness of the film surface and average grain size decreases with increasing sulfur incorporation either in gas phase or solid films. High-resolution scanning tunneling microscopy images reveal the localized regions of high conductivity (white) surrounded by less conductive regions (black) pointing at the existence of inhomogeneous mixture of sp2- and sp3-bonded carbon in aggregate or clustered and dispersed state. The surface density of states was determined using scanning tunneling spectroscopy where normalized differential conductivity, i.e., (dI /dV)/(I/V) mimics local density of states (DOS). These methods were employed to understand the role of sulfur in the modification of both the surface microstructure and electronic structure near the Fermi level. The band edges were derived by taking tangents to the differential conductivity (dI/dV) within a certain potential window of ±2eV of the Fermi level. The resulting band gap is found to be similar to that measured optically (Tauc gap). The Fermi level for undoped nanocrystalline carbon (n-C) was found just below the midgap indicating that n-C is a weakly p-type semiconductor. The STS DOS shows oscillatory behavior or peaks which we ascribe to states of the surface layer having relatively more graphitic or sp2-bonded carbon bonds. With higher sulfur addition, the Fermi level is found to move above the midgap. These results seem to agree quite well with our early work on electrical conductivity exhibiting n-type doping taking

  10. Structural, optical, and magnetic properties of Cu- and Ni-codoped CdO dilute magnetic nanocrystalline semiconductor: effect of hydrogen post-treatment

    NASA Astrophysics Data System (ADS)

    Dakhel, A. A.; Bououdina, M.

    2015-06-01

    Cadmium oxide codoped with Cu and Ni ions powders was synthesised by thermal co-decomposition of a mixture of cadmium, copper, and nickel acetylacetonates. The mass ratio of Cu/Cd was fixed, while the Ni/Cd mass ratio was varied systematically. The purpose of the present study is to prepare powders having room-temperature ferromagnetic (RT-FM) properties. X-ray fluorescence (XRF) and X-ray diffraction (XRD) confirm the purity and the formation of single nanocrystalline structure of the as-prepared powders. The energy bandgap of the as-prepared powders was found to vary slightly and then increases by 3.96-38.02 % after post-H2-treatment. Magnetic measurements reveal that all as-prepared doped CdO powders gained partial (RT-FM) properties. Furthermore, the created RT-FM is dependent on the Ni% doping level. After annealing under H2 gas, a strong enhancement of RT-FM was observed, especially for 1.2 % Ni-doping-level powder where the whole powder became ferromagnetic with coercivity, remanence, and saturation magnetisation of 249.2 Oe, 4.52 memu/g, and 14.57 memu/g, respectively, representing an increase by ~241.3, 1062, and 1700 %, respectively, in comparison with the as-prepared sample. Thus, it was proved, for the first time, the possibility of producing of codoped CdO with RT-FM, where the magnetic characteristics can be tailored by doping and post-treatment under H2 atmosphere, thus a new potential candidate for dilute magnetic semiconductor (DMS).

  11. Creating bulk nanocrystalline metal.

    SciTech Connect

    Fredenburg, D. Anthony; Saldana, Christopher J.; Gill, David D.; Hall, Aaron Christopher; Roemer, Timothy John; Vogler, Tracy John; Yang, Pin

    2008-10-01

    Nanocrystalline and nanostructured materials offer unique microstructure-dependent properties that are superior to coarse-grained materials. These materials have been shown to have very high hardness, strength, and wear resistance. However, most current methods of producing nanostructured materials in weapons-relevant materials create powdered metal that must be consolidated into bulk form to be useful. Conventional consolidation methods are not appropriate due to the need to maintain the nanocrystalline structure. This research investigated new ways of creating nanocrystalline material, new methods of consolidating nanocrystalline material, and an analysis of these different methods of creation and consolidation to evaluate their applicability to mesoscale weapons applications where part features are often under 100 {micro}m wide and the material's microstructure must be very small to give homogeneous properties across the feature.

  12. Hydrogenation thermodynamics of melt-spun magnesium rich Mg-Ni nanocrystalline alloys with the addition of multiwalled carbon nanotubes and TiF3

    NASA Astrophysics Data System (ADS)

    Hou, Xiaojiang; Hu, Rui; Zhang, Tiebang; Kou, Hongchao; Li, Jinshan

    2016-02-01

    Based on the complexity of hydrogen absorption/desorption process and from the perspective of overall control, the as-cast Mg-10wt%Ni (Mg10Ni) alloy has been successively optimized by melt-spinning and surface catalyzed to realize the internal refinement as well as surface modification. The isothermal hydrogenation behavior of modified Mg-rich alloys has been investigated in this work. The results indicate that melt-spun Mg10Ni catalyzed by multiwalled carbon nanotubes (MWCNTs) coupling with TiF3 possesses superior activation properties and can absorb 6.23 wt% at 250 °C under 2.5 MPa. It is worth mentioning that the hydrogenation capacities of Mg10Ni-MWCNTs-TiF3 are 5.93 wt% and 5.99 wt% within the initial 1 min and 5 min, respectively. Meanwhile, the catalytic effect of MWCNTs and TiF3 has been discussed. The improved activation performance as well as the thermodynamics properties of Mg10Ni catalyzed by MWCNTs and TiF3 is attributed to the synergistic effect on dissociation of H2 molecules, diffusion of H-atoms and heterogeneous nucleation of hydrides.

  13. Structural, optical, and ferromagnetic characterization of Sm-doped LaOCl nanocrystalline synthesized by solvothermal route: Significant effect of hydrogen post treatment

    SciTech Connect

    Dakhel, A.A.

    2016-09-15

    Pure and Sm-doped lanthanum oxychloride (LaOCl) nanomaterials were synthesized by solvothermal route followed by a subsequent heat treatment process. The objective of the present work is to study and develop conditions required to create stable room-temperature ferromagnetic (RT-FM) properties in LaOCl. To achieve that aim, magnetic samarium Sm{sup 3+} ions were used as dopant sources for stable FM properties. Systematic structural, optical, and magnetic properties of undoped and Sm-doped LaOCl samples were investigated as function of post-annealing conditions (temperature and atmosphere). The optical absorption properties were studied by diffuse reflection spectroscopy (DRS). The magnetic measurements reveal that Sm-doped LaOCl nanopowders have partial RT-FM properties due to the doped ions. The variations of magnetic properties with pre-annealing temperature were investigated. Furthermore, the electronic medium of host LaOCl crystalline lattice, which carries the spin-spin (S.S) exchange interaction between localised dopant Sm{sup 3+}(4f{sup 5}) spins, was developed by annealing in hydrogen gas (hydrogenation). It was established that annealing in hydrogen atmosphere boosts the RT-FM properties so that the saturation magnetisation could be increased by more than 100%. Physical explanations and discussions were given in this paper. Thus, it was proved that the magnetic properties could be tailored to diamagnetic LaOCl compound by Sm-doping and post treatment under H{sub 2} atmosphere. Therefore, LaOCl nanocrystals could be used as a potential candidate for optical phosphor applications with magnetic properties. - Graphical abstract: M-H dependence of Sm-doped LaOCl powders. Study the effect of hydrogenation. - Highlights: • Synthesis of Sm-doped LaOCl nanoparticles. • DM LaOCl transforms to FM with dilute concentration of Sm doping. • Annealing under H{sub 2} atmosphere induces drastic boost in the FM properties. • Saturation magnetization attained 29 memu

  14. Structural, optical, and ferromagnetic characterization of Sm-doped LaOCl nanocrystalline synthesized by solvothermal route: Significant effect of hydrogen post treatment

    NASA Astrophysics Data System (ADS)

    Dakhel, A. A.

    2016-09-01

    Pure and Sm-doped lanthanum oxychloride (LaOCl) nanomaterials were synthesized by solvothermal route followed by a subsequent heat treatment process. The objective of the present work is to study and develop conditions required to create stable room-temperature ferromagnetic (RT-FM) properties in LaOCl. To achieve that aim, magnetic samarium Sm3+ ions were used as dopant sources for stable FM properties. Systematic structural, optical, and magnetic properties of undoped and Sm-doped LaOCl samples were investigated as function of post-annealing conditions (temperature and atmosphere). The optical absorption properties were studied by diffuse reflection spectroscopy (DRS). The magnetic measurements reveal that Sm-doped LaOCl nanopowders have partial RT-FM properties due to the doped ions. The variations of magnetic properties with pre-annealing temperature were investigated. Furthermore, the electronic medium of host LaOCl crystalline lattice, which carries the spin-spin (S.S) exchange interaction between localised dopant Sm3+(4f5) spins, was developed by annealing in hydrogen gas (hydrogenation). It was established that annealing in hydrogen atmosphere boosts the RT-FM properties so that the saturation magnetisation could be increased by more than 100%. Physical explanations and discussions were given in this paper. Thus, it was proved that the magnetic properties could be tailored to diamagnetic LaOCl compound by Sm-doping and post treatment under H2 atmosphere. Therefore, LaOCl nanocrystals could be used as a potential candidate for optical phosphor applications with magnetic properties.

  15. Growth and properties of nanocrystalline germanium films

    NASA Astrophysics Data System (ADS)

    Niu, Xuejun; Dalal, Vikram L.

    2005-11-01

    We report on the growth characteristics and structure of nanocrystalline germanium films using low-pressure plasma-assisted chemical vapor deposition process in a remote electron-cyclotron-resonance reactor. The films were grown from mixtures of germane and hydrogen at deposition temperatures varying between 130 °C and 310 °C. The films were measured for structure using Raman and x-ray spectroscopy. It is shown that the orientation of the film depends strongly upon the deposition conditions. Low-temperature growth leads to both <111> and <220> orientations, whereas at higher temperatures, the <220> grain strongly dominates. The Raman spectrum reveals a sharp crystalline peak at 300 cm-1 and a high ratio between crystalline and amorphous peak that is at 285 cm-1. The grain size in the films is a strong function of hydrogen dilution, with higher dilutions leading to smaller grain sizes. Growth temperature also has a strong influence on grain size, with higher temperatures yielding larger grain sizes. From these results, which are seen to be compatible with the growth of nanocrystalline Si films, it is seen that the natural growth direction for the film is <220>, and that bonded hydrogen interferes with the growth of <220> grains. High hydrogen dilutions lead to more random nucleation.

  16. Low temperature acetone detection by p-type nano-titania thin film: Equivalent circuit model and sensing mechanism

    NASA Astrophysics Data System (ADS)

    Bhowmik, B.; Dutta, K.; Hazra, A.; Bhattacharyya, P.

    2014-09-01

    Undoped nanocrystalline anatase p-type TiO2 thin film was deposited by sol-gel method on thermally oxidized p-Si (2-5 Ω cm, <1 0 0>) substrates. The thin film was characterized by X-ray Diffraction (XRD) and Field Emission Scanning Electron Microscopy (FESEM) to confirm the formation of nanocrystalline anatase titania and to determine the crystallite size (∼7 nm). The resistive sensor structure was fabricated employing two lateral Pd electrodes on top of the TiO2 sensing layer. The developed sensor was tested in the temperature range of 50-200 °C for the detection of low ppm acetone (0.5-50 ppm). The maximum response of ∼115% was obtained at 150 °C with response/recovery time of 14 s/22 s at 50 ppm acetone (in air). Moreover, the sensors were capable of detecting acetone as low as 0.5 ppm with acceptable response magnitude. As titania acetone sensors are mostly n-TiO2 based, the acetone sensing mechanism for p-TiO2 is yet to be established authentically. To address the issue, an equivalent circuit model, based on the corresponding band diagram of nanocrystalline p-TiO2 with Pd electrode, was developed to describe the electron transfer mechanism through grain, grain boundary and Pd electrode under the influence of acetone vapor.

  17. Chemical-free n-type and p-type multilayer-graphene transistors

    NASA Astrophysics Data System (ADS)

    Dissanayake, D. M. N. M.; Eisaman, M. D.

    2016-08-01

    A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

  18. Possible efficient p-type doping of AlN using Be: An ab initio study

    NASA Astrophysics Data System (ADS)

    Wu, R. Q.; Shen, L.; Yang, M.; Sha, Z. D.; Cai, Y. Q.; Feng, Y. P.; Huang, Z. G.; Wu, Q. Y.

    2007-10-01

    Spin density functional theory based ab initio study is carried out to investigate the feasibility of fabricating p-type AlN using Be as an efficient dopant. It is found that substitutional BeAl is an acceptor with an activation energy of 0.34eV. To overcome the low solubility of direct incorporation of Be into AlN and self-compensation from Be interstitials, we propose a hydrogen-assisted growth scheme which improves the solubility and suppresses interstitials. Oxygen is also found to be an effective codopant to activate Be in AlN. Our results suggest the possibility of improving p-type conductivity of AlN by Be doping.

  19. Method for the preparation of nanocrystalline diamond thin films

    DOEpatents

    Gruen, D.M.; Krauss, A.R.

    1998-06-30

    A method and system are disclosed for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrocarbon and possibly hydrogen, and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous vapor and deposition of a diamond film on the field emission tip. 40 figs.

  20. Method for the preparation of nanocrystalline diamond thin films

    DOEpatents

    Gruen, Dieter M.; Krauss, Alan R.

    1998-01-01

    A method and system for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrocarbon and possibly hydrogen, and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous vapor and deposition of a diamond film on the field emission tip.

  1. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    SciTech Connect

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei; Jiang, Xuening; Xu, Hongxia

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  2. High carrier concentration p-type transparent conducting oxide films

    DOEpatents

    Yan, Yanfa; Zhang, Shengbai

    2005-06-21

    A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

  3. Development of improved p-type silicon-germanium alloys

    NASA Technical Reports Server (NTRS)

    Mclane, George; Wood, Charles; Vandersande, Jan; Raag, Valvo; Heshmatpour, Ben

    1987-01-01

    Annealing experiments in the temperature range 1100-1275 C have been performed on p-type Si(0.8)Ge(0.2) samples with BP, B(6.5)P, and GaSb material additives. Both electrical resistivity and Seebeck coefficient generally decrease for these samples as annealing temperature is increased, with thermoelectric power factor sometimes being improved by annealing.

  4. Empirical model predicting the layer thickness and porosity of p-type mesoporous silicon

    NASA Astrophysics Data System (ADS)

    Wolter, Sascha J.; Geisler, Dennis; Hensen, Jan; Köntges, Marc; Kajari-Schröder, Sarah; Bahnemann, Detlef W.; Brendel, Rolf

    2017-04-01

    Porous silicon is a promising material for a wide range of applications because of its versatile layer properties and the convenient preparation by electrochemical etching. Nevertheless, the quantitative dependency of the layer thickness and porosity on the etching process parameters is yet unknown. We have developed an empirical model to predict the porosity and layer thickness of p-type mesoporous silicon prepared by electrochemical etching. The impact of the process parameters such as current density, etching time and concentration of hydrogen fluoride is evaluated by ellipsometry. The main influences on the porosity of the porous silicon are the current density, the etching time and their product while the etch rate is dominated by the current density, the concentration of hydrogen fluoride and their product. The developed model predicts the resulting layer properties of a certain porosification process and can, for example be used to enhance the utilization of the employed chemicals.

  5. p-type silicon detector for brachytherapy dosimetry.

    PubMed

    Piermattei, A; Azario, L; Monaco, G; Soriani, A; Arcovito, G

    1995-06-01

    The sensitivity of a cylindrical p-type silicon detector was studied by means of air and water measurements using different photon beams. A lead filter cap around the diode was used to minimize the dependence of the detector response as a function of the brachytherapy photon energy. The radial dose distribution of a high-activity 192Ir source in a brachytherapy phantom was measured by means of the shielded diode and the agreement of these data with theoretical evaluations confirms the method used to compensate diode response in the intermediate energy range. The diode sensitivity was constant over a wide range of dose rates of clinical interest; this allowed one to have a small detector calibrated in terms of absorbed dose in a medium. Theoretical evaluations showed that a single shielding filter around the p-type diode is sufficient to obtain accurate dosimetry for 192Ir, 137Cs, and 60Co brachytherapy sources.

  6. Methodologies in Search of p-type Transparent Conductors

    NASA Astrophysics Data System (ADS)

    Lam, Kanber

    P-type transparent conductors are rare in nature but could lead to a lot technological innovations. A systematic search for p-type transparent conductors can be divided into two types: to search for (I) experimentally unknown compounds and (II) experimentally known ones. The difference between the two types of search lies in the fact that we always start with the experimental crystal structure in type II search while such information is lacking in the type I search. To make the type I research possible, a reasonably efficient method in predicting the ground state crystal structure is required. And the evolutionary algorithm with the real-space cut-and-splice method is a promising candidate for the task. For both type I and type II searches, we have to accurately predict the fundamental band gap and the hole conductivity. Corrections to density functional theory band gap, such as screened exchange LDA (sxLDA) or G0W0 , are required. The hole conductivity is linearly dependent on the hole concentration and inversely proportional to the hole effective mass. And we focused on the study of host material properties, the fundamental band gaps and hole effective masses, in the oxide sulfide family and eight promising candidates as p-type transparent conducting hosts were found. The hole population in the known transparent conducting oxides (TCOs) is mostly orig- inating from intrinsic point defects. However, a material La5Cu6O4S7 , whose hole conduc- tivity is an order of magnitude higher than the known TCOs, has its holes originating from a line structure, namely the breaking of dimers on the sulfur chain. The sulfur chain is optically inactive and serves purely to generate holes traveling in the Cu6S6 layers at finite temperature. This interesting hole-generating mechanism could open up new possibilities to achieve high hole conductivity in p-type TCs.

  7. Bi-Se doped with Cu, p-type semiconductor

    DOEpatents

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  8. P-type conductivity in annealed strontium titanate

    SciTech Connect

    Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D.

    2015-12-15

    Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO{sub 3}, or STO) samples that were annealed at 1200°C. Room-temperature mobilities above 100 cm{sup 2}/V s were measured, an order of magnitude higher than those for electrons (5-10 cm{sup 2}/V s). Average hole densities were in the 10{sup 9}-10{sup 10} cm{sup −3} range, consistent with a deep acceptor.

  9. New electron trap in p-type Czochralski silicon

    NASA Technical Reports Server (NTRS)

    Mao, B.-Y.; Lagowski, J.; Gatos, H. C.

    1984-01-01

    A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

  10. Voltammetric and impedance behaviours of surface-treated nano-crystalline diamond film electrodes

    SciTech Connect

    Liu, F. B.; Jing, B.; Cui, Y.; Di, J. J.; Qu, M.

    2015-04-15

    The electrochemical performances of hydrogen- and oxygen-terminated nano-crystalline diamond film electrodes were investigated by cyclic voltammetry and AC impedance spectroscopy. In addition, the surface morphologies, phase structures, and chemical states of the two diamond films were analysed by scanning probe microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, respectively. The results indicated that the potential window is narrower for the hydrogen-terminated nano-crystalline diamond film than for the oxygen-terminated one. The diamond film resistance and capacitance of oxygen-terminated diamond film are much larger than those of the hydrogen-terminated diamond film, and the polarization resistances and double-layer capacitance corresponding to oxygen-terminated diamond film are both one order of magnitude larger than those corresponding to the hydrogen-terminated diamond film. The electrochemical behaviours of the two diamond film electrodes are discussed.

  11. Oxychalcogenides as New Efficient p-TYPE Thermoelectric Materials

    NASA Astrophysics Data System (ADS)

    Barreteau, Celine; Pan, Lin; Pei, Yan-Ling; Zhao, Li-Dong; Berardan, David; Dragoe, Nita

    2013-07-01

    During the past two years, we have underlined the great potential of p-type oxychalcogenides, with parent compound BiCuSeO, for thermoelectric applications in the medium temperature range (400-650°C). These materials, which do not contain lead and are less expensive than Te containing materials, exhibit large thermoelectric figure of merit, exceeding 1 in a wide temperature range, mainly due to an intrinsically very low thermal conductivity. This paper summarizes the main chemical and crystallographic features of this system, as well as the thermoelectric properties. It also gives new directions to improve these properties, and discuss the potential of these materials for wide scale applications in thermoelectric conversion system in the medium temperature range.

  12. Experiments with semiconducting p-type misfit compound

    NASA Astrophysics Data System (ADS)

    Heinonen, H.; Tervo, J.

    2012-06-01

    Ca3Co4O9 is a p-type semiconductor and a promising thermoelectric material with misfit layer structure. Cobalt-based layered structure materials have been studied as thermoelectric material candidates because of their nontoxicity, light weight, high thermal and chemical stability and oxidation resistance at high temperature. The operating area of Ca3Co4O9 in thermoelectric applications is roughly from 800K to 1000K. Ca3Co4O9 powders were synthetized by a sol-gel method which enables fabrication of high purity and homogeneous particles. Calcium and cobalt nitrate hydrates were used as feedstock and citric acid as complexing agent in the sol-gel procedure. Powders were calcinated at 1123K and further processing by ball milling. Pure Ca3Co4O9 powders were sintered by SPS and conventional method.

  13. What are the P-type Asteroids Made Of?

    NASA Technical Reports Server (NTRS)

    Hiroi, T.; Pieters, C. M.; Rutherford, M. J.; Zolensky, M. E.; Sasaki, S.; Ueda, Y.; Miyamoto, M.

    2004-01-01

    The P-type asteroids, together with the D asteroids, had been believed to be one of the most primitive asteroid classes having surface materials rich in carbon and/or organics. Upon a fall of a new type of meteorite, Tagish Lake in 2000, we came to have a possible sample of the D (and/or T) asteroids. In both spectrally and distance from the sun, the P asteroids are located in between the C/G/B/F asteroids and the D asteroids. Because it is believed that the former group are similar to (thermally metamorphosed) CI/CM chondrites and the latter the Tagish Lake meteorite, the surface material of the P asteroids may be understood in combination of those two meteorite groups. Taking that direction, this paper presents possibly the first quantitative characterization of the P asteroids in terms of carbonaceous chondrites and their experimental derivatives.

  14. n and p type character of single molecule diodes

    PubMed Central

    Zoldan, Vinícius Claudio; Faccio, Ricardo; Pasa, André Avelino

    2015-01-01

    Looking for single molecule electronic devices, we have investigated the charge transport properties of individual tetra-phenylporphyrin molecules on different substrates by ultrahigh-vacuum scanning tunneling microscopy and spectroscopy and by first-principles calculations. The tetra-phenylporphyrins with a Co atom (Co-TPP) or 2 hydrogens (H2-TPP) in the central macrocycle when deposited on Cu3Au(100) substrates showed a diode-like behavior with p and n type character, respectively. After removing the central hydrogens of H2-TPP molecule with the STM tip an ohmic behavior was measured. The rectifying effect was understood from the theoretical point of view by assuming for Co-TPP HOMO conduction and for H2-TPP LUMO conduction, both selectively elected by the hybridization of states between molecule and substrate surface. PMID:25666850

  15. n and p type character of single molecule diodes.

    PubMed

    Zoldan, Vinícius Claudio; Faccio, Ricardo; Pasa, André Avelino

    2015-02-10

    Looking for single molecule electronic devices, we have investigated the charge transport properties of individual tetra-phenylporphyrin molecules on different substrates by ultrahigh-vacuum scanning tunneling microscopy and spectroscopy and by first-principles calculations. The tetra-phenylporphyrins with a Co atom (Co-TPP) or 2 hydrogens (H2-TPP) in the central macrocycle when deposited on Cu3Au(100) substrates showed a diode-like behavior with p and n type character, respectively. After removing the central hydrogens of H2-TPP molecule with the STM tip an ohmic behavior was measured. The rectifying effect was understood from the theoretical point of view by assuming for Co-TPP HOMO conduction and for H2-TPP LUMO conduction, both selectively elected by the hybridization of states between molecule and substrate surface.

  16. Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor.

    PubMed

    Izak, Tibor; Krátká, Marie; Kromka, Alexander; Rezek, Bohuslav

    2015-05-01

    We show the influence of osteoblastic SAOS-2 cells on the transfer characteristics of nanocrystalline diamond solution-gated field-effect transistors (SGFET) prepared on glass substrates. Channels of these fully transparent SGFETs are realized by hydrogen termination of undoped diamond film. After cell cultivation, the transistors exhibit about 100× increased leakage currents (up to 10nA). During and after the cell delamination, the transistors return to original gate currents. We propose a mechanism where this triggering effect is attributed to ions released from adhered cells, which depends on the cell adhesion morphology, and could be used for cell culture monitoring.

  17. Challenges in p-type Doping of CdTe

    NASA Astrophysics Data System (ADS)

    McCoy, Jedidiah; Swain, Santosh; Lynn, Kelvin

    We have made progress in defect identification of arsenic and phosphorous doped CdTe to understand the self-compensation mechanism which will help improve minority bulk carrier lifetime and net acceptor density. Combining previous measurements of un-doped CdTe, we performed a systematic comparison of defects between different types of crystals and confirmed the defects impacting the doping efficiency. CdTe bulk crystals have been grown via vertical Bridgman based melt growth technique with varying arsenic and phosphorous dopant schemes to attain p-type material. Furnace temperature profiles were varied to influence dopant solubility. Large carrier densities have been reproducibly obtained from these boules indicating successful incorporation of dopants into the lattice. However, these values are orders of magnitude lower than theoretical solubility values. Infrared Microscopy has revealed a plethora of geometrically abnormal second phase defects and X-ray Fluorescence has been used to identify the elemental composition of these defects. We believe that dopants become incorporated into these second phase defects as Cd compounds which act to inhibit dopant solubility in the lattice.

  18. Magnetic Incommensurability in p-TYPE Cuprate Perovskites

    NASA Astrophysics Data System (ADS)

    Sherman, A.

    2012-07-01

    For the superconducting phase with a d-wave order parameter and zero temperature, the magnetic susceptibility of the t-J model is calculated using the Mori projection operator technique. Conditions for the appearance of an incommensurate magnetic response below the resonance frequency are identified. A fast decay of the tails of the hole coherent peaks and a weak intensity of the hole incoherent continuum near the Fermi level are enough to produce an incommensurate response using different hole dispersions established for p-type cuprates, in which such response was observed. In this case, the nesting of the itinerant-electron theory or the charge modulation of the stripe theory is unnecessary for the incommensurability. The theory reproduces the hourglass dispersion of the susceptibility maxima with their location in the momentum space similar to that observed experimentally. The upper branch of the dispersion stems from the excitations of localized spins, while the lower one is due to the incommensurate maxima of their damping. The narrow and intensive resonance peak arises if the frequency of these excitations at the antiferromagnetic momentum lies below the edge of the two-fermion continuum; otherwise the maximum is broad and less intensive.

  19. Electronic processes in uniaxially stressed p-type germanium

    SciTech Connect

    Dubon, Jr., Oscar Danilo

    1996-02-01

    Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed increase of responsivity of Ge:Ga detectors with uniaxial stress. Electronic properties of Ge:Cu are shown to change dramatically with uniaxial stress; the results provide a first explanation for the performance of uniaxially stressed, Cu-diffused Ge:Ga detectors which display a high conductivity in absence of photon signal and therefore have poor sensitivity.

  20. P type porous silicon resistivity and carrier transport

    SciTech Connect

    Ménard, S.; Fèvre, A.; Billoué, J.; Gautier, G.

    2015-09-14

    The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P{sub %}) was found to be the major contributor to the PS resistivity (ρ{sub PS}). ρ{sub PS} increases exponentially with P{sub %}. Values of ρ{sub PS} as high as 1 × 10{sup 9} Ω cm at room temperature were obtained once P{sub %} exceeds 60%. ρ{sub PS} was found to be thermally activated, in particular, when the temperature increases from 30 to 200 °C, a decrease of three decades is observed on ρ{sub PS}. Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P{sub %} lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P{sub %} overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices.

  1. Structure of nanocrystalline palladium and copper studied by small angle neutron scattering

    SciTech Connect

    Sanders, P.G.; Weertman, J.R.; Barker, J.G.

    1996-12-01

    The structure of nanocrystalline palladium and copper, made by inert gas condensation and compaction, was studied using small angle neutron scattering (SANS), optical microscopy, and scanning electron microscopy. The effects of annealing and warm compaction were also examined with these techniques. The SANS results were interpreted using a maximum entropy routine, combined with knowledge of the Archimedes density and hydrogen concentration determined by prompt gamma activation analysis (PGAA). Similar hydrogen concentrations were detected by SANS and PGAA. This hydrogen content, which was approximately 5 at.{percent} in samples compacted at room temperature, was reduced by both annealing and warm compaction. Defects in several size classes were observed, including missing grain pores ({approx_equal}1{endash}50 nm diameter) and defects of micrometer size. Warm compaction produced a lower number density of pores in nanocrystalline palladium, which led to increased density. The observed structure was correlated with Vickers microhardness and fracture surface morphology. {copyright} {ital 1996 Materials Research Society.}

  2. P-type Ca2+ current in crayfish peptidergic neurones.

    PubMed

    GarcÍA-Colunga; Valdiosera; GarcÍA

    1999-01-21

    Inward Ca2+ current through voltage-gated Ca2+ channels was recorded from freshly dissociated crayfish X-organ (XO) neurones using the whole-cell voltage-clamp technique. Changing the holding potential from -50 to -90 mV had little effect on the characteristics of the current-voltage relationship: neither the time course nor the amplitude of the Ca2+ current was affected. Inactivation of the Ca2+ current was observed over a small voltage range, between -35 and -10 mV, with half-inactivation at -20 mV. The activation of the Ca2+ current was modelled using Hodgkin-Huxley kinetics. The time constant of activation, &tgr; m, was 568+/-66 micros at -20 mV and decreased gradually to 171+/-23 micros at 40 mV (means +/- s.e.m., N=5). The steady-state activation, m(infinity), was fitted with a Boltzmann function, with a half-activation voltage of -7.45 mV and an apparent threshold at -40 mV. The instantaneous current-voltage relationship was adjusted using the Goldman-Hodgkin-Katz constant-field equation, giving a permeation of 4.95x10(-5 )cm s-1. The inactivation of the Ca2+ current in XO neurones was dependent on previous entry of Ca2+. Using a double-pulse protocol, the inactivation was fitted to a U-shaped curve with a maximal inactivation of 35 % at 30 mV. The time course of the recovery from inactivation was fitted with an exponential function. The time constants were 17+/-2.6 ms for a prepulse of 10 ms and 31+/-3.2 ms for a prepulse of 20 ms. The permeability sequence of the Ca2+ channels was as follows: Ba2+>Sr2+~Ca2+>Mg2+. Other divalent cations blocked the Ca2+ current, and their effects were voltage-dependent; the potency of blockage was Cd2+~Zn2+>Co2+~Ni2+. The peptide &ohgr; -agatoxin-IVA, a selective toxin for P-type Ca2+ channels, blocked 85 % of the Ca2+ current in XO neurones at 200 nmol l-1, but the current was insensitive to dihydropyridines, phenylalkylamines, &ohgr; -conotoxin-GVIA and &ohgr; -conotoxin-MVIIC, which are blockers of L-, N- and Q-type Ca2

  3. Irradiation and annealing of p-type silicon carbide

    SciTech Connect

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor'eva, Maria V.; Lebedev, Sergey P.; Kozlovski, Vitaly V.

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  4. Membrane Targeting of P-type ATPases in Plant Cells

    SciTech Connect

    Jeffrey F. Harper, Ph.D.

    2004-06-30

    How membrane proteins are targeted to specific subcellular locations is a very complex and poorly understood area of research. Our long-term goal is to use P-type ATPases (ion pumps), in a model plant system Arabidopsis, as a paradigm to understand how members of a family of closely related membrane proteins can be targeted to different subcellular locations. The research is divided into two specific aims. The first aim is focused on determining the targeting destination of all 10 ACA-type calcium pumps (Arabidopsis Calcium ATPase) in Arabidopsis. ACAs represent a plant specific-subfamily of plasma membrane-type calcium pumps. In contrast to animals, the plant homologs have been found in multiple membrane systems, including the ER (ACA2), tonoplast (ACA4) and plasma membrane (ACA8). Their high degree of similarity provides a unique opportunity to use a comparative approach to delineate the membrane specific targeting information for each pump. One hypothesis to be tested is that an endomembrane located ACA can be re-directed to the plasma membrane by including targeting information from a plasma membrane isoform, ACA8. Our approach is to engineer domain swaps between pumps and monitor the targeting of chimeric proteins in plant cells using a Green Fluorescence Protein (GFP) as a tag. The second aim is to test the hypothesis that heterologous transporters can be engineered into plants and targeted to the plasma membrane by fusing them to a plasma membrane proton pump. As a test case we are evaluating the targeting properties of fusions made between a yeast sodium/proton exchanger (Sod2) and a proton pump (AHA2). This fusion may potentially lead to a new strategy for engineering salt resistant plants. Together these aims are designed to provide fundamental insights into the biogenesis and function of plant cell membrane systems.

  5. Pore distributions in nanocrystalline metals from small-angle neutron scattering

    SciTech Connect

    Sanders, P.G.; Weertman, J.R.; Eastman, J.A.

    1998-07-24

    Recent upgrades in inert-gas condensation processing equipment have produced nanocrystalline metal samples with high densities and low-impurity levels. Typical Cu and Pd samples have densities {ge}98% of theoretical and oxygen and hydrogen impurity concentrations {le}0.5 at. %. Lower porosity and impurity levels may make it difficult to produce and maintain samples with the smallest nanocrystalline grain sizes. These improved samples were studied by small-angle neutron scattering (SANS) to determine the volume fraction and size distribution of pores. Excellent correlation was obtained between the total volume fraction of pores and the Archimedes density for Pd, signifying that most of the pores were relatively small and in the detectability range of SANS ({approx}1--100 nm). Nanocrystalline Cu is shown to exhibit a wider pore size distribution. For Pd, the average pore sizes were slightly smaller than the average grain size, while for Cu the pore size and grain size were about the same. Both materials exhibited a trend of increasing pore size with increasing grain size. In terms of processing prerequisites, the principal condition for the production of high-density nanocrystalline Cu is an exceptionally clean synthesis environment, while nanocrystalline Pd requires compaction at elevated temperatures. These differences are the result of Cu having both a lower melting point and a greater susceptibility to contamination by gaseous impurities such as oxygen.

  6. Picosecond intersubband hole relaxation in p-type quantum wells

    SciTech Connect

    Xu, Z.; Fauchet, P.M.; Rella, C.W.; Schwettman, H.A.

    1995-12-31

    We report the first direct measurement of the relaxation time of holes in p-type quantum wells using tunable, subpicosecond mid-infrared laser pulses in a pump-probe arrangement. The QW layers consisted of 50 In{sub 0.5}Ga{sub 0.5}As/Al{sub 0.5}Ga{sub 0.5}As periods. The In{sub 0.5}Ga{sub 0.5}As well was 4 nm wide and the Al{sub 0.5}Ga{sub 0.5}As barrier was 8 nm wide. The dopant concentration was 10{sup 19} CM{sup -3} which corresponds to a sheet density of 1.2 x 10{sup 13} CM{sup -2}. The room temperature IR spectrum showed a 50 meV wide absorption peak at 5.25 {mu}m (220 meV). This energy agrees with the calculated n=1 heavy hole to n=1 light hole transition energy of 240 meV (150 meV for strain and 90 meV for confinement). The large absorption width results from hole-hole scattering and the difference in dispersion relations between the two subbands. The equal-wavelength pump-probe transmission measurements were performed using the Stanford free electron laser (FEL). The FEL pulses were tuned between 4 and 6 {mu} m and their duration was less than 1 ps. The measurements were performed as a function of temperature, pump wavelength and intensity (from 0.3 to 10 GW/cm{sup 2}). In all our experiments, we find an increase of transmission (decrease of absorption or bleaching) following photopumping, which recovers as a single exponential with a time constant (relaxation time) of the order of 1 picosecond. The maximum change in transmission is linear with pump 2 intensity below 1 GW/cm{sup 2} and saturates to {approximately}3% with a saturation intensity I{sub sat} of 3 GW/cm{sup 2}. As the saturation regime is entered, the relaxation time increases from 0.8 ps to 1.8 ps. This relaxation time depends on the temperature T: it increases from 0.8 ps to 1.3 ps as T decreases from 300 K to 77 K. Finally, when we tune the laser through the absorption band, the magnitude of the signal changes but its temporal behavior does not change, within the accuracy of the measurements.

  7. Ionic Conduction in Nanocrystalline Materials

    DTIC Science & Technology

    2000-02-10

    photo- largely due to oxygen desorption from particle voltaic cells and as the photocatalyst in water surfaces. The latter interpretation...and Tuller [22] prepared dense (-95%) temperature, where bulk reduction was observed. At compacts of TiO2 with the anatase phase. The lower... TiO2 , evidence preparation. is mixed. Nanocrystalline rutile appears to exhibit higher ionic conductivity than single crystal rutile while

  8. Laser Compression of Nanocrystalline Metals

    NASA Astrophysics Data System (ADS)

    Meyers, Marc

    2009-06-01

    Laser compression carried out at the Omega and Janus yields new information on the deformation mechanisms of nanocrystalline Ni. Although conventional deformation does not produce hardening, the extreme regime imparted by laser compression generates an increase in hardness, attributed to the residual dislocations observed in the structure by TEM. An analytical model is applied to predict the critical pressures for the cell-stacking-faults transition in single-crystalline nickel and the onset twinning in nanocrystalline nickel. The slip-twinning transition pressure is shifted from 20 GPa, for polycrystalline Ni, to 80 GPa, for Ni with g. s. of 10 nm. Contributions to the net strain from the mechanisms of plastic deformation (partials, perfect dislocations, twinning, and gb shear) were quantified in the nanocrystalline samples through MD calculations. The effect of release, a phenomenon often neglected in MD simulations, on dislocation behavior was established. A large fraction of the dislocations generated at the front are annihilated.[4pt] In collaboration with Hussam Jarmakani, University of California, San Diego; Eduardo Bringa, U. Nacional de Cuyo; Bruce Remington, Lawrence Livermore National Laboratory; V. Nhon, University of Illinois; P. Earhart and Morris Wang, Lawrence Livermore National Laboratory.

  9. Large piezoresistive effect in surface conductive nanocrystalline diamond

    SciTech Connect

    Janssens, S. D. Haenen, K.; Drijkoningen, S.

    2014-09-08

    Surface conductivity in hydrogen-terminated single crystal diamond is an intriguing phenomenon for fundamental reasons as well as for application driven research. Surface conductivity is also observed in hydrogen-terminated nanocrystalline diamond although the electronic transport mechanisms remain unclear. In this work, the piezoresistive properties of intrinsic surface conductive nanocrystalline diamond are investigated. A gauge factor of 35 is calculated from bulging a diamond membrane of 350 nm thick, with a diameter of 656 μm and a sheet resistance of 1.45 MΩ/sq. The large piezoresistive effect is reasoned to originate directly from strain-induced changes in the resistivity of the grain boundaries. Additionally, we ascribe a small time-dependent fraction of the piezoresistive effect to charge trapping of charge carriers at grain boundaries. In conclusion, time-dependent piezoresistive effect measurements act as a tool for deeper understanding the complex electronic transport mechanisms induced by grain boundaries in a polycrystalline material or nanocomposite.

  10. Microstructure and Near Infrared Absorption of PbS Films Deposited by Chemical Bath Deposition on p-Type Si(100) Wafers

    NASA Astrophysics Data System (ADS)

    Guo, Rui-Fang; Liang, Yan; Gao, Xiao-Yong; Zhu, He-Jie; Zhang, Sa; Liu, Hong-Tao

    2014-12-01

    Nanocrystalline PbS films were synthesized on p-type Si(100) wafers using chemical bath deposition. All of the PbS films are polycrystalline in nature with face -centered cubic (fcc) rock salt structure. The average crystallite size varied from 20 to 74 nm, thereby indicating nanocrystalline films with different molar ratios. The film composed of irregular particles was homogeneous and well adhered to the substrates. Increase in thiourea concentration from 0.5 to 2.0 M resulted into an increase in the lateral particle size and film thickness, while further increase in thiourea concentration caused a decrease in particle size and film thickness. The absorption edge of the films blueshifted slightly with increased molarities of lead sources, blueshifted initially, and then redshifted with increased molarities of sulfur sources at a fixed lead source molarities. The blueshift and redshift of the absorption edge were closely related to the change in the tensile stress of the PbS films subjected to.

  11. Plastic deformation mechanisms in nanocrystalline metallic materials

    NASA Astrophysics Data System (ADS)

    Ovid'ko, Ilya A.

    2013-11-01

    This article discusses the experiments, computer simulations, and theoretical models addressing the conventional and specific mechanisms of plastic deformation in nanocrystalline metallic materials. Particular attention is devoted to the competition between lattice dislocation slip and specific deformation mechanisms mediated by grain boundaries as well as its sensitivity to grain size and other parameters of nanocrystalline metallic structures.

  12. Nanostructured p-type semiconducting transparent oxides: promising materials for nano-active devices and the emerging field of "transparent nanoelectronics".

    PubMed

    Banerjee, Arghya; Chattopadhyay, Kalyan K

    2008-01-01

    Transparent conducting oxides (TCO) with p-type semiconductivity have recently gained renewed interest for the fabrication of all-oxide transparent junctions, having potential applications in the emerging field of 'Transparent' or 'Invisible Electronics'. This kind of transparent junctions can be used as a "functional" window, which will transmit visible portion of solar radiation, but generates electricity by the absorption of the UV part. Therefore, these devices can be used as UV shield as well as UV cells. In this report, a brief review on the research activities on various p-TCO materials is furnished along-with the fabrication of different transparent p-n homojunction, heterojunction and field-effect transistors. Also the reason behind the difficulties in obtaining p-TCO materials and possible solutions are discussed in details. Considerable attention is given in describing the various patent generations on the field of p-TCO materials as well as transparent p-n junction diodes and light emitting devices. Also, most importantly, a detailed review and patenting activities on the nanocrystalline p-TCO materials and transparent nano-active device fabrication are furnished with considerable attention. And finally, a systematic description on the fabrication and characterization of nanocrystalline, p-type transparent conducting CuAlO(2) thin film, deposited by cost-effective low-temperature DC sputtering technique, by our group, is furnished in details. These p-TCO micro/nano-materials have wide range of applications in the field of optoelectronics, nanoelectronics, space sciences, field-emission displays, thermoelectric converters and sensing devices.

  13. Comparative chemical genomics reveal that the spiroindolone antimalarial KAE609 (Cipargamin) is a P-type ATPase inhibitor

    PubMed Central

    Goldgof, Gregory M.; Durrant, Jacob D.; Ottilie, Sabine; Vigil, Edgar; Allen, Kenneth E.; Gunawan, Felicia; Kostylev, Maxim; Henderson, Kiersten A.; Yang, Jennifer; Schenken, Jake; LaMonte, Gregory M.; Manary, Micah J.; Murao, Ayako; Nachon, Marie; Stanhope, Rebecca; Prescott, Maximo; McNamara, Case W.; Slayman, Carolyn W.; Amaro, Rommie E.; Suzuki, Yo; Winzeler, Elizabeth A.

    2016-01-01

    The spiroindolones, a new class of antimalarial medicines discovered in a cellular screen, are rendered less active by mutations in a parasite P-type ATPase, PfATP4. We show here that S. cerevisiae also acquires mutations in a gene encoding a P-type ATPase (ScPMA1) after exposure to spiroindolones and that these mutations are sufficient for resistance. KAE609 resistance mutations in ScPMA1 do not confer resistance to unrelated antimicrobials, but do confer cross sensitivity to the alkyl-lysophospholipid edelfosine, which is known to displace ScPma1p from the plasma membrane. Using an in vitro cell-free assay, we demonstrate that KAE609 directly inhibits ScPma1p ATPase activity. KAE609 also increases cytoplasmic hydrogen ion concentrations in yeast cells. Computer docking into a ScPma1p homology model identifies a binding mode that supports genetic resistance determinants and in vitro experimental structure-activity relationships in both P. falciparum and S. cerevisiae. This model also suggests a shared binding site with the dihydroisoquinolones antimalarials. Our data support a model in which KAE609 exerts its antimalarial activity by directly interfering with P-type ATPase activity. PMID:27291296

  14. Surface acoustic wave hydrogen sensor

    NASA Technical Reports Server (NTRS)

    Bhethanabotla, Venkat R. (Inventor); Bhansali, Shekhar (Inventor)

    2006-01-01

    The present invention provides a delay line SAW device fabricated on a lithium niobate substrate and coated with a bilayer of nanocrystalline or other nanomaterials such as nanoparticles or nanowires of palladiumn and metal free pthalocyanine which will respond to hydrogen gas in near real time, at low (room) temperature, without being affected by CO, O.sub.2, CH.sub.4 and other gases, in air ambient or controlled ambient, providing sensitivity to low ppm levels.

  15. Morphological, luminescence and structural properties of nanocrystalline silicon thin films

    SciTech Connect

    Ali, Atif Mossad; Kobayashi, Hikaru; Inokuma, Takao; Al-Hajry, Ali

    2013-03-15

    Highlights: ► The PL spectra showed two stronger peaks and one weaker peak. ► The PL peak energies and optical band-gap values were found higher than 1.12 eV. ► The structural change from an amorphous to nanocrystalline with increasing [SiH{sub 4}]. - Abstract: Nanocrystalline silicon (nc-Si) thin films deposited by plasma-enhanced chemical vapor deposition at various silane flow rates ([SiH{sub 4}]) are studied. The characterization of these films by high-resolution transmission electron microscopy, Raman spectroscopy and X-ray diffraction reveals that no film and very thin film is deposited at [SiH{sub 4}] = 0.0 and 0.1 sccm, respectively. In addition, the structural change from an amorphous to a nanocrystalline phase occurs at around [SiH{sub 4}] = 0.2 sccm. In this study, the importance of arriving species at surfaces and precursors is clearly demonstrated by the effect of a small addition of SiH{sub 4} on the frequency and width of a Raman peak and the structure of the grown film. The infrared spectroscopic analysis shows no hydrogen incorporation in the nc-Si film deposited at the low value of [SiH{sub 4}]. However, the intensity of the peak around 2100 cm{sup −1} due to SiH decreases with increasing [SiH{sub 4}]. All fabricated films give photoluminescence in the range between 1.7 and 2.4 eV at room temperature, indicating enlargement of the band-gap energy. The presence of very small crystallites leads to the appearance of quantum confinement effects. The variations of the photoluminescence energy and spectral width are well correlated with the structural properties of the films such as crystallite size, crystalline volume fraction, and the density of Si-H bonds.

  16. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

    DOEpatents

    Albright, Scot P.; Chamberlin, Rhodes R.

    1996-03-26

    A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.

  17. Multifunctionality of nanocrystalline lanthanum ferrite

    NASA Astrophysics Data System (ADS)

    Rai, Atma; Thakur, Awalendra K.

    2016-05-01

    Nanocrystalline lanthanum ferrite has been synthesized by adopting modified Pechini route. No evidence of impurity or secondary phase has been detected up to the detection of error limit of X-ray diffractometer (XRD). Rietveld refinement of X-ray diffraction pattern reveals orthorhombic crystal system with space group Pnma (62).Crystallite size and lattice strain was found to be ˜42.8nm and 0.306% respectively. Optical band gap was found to be 2.109 eV, by UV-Visible diffused reflectance spectrum (DRS). Brunauer-Emmet-Teller (BET) surface area was found to be ˜3.45 m2/g. Magnetization-hysteresis (M-H) loop was recorded at room temperature (300K) reveals weak ferromagnetism in Nanocrystalline lanthanum ferrite. The weak ferromagnetism in lanthanum ferrite is due to the uncompensated antiferromagnetic spin ordering. Ferroelectric loop hysteresis observed at room temperature at 100Hz depicts the presence of ferroelectric ordering in LaFeO3.Simultanious presence of magnetic and ferroelectric ordering at room temperature makes it suitable candidate of Multiferroic family.

  18. Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1-x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells.

    PubMed

    Xu, Xiaojie; Bullock, James; Schelhas, Laura T; Stutz, Elias Z; Fonseca, Jose J; Hettick, Mark; Pool, Vanessa L; Tai, Kong Fai; Toney, Michael F; Fang, Xiaosheng; Javey, Ali; Wong, Lydia Helena; Ager, Joel W

    2016-03-09

    P-type transparent conducting films of nanocrystalline (CuS)x:(ZnS)1-x were synthesized by facile and low-cost chemical bath deposition. Wide angle X-ray scattering (WAXS) and high resolution transmission electron microscopy (HRTEM) were used to evaluate the nanocomposite structure, which consists of sub-5 nm crystallites of sphalerite ZnS and covellite CuS. Film transparency can be controlled by tuning the size of the nanocrystallites, which is achieved by adjusting the concentration of the complexing agent during growth; optimal films have optical transmission above 70% in the visible range of the spectrum. The hole conductivity increases with the fraction of the covellite phase and can be as high as 1000 S cm(-1), which is higher than most reported p-type transparent materials and approaches that of n-type transparent materials such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) synthesized at a similar temperature. Heterojunction p-(CuS)x:(ZnS)1-x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact. Under 1 sun illumination, an open circuit voltage of 535 mV was observed. This value compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact, such as single-walled carbon nanotube/Si (370-530 mV) and graphene/Si (360-552 mV).

  19. Reversible p-type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Mannam, Ramanjaneyulu; Kumar, E. Senthil; DasGupta, Nandita; Ramachandra Rao, M. S.

    2017-04-01

    We demonstrate reversible p-type nature of pulsed laser deposited (P, N) codoped ZnO thin films using rapid thermal annealing process. As grown thin films exhibited change in conductivity from p to n-type over a span of 120 days. Non-annealed n-type thin films contain unintentional donor impurities such as hydrogen and carbon. X-ray photoelectron spectroscopy and Raman measurements conclusively show that hydrogen passivates nitrogen acceptors by forming Nsbnd H complex. Carbon can be annealed out at 600 °C, whereas, the dissociation of Nsbnd H complex takes place at 800 °C. The films revert its p-type nature at an annealing temperature of 800 °C.

  20. Patterned hydrophobic and hydrophilic surfaces of ultra-smooth nanocrystalline diamond layers

    NASA Astrophysics Data System (ADS)

    Mertens, M.; Mohr, M.; Brühne, K.; Fecht, H. J.; Łojkowski, M.; Święszkowski, W.; Łojkowski, W.

    2016-12-01

    In this work, we show that ultra nanocrystalline diamond (UNCD) surfaces have been modified to add them hydrophobic and hydrophilic properties. The nanocrystalline diamond films were deposited using the hot filament chemical vapor deposition (HFCVD) technique. This allows growing diamond on different substrates which can be even 3D or structured. Silicon and, for optical applications, transparent quartz glass are the preferred substrates for UNCD layers growth. Fluorine termination leads to strong hydrophobic properties as indicated by a high contact angle for water of more than 100°. Hydrogen termination shows lesser hydrophobic behavior. Hydrophilic characteristics has been realised with oxygen termination. X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectroscopy (EDX) measurements confirm the oxygen and fluorine- termination on the nanocrystalline diamond surface. Further, by micropatterning using photolithography, multi-terminated layers have been created with both hydrophobic and hydrophilic areas. In addition, we have shown that retermination is achieved, and the properties of the surface have been changed from hydrophobic to hydrophilic and vice versa. Micro- roughness and stress in the grown film influences slightly the wetting angle as well. The opportunity to realize local differences in hydrophobicity on nanocrystalline diamond layers, in any size or geometry, offers interesting applications for example in microbiological investigations. Multi-terminated arrays show identical surface roughness and at the same time differences in hydrophobicity. These arrays have been visualized with scanning electron microscopy (SEM) and lateral force microscopy (LFM).

  1. Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates

    DOEpatents

    Carlisle, John A.; Gruen, Dieter M.; Auciello, Orlando; Xiao, Xingcheng

    2009-07-07

    A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500.degree. C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 10.sup.10sites/cm.sup.2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500.degree. C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500.degree. C.-4 hours or less onto a variety of substrates such as MEMS devices.

  2. Nanocrystalline silicon based thin film solar cells

    NASA Astrophysics Data System (ADS)

    Ray, Swati

    2012-06-01

    Amorphous silicon solar cells and panels on glass and flexible substrate are commercially available. Since last few years nanocrystalline silicon thin film has attracted remarkable attention due to its stability under light and ability to absorb longer wavelength portion of solar spectrum. For amorphous silicon/ nanocrystalline silicon double junction solar cell 14.7% efficiency has been achieved in small area and 13.5% for large area modules internationally. The device quality nanocrystalline silicon films have been fabricated by RF and VHF PECVD methods at IACS. Detailed characterizations of the materials have been done. Nanocrystalline films with low defect density and high stability have been developed and used as absorber layer of solar cells.

  3. Micromechanics Modeling of Fracture in Nanocrystalline Metals

    NASA Technical Reports Server (NTRS)

    Glaessgen, E. H.; Piascik, R. S.; Raju, I. S.; Harris, C. E.

