Passive fault current limiting device

DOEpatents

Evans, D.J.; Cha, Y.S.

1999-04-06

A passive current limiting device and isolator is particularly adapted for use at high power levels for limiting excessive currents in a circuit in a fault condition such as an electrical short. The current limiting device comprises a magnetic core wound with two magnetically opposed, parallel connected coils of copper, a high temperature superconductor or other electrically conducting material, and a fault element connected in series with one of the coils. Under normal operating conditions, the magnetic flux density produced by the two coils cancel each other. Under a fault condition, the fault element is triggered to cause an imbalance in the magnetic flux density between the two coils which results in an increase in the impedance in the coils. While the fault element may be a separate current limiter, switch, fuse, bimetal strip or the like, it preferably is a superconductor current limiter conducting one-half of the current load compared to the same limiter wired to carry the total current of the circuit. The major voltage during a fault condition is in the coils wound on the common core in a preferred embodiment. 6 figs.

Hybrid finite element/waveguide mode analysis of passive RF devices

NASA Astrophysics Data System (ADS)

McGrath, Daniel T.

1993-07-01

A numerical solution for time-harmonic electromagnetic fields in two-port passive radio frequency (RF) devices has been developed, implemented in a computer code, and validated. Vector finite elements are used to represent the fields in the device interior, and field continuity across waveguide apertures is enforced by matching the interior solution to a sum of waveguide modes. Consequently, the mesh may end at the aperture instead of extending into the waveguide. The report discusses the variational formulation and its reduction to a linear system using Galerkin's method. It describes the computer code, including its interface to commercial CAD software used for geometry generation. It presents validation results for waveguide discontinuities, coaxial transitions, and microstrip circuits. They demonstrate that the method is an effective and versatile tool for predicting the performance of passive RF devices.

Passive electrically switchable circuit element having improved tunability and method for its manufacture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mickel, Patrick R; James, Conrad D

2014-09-16

A resistive switching device and methods for making the same are disclosed. In the above said device, a resistive switching layer is interposed between opposing electrodes. The resistive switching layer comprises at least two sub-layers of switchable insulative material characterized by different ionic mobilities.

Coplanar monolithic integrated circuits for low-noise communication and radar systems

NASA Astrophysics Data System (ADS)

Bessemoulin, Alexandre; Verweyen, Ludger; Marsetz, Waldemar; Massler, Hermann; Neumann, Markus; Hulsmann, Axel; Schlechtweg, Michael

1999-12-01

This paper presents coplanar millimeter-wave monolithic integrated circuits with high performance and small size for use in low noise communication and radar system applications. Technology and modeling issues with respect to active and passive elements are discussed first. In a second step, the potential of coplanar waveguides to realize compact ICs is illustrated through various design examples, such as low noise amplifiers, mixers and power amplifiers. The performance of multifunctional ICs is also presented by comparing simulated and measured results for a complete 77 GHz Transceive MMIC.

Methods and apparatus for switching a transponder to an active state, and asset management systems employing same

NASA Technical Reports Server (NTRS)

Mickle, Marlin H. (Inventor); Jones, Alex K. (Inventor); Cain, James T. (Inventor); Hawrylak, Peter J. (Inventor); Marx, Frank (Inventor); Hoare, Raymond R. (Inventor)

2012-01-01

A transponder that may be used as an RFID tag includes a passive circuit to eliminate the need for an "always on" active RF receiving element to anticipate a wake-up signal for the balance of the transponder electronics. This solution allows the entire active transponder to have all circuit elements in a sleep (standby) state, thus drastically extending battery life or other charge storage device life. Also, a wake-up solution that reduces total energy consumption of an active transponder system by allowing all non-addressed transponders to remain in a sleep (standby) state, thereby reducing total system or collection energy. Also, the transponder and wake-up solution are employed in an asset tracking system.

Methods and apparatus for switching a transponder to an active state, and asset management systems employing same

NASA Technical Reports Server (NTRS)

Mickle, Marlin H. (Inventor); Jones, Alex K. (Inventor); Cain, James T. (Inventor); Hawrylak, Peter J. (Inventor); Marx, Frank (Inventor); Hoare, Raymond R. (Inventor)

2011-01-01

A transponder that may be used as an RFID tag includes a passive circuit to eliminate the need for an "always on" active RF receiving element to anticipate a wake-up signal for the balance of the transponder electronics. This solution allows the entire active transponder to have all circuit elements in a sleep (standby) state, thus drastically extending battery life or other charge storage device life. Also, a wake-up solution that reduces total energy consumption of an active transponder system by allowing all non-addressed transponders to remain in a sleep (standby) state, thereby reducing total system or collection energy. Also, the transponder and wake-up solution are employed in an asset tracking system.

A disorder-based strategy for tunable, broadband wave attenuation

NASA Astrophysics Data System (ADS)

Zhang, Weiting; Celli, Paolo; Cardella, Davide; Gonella, Stefano

2017-04-01

One of the most daunting limitations of phononic crystals and acoustic/elastic metamaterials is their passivity: a given configuration is bound to display its phononic properties only around its design point, i.e., working at some pre-determined operating conditions. In the past decade, this shortcoming has inspired the design of phononic media with tunable wave characteristics; noteworthy results have been obtained through a family of methodologies involving shunted piezoelectric elements. Shunting a piezoelectric element means connecting it to a passive electric circuit; tunability stems from the ability to modify the effective mechanical properties of the piezoelectric medium by modifying the circuit characteristics. One of the most popular shunting circuits is the resistor-inductor, which allows the patch-and-shunt system to behave as an electromechanical resonator. A common motif among the works employing shunted piezos for phononic control is periodicity: the patches are typically periodically placed in the domain and the circuits are identically tuned. The objective of this work is to demonstrate that the wave attenuation performance of structures with shunted piezoelectric patches can be improved by leveraging notions of organized disorder. Based on the idea of rainbow trapping broadband wave attenuation obtained by tuning an array of resonators at distinct neighboring frequencies we design and test an electromechanical waveguide structure capable of attenuating waves over broad frequency ranges. In order to emphasize the fact that periodicity is not a binding requirement when working with RL shunts (which induce locally resonant bandgaps), we report on the performance of random arrangements of patches. In an attempt to demonstrate the tunability attribute of our strategy, we take advantage of the reconfigurability of the circuits to show how a single waveguide can attenuate both waves and vibrations over different frequency ranges.

Passively Shunted Piezoelectric Damping of Centrifugally-Loaded Plates

NASA Technical Reports Server (NTRS)

Duffy, Kirsten P.; Provenza, Andrew J.; Trudell, Jeffrey J.; Min, James B.

2009-01-01

Researchers at NASA Glenn Research Center have been investigating shunted piezoelectric circuits as potential damping treatments for turbomachinery rotor blades. This effort seeks to determine the effects of centrifugal loading on passively-shunted piezoelectric - damped plates. Passive shunt circuit parameters are optimized for the plate's third bending mode. Tests are performed both non-spinning and in the Dynamic Spin Facility to verify the analysis, and to determine the effectiveness of the damping under centrifugal loading. Results show that a resistive shunt circuit will reduce resonant vibration for this configuration. However, a tuned shunt circuit will be required to achieve the desired damping level. The analysis and testing address several issues with passive shunt circuit implementation in a rotating system, including piezoelectric material integrity under centrifugal loading, shunt circuit implementation, and tip mode damping.

Second Law based definition of passivity/activity of devices

NASA Astrophysics Data System (ADS)

Sundqvist, Kyle M.; Ferry, David K.; Kish, Laszlo B.

2017-10-01

Recently, our efforts to clarify the old question, if a memristor is a passive or active device [1], triggered debates between engineers, who have had advanced definitions of passivity/activity of devices, and physicists with significantly different views about this seemingly simple question. This debate triggered our efforts to test the well-known engineering concepts about passivity/activity in a deeper way, challenging them by statistical physics. It is shown that the advanced engineering definition of passivity/activity of devices is self-contradictory when a thermodynamical system executing Johnson-Nyquist noise is present. A new, statistical physical, self-consistent definition based on the Second Law of Thermodynamics is introduced. It is also shown that, in a system with uniform temperature distribution, any rectifier circuitry that can rectify thermal noise must contain an active circuit element, according to both the engineering and statistical physical definitions.

A CMOS Humidity Sensor for Passive RFID Sensing Applications

PubMed Central

Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

2014-01-01

This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 μW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs. PMID:24841250

A CMOS humidity sensor for passive RFID sensing applications.

PubMed

Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

2014-05-16

This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

MEMS: A new approach to micro-optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sniegowski, J.J.

1997-12-31

MicroElectroMechanical Systems (MEMS) and their fabrication technologies provide great opportunities for application to micro-optical systems (MOEMS). Implementing MOEMS technology ranges from simple, passive components to complicated, active systems. Here, an overview of polysilicon surface micromachining MEMS combined with optics is presented. Recent advancements to the technology, which may enhance its appeal for micro-optics applications are emphasized. Of all the MEMS fabrication technologies, polysilicon surface micromachining technology has the greatest basis in and leverages the most the infrastructure for silicon integrated circuit fabrication. In that respect, it provides the potential for very large volume, inexpensive production of MOEMS. This paper highlightsmore » polysilicon surface micromachining technology in regards to its capability to provide both passive and active mechanical elements with quality optical elements.« less

Quantum optics of lossy asymmetric beam splitters.

PubMed

Uppu, Ravitej; Wolterink, Tom A W; Tentrup, Tristan B H; Pinkse, Pepijn W H

2016-07-25

We theoretically investigate quantum interference of two single photons at a lossy asymmetric beam splitter, the most general passive 2×2 optical circuit. The losses in the circuit result in a non-unitary scattering matrix with a non-trivial set of constraints on the elements of the scattering matrix. Our analysis using the noise operator formalism shows that the loss allows tunability of quantum interference to an extent not possible with a lossless beam splitter. Our theoretical studies support the experimental demonstrations of programmable quantum interference in highly multimodal systems such as opaque scattering media and multimode fibers.

Memristor emulator causes dissimilarity on a coupled memristive systems

NASA Astrophysics Data System (ADS)

Sabarathinam, S.; Prasad, Awadhesh

2018-04-01

The memristor is known as abasic fourth passive solid state circuit element. Itgaining increasing attention to create the next generation electronic devices commonly used as fundamental chaotic circuit although often arbitrary (typically piecewise linear or cubic) fluxcharge characteristics. In thispresent work, the causes of the memristor emulator studied in a coupled memristive chaoticoscillator for the first time. We confirm that the emulator that allows synchronization between theoscillators and cause the dissimilarity between the systems when increasing the couplingstrength, and co-efficient of the memristor emulator. The detailed statistical analysis was performed to confirm such phenomenon.

Space mapping method for the design of passive shields

NASA Astrophysics Data System (ADS)

Sergeant, Peter; Dupré, Luc; Melkebeek, Jan

2006-04-01

The aim of the paper is to find the optimal geometry of a passive shield for the reduction of the magnetic stray field of an axisymmetric induction heater. For the optimization, a space mapping algorithm is used that requires two models. The first is an accurate model with a high computational effort as it contains finite element models. The second is less accurate, but it has a low computational effort as it uses an analytical model: the shield is replaced by a number of mutually coupled coils. The currents in the shield are found by solving an electrical circuit. Space mapping combines both models to obtain the optimal passive shield fast and accurately. The presented optimization technique is compared with gradient, simplex, and genetic algorithms.

Computationally Efficient Modeling and Simulation of Large Scale Systems

NASA Technical Reports Server (NTRS)

Jain, Jitesh (Inventor); Koh, Cheng-Kok (Inventor); Balakrishnan, Vankataramanan (Inventor); Cauley, Stephen F (Inventor); Li, Hong (Inventor)

2014-01-01

A system for simulating operation of a VLSI interconnect structure having capacitive and inductive coupling between nodes thereof, including a processor, and a memory, the processor configured to perform obtaining a matrix X and a matrix Y containing different combinations of passive circuit element values for the interconnect structure, the element values for each matrix including inductance L and inverse capacitance P, obtaining an adjacency matrix A associated with the interconnect structure, storing the matrices X, Y, and A in the memory, and performing numerical integration to solve first and second equations.

Extended Range Passive Wireless Tag System and Method

NASA Technical Reports Server (NTRS)

Fink, Patrick W. (Inventor); Lin, Gregory Y. (Inventor); Kennedy, Timothy F. (Inventor)

2013-01-01

A passive wireless tag assembly comprises a plurality of antennas and transmission lines interconnected with circuitry and constructed and arranged in a Van Atta array or configuration to reflect an interrogator signal in the direction from where it came. The circuitry may comprise at least one surface acoustic wave (SAW)-based circuit that functions as a signal reflector and is operatively connected with an information circuit. In another embodiment, at least one delay circuit and/or at least one passive modulation circuit(s) are utilized. In yet another embodiment, antennas connected to SAW-based devices are mounted to at least one of the orthogonal surfaces of a corner reflector.

Modelling nonlinearity in piezoceramic transducers: From equations to nonlinear equivalent circuits.

PubMed

Parenthoine, D; Tran-Huu-Hue, L-P; Haumesser, L; Vander Meulen, F; Lematre, M; Lethiecq, M

2011-02-01

Quadratic nonlinear equations of a piezoelectric element under the assumptions of 1D vibration and weak nonlinearity are derived by the perturbation theory. It is shown that the nonlinear response can be represented by controlled sources that are added to the classical hexapole used to model piezoelectric ultrasonic transducers. As a consequence, equivalent electrical circuits can be used to predict the nonlinear response of a transducer taking into account the acoustic loads on the rear and front faces. A generalisation of nonlinear equivalent electrical circuits to cases including passive layers and propagation media is then proposed. Experimental results, in terms of second harmonic generation, on a coupled resonator are compared to theoretical calculations from the proposed model. Copyright © 2010 Elsevier B.V. All rights reserved.

Tunable Universal Filter with Current Follower and Transconductance Amplifiers and Study of Parasitic Influences

NASA Astrophysics Data System (ADS)

Jeřábek, Jan; Šotner, Roman; Vrba, Kamil

2011-11-01

A universal filter with dual-output current follower (DO-CF), two transconductance amplifiers (OTAs) and two passive elements is presented in this paper. The filter is tunable, of the single-input multiple-output (SIMO) type, and operates in the current mode. Our solution utilizes a low-impedance input node and high-impedance outputs. All types of the active elements used can be realized using our UCC-N1B 0520 integrated circuit and therefore the paper contains not only simulation results that were obtained with the help of behavioral model of the UCC-N1B 0520 element, but also the characteristics that were gained by measurement with the mentioned circuit. The presented simulation and measurement results prove the quality of designed filter. Similar multi-loop structures are very-well known, but there are some drawbacks that are not discussed in similar papers. This paper also contains detailed study of parasitic influences on the filter performance.

Athermalization of resonant optical devices via thermo-mechanical feedback

DOEpatents

Rakich, Peter; Nielson, Gregory N.; Lentine, Anthony L.

2016-01-19

A passively athermal photonic system including a photonic circuit having a substrate and an optical cavity defined on the substrate, and passive temperature-responsive provisions for inducing strain in the optical cavity of the photonic circuit to compensate for a thermo-optic effect resulting from a temperature change in the optical cavity of the photonic circuit. Also disclosed is a method of passively compensating for a temperature dependent thermo-optic effect resulting on an optical cavity of a photonic circuit including the step of passively inducing strain in the optical cavity as a function of a temperature change of the optical cavity thereby producing an elasto-optic effect in the optical cavity to compensate for the thermo-optic effect resulting on an optical cavity due to the temperature change.

Flow microcapillary plasma mass spectrometry-based investigation of new Al-Cr-Fe complex metallic alloy passivation.

PubMed

Ott, N; Beni, A; Ulrich, A; Ludwig, C; Schmutz, P

2014-03-01

Al-Cr-Fe complex metallic alloys are new intermetallic phases with low surface energy, low friction, and high corrosion resistance down to very low pH values (0-2). Flow microcapillary plasma mass spectrometry under potentiostatic control was used to characterize the dynamic aspect of passivation of an Al-Cr-Fe gamma phase in acidic electrolytes, allowing a better insight on the parameters inducing chemical stability at the oxyhydroxide-solution interface. In sulfuric acid pH 0, low element dissolution rates (in the µg cm(-2) range after 60 min) evidenced the passive state of the Al-Cr-Fe gamma phase with a preferential over-stoichiometric dissolution of Al and Fe cations. Longer air-aging was found to be beneficial for stabilizing the passive film. In chloride-containing electrolytes, ten times higher Al dissolution rates were detected at open-circuit potential (OCP), indicating that the spontaneously formed passive film becomes unstable. However, electrochemical polarization at low passive potentials induces electrical field generated oxide film modification, increasing chemical stability at the oxyhydroxide-solution interface. In the high potential passive region, localized attack is initiated with subsequent active metal dissolution. © 2013 Published by Elsevier B.V.

Passive and electro-optic polymer photonics and InP electronics integration

NASA Astrophysics Data System (ADS)

Zhang, Z.; Katopodis, V.; Groumas, P.; Konczykowska, A.; Dupuy, J.-.; Beretta, A.; Dede, A.; Miller, E.; Choi, J. H.; Harati, P.; Jorge, F.; Nodjiadjim, V.; Dinu, R.; Cangini, G.; Vannucci, A.; Felipe, D.; Maese-Novo, A.; Keil, N.; Bach, H.-.; Schell, Martin; Avramopoulos, H.; Kouloumentas, Ch.

2015-05-01

Hybrid photonic integration allows individual components to be developed at their best-suited material platforms without sacrificing the overall performance. In the past few years a polymer-enabled hybrid integration platform has been established, comprising 1) EO polymers for constructing low-complexity and low-cost Mach-Zehnder modulators (MZMs) with extremely high modulation bandwidth; 2) InP components for light sources, detectors, and high-speed electronics including MUX drivers and DEMUX circuits; 3) Ceramic (AIN) RF board that links the electronic signals within the package. On this platform, advanced optoelectronic modules have been demonstrated, including serial 100 Gb/s [1] and 2x100 Gb/s [2] optical transmitters, but also 400 Gb/s optoelectronic interfaces for intra-data center networks [3]. To expand the device functionalities to an unprecedented level and at the same time improve the integration compatibility with diversified active / passive photonic components, we have added a passive polymer-based photonic board (polyboard) as the 4th material system. This passive polyboard allows for low-cost fabrication of single-mode waveguide networks, enables fast and convenient integration of various thin-film elements (TFEs) to control the light polarization, and provides efficient thermo-optic elements (TOEs) for wavelength tuning, light amplitude regulation and light-path switching.

Hybridization of active and passive elements for planar photonic components and interconnects

NASA Astrophysics Data System (ADS)

Pearson, M.; Bidnyk, S.; Balakrishnan, A.

2007-02-01

The deployment of Passive Optical Networks (PON) for Fiber-to-the-Home (FTTH) applications currently represents the fastest growing sector of the telecommunication industry. Traditionally, FTTH transceivers have been manufactured using commodity bulk optics subcomponents, such as thin film filters (TFFs), micro-optic collimating lenses, TO-packaged lasers, and photodetectors. Assembling these subcomponents into a single housing requires active alignment and labor-intensive techniques. Today, the majority of cost reducing strategies using bulk subcomponents has been implemented making future reductions in the price of manufacturing FTTH transceivers unlikely. Future success of large scale deployments of FTTH depends on further cost reductions of transceivers. Realizing the necessity of a radically new packaging approach for assembly of photonic components and interconnects, we designed a novel way of hybridizing active and passive elements into a planar lightwave circuit (PLC) platform. In our approach, all the filtering components were monolithically integrated into the chip using advancements in planar reflective gratings. Subsequently, active components were passively hybridized with the chip using fully-automated high-capacity flip-chip bonders. In this approach, the assembly of the transceiver package required no active alignment and was readily suitable for large-scale production. This paper describes the monolithic integration of filters and hybridization of active components in both silica-on-silicon and silicon-on-insulator PLCs.

Liquid metal cooled nuclear reactors with passive cooling system

DOEpatents

Hunsbedt, Anstein; Fanning, Alan W.

1991-01-01

A liquid metal cooled nuclear reactor having a passive cooling system for removing residual heat resulting from fuel decay during reactor shutdown. The passive cooling system comprises a plurality of cooling medium flow circuits which cooperate to remove and carry heat away from the fuel core upon loss of the normal cooling flow circuit to areas external thereto.

Mouldable all-carbon integrated circuits

NASA Astrophysics Data System (ADS)

Sun, Dong-Ming; Timmermans, Marina Y.; Kaskela, Antti; Nasibulin, Albert G.; Kishimoto, Shigeru; Mizutani, Takashi; Kauppinen, Esko I.; Ohno, Yutaka

2013-08-01

A variety of plastic products, ranging from those for daily necessities to electronics products and medical devices, are produced by moulding techniques. The incorporation of electronic circuits into various plastic products is limited by the brittle nature of silicon wafers. Here we report mouldable integrated circuits for the first time. The devices are composed entirely of carbon-based materials, that is, their active channels and passive elements are all fabricated from stretchable and thermostable assemblies of carbon nanotubes, with plastic polymer dielectric layers and substrates. The all-carbon thin-film transistors exhibit a mobility of 1,027cm2V-1s-1 and an ON/OFF ratio of 105. The devices also exhibit extreme biaxial stretchability of up to 18% when subjected to thermopressure forming. We demonstrate functional integrated circuits that can be moulded into a three-dimensional dome. Such mouldable electronics open new possibilities by allowing for the addition of electronic/plastic-like functionalities to plastic/electronic products, improving their designability.

Mouldable all-carbon integrated circuits.

PubMed

Sun, Dong-Ming; Timmermans, Marina Y; Kaskela, Antti; Nasibulin, Albert G; Kishimoto, Shigeru; Mizutani, Takashi; Kauppinen, Esko I; Ohno, Yutaka

2013-01-01

A variety of plastic products, ranging from those for daily necessities to electronics products and medical devices, are produced by moulding techniques. The incorporation of electronic circuits into various plastic products is limited by the brittle nature of silicon wafers. Here we report mouldable integrated circuits for the first time. The devices are composed entirely of carbon-based materials, that is, their active channels and passive elements are all fabricated from stretchable and thermostable assemblies of carbon nanotubes, with plastic polymer dielectric layers and substrates. The all-carbon thin-film transistors exhibit a mobility of 1,027 cm(2) V(-1) s(-1) and an ON/OFF ratio of 10(5). The devices also exhibit extreme biaxial stretchability of up to 18% when subjected to thermopressure forming. We demonstrate functional integrated circuits that can be moulded into a three-dimensional dome. Such mouldable electronics open new possibilities by allowing for the addition of electronic/plastic-like functionalities to plastic/electronic products, improving their designability.

Readout electronics for LGAD sensors

NASA Astrophysics Data System (ADS)

Alonso, O.; Franch, N.; Canals, J.; Palacio, F.; López, M.; Vilà, A.; Diéguez, A.; Carulla, M.; Flores, D.; Hidalgo, S.; Merlos, A.; Pellegrini, G.; Quirion, D.

2017-02-01

In this paper, an ASIC fabricated in 180 nm CMOS technology from AMS with the very front-end electronics used to readout LGAD sensors is presented as well as its experimental results. The front-end has the typical architecture for Si-strip readout, i.e., preamplification stage with a Charge Sensitive Amplifier (CSA) followed by a CR-RC shaper. Both amplifiers are based on a folded cascode structure with a PMOS input transistor and the shaper only uses passive elements for the feedback stage. The CSA has programmable gain and a configurable input stage in order to adapt to the different input capacitance of the LGAD sensors (pixelated, short and long strips) and to the different input signal (depending on the gain of the LGAD). The fabricated prototype has an area of 0.865 mm × 0.965 mm and includes the biasing circuit for the CSA and the shaper, 4 analog channels (CSA+shaper) and programmable charge injection circuits included for testing purposes. Noise and power analysis performed during simulation fixed the size of the input transistor to W/L = 860 μm/0.2 μm. The shaping time is fixed by design at 1 us and, in this ASIC version, the feedback elements of the shaper are passive, which means that the area of the shaper can be reduced using active elements in future versions. Finally, the different gains of the CSA have been selected to maintain an ENC below 400 electrons for a detector capacitor of 20 pF, with a power consumption of 150 μ W per channel.

Diffraction limited focusing and routing of gap plasmons by a metal-dielectric-metal lens

DOE PAGES

Dennis, Brian S.; Czaplewski, David A.; Haftel, Michael I.; ...

2015-08-12

Passive optical elements can play key roles in photonic applications such as plasmonic integrated circuits. Here we experimentally demonstrate passive gap-plasmon focusing and routing in two-dimensions. This is accomplished using a high numerical-aperture metal-dielectric-metal lens incorporated into a planar-waveguide device. Fabrication via metal sputtering, oxide deposition, electron- and focused-ion- beam lithography, and argon ion-milling is reported on in detail. Diffraction-limited focusing is optically characterized by sampling out-coupled light with a microscope. The measured focal distance and full-width-half-maximum spot size agree well with the calculated lens performance. The surface plasmon polariton propagation length is measured by sampling light from multiple out-couplermore » slits.« less

Vibration reduction of a woven composite fan blade by piezoelectric shunted devices

NASA Astrophysics Data System (ADS)

Thierry, Olivier; De Smet, Olivier; Deü, Jean-François

2016-09-01

This study concerns the vibration reduction in the low frequency range of a composite fan blade of a turbojet engine with piezoelectric devices. The interest is to increase lifespan and avoid flutter phenomena by reducing the vibration amplitude. The solution considered in the work consists in using piezoelectric elements connected to a passive electric circuit usually called shunt. The use of woven composite materials for fan blades enables to plan on embedding piezoelectric materials, for instance in the form of patches inserted between the composite and the coating material. The work presented during this conference will illustrate the feasibility of a piezoelectric shunted device integrated in an industrial application that doesn't require electrical supply. For such a structure, it is shown that a purely passive resonant shunt can significantly reduce the level of vibration of the second bending mode and that a good correlation between experiments and simulations validates the best fitting finite element model.

Development of chip passivated monolithic complementary MISFET circuits with beam leads

NASA Technical Reports Server (NTRS)

Ragonese, L. J.; Kim, M. J.; Corrie, B. L.; Brouillette, J. W.; Warr, R. E.

1972-01-01

The results are presented of a program to demonstrate the processes for fabricating complementary MISFET beam-leaded circuits, which, potentially, are comparable in quality to available bipolar beam-lead chips that use silicon nitride passivation in conjunction with a platinum-titanium-gold metal system. Materials and techniques, different from the bipolar case, were used in order to be more compatible with the special requirements of fully passivated complementary MISFET devices. Two types of circuits were designed and fabricated, a D-flip-flop and a three-input NOR/NAND gate. Fifty beam-leaded chips of each type were constructed. A quality and reliability assurance program was performed to identify failure mechanisms. Sample tests and inspections (including destructive) were developed to measure the physical characteristics of the circuits.

Passive cooling safety system for liquid metal cooled nuclear reactors

DOEpatents

Hunsbedt, Anstein; Boardman, Charles E.; Hui, Marvin M.; Berglund, Robert C.

1991-01-01

A liquid metal cooled nuclear reactor having a passive cooling system for removing residual heat resulting from fuel decay during reactor shutdown. The passive cooling system comprises a plurality of partitions surrounding the reactor vessel in spaced apart relation forming intermediate areas for circulating heat transferring fluid which remove and carry away heat from the reactor vessel. The passive cooling system includes a closed primary fluid circuit through the partitions surrounding the reactor vessel and a partially adjoining secondary open fluid circuit for carrying transferred heat out into the atmosphere.

Indirect passive cooling system for liquid metal cooled nuclear reactors

DOEpatents

Hunsbedt, Anstein; Boardman, Charles E.

1990-01-01

A liquid metal cooled nuclear reactor having a passive cooling system for removing residual heat resulting from fuel decay during reactor shutdown. The passive cooling system comprises a plurality of partitions surrounding the reactor vessel in spaced apart relation forming intermediate areas for circulating heat transferring fluid which remove and carry away heat from the reactor vessel. The passive cooling system includes a closed primary fluid circuit through the partitions surrounding the reactor vessel and a partially adjoining secondary open fluid circuit for carrying transferred heat out into the atmosphere.

Roles of epsilon-near-zero (ENZ) and mu-near-zero (MNZ) materials in optical metatronic circuit networks.

PubMed

Abbasi, Fereshteh; Engheta, Nader

2014-10-20

The concept of metamaterial-inspired nanocircuits, dubbed metatronics, was introduced in [Science 317, 1698 (2007); Phys. Rev. Lett. 95, 095504 (2005)]. It was suggested how optical lumped elements (nanoelements) can be made using subwavelength plasmonic or non-plasmonic particles. As a result, the optical metatronic equivalents of a number of electronic circuits, such as frequency mixers and filters, were suggested. In this work we further expand the concept of electronic lumped element networks into optical metatronic circuits and suggest a conceptual model applicable to various metatronic passive networks. In particular, we differentiate between the series and parallel networks using epsilon-near-zero (ENZ) and mu-near-zero (MNZ) materials. We employ layered structures with subwavelength thicknesses for the nanoelements as the building blocks of collections of metatronic networks. Furthermore, we explore how by choosing the non-zero constitutive parameters of the materials with specific dispersions, either Drude or Lorentzian dispersion with suitable parameters, capacitive and inductive responses can be achieved in both series and parallel networks. Next, we proceed with the one-to-one analogy between electronic circuits and optical metatronic filter layered networks and justify our analogies by comparing the frequency response of the two paradigms. Finally, we examine the material dispersion of near-zero relative permittivity as well as other physically important material considerations such as losses.

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT

NASA Technical Reports Server (NTRS)

Pinsukanjana, Paul R.; Samoska, Lorene A.; Gaier, Todd C.; Smith, R. Peter; Ksendzov, Alexander; Fitzsimmons, Michael J.; Martin, Suzanne C.

1998-01-01

We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this amplifier was designed for good noise performance, which is why the input and output return losses are poorer than one would expect for an amplifier simply matched for gain. However, noise performance has not been measured at this time. While the agreement between modeled vs. experimental data is not exact, the data prove that bump-bonded technology can be used for amplifiers at frequencies at least as high as 100 GHz. JPL is pursuing this technology as a way to economically and quickly incorporate the best available HEMTs into a circuit with all of the reliability and circuit design flexibility offered by MMIC technology. We are currently using the technology to fabricate 4-stage, wide-band, W-band LNA's. We have also performed pull and shear tests which show that the bump bonds are sufficiently robust for any anticipated application.

Inductively coupled wireless RF coil arrays.

PubMed

Bulumulla, S B; Fiveland, E; Park, K J; Foo, T K; Hardy, C J

2015-04-01

As the number of coils increases in multi-channel MRI receiver-coil arrays, RF cables and connectors become increasingly bulky and heavy, degrading patient comfort and slowing workflow. Inductive coupling of signals provides an attractive "wireless" approach, with the potential to reduce coil weight and cost while simplifying patient setup. In this work, multi-channel inductively coupled anterior arrays were developed and characterized for 1.5T imaging. These comprised MR receiver coils inductively (or "wirelessly") linked to secondary or "sniffer" coils whose outputs were transmitted via preamps to the MR system cabinet. The induced currents in the imaging coils were blocked by passive diode circuits during RF transmit. The imaging arrays were totally passive, obviating the need to deliver power to the coils, and providing lightweight, untethered signal reception with easily positioned coils. Single-shot fast spin echo images were acquired from 5 volunteers using a 7-element inductively coupled coil array and a conventionally cabled 7-element coil array of identical geometry, with the inductively-coupled array showing a relative signal-to-noise ratio of 0.86 +/- 0.07. The concept was extended to a larger 9-element coil array to demonstrate the effect of coil element size on signal transfer and RF-transmit blocking. Copyright © 2015 Elsevier Inc. All rights reserved.

Diffraction limited focusing and routing of gap plasmons by a metal-dielectric-metal lens

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dennis, Brian S.; Czaplewski, David A.; Haftel, Michael I.

2015-01-01

Passive optical elements can play key roles in photonic applications such as plasmonic integrated circuits. Here we experimentally demonstrate passive gap-plasmon focusing and routing in two-dimensions. This is accomplished using a high numerical-aperture metal-dielectric-metal lens incorporated into a planar-waveguide device. Fabrication via metal sputtering, oxide deposition, electron-and focused-ion-beam lithography, and argon ion-milling is reported on in detail. Diffraction-limited focusing is optically characterized by sampling out-coupled light with a microscope. The measured focal distance and full-width-half-maximum spot size agree well with the calculated lens performance. The surface plasmon polariton propagation length is measured by sampling light from multiple out-coupler slits. (C)more » 2015 Optical Society of America« less

Shunted Piezoelectric Vibration Damping Analysis Including Centrifugal Loading Effects

NASA Technical Reports Server (NTRS)

Min, James B.; Duffy, Kirsten P.; Provenza, Andrew J.

2011-01-01

Excessive vibration of turbomachinery blades causes high cycle fatigue problems which require damping treatments to mitigate vibration levels. One method is the use of piezoelectric materials as passive or active dampers. Based on the technical challenges and requirements learned from previous turbomachinery rotor blades research, an effort has been made to investigate the effectiveness of a shunted piezoelectric for the turbomachinery rotor blades vibration control, specifically for a condition with centrifugal rotation. While ample research has been performed on the use of a piezoelectric material with electric circuits to attempt to control the structural vibration damping, very little study has been done regarding rotational effects. The present study attempts to fill this void. Specifically, the objectives of this study are: (a) to create and analyze finite element models for harmonic forced response vibration analysis coupled with shunted piezoelectric circuits for engine blade operational conditions, (b) to validate the experimental test approaches with numerical results and vice versa, and (c) to establish a numerical modeling capability for vibration control using shunted piezoelectric circuits under rotation. Study has focused on a resonant damping control using shunted piezoelectric patches on plate specimens. Tests and analyses were performed for both non-spinning and spinning conditions. The finite element (FE) shunted piezoelectric circuit damping simulations were performed using the ANSYS Multiphysics code for the resistive and inductive circuit piezoelectric simulations of both conditions. The FE results showed a good correlation with experimental test results. Tests and analyses of shunted piezoelectric damping control, demonstrating with plate specimens, show a great potential to reduce blade vibrations under centrifugal loading.

Design and optimization of LCL-VSC grid-tied converter having short circuit fault current limiting ability

NASA Astrophysics Data System (ADS)

Liu, Mengqi; Liu, Haijun; Wang, Zhikai

2017-01-01

Traditional LCL grid-tied converters haven't the ability to limit the short-circuit fault current and only remove grid-connected converter using the breaker. However, the VSC converters become uncontrollable after the short circuit fault cutting off and the power switches may be damaged if the circuit breaker removes slowly. Compared to the filter function of the LCL passive components in traditional VSC converters, the novel LCL-VSC converter has the ability of limiting the short circuit fault current using the reasonable designed LCL parameters. In this paper the mathematical model of the LCL converter is established and the characteristics of the short circuit fault current generated by the ac side and dc side are analyzed. Thus one design and optimization scheme of the reasonable LCL passive parameter is proposed for the LCL-VSC converter having short circuit fault current limiting ability. In addition to ensuring the LCL passive components filtering the high-frequency harmonic, this scheme also considers the impedance characteristics to limit the fault current of AC and DC short circuit fault respectively flowing through the power switch no more than the maximum allowable operating current, in order to make the LCL converter working continuously. Finally, the 200kW simulation system is set up to prove the validity and feasibility of the theoretical analysis using the proposed design and optimization scheme.

Recent progress in design and hybridization of planar grating-based transceivers

NASA Astrophysics Data System (ADS)

Bidnyk, S.; Pearson, M.; Balakrishnan, A.; Gao, M.

2007-06-01

We report on recent progress in simulations, physical layout, fabrication and hybridization of planar grating-based transceivers for passive optical networks (PONs). Until recently, PON transceivers have been manufactured using bulk micro-optical components. Today, advancements in modeling and simulation techniques has made it possible to design complex elements in the same silica-on silicon PLC platform and create an alternative platform for manufacturing of bi-directional transceivers. In our chips we simulated an integrated chip that monolithically combined planar reflective gratings and cascaded Mach-Zehnder interferometers. We used a combination of the finite element method and beam propagation method to model cascaded interferometers with enhanced coupling coefficients. Our simulations show that low-diffraction order planar reflective gratings, designed for small incidence and reflection angles, possess the required dispersion strength to meet the PON specifications. Subsequently, we created structures for passive alignment and hybridized photodetectors and lasers. We believe that advancements in simulation of planar lightwave circuits with embedded planar reflective gratings will result in displacement of the thin-film filters (TFFs) technology in many applications that require a high degree of monolithic and hybrid integration.

On-Chip Microwave Quantum Hall Circulator

NASA Astrophysics Data System (ADS)

Mahoney, A. C.; Colless, J. I.; Pauka, S. J.; Hornibrook, J. M.; Watson, J. D.; Gardner, G. C.; Manfra, M. J.; Doherty, A. C.; Reilly, D. J.

2017-01-01

Circulators are nonreciprocal circuit elements that are integral to technologies including radar systems, microwave communication transceivers, and the readout of quantum information devices. Their nonreciprocity arises from the interference of microwaves over the centimeter scale of the signal wavelength, in the presence of bulky magnetic media that breaks time-reversal symmetry. Here, we realize a completely passive on-chip microwave circulator with size 1 /1000 th the wavelength by exploiting the chiral, "slow-light" response of a two-dimensional electron gas in the quantum Hall regime. For an integrated GaAs device with 330 μ m diameter and about 1-GHz center frequency, a nonreciprocity of 25 dB is observed over a 50-MHz bandwidth. Furthermore, the nonreciprocity can be dynamically tuned by varying the voltage at the port, an aspect that may enable reconfigurable passive routing of microwave signals on chip.

Corrosion behaviour of Al-Fe-Ti-V medium entropy alloy

NASA Astrophysics Data System (ADS)

Bodunrin, M. O.; Obadele, B. A.; Chown, L. H.; Olubambi, P. A.

2017-12-01

Alloys containing up to four multi-principal elements in equiatomic ratios are referred to as medium entropy alloys (MEA). These alloys have attracted the interest of many researchers due to the superior mechanical properties it offers over the traditional alloys. The design approach of MEA often results to simple solid solution with either body centered cubic; face centered cubic structures or both. As the consideration for introducing the alloys into several engineering application increases, there have been efforts to study the corrosion behaviour of these alloys. Previous reports have shown that some of these alloys are more susceptible to corrosion when compared with traditional alloys due to lack of protective passive film. In this research, we have developed AlFeTiV medium entropy alloys containing two elements (Ti and Al) that readily passivate when exposed to corrosive solutions. The alloys were produced in vacuum arc furnace purged with high purity argon. Open circuit potential and potentiodynamic polarisation tests were used to evaluate the corrosion behaviour of the as-cast AlFeTiV alloy in 3.5 wt% NaCl and 1 M H2SO4. The corrosion performance of the alloy was compared with Ti-6Al-4V alloy tested under similar conditions. The results show that unlike in Ti-6Al-4V alloy, the open circuit potential of the AlFeTiV alloy move towards the negative values in both 3.5 wt% NaCl and 1 M H2SO4 solutions indicating that self-activation occurred rapidly on immersion. Anodic polarisation of the alloys showed that AlFeTiV alloy exhibited a narrow range of passivity in both solutions. In addition, the alloys exhibited lower Ecorr and higher Icorr when compared with traditional Ti-6Al-4V alloy. The traditional Ti-6Al-4V alloy showed superior corrosion resistant to the AlFeTiV alloy in both 3.5 wt.% NaCl and 1 M H2SO4 solutions.

Computationally efficient modeling and simulation of large scale systems

NASA Technical Reports Server (NTRS)

Jain, Jitesh (Inventor); Cauley, Stephen F. (Inventor); Li, Hong (Inventor); Koh, Cheng-Kok (Inventor); Balakrishnan, Venkataramanan (Inventor)

2010-01-01

A method of simulating operation of a VLSI interconnect structure having capacitive and inductive coupling between nodes thereof. A matrix X and a matrix Y containing different combinations of passive circuit element values for the interconnect structure are obtained where the element values for each matrix include inductance L and inverse capacitance P. An adjacency matrix A associated with the interconnect structure is obtained. Numerical integration is used to solve first and second equations, each including as a factor the product of the inverse matrix X.sup.1 and at least one other matrix, with first equation including X.sup.1Y, X.sup.1A, and X.sup.1P, and the second equation including X.sup.1A and X.sup.1P.

Simplifications in modelling of dynamical response of coupled electro-mechanical system

NASA Astrophysics Data System (ADS)

Darula, Radoslav; Sorokin, Sergey

2016-12-01

The choice of a most suitable model of an electro-mechanical system depends on many variables, such as a scale of the system, type and frequency range of its operation, or power requirements. The article focuses on the model of the electromagnetic element used in passive regime (no feedback loops are assumed) and a general lumped parameter model (a conventional mass-spring-damper system coupled to an electric circuit consisting of a resistance, an inductance and a capacitance) is compared with its simplified version, where the full RLC circuit is replaced with its RL simplification, i.e. the capacitance of the electric system is neglected and just its inductance and the resistance are considered. From the comparison of dynamical responses of these systems, the range of applicability of a simplified model is assessed for free as well as forced vibration.

Programmable nanowire circuits for nanoprocessors.

PubMed

Yan, Hao; Choe, Hwan Sung; Nam, SungWoo; Hu, Yongjie; Das, Shamik; Klemic, James F; Ellenbogen, James C; Lieber, Charles M

2011-02-10

A nanoprocessor constructed from intrinsically nanometre-scale building blocks is an essential component for controlling memory, nanosensors and other functions proposed for nanosystems assembled from the bottom up. Important steps towards this goal over the past fifteen years include the realization of simple logic gates with individually assembled semiconductor nanowires and carbon nanotubes, but with only 16 devices or fewer and a single function for each circuit. Recently, logic circuits also have been demonstrated that use two or three elements of a one-dimensional memristor array, although such passive devices without gain are difficult to cascade. These circuits fall short of the requirements for a scalable, multifunctional nanoprocessor owing to challenges in materials, assembly and architecture on the nanoscale. Here we describe the design, fabrication and use of programmable and scalable logic tiles for nanoprocessors that surmount these hurdles. The tiles were built from programmable, non-volatile nanowire transistor arrays. Ge/Si core/shell nanowires coupled to designed dielectric shells yielded single-nanowire, non-volatile field-effect transistors (FETs) with uniform, programmable threshold voltages and the capability to drive cascaded elements. We developed an architecture to integrate the programmable nanowire FETs and define a logic tile consisting of two interconnected arrays with 496 functional configurable FET nodes in an area of ∼960 μm(2). The logic tile was programmed and operated first as a full adder with a maximal voltage gain of ten and input-output voltage matching. Then we showed that the same logic tile can be reprogrammed and used to demonstrate full-subtractor, multiplexer, demultiplexer and clocked D-latch functions. These results represent a significant advance in the complexity and functionality of nanoelectronic circuits built from the bottom up with a tiled architecture that could be cascaded to realize fully integrated nanoprocessors with computing, memory and addressing capabilities.

Stress redistribution and damage in interconnects caused by electromigration

NASA Astrophysics Data System (ADS)

Chiras, Stefanie Ruth

Electromigration has long been recognized as a phenomenon that induces mass redistribution in metals which, when constrained, can lead to the creation of stress. Since the development of the integrated circuit, electromigration. in interconnects, (the metal lines which carry current between devices in integrated circuits), has become a reliability concern. The primary failure mechanism in the interconnects is usually voiding, which causes electrical resistance increases in the circuit. In some cases, however, another failure mode occurs, fracture of the surrounding dielectric driven by electromigration induced compressive stresses within the interconnect. It is this failure mechanism that is the focus of this thesis. To study dielectric fracture, both residual processing stresses and the development of electromigration induced stress in isolated, constrained interconnects was measured. The high-resolution measurements were made using two types of piezospectroscopy, complemented by finite element analysis (FEA). Both procedures directly measured stress in the underlying or neighboring substrate and used FEA to determine interconnect stresses. These interconnect stresses were related to the effected circuit failure mode through post-test scanning electron microscopy and resistance measurements taken during electromigration testing. The results provide qualitative evidence of electromigration driven passivation fracture, and quantitative analysis of the theoretical model of the failure, the "immortal" interconnect concept.

New strategies for SHM based on a multichannel wireless AE node

NASA Astrophysics Data System (ADS)

Godinez-Azcuaga, Valery; Ley, Obdulia

2014-03-01

This paper discusses the development of an Acoustic Emission (AE) wireless node and its application for SHM (Structural Health Monitoring). The instrument development was planned for applications monitoring steel and concrete bridges components. The final product, now commercially available, is a sensor node which includes multiple sensing elements, on board signal processing and analysis capabilities, signal conditioning electronics, power management circuits, wireless data transmission element and energy harvesting unit. The sensing elements are capable of functioning in both passive and active modes, while the multiple parametric inputs are available for connecting various sensor types to measure external characteristics affecting the performance of the structure under monitoring. The output of all these sensors are combined and analyzed at the node in order to minimize the data transmission rate, which consumes significant amount of power. Power management circuits are used to reduce the data collection intervals through selective data acquisition strategies and minimize the sensor node power consumption. This instrument, known as the 1284, is an excellent platform to deploy SHM in the original bridge applications, but initial prototypes has shown significant potential in monitoring composite wind turbine blades and composites mockups of Unmanned Autonomous Vehicles (UAV) components; currently we are working to extend the use of this system to fields such as coal flow, power transformer, and off-shore platform monitoring.

Feasibility study of silicon nitride protection of plastic encapsulated semiconductors

NASA Technical Reports Server (NTRS)

Peters, J. W.; Hall, T. C.; Erickson, J. J.; Gebhart, F. L.

1979-01-01

The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical silicon nitride (photonitride) passivations (parallel evaluations) of integrated circuits which were then encapsulated in plastic is described. Photonitride passivation is compatible with all wire bonded lead frame assemblies, with or without initial chip passivation. Plasma nitride passivation of lead frame assemblies is possible only if the chip is passivated before lead frame assembly. The survival rate after the environmental test sequence of devices with a coating of plasma nitride on the chip and a coating of either plasma nitride or photonitride over the assembled device is significantly greater than that of devices assembled with no nitride protective coating over either chip or lead frame.

Entrainment and high-density three-dimensional mapping in right atrial macroreentry provide critical complementary information: Entrainment may unmask "visual reentry" as passive.

PubMed

Pathik, Bhupesh; Lee, Geoffrey; Nalliah, Chrishan; Joseph, Stephen; Morton, Joseph B; Sparks, Paul B; Sanders, Prashanthan; Kistler, Peter M; Kalman, Jonathan M

2017-10-01

With the recent advent of high-density (HD) 3-dimensional (3D) mapping, the utility of entrainment is uncertain. However, the limitations of visual representation and interpretation of these high-resolution 3D maps are unclear. The purpose of this study was to determine the strengths and limitations of both HD 3D mapping and entrainment mapping during mapping of right atrial macroreentry. Fifteen patients were studied. The number and type of circuits accounting for ≥90% of the tachycardia cycle length using HD 3D mapping were verified using systematic entrainment mapping. Entrainment sites with an unexpectedly long postpacing interval despite proximity to the active circuit were evaluated. Based on HD 3D mapping, 27 circuits were observed: 12 peritricuspid, 2 upper loop reentry, 10 lower loop reentry, and 3 lateral wall circuits. With entrainment, 17 of the 27 circuits were active: all 12 peritricuspid and 2 upper loop reentry. However, lower loop reentry was confirmed in only 3 of 10, and none of the 3 lateral wall circuits were present. Mean percentage of tachycardia cycle length covered by active circuits was 98% ± 1% vs 97% ± 2% for passive circuits (P = .09). None of the 345 entrainment runs terminated tachycardia or changed tachycardia mechanism. In 8 of 15 patients, 13 examples of unexpectedly long postpacing interval were observed at entrainment sites located distal to localized zones of slow conduction seen on HD 3D mapping. Using HD 3D mapping, "visual reentry" may be due to passive circuitous propagation rather than a critical reentrant circuit. HD 3D mapping provides new insights into regional conduction and helps explain unusual entrainment phenomena. Copyright © 2017 Heart Rhythm Society. Published by Elsevier Inc. All rights reserved.

A Resonant Damping Study Using Piezoelectric Materials

NASA Technical Reports Server (NTRS)

Min, J. B.; Duffy, K. P.; Choi, B. B.; Morrison, C. R.; Jansen, R. H.; Provenza, A. J.

2008-01-01

Excessive vibration of turbomachinery blades causes high cycle fatigue (HCF) problems requiring damping treatments to mitigate vibration levels. Based on the technical challenges and requirements learned from previous turbomachinery blade research, a feasibility study of resonant damping control using shunted piezoelectric patches with passive and active control techniques has been conducted on cantilever beam specimens. Test results for the passive damping circuit show that the optimum resistive shunt circuit reduces the third bending resonant vibration by almost 50%, and the optimum inductive circuit reduces the vibration by 90%. In a separate test, active control reduced vibration by approximately 98%.

Simulation and measurement of a Ka-band HTS MMIC Josephson junction mixer

NASA Astrophysics Data System (ADS)

Zhang, Ting; Pegrum, Colin; Du, Jia; Guo, Yingjie Jay

2017-01-01

We report modeling and simulation results for a Ka band high-temperature superconducting (HTS) monolithic microwave integrated circuit (MMIC) Josephson junction mixer. A Verilog-A model of a Josephson junction is established and imported into the system simulator to realize a full HTS MMIC circuit simulation containing the HTS passive circuit models. Impedance matching optimization between the junction and passive devices is investigated. Junction DC I-V characteristics, current and local oscillator bias conditions and mixing performance are simulated and compared with the experimental results. Good agreement is obtained between the simulation and measurement results.

Modelling of double air-bridged structured inductor implemented by a GaAs integrated passive device manufacturing process

NASA Astrophysics Data System (ADS)

Li, Yang; Yao, Zhao; Zhang, Chun-Wei; Fu, Xiao-Qian; Li, Zhi-Ming; Li, Nian-Qiang; Wang, Cong

2017-05-01

In order to provide excellent performance and show the development of a complicated structure in a module and system, this paper presents a double air-bridge-structured symmetrical differential inductor based on integrated passive device technology. Corresponding to the proposed complicated structure, a new manufacturing process fabricated on a high-resistivity GaAs substrate is described in detail. Frequency-independent physical models are presented with lump elements and the results of skin effect-based measurements. Finally, some key features of the inductor are compared; good agreement between the measurements and modeled circuit fully verifies the validity of the proposed modeling approach. Meanwhile, we also present a comparison of different coil turns for inductor performance. The proposed work can provide a good solution for the design, fabrication, modeling, and practical application of radio-frequency modules and systems.

Evaluation of Advanced COTS Passive Devices for Extreme Temperature Operation

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Dones, Keishla R.

2009-01-01

Electronic sensors and circuits are often exposed to extreme temperatures in many of NASA deep space and planetary surface exploration missions. Electronics capable of operation in harsh environments would be beneficial as they simplify overall system design, relax thermal management constraints, and meet operational requirements. For example, cryogenic operation of electronic parts will improve reliability, increase energy density, and extend the operational lifetimes of space-based electronic systems. Similarly, electronic parts that are able to withstand and operate efficiently in high temperature environments will negate the need for thermal control elements and their associated structures, thereby reducing system size and weight, enhancing its reliability, improving its efficiency, and reducing cost. Passive devices play a critical role in the design of almost all electronic circuitry. To address the needs of systems for extreme temperature operation, some of the advanced and most recently introduced commercial-off-the-shelf (COTS) passive devices, which included resistors and capacitors, were examined for operation under a wide temperature regime. The types of resistors investigated included high temperature precision film, general purpose metal oxide, and wirewound.

Quantum memristors

DOE PAGES

Pfeiffer, P.; Egusquiza, I. L.; Di Ventra, M.; ...

