Heterojunction solar cell with passivated emitter surface

DOEpatents

Olson, J.M.; Kurtz, S.R.

1994-05-31

A high-efficiency heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer. 1 fig.

Effects of Various Passivation Layers on Electrical Properties of Multilayer MoS₂ Transistors.

PubMed

Ma, Jiyeon; Yoo, Geonwook

2018-09-01

So far many of research on transition metal dichalcogenides (TMDCs) are based on a bottomgate device structure due to difficulty with depositing a dielectric film on top of TMDs channel layer. In this work, we study different effects of various passivation layers on electrical properties of multilayer MoS2 transistors: spin-coated CYTOP, SU-8, and thermal evaporated MoOX. The SU-8 passivation layer alters device performance least significantly, and MoOX induces positive threshold voltage shift of ~8.0 V due to charge depletion at the interface, and the device with CYTOP layer exhibits decreased field-effect mobility by ~50% due to electric dipole field effect of C-F bonds in the end groups. Our results imply that electrical properties of the multilayer MoS2 transistors can be modulated using a passivation layer, and therefore a proper passivation layer should be considered for MoS2 device structures.

Back contact buffer layer for thin-film solar cells

DOEpatents

Compaan, Alvin D.; Plotnikov, Victor V.

2014-09-09

A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

A study of X100 pipeline steel passivation in mildly alkaline bicarbonate solutions using electrochemical impedance spectroscopy under potentiodynamic conditions and Mott-Schottky

NASA Astrophysics Data System (ADS)

Gadala, Ibrahim M.; Alfantazi, Akram

2015-12-01

The key steps involved in X100 pipeline steel passivation in bicarbonate-based simulated soil solutions from the pre-passive to transpassive potential regions have been analyzed here using a step-wise anodizing-electrochemical impedance spectroscopy (EIS) routine. Pre-passive steps involve parallel dissolution-adsorption in early stages followed by clear diffusion-adsorption control shortly before iron hydroxide formation. Aggressive NS4 chlorides/sulfate promote steel dissolution whilst inhibiting diffusion in pre-passive steps. Diffusive and adsorptive effects remain during iron hydroxide formation, but withdraw shortly thereafter during its removal and the development of the stable iron carbonate passive layer. Passive layer protectiveness is evaluated using EIS fitting, current density analysis, and correlations with semiconductive parameters, consistently revealing improved robustness in colder, bicarbonate-rich, chloride/sulfate-free conditions. Ferrous oxide formation at higher potentials results in markedly lower impedances with disordered behavior, and the involvement of the iron(III) valence state is observed in Mott-Schottky tests exclusively for 75 °C conditions.

Development of a Bio-inspired Microflap Array for Passive Control of Flow Separation

NASA Astrophysics Data System (ADS)

Devey, Sean; Morris, Jackson; Hubner, Paul; Lang, Amy

2017-11-01

The shortfin mako shark benefits from its flexible microscopic scales, or denticles; which can passively limit flow separation in water. These denticles can be passively actuated by incipient reversing flow in the lower 5% of the boundary layer, thereby impeding further flow reversal and promoting increased momentum exchange. In air, an array of flow actuated microflaps has the potential to provide similar benefits to man-made systems. Multiple iterations of microflap arrays have been developed and tested in the University of Alabama's Boundary Layer Tunnel. A variety of 3D-printed flaps derived from mako denticle geometries were arranged in rows with freedom to rotate, like mako denticles, to angles up to 50 degrees. Placing the microflap array in separated flow regions allowed for direct observation of the microflap response. Like mako denticles, microflaps with lengths of about 4 mm have been shown to actuate in response to reversing surface flows. This presentation will focus on the development and implementation of passive microflap arrays. This research was supported by Boeing, the US Army, and the National Science Foundation REU program.

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

NASA Astrophysics Data System (ADS)

Xin, Zheng; Ling, Zhi Peng; Nandakumar, Naomi; Kaur, Gurleen; Ke, Cangming; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf

2017-08-01

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density D it(E) and the total interface charge Q tot. Furthermore, the bonding configuration variation of the AlO x films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlO x tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlO x layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.

Enhanced Charge Collection with Passivation Layers in Perovskite Solar Cells.

PubMed

Lee, Yong Hui; Luo, Jingshan; Son, Min-Kyu; Gao, Peng; Cho, Kyung Taek; Seo, Jiyoun; Zakeeruddin, Shaik M; Grätzel, Michael; Nazeeruddin, Mohammad Khaja

2016-05-01

The Al2 O3 passivation layer is beneficial for mesoporous TiO2 -based perovskite solar cells when it is deposited selectively on the compact TiO2 surface. Such a passivation layer suppressing surface recombination can be formed by thermal decomposition of the perovskite layer during post-annealing. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication process for polymer PLC platforms with V-grooves for passive alignment

NASA Astrophysics Data System (ADS)

Park, Suntak; Lee, Jong-Moo; Ahn, Joon Tae; Baek, Yong-Soon

2005-12-01

A method for polymer planar lightwave circuit (PLC) devices fabricated on a substrate with V-grooves is developed for passive alignment of an optical fiber to a polymer waveguide. In order to minimize thickness nonuniformity of polymer layers caused by the V-grooves, dry film resist (DFR) is used. The V-grooves are covered with the DFR before the polymer layers are spin-coated on the substrate. The DFR prevents the polymer from being filled in the V-grooves as well as from being spin-coated nonuniformly on the substrate. This process provides a simple and cost-effective fabrication method of polymer PLCs or platforms for passive alignment.

Passivation layer breakdown during laser-fired contact formation for photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raghavan, A.; DebRoy, T.; Palmer, T. A.

2014-07-14

Low resistance laser-fired ohmic contacts (LFCs) can be formed on the backside of Si-based solar cells using microsecond pulses. However, the impact of these longer pulse durations on the dielectric passivation layer is not clear. Retention of the passivation layer during processing is critical to ensure low recombination rates of electron-hole pairs at the rear surface of the device. In this work, advanced characterization tools are used to demonstrate that although the SiO{sub 2} passivation layer melts directly below the laser, it is well preserved outside the immediate LFC region over a wide range of processing parameters. As a result,more » low recombination rates at the passivation layer/wafer interface can be expected despite higher energy densities associated with these pulse durations.« less

Highly air stable passivation of graphene based field effect devices.

PubMed

Sagade, Abhay A; Neumaier, Daniel; Schall, Daniel; Otto, Martin; Pesquera, Amaia; Centeno, Alba; Elorza, Amaia Zurutuza; Kurz, Heinrich

2015-02-28

The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.

The importance of structural softening for the evolution and architecture of passive margins

PubMed Central

Duretz, T.; Petri, B.; Mohn, G.; Schmalholz, S. M.; Schenker, F. L.; Müntener, O.

2016-01-01

Lithospheric extension can generate passive margins that bound oceans worldwide. Detailed geological and geophysical studies in present and fossil passive margins have highlighted the complexity of their architecture and their multi-stage deformation history. Previous modeling studies have shown the significant impact of coarse mechanical layering of the lithosphere (2 to 4 layer crust and mantle) on passive margin formation. We built upon these studies and design high-resolution (~100–300 m) thermo-mechanical numerical models that incorporate finer mechanical layering (kilometer scale) mimicking tectonically inherited heterogeneities. During lithospheric extension a variety of extensional structures arises naturally due to (1) structural softening caused by necking of mechanically strong layers and (2) the establishment of a network of weak layers across the deforming multi-layered lithosphere. We argue that structural softening in a multi-layered lithosphere is the main cause for the observed multi-stage evolution and architecture of magma-poor passive margins. PMID:27929057

Oceanographic applications of laser technology

NASA Technical Reports Server (NTRS)

Hoge, F. E.

1988-01-01

Oceanographic activities with the Airborne Oceanographic Lidar (AOL) for the past several years have primarily been focussed on using active (laser induced pigment fluorescence) and concurrent passive ocean color spectra to improve existing ocean color algorithms for estimating primary production in the world's oceans. The most significant results were the development of a technique for selecting optimal passive wavelengths for recovering phytoplankton photopigment concentration and the application of this technique, termed active-passive correlation spectroscopy (APCS), to various forms of passive ocean color algorithms. Included in this activity is use of airborne laser and passive ocean color for development of advanced satellite ocean color sensors. Promising on-wavelength subsurface scattering layer measurements were recently obtained. A partial summary of these results are shown.

Method to grow group III-nitrides on copper using passivation layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Qiming; Wang, George T; Figiel, Jeffrey T

Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thi, Trinh Cham, E-mail: s1240009@jaist.ac.jp; Koyama, Koichi; Ohdaira, Keisuke

We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN{sub x}) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH{sub 3} molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN{sub x}/P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN{sub x} passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRVmore » is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN{sub x} films. The outstanding results obtained imply that SiN{sub x}/P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.« less

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.

PubMed

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-10-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se 2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF 2 coated with a thin atomic layer deposited Al 2 O 3 layer, or direct current magnetron sputtering of Al 2 O 3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al 2 O 3 /CIGS rear interface. (MgF 2 /)Al 2 O 3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells.

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

PubMed Central

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-01-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. PMID:26300619

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

NASA Astrophysics Data System (ADS)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

Semiconductor/dielectric interface engineering and characterization

NASA Astrophysics Data System (ADS)

Lucero, Antonio T.

The focus of this dissertation is the application and characterization of several, novel interface passivation techniques for III-V semiconductors, and the development of an in-situ electrical characterization. Two different interface passivation techniques were evaluated. The first is interface nitridation using a nitrogen radical plasma source. The nitrogen radical plasma generator is a unique system which is capable of producing a large flux of N-radicals free of energetic ions. This was applied to Si and the surface was studied using x-ray photoelectron spectroscopy (XPS). Ultra-thin nitride layers could be formed from 200-400° C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using this passivation technique. Interface nitridation was able to reduce leakage current and improve the equivalent oxide thickness of the devices. The second passivation technique studied is the atomic layer deposition (ALD) diethylzinc (DEZ)/water treatment of sulfur treated InGaAs and GaSb. On InGaAs this passivation technique is able to chemically reduce higher oxidation states on the surface, and the process results in the deposition of a ZnS/ZnO interface passivation layer, as determined by XPS. Capacitance-voltage (C-V) measurements of MOSCAPs made on p-InGaAs reveal a large reduction in accumulation dispersion and a reduction in the density of interfacial traps. The same technique was applied to GaSb and the process was studied in an in-situ half-cycle XPS experiment. DEZ/H2O is able to remove all Sb-S from the surface, forming a stable ZnS passivation layer. This passivation layer is resistant to further reoxidation during dielectric deposition. The final part of this dissertation is the design and construction of an ultra-high vacuum cluster tool for in-situ electrical characterization. The system consists of three deposition chambers coupled to an electrical probe station. With this setup, devices can be processed and subsequently electrically characterized without exposing the sample to air. This is the first time that such a system has been reported. A special air-gap C-V probe will allow top gated measurements to be made, allowing semiconductor-dielectric interfaces to be studied during device processing.

Optimal design of damping layers in SMA/GFRP laminated hybrid composites

NASA Astrophysics Data System (ADS)

Haghdoust, P.; Cinquemani, S.; Lo Conte, A.; Lecis, N.

2017-10-01

This work describes the optimization of the shape profiles for shape memory alloys (SMA) sheets in hybrid layered composite structures, i.e. slender beams or thinner plates, designed for the passive attenuation of flexural vibrations. The paper starts with the description of the material and architecture of the investigated hybrid layered composite. An analytical method, for evaluating the energy dissipation inside a vibrating cantilever beam is developed. The analytical solution is then followed by a shape profile optimization of the inserts, using a genetic algorithm to minimize the SMA material layer usage, while maintaining target level of structural damping. Delamination problem at SMA/glass fiber reinforced polymer interface is discussed. At the end, the proposed methodology has been applied to study the hybridization of a wind turbine layered structure blade with SMA material, in order to increase its passive damping.

Solar cells and methods of fabrication thereof

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shumate, Seth Daniel; Hutchings, Douglas Arthur; Mohammed, Hafeezuddin

A passivation layer is deposited on a first portion of a region of the solar cell. A grid line is deposited on a second portion of the region. The passivation layer is annealed to drive chemical species from the passivation layer to deactivate an electrical activity of a dopant in the first portion of the region of the solar cell.

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

PubMed

Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

2016-12-01

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

Surface Passivation by Quantum Exclusion Using Multiple Layers

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor)

2013-01-01

A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes a plurality M of doped layers, where M is an integer greater than 1. The dopant sheet densities in the M doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. M-1 interleaved layers provided between the M doped layers are not deliberately doped (also referred to as "undoped layers"). Structures with M=2, M=3 and M=4 have been demonstrated and exhibit improved passivation.

Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

NASA Astrophysics Data System (ADS)

Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

2017-08-01

Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

Passivation Of High-Temperature Superconductors

NASA Technical Reports Server (NTRS)

Vasquez, Richard P.

1991-01-01

Surfaces of high-temperature superconductors passivated with native iodides, sulfides, or sulfates formed by chemical treatments after superconductors grown. Passivating compounds nearly insoluble in and unreactive with water and protect underlying superconductors from effects of moisture. Layers of cuprous iodide and of barium sulfate grown. Other candidate passivating surface films: iodides and sulfides of bismuth, strontium, and thallium. Other proposed techniques for formation of passivating layers include deposition and gas-phase reaction.

Dry etching, surface passivation and capping processes for antimonide based photodetectors

NASA Astrophysics Data System (ADS)

Dutta, Partha; Langer, Jeffery; Bhagwat, Vinay; Juneja, Jasbir

2005-05-01

III-V antimonide based devices suffer from leakage currents. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of antimonide based devices. The quest for a suitable surface passivation technology is still on. In this paper, we will present some of the promising recent developments in this area based on dry etching of GaSb based homojunction photodiodes structures followed by various passivation and capping schemes. We have developed a damage-free, universal dry etching recipe based on unique ratios of Cl2/BCl3/CH4/Ar/H2 in ECR plasma. This novel dry plasma process etches all III-V compounds at different rates with minimal damage to the side walls. In GaSb based photodiodes, an order of magnitude lower leakage current, improved ideality factor and higher responsivity has been demonstrated using this recipe compared to widely used Cl2/Ar and wet chemical etch recipes. The dynamic zero bias resistance-area product of the Cl2/BCl3/CH4/Ar/H2 etched diodes (830 Ω cm2) is higher than the Cl2/Ar (300 Ω cm2) and wet etched (330 Ω cm2) diodes. Ammonium sulfide has been known to passivate surfaces of III-V compounds. In GaSb photodiodes, the leakage current density reduces by a factor of 3 upon sulfur passivation using ammonium sulfide. However, device performance degrades over a period of time in the absence of any capping or protective layer. Silicon Nitride has been used as a cap layer by various researchers. We have found that by using silicon nitride caps, the devices exhibit higher leakage than unpassivated devices probably due to plasma damage during SiNx deposition. We have experimented with various polymers for capping material. It has been observed that ammonium sulfide passivation when combined with parylene capping layer (150 Å), devices retain their improved performance for over 4 months.

Fluorine incorporation in solution-processed poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Yoshida, Naofumi; Bermundo, Juan Paolo; Ishikawa, Yasuaki; Nonaka, Toshiaki; Taniguchi, Katsuto; Uraoka, Yukiharu

2018-03-01

We investigated a fluorine-containing polysiloxane (Poly-SX) passivation layer fabricated by solution process for amorphous InGaZnO (a-IGZO) thin-film transistors (TFT). This passivation layer greatly improved the stability of the a-IGZO device even after being subjected to positive bias stress (PBS) and negative bias stress (NBS). The mobility (µ) of TFTs passivated by fluorine-containing Poly-SX increased by 31%-56% (10.50-12.54 cm2 V-1 s-1) compared with TFTs passivated by non-fluorinated Poly-SX (8.04 cm2 V-1 s-1). Increasing the amount of fluorine additives led to a higher µ in passivated TFTs. Aside from enhancing the performance, these passivation layers could increase the reliability of a-IGZO TFTs under PBS and NBS with a minimal threshold voltage shift (ΔV th) of up to  +0.2 V and  -0.1 V, respectively. Additionally, all TFTs passivated by the fluorinated passivation materials did not exhibit a hump effect after NBS. We also showed that fluorinated photosensitive Poly-SX, which can be fabricated without any dry etching process, had an effective passivation property. In this report, we demonstrated the photolithography of Poly-SX, and electrical properties of Poly-SX passivated TFTs, and analyzed the state of the a-IGZO layer to show the large potential of Poly-SX as an effective solution-processed passivation material.

Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etching

NASA Astrophysics Data System (ADS)

Duluard, C. Y.; Ranson, P.; Pichon, L. E.; Pereira, J.; Oubensaid, E. H.; Lefaucheux, P.; Puech, M.; Dussart, R.

2011-06-01

Deep etching of silicon has been investigated in an inductively coupled plasma etch reactor using short SiCl4/O2 plasma steps to passivate the sidewalls of the etched structures. A study was first carried out to define the appropriate parameters to create, at a substrate temperature of -20 °C, a passivation layer by SiCl4/O2 plasma that resists lateral chemical etching in SF6 plasma. The most efficient passivation layer was obtained for a SiCl4/O2 gas flow ratio of 2:1, a pressure of 1 Pa and a source power of 1000 W. Ex situ analyses on a film deposited with these parameters show that it is very rich in oxygen. Silicon etching processes that alternate SF6 plasma etch steps with SiCl4/O2 plasma passivation steps were then developed. Preliminary tests in pulsed-mode conditions have enabled etch rates greater than 2 µm min-1 with selectivities higher than 220. These results show that it is possible to develop a silicon deep etching process at substrate temperatures around -20 °C that uses low SiCl4 and O2 gas flows instead of conventional fluorocarbon gases for sidewall protection.

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

PubMed

Xiao, Xiang; Zhang, Letao; Shao, Yang; Zhou, Xiaoliang; He, Hongyu; Zhang, Shengdong

2017-12-13

A room-temperature flexible amorphous indium-gallium-zinc oxide thin film transistor (a-IGZO TFT) technology is developed on plastic substrates, in which both the gate dielectric and passivation layers of the TFTs are formed by an anodic oxidation (anodization) technique. While the gate dielectric Al 2 O 3 is grown with a conventional anodization on an Al:Nd gate electrode, the channel passivation layer Al 2 O 3 is formed using a localized anodization technique. The anodized Al 2 O 3 passivation layer shows a superior passivation effect to that of PECVD SiO 2 . The room-temperature-processed flexible a-IGZO TFT exhibits a field-effect mobility of 7.5 cm 2 /V·s, a subthreshold swing of 0.44 V/dec, an on-off ratio of 3.1 × 10 8 , and an acceptable gate-bias stability with threshold voltage shifts of 2.65 and -1.09 V under positive gate-bias stress and negative gate-bias stress, respectively. Bending and fatigue tests confirm that the flexible a-IGZO TFT also has a good mechanical reliability, with electrical performances remaining consistent up to a strain of 0.76% as well as after 1200 cycles of fatigue testing.

Atomically thin transition metal layers: Atomic layer stabilization and metal-semiconductor transition

NASA Astrophysics Data System (ADS)

Hwang, Jeongwoon; Oh, Young Jun; Kim, Jiyoung; Sung, Myung Mo; Cho, Kyeongjae

2018-04-01

We have performed first-principle calculations to explore the possibility of synthesizing atomically thin transition metal (TM) layers. Buckled structures as well as planar structures of elemental 2D TM layers result in significantly higher formation energies compared with sp-bonded elemental 2D materials with similar structures, such as silicene and phosphorene. It is shown that the TM layers can be stabilized by surface passivation with HS, C6H5S2, or O, and O passivation is most effective. The surface oxygen passivation can improve stability leading to thermodynamically stable TM monolayers except Au, which is the most non-reactive metal element. Such stabilized TM monolayers also show an electronic structure transition from metallic state of free-standing TM layer to semiconducting O-passivated Mo and W monolayers with band gaps of 0.20-1.38 eV.

Teflon/SiO₂ Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process.

PubMed

Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Hung, Bohr-Ran

2015-04-13

This study proposes a two-photomask process for fabricating amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO₂ combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO₂ deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity.

Large-Eddy Simulation in Planetary Boundary-Layer Research

NASA Technical Reports Server (NTRS)

Wyngaard, J. C.

1985-01-01

The structure and dynamics of the convective boundary layer are discussed. The vertical transport of a conservative, passive scalar was simulated. Also studied were the statistics by top-down and bottom-up scalar fields. Substantial differences were found between them due, presumably, to the asymmetry in the convective boundary layer. A generalization of mixed-layer scaling was developed which allows one to include the effects of top-down diffusion.

Comparison and characterization of different tunnel layers, suitable for passivated contact formation

NASA Astrophysics Data System (ADS)

Ling, Zhi Peng; Xin, Zheng; Ke, Cangming; Jammaal Buatis, Kitz; Duttagupta, Shubham; Lee, Jae Sung; Lai, Archon; Hsu, Adam; Rostan, Johannes; Stangl, Rolf

2017-08-01

Passivated contacts for solar cells can be realized using a variety of differently formed ultra-thin tunnel oxide layers. Assessing their interface properties is important for optimization purposes. In this work, we demonstrate the ability to measure the interface defect density distribution D it(E) and the fixed interface charge density Q f for ultra-thin passivation layers operating within the tunnel regime (<2 nm). Various promising tunnel layer candidates [i.e., wet chemically formed SiO x , UV photo-oxidized SiO x , and atomic layer deposited (ALD) AlO x ] are investigated for their potential application forming electron or hole selective tunnel layer passivated contacts. In particular, ALD AlO x is identified as a promising tunnel layer candidate for hole-extracting passivated contact formation, stemming from its high (negative) fixed interface charge density in the order of -6 × 1012 cm-2. This is an order of magnitude higher compared to wet chemically or UV photo-oxidized formed silicon oxide tunnel layers, while keeping the density of interface defect states D it at a similar level (in the order of ˜2 × 1012 cm-2 eV-1). This leads to additional field effect passivation and therefore to significantly higher measured effective carrier lifetimes (˜2 orders of magnitude). A surface recombination velocity of ˜40 cm/s has been achieved for a 1.5 nm thin ALD AlO x tunnel layer prior to capping by an additional hole transport material, like p-doped poly-Si or PEDOT:PSS.

Method for producing highly reflective metal surfaces

DOEpatents

Arnold, Jones B.; Steger, Philip J.; Wright, Ralph R.

1983-01-01

The invention is a novel method for producing mirror surfaces which are extremely smooth and which have high optical reflectivity. The method includes electrolessly depositing an amorphous layer of nickel on an article and then diamond-machining the resulting nickel surface to increase its smoothness and reflectivity. The machined nickel surface then is passivated with respect to the formation of bonds with electrodeposited nickel. Nickel then is electrodeposited on the passivated surface to form a layer of electroplated nickel whose inside surface is a replica of the passivated surface. The electroplated nickel layer then is separated from the passivated surface. The mandrel then may be re-passivated and provided with a layer of electrodeposited nickel, which is then recovered from the mandrel providing a second replica. The mandrel can be so re-used to provide many such replicas. As compared with producing each mirror-finished article by plating and diamond-machining, the new method is faster and less expensive.

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

PubMed Central

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Abstract Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlOx), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers. PMID:28634499

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

PubMed

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

NASA Astrophysics Data System (ADS)

Descoeudres, A.; Barraud, L.; Bartlome, R.; Choong, G.; De Wolf, Stefaan; Zicarelli, F.; Ballif, C.

2010-11-01

In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells, yielding aperture efficiencies up to 20.3% on 4 cm2 cells.

Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component

NASA Technical Reports Server (NTRS)

Barron, Andrew R. (Inventor); Hepp, Aloysius F. (Inventor); Jenkins, Phillip P. (Inventor); MacInnes, Andrew N. (Inventor)

1999-01-01

A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Yamazaki, Haruka; Nonaka, Toshiaki; Fujii, Mami N.; Uraoka, Yukiharu

2015-07-01

We report the fabrication of a photosensitive hybrid passivation material on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) that greatly enhance its stability and improve its electrical characteristics. The hybrid passivation based on polysilsesquioxane is transparent and fabricated using a simple solution process. Because the passivation is photosensitive, dry etching was never performed during TFT fabrication. TFTs passivated with this material had a small threshold voltage shift of 0.5 V during positive bias stress, 0.5 V during negative bias stress, and -2.5 V during negative bias illumination stress. Furthermore, TFTs passivated by this layer were stable after being subjected to high relative humidity stress — confirming the superb barrier ability of the passivation. Analysis of secondary ion mass spectrometry showed that a large amount of hydrogen, carbon, and fluorine can be found in the channel region. We show that both hydrogen and fluorine reduced oxygen vacancies and that fluorine stabilized weak oxygen and hydroxide bonds. These results demonstrate the large potential of photosensitive hybrid passivation layers as effective passivation materials.

A complementary set of electrochemical and X-ray synchrotron techniques to determine the passivation mechanism of iron treated in a new corrosion inhibitor solution specifically developed for the preservation of metallic artefacts

NASA Astrophysics Data System (ADS)

Mirambet, F.; Reguer, S.; Rocca, E.; Hollner, S.; Testemale, D.

2010-05-01

Metallic artefacts of the cultural heritage are often stored in uncontrolled environmental conditions. They are very sensitive to atmospheric corrosion caused by a succession of wet and dry periods due to variations of relative humidity and temperature. To avoid the complete degradation of the metallic artefacts, new preventive strategies must be developed. In this context, we have studied new compounds based on sodium carboxylates solutions CH3(CH2) n-2COO-, Na+ hereafter called NaC n . They allow the formation of a passive layer at the metallic surface composed of a metal-carboxylate complex. To understand the action of those inhibitors in the passivation process of iron we have performed electrochemical measurements and surface characterisation. Moreover, to monitor in real time the growth of the coating, in situ X-ray absorption spectroscopy (XAS) experiments at iron K-edge were carried out in an electrochemical cell. These analyses have shown that in the case of NaC10 solution, the protection of iron surface is correlated to the precipitation of a well-organised layer of FeC10. These experiments confirmed that this compound is a fully oxidised trinuclear Fe(III) complex containing decanoate anions as ligands. Such information concerning the passive layer is a key factor to evaluate its stability and finally the long-term efficiency of the protection treatment.

Interface architecture between TiO2/perovskite, perovskite/hole transport layer, and perovskite grain boundary(Conference Presentation)

NASA Astrophysics Data System (ADS)

Hayase, Shuzi; Hirotani, Daisuke; Moriya, Masahiro; Ogomi, Yuhei; Shen, Qing; Yoshino, Kenji; Toyoda, Taro

2016-09-01

In order to examine the interface structure of TiO2/perovskite layer, quartz crystal microbalance sensor (QCM) was used. On the QCM sensor, TiO2 layer was fabricated and the PbI2 solution in Dimethylformamide (DMF) was passed on the QCM sensor to estimate the adsorption density of the PbI2 on the titania2. The amount of PbI2 adsorption on TiO2 surface increased as the adsorption time and leveled off at a certain time. PbI2 still remained even after the solvent only (DMF) was passed on the TiO2 layer on QCM (namely rinsing with DMF), suggesting that the PbI2 was tightly bonded on the TiO2 surface. The bonding structure was found to be Ti-O-Pb linkage by XPS analysis. We concluded that the Ti-OH on the surface of TiO2 reacts with I-Pb-I to form Ti-O-Pb-I and HI (Fig.1 B). The surface trap density was measured by thermally stimulated current (TSC) method. Before the PbI2 passivation, the trap density of TiO2 was 1019 cm3. The trap density decreased to 1016/cm3 after the PbI2 passivation, suggesting that the TiO2 surface trap was passivated with I-Pb-I. The passivation density was tuned by the concentration of PbI2 in DMF, by which TiO2 layer was passivated. Perovskite solar cells were fabricated on the passivated TiO2 layer with various PbI2 passivation densities by one step process (mixture of PbI2 + MAI in DMF). It was found that Jsc increased with an increase in the Ti-O-Pb density. We concluded that the interface between TiO2 and perovskite layer has passivation structure consisting of Ti-O-Pb-I which decreases the trap density of the interfaces and supresses charge recombination. The effect of Cl anion on high efficiency is still controversial when perovskite layer is prepared by one step method from the mixture of MAI and PbCl2. It was found that adsorption density of PbCl2 on TiO2 surface was much higher than that of PbI2 from the experiment using QCM sensor. After the surface was washed with DMF, Cl and Pb were detected. These results suggest that the TiO2 surface was much more passivated by PbCl2 than by PbI2. This may explain partially the high efficiency when the perovskite layer was fabricated by one step process consisting of MAI and PbCl2 solution. We also observed that the crystal size increased with an increase in the amount of Cl anion which of course one of the explanation of the high efficiency. The interface of hole transport layer/perovskite layer, and between perovskite layer /perovskite layer (grain boundary) was passivated with organic amines. The passivation was also effective for increasing Voc and Jsc. This was explained by the results of transient absorption spectroscopy that the charge recombination time between hole transport payer/perovskite layer increased from 0.3 μsec to 60 μsec.

Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

PubMed Central

Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Hung, Bohr-Ran

2015-01-01

This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity. PMID:28788026

Low temperature cured poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Yoshida, Naofumi; Bermundo, Juan Paolo; Ishikawa, Yasuaki; Nonaka, Toshiaki; Taniguchi, Katsuto; Uraoka, Yukiharu

2018-05-01

Low temperature processable passivation materials are necessary to fabricate highly reliable amorphous InGaZnO (a-IGZO) thin-film transistors (TFT) on organic substrates for flexible device applications. We investigated 3 types of poly-siloxane (Poly-SX) passivation layers fabricated by a solution process and cured at low temperatures (180 °C) for a-IGZO TFTs. This passivation layer greatly improves the stability of the a-IGZO device even after being subjected to positive (PBS) and negative bias stress (NBS). The field effect mobility (μ) of MePhQ504010 passivated on the TFT reached 8.34 cm2/Vs and had a small threshold voltage shift of 0.9 V after PBS, -0.8 V after NBS without the hump phenomenon. Furthermore, we analyzed the hydrogen and hydroxide states in the a-IGZO layer by secondary ion mass spectrometry and X-ray photoelectron spectroscopy to determine the cause of excellent electrical properties despite the curing performed at a low temperature. These results show the potential of the solution processed Poly-SX passivation layer for flexible devices.

Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

PubMed

Kim, Hoonbae; Lee, Jihye; Sohn, Sunyoung; Jung, Donggeun

2016-05-01

Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

Interfacial Passivation of the p-Doped Hole-Transporting Layer Using General Insulating Polymers for High-Performance Inverted Perovskite Solar Cells.

PubMed

Zhang, Fan; Song, Jun; Hu, Rui; Xiang, Yuren; He, Junjie; Hao, Yuying; Lian, Jiarong; Zhang, Bin; Zeng, Pengju; Qu, Junle

2018-05-01

Organic-inorganic lead halide perovskite solar cells (PVSCs), as a competing technology with traditional inorganic solar cells, have now realized a high power conversion efficiency (PCE) of 22.1%. In PVSCs, interfacial carrier recombination is one of the dominant energy-loss mechanisms, which also results in the simultaneous loss of potential efficiency. In this work, for planar inverted PVSCs, the carrier recombination is dominated by the dopant concentration in the p-doped hole transport layers (HTLs), since the F4-TCNQ dopant induces more charge traps and electronic transmission channels, thus leading to a decrease in open-circuit voltages (V OC ). This issue is efficiently overcome by inserting a thin insulating polymer layer (poly(methyl methacrylate) or polystyrene) as a passivation layer with an appropriate thickness, which allows for increases in the V OC without significantly sacrificing the fill factor. It is believed that the passivation layer attributes to the passivation of interfacial recombination and the suppression of current leakage at the perovskite/HTL interface. By manipulating this interfacial passivation technique, a high PCE of 20.3% is achieved without hysteresis. Consequently, this versatile interfacial passivation methodology is highly useful for further improving the performance of planar inverted PVSCs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers

NASA Astrophysics Data System (ADS)

Na, Dongsoo; Park, Kichul; Park, Ki-Hwan; Song, Yong-Won

2017-11-01

Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al2O3, considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al2O3-passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers.

PubMed

Na, Dongsoo; Park, Kichul; Park, Ki-Hwan; Song, Yong-Won

2017-11-24

Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al 2 O 3 , considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al 2 O 3 -passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

Cooperative suction by vertical capillary array pump for controlling flow profiles of microfluidic sensor chips.

PubMed

Horiuchi, Tsutomu; Hayashi, Katsuyoshi; Seyama, Michiko; Inoue, Suzuyo; Tamechika, Emi

2012-10-18

A passive pump consisting of integrated vertical capillaries has been developed for a microfluidic chip as an useful component with an excellent flow volume and flow rate. A fluidic chip built into a passive pump was used by connecting the bottoms of all the capillaries to a top surface consisting of a thin layer channel in the microfluidic chip where the thin layer channel depth was smaller than the capillary radius. As a result the vertical capillaries drew fluid cooperatively rather than independently, thus exerting the maximum suction efficiency at every instance. This meant that a flow rate was realized that exhibited little variation and without any external power or operation. A microfluidic chip built into this passive pump had the ability to achieve a quasi-steady rather than a rapidly decreasing flow rate, which is a universal flow characteristic in an ordinary capillary.

Evaluating the Radiation Damage to Quartz Rods in the ATLAS Zero Degree Calorimeter

NASA Astrophysics Data System (ADS)

Goodale, Kathryn

2017-09-01

At the Large Hadron Collider, the ATLAS experiment studies particle collisions to explore the fundamental particles of nature. A key instrumentation technology used by the ATLAS experiment are calorimeters for particle energy measurements. UIUC is developing a new Zero-Degree Calorimeter; a hadronic calorimeter located at zero-degrees from the collision axis. It consists of alternating layers of tungsten and oil; passive and active layers, respectively. The passive layers cause intense showers of secondary particles. These particles then produce Cherenkov radiation in the active layer. The oil in the active layer is replaced at a constant rate allowing for very high radiation doses in the detector without deteriorating the radiator material. The active layer includes wavelength shifters that absorb and re-emit isotropically the Cherenkov radiation. In this way, some of the photons arrive at two, hollow quartz rods which are filled by a second stage wavelength shifter. Here the light is absorbed and re-directed to a Silicon Photomultiplier for detection. In this paper, the impact of ionizing radiation on quartz rods will be discussed and the results from attenuation measurements will be presented.

Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Guangtao; Ingenito, Andrea; Hameren, Nienke van

2016-01-18

Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low-pressure chemical vapor deposition and subsequently annealed. The impact of doping profile on the passivation quality of the polySi doped contacts is studied for both polarities. It was found that an excellent surface passivation could be obtained by confining as much as possible the implanted-and-activated dopants within the polySi layers. The doping profile in the polySimore » was controlled by modifying the polySi thickness, the energy and dose of ion-implantation, and the temperature and time of annealing. An implied open-circuit voltage of 721 mV for n-type and 692 mV for p-type passivating contacts was achieved. Besides the high passivating quality, the developed passivating contacts exhibit reasonable high conductivity (R{sub sh n-type} = 95 Ω/□ and R{sub sh p-type} = 120 Ω/□). An efficiency of 19.2% (V{sub oc} = 673 mV, J{sub sc} = 38.0 mA/cm{sup 2}, FF = 75.2%, and pseudo-FF = 83.2%) was achieved on a front-textured IBC solar cell with polySi passivating contacts as both back surface field and emitter. By improving the front-side passivation, a V{sub OC} of 696 mV was also measured.« less

2D layered insulator hexagonal boron nitride enabled surface passivation in dye sensitized solar cells.

PubMed

Shanmugam, Mariyappan; Jacobs-Gedrim, Robin; Durcan, Chris; Yu, Bin

2013-11-21

A two-dimensional layered insulator, hexagonal boron nitride (h-BN), is demonstrated as a new class of surface passivation materials in dye-sensitized solar cells (DSSCs) to reduce interfacial carrier recombination. We observe ~57% enhancement in the photo-conversion efficiency of the DSSC utilizing h-BN coated semiconductor TiO2 as compared with the device without surface passivation. The h-BN coated TiO2 is characterized by Raman spectroscopy to confirm the presence of highly crystalline, mixed monolayer/few-layer h-BN nanoflakes on the surface of TiO2. The passivation helps to minimize electron-hole recombination at the TiO2/dye/electrolyte interfaces. The DSSC with h-BN passivation exhibits significantly lower dark saturation current in the low forward bias region and higher saturation in the high forward bias region, respectively, suggesting that the interface quality is largely improved without impeding carrier transport at the material interface. The experimental results reveal that the emerging 2D layered insulator could be used for effective surface passivation in solar cell applications attributed to desirable material features such as high crystallinity and self-terminated/dangling-bond-free atomic planes as compared with high-k thin-film dielectrics.

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

PubMed

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

2017-11-24

We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Fu, Chen; Lin, Zhaojun; Liu, Yan; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao

2017-11-01

A method to determine the strain distribution of the AlGaN barrier layer after the device fabrication and the passivation process has been presented. By fitting the calculated parasitic source access resistance with the measured ones for the AlGaN/AlN/GaN HFETs and using the polarization Coulomb field scattering theory, the strain variation of the AlGaN barrier layer after the passivation process has been quantitatively studied. The results show that the tensile strain in the access regions of the AlGaN barrier layer has been increased by 4.62% for the 250 nm-Si3N4 passivated device, and has been decreased by 2.0% for the 400 nm-Si3N4 passivated device, compared to that of before the passivation, respectively. For the gate region of the two devices, the tensile strain has been decreased by 60.77% and increased by 3.60% after the passivation of different thicknesses, oppositely.

Semiconductor laser having a non-absorbing passive region with beam guiding

NASA Technical Reports Server (NTRS)

Botez, Dan (Inventor)

1986-01-01

A laser comprises a semiconductor body having a pair of end faces and including an active region comprising adjacent active and guide layers which is spaced a distance from the end face and a passive region comprising adjacent non-absorbing guide and mode control layers which extends between the active region and the end face. The combination of the guide and mode control layers provides a weak positive index waveguide in the lateral direction thereby providing lateral mode control in the passive region between the active region and the end face.

Corrosion Characteristics of Ni-Based Hardfacing Alloy Deposited on Stainless Steel Substrate by Laser Cladding

NASA Astrophysics Data System (ADS)

Awasthi, Reena; Abraham, Geogy; Kumar, Santosh; Bhattacharyya, Kaustava; Keskar, Nachiket; Kushwaha, R. P.; Rao, Ramana; Tewari, R.; Srivastava, D.; Dey, G. K.

2017-06-01

In this study, corrosion characteristics of a nickel-based Ni-Mo-Cr-Si hardfacing alloy having 32Mo, 15Cr, and 3Si (wt pct) as alloying elements, deposited on stainless steel SS316L substrate by laser cladding, have been presented. Corrosion behavior of the laser clad layer was evaluated in reducing (0.1 M HCl) and oxidizing (0.5 M HNO3) environments, in comparison with the reference substrate SS316L, using electrochemical potentiodynamic technique at room temperature. The corrosion mechanisms have been evaluated on the basis of microstructural and microchemical analysis using scanning electron microscopy attached with energy-dispersive spectrometry. Passivity behavior of the laser clad layer was studied in 0.5 M H2SO4, using the potentiostatic technique and analyzing the passive layer by X-ray photoelectron spectroscopy. Laser clad layer of Ni-Mo-Cr-Si exhibited higher pitting corrosion resistance in chloride (reducing) environment, indicated by much higher breakdown potential ( 0.8 VSCE) and the absence of pitting as compared to substrate SS316L ( 0.3 VSCE). However, in oxidizing (0.5 M HNO3) environment, both the laser clad layer and substrate SS316L showed excellent and similar corrosion resistance exhibiting high breakdown potential ( 0.85 VSCE) and wide passivation range ( 0.8 VSCE) with low passive current density ( 4 to 7 × 10-6 A/cm2). The stable passive layer formed on laser clad layer of Ni-Mo-Cr-Si after exposure in 0.5 M H2SO4 solution at constant potential 0.6 VSCE (within the passive range), consisted oxides of Mo as Mo+4 (MoO2) and Mo+6 (MoO4)-2, Cr as Cr3+ (mixture of both Cr2O3 and Cr (OH)3), and Si as Si4+(SiO2), which have contributed to passivation and repassivation and therefore excellent corrosion behavior.

Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.

PubMed

Sun, Yiling; Gao, Pingqi; He, Jian; Zhou, Suqiong; Ying, Zhiqin; Yang, Xi; Xiang, Yong; Ye, Jichun

2016-12-01

Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (V oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PSS, rear-SiNx:H, front PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko

2016-01-15

Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All othermore » ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.« less

Passivation on High Q Acoustic Strain Sensor for Accelerometer.

DTIC Science & Technology

1984-11-01

selection of passivation layers. Preliminary results indicated that V203 , (yttrium oxide ) and AIN (aluminum nitride) were the best materials for...thickness selection of passivation layers. Preliminary results indicated that Y203 (yttrium oxide ) and AIN (aluminum nitride) were the best materials...crystal, in this case a parabolic temperature characteristic. Several circuits were designed using varactor diode phase shifting networks. FOjcTl Ta tor

A Comparison of Active and Passive Methods for Control of Hypersonic Boundary Layers on Airbreathing Configurations

NASA Technical Reports Server (NTRS)

Berry, Scott A.; Nowak, Robert J.

2003-01-01

Active and passive methods for control of hypersonic boundary layers have been experimentally examined in NASA Langley Research Center wind tunnels on a Hyper-X model. Several configurations for forcing transition using passive discrete roughness elements and active mass addition, or blowing, methods were compared in two hypersonic facilities, the 20-Inch Mach 6 Air and the 31-Inch Mach 10 Air tunnels. Heat transfer distributions, obtained via phosphor thermography, shock system details, and surface streamline patterns were measured on a 0.333-scale model of the Hyper-X forebody. The comparisons between the active and passive methods for boundary layer control were conducted at test conditions that nearly match the nominal Mach 7 flight trajectory of an angle-of-attack of 2-deg and length Reynolds number of 5.6 million. For the passive roughness examination, the primary parametric variation was a range of trip heights within the calculated boundary layer thickness for several trip concepts. The prior passive roughness study resulted in a swept ramp configuration being selected for the Mach 7 flight vehicle that was scaled to be roughly 0.6 of the calculated boundary layer thickness. For the active jet blowing study, the blowing manifold pressure was systematically varied for each configuration, while monitoring the mass flow, to determine the jet penetration height with schlieren and transition movement with the phosphor system for comparison to the passive results. All the blowing concepts tested were adequate for providing transition onset near the trip location with manifold stagnation pressures on the order of 40 times the model static pressure or higher.

Process and design considerations for high-efficiency solar cells

NASA Technical Reports Server (NTRS)

Rohati, A.; Rai-Choudhury, P.

1985-01-01

This paper shows that oxide surface passivation coupled with optimum multilayer anti-reflective coating can provide approx. 3% (absolute) improvement in solar cell efficiency. Use of single-layer AR coating, without passivation, gives cell efficiencies in the range of 15 to 15.5% on high-quality, 4 ohm-cm as well as 0.1 to 0.2 ohm-cm float-zone silicon. Oxide surface passivation alone raises the cell efficiency to or = 17%. An optimum double-layer AR coating on oxide-passivated cells provides an additional approx. 5 to 10% improvement over a single-layer AR-coated cell, resulting in cell efficiencies in excess of 18%. Experimentally observed improvements are supported by model calculations and an approach to or = 20% efficient cells is discussed.

ALD Al2O3 passivation of Lg = 100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates

NASA Astrophysics Data System (ADS)

Sun, Bing; Chang, Hudong; Wang, Shengkai; Niu, Jiebin; Liu, Honggang

2017-12-01

In0.52Al0.48As/In0.7Ga0.3As metamorphic high-electron-mobility transistors (mHEMTs) on GaAs substrates have been demonstrated. The devices feature an epitaxial structure with Si-doped InP/In0.52Al0.48As Schottky layers, together with an atomic layer deposition (ALD) Al2O3 passivation process. In comparison to the GaAs mHEMTs with plasma enhanced chemical vapor deposition (PECVD) SiN passivation, the devices with ALD Al2O3 passivation exhibit more than one order of magnitude lower gate leakage current (Jg) and much lower contact resistance (RC) and specific contact resistivity (ρC). 100-nm gate length (Lg) In0.52Al0.48As/In0.7Ga0.3As mHEMTs with Si-doped InP/In0.52Al0.48As Schottky layers and ALD Al2O3 passivation exhibit excellent DC and RF characteristics, such as a maximum oscillation frequency (fmax) of 388.2 GHz.

Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

NASA Astrophysics Data System (ADS)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

Influence of Passivation Layers for Metal Grating-Based Quantum Well Infrared Photodetectors

NASA Astrophysics Data System (ADS)

Liu, Dong; Fu, Yong-Qi; Yang, Le-Chen; Zhang, Bao-Shun; Li, Hai-Jun; Fu, Kai; Xiong, Min

2012-06-01

To improve absorption of quantum well infrared photodetectors (QWIPs), a coupling layer with metallic grating is designed and fabricated above the quantum well. The metal grating is composed of 100 nm Au film on top, and a 20-nm Ti thin layer between the Au film and the sapphire substrate is coated as an adhesion/buffer layer. To protect the photodetector from oxidation and to decrease leakage, a SiO2 film is deposited by means of plasma-enhanced chemical vapor deposition. A value of about 800 nm is an optimized thickness for the SiO2 applied in the metallic grating-based mid-infrared QWIP. In addition, a QWIP passivation layer is studied experimentally. The results demonstrate that the contribution from the layer is positive for metal grating coupling with the quantum well. The closer the permittivity of the two dielectric layers (SiO2 and the passivation layers), and the closer the two transmission peaks, the greater the QWIP enhancement will be.

Silver nanoparticles-incorporated Nb2O5 surface passivation layer for efficiency enhancement in dye-sensitized solar cells.

PubMed

Suresh, S; Unni, Gautam E; Satyanarayana, M; Sreekumaran Nair, A; Mahadevan Pillai, V P

2018-08-15

Guiding and capturing photons at the nanoscale by means of metal nanoparticles and interfacial engineering for preventing back-electron transfer are well documented techniques for performance enhancement in excitonic solar cells. Drifting from the conventional route, we propose a simple one-step process to integrate both metal nanoparticles and surface passivation layer in the porous photoanode matrix of a dye-sensitized solar cell. Silver nanoparticles and Nb 2 O 5 surface passivation layer are simultaneously deposited on the surface of a highly porous nanocrystalline TiO 2 photoanode, facilitating an absorption enhancement in the 465 nm and 570 nm wavelength region and a reduction in back-electron transfer in the fabricated dye-sensitized solar cells together. The TiO 2 photoanodes were prepared by spray pyrolysis deposition method from a colloidal solution of TiO 2 nanoparticles. An impressive 43% enhancement in device performance was accomplished in photoanodes having an Ag-incorporated Nb 2 O 5 passivation layer as against a cell without Ag nanoparticles. By introducing this idea, we were able to record two benefits - the metal nanoparticles function as the absorption enhancement agent, and the Nb 2 O 5 layer as surface passivation for TiO 2 nanoparticles and as an energy barrier layer for preventing back-electron transfer - in a single step. Copyright © 2018 Elsevier Inc. All rights reserved.

A concise way to estimate the average density of interface states in an ITO-SiOx/n-Si heterojunction solar cell

NASA Astrophysics Data System (ADS)

Li, Y.; Han, B. C.; Gao, M.; Wan, Y. Z.; Yang, J.; Du, H. W.; Ma, Z. Q.

2017-09-01

On the basis of a photon-assisted high frequency capacitance-voltage (C-V) method (1 MHz C-V), an effective approach is developed to evaluate the average interface state density (Dit) of an ITO-SiOx/n-Si heterojunction structure. Tin-doped indium oxide (ITO) films with different thicknesses were directly deposited on (100) n-type crystalline silicon by magnetron sputtering to fabricate semiconductor-insulator-semiconductor (SIS) hetero-interface regions where an ultra-thin SiOx passivation layer was naturally created. The morphology of the SiOx layer was confirmed by X-ray photoelectron spectroscopy depth profiling and transmission electron microscope analysis. The thinness of this SiOx layer was the main reason for the SIS interface state density being more difficult to detect than that of a typical metal-oxide-semiconductor structure. A light was used for photon injection while measuring the C-V of the device, thus enabling the photon-assisted C-V measurement of the Dit. By quantifying decreases of the light-induced-voltage as a variation of the capacitance caused by parasitic charge at interface states the passivation quality within the interface of ITO-SiOx/n-Si could be reasonably evaluated. The average interface state density of these SIS devices was measured as 1.2-1.7 × 1011 eV-1 cm-2 and declined as the passivation layer was made thicker. The lifetime of the minority carriers, dark leakage current, and the other photovoltaic parameters of the devices were also used to determine the passivation.

Modelling and Vibration Control of Beams with Partially Debonded Active Constrained Layer Damping Patch

NASA Astrophysics Data System (ADS)

SUN, D.; TONG, L.

2002-05-01

A detailed model for the beams with partially debonded active constraining damping (ACLD) treatment is presented. In this model, the transverse displacement of the constraining layer is considered to be non-identical to that of the host structure. In the perfect bonding region, the viscoelastic core is modelled to carry both peel and shear stresses, while in the debonding area, it is assumed that no peel and shear stresses be transferred between the host beam and the constraining layer. The adhesive layer between the piezoelectric sensor and the host beam is also considered in this model. In active control, the positive position feedback control is employed to control the first mode of the beam. Based on this model, the incompatibility of the transverse displacements of the active constraining layer and the host beam is investigated. The passive and active damping behaviors of the ACLD patch with different thicknesses, locations and lengths are examined. Moreover, the effects of debonding of the damping layer on both passive and active control are examined via a simulation example. The results show that the incompatibility of the transverse displacements is remarkable in the regions near the ends of the ACLD patch especially for the high order vibration modes. It is found that a thinner damping layer may lead to larger shear strain and consequently results in a larger passive and active damping. In addition to the thickness of the damping layer, its length and location are also key factors to the hybrid control. The numerical results unveil that edge debonding can lead to a reduction of both passive and active damping, and the hybrid damping may be more sensitive to the debonding of the damping layer than the passive damping.

Passivation effects on quantum dots prepared by successive ionic layer adsorption and reaction

NASA Astrophysics Data System (ADS)

Dai, Qilin; Maloney, Scott; Chen, Weimin; Poudyal, Uma; Wang, Wenyong

2016-06-01

ZnS is typically used to passivate semiconductor quantum dots (QDs) prepared by the successive ionic layer adsorption and reaction (SILAR) method for solar cell applications, while for colloidal QDs, organic ligands are usually used for this passivation purpose. In this study we utilized oleylamine and oleic acid ligands, besides ZnS, to passivate QDs prepared by the SILAR approach, and investigated their effects on the incident photon-to-current efficiency (IPCE) performance of the solar cells. It was observed that oleylamine passivation decreased device performance, while oleic acid passivation improved the IPCE of the cells. Redshift of the IPCE onset wavelength was also observed after oleic acid coating, which was attributed to the delocalization of excitons in the CdS QDs.

Acoustic explorations of the upper ocean boundary layer

NASA Astrophysics Data System (ADS)

Vagle, Svein

2005-04-01

The upper ocean boundary layer is an important but difficult to probe part of the ocean. A better understanding of small scale processes at the air-sea interface, including the vertical transfer of gases, heat, mass and momentum, are crucial to improving our understanding of the coupling between atmosphere and ocean. Also, this part of the ocean contains a significant part of the total biomass at all trophic levels and is therefore of great interest to researchers in a range of different fields. Innovative measurement plays a critical role in developing our understanding of the processes involved in the boundary layer, and the availability of low-cost, compact, digital signal processors and sonar technology in self-contained and cabled configurations has led to a number of exciting developments. This talk summarizes some recent explorations of this dynamic boundary layer using both active and passive acoustics. The resonant behavior of upper ocean bubbles combined with single and multi-frequency broad band active and passive devices are now giving us invaluable information on air-sea gas transfer, estimation of biological production, marine mammal behavior, wind speed and precipitation, surface and internal waves, turbulence, and acoustic communication in the surf zone.

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aoki, Takeshi, E-mail: aokit@sc.sumitomo-chem.co.jp; Fukuhara, Noboru; Osada, Takenori

2015-08-15

This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resultingmore » MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.« less

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE PAGES

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine; ...

2016-08-01

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

A simultaneous deep micromachining and surface passivation method suitable for silicon-based devices

NASA Astrophysics Data System (ADS)

Babaei, E.; Gharooni, M.; Mohajerzadeh, S.; Soleimani, E. A.

2018-07-01

Three novel methods for simultaneous micromachining and surface passivation of silicon are reported. A thin passivation layer is achieved using continuous and sequential plasma processes based on SF6, H2 and O2 gases. Reducing the recombination by surface passivation is crucial for the realization of high-performance nanosized optoelectronic devices. The passivation of the surface as an important step, is feasible by plasma processing based on hydrogen pulses in proper time-slots or using a mixture of H2 and O2, and SF6 gases. The passivation layer which is formed in situ during the micromachining process obviates a separate passivation step needed in conventional methods. By adjusting the plasma parameters such as power, duration, and flows of gases, the process can be controlled for the best results and acceptable under-etching at the same time. Moreover, the pseudo-oxide layer which is formed during the micromachining processes will also improve the electrical characteristics of the surface, which can be used as an add-on for micro and nanowire applications. To quantify the effect of surface passivation in our method, ellipsometry, lifetime measurements, x-ray photoelectron spectroscopy, current–voltage and capacitance–voltage measurements and solar cell testing have been employed.

Parylene-C passivation and effects on rectennas' wireless power transfer performance

NASA Astrophysics Data System (ADS)

Cooper, Camille; Eldridge, Keisharra; Kim, Min H.; Yoon, Hargsoon; Choi, Sang H.; Song, Kyo D.

2014-04-01

In this study, the effect of Parylene-C coated as a passivation layer on various rectennas is investigated in terms of their wireless power transfer performance. A passivation has been used for protection of rectenna circuits and their packaging in order for protection of the circuit elements and electrical insulation. Especially, wireless power receiving rectennas attached on sensors or on moving vehicles such as airship needs proper protection while they are exposed to harsh environment. In this research, a layer of Parylene-C thin film is used for passivation on rectennas and electromagnetic coupling by the coating is assessed by the measurement of receiving power levels. In this research, an electrochemical analysis method will also be introduced to measure the degree of water protection by a Parylene-C layer.

Multiple-layered effective medium approximation approach to modeling environmental effects on alumina passivated highly porous silicon nanostructured thin films measured by in-situ Mueller matrix ellipsometry

NASA Astrophysics Data System (ADS)

Mock, Alyssa; Carlson, Timothy; VanDerslice, Jeremy; Mohrmann, Joel; Woollam, John A.; Schubert, Eva; Schubert, Mathias

2017-11-01

Optical changes in alumina passivated highly porous silicon slanted columnar thin films during controlled exposure to toluene vapor are reported. Electron-beam evaporation glancing angle deposition and subsequent atomic layer deposition are utilized to deposit alumina passivated nanostructured porous silicon thin films. In-situ Mueller matrix generalized spectroscopic ellipsometry in an environmental cell is then used to determine changes in optical properties of the nanostructured thin films by inspection of individual Mueller matrix elements, each of which exhibit sensitivity to adsorption. The use of a multiple-layered effective medium approximation model allows for accurate description of the inhomogeneous nature of toluene adsorption onto alumina passivated highly porous silicon slanted columnar thin films.

Boundary Layer Control for Hypersonic Airbreathing Vehicles

NASA Technical Reports Server (NTRS)

Berry, Scott A.; Nowak, Robert J.; Horvath, Thomas J.

2004-01-01

Active and passive methods for tripping hypersonic boundary layers have been examined in NASA Langley Research Center wind tunnels using a Hyper-X model. This investigation assessed several concepts for forcing transition, including passive discrete roughness elements and active mass addition (or blowing), in the 20-Inch Mach 6 Air and the 31-Inch Mach 10 Air Tunnels. Heat transfer distributions obtained via phosphor thermography, shock system details, and surface streamline patterns were measured on a 0.333-scale model of the Hyper-X forebody. The comparisons between the active and passive methods for boundary layer control were conducted at test conditions that nearly match the Hyper-X nominal Mach 7 flight test-point of an angle-of-attack of 2-deg and length Reynolds number of 5.6 million. For passive roughness, the primary parametric variation was a range of trip heights within the calculated boundary layer thickness for several trip concepts. The passive roughness study resulted in a swept ramp configuration, scaled to be roughly 0.6 of the calculated boundary layer thickness, being selected for the Mach 7 flight vehicle. For the active blowing study, the manifold pressure was systematically varied (while monitoring the mass flow) for each configuration to determine the jet penetration height, with schlieren, and transition movement, with the phosphor system, for comparison to the passive results. All the blowing concepts tested, which included various rows of sonic orifices (holes), two- and three-dimensional slots, and random porosity, provided transition onset near the trip location with manifold stagnation pressures on the order of 40 times the model surface static pressure, which is adequate to ensure sonic jets. The present results indicate that the jet penetration height for blowing was roughly half the height required with passive roughness elements for an equivalent amount of transition movement.

On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes.

PubMed

Simon, Daniel K; Jordan, Paul M; Mikolajick, Thomas; Dirnstorfer, Ingo

2015-12-30

A controlled field-effect passivation by a well-defined density of fixed charges is crucial for modern solar cell surface passivation schemes. Al2O3 nanolayers grown by atomic layer deposition contain negative fixed charges. Electrical measurements on slant-etched layers reveal that these charges are located within a 1 nm distance to the interface with the Si substrate. When inserting additional interface layers, the fixed charge density can be continuously adjusted from 3.5 × 10(12) cm(-2) (negative polarity) to 0.0 and up to 4.0 × 10(12) cm(-2) (positive polarity). A HfO2 interface layer of one or more monolayers reduces the negative fixed charges in Al2O3 to zero. The role of HfO2 is described as an inert spacer controlling the distance between Al2O3 and the Si substrate. It is suggested that this spacer alters the nonstoichiometric initial Al2O3 growth regime, which is responsible for the charge formation. On the basis of this charge-free HfO2/Al2O3 stack, negative or positive fixed charges can be formed by introducing additional thin Al2O3 or SiO2 layers between the Si substrate and this HfO2/Al2O3 capping layer. All stacks provide very good passivation of the silicon surface. The measured effective carrier lifetimes are between 1 and 30 ms. This charge control in Al2O3 nanolayers allows the construction of zero-fixed-charge passivation layers as well as layers with tailored fixed charge densities for future solar cell concepts and other field-effect based devices.

Enhanced photovoltaic performance of inverted pyramid-based nanostructured black-silicon solar cells passivated by an atomic-layer-deposited Al2O3 layer.