    2002-01-01

    Nanocrystalline metals have very high theoretical strength, but suffer from a lack of ductility and toughness. Therefore, it is critical to understand the mechanisms of deformation and fracture of these materials before their full potential can be achieved. Because classical fracture mechanics is based on the comparison of computed fracture parameters, such as stress intlmsity factors, to their empirically determined critical values, it does not adequately describe the fundamental physics of fracture required to predict the behavior of nanocrystalline metals. Thus, micromechanics-based techniques must be considered to quanti@ the physical processes of deformation and fracture within nanocrystalline metals. This paper discusses hndamental physicsbased modeling strategies that may be useful for the prediction Iof deformation, crack formation and crack growth within nanocrystalline metals.

  4. Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

    SciTech Connect

    Lin, Chi-Chou; Kuo, Yue

    2014-02-28

    Metal-oxide-semiconductor capacitors made of the nanocrystalline cadmium selenide nc-CdSe embedded Zr-doped HfO{sub 2} high-k stack on the p-type silicon wafer have been fabricated and studied for their charge trapping, detrapping, and retention characteristics. Both holes and electrons can be trapped to the nanocrystal-embedded dielectric stack depending on the polarity of the applied gate voltage. With the same magnitude of applied gate voltage, the sample can trap more holes than electrons. A small amount of holes are loosely trapped at the nc-CdSe/high-k interface and the remaining holes are strongly trapped to the bulk nanocrystalline CdSe site. Charges trapped to the nanocrystals caused the Coulomb blockade effect in the leakage current vs. voltage curve, which is not observed in the control sample. The addition of the nanocrystals to the dielectric film changed the defect density and the physical thickness, which are reflected on the leakage current and the breakdown voltage. More than half of the originally trapped holes can be retained in the embedded nanocrystals for more than 10 yr. The nanocrystalline CdSe embedded high-k stack is a useful gate dielectric for this nonvolatile memory device.

  5. Improving the ductility of nanocrystalline bcc metals.

    PubMed

    Farkas, Diana; Hyde, Brian

    2005-12-01

    Nanocrystalline metals present extremely high yield strengths but limited ductility. Using atomistic simulations, we show that the fracture resistance of bcc nanocrystalline materials increases with decreasing grain size below a critical grain size. There appears to be a "most brittle" grain size corresponding to the "strongest size" that has been postulated. Impurities that strengthen the grain boundaries can improve ductility significantly for the relatively larger grain sizes, whereas ductility decreases for the smallest grain sizes.

  6. Ultra-thin ohmic contacts for p-type nitride light emitting devices

    DOEpatents

    Raffetto, Mark [Raleigh, NC; Bharathan, Jayesh [Cary, NC; Haberern, Kevin [Cary, NC; Bergmann, Michael [Chapel Hill, NC; Emerson, David [Chapel Hill, NC; Ibbetson, James [Santa Barbara, CA; Li, Ting [Ventura, CA

    2012-01-03

    A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.

  7. Greener synthesis of nanocrystalline ZSM-5

    NASA Astrophysics Data System (ADS)

    Nada, Majid Hameed

    Nanocrystalline ZSM-5 zeolite, which is a well-known catalyst used in a variety of applications in industry, environment, and medicine, can be synthesized using different methods. However, a big challenge in synthesizing nanocrsytalline ZSM-5 is the use of an organic template such as TPAOH, which is very expensive. The template is required to facilitate the growth of the nanocrsytalline ZSM-5 during the synthesis. However, to use the nanocrsytalline ZSM-5, the template has to be removed by a calcination process to open the pores and reveal the active surface of the nanocrystalline ZSM-5. The calcination process requires a high temperature for a long time to remove the organic template. Consequently, synthesizing nanocrystalline ZSM-5 by using a templated method is considered to be time, energy, and materials inefficient. In addition, the production of CO2 from the calcination process is a negative impact on the environment. Therefore, finding another method to synthesize nanocrystalline ZSM-5 without using an organic template would be beneficial. Here, nanocrystalline ZSM-5 was synthesized successfully in high yield and quality by using a seed-assisted method and without using the organic template. In addition, the effect of synthesis temperature, synthesis time, basic environment, amount of seeds, size of seeds, aging time, and use of calcined and uncalcined seeds are investigated in this study. The synthesized nanocrystalline ZSM-5 materials were characterized by using X-ray diffraction (XRD), gas adsorption isotherm (BET/BJH), and transmission electron microscopy (TEM).

  8. Luminance behavior of lithium-doped ZnO nanowires with p-type conduction characteristics.

    PubMed

    Ko, Won Bae; Lee, Jun Seok; Lee, Sang Hyo; Cha, Seung Nam; Sohn, Jung Inn; Kim, Jong Min; Park, Young Jun; Kim, Hyun Jung; Hong, Jin Pyo

    2013-09-01

    The present study describes the room-temperature cathodeluminescence (CL) and temperature-dependent photoluminescence (PL) properties of p-type lithium (Li)-doped zinc oxide (ZnO) nanowires (NWs) grown by hydrothermal doping and post-annealing processes. A ZnO thin film was used as a seed layer in NW growth. The emission wavelengths and intensities of undoped ZnO NWs and p-type Li-doped ZnO NWs were analyzed for comparison. CL and PL observations of post-annealed p-type Li-doped ZnO NWs clearly exhibited a dominant sharp band-edge emission. Finally, a n-type ZnO thin film/p-type annealed Li-doped ZnO NW homojunction diode was prepared to confirm the p-type conduction of annealed Li-doped ZnO NWs as well as the structural properties measured by transmission electron microscopy.

  9. Electronic structure studies of nanocrystalline diamond grain boundaries

    SciTech Connect

    Zapol, P.; Sternberg, M.; Frauenheim, T.; Gruen, D. M.; Curtiss, L. A.

    1999-11-29

    Diamond growth from hydrogen-poor plasmas results in diamond structures that are profoundly different from conventionally CVD-grown diamond. High concentration of carbon dimers in the microwave plasma results in a high rate of heterogeneous renucleation leading to formation of nanocrystalline diamond with a typical grain size of 3--10 nm. Therefore, up to 10% of carbon atoms are located in the grain boundaries. In this paper the authors report on density-functional based tight-binding molecular dynamics calculations of the structure of a {Sigma}13 twist (100) grain boundary in diamond. Beginning with a coincidence site lattice model, simulated annealing of the initial structure was performed at 1,500 K followed by relaxation toward lower temperatures. About one-half of the carbons in the grain boundary are found to be three-coordinated. Coordination numbers, bond length and bond angle distributions are analyzed and compared to those obtained in previous studies.

  10. Grain boundaries and mechanical properties of nanocrystalline diamond films.

    SciTech Connect

    Busmann, H.-G.; Pageler, A.; Gruen, D. M.

    1999-08-06

    Phase-pure nanocrystalline diamond thin films grown from plasmas of a hydrogen-poor carbon argon gas mixture have been analyzed regarding their hardness and elastic moduli by means of a microindentor and a scanning acoustic microscope.The films are superhard and the moduli rival single crystal diamond. In addition, Raman spectroscopy with an excitation wavelength of 1064 nm shows a peak at 1438 l/cm and no peak above 1500 l/cm, and X-ray photoelectron spectroscopy a shake-up loss at 4.2 eV. This gives strong evidence for the existence of solitary double bonds in the films. The hardness and elasticity of the films then are explained by the assumption, that the solitary double bonds interconnect the nanocrystals in the films, leading to an intergrain boundary adhesion of similar strength as the intragrain diamond cohesion. The results are in good agreement with recent simulations of high-energy grain boundaries.

  11. Nanocrystalline hydroxyapatite prepared under various pH conditions.

    PubMed

    Palanivelu, R; Mary Saral, A; Ruban Kumar, A

    2014-10-15

    Hydroxyapatite (HAP) has sovereign biomedical application due to its excellent biocompatibility, chemical and crystallographic similitude with natural human bone. In this present work, we discussed about the role of pH in the synthesis of calcium phosphate compound using calcium nitrate tetrahydrate and di-ammonium hydrogen phosphate as starting materials by chemical precipitation method assisted with ultrasonic irradiation technique. 5% polyethylene glycol (PEG600) is added along with the precursors under various pH condition of 7, 9 and 11 respectively. The functional group analysis, crystallized size and fraction of crystallized size are confirmed using Fourier Transformation Infra-Red spectroscopy and X-ray diffraction pattern. Morphological observations are done by scanning electron microscope. The results revealed the presence of nanocrystalline hydroxyapatite at pH above 9.

  12. Nanocrystalline cellulose from coir fiber: preparation, properties, and applications

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Nanocrystalline cellulose derived from various botanical sources offers unique and potentially useful characteristics. In principle, any cellulosic material can be considered as a potential source of a nanocrystalline material, including crops, crop residues, and agroindustrial wastes. Because of t...

  13. Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

    SciTech Connect

    Sun, Chang Rougieux, Fiacre E.; Macdonald, Daniel

    2014-06-07

    Injection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cr{sub i} and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σ{sub n}/σ{sub p} of Cr{sub i} and CrB are determined as 3.2 (−0.6, +0) and 5.8 (−3.4, +0.6), respectively. Courtesy of a direct experimental comparison of the recombination activity of chromium in n- and p-type silicon, and as also suggested by modelling results, we conclude that chromium has a greater negative impact on carrier lifetimes in p-type silicon than n-type silicon with similar doping levels.

  14. Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

    NASA Astrophysics Data System (ADS)

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan

    2017-01-01

    Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet-visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

  15. High performance p-type thermoelectric materials and methods of preparation

    NASA Technical Reports Server (NTRS)

    Caillat, Thierry (Inventor); Borshchevsky, Alexander (Inventor); Fleurial, Jean-Pierre (Inventor)

    2005-01-01

    The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4-xAxSb3-yBy wherein 0?x?4, A is a transition metal, B is a pnicogen, and 0?y?3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

  16. Stress control of heterogeneous nanocrystalline diamond sphere through pressure-temperature tuning

    NASA Astrophysics Data System (ADS)

    Ding, Wei; Han, Jingjing; Hu, Qiwei; Chen, Yang; Liu, Fangming; Liu, Yinjuan; Gou, Li; He, Duanwei; Zhan, Guodong

    2017-03-01

    The hollow nanocrystalline diamond (NCD) sphere, a promising ablator material for inertial confinement fusion capsule, is generally fabricated by the chemical vapor deposition method. Herein, we report on a method to transform hydrogenated tetrahedral amorphous carbon coatings on spherical molybdenum (Mo) substrates into nanocrystalline diamond films via a designed high pressure high temperature (HPHT) treatment that balances the mismatch in the thermal expansion coefficient between a diamond coating and the Mo substrate through the difference in the bulk modulus. The results show that the density and strength of the diamond shell increase significantly and the residual stress is eliminated as well. The methodology of the designed HPHT treatment can not only provide an alternative way to fabricate NCD spheres but also can apply to other heterogeneous material stress control applications.

  17. Opto-electrical properties of Sb-doped p-type ZnO nanowires

    SciTech Connect

    Kao, Tzu-Hsuan; Chen, Jui-Yuan; Chiu, Chung-Hua; Huang, Chun-Wei; Wu, Wen-Wei

    2014-03-17

    P-type ZnO nanowires (NWs) have attracted much attention in the past years due to the potential applications for optoelectronics and piezotronics. In this study, we have synthesized Sb-doped p-type ZnO NWs on Si (100) substrates by chemical vapor deposition with Aucatalyst. The Sb-doped ZnO NWs are single crystalline with high density, grown along [1-1-2] direction. The doping percentage of Sb is about 2.49%, which has been confirmed by X-ray photoelectron spectroscopy. The ZnO NW field effect transistor demonstrated its p-type characteristics. A high responsivity to ultraviolet photodetection was also observed. In addition, compared to intrinsic ZnO NWs, the conductivity of the Sb-doped ZnO NWs exhibited ∼2 orders of magnitude higher. These properties make the p-type ZnO NWs a promising candidate for electronic and optoelectronic devices.

  18. Simulation and bonding of dopants in nanocrystalline diamond.

    PubMed

    Barnard, A S; Russo, S P; Snook, I K

    2005-09-01

    The doping of the wide-band gap semiconductor diamond has led to the invention of many electronic and optoelectronic devices. Impurities can be introduced into diamond during chemical vapor deposition or high pressure-high temperature growth, resulting in materials with unusual physical and chemical properties. For electronic applications one of the main objectives in the doping of diamond is the production of p-type and n-type semiconductors materials; however, the study of dopants in diamond nanoparticles is considered important for use in nanodevices, or as qubits for quantum computing. Such devices require that bonding of dopants in nanodiamond must be positioned substitutionally at a lattice site, and must exhibit minimal or no possibility of diffusion to the nanocrystallite surface. In light of these requirements, a number of computational studies have been undertaken to examine the stability of various dopants in various forms of nanocrystalline diamond. Presented here is a review of some such studies, undertaken using quantum mechanical based simulation methods, to provide an overview of the crystal stability of doped nanodiamond for use in diamondoid nanodevices.

  19. Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting.

    PubMed

    Kibria, M G; Zhao, S; Chowdhury, F A; Wang, Q; Nguyen, H P T; Trudeau, M L; Guo, H; Mi, Z

    2014-04-30

    Solar water splitting is one of the key steps in artificial photosynthesis for future carbon-neutral, storable and sustainable source of energy. Here we show that one of the major obstacles for achieving efficient and stable overall water splitting over the emerging nanostructured photocatalyst is directly related to the uncontrolled surface charge properties. By tuning the Fermi level on the nonpolar surfaces of gallium nitride nanowire arrays, we demonstrate that the quantum efficiency can be enhanced by more than two orders of magnitude. The internal quantum efficiency and activity on p-type gallium nitride nanowires can reach ~51% and ~4.0 mol hydrogen h(-1) g(-1), respectively. The nanowires remain virtually unchanged after over 50,000 μmol gas (hydrogen and oxygen) is produced, which is more than 10,000 times the amount of photocatalyst itself (~4.6 μmol). The essential role of Fermi-level tuning in balancing redox reactions and in enhancing the efficiency and stability is also elucidated.

  20. Nanocrystalline ribbons for energy harvesting applications

    NASA Astrophysics Data System (ADS)

    Chiriac, H.; Å¢ibu, M.; Lupu, N.; Skorvanek, I.; Óvári, T.-A.

    2014-05-01

    An energy harvesting device based on nanocrystalline ribbons, able to convert mechanical vibrations to electrical energy, is presented. Such an energy harvesting device having embedded wireless microsensors can provide continuous monitoring of machines or infrastructure health without using service personnel in different areas with high risks. A multilayer core based on magnetic nanocrystalline ribbons was implemented to build the coil for an electromagnetic energy harvesting device with superior characteristics (voltage and power) compared to piezoelectric or pure magnetostrictive devices. Two different configurations were realized and tested for the energy harvester: vibrating core and vibrating magnets. The highest power density achieved for our harvesters using nanocrystalline ribbons is 45 mW/cm3 at 1 g (resonant frequency 47 Hz) and seems to be among the highest reported in literature.

  1. Rapid phase synthesis of nanocrystalline cobalt ferrite

    SciTech Connect

    Shanmugavel, T.; Raj, S. Gokul; Rajarajan, G.; Kumar, G. Ramesh

    2014-04-24

    Synthesis of single phase nanocrystalline Cobalt Ferrite (CoFe{sub 2}O{sub 4}) was achieved by single step autocombustion technique with the use of citric acid as a chelating agent in mono proportion with metal. Specimens prepared with this method showed significantly higher initial permeability's than with the conventional process. Single phase nanocrystalline cobalt ferrites were formed at very low temperature. Surface morphology identification were carried out by transmission electron microscopy (TEM) analysis. The average grain size and density at low temperature increased gradually with increasing the temperature. The single phase formation is confirmed through powder X-ray diffraction analysis. Magnetization measurements were obtained at room temperature by using a vibrating sample magnetometer (VSM), which showed that the calcined samples exhibited typical magnetic behaviors. Temperature dependent magnetization results showed improved behavior for the nanocrystalline form of cobalt ferrite when compared to the bulk nature of materials synthesized by other methods.

  2. Direct Coating of Nanocrystalline Diamond on Steel

    NASA Astrophysics Data System (ADS)

    Tsugawa, Kazuo; Kawaki, Shyunsuke; Ishihara, Masatou; Hasegawa, Masataka

    2012-09-01

    Nanocrystalline diamond films have been successfully deposited on stainless steel substrates without any substrate pretreatments to promote diamond nucleation, including the formation of interlayers. A low-temperature growth technique, 400 °C or lower, in microwave plasma chemical vapor deposition using a surface-wave plasma has cleared up problems in diamond growth on ferrous materials, such as the surface graphitization, long incubation time, substrate softening, and poor adhesion. The deposited nanocrystalline diamond films on stainless steel exhibit good adhesion and tribological properties, such as a high wear resistance, a low friction coefficient, and a low aggression strength, at room temperature in air without lubrication.

  3. Genomic Comparison of P-Type ATPase Ion Pumps in Arabidopsis and Rice1

    PubMed Central

    Baxter, Ivan; Tchieu, Jason; Sussman, Michael R.; Boutry, Marc; Palmgren, Michael G.; Gribskov, Michael; Harper, Jeffrey F.; Axelsen, Kristian B.

    2003-01-01

    Members of the P-type ATPase ion pump superfamily are found in all three branches of life. Forty-six P-type ATPase genes were identified in Arabidopsis, the largest number yet identified in any organism. The recent completion of two draft sequences of the rice (Oryza sativa) genome allows for comparison of the full complement of P-type ATPases in two different plant species. Here, we identify a similar number (43) in rice, despite the rice genome being more than three times the size of Arabidopsis. The similarly large families suggest that both dicots and monocots have evolved with a large preexisting repertoire of P-type ATPases. Both Arabidopsis and rice have representative members in all five major subfamilies of P-type ATPases: heavy-metal ATPases (P1B), Ca2+-ATPases (endoplasmic reticulum-type Ca2+-ATPase and autoinhibited Ca2+-ATPase, P2A and P2B), H+-ATPases (autoinhibited H+-ATPase, P3A), putative aminophospholipid ATPases (ALA, P4), and a branch with unknown specificity (P5). The close pairing of similar isoforms in rice and Arabidopsis suggests potential orthologous relationships for all 43 rice P-type ATPases. A phylogenetic comparison of protein sequences and intron positions indicates that the common angiosperm ancestor had at least 23 P-type ATPases. Although little is known about unique and common features of related pumps, clear differences between some members of the calcium pumps indicate that evolutionarily conserved clusters may distinguish pumps with either different subcellular locations or biochemical functions. PMID:12805592

  4. Deformation of nanocrystalline materials at ultrahigh strain rates - microstructure perspective in nanocrystalline nickel

    SciTech Connect

    Wang, Y; Bringa, E; Victoria, M; Caro, A; McNaney, J; Smith, R; Remington, B

    2006-04-10

    Nanocrystalline materials with grain sizes smaller than 100 nm have attracted extensive research in the past decade. Due to their high strength, these materials are good candidates for high pressure shock loading experiments. In this paper, we investigated the microstructural evolutions of nanocrystalline nickel with grain sizes of 10-50 nm, shock-loaded in a range of pressures (20-70 GPa). A laser-driven isentropic compression process was applied to achieve high shock-pressures in a timescale of nanoseconds and thus the high-strain-rate deformation of nanocrystalline nickel. Postmortem transmission electron microscopy (TEM) examinations reveal that the nanocrystalline structures survive the shock deformation and that dislocation activity is the prevalent deformation mechanism when the grain sizes are larger than 30 nm, without any twinning activity at twice the stress threshold for twin formation in micrometer-sized polycrystals. However, deformation twinning becomes an important deformation mode for 10-20 nm grain-sized samples.

  5. Tailoring nanocrystalline diamond film properties

    DOEpatents

    Gruen, Dieter M.; McCauley, Thomas G.; Zhou, Dan; Krauss, Alan R.

    2003-07-15

    A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.

  6. Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

    SciTech Connect

    Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

    2006-09-21

    Germanium detector arrays are needed for low-level counting facilities. The practical applications of such user facilities include characterization of low-level radioactive samples. In addition, the same detector arrays can also perform important fundamental physics measurements including the search for rare events like neutrino-less double-beta decay. Coaxial germanium detectors having segmented outer contacts will provide the next level of sensitivity improvement in low background measurements. The segmented outer detector contact allows performance of advanced pulse shape analysis measurements that provide additional background reduction. Currently, n-type (reverse electrode) germanium coaxial detectors are used whenever a segmented coaxial detector is needed because the outer boron (electron barrier) contact is thin and can be segmented. Coaxial detectors fabricated from p-type germanium cost less, have better resolution, and are larger than n-type coaxial detectors. However, it is difficult to reliably segment p-type coaxial detectors because thick (~1 mm) lithium-diffused (hole barrier) contacts are the standard outside contact for p-type coaxial detectors. During this Phase 1 Small Business Innovation Research (SBIR) we have researched the possibility of using amorphous germanium contacts as a thin outer contact of p-type coaxial detectors that can be segmented. We have developed amorphous germanium contacts that provide a very high hole barrier on small planar detectors. These easily segmented amorphous germanium contacts have been demonstrated to withstand several thousand volts/cm electric fields with no measurable leakage current (<1 pA) from charge injection over the hole barrier. We have also demonstrated that the contact can be sputter deposited around and over the curved outside surface of a small p-type coaxial detector. The amorphous contact has shown good rectification properties on the outside of a small p-type coaxial detector. These encouraging

  7. Formation of p-type ZnO thin film through co-implantation

    NASA Astrophysics Data System (ADS)

    Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

    2017-01-01

    We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

  8. Native p-type transparent conductive CuI via intrinsic defects

    NASA Astrophysics Data System (ADS)

    Wang, Jing; Li, Jingbo; Li, Shu-Shen

    2011-09-01

    The ability of CuI to be doped p-type via the introduction of native defects has been investigated using first-principles pseudopotential calculations based on density functional theory. The Cu vacancy has a lower formation energy than any of the other native defects, which include I vacancy (VI), Cu interstitial (Cui), I interstitial (Ii), Cu antisite (CuI), and I antisite (ICu). Combined with its shallow acceptor level, it offers sufficient hole concentrations in CuI. The natural band alignments as compared to zinc-blende ZnS, ZnSe, and ZnTe have also been calculated in order to further identify the p-type dopability of CuI. It is found that CuI has a relatively high valence band maximum and conduction band minimum, which also makes it easy to dope CuI p-type in terms of the doping limit rule. In addition, the small effective mass of the light hole—about 0.303m0—can provide high mobility and p-type conductivity in CuI. All of these results make CuI an ideal candidate for native p-type materials

  9. Development of Nano-crystalline Doped-Ceramic Enabled Fiber Sensors for High Temperature In-Situ Monitoring of Fossil Fuel Gases

    SciTech Connect

    Xiao, Hai; Dong, Junhang; Lin, Jerry; Romero, Van

    2012-03-01

    This is a final technical report for the first project year from July 1, 2005 to Jan 31, 2012 for DoE/NETL funded project DE-FC26-05NT42439: Development of Nanocrystalline Doped-Ceramic Enabled Fiber Sensors for High Temperature In-Situ Monitoring of Fossil Fuel Gases. This report summarizes the technical progresses and achievements towards the development of novel nanocrystalline doped ceramic material-enabled optical fiber sensors for in situ and real time monitoring the gas composition of flue or hot gas streams involved in fossil-fuel based power generation and hydrogen production.

  10. Identification and design principles of low hole effective mass p-type transparent conducting oxides

    PubMed Central

    Hautier, Geoffroy; Miglio, Anna; Ceder, Gerbrand; Rignanese, Gian-Marco; Gonze, Xavier

    2013-01-01

    The development of high-performance transparent conducting oxides is critical to many technologies from transparent electronics to solar cells. Whereas n-type transparent conducting oxides are present in many devices, their p-type counterparts are not largely commercialized, as they exhibit much lower carrier mobilities due to the large hole effective masses of most oxides. Here we conduct a high-throughput computational search on thousands of binary and ternary oxides and identify several highly promising compounds displaying exceptionally low hole effective masses (up to an order of magnitude lower than state-of-the-art p-type transparent conducting oxides), as well as wide band gaps. In addition to the discovery of specific compounds, the chemical rationalization of our findings opens new directions, beyond current Cu-based chemistries, for the design and development of future p-type transparent conducting oxides. PMID:23939205

  11. DyP-type peroxidases comprise a novel heme peroxidase family.

    PubMed

    Sugano, Y

    2009-04-01

    Dye-decolorizing peroxidase (DyP) is produced by a basidiomycete (Thanatephorus cucumeris Dec 1) and is a member of a novel heme peroxidase family (DyP-type peroxidase family) that appears to be distinct from general peroxidases. Thus far, 80 putative members of this family have been registered in the PeroxiBase database (http://peroxibase.isbsib.ch/) and more than 400 homologous proteins have been detected via PSI-BLAST search. Although few studies have characterized the function and structure of these proteins, they appear to be bifunctional enzymes with hydrolase or oxygenase, as well as typical peroxidase activities. DyP-type peroxidase family suggests an ancient root compared with other general peroxidases because of their widespread distribution in the living world. In this review, firstly, an outline of the characteristics of DyP from T. cucumeris is presented and then interesting characteristics of the DyP-type peroxidase family are discussed.

  12. High performance P-type thermoelectric materials and methods of preparation

    NASA Technical Reports Server (NTRS)

    Caillat, Thierry (Inventor); Borshchevsky, Alexander (Inventor); Fleurial, Jean-Pierre (Inventor)

    2002-01-01

    The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein 0.ltoreq.x.ltoreq.4, A is a transition metal, B is a pnicogen, and 0.ltoreq.y.ltoreq.3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn.sub.4 Sb.sub.3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

  13. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes

    NASA Astrophysics Data System (ADS)

    Wensheng, Wei; Chunxi, Zhang

    2016-06-01

    Using p+-type crystalline Si with n+-type nanocrystalline Si (nc-Si) and n+-type crystalline Si with p+-type nc-Si mosaic structures as electrodes, a type of power diode was prepared with epitaxial technique and plasma-enhanced chemical vapor deposition (PECVD) method. Firstly, the basic p+-n--n+-type Si diode was fabricated by epitaxially growing p+- and n+-type layers on two sides of a lightly doped n--type Si wafer respectively. Secondly, heavily phosphorus-doped Si film was deposited with PECVD on the lithography mask etched p+-type Si side of the basic device to form a component with mosaic anode. Thirdly, heavily boron-doped Si film was deposited on the etched n+-type Si side of the second device to form a diode with mosaic anode and mosaic cathode. The images of high resolution transmission electronic microscope and patterns of X-ray diffraction reveal nanocrystallization in the phosphorus- and boron-deposited films. Electrical measurements such as capacitance-voltage relation, current-voltage feature and reverse recovery waveform were carried out to clarify the performance of prepared devices. The important roles of (n-)Si/(p+)nc-Si and (n-)Si/(n+)nc-Si junctions in the static and dynamic conduction processes in operating diodes were investigated. The performance of mosaic devices was compared to that of a basic one. Project supported by the National Natural Science Foundation of China (No. 61274006).

  14. Reactive plasma synthesis of nanocrystalline ceramic oxides

    NASA Astrophysics Data System (ADS)

    Sreekumar, K. P.; Vijay, M.; Thiyagarajan, T. K.; Krishnan, K.; Ananthapadmanabhan, P. V.

    2010-02-01

    Reactive plasma synthesis is an attractive route to synthesize nanocrystalline materials. A 40 kW DC non-transferred arc plasma reactor has been designed and developed in our laboratory for synthesis of nanocrystalline materials. The main components of the plasma reactor include a 40 kW DC plasma generator or plasma torch, water-cooled reactor segment, product collection facility, DC power supply, cooling-water system and exhaust gas vent. The system has been used to synthesize nano-crystalline oxides of aluminium, titanium and zirconium. Aluminium metal powder was used as the starting material to synthesize alumina. The hydrides of Ti and Zr were used as the precursor for synthesis of nanocrystalline titania and zirconia respectively. The precursor powders were injected into the thermal plasma jet and were allowed to react with oxygen injected downstream the jet. The precursor powder particles were oxidized 'in-flight' to form nano-sized powder of the respective metal, which deposited on the walls of the reactor and collector assembly. Various analytical tools were used to characterized the products.

  15. Thermal Conductivity of Nanocrystalline Silicon Prepared by Plasma-Enhanced Chemical-Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Jugdersuren, Battogtokh; Liu, Xiao; Kearney, Brian; Queen, Daniel; Metcalf, Thomas; Culbertson, James; Chervin, Christopher; Katz, Michael; Stroud, Rhonda

    Nanocrystallization by ball milling has been used successfully to reduce the thermal conductivity of silicon-germanium alloys (SiGe) and turn them into useful thermoelectric materials at a temperature of a few hundred degrees C. Currently the smallest grain sizes in nanocrystalline SiGe are in the 10 nm range. Germanium is added to scatter short wavelength phonons by impurity scattering. In this work, we report a record low thermal conductivity in nanocrystalline silicon prepared by plasma-enhanced chemical-vapor deposition. By varying hydrogen to silane ratio, we can vary the average grain sizes from greater than 10 nm down to 3 nm, as determined by both the high resolution transmission electron microscopy and X-ray diffraction. The values of thermal conductivity, as measured by the 3 ω technique, can be correspondingly modulated from that of ball-milled nanocrystalline SiGe to a record low level of 0.3 W/mK at room temperature. This low thermal conductivity is only about 1/3 of the minimum thermal conductivity limit of silicon. Possible causes of such a large reduction are discussed. Work supported by the Office of Naval Research.

  16. Magnetic properties of nanocrystalline transition metals

    NASA Astrophysics Data System (ADS)

    Aus, Martin J.

    1999-09-01

    In the past decade, considerable attention has been devoted to the nanoprocessing of magnetic materials to enhance specific magnetic properties. For nanocrystalline materials in which the grain size approaches the dimensions of the domain wall thickness of conventional materials, considerable changes in magnetic behaviour are expected. In the present work, various electrodeposited ferromagnetic nanocrystalline pure metals and alloys were characterized by using a vibrating sample magnetometer. The systems investigated include pure Ni and Co as well as alloys of Ni-P, Ni-Fe and Co-Fe. These studies explored the effect of gram size on coercivity, indicating that the crystallographic texture is more significant than gram size. In addition, these studies reported, for the first time, that saturation magnetization of pore-free electroplated bulk nanocrystalline transition metals and their alloys is relatively little affected by grain size. In contrast, previously reported results for ultra-fine particles and nanomaterials produced from compacted powders showed a strong decrease in saturation magnetization with decreasing grain size. The difference in results for pore-free electrodeposits and ultrafine particles/compacted powders has been attributed to antiferromagnetic surface oxide layers, which is a direct result of large internal porosity in the latter group of materials. Further magnetic studies were completed on nanocrystalline electrodeposits produced by magnetoelectrohydrolysis. The effects of applied magnetic field strength and substrate orientation on saturation magnetization and coercivity of Ni-Fe and Co were explored. The results have shown that both nanoprocessing and electroplating in a magnetic field can improve soft magnetic properties by lowering the coercivity. Thermomagnetic studies examined saturation magnetization as a function of temperature, Curie temperature and coercivity changes during annealing. The Curie temperatures of electrodeposited

  17. Morphology and electron emission properties of nanocrystalline CVD diamond thin films.

    SciTech Connect

    Krauss, A. R.; Gruen, D. M.; Zhou, D.; McCauley, T. G.; Qin, L. C.; Corrigan, T.; Auciello, O.; Chang, R. P. H.

    1998-01-30

    Nanocrystalline diamond thin films have been produced by microwave plasma-enhanced chemical vapor deposition (MPECVD) using C{sub 60}/Ar/H{sub 2} or CH{sub 4}/Ar/H{sub 2} plasmas. Films grown with H{sub 2} concentration {le} 20% are nanocrystalline, with atomically abrupt grain boundaries and without observable graphitic or amorphous carbon phases. The growth and morphology of these films are controlled via a high nucleation rate resulting from low hydrogen concentration in the plasma. Initial growth is in the form of diamond, which is the thermodynamic equilibrium phase for grains {le}5 nm in diameter. Once formed, the diamond phase persists for grains up to at least 15-20 nm in diameter. The renucleation rate in the near-absence of atomic hydrogen is very high ({approximately} 10{sup 10} cm{sup {minus}2} sec{sup {minus}1}), limiting the average grain size to a nearly constant value as the film thickness increases, although the average grain size increases as hydrogen is added to the plasma. For hydrogen concentrations less than {approximately}20%, the growth species is believed to be the carbon dimer, C{sub 2}, rather than the CH{sub 3}* growth species associated with diamond film growth at higher hydrogen concentrations. For very thin films grown from the C{sub 60} precursor, the threshold field (2 to {approximately}60 volts/micron) for cold cathode electron emission depends on the electrical conductivity and on the surface topography, which in turn depends on the hydrogen concentration in the plasma. A model of electron emission, based on quantum well effects at the grain boundaries is presented. This model predicts promotion of the electrons at the grain boundary to the conduction band of diamond for a grain boundary width {approximately} 3--4 {angstrom}, a value within the range observed by TEM.

  18. Defect Physics and Intrinsic p-TYPE Conductivity in Topological Insulator AuTlS2

    NASA Astrophysics Data System (ADS)

    Zhang, Jian-Min; Feng, Wangxiang; Yang, Pei; Shi, Lijie; Zhang, Ying

    2014-01-01

    Using first-principles calculations, we systematically investigate the defect physics in topological insulator AuTlS2. An optimal growth condition is explicitly proposed to guide for the experimental synthesis. The stabilities of various native point defects under different growth conditions and different carrier environments are studied in detail. We show that the p-type conductivity is strongly preferred in AuTlS2, and the band gap can be engineered by the control of intrinsic defects. Our results demonstrate that AuTlS2 is an ideal p-type topological insulator which can be easily integrated with traditional semiconductor.

  19. Dual ohmic contact to N- and P-type silicon carbide

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  20. Carrier removal and defect behavior in p-type InP

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

    1992-01-01

    A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

  1. Low energy electron microscopy and Auger electron spectroscopy studies of Cs-O activation layer on p-type GaAs photocathode

    SciTech Connect

    Jin, Xiuguang; Cotta, Alexandre A. C.; Chen, Gong; N'Diaye, Alpha T.; Schmid, Andreas K.; Yamamoto, Naoto

    2014-11-07

    Work function, photoemission yield, and Auger electron spectra were measured on (001) p-type GaAs during negative electron affinity (NEA) surface preparation, surface degradation, and heating processes. The emission current sensitively depends on work function change and its dependence allows us to determine that the shape of the vacuum barrier was close to double triangular. Regarding the NEA surface degradation during photoemission, we discuss the importance of residual gas components the oxygen and hydrogen. We also found that gentle annealing (≤100 °C) of aged photocathodes results in a lower work function and may offer a patch to reverse the performance degradation.

  2. New Numerical Simulation of the Optical Behavior of Nanocrystalline Silicon Thin Films

    NASA Astrophysics Data System (ADS)

    Besahraoui, F.; Bouizem, Y.; Chahed, L.; Sib, J. D.

    2009-11-01

    The absorption enhancement observed on the CPM spectra of nanotextured silicon thin films should be attributed to light scattering effects. A detailed numerical simulation based on Monte Carlo method is presented to calculate the absorption spectra of hydrogenated nanocrystalline silicon films according to the CPM setup. The calculated spectra of apparent optical absorption coefficient depend mainly on the characteristic parameters of nano-Si:H thin film, denoted crystalline/amorphous fraction which favors bulk light scattering phenomena and the film thickness which leads to the light scattering at the rough surface.

  3. Water as probe molecule for midgap states in nanocrystalline strontium titanate by conventional and synchronous luminescence spectroscopy under ambient conditions

    NASA Astrophysics Data System (ADS)

    Taylor, Sean; Samokhvalov, Alexander

    2017-03-01

    Alkaline earth metal titanates are broad bandgap semiconductors with applications in electronic devices, as catalysts, photocatalysts, sorbents, and sensors. Strontium titanate SrTiO3 is of interest in electronic devices, sensors, in the photocatalytic hydrogen generation, as catalyst and sorbent. Both photocatalysis and operation of electronic devices rely upon the pathways of relaxation of excited charge in the semiconductor, including relaxation through the midgap states. We report characterization of nanocrystalline SrTiO3 at room temperature by "conventional" vs. synchronous luminescence spectroscopy and complementary methods. We determined energies of radiative transitions in the visible range through the two midgap states in the nanocrystalline SrTiO3. Further, adsorption and desorption of vapor of water as "probe molecule" for midgap states in the nanocrystalline SrTiO3 was studied, for the first time, by luminescence spectroscopy under ambient conditions. Emission of visible light from the nanocrystalline SrTiO3 is significantly increased upon desorption of water and decreased (quenched) upon adsorption of water vapor, due to interactions with the surface midgap states.

  4. Rhodium-doped barium titanate perovskite as a stable p-type semiconductor photocatalyst for hydrogen evolution under visible light.

    PubMed

    Maeda, Kazuhiko

    2014-02-12

    Rhodium-doped barium titanate (BaTiO3:Rh) powder was prepared by the polymerized complex (PC) method, and the photocatalytic activity for H2 evolution from water was examined. BaTiO3 is a wide-gap n-type semiconductor having a band gap of 3.0 eV. Doping Rh species into the lattice of BaTiO3 resulted in the formation of new absorption bands in visible light region. Upon visible light (λ > 420 nm), BaTiO3:Rh modified with nanoparticulate Pt as a water reduction promoter was capable of producing H2 from water containing an electron donor such as methanol and iodide. The best material prepared by the PC method exhibited higher activity than that made by a conventional solid-state reaction method. Visible-light-driven Z-scheme water splitting was also accomplished using Pt/BaTiO3:Rh as a building block for H2 evolution in combination with PtOx-loaded WO3 as an O2 evolution photocatalyst in the presence of an IO3(-)/I(-) shuttle redox mediator. Photoelectrochemical analysis indicated that a porous BaTiO3:Rh electrode exhibited cathodic photoresponse due to water reduction in a neutral aqueous Na2SO4 solution upon visible light.

  5. Magnetization processes in nanocrystalline gadolinium.

    PubMed

    Mathew, S P; Kaul, S N

    2012-06-27

    The thermal decline in magnetization, M(T), at fixed magnetic field (H) under 'zero-field-cooled' (ZFC) and 'field-cooled' (FC) conditions, the time evolution of ZFC magnetization, M(ZFC)(t), at fixed temperature and field, M(H) hysteresis loops/isotherms, and ac susceptibility have been measured on polycrystalline Gd samples with average grain sizes of d = 12 and 18 nm. The irreversibility in magnetization, M(irr), occurring below a characteristic temperature that reduces with increasing H, is completely suppressed above a grain-size-dependent threshold field, H*. At low fields (H ≤ 100 Oe), M(irr)(T), like the coercive field, H(c)(T), exhibits a minimum at ∼16 K and a broad peak at ∼50 K before going to zero at T ≃ T(C) (Curie temperature). At fixed temperature (T < T(C)) and field (H ≪ H*), where M(irr) is finite, M(ZFC) has a logarithmic dependence on time. The magnetic viscosity (S) at H = 1 Oe and T ≤ 290 K is independent of the measurement time above ∼2 ms but for t < 2 ms it is strongly time-dependent. S(T) peaks at T ≃ T(C) for H = 1 Oe. A magnetic field reduces the peak height and shifts the peak in S(T) to lower temperatures. All the above observations are put on a consistent theoretical footing within the framework of a model in which the intra-grain magnetizations overcome the energy barriers (brought about by the intra-grain and grain-boundary/interfacial magnetic anisotropies) by the thermal activation process. These field- and temperature-dependent energy barriers, that separate the high-energy metastable (ZFC) state from the stable minimum-energy (FC) state, are independent of time for t ≳ 2 ms and have a very broad distribution. We show that the shape anisotropy plays a decisive role in the magnetization reversal process, and that the magnetocrystalline and magnetostatic fluctuations, prevalent in the grain-boundary and interfacial regions, govern the approach-to-saturation of magnetization in nanocrystalline Gd.

  6. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOEpatents

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  7. Pure silver ohmic contacts to N- and P- type gallium arsenide materials

    DOEpatents

    Hogan, Stephen J.

    1986-01-01

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

  8. Origin and evolution of metal P-type ATPases in Plantae (Archaeplastida)

    PubMed Central

    Hanikenne, Marc; Baurain, Denis

    2013-01-01

    Metal ATPases are a subfamily of P-type ATPases involved in the transport of metal cations across biological membranes. They all share an architecture featuring eight transmembrane domains in pairs of two and are found in prokaryotes as well as in a variety of Eukaryotes. In Arabidopsis thaliana, eight metal P-type ATPases have been described, four being specific to copper transport and four displaying a broader metal specificity, including zinc, cadmium, and possibly copper and calcium. So far, few efforts have been devoted to elucidating the origin and evolution of these proteins in Eukaryotes. In this work, we use large-scale phylogenetics to show that metal P-type ATPases form a homogenous group among P-type ATPases and that their specialization into either monovalent (Cu) or divalent (Zn, Cd…) metal transport stems from a gene duplication that took place early in the evolution of Life. Then, we demonstrate that the four subgroups of plant metal ATPases all have a different evolutionary origin and a specific taxonomic distribution, only one tracing back to the cyanobacterial progenitor of the chloroplast. Finally, we examine the subsequent evolution of these proteins in green plants and conclude that the genes thoroughly characterized in model organisms are often the result of lineage-specific gene duplications, which calls for caution when attempting to infer function from sequence similarity alone in non-model organisms. PMID:24575101

  9. A structural and functional perspective of DyP-type peroxidase family.

    PubMed

    Yoshida, Toru; Sugano, Yasushi

    2015-05-15

    Dye-decolorizing peroxidase from the basidiomycete Bjerkandera adusta Dec 1 (DyP) is a heme peroxidase. This name reflects its ability to degrade several anthraquinone dyes. The substrate specificity, the amino acid sequence, and the tertiary structure of DyP are different from those of the other heme peroxidase (super)families. Therefore, many proteins showing the similar amino acid sequences to that of DyP are called DyP-type peroxidase which is a new family of heme peroxidase identified in 2007. In fact, all structures of this family show a similar structure fold. However, this family includes many proteins whose amino acid sequence identity to DyP is lower than 15% and/or whose catalytic efficiency (kcat/Km) is a few orders of magnitude less than that of DyP. A protein showing an activity different from peroxidase activity (dechelatase activity) has been also reported. In addition, the precise physiological roles of DyP-type peroxidases are unknown. These facts raise a question of whether calling this family DyP-type peroxidase is suitable. Here, we review the differences and similarities of structure and function among this family and propose the reasonable new classification of DyP-type peroxidase family, that is, class P, I and V. In this contribution, we discuss the adequacy of this family name.

  10. Semiconductor liquid junction photocell having a p-type photoactive electrode

    SciTech Connect

    Heller, A.; Lewerenz, H.J.; Miller, B.

    1982-08-10

    A semiconductor liquid junction photocell has a photovoltaic junction between a p-type photoactive electrode comprising InP or Si and an electrolyte comprising a redox couple selected from the group consisting of V2+/V3+, Nb4+/Nb5+, and Ti3+/Ti4+ produces a stable photocurrent output.

  11. Fabrication and electrical characterization of Al/DNA-CTMA/ p-type a-Si:H photodiode based on DNA-CTMA biomaterial

    NASA Astrophysics Data System (ADS)

    Siva Pratap Reddy, M.; Puneetha, Peddathimula; Lee, Young-Woong; Jeong, Seong-Hoon; Park, Chinho

    2017-01-01

    In this work, a deoxyribonucleic acid-cetyltrimethylammonium chloride (DNA-CTMA) biomaterial based p-type hydrogenated amorphous silicon ( a-Si:H) photodiode (PD) is fabricated and its electrical characteristics are investigated. The Al/DNA-CTMA/ p-type a-Si:H PD parameters are studied using current-voltage ( I-V), capacitancevoltage-frequency ( C-V-f) and conductance-voltage-frequency ( G/ω-V-f) measurements. The barrier height and the ideality factor of the diode are found to be 0.78 eV and 1.9, respectively. The electrical and photoconductivity properties of the diode are analyzed by using dark I-V and transient photocurrent techniques. The C-V-f and G/ω-V-f measurements indicate that the capacitance and conductance of the diode depend on the voltage and frequency, respectively. The experimental results reveal that the decreases in capacitance and the increases in conductance with an increase in frequency can be explained on the basis of interface states ( N SS ). Series resistance ( R S ) measurements are performed on the diode and discussed here. The obtained electrical parameters confirm that the Al/DNA-CTMA/ p-type a-Si:H PD can be used as an optical sensor for the development of commercial applications that are environmentally benign. [Figure not available: see fulltext.

  12. HGMS: Glasses and Nanocomposites for Hydrogen Storage.

    SciTech Connect

    Lipinska, Kris; Hemmers, Oliver

    2013-02-17

    The primary goal of this project is to fabricate and investigate different glass systems and glass-derived nanocrystalline composite materials. These glass-based, two-phased materials will contain nanocrystals that can attract hydrogen and be of potential interest as hydrogen storage media. The glass materials with intrinsic void spaces that are able to precipitate functional nanocrystals capable to attract hydrogen are of particular interest. Proposed previously, but never practically implemented, one of promising concepts for storing hydrogen are micro-containers built of glass and shaped into hollow microspheres. The project expanded this concept to the exploration of glass-derived nanocrystalline composites as potential hydrogen storage media. It is known that the most desirable materials for hydrogen storage do not interact chemically with hydrogen and possess a high surface area to host substantial amounts of hydrogen. Glasses are built of disordered networks with ample void spaces that make them permeable to hydrogen even at room temperature. Glass-derived nanocrystalline composites (two-phased materials), combination of glasses (networks with ample voids) and functional nanocrystals (capable to attract hydrogen), appear to be promising candidates for hydrogen storage media. Key advantages of glass materials include simplicity of preparation, flexibility of composition, chemical durability, non-toxicity and mechanical strength, as well as low production costs and environmental friendliness. This project encompasses a fundamental research into physics and chemistry of glasses and nanocrystalline composite materials, derived from glass. Studies are aimed to answer questions essential for considering glass-based materials and composites as potential hydrogen storage media. Of particular interest are two-phased materials that combine glasses with intrinsic voids spaces for physisorption of hydrogen and nanocrystals capable of chemisorption. This project does not

  13. Nanocrystalline Zeolite Y: Synthesis and Characterization

    NASA Astrophysics Data System (ADS)

    Taufiqurrahmi, Niken; Rahman Mohamed, Abdul; Bhatia, Subhash

    2011-02-01

    Nanocrystalline zeolite has received significant attention in the catalysis community. Zeolites with a crystal size smaller than 100 nm are the potential replacement for existing zeolite catalysts due to its unique features with added advantages. Zeolite FAU type Y is one of the most studied framework of all zeolites, and has been used as catalysts for number of reactions in the refinery and petrochemical industry. The present paper covers the synthesis of nanocrystalline zeolite Y under hydrothermal conditions from clear synthesis mixtures. The crystal size of zeolite Y is influenced by temperature, aging time, alkalinity, and water content. The synthesized Y is characterized by X-ray diffraction (XRD), Fourier Transmission Infrared Sprectroscopy (FTIR), Transmission Electron Microscope (TEM), Scanning Electron Microscope (SEM) and Nitrogen Adsorption.

  14. Microemulsion-based synthesis of nanocrystalline materials.

    PubMed

    Ganguli, Ashok K; Ganguly, Aparna; Vaidya, Sonalika

    2010-02-01

    Microemulsion-based synthesis is found to be a versatile route to synthesize a variety of nanomaterials. The manipulation of various components involved in the formation of a microemulsion enables one to synthesize nanomaterials with varied size and shape. In this tutorial review several aspects of microemulsion based synthesis of nanocrystalline materials have been discussed which would be of interest to a cross-section of researchers working on colloids, physical chemistry, nanoscience and materials chemistry. The review focuses on the recent developments in the above area with current understanding on the various factors that control the structure and dynamics of microemulsions which can be effectively used to manipulate the size and shape of nanocrystalline materials.

  15. Solid nanocrystalline fullerite-containing carbon coatings

    NASA Astrophysics Data System (ADS)

    Oskomov, K. V.; Sochugov, N. S.; Solov'ev, A. A.; Rabotkin, S. V.

    2009-10-01

    Solid carbon coatings with a high content of nanocrystalline fullerite have been obtained using unbalanced magnetron sputtering of graphite under conditions of pulsed high-voltage ion bombardment of the film growing on a substrate. It is established that samples possessing the maximum hardness (18.8 GPa) are characterized by maximum values of the volume fraction of fullerite in the coating (50%), coherent scattering domain size (53 nm), degree of preferred grain orientation (85%), relative deformation of the lattice (1.02%), and internal compressive stresses (2.91 GPa). The observed behavior is consistent with the mechanism of strengthening that accounts for the phenomenon of superhardness in nanocrystalline and nanocomposite materials. This assumption is confirmed by the results of investigation of the morphology of growing coatings.

  16. Cathodoluminescence studies of nanocrystalline silicon films for field emission displays

    NASA Astrophysics Data System (ADS)

    Biaggi Labiosa, Azlin M.

    The cathodoluminescence (CL) emission from p-type porous silicon (PSi) films excited with low energy electron beams compatible with field emission display (FED) technologies was investigated. First, a study was carried out to find the optimal PSi configuration that would yield the strongest CL emission. It was found that the highest, stable CL intensities were obtained from samples prepared from p-type wafers with resistivity between 1-2 Ocm. Afterwards, the effects on the morphological details and the chemical composition due to the electron irradiation of the PSi films were studied. During a continuous irradiation of 10 hours the CL intensity of the films reduced in less than 10%. In situ SIMS analyses before and after prolonged e-beam excitation showed minor compositional changes of the film and reduced sputtering of the silicon nanoparticles due to the electron irradiation. It was also found that the electron bombardment causes microscale morphological modifications of the films, but the nanoscale features appear to be unchanged. The structural changes are manifested by the increase in the density of the nanoparticles which explains the significant enhancement of the photoluminescence (PL) that follows the electron irradiation. Second, after a thorough characterization of the PSi films under electron irradiation, tuning of the CL emission of PSi films was investigated. The PSi films used for this experiment were non-oxidized films unlike the ones used for the CL characterization that were oxidized films. The tuning was achieved by controlling the average size of the nanostructure thus showing that the origin of this CL emission is associated with the quantum confinement and the surface chemistry effects that are known to exist in the porous silicon system. However, the CL emission obtained from these samples was unstable which is attributed to the breaking of Si--H bonds due to the electron irradiation. Dangling bonds are then formed on the surface and this in

  17. Hydrogen production

    NASA Technical Reports Server (NTRS)

    England, C.; Chirivella, J. E.; Fujita, T.; Jeffe, R. E.; Lawson, D.; Manvi, R.

    1975-01-01

    The state of hydrogen production technology is evaluated. Specific areas discussed include: hydrogen production fossil fuels; coal gasification processes; electrolysis of water; thermochemical production of hydrogen; production of hydrogen by solar energy; and biological production of hydrogen. Supply options are considered along with costs of hydrogen production.

  18. The Form Effects of Magnetoresistivity in p-TYPE Diamond Films

    NASA Astrophysics Data System (ADS)

    Kong, Chun-Yang; Xu, Jie; Cui, Yu-Ting; Wang, Wan; Qing, Guo-Ping; Lan, Mao-Ping; Ruan, Hai-Bo

    The geometric form effects of magnetoresistivity (MR) from chemical vapor deposited p-type diamond films were investigated. The MR patterns (width/length ratio = 1, 2, 3, 4, 5, 6) were produced on p-type diamond films by photolithography and ion etching in oxygen plasma. The experimental results showed that the MR in diamond films with the strip structure changed with width-length ratio at magnetic field intensity of 3 T. The changes of MR strongly depended on the geometric form of the samples. With the width-length ratio increasing from 1 to 6, the MR increases from 0.08 to 1.0. It was almost changing linearly with the increase of width-to-length ratio. The geometric form effect is closely related to the Hall effect. A calculation formula of form effect of MR was presented.