2016-07-06

Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the known quantized models of passive circuit elements, such as inductors, capacitors or resistors, the design and realization of a quantum memristor is still missing. Here, we introduce the concept of a quantum memristor as a quantum dissipative device, whose decoherence mechanism is controlled by a continuous-measurement feedback scheme, which accounts for the memory. Indeed, we provide numerical simulations showing that memory effects actually persist in the quantummore » regime. Our quantization method, specifically designed for superconducting circuits, may be extended to other quantum platforms, allowing for memristor-type constructions in different quantum technologies. As a result, the proposed quantum memristor is then a building block for neuromorphic quantum computation and quantum simulations of non-Markovian systems.« less

Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures

NASA Astrophysics Data System (ADS)

Šály, V.; Perný, M.; Janíček, F.; Huran, J.; Mikolášek, M.; Packa, J.

2017-04-01

Progressive smart photovoltaic technologies including heterostructures a-SiC/c-Si with ITO antireflection film are one of the prospective replacements of conventional photovoltaic silicon technology. Our paper is focused on the investigation of heterostructures a-SiC/c-Si provided with a layer of ITO (indium oxide/tin oxide 90/10 wt.%) which acts as a passivating and antireflection coating. Prepared photovoltaic cell structure was investigated at various temperatures and the influence of temperature on its operation was searched. The investigation of the dynamic properties of heterojunction PV cells was carried out using impedance spectroscopy. The equivalent AC circuit which approximates the measured impedance data was proposed. Assessment of the influence of the temperature on the operation of prepared heterostructure was carried out by analysis of the temperature dependence of AC equivalent circuit elements.

Random one-of-N selector

DOEpatents

Kronberg, J.W.

1993-04-20

An apparatus for selecting at random one item of N items on the average comprising counter and reset elements for counting repeatedly between zero and N, a number selected by the user, a circuit for activating and deactivating the counter, a comparator to determine if the counter stopped at a count of zero, an output to indicate an item has been selected when the count is zero or not selected if the count is not zero. Randomness is provided by having the counter cycle very often while varying the relatively longer duration between activation and deactivation of the count. The passive circuit components of the activating/deactivating circuit and those of the counter are selected for the sensitivity of their response to variations in temperature and other physical characteristics of the environment so that the response time of the circuitry varies. Additionally, the items themselves, which may be people, may vary in shape or the time they press a pushbutton, so that, for example, an ultrasonic beam broken by the item or person passing through it will add to the duration of the count and thus to the randomness of the selection.

Random one-of-N selector

DOEpatents

Kronberg, James W.

1993-01-01

An apparatus for selecting at random one item of N items on the average comprising counter and reset elements for counting repeatedly between zero and N, a number selected by the user, a circuit for activating and deactivating the counter, a comparator to determine if the counter stopped at a count of zero, an output to indicate an item has been selected when the count is zero or not selected if the count is not zero. Randomness is provided by having the counter cycle very often while varying the relatively longer duration between activation and deactivation of the count. The passive circuit components of the activating/deactivating circuit and those of the counter are selected for the sensitivity of their response to variations in temperature and other physical characteristics of the environment so that the response time of the circuitry varies. Additionally, the items themselves, which may be people, may vary in shape or the time they press a pushbutton, so that, for example, an ultrasonic beam broken by the item or person passing through it will add to the duration of the count and thus to the randomness of the selection.

Analysis on Target Detection and Classification in LTE Based Passive Forward Scattering Radar.

PubMed

Raja Abdullah, Raja Syamsul Azmir; Abdul Aziz, Noor Hafizah; Abdul Rashid, Nur Emileen; Ahmad Salah, Asem; Hashim, Fazirulhisyam

2016-09-29

The passive bistatic radar (PBR) system can utilize the illuminator of opportunity to enhance radar capability. By utilizing the forward scattering technique and procedure into the specific mode of PBR can provide an improvement in target detection and classification. The system is known as passive Forward Scattering Radar (FSR). The passive FSR system can exploit the peculiar advantage of the enhancement in forward scatter radar cross section (FSRCS) for target detection. Thus, the aim of this paper is to show the feasibility of passive FSR for moving target detection and classification by experimental analysis and results. The signal source is coming from the latest technology of 4G Long-Term Evolution (LTE) base station. A detailed explanation on the passive FSR receiver circuit, the detection scheme and the classification algorithm are given. In addition, the proposed passive FSR circuit employs the self-mixing technique at the receiver; hence the synchronization signal from the transmitter is not required. The experimental results confirm the passive FSR system's capability for ground target detection and classification. Furthermore, this paper illustrates the first classification result in the passive FSR system. The great potential in the passive FSR system provides a new research area in passive radar that can be used for diverse remote monitoring applications.

Analysis on Target Detection and Classification in LTE Based Passive Forward Scattering Radar

PubMed Central

Raja Abdullah, Raja Syamsul Azmir; Abdul Aziz, Noor Hafizah; Abdul Rashid, Nur Emileen; Ahmad Salah, Asem; Hashim, Fazirulhisyam

2016-01-01

The passive bistatic radar (PBR) system can utilize the illuminator of opportunity to enhance radar capability. By utilizing the forward scattering technique and procedure into the specific mode of PBR can provide an improvement in target detection and classification. The system is known as passive Forward Scattering Radar (FSR). The passive FSR system can exploit the peculiar advantage of the enhancement in forward scatter radar cross section (FSRCS) for target detection. Thus, the aim of this paper is to show the feasibility of passive FSR for moving target detection and classification by experimental analysis and results. The signal source is coming from the latest technology of 4G Long-Term Evolution (LTE) base station. A detailed explanation on the passive FSR receiver circuit, the detection scheme and the classification algorithm are given. In addition, the proposed passive FSR circuit employs the self-mixing technique at the receiver; hence the synchronization signal from the transmitter is not required. The experimental results confirm the passive FSR system’s capability for ground target detection and classification. Furthermore, this paper illustrates the first classification result in the passive FSR system. The great potential in the passive FSR system provides a new research area in passive radar that can be used for diverse remote monitoring applications. PMID:27690051

Passive wireless strain monitoring of tyres using capacitance and tuning frequency changes

NASA Astrophysics Data System (ADS)

Matsuzaki, Ryosuke; Todoroki, Akira

2005-08-01

In-service strain monitoring of tyres of automobiles is quite effective for improving the reliability of tyres and anti-lock braking systems (ABS). Conventional strain gauges have high stiffness and require lead wires. Therefore, they are cumbersome for tyre strain measurements. In a previous study, the authors proposed a new wireless strain monitoring method that adopts the tyre itself as a sensor, with an oscillating circuit. This method is very simple and useful, but it requires a battery to activate the oscillating circuit. In the present study, the previous method for wireless tyre monitoring is improved to produce a passive wireless sensor. A specimen made from a commercially available tyre is connected to a tuning circuit comprising an inductance and a capacitance as a condenser. The capacitance change of the tyre alters the tuning frequency. This change of the tuned radio wave facilitates wireless measurement of the applied strain of the specimen without any power supply. This passive wireless method is applied to a specimen and the static applied strain is measured. Experiments demonstrate that the method is effective for passive wireless strain monitoring of tyres.

Four-terminal circuit element with photonic core

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sampayan, Stephen

A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated basedmore » on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.« less

General purpose computer programs for numerically analyzing linear ac electrical and electronic circuits for steady-state conditions

NASA Technical Reports Server (NTRS)

Egebrecht, R. A.; Thorbjornsen, A. R.

1967-01-01

Digital computer programs determine steady-state performance characteristics of active and passive linear circuits. The ac analysis program solves the basic circuit parameters. The compiler program solves these circuit parameters and in addition provides a more versatile program by allowing the user to perform mathematical and logical operations.

A study on chloride induced depassivation of Fe-P-C-Si and Fe-P-C-Si-N steels in simulated concrete pore solution

NASA Astrophysics Data System (ADS)

Mehta, Yashwant; Chaudhari, Gajanan P.; Dabhade, Vikram V.

2018-03-01

The corrosion behaviour of high phosphorous steels containing varying amounts of silicon and nitrogen was studied by potentiodynamic polarization, linear polarization resistance (LPR) and electrochemical impedance spectroscopy (EIS) measurements. The morphology of a steel specimen tested in chloride containing concrete pore solution was studied using scanning electron microscope (SEM) and the elemental distribution at the pitting corrosion area was investigated using electron dispersive spectroscopy (EDS). The results showed that the capacitance increased and resistance declined with immersion time in Ca(OH)2 solution containing 0.1% chloride for plain carbon steel. The opposite was observed in the case of the high phosphorous steels. The potentiodynamic polarization and LPR results complement the EIS findings. Corrosion behaviour could be described with an equivalent circuit having two time constants. The creation, expansion and degradation of the passive layer were discussed with the help of the equivalent circuit elements. The SEM-EDS studies revealed that MnS inclusions at the surface could have a role in the initiation and growth of pits and that phosphorous was present at the pit free surface of the steel.

Versatile current-mode universal biquadratic filter using DO-CCIIs

NASA Astrophysics Data System (ADS)

Chen, Hua-Pin

2013-07-01

In this article, a new three-input and three-output versatile current-mode universal biquadratic filter is proposed. The circuit employs three dual-output current conveyors (DO-CCIIs) as active elements together with three grounded resistors and two grounded capacitors. The proposed configuration exhibits low-input impedance and high-output impedance which is important for easy cascading in the current-mode operations. It can be used as either a single-input and three-output or three-input and two-output circuit. In the operation of single-input and three-output circuit, the lowpass, bandpass and bandreject can be realised simultaneously, while the highpass filtering response can be easily obtained by connecting appropriated output current directly without using addition stages. In the operation of three-input and two-output circuit, all five generic filtering functions can be easily realised by selecting different three input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no component matching conditions or inverting-type input current signals are imposed. All the passive and active sensitivities are low. HSPICE simulation results based on using TSMC 0.18 µm 1P6M CMOS process technology and supply voltages ±0.9 V to verify the theoretical analysis.

High-temperature brushless DC motor controller

DOEpatents

Cieslewski, Crzegorz; Lindblom, Scott C.; Maldonado, Frank J.; Eckert, Michael Nathan

2017-05-16

A motor control system for deployment in high temperature environments includes a controller; a first half-bridge circuit that includes a first high-side switching element and a first low-side switching element; a second half-bridge circuit that includes a second high-side switching element and a second low-side switching element; and a third half-bridge circuit that includes a third high-side switching element and a third; low-side switching element. The motor controller is arranged to apply a pulse width modulation (PWM) scheme to switch the first half-bridge circuit, second half-bridge circuit, and third half-bridge circuit to power a motor.

Wide-Range Temperature Sensors with High-Level Pulse Train Output

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad; Patterson, Richard L.

2009-01-01

Two types of temperature sensors have been developed for wide-range temperature applications. The two sensors measure temperature in the range of -190 to +200 C and utilize a thin-film platinum RTD (resistance temperature detector) as the temperature-sensing element. Other parts used in the fabrication of these sensors include NPO (negative-positive- zero) type ceramic capacitors for timing, thermally-stable film or wirewound resistors, and high-temperature circuit boards and solder. The first type of temperature sensor is a relaxation oscillator circuit using an SOI (silicon-on-insulator) operational amplifier as a comparator. The output is a pulse train with a period that is roughly proportional to the temperature being measured. The voltage level of the pulse train is high-level, for example 10 V. The high-level output makes the sensor less sensitive to noise or electromagnetic interference. The output can be read by a frequency or period meter and then converted into a temperature reading. The second type of temperature sensor is made up of various types of multivibrator circuits using an SOI type 555 timer and the passive components mentioned above. Three configurations have been developed that were based on the technique of charging and discharging a capacitor through a resistive element to create a train of pulses governed by the capacitor-resistor time constant. Both types of sensors, which operated successfully over the wide temperature range, have potential use in extreme temperature environments including jet engines and space exploration missions.

Compact Radiometers Expand Climate Knowledge

NASA Technical Reports Server (NTRS)

2010-01-01

To gain a better understanding of Earth's water, energy, and carbon cycles, NASA plans to embark on the Soil Moisture Active and Passive mission in 2015. To prepare, Goddard Space Flight Center provided Small Business Innovation Research (SBIR) funding to ProSensing Inc., of Amherst, Massachusetts, to develop a compact ultrastable radiometer for sea surface salinity and soil moisture mapping. ProSensing incorporated small, low-cost, high-performance elements into just a few circuit boards and now offers two lightweight radiometers commercially. Government research agencies, university research groups, and large corporations around the world are using the devices for mapping soil moisture, ocean salinity, and wind speed.

Passive wireless strain monitoring of tire using capacitance change

NASA Astrophysics Data System (ADS)

Matsuzaki, Ryosuke; Todoroki, Akira

2004-07-01

In-service strain monitoring of tires of automobile is quite effective for improving the reliability of tires and Anti-lock Braking System (ABS). Since conventional strain gages have high stiffness and require lead wires, the conventional strain gages are cumbersome for the strain measurements of the tires. In a previous study, the authors proposed a new wireless strain monitoring method that adopts the tire itself as a sensor, with an oscillating circuit. This method is very simple and useful, but it requires a battery to activate the oscillating circuit. In the present study, the previous method for wireless tire monitoring is improved to produce a passive wireless sensor. A specimen made from a commercially available tire is connected to a tuning circuit comprising an inductance and a capacitance as a condenser. The capacitance change of tire causes change of the tuning frequency. This change of the tuned radio wave enables us to measure the applied strain of the specimen wirelessly, without any power supply from outside. This new passive wireless method is applied to a specimen and the static applied strain is measured. As a result, the method is experimentally shown to be effective as a passive wireless strain monitoring of tires.

Guanidinium: A Route to Enhanced Carrier Lifetime and Open-Circuit Voltage in Hybrid Perovskite Solar Cells.

PubMed

De Marco, Nicholas; Zhou, Huanping; Chen, Qi; Sun, Pengyu; Liu, Zonghao; Meng, Lei; Yao, En-Ping; Liu, Yongsheng; Schiffer, Andy; Yang, Yang

2016-02-10

Hybrid perovskites have shown astonishing power conversion efficiencies owed to their remarkable absorber characteristics including long carrier lifetimes, and a relatively substantial defect tolerance for solution-processed polycrystalline films. However, nonradiative charge carrier recombination at grain boundaries limits open circuit voltages and consequent performance improvements of perovskite solar cells. Here we address such recombination pathways and demonstrate a passivation effect through guanidinium-based additives to achieve extraordinarily enhanced carrier lifetimes and higher obtainable open circuit voltages. Time-resolved photoluminescence measurements yield carrier lifetimes in guanidinium-based films an order of magnitude greater than pure-methylammonium counterparts, giving rise to higher device open circuit voltages and power conversion efficiencies exceeding 17%. A reduction in defect activation energy of over 30% calculated via admittance spectroscopy and confocal fluorescence intensity mapping indicates successful passivation of recombination/trap centers at grain boundaries. We speculate that guanidinium ions serve to suppress formation of iodide vacancies and passivate under-coordinated iodine species at grain boundaries and within the bulk through their hydrogen bonding capability. These results present a simple method for suppressing nonradiative carrier loss in hybrid perovskites to further improve performances toward highly efficient solar cells.

Printed Graphene Derivative Circuits as Passive Electrical Filters

PubMed Central

Sinar, Dogan

2018-01-01

The objective of this study is to inkjet print resistor-capacitor (RC) low pass electrical filters, using a novel water-based cellulose graphene ink, and compare the voltage-frequency and transient behavior to equivalent circuits constructed from discrete passive components. The synthesized non-toxic graphene-carboxymethyl cellulose (G-CMC) ink is deposited on mechanically flexible polyimide substrates using a customized printer that dispenses functionalized aqueous solutions. The design of the printed first-order and second-order low-pass RC filters incorporate resistive traces and interdigitated capacitors. Low pass filter characteristics, such as time constant, cut-off frequency and roll-off rate, are determined for comparative analysis. Experiments demonstrate that for low frequency applications (<100 kHz) the printed graphene derivative circuits performed as well as the circuits constructed from discrete resistors and capacitors for both low pass filter and RC integrator applications. The impact of mechanical stress due to bending on the electrical performance of the flexible printed circuits is also investigated. PMID:29473890

Printed Graphene Derivative Circuits as Passive Electrical Filters.

PubMed

Sinar, Dogan; Knopf, George K

2018-02-23

The objective of this study is to inkjet print resistor-capacitor ( RC ) low pass electrical filters, using a novel water-based cellulose graphene ink, and compare the voltage-frequency and transient behavior to equivalent circuits constructed from discrete passive components. The synthesized non-toxic graphene-carboxymethyl cellulose (G-CMC) ink is deposited on mechanically flexible polyimide substrates using a customized printer that dispenses functionalized aqueous solutions. The design of the printed first-order and second-order low-pass RC filters incorporate resistive traces and interdigitated capacitors. Low pass filter characteristics, such as time constant, cut-off frequency and roll-off rate, are determined for comparative analysis. Experiments demonstrate that for low frequency applications (<100 kHz) the printed graphene derivative circuits performed as well as the circuits constructed from discrete resistors and capacitors for both low pass filter and RC integrator applications. The impact of mechanical stress due to bending on the electrical performance of the flexible printed circuits is also investigated.

Linear and passive silicon diodes, isolators, and logic gates

NASA Astrophysics Data System (ADS)

Li, Zhi-Yuan

2013-12-01

Silicon photonic integrated devices and circuits have offered a promising means to revolutionalize information processing and computing technologies. One important reason is that these devices are compatible with conventional complementary metal oxide semiconductor (CMOS) processing technology that overwhelms current microelectronics industry. Yet, the dream to build optical computers has yet to come without the breakthrough of several key elements including optical diodes, isolators, and logic gates with low power, high signal contrast, and large bandwidth. Photonic crystal has a great power to mold the flow of light in micrometer/nanometer scale and is a promising platform for optical integration. In this paper we present our recent efforts of design, fabrication, and characterization of ultracompact, linear, passive on-chip optical diodes, isolators and logic gates based on silicon two-dimensional photonic crystal slabs. Both simulation and experiment results show high performance of these novel designed devices. These linear and passive silicon devices have the unique properties of small fingerprint, low power request, large bandwidth, fast response speed, easy for fabrication, and being compatible with COMS technology. Further improving their performance would open up a road towards photonic logics and optical computing and help to construct nanophotonic on-chip processor architectures for future optical computers.

An Ultra-Low-Power RFID/NFC Frontend IC Using 0.18 μm CMOS Technology for Passive Tag Applications.

PubMed

Bhattacharyya, Mayukh; Gruenwald, Waldemar; Jansen, Dirk; Reindl, Leonhard; Aghassi-Hagmann, Jasmin

2018-05-07

Battery-less passive sensor tags based on RFID or NFC technology have achieved much popularity in recent times. Passive tags are widely used for various applications like inventory control or in biotelemetry. In this paper, we present a new RFID/NFC frontend IC (integrated circuit) for 13.56 MHz passive tag applications. The design of the frontend IC is compatible with the standard ISO 15693/NFC 5. The paper discusses the analog design part in details with a brief overview of the digital interface and some of the critical measured parameters. A novel approach is adopted for the demodulator design, to demodulate the 10% ASK (amplitude shift keying) signal. The demodulator circuit consists of a comparator designed with a preset offset voltage. The comparator circuit design is discussed in detail. The power consumption of the bandgap reference circuit is used as the load for the envelope detection of the ASK modulated signal. The sub-threshold operation and low-supply-voltage are used extensively in the analog design—to keep the power consumption low. The IC was fabricated using 0.18 μ m CMOS technology in a die area of 1.5 mm × 1.5 mm and an effective area of 0.7 m m 2 . The minimum supply voltage desired is 1.2 V, for which the total power consumption is 107 μ W. The analog part of the design consumes only 36 μ W, which is low in comparison to other contemporary passive tags ICs. Eventually, a passive tag is developed using the frontend IC, a microcontroller, a temperature and a pressure sensor. A smart NFC device is used to readout the sensor data from the tag employing an Android-based application software. The measurement results demonstrate the full passive operational capability. The IC is suitable for low-power and low-cost industrial or biomedical battery-less sensor applications. A figure-of-merit (FOM) is proposed in this paper which is taken as a reference for comparison with other related state-of-the-art researches.

An Ultra-Low-Power RFID/NFC Frontend IC Using 0.18 μm CMOS Technology for Passive Tag Applications

PubMed Central

Gruenwald, Waldemar; Jansen, Dirk; Aghassi-Hagmann, Jasmin

2018-01-01

Battery-less passive sensor tags based on RFID or NFC technology have achieved much popularity in recent times. Passive tags are widely used for various applications like inventory control or in biotelemetry. In this paper, we present a new RFID/NFC frontend IC (integrated circuit) for 13.56 MHz passive tag applications. The design of the frontend IC is compatible with the standard ISO 15693/NFC 5. The paper discusses the analog design part in details with a brief overview of the digital interface and some of the critical measured parameters. A novel approach is adopted for the demodulator design, to demodulate the 10% ASK (amplitude shift keying) signal. The demodulator circuit consists of a comparator designed with a preset offset voltage. The comparator circuit design is discussed in detail. The power consumption of the bandgap reference circuit is used as the load for the envelope detection of the ASK modulated signal. The sub-threshold operation and low-supply-voltage are used extensively in the analog design—to keep the power consumption low. The IC was fabricated using 0.18 μm CMOS technology in a die area of 1.5 mm × 1.5 mm and an effective area of 0.7 mm2. The minimum supply voltage desired is 1.2 V, for which the total power consumption is 107 μW. The analog part of the design consumes only 36 μW, which is low in comparison to other contemporary passive tags ICs. Eventually, a passive tag is developed using the frontend IC, a microcontroller, a temperature and a pressure sensor. A smart NFC device is used to readout the sensor data from the tag employing an Android-based application software. The measurement results demonstrate the full passive operational capability. The IC is suitable for low-power and low-cost industrial or biomedical battery-less sensor applications. A figure-of-merit (FOM) is proposed in this paper which is taken as a reference for comparison with other related state-of-the-art researches. PMID:29735939

Tunable circuit for tunable capacitor devices

DOEpatents

Rivkina, Tatiana; Ginley, David S.

2006-09-19

A tunable circuit (10) for a capacitively tunable capacitor device (12) is provided. The tunable circuit (10) comprises a tunable circuit element (14) and a non-tunable dielectric element (16) coupled to the tunable circuit element (16). A tunable capacitor device (12) and a method for increasing the figure of merit in a tunable capacitor device (12) are also provided.

Design of high-speed burst mode clock and data recovery IC for passive optical network

NASA Astrophysics Data System (ADS)

Yan, Minhui; Hong, Xiaobin; Huang, Wei-Ping; Hong, Jin

2005-09-01

Design of a high bit rate burst mode clock and data recovery (BMCDR) circuit for gigabit passive optical networks (GPON) is described. A top-down design flow is established and some of the key issues related to the behavioural level modeling are addressed in consideration for the complexity of the BMCDR integrated circuit (IC). Precise implementation of Simulink behavioural model accounting for the saturation of frequency control voltage is therefore developed for the BMCDR, and the parameters of the circuit blocks can be readily adjusted and optimized based on the behavioural model. The newly designed BMCDR utilizes the 0.18um standard CMOS technology and is shown to be capable of operating at bit rate of 2.5Gbps, as well as the recovery time of one bit period in our simulation. The developed behaviour model is verified by comparing with the detailed circuit simulation.

Low cost electronic ultracapacitor interface technique to provide load leveling of a battery for pulsed load or motor traction drive applications

DOEpatents

King, Robert Dean; DeDoncker, Rik Wivina Anna Adelson

1998-01-01

A battery load leveling arrangement for an electrically powered system in which battery loading is subject to intermittent high current loading utilizes a passive energy storage device and a diode connected in series with the storage device to conduct current from the storage device to the load when current demand forces a drop in battery voltage. A current limiting circuit is connected in parallel with the diode for recharging the passive energy storage device. The current limiting circuit functions to limit the average magnitude of recharge current supplied to the storage device. Various forms of current limiting circuits are disclosed, including a PTC resistor coupled in parallel with a fixed resistor. The current limit circuit may also include an SCR for switching regenerative braking current to the device when the system is connected to power an electric motor.

Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide

NASA Astrophysics Data System (ADS)

Weng, M. H.; Clark, D. T.; Wright, S. N.; Gordon, D. L.; Duncan, M. A.; Kirkham, S. J.; Idris, M. I.; Chan, H. K.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

2017-05-01

A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300 °C and beyond. Critical to this functionality is the behaviour of the gate dielectric and data for high temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) MOS structures. In addition, a summary of the long term reliability for a range of structures including contact chains to both n-type and p-type SiC, as well as simple logic circuits is presented, showing function after 2000 h at 300 °C. Circuit data is also presented for the performance of digital logic devices, a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. A high temperature micro-oven system has been utilised to enable the high temperature testing and stressing of units assembled in ceramic dual in line packages, including a high temperature small form-factor SiC based bridge leg power module prototype, operated for over 1000 h at 300 °C. The data presented show that SiC CMOS is a key enabling technology in high temperature integrated circuit design. In particular it provides the ability to realise sensor interface circuits capable of operating above 300 °C, accommodate shifts in key parameters enabling deployment in applications including automotive, aerospace and deep well drilling.

Elastomeric Sensing of Pressure with Liquid Metal and Wireless Inductive Coupling

NASA Technical Reports Server (NTRS)

Dick, Jacob; Zou, Xiyue; Hogan, Ben; Tumalle, Jonathan; Etikyala, Sowmith; Fung, Diego; Charles, Watley; Gu, Tianye; Hull, Patrick V.; Mazzeo, Aaron D.

2017-01-01

This project describes resistance-based soft sensors filled with liquid metal, which permit measurements of large strains (0 percent to 110 percent), associated with small forces of less than 30 Newtons. This work also demonstrates a methodology for wireless transfer of these strain measurements without connected electrodes. These sensors allow intermittent detection of pressure on soft membranes with low force. Adapting these sensors for passive wireless pressure sensing will eliminate the need for embedded batteries, and will allow the sensors to transmit pressure data through non-conductive materials including glass and acrylic. The absence of batteries allows us to embed these sensors into materials for long-term use because the sensors only use passive analog circuit elements. We found the oxidation of the liquid metal (eutectic gallium indium) plays a role in the repeatability of the soft sensors. We investigated how the oxidation layer affected the behavior of the sensor by encapsulating materials (silicone, fluorosilicone, and PVC) with varied permeabilities to oxygen. We measured the effects of mechanical loading on the oxidation layer and the effects of wireless inductive coupling on the oxidation layer. We concluded our research by investigating the effects of embedding self-resonant circuits into polydimethylsiloxane (PDMS). Efforts to design engineered systems with soft materials are a growing field with progress in soft robotics, epidermal electronics, and wearable electronics. In the field of soft robotics, PDMS-based grippers are capable of picking up delicate objects because their form-fitting properties allow them to conform to the shape of objects more easily than conventional robotic grippers. Epidermal devices also use PDMS as a substrate to hold electronic components such as radios, sensors, and power supply circuits. Additionally, PDMS-based soft sensors can monitor human motion with liquid metal embedded within micro-channels. Passive wireless sensors have applications in structural health monitoring and medical health monitoring. Doctors can take wireless blood pressure measurements inside arteries to monitor the progression of heart disease. Glaucoma patients can use this technology to monitor the pressure in their eyes to track the progression of the disease.

Instrumentation techniques for monitoring shock and detonation waves

NASA Astrophysics Data System (ADS)

Dick, R. D.; Parrish, R. L.

1985-09-01

CORRTEX (Continuous Reflectometry for Radius Versus Time Experiments), SLIFER (Shorted Location Indication by Frequency of Electrical Resonance), and pin probes were used to monitor several conditions of blasting such as the detonation velocity of the explosive, the functioning of the stemming column confining the explosive, and rock mass motion. CORRTEX is a passive device that employs time-domain reflectometry to interrogate the two-way transit time of a coaxial cable. SLIFER is an active device that monitors the changing frequency resulting from a change in length of a coaxial cable forming an element of an oscillator circuit. Pin probes in this application consist of RG-174 coaxial cables, each with an open circuit, placed at several known locations within the material. Each cable is connected to a pulse-forming network and a voltage source. When the cables are shorted by the advancing wave, time-distance data are produced from which a velocity can be computed. Each technique, installation of the gauge, examples of the signals, and interpretation of the records are described.

Main principles of passive devices based on graphene and carbon films in microwave-THz frequency range

NASA Astrophysics Data System (ADS)

Kuzhir, Polina P.; Paddubskaya, Alesia G.; Volynets, Nadezhda I.; Batrakov, Konstantin G.; Kaplas, Tommi; Lamberti, Patrizia; Kotsilkova, Rumiana; Lambin, Philippe

2017-07-01

The ability of thin conductive films, including graphene, pyrolytic carbon (PyC), graphitic PyC (GrPyC), graphene with graphitic islands (GrI), glassy carbon (GC), and sandwich structures made of all these materials separated by polymer slabs to absorb electromagnetic radiation in microwave-THz frequency range, is discussed. The main physical principles making a basis for high absorption ability of these heterostructures are explained both in the language of electromagnetic theory and using representation of equivalent electrical circuits. The idea of using carbonaceous thin films as the main working elements of passive radiofrequency (RF) devices, such as shields, filters, polarizers, collimators, is proposed theoretically and proved experimentally. The important advantage of PyC, GrI, GrPyC, and GC is that, in contrast to graphene, they either can be easily deposited onto a dielectric substrate or are strong enough to allow their transfer from the catalytic substrate without a shuttle polymer layer. This opens a new avenue toward the development of a scalable protocol for cost-efficient production of ultralight electromagnetic shields that can be transferred to commercial applications. A robust design via finite-element method and design of experiment for RF devices based on carbon/graphene films and sandwiches is also discussed in the context of virtual prototyping.

FFT-impedance spectroscopy analysis of the growth of magnetic metal nanowires in ultra-high aspect ratio InP membranes

NASA Astrophysics Data System (ADS)

Gerngross, M.-D.; Carstensen, J.; Föll, H.; Adelung, R.

2016-01-01

This paper reports on the characterization of the electrochemical growth process of magnetic nanowires in ultra-high-aspect ratio InP membranes via in situ fast Fourier transform impedance spectroscopy in a typical frequency range from 75 Hz to 18.5 kHz. The measured impedance data from the Ni, Co, and FeCo can be very well fitted using the same electric equivalent circuit consisting of a series resistance in serial connection to an RC-element and a Maxwell element. The impedance data clearly indicate the similarities in the growth behavior of Ni, Co and FeCo nanowires in ultra-high aspect ratio InP membranes—the beneficial impact of boric acid on the metal deposition in ultra-high aspect ratio membranes and the diffusion limitation of boric acid, as well as differences such as passivation or side reactions.

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

PubMed Central

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Abstract Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlOx), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers. PMID:28634499

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

PubMed

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

Method of preforming and assembling superconducting circuit elements

NASA Astrophysics Data System (ADS)

Haertling, Gene H.; Buckley, John D.

1991-03-01

The invention is a method of preforming and pretesting rigid and discrete superconductor circuit elements to optimize the superconductivity development of the preformed circuit element prior to its assembly, and encapsulation on a substrate and final environmental testing of the assembled ceramic superconductive elements.

Enhanced photovoltaic performance of inverted pyramid-based nanostructured black-silicon solar cells passivated by an atomic-layer-deposited Al2O3 layer.

PubMed

Chen, Hong-Yan; Lu, Hong-Liang; Ren, Qing-Hua; Zhang, Yuan; Yang, Xiao-Feng; Ding, Shi-Jin; Zhang, David Wei

2015-10-07

Inverted pyramid-based nanostructured black-silicon (BS) solar cells with an Al2O3 passivation layer grown by atomic layer deposition (ALD) have been demonstrated. A multi-scale textured BS surface combining silicon nanowires (SiNWs) and inverted pyramids was obtained for the first time by lithography and metal catalyzed wet etching. The reflectance of the as-prepared BS surface was about 2% lower than that of the more commonly reported upright pyramid-based SiNW BS surface over the whole of the visible light spectrum, which led to a 1.7 mA cm(-2) increase in short circuit current density. Moreover, the as-prepared solar cells were further passivated by an ALD-Al2O3 layer. The effect of annealing temperature on the photovoltaic performance of the solar cells was investigated. It was found that the values of all solar cell parameters including short circuit current, open circuit voltage, and fill factor exhibit a further increase under an optimized annealing temperature. Minority carrier lifetime measurements indicate that the enhanced cell performance is due to the improved passivation quality of the Al2O3 layer after thermal annealing treatments. By combining these two refinements, the optimized SiNW BS solar cells achieved a maximum conversion efficiency enhancement of 7.6% compared to the cells with an upright pyramid-based SiNWs surface and conventional SiNx passivation.

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.

PubMed

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-10-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se 2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF 2 coated with a thin atomic layer deposited Al 2 O 3 layer, or direct current magnetron sputtering of Al 2 O 3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al 2 O 3 /CIGS rear interface. (MgF 2 /)Al 2 O 3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells.

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

PubMed Central

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-01-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. PMID:26300619

Modelling of piezoelectric actuator dynamics for active structural control

NASA Technical Reports Server (NTRS)

Hagood, Nesbitt W.; Chung, Walter H.; Von Flotow, Andreas

1990-01-01

The paper models the effects of dynamic coupling between a structure and an electrical network through the piezoelectric effect. The coupled equations of motion of an arbitrary elastic structure with piezoelectric elements and passive electronics are derived. State space models are developed for three important cases: direct voltage driven electrodes, direct charge driven electrodes, and an indirect drive case where the piezoelectric electrodes are connected to an arbitrary electrical circuit with embedded voltage and current sources. The equations are applied to the case of a cantilevered beam with surface mounted piezoceramics and indirect voltage and current drive. The theoretical derivations are validated experimentally on an actively controlled cantilevered beam test article with indirect voltage drive.

Large-Aperture Membrane Active Phased-Array Antennas

NASA Technical Reports Server (NTRS)

Karasik, Boris; McGrath, William; Leduc, Henry

2009-01-01

Large-aperture phased-array microwave antennas supported by membranes are being developed for use in spaceborne interferometric synthetic aperture radar systems. There may also be terrestrial uses for such antennas supported on stationary membranes, large balloons, and blimps. These antennas are expected to have areal mass densities of about 2 kg/sq m, satisfying a need for lightweight alternatives to conventional rigid phased-array antennas, which have typical areal mass densities between 8 and 15 kg/sq m. The differences in areal mass densities translate to substantial differences in total mass in contemplated applications involving aperture areas as large as 400 sq m. A membrane phased-array antenna includes patch antenna elements in a repeating pattern. All previously reported membrane antennas were passive antennas; this is the first active membrane antenna that includes transmitting/receiving (T/R) electronic circuits as integral parts. Other integral parts of the antenna include a network of radio-frequency (RF) feed lines (more specifically, a corporate feed network) and of bias and control lines, all in the form of flexible copper strip conductors on flexible polymeric membranes. Each unit cell of a prototype antenna (see Figure 1) contains a patch antenna element and a compact T/R module that is compatible with flexible membrane circuitry. There are two membrane layers separated by a 12.7-mm air gap. Each membrane layer is made from a commercially available flexible circuit material that, as supplied, comprises a 127-micron-thick polyimide dielectric layer clad on both sides with 17.5-micron-thick copper layers. The copper layers are patterned into RF, bias, and control conductors. The T/R module is located on the back side of the ground plane and is RF-coupled to the patch element via a slot. The T/R module is a hybrid multilayer module assembled and packaged independently and attached to the membrane array. At the time of reporting the information for this article, an 8 16 passive array (not including T/R modules) and a 2 4 active array (including T/R modules) had been demonstrated, and it was planned to fabricate and test larger arrays.

Contact stress sensor

DOEpatents

Kotovsky, Jack

2014-02-11

A method for producing a contact stress sensor that includes one or more MEMS fabricated sensor elements, where each sensor element of includes a thin non-recessed portion, a recessed portion and a pressure sensitive element adjacent to the recessed portion. An electric circuit is connected to the pressure sensitive element. The circuit includes a pressure signal circuit element configured to provide a signal upon movement of the pressure sensitive element.

Contact stress sensor

DOEpatents

Kotovsky, Jack [Oakland, CA

2012-02-07

A contact stress sensor includes one or more MEMS fabricated sensor elements, where each sensor element of includes a thin non-recessed portion, a recessed portion and a pressure sensitive element adjacent to the recessed portion. An electric circuit is connected to the pressure sensitive element. The circuit includes a thermal compensator and a pressure signal circuit element configured to provide a signal upon movement of the pressure sensitive element.

A Novel Intracranial Pressure Readout Circuit for Passive Wireless LC Sensor.

PubMed

Wang, Fa; Zhang, Xuan; Shokoueinejad, Mehdi; Iskandar, Bermans J; Medow, Joshua E; Webster, John G

2017-10-01

We present a wide frequency range, low cost, wireless intracranial pressure monitoring system, which includes an implantable passive sensor and an external reader. The passive sensor consists of two spiral coils and transduces the pressure change to a resonant frequency shift. The external portable reader reads out the sensor's resonant frequency over a wide frequency range (35 MHz-2.7 GHz). We propose a novel circuit topology, which tracks the system's impedance and phase change at a high frequency with low-cost components. This circuit is very simple and reliable. A prototype has been developed, and measurement results demonstrate that the device achieves a suitable measurement distance (>2 cm), sufficient sample frequency (>6 Hz), fine resolution, and good measurement accuracy for medical practice. Responsivity of this prototype is 0.92 MHz/mmHg and resolution is 0.028 mmHg. COMSOL specific absorption rate simulation proves that this system is safe. Considerations to improve the device performance have been discussed, which include the size of antenna, the power radiation, the Analog-to-digital converter (ADC) choice, and the signal processing algorithm.

Chemical vapor deposition for automatic processing of integrated circuits

NASA Technical Reports Server (NTRS)

Kennedy, B. W.

1980-01-01

Chemical vapor deposition for automatic processing of integrated circuits including the wafer carrier and loading from a receiving air track into automatic furnaces and unloading on to a sending air track is discussed. Passivation using electron beam deposited quartz is also considered.

Bismuth Passivation Technique for High-Resolution X-Ray Detectors

NASA Technical Reports Server (NTRS)

Chervenak, James; Hess, Larry

2013-01-01

The Athena-plus team requires X-ray sensors with energy resolution of better than one part in 3,000 at 6 keV X-rays. While bismuth is an excellent material for high X-ray stopping power and low heat capacity (for large signal when an X-ray is stopped by the absorber), oxidation of the bismuth surface can lead to electron traps and other effects that degrade the energy resolution. Bismuth oxide reduction and nitride passivation techniques analogous to those used in indium passivation are being applied in a new technique. The technique will enable improved energy resolution and resistance to aging in bismuth-absorber-coupled X-ray sensors. Elemental bismuth is lithographically integrated into X-ray detector circuits. It encounters several steps where the Bi oxidizes. The technology discussed here will remove oxide from the surface of the Bi and replace it with nitridized surface. Removal of the native oxide and passivating to prevent the growth of the oxide will improve detector performance and insulate the detector against future degradation from oxide growth. Placing the Bi coated sensor in a vacuum system, a reduction chemistry in a plasma (nitrogen/hydrogen (N2/H2) + argon) is used to remove the oxide and promote nitridization of the cleaned Bi surface. Once passivated, the Bi will perform as a better X-ray thermalizer since energy will not be trapped in the bismuth oxides on the surface. A simple additional step, which can be added at various stages of the current fabrication process, can then be applied to encapsulate the Bi film. After plasma passivation, the Bi can be capped with a non-diffusive layer of metal or dielectric. A non-superconducting layer is required such as tungsten or tungsten nitride (WNx).

Passivation on High Q Acoustic Strain Sensor for Accelerometer.

DTIC Science & Technology

1984-11-01

selection of passivation layers. Preliminary results indicated that V203 , (yttrium oxide ) and AIN (aluminum nitride) were the best materials for...thickness selection of passivation layers. Preliminary results indicated that Y203 (yttrium oxide ) and AIN (aluminum nitride) were the best materials...crystal, in this case a parabolic temperature characteristic. Several circuits were designed using varactor diode phase shifting networks. FOjcTl Ta tor

Power electronic interface circuits for batteries and ultracapacitors in electric vehicles and battery storage systems

DOEpatents

King, Robert Dean; DeDoncker, Rik Wivina Anna Adelson

1998-01-01

A method and apparatus for load leveling of a battery in an electrical power system includes a power regulator coupled to transfer power between a load and a DC link, a battery coupled to the DC link through a first DC-to-DC converter and an auxiliary passive energy storage device coupled to the DC link through a second DC-to-DC converter. The battery is coupled to the passive energy storage device through a unidirectional conducting device whereby the battery can supply power to the DC link through each of the first and second converters when battery voltage exceeds voltage on the passive storage device. When the load comprises a motor capable of operating in a regenerative mode, the converters are adapted for transferring power to the battery and passive storage device. In this form, resistance can be coupled in circuit with the second DC-to-DC converter to dissipate excess regenerative power.

Power electronic interface circuits for batteries and ultracapacitors in electric vehicles and battery storage systems

DOEpatents

King, R.D.; DeDoncker, R.W.A.A.

1998-01-20

A method and apparatus for load leveling of a battery in an electrical power system includes a power regulator coupled to transfer power between a load and a DC link, a battery coupled to the DC link through a first DC-to-DC converter and an auxiliary passive energy storage device coupled to the DC link through a second DC-to-DC converter. The battery is coupled to the passive energy storage device through a unidirectional conducting device whereby the battery can supply power to the DC link through each of the first and second converters when battery voltage exceeds voltage on the passive storage device. When the load comprises a motor capable of operating in a regenerative mode, the converters are adapted for transferring power to the battery and passive storage device. In this form, resistance can be coupled in circuit with the second DC-to-DC converter to dissipate excess regenerative power. 8 figs.

Design of 2.4Ghz CMOS Floating Active Inductor LNA using 130nm Technology

NASA Astrophysics Data System (ADS)

Muhamad, M.; Soin, N.; Ramiah, H.

2018-03-01

This paper presents about design and optimization of CMOS active inductor integrated circuit. This active inductor implements using Silterra 0.13μm technology and simulated using Cadence Virtuoso and Spectre RF. The center frequency for this active inductor is at 2.4 GHz which follow IEEE 802.11 b/g/n standard. To reduce the chip size of silicon, active inductor is used instead of passive inductor at low noise amplifier LNA circuit. This inductor test and analyse by low noise amplifier circuit. Comparison between active with passive inductor based on LNA circuit has been performed. Result shown that the active inductor has significantly reduce the chip size with 73 % area without sacrificing the noise figure and gain of LNA which is the most important criteria in LNA. The best low noise amplifier provides a power gain (S21) of 20.7 dB with noise figure (NF) of 2.1dB.

Surface and allied studies in silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1984-01-01

Significant improvements were made in the short-circuit current-decay method of measuring the recombination lifetime tau and the back surface recombination velocity S of the quasineutral base of silicon solar cells. The improvements include a circuit implementation that increases the speed of switching from the forward-voltage to the short-circuit conditions. They also include a supplementation of this method by some newly developed techniques employing small-signal admittance as a function of frequency omega. This supplementation is highly effective for determining tau for cases in which the diffusion length L greatly exceeds the base thickness W. Representative results on different solar cells are reported. Some advances made in the understanding of passivation provided by the polysilicon/silicon heterojunction are outlined. Recent measurements demonstrate that S 10,000 cm/s derive from this method of passivation.

Variable Delay Element For Jitter Control In High Speed Data Links

DOEpatents

Livolsi, Robert R.

2002-06-11

A circuit and method for decreasing the amount of jitter present at the receiver input of high speed data links which uses a driver circuit for input from a high speed data link which comprises a logic circuit having a first section (1) which provides data latches, a second section (2) which provides a circuit generates a pre-destorted output and for compensating for level dependent jitter having an OR function element and a NOR function element each of which is coupled to two inputs and to a variable delay element as an input which provides a bi-modal delay for pulse width pre-distortion, a third section (3) which provides a muxing circuit, and a forth section (4) for clock distribution in the driver circuit. A fifth section is used for logic testing the driver circuit.

Difference-Equation/Flow-Graph Circuit Analysis

NASA Technical Reports Server (NTRS)

Mcvey, I. M.

1988-01-01

Numerical technique enables rapid, approximate analyses of electronic circuits containing linear and nonlinear elements. Practiced in variety of computer languages on large and small computers; for circuits simple enough, programmable hand calculators used. Although some combinations of circuit elements make numerical solutions diverge, enables quick identification of divergence and correction of circuit models to make solutions converge.

Addressing On-Chip Power Converstion and Dissipation Issues in Many-Core System-on-a-Chip Based on Conventional Silicon and Emerging Nanotechnologies

NASA Astrophysics Data System (ADS)

Ashenafi, Emeshaw

Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC allows various small and large electronic systems to be implemented in a single chip. This approach enables the miniaturization of design blocks that leads to high density transistor integration, faster response time, and lower fabrication costs. To reap the benefits of SOC and uphold the miniaturization of transistors, innovative power delivery and power dissipation management schemes are paramount. This dissertation focuses on on-chip integration of power delivery systems and managing power dissipation to increase the lifetime of energy storage elements. We explore this problem from two different angels: On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce parasitic effects, and allow faster and efficient power delivery for microprocessors. Power gating techniques, on the other hand, reduce the power loss incurred by circuit blocks during standby mode. Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic dependency on the dynamic switching power and a more than linear dependency on static power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power loss, the supply power should be reduced. A significant reduction in power dissipation occurs when portions of a microprocessor operate at a lower voltage level. This reduction in supply voltage is achieved via voltage regulators or converters. Voltage regulators are used to provide a stable power supply to the microprocessor. The conventional off-chip switching voltage regulator contains a passive floating inductor, which is difficult to be implemented inside the chip due to excessive power dissipation and parasitic effects. Additionally, the inductor takes a very large chip area while hampering the scaling process. These limitations make passive inductor based on-chip regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse-with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon-on-ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability to control the threshold voltage via bias voltage at the back gate makes both devices more flexible for sleep transistors design than a bulk MOSFET. The proposed approaches simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep transistor, and improve power dissipation. In addition, the design provides a dynamically controlled Vt for times when the circuit needs to be in a sleep or switching mode.

Monolithic amplifier with stable, high resistance feedback element and method for fabricating the same

DOEpatents

O'Connor, Paul

1998-08-11

A monolithic amplifier includes a stable, high resistance feedback circuit and a dynamic bias circuit. The dynamic bias circuit is formed with active elements matched to those in the amplifier and feedback circuit to compensate for variations in the operating and threshold voltages thereby maintaining a stable resistance in the feedback circuit.

Front surface passivation of silicon solar cells with antireflection coating

NASA Technical Reports Server (NTRS)

Crotty, G.; Daud, T.; Kachare, R.

1987-01-01

It is demonstrated that the deposition and postdeposition sintering of an antireflection (AR) coating in hydrogen acts to passivate silicon solar cells. Cells with and without an SiO2 passivating layer, coated with a TiO(x)/Al2O3 AR coating, showed comparable enhancements in short-wavelength spectral response and in open-circuit voltage Voc after sintering at 400 C for 5 min in a hydrogen ambient. The improvement in Voc of cells without SiO2 is attributed to front-surface passivation by the AR coating during processing.

Phased-Array Antenna With Optoelectronic Control Circuits

NASA Technical Reports Server (NTRS)

Kunath, Richard R.; Shalkhauser, Kurt A.; Martzaklis, Konstantinos; Lee, Richard Q.; Downey, Alan N.; Simons, Rainee N.

1995-01-01

Prototype phased-array antenna features control of amplitude and phase at each radiating element. Amplitude- and phase-control signals transmitted on optical fiber to optoelectronic interface circuit (OEIC), then to monolithic microwave integrated circuit (MMIC) at each element. Offers advantages of flexible, rapid electronic steering and shaping of beams. Furthermore, greater number of elements, less overall performance of antenna degraded by malfunction in single element.

New high-efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Daud, T.; Crotty, G. T.

1985-01-01

A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.

Graphene/Si CMOS Hybrid Hall Integrated Circuits

PubMed Central

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-01-01

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process. PMID:24998222

Graphene/Si CMOS hybrid hall integrated circuits.

PubMed

Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

2014-07-07

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

Pressure-Transducer Simulator

NASA Technical Reports Server (NTRS)

Simon, Richard A.

1987-01-01

Simulation circuit operates under remote, automatic, or manual control to produce electrical outputs similar to pressure transducer. Specific circuit designed for simulations of Space Shuttle main engine. General circuit concept adaptable to other simulation and control systems involving several operating modes. Switches and amplifiers respond to external control signals and panel control settings to vary differential excitation of resistive bridge. Output voltage or passive terminal resistance made to equal pressure transducer in any of four operating modes.

Capillarics: pre-programmed, self-powered microfluidic circuits built from capillary elements.

PubMed

Safavieh, Roozbeh; Juncker, David

2013-11-07

Microfluidic capillary systems employ surface tension effects to manipulate liquids, and are thus self-powered and self-regulated as liquid handling is structurally and chemically encoded in microscale conduits. However, capillary systems have been limited to perform simple fluidic operations. Here, we introduce complex capillary flow circuits that encode sequential flow of multiple liquids with distinct flow rates and flow reversal. We first introduce two novel microfluidic capillary elements including (i) retention burst valves and (ii) robust low aspect ratio trigger valves. These elements are combined with flow resistors, capillary retention valves, capillary pumps, and open and closed reservoirs to build a capillary circuit that, following sample addition, autonomously delivers a defined sequence of multiple chemicals according to a preprogrammed and predetermined flow rate and time. Such a circuit was used to measure the concentration of C-reactive protein. This work illustrates that as in electronics, complex capillary circuits may be built by combining simple capillary elements. We define such circuits as "capillarics", and introduce symbolic representations. We believe that more complex circuits will become possible by expanding the library of building elements and formulating abstract design rules.

Monolithic amplifier with stable, high resistance feedback element and method for fabricating the same

DOEpatents

O`Connor, P.

1998-08-11

A monolithic amplifier includes a stable, high resistance feedback circuit and a dynamic bias circuit. The dynamic bias circuit is formed with active elements matched to those in the amplifier and feedback circuit to compensate for variations in the operating and threshold voltages thereby maintaining a stable resistance in the feedback circuit. 11 figs.

Electronic Switch Arrays for Managing Microbattery Arrays

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Alahmad, Mahmoud; Sukumar, Vinesh; Zghoul, Fadi; Buck, Kevin; Hess, Herbert; Li, Harry; Cox, David

2008-01-01

Integrated circuits have been invented for managing the charging and discharging of such advanced miniature energy-storage devices as planar arrays of microscopic energy-storage elements [typically, microscopic electrochemical cells (microbatteries) or microcapacitors]. The architecture of these circuits enables implementation of the following energy-management options: dynamic configuration of the elements of an array into a series or parallel combination of banks (subarrarys), each array comprising a series of parallel combination of elements; direct addressing of individual banks for charging/or discharging; and, disconnection of defective elements and corresponding reconfiguration of the rest of the array to utilize the remaining functional elements to obtain the desited voltage and current performance. An integrated circuit according to the invention consists partly of a planar array of field-effect transistors that function as switches for routing electric power among the energy-storage elements, the power source, and the load. To connect the energy-storage elements to the power source for charging, a specific subset of switches is closed; to connect the energy-storage elements to the load for discharging, a different specific set of switches is closed. Also included in the integrated circuit is circuitry for monitoring and controlling charging and discharging. The control and monitoring circuitry, the switching transistors, and interconnecting metal lines are laid out on the integrated-circuit chip in a pattern that registers with the array of energy-storage elements. There is a design option to either (1) fabricate the energy-storage elements in the corresponding locations on, and as an integral part of, this integrated circuit; or (2) following a flip-chip approach, fabricate the array of energy-storage elements on a separate integrated-circuit chip and then align and bond the two chips together.