PubMed

Chen, Hong-Yan; Lu, Hong-Liang; Ren, Qing-Hua; Zhang, Yuan; Yang, Xiao-Feng; Ding, Shi-Jin; Zhang, David Wei

2015-10-07

Inverted pyramid-based nanostructured black-silicon (BS) solar cells with an Al2O3 passivation layer grown by atomic layer deposition (ALD) have been demonstrated. A multi-scale textured BS surface combining silicon nanowires (SiNWs) and inverted pyramids was obtained for the first time by lithography and metal catalyzed wet etching. The reflectance of the as-prepared BS surface was about 2% lower than that of the more commonly reported upright pyramid-based SiNW BS surface over the whole of the visible light spectrum, which led to a 1.7 mA cm(-2) increase in short circuit current density. Moreover, the as-prepared solar cells were further passivated by an ALD-Al2O3 layer. The effect of annealing temperature on the photovoltaic performance of the solar cells was investigated. It was found that the values of all solar cell parameters including short circuit current, open circuit voltage, and fill factor exhibit a further increase under an optimized annealing temperature. Minority carrier lifetime measurements indicate that the enhanced cell performance is due to the improved passivation quality of the Al2O3 layer after thermal annealing treatments. By combining these two refinements, the optimized SiNW BS solar cells achieved a maximum conversion efficiency enhancement of 7.6% compared to the cells with an upright pyramid-based SiNWs surface and conventional SiNx passivation.

In situ-synthesized cadmium sulfide nanowire photosensor with a parylene passivation layer for chemiluminescent immunoassays.

PubMed

Im, Ju-Hee; Kim, Hong-Rae; An, Byoung-Gi; Chang, Young Wook; Kang, Min-Jung; Lee, Tae-Geol; Son, Jin Gyeng; Park, Jae-Gwan; Pyun, Jae-Chul

2017-06-15

The direct in situ synthesis of cadmium sulfide (CdS) nanowires (NWs) was presented by direct synthesis of CdS NWs on the gold surface of an interdigitated electrode (IDE). In this work, we investigated the effect of a strong oxidant on the surfaces of the CdS NWs using X-ray photoelectron spectroscopy, transmission electron microscopy, and time-of-flight secondary ion mass spectrometry. We also fabricated a parylene-C film as a surface passivation layer for in situ-synthesized CdS NW photosensors and investigated the influence of the parylene-C passivation layer on the photoresponse during the coating of parylene-C under vacuum using a quartz crystal microbalance and a photoanalyzer. Finally, we used the in situ-synthesized CdS NW photosensor with the parylene-C passivation layer to detect the chemiluminescence of horseradish peroxidase and luminol and applied it to medical detection of carcinoembryonic antigen. Copyright © 2017 Elsevier B.V. All rights reserved.

Melting Frozen Droplets Using Photo-Thermal Traps

NASA Astrophysics Data System (ADS)

Dash, Susmita; de Ruiter, Jolet; Varanasi, Kripa

2017-11-01

Ice buildup is an operational and safety hazard in wind turbines, power lines, and airplanes. While traditional de-icing methods are energy-intensive or environmentally unfriendly, passive anti-icing approach using superhydrophobic surfaces fails under humid conditions, which necessitates development of passive deicing methods. Here, we investigate a passive technique for deicing using a multi-layer surface design that can efficiently absorb and convert the incident solar radiation to heat. The corresponding increase in substrate temperature allows for easy removal of frozen droplets from the surface. We demonstrate the deicing performance of the designed surface both at very low temperatures, and under frost and snow coverage.

Si{sub 3}N{sub 4} layers for the in-situ passivation of GaN-based HEMT structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yunin, P. A., E-mail: yunin@ipmras.ru; Drozdov, Yu. N.; Drozdov, M. N.

2015-11-15

A method for the in situ passivation of GaN-based structures with silicon nitride in the growth chamber of a metal organic vapor phase epitaxy (MOVPE) reactor is described. The structural and electrical properties of the obtained layers are investigated. The in situ and ex situ passivation of transistor structures with silicon nitride in an electron-beam-evaporation device are compared. It is shown that ex situ passivation changes neither the initial carrier concentration nor the mobility. In situ passivation makes it possible to protect the structure surface against uncontrollable degradation upon the finishing of growth and extraction to atmosphere. In the inmore » situ passivated structure, the carrier concentration increases and the mobility decreases. This effect should be taken into account when manufacturing passivated GaN-based transistor structures.« less

Sputter-Deposited Oxides for Interface Passivation of CdTe Photovoltaics

DOE PAGES

Kephart, Jason M.; Kindvall, Anna; Williams, Desiree; ...

2018-01-18

Commercial CdTe PV modules have polycrystalline thin films deposited on glass, and devices made in this format have exceeded 22% efficiency. Devices made by the authors with a magnesium zinc oxide window layer and tellurium back contact have achieved efficiency over 18%, but these cells still suffer from an open-circuit voltage far below ideal values. Oxide passivation layers made by sputter deposition have the potential to increase voltage by reducing interface recombination. CdTe devices with these passivation layers were studied with photoluminescence (PL) emission spectroscopy and time-resolved photoluminescence (TRPL) to detect an increase in minority carrier lifetime. Because these oxidemore » materials exhibit barriers to carrier collection, micropatterning was used to expose small point contacts while still allowing interface passivation. TRPL decay lifetimes have been greatly enhanced for thin polycrystalline absorber films with interface passivation. Device performance was measured and current collection was mapped spatially by light-beam-induced current.« less

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

PubMed Central

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-01-01

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I–V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later. PMID:28252106

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

NASA Astrophysics Data System (ADS)

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-01

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later.

The role of cleaning conditions and epitaxial layer structure on reliability of Sc 2O 3 and MgO passivation on AlGaN/GaN HEMTS

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R. M.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Fitch, R. C.; Gillespie, J.; Dellmer, R.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.

2002-12-01

The effect of layer structure (GaN versus AlGaN cap) and cleaning procedure prior to Sc 2O 3 or MgO deposition at 100 °C were examined for their effects on the long-term bias-stress stability of AlGaN/GaN high electron mobility transistors (HEMTs). Surface cleaning by itself was not sufficient to prevent current collapse in the devices. The forward and reverse gate leakage currents were decreased under most conditions upon deposition of the oxide passivation layers. After ≈13 h of bias-stressing, the MgO-passivated HEMTs retain ⩾90% their initial drain-source current. The Sc 2O 3-passivated devices retained ˜80% recovery of the current under the same conditions.

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers.

PubMed

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-02

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO 2 /nanoporous-Si and the TiO 2 /nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO 2 /nanoporous Si are lower than that of the HfO 2 /nanoporous Si, the former is more stable than the later.

Comparative study on the passivation layers of copper sulphide minerals during bioleaching

NASA Astrophysics Data System (ADS)

Fu, Kai-bin; Lin, Hai; Mo, Xiao-lan; Wang, Han; Wen, Hong-wei; Wen, Zi-long

2012-10-01

The bioleaching of copper sulphide minerals was investigated by using A. ferrooxidans ATF6. The result shows the preferential order of the minerals bioleaching as djurleite>bornite>pyritic chalcopyrite>covellite>porphyry chalcopyrite. The residues were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is indicated that jarosite may not be responsible for hindered dissolution. The elemental sulfur layer on the surface of pyritic chalcopyrite residues is cracked. The compact surface layer of porphyry chalcopyrite may strongly hinder copper extraction. X-ray photoelectron spectroscopy (XPS) further confirms that the passivation layers of covellite, pyritic chalcopyrite, and porphyry chalcopyrite are copper-depleted sulphide Cu4S11, S8, and copper-rich iron-deficient polysulphide Cu4Fe2S9, respectively. The ability of these passivation layers was found as Cu4Fe2S9>Cu4S11>S8>jarosite.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Hydrogenation of passivated contacts

DOEpatents

Nemeth, William; Yuan, Hao-Chih; LaSalvia, Vincenzo; Stradins, Pauls; Page, Matthew R.

2018-03-06

Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

PubMed

Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

2017-10-11

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al 2 O 3 capping layer to form a PO x /Al 2 O 3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm -2 ), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as nanolasers and solar cells.

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer

PubMed Central

2017-01-01

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a POx layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since POx is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al2O3 capping layer to form a POx/Al2O3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm–2), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as nanolasers and solar cells. PMID:28885032

Unintentional consequences of dual mode plasma reactors: Implications for upscaling lab-record silicon surface passivation by silicon nitride

NASA Astrophysics Data System (ADS)

Tong, Jingnan; To, Alexander; Lennon, Alison; Hoex, Bram

2017-08-01

Silicon nitride (SiN x ) synthesised by low-temperature plasma enhanced chemical vapour deposition (PECVD) is the most extensively used antireflection coating for crystalline silicon solar cells because of its tunable refractive index in combination with excellent levels of surface and bulk passivation. This has attracted a significant amount of research on developing SiN x films towards an optimal electrical and optical performance. Typically, recipes are first optimised in lab-scale reactors and subsequently, the best settings are transferred to high-throughput reactors. In this paper, we show that for one particular, but widely used, PECVD reactor configuration this upscaling is severely hampered by an important experimental artefact. Specifically, we report on the unintentional deposition of a dual layer structure in a dual mode AK 400 plasma reactor from Roth & Rau which has a significant impact on its surface passivation performance. It is found that the radio frequency (RF) substrate bias ignites an unintentional depositing plasma before the ignition of the main microwave (MW) plasma. This RF plasma deposits a Si-rich intervening SiN x layer (refractive index = 2.4) while using a recipe for stoichiometric SiN x . This layer was found to be 18 nm thick in our case and had an extraordinary impact on the Si surface passivation, witnessed by a reduction in effective surface recombination velocity from 22.5 to 6.2 cm/s. This experimental result may explain some “out of the ordinary” excellent surface passivation results reported recently for nearly stoichiometric SiN x films and has significant consequences when transferring these results to high-throughput deposition systems.

Bidentate Ligand-Passivated CsPbI3 Perovskite Nanocrystals for Stable Near-Unity Photoluminescence Quantum Yield and Efficient Red Light-Emitting Diodes.

PubMed

Pan, Jun; Shang, Yuequn; Yin, Jun; De Bastiani, Michele; Peng, Wei; Dursun, Ibrahim; Sinatra, Lutfan; El-Zohry, Ahmed M; Hedhili, Mohamed N; Emwas, Abdul-Hamid; Mohammed, Omar F; Ning, Zhijun; Bakr, Osman M

2018-01-17

Although halide perovskite nanocrystals (NCs) are promising materials for optoelectronic devices, they suffer severely from chemical and phase instabilities. Moreover, the common capping ligands like oleic acid and oleylamine that encapsulate the NCs will form an insulating layer, precluding their utility in optoelectronic devices. To overcome these limitations, we develop a postsynthesis passivation process for CsPbI 3 NCs by using a bidentate ligand, namely 2,2'-iminodibenzoic acid. Our passivated NCs exhibit narrow red photoluminescence with exceptional quantum yield (close to unity) and substantially improved stability. The passivated NCs enabled us to realize red light-emitting diodes (LEDs) with 5.02% external quantum efficiency and 748 cd/m 2 luminance, surpassing by far LEDs made from the nonpassivated NCs.

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.

PubMed

Sharma, Deepak; Amani, Matin; Motayed, Abhishek; Shah, Pankaj B; Birdwell, A Glen; Najmaei, Sina; Ajayan, Pulickel M; Lou, Jun; Dubey, Madan; Li, Qiliang; Davydov, Albert V

2014-04-18

We have studied temperature-dependent (77-300 K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single-layer molybdenum disulfide (MoS2) based back-gated field-effect transistors (FETs). Electrical characterization and LFN measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the electrical characteristics of the device. Significant decrease in channel current and transconductance was observed in these devices after the Al2O3 passivation etching. For passivated devices, the two-terminal resistance variation with temperature showed a good fit to the activation energy model, whereas for the etched devices the trend indicated a hopping transport mechanism. A significant increase in the normalized drain current noise power spectral density (PSD) was observed after the etching of the top passivation layer. The observed channel current noise was explained using a standard unified model incorporating carrier number fluctuation and correlated surface mobility fluctuation mechanisms. Detailed analysis of the gate-referred noise voltage PSD indicated the presence of different trapping states in passivated devices when compared to the etched devices. Etched devices showed weak temperature dependence of the channel current noise, whereas passivated devices exhibited near-linear temperature dependence.

Ductile extension of syn-magmatic lower crusts, with application to volcanic passive margins: the Ivrea Zone (Southern Alps, Italy)

NASA Astrophysics Data System (ADS)

Bidault, Marie; Geoffroy, Laurent; Arbaret, Laurent; Aubourg, Charles

2017-04-01

Deep seismic reflection profiles of present-day volcanic passive margins often show a 2-layered lower crust, from top to bottom: an apparently ductile 12 km-thick middle-lower layer (LC1) of strong folded reflectors and a 4 km-thick supra-Moho layer (LC2) of horizontal and parallel reflectors. Those layers appear to be structurally disconnected and to develop at the early stages of margins evolution. A magmatic origin has been suggested by several studies to explain those strong reflectors, favoring mafic sills intrusion hypothesis. Overlying mafic and acidic extrusives (Seaward Dipping Reflectors sequences) are bounded by continentward-dipping detachment faults rooting in, and co-structurated with, the ductile part of the lower crust (LC1). Consequently the syn-rift to post-rift evolution of volcanic passive margins (and passive margins in general) largely depends on the nature and the properties of the lower crust, yet poorly understood. We propose to investigate the properties and rheology of a magma-injected extensional lower crust with a field analogue, the Ivrea Zone (Southern Alps, Italy). The Ivrea Zone displays a complete back-thrusted section of a Variscan continental lower crust that first underwent gravitational collapse, and then lithospheric extension. This Late Paleozoic extension was apparently associated with the continuous intrusion of a large volume of mafic to acid magma. Both the magma timing and volume, and the structure of the Ivrea lower crust suggest that this section represents an adequate analogue of a syn-magmatic in-extension mafic rift zone which aborted at the end of the Permian. Notably, we may recognize the 2 layers LC1 and LC2. From a number of tectonic observations, we reconstitute the whole tectonic history of the area, focusing on the strain field evolution with time, in connection with mafic magma injection. We compare those results with available data from extensional mafic lower crusts at rifts and margins.

Effective passivation of silicon surfaces by ultrathin atomic-layer deposited niobium oxide

NASA Astrophysics Data System (ADS)

Macco, B.; Bivour, M.; Deijkers, J. H.; Basuvalingam, S. B.; Black, L. E.; Melskens, J.; van de Loo, B. W. H.; Berghuis, W. J. H.; Hermle, M.; Kessels, W. M. M. Erwin

2018-06-01

This letter reports on effective surface passivation of n-type crystalline silicon by ultrathin niobium oxide (Nb2O5) films prepared by atomic layer deposition (ALD) and subjected to a forming gas anneal at 300 °C. A champion recombination parameter J0 of 20 fA/cm2 and a surface recombination velocity Seff of 4.8 cm/s have been achieved for ultrathin films of 1 nm. The surface pretreatment was found to have a strong impact on the passivation. Good passivation can be achieved on both HF-treated c-Si surfaces and c-Si surfaces with a wet-chemically grown interfacial silicon oxide layer. On HF-treated surfaces, a minimum film thickness of 3 nm is required to achieve a high level of surface passivation, whereas the use of a wet chemically-grown interfacial oxide enables excellent passivation even for Nb2O5 films of only 1 nm. This discrepancy in passivation between both surface types is attributed to differences in the formation and stoichiometry of interfacial silicon oxide, resulting in different levels of chemical passivation. On both surface types, the high level of passivation of ALD Nb2O5 is aided by field-effect passivation originating from a high fixed negative charge density of 1-2 × 1012 cm-3. Furthermore, it is demonstrated that the passivation level provided by 1 nm of Nb2O5 can be further enhanced through light-soaking. Finally, initial explorations show that a low contact resistivity can be obtained using Nb2O5-based contacts. Together, these properties make ALD Nb2O5 a highly interesting building block for high-efficiency c-Si solar cells.

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

PubMed

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Novel A Posteriori Investigation of Scalar Flux Models for Passive Scalar Dispersion in Compressible Boundary Layer Flows

NASA Astrophysics Data System (ADS)

Braman, Kalen; Raman, Venkat

2011-11-01

A novel direct numerical simulation (DNS) based a posteriori technique has been developed to investigate scalar transport modeling error. The methodology is used to test Reynolds-averaged Navier-Stokes turbulent scalar flux models for compressible boundary layer flows. Time-averaged DNS velocity and turbulence fields provide the information necessary to evolve the time-averaged scalar transport equation without requiring the use of turbulence modeling. With this technique, passive dispersion of a scalar from a boundary layer surface in a supersonic flow is studied with scalar flux modeling error isolated from any flowfield modeling errors. Several different scalar flux models are used. It is seen that the simple gradient diffusion model overpredicts scalar dispersion, while anisotropic scalar flux models underpredict dispersion. Further, the use of more complex models does not necessarily guarantee an increase in predictive accuracy, indicating that key physics is missing from existing models. Using comparisons of both a priori and a posteriori scalar flux evaluations with DNS data, the main modeling shortcomings are identified. Results will be presented for different boundary layer conditions.

Study of thickness and uniformity of oxide passivation with DI-O3 on silicon substrate for electronic and photonic applications

NASA Astrophysics Data System (ADS)

Sharma, Mamta; Hazra, Purnima; Singh, Satyendra Kumar

2018-05-01

Since the beginning of semiconductor fabrication technology evolution, clean and passivated substrate surface is one of the prime requirements for fabrication of Electronic and optoelectronic device fabrication. However, as the scale of silicon circuits and device architectures are continuously decreased from micrometer to nanometer (from VLSI to ULSI technology), the cleaning methods to achieve better wafer surface qualities has raised research interests. The development of controlled and uniform silicon dioxide is the most effective and reliable way to achieve better wafer surface quality for fabrication of electronic devices. On the other hand, in order to meet the requirement of high environment safety/regulatory standards, the innovation of cleaning technology is also in demand. The controlled silicon dioxide layer formed by oxidant de-ionized ozonated water has better uniformity. As the uniformity of the controlled silicon dioxide layer is improved on the substrate, it enhances the performance of the devices. We can increase the thickness of oxide layer, by increasing the ozone time treatment. We reported first time to measurement of thickness of controlled silicon dioxide layer and obtained the uniform layer for same ozone time.

Method for producing highly reflective metal surfaces

DOEpatents

Arnold, J.B.; Steger, P.J.; Wright, R.R.

1982-03-04

The invention is a novel method for producing mirror surfaces which are extremely smooth and which have high optical reflectivity. The method includes depositing, by electrolysis, an amorphous layer of nickel on an article and then diamond-machining the resulting nickel surface to increase its smoothness and reflectivity. The machined nickel surface then is passivated with respect to the formation of bonds with electrodeposited nickel. Nickel then is electrodeposited on the passivated surface to form a layer of electroplated nickel whose inside surface is a replica of the passivated surface. The mandrel then may be-re-passivated and provided with a layer of electrodeposited nickel, which is then recovered from the mandrel providing a second replica. The mandrel can be so re-used to provide many such replicas. As compared with producing each mirror-finished article by plating and diamond-machining, the new method is faster and less expensive.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kephart, Jason M.; Kindvall, Anna; Williams, Desiree

Commercial CdTe PV modules have polycrystalline thin films deposited on glass, and devices made in this format have exceeded 22% efficiency. Devices made by the authors with a magnesium zinc oxide window layer and tellurium back contact have achieved efficiency over 18%, but these cells still suffer from an open-circuit voltage far below ideal values. Oxide passivation layers made by sputter deposition have the potential to increase voltage by reducing interface recombination. CdTe devices with these passivation layers were studied with photoluminescence (PL) emission spectroscopy and time-resolved photoluminescence (TRPL) to detect an increase in minority carrier lifetime. Because these oxidemore » materials exhibit barriers to carrier collection, micropatterning was used to expose small point contacts while still allowing interface passivation. TRPL decay lifetimes have been greatly enhanced for thin polycrystalline absorber films with interface passivation. Device performance was measured and current collection was mapped spatially by light-beam-induced current.« less

Surface passivation of mixed-halide perovskite CsPb(BrxI1-x)3 nanocrystals by selective etching for improved stability.

PubMed

Jing, Qiang; Zhang, Mian; Huang, Xiang; Ren, Xiaoming; Wang, Peng; Lu, Zhenda

2017-06-08

In recent years, there has been an unprecedented rise in the research of halide perovskites because of their important optoelectronic applications, including photovoltaic cells, light-emitting diodes, photodetectors and lasers. The most pressing question concerns the stability of these materials. Here faster degradation and PL quenching are observed at higher iodine content for mixed-halide perovskite CsPb(Br x I 1-x ) 3 nanocrystals, and a simple yet effective method is reported to significantly enhance their stability. After selective etching with acetone, surface iodine is partially etched away to form a bromine-rich surface passivation layer on mixed-halide perovskite nanocrystals. This passivation layer remarkably stabilizes the nanocrystals, making their PL intensity improved by almost three orders of magnitude. It is expected that a similar passivation layer can also be applied to various other kinds of perovskite materials with poor stability issues.

Re-Active Passive devices for control of noise transmission through a panel

NASA Astrophysics Data System (ADS)

Carneal, James P.; Giovanardi, Marco; Fuller, Chris R.; Palumbo, Dan

2008-01-01

Re-Active Passive devices have been developed to control low-frequency (<1000 Hz) noise transmission through a panel. These devices use a combination of active, re-active, and passive technologies packaged into a single unit to control a broad frequency range utilizing the strength of each technology over its best suited frequency range. The Re-Active Passive device uses passive constrained layer damping to cover relatively high-frequency range (>150 Hz), reactive distributed vibration absorber to cover the medium-frequency range (50-200 Hz), and active control for controlling low frequencies (<150 Hz). The actuator was applied to control noise transmission through a panel mounted in the Transmission Loss Test Facility at Virginia Tech. Experimental results are presented for the bare panel, and combinations of passive treatment, reactive treatment, and active control. Results indicate that three Re-Active Passive devices were able to increase the overall broadband (15-1000 Hz) transmission loss by 9.4 dB. These three devices added a total of 285 g to the panel mass of 6.0 kg, or approximately 5%, not including control electronics.

Organic and inorganic passivation of p-type SnO thin-film transistors with different active layer thicknesses

NASA Astrophysics Data System (ADS)

Qu, Yunxiu; Yang, Jia; Li, Yunpeng; Zhang, Jiawei; Wang, Qingpu; Song, Aimin; Xin, Qian

2018-07-01

Bottom gated thin-film transistors (TFTs) with various sputtered SnO active layer thicknesses ranging from 10 to 30 nm and different passivation layers have been investigated. The device with 20 nm SnO showed the highest on/off ratio of 1.7 × 104 and the smallest subthreshold swing of 8.43 V dec‑1, and the mobility (0.76 cm2 V‑1 s‑1) was only slightly lower than in TFTs with a thicker SnO layer. However, both the mobility and the on/off ratio of the 15 nm SnO TFT dropped significantly by one order of magnitude. This indicated a strong influence of the top surface on the carrier transport, and we thus applied an organic or an inorganic encapsulation material to passivate the top surface. In the 20 nm TFT, the on/off ratio was doubled after passivation. The performance of the 15 nm TFT was improved even more dramatically with the on/off ratio increased by one order of magnitude and the mobility increased also significantly. Our experiment shows that polymethyl methacrylate passivation is more effective to reduce the shallow trap states, and Al2O3 is more effective in reducing the deep traps in the SnO channel.

Advanced passivation techniques for Si solar cells with high-κ dielectric materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geng, Huijuan; Lin, Tingjui; Letha, Ayra Jagadhamma

2014-09-22

Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al{sub 2}O{sub 3}, HfO{sub 2}) and their compounds H{sub (Hf)}A{sub (Al)}O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al{sub 2}O{sub 3} film has been found to provide negative fixed charge (−6.4 × 10{sup 11 }cm{sup −2}), whereas HfO{sub 2} film provides positivemore » fixed charge (3.2 × 10{sup 12 }cm{sup −2}). The effective lifetimes can be improved after oxygen gas annealing for 1 min. I-V characteristics of Si solar cells with high-κ dielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO{sub 2} film would provide better passivation properties than that of the ALD-Al{sub 2}O{sub 3} film in this research work.« less

Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

DOEpatents

Weihs, Timothy P.; Barbee, Jr., Troy W.

2002-01-01

Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors

NASA Astrophysics Data System (ADS)

Plis, E.; Kutty, M. N.; Myers, S.; Kim, H. S.; Gautam, N.; Dawson, L. R.; Krishna, S.

2011-05-01

We have investigated various passivation techniques for type-II InAs/GaSb strained layer superlattice (SLS) detectors with p-i-n and PbIbN designs with a 100%-cut-off wavelength of ˜12 μm at 77 K. The passivation schemes include dielectric deposition (silicon nitride (SiN x), silicon dioxide (SiO 2), photoresist (SU-8)), chalcogenide treatments (zinc sulfide (ZnS), ammonium sulfide [(NH 4) 2S]), and electrochemical sulphur deposition. [(NH 4) 2S] passivation and electrochemical sulphur passivation (ECP) showed the better performances, improving the dark current density by factors of 200 and 25 (p-i-n detector) and ˜3 and 54 (PbIbN detector), respectively ( T = 77 K, -0.1 V of applied bias). The specific detectivity D* was improved by a factor of 2 and by an order of magnitude for (NH 4) 2S and ECP passivated PbIbN detectors, respectively.

A MULTI-STREAM MODEL FOR VERTICAL MIXING OF A PASSIVE TRACER IN THE CONVECTIVE BOUNDARY LAYER

EPA Science Inventory

We study a multi-stream model (MSM) for vertical mixing of a passive tracer in the convective boundary layer, in which the tracer is advected by many vertical streams with different probabilities and diffused by small scale turbulence. We test the MSM algorithm for investigatin...

Effect of sulfur passivation on the InP surface prior to plasma-enhanced chemical vapor deposition of SiNx

NASA Astrophysics Data System (ADS)

Tang, Hengjing; Wu, Xiaoli; Xu, Qinfei; Liu, Hongyang; Zhang, Kefeng; Wang, Yang; He, Xiangrong; Li, Xue; Gong, Hai Mei

2008-03-01

The fabrication of Au/SiNx/InP metal-insulator-semiconductor (MIS) diodes has been achieved by depositing a layer of SiNx on the (NH4)2Sx-treated n-InP. The SiNx layer was deposited at 200 °C using plasma-enhanced chemical vapor deposition (PECVD). The effect of passivation on the InP surface before and after annealing was evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements, and Auger electron spectroscopy (AES) analysis was used to investigate the depth profiles of several atoms. The results indicate that the SiNx passivation layer exhibits good insulative characteristics. The annealing process causes distinct inter-diffusion in the SiNx/InP interface and contributes to the decrease of the fixed charge density and minimum interface state density, which are 1.96 × 1012 cm-2 and 7.41 × 1011 cm-2 eV-1, respectively. A 256 × 1 InP/InGaAs/InP heterojunction photodiode, fabricated with sulfidation and SiNx passivation layer, has good response uniformity.

Improved passivation effect in multicrystalline black silicon by chemical solution pre-treatment

NASA Astrophysics Data System (ADS)

Jiang, Ye; Shen, Honglie; Pu, Tian; Zheng, Chaofan

2018-04-01

Though black silicon has excellent anti-reflectance property, its passivation is one of the main technical bottlenecks due to its large specific surface area. In this paper, multicrystalline black silicon is fabricated by metal assisted chemical etching, and is rebuilt in low concentration alkali solution. Different solution pre-treatment is followed to make surface modification on black silicon before Al2O3 passivation by atomic layer deposition. HNO3 and H2SO4 + H2O2 solution pre-treatment makes the silicon surface become hydrophilic, with contact angle decrease from 117.28° to about 30°. It is demonstrated that when the pre-treatment solution is nitric acid, formed ultrathin SiO x layer between Al2O3 layer and black silicon is found to increase effective carrier lifetime to 72.64 µs, which is obviously higher than that of the unpassivated black silicon. The passivation stacks of SiO x /Al2O3 are proved to be effective double layers for nanoscaled multicrystalline silicon surface.

Static and Dynamic Water Motion-Induced Instability in Oxide Thin-Film Transistors and Its Suppression by Using Low-k Fluoropolymer Passivation.

PubMed

Choi, Seungbeom; Jo, Jeong-Wan; Kim, Jaeyoung; Song, Seungho; Kim, Jaekyun; Park, Sung Kyu; Kim, Yong-Hoon

2017-08-09

Here, we report static and dynamic water motion-induced instability in indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) and its effective suppression with the use of a simple, solution-processed low-k (ε ∼ 1.9) fluoroplastic resin (FPR) passivation layer. The liquid-contact electrification effect, in which an undesirable drain current modulation is induced by a dynamic motion of a charged liquid such as water, can cause a significant instability in IGZO TFTs. It was found that by adopting a thin (∼44 nm) FPR passivation layer for IGZO TFTs, the current modulation induced by the water-contact electrification was greatly reduced in both off- and on-states of the device. In addition, the FPR-passivated IGZO TFTs exhibited an excellent stability to static water exposure (a threshold voltage shift of +0.8 V upon 3600 s of water soaking), which is attributed to the hydrophobicity of the FPR passivation layer. Here, we discuss the origin of the current instability caused by the liquid-contact electrification as well as various static and dynamic stability tests for IGZO TFTs. On the basis of our findings, we believe that the use of a thin, solution-processed FPR passivation layer is effective in suppressing the static and dynamic water motion-induced instabilities, which may enable the realization of high-performance and environment-stable oxide TFTs for emerging wearable and skin-like electronics.

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation.

PubMed

Na, Junhong; Joo, Min-Kyu; Shin, Minju; Huh, Junghwan; Kim, Jae-Sung; Piao, Mingxing; Jin, Jun-Eon; Jang, Ho-Kyun; Choi, Hyung Jong; Shim, Joon Hyung; Kim, Gyu-Tae

2014-01-07

Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated with trapping/detrapping the charge carriers at the interface nicely described the noise behavior in the strong accumulation regime both with and without the Al2O3 passivation layer. The interface trap density at the MoS2-SiO2 interface was extracted from the LFN analysis, and estimated to be Nit ~ 10(10) eV(-1) cm(-2) without and with the passivation layer. This suggested that the accumulation channel induced by the back-gate was not significantly influenced by the passivation layer. The Hooge mobility fluctuation (HMF) model implying the bulk conduction was found to describe the drain current fluctuations in the subthreshold regime, which is rarely observed in other nanodevices, attributed to those extremely thin channel sizes. In the case of the thick-MoS2 (~40 nm-thick) without the passivation, the HMF model was clearly observed all over the operation regime, ensuring the existence of the bulk conduction in multilayer MoS2. With the Al2O3 passivation layer, the change in the noise behavior was explained from the point of formation of the additional top channel in the MoS2 because of the fixed charges in the Al2O3. The interface trap density from the additional CNF model was Nit = 1.8 × 10(12) eV(-1) cm(-2) at the MoS2-Al2O3 interface.

Low temperature surface passivation of crystalline silicon and its application to interdigitated back contact silicon heterojunction (ibc-shj) solar cell

NASA Astrophysics Data System (ADS)

Shu, Zhan

With the absence of shading loss together with improved quality of surface passivation introduced by low temperature processed amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction, the interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell exhibits a potential for higher conversion efficiency and lower cost than a traditional front contact diffused junction solar cell. In such solar cells, the front surface passivation is of great importance to achieve both high open-circuit voltage (Voc) and short-circuit current (Jsc). Therefore, the motivation of this work is to develop a low temperature processed structure for the front surface passivation of IBC-SHJ solar cells, which must have an excellent and stable passivation quality as well as a good anti-reflection property. Four different thin film materials/structures were studied and evaluated for this purpose, namely: amorphous silicon nitride (a-SiNx:H), thick amorphous silicon film (a-Si:H), amorphous silicon/silicon nitride/silicon carbide (a-Si:H/a-SiN x:H/a-SiC:H) stack structure with an ultra-thin a-Si:H layer, and zinc sulfide (ZnS). It was demonstrated that the a-Si:H/a-SiNx:H/a-SiC:H stack surpasses other candidates due to both of its excellent surface passivation quality (SRV<5 cm/s) and lower absorption losses. The low recombination rate at the stack structure passivated c-Si surface is found to be resulted from (i) field effect passivation due to the positive fixed charge (Q fix~1x1011 cm-2 with 5 nm a-Si:H layer) in a-SiNx:H as measured from capacitance-voltage technique, and (ii) reduced defect state density (mid-gap Dit~4x1010 cm-2eV-1) at a-Si:H/c-Si interface provided by a 5 nm thick a-Si:H layer, as characterized by conductance-frequency measurements. Paralleled with the experimental studies, a computer program was developed in this work based on the extended Shockley-Read-Hall (SRH) model of surface recombination. With the help of this program, the experimental injection level dependent SRV curves of the stack passivated c-Si samples were successfully reproduced and the carrier capture cross sections of interface defect states were extracted. Additionally, anti-reflection properties of the stack structure were optimized and optical losses were analyzed. The Voc over 700 mV and Jsc over 38 mA/cm2 were achieved in IBC-SHJ solar cells using the stack structure for front surface passivation. Direct comparison shows that such low temperature deposited stack structure developed in this work achieves comparable device performance to the high temperature processed front surface passivation structure used in other high efficiency IBC solar cells. However, the lower fill factor (FF) of IBC-SHJ solar cell as compared with traditional front a-Si:H/c-Si heterojunction cell (HIT cell) greatly limits the overall performance of these devices. Two-dimensional (2D) simulations were used to comparatively model the HIT and IBC-SHJ solar cells to understand the underlying device physics which controls cell performance. The effects of a wide range of device parameters were investigated in the simulation, and pathways to improve the FF of IBC-SHJ solar cell were suggested.

Chemical and physical passivation of type II strained-layer superlattice devices by means of thiolated self-assembled monolayers and polymer encapsulates

NASA Astrophysics Data System (ADS)

Henry, Nathan C.; Knorr, Daniel B.; Williams, Kristen S.; Baril, Neil; Nallon, Eric; Lenhart, Joseph L.; Andzelm, Jan W.; Pellegrino, Joseph; Tidrow, Meimei; Cleveland, Erin; Bandara, Sumith

2015-05-01

The efficacy of solution deposition of thiolated self-assembled monolayers (SAMs) has been explored for the purpose of passivating III-V type II superlattice (T2SL) photodetectors, more specifically a p-type heterojunction device. Sulfur passivation has previously been achieved on T2SL devices. However, degradation over time, temperature sensitivity and inconsistent reproducibility necessitate a physical encapsulate that can chemically bond to the chemical passivant. Thus, this research investigates two passivation methods, surface passivation with a thiol monolayer and passivation with a polymer encapsulant with a view toward future combination of these techniques. Analysis of the physical and chemical condition of the surface prior to deposition assisted in the development of ideal processes for optimized film quality. Successful deposition was facilitated by in situ oxide removal. Various commercially available functional (cysteamine) and non-functional (alkane) thiolated monolayers were investigated. Dark current was reduced by 3 orders of magnitude and achieved negligible surface leakage at low bias levels. The lowest dark current result, 7.69 × 10-6 A/cm2 at 50 mV, was achieved through passivation with cysteamine.

Evaluation of Non-Chromate Passivations on Electroplated gamma-Phase Zinc Nickel

NASA Astrophysics Data System (ADS)

Volz, Steven Michael

This research focused on the corrosion response and electrochemical behavior of electroplated low hydrogen embrittlement alkaline gamma-phase zinc nickel with passivation layers. The motivation was the need to replace hexavalent chromium conversion coatings in military grade electrical systems with a more environment friendly alternative. The passivation layers were employed for the purpose of mitigating corrosion attack while maintaining low contact resistance. Trivalent chromium-based passivations and cerium-based passivations were compared against the currently used hexavalent chromium conversion coating. The coating systems were compared using electrochemical impedance spectroscopy, cyclic potentiodymanic scans, salt spray exposure testing, electrical resistance measurements, microstructure analysis, and compositional analysis. Coating systems with lower open circuit had a lower corrosion current and performed better during salt spray testing. All of the systems evaluated had corrosion products consistent with oxidized zinc compounds but the morphology of the passivation was dependent on the passivation. The electrical contact resistance ranged from 1 to 108 mO/cm 2, after salt spray testing. Two versions of Trivalent chromium-based passivations, were able to meet military performance specifications after corrosion testing.

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reichel, Christian, E-mail: christian.reichel@ise.fraunhofer.de; National Renewable Energy Laboratory; Feldmann, Frank

Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells.more » Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.« less

Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

PubMed

Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

2015-01-01

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

Complete passive vibration suppression using multi-layered piezoelectric element, inductor, and resistor

NASA Astrophysics Data System (ADS)

Yamada, Keisuke

2017-01-01

This paper describes passive technique for suppressing vibration in flexible structures using a multi-layered piezoelectric element, an inductor, and a resistor. The objective of using a multi-layered piezoelectric element is to increase its capacitance. A piezoelectric element with a large capacitance value does not require an active electrical circuit to simulate an inductor with a large inductance value. The effect of multi-layering of piezoelectric elements was theoretically analyzed through an equivalent transformation of a multi-layered piezoelectric element into a single-layered piezoelectric element. The governing equations were derived using this equivalent transformation. The effect of the resistances of the inductor and piezoelectric elements were considered because the sum of these resistances may exceed the optimum resistance. The performance of the passive vibration suppression using an LR circuit was compared to that of the method where a resistive circuit is used assuming that the sum of the resistances of the inductor and piezoelectric elements exceeds the optimum resistance. The effectiveness of the proposed method and theoretical analysis was verified through simulations and experiments.

Dynamic analysis to evaluate viscoelastic passive damping augmentation for the Space Shuttle Remote Manipulator System

NASA Technical Reports Server (NTRS)

Alberts, Thomas E.; Xia, Houchun; Chen, Yung

1992-01-01

The effectiveness of constrained viscoelastic layer damping treatment designs is evaluated separately as passive control measures for low frequency joint dominated modes and higher frequency boom flexure dominated modes using a NASTRAN finite element analysis. Passive damping augmentation is proposed which is based on a constrained viscoelastic layer damping treatment applied to the surface of the manipulators's flexible booms. It is pointed out that even the joint compliance dominated modes can be damped to some degree through appropriate design of the treatment.

Surface passivation for CdTe devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reese, Matthew O.; Perkins, Craig L.; Burst, James M.

2017-08-01

In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

Passivated p-type silicon: Hole injection tunable anode material for organic light emission

NASA Astrophysics Data System (ADS)

Zhao, W. Q.; Ran, G. Z.; Xu, W. J.; Qin, G. G.

2008-02-01

We find that hole injection can be enhanced simply by selecting a lower-resistivity p-Si anode to match an electron injection enhancement for organic light emitting diodes with ultrathin-SiO2-layer-passivated p-Si anode (Si-OLED). For a Si-OLED with ordinary AlQ electron transport layer, the optimized resistivity of the p-Si anode is 40Ωcm; for that with n-doped Bphen electron transport layer, it decreases to 5Ωcm. Correspondingly, the maximum power efficiency increases from 0.3to1.9lm /W, even higher than that of an indium tin oxide control device (1.4lm/W). This passivated p-type silicon is a hole injection tunable anode material for OLED.

An Artificial Lithium Protective Layer that Enables the Use of Acetonitrile-Based Electrolytes in Lithium Metal Batteries.

PubMed

Trinh, Ngoc Duc; Lepage, David; Aymé-Perrot, David; Badia, Antonella; Dollé, Mickael; Rochefort, Dominic

2018-04-23

The resurgence of the lithium metal battery requires innovations in technology, including the use of non-conventional liquid electrolytes. The inherent electrochemical potential of lithium metal (-3.04 V vs. SHE) inevitably limits its use in many solvents, such as acetonitrile, which could provide electrolytes with increased conductivity. The aim of this work is to produce an artificial passivation layer at the lithium metal/electrolyte interface that is electrochemically stable in acetonitrile-based electrolytes. To produce such a stable interface, the lithium metal was immersed in fluoroethylene carbonate (FEC) to generate a passivation layer via the spontaneous decomposition of the solvent. With this passivation layer, the chemical stability of lithium metal is shown for the first time in 1 m LiPF 6 in acetonitrile. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface Passivation of ZrO2 Artificial Dentures by Magnetized Coaxial Plasma deposition

NASA Astrophysics Data System (ADS)

Arai, Soya; Kurumi, Satoshi; Matsuda, Ken-Ichi; Suzuki, Kaoru; Hara, Katsuya; Kato, Tatsuya; Asai, Tomohiko; Hirose, Hideharu; Masutani, Shigeyuki; Nihon University Team

2015-09-01

Recent growth and fabrication technologies for functional materials have been greatly contributed to drastic development of oral surgery field. Zirconia based ceramics is expected to utilize artificial dentures because these ceramics have good biocompatibility, high hardness and aesthetic attractively. However, to apply these ceramics to artificial dentures, this denture is removed from a dental plate because of weakly bond. For improving this problem, synthesis an Al passivation-layer on the ceramics for bonding with these dental items is suitable. In order to deposit the passivation layer, we focused on a magnetized coaxial plasma deposition (MCPD). The greatest characteristic of MCPD is that high-melting point metal can be deposited on various substrates. Additionally, adhesion force between substrate and films deposited by the MCPD is superior to it of general deposition methods. In this study, we have reported on the growth techniques of Al films on ZrO2 for contributing to oral surgery by the MCPD. Surface of deposited films shows there were some droplets and thickness of it is about 200 nm. Thickness is increased to 500 nm with increasing applied voltage.

A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

NASA Astrophysics Data System (ADS)

Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

2017-08-01

Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

Viscous drag reduction in boundary layers

NASA Technical Reports Server (NTRS)

Bushnell, Dennis M. (Editor); Hefner, Jerry N. (Editor)

1990-01-01

The present volume discusses the development status of stability theory for laminar flow control design, applied aspects of laminar-flow technology, transition delays using compliant walls, the application of CFD to skin friction drag-reduction, active-wave control of boundary-layer transitions, and such passive turbulent-drag reduction methods as outer-layer manipulators and complex-curvature concepts. Also treated are such active turbulent drag-reduction technique applications as those pertinent to MHD flow drag reduction, as well as drag reduction in liquid boundary layers by gas injection, drag reduction by means of polymers and surfactants, drag reduction by particle addition, viscous drag reduction via surface mass injection, and interactive wall-turbulence control.

Effect of PECVD SiNx/SiOyNx-Si interface property on surface passivation of silicon wafer

NASA Astrophysics Data System (ADS)

Jia, Xiao-Jie; Zhou, Chun-Lan; Zhu, Jun-Jie; Zhou, Su; Wang, Wen-Jing

2016-12-01

It is studied in this paper that the electrical characteristics of the interface between SiOyNx/SiNx stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiOyNx layer on interface parameters, such as interface state density Dit and fixed charge Qf, and the surface passivation quality of silicon are observed. Capacitance-voltage measurements reveal that inserting a thin SiOyNx layer between the SiNx and the silicon wafer can suppress Qf in the film and Dit at the interface. The positive Qf and Dit and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiOyNx film increasing. Prepared by deposition at a low temperature and a low ratio of N2O/SiH4 flow rate, the SiOyNx/SiNx stacks result in a low effective surface recombination velocity (Seff) of 6 cm/s on a p-type 1 Ω·cm-5 Ω·cm FZ silicon wafer. The positive relationship between Seff and Dit suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA050302) and the National Natural Science Foundation of China (Grant No. 61306076).

The role of halide ions on the electrochemical behaviour of iron in alkali solutions

NASA Astrophysics Data System (ADS)

Begum, S. Nathira; Muralidharan, V. S.; Basha, C. Ahmed

2008-02-01

Active dissolution and passivation of transition metals in alkali solutions is of technological importance in batteries. The performance of alkaline batteries is decided by the presence of halides as they influence passivation. Cyclic voltammetric studies were carried out on iron in different sodium hydroxide solutions in presence of halides. In alkali solutions iron formed hydroxo complexes and their polymers in the interfacial diffusion layer. With progress of time they formed a cation selective layer. The diffusion layer turned into bipolar ion selective layer consisted of halides, a selective inner sublayer to the metal side and cation selective outer layer to the solution side. At very high anodic potentials, dehydration and deprotonation led to the conversion of salt layer into an oxide.

ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs

NASA Astrophysics Data System (ADS)

Pavlidis, S.; Bayraktaroglu, B.; Leedy, K.; Henderson, W.; Vogel, E.; Brand, O.

2017-11-01

The suitability of atomic layer deposited (ALD) titanium oxide (TiO x ) as a top gate dielectric and passivation layer for indium gallium zinc oxide (InGaZnO115) ion sensitive field effect transistors (ISFETs) is investigated. TiO x is an attractive barrier material, but reports of its use for InGaZnO thin film transistor (TFT) passivation have been conflicting thus far. In this work, it is found that the passivated TFT’s behavior depends on the TiO x deposition temperature, affecting critical device characteristics such as threshold voltage, field-effect mobility and sub-threshold swing. An O2 annealing step is required to recover TFT performance post passivation. It is also observed that the positive bias stress response of the passivated TFTs improves compared the original bare device. Secondary ion mass spectroscopy excludes the effects of hydrogen doping and inter-diffusion as sources of the temperature-dependent performance change, therefore indicating that oxygen gettering induced by TiO x passivation is the likely source of oxygen vacancies and, consequently, carriers in the InGaZnO film. It is also shown that potentiometric sensing using ALD TiO x exhibits a near Nernstian response to pH change, as well as minimizes V TH drift in TiO x passivated InGaZnO TFTs immersed in an acidic liquid. These results add to the understanding of InGaZnO passivation effects and underscore the potential for low-temperature fabricated InGaZnO ISFETs to be used as high-performance mobile chemical sensors.

Passivation and Depassivation of Defects in Graphene-based field-effect transistors

NASA Astrophysics Data System (ADS)

O'Hara, Andrew; Wang, Pan; Perini, Chris J.; Fleetwood, Daniel M.; Vogel, Eric M.; Pantelides, Sokrates T.

Field effect transistors based on graphene on amorphous SiO2 substrates were fabricated, both with and without a top oxide passivation layer of Al2O3. Initial I-V characteristics of these devices show that the Fermi energy occurs below the Dirac point in graphene (i.e. p-type behavior). Introduction of environmental stresses, e.g. baking the devices, causes a shift in the Fermi energy relative to the Dirac point. 1/f noise measurements indicate the presence of charge trapping defects. In order to find the origins of this behavior, we construct atomistic models of the substrate/graphene interface and the graphene/oxide passivation layer interface. Using density functional theory, we investigate the role that the introduction and removal of hydrogen and hydroxide passivants has on the electronic structure of the graphene layer as well as the relative energetics for these processes to occur in order to gain insights into the experimental results. Supported by DTRA: 1-16-0032 and NSF: ECCS-1508898.

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, M.W.

1990-06-19

A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, Mark W.

1990-01-01

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seif, Johannes Peter, E-mail: johannes.seif@alumni.epfl.ch; Ballif, Christophe; De Wolf, Stefaan

Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers—inserted between substrate and (front or rear) contacts—since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. As a consequence, device implementation ofmore » such films as window layers—without degraded carrier collection—demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Amorphous and crystalline silicon based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Schüttauf, J. A.

2011-10-01

In this thesis, research on amorphous and crystalline silicon heterojunction (SHJ) solar cells is described. Probably the most important feature of SHJ solar cells is a thin intrinsic amorphous silicion (a-Si:H) layer that is deposited before depositing the doped emitter and back surface field. The passivation properties of such intrinsic layers made by three different chemical vapor deposition (CVD) techniques have been investigated. For layers deposited at 130°C, all techniques show a strong reduction in surface recombination velocity (SRV) after annealing. Modelling indicates that dangling bond saturation by atomic hydrogen is the predominant mechanism. We obtain outstanding carrier lifetimes of 10.3 ms, corresponding to SRVs of 0.56 cm/s. For a-Si:H films made at 250°C, an as-deposited minority carrier lifetime of 2.0 ms is observed. In contrast to a-Si:H films fabricated at 130°C, however, no change in passivation quality upon thermal annealing is observed. These films were fabricated for the first time using a continuous in-line HWCVD mode. Wafer cleaning before a-Si:H deposition is a crucial step for c-Si surface passivation. We tested the influence of an atomic hydrogen treatment before a-Si:H deposition on the c-Si surface. The treatments were performed in a new virgin chamber to exclude Si deposition from the chamber walls. Subsequently, we deposited a-Si:H layers onto the c-Si wafers and measured the lifetime for different H treatment times. We found that increasing hydrogen treatment times led to lower effective lifetimes. Modelling of the measured minority carrier lifetime data shows that the decreased passivation quality is caused by an increased defect density at the amorphous-crystalline interface. Furtheremore, the passivation of different a-Si:H containing layers have been tested. For intrinsic films and intrinsic/n-type stacks, an improvement in passivation up to 255°C and 270°C is observed. This improvement is attributed to dangling bond saturation by H, whereas the decrease at higher temperatures is caused by H effusion. For intrinsic/n-type a-Si:H layer stacks, a record minority carrier lifetime of 13.3 ms is obtained. In contrast, for intrinsic/p-type a-Si:H layer stacks, a deterioration in passivation is observed over the whole temperature range, due to the asymmetric Fermi-level dependent defect formation enthalpy in n- and p-type a-Si:H. Comparing the lifetime values and trends for the different layer stacks to the performance of the corresponding cells, it is observed that the intrinsic/p-layer stack is limiting device performance. Based on these findings, the solar cells were prepared in a modified order, reaching an efficiency of 16.7% (VOC = 681 mV), versus 15.8% (VOC = 659 mV) in the ‘standard’ order. Finally, transparent conductive oxide (TCO) layers are studied for application into solar cells. It is observed that both types of TCO deposition have no significant influence on the passivation properties of standard a-Si:H layer stacks forming the emitter structure in the used SHJ cells. On flat wafers, a conversion efficiency of 16.7% has been obtained when ITO is used as TCO, versus an efficiency of 16.3% for ZnO:Al; slightly lower due to increased electrical losses.

Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography

DOEpatents

Montcalm, Claude; Stearns, Daniel G.; Vernon, Stephen P.

1999-01-01

A passivating overcoat bilayer is used for multilayer reflective coatings for extreme ultraviolet (EUV) or soft x-ray applications to prevent oxidation and corrosion of the multilayer coating, thereby improving the EUV optical performance. The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top layer of an elemental or a compound material that resists oxidation and corrosion. Materials for the top layer include carbon, palladium, carbides, borides, nitrides, and oxides. The thicknesses of the two layers that make up the overcoat bilayer are optimized to produce the highest reflectance at the wavelength range of operation. Protective overcoat systems comprising three or more layers are also possible.

Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

NASA Astrophysics Data System (ADS)

Kim, Kyoung H.; Gordon, Roy G.; Ritenour, Andrew; Antoniadis, Dimitri A.

2007-05-01

Atomic layer deposition (ALD) was used to deposit passivating interfacial nitride layers between Ge and high-κ oxides. High-κ oxides on Ge surfaces passivated by ultrathin (1-2nm) ALD Hf3N4 or AlN layers exhibited well-behaved C-V characteristics with an equivalent oxide thickness as low as 0.8nm, no significant flatband voltage shifts, and midgap density of interface states values of 2×1012cm-1eV-1. Functional n-channel and p-channel Ge field effect transistors with nitride interlayer/high-κ oxide/metal gate stacks are demonstrated.

Multi-layer light-weight protective coating and method for application

NASA Technical Reports Server (NTRS)

Wiedemann, Karl E. (Inventor); Clark, Ronald K. (Inventor); Taylor, Patrick J. (Inventor)

1992-01-01

A thin, light-weight, multi-layer coating is provided for protecting metals and their alloys from environmental attack at high temperatures. A reaction barrier is applied to the metal substrate and a diffusion barrier is then applied to the reaction barrier. A sealant layer may also be applied to the diffusion barrier if desired. The reaction barrier is either non-reactive or passivating with respect to the metal substrate and the diffusion barrier. The diffusion barrier is either non-reactive or passivating with respect to the reaction barrier and the sealant layer. The sealant layer is immiscible with the diffusion barrier and has a softening point below the expected use temperature of the metal.

Reliability and efficacy of organic passivation for polycrystalline silicon solar cells at room temperature

NASA Astrophysics Data System (ADS)

Shinde, Onkar S.; Funde, Adinath M.; Jadkar, Sandesh R.; Dusane, Rajiv O.; Dhere, Neelkanth G.; Ghaisas, Subhash V.

2016-09-01

Oleylamine is used as a passivating layer instead of commercial high temperature SiNx. Oleylamine coating applied on the n-type emitter side with p-type base polycrystalline silicon solar cells at room temperature using a simple spin coating method. It has been observed that there is 16% increase in efficiency after Oleylamine coating. Further, the solar cell was subjected to standard characterization namely current-voltage measurement for electrical parameters and Fourier transform infrared spectroscopy to understand the interaction of emitter surface and passivating Oleylamine. However, the passivation layer is not stable due to the reaction between Oleylamine and ambient air content such as humidity and carbon dioxide. This degradation can be prevented with suitable overcoating.

Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

NASA Astrophysics Data System (ADS)

Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

2016-09-01

The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

Alternative to Nitric Acid Passivation Project Overview

NASA Technical Reports Server (NTRS)

Lewis, Pattie L.

2013-01-01

The standard practice for protection of stainless steel is a process called passivation. This procedure results in the formation of a metal oxide layer to prevent corrosion. Typical passivation procedures call for the use of nitric acid which exhibits excellent corrosion performance; however, there are a number of environmental, worker safety, and operational issues associated with its use. The longtime military specification for the passivation of stainless steel was cancelled in favor of newer specifications which allow for the use of citric acid in place of nitric acid. Citric acid offers a variety of benefits that include increased safety for personnel, reduced environmental impact, and reduced operational costs. There have been few studies, however, to determine whether citric acid is an acceptable alternative for NASA and DoD. This paper details activities to date including development of the joint test plan, on-going and planned testing, and preliminary results.

Measurement of indoor formaldehyde concentrations with a passive sampler

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gillett, R.W.; Kreibich, H.; Ayers, G.P.

2000-05-15

An existing Ferm-type passive sampler technique has been further developed to measure concentrations of formaldehyde gas in indoor air. Formaldehyde forms a derivative after reaction with a filter coated with 2,4-dinitrophenylhydrazine (2,4-DNPH). The formaldehyde 2,4-dinitrophenylhydrazine derivative (formaldehyde-2,4-DNPH) is extracted from the filter, and the concentration is determined by high-performance liquid chromatography. The technique has been validated against an active sampling method, and the agreement is close when the appropriate laminar boundary layer depth is applied to the passive measurement. For this technique an exposure period of 3 days is equivalent to a limit of detection of formaldehyde of 3.4 ppbvmore » and a limit of quantification of 7.6 ppbv. To test the performance of the passive samplers ambient formaldehyde measurements were carried out inside homes and in a range of workplace environments.« less

Highly condensed fluorinated methacrylate hybrid material for transparent low-kappa passivation layer in LCD-TFT.

PubMed

Oh, Ji-Hoon; Kwak, Seung-Yeon; Yang, Seung-Cheol; Bae, Byeong-Soo

2010-03-01

Photocurable and highly condensed fluorinated methacrylate oligosiloxane, with a low dielectric constant (kappa = 2.54), was prepared by a nonhydrolytic sol-gel condensation reaction. The oligosiloxane resin was then spin-coated, photocured, and thermally baked in order to fabricate a fluorinated methacrylate hybrid material (FM hybrimer) thin film. This study investigated the application of this FM hybrimer film as a low-kappa passivation layer in LCD-based thin film transistors (TFT). It was found that a dielectric constant as low as kappa = 2.54 could be obtained, without introducing pores in the dense FM hybrimer films. This study compares FM hybrimer film characteristics with those required for passivation layers in LCD-TFTs, including thermal stability, optical transmittance, hydrophobicity, gap fill, and planarization effects as well as electrical insulation.

Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

DOE PAGES

Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; ...

2015-03-02

Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devicesmore » with high Voc values at 25°C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.« less

X-Ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well

NASA Astrophysics Data System (ADS)

Takahashi, Hiroshi; Hashizume, Tamotsu; Hasegawa, Hideki

1999-02-01

In order to understand and optimize a novel oxide-free InP passivation process using a silicon surface quantum well, a detailed in situ X-ray photoelectron spectroscopy (XPS) and ultrahigh vacuum (UHV) contactless capacitance-voltage (C-V) study of the interface was carried out. Calculation of quantum levels in the silicon quantum well was performed on the basis of the band lineup of the strained Si3N4/Si/InP interface and the result indicated that the interface should become free of gap states when the silicon layer thickness is below 5 Å. Experimentally, such a delicate Si3N4/Si/InP structure was realized by partial nitridation of a molecular beam epitaxially (MBE) grown pseudomorphic silicon layer using an electron cyclotron resonance (ECR) N2 plasma. The progress of nitridation was investigated in detail by angle-resolved XPS. A newly developed UHV contactless C-V method realized in situ characterization of surface electronic properties of InP at each processing step for passivation. It was found that the interface state density decreased substantially into the 1010 cm-2 eV-1 range by optimizing the nitridation process of the silicon layer. It was concluded that both the surface bond termination and state removal by quantum confinement are responsible for the NSS reduction.

Status and Progress of High-efficiency Silicon Solar Cells

NASA Astrophysics Data System (ADS)

Xiao, Shaoqing; Xu, Shuyan

High-efficiency Si solar cells have attracted more and more attention from researchers, scientists, engineers of photovoltaic (PV) industry for the past few decades. Many high-quality researchers and engineers in both academia and industry seek solutions to improve the cell efficiency and reduce the cost. This desire has stimulated a growing number of major research and research infrastructure programmes, and a rapidly increasing number of publications in this filed. This chapter reviews materials, devices and physics of high-efficiency Si solar cells developed over the last 20 years. In this chapter there is a fair number of topics, not only from the material viewpoint, introducing various materials that are required for high-efficiency Si solar cells, such as base materials (FZ-Si, CZ-Si, MCZ-Si and multi-Si), emitter materials (diffused emitter and deposited emitter), passivation materials (Al-back surface field, high-low junction, SiO2, SiO x , SiN x , Al2O3 and a-Si:H), and other functional materials (antireflective layer, TCO and metal electrode), but also from the device and physics point of view, elaborating on physics, cell concept, development and status of all kinds of high-efficiency Si solar cells, such as passivated emitter and rear contact (PERC), passivated emitter and rear locally diffused (PERL), passivated emitter and rear totally diffused (PERT), Pluto, interdigitated back-contacted (IBC), emitter-wrap-through (EWT), metallization-wrap-through (MWT), Heterojunction with intrinsic thin-layer (HIT) and so on. Some representative examples of high-efficiency Si solar cell materials and devices with excellent performance and competitive advantages are presented.