  19. Measurement of the dead layer thickness in a p-type point contact germanium detector

    NASA Astrophysics Data System (ADS)

    Jiang, Hao; Yue, Qian; Li, Yu-Lan; Kang, Ke-Jun; Li, Yuan-Jing; Li, Jin; Lin, Shin-Ted; Liu, Shu-Kui; Ma, Hao; Ma, Jing-Lu; Su, Jian; Tsz-King Wong, Henry; Yang, Li-Tao; Zhao, Wei; Zeng, Zhi

    2016-09-01

    A 994 g mass p-type PCGe detector has been deployed during the first phase of the China Dark matter EXperiment, aiming at direct searches for light weakly interacting massive particles. Measuring the thickness of the dead layer of a p-type germanium detector is an issue of major importance since it determines the fiducial mass of the detector. This work reports a method using an uncollimated 133Ba source to determine the dead layer thickness. The experimental design, data analysis and Monte Carlo simulation processes, as well as the statistical and systematic uncertainties are described. A dead layer thickness of 1.02 mm was obtained based on a comparison between the experimental data and the simulated results. Supported by National Natural Science Foundation of China (10935005, 10945002, 11275107, 11175099)

  20. Ultra-thin ohmic contacts for p-type nitride light emitting devices

    DOEpatents

    Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

    2014-06-24

    A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

  1. Temperature driven p-n-p type conduction switching materials: current trends and future directions.

    PubMed

    Guin, Satya N; Biswas, Kanishka

    2015-04-28

    Modern technological inventions have been going through a "renaissance" period. Development of new materials and understanding of fundamental structure-property correlations are the important steps to move further for advanced technologies. In modern technologies, inorganic semiconductors are the leading materials which are extensively used for different applications. In the current perspective, we present discussion on an important class of materials that show fascinating p-n-p type conduction switching, which can have potential applications in diodes or transistor devices that operate reversibly upon temperature or voltage change. We highlight the key concepts, present the current fundamental understanding and show the latest developments in the field of p-n-p type conduction switching. Finally, we point out the major challenges and opportunities in this field.

  2. p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties

    SciTech Connect

    Wang, Ming-Zheng; Xie, Wei-Jie; Hu, Han; Yu, Yong-Qiang; Wu, Chun-Yan; Wang, Li; Luo, Lin-Bao

    2013-11-18

    Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm{sup 2}V{sup −1}s{sup −1} and a hole concentration of 1.67 × 10{sup 17} cm{sup −3}, respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application.

  3. CALCULATING THE HABITABLE ZONE OF BINARY STAR SYSTEMS. II. P-TYPE BINARIES

    SciTech Connect

    Haghighipour, Nader; Kaltenegger, Lisa

    2013-11-10

    We have developed a comprehensive methodology for calculating the circumbinary habitable zone (HZ) in planet-hosting P-type binary star systems. We present a general formalism for determining the contribution of each star of the binary to the total flux received at the top of the atmosphere of an Earth-like planet and use the Sun's HZ to calculate the inner and outer boundaries of the HZ around a binary star system. We apply our calculations to the Kepler's currently known circumbinary planetary systems and show the combined stellar flux that determines the boundaries of their HZs. We also show that the HZ in P-type systems is dynamic and, depending on the luminosity of the binary stars, their spectral types, and the binary eccentricity, its boundaries vary as the stars of the binary undergo their orbital motion. We present the details of our calculations and discuss the implications of the results.

  4. Perspectives of High-Temperature Thermoelectric Applications and p-type and n-type Aluminoborides

    NASA Astrophysics Data System (ADS)

    Mori, T.

    2016-10-01

    A need exists to develop high-temperature thermoelectric materials which can utilize high-temperature unutilized/waste heat in thermal power plants, steelworks, factories, incinerators, etc., and also focused solar power. The thermal power plant topping application is of potential high impact since it can sizably increase the efficiency of power plants which are the major supply of electrical power for many countries. Higher borides are possible candidates for their particular high-temperature stability, generally large Seebeck coefficients, α, and intrinsic low thermal conductivity. Excellent (|α| > 200 μV/K) p-type or n-type behavior was recently achieved in the aluminoboride YAl x B14 by varying the occupancy of Al sites, x. Finding p-type and n-type counterparts has long been a difficulty of thermoelectric research not limited to borides. This paper reviews possible high-temperature thermoelectric applications, and recent developments and perspectives of thermoelectric aluminoborides.

  5. P-type conductive amorphous oxides of transition metals from solution processing

    NASA Astrophysics Data System (ADS)

    Li, Jinwang; Kaneda, Toshihiko; Tokumitsu, Eisuke; Koyano, Mikio; Mitani, Tadaoki; Shimoda, Tatsuya

    2012-07-01

    We report a series of solution-processed p-type conductive amorphous Ln-M-O (a-Ln-M-O, where M = Ru, Ir, and Ln is a lanthanide element except Ce) having low resistivities (10-3 to 10-2 Ω cm). These oxides are thermally stable to a high degree, being amorphous up to 800 °C, and processable below 400 °C. Their film surfaces are smooth on the atomic scale, and the process allows patterning simply by direct imprinting without distortion of the pattern after annealing. These properties have high potential for use in printed electronics. The electron configurations of these oxides are apparently different from existing p-type oxides.

  6. Ferromagnetism in p-Type Manganese-Doped Zinc Oxide Quantum Dots.

    PubMed

    May, Joseph W; McMorris, Ryan J; Li, Xiaosong

    2012-05-17

    The magnetic exchange interactions between paramagnetic Mn(2+) dopants in the presence of a N(2-) p-type defect in zinc oxide quantum dots are studied using density functional theory. Spin-dependent delocalization of the N(2-) 2p acceptor level among the nearest-neighbor Mn(2+) dopants is observed. The calculations show that parallel Mn(2+) spin alignment is favored upon the formation of a nitrogen-bridged Mn-Mn dimer. Although the effect is short-ranged, the observed magnitude of stabilization of the ferromagnetic alignment of nearest-neighbor Mn(2+) spins arises from p-d exchange and suggests p-type Mn(2+)-doped ZnO quantum dots as excellent candidates for exhibiting room-temperature ferromagnetism. Analytical expressions are derived and supported by density functional theory calculations that show that the N(2-) concentration has a stronger influence on the magnetic splitting compared with that of the Mn(2+) concentration.

  7. Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors

    SciTech Connect

    Lyons, J. L.; Janotti, A.; Van de Walle, C. G.

    2014-01-07

    We examine how hole localization limits the effectiveness of substitutional acceptors in oxide and nitride semiconductors and explain why p-type doping of these materials has proven so difficult. Using hybrid density functional calculations, we find that anion-site substitutional impurities in AlN, GaN, InN, and ZnO lead to atomic-like states that localize on the impurity atom itself. Substitution with cation-site impurities, on the other hand, triggers the formation of polarons that become trapped on nearest-neighbor anions, generally leading to large ionization energies for these acceptors. Unlike shallow effective-mass acceptors, these two types of deep acceptors couple strongly with the lattice, significantly affecting the optical properties and severely limiting prospects for achieving p-type conductivity in these wide-band-gap materials.

  8. Infrared absorption and visible transparency in heavily doped p-type BaSnO3

    NASA Astrophysics Data System (ADS)

    Li, Yuwei; Sun, Jifeng; Singh, David J.

    2017-01-01

    The recent experimental work shows that perovskite BaSnO3 can be heavily doped by K to become a stable p-type semiconductor. Here, we find that p-type perovskite BaSnO3 retains transparency for visible light while absorbing strongly in the infrared below 1.5 eV. The origin of the remarkable optical transparency even with heavy doping is that the interband transitions that are enabled by empty states at the top of the valence band are concentrated mainly in the energy range from 0.5 to 1.5 eV, i.e., not extending past the near IR. In contrast to n-type, the Burstein-Moss shift is slightly negative, but very small reflecting the heavier valence bands relative to the conduction bands.

  9. An integrated driving circuit implemented with p-type LTPS TFTs for AMOLED

    NASA Astrophysics Data System (ADS)

    Zhao, Li-Qing; Wu, Chun-Ya; Hao, Da-Shou; Yao, Ying; Meng, Zhi-Guo; Xiong, Shao-Zhen

    2009-03-01

    Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED panel with self-scanned driving circuit is introduced in this paper. A shift register formed with novel p-type TFTs is proposed to realize the gate driver. A flip-latch cooperated with the shift register is designed to conduct the data writing. In order to verify the validity of the proposed design, the circuits are simulated with SILVACO TCAD tools, using the MODEL in which the parameters of LTPS TFTs were extracted from the LTPS TFTs made in our lab. The simulation results indicate that the circuit can fulfill the driving function.

  10. Preparation and Instability of Nanocrystalline Cuprous Nitride.

    PubMed

    Reichert, Malinda D; White, Miles A; Thompson, Michelle J; Miller, Gordon J; Vela, Javier

    2015-07-06

    Low-dimensional cuprous nitride (Cu3N) was synthesized by nitridation (ammonolysis) of cuprous oxide (Cu2O) nanocrystals using either ammonia (NH3) or urea (H2NCONH2) as the nitrogen source. The resulting nanocrystalline Cu3N spontaneously decomposes to nanocrystalline CuO in the presence of both water and oxygen from air at room temperature. Ammonia was produced in 60% chemical yield during Cu3N decomposition, as measured using the colorimetric indophenol method. Because Cu3N decomposition requires H2O and produces substoichiometric amounts of NH3, we conclude that this reaction proceeds through a complex stoichiometry that involves the concomitant release of both N2 and NH3. This is a thermodynamically unfavorable outcome, strongly indicating that H2O (and thus NH3 production) facilitate the kinetics of the reaction by lowering the energy barrier for Cu3N decomposition. The three different Cu2O, Cu3N, and CuO nanocrystalline phases were characterized by a combination of optical absorption, powder X-ray diffraction, transmission electron microscopy, and electronic density of states obtained from electronic structure calculations on the bulk solids. The relative ease of interconversion between these interesting and inexpensive materials bears possible implications for catalytic and optoelectronic applications.

  11. Method for producing high carrier concentration p-Type transparent conducting oxides

    DOEpatents

    Li, Xiaonan; Yan, Yanfa; Coutts, Timothy J.; Gessert, Timothy A.; Dehart, Clay M.

    2009-04-14

    A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

  12. Investigation of negative photoconductivity in p-type Pb1-xSnxTe film

    NASA Astrophysics Data System (ADS)

    Tavares, M. A. B.; da Silva, M. J.; Peres, M. L.; de Castro, S.; Soares, D. A. W.; Okazaki, A. K.; Fornari, C. I.; Rappl, P. H. O.; Abramof, E.

    2017-01-01

    We investigated the negative photoconductivity (NPC) effect that was observed in a p-type Pb1-xSnxTe film for temperatures varying from 300 K down to 85 K. We found that this effect is a consequence of defect states located in the bandgap which act as trapping levels, changing the relation between generation and recombination rates. Theoretical calculations predict contributions to the NPC from both conduction and valence bands, which are in accordance with the experimental observations.

  13. Low-temperature solution-processed p-type vanadium oxide for perovskite solar cells.

    PubMed

    Sun, Haocheng; Hou, Xiaomeng; Wei, Qiulong; Liu, Huawei; Yang, Kecheng; Wang, Wei; An, Qinyou; Rong, Yaoguang

    2016-06-21

    A low-temperature solution-processed inorganic p-type contact material of vanadium oxide (VOx) was developed to fabricate planar-heterojunction perovskite solar cells. Using a solvent-assisted process, high-quality uniform and compact perovskite (CH3NH3PbI3) films were deposited on VOx coated substrates. Due to the high transmittance and quenching efficiency of VOx layers, a power conversion efficiency of over 14% was achieved.

  14. Guided Growth of Horizontal p-Type ZnTe Nanowires

    PubMed Central

    2016-01-01

    A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor–liquid–solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means. PMID:27885331

  15. Efficient synthesis of triarylamine-based dyes for p-type dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Wild, Martin; Griebel, Jan; Hajduk, Anna; Friedrich, Dirk; Stark, Annegret; Abel, Bernd; Siefermann, Katrin R.

    2016-05-01

    The class of triarylamine-based dyes has proven great potential as efficient light absorbers in inverse (p-type) dye sensitized solar cells (DSSCs). However, detailed investigation and further improvement of p-type DSSCs is strongly hindered by the fact that available synthesis routes of triarylamine-based dyes are inefficient and particularly demanding with regard to time and costs. Here, we report on an efficient synthesis strategy for triarylamine-based dyes for p-type DSSCs. A protocol for the synthesis of the dye-precursor (4-(bis(4-bromophenyl)amino)benzoic acid) is presented along with its X-ray crystal structure. The dye precursor is obtained from the commercially available 4(diphenylamino)benzaldehyde in a yield of 87% and serves as a starting point for the synthesis of various triarylamine-based dyes. Starting from the precursor we further describe a synthesis protocol for the dye 4-{bis[4‧-(2,2-dicyanovinyl)-[1,1‧-biphenyl]-4-yl]amino}benzoic acid (also known as dye P4) in a yield of 74%. All synthesis steps are characterized by high yields and high purities without the need for laborious purification steps and thus fulfill essential requirements for scale-up.

  16. Efficient synthesis of triarylamine-based dyes for p-type dye-sensitized solar cells

    PubMed Central

    Wild, Martin; Griebel, Jan; Hajduk, Anna; Friedrich, Dirk; Stark, Annegret; Abel, Bernd; Siefermann, Katrin R.

    2016-01-01

    The class of triarylamine-based dyes has proven great potential as efficient light absorbers in inverse (p-type) dye sensitized solar cells (DSSCs). However, detailed investigation and further improvement of p-type DSSCs is strongly hindered by the fact that available synthesis routes of triarylamine-based dyes are inefficient and particularly demanding with regard to time and costs. Here, we report on an efficient synthesis strategy for triarylamine-based dyes for p-type DSSCs. A protocol for the synthesis of the dye-precursor (4-(bis(4-bromophenyl)amino)benzoic acid) is presented along with its X-ray crystal structure. The dye precursor is obtained from the commercially available 4(diphenylamino)benzaldehyde in a yield of 87% and serves as a starting point for the synthesis of various triarylamine-based dyes. Starting from the precursor we further describe a synthesis protocol for the dye 4-{bis[4′-(2,2-dicyanovinyl)-[1,1′-biphenyl]-4-yl]amino}benzoic acid (also known as dye P4) in a yield of 74%. All synthesis steps are characterized by high yields and high purities without the need for laborious purification steps and thus fulfill essential requirements for scale-up. PMID:27196877

  17. Electronic inhomogeneity in n- and p-type PbTe detected by 125Te NMR

    NASA Astrophysics Data System (ADS)

    Levin, E. M.; Heremans, J. P.; Kanatzidis, M. G.; Schmidt-Rohr, K.

    2013-09-01

    125Te nuclear magnetic resonance spectra and spin-lattice relaxation of n- and p-type PbTe, self-doping narrow band-gap semiconductors, have been studied and compared to those of p-type GeTe. Spin-lattice relaxation in GeTe can be fit by one component, while that in both PbTe samples must be fit by at least two components, showing electronically homogeneous and inhomogeneous materials, respectively. For PbTe-based materials, the spin-lattice relaxation rate 1/T1 increases linearly with carrier concentration. The data for GeTe fall on the same line and allow us to extend this plot to higher concentrations. Long and short T1 components in both PbTe samples reflect “low,” ˜1017 cm-3, and “high,” ˜1018 cm-3, carrier concentration components. Carrier concentrations in both n- and p-type PbTe samples obtained from the Hall and Seebeck effects generally match the “high” carrier concentration component, and to some extent, ignore the “low” one. This demonstrates that the Hall and Seebeck effects may have a limited ability for the determination of carrier concentration in complex thermoelectric PbTe-based and other multicomponent materials.

  18. Doping CoSb3 p-type with Al substitution for Sb

    NASA Astrophysics Data System (ADS)

    Adams, Michael J.; Nielsen, Michele D.; Heremans, Joseph P.

    2014-03-01

    Skutterudites such as CoSb3 are compounds composed of group IX-B atoms (Co, Rh, and Ir) forming a simple cubic structure, and group V-A3 pnictide atoms (primarily Sb and As) forming rings inside 6 of every 8 cubes. The remaining cubes remain empty. A common method for reducing thermal conductivity is to introduce impurity atoms such as rare-earths in the cubes that act as rattlers. P-type doping of CoSb3 has led to some advances in zT, but the p-type material remains less performing than the n-type material due to the fact that the valence band, dominated by Sb levels, has a low effective mass. A promising method for improving p-type properties is to introduce an effective resonant level into the energy levels occupied by the light hole band, thereby increasing the Seebeck coefficient without strongly effecting other transport properties. A first attempt using Sn substitution was not successful. Here we try various concentrations of Al substituted at Sb sites to generate a resonant level. Material properties are measured and compared with a calculated Pisarenko relation, where thermopower is plotted as a function of hole concentration. Financial support for this investigation was provided by the U.S. Department of Energy (DOE)-U.S.-China Clean Energy Research Center (CERC-CVC) under the award No. DE-PI0000012.

  19. Effect of N2 flow during deposition on p-type ZnO film

    NASA Astrophysics Data System (ADS)

    Lin, Chiung-Wei; Liu, Bor-Chang

    2017-01-01

    In this study, the influence of a nitrogen source on p-type conductive ZnO films was studied. Rapid thermal oxidation was conducted to oxidize ZnN films and convert them to ZnO films. When an as-deposited ZnN film was prepared at a high nitrogen gas flow rate, the converted ZnO film possessed many acceptors and showed stable p-type conduction. This p-type conduction was attributed to the nitrogen gas flow providing many “No” states, which act as acceptors within the processed ZnO film. It was found that the as-deposited ZnN film prepared at a high nitrogen gas flow rate is oxidized slightly so that only a few nitrogen atoms were replaced by oxygen. The carrier concentration and mobility of the optimized oxidized ZnN film were 9.76 × 1017 cm-3 and 62.78 cm2 V-1 s-1, respectively. A good rectified current-voltage characteristic with a turn-on voltage of 3.65 V was achieved for the optimized ZnO:N/ZnO junction.

  20. Demethoxycurcumin Is A Potent Inhibitor of P-Type ATPases from Diverse Kingdoms of Life

    PubMed Central

    Dao, Trong Tuan; Sehgal, Pankaj; Tung, Truong Thanh; Møller, Jesper Vuust; Nielsen, John; Palmgren, Michael; Christensen, Søren Brøgger

    2016-01-01

    P-type ATPases catalyze the active transport of cations and phospholipids across biological membranes. Members of this large family are involved in a range of fundamental cellular processes. To date, a substantial number of P-type ATPase inhibitors have been characterized, some of which are used as drugs. In this work a library of natural compounds was screened and we first identified curcuminoids as plasma membrane H+-ATPases inhibitors in plant and fungal cells. We also found that some of the commercial curcumins contain several curcuminoids. Three of these were purified and, among the curcuminoids, demethoxycurcumin was the most potent inhibitor of all tested P-type ATPases from fungal (Pma1p; H+-ATPase), plant (AHA2; H+-ATPase) and animal (SERCA; Ca2+-ATPase) cells. All three curcuminoids acted as non-competitive antagonist to ATP and hence may bind to a highly conserved allosteric site of these pumps. Future research on biological effects of commercial preparations of curcumin should consider the heterogeneity of the material. PMID:27644036

  1. Control of crystalline volume and nano crystal grain size in nanocrystalline silicon thin film deposited by PECVD

    NASA Astrophysics Data System (ADS)

    Bui, Thanh Tung; Chien Dang, Mau

    2014-11-01

    Application of the radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique was studied to fabricate amorphous and nanocrystalline silicon (a-Si and nc-Si) thin films for photovoltaic devices at substrate temperature of 200 °C. Amorphous-crystalline transition of silicon thin films in working conditions of PECVD system was shown as a function of deposition parameters, i.e., dilution ratio of silane (SiH4) in hydrogen, total gas pressure during deposition and RF excitation power density. The crystalline volume as well as grain size of nanocrystalline silicon films could be successfully controlled by tuning those deposition parameters. Micro Raman scattering spectroscopy and spectroscopic ellipsometry (SE) methods were used to characterize the structure and crystallization of the deposited silicon thin films. We could make nc-Si thin films with various crystalline volumes. Nc-Si grain size was also controlled and was in the range of 3-5 nm.

  2. Fabrication and characterization of nano-crystalline diamond films

    SciTech Connect

    Gruen, D.M.; Pan, X.; Krauss, A.R.; Liu, S.; Luo, J.; Foster, C.M.

    1993-11-01

    Highly uniform, smooth nano-crystalline diamond films have been fabricated with a magneto-active microwave CVD system. Top and bottom magnet currents were 145A and 60A, while microwave power and substrate temperature were controlled at 1500W and 850{degrees}C during deposition. Total processing pressure was regulated at 40 Pa (300 mTorr), with gas flow rates of 30 sccm of hydrogen, 2.4 sccm of methane and 1 sccm of oxygen. Diamond films obtained under the above conditions have grain sizes between 0.1--0.3 {mu}m, a growth rate of 0.1{mu}m/hr and a mean roughness of 14.95 nm. Characterization techniques have involved XRD, Raman spectroscopy, SEM, AFM and TEM. Both X-ray and electron diffraction patterns show no evidence of non-diamond phases. Although a high density of twins and stacking faults were revealed by HREM, compact diamond grains and clean intergranular boundaries (no graphitic or amorphous phases) were observed.

  3. Hydrogen systems

    SciTech Connect

    Veziroglu, T.N.; Zhu, Y.; Bao, D.

    1985-01-01

    This book presents the papers given at a symposium on hydrogen fuels. Topics considered at the symposium included hydrogen from fossil fuels, electrolysis, photolytic hydrogen generation, thermochemical and photochemical methods of hydrogen production, catalysts, hydrogen biosynthesis, novel and hybrid methods of hydrogen production, storage and handling, metal hydrides and their characteristics, utilization, hydrogen fueled internal combustion engines, hydrogen gas turbines, hydrogen flow and heat transfer, fuel cells, synthetic hydrocarbon fuels, thermal energy transfer, hydrogen purification, research programs, economics, primary energy sources, environmental impacts, and safety.

  4. Microwave plasma assisted chemical vapor deposition of ultra-nanocrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Huang, Wen-Shin

    Microwave plasma assisted ultra-nanocrystalline diamond film deposition was investigated using hydrogen deficient, carbon containing argon plasma chemistries with MSU-developed microwave plasma reactors. Ultra-nanocrystalline diamond film deposition on mechanically scratched silicon wafers was experimentally explored over the following input variables: (1) pressure: 60--240Torr, (2) total gas flow rate: 101--642 sccm, (3) input microwave power 732--1518W, (4) substrate temperature: 500°C--770°C, (5) deposition time: 2--48 hours, and (6) N2 impurities 5--2500 ppm. H2 concentrations were less than 9%, while CH 4 concentration was 0.17--1.85%. It was desired to grow films uniformly over 3″ diameter substrates and to minimize the grain size. Large, uniform, intense, and greenish-white discharges were sustained in contact with three inch silicon substrates over a 60--240 Torr pressure regime. At a given operating pressure, film uniformity was controlled by adjusting substrate holder geometry, substrate position, input microwave power, gas chemistries, and total gas flow rates. Film ultra-nanocrystallinity and smoothness required high purity deposition conditions. Uniform ultra-nanocrystalline films were synthesized in low leak-rate system with crystal sizes ranging from 3--30 nm. Films with 11--50 nm RMS roughness and respective thickness values of 1--23 mum were synthesized over 3″ wafers under a wide range of different deposition conditions. Film RMS roughness 7 nm was synthesized with thickness of 430 nm. Film uniformities of almost 100% were achieved over three inch silicon wafers. UV Raman and XRD characterization results indicated the presence of diamond in the synthesized films. Optical Emission Spectroscopy measurements showed that the discharge gas temperature was in excess of 2000 K. The synthesized films are uniformly smooth and the as grown ultra-nanocrystalline diamond can be used for a high frequency SAW device substrate material. IR measurements

  5. Solid state consolidation nanocrystalline copper-tungsten using cold spray

    SciTech Connect

    Hall, Aaron Christopher; Sarobol, Pylin; Argibay, Nicolas; Clark, Blythe; Diantonio, Christopher

    2015-09-01

    It is well known that nanostructured metals can exhibit significantly improved properties compared to metals with conventional grain size. Unfortunately, nanocrystalline metals typically are not thermodynamically stable and exhibit rapid grain growth at moderate temperatures. This severely limits their processing and use, making them impractical for most engineering applications. Recent work has shown that a number of thermodynamically stable nanocrystalline metal alloys exist. These alloys have been prepared as powders using severe plastic deformation (e.g. ball milling) processes. Consolidation of these powders without compromise of their nanocrystalline microstructure is a critical step to enabling their use as engineering materials. We demonstrate solid-state consolidation of ball milled copper-tantalum nanocrystalline metal powder using cold spray. Unfortunately, the nanocrystalline copper-tantalum powder that was consolidated did not contain the thermodynamically stable copper-tantalum nanostructure. Nevertheless, this does this demonstrates a pathway to preparation of bulk thermodynamically stable nanocrystalline copper-tantalum. Furthermore, it demonstrates a pathway to additive manufacturing (3D printing) of nanocrystalline copper-tantalum. Additive manufacturing of thermodynamically stable nanocrystalline metals is attractive because it enables maximum flexibility and efficiency in the use of these unique materials.

  6. Quasi-perpetual discharge behaviour in p-type Ge-air batteries.

    PubMed

    Ocon, Joey D; Kim, Jin Won; Abrenica, Graniel Harne A; Lee, Jae Kwang; Lee, Jaeyoung

    2014-11-07

    Metal-air batteries continue to become attractive energy storage and conversion systems due to their high energy and power densities, safer chemistries, and economic viability. Semiconductor-air batteries - a term we first define here as metal-air batteries that use semiconductor anodes such as silicon (Si) and germanium (Ge) - have been introduced in recent years as new high-energy battery chemistries. In this paper, we describe the excellent doping-dependent discharge kinetics of p-type Ge anodes in a semiconductor-air cell employing a gelled KOH electrolyte. Owing to its Fermi level, n-type Ge is expected to have lower redox potential and better electronic conductivity, which could potentially lead to a higher operating voltage and better discharge kinetics. Nonetheless, discharge measurements demonstrated that this prediction is only valid at the low current regime and breaks down at the high current density region. The p-type Ge behaves extremely better at elevated currents, evident from the higher voltage, more power available, and larger practical energy density from a very long discharge time, possibly arising from the high overpotential for surface passivation. A primary semiconductor-air battery, powered by a flat p-type Ge as a multi-electron anode, exhibited an unprecedented full discharge capacity of 1302.5 mA h gGe(-1) (88% anode utilization efficiency), the highest among semiconductor-air cells, notably better than new metal-air cells with three-dimensional and nanostructured anodes, and at least two folds higher than commercial Zn-air and Al-air cells. We therefore suggest that this study be extended to doped-Si anodes, in order to pave the way for a deeper understanding on the discharge phenomena in alkaline metal-air conversion cells with semiconductor anodes for specific niche applications in the future.

  7. Semiconducting p-type MgNiO:Li epitaxial films fabricated by cosputtering method

    SciTech Connect

    Kwon, Yong Hun; Chun, Sung Hyun; Cho, Hyung Koun

    2013-07-15

    Li-doped ternary Mg{sub x}Ni{sub 1-x}O thin films were deposited on (0001) Al{sub 2}O{sub 3} substrates by a radio frequency (RF) magnetron cosputtering method with MgO and NiO:Li targets. The Mg mole fraction and Li content were relatively controlled by changing RF power for the MgO target over a range of 0-300 W, while the NiO:Li target was kept at 150 W. As a result, all films were epitaxially grown on (0001) Al{sub 2}O{sub 3} substrates with the relationship of [110]{sub NiO}||[1110]{sub Al2O3}, [112]{sub NiO}||[2110]{sub Al2O3} (in-plane), and [111]{sub NiO}||[0001]{sub Al2O3} (out-of-plane), and showed p-type semiconducting properties. Furthermore, from x-ray diffraction patterns, the authors found that MgO was effectively mixed with NiO:Li without structural deformation due to low lattice mismatch (0.8%) between NiO and MgO. However, the excess Li contents degraded the crystallinity of the MgNiO films. The band-gap of films was continuously shifted from 3.66 eV (339 nm) to 4.15 eV (299 nm) by the RF power of the MgO target. A visible transmittance of more than 80% was exhibited at RF powers higher than 200 W. Ultimately, the electrical resistivity of p-type MgNiO films was improved from 7.5 to 673.5 {Omega}cm, indicating that the Li-doped MgNiO films are good candidates for transparent p-type semiconductors.

  8. Does p-type ohmic contact exist in WSe2-metal interfaces?

    NASA Astrophysics Data System (ADS)

    Wang, Yangyang; Yang, Ruo Xi; Quhe, Ruge; Zhong, Hongxia; Cong, Linxiao; Ye, Meng; Ni, Zeyuan; Song, Zhigang; Yang, Jinbo; Shi, Junjie; Li, Ju; Lu, Jing

    2015-12-01

    Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for

  9. Direct Measurement of Electron Beam Induced Currents in p-type Silicon

    SciTech Connect

    Han, M.G.; Zhu, Y.; Sasaki, K.; Kato, T.; Fisher, C.A.J.; Hirayama, T.

    2010-08-01

    A new method for measuring electron beam induced currents (EBICs) in p-type silicon using a transmission electron microscope (TEM) with a high-precision tungsten probe is presented. Current-voltage (I-V) curves obtained under various electron-beam illumination conditions are found to depend strongly on the current density of the incoming electron beam and the relative distance of the beam from the point of probe contact, consistent with a buildup of excess electrons around the contact. This setup provides a new experimental approach for studying minority carrier transport in semiconductors on the nanometer scale.

  10. Infrared analysis of hole properties of Mg-doped p-type InN films

    SciTech Connect

    Fujiwara, Masayuki; Ishitani, Yoshihiro; Wang Xinqiang; Che, Song-Bek; Yoshikawa, Akihiko

    2008-12-08

    Mg-doped InN films grown by plasma-assisted molecular beam epitaxy were characterized by infrared reflectance. Signatures of p-type conductivity in the spectra were obtained in the same doping density range where the existence of net acceptors was found by electrolyte capacitance-voltage measurements. Numerical spectrum analysis, which takes into account the large broadening factor of the normal mode energies of longitudinal optical phonon-plasmon coupling yielded high hole densities in the range of (0.1-1.2)x10{sup 19} cm{sup -3} and optical mobilities in the range of 25-70 cm{sup 2}/V s.

  11. Elastic constants determined by nanoindentation for p-type thermoelectric half-Heusler

    SciTech Connect

    Gahlawat, S.; Wheeler, L.; White, K. W. E-mail: kwwhite@uh.edu; He, R.; Chen, S.; Ren, Z. F. E-mail: kwwhite@uh.edu

    2014-08-28

    This paper presents a study of the elastic properties of the p-type thermoelectric half-Heusler material, Hf{sub 0.44}Zr{sub 0.44}Ti{sub 0.12}CoSb{sub 0.8}Sn{sub 0.2}, using nanoindentation. Large grain-sized polycrystalline specimens were fabricated for these measurements, providing sufficient indentation targets within single grains. Electron Backscatter Diffraction methods indexed the target grains for the correlation needed for our elastic analysis of individual single crystals for this cubic thermoelectric material. Elastic properties, including the Zener ratio and the Poisson ratio, obtained from the elasticity tensor are also reported.

  12. n/p-Type changeable semiconductor TiO2 prepared from NTA

    NASA Astrophysics Data System (ADS)

    Li, Qiuye; Wang, Xiaodong; Jin, Zhensheng; Yang, Dagang; Zhang, Shunli; Guo, Xinyong; Yang, Jianjun; Zhang, Zhijun

    2007-10-01

    A novel kind of nano-sized TiO2 (anatase) was obtained by high-temperature (400-700°C) dehydration of nanotube titanic acid (H2Ti2O4(OH)2, NTA). The high-temperature (400-700°C) dehydrated nanotube titanic acids (HD-NTAs) with a unique defect structure exhibited a p-type semiconductor behavior under visible-light irradiation (λ≥420 nm, E photon=2.95 eV), whereas exhibited an n-type semiconductor behavior irradiated with UV light (λ=365 nm, E photon=3.40 eV).

  13. Spin-pump-induced spin transport in p-type Si at room temperature.

    PubMed

    Shikoh, Eiji; Ando, Kazuya; Kubo, Kazuki; Saitoh, Eiji; Shinjo, Teruya; Shiraishi, Masashi

    2013-03-22

    A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni(80)Fe(20) results in spin accumulation at the Ni(80)Fe(20)/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

  14. Spin-Pump-Induced Spin Transport in p-Type Si at Room Temperature

    NASA Astrophysics Data System (ADS)

    Shikoh, Eiji; Ando, Kazuya; Kubo, Kazuki; Saitoh, Eiji; Shinjo, Teruya; Shiraishi, Masashi

    2013-03-01

    A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

  15. Above bandgap luminescence of p-type GaAs epitaxial layers

    NASA Astrophysics Data System (ADS)

    Sapriel, J.; Chavignon, J.; Alexandre, F.; Azoulay, R.; Sermage, B.; Rao, K.; Voos, M.

    1991-08-01

    New photoluminescence bands are observed in p-type GaAs epitaxial layers at 300 and 80 K, above the bandgap. These bands are independent of the nature of the dopant (Zn, Be, C) and of the growth technique (MBE or MOCVD). Their intensities increase as a function of the p doping (1 × 10 17 < p < 2 × 10 20cm-3) and peak at energies which correspond to transitions between the Γ 6, L 6 and X 6 minima of the conduction band and the Γ 8 and Γ 7 maxima of the valence band.

  16. Method of mitigating titanium impurities effects in p-type silicon material for solar cells

    NASA Technical Reports Server (NTRS)

    Salama, A. M. (Inventor)

    1980-01-01

    Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.

  17. p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

    DOEpatents

    Irwin, Michael D; Buchholz, Donald B; Marks, Tobin J; Chang, Robert P. H.

    2014-11-25

    The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.

  18. p-Type Doping of GaN Nanowires Characterized by Photoelectrochemical Measurements.

    PubMed

    Kamimura, Jumpei; Bogdanoff, Peter; Ramsteiner, Manfred; Corfdir, Pierre; Feix, Felix; Geelhaar, Lutz; Riechert, Henning

    2017-03-08

    GaN nanowires (NWs) doped with Mg as a p-type impurity were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. In a systematic series of experiments, the amount of Mg supplied during NW growth was varied. The incorporation of Mg into the NWs was confirmed by the observation of donor-acceptor pairs and acceptor-bound excitons in low-temperature photoluminescence spectroscopy. Quantitative information about the Mg concentrations was deduced from Raman scattering by local vibrational modes related to Mg. In order to study the type and density of charge carriers present in the NWs, we employed two photoelectrochemical techniques, open-circuit potential and Mott-Schottky measurements. Both methods showed the expected transition from n-type to p-type conductivity with increasing Mg doping level, and the latter characterization technique allowed us to quantify the charge carrier concentration. Beyond the quantitative information obtained for Mg doping of GaN NWs, our systematic and comprehensive investigation demonstrates the benefit of photoelectrochemical methods for the analysis of doping in semiconductor NWs in general.

  19. Perovskite LaRhO3 as a p-type active layer in oxide photovoltaics

    NASA Astrophysics Data System (ADS)

    Nakamura, Masao; Krockenberger, Yoshiharu; Fujioka, Jun; Kawasaki, Masashi; Tokura, Yoshinori

    2015-02-01

    Perovskite-type transition-metal oxides have a wide variety of physical properties and triggered intensive research on functional devices in the form of heteroepitaxial junctions. However, there is a missing component that is a p-type conventional band semiconductor. LaRhO3 (LRO) is one of very few promising candidates having its bandgap between filled t2g and empty eg of Rh in low-spin state, but there has been no report on the synthesis of large-size single crystals or thin films. Here, we report on the junction properties of single-crystalline thin films of LRO grown on (110) oriented Nb-doped SrTiO3 substrates. The external quantum efficiency of the photo-electron conversion exceeds 1% in the visible-light region due to the wide depletion layer and long diffusion length of minority carriers in LRO. Clear indication of p-type band semiconducting character in a perovskite oxide of LRO will pave a way to explore oxide electronics of perovskite heterostructures.

  20. Fullerene C{sub 70} as a p-type donor in organic photovoltaic cells

    SciTech Connect

    Zhuang, Taojun; Wang, Xiao-Feng E-mail: zrhong@ucla.edu Sano, Takeshi; Kido, Junji E-mail: zrhong@ucla.edu; Hong, Ziruo E-mail: zrhong@ucla.edu; Li, Gang; Yang, Yang

    2014-09-01

    Fullerenes and their derivatives have been widely used as n-type materials in organic transistor and photovoltaic devices. Though it is believed that they shall be ambipolar in nature, there have been few direct experimental proofs for that. In this work, fullerene C{sub 70}, known as an efficient acceptor, has been employed as a p-type electron donor in conjunction with 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile as an electron acceptor in planar-heterojunction (PHJ) organic photovoltaic (OPV) cells. High fill factors (FFs) of more than 0.70 were reliably achieved with the C{sub 70} layer even up to 100 nm thick in PHJ cells, suggesting the superior potential of fullerene C{sub 70} as the p-type donor in comparison to other conventional donor materials. The optimal efficiency of these unconventional PHJ cells was 2.83% with a short-circuit current of 5.33 mA/cm{sup 2}, an open circuit voltage of 0.72 V, and a FF of 0.74. The results in this work unveil the potential of fullerene materials as donors in OPV devices, and provide alternative approaches towards future OPV applications.

  1. Easily doped p-type, low hole effective mass, transparent oxides

    NASA Astrophysics Data System (ADS)

    Sarmadian, Nasrin; Saniz, Rolando; Partoens, Bart; Lamoen, Dirk

    2016-02-01

    Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications – i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron rest mass, and good p-type dopability. Furthermore, for La2SeO2 it is explicitly shown that Na impurities substituting La are shallow acceptors in moderate to strong anion-rich growth conditions, with low formation energy, and that they will not be compensated by anion vacancies VO or VSe.

  2. Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

    NASA Technical Reports Server (NTRS)

    Beaty, John S.; Rolfe, Jonathon L.; Vandersande, Jan; Fleurial, Jean-Pierre

    1992-01-01

    Spark erosion was used to produce ultra-fine particles of SiGe thermoelectric material and boron nitride, an inert phonon-scattering material. A homogeneous powder was made by mixing the two powders. The mixture was hot pressed to produce a thermoelectric material with uniformity dispersed, ultra-fine, inert, phonon-scattering centers. It is shown that, in samples with inert boron nitride or silicon nitride, thermal conductivity of a SiGe alloy can be reduced by about 25 percent while maintaining the electrical properties of the samples. Annealing of all the samples at 1525 K caused grain growth to over a micron, eliminating the detrimental effect attributable to small grains. Only in the sample with boron nitride the thermal conductivity did remain well below that for standard p-type SiGe (about 25 percent), while the electrical resistivity and Seebeck coefficient were very close to the values for standard p-type 80/20 SiGe.

  3. Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes.

    PubMed

    Cao, Xuan; Cao, Yu; Zhou, Chongwu

    2016-01-26

    Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 μm. In addition, the resulted transistors show mobility up to 12.04 cm(2) V(-1) S(-1), high on-off ratio (∼10(6)), ultralight weight (<3 g/m(2)), and good mechanical robustness (accommodating severe crumpling and 67% compressive strain). Furthermore, the nanotube circuits can operate properly with 33% compressive strain. On the basis of the aforementioned features, our ultraflexible p-type nanotube transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics.

  4. EEG/MEG forward simulation through h- and p-type finite elements

    NASA Astrophysics Data System (ADS)

    Pursiainen, S.

    2008-07-01

    Electro/Magnetoencephalography (EEG/MEG) is a non-invasive imaging modality, in which a primary current density generated by the neural activity in the brain is to be reconstructed from external electric potential/magnetic field measurements. This work focuses on effective and accurate simulation of the EEG/MEG forward model through the h- and p-versions of the finite element method (h- and p-FEM). The goal is to compare the effectiveness of these two versions in forward simulation. Both h- and p-type forward simulations are described and implemented, and the technical solutions found are discussed. These include, for example, suitable ways to generate a finite element mesh for a real head geometry through the use of different element types. Performances of the two implemented forward simulation types are compared by measuring directly the forward modeling error, as well as by computing reconstructions through a regularized FOCUSS (FOCal Underdetermined System Solver) algorithm. The results obtained suggest that the p-type performs better in terms of the forward modeling error. However, both types perform well in regularized FOCUSS reconstruction.

  5. Valence Band Structure of Highly Efficient p-type Thermoelectric PbTe-PbS Alloys

    SciTech Connect

    Jaworski, C. M.; Nielsen, Mechele; Wang, Hsin; Girard, Steven N.; Cai, Wei; Porter, Wallace D; Kanatzidis, Mercouri G.; Heremans, J. P.

    2013-01-01

    New experimental evidence is given relevant to the temperature-dependence of valence band structure of PbTe and PbTe1-xSx alloys (0.04 x 0.12), and its effect on the thermoelectric figure of merit zT. The x = 0.08 sample has zT ~ 1.55 at 773K. The magnetic field dependence of the high-temperature Hall resistivity of heavily p-type (> 1019 cm-3) Na-doped PbTe1-xSx reveals the presence of high-mobility electrons. This put in question prior analyses of the Hall coefficient and the conclusion that PbTe would be an indirect gap semiconductor at temperatures where its zT is optimal. Possible origins for these electrons are discussed: they can be induced by photoconductivity, or by the topology of the Fermi surface when the L and -bands merge. Negative values for the low-temperature thermopower are also observed. Our data show that PbTe continues to be a direct gap semiconductor at temperatures where the zT and S2 of p-type PbTe are optimal e.g. 700-900K. The previously suggested temperature induced rapid rise in energy of the heavy hole LVB relative to the light hole UVB is not supported by the experimental data.

  6. Characterization of irradiated detectors fabricated on p-type silicon substrates for super-LHC

    NASA Astrophysics Data System (ADS)

    Miñano, M.; Campabadal, F.; Escobar, C.; García, C.; González, S.; Lacasta, C.; Lozano, M.; Martí i García, S.; Pellegrini, G.; Rafí, J. M.; Ullán, M.

    2007-12-01

    An upgrade of the large hadron collider (LHC), the Super-LHC (SLHC), towards higher luminosities is currently being discussed as an extension of the LHC physics program. The goal of the SLHC is to operate at a luminosity of 10 35 cm -2 s -1 (10 times larger than that of the LHC one). Thus, the operation of the SLHC implies a need to upgrade the detectors of the LHC experiments. The current tracking system of ATLAS will not cope with that luminosity. New solutions must be investigated to improve the radiation tolerance of the semiconductor detector. p-Type bulk sensors are being considered for the ATLAS tracking system for the SLHC. Microstrip detectors fabricated by CNM-IMB on p-type high-resistivity float zone silicon have been irradiated with neutrons at the TRIGA Mark II reactor in Ljubljana up to a fluence of 10 16 cm -2 (as expected in the innermost region of the ATLAS upgrade) and have been characterized at IFIC Laboratory. The collected charge, after irradiation, has been measured by infrared laser illumination. The leakage current of those sensors is also reported.

  7. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

    PubMed Central

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1−xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1−xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm−3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports. PMID:26777294

  8. Lateral photovoltaic effect in p-type silicon induced by surface states

    NASA Astrophysics Data System (ADS)

    Huang, Xu; Mei, Chunlian; Gan, Zhikai; Zhou, Peiqi; Wang, Hui

    2017-03-01

    A colossal lateral photovoltaic effect (LPE) was observed at the surface of p-type silicon, which differs from the conventional thought that a large LPE is only observed in Schottky junctions and PN junctions consisting of several layers with different conductivities. It shows a high sensitivity of 499.24 mV/mm and an ultra-broadband spectral responsivity (from 405 nm to 980 nm) at room temperature, which makes it an attractive candidate for near-infrared detection. We propose that this phenomenon can be understood by considering the surface band bending near the surface of p-Si induced by charged surface states. The energy band diagrams of the samples are shown based on X-ray photoelectron spectroscopy suggesting the correlation between the LPE and surface band bending. The conjectures are validated by changing the surface states of p-type silicon using Ni nano-films. These findings reveal a generation mechanism of the LPE and may lead to p-Si based, broadband-responsivity, low-cost, and high-precision optical and optoelectronic applications.

  9. Size-Dependent Elasticity of Nanocrystalline Titania

    SciTech Connect

    Chen, B.; Zhang, H; Dunphy-Guzman, K; Spagnoli, D; Kruger, M; Muthu, D; Kunz, M; Fakra, S; Hu, J; et. al.

    2009-01-01

    Synchrotron-based high-pressure x-ray diffraction measurements indicate that compressibility, a fundamental materials property, can have a size-specific minimum value. The bulk modulus of nanocrystalline titania has a maximum at particle size of 15 nm. This can be explained by dislocation behavior because very high dislocation contents can be achieved when shear stress induced within nanoparticles counters the repulsion between dislocations. As particle size decreases, compression increasingly generates dislocation networks (hardened by overlap of strain fields) that shield intervening regions from external pressure. However, when particles become too small to sustain high dislocation concentrations, elastic stiffening declines. The compressibility has a minimum at intermediate sizes.

  10. Dynamic consolidation of metastable nanocrystalline powders

    SciTech Connect

    Korth, G.E.; Williamson, R.L.

    1995-10-01

    Nanocrystalline metal powders synthesized by mechanical alloying in a ball mill resulted in micron-sized powder particles with a nanosized (5 to 25 nm) substructure. Conventional consolidation methods resulted in considerable coarsening of the metastable nanometer crystallites, but dynamic consolidation of these powders using explosive techniques produced fully dense monoliths while retaining the 5- to 25-nm substructure. Numerical modeling used to guide the experimental phase, revealed that the compression wave necessary for suitable consolidation was of order of 10 GPa for a few tenths of a microsecond. The consolidation process is described, and the retention of the metastable nanostructure is illustrated.

  11. The Neel temperatures of nanocrystalline chromium

    SciTech Connect

    Fitzsimmons, M.R.; Robinson, R.A.; Eastman, J.A.; Lynn, J.W.

    1994-07-01

    Wide-angle neutron diffraction measurements at temperatures from 6 to 250 K indicate that the major portion of a nanocrystalline chromium sample with a mean grain size of 73 nm becomes antiferromagnetically ordered at 119 {plus_minus} 10 K. The remainder of the sample has a Neel temperature above 250 K, as expected for coarse-grained chromium. No evidence for antiferromagnetic order in a second sample with a mean grain size of 11 nm was observed, even to temperatures as low as 6 K.

  12. Ultrasonic Emission from Nanocrystalline Porous Silicon

    NASA Astrophysics Data System (ADS)

    Shinoda, Hiroyuki; Koshida, Nobuyoshi

    A simple layer structure composed of a metal thin film and a porous silicon layer on a silicon substrate generates intense and wide-band airborne ultrasounds. The large-bandwidth and the fidelity of the sound reproduction are leveraged in applications varying from sound-based measurement to a scientific study of animal ecology. This chapter describes the basic principle of the ultrasound generation. The macroscopic properties of the low thermal conductivity and the small heat capacity of nanocrystalline porous silicon thermally induce ultrasonic emission. The state-of-the-art of the achievable sound pressure and sound signal properties is introduced, with the technological and scientific applications of the devices.

  13. Surface Modification of CoO(x) Loaded BiVO₄ Photoanodes with Ultrathin p-Type NiO Layers for Improved Solar Water Oxidation.

    PubMed

    Zhong, Miao; Hisatomi, Takashi; Kuang, Yongbo; Zhao, Jiao; Liu, Min; Iwase, Akihide; Jia, Qingxin; Nishiyama, Hiroshi; Minegishi, Tsutomu; Nakabayashi, Mamiko; Shibata, Naoya; Niishiro, Ryo; Katayama, Chisato; Shibano, Hidetaka; Katayama, Masao; Kudo, Akihiko; Yamada, Taro; Domen, Kazunari

    2015-04-22

    Photoelectrochemical (PEC) devices that use semiconductors to absorb solar light for water splitting offer a promising way toward the future scalable production of renewable hydrogen fuels. However, the charge recombination in the photoanode/electrolyte (solid/liquid) junction is a major energy loss and hampers the PEC performance from being efficient. Here, we show that this problem is addressed by the conformal deposition of an ultrathin p-type NiO layer on the photoanode to create a buried p/n junction as well as to reduce the charge recombination at the surface trapping states for the enlarged surface band bending. Further, the in situ formed hydroxyl-rich and hydroxyl-ion-permeable NiOOH enables the dual catalysts of CoO(x) and NiOOH for the improved water oxidation activity. Compared to the CoO(x) loaded BiVO4 (CoO(x)/BiVO4) photoanode, the ∼6 nm NiO deposited NiO/CoO(x)/BiVO4 photoanode triples the photocurrent density at 0.6 V(RHE) under AM 1.5G illumination and enables a 1.5% half-cell solar-to-hydrogen efficiency. Stoichiometric oxygen and hydrogen are generated with Faraday efficiency of unity over 12 h. This strategy could be applied to other narrow band gap semiconducting photoanodes toward the low-cost solar fuel generation devices.

  14. Inverse Design of p-Type Transparent Conducting Oxides for Energy Applications

    NASA Astrophysics Data System (ADS)

    Nagaraja, Arpun Ramaiah

    The Inverse Design approach to materials discovery was applied to developing materials that exhibit simultaneous p-type conductivity and optical transparency. Theoretical calculations predicted that Rh2ZnO4 and Cr2MnO4, well-known compounds with the spinel crystal structure, had the potential to be p-type transparent conducting oxides (p-TCOs). Bulk samples of these materials were synthesized, and their structural, optical, and electrical properties were characterized. Theory predicted that Rh2ZnO4 was largely a line compound, with slight deviations toward Zn-excess at higher temperatures. This off-stoichiometry was predicted to be the source of excess holes and thus p-type conductivity in Rh2ZnO4. Additionally, new methods in density functional theory predicted that hole conduction in Rh 2ZnO4 occurred via band transport, instead of small polaron hopping. In this work, experimental X-ray diffraction (XRD) studies confirmed that Rh2ZnO4 exhibits small off-stoichiometry toward Zn-rich compositions at 975°C. High temperature electrical measurements confirmed p-type conductivity, and room temperature Hall effect measurements yielded a hole mobility of 0.18 cm2/Vs for a bulk polycrystalline sample. In order to distinguish between band and polaron conduction, a revised analysis for high temperature electrical data was developed. This new analysis combines conductivity and thermopower data with theoretical calculations of the effective density of states in order to determine the behavior of the mobility with temperature. This method can be applied in the absence of a direct measurement of the temperature-dependence of the mobility. The results of this new method indicate that the behavior of Rh2ZnO4 is consistent with band conduction. Although intrinsic Cr2MnO4 is electrically insulating, lithium was predicted to be an effective p-type dopant, occupying the tetrahedral (Mn) site. Combined neutron/X-ray measurements of a doped specimen confirmed the predicted site

  15. Hydrogen sensor

    DOEpatents

    Duan, Yixiang; Jia, Quanxi; Cao, Wenqing

    2010-11-23

    A hydrogen sensor for detecting/quantitating hydrogen and hydrogen isotopes includes a sampling line and a microplasma generator that excites hydrogen from a gas sample and produces light emission from excited hydrogen. A power supply provides power to the microplasma generator, and a spectrometer generates an emission spectrum from the light emission. A programmable computer is adapted for determining whether or not the gas sample includes hydrogen, and for quantitating the amount of hydrogen and/or hydrogen isotopes are present in the gas sample.

  16. Microwave plasma chemical synthesis of nanocrystalline carbon film structures and study their properties

    NASA Astrophysics Data System (ADS)

    Bushuev, N.; Yafarov, R.; Timoshenkov, V.; Orlov, S.; Starykh, D.