OLED panel with fuses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levermore, Levermore; Pang, Huiqing; Rajan, Kamala

2014-09-16

Embodiments may provide a first device that may comprise a substrate, a plurality of conductive bus lines disposed over the substrate, and a plurality of OLED circuit elements disposed on the substrate, where each of the OLED circuit elements comprises one and only one pixel electrically connected in series with a fuse. Each pixel may further comprise a first electrode, a second electrode, and an organic electroluminescent (EL) material disposed between the first and the second electrodes. The fuse of each of the plurality of OLED circuit elements may electrically connect each of the OLED circuit elements to at leastmore » one of the plurality of bus lines. Each of the plurality of bus lines may be electrically connected to a plurality of OLED circuit elements that are commonly addressable and at least two of the bus lines may be separately addressable.« less

Photogate Timing with a Smartphone

ERIC Educational Resources Information Center

Forinash, Kyle; Wisman, Raymond F.

2015-01-01

In a previous article we demonstrated that a simple, passive external circuit incorporating a thermistor, connected to a mobile device through the headset jack, can be used to collect temperature data. The basic approach is to output a sine wave signal to the headset port, through the circuit, and input the resulting signal from the headset…

Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

PubMed

Aull, Brian

2016-04-08

This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

Chip-integrated optical power limiter based on an all-passive micro-ring resonator

NASA Astrophysics Data System (ADS)

Yan, Siqi; Dong, Jianji; Zheng, Aoling; Zhang, Xinliang

2014-10-01

Recent progress in silicon nanophotonics has dramatically advanced the possible realization of large-scale on-chip optical interconnects integration. Adopting photons as information carriers can break the performance bottleneck of electronic integrated circuit such as serious thermal losses and poor process rates. However, in integrated photonics circuits, few reported work can impose an upper limit of optical power therefore prevent the optical device from harm caused by high power. In this study, we experimentally demonstrate a feasible integrated scheme based on a single all-passive micro-ring resonator to realize the optical power limitation which has a similar function of current limiting circuit in electronics. Besides, we analyze the performance of optical power limiter at various signal bit rates. The results show that the proposed device can limit the signal power effectively at a bit rate up to 20 Gbit/s without deteriorating the signal. Meanwhile, this ultra-compact silicon device can be completely compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may pave the way of very large scale integrated photonic circuits for all-optical information processors and artificial intelligence systems.

The relationship between alloying elements and biologically produced ennoblement in natural waters.

PubMed

Eashwar, M; Lakshman Kumar, A; Hariharasuthan, R; Sreedhar, G

2015-01-01

A range of stainless steels, nickel-chromium and nickel-chromium-molybdenum alloys were exposed to coastal seawater from Mandapam (Indian Ocean) and freshwater from a perennial pond. Biofilms from both test waters produced an ennoblement of the open circuit potential (OCP) on all alloys as expected, which was slower but substantially larger in freshwater. In both waters an interesting relationship was perceived between the plateau OCP (Emax) and the mass percentage of the major alloying elements. In particular, iron exhibited strong positive correlations with Emax (r(2) ≥ 0.77; p < 0.0005), while the sum of chromium, nickel and molybdenum presented significant negative correlations (r(2) ≤ -0.81; p = 0.0002). Consistent with the regression analyses, Euclidean distance clustering yielded patterns where Inconel-600 and the nickel-chromium-molybdenum alloys had the smallest similarities of OCP with other alloys. The results emphatically reinforce a key role for surface passive films in the ennoblement phenomenon in natural waters.

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Piezoelectric drive circuit

DOEpatents

Treu, C.A. Jr.

1999-08-31

A piezoelectric motor drive circuit is provided which utilizes the piezoelectric elements as oscillators and a Meacham half-bridge approach to develop feedback from the motor ground circuit to produce a signal to drive amplifiers to power the motor. The circuit automatically compensates for shifts in harmonic frequency of the piezoelectric elements due to pressure and temperature changes. 7 figs.

Piezoelectric drive circuit

DOEpatents

Treu, Jr., Charles A.

1999-08-31

A piezoelectric motor drive circuit is provided which utilizes the piezoelectric elements as oscillators and a Meacham half-bridge approach to develop feedback from the motor ground circuit to produce a signal to drive amplifiers to power the motor. The circuit automatically compensates for shifts in harmonic frequency of the piezoelectric elements due to pressure and temperature changes.

A Circuit to Demonstrate Phase Relationships in "RLC" Circuits

ERIC Educational Resources Information Center

Sokol, P. E.; Warren, G.; Zheng, B.; Smith, P.

2013-01-01

We have developed a circuit to demonstrate the phase relationships between resistive and reactive elements in series "RLC" circuits. We utilize a differential amplifier to allow the phases of the three elements and the current to be simultaneously displayed on an inexpensive four channel oscilloscope. We have included a novel circuit…

Sequential circuit design for radiation hardened multiple voltage integrated circuits

DOEpatents

Clark, Lawrence T [Phoenix, AZ; McIver, III, John K.

2009-11-24

The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

On-chip passive three-port circuit of all-optical ordered-route transmission.

PubMed

Liu, Li; Dong, Jianji; Gao, Dingshan; Zheng, Aoling; Zhang, Xinliang

2015-05-13

On-chip photonic circuits of different specific functions are highly desirable and becoming significant demands in all-optical communication network. Especially, the function to control the transmission directions of the optical signals in integrated circuits is a fundamental research. Previous schemes, such as on-chip optical circulators, are mostly realized by Faraday effect which suffers from material incompatibilities between semiconductors and magneto-optical materials. Achieving highly functional circuits in which light circulates in a particular direction with satisfied performances are still difficult in pure silicon photonics platform. Here, we propose and experimentally demonstrate a three-port passive device supporting optical ordered-route transmission based on silicon thermo-optic effect for the first time. By injecting strong power from only one port, the light could transmit through the three ports in a strict order (1→2, 2→3, 3→1) while be blocked in the opposite order (1→3, 3→2, 2→1). The blocking extinction ratios and operation bandwidths have been investigated in this paper. Moreover, with compact size, economic fabrication process and great extensibility, this proposed photonic integrated circuit is competitive to be applied in on-chip all-optical information processing systems, such as path priority selector.

Nuclear reactor with makeup water assist from residual heat removal system

DOEpatents

Corletti, Michael M.; Schulz, Terry L.

1993-01-01

A pressurized water nuclear reactor uses its residual heat removal system to make up water in the reactor coolant circuit from an in-containment refueling water supply during staged depressurization leading up to passive emergency cooling by gravity feed from the refueling water storage tank, and flooding of the containment building. When depressurization commences due to inadvertence or a manageable leak, the residual heat removal system is activated manually and prevents flooding of the containment when such action is not necessary. Operation of the passive cooling system is not impaired. A high pressure makeup water storage tank is coupled to the reactor coolant circuit, holding makeup coolant at the operational pressure of the reactor. The staged depressurization system vents the coolant circuit to the containment, thus reducing the supply of makeup coolant. The level of makeup coolant can be sensed to trigger opening of successive depressurization conduits. The residual heat removal pumps move water from the refueling water storage tank into the coolant circuit as the coolant circuit is depressurized, preventing reaching the final depressurization stage unless the makeup coolant level continues to drop. The residual heat removal system can also be coupled in a loop with the refueling water supply tank, for an auxiliary heat removal path.

Nuclear reactor with makeup water assist from residual heat removal system

DOEpatents

Corletti, M.M.; Schulz, T.L.

1993-12-07

A pressurized water nuclear reactor uses its residual heat removal system to make up water in the reactor coolant circuit from an in-containment refueling water supply during staged depressurization leading up to passive emergency cooling by gravity feed from the refueling water storage tank, and flooding of the containment building. When depressurization commences due to inadvertence or a manageable leak, the residual heat removal system is activated manually and prevents flooding of the containment when such action is not necessary. Operation of the passive cooling system is not impaired. A high pressure makeup water storage tank is coupled to the reactor coolant circuit, holding makeup coolant at the operational pressure of the reactor. The staged depressurization system vents the coolant circuit to the containment, thus reducing the supply of makeup coolant. The level of makeup coolant can be sensed to trigger opening of successive depressurization conduits. The residual heat removal pumps move water from the refueling water storage tank into the coolant circuit as the coolant circuit is depressurized, preventing reaching the final depressurization stage unless the makeup coolant level continues to drop. The residual heat removal system can also be coupled in a loop with the refueling water supply tank, for an auxiliary heat removal path. 2 figures.

On-chip passive three-port circuit of all-optical ordered-route transmission

PubMed Central

Liu, Li; Dong, Jianji; Gao, Dingshan; Zheng, Aoling; Zhang, Xinliang

2015-01-01

On-chip photonic circuits of different specific functions are highly desirable and becoming significant demands in all-optical communication network. Especially, the function to control the transmission directions of the optical signals in integrated circuits is a fundamental research. Previous schemes, such as on-chip optical circulators, are mostly realized by Faraday effect which suffers from material incompatibilities between semiconductors and magneto-optical materials. Achieving highly functional circuits in which light circulates in a particular direction with satisfied performances are still difficult in pure silicon photonics platform. Here, we propose and experimentally demonstrate a three-port passive device supporting optical ordered-route transmission based on silicon thermo-optic effect for the first time. By injecting strong power from only one port, the light could transmit through the three ports in a strict order (1→2, 2→3, 3→1) while be blocked in the opposite order (1→3, 3→2, 2→1). The blocking extinction ratios and operation bandwidths have been investigated in this paper. Moreover, with compact size, economic fabrication process and great extensibility, this proposed photonic integrated circuit is competitive to be applied in on-chip all-optical information processing systems, such as path priority selector. PMID:25970855

Full Wave Analysis of Passive Microwave Monolithic Integrated Circuit Devices Using a Generalized Finite Difference Time Domain (GFDTD) Algorithm

NASA Technical Reports Server (NTRS)

Lansing, Faiza S.; Rascoe, Daniel L.

1993-01-01

This paper presents a modified Finite-Difference Time-Domain (FDTD) technique using a generalized conformed orthogonal grid. The use of the Conformed Orthogonal Grid, Finite Difference Time Domain (GFDTD) enables the designer to match all the circuit dimensions, hence eliminating a major source o error in the analysis.

A Complete Multimode Equivalent-Circuit Theory for Electrical Design

PubMed Central

Williams, Dylan F.; Hayden, Leonard A.; Marks, Roger B.

1997-01-01

This work presents a complete equivalent-circuit theory for lossy multimode transmission lines. Its voltages and currents are based on general linear combinations of standard normalized modal voltages and currents. The theory includes new expressions for transmission line impedance matrices, symmetry and lossless conditions, source representations, and the thermal noise of passive multiports. PMID:27805153

30 CFR 75.601-3 - Short circuit protection; dual element fuses; current ratings; maximum values.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Trailing Cables § 75.601-3 Short circuit protection; dual element fuses; current ratings; maximum values... circuit protection of trailing cables as provided in § 75.601, however, the current ratings of such...

Correlation Between Analog Noise Measurements and the Expected Bit Error Rate of a Digital Signal Propagating Through Passive Components

NASA Technical Reports Server (NTRS)

Warner, Joseph D.; Theofylaktos, Onoufrios

2012-01-01

A method of determining the bit error rate (BER) of a digital circuit from the measurement of the analog S-parameters of the circuit has been developed. The method is based on the measurement of the noise and the standard deviation of the noise in the S-parameters. Once the standard deviation and the mean of the S-parameters are known, the BER of the circuit can be calculated using the normal Gaussian function.

Scale-free networks as an epiphenomenon of memory

NASA Astrophysics Data System (ADS)

Caravelli, F.; Hamma, A.; Di Ventra, M.

2015-01-01

Many realistic networks are scale free, with small characteristic path lengths, high clustering, and power law in their degree distribution. They can be obtained by dynamical networks in which a preferential attachment process takes place. However, this mechanism is non-local, in the sense that it requires knowledge of the whole graph in order for the graph to be updated. Instead, if preferential attachment and realistic networks occur in physical systems, these features need to emerge from a local model. In this paper, we propose a local model and show that a possible ingredient (which is often underrated) for obtaining scale-free networks with local rules is memory. Such a model can be realised in solid-state circuits, using non-linear passive elements with memory such as memristors, and thus can be tested experimentally.

Integrated polarization beam splitter with relaxed fabrication tolerances.

PubMed

Pérez-Galacho, D; Halir, R; Ortega-Moñux, A; Alonso-Ramos, C; Zhang, R; Runge, P; Janiak, K; Bach, H-G; Steffan, A G; Molina-Fernández, Í

2013-06-17

Polarization handling is a key requirement for the next generation of photonic integrated circuits (PICs). Integrated polarization beam splitters (PBS) are central elements for polarization management, but their use in PICs is hindered by poor fabrication tolerances. In this work we present a fully passive, highly fabrication tolerant polarization beam splitter, based on an asymmetrical Mach-Zehnder interferometer (MZI) with a Si/SiO(2) Periodic Layer Structure (PLS) on top of one of its arms. By engineering the birefringence of the PLS we are able to design the MZI arms so that sensitivities to the most critical fabrication errors are greatly reduced. Our PBS design tolerates waveguide width variations of 400nm maintaining a polarization extinction ratio better than 13dB in the complete C-Band.

Predicting the behavior of microfluidic circuits made from discrete elements

PubMed Central

Bhargava, Krisna C.; Thompson, Bryant; Iqbal, Danish; Malmstadt, Noah

2015-01-01

Microfluidic devices can be used to execute a variety of continuous flow analytical and synthetic chemistry protocols with a great degree of precision. The growing availability of additive manufacturing has enabled the design of microfluidic devices with new functionality and complexity. However, these devices are prone to larger manufacturing variation than is typical of those made with micromachining or soft lithography. In this report, we demonstrate a design-for-manufacturing workflow that addresses performance variation at the microfluidic element and circuit level, in context of mass-manufacturing and additive manufacturing. Our approach relies on discrete microfluidic elements that are characterized by their terminal hydraulic resistance and associated tolerance. Network analysis is employed to construct simple analytical design rules for model microfluidic circuits. Monte Carlo analysis is employed at both the individual element and circuit level to establish expected performance metrics for several specific circuit configurations. A protocol based on osmometry is used to experimentally probe mixing behavior in circuits in order to validate these approaches. The overall workflow is applied to two application circuits with immediate use at on the bench-top: series and parallel mixing circuits that are modularly programmable, virtually predictable, highly precise, and operable by hand. PMID:26516059

An adjustable RF tuning element for microwave, millimeter wave, and submillimeter wave integrated circuits

NASA Technical Reports Server (NTRS)

Lubecke, Victor M.; Mcgrath, William R.; Rutledge, David B.

1991-01-01

Planar RF circuits are used in a wide range of applications from 1 GHz to 300 GHz, including radar, communications, commercial RF test instruments, and remote sensing radiometers. These circuits, however, provide only fixed tuning elements. This lack of adjustability puts severe demands on circuit design procedures and materials parameters. We have developed a novel tuning element which can be incorporated into the design of a planar circuit in order to allow active, post-fabrication tuning by varying the electrical length of a coplanar strip transmission line. It consists of a series of thin plates which can slide in unison along the transmission line, and the size and spacing of the plates are designed to provide a large reflection of RF power over a useful frequency bandwidth. Tests of this structure at 1 GHz to 3 Ghz showed that it produced a reflection coefficient greater than 0.90 over a 20 percent bandwidth. A 2 GHz circuit incorporating this tuning element was also tested to demonstrate practical tuning ranges. This structure can be fabricated for frequencies as high as 1000 GHz using existing micromachining techniques. Many commercial applications can benefit from this micromechanical RF tuning element, as it will aid in extending microwave integrated circuit technology into the high millimeter wave and submillimeter wave bands by easing constraints on circuit technology.

Screen printed passive components for flexible power electronics

NASA Astrophysics Data System (ADS)

Ostfeld, Aminy E.; Deckman, Igal; Gaikwad, Abhinav M.; Lochner, Claire M.; Arias, Ana C.

2015-10-01

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components—inductors, capacitors, and resistors—perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application.

Screen printed passive components for flexible power electronics

PubMed Central

Ostfeld, Aminy E.; Deckman, Igal; Gaikwad, Abhinav M.; Lochner, Claire M.; Arias, Ana C.

2015-01-01

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components—inductors, capacitors, and resistors—perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application. PMID:26514331

Screen printed passive components for flexible power electronics.

PubMed

Ostfeld, Aminy E; Deckman, Igal; Gaikwad, Abhinav M; Lochner, Claire M; Arias, Ana C

2015-10-30

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components-inductors, capacitors, and resistors-perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application.

A New Approach to Identify Optimal Properties of Shunting Elements for Maximum Damping of Structural Vibration Using Piezoelectric Patches

NASA Technical Reports Server (NTRS)

Park, Junhong; Palumbo, Daniel L.

2004-01-01

The use of shunted piezoelectric patches in reducing vibration and sound radiation of structures has several advantages over passive viscoelastic elements, e.g., lower weight with increased controllability. The performance of the piezoelectric patches depends on the shunting electronics that are designed to dissipate vibration energy through a resistive element. In past efforts most of the proposed tuning methods were based on modal properties of the structure. In these cases, the tuning applies only to one mode of interest and maximum tuning is limited to invariant points when based on den Hartog's invariant points concept. In this study, a design method based on the wave propagation approach is proposed. Optimal tuning is investigated depending on the dynamic and geometric properties that include effects from boundary conditions and position of the shunted piezoelectric patch relative to the structure. Active filters are proposed as shunting electronics to implement the tuning criteria. The developed tuning methods resulted in superior capabilities in minimizing structural vibration and noise radiation compared to other tuning methods. The tuned circuits are relatively insensitive to changes in modal properties and boundary conditions, and can applied to frequency ranges in which multiple modes have effects.

An injection and mixing element for delivery and monitoring of inhaled nitric oxide.

PubMed

Martin, Andrew R; Jackson, Chris; Fromont, Samuel; Pont, Chloe; Katz, Ira M; Caillobotte, Georges

2016-08-30

Inhaled nitric oxide (NO) is a selective pulmonary vasodilator used primarily in the critical care setting for patients concurrently supported by invasive or noninvasive positive pressure ventilation. NO delivery devices interface with ventilator breathing circuits to inject NO in proportion with the flow of air/oxygen through the circuit, in order to maintain a constant, target concentration of inhaled NO. In the present article, a NO injection and mixing element is presented. The device borrows from the design of static elements to promote rapid mixing of injected NO-containing gas with breathing circuit gases. Bench experiments are reported to demonstrate the improved mixing afforded by the injection and mixing element, as compared with conventional breathing circuit adapters, for NO injection into breathing circuits. Computational fluid dynamics simulations are also presented to illustrate mixing patterns and nitrogen dioxide production within the element. Over the range of air flow rates and target NO concentrations investigated, mixing length, defined as the downstream distance required for NO concentration to reach within ±5 % of the target concentration, was as high as 47 cm for the conventional breathing circuit adapters, but did not exceed 7.8 cm for the injection and mixing element. The injection and mixing element has potential to improve ease of use, compatibility and safety of inhaled NO administration with mechanical ventilators and gas delivery devices.

Magnetomicrofluidics Circuits for Organizing Bioparticle Arrays

NASA Astrophysics Data System (ADS)

Abedini-Nassab, Roozbeh

Single-cell analysis (SCA) tools have important applications in the analysis of phenotypic heterogeneity, which is difficult or impossible to analyze in bulk cell culture or patient samples. SCA tools thus have a myriad of applications ranging from better credentialing of drug therapies to the analysis of rare latent cells harboring HIV infection or in Cancer. However, existing SCA systems usually lack the required combination of programmability, flexibility, and scalability necessary to enable the study of cell behaviors and cell-cell interactions at the scales sufficient to analyze extremely rare events. To advance the field, I have developed a novel, programmable, and massively-parallel SCA tool which is based on the principles of computer circuits. By integrating these magnetic circuits with microfluidics channels, I developed a platform that can organize a large number of single particles into an array in a controlled manner. My magnetophoretic circuits use passive elements constructed in patterned magnetic thin films to move cells along programmed tracks with an external rotating magnetic field. Cell motion along these tracks is analogous to the motion of charges in an electrical conductor, following a rule similar to Ohm's law. I have also developed asymmetric conductors, similar to electrical diodes, and storage sites for cells that behave similarly to electrical capacitors. I have also developed magnetophoretic circuits which use an overlaid pattern of microwires to switch single cells between different tracks. This switching mechanism, analogous to the operation of electronic transistors, is achieved by establishing a semiconducting gap in the magnetic pattern which can be changed from an insulating state to a conducting state by application of electrical current to an overlaid electrode. I performed an extensive study on the operation of transistors to optimize their geometry and minimize the required gate currents. By combining these elements into integrated circuits, I have built devices which are capable of organizing a precise number of cells into individually addressable array sites, similar to how a random access memory (RAM) stores electronic data. My programmable magnetic circuits allow for the organization of both cells and single-cell pairs into large arrays. Single cells can also potentially be retrieved for downstream high-throughput genomic analysis. In order to enhance the efficiency of the tool and to increase the delivery speed of the particles, I have also developed microfluidics systems that are combined with the magnetophoretic circuits. This hybrid system, called magnetomicrofluidics, is capable of rapidly organizing an array of particles and cells with the high precision and control. I have also shown that cells can be grown inside these chips for multiple days, enabling the long-term phenotypic analysis of rare cellular events. These types of studies can reveal important insights about the intercellular signaling networks and answer crucial questions in biology and immunology.

Passive Resonant Bidirectional Converter with Galvanic Barrier

NASA Technical Reports Server (NTRS)

Rosenblad, Nathan S. (Inventor)

2014-01-01

A passive resonant bidirectional converter system that transports energy across a galvanic barrier includes a converter using at least first and second converter sections, each section including a pair of transfer terminals, a center tapped winding; a chopper circuit interconnected between the center tapped winding and one of the transfer terminals; an inductance feed winding interconnected between the other of the transfer terminals and the center tap and a resonant tank circuit including at least the inductance of the center tap winding and the parasitic capacitance of the chopper circuit for operating the converter section at resonance; the center tapped windings of the first and second converter sections being disposed on a first common winding core and the inductance feed windings of the first and second converter sections being disposed on a second common winding core for automatically synchronizing the resonant oscillation of the first and second converter sections and transferring energy between the converter sections until the voltage across the pairs of transfer terminals achieves the turns ratio of the center tapped windings.

Optimization of Passive Voltage Multipliers for Fast Start-up and Multi-voltage Power Supplies in Electromagnetic Energy Harvesting Systems

NASA Astrophysics Data System (ADS)

Yang, G.; Stark, B. H.; Burrow, S. G.; Hollis, S. J.

2014-11-01

This paper demonstrates the use of passive voltage multipliers for rapid start-up of sub-milliwatt electromagnetic energy harvesting systems. The work describes circuit optimization to make as short as possible the transition from completely depleted energy storage to the first powering-up of an actively controlled switched-mode converter. The dependency of the start-up time on component parameters and topologies is derived by simulation and experimentation. The resulting optimized multiplier design reduces the start-up time from several minutes to 1 second. An additional improvement uses the inherent cascade structure of the voltage multiplier to power sub-systems at different voltages. This multi-rail start-up is shown to reduce the circuit losses of the active converter by 72% with respect to the optimized single-rail system. The experimental results provide insight into the multiplier's transient behaviour, including circuit interactions, in a complete harvesting system, and offer important information to optimize voltage multipliers for rapid start-up.

Viewing Integrated-Circuit Interconnections By SEM

NASA Technical Reports Server (NTRS)

Lawton, Russel A.; Gauldin, Robert E.; Ruiz, Ronald P.

1990-01-01

Back-scattering of energetic electrons reveals hidden metal layers. Experiment shows that with suitable operating adjustments, scanning electron microscopy (SEM) used to look for defects in aluminum interconnections in integrated circuits. Enables monitoring, in situ, of changes in defects caused by changes in temperature. Gives truer picture of defects, as etching can change stress field of metal-and-passivation pattern, causing changes in defects.

Developing and Evaluating a Flexible Wireless Microcoil Array Based Integrated Interface for Epidural Cortical Stimulation.

PubMed

Wang, Xing; Chaudhry, Sharjeel A; Hou, Wensheng; Jia, Xiaofeng

2017-02-05

Stroke leads to serious long-term disability. Electrical epidural cortical stimulation has made significant improvements in stroke rehabilitation therapy. We developed a preliminary wireless implantable passive interface, which consists of a stimulating surface electrode, receiving coil, and single flexible passive demodulated circuit printed by flexible printed circuit (FPC) technique and output pulse voltage stimulus by inductively coupling an external circuit. The wireless implantable board was implanted in cats' unilateral epidural space for electrical stimulation of the primary visual cortex (V1) while the evoked responses were recorded on the contralateral V1 using a needle electrode. The wireless implantable board output stable monophasic voltage stimuli. The amplitude of the monophasic voltage output could be adjusted by controlling the voltage of the transmitter circuit within a range of 5-20 V. In acute experiment, cortico-cortical evoked potential (CCEP) response was recorded on the contralateral V1. The amplitude of N2 in CCEP was modulated by adjusting the stimulation intensity of the wireless interface. These results demonstrated that a wireless interface based on a microcoil array can offer a valuable tool for researchers to explore electrical stimulation in research and the dura mater-electrode interface can effectively transmit electrical stimulation.

All-semiconductor metamaterial-based optical circuit board at the microscale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Min, Li; Huang, Lirong, E-mail: lrhuang@hust.edu.cn

2015-07-07

The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arrangingmore » anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.« less

Paralleling power MOSFETs in their active region: Extended range of passively forced current sharing

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

1989-01-01

A simple passive circuit that improves current balance in parallelled power MOSFETs that are not precisely matched and that are operated in their active region from a common gate drive are exhibited. A nonlinear circuit consisting of diodes and resistors generates the differential gate potential required to correct for unbalance while maintaining low losses over a range of current. Also application of a thin tape wound magnetic core to effect dynamic current balance is reviewed, and a simple theory is presented showing that for operation in the active region the branch currents tend to revert to their normal unbalanced values even if the core is not driven into saturation. Results of several comparative experiments are given.

Large Signal Modeling and Analysis of the GaAs MESFET.

DTIC Science & Technology

1986-07-09

various dimensions and physical parameters. A powerful computer aided design system can be developed by automating the circuit element and parameter...circuit model of the GaAs MESFET to aid in the designs of microwave MESFET circuits. The circuit elements of this model are obtained either directly...34. -. ’ Abstract The purpose of this work is to develop a large signal signal lumped circuit model of the GaAs MESFET to aid In the designs of microwave MESFET

Oxygen consumption, heart rate and oxygen pulse associated with selected exercise-to-muscle class elements.

PubMed Central

Abernethy, P; Batman, P

1994-01-01

The purpose of the investigation was to determine the relative oxygen consumption (VO2), heart rate and oxygen pulse associated with the constituent elements of an exercise-to-music class. Six women exercise-to-music leaders with a mean(s.d.) age, weight and height of 33.2(5.2) years, 51.0(2.8) kg and 157.9(5.6) cm respectively, completed five distinct exercise-to-music movement elements. The movement elements were of a locomoter (circuit, jump and low impact) and callisthenic (prone and side/supine) nature. The movement elements were distinguishable from one another in terms of their movement patterns, posture and tempo. Relative VO2 values were greatest for the circuit element (40.6 ml kg-1 min-1) and least for the side/supine element (20.0 ml kg-1 min-1). The differences in VO2 between the locomotrr and callisthenic elements were significant (circuit approximately jump approximately low impact > prone approximately side/supine). However, effect size data suggested that the differences between the low impact and jump elements and the prone and side/supine elements were of practical significance (circuit approximately jump > low impact > prone > side/supine). With a single exception similar parametric statistics and effect size trends were identified for absolute heart rate. Specifically, the heart rate associated with the low impact element was not significantly greater than the prone element. The oxygen pulse associated with the locomotor elements was significantly greater than the callisthenic elements (circuit approximately jump approximately low impact > prone > side/supine). This suggested that heart rate may be an inappropriate index for making comparisons between exercise-to-music elements. Reasons for differences in oxygen uptake values between movement elements are discussed. PMID:8044493

Four-to-one power combiner for 20 GHz phased array antenna using RADC MMIC phase shifters

NASA Technical Reports Server (NTRS)

1991-01-01

The design and microwave simulation of two-to-one microstrip power combiners is described. The power combiners were designed for use in a four element phase array receive antenna subarray at 20 GHz. Four test circuits are described which were designed to enable testing of the power combiner and the four element phased array antenna. Test Circuit 1 enables measurement of the two-to-one power combiner. Test Circuit 2 enables measurement of the four-to-one power combiner. Test Circuit 3 enables measurement of a four element antenna array without phase shifting MMIC's in order to characterize the power combiner with the antenna patch-to-microstrip coaxial feedthroughs. Test circuit 4 is the four element phased array antenna including the RADC MMIC phase shifters and appropriate interconnects to provide bias voltages and control phase bits.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cela, Carlos Jose; Lazzi, Gianluca

The present embodiments are directed to implantable electrode arrays having virtual electrodes. The virtual electrodes may improve the resolution of the implantable electrode array without the burden of corresponding complexity of electronic circuitry and wiring. In a particular embodiment, a virtual electrode may include one or more passive elements to help steer current to a specific location between the active electrodes. For example, a passive element may be a metalized layer on a substrate that is adjacent to, but not directly connected to an active electrode. In certain embodiments, an active electrode may be directly coupled to a power sourcemore » via a conductive connection. Beneficially, the passive elements may help to increase the overall resolution of the implantable array by providing additional stimulation points without requiring additional wiring or driver circuitry for the passive elements.« less

Virtual electrodes for high-density electrode arrays

DOEpatents

Cela, Carlos J.; Lazzi, Gianluca

2015-10-13

The present embodiments are directed to implantable electrode arrays having virtual electrodes. The virtual electrodes may improve the resolution of the implantable electrode array without the burden of corresponding complexity of electronic circuitry and wiring. In a particular embodiment, a virtual electrode may include one or more passive elements to help steer current to a specific location between the active electrodes. For example, a passive element may be a metalized layer on a substrate that is adjacent to, but not directly connected to an active electrode. In certain embodiments, an active electrode may be directly coupled to a power source via a conductive connection. Beneficially, the passive elements may help to increase the overall resolution of the implantable array by providing additional stimulation points without requiring additional wiring or driver circuitry for the passive elements.

Protective carrier for microcircuit devices

DOEpatents

Robinson, Lyle A.

1976-10-26

An improved protective carrier for microcircuit devices having beam leads wherein a compressible member is disposed on the carrier base beneath and overlapping the periphery of an aperture in a flexible circuit element, the element being adapted to receive and make electrical contact with microcircuit device beam leads, the compressible member disposed or arranged to achieve flexing of the circuit element against the microcircuit device beam leads to conform to variations in thicknesses of the device beam leads or circuit element electrical paths and thereby insure electrical connection between the beam leads and the electrical paths.

BLOCKING OSCILLATOR DOUBLE PULSE GENERATOR CIRCUIT

DOEpatents

Haase, J.A.

1961-01-24

A double-pulse generator, particuiarly a double-pulse generator comprising a blocking oscillator utilizing a feedback circuit to provide means for producing a second pulse within the recovery time of the blocking oscillator, is described. The invention utilized a passive network which permits adjustment of the spacing between the original pulses derived from the blocking oscillator and further utilizes the original pulses to trigger a circuit from which other pulses are initiated. These other pulses are delayed and then applied to the input of the blocking oscillator, with the result that the output from the oscillator circuit contains twice the number of pulses originally initiated by the blocking oscillator itself.

High reduction of interfacial charge recombination in colloidal quantum dot solar cells by metal oxide surface passivation.

PubMed

Chang, Jin; Kuga, Yuki; Mora-Seró, Iván; Toyoda, Taro; Ogomi, Yuhei; Hayase, Shuzi; Bisquert, Juan; Shen, Qing

2015-03-12

Bulk heterojunction (BHJ) solar cells based on colloidal QDs and metal oxide nanowires (NWs) possess unique and outstanding advantages in enhancing light harvesting and charge collection in comparison to planar architectures. However, the high surface area of the NW structure often brings about a large amount of recombination (especially interfacial recombination) and limits the open-circuit voltage in BHJ solar cells. This problem is solved here by passivating the surface of the metal oxide component in PbS colloidal quantum dot solar cells (CQDSCs). By coating thin TiO2 layers onto ZnO-NW surfaces, the open-circuit voltage and power conversion efficiency have been improved by over 40% in PbS CQDSCs. Characterization by transient photovoltage decay and impedance spectroscopy indicated that the interfacial recombination was significantly reduced by the surface passivation strategy. An efficiency as high as 6.13% was achieved through the passivation approach and optimization for the length of the ZnO-NW arrays (device active area: 16 mm2). All solar cells were tested in air, and exhibited excellent air storage stability (without any performance decline over more than 130 days). This work highlights the significance of metal oxide passivation in achieving high performance BHJ solar cells. The charge recombination mechanism uncovered in this work could shed light on the further improvement of PbS CQDSCs and/or other types of solar cells.

Vibration attenuations induced by periodic arrays of piezoelectric patches connected by enhanced resonant shunting circuits

NASA Astrophysics Data System (ADS)

Wang, Gang; Wang, Jianwei; Chen, Shengbing; Wen, Jihong

2011-12-01

Periodic arrays of piezoelectric patches connected by enhanced resonant shunting circuits are attached to a slender beam to control the propagation of vibration. Numerical models based on the transfer matrix methodology are constructed to predict the band structure, attenuation factors and the transmission of vibration in the proposed smart structure. The vibration attenuations of the proposed smart structure and that with the passive resonant shunting circuits are compared in order to verify the efficiency of the enhanced resonant shunting circuits. Vibration experiments are conducted in order to validate the theoretical predictions. The specimen with a combination of different types of resonant shunting circuits is also studied in order to gain wider attenuation frequency ranges.

A Method for Growing Bio-memristors from Slime Mold.

PubMed

Miranda, Eduardo Reck; Braund, Edward

2017-11-02

Our research is aimed at gaining a better understanding of the electronic properties of organisms in order to engineer novel bioelectronic systems and computing architectures based on biology. This specific paper focuses on harnessing the unicellular slime mold Physarum polycephalum to develop bio-memristors (or biological memristors) and bio-computing devices. The memristor is a resistor that possesses memory. It is the 4th fundamental passive circuit element (the other three are the resistor, the capacitor, and the inductor), which is paving the way for the design of new kinds of computing systems; e.g., computers that might relinquish the distinction between storage and a central processing unit. When applied with an AC voltage, the current vs. voltage characteristic of a memristor is a pinched hysteresis loop. It has been shown that P. polycephalum produces pinched hysteresis loops under AC voltages and displays adaptive behavior that is comparable with the functioning of a memristor. This paper presents the method that we developed for implementing bio-memristors with P. polycephalum and introduces the development of a receptacle to culture the organism, which facilitates its deployment as an electronic circuit component. Our method has proven to decrease growth time, increase component lifespan, and standardize electrical observations.

A multiple degree of freedom electromechanical Helmholtz resonator.

PubMed

Liu, Fei; Horowitz, Stephen; Nishida, Toshikazu; Cattafesta, Louis; Sheplak, Mark

2007-07-01

The development of a tunable, multiple degree of freedom (MDOF) electromechanical Helmholtz resonator (EMHR) is presented. An EMHR consists of an orifice, backing cavity, and a compliant piezoelectric composite diaphragm. Electromechanical tuning of the acoustic impedance is achieved via passive electrical networks shunted across the piezoceramic. For resistive and capacitive loads, the EMHR is a 2DOF system possessing one acoustic and one mechanical DOF. When inductive ladder networks are employed, multiple electrical DOF are added. The dynamics of the multi-energy domain system are modeled using lumped elements and are represented in an equivalent electrical circuit, which is used to analyze the tunable acoustic input impedance of the EMHR. The two-microphone method is used to measure the acoustic impedance of two EMHR designs with a variety of resistive, capacitive, and inductive shunts. For the first design, the data demonstrate that the tuning range of the second resonant frequency for an EMHR with non-inductive shunts is limited by short- and open-circuit conditions, while an inductive shunt results in a 3DOF system possessing an enhanced tuning range. The second design achieves stronger coupling between the Helmholtz resonator and the piezoelectric backplate, and both resonant frequencies can be tuned with different non-inductive loads.

Analysis and synthesis of distributed-lumped-active networks by digital computer

NASA Technical Reports Server (NTRS)

1973-01-01

The use of digital computational techniques in the analysis and synthesis of DLA (distributed lumped active) networks is considered. This class of networks consists of three distinct types of elements, namely, distributed elements (modeled by partial differential equations), lumped elements (modeled by algebraic relations and ordinary differential equations), and active elements (modeled by algebraic relations). Such a characterization is applicable to a broad class of circuits, especially including those usually referred to as linear integrated circuits, since the fabrication techniques for such circuits readily produce elements which may be modeled as distributed, as well as the more conventional lumped and active ones.

Design of a front-end integrated circuit for 3D acoustic imaging using 2D CMUT arrays.

PubMed

Ciçek, Ihsan; Bozkurt, Ayhan; Karaman, Mustafa

2005-12-01

Integration of front-end electronics with 2D capacitive micromachined ultrasonic transducer (CMUT) arrays has been a challenging issue due to the small element size and large channel count. We present design and verification of a front-end drive-readout integrated circuit for 3D ultrasonic imaging using 2D CMUT arrays. The circuit cell dedicated to a single CMUT array element consists of a high-voltage pulser and a low-noise readout amplifier. To analyze the circuit cell together with the CMUT element, we developed an electrical CMUT model with parameters derived through finite element analysis, and performed both the pre- and postlayout verification. An experimental chip consisting of 4 X 4 array of the designed circuit cells, each cell occupying a 200 X 200 microm2 area, was formed for the initial test studies and scheduled for fabrication in 0.8 microm, 50 V CMOS technology. The designed circuit is suitable for integration with CMUT arrays through flip-chip bonding and the CMUT-on-CMOS process.

Influence of the transition region between p- and n-type polycrystalline silicon passivating contacts on the performance of interdigitated back contact silicon solar cells

NASA Astrophysics Data System (ADS)

Reichel, Christian; Müller, Ralph; Feldmann, Frank; Richter, Armin; Hermle, Martin; Glunz, Stefan W.

2017-11-01

Passivating contacts based on thin tunneling oxides (SiOx) and n- and p-type semi-crystalline or polycrystalline silicon (poly-Si) enable high passivation quality and low contact resistivity, but the integration of these p+/n emitter and n+/n back surface field junctions into interdigitated back contact silicon solar cells poses a challenge due to high recombination at the transition region from p-type to n-type poly-Si. Here, the transition region was created in different configurations—(a) p+ and n+ poly-Si regions are in direct contact with each other ("pn-junction"), using a local overcompensation (counterdoping) as a self-aligning process, (b) undoped (intrinsic) poly-Si remains between the p+ and n+ poly-Si regions ("pin-junction"), and (c) etched trenches separate the p+ and n+ poly-Si regions ("trench")—in order to investigate the recombination characteristics and the reverse breakdown behavior of these solar cells. Illumination- and injection-dependent quasi-steady state photoluminescence (suns-PL) and open-circuit voltage (suns-Voc) measurements revealed that non-ideal recombination in the space charge regions with high local ideality factors as well as recombination in shunted regions strongly limited the performance of solar cells without a trench. In contrast, solar cells with a trench allowed for open-circuit voltage (Voc) of 720 mV, fill factor of 79.6%, short-circuit current (Jsc) of 41.3 mA/cm2, and a conversion efficiencies (η) of 23.7%, showing that a lowly conducting and highly passivating intermediate layer between the p+ and n+ poly-Si regions is mandatory. Independent of the configuration, no hysteresis was observed upon multiple stresses in reverse direction, indicating a controlled and homogeneously distributed breakdown, but with different breakdown characteristics.

Dynamic analysis, circuit implementation and passive control of a novel four-dimensional chaotic system with multiscroll attractor and multiple coexisting attractors

NASA Astrophysics Data System (ADS)

Lai, Bang-Cheng; He, Jian-Jun

2018-03-01

In this paper, we construct a novel 4D autonomous chaotic system with four cross-product nonlinear terms and five equilibria. The multiple coexisting attractors and the multiscroll attractor of the system are numerically investigated. Research results show that the system has various types of multiple attractors, including three strange attractors with a limit cycle, three limit cycles, two strange attractors with a pair of limit cycles, two coexisting strange attractors. By using the passive control theory, a controller is designed for controlling the chaos of the system. Both analytical and numerical studies verify that the designed controller can suppress chaotic motion and stabilise the system at the origin. Moreover, an electronic circuit is presented for implementing the chaotic system.

Review of silicon photonics: history and recent advances

NASA Astrophysics Data System (ADS)

Ye, Winnie N.; Xiong, Yule

2013-09-01

Silicon photonics has attracted tremendous attention and research effort as a promising technology in optoelectronic integration for computing, communications, sensing, and solar harvesting. Mainly due to the combination of its excellent material properties and the complementary metal-oxide semiconductor (CMOS) fabrication processing technology, silicon has becoming the material choice for photonic and optoelectronic circuits with low cost, ultra-compact device footprint, and high-density integration. This review paper provides an overview on silicon photonics, by highlighting the early work from the mid-1980s on the fundamental building blocks such as silicon platforms and waveguides, and the main milestones that have been achieved so far in the field. A summary of reported work on functional elements in both passive and active devices, as well as the applications of the technology in interconnect, sensing, and solar cells, is identified.

Magnetic Field Response Measurement Acquisition System

NASA Technical Reports Server (NTRS)

Woodard, Stanley E. (Inventor); Taylor, Bryant D. (Inventor); Shams, Qamar A. (Inventor); Fox, Robert L. (Inventor); Fox, Christopher L. (Inventor); Fox, Melanie L. (Inventor); Bryant, Robert G. (Inventor)

2006-01-01

Magnetic field response sensors designed as passive inductor-capacitor circuits produce magnetic field responses whose harmonic frequencies correspond to states of physical properties for which the sensors measure. Power to the sensing element is acquired using Faraday induction. A radio frequency antenna produces the time varying magnetic field used for powering the sensor, as well as receiving the magnetic field response of the sensor. An interrogation architecture for discerning changes in sensor s response kequency, resistance and amplitude is integral to the method thus enabling a variety of measurements. Multiple sensors can be interrogated using this method, thus eliminating the need to have a data acquisition channel dedicated to each sensor. The method does not require the sensors to be in proximity to any form of acquisition hardware. A vast array of sensors can be used as interchangeable parts in an overall sensing system.

Development for application of parylene coatings. [to hybrid microcircuits devices

NASA Technical Reports Server (NTRS)

Oberin, F. W.

1974-01-01

A practical method of applying a parylene (paraxylene) coating to hybrid microcircuit devices was developed for the prevention of circuit malfunctions existing prior to package sealing or formed upon exposure to the service environment. It was found that paralene and an associated primer (if used) had generally little or no adverse effect on the active and passive elements of typical hybrid microcircuits. Exceptions were related to high frequency circuitry, low resistivity thick film resistors, and highly sensitive PIN diodes. Advantages of the use of the coating included increased dielectric strength and increased interconnection bond strength. Coating service life in nitrogen or nitrogen with low levels of oxygen as a contaminant is shown to be in excess of 1000 hours at 150 C and can be projected to be in excess of 5000 hours at 125 C.

Surface Characterization, Corrosion Resistance and in Vitro Biocompatibility of a New Ti-Hf-Mo-Sn Alloy

PubMed Central

Ion, Raluca; Drob, Silviu Iulian; Ijaz, Muhammad Farzik; Vasilescu, Cora; Osiceanu, Petre; Gordin, Doina-Margareta; Cimpean, Anisoara; Gloriant, Thierry

2016-01-01

A new superelastic Ti-23Hf-3Mo-4Sn biomedical alloy displaying a particularly large recovery strain was synthesized and characterized in this study. Its native passive film is very thick (18 nm) and contains very protective TiO2, Ti2O3, HfO2, MoO2, and SnO2 oxides (XPS analysis). This alloy revealed nobler electrochemical behavior, more favorable values of the corrosion parameters and open circuit potentials in simulated body fluid in comparison with commercially pure titanium (CP-Ti) and Ti-6Al-4V alloy taken as reference biomaterials in this study. This is due to the favorable influence of the alloying elements Hf, Sn, Mo, which enhance the protective properties of the native passive film on alloy surface. Impedance spectra showed a passive film with two layers, an inner, capacitive, barrier, dense layer and an outer, less insulating, porous layer that confer both high corrosion resistance and bioactivity to the alloy. In vitro tests were carried out in order to evaluate the response of Human Umbilical Vein Endothelial Cells (HUVECs) to Ti-23Hf-3Mo-4Sn alloy in terms of cell viability, cell proliferation, phenotypic marker expression and nitric oxide release. The results indicate a similar level of cytocompatibility with HUVEC cells cultured on Ti-23Hf-3Mo-4Sn substrate and those cultured on the conventional CP-Ti and Ti-6Al-4V metallic materials. PMID:28773939

Integrated circuit failure analysis by low-energy charge-induced voltage alteration

DOEpatents

Cole, E.I. Jr.

1996-06-04

A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs. 5 figs.

Integrated circuit failure analysis by low-energy charge-induced voltage alteration

DOEpatents

Cole, Jr., Edward I.

1996-01-01

A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs.

Passive front-ends for wideband millimeter wave electronic warfare

NASA Astrophysics Data System (ADS)

Jastram, Nathan Joseph

This thesis presents the analysis, design and measurements of novel passive front ends of interest to millimeter wave electronic warfare systems. However, emerging threats in the millimeter waves (18 GHz and above) has led to a push for new systems capable of addressing these threats. At these frequencies, traditional techniques of design and fabrication are challenging due to small size, limited bandwidth and losses. The use of surface micromachining technology for wideband direction finding with multiple element antenna arrays for electronic support is demonstrated. A wideband tapered slot antenna is first designed and measured as an array element for the subsequent arrays. Both 18--36 GHz and 75--110 GHz amplitude only and amplitude/phase two element direction finding front ends are designed and measured. The design of arrays using Butler matrix and Rotman lens beamformers for greater than two element direction finding over W band and beyond using is also presented. The design of a dual polarized high power capable front end for electronic attack over an 18--45 GHz band is presented. To combine two polarizations into the same radiating aperture, an orthomode transducer (OMT) based upon a new double ridge waveguide cross section is developed. To provide greater flexibility in needed performance characteristics, several different turnstile junction matching sections are tested. A modular horn section is proposed to address flexible and ever changing operational requirements, and is designed for performance criteria such as constant gain, beamwidth, etc. A multi-section branch guide coupler and low loss Rotman lens based upon the proposed cross section are also developed. Prototyping methods for the herein designed millimeter wave electronic warfare front ends are investigated. Specifically, both printed circuit board (PCB) prototyping of micromachined systems and 3D printing of conventionally machined horns are presented. A 4--8 GHz two element array with integrated beamformer fabricated using the stacking of PCB boards is shown, and measured results compare favorably with the micromachined front ends. A 3D printed small aperture horn is compared with a conventionally machined horn, and measured results show similar performance with a ten-fold reduction in cost and weight.

Antireflection and SiO2 Surface Passivation by Liquid-Phase Chemistry for Efficient Black Silicon Solar Cells: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuan, H. C.; Oh, J.; Zhang, Y.

2012-06-01

We report solar cells with both black Si antireflection and SiO2 surface passivation provided by inexpensive liquid-phase chemistry, rather than by conventional vacuum-based techniques. Preliminary cell efficiency has reached 16.4%. Nanoporous black Si antireflection on crystalline Si by aqueous etching promises low surface reflection for high photon utilization, together with lower manufacturing cost compared to vacuum-based antireflection coating. Ag-nanoparticle-assisted black Si etching and post-etching chemical treatment recently developed at NREL enables excellent control over the pore diameter and pore separation. Performance of black Si solar cells, including open-circuit voltage, short-circuit current density, and blue response, has benefited from these improvements.more » Prior to this study, our black Si solar cells were all passivated by thermal SiO2 produced in tube furnaces. Although this passivation is effective, it is not yet ideal for ultra-low-cost manufacturing. In this study, we report, for the first time, the integration of black Si with a proprietary liquid-phase deposition (LPD) passivation from Natcore Technology. The Natcore LPD forms a layer of <10-nm SiO2 on top of the black Si surface in a relatively mild chemical bath at room temperature. We demonstrate black Si solar cells with LPD SiO2 with a spectrum-weighted average reflection lower than 5%, similar to the more costly thermally grown SiO2 approach. However, LPD SiO2 provides somewhat better surface-passivation quality according to the lifetime analysis by the photo-conductivity decay measurement. Moreover, black Si solar cells with LPD SiO2 passivation exhibit higher spectral response at short wavelength compared to those passivated by thermally grown SiO2. With further optimization, the combination of aqueous black Si etching and LPD could provide a pathway for low-cost, high-efficiency crystalline Si solar cells.« less

The tapered slot antenna - A new integrated element for millimeter-wave applications

NASA Technical Reports Server (NTRS)

Yngvesson, K. Sigfrid; Kim, Young-Sik; Korzeniowski, T. L.; Kollberg, Erik L.; Johansson, Joakim F.

1989-01-01

Tapered slot antennas (TSAs) with a number of potential applications as single elements and focal-plane arrays are discussed. TSAs are fabricated with photolithographic techniques and integrated in either hybrid or MMIC circuits with receiver or transmitter components. They offer considerably narrower beams than other integrated antenna elements and have high aperture efficiency and packing density as array elements. Both the circuit and radiation properties of TSAs are reviewed. Topics covered include: antenna beamwidth, directivity, and gain of single-element TSAs; their beam shape and the effect of different taper shapes; and the input impedance and the effects of using thick dielectrics. These characteristics are also given for TSA arrays, as are the circuit properties of the array elements. Different array structures and their applications are also described.

Rectenna for high-voltage applications

NASA Technical Reports Server (NTRS)

Epp, Larry W. (Inventor); Khan, Abdur R. (Inventor)

2002-01-01

An energy transfer system is disclosed. The system includes patch elements, shielding layers, and energy rectifying circuits. The patch elements receive and couple radio frequency energy. The shielding layer includes at least one opening that allows radio frequency energy to pass through. The openings are formed and positioned to receive the radio frequency energy and to minimize any re-radiating back toward the source of energy. The energy rectifying circuit includes a circuit for rectifying the radio frequency energy into dc energy. A plurality of energy rectifying circuits is arranged in an array to provide a sum of dc energy generated by the energy rectifying circuit.

DIFFERENTIAL FAULT SENSING CIRCUIT

DOEpatents

Roberts, J.H.

1961-09-01

A differential fault sensing circuit is designed for detecting arcing in high-voltage vacuum tubes arranged in parallel. A circuit is provided which senses differences in voltages appearing between corresponding elements likely to fault. Sensitivity of the circuit is adjusted to some level above which arcing will cause detectable differences in voltage. For particular corresponding elements, a group of pulse transformers are connected in parallel with diodes connected across the secondaries thereof so that only voltage excursions are transmitted to a thyratron which is biased to the sensitivity level mentioned.

Hermetic Packages For Millimeter-Wave Circuits

NASA Technical Reports Server (NTRS)

Herman, Martin I.; Lee, Karen A.; Lowry, Lynn E.; Carpenter, Alain; Wamhof, Paul

1994-01-01

Advanced hermetic packages developed to house electronic circuits operating at frequencies from 1 to 100 gigahertz and beyond. Signals coupled into and out of packages electromagnetically. Provides circuit packages small, lightweight, rugged, and inexpensive in mass production. Packages embedded in planar microstrip and coplanar waveguide circuits, in waveguide-to-planar and planar-to-waveguide circuitry, in waveguide-to-waveguide circuitry, between radiating (antenna) elements, and between planar transmission lines and radiating elements. Other applications in automotive, communication, radar, remote sensing, and biomedical electronic systems foreseen.