Distinct kinetics and mechanisms of mZVI particles aging in saline and fresh groundwater: H2 Evolution and surface passivation

NASA Astrophysics Data System (ADS)

Xin, Jia; Tang, Fenglin; Zheng, Xilai

2016-04-01

Application of microscale zero-valent iron (mZVI) is a promising technology for in-situ contaminated groundwater remediation. However, its longevity would be negatively impacted by surface passivation, especially in saline groundwater. In this study, the aging behaviors of mZVI particles were investigated in three media (milli-Q water, fresh groundwater and saline groundwater) using batch experiments to evaluate their potential corrosion and passivation performance in different field conditions. The results indicated that mZVI was reactive between 0-7 days exposure to water and then gradually lost reactivity over the next few hundred days. The patterns of kinetic curve were analogous among the three different media. In comparison, during the early phase (0-7 d), mZVI in saline groundwater showed a faster corrosion rate with a k value of 1.357, which was relatively higher than k values in milli-Q water and fresh groundwater. However, as the corrosion process further developed, the fastest corrosion rate was observed in milli-Q water followed with fresh groundwater and saline groundwater. These changes in reactivity provided evidence for different patterns and formation mechanisms of passive layers on mZVI in three media. The SEM-EDS analysis demonstrated that in the saline groundwater, a compact and even oxide film of carbonate green rust or Fe oxide (hydroxyl) species was formed immediately on the surface due to the high concentration and widely distributed bicarbonate and hardness, whereas in the fresh groundwater and milli-Q water, the passive layer was composed of loosely and unevenly distributed precipitates which much slowly formed as the iron corrosion proceeded. These findings provide insight into the molecular-scale mechanism of mZVI passivation by inorganic salts with particular implications in saline groundwater.

An in vitro evaluation of passive ultrasonic agitation of different irrigants on smear layer removal after post space preparation: a scanning electron microscopic study.

PubMed

Srirekha, A; Rashmi, K; Hegde, Jayshree; Lekha, S; Rupali, K; Reshmi, George

2013-09-01

This study evaluated the removal of debris and smear layer after post space preparation using different irrigations and passive ultrasonic agitation. Sixty human premolars were decoronated and post space prepared after endodontic therapy. The samples were then randomly divided into three experimental groups (Groups A, B, C) and one control group (Group D) with fifteen samples in each group. Groups A and B samples were treated with 10 % citric acid and 17 % ethylenediamintetraacetic acid (EDTA), respectively and passive ultrasonic agitation was done, rinsed with sodium hypochlorite and finally flushed with saline. Group C samples were conditioned with 36 % phosphoric acid and then rinsed with saline. The control group was treated with 3 % sodium hypochlorite, passive ultrasonic agitation done and flushed with saline. The samples were sectioned and evaluated for debris and smear layer removal under scanning electron microscope. 10 % citric acid showed the best removal of smear layer when compared with 17 % EDTA and 36 % phosphoric acid, but was not statistically significant (p > 0.05). The difference in scoring for debris and smear layer removal in the coronal, middle and apical third of post space of experimental groups in comparison with control group was statistically significant (p < 0.001).

Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer.

PubMed

Lee, Yonghui; Lee, Seunghwan; Seo, Gabseok; Paek, Sanghyun; Cho, Kyung Taek; Huckaba, Aron J; Calizzi, Marco; Choi, Dong-Won; Park, Jin-Seong; Lee, Dongwook; Lee, Hyo Joong; Asiri, Abdullah M; Nazeeruddin, Mohammad Khaja

2018-06-01

Planar perovskite solar cells using low-temperature atomic layer deposition (ALD) of the SnO 2 electron transporting layer (ETL), with excellent electron extraction and hole-blocking ability, offer significant advantages compared with high-temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO 2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO 2 is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%.

Structural and electrical investigations of a-Si:H(i) and a-Si:H(n+) stacked layers for improving the interface and passivation qualities

NASA Astrophysics Data System (ADS)

Hsieh, Yu-Lin; Lee, Chien-Chieh; Lu, Chia-Cheng; Fuh, Yiin-Kuen; Chang, Jenq-Yang; Lee, Ju-Yi; Li, Tomi T.

2017-07-01

A symmetrically stacked structure [(a-Si:H(n+)/a-Si:H(i)/CZ wafer (n)/a-Si:H(i)/a-Si:H(n+)] was used to optimize the growth process conditions of the n-type hydrogenated amorphous silicon [a-Si:H(n+)] thin films. Here a-Si:H(n+) film was used as back surface field (BSF) layer for the silicon heterojunction solar cell and all stacked films were prepared by conventional radio-frequency plasma-enhanced chemical vapor deposition. The characterizations of the effective carrier lifetime (τeff), electrical and structural properties, as well as correlation with the hydrogen dilution ratio (R=H2/SiH4) were systematically discussed with the emphasis on the effectiveness of the passivation layer using the lifetime tester, spectroscopic ellipsometry, and hall measurement. High quality of a stacked BSF layer (intrinsic/n-type a-Si:H layer) with effective carrier lifetime of 1.8 ms can be consistently obtained. This improved passivation layer can be primarily attributed to the synergy of chemical and field effect to significantly reduce the surface recombination.

Improved Stability and Performance of Visible Photoelectrochemical Water Splitting on Solution-Processed Organic Semiconductor Thin Films by Ultrathin Metal Oxide Passivation

DOE PAGES

Wang, Lei; Yan, Danhua; Shaffer, David W.; ...

2017-12-27

Solution-processable organic semiconductors have potentials as visible photoelectrochemical (PEC) water splitting photoelectrodes due to their tunable small band gap and electronic energy levels, but they are typically limited by poor stability and photocatalytic activity. In this study, we demonstrate the direct visible PEC water oxidation on solution-processed organic semiconductor thin films with improved stability and performance by ultrathin metal oxide passivation layers. N-type fullerene-derivative thin films passivated by sub-2 nm ZnO via atomic layer deposition enabled the visible PEC water oxidation at wavelengths longer than 600 nm in harsh alkaline electrolyte environments with up to 30 μA/cm 2 photocurrents atmore » the thermodynamic water-oxidation equilibrium potential and the photoanode half-lifetime extended to ~1000 s. The systematic investigation reveals the enhanced water oxidation catalytic activity afforded by ZnO passivation and the charge tunneling governing the hole transfer through passivation layers. Further enhanced PEC performances were realized by improving the bottom ohmic contact to the organic semiconductor, achieving ~60 μA/cm 2 water oxidation photocurrent at the equilibrium potential, the highest values reported for organic semiconductor thin films to our knowledge. The improved stability and performance of passivated organic photoelectrodes and discovered design rationales provide useful guidelines for realizing the stable visible solar PEC water splitting based on organic semiconductor thin films.« less

Improved Stability and Performance of Visible Photoelectrochemical Water Splitting on Solution-Processed Organic Semiconductor Thin Films by Ultrathin Metal Oxide Passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lei; Yan, Danhua; Shaffer, David W.

Solution-processable organic semiconductors have potentials as visible photoelectrochemical (PEC) water splitting photoelectrodes due to their tunable small band gap and electronic energy levels, but they are typically limited by poor stability and photocatalytic activity. In this study, we demonstrate the direct visible PEC water oxidation on solution-processed organic semiconductor thin films with improved stability and performance by ultrathin metal oxide passivation layers. N-type fullerene-derivative thin films passivated by sub-2 nm ZnO via atomic layer deposition enabled the visible PEC water oxidation at wavelengths longer than 600 nm in harsh alkaline electrolyte environments with up to 30 μA/cm 2 photocurrents atmore » the thermodynamic water-oxidation equilibrium potential and the photoanode half-lifetime extended to ~1000 s. The systematic investigation reveals the enhanced water oxidation catalytic activity afforded by ZnO passivation and the charge tunneling governing the hole transfer through passivation layers. Further enhanced PEC performances were realized by improving the bottom ohmic contact to the organic semiconductor, achieving ~60 μA/cm 2 water oxidation photocurrent at the equilibrium potential, the highest values reported for organic semiconductor thin films to our knowledge. The improved stability and performance of passivated organic photoelectrodes and discovered design rationales provide useful guidelines for realizing the stable visible solar PEC water splitting based on organic semiconductor thin films.« less

Preparation of SiO2 Passivation Thin Film for Improved the Organic Light-Emitting Device Life Time

NASA Astrophysics Data System (ADS)

Hong, Jeong Soo; Kim, Sang Mo; Kim, Kyung-Hwan

2011-08-01

To improve the organic light-emitting diode (OLED) lifetime, we prepared a SiO2 thin film for OLED passivation using a facing target sputtering (FTS) system as a function of oxygen gas flow rate and working pressure. The properties of the SiO2 thin film were examined by Fourier transform infrared (FT-IR), photoluminescence (PL) intensity measurement, field emission scanning electron microscopy (FE-SEM), and ultraviolet-visible (UV-vis) spectrometry that As a result, we found that a SiO2 thin film is formed at a 2 sccm oxygen gas flow rate and results the minimum damage to the organic layer is observed at a 1 mTorr working pressure. Also, from the water vapor transmission rate (WVTR), we observed that all of the as-deposited SiO2 thin films showed the ability of blocking moisture. After the properties were evaluated, an optimized SiO2 thin film was applied to OLED passivation. As a result, the property of the OLED fabricated by SiO2 passivation is similar to the OLED fabricated by glass passivation. However, the performance of OLED was degraded by enhancing of SiO2 passivation. This is the organic layer of the device is exposed to plasma for a prolonged period. Therefore, a method of minimizing damage to the organic layer and optimum conditions for what are important.

Physical-layer network coding for passive optical interconnect in datacenter networks.

PubMed

Lin, Rui; Cheng, Yuxin; Guan, Xun; Tang, Ming; Liu, Deming; Chan, Chun-Kit; Chen, Jiajia

2017-07-24

We introduce physical-layer network coding (PLNC) technique in a passive optical interconnect (POI) architecture for datacenter networks. The implementation of the PLNC in the POI at 2.5 Gb/s and 10Gb/s have been experimentally validated while the gains in terms of network layer performances have been investigated by simulation. The results reveal that in order to realize negligible packet drop, the wavelengths usage can be reduced by half while a significant improvement in packet delay especially under high traffic load can be achieved by employing PLNC over POI.

Numerical simulation of the control of the three-dimensional transition process in boundary layers

NASA Technical Reports Server (NTRS)

Kral, L. D.; Fasel, H. F.

1990-01-01

Surface heating techniques to control the three-dimensional laminar-turbulent transition process are numerically investigated for a water boundary layer. The Navier-Stokes and energy equations are solved using a fully implicit finite difference/spectral method. The spatially evolving boundary layer is simulated. Results of both passive and active methods of control are shown for small amplitude two-dimensional and three-dimensional disturbance waves. Control is also applied to the early stages of the secondary instability process using passive or active control techniques.

Hybrid passive/active damping for robust multivariable acoustic control in composite plates

NASA Astrophysics Data System (ADS)

Veeramani, Sudha; Wereley, Norman M.

1996-05-01

Noise transmission through a flexible kevlar-epoxy composite trim panel into an acoustic cavity or box is studied with the intent of controlling the interior sound fields. A hybrid noise attenuation technique is proposed which uses viscoelastic damping layers in the composite plate for passive attenuation of high frequency noise transmission, and uses piezo-electric patch actuators for active control in the low frequency range. An adaptive feedforward noise control strategy is applied. The passive structural damping augmentation incorporated in the composite plates is also intended to increase stability robustness of the active noise control strategy. A condenser microphone in the interior of the enclosure functions as the error sensor. Three composite plates were experimentally evaluated: one with no damping layer, the second with a 10 mil damping layer, and the third with a 15 mil damping layer. The damping layer was cocured in the kevlar-epoxy trim panels. Damping in the plates was increased from 1.6% for the plate with no damping layer, to 5.9% for the plate with a 15 mil damping layer. In experimental studies, the improved stability robustness of the controller was demonstrated by improved adaptive feedforward control algorithm convergence. A preliminary analytical model is presented that describes the dynamic behavior of a composite panel actuated by piezoelectric actuators bonded to its surface.

A review of the remote sensing of lower-tropospheric thermodynamic profiles and its indispensable role for the understanding and the simulation of water and energy cycles

DOE PAGES

Wulfmeyer, Volker; Hardesty, Mike; Turner, David D.; ...

2015-07-08

A review of remote sensing technology for lower-tropospheric thermodynamic (TD) profiling is presented with focus on high accuracy and high temporal-vertical resolution. The contributions of these instruments to the understanding of the Earth system are assessed with respect to radiative transfer, land-surface-atmosphere feedback, convection initiation, and data assimilation. We demonstrate that for progress in weather and climate research, TD profilers are essential. These observational systems must resolve gradients of humidity and temperature in the stable or unstable atmospheric surface layer close to the ground, in the mixed layer, in the interfacial layer – usually characterized by an inversion – andmore » the lower troposphere. A thorough analysis of the current observing systems is performed revealing significant gaps that must be addressed to fulfill existing needs. We analyze whether current and future passive and active remote sensing systems can close these gaps. A methodological analysis and demonstration of measurement capabilities with respect to bias and precision is executed both for passive and active remote sensing including passive infrared and microwave spectroscopy, the global positioning system as well as water-vapor and temperature Raman lidar and water-vapor differential absorption lidar. Whereas passive remote sensing systems are already mature with respect to operational applications, active remote sensing systems require further engineering to become operational in networks. However, active remote sensing systems provide a smaller bias as well as higher temporal and vertical resolutions. For a suitable mesoscale network design, TD profiler system developments should be intensified and dedicated observing system simulation experiments should be performed.« less

A review of the remote sensing of lower-tropospheric thermodynamic profiles and its indispensable role for the understanding and the simulation of water and energy cycles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wulfmeyer, Volker; Hardesty, Mike; Turner, David D.

A review of remote sensing technology for lower-tropospheric thermodynamic (TD) profiling is presented with focus on high accuracy and high temporal-vertical resolution. The contributions of these instruments to the understanding of the Earth system are assessed with respect to radiative transfer, land-surface-atmosphere feedback, convection initiation, and data assimilation. We demonstrate that for progress in weather and climate research, TD profilers are essential. These observational systems must resolve gradients of humidity and temperature in the stable or unstable atmospheric surface layer close to the ground, in the mixed layer, in the interfacial layer – usually characterized by an inversion – andmore » the lower troposphere. A thorough analysis of the current observing systems is performed revealing significant gaps that must be addressed to fulfill existing needs. We analyze whether current and future passive and active remote sensing systems can close these gaps. A methodological analysis and demonstration of measurement capabilities with respect to bias and precision is executed both for passive and active remote sensing including passive infrared and microwave spectroscopy, the global positioning system as well as water-vapor and temperature Raman lidar and water-vapor differential absorption lidar. Whereas passive remote sensing systems are already mature with respect to operational applications, active remote sensing systems require further engineering to become operational in networks. However, active remote sensing systems provide a smaller bias as well as higher temporal and vertical resolutions. For a suitable mesoscale network design, TD profiler system developments should be intensified and dedicated observing system simulation experiments should be performed.« less

Electrochemical Behavior Assessment of As-Cast Mg-Y-RE-Zr Alloy in Phosphate Buffer Solutions (X Na3PO4 + Y Na2HPO4) Using Electrochemical Impedance Spectroscopy and Mott-Schottky Techniques

NASA Astrophysics Data System (ADS)

Fattah-alhosseini, Arash; Asgari, Hamed

2018-05-01

In the present study, electrochemical behavior of as-cast Mg-Y-RE-Zr alloy (RE: rare-earth alloying elements) was investigated using electrochemical tests in phosphate buffer solutions (X Na3PO4 + Y Na2HPO4). X-ray diffraction techniques and Scanning electron microscopy equipped with energy dispersive x-ray spectroscopy were used to investigate the microstructure and phases of the experimental alloy. Different electrochemical tests such as potentiodynamic polarization (PDP), electrochemical impedance spectroscopy (EIS) and Mott-Schottky (M-S) analysis were carried out in order to study the electrochemical behavior of the experimental alloy in phosphate buffer solutions. The PDP curves and EIS measurements indicated that the passive behavior of the as-cast Mg-Y-RE-Zr alloy in phosphate buffer solutions was weakened by an increase in the pH, which is related to formation of an imperfect and less protective passive layer on the alloy surface. The presence of the insoluble zirconium particles along with high number of intermetallic phases of RE elements mainly Mg24Y5 in the magnesium matrix can deteriorate the corrosion performance of the alloy by disrupting the protective passive layer that is formed at pH values over 11. These insoluble zirconium particles embedded in the matrix can detrimentally influence the passivation. The M-S analysis revealed that the formed passive layers on Mg-Y-RE-Zr alloy behaved as an n-type semiconductor. An increase in donor concentration accompanying solutions of higher alkalinity is thought to result in the formation of a less resistive passive layer.

Zirconium oxide surface passivation of crystalline silicon

NASA Astrophysics Data System (ADS)

Wan, Yimao; Bullock, James; Hettick, Mark; Xu, Zhaoran; Yan, Di; Peng, Jun; Javey, Ali; Cuevas, Andres

2018-05-01

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited zirconium oxide (ZrOx). The optimum layer thickness and activation annealing conditions are determined to be 20 nm and 300 °C for 20 min. Cross-sectional transmission electron microscopy imaging shows an approximately 1.6 nm thick SiOx interfacial layer underneath an 18 nm ZrOx layer, consistent with ellipsometry measurements (˜20 nm). Capacitance-voltage measurements show that the annealed ZrOx film features a low interface defect density of 1.0 × 1011 cm-2 eV-1 and a low negative film charge density of -6 × 1010 cm-2. Effective lifetimes of 673 μs and 1.1 ms are achieved on p-type and n-type 1 Ω cm undiffused c-Si wafers, respectively, corresponding to an implied open circuit voltage above 720 mV in both cases. The results demonstrate that surface passivation quality provided by ALD ZrOx is consistent with the requirements of high efficiency silicon solar cells.

Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

NASA Astrophysics Data System (ADS)

Richter, Armin; Benick, Jan; Kimmerle, Achim; Hermle, Martin; Glunz, Stefan W.

2014-12-01

Thin layers of Al2O3 are well known for the excellent passivation of p-type c-Si surfaces including highly doped p+ emitters, due to a high density of fixed negative charges. Recent results indicate that Al2O3 can also provide a good passivation of certain phosphorus-diffused n+ c-Si surfaces. In this work, we studied the recombination at Al2O3 passivated n+ surfaces theoretically with device simulations and experimentally for Al2O3 deposited with atomic layer deposition. The simulation results indicate that there is a certain surface doping concentration, where the recombination is maximal due to depletion or weak inversion of the charge carriers at the c-Si/Al2O3 interface. This pronounced maximum was also observed experimentally for n+ surfaces passivated either with Al2O3 single layers or stacks of Al2O3 capped by SiNx, when activated with a low temperature anneal (425 °C). In contrast, for Al2O3/SiNx stacks activated with a short high-temperature firing process (800 °C) a significant lower surface recombination was observed for most n+ diffusion profiles without such a pronounced maximum. Based on experimentally determined interface properties and simulation results, we attribute this superior passivation quality after firing to a better chemical surface passivation, quantified by a lower interface defect density, in combination with a lower density of negative fixed charges. These experimental results reveal that Al2O3/SiNx stacks can provide not only excellent passivation on p+ surfaces but also on n+ surfaces for a wide range of surface doping concentrations when activated with short high-temperature treatments.

Online measurement of bead geometry in GMAW-based additive manufacturing using passive vision

NASA Astrophysics Data System (ADS)

Xiong, Jun; Zhang, Guangjun

2013-11-01

Additive manufacturing based on gas metal arc welding is an advanced technique for depositing fully dense components with low cost. Despite this fact, techniques to achieve accurate control and automation of the process have not yet been perfectly developed. The online measurement of the deposited bead geometry is a key problem for reliable control. In this work a passive vision-sensing system, comprising two cameras and composite filtering techniques, was proposed for real-time detection of the bead height and width through deposition of thin walls. The nozzle to the top surface distance was monitored for eliminating accumulated height errors during the multi-layer deposition process. Various image processing algorithms were applied and discussed for extracting feature parameters. A calibration procedure was presented for the monitoring system. Validation experiments confirmed the effectiveness of the online measurement system for bead geometry in layered additive manufacturing.

Nonlinear conductivity in silicon nitride

NASA Astrophysics Data System (ADS)

Tuncer, Enis

2017-08-01

To better comprehend electrical silicon-package interaction in high voltage applications requires full characterization of the electrical properties of dielectric materials employed in wafer and package level design. Not only the packaging but wafer level dielectrics, i.e. passivation layers, would experience high electric fields generated by the voltage applied pads. In addition the interface between the passivation layer and a mold compound might develop space charge because of the mismatch in electrical properties of the materials. In this contribution electrical properties of a thin silicon nitride (Si3N4) dielectric is reported as a function of temperature and electric field. The measured values later analyzed using different temperature dependent exponential expressions and found that the Mott variable range hopping conduction model was successful to express the data. A full temperature/electric field dependency of conductivity is generated. It was found that the conduction in Si3N4 could be expressed like a field ionization or Fowler-Nordheim mechanism.

Passivation of Plasmonic Colors on Bulk Silver by Atomic Layer Deposition of Aluminum Oxide.

PubMed

Guay, Jean-Michel; Killaire, Graham; Gordon, Peter G; Barry, Sean T; Berini, Pierre; Weck, Arnaud

2018-05-01

We report the passivation of angle-independent plasmonic colors on bulk silver by atomic layer deposition (ALD) of thin films of aluminum oxide. The colors are rendered by silver nanoparticles produced by laser ablation and redeposition on silver. We then apply a two-step approach to aluminum oxide conformal film formation via ALD. In the first step, a low-density film is deposited at low temperature to preserve and pin the silver nanoparticles. In the second step, a second denser film is deposited at a higher temperature to provide tarnish protection. This approach successfully protects the silver and plasmonic colors against tarnishing, humidity, and temperature, as demonstrated by aggressive exposure trials. The processing time associated with deposition of the conformal passivation layers meets industry requirements, and the approach is compatible with mass manufacturing.

Advanced Passivation Technology and Loss Factor Minimization for High Efficiency Solar Cells.

PubMed

Park, Cheolmin; Balaji, Nagarajan; Jung, Sungwook; Choi, Jaewoo; Ju, Minkyu; Lee, Seunghwan; Kim, Jungmo; Bong, Sungjae; Chung, Sungyoun; Lee, Youn-Jung; Yi, Junsin

2015-10-01

High-efficiency Si solar cells have attracted great attention from researchers, scientists, photovoltaic (PV) industry engineers for the past few decades. With thin wafers, surface passivation becomes necessary to increase the solar cells efficiency by overcoming several induced effects due to associated crystal defects and impurities of c-Si. This paper discusses suitable passivation schemes and optimization techniques to achieve high efficiency at low cost. SiNx film was optimized with higher transmittance and reduced recombination for using as an effective antireflection and passivation layer to attain higher solar cell efficiencies. The higher band gap increased the transmittance with reduced defect states that persisted at 1.68 and 1.80 eV in SiNx films. The thermal stability of SiN (Si-rich)/SiN (N-rich) stacks was also studied. Si-rich SiN with a refractive index of 2.7 was used as a passivation layer and N-rich SiN with a refractive index of 2.1 was used for thermal stability. An implied Voc of 720 mV with a stable lifetime of 1.5 ms was obtained for the stack layer after firing. Si-N and Si-H bonding concentration was analyzed by FTIR for the correlation of thermally stable passivation mechanism. The passivation property of spin coated Al2O3 films was also investigated. An effective surface recombination velocity of 55 cm/s with a high density of negative fixed charges (Qf) on the order of 9 x 10(11) cm(-2) was detected in Al2O3 films.

Photo-induced surface modification to improve the performance of lead sulfide quantum dot solar cell.

PubMed

Tulsani, Srikanth Reddy; Rath, Arup Kumar

2018-07-15

The solution-processed quantum dot (QD) solar cell technology has seen significant advancements in recent past to emerge as a potential contender for the next generation photovoltaic technology. In the development of high performance QD solar cell, the surface ligand chemistry has played the important role in controlling the doping type and doping density of QD solids. For instance, lead sulfide (PbS) QDs which is at the forefront of QD solar cell technology, can be made n-type or p-type respectively by using iodine or thiol as the surfactant. The advancements in surface ligand chemistry enable the formation of p-n homojunction of PbS QDs layers to attain high solar cell performances. It is shown here, however, that poor Fermi level alignment of thiol passivated p-type PbS QD hole transport layer with the n-type PbS QD light absorbing layer has rendered the photovoltaic devices from realizing their full potential. Here we develop a control surface oxidation technique using facile ultraviolet ozone treatment to increase the p-doping density in a controlled fashion for the thiol passivated PbS QD layer. This subtle surface modification tunes the Fermi energy level of the hole transport layer to deeper values to facilitate the carrier extraction and voltage generation in photovoltaic devices. In photovoltaic devices, the ultraviolet ozone treatment resulted in the average gain of 18% in the power conversion efficiency with the highest recorded efficiency of 8.98%. Copyright © 2018 Elsevier Inc. All rights reserved.

HfO2 Gate Dielectric on (NH4)2S Passivated (100) GaAs Grown by Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, P.T.; /Stanford U., Materials Sci. Dept.; Sun, Y.

2007-09-28

The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH{sub 4}){sub 2}S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-by-layer removal of the hafnia film revealed a small amount of As{sub 2}O{sub 3} formed at the interface during the dielectric deposition. Traces of arsenic and sulfur out-diffusion into the hafnia film were observed after a 450 C post-deposition anneal, and may be the origins for the electrically active defects. Transmission electron microscopymore » cross section images showed thicker HfO{sub 2} films for a given precursor exposure on S-treated GaAs versus the non-treated sample. In addition, the valence-band and the conduction-band offsets at the HfO{sub 2}/GaAs interface were deduced to be 3.18 eV and a range of 0.87-0.97 eV, respectively. It appears that HCl+(NH{sub 4})2{sub S} treatments provide a superior chemical passivation for GaAs and initial surface for ALD deposition.« less

Fabrication of three-dimensional polymer quadratic nonlinear grating structures by layer-by-layer direct laser writing technique

NASA Astrophysics Data System (ADS)

Bich Do, Danh; Lin, Jian Hung; Diep Lai, Ngoc; Kan, Hung-Chih; Hsu, Chia Chen

2011-08-01

We demonstrate the fabrication of a three-dimensional (3D) polymer quadratic nonlinear (χ(2)) grating structure. By performing layer-by-layer direct laser writing (DLW) and spin-coating approaches, desired photobleached grating patterns were embedded in the guest--host dispersed-red-1/poly(methylmethacrylate) (DR1/PMMA) active layers of an active-passive alternative multilayer structure through photobleaching of DR1 molecules. Polyvinyl-alcohol and SU8 thin films were deposited between DR1/PMMA layers serving as a passive layer to separate DR1/PMMA active layers. After applying the corona electric field poling to the multilayer structure, nonbleached DR1 molecules in the active layers formed polar distribution, and a 3D χ(2) grating structure was obtained. The χ(2) grating structures at different DR1/PMMA nonlinear layers were mapped by laser scanning second harmonic (SH) microscopy, and no cross talk was observed between SH images obtained from neighboring nonlinear layers. The layer-by-layer DLW technique is favorable to fabricating hierarchical 3D polymer nonlinear structures for optoelectronic applications with flexible structural design.

Fabrication of three-dimensional polymer quadratic nonlinear grating structures by layer-by-layer direct laser writing technique.

PubMed

Do, Danh Bich; Lin, Jian Hung; Lai, Ngoc Diep; Kan, Hung-Chih; Hsu, Chia Chen

2011-08-10

We demonstrate the fabrication of a three-dimensional (3D) polymer quadratic nonlinear (χ(2)) grating structure. By performing layer-by-layer direct laser writing (DLW) and spin-coating approaches, desired photobleached grating patterns were embedded in the guest-host dispersed-red-1/poly(methylmethacrylate) (DR1/PMMA) active layers of an active-passive alternative multilayer structure through photobleaching of DR1 molecules. Polyvinyl-alcohol and SU8 thin films were deposited between DR1/PMMA layers serving as a passive layer to separate DR1/PMMA active layers. After applying the corona electric field poling to the multilayer structure, nonbleached DR1 molecules in the active layers formed polar distribution, and a 3D χ(2) grating structure was obtained. The χ(2) grating structures at different DR1/PMMA nonlinear layers were mapped by laser scanning second harmonic (SH) microscopy, and no cross talk was observed between SH images obtained from neighboring nonlinear layers. The layer-by-layer DLW technique is favorable to fabricating hierarchical 3D polymer nonlinear structures for optoelectronic applications with flexible structural design.

Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide

NASA Astrophysics Data System (ADS)

Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji

2017-12-01

In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al2O3-QDSL) passivation. By exploiting the passivation layer of Al2O3, the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc) of 4.77 mA cm-2 is very close to the experimentally measured 4.75 mA cm-2, which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD’s geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.

Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide.

PubMed

Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji

2017-12-01

In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al 2 O 3 -QDSL) passivation. By exploiting the passivation layer of Al 2 O 3 , the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc ) of 4.77 mA cm -2 is very close to the experimentally measured 4.75 mA cm -2 , which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD's geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.

A comparison between active and passive sensing of soil moisture from vegetated terrains

NASA Technical Reports Server (NTRS)

Fung, A. K.; Eom, H. J.

1985-01-01

A comparison between active and passive sensing of soil moisture over vegetated areas is studied via scattering models. In active sensing three contributing terms to radar backscattering can be identified: (1) the ground surface scatter term; (2) the volume scatter term representing scattering from the vegetation layer; and (3) the surface volume scatter term accounting for scattering from both surface and volume. In emission three sources of contribution can also be identified: (1) surface emission; (2) upward volume emission from the vegetation layer; and (3) downward volume emission scattered upward by the ground surface. As ground moisture increases, terms (1) and (3) increase due to increase in permittivity in the active case. However, in passive sensing, term (1) decreases but term (3) increases for the same reason. This self compensating effect produces a loss in sensitivity to change in ground moisture. Furthermore, emission from vegetation may be larger than that from the ground. Hence, the presence of vegetation layer causes a much greater loss of sensitivity to passive than active sensing of soil moisture.

A comparison between active and passive sensing of soil moisture from vegetated terrains

NASA Technical Reports Server (NTRS)

Fung, A. K.; Eom, H. J.

1984-01-01

A comparison between active and passive sensing of soil moisture over vegetated areas is studied via scattering models. In active sensing three contributing terms to radar backscattering can be identified: (1) the ground surface scatter term; (2) the volume scatter term representing scattering from the vegetation layer; and (3) the surface volume scatter term accounting for scattering from both surface and volume. In emission three sources of contribution can also be identified: (1) surface emission; (2) upward volume emission from the vegetation layer; and (3) downward volume emission scattered upward by the ground surface. As ground moisture increases, terms (1) and (3) increase due to increase in permittivity in the active case. However, in passive sensing, term (1) decreases but term (3) increases for the same reason. This self conpensating effect produces a loss in sensitivity to change in ground moisture. Furthermore, emission from vegetation may be larger than that from the ground. Hence, the presence of vegetation layer causes a much greater loss of sensitivity to passive than active sensing of soil moisture.

On the Existence of Our Metals-Based Civilization: I. Phase Space Analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

D.D. Macdonald

2005-06-22

The stability of the barrier layers of bilayer passive films that form on metal and alloy surfaces, when in contact with oxidizing aqueous environments, is explored within the framework of the Point Defect Model (PDM) using phase-space analysis (PSA), in which the rate of growth of the barrier layer into the metal, (dL{sup +}/dt), and the barrier layer dissolution rate, (dL{sup -}/dt), are plotted simultaneously against the barrier layer thickness. A point of intersection of dL{sup -}/dt with dL{sup +}/dt indicates the existence of a metastable barrier layer with a steady state thickness greater than zero. If dL{sup -}/dt >more » (dL{sup +}/dt){sub L=0}, where the latter quantity is the barrier layer growth rate at zero barrier layer thickness, the barrier layer cannot exist, even as a metastable phase, as the resulting thickness would be negative. Under these conditions, the surface is depassivated and the metal may corrode at a rapid rate. Depassivation may result from a change in the oxidation state of the cation upon dissolution of the barrier layer, such that the dissolution rate becomes highly potential dependent (as in the case of transpassive dissolution of chromium-containing alloys, for example, in which the reaction Cr{sub 2}O{sub 3} + 5H{sub 2}O {yields} 2CrO{sub 4}{sup 2-} + 10H {sup +} + 6e{sup -} results in the destruction of the film), or by the action of some solution-phase species (e.g., H{sup +}, Cl{sup -}) that enhances the dissolution rate to the extent that dL{sup -}/dt > (dL{sup +}/dt){sub L=0}. The boundaries for depassivation may be plotted in potential-pH space to develop Kinetic Stability Diagrams (KSDs) as alternatives to the classical Pourbaix diagrams for describing the conditions under which metals or alloys exist in contact with an aqueous environment. The advantage of KSDs is that they provide kinetic descriptions of the state of a metal or alloy that is in much closer concert with the kinetic phenomenon of passivity and depassivation than are equilibrium thermodynamic diagrams. Thus, KSDs more accurately account for the limits of passivity in highly acidic systems, where acid depassivation occurs, and at high potentials, where transition to the transpassive state may occur in some systems. In any event, phase space analysis of the PDM permits specification of the conditions over which reactive metals will remain passive in contact with aqueous systems and hence of the conditions that must be met for the existence of our metals-based civilization.« less

A new structure for comparing surface passivation materials of GaAs solar cells

NASA Technical Reports Server (NTRS)

Desalvo, Gregory C.; Barnett, Allen M.

1989-01-01

The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

Improving the photoresponse spectra of BaSi2 layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma

NASA Astrophysics Data System (ADS)

Xu, Zhihao; Gotoh, Kazuhiro; Deng, Tianguo; Sato, Takuma; Takabe, Ryota; Toko, Kaoru; Usami, Noritaka; Suemasu, Takashi

2018-05-01

We studied the surface passivation effect of hydrogenated amorphous silicon (a-Si:H) layers on BaSi2 films. a-Si:H was formed by an electron-beam evaporation of Si, and a supply of atomic hydrogen using radio-frequency plasma. Surface passivation effect was first investigated on a conventional n-Si(111) substrate by capping with 20 nm-thick a-Si:H layers, and next on a 0.5 μm-thick BaSi2 film on Si(111) by molecular beam epitaxy. The internal quantum efficiency distinctly increased by 4 times in a wide wavelength range for sample capped in situ with a 3 nm-thick a-Si:H layer compared to those capped with a pure a-Si layer.

Protecting nickel with graphene spin-filtering membranes: A single layer is enough

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, M.-B.; Dlubak, B.; Piquemal-Banci, M.

2015-07-06

We report on the demonstration of ferromagnetic spin injectors for spintronics which are protected against oxidation through passivation by a single layer of graphene. The graphene monolayer is directly grown by catalytic chemical vapor deposition on pre-patterned nickel electrodes. X-ray photoelectron spectroscopy reveals that even with its monoatomic thickness, monolayer graphene still efficiently protects spin sources against oxidation in ambient air. The resulting single layer passivated electrodes are integrated into spin valves and demonstrated to act as spin polarizers. Strikingly, the atom-thick graphene layer is shown to be sufficient to induce a characteristic spin filtering effect evidenced through the signmore » reversal of the measured magnetoresistance.« less

Re-active Passive (RAP) Devices for Control of Noise Transmission through a Panel

NASA Technical Reports Server (NTRS)

Carneal, James P.; Giovanardi, Marco; Fuller, Chris R.; Palumbo, Daniel L.

2008-01-01

Re-Active Passive (RAP) devices have been developed to control low frequency (<1000 Hz) noise transmission through a panel. These devices use a combination of active, re-active, and passive technologies packaged into a single unit to control a broad frequency range utilizing the strength of each technology over its best suited frequency range. The RAP device uses passive constrained layer damping to cover the relatively high frequency range (>200 Hz), reactive distributed vibration absorber) to cover the medium frequency range (75 to 250 Hz), and active control for controlling low frequencies (<200 Hz). The device was applied to control noise transmission through a panel mounted in a transmission loss test facility. Experimental results are presented for the bare panel, and combinations of passive treatment, reactive treatment, and active control. Results indicate that three RAP devices were able to increase the overall broadband (15-1000 Hz) transmission loss by 9.4 dB. These three devices added a total of 285 grams to the panel mass of 6.0 kg, or approximately 5%, not including control electronics.

Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

NASA Astrophysics Data System (ADS)

Thi Thanh Nguyen, Huong; Balaji, Nagarajan; Park, Cheolmin; Triet, Nguyen Minh; Le, Anh Huy Tuan; Lee, Seunghwan; Jeon, Minhan; Oh, Donhyun; Dao, Vinh Ai; Yi, Junsin

2017-02-01

Excellent surface passivation and anti-reflection properties of double-stack layers is a prerequisite for high efficiency of n-type c-Si solar cells. The high positive fixed charge (Q f) density of N-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films plays a poor role in boron emitter passivation. The more the refractive index ( n ) of a-SiNx:H is decreased, the more the positive Q f of a-SiNx:H is increased. Hydrogenated amorphous silicon oxynitride (SiON) films possess the properties of amorphous silicon oxide (a-SiOx) and a-SiNx:H with variable n and less positive Q f compared with a-SiNx:H. In this study, we investigated the passivation and anti-reflection properties of Al2O3/SiON stacks. Initially, a SiON layer was deposited by plasma enhanced chemical vapor deposition with variable n and its chemical composition was analyzed by Fourier transform infrared spectroscopy. Then, the SiON layer was deposited as a capping layer on a 10 nm thick Al2O3 layer, and the electrical and optical properties were analyzed. The SiON capping layer with n = 1.47 and a thickness of 70 nm resulted in an interface trap density of 4.74 = 1010 cm-2 eV-1 and Q f of -2.59 = 1012 cm-2 with a substantial improvement in lifetime of 1.52 ms after industrial firing. The incorporation of an Al2O3/SiON stack on the front side of the n-type solar cells results in an energy conversion efficiency of 18.34% compared to the one with Al2O3/a-SiNx:H showing 17.55% efficiency. The short circuit current density and open circuit voltage increase by up to 0.83 mA cm-2 and 12 mV, respectively, compared to the Al2O3/a-SiNx:H stack on the front side of the n-type solar cells due to the good anti-reflection and front side surface passivation.

RF Transmission Lines on Silicon Substrates

NASA Technical Reports Server (NTRS)

Ponchak, George E.

1999-01-01

A review of RF transmission lines on silicon substrates is presented. Through measurements and calculated results, it is shown that attenuation is dominated by conductor loss if silicon substrates with a resistivity greater than 2500 Ohm-cm are used. Si passivation layers affect the transmission line attenuation; however, measured results demonstrate that passivation layers do not necessarily increase attenuation. If standard, low resistivity Si wafers must be used, alternative transmission lines such as thin film microstrip and Co-Planar Waveguide (CPW) on thick polyimide layers must be used. Measured results presented here show that low loss per unit length is achievable with these transmission lines.

Influence of scale interaction on the transport of a passive scalar in a turbulent boundary layer

NASA Astrophysics Data System (ADS)

Saxton-Fox, Theresa; Dawson, Scott; McKeon, Beverley

2017-11-01

A mildly heated turbulent boundary layer is experimentally studied using particle image velocimetry to measure the velocity field and a Malley probe (Malley et al., 1992; Gordeyev et al., 2014) to measure the passive scalar field. Strong gradients in the passive scalar field are observed to be correlated to the interaction of specific velocity scales, illuminating an effect of scale interaction on the passive scalar field. A resolvent analysis performed on the fluctuating velocity and passive scalar equations of motion is used to identify the most amplified velocity and scalar mode shapes at particular wavenumbers. The superposition of a small number of these modes is shown to reproduce the velocity scale interaction phenomenon observed experimentally, as well as the corresponding strong gradient in the scalar field. This work was made possible through the support of United States Air Force Grants FA9550-16-1-0361 and FA9550-16-1-0232 as well as a National Defense Science and Engineering Graduate (NDSEG) fellowship.

Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate

NASA Astrophysics Data System (ADS)

Bessolov, V. N.; Gushchina, E. V.; Konenkova, E. V.; L'vova, T. V.; Panteleev, V. N.; Shcheglov, M. P.

2018-01-01

We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH4)2S aqueous solution leads to the columnar nucleation of hexagonal AlN crystals of two modifications rotated by 30° relative to each other. Based on the sulfide treatment, a simple method of oxide removal from and preparation of Si(100) substrate surface is developed that can be used for the epitaxial growth of group-III nitride layers.

Investigation of low leakage current radiation detectors on n-type 4H-SiC epitaxial layers

NASA Astrophysics Data System (ADS)

Nguyen, Khai V.; Chaudhuri, Sandeep K.; Mandal, Krishna C.

2014-09-01

The surface leakage current of high-resolution 4H-SiC epitaxial layer Schottky barrier detectors has been improved significantly after surface passivations of 4H-SiC epitaxial layers. Thin (nanometer range) layers of silicon dioxide (SiO2) and silicon nitride (Si3N4) were deposited on 4H-SiC epitaxial layers using plasma enhanced chemical vapor deposition (PECVD) on 20 μm thick n-type 4H-SiC epitaxial layers followed by the fabrication of large area (~12 mm2) Schottky barrier radiation detectors. The fabricated detectors have been characterized through current-voltage (I-V), capacitance-voltage (C-V), and alpha pulse height spectroscopy measurements; the results were compared with that of detectors fabricated without surface passivations. Improved energy resolution of ~ 0.4% for 5486 keV alpha particles was observed after passivation, and it was found that the performance of these detectors were limited by the presence of macroscopic and microscopic crystal defects affecting the charge transport properties adversely. Capacitance mode deep level transient studies (DLTS) revealed the presence of a titanium impurity related shallow level defects (Ec-0.19 eV), and two deep level defects identified as Z1/2 and Ci1 located at Ec-0.62 and ~ Ec-1.40 eV respectively.

Review of status developments of high-efficiency crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Liu, Jingjing; Yao, Yao; Xiao, Shaoqing; Gu, Xiaofeng

2018-03-01

In order to further improve cell efficiency and reduce cost in achieving grid parity, a large number of PV manufacturing companies, universities and research institutes have been devoted to a variety of low-cost and high-efficiency crystalline Si solar cells. In this article, the cell structures, characteristics and efficiency progresses of several types of high-efficiency crystalline Si solar cells that have been in small scale production or are promising in mass production are presented, including passivated emitter rear cell, tunnel oxide passivated contact solar cell, interdigitated back contact cell, heterojunction with intrinsic thin-layer cell, and heterojunction solar cells with interdigitated back contacts. Both the industrialization status and future development trend of high-efficiency crystalline silicon solar cells are also pinpointed.

Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

NASA Astrophysics Data System (ADS)

Chiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.

2017-03-01

The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of 70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

NASA Astrophysics Data System (ADS)

Li, Xue-Fei; Liu, Xiao-Jie; Cao, Yan-Qiang; Li, Ai-Dong; Li, Hui; Wu, Di

2013-01-01

We report the characteristics of HfO2 films deposited on Ge substrates with and without La2O3 passivation at 250 °C by atomic layer deposition (ALD) using La[N(SiMe3)2]3 and Hf[N(CH3)(C2H5)]4 as the precursors. The HfO2 is observed to form defective HfGeOx at its interface during 500 °C postdeposition annealing. The insertion of an ultrathin La2O3 interfacial passivation layer effectively prevents the Ge outdiffusion and improves interfacial and electrical properties. Capacitance equivalent thickness (CET) of 1.35 nm with leakage current density JA of 8.3 × 10-4 A/cm2 at Vg = 1 V is achieved for the HfO2/La2O3 gate stacks on Ge substrates.

Surface electrical properties of stainless steel fibres: An AFM-based study

NASA Astrophysics Data System (ADS)

Yin, Jun; D'Haese, Cécile; Nysten, Bernard

2015-03-01

Atomic force microscopy (AFM) electrical modes were used to study the surface electrical properties of stainless steel fibres. The surface electrical conductivity was studied by current sensing AFM and I-V spectroscopy. Kelvin probe force microscopy was used to measure the surface contact potential. The oxide film, known as passivation layer, covering the fibre surface gives rise to the observation of an apparently semiconducting behaviour. The passivation layer generally exhibits a p-type semiconducting behaviour, which is attributed to the predominant formation of chromium oxide on the surface of the stainless steel fibres. At the nanoscale, different behaviours are observed from points to points, which may be attributed to local variations of the chemical composition and/or thickness of the passivation layer. I-V curves are well fitted with an electron tunnelling model, indicating that electron tunnelling may be the predominant mechanism for electron transport.

Passive and Active Detection of Clouds: Comparisons between MODIS and GLAS Observations

NASA Technical Reports Server (NTRS)

Mahesh, Ashwin; Gray, Mark A.; Palm, Stephen P.; Hart, William D.; Spinhirne, James D.

2003-01-01

The Geoscience Laser Altimeter System (GLAS), launched on board the Ice, Cloud and Land Elevation Satellite in January 2003 provides space-borne laser observations of atmospheric layers. GLAS provides opportunities to validate passive observations of the atmosphere for the first time from space with an active optical instrument. Data from the Moderate Resolution Imaging Spectrometer aboard the Aqua satellite is examined along with GLAS observations of cloud layers. In more than three-quarters of the cases, MODIS scene identification from spectral radiances agrees with GLAS. Disagreement between the two platforms is most significant over snow-covered surfaces in the northern hemisphere. Daytime clouds detected by GLAS are also more easily seen in the MODIS data as well, compared to observations made at night. These comparisons illustrate the capabilities of active remote sensing to validate and assess passive measurements, and also to complement them in studies of atmospheric layers.

Mantle updrafts and mechanisms of oceanic volcanism.

PubMed

Anderson, Don L; Natland, James H

2014-10-14

Convection in an isolated planet is characterized by narrow downwellings and broad updrafts--consequences of Archimedes' principle, the cooling required by the second law of thermodynamics, and the effect of compression on material properties. A mature cooling planet with a conductive low-viscosity core develops a thick insulating surface boundary layer with a thermal maximum, a subadiabatic interior, and a cooling highly conductive but thin boundary layer above the core. Parts of the surface layer sink into the interior, displacing older, colder material, which is entrained by spreading ridges. Magma characteristics of intraplate volcanoes are derived from within the upper boundary layer. Upper mantle features revealed by seismic tomography and that are apparently related to surface volcanoes are intrinsically broad and are not due to unresolved narrow jets. Their morphology, aspect ratio, inferred ascent rate, and temperature show that they are passively responding to downward fluxes, as appropriate for a cooling planet that is losing more heat through its surface than is being provided from its core or from radioactive heating. Response to doward flux is the inverse of the heat-pipe/mantle-plume mode of planetary cooling. Shear-driven melt extraction from the surface boundary layer explains volcanic provinces such as Yellowstone, Hawaii, and Samoa. Passive upwellings from deeper in the upper mantle feed ridges and near-ridge hotspots, and others interact with the sheared and metasomatized surface layer. Normal plate tectonic processes are responsible both for plate boundary and intraplate swells and volcanism.

Mantle updrafts and mechanisms of oceanic volcanism

NASA Astrophysics Data System (ADS)

Anderson, Don L.; Natland, James H.

2014-10-01

Convection in an isolated planet is characterized by narrow downwellings and broad updrafts-consequences of Archimedes' principle, the cooling required by the second law of thermodynamics, and the effect of compression on material properties. A mature cooling planet with a conductive low-viscosity core develops a thick insulating surface boundary layer with a thermal maximum, a subadiabatic interior, and a cooling highly conductive but thin boundary layer above the core. Parts of the surface layer sink into the interior, displacing older, colder material, which is entrained by spreading ridges. Magma characteristics of intraplate volcanoes are derived from within the upper boundary layer. Upper mantle features revealed by seismic tomography and that are apparently related to surface volcanoes are intrinsically broad and are not due to unresolved narrow jets. Their morphology, aspect ratio, inferred ascent rate, and temperature show that they are passively responding to downward fluxes, as appropriate for a cooling planet that is losing more heat through its surface than is being provided from its core or from radioactive heating. Response to doward flux is the inverse of the heat-pipe/mantle-plume mode of planetary cooling. Shear-driven melt extraction from the surface boundary layer explains volcanic provinces such as Yellowstone, Hawaii, and Samoa. Passive upwellings from deeper in the upper mantle feed ridges and near-ridge hotspots, and others interact with the sheared and metasomatized surface layer. Normal plate tectonic processes are responsible both for plate boundary and intraplate swells and volcanism.

Mantle updrafts and mechanisms of oceanic volcanism

PubMed Central

Anderson, Don L.; Natland, James H.

2014-01-01

Convection in an isolated planet is characterized by narrow downwellings and broad updrafts—consequences of Archimedes’ principle, the cooling required by the second law of thermodynamics, and the effect of compression on material properties. A mature cooling planet with a conductive low-viscosity core develops a thick insulating surface boundary layer with a thermal maximum, a subadiabatic interior, and a cooling highly conductive but thin boundary layer above the core. Parts of the surface layer sink into the interior, displacing older, colder material, which is entrained by spreading ridges. Magma characteristics of intraplate volcanoes are derived from within the upper boundary layer. Upper mantle features revealed by seismic tomography and that are apparently related to surface volcanoes are intrinsically broad and are not due to unresolved narrow jets. Their morphology, aspect ratio, inferred ascent rate, and temperature show that they are passively responding to downward fluxes, as appropriate for a cooling planet that is losing more heat through its surface than is being provided from its core or from radioactive heating. Response to doward flux is the inverse of the heat-pipe/mantle-plume mode of planetary cooling. Shear-driven melt extraction from the surface boundary layer explains volcanic provinces such as Yellowstone, Hawaii, and Samoa. Passive upwellings from deeper in the upper mantle feed ridges and near-ridge hotspots, and others interact with the sheared and metasomatized surface layer. Normal plate tectonic processes are responsible both for plate boundary and intraplate swells and volcanism. PMID:25201992

Multilayer graphene as an effective corrosion protection coating for copper

NASA Astrophysics Data System (ADS)

Ravishankar, Vasumathy; Ramaprabhu, S.; Jaiswal, Manu

2018-04-01

Graphene grown by chemical vapor deposition (CVD) has been studied as a protective layer against corrosion of copper. The layer number dependence on the protective nature of graphene has been investigated using techniques such as Tafel analysis and Electroimpedance Spectroscopy. Multiple layers of graphene were achieved by wet transfer above CVD grown graphene. Though this might cause grain boundaries, the sites where corrosion is initiated, to be staggered, wet transfer inherently carries the disadvantage of tearing of graphene, as confirmed by Raman spectroscopy measurements. However, Electroimpedance Spectroscopy (EIS) reflects that graphene protected copper has a layer dependent resistance to corrosion. Decrease in corrosion current (Icorr) for graphene protected copper is presented. There is only small dependence of corrosion current on the layer number, Tafel plots clearly indicate passivation in the presence of graphene, whether it be single layer or multiple layers. Notwithstanding the crystallite size, defect free layers of graphene with staggered grain boundaries combined with passivation could offer good corrosion protection for metals.

Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

PubMed

Gaboriau, Dorian; Boniface, Maxime; Valero, Anthony; Aldakov, Dmitry; Brousse, Thierry; Gentile, Pascal; Sadki, Said

2017-04-19

Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10 6 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.

Focal Plane Array Technology for IR Detectors

DTIC Science & Technology

1996-06-01

samples are determined. Our results on p-(HgCd)Te coated with passivation layers are evident from Figs 3.1 and 3.2. In the first case (native sulphides ...samples are evident from the Table II. We studied influence of (a) atmosphere, (b) ZnS passivation, (c) native sulphides + ZnS passivation. The (HgCd)Te...native sulphides + ZnS, full symbols RH<O, open symbols RH>O. 10 5 6408A3 10- 010o E 102 000 2 days after passivation 10 : 80 days after passivation 0

Passivated niobium cavities

DOEpatents

Myneni, Ganapati Rao [Yorktown, VA; Hjorvarsson, Bjorgvin [Lagga Arby, SE; Ciovati, Gianluigi [Newport News, VA

2006-12-19

A niobium cavity exhibiting high quality factors at high gradients is provided by treating a niobium cavity through a process comprising: 1) removing surface oxides by plasma etching or a similar process; 2) removing hydrogen or other gases absorbed in the bulk niobium by high temperature treatment of the cavity under ultra high vacuum to achieve hydrogen outgassing; and 3) assuring the long term chemical stability of the niobium cavity by applying a passivating layer of a superconducting material having a superconducting transition temperature higher than niobium thereby reducing losses from electron (cooper pair) scattering in the near surface region of the interior of the niobium cavity. According to a preferred embodiment, the passivating layer comprises niobium nitride (NbN) applied by reactive sputtering.

Chemical passivation as a method of improving the electrochemical corrosion resistance of Co-Cr-based dental alloy.

PubMed

Rylska, Dorota; Sokołowski, Grzegorz; Sokołowski, Jerzy; Łukomska-Szymańska, Monika

2017-01-01

The purpose of the study was to evaluate corrosion resistance of Wirobond C® alloy after chemical passivation treatment. The alloy surface undergone chemical passivation treatment in four different media. Corrosion studies were carried out by means of electrochemical methods in saline solution. Corrosion effects were determined using SEM. The greatest increase in the alloy polarization resistance was observed for passive layer produced in Na2SO4 solution with graphite. The same layer caused the highest increase in corrosion current. Generally speaking, the alloy passivation in Na2SO4 solution with graphite caused a substantial improvement of the corrosion resistance. The sample after passivation in Na2SO4 solution without graphite, contrary to others, lost its protective properties along with successive anodic polarization cycles. The alloy passivation in Na3PO4 solution with graphite was the only one that caused a decrease in the alloy corrosion properties. The SEM studies of all samples after chemical passivation revealed no pit corrosion - in contrast to the sample without any modification. Every successive polarization cycle in anodic direction of pure Wirobond C® alloy enhances corrosion resistance shifting corrosion potential in the positive direction and decreasing corrosion current value. The chemical passivation in solutions with low pH values decreases susceptibility to electrochemical corrosion of Co-Cr dental alloy. The best protection against corrosion was obtained after chemical passivation of Wirobond C® in Na2SO4 solution with graphite. Passivation with Na2SO4 in solution of high pH does not cause an increase in corrosion resistance of WIROBOND C. Passivation process increases alloy resistance to pit corrosion.

Surface passivation of Fe{sub 3}O{sub 4} nanoparticles with Al{sub 2}O{sub 3} via atomic layer deposition in a rotating fluidized bed reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Chen-Long; Deng, Zhang; Cao, Kun

2016-07-15

Iron(II,III) oxide (Fe{sub 3}O{sub 4}) nanoparticles have shown great promise in many magnetic-related applications such as magnetic resonance imaging, hyperthermia treatment, and targeted drug delivery. Nevertheless, these nanoparticles are vulnerable to oxidation and magnetization loss under ambient conditions, and passivation is usually required for practical applications. In this work, a home-built rotating fluidized bed (RFB) atomic layer deposition (ALD) reactor was employed to form dense and uniform nanoscale Al{sub 2}O{sub 3} passivation layers on Fe{sub 3}O{sub 4} nanoparticles. The RFB reactor facilitated the precursor diffusion in the particle bed and intensified the dynamic dismantling of soft agglomerates, exposing every surfacemore » reactive site to precursor gases. With the aid of in situ mass spectroscopy, it was found that a thicker fluidization bed formed by larger amount of particles increased the residence time of precursors. The prolonged residence time allowed more thorough interactions between the particle surfaces and the precursor gas, resulting in an improvement of the precursor utilization from 78% to nearly 100%, even under a high precursor feeding rate. Uniform passivation layers around the magnetic cores were demonstrated by both transmission electron microscopy and the statistical analysis of Al mass concentrations. Individual particles were coated instead of the soft agglomerates, as was validated by the specific surface area analysis and particle size distribution. The results of thermogravimetric analysis suggested that 5 nm-thick ultrathin Al{sub 2}O{sub 3} coatings could effectively protect the Fe{sub 3}O{sub 4} nanoparticles from oxidation. The x-ray diffraction patterns also showed that the magnetic core crystallinity of such passivated nanoparticles could be well preserved under accelerated oxidation conditions. The precise thickness control via ALD maintained the saturation magnetization at 66.7 emu/g with a 5 nm-thick Al{sub 2}O{sub 3} passivation layer. This good preservation of the magnetic properties with superior oxidation resistance will be beneficial for practical magnetic-based applications.« less

Humidity Sensing Properties of Paper Substrates and Their Passivation with ZnO Nanoparticles for Sensor Applications

PubMed Central

Niarchos, Georgios; Dubourg, Georges; Afroudakis, Georgios; Georgopoulos, Markos; Tsouti, Vasiliki; Makarona, Eleni; Crnojevic-Bengin, Vesna; Tsamis, Christos

2017-01-01

In this paper, we investigated the effect of humidity on paper substrates and propose a simple and low-cost method for their passivation using ZnO nanoparticles. To this end, we built paper-based microdevices based on an interdigitated electrode (IDE) configuration by means of a mask-less laser patterning method on simple commercial printing papers. Initial resistive measurements indicate that a paper substrate with a porous surface can be used as a cost-effective, sensitive and disposable humidity sensor in the 20% to 70% relative humidity (RH) range. Successive spin-coated layers of ZnO nanoparticles then, control the effect of humidity. Using this approach, the sensors become passive to relative humidity changes, paving the way to the development of ZnO-based gas sensors on paper substrates insensitive to humidity. PMID:28273847

Passive Flap Actuation by Reversing Flow in Laminar Boundary Layer Separation

NASA Astrophysics Data System (ADS)

Parsons, Chase; Lang, Amy; Santos, Leo; Bonacci, Andrew

2017-11-01

Reducing the flow separation is of great interest in the field of fluid mechanics in order to reduce drag and improve the overall efficiency of aircraft. This project seeks to investigate passive flow control using shark inspired microflaps in laminar boundary layer separation. This study aims to show that whether a flow is laminar or turbulent, laminar and 2D or turbulent and 3D, microflaps actuated by reversing flow is a robust means of controlling flow separation. In order to generate a controlled adverse pressure gradient, a rotating cylinder induces separation at a chosen location on a flat plate boundary layer with Re above 10000. Within this thick boundary layer, digital particle image velocimetry is used to map the flow. This research can be used in the future to better understand the nature of the bristling shark scales and its ability to passively control separation. Results show that microflaps successfully actuated due to backflow and that this altered the formation of flow separation. I would like to thank the NSF for REU Grant EEC 1659710 and the Army Research Office for funding this project.