    2015-08-01

    The self-organization effect of diamond nanocrystals in polymer-graphite and carbon films is detected. The carbon materials deposition was carried from ethanol vapors out at low pressure using a highly non-equilibrium microwave plasma. Deposition processes of carbon film structures (diamond, graphite, graphene) is defined. Deposition processes of nanocrystalline structures containing diamond and graphite phases in different volume ratios is identified. The solid film was obtained under different conditions of microwave plasma chemical synthesis. We investigated the electrical properties of the nanocrystalline carbon films and identified it's from various factors. Influence of diamond-graphite film deposition mode in non-equilibrium microwave plasma at low pressure on emission characteristics was established. This effect is justified using the cluster model of the structure of amorphous carbon. It was shown that the reduction of bound hydrogen in carbon structures leads to a decrease in the threshold electric field of emission from 20-30 V/m to 5 V/m. Reducing the operating voltage field emission can improve mechanical stability of the synthesized film diamond-graphite emitters. Current density emission at least 20 A/cm2 was obtained. Nanocrystalline carbon film materials can be used to create a variety of functional elements in micro- and nanoelectronics and photonics such as cold electron source for emission in vacuum devices, photonic devices, cathodoluminescent flat display, highly efficient white light sources. The obtained graphene carbon net structure (with a net size about 6 μm) may be used for the manufacture of large-area transparent electrode for solar cells and cathodoluminescent light sources

  17. The chemical and catalytic properties of nanocrystalline metal oxides prepared through modified sol-gel synthesis

    NASA Astrophysics Data System (ADS)

    Carnes, Corrie Leigh

    The goal of this research was to synthesize, characterize and study the chemical properties of nanocrystalline metal oxides. Nanocrystalline (NC) ZnO, CuO, NiO, Al2O3, and the binary Al2O 3/MgO and ZnO/CuO were prepared through modified sol gel methods. These NC metal oxides were studied in comparison to the commercial (CM) metal oxides. The samples were characterized by XRD, TGA, FTIR, BET, and TEM. The NC samples were all accompanied by a significant increase in surface area and decrease in crystallite size. Several chemical reactions were studied to compare the NC samples to the CM samples. One of the reactions involved a high temperature reaction between carbon tetrachloride and the oxide to form carbon dioxide and the corresponding metal chloride. A similar high temperature reaction was conducted between the metal oxide and hydrogen sulfide to form water and the corresponding metal sulfide. A room temperature gas phase adsorption was studied where SO2 was adsorbed onto the oxide. A liquid phase adsorption conducted at room temperature was the destructive adsorption of paraoxon (a toxic insecticide). In all reactions the NC samples exhibited greater activity, destroying or adsorbing a larger amount of the toxins compared to the CM samples. To better study surface area effects catalytic reactions were also studied. The catalysis of methanol was studied over the nanocrystalline ZnO, CuO, NiO, and ZnO/CuO samples in comparison to their commercial counterparts. In most cases the NC samples proved to be more active catalysts, having higher percent conversions and turnover numbers. A second catalytic reaction was also studied, this reaction was investigated to look at the support effects. The catalysis of cyclopropane to propane was studied over Pt and Co catalysts. These catalysts were supported onto NC and CM alumina by impregnation. By observing differences in the catalytic behavior, support effects have become apparent.

  18. Nanocrystalline cerium oxide materials for solid fuel cell systems

    DOEpatents

    Brinkman, Kyle S

    2015-05-05

    Disclosed are solid fuel cells, including solid oxide fuel cells and PEM fuel cells that include nanocrystalline cerium oxide materials as a component of the fuel cells. A solid oxide fuel cell can include nanocrystalline cerium oxide as a cathode component and microcrystalline cerium oxide as an electrolyte component, which can prevent mechanical failure and interdiffusion common in other fuel cells. A solid oxide fuel cell can also include nanocrystalline cerium oxide in the anode. A PEM fuel cell can include cerium oxide as a catalyst support in the cathode and optionally also in the anode.

  19. Achieving large uniform tensile ductility in nanocrystalline metals.

    PubMed

    Wang, Y M; Ott, R T; Hamza, A V; Besser, M F; Almer, J; Kramer, M J

    2010-11-19

    Synchrotron x-ray diffraction and high-resolution electron microscopy revealed the origin of different strain hardening behaviors (and dissimilar tensile ductility) in nanocrystalline Ni and nanocrystalline Co. Planar defect accumulations and texture evolution were observed in Co but not in Ni, suggesting that interfacial defects are an effective passage to promote strain hardening in truly nanograins. Twinning becomes less significant in Co when grain sizes reduce to below ~15 nm. This study offers insights into achieving excellent mechanical properties in nanocrystalline materials.

  20. Formation of Surface Corrosion-Resistant Nanocrystalline Structures on Steel.

    PubMed

    Nykyforchyn, Hryhoriy; Kyryliv, Volodymyr; Maksymiv, Olha; Slobodyan, Zvenomyra; Tsyrulnyk, Oleksandr

    2016-12-01

    Engineering materials with nanocrystalline structure could be exploited under simultaneous action of mechanical loading and corrosion environments; therefore, their corrosion resistance is important. Surface nanocrystalline structure was generated on middle carbon steels by severe plastic deformation using the method of mechanical pulse friction treatment. This treatment additionally includes high temperature phase transformation and alloying. Using a complex of the corrosive, electrochemical and physical investigations, it was established that nanocrystalline structures can be characterized by lower or increased corrosion resistance in comparison with the reference material. It is caused by the action of two confronting factors: arising energy level and anticorrosive alloying of the surface layer.

  1. Microstructure characterization and cation distribution of nanocrystalline cobalt ferrite

    NASA Astrophysics Data System (ADS)

    Abbas, Y. M.; Mansour, S. A.; Ibrahim, M. H.; Ali, Shehab E.

    2011-11-01

    Nanocrystalline cobalt ferrite has been synthesized using two different methods: ceramic and co-precipitation techniques. The nanocrystalline ferrite phase has been formed after 3 h of sintering at 1000 °C. The structural and microstructural evolutions of the nanophase have been studied using X-ray powder diffraction and the Rietveld method. The refinement result showed that the type of the cationic distribution over the tetrahedral and octahedral sites in the nanocrystalline lattice is partially an inverse spinel. The transmission electronic microscope analysis confirmed the X-ray results. The magnetic properties of the samples were characterized using a vibrating sample magnetometer.

  2. Hydrogenation apparatus

    DOEpatents

    Friedman, Joseph [Encino, CA; Oberg, Carl L [Canoga Park, CA; Russell, Larry H [Agoura, CA

    1981-01-01

    Hydrogenation reaction apparatus comprising a housing having walls which define a reaction zone and conduits for introducing streams of hydrogen and oxygen into the reaction zone, the oxygen being introduced into a central portion of the hydrogen stream to maintain a boundary layer of hydrogen along the walls of the reaction zone. A portion of the hydrogen and all of the oxygen react to produce a heated gas stream having a temperature within the range of from 1100.degree. to 1900.degree. C., while the boundary layer of hydrogen maintains the wall temperature at a substantially lower temperature. The heated gas stream is introduced into a hydrogenation reaction zone and provides the source of heat and hydrogen for a hydrogenation reaction. There also is provided means for quenching the products of the hydrogenation reaction. The present invention is particularly suitable for the hydrogenation of low-value solid carbonaceous materials to provide high yields of more valuable liquid and gaseous products.

  3. Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation

    NASA Astrophysics Data System (ADS)

    Defresne, A.; Plantevin, O.; Roca i Cabarrocas, Pere

    2016-12-01

    Heterojunction solar cells based on crystalline silicon (c-Si) passivated by hydrogenated amorphous silicon (a-Si:H) thin films are one of the most promising architectures for high energy conversion efficiency. Indeed, a-Si:H thin films can passivate both p-type and n-type wafers and can be deposited at low temperature (<200°C) using PECVD. However, such passivation layers, in particular p-type a-Si:H, show a dramatic degradation in passivation quality above 200°C. Yet, annealing at 300 - 400°C the TCO layer and metallic contacts is highly desirable to reduce the contact resistance as well as the TCO optical absorption. In this work, we show that as expected, ion implantation (5 - 30 keV) introduces defects at the c-Si/a-Si:H interface which strongly degrade the effective lifetime, down to a few micro-seconds. However, the passivation quality can be restored and lifetime values can be improved up to 2 ms over the initial value with annealing. We show here that effective lifetimes above 1 ms can be maintained up to 380°C, opening up the possibility for higher process temperatures in silicon heterojunction device fabrication.

  4. Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

    SciTech Connect

    Fan, J. C.; Zhu, C. Y.; Yang, B.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Wong, K. S.; Zhong, Y. C.; Xie, Z.; Ling, C. C.

    2011-05-15

    Arsenic doped ZnO and ZnMgO films were deposited on SiO{sub 2} using radio frequency magnetron sputtering and ZnO-Zn{sub 3}As{sub 2} and ZnO-Zn{sub 3}As{sub 2}-MgO targets, respectively. It was found that thermal activation is required to activate the formation of p-type conductivity. Hall measurements showed that p-type films with a hole concentration of {approx}10{sup 17} cm{sup -3} and mobility of {approx}8 cm{sup 2} V{sup -1} s{sup -1} were obtained at substrate temperatures of 400-500 deg. C The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As{sub Zn}-2V{sub Zn} shallow acceptor complex and removes the compensating hydrogen center.

  5. High-output-power densities from molecular beam epitaxy grown n- and p-type PbTeSe-based thermoelectrics via improved contact metallization

    NASA Astrophysics Data System (ADS)

    Goodhue, W. G.; Reeder, R. E.; Vineis, C. J.; Calawa, S. D.; Dauplaise, H. M.; Vangala, S.; Walsh, M. P.; Harman, T. C.

    2012-05-01

    Electrical power densities of up to 33 W/cm2 and up to 12 W/cm2 were obtained for n-type and p-type PbTeSe-based stand-alone thermoelectric devices, respectively, at modest temperature gradients of ˜200 °C (Tcold = 25 °C). These large power densities were enabled by greatly improving electrical contact resistivities in the thermoelectric devices. Electrical contacts with contact resistivities as low as 3.9 × 10-6 Ω cm2 and 4.0 × 10-6 Ω cm2 for n- and p-type telluride-based- materials, respectively, were developed by investigating several metallization schemes and contact layer doping/alloy combinations, in conjunction with a novel contact application process. This process exposes heated semiconductor surfaces to an atomic hydrogen flux under high vacuum for surface cleaning (oxide and carbon removal), followed immediately by an in-situ electron-beam evaporation of the metal layers.

  6. High-output-power densities from molecular beam epitaxy grown n- and p-type PbTeSe-based thermoelectrics via improved contact metallization

    SciTech Connect

    Goodhue, W. G.; Reeder, R. E.; Vineis, C. J.; Calawa, S. D.; Walsh, M. P.; Harman, T. C.; Dauplaise, H. M.; Vangala, S.

    2012-05-15

    Electrical power densities of up to 33 W/cm{sup 2} and up to 12 W/cm{sup 2} were obtained for n-type and p-type PbTeSe-based stand-alone thermoelectric devices, respectively, at modest temperature gradients of {approx}200 deg. C (T{sub cold}= 25 deg. C). These large power densities were enabled by greatly improving electrical contact resistivities in the thermoelectric devices. Electrical contacts with contact resistivities as low as 3.9 x 10{sup -6}{Omega} cm{sup 2} and 4.0 x 10{sup -6}{Omega} cm{sup 2} for n- and p-type telluride-based- materials, respectively, were developed by investigating several metallization schemes and contact layer doping/alloy combinations, in conjunction with a novel contact application process. This process exposes heated semiconductor surfaces to an atomic hydrogen flux under high vacuum for surface cleaning (oxide and carbon removal), followed immediately by an in-situ electron-beam evaporation of the metal layers.

  7. Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Kolkovsky, Vl.; Stübner, R.; Langa, S.; Wende, U.; Kaiser, B.; Conrad, H.; Schenk, H.

    2016-09-01

    In the present study the electrical properties of 100 nm and 400 nm alumina films grown by the atomic layer deposition technique on p-type Si before and after a post-deposition annealing at 440 °C and after a dc H plasma treatment at different temperatures are investigated. We show that the density of interface states is below 2 × 1010 cm-2 in these samples and this value is significantly lower compared to that reported previously in thinner alumina layers (below 50 nm). The effective minority carrier lifetime τg,eff and the effective surface recombination velocity seff in untreated p-type Si samples with 100 nm and 400 nm aluminum oxide is comparable with those obtained after thermal oxidation of 90 nm SiO2. Both, a post-deposition annealing in forming gas (nitrogen/hydrogen) at elevated temperatures and a dc H-plasma treatment at temperatures close to room temperature lead to the introduction of negatively charged defects in alumina films. The results obtained in samples annealed in different atmospheres at different temperatures or subjected to a dc H plasma treatment allow us to correlate these centers with H-related defects. By comparing with theory we tentatively assign them to negatively charged interstitial H atoms.

  8. NbFeSb based p-type half-Heusler for power generation applications

    NASA Astrophysics Data System (ADS)

    Joshi, Giri; He, Ran; Engber, Michael; Samsonidze, Georgy; Pantha, Tej; Dahal, Ekraj; Dahal, Keshab; Yang, Jian; Lan, Yucheng; Kozinsky, Boris; Ren, Zhifeng

    2015-03-01

    We report a peak dimensionless figure-of-merit (ZT) of ~1 at 700 oC in nanostructured p-type Nb0.6Ti0.4FeSb0.95Sn0.05composition. Even though the power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is improved by 25% in comparison to the previously reported p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2, the ZT value is not increased due to a higher thermal conductivity. However, the higher power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition led to a 15% increase in power output of a thermoelectric device in comparison to a device made from the previous best material Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. The n-type material used to make the unicouple device is the best reported nanostructured Hf0.25Zr0.75NiSn0.99Sb0.01 composition with the lowest hafnium (Hf) content. Both the p- and n-type nanostructured samples are prepared by ball milling the arc melted ingot and hot pressing the finely ground powders. Moreover, the raw material cost of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is more than six times lower compared to the cost of the previous best p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. This cost reduction is crucial for these materials to be used in large-scale quantities for vehicle and industrial waste heat recovery applications. DOE:DE-EE0004840.

  9. Hole transport through proton-irradiated p-type silicon wafers during electrochemical anodization

    SciTech Connect

    Breese, M. B. H.; Champeaux, F. J. T.; Bettiol, A. A.; Teo, E. J.; Blackwood, D. J.

    2006-01-15

    The hole current density flowing through and around proton-irradiated areas of p-type silicon during electrochemical anodization is simulated and studied experimentally using scanning electron microscopy and photoluminescence imaging. It is shown that for certain irradiation geometries the current flow may be either reduced or enhanced in areas adjacent to irradiated lines, resulting in enhanced or reduced rates of porous silicon formation and corresponding changes in photoluminescence intensity and feature height. The current flow to the surface is unaffected by both the beam straggle and the high defect density at the end of ion range, enabling feature dimensions of {approx}200 nm to be attained. This study has enabled fabrication of micromachined and patterned porous silicon structures in anodized wafers with accurate control of feature dimensions, layer thickness, and photoluminescence emission wavelength and intensity.

  10. Monte Carlo Simulation of Giant Piezoresistance Effect in p-TYPE Silicon Nanostructures

    NASA Astrophysics Data System (ADS)

    Nghiêm, T. T. Trang; Aubry-Fortuna, V.; Chassat, C.; Bosseboeuf, A.; Dollfus, P.

    We present a study of the giant piezoresistance effect in p-type silicon using full-band Monte Carlo simulation based on 30-band k.p calculation. This effect has been demonstrated experimentally in Si nanowires by He and Yang. By including the well-known strain effect on the band structure, and by introducing a law of variation of the surface potential according to the applied mechanical stress, we can reproduce this effect. This variation of surface potential modulates the depletion depth and then the conductivity of the structure. This modulation induces a strong variation of the total amount of carriers available for the conduction, which increases drastically this piezoresistive effect. This is probably the main origin of this effect, which may be used to achieve high performance MEMS sensors.

  11. Characterization of a P-type ATPase of the archaebacterium Methanococcus voltae.

    PubMed

    Dharmavaram, R M; Konisky, J

    1989-08-25

    The vanadate-sensitive ATPase of Methanococcus voltae has been purified by a procedure which includes, purification of the cytoplasmic membrane by sucrose gradient centrifugation, solubilization with Triton X-100, and DEAE-Sephadex and Sephacryl S-300 chromatography. While the DEAE-Sephadex step provided a preparation consisting of two polypeptides (74 and 52 kDa), the Sephacryl S-300 step yields a product with a subunit of 74 kDa. Incubation of either membranes or purified ATPase with [gamma-32P]ATP followed by acidic (pH 2.4) lithium dodecyl sulfate-polyacrylamide gel electrophoresis demonstrated the vanadate-sensitive labeling of a 74-kDa acyl phosphate intermediate. These results indicate that the M. voltae ATPase is of the P-type.

  12. P-type calcium channels are blocked by the alkaloid daurisoline.

    PubMed

    Lu, Y M; Fröstl, W; Dreessen, J; Knöpfel, T

    1994-07-21

    IN looking for a structurally defined non-peptide P-channel blocker we have tested the alkaloid daurisoline which has been isolated from traditional Chinese medicinal herb (Menispermum dauricum) used for the treatment of epilepsy, hypertension and asthma. We have found that daurisoline is an inhibitor of omega-Aga-IVA sensitive barium currents in cerebellar Purkinje cells and of excitatory postsynaptic potentials evoked in Purkinje cells by stimulating parallel fibres in acutely prepared cerebellar slices. Daurisoline did not significantly affect omega-Aga-IVA-insensitive barium currents recorded from granule cells freshly isolated from rat cerebellum. Daurisoline passes the blood-brain barrier and will, therefore, facilitate the functional characterization of brain calcium channels as well as the exploration of P-type calcium channels as possible drug targets.

  13. Photostable p-type dye-sensitized photoelectrochemical cells for water reduction.

    PubMed

    Ji, Zhiqiang; He, Mingfu; Huang, Zhongjie; Ozkan, Umit; Wu, Yiying

    2013-08-14

    A photostable p-type NiO photocathode based on a bifunctional cyclometalated ruthenium sensitizer and a cobaloxime catalyst has been created for visible-light-driven water reduction to produce H2. The sensitizer is anchored firmly on the surface of NiO, and the binding is resistant to the hydrolytic cleavage. The bifunctional sensitizer can also immobilize the water reduction catalyst. The resultant photoelectrode exhibits superior stability in aqueous solutions. Stable photocurrents have been observed over a period of hours. This finding is useful for addressing the degradation issue in dye-sensitized photoelectrochemical cells caused by desorption of dyes and catalysts. The high stability of our photocathodes should be important for the practical application of these devices for solar fuel production.

  14. Electron Traps Detected in p-type GaAsN Using Deep Level Transient Spectroscopy

    SciTech Connect

    Johnston, S.; Kurtz, S.; Friedman, D.; Ptak, A.; Ahrenkiel, R.; Crandall, R.

    2005-01-01

    The GaAsN alloy can have a band gap as small as 1.0 eV when the nitrogen composition is about 2%. Indium can also be added to the alloy to increase lattice matching to GaAs and Ge. These properties are advantageous for developing a highly-efficient, multi-junction solar cell. However, poor GaAsN cell properties, such as low open-circuit voltage, have led to inadequate performance. Deep-level transient spectroscopy of p-type GaAsN has identified an electron trap having an activation energy near 0.2 eV and a trap density of at least 1016 cm-3. This trap level appears with the addition of small amounts of nitrogen to GaAs, which also corresponds to an increased drop in open-circuit voltage.

  15. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs.

    PubMed

    Bioud, Youcef A; Boucherif, Abderraouf; Belarouci, Ali; Paradis, Etienne; Drouin, Dominique; Arès, Richard

    2016-12-01

    We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous As2O3. Finally, a qualitative model is proposed to explain the porous As2O3 layer formation on p-GaAs substrate.

  16. Quantitative copper measurement in oxidized p-type silicon wafers using microwave photoconductivity decay

    NASA Astrophysics Data System (ADS)

    Väinölä, H.; Saarnilehto, E.; Yli-Koski, M.; Haarahiltunen, A.; Sinkkonen, J.; Berenyi, G.; Pavelka, T.

    2005-07-01

    We propose a method to measure trace copper contamination in p-type silicon using the microwave photoconductivity decay (μ-PCD) technique. The method is based on the precipitation of interstitial copper, activated by high-intensity light, which results in enhanced minority carrier recombination activity. We show that there is a quantitative correlation between the enhanced recombination rate and the Cu concentration by comparing μ-PCD measurements with transient ion drift and total reflection x-ray fluorescence measurements. The results indicate that the method is capable of measuring Cu concentrations down to 1010cm-3. There are no limitations to wafer storage time if corona charge is used on the oxidized wafer surfaces as the charge prevents copper outdiffusion. We briefly discuss the role of oxide precipitates both in the copper precipitation and in the charge carrier recombination processes.

  17. Light Activated Copper Defects in P-Type Silicon Studied by PCD

    NASA Astrophysics Data System (ADS)

    Yli-Koski, M.; Väinölä, H.; Haarahiltunen, A.; Storgårds, J.; Saarnilehto, E.; Sinkkonen, J.

    2004-01-01

    We have studied copper defects in p-type silicon by measuring its precipitation kinetics by means of the microwave photoconductive decay (µPCD) technique. Copper atoms precipitated during high intensity light treatment at room temperature. We used the total reflection X-ray fluorescence (TXRF) and the transient ion drift (TID) techniques to determine the bulk concentration of copper. We estimated the density and the radius of the copper precipitates as well as the average capture cross-section for precipitated copper atoms from the measured copper precipitation time constant, bulk concentration of copper, and the change in the recombination rate. We also studied how the density of oxygen defect affects the copper precipitation. Our results show that copper precipitates at two different kinds of defects.

  18. Studies of minority carrier diffusion length increase in p-type ZnO:Sb

    SciTech Connect

    Lopatiuk-Tirpak, O.; Chernyak, L.; Xiu, F. X.; Liu, J. L.; Jang, S.; Ren, F.; Pearton, S. J.; Gartsman, K.; Feldman, Y.; Osinsky, A.; Chow, P.

    2006-10-15

    Minority electron diffusion length was measured in p-type, Sb-doped ZnO as a function of temperature using the electron beam induced current technique. A thermally induced increase of electron diffusion length was determined to have an activation energy of 184{+-}10 meV. Irradiation with a low energy (5 kV) electron beam also resulted in an increase of diffusion length with a similar activation energy (219{+-}8 meV). Both phenomena are suggested to involve a Sb{sub Zn}-2V{sub Zn} acceptor complex. Saturation and relaxation dynamics of minority carrier diffusion length are explored. Details of a possible mechanism for diffusion length increase are presented.

  19. Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

    SciTech Connect

    Fan, J. C.; Zhu, C. Y.; Fung, S.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Skorupa, W.; Anwand, W.

    2009-10-01

    As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above approx400 deg. C, the films changed from n type to p type. Hole concentration and mobility of approx6x10{sup 17} cm{sup -3} and approx6 cm{sup 2} V{sup -1} s{sup -1} were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As{sub Zn}-2V{sub Zn} shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

  20. DLTS of p-type Czochralski Si wafers containing processing-induced macropores

    NASA Astrophysics Data System (ADS)

    Simoen, E.; Depauw, V.; Gordon, I.; Poortmans, J.

    2012-01-01

    The deep levels present in p-type Czochralski silicon with processing-induced macropores in the depletion region have been studied by the deep-level transient (DLT) spectroscopy technique. It is shown that a broad band is present for a bias pulse close to the interface with the Al Schottky contact, which exhibits anomalously slow hole capture and is ascribed to the internal interface states of the macropores. For depths beyond the pore region, other deep levels, associated with point defects—possibly metal contamination during the high-temperature annealing step under H2 ambient--have been observed. The impact of the observed defects on the lifetime of thin-film solar cells, fabricated using macropore-based layer transfer is discussed. Finally, it is shown that the presence of pores in the depletion region, which also affects the DLT-spectrum, alters the capacitance-voltage characteristics.

  1. Microhardness of carbon-doped (111) p-type Czochralski silicon

    NASA Technical Reports Server (NTRS)

    Danyluk, S.; Lim, D. S.; Kalejs, J.

    1985-01-01

    The effect of carbon on (111) p-type Czochralski silicon is examined. The preparation of the silicon and microhardness test procedures are described, and the equation used to determine microhardness from indentations in the silicon wafers is presented. The results indicate that as the carbon concentration in the silicon increases the microhardness increases. The linear increase in microhardness is the result of carbon hindering dislocation motion, and the effect of temperature on silicon deformation and dislocation mobility is explained. The measured microhardness was compared with an analysis which is based on dislocation pinning by carbon; a good correlation was observed. The Labusch model for the effect of pinning sites on dislocation motion is given.

  2. Highly conductive p-type amorphous oxides from low-temperature solution processing

    SciTech Connect

    Li Jinwang; Tokumitsu, Eisuke; Koyano, Mikio; Mitani, Tadaoki; Shimoda, Tatsuya

    2012-09-24

    We report solution-processed, highly conductive (resistivity 1.3-3.8 m{Omega} cm), p-type amorphous A-B-O (A = Bi, Pb; B = Ru, Ir), processable at temperatures (down to 240 Degree-Sign C) that are compatible with plastic substrates. The film surfaces are smooth on the atomic scale. Bi-Ru-O was analyzed in detail. A small optical bandgap (0.2 eV) with a valence band maximum (VBM) below but very close to the Fermi level (binding energy E{sub VBM} = 0.04 eV) explains the high conductivity and suggests that they are degenerated semiconductors. The conductivity changes from three-dimensional to two-dimensional with decreasing temperature across 25 K.

  3. Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires

    PubMed Central

    2011-01-01

    Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination of non-degenerate transmission and reflection measurements reveal initial ultrafast state filling dynamics independent of the probing photon energy. This behavior is attributed to the occupation of states by photo-generated carriers in the intrinsic hole region of the p-type CuO nanowires located near the top of the valence band. Intensity measurements indicate an upper fluence threshold of 40 μJ/cm2 where carrier relaxation is mainly governed by the hole dynamics. The fast relaxation of the photo-generated carriers was determined to follow a double exponential decay with time constants of 0.4 ps and 2.1 ps. Furthermore, time-correlated single photon counting measurements provide evidence of three exponential relaxation channels on the nanosecond timescale. PMID:22151927

  4. p-Type zinc oxide films grown by infrared-light-assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Hiraide, Toshihiro; Kurumi, Satoshi; Suzuki, Kaoru

    2013-03-01

    In this paper, ZnO films were grown on sapphire (0001) substrates by infrared-light-assisted pulsed-laser deposition (IRA-PLD). In addition, a nitrogen-plasma-assisted (PA-N) system was utilized for effectively doping the acceptor by radio frequency induction coupled plasma (RF-ICP). The effect of IRA-PLD and PA-N systems was investigated by studying the difference in substrate temperature with and without plasma assistance. We found that ZnO films exhibit no exciton emission with PA-N at a high temperature and that an increase in the substrate temperature yields ZnO films with a (002) and c-axis preferred orientation in a nitrogen (N2) gas atmosphere. ZnO films are changed from n-type to p-type at a substrate temperature of 673 K by IRA-PLD with an N2 background atmosphere.

  5. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors.

    PubMed

    Kim, Bongjun; Geier, Michael L; Hersam, Mark C; Dodabalapur, Ananth

    2017-02-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.

  6. Origin of resistivity anomaly in p-type leads chalcogenide multiphase compounds

    SciTech Connect

    Aminorroaya Yamini, Sima E-mail: jsnyder@caltech.edu; Dou, Shi Xue; Mitchell, David R. G.; Wang, Heng; Gibbs, Zachary M.; Pei, Yanzhong; Snyder, G. Jeffrey E-mail: jsnyder@caltech.edu

    2015-05-15

    The electrical resistivity curves for binary phase compounds of p-type lead chalcogenide (PbTe){sub (0.9−x)}(PbSe){sub 0.1}(PbS){sub x,} (x = 0.15, 0.2, 0.25), which contain PbS-rich secondary phases, show different behaviour on heating and cooling between 500-700 K. This is contrast to single phase compounds which exhibit similar behaviour on heating and cooling. We correlate these anomalies in the electrical resistivities of multiphase compounds to the variation in phase composition at high temperatures. The inhomogeneous distribution of dopants between the matrix and secondary phase is found to be crucial in the electronic transport properties of the multiphase compounds. These results can lead to further advances in designing composite Pb-chalcogenides with high thermoelectric performance.

  7. Microhardness studies on thin carbon films grown on P-type, (100) silicon

    NASA Technical Reports Server (NTRS)

    Kolecki, J. C.

    1982-01-01

    A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

  8. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

    PubMed Central

    Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

    2017-01-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design. PMID:28145438

  9. Phonon bottleneck in p-type Ge/Si quantum dots

    SciTech Connect

    Yakimov, A. I.; Kirienko, V. V.; Armbrister, V. A.; Bloshkin, A. A.; Dvurechenskii, A. V.

    2015-11-23

    We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied by changing the Ge coverage and the growth temperature during molecular beam epitaxy of Ge/Si(001) system in the Stranski-Krastanov growth mode. In all samples, we observed the general tendency: with decreasing the size of the dots, the dark current and hole capture probability are reduced, while the photoconductive gain and photoresponse are enhanced. Suppression of the hole capture probability in small-sized quantum dots is attributed to a quenched electron-phonon scattering due to phonon bottleneck.

  10. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

    2017-02-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.

  11. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    NASA Astrophysics Data System (ADS)

    Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

    2017-04-01

    More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm2 V-1 s-1, which is much higher than that of MoS2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  12. Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Fan, J. C.; Zhu, C. Y.; Fung, S.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Anwand, W.; Skorupa, W.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.

    2009-10-01

    As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ˜400 °C, the films changed from n type to p type. Hole concentration and mobility of ˜6×1017 cm-3 and ˜6 cm2 V-1 s-1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the AsZn-2VZn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

  13. Conduction type control from n to p type for organic pigment films purified by reactive sublimation

    NASA Astrophysics Data System (ADS)

    Hiramoto, Masahiro; Ihara, Kiyoaki; Fukusumi, Hiroyuki; Yokoyama, Masaaki

    1995-12-01

    The effects of purification by reactive sublimation technique and bromine doping on the Fermi level and the photovoltaic properties of n-type perylene pigment films were investigated. Photovoltage arisen from the Schottky junction between n-type perylene pigment film and Au increased significantly by repeating the train sublimation under methylamine gas atmosphere. This phenomenon was revealed to be due to the negative shift of the Fermi level resulting from the effective removal of unknown but specific impurity acting as an acceptor by reactive sublimation. On the other hand, by bromine doping, Fermi level of the pigment film shifted largely to a positive direction and reached the nearby valence band, while the direction of photocurrent flow arising from the Schottky junction with Au was reversed. This result is a clear demonstration of alternating the type of conduction from n type to p type. This means that the pn control of organic semiconductors is possible.

  14. Polymer photovoltaic cell embedded with p-type single walled carbon nanotubes fabricated by spray process.

    PubMed

    Kim, Dal-Ho; Park, Jea-Gun

    2012-08-17

    In the current study, we fabricated polymer (poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl-C(61) butyric-acid methyl-ester (PCBM) blend) photovoltaic (PV) cells embedded with p-type single walled carbon nanotubes (SWCNTs) with tangled hair morphology. The power conversion efficiency (PCE) rapidly increased with SWCNT concentration of up to 6.83% coverage, and then decreased and saturated with increasing SWCNT concentration; i.e., the PCE peaks at 5.379%. This tendency is mainly associated with hole transport efficiency toward the transparent electrode (indium-tin-oxide (ITO)) via SWCNTs, directly determining the series resistance and shunt resistance of the polymer PV cells embedded with SWCNTs: the PV cell is increasing shunt resistance and decreasing series resistance.

  15. Formation and annealing of radiation defects in tin-doped p-type germanium crystals

    SciTech Connect

    Litvinov, V. V. Petukh, A. N.; Pokotilo, Ju. M.; Markevich, V. P.; Lastovskii, S. B.

    2012-05-15

    The effect of tin on the formation and annealing of radiation defects in p-type germanium crystals irradiated with 6-MeV electrons at a temperature of 80 K is studied. It is shown that acceptor complexes SnV with a hole ionization enthalpy of 0.16 eV are dominant in irradiated Ge:(Sn, Ga) crystals after their heating to a temperature of 300 K. These complexes disappeared as a result of the annealing of irradiated crystals in the temperature range 30-75 Degree-Sign C. Annealing of irradiated crystals at temperatures in the range 110-150 Degree-Sign C brings about the formation of deep-level centers with a donor level at E{sub v} + 0.29 eV; this center is presumably related to a complex consisting of a tin atom and an interstitial gallium atom.

  16. Improved performance of P-type DSCs with a compact blocking layer coated by different thicknesses

    NASA Astrophysics Data System (ADS)

    Ho, Phuong; Bao, Le Quoc; Cheruku, Rajesh; Kim, Jae Hong

    2016-09-01

    The introduction of different thicknesses of a compact NiO blocking layer coating with different spin speeds on FTO and followed by a coating of photoactive NiO electrode for p-type dye-sensitized solar cells ( p-DSCs). This study examined the fabrication of a compact NiO blocking layer by decomposing an ethanolic precursor solution of nickel acetate tetrahydrate. The DCBZ dye used as the photosensitizer for the NiO electrode in the p-DSCs device and their performances have been analyzed. The enhancement of photovoltaic performance and resulted from an increase in the power conversion efficiency ( η). The electrochemical impedance spectroscopy (EIS) measurement demonstrated that charge recombination was suppressed when a compact NiO blocking layer was applied. The results showed that the best p-DSC was achieved by employing 3000 rpm spin-coated process for different times of blocking layer.

  17. Rat submaxillary gland contains predominantly P-type tachykinin binding sites

    SciTech Connect

    Buck, S.H.; Burcher, E.

    1985-11-01

    The specific binding of the /sup 125/I-Bolton-Hunter labeled tachykinins substance K (BHSK), eledoisin (BHE), and substance P (BHSP) was examined in crude membrane suspensions and by autoradiography in rat submaxillary gland. All three ligands at 0.1 nM concentrations exhibited binding that was inhibited by tachykinins in a potency rank order of substance P greater than physalaemin greater than substance K greater than eledoisin greater than kassinin greater than neuromedin K with slope factors essentially equal to unity. All tachykinins were 5 to 10 times more potent in inhibiting BHSK and BHE binding compared to BHSP binding. Autoradiographic visualization of BHSK and BHSP binding sites in the gland revealed extensive labeling of mucous and serous acini. The intensity of labeling was much less for BHSK than for BHSP. The results indicate that the rat submaxillary gland contains predominantly P-type tachykinin binding sites.

  18. High resolution transmission electron microscopy characterization of fcc --> 9R transformation in nanocrystalline palladium films due to hydriding

    NASA Astrophysics Data System (ADS)

    Amin-Ahmadi, Behnam; Idrissi, Hosni; Delmelle, Renaud; Pardoen, Thomas; Proost, Joris; Schryvers, Dominique

    2013-02-01

    Sputtered nanocrystalline palladium thin films with nanoscale growth twins have been subjected to hydriding cycles. The evolution of the twin boundaries has been investigated using high resolution transmission electron microscopy. Surprisingly, the ∑3{112} incoherent twin boundaries dissociate after hydriding into two phase boundaries bounding a 9R phase. This phase which corresponds to single stacking faults located every three {111} planes in the fcc Pd structure was not expected because of the high stacking fault energy of Pd. This observation is connected to the influence of the Hydrogen on the stacking fault energy of palladium and the high compressive stresses building up during hydriding.

  19. Glucose-assisted reduction achieved transparent p-type cuprous oxide thin film by a solution method

    NASA Astrophysics Data System (ADS)

    Nie, Sha; Sun, Jian; Gong, Hao; Chen, Zequn; Huang, Yifei; Xu, Jianmei; Zhao, Ling; Zhou, Wei; Wang, Qing

    2016-08-01

    The fabrication of p-type cuprous oxide thin film via a cheap and simple chemical method has been known as challenging. We first find that glucose can assist reduce Cu to a lower valence state in the preparation of cuprous oxide films by the sol-gel method. By first adding glucose in the sol as reducing agent, oxidation from the oxygen in the environment is limited and transparent p-type cuprous oxide films are eventually achieved under optimized experimental conditions. We have developed a p-type cuprous oxide thin film with an optimal Hall mobility of ∼8 cm2/Vs and an optical transmittance of 78%.

  20. First-principles study of Be doped CuAlS2 for p-type transparent conductive materials

    NASA Astrophysics Data System (ADS)

    Huang, Dan; Zhao, Yu-Jun; Tian, Ren-Yu; Chen, Di-Hu; Nie, Jian-Jun; Cai, Xin-Hua; Yao, Chun-Mei

    2011-06-01

    CuAlS2 has attracted much attention recently as a p-type transparent conductive material. In this paper, we investigate the site preference of substitutional Be in CuAlS2 and the transition level of BeAl using the first-principles calculation. We find that Be would be doped effectively at Al sites in CuAlS2 as a good p-type dopant. In addition, we speculate that Be-Mg or Be-Zn codoped CuAlS2 could have a mobility enhancement and thus a good p-type conductivity due to low lattice distortion.

  1. Study of the electron field emission and microstructure correlation in nanocrystalline carbon thin films

    NASA Astrophysics Data System (ADS)

    Gupta, S.; Weiss, B. L.; Weiner, B. R.; Morell, G.

    2001-05-01

    Nanocrystalline carbon thin films were deposited by hot-filament chemical vapor deposition using a 2% concentration of methane in hydrogen. The films were deposited on molybdenum substrates under various substrate biasing conditions. A positive bias produced a continuous flow of electrons from the filament onto the substrate, while a negative bias caused the substrate to be bombarded with positive ions. Films were also grown under no bias, for comparison. Differences in the electron field emission properties (turn-on fields and emitted currents) of these films were characterized. Correspondingly, microstructural differences were also studied, as characterized with atomic force microscopy and Raman spectroscopy. Films grown under electron bombardment showed lower turn-on fields, smoother surfaces, and smaller grains than those grown under ion bombardment or no bias. A correlation between the enhanced emission properties and the nanocrystalline carbon material produced by the low-energy particle bombardment was found through the parameters obtained using spectroscopic ellipsometry modeling. The results confirm the significant role of defects on the electron field emission mechanism.

  2. Effect of Water Vapor Adsorption on Electrical Properties of Carbon Nanotube/Nanocrystalline Cellulose Composites.

    PubMed

    Safari, Salman; van de Ven, Theo G M

    2016-04-13

    It has been long known that the electrical properties of cellulose are greatly influenced by adsorption of water vapor. Incorporating conductive nanofillers in a cellulose matrix is an example of an approach to tailor their characteristics for use in electronics and sensing devices. In this work, we introduce two new nanocomposites comprising carbon nanotubes (CNTs) and conventional or electrosterically stabilized nanocrystalline celluloses matrices. While conventional nanocrystalline cellulose (NCC) consists of a rigid crystalline backbone, electrosterically stabilized cellulose (ENCC) is composed of a rigid crystalline backbone with carboxylated polymers protruding from both ends. By tuning CNT loading, we can tailor a CNT/NCC composite with minimal electrical sensitivity to the ambient relative humidity, despite the fact that the composite has a high moisture uptake. The expected decrease in CNT conductivity upon water vapor adsorption, due to electron donation, is counterbalanced by an increase in the conductivity of NCC due to proton hopping at an optimum CNT loading (1-2%). Contrary to the CNT/NCC composite, a CNT/ENCC composite at 1% CNT loading shows insulating behavior for relative humidities up to 75%, after which the composite becomes conductive. This interesting behavior can be ascribed to the low moisture uptake of ENCC at low and moderate relative humidities due to the limited number of hydroxyl groups and hydrogen bond formation between carboxyl groups on ENCC, which endow ENCC with limited water molecule adsorption sites.

  3. Structural properties of highly conductive ultra-nanocrystalline diamond films grown by hot-filament CVD

    NASA Astrophysics Data System (ADS)

    Mertens, M.; Lin, I.-N.; Manoharan, D.; Moeinian, A.; Brühne, K.; Fecht, H. J.

    2017-01-01

    In this work we show the correlation of the electrical conductivity of ultra-nanocrystalline (UNCD) diamond films grown by hot filament chemical vapor deposition (HFCVD) with their structural properties. The substrate temperature, the methane to hydrogen ratio and the pressure are the main factor influencing the growth of conductive UNCD films, which extends from electrical resistive diamond films (<10-4 S/cm) to highly conductive diamond films with a specific conductivity of 300 S/cm. High-resolution-transmission-electron-microscopy (HRTEM) and electron-energy-loss-spectroscopy (EELS) have been done on the highly conductive diamond films, to show the origin of the high electrical conductivity. The HRTEM results show random oriented diamond grains and a large amount of nano-graphite between the diamond crystals. EELS investigations are confirming these results. Raman measurements are correlated with the specific conductivity, which shows structural changes of sp2 carbons bonds as function of conductivity. Hall experiments complete the results, which lead to a model of an electron mobility based conductivity, which is influenced by the structural properties of the grain boundary regions in the ultra-nanocrystalline diamond films.

  4. Monolithic Nanocrystalline Au Fabricated by the Compaction of Nanoscale Foam

    SciTech Connect

    Hodge, A M; Biener, J; Hsiung, L M; Hamza, A V; Satcher Jr., J H

    2004-07-28

    We describe a two-step dealloying/compaction process to produce nanocrystalline Au. First, nanocrystalline/nanoporous Au foam is synthesized by electrochemically-driven dealloying. The resulting Au foams exhibit porosities of 60 and 70% with pore sizes of {approx} 40 and 100 nm, respectively, and a typical grain size of <50 nm. Second, the nanoporous foams are fully compacted to produce nanocrystalline monolithic Au. The compacted Au was characterized by TEM and X-ray diffraction and tested by depth-sensing nanoindentation. The compacted nanocrystalline Au exhibits an average grain size of <50 nm and hardness values ranging from 1.4 to 2.0 GPa, which are up to 4.5 times higher than the hardness values obtained from polycrystalline Au.

  5. High Temperature Stable Nanocrystalline SiGe Thermoelectric Material

    NASA Technical Reports Server (NTRS)

    Yang, Sherwin (Inventor); Matejczyk, Daniel Edward (Inventor); Determan, William (Inventor)

    2013-01-01

    A method of forming a nanocomposite thermoelectric material having microstructural stability at temperatures greater than 1000 C. The method includes creating nanocrystalline powder by cryomilling. The method is particularly useful in forming SiGe alloy powder.

  6. Relationship between nanocrystalline and amorphous microstructures by molecular dynamics simulation

    SciTech Connect

    Keblinski, P.; Phillpot, S.R.; Wolf, D.; Gleiter, H.

    1996-08-01

    A recent molecular dynamics simulation method for growth of fully dense nanocrystalline materials crystallized from melt was used with the Stillinger-Weber three-body potential to synthesize nanocrystalline Si with a grain size up to 75{Angstrom}. Structures of the highly constrained grain boundaries (GBs), triple lines, and point grain junctions were found to be highly disordered and similar to the structure of amorphous Si. These and earlier results for fcc metals suggest that a nanocrystalline microstructure may be viewed as a two-phase system, namely an ordered crystalline phase in the grain interiors connected by an amorphous, intergranular, glue-like phase. Analysis of the structures of bicrystalline GBs in the same materials reveals the presence of an amorphous intergranular equilibrium phase only in the high-energy but not the low-energy GBs, suggesting that only high-energy boundaries are present in nanocrystalline microstructures.

  7. Fatigue stress concentration and notch sensitivity in nanocrystalline metals

    SciTech Connect

    Furnish, Timothy A.; Boyce, Brad L.; Sharon, John A.; O’Brien, Christopher J.; Clark, Blythe G.; Arrington, Christian L.; Pillars, Jamin R.

    2016-03-11

    Recent studies have shown the potential for nanocrystalline metals to possess excellent fatigue resistance compared to their coarse-grained counterparts. Although the mechanical properties of nanocrystalline metals are believed to be particularly susceptible to material defects, a systematic study of the effects of geometric discontinuities on their fatigue performance has not yet been performed. In the present work, nanocrystalline Ni–40 wt%Fe containing both intrinsic and extrinsic defects were tested in tension–tension fatigue. The defects were found to dramatically reduce the fatigue resistance, which was attributed to the relatively high notch sensitivity in the nanocrystalline material. Microstructural analysis within the crack-initiation zones underneath the defects revealed cyclically-induced abnormal grain growth (AGG) as a predominant deformation and crack initiation mechanism during high-cycle fatigue. Furthermore, the onset of AGG and the ensuing fracture is likely accelerated by the stress concentrations, resulting in the reduced fatigue resistance compared to the relatively defect-free counterparts.

  8. Luminescence and related properties of nanocrystalline porous silicon

    NASA Astrophysics Data System (ADS)

    Koshida, N.

    This document is part of subvolume C3 'Optical Properties' of volume 34 'Semiconductor quantum structures' of Landolt-Börnstein, Group III, Condensed Matter, on the optical properties of quantum structures based on group IV semiconductors. It discusses luminescence and related properties of nanocrystalline porous silicon. Topics include an overview of nanostructured silicon, its fabrication technology, and properties of nanocrystalline porous silicon such as confinement effects, photoluminescence, electroluminesce, carrier charging effects, ballistic transport and emission, and thermally induced acoustic emission.

  9. Supra- and nanocrystallinities: a new scientific adventure

    NASA Astrophysics Data System (ADS)

    Pileni, M. P.

    2011-12-01

    Nanomaterials exist in the interstellar medium, in biology, in art and also metallurgy. Assemblies of nanomaterials were observed in the early solar system as well as silicate particle opals. The latter exhibits unusual optical properties directly dependent on particle ordering in 3D superlattices. The optical properties of noble metal nanoparticles (Ag, Au and Cu) change with the ordering of atoms in the nanocrystals, called nanocrystallinity. The vibrational properties related to nanocrystallinity markedly differ with the vibrational modes studied. Hence, a drastic effect on nanocrystallinity is observed on the confined acoustic vibrational property of the fundamental quadrupolar modes whereas the breathing acoustic modes remain quasi-unchanged. The mechanical properties characterized by the Young’s modulus of multiply twinned particle (MTP) films are markedly lower than those of single nanocrystals. Two fcc supracrystal growth mechanisms, supported by simulation, of Au nanocrystals are proposed: heterogeneous and homogeneous growth processes. The final morphology of nanocrystal assemblies, with either films by layer-by-layer growth characterized by their plastic deformation or well-defined shapes grown in solution, depends on the solvent used to disperse the nanocrystals before the evaporation process. At thermodynamic equilibrium, two simultaneous supracrystal growth processes of Au nanocrystals take place in solution and at the air-liquid interface. These growth processes are rationalized by simulation. They involve, on the one hand, van der Waals interactions and, on the other hand, the attractive interaction between nanocrystals and the interface. Ag nanocrystals (5 nm) self-order in colloidal crystals with various arrangements called supracrystallinities. As in bulk materials, phase diagrams of supracrystals with structural transitions from face-centered-cubic (fcc) to hexagonal-close-packed (hcp) and body-centered-cubic (bcc) structures are observed

  10. Supra- and nanocrystallinities: a new scientific adventure.

    PubMed

    Pileni, M P

    2011-12-21

    Nanomaterials exist in the interstellar medium, in biology, in art and also metallurgy. Assemblies of nanomaterials were observed in the early solar system as well as silicate particle opals. The latter exhibits unusual optical properties directly dependent on particle ordering in 3D superlattices.The optical properties of noble metal nanoparticles (Ag, Au and Cu) change with the ordering of atoms in the nanocrystals, called nanocrystallinity. The vibrational properties related to nanocrystallinity markedly differ with the vibrational modes studied. Hence, a drastic effect on nanocrystallinity is observed on the confined acoustic vibrational property of the fundamental quadrupolar modes whereas the breathing acoustic modes remain quasi-unchanged. The mechanical properties characterized by the Young's modulus of multiply twinned particle (MTP) films are markedly lower than those of single nanocrystals.Two fcc supracrystal growth mechanisms, supported by simulation, of Au nanocrystals are proposed: heterogeneous and homogeneous growth processes. The final morphology of nanocrystal assemblies, with either films by layer-by-layer growth characterized by their plastic deformation or well-defined shapes grown in solution, depends on the solvent used to disperse the nanocrystals before the evaporation process.At thermodynamic equilibrium, two simultaneous supracrystal growth processes of Au nanocrystals take place in solution and at the air-liquid interface. These growth processes are rationalized by simulation. They involve, on the one hand, van der Waals interactions and, on the other hand, the attractive interaction between nanocrystals and the interface.Ag nanocrystals (5 nm) self-order in colloidal crystals with various arrangements called supracrystallinities. As in bulk materials, phase diagrams of supracrystals with structural transitions from face-centered-cubic (fcc) to hexagonal-close-packed (hcp) and body-centered-cubic (bcc) structures are observed. They

  11. Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

    NASA Astrophysics Data System (ADS)

    Guo, L.; Wang, X. Q.; Zheng, X. T.; Yang, X. L.; Xu, F. J.; Tang, N.; Lu, L. W.; Ge, W. K.; Shen, B.; Dmowski, L. H.; Suski, T.

    2014-03-01

    We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions.

  12. Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement.

    PubMed

    Guo, L; Wang, X Q; Zheng, X T; Yang, X L; Xu, F J; Tang, N; Lu, L W; Ge, W K; Shen, B; Dmowski, L H; Suski, T

    2014-03-13

    We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions.

  13. Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

    PubMed Central

    Guo, L.; Wang, X. Q.; Zheng, X. T.; Yang, X. L.; Xu, F. J.; Tang, N.; Lu, L. W.; Ge, W. K.; Shen, B.; Dmowski, L. H.; Suski, T.

    2014-01-01

    We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions. PMID:24621830

  14. Mechanisms for p -type behavior of ZnO, Zn1 -xMgxO , and related oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Urban, Daniel F.; Körner, Wolfgang; Elsässer, Christian

    2016-08-01

    The possibilities of turning intrinsically n -type oxide semiconductors like ZnO and Zn1 -xMgxO into p -type materials are investigated. Motivated by recent experiments on Zn1 -xMgxO doped with nitrogen, we analyze the electronic defect levels of point defects NO,vZn, and NO-vZn pairs in ZnO and Zn1 -xMgxO by means of self-interaction-corrected density functional theory calculations. We show how the interplay of defects can lead to shallow acceptor defect levels, although the levels of individual point defects NO are too deep in the band gap to be responsible for p -type conduction. We relate our results to p -type conduction paths at grain boundaries seen in polycrystalline ZnO and develop an understanding of a p -type mechanism which is common to ZnO, Zn1 -xMgxO , and related materials.

  15. Ultrashort-pulse laser ablation of nanocrystalline aluminum

    SciTech Connect

    Gill-Comeau, Maxime; Lewis, Laurent J.

    2011-12-01

    Molecular-dynamics simulations of the ablation of nanocrystalline Al films by ultrashort laser pulses in the low-fluence (no-ionization) regime (0-2.5 times the ablation threshold, F{sub th}) are reported. The simulations employ an embedded-atom method potential for the dynamics of the ions and a realistic two-temperature model for the electron gas (and its interactions with the ion gas), which confers different electronic properties to the monocrystalline solid, nanocrystalline solid, and liquid regions of the targets. The ablation dynamics in three nanocrystalline structures is studied: two dense targets with different crystallite sizes (d=3.1 and 6.2 nm on average) and a d=6.2 nm porous sample. The results are compared to the ablation of monocrystalline Al. Significant differences are observed, the nanocrystalline targets showing, in particular, a lower ablation threshold and a larger melting depth, and yielding pressure waves of higher amplitude than the monocrystalline targets. Furthermore, it is shown that nanocrystalline targets experience no residual stress associated with thermal expansion and lateral constraints, and that little crystal growth occurs in the solid during and after ablation. Laser-induced spallation of the back surface of the films is also investigated; we find, in particular, that the high-strain fracture resistance of nanocrystalline samples is significantly reduced in comparison to the crystalline material.

  16. Measurements of grain boundary properties in nanocrystalline ceramics

    SciTech Connect

    Chiang, Y.M.; Smyth, I.P.; Terwilliger, C.D. . Dept. of Materials Science and Engineering); Petuskey, W.T. . Dept. of Chemistry); Eastman, J.A. )

    1990-11-01

    The advent of nanocrystalline ceramics prepared by a variety of solution-chemical and vapor deposition methods offers a unique opportunity for the determination grain boundary properties by bulk'' thermodynamic methods. In this paper we discuss results from two types of measurements on model nanocrystalline ceramics. The first is a solution thermodynamic measurement of the activity of nanocrystalline SiC in polycarbosilane-derived silicon carbide fibers (Nicalon). Structural studies have shown that Nicalon consists of well-ordered cubic ({beta} or 3C polytype) SiC grains separated by a very thin grain boundary layer (<1 nm thick) containing the oxygen. The physical properties and chemical reactivity of these fibers are distinctly different from that of bulk silicon carbide. Direct measurement of the alloy composition and analysis of the microstructure has allowed the dissolution reaction to be identified and a lower limit for the SiC activity in the nanocrystalline form to be determined. A second method of measuring grain boundary properties we have investigated for nanocrystalline Si and TiO{sub 2} is high temperature calorimetry. In appropriate samples the grain boundary enthalpy can be measured through the heat evolved during grain growth. Preliminary results on nanocrystalline Si prepared by the recrystallization of amorphous evaporated films and on TiO{sub 2} condensed from the vapor phase are discussed. 29 refs., 3 figs., 1 tab.