High energy overcurrent protective device

DOEpatents

Praeg, Walter F.

1982-01-01

Electrical loads connected to capacitance elements in high voltage direct current systems are protected from damage by capacitance discharge overcurrents by connecting between the capacitance element and the load, a longitudinal inductor comprising a bifilar winding wound about a magnetic core, which forms an incomplete magnetic circuit. A diode is connected across a portion of the bifilar winding which conducts a unidirectional current only. Energy discharged from the capacitance element is stored in the inductor and then dissipated in an L-R circuit including the diode and the coil winding. Multiple high voltage circuits having capacitance elements may be connected to loads through bifilar windings all wound about the aforementioned magnetic core.

Center of mass detection via an active pixel sensor

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Minch, Brad (Inventor); Pain, Bedabrata (Inventor); Fossum, Eric (Inventor)

2005-01-01

An imaging system for identifying the location of the center of mass (COM) in an image. In one aspect, an imaging system includes a plurality of photosensitive elements arranged in a matrix. A center of mass circuit coupled to the photosensitive elements includes a resistive network and a normalization circuit including at least one bipolar transistor. The center of mass circuit identifies a center of mass location in the matrix and includes: a row circuit, where the row circuit identifies a center of mass row value in each row of the matrix and identifies a row intensity for each row; a horizontal circuit, where the horizontal circuit identifies a center of mass horizontal value; and a vertical circuit, where the vertical circuit identifies a center of mass vertical value. The horizontal and vertical center of mass values indicate the coordinates of the center of mass location for the image.

Center of mass detection via an active pixel sensor

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Minch, Brad (Inventor); Pain, Bedabrara (Inventor); Fossum, Eric (Inventor)

2006-01-01

An imaging system for identifying the location of the center of mass (COM) in an image. In one aspect, an imaging system includes a plurality of photosensitive elements arranged in a matrix. A center of mass circuit coupled to the photosensitive elements includes a resistive network and a normalization circuit including at least one bipolar transistor. The center of mass circuit identifies a center of mass location in the matrix and includes: a row circuit, where the row circuit identifies a center of mass row value in each row of the matrix and identifies a row intensity for each row; a horizontal circuit, where the horizontal circuit identifies a center of mass horizontal value; and a vertical circuit, where the vertical circuit identifies a center of mass vertical value. The horizontal and vertical center of mass values indicate the coordinates of the center of mass location for the image.

Center of mass detection via an active pixel sensor

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Minch, Brad (Inventor); Pain, Bedabrata (Inventor); Fossum, Eric (Inventor)

2002-01-01

An imaging system for identifying the location of the center of mass (COM) in an image. In one aspect, an imaging system includes a plurality of photosensitive elements arranged in a matrix. A center of mass circuit coupled to the photosensitive elements includes a resistive network and a normalization circuit including at least one bipolar transistor. The center of mass circuit identifies a center of mass location in the matrix and includes: a row circuit, where the row circuit identifies a center of mass row value in each row of the matrix and identifies a row intensity for each row; a horizontal circuit, where the horizontal circuit identifies a center of mass horizontal value; and a vertical circuit, where the vertical circuit identifies a center of mass vertical value. The horizontal and vertical center of mass values indicate the coordinates of the center of mass location for the image.

Dielectric behavior of beef meat in the 1-1500kHz range: Simulation with the Fricke/Cole-Cole model.

PubMed

Damez, Jean-Louis; Clerjon, Sylvie; Abouelkaram, Saïd; Lepetit, Jacques

2007-12-01

The electrical properties of biological tissues have been researched for many years. Impedance measurements observed with increasing frequencies are mainly attributed to changes in membrane conductivity and ion and charged-molecule mobility (mainly Na(+), K(+), CL(-) ions). Equivalent circuits with passive electrical components are frequently used as a support model for presentation and analyses of the behavior of tissues submitted to electrical fields. Fricke proposed an electrical model where the elements are resistive and capacitive. The model is composed of a resistive element (Rp) representing extracellular fluids (ECF) placed in parallel with a capacitive element (Cs) representing insulating membranes in series and a resistive element (Rs) representing intracellular fluids (ICF). This model is able to describe impedance measurements: at lower frequencies, most of the current flows around the cells without being able to penetrate them, while at higher frequencies the membranes lose their insulating properties and the current flows through both the extracellular and intracellular compartments. Since meat ageing induces structural change, particularly in membrane integrity, the insulating properties of membranes decrease, and intracellular and extracellular electrolytes mix, thus driving changes in their electrical properties. We report a method combining the Fricke and Cole-Cole models that was developed to monitor and explain tissues conductivity changes in preferential directions during beef meat ageing.

Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, Yuguo; Upadhyaya, Vijaykumar; Chen, Chia-Wei

This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iVoc of 714mV and saturation current density J0b of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids,more » this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers.« less

Series resonance inverter with triggered vacuum gaps

NASA Astrophysics Data System (ADS)

Damstra, Geert C.; Zhang, X.

1994-05-01

Series resonance inverters based on semi-conductor switching elements are well-known and have a wide range of application, mainly for lower voltages. For high voltage application many switching elements have to be put in series to obtain sufficient blocking voltage. Voltage grinding and multiple gate control elements are needed. There is much experience with the triggered vacuum gaps as high voltage/high current single shot elements, for example in reignition circuits for synthetic circuit breaker tests. These elements have a blocking voltage of 50 - 100 kV and are triggerable by a light fiber control device. A prototype inverter has been developed that generates 0.1 Hz, 30 kV AC voltages with a flat top for tests on cables and capacitors of many micro farads fed from a low voltage supply of about 600 V. Only two TVG elements are needed to switch the resonant circuit alternatively on the positive or negative supply. The resonant circuit itself consists of the capacitance of the testobject and a high quality inductor that determines the frequency and the peak current of the voltage reversing process.

A Review of International Space Station Habitable Element Equipment Offgassing Characteristics

NASA Technical Reports Server (NTRS)

Perry, Jay L.

2010-01-01

Crewed spacecraft trace contaminant control employs both passive and active methods to achieve acceptable cabin atmospheric quality. Passive methods include carefully selecting materials of construction, employing clean manufacturing practices, and minimizing systems and payload operational impacts to the cabin environment. Materials selection and manufacturing processes constitute the first level of equipment offgassing control. An element-level equipment offgassing test provides preflight verification that passive controls have been successful. Offgassing test results from multiple International Space Station (ISS) habitable elements and cargo vehicles are summarized and implications for active contamination control equipment design are discussed

Sequence information signal processor

DOEpatents

Peterson, John C.; Chow, Edward T.; Waterman, Michael S.; Hunkapillar, Timothy J.

1999-01-01

An electronic circuit is used to compare two sequences, such as genetic sequences, to determine which alignment of the sequences produces the greatest similarity. The circuit includes a linear array of series-connected processors, each of which stores a single element from one of the sequences and compares that element with each successive element in the other sequence. For each comparison, the processor generates a scoring parameter that indicates which segment ending at those two elements produces the greatest degree of similarity between the sequences. The processor uses the scoring parameter to generate a similar scoring parameter for a comparison between the stored element and the next successive element from the other sequence. The processor also delivers the scoring parameter to the next processor in the array for use in generating a similar scoring parameter for another pair of elements. The electronic circuit determines which processor and alignment of the sequences produce the scoring parameter with the highest value.

Simultaneous Ultrasound Therapy and Monitoring of Microbubble-Seeded Acoustic Cavitation Using a Single-Element Transducer.

PubMed

Heymans, Sophie V; Martindale, Christine F; Suler, Andrej; Pouliopoulos, Antonios N; Dickinson, Robert J; Choi, James J

2017-08-01

Ultrasound-driven microbubble (MB) activity is used in therapeutic applications such as blood clot dissolution and targeted drug delivery. The safety and performance of these technologies are linked to the type and distribution of MB activities produced within the targeted area, but controlling and monitoring these activities in vivo and in real time has proven to be difficult. As therapeutic pulses are often milliseconds long, MB monitoring currently requires a separate transducer used in a passive reception mode. Here, we present a simple, inexpensive, integrated setup, in which a focused single-element transducer can perform ultrasound therapy and monitoring simultaneously. MBs were made to flow through a vessel-mimicking tube, placed within the transducer's focus, and were sonicated with therapeutic pulses (peak rarefactional pressure: 75-827 kPa, pulse lengths: [Formula: see text] and 20 ms). The MB-seeded acoustic emissions were captured using the same transducer. The received signals were separated from the therapeutic signal with a hybrid coupler and a high-pass filter. We discriminated the MB-generated cavitation signal from the primary acoustic field and characterized MB behavior in real time. The simplicity and versatility of our circuit could make existing single-element therapeutic transducers also act as cavitation detectors, allowing the production of compact therapeutic systems with real time monitoring capabilities.

Initialization by measurement of a superconducting quantum bit circuit.

PubMed

Ristè, D; van Leeuwen, J G; Ku, H-S; Lehnert, K W; DiCarlo, L

2012-08-03

We demonstrate initialization by joint measurement of two transmon qubits in 3D circuit quantum electrodynamics. Homodyne detection of cavity transmission is enhanced by Josephson parametric amplification to discriminate the two-qubit ground state from single-qubit excitations nondestructively and with 98.1% fidelity. Measurement and postselection of a steady-state mixture with 4.7% residual excitation per qubit achieve 98.8% fidelity to the ground state, thus outperforming passive initialization.

Inexpensive system protects megawatt resistance-heating furnace against high-voltage surges

NASA Technical Reports Server (NTRS)

Stearns, E. J.

1971-01-01

Coolant gas extinguishes arcing across the break in a heater element. Air-gap shunt which bypasses high voltage impressed across the circuit prevents damage if the resistance elements break and open the inductive circuit.

Integrated coherent matter wave circuits

DOE PAGES

Ryu, C.; Boshier, M. G.

2015-09-21

An integrated coherent matter wave circuit is a single device, analogous to an integrated optical circuit, in which coherent de Broglie waves are created and then launched into waveguides where they can be switched, divided, recombined, and detected as they propagate. Applications of such circuits include guided atom interferometers, atomtronic circuits, and precisely controlled delivery of atoms. We report experiments demonstrating integrated circuits for guided coherent matter waves. The circuit elements are created with the painted potential technique, a form of time-averaged optical dipole potential in which a rapidly moving, tightly focused laser beam exerts forces on atoms through theirmore » electric polarizability. Moreover, the source of coherent matter waves is a Bose–Einstein condensate (BEC). Finally, we launch BECs into painted waveguides that guide them around bends and form switches, phase coherent beamsplitters, and closed circuits. These are the basic elements that are needed to engineer arbitrarily complex matter wave circuitry.« less

Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component

NASA Technical Reports Server (NTRS)

Barron, Andrew R. (Inventor); Hepp, Aloysius F. (Inventor); Jenkins, Phillip P. (Inventor); MacInnes, Andrew N. (Inventor)

1999-01-01

A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

Evaluation of Non-Chromate Passivations on Electroplated gamma-Phase Zinc Nickel

NASA Astrophysics Data System (ADS)

Volz, Steven Michael

This research focused on the corrosion response and electrochemical behavior of electroplated low hydrogen embrittlement alkaline gamma-phase zinc nickel with passivation layers. The motivation was the need to replace hexavalent chromium conversion coatings in military grade electrical systems with a more environment friendly alternative. The passivation layers were employed for the purpose of mitigating corrosion attack while maintaining low contact resistance. Trivalent chromium-based passivations and cerium-based passivations were compared against the currently used hexavalent chromium conversion coating. The coating systems were compared using electrochemical impedance spectroscopy, cyclic potentiodymanic scans, salt spray exposure testing, electrical resistance measurements, microstructure analysis, and compositional analysis. Coating systems with lower open circuit had a lower corrosion current and performed better during salt spray testing. All of the systems evaluated had corrosion products consistent with oxidized zinc compounds but the morphology of the passivation was dependent on the passivation. The electrical contact resistance ranged from 1 to 108 mO/cm 2, after salt spray testing. Two versions of Trivalent chromium-based passivations, were able to meet military performance specifications after corrosion testing.

I(CES)-cubes: a modular self-reconfigurable bipartite robotic system

NASA Astrophysics Data System (ADS)

Unsal, Cem; Kiliccote, Han; Khosla, Pradeep K.

1999-08-01

In this manuscript, we introduce I(CES)-Cubes, a class of 3D modular robotic system that is capable of reconfiguring itself in order to adapt to its environment. This is a bipartite system, i.e. a collection of (i) active elements capable of actuation, and (ii) passive elements acting as connectors between actuated elements. Active elements, called links, are 3-DOF manipulators that are capable of attaching/detaching themselves to/from the passive elements. The cubes can then be positioned and oriented using links, which are independent mechatronic elements. Self- reconfiguration property enables the system to performed locomotion tasks over difficult terrain. For example, the system would be capable of moving over obstacles and climbing stairs. These task are performed by positing and orienting cubes and links to form a 3D network with required shape and position. This paper describes the design of the passive and active elements, the attachment mechanics, and several reconfiguration scenarios. Specifics of the hardware implementation and result of experiments with current prototypes are also given.

Magnetic Field Response Measurement Acquisition System

NASA Technical Reports Server (NTRS)

Woodward, Stanley E. (Inventor); Taylor, Bryant D. (Inventor)

2007-01-01

Magnetic field response sensors designed as passive inductor- capacit or circuits produce magnetic field responses whose harmonic frequenci es correspond to states of physical properties for which the sensors measure. Power to the sensing element is acquired using Faraday induc tion. A radio frequency antenna produces the time varying magnetic fi eld used for powering the sensor, as well as receiving the magnetic field response of the sensor. An interrogation architecture for disce rning changes in sensor's response frequency, resistance and amplitud e is integral to the method thus enabling a variety of measurements. Multiple sensors can be interrogated using this method, thus eliminat ing the need to have a data acquisition channel dedicated to each se nsor. The method does not require the sensors to be in proximity to a ny form of acquisition hardware. A vast array of sensors can be used as interchangeable parts in an overall sensing system.

Presynaptic learning and memory with a persistent firing neuron and a habituating synapse: a model of short term persistent habituation.

PubMed

Ramanathan, Kiruthika; Ning, Ning; Dhanasekar, Dhiviya; Li, Guoqi; Shi, Luping; Vadakkepat, Prahlad

2012-08-01

Our paper explores the interaction of persistent firing axonal and presynaptic processes in the generation of short term memory for habituation. We first propose a model of a sensory neuron whose axon is able to switch between passive conduction and persistent firing states, thereby triggering short term retention to the stimulus. Then we propose a model of a habituating synapse and explore all nine of the behavioral characteristics of short term habituation in a two neuron circuit. We couple the persistent firing neuron to the habituation synapse and investigate the behavior of short term retention of habituating response. Simulations show that, depending on the amount of synaptic resources, persistent firing either results in continued habituation or maintains the response, both leading to longer recovery times. The effectiveness of the model as an element in a bio-inspired memory system is discussed.

Hybrid Damping System for an Electronic Equipment Mounting Shelf

NASA Technical Reports Server (NTRS)

Voracek, David; Kolkailah, Faysal A.; Cavalli, J. R.; Elghandour, Eltahry

1997-01-01

The objective of this study was to design and construct a vibration control system for an electronic equipment shelf to be evaluated in the NASA Dryden FTF-II. The vibration control system was a hybrid system which included passive and active damping techniques. Passive damping was fabricated into the equipment shelf using ScothDamp(trademark) damping film and aluminum constraining layers. Active damping was achieved using a two channel active control circuit employing QuickPack(trademark) sensors and actuators. Preliminary Chirp test results indicated passive damping smoothed the frequency response while active damping reduced amplitudes of the frequency response for most frequencies below 500Hz.

Hybrid Damping System for an Electronic Equipment Mounting Shelf

NASA Technical Reports Server (NTRS)

Voracek, David; Kolkailah, Faysal A.; Cavalli, J. R.; Elghandour, Eltahry

1997-01-01

The objective of this study was to design and construct a vibration control system for an electronic equipment shelf to be evaluated in the NASA Dryden FTF-11. The vibration control system was a hybrid system which included passive and active damping techniques. Passive damping was fabricated into the equipment shelf using ScothDamp(trademark) damping film and aluminum constraining layers. Active damping was achieved using a two channel active control circuit employing QuickPack(trademark) sensors and actuators. Preliminary Chirp test results indicated passive damping smoothed the frequency response while active damping reduced amplitudes of the frequency response for most frequencies below 500Hz.

Noise characteristics of passive components for phased array applications

NASA Technical Reports Server (NTRS)

Sonmez, M. Kemal; Trew, Robert J.

1991-01-01

The results of a comparative study on noise characteristics of basic power combining/dividing and phase shifting schemes are presented. The theoretical basics of thermal noise in a passive linear multiport are discussed. A new formalism is presented to describe the noise behavior of the passive circuits, and it is shown that the fundamental results are conveniently achieved using this description. The results of analyses concerning the noise behavior of basic power combining/dividing structures (the Wilkinson combiner, 90 deg hybrid coupler, hybrid ring coupler, and the Lange coupler) are presented. Three types of PIN-diode switch phase shifters are analyzed in terms of noise performance.

A Method for Growing Bio-memristors from Slime Mold

PubMed Central

Miranda, Eduardo Reck; Braund, Edward

2017-01-01

Our research is aimed at gaining a better understanding of the electronic properties of organisms in order to engineer novel bioelectronic systems and computing architectures based on biology. This specific paper focuses on harnessing the unicellular slime mold Physarum polycephalum to develop bio-memristors (or biological memristors) and bio-computing devices. The memristor is a resistor that possesses memory. It is the 4th fundamental passive circuit element (the other three are the resistor, the capacitor, and the inductor), which is paving the way for the design of new kinds of computing systems; e.g., computers that might relinquish the distinction between storage and a central processing unit. When applied with an AC voltage, the current vs. voltage characteristic of a memristor is a pinched hysteresis loop. It has been shown that P. polycephalum produces pinched hysteresis loops under AC voltages and displays adaptive behavior that is comparable with the functioning of a memristor. This paper presents the method that we developed for implementing bio-memristors with P. polycephalum and introduces the development of a receptacle to culture the organism, which facilitates its deployment as an electronic circuit component. Our method has proven to decrease growth time, increase component lifespan, and standardize electrical observations. PMID:29155754

Nonlinear Wave Chaos and the Random Coupling Model

NASA Astrophysics Data System (ADS)

Zhou, Min; Ott, Edward; Antonsen, Thomas M.; Anlage, Steven

The Random Coupling Model (RCM) has been shown to successfully predict the statistical properties of linear wave chaotic cavities in the highly over-moded regime. It is of interest to extend the RCM to strongly nonlinear systems. To introduce nonlinearity, an active nonlinear circuit is connected to two ports of the wave chaotic 1/4-bowtie cavity. The active nonlinear circuit consists of a frequency multiplier, an amplifier and several passive filters. It acts to double the input frequency in the range from 3.5 GHz to 5 GHz, and operates for microwaves going in only one direction. Measurements are taken between two additional ports of the cavity and we measure the statistics of the second harmonic voltage over an ensemble of realizations of the scattering system. We developed an RCM-based model of this system as two chaotic cavities coupled by means of a nonlinear transfer function. The harmonics received at the output are predicted to be the product of three statistical quantities that describe the three elements correspondingly. Statistical results from simulation, RCM-based modeling, and direct experimental measurements will be compared. ONR under Grant No. N000141512134, AFOSR under COE Grant FA9550-15-1-0171,0 and the Maryland Center for Nanophysics and Advanced Materials.

An Improved Zero Potential Circuit for Readout of a Two-Dimensional Resistive Sensor Array.

PubMed

Wu, Jian-Feng; Wang, Feng; Wang, Qi; Li, Jian-Qing; Song, Ai-Guo

2016-12-06

With one operational amplifier (op-amp) in negative feedback, the traditional zero potential circuit could access one element in the two-dimensional (2-D) resistive sensor array with the shared row-column fashion but it suffered from the crosstalk problem for the non-scanned elements' bypass currents, which were injected into array's non-scanned electrodes from zero potential. Firstly, for suppressing the crosstalk problem, we designed a novel improved zero potential circuit with one more op-amp in negative feedback to sample the total bypass current and calculate the precision resistance of the element being tested (EBT) with it. The improved setting non-scanned-electrode zero potential circuit (S-NSE-ZPC) was given as an example for analyzing and verifying the performance of the improved zero potential circuit. Secondly, in the S-NSE-ZPC and the improved S-NSE-ZPC, the effects of different parameters of the resistive sensor arrays and their readout circuits on the EBT's measurement accuracy were simulated with the NI Multisim 12. Thirdly, part features of the improved circuit were verified with the experiments of a prototype circuit. Followed, the results were discussed and the conclusions were given. The experiment results show that the improved circuit, though it requires one more op-amp, one more resistor and one more sampling channel, can access the EBT in the 2-D resistive sensor array more accurately.

The corrosion behavior of technetium metal exposed to aqueous sulfate and chloride solutions

DOE PAGES

Kolman, David Gary; Goff, George Scott; Cisneros, Michael Ruben; ...

2017-04-19

Here, metal waste forms are being studied as possible disposal forms for technetium and other fission products from spent nuclear fuel. As an initial step in assessing the viability of waste forms, technetium corrosion and passivity behavior was assessed across a broad pH spectrum (pH –1 to pH 13). Measurements indicate that the open circuit potential falls into the region of Tc +7 stability, more noble than the region of presumed passivity. Potentiodynamic polarization tests indicate that the Tc samples are not passive. Both electrochemical results and visual inspection suggest the presence of a nonprotective film. The corrosion rate ismore » relatively independent of pH and low, as measured by linear polarization resistance. No evidence of passivity was observed in the Tc +4 region of the potential-pH diagram following in-situ abrasion, suggesting that Tc does not passivate, regardless of potential.« less

The corrosion behavior of technetium metal exposed to aqueous sulfate and chloride solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kolman, David Gary; Goff, George Scott; Cisneros, Michael Ruben

Here, metal waste forms are being studied as possible disposal forms for technetium and other fission products from spent nuclear fuel. As an initial step in assessing the viability of waste forms, technetium corrosion and passivity behavior was assessed across a broad pH spectrum (pH –1 to pH 13). Measurements indicate that the open circuit potential falls into the region of Tc +7 stability, more noble than the region of presumed passivity. Potentiodynamic polarization tests indicate that the Tc samples are not passive. Both electrochemical results and visual inspection suggest the presence of a nonprotective film. The corrosion rate ismore » relatively independent of pH and low, as measured by linear polarization resistance. No evidence of passivity was observed in the Tc +4 region of the potential-pH diagram following in-situ abrasion, suggesting that Tc does not passivate, regardless of potential.« less

Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

DOE PAGES

Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; ...

2015-03-02

Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devicesmore » with high Voc values at 25°C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.« less

Dynamic Training Elements in a Circuit Theory Course to Implement a Self-Directed Learning Process

ERIC Educational Resources Information Center

Krouk, B. I.; Zhuravleva, O. B.

2009-01-01

This paper reports on the implementation of a self-directed learning process in a circuit theory course, incorporating dynamic training elements which were designed on the basis of a cybernetic model of cognitive process management. These elements are centrally linked in a dynamic learning frame, created on the monitor screen, which displays the…

Active-passive corrosion of iron-chromium-nickel alloys in hot concentrated sulphuric acid solutions

NASA Astrophysics Data System (ADS)

Kish, Joseph R.

1999-11-01

In the manufacture of sulphuric acid more stringent environmental standards and operation economics have forced the industry to improve product utilization, energy efficiency and reliability. A key to improving both the thermal efficiency and reliability is the use and/or development of more corrosion resistance materials including stainless steels, especially in the parts of the plant that handle the condensed acid. Application of more corrosion resistant material requires a better understanding of the corrosion mechanism involved in concentrated H2SO4-H2O (>90 wt.%) solutions. While corrosion kinetics of carbon steel, the traditional material of construction, are relatively well understood, this is much less true in the case of the cyclic active-passive corrosion of stainless steels. Models proposed to explain the cyclic active-passive corrosion involve a periodic formation of either a protective metal sulphate film or an insoluble sulphur layer. To better understand the reactivity and/or passivity of stainless steel in concentrated H2SO4-H2O solutions a study employing immersion and electrochemical techniques, including rotating electrodes, was conducted in order to clarify the following: (1) The state of stainless steel passivity. (2) The conditions in which passivity is stable. (3) The role played by the major alloying elements in establishing and maintaining the passive state. The study involved evaluating the corrosion behaviour of stainless steels S30403 and S43000 along with iron, chromium and nickel in 93.5 wt.% H2SO4 at temperatures between 25--80°C. Major discoveries of the study include: (1) A content of 17--18 wt.% chromium is sufficient to anodically passivate S43000 as the potential is made more noble. Passivity is not stable and requires anodic polarization. (2) Alloyed nickel plays an active role in improving the corrosion resistance of stainless steel. A content of 8 wt.% nickel is sufficient promote a periodic passivation of the base Fe-(17--18)wt.% Cr stainless steel under open-circuit conditions which reduces the corrosion rate by at least an order of magnitude. (3) The electrolysis of concentrated H2SO4-H 2O solutions involves a potential-dependent reduction of H2SO 4 molecules to sulphur-containing species with an oxidation state lower than six (6). The various reduction products have a significant effect on the stainless steel corrosion resistance. (4) Successful modelling of the corrosion of nickel has been accomplished by using a galvanic interaction between a noncontinuous nickel sulphide (NiS) deposit, formed in situ, and the uncovered nickel metal. (5) Successful modelling of the active-passive corrosion of S30403 has been accomplished using a galvanic interaction between NiS(Ni) and S43000.

The Passive Film Growth Mechanism of New Corrosion-Resistant Steel Rebar in Simulated Concrete Pore Solution: Nanometer Structure and Electrochemical Study

PubMed Central

Jiang, Jin-yang; Wang, Danqian; Chu, Hong-yan; Ma, Han; Liu, Yao; Gao, Yun; Shi, Jinjie; Sun, Wei

2017-01-01

An elaborative study was carried out on the growth mechanism and properties of the passive film for a new kind of alloyed corrosion-resistant steel (CR steel). The passive film naturally formed in simulated concrete pore solutions (pH = 13.3). The corrosion resistance was evaluated by various methods including open circuit potential (OCP), linear polarization resistance (LPR) measurements, and electrochemical impedance spectroscopy (EIS). Meanwhile, the 2205 duplex stainless steel (SS steel) was evaluated for comparison. Moreover, the passive film with CR steel was studied by means of X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Atomic Force Microscope (AFM), and the Mott‑Schottky approach. The results showed that the excellent passivity of CR steel could be detected in a high alkaline environment. The grain boundaries between the fine passive film particles lead to increasing Cr oxide content in the later passivation stage. The filling of cation vacancies in the later passivation stage as well as the orderly crystalized inner layer contributed to the excellent corrosion resistance of CR steel. A passive film growth model for CR steel was proposed. PMID:28772772

The Passive Film Growth Mechanism of New Corrosion-Resistant Steel Rebar in Simulated Concrete Pore Solution: Nanometer Structure and Electrochemical Study.

PubMed

Jiang, Jin-Yang; Wang, Danqian; Chu, Hong-Yan; Ma, Han; Liu, Yao; Gao, Yun; Shi, Jinjie; Sun, Wei

2017-04-14

An elaborative study was carried out on the growth mechanism and properties of the passive film for a new kind of alloyed corrosion-resistant steel (CR steel). The passive film naturally formed in simulated concrete pore solutions (pH = 13.3). The corrosion resistance was evaluated by various methods including open circuit potential (OCP), linear polarization resistance (LPR) measurements, and electrochemical impedance spectroscopy (EIS). Meanwhile, the 2205 duplex stainless steel (SS steel) was evaluated for comparison. Moreover, the passive film with CR steel was studied by means of X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Atomic Force Microscope (AFM), and the Mott‑Schottky approach. The results showed that the excellent passivity of CR steel could be detected in a high alkaline environment. The grain boundaries between the fine passive film particles lead to increasing Cr oxide content in the later passivation stage. The filling of cation vacancies in the later passivation stage as well as the orderly crystalized inner layer contributed to the excellent corrosion resistance of CR steel. A passive film growth model for CR steel was proposed.

Impedance matched, high-power, rf antenna for ion cyclotron resonance heating of a plasma

DOEpatents

Baity, Jr., Frederick W.; Hoffman, Daniel J.; Owens, Thomas L.

1988-01-01

A resonant double loop radio frequency (rf) antenna for radiating high-power rf energy into a magnetically confined plasma. An inductive element in the form of a large current strap, forming the radiating element, is connected between two variable capacitors to form a resonant circuit. A real input impedance results from tapping into the resonant circuit along the inductive element, generally near the midpoint thereof. The impedance can be matched to the source impedance by adjusting the separate capacitors for a given tap arrangement or by keeping the two capacitances fixed and adjustng the tap position. This results in a substantial reduction in the voltage and current in the transmission system to the antenna compared to unmatched antennas. Because the complete circuit loop consisting of the two capacitors and the inductive element is resonant, current flows in the same direction along the entire length of the radiating element and is approximately equal in each branch of the circuit. Unidirectional current flow permits excitation of low order poloidal modes which penetrate more deeply into the plasma.

Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

NASA Astrophysics Data System (ADS)

Cui, Xiao; Zhang, Can; Liang, Song; Zhu, Hong-Liang; Hou, Lian-Ping

2014-04-01

Impurity-free intermixing of InGaAsP multiple quantum wells (MQW) using sputtering Cu/SiO2 layers followed by rapid thermal processing (RTP) is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, photodetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172 nm is realized with an annealing condition of 750°C and 200s. The improved technique is promising for the fabrication of the active/passive optoelectronic components on a single wafer with simple process and low cost.

Long-term storage of nickel-hydrogen cells

NASA Technical Reports Server (NTRS)

Vaidyanathan, Hari

1987-01-01

Representative samples of nickel hydrogen cells for the INTELSAT program were used to evaluate the effects of prolonged storage under passive conditions such as open circuit discharged at 0 C, room temperature, and -20 C, and under quasidynamic conditions such as top-off charge and trickle charge. Cell capacity declines when cells are stored open-circuit discharged at room temperature, and a second plateau occurs in the discharge curve. Capacity loss was 47 percent for a cell with hydrogen precharge and 24.5 percent for one with no hydrogen precharge. Capacity recovery was observed following top-off charge storage of cells which had exhibited faded capacity as a result of passive storage at room temperature. Cells stored either at -20 C or on trickle charge maintained their capacity. At 0 C storage, the capacity of all three cells under tests was greater than 55 Ah (which exceeds the required minimum of 44 Ah) after 7 months.

Micro and nano devices in passive millimetre wave imaging systems

NASA Astrophysics Data System (ADS)

Appleby, R.

2013-06-01

The impact of micro and nano technology on millimetre wave imaging from the post war years to the present day is reviewed. In the 1950s whisker contacted diodes in mixers and vacuum tubes were used to realise both radiometers and radars but required considerable skill to realise the performance needed. Development of planar semiconductor devices such as Gunn and Schottky diodes revolutionised mixer performance and provided considerable improvement. The next major breakthrough was high frequency transistors based on gallium arsenide which were initially used at intermediate frequencies but later after further development at millimeter wave frequencies. More recently Monolithic Microwave Integrated circuits(MMICs) offer exceptional performance and the opportunity for innovative design in passive imaging systems. In the future the use of micro and nano technology will continue to drive system performance and we can expect to see integration of antennae, millimetre wave and sub millimetre wave circuits and signal processing.

A Passive EMI Filter with Access to the Ungrounded Motor Neutral Line-Its Effect on Eliminating Leakage Current from the Inverter Heat Sink-

NASA Astrophysics Data System (ADS)

Doumoto, Takafumi; Akagi, Hirofumi

This paper deals with a leakage current flowing out of the heat sink of a voltage-source PWM inverter. The heat-sink leakage current is caused by a steep change in the common-mode voltage produced by the inverter. It flows through parasitic capacitors between the heat sink and power semiconductor devices when no EMI filter is connected. Experimental results reveal that the heat-sink leakage current flows not into the supply side, but into the motor side. These understandings succeed in describing an equivalent common-mode circuit taking the parasitic capacitors into account. The authors have proposed a passive EMI filter that is unique in access to the ungrounded motor neutral line. It is discussed from this equivalent circuit that the passive EMI filter is effective in preventing the leakage current from flowing. Moreover, installation of another small-sized common-mode inductor at the ac side of the diode rectifier prevents the leakage current from flowing into the supply side. Experimental results obtained from a 200-V, 3.7-kW laboratory system confirm the effectiveness and viability of the EMI filter.

Athermal and wavelength-trimmable photonic filters based on TiO₂-cladded amorphous-SOI.

PubMed

Lipka, Timo; Moldenhauer, Lennart; Müller, Jörg; Trieu, Hoc Khiem

2015-07-27

Large-scale integrated silicon photonic circuits suffer from two inevitable issues that boost the overall power consumption. First, fabrication imperfections even on sub-nm scale result in spectral device non-uniformity that require fine-tuning during device operation. Second, the photonic devices need to be actively corrected to compensate thermal drifts. As a result significant amount of power is wasted if no athermal and wavelength-trimmable solutions are utilized. Consequently, in order to minimize the total power requirement of photonic circuits in a passive way, trimming methods are required to correct the device inhomogeneities from manufacturing and athermal solutions are essential to oppose temperature fluctuations of the passive/active components during run-time. We present an approach to fabricate CMOS backend-compatible and athermal passive photonic filters that can be corrected for fabrication inhomogeneities by UV-trimming based on low-loss amorphous-SOI waveguides with TiO2 cladding. The trimming of highly confined 10 μm ring resonators is proven over a free spectral range retaining athermal operation. The athermal functionality of 2nd-order 5 μm add/drop microrings is demonstrated over 40°C covering a broad wavelength interval of 60 nm.

Improved PEDOT:PSS/c-Si hybrid solar cell using inverted structure and effective passivation

PubMed Central

Zhang, Xisheng; Yang, Dong; Yang, Zhou; Guo, Xiaojia; Liu, Bin; Ren, Xiaodong; Liu, Shengzhong (Frank)

2016-01-01

The PEDOT:PSS is often used as the window layer in the normal structured PEDOT:PSS/c-Si hybrid solar cell (HSC), leading to significantly reduced response, especially in red and near-infrared region. By depositing the PEDOT:PSS on the rear side of the c-Si wafer, we developed an inverted structured HSC with much higher solar cell response in the red and near-infrared spectrum. Passivating the other side with hydrogenated amorphous silicon (a-Si:H) before electrode deposition, the minority carrier lifetime has been significantly increased and the power conversion efficiency (PCE) of the inverted HSC is improved to as high as 16.1% with an open-circuit voltage (Voc) of 634 mV, fill factor (FF) of 70.5%, and short-circuit current density (Jsc) of 36.2 mA cm−2, an improvement of 33% over the control device. The improvements are ascribed to inverted configuration and a-Si:H passivation, which can increase photon carrier generation and reduce carrier recombination, respectively. Both of them will benefit the photovoltaic performance and should be considered as effective design strategies to improve the performance of organic/c-Si HSCs. PMID:27725714

A novel FPGA-programmable switch matrix interconnection element in quantum-dot cellular automata

NASA Astrophysics Data System (ADS)

Hashemi, Sara; Rahimi Azghadi, Mostafa; Zakerolhosseini, Ali; Navi, Keivan

2015-04-01

The Quantum-dot cellular automata (QCA) is a novel nanotechnology, promising extra low-power, extremely dense and very high-speed structure for the construction of logical circuits at a nanoscale. In this paper, initially previous works on QCA-based FPGA's routing elements are investigated, and then an efficient, symmetric and reliable QCA programmable switch matrix (PSM) interconnection element is introduced. This element has a simple structure and offers a complete routing capability. It is implemented using a bottom-up design approach that starts from a dense and high-speed 2:1 multiplexer and utilise it to build the target PSM interconnection element. In this study, simulations of the proposed circuits are carried out using QCAdesigner, a layout and simulation tool for QCA circuits. The results demonstrate high efficiency of the proposed designs in QCA-based FPGA routing.

Programmable resistive-switch nanowire transistor logic circuits.

PubMed

Shim, Wooyoung; Yao, Jun; Lieber, Charles M

2014-09-10

Programmable logic arrays (PLA) constitute a promising architecture for developing increasingly complex and functional circuits through nanocomputers from nanoscale building blocks. Here we report a novel one-dimensional PLA element that incorporates resistive switch gate structures on a semiconductor nanowire and show that multiple elements can be integrated to realize functional PLAs. In our PLA element, the gate coupling to the nanowire transistor can be modulated by the memory state of the resistive switch to yield programmable active (transistor) or inactive (resistor) states within a well-defined logic window. Multiple PLA nanowire elements were integrated and programmed to yield a working 2-to-4 demultiplexer with long-term retention. The well-defined, controllable logic window and long-term retention of our new one-dimensional PLA element provide a promising route for building increasingly complex circuits with nanoscale building blocks.

Magnetophoretic circuits for digital control of single particles and cells

NASA Astrophysics Data System (ADS)

Lim, Byeonghwa; Reddy, Venu; Hu, Xinghao; Kim, Kunwoo; Jadhav, Mital; Abedini-Nassab, Roozbeh; Noh, Young-Woock; Lim, Yong Taik; Yellen, Benjamin B.; Kim, Cheolgi

2014-05-01

The ability to manipulate small fluid droplets, colloidal particles and single cells with the precision and parallelization of modern-day computer hardware has profound applications for biochemical detection, gene sequencing, chemical synthesis and highly parallel analysis of single cells. Drawing inspiration from general circuit theory and magnetic bubble technology, here we demonstrate a class of integrated circuits for executing sequential and parallel, timed operations on an ensemble of single particles and cells. The integrated circuits are constructed from lithographically defined, overlaid patterns of magnetic film and current lines. The magnetic patterns passively control particles similar to electrical conductors, diodes and capacitors. The current lines actively switch particles between different tracks similar to gated electrical transistors. When combined into arrays and driven by a rotating magnetic field clock, these integrated circuits have general multiplexing properties and enable the precise control of magnetizable objects.

Printed circuit board impedance matching step for microwave (millimeter wave) devices

DOEpatents

Pao, Hsueh-Yuan; Aguirre, Jerardo; Sargis, Paul

2013-10-01

An impedance matching ground plane step, in conjunction with a quarter wave transformer section, in a printed circuit board provides a broadband microwave matching transition from board connectors or other elements that require thin substrates to thick substrate (>quarter wavelength) broadband microwave (millimeter wave) devices. A method of constructing microwave and other high frequency electrical circuits on a substrate of uniform thickness, where the circuit is formed of a plurality of interconnected elements of different impedances that individually require substrates of different thicknesses, by providing a substrate of uniform thickness that is a composite or multilayered substrate; and forming a pattern of intermediate ground planes or impedance matching steps interconnected by vias located under various parts of the circuit where components of different impedances are located so that each part of the circuit has a ground plane substrate thickness that is optimum while the entire circuit is formed on a substrate of uniform thickness.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryu, C.; Boshier, M. G.

An integrated coherent matter wave circuit is a single device, analogous to an integrated optical circuit, in which coherent de Broglie waves are created and then launched into waveguides where they can be switched, divided, recombined, and detected as they propagate. Applications of such circuits include guided atom interferometers, atomtronic circuits, and precisely controlled delivery of atoms. We report experiments demonstrating integrated circuits for guided coherent matter waves. The circuit elements are created with the painted potential technique, a form of time-averaged optical dipole potential in which a rapidly moving, tightly focused laser beam exerts forces on atoms through theirmore » electric polarizability. Moreover, the source of coherent matter waves is a Bose–Einstein condensate (BEC). Finally, we launch BECs into painted waveguides that guide them around bends and form switches, phase coherent beamsplitters, and closed circuits. These are the basic elements that are needed to engineer arbitrarily complex matter wave circuitry.« less

Design principles and realization of electro-optical circuit boards

NASA Astrophysics Data System (ADS)

Betschon, Felix; Lamprecht, Tobias; Halter, Markus; Beyer, Stefan; Peterson, Harry

2013-02-01

The manufacturing of electro-optical circuit boards (EOCB) is based to a large extent on established technologies. First products with embedded polymer waveguides are currently produced in series. The range of applications within the sensor and data communication markets is growing with the increasing maturity level. EOCBs require design flows, processes and techniques similar to existing printed circuit board (PCB) manufacturing and appropriate for optical signal transmission. A key aspect is the precise and automated assembly of active and passive optical components to the optical waveguides which has to be supported by the technology. The design flow is described after a short introduction into the build-up of EOCBs and the motivation for the usage of this technology within the different application fields. Basis for the design of EOCBs are the required optical signal transmission properties. Thereafter, the devices for the electro-optical conversion are chosen and the optical coupling approach is defined. Then, the planar optical elements (waveguides, splitters, couplers) are designed and simulated. This phase already requires co-design of the optical and electrical domain using novel design flows. The actual integration of an optical system into a PCB is shown in the last part. The optical layer is thereby laminated to the purely electrical PCB using a conventional PCB-lamination process to form the EOCB. The precise alignment of the various electrical and optical layers is thereby essential. Electrical vias are then generated, penetrating also the optical layer, to connect the individual electrical layers. Finally, the board has to be tested electrically and optically.

Evaluation of a combination of continuum and truss finite elements in a model of passive and active muscle tissue.

PubMed

Hedenstierna, S; Halldin, P; Brolin, K

2008-12-01

The numerical method of finite elements (FE) is a powerful tool for analysing stresses and strains in the human body. One area of increasing interest is the skeletal musculature. This study evaluated modelling of skeletal muscle tissue using a combination of passive non-linear, viscoelastic solid elements and active Hill-type truss elements, the super-positioned muscle finite element (SMFE). The performance of the combined materials and elements was evaluated for eccentric motions by simulating a tensile experiment from a published study on a stimulated rabbit muscle including three different strain rates. It was also evaluated for isometric and concentric contractions. The resulting stress-strain curves had the same overall pattern as the experiments, with the main limitation being sensitivity to the active force-length relation. It was concluded that the SMFE could model active and passive muscle tissue at constant rate elongations for strains below failure, as well as isometric and concentric contractions.

The ringer - An efficient, high repetition rate circuit for electromagnetic launchers

NASA Astrophysics Data System (ADS)

Giorgi, D.; Helava, H.; Lindner, K.; Long, J.; Zucker, O.

1989-01-01

The Meatgrinder is an efficient, current-multiplying circuit which can be used to optimize the energy transfer to various electromagnetic gun configurations. The authors present a simple variant of the Meatgrinder circuit which permits a first-order current profiling into the gun and recovery of the inductive energy in the barrel at a high repetition rate. The circuit is basically a one-stage Meatgrinder which utilizes the ringing of the energy storage capacitor (less than 40 percent reversal) to perform the opening switch function and a solid-state diode as the crowbar switch between the two mutually coupled inductors. With resonant charging, this results in a completely passive, high-repetiton-rate electromagnetic-gun power supply. Since most of the barrel energy is recovered, a railgun with negligible muzzle flash can be realized.

Nano-solenoid: helicoid carbon-boron nitride hetero-nanotube

NASA Astrophysics Data System (ADS)

Zhang, Zi-Yue; Miao, Chunyang; Guo, Wanlin

2013-11-01

As a fundamental element of a nanoscale passive circuit, a nano-inductor is proposed based on a hetero-nanotube consisting of a spiral carbon strip and a spiral boron nitride strip. It is shown by density functional theory associated with nonequilibrium Green function calculations that the nanotube exhibits attractive transport properties tunable by tube chirality, diameter, component proportion and connection manner between the two strips, with excellent `OFF' state performance and high current on the order of 10-100 μA. All the hetero-nanotubes show negative differential resistance. The transmission peaks of current are absolutely derived from the helicoid carbon strips or C-BN boundaries, giving rise to a spiral current analogous with an energized nano-solenoid. According to Ampere's Law, the energized nano-solenoid can generate a uniform and tremendous magnetic field of more than 1 tesla, closing to that generated by the main magnet of medical nuclear magnetic resonance. Moreover, the magnitude of magnetic field can be easily modulated by bias voltage, providing great promise for a nano-inductor to realize electromagnetic conversion at the nanoscale.As a fundamental element of a nanoscale passive circuit, a nano-inductor is proposed based on a hetero-nanotube consisting of a spiral carbon strip and a spiral boron nitride strip. It is shown by density functional theory associated with nonequilibrium Green function calculations that the nanotube exhibits attractive transport properties tunable by tube chirality, diameter, component proportion and connection manner between the two strips, with excellent `OFF' state performance and high current on the order of 10-100 μA. All the hetero-nanotubes show negative differential resistance. The transmission peaks of current are absolutely derived from the helicoid carbon strips or C-BN boundaries, giving rise to a spiral current analogous with an energized nano-solenoid. According to Ampere's Law, the energized nano-solenoid can generate a uniform and tremendous magnetic field of more than 1 tesla, closing to that generated by the main magnet of medical nuclear magnetic resonance. Moreover, the magnitude of magnetic field can be easily modulated by bias voltage, providing great promise for a nano-inductor to realize electromagnetic conversion at the nanoscale. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr02914j

Computer-Aided Design of Low-Noise Microwave Circuits

NASA Astrophysics Data System (ADS)

Wedge, Scott William

1991-02-01

Devoid of most natural and manmade noise, microwave frequencies have detection sensitivities limited by internally generated receiver noise. Low-noise amplifiers are therefore critical components in radio astronomical antennas, communications links, radar systems, and even home satellite dishes. A general technique to accurately predict the noise performance of microwave circuits has been lacking. Current noise analysis methods have been limited to specific circuit topologies or neglect correlation, a strong effect in microwave devices. Presented here are generalized methods, developed for computer-aided design implementation, for the analysis of linear noisy microwave circuits comprised of arbitrarily interconnected components. Included are descriptions of efficient algorithms for the simultaneous analysis of noisy and deterministic circuit parameters based on a wave variable approach. The methods are therefore particularly suited to microwave and millimeter-wave circuits. Noise contributions from lossy passive components and active components with electronic noise are considered. Also presented is a new technique for the measurement of device noise characteristics that offers several advantages over current measurement methods.

Equivalent Circuit Parameter Calculation of Interior Permanent Magnet Motor Involving Iron Loss Resistance Using Finite Element Method

NASA Astrophysics Data System (ADS)

Yamazaki, Katsumi

In this paper, we propose a method to calculate the equivalent circuit parameters of interior permanent magnet motors including iron loss resistance using the finite element method. First, the finite element analysis considering harmonics and magnetic saturation is carried out to obtain time variations of magnetic fields in the stator and the rotor core. Second, the iron losses of the stator and the rotor are calculated from the results of the finite element analysis with the considerations of harmonic eddy current losses and the minor hysteresis losses of the core. As a result, we obtain the equivalent circuit parameters i.e. the d-q axis inductance and the iron loss resistance as functions of operating condition of the motor. The proposed method is applied to an interior permanent magnet motor to calculate the characteristics based on the equivalent circuit obtained by the proposed method. The calculated results are compared with the experimental results to verify the accuracy.

Maximum and minimum return losses from a passive two-port network terminated with a mismatched load

NASA Technical Reports Server (NTRS)

Otoshi, T. Y.

1993-01-01

This article presents an analytical method for determining the exact distance a load is required to be offset from a passive two-port network to obtain maximum or minimum return losses from the terminated two-port network. Equations are derived in terms of two-port network S-parameters and load reflection coefficient. The equations are useful for predicting worst-case performances of some types of networks that are terminated with offset short-circuit loads.

Atomically thin transition metal layers: Atomic layer stabilization and metal-semiconductor transition

NASA Astrophysics Data System (ADS)

Hwang, Jeongwoon; Oh, Young Jun; Kim, Jiyoung; Sung, Myung Mo; Cho, Kyeongjae

2018-04-01

We have performed first-principle calculations to explore the possibility of synthesizing atomically thin transition metal (TM) layers. Buckled structures as well as planar structures of elemental 2D TM layers result in significantly higher formation energies compared with sp-bonded elemental 2D materials with similar structures, such as silicene and phosphorene. It is shown that the TM layers can be stabilized by surface passivation with HS, C6H5S2, or O, and O passivation is most effective. The surface oxygen passivation can improve stability leading to thermodynamically stable TM monolayers except Au, which is the most non-reactive metal element. Such stabilized TM monolayers also show an electronic structure transition from metallic state of free-standing TM layer to semiconducting O-passivated Mo and W monolayers with band gaps of 0.20-1.38 eV.

Photonic Integrated Circuits

NASA Technical Reports Server (NTRS)

Krainak, Michael; Merritt, Scott

2016-01-01

Integrated photonics generally is the integration of multiple lithographically defined photonic and electronic components and devices (e.g. lasers, detectors, waveguides passive structures, modulators, electronic control and optical interconnects) on a single platform with nanometer-scale feature sizes. The development of photonic integrated circuits permits size, weight, power and cost reductions for spacecraft microprocessors, optical communication, processor buses, advanced data processing, and integrated optic science instrument optical systems, subsystems and components. This is particularly critical for small spacecraft platforms. We will give an overview of some NASA applications for integrated photonics.

Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

DTIC Science & Technology

2016-01-20

Figure 7 4×4 GMAPD array wire bonded to CMOS timing circuits Figure 8 Low‐fill‐factor APD design used in lidar sensors The APD doping...epitaxial growth and the pixels are isolated by mesa etch. 128×32 lidar image sensors were built by bump bonding the APD arrays to a CMOS timing...passive image sensor with this large a format based on hybridization of a GMAPD array to a CMOS readout. Fig. 14 shows one of the first images taken

A Hybrid Converter for Improving Light Load Efficiency

NASA Astrophysics Data System (ADS)

Takahashi, Masaya; Nishijima, Kimihiro; Nagao, Michihiko; Sato, Terukazu; Nabeshima, Takashi

In order to reduce power consumption of electronic equipment in stand-by mode, idle-mode and sleep-mode, a simple efficiency improvement technique for switching regulator in light load region is proposed. In this technique, under the light load, the small switching elements in a MOSFET driver circuit are used instead of the switching elements in a main regulator circuit to reduce driving losses. Of course, under the load heavier than light load, the MOSFET driver drives the switching elements in the main regulator circuit. The efficiency of a 2.5V/5A prototype buck converter is improved from 47.1% to 72.7% by using the proposed technique.

Submicrosecond Power-Switching Test Circuit

NASA Technical Reports Server (NTRS)

Folk, Eric N.

2006-01-01

A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a repetitive waveform from a signal generator, momentary closure of a push-button switch, or closure or opening of a manually operated on/off switch. In the case of a signal generator, one can adjust the frequency and duty cycle as needed to obtain the desired AC power-supply response, which one could display on an oscilloscope. Momentary switch closure could be useful for obtaining (and, if desired, displaying on an oscilloscope set to trigger on an event) the response of a power supply to a single load transient. The on/off switch can be used to switch between load states in which static-load regulation measurements are performed.

On the application of a new thermal diagnostic model: the passive elements equivalent in term of ventilation inside a room

NASA Astrophysics Data System (ADS)

El Khattabi, El Mehdi; Mharzi, Mohamed; Raefat, Saad; Meghari, Zouhair

2018-05-01

In this paper, the thermal equivalence of the passive elements of a room in a building located in Fez-Morocco has been studied. The possibility of replacing them with a semi-passive element such as ventilation has been appraised. For this aim a Software in Fortran taking into account the meteorological external conditions along with different parameters of the building envelope has been performed. A new computational approach is adapted to determinate the temperature distribution throughout the building multilayer walls. A novel equation gathering the internal temperature with the external conditions, and the building envelope has been deduced in transient state.