Photoluminescence and capacitance voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

NASA Astrophysics Data System (ADS)

Anantathanasarn, Sanguan; Hasegawa, Hideki

2002-05-01

A novel surface passivation technique for GaAs using an ultrathin GaN interface control layer (GaN ICL) formed by surface nitridation was characterized by ultrahigh vacuum (UHV) photoluminescence (PL) and capacitance-voltage ( C- V) measurements. The PL quantum efficiency was dramatically enhanced after being passivated by the GaN ICL structure, reaching as high as 30 times of the initial clean GaAs surface. Further analysis of PL data was done by the PL surface state spectroscopy (PLS 3) simulation technique. PL and C- V results are in good agreement indicating that ultrathin GaN ICL reduces the gap states and unpins the Fermi level, realizing a wide movement of Fermi level within the midgap region and reduction of the effective surface recombination velocity by a factor of 1/60. GaN layer also introduced a large negative surface fixed charge of about 10 12 cm -2. A further improvement took place by depositing a Si 3N 4 layer on GaN ICL/GaAs structure.

Method for implementation of back-illuminated CMOS or CCD imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2008-01-01

A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, and the silicon wafer is removed to expose the oxide layer.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

DOEpatents

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Surface Passivation by Quantum Exclusion Using Multiple Layers

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor)

2015-01-01

A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1.times.10.sup.14 cm.sup.-2, and locally exceeding 10.sup.22 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition.

PubMed

Lin, Yuan-Yu; Hsu, Che-Chen; Tseng, Ming-Hung; Shyue, Jing-Jong; Tsai, Feng-Yu

2015-10-14

Passivation is a challenging issue for the oxide thin-film transistor (TFT) technologies because it requires prolonged high-temperature annealing treatments to remedy defects produced in the process, which greatly limits its manufacturability as well as its compatibility with temperature-sensitive materials such as flexible plastic substrates. This study investigates the defect-formation mechanisms incurred by atomic layer deposition (ALD) passivation processes on ZnO TFTs, based on which we demonstrate for the first time degradation-free passivation of ZnO TFTs by a TiO2/Al2O3 nanolaminated (TAO) film deposited by a low-temperature (110 °C) ALD process. By combining the TAO passivation film with ALD dielectric and channel layers into an integrated low-temperature ALD process, we successfully fabricate flexible ZnO TFTs on plastics. Thanks to the exceptional gas-barrier property of the TAO film (water vapor transmission rate (WVTR)<10(-6) g m(-2) day(-1)) as well as the defect-free nature of the ALD dielectric and ZnO channel layers, the TFTs exhibit excellent device performance with high stability and flexibility: field-effect mobility>20 cm2 V(-1) s(-1), subthreshold swing<0.4 V decade(-1) after extended bias-stressing (>10,000 s), air-storage (>1200 h), and bending (1.3 cm radius for 1000 times).

Active-Passive Microwave Remote Sensing of Martian Permafrost and Subsurface Water

NASA Technical Reports Server (NTRS)

Raizer, V.; Linkin, V. M.; Ozorovich, Y. R.; Smythe, W. D.; Zoubkov, B.; Babkin, F.

2000-01-01

The investigation of permafrost formation global distribution and their appearance in h less than or equal 1 m thick subsurface layer would be investigated successfully by employment of active-passive microwave remote sensing techniques.

Comparative study of passively Q-switched c-cut Nd:YVO4/Nd:YAG lasers based on CVD graphene and controlled operation

NASA Astrophysics Data System (ADS)

Jia, Fuqiang; Liu, Pei; Li, Kang; Chen, Hao; Cheng, Yongjie; Cai, Zhiping; Copner, Nigel

2017-07-01

In this paper, a comparative study of passively Q-switched c-cut Nd:YVO4 and Nd:YAG lasers using four different layers CVD graphene as saturable absorber are demonstrated experimentally for the first time. Moreover, it is successful to accurately control the frequency of repetition rates of the CVD graphern passively Q-switched lasers by pulsed pump. The impacts of laser materials, layers of CVD graphene and cavity length on output parameters are investigated intensively as well, the result shows that the c-cut Nd:YVO4 is a promising laser media compared with Nd:YAG for passively Q-switched lasers based on CVD graphene, as it has better performances in pulse width, pulse energy and peak power. A useful and cost-effective way to generate stable pulsed lasers by CVD graphene or other novel saturable materials are demonstrated.

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Aoki, T.; Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T.

2014-07-01

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al2O3. This AlN passivation incorporated nitrogen at the Al2O3/GaAs interface, improving the capacitance-voltage (C-V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C-V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (Dit). The Dit was reduced over the entire GaAs band gap. In particular, these devices exhibited Dit around the midgap of less than 4 × 1012 cm-2eV-1, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Luo, B.; Kim, Jihyun; Ren, F.; Gillespie, J. K.; Fitch, R. C.; Sewell, J.; Dettmer, R.; Via, G. D.; Crespo, A.; Jenkins, T. J.; Gila, B. P.; Onstine, A. H.; Allums, K. K.; Abernathy, C. R.; Pearton, S. J.; Dwivedi, R.; Fogarty, T. N.; Wilkins, R.

2003-03-01

Sc2O3-passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10 years in low-earth orbit (5×109 cm-2). Devices with an AlGaN cap layer showed less degradation in dc characteristics than comparable GaN-cap devices, consistent with differences in average band energy. The changes in device performance could be attributed completely to bulk trapping effects, demonstrating that the effectiveness of the Sc2O3 layers in passivating surface states in the drain-source region was undiminished by the proton irradiation. Sc2O3-passivated AlGaN/HEMTs appear to be attractive candidates for space and terrestrial applications where resistance to high fluxes of ionizing radiation is a criteria.

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LED

PubMed Central

Jeong, Hyun; Jeong, Seung Yol; Park, Doo Jae; Jeong, Hyeon Jun; Jeong, Sooyeon; Han, Joong Tark; Jeong, Hee Jin; Yang, Sunhye; Kim, Ho Young; Baeg, Kang-Jun; Park, Sae June; Ahn, Yeong Hwan; Suh, Eun-Kyung; Lee, Geon-Woong; Lee, Young Hee; Jeong, Mun Seok

2015-01-01

GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key step towards high performance UV-LEDs. Here, we report a new method of suppressing spontaneous polarization in p-type region to augment light output of UV-LEDs. This was achieved by simply passivating graphene oxide (GO) on top of the fully fabricated LED. The dipole layer formed by the passivated GO enhanced hole injection rate by suppressing spontaneous polarization in p-type region. The homogeneity of electroluminescence intensity in active layers was improved due to band filling effect. As a consequence, the light output was enhanced by 60% in linear current region. Our simple approach of suppressing spontaneous polarization of p-GaN using GO passivation disrupts the current state of the art technology and will be useful for high-efficiency UV-LED technology. PMID:25586148

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: augmented light output of GaN UV-LED.

PubMed

Jeong, Hyun; Jeong, Seung Yol; Park, Doo Jae; Jeong, Hyeon Jun; Jeong, Sooyeon; Han, Joong Tark; Jeong, Hee Jin; Yang, Sunhye; Kim, Ho Young; Baeg, Kang-Jun; Park, Sae June; Ahn, Yeong Hwan; Suh, Eun-Kyung; Lee, Geon-Woong; Lee, Young Hee; Jeong, Mun Seok

2015-01-14

GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key step towards high performance UV-LEDs. Here, we report a new method of suppressing spontaneous polarization in p-type region to augment light output of UV-LEDs. This was achieved by simply passivating graphene oxide (GO) on top of the fully fabricated LED. The dipole layer formed by the passivated GO enhanced hole injection rate by suppressing spontaneous polarization in p-type region. The homogeneity of electroluminescence intensity in active layers was improved due to band filling effect. As a consequence, the light output was enhanced by 60% in linear current region. Our simple approach of suppressing spontaneous polarization of p-GaN using GO passivation disrupts the current state of the art technology and will be useful for high-efficiency UV-LED technology.

The challenge of screen printed Ag metallization on nano-scale poly-silicon passivated contacts for silicon solar cells

NASA Astrophysics Data System (ADS)

Jiang, Lin; Song, Lixin; Yan, Li; Becht, Gregory; Zhang, Yi; Hoerteis, Matthias

2017-08-01

Passivated contacts can be used to reduce metal-induced recombination for higher energy conversion efficiency for silicon solar cells, and are obtained increasing attentions by PV industries in recent years. The reported thicknesses of passivated contact layers are mostly within tens of nanometer range, and the corresponding metallization methods are realized mainly by plating/evaporation technology. This high cost metallization cannot compete with the screen printing technology, and may affect its market potential comparing with the presently dominant solar cell technology. Very few works have been reported on screen printing metallization on passivated contact solar cells. Hence, there is a rising demand to realize screen printing metallization technology on this topic. In this work, we investigate applying screen printing metallization pastes on poly-silicon passivated contacts. The critical challenge for us is to build low contact resistance that can be competitive to standard technology while restricting the paste penetrations within the thin nano-scale passivated contact layers. The contact resistivity of 1.1mohm-cm2 and the open circuit voltages > 660mV are achieved, and the most appropriate thickness range is estimated to be around 80 150nm.

Improving Defect-Based Quantum Emitters in Silicon Carbide via Inorganic Passivation.

PubMed

Polking, Mark J; Dibos, Alan M; de Leon, Nathalie P; Park, Hongkun

2018-01-01

Defect-based color centers in wide-bandgap crystalline solids are actively being explored for quantum information science, sensing, and imaging. Unfortunately, the luminescent properties of these emitters are frequently degraded by blinking and photobleaching that arise from poorly passivated host crystal surfaces. Here, a new method for stabilizing the photoluminescence and charge state of color centers based on epitaxial growth of an inorganic passivation layer is presented. Specifically, carbon antisite-vacancy pairs (CAV centers) in 4H-SiC, which serve as single-photon emitters at visible wavelengths, are used as a model system to demonstrate the power of this inorganic passivation scheme. Analysis of CAV centers with scanning confocal microscopy indicates a dramatic improvement in photostability and an enhancement in emission after growth of an epitaxial AlN passivation layer. Permanent, spatially selective control of the defect charge state can also be achieved by exploiting the mismatch in spontaneous polarization at the AlN/SiC interface. These results demonstrate that epitaxial inorganic passivation of defect-based quantum emitters provides a new method for enhancing photostability, emission, and charge state stability of these color centers. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

PubMed

Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

2016-12-01

Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

The Effects of Acid Passivation, Tricresyl Phosphate Pre-Soak, and UV/Ozone Treatment on the Tribology of Perfluoropolyether-Lubricated 440C Stainless Steel Couples

NASA Technical Reports Server (NTRS)

Shogrin, Bradley A.; Jones, William R., Jr.; Herrera-Fierro, Pilar

1997-01-01

The boundary-lubrication performance of perfluoropolyether (PFPE) thin films in the presence of passivated 440 C stainless steel is presented. The study utilized a standard ball-on-disc tribometer. Stainless steel surfaces were passivated with one of four techniques: 1) submersion in a chromic acid bath for 30 minutes at 46 C, 2) submersion in a chromic acid bath for 60 minutes at 56 C, 3) submersion in a tricresyl phosphate (TCP) bath for 2 days at 107 C, or 4) UV/Ozone treated for 15 minutes. After passivation, each disc had a 400 A film of PFPE (hexafluoropropene oxide) applied to it reproducibly (+/- 20%) and uniformly (+/- 15%) using a film deposition device. The lifetimes of these films were quantified by measuring the number of sliding wear cycles required to induce an increase in the friction coefficient from an initial value characteristic of the lubricated wear couple to a final, or failure value, characteristic of an unlubricated, unpassivated wear couple. The lubricated lifetime of the 440 C couple was not altered as a result of the various passivation techniques. The resulting surface chemistry of each passivation technique was examined using X-ray Photoelectron Spectroscopy (XPS). It was found that chromic acid passivation altered the Cr to Fe ratio of the surface. TCP passivation resulted in a FePO4 layer on the surface, while UV/Ozone passivation only removed the carbonaceous contamination layer. None of the passivation techniques were found to dramatically increase the oxide film thickness.

Passivation of phosphorus diffused silicon surfaces with Al{sub 2}O{sub 3}: Influence of surface doping concentration and thermal activation treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Richter, Armin, E-mail: armin.richter@ise.fraunhofer.de; Benick, Jan; Kimmerle, Achim

2014-12-28

Thin layers of Al{sub 2}O{sub 3} are well known for the excellent passivation of p-type c-Si surfaces including highly doped p{sup +} emitters, due to a high density of fixed negative charges. Recent results indicate that Al{sub 2}O{sub 3} can also provide a good passivation of certain phosphorus-diffused n{sup +} c-Si surfaces. In this work, we studied the recombination at Al{sub 2}O{sub 3} passivated n{sup +} surfaces theoretically with device simulations and experimentally for Al{sub 2}O{sub 3} deposited with atomic layer deposition. The simulation results indicate that there is a certain surface doping concentration, where the recombination is maximal duemore » to depletion or weak inversion of the charge carriers at the c-Si/Al{sub 2}O{sub 3} interface. This pronounced maximum was also observed experimentally for n{sup +} surfaces passivated either with Al{sub 2}O{sub 3} single layers or stacks of Al{sub 2}O{sub 3} capped by SiN{sub x}, when activated with a low temperature anneal (425 °C). In contrast, for Al{sub 2}O{sub 3}/SiN{sub x} stacks activated with a short high-temperature firing process (800 °C) a significant lower surface recombination was observed for most n{sup +} diffusion profiles without such a pronounced maximum. Based on experimentally determined interface properties and simulation results, we attribute this superior passivation quality after firing to a better chemical surface passivation, quantified by a lower interface defect density, in combination with a lower density of negative fixed charges. These experimental results reveal that Al{sub 2}O{sub 3}/SiN{sub x} stacks can provide not only excellent passivation on p{sup +} surfaces but also on n{sup +} surfaces for a wide range of surface doping concentrations when activated with short high-temperature treatments.« less

Performance enhancement of zero valent iron based systems using depassivators: Optimization and kinetic mechanisms.

PubMed

Ansaf, Karim Vayalunkal Karottu; Ambika, Selvaraj; Nambi, Indumathi Manivannan

2016-10-01

The long-term ability of Zero-Valent Iron (ZVI) in contaminant removal relies on the effectiveness of iron to serve as electron donor, which makes it a versatile remediation material. However, the formation of oxide and hydroxide layers results in passive layer on ZVI surface during contaminant removal hinders its reactivity. The focus of this research was to evaluate the performance of corrosive agents such as acetic acid (HAc), aluminium sulphate (Alum) and potassium chloride (KCl) as depassivators to overcome passivation for sustainability and longevity. Batch experiments using seven combinations of the above chemicals were conducted to optimize the dosage of depassivators based on passive layer removal. The influence of depassivators in catalytic activity of ZVI in removing Cr(6+) was evaluated. The passive layer on ZVI particles was characterized using Scanning Electron Microscopy (SEM) and confirmed by Energy-Dispersive X-ray spectroscopy (EDAX) analysis. The major mechanisms in passive layer removal was found to be H(+) ion embrittlement followed by uniform depassivation when [HAc] was used and pitting corrosion when [Alum] and [KCl]were used. All the seven sets of chemicals enabled depassivation, but considering the criteria of maximum depassivation, catalytic activity and long term reactivity the depassivation treatments were effective in order as [HAc-Alum] > [HAc-Alum-KCl] >[HAc] > [Alum] > [HAc-KCl] > [KCl] > [Alum-KCl]. The kinetic rate of ZVI using [HAc-Alum] and [Alum] was relatively unchanged over the pH range of 4-10, made it suitable for ex-situ remediation. This insignificant influence of initial pH in catalytic activity of ZVI along with the improvement in longevity and sustainability makes it suitable for effective water treatment applications. The present work has successfully demonstrated that chemical depassivation can restore considerable reactivity of ZVI in the existing permeable reactive barriers. Copyright © 2016 Elsevier Ltd. All rights reserved.

Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2012-01-01

An apparatus and associated method are provided. A first silicon layer having at least one of an associated passivation layer and barrier is included. Also included is a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index. Such composite anti-reflection layer is disposed adjacent to the first silicon layer.

Passive safety device and internal short tested method for energy storage cells and systems

DOEpatents

Keyser, Matthew; Darcy, Eric; Long, Dirk; Pesaran, Ahmad

2015-09-22

A passive safety device for an energy storage cell for positioning between two electrically conductive layers of the energy storage cell. The safety device also comprising a separator and a non-conductive layer. A first electrically conductive material is provided on the non-conductive layer. A first opening is formed through the separator between the first electrically conductive material and one of the electrically conductive layers of the energy storage device. A second electrically conductive material is provided adjacent the first electrically conductive material on the non-conductive layer, wherein a space is formed on the non-conductive layer between the first and second electrically conductive materials. A second opening is formed through the non-conductive layer between the second electrically conductive material and another of the electrically conductive layers of the energy storage device. The first and second electrically conductive materials combine and exit at least partially through the first and second openings to connect the two electrically conductive layers of the energy storage device at a predetermined temperature.

Method and structure for passivating semiconductor material

DOEpatents

Pankove, Jacques I.

1981-01-01

A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

Comparison of positive-pressure, passive ultrasonic, and laser-activated irrigations on smear-layer removal from the root canal surface.

PubMed

Sahar-Helft, Sharonit; Sarp, Ayşe Sena Kabaş; Stabholtz, Adam; Gutkin, Vitaly; Redenski, Idan; Steinberg, Doron

2015-03-01

The purpose of this study was to compare the efficacy of three irrigation techniques for smear-layer removal with 17% EDTA. Cleaning and shaping the root canal system during endodontic treatment produces a smear layer and hard tissue debris. Three irrigation techniques were tested for solution infiltration of this layer: positive-pressure irrigation, passive ultrasonic irrigation, and laser-activated irrigation. Sixty extracted teeth were divided into six equal groups; 17% EDTA was used for 60 sec irrigation of five of the groups. The groups were as follows: Group 1, treated only with ProTaper™ F3 Ni-Ti files; Group 2, positive-pressure irrigation, with a syringe; Group 3, passive ultrasonic irrigation, inserted 1 mm short of the working length; Group 4, passive ultrasonic irrigation, inserted in the upper coronal third of the root; Group 5, Er:YAG laser-activated irrigation, inserted 1 mm short of the working length; and Group 6, Er:YAG laser-activated irrigation, inserted in the upper coronal third of the root. Scanning electron microscopy showed that the smear layer is removed most efficiently using laser-activated irrigation at low energy with 17% EDTA, inserted either at the working length or only in the coronal upper third of the root. Amounts of Ca, P, and O were not significantly different on all treated dentin surfaces. Smear-layer removal was most effective when the root canals were irrigated using Er:YAG laser at low energy with 17% EDTA solution. Interestingly, removal of the smear layer along the entire canal was similar when the laser was inserted in the upper coronal third and at 1 mm short of the working length of the root canal. This effect was not observed with the ultrasonic and positive-pressure techniques.

Passivation of Black Phosphorus via Self-Assembled Organic Monolayers by van der Waals Epitaxy.

PubMed

Zhao, Yinghe; Zhou, Qionghua; Li, Qiang; Yao, Xiaojing; Wang, Jinlan

2017-02-01

An effective passivation approach to protect black phosphorus (BP) from degradation based on multi-scale simulations is proposed. The self-assembly of perylene-3,4,9,10-tetracarboxylic dianhydride monolayers via van der Waals epitaxy on BP does not break the original electronic properties of BP. The passivation layer thickness is only 2 nm. This study opens up a new pathway toward fine passivation of BP. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

PubMed

Choi, Yu Jin; Lim, Hajin; Lee, Suhyeong; Suh, Sungin; Kim, Joon Rae; Jung, Hyung-Suk; Park, Sanghyun; Lee, Jong Ho; Kim, Seong Gyeong; Hwang, Cheol Seong; Kim, HyeongJoon

2014-05-28

The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si concentrations, Al2O3 interfacial passivation layers, and SiO2 capping layers, were examined. La-silicate thin films were deposited using alternating injections of the La[N{Si(CH3)3}2]3 precursor with O3 as the La and O precursors, respectively, at a substrate temperature of 310 °C. The Si concentration in the La-silicate films was further controlled by adding ALD cycles of SiO2. For comparison, La2O3 films were also grown using [La((i)PrCp)3] and O3 as the La precursor and oxygen source, respectively, at the identical substrate temperature. The capacitance-voltage (C-V) hysteresis decreased with an increasing Si concentration in the La-silicate films, although the films showed a slight increase in the capacitance equivalent oxide thickness. The adoption of Al2O3 at the interface as a passivation layer resulted in lower C-V hysteresis and a low leakage current density. The C-V hysteresis voltages of the La-silicate films with Al2O3 passivation and SiO2 capping layers was significantly decreased to ∼0.1 V, whereas the single layer La-silicate film showed a hysteresis voltage as large as ∼1.0 V.

Effect of surface pre-treatments on biocompatibility of magnesium.

PubMed

Lorenz, Carla; Brunner, Johannes G; Kollmannsberger, Philip; Jaafar, Leila; Fabry, Ben; Virtanen, Sannakaisa

2009-09-01

This study reports the influence of Mg surface passivation on the survival rate of human HeLa cells and mouse fibroblasts in cell culture experiments. Polished samples of commercially pure Mg show high reactivity in the cell culture medium, leading to a pH shift in the alkaline direction, and therefore cell adhesion and survival is strongly impaired. Passivation of the Mg surface in 1M NaOH can strongly enhance cell survival. The best initial cell adhesion is observed for Mg samples incubated in simulated body fluid (M-SBF), which leads to the formation of a biomimetic, amorphous Ca/Mg-phosphate layer with high surface roughness. This surface layer, however, passivates and seals the Mg surface only partially. Subsequent Mg dissolution leads to a significantly stronger pH increase compared to NaOH-passivated samples, which prevents long-term cell survival. These results demonstrate that surface passivation with NaOH and M-SBF together with the associated changes of surface reactivity, chemistry and roughness provide a viable strategy to facilitate cell survival on otherwise non-biocompatible Mg surfaces.

Comparative study on hydrostatic strain, stress and dislocation density of Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure before and after a-Si{sub 3}N{sub 4} passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dinara, Syed Mukulika, E-mail: smdinara.iit@gmail.com; Jana, Sanjay Kr.; Mukhopadhyay, Partha

2015-08-28

The hydrostatic strain, stress and dislocation densities were comparatively analyzed before and after passivation of amorphous silicon nitride (a-Si{sub 3}N{sub 4}) layer on Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure by nondestructive high resolution x-ray diffraction (HRXRD) technique. The crystalline quality, in-plane and out-of plane strain were evaluated from triple-axis (TA) (ω-2θ) diffraction profile across the (002) reflection plane and double-axis (DA) (ω-2θ) glancing incidence (GI) diffraction profile across (105) reflection plane. The hydrostatic strain and stress of Al{sub 0.3}Ga{sub 0.7}N barrier layer were increased significantly after passivation and both are tensile in nature. The dislocation density of GaN was also analyzed andmore » no significant change was observed after passivation of the heterostructure. The crystalline quality was not degraded after passivation on the heterostructure confirmed by the full-width-half-maximum (FWHM) analysis.« less

Performance of a passive direct ethanol fuel cell

NASA Astrophysics Data System (ADS)

Pereira, J. P.; Falcão, D. S.; Oliveira, V. B.; Pinto, A. M. F. R.

2014-06-01

Ethanol emerges as an attractive fuel since it is less toxic and has higher energy density than methanol and can be produced from biomass. Direct ethanol fuel cells (DEFCs) appear as a good choice for producing sustainable energy for portable applications. However, they are still far from attaining acceptable levels of power output, since their performance is affected by the slow electrochemical ethanol oxidation and water and ethanol crossover. In the present work, an experimental study on the performance of a passive DEFC is described. Tailored MEAs (membrane electrode assembly) with different catalyst loadings, anode diffusion layers and membranes were tested in order to select optimal working conditions at high ethanol concentrations and low ethanol crossover. The performance increased with an increase of membrane and anode diffusion layer thicknesses and anode catalyst loading. A maximum power density of 1.33 mW cm-2, was obtained using a Nafion 117 membrane, 4 mg cm-2 of Pt-Ru and 2 mg cm-2 of Pt on the anode and cathode catalyst layers, ELAT as anode diffusion layer, carbon cloth as cathode diffusion layer and an ethanol concentration of 2 M. As far as the authors are aware this is the first work reporting an experimental optimization of passive DEFCs.

High-Efficiency Silicon/Organic Heterojunction Solar Cells with Improved Junction Quality and Interface Passivation.

PubMed

He, Jian; Gao, Pingqi; Ling, Zhaoheng; Ding, Li; Yang, Zhenhai; Ye, Jichun; Cui, Yi

2016-12-27

Silicon/organic heterojunction solar cells (HSCs) based on conjugated polymers, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and n-type silicon (n-Si) have attracted wide attention due to their potential advantages of high efficiency and low cost. However, the state-of-the-art efficiencies are still far from satisfactory due to the inferior junction quality. Here, facile treatments were applied by pretreating the n-Si wafer in tetramethylammonium hydroxide (TMAH) solution and using a capping copper iodide (CuI) layer on the PEDOT:PSS layer to achieve a high-quality Schottky junction. Detailed photoelectric characteristics indicated that the surface recombination was greatly suppressed after TMAH pretreatment, which increased the thickness of the interfacial oxide layer. Furthermore, the CuI capping layer induced a strong inversion layer near the n-Si surface, resulting in an excellent field effect passivation. With the collaborative improvements in the interface chemical and electrical passivation, a competitive open-circuit voltage of 0.656 V and a high fill factor of 78.1% were achieved, leading to a stable efficiency of over 14.3% for the planar n-Si/PEDOT:PSS HSCs. Our findings suggest promising strategies to further exploit the full voltage as well as efficiency potentials for Si/organic solar cells.

Active control of jet flowfields

NASA Astrophysics Data System (ADS)

Kibens, Valdis; Wlezien, Richard W.

1987-06-01

Passive and active control of jet shear layer development were investigated as mechanisms for modifying the global characteristics of jet flowfields. Slanted and stepped indeterminate origin (I.O.) nozzles were used as passive, geometry-based control devices which modified the flow origins. Active control techniques were also investigated, in which periodic acoustic excitation signals were injected into the I.O. nozzle shear layers. Flow visualization techniques based on a pulsed copper-vapor laser were used in a phase-conditioned image acquisition mode to assemble optically averaged sets of images acquired at known times throughout the repetition cycle of the basic flow oscillation period. Hot wire data were used to verify the effect of the control techniques on the mean and fluctuating flow properties. The flow visualization images were digitally enhanced and processed to show locations of prominent vorticity concentrations. Three-dimensional vortex interaction patterns were assembled in a format suitable for movie mode on a graphic display workstation, showing the evolution of three-dimensional vortex system in time.

Design and fabrication of a hybrid maglev model employing PML and SML

NASA Astrophysics Data System (ADS)

Sun, R. X.; Zheng, J.; Zhan, L. J.; Huang, S. Y.; Li, H. T.; Deng, Z. G.

2017-10-01

A hybrid maglev model combining permanent magnet levitation (PML) and superconducting magnetic levitation (SML) was designed and fabricated to explore a heavy-load levitation system advancing in passive stability and simple structure. In this system, the PML was designed to levitate the load, and the SML was introduced to guarantee the stability. In order to realize different working gaps of the two maglev components, linear bearings were applied to connect the PML layer (for load) and the SML layer (for stability) of the hybrid maglev model. Experimental results indicate that the hybrid maglev model possesses excellent advantages of heavy-load ability and passive stability at the same time. This work presents a possible way to realize a heavy-load passive maglev concept.

Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

NASA Astrophysics Data System (ADS)

Winarski, D. J.; Anwand, W.; Wagner, A.; Saadatkia, P.; Selim, F. A.; Allen, M.; Wenner, B.; Leedy, K.; Allen, J.; Tetlak, S.; Look, D. C.

2016-09-01

Undoped and Ga- and Al- doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution scanning electron microscopy (SEM), optical spectroscopy and Hall-effect measurements. SEM measurements reveal an average grain size of 20 nm and distinct individual layer structure. Measurable conductivity was not detected in the unprocessed films; however, annealing in hydrogen or zinc environment induced significant conductivity (˜10-2 Ω .cm) in most films. Positron annihilation spectroscopy measurements provided strong evidence that the significant enhancement in conductivity was due to hydrogen passivation of Zn vacancy related defects or elimination of Zn vacancies by Zn interstitials which suppress their role as deep acceptors. Hydrogen passivation of cation vacancies is shown to play an important role in tuning the electrical conductivity of ZnO, similar to its role in passivation of defects at the Si/SiO2 interface that has been essential for the successful development of complementary metal-oxide-semiconductor (CMOS) devices. By comparison with hydrogen effect on other oxides, we suggest that hydrogen may play a universal role in oxides passivating cation vacancies and modifying their electronic properties.

Heat-activated Plasmonic Chemical Sensors for Harsh Environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carpenter, Michael; Oh, Sang-Hyun

2015-12-01

A passive plasmonics based chemical sensing system to be used in harsh operating environments was investigated and developed within this program. The initial proposed technology was based on combining technologies developed at the SUNY Polytechnic Institute Colleges of Nanoscale Science and Engineering (CNSE) and at the University of Minnesota (UM). Specifically, a passive wireless technique developed at UM was to utilize a heat-activated plasmonic design to passively harvest the thermal energy from within a combustion emission stream and convert this into a narrowly focused light source. This plasmonic device was based on a bullseye design patterned into a gold filmmore » using focused ion beam methods (FIB). Critical to the design was the use of thermal stabilizing under and overlayers surrounding the gold film. These stabilizing layers were based on both atomic layer deposited films as well as metal laminate layers developed by United Technologies Aerospace Systems (UTAS). While the bullseye design was never able to be thermally stabilized for operating temperatures of 500oC or higher, an alternative energy harvesting design was developed by CNSE within this program. With this new development, plasmonic sensing results are presented where thermal energy is harvested using lithographically patterned Au nanorods, replacing the need for an external incident light source. Gas sensing results using the harvested thermal energy are in good agreement with sensing experiments, which used an external incident light source. Principal Component Analysis (PCA) was used to reduce the wavelength parameter space from 665 variables down to 4 variables with similar levels of demonstrated selectivity. The method was further improved by patterning rods which harvested energy in the near infrared, which led to a factor of 10 decrease in data acquisition times as well as demonstrated selectivity with a reduced wavelength data set. The combination of a plasmonic-based energy harvesting sensing paradigm with PCA analysis and wavelength down selection offers a novel path towards simplification and integration of plasmonic-based sensing methods using selected wavelengths rather than a full spectral analysis. Integration efforts were designed and modeled for thermal and mass transport considerations by UTAS which led to the 3D printing of scaled models that would serve as the housing for the alternative energy harvesting plasmonic chemical sensor design developed by CNSE.« less

Self-assembled Ag nanoparticle network passivated by a nano-sized ZnO layer for transparent and flexible film heaters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seo, Ki-Won; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr; Kim, Min-Yi

2015-12-15

We investigated a self-assembled Ag nanoparticle network electrode passivated by a nano-sized ZnO layer for use in high-performance transparent and flexible film heaters (TFFHs). The low temperature atomic layer deposition of a nano-sized ZnO layer effectively filled the uncovered area of Ag network and improved the current spreading in the self-assembled Ag network without a change in the sheet resistance and optical transmittance as well as mechanical flexibility. The time-temperature profiles and heat distribution analysis demonstrate that the performance of the TFTH with the ZnO/Ag network is superior to that of a TFFH with Ag nanowire electrodes. In addition, themore » TFTHs with ZnO/Ag network exhibited better stability than the TFFH with a bare Ag network due to the effective current spreading through the nano-sized ZnO layer.« less

InP solar cell with window layer

NASA Technical Reports Server (NTRS)

Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

1994-01-01

The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

The pectinate zone is stiff and the arcuate zone determines passive basilar membrane mechanics in the gerbil

NASA Astrophysics Data System (ADS)

Xia, Hongyi; Steele, Charles R.; Puria, Sunil

2018-05-01

The gerbil basilar membrane (BM) differs from other mammalian BMs in that the lower collagen-fiber layer of the pectinate zone (PZ) forms an arch, the upper fiber layer is flat, and ground substance separates the two layers. The role of this arch has been unknown, but can be elucidated by models. In the standard simple beam model (SBM), the upper and lower collagen-fiber layers of the BM are represented as a single layer in both the PZ and the arcuate zone (AZ). In our new arch-beam model (ABM), the upper fiber layer is flat, the lower layer forms an arch in the PZ, and the two layers combine to form the flat portion of the BM in the AZ. This design is incorporated into a 3D finite-element tapered-box model of the cochlea with viscous fluid. We find in the model that the PZ rotates as a rigid body, so its specific properties have little influence, while the AZ thickness and collagen volume fraction primarily determine passive BM mechanics.

Computational Exploration of the Li-Electrode|Electrolyte Interface in the Presence of a Nanometer Thick Solid-Electrolyte Interphase Layer [Computational exploration of the Li-electrode|electrolyte interface complicated by a nanometer thin solid-electrolyte interphase (SEI) layer

DOE PAGES

Li, Yunsong; Leung, Kevin; Qi, Yue

2016-09-30

A nanometer thick passivation layer will spontaneously form on Li-metal in battery applications due to electrolyte reduction reactions. This passivation layer in rechargeable batteries must have “selective” transport properties: blocking electrons from attacking the electrolytes, while allowing Li + ion to pass through so the electrochemical reactions can continue. The classical description of the electrochemical reaction, Li + + e → Li 0, occurring at the Li-metal|electrolyte interface is now complicated by the passivation layer and will reply on the coupling of electronic and ionic degrees of freedom in the layer. We consider the passivation layer, called “solid electrolyte interphasemore » (SEI)”, as “the most important but the least understood in rechargeable Li-ion batteries,” partly due to the lack of understanding of its structure–property relationship. In predictive modeling, starting from the ab initio level, we find that it is an important tool to understand the nanoscale processes and materials properties governing the interfacial charge transfer reaction at the Li-metal|SEI|electrolyte interface. Here, we demonstrate pristine Li-metal surfaces indeed dissolve in organic carbonate electrolytes without the SEI layer. Based on joint modeling and experimental results, we point out that the well-known two-layer structure of SEI also exhibits two different Li + ion transport mechanisms. The SEI has a porous (organic) outer layer permeable to both Li + and anions (dissolved in electrolyte), and a dense (inorganic) inner layer facilitate only Li + transport. This two-layer/two-mechanism diffusion model suggests only the dense inorganic layer is effective at protecting Li-metal in electrolytes. This model suggests a strategy to deconvolute the structure–property relationships of the SEI by analyzing an idealized SEI composed of major components, such as Li 2CO 3, LiF, Li 2O, and their mixtures. After sorting out the Li+ ion diffusion carriers and their diffusion pathways, we design methods to accelerate the Li + ion conductivity by doping and by using heterogonous structure designs. We will predict the electron tunneling barriers and connect them with measurable first cycle irreversible capacity loss. We note that the SEI not only affects Li + and e – transport, but it can also impose a potential drop near the Li-metal|SEI interface. Our challenge is to fully describe the electrochemical reactions at the Li -metal|SEI|electrolyte interface. This will be the subject of ongoing efforts.« less

Computational Exploration of the Li-Electrode|Electrolyte Interface in the Presence of a Nanometer Thick Solid-Electrolyte Interphase Layer [Computational exploration of the Li-electrode|electrolyte interface complicated by a nanometer thin solid-electrolyte interphase (SEI) layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yunsong; Leung, Kevin; Qi, Yue

A nanometer thick passivation layer will spontaneously form on Li-metal in battery applications due to electrolyte reduction reactions. This passivation layer in rechargeable batteries must have “selective” transport properties: blocking electrons from attacking the electrolytes, while allowing Li + ion to pass through so the electrochemical reactions can continue. The classical description of the electrochemical reaction, Li + + e → Li 0, occurring at the Li-metal|electrolyte interface is now complicated by the passivation layer and will reply on the coupling of electronic and ionic degrees of freedom in the layer. We consider the passivation layer, called “solid electrolyte interphasemore » (SEI)”, as “the most important but the least understood in rechargeable Li-ion batteries,” partly due to the lack of understanding of its structure–property relationship. In predictive modeling, starting from the ab initio level, we find that it is an important tool to understand the nanoscale processes and materials properties governing the interfacial charge transfer reaction at the Li-metal|SEI|electrolyte interface. Here, we demonstrate pristine Li-metal surfaces indeed dissolve in organic carbonate electrolytes without the SEI layer. Based on joint modeling and experimental results, we point out that the well-known two-layer structure of SEI also exhibits two different Li + ion transport mechanisms. The SEI has a porous (organic) outer layer permeable to both Li + and anions (dissolved in electrolyte), and a dense (inorganic) inner layer facilitate only Li + transport. This two-layer/two-mechanism diffusion model suggests only the dense inorganic layer is effective at protecting Li-metal in electrolytes. This model suggests a strategy to deconvolute the structure–property relationships of the SEI by analyzing an idealized SEI composed of major components, such as Li 2CO 3, LiF, Li 2O, and their mixtures. After sorting out the Li+ ion diffusion carriers and their diffusion pathways, we design methods to accelerate the Li + ion conductivity by doping and by using heterogonous structure designs. We will predict the electron tunneling barriers and connect them with measurable first cycle irreversible capacity loss. We note that the SEI not only affects Li + and e – transport, but it can also impose a potential drop near the Li-metal|SEI interface. Our challenge is to fully describe the electrochemical reactions at the Li -metal|SEI|electrolyte interface. This will be the subject of ongoing efforts.« less

Process for producing cadmium sulfide on a cadmium telluride surface

DOEpatents

Levi, Dean H.; Nelson, Art J.; Ahrenkiel, Richard K.

1996-01-01

A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.

Passive microwave remote sensing of an anisotropic random-medium layer

NASA Technical Reports Server (NTRS)

Lee, J. K.; Kong, J. A.

1985-01-01

The principle of reciprocity is invoked to calculate the brightness temperatures for passive microwave remote sensing of a two-layer anisotropic random medium. The bistatic scattering coefficients are first computed with the Born approximation and then integrated over the upper hemisphere to be subtracted from unity, in order to obtain the emissivity for the random-medium layer. The theoretical results are illustrated by plotting the emissivities as functions of viewing angles and polarizations. They are used to interpret remote sgnsing data obtained from vegetation canopy where the anisotropic random-medium model applies. Field measurements with corn stalks arranged in various configurations with preferred azimuthal directions are successfully interpreted with this model.

Process for producing cadmium sulfide on a cadmium telluride surface

DOEpatents

Levi, D.H.; Nelson, A.J.; Ahrenkiel, R.K.

1996-07-30

A process is described for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness. 12 figs.

Radiative transfer in multilayered random medium with laminar structure - Green's function approach

NASA Technical Reports Server (NTRS)

Karam, M. A.; Fung, A. K.

1986-01-01

For a multilayered random medium with a laminar structure a Green's function approach is introduced to obtain the emitted intensity due to an arbitrary point source. It is then shown that the approach is applicable to both active and passive remote sensing. In active remote sensing, the computed radar backscattering cross section for the multilayered medium includes the effects of both volume multiple scattering and surface multiple scattering at the layer boundaries. In passive remote sensing, the brightness temperature is obtained for arbitrary temperature profiles in the layers. As an illustration the brightness temperature and reflectivity are calculated for a bounded layer and compared with results in the literature.

Phosphorus oxide gate dielectric for black phosphorus field effect transistors

NASA Astrophysics Data System (ADS)

Dickerson, W.; Tayari, V.; Fakih, I.; Korinek, A.; Caporali, M.; Serrano-Ruiz, M.; Peruzzini, M.; Heun, S.; Botton, G. A.; Szkopek, T.

2018-04-01

The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2 V-1 s-1 in ambient conditions, which we attribute to the low defect density of the bP/POx interface.

Corrosion behavior of Ti-39Nb alloy for dentistry.

PubMed

Fojt, Jaroslav; Joska, Ludek; Malek, Jaroslav; Sefl, Vaclav

2015-11-01

To increase an orthopedic implant's lifetime, researchers are now concerned on the development of new titanium alloys with suitable mechanical properties (low elastic modulus-high fatigue strength), corrosion resistance and good workability. Corrosion resistance of the newly developed titanium alloys should be comparable with that of pure titanium. The effect of medical preparations containing fluoride ions represents a specific problem related to the use of titanium based materials in dentistry. The aim of this study was to determine the corrosion behavior of β titanium alloy Ti-39Nb in physiological saline solution and in physiological solution containing fluoride ions. Corrosion behavior was studied using standard electrochemical techniques and X-ray photoelectron spectroscopy. It was found that corrosion properties of the studied alloy were comparable with the properties of titanium grade 2. The passive layer was based on the oxides of titanium and niobium in several oxidation states. Alloying with niobium, which was the important part of the alloy passive layer, resulted in no significant changes of corrosion behavior. In the presence of fluoride ions, the corrosion resistance was higher than the resistance of titanium. Copyright © 2015 Elsevier B.V. All rights reserved.

Laser-fired contact formation on metallized and passivated silicon wafers under short pulse durations

NASA Astrophysics Data System (ADS)

Raghavan, Ashwin S.

The objective of this work is to develop a comprehensive understanding of the physical processes governing laser-fired contact (LFC) formation under microsecond pulse durations. Primary emphasis is placed on understanding how processing parameters influence contact morphology, passivation layer quality, alloying of Al and Si, and contact resistance. In addition, the research seeks to develop a quantitative method to accurately predict the contact geometry, thermal cycles, heat and mass transfer phenomena, and the influence of contact pitch distance on substrate temperatures in order to improve the physical understanding of the underlying processes. Finally, the work seeks to predict how geometry for LFCs produced with microsecond pulses will influence fabrication and performance factors, such as the rear side contacting scheme, rear surface series resistance and effective rear surface recombination rates. The characterization of LFC cross-sections reveals that the use of microsecond pulse durations results in the formation of three-dimensional hemispherical or half-ellipsoidal contact geometries. The LFC is heavily alloyed with Al and Si and is composed of a two-phase Al-Si microstructure that grows from the Si wafer during resolidification. As a result of forming a large three-dimensional contact geometry, the total contact resistance is governed by the interfacial contact area between the LFC and the wafer rather than the planar contact area at the original Al-Si interface within an opening in the passivation layer. By forming three-dimensional LFCs, the total contact resistance is significantly reduced in comparison to that predicted for planar contacts. In addition, despite the high energy densities associated with microsecond pulse durations, the passivation layer is well preserved outside of the immediate contact region. Therefore, the use of microsecond pulse durations can be used to improve device performance by leading to lower total contact resistances while preserving the passivation layer. A mathematical model was developed to accurately predict LFC geometry over a wide range of processing parameters by accounting for transient changes in Al and Si alloy composition within the LFC. Since LFC geometry plays a critical role in device performance, an accurate method to predict contact geometry is an important tool that can facilitate further process development. Dimensionless analysis was also conducted to evaluate the relative importance of heat and mass transfer mechanisms. It is shown that convection plays a dominant role in the heat and mass transfer within the molten pool. Due to convective mass transfer, the contacts are heavily doped with Al and Si within 10 is after contact formation, which contributes to the entire resolidified region behaving as the electrically active LFC. The validated model is also used to determine safe operating regimes during laser processing to avoid excessively high operating temperatures. By maintaining processing temperatures below a critical temperature threshold, the onset of liquid metal expulsion and loss of alloying elements can be avoided. The process maps provide a framework that can be used to tailor LFC geometry for device fabrication. Finally, using various geometric relationships for the rear side contacting scheme for photovoltaic devices, it is shown that by employing hemispherical contacts, the number of LFCs required on the rear side can be reduced 75% while doubling the pitch distance and increasing the passivation fraction. Reducing the number of backside contacts required can have a noteworthy impact of manufacturing throughput. In addition, the analytical models suggest that device performance can be maintained at levels comparable to those achieved for planar contacts when producing three-dimensional contacts. The materials and electrical characterization results, device simulations, and design considerations presented in this thesis indicate that by forming three-dimensional LFCs, performance levels of Si-based photovoltaic devices can be maintained while greatly enhancing manufacturing efficiency. The research lays a solid foundation for future development of the LFC process with microsecond pulse durations and indicates that device fabrication employing this method is a critical step moving forward.

Evaluation of layered and mixed passive treatment systems for acid mine drainage.

PubMed

Jeen, Sung-Wook; Mattson, Bruce

2016-11-01

Laboratory column tests for passive treatment systems for mine drainage from a waste rock storage area were conducted to evaluate suitable reactive mixture, system configuration, effects of influent water chemistry, and required residence time. Five columns containing straw, chicken manure, mushroom compost, and limestone (LS), in either layered or mixed configurations, were set up to simulate the treatment system. The results showed that all of the five columns removed metals of concern (i.e. Al, Cd, Co, Cu, Fe, Ni, and Zn) with a residence time of 15 h and greater. Reaction mechanisms responsible for the removal of metals may include sulfate reduction and subsequent sulfide precipitation, precipitation of secondary carbonates and hydroxides, co-precipitation, and sorption on organic substrates and secondary precipitates. The results suggest that the mixed systems containing organic materials and LS perform better than the layered systems, sequentially treated by organic and LS layers, due to the enhanced pH adjustment, which is beneficial to bacterial activity and precipitation of secondary minerals. The column tests provide a basis for the design of a field-scale passive treatment system, such as a reducing and alkalinity producing system or a permeable reactive barrier.

Real-time detection of mercury ions in water using a reduced graphene oxide/DNA field-effect transistor with assistance of a passivation layer

DOE PAGES

Chang, Jingbo; Zhou, Guihua; Gao, Xianfeng; ...

2015-08-01

Field-effect transistor (FET) sensors based on reduced graphene oxide (rGO) for detecting chemical species provide a number of distinct advantages, such as ultrasensitivity, label-free, and real-time response. However, without a passivation layer, channel materials directly exposed to an ionic solution could generate multiple signals from ionic conduction through the solution droplet, doping effect, and gating effect. Therefore, a method that provides a passivation layer on the surface of rGO without degrading device performance will significantly improve device sensitivity, in which the conductivity changes solely with the gating effect. In this work, we report rGO FET sensor devices with Hg 2+-dependentmore » DNA as a probe and the use of an Al 2O 3 layer to separate analytes from conducting channel materials. The device shows good electronic stability, excellent lower detection limit (1 nM), and high sensitivity for real-time detection of Hg 2+ in an underwater environment. Our work shows that optimization of an rGO FET structure can provide significant performance enhancement and profound fundamental understanding for the sensor mechanism.« less

Temporal patterning of the potential induced by localized corrosion of iron passivity in acid media. Growth and breakdown of the oxide film described in terms of a point defect model.

PubMed

Sazou, Dimitra; Pavlidou, Maria; Pagitsas, Michael

2009-10-21

This work analyses the nature of temporal patterning of the anodic potential induced by chlorides during polarization of iron under current-controlled conditions in acid solutions. It is shown that potential oscillations emerged as a result of the local chloride attack of a thin oxide layer, which covers the iron surface in its passive state. The mechanism by which both the local oxide breakdown and the subsequent localized active dissolution (pitting) occur is explained by considering a point defect model (PDM) developed to describe the oxide growth and breakdown. According to the PDM, chlorides occupy oxygen vacancies resulting in the inhibition of oxide growth and autocatalytic generation of cation vacancies that destabilize the oxide layer. Simultaneous transformation of the outer surface of the inner oxide layer to non-adherent ferrous chloride or oxo-chloride species leads to a further thinning of the oxide layer and its lifting-on from the iron surface. The process repeats again yielding sustained oscillations of the anodic potential. Analysis of the oscillatory response obtained under current-controlled conditions as a function of either the current or the time allows the suggestion of a set of alternate diagnostic criteria, which might be used to characterize localized corrosion of iron in acid solutions.

Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.

PubMed

Shin, Kwan Yup; Tak, Young Jun; Kim, Won-Gi; Hong, Seonghwan; Kim, Hyun Jae

2017-04-19

In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improved electrical characteristics and stability. The a-IGZO TFTs with NC-PVLs exhibit improvements in field-effect mobility (μ FE ) from 11.72 ± 1.14 to 20.68 ± 1.94 cm 2 /(V s), threshold voltage (V th ) from 1.85 ± 1.19 to 0.56 ± 0.35 V, and on/off current ratio (I on/off ) from (5.31 ± 2.19) × 10 7 to (4.79 ± 1.54) × 10 8 compared to a-IGZO TFTs without PVLs, respectively. The V th shifts of a-IGZO TFTs without PVLs, with poly(methyl methacrylate) (PMMA) PVLs, and with NC-PVLs under positive bias stress (PBS) test for 10,000 s represented 5.08, 3.94, and 2.35 V, respectively. These improvements were induced by nitrogen diffusion from NC-PVLs to a-IGZO TFTs. The lone-pair electrons of diffused nitrogen attract weakly bonded oxygen serving as defect sites in a-IGZO TFTs. Consequently, the electrical characteristics are improved by an increase of carrier concentration in a-IGZO TFTs, and a decrease of defects in the back channel layer. Also, NC-PVLs have an excellent property as a barrier against ambient gases. Therefore, the NC-PVL is a promising passivation layer for next-generation display devices that simultaneously can improve electrical characteristics and stability against ambient gases.

Broadband nonlinear optical response in multi-layer black phosphorus: an emerging infrared and mid-infrared optical material.

PubMed

Lu, S B; Miao, L L; Guo, Z N; Qi, X; Zhao, C J; Zhang, H; Wen, S C; Tang, D Y; Fan, D Y

2015-05-04

Black phosphorous (BP), the most thermodynamically stable allotrope of phosphorus, is a high-mobility layered semiconductor with direct band-gap determined by the number of layers from 0.3 eV (bulk) to 2.0 eV (single layer). Therefore, BP is considered as a natural candidate for broadband optical applications, particularly in the infrared (IR) and mid-IR part of the spectrum. The strong light-matter interaction, narrow direct band-gap, and wide range of tunable optical response make BP as a promising nonlinear optical material, particularly with great potentials for infrared and mid-infrared opto-electronics. Herein, we experimentally verified its broadband and enhanced saturable absorption of multi-layer BP (with a thickness of ~10 nm) by wide-band Z-scan measurement technique, and anticipated that multi-layer BPs could be developed as another new type of two-dimensional saturable absorber with operation bandwidth ranging from the visible (400 nm) towards mid-IR (at least 1930 nm). Our results might suggest that ultra-thin multi-layer BP films could be potentially developed as broadband ultra-fast photonics devices, such as passive Q-switcher, mode-locker, optical switcher etc.

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

PubMed

Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

2013-03-02

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures

PubMed Central

2013-01-01

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C. PMID:23452508

Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation

NASA Astrophysics Data System (ADS)

Defresne, A.; Plantevin, O.; Roca i Cabarrocas, Pere

2016-12-01

Heterojunction solar cells based on crystalline silicon (c-Si) passivated by hydrogenated amorphous silicon (a-Si:H) thin films are one of the most promising architectures for high energy conversion efficiency. Indeed, a-Si:H thin films can passivate both p-type and n-type wafers and can be deposited at low temperature (<200°C) using PECVD. However, such passivation layers, in particular p-type a-Si:H, show a dramatic degradation in passivation quality above 200°C. Yet, annealing at 300 - 400°C the TCO layer and metallic contacts is highly desirable to reduce the contact resistance as well as the TCO optical absorption. In this work, we show that as expected, ion implantation (5 - 30 keV) introduces defects at the c-Si/a-Si:H interface which strongly degrade the effective lifetime, down to a few micro-seconds. However, the passivation quality can be restored and lifetime values can be improved up to 2 ms over the initial value with annealing. We show here that effective lifetimes above 1 ms can be maintained up to 380°C, opening up the possibility for higher process temperatures in silicon heterojunction device fabrication.

A Biopolymer Heparin Sodium Interlayer Anchoring TiO2 and MAPbI3 Enhances Trap Passivation and Device Stability in Perovskite Solar Cells.

PubMed

You, Shuai; Wang, Hui; Bi, Shiqing; Zhou, Jiyu; Qin, Liang; Qiu, Xiaohui; Zhao, Zhiqiang; Xu, Yun; Zhang, Yuan; Shi, Xinghua; Zhou, Huiqiong; Tang, Zhiyong

2018-04-18

Traps in the photoactive layer or interface can critically influence photovoltaic device characteristics and stabilities. Here, traps passivation and retardation on device degradation for methylammonium lead trihalide (MAPbI 3 ) perovskite solar cells enabled by a biopolymer heparin sodium (HS) interfacial layer is investigated. The incorporated HS boosts the power conversion efficiency from 17.2 to 20.1% with suppressed hysteresis and Shockley-Read-Hall recombination, which originates primarily from the passivation of traps near the interface between the perovskites and the TiO 2 cathode. The incorporation of an HS interfacial layer also leads to a considerable retardation of device degradation, by which 85% of the initial performance is maintained after 70 d storage in ambient environment. Aided by density functional theory calculations, it is found that the passivation of MAPbI 3 and TiO 2 surfaces by HS occurs through the interactions of the functional groups (COO - , SO 3 - , or Na + ) in HS with undersaturated Pb and I ions in MAPbI 3 and Ti 4+ in TiO 2 . This work demonstrates a highly viable and facile interface strategy using biomaterials to afford high-performance and stable perovskite solar cells. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Various design approaches to achieve electric field-driven segmented folding actuation of electroactive polymer (EAP) sheets

NASA Astrophysics Data System (ADS)

Ahmed, Saad; Hong, Jonathan; Zhang, Wei; Kopatz, Jessica; Ounaies, Zoubeida; Frecker, Mary

2018-03-01

Electroactive polymer (EAPs) based technologies have shown promise in areas such as artificial muscles, aerospace, medical and soft robotics. In this work, we demonstrate ways to harness on-demand segmented folding actuation from pure bending of relaxor-ferroelectric P(VDF-TrFE-CTFE) based films, using various design approaches, such as `stiffener' and `notch' based approaches. The in-plane actuation of the P(VDF-TrFE-CTFE) is converted into bending actuation using unimorph configurations, where one passive substrate layer is attached to the active polymer. First, we experimentally show that placement of thin metal strips as stiffener in between active EAPs and passive substrates leads to segmented actuation as opposed to pure bending actuation; stiffeners made of different materials, such as nickel, copper and aluminum, are studied which reveals that a higher Young's modulus favors more pronounced segmented actuation. Second, notched samples are prepared by mounting passive substrate patches of various materials on top of the passive layers of the unimorph EAP actuators. Effect of notch materials, size of the notches and position of the notches on the folding actuation are studied. The motion of the human finger inspires a finger-like biomimetic actuator, which is realized by assigning multiple notches on the structure; finite element analysis (FEA) is also performed using COMSOL Multiphysics software for the notched finger actuator. Finally, a versatile soft-gripper is developed using the notched approach to demonstrate the capability of a properly designed EAP actuator to hold objects of various sizes and shapes.

Front surface passivation of silicon solar cells with antireflection coating

NASA Technical Reports Server (NTRS)

Crotty, G.; Daud, T.; Kachare, R.

1987-01-01

It is demonstrated that the deposition and postdeposition sintering of an antireflection (AR) coating in hydrogen acts to passivate silicon solar cells. Cells with and without an SiO2 passivating layer, coated with a TiO(x)/Al2O3 AR coating, showed comparable enhancements in short-wavelength spectral response and in open-circuit voltage Voc after sintering at 400 C for 5 min in a hydrogen ambient. The improvement in Voc of cells without SiO2 is attributed to front-surface passivation by the AR coating during processing.

Enhancing Efficiency of Perovskite Solar Cells via Surface Passivation with Graphene Oxide Interlayer.

PubMed

Li, Hao; Tao, Leiming; Huang, Feihong; Sun, Qiang; Zhao, Xiaojuan; Han, Junbo; Shen, Yan; Wang, Mingkui

2017-11-08

Perovskite solar cells have been demonstrated as promising low-cost and highly efficient next-generation solar cells. Enhancing V OC by minimization the interfacial recombination kinetics can further improve device performance. In this work, we for the first time reported on surface passivation of perovskite layers with chemical modified graphene oxides, which act as efficient interlayer to reduce interfacial recombination and enhance hole extraction as well. Our modeling points out that the passivation effect mainly comes from the interaction between functional group (4-fluorophenyl) and under-coordinated Pb ions. The resulting perovskite solar cells achieved high efficient power conversion efficiency of 18.75% with enhanced high open circuit V OC of 1.11 V. Ultrafast spectroscopy, photovoltage/photocurrent transient decay, and electronic impedance spectroscopy characterizations reveal the effective passivation effect and the energy loss mechanism. This work sheds light on the importance of interfacial engineering on the surface of perovskite layers and provides possible ways to improve device efficiency.

Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

PubMed

Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

2017-05-24

The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

Oxidation characteristics of 440 C CRES in gaseous oxygen (GOX) environments. [Corrosion Resistant Steel

NASA Technical Reports Server (NTRS)

Dennies, Daniel P.; Parsons, Terry D.

1986-01-01

The oxidation characteristics of 440 C corrosion-resistant steel are evaluated. The dependence of oxide color, type, and thickness, material hardness, and microstructure on temperature is examined. The effects of exposure time, passivation layer, and oxygen pressure on the oxide formation are investigated. A direct relationship between temperature and oxide color, formation, and thickness is detected. It is observed that the exposure time does not affect the microstructure or oxide color, type, or thickness; however, the passivation layer does affect oxide color and type.

GaAs photoconductive semiconductor switch

DOEpatents

Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

1998-01-01

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Tari, Alireza; Wong, William S.

2018-02-01

Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

Heterojunction solar cell

DOEpatents

Olson, Jerry M.

1994-01-01

A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

Electrostatic Functionalization and Passivation of Water-Exfoliated Few-Layer Black Phosphorus by Poly Dimethyldiallyl Ammonium Chloride and Its Ultrafast Laser Application.

PubMed

Feng, Qingliang; Liu, Hongyan; Zhu, Meijie; Shang, Jing; Liu, Dan; Cui, Xiaoqi; Shen, Diqin; Kou, Liangzhi; Mao, Dong; Zheng, Jianbang; Li, Chun; Zhang, Jin; Xu, Hua; Zhao, Jianlin

2018-03-21

Few-layer black phosphorus (BP) which exhibits excellent optical and electronic properties, has great potential applications in nanodevices. However, BP inevitably suffers from the rapid degradation in ambient air because of the high reactivity of P atoms with oxygen and water, which greatly hinders its wide applications. Herein, we demonstrate the electrostatic functionalization as an effective way to simultaneously enhance the stability and dispersity of aqueous phase exfoliated few-layer BP. The poly dimethyldiallyl ammonium chloride (PDDA) is selected to spontaneously and uniformly adsorb on the surface of few-layer BP via electrostatic interaction. The positive charge-center of the N atom of PDDA, which passivates the lone-pair electrons of P, plays a critical role in stabilizing the BP. Meanwhile, the PDDA could serve as hydrophilic ligands to improve the dispersity of exfoliated BP in water. The thinner PDDA-BP nanosheets can stabilize in both air and water even after 15 days of exposure. Finally, the uniform PDDA-BP-polymer film was used as a saturable absorber to realize passive mode-locking operations in a fiber laser, delivering a train of ultrafast pulses with the duration of 1.2 ps at 1557.8 nm. This work provides a new way to obtain highly stable few-layer BP, which shows great promise in ultrafast optics application.