  17. Growth and Characterization of the p-type Semiconductors Tin Sulfide and Bismuth Copper Oxy Selenide

    NASA Astrophysics Data System (ADS)

    Francis, Jason

    BiCuOSe and SnS are layered, moderate band gap (epsilon G ≈ 1 eV) semiconductors that exhibit intrinsic p type conductivity. Doping of BiCuOSe with Ca results in a slight expansion of the lattice and an increase of the hole concentration from 10 18 cm--3 to greater than 1020 cm --3. The large carrier density in undoped films is the result of copper vacancies. Mobility is unaffected by doping, remaining constant at 1.5 cm2V--1s--1 in both undoped and doped films, because the Bi-O layers serve as the source of carriers, while transport occurs within the Cu-Se layers. Bi possesses a 6s2 lone pair that was expected to hybridize with the oxygen p states at the top of the valence band, resulting in high hole mobility as compared to similar materials such as LaCuOSe, which lack this lone pair. However, both LaCuOSe and BiCuOSe have similar hole mobility. X-ray absorption and emission spectroscopy, combined with density functional theory calculations, reveal that the Bi 6 s states contribute deep within the valence band, forming bonding and anti-bonding states with O 2p at 11 eV and 3 eV below the valence band maximum, respectively. Hence, the Bi lone pair does not contribute at the top of the valence band and does not enhance the hole mobility. The Bi 6p states contribute at the bottom of the conduction band, resulting in a smaller band gap for BiCuOSe than LaCuOSe (1 eV vs. 3 eV). SnS is a potential photovoltaic absorber composed of weakly coupled layers stacked along the long axis. This weak coupling results in the formation of strongly oriented films on amorphous substrates. The optical band gap is 1.2 eV, in agreement with GW calculations. Absorption reaches 105 cm--1 within 0.5 eV of the band gap. The p type conduction arises from energetically favorable tin vacancies. Variation of growth conditions yields carrier densities of 1014 -- 1016 cm--3 and hole mobility of 7 -- 15 cm2V--1s--1. SnS was alloyed with rocksalt CaS, which was predicted to form a rocksalt

  18. Defect studies in copper-based p-type transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Ameena, Fnu

    Among other intrinsic open-volume defects, copper vacancy (VCu) has been theoretically identified as the major acceptor in p-type Cu-based semiconducting transparent oxides, which has potential as low-cost photovoltaic absorbers in semi-transparent solar cells. A series of positron annihilation experiments with pure Cu, Cu2O, and CuO presented strong presence of VCu and its complexes in the copper oxides. The lifetime data also showed that the density of VCu was becoming higher as the oxidation state of Cu increased which was consistent with the decrease in the formation energy of VCu. Doppler broadening measurements further indicated that electrons with low momentum made more contribution to the contributed as pure Cu oxidizes to copper oxides. The metastable defects are known to be generated in Cu2O upon illumination and it has been known to affect the performance of Cu2O-based hetero-junctions used in solar cells. The metastable effect was studied using positron annihilation lifetime spectroscopy and its data showed the change in the defect population upon light exposure and the minimal effect of light-induced electron density increase in the bulk of materials to the average lifetime of the positrons. The change in the defect population is concluded to be related to the dissociation and association of VCu -- V Cu complexes. For example, the shorter lifetime under light was ascribed to the annihilation with smaller size vacancies, which explains the dissociation of the complexes with light illumination. Doppler broadening of the annihilation was independent of light illumination, which suggested that the chemical nature of the defects remained without change upon their dissociation and association -- only the size distribution of copper vacancies varied. The delafossite metal oxides, CuMIIIO2 are emerging wide-bandgap p-type semiconductors. In this research, the formation energies of structural vacancies are calculated using Van Vechten cavity model as an attempt

  19. Homoleptic copper(I) arylthiolates as a new class of p-type charge carriers: structures and charge mobility studies.

    PubMed

    Che, Chi-Ming; Li, Cheng-Hui; Chui, Stephen Sin-Yin; Roy, V A L; Low, Kam-Hung

    2008-01-01

    Polymeric homoleptic copper(I) arylthiolates [Cu(p-SC(6)H(4)-X)](infinity) (X=CH(3) (1), H (2), CH(3)O (3), tBu (4), CF(3) (5), NO(2) (6), and COOH (7)) have been prepared as insoluble crystalline solids in good yields (75-95 %). Structure determinations by powder X-ray diffraction analysis have revealed that 1-3 and 6 form polymers of infinite chain length, with the copper atoms bridged by arylthiolate ligands. Weak intra-chain pi***pi stacking interactions are present in 1-3, as evidenced by the distances (3.210 A in 1, 3.016 A in 2, 3.401 A in 3) between the mean planes of neighboring phenyl rings. In the structure of 6, the intra-chain pi***pi interactions (d=3.711 A) are insignificant and the chain polymers are associated through weak, non-covalent C-H...O hydrogen-bonding interactions (d=2.586 A). Samples of 1-7 in their polycrystalline forms proved to be thermally stable at 200-300 degrees C; their respective decomposition temperatures are around 100 degrees C higher than that of the aliphatic analogue [Cu(SCH(3))](infinity). Data from in situ variable-temperature X-ray diffractometry measurements indicated that the structures of both 1 and 7 are thermally more robust than that of [Cu(SCH(3))](infinity). TEM analysis revealed that the solid samples of 1-5 and [Cu(SCH(3))](infinity) contained homogeneously dispersed crystalline nanorods with widths of 20-250 nm, whereas smaller plate-like nanocrystals were found for 6 and 7. SAED data showed that the chain polymers of 1-3 and [Cu(SCH(3))](infinity) similarly extend along the long axes of their nanorods. The nanorods of 1-5 and [Cu(SCH(3))](infinity) have been found to exhibit p-type field-effect transistor behavior, with charge mobility (micro) values of 10(-2)-10(-5) cm(2) V(-1) s(-1). Polycrystalline solid samples of 6 and 7 each showed a low charge mobility (<10(-6) cm(2) V(-1) s(-1)). The charge mobility values of field-effect transistors made from crystalline nanorods of 1-3 and [Cu(SCH(3))](infinity

  20. Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

    PubMed

    Nipane, Ankur; Karmakar, Debjani; Kaushik, Naveen; Karande, Shruti; Lodha, Saurabh

    2016-02-23

    P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 × 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly.

  1. Characterization of Eletrodeposited Nanocrystalline Ni Microtrusses

    NASA Astrophysics Data System (ADS)

    Liu, Gongtao

    Polymer microtrusses with nanocrystalline nickel coatings can exhibit excellent mechanical performance, which is greatly dependent on the thickness distribution of the coating. The dependence of coating thickness distribution on the electrodeposition parameters was investigated by numerical modeling. From the models, it was found that the coating thickness distribution on the struts tends to become more uneven with the increase in plating time and current density. A method has been established to predict the coating thickness distribution at different times. Experimental characterization methods were also developed. First, X-ray tomography was used for characterizing the thickness distribution. It was found that the surface roughness of the starting template greatly influences the coating thickness distribution of plated materials. Second, a mechanical test fixture was developed to accurately measure the inelastic buckling resistance of the core struts in compression. The reliability of the test method was investigated using microtrusses consisting of various numbers of unit cells and unit cell sizes.

  2. Toughness and strength of nanocrystalline graphene

    PubMed Central

    Shekhawat, Ashivni; Ritchie, Robert O.

    2016-01-01

    Pristine monocrystalline graphene is claimed to be the strongest material known with remarkable mechanical and electrical properties. However, graphene made with scalable fabrication techniques is polycrystalline and contains inherent nanoscale line and point defects—grain boundaries and grain-boundary triple junctions—that lead to significant statistical fluctuations in toughness and strength. These fluctuations become particularly pronounced for nanocrystalline graphene where the density of defects is high. Here we use large-scale simulation and continuum modelling to show that the statistical variation in toughness and strength can be understood with ‘weakest-link' statistics. We develop the first statistical theory of toughness in polycrystalline graphene, and elucidate the nanoscale origins of the grain-size dependence of its strength and toughness. Our results should lead to more reliable graphene device design, and provide a framework to interpret experimental results in a broad class of two-dimensional materials. PMID:26817712

  3. Reinforced plastics and aerogels by nanocrystalline cellulose

    NASA Astrophysics Data System (ADS)

    Leung, Alfred C. W.; Lam, Edmond; Chong, Jonathan; Hrapovic, Sabahudin; Luong, John H. T.

    2013-05-01

    Nanocrystalline cellulose (NCC), a rigid rod-like nanoscale material, can be produced from cellulosic biomass in powder, liquid, or gel forms by acid and chemical hydrolysis. Owing to its unique and exceptional physicochemical properties, the incorporation of a small amount of NCC into plastic enhances the mechanical strength of the latter by several orders of magnitudes. Carbohydrate-based NCC poses no serious environmental concerns, providing further impetus for the development and applications of this green and renewable biomaterial to fabricate lightweight and biodegradable composites and aerogels. Surface functionalization of NCC remains the main focus of NCC research to tailor its properties for dispersion in hydrophilic or hydrophobic media. It is of uttermost importance to develop tools and protocols for imaging of NCC in a complex matrix and quantify its reinforcement effect.

  4. Twinning in nanocrystalline fcc and bcc metals

    NASA Astrophysics Data System (ADS)

    Boyko, Vladimir S.; Kezerashvili, Roman Ya.

    2013-03-01

    The deformation twinning in nanocrystalline (nc) face-centered cubic (fcc) metals, body-centered cubic (bcc) metals, and in nc Si is analyzed. The phenomenological approach is used to make a bridge between microscopical mechanisms of twin nucleation and macroscopical characteristics of twinning with different crystal structures and to calculate the grain size range of the twinning propensity, the requisite external stress for twinning propagation in nc polycrystals, and the grain size at which the slip begins to prevail over the twinning. The developed approach allows to derive analytical expressions and estimate lower and and upper limits of grain sizes at which a twinning propensity is occurred. Results of calculations for the nc fcc metals Al, Cu, Ni, Pd, Au, nc bcc metals Ta, Fe, Mo, W, Nb, and nc diamond-cubic Si are compared with the experimental data, otherwise predictions are made.

  5. Stabilizing Nanocrystalline Grains in Ceramic-Oxides

    SciTech Connect

    Aidhy, Dilpuneet S; Zhang, Yanwen; Weber, William J

    2013-01-01

    Nanocrystalline ceramic-oxides are prone to grain growth rendering their highly attractive properties practically unusable. Using atomistic simulations ofon ceria as a model material system, we elucidate a framework to design dopant-pinned grain boundaries that prevent this grain growth. While in metallic systems it has been shown that a large mismatch between host and dopant atomic size prevents grain growth, in ceramic-oxides we find that this concept is not applicable. Instead, we find that dopant-oxygen vacancy interaction, i.e., dopant migration energy in the presence of oxygen vacancy, and dopant-oxygen vacancy binding energy are the controlling factors in grain growth. Our prediction agrees with and explains previous experimental observations.

  6. Thermal Conductivity in Nanocrystalline Ceria Thin Films

    SciTech Connect

    Marat Khafizov; In-Wook Park; Aleksandr Chernatynskiy; Lingfeng He; Jianliang Lin; John J. Moore; David Swank; Thomas Lillo; Simon R. Phillpot; Anter El-Azab; David H. Hurley

    2014-02-01

    The thermal conductivity of nanocrystalline ceria films grown by unbalanced magnetron sputtering is determined as a function of temperature using laser-based modulated thermoreflectance. The films exhibit significantly reduced conductivity compared with stoichiometric bulk CeO2. A variety of microstructure imaging techniques including X-ray diffraction, scanning and transmission electron microscopy, X-ray photoelectron analysis, and electron energy loss spectroscopy indicate that the thermal conductivity is influenced by grain boundaries, dislocations, and oxygen vacancies. The temperature dependence of the thermal conductivity is analyzed using an analytical solution of the Boltzmann transport equation. The conclusion of this study is that oxygen vacancies pose a smaller impediment to thermal transport when they segregate along grain boundaries.

  7. Synthesis of non-stoichiometric nanocrystalline catalysts

    SciTech Connect

    Tschoepe, A.; Ying, J.Y.

    1995-12-01

    Nanocrystalline catalysts may be synthesized by inert gas condensation method with magnetron sputtering technique. The source material is sputtered in a low Ar pressure, and nanoclusters of similar composition as the source target are collected effectively on a liquid nitrogen cooled modified ground shield. We have generated Ce, La-Ce and Cu-Ce nanoclusters by this approach, and controlled oxidized them to derive non-stoichiometric oxide catalysts. Such novel catalysts are constituted of crystallites < 10 nm, with an ultrahigh surface-to-volume ratio. Multicomponent systems can also be synthesized with excellent homogeneity by this approach, compared to traditional chemical preparation methods. Finally, the significant non-stoichiometry in oxides provides a high concentration of oxygen vacancies and superoxide adsorbed species, which is particularly useful in catalytic redox reactions, such as SO{sub 2} reduction by CO and CO oxidation.

  8. Toughness and strength of nanocrystalline graphene

    DOE PAGES

    Shekhawat, Ashivni; Ritchie, Robert O.

    2016-01-28

    Pristine monocrystalline graphene is claimed to be the strongest material known with remarkable mechanical and electrical properties. However, graphene made with scalable fabrication techniques is polycrystalline and contains inherent nanoscale line and point defects—grain boundaries and grain-boundary triple junctions—that lead to significant statistical fluctuations in toughness and strength. These fluctuations become particularly pronounced for nanocrystalline graphene where the density of defects is high. Here we use large-scale simulation and continuum modelling to show that the statistical variation in toughness and strength can be understood with ‘weakest-link’ statistics. We develop the first statistical theory of toughness in polycrystalline graphene, and elucidatemore » the nanoscale origins of the grain-size dependence of its strength and toughness. Lastly, our results should lead to more reliable graphene device design, and provide a framework to interpret experimental results in a broad class of two-dimensional materials.« less

  9. Toughness and strength of nanocrystalline graphene

    SciTech Connect

    Shekhawat, Ashivni; Ritchie, Robert O.

    2016-01-28

    Pristine monocrystalline graphene is claimed to be the strongest material known with remarkable mechanical and electrical properties. However, graphene made with scalable fabrication techniques is polycrystalline and contains inherent nanoscale line and point defects—grain boundaries and grain-boundary triple junctions—that lead to significant statistical fluctuations in toughness and strength. These fluctuations become particularly pronounced for nanocrystalline graphene where the density of defects is high. Here we use large-scale simulation and continuum modelling to show that the statistical variation in toughness and strength can be understood with ‘weakest-link’ statistics. We develop the first statistical theory of toughness in polycrystalline graphene, and elucidate the nanoscale origins of the grain-size dependence of its strength and toughness. Lastly, our results should lead to more reliable graphene device design, and provide a framework to interpret experimental results in a broad class of two-dimensional materials.

  10. Furfural resin-based bio-nanocomposites reinforced by reactive nanocrystalline cellulose

    NASA Astrophysics Data System (ADS)

    Wang, C.; Sun, S.; Zhao, G.; He, B.; Xiao, H.

    2009-07-01

    The work presented herein has been focused on reinforcing the furfural resins (FA) by reactive-modified nanocrystalline cellulose (NCC) in an attempt to create a bio-nanocomposite completely based on natural resources. FA prepolymers were synthesized with an acid catalyst, and NCC was rendered reactive via the grafting of maleic anhydride (MAH). The resulting NCC and nanocomposites were characterized using TEM, SEM and FT-IR. It was found that NCC appeared to be spherical in shape with diameters under 100 nm. FT-IR confirmed that there were hydrogen and esterification bonding between MAH and NCC or FA prepolymer. After solidified with paratoluenesulfonic acid, NCC-reinforced FA resin composites showed granular cross-section while FA resin with layered structures. Mechanical property tests indicated that NCC-reinforced FA resin composites possessed the improved tensile and flexural strengths, in comparison with FA resin.

  11. Synthesis, structural and magnetic characterization of soft magnetic nanocrystalline ternary FeNiCo particles

    NASA Astrophysics Data System (ADS)

    Toparli, Cigdem; Ebin, Burçak; Gürmen, Sebahattin

    2017-02-01

    The present study focuses on the synthesis, microstructural and magnetic properties of ternary FeNiCo nanoparticles. Nanocrystalline ternary FeNiCo particles were synthesized via hydrogen reduction assisted ultrasonic spray pyrolysis method in single step. The effect of precursor concentration on the morphology and the size of particles was investigated. The syntheses were performed at 800 °C. Structure, morphology and magnetic properties of the as-prepared products were characterized through X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM) studies. Scherer calculation revealed that crystallite size of the ternary particles ranged between 36 and 60 nm. SEM and TEM investigations showed that the particle size was strongly influenced by the precursor concentration and Fe, Ni, Co elemental composition of individual particles was homogeneous. Finally, the soft magnetic properties of the particles were observed to be a function of their size.

  12. p-TYPE Nitrogen-Doped ZnO Microrods Preparation by Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Zahedi, F.; Dariani, R. S.; Rozati, S. M.

    2012-10-01

    Nitrogen doped ZnO films with different N/Zn atomic ratio have been prepared by spray pyrolysis technique on glass substrate at 500°C. N/Zn atomic ratio has been selected 0, 0.5, 1, 2 and 3. The effect of N/Zn ratio on structural, optical and electrical properties has been investigated. Hall effect measurement studies show that the conductivity type of the films is affected by N/Zn ratio. The conductivity type of films changes from n for N/Zn = 0 and 0.5 to p for N/Zn = 1 and 2. Further increasing in N/Zn to 3 again led to n-type conductivity. p-type ZnO:N microrods film prepared with N/Zn = 1 has highest carrier concentration (1.36 × 1016 cm-3) and lowest resistivity (628 Ω.cm). All films are polycrystalline with hexagonal wurtzite structure. (002) plane is preferential orientation for all films. Surface morphology changes from rods to grains by increasing in N/Zn ratio. Optical transmission of the films increases with increasing in N/Zn ratio. Photoluminescence spectra at room temperature show the ultraviolet emission and two visible emissions at 440 nm and 520 nm. X-ray photoelectron spectroscopy analysis confirms the incorporation of nitrogen in ZnO:N film with N/Zn = 1.

  13. High-throughput search of ternary chalcogenides for p-type transparent electrodes.

    PubMed

    Shi, Jingming; Cerqueira, Tiago F T; Cui, Wenwen; Nogueira, Fernando; Botti, Silvana; Marques, Miguel A L

    2017-03-07

    Delafossite crystals are fascinating ternary oxides that have demonstrated transparent conductivity and ambipolar doping. Here we use a high-throughput approach based on density functional theory to find delafossite and related layered phases of composition ABX2, where A and B are elements of the periodic table, and X is a chalcogen (O, S, Se, and Te). From the 15 624 compounds studied in the trigonal delafossite prototype structure, 285 are within 50 meV/atom from the convex hull of stability. These compounds are further investigated using global structural prediction methods to obtain their lowest-energy crystal structure. We find 79 systems not present in the materials project database that are thermodynamically stable and crystallize in the delafossite or in closely related structures. These novel phases are then characterized by calculating their band gaps and hole effective masses. This characterization unveils a large diversity of properties, ranging from normal metals, magnetic metals, and some candidate compounds for p-type transparent electrodes.

  14. Interstitial oxygen as a source of p-type conductivity in hexagonal manganites

    PubMed Central

    Skjærvø, Sandra H.; Wefring, Espen T.; Nesdal, Silje K.; Gaukås, Nikolai H.; Olsen, Gerhard H.; Glaum, Julia; Tybell, Thomas; Selbach, Sverre M.

    2016-01-01

    Hexagonal manganites, h-RMnO3 (R=Sc, Y, Ho–Lu), have been intensively studied for their multiferroic properties, magnetoelectric coupling, topological defects and electrically conducting domain walls. Although point defects strongly affect the conductivity of transition metal oxides, the defect chemistry of h-RMnO3 has received little attention. We use a combination of experiments and first principles electronic structure calculations to elucidate the effect of interstitial oxygen anions, Oi, on the electrical and structural properties of h-YMnO3. Enthalpy stabilized interstitial oxygen anions are shown to be the main source of p-type electronic conductivity, without reducing the spontaneous ferroelectric polarization. A low energy barrier interstitialcy mechanism is inferred from Density Functional Theory calculations to be the microscopic migration path of Oi. Since the Oi content governs the concentration of charge carrier holes, controlling the thermal and atmospheric history provides a simple and fully reversible way of tuning the electrical properties of h-RMnO3. PMID:27924812

  15. High performance p-type NiOx thin-film transistor by Sn doping

    NASA Astrophysics Data System (ADS)

    Lin, Tengda; Li, Xiuling; Jang, Jin

    2016-06-01

    Major obstacles towards power efficient complementary electronics employing oxide thin-film transistors (TFTs) lie in the lack of equivalent well performing p-channel devices. Here, we report a significant performance enhancement of solution-processed p-type nickel oxide (NiOx) TFTs by introducing Sn dopant. The Sn-doped NiOx (Sn-NiOx) TFTs annealed at 280 °C demonstrate substantially improved electrical performances with the increase in the on/off current ratio (Ion/Ioff) by ˜100 times, field-effect mobility (μlin) by ˜3 times, and the decrease in subthreshold swing by half, comparing with those of pristine NiOx TFTs. X-ray photoelectron spectroscopy and X-ray diffraction results confirm that Sn atoms tend to substitute Ni sites and induce more amorphous phase. A decrease in density of states in the gap of NiOx by Sn doping and the shift of Fermi level (EF) into the midgap lead to the improvements of TFT performances. As a result, Sn-NiOx can be a promising material for the next-generation, oxide-based electronics.

  16. Alteration of P-type calcium channel gating by the spider toxin omega-Aga-IVA.

    PubMed Central

    McDonough, S I; Mintz, I M; Bean, B P

    1997-01-01

    We studied the mechanism of inhibition of P-type calcium channels in rat cerebellar Purkinje neurons by the peptide toxin omega-Aga-IVA. Saturating concentrations of omega-Aga-IVA (> 50 nM) inhibited inward current carried by 2-5 mM Ba almost completely. However, outward current at depolarizations of > +60 mV, carried by internal Cs, was inhibited much less, as was the tail current after such depolarizations. omega-Aga-IVA shifted the midpoint of the tail current activation curve by about +50 mV and made the curve less steep. The inactivation curve was also shifted in the depolarized direction and was made less steep. With omega-Aga-IVA, channels activated more slowly and deactivated more quickly than in control. Trains of repeated large depolarizations relieved the inhibition of current (as tested with moderate depolarizations), probably reflecting the unbinding of toxin. The relief of inhibition was faster with increasing depolarization, but did not require internal permeant ions. We conclude that omega-Aga-IVA alters voltage-dependent gating by stabilizing closed states of the channel and that omega-Aga-IVA dissociates much more rapidly from open channels than from closed. PMID:9129813

  17. High-throughput search of ternary chalcogenides for p-type transparent electrodes

    NASA Astrophysics Data System (ADS)

    Shi, Jingming; Cerqueira, Tiago F. T.; Cui, Wenwen; Nogueira, Fernando; Botti, Silvana; Marques, Miguel A. L.

    2017-03-01

    Delafossite crystals are fascinating ternary oxides that have demonstrated transparent conductivity and ambipolar doping. Here we use a high-throughput approach based on density functional theory to find delafossite and related layered phases of composition ABX2, where A and B are elements of the periodic table, and X is a chalcogen (O, S, Se, and Te). From the 15 624 compounds studied in the trigonal delafossite prototype structure, 285 are within 50 meV/atom from the convex hull of stability. These compounds are further investigated using global structural prediction methods to obtain their lowest-energy crystal structure. We find 79 systems not present in the materials project database that are thermodynamically stable and crystallize in the delafossite or in closely related structures. These novel phases are then characterized by calculating their band gaps and hole effective masses. This characterization unveils a large diversity of properties, ranging from normal metals, magnetic metals, and some candidate compounds for p-type transparent electrodes.

  18. Quasiparticle band structures and thermoelectric transport properties of p-type SnSe

    SciTech Connect

    Shi, Guangsha; Kioupakis, Emmanouil

    2015-02-14

    We used density functional and many-body perturbation theory to calculate the quasiparticle band structures and electronic transport parameters of p-type SnSe both for the low-temperature Pnma and high-temperature Cmcm phases. The Pnma phase has an indirect band gap of 0.829 eV, while the Cmcm has a direct band gap of 0.464 eV. Both phases exhibit multiple local band extrema within an energy range comparable to the thermal energy of carriers from the global extrema. We calculated the electronic transport coefficients as a function of doping concentration and temperature for single-crystal and polycrystalline materials to understand the previous experimental measurements. The electronic transport coefficients are highly anisotropic and are strongly affected by bipolar transport effects at high temperature. Our results indicate that SnSe exhibits optimal thermoelectric performance at high temperature when doped in the 10{sup 19}–10{sup 20 }cm{sup −3} range.

  19. Growth of p-type ZnOS films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kobayashi, Kenkichiro; Ohtsuki, Tohru; Tomita, Yasumasa; Kohno, Yosiumi; Maeda, Yasuhisa; Matsushima, Shigenori

    2017-01-01

    ZnO1-xSx films were deposited on quartz substrates by pulsed laser deposition (PLD) of ZnO1-xSx targets. The ZnO1-xSx films with S-contents of 0.03-0.17 were grown from the ZnO1-xSx targets sulfured at temperatures of 200 and 500 °C. The resistivity of the ZnO1-xSx films is slightly increased with the S-content. An increase of the O2-partial pressure in an atmosphere reduces the S-content in the films and drastically enhances the resistivity of the films. However, the carrier type of the films is still n-type. In order to incorporate excess S atoms into films, evaporation of Sulfur was performed during the PLD process. As a temperature of the S-evaporation is raised, the resistivity of the films is significantly enhanced and hole-conductivity appears in the films grown by the S-evaporation at 80 and 90 °C. By X-ray photoelectron spectroscopic measurements, the presence of SOx species is confirmed for the p-type ZnO1-xSx film. Both interstitial SO3 or SO4 clusters and complexes of Zn-vacancy with H are considered to be appropriate acceptors responsible for the hole-conductivity at room temperature.

  20. High-throughput search of ternary chalcogenides for p-type transparent electrodes

    PubMed Central

    Shi, Jingming; Cerqueira, Tiago F. T.; Cui, Wenwen; Nogueira, Fernando; Botti, Silvana; Marques, Miguel A. L.

    2017-01-01

    Delafossite crystals are fascinating ternary oxides that have demonstrated transparent conductivity and ambipolar doping. Here we use a high-throughput approach based on density functional theory to find delafossite and related layered phases of composition ABX2, where A and B are elements of the periodic table, and X is a chalcogen (O, S, Se, and Te). From the 15 624 compounds studied in the trigonal delafossite prototype structure, 285 are within 50 meV/atom from the convex hull of stability. These compounds are further investigated using global structural prediction methods to obtain their lowest-energy crystal structure. We find 79 systems not present in the materials project database that are thermodynamically stable and crystallize in the delafossite or in closely related structures. These novel phases are then characterized by calculating their band gaps and hole effective masses. This characterization unveils a large diversity of properties, ranging from normal metals, magnetic metals, and some candidate compounds for p-type transparent electrodes. PMID:28266587

  1. P-type InGaAsP coolers for integrated optic devices

    NASA Astrophysics Data System (ADS)

    Vashaee, Daryoosh; LaBounty, Christopher J.; Fang, Xiaofeng; Zeng, Gehong; Abraham, Patrick; Bowers, John E.; Shakouri, Ali

    2001-05-01

    Single stage thin film coolers based on thermoelectric and thermionic cooling in p-type InGaAsP superlattice structures have been fabricated. Devices with different sizes and at various ambient temperatures have been characterized. Experimental results showed 0.5 degree centigrade cooling below the ambient temperature at 25C. This cooling over 1 4mu2m thick superlattice barrier corresponds to cooling power densities on the order of 200 W/cm2. The device cools by a factor of two better at higher temperatures (70C). This is due to the reduction of the superlattice thermal conductivity and the broadening of the electronic distribution function at higher temperatures. 150x150 micrometers 2 devices provide largest cooling at room temperature while the optimum device size shrinks as the temperature increases. Simulations results that take into account finite thermal resistance of the InP substrate, the effect of the contact resistance, heat generation in the wire-bonds and metallic pads on top of the device predict accurately the optimum cooling of these micro refrigerators. By eliminating the major parasitic sources of heating (Joule heating in the substrate, heat conduction through the side contact and reducing the contact resistance to 5x7-7 ohm-cm2) simulations show that, ultimately, one can achieve 15 degree(s)C cooling (10's of kW/cm2 cooling power) with single stage p-InGaAsP thin film coolers.

  2. Raman Spectroscopy Determination of Hole Concentration in p-Type GaSb

    SciTech Connect

    Maslar JE, Hurst WS, Wang CA

    2007-04-05

    Room temperature p-type GaSb bulk coupled mode spectra were measured as a function of hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode scattering than possible with visible wavelength excitation-based systems. A relatively simple spectral model for the electronic contribution to the dielectric function was evaluated for determination of hole concentration from the bulk coupled mode spectra. Optically-derived values for hole concentration were determined by minimizing the sum of the residuals squared between an experimental and simulated spectrum as a function of total hole concentration and a plasmon damping parameter. Hole concentrations obtained from the Raman spectroscopic measurements deviated from the values determined from single field Hall effect measurements that were corrected to account for two band conduction by {approx}20% to {approx}65%. These deviations were attributed to the limitations of the spectral model employed and uncertainties in GaSb materials properties.

  3. ZnTe Alloying Effect on Enhanced Thermoelectric Properties of p-Type PbTe.

    PubMed

    Ahn, Kyunghan; Shin, Hocheol; Im, Jino; Park, Sang Hyun; Chung, In

    2017-02-01

    We investigate the effect of ZnTe incorporation on PbTe to enhance thermoelectric performance. We report structural, microscopic, and spectroscopic characterizations, ab initio theoretical calculations, and thermoelectric transport properties of Pb0.985Na0.015Te-x% ZnTe (x = 0, 1, 2, 4). We find that the solid solubility limit of ZnTe in PbTe is less than 1 mol %. The introduction of 2% ZnTe in p-type Pb0.985Na0.015Te reduces the lattice thermal conductivity through the ZnTe precipitates at the microscale. Consequently, a maximum thermoelectric figure of merit (ZT) of 1.73 at 700 K is achieved for the spark plasma-sintered Pb0.985Na0.015Te-2% ZnTe, which arises from a decreased lattice thermal conductivity of ∼0.69 W m(-1) K(-1) at ∼700 K in comparison with Pb0.985Na0.015Te.

  4. Heavy hole effect on the thermoelectric properties of highly doped p-type lead telluride

    NASA Astrophysics Data System (ADS)

    Babenko, N. I.; Dmitriev, A. V.

    2017-01-01

    We study theoretically the thermoelectric properties of heavily doped p-type PbTe in the temperature interval of 300 to 900 K. In our calculations, we use the three-band model of PbTe electron energy spectrum that takes into account the heavy-hole Σ-band. On the base of the Boltzmann kinetic equation, the full set of the relevant kinetic characteristics is calculated including the electrical and thermal conductivities, the Seebeck coefficient, and the thermoelectric figure-of-merit. The thermoelectric characteristics appear to be very sensitive to parameters of the heavy hole band. The best fit with experiment was obtained at mh h=5 m0 and Eg Σ=0.5 eV. All calculated thermoelectric quantities then agree very well with the available experimental data. In particular, we were able to reproduce the significant increase of the figure-of-merit up to Z T ≈1.2 that was experimentally observed recently in heavily p-doped PbTe. Our results show that ZT maximum corresponds to the temperature wherein the light hole and heavy hole band edges coincide so that a prominent density-of-states singularity is formed in the valence band.

  5. Photoluminescence studies of compensated p-type ZnSe:N(P) under hydrostatic pressure

    NASA Astrophysics Data System (ADS)

    Kuskovsky, Igor; Neumark, G. F.; Tischler, J.; Iota, V.; Weinstein, B. A.

    2000-03-01

    It is well known that to this day p-type ZnSe, even with the best acceptor dopant, nitrogen, can not be doped higher than 10^18 cm-3, even with a 100% acceptor activation ratio. The knowledge of the defect structure of highly doped and compensated ZnSe:N can help to understand this limitation. We report here the results of PL studies done under hydrostatic pressure. We have found the presence of a resonant donor defect in heavily doped and compensated ZnSe:N; this donor has a level of ~20-140 meV above the conduction band edge at ambient pressure. The red-shifted donor-acceptor-pair photoluminescence observed in these samples is quenched by the resonant defect for pressures higher than ~25 kbar. A split N-N interstitial on a Se site is discussed as a reasonable candidate for such a defect. Auger recombination is proposed as a quenching mechanism. These findings are compared with earlier results on intermediately doped ZnSe:N, and with data on compensated ZnSe:P. We suggest that, for high doping, the similar PL quenching seen above ~30kbar in ZnSe:P could be due to an analogous donor defect. Two of the authors (IK & GFN) acknowledge support from DOE grant DE-FG02-98ER45694

  6. High-Performance p-Type Black Phosphorus Transistor with Scandium Contact.

    PubMed

    Li, Ling; Engel, Michael; Farmer, Damon B; Han, Shu-Jen; Wong, H-S Philip

    2016-04-26

    A record high current density of 580 μA/μm is achieved for long-channel, few-layer black phosphorus transistors with scandium contacts after 400 K vacuum annealing. The annealing effectively improves the on-state current and Ion/Ioff ratio by 1 order of magnitude and the subthreshold swing by ∼2.5×, whereas Al2O3 capping significantly degrades transistor performances, resulting in 5× lower on-state current and 3× lower Ion/Ioff ratio. The influences of moisture on black phosphorus metal contacts are elucidated by analyzing the hysteresis of 3-20 nm thick black phosphorus transistors with scandium and gold contacts under different conditions: as-fabricated, after vacuum annealing, and after Al2O3 capping. The optimal black phosphorus film thickness for transistors with scandium contacts is found to be ∼10 nm. Moreover, p-type performance is shown in all transistors with scandium contacts, suggesting that the Fermi level is pinned closer to the valence band regardless of the flake thickness.

  7. Observations of exciton and carrier spin relaxation in Be doped p-type GaAs

    SciTech Connect

    Asaka, Naohiro; Harasawa, Ryo; Tackeuchi, Atsushi; Lu, Shulong; Dai, Pan

    2014-03-17

    We have investigated the exciton and carrier spin relaxation in Be-doped p-type GaAs. Time-resolved spin-dependent photoluminescence (PL) measurements revealed spin relaxation behaviors between 10 and 100 K. Two PL peaks were observed at 1.511 eV (peak 1) and 1.497 eV (peak 2) at 10 K, and are attributed to the recombination of excitons bound to neutral Be acceptors (peak 1) and the band-to-acceptor transition (peak 2). The spin relaxation times of both PL peaks were measured to be 1.3–3.1 ns at 10–100 K, and found to originate from common electron spin relaxation. The observed existence of a carrier density dependence of the spin relaxation time at 10–77 K indicates that the Bir-Aronov-Pikus process is the dominant spin relaxation mechanism.

  8. Ferromagnetic ordering of Cr and Fe doped p-type diamond: An ab initio study

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2014-02-21

    Ferromagnetic ordering of transition metal dopants in semiconductors holds the prospect of combining the capabilities of semiconductors and magnetic systems in single hybrid devices for spintronic applications. Various semiconductors have so far been considered for spintronic applications, but low Curie temperatures have hindered room temperature applications. We report ab initio DFT calculations on the stability and magnetic properties of Fe and Cr impurities in diamond, and show that their ground state magnetic ordering and stabilization energies depend strongly on the charge state and type of co-doping. We predict that divacancy Cr{sup +2} and substitutional Fe{sup +1} order ferromagnetically in p-type diamond, with magnetic stabilization energies (and magnetic moment per impurity ion) of 16.9 meV (2.5 μ{sub B}) and 33.3 meV (1.0 μ{sub B}), respectively. These magnetic stabilization energies are much larger than what has been achieved in other semiconductors at comparable impurity concentrations, including the archetypal dilute magnetic semiconductor GaAs:Mn. In addition, substitutional Fe{sup +1} exhibits a strong half-metallic character, with the Fermi level crossing bands in only the spin down channel. These results, combined with diamond’s extreme properties, demonstrate that Cr or Fe dopedp-type diamond may successfully be considered in the search for room temperature spintronic materials.

  9. Ultrathin polytyramine films by electropolymerisation on highly doped p-type silicon electrodes

    NASA Astrophysics Data System (ADS)

    Losic, Dusan; Cole, Martin; Thissen, Helmut; Voelcker, Nicolas H.

    2005-06-01

    In recent years, silicon-based materials have been used extensively in device fabrication for sensors, microfluidic and biomaterial applications. In order to enhance the performance of the material, a number of surface functionalisations are employed. However, until now, silicon has not been used as an electrode material for electrodeposition of functional polymers. Here, highly doped p-type silicon was used as an electrode facilitating the electropolymerisation of ultrathin polytyramine (PT) films by cyclic voltammetry. The influence of resistivity, pre-treatment of the silicon surface and electrochemical conditions on the electropolymerisation process was studied. The results show that ultrathin PT films with a controlled thickness from 2 to 15 nm exhibit good electrochemical stability in buffer solution (pH 6.8) over a large potential window (-1.5 V to 1.5 V) and passivating properties towards a redox probe. In terms of the film morphology, a pinhole-free smooth surface with a roughness below 0.5 nm and with dominantly globular features of 40-60 nm diameter was observed by AFM. XPS characterisation showed that PT films display amine functional groups at the coating surface. UV induced silicon oxidation was used to prepare patterned PT films.

  10. Towards P-Type Conductivity in SnO2 Nanocrystals through Li Doping

    SciTech Connect

    Chaparadza, Allen; Rananavare, Shankar B

    2010-01-22

    This paper examines electrical transport properties and Li doping in SnO2 synthesized by the sol–gel method. Solid-state 7Li-NMR lineshapes reveal that Li ions occupy two distinct sites with differing dynamic mobilities. The chemical exchange rate between the two sites is, however, too slow for detection on the NMR timescale. Compressed nanoparticulate films of this doped semiconductor exhibit a positive Seebeck coefficient implying a p-type conductivity. A variable-temperature direct current conductivity, over a 25–350 °C temperature range, follows an Efros–Shklovskii variable range hopping (ES-VRH) conduction mechanism (ln(ρ) versus T -1/2) at temperatures below 100 °C with a crossover to 2D Mott variable range hopping (M-VRH) (ln(ρ) versus T -1/3) conduction at temperatures above 250 °C. In a transition region between these two limiting behaviors, the dc resistivity exhibits an anomalous temperature-independent plateau. We suggest that its origin may lie in a carrier inversion phenomenon wherein the majority carriers switch from holes to electrons due to Li ion expulsion from the crystalline core and creation of oxygen vacancies generated by loss of oxygen at elevated temperatures.

  11. P-type Planet–Planet Scattering: Kepler Close Binary Configurations

    NASA Astrophysics Data System (ADS)

    Gong, Yan-Xiang

    2017-01-01

    A hydrodynamical simulation shows that a circumbinary planet will migrate inward to the edge of the disk cavity. If multiple planets form in a circumbinary disk, successive migration will lead to planet–planet scattering (PPS). PPS of Kepler-like circumbinary planets is discussed in this paper. The aim of this paper is to answer how PPS affects the formation of these planets. We find that a close binary has a significant influence on the scattering process. If PPS occurs near the unstable boundary of a binary, about 10% of the systems can be completely destroyed after PPS. In more than 90% of the systems, there is only one planet left. Unlike the eccentricity distribution produced by PPS in a single star system, the surviving planets generally have low eccentricities if PPS take place near the location of the currently found circumbinary planets. In addition, the ejected planets are generally the innermost of two initial planets. The above results depend on the initial positions of the two planets. If the initial positions of the planets are moved away from the binary, the evolution tends toward statistics similar to those around single stars. In this process, the competition between the planet–planet force and the planet-binary force makes the eccentricity distribution of surviving planets diverse. These new features of P-type PPS will deepen our understanding of the formation of these circumbinary planets.

  12. Enhanced thermoelectric figure of merit of p-type half-Heuslers.

    PubMed

    Yan, Xiao; Joshi, Giri; Liu, Weishu; Lan, Yucheng; Wang, Hui; Lee, Sangyeop; Simonson, J W; Poon, S J; Tritt, T M; Chen, Gang; Ren, Z F

    2011-02-09

    Half-Heuslers would be important thermoelectric materials due to their high temperature stability and abundance if their dimensionless thermoelectric figure of merit (ZT) could be made high enough. The highest peak ZT of a p-type half-Heusler has been so far reported about 0.5 due to the high thermal conductivity. Through a nanocomposite approach using ball milling and hot pressing, we have achieved a peak ZT of 0.8 at 700 °C, which is about 60% higher than the best reported 0.5 and might be good enough for consideration for waste heat recovery in car exhaust systems. The improvement comes from a simultaneous increase in Seebeck coefficient and a significant decrease in thermal conductivity due to nanostructures. The samples were made by first forming alloyed ingots using arc melting and then creating nanopowders by ball milling the ingots and finally obtaining dense bulk by hot pressing. Further improvement in ZT is expected when average grain sizes are made smaller than 100 nm.

  13. Ferromagnetic ordering of Cr and Fe doped p-type diamond: An ab initio study

    NASA Astrophysics Data System (ADS)

    Benecha, E. M.; Lombardi, E. B.

    2014-02-01

    Ferromagnetic ordering of transition metal dopants in semiconductors holds the prospect of combining the capabilities of semiconductors and magnetic systems in single hybrid devices for spintronic applications. Various semiconductors have so far been considered for spintronic applications, but low Curie temperatures have hindered room temperature applications. We report ab initio DFT calculations on the stability and magnetic properties of Fe and Cr impurities in diamond, and show that their ground state magnetic ordering and stabilization energies depend strongly on the charge state and type of co-doping. We predict that divacancy Cr+2 and substitutional Fe+1 order ferromagnetically in p-type diamond, with magnetic stabilization energies (and magnetic moment per impurity ion) of 16.9 meV (2.5 μB) and 33.3 meV (1.0 μB), respectively. These magnetic stabilization energies are much larger than what has been achieved in other semiconductors at comparable impurity concentrations, including the archetypal dilute magnetic semiconductor GaAs:Mn. In addition, substitutional Fe+1 exhibits a strong half-metallic character, with the Fermi level crossing bands in only the spin down channel. These results, combined with diamond's extreme properties, demonstrate that Cr or Fe dopedp-type diamond may successfully be considered in the search for room temperature spintronic materials.

  14. Near Field Enhanced Photocurrent Generation in P-type Dye-Sensitized Solar Cells

    PubMed Central

    Xu, Xiaobao; Cui, Jin; Han, Junbo; Zhang, Junpei; Zhang, Yibo; Luan, Lin; Alemu, Getachew; Wang, Zhong; Shen, Yan; Xiong, Dehua; Chen, Wei; Wei, Zhanhua; Yang, Shihe; Hu, Bin; Cheng, Yibing; Wang, Mingkui

    2014-01-01

    Over the past few decades, the field of p-type dye-sensitized solar cell (p-DSSC) devices has undergone tremendous advances, in which Cu-based delafossite nanocrystal is of prime interest. This paper presents an augment of about 87% improvement in photocurrent observed in a particular configuration of organic dye P1 sensitized CuCrO2 delafossite nanocrystal electrode coupled with organic redox shuttle, 1-methy-1H- tetrazole-5-thiolate and its disulfide dimer when Au nanoparticles (NPs, with diameter of about 20 nm) is added into the photocathode, achieving a power convert efficiency of 0.31% (measured under standard AM 1.5 G test conditions). Detailed investigation shows that the local electrical-magnetic field effect, induced by Au NPs among the mesoporous CuCrO2 film, can improve the charge injection efficiency at dye/semiconductor interface, which is responsible for the bulk of the gain in photocurrent. PMID:24492539

  15. Accelerated light-induced degradation for detecting copper contamination in p-type silicon

    SciTech Connect

    Inglese, Alessandro Savin, Hele; Lindroos, Jeanette

    2015-08-03

    Copper is a harmful metal impurity that significantly impacts the performance of silicon-based devices if present in active regions. In this contribution, we propose a fast method consisting of simultaneous illumination and annealing for the detection of copper contamination in p-type silicon. Our results show that, within minutes, such method is capable of producing a significant reduction of the minority carrier lifetime. A spatial distribution map of copper contamination can then be obtained through the lifetime values measured before and after degradation. In order to separate the effect of the light-activated copper defects from the other metastable complexes in low resistivity Cz-silicon, we carried out a dark anneal at 200 °C, which is known to fully recover the boron-oxygen defect. Similar to the boron-oxygen behavior, we show that the dark anneal also recovers the copper defects. However, the recovery is only partial and it can be used to identify the possible presence of copper contamination.

  16. Plasmodium P-Type Cyclin CYC3 Modulates Endomitotic Growth during Oocyst Development in Mosquitoes.

    PubMed

    Roques, Magali; Wall, Richard J; Douglass, Alexander P; Ramaprasad, Abhinay; Ferguson, David J P; Kaindama, Mbinda L; Brusini, Lorenzo; Joshi, Nimitray; Rchiad, Zineb; Brady, Declan; Guttery, David S; Wheatley, Sally P; Yamano, Hiroyuki; Holder, Anthony A; Pain, Arnab; Wickstead, Bill; Tewari, Rita

    2015-11-01

    Cell-cycle progression and cell division in eukaryotes are governed in part by the cyclin family and their regulation of cyclin-dependent kinases (CDKs). Cyclins are very well characterised in model systems such as yeast and human cells, but surprisingly little is known about their number and role in Plasmodium, the unicellular protozoan parasite that causes malaria. Malaria parasite cell division and proliferation differs from that of many eukaryotes. During its life cycle it undergoes two types of mitosis: endomitosis in asexual stages and an extremely rapid mitotic process during male gametogenesis. Both schizogony (producing merozoites) in host liver and red blood cells, and sporogony (producing sporozoites) in the mosquito vector, are endomitotic with repeated nuclear replication, without chromosome condensation, before cell division. The role of specific cyclins during Plasmodium cell proliferation was unknown. We show here that the Plasmodium genome contains only three cyclin genes, representing an unusual repertoire of cyclin classes. Expression and reverse genetic analyses of the single Plant (P)-type cyclin, CYC3, in the rodent malaria parasite, Plasmodium berghei, revealed a cytoplasmic and nuclear location of the GFP-tagged protein throughout the lifecycle. Deletion of cyc3 resulted in defects in size, number and growth of oocysts, with abnormalities in budding and sporozoite formation. Furthermore, global transcript analysis of the cyc3-deleted and wild type parasites at gametocyte and ookinete stages identified differentially expressed genes required for signalling, invasion and oocyst development. Collectively these data suggest that cyc3 modulates oocyst endomitotic development in Plasmodium berghei.

  17. Interstitial oxygen as a source of p-type conductivity in hexagonal manganites

    NASA Astrophysics Data System (ADS)

    Skjærvø, Sandra H.; Wefring, Espen T.; Nesdal, Silje K.; Gaukås, Nikolai H.; Olsen, Gerhard H.; Glaum, Julia; Tybell, Thomas; Selbach, Sverre M.

    2016-12-01

    Hexagonal manganites, h-RMnO3 (R=Sc, Y, Ho-Lu), have been intensively studied for their multiferroic properties, magnetoelectric coupling, topological defects and electrically conducting domain walls. Although point defects strongly affect the conductivity of transition metal oxides, the defect chemistry of h-RMnO3 has received little attention. We use a combination of experiments and first principles electronic structure calculations to elucidate the effect of interstitial oxygen anions, Oi, on the electrical and structural properties of h-YMnO3. Enthalpy stabilized interstitial oxygen anions are shown to be the main source of p-type electronic conductivity, without reducing the spontaneous ferroelectric polarization. A low energy barrier interstitialcy mechanism is inferred from Density Functional Theory calculations to be the microscopic migration path of Oi. Since the Oi content governs the concentration of charge carrier holes, controlling the thermal and atmospheric history provides a simple and fully reversible way of tuning the electrical properties of h-RMnO3.

  18. SIM Lite Detection of Habitable Planets in P-Type Binary-Planetary Systems

    NASA Technical Reports Server (NTRS)

    Pan, Xiaopei; Shao, Michael; Shaklan, Stuart; Goullioud, Renaud

    2010-01-01

    Close binary stars like spectroscopic binaries create a completely different environment than single stars for the evolution of a protoplanetary disk. Dynamical interactions between one star and protoplanets in such systems provide more challenges for theorists to model giant planet migration and formation of multiple planets. For habitable planets the majority of host stars are in binary star systems. So far only a small amount of Jupiter-size planets have been discovered in binary stars, whose minimum separations are 20 AU and the median value is about 1000 AU (because of difficulties in radial velocity measurements). The SIM Lite mission, a space-based astrometric observatory, has a unique capability to detect habitable planets in binary star systems. This work analyzed responses of the optical system to the field stop for companion stars and demonstrated that SIM Lite can observe exoplanets in visual binaries with small angular separations. In particular we investigated the issues for the search for terrestrial planets in P-type binary-planetary systems, where the planets move around both stars in a relatively distant orbit.

  19. Growth of antimony doped P-type zinc oxide nanowires for optoelectronics

    DOEpatents

    Wang, Zhong Lin; Pradel, Ken

    2016-09-27

    In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (Zn(NO.sub.3).sub.2), hexamethylenetetramine (HMTA) and polyethylenemine (800 M.sub.w PEI) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (NaOH), glycolic acid (C.sub.2H.sub.4O.sub.3) and antimony acetate (Sb(CH.sub.3COO).sub.3) in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 .mu.m have grown from the ZnO seed layer.

  20. Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic

    SciTech Connect

    Verreck, Devin Groeseneken, Guido; Verhulst, Anne S.; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Sorée, Bart

    2014-12-15

    Complementary logic based on tunnel field-effect transistors (TFETs) would drastically reduce power consumption thanks to the TFET's potential to obtain a sub-60 mV/dec subthreshold swing (SS). However, p-type TFETs typically do not meet the performance of n-TFETs for direct bandgap III-V configurations. The p-TFET SS stays well above 60 mV/dec, due to the low density of states in the conduction band. We therefore propose a source configuration in which a highly doped region is maintained only near the tunnel junction. In the remaining part of the source, the hot carriers in the exponential tail of the Fermi-Dirac distribution are blocked by reducing the doping degeneracy, either with a source section with a lower doping concentration or with a heterostructure. We apply this concept to n-p-i-p configurations consisting of In{sub 0.53}Ga{sub 0.47}As and an InP-InAs heterostructure. 15-band quantum mechanical simulations predict that the configurations with our source design can obtain sub-60 mV/dec SS, with an on-current comparable to the conventional source design.

  1. Hydrogen generator

    SciTech Connect

    Adlhart, O. J.

    1985-04-23

    This disclosure relates to a replaceable cartridge hydrogen generator of the type which relies at least partially on the process of anodic corrosion to produce hydrogen. A drum contains a plurality of the cartridges.

  2. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

    PubMed

    Suja, Mohammad; Bashar, Sunayna B; Morshed, Muhammad M; Liu, Jianlin

    2015-04-29

    Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1.54 × 10(18) cm(-3), a low resistivity of 0.6 Ω cm, and a moderate mobility of 6.65 cm(2) V(-1) s(-1) at room temperature. Metal oxide semiconductor capacitor devices have been fabricated on the Cu-doped ZnO films, and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as X-ray diffraction, X-ray photoelectron, Raman, and absorption spectroscopies are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO.

  3. Grain size dependent mechanical properties of nanocrystalline diamond films grown by hot-filament CVD

    SciTech Connect

    Wiora, M; Bruehne, K; Floeter, A; Gluche, P; Willey, T M; Kucheyev, S O; Van Buuren, A W; Hamza, A V; Biener, J; Fecht, H

    2008-08-01

    Nanocrystalline diamond (NCD) films with a thickness of {approx}6 {micro}m and with average grain sizes ranging from 60 to 9 nm were deposited on silicon wafers using a hot-filament chemical vapor deposition (HFCVD) process. These samples were then characterized with the goal to identify correlations between grain size, chemical composition and mechanical properties. The characterization reveals that our films are phase pure and exhibit a relatively smooth surface morphology. The levels of sp{sup 2}-bonded carbon and hydrogen impurities are low, and showed a systematic variation with the grain size. The hydrogen content increases with decreasing grain size, whereas the sp{sup 2} carbon content decreases with decreasing grain size. The material is weaker than single crystalline diamond, and both stiffness and hardness decrease with decreasing grain size. These trends suggest gradual changes of the nature of the grain boundaries, from graphitic in the case of the 60 nm grain size material to hydrogen terminated sp{sup 3} carbon for the 9 nm grain size material. The films exhibit low levels of internal stress and freestanding structures with a length of several centimeters could be fabricated without noticeable bending.