Cassette for handling banknotes or the like

DOEpatents

Lundblad, Leif

1981-08-11

A cassette for banknotes and like valuable articles is provided with a displaceable lid (6) and locking means (10) for latching the lid of the cassette when the cassette is located outside a housing (25) in which it is intended to be placed. An operating means (8) is arranged to co-act with the locking means and with a latching element (15). The latching element is arranged to be released in dependence upon a pre-set program. A signal circuit is arranged to send a code signal to a detector circuit (23) when electrical contact elements on the cassette and the housing co-act with one another, which detector circuit, when the signal coincides with the signal program in the detector circuit, causes a signal to be sent for moving the latching means to a non-latching position.

Modular assembly of optical nanocircuits.

PubMed

Shi, Jinwei; Monticone, Francesco; Elias, Sarah; Wu, Yanwen; Ratchford, Daniel; Li, Xiaoqin; Alù, Andrea

2014-05-29

A key element enabling the microelectronic technology advances of the past decades has been the conceptualization of complex circuits with versatile functionalities as being composed of the proper combination of basic 'lumped' circuit elements (for example, inductors and capacitors). In contrast, modern nanophotonic systems are still far from a similar level of sophistication, partially because of the lack of modularization of their response in terms of basic building blocks. Here we demonstrate the design, assembly and characterization of relatively complex photonic nanocircuits by accurately positioning a number of metallic and dielectric nanoparticles acting as modular lumped elements. The nanoparticle clusters produce the desired spectral response described by simple circuit rules and are shown to be dynamically reconfigurable by modifying the direction or polarization of impinging signals. Our work represents an important step towards extending the powerful modular design tools of electronic circuits into nanophotonic systems.

Modular assembly of optical nanocircuits

NASA Astrophysics Data System (ADS)

Shi, Jinwei; Monticone, Francesco; Elias, Sarah; Wu, Yanwen; Ratchford, Daniel; Li, Xiaoqin; Alù, Andrea

2014-05-01

A key element enabling the microelectronic technology advances of the past decades has been the conceptualization of complex circuits with versatile functionalities as being composed of the proper combination of basic ‘lumped’ circuit elements (for example, inductors and capacitors). In contrast, modern nanophotonic systems are still far from a similar level of sophistication, partially because of the lack of modularization of their response in terms of basic building blocks. Here we demonstrate the design, assembly and characterization of relatively complex photonic nanocircuits by accurately positioning a number of metallic and dielectric nanoparticles acting as modular lumped elements. The nanoparticle clusters produce the desired spectral response described by simple circuit rules and are shown to be dynamically reconfigurable by modifying the direction or polarization of impinging signals. Our work represents an important step towards extending the powerful modular design tools of electronic circuits into nanophotonic systems.

Design Considerations for Gun Propellant Climatic Storage Chambers.

DTIC Science & Technology

1982-11-01

Schematic diagram of thermal element 5 4. Prototype Lhermal element 6 5. Power control circuit diagram 7 6. Power control module 7 7. Temperature...plates. Each plate is powered through a triac and temperature control circuit as shown in figure 5. Figure 6 is a photograph of an assembled power control...SHEATER PLATES Figure 5. Power control circuit diagram 4 f Figure 6. Power control module WSR.L-0295-TR -8- Figure 7. Temperature control module 9 -WSRL

Elements configuration of the open lead test circuit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fukuzaki, Yumi, E-mail: 14514@sr.kagawa-nct.ac.jp; Ono, Akira

In the field of electronics, small electronic devices are widely utilized because they are easy to carry. The devices have various functions by user’s request. Therefore, the lead’s pitch or the ball’s pitch have been narrowed and high-density printed circuit board has been used in the devices. Use of the ICs which have narrow lead pitch makes normal connection difficult. When logic circuits in the devices are fabricated with the state-of-the-art technology, some faults have occurred more frequently. It can be divided into types of open faults and short faults. We have proposed a new test method using a testmore » circuit in the past. This paper propose elements configuration of the test circuit.« less

Fabrication process for polymer PLC platforms with V-grooves for passive alignment

NASA Astrophysics Data System (ADS)

Park, Suntak; Lee, Jong-Moo; Ahn, Joon Tae; Baek, Yong-Soon

2005-12-01

A method for polymer planar lightwave circuit (PLC) devices fabricated on a substrate with V-grooves is developed for passive alignment of an optical fiber to a polymer waveguide. In order to minimize thickness nonuniformity of polymer layers caused by the V-grooves, dry film resist (DFR) is used. The V-grooves are covered with the DFR before the polymer layers are spin-coated on the substrate. The DFR prevents the polymer from being filled in the V-grooves as well as from being spin-coated nonuniformly on the substrate. This process provides a simple and cost-effective fabrication method of polymer PLCs or platforms for passive alignment.

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

PubMed

Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

2018-05-02

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

Proposal of leak path passivation for InGaN solar cells to reduce the leakage current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ke, E-mail: ke.wang@chiba-u.jp; Imai, Daichi; Kusakabe, Kazuhide

2016-01-25

We propose some general ways to passivate the leak paths in InGaN solar cells and report some experimental evidences of its effectiveness. By adopting an AlOx passivation process, the photovoltaic performances of GaN pn-junctions and InGaN solar cells, grown by molecular beam epitaxy, have been significantly improved. The open circuit voltage under 1 sun illumination increases from 1.46 to 2.26 V for a GaN pn junction, and from 0.95 to 1.27 V for an InGaN solar cell, demonstrating evidence of leak path passivation (LPP) by AlOx. The proposed LPP is expected to be a realistic way to exploit the potential of thickmore » and relaxed but defective InGaN for solar cell applications.« less

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

NASA Technical Reports Server (NTRS)

Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

2004-01-01

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Temperature differential detection device

DOEpatents

Girling, P.M.

1986-04-22

A temperature differential detection device for detecting the temperature differential between predetermined portions of a container wall is disclosed as comprising a Wheatstone bridge circuit for detecting resistance imbalance with a first circuit branch having a first elongated wire element mounted in thermal contact with a predetermined portion of the container wall, a second circuit branch having a second elongated wire element mounted in thermal contact with a second predetermined portion of a container wall with the wire elements having a predetermined temperature-resistant coefficient, an indicator interconnected between the first and second branches remote from the container wall for detecting and indicating resistance imbalance between the first and second wire elements, and connector leads for electrically connecting the wire elements to the remote indicator in order to maintain the respective resistance value relationship between the first and second wire elements. The indicator is calibrated to indicate the detected resistance imbalance in terms of a temperature differential between the first and second wall portions. 2 figs.

Temperature differential detection device

DOEpatents

Girling, Peter M.

1986-01-01

A temperature differential detection device for detecting the temperature differential between predetermined portions of a container wall is disclosed as comprising a Wheatstone bridge circuit for detecting resistance imbalance with a first circuit branch having a first elongated wire element mounted in thermal contact with a predetermined portion of the container wall, a second circuit branch having a second elongated wire element mounted in thermal contact with a second predetermined portion of a container wall with the wire elements having a predetermined temperature-resistant coefficient, an indicator interconnected between the first and second branches remote from the container wall for detecting and indicating resistance imbalance between the first and second wire elements, and connector leads for electrically connecting the wire elements to the remote indicator in order to maintain the respective resistance value relationship between the first and second wire elements. The indicator is calibrated to indicate the detected resistance imbalance in terms of a temperature differential between the first and second wall portions.

Non-Foster Circuits for High Performance Antennas: Advantages and Practical Limitations

NASA Astrophysics Data System (ADS)

Jacob, Minu Mariam

The demand for miniaturized, broadband communication systems has created a need for electrically small, broadband antennas. However, all passive electrically small antennas have a fundamental gain-bandwidth limitation related to their electrical size, as first described by Wheeler and Chu. This limitation can be overcome using active non-Foster circuits (negative inductors and/or negative capacitors), which can deliver a broadband input match with active matching techniques, or can help reduce phase dispersion using negative delay effects. This thesis will illustrate the advantages of non-Foster circuits in obtaining broadband small antennas, in addition to examining their practical limitations due to noise in receive applications, and nonlinearity in transmit applications.

Apparatus including a plurality of spaced transformers for locating short circuits in cables

NASA Technical Reports Server (NTRS)

Cason, R. L.; Mcstay, J. J. (Inventor)

1978-01-01

A cable fault locator is described for sensing faults such as short circuits in power cables. The apparatus includes a plurality of current transformers strategically located along a cable. Trigger circuits are connected to each of the current transformers for placing a resistor in series with a resistive element responsive to an abnormally high current flowing through that portion of the cable. By measuring the voltage drop across the resistive element, the location of the fault can be determined.

Negative inductance circuits for metamaterial bandwidth enhancement

NASA Astrophysics Data System (ADS)

Avignon-Meseldzija, Emilie; Lepetit, Thomas; Ferreira, Pietro Maris; Boust, Fabrice

2017-12-01

Passive metamaterials have yet to be translated into applications on a large scale due in large part to their limited bandwidth. To overcome this limitation many authors have suggested coupling metamaterials to non-Foster circuits. However, up to now, the number of convincing demonstrations based on non-Foster metamaterials has been very limited. This paper intends to clarify why progress has been so slow, i.e., the fundamental difficulty in making a truly broadband and efficient non-Foster metamaterial. To this end, we consider two families of metamaterials, namely Artificial Magnetic Media and Artificial Magnetic Conductors. In both cases, it turns out that bandwidth enhancement requires negative inductance with almost zero resistance. To estimate bandwidth enhancement with actual non-Foster circuits, we consider two classes of such circuits, namely Linvill and gyrator. The issue of stability being critical, both metamaterial families are studied with equivalent circuits that include advanced models of these non-Foster circuits. Conclusions are different for Artificial Magnetic Media coupled to Linvill circuits and Artificial Magnetic Conductors coupled to gyrator circuits. In the first case, requirements for bandwidth enhancement and stability are very hard to meet simultaneously whereas, in the second case, an adjustment of the transistor gain does significantly increase bandwidth.

Solution processed integrated pixel element for an imaging device

NASA Astrophysics Data System (ADS)

Swathi, K.; Narayan, K. S.

2016-09-01

We demonstrate the implementation of a solid state circuit/structure comprising of a high performing polymer field effect transistor (PFET) utilizing an oxide layer in conjunction with a self-assembled monolayer (SAM) as the dielectric and a bulk-heterostructure based organic photodiode as a CMOS-like pixel element for an imaging sensor. Practical usage of functional organic photon detectors requires on chip components for image capture and signal transfer as in the CMOS/CCD architecture rather than simple photodiode arrays in order to increase speed and sensitivity of the sensor. The availability of high performing PFETs with low operating voltage and photodiodes with high sensitivity provides the necessary prerequisite to implement a CMOS type image sensing device structure based on organic electronic devices. Solution processing routes in organic electronics offers relatively facile procedures to integrate these components, combined with unique features of large-area, form factor and multiple optical attributes. We utilize the inherent property of a binary mixture in a blend to phase-separate vertically and create a graded junction for effective photocurrent response. The implemented design enables photocharge generation along with on chip charge to voltage conversion with performance parameters comparable to traditional counterparts. Charge integration analysis for the passive pixel element using 2D TCAD simulations is also presented to evaluate the different processes that take place in the monolithic structure.

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

NASA Technical Reports Server (NTRS)

Chen, Liang-yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

2016-01-01

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

Optical fiber-fault surveillance for passive optical networks in S-band operation window

NASA Astrophysics Data System (ADS)

Yeh, Chien-Hung; Chi, Sien

2005-07-01

An S-band (1470 to 1520 nm) fiber laser scheme, which uses multiple fiber Bragg grating (FBG) elements as feedback elements on each passive branch, is proposed and described for in-service fault identification in passive optical networks (PONs). By tuning a wavelength selective filter located within the laser cavity over a gain bandwidth, the fiber-fault of each branch can be monitored without affecting the in-service channels. In our experiment, an S-band four-branch monitoring tree-structured PON system is demonstrated and investigated experimentally.

Optical fiber-fault surveillance for passive optical networks in S-band operation window.

PubMed

Yeh, Chien-Hung; Chi, Sien

2005-07-11

An S-band (1470 to 1520 nm) fiber laser scheme, which uses multiple fiber Bragg grating (FBG) elements as feedback elements on each passive branch, is proposed and described for in-service fault identification in passive optical networks (PONs). By tuning a wavelength selective filter located within the laser cavity over a gain bandwidth, the fiber-fault of each branch can be monitored without affecting the in-service channels. In our experiment, an S-band four-branch monitoring tree-structured PON system is demonstrated and investigated experimentally.

Multiscale modelling of a composite electroactive polymer structure

NASA Astrophysics Data System (ADS)

Wang, P.; Lassen, B.; Jones, R. W.; Thomsen, B.

2010-12-01

Danfoss PolyPower has developed a tubular actuator comprising a dielectric elastomer sheet with specially shaped compliant electrodes rolled into a tube. This paper is concerned with the modelling of this kind of tubular actuator. This is a challenging task due to the system's multiscale nature which is caused by the orders of magnitude difference between the length and thickness of the sheets as well as the thickness of the electrodes and the elastomer in the sheets. A further complication is the presence of passive parts at both ends of the actuator, i.e. areas without electrodes which are needed in order to avoid short circuits between negative and positively charged electrodes on the two sides of the sheet. Due to the complexities in shape and size it is necessary to introduce some simplifying assumptions. This paper presents a set of models where the three-dimensional problem has been reduced to two-dimensional problems, ensuring that the resulting models can be handled numerically within the framework of the finite element method. These models have been derived by expressing Navier's equation in elliptical cylindrical coordinates in order to take full advantage of the special shape of these actuators. Emphasis is placed on studying the passive parts of the actuator, as these degrade the effectiveness of the actuator. Two approaches are used here to model the passive parts: a spring-stiffness analogy model and a longitudinal section model of the actuator. The models have been compared with experimental results for the force-elongation characteristics of the commercially available PolyPower 'InLastor push' actuator. The comparison shows good agreement between model and experiments for the case where the passive parts were taken into account. One of the models developed is subsequently used to study geometric effects—specifically the effect of changing the ellipticity of the tubular actuator on the actuator's performance is investigated.

Investigation of the use of microwave image line integrated circuits for use in radiometers and other microwave devices in X-band and above

NASA Technical Reports Server (NTRS)

Knox, R. M.; Toulios, P. P.; Onoda, G. Y.

1972-01-01

Program results are described in which the use of a/high permittivity rectangular dielectric image waveguide has been investigated for use in microwave and millimeter wavelength circuits. Launchers from rectangular metal waveguide to image waveguide are described. Theoretical and experimental evaluations of the radiation from curved image waveguides are given. Measurements of attenuation due to conductor and dielectric losses, adhesives, and gaps between the dielectric waveguide and the image plane are included. Various passive components are described and evaluations given. Investigations of various techniques for fabrication of image waveguide circuits using ceramic waveguides are also presented. Program results support the evaluation of the image line approach as an advantageous method for realizing low loss integrated electronic circuits for X-band and above.

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.

PubMed

Yan, Xiao; Zhang, David Wei; Liu, Chunsen; Bao, Wenzhong; Wang, Shuiyuan; Ding, Shijin; Zheng, Gengfeng; Zhou, Peng

2018-04-01

2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field-effect transistors. However, 2DLM-based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS 2 /GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM-based integrated circuits based on amplifier circuits.

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures

PubMed Central

Yan, Xiao; Zhang, David Wei; Liu, Chunsen; Bao, Wenzhong; Wang, Shuiyuan; Ding, Shijin; Zheng, Gengfeng

2018-01-01

Abstract 2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field‐effect transistors. However, 2DLM‐based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS2/GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM‐based integrated circuits based on amplifier circuits. PMID:29721428

A Simple Memristor Model for Circuit Simulations

NASA Astrophysics Data System (ADS)

Fullerton, Farrah-Amoy; Joe, Aaleyah; Gergel-Hackett, Nadine; Department of Chemistry; Physics Team

This work describes the development of a model for the memristor, a novel nanoelectronic technology. The model was designed to replicate the real-world electrical characteristics of previously fabricated memristor devices, but was constructed with basic circuit elements using a free widely available circuit simulator, LT Spice. The modeled memrsistors were then used to construct a circuit that performs material implication. Material implication is a digital logic that can be used to perform all of the same basic functions as traditional CMOS gates, but with fewer nanoelectronic devices. This memristor-based digital logic could enable memristors' use in new paradigms of computer architecture with advantages in size, speed, and power over traditional computing circuits. Additionally, the ability to model the real-world electrical characteristics of memristors in a free circuit simulator using its standard library of elements could enable not only the development of memristor material implication, but also the development of a virtually unlimited array of other memristor-based circuits.

Normal modes of a superconducting transmission-line resonator with embedded lumped element circuit components

NASA Astrophysics Data System (ADS)

Mortensen, Henrik Lund; Mølmer, Klaus; Andersen, Christian Kraglund

2016-11-01

We present a method to identify the coupled, normal modes of a superconducting transmission line with an embedded lumped element circuit. We evaluate the effective transmission-line nonlinearities in the case of Kerr-like Josephson interactions in the circuit and in the case where the embedded circuit constitutes a qubit degree of freedom, which is Rabi coupled to the field in the transmission line. Our theory quantitatively accounts for the very high and positive Kerr nonlinearities observed in a recent experiment [M. Rehák, P. Neilinger, M. Grajcar, G. Oelsner, U. Hübner, E. Il'ichev, and H.-G. Meyer, Appl. Phys. Lett. 104, 162604 (2014), 10.1063/1.4873719], and we can evaluate the accomplishments of modified versions of the experimental circuit.

Development and application of an information-analytic system on the problem of flow accelerated corrosion of pipeline elements in the secondary coolant circuit of VVER-440-based power units at the Novovoronezh nuclear power plant

NASA Astrophysics Data System (ADS)

Tomarov, G. V.; Povarov, V. P.; Shipkov, A. A.; Gromov, A. F.; Kiselev, A. N.; Shepelev, S. V.; Galanin, A. V.

2015-02-01

Specific features relating to development of the information-analytical system on the problem of flow-accelerated corrosion of pipeline elements in the secondary coolant circuit of the VVER-440-based power units at the Novovoronezh nuclear power plant are considered. The results from a statistical analysis of data on the quantity, location, and operating conditions of the elements and preinserted segments of pipelines used in the condensate-feedwater and wet steam paths are presented. The principles of preparing and using the information-analytical system for determining the lifetime to reaching inadmissible wall thinning in elements of pipelines used in the secondary coolant circuit of the VVER-440-based power units at the Novovoronezh NPP are considered.

Equivalent circuit parameters of nickel/metal hydride batteries from sparse impedance measurements

NASA Astrophysics Data System (ADS)

Nelatury, Sudarshan Rao; Singh, Pritpal

In a recent communication, a method for extracting the equivalent circuit parameters of a lead acid battery from sparse (only three) impedance spectroscopy observations at three different frequencies was proposed. It was based on an equivalent circuit consisting of a bulk resistance, a reaction resistance and a constant phase element (CPE). Such a circuit is a very appropriate model of a lead-acid cell at high state of charge (SOC). This paper is a sequel to it and presents an application of it in case of nickel/metal hydride (Ni/MH) batteries, which also at high SOC are represented by the same circuit configuration. But when the SOC of a Ni/MH battery under interrogation goes low, The EIS curve has a positive slope at the low frequency end and our technique yields complex values for the otherwise real circuit parameters, suggesting the need for additional elements in the equivalent circuit and a definite relationship between parameter consistency and SOC. To improvise the previous algorithm, in order that it works reasonably well at both high and low SOCs, we propose three more measurements—two at very low frequencies to include the Warburg response and one at a high frequency to model the series inductance, in addition to the three in the mid frequency band—totally six measurements. In most of the today's instrumentation, it is the user who should choose the circuit configuration and the number of frequencies where impedance should be measured and the accompanying software performs data fitting by complex nonlinear least squares. The proposed method has built into it an SOC-based decision-making capability—both to choose the circuit configuration and to estimate the values of the circuit elements.

Sputter-Deposited Oxides for Interface Passivation of CdTe Photovoltaics

DOE PAGES

Kephart, Jason M.; Kindvall, Anna; Williams, Desiree; ...

2018-01-18

Commercial CdTe PV modules have polycrystalline thin films deposited on glass, and devices made in this format have exceeded 22% efficiency. Devices made by the authors with a magnesium zinc oxide window layer and tellurium back contact have achieved efficiency over 18%, but these cells still suffer from an open-circuit voltage far below ideal values. Oxide passivation layers made by sputter deposition have the potential to increase voltage by reducing interface recombination. CdTe devices with these passivation layers were studied with photoluminescence (PL) emission spectroscopy and time-resolved photoluminescence (TRPL) to detect an increase in minority carrier lifetime. Because these oxidemore » materials exhibit barriers to carrier collection, micropatterning was used to expose small point contacts while still allowing interface passivation. TRPL decay lifetimes have been greatly enhanced for thin polycrystalline absorber films with interface passivation. Device performance was measured and current collection was mapped spatially by light-beam-induced current.« less

Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

NASA Astrophysics Data System (ADS)

Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

2018-04-01

Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

Compact lumped circuit model of discharges in DC accelerator using partial element equivalent circuit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, Srutarshi; Rajan, Rehim N.; Singh, Sandeep K.

2014-07-01

DC Accelerators undergoes different types of discharges during its operation. A model depicting the discharges has been simulated to study the different transient conditions. The paper presents a Physics based approach of developing a compact circuit model of the DC Accelerator using Partial Element Equivalent Circuit (PEEC) technique. The equivalent RLC model aids in analyzing the transient behavior of the system and predicting anomalies in the system. The electrical discharges and its properties prevailing in the accelerator can be evaluated by this equivalent model. A parallel coupled voltage multiplier structure is simulated in small scale using few stages of coronamore » guards and the theoretical and practical results are compared. The PEEC technique leads to a simple model for studying the fault conditions in accelerator systems. Compared to the Finite Element Techniques, this technique gives the circuital representation. The lumped components of the PEEC are used to obtain the input impedance and the result is also compared to that of the FEM technique for a frequency range of (0-200) MHz. (author)« less

Diamond-like nanocomposite: a novel promising carbon based thin film as antireflection and passivation coating for silicon solar cell

NASA Astrophysics Data System (ADS)

Jana, Sukhendu; Das, Sayan; De, Debasish; Mondal, Anup; Gangopadhyay, Utpal

2018-02-01

Presently, silicon nitride (SiN x ) is widely used as antireflection coating (ARC) on p-type silicon solar cell. But, two highly toxic gasses ammonia and silane are used. In the present study, the ARC and passivation properties of diamond-like nanocomposite (DLN) thin film on silicon solar cell have been investigated. The DLN thin film has been deposited by rf-PACVD process using liquid precursor HMDSO in argon plasma. The film has been characterized by FESEM, HRTEM, FTIR, and Raman spectroscopy. The optical properties have been estimated by UV-vis-NIR spectroscopy. The minimum reflection has been achieved to 0.75% at 630 nm. Both the short circuit current density and open circuit voltage has been increased significantly from 28.6 mA cm-2 to 35.5 mA cm-2 and 0.551 V to 0.613 V respectively. The field effect passivation has been confirmed by dark IV characterization of c-Si /DLN heterojunction structure. All these lead to enhancement of efficiency by almost 4% absolute, which is comparable to SiN x . The ammonia and silane free deposited DLN thin film has a great potential to use as ARC for silicon based solar cell.

Hemocompatibility Improvement of Chromium-Bearing Bare-Metal Stent Platform After Magnetoelectropolishing

NASA Astrophysics Data System (ADS)

Rokicki, Ryszard; Haider, Waseem; Maffi, Shivani Kaushal

2015-01-01

Research was undertaken to determine the influence of the increased content of chromium in the outermost passive layer of magneto-electrochemically refined Co-Cr alloy L-605 surface on its hemocompatibility. The chemistry, roughness, surface energy, and wettability of conventionally electropolished (EP) and magnetoelectropolished (MEP) samples were studied with x-ray photoelectron spectroscopy (XPS), open circuit potential, atomic force microscopy, and contact angle meter. In vitro hemocompatibility of tested material surfaces was assessed using two important indicators of vascular responses to biomaterial, namely endothelialization and platelets adhesion. The endothelialization was assessed by seeding and incubating samples with human umbilical vein endothelial cells (HUVEC) for 3 days before counting and observing them under a fluorescent microscope. The platelet (rich plasma blood) adhesion and activation test on EP and MEP L-605 alloy surfaces was assessed using a laser scanning confocal microscope. The XPS analysis of MEP samples showed significant enrichment of the passive layer with Cr and O when compared with the EP one. The amount of other elements in the passive layer did not show a significant difference between EP and MEP treatments. The adhesion of HUVEC cells shows remarkable affinity to surfaces enriched in Cr (MEP) with almost 100% confluency. In addition, the number of platelets that adhered to standard EP surfaces was higher compared to the MEP surface. The present study shows that the chromium-enriched surface of cobalt-chromium alloy L-605 by the magnetoelectropolishing process tremendously improves surface hemocompatibility with regard to stent functionality by enhanced endothelialization and lower platelet adhesion and should be taken under consideration as an alternative surface of biodegradable polymer drug-eluting stents, polymer-free drug-eluting stents as well as bare-metal stents.

Crosstalk-free operation of multielement superconducting nanowire single-photon detector array integrated with single-flux-quantum circuit in a 0.1 W Gifford-McMahon cryocooler.

PubMed

Yamashita, Taro; Miki, Shigehito; Terai, Hirotaka; Makise, Kazumasa; Wang, Zhen

2012-07-15

We demonstrate the successful operation of a multielement superconducting nanowire single-photon detector (SSPD) array integrated with a single-flux-quantum (SFQ) readout circuit in a compact 0.1 W Gifford-McMahon cryocooler. A time-resolved readout technique, where output signals from each element enter the SFQ readout circuit with finite time intervals, revealed crosstalk-free operation of the four-element SSPD array connected with the SFQ readout circuit. The timing jitter and the system detection efficiency were measured to be 50 ps and 11.4%, respectively, which were comparable to the performance of practical single-pixel SSPD systems.

Fabrication Of High-Tc Superconducting Integrated Circuits

NASA Technical Reports Server (NTRS)

Bhasin, Kul B.; Warner, Joseph D.

1992-01-01

Microwave ring resonator fabricated to demonstrate process for fabrication of passive integrated circuits containing high-transition-temperature superconductors. Superconductors increase efficiencies of communication systems, particularly microwave communication systems, by reducing ohmic losses and dispersion of signals. Used to reduce sizes and masses and increase aiming accuracies and tracking speeds of millimeter-wavelength, electronically steerable antennas. High-Tc superconductors preferable for such applications because they operate at higher temperatures than low-Tc superconductors do, therefore, refrigeration systems needed to maintain superconductivity designed smaller and lighter and to consume less power.

170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits.

PubMed

Rouvalis, E; Chtioui, M; van Dijk, F; Lelarge, F; Fice, M J; Renaud, C C; Carpintero, G; Seeds, A J

2012-08-27

We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kephart, Jason M.; Kindvall, Anna; Williams, Desiree

Commercial CdTe PV modules have polycrystalline thin films deposited on glass, and devices made in this format have exceeded 22% efficiency. Devices made by the authors with a magnesium zinc oxide window layer and tellurium back contact have achieved efficiency over 18%, but these cells still suffer from an open-circuit voltage far below ideal values. Oxide passivation layers made by sputter deposition have the potential to increase voltage by reducing interface recombination. CdTe devices with these passivation layers were studied with photoluminescence (PL) emission spectroscopy and time-resolved photoluminescence (TRPL) to detect an increase in minority carrier lifetime. Because these oxidemore » materials exhibit barriers to carrier collection, micropatterning was used to expose small point contacts while still allowing interface passivation. TRPL decay lifetimes have been greatly enhanced for thin polycrystalline absorber films with interface passivation. Device performance was measured and current collection was mapped spatially by light-beam-induced current.« less

Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

NASA Astrophysics Data System (ADS)

Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

2017-08-01

Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.

PubMed

Sun, Yiling; Gao, Pingqi; He, Jian; Zhou, Suqiong; Ying, Zhiqin; Yang, Xi; Xiang, Yong; Ye, Jichun

2016-12-01

Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (V oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PSS, rear-SiNx:H, front PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

Improved circuit for measuring capacitive and inductive reactances

NASA Technical Reports Server (NTRS)

Dalins, I.; Mc Carty, V.

1967-01-01

Amplifier circuit measures very small changes of capacitive or inductive reactance, such as produced by a variable capacitance or a variable inductance displacement transducer. The circuit employs reactance-sensing oscillators in which field effect transistors serve as the active elements.

Product assurance technology for custom LSI/VLSI electronics

NASA Technical Reports Server (NTRS)

Buehler, M. G.; Blaes, B. R.; Jennings, G. A.; Moore, B. T.; Nixon, R. H.; Pina, C. A.; Sayah, H. R.; Sievers, M. W.; Stahlberg, N. F.

1985-01-01

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification.

ELECTRONIC PULSE SCALING CIRCUITS

DOEpatents

Cooke-Yarborough, E.H.

1958-11-18

Electronic pulse scaling circults of the klnd comprlsing a serles of bi- stable elements connected ln sequence, usually in the form of a rlng so as to be cycllcally repetitive at the highest scallng factor, are described. The scaling circuit comprises a ring system of bi-stable elements each arranged on turn-off to cause, a succeeding element of the ring to be turned-on, and one being arranged on turn-off to cause a further element of the ring to be turned-on. In addition, separate means are provided for applying a turn-off pulse to all the elements simultaneously, and for resetting the elements to a starting condition at the end of each cycle.

Waveguide Grating For Polarization Preprocessing Circuits

NASA Astrophysics Data System (ADS)

Voirin, Guy; Gradisnik, F.; Parriaux, Olivier M.; Gale, Michael T.; Kunz, Rino E.; Curtis, B. J.; Lehmann, Hans W.

1989-12-01

Periodically corrugated optical waveguides on glass with non-collinear coupling have been investigated both theoretically and experimentally. For a TE or TM polarized guided mode of a planar waveguide obliquely incident on a grating pad, there are four characteristic angles corresponding to the coupling with TE and TM reflected modes fulfilling the Bragg condition. The reflectivity is obtained by solving the coupled mode equations for the non-collinear case. The modelling shows that integrated passive functions such as polarization splitting and interference can be achieved. The polarization interference element uses the property that the coupling coefficients TM-TE and TE-TE are equal at defined incidence angles. Since the angle between the two reflected TE beams is only a few minutes of arc, the two beams can interfere. The waveguides are made by K+ ion exchange in BK7 glass for 3 hours at 380°C. The structure was designed for use at a wavelength of 633 nm and uses a 485 nm period grating which was fabricated by holographic exposure and plasma etching techniques in a 50 nm TiO2 layer e-beam evaporated onto the glass surface. The reflectivity of the grating structure was studied experimentally and compared with theory. The diffraction angles are within 30 " of arc of the predicted angles. The measured reflectivities reached 20 %. The feasibility of realizing an integrated optic preprocessing circuit for polarization interferometry has been demonstrated.

Comparative performance analysis of shunt and series passive filter for LED lamp

NASA Astrophysics Data System (ADS)

Sarwono, Edi; Facta, Mochammad; Handoko, Susatyo

2018-03-01

Light Emitting Diode lamp or LED lamp nowadays is widely used by consumers as a new innovation in the lighting technologies due to its energy saving for low power consumption lamps for brighter light intensity. How ever, the LED lamp produce an electric pollutant known as harmonics. The harmonics is generated by rectifier as part of LED lamp circuit. The present of harmonics in current or voltage has made the source waveform from the grid is distorted. This distortion may cause inacurrate measurement, mall function, and excessive heating for any element at the grid. This paper present an analysis work of shunt and series filters to suppress the harmonics generated by the LED lamp circuit. The work was initiated by conducting several tests to investigate the harmonic content of voltage and currents. The measurements in this work were carried out by using HIOKI Power Quality Analyzer 3197. The measurement results showed that the harmonics current of tested LED lamps were above the limit of IEEE standard 519-2014. Based on the measurement results shunt and series filters were constructed as low pass filters. The bode analysis were appled during construction and prediction of the filters performance. Based on experimental results, the application of shunt filter at input side of LED lamp has reduced THD current up to 88%. On the other hand, the series filter has significantly reduced THD current up to 92%.

Chatter reduction in boring process by using piezoelectric shunt damping with experimental verification

NASA Astrophysics Data System (ADS)

Yigit, Ufuk; Cigeroglu, Ender; Budak, Erhan

2017-09-01

Chatter is a self-excited type of vibration that develops during machining due to process-structure dynamic interactions resulting in modulated chip thickness. Chatter is an important problem as it results in poor surface quality, reduced productivity and tool life. The stability of a cutting process is strongly influenced by the frequency response function (FRF) at the cutting point. In this study, the effect of piezoelectric shunt damping on chatter vibrations in a boring process is studied. In piezoelectric shunt damping method, an electrical impedance is connected to a piezoelectric transducer which is bonded on cutting tool. Electrical impedance of the circuit consisting of piezoceramic transducer and passive shunt is tuned to the desired natural frequency of the cutting tool in order to maximize damping. The optimum damping is achieved in analytical and finite element models (FEM) by using a genetic algorithm focusing on the real part of the tool point FRF rather than the amplitude. Later, a practical boring bar is considered where the optimum circuit parameters are obtained by the FEM. Afterwards, the effect of the optimized piezoelectric shunt damping on the dynamic rigidity and absolute stability limit of the cutting process are investigated experimentally by modal analysis and cutting tests. It is both theoretically and experimentally shown that application of piezoelectric shunt damping results in a significant increase in the absolute stability limit in boring operations.

A compact design for the Josephson mixer: The lumped element circuit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pillet, J.-D.; Collège de France, 11 place Marcelin Berthelot, 75005 Paris; Flurin, E.

2015-06-01

We present a compact and efficient design in terms of gain, bandwidth, and dynamical range for the Josephson mixer, the superconducting circuit performing three-wave mixing at microwave frequencies. In an all lumped-element based circuit with galvanically coupled ports, we demonstrate nondegenerate amplification for microwave signals over a bandwidth up to 50 MHz for a power gain of 20 dB. The quantum efficiency of the mixer is shown to be about 70%, and its saturation power reaches −112 dBm.

Practical guide for validated memristance measurements

NASA Astrophysics Data System (ADS)

Du, Nan; Shuai, Yao; Luo, Wenbo; Mayr, Christian; Schüffny, René; Schmidt, Oliver G.; Schmidt, Heidemarie

2013-02-01

Chua [IEEE Trans. Circuit Theory 18, 507-519 (1971), 10.1109/TCT.1971.1083337] predicted rather simple charge-flux curves for active and passive memristors (short for memory resistors) and presented active memristor circuit realizations already in the 1970 s. The first passive memristor has been presented in 2008 [D. B. Strukov, G. S. Snider, and D. R. Williams, Nature (London) 453, 80-83 (2008), 10.1038/nature06932]. Typically, memristors are traced in complicated hysteretic current-voltage curves. Therefore, the true essence of many new memristive devices has not been discovered so far. Here, we give a practical guide on how to use normalized charge-flux curves for the prediction of hysteretic current-voltage characteristics of memristors. In the case of memristive BiFeO3 thin film capacitor structures, the normalized charge-flux curves superimpose for different numbers of measurement points Ns and a different measurement time per measurement point Ts. Such normalized charge-flux curves can be used for the prediction of current-voltage characteristics for input signals with arbitrarily chosen Ns and Ts.

GaAs nanopillar-array solar cells employing in situ surface passivation

PubMed Central

Mariani, Giacomo; Scofield, Adam C.; Hung, Chung-Hong; Huffaker, Diana L.

2013-01-01

Arrays of III–V direct-bandgap semiconductor nanopillars represent promising photovoltaic candidates due to their inherent high optical absorption coefficients and minimized reflection arising from light trapping, efficient charge collection in the radial direction and the ability to synthesize them on low-cost platforms. However, the increased surface area results in surface states that hamper the power conversion efficiency. Here, we report the first demonstration of GaAs nanopillar-array photovoltaics employing epitaxial passivation with air mass 1.5 global power conversion efficiencies of 6.63%. High-bandgap epitaxial InGaP shells are grown in situ and cap the radial p–n junctions to alleviate surface-state effects. Under light, the photovoltaic devices exhibit open-circuit voltages of 0.44 V, short-circuit current densities of 24.3 mA cm−2 and fill factors of 62% with high external quantum efficiencies >70% across the spectral regime of interest. A novel titanium/indium tin oxide annealed alloy is exploited as transparent ohmic anode. PMID:23422665

The Elusive Memristor: Properties of Basic Electrical Circuits

ERIC Educational Resources Information Center

Joglekar, Yogesh N.; Wolf, Stephen J.

2009-01-01

We present an introduction to and a tutorial on the properties of the recently discovered ideal circuit element, a memristor. By definition, a memristor M relates the charge "q" and the magnetic flux [phi] in a circuit and complements a resistor R, a capacitor C and an inductor L as an ingredient of ideal electrical circuits. The properties of…

Reduced-order modeling of piezoelectric energy harvesters with nonlinear circuits under complex conditions

NASA Astrophysics Data System (ADS)

Xiang, Hong-Jun; Zhang, Zhi-Wei; Shi, Zhi-Fei; Li, Hong

2018-04-01

A fully coupled modeling approach is developed for piezoelectric energy harvesters in this work based on the use of available robust finite element packages and efficient reducing order modeling techniques. At first, the harvester is modeled using finite element packages. The dynamic equilibrium equations of harvesters are rebuilt by extracting system matrices from the finite element model using built-in commands without any additional tools. A Krylov subspace-based scheme is then applied to obtain a reduced-order model for improving simulation efficiency but preserving the key features of harvesters. Co-simulation of the reduced-order model with nonlinear energy harvesting circuits is achieved in a system level. Several examples in both cases of harmonic response and transient response analysis are conducted to validate the present approach. The proposed approach allows to improve the simulation efficiency by several orders of magnitude. Moreover, the parameters used in the equivalent circuit model can be conveniently obtained by the proposed eigenvector-based model order reduction technique. More importantly, this work establishes a methodology for modeling of piezoelectric energy harvesters with any complicated mechanical geometries and nonlinear circuits. The input load may be more complex also. The method can be employed by harvester designers to optimal mechanical structures or by circuit designers to develop novel energy harvesting circuits.

A Novel Crosstalk Suppression Method of the 2-D Networked Resistive Sensor Array

PubMed Central

Wu, Jianfeng; Wang, Lei; Li, Jianqing; Song, Aiguo

2014-01-01

The 2-D resistive sensor array in the row–column fashion suffered from the crosstalk problem for parasitic parallel paths. Firstly, we proposed an Improved Isolated Drive Feedback Circuit with Compensation (IIDFCC) based on the voltage feedback method to suppress the crosstalk. In this method, a compensated resistor was specially used to reduce the crosstalk caused by the column multiplexer resistors and the adjacent row elements. Then, a mathematical equivalent resistance expression of the element being tested (EBT) of this circuit was analytically derived and verified by the circuit simulations. The simulation results show that the measurement method can greatly reduce the influence on the EBT caused by parasitic parallel paths for the multiplexers' channel resistor and the adjacent elements. PMID:25046011

Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.

1985-01-01

Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

Elemental analysis using temporal gating of a pulsed neutron generator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitra, Sudeep

Technologies related to determining elemental composition of a sample that comprises fissile material are described herein. In a general embodiment, a pulsed neutron generator periodically emits bursts of neutrons, and is synchronized with an analyzer circuit. The bursts of neutrons are used to interrogate the sample, and the sample outputs gamma rays based upon the neutrons impacting the sample. A detector outputs pulses based upon the gamma rays impinging upon the material of the detector, and the analyzer circuit assigns the pulses to temporally-based bins based upon the analyzer circuit being synchronized with the pulsed neutron generator. A computing devicemore » outputs data that is indicative of elemental composition of the sample based upon the binned pulses.« less

Optimization of Wireless Power Transfer Systems Enhanced by Passive Elements and Metasurfaces

NASA Astrophysics Data System (ADS)

Lang, Hans-Dieter; Sarris, Costas D.

2017-10-01

This paper presents a rigorous optimization technique for wireless power transfer (WPT) systems enhanced by passive elements, ranging from simple reflectors and intermedi- ate relays all the way to general electromagnetic guiding and focusing structures, such as metasurfaces and metamaterials. At its core is a convex semidefinite relaxation formulation of the otherwise nonconvex optimization problem, of which tightness and optimality can be confirmed by a simple test of its solutions. The resulting method is rigorous, versatile, and general -- it does not rely on any assumptions. As shown in various examples, it is able to efficiently and reliably optimize such WPT systems in order to find their physical limitations on performance, optimal operating parameters and inspect their working principles, even for a large number of active transmitters and passive elements.

Selective Manipulation of Neural Circuits.

PubMed

Park, Hong Geun; Carmel, Jason B

2016-04-01

Unraveling the complex network of neural circuits that form the nervous system demands tools that can manipulate specific circuits. The recent evolution of genetic tools to target neural circuits allows an unprecedented precision in elucidating their function. Here we describe two general approaches for achieving circuit specificity. The first uses the genetic identity of a cell, such as a transcription factor unique to a circuit, to drive expression of a molecule that can manipulate cell function. The second uses the spatial connectivity of a circuit to achieve specificity: one genetic element is introduced at the origin of a circuit and the other at its termination. When the two genetic elements combine within a neuron, they can alter its function. These two general approaches can be combined to allow manipulation of neurons with a specific genetic identity by introducing a regulatory gene into the origin or termination of the circuit. We consider the advantages and disadvantages of both these general approaches with regard to specificity and efficacy of the manipulations. We also review the genetic techniques that allow gain- and loss-of-function within specific neural circuits. These approaches introduce light-sensitive channels (optogenetic) or drug sensitive channels (chemogenetic) into neurons that form specific circuits. We compare these tools with others developed for circuit-specific manipulation and describe the advantages of each. Finally, we discuss how these tools might be applied for identification of the neural circuits that mediate behavior and for repair of neural connections.

Processing and characterization of device solder interconnection and module attachment for power electronics modules

NASA Astrophysics Data System (ADS)

Haque, Shatil

This research is focused on the processing of an innovative three-dimensional packaging architecture for power electronics building blocks with soldered device interconnections and subsequent characterization of the module's critical interfaces. A low-cost approach termed metal posts interconnected parallel plate structure (MPIPPS) was developed for packaging high-performance modules of power electronics building blocks (PEBB). The new concept implemented direct bonding of copper posts, not wire bonding of fine aluminum wires, to interconnect power devices as well as joining the different circuit planes together. We have demonstrated the feasibility of this packaging approach by constructing PEBB modules (consisting of Insulated Gate Bipolar Transistors (IGBTs), diodes, and a few gate driver elements and passive components). In the 1st phase of module fabrication with IGBTs with Si3N 4 passivation, we had successfully fabricated packaged devices and modules using the MPIPPS technique. These modules were tested electrically and thermally, and they operated at pulse-switch and high power stages up to 6kW. However, in the 2nd phase of module fabrication with polyimide passivated devices, we experienced significant yield problems due to metallization difficulties of these devices. The under-bump metallurgy scheme for the development of a solderable interface involved sputtering of Ti-Ni-Cu and Cr-Cu, and an electroless deposition of Zn-Ni-Au metallization. The metallization process produced excellent yield in the case of Si3N4 passivated devices. However, under the same metallization schemes, devices with a polyimide passivation exhibited inconsistent electrical contact resistance. We found that organic contaminants such as hydrocarbons remain in the form of thin monolayers on the surface, even in the case of as-received devices from the manufacturer. Moreover, in the case of polyimide passivated devices, plasma cleaning introduced a few carbon constituents on the surface, which was not observed in the case of Si3N4 passivated devices. X-Ray Photoelectron Spectroscopy (XPS) Spectra showed evidence of possible carbon contaminants, such as carbide (˜282.9eV) and graphite (˜284.3eV) on the surface at binding energies below the binding energy of the hydrocarbon peak (C 1s at 285eV). Whereas above the hydrocarbon peak energy level, carbon-nitrogen compounds, single bond carbon compounds (˜285.9eV) and double bond carbon compounds (˜288.5eV) were evident. The majority of the carbon composition on the pad surface was associated with hydrocarbons, which were hydrophobic in nature, thus making the device contact pad less wettable. (Abstract shortened by UMI.)

Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

PubMed

Wang, Wei-Cheng; Tsai, Meng-Chen; Yang, Jason; Hsu, Chuck; Chen, Miin-Jang

2015-05-20

In this study, efficient nanotextured black silicon (NBSi) solar cells composed of silicon nanowire arrays and an Al2O3/TiO2 dual-layer passivation stack on the n(+) emitter were fabricated. The highly conformal Al2O3 and TiO2 surface passivation layers were deposited on the high-aspect-ratio surface of the NBSi wafers using atomic layer deposition. Instead of the single Al2O3 passivation layer with a negative oxide charge density, the Al2O3/TiO2 dual-layer passivation stack treated with forming gas annealing provides a high positive oxide charge density and a low interfacial state density, which are essential for the effective field-effect and chemical passivation of the n(+) emitter. In addition, the Al2O3/TiO2 dual-layer passivation stack suppresses the total reflectance over a broad range of wavelengths (400-1000 nm). Therefore, with the Al2O3/TiO2 dual-layer passivation stack, the short-circuit current density and efficiency of the NBSi solar cell were increased by 11% and 20%, respectively. In conclusion, a high efficiency of 18.5% was achieved with the NBSi solar cells by using the n(+)-emitter/p-base structure passivated with the Al2O3/TiO2 stack.

System for RFID-Enabled Information Collection

NASA Technical Reports Server (NTRS)

Kennedy, Timothy F. (Inventor); Fink, Patrick W. (Inventor); Lin, Gregory Y. (Inventor); Ngo, Phong H. (Inventor)

2017-01-01

A sensor and system provide for radio frequency identification (RFID)-enabled information collection. The sensor includes a ring-shaped element and an antenna. The ring-shaped element includes a conductive ring and an RFID integrated circuit. The antenna is spaced apart from the ring-shaped element and defines an electrically-conductive path commensurate in size and shape to at least a portion of the conductive ring. The system may include an interrogator for energizing the ring-shaped element and receiving a data transmission from the RFID integrated circuit that has been energized for further processing by a processor.

Novel AlInN/GaN integrated circuits operating up to 500 °C

NASA Astrophysics Data System (ADS)

Gaska, R.; Gaevski, M.; Jain, R.; Deng, J.; Islam, M.; Simin, G.; Shur, M.

2015-11-01

High electron concentration in 2DEG channel of AlInN/GaN devices is remarkably stable over a broad temperature range, enabling device operation above 500 °C. The developed IC technology is based on three key elements: (1) exceptional quality AlInN/GaN heterostructure with very high carrier concentration and mobility enables IC fast operation in a broad temperature range; (2) heterostructure field effect transistor approach t provides fully planar IC structure which is easy to scale and to combine with the other high temperature electronic components; (3) fabrication advancements including novel metallization scheme and high-K passivation/gate dielectrics enable high temperature operation. The feasibility of the developed technology was confirmed by fabrication and testing of the high temperature inverter and differential amplifier ICs using AlInN/GaN heterostructures. The developed ICs showed stable performance with unit-gain bandwidth above 1 MHz and internal response time 45 ns at temperatures as high as 500 °C.

On-chip microwave circulators using quantum Hall plasmonics

NASA Astrophysics Data System (ADS)

Mahoney, Alice; Colless, James; Pauka, Sebastian; Hornibrook, John; Doherty, Andrew; Reilly, David; Peeters, Lucas; Fox, Eli; Goldhaber-Gordon, David; Kou, Xuefeng; Pan, Lei; Wang, Kang; Watson, John; Gardner, Geoffrey; Manfra, Michael

Circulators are directional circuit elements integral to technologies including radar systems, microwave communication transceivers and the readout of quantum information devices. Their non-reciprocity commonly arises from the interference of microwaves over the centimetre-scale of the signal wavelength in the presence of bulky magnetic media that breaks time-reversal symmetry. We present a completely passive on-chip microwave circulator with size 1/1000th the wavelength by exploiting the chiral, `slow-light' response of a GaAs/AlGaAs 2-dimensional electron gas in the quantum Hall regime. Further, by implementing this circulator design on a thin film of a magnetic topological insulator (Cr0.12(Bi0.26Sb0.62)2Te3), we show that similar non-reciprocity can be achieved at zero magnetic field. This additional mode of operation serves as a non-invasive probe of edge states in the quantum anomalous Hall effect, while also extending the possibility for integration with superconducting devices.

A lumped-circuit model for the radiation impedance of a circular piston in a rigid baffle.

PubMed

Bozkurt, Ayhan

2008-09-01

The radiation impedance of a piston transducer mounted in a rigid baffle has been widely addressed in the literature. The real and imaginary parts of the impedance are described by the first order Bessel and Struve functions, respectively. Although there are power series expansions for both functions, the analytic formulation of a lumped circuit is not trivial. In this paper, we present an empirical approach to the derivation of a lumped-circuit model for the radiation impedance expression, based on observations on the near-field behavior of stored kinetic and elastic energy. The field analysis is carried out using a finite element method model of the piston and surrounding fluid medium. We show that fluctuations in the real and imaginary components of the impedance can be modeled by series and shunt tank circuits, each of which shape a certain section of the impedance curve. Because the model is composed of lumped-circuit elements, it can be used in circuit simulators. Consequently, the proposed model is useful for the analysis of transducer front-end circuits.

Flexible organic transistors and circuits with extreme bending stability

NASA Astrophysics Data System (ADS)

Sekitani, Tsuyoshi; Zschieschang, Ute; Klauk, Hagen; Someya, Takao

2010-12-01

Flexible electronic circuits are an essential prerequisite for the development of rollable displays, conformable sensors, biodegradable electronics and other applications with unconventional form factors. The smallest radius into which a circuit can be bent is typically several millimetres, limited by strain-induced damage to the active circuit elements. Bending-induced damage can be avoided by placing the circuit elements on rigid islands connected by stretchable wires, but the presence of rigid areas within the substrate plane limits the bending radius. Here we demonstrate organic transistors and complementary circuits that continue to operate without degradation while being folded into a radius of 100μm. This enormous flexibility and bending stability is enabled by a very thin plastic substrate (12.5μm), an atomically smooth planarization coating and a hybrid encapsulation stack that places the transistors in the neutral strain position. We demonstrate a potential application as a catheter with a sheet of transistors and sensors wrapped around it that enables the spatially resolved measurement of physical or chemical properties inside long, narrow tubes.

Fate-Regulating Circuits in Viruses: From Discovery to New Therapy Targets

PubMed Central

Pai, Anand; Weinberger, Leor S.

2018-01-01

Current antivirals effectively target diverse viruses at various stages of their viral lifecycles. Nevertheless, curative therapy has remained elusive for important pathogens (e.g., HIV-1 and herpesviruses), in large part due to viral latency and the evolution of resistance to existing therapies. Here, we review the discovery of viral ‘master’ circuits: virus-encoded auto-regulatory gene networks that can autonomously control viral expression programs (i.e., between active, latent, and abortive fates). These circuits offer a potential new class of antivirals that could lead to intrinsic combination-antiviral therapies within a single molecule—evolutionary escape from such circuit ‘disruptors’ would require simultaneous evolution of both the cis regulatory element (e.g., the DNA-binding site) and the trans element (e.g., the transcription factor) for the circuit’s function to be recapitulated. We review the architectures of these fate-regulating master circuits in HIV-1 and the human herpesvirus cytomegalovirus (CMV) along with potential circuit-disruption strategies that may ultimately enable escape-resistant antiviral therapies. PMID:28800289

A three-dimensional finite element evaluation of magnetic attachment attractive force and the influence of the magnetic circuit.