Monolithically interconnected silicon-film™ module technology

NASA Astrophysics Data System (ADS)

DelleDonne, E. J.; Ford, D. H.; Hall, R. B.; Ingram, A. E.; Rand, J. A.; Barnett, A. M.

1999-03-01

AstroPower is developing an advanced thin-silicon-based, photovoltaic module product. A low-cost monolithic interconnected device is being integrated into a module that combines the design and process features of advanced light trapped, thin-silicon solar cells. This advanced product incorporates a low-cost substrate, a nominally 50-μm thick grown silicon layer with minority carrier diffusion lengths exceeding the active layer thickness, light trapping due to back-surface reflection, and back-surface passivation. The thin silicon layer enables high solar cell performance and can lead to a module conversion efficiency as high as 19%. These performance design features, combined with low-cost manufacturing using relatively low-cost capital equipment, continuous processing and a low-cost substrate, will lead to high-performance, low-cost photovoltaic panels.

LES-ODT Simulations of Turbulent Reacting Shear Layers

NASA Astrophysics Data System (ADS)

Hoffie, Andreas; Echekki, Tarek

2012-11-01

Large-eddy simulations (LES) combined with the one-dimensional turbulence (ODT) simulations of a spatially developing turbulent reacting shear layer with heat release and high Reynolds numbers were conducted and compared to results from direct numerical simulations (DNS) of the same configuration. The LES-ODT approach is based on LES solutions for momentum on a coarse grid and solutions for momentum and reactive scalars on a fine ODT grid, which is embedded in the LES computational domain. The shear layer is simulated with a single-step, second-order reaction with an Arrhenius reaction rate. The transport equations are solved using a low Mach number approximation. The LES-ODT simulations yield reasonably accurate predictions of turbulence and passive/reactive scalars' statistics compared to DNS results.

Direct numerical simulations of mack-mode damping on porous coated cones

NASA Astrophysics Data System (ADS)

Lüdeke, H.; Wartemann, V.

2013-06-01

The flow field over a 3 degree blunt cone is investigated with respect to a hypersonic stability analysis of the boundary-layer flow at Mach 6 with porous as well as smooth walls by comparing local direct numerical simulations (DNS) and linear stability theory (LST) data. The original boundary-layer profile is generated by a finite volume solver, using shock capturing techniques to generate an axisymmetric flow field. Local boundary-layer profiles are extracted from this flow field and hypersonic Mack-modes are superimposed for cone-walls with and without a porous surface used as a passive transition-reduction device. Special care is taken of curvature effects of the wall on the mode development over smooth and porous walls.

Passive electrically switchable circuit element having improved tunability and method for its manufacture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mickel, Patrick R; James, Conrad D

2014-09-16

A resistive switching device and methods for making the same are disclosed. In the above said device, a resistive switching layer is interposed between opposing electrodes. The resistive switching layer comprises at least two sub-layers of switchable insulative material characterized by different ionic mobilities.

Solar cell with back side contacts

DOEpatents

Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J; Wanlass, Mark Woodbury; Clews, Peggy J

2013-12-24

A III-V solar cell is described herein that includes all back side contacts. Additionally, the positive and negative electrical contacts contact compoud semiconductor layers of the solar cell other than the absorbing layer of the solar cell. That is, the positive and negative electrical contacts contact passivating layers of the solar cell.

A modular microfluidic architecture for integrated biochemical analysis.

PubMed

Shaikh, Kashan A; Ryu, Kee Suk; Goluch, Edgar D; Nam, Jwa-Min; Liu, Juewen; Thaxton, C Shad; Chiesl, Thomas N; Barron, Annelise E; Lu, Yi; Mirkin, Chad A; Liu, Chang

2005-07-12

Microfluidic laboratory-on-a-chip (LOC) systems based on a modular architecture are presented. The architecture is conceptualized on two levels: a single-chip level and a multiple-chip module (MCM) system level. At the individual chip level, a multilayer approach segregates components belonging to two fundamental categories: passive fluidic components (channels and reaction chambers) and active electromechanical control structures (sensors and actuators). This distinction is explicitly made to simplify the development process and minimize cost. Components belonging to these two categories are built separately on different physical layers and can communicate fluidically via cross-layer interconnects. The chip that hosts the electromechanical control structures is called the microfluidic breadboard (FBB). A single LOC module is constructed by attaching a chip comprised of a custom arrangement of fluid routing channels and reactors (passive chip) to the FBB. Many different LOC functions can be achieved by using different passive chips on an FBB with a standard resource configuration. Multiple modules can be interconnected to form a larger LOC system (MCM level). We demonstrated the utility of this architecture by developing systems for two separate biochemical applications: one for detection of protein markers of cancer and another for detection of metal ions. In the first case, free prostate-specific antigen was detected at 500 aM concentration by using a nanoparticle-based bio-bar-code protocol on a parallel MCM system. In the second case, we used a DNAzyme-based biosensor to identify the presence of Pb(2+) (lead) at a sensitivity of 500 nM in <1 nl of solution.

Deposition temperature dependence of material and Si surface passivation properties of O{sub 3}-based atomic layer deposited Al{sub 2}O{sub 3}-based films and stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bordihn, Stefan, E-mail: s.bordihn2@q-cells.com; Mertens, Verena; Müller, Jörg W.

2014-01-15

The material composition and the Si surface passivation of aluminum oxide (Al{sub 2}O{sub 3}) films prepared by atomic layer deposition using Al(CH{sub 3}){sub 3} and O{sub 3} as precursors were investigated for deposition temperatures (T{sub Dep}) between 200 °C and 500 °C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H] = 3 at. % at 200 °C to [H] < 0.5 at. % at 400 °C and 500 °C. The surface passivation performance was investigated after annealing at 300 °C–450 °C and also after firing stepsmore » in the typical temperature range of 800 °C–925 °C. A similar high level of the surface passivation performance, i.e., surface recombination velocity values <10 cm/s, was obtained after annealing and firing. Investigations of Al{sub 2}O{sub 3}/SiN{sub x} stacks complemented the work and revealed similar levels of surface passivation as single-layer Al{sub 2}O{sub 3} films, both for the chemical and field-effect passivation. The fixed charge density in the Al{sub 2}O{sub 3}/SiN{sub x} stacks, reflecting the field-effect passivation, was reduced by one order of magnitude from 3·10{sup 12} cm{sup −2} to 3·10{sup 11} cm{sup −2} when T{sub Dep} was increased from 300 °C to 500 °C. The level of the chemical passivation changed as well, but the total level of the surface passivation was hardly affected by the value of T{sub Dep}. When firing films prepared at of low T{sub Dep}, blistering of the films occurred and this strongly reduced the surface passivation. These results presented in this work demonstrate that a high level of surface passivation can be achieved for Al{sub 2}O{sub 3}-based films and stacks over a wide range of conditions when the combination of deposition temperature and annealing or firing temperature is carefully chosen.« less

Modal Analysis of Embedded Passive Damping Materials in Composite Plates with Different Orientations

NASA Technical Reports Server (NTRS)

Kehoe, Michael; Kolkailah, Faysal A.; Elghandour, Eltahry I.

1998-01-01

This report presents an experimental and numerical investigation of the free vibration of cantilevered composite plates with and without passive damping. A total of seven composite material plates are considered. The lay-up sequences for the two plates without damping are [90/90/0/0], and [90/0/90/0]; the other five plates are the same as the first two with two embedded layers of passive damping material. The passive damping material is embedded at different locations in the plate with orientation [90/0/90/0],. The damping material employed is a 3M material (SJ-2015 ISD 112) with peak damping properties in the ambient temperature range (32 F to 140 F). The composite material used is a carbon fiber (977-2)/epoxy resin (IM7). The effect of the passive damping system employed in this study for the composite plates are discussed. Modal testing is performed on these plates to determine resonant frequencies, amplitude and mode shape information. Numerical results are obtained using COSMOS/M software for the plates without damping. The experimental and numerical results are in very good agreement for different laminated plates without damping layers.

Passive Mode Carbon Nanotube Underwater Acoustic Transducer

DTIC Science & Technology

2016-09-20

Acoustical transducer arrays can reflect a sound signal in reverse to the sender which can be used for echo location devices. [0008] In Jiang...of this layer of the medium determines the amplitude of the resulting sound waves. [0005] Recently, there has been development of underwater...structures. The energy is partially reflected from interfaces between the geologic structure and is detected with geophone or hydrophone sensors

Heterojunction solar cell

DOEpatents

Olson, J.M.

1994-08-30

A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.

Performance evaluation and accuracy of passive capillary samplers (PCAPs) for estimating real-time drainage water fluxes

USDA-ARS?s Scientific Manuscript database

Successful monitoring of pollutant transport through the soil profile requires accurate, reliable, and appropriate instrumentation to measure amount of drainage water or flux within the vadose layer. We evaluated the performance and accuracy of automated passive capillary wick samplers (PCAPs) for ...

Reversing flow causes passive shark scale actuation in a separating turbulent boundary layer

NASA Astrophysics Data System (ADS)

Lang, Amy; Gemmell, Bradford; Motta, Phil; Habegger, Laura; Du Clos, Kevin; Devey, Sean; Stanley, Caleb; Santos, Leo

2017-11-01

Control of flow separation by shortfin mako skin in experiments has been demonstrated, but the mechanism is still poorly understood yet must be to some extent Re independent. The hypothesized mechanisms inherent in the shark skin for controlling flow separation are: (1) the scales, which are capable of being bristled only by reversing flow, inhibit flow reversal events from further development into larger-scale separation and (2) the cavities formed when scales bristle induces mixing of high momentum flow towards the wall thus energizing the flow close to the surface. Two studies were carried out to measure passive scale actuation caused by reversing flow. A small flow channel induced an unsteady, wake flow over the scales prompting reversing flow events and scale actuation. To resolve the flow and scale movements simultaneously we used specialized optics at high magnification (1 mm field of view) at 50,000 fps. In another study, 3D printed models of shark scales, or microflaps (bristling capability up to 50 degrees), were set into a flat plate. Using a tripped, turbulent boundary layer grown over the long flat plate and a localized adverse pressure gradient, a separation bubble was generated within which the microflaps were placed. Passive flow actuation of both shark scales and microflaps by reversing flow was observed. Funding from Army Research Office and NSF REU site Grant.

Characterization of a complex near-surface structure using well logging and passive seismic measurements

NASA Astrophysics Data System (ADS)

Benjumea, Beatriz; Macau, Albert; Gabàs, Anna; Figueras, Sara

2016-04-01

We combine geophysical well logging and passive seismic measurements to characterize the near-surface geology of an area located in Hontomin, Burgos (Spain). This area has some near-surface challenges for a geophysical study. The irregular topography is characterized by limestone outcrops and unconsolidated sediments areas. Additionally, the near-surface geology includes an upper layer of pure limestones overlying marly limestones and marls (Upper Cretaceous). These materials lie on top of Low Cretaceous siliciclastic sediments (sandstones, clays, gravels). In any case, a layer with reduced velocity is expected. The geophysical data sets used in this study include sonic and gamma-ray logs at two boreholes and passive seismic measurements: three arrays and 224 seismic stations for applying the horizontal-to-vertical amplitude spectra ratio method (H/V). Well-logging data define two significant changes in the P-wave-velocity log within the Upper Cretaceous layer and one more at the Upper to Lower Cretaceous contact. This technique has also been used for refining the geological interpretation. The passive seismic measurements provide a map of sediment thickness with a maximum of around 40 m and shear-wave velocity profiles from the array technique. A comparison between seismic velocity coming from well logging and array measurements defines the resolution limits of the passive seismic techniques and helps it to be interpreted. This study shows how these low-cost techniques can provide useful information about near-surface complexity that could be used for designing a geophysical field survey or for seismic processing steps such as statics or imaging.

Spatially Resolved Imaging on Photocarrier Generations and Band Alignments at Perovskite/PbI2 Heterointerfaces of Perovskite Solar Cells by Light-Modulated Scanning Tunneling Microscopy.

PubMed

Shih, Min-Chuan; Li, Shao-Sian; Hsieh, Cheng-Hua; Wang, Ying-Chiao; Yang, Hung-Duen; Chiu, Ya-Ping; Chang, Chia-Seng; Chen, Chun-Wei

2017-02-08

The presence of the PbI 2 passivation layers at perovskite crystal grains has been found to considerably affect the charge carrier transport behaviors and device performance of perovskite solar cells. This work demonstrates the application of a novel light-modulated scanning tunneling microscopy (LM-STM) technique to reveal the interfacial electronic structures at the heterointerfaces between CH 3 NH 3 PbI 3 perovskite crystals and PbI 2 passivation layers of individual perovskite grains under light illumination. Most importantly, this technique enabled the first observation of spatially resolved mapping images of photoinduced interfacial band bending of valence bands and conduction bands and the photogenerated electron and hole carriers at the heterointerfaces of perovskite crystal grains. By systematically exploring the interfacial electronic structures of individual perovskite grains, enhanced charge separation and reduced back recombination were observed when an optimal design of interfacial PbI 2 passivation layers consisting of a thickness less than 20 nm at perovskite crystal grains was applied.

Passive remote sensing of aerosol layer height using near-UV multiangle polarization measurements

NASA Astrophysics Data System (ADS)

Wu, Lianghai; Hasekamp, Otto; van Diedenhoven, Bastiaan; Cairns, Brian; Yorks, John E.; Chowdhary, Jacek

2016-08-01

We demonstrate that multiangle polarization measurements in the near-UV and blue part of the spectrum are very well suited for passive remote sensing of aerosol layer height. For this purpose we use simulated measurements with different setups (different wavelength ranges, with and without polarization, different polarimetric accuracies) as well as airborne measurements from the Research Scanning Polarimeter (RSP) obtained over the continental USA. We find good agreement of the retrieved aerosol layer height from RSP with measurements from the Cloud Physics Lidar showing a mean absolute difference of less than 1 km. Furthermore, we found that the information on aerosol layer height is provided for large part by the multiangle polarization measurements with high accuracy rather than the multiangle intensity measurements. The information on aerosol layer height is significantly decreased when the shortest RSP wavelength (410 nm) is excluded from the retrieval and is virtually absent when 550 nm is used as shortest wavelength.

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

PubMed

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Thick-Filament Strain and Interfilament Spacing in Passive Muscle: Effect of Titin-Based Passive Tension

PubMed Central

Irving, Thomas; Wu, Yiming; Bekyarova, Tanya; Farman, Gerrie P.; Fukuda, Norio; Granzier, Henk

2011-01-01

We studied the effect of titin-based passive tension on sarcomere structure by simultaneously measuring passive tension and low-angle x-ray diffraction patterns on passive fiber bundles from rabbit skinned psoas muscle. We used a stretch-hold-release protocol with measurement of x-ray diffraction patterns at various passive tension levels during the hold phase before and after passive stress relaxation. Measurements were performed in relaxing solution without and with dextran T-500 to compress the lattice toward physiological levels. The myofilament lattice spacing was measured in the A-band (d1,0) and Z-disk (dZ) regions of the sarcomere. The axial spacing of the thick-filament backbone was determined from the sixth myosin meridional reflection (M6) and the equilibrium positions of myosin heads from the fourth myosin layer line peak position and the I1,1/I1,0 intensity ratio. Total passive tension was measured during the x-ray experiments, and a differential extraction technique was used to determine the relations between collagen- and titin-based passive tension and sarcomere length. Within the employed range of sarcomere lengths (∼2.2–3.4 μm), titin accounted for >80% of passive tension. X-ray results indicate that titin compresses both the A-band and Z-disk lattice spacing with viscoelastic behavior when fibers are swollen after skinning, and elastic behavior when the lattice is reduced with dextran. Titin also increases the axial thick-filament spacing, M6, in an elastic manner in both the presence and absence of dextran. No changes were detected in either I1,1/I1,0 or the position of peaks on the fourth myosin layer line during passive stress relaxation. Passive tension and M6 measurements were converted to thick-filament compliance, yielding a value of ∼85 m/N, which is several-fold larger than the thick-filament compliance determined by others during the tetanic tension plateau of activated intact muscle. This difference can be explained by the fact that thick filaments are more compliant at low tension (passive muscle) than at high tension (tetanic tension). The implications of our findings are discussed. PMID:21402032

Direct evidence of void passivation in Cu(InGa)(SSe){sub 2} absorber layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Dongho; Kim, Young-Su; Mo, Chan B.

We have investigated the charge collection condition around voids in copper indium gallium sulfur selenide (CIGSSe) solar cells fabricated by sputter and a sequential process of selenization/sulfurization. In this study, we found direct evidence of void passivation by using the junction electron beam induced current method, transmission electron microscopy, and energy dispersive X-ray spectroscopy. The high sulfur concentration at the void surface plays an important role in the performance enhancement of the device. The recombination around voids is effectively suppressed by field-assisted void passivation. Hence, the generated carriers are easily collected by the electrodes. Therefore, when the S/(S + Se)more » ratio at the void surface is over 8% at room temperature, the device performance degradation caused by the recombination at the voids is negligible at the CIGSSe layer.« less

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

PubMed Central

2012-01-01

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. PMID:22221730

Integration of quantum cascade lasers and passive waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Montoya, Juan, E-mail: juan.montoya@ll.mit.edu; Wang, Christine; Goyal, Anish

2015-07-20

We report on monolithic integration of active quantum cascade laser (QCL) materials with passive waveguides formed by using proton implantation. Proton implantation reduces the electron concentration in the QCL layers by creating deep levels that trap carriers. This strongly reduces the intersubband absorption and the free-carrier absorption in the gain region and surrounding layers, thus significantly reducing optical loss. We have measured loss as low as α = 0.33 cm{sup −1} in λ = 9.6 μm wavelength proton-implanted QCL material. We have also demonstrated lasing in active-passive integrated waveguides. This simple integration technique is anticipated to enable low-cost fabrication in infrared photonic integrated circuits in themore » mid-infrared (λ ∼ 3–16 μm)« less

Probability theory for 3-layer remote sensing radiative transfer model: univariate case.

PubMed

Ben-David, Avishai; Davidson, Charles E

2012-04-23

A probability model for a 3-layer radiative transfer model (foreground layer, cloud layer, background layer, and an external source at the end of line of sight) has been developed. The 3-layer model is fundamentally important as the primary physical model in passive infrared remote sensing. The probability model is described by the Johnson family of distributions that are used as a fit for theoretically computed moments of the radiative transfer model. From the Johnson family we use the SU distribution that can address a wide range of skewness and kurtosis values (in addition to addressing the first two moments, mean and variance). In the limit, SU can also describe lognormal and normal distributions. With the probability model one can evaluate the potential for detecting a target (vapor cloud layer), the probability of observing thermal contrast, and evaluate performance (receiver operating characteristics curves) in clutter-noise limited scenarios. This is (to our knowledge) the first probability model for the 3-layer remote sensing geometry that treats all parameters as random variables and includes higher-order statistics. © 2012 Optical Society of America

Integrated Flexible Electronic Devices Based on Passive Alignment for Physiological Measurement

PubMed Central

Ryu, Jin Hwa; Byun, Sangwon; Baek, In-Bok; Lee, Bong Kuk; Jang, Won Ick; Jang, Eun-Hye; Kim, Ah-Yung; Yu, Han Yung

2017-01-01

This study proposes a simple method of fabricating flexible electronic devices using a metal template for passive alignment between chip components and an interconnect layer, which enabled efficient alignment with high accuracy. An electrocardiogram (ECG) sensor was fabricated using 20 µm thick polyimide (PI) film as a flexible substrate to demonstrate the feasibility of the proposed method. The interconnect layer was fabricated by a two-step photolithography process and evaporation. After applying solder paste, the metal template was placed on top of the interconnect layer. The metal template had rectangular holes at the same position as the chip components on the interconnect layer. Rectangular hole sizes were designed to account for alignment tolerance of the chips. Passive alignment was performed by simply inserting the components in the holes of the template, which resulted in accurate alignment with positional tolerance of less than 10 µm based on the structural design, suggesting that our method can efficiently perform chip mounting with precision. Furthermore, a fabricated flexible ECG sensor was easily attachable to the curved skin surface and able to measure ECG signals from a human subject. These results suggest that the proposed method can be used to fabricate epidermal sensors, which are mounted on the skin to measure various physiological signals. PMID:28420219

Road to Grid Parity through Deployment of Low-Cost 21.5% N-Type Si Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velundur, Vijay

This project seeks to develop and deploy differentiated 21.5% efficient n-type Si solar cells while reaching the SunShot module cost goal of ≤ $0.50/W. This objective hinges on development of enabling low cost technologies that simplify the manufacturing process and reduce overall processing costs. These comprise of (1) Boron emitter formation and passivation; (2) Simplified processing process for emitter and BSF layers; and (3) Advanced metallization for the front and back contacts.

Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxides

DOE PAGES

Young, David L.; Nemeth, William; Grover, Sachit; ...

2014-01-01

We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO 2 and transparent conducting oxide layers. High temperature silicon dioxide is grown on both surfaces of an n-type wafer to a thickness <50 Å, followed by deposition of tin-doped indium oxide (ITO) and a patterned metal contacting layer. As deposited, the thin-film stack has a very high J0, contact, and a non-ohmic, high contact resistance. However, after a forming gas anneal, the passivation quality and the contact resistivity improve significantly. The contacts are characterized by measuring the recombination parameter of the contact (J0, contact)more » and the specific contact resistivity (ρ contact) using a TLM pattern. The best ITO/SiO 2 passivated contact in this study has J 0,contact = 92.5 fA/cm 2 and ρ contact = 11.5 mOhm-cm 2. These values are placed in context with other passivating contacts using an analysis that determines the ultimate efficiency and the optimal area fraction for contacts for a given set of (J0, contact, ρ contact) values. The ITO/SiO 2 contacts are found to have a higher J0, contact, but a similar ρ contact compared to the best reported passivated contacts.« less

Trapped charge densities in Al{sub 2}O{sub 3}-based silicon surface passivation layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jordan, Paul M., E-mail: Paul.Jordan@namlab.com; Simon, Daniel K.; Dirnstorfer, Ingo

2016-06-07

In Al{sub 2}O{sub 3}-based passivation layers, the formation of fixed charges and trap sites can be strongly influenced by small modifications in the stack layout. Fixed and trapped charge densities are characterized with capacitance voltage profiling and trap spectroscopy by charge injection and sensing, respectively. Al{sub 2}O{sub 3} layers are grown by atomic layer deposition with very thin (∼1 nm) SiO{sub 2} or HfO{sub 2} interlayers or interface layers. In SiO{sub 2}/Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} stacks, both fixed charges and trap sites are reduced by at least a factor of 5 compared with the value measured inmore » pure Al{sub 2}O{sub 3}. In Al{sub 2}O{sub 3}/SiO{sub 2}/Al{sub 2}O{sub 3} or Al{sub 2}O{sub 3}/HfO{sub 2}/Al{sub 2}O{sub 3} stacks, very high total charge densities of up to 9 × 10{sup 12} cm{sup −2} are achieved. These charge densities are described as functions of electrical stress voltage, time, and the Al{sub 2}O{sub 3} layer thickness between silicon and the HfO{sub 2} or the SiO{sub 2} interlayer. Despite the strong variation of trap sites, all stacks reach very good effective carrier lifetimes of up to 8 and 20 ms on p- and n-type silicon substrates, respectively. Controlling the trap sites in Al{sub 2}O{sub 3} layers opens the possibility to engineer the field-effect passivation in the solar cells.« less

Active-passive gradient shielding for MRI acoustic noise reduction.

PubMed

Edelstein, William A; Kidane, Tesfaye K; Taracila, Victor; Baig, Tanvir N; Eagan, Timothy P; Cheng, Yu-Chung N; Brown, Robert W; Mallick, John A

2005-05-01

An important source of MRI acoustic noise-magnet cryostat warm-bore vibrations caused by eddy-current-induced forces-can be mitigated by a passive metal shield mounted on the outside of a vibration-isolated, vacuum-enclosed shielded gradient set. Finite-element (FE) calculations for a z-gradient indicate that a 2-mm-thick Cu layer wrapped on the gradient assembly can decrease mechanical power deposition in the warm bore and reduce warm-bore acoustic noise production by about 25 dB. Eliminating the conducting warm bore and other magnet parts as significant acoustic noise sources could lead to the development of truly quiet, fully functioning MRI systems with noise levels below 70 dB. Copyright 2005 Wiley-Liss, Inc.

Passivation of surface states of α-Fe2O3(0001) surface by deposition of Ga2O3 overlayers: A density functional theory study.

PubMed

Ulman, Kanchan; Nguyen, Manh-Thuong; Seriani, Nicola; Gebauer, Ralph

2016-03-07

There is a big debate in the community regarding the role of surface states of hematite in the photoelectrochemical water splitting. Experimental studies on non-catalytic overlayers passivating the hematite surface states claim a favorable reduction in the overpotential for the water splitting reaction. As a first step towards understanding the effect of these overlayers, we have studied the system Ga2O3 overlayers on hematite (0001) surfaces using first principles computations in the PBE+U framework. Our computations suggest that stoichiometric terminations of Ga2O3 overlayers are energetically more favored than the bare surface, at ambient oxygen chemical potentials. Energetics suggest that the overlayers prefer to grow via a layer-plus-island (Stranski-Krastanov) growth mode with a critical layer thickness of 1-2 layers. Thus, a complete wetting of the hematite surface by an overlayer of gallium oxide is thermodynamically favored. We establish that the effect of deposition of the Ga2O3 overlayers on the bare hematite surface is to passivate the surface states for the stoichiometric termination. For the oxygen terminated surface which is the most stable termination under photoelectrochemical conditions, the effect of deposition of the Ga2O3 overlayer is to passivate the hole-trapping surface state.

GaAs photoconductive semiconductor switch

DOEpatents

Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

1998-09-08

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

Point contacts at the copper-indium-gallium-selenide interface—A theoretical outlook

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bercegol, Adrien, E-mail: adrien.bercegol@polytechnique.edu; Chacko, Binoy; Klenk, Reiner

For a long time, it has been assumed that recombination in the space-charge region of copper-indium-gallium-selenide (CIGS) is dominant, at least in high efficiency solar cells with low band gap. The recent developments like potassium fluoride post deposition treatment and point-contact junction may call this into question. In this work, a theoretical outlook is made using three-dimensional simulations to investigate the effect of point-contact openings through a passivation layer on CIGS solar cell performance. A large set of solar cells is modeled under different scenarios for the charged defect levels and density, radius of the openings, interface quality, and conductionmore » band offset. The positive surface charge created by the passivation layer induces band bending and this influences the contact (CdS) properties, making it beneficial for the open circuit voltage and efficiency, and the effect is even more pronounced when coverage area is more than 95%, and also makes a positive impact on the device performance, even in the presence of a spike at CIGS/CdS heterojunction.« less

Very Hard Corrosion-Resistant Roll-Bonded Cr Coating on Mild Steel in Presence of Graphite

NASA Astrophysics Data System (ADS)

Kumar, Pankaj; Khara, S.; Shekhar, S.; Mondal, K.

2017-12-01

The present work discusses the development of very hard Cr and Cr-carbide coating by roll bonding of Cr powder on a mild steel followed by annealing at 800, 1000, 1100 and 1200 °C with and without the presence of graphite powder packing in argon environment. In addition, the effect of a roll skin pass of 5% prior to the application of coating was studied. The presence of graphite allows diffusion of both carbon and Cr in the mild steel substrate, leading to the formation of Cr-carbide on the outer surface, making the surface very hard (VHN 1800). Depending on the annealing temperature and processing condition, diffusion layer thickness of Cr is found to be in the range of 10-250 μm with Cr content of 12.5-15 wt.% across the diffusion layer. Excellent stable passivity of the coated surface is observed in 0.2 N H2SO4, which is comparable to a highly passivating 304 stainless steel, and very low corrosion rate of the coating is observed as compared to the substrate mild steel.

Modern developments in shear flow control with swirl

NASA Technical Reports Server (NTRS)

Farokhi, Saeed; Taghavi, R.

1990-01-01

Passive and active control of swirling turbulent jets is experimentally investigated. Initial swirl distribution is shown to dominate the free jet evolution in the passive mode. Vortex breakdown, a manifestation of high intensity swirl, was achieved at below critical swirl number (S = 0.48) by reducing the vortex core diameter. The response of a swirling turbulent jet to single frequency, plane wave acoustic excitation was shown to depend strongly on the swirl number, excitation Strouhal number, amplitude of the excitation wave, and core turbulence in a low speed cold jet. A 10 percent reduction of the mean centerline velocity at x/D = 9.0 (and a corresponding increase in the shear layer momentum thickness) was achieved by large amplitude internal plane wave acoustic excitation. Helical instability waves of negative azimuthal wave numbers exhibit larger amplification rates than the plane waves in swirling free jets, according to hydrodynamic stability theory. Consequently, an active swirling shear layer control is proposed to include the generation of helical instability waves of arbitrary helicity and the promotion of modal interaction, through multifrequency forcing.

The effect of chloride ions on the corroded surface layer of 00Cr22Ni5Mo3N duplex stainless steel under cavitation.

PubMed

Wan, Tong; Xiao, Ning; Shen, Hanjie; Yong, Xingyue

2016-11-01

The effects of Cl(-) on the corroded surface layer of 00Cr22Ni5Mo3N duplex stainless steel under cavitation in chloride solutions were investigated using nanoindentation in conjunction with XRD and XPS. The results demonstrate that Cl(-) had a strong effect on the nano-mechanical properties of the corroded surface layer under cavitation, and there was a threshold Cl(-) concentration. Furthermore, a close relationship between the nano-mechanical properties and the cavitation corrosion resistance of 00Cr22Ni5Mo3N duplex stainless steel was observed. The degradation of the nano-mechanical properties of the corroded surface layer was accelerated by the synergistic effect between cavitation erosion and corrosion. A key factor was the adsorption of Cl(-), which caused a preferential dissolution of the ferrous oxides in the passive film layer on the corroded surface layer. Cavitation further promoted the preferential dissolution of the ferrous oxides in the passive film layer. Simultaneously, cavitation accelerated the erosion of the ferrite in the corroded surface layer, resulting in the degradation of the nano-mechanical properties of the corroded surface layer on 00Cr22Ni5Mo3N duplex stainless steel under cavitation. Copyright © 2016. Published by Elsevier B.V.

Active flow control of subsonic flow in an adverse pressure gradient using synthetic jets and passive micro flow control devices

NASA Astrophysics Data System (ADS)

Denn, Michael E.

Several recent studies have shown the advantages of active and/or passive flow control devices for boundary layer flow modification. Many current and future proposed air vehicles have very short or offset diffusers in order to save vehicle weight and create more optimal vehicle/engine integration. Such short coupled diffusers generally result in boundary layer separation and loss of pressure recovery which reduces engine performance and in some cases may cause engine stall. Deployment of flow control devices can alleviate this problem to a large extent; however, almost all active flow control devices have some energy penalty associated with their inclusion. One potential low penalty approach for enhancing the diffuser performance is to combine the passive flow control elements such as micro-ramps with active flow control devices such as synthetic jets to achieve higher control authority. The goal of this dissertation is twofold. The first objective is to assess the ability of CFD with URANS turbulence models to accurately capture the effects of the synthetic jets and micro-ramps on boundary layer flow. This is accomplished by performing numerical simulations replicating several experimental test cases conducted at Georgia Institute of Technology under the NASA funded Inlet Flow Control and Prediction Technologies Program, and comparing the simulation results with experimental data. The second objective is to run an expanded CFD matrix of numerical simulations by varying various geometric and other flow control parameters of micro-ramps and synthetic jets to determine how passive and active control devices interact with each other in increasing and/or decreasing the control authority and determine their influence on modification of boundary layer flow. The boundary layer shape factor is used as a figure of merit for determining the boundary layer flow quality/modification and its tendency towards separation. It is found by a large number of numerical experiments and the analysis of simulation data that a flow control device's influence on boundary layer quality is a function of three factors: (1) the strength of the longitudinal vortex emanating from the flow control device or devices, (2) the height of the vortex core above the surface and, when a synthetic jet is present, (3) the momentum added to the boundary layer flow.

A review of the remote sensing of lower tropospheric thermodynamic profiles and its indispensable role for the understanding and the simulation of water and energy cycles: REMOTE SENSING OF THERMODYNAMIC PROFILES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wulfmeyer, Volker; Hardesty, R. Michael; Turner, David D.

A review of remote sensing technology for lower tropospheric thermodynamic (TD) profiling is presented with focus on high accuracy and high temporal-vertical resolution. The contributions of these instruments to the understanding of the Earth system are assessed with respect to radiative transfer, land surface-atmosphere feedback, convection initiation, and data assimilation. We demonstrate that for progress in weather and climate research, TD profilers are essential. These observational systems must resolve gradients of humidity and temperature in the stable or unstable atmospheric surface layer close to the ground, in the mixed layer, in the interfacial layer—usually characterized by an inversion—and the lowermore » troposphere. A thorough analysis of the current observing systems is performed revealing significant gaps that must be addressed to fulfill existing needs. We analyze whether current and future passive and active remote sensing systems can close these gaps. A methodological analysis and demonstration of measurement capabilities with respect to bias and precision is executed both for passive and active remote sensing including passive infrared and microwave spectroscopy, the global navigation satellite system, as well as water vapor and temperature Raman lidar and water vapor differential absorption lidar. Whereas passive remote sensing systems are already mature with respect to operational applications, active remote sensing systems require further engineering to become operational in networks. However, active remote sensing systems provide a smaller bias as well as higher temporal and vertical resolutions. For a suitable mesoscale network design, TD profiler system developments should be intensified and dedicated observing system simulation experiments should be performed.« less

Analysis of passive damping in thick composite structures

NASA Technical Reports Server (NTRS)

Saravanos, D. A.

1993-01-01

Computational mechanics for the prediction of damping and other dynamic characteristics in composite structures of general thicknesses and laminations are presented. Discrete layer damping mechanics that account for the representation of interlaminar shear effects in the material are summarized. Finite element based structural mechanics for the analysis of damping are described, and a specialty finite element is developed. Applications illustrate the quality of the discrete layer damping mechanics in predicting the damped dynamic characteristics of composite structures with thicker sections and/or laminate configurations that induce interlaminar shear. The results also illustrate and quantify the significance of interlaminar shear damping in such composite structures.

Cooling Technology for Large Space Telescopes

NASA Technical Reports Server (NTRS)

DiPirro, Michael; Cleveland, Paul; Durand, Dale; Klavins, Andy; Muheim, Daniella; Paine, Christopher; Petach, Mike; Tenerelli, Domenick; Tolomeo, Jason; Walyus, Keith

2007-01-01

NASA's New Millennium Program funded an effort to develop a system cooling technology, which is applicable to all future infrared, sub-millimeter and millimeter cryogenic space telescopes. In particular, this technology is necessary for the proposed large space telescope Single Aperture Far-Infrared Telescope (SAFIR) mission. This technology will also enhance the performance and lower the risk and cost for other cryogenic missions. The new paradigm for cooling to low temperatures will involve passive cooling using lightweight deployable membranes that serve both as sunshields and V-groove radiators, in combination with active cooling using mechanical coolers operating down to 4 K. The Cooling Technology for Large Space Telescopes (LST) mission planned to develop and demonstrate a multi-layered sunshield, which is actively cooled by a multi-stage mechanical cryocooler, and further the models and analyses critical to scaling to future missions. The outer four layers of the sunshield cool passively by radiation, while the innermost layer is actively cooled to enable the sunshield to decrease the incident solar irradiance by a factor of more than one million. The cryocooler cools the inner layer of the sunshield to 20 K, and provides cooling to 6 K at a telescope mounting plate. The technology readiness level (TRL) of 7 will be achieved by the active cooling technology following the technology validation flight in Low Earth Orbit. In accordance with the New Millennium charter, tests and modeling are tightly integrated to advance the technology and the flight design for "ST-class" missions. Commercial off-the-shelf engineering analysis products are used to develop validated modeling capabilities to allow the techniques and results from LST to apply to a wide variety of future missions. The LST mission plans to "rewrite the book" on cryo-thermal testing and modeling techniques, and validate modeling techniques to scale to future space telescopes such as SAFIR.

Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors

NASA Astrophysics Data System (ADS)

Sheremet, V.; Genç, M.; Gheshlaghi, N.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2018-01-01

Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa etch in addition to conventional Si3N4 dielectric surface passivation leads to decrease in the reverse bias leakage current by a factor of two as well as a decrease in the shunt current under forward bias by an order of magnitude. Mitigation of the leakage currents owing to the two-step passivation leads to significant increase in the radiant intensity of LEDs by more than a factor of two compared to the conventional single step surface passivation. Further, micro-dome patterned surface of Si3N4 passivation layer allow enhanced light extraction from LEDs.

Passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solution

NASA Astrophysics Data System (ADS)

Luo, Hong; Su, Huaizhi; Dong, Chaofang; Li, Xiaogang

2017-04-01

In this paper, the passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solutions at different pH was evaluated by potentiodynamic measurements, electrochemical impedance spectroscopy. The composition of the passive film and surface morphology were investigated by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and scanning electron microscopy, respectively. The results reveal that metastable pitting susceptibility, stable pitting corrosion, and composition of the passive film are influenced by pH value. After long time immersion, a bilayer structure passive film can be formed in this environment. The appearance of molybdates on the outermost surface layer, further enhancing the stability of the passive film. Moreover, the good pitting corrosion resistance of 316L stainless steel in simulated concrete pore solution without carbonated is mainly due to the presence of high Cr/Fe ratio and molybdates ions within the passive film.

Hydrophobic Polystyrene Passivation Layer for Simultaneously Improved Efficiency and Stability in Perovskite Solar Cells.

PubMed

Li, Minghua; Yan, Xiaoqin; Kang, Zhuo; Huan, Yahuan; Li, Yong; Zhang, Ruxiao; Zhang, Yue

2018-06-06

The major restraint for the commercialization of the high-performance hybrid metal halide perovskite solar cells is the long-term stability, especially at the infirm interface between the perovskite film and organic charge-transfer layer. Recently, engineering the interface between the perovskite and spiro-OMeTAD becomes an effective strategy to simultaneously improve the efficiency and stability in the perovskite solar cells. In this work, we demonstrated that introducing an interfacial polystyrene layer between the perovskite film and spiro-OMeTAD layer can effectively improve the perovskite solar cells photovoltaic performance. The inserted polystyrene layer can passivate the interface traps and defects effectively and decrease the nonradiative recombination, leading to enhanced photoluminescence intensity and carrier lifetime, without compromising the carrier extraction and transfer. Under the optimized condition, the perovskite solar cells with the polystyrene layer achieve an enhanced average power efficiency of about 19.61% (20.46% of the best efficiency) from about 17.63% with negligible current density-voltage hysteresis. Moreover, the optimized perovskite solar cells with the hydrophobic polystyrene layer can maintain about 85% initial efficiency after 2 months storage in open air conditions without encapsulation.

Photo-stability and time-resolved photoluminescence study of colloidal CdSe/ZnS quantum dots passivated in Al{sub 2}O{sub 3} using atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Chih-Yi; Mao, Ming-Hua, E-mail: mhmao@ntu.edu.tw; Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan

2016-08-28

We report photo-stability enhancement of colloidal CdSe/ZnS quantum dots (QDs) passivated in Al{sub 2}O{sub 3} thin film using the atomic layer deposition (ALD) technique. 62% of the original peak photoluminescence (PL) intensity remained after ALD. The photo-oxidation and photo-induced fluorescence enhancement effects of both the unpassivated and passivated QDs were studied under various conditions, including different excitation sources, power densities, and environment. The unpassivated QDs showed rapid PL degradation under high excitation due to strong photo-oxidation in air while the PL intensity of Al{sub 2}O{sub 3} passivated QDs was found to remain stable. Furthermore, recombination dynamics of the unpassivated andmore » passivated QDs were investigated by time-resolved measurements. The average lifetime of the unpassivated QDs decreases with laser irradiation time due to photo-oxidation. Photo-oxidation creates surface defects which reduces the QD emission intensity and enhances the non-radiative recombination rate. From the comparison of PL decay profiles of the unpassivated and passivated QDs, photo-oxidation-induced surface defects unexpectedly also reduce the radiative recombination rate. The ALD passivation of Al{sub 2}O{sub 3} protects QDs from photo-oxidation and therefore avoids the reduction of radiative recombination rate. Our experimental results demonstrated that passivation of colloidal QDs by ALD is a promising method to well encapsulate QDs to prevent gas permeation and to enhance photo-stability, including the PL intensity and carrier lifetime in air. This is essential for the applications of colloidal QDs in light-emitting devices.« less

Application of triple collocation in ground-based validation of soil moisture active/passive (SMAP) level 2 data products

USDA-ARS?s Scientific Manuscript database

The validation of the soil moisture retrievals from the recently-launched NASA Soil Moisture Active/Passive (SMAP) satellite is important prior to their full public release. Uncertainty in attempts to characterize footprint-scale surface-layer soil moisture using point-scale ground observations has ...

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aoki, T., E-mail: aokit@sc.sumitomo-chem.co.jp; Fukuhara, N.; Osada, T.

2014-07-21

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap ofmore » less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.« less

Outstanding resistance and passivation behaviour of new Fe-Co metal-metal glassy alloys in alkaline media

PubMed Central

Al-Harbi, Albandaree K.

2018-01-01

The electrochemical behavior of the oxide layers on two metal-metal glassy alloys, Fe78Co9Cr10Mo2Al1 (VX9)and Fe49Co49V2 (VX50) (at.%), were studied using electrochemical techniques including electrochemical frequency modulation (EFM), electrochemical impedance spectroscopy (EIS) and cyclic polarization (CP) measurements. The morphology and composition of the alloy surfaces were investigated using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The corrosion rate and surface roughness of both alloys increased as the concentration of NaOH in aqueous solution was raised. The presence of some protective elements in the composition of the alloys led to the formation of a spontaneous passive layer on the alloy surface. The higher resistance values of both alloys were associated with the magnitude of the dielectric properties of the passive films formed on their surfaces. Both alloys are classified as having outstanding resistance to corrosion, which results from the formation of a passive film that acts as an efficient barrier to corrosion in alkaline solution. PMID:29337992

Outstanding resistance and passivation behaviour of new Fe-Co metal-metal glassy alloys in alkaline media.

PubMed

Emran, Khadijah M; Al-Harbi, Albandaree K

2018-01-01

The electrochemical behavior of the oxide layers on two metal-metal glassy alloys, Fe78Co9Cr10Mo2Al1 (VX9)and Fe49Co49V2 (VX50) (at.%), were studied using electrochemical techniques including electrochemical frequency modulation (EFM), electrochemical impedance spectroscopy (EIS) and cyclic polarization (CP) measurements. The morphology and composition of the alloy surfaces were investigated using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The corrosion rate and surface roughness of both alloys increased as the concentration of NaOH in aqueous solution was raised. The presence of some protective elements in the composition of the alloys led to the formation of a spontaneous passive layer on the alloy surface. The higher resistance values of both alloys were associated with the magnitude of the dielectric properties of the passive films formed on their surfaces. Both alloys are classified as having outstanding resistance to corrosion, which results from the formation of a passive film that acts as an efficient barrier to corrosion in alkaline solution.

n-MoS2/p-Si Solar Cells with Al2O3 Passivation for Enhanced Photogeneration.

PubMed

Rehman, Atteq Ur; Khan, Muhammad Farooq; Shehzad, Muhammad Arslan; Hussain, Sajjad; Bhopal, Muhammad Fahad; Lee, Sang Hee; Eom, Jonghwa; Seo, Yongho; Jung, Jongwan; Lee, Soo Hong

2016-11-02

Molybdenum disulfide (MoS 2 ) has recently emerged as a promising candidate for fabricating ultrathin-film photovoltaic devices. These devices exhibit excellent photovoltaic performance, superior flexibility, and low production cost. Layered MoS 2 deposited on p-Si establishes a built-in electric field at MoS 2 /Si interface that helps in photogenerated carrier separation for photovoltaic operation. We propose an Al 2 O 3 -based passivation at the MoS 2 surface to improve the photovoltaic performance of bulklike MoS 2 /Si solar cells. Interestingly, it was observed that Al 2 O 3 passivation enhances the built-in field by reduction of interface trap density at surface. Our device exhibits an improved power conversion efficiency (PCE) of 5.6%, which to our knowledge is the highest efficiency among all bulklike MoS 2 -based photovoltaic cells. The demonstrated results hold the promise for integration of bulklike MoS 2 films with Si-based electronics to develop highly efficient photovoltaic cells.

Passively mode-locked fiber laser based on a hollow-core photonic crystal fiber filled with few-layered graphene oxide solution.

PubMed

Liu, Zhi-Bo; He, Xiaoying; Wang, D N

2011-08-15

We demonstrate a nanosecond-pulse erbium-doped fiber laser that is passively mode locked by a hollow-core photonic crystal fiber filled with few-layered graphene oxide solution. Owing to the good solution processing capability of few-layered graphene oxide, which can be filled into the core of a hollow-core photonic crystal fiber through a selective hole filling process, a graphene saturable absorber can be successfully fabricated. The output pulses obtained have a center wavelength, pulse width, and repetition rate of 1561.2 nm, 4.85 ns, and 7.68 MHz, respectively. This method provides a simple and efficient approach to integrate the graphene into the optical fiber system. © 2011 Optical Society of America

A parameterization of the passive layer of a quasigeostrophic flow in a continuously-stratified ocean

NASA Astrophysics Data System (ADS)

Benilov, E. S.

2018-05-01

This paper examines quasigeostrophic flows in an ocean that can be subdivided into an upper active layer (AL) and a lower passive layer (PL), with the flow and density stratification mainly confined to the former. Under this assumption, an asymptotic model is derived parameterizing the effect of the PL on the AL. The model depends only on the PL's depth, whereas its Väisälä-Brunt frequency turns out to be unimportant (as long as it is small). Under an additional assumption-that the potential vorticity field in the PL is well-diffused and, thus, uniform-the derived model reduces to a simple boundary condition. This condition is to be applied at the AL/PL interface, after which the PL can be excluded from consideration.

Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

NASA Astrophysics Data System (ADS)

Driad, R.; Sah, R. E.; Schmidt, R.; Kirste, L.

2012-01-01

We present structural, stress, and electrical properties of plasma assisted e-beam evaporated hafnium dioxide (HfO2) layers on n-type InP substrates. These layers have subsequently been used for surface passivation of InGaAs/InP heterostructure bipolar transistors either alone or in combination with plasma enhanced chemical vapor deposited SiO2 layers. The use of stacked HfO2/SiO2 results in better interface quality with InGaAs/InP heterostructures, as illustrated by smaller leakage current and improved breakdown voltage. These improvements can be attributed to the reduced defect density and charge trapping at the dielectric-semiconductor interface. The deposition at room temperature makes these films suitable for sensitive devices.

Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer.

PubMed

Edmonds, Mary; Kent, Tyler; Chagarov, Evgueni; Sardashti, Kasra; Droopad, Ravi; Chang, Mei; Kachian, Jessica; Park, Jun Hong; Kummel, Andrew

2015-07-08

A saturated Si-Hx seed layer for gate oxide or contact conductor ALD has been deposited via two separate self-limiting and saturating CVD processes on InGaAs(001)-(2 × 4) at substrate temperatures of 250 and 350 °C. For the first self-limiting process, a single silicon precursor, Si3H8, was dosed at a substrate temperature of 250 °C, and XPS results show the deposited silicon hydride layer saturated at about 4 monolayers of silicon coverage with hydrogen termination. STS results show the surface Fermi level remains unpinned following the deposition of the saturated silicon hydride layer, indicating the InGaAs surface dangling bonds are electrically passivated by Si-Hx. For the second self-limiting process, Si2Cl6 was dosed at a substrate temperature of 350 °C, and XPS results show the deposited silicon chloride layer saturated at about 2.5 monolayers of silicon coverage with chlorine termination. Atomic hydrogen produced by a thermal gas cracker was subsequently dosed at 350 °C to remove the Si-Cl termination by replacing with Si-H termination as confirmed by XPS, and STS results confirm the saturated Si-Hx bilayer leaves the InGaAs(001)-(2 × 4) surface Fermi level unpinned. Density function theory modeling of silicon hydride surface passivation shows an Si-Hx monolayer can remove all the dangling bonds and leave a charge balanced surface on InGaAs.

Coupled electromechanical response of composite beams with embedded piezoelectric sensors and actuators

NASA Technical Reports Server (NTRS)

Saravanos, D. A.; Heyliger, P. R.

1994-01-01

Unified mechanics are developed with the capability to model both sensory and active composite laminates with embedded piezoelectric layers. A discrete-layer formulation enables analysis of both global and local electromechanical response. The mechanics include the contributions from elastic, piezoelectric, and dielectric components. The incorporation of electric potential into the state variables permits representation of general electromechanical boundary conditions. Approximate finite element solutions for the static and free-vibration analysis of beams are presented. Applications on composite beams demonstrate the capability to represent either sensory or active structures and to model the complicated stress-strain fields, the interactions between passive/active layers, interfacial phenomena between sensors and composite plies, and critical damage modes in the material. The capability to predict the dynamic characteristics under various electrical boundary conditions is also demonstrated.

Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

NASA Technical Reports Server (NTRS)

Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

1994-01-01

Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

NASA Astrophysics Data System (ADS)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ~13 cm2 V-1 s-1 and small threshold voltage which varied from ~0-3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs.

Photoinduced Field-Effect Passivation from Negative Carrier Accumulation for High-Efficiency Silicon/Organic Heterojunction Solar Cells.

PubMed

Liu, Zhaolang; Yang, Zhenhai; Wu, Sudong; Zhu, Juye; Guo, Wei; Sheng, Jiang; Ye, Jichun; Cui, Yi

2017-12-26

Carrier recombination and light management of the dopant-free silicon/organic heterojunction solar cells (HSCs) based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) are the critical factors in developing high-efficiency photovoltaic devices. However, the traditional passivation technologies can hardly provide efficient surface passivation on the front surface of Si. In this study, a photoinduced electric field was induced in a bilayer antireflective coating (ARC) of polydimethylsiloxane (PDMS) and titanium oxide (TiO 2 ) films, due to formation of an accumulation layer of negative carriers (O 2 - species) under UV (sunlight) illumination. This photoinduced field not only suppressed the silicon surface recombination but also enhanced the built-in potential of HSCs with 84 mV increment. In addition, this photoactive ARC also displayed the outstanding light-trapping capability. The front PEDOT:PSS/Si HSC with the saturated O 2 - received a champion PCE of 15.51% under AM 1.5 simulated sunlight illumination. It was clearly demonstrated that the photoinduced electric field was a simple, efficient, and low-cost method for the surface passivation and contributed to achieve a high efficiency when applied in the Si/PEDOT:PSS HSCs.

Constitutive modeling of the passive inflation-extension behavior of the swine colon.

PubMed

Patel, Bhavesh; Chen, Huan; Ahuja, Aashish; Krieger, Joshua F; Noblet, Jillian; Chambers, Sean; Kassab, Ghassan S

2018-01-01

In the present work, we propose the first structural constitutive model of the passive mechanical behavior of the swine colon that is validated against physiological inflation-extension tests, and accounts for residual strains. Sections from the spiral colon and the descending colon were considered to investigate potential regional variability. We found that the proposed constitutive model accurately captures the passive inflation-extension behavior of both regions of the swine colon (coefficient of determination R 2 =0.94±0.02). The model revealed that the circumferential muscle layer does not provide significant mechanical support under passive conditions and the circumferential load is actually carried by the submucosa layer. The stress analysis permitted by the model showed that the colon tissue can distend up to 30% radially without significant increase in the wall stresses suggesting a highly compliant behavior of the tissue. This is in-line with the requirement for the tissue to easily accommodate variable quantities of fecal matter. The analysis also showed that the descending colon is significantly more compliant than the spiral colon, which is relevant to the storage function of the descending colon. Histological analysis showed that the swine colon possesses a four-layer structure similar to the human colon, where the longitudinal muscle layer is organized into bands called taeniae, a typical feature of the human colon. The model and the estimated parameters can be used in a Finite Element framework to conduct simulations with realistic geometry of the swine colon. The resulting computational model will provide a foundation for virtual assessment of safe and effective devices for the treatment of colonic diseases. Copyright © 2017 Elsevier Ltd. All rights reserved.

Landfill gas distribution at the base of passive methane oxidation biosystems: Transient state analysis of several configurations.

PubMed

Ahoughalandari, Bahar; Cabral, Alexandre R

2017-11-01

The design process of passive methane oxidation biosystems needs to include design criteria that account for the effect of unsaturated hydraulic behavior on landfill gas migration, in particular, restrictions to landfill gas flow due to the capillary barrier effect, which can greatly affect methane oxidation rates. This paper reports the results of numerical simulations performed to assess the landfill gas flow behavior of several passive methane oxidation biosystems. The concepts of these biosystems were inspired by selected configurations found in the technical literature. We adopted the length of unrestricted gas migration (LUGM) as the main design criterion in this assessment. LUGM is defined as the length along the interface between the methane oxidation and gas distribution layers, where the pores of the methane oxidation layer material can be considered blocked for all practical purposes. High values of LUGM indicate that landfill gas can flow easily across this interface. Low values of LUGM indicate greater chances of having preferential upward flow and, consequently, finding hotspots on the surface. Deficient designs may result in the occurrence of hotspots. One of the designs evaluated included an alternative to a concept recently proposed where the interface between the methane oxidation and gas distribution layers was jagged (in the form of a see-saw). The idea behind this ingenious concept is to prevent blockage of air-filled pores in the upper areas of the jagged segments. The results of the simulations revealed the extent of the capability of the different scenarios to provide unrestricted and conveniently distributed upward landfill gas flow. They also stress the importance of incorporating an appropriate design criterion in the selection of the methane oxidation layer materials and the geometrical form of passive biosystems. Copyright © 2017 Elsevier Ltd. All rights reserved.

Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

NASA Astrophysics Data System (ADS)

Nag, Manoj; Bhoolokam, Ajay; Steudel, Soeren; Chasin, Adrian; Myny, Kris; Maas, Joris; Groeseneken, Guido; Heremans, Paul

2014-11-01

We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of back-channel-etch (BCE) configuration based amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation.

Cubic zirconia as a species permeable coating for zinc diffusion in gallium arsenide

NASA Astrophysics Data System (ADS)

Bisberg, J. E.; Dabkowski, F. P.; Chin, A. K.

1988-10-01

Diffusion of zinc into GaAs through an yttria-stabilized cubic zirconia (YSZ) passivation layer has been demonstrated with an open-tube diffusion method. Pure zinc or GaAs/Zn2As3 sources produced high quality planar p-n junctions. The YSZ layer protects the GaAs surface from excessive loss of arsenic, yet is permeable to zinc, allowing its diffusion into the semiconductor. The YSZ films, deposited by electron beam evaporation, were typically 2000 Å thick. Zinc diffusion coefficients (DT) at 650 °C in the YSZ passivated GaAs ranged from 3.6×10-10 cm2/min for the GaAs/Zn2As3 source to 1.9×10-9 cm2/min for the pure zinc source. Doping concentrations for both YSZ passivated and uncapped samples were approximately 5×1019 cm-3.

Integrated resonant micro-optical gyroscope and method of fabrication

DOEpatents

Vawter, G Allen [Albuquerque, NM; Zubrzycki, Walter J [Sandia Park, NM; Guo, Junpeng [Albuquerque, NM; Sullivan, Charles T [Albuquerque, NM

2006-09-12

An integrated optic gyroscope is disclosed which is based on a photonic integrated circuit (PIC) having a bidirectional laser source, a pair of optical waveguide phase modulators and a pair of waveguide photodetectors. The PIC can be connected to a passive ring resonator formed either as a coil of optical fiber or as a coiled optical waveguide. The lasing output from each end of the bidirectional laser source is phase modulated and directed around the passive ring resonator in two counterpropagating directions, with a portion of the lasing output then being detected to determine a rotation rate for the integrated optical gyroscope. The coiled optical waveguide can be formed on a silicon, glass or quartz substrate with a silicon nitride core and a silica cladding, while the PIC includes a plurality of III V compound semiconductor layers including one or more quantum well layers which are disordered in the phase modulators and to form passive optical waveguides.

Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2

NASA Astrophysics Data System (ADS)

Lu, Weifang; Ou, Yiyu; Jokubavicius, Valdas; Fadil, Ahmed; Syväjärvi, Mikael; Petersen, Paul Michael; Ou, Haiyan

2016-07-01

Nano-textured surfaces have played a key role in optoelectronic materials to enhance the light extraction efficiency. In this work, morphology and optical properties of nano-textured SiC covered with atomic layer deposited (ALD) TiO2 were investigated. In order to obtain a high quality surface for TiO2 deposition, a three-step cleaning procedure was introduced after RIE etching. The morphology of anatase TiO2 indicates that the nano-textured substrate has a much higher surface nucleated grain density than a flat substrate at the beginning of the deposition process. The corresponding reflectance increases with TiO2 thickness due to increased surface diffuse reflection. The passivation effect of ALD TiO2 thin film on the nano-textured fluorescent 6H-SiC sample was also investigated and a PL intensity improvement of 8.05% was obtained due to the surface passivation.

Application of Mobility Spectrum Analysis to Modern Multi-layered IR Device Material

NASA Astrophysics Data System (ADS)

Brown, Alexander Earl

Modern detector materials used for infrared (IR) imaging purposes contain complex multi-layered architectures, making more robust characterization techniques necessary. In order to determine mutli-carrier transport properties in the presence of mixed conduction, variable-field Hall characterization can be performed and then analyzed using mobility spectrum analysis to extract parameters of interest. Transport parameters are expected to aid in modeling and simulation of materials and can be used in optimization of particular problem areas. The performances of infrared devices ultimately depend on transport mechanisms, so an accurate determination becomes paramount. This work focuses on the characterization of two materials at the forefront of IR detectors; incumbent, tried and true, HgCdTe technologies and emergent III-V based superlattice structures holding much promise for future detector purposes. Ex-situ doped long-wave planar devices and in-situ doped mid-wave dual-layer heterojunctions (P+/n architecture) HgCdTe structures are explored with regards to substrate choice, namely lattice-matched CdZnTe and lattice-mismatched Si or GaAs. A detailed study of scattering mechanisms reveal that growth on lattice-mismatched substrates leads to dislocation scattering limited mobility at low temperature, correlating with extrinsically limited minority carrier lifetime and excesses diode tunneling current, resulting in overall lower performance. Mobility spectrum analysis proves to be an effective diagnostic on performance as well as providing insight in surface, substrate-interface, and minority carrier transport. Two main issues limiting performance of III-V based superlattices are addressed; high residual doping backgrounds and surface passivation. Mobility spectrum analysis proves to be a reliable method of determining background doping levels. Modest improvements are obtained via post-growth thermal annealing, but results suggest future efforts should be placed upon growth improvements. Passivation efforts using charged electret dielectric show promise but further refinements would be needed. Thiol passivation is identified as a successful passivant of Be-doped p-type InAs/GaSb long-wave absorbers using mobility spectrum analysis, correlating with fabricated device dark current. Mobility spectrum analysis demonstrates it will be indispensable in future development of III-V material.