  4. Hydrogen Generator

    NASA Technical Reports Server (NTRS)

    1983-01-01

    A unit for producing hydrogen on site is used by a New Jersey Electric Company. The hydrogen is used as a coolant for the station's large generator; on-site production eliminates the need for weekly hydrogen deliveries. High purity hydrogen is generated by water electrolysis. The electrolyte is solid plastic and the control system is electronic. The technology was originally developed for the Gemini spacecraft.

  5. Discovering a Defect that Imposes a Limit to Mg Doping in p-TypeGaN

    SciTech Connect

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; O'Keefe, M.A.

    2006-07-20

    Gallium nitride (GaN) is the III-V semiconductor used to produce blue light-emitting diodes (LEDs) and blue and ultraviolet solid-state lasers. To be useful in electronic devices, GaN must be doped with elements that function either as electron donors or as acceptors to turn it into either an n-type semiconductor or a p-type semiconductor. It has been found that GaN can easily be grown with n-conductivity, even up to large concentrations of donors--in the few 10{sup 19}cm{sup -3} range. However, p-doping, the doping of the structure with atoms that provide electron sinks or holes, is not well understood and remains extremely difficult. The only efficient p-type dopant is Mg, but it is found that the free hole concentration is limited to 2 x 10{sup 18}cm{sup -3}, even when Mg concentrations are pushed into the low 10{sup 19}cm{sup -3} range. This saturation effect could place a limit on further development of GaN based devices. Further increase of the Mg concentration, up to 1 x 10{sup 20}cm{sup -3} leads to a decrease of the free hole concentration and an increase in defects. While low- to medium-brightness GaN light-emitting diodes (LEDs) are remarkably tolerant of crystal defects, blue and UV GaN lasers are much less so. We used electron microscopy to investigate Mg doping in GaN. Our transmission electron microscopy (TEM) studies revealed the formation of different types of Mg-rich defects [1,2]. In particular, high-resolution TEM allowed us to characterize a completely new type of defect in Mg-rich GaN. We found that the type of defect depended strongly on crystal growth polarity. For crystals grown with N-polarity, planar defects are distributed at equal distances (20 unit cells of GaN); these defects can be described as inversion domains [1]. For growth with Ga-polarity, we found a different type of defect [2]. These defects turn out to be three-dimensional Mg-rich hexagonal pyramids (or trapezoids) with their base on the (0001) plane and their six walls

  6. Inkjet Printing NiO-Based p-Type Dye-Sensitized Solar Cells.

    PubMed

    Brisse, R; Faddoul, R; Bourgeteau, T; Tondelier, D; Leroy, J; Campidelli, S; Berthelot, T; Geffroy, B; Jousselme, B

    2017-01-25

    Fabrication at low cost of transparent p-type semiconductors with suitable electronic properties is essential toward the scalability of many electronic devices, especially for photovoltaic and photocatalytic applications. In this context, the synthesis of mesoporous NiO films through inkjet printing of a sol-gel ink was investigated for the first time. Nickel chloride and Pluronic F-127, used as nickel oxide precursor and pore-forming agent, respectively, were formulated in a water/ethanol mixture to prepare a jettable ink for Dimatix printer. Multilayer NiO films were formed, and different morphologies could be obtained by playing on the interlayer thermal treatment. At low temperature (30 °C), a porous nanoparticulate-nanofiber dual-pore structure was observed. On the other hand, with a high temperature treatment (450 °C), nanoparticulate denser films without any dual structure were obtained. The mechanism for NiO formation during the final sintering step, investigated by means of X-ray photolectron spectroscopy, shows that a Ni(OH)2 species is an intermediate between NiCl2 and NiO. The different morphologies and thicknesses of the NiO films were correlated to their performance in a p-DSSC configuration, using a new push-pull dye (so-called "RBG-174") and an iodine-based electrolyte. Moreover, the positive impact of a nanometric NiOx layer deposited by spin-coating and introduced between FTO and the NiO mesoporous network is highlighted in the present work. The best results were obtained with NiOx/four layer-NiO mesoporous photocathodes of 860 nm, with a current density at the short circuit of 3.42 mA cm(-2) (irradiance of 100 mW cm(-2) spectroscopically distributed following AM 1.5).

  7. PAA1, a P-Type ATPase of Arabidopsis, Functions in Copper Transport in Chloroplasts

    PubMed Central

    Shikanai, Toshiharu; Müller-Moulé, Patricia; Munekage, Yuri; Niyogi, Krishna K.; Pilon, Marinus

    2003-01-01

    Copper (Cu) is an essential trace element with important roles as a cofactor in many plant functions, including photosynthesis. However, free Cu ions can cause toxicity, necessitating precise Cu delivery systems. Relatively little is known about Cu transport in plant cells, and no components of the Cu transport machinery in chloroplasts have been identified previously. Cu transport into chloroplasts provides the cofactor for the stromal enzyme copper/zinc superoxide dismutase (Cu/ZnSOD) and for the thylakoid lumen protein plastocyanin, which functions in photosynthetic electron transport from the cytochrome b6f complex to photosystem I. Here, we characterized six Arabidopsis mutants that are defective in the PAA1 gene, which encodes a member of the metal-transporting P-type ATPase family with a functional N-terminal chloroplast transit peptide. paa1 mutants exhibited a high-chlorophyll-fluorescence phenotype as a result of an impairment of photosynthetic electron transport that could be ascribed to decreased levels of holoplastocyanin. The paa1-1 mutant had a lower chloroplast Cu content, despite having wild-type levels in leaves. The electron transport defect of paa1 mutants was evident on medium containing <1 μM Cu, but it was suppressed by the addition of 10 μM Cu. Chloroplastic Cu/ZnSOD activity also was reduced in paa1 mutants, suggesting that PAA1 mediates Cu transfer across the plastid envelope. Thus, PAA1 is a critical component of a Cu transport system in chloroplasts responsible for cofactor delivery to plastocyanin and Cu/ZnSOD. PMID:12782727

  8. Hydrogen Production

    SciTech Connect

    2014-09-01

    This 2-page fact sheet provides a brief introduction to hydrogen production technologies. Intended for a non-technical audience, it explains how different resources and processes can be used to produce hydrogen. It includes an overview of research goals as well as “quick facts” about hydrogen energy resources and production technologies.

  9. Hydrogen Storage

    SciTech Connect

    2008-11-01

    This 2-page fact sheet provides a brief introduction to hydrogen storage technologies. Intended for a non-technical audience, it explains the different ways in which hydrogen can be stored, as well as the technical challenges and research goals for storing hydrogen on board a vehicle.

  10. Characterization of Nanocrystalline Aluminum Alloy 5083 Powders Produced by Cryogenic Attrition

    DTIC Science & Technology

    2014-11-01

    Characterization of Nanocrystalline Aluminum Alloy 5083 Powders Produced by Cryogenic Attrition by Tiffany Ngo ARL-TN-0643...November 2014 Characterization of Nanocrystalline Aluminum Alloy 5083 Powders Produced by Cryogenic Attrition Tiffany Ngo Weapons and...3. DATES COVERED (From - To) August 2014 4. TITLE AND SUBTITLE Characterization of Nanocrystalline Aluminum Alloy 5083 Powders Produced by

  11. Nanocrystalline particle coatings on alpha-alumina powders by a carbonate precipitation and thermal-assisted combustion route.

    PubMed

    Kim, Sang Woo; Jung, Young Mi

    2007-11-01

    We have suggested ultrafine particle coating processes for preparing nanocrystalline particle coated alpha-alumina powders by a carbonate precipitation and thermal-assisted combustion route, which is environmentally friendly. The nanometric ammonium aluminum carbonate hydroxide (AACH) as a precursor for coating of alumina was produced from precipitation reaction of ammonium aluminum sulfate and ammonium hydrogen carbonate. The synthetic crystalline size and morphology were greatly dependent on pH and temperature. By adding ammonium aluminum sulfate solution dispersed the alpha-alumina core particle in the ammonium hydrogen carbonate aqueous solution, nanometric AACH with a size of 5 nm was tightly bonded and uniformly coated on the core powder due to formation of surface complexes by the adsorption of carbonates, hydroxyl and ammonia groups on the surface of aluminum oxide. The synthetic precursor rapidly converted to amorphous- and y-alumina phase without significant change in the morphological features through decomposition of surface complexes and thermal-assisted phase transformation. As a result, the nanocrystalline polymorphic particle coated alpha-alumina core powders with highly uniform distribution were prepared from the route of carbonate precipitation and thermal-assisted combustion.

  12. Growth and conduction mechanism of As-doped p-type ZnO thin films deposited by MOCVD

    SciTech Connect

    Ma, Y.; Gao, Q.; Wu, G.G.; Li, W.C.; Gao, F.B.; Yin, J.Z.; Zhang, B.L.; Du, G.T.

    2013-03-15

    Highlight: ► P-type As-doped ZnO thin films was fabricated by MOCVD after post-growth annealing. ► The formation mechanism of p-ZnO with high hole concentration above 10{sup 19} cm{sup −3} was elucidated. ► Besides As{sub Zn}–2V{sub Zn} complex, C impurities also played an important role in realizing p-ZnO. ► The formations of As{sub O} and O-C-O complex were partially contributed to the p-type ZnO: As films. - Abstract: As-doped p-type ZnO thin films were fabricated by metal organic chemical vapor deposition (MOCVD) after in situ annealing in a vacuum. The p-type conduction mechanism was suggested by the analysis of X-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy. It was found that most of the As dopants in p-ZnO thin films formed As{sub Zn}–2V{sub Zn} shallow acceptor complex, simultaneously, carbon impurities also played an important role in realizing p-type conductivity in ZnO. Substitutional carbon on oxygen site created passivated defect bands by combining with Ga atoms due to the donor-acceptor pair Coulomb binding, which shifted the valence-band maximum upwards for ZnO and thus increased the hole concentration.

  13. Photoluminescence study of p-type vs. n-type Ag-doped ZnO films

    SciTech Connect

    Myers, M. A.; Jian, J.; Khranovskyy, V.; Lee, J. H.; Wang, Han; Wang, Haiyan E-mail: hwang00@tamu.edu

    2015-08-14

    Silver doped ZnO films have been grown on sapphire (0001) substrates by pulsed laser deposition. Hall measurements indicate that p-type conductivity is realized for the films deposited at 500 °C and 750 °C. Transmission electron microscopy images show more obvious and higher density of stacking faults (SFs) present in the p-type ZnO films as compared to the n-type films. Top view and cross sectional photoluminescence of the n- and p-type samples revealed free excitonic emission from both films. A peak at 3.314 eV, attributed to SF emission, has been observed only for the n-type sample, while a weak neutral acceptor peak observed at 3.359 eV in the p-type film. The SF emission in the n-type sample suggests localization of acceptor impurities nearby the SFs, while lack of SF emission for the p-type sample indicates the activation of the Ag acceptors in ZnO.

  14. Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

    NASA Astrophysics Data System (ADS)

    Sun, Chang; Nguyen, Hieu T.; Rougieux, Fiacre E.; Macdonald, Daniel

    2017-02-01

    Photoluminescence (PL) images and micro-PL maps were taken on Cu- or Ni-doped monocrystalline silicon wafers, to investigate the distribution of the metal precipitates. Several n-type and p-type wafers were used in which Cu or Ni were introduced in the starting melt of the ingots and precipitated during the ingot cooling (as opposed to surface contamination). The micro-PL mapping allowed investigation of the metal precipitates with a higher spatial resolution. Markedly different precipitation patterns were observed in n- and p-type samples: in both Cu- and Ni-doped n-type samples, circular central regions and edge regions were observed. In these regions, particles were distributed randomly and homogeneously. In the p-type Cu-doped and Ni-doped samples, by contrast, the precipitates occurred in lines along <110> orientations. The difference in the precipitation behaviour in n- and p-type samples is conjectured to be caused by different concentrations of self-interstitials and vacancies remaining in the crystal during the ingot cooling: there are more vacancies in the n-type ingots but more interstitials in the p-type ingots. The dopant effects on the intrinsic point defect concentrations in silicon crystals and possible precipitation mechanisms are discussed based on the findings in this work and the literature.

  15. Nanocrystallized Cu2Se grown on electroless Cu coated p-type Si using electrochemical atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Lu; He, Wenya; Chen, Xiang-yu; Du, Yi; Zhang, Xin; Shen, Yehua; Yang, Fengchun

    2015-01-01

    Cuprous selenide (Cu2Se) nanocrystalline thin films are grown onto electroless Cu coating on p-Si (100) substrates using electrochemical atomic layer deposition (EC-ALD), which includes alternate electrodeposition of Cu and Se atomic layers. The obtained films were characterized by X-ray diffraction (XRD), field emission scanning electronic microscopy (FE-SEM), FTIR, and open-circuit potential (OCP) studies. The results show the higher quality and good photoelectric properties of the Cu2Se film, suggesting that the combination of electroless coating and EC-ALD is an ideal method for deposition of compound semiconductor films on p-Si.

  16. Studies on electrochemically constructed n- and p-type photoelectrodes for use in solar energy conversion

    NASA Astrophysics Data System (ADS)

    Kang, Donghyeon

    Among several pathways to harvest solar energy, solar water splitting is one of the most efficient methods to convert solar light to hydrogen, which is a clean and easy to store chemical that has the potential to be used as a fuel source. Solar water splitting can be achieved primarily by photoelectrochemical cells (PECs), which utilize semiconductors as photoelectrodes for the water splitting reaction. Photoelectrodes play the crucial role of generating hydrogen but, to date, very few photoelectrodes have been developed that can produce hydrogen in a stable and efficient manner. Thus, development and modification of efficient, stable photoelectrodes are highly desirable to improve performance of solar water splitting PECs. This dissertation demonstrates the development of semiconductors as photoelectrodes and their modifications to advance solar energy conversion performance by newly established electrochemical synthetic routes. To improve the photoelectrochemical performance of photoelectrodes, various strategies were introduced, such as, morphology control, extrinsic doping, and the integration of catalysts. After successfully demonstrating the electrochemical synthesis of photoelectrodes, photoelectrochemical and electrochemical properties of electrodeposited photoelectrodes in PECs are discussed. The chapters can be categorized into three major themes. The first theme is the preparation of Bi-based photoanodes for the water oxidation reaction. Chapter 2 presents a study of Mo-doping into the BiVO4 photoanode to enhance charge separation properties. After Mo-doping was achieved successfully, a FeOOH oxygen evoltuion catalyst was integrated into the Mo-doped BiVO 4 photoanode to increase the water oxidation performance. Chapter 3 introduces another electrochemical synthesis method to control the morphology of Bi-based oxide photoanode materials. The second theme of this dissertation is the preparation of photocathode materials for the water reduction reaction

  17. Influence of particle size on H2 and H2S sensing characteristics of nanocrystalline zinc ferrite

    NASA Astrophysics Data System (ADS)

    Ghosh, P.; Das, M. R.; Mitra, P.

    2016-12-01

    Nanocrystalline zinc ferrite ZnFe2O4 was synthesized by sol-gel self-combustion technique. Ball milling at room temperature was carried out to control the particle size. Characterization of synthesized powders was made using X-ray diffraction and transmission electron microscopy analysis. Fine powders resulted from milling were used to prepare gas sensing elements in pellet form. The gas-sensing properties were studied in presence of hydrogen and hydrogen sulphide as test gases. The gas response behavior was found to be strongly influenced by the particle size. Significantly high sensitivity of 82 % was found for 7 nm zinc ferrite in presence of 200 ppm H2S at an operating temperature of 150 °C. Sensitivity was found to increase with temperature before being maximum at a particular operating temperature.

  18. P-type doping of GaN(000\\bar{1}) by magnesium ion implantation

    NASA Astrophysics Data System (ADS)

    Narita, Tetsuo; Kachi, Tetsu; Kataoka, Keita; Uesugi, Tsutomu

    2017-01-01

    Magnesium ion implantation has been performed on a GaN(000\\bar{1}) substrate, whose surface has a high thermal stability, thus allowing postimplantation annealing without the use of a protective layer. The current-voltage characteristics of p-n diodes fabricated on GaN(000\\bar{1}) showed distinct rectification at a turn-on voltage of about 3 V, although the leakage current varied widely among the diodes. Coimplantation with magnesium and hydrogen ions effectively suppressed the leakage currents and device-to-device variations. In addition, an electroluminescence band was observed at wavelengths shorter than 450 nm for these diodes. These results provide strong evidence that implanted magnesium ions create acceptors in GaN(000\\bar{1}).

  19. Hydrogenation apparatus

    DOEpatents

    Friedman, J.; Oberg, C. L.; Russell, L. H.

    1981-06-23

    Hydrogenation reaction apparatus is described comprising a housing having walls which define a reaction zone and conduits for introducing streams of hydrogen and oxygen into the reaction zone, the oxygen being introduced into a central portion of the hydrogen stream to maintain a boundary layer of hydrogen along the walls of the reaction zone. A portion of the hydrogen and all of the oxygen react to produce a heated gas stream having a temperature within the range of from 1,100 to 1,900 C, while the boundary layer of hydrogen maintains the wall temperature at a substantially lower temperature. The heated gas stream is introduced into a hydrogenation reaction zone and provides the source of heat and hydrogen for a hydrogenation reaction. There also is provided means for quenching the products of the hydrogenation reaction. The present invention is particularly suitable for the hydrogenation of low-value solid carbonaceous materials to provide high yields of more valuable liquid and gaseous products. 2 figs.

  20. Synergistic strengthening effect of nanocrystalline copper reinforced with carbon nanotubes.

    PubMed

    Wang, Hu; Zhang, Zhao-Hui; Hu, Zheng-Yang; Wang, Fu-Chi; Li, Sheng-Lin; Korznikov, Elena; Zhao, Xiu-Chen; Liu, Ying; Liu, Zhen-Feng; Kang, Zhe

    2016-05-17

    In this study, a novel multi-walled carbon nanotubes reinforced nanocrystalline copper matrix composite with super high strength and moderate plasticity was synthesized. We successfully overcome the agglomeration problem of the carbon nanotubes and the grain growth problem of the nanocrystalline copper matrix by combined use of the electroless deposition and spark plasma sintering methods. The yield strength of the composite reach up to 692 MPa, which is increased by 2 and 5 times comparing with those of the nanocrystalline and coarse copper, respectively. Simultaneously, the plasticity of the composite was also significantly increased in contrast with that of the nanocrystalline copper. The increase of the density of the carbon nanotubes after coating, the isolation effect caused by the copper coating, and the improvement of the compatibility between the reinforcements and matrix as well as the effective control of the grain growth of the copper matrix all contribute to improving the mechanical properties of the composite. In addition, a new strengthening mechanism, i.e., the series-connection effect of the nanocrystalline copper grains introduced by carbon nanotubes, is proposed to further explain the mechanical behavior of the nanocomposite.

  1. Interaction between a bisphosphonate, tiludronate, and biomimetic nanocrystalline apatites.

    PubMed

    Pascaud, Patricia; Gras, Pierre; Coppel, Yannick; Rey, Christian; Sarda, Stéphanie

    2013-02-19

    Bisphosphonates (BPs) are well established as successful antiresorptive agents for the prevention and treatment of bone diseases such as osteoporosis and Paget's disease. The aim of this work was to clarify the reaction mechanisms between a BP molecule, tiludronate, and the nanocrystalline apatite surface. The adsorption of tiludronate on well-characterized synthetic biomimetic nanocrystalline apatites with homogeneous but different compositions and surface characteristics was investigated to determine the effect of the nanocrystalline apatite substrate on the adsorption behavior. The results show that the adsorption of tiludronate on nanocrystalline biomimetic apatite surfaces varies over a large range. The most immature apatitic samples exhibited the highest affinity and the greatest amount adsorbed at saturation. Maturation of the nanocrystals induces a decrease of these values. The amount of phosphate ion released per adsorbed BP molecule varied, depending on the nanocrystalline substrate considered. The adsorption mechanism, although associated with a release of phosphate ions, cannot be considered as a simple ion exchange process involving one or two phosphate ions on the surface. A two-step process is proposed consisting of a surface binding of BP groups to calcium ions associated with a proton release inducing the protonation of surface orthophosphate ions and their eventual solubilization.

  2. Synergistic strengthening effect of nanocrystalline copper reinforced with carbon nanotubes

    PubMed Central

    Wang, Hu; Zhang, Zhao-Hui; Hu, Zheng-Yang; Wang, Fu-Chi; Li, Sheng-Lin; Korznikov, Elena; Zhao, Xiu-Chen; Liu, Ying; Liu, Zhen-Feng; Kang, Zhe

    2016-01-01

    In this study, a novel multi-walled carbon nanotubes reinforced nanocrystalline copper matrix composite with super high strength and moderate plasticity was synthesized. We successfully overcome the agglomeration problem of the carbon nanotubes and the grain growth problem of the nanocrystalline copper matrix by combined use of the electroless deposition and spark plasma sintering methods. The yield strength of the composite reach up to 692 MPa, which is increased by 2 and 5 times comparing with those of the nanocrystalline and coarse copper, respectively. Simultaneously, the plasticity of the composite was also significantly increased in contrast with that of the nanocrystalline copper. The increase of the density of the carbon nanotubes after coating, the isolation effect caused by the copper coating, and the improvement of the compatibility between the reinforcements and matrix as well as the effective control of the grain growth of the copper matrix all contribute to improving the mechanical properties of the composite. In addition, a new strengthening mechanism, i.e., the series-connection effect of the nanocrystalline copper grains introduced by carbon nanotubes, is proposed to further explain the mechanical behavior of the nanocomposite. PMID:27185503

  3. Synergistic strengthening effect of nanocrystalline copper reinforced with carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Wang, Hu; Zhang, Zhao-Hui; Hu, Zheng-Yang; Wang, Fu-Chi; Li, Sheng-Lin; Korznikov, Elena; Zhao, Xiu-Chen; Liu, Ying; Liu, Zhen-Feng; Kang, Zhe

    2016-05-01

    In this study, a novel multi-walled carbon nanotubes reinforced nanocrystalline copper matrix composite with super high strength and moderate plasticity was synthesized. We successfully overcome the agglomeration problem of the carbon nanotubes and the grain growth problem of the nanocrystalline copper matrix by combined use of the electroless deposition and spark plasma sintering methods. The yield strength of the composite reach up to 692 MPa, which is increased by 2 and 5 times comparing with those of the nanocrystalline and coarse copper, respectively. Simultaneously, the plasticity of the composite was also significantly increased in contrast with that of the nanocrystalline copper. The increase of the density of the carbon nanotubes after coating, the isolation effect caused by the copper coating, and the improvement of the compatibility between the reinforcements and matrix as well as the effective control of the grain growth of the copper matrix all contribute to improving the mechanical properties of the composite. In addition, a new strengthening mechanism, i.e., the series-connection effect of the nanocrystalline copper grains introduced by carbon nanotubes, is proposed to further explain the mechanical behavior of the nanocomposite.

  4. Fabrication of p-type ZnO nanofibers by electrospinning for field-effect and rectifying devices

    SciTech Connect

    Liu, Shuai; Liu, Shu-Liang; Liu, Ling-Zhi; Liu, Yi-Chen; Long, Yun-Ze; Zhang, Hong-Di; Zhang, Jun-Cheng; Han, Wen-Peng

    2014-01-27

    Ce-doped p-type ZnO nanofibers were synthesized by electrospinning and followed calcinations. The surface morphology, elementary composition, and crystal structure of the nanofibers were investigated. The field effect curve confirms that the resultant Ce-doped ZnO nanofibers are p-type semiconductor. A p-n heterojunction device consisting of Ce-doped p-type ZnO nanofibers and n-type indium tin oxide (ITO) thin film was fabricated on a piece of quartz substrate. The current-voltage (I-V) characteristic of the p-n heterojunction device shows typical rectifying diode behavior. The turn-on voltage appears at about 7 V under the forward bias and the reverse current is impassable.

  5. Modeling of normal incidence absorption in p-type GaAs/AlGaAs quantum well infrared detectors

    NASA Astrophysics Data System (ADS)

    Brown, Gail J.; Szmulowicz, Frank

    1995-04-01

    The absorption of infrared radiation at normal incidence in p-type GaAs/AlGaAs quantum wells, unlike in n-type, is fundamentally allowed. We have measured and theoretically modeled the bound-to-continuum absorption in these p-type materials. The infrared absorption coefficient was calculated are based on the electronic structure, wave functions and optical matrix elements obtained from an 8 X 8 envelope-function approximation (EFA) calculation. The 8 X 8 EFA Hamiltonian incorporates the coupling between the heavy, light, spin-orbit, and conduction bands. In calculating the continuum states for bound-to- continuum intersubband absorption, we do not enclose the well in an artificial box with infinite walls. A comparison of the theoretical absorption and measured photoresponse results verified the accuracy of our model and provided a basis for optimizing the design of p-type quantum wells for infrared detection.

  6. Contact printing of horizontally-aligned p-type Zn₃P₂ nanowire arrays for rigid and flexible photodetectors.

    PubMed

    Yu, Gang; Liang, Bo; Huang, Hongtao; Chen, Gui; Liu, Zhe; Chen, Di; Shen, Guozhen

    2013-03-08

    Zn(3)P(2) is an important p-type semiconductor with the ability to detect almost all visible and ultraviolet light. By using the simple and efficient contact printing process, we reported the assembly of horizontally-aligned p-type Zn(3)P(2) nanowire arrays to be used as building blocks for high performance photodetectors. Horizontally-aligned Zn(3)P(2) nanowire arrays were first printed on silicon substrate to make thin-film transistors, exhibiting typical p-type transistor behavior with a high on/off ratio of 10(3). Besides, the Zn(3)P(2) nanowire array based devices showed a substantial response to illuminated lights with a wide range of wavelengths and densities. Flexible photodetectors were also fabricated by contact printing of horizontally-aligned Zn(3)P(2) nanowire arrays on flexible PET substrate, showing a comparable performance to the device on rigid silicon substrate.

  7. Optical and electronic transport properties of p-type CuCoO2 transparent conductive oxide

    NASA Astrophysics Data System (ADS)

    Ruttanapun, Chesta; Sa-nguan-cheep, Minraya; Kahatta, Sagulthai; Buranasiri, Prathan; Jindajitawat, Phumin

    2013-06-01

    The CuCoO2 sample has been synthesized by a conventional solid-state reaction method to investigate electronic transport and optical properties for p-type transparent conducting oxide materials. The crystal structure was characterized by XRD. The Seebeck coefficient and electrical conductivity were measured in the high temperature. The UV-VIS-NIR and FTIR spectra were analyzed at room temperature. The XRD peaks confirm the samples forming the delafossite structure phase. The Seebeck coefficient sign confirms the samples displays the p-type conducting. The electronic transport energy for activating free carrier production and conduction contain 0.276 eV and 0.131 eV, respectively. The optical direct gap is 3.65 eV which is a visible-transparent oxide material. These results support that the CuCoO2 oxide compound is p-type transparent conducting oxide materials.

  8. Computational prediction of high thermoelectric performance in p-type half-Heusler compounds with low band effective mass.

    PubMed

    Fang, Teng; Zheng, Shuqi; Zhou, Tian; Yan, Lei; Zhang, Peng

    2017-02-08

    Half-Heusler (HH) compounds are important high temperature thermoelectric (TE) materials and have gained ever-increasing popularity. In recent years, p-type FeNbSb-based heavy-band HH compounds have attracted considerable attention with the record-high zT value of 1.5. Here, we use first-principles based methods to predict a very high zT value of 1.54 at 1200 K in p-type RuTaSb alloys. The high band degeneracy and low band effective mass contribute to a high power factor. Although the electrical thermal conductivity is high due to the high carrier mobility and hence electrical conductivity, the total thermal conductivity is moderate because of the low lattice thermal conductivity. The predicted high zT demonstrates that the p-type RuTaSb HH alloys are promising as TE materials for high temperature power generation.

  9. Boric acid solution concentration influencing p-type emitter formation in n-type crystalline Si solar cells

    NASA Astrophysics Data System (ADS)

    Singha, Bandana; Singh Solanki, Chetan

    2016-09-01

    Boric acid (BA) is a spin on dopant (BSoD) source which is used to form p+ emitters in n-type c-Si solar cells. High purity boric acid powder (99.99% pure) when mixed with deionized (DI) water can result in high quality p-type emitter with less amount of surface defects. In this work, we have used different concentrations of boric acid solution concentrations to fabricate p-type emitters with sheet resistance values < 90 Ω/□. The corresponding junction depths for the same are less than 500 nm as measured by SIMS analysis. Boron rich layer (BRL), which is considered as detrimental in emitter performance is found to be minimal for BA solution concentration less than 2% and hence useful for p-type emitter formation.

  10. Weak-Localization in n- and p-TYPE Films of Pb1-xEuxTe

    NASA Astrophysics Data System (ADS)

    Peres, M. L.; Chitta, V. A.; Gusev, G. M.; Oliveira, Nei F.; Rappl, P. H. O.; Ueta, A. Y.; Abramof, E.

    We investigated the magnetotransport properties of n- and p-type films of Pb1-xEuxTe grown by molecular beam epitaxy, with Eu concentrations close to the Metal-Insulator transition. The n-type sample shows a negative magnetoresistance which magnitude increases continually as the temperature is lowered. On the other hand, for the p-type sample, a negative magnetoresistance can be observed only for temperatures below 7 K. Comparing the magnetoresistance of both samples we show that the scattering mechanism should have a different origin.

  11. Direct-Coated Photoconducting Nanocrystalline PbS Thin Films with Tunable Band Gap

    NASA Astrophysics Data System (ADS)

    Vankhade, Dhaval; Kothari, Anjana; Chaudhuri, Tapas K.

    2016-06-01

    Nanocrystalline PbS thin films are deposited on glass by direct coating from a precursor solution of lead acetate and thiourea in methanol. A single coating has a thickness of 50 nm and greater thicknesses are obtained from layer by layer deposition. The films are smooth and shiny with roughness (rms) of about 1.5 nm. X-ray diffraction studies show that films are cubic PbS with crystallite size about 10 nm. The films are p-type with dark electrical conductivities in the range of 0.4-0.5 S/cm. These films are basically photoconducting. Photoconductivity monotonically increases with increase in thickness. The band gap of the films strongly depends on the thickness of the films. The band gap decreases from 2.4 eV to 1.6 eV as the thickness is increased from 50 nm to 450 nm. The tunability of the band gap is useful for technical applications, such as solar cells and photodetectors.

  12. Nanocrystalline graphite films nucleation by the radio frequency bias pretreatment.

    PubMed

    Dvorkin, V V; Dzbanovsky, N N; Krivchenko, V A; Suetin, N V; Rakhimov, A T; Timofeyev, M A; Bespalov, A V; Golikova, O L

    2011-10-01

    New method for nucleation of different nanocrystalline carbon films upon monocrystalline Si substrate was proposed. The process is based on a combination of microwave and radio frequency plasma assisted chemical vapor deposition methods. Potential of the method for nucleation was demonstrated by deposition of nanocrystalline diamond film in pure microwave plasma in one process, immediately after "seeding" procedure. The method was also used for growth of nanocrystalline graphite (NCG) films, which are currently under intensive investigation due to their exceptional electronic properties, particularly fine electron emission characteristics. Deposited NCG films have demonstrated remarkable electron field emission properties having current density of up to 10 A/cm2. The films have also possessed good adhesion to silicon substrate. Carbon films and nucleation layer were characterized by scanning electron microscopy, transmission electron microscopy and Raman spectroscopy.

  13. Modeling the deformation behavior of nanocrystalline alloy with hierarchical microstructures

    NASA Astrophysics Data System (ADS)

    Liu, Hongxi; Zhou, Jianqiu; Zhao, Yonghao

    2016-02-01

    A mechanism-based plasticity model based on dislocation theory is developed to describe the mechanical behavior of the hierarchical nanocrystalline alloys. The stress-strain relationship is derived by invoking the impeding effect of the intra-granular solute clusters and the inter-granular nanostructures on the dislocation movements along the sliding path. We found that the interaction between dislocations and the hierarchical microstructures contributes to the strain hardening property and greatly influence the ductility of nanocrystalline metals. The analysis indicates that the proposed model can successfully describe the enhanced strength of the nanocrystalline hierarchical alloy. Moreover, the strain hardening rate is sensitive to the volume fraction of the hierarchical microstructures. The present model provides a new perspective to design the microstructures for optimizing the mechanical properties in nanostructural metals.

  14. Mesoporous silica and organosilica films templated by nanocrystalline chitin.

    PubMed

    Nguyen, Thanh-Dinh; Shopsowitz, Kevin E; MacLachlan, Mark J

    2013-11-04

    Liquid crystalline phases can be used to impart order into inorganic solids, creating materials that mimic natural architectures. Herein, mesoporous silica and organosilica films with layered structures and high surface areas have been templated by nanocrystalline chitin. Aqueous suspensions of spindle-shaped chitin nanocrystals were prepared by sequential deacetylation and hydrolysis of chitin fibrils isolated from king crab shells. The nanocrystalline chitin self-assembles into a nematic liquid-crystalline phase that has been used to template silica and organosilica composites. Removal of the chitin template by either calcination or sulfuric-acid-catalyzed hydrolysis gave mesoporous silica and ethylene-bridged organosilica films. The large, crack-free mesoporous films have layered structures with features that originate from the nematic organization of the nanocrystalline chitin.

  15. Sustainable commercial nanocrystalline cellulose manufacturing process with acid recycling.

    PubMed

    Sarma, Saurabh Jyoti; Ayadi, Mariem; Brar, Satinder Kaur; Berry, Richard

    2017-01-20

    Nanocrystalline cellulose (NCC) is a biomaterial having potential applications in a wide range of industries. It is industrially produced by concentrated acid hydrolysis of cellulosic materials. In this process, the sulfuric acid rich liquor can be concentrated and reused. However, removal of sugar monomers and oligomers is necessary for such recycling. Membrane and ion exchange technology can be employed to remove sugars; however, such technologies are not efficient in meeting the quality required to recycle the acid solution. As a part of the present study, activated carbon (AC) has been evaluated as an adsorbent for sugar removal from the acidic solution generated during commercial nanocrystalline cellulose manufacturing process. Almost complete removal of sugar can be achieved by this approach. The maximum sugar removal observed during this study was 3.4g/g of AC. Based on this finding, a sustainable method has been proposed for commercial nanocrystalline cellulose manufacturing.

  16. Nanocrystalline films for gas-reactive applications

    DOEpatents

    Eastman, Jeffrey A.; Thompson, Loren J.

    2004-02-17

    A gas sensor for detection of oxidizing and reducing gases, including O.sub.2, CO.sub.2, CO, and H.sub.2, monitors the partial pressure of a gas to be detected by measuring the temperature rise of an oxide-thin-film-coated metallic line in response to an applied electrical current. For a fixed input power, the temperature rise of the metallic line is inversely proportional to the thermal conductivity of the oxide coating. The oxide coating contains multi-valent cation species that change their valence, and hence the oxygen stoichiometry of the coating, in response to changes in the partial pressure of the detected gas. Since the thermal conductivity of the coating is dependent on its oxygen stoichiometry, the temperature rise of the metallic line depends on the partial pressure of the detected gas. Nanocrystalline (<100 nm grain size) oxide coatings yield faster sensor response times than conventional larger-grained coatings due to faster oxygen diffusion along grain boundaries rather than through grain interiors.

  17. Mechanical properties of nanocrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Shen, Z. H.; Hess, P.; Huang, J. P.; Lin, Y. C.; Chen, K. H.; Chen, L. C.; Lin, S. T.

    2006-06-01

    Nanocrystalline diamond (NCD) films with thicknesses in the range of 0.12-1.5 μm were deposited on silicon substrates in CH4/H2/O2 gas mixtures by microwave plasma-enhanced chemical vapor deposition. The morphology and structure of these NCD films were analyzed by field-emission scanning electron microscopy, x-ray diffraction (XRD), and ultraviolet-Raman spectroscopy. The lower limit of the grain size in the NCD films was estimated to be 10 nm from the XRD measurements. These grains are embedded in a columnar-type structure. The elastic and mechanical properties of the NCD films were determined by measuring the dispersion of laser-induced surface acoustic waves. The densities were in the range of 3.41+/-0.11 g/cm3 and Young's moduli varied between 674+/-34 and 953+/-48 GPa, depending on the growth time and deposition conditions. It is concluded that oxygen may have a significant positive effect on the elastic properties of NCD films. The growth rate decreases sharply for an oxygen content in the source gas in excess of about 4%.

  18. Rheology of nanocrystalline cellulose aqueous suspensions.

    PubMed

    Shafiei-Sabet, Sadaf; Hamad, Wadood Y; Hatzikiriakos, Savvas G

    2012-12-11

    The rheological properties and microstructure of nanocrystalline cellulose (NCC) aqueous suspensions have been investigated at different concentrations. The suspension is isotropic up to 3 wt %, and phase separates to liquid crystalline and isotropic domains at higher concentrations where the samples exhibit a fingerprint texture and the viscosity profile shows a three-region behavior, typical of liquid crystals. The suspension behaves as a rheological gel at even higher concentrations where the viscosity profile shows a single shear thinning behavior over the whole range of shear rates investigated. The effects of ultrasound energy and temperature on the rheological properties and structure of these suspensions were studied using polarized optical microscopy and rheometry. Our results indicate that the amount of applied ultrasound energy affects the microstructure of the suspensions and the pitch of the chiral nematic domains. The viscosity profile is changed significantly at low shear rates, whereas the viscosity of biphasic suspensions at intermediate and high shear rates decreased with increasing temperature. This suggests that, between 30 and 40 °C, structural rearrangement takes place. At higher concentrations of about 10 wt %, the temperature has no significant effect on viscosity; however, a marked increase in viscosity has been observed at around 50 °C. Finally, the Cox-Merz rule was found to fail after a critical concentration, thereby implying significant structural formation. This critical concentration is much higher for sonicated compared to unsonicated suspensions.

  19. Nanocrystalline hexagonal diamond formed from glassy carbon

    DOE PAGES

    Shiell, Thomas. B.; McCulloch, Dougal G.; Bradby, Jodie E.; ...

    2016-11-29

    Carbon exhibits a large number of allotropes and its phase behaviour is still subject to signifcant uncertainty and intensive research. The hexagonal form of diamond, also known as lonsdaleite, was discovered in the Canyon Diablo meteorite where its formation was attributed to the extreme conditions experienced during the impact. However, it has recently been claimed that lonsdaleite does not exist as a well-defned material but is instead defective cubic diamond formed under high pressure and high temperature conditions. Here we report the synthesis of almost pure lonsdaleite in a diamond anvil cell at 100GPa and 400 C. The nanocrystalline materialmore » was recovered at ambient and analysed using difraction and high resolution electron microscopy. We propose that the transformation is the result of intense radial plastic fow under compression in the diamond anvil cell, which lowers the energy barrier by locking in favourable stackings of graphene sheets. This strain induced transformation of the graphitic planes of the precursor to hexagonal diamond is supported by frst principles calculations of transformation pathways and explains why the new phase is found in an annular region. Furthermore, our findings establish that high purity lonsdaleite is readily formed under strain and hence does not require meteoritic impacts.« less

  20. Nanocrystalline hexagonal diamond formed from glassy carbon

    SciTech Connect

    Shiell, Thomas. B.; McCulloch, Dougal G.; Bradby, Jodie E.; Haberl, Bianca; Boehler, Reinhard; McKenzie, David. R.

    2016-11-29

    Carbon exhibits a large number of allotropes and its phase behaviour is still subject to signifcant uncertainty and intensive research. The hexagonal form of diamond, also known as lonsdaleite, was discovered in the Canyon Diablo meteorite where its formation was attributed to the extreme conditions experienced during the impact. However, it has recently been claimed that lonsdaleite does not exist as a well-defned material but is instead defective cubic diamond formed under high pressure and high temperature conditions. Here we report the synthesis of almost pure lonsdaleite in a diamond anvil cell at 100GPa and 400 C. The nanocrystalline material was recovered at ambient and analysed using difraction and high resolution electron microscopy. We propose that the transformation is the result of intense radial plastic fow under compression in the diamond anvil cell, which lowers the energy barrier by locking in favourable stackings of graphene sheets. This strain induced transformation of the graphitic planes of the precursor to hexagonal diamond is supported by frst principles calculations of transformation pathways and explains why the new phase is found in an annular region. Furthermore, our findings establish that high purity lonsdaleite is readily formed under strain and hence does not require meteoritic impacts.

  1. Nanocrystalline hexagonal diamond formed from glassy carbon

    NASA Astrophysics Data System (ADS)

    Shiell, Thomas. B.; McCulloch, Dougal G.; Bradby, Jodie E.; Haberl, Bianca; Boehler, Reinhard; McKenzie, David. R.

    2016-11-01

    Carbon exhibits a large number of allotropes and its phase behaviour is still subject to significant uncertainty and intensive research. The hexagonal form of diamond, also known as lonsdaleite, was discovered in the Canyon Diablo meteorite where its formation was attributed to the extreme conditions experienced during the impact. However, it has recently been claimed that lonsdaleite does not exist as a well-defined material but is instead defective cubic diamond formed under high pressure and high temperature conditions. Here we report the synthesis of almost pure lonsdaleite in a diamond anvil cell at 100 GPa and 400 °C. The nanocrystalline material was recovered at ambient and analysed using diffraction and high resolution electron microscopy. We propose that the transformation is the result of intense radial plastic flow under compression in the diamond anvil cell, which lowers the energy barrier by “locking in” favourable stackings of graphene sheets. This strain induced transformation of the graphitic planes of the precursor to hexagonal diamond is supported by first principles calculations of transformation pathways and explains why the new phase is found in an annular region. Our findings establish that high purity lonsdaleite is readily formed under strain and hence does not require meteoritic impacts.

  2. High pressure FAST of nanocrystalline barium titanate

    DOE PAGES

    Fraga, Martin B.; Delplanque, Jean -Pierre; Yang, Nancy; ...

    2016-06-01

    Here, this work studies the microstructural evolution of nanocrystalline (<1 µm) barium titanate (BaTiO3), and presents high pressure in field-assisted sintering (FAST) as a robust methodology to obtain >100 nm BaTiO3 compacts. Using FAST, two commercial ~50 nm powders were consolidated into compacts of varying densities and grain sizes. Microstructural inhomogeneities were investigated for each case, and an interpretation is developed using a modified Monte Carlo Potts (MCP) simulation. Two recurrent microstructural inhomogeneities are highlighted, heterogeneous grain growth and low-density regions, both ubiqutously present in all samples to varying degrees. In the worst cases, HGG presents an area coverage ofmore » 52%. Because HGG is sporadic but homogenous throughout a sample, the catalyst (e.g., the local segregation of species) must be, correspondingly, distributed in a homogenous manner. MCP demonstrates that in such a case, a large distance between nucleating abnormal grains is required—otherwise abnormal grains prematurely impinge on each other, and their size is not distinguishable from that of normal grains. Compacts sintered with a pressure of 300 MPa and temperatures of 900 °C, were 99.5% dense and had a grain size of 90±24 nm. These are unprecedented results for commercial BaTiO3 powders or any starting powder of 50 nm particle size—other authors have used 16 nm lab-produced powder to obtain similar results.« less

  3. High pressure FAST of nanocrystalline barium titanate

    SciTech Connect

    Fraga, Martin B.; Delplanque, Jean -Pierre; Yang, Nancy; Lavernia, Enrique J.; Monson, Todd C.

    2016-06-01

    Here, this work studies the microstructural evolution of nanocrystalline (<1 µm) barium titanate (BaTiO3), and presents high pressure in field-assisted sintering (FAST) as a robust methodology to obtain >100 nm BaTiO3 compacts. Using FAST, two commercial ~50 nm powders were consolidated into compacts of varying densities and grain sizes. Microstructural inhomogeneities were investigated for each case, and an interpretation is developed using a modified Monte Carlo Potts (MCP) simulation. Two recurrent microstructural inhomogeneities are highlighted, heterogeneous grain growth and low-density regions, both ubiqutously present in all samples to varying degrees. In the worst cases, HGG presents an area coverage of 52%. Because HGG is sporadic but homogenous throughout a sample, the catalyst (e.g., the local segregation of species) must be, correspondingly, distributed in a homogenous manner. MCP demonstrates that in such a case, a large distance between nucleating abnormal grains is required—otherwise abnormal grains prematurely impinge on each other, and their size is not distinguishable from that of normal grains. Compacts sintered with a pressure of 300 MPa and temperatures of 900 °C, were 99.5% dense and had a grain size of 90±24 nm. These are unprecedented results for commercial BaTiO3 powders or any starting powder of 50 nm particle size—other authors have used 16 nm lab-produced powder to obtain similar results.

  4. Characterisation of Suspension Precipitated Nanocrystalline Hydroxyapatite Powders

    NASA Astrophysics Data System (ADS)

    Mallik, P. K.; Swain, P. K.; Patnaik, S. C.

    2016-02-01

    Hydroxyapatite (HA) is a well-known biomaterial for coating on femoral implants, filling of dental cavity and scaffold for tissue replacement. Hydroxyapatite possess limited load bearing capacity due to their brittleness. In this paper, the synthesis of nanocrystalline hydroxyapatite powders was prepared by dissolving calcium oxide in phosphoric acid, followed by addition of ammonia liquor in a beaker. The prepared solution was stirred by using magnetic stirrer operated at temperature of 80°C for an hour. This leads to the formation of hydroxyapatite precipitate. The precipitate was dried in oven for overnight at 100°C. The dried agglomerated precipitate was calcined at 800°C in conventional furnace for an hour. The influence of calcium oxide concentration and pH on the resulting precipitates was studied using BET, XRD and SEM. As result, a well-defined sub-rounded morphology of powders size of ∼41 nm was obtained with a salt concentration of 0.02 M. Finally, it can be concluded that small changes in the reaction conditions led to large changes in final size, shape and degree of aggregation of the hydroxyapatite particles.

  5. Nanocrystalline hexagonal diamond formed from glassy carbon

    PubMed Central

    Shiell, Thomas. B.; McCulloch, Dougal G.; Bradby, Jodie E.; Haberl, Bianca; Boehler, Reinhard; McKenzie, David. R.

    2016-01-01

    Carbon exhibits a large number of allotropes and its phase behaviour is still subject to significant uncertainty and intensive research. The hexagonal form of diamond, also known as lonsdaleite, was discovered in the Canyon Diablo meteorite where its formation was attributed to the extreme conditions experienced during the impact. However, it has recently been claimed that lonsdaleite does not exist as a well-defined material but is instead defective cubic diamond formed under high pressure and high temperature conditions. Here we report the synthesis of almost pure lonsdaleite in a diamond anvil cell at 100 GPa and 400 °C. The nanocrystalline material was recovered at ambient and analysed using diffraction and high resolution electron microscopy. We propose that the transformation is the result of intense radial plastic flow under compression in the diamond anvil cell, which lowers the energy barrier by “locking in” favourable stackings of graphene sheets. This strain induced transformation of the graphitic planes of the precursor to hexagonal diamond is supported by first principles calculations of transformation pathways and explains why the new phase is found in an annular region. Our findings establish that high purity lonsdaleite is readily formed under strain and hence does not require meteoritic impacts. PMID:27897174

  6. Nanocrystalline hexagonal diamond formed from glassy carbon.

    PubMed

    Shiell, Thomas B; McCulloch, Dougal G; Bradby, Jodie E; Haberl, Bianca; Boehler, Reinhard; McKenzie, David R

    2016-11-29

    Carbon exhibits a large number of allotropes and its phase behaviour is still subject to significant uncertainty and intensive research. The hexagonal form of diamond, also known as lonsdaleite, was discovered in the Canyon Diablo meteorite where its formation was attributed to the extreme conditions experienced during the impact. However, it has recently been claimed that lonsdaleite does not exist as a well-defined material but is instead defective cubic diamond formed under high pressure and high temperature conditions. Here we report the synthesis of almost pure lonsdaleite in a diamond anvil cell at 100 GPa and 400 °C. The nanocrystalline material was recovered at ambient and analysed using diffraction and high resolution electron microscopy. We propose that the transformation is the result of intense radial plastic flow under compression in the diamond anvil cell, which lowers the energy barrier by "locking in" favourable stackings of graphene sheets. This strain induced transformation of the graphitic planes of the precursor to hexagonal diamond is supported by first principles calculations of transformation pathways and explains why the new phase is found in an annular region. Our findings establish that high purity lonsdaleite is readily formed under strain and hence does not require meteoritic impacts.

  7. A simple route to nanocrystalline silicon carbide

    NASA Astrophysics Data System (ADS)

    Ying, Yongcheng; Gu, Yunle; Li, Zhefeng; Gu, Hongzhou; Cheng, Luyang; Qian, Yitai

    2004-11-01

    Nanocrystalline silicon carbide has been prepared via reacting magnesium silicide (Mg 2Si) with carbon tetrachloride (CCl 4) in an autoclave at 450-600°C. X-ray diffraction patterns of the products can be indexed as the cubic cell of SiC with the lattice constant, a=4.352 Å, in good agreement with a=4.349 Å (JCPDS card No. 75-0254). The transmission electron microscopy images show that the sample mainly consists of nanoparticles with an average size from 30 to 80 nm co-existing with a small fraction of nanorods and nanowires. Typically the nanorods range from 20 to 40 nm in diameter and the nanowires have diameters of 20 nm and lengths up to 10 μm. The Raman spectrum shows a characteristic sharp peak at 790 cm -1. X-ray photoelectron spectra (XPS) gives an atomic ratio of Si to C as 1.08:1.00 from the quantification of the peak intensities. Photoluminescence spectrum reveals that the SiC sample emits ultraviolet light of 328 nm. A possible mechanism and the influence of temperature on the formation of crystalline SiC are proposed.

  8. Research Update: Phonon engineering of nanocrystalline silicon thermoelectrics

    NASA Astrophysics Data System (ADS)

    Shiomi, Junichiro

    2016-10-01

    Nanocrystalline silicon thermoelectrics can be a solution to improve the cost-effectiveness of thermoelectric technology from both material and integration viewpoints. While their figure-of-merit is still developing, recent advances in theoretical/numerical calculations, property measurements, and structural synthesis/fabrication have opened up possibilities to develop the materials based on fundamental physics of phonon transport. Here, this is demonstrated by reviewing a series of works on nanocrystalline silicon materials using calculations of multiscale phonon transport, measurements of interfacial heat conduction, and synthesis from nanoparticles. Integration of these approaches allows us to engineer phonon transport to improve the thermoelectric performance by introducing local silicon-oxide structures.

  9. Patterned growth of p-type MoS2 atomic layers using sol-gel as precursor

    DOE PAGES

    Zheng, Wei; Lin, Junhao; Feng, Wei; ...

    2016-07-19

    2D layered MoS2 has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS2 atomic layers grown by conventional chemical vapor deposition techniques are n-type due to the abundant sulfur vacancies. Facile production of MoS2 atomic layers with p-type behavior, however, remains challenging. Here, a novel one-step growth has been developed to attain p-type MoS2 layers in large scale by using Mo-containing sol–gel, including 1% tungsten (W). Atomic-resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as-grown MoS2 film due to the incomplete reduction of W precursormore » at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p-type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS2 atomic layers. The Mo containing sol–gel precursor is compatible with the soft-lithography techniques, which enables patterned growth of p-type MoS2 atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Lastly, an atomically thin p–n junction is fabricated by the as-prepared MoS2, which shows strong rectifying behavior.« less

  10. Study of p-type ZnO and MgZnO Thin Films for Solid State Lighting

    SciTech Connect

    Liu, Jianlin

    2015-07-31

    This project on study of p-type ZnO and MgZnO thin films for solid state lighting was carried out by research group of Prof. Jianlin Liu of UCR during the four-year period between August 2011 and July 2015. Tremendous progress has been made on the proposed research. This final report summarizes the important findings.

  11. Identification and molecular characterization of a novel DyP-type peroxidase from Pseudomonas aeruginosa PKE117.

    PubMed

    Li, Jing; Liu, Chen; Li, Baozhen; Yuan, Hongli; Yang, Jinshui; Zheng, Beiwen

    2012-02-01

    A new DyP-type peroxidase from Pseudomonas aeruginosa PKE117 was identified and characterized. The dypPa was first identified via sequence analysis and then cloned in Escherichia coli. Subsequently, the recombinant protein DyPPa was expressed and purified. Its DNA sequence analysis revealed an open reading frame of 897 bp, encoding a protein monomer of 299 amino acid residues with isoelectric point 4.62. According to SDS-PAGE analysis and FPLC result, DyPPa mainly existed as homodimer (64 kDa). DyPPa displayed typical heme absorbance of Soret band, with an Rz value of 1.18. Inductively coupled plasma-atomic absorption spectrum data also indicated DyPPa contained iron. Multiple amino acid sequence alignment of DyPPa with other members of the DyP-type peroxidases family showed the presence of conserved D139, H210, and R227 amino acids and GXXDG motifs, which were commonly shared by the DyP-type peroxidase family. Although the primary structure homology between DyPPa and other family members was very low, their secondary and tertiary structure displayed high homology, which explained the high decolorizing activity of DyPPa. Specifically, DyPPa displayed a good thermal stability and maximal activity on Reactive blue 5 under pH 3.5. Therefore, it was proposed that DyPPa, with a wide range of substrate specificity, was a novel member of the DyP-type peroxidases family.