PubMed

Kumano, Hirokazu; Nakamura, Yoshinori; Kanbara, Ryo; Takada, Yukyo; Ochiai, Kent T; Tanaka, Yoshinobu

2014-01-01

The finite element method has been considered to be excellent evaluative technique to study magnetic circuit optimization. The present study analyzed and quantitatively evaluated the different effects of magnetic circuit on attractive force and magnetic flux density using a three-dimensional finite element method for comparative evaluation. The diameter of a non-magnetic material in the shield disk of a magnetic assembly was variably increased by 0.1 mm to a maximum 2.0 mm in this study design. The analysis results demonstrate that attractive force increases until the diameter of the non-magnetic spacing material reaches a diameter of 0.5 mm where it peaks and then decreases as the overall diameter increases over 0.5 mm. The present analysis suggested that the attractive force for a magnetic attachment is optimized with an appropriate magnetic assembly shield disk diameter using a non-magnetic material to effectively change the magnetic circuit efficiency and resulting retention.

Manganese-enhanced magnetic resonance imaging (MEMRI) reveals brain circuitry involved in responding to an acute novel stress in rats with a history of repeated social stress.

PubMed

Bangasser, Debra A; Lee, Catherine S; Cook, Philip A; Gee, James C; Bhatnagar, Seema; Valentino, Rita J

2013-10-02

Responses to acute stressors are determined in part by stress history. For example, a history of chronic stress results in facilitated responses to a novel stressor and this facilitation is considered to be adaptive. We previously demonstrated that repeated exposure of rats to the resident-intruder model of social stress results in the emergence of two subpopulations that are characterized by different coping responses to stress. The submissive subpopulation failed to show facilitation to a novel stressor and developed a passive strategy in the Porsolt forced swim test. Because a passive stress coping response has been implicated in the propensity to develop certain psychiatric disorders, understanding the unique circuitry engaged by exposure to a novel stressor in these subpopulations would advance our understanding of the etiology of stress-related pathology. An ex vivo functional imaging technique, manganese-enhanced magnetic resonance imaging (MEMRI), was used to identify and distinguish brain regions that are differentially activated by an acute swim stress (15 min) in rats with a history of social stress compared to controls. Specifically, Mn(2+) was administered intracerebroventricularly prior to swim stress and brains were later imaged ex vivo to reveal activated structures. When compared to controls, all rats with a history of social stress showed greater activation in specific striatal, hippocampal, hypothalamic, and midbrain regions. The submissive subpopulation of rats was further distinguished by significantly greater activation in amygdala, bed nucleus of the stria terminalis, and septum, suggesting that these regions may form a circuit mediating responses to novel stress in individuals that adopt passive coping strategies. The finding that different circuits are engaged by a novel stressor in the two subpopulations of rats exposed to social stress implicates a role for these circuits in determining individual strategies for responding to stressors. Finally, these data underscore the utility of ex vivo MEMRI to identify and distinguish circuits engaged in behavioral responses. Copyright © 2013 Elsevier Inc. All rights reserved.

Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

PubMed

Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

2016-06-08

Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

Brain-derived neurotrophic factor and addiction: Pathological versus therapeutic effects on drug seeking

PubMed Central

Barker, Jacqueline M.; Taylor, Jane R.; De Vries, Taco J.; Peters, Jamie

2015-01-01

Many abused drugs lead to changes in endogenous brain-derived neurotrophic factor (BDNF) expression in neural circuits responsible for addictive behaviors. BDNF is a known molecular mediator of memory consolidation processes, evident at both behavioral and neurophysiological levels. Specific neural circuits are responsible for storing and executing drug-procuring motor programs, whereas other neural circuits are responsible for the active suppression of these “seeking” systems. These seeking-circuits are established as associations are formed between drug-associated cues and the conditioned responses they elicit. Such conditioned responses (e.g. drug seeking) can be diminished either through a passive weakening of seeking-circuits or an active suppression of those circuits through extinction. Extinction learning occurs when the association between cues and drug are violated, for example, by cue exposure without the drug present. Cue exposure therapy has been proposed as a therapeutic avenue for the treatment of addictions. Here we explore the role of BDNF in extinction circuits, compared to seeking-circuits that “incubate” over prolonged withdrawal periods. We begin by discussing the role of BDNF in extinction memory for fear and cocaine-seeking behaviors, where extinction circuits overlap in infralimbic prefrontal cortex (PFC). We highlight the ability of estrogen to promote BDNF-like effects in hippocampal–prefrontal circuits and consider the role of sex differences in extinction and incubation of drug-seeking behaviors. Finally, we examine how opiates and alcohol “break the mold” in terms of BDNF function in extinction circuits. PMID:25451116

Microfabricated field calibration assembly for analytical instruments

DOEpatents

Robinson, Alex L [Albuquerque, NM; Manginell, Ronald P [Albuquerque, NM; Moorman, Matthew W [Albuquerque, NM; Rodacy, Philip J [Albuquerque, NM; Simonson, Robert J [Cedar Crest, NM

2011-03-29

A microfabricated field calibration assembly for use in calibrating analytical instruments and sensor systems. The assembly comprises a circuit board comprising one or more resistively heatable microbridge elements, an interface device that enables addressable heating of the microbridge elements, and, in some embodiments, a means for positioning the circuit board within an inlet structure of an analytical instrument or sensor system.

Using of explosive technologies for development of a compact current-limiting device for operation on 110 kV class systems

NASA Astrophysics Data System (ADS)

Shurupov, A. V.; Shurupov, M. A.; Kozlov, A. A.; Kotov, A. V.

2016-11-01

This paper considers the possibility of creating on new physical principles a highspeed current-limiting device (CLD) for the networks with voltage of 110 kV, namely, on the basis of the explosive switching elements. The device is designed to limit the steady short-circuit current to acceptable values for the time does not exceed 3 ms at electric power facilities. The paper presents an analysis of the electrical circuit of CLD. The main features of the scheme are: a new high-speed switching element with high regenerating voltage; fusible switching element that enables to limit the overvoltage after sudden breakage of network of the explosive switch; non-inductive resistor with a high heat capacity and a special reactor with operating time less than 1 s. We analyzed the work of the CLD with help of special software PSPICE, which is based on the equivalent circuit of single-phase short circuit to ground in 110 kV network. Analysis of the equivalent circuit operation CLD shows its efficiency and determines the CLD as a perspective direction of the current-limiting devices of new generation.

Locality of interactions for planar memristive circuits

DOE PAGES

Caravelli, Francesco

2017-11-08

The dynamics of purely memristive circuits has been shown to depend on a projection operator which expresses the Kirchhoff constraints, is naturally non-local in nature, and does represent the interaction between memristors. In the present paper we show that for the case of planar circuits, for which a meaningful Hamming distance can be defined, the elements of such projector can be bounded by exponentially decreasing functions of the distance. We provide a geometrical interpretation of the projector elements in terms of determinants of Dirichlet Laplacian of the dual circuit. For the case of linearized dynamics of the circuit for whichmore » a solution is known, this can be shown to provide a light cone bound for the interaction between memristors. Furthermore, this result establishes a finite speed of propagation of signals across the network, despite the non-local nature of the system.« less

Periodic, Quasi-periodic and Chaotic Dynamics in Simple Gene Elements with Time Delays

PubMed Central

Suzuki, Yoko; Lu, Mingyang; Ben-Jacob, Eshel; Onuchic, José N.

2016-01-01

Regulatory gene circuit motifs play crucial roles in performing and maintaining vital cellular functions. Frequently, theoretical studies of gene circuits focus on steady-state behaviors and do not include time delays. In this study, the inclusion of time delays is shown to entirely change the time-dependent dynamics for even the simplest possible circuits with one and two gene elements with self and cross regulations. These elements can give rise to rich behaviors including periodic, quasi-periodic, weak chaotic, strong chaotic and intermittent dynamics. We introduce a special power-spectrum-based method to characterize and discriminate these dynamical modes quantitatively. Our simulation results suggest that, while a single negative feedback loop of either one- or two-gene element can only have periodic dynamics, the elements with two positive/negative feedback loops are the minimalist elements to have chaotic dynamics. These elements typically have one negative feedback loop that generates oscillations, and another unit that allows frequent switches among multiple steady states or between oscillatory and non-oscillatory dynamics. Possible dynamical features of several simple one- and two-gene elements are presented in details. Discussion is presented for possible roles of the chaotic behavior in the robustness of cellular functions and diseases, for example, in the context of cancer. PMID:26876008

Periodic, Quasi-periodic and Chaotic Dynamics in Simple Gene Elements with Time Delays

NASA Astrophysics Data System (ADS)

Suzuki, Yoko; Lu, Mingyang; Ben-Jacob, Eshel; Onuchic, José N.

2016-02-01

Regulatory gene circuit motifs play crucial roles in performing and maintaining vital cellular functions. Frequently, theoretical studies of gene circuits focus on steady-state behaviors and do not include time delays. In this study, the inclusion of time delays is shown to entirely change the time-dependent dynamics for even the simplest possible circuits with one and two gene elements with self and cross regulations. These elements can give rise to rich behaviors including periodic, quasi-periodic, weak chaotic, strong chaotic and intermittent dynamics. We introduce a special power-spectrum-based method to characterize and discriminate these dynamical modes quantitatively. Our simulation results suggest that, while a single negative feedback loop of either one- or two-gene element can only have periodic dynamics, the elements with two positive/negative feedback loops are the minimalist elements to have chaotic dynamics. These elements typically have one negative feedback loop that generates oscillations, and another unit that allows frequent switches among multiple steady states or between oscillatory and non-oscillatory dynamics. Possible dynamical features of several simple one- and two-gene elements are presented in details. Discussion is presented for possible roles of the chaotic behavior in the robustness of cellular functions and diseases, for example, in the context of cancer.

High sensitivity broadband 360GHz passive receiver for TeraSCREEN

NASA Astrophysics Data System (ADS)

Wang, Hui; Oldfield, Matthew; Maestrojuán, Itziar; Platt, Duncan; Brewster, Nick; Viegas, Colin; Alderman, Byron; Ellison, Brian N.

2016-05-01

TeraSCREEN is an EU FP7 Security project aimed at developing a combined active, with frequency channel centered at 360 GHz, and passive, with frequency channels centered at 94, 220 and 360 GHz, imaging system for border controls in airport and commercial ferry ports. The system will include automatic threat detection and classification and has been designed with a strong focus on the ethical, legal and practical aspects of operating in these environments and with the potential threats in mind. Furthermore, both the passive and active systems are based on array receivers with the active system consisting of a 16 element MIMO FMCW radar centered at 360 GHz with a bandwidth of 30 GHz utilizing a custom made direct digital synthesizer. The 16 element passive receiver system at 360 GHz uses commercial Gunn diode oscillators at 90 GHz followed by custom made 90 to 180 GHz frequency doublers supplying the local oscillator for 360 GHz sub-harmonic mixers. This paper describes the development of the passive antenna module, local oscillator chain, frequency mixers and detectors used in the passive receiver array of this system. The complete passive receiver chain is characterized in this paper.

Prototype Focal-Plane-Array Optoelectronic Image Processor

NASA Technical Reports Server (NTRS)

Fang, Wai-Chi; Shaw, Timothy; Yu, Jeffrey

1995-01-01

Prototype very-large-scale integrated (VLSI) planar array of optoelectronic processing elements combines speed of optical input and output with flexibility of reconfiguration (programmability) of electronic processing medium. Basic concept of processor described in "Optical-Input, Optical-Output Morphological Processor" (NPO-18174). Performs binary operations on binary (black and white) images. Each processing element corresponds to one picture element of image and located at that picture element. Includes input-plane photodetector in form of parasitic phototransistor part of processing circuit. Output of each processing circuit used to modulate one picture element in output-plane liquid-crystal display device. Intended to implement morphological processing algorithms that transform image into set of features suitable for high-level processing; e.g., recognition.

Electronic gap sensor and method

DOEpatents

Williams, R.S.; King, E.L.; Campbell, S.L.

1991-08-06

Disclosed are an apparatus and method for regulating the gap between a casting nozzle and a casting wheel in which the gap between the casting nozzle and the casting wheel is monitored by means of at least one sensing element protruding from the face of the casting nozzle. The sensing element is preferably connected to a voltage source and the casting wheel grounded. When the sensing element contacts the casting wheel, an electric circuit is completed. The completion of the circuit can be registered by an indicator, and the presence or absence of a completed circuit indicates the relative position of the casting nozzle to the casting wheel. The relative positions of the casting nozzle and casting wheel can thereby be selectively adjusted to continually maintain a predetermined distance between their adjacent surfaces. 5 figures.

An Integrated Magnetic Circuit Model and Finite Element Model Approach to Magnetic Bearing Design

NASA Technical Reports Server (NTRS)

Provenza, Andrew J.; Kenny, Andrew; Palazzolo, Alan B.

2003-01-01

A code for designing magnetic bearings is described. The code generates curves from magnetic circuit equations relating important bearing performance parameters. Bearing parameters selected from the curves by a designer to meet the requirements of a particular application are input directly by the code into a three-dimensional finite element analysis preprocessor. This means that a three-dimensional computer model of the bearing being developed is immediately available for viewing. The finite element model solution can be used to show areas of magnetic saturation and make more accurate predictions of the bearing load capacity, current stiffness, position stiffness, and inductance than the magnetic circuit equations did at the start of the design process. In summary, the code combines one-dimensional and three-dimensional modeling methods for designing magnetic bearings.

Beam forming network

NASA Technical Reports Server (NTRS)

Cramer, P. W., Jr. (Inventor)

1985-01-01

The network, which is connected to a layer of 134 feed elements that transmit and receive microwaves, consists of a pair of circuit boards parallel to the feed element layer. One of the two boards has 87 dividers that each divide a signal to be transmitted into seven portions, and the other board has 134 combiners that each collect seven transmit signal portions and deliver the sum to one of the feed elements. A similar arrangement is used to handle received signals. The large number of interconnections are made by printed circuit conductors radiating from each of the numerous dividers and combiners, and by providing interconnection pins that interconnect the ends of pairs of conductors lying on the two boards. The printed circuit conductors extend in undulating paths that provide maximum separation of conductors to minimize crosstalk.

Electronic gap sensor and method

DOEpatents

Williams, Robert S.; King, Edward L.; Campbell, Steven L.

1991-01-01

An apparatus and method for regulating the gap between a casting nozzle and a casting wheel in which the gap between the casting nozzle and the casting wheel is monitored by means of at least one sensing element protruding from the face of the casting nozzle. The sensing element is preferably connected to a voltage source and the casting wheel grounded. When the sensing element contacts the casting wheel, an electric circuit is completed. The completion of the circuit can be registered by an indicator, and the presence or absence of a completed circuit indicates the relative position of the casting nozzle to the casting wheel. The relative positions of the casting nozzle and casting wheel can thereby be selectively adjusted to continually maintain a predetermined distance between their adjacent surfaces.

Passive chevron replicator

NASA Technical Reports Server (NTRS)

Oeffinger, Thomas R. (Inventor); Tocci, Leonard R. (Inventor)

1977-01-01

There is described a passive replicator device to be used in magnetic bubble domain systems. The replicator is passive, i.e., does not require an active element such as a current source or the like, and both propagates and replicates bubble domains. In a preferred embodiment, the replicator uses chevron type elements arranged in an appropriate pattern so as to interact with a pair of propagation paths wherein bubble domains are propagated. A bubble in one propagation path is routinely transferred therealong and, concurrently, replicated by the instant device into another propagation path. A plurality of elements arranged in juxtaposition to the chevrons assists in controlling the propagation of the bubbles through the respective propagation paths and, at the appropriate time, provides a cutting action wherein a bubble which is elongated between the chevrons of the two propagation paths is split into two separate bubbles.

Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Merghem, K.; Aubin, G.; Ramdane, A.

2015-09-14

We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.

The challenge of screen printed Ag metallization on nano-scale poly-silicon passivated contacts for silicon solar cells

NASA Astrophysics Data System (ADS)

Jiang, Lin; Song, Lixin; Yan, Li; Becht, Gregory; Zhang, Yi; Hoerteis, Matthias

2017-08-01

Passivated contacts can be used to reduce metal-induced recombination for higher energy conversion efficiency for silicon solar cells, and are obtained increasing attentions by PV industries in recent years. The reported thicknesses of passivated contact layers are mostly within tens of nanometer range, and the corresponding metallization methods are realized mainly by plating/evaporation technology. This high cost metallization cannot compete with the screen printing technology, and may affect its market potential comparing with the presently dominant solar cell technology. Very few works have been reported on screen printing metallization on passivated contact solar cells. Hence, there is a rising demand to realize screen printing metallization technology on this topic. In this work, we investigate applying screen printing metallization pastes on poly-silicon passivated contacts. The critical challenge for us is to build low contact resistance that can be competitive to standard technology while restricting the paste penetrations within the thin nano-scale passivated contact layers. The contact resistivity of 1.1mohm-cm2 and the open circuit voltages > 660mV are achieved, and the most appropriate thickness range is estimated to be around 80 150nm.

Active and passive compliance in an enhanced recovery programme.

PubMed

Thorn, Christopher C; White, Ian; Burch, Jennie; Malietzis, George; Kennedy, Robin; Jenkins, John T

2016-07-01

Enhanced recovery after surgery (ERAS) is a well-established and accepted practice following colorectal surgery and has been demonstrated to reduce hospital length of stay (LOS) and 30-day morbidity. Despite evidence to support the individual elements on which the programme is based, there remains uncertainty as to how many and which of these are required to realise its benefits. Furthermore, elements of an ERAS programme might either precipitate or reflect recovery, in which case compliance could have a role in the improvement or prediction of outcome. A multidimensional prospective database of 799 consecutive patients undergoing colorectal surgery within an established ERAS programme at a single institution was interrogated. After application of exclusion criteria, 614 patients were studied. The novel concept of 'active compliance' is introduced. An ERAS element is classified as 'active' if the participation of the patient is required to achieve its compliance. This contrasts with 'passive' compliance, where an intervention is delivered to the patient without their direct contribution. The short-term surgical outcomes of this cohort are reported with reference to ERAS protocol compliance. Compliance with the passive elements of the programme was higher than with the active elements. Univariate and multivariate analyses demonstrate that poor compliance with active but not passive elements of the programme was significantly associated with major morbidity. Receiver operator characteristic curve analysis demonstrated active compliance to be a stronger predictor of both major morbidity (AUC 0.71 vs. AUC 0.56) and length of stay (AUC 0.83 vs. 0.57) when compared with passive compliance. The results suggest that poor active compliance may be a surrogate marker of morbidity which can be recognised in the early post-operative period. This implies the potential for timely diagnosis and intervention. This aspect of ERAS compliance is clinically relevant yet has achieved scant attention. Independent validation of our observations is required.

The design of infrared information collection circuit based on embedded technology

NASA Astrophysics Data System (ADS)

Liu, Haoting; Zhang, Yicong

2013-07-01

S3C2410 processor is a 16/32 bit RISC embedded processor which based on ARM920T core and AMNA bus, and mainly for handheld devices, and high cost, low-power applications. This design introduces a design plan of the PIR sensor system, circuit and its assembling, debugging. The Application Circuit of the passive PIR alarm uses the invisibility of the infrared radiation well into the alarm system, and in order to achieve the anti-theft alarm and security purposes. When the body goes into the range of PIR sensor detection, sensors will detect heat sources and then the sensor will output a weak signal. The Signal should be amplified, compared and delayed; finally light emitting diodes emit light, playing the role of a police alarm.

Using Passive Two-Port Networks to Study the Forced Vibrations of Piezoceramic Transducers

NASA Astrophysics Data System (ADS)

Karlash, V. L.

2017-09-01

A generalization and subsequent development of experimental techniques, including methods of studying the phase-frequency relations between the measured components of admittance and instantaneous power are considered. The conditions of electric loading where electric currents, voltages, or instantaneous powers of constant amplitude in the piezoresonators are specified are numerically modeled. It is particularly established that the advanced Mason circuit with additional switch allows acquiring much more data on the forced vibrations of piezoceramic transducers than the classical circuit. The measured (at an arbitrary frequency) voltage drop across the piezoelement, its pull-up resistor, and at the input of the measuring circuit allow determining, with high accuracy, the current, conductivity, impedance, instantaneous power, and phase shifts when the amplitudes of electric current and voltage are given.

Evaluation of moving-coil loudspeaker and passive radiator parameters using normal-incidence sound transmission measurements: theoretical developments.

PubMed

Leishman, Timothy W; Anderson, Brian E

2013-07-01

The parameters of moving-coil loudspeaker drivers are typically determined using direct electrical excitation and measurement. However, as electro-mechano-acoustical devices, their parameters should also follow from suitable mechanical or acoustical evaluations. This paper presents the theory of an acoustical method of excitation and measurement using normal-incidence sound transmission through a baffled driver as a plane-wave tube partition. Analogous circuits enable key parameters to be extracted from measurement results in terms of open and closed-circuit driver conditions. Associated tools are presented that facilitate adjacent field decompositions and derivations of sound transmission coefficients (in terms of driver parameters) directly from the circuits. The paper also clarifies the impact of nonanechoic receiving tube terminations and the specific benefits of downstream field decompositions.

Corrosivity Sensor for Exposed Pipelines Based on Wireless Energy Transfer.

PubMed

Lawand, Lydia; Shiryayev, Oleg; Al Handawi, Khalil; Vahdati, Nader; Rostron, Paul

2017-05-30

External corrosion was identified as one of the main causes of pipeline failures worldwide. A solution that addresses the issue of detecting and quantifying corrosivity of environment for application to existing exposed pipelines has been developed. It consists of a sensing array made of an assembly of thin strips of pipeline steel and a circuit that provides a visual sensor reading to the operator. The proposed sensor is passive and does not require a constant power supply. Circuit design was validated through simulations and lab experiments. Accelerated corrosion experiment was conducted to confirm the feasibility of the proposed corrosivity sensor design.

Voc enhancement of a solar cell with doped Li+-PbS as the active layer

NASA Astrophysics Data System (ADS)

Chávez Portillo, M.; Alvarado Pulido, J.; Gallardo Hernández, S.; Soto Cruz, B. S.; Alcántara Iniesta, S.; Gutiérrez Pérez, R.; Portillo Moreno, O.

2018-06-01

In this report, we investigate the fabrication of solar cells obtained by chemical bath technique, based on CdS as window layer and PbS and PbS-Li+-doped as the active layer. We report open-circuit-voltage Voc values of ∼392 meV for PbS and ∼630 meV for PbSLi+-doped, a remarkable enhanced in the open circuit voltage is shown for solar cells with doped active layer. Li+ ion passivate the dangling bonds in PbS-metal layer interface in consequence reducing the recombination centers.

Photoconductive circuit element pulse generator

DOEpatents

Rauscher, Christen

1989-01-01

A pulse generator for characterizing semiconductor devices at millimeter wavelength frequencies where a photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test.

Gas electron multiplier (GEM) enhanced ionization chamber for fluorescence detector

NASA Astrophysics Data System (ADS)

Shaban, E. H.; Siddons, D. P.; Kuczewski, A.

2007-11-01

Detecting dilute elements in thin materials using extended X-ray absorption fluorescence spectroscopy (EXAFS) method requires a detector capable of high count rate and low noise. For detection of dilute elements, the fluorescence signal amplitude is often overcome by the presence of noise or background interference. In this paper we have used a gas ionization chamber enhanced by a gas electron multiplier (GEM) to amplify the primary ionized electrons due to the X-ray fluorescence of a dilute element. The GEM provides an essentially noise free electron amplification of the signal primary photoelectrons. It provides a larger output current prior to the electronic amplification, allowing a lower gain amplifier with lower electronic circuit noise contribution and hence improved S/ N ratio. In addition, since the signal is produced only by electrons, and not from ion motion, the detector is capable of recording rapidly changing signals. Iron in an arbitrary tree leaf was used as a test sample. This sample was measured using our detector SUBRSAB, and also with Lytle and passivated implanted planar silicon (PIPS) detectors. An improvement in the signal amplitude by a factor of 20 and a factor of 2 are recorded for the proposed detector with respect to the Lytle and PIPS detectors, respectively. Although the gain in signal over the PIPS detector is small for this detector, its lack of sensitivity to light and its low and temperature-independent dark current are further advantages.

Analysis of microstrip dipoles and slots transversely coupled to a microstrip line using the FDTD method

NASA Technical Reports Server (NTRS)

Tulintseff, A. N.

1993-01-01

Printed dipole elements and their complement, linear slots, are elementary radiators that have found use in low-profile antenna arrays. Low-profile antenna arrays, in addition to their small size and low weight characteristics, offer the potential advantage of low-cost, high-volume production with easy integration with active integrated circuit components. The design of such arrays requires that the radiation and impedance characteristics of the radiating elements be known. The FDTD (Finite-Difference Time-Domain) method is a general, straight-forward implementation of Maxwell's equations and offers a relatively simple way of analyzing both printed dipole and slot elements. Investigated in this work is the application of the FDTD method to the analysis of printed dipole and slot elements transversely coupled to an infinite transmission line in a multilayered configuration. Such dipole and slot elements may be used in dipole and slot series-fed-type linear arrays, where element offsets and interelement line lengths are used to obtain the desired amplitude distribution and beam direction, respectively. The design of such arrays is achieved using transmission line theory with equivalent circuit models for the radiating elements. In an equivalent circuit model, the dipole represents a shunt impedance to the transmission line, where the impedance is a function of dipole offset, length, and width. Similarly, the slot represents a series impedance to the transmission line. The FDTD method is applied to single dipole and slot elements transversely coupled to an infinite microstrip line using a fixed rectangular grid with Mur's second order absorbing boundary conditions. Frequency-dependent circuit and scattering parameters are obtained by saving desired time-domain quantities and using the Fourier transform. A Gaussian pulse excitation is applied to the microstrip transmission line, where the resulting reflected signal due to the presence of the radiating element is used to determine the equivalent element impedance.

Equivalent circuit modeling of a piezo-patch energy harvester on a thin plate with AC-DC conversion

NASA Astrophysics Data System (ADS)

Bayik, B.; Aghakhani, A.; Basdogan, I.; Erturk, A.

2016-05-01

As an alternative to beam-like structures, piezoelectric patch-based energy harvesters attached to thin plates can be readily integrated to plate-like structures in automotive, marine, and aerospace applications, in order to directly exploit structural vibration modes of the host system without mass loading and volumetric occupancy of cantilever attachments. In this paper, a multi-mode equivalent circuit model of a piezo-patch energy harvester integrated to a thin plate is developed and coupled with a standard AC-DC conversion circuit. Equivalent circuit parameters are obtained in two different ways: (1) from the modal analysis solution of a distributed-parameter analytical model and (2) from the finite-element numerical model of the harvester by accounting for two-way coupling. After the analytical modeling effort, multi-mode equivalent circuit representation of the harvester is obtained via electronic circuit simulation software SPICE. Using the SPICE software, electromechanical response of the piezoelectric energy harvester connected to linear and nonlinear circuit elements are computed. Simulation results are validated for the standard AC-AC and AC-DC configurations. For the AC input-AC output problem, voltage frequency response functions are calculated for various resistive loads, and they show excellent agreement with modal analysis-based analytical closed-form solution and with the finite-element model. For the standard ideal AC input-DC output case, a full-wave rectifier and a smoothing capacitor are added to the harvester circuit for conversion of the AC voltage to a stable DC voltage, which is also validated against an existing solution by treating the single-mode plate dynamics as a single-degree-of-freedom system.

Maskless lithography

DOEpatents

Sweatt, William C.; Stulen, Richard H.

1999-01-01

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

Maskless lithography

DOEpatents

Sweatt, W.C.; Stulen, R.H.

1999-02-09

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides. 12 figs.

Method for maskless lithography

DOEpatents

Sweatt, William C.; Stulen, Richard H.

2000-01-01

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

Synthesis of energy-efficient FSMs implemented in PLD circuits

NASA Astrophysics Data System (ADS)

Nawrot, Radosław; Kulisz, Józef; Kania, Dariusz

2017-11-01

The paper presents an outline of a simple synthesis method of energy-efficient FSMs. The idea consists in using local clock gating to selectively block the clock signal, if no transition of a state of a memory element is required. The research was dedicated to logic circuits using Programmable Logic Devices as the implementation platform, but the conclusions can be applied to any synchronous circuit. The experimental section reports a comparison of three methods of implementing sequential circuits in PLDs with respect to clock distribution: the classical fully synchronous structure, the structure exploiting the Enable Clock inputs of memory elements, and the structure using clock gating. The results show that the approach based on clock gating is the most efficient one, and it leads to significant reduction of dynamic power consumed by the FSM.

Metal contact engineering and registration-free fabrication of complementary metal-oxide semiconductor integrated circuits using aligned carbon nanotubes.

PubMed

Wang, Chuan; Ryu, Koungmin; Badmaev, Alexander; Zhang, Jialu; Zhou, Chongwu

2011-02-22

Complementary metal-oxide semiconductor (CMOS) operation is very desirable for logic circuit applications as it offers rail-to-rail swing, larger noise margin, and small static power consumption. However, it remains to be a challenging task for nanotube-based devices. Here in this paper, we report our progress on metal contact engineering for n-type nanotube transistors and CMOS integrated circuits using aligned carbon nanotubes. By using Pd as source/drain contacts for p-type transistors, small work function metal Gd as source/drain contacts for n-type transistors, and evaporated SiO(2) as a passivation layer, we have achieved n-type transistor, PN diode, and integrated CMOS inverter with an air-stable operation. Compared with other nanotube n-doping techniques, such as potassium doping, PEI doping, hydrazine doping, etc., using low work function metal contacts for n-type nanotube devices is not only air stable but also integrated circuit fabrication compatible. Moreover, our aligned nanotube platform for CMOS integrated circuits shows significant advantage over the previously reported individual nanotube platforms with respect to scalability and reproducibility and suggests a practical and realistic approach for nanotube-based CMOS integrated circuit applications.

Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

PubMed

Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

2015-09-02

In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

Sequential power-up circuit

DOEpatents

Kronberg, James W.

1992-01-01

A sequential power-up circuit for starting several electrical load elements in series to avoid excessive current surge, comprising a voltage ramp generator and a set of voltage comparators, each comparator having a different reference voltage and interfacing with a switch that is capable of turning on one of the load elements. As the voltage rises, it passes the reference voltages one at a time and causes the switch corresponding to that voltage to turn on its load element. The ramp is turned on and off by a single switch or by a logic-level electrical signal. The ramp rate for turning on the load element is relatively slow and the rate for turning the elements off is relatively fast. Optionally, the duration of each interval of time between the turning on of the load elements is programmable.

Characterization of human passive muscles for impact loads using genetic algorithm and inverse finite element methods.

PubMed

Chawla, A; Mukherjee, S; Karthikeyan, B

2009-02-01

The objective of this study is to identify the dynamic material properties of human passive muscle tissues for the strain rates relevant to automobile crashes. A novel methodology involving genetic algorithm (GA) and finite element method is implemented to estimate the material parameters by inverse mapping the impact test data. Isolated unconfined impact tests for average strain rates ranging from 136 s(-1) to 262 s(-1) are performed on muscle tissues. Passive muscle tissues are modelled as isotropic, linear and viscoelastic material using three-element Zener model available in PAMCRASH(TM) explicit finite element software. In the GA based identification process, fitness values are calculated by comparing the estimated finite element forces with the measured experimental forces. Linear viscoelastic material parameters (bulk modulus, short term shear modulus and long term shear modulus) are thus identified at strain rates 136 s(-1), 183 s(-1) and 262 s(-1) for modelling muscles. Extracted optimal parameters from this study are comparable with reported parameters in literature. Bulk modulus and short term shear modulus are found to be more influential in predicting the stress-strain response than long term shear modulus for the considered strain rates. Variations within the set of parameters identified at different strain rates indicate the need for new or improved material model, which is capable of capturing the strain rate dependency of passive muscle response with single set of material parameters for wide range of strain rates.

Internal viscoelastic loading in cat papillary muscle.

PubMed Central

Chiu, Y L; Ballou, E W; Ford, L E

1982-01-01

The passive mechanical properties of myocardium were defined by measuring force responses to rapid length ramps applied to unstimulated cat papillary muscles. The immediate force changes following these ramps recovered partially to their initial value, suggesting a series combination of viscous element and spring. Because the stretched muscle can bear force at rest, the viscous element must be in parallel with an additional spring. The instantaneous extension-force curves measured at different lengths were nonlinear, and could be made to superimpose by a simple horizontal shift. This finding suggests that the same spring was being measured at each length, and that this spring was in series with both the viscous element and its parallel spring (Voigt configuration), so that the parallel spring is held nearly rigid by the viscous element during rapid steps. The series spring in the passive muscle could account for most of the series elastic recoil in the active muscle, suggesting that the same spring is in series with both the contractile elements and the viscous element. It is postulated that the viscous element might be coupled to the contractile elements by a compliance, so that the load imposed on the contractile elements by the passive structures is viscoelastic rather than purely viscous. Such a viscoelastic load would give the muscle a length-independent, early diastolic restoring force. The possibility is discussed that the length-independent restoring force would allow some of the energy liberated during active shortening to be stored and released during relaxation. Images FIGURE 7 FIGURE 8 PMID:7171707

2.5 Gbit/s Optical Receiver Front-End Circuit with High Sensitivity and Wide Dynamic Range

NASA Astrophysics Data System (ADS)

Zhu, Tiezhu; Mo, Taishan; Ye, Tianchun

2017-12-01

An optical receiver front-end circuit is designed for passive optical network and fabricated in a 0.18 um CMOS technology. The whole circuit consists of a transimpedance amplifier (TIA), a single-ended to differential amplifier and an output driver. The TIA employs a cascode stage as the input stage and auxiliary amplifier to reduce the miller effect. Current injecting technique is employed to enlarge the input transistor's transconductance, optimize the noise performance and overcome the lack of voltage headroom. To achieve a wide dynamic range, an automatic gain control circuit with self-adaptive function is proposed. Experiment results show an optical sensitivity of -28 dBm for a bit error rate of 10-10 at 2.5 Gbit/s and a maxim input optical power of 2 dBm using an external photodiode. The chip occupies an area of 1×0.9 mm2 and consumes around 30 mW from single 1.8 V supply. The front-end circuit can be used in various optical receivers.

Platinum-Resistor Differential Temperature Sensor

NASA Technical Reports Server (NTRS)

Kolbly, R. B.; Britcliffe, M. J.

1985-01-01

Platinum resistance elements used in bridge circuit for measuring temperature difference between two flowing liquids. Temperature errors with circuit are less than 0.01 degrees C over range of 100 degrees C.

Stripline feed for a microstrip array of patch elements with teardrop shaped probes

NASA Technical Reports Server (NTRS)

Huang, John (Inventor)

1990-01-01

A circularly polarized microstrip array antenna utilizing a honeycomb substrate made of dielectric material to support on one side the microstrip patch elements in an array, and on the other side a stripline circuit for feeding the patch elements in subarray groups of four with angular orientation and phase for producing circularly polarized radiation, preferably at a 0.degree., 90.degree., 180.degree. and 270.degree. relationship. The probe used for coupling each feed point in the stripline circuit to a microstrip patch element is teardrop shaped in order to introduce capacitance between the coupling probe and the metal sheet of the stripline circuit that serves as an antenna ground plane. The capacitance thus introduced tunes out inductance of the probe. The shape of the teardrop probe is not critical. The probe capacitance required is controlled by the maximum diameter for the teardrop shaped probe, which can be empirically determined for the operating frequency. An aluminum baffle around each subarray blocks out surface waves between subarrays.

Microwave Photon Detector in Circuit QED

NASA Astrophysics Data System (ADS)

Garcia-Ripoll, Juan Jose; Romero, Guillermo; Solano, Enrique

2009-03-01

In this work we propose a design for a microwave photodetector based on elements from circuit QED such as the ones used in qubit designs. Our proposal consists on a microwave guide in which we embed circuital elements that can absorb photons and irreversibly change state. These incoherent absorption processes constitute the measurement itself. We first model this design using a general master equation for the propagating photons and the absorbing elements. We find that the detection efficiency for a single absorber is limited to 50%, and that this efficiency can be quickly increased by adding more elements with a moderate separation, obtaining 80% and 90% for two and three absorbers. Our abstract design has at least one possible implementation in which the absorbers are current biased Josephson junction. We demonstrate that the coupling between the guide and the junctions is strong enough, irrespectively of the microwave guide size, and derivate realistic parameters for high fidelity operation with current experiments. Patent pending No. 200802933, Oficina Espanola de Patentes y Marcas, 17/10/2008.

Standardization of Schwarz-Christoffel transformation for engineering design of semiconductor and hybrid integrated-circuit elements

NASA Astrophysics Data System (ADS)

Yashin, A. A.

1985-04-01

A semiconductor or hybrid structure into a calculable two-dimensional region mapped by the Schwarz-Christoffel transformation and a universal algorithm can be constructed on the basis of Maxwell's electro-magnetic-thermal similarity principle for engineering design of integrated-circuit elements. The design procedure involves conformal mapping of the original region into a polygon and then the latter into a rectangle with uniform field distribution, where conductances and capacitances are calculated, using tabulated standard mapping functions. Subsequent synthesis of a device requires inverse conformal mapping. Devices adaptable as integrated-circuit elements are high-resistance film resistors with periodic serration, distributed-resistance film attenuators with high transformation ratio, coplanar microstrip lines, bipolar transistors, directional couplers with distributed coupling to microstrip lines for microwave bulk devices, and quasirregular smooth matching transitions from asymmetric to coplanar microstrip lines.

A novel analytical description of periodic volume coil geometries in MRI

NASA Astrophysics Data System (ADS)

Koh, D.; Felder, J.; Shah, N. J.

2018-03-01

MRI volume coils can be represented by equivalent lumped element circuits and for a variety of these circuit configurations analytical design equations have been presented. The unification of several volume coil topologies results in a two-dimensional gridded equivalent lumped element circuit which compromises the birdcage resonator, its multiple endring derivative but also novel structures like the capacitive coupled ring resonator. The theory section analyzes a general two-dimensional circuit by noting that its current distribution can be decomposed into a longitudinal and an azimuthal dependency. This can be exploited to compare the current distribution with a transfer function of filter circuits along one direction. The resonances of the transfer function coincide with the resonance of the volume resonator and the simple analytical solution can be used as a design equation. The proposed framework is verified experimentally against a novel capacitive coupled ring structure which was derived from the general circuit formulation and is proven to exhibit a dominant homogeneous mode. In conclusion, a unified analytical framework is presented that allows determining the resonance frequency of any volume resonator that can be represented by a two dimensional meshed equivalent circuit.

Determining distinct circuit in complete graphs using permutation

NASA Astrophysics Data System (ADS)

Karim, Sharmila; Ibrahim, Haslinda; Darus, Maizon Mohd

2017-11-01

A Half Butterfly Method (HBM) is a method introduced to construct the distinct circuits in complete graphs where used the concept of isomorphism. The Half Butterfly Method was applied in the field of combinatorics such as in listing permutations of n elements. However the method of determining distinct circuit using HBM for n > 4 is become tedious. Thus, in this paper, we present the method of generating distinct circuit using permutation.

Apparatus and Method for Focusing a Light Beam in a Three-Dimensional Recording Medium by a Dynamic Holographic Device

NASA Technical Reports Server (NTRS)

Juday, Richard D. (Inventor)

1998-01-01

An apparatus is disclosed for reading and/or writing information or to from an optical recording medium having a plurality of information storage layers. The apparatus includes a dynamic holographic optical element configured to focus light on the optical recording medium. a control circuit arranged to supply a drive signal to the holographic optical element, and a storage device in communication with the control circuit and storing at least a first drive signal and a second drive signal. The holographic optical element focusses light on a first one of the plurality of information storage layers when driven by the first drive signal on a second one of the plurality of information storage layers when driven by the second drive signal. An optical switch is also disclosed for connecting at least one light source in a source array to at least one light receiver in a receiver array. The switch includes a dynamic holographic optical element configured to receive light from the source array and to transmit light to the receiver array, a control circuit arranged to supply a drive signal to the holographic optical element, and a storage device in communication with the control circuit and storing at least a first drive signal and a second drive signal. The holographic optical element connects a first light source in the source array to a first light receiver in the receiver array when driven by the first drive signal and the holographic optical element connects the first light source with the first light receiver and a second light receiver when driven by the second drive signal.

Enhancing Efficiency of Perovskite Solar Cells via Surface Passivation with Graphene Oxide Interlayer.

PubMed

Li, Hao; Tao, Leiming; Huang, Feihong; Sun, Qiang; Zhao, Xiaojuan; Han, Junbo; Shen, Yan; Wang, Mingkui

2017-11-08

Perovskite solar cells have been demonstrated as promising low-cost and highly efficient next-generation solar cells. Enhancing V OC by minimization the interfacial recombination kinetics can further improve device performance. In this work, we for the first time reported on surface passivation of perovskite layers with chemical modified graphene oxides, which act as efficient interlayer to reduce interfacial recombination and enhance hole extraction as well. Our modeling points out that the passivation effect mainly comes from the interaction between functional group (4-fluorophenyl) and under-coordinated Pb ions. The resulting perovskite solar cells achieved high efficient power conversion efficiency of 18.75% with enhanced high open circuit V OC of 1.11 V. Ultrafast spectroscopy, photovoltage/photocurrent transient decay, and electronic impedance spectroscopy characterizations reveal the effective passivation effect and the energy loss mechanism. This work sheds light on the importance of interfacial engineering on the surface of perovskite layers and provides possible ways to improve device efficiency.

Monolithic crystalline cladding microstructures for efficient light guiding and beam manipulation in passive and active regimes.

PubMed

Jia, Yuechen; Cheng, Chen; Vázquez de Aldana, Javier R; Castillo, Gabriel R; Rabes, Blanca del Rosal; Tan, Yang; Jaque, Daniel; Chen, Feng

2014-08-07

Miniature laser sources with on-demand beam features are desirable devices for a broad range of photonic applications. Lasing based on direct-pump of miniaturized waveguiding active structures offers a low-cost but intriguing solution for compact light-emitting devices. In this work, we demonstrate a novel family of three dimensional (3D) photonic microstructures monolithically integrated in a Nd:YAG laser crystal wafer. They are produced by the femtosecond laser writing, capable of simultaneous light waveguiding and beam manipulation. In these guiding systems, tailoring of laser modes by both passive/active beam splitting and ring-shaped transformation are achieved by an appropriate design of refractive index patterns. Integration of graphene thin-layer as saturable absorber in the 3D laser structures allows for efficient passive Q-switching of tailored laser radiations which may enable miniature waveguiding lasers for broader applications. Our results pave a way to construct complex integrated passive and active laser circuits in dielectric crystals by using femtosecond laser written monolithic photonic chips.

Dual Electrolytic Plasma Processing for Steel Surface Cleaning and Passivation

NASA Astrophysics Data System (ADS)

Yang, L.; Zhang, P.; Shi, J.; Liang, J.; Tian, W. B.; Zhang, Y. M.; Sun, Z. M.

2017-10-01

To remove the rust on rebars and passivate the fresh surfaces, electrodes reversing electrolytic plasma processing (EPP) was proposed and conducted in a 10 wt.% Na2CO3 aqueous solution. The morphology and the composition of the surface were investigated by SEM and XPS. Experimental results show that the rust on the surface was removed effectively by cathode EPP, and a passive film containing Cr2O3 was achieved by the succeeding anode EPP treatment, by a simple operation of reversing the bias. The corrosion resistance was evaluated in a 3.5 wt.% NaCl aqueous solution using an electrochemical workstation. In comparison, the corrosion resistance was improved by the succeeding anode EPP treatment, which is evidenced by a positive shift of the open-circuit potential, an increase in the electrochemical impedance representing the inner layer by 76.8% and the decrease in the corrosion current density by 49.6%. This is an effective and environment-friendly technique to clean and passivate rebars and similar steel materials.

Gigahertz Electromagnetic Structures via Direct Ink Writing for Radio-Frequency Oscillator and Transmitter Applications.

PubMed

Zhou, Nanjia; Liu, Chengye; Lewis, Jennifer A; Ham, Donhee

2017-04-01

Radio-frequency (RF) electronics, which combine passive electromagnetic devices and active transistors to generate and process gigahertz (GHz) signals, provide a critical basis of ever-pervasive wireless networks. While transistors are best realized by top-down fabrication, relatively larger electromagnetic passives are within the reach of printing techniques. Here, direct writing of viscoelastic silver-nanoparticle inks is used to produce a broad array of RF passives operating up to 45 GHz. These include lumped devices such as inductors and capacitors, and wave-based devices such as transmission lines, their resonant networks, and antennas. Moreover, to demonstrate the utility of these printed RF passive structures in active RF electronic circuits, they are combined with discrete transistors to fabricate GHz self-sustained oscillators and synchronized oscillator arrays that provide RF references, and wireless transmitters clocked by the oscillators. This work demonstrates the synergy of direct ink writing and RF electronics for wireless applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Connector and electronic circuit assembly for improved wet insulation resistance

DOEpatents

Reese, Jason A.; Teli, Samar R.; Keenihan, James R.; Langmaid, Joseph A.; Maak, Kevin D.; Mills, Michael E.; Plum, Timothy C.; Ramesh, Narayan

2016-07-19

The present invention is premised upon a connector and electronic circuit assembly (130) at least partially encased in a polymeric frame (200). The assembly including at least: a connector housing (230); at least one electrical connector (330); at least one electronic circuit component (430); and at least one barrier element (530).

State-variable analysis of non-linear circuits with a desk computer

NASA Technical Reports Server (NTRS)

Cohen, E.

1981-01-01

State variable analysis was used to analyze the transient performance of non-linear circuits on a desk top computer. The non-linearities considered were not restricted to any circuit element. All that is required for analysis is the relationship defining each non-linearity be known in terms of points on a curve.

Silicon Carbide Integrated Circuit Chip

NASA Image and Video Library

2015-02-17

A multilevel interconnect silicon carbide integrated circuit chip with co-fired ceramic package and circuit board recently developed at the NASA GRC Smart Sensors and Electronics Systems Branch for high temperature applications. High temperature silicon carbide electronics and compatible packaging technologies are elements of instrumentation for aerospace engine control and long term inner-solar planet explorations.

Research on burnout fault of moulded case circuit breaker based on finite element simulation

NASA Astrophysics Data System (ADS)

Xue, Yang; Chang, Shuai; Zhang, Penghe; Xu, Yinghui; Peng, Chuning; Shi, Erwei

2017-09-01

In the failure event of molded case circuit breaker, overheating of the molded case near the wiring terminal has a very important proportion. The burnout fault has become an important factor restricting the development of molded case circuit breaker. This paper uses the finite element simulation software to establish the model of molded case circuit breaker by coupling multi-physics field. This model can simulate the operation and study the law of the temperature distribution. The simulation results show that the temperature near the wiring terminal, especially the incoming side of the live wire, of the molded case circuit breaker is much higher than that of the other areas. The steady-state and transient simulation results show that the temperature at the wiring terminals is abnormally increased by increasing the contact resistance of the wiring terminals. This is consistent with the frequent occurrence of burnout of the molded case in this area. Therefore, this paper holds that the burnout failure of the molded case circuit breaker is mainly caused by the abnormal increase of the contact resistance of the wiring terminal.

An advanced SEU tolerant latch based on error detection

NASA Astrophysics Data System (ADS)

Xu, Hui; Zhu, Jianwei; Lu, Xiaoping; Li, Jingzhao

2018-05-01

This paper proposes a latch that can mitigate SEUs via an error detection circuit. The error detection circuit is hardened by a C-element and a stacked PMOS. In the hold state, a particle strikes the latch or the error detection circuit may cause a fault logic state of the circuit. The error detection circuit can detect the upset node in the latch and the fault output will be corrected. The upset node in the error detection circuit can be corrected by the C-element. The power dissipation and propagation delay of the proposed latch are analyzed by HSPICE simulations. The proposed latch consumes about 77.5% less energy and 33.1% less propagation delay than the triple modular redundancy (TMR) latch. Simulation results demonstrate that the proposed latch can mitigate SEU effectively. Project supported by the National Natural Science Foundation of China (Nos. 61404001, 61306046), the Anhui Province University Natural Science Research Major Project (No. KJ2014ZD12), the Huainan Science and Technology Program (No. 2013A4011), and the National Natural Science Foundation of China (No. 61371025).

An Improved Zero Potential Circuit for Readout of a Two-Dimensional Resistive Sensor Array

PubMed Central

Wu, Jian-Feng; Wang, Feng; Wang, Qi; Li, Jian-Qing; Song, Ai-Guo

2016-01-01

With one operational amplifier (op-amp) in negative feedback, the traditional zero potential circuit could access one element in the two-dimensional (2-D) resistive sensor array with the shared row-column fashion but it suffered from the crosstalk problem for the non-scanned elements’ bypass currents, which were injected into array’s non-scanned electrodes from zero potential. Firstly, for suppressing the crosstalk problem, we designed a novel improved zero potential circuit with one more op-amp in negative feedback to sample the total bypass current and calculate the precision resistance of the element being tested (EBT) with it. The improved setting non-scanned-electrode zero potential circuit (S-NSE-ZPC) was given as an example for analyzing and verifying the performance of the improved zero potential circuit. Secondly, in the S-NSE-ZPC and the improved S-NSE-ZPC, the effects of different parameters of the resistive sensor arrays and their readout circuits on the EBT’s measurement accuracy were simulated with the NI Multisim 12. Thirdly, part features of the improved circuit were verified with the experiments of a prototype circuit. Followed, the results were discussed and the conclusions were given. The experiment results show that the improved circuit, though it requires one more op-amp, one more resistor and one more sampling channel, can access the EBT in the 2-D resistive sensor array more accurately. PMID:27929410

Impedance characterization of AlGaN/GaN Schottky diodes with metal contacts

NASA Astrophysics Data System (ADS)

Donahue, M.; Lübbers, B.; Kittler, M.; Mai, P.; Schober, A.

2013-04-01

To obtain detailed information on structural and electrical properties of AlGaN/GaN Schottky diodes and to determine an appropriate equivalent circuit, impedance spectroscopy and impedance voltage profiling are employed over a frequency range of 1 MHz-1 Hz. In contrast to the commonly assumed parallel connection of capacitive and resistive elements, an equivalent circuit is derived from impedance spectra which utilizes the constant phase element and accounts for frequency dispersion and trap states. The trap density is estimated and is in good agreement with the literature values. The resulting reduced equivalent circuit consists of a capacitor and resistor connected in series.

In-circuit-measurement of parasitic elements in high gain high bandwidth low noise transimpedance amplifiers.

PubMed

Cochems, P; Kirk, A; Zimmermann, S

2014-12-01

Parasitic elements play an important role in the development of every high performance circuit. In the case of high gain, high bandwidth transimpedance amplifiers, the most important parasitic elements are parasitic capacitances at the input and in the feedback path, which significantly influence the stability, the frequency response, and the noise of the amplifier. As these parasitic capacitances range from a few picofarads down to only a few femtofarads, it is nearly impossible to measure them accurately using traditional LCR meters. Unfortunately, they also cannot be easily determined from the transfer function of the transimpedance amplifier, as it contains several overlapping effects and its measurement is only possible when the circuit is already stable. Therefore, we developed an in-circuit measurement method utilizing minimal modifications to the input stage in order to measure its parasitic capacitances directly and with unconditional stability. Furthermore, using the data acquired with this measurement technique, we both proposed a model for the complicated frequency response of high value thick film resistors as they are used in high gain transimpedance amplifiers and optimized our transimpedance amplifier design.

49 CFR 236.526 - Roadway element not functioning properly.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Roadway element not functioning properly. 236.526... element not functioning properly. When a roadway element except track circuit of automatic train stop... roadway element shall be caused manually to display its most restrictive aspect until such element has...

49 CFR 236.526 - Roadway element not functioning properly.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Roadway element not functioning properly. 236.526... element not functioning properly. When a roadway element except track circuit of automatic train stop... roadway element shall be caused manually to display its most restrictive aspect until such element has...

49 CFR 236.526 - Roadway element not functioning properly.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Roadway element not functioning properly. 236.526... element not functioning properly. When a roadway element except track circuit of automatic train stop... roadway element shall be caused manually to display its most restrictive aspect until such element has...