Strong Effect of Azodye Layer Thickness on RM-Stabilized Photoalignment

DTIC Science & Technology

2017-05-21

to thicker layers (~40 nm). Author Keywords photoalignment; azodye; reactive mesogen 1. Introduction Photoalignment of liquid crystals by azodye...Polymerizable azodyes[3] as well as passivation of the azodye film by spin-coating with a layer of reactive mesogen[4] are currently proposed solutions...thick alignment film rather than a ~40 nm thick alignment film ; cells with thin alignment layers are stable to exposure to polarized light for at

A hydrophilic-hydrophobic dual-layer microporous layer enabling the improved water management of direct methanol fuel cells operating with neat methanol

NASA Astrophysics Data System (ADS)

Yan, X. H.; Zhao, T. S.; Zhao, G.; An, L.; Zhou, X. L.

2015-10-01

Passive direct methanol fuel cells (DMFCs) operating with neat methanol can achieve the maximum system energy density. However, the anodic methanol oxidation reaction requires reactant water, which is completely supplied by water generated at the cathode, causing the system to experience a critical issue known as water starvation. A solution to this problem involves increasing the water recovery flux to meet the rate of water consumption of the anodic reaction, and increase the local water concentration as high as possible at the anode catalyst layer (CL) to improve the anodic kinetics. In the present work, a new microporous layer (MPL) consisting of a hydrophilic layer and a hydrophobic layer is proposed. The purposes of these two layers are to, respectively, trap and retain water and to create capillary pressure to prevent water loss. Our experiments have shown that the use of this novel MPL at the anode and cathode can increase the rate of water recovery and water retention, resulting in an increase in the local water concentration. As a result, the use of this dual-layer MPL to either electrode of a passive DMFC operating with neat methanol leads to a significant performance boost.

Germanium oxide removal by citric acid and thiol passivation from citric acid-terminated Ge(100).

PubMed

Collins, Gillian; Aureau, Damien; Holmes, Justin D; Etcheberry, Arnaud; O'Dwyer, Colm

2014-12-02

Many applications of germanium (Ge) are underpinned by effective oxide removal and surface passivation. This important surface treatment step often requires H-X (X = Cl, Br, I) or HF etchants. Here, we show that aqueous citric acid solutions are effective in the removal of GeOx. The stability of citric acid-treated Ge(100) is compared to HF and HCl treated surfaces and analyzed by X-ray photoelectron spectroscopy. Further Ge surface passivation was investigated by thiolation using alkane monothiols and dithiols. The organic passivation layers show good stability with no oxide regrowth observed after 3 days of ambient exposure.

Design of a Three-Layer Antireflection Coating for High Efficiency Indium Phosphide Solar Cells Using a Chemical Oxide as First Layer

NASA Technical Reports Server (NTRS)

Moulot, Jacques; Faur, Mircea; Faur, Maria; Goradia, Chandra; Goradia, Manju; Bailey, Sheila

1995-01-01

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 microns of the illuminated surface of the cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with the p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally, a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown, thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3- layer AR coating for thermally diffused p(+)n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p(+) emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as a fairly efficient antireflective layer yielding a measured record high AM0, 25 C, open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3, MgF2 or ZnS, MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductor materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating, should work well for essentially all III-V compound-based solar cells.

Design of a three-layer antireflection coating for high efficiency indium phosphide solar cells using a chemical oxide as first layer

NASA Technical Reports Server (NTRS)

Moulot, Jacques; Faur, M.; Faur, M.; Goradia, C.; Goradia, M.; Bailey, S.

1995-01-01

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3 and MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductors materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating should work well for all III-V compound-based solar cells.

Revealing Nanoscale Passivation and Corrosion Mechanisms of Reactive Battery Materials in Gas Environments.

PubMed

Li, Yuzhang; Li, Yanbin; Sun, Yongming; Butz, Benjamin; Yan, Kai; Koh, Ai Leen; Zhao, Jie; Pei, Allen; Cui, Yi

2017-08-09

Lithium (Li) metal is a high-capacity anode material (3860 mAh g -1 ) that can enable high-energy batteries for electric vehicles and grid-storage applications. However, Li metal is highly reactive and repeatedly consumed when exposed to liquid electrolyte (during battery operation) or the ambient environment (throughout battery manufacturing). Studying these corrosion reactions on the nanoscale is especially difficult due to the high chemical reactivity of both Li metal and its surface corrosion films. Here, we directly generate pure Li metal inside an environmental transmission electron microscope (TEM), revealing the nanoscale passivation and corrosion process of Li metal in oxygen (O 2 ), nitrogen (N 2 ), and water vapor (H 2 O). We find that while dry O 2 and N 2 (99.9999 vol %) form uniform passivation layers on Li, trace water vapor (∼1 mol %) disrupts this passivation and forms a porous film on Li metal that allows gas to penetrate and continuously react with Li. To exploit the self-passivating behavior of Li in dry conditions, we introduce a simple dry-N 2 pretreatment of Li metal to form a protective layer of Li nitride prior to battery assembly. The fast ionic conductivity and stable interface of Li nitride results in improved battery performance with dendrite-free cycling and low voltage hysteresis. Our work reveals the detailed process of Li metal passivation/corrosion and demonstrates how this mechanistic insight can guide engineering solutions for Li metal batteries.

A quasi-global approach to improve day-time satellite surface soil moisture anomalies through land surface temperature input

USDA-ARS?s Scientific Manuscript database

Passive microwave observations from various space borne sensors have been linked to soil moisture of the Earth’s surface layer. The new generation passive microwave sensors are dedicated to retrieving this variable and make observations in the single, theoretically optimal L-band frequency (1-2 GHz)...

Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate

NASA Astrophysics Data System (ADS)

Liu, Chen; Lü, Hongliang; Yang, Tong; Zhang, Yuming; Zhang, Yimen; Liu, Dong; Ma, Zhenqiang; Yu, Weijian; Guo, Lixin

2018-06-01

Interfacial and electrical properties were investigated on metal-oxidesemiconductor capacitors (MOSCAPs) fabricated with bilayer ZnO/ZrO2 films by atomic layer deposition (ALD) on p-In0.2Ga0.8As substrates. The ZnO passivated In0.2Ga0.8As MOSCAPs have exhibited significantly improved capacitance-voltage (C-V) characteristics with the suppressed "stretched out" effect, increased accumulation capacitance and reduced accumulation frequency dispersion as well as the lower gate leakage current. In addition, the interface trap density (Dit) estimated by the Terman method was decreased dramatically for ZnO passivated p-In0.2Ga0.8As. The inherent mechanism is attributed to the fact that an ultrathin ZnO IPL employed by ALD prior to ZrO2 dielectric deposition can effectively suppress the formation of defect-related low-k oxides and As-As dimers at the interface, thus effectively improving the interface quality by largely removing the border traps aligned near the valence band edge of the p-In0.2Ga0.8As substrate.

Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilking, S., E-mail: Svenja.Wilking@uni-konstanz.de; Ebert, S.; Herguth, A.

The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550 °C seems tomore » be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects.« less

Retardation mechanism of ultrathin Al2O3 interlayer on Y2O3 passivated gallium nitride surface.

PubMed

Quah, Hock Jin; Cheong, Kuan Yew

2014-05-28

A systematic investigation was carried out by incorporating an ultrathin aluminum oxide (Al2O3) as an interlayer between yttrium oxide (Y2O3) passivation layer and GaN substrate. The sandwiched samples were then subjected to postdeposition annealing in oxygen ambient from 400 to 800 °C. The Al2O3 interlayer was discovered to play a significant role in slowing down inward diffusion of oxygen through the Y2O3 passivation layer as well as in impeding outward diffusion of Ga(3+) and N(3-) from the decomposed GaN surface. These beneficial effects have suppressed subsequent formation of interfacial layer. A mechanism in association with the function of Al2O3 as an interlayer was suggested and discussed. The mechanism was explicitly described on the basis of the obtained results from X-ray diffraction, X-ray photoelectron spectroscopy, energy-filtered transmission electron microscopy (TEM), high resolution TEM, and electron energy loss spectroscopy line scan. A correlation between the proposed mechanism and metal-oxide-semiconductor characteristics of Y2O3/Al2O3/GaN structure has been proposed.

Passivation of uranium towards air corrosion by N 2+ and C + ion implantation

NASA Astrophysics Data System (ADS)

Arkush, R.; Mintz, M. H.; Shamir, N.

2000-10-01

The passivation of uranium surfaces against air corrosion, by ion implantation processes was studied, using surface analysis methods. Implanting 45 keV N +2 and C + ions produces thin modified surface layers with gradual gradients of the corresponding compounds (i.e., nitrides and carbides, respectively), which avoid the formation of discontinuous interfaces typical to coatings. Such gradual interfaces impart excellent mechanical stability and adhesion to the modified layers, in spite of the large misfit between the metal substrate and the implantation on induced compounds. It turns out that these layers provide an almost absolute protection against air corrosion. A rapid initial stage of oxidation of the modified surface layers takes place, forming very thin protective oxidation zones (1-4 nm thick), which practically stop further air oxidation for years. The mechanism of the initial oxidation stage of the modified layers seems to vary with the type of surface (i.e., either nitrides or carbides). However, in any case the protection ability of the formed oxidation products is excellent, probably due to the close match between these compounds and the underlying nitrides or carbides.

Active sampling technique to enhance chemical signature of buried explosives

NASA Astrophysics Data System (ADS)

Lovell, John S.; French, Patrick D.

2004-09-01

Deminers and dismounted countermine engineers commonly use metal detectors, ground penetrating radar and probes to locate mines. Many modern landmines have a very low metal content, which severely limits the effectiveness of metal detectors. Canines have also been used for landmine detection for decades. Experiments have shown that canines smell the explosives which are known to leak from most types of landmines. The fact that dogs can detect landmines indicates that vapor sensing is a viable approach to landmine detection. Several groups are currently developing systems to detect landmines by "sniffing" for the ultra-trace explosive vapors above the soil. The amount of material that is available to passive vapor sensing systems is limited to no more than the vapor in equilibrium with the explosive related chemicals (ERCs) distributed in the surface soils over and near the landmine. The low equilibrium vapor pressure of TNT in the soil/atmosphere boundary layer and the limited volume of the boundary layer air imply that passive chemical vapor sensing systems require sensitivities in the picogram range, or lower. ADA is working to overcome many of the limitations of passive sampling methods, by the use of an active sampling method that employs a high-powered (1,200+ joules) strobe lamp to create a highly amplified plume of vapor and/or ERC-bearing fine particulates. Initial investigations have demonstrated that this approach can amplify the detectability of TNT by two or three orders of magnitude. This new active sampling technique could be used with any suitable explosive sensor.

Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Wang, Qian; Cheng, Xinhong; Zheng, Li; Shen, Lingyan; Zhang, Dongliang; Gu, Ziyue; Qian, Ru; Cao, Duo; Yu, Yuehui

2018-01-01

The influence of lanthanum silicate (LaSiOx) passivation interlayer on the band alignment between plasma enhanced atomic layer deposition (PEALD)-Al2O3 films and 4H-SiC was investigated by high resolution X-ray photoelectron spectroscopy (XPS). An ultrathin in situ LaSiOx interfacial passivation layer (IPL) was introduced between the Al2O3 gate dielectric and the 4H-SiC substrate to enhance the interfacial characteristics. The valence band offset (VBO) and corresponding conduction band offset (CBO) for the Al2O3/4H-SiC interface without any passivation were extracted to be 2.16 eV and 1.49 eV, respectively. With a LaSiOx IPL, a VBO of 1.79 eV and a CBO of 1.86 eV could be obtained across the Al2O3/4H-SiC interface. The difference in the band alignments was dominated by the band bending or band shift in the 4H-SiC substrate as a result of different interfacial layers (ILs) formed at the interface. This understanding of the physical details of the band alignment could be a good foundation for Al2O3/LaSiOx/4H-SiC heterojunctions applied in the 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).

The Relative Roles of Passive Surface Forces and Active Ion Transport in the Modulation of Airway Surface Liquid Volume and Composition

PubMed Central

Tarran, Robert; Grubb, Barbara R.; Gatzy, John T.; Davis, C. William; Boucher, Richard C.

2001-01-01

Two hypotheses have been proposed recently that offer different views on the role of airway surface liquid (ASL) in lung defense. The “compositional” hypothesis predicts that ASL [NaCl] is kept low (<50 mM) by passive forces to permit antimicrobial factors to act as a chemical defense. The “volume” hypothesis predicts that ASL volume (height) is regulated isotonically by active ion transport to maintain efficient mechanical mucus clearance as the primary form of lung defense. To compare these hypotheses, we searched for roles for: (1) passive forces (surface tension, ciliary tip capillarity, Donnan, and nonionic osmolytes) in the regulation of ASL composition; and (2) active ion transport in ASL volume regulation. In primary human tracheobronchial cultures, we found no evidence that a low [NaCl] ASL could be produced by passive forces, or that nonionic osmolytes contributed substantially to ASL osmolality. Instead, we found that active ion transport regulated ASL volume (height), and that feedback existed between the ASL and airway epithelia to govern the rate of ion transport and volume absorption. The mucus layer acted as a “reservoir” to buffer periciliary liquid layer height (7 μm) at a level optimal for mucus transport by donating or accepting liquid to or from the periciliary liquid layer, respectively. These data favor the active ion transport/volume model hypothesis to describe ASL physiology. PMID:11479349

Enhancement of two dimensional electron gas concentrations due to Si{sub 3}N{sub 4} passivation on Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure: strain and interface capacitance analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dinara, Syed Mukulika, E-mail: smdinara.iit@gmail.com; Jana, Sanjay Kr.; Ghosh, Saptarsi

2015-04-15

Enhancement of two dimensional electron gas (2DEG) concentrations at Al{sub 0.3}Ga{sub 0.7}N/GaN hetero interface after a-Si{sub 3}N{sub 4} (SiN) passivation has been investigated from non-destructive High Resolution X-ray Diffraction (HRXRD) analysis, depletion depth and capacitance-voltage (C-V) profile measurement. The crystalline quality and strained in-plane lattice parameters of Al{sub 0.3}Ga{sub 0.7}N and GaN were evaluated from double axis (002) symmetric (ω-2θ) diffraction scan and double axis (105) asymmetric reciprocal space mapping (DA RSM) which revealed that the tensile strain of the Al{sub 0.3}Ga{sub 0.7}N layer increased by 15.6% after SiN passivation. In accordance with the predictions from theoretical solution of Schrödinger-Poisson’smore » equations, both electrochemical capacitance voltage (ECV) depletion depth profile and C-V characteristics analyses were performed which implied effective 9.5% increase in 2DEG carrier density after passivation. The enhancement of polarization charges results from increased tensile strain in the Al{sub 0.3}Ga{sub 0.7}N layer and also due to the decreased surface states at the interface of SiN/Al{sub 0.3}Ga{sub 0.7}N layer, effectively improving the carrier confinement at the interface.« less

Tuning light emission of PbS nanocrystals from infrared to visible range by cation exchange

PubMed Central

Binetti, Enrico; Striccoli, Marinella; Sibillano, Teresa; Giannini, Cinzia; Brescia, Rosaria; Falqui, Andrea; Comparelli, Roberto; Corricelli, Michela; Tommasi, Raffaele; Agostiano, Angela; Curri, M Lucia

2015-01-01

Colloidal semiconductor nanocrystals, with intense and sharp-line emission between red and near-infrared spectral regions, are of great interest for optoelectronic and bio-imaging applications. The growth of an inorganic passivation layer on nanocrystal surfaces is a common strategy to improve their chemical and optical stability and their photoluminescence quantum yield. In particular, cation exchange is a suitable approach for shell growth at the expense of the nanocrystal core size. Here, the cation exchange process is used to promote the formation of a CdS passivation layer on the surface of very small PbS nanocrystals (2.3 nm in diameter), blue shifting their optical spectra and yielding luminescent and stable nanostructures emitting in the range of 700–850 nm. Structural, morphological and compositional investigation confirms the nanocrystal size contraction after the cation-exchange process, while the PbS rock-salt crystalline phase is retained. Absorption and photoluminescence spectroscopy demonstrate the growth of a passivation layer with a decrease of the PbS core size, as inferred by the blue-shift of the excitonic peaks. The surface passivation strongly increases the photoluminescence intensity and the excited state lifetime. In addition, the nanocrystals reveal increased stability against oxidation over time. Thanks to their absorption and emission spectral range and the slow recombination dynamics, such highly luminescent nano-objects can find interesting applications in sensitized photovoltaic cells and light-emitting devices. PMID:27877842

Laser Material Processing for Microengineering Applications

NASA Technical Reports Server (NTRS)

Helvajian, H.

1995-01-01

The processing of materials via laser irradiation is presented in a brief survey. Various techniques currently used in laser processing are outlined and the significance to the development of space qualified microinstrumentation are identified. In general the laser processing technique permits the transferring of patterns (i.e. lithography), machining (i.e. with nanometer precision), material deposition (e.g., metals, dielectrics), the removal of contaminants/debris/passivation layers and the ability to provide process control through spectroscopy.

Boundary Layer Remote Sensing with Combined Active and Passive Techniques: GPS Radio Occultation and High-Resolution Stereo Imaging (WindCam) Small Satellite Concept

NASA Technical Reports Server (NTRS)

Mannucci, A.J.; Wu, D.L.; Teixeira, J.; Ao, C.O.; Xie, F.; Diner, D.J.; Wood, R.; Turk, Joe

2012-01-01

Objective: significant progress in understanding low-cloud boundary layer processes. This is the Single largest uncertainty in climate projections. Radio occultation has unique features suited to boundary layer remote sensing (1) Cloud penetrating (2) Very high vertical resolution (approximately 50m-100m) (3) Sensitivity to thermodynamic variables

Composite passive damping struts for large precision structures

NASA Technical Reports Server (NTRS)

Dolgin, Benjamin P. (Inventor)

1993-01-01

In the field of viscoelastic dampers, a new strut design comprises a viscoelastic material sandwiched between multiple layers, some of which layers bear and dampen load force. In one embodiment, the layers are composite plies of opposing orientation. In another embodiment, the strut utilizes a viscoelastic layer sandwiched between V-shaped composite plies. In a third embodiment, a viscoelastic layer is sandwiched between sine-shaped plies. Strut strength is equal to or greater than conventional aluminum struts due to the unique high interlaminar shear ply design.

Functional and esthetic outcome enhancement of periodontal surgery by application of plastic surgery principles.

PubMed

Hürzeler, M B; Weng, D

1999-02-01

The closure of surgical wounds in a layer-by-layer fashion, a common principle of plastic surgery, is applied in this article to the field of periodontal surgery with the introduction of a new flap design. The suggested technique is indicated with all periodontal procedures that aim for hard and soft tissue augmentation (guided bone regeneration, mucogingival surgery, or plastic periodontal surgery) where passive, tension-free wound closure is fundamental for wound healing and a successful functional and esthetic outcome. By means of a series of incisions, buccal and lingual flaps are split several times; this results in a double-partial thickness flap and a coronally positioned palatal sliding flap, respectively. Thus, several tissue layers are obtained and the passive advancement of flaps becomes possible for the coverage of augmented areas. Wound closure with microsurgical suture material is accomplished in a multilayer approach, which ensures adaptation and closure of the outer tissue layers without any tension. Two case reports demonstrate the new plastic periodontal approach.

Low cost fuel cell diffusion layer configured for optimized anode water management

DOEpatents

Owejan, Jon P; Nicotera, Paul D; Mench, Matthew M; Evans, Robert E

2013-08-27

A fuel cell comprises a cathode gas diffusion layer, a cathode catalyst layer, an anode gas diffusion layer, an anode catalyst layer and an electrolyte. The diffusion resistance of the anode gas diffusion layer when operated with anode fuel is higher than the diffusion resistance of the cathode gas diffusion layer. The anode gas diffusion layer may comprise filler particles having in-plane platelet geometries and be made of lower cost materials and manufacturing processes than currently available commercial carbon fiber substrates. The diffusion resistance difference between the anode gas diffusion layer and the cathode gas diffusion layer may allow for passive water balance control.

Compressibility effect on thermal coherent structures in spatially-developing turbulent boundary layers via DNS

NASA Astrophysics Data System (ADS)

Araya, Guillermo; Jansen, Kenneth

2017-11-01

DNS of compressible spatially-developing turbulent boundary layers is performed at a Mach number of 2.5 over an isothermal flat plate. Turbulent inflow information is generated by following the concept of the rescaling-recycling approach introduced by Lund et al. (J. Comp. Phys. 140, 233-258, 1998); although, the proposed methodology is extended to compressible flows. Furthermore, a dynamic approach is employed to connect the friction velocities at the inlet and recycle stations (i.e., there is no need of an empirical correlation as in Lund et al.). Additionally, the Morkovin's Strong Reynolds Analogy (SRA) is used in the rescaling process of the thermal fluctuations from the recycle plane. Low/high order flow statistics is compared with direct simulations of an incompressible isothermal ZPG boundary layer at similar Reynolds numbers and temperature regarded as a passive scalar. Focus is given to the effect assessment of flow compressibility on the dynamics of thermal coherent structures. AFOSR #FA9550-17-1-0051.

Enhancing Stability of Perovskite Solar Cells to Moisture by the Facile Hydrophobic Passivation.

PubMed

Hwang, Insung; Jeong, Inyoung; Lee, Jinwoo; Ko, Min Jae; Yong, Kijung

2015-08-12

In this study, a novel and facile passivation process for a perovskite solar cell is reported. Poor stability in ambient atmosphere, which is the most critical demerit of a perovskite solar cell, is overcome by a simple passivation process using a hydrophobic polymer layer. Teflon, the hydrophobic polymer, is deposited on the top of a perovskite solar cell by a spin-coating method. With the hydrophobic passivation, the perovskite solar cell shows negligible degradation after a 30 day storage in ambient atmosphere. Suppressed degradation of the perovskite film is proved in various ways: X-ray diffraction, light absorption spectrum, and quartz crystal microbalance. This simple but effective passivation process suggests new kind of approach to enhance stability of perovskite solar cells to moisture.

Investigation of hexagonal boron nitride as an atomically thin corrosion passivation coating in aqueous solution.

PubMed

Zhang, Jing; Yang, Yingchao; Lou, Jun

2016-09-09

Hexagonal boron nitride (h-BN) atomic layers were utilized as a passivation coating in this study. A large-area continuous h-BN thin film was grown on nickel foil using a chemical vapor deposition method and then transferred onto sputtered copper as a corrosion passivation coating. The corrosion passivation performance in a Na2SO4 solution of bare and coated copper was investigated by electrochemical methods including cyclic voltammetry (CV), Tafel polarization and electrochemical impedance spectroscopy (EIS). CV and Tafel analysis indicate that the h-BN coating could effectively suppress the anodic dissolution of copper. The EIS fitting result suggests that defects are the dominant leakage source on h-BN films, and improved anti-corrosion performances could be achieved by further passivating these defects.

Molecular Monolayers for Electrical Passivation and Functionalization of Silicon-Based Solar Energy Devices.

PubMed

Veerbeek, Janneke; Firet, Nienke J; Vijselaar, Wouter; Elbersen, Rick; Gardeniers, Han; Huskens, Jurriaan

2017-01-11

Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based solar cells. Organic monolayers were coupled to silicon surfaces by hydrosilylation in order to avoid an insulating silicon oxide layer at the surface. Monolayers of 1-tetradecyne were shown to passivate silicon micropillar-based solar cells with radial junctions, by which the efficiency increased from 8.7% to 9.9% for n + /p junctions and from 7.8% to 8.8% for p + /n junctions. This electrical passivation of the surface, most likely by removal of dangling bonds, is reflected in a higher shunt resistance in the J-V measurements. Monolayers of 1,8-nonadiyne were still reactive for click chemistry with a model catalyst, thus enabling simultaneous passivation and future catalyst coupling.

Passivation Characteristics of Alloy Corrosion-Resistant Steel Cr10Mo1 in Simulating Concrete Pore Solutions: Combination Effects of pH and Chloride

PubMed Central

Ai, Zhiyong; Sun, Wei; Jiang, Jinyang; Song, Dan; Ma, Han; Zhang, Jianchun; Wang, Danqian

2016-01-01

The electrochemical behaviour for passivation of new alloy corrosion-resistant steel Cr10Mo1 immersed in alkaline solutions with different pH values (13.3, 12.0, 10.5, and 9.0) and chloride contents (0.2 M and 1.0 M), was investigated by various electrochemical techniques: linear polarization resistance, electrochemical impedance spectroscopy and capacitance measurements. The chemical composition and structure of passive films were determined by XPS. The morphological features and surface composition of the immersed steel were evaluated by SEM together with EDS chemical analysis. The results evidence that pH plays an important role in the passivation of the corrosion-resistant steel and the effect is highly dependent upon the chloride contents. In solutions with low chloride (0.2 M), the corrosion-resistant steel has notably enhanced passivity with pH falling from 13.3 to 9.0, but does conversely when in presence of high chloride (1.0 M). The passive film on the corrosion-resistant steel presents a bilayer structure: an outer layer enriched in Fe oxides and hydroxides, and an inner layer, rich in Cr species. The film composition varies with pH values and chloride contents. As the pH drops, more Cr oxides are enriched in the film while Fe oxides gradually decompose. Increasing chloride promotes Cr oxides and Fe oxides to transform into their hydroxides with little protection, and this is more significant at lower pH (10.5 and 9.0). These changes annotate passivation characteristics of the corrosion-resistant steel in the solutions of different electrolyte. PMID:28773867

The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3

NASA Astrophysics Data System (ADS)

Liao, Baochen; Stangl, Rolf; Mueller, Thomas; Lin, Fen; Bhatia, Charanjit S.; Hoex, Bram

2013-01-01

The effect of light soaking of crystalline silicon wafer lifetime samples surface passivated by thermal atomic layer deposited (ALD) Al2O3 is investigated in this paper. Contrary to other passivation materials used in solar cell applications (i.e., SiO2, SiNx), using thermal ALD Al2O3, an increase in effective carrier lifetime after light soaking under standard testing conditions is observed for both p-type (˜45%) and n-type (˜60%) FZ c-Si lifetime samples. After light soaking and storing the samples in a dark and dry environment, the effective lifetime decreases again and practically returns to the value before light soaking. The rate of lifetime decrease after light soaking is significantly slower than the rate of lifetime increase by light soaking. To investigate the underlying mechanism, corona charge experiments are carried out on p-type c-Si samples before and after light soaking. The results indicate that the negative fixed charge density Qf present in the Al2O3 films increases due to the light soaking, which results in an improved field-effect passivation. Numerical calculations also confirm that the improved field-effect passivation is the main contributor for the increased effective lifetime after light soaking. To further understand the light soaking phenomenon, a kinetic model—a charge trapping/de-trapping model—is proposed to explain the time dependent behavior of the lifetime increase/decrease observed under/after light soaking. The trap model fits the experimental results very well. The observed light enhanced passivation for ALD Al2O3 passivated c-Si is of technological relevance, because solar cell devices operate under illumination, thus an increase in solar cell efficiency due to light soaking can be expected.

Passivation Characteristics of Alloy Corrosion-Resistant Steel Cr10Mo1 in Simulating Concrete Pore Solutions: Combination Effects of pH and Chloride.

PubMed

Ai, Zhiyong; Sun, Wei; Jiang, Jinyang; Song, Dan; Ma, Han; Zhang, Jianchun; Wang, Danqian

2016-09-01

The electrochemical behaviour for passivation of new alloy corrosion-resistant steel Cr10Mo1 immersed in alkaline solutions with different pH values (13.3, 12.0, 10.5, and 9.0) and chloride contents (0.2 M and 1.0 M), was investigated by various electrochemical techniques: linear polarization resistance, electrochemical impedance spectroscopy and capacitance measurements. The chemical composition and structure of passive films were determined by XPS. The morphological features and surface composition of the immersed steel were evaluated by SEM together with EDS chemical analysis. The results evidence that pH plays an important role in the passivation of the corrosion-resistant steel and the effect is highly dependent upon the chloride contents. In solutions with low chloride (0.2 M), the corrosion-resistant steel has notably enhanced passivity with pH falling from 13.3 to 9.0, but does conversely when in presence of high chloride (1.0 M). The passive film on the corrosion-resistant steel presents a bilayer structure: an outer layer enriched in Fe oxides and hydroxides, and an inner layer, rich in Cr species. The film composition varies with pH values and chloride contents. As the pH drops, more Cr oxides are enriched in the film while Fe oxides gradually decompose. Increasing chloride promotes Cr oxides and Fe oxides to transform into their hydroxides with little protection, and this is more significant at lower pH (10.5 and 9.0). These changes annotate passivation characteristics of the corrosion-resistant steel in the solutions of different electrolyte.

Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, Yuguo; Upadhyaya, Vijaykumar; Chen, Chia-Wei

This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iVoc of 714mV and saturation current density J0b of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids,more » this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers.« less

Nanostructured Materials

DTIC Science & Technology

2012-08-30

improve oxidation resistance due to a rapidly forming ceramic-like, passivating and self - healing silica layer when exposed to high incident fluxes...have stronger bond dissociation energies (-8.3 eV). The POSS cage is not destroyed by the AO, but forms a passivating self -rigidizing/ self - healing ...polymers (including amorphous, semi-crystalline, crystalline, and rubber , etc.) possess con- siderable amounts of internal and external free volume

Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide

NASA Astrophysics Data System (ADS)

Cui, Jie; Wan, Yimao; Cui, Yanfeng; Chen, Yifeng; Verlinden, Pierre; Cuevas, Andres

2017-01-01

This paper investigates the application of hafnium oxide (HfO2) thin films to crystalline silicon (c-Si) solar cells. Excellent passivation of both n- and p-type crystalline silicon surfaces has been achieved by the application of thin HfO2 films prepared by atomic layer deposition. Effective surface recombination velocities as low as 3.3 and 9.9 cm s-1 have been recorded with 15 nm thick films on n- and p-type 1 Ω cm c-Si, respectively. The surface passivation by HfO2 is activated at 350 °C by a forming gas anneal. Capacitance voltage measurement shows an interface state density of 3.6 × 1010 cm-2 eV-1 and a positive charge density of 5 × 1011 cm-2 on annealed p-type 1 Ω cm c-Si. X-ray diffraction unveils a positive correlation between surface recombination and crystallinity of the HfO2 and a dependence of the crystallinity on both annealing temperature and film thickness. In summary, HfO2 is demonstrated to be an excellent candidate for surface passivation of crystalline silicon solar cells.

Highly Stable Near-Unity Photoluminescence Yield in Monolayer MoS2 by Fluoropolymer Encapsulation and Superacid Treatment.

PubMed

Kim, Hyungjin; Lien, Der-Hsien; Amani, Matin; Ager, Joel W; Javey, Ali

2017-05-23

Recently, there has been considerable research interest in two-dimensional (2D) transition-metal dichalcogenides (TMDCs) for future optoelectronic applications. It has been shown that surface passivation with the organic nonoxidizing superacid bis(trifluoromethane)sulfonamide (TFSI) produces MoS 2 and WS 2 monolayers whose recombination is at the radiative limit, with a photoluminescence (PL) quantum yield (QY) of ∼100%. While the surface passivation persists under ambient conditions, exposure to conditions such as water, solvents, and low pressure found in typical semiconductor processing degrades the PL QY. Here, an encapsulation/passivation approach is demonstrated that yields near-unity PL QY in MoS 2 and WS 2 monolayers which are highly stable against postprocessing. The approach consists of two simple steps: encapsulation of the monolayers with an amorphous fluoropolymer and a subsequent TFSI treatment. The TFSI molecules are able to diffuse through the encapsulation layer and passivate the defect states of the monolayers. Additionally, we demonstrate that the encapsulation layer can be patterned by lithography and is compatible with subsequent fabrication processes. Therefore, our work presents a feasible route for future fabrication of highly efficient optoelectronic devices based on TMDCs.

The role of fluids in rock layering development: a pressure solution self-organized process revealed by laboratory experiments

NASA Astrophysics Data System (ADS)

Gratier, Jean-Pierre; Noiriel, Catherine; Renard, Francois

2015-04-01

Natural deformation of rocks is often associated with stress-driven differentiation processes leading to irreversible transformations of their microstructures. The development mechanisms of such processes during diagenesis, tectonic, metamorphism or fault differentiation are poorly known as they are difficult to reproduce experimentally due to the very slow kinetics of stress-driven chemical processes. Here, we show that experimental compaction with development of differentiated layering, similar to what happens in natural deformation, can be obtained by indenter techniques in laboratory conditions. Samples of plaster mixed with clay and of diatomite loosely interbedded with volcanic dust were loaded in presence of their saturated aqueous solutions during several months at 40°C and 150°C, respectively. High-resolution X-ray microtomography and scanning electron microscopy observations show that the layering development is a pressure solution self-organized process. Stress-driven dissolution of the soluble minerals (either gypsum or silica) is initiated in the areas initially richer in insoluble minerals (clays or volcanic dust) because the kinetics of diffusive mass transfer along the soluble/insoluble mineral interfaces is much faster than along the healed boundaries of the soluble minerals. The passive concentration of insoluble minerals amplifies the localization of dissolution along some layers oriented perpendicular to the maximum compressive stress. Conversely, in the areas with initial low content in insoluble minerals and clustered soluble minerals, dissolution is slower. Consequently, these areas are less deformed, they host the re-deposition of the soluble species and they act as rigid objects that concentrate the dissolution near their boundaries thus amplifying the differentiation. A crucial parameter required for self-organized process of pressure solution is the presence of a fluid that is a good solvent of at least some of the rock-forming minerals. Another general requirement for the development of such differentiated layering is the heterogeneous mixing of variously soluble and insoluble species. From a general point of view, the development of diagenetic or tectonic layering has crucial consequences in geological processes. The main one is to modify the composition and microstructure of rocks by dissolution of the most soluble species, passive concentration of the insoluble species and re-deposition of the dissolved species at a distance that depends on the transport efficiency (diffusion or advection). Consequently, layering development modifies both the rheological and the transfer properties of rocks. It is the most common strain localization process in the upper crust when a reactive fluid phase is present, complementary to other strain localization processes in the lithosphere. A specific effect is the development of anisotropic properties that may favor local sliding on weak surfaces. This is particularly important in fault zones where pressure solution processes are at work. Modeling of differentiated layering during natural deformation must be rooted in the stress-driven dissolution and transport properties of the various minerals forming the rocks, and on the evolution of their rheological properties. The strength evolution can be taken into account through a weakening factor in the zone of dissolution and a strengthening factor in the zone of deposition. The kinetics evolution is controlled by the critical parameters of pressure solution.

CFD-based aero-optical analysis of flow fields over two-dimensional cavities with active flow control

NASA Astrophysics Data System (ADS)

Tan, Yan

Prediction and control of optical wave front distortions and aberrations in a high energy laser beam due to interaction with an unsteady highly non-uniform flow field is of great importance in the development of directed energy weapon systems for Unmanned Air Vehicles (UAV). The unsteady shear layer over the weapons bay cavity is the primary cause of this distortion of the optical wave front. The large scale vortical structure of the shear layer over the cavity can be significantly reduced by employing an active flow control technique combined with passive flow control. This dissertation explores various active and passive control methods to suppress the cavity oscillations and thereby improve the aero-optics of cavity flow. In active flow control technique, a steady or a pulsed jet is applied at the sharp leading edge of cavities of different aspect ratios L/D (=2, 4, 15), where L and D are the width and the depth of a cavity respectively. In the passive flow control approach, the sharp leading or trailing edge of the cavity is modified into a round edge of different radii. Both of these active and passive flow control approaches are studied independently and in combination. Numerical simulations are performed, with and without active flow control for subsonic free stream flow past two-dimensional sharp and round leading or trailing edge cavities using Unsteady Reynolds-Averaged Navier-Stokes (URANS) equations with a two-equation Shear Stress Transport (SST) turbulence model or a hybrid SST/Large Eddy Simulation (LES) model. Aero-optical analysis is developed and applied to all the simulation cases. Index of refraction and Optical Path Difference (OPD) are compared for flow fields without and with active flow control. Root-Mean-Square (RMS) value of OPD is calculated and compared with the experimental data, where available. The effect of steady and pulsed blowing on buffet loading on the downstream face of the cavity is also computed. Using the numerical simulations, the most effective approach for controlling the cavity oscillations and aero-optical signatures is determined.

Durable silver coating for mirrors

DOEpatents

Wolfe, Jesse D.; Thomas, Norman L.

2000-01-01

A durable multilayer mirror includes reflective layers of aluminum and silver and has high reflectance over a broad spectral range from ultraviolet to visible to infrared. An adhesion layer of a nickel and/or chromium alloy or nitride is deposited on an aluminum surface, and a thin layer of silver is then deposited on the adhesion layer. The silver layer is protected by a passivation layer of a nickel and/or chromium alloy or nitride and by one or more durability layers made of metal oxides and typically a first layer of metal nitride. The durability layers may include a composite silicon aluminum nitride and an oxinitride transition layer to improve bonding between nitride and oxide layers.

An International Symposium and Exhibition on Active Materials and Adaptive Structures.

DTIC Science & Technology

1991-11-08

into Tubular Composite Structures Using Embedded Constraining Layers 232 S. Sattinger, Z. Sanjana, Westinghouse Science and Technology Center...struts, constrained layers , and tuned mass dampers. The most effective damping treatment was selected for each mode depending on its modal...paper) the passive damping component* in the structure will be deserth^ These »dude constrained layer viscoelastic struts« viscous DStrlJi . .^ of

Integrated power passives

NASA Technical Reports Server (NTRS)

Xie, Huikai (Inventor); Ngo, Khai D. T. (Inventor)

2013-01-01

A multi-layer film-stack and method for forming the multilayer film-stack is given where a series of alternating layers of conducting and dielectric materials are deposited such that the conducting layers can be selectively addressed. The use of the method to form integratable high capacitance density capacitors and complete the formation of an integrated power system-on-a-chip device including transistors, conductors, inductors, and capacitors is also given.

Tomographic PIV Study of Hairpin Vortices

NASA Astrophysics Data System (ADS)

Sabatino, Daniel; Rossmann, Tobias

2014-11-01

Tomographic PIV is used in a free surface water channel to quantify the flow behavior of hairpin vortices that are artificially generated in a laminar boundary layer. Direct injection from a 32:1 aspect ratio slot at low blowing ratios (0 . 1 < BR < 0 . 2) is used to generate an isolated hairpin vortex in a thick laminar boundary layer (485 < Reδ* < 600). Due to the large dynamic range of length and velocity scales (the resulting vortices have advection velocities 5X greater than their tangential velocities), a tailored optical arrangement and specialized post processing techniques are required to fully capture the small-scale behavior and long-time development of the flow field. Hairpin generation and evolution are presented using the λ2 criterion derived from the instantaneous, three-dimensional velocity field. The insight provided by the tomographic data is also compared to the conclusions drawn from 2D PIV and passive scalar visualizations. Finally, the three-dimensional behavior of the measured velocity field is correlated with that of a simultaneously imaged, passive scalar dye that marks the boundary of the injected fluid, allowing the examination of the entrainment behavior of the hairpin. Supported by the National Science Foundation under Grant CBET-1040236.

Thermal Remote Anemometer Device

NASA Technical Reports Server (NTRS)

Heyman, Joseph S.; Heath, D. Michele; Winfree, William P.; Miller, William E.; Welch, Christopher S.

1988-01-01

Thermal Remote Anemometer Device developed for remote, noncontacting, passive measurement of thermal properties of sample. Model heated locally by scanning laser beam and cooled by wind in tunnel. Thermal image of model analyzed to deduce pattern of airflow around model. For materials applications, system used for evaluation of thin films and determination of thermal diffusivity and adhesive-layer contact. For medical applications, measures perfusion through skin to characterize blood flow and used to determine viabilities of grafts and to characterize tissues.

Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

PubMed

Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

2015-08-12

For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics.

Effects of surface passivation dielectrics on carrier transport in AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Oh, Sejoon; Jang, Han-Soo; Choi, Chel-Jong; Cho, Jaehee

2018-04-01

Dielectric layers prepared by different deposition methods were used for the surface passivation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and the corresponding electrical characteristics were examined. Increases in the sheet charge density and the maximum drain current by approximately 45% and 28%, respectively, were observed after the deposition of a 100 nm-thick SiO2 layer by plasma-enhanced chemical vapor deposition (PECVD) on the top of the AlGaN/GaN HFETs. However, SiO2 deposited by a radio frequency (rf) sputter system had the opposite effect. As the strain applied to AlGaN was influenced by the deposition methods used for the dielectric layers, the carrier transport in the two-dimensional electron gas formed at the interface between AlGaN and GaN was affected accordingly.

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities

NASA Astrophysics Data System (ADS)

Stegemann, Bert; Gad, Karim M.; Balamou, Patrice; Sixtensson, Daniel; Vössing, Daniel; Kasemann, Martin; Angermann, Heike

2017-02-01

Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO2/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO2/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO2/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO2/Si interfaces have been shown to generate less interface defect states.

Development of mechanical structure for the compact space IR camera MIRIS

NASA Astrophysics Data System (ADS)

Moon, Bongkon; Jeong, Woong-Seob; Cha, Sang-Mok; Park, Youngsik; Ree, Chang-Hee; Lee, Dae-Hee; Park, Sung-Joon; Nam, Uk-Won; Park, Jang-Hyun; Ka, Nung Hyun; Lee, Mi Hyun; Lee, Duk-Hang; Pyo, Jeonghyun; Rhee, Seung-Woo; Park, Jong-Oh; Lee, Hyung-Mok; Matsumoto, Toshio; Yang, Sun Choel; Han, Wonyong

2010-07-01

MIRIS is a compact near-infrared camera with a wide field of view of 3.67°×3.67° in the Korea Science and Technology Satellite 3 (STSAT-3). MIRIS will be launched warm and cool the telescope optics below 200K by pointing to the deep space on Sun-synchronous orbit. In order to realize the passive cooling, the mechanical structure was designed to consider thermal analysis results on orbit. Structural analysis was also conducted to ensure safety and stability in launching environments. To achieve structural and thermal requirements, we fabricated the thermal shielding parts such as Glass Fiber Reinforced Plastic (GFRP) pipe supports, a Winston cone baffle, aluminum-shield plates, a sunshade, a radiator and 30 layers of Multi Layer Insulation (MLI). These structures prevent the heat load from the spacecraft and the earth effectively, and maintain the temperature of the telescope optics within operating range. A micro cooler was installed in a cold box including a PICNIC detector and a filter-wheel, and cooled the detector down to a operating temperature range. We tested the passive cooling in the simulated space environment and confirmed that the required temperature of telescope can be achieved. Driving mechanism of the filter-wheel and the cold box structure were also developed for the compact space IR camera. Finally, we present the assembly procedures and the test result for the mechanical parts of MIRIS.

Passively Q-switched wavelength-tunable 1-μm fiber lasers with tapered-fiber-based black phosphorus saturable absorbers

NASA Astrophysics Data System (ADS)

Song, Huaqing; Wang, Qi; Wang, Dongdong; Li, Li

2018-03-01

In this paper, we demonstrated passively Q-switched wavelength-tunable 1-μm fiber lasers utilizing few-layer black phosphorus saturable absorbers. The few-layer BP was deposited onto the tapered fibers by an optically driven process. The wavelength tunability was achieved with a fiber Sagnac loop comprised of a piece of polarization maintaining fiber and a polarization controller. Stable Q-switching laser operations were observed at wavelengths ranging from 1040.5 to 1044.6 nm at threshold pump power of 220 mW. Maximal pulse energy of 141.27 nJ at a repetition rate of 63 kHz was recorded under pump power of 445 mW.

80-GHz AlGaInAs/InP 1.55 μm colliding-pulse mode-locked laser with low divergence angle and timing jitter

NASA Astrophysics Data System (ADS)

Hou, L. P.; Haji, M.; Li, C.; Qiu, B. C.; Bryce, A. C.

2011-07-01

We present an 80-GHz λ ~ 1.55 μm passively colliding-pulse mode-locked laser based on a novel AlGaInAs/InP epitaxial structure, which consists of a strained 3-quantum-well active layer incorporated with a passive far-field reduction layer. The device generated 910 fs pulses with a state-of-art timing jitter value of 190 fs (4 - 80 MHz), while demonstrating a low divergence angle (12.7°×26.3°) with two fold butt coupling efficiency to a flat cleaved single mode fiber when compared with the conventional mode-locked laser.

Subnanosecond Scintillation Detector

NASA Technical Reports Server (NTRS)

Hoenk, Michael (Inventor); Hennessy, John (Inventor); Hitlin, David (Inventor)

2017-01-01

A scintillation detector, including a scintillator that emits scintillation; a semiconductor photodetector having a surface area for receiving the scintillation, wherein the surface area has a passivation layer configured to provide a peak quantum efficiency greater than 40% for a first component of the scintillation, and the semiconductor photodetector has built in gain through avalanche multiplication; a coating on the surface area, wherein the coating acts as a bandpass filter that transmits light within a range of wavelengths corresponding to the first component of the scintillation and suppresses transmission of light with wavelengths outside said range of wavelengths; and wherein the surface area, the passivation layer, and the coating are controlled to increase the temporal resolution of the semiconductor photodetector.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hegedus, Steven S.

An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerflessmore » techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to achieving millisecond lifetimes in kerfless silicon materials. Laser fired contacts to n-Si were developed for the first time using a Al/Sb/Ti metal stack giving contact resistances < 5 mOhm-cm2 when fired through several different dielectric layers. A new 2 step laser+chemical etch isolation technique was developed using a sacrificial top coating which avoids laser damage to Si passivation. Regarding the heterojunction emitter, analysis of front FHJ (1D) and IBC (2D) cells with range of p-layer conditions found that a 2-stage high/low doped p-layer was optimum: the low doped region has lower defects giving higher Voc and the high doped region gave a better contact to the metal. A significant effort was spent studying the patterning process and its contribution to degradation of passivation and reproducibility. Several promising new cleaning, contact and deposition patterning and processing approaches were implemented leading to fabrication of several runs with cells having 19-20% efficiency which were stable over several months. This program resulted in the training and support of 12 graduate students, publication of 21 journal papers and 14 conference papers.« less

Low cost back contact heterojunction solar cells on thin c-Si wafers. integrating laser and thin film processing for improved manufacturability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hegedus, Steven S.

2015-09-08

An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerflessmore » techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to achieving millisecond lifetimes in kerfless silicon materials. Laser fired contacts to n-Si were developed for the first time using a Al/Sb/Ti metal stack giving contact resistances < 5 mOhm-cm2 when fired through several different dielectric layers. A new 2 step laser+chemical etch isolation technique was developed using a sacrificial top coating which avoids laser damage to Si passivation. Regarding the heterojunction emitter, analysis of front FHJ (1D) and IBC (2D) cells with range of p-layer conditions found that a 2-stage high/low doped p-layer was optimum: the low doped region has lower defects giving higher Voc and the high doped region gave a better contact to the metal. A significant effort was spent studying the patterning process and its contribution to degradation of passivation and reproducibility. Several promising new cleaning, contact and deposition patterning and processing approaches were implemented leading to fabrication of several runs with cells having 19-20% efficiency which were stable over several months. This program resulted in the training and support of 12 graduate students, publication of 21 journal papers and 14 conference papers.« less

Feasibility study of silicon nitride protection of plastic encapsulated semiconductors

NASA Technical Reports Server (NTRS)

Peters, J. W.; Hall, T. C.; Erickson, J. J.; Gebhart, F. L.

1979-01-01

The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical silicon nitride (photonitride) passivations (parallel evaluations) of integrated circuits which were then encapsulated in plastic is described. Photonitride passivation is compatible with all wire bonded lead frame assemblies, with or without initial chip passivation. Plasma nitride passivation of lead frame assemblies is possible only if the chip is passivated before lead frame assembly. The survival rate after the environmental test sequence of devices with a coating of plasma nitride on the chip and a coating of either plasma nitride or photonitride over the assembled device is significantly greater than that of devices assembled with no nitride protective coating over either chip or lead frame.

POx/Al2O3 stacks: Highly effective surface passivation of crystalline silicon with a large positive fixed charge

NASA Astrophysics Data System (ADS)

Black, Lachlan E.; Kessels, W. M. M. Erwin

2018-05-01

Thin-film stacks of phosphorus oxide (POx) and aluminium oxide (Al2O3) are shown to provide highly effective passivation of crystalline silicon (c-Si) surfaces. Surface recombination velocities as low as 1.7 cm s-1 and saturation current densities J0s as low as 3.3 fA cm-2 are obtained on n-type (100) c-Si surfaces passivated by 6 nm/14 nm thick POx/Al2O3 stacks deposited in an atomic layer deposition system and annealed at 450 °C. This excellent passivation can be attributed in part to an unusually large positive fixed charge density of up to 4.7 × 1012 cm-2, which makes such stacks especially suitable for passivation of n-type Si surfaces.

Synthesis and colloidal properties of anisotropic hydrothermal barium titanate

NASA Astrophysics Data System (ADS)

Yosenick, Timothy James

2005-11-01

Nanoparticles of high dielectric constant materials, especially BaTiO3, are required to achieve decreased layer thickness in multilayer ceramic capacitors (MLCCs). Tabular metal nanoparticles can produce thin metal layers with low surface roughness via electrophoretic deposition (EPD). To achieve similar results with dielectric layers requires the synthesis and dispersion of tabular BaTiO3 nanoparticles. The goal of this study was to investigate the deposition of thin BaTiO3 layers using a colloidal process. The synthesis, interfacial chemistry and colloidal properties of hydrothermal BaTiO3 a model particle system, was investigated. After characterization of the material system particulates were deposited to form thin layers using EPD. In the current study, the synthesis of BaTiO3 has been investigated using a hydrothermal route. TEM and AFM analyses show that the synthesized particles are single crystal with a majority of the particle having a <111> zone axis and {111} large face. The particles have a median thickness of 5.8 +/- 3.1 nm and face diameter of 27.1 +/- 12.3 nm. Particle growth was likely controlled by the formation of {111} twins and the synthesis pH which stabilizes the {111} face during growth. With limited growth in the <111> direction, the particles developed a plate-like morphology. Physical property characterization shows the powder was suitable for further processing with high purity, low hydrothermal defect concentration, and controlled stoichiometry. TEM observations of thermally treated powders indicate that the particles begin to loose the plate-like morphology by 900 °C. The aqueous passivation, dispersion, and doping of nanoscale BaTiO 3 powders was investigated. Passivation BaTiO3 was achieved through the addition of oxalic acid. The oxalic acid selectively adsorbs onto the particle surface and forms a chemically stable 2-3 nm layer of barium oxalate. The negative surface charge of the oxalate effectively passivated the BaTiO3 providing a surface suitable for the use of a cationic dispersant, polyethylenimine (PEI). Rheological properties indicate the presence of an oxalate-PEI interaction which can be detrimental to dispersion. With a better understanding of the aqueous surface chemistry of BaTiO3 the surface chemistry was manipulated to control the adsorption of aqueous soluble complexes of Co, Nb, and Bi, three common dopants in the processing of BaTiO3 Surface charge, TEM, and EDS analysis showed that while in suspension the dopants selectively absorbed onto the particle surface forming an engineered coating. (Abstract shortened by UMI.)

Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, David L.; Nemeth, William; LaSalvia, Vincenzo

2016-11-21

We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH3more » PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.« less

Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing

NASA Astrophysics Data System (ADS)

Adamczyk, Krzysztof; Søndenâ, Rune; Stokkan, Gaute; Looney, Erin; Jensen, Mallory; Lai, Barry; Rinio, Markus; Di Sabatino, Marisa

2018-02-01

In this work, we applied internal quantum efficiency mapping to study the recombination activity of grain boundaries in High Performance Multicrystalline Silicon under different processing conditions. Wafers were divided into groups and underwent different thermal processing, consisting of phosphorus diffusion gettering and surface passivation with hydrogen rich layers. After these thermal treatments, wafers were processed into heterojunction with intrinsic thin layer solar cells. Light Beam Induced Current and Electron Backscatter Diffraction were applied to analyse the influence of thermal treatment during standard solar cell processing on different types of grain boundaries. The results show that after cell processing, most random-angle grain boundaries in the material are well passivated, but small-angle grain boundaries are not well passivated. Special cases of coincidence site lattice grain boundaries with high recombination activity are also found. Based on micro-X-ray fluorescence measurements, a change in the contamination level is suggested as the reason behind their increased activity.

Mid-infrared Fe2+:ZnSe semiconductor saturable absorber mirror for passively Q-switched Er3+-doped ZBLAN fiber laser

NASA Astrophysics Data System (ADS)

Ning, Shougui; Feng, Guoying; Dai, Shenyu; Zhang, Hong; Zhang, Wei; Deng, Lijuan; Zhou, Shouhuan

2018-02-01

A mid-infrared (mid-IR) semiconductor saturable absorber mirror (SESAM) based on Fe2+:ZnSe for passively Q-switched Er3+-doped ZBLAN fiber laser has been demonstrated. Fe2+:ZnSe SESAM was fabricated by electron beam evaporation method. Fe2+ was innovatively doped into the reflective Bragg stack, in which ZnSe layer served as both doped matrix and high refractive layer during the fabricating process. By using the Fe2+:ZnSe SESAM, stable passively Q-switched pulses with the minimum pulse width of 0.43 μs under a repetition rate of 160.82 kHz were obtained. The recorded maximum average output power of 873 mW with a peak power of 12.59 W and pulse energy of 5.43 μJ were achieved. The results demonstrated a new method for fabricating Fe2+:ZnSe SESAM, which can be used in compact mid-IR Q-switched fiber laser.

Using woven carbon fiber fabric to construct gradient porous structure for passive direct methanol fuel cells

NASA Astrophysics Data System (ADS)

Yuan, Wei; Hu, Jinyi; Zhou, Bo; Deng, Jun; Zhang, Zhaochun; Tang, Yong

2015-09-01

The passive direct methanol fuel cell (DMFC) is a promising candidate power source for portable applications but has to deal with many technical challenges before practical use. This study presents a preliminary investigation on the use of a woven carbon fiber fabric (WCFF) for constructing a gradient porous structure based on the traditional design. The WCFF, carbon paper and carbon-black micro porous layer (MPL) combine into a carbon-based assembly which acts as a mass-transfer-controlling medium at the anode of a passive DMFC. Results show that this novel setup is able to significantly improve the cell performance and facilitate high-concentration operation. A maximum power density of 16.4 mWcm-2 is obtained when two layers of the WCFF are used at a methanol concentration of 8M. This work provides an effective method for using concentrated methanol with no need for major change of the fuel cell configuration.

Experiments on integral length scale control in atmospheric boundary layer wind tunnel

NASA Astrophysics Data System (ADS)

Varshney, Kapil; Poddar, Kamal

2011-11-01

Accurate predictions of turbulent characteristics in the atmospheric boundary layer (ABL) depends on understanding the effects of surface roughness on the spatial distribution of velocity, turbulence intensity, and turbulence length scales. Simulation of the ABL characteristics have been performed in a short test section length wind tunnel to determine the appropriate length scale factor for modeling, which ensures correct aeroelastic behavior of structural models for non-aerodynamic applications. The ABL characteristics have been simulated by using various configurations of passive devices such as vortex generators, air barriers, and slot in the test section floor which was extended into the contraction cone. Mean velocity and velocity fluctuations have been measured using a hot-wire anemometry system. Mean velocity, turbulence intensity, turbulence scale, and power spectral density of velocity fluctuations have been obtained from the experiments for various configuration of the passive devices. It is shown that the integral length scale factor can be controlled using various combinations of the passive devices.

High-Altitude Hydration System

NASA Technical Reports Server (NTRS)

Parazynski, Scott E.; Orndoff, Evelyne; Bue, Grant C.; Schaefbauer, Mark E.; Urban, Kase

2010-01-01

Three methods are being developed for keeping water from freezing during high-altitude climbs so that mountaineers can remain hydrated. Three strategies have been developed. At the time of this reporting two needed to be tested in the field and one was conceptual. The first method is Passive Thermal Control Using Aerogels. This involves mounting the fluid reservoir of the climber s canteen to an inner layer of clothing for better heat retention. For the field test, bottles were mounted to the inner fleece layer of clothing, and then aerogel insulation was placed on the outside of the bottle, and circumferentially around the drink straw. When climbers need to drink, they can pull up the insulated straw from underneath the down suit, take a sip, and then put it back into the relative warmth of the suit. For the field test, a data logger assessed the temperatures of the water reservoir, as well as near the tip of the drink straw. The second method is Passive Thermal Control with Copper-Shielded Drink Straw and Aerogels, also mounted to inner layers of clothing for better heat retention. Braided wire emanates from the inside of the fleece jacket layer, and continues up and around the drink straw in order to use body heat to keep the system-critical drink straw warm enough to keep water in the liquid state. For the field test, a data logger will be used to compare this with the above concept. The third, and still conceptual, method is Active Thermal Control with Microcontroller. If the above methods do not work, microcontrollers and tape heaters have been identified that could keep the drink straw warm even under extremely cold conditions. Power requirements are not yet determined because the thermal environment inside the down suit relative to the external environment has not been established. A data logger will be used to track both the external and internal temperatures of the suit on a summit day.

The Passive Film Growth Mechanism of New Corrosion-Resistant Steel Rebar in Simulated Concrete Pore Solution: Nanometer Structure and Electrochemical Study

PubMed Central

Jiang, Jin-yang; Wang, Danqian; Chu, Hong-yan; Ma, Han; Liu, Yao; Gao, Yun; Shi, Jinjie; Sun, Wei

2017-01-01

An elaborative study was carried out on the growth mechanism and properties of the passive film for a new kind of alloyed corrosion-resistant steel (CR steel). The passive film naturally formed in simulated concrete pore solutions (pH = 13.3). The corrosion resistance was evaluated by various methods including open circuit potential (OCP), linear polarization resistance (LPR) measurements, and electrochemical impedance spectroscopy (EIS). Meanwhile, the 2205 duplex stainless steel (SS steel) was evaluated for comparison. Moreover, the passive film with CR steel was studied by means of X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Atomic Force Microscope (AFM), and the Mott‑Schottky approach. The results showed that the excellent passivity of CR steel could be detected in a high alkaline environment. The grain boundaries between the fine passive film particles lead to increasing Cr oxide content in the later passivation stage. The filling of cation vacancies in the later passivation stage as well as the orderly crystalized inner layer contributed to the excellent corrosion resistance of CR steel. A passive film growth model for CR steel was proposed. PMID:28772772

The Passive Film Growth Mechanism of New Corrosion-Resistant Steel Rebar in Simulated Concrete Pore Solution: Nanometer Structure and Electrochemical Study.