  12. Native defect properties and p -type doping efficiency in group-IIA doped wurtzite AlN

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; Liu, Wen; Niu, Hanben

    2008-01-01

    Using the first-principles full-potential linearized augmented plane-wave (FPLAPW) method based on density functional theory (DFT), we have investigated the native defect properties and p -type doping efficiency in AlN doped with group-IIA elements such as Be, Mg, and Ca. It is shown that nitrogen vacancies (VN) have low formation energies and introduce deep donor levels in wurtzite AlN, while in zinc blende AlN and GaN, these levels are reported to be shallow. The calculated acceptor levels γ(0/-) for substitutional Be (BeAl) , Mg (MgAl) , and Ca (CaAl) are 0.48, 0.58, and 0.95eV , respectively. In p -type AlN, Be interstitials (Bei) , which act as donors, have low formation energies, making them a likely compensating center in the case of acceptor doping. Whereas, when N-rich growth conditions are applied, Bei are energetically not favorable. It is found that p -type doping efficiency of substitutional Be, Mg, and Ca impurities in w-AlN is affected by atomic size and electronegativity of dopants. Among the three dopants, Be may be the best candidate for p -type w-AlN . N-rich growth conditions help us to increase the concentration of BeAl , MgAl , and CaAl .

  13. Patterned growth of p-type MoS2 atomic layers using sol-gel as precursor

    SciTech Connect

    Zheng, Wei; Lin, Junhao; Feng, Wei; Xiao, Kai; Qiu, Yunfeng; Chen, XiaoShuang; Liu, Guangbo; Cao, Wenwu; Pantelides, Sokrates T.; Zhou, Wu; Hu, PingAn

    2016-07-19

    2D layered MoS2 has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS2 atomic layers grown by conventional chemical vapor deposition techniques are n-type due to the abundant sulfur vacancies. Facile production of MoS2 atomic layers with p-type behavior, however, remains challenging. Here, a novel one-step growth has been developed to attain p-type MoS2 layers in large scale by using Mo-containing sol–gel, including 1% tungsten (W). Atomic-resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as-grown MoS2 film due to the incomplete reduction of W precursor at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p-type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS2 atomic layers. The Mo containing sol–gel precursor is compatible with the soft-lithography techniques, which enables patterned growth of p-type MoS2 atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Lastly, an atomically thin p–n junction is fabricated by the as-prepared MoS2, which shows strong rectifying behavior.

  14. Optical and electronic properties of delafossite CuBO{sub 2}p-type transparent conducting oxide

    SciTech Connect

    Ruttanapun, Chesta E-mail: krchesta@kmitl.ac.th

    2013-09-21

    CuBO{sub 2} delafossite was prepared by solid state reaction and calcined/sintered at 1005 °C. The optical properties of this p-type transparent conducting oxide were investigated. Its crystal structure, morphology, composition, oxygen decomposition, and optical and electronic properties were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, thermal gravimetric analysis (TGA), ultraviolet-visible-near-infrared (UV-VIS-NIR) and fluorescence spectroscopies, Seebeck coefficient, and electrical conductivity measurements. CuBO{sub 2} delafossite possesses a hexagonal space group R3{sup ¯}m. TGA indicated a weight loss of 10%, which was attributed to excess oxygen. The positive Seebeck coefficient confirmed p-type behavior. Emission at 355 nm indicated a direct band type transition, and the UV-VIS-NIR spectrum indicated an optical direct gap of 3.6 eV. Activation energies for carrier production and electrical conduction were 0.147 and 0.58 eV, respectively, indicating the thermal activation of carriers. CuBO{sub 2} delafossite is a p-type transparent conducting oxide with a wide band gap and may have potential in industrial p-type electrodes.

  15. In silico approaches and chemical space of anti-P-type ATPase compounds for discovering new antituberculous drugs.

    PubMed

    Santos, Paola; López-Vallejo, Fabian; Soto, Carlos-Y

    2017-01-22

    Tuberculosis (TB) is one of the most important public health problems around the world. The emergence of multi-drug-resistant (MDR) and extensively drug-resistant (XDR) Mycobacterium tuberculosis strains has driven the finding of alternative anti-TB targets. In this context, P-type ATPases are interesting therapeutic targets due to their key role in ion homeostasis across the plasma membrane and the mycobacterial survival inside macrophages. In this review, in silico and experimental strategies used for the rational design of new anti-TB drugs are presented; in addition, the chemical space distribution based on the structure and molecular properties of compounds with anti-TB and anti-P-type ATPase activity is discussed. The chemical space distribution compared to public compound libraries demonstrates that natural product libraries are a source of novel chemical scaffolds with potential anti-P-type ATPase activity. Furthermore, compounds that experimentally display anti-P-type ATPase activity belong to a chemical space of molecular properties comparable to that occupied by those approved for oral use, suggesting that these kinds of molecules have a good pharmacokinetic profile (drug-like) for evaluation as potential anti-TB drugs.

  16. Hydrogen energy progress 5678

    SciTech Connect

    Veziroglu, T.N. )

    1990-01-01

    This book covers the proceedings of the 8th World Hydrogen Energy Conference, and includes: international hydrogen energy programs; hydrogen production; storage of hydrogen; hydrogen transmission and distribution; combustion systems/hydrogen engines; fuel cells; and synfuel production.

  17. Hydrogen generator

    SciTech Connect

    Hansen, J.R.

    1984-06-19

    A hydrogen generator decomposes water into hydrogen and oxygen, and includes an induction coil which is electrically heated to a temperature sufficient to decompose water passing therethrough. A generator coil is connected in communicating relation to the induction coil, and is positioned in a fire resistant crucible containing ferrous oxide pellets. Oxygen and hydrogen produced by decomposition of water pass through the ferrous oxide pellets where the oxygen reacts with the ferrous oxide and the hydrogen is burned to produce heat for heating a building, such as a conventional home.

  18. S-type and P-type Habitability in Stellar Binary Systems: A Comprehensive Approach. I. Method and Applications

    NASA Astrophysics Data System (ADS)

    Cuntz, M.

    2014-01-01

    A comprehensive approach is provided for the study of both S-type and P-type habitability in stellar binary systems, which in principle can also be expanded to systems of higher order. P-type orbits occur when the planet orbits both binary components, whereas in the case of S-type orbits, the planet orbits only one of the binary components with the second component considered a perturbator. The selected approach encapsulates a variety of different aspects, which include: (1) the consideration of a joint constraint, including orbital stability and a habitable region for a putative system planet through the stellar radiative energy fluxes ("radiative habitable zone"; RHZ), needs to be met; (2) the treatment of conservative, general, and extended zones of habitability for the various systems as defined for the solar system and beyond; (3) the provision of a combined formalism for the assessment of both S-type and P-type habitability; in particular, mathematical criteria are presented for the kind of system in which S-type and P-type habitability is realized; (4) applications of the attained theoretical approach to standard (theoretical) main-sequence stars. In principle, five different cases of habitability are identified, which are S-type and P-type habitability provided by the full extent of the RHZs; habitability, where the RHZs are truncated by the additional constraint of planetary orbital stability (referred to as ST- and PT-type, respectively); and cases of no habitability at all. Regarding the treatment of planetary orbital stability, we utilize the formulae of Holman & Wiegert as also used in previous studies. In this work, we focus on binary systems in circular orbits. Future applications will also consider binary systems in elliptical orbits and provide thorough comparisons to other methods and results given in the literature.

  19. S-type and P-type habitability in stellar binary systems: A comprehensive approach. I. Method and applications

    SciTech Connect

    Cuntz, M.

    2014-01-01

    A comprehensive approach is provided for the study of both S-type and P-type habitability in stellar binary systems, which in principle can also be expanded to systems of higher order. P-type orbits occur when the planet orbits both binary components, whereas in the case of S-type orbits, the planet orbits only one of the binary components with the second component considered a perturbator. The selected approach encapsulates a variety of different aspects, which include: (1) the consideration of a joint constraint, including orbital stability and a habitable region for a putative system planet through the stellar radiative energy fluxes ({sup r}adiative habitable zone{sup ;} RHZ), needs to be met; (2) the treatment of conservative, general, and extended zones of habitability for the various systems as defined for the solar system and beyond; (3) the provision of a combined formalism for the assessment of both S-type and P-type habitability; in particular, mathematical criteria are presented for the kind of system in which S-type and P-type habitability is realized; (4) applications of the attained theoretical approach to standard (theoretical) main-sequence stars. In principle, five different cases of habitability are identified, which are S-type and P-type habitability provided by the full extent of the RHZs; habitability, where the RHZs are truncated by the additional constraint of planetary orbital stability (referred to as ST- and PT-type, respectively); and cases of no habitability at all. Regarding the treatment of planetary orbital stability, we utilize the formulae of Holman and Wiegert as also used in previous studies. In this work, we focus on binary systems in circular orbits. Future applications will also consider binary systems in elliptical orbits and provide thorough comparisons to other methods and results given in the literature.

  20. Preparation of nanocrystalline metal oxides and intermetallic phases by controlled thermolysis of organometallic coordination polymers

    NASA Astrophysics Data System (ADS)

    Rehbein, Marcus; Epple, Matthias; Fischer, R. Dieter

    2000-06-01

    Organometallic coordination polymers of the super-Prussian blue type [(Me 3Sn) nM(CN) 6] (Me=CH 3; n=3, 4; M=Fe, Co, Ru) were subjected to thermolysis in different atmospheres (air, argon, hydrogen/nitrogen). In air, oxides were found: Fe 2O 3/SnO 2 (crystalline and nanocrystalline), Co 2SnO 4 and RuO 2. In argon and in hydrogen, the intermetallic phases FeSn 2, CoSn 2, Ru 3Sn 7 and Fe 3SnC were obtained. A detailed mechanistic study was carried out using thermogravimetry (TG), X-ray diffraction (XRD), X-ray absorption spectroscopy (EXAFS) at Fe, Co, Ru and Sn K-edges, infrared spectroscopy (IR) and elemental analysis. Below 250°C, Me 3SnCN and (CN) 2 are released, whereas above 250°C oxidation or pyrolysis leads to the corresponding oxides or intermetallic phases. Polymeric cyanides containing at least two metals have turned out to be suitable precursors to prepare well-defined oxides and intermetallic phases at comparatively low temperature.

  1. Nanocrystalline germanium nip solar cells with spectral sensitivities extending into 1450 nm

    NASA Astrophysics Data System (ADS)

    Li, Chang; Ni, Jian; Sun, Xiaoxiang; Wang, Xinyu; Li, Zhenglong; Cai, Hongkun; Li, Juan; Zhang, Jianjun

    2017-02-01

    To absorb the infrared part of the solar spectrum more efficiently, narrow bandgap hydrogenated nanocrystalline germanium (nc-Ge:H) thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition at a low temperature of 180 °C. While the incubation layer of the nc-Ge:H was reduced to less than 5 nm by using the ultra-high hydrogen dilution, the negative photoconductivity behavior was still observed as the thickness of nc-Ge:H up to 30 nm. Therefore, as the best candidate for solar cells application, the nc-Ge:H (20 nm)/nc-Si:H (10 nm) periodic multilayer structure was prepared and used as the absorption layer of nc-Ge:H nip solar cells. More importantly, the spectral sensitivities extending into the wavelength of 1450 nm were achieved in the nc-Ge:H nip solar cells. In addition, the annealing for the nc-Ge:H nip solar cells was carried out. While the overall short circuit current density of the device is improved after 500 °C annealing, the spectral sensitivities in the infrared region is decreased due to the the coalescence of Ge crystallites.

  2. Deposition of polycrystalline and nanocrystalline diamond on graphite: effects of surface pre-treatments

    NASA Astrophysics Data System (ADS)

    Villalpando, I.; John, P.; Porro, S.; Wilson, J. I. B.

    2017-03-01

    The growth of hydrogenated sp3-phase of diamond on the sp2-phase of graphite by Microwave Plasma Enhanced Chemical Vapour Deposition (MPECVD) is a challenge, primarily because hydrogen etches graphite much faster than the growth rate of diamond. To enhance nucleation of diamond on graphite, we used a plethora of techniques such as plasma etching, ion bombardment, manual scratching, and scratching by ultrasonic agitation. Nanocrystalline and polycrystalline diamond thin-films were grown by MPECVD on the surface of pre-treated or pristine graphite using 1.5, 3.0, and 3.6 kW microwave power. Samples were characterised by Scanning Electron Microscopy, Raman Spectroscopy, and X-ray Photoelectron Spectroscopy. Species in the gas phase during film deposition were monitored by Optical Emission Spectroscopy. We have found that the surface area covered and the morphology of the diamond films are dependent on the surface pre-treatment. The crystallite size of the films depends on the microwave power used during MPECVD growth. The results of this study establish the protocols for diamond deposition by MPECVD on graphite substrates with a desired crystalline quality based on the pre-treatment of the substrate and the microwave power used during MPECVD. These results are important to modern applications, such as plasma facing materials, in which diamond has shown outstanding performance in contrast to that of graphite.

  3. Tribological properties of nanocrystalline diamond films

    SciTech Connect

    Erdemir, A.; Fenske, G. R.; Kraus, A. R.; Gruen, D. M.; McCauley, T.; Csencsits, R. T.

    2000-01-26

    In this paper, the authors present the friction and wear properties of nanocrystalline diamond (NCD) films grown in A-fullerene (C{sub 60}) and Ar-CH{sub 4} microwave plasmas. Specifically, they address the fundamental tribological issues posed by these films during sliding against Si{sub 3}N{sub 4} counterfaces in ambient air and inert gases. Grain sizes of the films grown by the new method are very small (10--30 nm) and are much smoother (20-40 nm, root mean square) than those of films grown by the conventional H{sub 2}-CH{sub 4} microwave-assisted chemical-vapor-deposition (CVD) process. Transmission electron microscopy (TEM) revealed that the grain boundaries of these films are very sharp and free of nondiamond phases. The microcrystalline diamond (MCD) films grown by most conventional methods consist of large grains and a rough surface finish, which can cause severe abrasion during sliding against other materials. The friction coefficients of films grown by the new method (i.e., in Ar-C{sub 60} and Ar-CH{sub 4} plasmas) are comparable to those of natural diamond, and wear damage on counterface materials is minimal. Fundamental tribological studies indicate that these films may undergo phase transformation during long-duration, high-speed and/or high-load sliding tests and that the transformation products trapped at the sliding interfaces can intermittently dominate friction and wear performance. Using results from a combination of TEM, electron diffraction, Raman spectroscopy, and electron energy loss spectroscopy (EELS), they describe the structural chemistry of the debris particles trapped at the sliding interfaces and elucidate their possible effects on friction and wear of NCD films in dry N{sub 2}. Finally, they suggest a few potential applications in which NCD films can improve performance and service lives.

  4. Copper removal using electrosterically stabilized nanocrystalline cellulose.

    PubMed

    Sheikhi, Amir; Safari, Salman; Yang, Han; van de Ven, Theo G M

    2015-06-03

    Removal of heavy metal ions such as copper using an efficient and low-cost method with low ecological footprint is a critical process in wastewater treatment, which can be achieved in a liquid phase using nanoadsorbents such as inorganic nanoparticles. Recently, attention has turned toward developing sustainable and environmentally friendly nanoadsorbents to remove heavy metal ions from aqueous media. Electrosterically stabilized nanocrystalline cellulose (ENCC), which can be prepared from wood fibers through periodate/chlorite oxidation, has been shown to have a high charge content and colloidal stability. Here, we show that ENCC scavenges copper ions by different mechanisms depending on the ion concentration. When the Cu(II) concentration is low (C0≲200 ppm), agglomerates of starlike ENCC particles appear, which are broken into individual starlike entities by shear and Brownian motion, as evidenced by photometric dispersion analysis, dynamic light scattering, and transmission electron microscopy. On the other hand, at higher copper concentrations, the aggregate morphology changes from starlike to raftlike, which is probably due to the collapse of protruding dicarboxylic cellulose (DCC) chains and ENCC charge neutralization by copper adsorption. Such raftlike structures result from head-to-head and lateral aggregation of neutralized ENCCs as confirmed by transmission electron microscopy. As opposed to starlike aggregates, the raftlike structures grow gradually and are prone to sedimentation at copper concentrations C0≳500 ppm, which eliminates a costly separation step in wastewater treatment processes. Moreover, a copper removal capacity of ∼185 mg g(-1) was achieved thanks to the highly charged DCC polyanions protruding from ENCC. These properties along with the biorenewability make ENCC a promising candidate for wastewater treatment, in which fast, facile, and low-cost removal of heavy metal ions is desired most.

  5. Hydrogen Bibliography

    SciTech Connect

    Not Available

    1991-12-01

    The Hydrogen Bibliography is a compilation of research reports that are the result of research funded over the last fifteen years. In addition, other documents have been added. All cited reports are contained in the National Renewable Energy Laboratory (NREL) Hydrogen Program Library.

  6. Hydrogen carriers

    NASA Astrophysics Data System (ADS)

    He, Teng; Pachfule, Pradip; Wu, Hui; Xu, Qiang; Chen, Ping

    2016-12-01

    Hydrogen has the potential to be a major energy vector in a renewable and sustainable future energy mix. The efficient production, storage and delivery of hydrogen are key technical issues that require improvement before its potential can be realized. In this Review, we focus on recent advances in materials development for on-board hydrogen storage. We highlight the strategic design and optimization of hydrides of light-weight elements (for example, boron, nitrogen and carbon) and physisorbents (for example, metal-organic and covalent organic frameworks). Furthermore, hydrogen carriers (for example, NH3, CH3OH-H2O and cycloalkanes) for large-scale distribution and for on-site hydrogen generation are discussed with an emphasis on dehydrogenation catalysts.

  7. The Nanocrystalline State of Narrow Gap Semiconducting Chalcogenides

    DTIC Science & Technology

    2010-08-23

    were carried out by dissolving nanocrystal powder in aqua - regia (HNO3: HCI, 1:3 volumetric ratio) followed by diluting with ultra pure water. A...change, etc Nanocrystalline AgPbmSbTem+2 and PbmSnTem+i material were prepared in reverse micellar assemblies at room temperature conditions. X-ray

  8. Nanocrystalline cellulose extracted from pine wood and corncob.

    PubMed

    Ditzel, Fernanda I; Prestes, Eduardo; Carvalho, Benjamim M; Demiate, Ivo M; Pinheiro, Luís A

    2017-02-10

    The extraction of nanocrystalline cellulose from agro-residues is an interesting alternative to recover these materials. In the present study, nanocrystalline cellulose was extracted from pine wood and corncob. In addition, microcrystalline cellulose was used as a reference to compare results. Initially, the lignocellulosic residues were submitted to delignification pre-treatments. At the end of the process, the bleached fibre was submitted to acid hydrolysis. Additionally, microparticles were obtained from the spray-drying of the nanocrystalline cellulose suspensions. The nanocrystalline cellulose yield for the pine wood was 9.0-% of the value attained for the microcrystalline cellulose. For the corncob, the value was 23.5-%. Therefore, complementary studies are necessary to improve the yield. The spray-dried microparticles showed a crystallinity index of 67.8-% for the pine wood, 70.9-% for the corncob and 79.3-% for the microcrystalline cellulose. These microparticles have great potential for use in the production of polymer composites processed by extrusion.

  9. Development of Bulk Nanocrystalline Cemented Tungsten Carbide for Industrial Applicaitons

    SciTech Connect

    Z. Zak Fang, H. Y. Sohn

    2009-03-10

    This report contains detailed information of the research program entitled "Development of Bulk Nanocrystalline Cemented Tungsten Carbide Materials for Industrial Applications". The report include the processes that were developed for producing nanosized WC/Co composite powders, and an ultrahigh pressure rapid hot consolidation process for sintering of nanosized powders. The mechanical properties of consolidated materials using the nanosized powders are also reported.

  10. Synthesis of Nano-Crystalline Gamma-TiAl Materials

    NASA Technical Reports Server (NTRS)

    Hales, Stephen J.; Vasquez, Peter

    2003-01-01

    One of the principal problems with nano-crystalline materials is producing them in quantities and sizes large enough for valid mechanical property evaluation. The purpose of this study was to explore an innovative method for producing nano-crystalline gamma-TiAl bulk materials using high energy ball milling and brief secondary processes. Nano-crystalline powder feedstock was produced using a Fritsch P4(TM) vario-planetary ball mill recently installed at NASA-LaRC. The high energy ball milling process employed tungsten carbide tooling (vials and balls) and no process control agents to minimize contamination. In a collaborative effort, two approaches were investigated, namely mechanical alloying of elemental powders and attrition milling of pre-alloyed powders. The objective was to subsequently use RF plasma spray deposition and short cycle vacuum hot pressing in order to effect consolidation while retaining nano-crystalline structure in bulk material. Results and discussion of the work performed to date are presented.

  11. Distinctive glial and neuronal interfacing on nanocrystalline diamond.

    PubMed

    Bendali, Amel; Agnès, Charles; Meffert, Simone; Forster, Valérie; Bongrain, Alexandre; Arnault, Jean-Charles; Sahel, José-Alain; Offenhäusser, Andreas; Bergonzo, Philippe; Picaud, Serge

    2014-01-01

    Direct electrode/neuron interfacing is a key challenge to achieve high resolution of neuronal stimulation required for visual prostheses. Neuronal interfacing on biomaterials commonly requires the presence of glial cells and/or protein coating. Nanocrystalline diamond is a highly mechanically stable biomaterial with a remarkably large potential window for the electrical stimulation of tissues. Using adult retinal cell cultures from rats, we found that glial cells and retinal neurons grew equally well on glass and nanocrystalline diamond. The use of a protein coating increased cell survival, particularly for glial cells. However, bipolar neurons appeared to grow even in direct contact with bare diamond. We investigated whether the presence of glial cells contributed to this direct neuron/diamond interface, by using purified adult retinal ganglion cells to seed diamond and glass surfaces with and without protein coatings. Surprisingly, these fully differentiated spiking neurons survived better on nanocrystalline diamond without any protein coating. This greater survival was indicated by larger cell numbers and the presence of longer neurites. When a protein pattern was drawn on diamond, neurons did not grow preferentially on the coated area, by contrast to their behavior on a patterned glass. This study highlights the interesting biocompatibility properties of nanocrystalline diamond, allowing direct neuronal interfacing, whereas a protein coating was required for glial cell growth.

  12. New route to the fabrication of nanocrystalline diamond films

    SciTech Connect

    Varshney, Deepak Morell, Gerardo; Palomino, Javier; Resto, Oscar; Gil, Jennifer; Weiner, Brad R.

    2014-02-07

    Nanocrystalline diamond (NCD) thin films offer applications in various fields, but the existing synthetic approaches are cumbersome and destructive. A major breakthrough has been achieved by our group in the direction of a non-destructive, scalable, and economic process of NCD thin-film fabrication. Here, we report a cheap precursor for the growth of nanocrystalline diamond in the form of paraffin wax. We show that NCD thin films can be fabricated on a copper support by using simple, commonplace paraffin wax under reaction conditions of Hot Filament Chemical Vapor Deposition (HFCVD). Surprisingly, even the presence of any catalyst or seeding that has been conventionally used in the state-of-the-art is not required. The structure of the obtained films was analyzed by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy and electron energy-loss spectroscopy recorded at the carbon K-edge region confirm the presence of nanocrystalline diamond. The process is a significant step towards cost-effective and non-cumbersome fabrication of nanocrystalline diamond thin films for commercial production.

  13. A new approach to grain boundary engineering for nanocrystalline materials

    PubMed Central

    Tsurekawa, Sadahiro; Watanabe, Tadao

    2016-01-01

    A new approach to grain boundary engineering (GBE) for high performance nanocrystalline materials, especially those produced by electrodeposition and sputtering, is discussed on the basis of some important findings from recently available results on GBE for nanocrystalline materials. In order to optimize their utility, the beneficial effects of grain boundary microstructures have been seriously considered according to the almost established approach to GBE. This approach has been increasingly recognized for the development of high performance nanocrystalline materials with an extremely high density of grain boundaries and triple junctions. The effectiveness of precisely controlled grain boundary microstructures (quantitatively characterized by the grain boundary character distribution (GBCD) and grain boundary connectivity associated with triple junctions) has been revealed for recent achievements in the enhancement of grain boundary strengthening, hardness, and the control of segregation-induced intergranular brittleness and intergranular fatigue fracture in electrodeposited nickel and nickel alloys with initial submicrometer-grained structure. A new approach to GBE based on fractal analysis of grain boundary connectivity is proposed to produce high performance nanocrystalline or submicrometer-grained materials with desirable mechanical properties such as enhanced fracture resistance. Finally, the potential power of GBE is demonstrated for high performance functional materials like gold thin films through precise control of electrical resistance based on the fractal analysis of the grain boundary microstructure. PMID:28144533

  14. Nanocrystalline cellulose with various contents of sulfate groups.

    PubMed

    Voronova, M I; Surov, O V; Zakharov, A G

    2013-10-15

    Properties of films derived from aqueous nanocrystalline cellulose dispersions by water evaporation depend on concentration of sulfate groups. Namely type of thermodestruction and surface morphology change as a function of contents of sulfate groups. Surface roughness increases and water adsorption enhances with increasing sulfate groups content particularly at high relative pressure.

  15. A new approach to grain boundary engineering for nanocrystalline materials.

    PubMed

    Kobayashi, Shigeaki; Tsurekawa, Sadahiro; Watanabe, Tadao

    2016-01-01

    A new approach to grain boundary engineering (GBE) for high performance nanocrystalline materials, especially those produced by electrodeposition and sputtering, is discussed on the basis of some important findings from recently available results on GBE for nanocrystalline materials. In order to optimize their utility, the beneficial effects of grain boundary microstructures have been seriously considered according to the almost established approach to GBE. This approach has been increasingly recognized for the development of high performance nanocrystalline materials with an extremely high density of grain boundaries and triple junctions. The effectiveness of precisely controlled grain boundary microstructures (quantitatively characterized by the grain boundary character distribution (GBCD) and grain boundary connectivity associated with triple junctions) has been revealed for recent achievements in the enhancement of grain boundary strengthening, hardness, and the control of segregation-induced intergranular brittleness and intergranular fatigue fracture in electrodeposited nickel and nickel alloys with initial submicrometer-grained structure. A new approach to GBE based on fractal analysis of grain boundary connectivity is proposed to produce high performance nanocrystalline or submicrometer-grained materials with desirable mechanical properties such as enhanced fracture resistance. Finally, the potential power of GBE is demonstrated for high performance functional materials like gold thin films through precise control of electrical resistance based on the fractal analysis of the grain boundary microstructure.

  16. Fatigue stress concentration and notch sensitivity in nanocrystalline metals

    DOE PAGES

    Furnish, Timothy A.; Boyce, Brad L.; Sharon, John A.; ...

    2016-03-11

    Recent studies have shown the potential for nanocrystalline metals to possess excellent fatigue resistance compared to their coarse-grained counterparts. Although the mechanical properties of nanocrystalline metals are believed to be particularly susceptible to material defects, a systematic study of the effects of geometric discontinuities on their fatigue performance has not yet been performed. In the present work, nanocrystalline Ni–40 wt%Fe containing both intrinsic and extrinsic defects were tested in tension–tension fatigue. The defects were found to dramatically reduce the fatigue resistance, which was attributed to the relatively high notch sensitivity in the nanocrystalline material. Microstructural analysis within the crack-initiation zonesmore » underneath the defects revealed cyclically-induced abnormal grain growth (AGG) as a predominant deformation and crack initiation mechanism during high-cycle fatigue. Furthermore, the onset of AGG and the ensuing fracture is likely accelerated by the stress concentrations, resulting in the reduced fatigue resistance compared to the relatively defect-free counterparts.« less

  17. Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.

    PubMed

    Boland, Jessica L; Casadei, Alberto; Tütüncüoglu, Gözde; Matteini, Federico; Davies, Christopher L; Jabeen, Fauzia; Joyce, Hannah J; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

    2016-04-26

    Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18) cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers.

  18. P-Type Zno:. as Obtained by Ion Implantation of AS+ with Post-Implantation Annealing in Oxygen Radicals

    NASA Astrophysics Data System (ADS)

    Georgobiani, A. N.; Demin, V. I.; Kotlyarevsky, M. B.; Rogozin, I. V.; Marakhovsky, A. V.

    2004-07-01

    Zinc oxide is the promising material for creation of the new generation of detectors for particle physics and radiation dosimetry. It has been shown that ion implantation of arsenic into zinc oxide film (arsenic is an acceptor impurity in ZnO) can result in formation of the p-type conductivity only in case of annealing in the flux of atomic oxygen. The ion implantation and the following annealing had influenced not only electrical properties of ZnO:As+ layers, but also their photoluminescence spectra. The ultraviolet luminescence band with the maximum at 3.33. eV corresponding to the AsO acceptor center had been clearly observed in the spectra of ZnO films implanted by As+ ions. The optimal temperature range of annealing in the atomic oxygen flux, required for obtaining of p-type conductivity in ZnO films, had been determined.

  19. Optical properties of antimony-doped p-type ZnO films fabricated by pulsed laser deposition

    SciTech Connect

    Pan, X. H.; Guo, W.; Pan, X. Q.; Ye, Z. Z.; He, H. P.; Liu, B.; Che, Y.

    2009-06-01

    We investigated optical properties of Sb-doped p-type ZnO films grown on n-Si (100) substrates by oxygen plasma-assisted pulsed laser deposition. Two acceptor states, with the acceptor levels of 161 and 336 meV, are identified by well-resolved photoluminescence spectra. Under oxygen-rich conditions, the deep acceptor in Sb-doped ZnO film is Zn vacancy. The shallow acceptor is Sb{sub Zn}-2V{sub Zn} complex induced by Sb doping. The origin of p-type behavior in Sb-doped ZnO has been ascribed to the formation of Sb{sub Zn}-2V{sub Zn} complex.

  20. Pore size modulation in electrochemically etched macroporous p-type silicon monitored by FFT impedance spectroscopy and Raman scattering.

    PubMed

    Quiroga-González, Enrique; Carstensen, Jürgen; Glynn, Colm; O'Dwyer, Colm; Föll, Helmut

    2014-01-07

    The understanding of the mechanisms of macropore formation in p-type Si with respect to modulation of the pore diameter is still in its infancy. In the present work, macropores with significantly modulated diameters have been produced electrochemically in p-type Si. The effect of the current density and the amount of surfactant in the etching solution are shown to influence the modulation in pore diameter and morphology. Data obtained during the etching process by in situ FFT impedance spectroscopy correlate the pore diameter variation with certain time constants found in the kinetics of the dissolution process. Raman scattering and electron microscopy confirm the mesoscopic structure and roughening of the pore walls. Spectroscopic and microscopic methods confirm that the pore wall morphology is correlated with the conditions of pore modulation.

  1. Search for Pauli exclusion principle violating atomic transitions and electron decay with a p-type point contact germanium detector

    SciTech Connect

    Abgrall, N.; Arnquist, I. J.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Caldwell, A. S.; Chan, Y. -D.; Christofferson, C. D.; Chu, P. -H.; Cuesta, C.; Detwiler, J. A.; Dunagan, C.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Finnerty, P. S.; Galindo-Uribarri, A.; Gilliss, T.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Orrell, J. L.; O’Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Shanks, B.; Shirchenko, M.; Suriano, A. M.; Tedeschi, D.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C. -H.; Yumatov, V.; Zhitnikov, I.

    2016-11-11

    A search for Pauli-exclusion-principle-violating K electron transitions was performed using 89.5 kg-d of data collected with a p-type point contact high-purity germanium detector operated at the Kimballton Underground Research Facility. A lower limit on the transition lifetime of s at 90% C.L. was set by looking for a peak at 10.6 keV resulting from the X-ray and Auger electrons present following the transition. A similar analysis was done to look for the decay of atomic K-shell electrons into neutrinos, resulting in a lower limit of s at 90% C.L. It is estimated that the Majorana Demonstrator, a 44 kg array of p-type point contact detectors that will search for the neutrinoless double-beta decay of Ge, could improve upon these exclusion limits by an order of magnitude after three years of operation.

  2. Gas sensing properties and p-type response of ALD TiO2 coated carbon nanotubes.

    PubMed

    Marichy, Catherine; Donato, Nicola; Latino, Mariangela; Willinger, Marc Georg; Tessonnier, Jean-Philippe; Neri, Giovanni; Pinna, Nicola

    2015-01-16

    Amorphous titanium dioxide-coated carbon nanotubes (CNTs) were prepared by atomic layer deposition (ALD) and investigated as sensing layers for resistive NO2 and O2 gas sensors. By varying ALD process conditions and CNT structure, heterostructures with different metal oxide grain size, morphology and coating thickness were synthesized. Higher responses were observed with homogeneous and continuous 5.5 nm thick films onto CNTs at an operating temperature of 150 °C, while CNTs decorated with either discontinuous film or TiO2 nanoparticles showed a weak response close to the one of device made of bare CNTs. An unexpected p-type behavior in presence of the target gas was also noticed, independently of the metal oxide morphology and thickness. Based on previous works, hypotheses were made in order to explain the p-type behavior of TiO2/CNT sensors.

  3. Heavy p-type doping of ZnSe thin films using Cu2Se in pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaojun; Man Yu, Kin; Kronawitter, Coleman X.; Ma, Zhixun; Yu, Peter Y.; Mao, Samuel S.

    2012-07-01

    Undoped, Cu-doped, Se-enriched, and Cu2Se-doped ZnSe films have been grown on fused quartz substrates by pulsed laser deposition. While the other films are highly resistive, Cu2Se-doped ZnSe films are p-type conducting with hole concentrations of ˜1.1 × 1019 cm-3 and resistivities of ˜0.098 Ω cm (compared with previous reports of ˜1×1018 cm-3 and ˜0.75 Ω cm). The exceptional heavy p-type doping of ZnSe films can be attributed to substitution of Zn atoms with Cu while limiting selenium-vacancy-associated compensating defects with additional selenium. This work is of importance to solve doping difficulties and contact problems of wide-bandgap semiconductors.

  4. Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p -Type Few-Layer WSe2

    NASA Astrophysics Data System (ADS)

    Xu, Shuigang; Shen, Junying; Long, Gen; Wu, Zefei; Bao, Zhi-qiang; Liu, Cheng-Cheng; Xiao, Xiao; Han, Tianyi; Lin, Jiangxiazi; Wu, Yingying; Lu, Huanhuan; Hou, Jianqiang; An, Liheng; Wang, Yuanwei; Cai, Yuan; Ho, K. M.; He, Yuheng; Lortz, Rolf; Zhang, Fan; Wang, Ning

    2017-02-01

    We fabricate high-mobility p -type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level crossing effects at ultralow coincident angles, revealing that the Zeeman energy is about 3 times as large as the cyclotron energy near the valence band top at the Γ valley. This result implies the significant roles played by the exchange interactions in p -type few-layer WSe2 , in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe2 offers a unique platform with unusually heavy hole carriers and a substantially enhanced g factor for exploring strongly correlated phenomena.

  5. Effects of abnormal cell-to-cell interference on p-type floating gate and control gate NAND flash memory

    NASA Astrophysics Data System (ADS)

    Kim, Yong Jun; Kang, Jun Geun; Lee, Byungin; Cho, Gyu-Seog; Park, Sung-Kye; Choi, Woo Young

    2014-01-01

    Abnormal cell-to-cell interference occurring in NAND flash memory has been investigated. In the case of extremely downscaled NAND flash memory, cell-to-cell interference increases abnormally. The abnormal cell-to-cell interference has been observed in a p-type floating gate (FG)/control gate (CG) cells for the first time. It has been found that the depletion region variation leads to the abnormal cell-to-cell interference. The depletion region variation of FG and CG is determined by state of neighbor cells. The depletion region variation affects CG-to-FG coupling capacitance and threshold voltage variation (ΔVT). Finally, it is observed that there is a symmetrical relationship between n- and p-type FG/CG NAND flash memory in terms of cell-to-cell interference.

  6. Microstructural properties of phosphorus-doped p-type ZnO grown by radio-frequency magnetron sputtering

    SciTech Connect

    Oh, Min-Suk; Hwang, Dae-Kue; Choi, Yong-Seok; Kang, Jang-Won; Park, Seong-Ju; Hwang, Chi-Sun; Cho, Kyoung Ik

    2008-09-15

    Phosphorus (P)-doped ZnO thin films were grown by radio-frequency magnetron sputtering to study the microstructural properties of p-type ZnO. As-grown P-doped ZnO, a semi-insulator, was converted to p-type ZnO after being annealed at 800 deg. C in an N{sub 2} ambient. X-ray diffraction, secondary-ion-mass spectrometry, and Hall effect measurements indicated that P{sub 2}O{sub 5} phases in as-grown P-doped ZnO disappeared after thermal annealing to form a substitutional P at an O lattice site, which acts as an acceptor in P-doped ZnO. Transmission electron microscopy showed that the formation of stacking faults was facilitated to release the strain in P-doped ZnO during post-thermal annealing.

  7. Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide

    SciTech Connect

    Zhang, Hongliang; Du, Yingge; Papadogianni, Alexandra; Bierwagen, Oliver; Sallis, Shawn; Piper, Louis F. J.; Bowden, Mark E.; Shutthanandan, V.; Sushko, Petr; Chambers, Scott A.

    2015-09-16

    Transparent conducting oxides (TCOs) constitute a unique class of materials which combine the seemingly mutually exclusive properties of electrical conductivity and optical transparency in a single material. TCOs are useful for a wide range of applications including solar cells, displays, light emitting diodes and transparent electronics. Simple post-transition metal oxides such as ZnO, In2O3 and SnO2 are wide gap insulators in which the ionic character generates an oxygen 2p-derived valence band (VB) and a metal s-derived conduction band (CB), resulting in large optical band gaps (>3.0 eV) and excellent n-type conductivity when donor doped. In contrast, the development of efficient p-type TCOs remains a global materials challenge. Converting n-type oxides to p-type analogs by acceptor doping is extremely difficult and these materials display poor conductivity.

  8. GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency

    NASA Astrophysics Data System (ADS)

    Kim, Garam; Sun, Min-Chul; Kim, Jang Hyun; Park, Euyhwan; Park, Byung-Gook

    2017-01-01

    In order to improve the internal quantum efficiency of GaN-based LEDs, a LED structure featuring a p-type trench in the multi-quantum well (MQW) is proposed. This structure has effects on spreading holes into the MQW and reducing the quantum-confined stark effect (QCSE). In addition, two simple fabrication methods using electron-beam (e-beam) lithography or selective wet etching for manufacturing the p-type structure are also proposed. From the measurement results of the manufactured GaN-based LEDs, it is confirmed that the proposed structure using e-beam lithography or selective wet etching shows improved light output power compared to the conventional structure because of more uniform hole distribution. It is also confirmed that the proposed structure formed by e-beam lithography has a significant effect on strain relaxation and reduction in the QCSE from the electro-luminescence measurement.

  9. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

    PubMed Central

    Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

    2016-01-01

    A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm−3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab. PMID:27550805

  10. Hot Superplastic Powder Forging for Transparent nanocrystalline Ceramics

    SciTech Connect

    Cannon, W. Roger

    2006-05-22

    The program explored a completely new, economical method of manufacturing nanocrystalline ceramics, Hot Superplastic Powder Forging (HSPF). The goal of the work was the development of nanocrystalline/low porosity optically transparent zirconia/alumina. The high optical transparency should result from lack of grain boundary scattering since grains will be smaller than one tenth the wavelength of light and from elimination of porosity. An important technological potential for this process is manufacturing of envelopes for high-pressure sodium vapor lamps. The technique for fabricating monolithic nanocrystalline material does not begin with powder whose particle diameter is <100 nm as is commonly done. Instead it begins with powder whose particle diameter is on the order of 10-100 microns but contains nanocrystalline crystallites <<100 nm. Spherical particles are quenched from a melt and heat treated to achieve the desired microstructure. Under a moderate pressure within a die or a mold at temperatures of 1100C to 1300C densification is by plastic flow of superplastic particles. A nanocrystalline microstructure results, though some features are greater than 100nm. It was found, for instance, that in the fully dense Al2O3-ZrO2 eutectic specimens that a bicontinuous microstructure exists containing <100 nm ZrO2 particles in a matrix of Al2O3 grains extending over 1-2 microns. Crystallization, growth, phase development and creep during hot pressing and forging were studied for several compositions and so provided some details on development of polycrystalline microstructure from heating quenched ceramics.

  11. Metallic Hydrogen

    NASA Astrophysics Data System (ADS)

    Silvera, Isaac F.; Dias, Ranga; Noked, Ori; Salamat, Ashkan; Zaghoo, Mohamed

    2017-04-01

    One of the great challenges in condensed matter physics has been to produce metallic hydrogen (MH) in the laboratory. There are two approaches: solid molecular hydrogen can be compressed to high density at extreme pressures of order 5-6 megabars. The transition to MH should take place at low temperatures and is expected to occur as a structural first-order phase transition with dissociation of molecules into atoms, rather than the closing of a gap. A second approach is to produce dense molecular hydrogen at pressures of order 1-2 megabars and heat the sample. With increasing temperature, it was predicted that molecular hydrogen first melts and then dissociates to atomic metallic liquid hydrogen as a first-order phase transition. We have observed this liquid-liquid phase transition to metallic hydrogen, also called the plasma phase transition. In low-temperature studies, we have pressurized HD to over 3 megabars and observed two new phases. Molecular hydrogen has been pressurized to 4.2 megabars. A new phase transition has been observed at 3.55 megabars, but it is not yet metallic.

  12. p-type Li, Cu-codoped NiOx hole-transporting layer for efficient planar perovskite solar cells.

    PubMed

    Liu, Ming-Hua; Zhou, Zheng-Ji; Zhang, Pan-Pan; Tian, Qing-Wen; Zhou, Wen-Hui; Kou, Dong-Xing; Wu, Si-Xin

    2016-10-31

    p-type inorganic hole transport materials of Li, Cu-codoped NiOx films were deposited using a simple solution-based process. The as-prepared films were used as hole selective contacts for lead halide perovskite solar cell. An enhanced power conversion efficiency of 14.53% has been achieved due to the improved electrical conductivity and optical transmittance of the Li, Cu-codoped NiOx electrode interlayer.

  13. Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors

    SciTech Connect

    Szabo, L.F.; Biter, W.J.

    1988-04-05

    A photovolatic device is described comprising: a light transmissive substrate; an electrically conductive, transparent layer disposed on the substrate as a first electrode; a layer of a first semiconductor disposed on the first electrode; a p-type thin film of a tellurium-containing II-VI semiconductor disposed on the first semiconductor to form a photoresponsive junction with it; and a second electrode contacting the thin film.

  14. S-TYPE AND P-TYPE HABITABILITY IN STELLAR BINARY SYSTEMS: A COMPREHENSIVE APPROACH. II. ELLIPTICAL ORBITS

    SciTech Connect

    Cuntz, M.

    2015-01-10

    In the first paper of this series, a comprehensive approach has been provided for the study of S-type and P-type habitable regions in stellar binary systems, which was, however, restricted to circular orbits of the stellar components. Fortunately, a modest modification of the method also allows for the consideration of elliptical orbits, which of course entails a much broader range of applicability. This augmented method is presented here, and numerous applications are conveyed. In alignment with Paper I, the selected approach considers a variety of aspects, which comprise the consideration of a joint constraint including orbital stability and a habitable region for a possible system planet through the stellar radiative energy fluxes ({sup r}adiative habitable zone{sup ;} RHZ). The devised method is based on a combined formalism for the assessment of both S-type and P-type habitability; in particular, mathematical criteria are deduced for which kinds of systems S-type and P-type habitable zones are realized. If the RHZs are truncated by the additional constraint of orbital stability, the notation of ST-type and PT-type habitability applies. In comparison to the circular case, it is found that in systems of higher eccentricity, the range of the RHZs is significantly reduced. Moreover, for a considerable number of models, the orbital stability constraint also reduces the range of S-type and P-type habitability. Nonetheless, S-, P-, ST-, and PT-type habitability is identified for a considerable set of system parameters. The method as presented is utilized for BinHab, an online code available at The University of Texas at Arlington.

  15. Influence of hydrogen and hydrogen/methane plasmas on AlN thin films

    SciTech Connect

    Pobedinskas, P. Hardy, A.; Van Bael, M. K.; Haenen, K.; Degutis, G.; Dexters, W.

    2014-02-24

    Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E{sub 1}(TO) and E{sub 2}{sup 2} phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E{sub 1}(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E{sub 2}{sup 2} peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them.

  16. Theory of the Carrier Fermi Energy and Density of States of n- and p-TYPE SnTe

    NASA Astrophysics Data System (ADS)

    Das, R. K.; Mohapatro, S.

    In the present work we theoretically develop a kṡπ model to calculate the carrier electronic structure for both n- and p-type SnTe. Here π is the momentum operator in the presence of the spin-orbit interaction. The work is an extension of the theory developed for n- and p-PbTe earlier by one of the authors to evaluate the Fermi energy and the density of states (DOS). We consider a six-level energy basis for SnTe, as proposed by Bernick and Kleinman. One set of calculations was done by diagonalizing the kṡπ Hamiltonian matrix for the band-edge states and treating the far bands using perturbation theory. In the second set we have rediagonalized the kṡπ Hamiltonian matrix for the band edge states, treating the first diagonalization as the basis. The far bands are, as usual, included through perturbation. We have compared the results of both the sets. Results obtained for n- and p-type SnTe are also compared with that of n- and p-type PbTe. The similarities and contrasts are discussed. An indirect comparison with the DOS of the metallic tin suggests that the calculations are fairly reasonable. The results are also compared with some recent results for SnTe.

  17. Ultrasensitive Room-Temperature Operable Gas Sensors Using p-Type Na:ZnO Nanoflowers for Diabetes Detection.

    PubMed

    Jaisutti, Rawat; Lee, Minkyung; Kim, Jaeyoung; Choi, Seungbeom; Ha, Tae-Jun; Kim, Jaekyun; Kim, Hyoungsub; Park, Sung Kyu; Kim, Yong-Hoon

    2017-03-15

    Ultrasensitive room-temperature operable gas sensors utilizing the photocatalytic activity of Na-doped p-type ZnO (Na:ZnO) nanoflowers (NFs) are demonstrated as a promising candidate for diabetes detection. The flowerlike Na:ZnO nanoparticles possessing ultrathin hierarchical nanosheets were synthesized by a facile solution route at a low processing temperature of 40 °C. It was found that the Na element acting as a p-type dopant was successfully incorporated in the ZnO lattice. On the basis of the synthesized p-type Na:ZnO NFs, room-temperature operable chemiresistive-type gas sensors were realized, activated by ultraviolet (UV) illumination. The Na:ZnO NF gas sensors exhibited high gas response (S of 3.35) and fast response time (∼18 s) and recovery time (∼63 s) to acetone gas (100 ppm, UV intensity of 5 mW cm(-2)), and furthermore, subppm level (0.2 ppm) detection was achieved at room temperature, which enables the diagnosis of various diseases including diabetes from exhaled breath.

  18. ESR study of p-type natural 2H-polytype MoS2 crystals: The As acceptor activity

    NASA Astrophysics Data System (ADS)

    Stesmans, A.; Iacovo, S.; Afanas'ev, V. V.

    2016-10-01

    Low-temperature (T = 1.7-77 K) multi frequency electron spin resonance (ESR) study on p-type 2H-polytype geological MoS2 crystals reveals p-type doping predominantly originating from As atoms substituting for S sites in densities of (2.4 ± 0.2) × 1017 cm-3. Observation of a "half field"(g ˜ 3.88) signal firmly correlating with the central Zeeman As accepter signal indicates the presence of spin S > ½ As agglomerates, which together with the distinct multicomponent makeup of the Zeeman signal points to manifest non-uniform As doping; only ˜13% of the total As response originates from individual decoupled As dopants. From ESR monitoring the latter vs. T, an activation energy Ea = (0.7 ± 0.2) meV is obtained. This unveils As as a noticeable shallow acceptor dopant, appropriate for realization of effective p-type doping in targeted 2D MoS2-based switching devices.

  19. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

    NASA Astrophysics Data System (ADS)

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-06-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.

  20. Characterization of Al-As codoped p-type ZnO films by magnetron cosputtering deposition

    SciTech Connect

    Yun, Eui-Jung; Park, Hyeong-Sik; Lee, Kyu H.; Nam, Hyoung G.; Jung, Myunghee

    2008-04-01

    We report the preparation of Al-As codoped p-type ZnO films by rf magnetron cosputtering deposition. The p-type conductivity of the films was revealed by Hall measurements, x-ray photoelectron spectroscopy (XPS), and photoluminescence measurements after being annealed in O{sub 2}. It was observed by XPS that Al content increased with increasing AlAs target power from 80 to 160 W and reached a maximum value at an AlAs target power of 160 W. Hole concentration decreased with increasing Al content. With increasing AlAs target power greater than 160 W, the samples exhibit increases in As and O contents and decreases in Al and Zn contents, which contribute to the increase in hole concentration. A high hole concentration of 2.354x10{sup 20} cm{sup -3}, a low resistivity of 2.122x10{sup -2} {omega} cm, and a Hall mobility of 0.13 cm{sup 2}/V s for the films with high As content of 16.59% were obtained. XPS has also been used to address the unresolved issues related to the p-type formation mechanism of As-doped ZnO, supporting that the acceptor is As{sub Zn}-2V{sub Zn}.

  1. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

    PubMed Central

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-01-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors. PMID:27349378

  2. Thermoelectric properties of p-type PbTe/Ag{sub 2}Te bulk composites by extrinsic phase mixing

    SciTech Connect

    Lee, Min Ho; Rhyee, Jong-Soo

    2015-12-15

    We investigated the thermoelectric properties of PbTe/Ag{sub 2}Te bulk composites, synthesized by hand milling, mixing, and hot press sintering. From x-ray diffraction and energy dispersive x-ray spectroscopy measurements, we observed Ag{sub 2}Te phase separation in the PbTe matrix without Ag atom diffusion. In comparison with previously reported pseudo-binary (PbTe){sub 1−x}(Ag{sub 2}Te){sub x} composites, synthesized by high temperature phase separation, the PbTe/Ag{sub 2}Te bulk composites fabricated with a low temperature phase mixing process give rise to p-type conduction of carriers with significantly decreased electrical conductivity. This indicates that Ag atom diffusion in the PbTe matrix changes the sign of the Seebeck coefficient to n-type and also increases the carrier concentration. Effective p-type doping with low temperature phase separation by mixing and hot press sintering can enhance the thermoelectric performance of PbTe/Ag{sub 2}Te bulk composites, which can be used as a p-type counterpart of n-type (PbTe){sub 1−x}(Ag{sub 2}Te){sub x} bulk composites.

  3. MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

    PubMed

    Chuang, Steven; Battaglia, Corsin; Azcatl, Angelica; McDonnell, Stephen; Kang, Jeong Seuk; Yin, Xingtian; Tosun, Mahmut; Kapadia, Rehan; Fang, Hui; Wallace, Robert M; Javey, Ali

    2014-03-12

    The development of low-resistance source/drain contacts to transition-metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that the Fermi level of elemental metals is pinned close to the conduction band of MoS2, thus resulting in large Schottky barrier heights for holes with limited hole injection from the contacts. Here, we show that substoichiometric molybdenum trioxide (MoOx, x < 3), a high work function material, acts as an efficient hole injection layer to MoS2 and WSe2. In particular, we demonstrate MoS2 p-type field-effect transistors and diodes by using MoOx contacts. We also show drastic on-current improvement for p-type WSe2 FETs with MoOx contacts over devices made with Pd contacts, which is the prototypical metal used for hole injection. The work presents an important advance in contact engineering of TMDCs and will enable future exploration of their performance limits and intrinsic transport properties.

  4. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating.

    PubMed

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-06-28

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.

  5. a Novel Method to Synthesis of β-TCP/HA Biphasic Nanocrystalline Powder by Using Bovine Bone

    NASA Astrophysics Data System (ADS)

    Tavangarian, F.; Emadi, R.; Roohani Esfahani, S. I.