Scaling up digital circuit computation with DNA strand displacement cascades.

PubMed

Qian, Lulu; Winfree, Erik

2011-06-03

To construct sophisticated biochemical circuits from scratch, one needs to understand how simple the building blocks can be and how robustly such circuits can scale up. Using a simple DNA reaction mechanism based on a reversible strand displacement process, we experimentally demonstrated several digital logic circuits, culminating in a four-bit square-root circuit that comprises 130 DNA strands. These multilayer circuits include thresholding and catalysis within every logical operation to perform digital signal restoration, which enables fast and reliable function in large circuits with roughly constant switching time and linear signal propagation delays. The design naturally incorporates other crucial elements for large-scale circuitry, such as general debugging tools, parallel circuit preparation, and an abstraction hierarchy supported by an automated circuit compiler.

A passive chevron replicator

NASA Technical Reports Server (NTRS)

Oeffinger, T. R.; Tocci, L. R.

1977-01-01

Instrument design provides replicate function between device storage area and guardrail detector in order that nondestructive read-out of memory can be achieved. Use of guardrail detectors in magnetic domain (bubble) circuits is proposed method of increasing detector signal output by increasing detector size without dedicating an excessive amount of device chip area to detector portion.

MMIC technology for advanced space communications systems

NASA Astrophysics Data System (ADS)

Downey, A. N.; Connolly, D. J.; Anzic, G.

The current NASA program for 20 and 30 GHz monolithic microwave integrated circuit (MMIC) technology is reviewed. The advantages of MMIC are discussed. Millimeter wavelength MMIC applications and technology for communications systems are discussed. Passive and active MMIC compatible components for millimeter wavelength applications are investigated. The cost of a millimeter wavelength MMIC's is projected.

MMIC technology for advanced space communications systems

NASA Technical Reports Server (NTRS)

Downey, A. N.; Connolly, D. J.; Anzic, G.

1984-01-01

The current NASA program for 20 and 30 GHz monolithic microwave integrated circuit (MMIC) technology is reviewed. The advantages of MMIC are discussed. Millimeter wavelength MMIC applications and technology for communications systems are discussed. Passive and active MMIC compatible components for millimeter wavelength applications are investigated. The cost of a millimeter wavelength MMIC's is projected.

Capturing Spatial Variability of Biogeochemical Mass Exchanges and Reaction Rates in Wetland Water and Soil through Model Compartmentalization

EPA Science Inventory

A common phenomenon observed in natural and constructed wetlands is short-circuiting of flow and formation of stagnant zones that are only indirectly connected with the incoming water. Biogeochemistry of passive areas is potentially much different than that of active zones. In ...

Power Conditioning for MEMS-Based Waste Vibrational Energy Harvester

DTIC Science & Technology

2015-06-01

circuits ...........................................................................................18 Figure 18. Full-wave passive MOSFET rectifier...ABBREVIATIONS AC Alternative Current AlN Aluminum Nitride DC Direct Current LIA Lock-In Amplifier MEMS Microelectromechanical Systems MOSFET ...efficiency is achieved when input voltage is over 2–3 V [14]. Using metal-oxide-semiconductor field-effect transistors ( MOSFETs ) in a rectifier instead of

Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting

PubMed Central

Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

2017-01-01

For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from −40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions. PMID:28282910

Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip

NASA Astrophysics Data System (ADS)

Nakane, R.; Shuto, Y.; Sukegawa, H.; Wen, Z. C.; Yamamoto, S.; Mitani, S.; Tanaka, M.; Inomata, K.; Sugahara, S.

2014-12-01

We demonstrate monolithic integration of pseudo-spin-MOSFETs (PS-MOSFETs) using vendor-made MOSFETs fabricated in a low-cost multi-project wafer (MPW) product and lab-made magnetic tunnel junctions (MTJs) formed on the topmost passivation film of the MPW chip. The tunneling magnetoresistance (TMR) ratio of the fabricated MTJs strongly depends on the surface roughness of the passivation film. Nevertheless, after the chip surface was atomically flattened by SiO2 deposition on it and successive chemical-mechanical polish (CMP) process for the surface, the fabricated MTJs on the chip exhibits a sufficiently large TMR ratio (>140%) adaptable to the PS-MOSFET application. The implemented PS-MOSFETs show clear modulation of the output current controlled by the magnetization configuration of the MTJs, and a maximum magnetocurrent ratio of 90% is achieved. These magnetocurrent behaviour is quantitatively consistent with those predicted by HSPICE simulations. The developed integration technique using a MPW CMOS chip would also be applied to monolithic integration of CMOS devices/circuits and other various functional devices/materials, which would open the door for exploring CMOS-based new functional hybrid circuits.

Passive hand movements disrupt adults' counting strategies.

PubMed

Imbo, Ineke; Vandierendonck, André; Fias, Wim

2011-01-01

In the present study, we experimentally tested the role of hand motor circuits in simple-arithmetic strategies. Educated adults solved simple additions (e.g., 8 + 3) or simple subtractions (e.g., 11 - 3) while they were required to retrieve the answer from long-term memory (e.g., knowing that 8 + 3 = 11), to transform the problem by making an intermediate step (e.g., 8 + 3 = 8 + 2 + 1 = 10 + 1 = 11) or to count one-by-one (e.g., 8 + 3 = 8…9…10…11). During the process of solving the arithmetic problems, the experimenter did or did not move the participants' hand on a four-point matrix. The results show that passive hand movements disrupted the counting strategy while leaving the other strategies unaffected. This pattern of results is in agreement with a procedural account, showing that the involvement of hand motor circuits in adults' mathematical abilities is reminiscent of finger counting during childhood.

Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting.

PubMed

Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

2017-03-09

For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from -40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions.

Transient analysis of ”2 inch Direct Vessel Injection line break” in SPES-2 facility by using TRACE code

NASA Astrophysics Data System (ADS)

D'Amico, S.; Lombardo, C.; Moscato, I.; Polidori, M.; Vella, G.

2015-11-01

In the past few decades a lot of theoretical and experimental researches have been done to understand the physical phenomena characterizing nuclear accidents. In particular, after the Three Miles Island accident, several reactors have been designed to handle successfully LOCA events. This paper presents a comparison between experimental and numerical results obtained for the “2 inch Direct Vessel Injection line break” in SPES-2. This facility is an integral test facility built in Piacenza at the SIET laboratories and simulating the primary circuit, the relevant parts of the secondary circuits and the passive safety systems typical of the AP600 nuclear power plant. The numerical analysis here presented was performed by using TRACE and CATHARE thermal-hydraulic codes with the purpose of evaluating their prediction capability. The main results show that the TRACE model well predicts the overall behaviour of the plant during the transient, in particular it is able to simulate the principal thermal-hydraulic phenomena related to all passive safety systems. The performance of the presented CATHARE noding has suggested some possible improvements of the model.

Interior design for passive solar homes

NASA Astrophysics Data System (ADS)

Breen, J. C.

1981-07-01

The increasing emphasis on refinement of passive solar systems brought recognition to interior design as an integral part of passive solar architecture. Interior design can be used as a finetuning tool minimizing many of the problems associated with passive solar energy use in residential buildings. In addition, treatment of interior space in solar model homes may be a prime factor in determining sales success. A new style of interior design is evolving in response to changes in building from incorporating passive solar design features. The psychology behind passive solar architecture is reflected in interiors, and selection of interior components increasingly depends on the functional suitably of various interior elements.

Design principles for elementary gene circuits: Elements, methods, and examples

NASA Astrophysics Data System (ADS)

Savageau, Michael A.

2001-03-01

The control of gene expression involves complex circuits that exhibit enormous variation in design. For years the most convenient explanation for these variations was historical accident. According to this view, evolution is a haphazard process in which many different designs are generated by chance; there are many ways to accomplish the same thing, and so no further meaning can be attached to such different but equivalent designs. In recent years a more satisfying explanation based on design principles has been found for at least certain aspects of gene circuitry. By design principle we mean a rule that characterizes some biological feature exhibited by a class of systems such that discovery of the rule allows one not only to understand known instances but also to predict new instances within the class. The central importance of gene regulation in modern molecular biology provides strong motivation to search for more of these underlying design principles. The search is in its infancy and there are undoubtedly many design principles that remain to be discovered. The focus of this three-part review will be the class of elementary gene circuits in bacteria. The first part reviews several elements of design that enter into the characterization of elementary gene circuits in prokaryotic organisms. Each of these elements exhibits a variety of realizations whose meaning is generally unclear. The second part reviews mathematical methods used to represent, analyze, and compare alternative designs. Emphasis is placed on particular methods that have been used successfully to identify design principles for elementary gene circuits. The third part reviews four design principles that make specific predictions regarding (1) two alternative modes of gene control, (2) three patterns of coupling gene expression in elementary circuits, (3) two types of switches in inducible gene circuits, and (4) the realizability of alternative gene circuits and their response to phased environmental cues. In each case, the predictions are supported by experimental evidence. These results are important for understanding the function, design, and evolution of elementary gene circuits.

Integration of quantum cascade lasers and passive waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Montoya, Juan, E-mail: juan.montoya@ll.mit.edu; Wang, Christine; Goyal, Anish

2015-07-20

We report on monolithic integration of active quantum cascade laser (QCL) materials with passive waveguides formed by using proton implantation. Proton implantation reduces the electron concentration in the QCL layers by creating deep levels that trap carriers. This strongly reduces the intersubband absorption and the free-carrier absorption in the gain region and surrounding layers, thus significantly reducing optical loss. We have measured loss as low as α = 0.33 cm{sup −1} in λ = 9.6 μm wavelength proton-implanted QCL material. We have also demonstrated lasing in active-passive integrated waveguides. This simple integration technique is anticipated to enable low-cost fabrication in infrared photonic integrated circuits in themore » mid-infrared (λ ∼ 3–16 μm)« less

Superconducting shielded core reactor with reduced AC losses

DOEpatents

Cha, Yung S.; Hull, John R.

2006-04-04

A superconducting shielded core reactor (SSCR) operates as a passive device for limiting excessive AC current in a circuit operating at a high power level under a fault condition such as shorting. The SSCR includes a ferromagnetic core which may be either closed or open (with an air gap) and extends into and through a superconducting tube or superconducting rings arranged in a stacked array. First and second series connected copper coils each disposed about a portion of the iron core are connected to the circuit to be protected and are respectively wound inside and outside of the superconducting tube or rings. A large impedance is inserted into the circuit by the core when the shielding capability of the superconducting arrangement is exceeded by the applied magnetic field generated by the two coils under a fault condition to limit the AC current in the circuit. The proposed SSCR also affords reduced AC loss compared to conventional SSCRs under continuous normal operation.

Additive manufacturing of hybrid circuits

DOE PAGES

Bell, Nelson S.; Sarobol, Pylin; Cook, Adam; ...

2016-03-26

There is a rising interest in developing functional electronics using additively manufactured components. Considerations in materials selection and pathways to forming hybrid circuits and devices must demonstrate useful electronic function; must enable integration; and must complement the complex shape, low cost, high volume, and high functionality of structural but generally electronically passive additively manufactured components. This article reviews several emerging technologies being used in industry and research/development to provide integration advantages of fabricating multilayer hybrid circuits or devices. First, we review a maskless, noncontact, direct write (DW) technology that excels in the deposition of metallic colloid inks for electrical interconnects.more » Second, we review a complementary technology, aerosol deposition (AD), which excels in the deposition of metallic and ceramic powder as consolidated, thick conformal coatings and is additionally patternable through masking. As a result, we show examples of hybrid circuits/devices integrated beyond 2-D planes, using combinations of DW or AD processes and conventional, established processes.« less

Summary of Optimization Techniques That Can Be Applied to Suspension System Design

DOT National Transportation Integrated Search

1973-03-01

Summaries are presented of the analytic techniques available for three levitated vehicle suspension optimization problems: optimization of passive elements for fixed configuration; optimization of a free passive configuration; optimization of a free ...

High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

PubMed

Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

2018-06-12

Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

Damage indication in smart structures using modal effective electromechanical coupling coefficients

NASA Astrophysics Data System (ADS)

Al-Ajmi, M. A.; Benjeddou, A.

2008-06-01

This work explores the use, in structural health monitoring, of the so-called modal effective electromechanical coupling coefficient (EMCC) as a damage indicator for structures with failures such as cracks. For this purpose, a discrete layered finite element (FE) model for smart beams is proposed and applied to short-circuit (SC) and open-circuit (OC) modal analyses of healthy and damaged (cracked) cantilever beams with symmetrically surface-bonded piezoelectric patches. Focus is made here on enhancing the electrical behavior modeling by introducing a quadratic bubble function in the electric potential through-the-thickness approximation. Therefore, the corresponding higher-order potential (HOP) degree of freedom is condensed at the ply level, leading to a passive stiffening effect (SE) similar to the so-called higher-order induced potential (HIP); then the physical equipotential (EP) electrode effect, often neglected in the piezoelectric FE literature, is here implemented after the electrodes' FE assembly. After its validation against available analytical and experimental results, the proposed piezoelectric FE is used for parametric analyses of SC-based and OC-based EMCC change factors (ECFs) and frequency change factors (FCFs) in terms of the crack depth and position ratios. It was found that the EP effect was more influential on the ECF than the SE. However, for the FCFs, the EP effect was influential only when it is defined from the OC frequencies. Finally, the ECFs were found to be higher than the FCFs, in particular for higher modes.

Hybrid Active/Passive Jet Engine Noise Suppression System

NASA Technical Reports Server (NTRS)

Parente, C. A.; Arcas, N.; Walker, B. E.; Hersh, A. S.; Rice, E. J.

1999-01-01

A novel adaptive segmented liner concept has been developed that employs active control elements to modify the in-duct sound field to enhance the tone-suppressing performance of passive liner elements. This could potentially allow engine designs that inherently produce more tone noise but less broadband noise, or could allow passive liner designs to more optimally address high frequency broadband noise. A proof-of-concept validation program was undertaken, consisting of the development of an adaptive segmented liner that would maximize attenuation of two radial modes in a circular or annular duct. The liner consisted of a leading active segment with dual annuli of axially spaced active Helmholtz resonators, followed by an optimized passive liner and then an array of sensing microphones. Three successively complex versions of the adaptive liner were constructed and their performances tested relative to the performance of optimized uniform passive and segmented passive liners. The salient results of the tests were: The adaptive segmented liner performed well in a high flow speed model fan inlet environment, was successfully scaled to a high sound frequency and successfully attenuated three radial modes using sensor and active resonator arrays that were designed for a two mode, lower frequency environment.

Design and Performance Analysis of an Intrinsically Safe Ultrasonic Ranging Sensor

PubMed Central

Zhang, Hongjuan; Wang, Yu; Zhang, Xu; Wang, Dong; Jin, Baoquan

2016-01-01

In flammable or explosive environments, an ultrasonic sensor for distance measurement poses an important engineering safety challenge, because the driving circuit uses an intermediate frequency transformer as an impedance transformation element, in which the produced heat or spark is available for ignition. In this paper, an intrinsically safe ultrasonic ranging sensor is designed and implemented. The waterproof piezoelectric transducer with integrated transceiver is chosen as an energy transducing element. Then a novel transducer driving circuit is designed based on an impedance matching method considering safety spark parameters to replace an intermediate frequency transformer. Then, an energy limiting circuit is developed to achieve dual levels of over-voltage and over-current protection. The detail calculation and evaluation are executed and the electrical characteristics are analyzed to verify the intrinsic safety of the driving circuit. Finally, an experimental platform of the ultrasonic ranging sensor system is constructed, which involves short-circuit protection. Experimental results show that the proposed ultrasonic ranging sensor is excellent in both ranging performance and intrinsic safety. PMID:27304958

Design and Performance Analysis of an Intrinsically Safe Ultrasonic Ranging Sensor.

PubMed

Zhang, Hongjuan; Wang, Yu; Zhang, Xu; Wang, Dong; Jin, Baoquan

2016-06-13

In flammable or explosive environments, an ultrasonic sensor for distance measurement poses an important engineering safety challenge, because the driving circuit uses an intermediate frequency transformer as an impedance transformation element, in which the produced heat or spark is available for ignition. In this paper, an intrinsically safe ultrasonic ranging sensor is designed and implemented. The waterproof piezoelectric transducer with integrated transceiver is chosen as an energy transducing element. Then a novel transducer driving circuit is designed based on an impedance matching method considering safety spark parameters to replace an intermediate frequency transformer. Then, an energy limiting circuit is developed to achieve dual levels of over-voltage and over-current protection. The detail calculation and evaluation are executed and the electrical characteristics are analyzed to verify the intrinsic safety of the driving circuit. Finally, an experimental platform of the ultrasonic ranging sensor system is constructed, which involves short-circuit protection. Experimental results show that the proposed ultrasonic ranging sensor is excellent in both ranging performance and intrinsic safety.

Method for maskless lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of thesemore » individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.« less

Maskless lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sweatt, W.C.; Stulen, R.H.

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of thesemore » individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides. 12 figs.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caravelli, Francesco

The dynamics of purely memristive circuits has been shown to depend on a projection operator which expresses the Kirchhoff constraints, is naturally non-local in nature, and does represent the interaction between memristors. In the present paper we show that for the case of planar circuits, for which a meaningful Hamming distance can be defined, the elements of such projector can be bounded by exponentially decreasing functions of the distance. We provide a geometrical interpretation of the projector elements in terms of determinants of Dirichlet Laplacian of the dual circuit. For the case of linearized dynamics of the circuit for whichmore » a solution is known, this can be shown to provide a light cone bound for the interaction between memristors. Furthermore, this result establishes a finite speed of propagation of signals across the network, despite the non-local nature of the system.« less

Radio-over-optical waveguide system-on-wafer for massive delivery capacity 5G MIMO access networks

NASA Astrophysics Data System (ADS)

Binh, Le N.

2017-01-01

Delivering maximum information capacity over MIMO antennae systems beam steering is critical so as to achieve the flexibility via beam steering, maximizing the number of users or community of users in Gb/s rate per user over distributed cloud-based optical-wireless access networks. This paper gives an overview of (i) demands of optical - wireless delivery with high flexibility, especially the beam steering of multi-Tbps information channels to information hungry community of users via virtualized beam steering MIMO antenna systems at the free-license mmW region; (ii) Proposing a novel photonic planar integrated waveguide systems composing several passive and active, passive and amplification photonic devices so as to generate mmW carrier and embedded baseband information channels to feed to antenna elements; (iii) Integration techniques to generate a radio over optical waveguide (RoOW) system-on-wafer (SoW) comprising MIMO planar antenna elements and associate photonic integrated circuits for both up- and down- links; (iv) Challenges encountered in the implementation of the SoW in both wireless and photonic domains; (v) Photonic modulation techniques to achieve maximum transmission capacity per wavelength per MIMO antenna system. (vi) A view on control-feedback systems for fast and accurate generation of phase pattern for MIMO beam steering via a bank of optical phase modulators to mmW carrier phases and their preservation in the converted mmW domain . (vi) The overall operational principles of the novel techniques and technologies based on the coherent mixing of two lightwave channels The entire SoW can be implemented on SOI Si-photonic technology or via hybrid integration. These technological developments and their pros- and cons- will be discussed to achieve 50Tera-bps over the extended 110 channel Cband single mode fiber with mmW centered at 58.6GHz and 7GHz free-license band.

Sequential power-up circuit

DOEpatents

Kronberg, J.W.

1992-06-02

A sequential power-up circuit for starting several electrical load elements in series to avoid excessive current surge, comprising a voltage ramp generator and a set of voltage comparators, each comparator having a different reference voltage and interfacing with a switch that is capable of turning on one of the load elements. As the voltage rises, it passes the reference voltages one at a time and causes the switch corresponding to that voltage to turn on its load element. The ramp is turned on and off by a single switch or by a logic-level electrical signal. The ramp rate for turning on the load element is relatively slow and the rate for turning the elements off is relatively fast. Optionally, the duration of each interval of time between the turning on of the load elements is programmable. 2 figs.

Solid State Technology Branch of NASA Lewis Research Center Second Annual Digest, June 1989 - June 1990

NASA Technical Reports Server (NTRS)

1990-01-01

A collection of papers and presentations authored by the branch between June 1989 and June 1990 is presented. The papers are organized into four sections. Section 1 deals with research in microwave circuits and includes full integrated circuits, the demonstration of optical/RF interfaces, and the evaluation of some hybrid circuitry. Section 2 indicates developments in coplanar waveguides and their use in breadboard circuits. Section 3 addresses high temperature superconductivity and includes: thin film deposition, transport measurement of film characteristics, RF surface resistant measurements, substrate permittivity measurements, measurements of microstrip line characteristics at cryogenic temperatures, patterning of superconducting films, and evaluation of simple passive microstrip circuitry based on YBaCuO films. Section 4 deals with carbon films, silicon carbide, GaAs/AlGaAs, HgCdTe, and other materials.

Break-before-make CMOS inverter for power-efficient delay implementation.

PubMed

Puhan, Janez; Raič, Dušan; Tuma, Tadej; Bűrmen, Árpád

2014-01-01

A modified static CMOS inverter with two inputs and two outputs is proposed to reduce short-circuit current in order to increment delay and reduce power overhead where slow operation is required. The circuit is based on bidirectional delay element connected in series with the PMOS and NMOS switching transistors. It provides differences in the dynamic response so that the direct-path current in the next stage is reduced. The switching transistors are never ON at the same time. Characteristics of various delay element implementations are presented and verified by circuit simulations. Global optimization procedure is used to obtain the most power-efficient transistor sizing. The performance of the modified CMOS inverter chain is compared to standard implementation for various delays. The energy (charge) per delay is reduced up to 40%. The use of the proposed delay element is demonstrated by implementing a low-power delay line and a leading-edge detector cell.

Break-before-Make CMOS Inverter for Power-Efficient Delay Implementation

PubMed Central

Raič, Dušan

2014-01-01

A modified static CMOS inverter with two inputs and two outputs is proposed to reduce short-circuit current in order to increment delay and reduce power overhead where slow operation is required. The circuit is based on bidirectional delay element connected in series with the PMOS and NMOS switching transistors. It provides differences in the dynamic response so that the direct-path current in the next stage is reduced. The switching transistors are never ON at the same time. Characteristics of various delay element implementations are presented and verified by circuit simulations. Global optimization procedure is used to obtain the most power-efficient transistor sizing. The performance of the modified CMOS inverter chain is compared to standard implementation for various delays. The energy (charge) per delay is reduced up to 40%. The use of the proposed delay element is demonstrated by implementing a low-power delay line and a leading-edge detector cell. PMID:25538951

Stable passive optical clock generation in SOA-based fiber lasers.

PubMed

Wang, Jing-Yun; Lin, Kuei-Huei; Chen, Hou-Ren

2015-02-15

Stable optical pulse trains are obtained from 1.3-μm and 1.5-μm semiconductor optical amplifier (SOA)-based fiber lasers using passive optical technology. The waveforms depend on SOA currents, and the repetition rates can be tuned by varying the relative length of sub-cavities. The output pulse trains of these SOA-based fiber lasers are stable against intracavity polarization adjustment and environmental perturbation. The optical clock generation is explained in terms of mode competition, self-synchronization, and SOA saturation. Without resorting to any active modulation circuits or devices, the technology used here is simple and may find various applications in the future.

Acoustic Holographic Rendering with Two-dimensional Metamaterial-based Passive Phased Array

PubMed Central

Xie, Yangbo; Shen, Chen; Wang, Wenqi; Li, Junfei; Suo, Dingjie; Popa, Bogdan-Ioan; Jing, Yun; Cummer, Steven A.

2016-01-01

Acoustic holographic rendering in complete analogy with optical holography are useful for various applications, ranging from multi-focal lensing, multiplexed sensing and synthesizing three-dimensional complex sound fields. Conventional approaches rely on a large number of active transducers and phase shifting circuits. In this paper we show that by using passive metamaterials as subwavelength pixels, holographic rendering can be achieved without cumbersome circuitry and with only a single transducer, thus significantly reducing system complexity. Such metamaterial-based holograms can serve as versatile platforms for various advanced acoustic wave manipulation and signal modulation, leading to new possibilities in acoustic sensing, energy deposition and medical diagnostic imaging. PMID:27739472

Passive quantum error correction of linear optics networks through error averaging

NASA Astrophysics Data System (ADS)

Marshman, Ryan J.; Lund, Austin P.; Rohde, Peter P.; Ralph, Timothy C.

2018-02-01

We propose and investigate a method of error detection and noise correction for bosonic linear networks using a method of unitary averaging. The proposed error averaging does not rely on ancillary photons or control and feedforward correction circuits, remaining entirely passive in its operation. We construct a general mathematical framework for this technique and then give a series of proof of principle examples including numerical analysis. Two methods for the construction of averaging are then compared to determine the most effective manner of implementation and probe the related error thresholds. Finally we discuss some of the potential uses of this scheme.

Automatic ranging circuit for a digital panel meter

DOEpatents

Mueller, Theodore R.; Ross, Harley H.

1976-01-01

This invention relates to a range changing circuit that operates in conjunction with a digital panel meter of fixed sensitivity. The circuit decodes the output of the panel meter and uses that information to change the gain of an input amplifier to the panel meter in order to insure that the maximum number of significant figures is always displayed in the meter. The circuit monitors five conditions in the meter and responds to any of four combinations of these conditions by means of logic elements to carry out the function of the circuit.

Research on the equivalent circuit model of a circular flexural-vibration-research on the equivalent circuit model of a circular flexural-vibration-mode piezoelectric transformer with moderate thickness.

PubMed

Huang, Yihua; Huang, Wenjin; Wang, Qinglei; Su, Xujian

2013-07-01

The equivalent circuit model of a piezoelectric transformer is useful in designing and optimizing the related driving circuits. Based on previous work, an equivalent circuit model for a circular flexural-vibration-mode piezoelectric transformer with moderate thickness is proposed and validated by finite element analysis. The input impedance, voltage gain, and efficiency of the transformer are determined through computation. The basic behaviors of the transformer are shown by numerical results.

Storage of electric and magnetic energy in passive nonreciprocal networks

NASA Technical Reports Server (NTRS)

Smith, W. E.

1969-01-01

Examination of the relation of stored electric and magnetic energy within a system to the terminal behavior of nonreciprocal passive networks shows both similarities and important differences between wholly reciprocal systems and systems containing nonreciprocal elements.

Interfacial Passivation of the p-Doped Hole-Transporting Layer Using General Insulating Polymers for High-Performance Inverted Perovskite Solar Cells.

PubMed

Zhang, Fan; Song, Jun; Hu, Rui; Xiang, Yuren; He, Junjie; Hao, Yuying; Lian, Jiarong; Zhang, Bin; Zeng, Pengju; Qu, Junle

2018-05-01

Organic-inorganic lead halide perovskite solar cells (PVSCs), as a competing technology with traditional inorganic solar cells, have now realized a high power conversion efficiency (PCE) of 22.1%. In PVSCs, interfacial carrier recombination is one of the dominant energy-loss mechanisms, which also results in the simultaneous loss of potential efficiency. In this work, for planar inverted PVSCs, the carrier recombination is dominated by the dopant concentration in the p-doped hole transport layers (HTLs), since the F4-TCNQ dopant induces more charge traps and electronic transmission channels, thus leading to a decrease in open-circuit voltages (V OC ). This issue is efficiently overcome by inserting a thin insulating polymer layer (poly(methyl methacrylate) or polystyrene) as a passivation layer with an appropriate thickness, which allows for increases in the V OC without significantly sacrificing the fill factor. It is believed that the passivation layer attributes to the passivation of interfacial recombination and the suppression of current leakage at the perovskite/HTL interface. By manipulating this interfacial passivation technique, a high PCE of 20.3% is achieved without hysteresis. Consequently, this versatile interfacial passivation methodology is highly useful for further improving the performance of planar inverted PVSCs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tests on Double Layer Metalization

NASA Technical Reports Server (NTRS)

Woo, D. S.

1983-01-01

28 page report describes experiments in fabrication of integrated circuits with double-layer metalization. Double-layer metalization requires much less silicon "real estate" and allows more flexibility in placement of circuit elements than does single-layer metalization.

Electrochemical cell has internal resistive heater element

NASA Technical Reports Server (NTRS)

Colston, E. F.; Ford, F. E.; Hennigan, T. J.

1968-01-01

External source supplies power to electrochemical cells containing internal resistive heater element. Each cell plate is individually contained in its own Pellon bag, enabling the heater element to be arranged in a continuous, parallel circuit.

Corrosivity Sensor for Exposed Pipelines Based on Wireless Energy Transfer

PubMed Central

Lawand, Lydia; Shiryayev, Oleg; Al Handawi, Khalil; Vahdati, Nader; Rostron, Paul

2017-01-01

External corrosion was identified as one of the main causes of pipeline failures worldwide. A solution that addresses the issue of detecting and quantifying corrosivity of environment for application to existing exposed pipelines has been developed. It consists of a sensing array made of an assembly of thin strips of pipeline steel and a circuit that provides a visual sensor reading to the operator. The proposed sensor is passive and does not require a constant power supply. Circuit design was validated through simulations and lab experiments. Accelerated corrosion experiment was conducted to confirm the feasibility of the proposed corrosivity sensor design. PMID:28556805

Dry electrode bio-potential recordings.

PubMed

Gargiulo, Gaetano; Bifulco, Paolo; McEwan, Alistair; Nasehi Tehrani, Joubin; Calvo, Rafael A; Romano, Maria; Ruffo, Mariano; Shephard, Richard; Cesarelli, Mario; Jin, Craig; Mohamed, Armin; van Schaik, André

2010-01-01

As wireless bio-medical long term monitoring moves towards personal monitoring it demands very high input impedance systems capable to extend the reading of bio-signal during the daily activities offering a kind of "stress free", convenient connection, with no need for skin preparation. In particular we highlight the development and broad applications of our own circuits for wearable bio-potential sensor systems enabled by the use of an FET based amplifier circuit with sufficiently high impedance to allow the use of passive dry electrodes which overcome the significant barrier of gel based contacts. In this paper we present the ability of dry electrodes in long term monitoring of ECG, EEG and fetal ECG.

OPTOELECTRONICS, FIBER OPTICS, AND OTHER ASPECTS OF QUANTUM ELECTRONICS: Effective matching of a microwave modulator to a laser diode in a selected band of gigahertz frequencies

NASA Astrophysics Data System (ADS)

Bliskavitskiĭ, A. A.; Vladimirov, Yu K.; Tambiev, Yu A.; Shelkov, N. V.

1989-08-01

Theoretical and experimental investigations were made of wide-band low-loss matching of an InGaAsP heterolaser to a microwave modulator in the gigahertz range. The results of panoramic measurements of the standing-wave ratio of the laser were used to estimate the components of the equivalent electrical circuit of the laser and to synthesize a passive microstrip matching circuit which increased by more than 10 dB the efficiency of modulation of the laser radiation intensity in a 2-3.4 GHz band of modulating frequencies.

Concentric transmon qubit featuring fast tunability and site-selective Z coupling

NASA Astrophysics Data System (ADS)

Weides, Martin; Braumueller, Jochen; Sandberg, Martin; Vissers, Michael; Schneider, Andre; Schloer, Steffen; Gruenhaupt, Lukas; Rotzinger, Hannes; Marthaler, Michael; Lukashenko, Alexander; Dieter, Amadeus; Ustinov, Alexey; Pappas, David

We present a planar qubit design based on a superconducting circuit that we call concentric transmon. While employing a simple fabrication process using Al evaporation and lift-off lithography, we observe qubit lifetimes and coherence times in the order of 10 μs. We systematically characterize loss channels such as incoherent dielectric loss, Purcell decay and radiative losses. The implementation of a gradiometric SQUID loop allows for a fast tuning of the qubit transition frequency and therefore for full tomographic control of the quantum circuit. The presented qubit design features a passive direct Z coupling between neighboring qubits, being a pending quest in the field of quantum simulation.

Electrical resistivity well-logging system with solid-state electronic circuitry

USGS Publications Warehouse

Scott, James Henry; Farstad, Arnold J.

1977-01-01

An improved 4-channel electrical resistivity well-logging system for use with a passive probe with electrodes arranged in the 'normal' configuration has been designed and fabricated by Westinghouse Electric Corporation to meet technical specifications developed by the U.S. Geological Survey. Salient features of the system include solid-state switching and current regulation in the transmitter circuit to produce a constant-current source square wave, and synchronous solid-state switching and sampling of the potential waveform in the receiver circuit to provide an analog dc voltage proportions to the measured resistivity. Technical specifications and design details are included in this report.

Test and Evaluation Plan for the Manual Domestic Passive Profiling System (MDPPS)

DTIC Science & Technology

1994-02-01

Aviation Security (FAA/ACS) personnel and Northwest Airlines Security personnel. These elements were evaluated and refined at a Subject-Matter Expert (SME) workshop using Federal Bureau of Investigation (FBI), Immigration and Naturalization Service (INS), Customs, airline security personnel, and FAA personnel. A worksheet and scoring procedures for using the profiling elements were developed so that domestic passengers could be profiled by airline or other personnel. A field test of the feasibility of the Manual Domestic Passive Profiling (MDPP) worksheet was conducted at

Dynamics of fluidic devices with applications to rotor pitch links

NASA Astrophysics Data System (ADS)

Scarborough, Lloyd H., III

Coupling a Fluidic Flexible Matrix Composite (F2MC) to an air-pressurized fluid port produces a fundamentally new class of tunable vibration isolator. This fluidlastic device provides significant vibration reduction at an isolation frequency that can be tuned over a broad frequency range. The material properties and geometry of the F2MC element, as well as the port inertance, determine the isolation frequency. A unique feature of this device is that the port inertance depends on pressure so the isolation frequency can be adjusted by changing the air pressure. For constant port inertance, the isolation frequency is largely independent of the isolated mass so the device is robust to changes in load. A nonlinear model is developed to predict isolator length and port inertance. The model is linearized and the frequency response calculated. Experiments agree with theory, demonstrating a tunable isolation range from 9 Hz to 36 Hz and transmitted force reductions of up to 60 dB at the isolation frequency. Replacing rigid pitch links on rotorcraft with coupled fluidic devices has the potential to reduce the aerodynamic blade loads transmitted through the pitch links to the swashplate. Analytical models of two fluidic devices coupled with three different fluidic circuits are derived. These passive fluidlastic systems are tuned, by varying the fluid inertances and capacitances of each fluidic circuit, to reduce the transmitted pitch-link loads. The different circuit designs result in transmitted pitch link loads reduction at up to three main rotor harmonics. The simulation results show loads reduction at the targeted out-of-phase and in-phase harmonics of up to 88% and 93%, respectively. Experimental validation of two of the fluidic circuits demonstrates loads reduction of up to 89% at the out-of-phase isolation frequencies and up to 81% at the in-phase isolation frequencies. Replacing rigid pitch links on rotorcraft with fluidic pitch links changes the blade torsional impedance. At low frequency, the pitch link must have high impedance to pass through the pilot's collective and cyclic commands to control the aircraft. At higher frequencies, however, the pitch-link impedance can be tuned to change the blade pitching response to higher harmonic loads. Active blade control to produce higher harmonic pitch motions has been shown to reduce hub loads and increase rotor efficiency. This work investigates whether fluidic pitch links can passively provide these benefits. An analytical model of a fluidic pitch link is derived and incorporated into a rotor aeroelastic simulation for a rotor similar to that of the UH-60. Eighty-one simulations with varied fluidic pitch link parameters demonstrate that their impedance can be tailored to reduce rotor power and all six hub forces and moments. While no impedance was found that simultaneously reduced all components, the results include cases with reductions in the lateral 4/rev hub force of up to 91% and 4/rev hub pitching moment of up to 67%, and main rotor power of up to 5%.

The surface characterization and passive behavior of Type 316L stainless steel in H2S-containing conditions

NASA Astrophysics Data System (ADS)

Wang, Zhu; Zhang, Lei; Tang, Xian; Zhang, Ziru; Lu, Minxu

2017-11-01

The protectiveness and characterization of passive films formed at various potentials in H2S-containing environments were studied using electrochemical measurements and surface analysis method. The corrosion resistance of 316L in H2S-containing environment decreases with the applied potential. The Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) results indicate that Ni participates in the film formation, which results in the corresponding enrichment in the passive film. The oxidization degree analysis indicates that metallic elements are present in the passive film. Sulfide ions are significantly favored in the passive film at higher potentials, which is responsible for the breakdown of passive film.

Cryogenic Pound Circuits for Cryogenic Sapphire Oscillators

NASA Technical Reports Server (NTRS)

Dick, G. John; Wang, Rabi

2006-01-01

Two modern cryogenic variants of the Pound circuit have been devised to increase the frequency stability of microwave oscillators that include cryogenic sapphire-filled cavity resonators. The original Pound circuit is a microwave frequency discriminator that provides feedback to stabilize a voltage-controlled microwave oscillator with respect to an associated cavity resonator. In the present cryogenic Pound circuits, the active microwave devices are implemented by use of state-of-the-art commercially available tunnel diodes that exhibit low flicker noise (required for high frequency stability) and function well at low temperatures and at frequencies up to several tens of gigahertz. While tunnel diodes are inherently operable as amplitude detectors and amplitude modulators, they cannot, by themselves, induce significant phase modulation. Therefore, each of the present cryogenic Pound circuits includes passive circuitry that transforms the AM into the required PM. Each circuit also contains an AM detector that is used to sample the microwave signal at the input terminal of the high-Q resonator for the purpose of verifying the desired AM null at this point. Finally, each circuit contains a Pound signal detector that puts out a signal, at the modulation frequency, having an amplitude proportional to the frequency error in the input signal. High frequency stability is obtained by processing this output signal into feedback to a voltage-controlled oscillator to continuously correct the frequency error in the input signal.

Biocompatible circuit-breaker chip for thermal management of biomedical microsystems

NASA Astrophysics Data System (ADS)

Luo, Yi; Dahmardeh, Masoud; Takahata, Kenichi

2015-05-01

This paper presents a thermoresponsive micro circuit breaker for biomedical applications specifically targeted at electronic intelligent implants. The circuit breaker is micromachined to have a shape-memory-alloy cantilever actuator as a normally closed temperature-sensitive switch to protect the device of interest from overheating, a critical safety feature for smart implants including those that are electrothermally driven with wireless micro heaters. The device is fabricated in a size of 1.5  ×  2.0  ×  0.46 mm3 using biocompatible materials and a chip-based titanium package, exhibiting a nominal cold-state resistance of 14 Ω. The breaker rapidly enters the full open condition when the chip temperature exceeds 63 °C, temporarily breaking the circuit of interest to lower its temperature until chip temperature drops to 51 °C, at which the breaker closes the circuit to allow current to flow through it again, physically limiting the maximum temperature of the circuit. This functionality is tested in combination with a wireless resonant heater powered by radio-frequency electromagnetic radiation, demonstrating self-regulation of heater temperature. The developed circuit-breaker chip operates in a fully passive manner that removes the need for active sensor and circuitry to achieve temperature regulation in a target device, contributing to the miniaturization of biomedical microsystems including electronic smart implants where thermal management is essential.

Identification coding schemes for modulated reflectance systems

DOEpatents

Coates, Don M [Santa Fe, NM; Briles, Scott D [Los Alamos, NM; Neagley, Daniel L [Albuquerque, NM; Platts, David [Santa Fe, NM; Clark, David D [Santa Fe, NM

2006-08-22

An identifying coding apparatus employing modulated reflectance technology involving a base station emitting a RF signal, with a tag, located remotely from the base station, and containing at least one antenna and predetermined other passive circuit components, receiving the RF signal and reflecting back to the base station a modulated signal indicative of characteristics related to the tag.

Passive Collision Avoidance System for UAS

DTIC Science & Technology

2008-09-01

feasibility of using SWAP efficient LWIR microbolometers as outlined in the Priest report circa 1998 as a solution to the collision avoidance problems for UASs...81 7.3 LWIR Multispectral Sensor ..........................................................................................84 7.4 LWIR ... LWIR image of the Ultralight. Muffler runs at approximately 1200 F. ......................32 Figure 36: 3D model of LVDS circuit board with L-3

Continuous-Integration Laser Energy Lidar Monitor

NASA Technical Reports Server (NTRS)

Karsh, Jeremy

2011-01-01

This circuit design implements an integrator intended to allow digitization of the energy output of a pulsed laser, or the energy of a received pulse of laser light. It integrates the output of a detector upon which the laser light is incident. The integration is performed constantly, either by means of an active integrator, or by passive components.

High-T(sub c) Superconductor-Normal-Superconductor Junctions with Polyimide-Passivated Ambient Temperature Edge Formation

NASA Technical Reports Server (NTRS)

Barner, J. B.; Kleinsasser, A. W.; Hunt, B. D.

1996-01-01

The ability to controllably fabricate High-Temperature Superconductor (HTS) S-Normal-S (SNS) Josephson Juntions (JJ's) enhances the possibilities fro many applications, including digital circuits, SQUID's, and mixers. A wide variety of approaches to fabricating SNS-like junctions has been tried and analyzed in terms of proximity effect behavior.

Micro- and Macroscale Ideas of Current among Upper-Division Electrical Engineering Students

ERIC Educational Resources Information Center

Adam, Gina C.; Harlow, Danielle B.; Lord, Susan M.; Kautz, Christian H.

2017-01-01

The concept of electric current is fundamental in the study of electrical engineering (EE). Students are often exposed to this concept in their daily lives and early in middle school education. Lower-division university courses are usually limited to the study of passive electronic devices and simple electric circuits. Semiconductor physics is an…

Nonreciprocal signal routing in an active quantum network

NASA Astrophysics Data System (ADS)

Metelmann, A.; Türeci, H. E.

2018-04-01

As superconductor quantum technologies are moving towards large-scale integrated circuits, a robust and flexible approach to routing photons at the quantum level becomes a critical problem. Active circuits, which contain parametrically driven elements selectively embedded in the circuit, offer a viable solution. Here, we present a general strategy for routing nonreciprocally quantum signals between two sites of a given lattice of oscillators, implementable with existing superconducting circuit components. Our approach makes use of a dual lattice of overdamped oscillators linking the nodes of the main lattice. Solutions for spatially selective driving of the lattice elements can be found, which optimally balance coherent and dissipative hopping of microwave photons to nonreciprocally route signals between two given nodes. In certain lattices these optimal solutions are obtained at the exceptional point of the dynamical matrix of the network. We also demonstrate that signal and noise transmission characteristics can be separately optimized.

Atypical transistor-based chaotic oscillators: Design, realization, and diversity

NASA Astrophysics Data System (ADS)

Minati, Ludovico; Frasca, Mattia; OświÈ©cimka, Paweł; Faes, Luca; DroŻdŻ, Stanisław

2017-07-01

In this paper, we show that novel autonomous chaotic oscillators based on one or two bipolar junction transistors and a limited number of passive components can be obtained via random search with suitable heuristics. Chaos is a pervasive occurrence in these circuits, particularly after manual adjustment of a variable resistor placed in series with the supply voltage source. Following this approach, 49 unique circuits generating chaotic signals when physically realized were designed, representing the largest collection of circuits of this kind to date. These circuits are atypical as they do not trivially map onto known topologies or variations thereof. They feature diverse spectra and predominantly anti-persistent monofractal dynamics. Notably, we recurrently found a circuit comprising one resistor, one transistor, two inductors, and one capacitor, which generates a range of attractors depending on the parameter values. We also found a circuit yielding an irregular quantized spike-train resembling some aspects of neural discharge and another one generating a double-scroll attractor, which represent the smallest known transistor-based embodiments of these behaviors. Through three representative examples, we additionally show that diffusive coupling of heterogeneous oscillators of this kind may give rise to complex entrainment, such as lag synchronization with directed information transfer and generalized synchronization. The replicability and reproducibility of the experimental findings are good.

Atypical transistor-based chaotic oscillators: Design, realization, and diversity.

PubMed

Minati, Ludovico; Frasca, Mattia; Oświȩcimka, Paweł; Faes, Luca; Drożdż, Stanisław

2017-07-01

In this paper, we show that novel autonomous chaotic oscillators based on one or two bipolar junction transistors and a limited number of passive components can be obtained via random search with suitable heuristics. Chaos is a pervasive occurrence in these circuits, particularly after manual adjustment of a variable resistor placed in series with the supply voltage source. Following this approach, 49 unique circuits generating chaotic signals when physically realized were designed, representing the largest collection of circuits of this kind to date. These circuits are atypical as they do not trivially map onto known topologies or variations thereof. They feature diverse spectra and predominantly anti-persistent monofractal dynamics. Notably, we recurrently found a circuit comprising one resistor, one transistor, two inductors, and one capacitor, which generates a range of attractors depending on the parameter values. We also found a circuit yielding an irregular quantized spike-train resembling some aspects of neural discharge and another one generating a double-scroll attractor, which represent the smallest known transistor-based embodiments of these behaviors. Through three representative examples, we additionally show that diffusive coupling of heterogeneous oscillators of this kind may give rise to complex entrainment, such as lag synchronization with directed information transfer and generalized synchronization. The replicability and reproducibility of the experimental findings are good.

Functional identification of spike-processing neural circuits.

PubMed

Lazar, Aurel A; Slutskiy, Yevgeniy B

2014-02-01

We introduce a novel approach for a complete functional identification of biophysical spike-processing neural circuits. The circuits considered accept multidimensional spike trains as their input and comprise a multitude of temporal receptive fields and conductance-based models of action potential generation. Each temporal receptive field describes the spatiotemporal contribution of all synapses between any two neurons and incorporates the (passive) processing carried out by the dendritic tree. The aggregate dendritic current produced by a multitude of temporal receptive fields is encoded into a sequence of action potentials by a spike generator modeled as a nonlinear dynamical system. Our approach builds on the observation that during any experiment, an entire neural circuit, including its receptive fields and biophysical spike generators, is projected onto the space of stimuli used to identify the circuit. Employing the reproducing kernel Hilbert space (RKHS) of trigonometric polynomials to describe input stimuli, we quantitatively describe the relationship between underlying circuit parameters and their projections. We also derive experimental conditions under which these projections converge to the true parameters. In doing so, we achieve the mathematical tractability needed to characterize the biophysical spike generator and identify the multitude of receptive fields. The algorithms obviate the need to repeat experiments in order to compute the neurons' rate of response, rendering our methodology of interest to both experimental and theoretical neuroscientists.

Chemically programmed ink-jet printed resistive WORM memory array and readout circuit

NASA Astrophysics Data System (ADS)

Andersson, H.; Manuilskiy, A.; Sidén, J.; Gao, J.; Hummelgård, M.; Kunninmel, G. V.; Nilsson, H.-E.

2014-09-01

In this paper an ink-jet printed write once read many (WORM) resistive memory fabricated on paper substrate is presented. The memory elements are programmed for different resistance states by printing triethylene glycol monoethyl ether on the substrate before the actual memory element is printed using silver nano particle ink. The resistance is thus able to be set to a broad range of values without changing the geometry of the elements. A memory card consisting of 16 elements is manufactured for which the elements are each programmed to one of four defined logic levels, providing a total of 4294 967 296 unique possible combinations. Using a readout circuit, originally developed for resistive sensors to avoid crosstalk between elements, a memory card reader is manufactured that is able to read the values of the memory card and transfer the data to a PC. Such printed memory cards can be used in various applications.

Passive Wearable Skin Patch Sensor Measures Limb Hemodynamics Based on Electromagnetic Resonance.

PubMed

Cluff, Kim; Becker, Ryan; Jayakumar, Balakumar; Han, Kiyun; Condon, Ernie; Dudley, Kenneth; Szatkowski, George; Pipinos, Iraklis I; Amick, Ryan Z; Patterson, Jeremy

2018-04-01

The objectives of this study were to design and develop an open-circuit electromagnetic resonant skin patch sensor, characterize the fluid volume and resonant frequency relationship, and investigate the sensor's ability to measure limb hemodynamics and pulse volume waveform features. The skin patch was designed from an open-circuit electromagnetic resonant sensor comprised of a single baseline trace of copper configured into a square planar spiral which had a self-resonating response when excited by an external radio frequency sweep. Using a human arm phantom with a realistic vascular network, the sensor's performance to measure limb hemodynamics was evaluated. The sensor was able to measure pulsatile blood flow which registered as shifts in the sensor's resonant frequencies. The time-varying waveform pattern of the resonant frequency displayed a systolic upstroke, a systolic peak, a dicrotic notch, and a diastolic down stroke. The resonant frequency waveform features and peak systolic time were validated against ultrasound pulse wave Doppler. A statistical correlation analysis revealed a strong correlation () between the resonant sensor peak systolic time and the pulse wave Doppler peak systolic time. The sensor was able to detect pulsatile flow, identify hemodynamic waveform features, and measure heart rate with 98% accuracy. The open-circuit resonant sensor design leverages the architecture of a thin planar spiral which is passive (does not require batteries), robust and lightweight (does not have electrical components or electrical connections), and may be able to wirelessly monitor cardiovascular health and limb hemodynamics.

Analog hardware for delta-backpropagation neural networks

NASA Technical Reports Server (NTRS)

Eberhardt, Silvio P. (Inventor)

1992-01-01

This is a fully parallel analog backpropagation learning processor which comprises a plurality of programmable resistive memory elements serving as synapse connections whose values can be weighted during learning with buffer amplifiers, summing circuits, and sample-and-hold circuits arranged in a plurality of neuron layers in accordance with delta-backpropagation algorithms modified so as to control weight changes due to circuit drift.

A Novel Field-Circuit FEM Modeling and Channel Gain Estimation for Galvanic Coupling Real IBC Measurements.

PubMed

Gao, Yue-Ming; Wu, Zhu-Mei; Pun, Sio-Hang; Mak, Peng-Un; Vai, Mang-I; Du, Min

2016-04-02

Existing research on human channel modeling of galvanic coupling intra-body communication (IBC) is primarily focused on the human body itself. Although galvanic coupling IBC is less disturbed by external influences during signal transmission, there are inevitable factors in real measurement scenarios such as the parasitic impedance of electrodes, impedance matching of the transceiver, etc. which might lead to deviations between the human model and the in vivo measurements. This paper proposes a field-circuit finite element method (FEM) model of galvanic coupling IBC in a real measurement environment to estimate the human channel gain. First an anisotropic concentric cylinder model of the electric field intra-body communication for human limbs was developed based on the galvanic method. Then the electric field model was combined with several impedance elements, which were equivalent in terms of parasitic impedance of the electrodes, input and output impedance of the transceiver, establishing a field-circuit FEM model. The results indicated that a circuit module equivalent to external factors can be added to the field-circuit model, which makes this model more complete, and the estimations based on the proposed field-circuit are in better agreement with the corresponding measurement results.

Priming a perspective in Spanish monolingual children: the use of syntactic alternatives.

PubMed

Gámez, Perla B; Shimpi, Priya M; Waterfall, Heidi R; Huttenlocher, Janellen

2009-03-01

We used a syntactic priming paradigm to show priming effects for active and passive forms in monolingual Spanish-speaking four- and five-year-olds. In a baseline experiment, we examined children's use of the fue-passive form and found it was virtually non-existent in their speech, although they produced important elements of the form. Children used a more frequent Spanish passive form, the subjectless/se-passive. In a priming experiment, we presented children with drawings described using either active or fue-passive sentences. Children then described novel drawings. Priming was induced for active and passive forms; however, children did not produce the fue-passive provided for them. Instead, children used the subjectless/se-passive and what we term the function-passive, which like the fue-passive, emphasize the patient of the action. We argue that children's use of different passive forms suggests they are sensitive to experimenter's input as it relates to scene interpretation and to syntax.

Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Guangtao; Ingenito, Andrea; Hameren, Nienke van

2016-01-18

Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low-pressure chemical vapor deposition and subsequently annealed. The impact of doping profile on the passivation quality of the polySi doped contacts is studied for both polarities. It was found that an excellent surface passivation could be obtained by confining as much as possible the implanted-and-activated dopants within the polySi layers. The doping profile in the polySimore » was controlled by modifying the polySi thickness, the energy and dose of ion-implantation, and the temperature and time of annealing. An implied open-circuit voltage of 721 mV for n-type and 692 mV for p-type passivating contacts was achieved. Besides the high passivating quality, the developed passivating contacts exhibit reasonable high conductivity (R{sub sh n-type} = 95 Ω/□ and R{sub sh p-type} = 120 Ω/□). An efficiency of 19.2% (V{sub oc} = 673 mV, J{sub sc} = 38.0 mA/cm{sup 2}, FF = 75.2%, and pseudo-FF = 83.2%) was achieved on a front-textured IBC solar cell with polySi passivating contacts as both back surface field and emitter. By improving the front-side passivation, a V{sub OC} of 696 mV was also measured.« less

Atomic defects in monolayer WSe2 tunneling FETs studied by systematic ab initio calculations

NASA Astrophysics Data System (ADS)

Wu, Jixuan; Fan, Zhiqiang; Chen, Jiezhi; Jiang, Xiangwei

2018-05-01

Atomic defects in monolayer WSe2 tunneling FETs (TFETs) are studied through systematic ab initio calculations aiming at performance predictions and enhancements. The effects of various defect positions and different passivation atoms are characterized in WSe2 TFETs by rigorous ab initio quantum transport simulations. It is suggested that the Se vacancy (VSe) defect located in the gate-controlled channel region tends to increase the OFF current (I off), whereas it can be well suppressed by oxygen passivation. It is demonstrated that chlorine (Cl) passivation at the source-side tunneling region can largely suppress I off, leading to an impressively improved on–off ratio (I on/I off) compared with that without any defect. However, it is also observed that randomly positioned atomic defects tend to induce significant fluctuation of the TFET output. Further discussions are made with focus on the performance-variability trade-off for robust circuit design.

Integrated resonant micro-optical gyroscope and method of fabrication

DOEpatents

Vawter, G Allen [Albuquerque, NM; Zubrzycki, Walter J [Sandia Park, NM; Guo, Junpeng [Albuquerque, NM; Sullivan, Charles T [Albuquerque, NM

2006-09-12

An integrated optic gyroscope is disclosed which is based on a photonic integrated circuit (PIC) having a bidirectional laser source, a pair of optical waveguide phase modulators and a pair of waveguide photodetectors. The PIC can be connected to a passive ring resonator formed either as a coil of optical fiber or as a coiled optical waveguide. The lasing output from each end of the bidirectional laser source is phase modulated and directed around the passive ring resonator in two counterpropagating directions, with a portion of the lasing output then being detected to determine a rotation rate for the integrated optical gyroscope. The coiled optical waveguide can be formed on a silicon, glass or quartz substrate with a silicon nitride core and a silica cladding, while the PIC includes a plurality of III V compound semiconductor layers including one or more quantum well layers which are disordered in the phase modulators and to form passive optical waveguides.

Evaluations of Silica Aerogel-Based Flexible Blanket as Passive Thermal Control Element for Spacecraft Applications

NASA Astrophysics Data System (ADS)

Hasan, Mohammed Adnan; Rashmi, S.; Esther, A. Carmel Mary; Bhavanisankar, Prudhivi Yashwantkumar; Sherikar, Baburao N.; Sridhara, N.; Dey, Arjun

2018-03-01

The feasibility of utilizing commercially available silica aerogel-based flexible composite blankets as passive thermal control element in applications such as extraterrestrial environments is investigated. Differential scanning calorimetry showed that aerogel blanket was thermally stable over - 150 to 126 °C. The outgassing behavior, e.g., total mass loss, collected volatile condensable materials, water vapor regained and recovered mass loss, was within acceptable range recommended for the space applications. ASTM tension and tear tests confirmed the material's mechanical integrity. The thermo-optical properties remained nearly unaltered in simulated space environmental tests such as relative humidity, thermal cycling and thermo-vacuum tests and confirmed the space worthiness of the aerogel. Aluminized Kapton stitched or anchored to the blanket could be used to control the optical transparency of the aerogel. These outcomes highlight the potential of commercial aerogel composite blankets as passive thermal control element in spacecraft. Structural and chemical characterization of the material was also done using scanning electron microscopy, Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy.

Nonreciprocal Signal Routing in an Active Quantum Network

NASA Astrophysics Data System (ADS)

Tureci, Hakan E.; Metelmann, Anja

As superconductor quantum technologies are moving towards large-scale integrated circuits, a robust and flexible approach to routing photons at the quantum level becomes a critical problem. Active circuits, which contain driven linear or non-linear elements judiciously embedded in the circuit offer a viable solution. We present a general strategy for routing non-reciprocally quantum signals between two sites of a given lattice of resonators, implementable with existing superconducting circuit components. Our approach makes use of a dual lattice of superconducting non-linear elements on the links connecting the nodes of the main lattice. Solutions for spatially selective driving of the link-elements can be found, which optimally balance coherent and dissipative hopping of microwave photons to non-reciprocally route signals between two given nodes. In certain lattices these optimal solutions are obtained at the exceptional point of the scattering matrix of the network. The presented strategy provides a design space that is governed by a dynamically tunable non-Hermitian generator that can be used to minimize the added quantum noise as well. This work was supported by the U.S. Army Research Office (ARO) under Grant No. W911NF-15-1-0299.

Versatile tunable current-mode universal biquadratic filter using MO-DVCCs and MOSFET-based electronic resistors.

PubMed

Chen, Hua-Pin

2014-01-01

This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs), two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design.

Versatile Tunable Current-Mode Universal Biquadratic Filter Using MO-DVCCs and MOSFET-Based Electronic Resistors

PubMed Central

2014-01-01

This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs), two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design. PMID:24982963

Cascaded all-optical operations in a hybrid integrated 80-Gb/s logic circuit.

PubMed

LeGrange, J D; Dinu, M; Sochor, T; Bollond, P; Kasper, A; Cabot, S; Johnson, G S; Kang, I; Grant, A; Kay, J; Jaques, J

2014-06-02

We demonstrate logic functionalities in a high-speed all-optical logic circuit based on differential Mach-Zehnder interferometers with semiconductor optical amplifiers as the nonlinear optical elements. The circuit, implemented by hybrid integration of the semiconductor optical amplifiers on a planar lightwave circuit platform fabricated in silica glass, can be flexibly configured to realize a variety of Boolean logic gates. We present both simulations and experimental demonstrations of cascaded all-optical operations for 80-Gb/s on-off keyed data.

Precision Tests of a Quantum Hall Effect Device DC Equivalent Circuit Using Double-Series and Triple-Series Connections

PubMed Central

Jeffery, A.; Elmquist, R. E.; Cage, M. E.

1995-01-01

Precision tests verify the dc equivalent circuit used by Ricketts and Kemeny to describe a quantum Hall effect device in terms of electrical circuit elements. The tests employ the use of cryogenic current comparators and the double-series and triple-series connection techniques of Delahaye. Verification of the dc equivalent circuit in double-series and triple-series connections is a necessary step in developing the ac quantum Hall effect as an intrinsic standard of resistance. PMID:29151768

49 CFR 236.576 - Roadway element.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Roadway element. 236.576 Section 236.576..., Train Control and Cab Signal Systems Inspection and Tests; Roadway § 236.576 Roadway element. Roadway elements, except track circuits, including those for test purposes, shall be gaged monthly for height and...

49 CFR 236.576 - Roadway element.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Roadway element. 236.576 Section 236.576..., Train Control and Cab Signal Systems Inspection and Tests; Roadway § 236.576 Roadway element. Roadway elements, except track circuits, including those for test purposes, shall be gaged monthly for height and...

49 CFR 236.576 - Roadway element.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Roadway element. 236.576 Section 236.576..., Train Control and Cab Signal Systems Inspection and Tests; Roadway § 236.576 Roadway element. Roadway elements, except track circuits, including those for test purposes, shall be gaged monthly for height and...

Simple electronics for inertial and Pan-type piezoelectric positioners used in scanning probe microscopes

NASA Astrophysics Data System (ADS)

Chen, LeuJen; Kim, Seong Heon; Lee, Alfred K. H.; de Lozanne, Alex

2012-01-01

We describe a new type of circuit designed for driving piezoelectric positioners that rely on the stick-slip phenomenon. The circuit can be used for inertial positioners that have only one piezoelectric element (or multiple elements that are moved simultaneously) or for designs using a sequential movement of independent piezoelectric elements. A relay switches the piezoelectric elements between a high voltage source and ground, thus creating a fast voltage step followed by a slow ramp produced by the exponential discharging of the piezoelectric elements through a series resistor. A timing cascade is generated by having each relay power the next relay in the sequence. This design is simple and inexpensive. While it was developed for scanning probe microscopes, it may be useful for any piezoelectric motor based on a fast jump followed by a slow relaxation.

Redundancy approaches in bubble domain memories

NASA Technical Reports Server (NTRS)

Almasi, G. S.; Schuster, S. E.

1972-01-01

Fabrication of integrated circuit chips to compensate for faulty memory elements is discussed. Procedure for testing chips to determine extent of redundancy and faults is described. Mathematical model to define operation is presented. Schematic circuit diagram of test equipment is provided.

Optimized planning of in-service inspections of local flow-accelerated corrosion of pipeline elements used in the secondary coolant circuit of the VVER-440-based units at the Novovoronezh NPP

NASA Astrophysics Data System (ADS)

Tomarov, G. V.; Povarov, V. P.; Shipkov, A. A.; Gromov, A. F.; Budanov, V. A.; Golubeva, T. N.

2015-03-01

Matters concerned with making efficient use of the information-analytical system on the flow-accelerated corrosion problem in setting up in-service examination of the metal of pipeline elements operating in the secondary coolant circuit of the VVER-440-based power units at the Novovoronezh NPP are considered. The principles used to select samples of pipeline elements in planning ultrasonic thickness measurements for timely revealing metal thinning due to flow-accelerated corrosion along with reducing the total amount of measurements in the condensate-feedwater path are discussed.

Development and evaluation of superconducting circuit elements

NASA Technical Reports Server (NTRS)

Haertling, Gene H.; Lee, Burtrand; Hsi, Dennis; Modi, Vibhakar; Marone, Matt

1990-01-01

An approach to the application of high Tc ceramic superconductors to practical circuit elements was developed and demonstrated. This method, known as the rigid-conductor process (RCP), involves the combination of a pre-formed, sintered, and tested superconductor material with an appropriate, rigid substrate via an epoxy adhesive which also serves to encapsulate the element from the ambient environment. Emphasis was on the practical means to achieve functional, reliable, and reproducible components. Although all of the work described in this report involved a YBa2Cu3Osub(7-x) high Tc superconductor material, the techniques developed and conclusions reached are equally applicable to other high Tc materials.

Combined Euler column vibration isolation and energy harvesting

NASA Astrophysics Data System (ADS)

Davis, R. B.; McDowell, M. D.

2017-05-01

A new device that combines vibration isolation and energy harvesting is modeled, simulated, and tested. The vibration isolating portion of the device uses post-buckled beams as its spring elements. Piezoelectric film is applied to the beams to harvest energy from their dynamic flexure. The entire device operates passively on applied base excitation and requires no external power or control system. The structural system is modeled using the elastica, and the structural response is applied as forcing on the electric circuit equation to predict the output voltage and the corresponding harvested power. The vibration isolation and energy harvesting performance is simulated across a large parameter space and the modeling approach is validated with experimental results. Experimental transmissibilities of 2% and harvested power levels of 0.36 μW are simultaneously demonstrated. Both theoretical and experimental data suggest that there is not necessarily a trade-off between vibration isolation and harvested power. That is, within the practical operational range of the device, improved vibration isolation will be accompanied by an increase in the harvested power as the forcing frequency is increased.

Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Bolin; Su, Zhijuan; Bennett, Steve

2014-05-07

Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simplemore » powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.« less

In vitro corrosion study by EIS of a nickel-free stainless steel for orthopaedic applications.

PubMed

Rondelli, G; Torricelli, P; Fini, M; Giardino, R

2005-03-01

The electrochemical impedance spectroscopy (EIS) technique was used for the study of the electrochemical behaviour of Ni-free austenitic stainless steel for orthopaedic applications. Experiments were carried out using four different test solutions: (i) phosphate-buffered saline (PBS), (ii) minimum essential medium (MEM), (iii) MEM + 10% fetal calf serum (FCS), (iv) MEM + 10% fetal calf serum + L929 fibroblast cell line (Cell). Bode-phase spectra showed the presence of two maxima and were fitted with an equivalent circuit characterized by two parallel combinations (Resistance, Constant Phase Element). The (R(1), CPE(1)) branch was assigned to the inner compact passive film and the (R(2), CPE(2)) branch to the external porous film. The resistance of the inner film R(1), here directly related to the material's uniform corrosion resistance, raised with the immersion time and increased in the following order: PBS

Electrical equivalent circuit for microstrip micro-plasma: control of EM propagation and numerical simulations.

PubMed

Mohamad, Almustafa; Tân-Hoa, Vuong; Jacques, David

2012-01-01

An approach to determine an equivalent electrical circuit of a micro planar discharge on a microstrip printed circuit is reported. The micro discharge is used to realize a dynamic microwave switching circuit. This approach is based on the measurement of the discharge current and the transmission coefficient for a given frequency 2.45 GHz. Numerical methods like FEM can be used to study the effect of plasma parameters on the propagation of electromagnetic waves through a microstrip printed circuit. Plasma behaves as flexible elements that can change its electrical proprieties such as conductivity.

Multichannel, Active Low-Pass Filters

NASA Technical Reports Server (NTRS)

Lev, James J.

1989-01-01

Multichannel integrated circuits cascaded to obtain matched characteristics. Gain and phase characteristics of channels of multichannel, multistage, active, low-pass filter matched by making filter of cascaded multichannel integrated-circuit operational amplifiers. Concept takes advantage of inherent equality of electrical characteristics of nominally-identical circuit elements made on same integrated-circuit chip. Characteristics of channels vary identically with changes in temperature. If additional matched channels needed, chips containing more than two operational amplifiers apiece (e.g., commercial quad operational amplifliers) used. Concept applicable to variety of equipment requiring matched gain and phase in multiple channels - radar, test instruments, communication circuits, and equipment for electronic countermeasures.

Foundry fabricated photonic integrated circuit optical phase lock loop.

PubMed

Bałakier, Katarzyna; Fice, Martyn J; Ponnampalam, Lalitha; Graham, Chris S; Wonfor, Adrian; Seeds, Alwyn J; Renaud, Cyril C

2017-07-24

This paper describes the first foundry-based InP photonic integrated circuit (PIC) designed to work within a heterodyne optical phase locked loop (OPLL). The PIC and an external electronic circuit were used to phase-lock a single-line semiconductor laser diode to an incoming reference laser, with tuneable frequency offset from 4 GHz to 12 GHz. The PIC contains 33 active and passive components monolithically integrated on a single chip, fully demonstrating the capability of a generic foundry PIC fabrication model. The electronic part of the OPLL consists of commercially available RF components. This semi-packaged system stabilizes the phase and frequency of the integrated laser so that an absolute frequency, high-purity heterodyne signal can be generated when the OPLL is in operation, with phase noise lower than -100 dBc/Hz at 10 kHz offset from the carrier. This is the lowest phase noise level ever demonstrated by monolithically integrated OPLLs.

Betavoltaic battery performance: Comparison of modeling and experiment.

PubMed

Svintsov, A A; Krasnov, A A; Polikarpov, M A; Polyakov, A Y; Yakimov, E B

2018-07-01

A verification of the Monte Carlo simulation software for the prediction of short circuit current value is carried out using the Ni-63 source with the activity of 2.7 mCi/cm 2 and converters based on Si p-i-n diodes and SiC and GaN Schottky diodes. A comparison of experimentally measured and calculated short circuit current values confirms the validity of the proposed modeling method, with the difference in the measured and calculated short circuit current values not exceeding 25% and the error in the predicted output power values being below 30%. Effects of the protective layer formed on the Ni-63 radioactive film and of the passivating film on the semiconductor converters on the energy deposited inside the converters are estimated. The maximum attainable betavoltaic cell parameters are estimated. Copyright © 2018 Elsevier Ltd. All rights reserved.

Integration of Thermal Energy Harvesting in Semi-Active Piezoelectric Shunt-Damping Systems

NASA Astrophysics Data System (ADS)

Lubieniecki, Michał; Uhl, Tadeusz

2015-01-01

The opportunities to energize a broad range of devices by use of energy available almost anywhere and in many forms are almost unlimited. A major advantage of energy harvesting is the manufacture of small autonomous electronic devices with no need for power supply and maintenance. Shunt damping circuits, although unfavorably affected by the size and mass of bulky coil inductors, started to base on synthetic inductors losing their passivity. In this paper we report a study of the feasibility of powering shunt damping circuits by use of thermal energy otherwise irrevocably lost from a bearing. The heat generated in the bearing is converted thermoelectrically into electric energy which is then used to power synthetic inductance circuitry. We show that the power demand of such circuit can be satisfied by use of a thermoelectric generator paired with a moderately loaded bearing.

Experiments and kinematics analysis of a hand rehabilitation exoskeleton with circuitous joints.

PubMed

Zhang, Fuhai; Fu, Yili; Zhang, Qinchao; Wang, Shuguo

2015-01-01

Aiming at the hand rehabilitation of stroke patients, a wearable hand exoskeleton with circuitous joint is proposed. The circuitous joint adopts the symmetric pinion and rack mechanism (SPRM) with the parallel mechanism. The exoskeleton finger is a serial mechanism composed of three closed-chain SPRM joints in series. The kinematic equations of the open chain of the finger and the closed chains of the SPRM joints were built to analyze the kinematics of the hand rehabilitation exoskeleton. The experimental setup of the hand rehabilitation exoskeleton was built and the continuous passive motion (CPM) rehabilitation experiment and the test of human-robot interaction force measurement were conducted. Experiment results show that the mechanical design of the hand rehabilitation robot is reasonable and that the kinematic analysis is correct, thus the exoskeleton can be used for the hand rehabilitation of stroke patients.

Josephson Parametric Reflection Amplifier with Integrated Directionality

NASA Astrophysics Data System (ADS)

Westig, M. P.; Klapwijk, T. M.

2018-06-01

A directional superconducting parametric amplifier in the GHz frequency range is designed and analyzed, suitable for low-power read-out of microwave kinetic inductance detectors employed in astrophysics and when combined with a nonreciprocal device at its input also for circuit quantum electrodynamics. It consists of a one-wavelength-long nondegenerate Josephson parametric reflection amplifier circuit. The device has two Josephson-junction oscillators, connected via a tailored impedance to an on-chip passive circuit which directs the in- to the output port. The amplifier provides a gain of 20 dB over a bandwidth of 220 MHz on the signal as well as on the idler portion of the amplified input and the total photon shot noise referred to the input corresponds to maximally approximately 1.3 photons per second per Hertz of bandwidth. We predict a factor of 4 increase in dynamic range compared to conventional Josephson parametric amplifiers.

Smaller-loss planar SPP transmission line than conventional microstrip in microwave frequencies.

PubMed

Zhang, Hao Chi; Zhang, Qian; Liu, Jun Feng; Tang, Wenxuan; Fan, Yifeng; Cui, Tie Jun

2016-03-17

Transmission line is a basic component in all passive devices, integrated circuits, and systems. Microstrip is the most popular transmission line in the microwave and millimeter-wave frequencies, and has been widely used in current electronic devices, circuits, and systems. One of the important issues to be solved in such applications is the relatively large transmission loss of microstrip. Here, we propose a method to reduce the loss of microwave transmission line based on the designable wavenumber of spoof surface plasmon polaritons (SPPs). Using this characteristic, we analyze and experimentally demonstrate the low-loss feature of the SPP transmission line through the perturbation method and S-parameter measurements, respectively. Both simulation and experimental results show that the SPP transmission line has much smaller transmission loss than traditional microstrip with the same size in the microwave frequencies. Hence, the spoof SPP transmission line may make a big step forward in the low-loss circuits and systems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bell, Nelson S.; Sarobol, Pylin; Cook, Adam

There is a rising interest in developing functional electronics using additively manufactured components. Considerations in materials selection and pathways to forming hybrid circuits and devices must demonstrate useful electronic function; must enable integration; and must complement the complex shape, low cost, high volume, and high functionality of structural but generally electronically passive additively manufactured components. This article reviews several emerging technologies being used in industry and research/development to provide integration advantages of fabricating multilayer hybrid circuits or devices. First, we review a maskless, noncontact, direct write (DW) technology that excels in the deposition of metallic colloid inks for electrical interconnects.more » Second, we review a complementary technology, aerosol deposition (AD), which excels in the deposition of metallic and ceramic powder as consolidated, thick conformal coatings and is additionally patternable through masking. As a result, we show examples of hybrid circuits/devices integrated beyond 2-D planes, using combinations of DW or AD processes and conventional, established processes.« less

Solution-based circuits enable rapid and multiplexed pathogen detection.

PubMed

Lam, Brian; Das, Jagotamoy; Holmes, Richard D; Live, Ludovic; Sage, Andrew; Sargent, Edward H; Kelley, Shana O

2013-01-01

Electronic readout of markers of disease provides compelling simplicity, sensitivity and specificity in the detection of small panels of biomarkers in clinical samples; however, the most important emerging tests for disease, such as infectious disease speciation and antibiotic-resistance profiling, will need to interrogate samples for many dozens of biomarkers. Electronic readout of large panels of markers has been hampered by the difficulty of addressing large arrays of electrode-based sensors on inexpensive platforms. Here we report a new concept--solution-based circuits formed on chip--that makes highly multiplexed electrochemical sensing feasible on passive chips. The solution-based circuits switch the information-carrying signal readout channels and eliminate all measurable crosstalk from adjacent, biomolecule-specific microsensors. We build chips that feature this advance and prove that they analyse unpurified samples successfully, and accurately classify pathogens at clinically relevant concentrations. We also show that signature molecules can be accurately read 2  minutes after sample introduction.

Silicon carbide passive heating elements in microwave-assisted organic synthesis.

PubMed

Kremsner, Jennifer M; Kappe, C Oliver

2006-06-09

Microwave-assisted organic synthesis in nonpolar solvents is investigated utilizing cylinders of sintered silicon carbide (SiC)--a chemically inert and strongly microwave absorbing material--as passive heating elements (PHEs). These heating inserts absorb microwave energy and subsequently transfer the generated thermal energy via conduction phenomena to the reaction mixture. The use of passive heating elements allows otherwise microwave transparent or poorly absorbing solvents such as hexane, carbon tetrachloride, tetrahydrofuran, dioxane, or toluene to be effectively heated to temperatures far above their boiling points (200-250 degrees C) under sealed vessel microwave conditions. This opens up the possibility to perform microwave synthesis in unpolar solvent environments as demonstrated successfully for several organic transformations, such as Claisen rearrangements, Diels-Alder reactions, Michael additions, N-alkylations, and Dimroth rearrangements. This noninvasive technique is a particularly valuable tool in cases where other options to increase the microwave absorbance of the reaction medium, such as the addition of ionic liquids as heating aids, are not feasible due to an incompatibility of the ionic liquid with a particular substrate. The SiC heating elements are thermally and chemically resistant to 1500 degrees C and compatible with any solvent or reagent.

A Balanced Diaphragm Type of Maximum Cylinder Pressure Indicator

NASA Technical Reports Server (NTRS)

Spanogle, J A; Collins, John H , Jr

1930-01-01

A balanced diaphragm type of maximum cylinder pressure indicator was designed to give results consistent with engine operating conditions. The apparatus consists of a pressure element, a source of controlled high pressure and a neon lamp circuit. The pressure element, which is very compact, permits location of the diaphragm within 1/8 inch of the combustion chamber walls without water cooling. The neon lamp circuit used for indicating contact between the diaphragm and support facilitates the use of the apparatus with multicylinder engines.

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

NASA Astrophysics Data System (ADS)

Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki

2014-12-01

The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.

Finite element modelling of non-linear magnetic circuits using Cosmic NASTRAN

NASA Technical Reports Server (NTRS)

Sheerer, T. J.

1986-01-01

The general purpose Finite Element Program COSMIC NASTRAN currently has the ability to model magnetic circuits with constant permeablilities. An approach was developed which, through small modifications to the program, allows modelling of non-linear magnetic devices including soft magnetic materials, permanent magnets and coils. Use of the NASTRAN code resulted in output which can be used for subsequent mechanical analysis using a variation of the same computer model. Test problems were found to produce theoretically verifiable results.

Contact-independent electrical conductance measurement

DOEpatents

Mentzel, Tamar S.; MacLean, Kenneth; Kastner, Marc A.; Ray, Nirat

2017-01-24

Electrical conductance measurement system including a one-dimensional semiconducting channel, with electrical conductance sensitive to electrostatic fluctuations, in a circuit for measuring channel electrical current. An electrically-conductive element is disposed at a location at which the element is capacitively coupled to the channel; a midpoint of the element aligned with about a midpoint of the channel, and connected to first and second electrically-conductive contact pads that are together in a circuit connected to apply a changing voltage across the element. The electrically-conductive contact pads are laterally spaced from the midpoint of the element by a distance of at least about three times a screening length of the element, given in SI units as (K.di-elect cons..sub.0/e.sup.2D(E.sub.F)).sup.1/2, where K is the static dielectric constant, .di-elect cons..sub.0 is the permittivity of free space, e is electron charge, and D(E.sub.F) is the density of states at the Fermi energy for the element.

Feed network and electromagnetic radiation source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ardavan, Arzhang; Singleton, John; Linehan, Kevin E.

An antenna may include a volume polarization current radiator and a feed network. The volume polarization current radiator, includes a dielectric solid (such as a dielectric strip), and a plurality of closely-spaced excitation elements (24), each excitation element (24) being configured to induce a volume polarization current distribution in the dielectric solid proximate to the excitation element when a voltage is applied to the excitation element. The feed network is coupled to the volume polarization current radiator. The feed network also includes a plurality of passive power divider elements (32) and a plurality of passive delay elements (d1-d6) coupling themore » first port (30) and the plurality of second ports (108, 109, 164), the plurality of power divider elements (32) and the plurality of phase delay elements (d1-d6) being configured such that a radio-frequency signal that is applied to the first port (30) experiences a progressive change of phase as it is coupled to the plurality of second ports (108, 109, 164) so as to cause the volume polarization current distribution to propagate along the dielectric solid.« less

Design and Analysis of Broad-Band Fixed-Tuned Submillimeter-Waveguide Multipliers using MMIC Style Circuit Topology

NASA Technical Reports Server (NTRS)

Bruston, J.; Kim, M.; Martin, S. C.; Mehdi, I.; Smith, R. P.; Siegel, P. H.

1996-01-01

The design and analysis of varactor diode doubler, quadrupler and cascaded doubler circuits for 320 and 640 GHz have been completed. A new approach has been employed to produce a tunerless waveguide mount with a very flexible, frequency scaleable, MMIC style multiplier circuit. The concept, design, predicted performance and measurements on some of the constituent mount elements are presented.

Cancellation Circuit for Transmit-Receive Isolation

DTIC Science & Technology

2010-09-01

non -ideal hardware, and the performance of the circuit is limited. One of the major problems is the leakage from the circulator. The leakage disrupts...cancellation circuit was investigated by a series of simulations using Agilent ADS (Agilent Advanced Design System), and hardware tests were conducted to...developed in the WDDPA application, allowing coherent processing of the data from all elements. There are limitations encountered due to non -ideal

Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide

NASA Astrophysics Data System (ADS)

Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji

2017-12-01

In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al2O3-QDSL) passivation. By exploiting the passivation layer of Al2O3, the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc) of 4.77 mA cm-2 is very close to the experimentally measured 4.75 mA cm-2, which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD’s geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.

Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide.

PubMed

Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji

2017-12-01

In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al 2 O 3 -QDSL) passivation. By exploiting the passivation layer of Al 2 O 3 , the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc ) of 4.77 mA cm -2 is very close to the experimentally measured 4.75 mA cm -2 , which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD's geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.

Monolithic crystalline cladding microstructures for efficient light guiding and beam manipulation in passive and active regimes

PubMed Central

Jia, Yuechen; Cheng, Chen; Vázquez de Aldana, Javier R.; Castillo, Gabriel R.; Rabes, Blanca del Rosal; Tan, Yang; Jaque, Daniel; Chen, Feng

2014-01-01

Miniature laser sources with on-demand beam features are desirable devices for a broad range of photonic applications. Lasing based on direct-pump of miniaturized waveguiding active structures offers a low-cost but intriguing solution for compact light-emitting devices. In this work, we demonstrate a novel family of three dimensional (3D) photonic microstructures monolithically integrated in a Nd:YAG laser crystal wafer. They are produced by the femtosecond laser writing, capable of simultaneous light waveguiding and beam manipulation. In these guiding systems, tailoring of laser modes by both passive/active beam splitting and ring-shaped transformation are achieved by an appropriate design of refractive index patterns. Integration of graphene thin-layer as saturable absorber in the 3D laser structures allows for efficient passive Q-switching of tailored laser radiations which may enable miniature waveguiding lasers for broader applications. Our results pave a way to construct complex integrated passive and active laser circuits in dielectric crystals by using femtosecond laser written monolithic photonic chips. PMID:25100561

Passive Resistor Temperature Compensation for a High-Temperature Piezoresistive Pressure Sensor.

PubMed

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Li, Wangwang; Zhang, Diya; Xiong, Jijun

2016-07-22

The main limitation of high-temperature piezoresistive pressure sensors is the variation of output voltage with operating temperature, which seriously reduces their measurement accuracy. This paper presents a passive resistor temperature compensation technique whose parameters are calculated using differential equations. Unlike traditional experiential arithmetic, the differential equations are independent of the parameter deviation among the piezoresistors of the microelectromechanical pressure sensor and the residual stress caused by the fabrication process or a mismatch in the thermal expansion coefficients. The differential equations are solved using calibration data from uncompensated high-temperature piezoresistive pressure sensors. Tests conducted on the calibrated equipment at various temperatures and pressures show that the passive resistor temperature compensation produces a remarkable effect. Additionally, a high-temperature signal-conditioning circuit is used to improve the output sensitivity of the sensor, which can be reduced by the temperature compensation. Compared to traditional experiential arithmetic, the proposed passive resistor temperature compensation technique exhibits less temperature drift and is expected to be highly applicable for pressure measurements in harsh environments with large temperature variations.

Passive Resistor Temperature Compensation for a High-Temperature Piezoresistive Pressure Sensor

PubMed Central

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Li, Wangwang; Zhang, Diya; Xiong, Jijun

2016-01-01

The main limitation of high-temperature piezoresistive pressure sensors is the variation of output voltage with operating temperature, which seriously reduces their measurement accuracy. This paper presents a passive resistor temperature compensation technique whose parameters are calculated using differential equations. Unlike traditional experiential arithmetic, the differential equations are independent of the parameter deviation among the piezoresistors of the microelectromechanical pressure sensor and the residual stress caused by the fabrication process or a mismatch in the thermal expansion coefficients. The differential equations are solved using calibration data from uncompensated high-temperature piezoresistive pressure sensors. Tests conducted on the calibrated equipment at various temperatures and pressures show that the passive resistor temperature compensation produces a remarkable effect. Additionally, a high-temperature signal-conditioning circuit is used to improve the output sensitivity of the sensor, which can be reduced by the temperature compensation. Compared to traditional experiential arithmetic, the proposed passive resistor temperature compensation technique exhibits less temperature drift and is expected to be highly applicable for pressure measurements in harsh environments with large temperature variations. PMID:27455271

Silicon surface passivation by polystyrenesulfonate thin films

NASA Astrophysics Data System (ADS)

Chen, Jianhui; Shen, Yanjiao; Guo, Jianxin; Chen, Bingbing; Fan, Jiandong; Li, Feng; Liu, Haixu; Xu, Ying; Mai, Yaohua

2017-02-01

The use of polystyrenesulfonate (PSS) thin films in a high-quality passivation scheme involving the suppression of minority carrier recombination at the silicon surface is presented. PSS has been used as a dispersant for aqueous poly-3,4-ethylenedioxythiophene. In this work, PSS is coated as a form of thin film on a Si surface. A millisecond level minority carrier lifetime on a high resistivity Si wafer is obtained. The film thickness, oxygen content, and relative humidity are found to be important factors affecting the passivation quality. While applied to low resistivity silicon wafers, which are widely used for photovoltaic cell fabrication, this scheme yields relatively shorter lifetime, for example, 2.40 ms on n-type and 2.05 ms on p-type wafers with a resistivity of 1-5 Ω.cm. However, these lifetimes are still high enough to obtain high implied open circuit voltages (Voc) of 708 mV and 697 mV for n-type and p-type wafers, respectively. The formation of oxides at the PSS/Si interface is suggested to be responsible for the passivation mechanism.

Aeroelastic flutter enhancement by exploiting the combined use of shape memory alloys and nonlinear piezoelectric circuits

NASA Astrophysics Data System (ADS)

Sousa, Vagner Candido de; Silva, Tarcísio Marinelli Pereira; De Marqui Junior, Carlos

2017-10-01

In this paper, the combined effects of semi-passive control using shunted piezoelectric material and passive pseudoelastic hysteresis of shape memory springs on the aerolastic behavior of a typical section is investigated. An aeroelastic model that accounts for the presence of both smart materials employed as mechanical energy dissipation devices is presented. The Brinson model is used to simulate the shape memory material. New expressions for the modeling of the synchronized switch damping on inductor technique (developed for enhanced piezoelectric damping) are presented, resulting in better agreement with experimental data. The individual effects of each nonlinear mechanism on the aeroelastic behavior of the typical section are first verified. Later, the combined effects of semi-passive piezoelectric control and passive shape memory alloy springs on the post-critical behavior of the system are discussed in details. The range of post-flutter airflow speeds with stable limit cycle oscillations is significantly increased due to the combined effects of both sources of energy dissipation, providing an effective and autonomous way to modify the behavior of aeroelastic systems using smart materials.

Strength of word-specific neural memory traces assessed electrophysiologically.

PubMed

Alexandrov, Alexander A; Boricheva, Daria O; Pulvermüller, Friedemann; Shtyrov, Yury

2011-01-01

Memory traces for words are frequently conceptualized neurobiologically as networks of neurons interconnected via reciprocal links developed through associative learning in the process of language acquisition. Neurophysiological reflection of activation of such memory traces has been reported using the mismatch negativity brain potential (MMN), which demonstrates an enhanced response to meaningful words over meaningless items. This enhancement is believed to be generated by the activation of strongly intraconnected long-term memory circuits for words that can be automatically triggered by spoken linguistic input and that are absent for unfamiliar phonological stimuli. This conceptual framework critically predicts different amounts of activation depending on the strength of the word's lexical representation in the brain. The frequent use of words should lead to more strongly connected representations, whereas less frequent items would be associated with more weakly linked circuits. A word with higher frequency of occurrence in the subject's language should therefore lead to a more pronounced lexical MMN response than its low-frequency counterpart. We tested this prediction by comparing the event-related potentials elicited by low- and high-frequency words in a passive oddball paradigm; physical stimulus contrasts were kept identical. We found that, consistent with our prediction, presenting the high-frequency stimulus led to a significantly more pronounced MMN response relative to the low-frequency one, a finding that is highly similar to previously reported MMN enhancement to words over meaningless pseudowords. Furthermore, activation elicited by the higher-frequency word peaked earlier relative to low-frequency one, suggesting more rapid access to frequently used lexical entries. These results lend further support to the above view on word memory traces as strongly connected assemblies of neurons. The speed and magnitude of their activation appears to be linked to the strength of internal connections in a memory circuit, which is in turn determined by the everyday use of language elements.

Microfabrication of low-loss lumped-element Josephson circuits for non-reciprocal and parametric devices

NASA Astrophysics Data System (ADS)

Cicak, Katarina; Lecocq, Florent; Ranzani, Leonardo; Peterson, Gabriel A.; Kotler, Shlomi; Teufel, John D.; Simmonds, Raymond W.; Aumentado, Jose

Recent developments in coupled mode theory have opened the doors to new nonreciprocal amplification techniques that can be directly leveraged to produce high quantum efficiency in current measurements in microwave quantum information. However, taking advantage of these techniques requires flexible multi-mode circuit designs comprised of low-loss materials that can be implemented using common fabrication techniques. In this talk we discuss the design and fabrication of a new class of multi-pole lumped-element superconducting parametric amplifiers based on Nb/Al-AlOx/Nb Josephson junctions on silicon or sapphire. To reduce intrinsic loss in these circuits we utilize PECVD amorphous silicon as a low-loss dielectric (tanδ 5 ×10-4), resulting in nearly quantum-limited directional amplification.

Control circuit maintains unity power factor of reactive load

NASA Technical Reports Server (NTRS)

Kramer, M.; Martinage, L. H.

1966-01-01

Circuit including feedback control elements automatically corrects the power factor of a reactive load. It maintains power supply efficiency where negative load reactance changes and varies by providing corrective error signals to the control windings of a power supply transformer.

Multi-channel detector readout method and integrated circuit

DOEpatents

Moses, William W.; Beuville, Eric; Pedrali-Noy, Marzio

2006-12-12

An integrated circuit which provides multi-channel detector readout from a detector array. The circuit receives multiple signals from the elements of a detector array and compares the sampled amplitudes of these signals against a noise-floor threshold and against one another. A digital signal is generated which corresponds to the location of the highest of these signal amplitudes which exceeds the noise floor threshold. The digital signal is received by a multiplexing circuit which outputs an analog signal corresponding the highest of the input signal amplitudes. In addition a digital control section provides for programmatic control of the multiplexer circuit, amplifier gain, amplifier reset, masking selection, and test circuit functionality on each input thereof.

Multi-channel detector readout method and integrated circuit

DOEpatents

Moses, William W.; Beuville, Eric; Pedrali-Noy, Marzio

2004-05-18

An integrated circuit which provides multi-channel detector readout from a detector array. The circuit receives multiple signals from the elements of a detector array and compares the sampled amplitudes of these signals against a noise-floor threshold and against one another. A digital signal is generated which corresponds to the location of the highest of these signal amplitudes which exceeds the noise floor threshold. The digital signal is received by a multiplexing circuit which outputs an analog signal corresponding the highest of the input signal amplitudes. In addition a digital control section provides for programmatic control of the multiplexer circuit, amplifier gain, amplifier reset, masking selection, and test circuit functionality on each input thereof.

Electric vehicles batteries thermal management systems employing phase change materials

NASA Astrophysics Data System (ADS)

Ianniciello, Lucia; Biwolé, Pascal Henry; Achard, Patrick

2018-02-01

Battery thermal management is necessary for electric vehicles (EVs), especially for Li-ion batteries, due to the heat dissipation effects on those batteries. Usually, air or coolant circuits are employed as thermal management systems in Li-ion batteries. However, those systems are expensive in terms of investment and operating costs. Phase change materials (PCMs) may represent an alternative which could be cheaper and easier to operate. In fact, PCMs can be used as passive or semi-passive systems, enabling the global system to sustain near-autonomous operations. This article presents the previous developments introducing PCMs for EVs battery cooling. Different systems are reviewed and solutions are proposed to enhance PCMs efficiency in those systems.

Advanced DC/DC Converters Towards Higher Volumetric Efficiencies For Space Applications

NASA Technical Reports Server (NTRS)

Shaw, Harry; Shue, Jack; Liu, David; Wang, Bright; Plante, Jeanette

2005-01-01

A new emphasis on planetary exploration by NASA drives the need for small, high power DC/DC converters which are functionally modular. NASA GSFC and other government space organizations are supporting technology development in the DC/DC converter area to both meet new needs and to promote more sources of supply. New technologies which enable miniaturization such as embedded passive technologies and thermal management using high thermal conductivity materials are features of the new designs. Construction of some simple DC/DC converter core circuits using embedded components was found to be successful for increasing volumetric efficiency to 37 W/inch. The embedded passives were also able to perform satisfactorily in this application in cryogenic temperatures.

Technical - Economic Research for Passive Buildings

NASA Astrophysics Data System (ADS)

Miniotaite, Ruta

2017-10-01

A newly constructed passive house must save 80 % of heat resources; otherwise it is not a passive house. The heating energy demand of a passive building is less than 15 kWh/m2 per year. However, a passive house is something more than just an energy-saving house. This concept involves sustainable, high-quality, valuable, healthy and durable construction. Features of a passive house: high insulation of envelope components, high-quality windows, good tightness of the building, regenerative ventilation system and elimination of thermal bridges. The Energy Performance of Buildings Directive (EPBD) 61 requires all new public buildings to become near-zero energy buildings by 2019 and will be extended to all new buildings by 2021. This concept involves sustainable, high-quality, valuable, healthy and durable construction. Foundation, walls and roofs are the most essential elements of a house. The type of foundation for a private house is selected considering many factors. The article examines technological and structural solutions for passive buildings foundation, walls and roofs. The technical-economic comparison of the main structures of a passive house revealed that it is cheaper to install an adequately designed concrete slab foundation than to build strip or pile foundation and the floor separately. Timber stud walls are the cheapest wall option for a passive house and 45-51% cheaper compared to other options. The comparison of roofs and ceilings showed that insulation of the ceiling is 25% more efficient than insulation of the roof. The comparison of the main envelope elements efficiency by multiple-criteria evaluation methods showed that it is economically feasible to install concrete slab on ground foundation, stud walls with sheet cladding and a pitched roof with insulated ceiling.

Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

NASA Astrophysics Data System (ADS)

Thi Thanh Nguyen, Huong; Balaji, Nagarajan; Park, Cheolmin; Triet, Nguyen Minh; Le, Anh Huy Tuan; Lee, Seunghwan; Jeon, Minhan; Oh, Donhyun; Dao, Vinh Ai; Yi, Junsin

2017-02-01

Excellent surface passivation and anti-reflection properties of double-stack layers is a prerequisite for high efficiency of n-type c-Si solar cells. The high positive fixed charge (Q f) density of N-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films plays a poor role in boron emitter passivation. The more the refractive index ( n ) of a-SiNx:H is decreased, the more the positive Q f of a-SiNx:H is increased. Hydrogenated amorphous silicon oxynitride (SiON) films possess the properties of amorphous silicon oxide (a-SiOx) and a-SiNx:H with variable n and less positive Q f compared with a-SiNx:H. In this study, we investigated the passivation and anti-reflection properties of Al2O3/SiON stacks. Initially, a SiON layer was deposited by plasma enhanced chemical vapor deposition with variable n and its chemical composition was analyzed by Fourier transform infrared spectroscopy. Then, the SiON layer was deposited as a capping layer on a 10 nm thick Al2O3 layer, and the electrical and optical properties were analyzed. The SiON capping layer with n = 1.47 and a thickness of 70 nm resulted in an interface trap density of 4.74 = 1010 cm-2 eV-1 and Q f of -2.59 = 1012 cm-2 with a substantial improvement in lifetime of 1.52 ms after industrial firing. The incorporation of an Al2O3/SiON stack on the front side of the n-type solar cells results in an energy conversion efficiency of 18.34% compared to the one with Al2O3/a-SiNx:H showing 17.55% efficiency. The short circuit current density and open circuit voltage increase by up to 0.83 mA cm-2 and 12 mV, respectively, compared to the Al2O3/a-SiNx:H stack on the front side of the n-type solar cells due to the good anti-reflection and front side surface passivation.

CMOS Image Sensors: Electronic Camera On A Chip

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

Wikistudents. Teaching Consumption through Production Hands on with Wikipedia

ERIC Educational Resources Information Center

Sassatelli, Roberta; Arfini, Elisa; Piro, Valeria; Zambelli, Laura

2016-01-01

This paper describes and reflects on a teaching experience developed as a complimentary workshops to MA class on history, theory and politics of consumption. We used Wikipedia as a tool to consider the circuit of knowledge production in the Web 2.0 era, where consumers are no longer passive audiences but producers and consumers at the same time.…

Humidification during high-frequency oscillation ventilation is affected by ventilator circuit and ventilatory setting.

PubMed

Chikata, Yusuke; Imanaka, Hideaki; Onishi, Yoshiaki; Ueta, Masahiko; Nishimura, Masaji

2009-08-01

High-frequency oscillation ventilation (HFOV) is an accepted ventilatory mode for acute respiratory failure in neonates. As conventional mechanical ventilation, inspiratory gas humidification is essential. However, humidification during HFOV has not been clarified. In this bench study, we evaluated humidification during HFOV in the open circumstance of ICU. Our hypothesis is that humidification during HFOV is affected by circuit design and ventilatory settings. We connected a ventilator with HFOV mode to a neonatal lung model that was placed in an infant incubator set at 37 degrees C. We set a heated humidifier (Fisher & Paykel) to obtain 37 degrees C at the chamber outlet and 40 degrees C at the distal temperature probe. We measured absolute humidity and temperature at the Y-piece using a rapid-response hygrometer. We evaluated two types of ventilator circuit: a circuit with inner heating wire and another with embedded heating element. In addition, we evaluated three lengths of the inspiratory limb, three stroke volumes, three frequencies, and three mean airway pressures. The circuit with embedded heating element provided significantly higher absolute humidity and temperature than one with inner heating wire. As an extended tube lacking a heating wire was shorter, absolute humidity and temperature became higher. In the circuit with inner heating wire, absolute humidity and temperature increased as stroke volume increased. Humidification during HFOV is affected by circuit design and ventilatory settings.

Producibility of Vertically Integrated Photodiode (VIP)tm scanning focal plane arrays

NASA Astrophysics Data System (ADS)

Turner, Arthur M.; Teherani, Towfik; Ehmke, John C.; Pettitt, Cindy; Conlon, Peggy; Beck, Jeffrey D.; McCormack, Kent; Colombo, Luigi; Lahutsky, Tom; Murphy, Terry; Williams, Robert L.

1994-07-01

Vertically integrated photodiode, VIPTM, technology is now being used to produce second generation infrared focal plane arrays with high yields and performance. The VIPTM process employs planar, ion implanted, n on p diodes in HgCdTe which is epoxy hybridized directly to the read out integrated circuits on 100 mm Si wafers. The process parameters that are critical for high performance and yield include: HgCdTe dislocation density and thickness, backside passivation, frontside passivation, and junction formation. Producibility of infrared focal plane arrays (IRFPAs) is also significantly enhanced by read out integrated circuits (ROICs) which have the ability to deselect defective pixels. Cold probe screening before lab dewar assembly reduces costs and improves cycle times. The 240 X 1 and 240 X 2 scanning array formats are used to demonstrate the effect of process optimization, deselect, and cold probe screening on yield and cycle time. The versatility of the VIPTM technology and its extension to large area arrays is demonstrated using 240/288 X 4 and 480 X 5 TDI formats. Finally, the high performance of VIPTM IRFPAs is demonstrated by comparing data from a 480 X 5 to the SADA-II specification.

Peptide Integrated Optics.

PubMed

Handelman, Amir; Lapshina, Nadezda; Apter, Boris; Rosenman, Gil

2018-02-01

Bio-nanophotonics is a wide field in which advanced optical materials, biomedicine, fundamental optics, and nanotechnology are combined and result in the development of biomedical optical chips. Silk fibers or synthetic bioabsorbable polymers are the main light-guiding components. In this work, an advanced concept of integrated bio-optics is proposed, which is based on bioinspired peptide optical materials exhibiting wide optical transparency, nonlinear and electrooptical properties, and effective passive and active waveguiding. Developed new technology combining bottom-up controlled deposition of peptide planar wafers of a large area and top-down focus ion beam lithography provides direct fabrication of peptide optical integrated circuits. Finding a deep modification of peptide optical properties by reconformation of biological secondary structure from native phase to β-sheet architecture is followed by the appearance of visible fluorescence and unexpected transition from a native passive optical waveguiding to an active one. Original biocompatibility, switchable regimes of waveguiding, and multifunctional nonlinear optical properties make these new peptide planar optical materials attractive for application in emerging technology of lab-on-biochips, combining biomedical photonic and electronic circuits toward medical diagnosis, light-activated therapy, and health monitoring. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A periodic piezoelectric smart structure with the integrated passive/active vibration-reduction performances

NASA Astrophysics Data System (ADS)

Wang, Yuxi; Niu, Shengkai; Hu, Yuantai

2017-06-01

The paper proposes a new piezoelectric smart structure with the integrated passive/active vibration-reduction performances, which is made of a series of periodic structural units. Every structural unit is made of two layers, one is an array of piezoelectric bimorphs (PBs) and one is an array of metal beams (MBs), both are connected as a whole by a metal plate. Analyses show that such a periodic smart structure possesses two aspects of vibration-reduction performance: one comes from its phonon crystal characteristics which can isolate those vibrations with the driving frequency inside the band gap(s). The other one comes from the electromechanical conversion of bent PBs, which is actively aimed at those vibrations with the driving frequency outside the band gap(s). By adjusting external inductance, the equivalent circuit of the proposed structure can be forced into parallel resonance such that most of the vibration energy is converted into electrical energy for dissipation by a resistance. Thus, an external circuit under the parallel resonance state is equivalent to a strong damping to the interrelated vibrating structure, which is just the action mechanism of the active vibration reduction performance of the proposed smart structure.

Passivation and alloying element retention in gas atomized powders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heidloff, Andrew J.; Rieken, Joel R.; Anderson, Iver E.

A method for gas atomization of a titanium alloy, nickel alloy, or other alumina (Al.sub.2O.sub.3)-forming alloy wherein the atomized particles are exposed as they solidify and cool in a very short time to multiple gaseous reactive agents for the in-situ formation of a passivation reaction film on the atomized particles wherein the reaction film retains a precursor halogen alloying element that is subsequently introduced into a microstructure formed by subsequent thermally processing of the atomized particles to improve oxidation resistance.

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 C

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Beheim, Glenn M.; Okojie, Robert S.; Chang, Carl W.; Meredith, Roger D.; Ferrier, Terry L.; Evans, Laura J.; Krasowski, Michael J.;

Monolithic microwave integrated circuit devices for active array antennas

NASA Technical Reports Server (NTRS)

Mittra, R.

1984-01-01

Two different aspects of active antenna array design were investigated. The transition between monolithic microwave integrated circuits and rectangular waveguides was studied along with crosstalk in multiconductor transmission lines. The boundary value problem associated with a discontinuity in a microstrip line is formulated. This entailed, as a first step, the derivation of the propagating as well as evanescent modes of a microstrip line. The solution is derived to a simple discontinuity problem: change in width of the center strip. As for the multiconductor transmission line problem. A computer algorithm was developed for computing the crosstalk noise from the signal to the sense lines. The computation is based on the assumption that these lines are terminated in passive loads.

Process Research of Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.

1984-01-01

An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

Position sensor for a fuel injection element in an internal combustion engine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fulkerson, D.E.; Geske, M.L.

1987-08-18

This patent describes an electronic circuit for dynamically sensing and processing signals representative of changes in a magnet field, the circuit comprising: means for sensing a change in a magnetic field external to the circuit and providing an output representative of the change; circuit means electronically coupled with the output of the sensing means for providing an output indicating the presence of the magnetic field change; and a nulling circuit coupled with the output of the sensing means and across the indicating circuit means for nulling the electronic circuit responsive to the sensing means output, to thereby avoid ambient magneticmore » fields temperature and process variations, and wherein the nulling circuit comprises a capacitor coupled to the output of the nulling circuit, means for charging and discharging the capacitor responsive to any imbalance in the input to the nulling circuit, and circuit means coupling the capacitor with the output of the sensing means for nulling any imbalance during the charging or discharging of the capacitor.« less

Band-Pass Amplifier Without Discrete Reactance Elements

NASA Technical Reports Server (NTRS)

Kleinberg, L.

1984-01-01

Inherent or "natural" device capacitance exploited. Band-Pass Circuit has input impedance of equivalent circuit at frequencies much greater than operational-amplifier rolloff frequency. Apparent inductance and capacitance arise from combined effects of feedback and reactive component of amplifier gain in frequency range.