PubMed

Jiang, Jin-Yang; Wang, Danqian; Chu, Hong-Yan; Ma, Han; Liu, Yao; Gao, Yun; Shi, Jinjie; Sun, Wei

2017-04-14

An elaborative study was carried out on the growth mechanism and properties of the passive film for a new kind of alloyed corrosion-resistant steel (CR steel). The passive film naturally formed in simulated concrete pore solutions (pH = 13.3). The corrosion resistance was evaluated by various methods including open circuit potential (OCP), linear polarization resistance (LPR) measurements, and electrochemical impedance spectroscopy (EIS). Meanwhile, the 2205 duplex stainless steel (SS steel) was evaluated for comparison. Moreover, the passive film with CR steel was studied by means of X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Atomic Force Microscope (AFM), and the Mott‑Schottky approach. The results showed that the excellent passivity of CR steel could be detected in a high alkaline environment. The grain boundaries between the fine passive film particles lead to increasing Cr oxide content in the later passivation stage. The filling of cation vacancies in the later passivation stage as well as the orderly crystalized inner layer contributed to the excellent corrosion resistance of CR steel. A passive film growth model for CR steel was proposed.

Estimation of global snow cover using passive microwave data

NASA Astrophysics Data System (ADS)

Chang, Alfred T. C.; Kelly, Richard E.; Foster, James L.; Hall, Dorothy K.

2003-04-01

This paper describes an approach to estimate global snow cover using satellite passive microwave data. Snow cover is detected using the high frequency scattering signal from natural microwave radiation, which is observed by passive microwave instruments. Developed for the retrieval of global snow depth and snow water equivalent using Advanced Microwave Scanning Radiometer EOS (AMSR-E), the algorithm uses passive microwave radiation along with a microwave emission model and a snow grain growth model to estimate snow depth. The microwave emission model is based on the Dense Media Radiative Transfer (DMRT) model that uses the quasi-crystalline approach and sticky particle theory to predict the brightness temperature from a single layered snowpack. The grain growth model is a generic single layer model based on an empirical approach to predict snow grain size evolution with time. Gridding to the 25 km EASE-grid projection, a daily record of Special Sensor Microwave Imager (SSM/I) snow depth estimates was generated for December 2000 to March 2001. The estimates are tested using ground measurements from two continental-scale river catchments (Nelson River and the Ob River in Russia). This regional-scale testing of the algorithm shows that for passive microwave estimates, the average daily snow depth retrieval standard error between estimated and measured snow depths ranges from 0 cm to 40 cm of point observations. Bias characteristics are different for each basin. A fraction of the error is related to uncertainties about the grain growth initialization states and uncertainties about grain size changes through the winter season that directly affect the parameterization of the snow depth estimation in the DMRT model. Also, the algorithm does not include a correction for forest cover and this effect is clearly observed in the retrieval. Finally, error is also related to scale differences between in situ ground measurements and area-integrated satellite estimates. With AMSR-E data, improvements to snow depth and water equivalent estimates are expected since AMSR-E will have twice the spatial resolution of the SSM/I and will be able to characterize better the subnivean snow environment from an expanded range of microwave frequencies.

Metastability of a-SiOx:H thin films for c-Si surface passivation

NASA Astrophysics Data System (ADS)

Serenelli, L.; Martini, L.; Imbimbo, L.; Asquini, R.; Menchini, F.; Izzi, M.; Tucci, M.

2017-01-01

The adoption of a-SiOx:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiNx on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiOx:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Sisbnd H and Sisbnd O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm2. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiOx:H/c-Si/a-SiOx:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiOx passivation properties, was furthermore considered. In particular we monitored the UV light soaking effect on c-Si wafers after a-SiOx:H coating by PECVD and after a thermal annealing treatment at 300 °C for 30 min, having selected these conditions on the basis of the study of the effect due to different temperatures and durations. We correlated the lifetime evolution and the metastability effect of thermal annealing to the a-SiOx:H/c-Si interface considering the evolution of hydrogen in the film revealed by FTIR spectra, and we developed a model for the effect of both treatments on the Sisbnd H bonding and the metastability shown in the lifetime of a-SiOx:H/c-Si/a-SiOx:H structure. We found that, after UV exposure, thermal annealing steps can be used as a tool for the c-Si passivation recovery and enhancement.

Tuning the Reversibility of Mg Anodes via Controlled Surface Passivation by H 2O/Cl – in Organic Electrolytes

DOE PAGES

Connell, Justin G.; Genorio, Bostjan; Lopes, Pietro Papa; ...

2016-10-17

Developing a new generation of battery chemistries is a critical challenge to moving beyond current Li-ion technologies. In this work, we introduce a surface-science-based approach for understanding the complex phenomena controlling the reversibility of Mg anodes for Mg-ion batteries. In addition, we identify the profound impact of trace levels of H 2O (≤3 ppm) on the kinetics of Mg deposition and determine that passive films of MgO and Mg(OH) 2 are formed only after Mg deposition ceases, rather than continuously during Mg reduction. We also find that Cl – inhibits passivation through the formation of adsorbed Cl – (Mg–Cl(ad)) and/ormore » MgCl 2 on the surface, as well as through a dynamic competition with H 2O in the double layer. In conclusion, this surface-science-based approach goes well beyond Mg anodes, highlighting the need for more in-depth understanding of electrolyte chemistries before a new generation of efficient and reversible battery technologies can be realized.« less

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation

NASA Astrophysics Data System (ADS)

Latzel, M.; Büttner, P.; Sarau, G.; Höflich, K.; Heilmann, M.; Chen, W.; Wen, X.; Conibeer, G.; Christiansen, S. H.

2017-02-01

Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the device’s active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 {nm} alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments—chemical etching and alumina deposition—reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation.

PubMed

Latzel, M; Büttner, P; Sarau, G; Höflich, K; Heilmann, M; Chen, W; Wen, X; Conibeer, G; Christiansen, S H

2017-02-03

Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the device's active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 [Formula: see text] alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments-chemical etching and alumina deposition-reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.

Surface soil moisture retrieval using the L-band synthetic aperture radar onboard the Soil Moisture Active Passive satellite and evaluation at core validation sites

USDA-ARS?s Scientific Manuscript database

This paper evaluates the retrieval of soil moisture in the top 5-cm layer at 3-km spatial resolution using L-band dual-copolarized Soil Moisture Active Passive (SMAP) synthetic aperture radar (SAR) data that mapped the globe every three days from mid-April to early July, 2015. Surface soil moisture ...

The Effects of Applied Stress and Sensitization on the Passive Film Stability of Al-Mg Alloys

DTIC Science & Technology

2013-06-01

and residual tensile and compressive stresses impact the passive layer film and the material’s electrochemistry. Sample plates of AA5083 were...electrochemistry. Sample plates of AA5083 were sensitized to different levels to promote the formation of intergranular β phase (Al3Mg2). The...41  A.  MATERIAL PROCESSING: FABRICATION AND APPLIED STRESSES OF TEST SAMPLES

Laminar-flow wind tunnel experiments

NASA Technical Reports Server (NTRS)

Harvey, William D.; Harris, Charles D.; Sewall, William G.; Stack, John P.

1989-01-01

Although most of the laminar flow airfoils recently developed at the NASA Langley Research Center were intended for general aviation applications, low-drag airfoils were designed for transonic speeds and wind tunnel performance tested. The objective was to extend the technology of laminar flow to higher Mach and Reynolds numbers and to swept leading edge wings representative of transport aircraft to achieve lower drag and significantly improved operation costs. This research involves stabilizing the laminar boundary layer through geometric shaping (Natural Laminar Flow, NLF) and active control involving the removal of a portion of the laminar boundary layer (Laminar-Flow Control, LFC), either through discrete slots or perforated surface. Results show that extensive regions of laminar flow with large reductions in skin friction drag can be maintained through the application of passive NLF boundary-layer control technologies to unswept transonic wings. At even greater extent of laminar flow and reduction in the total drag level can be obtained on a swept supercritical airfoil with active boundary layer-control.

Engineering Glass Passivation Layers -Model Results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skorski, Daniel C.; Ryan, Joseph V.; Strachan, Denis M.

2011-08-08

The immobilization of radioactive waste into glass waste forms is a baseline process of nuclear waste management not only in the United States, but worldwide. The rate of radionuclide release from these glasses is a critical measure of the quality of the waste form. Over long-term tests and using extrapolations of ancient analogues, it has been shown that well designed glasses exhibit a dissolution rate that quickly decreases to a slow residual rate for the lifetime of the glass. The mechanistic cause of this decreased corrosion rate is a subject of debate, with one of the major theories suggesting thatmore » the decrease is caused by the formation of corrosion products in such a manner as to present a diffusion barrier on the surface of the glass. Although there is much evidence of this type of mechanism, there has been no attempt to engineer the effect to maximize the passivating qualities of the corrosion products. This study represents the first attempt to engineer the creation of passivating phases on the surface of glasses. Our approach utilizes interactions between the dissolving glass and elements from the disposal environment to create impermeable capping layers. By drawing from other corrosion studies in areas where passivation layers have been successfully engineered to protect the bulk material, we present here a report on mineral phases that are likely have a morphological tendency to encrust the surface of the glass. Our modeling has focused on using the AFCI glass system in a carbonate, sulfate, and phosphate rich environment. We evaluate the minerals predicted to form to determine the likelihood of the formation of a protective layer on the surface of the glass. We have also modeled individual ions in solutions vs. pH and the addition of aluminum and silicon. These results allow us to understand the pH and ion concentration dependence of mineral formation. We have determined that iron minerals are likely to form a complete incrustation layer and we plan to look more closely at Vivianite [Fe3(PO4)2-8(H2O)] and Siderite [FeCO3] in the next stage of the project.« less

Cryogenic Boil-Off Reduction System

NASA Astrophysics Data System (ADS)

Plachta, David W.; Guzik, Monica C.

2014-03-01

A computational model of the cryogenic boil-off reduction system being developed by NASA as part of the Cryogenic Propellant Storage and Transfer technology maturation project has been applied to a range of propellant storage tanks sizes for high-performing in-space cryogenic propulsion applications. This effort focuses on the scaling of multi-layer insulation (MLI), cryocoolers, broad area cooling shields, radiators, solar arrays, and tanks for liquid hydrogen propellant storage tanks ranging from 2 to 10 m in diameter. Component scaling equations were incorporated into the Cryogenic Analysis Tool, a spreadsheet-based tool used to perform system-level parametric studies. The primary addition to the evolution of this updated tool is the integration of a scaling method for reverse turbo-Brayton cycle cryocoolers, as well as the development and inclusion of Self-Supporting Multi-Layer Insulation. Mass, power, and sizing relationships are traded parametrically to establish the appropriate loiter period beyond which this boil-off reduction system application reduces mass. The projected benefit compares passive thermal control to active thermal control, where active thermal control is evaluated for reduced boil-off with a 90 K shield, zero boil-off with a single heat interception stage at the tank wall, and zero boil-off with a second interception stage at a 90 K shield. Parametric studies show a benefit over passive storage at loiter durations under one month, in addition to showing a benefit for two-stage zero boil-off in terms of reducing power and mass as compared to single stage zero boil-off. Furthermore, active cooling reduces the effect of varied multi-layer insulation performance, which, historically, has been shown to be significant.

Snow Microwave Radiative Transfer (SMRT): A new model framework to simulate snow-microwave interactions for active and passive remote sensing applications

NASA Astrophysics Data System (ADS)

Loewe, H.; Picard, G.; Sandells, M. J.; Mätzler, C.; Kontu, A.; Dumont, M.; Maslanka, W.; Morin, S.; Essery, R.; Lemmetyinen, J.; Wiesmann, A.; Floury, N.; Kern, M.

2016-12-01

Forward modeling of snow-microwave interactions is widely used to interpret microwave remote sensing data from active and passive sensors. Though different models are yet available for that purpose, a joint effort has been undertaken in the past two years within the ESA Project "Microstructural origin of electromagnetic signatures in microwave remote sensing of snow". The new Snow Microwave Radiative Transfer (SMRT) model primarily facilitates a flexible treatment of snow microstructure as seen by X-ray tomography and seeks to unite respective advantages of existing models. In its main setting, SMRT considers radiation transfer in a plane-parallel snowpack consisting of homogeneous layers with a layer microstructure represented by an autocorrelation function. The electromagnetic model, which underlies permittivity, absorption and scattering calculations within a layer, is based on the improved Born approximation. The resulting vector-radiative transfer equation in the snowpack is solved using spectral decomposition of the discrete ordinates discretization. SMRT is implemented in Python and employs an object-oriented, modular design which intends to i) provide an intuitive and fail-safe API for basic users ii) enable efficient community developments for extensions (e.g. for improvements of sub-models for microstructure, permittivity, soil or interface reflectivity) from advanced users and iii) encapsulate the numerical core which is maintained by the developers. For cross-validation and inter-model comparison, SMRT implements various ingredients of existing models as selectable options (e.g. Rayleigh or DMRT-QCA phase functions) and shallow wrappers to invoke legacy model code directly (MEMLS, DMRT-QMS, HUT). In this paper we give an overview of the model components and show examples and results from different validation schemes.

Engineered Multifunctional Surfaces for Fluid Handling

NASA Technical Reports Server (NTRS)

Thomas, Chris; Ma, Yonghui; Weislogel, Mark

2012-01-01

Designs incorporating variations in capillary geometry and hydrophilic and/or antibacterial surface properties have been developed that are capable of passive gas/liquid separation and passive water flow. These designs can incorporate capillary grooves and/or surfaces arranged to create linear and circumferential capillary geometry at the micro and macro scale, radial fin configurations, micro holes and patterns, and combinations of the above. The antibacterial property of this design inhibits the growth of bacteria or the development of biofilm. The hydrophilic property reduces the water contact angle with a treated substrate such that water spreads into a thin layer atop the treated surface. These antibacterial and hydrophilic properties applied to a thermally conductive surface, combined with capillary geometry, create a novel heat exchanger capable of condensing water from a humid, two-phase water and gas flow onto the treated heat exchanger surfaces, and passively separating the condensed water from the gas flow in a reduced gravity application. The overall process to generate the antibacterial and hydrophilic properties includes multiple steps to generate the two different surface properties, and can be divided into two major steps. Step 1 uses a magnetron-based sputtering technique to implant the silver atoms into the base material. A layer of silver is built up on top of the base material. Completion of this step provides the antibacterial property. Step 2 uses a cold-plasma technique to generate the hydrophilic surface property on top of the silver layer generated in Step 1. Completion of this step provides the hydrophilic property in addition to the antibacterial property. Thermally conductive materials are fabricated and then treated to create the antibacterial and hydrophilic surface properties. The individual parts are assembled to create a condensing heat exchanger with antibacterial and hydrophilic surface properties and capillary geometry, which is capable of passive phase separation in a reduced gravity application. The plasma processes for creating antibacterial and hydrophilic surface properties are suitable for applications where water is present on an exposed surface for an extended time, such that bacteria or biofilms could form, and where there is a need to manage the water on the surface. The processes are also suitable for applications where only the hydrophilic property is needed. In particular, the processes are applicable to condensing heat exchangers (CHXs), which benefit from the antibacterial properties as well as the hydrophilic properties. Water condensing onto the control surfaces of the CHX will provide the moist conditions necessary for the growth of bacteria and the formation of biofilms. The antibacterial properties of the base layer (silver) will mitigate and prevent the growth of bacteria and formation of biofilms that would otherwise reduce the CHX performance. In addition, the hydrophilic properties reduce the water contact angle and prevent water droplets from bridging between control surfaces. Overall, the hydrophilic properties reduce the pressure drop across the CHX.

Improvement of Depth Profiling into Biotissues Using Micro Electrical Impedance Spectroscopy on a Needle with Selective Passivation

PubMed Central

Yun, Joho; Kim, Hyeon Woo; Lee, Jong-Hyun

2016-01-01

A micro electrical impedance spectroscopy (EIS)-on-a-needle for depth profiling (μEoN-DP) with a selective passivation layer (SPL) on a hypodermic needle was recently fabricated to measure the electrical impedance of biotissues along with the penetration depths. The SPL of the μEoN-DP enabled the sensing interdigitated electrodes (IDEs) to contribute predominantly to the measurement by reducing the relative influence of the connection lines on the sensor output. The discrimination capability of the μEoN-DP was verified using phosphate-buffered saline (PBS) at various concentration levels. The resistance and capacitance extracted through curve fitting were similar to those theoretically estimated based on the mixing ratio of PBS and deionized water; the maximum discrepancies were 8.02% and 1.85%, respectively. Depth profiling was conducted using four-layered porcine tissue to verify the effectiveness of the discrimination capability of the μEoN-DP. The magnitude and phase between dissimilar porcine tissues (fat and muscle) were clearly discriminated at the optimal frequency of 1 MHz. Two kinds of simulations, one with SPL and the other with complete passivation layer (CPL), were performed, and it was verified that the SPL was advantageous over CPL in the discrimination of biotissues in terms of sensor output. PMID:28009845

Improvement of Depth Profiling into Biotissues Using Micro Electrical Impedance Spectroscopy on a Needle with Selective Passivation.

PubMed

Yun, Joho; Kim, Hyeon Woo; Lee, Jong-Hyun

2016-12-21

A micro electrical impedance spectroscopy (EIS)-on-a-needle for depth profiling (μEoN-DP) with a selective passivation layer (SPL) on a hypodermic needle was recently fabricated to measure the electrical impedance of biotissues along with the penetration depths. The SPL of the μEoN-DP enabled the sensing interdigitated electrodes (IDEs) to contribute predominantly to the measurement by reducing the relative influence of the connection lines on the sensor output. The discrimination capability of the μEoN-DP was verified using phosphate-buffered saline (PBS) at various concentration levels. The resistance and capacitance extracted through curve fitting were similar to those theoretically estimated based on the mixing ratio of PBS and deionized water; the maximum discrepancies were 8.02% and 1.85%, respectively. Depth profiling was conducted using four-layered porcine tissue to verify the effectiveness of the discrimination capability of the μEoN-DP. The magnitude and phase between dissimilar porcine tissues (fat and muscle) were clearly discriminated at the optimal frequency of 1 MHz. Two kinds of simulations, one with SPL and the other with complete passivation layer (CPL), were performed, and it was verified that the SPL was advantageous over CPL in the discrimination of biotissues in terms of sensor output.

Modeling uptake of hydrophobic organic contaminants into polyethylene passive samplers.

PubMed

Thompson, Jay M; Hsieh, Ching-Hong; Luthy, Richard G

2015-02-17

Single-phase passive samplers are gaining acceptance as a method to measure hydrophobic organic contaminant (HOC) concentration in water. Although the relationship between the HOC concentration in water and passive sampler is linear at equilibrium, mass transfer models are needed for nonequilibrium conditions. We report measurements of organochlorine pesticide diffusion and partition coefficients with respect to polyethylene (PE), and present a Fickian approach to modeling HOC uptake by PE in aqueous systems. The model is an analytic solution to Fick's second law applied through an aqueous diffusive boundary layer and a polyethylene layer. Comparisons of the model with existing methods indicate agreement at appropriate boundary conditions. Laboratory release experiments on the organochlorine pesticides DDT, DDE, DDD, and chlordane in well-mixed slurries support the model's applicability to aqueous systems. In general, the advantage of the model is its application in the cases of well-agitated systems, low values of polyethylene-water partioning coefficients, thick polyethylene relative to the boundary layer thickness, and/or short exposure times. Another significant advantage is the ability to estimate, or at least bound, the needed exposure time to reach a desired CPE without empirical model inputs. A further finding of this work is that polyethylene diffusivity does not vary by transport direction through the sampler thickness.

Flutter suppression of plates using passive constrained viscoelastic layers

NASA Astrophysics Data System (ADS)

Cunha-Filho, A. G.; de Lima, A. M. G.; Donadon, M. V.; Leão, L. S.

2016-10-01

Flutter in aeronautical panels is a self-excited aeroelastic phenomenon which occurs during supersonic flights due to dynamic instability of inertia, elastic and aerodynamic forces of the system. In the flutter condition, when the critical aerodynamic pressure is reached, the vibration amplitudes of the panel become dynamically unstable and increase exponentially with time, significantly affecting the fatigue life of the existing aeronautical components. Thus, in this paper, the interest is to investigate the possibility reducing the effects of the supersonic aeroelastic instability of rectangular plates by applying passive constrained viscoelastic layers. The rationale for such study is the fact that as the addition of viscoelastic materials provides decreased vibration amplitudes it becomes important to quantify the suppression of plate flutter coalescence modes that can be obtained. Moreover, despite the fact that much research on the suppression of panel flutter has been carried out by using passive, semi-active and active control techniques, few works have been proposed to deal with the problem of predicting the flutter boundary of aeroviscoelastic systems, since they must conveniently account for the frequency- and temperature-dependent behavior of the viscoelastic material. After the presentation of the theoretical foundations of the methodology, the description of a numerical study on the flutter analysis of a three-layer sandwich plate is addressed.

Minimizing Polysulfide Shuttle Effect in Lithium-Ion Sulfur Batteries by Anode Surface Passivation.

PubMed

Liu, Jian; Lu, Dongping; Zheng, Jianming; Yan, Pengfei; Wang, Biqiong; Sun, Xueliang; Shao, Yuyan; Wang, Chongmin; Xiao, Jie; Zhang, Ji-Guang; Liu, Jun

2018-06-25

Lithium-ion sulfur batteries use nonlithium materials as the anode for extended cycle life. However, polysulfide shuttle reactions still occur on the nonmetal anodes (such as graphite and Si), and result in undesirable low Coulombic efficiency. In this work, we used Al 2 O 3 layers coated by atomic layer deposition (ALD) technique to suppress the shuttle reactions. With the optimal thickness of 2 nm Al 2 O 3 coated on graphite anode, the Coulombic efficiency of the sulfur cathode was improved from 84% to 96% in the first cycle, and from 94% to 97% in the subsequent cycles. As a result, the discharge capacity of the sulfur cathode was increased to 550 mAh g -1 in the 100th cycle, as compared with 440 mAh g -1 when the pristine graphite anode was used. The Al 2 O 3 passivation layer minimizes the formation of insoluble sulfide (Li 2 S 2 , Li 2 S) on the surface of graphite anode and improves the efficiency and capacity retention of the graphite-sulfur batteries. The surface passivation strategy could also be used in other sulfur based battery systems (with Li, Si, and Sn anodes), to minimize side reactions and enable high-performance sulfur batteries.

Slow positron studies of hydrogen activation/passivation on SiO2/Si(100) interfaces

NASA Astrophysics Data System (ADS)

Lynn, K. G.; Asoka-Kumar, P.

The hydrogen atoms are one of the most common impurity species found in semiconductor systems owing to its large diffusivity, and are easily incorporated either in a controlled process like in ion implantation or in an uncontrolled process like the one at the fabrication stage. Hydrogen can passivate dangling bonds and dislocations in these systems and hence can be used to enhance the electrical properties. In a SiO2/Si system, hydrogen can passivate electronic states at the interface and can alter the fixed or mobile charges in the oxide layer. Since hydrogen is present in almost all of the environments of SiO2/Si wafer fabrication, the activation energy of hydrogen atoms is of paramount importance to a proper understanding of SiO2/Si based devices and has not been measured on the technologically most important Si(100) face. There are no direct, nondestructive methods available to observe hydrogen injection into the oxide layer and subsequent diffusion. The positrons are used as a 'sensitive', nondestructive probe to observe hydrogen interaction in the oxide layer and the interface region. A new way is described of characterizing the changes in the density of the interface states under a low temperature annealing using positrons.

Effect of substrate roughness on the corrosion behaviour of the Al2O3/MA 956 system.

PubMed

García-Alonso, M C; Escudero, M L; González-Carrasco, J L; Chao, J

2000-01-01

This paper presents the influence of substrate roughness on the corrosion behaviour of the Al2O3/MA 956 system. An alumina layer of thickness 1-5 microm was generated of the MA956 alloy by thermal oxidation at 1100 degrees C using different exposure times. This Al2O3/MA 956 system with a polished substrate has shown excellent corrosion behaviour in a physiological fluid, due to the fact that the alpha-Al2O3 layer formed is dense, continuous and firmly adhered to the substrate, irrespective of the scale thickness. This good adherence allows it to withstand potentials above 1.7 V. Specimens with rough finish substrate and treatment times above 10 h present spallation of the alumina layer at the crests of the roughness profile. In this case a mixed corrosion behaviour between an alumina coated material and one with a passive layer is observed. In both types of specimens, rough and smooth, once the passivation layer is broken the repassivation capacity of the substrate is ensured due to the high chromium content of the alloy, under oxygenation conditions.

Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Huard, Chad M.; Lanham, Steven J.; Kushner, Mark J.

2018-04-01

Atomic layer etching (ALE) typically divides the etching process into two self-limited reactions. One reaction passivates a single layer of material while the second preferentially removes the passivated layer. As such, under ideal conditions the wafer scale uniformity of ALE should be independent of the uniformity of the reactant fluxes onto the wafers, provided all surface reactions are saturated. The passivation and etch steps should individually asymptotically saturate after a characteristic fluence of reactants has been delivered to each site. In this paper, results from a computational investigation are discussed regarding the uniformity of ALE of Si in Cl2 containing inductively coupled plasmas when the reactant fluxes are both non-uniform and non-ideal. In the parameter space investigated for inductively coupled plasmas, the local etch rate for continuous processing was proportional to the ion flux. When operated with saturated conditions (that is, both ALE steps are allowed to self-terminate), the ALE process is less sensitive to non-uniformities in the incoming ion flux than continuous etching. Operating ALE in a sub-saturation regime resulted in less uniform etching. It was also found that ALE processing with saturated steps requires a larger total ion fluence than continuous etching to achieve the same etch depth. This condition may result in increased resist erosion and/or damage to stopping layers using ALE. While these results demonstrate that ALE provides increased etch depth uniformity, they do not show an improved critical dimension uniformity in all cases. These possible limitations to ALE processing, as well as increased processing time, will be part of the process optimization that includes the benefits of atomic resolution and improved uniformity.

Chemical-mechanical planarization of aluminum and copper interconnects with magnetic liners

NASA Astrophysics Data System (ADS)

Wang, Bin

2000-10-01

Chemical Mechanical Planarization (CMP) has been employed to achieve Damascene patterning of aluminum and copper interconnects with unique magnetic liners. A one-step process was developed for each interconnect scheme, using a double-layered pad with mesh cells, pores, and perforations on a top hard layer. In a hydrogen peroxide-based slurry, aluminum CMP was a process of periodic removal and formation of a surface oxide layer. Cu CMP in the same slurry, however, was found to be a dissolution dominant process. In a potassium iodate-based slurry, copper removal was the result of two competing reactions: copper dissolution and a non-native surface layer formation. Guided by electrochemistry, slurries were developed to remove nickel in different regimes of the corrosion kinetics diagram. Nickel CMP in a ferric sulfate-based slurry resulted in periodic removal and formation of a passive surface layer. In a potassium permanganate-based slurry, nickel removal is a dissolution dominant process. Visible Al(Cu) surface damages obtained with copper-doped aluminum could be eliminated by understanding the interactions between the substrate, the pad, and the abrasive agglomerate. Increasing substrate hardness by annealing prior to CMP led to a surface finish free of visible scratches. A similar result was also obtained by preventing formation of abrasive agglomerates and minimizing their contact with the substrate.

Numerical experiments of volcanic dominated rifts and passive margins

NASA Astrophysics Data System (ADS)

Korchinski, Megan; Teyssier, Christian; Rey, Patrice; Whitney, Donna; Mondy, Luke

2017-04-01

Continental rifting is driven by plate tectonic forces (passive rifting), thermal thinning of the lithosphere over a hotspot (active rifting), or a combination of the two. Successful rifts develop into passive margins where pre-drift stretching is accompanied by normal faulting, clastic sedimentation, and various degrees of magmatism. The structure of volcanic passive margins (VPM) differs substantially from margins that are dominated by sedimentation. VPMs are typically narrow, with a lower continental crust that is intruded by magma and can flow as a low-viscosity layer. To investigate the role of the deep crust in the early development of VPMs, we have developed a suite of 2D thermomechanical numerical experiments (Underworld code) in which the density and viscosity of the deep crust and the density of the rift basin fill are systematically varied. Our experiments show that, for a given rifting velocity, the viscosity of the deep crust and the density of the rift basin fill exert primary controls on early VPM development. The viscosity of the deep crust controls the degree to which the shallow crust undergoes localised faulting or distributed thinning. A weak deep crust localises rifting and is efficiently exhumed to the near-surface, whereas a strong deep crust distributes shallow crust extension and remains buried. A high density rift basin fill results in gravitational loading and increased subsidence rate in cases in which the viscosity of the deep crust is sufficiently low to allow that layer to be displaced by the sinking basin fill. At the limit, a low viscosity deep crust overlain by a thick basalt-dominated fill generates a gravitational instability, with a drip of cool basalt that sinks and ponds at the Moho. Experiment results indicate that the deep crust plays a critical role in the dynamic development of volcanic dominated rifts and passive margins. During rifting, the deep continental crust is heated and readily responds to solicitations of the shallow crust (rooting of normal faults, exhumation of the deep crust in normal fault footwalls). Gravitational instabilities caused by high density rift infill similar to those observed in our numerical experiments may be present in the Mesoproterozoic ( 1100 Ma) North American Midcontinent Rift System (MRS). The MRS is a failed rift that is filled with >20 km of dominantly basaltic volcanic deposits, and therefore represents an end member VPM (high density basin fill) where the initial structure of a pre-drift VPM is preserved. Magmatism occurred in two pulses over <15 Ma involving deep mantle melting first (>150 km), then shallow melting (40-70 km). Post-rift subsidence accumulated up to 10 km of clastic sediments in the center of the basin. Evidence of cool, dense rocks sinking into a low-viscosity deep crust as predicted in our numerical experiments may be present in the western arm of the MRS, where crustal density analyses suggest the presence of dense bodies (eclogite) at the base of the crust.

Surface characteristics, corrosion and bioactivity of chemically treated biomedical grade NiTi alloy.

PubMed

Chembath, Manju; Balaraju, J N; Sujata, M

2015-11-01

The surface of NiTi alloy was chemically modified using acidified ferric chloride solution and the characteristics of the alloy surface were studied from the view point of application as a bioimplant. Chemically treated NiTi was also subjected to post treatments by annealing at 400°C and passivation in nitric acid. The surface of NiTi alloy after chemical treatment developed a nanogrid structure with a combination of one dimensional channel and two dimensional network-like patterns. From SEM studies, it was found that the undulations formed after chemical treatment remained unaffected after annealing, while after passivation process the undulated surface was filled with oxides of titanium. XPS analysis revealed that the surface of passivated sample was enriched with oxides of titanium, predominantly TiO2. The influence of post treatment on the corrosion resistance of chemically treated NiTi alloy was monitored using Potentiodynamic Polarization and Electrochemical Impedance Spectroscopy (EIS) in Phosphate Buffered Saline (PBS) solution. In the chemically treated condition, NiTi alloy exhibited poor corrosion resistance due to the instability of the surface. On the other hand, the breakdown potential (0.8V) obtained was highest for the passivated samples compared to other surface treated samples. During anodic polarization, chemically treated samples displayed dissolution phenomenon which was predominantly activation controlled. But after annealing and passivation processes, the behavior of anodic polarization was typical of a diffusion controlled process which confirmed the enhanced passivity of the post treated surfaces. The total resistance, including the porous and barrier layer, was in the range of mega ohms for passivated surfaces, which could be attributed to the decrease in surface nickel content and formation of compact titanium oxide. The passivated sample displayed good bioactivity in terms of hydroxyapatite growth, noticed after 14days immersion in Hanks' solution. Copyright © 2015 Elsevier B.V. All rights reserved.

Antireflection and SiO2 Surface Passivation by Liquid-Phase Chemistry for Efficient Black Silicon Solar Cells: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuan, H. C.; Oh, J.; Zhang, Y.

2012-06-01

We report solar cells with both black Si antireflection and SiO2 surface passivation provided by inexpensive liquid-phase chemistry, rather than by conventional vacuum-based techniques. Preliminary cell efficiency has reached 16.4%. Nanoporous black Si antireflection on crystalline Si by aqueous etching promises low surface reflection for high photon utilization, together with lower manufacturing cost compared to vacuum-based antireflection coating. Ag-nanoparticle-assisted black Si etching and post-etching chemical treatment recently developed at NREL enables excellent control over the pore diameter and pore separation. Performance of black Si solar cells, including open-circuit voltage, short-circuit current density, and blue response, has benefited from these improvements.more » Prior to this study, our black Si solar cells were all passivated by thermal SiO2 produced in tube furnaces. Although this passivation is effective, it is not yet ideal for ultra-low-cost manufacturing. In this study, we report, for the first time, the integration of black Si with a proprietary liquid-phase deposition (LPD) passivation from Natcore Technology. The Natcore LPD forms a layer of <10-nm SiO2 on top of the black Si surface in a relatively mild chemical bath at room temperature. We demonstrate black Si solar cells with LPD SiO2 with a spectrum-weighted average reflection lower than 5%, similar to the more costly thermally grown SiO2 approach. However, LPD SiO2 provides somewhat better surface-passivation quality according to the lifetime analysis by the photo-conductivity decay measurement. Moreover, black Si solar cells with LPD SiO2 passivation exhibit higher spectral response at short wavelength compared to those passivated by thermally grown SiO2. With further optimization, the combination of aqueous black Si etching and LPD could provide a pathway for low-cost, high-efficiency crystalline Si solar cells.« less

Control of Stationary Cross-Flow Modes in a Mach 3.5 Boundary Layer Using Patterned Passive and Active Roughness

NASA Technical Reports Server (NTRS)

Schuele, Chan Yong

2011-01-01

Spanwise-periodic roughness designed to excite selected wavelengths of stationary cross- ow modes was investigated in a 3-D boundary layer at Mach 3.5. The test model was a sharp-tipped 14deg right-circular cone. The model and integrated sensor traversing system were placed in the Mach 3.5 Supersonic Low Disturbance Tunnel (SLDT) equipped with a "quiet design" nozzle at the NASA Langley Research Center. The model was oriented at a 4:2deg angle of attack to produce a mean cross-fl ow velocity component in the boundary layer over the cone. Five removable cone tips have been investigated. One has a smooth surface that is used to document the baseline ("natural") conditions. Two had minute (20 - 40 micron) "dimples" that are equally spaced around the circumference, at a streamwise location that is just upstream of the linear stability neutral growth branch for cross- ow modes. The azimuthal mode numbers of the dimpled tips were selected to either enhance the most amplified wave numbers, or to suppress the growth of the most amplified wave numbers. Two of the cone tips had an array of plasma streamwise vortex generators that were designed to simulate the disturbances produced by the passive patterned roughness. The results indicate that the stationary cross-fl ow modes were highly receptive to the patterned roughness of both passive and active types. The patterned passive roughness that was designed to suppress the growth of the most amplified modes had an azimuthal wavelength that was 66% smaller that that of the most amplified stationary cross- ow mode. This had the effect to increase the transition Reynolds number from 25% to 50% depending on the measurement technique. The application of the research is on turbulent transition control on swept wings of supersonic aircraft. The plasma-based roughness has the advantage over the passive roughness of being able to be adaptable to different conditions that would occur during a flight mission.

Evaluation of stress stabilities in amorphous In-Ga-Zn-O thin-film transistors: Effect of passivation with Si-based resin

NASA Astrophysics Data System (ADS)

Ochi, Mototaka; Hino, Aya; Goto, Hiroshi; Hayashi, Kazushi; Fujii, Mami N.; Uraoka, Yukiharu; Kugimiya, Toshihiro

2018-02-01

Fabrication process conditions of a passivation (PV) layer correlated with stress stabilities of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). In etch-stop layer (ESL)-TFTs, by inserting a Si-based resin between SiN x and SiO x PV layers, the peak intensity in the photoinduced transient spectroscopy (PITS) spectrum was notably reduced. This suggested the suppression of hydrogen incorporation into a-IGZO, which led to the improvement of stability under negative bias thermal illumination stress (NBTIS). In contrast, the hydrogen-related defects in the a-IGZO were easily formed by the back-channel etch (BCE) process. Furthermore, it was found that, under NBTIS, the transfer curves of the BCE-TFTs shifted in parallel owing to the positive fixed charge located in the back channel of the a-IGZO TFTs. The hump-shaped shift increased with stress time. This is because hydrogen atoms located at the back-channel surfaces of the a-IGZO and/or PV layers were incorporated into the channel region of the BCE-TFTs and induced the hydrogen-related defects.

Enhanced Carrier Collection from CdS Passivated Grains in Solution-Processed Cu2ZnSn(S,Se)4 Solar Cells.

PubMed

Werner, Melanie; Keller, Debora; Haass, Stefan G; Gretener, Christina; Bissig, Benjamin; Fuchs, Peter; La Mattina, Fabio; Erni, Rolf; Romanyuk, Yaroslav E; Tiwari, Ayodhya N

2015-06-10

Solution processing of Cu2ZnSn(S,Se)4 (CZTSSe)-kesterite solar cells is attractive because of easy manufacturing using readily available metal salts. The solution-processed CZTSSe absorbers, however, often suffer from poor morphology with a bilayer structure, exhibiting a dense top crust and a porous bottom layer, albeit yielding efficiencies of over 10%. To understand whether the cell performance is limited by this porous layer, a systematic compositional study using (scanning) transmission electron microscopy ((S)TEM) and energy-dispersive X-ray spectroscopy of the dimethyl sulfoxide processed CZTSSe absorbers is presented. TEM investigation revealed a thin layer of CdS that is formed around the small CZTSSe grains in the porous bottom layer during the chemical bath deposition step. This CdS passivation is found to be beneficial for the cell performance as it increases the carrier collection and facilitates the electron transport. Electron-beam-induced current measurements reveal an enhanced carrier collection for this buried region as compared to reference cells with evaporated CdS.

Improvement in performance and reliability with CF4 plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistor

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yi-Yan; Yang, Chun-Chieh

2012-03-01

This study applies CF4 plasma pretreatment to a buffer oxide layer to improve the performance of low-temperature polysilicon thin-film transistors (LTPS TFTs). Results show that the fluorine atoms piled up at the interface between the bulk channel and buffer oxide layer and accumulated in the bulk channel. The reduction of the trap states density by fluorine passivation can improve the electrical characteristics of the LTPS TFTs. It is found that the threshold voltage reduced from 4.32 to 3.03 V and the field-effect mobility increased from 29.71 to 45.65 cm2 V-1 S-1. In addition, the on current degradation and threshold voltage shift after stressing were significantly improved about 31% and 70%, respectively. We believe that the proposed CF4 plasma pretreatment on the buffer oxide layer can passivate the trap states and avoid the plasma induced damage on the polysilicon channel surface, resulting in the improvement in performance and reliability for LTPS-TFT mass production application on AMOLED displays with critical reliability requirement.

Mechanical and histological characterization of the abdominal muscle. A previous step to modelling hernia surgery.

PubMed

Hernández, B; Peña, E; Pascual, G; Rodríguez, M; Calvo, B; Doblaré, M; Bellón, J M

2011-04-01

The aims of this study are to experimentally characterize the passive elastic behaviour of the rabbit abdominal wall and to develop a mechanical constitutive law which accurately reproduces the obtained experimental results. For this purpose, tissue samples from New Zealand White rabbits 2150±50 (g) were mechanically tested in vitro. Mechanical tests, consisting of uniaxial loading on tissue samples oriented along the craneo-caudal and the perpendicular directions, respectively, revealed the anisotropic non-linear mechanical behaviour of the abdominal tissues. Experiments were performed considering the composite muscle (including external oblique-EO, internal oblique-IO and transverse abdominis-TA muscle layers), as well as separated muscle layers (i.e., external oblique, and the bilayer formed by internal oblique and transverse abdominis). Both the EO muscle layer and the IO-TA bilayer demonstrated a stiffer behaviour along the transversal direction to muscle fibres than along the longitudinal one. The fibre arrangement was measured by means of a histological study which confirmed that collagen fibres are mainly responsible for the passive mechanical strength and stiffness. Furthermore, the degree of anisotropy of the abdominal composite muscle turned out to be less pronounced than those obtained while studying the EO and IO-TA separately. Moreover, a phenomenological constitutive law was used to capture the measured experimental curves. A Levenberg-Marquardt optimization algorithm was used to fit the model constants to reproduce the experimental curves. Copyright © 2010 Elsevier Ltd. All rights reserved.

Contrast-enhancement in organic light-emitting diodes.

PubMed

Wu, Zhaoxin; Wang, Liduo; Qiu, Yong

2005-03-07

A high-contrast organic light-emitting diode (OLED) structure is presented. Because of poor contrast of conventional OLED resulting from high reflective metal cathode, the hybrid cathode structure was developed for low reflectivity. It consists the semitransparent cathode layers, passivation layers and a thick light-absorbing film. By optical reflectivity measurement and OLED electrical characterization tests for both OLED with the hybrid cathode and conventional OLED, it was found that the spectrum reflectance of OLED with hybrid cathode is among 8%-12%, about eight times lower than the conventional one when the two types of devices have similar turn-on voltages and current-voltage characteristics. The hybrid cathode for the high-contrast OLED is easily fabricated and its optical reflectance is slightly dependent on wavelength.

Distributed structural control using multilayered piezoelectric actuators

NASA Technical Reports Server (NTRS)

Cudney, Harley H.; Inman, Daniel J.; Oshman, Yaakov

1990-01-01

A method of segmenting piezoelectric sensors and actuators is proposed which can preclude the currently experienced cancelation of sensor signals, or the reduction of actuator effectiveness, due to the integration of the property undergoing measurement or control. The segmentation method is demonstrated by a model developed for beam structures, to which multiple layers of piezoelectric materials are attached. A numerical study is undertaken of increasing active and passive damping of a beam using the segmented sensors and actuators over unsegmented sensors and actuators.

CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

NASA Astrophysics Data System (ADS)

Swanson, Drew E.; Reich, Carey; Abbas, Ali; Shimpi, Tushar; Liu, Hanxiao; Ponce, Fernando A.; Walls, John M.; Zhang, Yong-Hang; Metzger, Wyatt K.; Sampath, W. S.; Holman, Zachary C.

2018-05-01

As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extending Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.

Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, Baochen, E-mail: liaobaochen@nus.edu.sg; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576; A*STAR Institute of Materials Research and Engineering

2014-06-23

In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiO{sub x}) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiO{sub x} films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiO{sub x} films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is foundmore » to be stable after storage in the dark for eight months. These results demonstrate that TiO{sub x} films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiO{sub x} has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiO{sub x} in the field of high-efficiency silicon wafer solar cells.« less

Modeling the transport of organic chemicals between polyethylene passive samplers and water in finite and infinite bath conditions.

PubMed

Tcaciuc, A Patricia; Apell, Jennifer N; Gschwend, Philip M

2015-12-01

Understanding the transfer of chemicals between passive samplers and water is essential for their use as monitoring devices of organic contaminants in surface waters. By applying Fick's second law to diffusion through the polymer and an aqueous boundary layer, the authors derived a mathematical model for the uptake of chemicals into a passive sampler from water, in finite and infinite bath conditions. The finite bath model performed well when applied to laboratory observations of sorption into polyethylene (PE) sheets for various chemicals (polycyclic aromatic hydrocarbons, polychlorinated biphenyls [PCBs], and dichlorodiphenyltrichloroethane [DDT]) and at varying turbulence levels. The authors used the infinite bath model to infer fractional equilibration of PCB and DDT analytes in field-deployed PE, and the results were nearly identical to those obtained using the sampling rate model. However, further comparison of the model and the sampling rate model revealed that the exchange of chemicals was inconsistent with the sampling rate model for partially or fully membrane-controlled transfer, which would be expected in turbulent conditions or when targeting compounds with small polymer diffusivities and small partition coefficients (e.g., phenols, some pesticides, and others). The model can be applied to other polymers besides PE as well as other chemicals and in any transfer regime (membrane, mixed, or water boundary layer-controlled). Lastly, the authors illustrate practical applications of this model such as improving passive sampler design and understanding the kinetics of passive dosing experiments. © 2015 SETAC.

Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

PubMed

Jia, Endong; Zhou, Chunlan; Wang, Wenjing

2015-01-01

Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

Investigation of passive films on nickel Alloy 690 in lead-containing environments

NASA Astrophysics Data System (ADS)

Peng, B.; Lu, B. T.; Luo, J. L.; Lu, Y. C.; Ma, H. Y.

2008-09-01

Passive films formed on Alloy UNS N06690 were investigated in simulated crevice chemistries. It was found the role of lead in corrosion processes is strongly dependent on the pH value of the testing solutions. At pH 1.5 the effect of lead is narrowly noticeable; while at pH 12.7, lead has a significant influence on the electrochemical performance of alloy UNS N06690. The lead alters the surface morphologies at both pH and account for higher hydroxide content in the surface film at pH 12.7. The lead incorporation hinders the formation of spinel oxides during the passivation in alkaline solution. Nanoindentation tests indicate a significant lead-induced degradation in the mechanical properties of passive films. The passivation degradation is attributed to detrimental effects of lead via interrupting the dehydration process and hindering the formation of protective layers on the alloy surface.

Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers

NASA Astrophysics Data System (ADS)

Kiran, Rajni; Mallick, Shubhrangshu; Hahn, Suk-Ryong; Lee, T. S.; Sivananthan, Sivalingam; Ghosh, Siddhartha; Wijewarnasuriya, P. S.

2006-06-01

The effects of passivation with two different passivants, ZnS and CdTe, and two different passivation techniques, physical vapor deposition (PVD) and molecular beam epitaxy (MBE), were quantified in terms of the minority carrier lifetime and extracted surface recombination velocity on both MBE-grown medium-wavelength ir (MWIR) and long-wavelength ir HgCdTe samples. A gradual increment of the minority carrier lifetime was reported as the passivation technique was changed from PVD ZnS to PVD CdTe, and finally to MBE CdTe, especially at low temperatures. A corresponding reduction in the extracted surface recombination velocity in the same order was also reported for the first time. Initial data on the 1/ f noise values of as-grown MWIR samples showed a reduction of two orders of noise power after 1200-Å ZnS deposition.

Rain-on-snow and ice layer formation detection using passive microwave radiometry: An arctic perspective

NASA Astrophysics Data System (ADS)

Langlois, A.; Royer, A.; Montpetit, B.; Johnson, C. A.; Brucker, L.; Dolant, C.; Richards, A.; Roy, A.

2015-12-01

With the current changes observed in the Arctic, an increase in occurrence of rain-on-snow (ROS) events has been reported in the Arctic (land) over the past few decades. Several studies have established that strong linkages between surface temperatures and passive microwaves do exist, but the contribution of snow properties under winter extreme events such as rain-on-snow events (ROS) and associated ice layer formation need to be better understood that both have a significant impact on ecosystem processes. In particular, ice layer formation is known to affect the survival of ungulates by blocking their access to food. Given the current pronounced warming in northern regions, more frequent ROS can be expected. However, one of the main challenges in the study of ROS in northern regions is the lack of meteorological information and in-situ measurements. The retrieval of ROS occurrence in the Arctic using satellite remote sensing tools thus represents the most viable approach. Here, we present here results from 1) ROS occurrence formation in the Peary caribou habitat using an empirically developed ROS algorithm by our group based on the gradient ratio, 2) ice layer formation across the same area using a semi-empirical detection approach based on the polarization ratio spanning between 1978 and 2013. A detection threshold was adjusted given the platform used (SMMR, SSM/I and AMSR-E), and initial results suggest high-occurrence years as: 1981-1982, 1992-1993; 1994-1995; 1999-2000; 2001-2002; 2002-2003; 2003-2004; 2006-2007; 2007-2008. A trend in occurrence for Banks Island and NW Victoria Island and linkages to caribou population is presented.

Using Passive and Active Acoustics to Examine Relationships of Cetacean and Prey Densities

DTIC Science & Technology

2015-09-30

modulation or production to the marine soundscape with daily, lunar, and seasonal patterns. We aim to document how presence and intensity of certain...sounds relate to spatio-temporal variability of active acoustic backscatter strength. Additionally, several marine mammal species are predators of deep...scattering layer (DSL) species as well as krill. We intend to investigate if passive acoustic marine mammal detections are related to increased

Warming up human body by nanoporous metallized polyethylene textile.

PubMed

Cai, Lili; Song, Alex Y; Wu, Peilin; Hsu, Po-Chun; Peng, Yucan; Chen, Jun; Liu, Chong; Catrysse, Peter B; Liu, Yayuan; Yang, Ankun; Zhou, Chenxing; Zhou, Chenyu; Fan, Shanhui; Cui, Yi

2017-09-19

Space heating accounts for the largest energy end-use of buildings that imposes significant burden on the society. The energy wasted for heating the empty space of the entire building can be saved by passively heating the immediate environment around the human body. Here, we demonstrate a nanophotonic structure textile with tailored infrared (IR) property for passive personal heating using nanoporous metallized polyethylene. By constructing an IR-reflective layer on an IR-transparent layer with embedded nanopores, the nanoporous metallized polyethylene textile achieves a minimal IR emissivity (10.1%) on the outer surface that effectively suppresses heat radiation loss without sacrificing wearing comfort. This enables 7.1 °C decrease of the set-point compared to normal textile, greatly outperforming other radiative heating textiles by more than 3 °C. This large set-point expansion can save more than 35% of building heating energy in a cost-effective way, and ultimately contribute to the relief of global energy and climate issues.Energy wasted for heating the empty space of the entire building can be saved by passively heating the immediate environment around the human body. Here, the authors show a nanophotonic structure textile with tailored infrared property for passive personal heating using nanoporous metallized polyethylene.

Crustal structure and mantle transition zone thickness beneath a hydrothermal vent at the ultra-slow spreading Southwest Indian Ridge (49°39'E): a supplementary study based on passive seismic receiver functions

NASA Astrophysics Data System (ADS)

Ruan, Aiguo; Hu, Hao; Li, Jiabiao; Niu, Xiongwei; Wei, Xiaodong; Zhang, Jie; Wang, Aoxing

2017-06-01

As a supplementary study, we used passive seismic data recorded by one ocean bottom seismometer (OBS) station (49°41.8'E) close to a hydrothermal vent (49°39'E) at the Southwest Indian Ridge to invert the crustal structure and mantle transition zone (MTZ) thickness by P-to-S receiver functions to investigate previous active seismic tomographic crustal models and determine the influence of the deep mantle thermal anomaly on seafloor hydrothermal venting at an ultra-slow spreading ridge. The new passive seismic S-wave model shows that the crust has a low velocity layer (2.6 km/s) from 4.0 to 6.0 km below the sea floor, which is interpreted as partial melting. We suggest that the Moho discontinuity at 9.0 km is the bottom of a layer (2-3 km thick); the Moho (at depth of 6-7 km), defined by active seismic P-wave models, is interpreted as a serpentinized front. The velocity spectrum stacking plot made from passive seismic data shows that the 410 discontinuity is depressed by 15 km, the 660 discontinuity is elevated by 18 km, and a positive thermal anomaly between 182 and 237 K is inferred.

Numerical investigation of the boundary layer separation in chemical oxygen iodine laser

NASA Astrophysics Data System (ADS)

Huai, Ying; Jia, Shuqin; Wu, Kenan; Jin, Yuqi; Sang, Fengting

2017-11-01

Large eddy simulation is carried out to model the flow process in a supersonic chemical oxygen iodine laser. Unlike the common approaches relying on the tensor representation theory only, the model in the present work is an explicit anisotropy-resolving algebraic Subgrid-scale scalar flux formulation. With an accuracy in capturing the unsteady flow behaviours in the laser. Boundary layer separation initiated by the adverse pressure gradient is identified using Large Eddy Simulation. To quantify the influences of flow boundary layer on the laser performance, the fluid computations coupled with a physical optics loaded cavity model is developed. It has been found that boundary layer separation has a profound effect on the laser outputs due to the introduced shock waves. The F factor of the output beam decreases to 10% of the original one when the boundary transit into turbulence for the setup depicted in the paper. Because the pressure is always greater on the downstream of the boundary layer, there will always be a tendency of boundary separation in the laser. The results inspire designs of the laser to apply positive/passive control methods avoiding the boundary layer perturbation.

Bismuth Passivation Technique for High-Resolution X-Ray Detectors

NASA Technical Reports Server (NTRS)

Chervenak, James; Hess, Larry

2013-01-01

The Athena-plus team requires X-ray sensors with energy resolution of better than one part in 3,000 at 6 keV X-rays. While bismuth is an excellent material for high X-ray stopping power and low heat capacity (for large signal when an X-ray is stopped by the absorber), oxidation of the bismuth surface can lead to electron traps and other effects that degrade the energy resolution. Bismuth oxide reduction and nitride passivation techniques analogous to those used in indium passivation are being applied in a new technique. The technique will enable improved energy resolution and resistance to aging in bismuth-absorber-coupled X-ray sensors. Elemental bismuth is lithographically integrated into X-ray detector circuits. It encounters several steps where the Bi oxidizes. The technology discussed here will remove oxide from the surface of the Bi and replace it with nitridized surface. Removal of the native oxide and passivating to prevent the growth of the oxide will improve detector performance and insulate the detector against future degradation from oxide growth. Placing the Bi coated sensor in a vacuum system, a reduction chemistry in a plasma (nitrogen/hydrogen (N2/H2) + argon) is used to remove the oxide and promote nitridization of the cleaned Bi surface. Once passivated, the Bi will perform as a better X-ray thermalizer since energy will not be trapped in the bismuth oxides on the surface. A simple additional step, which can be added at various stages of the current fabrication process, can then be applied to encapsulate the Bi film. After plasma passivation, the Bi can be capped with a non-diffusive layer of metal or dielectric. A non-superconducting layer is required such as tungsten or tungsten nitride (WNx).

Experimental Study of Unsteady Flow Separation in a Laminar Boundary Layer

NASA Astrophysics Data System (ADS)

Bonacci, Andrew; Lang, Amy; Wahidi, Redha; Santos, Leonardo

2017-11-01

Flow separation, caused by an adverse pressure gradient, is a major problem in many applications. Reversing flow near the wall is the first sign of incipient separation and can bristle shark scales which may be linked to a passive, flow actuated separation control mechanism. An investigation of how this backflow forms and how it interacts with shark skin is of interest due to the fact that this could be used as a bioinspired means of initiating flow control. A water tunnel experiment aims to study unsteady separation with a focus on the reversing flow development near the wall within a flat plate laminar boundary layer (Re on order of 105) as an increasing adverse pressure gradient is induced by a rotating cylinder. Unsteady reversing flow development is documented using DPIV. Funding was provided by the National Science Foundation under the Research Experience for Undergraduates (REU) program (EEC 1659710) and the Army Research Office.

The Nature of Surface Oxides on Corrosion-Resistant Nickel Alloy Covered by Alkaline Water

PubMed Central

2010-01-01

A nickel alloy with high chrome and molybdenum content was found to form a highly resistive and passive oxide layer. The donor density and mobility of ions in the oxide layer has been determined as a function of the electrical potential when alkaline water layers are on the alloy surface in order to account for the relative inertness of the nickel alloy in corrosive environments. PMID:20672134

Chemical Passivation of Li(exp +)-Conducting Solid Electrolytes

NASA Technical Reports Server (NTRS)

West, William; Whitacre, Jay; Lim, James

2008-01-01

Plates of a solid electrolyte that exhibits high conductivity for positive lithium ions can now be passivated to prevent them from reacting with metallic lithium. Such passivation could enable the construction and operation of high-performance, long-life lithium-based rechargeable electrochemical cells containing metallic lithium anodes. The advantage of this approach, in comparison with a possible alternative approach utilizing lithium-ion graphitic anodes, is that metallic lithium anodes could afford significantly greater energy-storage densities. A major impediment to the development of such cells has been the fact that the available solid electrolytes having the requisite high Li(exp +)-ion conductivity are too highly chemically reactive with metallic lithium to be useful, while those solid electrolytes that do not react excessively with metallic lithium have conductivities too low to be useful. The present passivation method exploits the best features of both extremes of the solid-electrolyte spectrum. The basic idea is to coat a higher-conductivity, higher-reactivity solid electrolyte with a lower-conductivity, lower-reactivity solid electrolyte. One can then safely deposit metallic lithium in contact with the lower-reactivity solid electrolyte without incurring the undesired chemical reactions. The thickness of the lower-reactivity electrolyte must be great enough to afford the desired passivation but not so great as to contribute excessively to the electrical resistance of the cell. The feasibility of this method was demonstrated in experiments on plates of a commercial high-performance solid Li(exp +)- conducting electrolyte. Lithium phosphorous oxynitride (LiPON) was the solid electrolyte used for passivation. LiPON-coated solid-electrolyte plates were found to support electrochemical plating and stripping of Li metal. The electrical resistance contributed by the LiPON layers were found to be small relative to overall cell impedances.

Advanced Software Development Workstation Project

NASA Technical Reports Server (NTRS)

Lee, Daniel

1989-01-01

The Advanced Software Development Workstation Project, funded by Johnson Space Center, is investigating knowledge-based techniques for software reuse in NASA software development projects. Two prototypes have been demonstrated and a third is now in development. The approach is to build a foundation that provides passive reuse support, add a layer that uses domain-independent programming knowledge, add a layer that supports the acquisition of domain-specific programming knowledge to provide active support, and enhance maintainability and modifiability through an object-oriented approach. The development of new application software would use specification-by-reformulation, based on a cognitive theory of retrieval from very long-term memory in humans, and using an Ada code library and an object base. Current tasks include enhancements to the knowledge representation of Ada packages and abstract data types, extensions to support Ada package instantiation knowledge acquisition, integration with Ada compilers and relational databases, enhancements to the graphical user interface, and demonstration of the system with a NASA contractor-developed trajectory simulation package. Future work will focus on investigating issues involving scale-up and integration.

Biomechanical properties of the layered oesophagus and its remodelling in experimental type-1 diabetes.

PubMed

Yang, Jian; Zhao, Jingbo; Liao, Donghua; Gregersen, Hans

2006-01-01

Passive biomechanical properties in term of the stress-strain relationship and the shear modulus were studied in separated muscle layer and mucosa-submucosa layer in the oesophagus of normal and STZ (streptozotocin)-induced diabetic rats. The mucosa-submucosa and muscle layers were separated using microsurgery and studied in vitro using a self-developed test machine. Stepwise elongation and inflation plus continuous twist were applied to the samples. A constitutive equation based on a strain energy function was used for the stress-strain analysis. Five material constants were obtained for both layers. The mucosa-submucosa layer was significantly stiffer than the muscle layer in longitudinal, circumferential and circumferential-longitudinal shear direction. The mechanical constants of the oesophagus show that the oesophageal wall was anisotropic, the stiffness in the longitudinal direction was higher than in the circumferential direction in the intact oesophagus (P < 0.001) and in the muscle layer (P < 0.05). Diabetes-induced pronounced increase in the outer perimeter, inner perimeter and lumen area in both the muscle and mucosa-submucosa layer. The growth of the mucosa-submucosa layer (P < 0.001) was more pronounced than the muscle layer (P < 0.05). Furthermore, the circumferential stiffness of the mucosa-submucosa layer increased 28 days after STZ treatment. In conclusion, the oesophagus is a non-homogeneous anisotropic tube. Thus, the mechanical properties differed between layers as well as in different directions. Morphological and biomechanical remodelling is prominent in the diabetic oesophagus.