    Nanocrystalline biphasic calcium phosphate (BCP) powder was synthesized from natural bovine bone via a very economic process. The bovine bone was annealed at 900°C for 2 h and elemental compositions were qualitatively identified by energy dispersive X-ray spectroscopy (EDS) in the scanning electron microscope (SEM). The calcined bovine bone was powdered and mixed with calcium hydrogen phosphate dihydrate (CaHPO4·2H2O, DCPD). After that, the prepared powder was uniaxially pressed into pellets. The pellets were annealed at 900-1200°C and then crushed to obtain nanocrystalline BCP powder. The morphology and microstructure of the BCP powder were studied by SEM. The results showed that the prepared powder consisted of small size and highly agglomerated particles. X-ray diffraction method was utilized to characterize the phase formation and crystallite size of prepared powder. The crystallite sizes of BCP powder calculated by using XRD data were in the range of 20-60 nm.

  6. Theoretical Verification of Photoelectrochemical Water Oxidation Using Nanocrystalline TiO2 Electrodes.

    PubMed

    Yanagida, Shozo; Yanagisawa, Susumu; Yamashita, Koichi; Jono, Ryota; Segawa, Hiroshi

    2015-05-27

    Mesoscopic anatase nanocrystalline TiO2 (nc-TiO2) electrodes play effective and efficient catalytic roles in photoelectrochemical (PEC) H2O oxidation under short circuit energy gap excitation conditions. Interfacial molecular orbital structures of (H2O)3 &OH(TiO2)9H as a stationary model under neutral conditions and the radical-cation model of [(H2O)3&OH(TiO2)9H]+ as a working nc-TiO2 model are simulated employing a cluster model OH(TiO2)9H (Yamashita/Jono's model) and a H2O cluster model of (H2O)3 to examine excellent H2O oxidation on nc-TiO2 electrodes in PEC cells. The stationary model, (H2O)3&OH(TiO2)9H reveals that the model surface provides catalytic H2O binding sites through hydrogen bonding, van der Waals and Coulombic interactions. The working model, [(H2O)3&OH(TiO2)9H]+ discloses to have a very narrow energy gap (0.3 eV) between HOMO and LUMO potentials, proving that PEC nc-TiO2 electrodes become conductive at photo-irradiated working conditions. DFT-simulation of stepwise oxidation of a hydroxide ion cluster model of OH-(H2O)3, proves that successive two-electron oxidation leads to hydroxyl radical clusters, which should give hydrogen peroxide as a precursor of oxygen molecules. Under working bias conditions of PEC cells, nc-TiO2 electrodes are now verified to become conductive by energy gap photo-excitation and the electrode surface provides powerful oxidizing sites for successive H2O oxidation to oxygen via hydrogen peroxide.

  7. Development of Nanocrystalline Zeolite Materials for the Decontamination of Chemical Warfare Agents

    DTIC Science & Technology

    2008-11-17

    Adsorption and Reaction of the CWA Simulants, 2-CEES and DMMP on Nanocrystalline Zeolites, Decon2006 Conference, Westminster, Colorado, Nov. 2, 2006...oxides. For example, nanocrystalline MgO exhibits high reactivity for the dehydrochlorination of 2-CEES while microcrystalline MgO is unreactive(3...evolution of gas- phase products as a function of reaction time for 2-CEES oxidation on nanocrystalline NaZSM- 5. The observed products detected include

  8. Method to produce nanocrystalline powders of oxide-based phosphors for lighting applications

    DOEpatents

    Loureiro, Sergio Paulo Martins; Setlur, Anant Achyut; Williams, Darryl Stephen; Manoharan, Mohan; Srivastava, Alok Mani

    2007-12-25

    Some embodiments of the present invention are directed toward nanocrystalline oxide-based phosphor materials, and methods for making same. Typically, such methods comprise a steric entrapment route for converting precursors into such phosphor material. In some embodiments, the nanocrystalline oxide-based phosphor materials are quantum splitting phosphors. In some or other embodiments, such nanocrystalline oxide based phosphor materials provide reduced scattering, leading to greater efficiency, when used in lighting applications.

  9. Methods for preparation of nanocrystalline rare earth phosphates for lighting applications

    DOEpatents

    Comanzo, Holly Ann; Manoharan, Mohan; Martins Loureiro, Sergio Paulo; Setlur, Anant Achyut; Srivastava, Alok Mani

    2013-04-16

    Disclosed here are methods for the preparation of optionally activated nanocrystalline rare earth phosphates. The optionally activated nanocrystalline rare earth phosphates may be used as one or more of quantum-splitting phosphor, visible-light emitting phosphor, vacuum-UV absorbing phosphor, and UV-emitting phosphor. Also disclosed herein are discharge lamps comprising the optionally activated nanocrystalline rare earth phosphates provided by these methods.

  10. Mechanically Driven Grain Boundary Relaxation: A Mechanism for Cyclic Hardening in Nanocrystalline Ni

    DTIC Science & Technology

    2012-01-01

    nanocrystalline metals by dissipating energy and reducing the average atomic energy of the system, leading to higher strengths. The GB processes that...can relax the non-equilibrium grain boundary (GB) structures of nanocrystalline metals by dissipating energy and reducing the average atomic energy...simulations are used to show that cyclic mechanical loading can relax the non-equilibrium grain boundary (GB) structures of nanocrystalline metals by

  11. Light emission from conductive paths in nanocrystalline CdSe embedded Zr-doped HfO2 high-k stack

    NASA Astrophysics Data System (ADS)

    Lin, Chi-Chou; Kuo, Yue

    2015-03-01

    Electrical and optical properties of the solid state incandescent light emitting devices made of zirconium doped hafnium oxide high-k films with and without an embedded nanocrystalline CdSe layer on the p-type Si wafer have been studied. The broad band white light was emitted from nano sized conductive paths through the thermal excitation mechanism. Conductive paths formed from the dielectric breakdown have been confirmed from scanning electron microscopic and atomic force microscopic images and the secondary ion mass spectrometric elemental profiles. Si was diffused from the wafer to the device surface through the conductive path during the high temperature light emission process. There are many potential applications of this type of device.

  12. Galvanic deposition of nanocrystalline ZnO thin films from a ZnO-Zn(OH)(2) mixed phase precursor on p-Si substrate.

    PubMed

    Mukherjee, N; Bhattacharyya, P; Banerjee, M; Mondal, A; Gettens, Robert T T; Ghosh, P K; Saha, H

    2006-05-28

    A galvanic technique for the deposition of ZnO thin films is reported. The depositions were carried out on p-type single-crystal silicon substrates at room temperature, from a solution of ZnSO(4), where the Zn rod acted as a sacrificing anode and p-Si was the cathode. The deposition of ZnO by this method is pH sensitive, and a pH between 4 and 5 is found to be optimum for film deposition. This deposition technique is simple, inexpensive and can be carried out at room temperature. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies revealed the nanocrystalline structure of the films. The resistivity of the annealed ZnO films was determined by the Van der Pauw measurement technique.

  13. Light emission from conductive paths in nanocrystalline CdSe embedded Zr-doped HfO{sub 2} high-k stack

    SciTech Connect

    Lin, Chi-Chou; Kuo, Yue

    2015-03-23

    Electrical and optical properties of the solid state incandescent light emitting devices made of zirconium doped hafnium oxide high-k films with and without an embedded nanocrystalline CdSe layer on the p-type Si wafer have been studied. The broad band white light was emitted from nano sized conductive paths through the thermal excitation mechanism. Conductive paths formed from the dielectric breakdown have been confirmed from scanning electron microscopic and atomic force microscopic images and the secondary ion mass spectrometric elemental profiles. Si was diffused from the wafer to the device surface through the conductive path during the high temperature light emission process. There are many potential applications of this type of device.

  14. Extreme creep resistance in a microstructurally stable nanocrystalline alloy

    NASA Astrophysics Data System (ADS)

    Darling, K. A.; Rajagopalan, M.; Komarasamy, M.; Bhatia, M. A.; Hornbuckle, B. C.; Mishra, R. S.; Solanki, K. N.

    2016-09-01

    Nanocrystalline metals, with a mean grain size of less than 100 nanometres, have greater room-temperature strength than their coarse-grained equivalents, in part owing to a large reduction in grain size. However, this high strength generally comes with substantial losses in other mechanical properties, such as creep resistance, which limits their practical utility; for example, creep rates in nanocrystalline copper are about four orders of magnitude higher than those in typical coarse-grained copper. The degradation of creep resistance in nanocrystalline materials is in part due to an increase in the volume fraction of grain boundaries, which lack long-range crystalline order and lead to processes such as diffusional creep, sliding and rotation. Here we show that nanocrystalline copper-tantalum alloys possess an unprecedented combination of properties: high strength combined with extremely high-temperature creep resistance, while maintaining mechanical and thermal stability. Precursory work on this family of immiscible alloys has previously highlighted their thermo-mechanical stability and strength, which has motivated their study under more extreme conditions, such as creep. We find a steady-state creep rate of less than 10-6 per second—six to eight orders of magnitude lower than most nanocrystalline metals—at various temperatures between 0.5 and 0.64 times the melting temperature of the matrix (1,356 kelvin) under an applied stress ranging from 0.85 per cent to 1.2 per cent of the shear modulus. The unusual combination of properties in our nanocrystalline alloy is achieved via a processing route that creates distinct nanoclusters of atoms that pin grain boundaries within the alloy. This pinning improves the kinetic stability of the grains by increasing the energy barrier for grain-boundary sliding and rotation and by inhibiting grain coarsening, under extremely long-term creep conditions. Our processing approach should enable the development of

  15. Extreme creep resistance in a microstructurally stable nanocrystalline alloy.

    PubMed

    Darling, K A; Rajagopalan, M; Komarasamy, M; Bhatia, M A; Hornbuckle, B C; Mishra, R S; Solanki, K N

    2016-09-15

    Nanocrystalline metals, with a mean grain size of less than 100 nanometres, have greater room-temperature strength than their coarse-grained equivalents, in part owing to a large reduction in grain size. However, this high strength generally comes with substantial losses in other mechanical properties, such as creep resistance, which limits their practical utility; for example, creep rates in nanocrystalline copper are about four orders of magnitude higher than those in typical coarse-grained copper. The degradation of creep resistance in nanocrystalline materials is in part due to an increase in the volume fraction of grain boundaries, which lack long-range crystalline order and lead to processes such as diffusional creep, sliding and rotation. Here we show that nanocrystalline copper-tantalum alloys possess an unprecedented combination of properties: high strength combined with extremely high-temperature creep resistance, while maintaining mechanical and thermal stability. Precursory work on this family of immiscible alloys has previously highlighted their thermo-mechanical stability and strength, which has motivated their study under more extreme conditions, such as creep. We find a steady-state creep rate of less than 10(-6) per second-six to eight orders of magnitude lower than most nanocrystalline metals-at various temperatures between 0.5 and 0.64 times the melting temperature of the matrix (1,356 kelvin) under an applied stress ranging from 0.85 per cent to 1.2 per cent of the shear modulus. The unusual combination of properties in our nanocrystalline alloy is achieved via a processing route that creates distinct nanoclusters of atoms that pin grain boundaries within the alloy. This pinning improves the kinetic stability of the grains by increasing the energy barrier for grain-boundary sliding and rotation and by inhibiting grain coarsening, under extremely long-term creep conditions. Our processing approach should enable the development of

  16. Quantification of Grain Boundary Mediated Plasticity Mechanisms in Nanocrystalline Metals

    NASA Astrophysics Data System (ADS)

    Panzarino, Jason F.

    Nanocrystalline metals have been a topic of great discussion over recent years due to their exceptional strengths and novel grain boundary-mediated deformation mechanisms. Their microstructures are known to evolve through dynamic processes such as grain boundary migration and grain rotation, but how the collective interaction of these mechanisms alter the microstructure on a larger scale is not completely understood. In this thesis, we present coupled atomistic modeling and experimental tasks that aim to understand how the grain structure, grain boundaries, and associated grain boundary network change during nanocrystalline plasticity. Due to the complex three-dimensional nature of these mechanisms and the limited spatial and temporal resolution of current in-situ experimental techniques, we turn to atomistic modeling to help understand the dynamics by which these mechanisms unfold. In order to provide a quantitative analysis of this behavior, we develop a tool which fully characterizes nanocrystalline microstructures in atomistic models and subsequently tracks their evolution during molecular dynamics simulations. We then use this algorithm to quantitatively track grain structure and boundary network evolution in plastically deformed nanocrystalline Al, finding that higher testing temperature and smaller average grain size results in increased evolution of grain structure with evidence of larger scale changes to the grain boundary network also taking place. This prompts us to extend our analysis technique to include full characterization of grain boundary networks and rigorous topographical feature identification. We then employ this tool on simulations of Al subject to monotonic tension, cycling loading, and simple annealing, and find that each case results in different evolution of the grain boundary network. Finally, our computational work is complemented synergistically by experimental analyses which track surface microstructure evolution during sliding wear

  17. Characterization of thermal sprayed nanostructured WC-Co coatings derived from nanocrystalline WC-18wt.%Co powders

    NASA Astrophysics Data System (ADS)

    Ban, Z.-G.; Shaw, L. L.

    2003-03-01

    Nanostructured WC-Co coatings were synthesized using high velocity oxygen fuel (HVOF) thermal spray. The nanocrystalline feedstock powder with a nominal composition of WC-18 wt.%Co was prepared using the novel integrated mechanical and thermal activation (IMTA) process. The effects of HVOF thermal spray conditions and powder characteristics on the microstructure and mechanical properties of the as-sprayed WC-Co coatings were studied. It was found that the ratio of oxygen-to-hydrogen flow rate (ROHFR) and the starting powder microstructures had strong effects on decarburization of the nano-coatings. Decarburization was significantly suppressed at low ROHFR and with the presence of free carbon in the powder. The level of porosity in the coatings was correlated with the powder microstructure and spray process conditions. The coating sprayed at ROHFR=0.5 exhibited the highest microhardness value (HV300g=1077), which is comparable to that of conventional coarse-grained coatings.

  18. High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

    NASA Astrophysics Data System (ADS)

    Darbari, S.; Shahmohammadi, M.; Mortazavi, M.; Mohajerzadeh, S.; Abdi, Y.; Robertson, M.; Morrison, T.

    2011-09-01

    A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

  19. The role of nanoscale defect features in enhancing the thermoelectric performance of p-type nanostructured SiGe alloys.

    PubMed

    Bathula, Sivaiah; Jayasimhadri, M; Gahtori, Bhasker; Singh, Niraj Kumar; Tyagi, Kriti; Srivastava, A K; Dhar, Ajay

    2015-08-07

    Despite SiGe being one of the most widely studied thermoelectric materials owing to its application in radioisotope thermoelectric generators (RTG), the thermoelectric figure-of merit (ZT) of p-type SiGe is still quite low, resulting in poor device efficiencies. In the present study, we report a substantial enhancement in ZT∼ 1.2 at 900 °C for p-type nanostructured Si80Ge20 alloys by creating several types of defect features within the Si80Ge20 nanostructured matrix in a spectrum of nano to meso-scale dimensions during its nanostructuring, by employing mechanical alloying followed by spark plasma sintering. This enhancement in ZT, which is ∼25% over the existing state-of-the-art value for a p-type nanostructured Si80Ge20 alloy, is primarily due to its ultralow thermal conductivity of ∼2.04 W m(-1) K(-1) at 900 °C, resulting from the scattering of low-to-high wavelength heat-carrying phonons by different types of defect features in a range of nano to meso-scale dimensions in the Si80Ge20 nanostructured matrix. These include point defects, dislocations, isolated amorphous regions, nano-scale grain boundaries and more importantly, the nano to meso-scale residual porosity distributed throughout the Si80Ge20 matrix. These nanoscale multi-dimensional defect features have been characterized by employing scanning and transmission electron microscopy and correlated with the electrical and thermal transport properties, based on which the enhancement of ZT has been discussed.

  20. Design of ternary alkaline-earth metal Sn(II) oxides with potential good p-type conductivity

    SciTech Connect

    Du, Mao -Hua; Singh, David J.; Zhang, Lijun; Li, Yuwei; Xu, Qiaoling; Ma, Yanming; Zheng, Weitao

    2016-04-19

    Oxides with good p-type conductivity have been long sought after to achieve high performance all-oxide optoelectronic devices. Divalent Sn(II) based oxides are promising candidates because of their rather dispersive upper valence bands caused by the Sn-5s/O-2p anti-bonding hybridization. There are so far few known Sn(II) oxides being p-type conductive suitable for device applications. Here, we present via first-principles global optimization structure searches a material design study for a hitherto unexplored Sn(II)-based system, ternary alkaline-earth metal Sn(II) oxides in the stoichiometry of MSn2O3 (M = Mg, Ca, Sr, Ba). We identify two stable compounds of SrSn2O3 and BaSn2O3, which can be stabilized by Sn-rich conditions in phase stability diagrams. Their structures follow the Zintl behaviour and consist of basic structural motifs of SnO3 tetrahedra. Unexpectedly they show distinct electronic properties with band gaps ranging from 1.90 (BaSn2O3) to 3.15 (SrSn2O3) eV, and hole effective masses ranging from 0.87 (BaSn2O3) to above 6.0 (SrSn2O3) m0. Further exploration of metastable phases indicates a wide tunability of electronic properties controlled by the details of the bonding between the basic structural motifs. Lastly, this suggests further exploration of alkaline-earth metal Sn(II) oxides for potential applications requiring good p-type conductivity such as transparent conductors and photovoltaic absorbers.

  1. Design of ternary alkaline-earth metal Sn(II) oxides with potential good p-type conductivity

    DOE PAGES

    Du, Mao -Hua; Singh, David J.; Zhang, Lijun; ...

    2016-04-19

    Oxides with good p-type conductivity have been long sought after to achieve high performance all-oxide optoelectronic devices. Divalent Sn(II) based oxides are promising candidates because of their rather dispersive upper valence bands caused by the Sn-5s/O-2p anti-bonding hybridization. There are so far few known Sn(II) oxides being p-type conductive suitable for device applications. Here, we present via first-principles global optimization structure searches a material design study for a hitherto unexplored Sn(II)-based system, ternary alkaline-earth metal Sn(II) oxides in the stoichiometry of MSn2O3 (M = Mg, Ca, Sr, Ba). We identify two stable compounds of SrSn2O3 and BaSn2O3, which can bemore » stabilized by Sn-rich conditions in phase stability diagrams. Their structures follow the Zintl behaviour and consist of basic structural motifs of SnO3 tetrahedra. Unexpectedly they show distinct electronic properties with band gaps ranging from 1.90 (BaSn2O3) to 3.15 (SrSn2O3) eV, and hole effective masses ranging from 0.87 (BaSn2O3) to above 6.0 (SrSn2O3) m0. Further exploration of metastable phases indicates a wide tunability of electronic properties controlled by the details of the bonding between the basic structural motifs. Lastly, this suggests further exploration of alkaline-earth metal Sn(II) oxides for potential applications requiring good p-type conductivity such as transparent conductors and photovoltaic absorbers.« less

  2. Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II-VI Nanostructures.

    PubMed

    Xia, Feifei; Shao, Zhibin; He, Yuanyuan; Wang, Rongbin; Wu, Xiaofeng; Jiang, Tianhao; Duhm, Steffen; Zhao, Jianwei; Lee, Shuit-Tong; Jie, Jiansheng

    2016-11-22

    Wide band gap II-VI nanostructures are important building blocks for new-generation electronic and optoelectronic devices. However, the difficulty of realizing p-type conductivity in these materials via conventional doping methods has severely handicapped the fabrication of p-n homojunctions and complementary circuits, which are the fundamental components for high-performance devices. Herein, by using first-principles density functional theory calculations, we demonstrated a simple yet efficient way to achieve controlled p-type doping on II-VI nanostructures via surface charge transfer doping (SCTD) using high work function transition metal oxides such as MoO3, WO3, CrO3, and V2O5 as dopants. Our calculations revealed that these oxides were capable of drawing electrons from II-VI nanostructures, leading to accumulation of positive charges (holes injection) in the II-VI nanostructures. As a result, Fermi levels of the II-VI nanostructures were shifted toward the valence band regions after surface modifications, along with the large enhancement of work functions. In situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy characterizations verified the significant interfacial charge transfer between II-VI nanostructures and surface dopants. Both theoretical calculations and electrical transfer measurements on the II-VI nanostructure-based field-effect transistors clearly showed the p-type conductivity of the nanostructures after surface modifications. Strikingly, II-VI nanowires could undergo semiconductor-to-metal transition by further increasing the SCTD level. SCTD offers the possibility to create a variety of electronic and optoelectronic devices from the II-VI nanostructures via realization of complementary doping.

  3. Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates

    NASA Technical Reports Server (NTRS)

    Chen, R. T.

    1983-01-01

    Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

  4. Enhanced in-plane thermoelectric figure of merit in p-type SiGe thin films by nanograin boundaries

    NASA Astrophysics Data System (ADS)

    Lu, Jianbiao; Guo, Ruiqiang; Dai, Weijing; Huang, Baoling

    2015-04-01

    P-Type polycrystalline silicon-germanium (SiGe) thin films are grown by low-pressure chemical vapor deposition (LPCVD) and their thermoelectric properties are characterized from 120 K to 300 K for potential application in integrated microscale cooling. The naturally formed grain boundaries are found to play a crucial role in determining both the charge and thermal transport properties of the films. Particularly, the grain boundaries create energy barriers for charge transport which lead to different dependences of charge mobility on doping concentration and temperature from the bulk counterparts. Meanwhile, the unique columnar grain structures result in remarkable thermal conductivity anisotropy with the in-plane thermal conductivities of SiGe films about 50% lower than the cross-plane values. By optimizing the growth conditions and doping level, a high in-plane figure of merit (ZT) of 0.2 for SiGe films is achieved at 300 K, which is about 100% higher than the previous record for p-type SiGe alloys, mainly due to the significant reduction in the in-plane thermal conductivity caused by nanograin boundaries. The low cost and excellent scalability of LPCVD render these high-performance SiGe films ideal candidates for thin-film thermoelectric applications.P-Type polycrystalline silicon-germanium (SiGe) thin films are grown by low-pressure chemical vapor deposition (LPCVD) and their thermoelectric properties are characterized from 120 K to 300 K for potential application in integrated microscale cooling. The naturally formed grain boundaries are found to play a crucial role in determining both the charge and thermal transport properties of the films. Particularly, the grain boundaries create energy barriers for charge transport which lead to different dependences of charge mobility on doping concentration and temperature from the bulk counterparts. Meanwhile, the unique columnar grain structures result in remarkable thermal conductivity anisotropy with the in

  5. Laser drilling induced electrical type inversion in vacancy-doped p-type HgCdTe

    NASA Astrophysics Data System (ADS)

    Zha, F. X.; Zhou, S. M.; Ma, H. L.; Yin, F.; Zhang, B.; Li, T. X.; Shao, J.; Shen, X. C.

    2008-10-01

    Femtosecond laser was used to generate micrometer-sized holes in vacancy-doped p type mercury cadmium telluride (HgCdTe). Characterization by laser beam induced current (LBIC) microscope shows obvious electrical type inversion around each hole. Both the intensity of the LBIC signals and the spatial dimension of the type-inversed regions are well comparable with those of n-on-p HgCdTe photodiodes formed by the conventional ion milling technique. The observation demonstrates the potential of laser drilling to be a new tool in fabricating HgCdTe photodiode arrays.

  6. Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide

    NASA Astrophysics Data System (ADS)

    Ling, C. C.; Lui, M. K.; Ma, S. K.; Chen, X. D.; Fung, S.; Beling, C. D.

    2004-07-01

    Acceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS). Because of its high concentration and low ionization energy, a level at EV+34meV is found to be the important acceptor responsible for the p-type conduction of the samples. Two different kinds of VGa-related defects (lifetimes of 280ps and 315ps, respectively) having different microstructures were characterized by PLS. By comparing their annealing behaviors and charge state occupancies, the EV+34meV level could not be related to the two VGa-related defects.

  7. Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint

    SciTech Connect

    Goodrich, A.; Woodhouse, M.; Hacke, P.

    2012-06-01

    Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

  8. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    NASA Astrophysics Data System (ADS)

    Gan, Li-Yong; Zhang, Qingyun; Cheng, Yingchun; Schwingenschlögl, Udo

    2013-12-01

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  9. Development of p-type CCD for the NeXT: the next Japanese x-ray astronomical satellite mission

    NASA Astrophysics Data System (ADS)

    Ozawa, Hideki; Tohiguchi, Masakuni; Matsuura, Daisuke; Miyata, Emi; Tsunemi, Hiroshi; Takagi, Shin-ichiro; Inui, Tatsuya; Tsuru, Takeshi Go; Kamata, Yukiko; Nakaya, Hidehiko; Miyazaki, Satoshi; Miyaguchi, Kazuhisa; Muramatsu, Masaharu; Suzuki, Hisanori

    2006-06-01

    The next Japanese X-ray astronomical satellite mission, NeXT, was proposed to ISAS/JAXA following the Astro-E2 Suzaku satellite which was launched in July 2005. We develop an X-ray CCD camera system, SXI (Soft X-ray Imager), for NeXT. The Hard X-ray Telescope (HXT) onboard NeXT provides imaging capability up to 80 keV, using the multilayer-coated X-ray mirror technology, called "Supermirror", newly developed in Japan. SXI is one of the focal plane detectors of HXT, which covers the soft energy band in the 0.5-12 keV in the baseline and 0.3-25 keV in the goal. We develop p-type CCDs for the baseline of SXI because p-type CCDs have been successfully used for previous X-ray astronomical satellites. We developed a prototype of a p-type CCD for SXI, called "CCD-NeXT1". CCD-NeXT1 is a frame-transfer CCD with two readout nodes. The image area of CCD-NeXT1 consists of 2Kx2K pixels with a pixel size of 12 μm x 12 μm. We evaluated performance of CCD-NeXT1 devices, KG-4 and KG-5. The energy resolution was 141.8+/-0.6 eV full width at half maximum at 5.9 keV, the readout noise was 4.7+/-0.2 e -, the horizontal CTI was < 5.1 x 10 -7, and the vertical CTI was < 2.4 x 10 -7 for KG-5. The performance of KG-4 was more or less the same as that of KG-5. The thickness of the depletion layer was 82+/-7 μm for KG-4 and 76+/-6 μm for KG-5. We conclude that our technology for p-type CCDs is sufficient to satisfy the CCD performance for the baseline of SXI.

  10. Close-geometry efficiency calibration of p-type HPGe detectors with a Cs-134 point source.

    PubMed

    DeFelice, P; Fazio, A; Vidmar, T; Korun, M

    2006-01-01

    When close-geometry detector calibration is required in gamma-ray spectrometry, single-line emitters are usually used in order to avoid true coincidence summing effects. We managed to overcome this limitation by developing a method for the determination of the efficiency of p-type HPGe detectors in close-geometry with a calibrated Cs-134 point source. No separate determination of coincidence summing correction factors is required and a single measurement furnishes the full-energy-peak efficiencies in the 475-1365 keV energy range.

  11. Origins of shallow level and hole mobility in codoped p-type ZnO thin films

    NASA Astrophysics Data System (ADS)

    Ye, H. B.; Kong, J. F.; Shen, W. Z.; Zhao, J. L.; Li, X. M.

    2007-03-01

    A combination study of structural, optical, and electrical properties has been carried out on N-In codoped p-type ZnO thin films for the origins of shallow level and hole mobility. The observed small activation energy of ˜20meV for the hole concentration corresponds well to the results from photoluminescence and conductivity data, revealing the grain boundary trapping nature of the shallow level. The achieved hole mobility is mainly due to the lack of grain boundary barrier effect, and the codoping yielded weak ionized impurity scattering. The authors have also revealed the scattering and conduction mechanisms in these p-ZnO films.

  12. Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature

    SciTech Connect

    Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo; Park, Sang-Hee Ko; Hwang, Chi-Sun

    2010-05-10

    Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

  13. Storing Hydrogen

    SciTech Connect

    Kim, Hyun Jeong; Karkamkar, Abhijeet J.; Autrey, Thomas; Chupas, Peter; Proffen, Thomas E.

    2010-05-31

    Researchers have been studying mesoporous materials for almost two decades with a view to using them as hosts for small molecules and scaffolds for molding organic compounds into new hybrid materials and nanoparticles. Their use as potential storage systems for large quantities of hydrogen has also been mooted. Such systems that might hold large quantities of hydrogen safely and in a very compact volume would have enormous potential for powering fuel cell vehicles, for instance. A sponge-like form of silicon dioxide, the stuff of sand particles and computer chips, can soak up and store other compounds including hydrogen. Studies carried out at the XOR/BESSRC 11-ID-B beamline at the APS have revealed that the nanoscopic properties of the hydrogenrich compound ammonia borane help it store hydrogen more efficiently than usual. The material may have potential for addressing the storage issues associated with a future hydrogen economy. Pacific Northwest National Laboratory is operated by Battelle for the US Department of Energy.

  14. Determination of the Origin of Crystal Orientation for Nanocrystalline Bismuth Telluride-Based Thin Films Prepared by Use of the Flash Evaporation Method

    NASA Astrophysics Data System (ADS)

    Takashiri, M.; Tanaka, S.; Miyazaki, K.

    2014-06-01

    We have investigated the origin of crystal orientation for nanocrystalline bismuth telluride-based thin films. Thin films of p-type bismuth telluride antimony (Bi-Te-Sb) and n-type bismuth telluride selenide (Bi-Te-Se) were fabricated by a flash evaporation method, with exactly the same deposition conditions except for the elemental composition of the starting powders. For p-type Bi-Te-Sb thin films the main x-ray diffraction (XRD) peaks were from the c-axis (Σ{00l}/Σ{ hkl} = 0.88) whereas n-type Bi-Te-Se thin films were randomly oriented (Σ{00l}/Σ{ hkl} = 0.40). Crystal orientation, crystallinity, and crystallite size were improved for both types of thin film by sintering. For p-type Bi-Te-Sb thin films, especially, high-quality structures were obtained compared with those of n-type Bi-Te-Se thin films. We also estimated the thermoelectric properties of the as-grown and sintered thin films. The power factor was enhanced by sintering; maximum values were 34.9 μW/cm K2 for p-type Bi-Te-Sb thin films at a sintering temperature of 300°C and 23.9 μW/cm K2 for n-type Bi-Te-Se thin films at a sintering temperature of 350°C. The exact mechanisms of film growth are not yet clear but we deduce the crystal orientation originates from the size of nano-clusters generated on the tungsten boat during flash evaporation.

  15. Enhancement of Strength and Ductility in Bulk Nanocrystalline Metals

    SciTech Connect

    Nieh, T; Schuh, C A; Caturla, M J; Hodge, A M

    2004-02-17

    The purpose of this project is to develop a robust scientific and technological framework for the design of high-strength and -ductility nanocrystalline materials for applications of technical importance to the Laboratory. The project couples theory and experiments with an emphasis on materials of macroscopic dimensions (mm to cm) that are composed of nanoscale (<100 nm) grains. There are four major tasks: (1) synthesize nanocrystalline materials with grain size in the 5- to 100-nm range; (2) conduct experimental studies to probe mechanisms of mechanical deformation and failure; (3) use large-scale simulation modeling technologies to provide insight to deformation mechanisms that may not be observable experimentally; and (4) check the results obtained from modeling, comparing experimental observations with results obtained from atomistic and dislocation-based simulations. This project supports efforts within the Stockpile Stewardship Program (SSP) to understand and predict properties of metals such as strength and ductility.

  16. Nanocrystalline NiAl Coating Prepared by HVOF Thermal Spraying

    NASA Astrophysics Data System (ADS)

    Enayati, M. H.; Karimzadeh, F.; Tavoosi, M.; Movahedi, B.; Tahvilian, A.

    2011-03-01

    Nanocrystalline NiAl intermetallic powder was prepared by mechanical alloying (MA) of Ni50Al50 powder mixture and then deposited on low carbon steel substrates by high velocity oxy fuel (HVOF) thermal spray technique using two sets of spraying parameters. X-ray diffraction (XRD), scanning electron microscopy (SEM), transition electron microscopy (TEM), differential scanning calorimetry (DSC), and hardness test were used to characterize the prepared powders and coatings. The MA of Ni50Al50 powder mixture led to the formation of NiAl intermetallic compound. The resulting powder particles were three dimensional in nature with irregular morphology and a crystallite size of ~10 nm. This powder was thermally sprayed by HVOF technique to produce coating. The deposited coating had a nanocrystalline structure with low oxide and porosity contents. The hardness of coatings was in the range of 5.40-6.08 GPa, which is higher than that obtained for NiAl coating deposited using conventional powders.

  17. Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

    NASA Astrophysics Data System (ADS)

    Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

    2013-07-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics.

  18. Laser-induced refractive index changes in nanocrystalline diamond membranes.

    PubMed

    Preclíková, Jana; Kromka, Alexander; Rezek, Bohuslav; Malý, Petr

    2010-02-15

    We have observed what we believe to be a new phenomenon in nanocrystalline diamond membranes. The optical thickness of the membrane is changed under laser irradiation, which leads to a spectral shift of interference fringes in the transmission and photoluminescence spectra of high-quality thin self-supporting nanocrystalline membranes. The direction of the spectral shift (red/blue) can be tuned by the ambient air pressure. The effect is reversible and is accompanied by changes in photoluminescence intensity. We interpret the results in terms of the changes in the index of refraction caused by the photoinduced adsorption/desorption of air molecules that subsequently affect the properties of subgap energy states related to the surface and the grain boundaries of the nanocrystals.

  19. Construction, application and biosafety of silver nanocrystalline chitosan wound dressing.

    PubMed

    Lu, Shuangyun; Gao, Wenjuan; Gu, Hai Ying

    2008-08-01

    A novel wound dressing composed of nano-silver and chitosan was fabricated using a nanometer and self-assembly technology. Sterility and pyrogen testing assessed biosafety, and efficacy was evaluated using Sprague-Dawley rats with deep partial-thickness wounds. Silver sulfadiazine and chitosan film dressings were used as controls. At intervals wound areas were measured, wound tissues biopsied and blood samples taken. Compared with the controls, the silver nanocrystalline chitosan dressing significantly (p<0.01) increased the rate of wound healing and was associated with silver levels in blood and tissues lower than levels associated with the silver sulfadiazine dressing (p<0.01). Sterility and pyrogen tests of the silver nanocrystalline chitosan dressing were negative. Thus this dressing should have wide application in clinical settings.

  20. Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

    PubMed Central

    Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

    2013-01-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

  1. Magnetic anisotropy of grain boundaries in nanocrystalline Ni

    NASA Astrophysics Data System (ADS)

    Bian, Q.; Niewczas, M.

    2017-01-01

    Temperature-dependent magnetic anisotropy due to grain boundaries in nanocrystalline Ni has been studied by simulating experimental magnetization data with the stochastic Landau-Lifshitz-Gilbert theory. In the model the grain boundary magnetic anisotropy energy is expressed as the sum of the uniaxial anisotropy and the cubic anisotropy, characterized by Kua and Kca anisotropy constants. By comparing the calculated magnetization with the experimental magnetization measurements at finite temperatures, the values of Kua and Kca can be determined. For nanocrystalline Ni it is found that with increasing temperature Kua decreases and Kca increases. At low temperatures Kua dominates the grain boundary anisotropy energy, whereas Kca is very small and it can be neglected. At room temperature Kua and Kca are of the same order with the corresponding ratio Kua /Kca ≈ 1.9 , both coefficients are much larger than the magnetocrystalline anisotropy constant.

  2. Electroacoustic characterization of conventional and electrosterically stabilized nanocrystalline celluloses.

    PubMed

    Safari, Salman; Sheikhi, Amir; van de Ven, Theo G M

    2014-10-15

    Nanoparticles are widely used as drug carriers, texturizing agents, fat replacers, and reinforcing inclusions. Because of a growing interest in non-renewable materials, much research has focused on nanocellulose derivatives, which are biodegradable, biocompatible, and easily synthesized. Among nanocellulose derivatives, nanocrystalline cellulose (NCC) has been known for half a century, but its utility is limited because its colloidal stability is challenged by added salt. On the other hand, electrosterically stabilized nanocrystalline cellulose (ENCC) has recently been observed to have superior colloidal stability. Here, we use electrokinetic-sonic-amplitude (ESA) and acoustic attenuation spectroscopy to assess NCC and ENCC ζ-potentials and sizes over wide ranges of pH and ionic strength. The results attest to a soft, porous layer of dicarboxylic cellulose (DCC) polymers that expands and collapses with ionic strength, electrosterically stabilizing ENCC dispersions at ionic strengths up to at least 200mmol L(-1).

  3. High Pressure X-Ray Diffraction Studies on Nanocrystalline Materials

    NASA Technical Reports Server (NTRS)

    Palosz, B.; Stelmakh, S.; Grzanka, E.; Gierlotka, S.; Pielaszek, R.; Bismayer, U.; Werner, S.; Palosz, W.

    2003-01-01

    Application of in situ high pressure powder diffraction technique for examination of specific structural properties of nanocrystals based on the experimental data of SiC nanocrystalline powders of 2 to 30 nrn diameter in diameter is presented. Limitations and capabilities of the experimental techniques themselves and methods of diffraction data elaboration applied to nanocrystals with very small dimensions (< 30 nm) are discussed. It is shown that due to the complex structure, constituting a two-phase, core/surface shell system, no unique lattice parameter value and, consequently, no unique compressibility coefficient can satisfactorily describe the behavior of nanocrystalline powders under pressure. We offer a tentative interpretation of the distribution of macro- and micro-strains in nanoparticles of different grain size.

  4. Grain growth and structural relaxation of nanocrystalline Bi₂Te₃

    SciTech Connect

    Humphry-Baker, Samuel A.; Schuh, Christopher A.

    2014-10-21

    Recovery and grain growth behavior is investigated systematically for the nanocrystalline thermoelectric compound bismuth telluride, synthesized by mechanical alloying. During annealing treatments at elevated temperatures, structural evolution is tracked using x-ray diffraction, electron microscopy and calorimetry. Below a homologous temperature of about 0.6T{sub m}, grain growth occurs slowly with an activation energy of 89 kJ/mol. However above this temperature grain growth becomes more rampant with an activation energy of 242 kJ/mol. The transition is attributed to a shift from a relaxation or recovery process that includes some reordering of the grain boundary structure, to a more conventional diffusionally-limited grain growth process. By extrapolating the measured grain growth and microstrain evolution kinetics, a thermal budget map is constructed, permitting recommendations for improving the thermoelectric properties of nanocrystalline materials processed via a powder route.

  5. Grain boundary and triple junction diffusion in nanocrystalline copper

    SciTech Connect

    Wegner, M. Leuthold, J.; Peterlechner, M.; Divinski, S. V.; Song, X.; Wilde, G.

    2014-09-07

    Grain boundary and triple junction diffusion in nanocrystalline Cu samples with grain sizes, 〈d〉, of ∼35 and ∼44 nm produced by spark plasma sintering were investigated by the radiotracer method using the {sup 63}Ni isotope. The measured diffusivities, D{sub eff}, are comparable with those determined previously for Ni grain boundary diffusion in well-annealed, high purity, coarse grained, polycrystalline copper, substantiating the absence of a grain size effect on the kinetic properties of grain boundaries in a nanocrystalline material at grain sizes d ≥ 35 nm. Simultaneously, the analysis predicts that if triple junction diffusion of Ni in Cu is enhanced with respect to the corresponding grain boundary diffusion rate, it is still less than 500⋅D{sub gb} within the temperature interval from 420 K to 470 K.

  6. Optical and electrical properties of nanocrystalline TiO2:Pd semiconducting oxides

    NASA Astrophysics Data System (ADS)

    Sieradzka, Karolina; Kaczmarek, Danuta; Domaradzki, Jarosław; Prociów, Eugeniusz; Mazur, Michał; Górnicka, Barbara

    2011-04-01

    Electrical and optical properties of TiO2:Pd thin films deposited from Ti-Pd mosaic targets sputtered in reactive oxygen plasma have been studied. The properties were investigated for thin films with the Pd amount of 5.5 at. %, 8.4 at. % and 23 at. %. Based on resistivity measurements a drop from 103 down to almost 10-3Ωcm has been recorded when the Pd amount was varied from 5.5 at. % to 23 at. %, respectively. Moreover, it was shown that doping with different amounts of Pd results in the possibility of obtaining both types of electrical conduction: n-type for the TiO2 with 5.5 at. % and 8.4 at. % of Pd and p-type for the TiO2 with 23 at. % of Pd thin films. From optical measurements it has been found that as the Pd amount was increased the transmission through the thin films was reduced and position of the fundamental absorption edge was shifted toward a longer wavelength range of up to 600 nm. The optical band gap was calculated for direct and indirect transitions from optical absorption spectra. Structural properties were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD patterns displayed occurrence of the crystalline, TiO2-rutile for lower Pd amounts (5.5 at. %, 8.4 at. %), while the TiO2:Pd (23 at. %) thin films displayed XRD-amorphous behaviour. Images obtained from AFM displayed dense, nanocrystalline structure with homogenous distribution of crystallites. Additionally performed secondary ion mass spectroscopy investigation confirmed homogenous distribution of Pd in the whole thickness of the prepared thin films.

  7. Ohmic contact properties of p-type surface conductive layer on H-terminated diamond films prepared by DC arc jet CVD

    NASA Astrophysics Data System (ADS)

    Liu, Jin-long; Li, Cheng-ming; Zhu, Rui-hua; Chen, Liang-xian; Wang, Jing-jing; Feng, Zhi-hong

    2013-08-01

    With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current (DC) arc jet chemical vapor deposition (CVD) are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 1011-1013 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method (TLM). Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10-5 Ω·cm2 as the temperature increases to 820°C. However, when the annealing temperature reaches 850°C, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550°C, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.

  8. Hydrogen program overview

    SciTech Connect

    Gronich, S.

    1997-12-31

    This paper consists of viewgraphs which summarize the following: Hydrogen program structure; Goals for hydrogen production research; Goals for hydrogen storage and utilization research; Technology validation; DOE technology validation activities supporting hydrogen pathways; Near-term opportunities for hydrogen; Market for hydrogen; and List of solicitation awards. It is concluded that a full transition toward a hydrogen economy can begin in the next decade.

  9. Magnons as a Bose-Einstein Condensate in Nanocrystalline Gadolinium

    SciTech Connect

    Kaul, S. N.; Mathew, S. P.

    2011-06-17

    The recent observation [S. P. Mathew et al., J. Phys. Conf. Ser. 200, 072047 (2010)] of the anomalous softening of spin-wave modes at low temperatures in nanocrystalline gadolinium is interpreted as a Bose-Einstein condensation (BEC) of magnons. A self-consistent calculation, based on the BEC picture, is shown to closely reproduce the observed temperature variations of magnetization and specific heat at constant magnetic fields.

  10. Nanocrystalline iron oxide aerogels as mesoporous magnetic architectures.

    PubMed

    Long, Jeffrey W; Logan, Michael S; Rhodes, Christopher P; Carpenter, Everett E; Stroud, Rhonda M; Rolison, Debra R

    2004-12-29

    We have developed crystalline nanoarchitectures of iron oxide that exhibit superparamagnetic behavior while still retaining the desirable bicontinuous pore-solid networks and monolithic nature of an aerogel. Iron oxide aerogels are initially produced in an X-ray-amorphous, high-surface-area form, by adapting recently established sol-gel methods using Fe(III) salts and epoxide-based proton scavengers. Controlled temperature/atmosphere treatments convert the as-prepared iron oxide aerogels into nanocrystalline forms with the inverse spinel structure. As a function of the bathing gas, treatment temperature, and treatment history, these nanocrystalline forms can be reversibly tuned to predominantly exhibit either Fe(3)O(4) (magnetite) or gamma-Fe(2)O(3) (maghemite) phases, as verified by electron microscopy, X-ray and electron diffraction, microprobe Raman spectroscopy, and magnetic analysis. Peak deconvolution of the Raman-active Fe-O bands yields valuable information on the local structure and vacancy content of the various aerogel forms, and facilitates the differentiation of Fe(3)O(4) and gamma-Fe(2)O(3) components, which are difficult to assign using only diffraction methods. These nanocrystalline, magnetic forms retain the inherent characteristics of aerogels, including high surface area (>140 m(2) g(-1)), through-connected porosity concentrated in the mesopore size range (2-50 nm), and nanoscale particle sizes (7-18 nm). On the basis of this synthetic and processing protocol, we produce multifunctional nanostructured materials with effective control of the pore-solid architecture, the nanocrystalline phase, and subsequent magnetic properties.

  11. Role of nanocrystalline cerium oxide coatings on austenitic stainless steels

    NASA Astrophysics Data System (ADS)

    Zhang, Haiying

    Protective nanocrystalline cerium oxide coating has been applied to ASTM grade 304L and 304 austenitic stainless steels to improve its oxidation resistance at elevated temperatures. Experimentally, the selected alloy was exposed to 800°C/1000°C under dry air conditions. Weight changes (DeltaW/A) were monitored as a function of time and the results were compared with uncoated alloys tested under similar conditions. It was found that the oxidation resistances of 304L and 304 stainless steels were significantly improved. A comparison of the oxidation rates indicated that the nanocrystalline cerium oxide coating reduced the rate of oxidation by more than two orders of magnitude. Nevertheless, a comprehensive understanding of the mechanisms responsible for the reduction in the oxidation rate is not clear. Consequently, this work is aimed at investigating the mechanisms involved during scale growth in the presence or absence of nanocrystalline coatings. For this purpose, density functional theory was carried out in order to predict oxygen and iron diffusion microscopic activation energies and reveal the intrinsic characteristics of nanocrystalline coatings. A numerical simulation of corrosion process has also been conducted to predict the corrosion rates of alloys with and without coatings. Hence, the results from simulations are compared with the experimental outcome, and possible explanations are given to account for the reduction in the exhibited oxidation rates. The simulation results will provide a highly valuable tool for the realization of functional nanostructures and architectures "by design", particularly in the development of novel coatings, and a new approach of life assessment.

  12. Nanocrystalline zinc oxide: Pyrolytic synthesis and spectroscopic characteristics

    SciTech Connect

    Demyanets, L. N. Li, L. E.; Lavrikov, A. S.; Nikitin, S. V.

    2010-01-15

    Nanocrystalline and microcrystalline ZnO powders are synthesized by the pyrolysis of organic zinc salts in the presence of a reducing catalyst represented by a porous cellulose carrier. The specimens obtained are characterized by X-ray powder diffraction, energy dispersive analysis, scanning electron microscopy, and pulse cathodoluminescence. Lasing characteristics of the specimens are studied. The synthesis conditions, under which specimens with the crystallite morphology optimal for a low-threshold lasing are obtained, are found.

  13. Nanocrystalline zinc oxide: Pyrolytic synthesis and spectroscopic characteristics

    NASA Astrophysics Data System (ADS)

    Demyanets, L. N.; Li, L. E.; Lavrikov, A. S.; Nikitin, S. V.

    2010-01-01

    Nanocrystalline and microcrystalline ZnO powders are synthesized by the pyrolysis of organic zinc salts in the presence of a reducing catalyst represented by a porous cellulose carrier. The specimens obtained are characterized by X-ray powder diffraction, energy dispersive analysis, scanning electron microscopy, and pulse cathodoluminescence. Lasing characteristics of the specimens are studied. The synthesis conditions, under which specimens with the crystallite morphology optimal for a low-threshold lasing are obtained, are found.

  14. Characterisation of amorphous and nanocrystalline molecular materials by total scattering

    SciTech Connect

    Billinge, Simon J.L.; Dykhne, Timur; Juhás, Pavol; Boin, Emil; Taylor, Ryan; Florence, Alastair J.; Shankland, Kenneth

    2010-09-17

    The use of high-energy X-ray total scattering coupled with pair distribution function analysis produces unique structural fingerprints from amorphous and nanostructured phases of the pharmaceuticals carbamazepine and indomethacin. The advantages of such facility-based experiments over laboratory-based ones are discussed and the technique is illustrated with the characterisation of a melt-quenched sample of carbamazepine as a nanocrystalline (4.5 nm domain diameter) version of form III.

  15. Structural Modification of Nanocrystalline Ceria by Ion Beams

    SciTech Connect

    Zhang, Yanwen; Edmondson, Philip D.; Varga, Tamas; Moll, Sandra J.; Namavar, Fereydoon; Lan, Chune; Weber, William J.

    2011-05-25

    Using energetic ions, we have demonstrated effective modification of grain size in nanocrystalline ceria in the critical region for controlling exceptional size-dependent electronicionic conductivity. The grain size increases and follows an exponential law as a function of ion fluence that increases with temperature, while the cubic phase is stable under the irradiation. The unique self-healing response of radiation damage at grain boundaries is utilized to control the grain size at the nanoscale.

  16. Tension/Compression Strength Asymmetry in a Simulated Nanocrystalline Metal

    DTIC Science & Technology

    2007-11-02

    PHYSICAL REVIEW B 69, 012101 ~2004!TensionÕcompression strength asymmetry in a simulated nanocrystalline metal A. C. Lund,1 T. G. Nieh,2 and C. A...nanoscale range plastic flow occurs by shear shuffling of atoms located at intercrystalline boundaries,4,6 ultimately leading to cooperative, large-scale...the fraction of intercrystal- line atoms becomes appreciable. Thus it is natural to con- sider the amorphous state as being the ultimate limit for

  17. Hydrogen gas purification apparatus

    SciTech Connect

    Yanagihara, N.; Gamo, T.; Iwaki, T.; Moriwaki, Y.

    1984-04-24

    A hydrogen gas purification apparatus which includes at least one set of two hydrogen purification containers coupled to each other for heat exchanging therebetween, each of the hydrogen purification containers containing a hydrogen absorbing alloy. The hydrogen gas purification apparatus is so arranged as to cause hydrogen gas to be selectively desorbed from and absorbed into the hydrogen absorbing alloy by the amount of heat produced when the hydrogen gas is selectively absorbed into and desorbed from the hydrogen absorbing alloy.

  18. Development of a hydrogen gas sensor using microfabrication technology

    NASA Technical Reports Server (NTRS)

    Liu, Chung-Chiun; Wu, Qinghai; Stuczynski, Matthew; Madzsar, George C.

    1992-01-01

    Microfabrication and micromachining technologies are used to produce a hydrogen gas sensor based on a palladium-silver film. The sensor uses a heater that is fabricated by diffusing p-type borones into the substrate, forming a resistance heater. A diode for temperature measurement is produced using p-type boron and n-type phosphor diffused into the substrate. A thickness of the palladium-silver film is approximately 300 arcsec. The hydrogen gas sensor employs the proven palladium-silver diode structure and is surrounded by a phosphor doped resistance heater which can be heated up to a temperature of 250 C. Experimental results show that the sensor is capable of operating over a wide range of hydrogen concentration levels between 0-95 percent without any hysteresis effects.

  19. Improve oxidation resistance at high temperature by nanocrystalline surface layer

    NASA Astrophysics Data System (ADS)

    Xia, Z. X.; Zhang, C.; Huang, X. F.; Liu, W. B.; Yang, Z. G.

    2015-08-01

    An interesting change of scale sequence occurred during oxidation of nanocrystalline surface layer by means of a surface mechanical attrition treatment. The three-layer oxide structure from the surface towards the matrix is Fe3O4, spinel FeCr2O4 and corundum (Fe,Cr)2O3, which is different from the typical two-layer scale consisted of an Fe3O4 outer layer and an FeCr2O4 inner layer in conventional P91 steel. The diffusivity of Cr, Fe and O is enhanced concurrently in the nanocrystalline surface layer, which causes the fast oxidation in the initial oxidation stage. The formation of (Fe,Cr)2O3 inner layer would inhabit fast diffusion of alloy elements in the nanocrystalline surface layer of P91 steel in the later oxidation stage, and it causes a decrease in the parabolic oxidation rate compared with conventional specimens. This study provides a novel approach to improve the oxidation resistance of heat resistant steel without changing its Cr content.

  20. Improve oxidation resistance at high temperature by nanocrystalline surface layer

    PubMed Central

    Xia, Z. X.; Zhang, C.; Huang, X. F.; Liu, W. B.; Yang, Z. G.

    2015-01-01

    An interesting change of scale sequence occurred during oxidation of nanocrystalline surface layer by means of a surface mechanical attrition treatment. The three-layer oxide structure from the surface towards the matrix is Fe3O4, spinel FeCr2O4 and corundum (Fe,Cr)2O3, which is different from the typical two-layer scale consisted of an Fe3O4 outer layer and an FeCr2O4 inner layer in conventional P91 steel. The diffusivity of Cr, Fe and O is enhanced concurrently in the nanocrystalline surface layer, which causes the fast oxidation in the initial oxidation stage. The formation of (Fe,Cr)2O3 inner layer would inhabit fast diffusion of alloy elements in the nanocrystalline surface layer of P91 steel in the later oxidation stage, and it causes a decrease in the parabolic oxidation rate compared with conventional specimens. This study provides a novel approach to improve the oxidation resistance of heat resistant steel without changing its Cr content. PMID:26269034