Voc enhancement of a solar cell with doped Li+-PbS as the active layer

NASA Astrophysics Data System (ADS)

Chávez Portillo, M.; Alvarado Pulido, J.; Gallardo Hernández, S.; Soto Cruz, B. S.; Alcántara Iniesta, S.; Gutiérrez Pérez, R.; Portillo Moreno, O.

2018-06-01

In this report, we investigate the fabrication of solar cells obtained by chemical bath technique, based on CdS as window layer and PbS and PbS-Li+-doped as the active layer. We report open-circuit-voltage Voc values of ∼392 meV for PbS and ∼630 meV for PbSLi+-doped, a remarkable enhanced in the open circuit voltage is shown for solar cells with doped active layer. Li+ ion passivate the dangling bonds in PbS-metal layer interface in consequence reducing the recombination centers.

Electromigration Critical Product to Measure Effect of Underfill Material in Suppressing Bi Segregation in Sn-58Bi Solder

NASA Astrophysics Data System (ADS)

Zhao, Xu; Takaya, Satoshi; Muraoka, Mikio

2017-08-01

Recently, we detected length-dependent electromigration (EM) behavior in Sn-58Bi (SB) solder and revealed the existence of Bi back-flow, which retards EM-induced Bi segregation and is dependent on solder length. The cause of the back-flow is attributed to an oxide layer formed on the SB solder. At present, underfill (UF) material is commonly used in flip-chip packaging as filler between chip and substrate to surround solder bumps. In this study, we quantitatively investigated the effect of UF material as a passivation layer on EM in SB solder strips. EM tests on SB solder strips with length of 50 μm, 100 μm, and 150 μm were conducted simultaneously. Some samples were coated with commercial thermosetting epoxy UF material, which acted as a passivation layer on the Cu-SB-Cu interconnections. The value of the critical product for SB solder was estimated to be 38 A/cm to 43 A/cm at 353 K to 373 K without UF coating and 59 A/cm at 373 K with UF coating. The UF material acting as a passivation layer suppressed EM-induced Bi segregation and increased the threshold current density by 37% to 55%. However, at very high current density, this effect became very slight. In addition, Bi atoms can diffuse to the anode side through the Sn phase, hence addition of microelements to the Sn phase to form obstacles, such as intermetallic compounds, may retard Bi segregation in SB solder.

Dual functional passivating layer of graphene/TiO2 for improved performance of dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Shahid, Muhammad Umair; Mohamed, Norani Muti; Muhsan, Ali Samer; Khatani, Mehboob; Bashiri, Robabeh; Zaine, Siti Nur Azella; Shamsudin, Adel Eskandar

2018-02-01

The FTO/TiO2 interface plays a crucial role in the performance of dye-sensitized solar cells (DSSCs). The uneven microstructure morphology of FTO (fluorine-doped tin oxide) glass surface and high porosity of TiO2 layer produce tiny gaps and voids at the FTO/TiO2 interface that breaks the connectivity, leading to an increase in the recombination process. In the current work, a dual functional passivating layer is introduced by the combination of the graphene/TiO2 compact layer. The excellent mobility and flexibility of graphene is capitalized using its layer to fill the voids in the FTO surface, which can consequently reduce the charge transfer resistance at the interface, while the added TiO2 compact layer avoids direct contact with the electrolyte thus reducing the recombination. Graphene was synthesized by the facile solvent exfoliation method with the assistance of the probe sonication process. The parameters of sonication were optimized to achieve high-quality concentrated graphene inks (0.177-0.51 mg/ml). Raman spectroscopy and transmission electron microscopy (TEM) revealed that the graphene obtained is of a few-layer type. Electrochemical impedance spectroscopy (EIS) analysis indicated that the incorporated compact layer of graphene/TiO2 was capable of accelerating the charge transfer and reducing the recombination process at the FTO/TiO2 interface. Consequently, the photoconversion efficiency (PCE) for the device (1 cm2 active area) with double-coated graphene layer under one sun irradiation (AM 1.5) was found to be 49.49% higher than the conventional one.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cela, Carlos Jose; Lazzi, Gianluca

The present embodiments are directed to implantable electrode arrays having virtual electrodes. The virtual electrodes may improve the resolution of the implantable electrode array without the burden of corresponding complexity of electronic circuitry and wiring. In a particular embodiment, a virtual electrode may include one or more passive elements to help steer current to a specific location between the active electrodes. For example, a passive element may be a metalized layer on a substrate that is adjacent to, but not directly connected to an active electrode. In certain embodiments, an active electrode may be directly coupled to a power sourcemore » via a conductive connection. Beneficially, the passive elements may help to increase the overall resolution of the implantable array by providing additional stimulation points without requiring additional wiring or driver circuitry for the passive elements.« less

Virtual electrodes for high-density electrode arrays

DOEpatents

Cela, Carlos J.; Lazzi, Gianluca

2015-10-13

The present embodiments are directed to implantable electrode arrays having virtual electrodes. The virtual electrodes may improve the resolution of the implantable electrode array without the burden of corresponding complexity of electronic circuitry and wiring. In a particular embodiment, a virtual electrode may include one or more passive elements to help steer current to a specific location between the active electrodes. For example, a passive element may be a metalized layer on a substrate that is adjacent to, but not directly connected to an active electrode. In certain embodiments, an active electrode may be directly coupled to a power source via a conductive connection. Beneficially, the passive elements may help to increase the overall resolution of the implantable array by providing additional stimulation points without requiring additional wiring or driver circuitry for the passive elements.

Four passive sampling elements (quatrefoil)--II. Film badges for monitoring radon and its progeny.

PubMed

Tommasino, L; Tokonami, S

2011-05-01

The four passive samplers (quatrefoil) already described in a parallel paper, make it possible to obtain thin radiation sources, useful for alpha and beta counting by any passive and real-time detector. In the present paper, the applications of this quatrefoil for measuring radon gas by etch-track detectors will be described. In the case of radon measurements, different solids have been identified, with radon-sorption partition coefficients related to air from 1 to 2000. Uniquely compact radon badges can be obtained by using a layer of these solids facing an alpha track-etch detector. These radon badges make it possible to overcome most of the shortcomings of existing passive monitors. Moreover, these badges show promise for studying the radon solubility of polymer films.

Calibration of silicone rubber rods as passive samplers for pesticides at two different flow velocities: Modeling of sampling rates under water boundary layer and polymer control.

PubMed

Martin, Alexis; Margoum, Christelle; Jolivet, Antoine; Assoumani, Azziz; El Moujahid, Bachir; Randon, Jérôme; Coquery, Marina

2018-04-01

There is a need to determine time-weighted average concentrations of polar contaminants such as pesticides by passive sampling in environmental waters. Calibration data for silicone rubber-based passive samplers are lacking for this class of compounds. The calibration data, sampling rate (R s ), and partition coefficient between silicone rubber and water (K sw ) were precisely determined for 23 pesticides and 13 candidate performance reference compounds (PRCs) in a laboratory calibration system over 14 d for 2 water flow velocities, 5 and 20 cm s -1 . The results showed that an in situ exposure duration of 7 d left a silicone rubber rod passive sampler configuration in the linear or curvilinear uptake period for 19 of the pesticides studied. A change in the transport mechanism from polymer control to water boundary layer control was observed for pesticides with a log K sw of approximately 3.3. The PRC candidates were not fully relevant to correct the impact of water flow velocity on R s . We therefore propose an alternative method based on an overall resistance to mass transfer model to adjust R s from laboratory experiments to in situ hydrodynamic conditions. We estimated diffusion coefficients (D s ) and thickness of water boundary layer (δ w ) as adjustable model parameters. Log D s values ranged from -12.13 to -10.07 m 2  s -1 . The estimated δ w value showed a power function correlation with water flow velocity. Environ Toxicol Chem 2018;37:1208-1218. © 2017 SETAC. © 2017 SETAC.

Realization of a passive micromixer using herringbone structure

NASA Astrophysics Data System (ADS)

Whulanza, Yudan; Utomo, Muhammad S.; Hilman, Adam

2018-02-01

Micromixing is an important research area for a variety of applications in sensing and diagnostics. In this paper, we are trying to develop an overall understanding of the process of mixing by allowing two fluid flows to flow through various asymmetrical structures. We have successfully realized and compared the performance of different passive micromixer designs based on the idea of staggered herringbone micromixer. The herringbone structure is expected to affect the flow rate. We design few microchannels using varieties on velocity, height and distance between herringbone. The layout of the structure is based on the staggered herringbone bilayers where the layer is positioned on the bottom wall of the microchannel. From simulation and experiment, it is known that the height of the channel and herringbone structure affect the flow, and the most effective height of the main channel and herringbone structure is 0.3 and 0.14 mm (2:1 ratio).

Shallow Heavily Doped n++ Germanium by Organo-Antimony Monolayer Doping.

PubMed

Alphazan, Thibault; Díaz Álvarez, Adrian; Martin, François; Grampeix, Helen; Enyedi, Virginie; Martinez, Eugénie; Rochat, Névine; Veillerot, Marc; Dewitte, Marc; Nys, Jean-Philippe; Berthe, Maxime; Stiévenard, Didier; Thieuleux, Chloé; Grandidier, Bruno

2017-06-14

Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the controlled grafting of Sb precursors and the subsequent diffusion of Sb into the wafer upon annealing. We also highlight the key role of citric acid in passivating the surface before its reaction with the Sb precursors and the benefit of a protective SiO 2 overlayer that enables an efficient incorporation of Sb dopants with a concentration higher than 10 20 cm -3 . Microscopic four-point probe measurements and photoconductivity experiments show the full electrical activation of the Sb dopants, giving rise to the formation of an n++ Sb-doped layer and an enhanced local field-effect passivation at the surface of the Ge wafer.

Hybrid Damping System for an Electronic Equipment Mounting Shelf

NASA Technical Reports Server (NTRS)

Voracek, David; Kolkailah, Faysal A.; Cavalli, J. R.; Elghandour, Eltahry

1997-01-01

The objective of this study was to design and construct a vibration control system for an electronic equipment shelf to be evaluated in the NASA Dryden FTF-II. The vibration control system was a hybrid system which included passive and active damping techniques. Passive damping was fabricated into the equipment shelf using ScothDamp(trademark) damping film and aluminum constraining layers. Active damping was achieved using a two channel active control circuit employing QuickPack(trademark) sensors and actuators. Preliminary Chirp test results indicated passive damping smoothed the frequency response while active damping reduced amplitudes of the frequency response for most frequencies below 500Hz.

Hybrid Damping System for an Electronic Equipment Mounting Shelf

NASA Technical Reports Server (NTRS)

Voracek, David; Kolkailah, Faysal A.; Cavalli, J. R.; Elghandour, Eltahry

1997-01-01

The objective of this study was to design and construct a vibration control system for an electronic equipment shelf to be evaluated in the NASA Dryden FTF-11. The vibration control system was a hybrid system which included passive and active damping techniques. Passive damping was fabricated into the equipment shelf using ScothDamp(trademark) damping film and aluminum constraining layers. Active damping was achieved using a two channel active control circuit employing QuickPack(trademark) sensors and actuators. Preliminary Chirp test results indicated passive damping smoothed the frequency response while active damping reduced amplitudes of the frequency response for most frequencies below 500Hz.

Design of a three-layer antireflection coating for high efficiency indium phosphide solar cells using a chemical oxide as first layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moulot, J.; Faur, M.; Faur, M.

1995-10-01

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause amore » significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, the authors demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface.« less

Passivation of micro-strip gas chambers with an interstitial germanium coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyamoto, J.; Knoll, G.F.; Amos, N.

1996-12-31

Micro-strip gas chambers (MSGCs) were constructed in the Solid-State Electronics Laboratory of the University of Michigan and their performance was studied. Many efforts have been made in the past to construct MSGCs that yield high absolute gas gain and stable gas gain. Introducing a thin germanium layer has been effective for passivation but difficulties associated with the poor adhesiveness of the thin layer have been a serious obstacle. This paper reports on a new method used to overcome these difficulties. Unlike the conventional coating method the thin germanium layer was successfully deposited between the strip lines. This technique requires amore » careful geometric alignment of a second photomask with the original micro-strip structure. The resulting detector performance was noteworthy and an absolute gas gain of 2 {center_dot} 10{sup 4} was easily achieved by the new chamber. The chamber`s gain instability was also reduced significantly compared with those without interstitial coating.« less

Modification of the large-scale features of high Reynolds number wall turbulence by passive surface obtrusions

NASA Astrophysics Data System (ADS)

Monty, J. P.; Allen, J. J.; Lien, K.; Chong, M. S.

2011-12-01

A high Reynolds number boundary-layer wind-tunnel facility at New Mexico State University was fitted with a regularly distributed braille surface. The surface was such that braille dots were closely packed in the streamwise direction and sparsely spaced in the spanwise direction. This novel surface had an unexpected influence on the flow: the energy of the very large-scale features of wall turbulence (approximately six-times the boundary-layer thickness in length) became significantly attenuated, even into the logarithmic region. To the author's knowledge, this is the first experimental study to report a modification of `superstructures' in a rough-wall turbulent boundary layer. The result gives rise to the possibility that flow control through very small, passive surface roughness may be possible at high Reynolds numbers, without the prohibitive drag penalty anticipated heretofore. Evidence was also found for the uninhibited existence of the near-wall cycle, well known to smooth-wall-turbulence researchers, in the spanwise space between roughness elements.

Electronic properties of Al xGa 1- xAs surface passivated by ultrathin silicon interface control layer

NASA Astrophysics Data System (ADS)

Adamowicz, B.; Miczek, M.; Ikeya, K.; Mutoh, M.; Saitoh, T.; Fujikura, H.; Hasegawa, H.

1999-03-01

The photoluminescence surface state spectroscopy (PLS 3) method was applied to a study of the surface state distribution ( NSS), effective surface recombination velocity ( Seff), electron ( EFn) and hole ( EFp) quasi-Fermi levels and band bending ( VS) on the Al 0.33Ga 0.67As surface air-exposed and passivated by the Si interface control layer (ICL) technique. Using the detailed measurements of the PL quantum efficiency for different excitation intensities, combined with the rigorous computer simulations of the bulk and surface recombination processes, the behavior and correlation among the surface characteristics under photo-excitation was determined. The present analysis indicated that forming of a Si 3N 4/Si ICL double layer (with a monolayer level control) on AlGaAs surface reduces the minimum interface state density down to 10 10 cm -2 eV -1 and surface recombination velocity to the range of 10 4 cm/s under low excitations.

All-back-Schottky-contact thin-film photovoltaics

NASA Astrophysics Data System (ADS)

Nardone, Marco

2016-02-01

The concept of All-Back-Schottky-Contact (ABSC) thin-film photovoltaic (TFPV) devices is introduced and evaluated using 2D numerical simulation. Reach-through Schottky junctions due to two metals of different work functions in an alternating, side-by-side pattern along the non-illuminated side generate the requisite built-in field. It is shown that our simulation method quantitatively describes existing data for a recently demonstrated heterojunction thin-film cell with interdigitated back contacts (IBCs) of one metal type. That model is extended to investigate the performance of ABSC devices with bimetallic IBCs within a pertinent parameter space. Our calculations indicate that 20% efficiency is achievable with micron-scale features and sufficient surface passivation. Bimetallic, micron-scale IBCs are readily fabricated using photo-lithographic techniques and the ABSC design allows for optically transparent surface passivation layers that need not be electrically conductive. The key advantages of the ABSC-TFPV architecture are that window layers, buffer layers, heterojunctions, and module scribing are not required because both contacts are located on the back of the device.

Vibration control of beams using stand-off layer damping: finite element modeling and experiments

NASA Astrophysics Data System (ADS)

Chaudry, A.; Baz, A.

2006-03-01

Damping treatments with stand-off layer (SOL) have been widely accepted as an attractive alternative to conventional constrained layer damping (CLD) treatments. Such an acceptance stems from the fact that the SOL, which is simply a slotted spacer layer sandwiched between the viscoelastic layer and the base structure, acts as a strain magnifier that considerably amplifies the shear strain and hence the energy dissipation characteristics of the viscoelastic layer. Accordingly, more effective vibration suppression can be achieved by using SOL as compared to employing CLD. In this paper, a comprehensive finite element model of the stand-off layer constrained damping treatment is developed. The model accounts for the geometrical and physical parameters of the slotted SOL, the viscoelastic, layer the constraining layer, and the base structure. The predictions of the model are validated against the predictions of a distributed transfer function model and a model built using a commercial finite element code (ANSYS). Furthermore, the theoretical predictions are validated experimentally for passive SOL treatments of different configurations. The obtained results indicate a close agreement between theory and experiments. Furthermore, the obtained results demonstrate the effectiveness of the CLD with SOL in enhancing the energy dissipation as compared to the conventional CLD. Extension of the proposed one-dimensional CLD with SOL to more complex structures is a natural extension to the present study.

DGT Passive Sampling for Quantitative in Situ Measurements of Compounds from Household and Personal Care Products in Waters.

PubMed

Chen, Wei; Li, Yanying; Chen, Chang-Er; Sweetman, Andrew J; Zhang, Hao; Jones, Kevin C

2017-11-21

Widespread use of organic chemicals in household and personal care products (HPCPs) and their discharge into aquatic systems means reliable, robust techniques to monitor environmental concentrations are needed. The passive sampling approach of diffusive gradients in thin-films (DGT) is developed here and demonstrated to provide in situ quantitative and time-weighted average (TWA) measurement of these chemicals in waters. The novel technique is developed for HPCPs, including preservatives, antioxidants and disinfectants, by evaluating the performance of different binding agents. Ultrasonic extraction of binding gels in acetonitrile gave good and consistent recoveries for all test chemicals. Uptake by DGT with HLB (hydrophilic-lipophilic-balanced) as the binding agent was relatively independent of pH (3.5-9.5), ionic strength (0.001-0.1 M) and dissolved organic matter (0-20 mg L -1 ), making it suitable for applications across a wide range of environments. Deployment time and diffusion layer thickness dependence experiments confirmed DGT accumulated chemicals masses are consistent with theoretical predictions. The technique was further tested and applied in the influent and effluent of a wastewater treatment plant. Results were compared with conventional grab-sampling and 24-h-composited samples from autosamplers. DGT provided TWA concentrations over up to 18 days deployment, with minimal effects from biofouling or the diffusive boundary layer. The field application demonstrated advantages of the DGT technique: it gives in situ analyte preconcentration in a simple matrix, with more quantitative measurement of the HPCP analytes.

Cation profiling of passive films on stainless steel formed in sulphuric and acetic acid by deconvolution of angle-resolved X-ray photoelectron spectra

NASA Astrophysics Data System (ADS)

Högström, Jonas; Fredriksson, Wendy; Edstrom, Kristina; Björefors, Fredrik; Nyholm, Leif; Olsson, Claes-Olof A.

2013-11-01

An approach for determining depth gradients of metal-ion concentrations in passive films on stainless steel using angle-resolved X-ray photoelectron spectroscopy (ARXPS) is described. The iterative method, which is based on analyses of the oxidised metal peaks, provides increased precision and hence allows faster ARXPS measurements to be carried out. The method was used to determine the concentration depth profiles for molybdenum, iron and chromium in passive films on 316L/EN 1.4432 stainless steel samples oxidised in 0.5 M H2SO4 and acetic acid diluted with 0.02 M Na2B4O7 · 10H2O and 1 M H2O, respectively. The molybdenum concentration in the film is pin-pointed to the oxide/metal interface and the films also contained an iron-ion-enriched surface layer and a chromium-ion-dominated middle layer. Although films of similar composition and thickness (i.e., about 2 nm) were formed in the two electrolytes, the corrosion currents were found to be three orders of magnitude larger in the acetic acid solution. The differences in the layer composition, found for the two electrolytes as well as different oxidation conditions, can be explained based on the oxidation potentials of the metals and the dissolution rates of the different metal ions.

Low RF Reflectivity Spacecraft Thermal Blanket by Using High-Impedance Surface Absorbers

NASA Astrophysics Data System (ADS)

Costa, F.; Monorchio, A.; Carrubba, E.; Zolesi, V.

2012-05-01

A technique for designing a low-RF reflectivity thermal blanket is presented. Multi-layer insulation (MLI) blankets are employed to stabilize the temperature on spacecraft unit but they can be responsible of passive intermodulation products and high-mutual coupling between antennas since they are realized with metallic materials. The possibility to replace the last inner layer of a MLI blanket with an ultra-thin absorbing layer made of high-impedance surface absorber is discussed.

Modulation of porphyrin photoluminescence by nanoscale spacers on silicon substrates

NASA Astrophysics Data System (ADS)

Fang, Y. C.; Zhang, Y.; Gao, H. Y.; Chen, L. G.; Gao, B.; He, W. Z.; Meng, Q. S.; Zhang, C.; Dong, Z. C.

2013-11-01

We investigate photoluminescence (PL) properties of quasi-monolayered tetraphenyl porphyrin (TPP) molecules on silicon substrates modulated by three different nanoscale spacers: native oxide layer (NOL), hydrogen (H)-passivated layer, and Ag nanoparticle (AgNP) thin film, respectively. In comparison with the PL intensity from the TPP molecules on the NOL-covered silicon, the fluorescence intensity from the molecules on the AgNP-covered surface was greatly enhanced while that for the H-passivated surface was found dramatically suppressed. Time-resolved fluorescence spectra indicated shortened lifetimes for TPP molecules in both cases, but the decay kinetics is believed to be different. The suppressed emission for the H-passivated sample was attributed to the weaker decoupling effect of the monolayer of hydrogen atoms as compared to the NOL, leading to increased nonradiative decay rate; whereas the enhanced fluorescence with shortened lifetime for the AgNP-covered sample is attributed not only to the resonant excitation by local surface plasmons, but also to the increased radiative decay rate originating from the emission enhancement in plasmonic "hot-spots".

Stabilizing a graphene platform toward discrete components

NASA Astrophysics Data System (ADS)

Mzali, Sana; Montanaro, Alberto; Xavier, Stéphane; Servet, Bernard; Mazellier, Jean-Paul; Bezencenet, Odile; Legagneux, Pierre; Piquemal-Banci, Maëlis; Galceran, Regina; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Cojocaru, Costel-Sorin; Centeno, Alba; Zurutuza, Amaia

2016-12-01

We report on statistical analysis and consistency of electrical performances of devices based on a large scale passivated graphene platform. More than 500 graphene field effect transistors (GFETs) based on graphene grown by chemical vapor deposition and transferred on 4 in. SiO2/Si substrates were fabricated and tested. We characterized the potential of a two-step encapsulation process including an Al2O3 protection layer to avoid graphene contamination during the lithographic process followed by a final Al2O3 passivation layer subsequent to the GFET fabrication. Devices were investigated for occurrence and reproducibility of conductance minimum related to the Dirac point. While no conductance minimum was observed in unpassivated devices, 75% of the passivated transistors exhibited a clear conductance minimum and low hysteresis. The maximum of the device number distribution corresponds to a residual doping below 5 × 1011 cm-2 (0.023 V/nm). This yield shows that GFETs integrating low-doped graphene and exhibiting small hysteresis in the transfer characteristics can be envisaged for discrete components, with even further potential for low power driven electronics.

Optimization of Controllable Factors in the Aluminum Silicon Eutectic Paste and Rear Silicon Nitride Mono-Passivation Layer of PERC Solar Cells

NASA Astrophysics Data System (ADS)

Park, Sungeun; Park, Hyomin; Kim, Dongseop; Yang, JungYup; Lee, Dongho; Kim, Young-Su; Kim, Hyun-Jong; Suh, Dongchul; Min, Byoung Koun; Kim, Kyung Nam; Park, Se Jin; Kim, Donghwan; Lee, Hae-Seok; Nam, Junggyu; Kang, Yoonmook

2018-05-01

Passivated emitter and rear contact (PERC) is a promising technology owing to high efficiency can be achieved with p-type wafer and their easily applicable to existing lines. In case of using p-type mono wafer, 0.5-1% efficiency increase is expected with PERC technologies compared to existing Al BSF solar cells, while for multi-wafer solar cells it is 0.5-0.8%. We addressed the optimization of PERC solar cells using the Al paste. The paste was prepared from the aluminum-silicon alloy with eutectic composition to avoid the formation of voids that degrade the open-circuit voltage. The glass frit of the paste was changed to improve adhesion. Scanning electron microscopy revealed voids and local back surface field between the aluminum electrode and silicon base. We confirmed the conditions on the SiNx passivation layer for achieving higher efficiency and better adhesion for long-term stability. The cell characteristics were compared across cells containing different pastes. PERC solar cells with the Al/Si eutectic paste exhibited the efficiency of 19.6%.

Corrosion Properties of Dissimilar Friction Stir Welded 6061 Aluminum and HT590 Steel

NASA Astrophysics Data System (ADS)

Seo, Bosung; Song, Kuk Hyun; Park, Kwangsuk

2018-05-01

Corrosion properties of dissimilar friction stir welded 6061 aluminum and HT590 steel were investigated to understand effects of galvanic corrosion. As cathode when coupled, HT590 was cathodically protected. However, the passivation of AA6061 made the aluminum alloy cathode temporarily, which leaded to corrosion of HT590. From the EIS analysis showing Warburg diffusion plot in Nyquist plots, it can be inferred that the stable passivation layer was formed on AA6061. However, the weld as well as HT590 did not show Warburg diffusion plot in Nyquist plots, suggesting that there was no barrier for corrosion or even if it exists, the barrier had no function for preventing and/or retarding charge transport through the passivation layer. The open circuit potential measurements showed that the potential of the weld was similar to that of HT590, which lied in the pitting region for AA6061, making the aluminum alloy part of the weld keep corrosion state. That resulted in the cracked oxide film on AA6061 of the weld, which could not play a role of corrosion barrier.

TEM-EELS Investigation of Boron and Phosphorus Passivated 4H-SiC/SiO2 Interface Structures

NASA Astrophysics Data System (ADS)

Klingshirn, Christopher; Taillon, Joshua; Liu, Gang; Dhar, Sarit; Feldman, Leonard; Zheleva, Tsvetanka; Lelis, Aivars; Salamanca-Riba, Lourdes

A high density of electronic defects at the SiC/SiO2 interface adversely affects SiC-based metal oxide semiconductor devices. Various treatments are known to improve device performance. Annealing in a nitric oxide (NO) environment, for example, passivates electronic defects at the interface and raises the carrier mobility in the active region to 35-40 cm2/Vs, but the effect saturates after about 60 minutes of annealing. Passivation with phosphorus or boron improves upon NO by a factor of 2, increasing the mobility to over 90 cm2/Vs.2 We investigate the chemical and structural effects of these treatments on the SiC/SiO2 transition layer using high-resolution transmission electron microscopy (HRTEM) and high angle annular dark field (HAADF). Electron energy loss spectroscopy Spectrum Imaging (EELS SI) collected across the transition region allow identification of the width, composition and types of bonding at the transition layer. Advanced machine learning techniques applied to the EELS data reveal intermediate bonding states within this region. Supported by ARL under Grant No. W911NF1420110.

Effect of gamma irradiation on the photoluminescence of porous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elistratova, M. A., E-mail: Marina.Elistratova@mail.ioffe.ru; Romanov, N. M.; Goryachev, D. N.

The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of photoluminescence at low irradiation doses and recovery after further irradiation are registered. It is found that porous silicon is strongly oxidized after gamma irradiation and the oxidation process continues for several days after irradiation. It is conceived that the change in the photoluminescence spectra and intensity of porous silicon after gamma irradiation is caused by a changemore » in the passivation type of the porous surface: instead of hydrogen passivation, more stable oxygen passivation is observed. To stabilize the photoluminescence spectra of porous silicon, the use of fullerenes is proposed. No considerable changes in the photoluminescence spectra during irradiation and up to 18 days after irradiation are detected in a porous silicon sample with a thermally deposited fullerene layer. It is shown that porous silicon samples with a deposited C{sub 60} layer are stable to gamma irradiation and oxidation.« less

Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

DOE PAGES

Young, David L.; Nemeth, William; LaSalvia, Vincenzo; ...

2016-06-01

Here, we present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO 2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm -2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nmmore » thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iV oc) values of 730 mV with J o values of 2 fA/cm 2. Samples doped with B 2H 6 gave iV oc values of 690 mV and J o values of 24 fA/cm 2, outperforming BF 3 doping, which gave iV oc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.« less

Schottky barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1981-01-01

A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

Investigation of the Dissolution-Reformation Cycle of the Passive Oxide Layer on NiTi Orthodontic Archwires

NASA Astrophysics Data System (ADS)

Uzer, B.; Birer, O.; Canadinc, D.

2017-09-01

Dissolution-reformation cycle of the passive oxide layer on the nickel-titanium (NiTi) orthodontic archwires was investigated, which has recently been recognized as one of the key parameters dictating the biocompatibility of archwires. Specifically, commercially available NiTi orthodontic archwires were immersed in artificial saliva solutions of different pH values (2.3, 3.3, and 4.3) for four different immersion periods: 1, 7, 14, and 30 days. Characterization of the virgin and tested samples revealed that the titanium oxide layer on the NiTi archwire surfaces exhibit a dissolution-reformation cycle within the first 14 days of the immersion period: the largest amount of Ni ion release occurred within the first week of immersion, while it significantly decreased during the reformation period from day 7 to day 14. Furthermore, the oxide layer reformation was catalyzed on the grooves within the peaks and valleys due to relatively larger surface energy of these regions, which eventually decreased the surface roughness significantly within the reformation period. Overall, the current results clearly demonstrate that the analyses of dissolution-reformation cycle of the oxide layer in orthodontic archwires, surface roughness, and ion release behavior constitute utmost importance in order to ensure both the highest degree of biocompatibility and an efficient medical treatment.

Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

NASA Astrophysics Data System (ADS)

Chagarov, Evgueni A.; Kavrik, Mahmut S.; Fang, Ziwei; Tsai, Wilman; Kummel, Andrew C.

2018-06-01

Comprehensive Density-Functional Theory (DFT) Molecular Dynamics (MD) simulations were performed to investigate interfaces between a-HfO2 and SiGe or Ge semiconductors with fully-stoichiometric a-SiO2 or sub-oxide SiO interlayers. The electronic structure of the selected stacks was calculated with a HSE06 hybrid functional. Simulations were performed before and after hydrogen passivation of residual interlayer defects. For the SiGe substrate with Ge termination prior to H passivation, the stacks with a-SiO suboxide interlayer (a-HfO2/a-SiO/SiGe) demonstrate superior electronic properties and wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/SiGe). After H passivation, most of the a-HfO2/a-SiO2/SiGe defects are passivated. To investigate effect of random placement of Si and Ge atoms additional simulations with a randomized SiGe slab were performed demonstrating improvement of electronic structure. For Ge substrates, before H passivation, the stacks with a SiO suboxide interlayer (a-HfO2/a-SiO/Ge) also demonstrate wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/Ge). However, even for a-HfO2/a-SiO/Ge, the Fermi level is shifted close to the conduction band edge (CBM) consistent with Fermi level pinning. Again, after H passivation, most of the a-HfO2/a-SiO2/Ge defects are passivated. The stacks with fully coordinated a-SiO2 interlayers have much stronger deformation and irregularity in the semiconductor (SiGe or Ge) upper layers leading to multiple under-coordinated atoms which create band-edge states and decrease the band-gap prior to H passivation.

An investigation of passivity and breakdown of amorphous chromium-bromine thin films for surface modification of metallic biomaterials

NASA Astrophysics Data System (ADS)

Cormier, Lyne Mercedes

1998-12-01

The objectives of this investigation of amorphous Cr-B thin films as prospective coatings for biomaterials applications were to (i) produce and characterize an amorphous Cr-B thin film coating by magnetron sputtering, (ii) evaluate its corrosion resistance in physiologically relevant electrolytes, and (iii) propose a mechanism for the formation/dissolution of the passive film formed on amorphous Cr-B in chloride-containing near-neutral salt electrolytes. Dense (zone T) amorphous Cr75B25 thin films produced by DC magnetron sputtering were found to be better corrosion barriers than nanoczystalline or porous (zone 1) amorphous Cr75B25 thin films. The growth morphology and microstructure were a function of the sputtering pressure and substrate temperature, in agreement with the structure zone model of Thornton. The passivity/loss of passivity of amorphous Cr 75B25 in near-neutral salt solutions was explained using a modified bipolar layer model. The chromate ions identified by X-Ray Photoelectron Spectroscopy (XPS) in the outer layer of the passive film were found to play a determinant role in the passive behaviour of amorphous Cr75B 25 thin films in salt solutions. In near-neutral salt solutions of pH = 5 to 7, a decrease in pH combined with an increase in chloride concentration resulted in less dissolution of the Cr75B25 thin films. The apparent breakdown potential at 240 mV (SCE) obtained by Cyclic Potentiodynamic Anodic Polarization (CPAP) was associated with oxidation of species within the passive film, but not to dissolution leading to immediate loss of passivity. Pit Propagation Rate (PPR) testing evaluated the stable pitting potential to be between 600 and 650 mV. Amorphous Cr75B25 thin films ranked the best among other Cr-based materials such as 316L stainless steel, CrB2 and Cr investigated in this study for general corrosion behaviour in NaCl and Hanks solutions by CPAP testing. In terms of corrosion resistance, amorphous Cr75B25 thin films were recognized as a promising material for surface modification of biomaterials.

CdCl2 Passivation of Polycrystalline CdMgTe and CdZnTe Absorbers for Tandem Photovoltaic Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzger, Wyatt K; Swanson, Drew; Reich, Carey

As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extendingmore » Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.« less

Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Corsino, Dianne C.; Bermundo, Juan Paolo S.; Fujii, Mami N.; Takahashi, Kiyoshi; Ishikawa, Yasuaki; Uraoka, Yukiharu

2018-06-01

Atomic layer deposition (ALD) of Al2O3 using dimethylaluminum hydride (DMAH) was demonstrated as an effective passivation for amorphous InGaZnO thin-film transistors (TFTs). Compared with the most commonly used precursor, trimethylaluminum, TFTs fabricated with DMAH showed improved stability, resulting from the lower amount of oxygen vacancies, and hence fewer trap sites, as shown by X-ray photoelectron spectroscopy (XPS) depth profiling analysis. We found that prolonged plasma exposure during ALD can eliminate the hump phenomenon, which is only present for DMAH. The higher Al2O3 deposition rate when using DMAH is in line with the requirements of emerging techniques, such as spatial ALD, for improving fabrication throughput.

Effects of surface passivation on twin-free GaAs nanosheets.

PubMed

Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

2015-02-24

Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.

Amine treatment induced perovskite nanowire network in perovskite solar cells: efficient surface passivation and carrier transport

NASA Astrophysics Data System (ADS)

Xiao, Ke; Cui, Can; Wang, Peng; Lin, Ping; Qiang, Yaping; Xu, Lingbo; Xie, Jiangsheng; Yang, Zhengrui; Zhu, Xiaodong; Yu, Xuegong; Yang, Deren

2018-02-01

In the fabrication of high efficiency organic-inorganic metal halide perovskite solar cells (PSCs), an additional interface modifier is usually applied for enhancing the interface passivation and carrier transport. In this paper, we develop an innovative method with in-situ growth of one-dimensional perovskite nanowire (1D PNW) network triggered by Lewis amine over the perovskite films. To our knowledge, this is the first time to fabricate PSCs with shape-controlled perovskite surface morphology, which improved power conversion efficiency (PCE) from 14.32% to 16.66% with negligible hysteresis. The amine molecule can passivate the trap states on the polycrystalline perovskite surface to reduce trap-state density. Meanwhile, as a fast channel, the 1D PNWs would promote carrier transport from the bulk perovskite film to the electron transport layer. The PSCs with 1D PNW modification not only exhibit excellent photovoltaic performances, but also show good stability with only 4% PCE loss within 30 days in the ambient air without encapsulation. Our results strongly suggest that in-situ grown 1D PNW network provides a feasible and effective strategy for nanostructured optoelectronic devices such as PSCs to achieve superior performances.

Improved PEDOT:PSS/c-Si hybrid solar cell using inverted structure and effective passivation

PubMed Central

Zhang, Xisheng; Yang, Dong; Yang, Zhou; Guo, Xiaojia; Liu, Bin; Ren, Xiaodong; Liu, Shengzhong (Frank)

2016-01-01

The PEDOT:PSS is often used as the window layer in the normal structured PEDOT:PSS/c-Si hybrid solar cell (HSC), leading to significantly reduced response, especially in red and near-infrared region. By depositing the PEDOT:PSS on the rear side of the c-Si wafer, we developed an inverted structured HSC with much higher solar cell response in the red and near-infrared spectrum. Passivating the other side with hydrogenated amorphous silicon (a-Si:H) before electrode deposition, the minority carrier lifetime has been significantly increased and the power conversion efficiency (PCE) of the inverted HSC is improved to as high as 16.1% with an open-circuit voltage (Voc) of 634 mV, fill factor (FF) of 70.5%, and short-circuit current density (Jsc) of 36.2 mA cm−2, an improvement of 33% over the control device. The improvements are ascribed to inverted configuration and a-Si:H passivation, which can increase photon carrier generation and reduce carrier recombination, respectively. Both of them will benefit the photovoltaic performance and should be considered as effective design strategies to improve the performance of organic/c-Si HSCs. PMID:27725714

Nested potassium hydroxide etching and protective coatings for silicon-based microreactors

NASA Astrophysics Data System (ADS)

de Mas, Nuria; Schmidt, Martin A.; Jensen, Klavs F.

2014-03-01

We have developed a multilayer, multichannel silicon-based microreactor that uses elemental fluorine as a reagent and generates hydrogen fluoride as a byproduct. Nested potassium hydroxide etching (using silicon nitride and silicon oxide as masking materials) was developed to create a large number of channels (60 reaction channels connected to individual gas and liquid distributors) of significantly different depths (50-650 µm) with sloped walls (54.7° with respect to the (1 0 0) wafer surface) and precise control over their geometry. The wetted areas were coated with thermally grown silicon oxide and electron-beam evaporated nickel films to protect them from the corrosive fluorination environment. Up to four Pyrex layers were anodically bonded to three silicon layers in a total of six bonding steps to cap the microchannels and stack the reaction layers. The average pinhole density in as-evaporated films was 3 holes cm-2. Heating during anodic bonding (up to 350 °C for 4 min) did not significantly alter the film composition. Upon fluorine exposure, nickel films (160 nm thick) deposited on an adhesion layer of Cr (10 nm) over an oxidized silicon substrate (up to 500 nm thick SiO2) led to the formation of a nickel fluoride passivation layer. This microreactor was used to investigate direct fluorinations at room temperature over several hours without visible signs of film erosion.

SMA Hybrid Composites for Dynamic Response Abatement Applications

NASA Technical Reports Server (NTRS)

Turner, Travis L.

2000-01-01

A recently developed constitutive model and a finite element formulation for predicting the thermomechanical response of Shape Memory Alloy (SMA) hybrid composite (SMAHC) structures is briefly described. Attention is focused on constrained recovery behavior in this study, but the constitutive formulation is also capable of modeling restrained or free recovery. Numerical results are shown for glass/epoxy panel specimens with embedded Nitinol actuators subjected to thermal and acoustic loads. Control of thermal buckling, random response, sonic fatigue, and transmission loss are demonstrated and compared to conventional approaches including addition of conventional composite layers and a constrained layer damping treatment. Embedded SMA actuators are shown to be significantly more effective in dynamic response abatement applications than the conventional approaches and are attractive for combination with other passive and/or active approaches.

III-V compound semiconductor growth on silicon via germanium buffer and surface passivation for CMOS technology

NASA Astrophysics Data System (ADS)

Choi, Donghun

Integration of III-V compound semiconductors on silicon substrates has recently received much attention for the development of optoelectronic and high speed electronic devices. However, it is well known that there are some key challenges for the realization of III-V device fabrication on Si substrates: (i) the large lattice mismatch (in case of GaAs: 4.1%), and (ii) the formation of antiphase domain (APD) due to the polar compound semiconductor growth on non-polar elemental structure. Besides these growth issues, the lack of a useful surface passivation technology for compound semiconductors has precluded development of metal-oxide-semiconductor (MOS) devices and causes high surface recombination parasitics in scaled devices. This work demonstrates the growth of high quality III-V materials on Si via an intermediate Ge buffer layer and some surface passivation methods to reduce interface defect density for the fabrication of MOS devices. The initial goal was to achieve both low threading dislocation density (TDD) and low surface roughness on Ge-on-Si heterostructure growth. This was achieved by repeating a deposition-annealing cycle consisting of low temperature deposition + high temperature-high rate deposition + high temperature hydrogen annealing, using reduced-pressure chemical-vapor deposition (CVD). We then grew III-V materials on the Ge/Si virtual substrates using molecular-beam epitaxy (MBE). The relationship between initial Ge surface configuration and antiphase boundary formation was investigated using surface reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) image analysis. In addition, some MBE growth techniques, such as migration enhanced epitaxy (MEE) and low temperature GaAs growth, were adopted to improve surface roughness and solve the Ge self-doping problem. Finally, an Al2O3 gate oxide layer was deposited using atomic-layer-deposition (ALD) system after HCl native oxide etching and ALD in-situ pre-annealing at 400 °C. A 100 nm thick aluminum layer was deposited to form the gate contact for a MOS device fabrication. C-V measurement results show very small frequency dispersion and 200-300 mV hysteresis, comparable to our best results for InGaAs/GaAs MOS structures on GaAs substrate. Most notably, the quasi-static C-V curve demonstrates clear inversion layer formation. I-V curves show a reasonable leakage current level. The inferred midgap interface state density, Dit, of 2.4 x 1012 eV-1cm-2 was calculated by combined high-low frequency capacitance method. In addition, we investigated the interface properties of amorphous LaAlO 3/GaAs MOS capacitors fabricated on GaAs substrate. The surface was protected during sample transfer between III-V and oxide molecular beam deposition (MBD) chambers by a thick arsenic-capping layer. An annealing method, a low temperature-short time RTA followed by a high temperature RTA, was developed, yielding extremely small hysteresis (˜ 30 mV), frequency dispersion (˜ 60 mV), and interface trap density (mid 1010 eV-1cm -2). We used capacitance-voltage (C-V) and current-voltage (I-V) measurements for electrical characterization of MOS devices, tapping-mode AFM for surface morphology analysis, X-ray photoelectron spectroscopy (XPS) for chemical elements analysis of interface, cross section transmission-electron microscopy (TEM), X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), and photoluminescence (PL) measurement for film quality characterization. This successful growth and appropriate surface treatments of III-V materials provides a first step for the fabrication of III-V optical and electrical devices on the same Si-based electronic circuits.

Electrochemical and in-situ Surface-Enhanced Raman Spectroscopic (SERS) study of passive films formed on low-carbon steel in highly alkaline environments

NASA Astrophysics Data System (ADS)

Mancio, Mauricio

In reinforced concrete, a passive layer forms because of the alkaline conditions in the pores of the cement paste, where large concentrations of hydroxides create a solution with pH typically between 12 and 14. The corrosion resistance of the material depends on the characteristics and integrity of the passive film; however, currently very limited information is available about the passive films formed on carbon steel under such conditions. This work presents an electrochemical and in-situ Surface-Enhanced Raman Spectroscopic (SERS) study of passive films formed on low-carbon steel in highly alkaline environments. More specifically, the study focuses on the characterization of the films formed on ASTM A36 steel reinforcing bar exposed to aqueous solutions that aim to reproduce the chemistry of the environment typically found within the cement paste. Electrochemical techniques such as cyclic potentiodynamic polarization curves, galvanostatic cathodic polarization and linear polarization resistance were employed, in addition to in-situ Surface Enhanced Raman Spectroscopy (SERS). The experimental setup was built in a way that SERS experiments could be performed simultaneously with potentiodynamic polarization curves, enabling a detailed analysis of the formation and reduction of the surface films as a function of applied potential. Three solutions with different pH levels were used for the polarization and SERS experiments, namely 0.55M KOH + 0.16M NaOH ([OH-]=0.71), 0.08M KOH + 0.02M NaOH ([OH-]=0.10) and 0.008M KOH + 0.002M NaOH ([OH-]=0.01). Additional NaOH solutions in which the pH was varied from 13 to 9 and the ionic strength from 10 -5 to 10-1 were prepared for a pilot study using linear polarization resistance. Results show that the features observed in the cyclic potentiodynamic polarization curves correlated well with the potential arrests observed in the GCP plots as well as with the changes observed in the SERS spectra, providing valuable information about the formation of passive films on carbon steel in each of the environments studied in this research. Although there are key differences among the films formed in the different solutions tested---particularly regarding their thickness and protectiveness---once the film-formation processes had been completed, generally the films were characterized by an inner layer of Fe(II) and an outer layer of Fe(III). A Fe(OH)2-like species appears consistently as dominating the inner Fe(II) layer, while the outer typically composed mostly by gamma-Fe2O3 and/or gamma-FeOOH. Film thickness varied from about 22 nm to 266 nm depending on the pH of the solution, and decreased as pH was reduced.

Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Hwang, Ihn; Wang, Wei; Hwang, Sun Kak; Cho, Sung Hwan; Kim, Kang Lib; Jeong, Beomjin; Huh, June; Park, Cheolmin

2016-05-01

The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 104, a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period.The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 104, a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00505e

OESbathy version 1.0: a method for reconstructing ocean bathymetry with generalized continental shelf-slope-rise structures

NASA Astrophysics Data System (ADS)

Goswami, A.; Olson, P. L.; Hinnov, L. A.; Gnanadesikan, A.

2015-09-01

We present a method for reconstructing global ocean bathymetry that combines a standard plate cooling model for the oceanic lithosphere based on the age of the oceanic crust, global oceanic sediment thicknesses, plus generalized shelf-slope-rise structures calibrated at modern active and passive continental margins. Our motivation is to develop a methodology for reconstructing ocean bathymetry in the geologic past that includes heterogeneous continental margins in addition to abyssal ocean floor. First, the plate cooling model is applied to maps of ocean crustal age to calculate depth to basement. To the depth to basement we add an isostatically adjusted, multicomponent sediment layer constrained by sediment thickness in the modern oceans and marginal seas. A three-parameter continental shelf-slope-rise structure completes the bathymetry reconstruction, extending from the ocean crust to the coastlines. Parameters of the shelf-slope-rise structures at active and passive margins are determined from modern ocean bathymetry at locations where a complete history of seafloor spreading is preserved. This includes the coastal regions of the North, South, and central Atlantic, the Southern Ocean between Australia and Antarctica, and the Pacific Ocean off the west coast of South America. The final products are global maps at 0.1° × 0.1° resolution of depth to basement, ocean bathymetry with an isostatically adjusted multicomponent sediment layer, and ocean bathymetry with reconstructed continental shelf-slope-rise structures. Our reconstructed bathymetry agrees with the measured ETOPO1 bathymetry at most passive margins, including the east coast of North America, north coast of the Arabian Sea, and northeast and southeast coasts of South America. There is disagreement at margins with anomalous continental shelf-slope-rise structures, such as around the Arctic Ocean, the Falkland Islands, and Indonesia.

Improving the Stability of High-Performance Multilayer MoS2 Field-Effect Transistors.

PubMed

Liu, Na; Baek, Jongyeol; Kim, Seung Min; Hong, Seongin; Hong, Young Ki; Kim, Yang Soo; Kim, Hyun-Suk; Kim, Sunkook; Park, Jozeph

2017-12-13

In this study, we propose a method for improving the stability of multilayer MoS 2 field-effect transistors (FETs) by O 2 plasma treatment and Al 2 O 3 passivation while sustaining the high performance of bulk MoS 2 FET. The MoS 2 FETs were exposed to O 2 plasma for 30 s before Al 2 O 3 encapsulation to achieve a relatively small hysteresis and high electrical performance. A MoO x layer formed during the plasma treatment was found between MoS 2 and the top passivation layer. The MoO x interlayer prevents the generation of excess electron carriers in the channel, owing to Al 2 O 3 passivation, thereby minimizing the shift in the threshold voltage (V th ) and increase of the off-current leakage. However, prolonged exposure of the MoS 2 surface to O 2 plasma (90 and 120 s) was found to introduce excess oxygen into the MoO x interlayer, leading to more pronounced hysteresis and a high off-current. The stable MoS 2 FETs were also subjected to gate-bias stress tests under different conditions. The MoS 2 transistors exhibited negligible decline in performance under positive bias stress, positive bias illumination stress, and negative bias stress, but large negative shifts in V th were observed under negative bias illumination stress, which is attributed to the presence of sulfur vacancies. This simple approach can be applied to other transition metal dichalcogenide materials to understand their FET properties and reliability, and the resulting high-performance hysteresis-free MoS 2 transistors are expected to open up new opportunities for the development of sophisticated electronic applications.

Electrical and optical characterization of surface passivation in GaAs nanowires.

PubMed

Chang, Chia-Chi; Chi, Chun-Yung; Yao, Maoqing; Huang, Ningfeng; Chen, Chun-Chung; Theiss, Jesse; Bushmaker, Adam W; Lalumondiere, Stephen; Yeh, Ting-Wei; Povinelli, Michelle L; Zhou, Chongwu; Dapkus, P Daniel; Cronin, Stephen B

2012-09-12

We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the continuous-wave PL intensity is observed on the same individual nanowire with and without the Al(x)Ga(1-x)As passivation layer, indicating a significant reduction in surface recombination. These results indicate that, in passivated nanowires, the minority carrier lifetime is not limited by twin stacking faults. From the PL lifetime and minority carrier diffusion length, we estimate the surface recombination velocity (SRV) to range from 1.7 × 10(3) to 1.1 × 10(4) cm·s(-1), and the minority carrier mobility μ is estimated to lie in the range from 10.3 to 67.5 cm(2) V(-1) s(-1) for the passivated nanowires.

Apparatus and method of manufacture for an imager equipped with a cross-talk barrier

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2012-01-01

An imager apparatus and associated starting material are provided. In one embodiment, an imager is provided including a silicon layer of a first conductivity type acting as a junction anode. Such silicon layer is adapted to convert light to photoelectrons. Also included is a semiconductor well of a second conductivity type formed in the silicon layer for acting as a junction cathode. Still yet, a barrier is formed adjacent to the semiconductor well. In another embodiment, a starting material is provided including a first silicon layer and an oxide layer disposed adjacent to the first silicon layer. Also included is a second silicon layer disposed adjacent to the oxide layer opposite the first silicon layer. Such second silicon layer is further equipped with an associated passivation layer and/or barrier.

A new design of dielectric elastomer membrane resonator with tunable resonant frequencies and mode shapes

NASA Astrophysics Data System (ADS)

Li, Yunlong; Oh, Inkyu; Chen, Jiehao; Hu, Yuhang

2018-06-01

Conventional membrane resonators are bulky, and once the geometries and materials are fixed in the fabricated device, the resonators’ characteristics are fixed. In this work, we introduce the active membrane, dielectric elastomer (DE), into the resonator design. Attaching a stiffer passive membrane onto the active DE membrane forms a two-layer system, which generates an out-of-plane deformation when the DE is actuated through a DC voltage applied across the thickness of the DE membrane. When an AC voltage is applied, the two-layer system can generate an out-of-plane oscillation which enables its use as membrane resonators. Both experiments and simulations are carried out to study the dynamic characteristics of the system. The resonant frequencies and mode shapes of the resonator can be tuned through the passive layer properties such as the modulus, thickness, density, and size. The effective stiffness of the DE film changes as the magnitude of the voltage applied on the film changes, which provides an active way to tune the dynamic characteristics of the two-layer resonator even after the device is set. The system is also light weight, low cost, and easy to fabricate, and has great potential in many engineering applications.

Influence of deposition temperature of thermal ALD deposited Al{sub 2}O{sub 3} films on silicon surface passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir

2015-06-15

The effect of deposition temperature (T{sub dep}) and subsequent annealing time (t{sub anl}) of atomic layer deposited aluminum oxide (Al{sub 2}O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, Q{sub F}. The interface defect density (D{sub it}) decreases with increase in T{sub dep} which further decreases with t{sub anl} up to 100s. An effective surface passivation (SRV<8 cm/s) is realized for T{sub dep} ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized bymore » high thermal budget process (t{sub anl} between 10 to 30 min)« less

Blended Wing Body (BWB) Boundary Layer Ingestion (BLI) Inlet Configuration and System Studies

NASA Technical Reports Server (NTRS)

Kawai, Ronald T.; Friedman, Douglas M.; Serrano, Leonel

2006-01-01

A study was conducted to determine the potential reduction in fuel burned for BLI (boundary layer ingestion) inlets on a BWB (blended wing body) airplane employing AFC (active flow control). The BWB is a revolutionary type airplane configuration with engines on the aft upper surface where thick boundary layer offers the greatest opportunity for ram drag reduction. AFC is an emerging technology for boundary layer control. Several BLI inlet configurations were analyzed in the NASA-developed RANS Overflow CFD code. The study determined that, while large reductions in ram drag result from BLI, lower inlet pressure recovery produces engine performance penalties that largely offset this ram drag reduction. AFC could, however, enable a short BLI inlet that allows surface mounting of the engine which, when coupled with a short diffuser, would significantly reduce drag and weight for a potential 10% reduction in fuel burned. Continuing studies are therefore recommended to achieve this reduction in fuel burned considering the use of more modest amounts of BLI coupled with both AFC and PFC (Passive Flow Control) to produce a fail-operational system.

Spectroscopic ellipsometric characterization of Si/Si(1-x)Ge(x) strained-layer superlattices

NASA Technical Reports Server (NTRS)

Yao, H.; Woollam, J. A.; Wang, P. J.; Tejwani, M. J.; Alterovitz, S. A.

1993-01-01

Spectroscopic ellipsometry (SE) was employed to characterize Si/Si(1-x)Ge(x) strained-layer superlattices. An algorithm was developed, using the available optical constants measured at a number of fixed x values of Ge composition, to compute the dielectric function spectrum of Si(1-x)Ge(x) at an arbitrary x value in the spectral range 17 to 5.6 eV. The ellipsometrically determined superlattice thicknesses and alloy compositional fractions were in excellent agreement with results from high-resolution x ray diffraction studies. The silicon surfaces of the superlattices were subjected to a 9:1 HF cleaning prior to the SE measurements. The HF solution removed silicon oxides on the semiconductor surface, and terminated the Si surface with hydrogen-silicon bonds, which were monitored over a period of several weeks, after the HF cleaning, by SE measurements. An equivalent dielectric layer model was established to describe the hydrogen-terminated Si surface layer. The passivated Si surface remained unchanged for greater than 2 h, and very little surface oxidation took place even over 3 to 4 days.

Electron drag in ferromagnetic structures separated by an insulating interface

NASA Astrophysics Data System (ADS)

Kozub, V. I.; Muradov, M. I.; Galperin, Y. M.

2018-06-01

We consider electron drag in a system of two ferromagnetic layers separated by an insulating interface. The source of it is expected to be magnon-electron interactions. Namely, we assume that the external voltage is applied to the "active" layer stimulating electric current through this layer. In its turn, the scattering of the current-carrying electrons by magnons leads to a magnon drag current within this layer. The 3-magnons interactions between magnons in the two layers (being of non-local nature) lead to magnon drag within the "passive" layer which, correspondingly, produce electron drag current via processes of magnon-electron scattering. We estimate the drag current and compare it to the phonon-induced one.

Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters

DOEpatents

Wanlass, Mark W.

2001-01-01

A low-bandgap, double-heterostructure PV device is provided, including in optical alignment a first InP.sub.1-y As.sub.y n-layer formed with an n-type dopant, an Ga.sub.x In.sub.1-x As absorber layer, the absorber layer having an n-region formed with an n-type dopant and an p-region formed with a p-type dopant to form a single pn-junction, and a second InP.sub.1-y As.sub.y p-layer formed with a p-type dopant, wherein the first and second layers are used for passivation and minority carrier confinement of the absorber layers.

Surface Passivation of InAs(001) With Thioacetamide

DTIC Science & Technology

2005-01-01

Fitting and quantitative analysis of the In 3d data are described in detail elsewhere.9 Oxidation of As requires breaching the top two layers of the S...ACS or HPLC grade used with- out additional purificationd. The average S coverage after these exposures was reduced by ᝿% compared to as- passivated...embedding one-half of an InAs sample in freshly cast polydimethylsiloxane sPDMSd followed by hardening the PDMS overnight at room tem- perature. After 30

Passively cooled direct drive wind turbine

DOEpatents

Costin, Daniel P [Chelsea, VT

2008-03-18

A wind turbine is provided that passively cools an electrical generator. The wind turbine includes a plurality of fins arranged peripherally around a generator house. Each of the fins being oriented at an angle greater than zero degrees to allow parallel flow of air over the fin. The fin is further tapered to allow a constant portion of the fin to extend beyond the air stream boundary layer. Turbulence initiators on the nose cone further enhance heat transfer at the fins.

Characterization of Passive Flow-Actuated Microflaps Inspired by Shark Skin for Separation Control

NASA Astrophysics Data System (ADS)

Morris, Jackson; Devey, Sean; Lang, Amy; Hubner, Paul

2017-11-01

Thanks to millions of years of natural selection, sharks have evolved into quick apex predators. Previous research has proven shark skin to reduce flow separation, which would result in lower pressure drag. Mako shark skin is made up of microscopic scales on the order of 0.2 mm in size. These scales are hypothesized to be a flow control mechanism, capable of being passively actuated by reversed flow. We believe shark scales are strategically sized to interact with the lower 5 percent of the boundary layer, where reversed flow occurs near the wall. Previous wind tunnel research has shown that it is possible to passively actuate 2D flaps in the lower regions of the boundary layer. This research aims to identify reverse flow conditions that will cause small 3D flaps to actuate. Several sets of microflaps (about 4 mm in length) geometrically similar to shark scales were 3D printed. These microflaps were tested in a low-speed wind tunnel in various reverse flow conditions. Microflaps were observed to be actuated by the reversing flow and flow conditions were characterized using a hot-wire probe. These microflaps have the potential to mimic the mako shark type of flow control in air, passively actuated by reverse flow conditions. This research was supported by Boeing, the US Army, and the National Science Foundation REU program.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meinke, Rainer B.; Goodzeit, Carl L.; Ball, Millicent J.

This research project advanced the development of reliable, cost-effective arrays of superconducting quadrupole magnets for use in multi-beam inertial fusion accelerators. The field in each array cell must be identical and meet stringent requirements for field quality and strength. An optimized compact array design using flat double-layer pancake coils was developed. Analytical studies of edge termination methods showed that it is feasible to meet the requirements for field uniformity in all cells and elimination of stray external field in several ways: active methods that involve placement of field compensating coils on the periphery of the array or a passive methodmore » that involves use of iron shielding.« less